Supercontinuum: broad as a lamp, bright as a laser, now in the mid-infrared

Science.gov (United States)

Moselund, Peter M.; Petersen, Christian; Dupont, Sune; Agger, Christian; Bang, Ole; Keiding, Søren R.

2012-06-01

Based on the experience gained developing our market leading visible spectrum supercontinuum sources NKT Photonics has built the first mid-infrared supercontinuum source based on modelocked picosecond fiber lasers. The source is pumped by a ~ 2 um laser based on a combination of erbium and thulium and use ZBLAN fibers to generate a 1.75-4.4 μm spectrum. We will present results obtained by applying the source for mid-infrared microscopy where absorption spectra can be used to identify the chemical nature of different parts of a sample. Subsequently, we discuss the possible application of a mid-IR supercontinuum source in other areas including infrared countermeasures.

Mid-infrared optical parametric oscillator pumped by an amplified random fiber laser

Science.gov (United States)

Shang, Yaping; Shen, Meili; Wang, Peng; Li, Xiao; Xu, Xiaojun

2017-01-01

Recently, the concept of random fiber lasers has attracted a great deal of attention for its feature to generate incoherent light without a traditional laser resonator, which is free of mode competition and insure the stationary narrow-band continuous modeless spectrum. In this Letter, we reported the first, to the best of our knowledge, optical parametric oscillator (OPO) pumped by an amplified 1070 nm random fiber laser (RFL), in order to generate stationary mid-infrared (mid-IR) laser. The experiment realized a watt-level laser output in the mid-IR range and operated relatively stable. The use of the RFL seed source allowed us to take advantage of its respective stable time-domain characteristics. The beam profile, spectrum and time-domain properties of the signal light were measured to analyze the process of frequency down-conversion process under this new pumping condition. The results suggested that the near-infrared (near-IR) signal light `inherited' good beam performances from the pump light. Those would be benefit for further develop about optical parametric process based on different pumping circumstances.

Estimating optical feedback from a chalcogenide fiber in mid-infrared quantum cascade lasers

Directory of Open Access Journals (Sweden)

L. Jumpertz

2016-10-01

Full Text Available The amount of optical feedback originating from a chalcogenide fiber used to couple light from a mid-infrared quantum cascade laser is evaluated experimentally. Threshold reduction measurements on the fibered laser, combined with an analytical study of a rate equations model of the laser under optical feedback, allow estimating the feedback strength between 11% and 15% depending on the fiber cleavage quality. While this remains below the frontier of the chaotic regime, it is sufficient to deeply modify the optical spectrum of a quantum cascade laser. Hence for applications such as gas spectroscopy, where the shape of the optical spectrum is of prime importance, the use of mid-infrared optical isolators may be necessary for fibered quantum cascade lasers to be fully exploited.

Optical system design with common aperture for mid-infrared and laser composite guidance

Science.gov (United States)

Zhang, Xuanzhi; Yang, Zijian; Sun, Ting; Yang, Huamei; Han, Kunye; Hu, Bo

2017-02-01

When the field of operation of precision strike missiles is more and more complicated, autonomous seekers will soon encounter serious difficulties, especially with regard to low signature targets and complex scenarios. So the dual-mode sensors combining an imaging sensor with a semi-active laser seeker are conceived to overcome these specific problems. Here the sensors composed a dual field of view mid-infrared thermal imaging camera and a laser range finder have the common optical aperture which produced the minization of seeker construction. The common aperture optical systems for mid-infrared and laser dual-mode guildance have been developed, which could meet the passive middle infrared high-resolution imaging and the active laser high-precision indication and ranging. The optical system had good image quality, and fulfilled the performance requirement of seeker system. The design and expected performance of such a dual-mode optical system will be discussed.

Comparison of laser-based mitigation of fused silica surface damage using mid- versus far-infrared lasers

Energy Technology Data Exchange (ETDEWEB)

Yang, S T; Matthews, M J; Elhadj, S; Cooke, D; Guss, G M; Draggoo, V G; Wegner, P J

2009-12-16

Laser induced growth of optical damage can limit component lifetime and therefore operating costs of large-aperture fusion-class laser systems. While far-infrared (IR) lasers have been used previously to treat laser damage on fused silica optics and render it benign, little is known about the effectiveness of less-absorbing mid-IR lasers for this purpose. In this study, they quantitatively compare the effectiveness and efficiency of mid-IR (4.6 {micro}m) versus far-IR (10.6 {micro}m) lasers in mitigating damage growth on fused silica surfaces. The non-linear volumetric heating due to mid-IR laser absorption is analyzed by solving the heat equation numerically, taking into account the temperature-dependent absorption coefficient {alpha}(T) at {lambda} = 4.6 {micro}m, while far-IR laser heating is well-described by a linear analytic approximation to the laser-driven temperature rise. In both cases, the predicted results agree well with surface temperature measurements based on infrared radiometry, as well as sub-surface fictive temperature measurements based on confocal Raman microscopy. Damage mitigation efficiency is assessed using a figure of merit (FOM) relating the crack healing depth to laser power required, under minimally-ablative conditions. Based on their FOM, they show that for cracks up to at least 500 {micro}m in depth, mitigation with a 4.6 {micro}m mid-IR laser is more efficient than mitigation with a 10.6 {micro}m far-IR laser. This conclusion is corroborated by direct application of each laser system to the mitigation of pulsed laser-induced damage possessing fractures up to 225 {micro}m in depth.

Terahertz and Mid Infrared

CERN Document Server

Shulika, Oleksiy; Detection of Explosives and CBRN (Using Terahertz)

2014-01-01

The reader will find here a timely update on new THz sources and detection schemes as well as concrete applications to the detection of Explosives and CBRN. Included is a method to identify hidden RDX-based explosives (pure and plastic ones) in the frequency domain study by Fourier Transformation, which has been complemented by the demonstration of improvement of the quality of the images captured commercially available THz passive cameras. The presented examples show large potential for the detection of small hidden objects at long distances (6-10 m).  Complementing the results in the short-wavelength range, laser spectroscopy with a mid-infrared, room temperature, continuous wave, DFB laser diode and high performance DFB QCL have been demonstrated to offer excellent enabling sensor technologies for environmental monitoring, medical diagnostics, industrial and security applications.  From the new source point of view a number of systems have been presented - From superconductors to semiconductors, e.g. Det...

Recent progress in diode-pumped mid-infrared vibronic solid-state lasers

International Nuclear Information System (INIS)

Sorokina, I.T.; Sorokin, E.; Mirov, S.; Schaffers, K.

2002-01-01

Full text: The last few years were marked by the increased interest of researchers towards the new class of transition-metal doped zinc chalcogenides. In particular Cr:ZnSe attracts a lot of attention as broadly tunable continuous-wave (cw), mode-locked and diode-pumped lasers operating around 2.5 mm. This interest is explained by the absence of other comparable tunable room-temperature laser sources in this spectral region. However, another member of the II-VI compounds family Cr:ZnS, has yet remained barely studied as a laser medium. Recently we demonstrated the first continuous-wave room-temperature tunable over more than 280 nm around 2.3 μm Cr 2+ :ZnS laser, pumped with a Co:MgF2 laser and yielding over 100 mW of output power. The most recent result is the development of a compact tunable over 700 nm continuous-wave room-temperature Cr 2+ :ZnS laser, pumped by the diode-pumped Er-fiber laser at 1.6 μm and generating 0.7 W of the linearly polarized radiation. We also demonstrated direct diode-pumping at 1.6 μm of the Cr 2+ :ZnS. Although the Cr:ZnS exhibited lower (relatively to the Cr:ZnSe) efficiency and output power due to the higher passive losses of the available Cr:ZnS samples, the analysis of the spectroscopic and laser data indicates the high potential of Cr:ZnS for compact broadly tunable mid-infrared systems, as well as for high power applications. The physics of the novel diode-pumped laser systems is highly interesting. It comprises the features of the ion-doped dielectric crystalline lasers and semiconductors. For example, we observe in these media, for the first time to our knowledge, a new nonlinear phenomenon, which is analogous to the opto-optical switching process, where the laser output of the diode-pumped continuous-wave Cr:ZnSe and Cr:ZnS lasers around 2.5 μm is modulated by only a few milliwatt of the visible (470-500 nm) and near-infrared radiation (740-770 nm). We present a physical explanation of the observed effect. Refs. 4 (author)

Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

Science.gov (United States)

Fill, Matthias; Debernardi, Pierluigi; Felder, Ferdinand; Zogg, Hans

2013-11-01

Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

Energy Technology Data Exchange (ETDEWEB)

Fill, Matthias [ETH Zurich, Laser Spectroscopy and Sensing Lab, 8093 Zurich (Switzerland); Phocone AG, 8005 Zurich (Switzerland); Debernardi, Pierluigi [IEIIT-CNR, Torino 10129 (Italy); Felder, Ferdinand [Phocone AG, 8005 Zurich (Switzerland); Zogg, Hans [ETH Zurich (Switzerland)

2013-11-11

Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

Next-generation mid-infrared sources

Science.gov (United States)

Jung, D.; Bank, S.; Lee, M. L.; Wasserman, D.

2017-12-01

The mid-infrared (mid-IR) is a wavelength range with a variety of technologically vital applications in molecular sensing, security and defense, energy conservation, and potentially in free-space communication. The recent development and rapid commercialization of new coherent mid-infrared sources have spurred significant interest in the development of mid-infrared optical systems for the above applications. However, optical systems designers still do not have the extensive optical infrastructure available to them that exists at shorter wavelengths (for instance, in the visible and near-IR/telecom wavelengths). Even in the field of optoelectronic sources, which has largely driven the growing interest in the mid-infrared, the inherent limitations of state-of-the-art sources and the gaps in spectral coverage offer opportunities for the development of new classes of lasers, light emitting diodes and emitters for a range of potential applications. In this topical review, we will first present an overview of the current state-of-the-art mid-IR sources, in particular thermal emitters, which have long been utilized, and the relatively new quantum- and interband-cascade lasers, as well as the applications served by these sources. Subsequently, we will discuss potential mid-infrared applications and wavelength ranges which are poorly served by the current stable of mid-IR sources, with an emphasis on understanding the fundamental limitations of the current source technology. The bulk of the manuscript will then explore both past and recent developments in mid-infrared source technology, including narrow bandgap quantum well lasers, type-I and type-II quantum dot materials, type-II superlattices, highly mismatched alloys, lead-salts and transition-metal-doped II-VI materials. We will discuss both the advantages and limitations of each of the above material systems, as well as the potential new applications which they might serve. All in all, this topical review does not aim

Mid-infrared pulsed laser ablation of the arterial wall. Mechanical origin of "acoustic" wall damage and its effect on wall healing

NARCIS (Netherlands)

van Erven, L.; van Leeuwen, T. G.; Post, M. J.; van der Veen, M. J.; Velema, E.; Borst, C.

1992-01-01

Pulsed mid-infrared lasers are an alternative to excimer lasers for transluminal angioplasty. The mid-infrared lasers, however, were reported to produce "acoustic" wall damage that might impair the immediate and long-term results. To study the immediate and long-term effects on the arterial wall,

A Tunable Mid-Infrared Solid-State Laser with a Compact Thermal Control System

Directory of Open Access Journals (Sweden)

Deyang Yu

2018-05-01

Full Text Available Tunable mid-infrared lasers are widely used in laser spectroscopy, gas sensing and many other related areas. In order to solve heat dissipation problems and improve the environmental temperature adaptability of solid-state laser sources, a tunable all-fiber laser pumped optical parametric oscillator (OPO was established, and a compact thermal control system based on thermoelectric coolers, an automatic temperature control circuit, cooling fins, fans and heat pipes was integrated and designed for the laser. This system is compact, light and air-cooling which satisfies the demand for miniaturization of lasers. A mathematical model and method was established to estimate the cooling capacity of this thermal control system under different ambient environments. A finite-element model was built and simulated to analyze the thermal transfer process. Experiments in room and high temperature environments were carried out and showed that the substrate temperature of a pump module could be maintained at a stable value with controlled precision to 0.2 degrees, while the output power stability of the laser was within ±1%. The experimental results indicate that this compact air-cooling thermal control system could effectively solve the heat dissipation problem of mid-infrared solid-state lasers with a one hundred watts level pump module in room and high temperature environments.

Heuristic modelling of laser written mid-infrared LiNbO3 stressed-cladding waveguides.

Science.gov (United States)

Nguyen, Huu-Dat; Ródenas, Airán; Vázquez de Aldana, Javier R; Martínez, Javier; Chen, Feng; Aguiló, Magdalena; Pujol, Maria Cinta; Díaz, Francesc

2016-04-04

Mid-infrared lithium niobate cladding waveguides have great potential in low-loss on-chip non-linear optical instruments such as mid-infrared spectrometers and frequency converters, but their three-dimensional femtosecond-laser fabrication is currently not well understood due to the complex interplay between achievable depressed index values and the stress-optic refractive index changes arising as a function of both laser fabrication parameters, and cladding arrangement. Moreover, both the stress-field anisotropy and the asymmetric shape of low-index tracks yield highly birefringent waveguides not useful for most applications where controlling and manipulating the polarization state of a light beam is crucial. To achieve true high performance devices a fundamental understanding on how these waveguides behave and how they can be ultimately optimized is required. In this work we employ a heuristic modelling approach based on the use of standard optical characterization data along with standard computational numerical methods to obtain a satisfactory approximate solution to the problem of designing realistic laser-written circuit building-blocks, such as straight waveguides, bends and evanescent splitters. We infer basic waveguide design parameters such as the complex index of refraction of laser-written tracks at 3.68 µm mid-infrared wavelengths, as well as the cross-sectional stress-optic index maps, obtaining an overall waveguide simulation that closely matches the measured mid-infrared waveguide properties in terms of anisotropy, mode field distributions and propagation losses. We then explore experimentally feasible waveguide designs in the search of a single-mode low-loss behaviour for both ordinary and extraordinary polarizations. We evaluate the overall losses of s-bend components unveiling the expected radiation bend losses of this type of waveguides, and finally showcase a prototype design of a low-loss evanescent splitter. Developing a realistic waveguide

Supercontinuum - broad as a lamp, bright as a laser, now in the mid-infrared

DEFF Research Database (Denmark)

Moselund, Peter M.; Petersen, Christian; Dupont, Sune

2012-01-01

Based on the experience gained developing our market leading visible spectrum supercontinuum sources NKT Photonics has built the first mid-infrared supercontinuum source based on modelocked picosecond fiber lasers. The source is pumped by a ≈ 2 um laser based on a combination of erbium and thuliu...

EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

Science.gov (United States)

Calvez, S.; Adams, M. J.

2012-09-01

achievements in the June 1987 Special Issue of IEEE Journal of Quantum Electronics. The Millennium Issue of IEEE Journal of Selected Topics in Quantum Electronics presented a further set of articles on historical aspects of the subject as well as a 'snapshot' of current research in June 2000. It is not the intention here to duplicate any of this historical material that is already available, but rather to complement it with personal recollections from researchers who were involved in laser development in the USA, France, Russia and the UK. Hence, in addition to fascinating accounts of the discovery of the theoretical condition for stimulated emission from semiconductors and of the pioneering work at IBM, there are two complementary views of the laser research at the Lebedev Institute, and personal insights into the developments at STL and at Bell Laboratories. These are followed by an account of the scientific and technological connections between the early pioneering breakthroughs and the commercialisation of semiconductor laser products. Turning to the papers from today's researchers, there is coverage of many of the current 'hot' topics including quantum cascade lasers, mid-infrared lasers, high-power lasers, the exciting developments in understanding and exploiting the nonlinear dynamics of lasers, and photonic integrated circuits with extremely high communication data capacity, as well as reports of recent progress on laser materials such as dilute nitrides and bismides, photonic crystals, quantum dots and organic semiconductors. Thanks are due to Jarlath McKenna for sterling support from IOP Publishing and to Peter Blood for instigating this Special Issue and inviting us to serve as Guest Editors.

Efficient, High-Power Mid-Infrared Laser for National Securityand Scientific Applications

Energy Technology Data Exchange (ETDEWEB)

Kiani, Leily S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2017-11-02

The LLNL fiber laser group developed a unique short-wave-infrared, high-pulse energy, highaverage- power fiber based laser. This unique laser source has been used in combination with a nonlinear frequency converter to generate wavelengths, useful for remote sensing and other applications in the mid-wave infrared (MWIR). Sources with high average power and high efficiency in this MWIR wavelength region are not yet available with the size, weight, and power requirements or energy efficiency necessary for future deployment. The LLNL developed Fiber Laser Pulsed Source (FiLPS) design was adapted to Erbium doped silica fibers for 1.55 μm pumping of Cadmium Silicon Phosphide (CSP). We have demonstrated, for the first time optical parametric amplification of 2.4 μm light via difference frequency generation using CSP with an Erbium doped fiber source. In addition, for efficiency comparison purposes, we also demonstrated direct optical parametric generation (OPG) as well as optical parametric oscillation (OPO).

Review on the dynamics of semiconductor nanowire lasers

Science.gov (United States)

Röder, Robert; Ronning, Carsten

2018-03-01

Semiconductor optoelectronic devices have contributed tremendously to the technological progress in the past 50-60 years. Today, they also play a key role in nanophotonics stimulated by the inherent limitations of electronic integrated circuits and the growing demand for faster communications on chip. In particular, the field of ‘nanowire photonics’ has emerged including the search for coherent light sources with a nano-scaled footprint. The past decade has been dedicated to find suitable semiconductor nanowire (NW) materials for such nanolasers. Nowadays, such NW lasers consistently work at room temperature covering a huge spectral range from the ultraviolet down to the mid-infrared depending on the band gap of the NW material. Furthermore, first approaches towards the modification and optimization of such NW laser devices have been demonstrated. The underlying dynamics of the electronic and photonic NW systems have also been studied very recently, as they need to be understood in order to push the technological relevance of nano-scaled coherent light sources. Therefore, this review will first present novel measurement approaches in order to study the ultrafast temporal and optical mode dynamics of individual NW laser devices. Furthermore, these fundamental new insights are reviewed and deeply discussed towards the efficient control and adjustment of the dynamics in semiconductor NW lasers.

Infrared laser spectroscopic trace gas sensing

Science.gov (United States)

Sigrist, Markus

2016-04-01

Chemical sensing and analyses of gas samples by laser spectroscopic methods are attractive owing to several advantages such as high sensitivity and specificity, large dynamic range, multi-component capability, and lack of pretreatment or preconcentration procedures. The preferred wavelength range comprises the fundamental molecular absorption range in the mid-infared between 3 and 15 μm, whereas the near-infrared range covers the (10-100 times weaker) higher harmonics and combination bands. The availability of near-infrared and, particularly, of broadly tunable mid-infrared sources like external cavity quantum cascade lasers (EC-QCLs), interband cascade lasers (ICLs), difference frequency generation (DFG), optical parametric oscillators (OPOs), recent developments of diode-pumped lead salt semiconductor lasers, of supercontinuum sources or of frequency combs have eased the implementation of laser-based sensing devices. Sensitive techniques for molecular absorption measurements include multipass absorption, various configurations of cavity-enhanced techniques such as cavity ringdown (CRD), or of photoacoustic spectroscopy (PAS) including quartz-enhanced (QEPAS) or cantilever-enhanced (CEPAS) techniques. The application requirements finally determine the optimum selection of laser source and detection scheme. In this tutorial talk I shall discuss the basic principles, present various experimental setups and illustrate the performance of selected systems for chemical sensing of selected key atmospheric species. Applications include an early example of continuous vehicle emission measurements with a mobile CO2-laser PAS system [1]. The fast analysis of C1-C4 alkanes at sub-ppm concentrations in gas mixtures is of great interest for the petrochemical industry and was recently achieved with a new type of mid-infrared diode-pumped piezoelectrically tuned lead salt vertical external cavity surface emitting laser (VECSEL) [2]. Another example concerns measurements on short

IV-VI mid-infrared VECSEL on Si-substrate

Science.gov (United States)

Fill, M.; Felder, F.; Rahim, M.; Khiar, A.; Rodriguez, R.; Zogg, H.; Ishida, A.

