Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor

KAUST Repository

Lan, Yann Wen

2016-09-05

The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2, results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.

Controlled synthesis of high-quality crystals of monolayer MoS2 for nanoelectronic device application

DEFF Research Database (Denmark)

Yang, Xiaonian; Li, Qiang; Hu, Guofeng

2016-01-01

. Monolayer MoS2 so far can be obtained by mechanical exfoliation or chemical vapor deposition (CVD). However, controllable synthesis of large area monolayer MoS2 with high quality needs to be improved and their growth mechanism requires more studies. Here we report a systematical study on controlled...... synthesis of high-quality monolayer MoS2 single crystals using low pressure CVD. Large-size monolayer MoS2 triangles with an edge length up to 405 mu m were successfully synthesized. The Raman and photoluminescence spectroscopy studies indicate high homogenous optical characteristic of the synthesized...... monolayer MoS2 triangles. The transmission electron microscopy results demonstrate that monolayer MoS2 triangles are single crystals. The back-gated field effect transistors (FETs) fabricated using the as-grown monolayer MoS2 show typical n-type semiconductor behaviors with carrier mobility up to 21.8 cm(2...

Enhancing Photoresponsivity of Self-Aligned MoS2 Field-Effect Transistors by Piezo-Phototronic Effect from GaN Nanowires.

Science.gov (United States)

Liu, Xingqiang; Yang, Xiaonian; Gao, Guoyun; Yang, Zhenyu; Liu, Haitao; Li, Qiang; Lou, Zheng; Shen, Guozhen; Liao, Lei; Pan, Caofeng; Lin Wang, Zhong

2016-08-23

We report high-performance self-aligned MoS2 field-effect transistors (FETs) with enhanced photoresponsivity by the piezo-phototronic effect. The FETs are fabricated based on monolayer MoS2 with a piezoelectric GaN nanowire (NW) as the local gate, and a self-aligned process is employed to define the source/drain electrodes. The fabrication method allows the preservation of the intrinsic property of MoS2 and suppresses the scattering center density in the MoS2/GaN interface, which results in high electrical and photoelectric performances. MoS2 FETs with channel lengths of ∼200 nm have been fabricated with a small subthreshold slope of 64 mV/dec. The photoresponsivity is 443.3 A·W(-1), with a fast response and recovery time of ∼5 ms under 550 nm light illumination. When strain is introduced into the GaN NW, the photoresponsivity is further enhanced to 734.5 A·W(-1) and maintains consistent response and recovery time, which is comparable with that of the mechanical exfoliation of MoS2 transistors. The approach presented here opens an avenue to high-performance top-gated piezo-enhanced MoS2 photodetectors.

Magnetoresistance in Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions.

Science.gov (United States)

Zhang, Han; Ye, Meng; Wang, Yangyang; Quhe, Ruge; Pan, Yuanyuan; Guo, Ying; Song, Zhigang; Yang, Jinbo; Guo, Wanlin; Lu, Jing

2016-06-28

Semiconducting single-layer (SL) and few-layer MoS2 have a flat surface, free of dangling bonds. Using density functional theory coupled with non-equilibrium Green's function method, we investigate the spin-polarized transport properties of Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions with MoS2 layer numbers of N = 1, 3, and 5. Well-defined interfaces are formed between MoS2 and metal electrodes. The junctions with a SL MoS2 spacer are almost metallic owing to the strong coupling between MoS2 and the ferromagnets, while those are tunneling with a few layer MoS2 spacer. Both large magnetoresistance and tunneling magnetoresistance are found when fcc or hcp Co is used as an electrode. Therefore, flat single- and few-layer MoS2 can serve as an effective nonmagnetic spacer in a magnetoresistance or tunneling magnetoresistance device with a well-defined interface.

Modification of the optoelectronic properties of two-dimensional MoS2 crystals by ultraviolet-ozone treatment

Science.gov (United States)

Yang, Hae In; Park, Seonyoung; Choi, Woong

2018-06-01

We report the modification of the optoelectronic properties of mechanically-exfoliated single layer MoS2 by ultraviolet-ozone exposure. Photoluminescence emission of pristine MoS2 monotonically decreased and eventually quenched as ultraviolet-ozone exposure time increased from 0 to 10 min. The reduction of photoluminescence emission accompanied reduction of Raman modes, suggesting structural degradation in ultraviolet-ozone exposed MoS2. Analysis with X-ray photoelectron spectroscopy revealed that the formation of Ssbnd O and Mosbnd O bonding increases with ultraviolet-ozone exposure time. Measurement of electrical transport properties of MoS2 in a bottom-gate thin-film transistor configuration suggested the presence of insulating MoO3 after ultraviolet-ozone exposure. These results demonstrate that ultraviolet-ozone exposure can significantly influence the optoelectronic properties of single layer MoS2, providing important implications on the application of MoS2 and other two-dimensional materials into optoelectronic devices.

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Science.gov (United States)

Li, Xuefei; Xiong, Xiong; Li, Tiaoyang; Li, Sichao; Zhang, Zhenfeng; Wu, Yanqing

2017-12-27

Because of their wide bandgap and ultrathin body properties, two-dimensional materials are currently being pursued for next-generation electronic and optoelectronic applications. Although there have been increasing numbers of studies on improving the performance of MoS 2 field-effect transistors (FETs) using various methods, the dielectric interface, which plays a decisive role in determining the mobility, interface traps, and thermal transport of MoS 2 FETs, has not been well explored and understood. In this article, we present a comprehensive experimental study on the effect of high-k dielectrics on the performance of few-layer MoS 2 FETs from 300 to 4.3 K. Results show that Al 2 O 3 /HfO 2 could boost the mobility and drain current. Meanwhile, MoS 2 transistors with Al 2 O 3 /HfO 2 demonstrate a 2× reduction in oxide trap density compared to that of the devices with the conventional SiO 2 substrate. Also, we observe a negative differential resistance effect on the device with 1 μm-channel length when using conventional SiO 2 as the gate dielectric due to self-heating, and this is effectively eliminated by using the Al 2 O 3 /HfO 2 gate dielectric. This dielectric engineering provides a highly viable route to realizing high-performance transition metal dichalcogenide-based FETs.

Large-area few-layer MoS 2 deposited by sputtering

KAUST Repository

Huang, Jyun-Hong

2016-06-06

Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm(2) and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 10(4). The relatively low mobility is attributed to the small grain size of 0.1-1 mu m with a trap charge density in grain boundaries of the order of 10(13) cm(-2).

Improving the Stability of High-Performance Multilayer MoS2 Field-Effect Transistors.

Science.gov (United States)

Liu, Na; Baek, Jongyeol; Kim, Seung Min; Hong, Seongin; Hong, Young Ki; Kim, Yang Soo; Kim, Hyun-Suk; Kim, Sunkook; Park, Jozeph

2017-12-13

In this study, we propose a method for improving the stability of multilayer MoS 2 field-effect transistors (FETs) by O 2 plasma treatment and Al 2 O 3 passivation while sustaining the high performance of bulk MoS 2 FET. The MoS 2 FETs were exposed to O 2 plasma for 30 s before Al 2 O 3 encapsulation to achieve a relatively small hysteresis and high electrical performance. A MoO x layer formed during the plasma treatment was found between MoS 2 and the top passivation layer. The MoO x interlayer prevents the generation of excess electron carriers in the channel, owing to Al 2 O 3 passivation, thereby minimizing the shift in the threshold voltage (V th ) and increase of the off-current leakage. However, prolonged exposure of the MoS 2 surface to O 2 plasma (90 and 120 s) was found to introduce excess oxygen into the MoO x interlayer, leading to more pronounced hysteresis and a high off-current. The stable MoS 2 FETs were also subjected to gate-bias stress tests under different conditions. The MoS 2 transistors exhibited negligible decline in performance under positive bias stress, positive bias illumination stress, and negative bias stress, but large negative shifts in V th were observed under negative bias illumination stress, which is attributed to the presence of sulfur vacancies. This simple approach can be applied to other transition metal dichalcogenide materials to understand their FET properties and reliability, and the resulting high-performance hysteresis-free MoS 2 transistors are expected to open up new opportunities for the development of sophisticated electronic applications.

Gate Tunable Transport in Graphene/MoS2/(Cr/Au Vertical Field-Effect Transistors

Directory of Open Access Journals (Sweden)

Ghazanfar Nazir

2017-12-01

Full Text Available Two-dimensional materials based vertical field-effect transistors have been widely studied due to their useful applications in industry. In the present study, we fabricate graphene/MoS2/(Cr/Au vertical transistor based on the mechanical exfoliation and dry transfer method. Since the bottom electrode was made of monolayer graphene (Gr, the electrical transport in our Gr/MoS2/(Cr/Au vertical transistors can be significantly modified by using back-gate voltage. Schottky barrier height at the interface between Gr and MoS2 can be modified by back-gate voltage and the current bias. Vertical resistance (Rvert of a Gr/MoS2/(Cr/Au transistor is compared with planar resistance (Rplanar of a conventional lateral MoS2 field-effect transistor. We have also studied electrical properties for various thicknesses of MoS2 channels in both vertical and lateral transistors. As the thickness of MoS2 increases, Rvert increases, but Rplanar decreases. The increase of Rvert in the thicker MoS2 film is attributed to the interlayer resistance in the vertical direction. However, Rplanar shows a lower value for a thicker MoS2 film because of an excess of charge carriers available in upper layers connected directly to source/drain contacts that limits the conduction through layers closed to source/drain electrodes. Hence, interlayer resistance associated with these layers contributes to planer resistance in contrast to vertical devices in which all layers contribute interlayer resistance.

2D MoS2 Neuromorphic Devices for Brain-Like Computational Systems.

Science.gov (United States)

Jiang, Jie; Guo, Junjie; Wan, Xiang; Yang, Yi; Xie, Haipeng; Niu, Dongmei; Yang, Junliang; He, Jun; Gao, Yongli; Wan, Qing

2017-08-01

Hardware implementation of artificial synapses/neurons with 2D solid-state devices is of great significance for nanoscale brain-like computational systems. Here, 2D MoS 2 synaptic/neuronal transistors are fabricated by using poly(vinyl alcohol) as the laterally coupled, proton-conducting electrolytes. Fundamental synaptic functions, such as an excitatory postsynaptic current, paired-pulse facilitation, and a dynamic filter for information transmission of biological synapse, are successfully emulated. Most importantly, with multiple input gates and one modulatory gate, spiking-dependent logic operation/modulation, multiplicative neural coding, and neuronal gain modulation are also experimentally demonstrated. The results indicate that the intriguing 2D MoS 2 transistors are also very promising for the next-generation of nanoscale neuromorphic device applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Room-temperature superparamagnetism due to giant magnetic anisotropy in Mo S defected single-layer MoS2

Science.gov (United States)

Khan, M. A.; Leuenberger, Michael N.

2018-04-01

Room-temperature superparamagnetism due to a large magnetic anisotropy energy (MAE) of a single atom magnet has always been a prerequisite for nanoscale magnetic devices. Realization of two dimensional (2D) materials such as single-layer (SL) MoS2, has provided new platforms for exploring magnetic effects, which is important for both fundamental research and for industrial applications. Here, we use density functional theory (DFT) to show that the antisite defect (Mo S ) in SL MoS2 is magnetic in nature with a magnetic moment μ of  ∼2 μB and, remarkably, exhibits an exceptionally large atomic scale MAE =\\varepsilon\\parallel-\\varepsilon\\perp of  ∼500 meV. Our calculations reveal that this giant anisotropy is the joint effect of strong crystal field and significant spin–orbit coupling (SOC). In addition, the magnetic moment μ can be tuned between 1 μB and 3 μB by varying the Fermi energy \\varepsilonF , which can be achieved either by changing the gate voltage or by chemical doping. We also show that MAE can be raised to  ∼1 eV with n-type doping of the MoS2:Mo S sample. Our systematic investigations deepen our understanding of spin-related phenomena in SL MoS2 and could provide a route to nanoscale spintronic devices.

Stacking stability of MoS2 bilayer: An ab initio study

International Nuclear Information System (INIS)

Tao Peng; Guo Huai-Hong; Yang Teng; Zhang Zhi-Dong

2014-01-01

The study of the stacking stability of bilayer MoS 2 is essential since a bilayer has exhibited advantages over single layer MoS 2 in many aspects for nanoelectronic applications. We explored the relative stability, optimal sliding path between different stacking orders of bilayer MoS 2 , and (especially) the effect of inter-layer stress, by combining first-principles density functional total energy calculations and the climbing-image nudge-elastic-band (CI-NEB) method. Among five typical stacking orders, which can be categorized into two kinds (I: AA, AB and II: AA', AB', A'B), we found that stacking orders with Mo and S superposing from both layers, such as AA' and AB, is more stable than the others. With smaller computational efforts than potential energy profile searching, we can study the effect of inter-layer stress on the stacking stability. Under isobaric condition, the sliding barrier increases by a few eV/(ucGPa) from AA' to AB', compared to 0.1 eV/(ucGPa) from AB to [AB]. Moreover, we found that interlayer compressive stress can help enhance the transport properties of AA'. This study can help understand why inter-layer stress by dielectric gating materials can be an effective means to improving MoS 2 on nanoelectronic applications. (condensed matter: structural, mechanical, and thermal properties)

Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment

Science.gov (United States)

Wang, Xiao; Zhang, Tian-Bao; Yang, Wen; Zhu, Hao; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

2017-01-01

The effective and high-quality integration of high-k dielectrics on two-dimensional (2D) crystals is essential to the device structure engineering and performance improvement of field-effect transistor (FET) based on the 2D semiconductors. We report a 2D MoS2 transistor with ultra-thin Al2O3 top-gate dielectric (6.1 nm) and extremely low leakage current. Remote forming gas plasma pretreatment was carried out prior to the atomic layer deposition, providing nucleation sites with the physically adsorbed ions on the MoS2 surface. The top gate MoS2 FET exhibited excellent electrical performance, including high on/off current ratio over 109, subthreshold swing of 85 mV/decade and field-effect mobility of 45.03 cm2/V s. Top gate leakage current less than 0.08 pA/μm2 at 4 MV/cm has been obtained, which is the smallest compared with the reported top-gated MoS2 transistors. Such an optimized integration of high-k dielectric in 2D semiconductor FET with enhanced performance is very attractive, and it paves the way towards the realization of more advanced 2D nanoelectronic devices and integrated circuits.

Faceted MoS2 nanotubes and nanoflowers

International Nuclear Information System (INIS)

Deepak, Francis Leonard; Mayoral, Alvaro; Yacaman, Miguel Jose

2009-01-01

A simple synthesis of novel faceted MoS 2 nanotubes (NTs) and nanoflowers (NFs) starting from molybdenum oxide and thiourea as the sulphur source is reported. The MoS 2 nanotubes with the faceted morphology have not been observed before. Further the as-synthesized MoS 2 nanotubes have high internal surface area. The nanostructures have been characterized by a variety of electron microscopy techniques. It is expected that these MoS 2 nanostrutures will find important applications in energy storage, catalysis and field emission.

Single-layer MoS2 electronics.

Science.gov (United States)

Lembke, Dominik; Bertolazzi, Simone; Kis, Andras

2015-01-20

CONSPECTUS: Atomic crystals of two-dimensional materials consisting of single sheets extracted from layered materials are gaining increasing attention. The most well-known material from this group is graphene, a single layer of graphite that can be extracted from the bulk material or grown on a suitable substrate. Its discovery has given rise to intense research effort culminating in the 2010 Nobel Prize in physics awarded to Andre Geim and Konstantin Novoselov. Graphene however represents only the proverbial tip of the iceberg, and increasing attention of researchers is now turning towards the veritable zoo of so-called "other 2D materials". They have properties complementary to graphene, which in its pristine form lacks a bandgap: MoS2, for example, is a semiconductor, while NbSe2 is a superconductor. They could hold the key to important practical applications and new scientific discoveries in the two-dimensional limit. This family of materials has been studied since the 1960s, but most of the research focused on their tribological applications: MoS2 is best known today as a high-performance dry lubricant for ultrahigh-vacuum applications and in car engines. The realization that single layers of MoS2 and related materials could also be used in functional electronic devices where they could offer advantages compared with silicon or graphene created a renewed interest in these materials. MoS2 is currently gaining the most attention because the material is easily available in the form of a mineral, molybdenite, but other 2D transition metal dichalcogenide (TMD) semiconductors are expected to have qualitatively similar properties. In this Account, we describe recent progress in the area of single-layer MoS2-based devices for electronic circuits. We will start with MoS2 transistors, which showed for the first time that devices based on MoS2 and related TMDs could have electrical properties on the same level as other, more established semiconducting materials. This

Evolution of electronic structure in highly charge doped MoS2 compounds

Science.gov (United States)

Bin Subhan, Mohammed; Watson, Matthew; Liu, Zhongkai; Walters, Andrew; Hoesch, Moritz; Howard, Chris; Diamond I05 beamline Collaboration

Transition-metal dichalcogenides (TMDCs) are a group of layered materials that exhibit a rich array of electronic ground states including semiconductivity, metallicity, superconductivity and charge density waves. In recent years, 2D TMDCs have attracted considerable attention due to their unique properties and potential applications in optoelectronics. It has been shown that the charge carrier density in few layer MoS2 can be tunably increased via electrostatic gating. At high levels of doping, MoS2 exhibits superconductivity with a dome-like dependence of Tc on doping analogous to that found in the cuprate superconductors. High doping can also be achieved via intercalation of alkali metals in bulk MoS2. The origin of this superconductivity is not yet fully understood with predictions ranging from exotic pairing mechanisms in bulk systems to Ising superconductivity in single layers. Despite these interesting properties, there has been limited research to date on the electronic structure of these doped compounds. Here we present our work on alkali metal intercalated MoS2 using the low temperature metal ammonia solution method. Using X-ray diffraction, Raman spectroscopy and ARPES measurements we will discuss the physical and electronic structure of these materials. EPSRC, Diamond Light Source.

Tuning on-off current ratio and field-effect mobility in a MoS(2)-graphene heterostructure via Schottky barrier modulation.

Science.gov (United States)

Shih, Chih-Jen; Wang, Qing Hua; Son, Youngwoo; Jin, Zhong; Blankschtein, Daniel; Strano, Michael S

2014-06-24

Field-effect transistor (FET) devices composed of a MoS2-graphene heterostructure can combine the advantages of high carrier mobility in graphene with the permanent band gap of MoS2 for digital applications. Herein, we investigate the electron transfer, photoluminescence, and gate-controlled carrier transport in such a heterostructure. We show that the junction is a Schottky barrier, whose height can be artificially controlled by gating or doping graphene. When the applied gate voltage (or the doping level) is zero, the photoexcited electron-hole pairs in monolayer MoS2 can be split by the heterojunction, significantly reducing the photoluminescence. By applying negative gate voltage (or p-doping) in graphene, the interlayer impedance formed between MoS2 and graphene exhibits an 100-fold increase. For the first time, we show that the gate-controlled interlayer Schottky impedance can be utilized to modulate carrier transport in graphene, significantly depleting the hole transport, but preserving the electron transport. Accordingly, we demonstrate a new type of FET device, which enables a controllable transition from NMOS digital to bipolar characteristics. In the NMOS digital regime, we report a very high room temperature on/off current ratio (ION/IOFF ∼ 36) in comparison to graphene-based FET devices without sacrificing the field-effect electron mobilities in graphene. By engineering the source/drain contact area, we further estimate that a higher value of ION/IOFF up to 100 can be obtained in the device architecture considered. The device architecture presented here may enable semiconducting behavior in graphene for digital and analogue electronics.

Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates

Directory of Open Access Journals (Sweden)

Tao Li

2015-05-01

Full Text Available The electrical performance of MoS2 can be engineered by introducing high-κ dielectrics, while the interactions between high-κ dielectrics and MoS2 need to be studied. In this study, multilayer MoS2 field-effect transistors (FETs with a back-gated configuration were fabricated on high-κ Al2O3 coated Si substrates. Compared with MoS2 FETs on SiO2, the field-effect mobility (μFE and subthreshold swing (SS were remarkably improved in MoS2/Al2O3/Si. The improved μFE was thought to result from the dielectric screening effect from high-κ Al2O3. When a HfO2 passivation layer was introduced on the top of MoS2/Al2O3/Si, the field-effect mobility was further enhanced, which was thought to be concerned with the decreased contact resistance between the metal and MoS2. Meanwhile, the interface trap density increased from 2.4×1012 eV−1cm−2 to 6.3×1012 eV−1cm−2. The increase of the off-state current and the negative shift of the threshold voltage may be related to the increase of interface traps.

Contact-Engineered Electrical Properties of MoS2 Field-Effect Transistors via Selectively Deposited Thiol-Molecules.

Science.gov (United States)

Cho, Kyungjune; Pak, Jinsu; Kim, Jae-Keun; Kang, Keehoon; Kim, Tae-Young; Shin, Jiwon; Choi, Barbara Yuri; Chung, Seungjun; Lee, Takhee

2018-05-01

Although 2D molybdenum disulfide (MoS 2 ) has gained much attention due to its unique electrical and optical properties, the limited electrical contact to 2D semiconductors still impedes the realization of high-performance 2D MoS 2 -based devices. In this regard, many studies have been conducted to improve the carrier-injection properties by inserting functional paths, such as graphene or hexagonal boron nitride, between the electrodes and 2D semiconductors. The reported strategies, however, require relatively time-consuming and low-yield transfer processes on sub-micrometer MoS 2 flakes. Here, a simple contact-engineering method is suggested, introducing chemically adsorbed thiol-molecules as thin tunneling barriers between the metal electrodes and MoS 2 channels. The selectively deposited thiol-molecules via the vapor-deposition process provide additional tunneling paths at the contact regions, improving the carrier-injection properties with lower activation energies in MoS 2 field-effect transistors. Additionally, by inserting thiol-molecules at the only one contact region, asymmetric carrier-injection is feasible depending on the temperature and gate bias. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Intercalation of Si between MoS2 layers

Directory of Open Access Journals (Sweden)

Rik van Bremen

2017-09-01

Full Text Available We report a combined experimental and theoretical study of the growth of sub-monolayer amounts of silicon (Si on molybdenum disulfide (MoS2. At room temperature and low deposition rates we have found compelling evidence that the deposited Si atoms intercalate between the MoS2 layers. Our evidence relies on several experimental observations: (1 Upon the deposition of Si on pristine MoS2 the morphology of the surface transforms from a smooth surface to a hill-and-valley surface. The lattice constant of the hill-and-valley structure amounts to 3.16 Å, which is exactly the lattice constant of pristine MoS2. (2 The transitions from hills to valleys are not abrupt, as one would expect for epitaxial islands growing on-top of a substrate, but very gradual. (3 I(V scanning tunneling spectroscopy spectra recorded at the hills and valleys reveal no noteworthy differences. (4 Spatial maps of dI/dz reveal that the surface exhibits a uniform work function and a lattice constant of 3.16 Å. (5 X-ray photo-electron spectroscopy measurements reveal that sputtering of the MoS2/Si substrate does not lead to a decrease, but an increase of the relative Si signal. Based on these experimental observations we have to conclude that deposited Si atoms do not reside on the MoS2 surface, but rather intercalate between the MoS2 layers. Our conclusion that Si intercalates upon the deposition on MoS2 is at variance with the interpretation by Chiappe et al. (Adv. Mater. 2014, 26, 2096–2101 that silicon forms a highly strained epitaxial layer on MoS2. Finally, density functional theory calculations indicate that silicene clusters encapsulated by MoS2 are stable.

Monolayer MoS2 heterojunction solar cells

KAUST Repository

Tsai, Menglin

2014-08-26

We realized photovoltaic operation in large-scale MoS2 monolayers by the formation of a type-II heterojunction with p-Si. The MoS 2 monolayer introduces a built-in electric field near the interface between MoS2 and p-Si to help photogenerated carrier separation. Such a heterojunction photovoltaic device achieves a power conversion efficiency of 5.23%, which is the highest efficiency among all monolayer transition-metal dichalcogenide-based solar cells. The demonstrated results of monolayer MoS 2/Si-based solar cells hold the promise for integration of 2D materials with commercially available Si-based electronics in highly efficient devices. © 2014 American Chemical Society.

Few-layer MoS2 as nitrogen protective barrier

Science.gov (United States)

Akbali, B.; Yanilmaz, A.; Tomak, A.; Tongay, S.; Çelebi, C.; Sahin, H.

2017-10-01

We report experimental and theoretical investigations of the observed barrier behavior of few-layer MoS2 against nitrogenation. Owing to its low-strength shearing, low friction coefficient, and high lubricity, MoS2 exhibits the demeanor of a natural N-resistant coating material. Raman spectroscopy is done to determine the coating capability of MoS2 on graphene. Surface morphology of our MoS2/graphene heterostructure is characterized by using optical microscopy, scanning electron microscopy, and atomic force microscopy. In addition, density functional theory-based calculations are performed to understand the energy barrier performance of MoS2 against nitrogenation. The penetration of nitrogen atoms through a defect-free MoS2 layer is prevented by a very high vertical diffusion barrier, indicating that MoS2 can serve as a protective layer for the nitrogenation of graphene. Our experimental and theoretical results show that MoS2 material can be used both as an efficient nanocoating material and as a nanoscale mask for selective nitrogenation of graphene layer.

Electron microscopy studies on MoS2 nanocrystals

DEFF Research Database (Denmark)

Hansen, Lars Pilsgaard

Industrial-style MoS2-based hydrotreating catalysts are studied using electron microscopy. The MoS2 nanostructures are imaged with single-atom sensitivity to reveal the catalytically important edge structures. Furthermore, the in-situ formation of MoS2 crystals is imaged for the first time....

Gold nanoparticles on MoS2 layered crystal flakes

International Nuclear Information System (INIS)

Cao, Wei; Pankratov, Vladimir; Huttula, Marko; Shi, Xinying; Saukko, Sami; Huang, Zhongjia; Zhang, Meng

2015-01-01

Inorganic layered crystal MoS 2 is considered as one of the most promising and efficient semiconductor materials for future transistors, photoelectronics, and electrocatalysis. To boost MoS 2 -based material applications, one direction is to grow physically and chemically reactive nanoparticles onto MoS 2 . Here we report on a simple route to synthesis crystalized MoS 2 –Au complexes. The gold nanoparticles were grown on MoS 2 flakes through a wet method in the oxygen free environment at room temperature. Nanoparticles with diameters varying from 9 nm to 429 nm were controlled by the molar ratios of MoS 2 and HAuCl 4 precursors. MoS 2 host flakes keep intrinsic honeycomb layered structures and the Au nanoparticles cubic-center crystal microstructures. From product chemical states analysis, the synthesis was found driven by redox reactions between the sulphide and the chloroauric acid. Photoluminescence measurement showed that introducing Au nanoparticles onto MoS 2 stacks substantially prompted excitonic transitions of stacks, as an analogy for doping Si wafers with dopants. Such composites may have potential applications in wide ranges similar as the doped Si. - Highlights: • The Au nanoparticles were decorated on MoS 2 in oxygen free ambiences via a wet method. • The Au nanoparticles are size-controllable and crystalized. • Chemical reaction scheme was clarified. • The MoS 2 –Au complexes have strong photoluminescent properties

Strong dopant dependence of electric transport in ion-gated MoS2

NARCIS (Netherlands)

Piatti, Erik; Chen, Qihong; Ye, Jianting

2017-01-01

We report modifications of the temperature-dependent transport properties of MoS2 thin flakes via field-driven ion intercalation in an electric double layer transistor. We find that intercalation with Li+ ions induces the onset of an inhomogeneous superconducting state. Intercalation with K+ leads

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes.

Science.gov (United States)

Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

2016-11-10

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS 2 ) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS 2 and pentacene. The pentacene/MoS 2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.

Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation.

Science.gov (United States)

Na, Junhong; Joo, Min-Kyu; Shin, Minju; Huh, Junghwan; Kim, Jae-Sung; Piao, Mingxing; Jin, Jun-Eon; Jang, Ho-Kyun; Choi, Hyung Jong; Shim, Joon Hyung; Kim, Gyu-Tae

2014-01-07

Diagnosing of the interface quality and the interactions between insulators and semiconductors is significant to achieve the high performance of nanodevices. Herein, low-frequency noise (LFN) in mechanically exfoliated multilayer molybdenum disulfide (MoS2) (~11.3 nm-thick) field-effect transistors with back-gate control was characterized with and without an Al2O3 high-k passivation layer. The carrier number fluctuation (CNF) model associated with trapping/detrapping the charge carriers at the interface nicely described the noise behavior in the strong accumulation regime both with and without the Al2O3 passivation layer. The interface trap density at the MoS2-SiO2 interface was extracted from the LFN analysis, and estimated to be Nit ~ 10(10) eV(-1) cm(-2) without and with the passivation layer. This suggested that the accumulation channel induced by the back-gate was not significantly influenced by the passivation layer. The Hooge mobility fluctuation (HMF) model implying the bulk conduction was found to describe the drain current fluctuations in the subthreshold regime, which is rarely observed in other nanodevices, attributed to those extremely thin channel sizes. In the case of the thick-MoS2 (~40 nm-thick) without the passivation, the HMF model was clearly observed all over the operation regime, ensuring the existence of the bulk conduction in multilayer MoS2. With the Al2O3 passivation layer, the change in the noise behavior was explained from the point of formation of the additional top channel in the MoS2 because of the fixed charges in the Al2O3. The interface trap density from the additional CNF model was Nit = 1.8 × 10(12) eV(-1) cm(-2) at the MoS2-Al2O3 interface.

Plasma-assisted synthesis of MoS2

Science.gov (United States)

Campbell, Philip M.; Perini, Christopher J.; Chiu, Johannes; Gupta, Atul; Ray, Hunter S.; Chen, Hang; Wenzel, Kevin; Snyder, Eric; Wagner, Brent K.; Ready, Jud; Vogel, Eric M.

2018-03-01

There has been significant interest in transition metal dichalcogenides (TMDs), including MoS2, in recent years due to their potential application in novel electronic and optical devices. While synthesis methods have been developed for large-area films of MoS2, many of these techniques require synthesis temperatures of 800 °C or higher. As a result of the thermal budget, direct synthesis requiring high temperatures is incompatible with many integrated circuit processes as well as flexible substrates. This work explores several methods of plasma-assisted synthesis of MoS2 as a way to lower the synthesis temperature. The first approach used is conversion of a naturally oxidized molybdenum thin film to MoS2 using H2S plasma. Conversion is demonstrated at temperatures as low as 400 °C, and the conversion is enabled by hydrogen radicals which reduce the oxidized molybdenum films. The second method is a vapor phase reaction incorporating thermally evaporated MoO3 exposed to a direct H2S plasma, similar to chemical vapor deposition (CVD) synthesis of MoS2. Synthesis at 400 °C results in formation of super-stoichiometric MoS2 in a beam-interrupted growth process. A final growth method relies on a cyclical process in which a small amount of Mo is sputtered onto the substrate and is subsequently sulfurized in a H2S plasma. Similar results could be realized using an atomic layer deposition (ALD) process to deposit the Mo film. Compared to high temperature synthesis methods, the lower temperature samples are lower quality, potentially due to poor crystallinity or higher defect density in the films. Temperature-dependent conductivity measurements are consistent with hopping conduction in the plasma-assisted synthetic MoS2, suggesting a high degree of disorder in the low-temperature films. Optimization of the plasma-assisted synthesis process for slower growth rate and better stoichiometry is expected to lead to high quality films at low growth temperature.

Tailored MoS2 nanorods: a simple microwave assisted synthesis

Science.gov (United States)

Reshmi, S.; Akshaya, M. V.; Satpati, Biswarup; Roy, Anupam; Basu, Palash Kumar; Bhattacharjee, K.

2017-11-01

We report here the synthesis of MoS2 nanostructures by a simple liquid phase exfoliation of MoS2 powder in organic solvents followed by microwave treatment. The probe sonication and the microwave treatment play an important role in rolling and curling of the MoS2 nanosheets to give rise to MoS2 spheres and rod/tube like-structures with diameter approximately 150-200 nm. The MoS2 nanorods formed in this fashion are hollow inside with a wall thickness of 15-20 nm and the length of the nanorods is found in the order of several micrometers. Synthesis of such tailored MoS2 nanorods by liquid phase exfoliation is not yet reported. Our observations suggest the 2H phase of bulk MoS2 remains preserved in the nanostructures with high crystalline quality.

Transfer matrix approach to electron transport in monolayer MoS2/MoO x heterostructures

Science.gov (United States)

Li, Gen

2018-05-01

Oxygen plasma treatment can introduce oxidation into monolayer MoS2 to transfer MoS2 into MoO x , causing the formation of MoS2/MoO x heterostructures. We find the MoS2/MoO x heterostructures have the similar geometry compared with GaAs/Ga1‑x Al x As semiconductor superlattice. Thus, We employ the established transfer matrix method to analyse the electron transport in the MoS2/MoO x heterostructures with double-well and step-well geometries. We also considere the coupling between transverse and longitudinal kinetic energy because the electron effective mass changes spatially in the MoS2/MoO x heterostructures. We find the resonant peaks show red shift with the increasing of transverse momentum, which is similar to the previous work studying the transverse-momentum-dependent transmission in GaAs/Ga1‑x Al x As double-barrier structure. We find electric field can enhance the magnitude of peaks and intensify the coupling between longitudinal and transverse momentums. Moreover, higher bias is applied to optimize resonant tunnelling condition to show negative differential effect can be observed in the MoS2/MoO x system.

Oxidation of atomically thin MoS2 on SiO2

Science.gov (United States)

Yamamoto, Mahito; Cullen, William; Einstein, Theodore; Fuhrer, Michael

2013-03-01

Surface oxidation of MoS2 markedly affects its electronic, optical, and tribological properties. However, oxidative reactivity of atomically thin MoS2 has yet to be addressed. Here, we investigate oxidation of atomic layers of MoS2 using atomic force microscopy and Raman spectroscopy. MoS2 is mechanically exfoliated onto SiO2 and oxidized in Ar/O2 or Ar/O3 (ozone) at 100-450 °C. MoS2 is much more reactive to O2 than an analogous atomic membrane of graphene and monolayer MoS2 is completely etched very rapidly upon O2 treatment above 300 °C. Thicker MoS2 (> 15 nm) transforms into MoO3 after oxidation at 400 °C, which is confirmed by a Raman peak at 820 cm-1. However, few-layer MoS2 oxidized below 400 °C exhibits no MoO3 Raman mode but etch pits are formed, similar to graphene. We find atomic layers of MoS2 shows larger reactivity to O3 than to O2 and monolayer MoS2 transforms chemically upon O3 treatment even below 100 °C. Work supported by the U. of Maryland NSF-MRSEC under Grant No. DMR 05-20741.

Two-dimensional MoS2 electromechanical actuators

Science.gov (United States)

Hung, Nguyen T.; Nugraha, Ahmad R. T.; Saito, Riichiro

2018-02-01

We investigate the electromechanical properties of two-dimensional MoS2 monolayers with 1H, 1T, and 1T‧ structures as a function of charge doping by using density functional theory. We find isotropic elastic moduli in the 1H and 1T structures, while the 1T‧ structure exhibits an anisotropic elastic modulus. Moreover, the 1T structure is shown to have a negative Poisson’s ratio, while Poisson’s ratios of the 1H and 1T‧ are positive. By charge doping, the monolayer MoS2 shows a reversible strain and work density per cycle ranging from  -0.68% to 2.67% and from 4.4 to 36.9 MJ m-3, respectively, making them suitable for applications in electromechanical actuators. We also examine the stress generated in the MoS2 monolayers and we find that 1T and 1T‧ MoS2 monolayers have relatively better performance than 1H MoS2 monolayer. We argue that such excellent electromechanical performance originate from the electrical conductivity of the metallic 1T and semimetallic 1T‧ structures and also from their high Young’s modulus of about 150-200 GPa.

Highly Enhanced Gas Adsorption Properties in Vertically Aligned MoS2 Layers.

Science.gov (United States)

Cho, Soo-Yeon; Kim, Seon Joon; Lee, Youhan; Kim, Jong-Seon; Jung, Woo-Bin; Yoo, Hae-Wook; Kim, Jihan; Jung, Hee-Tae

2015-09-22

In this work, we demonstrate that gas adsorption is significantly higher in edge sites of vertically aligned MoS2 compared to that of the conventional basal plane exposed MoS2 films. To compare the effect of the alignment of MoS2 on the gas adsorption properties, we synthesized three distinct MoS2 films with different alignment directions ((1) horizontally aligned MoS2 (basal plane exposed), (2) mixture of horizontally aligned MoS2 and vertically aligned layers (basal and edge exposed), and (3) vertically aligned MoS2 (edge exposed)) by using rapid sulfurization method of CVD process. Vertically aligned MoS2 film shows about 5-fold enhanced sensitivity to NO2 gas molecules compared to horizontally aligned MoS2 film. Vertically aligned MoS2 has superior resistance variation compared to horizontally aligned MoS2 even with same surface area exposed to identical concentration of gas molecules. We found that electrical response to target gas molecules correlates directly with the density of the exposed edge sites of MoS2 due to high adsorption of gas molecules onto edge sites of vertically aligned MoS2. Density functional theory (DFT) calculations corroborate the experimental results as stronger NO2 binding energies are computed for multiple configurations near the edge sites of MoS2, which verifies that electrical response to target gas molecules (NO2) correlates directly with the density of the exposed edge sites of MoS2 due to high adsorption of gas molecules onto edge sites of vertically aligned MoS2. We believe that this observation extends to other 2D TMD materials as well as MoS2 and can be applied to significantly enhance the gas sensor performance in these materials.

Synthesis of Epitaxial Single-Layer MoS2 on Au(111).

Science.gov (United States)

Grønborg, Signe S; Ulstrup, Søren; Bianchi, Marco; Dendzik, Maciej; Sanders, Charlotte E; Lauritsen, Jeppe V; Hofmann, Philip; Miwa, Jill A

2015-09-08

We present a method for synthesizing large area epitaxial single-layer MoS2 on the Au(111) surface in ultrahigh vacuum. Using scanning tunneling microscopy and low energy electron diffraction, the evolution of the growth is followed from nanoscale single-layer MoS2 islands to a continuous MoS2 layer. An exceptionally good control over the MoS2 coverage is maintained using an approach based on cycles of Mo evaporation and sulfurization to first nucleate the MoS2 nanoislands and then gradually increase their size. During this growth process the native herringbone reconstruction of Au(111) is lifted as shown by low energy electron diffraction measurements. Within the MoS2 islands, we identify domains rotated by 60° that lead to atomically sharp line defects at domain boundaries. As the MoS2 coverage approaches the limit of a complete single layer, the formation of bilayer MoS2 islands is initiated. Angle-resolved photoemission spectroscopy measurements of both single and bilayer MoS2 samples show a dramatic change in their band structure around the center of the Brillouin zone. Brief exposure to air after removing the MoS2 layer from vacuum is not found to affect its quality.

Adsorption of DNA/RNA nucleobases onto single-layer MoS2 and Li-Doped MoS2: A dispersion-corrected DFT study

Science.gov (United States)

Sadeghi, Meisam; Jahanshahi, Mohsen; Ghorbanzadeh, Morteza; Najafpour, Ghasem

2018-03-01

The kind of sensing platform in nano biosensor plays an important role in nucleic acid sequence detection. It has been demonstrated that graphene does not have an intrinsic band gap; therefore, transition metal dichalcogenides (TMDs) are desirable materials for electronic base detection. In the present work, a comparative study of the adsorption of the DNA/RNA nucleobases [Adenine (A), Cytosine (C) Guanine (G), Thymine (T) and Uracil (U)] onto the single-layer molybdenum disulfide (MoS2) and Li-doped MoS2 (Li-MoS2) as a sensing surfaces was investigated by using Dispersion-corrected Density Functional Theory (D-DFT) calculations and different measure of equilibrium distances, charge transfers and binding energies for the various nucleobases were calculated. The results revealed that the interactions between the nucleobases and the MoS2 can be strongly enhanced by introducing metal atom, due to significant charge transfer from the Li atom to the MoS2 when Lithium is placed on top of the MoS2. Furthermore, the binding energies of the five nucleobases were in the range of -0.734 to -0.816 eV for MoS2 and -1.47 to -1.80 eV for the Li-MoS2. Also, nucleobases were adsorbed onto MoS2 sheets via the van der Waals (vdW) force. This high affinity and the renewable properties of the biosensing platform demonstrated that Li-MoS2 nanosheet is biocompatible and suitable for nucleic acid analysis.

Impact of Reduced Graphene Oxide on MoS2 Grown by Sulfurization of Sputtered MoO3 and Mo Precursor Films (Postprint)

Science.gov (United States)

2016-05-26

1,2 intercalation assisted exfoliation,8–11 physical vapor deposition (PVD),12,13 and a wet chemistry approach involving thermal decomposition of a... annealed MoO3, MoS2 films S1 (MoS2 using Mo precursor), S2 (MoS2 using MoO3 precursor), S1r (MoS2 using Mo pre- cursor and rGO), and S2r (MoS2 using...MoO3 precursor and rGO). The annealed MoO3 (a) shows Mo(IV) peaks which are indicative of MoO2, and Mo(VI) peaks that occur when MoO3 is present. Both

First-principles analysis of MoS2/Ti2C and MoS2/Ti2CY2 (Y=F and OH) all-2D semiconductor/metal contacts

KAUST Repository

Gan, Liyong

2013-06-13

First-principles calculations are used to explore the geometry, bonding, and electronic properties of MoS2/Ti2C and MoS2/Ti2CY2 (Y = F and OH) semiconductor/metal contacts. The structure of the interfaces is determined. Strong chemical bonds formed at the MoS2/Ti2C interface result in additional states next to the Fermi level, which extend over the three atomic layers of MoS2 and induce a metallic character. The interaction in MoS2/Ti2CY2, on the other hand, is weak and not sensitive to the specific geometry, and the semiconducting nature thus is preserved. The energy level alignment implies weak and strong n-type doping of MoS2 in MoS2/Ti2CF2 and MoS2/Ti2C(OH)2, respectively. The corresponding n-type Schottky barrier heights are 0.85 and 0.26 eV. We show that the MoS2/Ti2CF2 interface is close to the Schottky limit. At the MoS2/Ti2C(OH)2 interface, we find that a strong dipole due to charge rearrangement induces the Schottky barrier. The present interfaces are well suited for application in all-two-dimensional devices.

First-principles analysis of MoS2/Ti2C and MoS2/Ti2CY2 (Y=F and OH) all-2D semiconductor/metal contacts

KAUST Repository

Gan, Liyong; Huang, Dan; Schwingenschlö gl, Udo; Zhao, Yu-Jun

2013-01-01

First-principles calculations are used to explore the geometry, bonding, and electronic properties of MoS2/Ti2C and MoS2/Ti2CY2 (Y = F and OH) semiconductor/metal contacts. The structure of the interfaces is determined. Strong chemical bonds formed at the MoS2/Ti2C interface result in additional states next to the Fermi level, which extend over the three atomic layers of MoS2 and induce a metallic character. The interaction in MoS2/Ti2CY2, on the other hand, is weak and not sensitive to the specific geometry, and the semiconducting nature thus is preserved. The energy level alignment implies weak and strong n-type doping of MoS2 in MoS2/Ti2CF2 and MoS2/Ti2C(OH)2, respectively. The corresponding n-type Schottky barrier heights are 0.85 and 0.26 eV. We show that the MoS2/Ti2CF2 interface is close to the Schottky limit. At the MoS2/Ti2C(OH)2 interface, we find that a strong dipole due to charge rearrangement induces the Schottky barrier. The present interfaces are well suited for application in all-two-dimensional devices.

Scalable Patterning of MoS2 Nanoribbons by Micromolding in Capillaries.

Science.gov (United States)

Hung, Yu-Han; Lu, Ang-Yu; Chang, Yung-Huang; Huang, Jing-Kai; Chang, Jeng-Kuei; Li, Lain-Jong; Su, Ching-Yuan

2016-08-17

In this study, we report a facile approach to prepare dense arrays of MoS2 nanoribbons by combining procedures of micromolding in capillaries (MIMIC) and thermolysis of thiosalts ((NH4)2MoS4) as the printing ink. The obtained MoS2 nanoribbons had a thickness reaching as low as 3.9 nm, a width ranging from 157 to 465 nm, and a length up to 2 cm. MoS2 nanoribbons with an extremely high aspect ratio (length/width) of ∼7.4 × 10(8) were achieved. The MoS2 pattern can be printed on versatile substrates, such as SiO2/Si, sapphire, Au film, FTO/glass, and graphene-coated glass. The degree of crystallinity of the as-prepared MoS2 was discovered to be adjustable by varying the temperature through postannealing. The high-temperature thermolysis (1000 °C) results in high-quality conductive samples, and field-effect transistors based on the patterned MoS2 nanoribbons were demonstrated and characterized, where the carrier mobility was comparable to that of thin-film MoS2. In contrast, the low-temperature-treated samples (170 °C) result in a unique nanocrystalline MoSx structure (x ≈ 2.5), where the abundant and exposed edge sites were obtained from highly dense arrays of nanoribbon structures by this MIMIC patterning method. The patterned MoSx was revealed to have superior electrocatalytic efficiency (an overpotential of ∼211 mV at 10 mA/cm(2) and a Tafel slope of 43 mV/dec) in the hydrogen evolution reaction (HER) when compared to the thin-film MoS2. The report introduces a new concept for rapidly fabricating cost-effective and high-density MoS2/MoSx nanostructures on versatile substrates, which may pave the way for potential applications in nanoelectronics/optoelectronics and frontier energy materials.

Hydrothermal synthesis of flower-like MoS2 nanospheres for electrochemical supercapacitors.

Science.gov (United States)

Zhou, Xiaoping; Xu, Bin; Lin, Zhengfeng; Shu, Dong; Ma, Lin

2014-09-01

Flower-like MoS2 nanospheres were synthesized by a hydrothermal route. The structure and surface morphology of the as-prepared MoS2 was characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The supercapacitive behavior of MoS2 in 1 M KCl electrolyte was studied by means of cyclic voltammetry (CV), constant current charge-discharge cycling (CD) and electrochemical impedance spectroscopy (EIS). The XRD results indicate that the as-prepared MoS2 has good crystallinity. SEM images show that the MoS2 nanospheres have uniform sizes with mean diameter about 300 nm. Many nanosheets growing on the surface make the MoS2 nanospheres to be a flower-like structure. The specific capacitance of MoS2 is 122 F x g(-1) at 1 A x g(-1) or 114 F x g(-1) at 2 mv s(-1). All the experimental results indicate that MoS2 is a promising electrode material for electrochemical supercapacitors.

Synthesis of Monolayer MoS2 by Chemical Vapor Deposition

Science.gov (United States)

Withanage, Sajeevi; Lopez, Mike; Dumas, Kenneth; Jung, Yeonwoong; Khondaker, Saiful

Finite and layer-tunable band gap of transition metal dichalcogenides (TMDs) including molybdenum disulfide (MoS2) are highlighted over the zero band gap graphene in various semiconductor applications. Weak interlayer Van der Waal bonding of bulk MoS2 allows to cleave few to single layer MoS2 using top-down methods such as mechanical and chemical exfoliation, however few micron size of these flakes limit MoS2 applications to fundamental research. Bottom-up approaches including the sulfurization of molybdenum (Mo) thin films and co-evaporation of Mo and sulfur precursors received the attention due to their potential to synthesize large area. We synthesized monolayer MoS2 on Si/SiO2 substrates by atmospheric pressure Chemical Vapor Deposition (CVD) methods using sulfur and molybdenum trioxide (MoO3) as precursors. Several growth conditions were tested including precursor amounts, growth temperature, growth time and flow rate. Raman, photoluminescence (PL) and atomic force microscopy (AFM) confirmed monolayer islands merging to create large area were observed with grain sizes up to 70 μm without using any seeds or seeding promoters. These studies provide in-depth knowledge to synthesize high quality large area MoS2 for prospective electronics applications.

Richardson constant and electrostatics in transfer-free CVD grown few-layer MoS2/graphene barristor with Schottky barrier modulation >0.6eV

Science.gov (United States)

Jahangir, Ifat; Uddin, M. Ahsan; Singh, Amol K.; Koley, Goutam; Chandrashekhar, M. V. S.

2017-10-01

We demonstrate a large area MoS2/graphene barristor, using a transfer-free method for producing 3-5 monolayer (ML) thick MoS2. The gate-controlled diodes show good rectification, with an ON/OFF ratio of ˜103. The temperature dependent back-gated study reveals Richardson's coefficient to be 80.3 ± 18.4 A/cm2/K and a mean electron effective mass of (0.66 ± 0.15)m0. Capacitance and current based measurements show the effective barrier height to vary over a large range of 0.24-0.91 eV due to incomplete field screening through the thin MoS2. Finally, we show that this barristor shows significant visible photoresponse, scaling with the Schottky barrier height. A response time of ˜10 s suggests that photoconductive gain is present in this device, resulting in high external quantum efficiency.

Supercapacitive properties of hydrothermally synthesized sphere like MoS2 nanostructures

International Nuclear Information System (INIS)

Krishnamoorthy, Karthikeyan; Veerasubramani, Ganesh Kumar; Radhakrishnan, Sivaprakasam; Kim, Sang Jae

2014-01-01

Highlights: • MoS 2 nanostructures were synthesized by hydrothermal method. • Randomly stacked MoS 2 was obtained. • FE-SEM studies show the sphere like morphology of MoS 2 . • Specific capacitance of 92.85 F/g was achieved using charge–discharge analysis. • MoS 2 electrode shows capacitance retention of about 93.8% after 1000 cycles. - Abstract: In this communication, we have investigated the supercapacitive behaviour of MoS 2 nanostructures prepared by a facile one-pot hydrothermal approach using ammonium heptamolybdate and thiourea as starting materials. The X-ray diffraction study revealed the formation of randomly stacked layers of MoS 2 . The field-emission scanning electron microscope studies suggested the formation of sphere like MoS 2 nanostructures and a plausible mechanism for the formation of the obtained structure is discussed. The cyclic voltammetry study shows the typical rectangular shaped curves with a specific capacitance of 106 F/g at a scan rate of 5 mV/s. Galvanostatic charge–discharge measurements suggested the maximum specific capacitance of about 92.85 F/g at discharge current density of 0.5 mA/cm 2 . Cyclic stability tests revealed the capacitance retention of about 93.8% after 1000 cycles suggesting a good cyclic capacity of the prepared MoS 2 . The electrochemical impedance spectroscopic results such as Nyquist and Bode phase angle plots suggested that the hydrothermally synthesized MoS 2 nanostructures will be a suitable candidate for electrochemical supercapacitor applications

Thermochemical study of MoS2 oxidation

International Nuclear Information System (INIS)

Filimonov, D.S.; Topor, N.D.; Kesler, Ya.A.

1990-01-01

Thermochemical studies of oxidation processes of metallic molybdenum, sulfur, molybdenum disulfide under different conditions in microcalorimeter are conducted. Values of thermal effects which are used to calculate standard formation enthalpy of MoS 2 and which correlate well are obtained. Δ f H 0 (MoS 2 ,298.15 K) recommended value constitutes (-223.0±16.7) kJ/mol

Solar cell array for driving MOS type FET gate. MOS gata EFT gate kudoyo taiyo denchi array

Energy Technology Data Exchange (ETDEWEB)

Murakami, S; Yoshida, K; Yoshiki, T; Yamaguchi, Y; Nakayama, T; Owada, Y

1990-03-12

There has been a semiconductor relay utilizing MOS type FET (field effect transistor). Concerning the solar cells used for a semiconductor relay, it is required to separate the cells by forming insulating oxide films first and to form semiconductor layers by using many mask patterns, since a crystal semiconductor is used. Thereby its manufacturing process becomes complicated and laminification as well as thin film formation are difficult, In view of the above, this invention proposes a solar cell array for driving a MOS type FET gate consisting of amorphous silicon semiconductor cells, which are used for a semiconductor relay with solar cells generating electromotive power by the light of a light emitting diode and a MOS type FET that the power output of the above solar cells is supplied to its gate, and which are connected in series with many steps. 9 figs.

Scalable Patterning of MoS2Nanoribbons by Micromolding in Capillaries

KAUST Repository

Hung, Yu-Han

2016-07-27

In this study, we report a facile approach to prepare dense arrays of MoS2 nanoribbons by combining procedures of micromolding in capillaries (MIMIC) and thermolysis of thiosalts ((NH4)2MoS4) as the printing ink. The obtained MoS2 nanoribbons had a thickness reaching as low as 3.9 nm, a width ranging from 157 to 465 nm, and a length up to 2 cm. MoS2 nanoribbons with an extremely high aspect ratio (length/width) of ∼7.4 × 108 were achieved. The MoS2 pattern can be printed on versatile substrates, such as SiO2/Si, sapphire, Au film, FTO/glass, and graphene-coated glass. The degree of crystallinity of the as-prepared MoS2 was discovered to be adjustable by varying the temperature through postannealing. The high-temperature thermolysis (1000 °C) results in high-quality conductive samples, and field-effect transistors based on the patterned MoS2 nanoribbons were demonstrated and characterized, where the carrier mobility was comparable to that of thin-film MoS2. In contrast, the low-temperature-treated samples (170 °C) result in a unique nanocrystalline MoSx structure (x ≈ 2.5), where the abundant and exposed edge sites were obtained from highly dense arrays of nanoribbon structures by this MIMIC patterning method. The patterned MoSx was revealed to have superior electrocatalytic efficiency (an overpotential of ∼211 mV at 10 mA/cm2 and a Tafel slope of 43 mV/dec) in the hydrogen evolution reaction (HER) when compared to the thin-film MoS2. The report introduces a new concept for rapidly fabricating cost-effective and high-density MoS2/MoSx nanostructures on versatile substrates, which may pave the way for potential applications in nanoelectronics/optoelectronics and frontier energy materials. © 2016 American Chemical Society.

Evaluating Mechanical Properties of Few Layers MoS2 Nanosheets-Polymer Composites

Directory of Open Access Journals (Sweden)

Muhammad Bilal Khan

2017-01-01

Full Text Available The reinforcement effects of liquid exfoliated molybdenum disulphide (MoS2 nanosheets, dispersed in polystyrene (PS matrix, are evaluated here. The range of composites (0~0.002 volume fraction (Vf MoS2-PS is prepared via solution casting. Size selected MoS2 nanosheets (3~4 layers, with a lateral dimension L 0.5~1 µm, have improved Young’s modulus up to 0.8 GPa for 0.0002 Vf MoS2-PS as compared to 0.2 GPa observed for PS only. The ultimate tensile strength (UTS is improved considerably (~×3 with a minute addition of MoS2 nanosheets (0.00002 Vf. The MoS2 nanosheets lateral dimension and number of layers are approximated using atomic force microscopy (AFM. The composites formation is confirmed using X-ray diffraction (XRD and scanning electron microscopy (SEM. Theoretical predicted results (Halpin-Tsai model are well below the experimental findings, especially at lower concentrations. Only at maximum concentrations, the experimental and theoretical results coincide. The high aspect ratio of MoS2 nanosheets, homogeneous dispersion inside polymer, and their probable planar orientation are the possible reasons for the effective stress transfer, resulting in enhanced mechanical characteristics. Moreover, the micro-Vickers hardness (HV of the MoS2-PS is also improved from 19 (PS to 23 (0.002 Vf MoS2-PS as MoS2 nanosheets inclusion may hinder the deformation more effectively.

Achieving Ohmic Contact for High-quality MoS2 Devices on Hexagonal Boron Nitride

Science.gov (United States)

Cui, Xu

MoS2, among many other transition metal dichalcogenides (TMDCs), holds great promise for future applications in nano-electronics, opto-electronics and mechanical devices due to its ultra-thin nature, flexibility, sizable band-gap, and unique spin-valley coupled physics. However, there are two main challenges that hinder careful study of this material. Firstly, it is hard to achieve Ohmic contacts to mono-layer MoS2, particularly at low temperatures (T) and low carrier densities. Secondly, materials' low quality and impurities introduced during the fabrication significantly limit the electron mobility of mono- and few-layer MoS2 to be substantially below theoretically predicted limits, which has hampered efforts to observe its novel quantum transport behaviours. Traditional low work function metals doesn't necessary provide good electron injection to thin MoS2 due to metal oxidation, Fermi level pinning, etc. To address the first challenge, we tried multiple contact schemes and found that mono-layer hexagonal boron nitride (h-BN) and cobalt (Co) provide robust Ohmic contact. The mono-layer spacer serves two advantageous purposes: it strongly interacts with the transition metal, reducing its work function by over 1 eV; and breaks the metal-TMDCs interaction to eliminate the interfacial states that cause Fermi level pinning. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kohm.um at a carrier density of 5.3x10. 12/cm. 2. Similar to graphene, eliminating all potential sources of disorder and scattering is the key to achieving high performance in MoS2 devices. We developed a van der Waals heterostructure device platform where MoS2 layers are fully encapsulated within h-BN and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. The h-BN-encapsulation provides excellent protection from environmental factors, resulting in

Confocal absorption spectral imaging of MoS2: optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS2.

Science.gov (United States)

Dhakal, Krishna P; Duong, Dinh Loc; Lee, Jubok; Nam, Honggi; Kim, Minsu; Kan, Min; Lee, Young Hee; Kim, Jeongyong

2014-11-07

We performed a nanoscale confocal absorption spectral imaging to obtain the full absorption spectra (over the range 1.5-3.2 eV) within regions having different numbers of layers and studied the variation of optical transition depending on the atomic thickness of the MoS2 film. Three distinct absorption bands corresponding to A and B excitons and a high-energy background (BG) peak at 2.84 eV displayed a gradual redshift as the MoS2 film thickness increased from the monolayer, to the bilayer, to the bulk MoS2 and this shift was attributed to the reduction of the gap energy in the Brillouin zone at the K-point as the atomic thickness increased. We also performed n-type chemical doping of MoS2 films using reduced benzyl viologen (BV) and the confocal absorption spectra modified by the doping showed a strong dependence on the atomic thickness: A and B exciton peaks were greatly quenched in the monolayer MoS2 while much less effect was shown in larger thickness and the BG peak either showed very small quenching for 1 L MoS2 or remained constant for larger thicknesses. Our results indicate that confocal absorption spectral imaging can provide comprehensive information on optical transitions of microscopic size intrinsic and doped two-dimensional layered materials.

Photoelectrochemical-type sunlight photodetector based on MoS2/graphene heterostructure

International Nuclear Information System (INIS)

Huang, Zongyu; Han, Weijia; Chander, D Sathish; Qi, Xiang; Zhang, Han; Tang, Hongli; Ren, Long

2015-01-01

We have fabricated a novel sunlight photo-detector based on a MoS 2 /graphene heterostructure. The MoS 2 /graphene heterostructure was prepared by a facile hydrothermal method along with a subsequent annealing process followed by a substrate-induced high selective nucleation and growth mechanism. The microstructures and morphologies of the two-dimensional MoS 2 /graphene heterostructure can be experimentally confirmed by x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and a UV–vis absorption spectrometer. Photoresponse investigations performed by a photoelectrochemical (PEC) measurement system indicate that the synthesized MoS 2 /graphene heterostructure shows superior photoresponse activities under the illumination of sunlight in contrast with bare MoS 2 and graphene. The improved photoresponsivity can be attributed to the enhanced light absorption, strong light–matter interaction and the extremely efficient charge separation of the heterostructure. The structure and performances of the MoS 2 /graphene heterostructure suggest promising applications in the field of photonics and optoelectronics. (paper)

Ultrafast photocurrents in monolayer MoS2

Science.gov (United States)

Parzinger, Eric; Wurstbauer, Ursula; Holleitner, Alexander W.

Two-dimensional transition metal dichalcogenides such as MoS2 have emerged as interesting materials for optoelectronic devices. In particular, the ultrafast dynamics and lifetimes of photoexcited charge carriers have attracted great interest during the last years. We investigate the photocurrent response of monolayer MoS2 on a picosecond time scale utilizing a recently developed pump-probe spectroscopy technique based on coplanar striplines. We discuss the ultrafast dynamics within MoS2 including photo-thermoelectric currents and the impact of built-in fields due to Schottky barriers as well as the Fermi level pinning at the contact region. We acknowledge support by the ERC via Project 'NanoREAL', the DFG via excellence cluster 'Nanosystems Initiative Munich' (NIM), and through the TUM International Graduate School of Science and Engineering (IGSSE) and BaCaTeC.

Theoretical prediction of high electron mobility in multilayer MoS2 heterostructured with MoSe2

Science.gov (United States)

Ji, Liping; Shi, Juan; Zhang, Z. Y.; Wang, Jun; Zhang, Jiachi; Tao, Chunlan; Cao, Haining

2018-01-01

Two-dimensional (2D) MoS2 has been considered to be one of the most promising semiconducting materials with the potential to be used in novel nanoelectronic devices. High carrier mobility in the semiconductor is necessary to guarantee a low power dissipation and a high switch speed of the corresponding electronic device. Strain engineering in 2D materials acts as an important approach to tailor and design their electronic and carrier transport properties. In this work, strain is introduced to MoS2 through perpendicularly building van der Waals heterostructures MoSe2-MoS2. Our first-principles calculations demonstrate that acoustic-phonon-limited electron mobility can be significantly enhanced in the heterostructures compared with that in pure multilayer MoS2. It is found that the effective electron mass and the deformation potential constant are relatively smaller in the heterostructures, which is responsible for the enhancement in the electron mobility. Overall, the electron mobility in the heterostructures is about 1.5 times or more of that in pure multilayer MoS2 with the same number of layers for the studied structures. These results indicate that MoSe2 is an excellent material to be heterostructured with multilayer MoS2 to improve the charge transport property.