2012-03-01

Optically pumped VECSEL (vertical external cavity surface emitting lasers) based on IV-VI semiconductors grown on Si cover the entire wavelength range between 3.0 and 10 μm. Thanks to their simple structure and large wavelength coverage they are an interesting alternative laser technology to access the mid-infrared wavelength region. The active layers consist either of homogeneous "bulk" layers, double heterostructures or quantum well structures of the PbSe, PbTe or PbS material system. Maximum operation temperatures of 325 K are achieved with output powers above 200 mWp. Further, continuously tunable VECSEL are presented, emitting between 3.2 and 5.4 μm. The single emission mode is continuously tunable over 50-100 nm around the center wavelength, yielding an output power > 10 mWp. The axial symmetric emission beam has a half divergence angle of < 3.3°.

Fabrication of Shatter-Proof Metal Hollow-Core Optical Fibers for Endoscopic Mid-Infrared Laser Applications

Directory of Open Access Journals (Sweden)

Katsumasa Iwai

2018-04-01

Full Text Available A method for fabricating robust and thin hollow-core optical fibers that carry mid-infrared light is proposed for use in endoscopic laser applications. The fiber is made of stainless steel tubing, eliminating the risk of scattering small glass fragments inside the body if the fiber breaks. To reduce the inner surface roughness of the tubing, a polymer base layer is formed prior to depositing silver and optical-polymer layers that confine light inside the hollow core. The surface roughness is greatly decreased by re-coating thin polymer base layers. Because of this smooth base layer surface, a uniform optical-polymer film can be formed around the core. As a result, clear interference peaks are observed in both the visible and mid-infrared regions. Transmission losses were also low for the carbon dioxide laser used for medical treatments as well as the visible laser diode used for an aiming beam. Measurements of bending losses for these lasers demonstrate the feasibility of the designed fiber for endoscopic applications.

Black phosphorus saturable absorber for a diode-pumped passively Q-switched Er:CaF2 mid-infrared laser

Science.gov (United States)

Li, Chun; Liu, Jie; Guo, Zhinan; Zhang, Han; Ma, Weiwei; Wang, Jingya; Xu, Xiaodong; Su, Liangbi

2018-01-01

A multilayer black phosphorus, as a novel two dimensional saturable absorber, has superb saturable absorption properties for a Er:CaF2 solid-state pulse laser. The pulse laser is realized at mid-infrared region with the passively Q-switched technology by a diode-pumping. The high-quality black phosphorus saturable absorber is fabricated by liquid phase exfoliation method. The pulse laser generates the pulses operation with the pulse duration of 954.8 ns, the repetition rate of 41.93 kHz, the pulse energy of 4.25 μJ and the peak power of 4.45 W. Our work demonstrates that black phosphorus could be used as a kind of efficient mid-infrared region optical absorber for ultrafast photonics.

Injection-seeded tunable mid-infrared pulses generated by difference frequency mixing

Science.gov (United States)

Miyamoto, Yuki; Hara, Hideaki; Masuda, Takahiko; Hiraki, Takahiro; Sasao, Noboru; Uetake, Satoshi

2017-03-01

We report on the generation of nanosecond mid-infrared pulses having frequency tunability, a narrow linewidth, and a high pulse energy. These pulses are obtained by frequency mixing between injection-seeded near-infrared pulses in potassium titanyl arsenate crystals. A continuous-wave external cavity laser diode or a Ti:sapphire ring laser is used as a tunable seeding source for the near-infrared pulses. The typical energy of the generated mid-infrared pulses is in the range of 0.4-1 mJ/pulse. The tuning wavelength ranges from 3142 to 4806 nm. A narrow linewidth of 1.4 GHz and good frequency reproducibility of the mid-infrared pulses are confirmed by observing a rovibrational absorption line of gaseous carbon monoxide at 4587 nm.

Picosecond mid-infrared amplifier for high average power.

CSIR Research Space (South Africa)

Botha, LR

2007-04-01

Full Text Available High pressure CO2 lasers are good candidates for amplifying picosecond mid infrared pulses. High pressure CO2 lasers are notorious for being unreliable and difficult to operate. In this paper a high pressure CO2 laser is presented based on well...

Indirect absorption spectroscopy using quantum cascade lasers: mid-infrared refractometry and photothermal spectroscopy.

Science.gov (United States)

Pfeifer, Marcel; Ruf, Alexander; Fischer, Peer

2013-11-04

We record vibrational spectra with two indirect schemes that depend on the real part of the index of refraction: mid-infrared refractometry and photothermal spectroscopy. In the former, a quantum cascade laser (QCL) spot is imaged to determine the angles of total internal reflection, which yields the absorption line via a beam profile analysis. In the photothermal measurements, a tunable QCL excites vibrational resonances of a molecular monolayer, which heats the surrounding medium and changes its refractive index. This is observed with a probe laser in the visible. Sub-monolayer sensitivities are demonstrated.

Research on propane leak detection system and device based on mid infrared laser

Science.gov (United States)

Jiang, Meng; Wang, Xuefeng; Wang, Junlong; Wang, Yizhao; Li, Pan; Feng, Qiaoling

2017-10-01

Propane is a key component of liquefied petroleum gas (LPG) and crude oil volatile. This issue summarizes the recent progress of propane detection technology. Meanwhile, base on the development trend, our latest progress is also provided. We demonstrated a mid infrared propane sensor system, which is based on wavelength modulation spectroscopy (WMS) technique with a CW interband cascade laser (ICL) emitting at 3370.4nm. The ICL laser scanned over a sharp feature in the broader spectrum of propane, and harmonic signals are obtained by lock-in amplifier for gas concentration deduction. The surrounding gas is extracted into the fine optical absorption cell through the pump to realize online detection. The absorption cell is designed in mid infrared windows range. An example experimental setup is shown. The second harmonic signals 2f and first harmonic signals1f are obtained. We present the sensor performance test data including dynamic precision and temperature stability. The propane detection sensor system and device is portable can carried on the mobile inspection vehicle platforms or intelligent robot inspection platform to realize the leakage monitoring of whole oil gas tank area.

Mid-infrared, long wave infrared (4-12 μm) molecular emission signatures from pharmaceuticals using laser-induced breakdown spectroscopy (LIBS).

Science.gov (United States)

Yang, Clayton S-C; Brown, Ei E; Kumi-Barimah, Eric; Hommerich, Uwe H; Jin, Feng; Trivedi, Sudhir B; Samuels, Alan C; Snyder, A Peter

2014-01-01

In an effort to augment the atomic emission spectra of conventional laser-induced breakdown spectroscopy (LIBS) and to provide an increase in selectivity, mid-wave to long-wave infrared (IR), LIBS studies were performed on several organic pharmaceuticals. Laser-induced breakdown spectroscopy signature molecular emissions of target organic compounds are observed for the first time in the IR fingerprint spectral region between 4-12 μm. The IR emission spectra of select organic pharmaceuticals closely correlate with their respective standard Fourier transform infrared spectra. Intact and/or fragment sample molecular species evidently survive the LIBS event. The combination of atomic emission signatures derived from conventional ultraviolet-visible-near-infrared LIBS with fingerprints of intact molecular entities determined from IR LIBS promises to be a powerful tool for chemical detection.

Kinetic and diagnostic studies of molecular plasmas using laser absorption techniques

NARCIS (Netherlands)

Welzel, S.; Rousseau, A.; Davies, P.B.; Röpcke, J.

2007-01-01

Within the last decade mid infrared absorption spectroscopy between 3 and 20 µm, known as Infrared Laser Absorption Spectroscopy (IRLAS) and based on tuneable semiconductor lasers, namely lead salt diode lasers, often called tuneable diode lasers (TDL), and quantum cascade lasers (QCL) has

CO2 laser pulse switching by optically excited semiconductors

International Nuclear Information System (INIS)

Silva, V.L. da.

1986-01-01

The construction and the study of a semi-conductor optical switch used for generating short infrared pulses and to analyse the semiconductor characteristics, are presented. The switch response time depends on semiconductor and control laser characteristics. The results obtained using a Ge switch controlled by N 2 , NdYag and Dye lasers are presented. The response time was 50 ns limited by Ge recombination time. The reflectivity increased from 7% to 59% using N 2 laser to control the switch. A simple model for semiconductor optical properties that explain very well the experimental results, is also presented. (author) [pt

New Opportunities in Mid-Infrared Emission Control

Directory of Open Access Journals (Sweden)

Peter Geiser

2015-09-01

Full Text Available Tunable laser absorption spectroscopy (TLAS has been well accepted as a preferred measurement technique for many industrial applications in recent years, especially for in situ applications. Previously, mainly near-infrared lasers have been used in TLAS sensors. The advent of compact mid-infrared light sources, like quantum cascade lasers and interband cascade lasers, has made it possible to detect gases with better sensitivity by utilizing fundamental absorption bands and to measure species that do not have any absorption lines in the near-infrared spectral region. This technological advancement has allowed developing new sensors for gases, such as nitric oxide and sulfur dioxide, for industrial applications. Detection limits of better than 1 ppm·m for nitric oxide and better than 10 ppm·m for sulfur dioxide are demonstrated in field experiments.

Preferential flow pathways revealed by field based stable isotope analysis of CO2 by mid-infrared laser spectroscopy

Science.gov (United States)

van Geldern, Robert; Nowak, Martin; Zimmer, Martin; Szizybalski, Alexandra; Myrttinen, Anssi; Barth, Johannes A. C.; Jost, Hj

2016-04-01

A newly developed and commercially available isotope ratio laser spectrometer for CO2 analyses has been tested during a 10-day field monitoring campaign at the Ketzin pilot site for CO2 storage in northern Germany. The laser instrument is based on tunable laser direct absorption in the mid-infrared. The instrument recorded a continuous 10-day carbon stable isotope data set with 30 minutes resolution directly on-site in a field-based laboratory container during a tracer experiment. To test the instruments performance and accuracy the monitoring campaign was accompanied by daily CO2 sampling for laboratory analyses with isotope ratio mass spectrometry (IRMS). The carbon stable isotope ratios measured by conventional IRMS technique and by the new mid-infrared laser spectrometer agree remarkably well within 2σ analytical precision (<0.3 ‰). This proves the capability of the new mid-infrared direct absorption technique to measure high precision and accurate real-time table isotope data directly in the field. The injected CO2 tracer had a distinct δ13C value that was largely different from the reservoir background value. The laser spectroscopy data revealed a prior to this study unknown, intensive dynamic with fast changing δ13C values. The arrival pattern of the tracer suggest that the observed fluctuations were probably caused by migration along separate and distinct preferential flow paths between injection well and observation well. The new technique might contribute to a better tracing of the migration of the underground CO2 plume and help to ensure the long-term integrity of the reservoir.

Polarization effects in above-threshold ionization with a mid-infrared strong laser field

Science.gov (United States)

Kang, Hui-Peng; Xu, Song-Po; Wang, Yan-Lan; Yu, Shao-Gang; Zhao, Xiao-Yun; Hao, Xiao-Lei; Lai, Xuan-Yang; Pfeifer, Thomas; Liu, Xiao-Jun; Chen, Jing; Cheng, Ya; Xu, Zhi-Zhan

2018-05-01

Using a semiclassical approach, we theoretically study the above-threshold ionization of magnesium by intense, mid-infrared laser pulses. The formation of low-energy structures in the photoelectron spectrum is found to be enhanced by comparing with a calculation based on the single-active electron approximation. By performing electron trajectory and recollision-time distribution analysis, we demonstrate that this phenomenon is due to the laser-induced ionic core polarization effects on the recolliding electrons. We also show that the polarization effects should be experimentally detectable. Our finding provides new insight into ultrafast control of strong-field photoionization and imaging of polar molecules.

Short pulse mid-infrared amplifier for high average power

CSIR Research Space (South Africa)

Botha, LR

2006-09-01

Full Text Available High pressure CO2 lasers are good candidates for amplifying picosecond mid infrared pulses. High pressure CO2 lasers are notorious for being unreliable and difficult to operate. In this paper a high pressure CO2 laser is presented based on well...

Generation of 70-fs pulses at 286 μm from a mid-infrared fiber laser

Science.gov (United States)

Woodward, R. I.; Hudson, D. D.; Fuerbach, A.; Jackson, S. D.

2017-12-01

We propose and demonstrate a simple route to few-optical-cycle pulse generation from a mid-infrared fiber laser through nonlinear compression of pulses from a holmium-doped fiber oscillator using a short length of chalcogenide fiber and a grating pair. Pulses from the oscillator with 265-fs duration at 2.86 {\\mu}m are spectrally broadened through self-phase modulation in step-index As2S3 fiber to 141-nm bandwidth and then re-compressed to 70 fs (7.3 optical cycles). These are the shortest pulses from a mid-infrared fiber system to date, and we note that our system is compact, robust, and uses only commercially available components. The scalability of this approach is also discussed, supported by numerical modeling.

Cascade laser applications: trends and challenges

Science.gov (United States)

d'Humières, B.; Margoto, Éric; Fazilleau, Yves

2016-03-01

When analyses need rapid measurements, cost effective monitoring and miniaturization, tunable semiconductor lasers can be very good sources. Indeed, applications like on-field environmental gas analysis or in-line industrial process control are becoming available thanks to the advantage of tunable semiconductor lasers. Advances in cascade lasers (CL) are revolutionizing Mid-IR spectroscopy with two alternatives: interband cascade lasers (ICL) in the 3-6μm spectrum and quantum cascade lasers (QCL), with more power from 3 to 300μm. The market is getting mature with strong players for driving applications like industry, environment, life science or transports. CL are not the only Mid-IR laser source. In fact, a strong competition is now taking place with other technologies like: OPO, VCSEL, Solid State lasers, Gas, SC Infrared or fiber lasers. In other words, CL have to conquer a share of the Mid-IR application market. Our study is a market analysis of CL technologies and their applications. It shows that improvements of components performance, along with the progress of infrared laser spectroscopy will drive the CL market growth. We compare CL technologies with other Mid-IR sources and estimate their share in each application market.

Photoacoustic-based detector for infrared laser spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Scholz, L.; Palzer, S., E-mail: stefan.palzer@imtek.uni-freiburg.de [Department of Microsystems Engineering-IMTEK, Laboratory for Gas Sensors, University of Freiburg, Georges-Köhler-Allee 102, Freiburg 79110 (Germany)

2016-07-25

In this contribution, we present an alternative detector technology for use in direct absorption spectroscopy setups. Instead of a semiconductor based detector, we use the photoacoustic effect to gauge the light intensity. To this end, the target gas species is hermetically sealed under excess pressure inside a miniature cell along with a MEMS microphone. Optical access to the cell is provided by a quartz window. The approach is particularly suitable for tunable diode laser spectroscopy in the mid-infrared range, where numerous molecules exhibit large absorption cross sections. Moreover, a frequency standard is integrated into the method since the number density and pressure inside the cell are constant. We demonstrate that the information extracted by our method is at least equivalent to that achieved using a semiconductor-based photon detector. As exemplary and highly relevant target gas, we have performed direct spectroscopy of methane at the R3-line of the 2v{sub 3} band at 6046.95 cm{sup −1} using both detector technologies in parallel. The results may be transferred to other infrared-active transitions without loss of generality.

Near infrared laser stimulation of human neural stem cells into neurons on graphene nanomesh semiconductors.

Science.gov (United States)

Akhavan, Omid; Ghaderi, Elham; Shirazian, Soheil A

2015-02-01

Reduced graphene oxide nanomeshes (rGONMs), as p-type semiconductors with band-gap energy of ∼ 1 eV, were developed and applied in near infrared (NIR) laser stimulation of human neural stem cells (hNSCs) into neurons. The biocompatibility of the rGONMs in growth of hNSCs was found similar to that of the graphene oxide (GO) sheets. Proliferation of the hNSCs on the GONMs was assigned to the excess oxygen functional groups formed on edge defects of the GONMs, resulting in superhydrophilicity of the surface. Under NIR laser stimulation, the graphene layers (especially the rGONMs) exhibited significant cell differentiations, including more elongations of the cells and higher differentiation of neurons than glia. The higher hNSC differentiation on the rGONM than the reduced GO (rGO) was assigned to the stimulation effects of the low-energy photoexcited electrons injected from the rGONM semiconductors into the cells, while the high-energy photoelectrons of the rGO (as a zero band-gap semiconductor) could suppress the cell proliferation and/or even cause cell damages. Using conventional heating of the culture media up to ∼ 43 °C (the temperature typically reached under the laser irradiation), no significant differentiation was observed in dark. This further confirmed the role of photoelectrons in the hNSC differentiation. Copyright © 2014 Elsevier B.V. All rights reserved.

Active mode-locking of mid-infrared quantum cascade lasers with short gain recovery time.

Science.gov (United States)

Wang, Yongrui; Belyanin, Alexey

2015-02-23

We investigate the dynamics of actively modulated mid-infrared quantum cascade lasers (QCLs) using space- and time-domain simulations of coupled density matrix and Maxwell equations with resonant tunneling current taken into account. We show that it is possible to achieve active mode locking and stable generation of picosecond pulses in high performance QCLs with a vertical laser transition and a short gain recovery time by bias modulation of a short section of a monolithic Fabry-Perot cavity. In fact, active mode locking in QCLs with a short gain recovery time turns out to be more robust to the variation of parameters as compared to previously studied lasers with a long gain recovery time. We investigate the effects of spatial hole burning and phase locking on the laser output.

Continuously tunable monomode mid-infrared vertical external cavity surface emitting laser on Si

Science.gov (United States)

Khiar, A.; Rahim, M.; Fill, M.; Felder, F.; Hobrecker, F.; Zogg, H.

2010-10-01

A tunable PbTe based mid-infrared vertical external cavity surface emitting laser is described. The active part is a ˜1 μm thick PbTe layer grown epitaxially on a Bragg mirror on the Si-substrate. The cavity is terminated with a curved Si/SiO Bragg top mirror and pumped optically with a 1.55 μm laser. Cavity length is <100 μm in order that only one longitudinal mode is supported. By changing the cavity length, up to 5% wavelength continuous and mode-hop free tuning is achieved at fixed temperature. The total tuning extends from 5.6 to 4.7 μm at 100-170 K operation temperature.

Towards supercontinuum-driven hyperspectral microscopy in the mid-infrared

DEFF Research Database (Denmark)

Lindsay, I. D.; Valle, S.; Ward, J.

2016-01-01

The extension of supercontinuum (SC) sources into the mid-infrared, via the use of fluoride and chalcogenide optical fibers, potentially offers the high radiance of a laser combined with spectral coverage far exceeding that of typical tunable lasers and comparable to traditional black-body emitte...

Semiconductor optoelectronic infrared spectroscopy

International Nuclear Information System (INIS)

Hollingworth, A.R.

2001-08-01

We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

Mid-infrared-to-mid-ultraviolet supercontinuum enhanced by third-to-fifteenth odd harmonics.

Science.gov (United States)

Mitrofanov, A V; Voronin, A A; Mitryukovskiy, S I; Sidorov-Biryukov, D A; Pugžlys, A; Andriukaitis, G; Flöry, T; Stepanov, E A; Fedotov, A B; Baltuška, A; Zheltikov, A M

2015-05-01

A high-energy supercontinuum spanning 4.7 octaves, from 250 to 6500 nm, is generated using a 0.3-TW, 3.9-μm output of a mid-infrared optical parametric chirped-pulse amplifier as a driver inducing a laser filament in the air. The high-frequency wing of the supercontinuum spectrum is enhanced by odd-order optical harmonics of the mid-infrared driver. Optical harmonics up to the 15th order are observed in supercontinuum spectra as overlapping, yet well-resolved peaks broadened, as verified by numerical modeling, due to spatially nonuniform ionization-induced blue shift.

Broadband integrated mid infrared light sources as enabling technology for point of care mid-infrared spectroscopy

Science.gov (United States)

2017-08-20

AFRL-AFOSR-JP-TR-2017-0061 Broadband integrated mid-infrared light sources as enabling technology for point-of-care mid- infrared spectroscopy Alex...mid-infrared light sources as enabling technology for point-of-care mid-infrared spectroscopy 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-16-1-4037...Broadband integrated mid-infrared light sources as enabling technology for point-of-care mid- infrared spectroscopy ” Date: 16th August 2017 Name

Piezo activated mode tracking system for widely tunable mode-hop-free external cavity mid-IR semiconductor lasers

Science.gov (United States)

Wysocki, Gerard (Inventor); Tittel, Frank K. (Inventor); Curl, Robert F. (Inventor)

2010-01-01

A widely tunable, mode-hop-free semiconductor laser operating in the mid-IR comprises a QCL laser chip having an effective QCL cavity length, a diffraction grating defining a grating angle and an external cavity length with respect to said chip, and means for controlling the QCL cavity length, the external cavity length, and the grating angle. The laser of claim 1 wherein said chip may be tuned over a range of frequencies even in the absence of an anti-reflective coating. The diffraction grating is controllably pivotable and translatable relative to said chip and the effective QCL cavity length can be adjusted by varying the injection current to the chip. The laser can be used for high resolution spectroscopic applications and multi species trace-gas detection. Mode-hopping is avoided by controlling the effective QCL cavity length, the external cavity length, and the grating angle so as to replicate a virtual pivot point.