Interfacial chemical reactions between MoS2 lubricants and bearing materials

Science.gov (United States)

Zabinski, J. S.; Tatarchuk, B. J.

1989-01-01

XPS and conversion-electron Moessbauer spectroscopy (CEMS) were used to examine iron that was deposited on the basal plane of MoS2 single crystals and subjected to vacuum annealing, oxidizing, and reducing environments. Iron either intercalated into the MoS2 structure or formed oriented iron sulfides, depending on the level of excess S in the MoS2 structure. CEMS data demonstrated that iron sulfide crystal structures preferentially aligned with respect to the MoS2 basal plane, and that alignment (and potentially adhesion) could be varied by appropriate high-temperature annealing procedures.

Sequential structural and optical evolution of MoS2 by chemical synthesis and exfoliation

Science.gov (United States)

Kim, Ju Hwan; Kim, Jungkil; Oh, Si Duck; Kim, Sung; Choi, Suk-Ho

2015-06-01

Various types of MoS2 structures are successfully obtained by using economical and facile sequential synthesis and exfoliation methods. Spherically-shaped lumps of multilayer (ML) MoS2 are prepared by using a conventional hydrothermal method and were subsequently 1st-exfoliated in hydrazine while being kept in autoclave to be unrolled and separated into five-to-six-layer MoS2 pieces of several-hundred nm in size. The MoS2 MLs are 2nd-exfoliated in sodium naphthalenide under an Ar ambient to finally produce bilayer MoS2 crystals of ~100 nm. The sequential exfoliation processes downsize MoS2 laterally and reduce its number of layers. The three types of MoS2 allotropes exhibit particular optical properties corresponding to their structural differences. These results suggest that two-dimensional MoS2 crystals can be prepared by employing only chemical techniques without starting from high-pressure-synthesized bulk MoS2 crystals.

Growth, structure and stability of sputter-deposited MoS2 thin films

Directory of Open Access Journals (Sweden)

Reinhard Kaindl

2017-05-01

Full Text Available Molybdenum disulphide (MoS2 thin films have received increasing interest as device-active layers in low-dimensional electronics and also as novel catalysts in electrochemical processes such as the hydrogen evolution reaction (HER in electrochemical water splitting. For both types of applications, industrially scalable fabrication methods with good control over the MoS2 film properties are crucial. Here, we investigate scalable physical vapour deposition (PVD of MoS2 films by magnetron sputtering. MoS2 films with thicknesses from ≈10 to ≈1000 nm were deposited on SiO2/Si and reticulated vitreous carbon (RVC substrates. Samples deposited at room temperature (RT and at 400 °C were compared. The deposited MoS2 was characterized by macro- and microscopic X-ray, electron beam and light scattering, scanning and spectroscopic methods as well as electrical device characterization. We find that room-temperature-deposited MoS2 films are amorphous, of smooth surface morphology and easily degraded upon moderate laser-induced annealing in ambient conditions. In contrast, films deposited at 400 °C are nano-crystalline, show a nano-grained surface morphology and are comparatively stable against laser-induced degradation. Interestingly, results from electrical transport measurements indicate an unexpected metallic-like conduction character of the studied PVD MoS2 films, independent of deposition temperature. Possible reasons for these unusual electrical properties of our PVD MoS2 thin films are discussed. A potential application for such conductive nanostructured MoS2 films could be as catalytically active electrodes in (photo-electrocatalysis and initial electrochemical measurements suggest directions for future work on our PVD MoS2 films.

Charge-Transfer-Induced p-Type Channel in MoS2 Flake Field Effect Transistors.

Science.gov (United States)

Min, Sung-Wook; Yoon, Minho; Yang, Sung Jin; Ko, Kyeong Rok; Im, Seongil

2018-01-31

The two-dimensional transition-metal dichalcogenide semiconductor MoS 2 has received extensive attention for decades because of its outstanding electrical and mechanical properties for next-generation devices. One weakness of MoS 2 , however, is that it shows only n-type conduction, revealing its limitations for homogeneous PN diodes and complementary inverters. Here, we introduce a charge-transfer method to modify the conduction property of MoS 2 from n- to p-type. We initially deposited an n-type InGaZnO (IGZO) film on top of the MoS 2 flake so that electron charges might be transferred from MoS 2 to IGZO during air ambient annealing. As a result, electron charges were depleted in MoS 2 . Such charge depletion lowered the MoS 2 Fermi level, which makes hole conduction favorable in MoS 2 when optimum source/drain electrodes with a high work function are selected. Our IGZO-supported MoS 2 flake field effect transistors (FETs) clearly display channel-type conversion from n- to p-channel in this way. Under short- and long-annealing conditions, n- and p-channel MoS 2 FETs are achieved, respectively, and a low-voltage complementary inverter is demonstrated using both channels in a single MoS 2 flake.

A pressure tuned stop-flow atomic layer deposition process for MoS2 on high porous nanostructure and fabrication of TiO2/MoS2 core/shell inverse opal structure

Science.gov (United States)

Li, Xianglin; Puttaswamy, Manjunath; Wang, Zhiwei; Kei Tan, Chiew; Grimsdale, Andrew C.; Kherani, Nazir P.; Tok, Alfred Iing Yoong

2017-11-01

MoS2 thin films are obtained by atomic layer deposition (ALD) in the temperature range of 120-150 °C using Mo(CO)6 and dimethyl disulfide (DMDS) as precursors. A pressure tuned stop-flow ALD process facilitates the precursor adsorption and enables the deposition of MoS2 on high porous three dimensional (3D) nanostructures. As a demonstration, a TiO2/MoS2 core/shell inverse opal (TiO2/MoS2-IO) structure has been fabricated through ALD of TiO2 and MoS2 on a self-assembled multilayer polystyrene (PS) structure template. Due to the self-limiting surface reaction mechanism of ALD and the utilization of pressure tuned stop-flow ALD processes, the as fabricated TiO2/MoS2-IO structure has a high uniformity, reflected by FESEM and FIB-SEM characterization. A crystallized TiO2/MoS2-IO structure can be obtained through a post annealing process. As a 3D photonic crystal, the TiO2/MoS2-IO exhibits obvious stopband reflecting peaks, which can be adjusted through changing the opal diameters as well as the thickness of MoS2 layer.

Ultra-broadband nonlinear saturable absorption of high-yield MoS2 nanosheets

Science.gov (United States)

Wei, Rongfei; Zhang, Hang; Hu, Zhongliang; Qiao, Tian; He, Xin; Guo, Qiangbing; Tian, Xiangling; Chen, Zhi; Qiu, Jianrong

2016-07-01

High-yield MoS2 nanosheets with strong nonlinear optical (NLO) responses in a broad near-infrared range were synthesized by a facile hydrothermal method. The observation of saturable absorption, which was excited by the light with photon energy smaller than the gap energy of MoS2, can be attributed to the enhancement of the hybridization between the Mo d-orbital and S p-orbital by the oxygen incorporation into MoS2. High-yield MoS2 nanosheets with high modulation depth and large saturable intensity generated a stable, passively Q-switched fiber laser pulse at 1.56 μm. The high output power of 1.08 mW can be attained under a very low pump power of 30.87 mW. Compared to recently reported passively Q-switched fiber lasers utilizing exfoliated MoS2 nanosheets, the efficiency of the laser for our passive Q-switching operation is larger and reaches 3.50%. This research may extend the understanding on the NLO properties of MoS2 and indicate the feasibility of the high-yield MoS2 nanosheets to passively Q-switched fiber laser effectively at low pump strengths.

Strongly luminescent monolayered MoS2 prepared by effective ultrasound exfoliation.

Science.gov (United States)

Štengl, Václav; Henych, Jiří

2013-04-21

Intense ultrasound in a pressurized batch reactor was used for preparation of monolayered MoS2 nanosheets from natural mineral molybdenite. Exfoliation of bulk MoS2 using ultrasound is an attractive route to large-scale preparation of monolayered crystals. To evaluate the quality of delamination, methods like X-ray diffraction, Raman spectroscopy and microscopic techniques (TEM and AFM) were employed. From single- or few-layered products obtained from intense sonication, MoS2 quantum dots (MoSQDs) were prepared by a one-pot reaction by refluxing exfoliated nanosheets of MoS2 in ethylene glycol under atmospheric pressure. The synthesised MoSQDs were characterised by photoluminescence spectroscopy and laser-scattering particle size analysis. Our easy preparation leads to very strongly green luminescing quantum dots.

Comparitive study of fluorescence lifetime quenching of rhodamine 6G by MoS2 and Au-MoS2

Science.gov (United States)

Shakya, Jyoti; Kasana, Parath; Mohanty, T.

2018-04-01

Time resolved fluorescence study of Rhodamine 6G (R6G) in the presence of Molybdenum disulfide (MoS2) nanosheets and gold doped MoS2 (Au-MoS2) have been carried out and discussed. We have analyzed the fluorescence decay curves of R6G and it is observed that Au-MoS2 is a better fluorescence lifetime quencher as compare to MoS2 nanosheets. Also, the energy transfer efficiency and energy transfer rate from R6G to MoS2 and Au-MoS2 has been calculated and found higher for Au-MoS2.

Non-stoichiometry of MoS2 phase prepared by sputtering

International Nuclear Information System (INIS)

Ito, T.; Nakajima, K.

1978-01-01

The lattice parameters and S/Mo atomic ratio in sputtered MoS 2 films have been examined as a function of sputtering conditions, especially the vacuum pressure in the chamber. It was found that the deposited films had a defect MoS 2 structure ranging from 1.6 to 2 in S/Mo ratio, depending on the pressure. (author)

Plasmons on the edge of MoS2 nanostructures

DEFF Research Database (Denmark)

Andersen, Kirsten; Jacobsen, Karsten Wedel; Thygesen, Kristian Sommer

2014-01-01

Using ab initio calculations we predict the existence of one-dimensional (1D), atomically confined plasmons at the edges of a zigzag MoS2 nanoribbon. The strongest plasmon originates from a metallic edge state localized on the sulfur dimers decorating the Mo edge of the ribbon. A detailed analysis...... of the dielectric function reveals that the observed deviations from the ideal 1D plasmon behavior result from single-particle transitions between the metallic edge state and the valence and conduction bands of the MoS2 sheet. The Mo and S edges of the ribbon are clearly distinguishable in calculated spatially...... resolved electron energy loss spectrum owing to the different plasmonic properties of the two edges. The edge plasmons could potentially be utilized for tuning the photocatalytic activity of MoS2 nanoparticles....

Preparation and tribological properties of MoS2/graphene oxide composites

Science.gov (United States)

Song, Haojie; Wang, Biao; Zhou, Qiang; Xiao, Jiaxuan; Jia, Xiaohua

2017-10-01

A hydrothermal route is developed for the synthesis of MoS2/graphene oxide (GO) composites based on the hydrothermal reduction of Na2MoO4 and GO sheets with L-cysteine. The MoS2/GO composites in improving friction and wear of the sunshine oil on sliding steel surfaces under low or high applied load were demonstrated. In tests with sliding steel surfaces, the sunshine oil that contains small amounts of MoS2/GO composites exhibited the lowest specific friction coefficient and wear rate under all of the sliding conditions. Scanning electron microscopy and energy dispersive spectrometer performed to analyze the wear scar surfaces after friction confirmed that the outstanding lubrication performance of MoS2/GO composites could be attributed to their good dispersion stability and extremely thin laminated structure, which allow the MoS2/GO composites to easily enter the contact area, thereby preventing the rough surfaces from coming into direct contact.

Valley- and spin-filter in monolayer MoS2

Science.gov (United States)

Majidi, Leyla; Zare, Moslem; Asgari, Reza

2014-12-01

We propose a valley- and spin-filter based on a normal/ferromagnetic/normal molybdenum disulfide (MoS2) junction where the polarizations of the valley and the spin can be inverted by reversing the direction of the exchange field in the ferromagnetic region. By using a modified Dirac Hamiltonian and the scattering formalism, we find that the polarizations can be tuned by applying a gate voltage and changing the exchange field in the structure. We further demonstrate that the presence of a topological term (β) in the Hamiltonian results in an enhancement or a reduction of the charge conductance depending on the value of the exchange field.

Enhanced photoresponse of monolayer molybdenum disulfide (MoS2) based on microcavity structure

Science.gov (United States)

Lu, Yanan; Yang, Guofeng; Wang, Fuxue; Lu, Naiyan

2018-05-01

There is an increasing interest in using monolayer molybdenum disulfide (MoS2) for optoelectronic devices because of its inherent direct band gap characteristics. However, the weak absorption of monolayer MoS2 restricts its applications, novel concepts need to be developed to address the weakness. In this work, monolayer MoS2 monolithically integrates with plane microcavity structure, which is formed by the top and bottom chirped distributed Bragg reflector (DBR), is demonstrated to improve the absorption of MoS2. The optical absorption is 17-fold enhanced, reaching values over 70% at work wavelength. Moreover, the monolayer MoS2-based photodetector device with microcavity presents a significantly increased photoresponse, demonstrating its promising prospects in MoS2-based optoelectronic devices.

Exfoliated MoS2 nanosheets as efficient catalysts for electrochemical hydrogen evolution

International Nuclear Information System (INIS)

Ji, Shanshan; Yang, Zhe; Zhang, Chao; Liu, Zhenyan; Tjiu, Weng Weei; Phang, In Yee; Zhang, Zheng; Pan, Jisheng; Liu, Tianxi

2013-01-01

Graphical abstract: An efficient electrocatalyst for hydrogen evolution has been developed based on exfoliation of bulk MoS 2 crystals via a direct dispersion and ultrasonication method. Drop-casting method is used to fabricate the exfoliated MoS 2 nanosheets modified glass carbon electrode (E-MoS 2 /GCE) with various loadings. The E-MoS 2 /GCE with electrode loading of 48 μg cm −1 exhibits high catalytic activity for hydrogen evolution with a low overpotential (−0.12 V) and a high current density (1.26 mA cm −2 , at η = 150 mV). -- Highlights: • Two-dimensional MoS 2 nanosheets have been obtained by exfoliation of bulk MoS 2 crystals. • Exfoliated MoS 2 nanosheets show high electrocatalytic activity for H 2 production. • This study provides a new approach for renewable and economic H 2 production. -- Abstract: An efficient electrocatalyst for hydrogen evolution has been developed based on liquid exfoliation of bulk MoS 2 via a direct dispersion and ultrasonication method. Transmission electron microscopy and atomic force microscopy measurements show that the exfoliated MoS 2 consists of two-dimensional nanosheets. The exfoliated MoS 2 nanosheets modified glass carbon electrode (E-MoS 2 /GCE) with various loadings is fabricated via a drop-casting method. The electrocatalytic activity of E-MoS 2 /GCE toward hydrogen evolution reaction is examined using linear sweep voltammetry. It is shown that the E-MoS 2 /GCE with an electrode loading of 48 μg cm −2 exhibits a high catalytic activity for hydrogen evolution with a low overpotential (−0.12 V) and a high current density (1.26 mA cm −2 , at η = 150 mV)

Two-dimensional MoS2: A promising building block for biosensors.

Science.gov (United States)

Gan, Xiaorong; Zhao, Huimin; Quan, Xie

2017-03-15

Recently, two-dimensional (2D) layered nanomaterials have trigged intensive interest due to the intriguing physicochemical properties that stem from a quantum size effect connected with their ultra-thin structure. In particular, 2D molybdenum disulfide (MoS 2 ), as an emerging class of stable inorganic graphene analogs with intrinsic finite bandgap, would possibly complement or even surpass graphene in electronics and optoelectronics fields. In this review, we first discuss the historical development of ultrathin 2D nanomaterials. Then, we are concerned with 2D MoS 2 including its structure-property relationships, synthesis methods, characterization for the layer thickness, and biosensor applications over the past five years. Thereinto, we are highlighting recent advances in 2D MoS 2 -based biosensors, especially emphasize the preparation of sensing elements, roles of 2D MoS 2 , and assay strategies. Finally, on the basis of the current achievements on 2D MoS 2 and other ultrathin layered nanomaterials, perspectives on the challenges and opportunities for the exploration of 2D MoS 2 -based biosensors are put forward. Copyright © 2016 Elsevier B.V. All rights reserved.

High conductivity graphene-like MoS2/polyaniline nanocomposites and its application in supercapacitor

International Nuclear Information System (INIS)

Wang, Jin; Wu, Zongchao; Hu, Kunhong; Chen, Xiangying; Yin, Huabing

2015-01-01

Highlights: • A facile synthesis method of MoS 2 /PANI intercalated nanocomposites is developed. • There is synergistic effect between PANI and MoS 2 layer in the MoS 2 /PANI composites. • Intercalation is benefit for electrons transportation and conductivity increase. • The well-defined MoS 2 /PANI have good specific capacitances and long cyclic life. - Abstract: High conductivity nanocomposites of molybdenum disulfide (MoS 2 )/polyaniline (PANI) were prepared via direct intercalation of aniline monomer and doped with dodecyl benzene sulfonic acid (DBSA). The intercalated interaction between PANI and MoS 2 improves the conductivity and thermal stability of MoS 2 /PANI nanocomposites with the increasing fraction of MoS 2 . The conductivity and maximum weight loss velocity temperature of PANI/MoS 2 -38 sample are 2.38 S cm −1 and 353 °C, respectively. This architecture is also advantageous for enhancing the capacitance properties and cyclic stabilities of MoS 2 /PANI electrodes. In comparison to the specific capacitance of 131 F/g and 42% retained capacitance over 600 cycles of PANI electrode, the MoS 2 /PANI-38 electrode provides a specific capacitance up to 390 F/g and 86% retained capacitance over 1000 cycles. Thus it provides an improved capacitance method which synergistically combines pseudocapacitance and double-layer capacitance for supercapacitor electrodes

Morphology-controlled synthesis of MoS2 nanostructures with different lithium storage properties

International Nuclear Information System (INIS)

Wang, Xiwen; Zhang, Zhian; Chen, Yaqiong; Qu, Yaohui; Lai, Yanqing; Li, Jie

2014-01-01

Highlights: • MoS 2 nanospheres, nanoribbons and nanoparticles were prepared by hydrothermal method. • The surfactant and temperature control the shape and crystal structure of MoS 2 . • MoS 2 nanospheres exhibit the excellent lithium storage property. - Abstract: A one-step hydrothermal process was employed to prepare a series of MoS 2 nanostructures via simply altering the surfactant as soft template and hydrothermal reaction temperature. Three kinds of MoS 2 nanostructures (three-dimensional (3D) hierarchical nanospheres, one-dimensional (1D) nanoribbons, and large aggregated nanoparticles) were successfully achieved and investigated well by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), and Brunauer–Emmett–Teller analysis (BET). Electrochemical tests reveal that these MoS 2 samples could deliver high initial discharge capacities (higher than 1050.0 mA h g −1 ), but various cycling performances. The hierarchical MoS 2 nanospheres assembled by sheet-like subunits show the highest specific capacity of 1355.1 mA h g −1 , and 66.8% of which can be retained after 50 cycles. The good lithium storage property of hierarchical MoS 2 nanospheres can be attributed to the higher electrolyte/MoS 2 contact area and stable 3D layered structure

Quantum transport through MoS2 constrictions defined by photodoping

Science.gov (United States)

Epping, Alexander; Banszerus, Luca; Güttinger, Johannes; Krückeberg, Luisa; Watanabe, Kenji; Taniguchi, Takashi; Hassler, Fabian; Beschoten, Bernd; Stampfer, Christoph

2018-05-01

We present a device scheme to explore mesoscopic transport through molybdenum disulfide (MoS2) constrictions using photodoping. The devices are based on van-der-Waals heterostructures where few-layer MoS2 flakes are partially encapsulated by hexagonal boron nitride (hBN) and covered by a few-layer graphene flake to fabricate electrical contacts. Since the as-fabricated devices are insulating at low temperatures, we use photo-induced remote doping in the hBN substrate to create free charge carriers in the MoS2 layer. On top of the device, we place additional metal structures, which define the shape of the constriction and act as shadow masks during photodoping of the underlying MoS2/hBN heterostructure. Low temperature two- and four-terminal transport measurements show evidence of quantum confinement effects.

High pressure effect on MoS2 and MoSe2 single crystals grown by ...

Indian Academy of Sciences (India)

Unknown

tetrahedral anvil apparatus up to 5 GPa. In this paper we report room temperature resistance mea- surements as a function of pressure on MoS2 and MoSe2 single crystals. In each case the resistance decreases un- der pressure due to an increase in the carrier concentration. 2. Experimental. Single crystals of MoS2 and ...

Synthesis, characterization and photocatalytic performance of chemically exfoliated MoS2

Science.gov (United States)

Prabhakar Vattikuti, S. V.; Shim, Jaesool

2018-03-01

Two-dimensional (2D) layered structure transition metal dichalcogenides (TMDs) has gained huge attention and importance for photocatalytic energy conversion because of their unique properties. Molybdenum disulfide (MoS2) nanosheets were synthesized via one-pot method and exfoliated in (dimethylformamide) DMF solution. Subsequent exfoliated MoS2 nanosheets (e-MoS2) were used as photocatalysts for degradation of Rhodamine B (RhB) pollutant under solar light irradiation. The e-MoS2 nanosheets exhibited excellent photocatalytic activity than that of pristine MoS2, owing to high specific surface area with enormous active sites and light absorption capacity. In addition, e-MoS2 demonstrated remarkable photocatalytic stability.

Hydrothermal synthesis of 2D MoS 2 nanosheets for electrocatalytic hydrogen evolution reaction

KAUST Repository

Muralikrishna, S.

2015-10-20

Nanostructured molybdenum disulfide (MoS) is a very promising catalyst for producing molecular hydrogen by electrochemical methods. Herein, we have designed and synthesized highly electocatalytically active 2D MoS nanosheets (NS) from molybdenum trioxide (MoO) by a facile hydrothermal method and have compared their electrocatalytic activities for hydrogen evolution reaction (HER). The electrochemical characterization was performed using linear sweep voltammetry (LSV) in acidic medium. The MoS NS show a HER onset potential at about 80 mV vs. reversible hydrogen electrode (RHE) which is much lower than MoO (300 mV). The MoS NS and MoO show a current density of 25 mA cm and 0.3 mA cm, respectively at an overpotential of 280 mV vs. RHE. The MoS NS showed an 83 times higher current density when compared to MoO. The Tafel slopes of the MoS NS and MoO were about 90 mV per dec and 110 mV per dec respectively. This suggests that MoS NS are a better electrocatalyst when compared to MoO and follow the Volmer-Heyrovsky mechanism for HER.

Hydrothermal synthesis of 2D MoS 2 nanosheets for electrocatalytic hydrogen evolution reaction

KAUST Repository

Muralikrishna, S.; Manjunath, K.; Samrat, D.; Reddy, Viswanath; Ramakrishnappa, T.; Nagaraju, Doddahalli H.

2015-01-01

Nanostructured molybdenum disulfide (MoS) is a very promising catalyst for producing molecular hydrogen by electrochemical methods. Herein, we have designed and synthesized highly electocatalytically active 2D MoS nanosheets (NS) from molybdenum trioxide (MoO) by a facile hydrothermal method and have compared their electrocatalytic activities for hydrogen evolution reaction (HER). The electrochemical characterization was performed using linear sweep voltammetry (LSV) in acidic medium. The MoS NS show a HER onset potential at about 80 mV vs. reversible hydrogen electrode (RHE) which is much lower than MoO (300 mV). The MoS NS and MoO show a current density of 25 mA cm and 0.3 mA cm, respectively at an overpotential of 280 mV vs. RHE. The MoS NS showed an 83 times higher current density when compared to MoO. The Tafel slopes of the MoS NS and MoO were about 90 mV per dec and 110 mV per dec respectively. This suggests that MoS NS are a better electrocatalyst when compared to MoO and follow the Volmer-Heyrovsky mechanism for HER.

Oxidation of MoS2 by thermal and hyperthermal atomic oxygen

International Nuclear Information System (INIS)

Cross, J.B.; Martin, J.A.; Pope, L.E.; Koontz, S.L.

1989-01-01

The present study shows that, at 1.5 eV O-atom translational energy, SO 2 is generated and outgases from an anhydrous MoS 2 surface with a reactivity nearly that of kapton. The reaction of atomic oxygen with MoS 2 has little or no translational energy barrier; i.e., thermally generated atomic oxygen reacts as readily as that having 1.5 eV of translational energy. It is also shown that water present in the flowing afterglow apparatus used to study thermal O-atom reactivity formed sulfates on the MoS 2 surface and that the sulfate is most likely in the form of sulfuric acid. These results imply that water dumps or outgasing in low earth orbit have the potential of forming sulfuric acid covered surfaces on MoS 2 lubricants. Friction measurements show a high initial friction coefficient (0.2) for O-atom exposed MoS 2 surfaces which drops to the normal low value (0.05) after several cycles of operation

MoS2-modified ZnO quantum dots nanocomposite: Synthesis and ultrafast humidity response

International Nuclear Information System (INIS)

Ze, Lu; Yueqiu, Gong; Xujun, Li; Yong, Zhang

2017-01-01

Highlights: • MoS 2 @ZnO QDs composite structure was synthesized by two-steps methods. • Ultrafast humidity sensing response is achieved by MoS 2 @ZnO QDs humidity sensor. • Sensor performs excellent cycle stability from 11% to 95% RH. • Humidity sensor could detect wide humidity range (11–95%). - Abstract: In this work, ZnO quantum dots (QDs), layered MoS 2 and MoS 2 -modified ZnO QDs (MoS 2 @ZnO QDs) nanocomposite were synthesized and then applied as humidity sensor. The crystal structure, morphology and element distribution of ZnO QDs, MoS 2 and MoS 2 @ZnO QDs were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectrometry, respectively. The humidity sensing characteristics of the MoS 2 and MoS 2 @ZnO QDs against various relative humidity were measured at room temperature. The results show that the MoS 2 @ZnO QDs sensor exhibits high sensitivity with an impedance variation of three or four orders of magnitude to relative humidity range of 11–95% and it exhibits a short response-recovery time (1 s for adsorption and 20 s for desorption) and excellent repeatability. The mechanisms of the excellent performance for humidity sensing of MoS 2 @ZnO QDs sensor were discussed based on its impedance properties. Our work could offer guidelines to design higher performance especially ultrafast humidity response sensor utilizing the nanocomposite structure with two dimensional material and QDs.

MoS2 @HKUST-1 Flower-Like Nanohybrids for Efficient Hydrogen Evolution Reactions.

Science.gov (United States)

Wang, Chengli; Su, Yingchun; Zhao, Xiaole; Tong, Shanshan; Han, Xiaojun

2018-01-24

A novel MoS 2 -based flower-like nanohybrid for hydrogen evolution was fabricated through coating the Cu-containing metal-organic framework (HKUST-1) onto MoS 2 nanosheets. It is the first time that MoS 2 @HKUST-1 nanohybrids have been reported for the enhanced electrochemical performance of HER. The morphologies and components of the MoS 2 @HKUST-1 flower-like nanohybrids were characterized by scanning electron microscopy, X-ray diffraction analysis and Fourier transform infrared spectroscopy. Compared with pure MoS 2 , the MoS 2 @HKUST-1 hybrids exhibit enhanced performance on hydrogen evolution reaction with an onset potential of -99 mV, a smaller Tafel slope of 69 mV dec -1 , and a Faradaic efficiency of nearly 100 %. The MoS 2 @HKUST-1 flower-like nanohybrids exhibit excellent stability in acidic media. This design opens new possibilities to effectively synthesize non-noble metal catalysts with high performance for the hydrogen evolution reaction (HER). © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Adsorption studies of alcohol molecules on monolayer MoS_2 nanosheet—A first-principles insights

International Nuclear Information System (INIS)

Nagarajan, V.; Chandiramouli, R.

2017-01-01

Highlights: • The adsorption of methanol, ethanol & 1-propanol on MoS_2 nanosheet are studied. • The PDOS & band structure confirms adsorption of alcohol vapors on MoS_2 nanosheet. • The adsorption of 1-propanol vapor on MoS_2 nanosheet is more favorable. • The alcohol molecules adsorption on MoS_2 nanosheet is explored in atomistic level. - Abstract: The electronic and adsorption properties of three different alcohol molecules namely methanol, ethanol and 1-propanol vapors on MoS_2 nanosheet is investigated using DFT method. The structural stability of MoS_2 nanosheet is ascertained with formation energy. The adsorption properties of alcohol molecules on MoS_2 base material is discussed in terms of average energy gap variation, Mulliken charge transfer, energy band gap and adsorption energy. The prominent adsorption sites of methanol, ethanol and 1-propanol vapors on MoS_2 nanosheet are studied in atomistic level. The projected density of states (PDOS) spectrum gives the clear insights on the electronic properties of MoS_2 nanosheet. The PDOS and energy band structure confirmed the adsorption of alcohol vapors on MoS_2 nanosheet. The variation in the band structure and PDOS is noticed upon adsorption of methanol, ethanol and 1-propanol molecules on MoS_2 nanosheet. The PDOS spectrum also reveals the variation in peak maxima owing to transfer of electron between alcohol molecules and MoS_2 base material. The adsorption of 1-propanol vapor on MoS_2 nanosheet is observed to be more favorable than other alcohol molecules. The findings confirm that monolayer MoS_2 nanosheet can be used to detect the presence of alcohol vapors in the environment.

Electrical characteristics of multilayer MoS2 FET's with MoS2/graphene heterojunction contacts.

Science.gov (United States)

Kwak, Joon Young; Hwang, Jeonghyun; Calderon, Brian; Alsalman, Hussain; Munoz, Nini; Schutter, Brian; Spencer, Michael G

2014-08-13

The electrical properties of multilayer MoS2/graphene heterojunction transistors are investigated. Temperature-dependent I-V measurements indicate the concentration of unintentional donors in exfoliated MoS2 to be 3.57 × 10(11) cm(-2), while the ionized donor concentration is determined as 3.61 × 10(10) cm(-2). The temperature-dependent measurements also reveal two dominant donor levels, one at 0.27 eV below the conduction band and another located at 0.05 eV below the conduction band. The I-V characteristics are asymmetric with drain bias voltage and dependent on the junction used for the source or drain contact. I-V characteristics of the device are consistent with a long channel one-dimensional field-effect transistor model with Schottky contact. Utilizing devices, which have both graphene/MoS2 and Ti/MoS2 contacts, the Schottky barrier heights of both interfaces are measured. The charge transport mechanism in both junctions was determined to be either thermionic-field emission or field emission depending on bias voltage and temperature. On the basis of a thermionic field emission model, the barrier height at the graphene/MoS2 interface was determined to be 0.23 eV, while the barrier height at the Ti/MoS2 interface was 0.40 eV. The value of Ti/MoS2 barrier is higher than previously reported values, which did not include the effects of thermionic field emission.

Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots

Science.gov (United States)

Wang, Peng; Lin, Shisheng; Ding, Guqiao; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang

2016-04-01

We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells.

Wafer-scale synthesis of monolayer and few-layer MoS2 via thermal vapor sulfurization

Science.gov (United States)

Robertson, John; Liu, Xue; Yue, Chunlei; Escarra, Matthew; Wei, Jiang

2017-12-01

Monolayer molybdenum disulfide (MoS2) is an atomically thin, direct bandgap semiconductor crystal potentially capable of miniaturizing optoelectronic devices to an atomic scale. However, the development of 2D MoS2-based optoelectronic devices depends upon the existence of a high optical quality and large-area monolayer MoS2 synthesis technique. To address this need, we present a thermal vapor sulfurization (TVS) technique that uses powder MoS2 as a sulfur vapor source. The technique reduces and stabilizes the flow of sulfur vapor, enabling monolayer wafer-scale MoS2 growth. MoS2 thickness is also controlled with great precision; we demonstrate the ability to synthesize MoS2 sheets between 1 and 4 layers thick, while also showing the ability to create films with average thickness intermediate between integer layer numbers. The films exhibit wafer-scale coverage and uniformity, with electrical quality varying depending on the final thickness of the grown MoS2. The direct bandgap of grown monolayer MoS2 is analyzed using internal and external photoluminescence quantum efficiency. The photoluminescence quantum efficiency is shown to be competitive with untreated exfoliated MoS2 monolayer crystals. The ability to consistently grow wafer-scale monolayer MoS2 with high optical quality makes this technique a valuable tool for the development of 2D optoelectronic devices such as photovoltaics, detectors, and light emitters.

Synthesis of MoS2 and MoO2 for their applications in H2 generation and lithium ion batteries: a review

International Nuclear Information System (INIS)

Zhao Yufei; Zhang Yuxia; Yang Zhiyu; Yan Yiming; Sun Kening

2013-01-01

Scientists increasingly witness the applications of MoS 2 and MoO 2 in the field of energy conversion and energy storage. On the one hand, MoS 2 and MoO 2 have been widely utilized as promising catalysts for electrocatalytic or photocatalytic hydrogen evolution in aqueous solution. On the other hand, MoS 2 and MoO 2 have also been verified as efficient electrode material for lithium ion batteries. In this review, the synthesis, structure and properties of MoS 2 and MoO 2 are briefly summarized according to their applications for H 2 generation and lithium ion batteries. Firstly, we overview the recent advancements in the morphology control of MoS 2 and MoO 2 and their applications as electrocatalysts for hydrogen evolution reactions. Secondly, we focus on the photo-induced water splitting for H 2 generation, in which MoS 2 acts as an important co-catalyst when combined with other semiconductor catalysts. The newly reported research results of the significant functions of MoS 2 nanocomposites in photo-induced water splitting are presented. Thirdly, we introduce the advantages of MoS 2 and MoO 2 for their enhanced cyclic performance and high capacity as electrode materials of lithium ion batteries. Recent key achievements in MoS 2 - and MoO 2 -based lithium ion batteries are highlighted. Finally, we discuss the future scope and the important challenges emerging from these fascinating materials. (review)

Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors.

Science.gov (United States)

Arnold, Andrew J; Razavieh, Ali; Nasr, Joseph R; Schulman, Daniel S; Eichfeld, Chad M; Das, Saptarshi

2017-03-28

Neurotransmitter release in chemical synapses is fundamental to diverse brain functions such as motor action, learning, cognition, emotion, perception, and consciousness. Moreover, improper functioning or abnormal release of neurotransmitter is associated with numerous neurological disorders such as epilepsy, sclerosis, schizophrenia, Alzheimer's disease, and Parkinson's disease. We have utilized hysteresis engineering in a back-gated MoS 2 field effect transistor (FET) in order to mimic such neurotransmitter release dynamics in chemical synapses. All three essential features, i.e., quantal, stochastic, and excitatory or inhibitory nature of neurotransmitter release, were accurately captured in our experimental demonstration. We also mimicked an important phenomenon called long-term potentiation (LTP), which forms the basis of human memory. Finally, we demonstrated how to engineer the LTP time by operating the MoS 2 FET in different regimes. Our findings could provide a critical component toward the design of next-generation smart and intelligent human-like machines and human-machine interfaces.

Enhanced photoresponse characteristics of transistors using CVD-grown MoS2/WS2 heterostructures

Science.gov (United States)

Shan, Junjie; Li, Jinhua; Chu, Xueying; Xu, Mingze; Jin, Fangjun; Fang, Xuan; Wei, Zhipeng; Wang, Xiaohua

2018-06-01

Semiconductor heterostructures based on transition metal dichalcogenides provide a broad platform to research two-dimensional nanomaterials and design atomically thin devices for fundamental and applied interests. The MoS2/WS2 heterostructure was prepared on SiO2/Si substrate by chemical vapor deposition (CVD) in our research. And the optical properties of the heterostructure was characterized by Raman and photoluminescence (PL) spectroscopy. The similar 2 orders of magnitude decrease of PL intensity in MoS2/WS2 heterostructures was tested, which is attribute to the electrical and optical modulation effects are connected with the interfacial charge transfer between MoS2 and WS2 films. Using MoS2/WS2 heterostructure as channel material of the phototransistor, we demonstrated over 50 folds enhanced photoresponsivity of multilayer MoS2 field-effect transistor. The results indicate that the MoS2/WS2 films can be a promising heterostructure material to enhance the photoresponse characteristics of MoS2-based phototransistors.

Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well

KAUST Repository

Tangi, Malleswararao; Mishra, Pawan; Li, Ming-Yang; Shakfa, Mohammad Khaled; Anjum, Dalaver H.; Hedhili, Mohamed N.; Ng, Tien Khee; Li, Lain-Jong; Ooi, Boon S.

2017-01-01

matching with that of MoS2. We confirm that the grown MoS2 is a single layer from optical and structural analyses using micro-Raman spectroscopy and scanning transmission electron microscopy. The band offset parameters VBO and CBO at the In0.15Al0.85N/MoS2

The Positive Effects of Hydrophobic Fluoropolymers on the Electrical Properties of MoS2 Transistors

Directory of Open Access Journals (Sweden)

Somayyeh Rahimi

2016-08-01

Full Text Available We report the improvement of the electrical performance of field effect transistors (FETs fabricated on monolayer chemical vapor deposited (CVD MoS2, by applying an interacting fluoropolymer capping layer (Teflon-AF. The electrical characterizations of more than 60 FETs, after applying Teflon-AF cap, show significant improvement of the device properties and reduced device to device variation. The improvement includes: 50% reduction of the average gate hysteresis, 30% reduction of the subthreshold swing and about an order of magnitude increase of the current on-off ratio. These favorable changes in device performance are attributed to the reduced exposure of MoS2 channels to the adsorbates in the ambient which can be explained by the polar nature of Teflon-AF cap. A positive shift in the threshold voltage of all the measured FETs is observed, which translates to the more desirable enhancement mode transistor characteristics.

Biomining of MoS2 with Peptide-based Smart Biomaterials.

Science.gov (United States)

Cetinel, Sibel; Shen, Wei-Zheng; Aminpour, Maral; Bhomkar, Prasanna; Wang, Feng; Borujeny, Elham Rafie; Sharma, Kumakshi; Nayebi, Niloofar; Montemagno, Carlo

2018-02-20

Biomining of valuable metals using a target specific approach promises increased purification yields and decreased cost. Target specificity can be implemented with proteins/peptides, the biological molecules, responsible from various structural and functional pathways in living organisms by virtue of their specific recognition abilities towards both organic and inorganic materials. Phage display libraries are used to identify peptide biomolecules capable of specifically recognizing and binding organic/inorganic materials of interest with high affinities. Using combinatorial approaches, these molecular recognition elements can be converted into smart hybrid biomaterials and harnessed for biotechnological applications. Herein, we used a commercially available phage-display library to identify peptides with specific binding affinity to molybdenite (MoS 2 ) and used them to decorate magnetic NPs. These peptide-coupled NPs could capture MoS 2 under a variety of environmental conditions. The same batch of NPs could be re-used multiple times to harvest MoS 2 , clearly suggesting that this hybrid material was robust and recyclable. The advantages of this smart hybrid biomaterial with respect to its MoS 2 -binding specificity, robust performance under environmentally challenging conditions and its recyclability suggests its potential application in harvesting MoS 2 from tailing ponds and downstream mining processes.

Chemisorption-induced n-doping of MoS2 by oxygen

International Nuclear Information System (INIS)

Qi, Long; Wang, Ying; Wu, Yihong; Shen, Lei

2016-01-01

Both chemisorption and physisorption affect the electronic properties of two-dimensional materials, such as MoS 2 , but it remains a challenge to probe their respective roles experimentally. Through repeated in-situ electrical measurements of few-layer MoS 2 field-effect transistors in an ultrahigh vacuum system with well-controlled oxygen partial pressure (6 × 10 −8 mbar–3 × 10 −7 mbar), we were able to study the effect of chemisorption on surface defects separately from physically adsorbed oxygen molecules. It is found that chemisorption of oxygen results in n-doping in the channel but negligible effect on mobility and on/off ratio of the MoS 2 transistors. These results are in disagreement with the previous reports on p-doping and degradation of the device's performance when both chemisorption and physisorption are present. Through the analysis of adsorption-desorption kinetics and the first-principles calculations of electronic properties, we show that the experimentally observed n-doping effect originates from dissociative adsorption of oxygen at the surface defects of MoS 2 , which lowers the conduction band edge locally and makes the MoS 2 channel more n-type-like as compared to the as-fabricated devices

Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well

KAUST Repository

Tangi, Malleswarara

2017-08-31

The valence and conduction band offsets (VBO and CBO) at the semiconductor heterojunction are crucial parameters to design the active region of contemporary electronic and optoelectronic devices. In this report, to study the band alignment parameters at the In0.15Al0.85N/MoS2 lattice matched heterointerface, large area MoS2 single layers are chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N films and vice versa. We grew InAlN having an in-plane lattice parameter closely matching with that of MoS2. We confirm that the grown MoS2 is a single layer from optical and structural analyses using micro-Raman spectroscopy and scanning transmission electron microscopy. The band offset parameters VBO and CBO at the In0.15Al0.85N/MoS2 heterojunction are determined to be 2.08 ± 0.15 and 0.60 ± 0.15 eV, respectively, with type-I band alignment using high-resolution x-ray photoelectron spectroscopy in conjunction with ultraviolet photoelectron spectroscopy. Furthermore, we design a MoS2 quantum well structure by growing an In0.15Al0.85N layer on MoS2/In0.15Al0.85N type-I heterostructure. By reducing the nitrogen plasma power and flow rate for the overgrown In0.15Al0.85N layers, we achieve unaltered structural properties and a reasonable preservation of photoluminescence intensity with a peak width of 70 meV for MoS2 quantum well (QW). The investigation provides a pathway towards realizing large area, air-stable, lattice matched, and eventual high efficiency In0.15Al0.85N/MoS2/In0.15Al0.85N QW-based light emitting devices.

Capacitance-voltage characterization of fully silicided gated MOS capacitor

International Nuclear Information System (INIS)

Wang Baomin; Ru Guoping; Jiang Yulong; Qu Xinping; Li Bingzong; Liu Ran

2009-01-01

This paper investigates the capacitance-voltage (C-V) measurement on fully silicided (FUSI) gated metal-oxide-semiconductor (MOS) capacitors and the applicability of MOS capacitor models. When the oxide leakage current of an MOS capacitor is large, two-element parallel or series model cannot be used to obtain its real C-V characteristic. A three-element model simultaneously consisting of parallel conductance and series resistance or a four-element model with further consideration of a series inductance should be used. We employed the three-element and the four-element models with the help of two-frequency technique to measure the Ni FUSI gated MOS capacitors. The results indicate that the capacitance of the MOS capacitors extracted by the three-element model still shows some frequency dispersion, while that extracted by the four-element model is close to the real capacitance, showing little frequency dispersion. The obtained capacitance can be used to calculate the dielectric thickness with quantum effect correction by NCSU C-V program. We also investigated the influence of MOS capacitor's area on the measurement accuracy. The results indicate that the decrease of capacitor area can reduce the dissipation factor and improve the measurement accuracy. As a result, the frequency dispersion of the measured capacitance is significantly reduced, and real C-V characteristic can be obtained directly by the series model. In addition, this paper investigates the quasi-static C-V measurement and the photonic high-frequency C-V measurement on Ni FUSI metal gated MOS capacitor with a thin leaky oxide. The results indicate that the large tunneling current through the gate oxide significantly perturbs the accurate measurement of the displacement current, which is essential for the quasi-static C-V measurement. On the other hand, the photonic high-frequency C-V measurement can bypass the leakage problem, and get reliable low-frequency C-V characteristic, which can be used to

The effects of gate oxide thickness on radiation damage in MOS system

International Nuclear Information System (INIS)

Zhu Hui; Yan Rongliang; Wang Yu; He Jinming

1988-01-01

The dependences of the flatband voltage shift (ΔV FB ) and the threshold voltage shift (ΔV TH ) in MOS system on the oxide thickness (T ox ) and on total irradiated dose (D) of electron-beam and 60 Co γ-ray have been studied. It has been found that ΔV FB ∝ T ox 3 , with +10V of gate bias during irradiation for n-Si substrate MOS capacitors; ΔV TH ∝ T ox 3 D 2/3 , with 'on' gate bias during irradiation for n- and P-channel MOS transistors; ΔV TP ∝ T ox 2 D 2/3 , with 'off' gate bias during irradiation for P-channel MOS transistors. These results are explained by Viswanathan model. According to ∼T ox 3 dependence, the optimization of radiation hardening process for MOS system is also simply discussed

MoS2 Negative-Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit.

Science.gov (United States)

Liu, Xingqiang; Liang, Renrong; Gao, Guoyun; Pan, Caofeng; Jiang, Chunsheng; Xu, Qian; Luo, Jun; Zou, Xuming; Yang, Zhenyu; Liao, Lei; Wang, Zhong Lin

2018-05-21

The Boltzmann distribution of electrons induced fundamental barrier prevents subthreshold swing (SS) from less than 60 mV dec -1 at room temperature, leading to high energy consumption of MOSFETs. Herein, it is demonstrated that an aggressive introduction of the negative capacitance (NC) effect of ferroelectrics can decisively break the fundamental limit governed by the "Boltzmann tyranny". Such MoS 2 negative-capacitance field-effect transistors (NC-FETs) with self-aligned top-gated geometry demonstrated here pull down the SS value to 42.5 mV dec -1 , and simultaneously achieve superior performance of a transconductance of 45.5 μS μm and an on/off ratio of 4 × 10 6 with channel length less than 100 nm. Furthermore, the inserted HfO 2 layer not only realizes a stable NC gate stack structure, but also prevents the ferroelectric P(VDF-TrFE) from fatigue with robust stability. Notably, the fabricated MoS 2 NC-FETs are distinctly different from traditional MOSFETs. The on-state current increases as the temperature decreases even down to 20 K, and the SS values exhibit nonlinear dependence with temperature due to the implementation of the ferroelectric gate stack. The NC-FETs enable fundamental applications through overcoming the Boltzmann limit in nanoelectronics and open up an avenue to low-power transistors needed for many exciting long-endurance portable consumer products. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Operation mode switchable charge-trap memory based on few-layer MoS2

Science.gov (United States)

Hou, Xiang; Yan, Xiao; Liu, Chunsen; Ding, Shijin; Zhang, David Wei; Zhou, Peng

2018-03-01

Ultrathin layered two-dimensional (2D) semiconductors like MoS2 and WSe2 have received a lot of attention because of their excellent electrical properties and potential applications in electronic devices. We demonstrate a charge-trap memory with two different tunable operation modes based on a few-layer MoS2 channel and an Al2O3/HfO2/Al2O3 charge storage stack. Our device shows excellent memory properties under the traditional three-terminal operation mode. More importantly, unlike conventional charge-trap devices, this device can also realize the memory performance with just two terminals (drain and source) because of the unique atomic crystal electrical characteristics. Under the two-terminal operation mode, the erase/program current ratio can reach up to 104 with a stable retention property. Our study indicates that the conventional charge-trap memory cell can also realize the memory performance without the gate terminal based on novel two dimensional materials, which is meaningful for low power consumption and high integration density applications.

Unravelling merging behaviors and electrostatic properties of CVD-grown monolayer MoS2 domains

International Nuclear Information System (INIS)

Hao, Song; Yang, Bingchu; Gao, Yongli

2016-01-01

The presence of grain boundaries is inevitable for chemical vapor deposition (CVD)-grown MoS 2 domains owing to various merging behaviors, which greatly limits its potential applications in novel electronic and optoelectronic devices. It is therefore of great significance to unravel the merging behaviors of the synthesized polygon shape MoS 2 domains. Here we provide systematic investigations of merging behaviors and electrostatic properties of CVD-grown polycrystalline MoS 2 crystals by multiple means. Morphological results exhibit various polygon shape features, ascribed to polycrystalline crystals merged with triangle shape MoS 2 single crystals. The thickness of triangle and polygon shape MoS 2 crystals is identical manifested by Raman intensity and peak position mappings. Three merging behaviors are proposed to illustrate the formation mechanisms of observed various polygon shaped MoS 2 crystals. The combined photoemission electron microscopy and kelvin probe force microscopy results reveal that the surface potential of perfect merged crystals is identical, which has an important implication for fabricating MoS 2 -based devices.

Photoresponse properties of large area MoS2 metal–semiconductor–metal photodetectors

Science.gov (United States)

Ko, Tsung-Shine; Huang, Yu-Jen; Lin, Der-Yuh; Lin, Chia-Feng; Hong, Bo-Syun; Chen, Hone-Zern

2018-04-01

In this study, a large-area molybdenum disulfide (MoS2) thin film was obtained by low pressure thermal sulfurization. Raman scattering spectrum shows that the peaks at 374 and 403 cm‑1 are from the MoS2 thin film. XRD result reveals peaks at 33 and 58.5° indicating MoS2(100) and (110) crystal planes. By using gold (Au), silver (Ag), and aluminum (Al) as contact materials on the MoS2 thin film, photoresponsivity results indicate that Ag is a suitable material for obtaining a high responsivity for a high-performance photodetector (PD). Photocurrent mapping measurements also reveal that Ag contacts have the best carrier transport characteristic with carrier diffusion length of 101 µm among these contacts. Furthermore, we investigated metal–semiconductor–metal MoS2 thin film PDs with interdigitated fingers of 300, 400, 500, and 600 µm contact widths, which showed that the large contact widths could produce a high photoresponse for PD application owing to low resistance.

Edge termination of MoS2 and CoMoS catalyst particles

DEFF Research Database (Denmark)

Byskov, Line Sjolte; Nørskov, Jens Kehlet; Clausen, B. S.

2000-01-01

The edge termination of MoS2 and CoMoS catalyst particles is studied by density functional calculations. We show that for structures without vacancies Mo-terminated edges have the lowest edge energies. Creation of vacancies, which are believed to be active sites in these catalyst systems, leads...

Synthesis of coaxial nanotubes of MoS2 and carbon

International Nuclear Information System (INIS)

Reza, C.; Perez, M.; Santiago, P.

2002-01-01

The di chalcogenides WS 2 and MoS 2 by their tubular properties were combined. It was synthesized coaxial structures of MoS 2 with C with the purpose to studying the possible structural changes of the MoS 2 nano tubes at was submitted to a propylene gas flux as carbon precursor in a thermal treatment. Studies of structural characterization by Transmission Electron Microscopy (Tem) were realized. The theoretical simulation of the structure was realized using an algorithm type multilayer. The possibility of the nano tubes are applied to gas storage as can be the hydrogen arouse interest by the energy production. (Author)

Effect of MoS2 on hydrogenation storage properties of LiBH4

International Nuclear Information System (INIS)

Liang, Dan; Han, Shumin; Wang, Jiasheng; Zhang, Wei; Zhao, Xin; Zhao, Ziyang

2014-01-01

The hydrogen storage properties of LiBH 4 ball milled with 20 wt% MoS 2 have been investigated. It shows that the LiBH 4 doped with MoS 2 exhibits favorable hydrogenation and dehydrogenation properties in terms of decomposition temperature and hydriding/dehydriding reversibility. The sample with MoS 2 starts to release hydrogen at 230 °C and has a decrease of 80 °C in contrast with pristine LiBH 4 . Furthermore, for the second cycle, the LiBH 4 with MoS 2 maintains a reversible hydrogen storage capacity of about 8.0 wt% which is almost identical with the first cycle under 5 MPa at 550 °C. Analyzed by the XRD and the FTIR results, LiBH 4 can be regenerated after re-hydrogenation under a relatively mild condition by adding MoS 2 . The improvement of the hydrogenation and dehydrogenation properties mainly results from the formation of Li 2 S and MoB 2 during ball milling. -- Graphical abstract: Hydrogen absorption curves of LiBH 4 doped with MoS 2 for five cycles at 400 °C. Highlights: • The hydrogen absorption capacity is nearly the same for 5 cycles at 400 °C. • The sample with MoS 2 starts to release hydrogen at 230 °C. • The coexistence of MoB 2 and Li 2 S catalyzes the decomposition of LiBH 4

MoS2 solid-lubricating film fabricated by atomic layer deposition on Si substrate

Science.gov (United States)

Huang, Yazhou; Liu, Lei; Lv, Jun; Yang, Junjie; Sha, Jingjie; Chen, Yunfei

2018-04-01

How to reduce friction for improving efficiency in the usage of energy is a constant challenge. Layered material like MoS2 has long been recognized as an effective surface lubricant. Due to low interfacial shear strengths, MoS2 is endowed with nominal frictional coefficient. In this work, MoS2 solid-lubricating film was directly grown by atomic layer deposition (ALD) on Si substrate using MoCl5 and H2S. Various methods were used to observe the grown MoS2 film. Moreover, nanotribological properties of the film were observed by an atomic force microscope (AFM). Results show that MoS2 film can effectively reduce the friction force by about 30-45% under different loads, indicating the huge application value of the film as a solid lubricant. Besides the interlayer-interfaces-sliding, the smaller capillary is another reason why the grown MoS2 film has smaller friction force than that of Si.

Atomic-scale structure of single-layer MoS2 nanoclusters

DEFF Research Database (Denmark)

Helveg, S.; Lauritsen, J. V.; Lægsgaard, E.

2000-01-01

We have studied using scanning tunneling microscopy (STM) the atomic-scale realm of molybdenum disulfide (MoS2) nanoclusters, which are of interest as a model system in hydrodesulfurization catalysis. The STM gives the first real space images of the shape and edge structure of single-layer MoS2...

Band structural properties of MoS2 (molybdenite)

International Nuclear Information System (INIS)

Gupta, V.P.

1980-01-01

Semiconductivity and superconductivity in MoS 2 (molybdenite) can be understood in terms of the band structure of MoS 2 . The band structural properties of MoS 2 are presented here. The energy dependence of nsub(eff) and epsilon(infinity)sub(eff) is investigated. Using calculated values of nsub(eff) and epsilon(infinity)sub(eff), the Penn gap has been determined. The value thus obtained is shown to be in good agreement with the reflectivity data and also with the value obtained from the band structure. The Ravindra and Srivastava formula has been shown to give values for the isobaric temperature gradient of Esub(G)[(deltaEsub(G)/deltaT)sub(P)], which are in agreement with the experimental data, and the contribution to (deltaEsub(G)/deltaT)sub(P) due to the electron lattice interaction has been evaluated. In addition, the electronic polarizability has been calculated using a modified Lorentz-Lorenz relation. (author)

Thermal conductivity of bulk and monolayer MoS2

KAUST Repository

Gandi, Appala

2016-02-26

© Copyright EPLA, 2016. We show that the lattice contribution to the thermal conductivity of MoS2 strongly dominates the carrier contribution in a broad temperature range from 300 to 800 K. Since theoretical insight into the lattice contribution is largely missing, though it would be essential for materials design, we solve the Boltzmann transport equation for the phonons self-consistently in order to evaluate the phonon lifetimes. In addition, the length scale for transition between diffusive and ballistic transport is determined. The low out-of-plane thermal conductivity of bulk MoS2 (2.3 Wm-1K-1 at 300 K) is useful for thermoelectric applications. On the other hand, the thermal conductivity of monolayer MoS2 (131 Wm-1K-1 at 300 K) is comparable to that of Si.

Construction of MoS2/Si nanowire array heterojunction for ultrahigh-sensitivity gas sensor

Science.gov (United States)

Wu, Di; Lou, Zhenhua; Wang, Yuange; Xu, Tingting; Shi, Zhifeng; Xu, Junmin; Tian, Yongtao; Li, Xinjian

2017-10-01

Few-layer MoS2 thin films were synthesized by a two-step thermal decomposition process. In addition, MoS2/Si nanowire array (SiNWA) heterojunctions exhibiting excellent gas sensing properties were constructed and investigated. Further analysis reveals that such MoS2/SiNWA heterojunction devices are highly sensitive to nitric oxide (NO) gas under reverse voltages at room temperature (RT). The gas sensor demonstrated a minimum detection limit of 10 ppb, which represents the lowest value obtained for MoS2-based sensors, as well as an ultrahigh response of 3518% (50 ppm NO, ˜50% RH), with good repeatability and selectivity of the MoS2/SiNWA heterojunction. The sensing mechanisms were also discussed. The performance of the MoS2/SiNWA heterojunction gas sensors is superior to previous results, revealing that they have great potential in applications relating to highly sensitive gas sensors.

Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

Directory of Open Access Journals (Sweden)

Filippo Giannazzo

2017-01-01

Full Text Available Molybdenum disulphide (MoS2 is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET applications. In this context, the contact resistance, RC, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ and the threshold voltage (Vth. This paper reports a detailed electrical characterization of back-gated multilayer MoS2 transistors with Ni source/drain contacts at temperatures from T = 298 to 373 K, i.e., the expected range for transistor operation in circuits/systems, considering heating effects due to inefficient power dissipation. From the analysis of the transfer characteristics (ID−VG in the subthreshold regime, the Schottky barrier height (ΦB ≈ 0.18 eV associated with the Ni/MoS2 contact was evaluated. The resulting contact resistance in the on-state (electron accumulation in the channel was also determined and it was found to increase with T as RC proportional to T3.1. The contribution of RC to the extraction of μ and Vth was evaluated, showing a more than 10% underestimation of μ when the effect of RC is neglected, whereas the effect on Vth is less significant. The temperature dependence of μ and Vth was also investigated. A decrease of μ proportional to 1/Tα with α = 1.4 ± 0.3 was found, indicating scattering by optical phonons as the main limiting mechanism for mobility above room temperature. The value of Vth showed a large negative shift (about 6 V increasing the temperature from 298 to 373 K, which was explained in terms of electron

Controlled p-doping of black phosphorus by integration of MoS2 nanoparticles

Science.gov (United States)

Jeon, Sumin; Kim, Minwoo; Jia, Jingyuan; Park, Jin-Hong; Lee, Sungjoo; Song, Young Jae

2018-05-01

Black phosphorus (BP), a new family of two dimensional (2D) layered materials, is an attractive material for future electronic, photonic and chemical sensing devices, thanks to its high carrier density and a direct bandgap of 0.3-2.0 eV, depending on the number of layers. Controllability over the properties of BP by electrical or chemical modulations is one of the critical requirements for future various device applications. Herein, we report a new doping method of BP by integration of density-controlled monolayer MoS2 nanoparticles (NPs). MoS2 NPs with different density were synthesized by chemical vapor deposition (CVD) and transferred onto a few-layer BP channel, which induced a p-doping effect. Scanning electron microscopy (SEM) confirmed the size and distribution of MoS2 NPs with different density. Raman and X-ray photoelectron spectroscopy (XPS) were measured to confirm the oxidation on the edge of MoS2 NPs and a doping effect of MoS2 NPs on a BP channel. The doping mechanism was explained by a charge transfer by work function differences between BP and MoS2 NPs, which was confirmed by Kelvin probe force microscopy (KPFM) and electrical measurements. The hole concentration of BP was controlled with different densities of MoS2 NPs in a range of 1012-1013 cm-2.

Analysis of optical and electronic properties of MoS2 for optoelectronics and FET applications

Science.gov (United States)

Ullah, Muhammad S.; Yousuf, Abdul Hamid Bin; Es-Sakhi, Azzedin D.; Chowdhury, Masud H.

2018-04-01

Molybdenum disulfide (MoS2) is considered as a promising alternative to conventional semiconductor materials that used in the IC industry because of its novel properties. In this paper, we explore the optical and electronic properties of MoS2 for photodetector and transistors applications. This simulation is done using `DFT materials properties simulator'. Our findings show that mono- and multi-layer MoS2 is suitable for conventional and tunnel FET applications due to direct and indirect band-gap respectively. The bulk MoS2 crystal, which are composed of stacked layers have indirect bandgap and mono-layer MoS2 crystal form direct bandgap at the K-point of Brillouin zone. Indirect bandgap of bulk MoS2 crystal implies that phonons need to be involved in band-to-band tunneling (BTBT) process. Degenerately doped semiconductor, which is basically spinning the Fermi level, changing the DOS profile, and thinning the indirect bandgap that allow tunneling from valence band to conduction band. The optical properties of MoS2 is explored in terms of Absorption coefficient, extinction coefficient and refractive index. Our results shows that a MoS2 based photodetector can be fabricate to detect light in the visible range (below 500nm). It is also observed that the MoS2 is most sensitive for the light of wavelength 450nm.

Conduction quantization in monolayer MoS2

Science.gov (United States)

Li, T. S.

2016-10-01

We study the ballistic conduction of a monolayer MoS2 subject to a spatially modulated magnetic field by using the Landauer-Buttiker formalism. The band structure depends sensitively on the field strength, and its change has profound influence on the electron conduction. The conductance is found to demonstrate multi-step behavior due to the discrete number of conduction channels. The sharp peak and rectangular structures of the conductance are stretched out as temperature increases, due to the thermal broadening of the derivative of the Fermi-Dirac distribution function. Finally, quantum behavior in the conductance of MoS2 can be observed at temperatures below 10 K.