Mid-Infrared Tunable Resonant Cavity Enhanced Detectors

Directory of Open Access Journals (Sweden)

Hans Zogg

2008-09-01

Full Text Available Mid-infrared detectors that are sensitive only in a tunable narrow spectral band are presented. They are based on the Resonant Cavity Enhanced Detector (RCED principle and employing a thin active region using IV-VI narrow gap semiconductor layers. A Fabry-Pérot cavity is formed by two mirrors. The active layer is grown onto one mirror, while the second mirror can be displaced. This changes the cavity length thus shifting the resonances where the detector is sensitive. Using electrostatically actuated MEMS micromirrors, a very compact tunable detector system has been fabricated. Mirror movements of more than 3 μm at 30V are obtained. With these mirrors, detectors with a wavelength tuning range of about 0.7 μm have been realized. Single detectors can be used in mid-infrared micro spectrometers, while a detector arrangement in an array makes it possible to realize Adaptive Focal Plane Arrays (AFPA.

Energy levels and far-infrared optical absorption of impurity doped semiconductor nanorings: Intense laser and electric fields effects

Energy Technology Data Exchange (ETDEWEB)

Barseghyan, M.G., E-mail: mbarsegh@ysu.am

2016-11-10

Highlights: • The electron-impurity interaction on energy levels in nanoring have been investigated. • The electron-impurity interaction on far-infrared absorption have been investigated. • The energy levels are more stable for higher values of electric field. - Abstract: The effects of electron-impurity interaction on energy levels and far-infrared absorption in semiconductor nanoring under the action of intense laser and lateral electric fields have been investigated. Numerical calculations are performed using exact diagonalization technique. It is found that the electron-impurity interaction and external fields change the energy spectrum dramatically, and also have significant influence on the absorption spectrum. Strong dependence on laser field intensity and electric field of lowest energy levels, also supported by the Coulomb interaction with impurity, is clearly revealed.

Third harmonic generation of high power far infrared radiation in semiconductors

Energy Technology Data Exchange (ETDEWEB)

Urban, M [Ecole Polytechnique Federale, Lausanne (Switzerland). Centre de Recherche en Physique des Plasma (CRPP)

1996-04-01

We investigated the third harmonic generation of high power infrared radiation in doped semiconductors with emphasis on the conversion efficiency. The third harmonic generation effect is based on the nonlinear response of the conduction band electrons in the semiconductor with respect to the electric field of the incident electromagnetic wave. Because this work is directed towards a proposed application in fusion plasma diagnostics, the experimental requirements for the radiation source at the fundamental frequency are roughly given as follows: a wavelength of the radiation at the fundamental frequency in the order of 1 mm and an incident power greater than 1 MW. The most important experiments of this work were performed using the high power far infrared laser of the CRPP. With this laser a new laser line was discovered, which fits exactly the source specifications given above: the wavelength is 676 {mu}m and the maximum power is up to 2 MW. Additional experiments were carried out using a 496 {mu}m laser and a 140 GHz (2.1 mm) gyrotron. The main experimental progress with respect to previous work in this field is, in addition to the use of a very high power laser, the possibility of an absolute calibration of the detectors for the far infrared radiation and the availability of a new type of detector with a very fast response. This detector made it possible to measure the power at the fundamental as well as the third harmonic frequency with full temporal resolution of the fluctuations during the laser pulse. Therefore the power dependence of the third harmonic generation efficiency could be measured directly. The materials investigated were InSb as an example of a narrow gap semiconductor and Si as standard material. The main results are: narrow gap semiconductors indeed have a highly nonlinear electronic response, but the narrow band gap leads at the same time to a low power threshold for internal breakdown, which is due to impact ionization. figs., tabs., refs.

Third harmonic generation of high power far infrared radiation in semiconductors

International Nuclear Information System (INIS)

Urban, M.

1996-04-01

In this work we investigated the third harmonic generation of high power infrared radiation in doped semiconductors with emphasis on the conversion efficiency. The third harmonic generation effect is based on the nonlinear response of the conduction band electrons in the semiconductor with respect to the electric field of the incident electromagnetic wave. Because this work is directed towards a proposed application in fusion plasma diagnostics, the experimental requirements for the radiation source at the fundamental frequency are roughly given as follows: a wavelength of the radiation at the fundamental frequency in the order of 1 mm and an incident power greater than 1 MW. The most important experiments of this work were performed using the high power far infrared laser of the CRPP. With this laser a new laser line was discovered, which fits exactly the source specifications given above: the wavelength is 676 μm and the maximum power is up to 2 MW. Additional experiments were carried out using a 496 μm laser and a 140 GHz (2.1 mm) gyrotron. The main experimental progress with respect to previous work in this field is, in addition to the use of a very high power laser, the possibility of an absolute calibration of the detectors for the far infrared radiation and the availability of a new type of detector with a very fast response. This detector made it possible to measure the power at the fundamental as well as the third harmonic frequency with full temporal resolution of the fluctuations during the laser pulse. Therefore the power dependence of the third harmonic generation efficiency could be measured directly. The materials investigated were InSb as an example of a narrow gap semiconductor and Si as standard material. The main results are: narrow gap semiconductors indeed have a highly nonlinear electronic response, but the narrow band gap leads at the same time to a low power threshold for internal breakdown, which is due to impact ionization. (author) figs

Teradiode's high brightness semiconductor lasers

Science.gov (United States)

Huang, Robin K.; Chann, Bien; Burgess, James; Lochman, Bryan; Zhou, Wang; Cruz, Mike; Cook, Rob; Dugmore, Dan; Shattuck, Jeff; Tayebati, Parviz

2016-03-01

TeraDiode is manufacturing multi-kW-class ultra-high brightness fiber-coupled direct diode lasers for industrial applications. A fiber-coupled direct diode laser with a power level of 4,680 W from a 100 μm core diameter, BPP) of 3.5 mm-mrad and is the lowest BPP multi-kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 4-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers. We have also demonstrated novel high peak power lasers and high brightness Mid-Infrared Lasers.

Mid-infrared lasers for energy frontier plasma accelerators

Directory of Open Access Journals (Sweden)

I. V. Pogorelsky

2016-09-01

Full Text Available Plasma wake field accelerators driven with solid-state near-IR lasers have been considered as an alternative to conventional rf accelerators for next-generation TeV-class lepton colliders. Here, we extend this study to the mid-IR spectral domain covered by CO_{2} lasers. We conclude that the increase in the laser driver wavelength favors the regime of laser wake field acceleration with a low plasma density and high electric charge. This regime is the most beneficial for gamma colliders to be converted from lepton colliders via inverse Compton scattering. Selecting a laser wavelength to drive a Compton gamma source is essential for the design of such a machine. The revealed benefits from spectral diversification of laser drivers for future colliders and off-spring applications validate ongoing efforts in advancing the ultrafast CO_{2} laser technology.

Semiconductor laser shearing interferometer

International Nuclear Information System (INIS)

Ming Hai; Li Ming; Chen Nong; Xie Jiaping

1988-03-01

The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector.

Science.gov (United States)

Lim, Geunsik; Manzur, Tariq; Kar, Aravinda

2011-06-10

An uncooled mid-wave infrared (MWIR) detector is developed by doping an n-type 4H-SiC with Ga using a laser doping technique. 4H-SiC is one of the polytypes of crystalline silicon carbide and a wide bandgap semiconductor. The dopant creates an energy level of 0.30  eV, which was confirmed by optical spectroscopy of the doped sample. This energy level corresponds to the MWIR wavelength of 4.21  μm. The detection mechanism is based on the photoexcitation of electrons by the photons of this wavelength absorbed in the semiconductor. This process modifies the electron density, which changes the refractive index, and, therefore, the reflectance of the semiconductor is also changed. The change in the reflectance, which is the optical response of the detector, can be measured remotely with a laser beam, such as a He-Ne laser. This capability of measuring the detector response remotely makes it a wireless detector. The variation of refractive index was calculated as a function of absorbed irradiance based on the reflectance data for the as-received and doped samples. A distinct change was observed for the refractive index of the doped sample, indicating that the detector is suitable for applications at the 4.21  μm wavelength.

Fugitive methane leak detection using mid-infrared hollow-core photonic crystal fiber containing ultrafast laser drilled side-holes

Science.gov (United States)

Karp, Jason; Challener, William; Kasten, Matthias; Choudhury, Niloy; Palit, Sabarni; Pickrell, Gary; Homa, Daniel; Floyd, Adam; Cheng, Yujie; Yu, Fei; Knight, Jonathan

2016-05-01

The increase in domestic natural gas production has brought attention to the environmental impacts of persistent gas leakages. The desire to identify fugitive gas emission, specifically for methane, presents new sensing challenges within the production and distribution supply chain. A spectroscopic gas sensing solution would ideally combine a long optical path length for high sensitivity and distributed detection over large areas. Specialty micro-structured fiber with a hollow core can exhibit a relatively low attenuation at mid-infrared wavelengths where methane has strong absorption lines. Methane diffusion into the hollow core is enabled by machining side-holes along the fiber length through ultrafast laser drilling methods. The complete system provides hundreds of meters of optical path for routing along well pads and pipelines while being interrogated by a single laser and detector. This work will present transmission and methane detection capabilities of mid-infrared photonic crystal fibers. Side-hole drilling techniques for methane diffusion will be highlighted as a means to convert hollow-core fibers into applicable gas sensors.

Fiber-delivered mid-infrared (6-7) laser ablation of retinal tissue under perfluorodecalin

Science.gov (United States)

Mackanos, Mark A.; Joos, Karen M.; Jansen, E. Duco

2003-07-01

The Er:YAG laser (l=2.94mm) is an effective tool in vitreo-retinal surgery. Pulsed mid-infrared (l=6.45 mm) radiation from the Free Electron Laser has been touted as a potentially superior cutting tool. To date, use of this laser has been limited to applications in an air environment. The goal of this study was: 1) determine feasibility of fiberoptic delivery of 6.45mm using silverhalide fibers (d=700mm); 2) use infrared transparent vitreous substitute (perfluorodecalin) to allow non-contact ablation of the retina at 6.45mm. Fiber damage threshold=7.8J/cm2 (0.54GW/cm2) while transmission loss=0.54dB/m, allowing supra-ablative radiant exposures to the target. FTIR measurements of perfluorodecalin at 6.45mm yielded ma=3mm-1. Pump-probe imaging of ablation of a tissue-phantom through perfluorodecalin showed feasibility of non-contact ablation at l=6.45mm. Ablation of the retinal membranes of enucleated pig eyes was carried out under perfluorodecalin (5 Hz, 1.3 J/cm2). Each eye was cut along its equator to expose the retina. Vitreous was replaced by perfluorodecalin and laser radiation was delivered to the retina via the silverhalide fiber. The eye was rotated (at 2 rpm) using a stepper motor (0.9o/step) to create an ablation circle around the central axis of the retina (50% spot-to-spot overlap). Histological analysis of ablation yield and collateral damage will be presented. We have shown that using l=6.45mm delivered via silver halide fibers through perfluorodecalin allowed non-contact laser ablation. Remote structures are shielded, as the radiant exposure falls below the ablation threshold owing non-negligible absorption of perfluorodecalin at 6.45mm. This may optimize efficacy and safety of laser-based vitreoretinal surgery.

Analysis of energy transfer process based emission spectra of erbium doped germanate glasses for mid-infrared laser materials

International Nuclear Information System (INIS)

Cai, Muzhi; Wei, Tao; Zhou, Beier; Tian, Ying; Zhou, Jiajia; Xu, Shiqing; Zhang, Junjie

2015-01-01

Highlights: • Er 3+ doped germanate glass with good thermal stability were prepared. • Ionic boding nature was proved by bonding parameter calculation. • Mid-infrared fluorescent behaviors and energy transfer were investigated. • Rate equation and Dexter’s theory were utilized to elucidate 2.7 μm emission. - Abstract: Er 3+ activated germanate glass with good thermal stability was prepared. Bonding parameters have been calculated and the nature of ionic bonding of the germanate glass has been determined. Mid-infrared fluorescence was observed and corresponding radiative properties were investigated. For Er 3+ : 4 I 11/2 → 4 I 13/2 transition, high spontaneous radiative transition probability (30.09 s −1 ), large emission cross section ((14.84 ± 0.10) × 10 −21 cm 2 ) and superior gain performance were obtained from the prepared glass. Besides, energy transfer processes concerning the 2.7 μm emission were also discussed in detail. According to simplified rate equation and Dexter’s theory, energy transfer microscopic parameters were computed to elucidate observed 2.7 μm emissions. Results demonstrate that the prepared germanate glass possessing excellent spectroscopic properties might be an attractive candidate for mid-infrared laser or amplifier

Towards the mid-infrared optical biopsy

DEFF Research Database (Denmark)

Seddon, Angela B.; Benson, Trevor M.; Sujecki, Slawomir

2016-01-01

We are establishing a new paradigm in mid-infrared molecular sensing, mapping and imaging to open up the mid-infrared spectral region for in vivo (i.e. in person) medical diagnostics and surgery. Thus, we are working towards the mid-infrared optical biopsy ('opsy' look at, bio the biology) in situ...... in the body for real-time diagnosis. This new paradigm will be enabled through focused development of devices and systems which are robust, functionally designed, safe, compact and cost effective and are based on active and passive mid-infrared optical fibers. In particular, this will enable early diagnosis...... of a bright mid-infrared wideband source in a portable package as a first step for medical fiber-based systems operating in the mid-infrared. Moreover, mid-infrared molecular mapping and imaging is potentially a disruptive technology to give improved monitoring of the environment, energy efficiency, security...

Compact semiconductor lasers

CERN Document Server

Yu, Siyuan; Lourtioz, Jean-Michel

2014-01-01

This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

Versatile silicon-waveguide supercontinuum for coherent mid-infrared spectroscopy

Science.gov (United States)

Nader, Nima; Maser, Daniel L.; Cruz, Flavio C.; Kowligy, Abijith; Timmers, Henry; Chiles, Jeff; Fredrick, Connor; Westly, Daron A.; Nam, Sae Woo; Mirin, Richard P.; Shainline, Jeffrey M.; Diddams, Scott

2018-03-01

Laser frequency combs, with their unique combination of precisely defined spectral lines and broad bandwidth, are a powerful tool for basic and applied spectroscopy. Here, we report offset-free, mid-infrared frequency combs and dual-comb spectroscopy through supercontinuum generation in silicon-on-sapphire waveguides. We leverage robust fabrication and geometrical dispersion engineering of nanophotonic waveguides for multi-band, coherent frequency combs spanning 70 THz in the mid-infrared (2.5 μm-6.2 μm). Precise waveguide fabrication provides significant spectral broadening with engineered spectra targeted at specific mid-infrared bands. We characterize the relative-intensity-noise of different bands and show that the measured levels do not pose any limitation for spectroscopy applications. Additionally, we use the fabricated photonic devices to demonstrate dual-comb spectroscopy of a carbonyl sulfide gas sample at 5 μm. This work forms the technological basis for applications such as point sensors for fundamental spectroscopy, atmospheric chemistry, trace and hazardous gas detection, and biological microscopy.

Versatile silicon-waveguide supercontinuum for coherent mid-infrared spectroscopy

Directory of Open Access Journals (Sweden)

Nima Nader

2018-03-01

Full Text Available Laser frequency combs, with their unique combination of precisely defined spectral lines and broad bandwidth, are a powerful tool for basic and applied spectroscopy. Here, we report offset-free, mid-infrared frequency combs and dual-comb spectroscopy through supercontinuum generation in silicon-on-sapphire waveguides. We leverage robust fabrication and geometrical dispersion engineering of nanophotonic waveguides for multi-band, coherent frequency combs spanning 70 THz in the mid-infrared (2.5 μm–6.2 μm. Precise waveguide fabrication provides significant spectral broadening with engineered spectra targeted at specific mid-infrared bands. We characterize the relative-intensity-noise of different bands and show that the measured levels do not pose any limitation for spectroscopy applications. Additionally, we use the fabricated photonic devices to demonstrate dual-comb spectroscopy of a carbonyl sulfide gas sample at 5 μm. This work forms the technological basis for applications such as point sensors for fundamental spectroscopy, atmospheric chemistry, trace and hazardous gas detection, and biological microscopy.

Dual-comb spectroscopy of water vapor with a free-running semiconductor disk laser.

Science.gov (United States)

Link, S M; Maas, D J H C; Waldburger, D; Keller, U

2017-06-16

Dual-comb spectroscopy offers the potential for high accuracy combined with fast data acquisition. Applications are often limited, however, by the complexity of optical comb systems. Here we present dual-comb spectroscopy of water vapor using a substantially simplified single-laser system. Very good spectroscopy measurements with fast sampling rates are achieved with a free-running dual-comb mode-locked semiconductor disk laser. The absolute stability of the optical comb modes is characterized both for free-running operation and with simple microwave stabilization. This approach drastically reduces the complexity for dual-comb spectroscopy. Band-gap engineering to tune the center wavelength from the ultraviolet to the mid-infrared could optimize frequency combs for specific gas targets, further enabling dual-comb spectroscopy for a wider range of industrial applications. Copyright © 2017, American Association for the Advancement of Science.

Semiconductor lasers stability, instability and chaos

CERN Document Server

Ohtsubo, Junji

2017-01-01

This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

An experimental study of noise in mid-infrared quantum cascade lasers of different designs

Science.gov (United States)

Schilt, Stéphane; Tombez, Lionel; Tardy, Camille; Bismuto, Alfredo; Blaser, Stéphane; Maulini, Richard; Terazzi, Romain; Rochat, Michel; Südmeyer, Thomas

2015-04-01

We present an experimental study of noise in mid-infrared quantum cascade lasers (QCLs) of different designs. By quantifying the high degree of correlation occurring between fluctuations of the optical frequency and voltage between the QCL terminals, we show that electrical noise is a powerful and simple mean to study noise in QCLs. Based on this outcome, we investigated the electrical noise in a large set of 22 QCLs emitting in the range of 7.6-8 μm and consisting of both ridge-waveguide and buried-heterostructure (BH) lasers with different geometrical designs and operation parameters. From a statistical data processing based on an analysis of variance, we assessed that ridge-waveguide lasers have a lower noise than BH lasers. Our physical interpretation is that additional current leakages or spare injection channels occur at the interface between the active region and the lateral insulator in the BH geometry, which induces some extra noise. In addition, Schottky-type contacts occurring at the interface between the n-doped regions and the lateral insulator, i.e., iron-doped InP, are also believed to be a potential source of additional noise in some BH lasers, as observed from the slight reduction in the integrated voltage noise observed at the laser threshold in several BH-QCLs.

Analysis of energy transfer process based emission spectra of erbium doped germanate glasses for mid-infrared laser materials

Energy Technology Data Exchange (ETDEWEB)

Cai, Muzhi; Wei, Tao; Zhou, Beier; Tian, Ying; Zhou, Jiajia; Xu, Shiqing, E-mail: shiqingxu@cjlu.edu.cn; Zhang, Junjie, E-mail: jjzhang@cjlu.edu.cn

2015-03-25

Highlights: • Er{sup 3+} doped germanate glass with good thermal stability were prepared. • Ionic boding nature was proved by bonding parameter calculation. • Mid-infrared fluorescent behaviors and energy transfer were investigated. • Rate equation and Dexter’s theory were utilized to elucidate 2.7 μm emission. - Abstract: Er{sup 3+} activated germanate glass with good thermal stability was prepared. Bonding parameters have been calculated and the nature of ionic bonding of the germanate glass has been determined. Mid-infrared fluorescence was observed and corresponding radiative properties were investigated. For Er{sup 3+}:{sup 4}I{sub 11/2}→{sup 4}I{sub 13/2} transition, high spontaneous radiative transition probability (30.09 s{sup −1}), large emission cross section ((14.84 ± 0.10) × 10{sup −21} cm{sup 2}) and superior gain performance were obtained from the prepared glass. Besides, energy transfer processes concerning the 2.7 μm emission were also discussed in detail. According to simplified rate equation and Dexter’s theory, energy transfer microscopic parameters were computed to elucidate observed 2.7 μm emissions. Results demonstrate that the prepared germanate glass possessing excellent spectroscopic properties might be an attractive candidate for mid-infrared laser or amplifier.

Generation of Mid-Infrared Frequency Combs for Spectroscopic Applications

Science.gov (United States)

Maser, Daniel L.

Mid-infrared laser sources prove to be a valuable tool in exploring a vast array of phenomena, finding their way into applications ranging from trace gas detection to X-ray generation and carbon dating. Mid-infrared frequency combs, in particular, are well-suited for many of these applications, owing to their inherent low-noise and broadband nature. Frequency comb technology is well-developed in the near-infrared as a result of immense technological development by the telecommunication industry in silica fiber and the existence of readily-available glass dopants such as ytterbium and erbium that enable oscillators at 1 and 1.5 ?m. However, options become substantially more limited at longer wavelengths, as silica is no longer transparent and the components required in a mid-infrared frequency comb system (oscillators, fibers, and both fiber and free-space components) are far less technologically mature. This thesis explores several different approaches to generating frequency comb sources in the mid-infrared region, and the development of sources used in the nonlinear processes implemented to reach these wavelengths. An optical parametric oscillator, two approaches to difference frequency generation, and nonlinear spectral broadening in chip-scale waveguides are developed, characterized, and spectroscopic potential for these techniques is demonstrated. The source used for these nonlinear processes, the erbium-doped fiber amplifier, is also studied and discussed throughout the design and optimization process. The nonlinear optical processes critical to this work are numerically modeled and used to confirm and predict experimental behavior.

Highly-efficient mid-infrared CW laser operation in a lightly-doped 3 at.% Er:SrF2 single crystal.

Science.gov (United States)

Su, Liangbi; Guo, Xinsheng; Jiang, Dapeng; Wu, Qinghui; Qin, Zhipeng; Xie, Guoqiang

2018-03-05

3 at.% Er:SrF 2 laser crystals with high optical quality were successfully grown using the temperature gradient technique (TGT). The intense mid-infrared emission was observed around 2.7 μm with excitation by a 970 nm LD. Based on the Judd-Ofelt theory, the emission cross-sections of the 4 I 13/2 - 4 I 11/2 transition were calculated by using the Fuchtbauer-Ladenburg (FL) method. Efficient continuous-wave laser operation at 2.8 µm was achieved with the lightly-doped 3 at.% Er:SrF 2 crystal pumped by a 970 nm laser diode. The laser output power reached up to 1.06 W with a maximum slope efficiency of 26%.

Semiconductor Laser Measurements Laboratory

Data.gov (United States)

Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

Non-destructive testing of ceramic materials using mid-infrared ultrashort-pulse laser

Science.gov (United States)

Sun, S. C.; Qi, Hong; An, X. Y.; Ren, Y. T.; Qiao, Y. B.; Ruan, Liming M.

2018-04-01

The non-destructive testing (NDT) of ceramic materials using mid-infrared ultrashort-pulse laser is investigated in this study. The discrete ordinate method is applied to solve the transient radiative transfer equation in 2D semitransparent medium and the emerging radiative intensity on boundary serves as input for the inverse analysis. The sequential quadratic programming algorithm is employed as the inverse technique to optimize objective function, in which the gradient of objective function with respect to reconstruction parameters is calculated using the adjoint model. Two reticulated porous ceramics including partially stabilized zirconia and oxide-bonded silicon carbide are tested. The retrieval results show that the main characteristics of defects such as optical properties, geometric shapes and positions can be accurately reconstructed by the present model. The proposed technique is effective and robust in NDT of ceramics even with measurement errors.

High energy eye-safe and mid-infrared optical parametric oscillator

International Nuclear Information System (INIS)

Liu, J; Liu, Q; Huang, L; Gong, M

2010-01-01

A high energy eye-safe and mid-infrared optical parametric oscillator (OPO) is demonstrated. The nonlinear media is a Y-cut KTA crystal with the length of 20 mm, which is pumped by a Nd:YAG laser. Both eye-safe and mid-infrared laser are output with high energy. When the pump energy is 1 J and the pulse duration is 10 ns, we get 53 mJ idler at 3.632 μm and 151 mJ signal at 1.505 μm. As we know, the idler energy is the highest at the wavelength beyond 3.5 μm and the signal energy is the highest with Y-cut KTA. The results prove that the Y-cut KTA crystal can produce the signal and idler with the energies as high as these in the paper. We have tested the temperature-tuning characters and the coefficient of the idler is 0.26 nm/°C

Physics of semiconductor lasers

CERN Document Server

Mroziewicz, B; Nakwaski, W

2013-01-01

Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

Freedom from band-gap slavery: from diode lasers to quantum cascade lasers

Science.gov (United States)

Capasso, Federico

2010-02-01

Semiconductor heterostructure lasers, for which Alferov and Kromer received part of the Nobel Prize in Physics in 2000, are the workhorse of technologies such as optical communications, optical recording, supermarket scanners, laser printers and fax machines. They exhibit high performance in the visible and near infrared and rely for their operation on electrons and holes emitting photons across the semiconductor bandgap. This mechanism turns into a curse at longer wavelengths (mid-infrared) because as the bandgap, shrinks laser operation becomes much more sensitive to temperature, material defects and processing. Quantum Cascade Laser (QCL), invented in 1994, rely on a radically different process for light emission. QCLs are unipolar devices in which electrons undergo transitions between quantum well energy levels and are recycled through many stages emitting a cascade of photons. Thus by suitable tailoring of the layers' thickness, using the same heterostructure material, they can lase across the molecular fingerprint region from 3 to 25 microns and beyond into the far-infrared and submillimiter wave spectrum. High power cw room temperature QCLs and QCLs with large continuous single mode tuning range have found many applications (infrared countermeasures, spectroscopy, trace gas analysis and atmospheric chemistry) and are commercially available. )

Enhanced modeling of band nonparabolicity with application to a mid-IR quantum cascade laser structure

International Nuclear Information System (INIS)

Vukovic, N; Radovanovic, J; Milanovic, V

2014-01-01

We analyze the influence of conduction-band nonparabolicity on bound electronic states in the active region of a quantum cascade laser (QCL). Our model assumes expansion of the conduction-band dispersion relation up to a fourth order in wavevector and use of a suitable second boundary condition at the interface of two III-V semiconductor layers. Numerical results, obtained by the transfer matrix method, are presented for two mid-infrared GaAs/Al 0.33 Ga 0.67 As QCL active regions, and they are in very good agreement with experimental data found in the literature. Comparison with a different nonparabolicity model is presented for the example of a GaAs/Al 0.38 Ga 0.62 As-based mid-IR QCL. Calculations have also been carried out for one THz QCL structure to illustrate the possible application of the model in the terahertz part of the spectrum. (paper)

Effects of pulsed mid-IR lasers on bovine knee joint tissues

Science.gov (United States)

Vari, Sandor G.; Shi, Wei-Qiang; Pergadia, Vani R.; Duffy, J. T.; Miller, J. M.; van der Veen, Maurits J.; Weiss, Andrew B.; Fishbein, Michael C.; Grundfest, Warren S.

1993-07-01

We investigated the effect of varying Tm:YAG (2.014 micrometers ) and Ho:YAG (2.130 micrometers ) laser parameters on ablation rate and consequent thermal damage. Mid-infrared wavelengths are strongly absorbed by most biological tissues due to the tissue's high water content. The ablation rate of fresh bovine knee joint tissues (fibrous cartilage, hyaline cartilage, and bone) in saline was assessed as a function of radiant exposure (160 - 950 J/cm2), at pulse widths of 200 microsecond(s) ec for Tm:YAG and 250 microsecond(s) ec for Ho:YAG and a repetition rate of 2 Hz. All tissues used in this study could be efficiently ablated using two micron lasers. The mechanism of action is likely related to the formation and collapse of cavitation bubbles, associated with mid-infrared lasers. We concluded that the Tm:YAG and Ho:YAG lasers are capable of effective knee joint tissue ablation.

Spectral-temporal composition matters when cascading supercontinua into the mid-infrared

DEFF Research Database (Denmark)

Petersen, Christian Rosenberg; Moselund, Peter M.; Petersen, Christian

2016-01-01

Supercontinuum generation in chalcogenide fibers is a promising technology for broadband spatially coherent sources in the mid-infrared, but it suffers from discouraging commercial prospects, mainly due to a lack of suitable pump lasers. Here, a promising approach is experimentally demonstrated u...

Mid-infrared spectroscopic investigation

International Nuclear Information System (INIS)

Walter, L.; Vergo, N.; Salisbury, J.W.

1987-01-01

Mid-infrared spectroscopic research efforts are discussed. The development of a new instrumentation to permit advanced measurements in the mid-infrared region of the spectrum, the development of a special library of well-characterized mineral and rock specimens for interpretation of remote sensing data, and cooperative measurements of the spectral signatures of analogues of materials that may be present on the surfaces of asteroids, planets or their Moons are discussed

Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

Energy Technology Data Exchange (ETDEWEB)

Qiu, Weicheng [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China); National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn; Lin, Tie; Yin, Fei; Zhang, Bo; Chen, Xiaoshuang; Lu, Wei [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Cheng, Xiang' ai, E-mail: xiang-ai-cheng@126.com; Wang, Rui [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)

2014-11-10

In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixed conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.

Advances in Mid-IR Fiber Lasers: Tellurite, Fluoride and Chalcogenide

Directory of Open Access Journals (Sweden)

Mario Christian Falconi

2017-06-01

Full Text Available A review on the recent progress in modeling and fabrication of medium infrared (Mid-IR fiber lasers is reported. The main objective is to illustrate some recent examples of continuous wave optical sources at wavelengths longer than those commonly employed in telecom applications and allowing high beam quality. A small number of Mid-IR lasers, among the large variety of schemes, glasses, dopants and pumping schemes reported in literature, is selected on the basis of their slope efficiency and threshold pump power. In particular, tellurite, fluoride and chalcogenide fiber lasers are considered. More details are given with reference to the novel pumping schemes.

Gain and Threshold Current in Type II In(AsSb Mid-Infrared Quantum Dot Lasers

Directory of Open Access Journals (Sweden)

Qi Lu

2015-04-01

Full Text Available In this work, we improved the performance of mid-infrared type II InSb/InAs quantum dot (QD laser diodes by incorporating a lattice-matched p-InAsSbP cladding layer. The resulting devices exhibited emission around 3.1 µm and operated up to 120 K in pulsed mode, which is the highest working temperature for this type of QD laser. The modal gain was estimated to be 2.9 cm−1 per QD layer. A large blue shift (~150 nm was observed in the spontaneous emission spectrum below threshold due to charging effects. Because of the QD size distribution, only a small fraction of QDs achieve threshold at the same injection level at 4 K. Carrier leakage from the waveguide into the cladding layers was found to be the main reason for the high threshold current at higher temperatures.

Generation of broadly tunable picosecond mid-infrared laser and sensitive detection of a mid-infrared signal by parametric frequency up-conversion in MgO:LiNbO3 optical parametric amplifiers

International Nuclear Information System (INIS)

Zhang Qiu-Lin; Zhang Jing; Qiu Kang-Sheng; Zhang Dong-Xiang; Feng Bao-Hua; Zhang Jing-Yuan

2012-01-01

Picosecond optical parametric generation and amplification in the near-infrared region within 1.361–1.656 μm and the mid-infrared region within 2.976–4.875 μm is constructed on the basis of bulk MgO:LiNbO 3 crystals pumped at 1.064 μm. The maximum pulse energy reaches 1.3 mJ at 1.464 μm and 0.47 mJ at 3.894 μm, corresponding to a pump-to-idler photon conversion efficiency of 25%. By seeding the hard-to-measure mid-infrared radiation as the idler in the optical parametric amplification and measuring the amplified and frequency up-converted signal in the near-infrared or even visible region, one can measure very week mid-infrared radiation with ordinary detectors, which are insensitive to mid-infrared radiation, with a very high gain. A maximum gain factor of about 7 × 10 7 is achieved at the mid-infrared wavelength of 3.374 μm and the corresponding energy detection limit is as low as about 390 aJ per pulse. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Semiconductor Lasers Stability, Instability and Chaos

CERN Document Server

Ohtsubo, Junji

2013-01-01

This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

Luminescence from ZnSe excited by picosecond mid-infrared FEL pulses

International Nuclear Information System (INIS)

Mitsuyu, T.; Suzuki, T.; Tomimasu, T.

1998-01-01

We have observed blue band-edge emission from a ZnSe crystal under irradiation of mid-infrared picosecond free electron laser (FEL) pulses. The emission characteristics including spectrum, excitation power dependence, excitation wavelength dependence, and decay time have been investigated. The experimental results have indicated that it is difficult to understand the excitation process by multiphoton excitation, thermal excitation, or excitation through mid-gap levels. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)

Application of mid-infrared free-electron laser tuned to amide bands for dissociation of aggregate structure of protein.

Science.gov (United States)

Kawasaki, Takayasu; Yaji, Toyonari; Ohta, Toshiaki; Tsukiyama, Koichi

2016-01-01

A mid-infrared free-electron laser (FEL) is a linearly polarized, high-peak powered pulse laser with tunable wavelength within the mid-infrared absorption region. It was recently found that pathogenic amyloid fibrils could be partially dissociated to the monomer form by the irradiation of the FEL targeting the amide I band (C=O stretching vibration), amide II band (N-H bending vibration) and amide III band (C-N stretching vibration). In this study, the irradiation effect of the FEL on keratin aggregate was tested as another model to demonstrate an applicability of the FEL for dissociation of protein aggregates. Synchrotron radiation infrared microscopy analysis showed that the α-helix content in the aggregate structure decreased to almost the same level as that in the monomer state after FEL irradiation tuned to 6.06 µm (amide I band). Both irradiations at 6.51 µm (amide II band) and 8.06 µm (amide III band) also decreased the content of the aggregate but to a lesser extent than for the irradiation at the amide I band. On the contrary, the irradiation tuned to 5.6 µm (non-absorbance region) changed little the secondary structure of the aggregate. Scanning-electron microscopy observation at the submicrometer order showed that the angular solid of the aggregate was converted to non-ordered fragments by the irradiation at each amide band, while the aggregate was hardly deformed by the irradiation at 5.6 µm. These results demonstrate that the amide-specific irradiation by the FEL was effective for dissociation of the protein aggregate to the monomer form.

Highly efficient dual-wavelength mid-infrared CW Laser in diode end-pumped Er:SrF2 single crystals

Science.gov (United States)

Ma, Weiwei; Qian, Xiaobo; Wang, Jingya; Liu, Jingjing; Fan, Xiuwei; Liu, Jie; Su, Liangbi; Xu, Jun

2016-11-01

The spectral properties and laser performance of Er:SrF2 single crystals were investigated and compared with Er:CaF2. Er:SrF2 crystals have larger absorption cross-sections at the pumping wavelength, larger mid-infrared stimulated emission cross-sections and much longer fluorescence lifetimes of the upper laser level (Er3+:4I11/2 level) than those of Er:CaF2 crystals. Dual-wavelength continuous-wave (CW) lasers around 2.8 μm were demonstrated in both 4at.% and 10at.% Er:SrF2 single crystals under 972 nm laser diode (LD) end pumping. The laser wavelengths are 2789.3 nm and 2791.8 nm in the former, and 2786.4 nm and 2790.7 nm in the latter, respectively. The best laser performance has been demonstrated in lightly doped 4at.% Er:SrF2 with a low threshold of 0.100 W, a high slope efficiency of 22.0%, an maximum output power of 0.483 W.

Infrared laser damage thresholds in corneal tissue phantoms using femtosecond laser pulses

Science.gov (United States)

Boretsky, Adam R.; Clary, Joseph E.; Noojin, Gary D.; Rockwell, Benjamin A.

2018-02-01

Ultrafast lasers have become a fixture in many biomedical, industrial, telecommunications, and defense applications in recent years. These sources are capable of generating extremely high peak power that can cause laser-induced tissue breakdown through the formation of a plasma upon exposure. Despite the increasing prevalence of such lasers, current safety standards (ANSI Z136.1-2014) do not include maximum permissible exposure (MPE) values for the cornea with pulse durations less than one nanosecond. This study was designed to measure damage thresholds in corneal tissue phantoms in the near-infrared and mid-infrared to identify the wavelength dependence of laser damage thresholds from 1200-2500 nm. A high-energy regenerative amplifier and optical parametric amplifier outputting 100 femtosecond pulses with pulse energies up to 2 mJ were used to perform exposures and determine damage thresholds in transparent collagen gel tissue phantoms. Three-dimensional imaging, primarily optical coherence tomography, was used to evaluate tissue phantoms following exposure to determine ablation characteristics at the surface and within the bulk material. The determination of laser damage thresholds in the near-IR and mid-IR for ultrafast lasers will help to guide safety standards and establish the appropriate MPE levels for exposure sensitive ocular tissue such as the cornea. These data will help promote the safe use of ultrafast lasers for a wide range of applications.

Semiconductor Lasers Stability, Instability and Chaos

CERN Document Server

Ohtsubo, Junji

2008-01-01

This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

Ultrafast laser-semiconductor interactions

International Nuclear Information System (INIS)

Schile, L.A.

1996-01-01

Studies of the ultrafast (< 100 fs) interactions of infrared, sub-100 fs laser pulses with IR, photosensitive semiconductor materials InGaAs, InSb, and HgCdTe are reported. Both the carrier dynamics and the associated Terahertz radiation from these materials are discussed. The most recent developments of femtosecond (< 100 fs) Optical Parametric Oscillators (OPO) has extended the wavelength range from the visible to 5.2 μm. The photogenerated semiconductor free carrier dynamics are determined in the 77 to 300 degrees K temperature range using the Transmission Correlation Peak (TCP) method. The electron-phonon scattering times are typically 200 - 600 fs. Depending upon the material composition and substrate on which the IR crystalline materials are deposited, the nonlinear TCP absorption gives recombination rates as fast as 10's of picoseconds. For the HgCdTe, there exists a 400 fs electron-phonon scattering process along with a much longer 3600 fs loss process. Studies of the interactions of these ultrashort laser pulses with semiconductors produce Terahertz (Thz) radiative pulses. With undoped InSb, there is a substantial change in the spectral content of this THz radiation between 80 - 260 degrees K while the spectrum of Te-doped InSb remains nearly unchanged, an effect attributed to its mobility being dominated by impurity scattering. At 80 degrees K, the terahertz radiation from undoped InSb is dependent on wavelength, with both a higher frequency spectrum and much larger amplitudes generated at longer wavelengths. No such effect is observed at 260 degrees K. Finally, new results on the dependence of the emitted THz radiation on the InSb crystal's orientation is presented

Boundary conditions for 3D dynamic models of ablation of ceramics by pulsed mid-infrared lasers

Energy Technology Data Exchange (ETDEWEB)

Vila Verde, A. [Department of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Ramos, Marta M.D. [Department of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal)]. E-mail: marta@fisica.uminho.pt

2005-07-15

We present and discuss a set of boundary conditions (BCs) to use in three-dimensional, mesoscopic, finite element models of mid-infrared pulsed laser ablation of brittle materials. These models allow the study of the transient displacement and stress fields generated at micrometer scales during and after one laser pulse, where using conventional BCs may lead to some results without physical significance that can be considered an artefact of the calculations. The proposed BCs are tested and applied to a micrometer-scale continuous model of human dental enamel under CO{sub 2} radiation (10.6 {mu}m, 0.35 {mu}s pulse, sub-ablative fluence), giving rise to the following results: the highest stress is obtained at the irradiated surface of the model, at the end of the laser pulse, but afterwards it decreases rapidly until it becomes significantly lower than the stress in a region 2.5 {mu}m deep in the model; a thermally induced vibration in the material is predicted. This non-intuitive dynamics in stress and displacement distribution cannot be neglected and has to be considered in dynamic laser ablation models, since it may have serious implications in the mechanisms of ablation.