Metallization and superconductivity in Ca-intercalated bilayer MoS2

Science.gov (United States)

Szczȱśniak, R.; Durajski, A. P.; Jarosik, M. W.

2017-12-01

A two-dimensional molybdenum disulfide (MoS2) has attracted significant interest recently due to its outstanding physical, chemical and optoelectronic properties. In this paper, using the first-principles calculations, the dynamical stability, electronic structure and superconducting properties of Ca-intercalated bilayer MoS2 are investigated. The calculated electron-phonon coupling constant implies that the stable form of investigated system is a strong-coupling superconductor (λ = 1.05) with a low value of critical temperature (TC = 13.3 K). Moreover, results obtained within the framework of the isotropic Migdal-Eliashberg formalism proved that Ca-intercalated bilayer MoS2 exhibits behavior that goes beyond the scope of the conventional BCS theory.

Three-Dimensional Heterostructures of MoS 2 Nanosheets on Conducting MoO 2 as an Efficient Electrocatalyst To Enhance Hydrogen Evolution Reaction

KAUST Repository

Nikam, Revannath Dnyandeo

2015-10-05

Molybdenum disulfide (MoS) is a promising catalyst for hydrogen evolution reaction (HER) because of its unique nature to supply active sites in the reaction. However, the low density of active sites and their poor electrical conductivity have limited the performance of MoS in HER. In this work, we synthesized MoS nanosheets on three-dimensional (3D) conductive MoO via a two-step chemical vapor deposition (CVD) reaction. The 3D MoO structure can create structural disorders in MoS nanosheets (referred to as 3D MoS/MoO), which are responsible for providing the superior HER activity by exposing tremendous active sites of terminal disulfur of S2 (in MoS) as well as the backbone conductive oxide layer (of MoO) to facilitate an interfacial charge transport for the proton reduction. In addition, the MoS nanosheets could protect the inner MoO core from the acidic electrolyte in the HER. The high activity of the as-synthesized 3D MoS/MoO hybrid material in HER is attributed to the small onset overpotential of 142 mV, a largest cathodic current density of 85 mA cm, a low Tafel slope of 35.6 mV dec, and robust electrochemical durability.

Three-Dimensional Heterostructures of MoS 2 Nanosheets on Conducting MoO 2 as an Efficient Electrocatalyst To Enhance Hydrogen Evolution Reaction

KAUST Repository

Nikam, Revannath Dnyandeo; Lu, Ang-Yu; Sonawane, Poonam Ashok; Kumar, U. Rajesh; Yadav, Kanchan; Li, Lain-Jong; Chen, Yit Tsong

2015-01-01

Molybdenum disulfide (MoS) is a promising catalyst for hydrogen evolution reaction (HER) because of its unique nature to supply active sites in the reaction. However, the low density of active sites and their poor electrical conductivity have limited the performance of MoS in HER. In this work, we synthesized MoS nanosheets on three-dimensional (3D) conductive MoO via a two-step chemical vapor deposition (CVD) reaction. The 3D MoO structure can create structural disorders in MoS nanosheets (referred to as 3D MoS/MoO), which are responsible for providing the superior HER activity by exposing tremendous active sites of terminal disulfur of S2 (in MoS) as well as the backbone conductive oxide layer (of MoO) to facilitate an interfacial charge transport for the proton reduction. In addition, the MoS nanosheets could protect the inner MoO core from the acidic electrolyte in the HER. The high activity of the as-synthesized 3D MoS/MoO hybrid material in HER is attributed to the small onset overpotential of 142 mV, a largest cathodic current density of 85 mA cm, a low Tafel slope of 35.6 mV dec, and robust electrochemical durability.

Anti-site defected MoS2 sheet-based single electron transistor as a gas sensor

Science.gov (United States)

Sharma, Archana; Husain, Mushahid; Srivastava, Anurag; Khan, Mohd. Shahid

2018-05-01

To prevent harmful and poisonous CO gas molecules, catalysts are needed for converting them into benign substances. Density functional theory (DFT) calculations have been used to study the adsorption of CO and CO2 gas molecules on the surface of MoS2 monolayer with Mo atom embedded at S-vacancy site (MoS). The strong interaction between Mo metal with pristine MoS2 sheet suggests its strong binding nature. Doping Mo into MoS2 sheet enhances CO and CO2 adsorption strength. The sensing response of MoS-doped MoS2 system to CO and CO2 gas molecules is obtained in the single electron transistor (SET) environment by varying bias voltage. Doping reduces charging energy of the device which results in fast switching of the device from OFF to ON state.

Tunneling in BP-MoS2 heterostructure

Science.gov (United States)

Liu, Xiaochi; Qu, Deshun; Kim, Changsik; Ahmed, Faisal; Yoo, Won Jong

Tunnel field effect transistor (TFET) is considered to be a leading option for achieving SS mV/dec. In this work, black phosphorus (BP) and molybdenum disulfide (MoS2) heterojunction devices are fabricated. We find that thin BP flake and MoS2 form normal p-n junctions, tunneling phenomena can be observed when BP thickness increases to certain level. PEO:CsClO4 is applied on the surface of the device together with a side gate electrode patterned together with source and drain electrodes. The Fermi level of MoS2 on top of BP layer can be modulated by the side gating, and this enables to vary the MoS2-BP tunnel diode property from off-state to on-state. Since tunneling is the working mechanism of MoS2-BP junction, and PEO:CsClO4\\ possesses ultra high dielectric constant and small equivalent oxide thickness (EOT), a low SS of 55 mV/dec is obtained from MoS2-BP TFET. This work was supported by the Global Research Laboratory and Global Frontier R&D Programs at the Center for Hybrid Interface Materials, both funded by the Ministry of Science, ICT & Future Planning via the National Research Foundation of Korea (NRF).

High performance MoS2 TFT using graphene contact first process

Directory of Open Access Journals (Sweden)

Chih-Shiang Chang Chien

2017-08-01

Full Text Available An ohmic contact of graphene/MoS2 heterostructure is determined by using ultraviolet photoelectron spectroscopy (UPS. Since graphene shows a great potential to replace metal contact, a direct comparison of Cr/Au contact and graphene contact on the MoS2 thin film transistor (TFT is made. Different from metal contacts, the work function of graphene can be modulated. As a result, the subthreshold swing can be improved. And when VgMoS2 TFT, a new method using graphene contact first and MoS2 layer last process that can avoid PMMA residue and high processing temperature is applied. MoS2 TFT using this method shows on/off current ratio up to 6×106 order of magnitude, high mobility of 116 cm2/V-sec, and subthreshold swing of only 0.515 V/dec.

Edge-spin-derived magnetism in few-layer MoS2 nanomeshes

Directory of Open Access Journals (Sweden)

G. Kondo

2017-12-01

Full Text Available Magnetism arising from edge spins is highly interesting, particularly in 2D atomically thin materials in which the influence of edges becomes more significant. Among such materials, molybdenum disulfide (MoS2; one of the transition metal dichalcogenide (TMD family is attracting significant attention. The causes for magnetism observed in the TMD family, including in MoS2, have been discussed by considering various aspects, such as pure zigzag atomic-structure edges, grain boundaries, and vacancies. Here, we report the observation of ferromagnetism (FM in few-layer MoS2 nanomeshes (NMs; honeycomb-like array of hexagonal nanopores with low-contamination and low-defect pore edges, which have been created by a specific non-lithographic method. We confirm robust FM arising from pore edges in oxygen(O-terminated MoS2-NMs at room temperature, while it disappears in hydrogen(H-terminated samples. The observed high-sensitivity of FM to NM structures and critical annealing temperatures suggest a possibility that the Mo-atom dangling bond in pore edge is a dominant factor for the FM.

Magnetic MoS2 on multiwalled carbon nanotubes for sulfide sensing.

Science.gov (United States)

Li, Chunxiang; Zhang, Dan; Wang, Jiankang; Hu, Pingan; Jiang, Zhaohua

2017-07-04

A novel hybrid metallic cobalt insided in multiwalled carbon nanotubles/molybdenum disulfide (Co@CNT/MoS 2 ) modified glass carbon electrode (GCE) was fabricated with a adhesive of Nafion suspension and used as chemical sensors for sulfide detection. Single-layered MoS 2 was coated on CNTs through magnetic traction force between paramagnetic monolayer MoS 2 and Co particles in CNTs. Co particles faciliated the collection of paramagnetic monolayer MoS 2 exfoliated from bulk MoS 2 in solution. Amperometric analysis, cycle voltammetry, cathodic stripping analysis and linear sweep voltammetry results showed the Co@CNT/MoS 2 modified GCE exhibited excellent electrochemical activity to sulfide in buffer solutions, but amperometric analysis was found to be more sensitive than the other methods. The amperometric response result indicated the Co@CNT/MoS 2 -modified GCE electrode was an excellent electrochemical sensor for detecting S 2- with a detection limit of 7.6 nM and sensitivity of 0.23 mA/μM. The proposed electrode was used for the determination of sulfide levels in hydrogen sulfide-pretreated fruits, and the method was also verified with recovery studies. Copyright © 2017 Elsevier B.V. All rights reserved.

Layer-by-Layer Hybrids of MoS2 and Reduced Graphene Oxide for Lithium Ion Batteries

International Nuclear Information System (INIS)

Jing, Yu; Ortiz-Quiles, Edwin O.; Cabrera, Carlos R.; Chen, Zhongfang; Zhou, Zhen

2014-01-01

Highlights: • Layer-by-layer MoS 2 /rGO hybrids were prepared by rGO involved lithiation-exfoliation method. • This hybrid exhibited enhanced electrochemical performances due to the existence of rGO. • The roles of rGO in different charging/discharging processes were interpreted by computations. - Abstract: Two-dimensional MoS 2 shows great potential for effective Li storage due to its good thermal and chemical stability, high theoretical capacity, and experimental accessibility. However, the poor electrical conductivity and the restacking tendency significantly restrict its applications to lithium ion batteries (LIBs). To overcome these problems, we introduced reduced graphene oxides (rGO) to the intercalation-exfoliation preparation process of few-layered MoS 2 and obtained layer-by-layer MoS 2 /rGO hybrids. With the addition of rGO, the restacking of MoS 2 layers was apparently inhibited, and MoS 2 with 1 ∼ 3 layers was obtained in the composite. Due to the positive role of rGO, MoS 2 /rGO hybrids exhibited highly enhanced cyclic stability and high-rate performances as LIB anodes in comparison with bare MoS 2 layers or bulk MoS 2 . Moreover, the experimental results were well interpreted through density functional theory computations

Interlocking Friction Governs the Mechanical Fracture of Bilayer MoS2.

Science.gov (United States)

Jung, Gang Seob; Wang, Shanshan; Qin, Zhao; Martin-Martinez, Francisco J; Warner, Jamie H; Buehler, Markus J

2018-04-24

A molybdenum disulfide (MoS 2 ) layered system is a two-dimensional (2D) material, which is expected to provide the next generation of electronic devices together with graphene and other 2D materials. Due to its significance for future electronics applications, gaining a deep insight into the fundamental mechanisms upon MoS 2 fracture is crucial to prevent mechanical failure toward reliable applications. Here, we report direct experimental observation and atomic modeling of the complex failure behaviors of bilayer MoS 2 originating from highly variable interlayer frictions, elucidated with in situ transmission electron microscopy and large-scale reactive molecular dynamics simulations. Our results provide a systematic understanding of the effects that different stacking and loading conditions have on the failure mechanisms and crack-tip behaviors in the bilayer MoS 2 systems. Our findings unveil essential properties in fracture of this 2D material and provide mechanistic insight into its mechanical failure.

Anisotropic MoS2 Nanosheets Grown on Self-Organized Nanopatterned Substrates.

Science.gov (United States)

Martella, Christian; Mennucci, Carlo; Cinquanta, Eugenio; Lamperti, Alessio; Cappelluti, Emmanuele; Buatier de Mongeot, Francesco; Molle, Alessandro

2017-05-01

Manipulating the anisotropy in 2D nanosheets is a promising way to tune or trigger functional properties at the nanoscale. Here, a novel approach is presented to introduce a one-directional anisotropy in MoS 2 nanosheets via chemical vapor deposition (CVD) onto rippled patterns prepared on ion-sputtered SiO 2 /Si substrates. The optoelectronic properties of MoS 2 are dramatically affected by the rippled MoS 2 morphology both at the macro- and the nanoscale. In particular, strongly anisotropic phonon modes are observed depending on the polarization orientation with respect to the ripple axis. Moreover, the rippled morphology induces localization of strain and charge doping at the nanoscale, thus causing substantial redshifts of the phonon mode frequencies and a topography-dependent modulation of the MoS 2 workfunction, respectively. This study paves the way to a controllable tuning of the anisotropy via substrate pattern engineering in CVD-grown 2D nanosheets. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Stable MoS2 Field-Effect Transistors Using TiO2 Interfacial Layer at Metal/MoS2 Contact

KAUST Repository

Park, Woojin

2017-09-07

Molybdenum disulphide (MoS2) is an emerging 2-dimensional (2D) semiconductor for electronic devices. However, unstable and low performance of MoS2 FETs is an important concern. In this study, inserting an atomic layer deposition (ALD) titanium dioxide (TiO2) interfacial layer between contact metal and MoS2 channel is suggested to achieve more stable performances. The reduced threshold voltage (VTH) shift and reduced series resistance (RSD) were simultaneously achieved.

Doping effect on monolayer MoS2 for visible light dye degradation - A DFT study

Science.gov (United States)

Cheriyan, Silpa; Balamurgan, D.; Sriram, S.

2018-04-01

The electronic and optical properties of, Nitrogen (N), Cobalt (Co), and Co-N co-doped monolayers of MoS2 has been studied by using density functional theory (DFT) for visible light photocatalytic activity. From the calculations, it has been observed that the band gap of monolayer MoS2 has been reduced while doping. However, the band gaps of pristine and N doped MoS2 monolayers only falls in the visible region while for Co and Co-N co-doped systems, the band gap shifted to IR region. The optical calculation also confirms the results. The formation energy values of the doped system reaveal that MoS2 monolayer drops its stability while doping. To evaluate the photocatalytic response, band edge potentials of pristine and N-MoS2 are calculated, and the observed results show that compared to N-doped MoS2 monolayer, pure MoS2 is highly suitable for visible light photocatalytic dye degradation.

Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films.

Science.gov (United States)

Vangelista, Silvia; Cinquanta, Eugenio; Martella, Christian; Alia, Mario; Longo, Massimo; Lamperti, Alessio; Mantovan, Roberto; Basset, Francesco Basso; Pezzoli, Fabio; Molle, Alessandro

2016-04-29

Large-scale integration of MoS2 in electronic devices requires the development of reliable and cost-effective deposition processes, leading to uniform MoS2 layers on a wafer scale. Here we report on the detailed study of the heterogeneous vapor-solid reaction between a pre-deposited molybdenum solid film and sulfur vapor, thus resulting in a controlled growth of MoS2 films onto SiO2/Si substrates with a tunable thickness and cm(2)-scale uniformity. Based on Raman spectroscopy and photoluminescence, we show that the degree of crystallinity in the MoS2 layers is dictated by the deposition temperature and thickness. In particular, the MoS2 structural disorder observed at low temperature (<750 °C) and low thickness (two layers) evolves to a more ordered crystalline structure at high temperature (1000 °C) and high thickness (four layers). From an atomic force microscopy investigation prior to and after sulfurization, this parametrical dependence is associated with the inherent granularity of the MoS2 nanosheet that is inherited by the pristine morphology of the pre-deposited Mo film. This work paves the way to a closer control of the synthesis of wafer-scale and atomically thin MoS2, potentially extendable to other transition metal dichalcogenides and hence targeting massive and high-volume production for electronic device manufacturing.

Investigation on nonlinear optical properties of MoS2 nanoflake, grown on silicon and quartz substrates

Science.gov (United States)

Bayesteh, S.; Mortazavi, S. Z.; Reyhani, A.

2018-03-01

In this study, MoS2 was directly synthesized by one-step thermal chemical vapour deposition (TCVD), on different substrates including Si/SiO2 and quartz, using MoO3 and sulfide powders as precursor. The XRD patterns demonstrate the high crystallinity of MoS2 on Si/SiO2 and quartz substrates. SEM confirmed the formation of MoS2 grown on both substrates. According to line width and frequency difference between the E1 2g and A1g in Raman spectroscopy, it is inferred that the MoS2 grown on Si/SiO2 substrate is monolayer and the MoS2 grown on quartz substrate is multilayer. Moreover, by assessment of MoS2 nanoflake band gap via UV-visible analysis, it verified the formation of few layer structures. In addition, the open-aperture and close-aperture Z-scan techniques were employed to study the nonlinear optical properties including nonlinear absorption and nonlinear refraction of the synthesized MoS2. All experiments were performed using a diode laser with a wavelength of 532 nm as light source. The monolayer MoS2 synthesized on Si/SiO2, display considerable two-photon absorption. However, the multilayer MoS2 synthesized on quartz displayed saturable absorption (SA). It is noticeable that both samples demonstrate obvious self-defocusing behaviour.

Preparation of nanostructured and nanosheets of MoS2 oxide using oxidation method.

Science.gov (United States)

Amini, Majed; Ramazani S A, Ahmad; Faghihi, Morteza; Fattahpour, Seyyedfaridoddin

2017-11-01

Molybdenum disulfide (MoS 2 ), a two-dimensional transition metal has a 2D layered structure and has recently attracted attention due to its novel catalytic properties. In this study, MoS 2 has been successfully intercalated using chemical and physical intercalation techniques, while enhancing its surface properties. The final intercalated MoS 2 is of many interests because of its low-dimensional and potential properties in in-situ catalysis. In this research, we report different methods to intercalate the layers of MoS 2 successfully using acid-treatment, ultrasonication, oxidation and thermal shocking. The other goal of this study is to form SO bonds mainly because of expected enhanced in-situ catalytic operations. The intercalated MoS 2 is further characterized using analyses such as Fourier Transform Infrared Spectroscopy (FTIR), Raman, Contact Angle, X-ray diffraction (XRD), Field Emission Scanning Electron Microscope (FESEM), Energy Dispersive X-Ray Microanalysis (EDAX), Transmission electron microscopy (TEM), and BET. Copyright © 2017. Published by Elsevier B.V.

Effect of interfaces on electron transport properties of MoS2-Au Contacts

Science.gov (United States)

Aminpour, Maral; Hapala, Prokop; Le, Duy; Jelinek, Pavel; Rahman, Talat S.; Rahman's Group Collaboration; Nanosurf Lab Collaboration

2014-03-01

Single layer MoS2 is a promising material for future electronic devices such as transistors since it has good transport characteristics with mobility greater than 200 cm-1V-1s-1 and on-off current ratios up to 108. However, before MoS2 can become a mainstream electronic material for the semiconductor industry, the design of low resistive metal-semiconductor junctions as contacts of the electronic devices needs to be addressed and studied systematically. We have examined the effect of Au contacts on the electronic transport properties of single layer MoS2 using density functional theory in combination with the non-equilibrium Green's function method. The Schottky barrier between Au contact and MoS2, transmission spectra, and I-V curves will be reported and discussed as a function of MoS2 and Au interfaces of varying geometry. This work is supported in part by the US Department of Energy under grant DE-FG02-07ER15842.

Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

KAUST Repository

Tangi, Malleswararao

2017-09-22

We report an unusual thermal quenching of the micro-photoluminescence (µ-PL) intensity for a sandwiched single-layer (SL) MoS2. For this study, MoS2 layers were chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N lattice matched templates. Later, to accomplish air-stable sandwiched SL-MoS2, a thin In0.15Al0.85N cap layer was deposited on the MoS2/In0.15Al0.85N heterostructure. We confirm that the sandwiched MoS2 is a single layer from optical and structural analyses using µ-Raman spectroscopy and scanning transmission electron microscopy, respectively. By using high-resolution X-ray photoelectron spectroscopy, no structural phase transition of MoS2 is noticed. The recombination processes of bound and free excitons were analyzed by the power-dependent µ-PL studies at 77 K and room temperature (RT). The temperature-dependent micro photoluminescence (TDPL) measurements were carried out in the temperature range of 77 – 400 K. As temperature increases, a significant red-shift is observed for the free-exciton PL peak, revealing the delocalization of carriers. Further, we observe unconventional negative thermal quenching behavior, the enhancement of the µ-PL intensity with increasing temperatures up to 300K, which is explained by carrier hopping transitions that take place between shallow localized states to the band-edges. Thus, this study renders a fundamental insight into understanding the anomalous thermal quenching of µ-PL intensity of sandwiched SL-MoS2.

Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

KAUST Repository

Tangi, Malleswararao; Shakfa, Mohammad Khaled; Mishra, Pawan; Li, Ming-Yang; Chiu, Ming-Hui; Ng, Tien Khee; Li, Lain-Jong; Ooi, Boon S.

2017-01-01

We report an unusual thermal quenching of the micro-photoluminescence (µ-PL) intensity for a sandwiched single-layer (SL) MoS2. For this study, MoS2 layers were chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N lattice matched templates. Later, to accomplish air-stable sandwiched SL-MoS2, a thin In0.15Al0.85N cap layer was deposited on the MoS2/In0.15Al0.85N heterostructure. We confirm that the sandwiched MoS2 is a single layer from optical and structural analyses using µ-Raman spectroscopy and scanning transmission electron microscopy, respectively. By using high-resolution X-ray photoelectron spectroscopy, no structural phase transition of MoS2 is noticed. The recombination processes of bound and free excitons were analyzed by the power-dependent µ-PL studies at 77 K and room temperature (RT). The temperature-dependent micro photoluminescence (TDPL) measurements were carried out in the temperature range of 77 – 400 K. As temperature increases, a significant red-shift is observed for the free-exciton PL peak, revealing the delocalization of carriers. Further, we observe unconventional negative thermal quenching behavior, the enhancement of the µ-PL intensity with increasing temperatures up to 300K, which is explained by carrier hopping transitions that take place between shallow localized states to the band-edges. Thus, this study renders a fundamental insight into understanding the anomalous thermal quenching of µ-PL intensity of sandwiched SL-MoS2.

The synthesis of hierarchical nanostructured MoS_2/Graphene composites with enhanced visible-light photo-degradation property

International Nuclear Information System (INIS)

Zhao, Yongjie; Zhang, Xiaowei; Wang, Chengzhi; Zhao, Yuzhen; Zhou, Heping; Li, Jingbo; Jin, HaiBo

2017-01-01

Graphical abstract: Introducing graphene layer into MoS_2 could construct the steady hierarchical structure which could efficiently separate the photo-induced electrons so as to enhance the photo- degradation behavior. - Highlights: • The MoS_2 and MoS_2/Graphene nanocomposite have been synthesized via a solvothermal process. • The scrolled nanosheets of MoS_2 combining with interconnected graphene network promoted the formation of steady hierarchical architecture. • Comparing with MoS_2, the hierarchical MoS_2/Graphene nanocomposite achieved relatively higher degradation rate. • The synergistic effect mechanism for excellent photo-degradation activity was proposed. - Abstract: Novel two-dimensional materials with a layered structure are of special interest for a variety of promising applications. Herein, MoS_2 and MoS_2/Graphene nanocomposite with hierarchical nanostructure were successfully synthesized employing a one-step hydrothermal method. Photo-degradation of methylene blue (MB) and rhodamine (RHB) were adopted to assess the photo-degradation ability of the products. Comparing with bare MoS_2, the hierarchical MoS_2/Graphene nanocomposite achieved relatively higher degradation rate of 99% in 28 min for MB as well in 50 min for RHB. These results verified that this proposed hierarchical nanocomposite is a good photo-degradation semiconductor. The excellent performance was mainly ascribed to the synergistic effect of MoS_2 and graphene layers. The MoS_2 possessing a band gap of 1.9 eV would provide abundant electron-hole pairs. The graphene layers with excellent electro-conductivity could realize the quick transport of electrons via its extended π-conjugation structure, consequently benefiting the separation of photo-generated carriers. These findings indicate that the graphene layer is a promising candidate as a co-catalyst for MoS_2 photo-catalyst, and also provide useful information for understanding the observed enhanced photocatalytic mechanism

Hydrothermal synthesis of layer-controlled MoS_2/graphene composite aerogels for lithium-ion battery anode materials

International Nuclear Information System (INIS)

Zhao, Bing; Wang, Zhixuan; Gao, Yang; Chen, Lu; Lu, Mengna; Jiao, Zheng; Jiang, Yong; Ding, Yuanzhang; Cheng, Lingli

2016-01-01

Highlights: • Layer-controlled MoS_2/GA composites are synthesized by a facile hydrothermal route. • Few-layer (5–15 layers) MoS_2 nanosheets are decorated on the surface of GNS homogeneously and tightly. • The growth mechanism of the lay-controlled MoS_2/GA composites is proposed. • The composite delivers high specific capacity of 1085.0 mAh g"−"1 at 0.1 A g"−"1. - Abstract: Layer-controlled MoS_2/graphene aerogels (MoS_2/GA) composites are synthesized by a facile hydrothermal route, in which few-layer (5–15 layers) MoS_2 nanosheets with high crystalline are decorated on the surface of graphene nanosheets homogeneously and tightly. The number of the MoS_2 layers can be easily controlled through adjusting the amount of molybdenum source in the reaction system. Moreover, the growth mechanism of the lay-controlled MoS_2/GA composites is proposed. The three-dimensional MoS_2/GA with macroporous micro-structure not only shortens the transportation length of electrons and ions, but also restrains the re-stacking of MoS_2 effectively, stabilizing the electrode structure during repeated charging/discharging processes. Electrochemical tests demonstrate that this few-layer MoS_2/GA composite exhibits a high reversible capacity of 1085.0 mAh g"−"1 at current density of 100 mA g"−"1, as well as extraordinarily high cycling stability and rate capability.

Large Area Deposition of MoS2 by Pulsed Laser Deposition with In-Situ Thickness Control

KAUST Repository

Serna, Martha I.

2016-05-24

A scalable and catalyst-free method to deposit stoichiometric Molybdenum Disulfide (MoS2) films over large areas is reported with the maximum area limited by the size of the substrate holder. The method allows deposition of MoS2 layers on a wide range of substrates without any additional surface preparation including single crystals (sapphire and quartz), polycrystalline (HfO2), and amorphous (SiO2). The films are deposited using carefully designed MoS2 targets fabricated with excess of sulfur (S) and variable MoS2 and S particle size. Uniform and layered MoS2 films as thin as two monolayers, with an electrical resistivity of 1.54 × 104 Ω cm-1 were achieved. The MoS2 stoichiometry was as confirmed by High Resolution Rutherford Backscattering Spectrometry (HRRBS). With the method reported here, in situ graded MoS2 films ranging from ~1 to 10 monolayers can also be deposited.

Large Area Deposition of MoS2 by Pulsed Laser Deposition with In-Situ Thickness Control

KAUST Repository

Serna, Martha I.; Yoo, Seong H.; Moreno, Salvador; Xi, Yang; Oviedo, Juan Pablo; Choi, Hyunjoo; Alshareef, Husam N.; Kim, Moon J.; Minary-Jolandan, Majid; Quevedo-Lopez, Manuel A.

2016-01-01

A scalable and catalyst-free method to deposit stoichiometric Molybdenum Disulfide (MoS2) films over large areas is reported with the maximum area limited by the size of the substrate holder. The method allows deposition of MoS2 layers on a wide range of substrates without any additional surface preparation including single crystals (sapphire and quartz), polycrystalline (HfO2), and amorphous (SiO2). The films are deposited using carefully designed MoS2 targets fabricated with excess of sulfur (S) and variable MoS2 and S particle size. Uniform and layered MoS2 films as thin as two monolayers, with an electrical resistivity of 1.54 × 104 Ω cm-1 were achieved. The MoS2 stoichiometry was as confirmed by High Resolution Rutherford Backscattering Spectrometry (HRRBS). With the method reported here, in situ graded MoS2 films ranging from ~1 to 10 monolayers can also be deposited.

On-stack two-dimensional conversion of MoS2 into MoO3

Science.gov (United States)

Yeoung Ko, Taeg; Jeong, Areum; Kim, Wontaek; Lee, Jinhwan; Kim, Youngchan; Lee, Jung Eun; Ryu, Gyeong Hee; Park, Kwanghee; Kim, Dogyeong; Lee, Zonghoon; Lee, Min Hyung; Lee, Changgu; Ryu, Sunmin

2017-03-01

Chemical transformation of existing two-dimensional (2D) materials can be crucial in further expanding the 2D crystal palette required to realize various functional heterostructures. In this work, we demonstrate a 2D ‘on-stack’ chemical conversion of single-layer crystalline MoS2 into MoO3 with a precise layer control that enables truly 2D MoO3 and MoO3/MoS2 heterostructures. To minimize perturbation of the 2D morphology, a nonthermal oxidation using O2 plasma was employed. The early stage of the reaction was characterized by a defect-induced Raman peak, drastic quenching of photoluminescence (PL) signals and sub-nm protrusions in atomic force microscopy images. As the reaction proceeded from the uppermost layer to the buried layers, PL and optical second harmonic generation signals showed characteristic modulations revealing a layer-by-layer conversion. The plasma-generated 2D oxides, confirmed as MoO3 by x-ray photoelectron spectroscopy, were found to be amorphous but extremely flat with a surface roughness of 0.18 nm, comparable to that of 1L MoS2. The rate of oxidation quantified by Raman spectroscopy decreased very rapidly for buried sulfide layers due to protection by the surface 2D oxides, exhibiting a pseudo-self-limiting behavior. As exemplified in this work, various on-stack chemical transformations can be applied to other 2D materials in forming otherwise unobtainable materials and complex heterostructures, thus expanding the palette of 2D material building blocks.

Controllable Growth of Monolayer MoS2 and MoSe2 Crystals Using Three-temperature-zone Furnace

Science.gov (United States)

Zheng, Binjie; Chen, Yuanfu

2017-12-01

Monolayer molybdenum disulfide (MoS2) and molybdenum diselenide (MoSe2) have attracted a great attention for their exceptional electronic and optoelectronic properties among the two dimensional family. However, controllable synthesis of monolayer crystals with high quality needs to be improved urgently. Here we demonstrate a chemical vapor deposition (CVD) growth of monolayer MoS2 and MoSe2 crystals using three-temperature-zone furnace. Systematical study of the effects of growth pressure, temperature and time on the thickness, morphology and grain size of crystals shows the good controllability. The photoluminescence (PL) characterizations indicate that the as-grown monolayer MoS2 and MoSe2 crystals possess excellent optical qualities with very small full-width-half-maximum (FWHM) of 96 me V and 57 me V, respectively. It is comparable to that of exfoliated monolayers and reveals their high crystal quality. It is promising that our strategy should be applicable for the growth of other transition metal dichalcogenides (TMDs) monolayer crystals.

The Interface between Gd and Monolayer MoS2: A First-Principles Study

KAUST Repository

Zhang, Xuejing

2014-12-08

We analyze the electronic structure of interfaces between two-, four- and six-layer Gd(0001) and monolayer MoS2 by first-principles calculations. Strong chemical bonds shift the Fermi energy of MoS2 upwards into the conduction band. At the surface and interface the Gd f states shift to lower energy and new surface/interface Gd d states appear at the Fermi energy, which are strongly hybridized with the Mo 4d states and thus lead to a high spin-polarization (ferromagnetically ordered Mo magnetic moments of 0.15 μB). Gd therefore is an interesting candidate for spin injection into monolayer MoS2.

Edge structures and properties of triangular antidots in single-layer MoS2

International Nuclear Information System (INIS)

Gan, Li-Yong; Cheng, Yingchun; Huang, Wei; Schwingenschlögl, Udo; Yao, Yingbang; Zhao, Yong; Zhang, Xi-xiang

2016-01-01

Density functional theory and experiments are employed to shed light on the edge structures of antidots in O etched single-layer MoS 2 . The equilibrium morphology is found to be the zigzag Mo edge with each Mo atom bonded to two O atoms, in a wide range of O chemical potentials. Scanning electron microscopy shows that the orientation of the created triangular antidots is opposite to the triangular shape of the single-layer MoS 2 samples, in agreement with the theoretical predictions. Furthermore, edges induced by O etching turn out to be p-doped, suggesting an effective strategy to realize p-type MoS 2 devices.

Highly sensitive MoS2 photodetectors with graphene contacts

Science.gov (United States)

Han, Peize; St. Marie, Luke; Wang, Qing X.; Quirk, Nicholas; El Fatimy, Abdel; Ishigami, Masahiro; Barbara, Paola

2018-05-01

Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated remarkable performance, scalability is still a significant issue. Most devices are created using techniques that are not suitable for mass production, such as mechanical exfoliation of monolayer flakes and patterning by electron-beam lithography. Here we show that large-area MoS2 grown by chemical vapor deposition and patterned by photolithography yields highly sensitive photodetectors, with record shot-noise-limited detectivities of 8.7 × 1014 Jones in ambient condition and even higher when sealed with a protective layer. These detectivity values are higher than the highest values reported for photodetectors based on exfoliated MoS2. We study MoS2 devices with gold electrodes and graphene electrodes. The devices with graphene electrodes have a tunable band alignment and are especially attractive for scalable ultra-thin flexible optoelectronics.

Piezoelectricity enhancement and bandstructure modification of atomic defect-mediated MoS2 monolayer.

Science.gov (United States)

Yu, Sheng; Rice, Quinton; Neupane, Tikaram; Tabibi, Bagher; Li, Qiliang; Seo, Felix Jaetae

2017-09-13

Piezoelectricity appears in the inversion asymmetric crystal that converts mechanical deformation to electricity. Two-dimensional transition metal dichalcolgenide (TMDC) monolayers exhibit the piezoelectric effect due to inversion asymmetry. The intrinsic piezoelectric coefficient (e 11 ) of MoS 2 is ∼298 pC m -1 . For the single atomic shift of Mo of 20% along the armchair direction, the piezoelectric coefficient (e 11 ) of MoS 2 with 5 × 5 unit cells was enhanced up to 18%, and significantly modified the band structure. The single atomic shift in the MoS 2 monolayer also induced new energy levels inside the forbidden bandgap. The defect-induced energy levels for a Mo atom shift along the armchair direction are relatively deeper than that for a S atom shift along the same direction. This indicates that the piezoelectricity and band structure of MoS 2 can be engineered by a single atomic shift in the monolayer with multi unit cells for piezo- and opto-electric applications.

Solution processable mixed-solvent exfoliated MoS2 nanosheets for efficient and robust organic light-emitting diodes

Science.gov (United States)

Liu, Chia-Wei; Wang, Chia; Liao, Chia-Wei; Golder, Jan; Tsai, Ming-Chih; Young, Hong-Tsu; Chen, Chin-Ti; Wu, Chih-I.

2018-04-01

We demonstrate the use of solution-processed molybdenum trioxide (MoO3) nanoparticle-decorated molybdenum disulfide (MoS2) nanosheets (MoS2/MoO3) as hole injection layer (HIL) in organic lighting diodes (OLEDs). The device performance is shown to be significantly improved by the introduction of such MoS2/MoO3 HIL without any post-ultraviolet-ozone treatment, and is shown to better the performance of devices fabricated using conventional poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) and MoO3 nanoparticle HILs. The MoS2/MoO3 nanosheets form a compact film, as smooth as PEDOT:PSS films and smoother than MoO3 nanoparticle films, when simply spin-coated on indium tin oxide substrates. The improvement in device efficiency can be attributed to the smooth surface of the nanostructured MoS2/MoO3 HIL and the excellent conductivity characteristics of the two-dimensional (2D) layered material (MoS2), which facilitate carrier transport in the device and reduce the sheet resistance. Moreover, the long-term stability of OLED devices that use such MoS2/MoO3 layers is shown to be improved dramatically compared with hygroscopic and acidic PEDOT:PSS-based devices.

Solution processable mixed-solvent exfoliated MoS2 nanosheets for efficient and robust organic light-emitting diodes

Directory of Open Access Journals (Sweden)

Chia-Wei Liu

2018-04-01

Full Text Available We demonstrate the use of solution-processed molybdenum trioxide (MoO3 nanoparticle-decorated molybdenum disulfide (MoS2 nanosheets (MoS2/MoO3 as hole injection layer (HIL in organic lighting diodes (OLEDs. The device performance is shown to be significantly improved by the introduction of such MoS2/MoO3 HIL without any post-ultraviolet-ozone treatment, and is shown to better the performance of devices fabricated using conventional poly(3,4-ethylenedioxythiophene-poly(styrenesulfonate (PEDOT:PSS and MoO3 nanoparticle HILs. The MoS2/MoO3 nanosheets form a compact film, as smooth as PEDOT:PSS films and smoother than MoO3 nanoparticle films, when simply spin-coated on indium tin oxide substrates. The improvement in device efficiency can be attributed to the smooth surface of the nanostructured MoS2/MoO3 HIL and the excellent conductivity characteristics of the two-dimensional (2D layered material (MoS2, which facilitate carrier transport in the device and reduce the sheet resistance. Moreover, the long-term stability of OLED devices that use such MoS2/MoO3 layers is shown to be improved dramatically compared with hygroscopic and acidic PEDOT:PSS-based devices.

Attapulgite-CeO2/MoS2 ternary nanocomposite for photocatalytic oxidative desulfurization

Science.gov (United States)

Li, Xiazhang; Zhang, Zuosong; Yao, Chao; Lu, Xiaowang; Zhao, Xiaobing; Ni, Chaoying

2016-02-01

Novel attapulgite(ATP)-CeO2/MoS2 ternary nanocomposites were synthesized by microwave assisted assembly method. The structures of the nanocomposites were characterized by XRD, FT-IR, UV-vis, XPS and in situ TEM. The photocatalytic activities of ATP-CeO2/MoS2 composites were investigated by degradating dibenzothiophene (DBT) in gasoline under visible light irradiation. The effect of the mass ratio of CeO2 to MoS2 on photocatalytic activity was investigated. The results indicate that the three-dimensional network structure is firmly constructed by ATP skeleton, CeO2 particles and MoS2 nanosheet which effectively increase the surface area of the composites and promote the separation of electrons and holes by resulting electronic transmission channels of multi-channel in space. The degradation rate of DBT can reach 95% under 3 h irradiation when the mass ratio of CeO2/MoS2 is 4/10. A plausible mechanism for the photocatalytic oxidative desulfurization of this nanocomposite is put forward.

Two-dimensional Si nanosheets with local hexagonal structure on a MoS(2) surface.

Science.gov (United States)

Chiappe, Daniele; Scalise, Emilio; Cinquanta, Eugenio; Grazianetti, Carlo; van den Broek, Bas; Fanciulli, Marco; Houssa, Michel; Molle, Alessandro

2014-04-02

The structural and electronic properties of a Si nanosheet (NS) grown onto a MoS2 substrate by means of molecular beam epitaxy are assessed. Epitaxially grown Si is shown to adapt to the trigonal prismatic surface lattice of MoS2 by forming two-dimensional nanodomains. The Si layer structure is distinguished from the underlying MoS2 surface structure. The local electronic properties of the Si nanosheet are dictated by the atomistic arrangement of the layer and unlike the MoS2 hosting substrate they are qualified by a gap-less density of states. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigation on nonlinear optical properties of MoS2 nanoflakes grown on silicon and quartz substrates

Science.gov (United States)

Bayesteh, Samaneh; Zahra Mortazavi, Seyedeh; Reyhani, Ali

2018-05-01

In this study, MoS2 nanoflakes were directly grown on different substrates—Si/SiO2 and quartz—by one-step thermal chemical vapor deposition using MoO3 and sulfide powders as precursors. Scanning electron microscopy and x-ray diffraction patterns demonstrated the formation of MoS2 structures on both substrates. Moreover, UV-visible and photoluminescence analysis confirmed the formation of MoS2 few-layer structures. According to Raman spectroscopy, by assessment of the line width and frequency shift differences between the and A 1g, it was inferred that the MoS2 grown on the silicon substrate was monolayer and that grown on the quartz substrate was multilayer. In addition, open-aperture and close-aperture Z-scan techniques were employed to study the nonlinear optical properties including nonlinear absorption and nonlinear refraction of the grown MoS2. All experiments were performed using a diode laser with a wavelength of 532 nm as the light source. It is noticeable that both samples demonstrate obvious self-defocusing behavior. The monolayer MoS2 grown on the silicon substrate displayed considerable two-photon absorption while, the multilayer MoS2 synthesized on the quartz exhibited saturable absorption. In general, few-layered MoS2 would be useful for the development of nanophotonic devices like optical limiters, optical switchers, etc.

A Route to Permanent Valley Polarization in Monolayer MoS2

KAUST Repository

Singh, Nirpendra

2016-10-24

Realization of permanent valley polarization in Cr-doped monolayer MoS2 is found to be unfeasible because of extended moment formation. Introduction of an additional hole is suggested as a viable solution. V-doped monolayer MoS2 is demonstrated to sustain permanent valley polarization and therefore can serve as a prototype material for valleytronics.

Micro-dressing of a carbon nanotube array with MoS2 gauze

Science.gov (United States)

Lim, Sharon Xiaodai; Woo, Kah Whye; Ng, Junju; Lu, Junpeng; Kwang, Siu Yi; Zhang, Zheng; Tok, Eng Soon; Sow, Chorng-Haur

2015-10-01

Few-layer MoS2 film has been successfully assembled over an array of CNTs. Using different focused laser beams with different wavelengths, site selective patterning of either the MoS2 film or the supporting CNT array is achieved. This paves the way for applications and investigations into the fundamental properties of the hybrid MoS2/CNT material with a controlled architecture. Through Raman mapping, straining and electron doping of the MoS2 film as a result of interaction with the supporting CNT array are detected. The role of the MoS2 film was further emphasized with a lower work function being detected from Ultra-violet Photoelectron Spectrsocopy (UPS) measurements of the hybrid material, compared to the CNT array. The effect of the changes in the work function was illustrated through the optoelectronic behavior of the hybrid material. At 0 V, 3.49 nA of current is measured upon illuminating the sample with a broad laser beam emitting laser light with a wavelength of 532 nm. With a strong response to external irradiation of different wavelengths, and changes to the power of the excitation source, the hybrid material has shown potential for applications in optoelectronic devices.

The origin of the enhanced performance of nitrogen-doped MoS_2 in lithium ion batteries

International Nuclear Information System (INIS)

Liu, Qiuhong; Weijun, Xia; Wu, Zhenjun; Huo, Jia; Liu, Dongdong; Wang, Shuangyin; Wang, Qiang

2016-01-01

MoS_2 with a similar layered structure to graphene has been widely applied in various areas including lithium ion batteries. However, low conductivity, capacity fading and poor rate performance are still the main challenges for MoS_2 anode materials. In this work, for the first time, we prepared nitrogen-doped MoS_2 (N-MoS_2) nanosheets through a simple two-step method involving the preparation of MoS_2 with defects by the hydrothermal method, followed by sintering in a NH_3 atmosphere. Our electrochemical characterizations and density functional theory calculations demonstrated that nitrogen doping could enhance the electron conductivity and showed higher specific capacity than pristine MoS_2 as anode materials of lithium ion batteries, which can be attributed to the faster transportation of electrons and ions because of nitrogen doping. This work helps us understand the origin of the enhanced performance of N-doped MoS_2 in lithium ion batteries. (paper)

Edge structures and properties of triangular antidots in single-layer MoS2

KAUST Repository

Gan, Li Yong; Cheng, Yingchun; Schwingenschlö gl, Udo; Yao, Yingbang; Zhao, Yong; Zhang, Xixiang; Huang, Wei

2016-01-01

Density functional theory and experiments are employed to shed light on the edge structures of antidots in O etched single-layer MoS2. The equilibrium morphology is found to be the zigzag Mo edge with each Mo atom bonded to two O atoms, in a wide range of O chemical potentials. Scanning electron microscopy shows that the orientation of the created triangular antidots is opposite to the triangular shape of the single-layer MoS2 samples, in agreement with the theoretical predictions. Furthermore, edges induced by O etching turn out to be p-doped, suggesting an effective strategy to realize p-type MoS2 devices. Published by AIP Publishing.

Edge structures and properties of triangular antidots in single-layer MoS2

KAUST Repository

Gan, Li Yong

2016-08-30

Density functional theory and experiments are employed to shed light on the edge structures of antidots in O etched single-layer MoS2. The equilibrium morphology is found to be the zigzag Mo edge with each Mo atom bonded to two O atoms, in a wide range of O chemical potentials. Scanning electron microscopy shows that the orientation of the created triangular antidots is opposite to the triangular shape of the single-layer MoS2 samples, in agreement with the theoretical predictions. Furthermore, edges induced by O etching turn out to be p-doped, suggesting an effective strategy to realize p-type MoS2 devices. Published by AIP Publishing.

MoS2 coated hollow carbon spheres for anodes of lithium ion batteries

International Nuclear Information System (INIS)

Zhang, Yufei; Wang, Ye; Shi, Wenhui; Yang, Huiying; Yang, Jun; Huang, Wei; Dong, Xiaochen

2016-01-01

With the assistance of resorcinol–formaldehyde, MoS 2 coated hollow carbon spheres (C@MoS 2 ) were synthesized through a facile hydrothermal route followed by heat and alkali treatments. The measurements indicate that the hollow carbon spheres with an average diameter of 300 nm and shell thickness of 20 nm. And the hollow core are uniformly covered by ultrathin MoS 2 nanosheets with a length increased to 400 nm. The unique hollow structure and the synergistic effect between carbon layer and MoS 2 nanosheets significantly enhance the rate capability and electrochemical stability of C@MoS 2 spheres as anode material of lithium-ion battery. The synthesized C@MoS 2 delivered a capacity of 750 mAh g −1 at a current density of 100 mA g −1 . More importantly, the C@MoS 2 maintained a reversible capacity of 533 mAh g −1 even at a high current density of 1000 mA g −1 . The study indicated that MoS 2 coated hollow carbon spheres can be promising anode material for next generation high-performance lithium-ion batteries. (paper)

Magnetism by interfacial hybridization and p-type doping of MoS(2) in Fe(4)N/MoS(2) superlattices: a first-principles study.

Science.gov (United States)

Feng, Nan; Mi, Wenbo; Cheng, Yingchun; Guo, Zaibing; Schwingenschlögl, Udo; Bai, Haili

2014-03-26

Magnetic and electronic properties of Fe4N(111)/MoS2(√3 × √3) superlattices are investigated by first-principles calculations, considering two models: (I) Fe(I)Fe(II)-S and (II) N-S interfaces, each with six stacking configurations. In model I, strong interfacial hybridization between Fe(I)/Fe(II) and S results in magnetism of monolayer MoS2, with a magnetic moment of 0.33 μB for Mo located on top of Fe(I). For model II, no magnetism is induced due to weak N-S interfacial bonding, and the semiconducting nature of monolayer MoS2 is preserved. Charge transfer between MoS2 and N results in p-type MoS2 with Schottky barrier heights of 0.5-0.6 eV. Our results demonstrate that the interfacial geometry and hybridization can be used to tune the magnetism and doping in Fe4N(111)/MoS2(√3 × √3) superlattices.

Electronic and magnetic properties of MoS2 nanoribbons with sulfur line vacancy defects

International Nuclear Information System (INIS)

Han, Yang; Zhou, Jian; Dong, Jinming

2015-01-01

Highlights: • We performed DFT calculations on Sulfur line defects embedded MoS 2 . • The defects induced bond strains are larger in the zigzag (ZZ) edge ones. • The ZZ ones are metals, having two degenerate ground states FM and AFM. • The armchair ones are nonmagnetic semiconductors. • The defects can induce some defect states in the electronic structures. - Abstract: Motivated by the recent experimental result that single sulfur vacancies in monolayer MoS 2 are mobile under the electron beam and easily agglomerate into the sulfur line vacancy defects [Physical Review B 88, 035301(2013)] , the structural, electronic and magnetic properties of one dimensional zigzag (ZZ) and armchair (AC) edge MoS 2 nanoribbons with single or double staggered sulfur line vacancy defects (hereafter, abbreviated as SV or DV, respectively), parallel to their edges, have been investigated systematically by density functional theory calculations. It is very interesting to find that the bond strains induced by the sulfur line vacancy defect can cause a much larger out-of plane distortions in the ZZ edge MoS 2 nanoribbon than in the AC edge counterpart. Besides, the defective ZZ edge MoS 2 nanoribbons with SV or DV are both metals, having their two respective degenerate ground states with the same energy, among which one is ferromagnetic (FM “ + +”) and the other is antiferromagnetic (AFM “ + −”). But the AC edge MoS 2 nanoribbons with SV or DV are both nonmagnetic semiconductors, having very different gap values. Finally, the sulfur line vacancy defects would induce some defect states in the electronic structures of the defective MoS 2 nanoribbons. All these important results could provide a new route of tuning the electronic properties of MoS 2 nanoribbons and its derivatives for their promising applications in nanoelectronics and optoelectronics

A Facile Strategy for the Preparation of MoS3 and its Application as a Negative Electrode for Supercapacitors.

Science.gov (United States)

Zhang, Tong; Kong, Ling-Bin; Dai, Yan-Hua; Yan, Kun; Shi, Ming; Liu, Mao-Cheng; Luo, Yong-Chun; Kang, Long

2016-09-06

Owing to their graphene-like structure and available oxidation valence states, transition metal sulfides are promising candidates for supercapacitors. Herein, we report the application of MoS3 as a new negative electrode for supercapacitors. MoS3 was fabricated by the facile thermal decomposition of a (NH4 )2 MoS4 precursor. For comparison, samples of MoS3 &MoS2 and MoS2 were also synthesized by using the same method. Moreover, this is the first report of the application of MoS3 as a negative electrode for supercapacitors. MoS3 displayed a high specific capacitance of 455.6 F g(-1) at a current density of 0.5 A g(-1) . The capacitance retention of the MoS3 electrode was 92 % after 1500 cycles, and even 71 % after 5000 cycles. In addition, an asymmetric supercapacitor assembly of MoS3 as the negative electrode demonstrated a high energy density at a high potential of 2.0 V in aqueous electrolyte. These notable results show that MoS3 has significant potential in energy-storage devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study of interfacial strain at the α-Al2O3/monolayer MoS2 interface by first principle calculations

Science.gov (United States)

Yu, Sheng; Ran, Shunjie; Zhu, Hao; Eshun, Kwesi; Shi, Chen; Jiang, Kai; Gu, Kunming; Seo, Felix Jaetae; Li, Qiliang

2018-01-01

With the advances in two-dimensional (2D) transition metal dichalcogenides (TMDCs) based metal-oxide-semiconductor field-effect transistor (MOSFET), the interface between the semiconductor channel and gate dielectrics has received considerable attention due to its significant impacts on the morphology and charge transport of the devices. In this study, first principle calculations were utilized to investigate the strain effect induced by the interface between crystalline α-Al2O3 (0001)/h-MoS2 monolayer. The results indicate that the 1.3 nm Al2O3 can induce a 0.3% tensile strain on the MoS2 monolayer. The strain monotonically increases with thicker dielectric layers, inducing more significant impact on the properties of MoS2. In addition, the study on temperature effect indicates that the increasing temperature induces monotonic lattice expansion. This study clearly indicates that the dielectric engineering can effectively tune the properties of 2D TMDCs, which is very attractive for nanoelectronics.

First-principles study of van der Waals interactions in MoS2 and MoO3

International Nuclear Information System (INIS)

Peelaers, H; Van de Walle, C G

2014-01-01

Van der Waals interactions play an important role in layered materials such as MoS 2 and MoO 3 . Within density functional theory, several methods have been developed to explicitly include van der Waals interactions. We compare the performance of several of these functionals in describing the structural and electronic properties of MoS 2 and MoO 3 . We include functionals based on the local density or generalized gradient approximations, but also based on hybrid functionals. The coupling of the semiempirical Grimme D2 method with the hybrid functional HSE06 is shown to lead to a very good description of both structural and electronic properties. (paper)

Prospects of zero Schottky barrier height in a graphene-inserted MoS2-metal interface

Science.gov (United States)

Chanana, Anuja; Mahapatra, Santanu

2016-01-01

A low Schottky barrier height (SBH) at source/drain contact is essential for achieving high drive current in atomic layer MoS2-channel-based field effect transistors. Approaches such as choosing metals with appropriate work functions and chemical doping are employed previously to improve the carrier injection from the contact electrodes to the channel and to mitigate the SBH between the MoS2 and metal. Recent experiments demonstrate significant SBH reduction when graphene layer is inserted between metal slab (Ti and Ni) and MoS2. However, the physical or chemical origin of this phenomenon is not yet clearly understood. In this work, density functional theory simulations are performed, employing pseudopotentials with very high basis sets to get insights of the charge transfer between metal and monolayer MoS2 through the inserted graphene layer. Our atomistic simulations on 16 different interfaces involving five different metals (Ti, Ag, Ru, Au, and Pt) reveal that (i) such a decrease in SBH is not consistent among various metals, rather an increase in SBH is observed in case of Au and Pt; (ii) unlike MoS2-metal interface, the projected dispersion of MoS2 remains preserved in any MoS2-graphene-metal system with shift in the bands on the energy axis. (iii) A proper choice of metal (e.g., Ru) may exhibit ohmic nature in a graphene-inserted MoS2-metal contact. These understandings would provide a direction in developing high-performance transistors involving heteroatomic layers as contact electrodes.

Robust Denaturation of Villin Headpiece by MoS2 Nanosheet: Potential Molecular Origin of the Nanotoxicity

Science.gov (United States)

Gu, Zonglin; Yang, Zaixing; Kang, Seung-Gu; Yang, Jerry R.; Luo, Judong; Zhou, Ruhong

2016-06-01

MoS2 nanosheet, a new two-dimensional transition metal dichalcogenides nanomaterial, has attracted significant attentions lately due to many potential promising biomedical applications. Meanwhile, there is also a growing concern on its biocompatibility, with little known on its interactions with various biomolecules such as proteins. In this study, we use all-atom molecular dynamics simulations to investigate the interaction of a MoS2 nanosheet with Villin Headpiece (HP35), a model protein widely used in protein folding studies. We find that MoS2 exhibits robust denaturing capability to HP35, with its secondary structures severely destroyed within hundreds of nanosecond simulations. Both aromatic and basic residues are critical for the protein anchoring onto MoS2 surface, which then triggers the successive protein unfolding process. The main driving force behind the adsorption process is the dispersion interaction between protein and MoS2 monolayer. Moreover, water molecules at the interface between some key hydrophobic residues (e.g. Trp-64) and MoS2 surface also help to accelerate the process driven by nanoscale drying, which provides a strong hydrophobic force. These findings might have shed new light on the potential nanotoxicity of MoS2 to proteins with atomic details, which should be helpful in guiding future biomedical applications of MoS2 with its nanotoxicity mitigated.

Enhanced Gas Separation through Nanoconfined Ionic Liquid in Laminated MoS2 Membrane.

Science.gov (United States)

Chen, Danke; Ying, Wen; Guo, Yi; Ying, Yulong; Peng, Xinsheng

2017-12-20

Two-dimensional (2D) materials-based membranes show great potential for gas separation. Herein an ionic liquid, 1-butyl-3-methylimidazolium tetrafluoroborate ([BMIM][BF 4 ]), was confined in the 2D channels of MoS 2 -laminated membranes via an infiltration process. Compared with the corresponding bulk [BMIM][BF 4 ], nanoconfined [BMIM][BF 4 ] shows an obvious incremental increase in freezing point and a shift of vibration bands. The resulting MoS 2 -supported ionic liquid membrane (MoS 2 SILM) exhibits excellent CO 2 separation performance with high CO 2 permeance (47.88 GPU) and superb selectivity for CO 2 /N 2 (131.42), CO 2 /CH 4 (43.52), and CO 2 /H 2 (14.95), which is much better than that of neat [BMIM][BF 4 ] and [BMIM][BF 4 ]-based membranes. The outstanding performance of MoS 2 SILMs is attributed to the nanoconfined [BMIM][BF 4 ], which enables fast transport of CO 2 . Long-term operation also reveals the durability and stability of the prepared MoS 2 SILMs. The method of confining ILs in the 2D nanochannels of 2D materials may pave a new way for CO 2 capture and separation.

Printable Transfer-Free and Wafer-Size MoS2/Graphene van der Waals Heterostructures for High-Performance Photodetection.

Science.gov (United States)

Liu, Qingfeng; Cook, Brent; Gong, Maogang; Gong, Youpin; Ewing, Dan; Casper, Matthew; Stramel, Alex; Wu, Judy

2017-04-12

Two-dimensional (2D) MoS 2 /graphene van der Waals heterostructures integrate the superior light-solid interaction in MoS 2 and charge mobility in graphene for high-performance optoelectronic devices. Key to the device performance lies in a clean MoS 2 /graphene interface to facilitate efficient transfer of photogenerated charges. Here, we report a printable and transfer-free process for fabrication of wafer-size MoS 2 /graphene van der Waals heterostructures obtained using a metal-free-grown graphene, followed by low-temperature growth of MoS 2 from the printed thin film of ammonium thiomolybdate on graphene. The photodetectors based on the transfer-free MoS 2 /graphene heterostructures exhibit extraordinary short photoresponse rise/decay times of 20/30 ms, which are significantly faster than those of the previously reported MoS 2 /transferred-graphene photodetectors (0.28-1.5 s). In addition, a high photoresponsivity of up to 835 mA/W was observed in the visible spectrum on such transfer-free MoS 2 /graphene heterostructures, which is much higher than that of the reported photodetectors based on the exfoliated layered MoS 2 (0.42 mA/W), the graphene (6.1 mA/W), and transfer-free MoS 2 /graphene/SiC heterostructures (∼40 mA/W). The enhanced performance is attributed to the clean interface on the transfer-free MoS 2 /graphene heterostructures. This printable and transfer-free process paves the way for large-scale commercial applications of the emerging 2D heterostructures in optoelectronics and sensors.

Stretching and breaking of monolayer MoS2—an atomistic simulation

International Nuclear Information System (INIS)

Lorenz, Tommy; Joswig, Jan-Ole; Seifert, Gotthard

2014-01-01

We report on the simulation of the nanoindentation process of monolayer MoS 2 using molecular-dynamics simulations and a density-functional based tight-binding method. A circular sheet of MoS 2 with clamped boundaries was indented by a slowly moved tip, which deformed and finally pierced the layer. We found the Young’s modulus of monolayer MoS 2 to be 262 GPa, which is in good agreement with experimental observations. Furthermore, the energetic and structural behavior during the indentation process was analyzed. Elasticity theory supplies the necessary equations to explain the experiment. Thereby, the nature of the linear term in the force-deflection relation is discussed. (letter)

Atomic Scale Simulation on the Anti-Pressure and Friction Reduction Mechanisms of MoS2 Monolayer

Directory of Open Access Journals (Sweden)

Yang Liu

2018-04-01

Full Text Available MoS2 nanosheets can be used as solid lubricants or additives of lubricating oils to reduce friction and resist wear. However, the atomic scale mechanism still needs to be illustrated. Herein, molecular simulations on the indentation and scratching process of MoS2 monolayer supported by Pt(111 surface were conducted to study the anti-pressure and friction reduction mechanisms of the MoS2 monolayer. Three deformation stages of Pt-supported MoS2 monolayer were found during the indentation process: elastic deformation, plastic deformation and finally, complete rupture. The MoS2 monolayer showed an excellent friction reduction effect at the first two stages, as a result of enhanced load bearing capacity and reduced deformation degree of the substrate. Unlike graphene, rupture of the Pt-supported MoS2 monolayer was related primarily to out-of-plane compression of the monolayer. These results provide a new insight into the relationship between the mechanical properties and lubrication properties of 2D materials.

Enhanced Performance of MoS2 Photodetectors by Inserting an ALD-Processed TiO2 Interlayer

KAUST Repository

Pak, Yusin

2017-12-05

2D molybdenum disulfide (MoS2) possesses excellent optoelectronic properties that make it a promising candidate for use in high-performance photodetectors. Yet, to meet the growing demand for practical and reliable MoS2 photodetectors, the critical issue of defect introduction to the interface between the exfoliated MoS2 and the electrode metal during fabrication must be addressed, because defects deteriorate the device performance. To achieve this objective, the use of an atomic layer-deposited TiO2 interlayer (between exfoliated MoS2 and electrode) is reported in this work, for the first time, to enhance the performance of MoS2 photodetectors. The TiO2 interlayer is inserted through 20 atomic layer deposition cycles before depositing the electrode metal on MoS2/SiO2 substrate, leading to significantly enhanced photoresponsivity and response speed. These results pave the way for practical applications and provide a novel direction for optimizing the interlayer material.

Enhanced Performance of MoS2 Photodetectors by Inserting an ALD-Processed TiO2 Interlayer

KAUST Repository

Pak, Yusin; Park, Woojin; Mitra, Somak; Devi, Assa Aravindh Sasikala; Loganathan, Kalaivanan; Kumaresan, Yogeenth; Kim, Yonghun; Cho, Byungjin; Jung, Gun-Young; Hussain, Muhammad Mustafa; Roqan, Iman S.