Hollow core waveguide as mid-infrared laser modal beam filter

Energy Technology Data Exchange (ETDEWEB)

Patimisco, P.; Giglio, M.; Spagnolo, V. [Dipartimento Interateneo di Fisica, Università e Politecnico di Bari, CNR-IFN UOS BARI, Via Amendola 173, 70126 Bari (Italy); Sampaolo, A. [Dipartimento Interateneo di Fisica, Università e Politecnico di Bari, CNR-IFN UOS BARI, Via Amendola 173, 70126 Bari (Italy); Department of Electrical and Computer Engineering, Rice University, 6100 Main Street, Houston, Texas 77005 (United States); Kriesel, J. M. [Opto-Knowledge Systems, Inc. (OKSI), 19805 Hamilton Ave., Torrance, California 90502-1341 (United States); Tittel, F. K. [Department of Electrical and Computer Engineering, Rice University, 6100 Main Street, Houston, Texas 77005 (United States)

2015-09-21

A novel method for mid-IR laser beam mode cleaning employing hollow core waveguide as a modal filter element is reported. The influence of the input laser beam quality on fiber optical losses and output beam profile using a hollow core waveguide with 200 μm-bore size was investigated. Our results demonstrate that even when using a laser with a poor spatial profile, there will exist a minimum fiber length that allows transmission of only the Gaussian-like fundamental waveguide mode from the fiber, filtering out all the higher order modes. This essentially single mode output is preserved also when the waveguide is bent to a radius of curvature of 7.5 cm, which demonstrates that laser mode filtering can be realized even if a curved light path is required.

Mid-infrared supercontinuum covering the 1.4–13.3 μm molecular fingerprint region using ultra-high NA chalcogenide step-index fibre

DEFF Research Database (Denmark)

Petersen, Christian Rosenberg; Møller, Uffe Visbech; Kubat, Irnis

2014-01-01

-power laser diodes, quantum cascade lasers and synchrotron radiation have precluded mid-infrared applications where the spatial coherence, broad bandwidth, high brightness and portability of a supercontinuum laser are all required. Here, we demonstrate experimentally that launching intense ultra-short pulses...... the potential of fibres to emit across the mid-infrared molecular ‘fingerprint region’, which is of key importance for applications such as early cancer diagnostics3, gas sensing and food quality control....

Modular PbSrS/PbS mid-infrared vertical external cavity surface emitting laser on Si

Science.gov (United States)

Khiar, A.; Rahim, M.; Fill, M.; Felder, F.; Zogg, H.; Cao, D.; Kobayashi, S.; Yokoyama, T.; Ishida, A.

2011-07-01

A mid-infrared vertical external cavity surface emitting laser (VECSEL) based on undoped PbS is described herein. A 200 nm-thick PbS active layer embedded between PbSrS cladding layers forms a double heterostructure. The layers are grown on a lattice and thermal expansion mismatched Si-substrate. The substrate is placed onto a flat bottom Bragg mirror again grown on a Si substrate, and the VECSEL is completed with a curved top mirror. Pumping is done optically with a 1.55 μm laser diode. This leads to an extremely simple modular fabrication process. Lasing wavelengths range from 3-3.8 μm at 100-260 K heat sink temperature. The lowest threshold power is ˜210 mWp and highest output power is ˜250 mWp. The influence of the different recombination mechanism as well as free carrier absorption on the threshold power is modeled.

Optimum output coupling for a mid-infrared KTiOAsO4 optical parametric oscillator

International Nuclear Information System (INIS)

Li, Guochao; Gao, Yesheng; Zheng, Guangjin; Zhao, Yao; Chen, Kunfeng; Wang, Qingpu; Bai, Fen

2013-01-01

Taking into account the turn off time of the Q-switch, the coupled equations for a mid-infrared KTiOAsO 4 optical parametric oscillator (OPO) are given. These rate equations are solved numerically and some key parameters for designing the laser system are determined. The key parameters include the optimal coupling and nonlinear crystal length which maximize the output power and OPO conversion efficiency. We found that a low-loss singly resonant OPO cavity not only enhances the mid-infrared output but also decreases the optimal OPO crystal length. (paper)

Laser semiconductor diode integrated with frequency doubler

International Nuclear Information System (INIS)

Tighineanu, I.; Dorogan, V.; Suruceanu, G.

2003-01-01

The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

Mid-Infrared Frequency-Agile Dual-Comb Spectroscopy

Science.gov (United States)

Luo, Pei-Ling; Yan, Ming; Iwakuni, Kana; Millot, Guy; Hänsch, Theodor W.; Picqué, Nathalie

2016-06-01

We demonstrate a new approach to mid-infrared dual-comb spectroscopy. It opens up new opportunities for accurate real-time spectroscopic diagnostics and it significantly simplifies the technique of dual-comb spectroscopy. Two mid-infrared frequency combs of slightly different repetition frequencies and moderate, but rapidly tunable, spectral span are generated in the 2800-3200 cm-1 region. The generators rely on electro-optic modulators, nonlinear fibers for spectral broadening and difference frequency generation and do not involve mode-locked lasers. Flat-top frequency combs span up to 10 cm-1 with a comb line spacing of 100 MHz (3×10-3 cm-1). The performance of the spectrometer without any phase-lock electronics or correction scheme is illustrated with spectra showing resolved comb lines and Doppler-limited spectra of methane. High precision on the spectroscopic parameter (line positions and intensities) determination is demonstrated for spectra measured on a millisecond time scale and it is validated with comparison with literature data. G. Millot, S. Pitois, M. Yan, T. Hovannysyan, A. Bendahmane, T.W. Hänsch, N. Picqué, Frequency-agile dual-comb spectroscopy, Nature Photonics 10, 27-30 (2016).

PbSe quantum well mid-infrared vertical external cavity surface emitting laser on Si-substrates

Science.gov (United States)

Fill, M.; Khiar, A.; Rahim, M.; Felder, F.; Zogg, H.

2011-05-01

Mid-infrared vertical external cavity surface emitting lasers based on PbSe/PbSrSe multi-quantum-well structures on Si-substrates are realized. A modular design allows growing the active region and the bottom Bragg mirror on two different Si-substrates, thus facilitating comparison between different structures. Lasing is observed from 3.3 to 5.1 μm wavelength and up to 52 °C heat sink temperature with 1.55 μm optical pumping. Simulations show that threshold powers are limited by Shockley-Read recombination with lifetimes as short as 0.1 ns. At higher temperatures, an additional threshold power increase occurs probably due to limited carrier diffusion length and carrier leakage, caused by an unfavorable band alignment.

Mid-infrared upconversion spectroscopy

DEFF Research Database (Denmark)

Tidemand-Lichtenberg, Peter; Dam, Jeppe Seidelin; Andersen, H. V.

2016-01-01

Mid-infrared (MIR) spectroscopy is emerging as an attractive alternative to near-infrared or visible spectroscopy. MIR spectroscopy offers a unique possibility to probe the fundamental absorption bands of a large number of gases as well as the vibrational spectra of complex molecules. In this paper...

Generation and application of ultrashort coherent mid-infrared electromagnetic radiation

Science.gov (United States)

Wandel, Scott

Particle accelerators are useful instruments that help address critical issues for the future development of nuclear energy. Current state-of-the-art accelerators based on conventional radio-frequency (rf) cavities are too large and expensive for widespread commercial use, and alternative designs must be considered for supplying relativistic beams to small-scale applications, including medical imaging, secu- rity screening, and scientific research in a university-scale laboratory. Laser-driven acceleration using micro-fabricated dielectric photonic structures is an attractive approach because such photonic microstructures can support accelerating fields that are 10 to 100 times higher than that of rf cavity-based accelerators. Dielectric laser accelerators (DLAs) use commercial lasers as a driving source, which are smaller and less expensive than the klystrons used to drive current rf-based accelerators. Despite the apparent need for compact and economical laser sources for laser-driven acceleration, the availability of suitable high-peak-power lasers that cover a broad spectral range is currently limited. To address the needs of several innovative acceleration mechanisms like DLA, it is proposed to develop a coherent source of mid-infrared (IR) electromagnetic radiation that can be implemented as a driving source of laser accelerators. The use of ultrashort mid-IR high peak power laser systems in various laser-driven acceleration schemes has shown the potential to greatly reduce the optical pump intensities needed to realize high acceleration gradients. The optical intensity needed to achieve a given ponderomotive potential is 25 times less when using a 5-mum mid-IR laser as compared to using a 1-mum near-IR solid-state laser. In addition, dielectric structure breakdown caused by multiphoton ionization can be avoided by using longer-wavelength driving lasers. Current mid-IR laser sources do not produce sufficiently short pulse durations, broad spectral bandwidths

Low-loss 3D-laser-written mid-infrared LiNbO3 depressed-index cladding waveguides for both TE and TM polarizations.

Science.gov (United States)

Nguyen, Huu-Dat; Ródenas, Airán; Vázquez de Aldana, Javier R; Martín, Guillermo; Martínez, Javier; Aguiló, Magdalena; Pujol, Maria Cinta; Díaz, Francesc

2017-02-20

We report mid-infrared LiNbO3 depressed-index microstructured cladding waveguides fabricated by three-dimensional laser writing showing low propagation losses (~1.5 dB/cm) at 3.68 µm wavelength for both the transverse electric and magnetic polarized modes, a feature previously unachieved due to the strong anisotropic properties of this type of laser microstructured waveguides and which is of fundamental importance for many photonic applications. Using a heuristic modeling-testing iteration design approach which takes into account cladding induced stress-optic index changes, the fabricated cladding microstructure provides low-loss single mode operation for the mid-IR for both orthogonal polarizations. The dependence of the localized refractive index changes within the cladding microstructure with post-fabrication thermal annealing processes was also investigated, revealing its complex dependence of the laser induced refractive index changes on laser fabrication conditions and thermal post-processing steps. The waveguide modes properties and their dependence on thermal post-processing were numerically modeled and fitted to the experimental values by systematically varying three fundamental parameters of this type of waveguides: depressed refractive index values at sub-micron laser-written tracks, track size changes, and piezo-optic induced refractive index changes.

Coherent control of D2/H2 dissociative ionization by a mid-infrared two-color laser field

International Nuclear Information System (INIS)

Wanie, Vincent; Ibrahim, Heide; Beaulieu, Samuel; Thiré, Nicolas; Schmidt, Bruno E; Légaré, François; Deng, Yunpei; Alnaser, Ali S; Litvinyuk, Igor V; Tong, Xiao-Min

2016-01-01

Steering the electrons during an ultrafast photo-induced process in a molecule influences the chemical behavior of the system, opening the door to the control of photochemical reactions and photobiological processes. Electrons can be efficiently localized using a strong laser field with a well-designed temporal shape of the electric component. Consequently, many experiments have been performed with laser sources in the near-infrared region (800 nm) in the interest of studying and enhancing the electron localization. However, due to its limited accessibility, the mid-infrared (MIR) range has barely been investigated, although it allows to efficiently control small molecules and even more complex systems. To push further the manipulation of basic chemical mechanisms, we used a MIR two-color (1800 and 900 nm) laser field to ionize H 2 and D 2 molecules and to steer the remaining electron during the photo-induced dissociation. The study of this prototype reaction led to the simultaneous control of four fragmentation channels. The results are well reproduced by a theoretical model solving the time-dependent Schrödinger equation for the molecular ion, identifying the involved dissociation mechanisms. By varying the relative phase between the two colors, asymmetries (i.e., electron localization selectivity) of up to 65% were obtained, corresponding to enhanced or equivalent levels of control compared to previous experiments. Experimentally easier to implement, the use of a two-color laser field leads to a better electron localization than carrier-envelope phase stabilized pulses and applying the technique in the MIR range reveals more dissociation channels than at 800 nm. (paper)

Mid-Infrared Continuously Tunable Single Mode VECSEL

Science.gov (United States)

Khiar, A.; Rahim, M.; Felder, F.; Fill, M.; Zogg, H.

2011-12-01

Tunable mid-infrared vertical external cavity surface emitting lasers were developed for the wavelength range around 3.8-3.9 μm and 3.2-3.3 μm, respectively. The devices are based on lead salt materials epitaxially grown by MBE on a Si substrate. The active part consists of PbSe QW in a PbSrSe host layer. Both devices are operated around -20 °C and have output power of several 10 mW. By changing the cavity length, a single mode hop free tuning range up to 80 cm-1 is achieved.

A Mid-Infrared Search for Kardashev Civilizations

Science.gov (United States)

Sigurdsson, Steinn; Wright, J.; Griffith, R.; Povich, M. S.

2014-01-01

We are using the WISE all-sky Source Catalog to search for and put upper limits on the existence of extraterrestrial civilizations with large energy supplies. Any galaxy-spanning (Type III) civilization with an energy supply of more than about one percent of its stellar luminosity will have detectable mid-infrared excess, and nearby (extended) galaxies with civilizations with supplies more than about 80% of their stellar luminosity will be well-distinguished from nearly all natural sources in WISE color-color space. Mid-infrared spectra, far-infrared photometry, and radio emission from CO can all be used to distinguish extraterrestrial mid-infrared radiation from dust.

Squeezing in an injection-locked semiconductor laser

Science.gov (United States)

Inoue, S.; Machida, S.; Yamamoto, Y.; Ohzu, H.

1993-09-01

The intensity-noise properties of an injection-locked semiconductor laser were studied experimentally. The constant-current-driven semiconductor laser producing the amplitude-squeezed state whose intensity noise was reduced below the standard quantum limit (SQL) by 0.72 dB was injection-locked by an external master laser. The measured intensity-noise level of the injection-locked semiconductor laser was 0.91 dB below the SQL. This experimental result indicates that a phase-coherent amplitude-squeezed state or squeezed vacuum state together with a reference local oscillator wave can be generated directly by semiconductor laser systems.

Metal-insulator-semiconductor photodetectors.

Science.gov (United States)

Lin, Chu-Hsuan; Liu, Chee Wee

2010-01-01

The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

Metal-Insulator-Semiconductor Photodetectors

Directory of Open Access Journals (Sweden)

Chu-Hsuan Lin

2010-09-01

Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

Static and time-resolved mid-infrared spectroscopy of Hg0.95Cd0.05Cr2Se4 spinel.

Science.gov (United States)

Barsaume, S; Telegin, A V; Sukhorukov, Yu P; Stavrias, N; Fedorov, V A; Menshchikova, T K; Kimel, A V

2017-08-16

Static and time-resolved mid-infrared spectroscopy of ferromagnetic single crystal Hg 0.95 Cd 0.05 Cr 2 Se 4 was performed below the absorption edge, in order to reveal the origin of the electronic transitions contributing to the magneto-optical properties of this material. The mid-infrared spectroscopy reveals a strong absorption peak around 0.236 eV which formerly was assigned to a transition within the selenide-chromium complexes ([Formula: see text] Se -Cr 2+ ). To reveal the sensitivity of the transition to the magnetic order, we performed the studies in a temperature range across the Curie temperature and magnetic fields across the value at which the saturation of ferromagnetic magnetization occurs. Despite the fact that the Curie temperature of this ferromagnetic semiconductor is around 107 K, the intensity of the mid-infrared transition reduces substantially increasing the temperature, so that already at 70 K the absorption peak is hardly visible. Such a dramatic decrease of the oscillator strength is observed simultaneously with the strong red-shift of the absorption edge in the magnetic semiconductor. Employing a time-resolved pump-and-probe technique enabled us to determine the lifetime of the electrons in the excited state of this optical transition. In the temperature range from 7 K to 80 K, the lifetime changes from 3 ps to 6 ps. This behavior agrees with the phenomenon of giant oscillator strength described earlier for weakly bound excitons in nonmagnetic semiconductors.

Single frequency semiconductor lasers

CERN Document Server

Fang, Zujie; Chen, Gaoting; Qu, Ronghui

2017-01-01

This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

Investigation of SOI Raman Lasers for Mid-Infrared Gas Sensing

Science.gov (United States)

Passaro, Vittorio M.N.; De Leonardis, Francesco

2009-01-01

In this paper, the investigation and detailed modeling of a cascaded Raman laser, operating in the midwave infrared region, is described. The device is based on silicon-on-insulator optical waveguides and a coupled resonant microcavity. Theoretical results are compared with recent experiments, demonstrating a very good agreement. Design criteria are derived for cascaded Raman lasers working as continuous wave light sources to simultaneously sense two types of gases, namely C2H6 and CO2, at a moderate power level of 130 mW. PMID:22408481

Toward power scaling in an acetylene mid-infrared hollow-core optical fiber gas laser: effects of pressure, fiber length, and pump power

Science.gov (United States)

Weerasinghe, H. W. Kushan; Dadashzadeh, Neda; Thirugnanasambandam, Manasadevi P.; Debord, Benoît.; Chafer, Matthieu; Gérôme, Frédéric; Benabid, Fetah; Corwin, Kristan L.; Washburn, Brian R.

2018-02-01

The effect of gas pressure, fiber length, and optical pump power on an acetylene mid-infrared hollow-core optical fiber gas laser (HOFGLAS) is experimentally determined in order to scale the laser to higher powers. The absorbed optical power and threshold power are measured for different pressures providing an optimum pressure for a given fiber length. We observe a linear dependence of both absorbed pump energy and lasing threshold for the acetylene HOFGLAS, while maintaining a good mode quality with an M-squared of 1.15. The threshold and mode behavior are encouraging for scaling to higher pressures and pump powers.

Laser Cooling of 2-6 Semiconductors

Science.gov (United States)

2016-08-12

AFRL-AFOSR-JP-TR-2016-0067 Laser Cooling of II-VI Semiconductors Qihua Xiong NANYANG TECHNOLOGICAL UNIVERSITY Final Report 08/12/2016 DISTRIBUTION A...From - To) 15 May 2013 to 14 May 2016 4. TITLE AND SUBTITLE Laser Cooling of II-VI Semiconductors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-13-1...13. SUPPLEMENTARY NOTES 14. ABSTRACT The breakthrough of laser cooling in semiconductor has stimulated strong interest in further scaling up towards

Semiconductor lasers and herterojunction leds

CERN Document Server

Kressel, Henry

2012-01-01

Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

Selective treatment of carious dentin using a mid-infrared tunable pulsed laser at 6 μm wavelength range

Science.gov (United States)

Saiki, Masayuki; Ishii, Katsunori; Yoshikawa, Kazushi; Yasuo, Kenzo; Yamamoto, Kazuyo; Awazu, Kunio

2011-03-01

Optical technologies have good potential for caries detection, prevention, excavation, and the realization of minimal intervention dentistry. This study aimed to develop a selective excavation technique of carious tissue using the specific absorption in 6 μm wavelength range. Bovine dentin demineralized with lactic acid solution was used as a carious dentin model. A mid-infrared tunable pulsed laser was obtained by difference-frequency generation technique. The wavelength was tuned to 6.02 and 6.42 μm which correspond to absorption bands called amide I and amide II, respectively. The laser delivers 5 ns pulse width at a repetition rate of 10 Hz. The morphological change after irradiation was observed with a scanning electron microscope, and the measurement of ablation depth was performed with a confocal laser microscope. At λ = 6.02 μm and the average power density of 15 W/cm2, demineralized dentin was removed selectively with less-invasive effect on sound dentin. The wavelength of 6.42 μm also showed the possibility of selective removal. High ablation efficiency and low thermal side effect were observed using the nanosecond pulsed laser with λ = 6.02 μm. In the near future, development of compact laser device will open the minimal invasive laser treatment to the dental clinic.

Waveguide based external cavity semiconductor lasers

NARCIS (Netherlands)

Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

2012-01-01

We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

Mid-infrared PbTe vertical external cavity surface emitting laser on Si-substrate with above 1 W output power

Science.gov (United States)

Rahim, M.; Fill, M.; Felder, F.; Chappuis, D.; Corda, M.; Zogg, H.

2009-12-01

Mid-infrared vertical external cavity surface emitting lasers (VECSELs) emitting above 1 W output power in pulsed mode and up to 17 mW in continuous mode at -172 °C were realized. Emission wavelength changes from 5 μm at -172 °C to 3.6 μm at 20 °C heat sink temperature. The active medium is a one wavelength thick PbTe layer grown by molecular beam epitaxy on a Si-substrate. It is followed by a 2.5 pair Pb1-yEuyTe/EuTe epitaxial Bragg mirror. The cavity is completed with an external curved Pb1-yEuyTe/BaF2 mirror. The VECSEL is optically pumped with 1.55 μm wavelength laser and In-soldered to Cu heat sink. No microstructural processing is needed.

Ring cavity surface emitting semiconductor lasers

International Nuclear Information System (INIS)

Mujagic, E.

2010-01-01

Quantum cascade lasers (QCLs) are electrically driven semiconductor lasers, which have undergone a steady improvement since the first demonstration in 1994. These are now well established as reliable sources of coherent light in the mid-infrared (MIR) and terahertz (THz)range of the electromagnetic spectrum (3-300 μm). The rapid progress of this type of lasers is based on a high degree of freedom in tailoring the emission wavelength within a large variety of semiconductor heterostructure designs and materials. These properties have attracted the attention of various applications such as gas analysis, chemical sensing, spectral imaging and free-space telecommunication. In order to improve the selectivity, sensitivity and efficiency of today's sensor systems, high optical power, continuous wave and room temperature performance, single-mode operation and low divergence optical beams, are highly desirable qualities of a compact laser source in this field of research. Since all of these features cannot be provided by a conventional edge-emitting device at the same time, research has put focus on the development of surface emitting devices. Nowadays, the vertical cavity surface emitting lasers (VCSELs) are the most prominent representative for this type of light emitters. With its capability of producing narrow circular beams, the feasibility of two-dimensional arrays and on-wafer testing, such a coherent light source results in a reduction of the fabrication effort and production costs. Since the radiation in QCLs is strictly polarized normal to the epitaxial layer plane, fabrication of VCSELs based on QC structures is not viable. The subject of this work is the design and realization of 'ring cavity surface emitting lasers' (ring-CSELs). This type of lasers employs a circular ring cavity and a resonant distributed feedback (DFB) surface grating. Ring-CSELs were fabricated on the basis of MIR and THz QC structures, which cover a wavelength range from 4 μm to 93 �

Fundamentals of semiconductor lasers

CERN Document Server

Numai, Takahiro

2015-01-01

This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

Mid-infrared frequency comb via coherent dispersive wave generation in silicon nitride nanophotonic waveguides

Science.gov (United States)

Guo, Hairun; Herkommer, Clemens; Billat, Adrien; Grassani, Davide; Zhang, Chuankun; Pfeiffer, Martin H. P.; Weng, Wenle; Brès, Camille-Sophie; Kippenberg, Tobias J.

2018-06-01

Mid-infrared optical frequency combs are of significant interest for molecular spectroscopy due to the large absorption of molecular vibrational modes on the one hand, and the ability to implement superior comb-based spectroscopic modalities with increased speed, sensitivity and precision on the other hand. Here, we demonstrate a simple, yet effective, method for the direct generation of mid-infrared optical frequency combs in the region from 2.5 to 4.0 μm (that is, 2,500-4,000 cm-1), covering a large fraction of the functional group region, from a conventional and compact erbium-fibre-based femtosecond laser in the telecommunication band (that is, 1.55 μm). The wavelength conversion is based on dispersive wave generation within the supercontinuum process in an unprecedented large-cross-section silicon nitride (Si3N4) waveguide with the dispersion lithographically engineered. The long-wavelength dispersive wave can perform as a mid-infrared frequency comb, whose coherence is demonstrated via optical heterodyne measurements. Such an approach can be considered as an alternative option to mid-infrared frequency comb generation. Moreover, it has the potential to realize compact dual-comb spectrometers. The generated combs also have a fine teeth-spacing, making them suitable for gas-phase analysis.

1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

DEFF Research Database (Denmark)

Hansen, Anders Kragh; Christensen, Mathias; Noordegraaf, Danny

2017-01-01

Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation......, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction...... power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination...

Kinetic and Diagnostic Studies of Molecular Plasmas Using Laser Absorption Techniques

International Nuclear Information System (INIS)

Welzel, S; Rousseau, A; Davies, P B; Roepcke, J

2007-01-01

Within the last decade mid infrared absorption spectroscopy between 3 and 20 μm, known as Infrared Laser Absorption Spectroscopy (IRLAS) and based on tuneable semiconductor lasers, namely lead salt diode lasers, often called tuneable diode lasers (TDL), and quantum cascade lasers (QCL) has progressed considerably as a powerful diagnostic technique for in situ studies of the fundamental physics and chemistry of molecular plasmas. The increasing interest in processing plasmas containing hydrocarbons, fluorocarbons, organo-silicon and boron compounds has lead to further applications of IRLAS because most of these compounds and their decomposition products are infrared active. IRLAS provides a means of determining the absolute concentrations of the ground states of stable and transient molecular species, which is of particular importance for the investigation of reaction kinetics. Information about gas temperature and population densities can also be derived from IRLAS measurements. A variety of free radicals and molecular ions have been detected, especially using TDLs. Since plasmas with molecular feed gases are used in many applications such as thin film deposition, semiconductor processing, surface activation and cleaning, and materials and waste treatment, this has stimulated the adaptation of infrared spectroscopic techniques to industrial requirements. The recent development of QCLs offers an attractive new option for the monitoring and control of industrial plasma processes as well as for highly time-resolved studies on the kinetics of plasma processes. The aim of the present article is threefold: (i) to review recent achievements in our understanding of molecular phenomena in plasmas (ii) to report on selected studies of the spectroscopic properties and kinetic behaviour of radicals, and (iii) to describe the current status of advanced instrumentation for TDLAS in the mid infrared

Real-Time and Label-Free Chemical Sensor-on-a-chip using Monolithic Si-on-BaTiO3 Mid-Infrared waveguides.

Science.gov (United States)

Jin, Tiening; Li, Leigang; Zhang, Bruce; Lin, Hao-Yu Greg; Wang, Haiyan; Lin, Pao Tai

2017-07-19

Chip-scale chemical detection is demonstrated by using mid-Infrared (mid-IR) photonic circuits consisting of amorphous silicon (a-Si) waveguides on an epitaxial barium titanate (BaTiO 3 , BTO) thin film. The highly c-axis oriented BTO film was grown by the pulsed laser deposition (PLD) method and it exhibits a broad transparent window from λ = 2.5 μm up to 7 μm. The waveguide structure was fabricated by the complementary metal-oxide-semiconductor (CMOS) process and a sharp fundamental waveguide mode has been observed. By scanning the spectrum within the characteristic absorption regime, our mid-IR waveguide successfully perform label-free monitoring of various organic solvents. The real-time heptane detection is accomplished by measuring the intensity attenuation at λ = 3.0-3.2 μm, which is associated with -CH absorption. While for methanol detection, we track the -OH absorption at λ = 2.8-2.9 μm. Our monolithic Si-on-BTO waveguides establish a new sensor platform that enables integrated photonic device for label-free chemical detection.

Novel mid-infrared imaging system based on single-mode quantum cascade laser illumination and upconversion

DEFF Research Database (Denmark)

Tomko, Jan; Junaid, Saher; Tidemand-Lichtenberg, Peter

2017-01-01

Compared to the visible or near-infrared (NIR) spectral regions, there is a lack of very high sensitivity detectors in the mid-infrared (MIR) that operate near room temperature. Upconversion of the MIR light to NIR light that is imaged using affordable, fast, and sensitive NIR detectors or camera...

1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

Science.gov (United States)

Hansen, A. K.; Christensen, M.; Noordegraaf, D.; Heist, P.; Papastathopoulos, E.; Loyo-Maldonado, V.; Jensen, O. B.; Stock, M. L.; Skovgaard, P. M. W.

2017-02-01

Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction- limited, single frequency operation with output powers up to 8 W near 1120 nm. We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications.

Innovative mid-infrared detector concepts

Science.gov (United States)

Höfling, Sven; Pfenning, Andreas; Weih, Robert; Ratajczak, Albert; Hartmann, Fabian; Knebl, Georg; Kamp, Martin; Worschech, Lukas

2016-09-01

Gas sensing is a key technology with applications in various industrial, medical and environmental areas. Optical detection mechanisms allow for a highly selective, contactless and fast detection. For this purpose, rotational-vibrational absorption bands within the mid infrared (MIR) spectral region are exploited and probed with appropriate light sources. During the past years, the development of novel laser concepts such as interband cascade lasers (ICLs) and quantum cascade lasers (QCLs) has driven a continuous optimization of MIR laser sources. On the other hand side, there has been relatively little progress on detectors in this wavelength range. Here, we study two novel and promising GaSb-based detector concepts: Interband cascade detectors (ICD) and resonant tunneling diode (RTD) photodetectors. ICDs are a promising approach towards highly sensitive room temperature detection of MIR radiation. They make use of the cascading scheme that is enabled by the broken gap alignment of the two binaries GaSb and InAs. The interband transition in GaSb/InAs-superlattices (SL) allows for normal incidence detection. The cut-off wavelength, which determines the low energy detection limit, can be engineered via the SL period. RTD photodetectors act as low noise and high speed amplifiers of small optically generated electrical signals. In contrast to avalanche photodiodes, where the gain originates from multiplication due to impact ionization, in RTD photodetectors a large tunneling current is modulated via Coulomb interaction by the presence of photogenerated minority charge carriers. For both detector concepts, first devices operational at room temperature have been realized.

Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications

Science.gov (United States)

Al-Kabi, Sattar H. Sweilim

Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. The GeSn films were grown on Ge-buffered Si substrates in a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. A systematic study was done for thin GeSn films (thickness 400 nm) with Sn composition 5 to 17.5%. The room temperature photoluminescence (PL) spectra were measured that showed a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Strong PL intensity and low defect density indicated high material quality. Moreover, the PL study of n-doped samples showed bandgap narrowing compared to the unintentionally p-doped (boron) thin films with similar Sn compositions. Finally, optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 mum were demonstrated using high-quality GeSn films with Sn compositions up to 17.5%. The achieved maximum Sn composition of 17.5% broke the acknowledged Sn incorporation limit using similar deposition chemistry. The highest lasing temperature was measured at 180 K with an active layer thickness as thin as 270 nm. The unprecedented lasing performance is due to the achievement of high material quality and a robust fabrication process. The results reported in this work show a major advancement towards Si-based electrically pumped mid-infrared

Temperature controller of semiconductor laser

Czech Academy of Sciences Publication Activity Database

Matoušek, Vít; Číp, Ondřej

2003-01-01

Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

Development and characterization of a semi-conductor laser sensor for real time measurement and identification of atmospheric pollutants

International Nuclear Information System (INIS)

Boulos, F.; Zaatar, Y.; Atanas, J.P.; Bechara, J.

2004-01-01

Full text.Tunable diode laser absorption spectroscopy (TDLAS) in the near infrared (NIR) using semiconductor lasers of compounds between elements of group III (Ga, Al and In) and group V (P, As and Sb) is being increasingly used in various environmental and industrial process control applications. This technique exploits the unique properties of these laser materials i.e., high coherence, high monochromaticity, low divergence and high brightness to permit rapid sensitive detection with high selectivity and spectral resolution. A computer-interfaced near infrared semiconductor laser sensor has been developed in our laboratory for spectroscopic applications in air pollution monitoring. The sensor can be operated in two configurations: open path free beam coupled to a multiple pass White cell and fiber optic guided beam coupled to an evanescent wave sensor. This paper will present an overview of the system's modulation, sensing and data acquisition methods and some recent measurement results, together with a description of ongoing research and development for the improvement of the system's performance and sensitivity

Progress in semiconductor laser diodes: SPIE volume 723

International Nuclear Information System (INIS)

Eichen, E.

1987-01-01

This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes

Mesoscopic modeling of the response of human dental enamel to mid-infrared radiation

Science.gov (United States)

Vila Verde, Ana; Ramos, Marta; Stoneham, A. M.

2006-03-01

Ablation of human dental enamel, a composite biomaterial with water pores, is of significant importance in minimally invasive laser dentistry but progress in the area is hampered by the lack of optimal laser parameters. We use mesoscopic finite element models of this material to study its response to mid-infrared radiation. Our results indicate that the cost-effective, off-the-shelf CO2 laser at λ = 10.6 μm may in fact ablate enamel precisely, reproducibly and with limited unwanted side effects such as cracking or heating, provided that a pulse duration of 10 μs is used. Furthermore, our results also indicate that the Er:YAG laser (λ = 2.94 μm), currently popular for laser dentistry, may in fact cause unwanted deep cracking in the enamel when regions with unusually high water content are irradiated, and also provide an explanation for the large range of ablation threshold values observed for this material. The model may be easily adapted to study the response of any composite material to infrared radiation and thus may be useful for the scientific community.

Frequency locking of an extended-cavity quantum cascade laser to a frequency comb for precision mid infrared spectroscopy

KAUST Repository

Alsaif, Bidoor; Lamperti, Marco; Gatti, Davide; Laporta, Paolo; Fermann, Martin E.; Farooq, Aamir; Marangoni, Marco

2017-01-01

Extended-cavity quantum cascade lasers (EC-QCLs) enable mode-hope-free frequency sweeps in the mid-infrared region over ranges in excess of 100 cm−1, at speeds up to 1 THz/s and with a 100-mW optical power level. This makes them ideally suited for broadband absorption spectroscopy and for the simultaneous detection of multiple gases. On the other hand, their use for precision spectroscopy has been hampered so far by a large amount of frequency noise, resulting in an optical linewidth of about 30 MHz over 50 ms [1]. This is one of the reasons why neither their frequency nor their phase have been so far locked to a frequency comb. Their use in combination with frequency combs has been performed in an open loop regime only [2], which has the merit of preserving the inherently fast modulation speed of these lasers, yet not to afford high spectral resolution and accuracy.

Frequency locking of an extended-cavity quantum cascade laser to a frequency comb for precision mid infrared spectroscopy

KAUST Repository

Alsaif, Bidoor

2017-11-02

Extended-cavity quantum cascade lasers (EC-QCLs) enable mode-hope-free frequency sweeps in the mid-infrared region over ranges in excess of 100 cm−1, at speeds up to 1 THz/s and with a 100-mW optical power level. This makes them ideally suited for broadband absorption spectroscopy and for the simultaneous detection of multiple gases. On the other hand, their use for precision spectroscopy has been hampered so far by a large amount of frequency noise, resulting in an optical linewidth of about 30 MHz over 50 ms [1]. This is one of the reasons why neither their frequency nor their phase have been so far locked to a frequency comb. Their use in combination with frequency combs has been performed in an open loop regime only [2], which has the merit of preserving the inherently fast modulation speed of these lasers, yet not to afford high spectral resolution and accuracy.

Real-time monitoring of benzene, toluene, and p-xylene in a photoreaction chamber with a tunable mid-infrared laser and ultraviolet differential optical absorption spectroscopy.

Science.gov (United States)

Parsons, Matthew T; Sydoryk, Ihor; Lim, Alan; McIntyre, Thomas J; Tulip, John; Jäger, Wolfgang; McDonald, Karen

2011-02-01

We describe the implementation of a mid-infrared laser-based trace gas sensor with a photoreaction chamber, used for reproducing chemical transformations of benzene, toluene, and p-xylene (BTX) gases that may occur in the atmosphere. The system performance was assessed in the presence of photoreaction products including aerosol particles. A mid-infrared external cavity quantum cascade laser (EC-QCL)-tunable from 9.41-9.88 μm (1012-1063 cm(-1))-was used to monitor gas phase concentrations of BTX simultaneously and in real time during chemical processing of these compounds with hydroxyl radicals in a photoreaction chamber. Results are compared to concurrent measurements using ultraviolet differential optical absorption spectroscopy (UV DOAS). The EC-QCL based system provides quantitation limits of approximately 200, 200, and 600 parts in 10(9) (ppb) for benzene, toluene, and p-xylene, respectively, which represents a significant improvement over our previous work with this laser system. Correspondingly, we observe the best agreement between the EC-QCL measurements and the UV DOAS measurements with benzene, followed by toluene, then p-xylene. Although BTX gas-detection limits are not as low for the EC-QCL system as for UV DOAS, an unidentified by-product of the photoreactions was observed with the EC-QCL, but not with the UV DOAS system.

Near-infrared light emitting device using semiconductor nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Supran, Geoffrey J.S.; Song, Katherine W.; Hwang, Gyuweon; Correa, Raoul Emile; Shirasaki, Yasuhiro; Bawendi, Moungi G.; Bulovic, Vladimir; Scherer, Jennifer

2018-04-03

A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.

Semiconductor laser using multimode interference principle

Science.gov (United States)

Gong, Zisu; Yin, Rui; Ji, Wei; Wu, Chonghao

2018-01-01

Multimode interference (MMI) structure is introduced in semiconductor laser used in optical communication system to realize higher power and better temperature tolerance. Using beam propagation method (BPM), Multimode interference laser diode (MMI-LD) is designed and fabricated in InGaAsP/InP based material. As a comparison, conventional semiconductor laser using straight single-mode waveguide is also fabricated in the same wafer. With a low injection current (about 230 mA), the output power of the implemented MMI-LD is up to 2.296 mW which is about four times higher than the output power of the conventional semiconductor laser. The implemented MMI-LD exhibits stable output operating at the wavelength of 1.52 μm and better temperature tolerance when the temperature varies from 283.15 K to 293.15 K.

Mid-infrared spectroscopic characterisation of an ultra-broadband tunable EC-QCL system intended for biomedical applications

Science.gov (United States)

Vahlsing, T.; Moser, H.; Grafen, M.; Nalpantidis, K.; Brandstetter, M.; Heise, H. M.; Lendl, B.; Leonhardt, S.; Ihrig, D.; Ostendorf, A.

2015-07-01

Mid-infrared spectroscopy has been successfully applied for reagent-free clinical chemistry applications. Our aim is to design a portable bed-side system for ICU patient monitoring, based on mid-infrared absorption spectra of continuously sampled body-fluids. Robust and miniature bed-side systems can be achieved with tunable external cavity quantum cascade lasers (EC-QCL). Previously, single EC-QCL modules covering a wavenumber interval up to 250 cm-1 have been utilized. However, for broader applicability in biomedical research an extended interval around the mid-infrared fingerprint region should be accessible, which is possible with at least three or four EC-QCL modules. For such purpose, a tunable ultra-broadband system (1920 - 780 cm-1, Block Engineering) has been studied with regard to its transient emission characteristics in ns time resolution during different laser pulse widths using a VERTEX 80v FTIR spectrometer with step-scan option. Furthermore, laser emission line profiles of all four incorporated EC-QCL modules have been analysed at high spectral resolution (0.08 cm-1) and beam profiles with few deviations from the TEM 00 spatial mode have been manifested. Emission line reproducibility has been tested for various wavenumbers in step tune mode. The overall accuracy of manufacturer default wavenumber setting has been found between ± 3 cm-1 compared to the FTIR spectrometer scale. With regard to an application in clinical chemistry, theoretically achievable concentration accuracies for different blood substrates based on blood plasma and dialysate spectra previously recorded by FTIRspectrometers have been estimated taking into account the now accessible extended wavenumber interval.