2017-01-01

2D molybdenum disulfide (MoS2) possesses excellent optoelectronic properties that make it a promising candidate for use in high-performance photodetectors. Yet, to meet the growing demand for practical and reliable MoS2 photodetectors, the critical issue of defect introduction to the interface between the exfoliated MoS2 and the electrode metal during fabrication must be addressed, because defects deteriorate the device performance. To achieve this objective, the use of an atomic layer-deposited TiO2 interlayer (between exfoliated MoS2 and electrode) is reported in this work, for the first time, to enhance the performance of MoS2 photodetectors. The TiO2 interlayer is inserted through 20 atomic layer deposition cycles before depositing the electrode metal on MoS2/SiO2 substrate, leading to significantly enhanced photoresponsivity and response speed. These results pave the way for practical applications and provide a novel direction for optimizing the interlayer material.

Three-Dimensional Tubular MoS2/PANI Hybrid Electrode for High Rate Performance Supercapacitor.

Science.gov (United States)

Ren, Lijun; Zhang, Gaini; Yan, Zhe; Kang, Liping; Xu, Hua; Shi, Feng; Lei, Zhibin; Liu, Zong-Huai

2015-12-30

By using three-dimensional (3D) tubular molybdenum disulfide (MoS2) as both an active material in electrochemical reaction and a framework to provide more paths for insertion and extraction of ions, PANI nanowire arrays with a diameter of 10-20 nm can be controllably grown on both the external and internal surface of 3D tubular MoS2 by in situ oxidative polymerization of aniline monomers and 3D tubular MoS2/PANI hybrid materials with different amounts of PANI are prepared. A controllable growth of PANI nanowire arrays on the tubular MoS2 surface provides an opportunity to optimize the capacitive performance of the obtained electrodes. When the loading amount of PANI is 60%, the obtained MoS2/PANI-60 hybrid electrode not only shows a high specific capacitance of 552 F/g at a current density of 0.5 A/g, but also gives excellent rate capability of 82% from 0.5 to 30 A/g. The remarkable rate performance can be mainly attributed to the architecture with synergistic effect between 3D tubular MoS2 and PANI nanowire arrays. Moreover, the MoS2/PANI-60 based symmetric supercapacitor also exhibits the excellent rate performance and good cycling stability. The specific capacitance based on the total mass of the two electrodes is 124 F/g at a current density of 1 A/g and 79% of its initial capacitance is remained after 6000 cycles. The 3D tubular structure provides a good and favorable method for improving the capacitance retention of PANI electrode.

Doping of two-dimensional MoS2 by high energy ion implantation

Science.gov (United States)

Xu, Kang; Zhao, Yuda; Lin, Ziyuan; Long, Yan; Wang, Yi; Chan, Mansun; Chai, Yang

2017-12-01

Two-dimensional (2D) materials have been demonstrated to be promising candidates for next generation electronic circuits. Analogues to conventional Si-based semiconductors, p- and n-doping of 2D materials are essential for building complementary circuits. Controllable and effective doping strategies require large tunability of the doping level and negligible structural damage to ultrathin 2D materials. In this work, we demonstrate a doping method utilizing a conventional high-energy ion-implantation machine. Before the implantation, a Polymethylmethacrylate (PMMA) protective layer is used to decelerate the dopant ions and minimize the structural damage to MoS2, thus aggregating the dopants inside MoS2 flakes. By optimizing the implantation energy and fluence, phosphorus dopants are incorporated into MoS2 flakes. Our Raman and high-resolution transmission electron microscopy (HRTEM) results show that only negligibly structural damage is introduced to the MoS2 lattice during the implantation. P-doping effect by the incorporation of p+ is demonstrated by Photoluminescence (PL) and electrical characterizations. Thin PMMA protection layer leads to large kinetic damage but also a more significant doping effect. Also, MoS2 with large thickness shows less kinetic damage. This doping method makes use of existing infrastructures in the semiconductor industry and can be extended to other 2D materials and dopant species as well.

Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors

Science.gov (United States)

Hu, Yaoqiao; San Yip, Pak; Tang, Chak Wah; Lau, Kei May; Li, Qiang

2018-04-01

Layered semiconductor molybdenum disulfide (MoS2) has recently emerged as a promising material for flexible electronic and optoelectronic devices because of its finite bandgap and high degree of gate control. Here, we report a hydrogen fluoride (HF) passivation technique for improving the carrier mobility and interface quality of chemical vapor deposited monolayer MoS2 on a SiO2/Si substrate. After passivation, the fabricated MoS2 back-gate transistors demonstrate a more than double improvement in average electron mobility, a reduced gate hysteresis gap of 3 V, and a low interface trapped charge density of ˜5.8 × 1011 cm-2. The improvements are attributed to the satisfied interface dangling bonds, thus a reduction of interface trap states and trapped charges. Surface x-ray photoelectron spectroscopy analysis and first-principles simulation were performed to verify the HF passivation effect. The results here highlight the necessity of a MoS2/dielectric passivation strategy and provides a viable route for enhancing the performance of MoS2 nano-electronic devices.

Three-dimensional nanoporous MoS2 framework decorated with Au nanoparticles for surface-enhanced Raman scattering

Science.gov (United States)

Sheng, Yingqiang; Jiang, Shouzhen; Yang, Cheng; Liu, Mei; Liu, Aihua; Zhang, Chao; Li, Zhen; Huo, Yanyan; Wang, Minghong; Man, Baoyuan

2017-08-01

The three-dimensional (3D) MoS2 decorated with Au nanoparticles (Au NPs) hybrids (3D MoS2-Au NPs) for surface-enhanced Raman scattering (SERS) sensing was demonstrated in this paper. SEM, Raman spectroscopy, TEM, SAED, EDX and XRD were performed to characterize 3D MoS2-Au NPs hybrids. Rhodamine 6G (R6G), fluorescein and gallic acid molecules were used as the probe for the SERS detection of the 3D MoS2-Au NPs hybrids. In addition, we modeled the enhancement of the electric field of MoS2-Au NPs hybrids using Finite-difference time-domain (FDTD) analysis, which can further give assistance to the mechanism understanding of the SERS activity.

Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2

KAUST Repository

Wang, Zhenwei

2016-08-30

A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10(4) . The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.

Balancing the Hydrogen Evolution Reaction, Surface Energetics, and Stability of Metallic MoS2 Nanosheets via Covalent Functionalization.

Science.gov (United States)

Benson, Eric E; Zhang, Hanyu; Schuman, Samuel A; Nanayakkara, Sanjini U; Bronstein, Noah D; Ferrere, Suzanne; Blackburn, Jeffrey L; Miller, Elisa M

2018-01-10

We modify the fundamental electronic properties of metallic (1T phase) nanosheets of molybdenum disulfide (MoS 2 ) through covalent chemical functionalization, and thereby directly influence the kinetics of the hydrogen evolution reaction (HER), surface energetics, and stability. Chemically exfoliated, metallic MoS 2 nanosheets are functionalized with organic phenyl rings containing electron donating or withdrawing groups. We find that MoS 2 functionalized with the most electron donating functional group (p-(CH 3 CH 2 ) 2 NPh-MoS 2 ) is the most efficient catalyst for HER in this series, with initial activity that is slightly worse compared to the pristine metallic phase of MoS 2 . The p-(CH 3 CH 2 ) 2 NPh-MoS 2 is more stable than unfunctionalized metallic MoS 2 and outperforms unfunctionalized metallic MoS 2 for continuous H 2 evolution within 10 min under the same conditions. With regards to the entire studied series, the overpotential and Tafel slope for catalytic HER are both directly correlated with the electron donating strength of the functional group. The results are consistent with a mechanism involving ground-state electron donation or withdrawal to/from the MoS 2 nanosheets, which modifies the electron transfer kinetics and catalytic activity of the MoS 2 nanosheet. The functional groups preserve the metallic nature of the MoS 2 nanosheets, inhibiting conversion to the thermodynamically stable semiconducting state (2H) when mildly annealed in a nitrogen atmosphere. We propose that the electron density and, therefore, reactivity of the MoS 2 nanosheets are controlled by the attached functional groups. Functionalizing nanosheets of MoS 2 and other transition metal dichalcogenides provides a synthetic chemical route for controlling the electronic properties and stability within the traditionally thermally unstable metallic state.

Edge-rich MoS_2 Naonosheets Rooting into Polyaniline Nanofibers as Effective Catalyst for Electrochemical Hydrogen Evolution

International Nuclear Information System (INIS)

Zhang, Nan; Ma, Weiguang; Wu, Tongshun; Wang, Haoyu; Han, Dongxue; Niu, Li

2015-01-01

Graphical abstract: For the first time polyaniline (PANI) was employed as an admirable substrate to construct the hierarchical integrative hybrid with MoS_2 (MoS_2/PANI) for hydrogen evolution reaction (HER), which achieved great active edges exposure and excellent HER performance. - Highlights: • PANI is first applied as the support of MoS_2 for enhanced HER performance. • Great active edges exposure of the hybrid significantly benefits the HER activity. • Superior HER activity and excellent stability of MoS_2/PANI have been achieved. - Abstract: Conductive polymer polyaniline (PANI) with abundant protonated sites which are beneficial to hydrogen evolution reaction (HER), was applied as the support of MoS_2 for enhanced HER performance for the first time. The novel three dimensional (3D) HER catalyst (MoS_2/PANI) was constructed with two dimensional (2D) MoS_2 building blocks rooting into the integrative nanowires. PANI nanofibers acted as excellent substrates for the uniform, dense and approximate vertical growth of MoS_2 nanosheets exposing abundant active edges. Consequently, excellent HER performance has been achieved with a low onset overpotential of 100 mV and a small Tafel slope of 45 mV dec"−"1. Most importantly, it only needed 200 and 247 mV overpotential to reach the current density of 30 and 100 mA/cm"2 respectively. Additionally, MoS_2/PANI has achieved superior stability over other MoS_2-polymer-based HER electrocatalyst. In general, for the first time, employing PANI for the construction of the edge-rich integrative hybrid has successfully achieved an outstanding HER performance.

Controlling magnetism of MoS2 sheets by embedding transition-metal atoms and applying strain.

Science.gov (United States)

Zhou, Yungang; Su, Qiulei; Wang, Zhiguo; Deng, Huiqiu; Zu, Xiaotao

2013-11-14

Prompted by recent experimental achievement of transition metal (TM) atoms substituted in MoS2 nanostructures during growth or saturating existing vacancies (Sun et al., ACS Nano, 2013, 7, 3506; Deepak et al., J. Am. Chem. Soc., 2007, 129, 12549), we explored, via density functional theory, the magnetic properties of a series of 3d TM atoms substituted in a MoS2 sheet, and found that Mn, Fe, Co, Ni, Cu and Zn substitutions can induce magnetism in the MoS2 sheet. The localizing unpaired 3d electrons of TM atoms respond to the introduction of a magnetic moment. Depending on the species of TM atoms, the substituted MoS2 sheet can be a metal, semiconductor or half-metal. Remarkably, the applied elastic strain can be used to control the strength of the spin-splitting of TM-3d orbitals, leading to an effective manipulation of the magnetism of the TM-substituted MoS2 sheet. We found that the magnetic moment of the Mn- and Fe-substituted MoS2 sheets can monotonously increase with the increase of tensile strain, while the magnetic moment of Co-, Ni-, Cu- and Zn-substituted MoS2 sheets initially increases and then decreases with the increase of tensile strain. An instructive mechanism was proposed to qualitatively explain the variation of magnetism with elastic strain. The finding of the magnetoelastic effect here is technologically important for the fabrication of strain-driven spin devices on MoS2 nanostructures, which allows us to go beyond the current scope limited to the spin devices within graphene and BN-based nanostructures.

Magnetism by interfacial hybridization and p-type doping of MoS2 in Fe4N/MoS2 superlattices: A first-principles study

KAUST Repository

Feng, Nan

2014-03-26

Magnetic and electronic properties of Fe4N(111)/MoS 2(√3 × √3) superlattices are investigated by first-principles calculations, considering two models: (I) FeIFe II-S and (II) N-S interfaces, each with six stacking configurations. In model I, strong interfacial hybridization between FeI/Fe II and S results in magnetism of monolayer MoS2, with a magnetic moment of 0.33 μB for Mo located on top of Fe I. For model II, no magnetism is induced due to weak N-S interfacial bonding, and the semiconducting nature of monolayer MoS2 is preserved. Charge transfer between MoS2 and N results in p-type MoS2 with Schottky barrier heights of 0.5-0.6 eV. Our results demonstrate that the interfacial geometry and hybridization can be used to tune the magnetism and doping in Fe4N(111)/MoS2(√3 × √3) superlattices. © 2014 American Chemical Society.

Magnetism by interfacial hybridization and p-type doping of MoS2 in Fe4N/MoS2 superlattices: A first-principles study

KAUST Repository

Feng, Nan; Mi, Wenbo; Cheng, Yingchun; Guo, Zaibing; Schwingenschlö gl, Udo; Bai, Haili

2014-01-01

Magnetic and electronic properties of Fe4N(111)/MoS 2(√3 × √3) superlattices are investigated by first-principles calculations, considering two models: (I) FeIFe II-S and (II) N-S interfaces, each with six stacking configurations. In model I, strong interfacial hybridization between FeI/Fe II and S results in magnetism of monolayer MoS2, with a magnetic moment of 0.33 μB for Mo located on top of Fe I. For model II, no magnetism is induced due to weak N-S interfacial bonding, and the semiconducting nature of monolayer MoS2 is preserved. Charge transfer between MoS2 and N results in p-type MoS2 with Schottky barrier heights of 0.5-0.6 eV. Our results demonstrate that the interfacial geometry and hybridization can be used to tune the magnetism and doping in Fe4N(111)/MoS2(√3 × √3) superlattices. © 2014 American Chemical Society.

Study on the performance of MoS2 modified PTFE composites by molding process

Science.gov (United States)

Ma, Weiqiang; Hou, Genliang; Bi, Song; Li, Ping; Li, Penghui

2017-10-01

MoS2 filled PTFE composites were prepared by cold pressing and sintering molding. The compressive and creep properties of composite materials were analyzed by controlling the size of molded composites during molding. The results show that the composites have the best compressive and creep resistance when the molding pressure is 55 MPa in the MoS2 composites with 15% mass fraction, which is a practical reference for the preparation of MoS2-modified PTFE composites.

The Interface between Gd and Monolayer MoS2: A First-Principles Study

KAUST Repository

Zhang, Xuejing; Mi, Wenbo; Wang, Xiaocha; Cheng, Yingchun; Schwingenschlö gl, Udo

2014-01-01

We analyze the electronic structure of interfaces between two-, four- and six-layer Gd(0001) and monolayer MoS2 by first-principles calculations. Strong chemical bonds shift the Fermi energy of MoS2 upwards into the conduction band. At the surface

Activating basal-plane catalytic activity of two-dimensional MoS2 monolayer with remote hydrogen plasma

KAUST Repository

Cheng, Chia-Chin

2016-09-10

Two-dimensional layered transition metal dichalcogenide (TMD) materials such as Molybdenum disufide (MoS2) have been recognized as one of the low-cost and efficient electrocatalysts for hydrogen evolution reaction (HER). The crystal edges that account for a small percentage of the surface area, rather than the basal planes, of MoS2 monolayer have been confirmed as their active catalytic sites. As a result, extensive efforts have been developing in activating the basal planes of MoS2 for enhancing their HER activity. Here, we report a simple and efficient approach-using a remote hydrogen-plasma process-to creating S-vacancies on the basal plane of monolayer crystalline MoS2; this process can generate high density of S-vacancies while mainly maintaining the morphology and structure of MoS2 monolayer. The density of S-vacancies (defects) on MoS2 monolayers resulted from the remote hydrogen-plasma process can be tuned and play a critical role in HER, as evidenced in the results of our spectroscopic and electrical measurements. The H2-plasma treated MoS2 also provides an excellent platform for systematic and fundamental study of defect-property relationships in TMDs, which provides insights for future applications including electrical, optical and magnetic devices. © 2016 Elsevier Ltd.

Methyl Butanoate Adsorption on MoS2 Surface: A Density Functional Theory Investigation

Directory of Open Access Journals (Sweden)

Prabowo Wahyu Aji Eko

2018-01-01

Full Text Available Methyl butanoate is one of the compound which is obtained from triglyceride molecule. It has hydrocarbon components and hence may produce hydrocarbon through hydrodeoxygenation (HDO or decarbonylation (DCO processes. The first step to uncover the underlying mechanism of HDO or DCO is to find the active site of methyl butanoate adsorption over the catalyst. This study attempts to investigate the active site of methyl butanoate adsorption on MoS2 surface. Stable bonding configuration for methyl butanoate adsorption on MoS2 is investigated by using density functional theory (DFT. This investigation consists of geometry optimisation and adsorption energy calculations. The stable configuration of methyl butanoate adsorption on MoS2 surface is found to be on top of Mo atom in Mo-edge surface.

Plasmon-modulated bistable four-wave mixing signals from a metal nanoparticle-monolayer MoS2 nanoresonator hybrid system

Science.gov (United States)

Li, Jian-Bo; Tan, Xiao-Long; Ma, Jin-Hong; Xu, Si-Qin; Kuang, Zhi-Wei; Liang, Shan; Xiao, Si; He, Meng-Dong; Kim, Nam-Chol; Luo, Jian-Hua; Chen, Li-Qun

2018-06-01

We present a study for the impact of exciton-phonon and exciton-plasmon interactions on bistable four-wave mixing (FWM) signals in a metal nanoparticle (MNP)-monolayer MoS2 nanoresonator hybrid system. Via tracing the FWM response we predict that, depending on the excitation conditions and the system parameters, such a system exhibits ‘U-shaped’ bistable FWM signals. We also map out bistability phase diagrams within the system’s parameter space. Especially, we show that compared with the exciton-phonon interaction, a strong exciton-plasmon interaction plays a dominant role in the generation of optical bistability, and the bistable region will be greatly broadened by shortening the distance between the MNP and the monolayer MoS2 nanoresonator. In the weak exciton-plasmon coupling regime, the impact of exciton-phonon interaction on optical bistability will become obvious. The scheme proposed may be used for building optical switches and logic-gate devices for optical computing and quantum information processing.

Plasmon-modulated bistable four-wave mixing signals from a metal nanoparticle-monolayer MoS2 nanoresonator hybrid system.

Science.gov (United States)

Li, Jian-Bo; Tan, Xiao-Long; Ma, Jin-Hong; Xu, Si-Qin; Kuang, Zhi-Wei; Liang, Shan; Xiao, Si; He, Meng-Dong; Kim, Nam-Chol; Luo, Jian-Hua; Chen, Li-Qun

2018-06-22

We present a study for the impact of exciton-phonon and exciton-plasmon interactions on bistable four-wave mixing (FWM) signals in a metal nanoparticle (MNP)-monolayer MoS 2 nanoresonator hybrid system. Via tracing the FWM response we predict that, depending on the excitation conditions and the system parameters, such a system exhibits 'U-shaped' bistable FWM signals. We also map out bistability phase diagrams within the system's parameter space. Especially, we show that compared with the exciton-phonon interaction, a strong exciton-plasmon interaction plays a dominant role in the generation of optical bistability, and the bistable region will be greatly broadened by shortening the distance between the MNP and the monolayer MoS 2 nanoresonator. In the weak exciton-plasmon coupling regime, the impact of exciton-phonon interaction on optical bistability will become obvious. The scheme proposed may be used for building optical switches and logic-gate devices for optical computing and quantum information processing.

Improving the tribological and corrosive properties of MoS2-based coatings by dual-doping and multilayer construction

Science.gov (United States)

Shang, Kedong; Zheng, Shaoxian; Ren, Siming; Pu, Jibin; He, Dongqing; Liu, Shuan

2018-04-01

The pure MoS2 coating always performs high friction coefficient and short service life when used in high humidity or after long-time storage in humid atmospheric environment. In this study, the MoS2/Pb-Ti composite and MoS2/Pb-Ti multilayer coatings are deposited to improve the corrosion resistance in 3.5 wt% NaCl solution and tribological performance in high humidity condition. The electrochemical impedance spectra and salt spray test shown that the MoS2/Pb-Ti composite and multilayer coatings can inhibit the permeation of oxygen and other corrosive elements, thus resulting a high corrosion resistance. Furthermore, compared with pure MoS2 coating, the tribological performance of the MoS2/Pb-Ti composite and multilayer coatings is also improved significantly owing to the high mechanical properties and compact structure. Moreover, the heterogenous interfaces in MoS2/Pb-Ti multilayer coating play an important role to improve the corrosion resistance and tribological performance of coatings. Overall, the dual-doping and multilayer construction are promising approaches to design the MoS2 coatings as the environmentally adaptive lubricants.

MoS2-InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity.

Science.gov (United States)

Yang, Jaehyun; Kwak, Hyena; Lee, Youngbin; Kang, Yu-Seon; Cho, Mann-Ho; Cho, Jeong Ho; Kim, Yong-Hoon; Jeong, Seong-Jun; Park, Seongjun; Lee, Hoo-Jeong; Kim, Hyoungsub

2016-04-06

We introduce an amorphous indium-gallium-zinc-oxide (a-IGZO) heterostructure phototransistor consisting of solution-based synthetic molybdenum disulfide (few-layered MoS2, with a band gap of ∼1.7 eV) and sputter-deposited a-IGZO (with a band gap of ∼3.0 eV) films as a novel sensing element with a broad spectral responsivity. The MoS2 and a-IGZO films serve as a visible light-absorbing layer and a high mobility channel layer, respectively. Spectroscopic measurements reveal that appropriate band alignment at the heterojunction provides effective transfer of the visible light-induced electrons generated in the few-layered MoS2 film to the underlying a-IGZO channel layer with a high carrier mobility. The photoresponse characteristics of the a-IGZO transistor are extended to cover most of the visible range by forming a heterojunction phototransistor that harnesses a visible light responding MoS2 film with a small band gap prepared through a large-area synthetic route. The MoS2-IGZO heterojunction phototransistors exhibit a photoresponsivity of approximately 1.7 A/W at a wavelength of 520 nm (an optical power of 1 μW) with excellent time-dependent photoresponse dynamics.

Two-dimensional MoS2-graphene hybrid nanosheets for high gravimetric and volumetric lithium storage

Science.gov (United States)

Deng, Yakai; Ding, Lixin; Liu, Qixing; Zhan, Liang; Wang, Yanli; Yang, Shubin

2018-04-01

Two-dimensional (2D) MoS2-graphene (MoS2-G) hybrid is fabricated simultaneously and scalablely with an efficient electrochemical exfoliation approach from the combined bulk MoS2-graphite wafer. The as-prepared 2D MoS2-G hybrid is tightly covered with each other with lateral sizes of 600 nm to few micrometers and can be directly assembled to flexible films for lithium storage. When used as anode material for lithium ion battery, the resultant MoS2-G hybrid film exhibits both high gravimetric (750 mA h g-1 at 50 mA g-1) and volumetric capacities (1200 mA h cm-3 at 0.1 mA cm-2). Such excellent electrochemical performance should attributed to the unique 2D structure and good conductive graphene network, which not only facilitates the diffusion of lithium ions, but also improves the fast transfer of electrons, satisfying the kinetics requirements for rapid lithium storage.

Enhanced performance of lithium-sulfur batteries with an ultrathin and lightweight MoS2/carbon nanotube interlayer

Science.gov (United States)

Yan, Lingjia; Luo, Nannan; Kong, Weibang; Luo, Shu; Wu, Hengcai; Jiang, Kaili; Li, Qunqing; Fan, Shoushan; Duan, Wenhui; Wang, Jiaping

2018-06-01

Ultrathin and lightweight MoS2/carbon nanotube (CNT) interlayers are developed to effectively trap polysulfides in high-performance lithium-sulfur (Li-S) batteries. The MoS2/CNT interlayer is constructed by loading MoS2 nanosheets onto a cross-stacked CNT film. The CNT film with excellent conductivity and superior mechanical properties provides the Li-S batteries with a uniform conductive network, a supporting skeleton for the MoS2 nanosheets, as well as a physical barrier for the polysulfides. Moreover, chemical interactions and bonding between the MoS2 nanosheets and the polysulfides are evident. The electrode with the MoS2/CNT interlayer delivers an attractive specific capacity of 784 mA h g-1 at a high capacity rate of 10 C. In addition, the electrode demonstrates a high initial capacity of 1237 mA h g-1 and a capacity fade as low as -0.061% per cycle over 500 charge/discharge cycles at 0.2 C. The problem of self-discharge can also be suppressed with the introduction of the MoS2/CNT interlayer. The simple fabrication procedure, which is suitable for commercialization, and the outstanding electrochemical performance of the cells with the MoS2/CNT interlayer demonstrate a great potential for the development of high-performance Li-S batteries.

Layer Dependence and Light Tuning Surface Potential of 2D MoS2 on Various Substrates.

Science.gov (United States)

Li, Feng; Qi, Junjie; Xu, Minxuan; Xiao, Jiankun; Xu, Yuliang; Zhang, Xiankun; Liu, Shuo; Zhang, Yue

2017-04-01

Here surface potential of chemical vapor deposition (CVD) grown 2D MoS 2 with various layers is reported, and the effect of adherent substrate and light illumination on surface potential of monolayer MoS 2 are investigated. The surface potential of MoS 2 on Si/SiO 2 substrate decreases from 4.93 to 4.84 eV with the increase in the number of layer from 1 to 4 or more. Especially, the surface potentials of monolayer MoS 2 are strongly dependent on its adherent substrate, which are determined to be 4.55, 4.88, 4.93, 5.10, and 5.50 eV on Ag, graphene, Si/SiO 2 , Au, and Pt substrates, respectively. Light irradiation is introduced to tuning the surface potential of monolayer MoS 2 , with the increase in light intensity, the surface potential of MoS 2 on Si/SiO 2 substrate decreases from 4.93 to 4.74 eV, while increases from 5.50 to 5.56 eV on Pt substrate. The I-V curves on vertical of monolayer MoS 2 /Pt heterojunction show the decrease in current with the increase of light intensity, and Schottky barrier height at MoS 2 /Pt junctions increases from 0.302 to 0.342 eV. The changed surface potential can be explained by trapped charges on surface, photoinduced carriers, charge transfer, and local electric field. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhanced hydrogen generation by hydrolysis of Mg doped with flower-like MoS2 for fuel cell applications

Science.gov (United States)

Huang, Minghong; Ouyang, Liuzhang; Liu, Jiangwen; Wang, Hui; Shao, Huaiyu; Zhu, Min

2017-10-01

In this work, flower-like MoS2 spheres are synthesized via a hydrothermal method and the catalytic activity of the as-prepared and bulk MoS2 on hydrolysis of Mg is systematically investigated for the first time. The Mg-MoS2 composites are prepared by ball milling and the hydrogen generation performances of the composites are investigated in 3.5% NaCl solution. The experimental results suggest that the as-prepared MoS2 exhibits better catalytic effect on hydrolysis of Mg compared to bulk MoS2. In particular, Mg-10 wt% MoS2 (as-prepared) composite milled for 1 h shows the best hydrogen generation properties and releases 90.4% of theoretical hydrogen generation capacity within 1 min at room temperature. The excellent catalytic effect of as-prepared MoS2 may be attributed to the following aspects: three-dimensional flower-like MoS2 architectures improve its dispersibility on Mg particles; make the composite more reactive; hamper the generated Mg(OH)2 from adhering to the surface of Mg; and increase the galvanic corrosion of Mg. In addition, a hydrogen generator based on the hydrolysis reaction of Mg-0.2 wt% MoS2 composite is manufactured and it can supply a maximum hydrogen flow rate of 2.5 L/min. The findings here demonstrate the as-prepared flower-like MoS2 can be a promising catalyst for hydrogen generation from Mg.

Optical properties and band structure of atomically thin MoS2

Science.gov (United States)

Shan, Jie; Mak, Kin Fai; Lee, Changgu; Hone, James; Heinz, Tony

2010-03-01

Atomically thin layers of materials can be expected to exhibit distinct electronic structure and novel properties compared to their bulk counterparts. Layered compounds, for which stable atomically thin samples can be produced, are ideal candidates for such studies. Graphene, a monolayer slice of the graphite crystal, is an illustrative example of both the stability and of the interest and importance of such materials. Here we report a study of thin layers of MoS2, a hexagonal layered bulk semiconductor with an indirect band gap of 1.3 eV. MoS2 samples with layer thickness N down to a monolayer were obtained by mechanical exfoliation. We observed an enhancement of the luminescence quantum yield by more than a factor of 100 in monolayer MoS2 compared to the bulk material. The combination of absorption, photoluminescence, and photoconductivity measurements indicates that a transition to a direct-gap material occurs in the limit of the single MoS2 layer. This result is supported by an earlier first-principles calculation [J. Phys. Chem. C 2007, 111, 16192]. Further, by varying the thickness of the samples, we were able to probe the evolution of the electronic structure for N = 1 -- 6 layers.

Temperature dependence of annealing on the contact resistance of MoS2 with graphene electrodes observed

Science.gov (United States)

Lu, Qin; Fang, Cizhe; Liu, Yan; Shao, Yao; Han, Genquan; Zhang, Jincheng; Hao, Yue

2018-04-01

Two-dimensional (2D) materials are promising candidates for atomically thin nanoelectronics. Among them, MoS2 has attracted considerable attention in the nanoscience and nanotechnology community owing to its unique characteristics including high electron mobility and intrinsic band gap. In this study, we experimentally explored the contact resistances of MoS2 films based on much layered graphene films as electrodes using the circular transmission line model (CTLM). The variation in the chemical composition of the material is thoroughly analyzed by Raman and X-ray photoelectric spectroscopy (XPS) measurements. Experimental results demonstrate that annealing followed by oxygen plasma treatment can effectively improve the contact resistance. Furthermore, the current-voltage curves measured after different annealing temperatures indicate good linear characteristics, which means a marked improvement in electrical property. Calculations show that a relatively low contact resistance of ˜4.177 kΩ (ignoring its size) without back gate voltage in a single-layer graphene/MoS2 structure at an optimal annealing temperature of 500 °C is achieved. This work about the effect of annealing temperature on contact resistance can also be employed for other 2D materials, which lays a foundation for further development of novel 2D material devices.

Structure and tribological properties of MoS2 low friction thin films

Directory of Open Access Journals (Sweden)

Paradecka Agnieszka

2017-01-01

Full Text Available The main aim of the studies was the deposition of the AlCrN film, covered by molybdenum disulphide (MoS2 – based lubricant, on the austenitic steel substrate. The AlCrN and MoS2 layers were deposited by PVD lateral rotating ARC-cathodes (LARC and magnetron sputtering technology on the X6CrNiMoTi17-12-2 respectively. Structural characterizations of the MoS2 thin films have been carried out using SEM (scanning electron microscopy and AFM (atomic force microscopy to determine the surface topography as well as HRTEM (high-resolution transmission electron microscopy and Raman spectroscopy for structural investigations. The tribological wear relationships using ball-on-disc test were specified for surface layers, determining the friction co-efficient and mass loss of the investigated surfaces. Tests of the coatings’ adhesion to the substrate material were made using the scratch test. HRTEM investigation shows an amorphous character of the MoS2 layer. In sliding dry friction conditions, the friction co-efficient for the investigated elements is set in the range between 0.4-0.5. The investigated coating reveals high wear resistance. The coating demonstrated a dense cross-sectional morphology as well as good adhesion to the substrate. The good properties of the PVD AlCrN+MoS2 coatings make them suitable in various engineering and industrial applications.

Visible light responsive Cu2MoS4 nanosheets incorporated reduced graphene oxide for efficient degradation of organic pollutant

Science.gov (United States)

Rameshbabu, R.; Vinoth, R.; Navaneethan, M.; Harish, S.; Hayakawa, Y.; Neppolian, B.

2017-10-01

Visible light active copper molybdenum sulfide (Cu2MoS4) nanosheets were successfully anchored on reduced graphene oxide (rGO) using facile hydrothermal method. During the hydrothermal reaction, reduction of graphene oxide into rGO and the formation of Cu2MoS4 nanosheets were successfully obtained. The charge transfer interaction between the rGO sheets and Cu2MoS4 nanosheets extended the absorption to visible region in comparison with bare Cu2MoS4 nanosheets i.e without rGO sheets. Furthermore, the notable photoluminescence quenching observed for Cu2MoS4/rGO nanocomposite revealed the effective role of rGO towards the significant inhibition of electron-hole pair recombination. The photocatalytic efficiencies of bare Cu2MoS4 and Cu2MoS4/rGO nanocomposite was evaluated for the degradation of methyl orange dye under visible irradiation (λ > 420 nm). A maximum photodegradation efficiency of 99% was achieved for Cu2MoS4/rGO nanocomposite, while only 64% photodegradation was noted for bare Cu2MoS4. The enhanced optical absorption in visible region, high surface area, and low charge carrier recombination in the presence of rGO sheets were the main reasons for the enhancement in photodegardation of MO dye. In addition, the resultant Cu2MoS4/rGO nanocomposite was found to be reusable for five successive cycles without significant loss in its photocatalytic performance.

Is MoS2 a robust material for 2D electronics?

International Nuclear Information System (INIS)

Lorenz, Tommy; Joswig, Jan-Ole; Seifert, Gotthard; Ghorbani-Asl, Mahdi; Heine, Thomas

2014-01-01

A nanoindentation computer experiment has been carried out by means of Born–Oppenheimer molecular-dynamics simulations employing the density-functional based tight-binding method. A free-standing MoS 2 sheet, fixed at a circular support, was indented by a stiff, sharp tip. During this process, the strain on the nanolayer is locally different, with maximum values in the vicinity of the tip. All studied electronic properties—the band gap, the projected density of states, the atomic charges and the quantum conductance through the layer—vary only slightly before they change significantly when the MoS 2 sheet finally is pierced. After strong local deformation due to the indentation process, the electronic conductance in our model still is 80% of its original value. Thus, the electronic structure of single-layer MoS 2 is rather robust upon local deformation. (paper)

Fabrication of a temperature-responsive and recyclable MoS2 nanocatalyst through composting with poly (N-isopropylacrylamide)

Science.gov (United States)

Liu, Yan; Chen, Pengpeng; Nie, Wangyan; Zhou, Yifeng

2018-04-01

A temperature-responsive, recyclable nanocatalyst was fabricated by composting the exfoliated molybdenum disulfide (MoS2) nanosheets with poly (N-isopropylacry lamide) (PNIPAM). The structure and morphology of MoS2/PNIPAM nanocatalyst was fully characterized by Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), Thermogravimetry analysis (TGA), Scanning electron microscope (SEM) and Transmission electron microscopy (TEM). The temperature-responsive properties of the MoS2/PNIPAM nanocatalyst were confirmed by Dynamic Light Scattering (DLS) and Ultraviolet-visible ((UV-vis)) absorption spectroscopy. The catalytic activities of the MoS2/PNIPAM nanocatalyst were studied using the reduction reaction of 4-nitrophenol (4-NP) to 4-aminophenol (4-AP) as the model reaction. Results showed that the catalytic activity of the MoS2/PNIPAM nanocatalyst could be regulated by temperature. Furthermore, when the temperature went higher than the low critical solution temperature (LCST) of PNIPAM, the MoS2/PNIPAM nanocatalyst tended to aggregated to form bulk materials from homogeneous suspension.

Cold cathode emission studies on topographically modified few layer and single layer MoS2 films

Science.gov (United States)

Gaur, Anand P. S.; Sahoo, Satyaprakash; Mendoza, Frank; Rivera, Adriana M.; Kumar, Mohit; Dash, Saroj P.; Morell, Gerardo; Katiyar, Ram S.

2016-01-01

Nanostructured materials, such as carbon nanotubes, are excellent cold cathode emitters. Here, we report comparative field emission (FE) studies on topographically tailored few layer MoS2 films consisting of ⟨0001⟩ plane perpendicular (⊥) to c-axis (i.e., edge terminated vertically aligned) along with planar few layer and monolayer (1L) MoS2 films. FE measurements exhibited lower turn-on field Eto (defined as required applied electric field to emit current density of 10 μA/cm2) ˜4.5 V/μm and higher current density ˜1 mA/cm2, for edge terminated vertically aligned (ETVA) MoS2 films. However, Eto magnitude for planar few layer and 1L MoS2 films increased further to 5.7 and 11 V/μm, respectively, with one order decrease in emission current density. The observed differences in emission behavior, particularly for ETVA MoS2 is attributed to the high value of geometrical field enhancement factor (β), found to be ˜1064, resulting from the large confinement of localized electric field at edge exposed nanograins. Emission behavior of planar few layers and 1L MoS2 films are explained under a two step emission mechanism. Our studies suggest that with further tailoring the microstructure of ultra thin ETVA MoS2 films would result in elegant FE properties.

Facile Fabrication of MoS2-Modified SnO2 Hybrid Nanocomposite for Ultrasensitive Humidity Sensing.

Science.gov (United States)

Zhang, Dongzhi; Sun, Yan'e; Li, Peng; Zhang, Yong

2016-06-08

An ultrasensitive humidity sensor based on molybdenum-disulfide- (MoS2)-modified tin oxide (SnO2) nanocomposite has been demonstrated in this work. The nanostructural, morphological, and compositional properties of an as-prepared MoS2/SnO2 nanocomposite were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), energy dispersive spectrometry (EDS), nitrogen sorption analysis, and Raman spectroscopy, which confirmed its successful preparation and rationality. The sensing characteristics of the MoS2/SnO2 hybrid film device against relative humidity (RH) were investigated at room temperature. The RH sensing results revealed an unprecedented response, ultrafast response/recovery behaviors, and outstanding repeatability. To our knowledge, the sensor response yielded in this work was tens of times higher than that of the existing humidity sensors. Moreover, the MoS2/SnO2 hybrid nanocomposite film sensor exhibited great enhancement in humidity sensing performances as compared to the pure MoS2, SnO2, and graphene counterparts. Furthermore, complex impedance spectroscopy and bode plots were employed to understand the underlying sensing mechanisms of the MoS2/SnO2 nanocomposite toward humidity. The synthesized MoS2/SnO2 hybrid composite was proved to be an excellent candidate for constructing ultrahigh-performance humidity sensor toward various applications.

Magic Clusters of MoS2 by Edge S2 Interdimer Spacing Modulation.

Science.gov (United States)

Ryou, Junga; Kim, Yong-Sung

2018-05-17

Edge atomic and electronic structures of S-saturated Mo-edge triangular MoS 2 nanoclusters are investigated using density functional theory calculations. The edge electrons described by the S 2 -p x p x π* (S 2 -Π x ) and Mo-d xy orbitals are found to interplay to pin the S 2 -Π x Fermi wavenumber at k F = 2/5 as the nanocluster size increases, and correspondingly, the ×5 Peierls edge S 2 interdimer spacing modulation is induced. For the particular sizes of N = 5 n - 2 and 5 n, where N is the number of Mo atoms at one edge representing the nanocluster size and n is a positive integer, the effective ×5 interdimer spacing modulation stabilizes the nanoclusters, which are identified here to be the magic S-saturated Mo-edge triangular MoS 2 nanoclusters. With the S 2 -Π x Peierls gap, the MoS 2 nanoclusters become far-edge S 2 -Π x semiconducting and subedge Mo-d xy metallic as N → ∞.

Chemical Doping Effects in Multilayer MoS2 and its Application in Complementary Inverter.

Science.gov (United States)

Yoo, Hocheon; Hong, Seongin; On, Sungmin; Ahn, Hyungju; Lee, Han-Koo; Hong, Young Ki; Kim, Sunkook; Kim, Jae-Joon

2018-06-19

Multilayer MoS2 has been gaining interests as a new semiconducting material for flexible displays, memory devices, chemical/bio sensors, and photodetectors. However, conventional multilayer MoS2 devices have exhibited limited performances due to the Schottky barrier (SB) and defects. Here, we demonstrate PDPP3T doping effects in multilayer MoS2, which results in improved electrical characteristics (~3.2X mobility compared to the baseline and a high current on/off ratio of 106). Synchrotron-based study using X-ray photoelectron spectroscopy (XPS) and grazing-incidence wide-angle X-ray diffraction (GIWAXD) provides mechanisms that align the edge-on crystallites (97.5 %) of the PDPP3T as well as a larger interaction with MoS2 that leads to dipole and charge transfer effects (at annealing temperature of 300 °C), which support the observed enhancement of the electrical characteristics. Furthermore, we demonstrate a hybrid CMOS inverter using the PDPP3T-doped MoS2 and organic DNTT transistors as n- and p-channels, respectively. The proposed hybrid inverter offers an ultra-high voltage gain of ~205 V/V.

Negative Differential Transconductance in a MoS2 /WSe2 Heterojunction Field Effect Transistor

Science.gov (United States)

Zubair, Ahmad; Nourbakhsh, Amirhasan; Dresselhaus, Mildred; de Gendt, Stefan; Palacios, Tomas

2015-03-01

In this work, we demonstrate the negative transconductance in heterojunction transistors made of two-dimensional materials for the first time. Negative transconductance plays a key role in multi-valued logic/memory and frequency multiplication circuits. The simpler fabrication method of stacked van der Waals heterostructures compared to the conventional bulk semiconductors and large area CVD growth of the layered 2D materials systems makes it a prime candidate for scalable novel applications of their heterostructures. Vertically stacked MoS2/WSe2 heterostructures are fabricated by mechanical exfoliation and an in-house dry transfer process. A two-step process of e-beam lithography and metal deposition (Au on MoS2, and Pd on WSe2) were performed to fabricate n-type MoS2 and ambipolar WSe2 FET. The transfer characteristics on the non-overlapping regions shows the expected characteristics of the n-type, MoS2 FET and ambipolar WSe2 FET. At the same time, the transfer characteristics of the overlapping region between MoS2 and WSe2 show negative differential transconductance. With proper scaling and careful optimization this negative differential transconductance will lead to novel applications.

Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene

Science.gov (United States)

2015-11-13

October 11, 2015 Accepted: November 13, 2015 A rtic le www.acsnano.org © XXXX American Chemical Society A DOI: 10.1021/acsnano.5b06398 ACS Nano XXXX ...interface between EG and MoS2 is highlighted in red. ACS Nano Article DOI: 10.1021/acsnano.5b06398 ACS Nano XXXX , XXX, XXX−XXX B The as-grown MoS2/EG...orientations. ACS Nano Article DOI: 10.1021/acsnano.5b06398 ACS Nano XXXX , XXX, XXX−XXX C nature of EG give rise to the inversion of the relative DOS at

Facile Synthesis of In–Situ Nitrogenated Graphene Decorated by Few–Layer MoS2 for Hydrogen Evolution Reaction

International Nuclear Information System (INIS)

Dai, Xiaoping; Li, Zhanzhao; Du, Kangli; Sun, Hui; Yang, Ying; Zhang, Xin; Ma, Xingyu; Wang, Jie

2015-01-01

Graphical abstract: In–situ nitrogenated graphene–few layer MoS 2 composites are fabricated by combinating chemical and hydrothermal reduction. The resulting MoS 2 /N–rGO–HA by N 2 H 4 ·H 2 O and NH 3 ·H 2 O as co-reductant exhibits high activity and remarkable stability for hydrogen evolution reaction (HER). The excellent electro-catalytic performance is ascribed to the synergistic effects, confinement effects and highly dispersed MoS 2 nanosheets on N-doping rGO. Display Omitted -- Highlights: • In–situ nitrogenated graphene–few layer MoS 2 composites are fabricated by combinating chemical and hydrothermal co-reduction. • The resulting MoS 2 /N–rGO–HA exhibits high activity and remarkable stability for HER. • The excellent electro-catalytic performance is ascribed to the synergistic effects, confinement effects and highly dispersed MoS 2 nanosheets on N-doping rGO. -- Abstract: A facile one–step synthetic strategy by combinating chemical and hydrothermal reduction of graphene oxide and Mo precursor is proposed to fabricate in–situ nitrogenated graphene–few layer MoS 2 composite (MoS 2 /N–rGO–HA) for hydrogen evolution reaction (HER). The N–doping graphene nanosheets and highly dispersed MoS 2 nanosheets by ammonia and hydrozine as co–reductant have greatly promoted the N content, concentrations of pyridinic and graphitic N, the electron transport in electrodes, and assure high catalytic efficiency. The MoS 2 /N–rGO–HA composite exhibits extremely high activity in acidic solutions with a small onset potential of 100 mV and Tafel slope of 45 mV/dec, as well as a current density about 32.4 mA cm −2 at overpotential about 0.2 V. Moreover, such MoS 2 /N–rGO–HA electroncatalyst also shows an excellent stability during 1000 cycles with negligible loss of the cathodic current. This facile hydrothermal method could provide a promising strategy for the synthesis of in–situ nitrogen–doping graphene sheets and few�

Exciton-dominant Electroluminescence from a Diode of Monolayer MoS2

Science.gov (United States)

2014-05-14

injected electrons and holes, is a reliable technique to study exciton recombination processes in monolayer MoS2, including val- ley and spin excitation...temperature. After superimposing a white light scattering image of the de - vice, we find that the electroluminescence is localized at the edge of the...We find the emerged feature (labeled NX) peaks at 550 nm with energy of 2.255 eV. In low dimensional system, like monolayer MoS2, Coulomb interactions

Recent advances in MoS2 nanostructured materials for energy and environmental applications - A review

Science.gov (United States)

Theerthagiri, J.; Senthil, R. A.; Senthilkumar, B.; Reddy Polu, Anji; Madhavan, J.; Ashokkumar, Muthupandian

2017-08-01

Molybdenum disulfide (MoS2), a layered transition metal dichalcogenide with an analogous structure to graphene, has attracted enormous attention worldwide owing to its use in a variety of applications such as energy storage, energy conversion, environmental remediation and sensors. MoS2 and graphene have almost similar functional properties such as high charge carrier transport, high wear resistance and good mechanical strength and friction. However, MoS2 is advantageous over graphene due to its low-cost, abundancy, tailorable morphologies and tuneable band gap with good visible light absorption properties. In this review, we have focussed mainly on recent advances in MoS2 nanostructured materials for the applications in the broad area of energy and environment. Special attention has been paid to their applications in dye-sensitized solar cells, supercapacitor, Li-ion battery, hydrogen evolution reaction, photocatalysis for the degradation of organic pollutants, chemical/bio sensors and gas sensors. Finally, the challenges to design MoS2 nanostructures suitable for energy and environmental applications are also highlighted.

Salt-assisted clean transfer of continuous monolayer MoS2 film for hydrogen evolution reaction

Science.gov (United States)

Cho, Heung-Yeol; Nguyen, Tri Khoa; Ullah, Farman; Yun, Jong-Won; Nguyen, Cao Khang; Kim, Yong Soo

2018-03-01

The transfer of two-dimensional (2D) materials from one substrate to another is challenging but of great importance for technological applications. Here, we propose a facile etching and residue-free method for transferring a large-area monolayer MoS2 film continuously grown on a SiO2/Si by chemical vapor deposition. Prior to synthesis, the substrate is dropped with water- soluble perylene-3, 4, 9, 10-tetracarboxylic acid tetrapotassium salt (PTAS). The as-grown MoS2 on the substrate is simply dipped in water to quickly dissolve PTAS to yield the MoS2 film floating on the water surface, which is subsequently transferred to the desired substrate. The morphological, optical and X-ray photoelectron spectroscopic results show that our method is useful for fast and clean transfer of the MoS2 film. Specially, we demonstrate that monolayer MoS2 film transferred onto a conducting substrate leads to excellent performance for hydrogen evolution reaction with low overpotential (0.29 V vs the reversible hydrogen electrode) and Tafel slope (85.5 mV/decade).

Controllable Growth of Large-Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin Film

Science.gov (United States)

Lin, Ziyuan; Zhao, Yuda; Zhou, Changjian; Zhong, Ren; Wang, Xinsheng; Tsang, Yuen Hong; Chai, Yang

2015-12-01

Two-dimensional MoS2 is a promising material for future nanoelectronics and optoelectronics. It has remained a great challenge to grow large-size crystalline and high surface coverage monolayer MoS2. In this work, we investigate the controllable growth of monolayer MoS2 evolving from triangular flakes to continuous thin films by optimizing the concentration of gaseous MoS2, which has been shown a both thermodynamic and kinetic growth factor. A single-crystal monolayer MoS2 larger than 300 μm was successfully grown by suppressing the nuclei density and supplying sufficient source. Furthermore, we present a facile process of transferring the centimeter scale MoS2 assisted with a copper thin film. Our results show the absence of observable residues or wrinkles after we transfer MoS2 from the growth substrates onto flat substrates using this technique, which can be further extended to transfer other two-dimensional layered materials.

2D nanosheet molybdenum disulphide (MoS2) modified electrodes explored towards the hydrogen evolution reaction

Science.gov (United States)

Rowley-Neale, Samuel J.; Brownson, Dale A. C.; Smith, Graham C.; Sawtell, David A. G.; Kelly, Peter J.; Banks, Craig E.

2015-10-01

We explore the use of two-dimensional (2D) MoS2 nanosheets as an electrocatalyst for the Hydrogen Evolution Reaction (HER). Using four commonly employed commercially available carbon based electrode support materials, namely edge plane pyrolytic graphite (EPPG), glassy carbon (GC), boron-doped diamond (BDD) and screen-printed graphite electrodes (SPE), we critically evaluate the reported electrocatalytic performance of unmodified and MoS2 modified electrodes towards the HER. Surprisingly, current literature focuses almost exclusively on the use of GC as an underlying support electrode upon which HER materials are immobilised. 2D MoS2 nanosheet modified electrodes are found to exhibit a coverage dependant electrocatalytic effect towards the HER. Modification of the supporting electrode surface with an optimal mass of 2D MoS2 nanosheets results in a lowering of the HER onset potential by ca. 0.33, 0.57, 0.29 and 0.31 V at EPPG, GC, SPE and BDD electrodes compared to their unmodified counterparts respectively. The lowering of the HER onset potential is associated with each supporting electrode's individual electron transfer kinetics/properties and is thus distinct. The effect of MoS2 coverage is also explored. We reveal that its ability to catalyse the HER is dependent on the mass deposited until a critical mass of 2D MoS2 nanosheets is achieved, after which its electrocatalytic benefits and/or surface stability curtail. The active surface site density and turn over frequency for the 2D MoS2 nanosheets is determined, characterised and found to be dependent on both the coverage of 2D MoS2 nanosheets and the underlying/supporting substrate. This work is essential for those designing, fabricating and consequently electrochemically testing 2D nanosheet materials for the HER.We explore the use of two-dimensional (2D) MoS2 nanosheets as an electrocatalyst for the Hydrogen Evolution Reaction (HER). Using four commonly employed commercially available carbon based electrode

Electronic and magnetic properties of 3d-metal trioxides superhalogen cluster-doped monolayer MoS2: A first-principles study

International Nuclear Information System (INIS)

Li, Dan; Niu, Yuan; Zhao, Hongmin; Liang, Chunjun; He, Zhiqun

2014-01-01

Utilizing first-principle calculations, the structural, electronic, and magnetic properties of monolayer MoS 2 doped with 3d transition-metal (TM) atoms and 3d-metal trioxides (TMO 3 ) superhalogen clusters are investigated. 3d-metal TMO 3 superhalogen cluster-doped monolayers MoS 2 almost have negative formation energies except CoO 3 and NiO 3 doped monolayer MoS 2 , which are much lower than those of 3d TM-doped structures. 3d-metal TMO 3 superhalogen clusters are more easily embedded in monolayer MoS 2 than 3d-metal atoms. MnO 3 , FeO 3 , CoO 3 , and NiO 3 incorporated into monolayer MoS 2 are magnetic, and the total magnetic moments are approximately 1.0, 2.0, 3.0, and 4.0 μB per supercell, respectively. MnO 3 and FeO 3 incorporated into monolayer MoS 2 become semiconductors, whereas CoO 3 and NiO 3 incorporated into monolayer MoS 2 become half-metallic. Our studies demonstrate that the half-metallic ferromagnetic nature of 3d-metal TMO 3 superhalogen clusters-doped monolayer MoS 2 has a great potential for MoS 2 -based spintronic device applications. -- Highlights: •TMO 3 superhalogen clusters incorporated into monolayer MoS 2 were investigated. •TMO 3 doped structures have much lower formation energies than TM doped structures. •TMO 3 cluster-doped MoS 2 are thermodynamically favored. •Significant charge transfers between O atoms and Mo atoms in TMO 3 doped structures. •MnO 3 , FeO 3 , CoO 3 , and NiO 3 incorporated into monolayer MoS 2 are magnetic.

Impact of Microstructure on MoS2 Oxidation and Friction.

Science.gov (United States)

Curry, John F; Wilson, Mark A; Luftman, Henry S; Strandwitz, Nicholas C; Argibay, Nicolas; Chandross, Michael; Sidebottom, Mark A; Krick, Brandon A

2017-08-23

This work demonstrates the role of microstructure in the friction and oxidation behavior of the lamellar solid lubricant molybdenum disulfide (MoS 2 ). We report on systematic investigations of oxidation and friction for two MoS 2 films with distinctively different microstructures-amorphous and planar/highly-ordered-before and after exposure to atomic oxygen (AO) and high-temperature (250 °C) molecular oxygen. A combination of experimental tribology, molecular dynamics simulations, X-ray photoelectron spectroscopy (XPS), and high-sensitivity low-energy ion scattering (HS-LEIS) was used to reveal new insights about the links between structure and properties of these widely utilized low-friction materials. Initially, ordered MoS 2 films showed a surprising resistance to both atomic and molecular oxygens (even at elevated temperature), retaining characteristic low friction after exposure to extreme oxidative environments. XPS shows comparable oxidation of both coatings via AO; however, monolayer resolved compositional depth profiles from HS-LEIS reveal that the microstructure of the ordered coatings limits oxidation to the first atomic layer.

Remarkably enhanced photocatalytic hydrogen evolution over MoS2 nanosheets loaded on uniform CdS nanospheres

Science.gov (United States)

Chai, Bo; Xu, Mengqiu; Yan, Juntao; Ren, Zhandong

2018-02-01

The MoS2/CdS composites with layered MoS2 loaded on uniform CdS nanospheres were synthesized by a two-step process combination hydrothermal and solvothermal treatments, and then applied in photocatalytic hydrogen evolution under visible light irradiation. The as-prepared samples were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectrometer (EDS), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), Raman spectra, UV-vis diffuse reflectance absorption spectra (UV-DRS), nitrogen adsorption-desorption measurement, photoluminescence spectra (PL) and photoelectrochemical tests. The effects of loading contents of MoS2 in the composites on the photocatalytic H2 evolution activity were comparatively investigated with 0.45 mol L-1 Na2S and 0.55 mol L-1 Na2SO3 as sacrificial agents. The results showed that the 5 wt% MoS2/CdS composite could achieve the highest photocatalytic H2 evolution rate of 372 μmol h-1 and apparent quantum efficiency (AQE) about 7.31% under 420 nm monochromatic light irradiation. The remarkably enhanced photocatalytic activity of MoS2/CdS composite could be attributed to the effective transfer and separation of photogenerated charge carriers, and MoS2 being as a cocatalyst to facilitating photocatalytic H2 evolution reaction. A tentative mechanism of MoS2/CdS composites as photocatalysts for H2 evolution was proposed.

Mechanistic Insight into the Stability of HfO2-Coated MoS2 Nanosheet Anodes for Sodium Ion Batteries

KAUST Repository

Ahmed, Bilal; Anjum, Dalaver H.; Hedhili, Mohamed N.; Alshareef, Husam N.

2015-01-01

It is demonstrated for the first time that surface passivation of 2D nanosheets of MoS2 by an ultrathin and uniform layer of HfO2 can significantly improve the cyclic performance of sodium ion batteries. After 50 charge/discharge cycles, bare MoS2 and HfO2 coated MoS2 electrodes deliver the specific capacity of 435 and 636 mAh g-1, respectively, at current density of 100 mA g-1. These results imply that batteries using HfO2 coated MoS2 anodes retain 91% of the initial capacity; in contrast, bare MoS2 anodes retain only 63%. Also, HfO2 coated MoS2 anodes show one of the highest reported capacity values for MoS2. Cyclic voltammetry and X-ray photoelectron spectroscopy results suggest that HfO2 does not take part in electrochemical reaction. The mechanism of capacity retention with HfO2 coating is explained by ex situ transmission electron microscope imaging and electrical impedance spectroscopy. It is illustrated that HfO2 acts as a passivation layer at the anode/electrolyte interface and prevents structural degradation during charge/discharge process. Moreover, the amorphous nature of HfO2 allows facile diffusion of Na ions. These results clearly show the potential of HfO2 coated MoS2 anodes, which performance is significantly higher than previous reports where bulk MoS2 or composites of MoS2 with carbonaceous materials are used. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Mechanistic Insight into the Stability of HfO2-Coated MoS2 Nanosheet Anodes for Sodium Ion Batteries

KAUST Repository

Ahmed, Bilal

2015-06-01

It is demonstrated for the first time that surface passivation of 2D nanosheets of MoS2 by an ultrathin and uniform layer of HfO2 can significantly improve the cyclic performance of sodium ion batteries. After 50 charge/discharge cycles, bare MoS2 and HfO2 coated MoS2 electrodes deliver the specific capacity of 435 and 636 mAh g-1, respectively, at current density of 100 mA g-1. These results imply that batteries using HfO2 coated MoS2 anodes retain 91% of the initial capacity; in contrast, bare MoS2 anodes retain only 63%. Also, HfO2 coated MoS2 anodes show one of the highest reported capacity values for MoS2. Cyclic voltammetry and X-ray photoelectron spectroscopy results suggest that HfO2 does not take part in electrochemical reaction. The mechanism of capacity retention with HfO2 coating is explained by ex situ transmission electron microscope imaging and electrical impedance spectroscopy. It is illustrated that HfO2 acts as a passivation layer at the anode/electrolyte interface and prevents structural degradation during charge/discharge process. Moreover, the amorphous nature of HfO2 allows facile diffusion of Na ions. These results clearly show the potential of HfO2 coated MoS2 anodes, which performance is significantly higher than previous reports where bulk MoS2 or composites of MoS2 with carbonaceous materials are used. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts

Science.gov (United States)

Renteria, J.; Samnakay, R.; Rumyantsev, S. L.; Jiang, C.; Goli, P.; Shur, M. S.; Balandin, A. A.

2014-04-01

We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS2 transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS2 transistors, are 2 × 1019 eV-1cm-3 and 2.5 × 1020 eV-1cm-3 for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS2 transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS2 and other van der Waals materials.

Effects of adding metals to MoS2 in a ytterbium doped Q-switched fiber laser

Science.gov (United States)

Khaleque, Abdul; Liu, Liming

2018-03-01

Molybdenum disulfide (MoS2) is widely used in lubricants, metallic alloys and in electronic and optical components. It is also used as saturable absorbers (SAs) in lasers (e.g. fiber lasers): a simple deposition of MoS2 on the fiber end can create a saturable absorber without the necessity of extensive alignment of the optical beam. In this article, we study the effects of adding different metals (Cr, Au, and Al) to MoS2 in a ytterbium (Yb)-doped Q-switched fiber laser. Experimental results show that the addition of a thin layer of gold and aluminium can reduce pulse durations to about 5.8 μs and 8.5 μs, respectively, compared with pure MoS2 with pulse duration of 12 μs. Experimental analysis of the combined metal and MoS2 based composite SAs can be useful in fiber laser applications where it may also find applications in medical, three dimensional (3D) active imaging and dental applications.

Moiré-related in-gap states in a twisted MoS2/graphite heterojunction

KAUST Repository

Lu, Chun-I; Butler, Christopher J.; Huang, Jing-Kai; Chu, Yu-Hsun; Yang, Hung-Hsiang; Wei, Ching-Ming; Li, Lain-Jong; Lin, Minn-Tsong

2017-01-01

the band gap range of MoS2, and by comparing the tunneling spectra from MoS2 grains of varying rotation with respect to the substrate, show that these features have small but non-negligible dependence on the moiré superstructure. Furthermore, within a

A robust free-standing MoS_2/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) film for supercapacitor applications

International Nuclear Information System (INIS)

Ge, Yu; Jalili, Rouhollah; Wang, Caiyun; Zheng, Tian; Chao, Yunfeng; Wallace, Gordon G.

2017-01-01

Graphical abstract: MoS_2/PEDOT:PSS hybrid film with high robustness and flexibility demonstrated an excellent capacitive performance in the form of an all-solid-state supercapacitor. - Highlights: • A robust free-standing MoS_2/PEDOT:PSS film has been prepared via a simple vacuum filtration method. • MoS_2/PEDOT hybrid film displays remarkably improved mechanical robustness and flexibility. • MoS_2/PEDOT electrode exhibits high volumetric capacitance and good cycling stability in aqueous electrolyte. • Flexible MoS_2/PEDOT electrode can retain its capacitive performance over 1000 bending cycles in an all-solid-state supercapacitor. - Abstract: Two-dimensional molybdenum disulfide (MoS_2) is a promising energy storage material due to its high surface area and unique electronic structure. Free-standing flexible MoS_2-based electrode is of importance for use in flexible energy storage devices, whereas there are limited reports available. In this work we developed a robust hybrid film, MoS_2 incorporated with highly conductive poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate). This free-standing film possesses excellent mechanical properties with a fracture strength of 18.0 MPa and a Young’s modulus of 2.0 GPa. It can deliver a large volumetric capacitance of 141.4 F cm"−"3, a high volumetric energy density of 4.9 mWh cm"−"3, and a capacitance retention rate of 98.6% after 5000 charge/discharge cycles. This film has demonstrated its application in an all-solid-state bendable supercapacitor as well.

Indented Cu2MoS4 nanosheets with enhanced electrocatalytic and photocatalytic activities realized through edge engineering.

Science.gov (United States)

Chen, Bang-Bao; Ma, De-Kun; Ke, Qing-Ping; Chen, Wei; Huang, Shao-Ming

2016-03-07

Edges often play a role as active centers for catalytic reactions in some nanomaterials. Therefore it is highly desirable to enhance catalytic activity of a material through modulating the microstructure of the edges. However, the study associated with edge engineering is less investigated and still at its preliminary stage. Here we report that Cu2MoS4 nanosheets with indented edges can be fabricated through a simple chemical etching route at room temperature, using Cu2MoS4 nanosheets with flat ones as sacrifice templates. Taking the electrocatalytic hydrogen evolution reaction (HER), photocatalytic degradation of rhodamine B (RhB) and conversion of benzyl alcohol as examples, the catalytic activity of Cu2MoS4 indented nanosheets (INSs) obtained through edge engineering was comparatively studied with those of Cu2MoS4 flat nanosheets (FNSs) without any modification. The photocatalytic tests revealed that the catalytic active sites of Cu2MoS4 nanosheets were associated with their edges rather than basal planes. Cu2MoS4 INSs were endowed with larger electrochemically active surface area (ECSA), more active edges and better hydrophilicity through the edge engineering. As a result, the as-fabricated Cu2MoS4 INSs exhibited an excellent HER activity with a small Tafel slope of 77 mV dec(-1), which is among the best records for Cu2MoS4 catalysts. The present work demonstrated the validity of adjusting catalytic activity of the material through edge engineering and provided a new strategy for designing and developing highly efficient catalysts.

Phonon-limited mobility in n-type single-layer MoS2 from first principles

DEFF Research Database (Denmark)

Kaasbjerg, Kristen; Thygesen, Kristian S.; Jacobsen, Karsten W.

2012-01-01

We study the phonon-limited mobility in intrinsic n-type single-layer MoS2 for temperatures T > 100 K. The materials properties including the electron-phonon interaction are calculated from first principles and the deformation potentials and Frohlich interaction in single-layer MoS2 are established...... to recent experimental findings for the mobility in single-layer MoS2 (similar to 200 cm(2)V(-1)s(-1)), our results indicate that mobilities close to the intrinsic phonon-limited mobility can be achieved in two-dimensional materials via dielectric engineering that effectively screens static Coulomb...

Moiré-related in-gap states in a twisted MoS2/graphite heterojunction

KAUST Repository

Lu, Chun-I

2017-07-21

This report presents a series of low-temperature (4.5 K) scanning tunneling microscopy and spectroscopy experimental results on monolayer MoS2 deposited on highly oriented pyrolytic graphite using chemical vapor deposition. To reveal the detailed connection between atomic morphology and conductivity in twisted MoS2/graphite heterojunctions, we employ high-sensitivity tunneling spectroscopy measurements by choosing a reduced tip-sample distance. We discern previously unobserved conductance peaks within the band gap range of MoS2, and by comparing the tunneling spectra from MoS2 grains of varying rotation with respect to the substrate, show that these features have small but non-negligible dependence on the moiré superstructure. Furthermore, within a single moiré supercell, atomically resolved tunneling spectroscopy measurements show that the spectra between the moiré high and low areas are also distinct. These in-gap states are shown to have an energy shift attributed to their local lattice strain, matching corresponding behavior of the conduction band edge, and we therefore infer that these features are intrinsic to the density of states, rather than experimental artifacts, and attribute them to the twisted stacking and local strain energy of the MoS2/graphite heterointerface.

Role of oxygen adsorption in modification of optical and surface electronic properties of MoS2

Science.gov (United States)

Shakya, Jyoti; Kumar, Sanjeev; Mohanty, Tanuja

2018-04-01

In this work, the effect of surface oxidation of molybdenum disulfide (MoS2) nanosheets induced by hydrogen peroxide (H2O2) on the work function and bandgap of MoS2 has been investigated for tuning its optical and electronic properties. Transmission electron microscopy studies reveal the existence of varying morphologies of few layers of MoS2 as well as quantum dots due to the different absorbing effects of two mixed solvents on MoS2. The X-ray diffraction, electron paramagnetic resonance, and Raman studies indicate the presence of physical as well as chemical adsorption of oxygen atoms in MoS2. The photoluminescence spectra show the tuning of bandgap arising from the passivation of trapping centers leading to radiative recombination of excitons. The value of work function obtained from scanning Kelvin probe microscopy of MoS2 in mixed solvents of H2O2 and N-methyl-2-pyrrolidone increases with an increase in the concentration of H2O2. A linear relationship could be established between H2O2 content in mixed solvent and measured values of work function. This work gives the alternative route towards the commercial use of defect engineered transition metal dichalcogenide materials in diverse fields.

Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices

Science.gov (United States)

Wu, Zijin; Wang, Tongtong; Sun, Changqi; Liu, Peitao; Xia, Baorui; Zhang, Jingyan; Liu, Yonggang; Gao, Daqiang

2017-12-01

Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching behavior. Recent studies have also indicated that the doping of N element can reduce the band gap of MoS2 nanosheets, which is conducive to improving the conductivity of the material. Therefore, in this paper, we prepared N-doped MoS2 nanosheets and then fabricated N-doped MoS2-PVP nanocomposite films by spin coating. Finally, the resistive memory [C. Tan et al., Chem. Soc. Rev. 44, 2615 (2015)], device with ITO/N-doped MoS2-PVP/Pt structure was fabricated. Study on the I-V characteristics shows that the device has excellent resistance switching effect. It is worth mentioning that our device possesses a threshold voltage of 0.75 V, which is much better than 3.5 V reported previously for the undoped counterparts. The above research shows that N-doped MoS2-PVP nanocomposite films can be used as the active layer of resistive switching memory devices, and will make the devices have better performance.

Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging

International Nuclear Information System (INIS)

Garcia, Alejandra; Raya, Andres M.; Mariscal, Marcelo M.; Esparza, Rodrigo; Herrera, Miriam; Molina, Sergio I.; Scavello, Giovanni; Galindo, Pedro L.; Jose-Yacaman, Miguel; Ponce, Arturo

2014-01-01

In this work we examined MoS 2 sheets by aberration-corrected scanning transmission electron microscopy (STEM) at three different energies: 80, 120 and 200 kV. Structural damage of the MoS 2 sheets has been controlled at 80 kV according a theoretical calculation based on the inelastic scattering of the electrons involved in the interaction electron–matter. The threshold energy for the MoS 2 material has been found and experimentally verified in the microscope. At energies higher than the energy threshold we show surface and edge defects produced by the electron beam irradiation. Quantitative analysis at atomic level in the images obtained at 80 kV has been performed using the experimental images and via STEM simulations using SICSTEM software to determine the exact number of MoS 2 layers. - Highlights: • MoS 2 sheets were exfoliated by using hydrogen gas flow to separate the MoS 2 layers. • The optimum energy to avoid structural damage was calculated. • Cs-corrected STEM imaging was used to obtain atomic resolution images. • Three energies were used in STEM imaging: 80, 120 and 200 kV. • A quantitative method for determining the number of layers has been applied

Unexpected optical limiting properties from MoS2 nanosheets modified by a semiconductive polymer.

Science.gov (United States)

Zhao, Min; Chang, Meng-Jie; Wang, Qiang; Zhu, Zhen-Tong; Zhai, Xin-Ping; Zirak, Mohammad; Moshfegh, Alireza Z; Song, Ying-Lin; Zhang, Hao-Li

2015-08-07

Direct solvent exfoliation of bulk MoS2 with the assistance of poly(3-hexylthiophene) (P3HT) produces a novel two-dimensional organic/inorganic semiconductor hetero-junction. The obtained P3HT-MoS2 nanohybrid exhibits unexpected optical limiting properties in contrast to the saturated absorption behavior of both P3HT and MoS2, showing potential in future photoelectric applications.

Magnetoresistance in molybdenite (MoS2) crystals

International Nuclear Information System (INIS)

Chakraborty, B.R.; Dutta, A.K.

1975-01-01

The principal magnetoresistance ratios of molybdenite (MoS 2 ), the naturally occurring semiconducting crystal, have been investigated at magnetic fields ranging from 4.5 KOe and within the temperature range 300 0 K to 700 0 K. Unlike some previous observations, magnetoresistance has been found to be negative. (author)

Large-area MoS2 grown using H2S as the sulphur source

International Nuclear Information System (INIS)

Dumcenco, Dumitru; Ovchinnikov, Dmitry; Lopez Sanchez, Oriol; Kis, Andras; Gillet, Philippe; Alexander, Duncan T L; Lazar, Sorin; Radenovic, Aleksandra

2015-01-01

We report on the growth of molybdenum disulphide (MoS 2 ) using H 2 S as a gas-phase sulfur precursor that allows controlling the domain growth direction of domains in both vertical (perpendicular to the substrate plane) and horizontal (within the substrate plane), depending on the H 2 S:H 2 ratio in the reaction gas mixture and temperature at which they are introduced during growth. Optical and atomic force microscopy measurements on horizontal MoS 2 demonstrate the formation of monolayer triangular-shape domains that merge into a continuous film. Scanning transmission electron microscopy of monolayer MoS 2 shows a regular atomic structure with a hexagonal symmetry. Raman and photoluminescence spectra confirm the monolayer thickness of the material. Field-effect transistors fabricated on MoS 2 domains that are transferred onto Si/SiO 2 substrates show a mobility similar to previously reported exfoliated and chemical vapor deposition-grown materials. (paper)

Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics.

Science.gov (United States)

Wu, Wenzhuo; Wang, Lei; Li, Yilei; Zhang, Fan; Lin, Long; Niu, Simiao; Chenet, Daniel; Zhang, Xian; Hao, Yufeng; Heinz, Tony F; Hone, James; Wang, Zhong Lin

2014-10-23

The piezoelectric characteristics of nanowires, thin films and bulk crystals have been closely studied for potential applications in sensors, transducers, energy conversion and electronics. With their high crystallinity and ability to withstand enormous strain, two-dimensional materials are of great interest as high-performance piezoelectric materials. Monolayer MoS2 is predicted to be strongly piezoelectric, an effect that disappears in the bulk owing to the opposite orientations of adjacent atomic layers. Here we report the first experimental study of the piezoelectric properties of two-dimensional MoS2 and show that cyclic stretching and releasing of thin MoS2 flakes with an odd number of atomic layers produces oscillating piezoelectric voltage and current outputs, whereas no output is observed for flakes with an even number of layers. A single monolayer flake strained by 0.53% generates a peak output of 15 mV and 20 pA, corresponding to a power density of 2 mW m(-2) and a 5.08% mechanical-to-electrical energy conversion efficiency. In agreement with theoretical predictions, the output increases with decreasing thickness and reverses sign when the strain direction is rotated by 90°. Transport measurements show a strong piezotronic effect in single-layer MoS2, but not in bilayer and bulk MoS2. The coupling between piezoelectricity and semiconducting properties in two-dimensional nanomaterials may enable the development of applications in powering nanodevices, adaptive bioprobes and tunable/stretchable electronics/optoelectronics.

Growth of centimeter-scale atomically thin MoS2 films by pulsed laser deposition

Directory of Open Access Journals (Sweden)

Gene Siegel

2015-05-01

Full Text Available We are reporting the growth of single layer and few-layer MoS2 films on single crystal sapphire substrates using a pulsed-laser deposition technique. A pulsed KrF excimer laser (wavelength: 248 nm; pulse width: 25 ns was used to ablate a polycrystalline MoS2 target. The material thus ablated was deposited on a single crystal sapphire (0001 substrate kept at 700 °C in an ambient vacuum of 10−6 Torr. Detailed characterization of the films was performed using atomic force microscopy (AFM, Raman spectroscopy, UV-Vis spectroscopy, and photoluminescence (PL measurements. The ablation of the MoS2 target by 50 laser pulses (energy density: 1.5 J/cm2 was found to result in the formation of a monolayer of MoS2 as shown by AFM results. In the Raman spectrum, A1g and E12g peaks were observed at 404.6 cm−1 and 384.5 cm−1 with a spacing of 20.1 cm−1, confirming the monolayer thickness of the film. The UV-Vis absorption spectrum exhibited two exciton absorption bands at 672 nm (1.85 eV and 615 nm (2.02 eV, with an energy split of 0.17 eV, which is in excellent agreement with the theoretically predicted value of 0.15 eV. The monolayer MoS2 exhibited a PL peak at 1.85 eV confirming the direct nature of the band-gap. By varying the number of laser pulses, bi-layer, tri-layer, and few-layer MoS2 films were prepared. It was found that as the number of monolayers (n in the MoS2 films increases, the spacing between the A1g and E12g Raman peaks (Δf increases following an empirical relation, Δ f = 26 . 45 − 15 . 42 1 + 1 . 44 n 0 . 9 cm − 1 .

Half-metallic ferromagnetism prediction in MoS2-based two-dimensional superlattice from first-principles

Science.gov (United States)

Wen, Yan-Ni; Gao, Peng-Fei; Xia, Ming-Gang; Zhang, Sheng-Li

2018-03-01

Half-metallic ferromagnetism (HMFM) has great potential application in spin filter. However, it is extremely rare, especially in two-dimensional (2D) materials. At present, 2D materials have drawn international interest in spintronic devices. Here, we use ab initio density functional theory (DFT) calculations to study the structural stability and electrical and magnetic properties of the MoS2-based 2D superlattice formed by inserting graphene hexagonal ring in 6 × 6 × 1 MoS2 supercell. Two kinds of structures with hexagonal carbon ring were predicted with structural stability and were shown HMFM. The two structures combine the spin transport capacity of graphene with the magnetism of the defective 2D MoS2. And they have strong covalent bonding between the C and S or Mo atoms near the interface. This work is very useful to help us to design reasonable MoS2-based spin filter.

Facile one-pot synthesis of CoS_2-MoS_2/CNTs as efficient electrocatalyst for hydrogen evolution reaction

International Nuclear Information System (INIS)

Liu, Yan-Ru; Hu, Wen-Hui; Li, Xiao; Dong, Bin; Shang, Xiao; Han, Guan-Qun; Chai, Yong-Ming; Liu, Yun-Qi; Liu, Chen-Guang

2016-01-01

Highlights: • Ternary hybrid CoS_2-MoS_2/CNTs electrocatalysts have been prepared. • CNTs as support may provide good conductivity and low the agglomeration of MoS_2. • CoS_2 with intrinsic metallic conductivity may enhance the activity for HER. • Ternary CoS_2-MoS_2/CNTs have the better activity and stability for HER. - Abstract: Ternary hybrid cobalt disulfide-molybdenum disulfides supported on carbon nanotubes (CoS_2-MoS_2/CNTs) electrocatalysts have been prepared via a simple hydrothermal method. CNTs as support may provide good conductivity and low the agglomeration of layered MoS_2 structure. CoS_2 with intrinsic metallic conductivity may enhance the activity of the ternary hybrid electrocatalysts for hydrogen evolution reaction (HER). X-ray diffraction (XRD) data confirm the formation of ternary hybrid nanocomposites composed of CNTs, CoS_2 and amorphous MoS_2. Scanning electron microscopy (SEM) images show that strong combination between MoS_2, CNTs and regular orthohexagonal CoS_2 has been obtained. The dispersion of each component is good and no obvious agglomeration can be observed. It is found that compared with CoS_2/CNTs and MoS_2/CNTs, the ternary CoS_2-MoS_2/CNTs have the better activity for HER with a low onset potential of 70 mV (vs. RHE) and a small Talel slope of 67 mV dec"−"1, and are extremely stable after 1000 cycles. In addition, the optimal doping ratio of Co to Mo is 2:1, which have better HER activity. It is proved that the introduction of carbon materials and Co atoms could improve the performances of MoS_2-based electrocatalysts for HER.

Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators.

Science.gov (United States)

Ye, Fan; Lee, Jaesung; Feng, Philip X-L

2017-11-30

Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be hetero-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS 2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize an array of MoS 2 -graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ∼100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS 2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS 2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and provides opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.

Exploring biological effects of MoS2 nanosheets on native structures of α-helical peptides

International Nuclear Information System (INIS)

Gu, Zonglin; Li, Weifeng; Hong, Linbi; Zhou, Ruhong

2016-01-01

Recent reports of mono- and few-layer molybdenum disulfide (MoS 2 ), a representative transition metal dichacogenide (TMD), as antibacterial and anticancer agents have shed light on their potential in biomedical applications. To better facilitate these promising applications, one needs to understand the biological effects of these TMDs as well, such as their potential adverse effects on protein structure and function. Here, we sought to understand the interaction of MoS 2 nanosheets with peptides using molecular dynamics simulations and a simple model polyalanine with various lengths (PA n , n = 10, 20, 30, and 40; mainly α − helices). Our results demonstrated that MoS 2 monolayer has an exceptional capability to bind all peptides in a fast and strong manner. The strong attraction from the MoS 2 nanosheet is more than enough to compensate the energy needed to unfold the peptide, regardless of the length, which induces drastic disruptions to the intra-peptide hydrogen bonds and subsequent secondary structures of α − helices. This universal phenomenon may point to the potential nanotoxicity of MoS 2 when used in biological systems. Moreover, these results aligned well with previous findings on the potential cytotoxicity of TMD nanomaterials.

Friction and wear mechanisms in MoS2/Sb2O3/Au nanocomposite coatings

International Nuclear Information System (INIS)

Scharf, T.W.; Kotula, P.G.; Prasad, S.V.

2010-01-01

Fundamental phenomena governing the tribological mechanisms in sputter deposited amorphous MoS 2 /Sb 2 O 3 /Au nanocomposite coatings are reported. In dry environments the nanocomposite has the same low friction coefficient as pure MoS 2 (∼0.007). However, unlike pure MoS 2 coatings, which wear through in air (50% relative humidity), the composite coatings showed minimal wear, with wear factors of ∼1.2-1.4 x 10 -7 mm 3 Nm -1 in both dry nitrogen and air. The coatings exhibited non-Amontonian friction behavior, with the friction coefficient decreasing with increasing Hertzian contact stress. Cross-sectional transmission electron microscopy of wear surfaces revealed that frictional contact resulted in an amorphous to crystalline transformation in MoS 2 with 2H-basal (0 0 0 2) planes aligned parallel to the direction of sliding. In air the wear surface and subsurface regions exhibited islands of Au. The mating transfer films were also comprised of (0 0 0 2)-oriented basal planes of MoS 2 , resulting in predominantly self-mated 'basal on basal' interfacial sliding and, thus, low friction and wear.

Mechanically delaminated few layered MoS2 nanosheets based high performance wire type solid-state symmetric supercapacitors

Science.gov (United States)

Krishnamoorthy, Karthikeyan; Pazhamalai, Parthiban; Veerasubramani, Ganesh Kumar; Kim, Sang Jae

2016-07-01

Two dimensional nanostructures are increasingly used as electrode materials in flexible supercapacitors for portable electronic applications. Herein, we demonstrated a ball milling approach for achieving few layered molybdenum disulfide (MoS2) via exfoliation from their bulk. Physico-chemical characterizations such as X-ray diffraction, field emission scanning electron microscope, and laser Raman analyses confirmed the occurrence of exfoliated MoS2 sheets with few layers from their bulk via ball milling process. MoS2 based wire type solid state supercapacitors (WSCs) are fabricated and examined using cyclic voltammetry (CV), electrochemical impedance spectroscopy, and galvanostatic charge discharge (CD) measurements. The presence of rectangular shaped CV curves and symmetric triangular shaped CD profiles suggested the mechanism of charge storage in MoS2 WSC is due to the formation of electrochemical double layer capacitance. The MoS2 WSC device delivered a specific capacitance of 119 μF cm-1, and energy density of 8.1 nW h cm-1 with better capacitance retention of about 89.36% over 2500 cycles, which ensures the use of the ball milled MoS2 for electrochemical energy storage devices.

Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts

International Nuclear Information System (INIS)

Renteria, J.; Jiang, C.; Samnakay, R.; Rumyantsev, S. L.; Goli, P.; Balandin, A. A.; Shur, M. S.

2014-01-01

We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS 2 field-effect transistors revealing the relative contributions of the MoS 2 channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS 2 transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS 2 transistors, are 2 × 10 19  eV −1 cm −3 and 2.5 × 10 20  eV −1 cm −3 for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS 2 transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS 2 and other van der Waals materials

Electronic structure investigation of MoS2 and MoSe2 using angle-resolved photoemission spectroscopy and ab initio band structure studies.

Science.gov (United States)

Mahatha, S K; Patel, K D; Menon, Krishnakumar S R

2012-11-28

Angle-resolved photoemission spectroscopy (ARPES) and ab initio band structure calculations have been used to study the detailed valence band structure of molybdenite, MoS(2) and MoSe(2). The experimental band structure obtained from ARPES has been found to be in good agreement with the theoretical calculations performed using the linear augmented plane wave (LAPW) method. In going from MoS(2) to MoSe(2), the dispersion of the valence bands decreases along both k(parallel) and k(perpendicular), revealing the increased two-dimensional character which is attributed to the increasing interlayer distance or c/a ratio in these compounds. The width of the valence band and the band gap are also found to decrease, whereas the valence band maxima shift towards the higher binding energy from MoS(2) to MoSe(2).

Probing the interlayer coupling of twisted bilayer MoS2 using photoluminescence spectroscopy.

Science.gov (United States)

Huang, Shengxi; Ling, Xi; Liang, Liangbo; Kong, Jing; Terrones, Humberto; Meunier, Vincent; Dresselhaus, Mildred S

2014-10-08

Two-dimensional molybdenum disulfide (MoS2) is a promising material for optoelectronic devices due to its strong photoluminescence emission. In this work, the photoluminescence of twisted bilayer MoS2 is investigated, revealing a tunability of the interlayer coupling of bilayer MoS2. It is found that the photoluminescence intensity ratio of the trion and exciton reaches its maximum value for the twisted angle 0° or 60°, while for the twisted angle 30° or 90° the situation is the opposite. This is mainly attributed to the change of the trion binding energy. The first-principles density functional theory analysis further confirms the change of the interlayer coupling with the twisted angle, which interprets our experimental results.

MoS2 nanosheet functionalized with Cu nanoparticles and its application for glucose detection

International Nuclear Information System (INIS)

Huang, Jingwei; Dong, Zhengping; Li, Yanrong; Li, Jing; Tang, Weijie; Yang, Haidong; Wang, Jia; Bao, Yun; Jin, Jun; Li, Rong

2013-01-01

Graphical abstract: - Highlights: • First report on decorating MoS 2 nanosheet with Cu nanoparticles by chemical reduction. • Cu nanoparticles were uniformly decorated on MoS 2 nanosheet. • Glucose biosensor based on copper nanoparticles-MoS 2 nanosheet hybrid is fabricated. • The biosensor exhibits high sensitivity. - Abstract: For the first time, Cu nanoparticles were evenly decorated on MoS 2 nanosheet by chemical reduction. The as-prepared Cu-MoS 2 hybrid was characterized by atomic force microscope (AFM), Raman spectroscopy, transmission electron microscopy (TEM), X-ray diffraction (XRD) and then used to fabricate a non-enzymatic glucose sensor. The performance of our sensor was investigated by cyclic voltammetry and amperometric measurement in alkaline media. Electrochemical tests showed that Cu-MoS 2 hybrid exhibited synergistic electrocatalytic activity on the oxidation of glucose with a high sensitivity of 1055 μA mM −1 cm −2 and a linear range up to 4 mM

Investigation of the optical properties of MoS2 thin films using spectroscopic ellipsometry

International Nuclear Information System (INIS)

Yim, Chanyoung; O'Brien, Maria; Winters, Sinéad; McEvoy, Niall; Mirza, Inam; Lunney, James G.; Duesberg, Georg S.

2014-01-01

Spectroscopic ellipsometry (SE) characterization of layered transition metal dichalcogenide (TMD) thin films grown by vapor phase sulfurization is reported. By developing an optical dispersion model, the extinction coefficient and refractive index, as well as the thickness of molybdenum disulfide (MoS 2 ) films, were extracted. In addition, the optical band gap was obtained from SE and showed a clear dependence on the MoS 2 film thickness, with thinner films having a larger band gap energy. These results are consistent with theory and observations made on MoS 2 flakes prepared by exfoliation, showing the viability of vapor phase derived TMDs for optical applications

Dual functional MoS2/graphene interlayer as an efficient polysulfide barrier for advanced lithium-sulfur batteries

International Nuclear Information System (INIS)

Guo, Pengqian; Liu, Dequan; Liu, Zhengjiao; Shang, Xiaonan; Liu, Qiming; He, Deyan

2017-01-01

Highlights: •Dual functional MoS 2 /graphene interlayer was first used as an efficient polysulfide-trapping shield for lithium-sulfur batteries. •MoS 2 /graphene interlayer shows strong chemical interactions with LiPSs. •MoS 2 /graphene interlayer forms a 3D network to facilitate electron and ion transfer during the discharge-charge processes. •The resultant lithium-sulfur batteries exhibit a superior rate capacity and improved cycling capacity. -- Abstract: A dual functional interlayer consisted of composited two-dimensional MoS 2 and graphene has been developed as an efficient polysulfide barrier for lithium-sulfur batteries (LSBs). With such a configuration, LSBs show a superior rate capacity and improved cycling capacity. The excellent electrochemical performance can be attributed to the strong bonding interactions between the MoS 2 /graphene interlayer and the formed lithium polysulfides (LiPSs) as well as the good electrical conductivity of the MoS 2 /graphene composite. The MoS 2 /graphene interlayer can physically block LiPSs by the graphene nanosheets and chemically suppress the dissolution of LiPSs by the polar MoS 2 nanoflowers. Such a dual functional interlayer further provides a good contact with the surface of the sulfur cathode, acts as an upper current collector and greatly improves the sulfur utilization and the rate capability of LSBs.

Preparation of MoS2/TiO2 based nanocomposites for photocatalysis and rechargeable batteries: progress, challenges, and perspective.

Science.gov (United States)

Chen, Biao; Meng, Yuhuan; Sha, Junwei; Zhong, Cheng; Hu, Wenbin; Zhao, Naiqin

2017-12-21

The rapidly increasing severity of the energy crisis and environmental degradation are stimulating the rapid development of photocatalysts and rechargeable lithium/sodium ion batteries. In particular, MoS 2 /TiO 2 based nanocomposites show great potential and have been widely studied in the areas of both photocatalysis and rechargeable lithium/sodium ion batteries due to their superior combination properties. In addition to the low-cost, abundance, and high chemical stability of both MoS 2 and TiO 2 , MoS 2 /TiO 2 composites also show complementary advantages. These include the strong optical absorption of TiO 2 vs. the high catalytic activity of MoS 2 , which is promising for photocatalysis; and excellent safety and superior structural stability of TiO 2 vs. the high theoretic specific capacity and unique layered structure of MoS 2 , thus, these composites are exciting as anode materials. In this review, we first summarize the recent progress in MoS 2 /TiO 2 -based nanomaterials for applications in photocatalysis and rechargeable batteries. We highlight the synthesis, structure and mechanism of MoS 2 /TiO 2 -based nanomaterials. Then, advancements and strategies for improving the performance of these composites in photocatalytic degradation, hydrogen evolution, CO 2 reduction, LIBs and SIBs are critically discussed. Finally, perspectives on existing challenges and probable opportunities for future exploration of MoS 2 /TiO 2 -based composites towards photocatalysis and rechargeable batteries are presented. We believe the present review would provide enriched information for a deeper understanding of MoS 2 /TiO 2 composites and open avenues for the rational design of MoS 2 /TiO 2 based composites for energy and environment-related applications.

Charging effect at grain boundaries of MoS2

Science.gov (United States)

Yan, Chenhui; Dong, Xi; Li, Connie H.; Li, Lian

2018-05-01

Grain boundaries (GBs) are inherent extended defects in chemical vapor deposited (CVD) transition metal dichalcogenide (TMD) films. Characterization of the atomic structure and electronic properties of these GBs is crucial for understanding and controlling the properties of TMDs via defect engineering. Here, we report the atomic and electronic structure of GBs in CVD grown MoS2 on epitaxial graphene/SiC(0001). Using scanning tunneling microscopy/spectroscopy, we find that GBs mostly consist of arrays of dislocation cores, where the presence of mid-gap states shifts both conduction and valence band edges by up to 1 eV. Our findings demonstrate the first charging effect near GBs in CVD grown MoS2, providing insights into the significant impact GBs can have on materials properties.

Induction of Chirality in Two-Dimensional Nanomaterials: Chiral 2D MoS2 Nanostructures.

Science.gov (United States)

Purcell-Milton, Finn; McKenna, Robert; Brennan, Lorcan J; Cullen, Conor P; Guillemeney, Lilian; Tepliakov, Nikita V; Baimuratov, Anvar S; Rukhlenko, Ivan D; Perova, Tatiana S; Duesberg, Georg S; Baranov, Alexander V; Fedorov, Anatoly V; Gun'ko, Yurii K

2018-02-27

Two-dimensional (2D) nanomaterials have been intensively investigated due to their interesting properties and range of potential applications. Although most research has focused on graphene, atomic layered transition metal dichalcogenides (TMDs) and particularly MoS 2 have gathered much deserved attention recently. Here, we report the induction of chirality into 2D chiral nanomaterials by carrying out liquid exfoliation of MoS 2 in the presence of chiral ligands (cysteine and penicillamine) in water. This processing resulted in exfoliated chiral 2D MoS 2 nanosheets showing strong circular dichroism signals, which were far past the onset of the original chiral ligand signals. Using theoretical modeling, we demonstrated that the chiral nature of MoS 2 nanosheets is related to the presence of chiral ligands causing preferential folding of the MoS 2 sheets. There was an excellent match between the theoretically calculated and experimental spectra. We believe that, due to their high aspect ratio planar morphology, chiral 2D nanomaterials could offer great opportunities for the development of chiroptical sensors, materials, and devices for valleytronics and other potential applications. In addition, chirality plays a key role in many chemical and biological systems, with chiral molecules and materials critical for the further development of biopharmaceuticals and fine chemicals, and this research therefore should have a strong impact on relevant areas of science and technology such as nanobiotechnology, nanomedicine, and nanotoxicology.

Preparation of yolk-shell MoS2 nanospheres covered with carbon shell for excellent lithium-ion battery anodes

Science.gov (United States)

Guo, Bangjun; Feng, Yu; Chen, Xiaofan; Li, Bo; Yu, Ke

2018-03-01

Molybdenum disulfide is regarded as one of the most promising electrode materials for high performance lithium-ion batteries. Designing firm basal structure is a key point to fully utilize the high capacity of layered MoS2 nanomaterials. Here, yolk-shell structured MoS2 nanospheres is firstly designed and fabricated to meet this needs. This unique yolk-shell nanospheres are transformed from solid nanospheres by a simply weak alkaline etching method. Then, the yolk-shell MoS2/C is synthesized by a facile process to protect the outside MoS2 shell and promote the conductivity. Taking advantages of high capacity and well-defined cavity space, allowing the core MoS2 to expand freely without breaking the outer shells, yolk-shell MoS2/C nanospheres delivers long cycle life (94% of capacity retained after 200 cycles) and high rate behaviour (830 mA h g-1 at 5 A g-1). This design of yolk-shell structure may set up a new strategy for preparing next generation anode materials for LIBs.

Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors

DEFF Research Database (Denmark)

Igor, Mucha

1997-01-01

The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed...

Role of interlayer coupling in ultra thin MoS2

KAUST Repository

Cheng, Yingchun

2012-01-01

The effects of interlayer coupling on the vibrational and electronic properties of ultra thin MoS 2 were studied by ab initio calculations. For smaller slab thickness, the interlayer distance is significantly elongated because of reduced interlayer coupling. This explains the anomalous thickness dependence of the lattice vibrations observed by Lee et al. (ACS Nano, 2010, 4, 2695). The absence of interlayer coupling in mono-layer MoS 2 induces a transition from direct to indirect band gap behaviour. Our results demonstrate a strong interplay between the intralayer chemical bonding and the interlayer van-der-Waals interaction. This journal is © 2012 The Royal Society of Chemistry.

Development of a new molecular dynamics method for tribochemical reaction and its application to formation dynamics of MoS2 tribofilm

International Nuclear Information System (INIS)

Morita, Yusuke; Onodera, Tasuku; Suzuki, Ai; Sahnoun, Riadh; Koyama, Michihisa; Tsuboi, Hideyuki; Hatakeyama, Nozomu; Endou, Akira; Takaba, Hiromitsu; Kubo, Momoji; Del Carpio, Carlos A.; Shin-yoshi, Takatoshi; Nishino, Noriaki; Suzuki, Atsushi; Miyamoto, Akira

2008-01-01

Recently we have developed a novel molecular dynamics program NEW-RYUDO-CR, which can deal with chemical reactions. The developed method has been applied to the study of tribochemical reaction dynamics of MoS 2 tribofilm on iron surface. The initially amorphous MoS 2 layer self-organized its structure as result of the tribochemical reactions and formed layered MoS 2 tribofilm. The friction coefficient significantly decreased as the MoS 2 tribofilm was formed. Besides, sliding was observed between sulfur layers of MoS 2 tribofilms which occurred due to repulsive Coulombic interaction forces between sulfur atoms. This indicates that the formation of the layered MoS 2 tribofilm is important to achieve better lubrication properties

Direct Growth of High Mobility and Low-Noise Lateral MoS2 -Graphene Heterostructure Electronics.

Science.gov (United States)

Behranginia, Amirhossein; Yasaei, Poya; Majee, Arnab K; Sangwan, Vinod K; Long, Fei; Foss, Cameron J; Foroozan, Tara; Fuladi, Shadi; Hantehzadeh, Mohammad Reza; Shahbazian-Yassar, Reza; Hersam, Mark C; Aksamija, Zlatan; Salehi-Khojin, Amin

2017-08-01

Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all-2D electronic circuitry. This study employs seed-free consecutive chemical vapor deposition processes to synthesize high-quality lateral MoS 2 -graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS 2 -graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS 2 -metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS 2 -graphene in-plane heterostructures are promising materials for the scale-up of all-2D circuitry with superlative electrical performance. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Stacking change in MoS2 bilayers induced by interstitial Mo impurities.

Science.gov (United States)

Cortés, Natalia; Rosales, Luis; Orellana, Pedro A; Ayuela, Andrés; González, Jhon W

2018-02-01

We use a theoretical approach to reveal the electronic and structural properties of molybdenum impurities between MoS 2 bilayers. We find that interstitial Mo impurities are able to reverse the well-known stability order of the pristine bilayer, because the most stable form of stacking changes from AA' (undoped) into AB' (doped). The occurrence of Mo impurities in different positions shows their split electronic levels in the energy gap, following octahedral and tetrahedral crystal fields. The energy stability is related to the accommodation of Mo impurities compacted in hollow sites between layers. Other less stable configurations for Mo dopants have larger interlayer distances and band gaps than those for the most stable stacking. Our findings suggest possible applications such as exciton trapping in layers around impurities, and the control of bilayer stacking by Mo impurities in the growth process.

Synthesis of MoS 2 Inorganic Fullerene-like Nanoparticles by a ...

African Journals Online (AJOL)

MoS2 nanoparticles with fullerene-like structure (IF-MoS2) were successfully obtained at heating temperature higher than 840 °C by a chemical vapour deposition method usingMoO3 and sulfur powders as raw materials. The synthesized samples were characterized by XRD, SEM, TEM, EDX and Raman spectrometry, ...

Synthesis and characterization of solvent-free ionic molybdenum disulphide (MoS2) nanofluids

International Nuclear Information System (INIS)

Gu, Shu-Ying; Gao, Xie-Feng; Zhang, Yi-Han

2015-01-01

A development of the novel and stable solvent-free ionic MoS 2 nanofluids by a facile and scalable hydrothermal method is presented. The nanofluids were synthesized by surface functionalizing nanoscale MoS 2 from hydrothermal synthesis with a charged corona, and ionically tethering with oligomeric chains as a canopy. The structures and properties of the nanofluids were characterized by Fourier transform infrared (FTIR), nuclear magnetic resonance (NMR, 1 H), differential scanning calorimeter (DSC), thermogravimetric analysis (TGA) and ARES rheometer. The obtained solvent-free nanofluids are homogeneous, stable amber-like fluids with no evidence of phase separation. The nanofluids could be easily dispersed in both aqueous and organic solvents to form transparent and stable liquids due to the ionic nature and the presence of oligomeric polymer chains. It was found that the solvent-free nanofluids with up to 32 wt% inorganic content show Newtonian rheological behaviors due to the high graft density and uniform dispersion of inorganic cores, indicating that the nanofluids would have a stable lubricating performance. As reported in our previous communication, the nanofluids showing lower, more stable friction coefficients of less than 0.1 with self-healing lubricating behaviors. For deeper understanding of the nanofluids, the details of synthesis, chemical structures, rheological behaviors and molecular dynamics of the nanofluids were investigated in details. The rheological behaviors can be tailored by varying the grafting density of the canopy. Dynamic results of the canopy of the MoS 2 nanofluids show that inorganic MoS 2 cores have hindrance effect on the canopy segmental motions above 253 K due to their effect to the mobility of anions and the departing-recombining motions between the paired cations and anions. - Highlights: • A development of the novel synthesis of solvent-free MoS 2 nanofluids is presented. • The rheological behaviors can be tailored by

Tm-doped fiber laser mode-locking with MoS2-polyvinyl alcohol saturable absorber

Science.gov (United States)

Cao, Liming; Li, Xing; Zhang, Rui; Wu, Duanduan; Dai, Shixun; Peng, Jian; Weng, Jian; Nie, Qiuhua

2018-03-01

We have designed an all-fiber passive mode-locking thulium-doped fiber laser that uses molybdenum disulfide (MoS2) as a saturable absorber (SA) material. A free-standing few-layer MoS2-polyvinyl alcohol (PVA) film is fabricated by liquid phase exfoliation (LPE) and is then transferred onto the end face of a fiber connector. The excellent saturable absorption of the fabricated MoS2-based SA allows the laser to output soliton pulses at a pump power of 500 mW. Fundamental frequency mode-locking is realized at a repetition frequency of 13.9 MHz. The central wavelength is 1926 nm, the 3 dB spectral bandwidth is 2.86 nm and the pulse duration is 1.51 ps. Additionally, third-order harmonic mode-locking of the laser is also achieved. The pulse duration is 1.33 ps, which is slightly narrower than the fundamental frequency mode-locking bandwidth. The experimental results demonstrate that the few-layer MoS2-PVA SA is promising for use in 2 μm laser systems.

Ultrathin MoS2 and WS2 layers on silver nano-tips as electron emitters

Science.gov (United States)

Loh, Tamie A. J.; Tanemura, Masaki; Chua, Daniel H. C.

2016-09-01

2-dimensional (2D) inorganic analogues of graphene such as MoS2 and WS2 present interesting opportunities for field emission technology due to their high aspect ratio and good electrical conductivity. However, research on 2D MoS2 and WS2 as potential field emitters remains largely undeveloped compared to graphene. Herein, we present an approach to directly fabricate ultrathin MoS2 and WS2 onto Ag nano-tips using pulsed laser deposition at low temperatures of 450-500 °C. In addition to providing a layer of chemical and mechanical protection for the Ag nano-tips, the growth of ultrathin MoS2 and WS2 layers on Ag led to enhanced emission properties over that of pristine nano-tips due to a reduction of the effective barrier height arising from charge injection from Ag to the overlying MoS2 or WS2. For WS2 on Ag nano-tips, the phasic mixture was also an important factor influencing the field emission performance. The presence of 1T-WS2 at the metal-WS2 interface in a hybrid film of 2H/1T-WS2 leads to improvement in the field emission capabilities as compared to pure 2H-WS2 on Ag nano-tips.

Probing the biocompatibility of MoS2 nanosheets by cytotoxicity assay and electrical impedance spectroscopy

Science.gov (United States)

Shah, Pratikkumar; Narayanan, Tharangattu N.; Li, Chen-Zhong; Alwarappan, Subbiah

2015-08-01

Transition metal dichalgogenides such as MoS2 have recently emerged as hot two-dimensional (2D) materials due to their superior electronic and catalytic properties. Recently, we have reported the usefulness of MoS2 nanosheets toward the electrochemical detection of neurotransmitters and glucose (Narayanan et al 2014 Nanotechnology 25 335702). Furthermore, there are reports available in the literature that demonstrate the usefulness of MoS2 nanosheets for biosensing and energy storage applications (Zhu et al 2013 J. Am. Chem. Soc. 135 5998-6001 Pumera and Loo 2014 Trends Anal. Chem. 61 49-53 Lee et al 2014 Sci. Rep. 4 7352; Stephenson et al 2014 Energy Environ. Sci. 7 209-31). Understanding the cytotoxic effect of any material is very important prior to employing them for any in vivo biological applications such as implantable sensors, chips, or carriers for drug delivery and cell imaging purposes. Herein, we report the cytotoxicity of the MoS2 nanosheets based on the cytotoxic assay results and electrical impedance analysis using rat pheochromocytoma cells (PC12) and rat adrenal medulla endothelial cells (RAMEC). Our results indicated that the MoS2 nanosheets synthesized in our work are safe 2D nanosheets for futuristic biomedical applications.

Origin of the n -type and p -type conductivity of MoS 2 monolayers on a SiO 2 substrate

KAUST Repository

Dolui, Kapildeb

2013-04-02

Ab initio density functional theory calculations are performed to study the electronic properties of a MoS2 monolayer deposited over a SiO 2 substrate in the presence of interface impurities and defects. When MoS2 is placed on a defect-free substrate, the oxide plays an insignificant role since the conduction band top and the valence band minimum of MoS2 are located approximately in the middle of the SiO2 band gap. However, if Na impurities and O dangling bonds are introduced at the SiO2 surface, these lead to localized states, which modulate the conductivity of the MoS2 monolayer from n- to p-type. Our results show that the conductive properties of MoS2 deposited on SiO 2 are mainly determined by the detailed structure of the MoS 2/SiO2 interface, and suggest that doping the substrate can represent a viable strategy for engineering MoS2-based devices. © 2013 American Physical Society.

Possible doping strategies for MoS 2 monolayers: An ab initio study

KAUST Repository

Dolui, Kapildeb

2013-08-14

Density functional theory is used to systematically study the electronic properties of doped MoS2 monolayers, where the dopants are incorporated both via S/Mo substitution or as adsorbates. Among the possible substitutional dopants at the Mo site, Nb is identified as suitable p-type dopant, while Re is the donor with the lowest activation energy. When dopants are simply adsorbed on a monolayer we find that alkali metals shift the Fermi energy into the MoS2 conduction band, making the system n type. Finally, the adsorption of charged molecules is considered, mimicking an ionic liquid environment. We find that molecules adsorption can lead to both n- and p-type conductivity, depending on the charge polarity of the adsorbed species. © 2013 American Physical Society.

Possible doping strategies for MoS 2 monolayers: An ab initio study

KAUST Repository

Dolui, Kapildeb; Rungger, Ivan; Das Pemmaraju, Chaitanya; Sanvito, Stefano

2013-01-01

Density functional theory is used to systematically study the electronic properties of doped MoS2 monolayers, where the dopants are incorporated both via S/Mo substitution or as adsorbates. Among the possible substitutional dopants at the Mo site, Nb is identified as suitable p-type dopant, while Re is the donor with the lowest activation energy. When dopants are simply adsorbed on a monolayer we find that alkali metals shift the Fermi energy into the MoS2 conduction band, making the system n type. Finally, the adsorption of charged molecules is considered, mimicking an ionic liquid environment. We find that molecules adsorption can lead to both n- and p-type conductivity, depending on the charge polarity of the adsorbed species. © 2013 American Physical Society.

Electron transfer kinetics on natural crystals of MoS2 and graphite.

Science.gov (United States)

Velický, Matěj; Bissett, Mark A; Toth, Peter S; Patten, Hollie V; Worrall, Stephen D; Rodgers, Andrew N J; Hill, Ernie W; Kinloch, Ian A; Novoselov, Konstantin S; Georgiou, Thanasis; Britnell, Liam; Dryfe, Robert A W

2015-07-21

Here, we evaluate the electrochemical performance of sparsely studied natural crystals of molybdenite and graphite, which have increasingly been used for fabrication of next generation monolayer molybdenum disulphide and graphene energy storage devices. Heterogeneous electron transfer kinetics of several redox mediators, including Fe(CN)6(3-/4-), Ru(NH3)6(3+/2+) and IrCl6(2-/3-) are determined using voltammetry in a micro-droplet cell. The kinetics on both materials are studied as a function of surface defectiveness, surface ageing, applied potential and illumination. We find that the basal planes of both natural MoS2 and graphite show significant electroactivity, but a large decrease in electron transfer kinetics is observed on atmosphere-aged surfaces in comparison to in situ freshly cleaved surfaces of both materials. This is attributed to surface oxidation and adsorption of airborne contaminants at the surface exposed to an ambient environment. In contrast to semimetallic graphite, the electrode kinetics on semiconducting MoS2 are strongly dependent on the surface illumination and applied potential. Furthermore, while visibly present defects/cracks do not significantly affect the response of graphite, the kinetics on MoS2 systematically accelerate with small increase in disorder. These findings have direct implications for use of MoS2 and graphene/graphite as electrode materials in electrochemistry-related applications.

Synthesis of MoS2-reduced graphene oxide/Fe3O4 nanocomposite for enhanced electromagnetic interference shielding effectiveness

Science.gov (United States)

Prasad, Jagdees; Singh, Ashwani Kumar; Shah, Jyoti; Kotnala, R. K.; Singh, Kedar

2018-05-01

This article presents a facile two step hydrothermal process for the synthesis of MoS2-reduced graphene oxide/Fe3O4 (MoS2-rGO/Fe3O4) nanocomposite and its application as an excellent electromagnetic interference shielding material. Characterization tools like; scanning electron microscope, transmission electron microscope, x-ray diffraction, and Raman spectroscopy were used to confirm the formation of nanocomposite and found that spherical Fe3O4 nanoparticles are well dispersed over MoS2-rGO composite with average particle size ∼25–30 nm was confirmed by TEM. Structural characterization done by XRD was found inconsistent with the known lattice parameter of MoS2 nanosheet, reduced graphene oxide and Fe3O4 nanoparticles. Electromagnetic shielding effectiveness of MoS2-rGO/Fe3O4 nanocomposite was evaluated and found to be an excellent EMI shielding material in X-band range (8.0–12.0 GHz). MoS2-rGO composite shows poor shielding capacity (SET ∼ 3.81 dB) in entire range as compared to MoS2-rGO/Fe3O4 nanocomposite (SET ∼ 8.27 dB). It is due to interfacial polarization in the presence of EM field. The result indicates that MoS2-rGO/Fe3O4 nanocomposite provide a new stage for the next generation in high-performance EM wave absorption and EMI shielding effectiveness.

Low-temperature synthesis of 2D MoS2 on a plastic substrate for a flexible gas sensor.

Science.gov (United States)

Zhao, Yuxi; Song, Jeong-Gyu; Ryu, Gyeong Hee; Ko, Kyung Yong; Woo, Whang Je; Kim, Youngjun; Kim, Donghyun; Lim, Jun Hyung; Lee, Sunhee; Lee, Zonghoon; Park, Jusang; Kim, Hyungjun

2018-05-08

The efficient synthesis of two-dimensional molybdenum disulfide (2D MoS2) at low temperatures is essential for use in flexible devices. In this study, 2D MoS2 was grown directly at a low temperature of 200 °C on both hard (SiO2) and soft substrates (polyimide (PI)) using chemical vapor deposition (CVD) with Mo(CO)6 and H2S. We investigated the effect of the growth temperature and Mo concentration on the layered growth by Raman spectroscopy and microscopy. 2D MoS2 was grown by using low Mo concentration at a low temperature. Through optical microscopy, Raman spectroscopy, X-ray photoemission spectroscopy, photoluminescence, and transmission electron microscopy measurements, MoS2 produced by low-temperature CVD was determined to possess a layered structure with good uniformity, stoichiometry, and a controllable number of layers. Furthermore, we demonstrated the realization of a 2D MoS2-based flexible gas sensor on a PI substrate without any transfer processes, with competitive sensor performance and mechanical durability at room temperature. This fabrication process has potential for burgeoning flexible and wearable nanotechnology applications.

One step hydrothermal synthesis of 3D CoS2@MoS2-NG for high performance supercapacitors.

Science.gov (United States)

Meng, Qi; Chen, Yizhi; Zhu, Wenkun; Zhang, Ling; Yang, Xiaoyong; Duan, Tao

2018-05-03

A three-dimensional (3D) MoS 2 coated CoS 2 -nitrogen doped graphene (NG) (CoS 2 @MoS 2 -NG) hybrid has been synthesized by a one step hydrothermal method as supercapacitor (SC) electrode material for the first time. Such a composite consists of NG embedded with stacked CoS 2 @MoS 2 sheets. With a 3D skeleton, it prevents the agglomeration of CoS 2 @MoS 2 nanoparticles, resulting in sound conductivity, rich porous structures and a large surface area. The results indicate that CoS 2 @MoS 2 -NG has higher specific capacitance (198 F g -1 at 1 A g -1 ), better rate performance (with about 56.57% from 1 to 16 A g -1 ) and an improved cycle stability (with about 96.97% after 1000 cycles). It is an ideal candidate for SC electrode materials.

Coaxial MoS2@Carbon Hybrid Fibers: A Low-Cost Anode Material for High-Performance Li-Ion Batteries

Directory of Open Access Journals (Sweden)

Rui Zhou

2017-02-01

Full Text Available A low-cost bio-mass-derived carbon substrate has been employed to synthesize MoS2@carbon composites through a hydrothermal method. Carbon fibers derived from natural cotton provide a three-dimensional and open framework for the uniform growth of MoS2 nanosheets, thus hierarchically constructing coaxial architecture. The unique structure could synergistically benefit fast Li-ion and electron transport from the conductive carbon scaffold and porous MoS2 nanostructures. As a result, the MoS2@carbon composites—when serving as anodes for Li-ion batteries—exhibit a high reversible specific capacity of 820 mAh·g−1, high-rate capability (457 mAh·g−1 at 2 A·g−1, and excellent cycling stability. The use of bio-mass-derived carbon makes the MoS2@carbon composites low-cost and promising anode materials for high-performance Li-ion batteries.

Synthesis of MoS_2/g-C_3N_4 nanosheets as 2D heterojunction photocatalysts with enhanced visible light activity

International Nuclear Information System (INIS)

Li, Juan; Liu, Enzhou; Ma, Yongning; Hu, Xiaoyun; Wan, Jun; Sun, Lin; Fan, Jun

2016-01-01

Graphical abstract: TEM image and schematic diagram of photocatalytic mechanism of 2D MoS_2/g-C_3N_4 composites. - Highlights: • g-C_3N_4 nanosheets coupled with MoS_2 nanosheets as 2D heterojunction photocatalysts were synthesized successfully. • The 2D MoS_2/g-C_3N_4 heterojunctions show higher photocatalytic activity than pure g-C_3N_4. • The photocatalytic mechanism of the 2D MoS_2/g-C_3N_4 heterojunction was described. - Abstract: g-C_3N_4 nanosheets coupled with MoS_2 nanosheets as 2D heteroconjuction were prepared via a facile impregnation and calcination method. The structure characterization clearly indicated that MoS_2 nanosheets were successfully horizontal loaded on g-C_3N_4 nanosheets. The investigation indicated that the formation of 2D heterojunction between the g-C_3N_4 nanosheets and MoS_2 nanosheets promoted the charge transfer and enhanced separation efficiency of photoinduced electron–hole pairs. Furthermore, the measurement of photocatalytic activity for the degradation of rhodamine B and methyl orange revealed that the as-prepared 2D MoS_2/g-C_3N_4 heterojunction exhibited the significantly enhanced photocatalytic activity and considerable stability under visible light irradiation. The 2D MoS_2/g-C_3N_4 heterojunction prepared with 3 wt% of MoS_2 exhibited the optimal photodegradable efficiency. The present work shows that the formation of 2D heterojunction should be a good strategy to design efficient photocatalysts.

Simulating Excitons in MoS2 with Time-Dependent Density Functional Theory

Science.gov (United States)

Flamant, Cedric; Kolesov, Grigory; Kaxiras, Efthimios

Monolayer molybdenum disulfide, owing to its graphene-like two-dimensional geometry whilst still having a finite bandgap, is a material of great interest in condensed matter physics and for potential application in electronic devices. In particular, MoS2 exhibits significant excitonic effects, a desirable quality for fundamental many-body research. Time-dependent density functional theory (TD-DFT) allows us to simulate dynamical effects as well as temperature-based effects in a natural way given the direct treatment of the time evolution of the system. We present a TD-DFT study of monolayer MoS2 exciton dynamics, examining various qualitative and quantitative predictions in pure samples and in the presence of defects. In particular, we generate an absorption spectrum through simulated pulse excitation for comparison to experiment and also analyze the response of the exciton in an external electric field.In this work we also discuss the electronic structure of the exciton in MoS2 with and without vacancies.

Structural transformation of MoO3 nanobelts into MoS2 nanotubes

International Nuclear Information System (INIS)

Deepak, Francis Leonard; Mayoral, Alvaro; Yacaman, Miguel Jose

2009-01-01

The structural transformation of MoO 3 nanobelts into MoS 2 nanotubes using a simple sulfur source has been reported. This transformation has been extensively investigated using electron microscopic and spectroscopic techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), electron diffraction (ED), and energy-dispersive X-ray analysis (SEM-EDAX and TEM-EDX). The method described in this report will serve as a generic route for the transformation of other oxide nanostructures into the chalcogenide nanostructures. (orig.)

Ultrafast Transient Terahertz Conductivity of Monolayer MoS 2 and WSe 2 Grown by Chemical Vapor Deposition

KAUST Repository

Docherty, Callum J.

2014-11-25

We have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS2 and WSe2 using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS2, and 1 ps from trilayer MoS2 and monolayer WSe2. Our results indicate the potential of these materials as high-speed optoelectronic materials.

Ultrafast Transient Terahertz Conductivity of Monolayer MoS 2 and WSe 2 Grown by Chemical Vapor Deposition

KAUST Repository

Docherty, Callum J.; Parkinson, Patrick; Joyce, Hannah J.; Chiu, Ming-Hui; Chen, Chang-Hsiao; Lee, Ming-Yang; Li, Lain-Jong; Herz, Laura M.; Johnston, Michael B.

2014-01-01

We have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS2 and WSe2 using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS2, and 1 ps from trilayer MoS2 and monolayer WSe2. Our results indicate the potential of these materials as high-speed optoelectronic materials.

Enhancement of photovoltaic response in multilayer MoS2 induced by plasma doping.

Science.gov (United States)

Wi, Sungjin; Kim, Hyunsoo; Chen, Mikai; Nam, Hongsuk; Guo, L Jay; Meyhofer, Edgar; Liang, Xiaogan

2014-05-27

Layered transition-metal dichalcogenides hold promise for making ultrathin-film photovoltaic devices with a combination of excellent photovoltaic performance, superior flexibility, long lifetime, and low manufacturing cost. Engineering the proper band structures of such layered materials is essential to realize such potential. Here, we present a plasma-assisted doping approach for significantly improving the photovoltaic response in multilayer MoS2. In this work, we fabricated and characterized photovoltaic devices with a vertically stacked indium tin oxide electrode/multilayer MoS2/metal electrode structure. Utilizing a plasma-induced p-doping approach, we are able to form p-n junctions in MoS2 layers that facilitate the collection of photogenerated carriers, enhance the photovoltages, and decrease reverse dark currents. Using plasma-assisted doping processes, we have demonstrated MoS2-based photovoltaic devices exhibiting very high short-circuit photocurrent density values up to 20.9 mA/cm(2) and reasonably good power-conversion efficiencies up to 2.8% under AM1.5G illumination, as well as high external quantum efficiencies. We believe that this work provides important scientific insights for leveraging the optoelectronic properties of emerging atomically layered two-dimensional materials for photovoltaic and other optoelectronic applications.

High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics

Directory of Open Access Journals (Sweden)

Young Ki Hong

2016-05-01

Full Text Available Various strategies and mechanisms have been suggested for investigating a Schottky contact behavior in molybdenum disulfide (MoS2 thin-film transistor (TFT, which are still in much debate and controversy. As one of promising breakthrough for transparent electronics with a high device performance, we have realized MoS2 TFTs with source/drain electrodes consisting of transparent bi-layers of a conducting oxide over a thin film of low work function metal. Intercalation of a low work function metal layer, such as aluminum, between MoS2 and transparent source/drain electrodes makes it possible to optimize the Schottky contact characteristics, resulting in about 24-fold and 3 orders of magnitude enhancement of the field-effect mobility and on-off current ratio, respectively, as well as transmittance of 87.4 % in the visible wavelength range.

Changes in the composition, structure and friction property of sputtered MoS2 films by LEO environment exposure

International Nuclear Information System (INIS)

Gao, Xiaoming; Hu, Ming; Sun, Jiayi; Fu, Yanlong; Yang, Jun; Liu, Weimin; Weng, Lijun

2015-01-01

Highlights: • Sputtered MoS 2 films were exposed in real low earth orbit (LEO) environment. • LEO exposure resulted in the oxidation and S loss of MoS 2 film surface. • Depth affected by the LEO exposure was limited within 10 nm. • The exposed MoS 2 film exhibited a slight increase in friction coefficient at initial sliding stage. - Abstract: Radio frequency-sputtered MoS 2 films had been exposed for 43.5 h in real low earth orbit (LEO) space environment by a space environment exposure device (SEED) aboard China Shenzhou-7 manned spaceship. The composition, morphology, phase structure and friction property of the exposed films were investigated using X-ray photoelectron spectroscope (XPS), X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), X-ray energy-dispersive spectroscopy (EDS) and ball-on-disk tribometer. XRD and EDS results revealed that the as-deposited MoS 2 films were characterized by a MoS x O y phase structure, in which x and y values were determined to be ∼0.65 and 1.24, respectively. XPS analysis revealed that due to space atomic oxygen attack, the film surface was oxidized to MoO 3 and MoS x O y with higher O concentration, while the partial S was lost. However, the affected depth was restricted within the surface layer because of protective function of the oxidation layer. As a result, the friction coefficient only exhibited a slight increase at initial stage of sliding friction

Light-erasable embedded charge-trapping memory based on MoS2 for system-on-panel applications

Science.gov (United States)

He, Long-Fei; Zhu, Hao; Xu, Jing; Liu, Hao; Nie, Xin-Ran; Chen, Lin; Sun, Qing-Qing; Xia, Yang; Wei Zhang, David

2017-11-01

The continuous scaling and challenges in device integrations in modern portable electronic products have aroused many scientific interests, and a great deal of effort has been made in seeking solutions towards a more microminiaturized package assembled with smaller and more powerful components. In this study, an embedded light-erasable charge-trapping memory with a high-k dielectric stack (Al2O3/HfO2/Al2O3) and an atomically thin MoS2 channel has been fabricated and fully characterized. The memory exhibits a sufficient memory window, fast programming and erasing (P/E) speed, and high On/Off current ratio up to 107. Less than 25% memory window degradation is observed after projected 10-year retention, and the device functions perfectly after 8000 P/E operation cycles. Furthermore, the programmed device can be fully erased by incident light without electrical assistance. Such excellent memory performance originates from the intrinsic properties of two-dimensional (2D) MoS2 and the engineered back-gate dielectric stack. Our integration of 2D semiconductors in the infrastructure of light-erasable charge-trapping memory is very promising for future system-on-panel applications like storage of metadata and flexible imaging arrays.

Development of MOS-FET based Marx generator with self-proved gate power

International Nuclear Information System (INIS)

Tokuchi, A.; Jiang, W.; Takayama, K.; Arai, T.; Kawakubo, T.; Adachi, T.