Low-intensity red and infrared laser effects at high fluences on Escherichia coli cultures

Energy Technology Data Exchange (ETDEWEB)

Barboza, L.L.; Campos, V.M.A.; Magalhaes, L.A.G. [Instituto de Biologia Roberto Alcantara Gomes, Rio de Janeiro, RJ (Brazil). Departamento de Biofisica e Biometria; Paoli, F. [Universidade Federal de Juiz de Fora (UFJF), Juiz de Fora, MG (Brazil). Departamento de Morfologia; Fonseca, A.S., E-mail: adnfonseca@ig.com.br [Universidade Federal do Estado do Rio de Janeiro (UFRJ), Rio de Janeiro, RJ (Brazil). Departamento de Ciencias Fisiologicas

2015-10-15

Semiconductor laser devices are readily available and practical radiation sources providing wavelength tenability and high monochromaticity. Low-intensity red and near-infrared lasers are considered safe for use in clinical applications. However, adverse effects can occur via free radical generation, and the biological effects of these lasers from unusually high fluences or high doses have not yet been evaluated. Here, we evaluated the survival, filamentation induction and morphology of Escherichia coli cells deficient in repair of oxidative DNA lesions when exposed to low-intensity red and infrared lasers at unusually high fluences. Cultures of wild-type (AB1157), endonuclease III-deficient (JW1625-1), and endonuclease IV-deficient (JW2146-1) E. coli, in exponential and stationary growth phases, were exposed to red and infrared lasers (0, 250, 500, and 1000 J/cm{sup 2}) to evaluate their survival rates, filamentation phenotype induction and cell morphologies. The results showed that low-intensity red and infrared lasers at high fluences are lethal, induce a filamentation phenotype, and alter the morphology of the E. coli cells. Low-intensity red and infrared lasers have potential to induce adverse effects on cells, whether used at unusually high fluences, or at high doses. Hence, there is a need to reinforce the importance of accurate dosimetry in therapeutic protocols. (author)

Frequency modulation of semiconductor disk laser pulses

Energy Technology Data Exchange (ETDEWEB)

Zolotovskii, I O; Korobko, D A; Okhotnikov, O G [Ulyanovsk State University, Ulyanovsk (Russian Federation)

2015-07-31

A numerical model is constructed for a semiconductor disk laser mode-locked by a semiconductor saturable absorber mirror (SESAM), and the effect that the phase modulation caused by gain and absorption saturation in the semiconductor has on pulse generation is examined. The results demonstrate that, in a laser cavity with sufficient second-order dispersion, alternating-sign frequency modulation of pulses can be compensated for. We also examine a model for tuning the dispersion in the cavity of a disk laser using a Gires–Tournois interferometer with limited thirdorder dispersion. (control of radiation parameters)

Few-cycle high energy mid-infrared pulse from Ho:YLF laser

International Nuclear Information System (INIS)

Murari, Krishna

2017-04-01

Over the past decade, development of high-energy ultrafast laser sources has led to important breakthroughs in attoscience and strong-field physics study in atoms and molecules. Coherent pulse synthesis of few-cycle high-energy laser pulse is a promising tool to generate isolated attosecond pulses via high harmonics generation (HHG). An effective way to extend the HHG cut-off energy to higher values is making use of long mid-infrared (MIR) driver wavelength, as the ponderomotive potential scales quadratically with wavelength. If properly scaled in energy to multi-mJ level and few-cycle duration, such pulses provide a direct path to intriguing attoscience experiments in gases and solids, which even permit the realization of bright coherent table-top HHG sources in the water-window and keV X-ray region. However, the generation of high-intensity long-wavelength MIR pulses has always remained challenging, in particular starting from high-energy picosecond 2-μm laser driver, that is suitable for further energy scaling of the MIR pulses to multi-mJ energies by utilizing optical parametric amplifiers (OPAs). In this thesis, a front-end source for such MIR OPA is presented. In particular, a novel and robust strong-field few-cycle 2-μm laser driver directly from picosecond Ho:YLF laser and utilizing Kagome fiber based compression is presented. We achieved: a 70-fold compression of 140-μJ, 3.3-ps pulses from Ho:YLF amplifier to 48 fs with 11 μJ energy. The work presented in this thesis demonstrates a straightforward path towards generation of few-cycle MIR pulses and we believe that in the future the ultrafast community will benefit from this enabling technology. The results are summarized in mainly four parts: The first part is focused on the development of a 2-μm, high-energy laser source as the front-end. Comparison of available technology in general and promising gain media at MIR wavelength are discussed. Starting from the basics of an OPA, the design criteria

Few-cycle high energy mid-infrared pulse from Ho:YLF laser

Energy Technology Data Exchange (ETDEWEB)

Murari, Krishna

2017-04-15

Over the past decade, development of high-energy ultrafast laser sources has led to important breakthroughs in attoscience and strong-field physics study in atoms and molecules. Coherent pulse synthesis of few-cycle high-energy laser pulse is a promising tool to generate isolated attosecond pulses via high harmonics generation (HHG). An effective way to extend the HHG cut-off energy to higher values is making use of long mid-infrared (MIR) driver wavelength, as the ponderomotive potential scales quadratically with wavelength. If properly scaled in energy to multi-mJ level and few-cycle duration, such pulses provide a direct path to intriguing attoscience experiments in gases and solids, which even permit the realization of bright coherent table-top HHG sources in the water-window and keV X-ray region. However, the generation of high-intensity long-wavelength MIR pulses has always remained challenging, in particular starting from high-energy picosecond 2-μm laser driver, that is suitable for further energy scaling of the MIR pulses to multi-mJ energies by utilizing optical parametric amplifiers (OPAs). In this thesis, a front-end source for such MIR OPA is presented. In particular, a novel and robust strong-field few-cycle 2-μm laser driver directly from picosecond Ho:YLF laser and utilizing Kagome fiber based compression is presented. We achieved: a 70-fold compression of 140-μJ, 3.3-ps pulses from Ho:YLF amplifier to 48 fs with 11 μJ energy. The work presented in this thesis demonstrates a straightforward path towards generation of few-cycle MIR pulses and we believe that in the future the ultrafast community will benefit from this enabling technology. The results are summarized in mainly four parts: The first part is focused on the development of a 2-μm, high-energy laser source as the front-end. Comparison of available technology in general and promising gain media at MIR wavelength are discussed. Starting from the basics of an OPA, the design criteria

Applications of a Mid-IR Quantum Cascade Laser in Gas Sensing Research

KAUST Repository

Sajid, Muhammad Bilal

2015-05-01

Laser absorption based sensors are extensively used in a variety of gas sensing areas such as combustion, atmospheric research, human breath analysis, and high resolution infrared spectroscopy. Quantum cascade lasers have recently emerged as high resolution, high power laser sources operating in mid infrared region and can have wide tunability range. These devices provide an opportunity to access stronger fundamental and combination vibrational bands located in mid infrared region than previously accessible weaker overtone vibrational bands located in near infrared region. Spectroscopic region near 8 µm contains strong vibrational bands of methane, acetylene, hydrogen peroxide, water vapor and nitrous oxide. These molecules have important applications in a wide range of applications. This thesis presents studies pertaining to spectroscopy and combustion applications. Advancements in combustion research are imperative to achieve lower emissions and higher efficiency in practical combustion devices such as gas turbines and engines. Accurate chemical kinetic models are critical to achieve predictive models which contain several thousand reactions and hundreds of species. These models need highly reliable experimental data for validation and improvements. Shock tubes are ideal devices to obtain such information. A shock tube is a homogenous, nearly constant volume, constant pressure, adiabatic and 0-D reactor. In combination with laser absorption sensors, shock tubes can be used to measure reaction rates and species time histories of several intermediates and products formed during pyrolysis and oxidation of fuels. This work describes measurement of the decomposition rate of hydrogen peroxide which is an important intermediate species controlling reactivity of combustion system in the intermediate temperature range. Spectroscopic parameters (linestrengths, broadening coefficients and temperature dependent coefficients) are determined for various transitions of

The pursuit of electrically-driven organic semiconductor lasers

NARCIS (Netherlands)

Bisri, Satria Zulkarnaen; Takenobu, Taishi; Iwasa, Yoshihiro

2014-01-01

Organic semiconductors have many favourable and plastic-like optical properties that are promising for the development of low energy consuming laser devices. Although optically-pumped organic semiconductor lasers have been demonstrated since the early days of lasers, electrically-driven organic

Semiconductor Laser Multi-Spectral Sensing and Imaging

Directory of Open Access Journals (Sweden)

Han Q. Le

2010-01-01

Full Text Available Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO. These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

Semiconductor laser multi-spectral sensing and imaging.

Science.gov (United States)

Le, Han Q; Wang, Yang

2010-01-01

Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO). These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

Laser vapor phase deposition of semiconductors

Energy Technology Data Exchange (ETDEWEB)

Karlov, N.V.; Luk' ianchuk, B.S.; Sisakian, E.V.; Shafeev, G.A.

1987-06-01

The pyrolytic effect of IR laser radiation is investigated with reference to the initiation and control of the vapor phase deposition of semiconductor films. By selecting the gas mixture composition and laser emission parameters, it is possible to control the deposition and crystal formation processes on the surface of semiconductors, with the main control action achieved due to the nonadiabatic kinetics of reactions in the gas phase and high temperatures in the laser heating zone. This control mechanism is demonstrated experimentally during the laser vapor deposition of germanium and silicon films from tetrachlorides on single-crystal Si and Ge substrates. 5 references.

Narrowband widely tunable CW mid-infrared generator based on difference frequency generation in periodically poled KTP and KTA crystals

Czech Academy of Sciences Publication Activity Database

Baravets, Yauhen; Honzátko, Pavel; Todorov, Filip; Gladkov, Petar

2016-01-01

Roč. 48, č. 5 (2016), May ISSN 0306-8919 R&D Projects: GA MŠk LD14112 Grant - others:COST(XE) MP1204 Institutional support: RVO:67985882 Keywords : Fiber optics amplifiers * Difference-frequency generation * Mid-infrared tunable laser source Subject RIV: BH - Optics , Masers, Lasers Impact factor: 1.055, year: 2016

Modelling colliding-pulse mode-locked semiconductor lasers

DEFF Research Database (Denmark)

Bischoff, Svend

or to determine the optimum operation conditions. The purpose of this thesis is to elucidate some of the physics of interest in the field of semiconductor laser modelling, semiconductor optics and fiber optics. To be more specific we will investigate: The Colliding-Pulse Mode-Locked (CPM) Quantum Well (QW) laser...... diode; the excitonic semiconductor response for varying material thickness in the case of linear optics; and modulational instability of electromagnetic waves in media with spatially varying non-linearity....

Mid infrared LHS system packaging using flexible waveguides

Science.gov (United States)

Yu, Chung

1987-01-01

As mid IR fiber optic systems are rapidly approaching a reality, so is the feasibility of fiber optic laser heterodyne systems. Laser heterodyne spectroscopy for high resolution monitoring of atmospheric gaseous pollutants is necessarily in the mid IR, the region in which the absorption signature of gaseous species is most prominent. It so happens that the lowest theoretical loss due to Rayleigh-Brillouin scattering also lies in the mid IR. Prospects of highly efficient laser heterodyne systems are thus very good. Such fibers are now beginning to be commercially available, and a test program is being conducted for such fibers with ambient temperature ranging from cryogenic to above room, and stringest mechanical flexibility requirements. Preliminary results are encouraging. A program is being started to explore the possibility of mid IR fiber optic device applications, by taking advantage of this phonon rich region. The potential long interaction length in fibers coupled with predicted extremely low losses point to stimulated Brillouin scattering based devices in the mW range. The generation of backscattered sBs at low laser powers is significant not only as an ultimate power limiting factor for laser transmission in fibers in the mid IR, but also the presence of frequency-shifted multiple order sBs Stokes and antiStokes lines will certainly have severe effect on the laser beats crucial in high resolution heterodyne spectroscopy.

Mid infrared resonant cavity detectors and lasers with epitaxial lead-chalcogenides

Science.gov (United States)

Zogg, H.; Rahim, M.; Khiar, A.; Fill, M.; Felder, F.; Quack, N.

2010-09-01

Wavelength tunable emitters and detectors in the mid-IR wavelength region allow applications including thermal imaging and gas spectroscopy. One way to realize such tunable devices is by using a resonant cavity. By mechanically changing the cavity length with MEMS mirror techniques, the wavelengths may be tuned over a considerable range. Resonant cavity enhanced detectors (RCED) are sensitive at the cavity resonance only. They may be applied for low resolution spectroscopy, and, when arrays of such detectors are realized, as multicolour IR-FPA or "IR-AFPA", adaptive focal plane arrays. We report the first room temperature mid-IR VECSEL (vertical external cavity surface emitting laser) with a wavelength above 3 μm. The active region is just 850 nm PbSe, followed by a 2.5 pair Bragg mirror. Output power is > 10 mW at RT.

Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices

Science.gov (United States)

Horn, Kevin M [Albuquerque, NM

2008-05-20

A broad-beam laser irradiation apparatus can measure the parametric or functional response of a semiconductor device to exposure to dose-rate equivalent infrared laser light. Comparisons of dose-rate response from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems can determine if aging has affected the device's overall functionality. The dependence of these changes on equivalent dose-rate pulse intensity and/or duration can be measured with the apparatus. The synchronized introduction of external electrical transients into the device under test can be used to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure while exposing the device to dose-rate equivalent infrared laser light.

Mid-infrared emissions of Pr{sup 3+}-doped GeS{sub 2}–Ga{sub 2}S{sub 3}–CdI{sub 2} chalcohalide glasses

Energy Technology Data Exchange (ETDEWEB)

Lu, Chunfeng [State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and precision Mechanics, Chinese Academy of Science (CAS), Xi’an, Shaanxi 710119 (China); Guo, Haitao, E-mail: guoht_001@opt.ac.cn [State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and precision Mechanics, Chinese Academy of Science (CAS), Xi’an, Shaanxi 710119 (China); Xu, Yantao; Hou, Chaoqi; Lu, Min [State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and precision Mechanics, Chinese Academy of Science (CAS), Xi’an, Shaanxi 710119 (China); He, Xin [School of Applied Physics and Materials, Wuyi University, Jiangmen, Guangdong 529020 (China); Wang, Pengfei; Li, Weinan [State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and precision Mechanics, Chinese Academy of Science (CAS), Xi’an, Shaanxi 710119 (China); Peng, Bo, E-mail: bpeng@opt.ac.cn [State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and precision Mechanics, Chinese Academy of Science (CAS), Xi’an, Shaanxi 710119 (China)

2014-12-15

Graphical abstract: ∼4.6 μm mid-infrared fluorescence emission from Pr{sup 3+} in the sulfide glass is successfully observed at room temperature excited by a 2.01 μm Tm{sup 3+}:YAG ceramic laser system. - Highlights: • Serial Pr{sup 3+}-doped GeS{sub 2}–Ga{sub 2}S{sub 3}–CdI{sub 2} chalcohalide glasses were synthesized. • ∼4.6 μm mid-infrared fluorescence from Pr{sup 3+} was observed at room temperature. • The compositional dependence of luminescence properties was studied. • Radiative properties have been determined using the Judd–Ofelt theory. - Abstract: For elucidation of the glass composition’s influence on the spectroscopic properties in the chalcohalide system and the discovery of a new material for applications in mid-infrared fiber-lasers, a serial Pr{sup 3+}-doped (100 − x)(0.8GeS{sub 2}·0.2Ga{sub 2}S{sub 3})xCdI{sub 2} (x = 5, 10, 15 and 20) chalcohalide glasses were prepared. ∼4.6 μm mid-infrared fluorescence emission from Pr{sup 3+} in the sulfide glass is successfully observed at room temperature excited by a 2.01 μm Tm{sup 3+}:YAG ceramic laser system, and the effective line-width of fluorescence band is 106–227 nm. Intense compositional dependence of mid-infrared emissions is found. The radiative rates of Pr{sup 3+} ions in these glasses were calculated by using the Judd–Ofelt theory.

Room-temperature mid-infrared single-photon imaging using upconversion

DEFF Research Database (Denmark)

Dam, Jeppe Seidelin; Tidemand-Lichtenberg, Peter; Pedersen, Christian

2014-01-01

The mid-wave infrared (MWIR) region is a fast developing research area due to many possible applications. Indeed a lot of research has been put into the development of novel light sources in the MWIR. This has led to very powerful sources such as quantum cascade lasers (QCL) and optical parametric...... detectors, when compared to silicon based detectors available for the visible and near visible spectral range. In fact, camera sensitivities down to the single photon level have been developed for sub-μm wavelengths. This discrepancy in sensitivity makes it attractive to perform wavelength upconversion...... upconversion efficiencies of 20 % for polarized collinear MWIR light. To make the module truly portable the laser cavity is assembled in a closed mechanical unit which ensures that visible light cannot enter from the outside, and provides a very stable mount for the optical components. Figure 1 depicts...

Two-crystal mid-infrared optical parametric oscillator for absorption and dispersion dual-comb spectroscopy.

Science.gov (United States)

Jin, Yuwei; Cristescu, Simona M; Harren, Frans J M; Mandon, Julien

2014-06-01

We present a femtosecond optical parametric oscillator (OPO) containing two magnesium-doped periodically poled lithium niobate crystals in a singly resonant ring cavity, pumped by two mode-locked Yb-fiber lasers. As such, the OPO generates two idler combs (up to 220 mW), covering a wavelength range from 2.7 to 4.2 μm, from which a mid-infrared dual-comb Fourier transform spectrometer is constructed. By detecting the heterodyning signal between the two idler beams a full broadband spectrum of a molecular gas can be observed over 250  cm(-1) within 70 μs with a spectral resolution of 15 GHz. The absorption and dispersion spectra of acetylene and methane have been measured around 3000  cm(-1), indicating that this OPO represents an ideal broadband mid-infrared source for fast chemical sensing.

Effect of gain nonlinearity in semiconductor lasers

DEFF Research Database (Denmark)

Jensen, Niels H.; Christiansen, Peter Leth; Skovgaard, Ove

1988-01-01

Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensi......Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2...

Mid-infrared photonics in silicon and germanium

Science.gov (United States)

Soref, Richard

2010-08-01

Ingenious techniques are needed to extend group IV photonics from near-infrared to mid-infrared wavelengths. If achieved, the reward could be on-chip CMOS optoelectronic systems for use in spectroscopy, chemical and biological sensing, and free-space communications.

Key techniques for space-based solar pumped semiconductor lasers

Science.gov (United States)

He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

2014-12-01

In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

Theory of semiconductor laser cooling

Science.gov (United States)

Rupper, Greg

Recently laser cooling of semiconductors has received renewed attention, with the hope that a semiconductor cooler might be able to achieve cryogenic temperatures. In order to study semiconductor laser cooling at cryogenic temperatures, it is crucial that the theory include both the effects of excitons and the electron-hole plasma. In this dissertation, I present a theoretical analysis of laser cooling of bulk GaAs based on a microscopic many-particle theory of absorption and luminescence of a partially ionized electron-hole plasma. This theory has been analyzed from a temperature 10K to 500K. It is shown that at high temperatures (above 300K), cooling can be modeled using older models with a few parameter changes. Below 200K, band filling effects dominate over Auger recombination. Below 30K excitonic effects are essential for laser cooling. In all cases, excitonic effects make cooling easier then predicted by a free carrier model. The initial cooling model is based on the assumption of a homogeneous undoped semiconductor. This model has been systematically modified to include effects that are present in real laser cooling experiments. The following modifications have been performed. (1) Propagation and polariton effects have been included. (2) The effect of p-doping has been included. (n-doping can be modeled in a similar fashion.) (3) In experiments, a passivation layer is required to minimize non-radiative recombination. The passivation results in a npn heterostructure. The effect of the npn heterostructure on cooling has been analyzed. (4) The effect of a Gaussian pump beam was analyzed and (5) Some of the parameters in the cooling model have a large uncertainty. The effect of modifying these parameters has been analyzed. Most of the extensions to the original theory have only had a modest effect on the overall results. However we find that the current passivation technique may not be sufficient to allow cooling. The passivation technique currently used appears

High power frequency comb based on mid-infrared quantum cascade laser at λ ∼ 9 μm

International Nuclear Information System (INIS)

Lu, Q. Y.; Razeghi, M.; Slivken, S.; Bandyopadhyay, N.; Bai, Y.; Zhou, W. J.; Chen, M.; Heydari, D.; Haddadi, A.; McClintock, R.; Amanti, M.; Sirtori, C.

2015-01-01

We investigate a frequency comb source based on a mid-infrared quantum cascade laser at λ ∼ 9 μm with high power output. A broad flat-top gain with near-zero group velocity dispersion has been engineered using a dual-core active region structure. This favors the locking of the dispersed Fabry-Pérot modes into equally spaced frequency lines via four wave mixing. A current range with a narrow intermode beating linewidth of 3 kHz is identified with a fast detector and spectrum analyzer. This range corresponds to a broad spectral coverage of 65 cm −1 and a high power output of 180 mW for ∼176 comb modes

Mid-infrared supercontinuum generation in the fingerprint region

DEFF Research Database (Denmark)

Møller, Uffe Visbech; Petersen, Christian Rosenberg; Kubat, Irnis

The mid-infrared spectral region is of great technical and scientific interest because most molecules display fundamental vibrational absorptions in this region, leaving distinctive spectral fingerprints. Here, we demonstrate experimentally that launching intense ultra-short pulses with a central...... the potential of fibres to emit across the mid-infrared molecular fingerprint region, which is of key importance for applications such as early cancer diagnostics, gas sensing and food quality control....

Controlling the emission wavelength in group III-V semiconductor laser diodes

KAUST Repository

Ooi, Boon S.