2012-01-01

New MOS-FET based Marx generator is described. An electric gate power for the MOS-FET is provided from the Marx main circuit itself. Four-stage Marx generator generates -12kV of the output voltage. The Marx Generator is successfully used to drive an Einzel lens chopper to generate a short pulsed ion beam for a KEK digital accelerator. (author)

Rheological and tribological behaviour of lubricating oils containing platelet MoS2 nanoparticles

Science.gov (United States)

Wan, Qingming; Jin, Yi; Sun, Pengcheng; Ding, Yulong

2014-05-01

This work concerns rheological and frictional behaviour of lubricating oils containing platelet molybdenum disulfide (MoS2) nanoparticles (average diameter 50 nm; single layer thickness 3 nm). Stable nano-MoS2 lubricants were formulated and measured for their rheological behaviour and tribological performance. Rheological experiments showed that the nano-MoS2 oils were non-Newtonian following the Bingham plastic fluid model. The viscosity data fitted the classic Hinch-Leal (H-L) model if an agglomeration factor of 1.72 was introduced. Tribological experiments indicated that the use of MoS2 nanoparticles could enhance significantly the tribological performance of the base lubricating oil (reduced frictional coefficient, reduced surface wear and increased stability). Scanning electron microscopy, laser confocal microscope and x-ray energy dispersive spectroscopy analyses suggested that the reduced frictional coefficient and surface wear be associated with surface patching effects. Such patching effects were shown to depend on the concentration of MoS2 nanoparticles, and an effective patching required a concentration over approximately 1 wt%. The increased stability could be attributed to the enhanced heat transfer and lubricating oil film strength due to the presence of nanoparticles.

Spin transport properties of partially edge-hydrogenated MoS2 nanoribbon heterostructure

International Nuclear Information System (INIS)

Peng, Li; Yao, Kailun; Zhu, Sicong; Ni, Yun; Zu, Fengxia; Wang, Shuling; Guo, Bin; Tian, Yong

2014-01-01

We report ab initio calculations of electronic transport properties of heterostructure based on MoS 2 nanoribbons. The heterostructure consists of edge hydrogen-passivated and non-passivated zigzag MoS 2 nanoribbons (ZMoS 2 NR-H/ZMoS 2 NR). Our calculations show that the heterostructure has half-metallic behavior which is independent of the nanoribbon width. The opening of spin channels of the heterostructure depends on the matching of particular electronic orbitals in the Mo-dominated edges of ZMoS 2 NR-H and ZMoS 2 NR. Perfect spin filter effect appears at small bias voltages, and large negative differential resistance and rectifying effects are also observed in the heterostructure.

Research Update: Spin transfer torques in permalloy on monolayer MoS2

Directory of Open Access Journals (Sweden)

Wei Zhang

2016-03-01

Full Text Available We observe current induced spin transfer torque resonance in permalloy (Py grown on monolayer MoS2. By passing rf current through the Py/MoS2 bilayer, field-like and damping-like torques are induced which excite the ferromagnetic resonance of Py. The signals are detected via a homodyne voltage from anisotropic magnetoresistance of Py. In comparison to other bilayer systems with strong spin-orbit torques, the monolayer MoS2 cannot provide bulk spin Hall effects and thus indicates the purely interfacial nature of the spin transfer torques. Therefore our results indicate the potential of two-dimensional transition-metal dichalcogenide for the use of interfacial spin-orbitronics applications.

Spectroscopic Signatures for Interlayer Coupling in MoS 2 –WSe 2 van der Waals Stacking

KAUST Repository

Chiu, Ming-Hui; Li, Ming-Yang; Zhang, Wengjing; Hsu, Wei-Ting; Chang, Wen-Hao; Terrones, Mauricio; Terrones, Humberto; Li, Lain-Jong

2014-01-01

Stacking of MoS2 and WSe2 monolayers is conducted by transferring triangular MoS2 monolayers on top of WSe2 monolayers, all grown by chemical vapor deposition (CVD). Raman spectroscopy and photoluminescence (PL) studies reveal that these mechanically stacked monolayers are not closely coupled, but after a thermal treatment at 300 degrees C, it is possible to produce van der Waals solids consisting of two interacting transition metal dichalcogenide (TMD) monolayers. The layer-number sensitive Raman out-of-plane mode A(1g)(2) for WSe2 (309 cm(-1)) is found sensitive to the coupling between two TMD monolayers. The presence of interlayer excitonic emissions and the changes in other intrinsic Raman modes such as E '' for MoS2 at 286 cm(-1) and A(1g)(2) for MoS2 at around 463 cm(-1) confirm the enhancement of the interlayer coupling.

Spectroscopic Signatures for Interlayer Coupling in MoS 2 –WSe 2 van der Waals Stacking

KAUST Repository

Chiu, Ming-Hui

2014-09-23

Stacking of MoS2 and WSe2 monolayers is conducted by transferring triangular MoS2 monolayers on top of WSe2 monolayers, all grown by chemical vapor deposition (CVD). Raman spectroscopy and photoluminescence (PL) studies reveal that these mechanically stacked monolayers are not closely coupled, but after a thermal treatment at 300 degrees C, it is possible to produce van der Waals solids consisting of two interacting transition metal dichalcogenide (TMD) monolayers. The layer-number sensitive Raman out-of-plane mode A(1g)(2) for WSe2 (309 cm(-1)) is found sensitive to the coupling between two TMD monolayers. The presence of interlayer excitonic emissions and the changes in other intrinsic Raman modes such as E \\'\\' for MoS2 at 286 cm(-1) and A(1g)(2) for MoS2 at around 463 cm(-1) confirm the enhancement of the interlayer coupling.

Compensated readout for high-density MOS-gated memristor crossbar array

KAUST Repository

Zidan, Mohammed A.

2015-01-01

Leakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor array.

Activating basal-plane catalytic activity of two-dimensional MoS2 monolayer with remote hydrogen plasma

KAUST Repository

Cheng, Chia-Chin; Lu, Ang-Yu; Tseng, Chien-Chih; Yang, Xiulin; Hedhili, Mohamed N.; Chen, Min-Cheng; Wei, Kung-Hwa; Li, Lain-Jong

2016-01-01

that account for a small percentage of the surface area, rather than the basal planes, of MoS2 monolayer have been confirmed as their active catalytic sites. As a result, extensive efforts have been developing in activating the basal planes of MoS2

Direct laser-patterned micro-supercapacitors from paintable MoS2 films.

Science.gov (United States)

Cao, Liujun; Yang, Shubin; Gao, Wei; Liu, Zheng; Gong, Yongji; Ma, Lulu; Shi, Gang; Lei, Sidong; Zhang, Yunhuai; Zhang, Shengtao; Vajtai, Robert; Ajayan, Pulickel M

2013-09-09

Micrometer-sized electrochemical capacitors have recently attracted attention due to their possible applications in micro-electronic devices. Here, a new approach to large-scale fabrication of high-capacitance, two-dimensional MoS2 film-based micro-supercapacitors is demonstrated via simple and low-cost spray painting of MoS2 nanosheets on Si/SiO2 chip and subsequent laser patterning. The obtained micro-supercapacitors are well defined by ten interdigitated electrodes (five electrodes per polarity) with 4.5 mm length, 820 μm wide for each electrode, 200 μm spacing between two electrodes and the thickness of electrode is ∼0.45 μm. The optimum MoS2 -based micro-supercapacitor exhibits excellent electrochemical performance for energy storage with aqueous electrolytes, with a high area capacitance of 8 mF cm(-2) (volumetric capacitance of 178 F cm(-3) ) and excellent cyclic performance, superior to reported graphene-based micro-supercapacitors. This strategy could provide a good opportunity to develop various micro-/nanosized energy storage devices to satisfy the requirements of portable, flexible, and transparent micro-electronic devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Resonant enhancement of band-to-band tunneling in in-plane MoS2/WS2 heterojunctions

Science.gov (United States)

Kuroda, Tatsuya; Mori, Nobuya

2018-04-01

The band-to-band (BTB) tunneling current J through in-plane MoS2/WS2 heterojunctions is calculated by the nonequilibrium Green function method combined with tight-binding approximation. Types A and B of band configurations are considered. For type-A (type-B) heterojunctions, a potential notch exists (or is absent) at the heterointerface. Both type-A and type-B MoS2/WS2 heterojunctions can support a higher BTB current than MoS2 and WS2 homojunctions. For type-A heterojunctions, the resonant enhancement of J occurs resulting in a significantly higher BTB tunneling current.

Synthesis of rambutan-like MoS2/mesoporous carbon spheres nanocomposites with excellent performance for supercapacitors

Science.gov (United States)

Zhang, Shouchuan; Hu, Ruirui; Dai, Peng; Yu, Xinxin; Ding, Zongling; Wu, Mingzai; Li, Guang; Ma, Yongqing; Tu, Chuanjun

2017-02-01

A novel rambutan-like composite of MoS2/mesoporous carbon spheres were synthesized by a simple two-step hydrothermal and post-annealing approach via using glucose as C source and Na2MoO4·2H2O and thiourea as Mo and S sources. It is found that the morphology and electrochemical properties can be effectively controlled by the change of the weight ratio of coated MoS2 sheets to carbon spheres. When used as electrode material for supercapacitor, the hybrid MoS2/carbon spheres show a high specific capacity of 411 F/g at a current density of 1 A/g and 272 F/g at a high discharge current density of 10 A/g. The annealing treatment at 700 °C transformed the core carbon spheres into mesoporous ones, which served as the conduction network and favor the enhancement of the specific capacitance. In addition, the strain released during the charge/discharge process can be accommodated and the structural integrity can be kept, improving the cycling life. After 1000 cycles, the capacitance retention of the hybrid MoS2/carbon spheres is 93.2%.

Stability of defects in monolayer MoS_2 and their interaction with O_2 molecule: A first-principles study

International Nuclear Information System (INIS)

Zhao, B.; Shang, C.; Qi, N.; Chen, Z.Y.; Chen, Z.Q.

2017-01-01

Highlights: • Defects can exist steadily in monolayer MoS_2 and break surface chemical inertness. • Activated surfaces are beneficial to the adsorption of O_2 through the introduction of defect levels. • Adsorbed O_2 on defective surface can dissociate with low activation energy barrier. • Defective system may be a potential substrate to design MoS_2-based gas sensor or catalysts. - Abstract: The stability of various defects in monolayer MoS_2, as well as their interactions with free O_2 molecules were investigated by density functional theory (DFT) calculations coupled with the nudged elastic band (NEB) method. The defects including S vacancy (monosulfur and disulfue vacancies), antisite defect (Mo_S) and external Mo atom can exist steadily in monolayer MoS_2, and introduce defect levels in these defective systems, which breaks the surface chemical inertness and significantly enhances the adsorption capacity for free O_2. The adsorption energy calculations and electronic properties analysis suggest that there is a strong interaction between O_2 molecule and defective system. The adsorbed O_2 on the defective surface can dissociate with a lower activation energy barrier, which produce two active oxygen atoms. Especially, two Mo atoms can occupy one Mo lattice site, and adsorbed O_2 on the top of the Mo atom can then dissociate directly with the lowest activation energy barrier. Hence, our work may provide useful information to design MoS_2-based gas sensor or catalysts.

Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in ZrO2 gate material

International Nuclear Information System (INIS)

Lee, Hye-Ryoung; Choi, Samjong; Cho, Kyoungah; Kim, Sangsig

2007-01-01

Capacitance versus voltage (C-V) curves of Ge-nanocrystals (NCs)-embedded metal-oxide-semiconductor (MOS) capacitors are characterized in this work. Ge NCs were formed in 20-nm thick ZrO 2 gate layers by ion implantation and subsequent annealing procedures. The formation of the Ge NCs in the ZrO 2 gate layers was confirmed by high-resolution transmission electron microscopy and energy dispersive spectroscopy. The C-V curves obtained from a representative MOS capacitor embedded with the Ge NCs exhibit a 3 V memory window as bias voltage varied from 9 to - 9 V and then back to the initial positive voltage, whereas MOS capacitors without Ge NCs show negligible memory windows at the same voltage range. This indicates the presence of charge storages in the Ge NCs. The counterclockwise hysteresis observed from the C-V curves implies that electrons are trapped in Ge NCs presented inside the ZrO 2 gate layer. And our experimental results obtained from capacitance versus time measurements show good retention characteristics of Ge-NCs-embedded MOS capacitors with ZrO 2 gate material for the application of NFGM

Fabrication of TiO2/MoS2@zeolite photocatalyst and its photocatalytic activity for degradation of methyl orange under visible light

International Nuclear Information System (INIS)

Zhang, Weiping; Xiao, Xinyan; Zheng, Lili; Wan, Caixia

2015-01-01

Graphical abstract: A novel approach was developed for fabrication of TiO 2 /MoS 2 @zeolite photocatalyst using bulk MoS 2 as a photosensitizer and zeolite as carrier. The as-prepared TiO 2 /MoS 2 @zeolite composite exhibited excellent photocatalytic performance for degradation of methyl orange under visible-light irradiation. - Highlights: • Ultrasound-exfoliation and hydrothermal reforming technique were employed for generating nano-MoS 2 from micro-MoS 2 . • The embedded sensitizer composite mode of (TiO 2 /MoS 2 /TiO 2 ) was used in the fabrication of TiO 2 /MoS 2 @zeolite composite photocatalyst. • The photocatalytic mechanism of TiO 2 /MoS 2 @zeolite photocatalyst was presented. - Abstract: TiO 2 /MoS 2 @zeolite composite photocatalysts with visible-light activity were fabricated via a simple ultrasonic-hydrothermal synthesis method, using TiCl 4 as Ti source, MoS 2 as a direct sensitizer, glycerol water solution with certain dispersion agent as hydrolytic agent, and zeolite as carrier. The structure, morphology, composition, optical properties, and specific surface area of the as-prepared photocatalysts were characterized by using XRD, FTIR, SEM–EDS, TEM, XPS, UV–vis, PL and BET analyzer, respectively. And the photocatalytic degradation of methyl orange (MO) in aqueous suspension has been employed to evaluate the photocatalytic activity and degradation kinetics of as-prepared photocatalysts with xenon lamp as irradiation source. The results indicate that: (1) TiO 2 /MoS 2 @zeolite composite photocatalysts exhibit enhanced photocatalytic activities for methyl orange (MO) degradation compared to Degussa P25; (2) photocatalytic degradation of MO obeys Langmuir–Hinshelwood kinetic model (pseudo-first order reaction), and its degradation rate constant (k app ) (2.304 h −1 ) is higher than that of Degussa P25 (0.768 h −1 ); (3) the heterostructure consisted of zeolite, MoS 2 and TiO 2 nanostructure could provide synergistic effect for degradation

Atom-Dependent Edge-Enhanced Second-Harmonic Generation on MoS2 Monolayers.

Science.gov (United States)

Lin, Kuang-I; Ho, Yen-Hung; Liu, Shu-Bai; Ciou, Jian-Jhih; Huang, Bo-Ting; Chen, Christopher; Chang, Han-Ching; Tu, Chien-Liang; Chen, Chang-Hsiao

2018-02-14

Edge morphology and lattice orientation of single-crystal molybdenum disulfide (MoS 2 ) monolayers, a transition metal dichalcogenide (TMD), possessing a triangular shape with different edges grown by chemical vapor deposition are characterized by atomic force microscopy and transmission electron microscopy. Multiphoton laser scanning microscopy is utilized to study one-dimensional atomic edges of MoS 2 monolayers with localized midgap electronic states, which result in greatly enhanced optical second-harmonic generation (SHG). Microscopic S-zigzag edge and S-Mo Klein edge (bare Mo atoms protruding from a S-zigzag edge) terminations and the edge-atom dependent resonance energies can therefore be deduced based on SHG images. Theoretical calculations based on density functional theory clearly explain the lower energy of the S-zigzag edge states compared to the corresponding S-Mo Klein edge states. Characterization of the atomic-scale variation of edge-enhanced SHG is a step forward in this full-optical and high-yield technique of atomic-layer TMDs.

Spectroscopy, microscopy and theoretical study of NO adsorption on MoS2 and Co-Mo-S hydrotreating catalysts

DEFF Research Database (Denmark)

Topsøe, Nan-Yu; Tuxen, Anders Kyrme; Hinnemann, Berit

2011-01-01

nfrared (IR) spectroscopy using NO as a probe molecule has been one of the important methods for characterizing hydrotreating catalysts, since this technique provides information on the nature and quantity of active edge sites of these catalysts. However, due to the strong adsorption of NO, which......) calculations, we present new atomic-scale insight into the nature of NO adsorption on MoS2 and Co-Mo-S nanoclusters. The DFT calculations and STM experiments show that NO does not adsorb at fully sulfided MoS2 edges not containing hydrogen. However, typical sulfided catalysts will have hydrogen present...... NO as a probe molecule to obtain detailed atomic-scale information on hydrotreating catalysts and the origins of activity differences. (C) 2011 Published by Elsevier Inc....

ReaxFF Reactive Force-Field Study of Molybdenum Disulfide (MoS2).

Science.gov (United States)

Ostadhossein, Alireza; Rahnamoun, Ali; Wang, Yuanxi; Zhao, Peng; Zhang, Sulin; Crespi, Vincent H; van Duin, Adri C T

2017-02-02

Two-dimensional layers of molybdenum disulfide, MoS 2 , have been recognized as promising materials for nanoelectronics due to their exceptional electronic and optical properties. Here we develop a new ReaxFF reactive potential that can accurately describe the thermodynamic and structural properties of MoS 2 sheets, guided by extensive density functional theory simulations. This potential is then applied to the formation energies of five different types of vacancies, various vacancy migration barriers, and the transition barrier between the semiconducting 2H and metallic 1T phases. The energetics of ripplocations, a recently observed defect in van der Waals layers, is examined, and the interplay between these defects and sulfur vacancies is studied. As strain engineering of MoS 2 sheets is an effective way to manipulate the sheets' electronic and optical properties, the new ReaxFF description can provide valuable insights into morphological changes that occur under various loading conditions and defect distributions, thus allowing one to tailor the electronic properties of these 2D crystals.

Evaluation of pulsed laser annealing for flexible multilayer MoS2 transistors

International Nuclear Information System (INIS)

Kwon, Hyuk-Jun; Grigoropoulos, Costas P.; Kim, Sunkook; Jang, Jaewon

2015-01-01

To realize the proper electrical characteristics of field-effect transistors, the quality of the contact and interface must be improved because they can substantially distort the extracted mobility, especially for materials with low densities of states like molybdenum disulfide (MoS 2 ). We show that mechanically flexible MoS 2 thin-film transistors (TFTs) with selectively laser annealed source/drain electrodes achieve enhanced device performance without plastic deformation including higher field-effect mobility (from 19.59 to 45.91 cm 2  V −1  s −1 ) in the linear regime, decreased subthreshold swing, and enhanced current saturation. Furthermore, numerical thermal simulations, measured current-voltage characteristics, and contact-free mobility extracted from the Y-function method suggest that the enhanced performance originated from a decrease in the Schottky barrier effect at the contact and an improvement of the channel interface. These results demonstrate that picosecond laser annealing can be a promising technology for building high performance flexible MoS 2 TFTs in flexible/stretchable circuitry, which should be processed at low temperatures

Photovoltaic heterojunctions of fullerenes with MoS2 and WS2 monolayers

KAUST Repository

Gan, Liyong

2014-04-17

First-principles calculations are performed to explore the geometry, bonding, and electronic structures of six ultrathin photovoltaic heterostructures consisting of pristine and B- or N-doped fullerenes and MoS2 or WS2 monolayers. The fullerenes prefer to be attached with a hexagon parallel to the monolayer, where B and N favor proximity to the monolayer. The main electronic properties of the subsystems stay intact, suggesting weak interfacial interaction. Both the C60/MoS 2 and C60/WS2 systems show type-II band alignments. However, the built-in potential in the former case is too small to effectively drive electron-hole separation across the interface, whereas the latter system is predicted to show good photovoltaic performance. Unfortunately, B and N doping destroys the type-II band alignment on MoS2 and preserves it only in one spin channel on WS2, which is unsuitable for excitonic solar cells. Our results suggest that the C60/WS 2 system is highly promising for excitonic solar cells. © 2014 American Chemical Society.

Quantitative analysis of trap states through the behavior of the sulfur ions in MoS2 FETs following high vacuum annealing

Science.gov (United States)

Bae, Hagyoul; Jun, Sungwoo; Kim, Choong-Ki; Ju, Byeong-Kwon; Choi, Yang-Kyu

2018-03-01

Few-layer molybdenum disulfide (MoS2) has attracted a great deal of attention as a semiconductor material for electronic and optoelectronic devices. However, the presence of localized states inside the bandgap is a critical issue that must be addressed to improve the applicability of MoS2 technology. In this work, we investigated the density of states (DOS: g(E)) inside the bandgap of MoS2 FET by using a current-voltage (I-V) analysis technique with the aid of high vacuum annealing (HVA). The g(E) can be obtained by combining the trap density and surface potential (ψ S) extracted from a consistent subthreshold current (I D-sub). The electrical performance of MoS2 FETs is strongly dependent on the inherent defects, which are closely related to the g(E) in the MoS2 active layer. By applying the proposed technique to the MoS2 FETs, we were able to successfully characterize the g(E) after stabilization of the traps by the HVA, which reduces the hysteresis distorting the intrinsic g(E). Also, the change of sulfur ions in MoS2 film before and after the HVA treatment is investigated directly by Auger electron spectroscopy analysis. The proposed technique provides a new methodology for active channel engineering of 2D channel based FETs such as MoS2, MoTe2, WSe2, and WS2.

Highly sensitive wide bandwidth photodetector based on internal photoemission in CVD grown p-type MoS2/graphene Schottky junction.

Science.gov (United States)

Vabbina, PhaniKiran; Choudhary, Nitin; Chowdhury, Al-Amin; Sinha, Raju; Karabiyik, Mustafa; Das, Santanu; Choi, Wonbong; Pala, Nezih

2015-07-22

Two dimensional (2D) Molybdenum disulfide (MoS2) has evolved as a promising material for next generation optoelectronic devices owing to its unique electrical and optical properties, such as band gap modulation, high optical absorption, and increased luminescence quantum yield. The 2D MoS2 photodetectors reported in the literature have presented low responsivity compared to silicon based photodetectors. In this study, we assembled atomically thin p-type MoS2 with graphene to form a MoS2/graphene Schottky photodetector where photo generated holes travel from graphene to MoS2 over the Schottky barrier under illumination. We found that the p-type MoS2 forms a Schottky junction with graphene with a barrier height of 139 meV, which results in high photocurrent and wide spectral range of detection with wavelength selectivity. The fabricated photodetector showed excellent photosensitivity with a maximum photo responsivity of 1.26 AW(-1) and a noise equivalent power of 7.8 × 10(-12) W/√Hz at 1440 nm.

Near-unity photoluminescence quantum yield in MoS2

KAUST Repository

Amani, Matin

2015-11-26

Two-dimensional (2D) transition metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure of merit, the room-temperature photoluminescence quantum yield (QY), is extremely low.The prototypical 2D material molybdenum disulfide (MoS2) is reported to have a maximum QYof 0.6%, which indicates a considerable defect density. Herewe report on an air-stable, solution-based chemical treatment by an organic superacid, which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by more than two orders of magnitude.The treatment eliminates defect-mediated nonradiative recombination, thus resulting in a finalQYofmore than 95%, with a longest-observed lifetime of 10.8 0.6 nanoseconds. Our ability to obtain optoelectronic monolayers with near-perfect properties opens the door for the development of highly efficient light-emitting diodes, lasers, and solar cells based on 2D materials.

Near-unity photoluminescence quantum yield in MoS2

KAUST Repository

Amani, Matin; Lien, Der Hsien; Kiriya, Daisuke; Xiao, Jun; Azcatl, Angelica; Noh, Jiyoung; Madhvapathy, Surabhi R.; Addou, Rafik; Santosh, K. C.; Dubey, Madan; Cho, Kyeongjae; Wallace, Robert M.; Lee, Si Chen; He, Jr-Hau; Ager, Joel W.; Zhang, Xiang; Yablonovitch, Eli; Javey, Ali

2015-01-01

Two-dimensional (2D) transition metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure of merit, the room-temperature photoluminescence quantum yield (QY), is extremely low.The prototypical 2D material molybdenum disulfide (MoS2) is reported to have a maximum QYof 0.6%, which indicates a considerable defect density. Herewe report on an air-stable, solution-based chemical treatment by an organic superacid, which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by more than two orders of magnitude.The treatment eliminates defect-mediated nonradiative recombination, thus resulting in a finalQYofmore than 95%, with a longest-observed lifetime of 10.8 0.6 nanoseconds. Our ability to obtain optoelectronic monolayers with near-perfect properties opens the door for the development of highly efficient light-emitting diodes, lasers, and solar cells based on 2D materials.

Electrochemical synthesis of MoS2 quantum dots embedded nanostructured porous silicon with enhanced electroluminescence property

Science.gov (United States)

Shrivastava, Megha; Kumari, Reeta; Parra, Mohammad Ramzan; Pandey, Padmini; Siddiqui, Hafsa; Haque, Fozia Z.

2017-11-01

In this report we present the successful enhancement in electroluminescence (EL) in nanostructured n-type porous silicon (PS) with an idea of embedding luminophorous Molybdenum disulfide (MoS2) quantum dots (QD's). Electrochemical anodization technique was used for the formation of PS surface and MoS2 QD's were prepared using the electrochemical route. Spin coating technique was employed for the proper incorporation of MoS2 QD's within the PS nanostructures. The crystallographic analysis was performed using X-ray diffraction (XRD), Raman and Fourier transform infrared (FT-IR) spectroscopy techniques. However, surface morphology was determined using Transmission electron microscopy (TEM) and Atomic force microscopy (AFM). The optical measurements were performed on photoluminescence (PL) spectrophotometer; additionally for electroluminescence (EL) study special arrangement of instrumental setup was made at laboratory level which provides novelty to this work. A diode prototype was made comprising Ag/MoS2:PS/Silicon/Ag for EL study. The MoS2:PS shows a remarkable concentration dependent enhancement in PL as well as in EL intensities, which paves a way to better utilize this strategy in optoelectronic device applications.

Strictly monolayer large continuous MoS2 films on diverse substrates and their luminescence properties

International Nuclear Information System (INIS)

Mohapatra, P. K.; Deb, S.; Singh, B. P.; Vasa, P.; Dhar, S.

2016-01-01

Despite a tremendous interest on molybdenum disulfide as a thinnest direct band gap semiconductor, single step synthesis of a large area purely monolayer MoS 2 film has not yet been reported. Here, we report a CVD route to synthesize a continuous film of strictly monolayer MoS 2 covering an area as large as a few cm 2 on a variety of different substrates without using any seeding material or any elaborate pretreatment of the substrate. This is achieved by allowing the growth to take place in the naturally formed gap between a piece of SiO 2 coated Si wafer and the substrate, when the latter is placed on top of the former inside a CVD reactor. We propose a qualitative model to explain why the MoS 2 films are always strictly monolayer in this method. The photoluminescence study of these monolayers shows the characteristic excitonic and trionic features associated with monolayer MoS 2 . In addition, a broad defect related luminescence band appears at ∼1.7 eV. As temperature decreases, the intensity of this broad feature increases, while the band edge luminescence reduces

Relation between film thickness and surface doping of MoS2 based field effect transistors

Science.gov (United States)

Lockhart de la Rosa, César J.; Arutchelvan, Goutham; Leonhardt, Alessandra; Huyghebaert, Cedric; Radu, Iuliana; Heyns, Marc; De Gendt, Stefan

2018-05-01

Ultra-thin MoS2 film doping through surface functionalization with physically adsorbed species is of great interest due to its ability to dope the film without reduction in the carrier mobility. However, there is a need for understanding how the thickness of the MoS2 film is related to the induced surface doping for improved electrical performance. In this work, we report on the relation of MoS2 film thickness with the doping effect induced by the n-dopant adsorbate poly(vinyl-alcohol). Field effect transistors built using MoS2 films of different thicknesses were electrically characterized, and it was observed that the ION/OFF ratio after doping in thin films is more than four orders of magnitudes greater when compared with thick films. Additionally, a semi-classical model tuned with the experimental devices was used to understand the spatial distribution of charge in the channel and explain the observed behavior. From the simulation results, it was revealed that the two-dimensional carrier density induced by the adsorbate is distributed rather uniformly along the complete channel for thin films (<5.2 nm) contrary to what happens for thicker films.

Fabrication of Z-scheme Ag3PO4/MoS2 composites with enhanced photocatalytic activity and stability for organic pollutant degradation

International Nuclear Information System (INIS)

Zhu, Chaosheng; Zhang, Lu; Jiang, Bo; Zheng, Jingtang; Hu, Ping; Li, Sujuan; Wu, Mingbo; Wu, Wenting

2016-01-01

Highlights: • Ag 3 PO 4 /MoS 2 composite photocatalysts were prepared by precipitation method. • The composites showed enhanced visible-light photocatalytic activity. • The photocorrosion of Ag 3 PO 4 was inhibited due to the introduction of MoS 2 . • Z-scheme mechanism was proposed to explain the enhanced photoactivity. - Abstract: In this study, highly efficient visible-light-driven Ag 3 PO 4 /MoS 2 composite photocatalysts with different weight ratios of MoS 2 were prepared via the ethanol-water mixed solvents precipitation method and characterized by ICP, XRD, HRTEM, FE-SEM, BET, XPS, UV–vis DRS and PL analysis. Under visible-light irradiation, Ag 3 PO 4 /MoS 2 composites exhibit excellent photocatalytic activity towards the degradation of organic pollutants in aqueous solution. The optimal composite with 0.648 wt% MoS 2 content exhibits the highest photocatalytic activity, which can degrade almost all MB under visible-light irradiation within 60 min. Recycling experiments confirmed that the Ag 3 PO 4 /MoS 2 catalysts had superior cycle performance and stability. The photocatalytic activity enhancement of Ag 3 PO 4 /MoS 2 photocatalysts can be mainly ascribed to the efficient separation of photogenerated charge carriers and the stronger oxidation and reduction ability through a Z-scheme system composed of Ag 3 PO 4 , Ag and MoS 2 , in which Ag particles act as the charge separation center. The high photocatalytic stability is due to the successful inhibition of the photocorrosion of Ag 3 PO 4 by transferring the photogenerated electrons of Ag 3 PO 4 to MoS 2 . The evidence of the Z-scheme photocatalytic mechanism of the composite photocatalysts could be obtained from the active species trapping experiments and the photoluminescence technique.

Influence of Gas Adsorption and Gold Nanoparticles on the Electrical Properties of CVD-Grown MoS2 Thin Films.

Science.gov (United States)

Cho, Yunae; Sohn, Ahrum; Kim, Sujung; Hahm, Myung Gwan; Kim, Dong-Ho; Cho, Byungjin; Kim, Dong-Wook

2016-08-24

Molybdenum disulfide (MoS2) has increasingly attracted attention from researchers and is now one of the most intensively explored atomic-layered two-dimensional semiconductors. Control of the carrier concentration and doping type of MoS2 is crucial for its application in electronic and optoelectronic devices. Because the MoS2 layers are atomically thin, their transport characteristics may be very sensitive to ambient gas adsorption and the resulting charge transfer. We investigated the influence of the ambient gas (N2, H2/N2, and O2) choice on the resistance (R) and surface work function (WF) of trilayer MoS2 thin films grown via chemical vapor deposition. We also studied the electrical properties of gold (Au)-nanoparticle (NP)-coated MoS2 thin films; their R value was found to be 2 orders of magnitude smaller than that for bare samples. While the WF largely varied for each gas, R was almost invariant for both the bare and Au-NP-coated samples regardless of which gas was used. Temperature-dependent transport suggests that variable range hopping is the dominant mechanism for electrical conduction for bare and Au-NP-coated MoS2 thin films. The charges transferred from the gas adsorbates might be insufficient to induce measurable R change and/or be trapped in the defect states. The smaller WF and larger localization length of the Au-NP-coated sample, compared with the bare sample, suggest that more carriers and less defects enhanced conduction in MoS2.

Boosting Two-Dimensional MoS2/CsPbBr3 Photodetectors via Enhanced Light Absorbance and Interfacial Carrier Separation.

Science.gov (United States)

Song, Xiufeng; Liu, Xuhai; Yu, Dejian; Huo, Chengxue; Ji, Jianping; Li, Xiaoming; Zhang, Shengli; Zou, Yousheng; Zhu, Gangyi; Wang, Yongjin; Wu, Mingzai; Xie, An; Zeng, Haibo

2018-01-24

Transition metal dichalcogenides (TMDs) are promising candidates for flexible optoelectronic devices because of their special structures and excellent properties, but the low optical absorption of the ultrathin layers greatly limits the generation of photocarriers and restricts the performance. Here, we integrate all-inorganic perovskite CsPbBr 3 nanosheets with MoS 2 atomic layers and take the advantage of the large absorption coefficient and high quantum efficiency of the perovskites, to achieve excellent performance of the TMD-based photodetectors. Significantly, the interfacial charge transfer from the CsPbBr 3 to the MoS 2 layer has been evidenced by the observed photoluminescence quenching and shortened decay time of the hybrid MoS 2 /CsPbBr 3 . Resultantly, such a hybrid MoS 2 /CsPbBr 3 photodetector exhibits a high photoresponsivity of 4.4 A/W, an external quantum efficiency of 302%, and a detectivity of 2.5 × 10 10 Jones because of the high efficient photoexcited carrier separation at the interface of MoS 2 and CsPbBr 3 . The photoresponsivity of this hybrid device presents an improvement of 3 orders of magnitude compared with that of a MoS 2 device without CsPbBr 3 . The response time of the device is also shortened from 65.2 to 0.72 ms after coupling with MoS 2 layers. The combination of the all-inorganic perovskite layer with high photon absorption and the carrier transport TMD layer may pave the way for novel high-performance optoelectronic devices.

Plasmonic Gold Nanorods Coverage Influence on Enhancement of the Photoluminescence of Two-Dimensional MoS2 Monolayer

KAUST Repository

Lee, Kevin C. J.

2015-11-17

The 2-D transition metal dichalcogenide (TMD) semiconductors, has received great attention due to its excellent optical and electronic properties and potential applications in field-effect transistors, light emitting and sensing devices. Recently surface plasmon enhanced photoluminescence (PL) of the weak 2-D TMD atomic layers was developed to realize the potential optoelectronic devices. However, we noticed that the enhancement would not increase monotonically with increasing of metal plasmonic objects and the emission drop after the certain coverage. This study presents the optimized PL enhancement of a monolayer MoS2 in the presence of gold (Au) nanorods. A localized surface plasmon wave of Au nanorods that generated around the monolayer MoS2 can provide resonance wavelength overlapping with that of the MoS2 gain spectrum. These spatial and spectral overlapping between the localized surface plasmon polariton waves and that from MoS2 emission drastically enhanced the light emission from the MoS2 monolayer. We gave a simple model and physical interpretations to explain the phenomena. The plasmonic Au nanostructures approach provides a valuable avenue to enhancing the emitting efficiency of the 2-D nano-materials and their devices for the future optoelectronic devices and systems.

Plasmonic Gold Nanorods Coverage Influence on Enhancement of the Photoluminescence of Two-Dimensional MoS2 Monolayer

KAUST Repository

Lee, Kevin C. J.; Chen, Yi-Huan; Lin, Hsiang-Yu; Cheng, Chia-Chin; Chen, Pei-Ying; Wu, Ting-Yi; Shih, Min-Hsiung; Wei, Kung-Hwa; Li, Lain-Jong; Chang, Chien-Wen

2015-01-01

The 2-D transition metal dichalcogenide (TMD) semiconductors, has received great attention due to its excellent optical and electronic properties and potential applications in field-effect transistors, light emitting and sensing devices. Recently surface plasmon enhanced photoluminescence (PL) of the weak 2-D TMD atomic layers was developed to realize the potential optoelectronic devices. However, we noticed that the enhancement would not increase monotonically with increasing of metal plasmonic objects and the emission drop after the certain coverage. This study presents the optimized PL enhancement of a monolayer MoS2 in the presence of gold (Au) nanorods. A localized surface plasmon wave of Au nanorods that generated around the monolayer MoS2 can provide resonance wavelength overlapping with that of the MoS2 gain spectrum. These spatial and spectral overlapping between the localized surface plasmon polariton waves and that from MoS2 emission drastically enhanced the light emission from the MoS2 monolayer. We gave a simple model and physical interpretations to explain the phenomena. The plasmonic Au nanostructures approach provides a valuable avenue to enhancing the emitting efficiency of the 2-D nano-materials and their devices for the future optoelectronic devices and systems.

Highly Uniform Atomic Layer-Deposited MoS2@3D-Ni-Foam: A Novel Approach To Prepare an Electrode for Supercapacitors.

Science.gov (United States)

Nandi, Dip K; Sahoo, Sumanta; Sinha, Soumyadeep; Yeo, Seungmin; Kim, Hyungjun; Bulakhe, Ravindra N; Heo, Jaeyeong; Shim, Jae-Jin; Kim, Soo-Hyun

2017-11-22

This article takes an effort to establish the potential of atomic layer deposition (ALD) technique toward the field of supercapacitors by preparing molybdenum disulfide (MoS 2 ) as its electrode. While molybdenum hexacarbonyl [Mo(CO) 6 ] serves as a novel precursor toward the low-temperature synthesis of ALD-grown MoS 2 , H 2 S plasma helps to deposit its polycrystalline phase at 200 °C. Several ex situ characterizations such as X-ray diffractometry (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and so forth are performed in detail to study the as-grown MoS 2 film on a Si/SiO 2 substrate. While stoichiometric MoS 2 with very negligible amount of C and O impurities was evident from XPS, the XRD and high-resolution transmission electron microscopy analyses confirmed the (002)-oriented polycrystalline h-MoS 2 phase of the as-grown film. A comparative study of ALD-grown MoS 2 as a supercapacitor electrode on 2-dimensional stainless steel and on 3-dimensional (3D) Ni-foam substrates clearly reflects the advantage and the potential of ALD for growing a uniform and conformal electrode material on a 3D-scaffold layer. Cyclic voltammetry measurements showed both double-layer capacitance and capacitance contributed by the faradic reaction at the MoS 2 electrode surface. The optimum number of ALD cycles was also found out for achieving maximum capacitance for such a MoS 2 @3D-Ni-foam electrode. A record high areal capacitance of 3400 mF/cm 2 was achieved for MoS 2 @3D-Ni-foam grown by 400 ALD cycles at a current density of 3 mA/cm 2 . Moreover, the ALD-grown MoS 2 @3D-Ni-foam composite also retains high areal capacitance, even up to a high current density of 50 mA/cm 2 . Finally, this directly grown MoS 2 electrode on 3D-Ni-foam by ALD shows high cyclic stability (>80%) over 4500 charge-discharge cycles which must invoke the research community to further explore the potential of ALD for such applications.

FeS2-doped MoS2 nanoflower with the dominant 1T-MoS2 phase as an excellent electrocatalyst for high-performance hydrogen evolution

International Nuclear Information System (INIS)

Zhao, Xue; Ma, Xiao; Lu, Qingqing; Li, Qun; Han, Ce; Xing, Zhicai; Yang, Xiurong

2017-01-01

Well-established methods to improve the hydrogen evolution reaction (HER) performances include, but are not limited to, tailoring the morphology and electronic structure of transition metal dichalcogenides (TMDs), and doping of earth abundant chemicals such as iron pyrite FeS 2 into existing TMDs. In this work, MoS 2 nanoflowers with the majority being octahedral MoS 2 (1T-MoS 2 ) and doped with FeS 2 were prepared and applied to HER. The as-prepared catalysts were characterized by X-ray absorption fine structure at the K-edge of Mo, S, and Fe to probe the local electronic structures. The resulting nanomaterial was identified to be FeS 2 doped MoS 2 nanoflower (denoted as Fe-MoS 2 NF) with 66% 1T-MoS 2 which was the metallic phase and could drastically boost the HER properties. The Fe-MoS 2 NF exhibited high HER performance with a Tafel slope of 82 mV dec −1 and it needs 136 mV to achieve a current density of 10 mA cm −2 . The synthesis of Fe-MoS 2 NF with refined morphology and active electronic structure is expected to open a new era for improving the catalytic activity and stability of MoS 2 .

MoS2 /Rubrene van der Waals Heterostructure: Toward Ambipolar Field-Effect Transistors and Inverter Circuits.

Science.gov (United States)

He, Xuexia; Chow, WaiLeong; Liu, Fucai; Tay, BengKang; Liu, Zheng

2017-01-01

2D transition metal dichalcogenides are promising channel materials for the next-generation electronic device. Here, vertically 2D heterostructures, so called van der Waals solids, are constructed using inorganic molybdenum sulfide (MoS 2 ) few layers and organic crystal - 5,6,11,12-tetraphenylnaphthacene (rubrene). In this work, ambipolar field-effect transistors are successfully achieved based on MoS 2 and rubrene crystals with the well balanced electron and hole mobilities of 1.27 and 0.36 cm 2 V -1 s -1 , respectively. The ambipolar behavior is explained based on the band alignment of MoS 2 and rubrene. Furthermore, being a building block, the MoS 2 /rubrene ambipolar transistors are used to fabricate CMOS (complementary metal oxide semiconductor) inverters that show good performance with a gain of 2.3 at a switching threshold voltage of -26 V. This work paves a way to the novel organic/inorganic ultrathin heterostructure based flexible electronics and optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Polymer-Derived Ceramic Functionalized MoS2 Composite Paper as a Stable Lithium-Ion Battery Electrode

Science.gov (United States)

David, L.; Bhandavat, R.; Barrera, U.; Singh, G.

2015-04-01

A facile process is demonstrated for the synthesis of layered SiCN-MoS2 structure via pyrolysis of polysilazane functionalized MoS2 flakes. The layered morphology and polymer to ceramic transformation on MoS2 surfaces was confirmed by use of electron microscopy and spectroscopic techniques. Tested as thick film electrode in a Li-ion battery half-cell, SiCN-MoS2 showed the classical three-stage reaction with improved cycling stability and capacity retention than neat MoS2. Contribution of conversion reaction of Li/MoS2 system on overall capacity was marginally affected by the presence of SiCN while Li-irreversibility arising from electrolyte decomposition was greatly suppressed. This is understood as one of the reasons for decreased first cycle loss and increased capacity retention. SiCN-MoS2 in the form of self-supporting paper electrode (at 6 mg.cm-2) exhibited even better performance, regaining initial charge capacity of approximately 530 mAh.g-1 when the current density returned to 100 mA.g-1 after continuous cycling at 2400 mA.g-1 (192 mAh.g-1). MoS2 cycled electrode showed mud-cracks and film delamination whereas SiCN-MoS2 electrodes were intact and covered with a uniform solid electrolyte interphase coating. Taken together, our results suggest that molecular level interfacing with precursor-derived SiCN is an effective strategy for suppressing the metal-sulfide/electrolyte degradation reaction at low discharge potentials.

Role of interlayer coupling in ultra thin MoS2

KAUST Repository

Cheng, Yingchun; Zhu, Zhiyong; Schwingenschlö gl, Udo

2012-01-01

The effects of interlayer coupling on the vibrational and electronic properties of ultra thin MoS 2 were studied by ab initio calculations. For smaller slab thickness, the interlayer distance is significantly elongated because of reduced interlayer

High current density 2D/3D MoS2/GaN Esaki tunnel diodes

Science.gov (United States)

Krishnamoorthy, Sriram; Lee, Edwin W.; Lee, Choong Hee; Zhang, Yuewei; McCulloch, William D.; Johnson, Jared M.; Hwang, Jinwoo; Wu, Yiying; Rajan, Siddharth

2016-10-01

The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hysteresis was measured in the MoS2/GaN non-epitaxial tunnel diode. A high current density of 1 kA/cm2 was measured in the Zener mode (reverse bias) at -1 V bias. The GaN/MoS2 tunnel junction was also modeled by treating MoS2 as a bulk semiconductor, and the electrostatics at the 2D/3D interface was found to be crucial in explaining the experimentally observed device characteristics.

Raman enhancement effect on two-dimensional layered materials: graphene, h-BN and MoS2.

Science.gov (United States)

Ling, Xi; Fang, Wenjing; Lee, Yi-Hsien; Araujo, Paulo T; Zhang, Xu; Rodriguez-Nieva, Joaquin F; Lin, Yuxuan; Zhang, Jin; Kong, Jing; Dresselhaus, Mildred S

2014-06-11

Realizing Raman enhancement on a flat surface has become increasingly attractive after the discovery of graphene-enhanced Raman scattering (GERS). Two-dimensional (2D) layered materials, exhibiting a flat surface without dangling bonds, were thought to be strong candidates for both fundamental studies of this Raman enhancement effect and its extension to meet practical applications requirements. Here, we study the Raman enhancement effect on graphene, hexagonal boron nitride (h-BN), and molybdenum disulfide (MoS2), by using the copper phthalocyanine (CuPc) molecule as a probe. This molecule can sit on these layered materials in a face-on configuration. However, it is found that the Raman enhancement effect, which is observable on graphene, hBN, and MoS2, has different enhancement factors for the different vibrational modes of CuPc, depending strongly on the surfaces. Higher-frequency phonon modes of CuPc (such as those at 1342, 1452, 1531 cm(-1)) are enhanced more strongly on graphene than that on h-BN, while the lower frequency phonon modes of CuPc (such as those at 682, 749, 1142, 1185 cm(-1)) are enhanced more strongly on h-BN than that on graphene. MoS2 demonstrated the weakest Raman enhancement effect as a substrate among these three 2D materials. These differences are attributed to the different enhancement mechanisms related to the different electronic properties and chemical bonds exhibited by the three substrates: (1) graphene is zero-gap semiconductor and has a nonpolar C-C bond, which induces charge transfer (2) h-BN is insulating and has a strong B-N bond, while (3) MoS2 is semiconducting with the sulfur atoms on the surface and has a polar covalent bond (Mo-S) with the polarity in the vertical direction to the surface. Therefore, the different Raman enhancement mechanisms differ for each material: (1) charge transfer may occur for graphene; (2) strong dipole-dipole coupling may occur for h-BN, and (3) both charge transfer and dipole-dipole coupling may

Adsorption of alkali, alkaline-earth, simple and 3d transition metal, and nonmetal atoms on monolayer MoS2

Directory of Open Access Journals (Sweden)

X. D. Li

2015-05-01

Full Text Available Single adsorption of different atoms on pristine two-dimensional monolayer MoS2 have been systematically investigated by using density functional calculations with van der Waals correction. The adatoms cover alkali metals, alkaline earth metals, main group metal, 3d-transition metals, coinage metal and nonmetal atoms. Depending on the adatom type, metallic, semimetallic or semiconducting behavior can be found in direct bandgap monolayer MoS2. Additionally, local or long-range magnetic moments of two-dimensional MoS2 sheet can also attained through the adsorption. The detailed atomic-scale knowledge of single adsorption on MoS2 monolayer is important not only for the sake of a theoretical understanding, but also device level deposition technological application.

Analysis of gate underlap channel double gate MOS transistor for electrical detection of bio-molecules

Science.gov (United States)

Ajay; Narang, Rakhi; Saxena, Manoj; Gupta, Mridula

2015-12-01

In this paper, an analytical model for gate drain underlap channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG-MOSFET) for label free electrical detection of biomolecules has been proposed. The conformal mapping technique has been used to derive the expressions for surface potential, lateral electric field, energy bands (i.e. conduction and valence band) and threshold voltage (Vth). Subsequently a full drain current model to analyze the sensitivity of the biosensor has been developed. The shift in the threshold voltage and drain current (after the biomolecules interaction with the gate underlap channel region of the MOS transistor) has been used as a sensing metric. All the characteristic trends have been verified through ATLAS (SILVACO) device simulation results.

MoS2 nanosheets direct supported on reduced graphene oxide: An advanced electrocatalyst for hydrogen evolution reaction.

Directory of Open Access Journals (Sweden)

Jiamu Cao

Full Text Available Molybdenum disulfide nanosheets/reduced graphene oxide (MoS2 NSs/rGO nanohybrid as a highly effective catalyst for hydrogen evolution reaction (HER have been successfully synthesized by a facile microwave-assisted method. The results clearly reveal that direct grown of MoS2 NSs on rGO have been achieved. Electrochemical tests show that the as-prepared hybrid material exhibited excellent HER activity, with a small Tafel slope of 57 mV dec-1, an overpotential of 130 mV and remarkable cycling stability. After analysis, the observed outstanding catalytic performance can be attributed to the uniform distribution of the MoS2 NSs, which are characterized by the presence of multiple active sites as well as the effective electron transport route provided by the conductive rGO substrate. Moreover, according to the classic theory, the mechanism governing of the catalytic HER on the MoS2 NSs/rGO nanohybrid has been clarified.

Pristine Basal- and Edge-Plane-Oriented Molybdenite MoS2 Exhibiting Highly Anisotropic Properties.

Science.gov (United States)

Tan, Shu Min; Ambrosi, Adriano; Sofer, Zdenĕk; Huber, Štěpán; Sedmidubský, David; Pumera, Martin

2015-05-04

The layered structure of molybdenum disulfide (MoS2 ) is structurally similar to that of graphite, with individual sheets strongly covalently bonded within but held together through weak van der Waals interactions. This results in two distinct surfaces of MoS2 : basal and edge planes. The edge plane was theoretically predicted to be more electroactive than the basal plane, but evidence from direct experimental comparison is elusive. Herein, the first study comparing the two surfaces of MoS2 by using macroscopic crystals is presented. A careful investigation of the electrochemical properties of macroscopic MoS2 pristine crystals with precise control over the exposure of one plane surface, that is, basal plane or edge plane, was performed. These crystals were characterized thoroughly by AFM, Raman spectroscopy, X-ray photoelectron spectroscopy, voltammetry, digital simulation, and DFT calculations. In the Raman spectra, the basal and edge planes show anisotropy in the preferred excitation of E2g and A1g phonon modes, respectively. The edge plane exhibits a much larger heterogeneous electron transfer rate constant k(0) of 4.96×10(-5) and 1.1×10(-3)  cm s(-1) for [Fe(CN)6 ](3-/4-) and [Ru(NH3 )6 ](3+/2+) redox probes, respectively, compared to the basal plane, which yielded k(0) tending towards zero for [Fe(CN)6 ](3-/4-) and about 9.3×10(-4)  cm s(-1) for [Ru(NH3 )6 ](3+/2+) . The industrially important hydrogen evolution reaction follows the trend observed for [Fe(CN)6 ](3-/4-) in that the basal plane is basically inactive. The experimental comparison of the edge and basal planes of MoS2 crystals is supported by DFT calculations. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Magnetic field dependence of electronic properties of MoS2 quantum dots with different edges

Science.gov (United States)

Chen, Qiao; Li, L. L.; Peeters, F. M.

2018-02-01

Using the tight-binding approach, we investigate the energy spectrum of square, triangular, and hexagonal MoS2 quantum dots (QDs) in the presence of a perpendicular magnetic field. Novel edge states emerge in MoS2 QDs, which are distributed over the whole edge which we call ring states. The ring states are robust in the presence of spin-orbit coupling (SOC). The corresponding energy levels of the ring states oscillate as a function of the perpendicular magnetic field which are related to Aharonov-Bohm oscillations. Oscillations in the magnetic field dependence of the energy levels and the peaks in the magneto-optical spectrum emerge (disappear) as the ring states are formed (collapsed). The period and the amplitude of the oscillation decrease with the size of the MoS2 QDs.

Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure

KAUST Repository

He, Xin; Li, Hai; Zhu, Zhiyong; Dai, Zhenyu; Yang, Yang; Yang, Peng; Zhang, Qiang; Li, Peng; Schwingenschlö gl, Udo; Zhang, Xixiang

2016-01-01

Mechanically exfoliated monolayers of WS2, MoS2 and their van der Waals heterostructure were fabricated on flexible substrate so that uniaxial tensile strain can be applied to the two-dimensional samples. The modification of the band structure under strain was investigated by micro-photoluminescence spectroscopy at room temperature as well as by first-principles calculations. Exciton and trion emissions were observed in both WS2 and the heterostructure at room temperature, and were redshifted by strain, indicating potential for applications in flexible electronics and optoelectronics.

Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure

KAUST Repository

He, Xin

2016-10-27

Mechanically exfoliated monolayers of WS2, MoS2 and their van der Waals heterostructure were fabricated on flexible substrate so that uniaxial tensile strain can be applied to the two-dimensional samples. The modification of the band structure under strain was investigated by micro-photoluminescence spectroscopy at room temperature as well as by first-principles calculations. Exciton and trion emissions were observed in both WS2 and the heterostructure at room temperature, and were redshifted by strain, indicating potential for applications in flexible electronics and optoelectronics.

Top-Down and Bottom-Up Approaches in Engineering 1 T Phase Molybdenum Disulfide (MoS2 ): Towards Highly Catalytically Active Materials.

Science.gov (United States)

Chua, Chun Kiang; Loo, Adeline Huiling; Pumera, Martin

2016-09-26

The metallic 1 T phase of MoS2 has been widely identified to be responsible for the improved performances of MoS2 in applications including hydrogen evolution reactions and electrochemical supercapacitors. To this aim, various synthetic methods have been reported to obtain 1 T phase-rich MoS2 . Here, the aim is to evaluate the efficiencies of the bottom-up (hydrothermal reaction) and top-down (chemical exfoliation) approaches in producing 1 T phase MoS2 . It is established in this study that the 1 T phase MoS2 produced through the bottom-up approach contains a high proportion of 1 T phase and demonstrates excellent electrochemical and electrical properties. Its performance in the hydrogen evolution reaction and electrochemical supercapacitors also surpassed that of 1 T phase MoS2 produced through a top-down approach. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Using a Floating-Gate MOS Transistor as a Transducer in a MEMS Gas Sensing System

Directory of Open Access Journals (Sweden)

Gaspar Casados-Cruz

2010-11-01

Full Text Available Floating-gate MOS transistors have been widely used in diverse analog and digital applications. One of these is as a charge sensitive device in sensors for pH measurement in solutions or using gates with metals like Pd or Pt for hydrogen sensing. Efforts are being made to monolithically integrate sensors together with controlling and signal processing electronics using standard technologies. This can be achieved with the demonstrated compatibility between available CMOS technology and MEMS technology. In this paper an in-depth analysis is done regarding the reliability of floating-gate MOS transistors when charge produced by a chemical reaction between metallic oxide thin films with either reducing or oxidizing gases is present. These chemical reactions need temperatures around 200 °C or higher to take place, so thermal insulation of the sensing area must be assured for appropriate operation of the electronics at room temperature. The operation principle of the proposal here presented is confirmed by connecting the gate of a conventional MOS transistor in series with a Fe2O3 layer. It is shown that an electrochemical potential is present on the ferrite layer when reacting with propane.

Integrated circuits and logic operations based on single-layer MoS2.

Science.gov (United States)

Radisavljevic, Branimir; Whitwick, Michael Brian; Kis, Andras

2011-12-27

Logic circuits and the ability to amplify electrical signals form the functional backbone of electronics along with the possibility to integrate multiple elements on the same chip. The miniaturization of electronic circuits is expected to reach fundamental limits in the near future. Two-dimensional materials such as single-layer MoS(2) represent the ultimate limit of miniaturization in the vertical dimension, are interesting as building blocks of low-power nanoelectronic devices, and are suitable for integration due to their planar geometry. Because they are less than 1 nm thin, 2D materials in transistors could also lead to reduced short channel effects and result in fabrication of smaller and more power-efficient transistors. Here, we report on the first integrated circuit based on a two-dimensional semiconductor MoS(2). Our integrated circuits are capable of operating as inverters, converting logical "1" into logical "0", with room-temperature voltage gain higher than 1, making them suitable for incorporation into digital circuits. We also show that electrical circuits composed of single-layer MoS(2) transistors are capable of performing the NOR logic operation, the basis from which all logical operations and full digital functionality can be deduced.

Sustainable one-step synthesis of hierarchical microspheres of PEGylated MoS2 nanosheets and MoO3 nanorods: Their cytotoxicity towards lung and breast cancer cells

International Nuclear Information System (INIS)

Kumar, Neeraj; George, Blassan Plackal Adimuriyil; Abrahamse, Heidi; Parashar, Vyom; Ngila, Jane Catherine

2017-01-01

Highlights: • Microspheres of PEGylated MoS 2 nanosheets were synthesised by hydrothermal route. • PEGylated MoS 2 have shown good cytotoxicity towards breast cancer (MCF-7) cells. • For comparison, h-MoO 3 nanorods were prepared by simple chemical route. • h-MoO 3 have exhibited excellent cytotoxicity towards lung (A549) cancer cells. - Abstract: Nanotechnology provides an emerging potent alternate mode of cancer therapy. Nanomaterials dispersion or solubility is of particular concern in utilising their full potential applications in biomedical fields. PEGylation of nanomaterials is considered to provide products with stealth properties, and physiological environment with no obvious adverse effects. The purpose of this work was to develop a sustainable one-step method for fabrication of hierarchical microspheres of PEGylated MoS 2 nanosheets using a stoichiometric ratio of Mo(VI) and thiourea. This study further investigated the cytotoxicity of the PEGylated MoS 2 nanosheets towards lung (A549) and breast cancer (MCF-7) cell lines by analysing morphological changes and performing dose-dependent cell proliferation, and cytotoxicity analysis using adenosine 5′-triphosphate (ATP), and lactate dehydrogenase (LDH) assay. For comparison, MoO 3 nanorods were synthesised by simple chemical route and their cytotoxicity towards lung (A549) and breast cancer (MCF-7) cell lines were checked. The findings suggested that PEGylated MoS 2 nanosheets have excellent cytotoxicity towards breast cancer (MCF-7) cell lines, and MoO 3 have better cytotoxicity towards lung (A549) cancer cell lines. This work envisages an accessible foundation for engineering sophisticated biomolecule–MoS 2 nanosheets conjugation due to the defect-rich biocompatible surface, to achieve great versatility, additional functions, and further advances in the biomedical field.

First-principle study of hydrogenation on monolayer MoS2

International Nuclear Information System (INIS)

Xu, Yong; Li, Yin; Chen, Xi; Zhang, Ru; Zhang, Chunfang; Lu, Pengfei

2016-01-01

The structural and electronic properties of hydrogenation on 1H-MoS 2 and 1T-MoS 2 have been systematically explored by using density functional theory (DFT) calculations. Our calculated results indicate an energetically favorable chemical interaction between H and MoS 2 monolayer for H adsorption when increasing concentration of H atoms. For 1H-MoS 2 , single H atom adsorption creates midgap approaching the Fermi level which increases the n-type carrier concentration effectively. As a consequence, its electrical conductivity is expected to increase significantly. For 1T-MoS 2 , H atoms adsorption can lead to the opening of a direct gap of 0.13 eV compared to the metallic pristine 1T-MoS 2 .

Rapid water disinfection using vertically aligned MoS_2 nanofilms and visible light

International Nuclear Information System (INIS)

Liu, Chong; Kong, Desheng; Hsu, Po-Chun; Yuan, Hongtao; Lee, Hyun-Wook

2016-01-01

Here, solar energy is readily available in most climates and can be used for water purification. However, solar disinfection of drinking water (SODIS) mostly relies on ultraviolet light, which represents only 4% of total solar energy, and this leads to slow treatment speed. The development of new materials that can harvest visible light for water disinfection, and speed up solar water purification, is therefore highly desirable. Here, we show that few-layered vertically aligned MoS_2 (FLV-MoS_2) films can be used to harvest the whole spectrum of visible light (~ 50% of solar energy) and achieve highly efficient water disinfection. The bandgap of MoS_2 was increased from 1.3 eV to 1.55 eV by decreasing the domain size, which allowed the FLV-MoS_2 to generate reactive oxygen species (ROS) for bacterial inactivation in water. The FLV-MoS_2 showed ~15 times better log inactivation efficiency of indicator bacteria compared to bulk MoS_2, and much faster inactivation of bacteria under both visible light and sunlight illumination compared to widely used TiO_2. Moreover, by using a 5 nm copper film on top of the FLV-MoS_2 as a catalyst to facilitate electron-hole pair separation and promote the generation of ROS, the disinfection rate was further increased 6 fold. With our approach, we achieved water disinfection of >99.999% inactivation of bacteria in 20 minutes with a small amount of material (1.6 mg/L) under simulated visible light.

Rapid water disinfection using vertically aligned MoS2 nanofilms and visible light

International Nuclear Information System (INIS)

Liu, Chong; Kong, Desheng; Hsu, Po-Chun; Yuan, Hongtao; Lee, Hyun-Wook

2016-01-01

In most climates, solar energy is readily available and can be used for water purification. But, solar disinfection of drinking water mostly relies on ultraviolet light, which represents only 4% of the total solar energy, and this leads to a slow treatment speed. Therefore, the development of new materials that can harvest visible light for water disinfection, and so speed up solar water purification, is highly desirable. Here we show that few-layered vertically aligned MoS_2 (FLV-MoS_2) films can be used to harvest the whole spectrum of visible light (~50% of solar energy) and achieve highly efficient water disinfection. The bandgap of MoS_2 was increased from 1.3 to 1.55 eV by decreasing the domain size, which allowed the FLV-MoS_2 to generate reactive oxygen species (ROS) for bacterial inactivation in the water. The FLV-MoS_2 showed a ~15 times better log inactivation efficiency of the indicator bacteria compared with that of bulk MoS_2, and a much faster inactivation of bacteria under both visible light and sunlight illumination compared with the widely used TiO_2. Moreover, by using a 5 nm copper film on top of the FLV-MoS_2 as a catalyst to facilitate electron–hole pair separation and promote the generation of ROS, the disinfection rate was increased a further sixfold. Here, we achieved water disinfection of >99.999% inactivation of bacteria in 20 min with a small amount of material (1.6 mg l–1) under simulated visible light.

Hydrophobic Ice Confined between Graphene and MoS2

NARCIS (Netherlands)

Bampoulis, Pantelis; Teernstra, V.J.; Lohse, Detlef; Zandvliet, Henricus J.W.; Poelsema, Bene

2016-01-01

The structure and nature of water confined between hydrophobic molybdenum disulfide (MoS2) and graphene (Gr) are investigated at room temperature by means of atomic force microscopy. We find the formation of two-dimensional (2D) crystalline ice layers. In contrast to the hexagonal ice “bilayers” of

Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS2/h-BN Heterostructure.

Science.gov (United States)

Joo, Min-Kyu; Moon, Byoung Hee; Ji, Hyunjin; Han, Gang Hee; Kim, Hyun; Lee, Gwanmu; Lim, Seong Chu; Suh, Dongseok; Lee, Young Hee

2016-10-12

Layered hexagonal boron nitride (h-BN) thin film is a dielectric that surpasses carrier mobility by reducing charge scattering with silicon oxide in diverse electronics formed with graphene and transition metal dichalcogenides. However, the h-BN effect on electron doping concentration and Schottky barrier is little known. Here, we report that use of h-BN thin film as a substrate for monolayer MoS 2 can induce ∼6.5 × 10 11 cm -2 electron doping at room temperature which was determined using theoretical flat band model and interface trap density. The saturated excess electron concentration of MoS 2 on h-BN was found to be ∼5 × 10 13 cm -2 at high temperature and was significantly reduced at low temperature. Further, the inserted h-BN enables us to reduce the Coulombic charge scattering in MoS 2 /h-BN and lower the effective Schottky barrier height by a factor of 3, which gives rise to four times enhanced the field-effect carrier mobility and an emergence of metal-insulator transition at a much lower charge density of ∼1.0 × 10 12 cm -2 (T = 25 K). The reduced effective Schottky barrier height in MoS 2 /h-BN is attributed to the decreased effective work function of MoS 2 arisen from h-BN induced n-doping and the reduced effective metal work function due to dipole moments originated from fixed charges in SiO 2 .

Synergetic effect of MoS2 and graphene as cocatalysts for enhanced photocatalytic activity of BiPO4 nanoparticles

Science.gov (United States)

Lv, Hua; Liu, Yumin; Tang, Haibo; Zhang, Peng; Wang, Jianji

2017-12-01

The photodegradation of organic pollutants is an attractive green chemistry technology for water pollution control. Here we prepared a new composite material consisting of BiPO4 nanocrystals grown on layered graphene and MoS2 as a high-performance photocatalyst for the photodegradation of organic pollutants. This composite material was synthesized by a facile one-pot microwave-assisted hydrothermal technique in the presence of layered graphene and MoS2. Through optimizing the loading content of each component, the BiPO4-MoS2/graphene nanocomposite exhibited the highest photocatalytic activity for the degradation of Rhodamine (RhB) when the content of MoS2 and graphene was 2 wt% and 7 wt%, respectively. The enhanced photocatalytic activity of the new composite photocatalyst was attributed to the positive synergetic effect of the layered graphene and MoS2 as cocatalyst, which acted as electron collector and transporter for the interfacial electron transfer from BiPO4 to electron acceptor in the aqueous solution and thus suppressed the charge recombination and made the photogenerated holes more available to participated in the oxidation process. Moreover, the presence of layered MoS2/graphene hybrid could offer more reactive sites and activated the O2 molecular in water to form superoxide radical, thereby resulting in the enhanced photocatalytic activity.

Improving the Electromagnetic Wave Absorption Properties of the Layered MoS2 by Cladding with Ni Nanoparticles

Science.gov (United States)

Zhang, Zilong; Wang, Zilin; Heng, Liuyang; Wang, Shuai; Chen, Xiqiao; Fu, Xiquan; Zou, Yanhong; Tang, Zhixiang

2018-05-01

MoS2 is a promising material with microwave absorption performance due to its high dielectric properties and low density. However, pure MoS2 is non-magnetic and has a bad impedance matching characteristic. In this study we prepared the Ni/MoS2 nanocomposites by cladding the MoS2 micrometer slices with magnetic Ni nanoparticles. Our results show that the microwave absorption properties of Ni/MoS2 nanocomposites have been improved obviously compared with the pure MoS2. Because of the introduction of Ni particles, the permeability of the nanocomposites has been turned from one to a complex, indicating a newly added magnetic loss. Meanwhile, the big gap between the permittivity and permeability of the Ni/MoS2 nanocomposites has been properly narrowed, which suggests an improved impedance matching. Moreover, the dielectric Cole-Cole semicircle shows that there are more Debye relaxation processes for the Ni/MoS2 nanocomposites, which further enhances the dielectric loss. Due to its improved electromagnetic properties, the minimum reflection loss (RL) value of the Ni/MoS2 nanocomposites with 60 wt % loading reaches -55 dB and the absorption bandwidth (<-10 dB) is up to 4.0 GHz (10.8-14.8 GHz) with a matching thickness of 1.5 mm. The results provide an excellent candidate for microwave absorbing materials with a broad effective absorption bandwidth at thin thicknesses.

Efficient spin injection and giant magnetoresistance in Fe / MoS 2 / Fe junctions

KAUST Repository

Dolui, Kapildeb

2014-07-02

We demonstrate giant magnetoresistance in Fe/MoS2/Fe junctions by means of ab initio transport calculations. We show that junctions incorporating either a monolayer or a bilayer of MoS2 are metallic and that Fe acts as an efficient spin injector into MoS2 with an efficiency of about 45%. This is the result of the strong coupling between the Fe and S atoms at the interface. For junctions of greater thickness, a maximum magnetoresistance of ∼300% is obtained, which remains robust with the applied bias as long as transport is in the tunneling limit. A general recipe for improving the magnetoresistance in spin valves incorporating layered transition metal dichalcogenides is proposed. © 2014 American Physical Society.

One-dimensional metallic edge states in MoS2

DEFF Research Database (Denmark)

Bollinger, Mikkel; Lauritsen, J.V.; Jacobsen, Karsten Wedel

2001-01-01

By the use of density functional calculations it is shown that the edges of a two-dimensional slab of insulating MoS2 exhibit several metallic states. These edge states can be viewed as one-dimensional conducting wires, and we show that they can be observed directly using scanning tunneling...

MoS2 quantum dots@TiO2 nanotube composites with enhanced photoexcited charge separation and high-efficiency visible-light driven photocatalysis

Science.gov (United States)

Zhao, Fenfen; Rong, Yuefei; Wan, Junmin; Hu, Zhiwen; Peng, Zhiqin; Wang, Bing

2018-03-01

MoS2 quantum dots (QDs) that are 5 nm in size were deposited on the surface of ultrathin TiO2 nanotubes (TNTs) with 5 nm wall thickness by using an improved hydrothermal method to form a MoS2 QDs@TNT visible-light photocatalyst. The ultrathin TNTs with high percentage of photocatalytic reactive facets were fabricated by the commercially available TiO2 nanoparticles (P25) through an improved hydrothermal method, and the MoS2 QDs were acquired by using a surfactant-assisted technique. The novel MoS2 QDs@TNT photocatalysts showed excellent photocatalytic activity with a decolorization rate of 92% or approximately 3.5 times more than that of pure TNTs for the high initial concentration of methylene blue solution (20 mg l-1) within 40 min under visible-light irradiation. MoS2 as the co-catalysts favored the broadening of TNTs into the visible-light absorption scope. The quantum confinement and edge effects of the MoS2 QDs and the heterojunction formed between the MoS2 QDs and TNTs efficiently extended the lifetime of photoinduced charges, impeded the recombination of photoexcited electron-hole pairs, and improved the visible-light-driven high-efficiency photocatalysis.

Quantum mechanical rippling of a MoS2 monolayer controlled by interlayer bilayer coupling.

Science.gov (United States)

Zheng, Yi; Chen, Jianyi; Ng, M-F; Xu, Hai; Liu, Yan Peng; Li, Ang; O'Shea, Sean J; Dumitrică, T; Loh, Kian Ping

2015-02-13

Nanoscale corrugations are of great importance in determining the physical properties of two-dimensional crystals. However, the mechanical behavior of atomically thin films under strain is not fully understood. In this Letter, we show a layer-dependent mechanical response of molybdenum disulfide (MoS(2)) subject to atomistic-precision strain induced by 2H-bilayer island epitaxy. Dimensional crossover in the mechanical properties is evidenced by the formation of star-shaped nanoripple arrays in the first monolayer, while rippling instability is completely suppressed in the bilayer. Microscopic-level quantum mechanical simulations reveal that the nanoscale rippling is realized by the twisting of neighboring Mo-S bonds without modifying the chemical bond length, and thus invalidates the classical continuum mechanics. The formation of nanoripple arrays significantly changes the electronic and nanotribological properties of monolayer MoS(2). Our results suggest that quantum mechanical behavior is not unique for sp(2) bonding but general for atomic membranes under strain.

Phase transition and field effect topological quantum transistor made of monolayer MoS2

Science.gov (United States)

Simchi, H.; Simchi, M.; Fardmanesh, M.; Peeters, F. M.

2018-06-01

We study topological phase transitions and topological quantum field effect transistor in monolayer molybdenum disulfide (MoS2) using a two-band Hamiltonian model. Without considering the quadratic (q 2) diagonal term in the Hamiltonian, we show that the phase diagram includes quantum anomalous Hall effect, quantum spin Hall effect, and spin quantum anomalous Hall effect regions such that the topological Kirchhoff law is satisfied in the plane. By considering the q 2 diagonal term and including one valley, it is shown that MoS2 has a non-trivial topology, and the valley Chern number is non-zero for each spin. We show that the wave function is (is not) localized at the edges when the q 2 diagonal term is added (deleted) to (from) the spin-valley Dirac mass equation. We calculate the quantum conductance of zigzag MoS2 nanoribbons by using the nonequilibrium Green function method and show how this device works as a field effect topological quantum transistor.

First-principles studies of Te line-ordered alloys in a MoS2 monolayer

Science.gov (United States)

Andriambelaza, N. F.; Mapasha, R. E.; Chetty, N.

2018-04-01

The thermodynamic stability, structural and electronic properties of Te line-ordered alloys are investigated using density functional theory (DFT) methods. Thirty four possible Te line-ordered alloy configurations are found in a 5×5 supercell of a MoS2 monolayer. The calculated formation energies show that the Te line-ordered alloy configurations are thermodynamically stable at 0 K and agree very well with the random alloys. The lowest energy configurations at each concentration correspond to the configuration where the Te atom rows are far apart from each other (avoiding clustering) within the supercell. The variation of the lattice constant at different concentrations obey Vegard's law. The Te line-ordered alloys fine tune the band gap of a MoS2 monolayer although deviating from linearity behavior. Our results suggest that the Te line-ordered alloys can be an effective way to modulate the band gap of a MoS2 monolayer for nanoelectronic, optoelectronic and nanophotonic applications.

Fabrication of multilayered-sandwich MoS2/c architectures with advanced lithium storage properties

International Nuclear Information System (INIS)

Du, Jinlong; Yang, Zhanxu; Wang, Xiaorong; Qi, Chengyuan; Li, Yue; Mao, Wei; Qiao, Haiyan; Yu, ZongBao; Ren, Tieqiang; Qiao, Qingdong

2017-01-01

MoS 2 /C nanocomposite with a multilayered sandwich structure based on few-layered MoS 2 and carbon layers in an alternating sequence, was successfully synthesized through a one-step synchronized carbonization and sulfuration method. The hybrids were characterized by X-ray diffraction, High-resolution transmission electron microscopy, Atomic force microscope, Raman and X-ray photoelectron spectroscopic methods. The as-obtained MoS 2 /C nanocomposite applied as lithium-ion batteries anode materials, showed a high initial discharge and charge capacities of 1678.5 and 1386.0 mAh g −1 , respectively. High specific reversible capacity is maintained at fast C rates, e.g., 1390, 1223, 1017, 566, and 450 mAh g −1 at 0.1C, 0.6C, 3C, 10C and 20C, respectively. The good performance of the composite is mainly attributed to the unique few layered composite architectures, which can improve ion/electron transportation and prevent aggregation and restacking during the lithiation/delithiation process.

Defect Functionalization of MoS2 nanostructures as toxic gas sensors: A review

Science.gov (United States)

Ramanathan, A. A.

2018-02-01

Toxic gas sensing plays an important role in many parts of our life from environmental protection, human health, agriculture to biomedicine. The importance of detecting toxic gases in the environment cannot be minimised in today’s highly polluted world and the reality of global warming. Carbon monoxide and NO gas are highly toxic air pollutants and can cause serious health problems. Therefore, materials able to detect these toxic gases are urgently needed. Doping and defect substitution is a versatile and new tool for changing the chemical and electronic properties of 2D layered materials and boosting the applications of these materials. Molybdenum disulphide (MoS2) as a 2D layered material has unique properties and applications due its semiconducting nature, bandgap and layered structure. In the past decade, although, extensive research of Graphene as a gas sensor was conducted, the zero bandgap limited its potential and applicability. This is overcome in MoS2 nanostructures (MSNs) and the current focus is defect engineering of MSNs. The large surface to volume ratio, bandgap and cheapness makes MSNs very attractive for gas sensor applications. The idea is fuelled by the recent finding of Ding et al [16] of successful doping strategies on monolayer MoS2 for enhanced NO detection. Moreover, the work of Luo et al [17] shows that substitutional doping is the new way of boosting and engineering the properties of ML MoS2. A short and focused report in this exciting field is presented in this review.

Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

International Nuclear Information System (INIS)

Lee, Ching-Sung; Hung, Chun-Tse; Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Ho, Chiu-Sheng; Lai, Ying-Nan

2012-01-01

Al 0.22 Ga 0.78 As/In 0.24 Ga 0.76 As pseudomorphic high-electron-mobility transistors (pHEMTs) with metal-oxide-semiconductor (MOS)-gate structure or oxide passivation by using ozone water oxidation treatment have been comprehensively investigated. Annihilated surface states, enhanced gate insulating property and improved device gain have been achieved by the devised MOS-gate structure and oxide passivation. The present MOS-gated or oxide-passivated pHEMTs have demonstrated superior device performances, including superior breakdown, device gain, noise figure, high-frequency characteristics and power performance. Temperature-dependent device characteristics of the present designs at 300–450 K are also studied. (paper)

Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition

KAUST Repository

Cheng, Yingchun; Yao, Kexin; Yang, Yang; LI, LIANG; Yao, Yingbang; Wang, Qingxiao; Zhang, Xixiang; Han, Yu; Schwingenschlö gl, Udo

2013-01-01

Recently, single layer MoS2 with a direct band gap of 1.9 eV has been proposed as a candidate for two dimensional nanoelectronic devices. However, the synthetic approach to obtain high-quality MoS2 atomic thin layers is still problematic

Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping

KAUST Repository

Lin, Chih-Pin

2015-08-27

We investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.

One-Step Preparation of Large Area Films of Oriented MoS2 Nanoparticles on Multilayer Graphene and Its Electrocatalytic Activity for Hydrogen Evolution

Directory of Open Access Journals (Sweden)

Jinbao He

2018-01-01

Full Text Available MoS2 is a promising material to replace Pt-based catalysts for the hydrogen evolution reaction (HER, due to its excellent stability and high activity. In this work, MoS2 nanoparticles supported on graphitic carbon (about 20 nm with a preferential 002 facet orientation have been prepared by pyrolysis of alginic acid films on quartz containing adsorbed (NH42MoS4 at 900 °C under Ar atmosphere. Although some variation of the electrocatalytic activity has been observed from batch to batch, the MoS2 sample exhibited activity for HER (a potential onset between 0.2 and 0.3 V vs. SCE, depending on the concentrations of (NH42MoS4 precursor used in the preparation process. The loading and particle size of MoS2, which correlate with the amount of exposed active sites in the sample, are the main factors influencing the electrocatalytic activity.

Microwave-induced activation of additional active edge sites on the MoS2 surface for enhanced Hg0 capture

Science.gov (United States)

Zhao, Haitao; Mu, Xueliang; Yang, Gang; Zheng, Chengheng; Sun, Chenggong; Gao, Xiang; Wu, Tao

2017-10-01

In recent years, significant effort has been made in the development of novel materials for the removal of mercury from coal-derived flue gas. In this research, microwave irradiation was adopted to induce the creation of additional active sites on the MoS2 surface. The results showed that Hg0 capture efficiency of the adsorbent containing MoS2 nanosheets being microwave treated was as high as 97%, while the sample prepared via conventional method only showed an efficiency of 94% in its first 180 min testing. After the adsorbent was treated by microwave irradiation for 3 more times, its mercury removal efficiency was still noticeably higher than that of the sample prepared via conventional method. Characterization of surface structure of the MoS2 containing material together with DFT study further revealed that the (001) basal planes of MoS2 crystal structure were cracked into (100) edge planes (with an angle of approximately 75°) under microwave treatment, which subsequently resulted in the formation of additional active edge sites on the MoS2 surface and led to the improved performance on Hg0 capture.

Tuning the Electronic Properties, Effective Mass and Carrier Mobility of MoS2 Monolayer by Strain Engineering: First-Principle Calculations

Science.gov (United States)

Phuc, Huynh V.; Hieu, Nguyen N.; Hoi, Bui D.; Hieu, Nguyen V.; Thu, Tran V.; Hung, Nguyen M.; Ilyasov, Victor V.; Poklonski, Nikolai A.; Nguyen, Chuong V.

2018-01-01

In this paper, we studied the electronic properties, effective masses, and carrier mobility of monolayer MoS_2 using density functional theory calculations. The carrier mobility was considered by means of ab initio calculations using the Boltzmann transport equation coupled with deformation potential theory. The effects of mechanical biaxial strain on the electronic properties, effective mass, and carrier mobility of monolayer MoS_2 were also investigated. It is demonstrated that the electronic properties, such as band structure and density of state, of monolayer MoS_2 are very sensitive to biaxial strain, leading to a direct-indirect transition in semiconductor monolayer MoS_2. Moreover, we found that the carrier mobility and effective mass can be enhanced significantly by biaxial strain and by lowering temperature. The electron mobility increases over 12 times with a biaxial strain of 10%, while the carrier mobility gradually decreases with increasing temperature. These results are very useful for the future nanotechnology, and they make monolayer MoS_2 a promising candidate for application in nanoelectronic and optoelectronic devices.

Tribological Performance of MoS2 Coatings in Various Environments

Directory of Open Access Journals (Sweden)

Thomas Gradt

2016-09-01

Full Text Available Molybdenum disulfide (MoS2 is a well-known solid lubricant for tribosystems running in vacuum or dry gases. Problems arise due to its sensitivity to humidity, which is a drawback for its application under ambient conditions. However, by using a physical vapor deposition (PVD process, deposition parameters can be optimized not only to gain a coatings structure with favorable frictional properties but also to minimize the sensitivity to attack by water molecules. Therefore, an improved tribological behavior even under moist conditions can be achieved. MoS2 coatings are also candidates for being applied at cryogenic temperatures. They already have proven their suitability, e.g., for sliding support elements between superconducting magnets of the nuclear fusion-experiment Wendelstein 7-X. However, these coatings were exclusively produced for this particular application and the utilization for more common tribosystems may be precluded due to cost considerations. In view of a wider range of applications, pure and Cr containing PVD-MoS2 coatings with an optimized structure were tested under varying environments including hydrogen gas and cryogenic temperatures. Results of the most promising variant are presented in this paper.

Electrical parameters of silicon on sapphire; influence on aluminium gate MOS devices performances

International Nuclear Information System (INIS)

Suat, J.P.; Borel, J.

1976-01-01

The question is the quality level of the substrate obtained with MOS technologies on silicon on an insulating substrate. Experimental results are presented on the main electrical parameters of MOS transistors made on silicon on sapphire, e.g. mean values and spreads of: threhold voltage and surface mobilities of transistors, breakdown voltages, and leakage currents of diodes. These devices have been made in three different technologies: enhancement P. channel technology, depletion-enhancement P. channel technology, and complementary MOS technology. These technologies are all aluminium gate processes with standard design rules and 5μm channel length. Measurements show that presently available silicon on sapphire can be considered as a very suitable substrate for many MOS digital applications (but not for dynamic circuits) [fr

The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

Directory of Open Access Journals (Sweden)

Jingyu Shen

2018-01-01

Full Text Available The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS technology under constant voltage stress and substrate hot-carrier injection are investigated. Compared to normal thick gate oxide, the degradation mechanism of time-dependent dielectric breakdown (TDDB of ultra-thin gate oxide is found to be different. It is found that the gate current (Ig of ultra-thin gate oxide MOS capacitor is more likely to be induced not only by Fowler-Nordheim (F-N tunneling electrons, but also by electrons surmounting barrier and penetrating electrons in the condition of constant voltage stress. Moreover it is shown that the time to breakdown (tbd under substrate hot-carrier injection is far less than that under constant voltage stress when the failure criterion is defined as a hard breakdown according to the experimental results. The TDDB mechanism of ultra-thin gate oxide will be detailed. The differences in TDDB characteristics of MOS capacitors induced by constant voltage stress and substrate hot-carrier injection will be also discussed.

Electric-field and strain-tunable electronic properties of MoS2/h-BN/graphene vertical heterostructures.

Science.gov (United States)

Zan, Wenyan; Geng, Wei; Liu, Huanxiang; Yao, Xiaojun

2016-01-28

Vertical heterostructures of MoS2/h-BN/graphene have been successfully fabricated in recent experiments. Using first-principles analysis, we show that the structural and electronic properties of such vertical heterostructures are sensitive to applied vertical electric fields and strain. The applied electric field not only enhances the interlayer coupling but also linearly controls the charge transfer between graphene and MoS2 layers, leading to a tunable doping in graphene and controllable Schottky barrier height. Applied biaxial strain could weaken the interlayer coupling and results in a slight shift of graphene's Dirac point with respect to the Fermi level. It is of practical importance that the tunable electronic properties by strain and electric fields are immune to the presence of sulfur vacancies, the most common defect in MoS2.

Impurities and Electronic Property Variations of Natural MoS 2 Crystal Surfaces

KAUST Repository

Addou, Rafik; McDonnell, Stephen; Barrera, Diego; Guo, Zaibing; Azcatl, Angelica; Wang, Jian; Zhu, Hui; Hinkle, Christopher L.; Quevedo-Lopez, Manuel; Alshareef, Husam N.; Colombo, Luigi; Hsu, Julia W P; Wallace, Robert M.

2015-01-01

Room temperature X-ray photoelectron spectroscopy (XPS), inductively coupled plasma mass spectrometry (ICPMS), high resolution Rutherford backscattering spectrometry (HR-RBS), Kelvin probe method, and scanning tunneling microscopy (STM) are employed to study the properties of a freshly exfoliated surface of geological MoS2 crystals. Our findings reveal that the semiconductor 2H-MoS2 exhibits both n- and p-type behavior, and the work function as measured by the Kelvin probe is found to vary from 4.4 to 5.3 eV. The presence of impurities in parts-per-million (ppm) and a surface defect density of up to 8% of the total area could explain the variation of the Fermi level position. High resolution RBS data also show a large variation in the MoSx composition (1.8 < x < 2.05) at the surface. Thus, the variation in the conductivity, the work function, and stoichiometry across small areas of MoS2 will have to be controlled during crystal growth in order to provide high quality uniform materials for future device fabrication. © 2015 American Chemical Society.

Impurities and Electronic Property Variations of Natural MoS 2 Crystal Surfaces

KAUST Repository

Addou, Rafik

2015-09-22

Room temperature X-ray photoelectron spectroscopy (XPS), inductively coupled plasma mass spectrometry (ICPMS), high resolution Rutherford backscattering spectrometry (HR-RBS), Kelvin probe method, and scanning tunneling microscopy (STM) are employed to study the properties of a freshly exfoliated surface of geological MoS2 crystals. Our findings reveal that the semiconductor 2H-MoS2 exhibits both n- and p-type behavior, and the work function as measured by the Kelvin probe is found to vary from 4.4 to 5.3 eV. The presence of impurities in parts-per-million (ppm) and a surface defect density of up to 8% of the total area could explain the variation of the Fermi level position. High resolution RBS data also show a large variation in the MoSx composition (1.8 < x < 2.05) at the surface. Thus, the variation in the conductivity, the work function, and stoichiometry across small areas of MoS2 will have to be controlled during crystal growth in order to provide high quality uniform materials for future device fabrication. © 2015 American Chemical Society.

MoS2/reduced graphene oxide nanocomposite for sensitive sensing of cysteamine in presence of uric acid in human plasma

International Nuclear Information System (INIS)

Chekin, Fereshteh; Boukherroub, Rabah; Szunerits, Sabine

2017-01-01

A hybrid nanocomposite of MoS 2 nanosheets and reduced graphene oxide (rGO) was fabricated by a facile and effective method. The morphology and structure of the nanocomposite (MoS 2 -rGO) were characterized by scanning electron microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, electrochemical impedance spectroscopy and cyclic voltammetry. The MoS 2 nanosheets were uniformly anchored on the rGO framework with strong adhesion. A glassy carbon electrode modified by drop-casting with MoS 2 -rGO was used for the electrochemical oxidation of cysteamine (CA) in the presence of uric acid (UA). Under optimum conditions, the anodic peak current of CA shows a linear relation with the CA concentration between 0.01 and 20 μM with a detection limit of 7 nM. The proposed electrochemical sensor was used for determination of CA in human plasma. - Highlights: • The hybrid nanocomposite composed of MoS 2 nanosheets and reduced graphene oxide was fabricated by a facile and effective method. • The MoS 2 nanosheets were uniformly anchored on the rGO framework with strong adhesion. • Glassy carbon electrodes modified with MoS 2 -rGO was used for electro-oxidation of cysteamine (CA) in presence of uric acid (UA). • The anodic peak current of CA at the surface of modified electrode is linear to its concentration ranges at 0.01 to 20 μM with a detection limit of 7 nM. • The proposed electrochemical sensor was used for determination of CA in human plasma. • The accuracy of the method was as excellent comparing with the obtained results using reference method.

Passive harmonic mode-locking of Er-doped fiber laser using CVD-grown few-layer MoS2 as a saturable absorber

International Nuclear Information System (INIS)

Xia Han-Ding; Li He-Ping; Lan Chang-Yong; Li Chun; Deng Guang-Lei; Li Jian-Feng; Liu Yong

2015-01-01

Passive harmonic mode locking of an erbium-doped fiber laser based on few-layer molybdenum disulfide (MoS 2 ) saturable absorber (SA) is demonstrated. The few-layer MoS 2 is prepared by the chemical vapor deposition (CVD) method and then transferred onto the end face of a fiber connector to form a fiber-compatible MoS 2 SA. The 20th harmonic mode-locked pulses at 216-MHz repetition rate are stably generated with a pulse duration of 1.42 ps and side-mode suppression ratio (SMSR) of 36.1 dB. The results confirm that few-layer MoS 2 can serve as an effective SA for mode-locked fiber lasers. (paper)

A force-matching Stillinger-Weber potential for MoS2: Parameterization and Fisher information theory based sensitivity analysis

Science.gov (United States)

Wen, Mingjian; Shirodkar, Sharmila N.; Plecháč, Petr; Kaxiras, Efthimios; Elliott, Ryan S.; Tadmor, Ellad B.

2017-12-01

Two-dimensional molybdenum disulfide (MoS2) is a promising material for the next generation of switchable transistors and photodetectors. In order to perform large-scale molecular simulations of the mechanical and thermal behavior of MoS2-based devices, an accurate interatomic potential is required. To this end, we have developed a Stillinger-Weber potential for monolayer MoS2. The potential parameters are optimized to reproduce the geometry (bond lengths and bond angles) of MoS2 in its equilibrium state and to match as closely as possible the forces acting on the atoms along a dynamical trajectory obtained from ab initio molecular dynamics. Verification calculations indicate that the new potential accurately predicts important material properties including the strain dependence of the cohesive energy, the elastic constants, and the linear thermal expansion coefficient. The uncertainty in the potential parameters is determined using a Fisher information theory analysis. It is found that the parameters are fully identified, and none are redundant. In addition, the Fisher information matrix provides uncertainty bounds for predictions of the potential for new properties. As an example, bounds on the average vibrational thickness of a MoS2 monolayer at finite temperature are computed and found to be consistent with the results from a molecular dynamics simulation. The new potential is available through the OpenKIM interatomic potential repository at https://openkim.org/cite/MO_201919462778_000.

Enhancement of near-infrared detectability from InGaZnO thin film transistor with MoS2 light absorbing layer

Science.gov (United States)

Pak, Sang Woo; Chu, Dongil; Song, Da Ye; Kyo Lee, Seung; Kim, Eun Kyu

2017-11-01

We report an enhancement of near-infrared (NIR) detectability from amorphous InGaZnO (α-IGZO) thin film transistor in conjunction with randomly distributed molybdenum disulfide (MoS2) flakes. The electrical characteristics of the α-IGZO grown by radio-frequency magnetron sputtering exhibit high effective mobility exceeding 15 cm2 V-1 s-1 and current on/off ratio up to 107. By taking advantages of the high quality α-IGZO and MoS2 light absorbing layer, photodetection spectra are able to extend from ultra-violet to NIR range. The α-IGZO channel detector capped by MoS2 show a photo-responsivity of approximately 14.9 mA W-1 at 1100 nm wavelength, which is five times higher than of the α-IGZO device without MoS2 layer.

Synthesis of MoS Inorganic Fullerene-like Nanoparticles by a ...

African Journals Online (AJOL)

NICO

B. Gao and X. Zhang,. 6. S. Afr. J. Chem., 2014, 67, 6–11, .... shape to that synthesized at 800 °C, the diameters of the nanoparticles are larger ... Figure 3 XRD patterns of the as-synthesized MoS2 products at different reaction temperatures.

Synthesis and structural determination of twisted MoS2 nanotubes

International Nuclear Information System (INIS)

Santiago, P.; Schabes-Retchkiman, P.; Ascencio, J.A.; Mendoza, D.; Perez-Alvarez, M.; Espinosa, A.; Reza-SanGerman, C.; Camacho-Bragado, G.A.; Jose-Yacaman, M.

2004-01-01

In the present work we report the synthesis of MoS 2 nanotubes with diameters greater than 10 nm using a template method. The length and properties of these nanotubes are a direct result of the preparation method. High-resolution transmission electron microscopy is used to study the structure of these highly curved entities. Molecular dynamics simulations of MoS 2 nanotubes reveal that one of the stable forms of the nanotubes is a twisted one. The twisting of the nanotubes produces a characteristic contrast in the images, which is also studied using simulation methods. The analysis of the local contrast close to the perpendicular orientation shows geometrical arrays of dots in domain-like structures, which are demonstrated to be a product of the atomic overlapping of irregular curvatures in the nanotubes. The configuration of some of the experimentally obtained nanotubes is demonstrated to be twisted with a behavior suggesting partial plasticity. (orig.)

Scanning tunneling spectroscopy of MoS2 monolayer in presence of ethanol gas

Science.gov (United States)

Hosseini, Seyed Ali; Iraji zad, Azam; Berahman, Masoud; Aghakhani Mahyari, Farzaneh; Shokouh, Seyed Hossein Hosseini

2018-04-01

Due to high surface to volume ratio and tunable band gap, two dimensional (2D) layered materials such as MoS2, is good candidate for gas sensing applications. This research mainly focuses on variation of Density of States (DOS) of MoS2 monolayes caused by ethanol adsorption. The nanosheets are synthesized by liquid exfoliation, and then using Scanning Tunneling Spectroscopy (STS) and Density Functional Theory (DFT), local electronic characteristic such as DOS and band gap in non-vacuum condition are analyzed. The results show that ethanol adsorption enhances DOS and deform orbitals near the valence and conduction bands that increase transport of carriers on the sheet.

Spectroscopic Signatures for Interlayer Coupling in MoS2-WSe2 van der Waals Stacking

Science.gov (United States)

2014-09-07

K. Direct Imaging of Band Profile in Single Layer MoS2 on Graphite: Quasiparticle Energy Gap, Metallic Edge States, and Edge Band Bending. Nano Lett...1403.6455v1. 51. Shi, H.; Pan, H.; Zhang, Y.-W.; Yakobson, B. I. Quasiparticle Band Structures and Optical Properties of Strained Mono- layer MoS2 and WS2...Phys. Rev. B 2013, 87, 155304. 52. Liang, Y.; Huang, S.; Soklaski, R.; Yang, L. Quasiparticle Band-edge Energy and Band Offsets of Monolayer of

Self-assembled MoS2–carbon nanostructures: influence of nanostructuring and carbon on lithium battery performance

KAUST Repository

Das, Shyamal K.

2012-01-01

Composites of MoS 2 and amorphous carbon are grown and self-assembled into hierarchical nanostructures via a hydrothermal method. Application of the composites as high-energy electrodes for rechargeable lithium-ion batteries is investigated. The critical roles of nanostructuring of MoS 2 and carbon composition on lithium-ion battery performance are highlighted. © 2012 The Royal Society of Chemistry.

Incorporation of Co into MoS2/graphene nanocomposites: One effective way to enhance the cycling stability of Li/Na storage

Science.gov (United States)

Li, Xiaomin; Feng, Zhenxing; Zai, Jiantao; Ma, Zi-Feng; Qian, Xuefeng

2018-01-01

Layered transition metal dichalcogenides are promising as lithium and/or sodium storage materials for lithium and sodium (Li/Na) ion batteries. However they always exhibit limited rate capability and long-term cycling stability, due to the fact that their 2D structures are easily restacking and agglomeration during cycling process and further result poor electrochemical reversibility. Herein, hierarchical Co1/3Mo2/3S2/graphene nanocomposites without CoSx and MoS2 impurities have been synthesized via one-pot solvothermal process. The incorporation of Co into MoS2 at atomic level can not only give rise to thinner and smaller nanosheets in the nanocomposites than MoS2/graphene nanocomposites, but also significantly decrease the size of in-situ formed MoS2/CoSx nanoparticles during electrochemical conversion process, which can greatly promoting the ion diffusion and suppressing the aggregation of active materials. Furthermore, the conductivity of Co1/3Mo2/3S2/graphene nanocomposites can be enhanced from 0.46 S m-1 (MoS2/graphene) to 1.39 S m-1via changing the semiconducting MoS2 to metallic Co1/3Mo2/3S2. The simultaneously optimized electron conductivity and ions diffusion dynamics of Co1/3Mo2/3S2/graphene nanocomposites can effectively improve the reversibility of electrochemical conversion reactions. A capacity of 940 mAh g-1 and 529 mAh g-1 can be maintained at 3200th cycle (2 A g-1) in lithium-ion batteries and 200th cycle (1 A g-1) in sodium-ion batteries, respectively.

Transparent Large-Area MoS2 Phototransistors with Inkjet-Printed Components on Flexible Platforms.

Science.gov (United States)

Kim, Tae-Young; Ha, Jewook; Cho, Kyungjune; Pak, Jinsu; Seo, Jiseok; Park, Jongjang; Kim, Jae-Keun; Chung, Seungjun; Hong, Yongtaek; Lee, Takhee

2017-10-24

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have gained considerable attention as an emerging semiconductor due to their promising atomically thin film characteristics with good field-effect mobility and a tunable band gap energy. However, their electronic applications have been generally realized with conventional inorganic electrodes and dielectrics implemented using conventional photolithography or transferring processes that are not compatible with large-area and flexible device applications. To facilitate the advantages of 2D TMDCs in practical applications, strategies for realizing flexible and transparent 2D electronics using low-temperature, large-area, and low-cost processes should be developed. Motivated by this challenge, we report fully printed transparent chemical vapor deposition (CVD)-synthesized monolayer molybdenum disulfide (MoS 2 ) phototransistor arrays on flexible polymer substrates. All the electronic components, including dielectric and electrodes, were directly deposited with mechanically tolerable organic materials by inkjet-printing technology onto transferred monolayer MoS 2 , and their annealing temperature of printed MoS 2 phototransistors exhibit excellent transparency and mechanically stable operation.

MoS2-wrapped microfiber-based multi-wavelength soliton fiber laser

Science.gov (United States)

Lu, Feifei

2017-11-01

The single-, dual- and triple-wavelength passively mode-locked erbium-doped fiber lasers are demonstrated with MoS2 and polarization-dependent isolator (PD-ISO). The saturable absorber is fabricated by wrapping an MoS2 around a microfiber. The intracavity PD-ISO acts as a wavelength-tunable filter with a polarization controller (PC) by adjusting the linear birefringence. Single-wavelength mode-locked fiber laser can self-start with suitable pump power. With appropriate PC state, dual- and triple-wavelength operations can be observed when gains at different wavelengths reach a balance. It is noteworthy that dual-wavelength pulses exhibiting peak and dip sidebands, respectively, are demonstrated in the experiment. The proposed simple and multi-wavelength all-fiber conventional soliton lasers could possess potential applications in numerous fields, such as sensors, THz generations and optical communications.

Uniform photoresponse in thermally oxidized Ni and MoS2 heterostructures

International Nuclear Information System (INIS)

Luo, Wei; Peng, Gang; Wang, Fei; Miao, Feng; Zhang, Xue-Ao; Qin, Shiqiao

2017-01-01

Non-uniform photocurrent is usually generated at the overlapped region of the heterostructures, and its potential applications may be hindered by the spatial uniformity issue of the device photoresponse. Here, nearly a uniform photoresponse at the overlapped region of the thermally oxidized Ni and molybdenum disulphide (MoS 2 ) heterostructures is obtained. Further characterizations reveal that several nanometers Ni is rightly under the NiO x layer formed at the surface of the film in the oxidation process. The heterostructures based on layered MoS 2 /NiO x /Ni with highly conductive bottom Ni show a high uniform photoresponse with an external quantum efficiency (EQE) of 1.4% at 532 nm. Moreover, successful integration of multiple devices suggests a great priority for such a structure for highly integrated uniform photodetectors. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Band structure and orbital character of monolayer MoS2 with eleven-band tight-binding model

Science.gov (United States)

Shahriari, Majid; Ghalambor Dezfuli, Abdolmohammad; Sabaeian, Mohammad

2018-02-01

In this paper, based on a tight-binding (TB) model, first we present the calculations of eigenvalues as band structure and then present the eigenvectors as probability amplitude for finding electron in atomic orbitals for monolayer MoS2 in the first Brillouin zone. In these calculations we are considering hopping processes between the nearest-neighbor Mo-S, the next nearest-neighbor in-plan Mo-Mo, and the next nearest-neighbor in-plan and out-of-plan S-S atoms in a three-atom based unit cell of two-dimensional rhombic MoS2. The hopping integrals have been solved in terms of Slater-Koster and crystal field parameters. These parameters are calculated by comparing TB model with the density function theory (DFT) in the high-symmetry k-points (i.e. the K- and Γ-points). In our TB model all the 4d Mo orbitals and the 3p S orbitals are considered and detailed analysis of the orbital character of each energy level at the main high-symmetry points of the Brillouin zone is described. In comparison with DFT calculations, our results of TB model show a very good agreement for bands near the Fermi level. However for other bands which are far from the Fermi level, some discrepancies between our TB model and DFT calculations are observed. Upon the accuracy of Slater-Koster and crystal field parameters, on the contrary of DFT, our model provide enough accuracy to calculate all allowed transitions between energy bands that are very crucial for investigating the linear and nonlinear optical properties of monolayer MoS2.

Nanoporous MoS2 monolayer as a promising membrane for purifying hydrogen and enriching methane

Science.gov (United States)

Zhang, Yadong; Meng, Zhaoshun; Shi, Qi; Gao, Haiqi; Liu, Yuzhen; Wang, Yunhui; Rao, Dewei; Deng, Kaiming; Lu, Ruifeng

2017-09-01

We present a theoretical prediction of a highly efficient membrane for hydrogen purification and natural gas upgrading, i.e. laminar MoS2 material with triangular sulfur-edged nanopores. We calculated from first principles the diffusion barriers of H2 and CO2 across monolayer MoS2 to be, respectively, 0.07 eV and 0.17 eV, which are low enough to warrant their great permeability. The permeance values for H2 and CO2 far exceed the industrially accepted standard. Meanwhile, such a porous MoS2 membrane shows excellent selectivity in terms of H2/CO, H2/N2, H2/CH4, and CO2/CH4 separation (>103, >  103, >  106, and  >  104, respectively) at room temperature. We expect that the findings in this work will expedite theoretical or experimental exploration on gas separation membranes based on transition metal dichalcogenides.

Hydrothermal fabrication of few-layer MoS2 nanosheets within nanopores on TiO2 derived from MIL-125(Ti) for efficient photocatalytic H2 evolution

Science.gov (United States)

Ye, Fei; Li, Houfen; Yu, Hongtao; Chen, Shuo; Quan, Xie

2017-12-01

Protons tend to bond strongly with unsaturated-coordinate S element located at the edge of nano-MoS2 and are consequently reduced to H2. Therefore, increasing the active S atoms quantity will be a feasible approach to enhance hydrogen evolution. Herein we developed a porous TiO2 derived from metal organic frameworks (MOFs) as scaffold to restrict the growth and inhibit the aggregation of MoS2 nanosheets. As a result, the thickness of the prepared MoS2 nanosheets was less than 3 nm (1-4 layers), with more edges and active S atoms being exposed. This few-layer MoS2-porous TiO2 exhibits a H2 evolution rate of 897.5 μmol h-1 g-1, which is nearly twice as much as free-stand MoS2 nanosheets and twenty times more than physical mixture of MoS2 with porous TiO2. The high performance is attributed to that more active edge sites in few-layer MoS2-porous TiO2 are exposed than pure MoS2. This work provides a new method to construct MOFs derived porous structures for controlling MoS2 to expose active sites for HER.

MoS2: a two-dimensional hole-transporting material for high-efficiency, low-cost perovskite solar cells

Science.gov (United States)

Kohnehpoushi, Saman; Nazari, Pariya; Abdollahi Nejand, Bahram; Eskandari, Mehdi

2018-05-01

In this work MoS2 thin film was studied as a potential two-dimensional (2D) hole-transporting material for fabrication of low-cost, durable and efficient perovskite solar cells. The thickness of MoS2 was studied as a potential factor in reaching high power conversion efficiency in perovskite solar cells. The thickness of the perovskite layer and the different metal back contacts gave distinct photovoltaic properties to the designed cells. The results show that a single sheet of MoS2 could considerably improve the power conversion efficacy of the device from 10.41% for a hole transport material (HTM)-free device to 20.43% for a device prepared with a 0.67 nm thick MoS2 layer as a HTM. On the back, Ag and Al collected the carriers more efficiently than Au due to the value of their metal contact work function with the TiO2 conduction band. The present work proposes a new architecture for the fabrication of low-cost, durable and efficient perovskite solar cells made from a low-cost and robust inorganic HTM and electron transport material.

Spin injection and magnetoresistance in MoS2-based tunnel junctions using Fe3Si Heusler alloy electrodes.

Science.gov (United States)

Rotjanapittayakul, Worasak; Pijitrojana, Wanchai; Archer, Thomas; Sanvito, Stefano; Prasongkit, Jariyanee

2018-03-19

Recently magnetic tunnel junctions using two-dimensional MoS 2 as nonmagnetic spacer have been fabricated, although their magnetoresistance has been reported to be quite low. This may be attributed to the use of permalloy electrodes, injecting current with a relatively small spin polarization. Here we evaluate the performance of MoS 2 -based tunnel junctions using Fe 3 Si Heusler alloy electrodes. Density functional theory and the non-equilibrium Green's function method are used to investigate the spin injection efficiency (SIE) and the magnetoresistance (MR) ratio as a function of the MoS 2 thickness. We find a maximum MR of ~300% with a SIE of about 80% for spacers comprising between 3 and 5 MoS 2 monolayers. Most importantly, both the SIE and the MR remain robust at finite bias, namely MR > 100% and SIE > 50% at 0.7 V. Our proposed materials stack thus demonstrates the possibility of developing a new generation of performing magnetic tunnel junctions with layered two-dimensional compounds as spacers.

Porous Hybrid Composites of Few-Layer MoS2 Nanosheets Embedded in a Carbon Matrix with an Excellent Supercapacitor Electrode Performance.

Science.gov (United States)

Ji, Hongmei; Liu, Chao; Wang, Ting; Chen, Jing; Mao, Zhengning; Zhao, Jin; Hou, Wenhua; Yang, Gang

2015-12-22

Porous hierarchical architectures of few-layer MoS2 nanosheets dispersed in carbon matrix are prepared by a microwave-hydrothermal method followed by annealing treatment via using glucose as C source and structure-directing agent and (NH4 )2 MoS4 as both Mo and S sources. It is found that the morphology and size of the secondary building units (SBUs), the size and layer number of MoS2 nanosheets as well as the distribution of MoS2 nanosheets in carbon matrix, can be effectively controlled by simply adjusting the molar ratio of (NH4 )2 MoS4 to glucose, leading to the materials with a low charge-transfer resistance, many electrochemical active sites and a robust structure for an outstanding energy storage performance including a high specific capacitance (589 F g(-1) at 0.5 A g(-1) ), a good rate capability (364 F g(-1) at 20 A g(-1) ), and an excellent cycling stability (retention 104% after 2000 cycles) for application in supercapacitors. The exceptional rate capability endows the electrode with a high energy density of 72.7 Wh kg(-1) and a high power density of 12.0 kW kg(-1) simultaneously. This work presents a facile and scalable approach for synthesizing novel heterostructures of MoS2 -based electrode materials with an enhanced rate capability and cyclability for potential application in supercapacitor. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High Efficient Photo-Fenton Catalyst of α-Fe2O3/MoS2 Hierarchical Nanoheterostructures: Reutilization for Supercapacitors

Science.gov (United States)

Yang, Xijia; Sun, Haiming; Zhang, Lishu; Zhao, Lijun; Lian, Jianshe; Jiang, Qing

2016-08-01

A novel three-dimensional (3D) α-Fe2O3/MoS2 hierarchical nanoheterostructure is effectively synthesized via a facile hydrothermal method. The zero-dimensional (0D) Fe2O3 nanoparticles guide the growth of two-dimensional (2D) MoS2 nanosheets and formed 3D flower-like structures, while MoS2 facilitates the good dispersion of porous Fe2O3 with abundant oxygen vacancies. This charming 3D-structure with perfect match of non-equal dimension exhibits high recyclable photo-Fenton catalytic activity for Methyl orange pollutant and nice specific capacity in reusing as supercapacitor after catalysis. The synergistic effect between Fe2O3 and MoS2, the intermediate nanointerfaces, the 3D porous structures, and the abundant oxygen vacancies both contribute to highly active catalysis, nice electrochemical performance and stable cycling. This strategy is simple, cheap, and feasible for maximizing the value of the materials, as well as eliminating the secondary pollution.

Role of hydrogen in the chemical vapor deposition growth of MoS2 atomic layers

Science.gov (United States)

Li, Xiao; Li, Xinming; Zang, Xiaobei; Zhu, Miao; He, Yijia; Wang, Kunlin; Xie, Dan; Zhu, Hongwei

2015-04-01

Hydrogen plays a crucial role in the chemical vapor deposition (CVD) growth of graphene. Here, we have revealed the roles of hydrogen in the two-step CVD growth of MoS2. Our study demonstrates that hydrogen acts as the following: (i) an inhibitor of the thermal-induced etching effect in the continuous film growth process; and (ii) a promoter of the desulfurization reaction by decreasing the S/Mo atomic ratio and the oxidation reaction of the obtained MoSx (0 desulfurization reaction by decreasing the S/Mo atomic ratio and the oxidation reaction of the obtained MoSx (0 < x < 2) films. A high hydrogen content of more than 100% in argon forms nano-sized circle-like defects and damages the continuity and uniformity of the film. Continuous MoS2 films with a high crystallinity and a nearly perfect S/Mo atomic ratio were finally obtained after sulfurization annealing with a hydrogen content in the range of 20%-80%. This insightful understanding reveals the crucial roles of hydrogen in the CVD growth of MoS2 and paves the way for the controllable synthesis of two-dimensional materials. Electronic supplementary information (ESI) available: Low-magnification optical images; Raman spectra of 0% and 5% H2 samples; AFM characterization; Schematic of the film before and after sulfurization annealing; Schematic illustrations of two typical Raman-active phonon modes (E12g, A1g); Raman (mapping) spectra for 40% and 80% H2 samples before and after sulfurization annealing; PL spectra. See DOI: 10.1039/c5nr00904a

Thiol-modified MoS2 nanosheets as a functional layer for electrical bistable devices

Science.gov (United States)

Li, Guan; Tan, Fenxue; Lv, Bokun; Wu, Mengying; Wang, Ruiqi; Lu, Yue; Li, Xu; Li, Zhiqiang; Teng, Feng

2018-01-01

Molybdenum disulfide nanosheets have been synthesized by one-pot method using 1-ODT as sulfur source and surfactant. The structure, morphology and optical properties of samples were investigated by XRD, FTIR, Abs spectrum and TEM patterns. The XRD pattern indicated that the as-obtained MoS2 belong to hexagonal system. The as-obtained MoS2 nanosheets blending with PVK could be used to fabricate an electrically bistable devices through a simple spin-coating method and the device exhibited an obvious electrical bistability properties. The charge transport mechanism of the device was discussed based on the filamentary switching models.

Sensing behavior of flower-shaped MoS2 nanoflakes: case study with methanol and xylene.

Science.gov (United States)

Barzegar, Maryam; Berahman, Masoud; Iraji Zad, Azam

2018-01-01

Recent research interest in two-dimensional (2D) materials has led to an emerging new group of materials known as transition metal dichalcogenides (TMDs), which have significant electrical, optical, and transport properties. MoS 2 is one of the well-known 2D materials in this group, which is a semiconductor with controllable band gap based on its structure. The hydrothermal process is known as one of the scalable methods to synthesize MoS 2 nanostructures. In this study, the gas sensing properties of flower-shaped MoS 2 nanoflakes, which were prepared from molybdenum trioxide (MoO 3 ) by a facile hydrothermal method, have been studied. Material characterization was performed using X-ray diffraction, Brunauer-Emmett-Teller surface area measurements, elemental analysis using energy dispersive X-ray spectroscopy, and field-emission scanning electron microscopy. The gas sensing characteristics were evaluated under exposure to various concentrations of xylene and methanol vapors. The results reveal higher sensitivity and shorter response times for methanol at temperatures below 200 °C toward 200 to 400 ppm gas concentrations. The sensing mechanisms for both gases are discussed based on simulation results using density functional theory and charge transfer.

Hybridized 1T/2H MoS2 Having Controlled 1T Concentrations and its use in Supercapacitors.

Science.gov (United States)

Thi Xuyen, Nguyen; Ting, Jyh-Ming

2017-12-06

Molybdenum disulfide (MoS 2 ) nanoflowers consisting of hybridized 1T/2H phases have been synthesized by using a microwave-assisted hydrothermal (MTH) method. The concentration of the 1T phase, ranging from 40 % to 73 %, is controlled by simply adjusting the ratio of the Mo and S precursors. By using the hybridized 1T/2H MoS 2 as an electrode material, it was demonstrated that the resulting supercapacitor performance is dominated by the 1T phase concentration. It was found that a supercapacitor with 73 % 1T phase exhibits excellent capacitance of 259 F g -1 and great cyclic stability after 1000 cycles. The formation mechanism of the MHT-synthesized hybridized 1T/2H MoS 2 is also reported. More importantly, the mechanism also explains the observed relationship between the 1T phase concentration and the ratio of the Mo and S precursors. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Influences of Different Components on Agglomeration Behavior of MoS2 During Oxidation Roasting Process in Air

Science.gov (United States)

Wang, Lu; Zhang, Guo-Hua; Wang, Jing-Song; Chou, Kuo-Chih

2016-08-01

An agglomeration of the furnace charge always takes place during the oxidation roasting process of molybdenite concentrate (with the main component of MoS2) in multiple hearth furnaces, which greatly affects the production process and furnace service life. In the present work, a preliminary study about the influence of various components on the agglomeration phenomenon of pure MoS2 have been carried out. The results show that reaction temperature, impurity content, and air flow rate have significant effects on the agglomeration extent. Meanwhile, the impurity type added into the pure MoS2 plays a crucial role. It was found that CaO and MgO have a stronger sulfur-fixing effect and that the desulphurization of the roasted product was uncompleted. It was also concluded that the agglomeration is due to the formation of low-melting-point eutectics, including that between MoO3 and impurities and that between MoO3 and Mo4O11. It is suggested that decreasing the impurities contents, especially K, Cu, Pb, and Fe, is an effective method for reducing the extent of agglomeration.

Hybrid MoS2/h-BN Nanofillers As Synergic Heat Dissipation and Reinforcement Additives in Epoxy Nanocomposites.

Science.gov (United States)

Ribeiro, Hélio; Trigueiro, João Paulo C; Silva, Wellington M; Woellner, Cristiano F; Owuor, Peter S; Cristian Chipara, Alin; Lopes, Magnovaldo C; Tiwary, Chandra S; Pedrotti, Jairo J; Villegas Salvatierra, Rodrigo; Tour, James M; Chopra, Nitin; Odeh, Ihab N; Silva, Glaura G; Ajayan, Pulickel M

2017-09-26

Two-dimensional (2D) nanomaterials as molybdenum disulfide (MoS 2 ), hexagonal boron nitride (h-BN), and their hybrid (MoS 2 /h-BN) were employed as fillers to improve the physical properties of epoxy composites. Nanocomposites were produced in different concentrations and studied in their microstructure, mechanical and thermal properties. The hybrid 2D mixture imparted efficient reinforcement to the epoxy leading to increases of up to 95% in tensile strength, 60% in ultimate strain, and 58% in Young's modulus. Moreover, an enhancement of 203% in thermal conductivity was achieved for the hybrid composite as compared to the pure polymer. The incorporation of MoS 2 /h-BN mixture nanofillers in epoxy resulted in nanocomposites with multifunctional characteristics for applications that require high mechanical and thermal performance.

Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition

KAUST Repository

Cheng, Yingchun

2013-01-01

Recently, single layer MoS2 with a direct band gap of 1.9 eV has been proposed as a candidate for two dimensional nanoelectronic devices. However, the synthetic approach to obtain high-quality MoS2 atomic thin layers is still problematic. Spectroscopic and microscopic results reveal that both single layers and tetrahedral clusters of MoS2 are deposited directly on the SiO2/Si substrate by chemical vapor deposition. The tetrahedral clusters are mixtures of 2H- and 3R-MoS2. By ex situ optical analysis, both the single layers and tetrahedral clusters can be attributed to van der Waals epitaxial growth. Due to the similar layered structures we expect the same growth mechanism for other transition-metal disulfides by chemical vapor deposition. © 2013 The Royal Society of Chemistry.

Improvement of gas-adsorption performances of Ag-functionalized monolayer MoS2 surfaces: A first-principles study

Science.gov (United States)

Song, Jian; Lou, Huan

2018-05-01

Investigations of the adsorptions of representative gases (NO2, NH3, H2S, SO2, CO, and HCHO) on different Ag-functionalized monolayer MoS2 surfaces were performed by first principles methods. The adsorption configurations, adsorption energies, electronic structure properties, and charge transfer were calculated, and the results show that the adsorption activities to gases of monolayer MoS2 are dramatically enhanced by the Ag-modification. The Ag-modified perfect MoS2 (Ag-P) and MoS2 with S-vacancy (Ag-Vs) substrates exhibit a more superior adsorption activity to NO2 than other gases, which is consistent with the experimental reports. The charge transfer processes of different molecules adsorbed on different surfaces exhibit various characteristics, with potential benefits to gas selectivity. For instance, the NO2 and SO2 obtain more electrons from both Ag-P and Ag-Vs substrates but the NH3 and H2S donate more electrons to materials than others. In addition, the CO and HCHO possess totally opposite charge transfer directs on both substrates, respectively. The BS and PDOS calculations show that semiconductor types of gas/Ag-MoS2 systems are more determined by the metal-functionalization of material, and the directs and numbers of charge transfer process between gases and adsorbents can cause the increase or decline of material resistance theoretically, which is helpful to gas detection and distinction. The further analysis indicates suitable co-operation between the gain-lost electron ability of gas and metallicity of featuring metal might adjust the resistivity of complex and contribute to new thought for metal-functionalization. Our works provide new valuable ideas and theoretical foundation for the potential improvement of MoS2-based gas sensor performances, such as sensitivity and selectivity.

Origin of the n -type and p -type conductivity of MoS 2 monolayers on a SiO 2 substrate

KAUST Repository

Dolui, Kapildeb; Rungger, Ivan; Sanvito, Stefano

2013-01-01

Ab initio density functional theory calculations are performed to study the electronic properties of a MoS2 monolayer deposited over a SiO 2 substrate in the presence of interface impurities and defects. When MoS2 is placed on a defect

Determination of band offsets at GaN/single-layer MoS2 heterojunction

KAUST Repository

Tangi, Malleswararao

2016-07-25

We report the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS2/c-sapphire. We confirm that the MoS2 is an SL by measuring the separation and position of room temperature micro-Raman E1 2g and A1 g modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS2 heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS2 and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.

Determination of band offsets at GaN/single-layer MoS2 heterojunction

KAUST Repository

Tangi, Malleswararao; Mishra, Pawan; Ng, Tien Khee; Hedhili, Mohamed N.; Janjua, Bilal; Alias, Mohd Sharizal; Anjum, Dalaver H.; Tseng, Chien-Chih; Shi, Yumeng; Joyce, Hannah J.; Li, Lain-Jong; Ooi, Boon S.

2016-01-01

We report the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS2/c-sapphire. We confirm that the MoS2 is an SL by measuring the separation and position of room temperature micro-Raman E1 2g and A1 g modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS2 heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS2 and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.

Photoluminescence of MoS2 Prepared by Effective Grinding-Assisted Sonication Exfoliation

Directory of Open Access Journals (Sweden)

Jing-Yuan Wu

2014-01-01

Full Text Available Exfoliation of bulk molybdenum disulfide (MoS2 using sonication in appropriate solvent is a promising route to large-scale preparation of few-layered or monolayered crystals. Grinding-assisted sonication exfoliation was used for preparing monolayered MoS2 nanosheets from natural mineral molybdenite. By controlling the sonication time, larger crystallites could be further exfoliated to smaller as well as thinner nanosheets without damaging their structures. The concentration of 1.6 mg mL−1 of final solution could be achieved. Several microscopic techniques like scanning electron microscopy, transmission electron microscopy, and atomic force microscopy were employed to evaluate the exfoliation results. Strong photoluminescence with the peak centered at 440 nm was also observed in the resulting dispersion which included several small lateral-sized (~3 nm nanostructures.

Multifunctional Architectures Constructing of PANI Nanoneedle Arrays on MoS2 Thin Nanosheets for High-Energy Supercapacitors.

Science.gov (United States)

Zhu, Jixin; Sun, Wenping; Yang, Dan; Zhang, Yu; Hoon, Hng Huey; Zhang, Hua; Yan, Qingyu

2015-09-02

Multifunctional MoS2 @PANI (polyaniline) pseudo-supercapacitor electrodes consisting of MoS2 thin nanosheets and PANI nanoarrays are fabricated via a large-scale approach. The superior capacitance retention is retained up to 91% after 4000 cycles and a high energy density of 106 Wh kg(-1) is delivered at a power density of 106 kW kg(-1) . © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electronic properties of in-plane phase engineered 1T'/2H/1T' MoS2

Science.gov (United States)

Thakur, Rajesh; Sharma, Munish; Ahluwalia, P. K.; Sharma, Raman

2018-04-01

We present the first principles studies of semi-infinite phase engineered MoS2 along zigzag direction. The semiconducting (2H) and semi-metallic (1T') phases are known to be stable in thin-film MoS2. We described the electronic and structural properties of the infinite array of 1T'/2H/1T'. It has been found that 1T'phase induced semi-metallic character in 2H phase beyond interface but, only Mo atoms in 2H phase domain contribute to the semi-metallic nature and S atoms towards semiconducting state. 1T'/2H/1T' system can act as a typical n-p-n structure. Also high holes concentration at the interface of Mo layer provides further positive potential barriers.

Ionic Liquid-Assisted Synthesis of Nanoscale (MoS2)x(SnO2)1-x on Reduced Graphene Oxide for the Electrocatalytic Hydrogen Evolution Reaction.

Science.gov (United States)

Ravula, Sudhir; Zhang, Chi; Essner, Jeremy B; Robertson, J David; Lin, Jian; Baker, Gary A

2017-03-08

Layered transition metal dichalcogenides (TMDs) have attracted increased attention due to their enhanced hydrogen evolution reaction (HER) performance. More specifically, ternary TMD nanohybrids, such as MoS 2(1-x) Se 2x or bimetallic sulfides, have arisen as promising electrocatalysts compared to MoS 2 and MoSe 2 due to their electronic, morphologic, and size tunabilities. Herein, we report the successful synthesis of few-layered MoS 2 /rGO, SnS 2 /rGO, and (MoS 2 ) x (SnO 2 ) 1-x /rGO nanohybrids anchored on reduced graphene oxide (rGO) through a facile hydrothermal reaction in the presence of ionic liquids as stabilizing, delayering agents. Spectroscopic and microscopic techniques (electron microscopy, X-ray diffraction, Raman spectroscopy, neutron activation analysis, and UV-vis spectrophotometry) are used to validate the hierarchical properties, phase identity, and the smooth compositional tunability of the (MoS 2 ) x (SnO 2 ) 1-x /rGO nanohybrids. Linear sweep voltammetry measurements reveal that incorporation of Sn into the ternary nanohybrids (as a discrete SnO 2 phase) greatly reduces the overpotential by 90-130 mV relative to the MoS 2 electrocatalyst. Significantly, the (MoS 2 ) 0.6 (SnO 2 ) 0.4 /rGO nanohybrid displays superior catalytic performance over MoS 2 alone, exhibiting a low overpotential (η 10 ) of 263 ± 5 mV and a small Tafel slope of 50.8 mV dec -1 . The hybrid catalyst shows high stability for the HER in acidic solutions, with negligible activity loss after 1000 cycles. The hierarchical structures and large surface areas possessing exposed, active edge sites make few-layered (MoS 2 ) x (SnO 2 ) 1-x /rGO nanohybrids promising nonprecious metal electrocatalysts for the HER.

MoS2 monolayer catalyst doped with isolated Co atoms for the hydrodeoxygenation reaction

Science.gov (United States)

Liu, Guoliang; Robertson, Alex W.; Li, Molly Meng-Jung; Kuo, Winson C. H.; Darby, Matthew T.; Muhieddine, Mohamad H.; Lin, Yung-Chang; Suenaga, Kazu; Stamatakis, Michail; Warner, Jamie H.; Tsang, Shik Chi Edman

2017-08-01

The conversion of oxygen-rich biomass into hydrocarbon fuels requires efficient hydrodeoxygenation catalysts during the upgrading process. However, traditionally prepared CoMoS2 catalysts, although efficient for hydrodesulfurization, are not appropriate due to their poor activity, sulfur loss and rapid deactivation at elevated temperature. Here, we report the synthesis of MoS2 monolayer sheets decorated with isolated Co atoms that bond covalently to sulfur vacancies on the basal planes that, when compared with conventionally prepared samples, exhibit superior activity, selectivity and stability for the hydrodeoxygenation of 4-methylphenol to toluene. This higher activity allows the reaction temperature to be reduced from the typically used 300 °C to 180 °C and thus allows the catalysis to proceed without sulfur loss and deactivation. Experimental analysis and density functional theory calculations reveal a large number of sites at the interface between the Co and Mo atoms on the MoS2 basal surface and we ascribe the higher activity to the presence of sulfur vacancies that are created local to the observed Co-S-Mo interfacial sites.

Electrochemiluminescent graphene quantum dots enhanced by MoS2 as sensing platform: a novel molecularly imprinted electrochemiluminescence sensor for 2-methyl-4-chlorophenoxyacetic acid assay

International Nuclear Information System (INIS)

Yang, Yukun; Fang, Guozhen; Wang, Xiaomin; Zhang, Fuyuan; Liu, Jingmin; Zheng, Wenjie; Wang, Shuo

2017-01-01

Highlights: • Electrochemiluminescent MoS 2 -GQDs nanocomposite was fabricated for the first time. • MoS 2 -GQDs hybrid nanocomposite was used as ECL sensing platform. • Molecularly imprinted ECL sensor was fabricated for the determination of MCPA. • MoS 2 -GQDs nanocomposite may advance the developments of ECL sensor. - Abstract: The ECL properties and application of a novel luminescent material molybdenum disulfide-graphene quantum dots (MoS 2 -GQDs) hybrid nanocomposite was reported for the first time. The hybridization of MoS 2 and GQDs endowed nanocomposite with structural and compositional advantages for boosting the ECL performance of GQDs. Impressively, the ECL could be remarkable enhanced using MoS 2 -GQDs hybrid nanocomposite, which was ∼13, ∼185 and ∼596-folds larger than the ECL intensity of GQDs, MoS 2 modified electrodes and bare electrode, respectively. Subsequently, as a sensing platform, the MoS 2 -GQDs hybrid nanocomposite was applied to fabricate molecularly imprinted electrochemiluminescence sensor for the ultrasensitive and selective determination of 2-methyl-4-chlorophenoxyacetic acid. Under optimal conditions, the detection limit of the prepared sensor was 5.5 pmol L −1 (S/N = 3) within a linear concentration range of 10 pmol L −1 –0.1 μmol L −1 . The developped sensor exhibited high sensitivity, good selectivity, reproducibility and stability, suggesting the potential for detecting pesticides and veterinary drugs at trace levels in food safety and environmental control.

Scalable Patterning of MoS2Nanoribbons by Micromolding in Capillaries

KAUST Repository

Hung, Yu-Han; Lu, Ang-Yu; Chang, Yung-Huang; Huang, Jing-Kai; Chang, Jeng-Kuei; Li, Lain-Jong; Su, Ching-Yuan

2016-01-01

, such as SiO2/Si, sapphire, Au film, FTO/glass, and graphene-coated glass. The degree of crystallinity of the as-prepared MoS2 was discovered to be adjustable by varying the temperature through postannealing. The high-temperature thermolysis (1000 °C) results

Vertical heterostructures of MoS2 and graphene nanoribbons grown by two-step chemical vapor deposition for high-gain photodetectors.

Science.gov (United States)

Yunus, Rozan Mohamad; Endo, Hiroko; Tsuji, Masaharu; Ago, Hiroki

2015-10-14

Heterostructures of two-dimensional (2D) layered materials have attracted growing interest due to their unique properties and possible applications in electronics, photonics, and energy. Reduction of the dimensionality from 2D to one-dimensional (1D), such as graphene nanoribbons (GNRs), is also interesting due to the electron confinement effect and unique edge effects. Here, we demonstrate a bottom-up approach to grow vertical heterostructures of MoS2 and GNRs by a two-step chemical vapor deposition (CVD) method. Single-layer GNRs were first grown by ambient pressure CVD on an epitaxial Cu(100) film, followed by the second CVD process to grow MoS2 over the GNRs. The MoS2 layer was found to grow preferentially on the GNR surface, while the coverage could be further tuned by adjusting the growth conditions. The MoS2/GNR nanostructures show clear photosensitivity to visible light with an optical response much higher than that of a 2D MoS2/graphene heterostructure. The ability to grow a novel 1D heterostructure of layered materials by a bottom-up CVD approach will open up a new avenue to expand the dimensionality of the material synthesis and applications.

Novel "203" type of heterostructured MoS2-Fe3O4-C ternary nanohybrid: Synthesis, and enhanced microwave absorption properties

Science.gov (United States)

Yang, Erqi; Qi, Xiaosi; Xie, Ren; Bai, Zhongchen; Jiang, Yang; Qin, Shuijie; Zhong, Wei; Du, Youwei

2018-06-01

It is widely recognized that constructing multiple interface structures to enhance interface polarization is very good for the attenuation of electromagnetic (EM) wave. Here, a novel "203" type of heterostructured nanohybrid consisting of two-dimensional (2D) MoS2 nanosheets, zero-dimensional (0D) Fe3O4 nanoparticles and three-dimensional (3D) carbon layers was elaborately designed and successfully synthesized by a two-step method: Fe3O4 nanoparticles were deposited onto the surface of few-layer MoS2 nanosheets by a hydrothermal method, followed by the carbonation process by a chemical vapor deposition method. Compared to that of "20" type MoS2-Fe3O4, the as-prepared heterostructured "203" type MoS2-Fe3O4-C ternary nanohybrid exhibited remarkably enhanced EM and microwave absorption properties. And the minimum reflection loss (RL) value of the obtained MoS2-Fe3O4-C ternary nanohybrid could reach -53.03 dB at 14.4 GHz with a matching thickness of 7.86 mm. Moreover, the excellent EM wave absorption property of the as-prepared ternary nanohybrid was proved to be attributed to the quarter-wavelength matching model. Therefore, a simple and effective route was proposed to produce MoS2-based mixed-dimensional van der Waals heterostructure, which provided a new platform for the designing and production of high performance microwave absorption materials.

Development and characterization of vertical double-gate MOS field-effect transistors

International Nuclear Information System (INIS)

Trellenkamp, S.

2004-07-01

Planar MOS-field-effect transistors are common devices today used by the computer industry. When their miniaturization reaches its limit, alternate transistor concepts become necessary. In this thesis the development of vertical Double-Gate-MOS-field-effect transistors is presented. These types of transistors have a vertically aligned p-n-p junction (or n-p-n junction, respectively). Consequently, the source-drain current flows perpendicular with respect to the surface of the wafer. A Double-Gate-field-effect transistor is characterized by a very thin channel region framed by two parallel gates. Due to the symmetry of the structure and less bulk volume better gate control and hence better short channel behavior is expected, as well as an improved scaling potential. Nanostructuring of the transistor's active region is very challenging. Approximately 300 nm high and down to 30 nm wide silicon ridges are requisite. They can be realized using hydrogen silsesquioxane (HSQ) as inorganic high resolution resist for electron beam lithography. Structures defined in HSQ are then transferred with high anisotropy and selectivity into silicon using ICP-RIE (reactive ion etching with inductive coupled plasma). 25 nm wide and 330 nm high silicon ridges are achieved. Different transistor layouts are realized. The channel length is defined by epitaxial growth of doped silicon layers before or by ion implantation after nanostructuring, respectively. The transistors show source-drain currents up to 380 μA/μm and transconductances up to 480 μS/μm. Improved short channel behavior for decreasing width of the silicon ridges is demonstrated. (orig.)

One-pot synthesis of nitrogen and sulfur co-doped graphene supported MoS2 as high performance anode materials for lithium-ion batteries

International Nuclear Information System (INIS)

Liu, Qiuhong; Wu, Zhenjun; Ma, Zhaoling; Dou, Shuo; Wu, Jianghong; Tao, Li; Wang, Xin; Ouyang, Canbing; Shen, Anli; Wang, Shuangyin

2015-01-01

Highlights: • Nitrogen and sulfur co-doped graphene supported MoS 2 nanosheets were successfully prepared and used as anode materials for Li-ion batteries. • The as-prepared anode materials show excellent stability in Li-ion batteries. • The materials show high reversible capacity for lithium ion batteries. - Abstract: Nitrogen and sulfur co-doped graphene supported MoS 2 (MoS 2 /NS-G) nanosheets were prepared through a one-pot thermal annealing method. The as prepared samples were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Raman spectra and electrochemical techniques. The MoS 2 /NS-G shows high reversible capacity about 1200 mAh/g at current density of 150 mA/g and excellent stability in Li-ion batteries. It was demonstrated the co-doping of graphene by N and S could significantly enhance the durability of MoS 2 as anode materials for Li-ion batteries

Microstructure and wear characterization of self-lubricating Al2O3 - MoS2 composite ceramic coatings

International Nuclear Information System (INIS)

Koshkarian, K.A.; Kriven, W.M.

1989-01-01

The authors report the results of composite ceramic coatings of alumina Al 2 O 3 containing some molybdenum disulfide MoS 2 electro-codeposited on to Al metal substrates by a combination of anodic sparks deposition of Al 2 O 3 and electrophoresis of MoS 2 . The microstructures were characterized by XRD, XPS, SEM, EDS, SNMS, TEM, SAD and relative wear resistance measurements. The coatings consisted mostly of Al 2 O 3 with some and present as well. The coatings were porous and microcracked. SEM showed them to consist of circular splats which had rapidly crystallized from the molten state in areas of dielectric breakdown in the coating. In the TEM the microstructure was seen to contain sets of parallel, elongated grains having a single crystallographic orientation. The grains were separated by dislocated, low angle grain boundaries or microcracks. The sets intersected at irregularly curved interfaces and were mechanically interlocked. Quantitative SNMS indicated that up to 26 wt% MoS 2 was incorporated in coatings fabricated from 5g/1 solutions. SEM/EDS as well as TEM/SAD/EDS identified 1-3 μ particles of MoS 2 incorporated into the 5g/1 solution derived coatings. These coatings exhibited 50% lower wear rate than pure alumina coatings deposited under the same condition

Edge Epitaxy of Two-dimensional MoSe2 and MoS2 Nanosheets on One-dimensional Nanowires

KAUST Repository

Chen, Junze

2017-06-05

Rational design and synthesis of heterostructures based on transition metal dichalcogenides (TMDs) have attracted increasing interests because of their promising applications in electronics, catalysis, etc. However, the construction of epitaxial heterostructures with interface at the edges of TMD nanosheets (NSs) still remains great challenge. Here, we report a strategy for controlled synthesis of a new type of heterostructures in which TMD NSs, including MoS2 and MoSe2, vertically grow along the longitudinal direction of one-dimensional (1D) Cu2-xS nanowires (NWs) in an epitaxial manner. The obtained Cu2-xS-TMD heterostructures with tunable loading amount and lateral size of TMD NSs are achieved by the consecutive growth of TMD NSs on Cu2-xS NWs through the gradually injection of chalcogen precursors. After cation exchange of Cu in Cu2-xS-TMD heterostructures with Cd, the obtained CdS-MoS2 heterostructures remained their original architectures. Compared to the pure CdS NWs, the CdS-MoS2 heterostructures with 7.7 wt% loading of MoS2 NSs exhibit the best performance in the photocatalytic hydrogen evolution reaction with the H2 production rate up to 4,647 μmol·h-1·g-1, about 58 times that catalyzed with pure CdS NWs. Our synthetic strategy opens up a new way for the controlled synthesis of TMD-based heterostructures which could have various promising applications.

UHV-STM manipulation of single flat gold nano-islands for constructing interconnection nanopads on MoS2

International Nuclear Information System (INIS)

Yang, JianShu; Jie, Deng; Chandrasekhar, N; Joachim, C

2007-01-01

We demonstrate manipulation of metallic islands containing nearly a million atoms with a precision of one lattice spacing on a MoS 2 surface, one at a time. Optimizing the growth conditions yields triangular shape metallic nano-islands 40 nm in lateral size and 12 nm in height on the MoS2 surface. The manipulation of these nano-islands is done one at a time using the scanning tunneling microscope, and a fully planar 4 pad nanostructure is demonstrated, where one apex of each triangular nano-island is pointing towards a central working MoS 2 area of 12 nm x 24 nm in which atomic cleanliness is preserved. The feedback loop conditions to achieve this manipulation are discussed. This fully planar 4 pads nano-structure is ready to be interconnected by a multi-tip system

Broadband and high absorption in Fibonacci photonic crystal including MoS2 monolayer in the visible range

Science.gov (United States)

Ansari, Narges; Mohebbi, Ensiyeh

2018-03-01

2D molybdenum disulfide MoS2, has represented potential applications in optoelectronic devices based on their promising optical absorption responses. However, for practical applications, absorption should increase furthermore in a wide wavelength window. In this paper, we design Fibonacci photonic crystals (PCs) based on Si, SiO2 and MoS2 monolayer and we calculate their absorption responses based on the transfer matrix method. The optical refractive index of the MoS2 monolayer was determined based on the Lorentz-Drude-Gauss model. Effects of Fibonacci order, periodicity, incident light angle and polarization are included in our calculations. Finally, an absorption as large as 90% in a wide optical wavelength range is achieved for both polarizations and incident angle down to 60°. Our results are useful for designing photonic devices with high absorption efficiency.

Dynamical observations on the crack tip zone and stress corrosion of two-dimensional MoS2

KAUST Repository

Ly, Thuc Hue

2017-01-18

Whether and how fracture mechanics needs to be modified for small length scales and in systems of reduced dimensionality remains an open debate. Here, employing in situ transmission electron microscopy, atomic structures and dislocation dynamics in the crack tip zone of a propagating crack in two-dimensional (2D) monolayer MoS2 membrane are observed, and atom-to-atom displacement mapping is obtained. The electron beam is used to initiate the crack; during in situ observation of crack propagation the electron beam effect is minimized. The observed high-frequency emission of dislocations is beyond previous understanding of the fracture of brittle MoS2. Strain analysis reveals dislocation emission to be closely associated with the crack propagation path in nanoscale. The critical crack tip plastic zone size of nearly perfect 2D MoS2 is between 2 and 5 nm, although it can grow to 10 nm under corrosive conditions such as ultraviolet light exposure, showing enhanced dislocation activity via defect generation.

Molten salt-mediated formation of g-C3N4-MoS2 for visible-light-driven photocatalytic hydrogen evolution

Science.gov (United States)

Li, Ni; Zhou, Jing; Sheng, Ziqiong; Xiao, Wei

2018-02-01

Construction of two-dimensional/two-dimensional (2D/2D) hybrid with well-defined composition and microstructure is a general protocol to achieve high-performance catalysts. We herein report preparation of g-C3N4-MoS2 hybrid by pyrolysis of affordable melamine and (NH4)2MoS4 in molten LiCl-NaCl-KCl at 550 °C. Molten salts are confirmed as ideal reaction media for formation of homogeneous hybrid. Characterizations suggest a strong interaction between g-C3N4 and MoS2 in the hybrid, which results in an enhanced visible-light-driven photocatalytic hydrogen generation of the hybrid with an optimal g-C3N4/MoS2 ratio. The present study highlights the merits of molten salt methods on preparation of 2D photocatalysts and provides a rational design of 2D/2D hybrid catalysts for advanced environmental and energy applications.

Few-Layer MoS2-Organic Thin-Film Hybrid Complementary Inverter Pixel Fabricated on a Glass Substrate.

Science.gov (United States)

Lee, Hee Sung; Shin, Jae Min; Jeon, Pyo Jin; Lee, Junyeong; Kim, Jin Sung; Hwang, Hyun Chul; Park, Eunyoung; Yoon, Woojin; Ju, Sang-Yong; Im, Seongil

2015-05-13

Few-layer MoS2-organic thin-film hybrid complementary inverters demonstrate a great deal of device performance with a decent voltage gain of ≈12, a few hundred pW power consumption, and 480 Hz switching speed. As fabricated on glass, this hybrid CMOS inverter operates as a light-detecting pixel as well, using a thin MoS2 channel. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Industrial grade 2D molybdenum disulphide (MoS2): an in vitro exploration of the impact on cellular uptake, cytotoxicity, and inflammation

Science.gov (United States)

Moore, Caroline; Movia, Dania; Smith, Ronan J.; Hanlon, Damien; Lebre, Filipa; Lavelle, Ed C.; Byrne, Hugh J.; Coleman, Jonathan N.; Volkov, Yuri; McIntyre, Jennifer

2017-06-01

The recent surge in graphene research, since its liquid phase monolayer isolation and characterization in 2004, has led to advancements which are accelerating the exploration of alternative 2D materials such as molybdenum disulphide (MoS2), whose unique physico-chemical properties can be exploited in applications ranging from cutting edge electronic devices to nanomedicine. However, to assess any potential impact on human health and the environment, the need to understand the bio-interaction of MoS2 at a cellular and sub-cellular level is critical. Notably, it is important to assess such potential impacts of materials which are produced by large scale production techniques, rather than research grade materials. The aim of this study was to explore cytotoxicity, cellular uptake and inflammatory responses in established cell-lines that mimic different potential exposure routes (inhalation, A549; ingestion, AGS; monocyte, THP-1) following incubation with MoS2 flakes of varying sizes (50 nm, 117 nm and 177 nm), produced by liquid phase exfoliation. Using high content screening (HCS) and Live/Dead assays, it was established that 1 µg ml-1 (for the three different MoS2 sizes) did not induce toxic effects on any of the cell-lines. Confocal microscopy images revealed a normal cellular morphology in all cases. Transmission electron microscopy (TEM) confirmed the uptake of all MoS2 nanomaterials in all the cell-lines, the MoS2 ultimately locating in single membrane vesicles. At such sub-lethal doses, inflammatory responses are observed, however, associated, at least partially, with the presence of lipopolysaccharide endotoxin in nanomaterial suspensions and surfactant samples. Therefore, the inflammatory response of the cells to the MoS2 or endotoxin contamination was interrogated using a 10-plex ELISA which illustrates cytokine production. The experiments carried out using wild-type and endotoxin hyporesponsive bone marrow derived dendritic cells confirmed that the

Normal and grazing incidence pulsed laser deposition of nanostructured MoSx hydrogen evolution catalysts from a MoS2 target

Science.gov (United States)

Fominski, V. Yu.; Romanov, R. I.; Fominski, D. V.; Dzhumaev, P. S.; Troyan, I. A.

2018-06-01

Pulsed laser ablation of a MoS2 target causes enhanced splashing of the material. So, for MoSx films obtained by pulsed laser deposition (PLD) in the conventional normal incidence (NI) configuration, their typical morphology is characterized by an underlying granular structure with an overlayer of widely dispersed spherical Mo and MoSx particles possessing micro-, sub-micro- and nanometer sizes. We investigated the possibility of using high surface roughness, which occurs due to particle deposition, as a support with a large exposed surface area for thin MoSx catalytic layers for the hydrogen evolution reaction (HER). For comparison, the HER performance of MoSx layers formed by grazing incidence (GI) PLD was studied. During GI-PLD, a substrate was placed along the direction of laser plume transport and few large particles loaded the substrate. The local structure and composition of thin MoSx layers formed by the deposition of the vapor component of the laser plume were varied by changing the pressure of the buffer gas (argon, Ar). In the case of NI-PLD, an increase in Ar pressure caused the formation of quasi-amorphous MoSx (x ≥ 2) films that possessed highly active catalytic sites on the edges of the layered MoS2 nanophase. At the same time, a decrease in the deposition rate of the MoSx film appeared due to the scattering of the vapor flux by Ar molecules during flux transport from the target to the substrate. This effect prevented uniform deposition of the MoSx catalytic film on the surface of most particles, whose deposition rate was independent of Ar pressure. The scattered vapor flux containing Mo and S atoms was a dominant source for MoSx film growth during GI-PLD. The thickness and composition distribution of the MoSx film on the substrate depended on both the pressure of the buffer gas and the distance from the target. For 1.0-2.5 cm from the target, the deposition rate was quite sufficient to form S-enriched quasi-amorphous MoSx (2.5 < x < 6) catalytic

Impact of N-plasma and Ga-irradiation on MoS2 layer in molecular beam epitaxy

Science.gov (United States)

Mishra, Pawan; Tangi, Malleswararao; Ng, Tien Khee; Hedhili, Mohamed Nejib; Anjum, Dalaver H.; Alias, Mohd Sharizal; Tseng, Chien-Chih; Li, Lain-Jong; Ooi, Boon S.

2017-01-01

Recent interest in two-dimensional materials has resulted in ultra-thin devices based on the transfer of transition metal dichalcogenides (TMDs) onto other TMDs or III-nitride materials. In this investigation, we realized p-type monolayer (ML) MoS2, and intrinsic GaN/p-type MoS2 heterojunction by the GaN overgrowth on ML-MoS2/c-sapphire using the plasma-assisted molecular beam epitaxy. A systematic nitrogen plasma ( N2 * ) and gallium (Ga) irradiation studies are employed to understand the individual effect on the doping levels of ML-MoS2, which is evaluated by micro-Raman and high-resolution X-Ray photoelectron spectroscopy (HRXPS) measurements. With both methods, p-type doping was attained and was verified by softening and strengthening of characteristics phonon modes E2 g 1 and A 1 g from Raman spectroscopy. With adequate N2 * -irradiation (3 min), respective shift of 1.79 cm-1 for A 1 g and 1.11 cm-1 for E2 g 1 are obtained while short term Ga-irradiated (30 s) exhibits the shift of 1.51 cm-1 for A 1 g and 0.93 cm-1 for E2 g 1 . Moreover, in HRXPS valence band spectra analysis, the position of valence band maximum measured with respect to the Fermi level is determined to evaluate the type of doping levels in ML-MoS2. The observed values of valance band maximum are reduced to 0.5, and 0.2 eV from the intrinsic value of ≈1.0 eV for N2 * - and Ga-irradiated MoS2 layers, which confirms the p-type doping of ML-MoS2. Further p-type doping is verified by Hall effect measurements. Thus, by GaN overgrowth, we attained the building block of intrinsic GaN/p-type MoS2 heterojunction. Through this work, we have provided the platform for the realization of dissimilar heterostructure via monolithic approach.

Anomalous lattice vibrations of monolayer MoS 2 probed by ultraviolet Raman scattering

KAUST Repository

Liu, Hsiang Lin; Guo, Huaihong; Yang, Teng; Zhang, Zhidong; Kumamoto, Yasuaki; Shen, Chih Chiang; Hsu, Yu Te; Li, Lain-Jong; Saito, Riichiro; Kawata, Satoshi

2015-01-01

We present a comprehensive Raman scattering study of monolayer MoS2 with increasing laser excitation energies ranging from the near-infrared to the deep-ultraviolet. The Raman scattering intensities from the second-order phonon modes are revealed to be enhanced anomalously by only the ultraviolet excitation wavelength 354 nm. We demonstrate theoretically that such resonant behavior arises from a strong optical absorption that forms near the Γ point and of the band structure and an inter-valley resonant electronic scattering by the M-point phonons. These results advance our understanding of the double resonance Raman scattering process in low-dimensional semiconducting nanomaterials and provide a foundation for the technological development of monolayer MoS2 in the ultraviolet frequency range. © the Owner Societies 2015.

Solid lubricant behavior of MoS2 and WSe2-based nanocomposite coatings

Science.gov (United States)

Domínguez-Meister, Santiago; Rojas, Teresa Cristina; Brizuela, Marta; Sánchez-López, Juan Carlos

2017-12-01

Tribological coatings made of MoS2 and WSe2 phases and their corresponding combinations with tungsten carbide (WC) were prepared by non-reactive magnetron sputtering of individual targets of similar composition. A comparative tribological analysis of these multiphase coatings was done in both ambient air (30-40% relative humidity, RH) and dry nitrogen (RHgoverns the tribological behavior for each type of environment. This allowed conclusions to be made about the influence of the coating microstructure and composition on the tribological response. The best performance obtained with a WSex film (specific wear rate of 2 × 10-8 mm3 N-1m-1 and a friction coefficient of 0.03-0.05) was compared with that of the well-established MoS2 lubricant material.

Sulfur bonding in MoS2 and Co-Mo-S structures

DEFF Research Database (Denmark)

Byskov, Line Sjolte; Hammer, Bjørk; Nørskov, Jens Kehlet

1997-01-01

The structure and bonding in small MoS2 structures with and without Co is studied theoretically using self-consistent density functional theory with a non-local exchange-correlation energy. The structures model the catalysts used extensively in hydrotreating. We study in detail the structure...... study the energy required to form sulfur vacancies, which are believed to be the active sites for many hydrotreating reactions. The presence of Co atoms at the edges is shown to lead to a significant lowering of the metal-sulfur binding energy. This imposes an increase in the concentration of active...

Soft-type trap-induced degradation of MoS2 field effect transistors

Science.gov (United States)

Cho, Young-Hoon; Ryu, Min-Yeul; Lee, Kook Jin; Park, So Jeong; Choi, Jun Hee; Lee, Byung-Chul; Kim, Wungyeon; Kim, Gyu-Tae

2018-06-01

The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation–correlated mobility fluctuation (CNF–CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF–CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS2 FETs.

Highly sensitive aptasensor based on synergetic catalysis activity of MoS2-Au-HE composite using cDNA-Au-GOD for signal amplification.

Science.gov (United States)

Song, Hai-Yan; Kang, Tian-Fang; Lu, Li-Ping; Cheng, Shui-Yuan

2017-03-01

Single or few-layer nanosheets of MoS 2 (MoS 2 nanosheets) and a composite composed of MoS 2 nanosheets, Au nanoparticles (AuNPs) and hemin (HE) (denoted as MoS 2 -Au-HE) were prepared. The composites possessed high synergetic catalysis activity towards the electroreduction of hydrogen peroxide. Furthermore, glucose oxidase (GOD) and AuNPs were used as marker of the complementary DNA (cDNA) strand of kanamycin aptamer to prepare a conjugate (reffered as cDNA-Au-GOD) that was designed as the signal probe. Both cDNA-Au-GOD and MoS 2 -Au-HE were applied to fabricate aptasensor for kanamycin. MoS 2 -Au-HE acted as solid platform for kanamycin aptamer and signal transmitters. AuNPs were employed as the supporter of cDNA and GOD which catalyze dissolved oxygen to produce hydrogen peroxide in the presence of glucose. Then cathodic peak current of H 2 O 2 was recorded by differential pulse voltammetry (DPV). The electrochemical reduction of H 2 O 2 was catalyzed by MoS 2 -Au-HE that was modified onto the surface of a glassy carbon electrode (GCE). The cathodic peak current of H 2 O 2 was highly linearly decreased with an increase of kanamycin concentrations from 1.0ng/L to 1.0×10 5 ng/L, with a detection limit of 0.8ng/L. This aptasensor can be used to detect kanamycin in milk with high specificity, sensitivity and selectivity. Copyright © 2016 Elsevier B.V. All rights reserved.

Strain tunable magnetic properties of 3d transition-metal ion doped monolayer MoS2: A first-principles study

Science.gov (United States)

Zhu, Yupeng; Liang, Xiao; Qin, Jun; Deng, Longjiang; Bi, Lei

2018-05-01

In this article, a systematic study on the magnetic properties and strain tunability of 3d transition metal ions (Mn, Fe, Co, Ni) doped MoS2 using first-principles calculations is performed. Antiferromagnetic coupling is observed between Mn, Fe ions and the nearest neighbor Mo ions; whereas ferromagnetic coupling is observed in Co and Ni systems. It is also shown that by applying biaxial tensile strain, a significant change of the magnetic moment is observed in all transition metal doped MoS2 materials with a strain threshold. The changes of total magnetic moment have different mechanisms for different doping systems including an abrupt change of the bond lengths, charge transfer and strain induced structural anisotropy. These results demonstrate applying strain as a promising method for tuning the magnetic properties in transition metal ion doped monolayer MoS2.

MoS2 embedded TiO2 nanoparticles for concurrent role of adsorption and photocatalysis

Science.gov (United States)

Pal, Arnab; Jana, Tushar K.; Chatterjee, Kuntal

2018-04-01

In this work, MoS2 embedded TiO2 nanoparticles, synthesized through hydrothermal process, was successfully employed to remove organic pollutant dye like methylene blue(MB) through adsorption and as well as through photocatalysis under visible light irradiation. The system was characterized by structural and morphological study. The adsorption and photocatalytic study of MB were evaluated with different concentrations of dye in aqueous solution. This work brings the MoS2-TiO2 nanostructure as excellent adsorbent as well as efficient photocatalyst materials which can be used for organic dye removal towards waste-water treatment.

Mapping Catalytically Relevant Edge Electronic States of MoS2

Science.gov (United States)

2018-01-01

Molybdenum disulfide (MoS2) is a semiconducting transition metal dichalcogenide that is known to be a catalyst for both the hydrogen evolution reaction (HER) as well as for hydro-desulfurization (HDS) of sulfur-rich hydrocarbon fuels. Specifically, the edges of MoS2 nanostructures are known to be far more catalytically active as compared to unmodified basal planes. However, in the absence of the precise details of the geometric and electronic structure of the active catalytic sites, a rational means of modulating edge reactivity remain to be developed. Here we demonstrate using first-principles calculations, X-ray absorption spectroscopy, as well as scanning transmission X-ray microscopy (STXM) imaging that edge corrugations yield distinctive spectroscopic signatures corresponding to increased localization of hybrid Mo 4d states. Independent spectroscopic signatures of such edge states are identified at both the S L2,3 and S K-edges with distinctive spatial localization of such states observed in S L2,3-edge STXM imaging. The presence of such low-energy hybrid states at the edge of the conduction band is seen to correlate with substantially enhanced electrocatalytic activity in terms of a lower Tafel slope and higher exchange current density. These results elucidate the nature of the edge electronic structure and provide a clear framework for its rational manipulation to enhance catalytic activity. PMID:29721532

Stable MoS2 Field-Effect Transistors Using TiO2 Interfacial Layer at Metal/MoS2 Contact

KAUST Repository

Park, Woojin; Min, Jung-Wook; Shaikh, Sohail F.; Hussain, Muhammad Mustafa

2017-01-01

dioxide (TiO2) interfacial layer between contact metal and MoS2 channel is suggested to achieve more stable performances. The reduced threshold voltage (VTH) shift and reduced series resistance (RSD) were simultaneously achieved.

MoS2 anchored free-standing three dimensional vertical graphene foam based binder-free electrodes for enhanced lithium-ion storage

International Nuclear Information System (INIS)

Ouyang, Bo; Wang, Ying; Zhang, Zheng; Rawat, R.S.

2016-01-01

The vertical graphene with hierarchical three-dimensional network architecture is a promising substrate for high energy and power density Li-ion battery due to its large surface area, inherent three-dimensional network and excellent ion transport property. Three dimensional vertical graphene (3DVG) is synthesized via plasma enhanced chemical vapor deposition (PECVD) using cost-effective and environment-friendly natural oil of M. alternifolia as precursor. The MoS 2 nanosheets are then anchored on free-standing 3DVG by hydrothermal method to make the binder free MoS 2 @3DVG anode of a Li-ion battery. The MoS 2 @3DVG electrodes deliver an enhanced capacity of 670 mAh g −1 with the capacity retention of 99% after 30 cycles at 100 mA g −1 , much better than that of the reference sample of MoS 2 @3DG (550 mAh g −1 at 100 mA g −1 ) which uses 3D planar graphene. Superior performance of the vertical graphene based electrode is attributed to the unique hierarchical structure and densely packed reactive edges of the as-synthesized 3DVG. The versatility of plasma-assisted natural precursor based vertical graphene as functional nano-structured substrate for MoS 2 , as active material, for advanced energy storage devices is demonstrated.

Observation of abnormal mobility enhancement in multilayer MoS2 transistor by synergy of ultraviolet illumination and ozone plasma treatment

Science.gov (United States)

Guo, Junjie; Yang, Bingchu; Zheng, Zhouming; Jiang, Jie

2017-03-01

Mobility engineering through physical or chemical process is a fruitful approach for the atomically-layered two-dimensional electronic applications. Unfortunately, the usual process with either illumination or oxygen treatment would greatly deteriorate the mobility in two-dimensional MoS2 field-effect transistor (FET). Here, in this work, we report that the mobility can be abnormally enhanced to an order of magnitude by the synergy of ultraviolet illumination (UV) and ozone plasma treatment in multilayer MoS2 FET. This abnormal mobility enhancement is attributed to the trap passivation due to the photo-generated excess carriers during UV/ozone plasma treatment. An energy band model based on Schottky barrier modulation is proposed to understand the underlying mechanism. Raman spectra results indicate that the oxygen ions are incorporated into the surface of MoS2 (some of them are in the form of ultra-thin Mo-oxide) and can further confirm this proposed mechanism. Our results can thus provide a simple approach for mobility engineering in MoS2-based FET and can be easily expanded to other 2D electronic devices, which represents a significant step toward applications of 2D layered materials in advanced cost-effective electronics.

Atomic-scale insight into the origin of pyridine inhibition of MoS2-based hydrotreating catalysts

DEFF Research Database (Denmark)

Temel, Burcin; Tuxen, Anders K.; Kibsgaard, Jakob

2010-01-01

in earlier IR experiments on high surface alumina-supported MoS2 catalyst. The adsorption sites appear to be very similar to the brim sites involved in hydrogenation reactions in HDS. Thus, the combined STM and DFT results provide new atomic-scale insight into the inhibition effect of basic N......-compounds in HDS and the first direct observation of the adsorption mode of basic N-compounds on the catalytically active MoS2 edges. Our results lend further support to previously reported correlations between inhibiting strength and proton affinity for the N-containing compounds....

Microcapsules Containing pH-Responsive, Fluorescent Polymer-Integrated MoS2: An Effective Platform for in Situ pH Sensing and Photothermal Heating.

Science.gov (United States)

Park, Chan Ho; Lee, Sangmin; Pornnoppadol, Ghasidit; Nam, Yoon Sung; Kim, Shin-Hyun; Kim, Bumjoon J

2018-03-14

We report the design of a novel microcapsule platform for in situ pH sensing and photothermal heating, which involves the encapsulation of pH-responsive polymer-coated molybdenum disulfide (MoS 2 ) nanosheets (NSs) in microcapsules with an aqueous core and a semipermeable polymeric shell. The MoS 2 NSs were functionalized with pH-responsive polymers having fluorescent groups at the distal end to provide pH-sensitive Förster resonance energy transfer (FRET) effect. The pH-responsive polymers were carefully designed to produce a dramatic change in the polymer conformation, which translated to a change in the FRET efficiency near pH 7.0 in response to subtle pH changes, enabling the detection of cancer cells. The pH-sensitive MoS 2 NSs were microfluidically encapsulated within semipermeable membranes to yield microcapsules with a uniform size and composition. The microcapsules retained the MoS 2 NSs without leakage while allowing the diffusion of small ions and water through the membrane. At the same time, the membranes excluded adhesive proteins and lipids in the surrounding media, protecting the encapsulated MoS 2 NSs from deactivation and enabling in situ pH monitoring. Moreover, the encapsulated MoS 2 NSs showed high-performance photothermal heating, rendering the dual-functional microcapsules highly suitable for cancer diagnosis and treatment.

Theoretical study of thermoelectric properties of few-layer MoS2 and WSe2.

Science.gov (United States)

Huang, Wen; Luo, Xin; Gan, Chee Kwan; Quek, Su Ying; Liang, Gengchiau

2014-06-14

Molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) are prototypical layered two-dimensional transition metal dichalcogenide materials, with each layer consisting of three atomic planes. We refer to each layer as a trilayer (TL). We study the thermoelectric properties of 1-4TL MoS2 and WSe2 using a ballistic transport approach based on the electronic band structures and phonon dispersions obtained from first-principles calculations. Our results show that the thickness dependence of the thermoelectric properties is different under n-type and p-type doping conditions. Defining ZT1st peak as the first peak in the thermoelectric figure of merit ZT as doping levels increase from zero at 300 K, we found that ZT1st peak decreases as the number of layers increases for MoS2, with the exception of 2TL in n-type doping, which has a slightly higher value than 1TL. However, for WSe2, 2TL has the largest ZT1st peak in both n-type and p-type doping, with a ZT1st peak value larger than 1 for n-type WSe2. At high temperatures (T > 300 K), ZT1st peak dramatically increases when the temperature increases, especially for n-type doping. The ZT1st peak of n-type 1TL-MoS2 and 2TL-WSe2 can reach 1.6 and 2.1, respectively.

Efficient evaluation of epitaxial MoS2 on sapphire by direct band structure imaging

Science.gov (United States)

Kim, Hokwon; Dumcenco, Dumitru; Fregnaux, Mathieu; Benayad, Anass; Kung, Yen-Cheng; Kis, Andras; Renault, Olivier; Lanes Group, Epfl Team; Leti, Cea Team

The electronic band structure evaluation of two-dimensional metal dichalcogenides is critical as the band structure can be greatly influenced by the film thickness, strain, and substrate. Here, we performed a direct measurement of the band structure of as-grown monolayer MoS2 on single crystalline sapphire by reciprocal-space photoelectron emission microscopy with a conventional laboratory ultra-violet He I light source. Arrays of gold electrodes were deposited onto the sample in order to avoid charging effects due to the insulating substrate. This allowed the high resolution mapping (ΔE = 0.2 eV Δk = 0.05 Å-1) of the valence states in momentum space down to 7 eV below the Fermi level. The high degree of the epitaxial alignment of the single crystalline MoS2 nuclei was verified by the direct momentum space imaging over a large area containing multiple nuclei. The derived values of the hole effective mass were 2.41 +/-0.05 m0 and 0.81 +/-0.05 m0, respectively at Γ and K points, consistent with the theoretical values of the freestanding monolayer MoS2 reported in the literature. HK acknowledges the french CEA Basic Technological Research program (RTB) for funding.

Silicene on MoS2: role of the van der Waals interaction

KAUST Repository

Zhu, Jiajie; Schwingenschlö gl, Udo

2015-01-01

We demonstrate for silicene on MoS2 substrate the limitations of the predictive power of first principles calculations based on van der Waals density functional theory. Only the optB86b-vdW functional is found to give reasonable agreement

Efficient visible-light photocatalytic and enhanced photocorrosion inhibition of Ag2WO4 decorated MoS2 nanosheets

Science.gov (United States)

Thangavel, Sakthivel; Thangavel, Srinivas; Raghavan, Nivea; Alagu, Raja; Venugopal, Gunasekaran

2017-11-01

The use of two-dimensional nanomaterials as co-catalysts in the photodegradation of toxic compounds using light irradiation is an attractive ecofriendly process. In this study, we prepared a novel MoS2/Ag2WO4 nanohybrid via a one-step hydrothermal approach and the photocatalytic properties were investigated by the degradation of methyl-orange under stimulated irradiation. The nanohybrid exhibits enhanced efficiency in dye degradation compared to the bare Ag2WO4 nanorods; the same has been evidently confirmed with UV-visible spectra and total organic carbon removal analysis. The pseudo-first order rate constant of the nanohybrid is nearly 1.8 fold higher than that of the bare Ag2WO4 nanorods. With the aid of classical radical quenching and photoluminescence spectral analysis, a reasonable mechanism has been derived for the addition of MoS2 to nanohybrids to enhance the photocatalytic efficiency. MoS2 prevents photocorrosion of Ag2WO4 and also diminishes the number of photogenerated electron-hole recombination. Our findings could provide new insights in understanding the mechanism of the MoS2/Ag2WO4 nanohybrid as an efficient photocatalyst suitable for waste-water treatment and remedial applications.

Gold Dispersion and Activation on the Basal Plane of Single-Layer MoS2

KAUST Repository

Merida, Cindy S.; Le, Duy; Echeverrí a, Elena M.; Nguyen, Ariana E.; Rawal, Takat B; Naghibi Alvillar, Sahar; Kandyba, Viktor; Al-Mahboob, Abdullah; Losovyj, Yaroslav B.; Katsiev, Khabiboulakh; Valentin, Michael D.; Huang, Chun-Yu; Gomez, Michael J.; Lu, I-Hsi; Guan, Alison; Barinov, Alexei; Rahman, Talat S; Dowben, Peter A.; Bartels, Ludwig

2017-01-01

Gold islands are typically associated with high binding affinity to adsorbates and catalytic activity. Here we present the growth of such dispersed nanoscale gold islands on single layer MoS2, prepared on an inert SiO2/Si support by chemical vapor deposition (CVD). This study offers a combination of growth process development, optical characterization, photoelectron spectroscopy at sub-micron spatial resolution, and advanced density functional theory modeling for detailed insight into the electronic interaction between gold and single-layer MoS2. In particular, we find the gold density of states in Au/MoS2/SiO2/Si to be far less well-defined than Au islands on other 2-dimensional materials such as graphene, for which we also provide data. We attribute this effect to the presence of heterogeneous Au adatom/MoS2-support interactions within the nanometer-scale gold cluster. As a consequence, theory predicts that CO will exhibit adsorption energies in excess of 1 eV at the Au cluster edges, where the local density of states is dominated by Au 5dz2 symmetry.

Gold Dispersion and Activation on the Basal Plane of Single-Layer MoS2

KAUST Repository

Merida, Cindy S.

2017-12-09

Gold islands are typically associated with high binding affinity to adsorbates and catalytic activity. Here we present the growth of such dispersed nanoscale gold islands on single layer MoS2, prepared on an inert SiO2/Si support by chemical vapor deposition (CVD). This study offers a combination of growth process development, optical characterization, photoelectron spectroscopy at sub-micron spatial resolution, and advanced density functional theory modeling for detailed insight into the electronic interaction between gold and single-layer MoS2. In particular, we find the gold density of states in Au/MoS2/SiO2/Si to be far less well-defined than Au islands on other 2-dimensional materials such as graphene, for which we also provide data. We attribute this effect to the presence of heterogeneous Au adatom/MoS2-support interactions within the nanometer-scale gold cluster. As a consequence, theory predicts that CO will exhibit adsorption energies in excess of 1 eV at the Au cluster edges, where the local density of states is dominated by Au 5dz2 symmetry.

Oxygen Passivation Mediated Tunability of Trion and Excitons in MoS2

KAUST Repository

Gogoi, Pranjal Kumar

2017-08-17

Using wide spectral range in situ spectroscopic ellipsometry with systematic ultrahigh vacuum annealing and in situ exposure to oxygen, we report the complex dielectric function of MoS2 isolating the environmental effects and revealing the crucial role of unpassivated and passivated sulphur vacancies. The spectral weights of the A (1.92 eV) and B (2.02 eV) exciton peaks in the dielectric function reduce significantly upon annealing, accompanied by spectral weight transfer in a broad energy range. Interestingly, the original spectral weights are recovered upon controlled oxygen exposure. This tunability of the excitonic effects is likely due to passivation and reemergence of the gap states in the band structure during oxygen adsorption and desorption, respectively, as indicated by ab initio density functional theory calculation results. This Letter unravels and emphasizes the important role of adsorbed oxygen in the optical spectra and many-body interactions of MoS2.

Oxygen Passivation Mediated Tunability of Trion and Excitons in MoS2

Science.gov (United States)

Gogoi, Pranjal Kumar; Hu, Zhenliang; Wang, Qixing; Carvalho, Alexandra; Schmidt, Daniel; Yin, Xinmao; Chang, Yung-Huang; Li, Lain-Jong; Sow, Chorng Haur; Neto, A. H. Castro; Breese, Mark B. H.; Rusydi, Andrivo; Wee, Andrew T. S.

2017-08-01

Using wide spectral range in situ spectroscopic ellipsometry with systematic ultrahigh vacuum annealing and in situ exposure to oxygen, we report the complex dielectric function of MoS2 isolating the environmental effects and revealing the crucial role of unpassivated and passivated sulphur vacancies. The spectral weights of the A (1.92 eV) and B (2.02 eV) exciton peaks in the dielectric function reduce significantly upon annealing, accompanied by spectral weight transfer in a broad energy range. Interestingly, the original spectral weights are recovered upon controlled oxygen exposure. This tunability of the excitonic effects is likely due to passivation and reemergence of the gap states in the band structure during oxygen adsorption and desorption, respectively, as indicated by ab initio density functional theory calculation results. This Letter unravels and emphasizes the important role of adsorbed oxygen in the optical spectra and many-body interactions of MoS2 .

Oxygen Passivation Mediated Tunability of Trion and Excitons in MoS2

KAUST Repository

Gogoi, Pranjal Kumar; Hu, Zhenliang; Wang, Qixing; Carvalho, Alexandra; Schmidt, Daniel; Yin, Xinmao; Chang, Yung-Huang; Li, Lain-Jong; Sow, Chorng Haur; Neto, A.  H. Castro; Breese, Mark B.  H.; Rusydi, Andrivo; Wee, Andrew T.  S.

2017-01-01

Using wide spectral range in situ spectroscopic ellipsometry with systematic ultrahigh vacuum annealing and in situ exposure to oxygen, we report the complex dielectric function of MoS2 isolating the environmental effects and revealing the crucial role of unpassivated and passivated sulphur vacancies. The spectral weights of the A (1.92 eV) and B (2.02 eV) exciton peaks in the dielectric function reduce significantly upon annealing, accompanied by spectral weight transfer in a broad energy range. Interestingly, the original spectral weights are recovered upon controlled oxygen exposure. This tunability of the excitonic effects is likely due to passivation and reemergence of the gap states in the band structure during oxygen adsorption and desorption, respectively, as indicated by ab initio density functional theory calculation results. This Letter unravels and emphasizes the important role of adsorbed oxygen in the optical spectra and many-body interactions of MoS2.

Sustainable one-step synthesis of hierarchical microspheres of PEGylated MoS2 nanosheets and MoO3 nanorods: Their cytotoxicity towards lung and breast cancer cells

Science.gov (United States)

Kumar, Neeraj; George, Blassan Plackal Adimuriyil; Abrahamse, Heidi; Parashar, Vyom; Ngila, Jane Catherine

2017-02-01

Nanotechnology provides an emerging potent alternate mode of cancer therapy. Nanomaterials dispersion or solubility is of particular concern in utilising their full potential applications in biomedical fields. PEGylation of nanomaterials is considered to provide products with stealth properties, and physiological environment with no obvious adverse effects. The purpose of this work was to develop a sustainable one-step method for fabrication of hierarchical microspheres of PEGylated MoS2 nanosheets using a stoichiometric ratio of Mo(VI) and thiourea. This study further investigated the cytotoxicity of the PEGylated MoS2 nanosheets towards lung (A549) and breast cancer (MCF-7) cell lines by analysing morphological changes and performing dose-dependent cell proliferation, and cytotoxicity analysis using adenosine 5‧-triphosphate (ATP), and lactate dehydrogenase (LDH) assay. For comparison, MoO3 nanorods were synthesised by simple chemical route and their cytotoxicity towards lung (A549) and breast cancer (MCF-7) cell lines were checked. The findings suggested that PEGylated MoS2 nanosheets have excellent cytotoxicity towards breast cancer (MCF-7) cell lines, and MoO3 have better cytotoxicity towards lung (A549) cancer cell lines. This work envisages an accessible foundation for engineering sophisticated biomolecule-MoS2 nanosheets conjugation due to the defect-rich biocompatible surface, to achieve great versatility, additional functions, and further advances in the biomedical field.

Magnetic MoS2 pizzas and sandwiches with Mnn (n = 1-4) cluster toppings and fillings: A first-principles investigation

Science.gov (United States)

Zhang, Meng; Huang, Zhongjia; Wang, Xiao; Zhang, Hongyu; Li, Taohai; Wu, Zhaolong; Luo, Youhua; Cao, Wei

2016-01-01

The inorganic layered crystal (ILC) MoS2 in low dimensions is considered as one of the most promising and efficient semiconductors. To enable the magnetism and keep intrinsic crystal structures, we carried out a first-principles study of the magnetic and semiconductive monolayer MoS2 adsorbed with the Mnn (n = 1-4) clusters, and bilayer MoS2 intercalated with the same clusters. Geometric optimizations of the Mnn@MoS2 systems show the complexes prefer to have Mnn@MoS2(M) pizza and Mnn@MoS2(B) sandwich forms in the mono- and bi-layered cases, respectively. Introductions of the clusters will enhance complex stabilities, while bonds and charge transfers are found between external Mn clusters and the S atoms in the hosts. The pizzas have medium magnetic moments of 3, 6, 9, 4 μB and sandwiches of 3, 2, 3, 2 μB following the manganese numbers. The pizzas and sandwiches are semiconductors, but with narrower bandgaps compared to their corresponding pristine hosts. Direct bandgaps were found in the Mnn@MoS2(M) (n = 1,4) pizzas, and excitingly in the Mn1@MoS2(B) sandwich. Combining functional clusters to the layered hosts, the present work shows a novel material manipulation strategy to boost semiconductive ILCs applications in magnetics.

Comparative studies of AlGaN/GaN MOS-HEMTs with stacked gate dielectrics by the mixed thin film growth method

International Nuclear Information System (INIS)

Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Ho, Chiu-Sheng; Lee, Ching-Sung

2013-01-01

This paper reports Al 0.27 Ga 0.73 N/GaN metal–oxide–semiconductor high electron mobility transistors (MOS-HEMTs) with stacked Al 2 O 3 /HfO 2 gate dielectrics by using hydrogen peroxideoxidation/sputtering techniques. The Al 2 O 3 employed as a gate dielectric and surface passivation layer effectively suppresses the gate leakage current, improves RF drain current collapse and exhibits good thermal stability. Moreover, by stacking the good insulating high-k HfO 2 dielectric further suppresses the gate leakage, enhances the dielectric breakdown field and power-added efficiency, and decreases the equivalent oxide thickness. The present MOS-HEMT design has demonstrated superior improvements of 10.1% (16.4%) in the maximum drain–source current (I DS,max ), 11.4% (22.5%) in the gate voltage swing and 12.5%/14.4% (21.9%/22.3%) in the two-terminal gate–drain breakdown/turn-on voltages (BV GD /V ON ), and the present design also demonstrates the lowest gate leakage current and best thermal stability characteristics as compared to two reference MOS-HEMTs with a single Al 2 O 3 /(HfO 2 ) dielectric layer of the same physical thickness. (invited paper)

Facile synthesis of soybean phospholipid-encapsulated MoS2 nanosheets for efficient in vitro and in vivo photothermal regression of breast tumor

Directory of Open Access Journals (Sweden)

Li X

2016-04-01

Full Text Available Xiang Li,1 Yun Gong,2,3 Xiaoqian Zhou,1 Hui Jin,1 Huanhuan Yan,1 Shige Wang,2 Jun Liu11Department of Breast-Thyroid Surgery, Shanghai General Hospital of Nanjing Medical University, Shanghai, People’s Republic of China; 2College of Science, University of Shanghai for Science and Technology, 3Shanghai Publishing and Printing College, Shanghai, People’s Republic of ChinaAbstract: Two-dimensional MoS2 nanosheet has been extensively explored as a photothermal agent for tumor regression; however, its surface modification remains a great challenge. Herein, as an alternative to surface polyethylene glycol modification (PEGylation, a facile approach based on “thin-film” strategy has been proposed for the first time to produce soybean phospholipid-encapsulated MoS2 (SP-MoS2 nanosheets. By simply vacuum-treating MoS2 nanosheets/soybean phospholipid/chloroform dispersion in a rotary evaporator, SP-MoS2 nanosheet was successfully constructed. Owing to the steric hindrance of polymer chains, the surface-coated soybean phospholipid endowed MoS2 nanosheets with excellent colloidal stability. Without showing detectable in vitro and in vivo hemolysis, coagulation, and cyto-/histotoxicity, the constructed SP-MoS2 nanosheets showed good photothermal conversion performance and photothermal stability. SP-MoS2 nanosheet was shown to be a promising platform for in vitro and in vivo breast tumor photothermal therapy. The produced SP-MoS2 nanosheets featured low cost, simple fabrication, and good in vivo hemo-/histocompatibility and hold promising potential for future clinical tumor therapy.Keywords: soybean phospholipid, MoS2 nanosheets, in vivo, photothermal regression, breast tumor

Strain distributions and their influence on electronic structures of WSe2-MoS2 laterally strained heterojunctions

Science.gov (United States)

Zhang, Chendong; Li, Ming-Yang; Tersoff, Jerry; Han, Yimo; Su, Yushan; Li, Lain-Jong; Muller, David A.; Shih, Chih-Kang

2018-02-01

Monolayer transition metal dichalcogenide heterojunctions, including vertical and lateral p-n junctions, have attracted considerable attention due to their potential applications in electronics and optoelectronics. Lattice-misfit strain in atomically abrupt lateral heterojunctions, such as WSe2-MoS2, offers a new band-engineering strategy for tailoring their electronic properties. However, this approach requires an understanding of the strain distribution and its effect on band alignment. Here, we study a WSe2-MoS2 lateral heterojunction using scanning tunnelling microscopy and image its moiré pattern to map the full two-dimensional strain tensor with high spatial resolution. Using scanning tunnelling spectroscopy, we measure both the strain and the band alignment of the WSe2-MoS2 lateral heterojunction. We find that the misfit strain induces type II to type I band alignment transformation. Scanning transmission electron microscopy reveals the dislocations at the interface that partially relieve the strain. Finally, we observe a distinctive electronic structure at the interface due to hetero-bonding.

Temperature-Dependent Electrical Properties of Al2O3-Passivated Multilayer MoS2 Thin-Film Transistors

Directory of Open Access Journals (Sweden)

Seok Hwan Jeong

2018-03-01

Full Text Available It is becoming more important for electronic devices to operate stably and reproducibly under harsh environments, such as extremely low and/or high temperatures, for robust and practical applications. Here, we report on the effects of atomic-layer-deposited (ALD aluminum oxide (Al2O3 passivation on multilayer molybdenum disulfide (MoS2 thin-film transistors (TFTs and their temperature-dependent electrical properties, especially at a high temperature range from 293 K to 380 K. With the aid of ultraviolet-ozone treatment, an Al2O3 layer was uniformly applied to cover the entire surface of MoS2 TFTs. Our Al2O3-passivated MoS2 TFTs exhibited not only a dramatic reduction of hysteresis but also enhancement of current in output characteristics. In addition, we investigated the temperature-dependent behaviors of the TFT performance, including intrinsic carrier mobility based on the Y-function method.

Insights into highly improved solar-driven photocatalytic oxygen evolution over integrated Ag3PO4/MoS2 heterostructures

Science.gov (United States)

Cui, Xingkai; Yang, Xiaofei; Xian, Xiaozhai; Tian, Lin; Tang, Hua; Liu, Qinqin

2018-04-01

Oxygen evolution has been considered as the rate-determining step in photocatalytic water splitting due to its sluggish four-electron half-reaction rate, the development of oxygen-evolving photocatalysts with well-defined morphologies and superior interfacial contact is highly important for achieving high-performance solar water splitting. Herein, we report the fabrication of Ag3PO4/MoS2 nanocomposites and, for the first time, their use in photocatalytic water splitting into oxygen under LED light illumination. Ag3PO4 nanoparticles were found to be anchored evenly on the surface of MoS2 nanosheets, confirming an efficient hybridization of two semiconductor materials. A maximum oxygen-generating rate of 201.6 mol L-1 g-1 h-1 was determined when 200 mg MoS2 nanosheets were incorporated into Ag3PO4 nanoparticles, which is around 5 times higher than that of bulk Ag3PO4. Obvious enhancements in light-harvesting property, as well as electron-hole separation and charge transportation are revealed by the combination of different characterizations. ESR analysis verified that more active oxygen-containing radicals generate over illuminated Ag3PO4/MoS2 composite photocatalysts rather than irradiated Ag3PO4. The improvement in oxygen evolution performance of Ag3PO4/MoS2 composite photocatalysts is ascribed to wide spectra response in the visible-light region, more efficient charge separation and enhanced oxidation capacity in the valence band (VB). This study provides new insights into the design and development of novel composite photocatalytic materials for solar-to-fuel conversion.

Ultrathin 1T-phase MoS2 nanosheets decorated hollow carbon microspheres as highly efficient catalysts for solar energy harvesting and storage

KAUST Repository

Hsiao, Min-Chien

2017-02-08

The composite of MoS2 and hollow carbon sphere (MoS2@HCS) is prepared via a glucose-assisted one pot synthesis. The composite consists of hierarchical spheres with a diameter of 0.5–4 μm and these hollow spheres are decorated with a number of curled and interlaced MoS2 nanosheets. After the composite is subject to the lithium intercalation, the MoS2 is converted from 2H to 1T phase. In this current work, the activities of 1T-MoS2@HCS toward photocatalytic hydrogen evolution and the reduction of I3− in dye-sensitized solar cells (DSCs) are systemically investigated. When evaluated as the photocatalyst for hydrogen evolution, the amount of evolved hydrogen over 1T-MoS2@HCS can reach 143 μmol in 2 h, being 3.6 times higher than as-synthesized 2H-MoS2@HCS. Additionally, the 1T-MoS2@HCS can be employed as the counter electrode (CE) material in DSCs. The DSCs based on 1T-MoS2@HCS CE possesses the power conversion efficiency of 8.94%, being higher than that with 2H-MoS2@HCS CE (8.16%) and comparable to that with Pt CE (8.87%). Our study demonstrates that 1T-MoS2@HCS has a great potential as an inexpensive alternative to Pt catalysts.

Ultrathin 1T-phase MoS2 nanosheets decorated hollow carbon microspheres as highly efficient catalysts for solar energy harvesting and storage

KAUST Repository

Hsiao, Min-Chien; Chang, Chin-Yu; Niu, Li-Juan; Bai, Feng; Li, Lain-Jong; Shen, Hsin-Hui; Lin, Jeng-Yu; Lin, Tsung-Wu

2017-01-01

The composite of MoS2 and hollow carbon sphere (MoS2@HCS) is prepared via a glucose-assisted one pot synthesis. The composite consists of hierarchical spheres with a diameter of 0.5–4 μm and these hollow spheres are decorated with a number of curled and interlaced MoS2 nanosheets. After the composite is subject to the lithium intercalation, the MoS2 is converted from 2H to 1T phase. In this current work, the activities of 1T-MoS2@HCS toward photocatalytic hydrogen evolution and the reduction of I3− in dye-sensitized solar cells (DSCs) are systemically investigated. When evaluated as the photocatalyst for hydrogen evolution, the amount of evolved hydrogen over 1T-MoS2@HCS can reach 143 μmol in 2 h, being 3.6 times higher than as-synthesized 2H-MoS2@HCS. Additionally, the 1T-MoS2@HCS can be employed as the counter electrode (CE) material in DSCs. The DSCs based on 1T-MoS2@HCS CE possesses the power conversion efficiency of 8.94%, being higher than that with 2H-MoS2@HCS CE (8.16%) and comparable to that with Pt CE (8.87%). Our study demonstrates that 1T-MoS2@HCS has a great potential as an inexpensive alternative to Pt catalysts.

Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

KAUST Repository

Li, Ming Yang

2015-07-30

Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.