2016-12-29

Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

Recent advances of mid-infrared compact, field deployable sensors: principles and applications

Science.gov (United States)

Tittel, Frank; Gluszek, Aleksander; Hudzikowski, Arkadiusz; Dong, Lei; Li, Chunguang; Patimisco, Pietro; Sampaolo, Angelo; Spagnolo, Vincenzo; Wojtas, Jacek

2016-04-01

The recent development of compact interband cascade lasers(ICLs) and quantum cascade lasers (QCLs) based trace gas sensors will permit the targeting of strong fundamental rotational-vibrational transitions in the mid-infrared which are one to two orders of magnitude more intense than transitions in the overtone and combination bands in the near-infrared. This has led to the design and fabrication of mid-infrared compact, field deployable sensors for use in the petrochemical industry, environmental monitoring and atmospheric chemistry. Specifically, the spectroscopic detection and monitoring of four molecular species, methane (CH4) [1], ethane (C2H6), formaldehyde (H2CO) [2] and hydrogen sulphide (H2S) [3] will be described. CH4, C2H6 and H2CO can be detected using two detection techniques: mid-infrared tunable laser absorption spectroscopy (TDLAS) using a compact multi-pass gas cell and quartz enhanced photoacoustic spectroscopy (QEPAS). Both techniques utilize state-of-the-art mid-IR, continuous wave (CW), distributed feedback (DFB) ICLs and QCLs. TDLAS was performed with an ultra-compact 54.6m effective optical path length innovative spherical multipass gas cell capable of 435 passes between two concave mirrors separated by 12.5 cm. QEPAS used a small robust absorption detection module (ADM) which consists of a quartz tuning fork (QTF), two optical windows, gas inlet/outlet ports and a low noise frequency pre-amplifier. Wavelength modulation and second harmonic detection were employed for spectral data processing. TDLAS and QEPAS can achieve minimum detectable absorption losses in the range from 10-8 to 10-11cm-1/Hz1/2. Several recent examples of real world applications of field deployable gas sensors will be described. For example, an ICL based TDLAS sensor system is capable of detecting CH4 and C2H6 concentration levels of 1 ppb in a 1 sec. sampling time, using an ultra-compact, robust sensor architecture. H2S detection was realized with a THz QEPAS sensor

Comprehensive and fully self-consistent modeling of modern semiconductor lasers

International Nuclear Information System (INIS)

Nakwaski, W.; Sarzał, R. P.

2016-01-01

The fully self-consistent model of modern semiconductor lasers used to design their advanced structures and to understand more deeply their properties is given in the present paper. Operation of semiconductor lasers depends not only on many optical, electrical, thermal, recombination, and sometimes mechanical phenomena taking place within their volumes but also on numerous mutual interactions between these phenomena. Their experimental investigation is quite complex, mostly because of miniature device sizes. Therefore, the most convenient and exact method to analyze expected laser operation and to determine laser optimal structures for various applications is to examine the details of their performance with the aid of a simulation of laser operation in various considered conditions. Such a simulation of an operation of semiconductor lasers is presented in this paper in a full complexity of all mutual interactions between the above individual physical processes. In particular, the hole-burning effect has been discussed. The impacts on laser performance introduced by oxide apertures (their sizes and localization) have been analyzed in detail. Also, some important details concerning the operation of various types of semiconductor lasers are discussed. The results of some applications of semiconductor lasers are shown for successive laser structures. (paper)

Monolithic beam steering in a mid-infrared, surface-emitting, photonic integrated circuit.

Science.gov (United States)

Slivken, Steven; Wu, Donghai; Razeghi, Manijeh

2017-08-16

The mid-infrared (2.5 < λ < 25 μm) spectral region is utilized for many purposes, such as chemical/biological sensing, free space communications, and illuminators/countermeasures. Compared to near-infrared optical systems, however, mid-infrared component technology is still rather crude, with isolated components exhibiting limited functionality. In this manuscript, we make a significant leap forward in mid-infrared technology by developing a platform which can combine functions of multiple mid-infrared optical elements, including an integrated light source. In a single device, we demonstrate wide wavelength tuning (240 nm) and beam steering (17.9 degrees) in the mid-infrared with a significantly reduced beam divergence (down to 0.5 degrees). The architecture is also set up to be manufacturable and testable on a wafer scale, requiring no cleaved facets or special mirror coating to function.

Absorption Spectroscopy in Hollow-Glass Waveguides Using Infrared Diode Lasers[4817-25

International Nuclear Information System (INIS)

Blake, Thomas A.; Kelly, James F.; Stewart, Timothy L.; Hartman, John S.; Sharpe, Steven W.; Sams, Robert L.; Alan Fried

2002-01-01

Near- and mid-infrared diode lasers combined with flexible, hollow waveguides hold the promise of light weight, field portable, fast response gas sensors. The advantages of using the waveguides compared to White or Herriott multireflection cells include a small gas volume, a high photon fill factor in the waveguide, which increases molecule-light interactions, and reduction or elimination of optical fringing, which usually sets the practical limit of detectivity in absorption spectroscopy. Though hollow waveguides have been commercially available for several years, relatively few results have been reported in the literature. We present here results from our laboratory where we have injected infrared laser light into straight and coiled lengths of hollow waveguides and performed direct and wavelength modulated absorption spectroscopy on nitrous oxide, ethylene, and nitric oxide. Using a 1 mm bore, 3 meter long coiled waveguide coated for the near infrared, nitrous oxide transitions near 6595 cm-1 were observed under flowing conditions. Signal-to-noise ratios on the order of 1500:1 with RMS noise equal to 2 X 10-5 were measured. In the mid-infrared light from either a 10.1 or 5.3 micron lead salt diode laser was injected into a three meter length of 1 mm bore hollow waveguide coated for the mid-infrared. The waveguide was coiled with one loop at a diameter of 52 cm. Ethylene transitions were observed in the vicinity of 985 cm-1 with a static fill of 0.2 Torr of pure ethylene in the waveguide and nitric oxide transitions were observed in the vicinity of 1906 cm-1 using either a flow or a static fill of 1 ppm NO in nitrogen. In direct absorption the NO transitions are observed to have a signal-to-noise of approximately 5:1 for transitions with absorbances on the order of 10-3. Using wavelength modulated techniques the signal-to-noise ratio improves at least an order of magnitude. These encouraging results indicate that waveguides can be used for in situ gas monitoring

The Modulation Response of a Semiconductor Laser Amplifier

DEFF Research Database (Denmark)

Mørk, Jesper; Mecozzi, Antonio; Eisenstein, Gadi

1999-01-01

We present a theoretical analysis of the modulation response of a semiconductor laser amplifier. We find a resonance behavior similar to the well-known relaxation oscillation resonance found in semiconductor lasers, but of a different physical origin. The role of the waveguide (scattering) loss i...

Characterization of a novel miniaturized burst-mode infrared laser system for IR-MALDESI mass spectrometry imaging.

Science.gov (United States)

Ekelöf, Måns; Manni, Jeffrey; Nazari, Milad; Bokhart, Mark; Muddiman, David C

2018-03-01

Laser systems are widely used in mass spectrometry as sample probes and ionization sources. Mid-infrared lasers are particularly suitable for analysis of high water content samples such as animal and plant tissues, using water as a resonantly excited sacrificial matrix. Commercially available mid-IR lasers have historically been bulky and expensive due to cooling requirements. This work presents a novel air-cooled miniature mid-IR laser with adjustable burst-mode output and details an evaluation of its performance for mass spectrometry imaging. The miniature laser was found capable of generating sufficient energy for complete ablation of animal tissue in the context of an IR-MALDESI experiment with exogenously added ice matrix, yielding several hundred confident metabolite identifications. Graphical abstract The use of a novel miniature 2.94 μm burst-mode laser in IR-MALDESI allows for rapid and sensitive mass spectrometry imaging of a whole mouse.

Infrared technique for decoding of invisible laser markings

Science.gov (United States)

Haferkamp, Heinz; Jaeschke, Peter; Stein, Johannes; Goede, Martin

2002-03-01

Counterfeiting and product piracy continues to be an important issue not only for the Western industry, but also for the society in general. Due to the drastic increase in product imitation and the request for plagiarism protection as well as for reducing thefts there is a high interest in new protection methods providing new security features. The method presented here consists of security markings which are included below paint layers. These markings are invisible for the human eye due to the non-transparency of the upper layers in the visible spectral range. However, the markings can be detected by an infrared technique taking advantage on the partial transparency of the upper paint layers in the IR-region. Metal sheets are marked using laser radiation. The beam of a Nd:YAG-laser provides a modification of the surface structure, resulting in dark markings due to the annealing effect. After coating of the laser-marked material, the markings are invisible for the bare eye. In order to read out the invisible information below the coating, an infrared reflection technique is used. The samples are illuminated with halogen lamps or infrared radiators. Many coating materials (i. e. paints) show a certain transparency in the mid-infrared region, especially between 3 - 5 micrometers . The reflected radiation is detected using an IR-camera with a sensitivity range from 3.4 - 5 micrometers . Due to the different reflection properties between the markings and their surrounding, the information can be detected.

Mid-infrared 1  W hollow-core fiber gas laser source.

Science.gov (United States)

Xu, Mengrong; Yu, Fei; Knight, Jonathan

2017-10-15

We report the characteristics of a 1 W hollow-core fiber gas laser emitting CW in the mid-IR. Our system is based on an acetylene-filled hollow-core optical fiber guiding with low losses at both the pump and laser wavelengths and operating in the single-pass amplified spontaneous emission regime. Through systematic characterization of the pump absorption and output power dependence on gas pressure, fiber length, and pump intensity, we determine that the reduction of pump absorption at high pump flux and the degradation of gain performance at high gas pressure necessitate the use of increased gain fiber length for efficient lasing at higher powers. Low fiber attenuation is therefore key to efficient high-power laser operation. We demonstrate 1.1 W output power at a 3.1 μm wavelength by using a high-power erbium-doped fiber amplifier pump in a single-pass configuration, approximately 400 times higher CW output power than in the ring cavity previously reported.

Below-bandgap photoreflection spectroscopy of semiconductor laser structures

International Nuclear Information System (INIS)

Sotnikov, Aleksandr E; Chernikov, Maksim A; Ryabushkin, Oleg A; Trubenko, P; Moshegov, N; Ovchinnikov, A

2004-01-01

A new method of modulated light reflection - below-bandgap photoreflection, is considered. Unlike the conventional photoreflection method, the proposed method uses optical pumping by photons of energy smaller than the bandgap of any layer of a semiconductor structure under study. Such pumping allows one to obtain the modulated reflection spectrum for all layers of the structure without excitation of photoluminescence. This method is especially promising for the study of wide-gap semiconductors. The results of the study of semiconductor structures used in modern high-power multimode semiconductor lasers are presented. (laser applications and other topics in quantum electronics)

Spherical distribution structure of the semiconductor laser diode stack for pumping

International Nuclear Information System (INIS)

Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei

2011-01-01

A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere, and the output of every bar is specially off-axis compressed to realize high coupling efficiency. The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium. The efficiency of the hollow light pipe, which is used for semiconductor laser diode stack coupling, is analyzed by geometric optics and ray tracing. Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure. Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system, and guides parameter optimization. Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution. (semiconductor devices)

Interband cascade laser-based ppbv-level mid-infrared methane detection using two digital lock-in amplifier schemes

Science.gov (United States)

Song, Fang; Zheng, Chuantao; Yu, Di; Zhou, Yanwen; Yan, Wanhong; Ye, Weilin; Zhang, Yu; Wang, Yiding; Tittel, Frank K.

2018-03-01

A parts-per-billion in volume (ppbv) level mid-infrared methane (CH4) sensor system was demonstrated using second-harmonic wavelength modulation spectroscopy (2 f-WMS). A 3291 nm interband cascade laser (ICL) and a multi-pass gas cell (MPGC) with a 16 m optical path length were adopted in the reported sensor system. Two digital lock-in amplifier (DLIA) schemes, a digital signal processor (DSP)-based DLIA and a LabVIEW-based DLIA, were used for harmonic signal extraction. A limit of detection (LoD) of 13.07 ppbv with an averaging time of 2 s was achieved using the DSP-based DLIA and a LoD of 5.84 ppbv was obtained using the LabVIEW-based DLIA with the same averaging time. A rise time of 0→2 parts-per-million in volume (ppmv) and fall time of 2→0 ppmv were observed. Outdoor atmospheric CH4 concentration measurements were carried out to evaluate the sensor performance using the two DLIA schemes.

High power frequency comb based on mid-infrared quantum cascade laser at λ ∼ 9 μm

Energy Technology Data Exchange (ETDEWEB)

Lu, Q. Y.; Razeghi, M., E-mail: razeghi@eecs.northwestern.edu; Slivken, S.; Bandyopadhyay, N.; Bai, Y.; Zhou, W. J.; Chen, M.; Heydari, D.; Haddadi, A.; McClintock, R. [Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States); Amanti, M.; Sirtori, C. [Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Diderot and CNRS, UMR7162, 75205 Paris (France)

2015-02-02

We investigate a frequency comb source based on a mid-infrared quantum cascade laser at λ ∼ 9 μm with high power output. A broad flat-top gain with near-zero group velocity dispersion has been engineered using a dual-core active region structure. This favors the locking of the dispersed Fabry-Pérot modes into equally spaced frequency lines via four wave mixing. A current range with a narrow intermode beating linewidth of 3 kHz is identified with a fast detector and spectrum analyzer. This range corresponds to a broad spectral coverage of 65 cm{sup −1} and a high power output of 180 mW for ∼176 comb modes.

Recent advances in mid-infrared (3--6 micron) emitters

Energy Technology Data Exchange (ETDEWEB)

Biefeld, R.M.; Allerman, A.A.; Kurtz, S.R.

1997-06-01

The authors describe the metal-organic chemical vapor deposition (MOCVD) of InAsSb/InAs multiple quantum well (MQW) and InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. They have made gain-guided, injection lasers using undoped, p-type AlAs{sub 0.16}Sb{sub 0.84} for optical confinement and both strained InAsSb/InAs MQW and InAsSb/InAsP SLS active regions. The lasers and LEDs utilize the semi-metal properties of a p-GaAsSb/n-InAs heterojunction as a source for electrons injected into active regions. A multiple-stage LED utilizing this semi-metal injection scheme is reported. Gain-guided, injected lasers with a strained InAsSb/InAs MQW active region operated up to 210 K in pulsed mode with an emission wavelength of 3.8--3.9 {micro}m and a characteristic temperature of 29--40 K. They also present results for both optically pumped and injection lasers with InAsSb/InAsP SLS active regions. The maximum operating temperature of an optically pumped 3.7 {micro}m SLS laser was 240 K. An SLS LED emitted at 4.0 {micro}m with 80 {micro}W of power at 300 K.

Fault localization and analysis in semiconductor devices with optical-feedback infrared confocal microscopy

International Nuclear Information System (INIS)

Sarmiento, Raymund; Cemine, Vernon Julius; Tagaca, Imee Rose; Salvador, Arnel; Mar Blanca, Carlo; Saloma, Caesar

2007-01-01

We report on a cost-effective optical setup for characterizing light-emitting semiconductor devices with optical-feedback confocal infrared microscopy and optical beam-induced resistance change.We utilize the focused beam from an infrared laser diode to induce local thermal resistance changes across the surface of a biased integrated circuit (IC) sample. Variations in the multiple current paths are mapped by scanning the IC across the focused beam. The high-contrast current maps allow accurate differentiation of the functional and defective sites, or the isolation of the surface-emittingp-i-n devices in the IC. Optical beam-induced current (OBIC) is not generated since the incident beam energy is lower than the bandgap energy of the p-i-n device. Inhomogeneous current distributions in the IC become apparent without the strong OBIC background. They are located at a diffraction-limited resolution by referencing the current maps against the confocal reflectance image that is simultaneously acquired via optical-feedback detection. Our technique permits the accurate identification of metal and semiconductor sites as well as the classification of different metallic structures according to thickness, composition, or spatial inhomogeneity

Towards filament free semiconductor lasers

DEFF Research Database (Denmark)

McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

2000-01-01

We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

Low-Loss Hollow Waveguide Fibers for Mid-Infrared Quantum Cascade Laser Sensing Applications

Directory of Open Access Journals (Sweden)

James A. Harrington

2013-01-01

Full Text Available We report on single mode optical transmission of hollow core glass waveguides (HWG coupled with an external cavity mid-IR quantum cascade lasers (QCLs. The QCL mode results perfectly matched to the hybrid HE11 waveguide mode and the higher losses TE-like modes have efficiently suppressed by the deposited inner dielectric coating. Optical losses down to 0.44 dB/m and output beam divergence of ~5 mrad were measured. Using a HGW fiber with internal core size of 300 µm we obtained single mode laser transmission at 10.54 µm and successful employed it in a quartz enhanced photoacoustic gas sensor setup.

Mid-infrared Variability of Changing-look AGNs

International Nuclear Information System (INIS)

Sheng, Zhenfeng; Wang, Tinggui; Jiang, Ning; Yang, Chenwei; Peng, Bo; Yan, Lin; Dou, Liming

2017-01-01

It is known that some active galactic nuclei (AGNs) transit from Type 1 to Type 2 or vice versa. There are two explanations for the so-called changing-look AGNs: one is the dramatic change of the obscuration along the line of sight, and the other is the variation of accretion rate. In this Letter, we report the detection of large amplitude variations in the mid-infrared luminosity during the transitions in 10 changing-look AGNs using the Wide-field Infrared Survey Explorer ( WISE ) and newly released Near-Earth Object WISE Reactivation data. The mid-infrared light curves of 10 objects echo the variability in the optical band with a time lag expected for dust reprocessing. The large variability amplitude is inconsistent with the scenario of varying obscuration, rather it supports the scheme of dramatic change in the accretion rate.

Mid-infrared Variability of Changing-look AGNs

Energy Technology Data Exchange (ETDEWEB)

Sheng, Zhenfeng; Wang, Tinggui; Jiang, Ning; Yang, Chenwei; Peng, Bo [CAS Key Laboratory for Researches in Galaxies and Cosmology, University of Sciences and Technology of China, Hefei, Anhui 230026 (China); Yan, Lin [Caltech Optical Observatories, Cahill Center for Astronomy and Astrophysics, California Institute of Technology, Pasadena, CA 91125 (United States); Dou, Liming, E-mail: shengzf@mail.ustc.edu.cn, E-mail: twang@ustc.edu.cn [Center for Astrophysics, Guangzhou University, Guangzhou 510006 (China)

2017-09-01

It is known that some active galactic nuclei (AGNs) transit from Type 1 to Type 2 or vice versa. There are two explanations for the so-called changing-look AGNs: one is the dramatic change of the obscuration along the line of sight, and the other is the variation of accretion rate. In this Letter, we report the detection of large amplitude variations in the mid-infrared luminosity during the transitions in 10 changing-look AGNs using the Wide-field Infrared Survey Explorer ( WISE ) and newly released Near-Earth Object WISE Reactivation data. The mid-infrared light curves of 10 objects echo the variability in the optical band with a time lag expected for dust reprocessing. The large variability amplitude is inconsistent with the scenario of varying obscuration, rather it supports the scheme of dramatic change in the accretion rate.

Multispectral mid-infrared imaging using frequency upconversion

DEFF Research Database (Denmark)

Sanders, Nicolai Højer; Dam, Jeppe Seidelin; Jensen, Ole Bjarlin

2013-01-01

It has recently been shown that it is possible to upconvert infrared images to the near infrared region with high quantum efficiency and low noise by three-wave mixing with a laser field [1]. If the mixing laser is single-frequency, the upconverted image is simply a band-pass filtered version...... parameter, allowing for fast tuning and hence potentially fast image acquisition, paving the way for upconversion based real time multispectral imaging. In the present realization the upconversion module consists of an external cavity tapered diode laser in a Littrow configuration with a computer controlled...

Mass Spectrometric Fingerprinting of Tank Waste Using Tunable, Ultrafast Infrared Lasers

International Nuclear Information System (INIS)

Richard Haglund Jr.

2002-01-01

The principal scientific thrust of this project was to demonstrate a novel method for precision matrix-assisted laser desorption-ionization (MALDI) mass spectrometry (MS) of model tank-waste materials using, using the sodium nitrate component of the tank waste both as the matrix and as an internal calibration standard. Conventional nanosecond and femtosecond single-frequency lasers and a tunable, mid-infrared free-electron laser were used in the development of the MS protocols and in measurements of the MALDI dynamics. In addition to developing a model of the processes which lead to efficient desorption and ionization of organic molecules (e.g., toluene, benzene, chelators, various organic acids, crown ethers) from sodium nitrate, we developed protocols for quantitative analysis based on the use of the sodium nitrate in tank waste as an internal standard. Comparisons of MALDI-MS using nanosecond and picosecond lasers, and of infrared and ultraviolet lasers, have been especially instructive, and demonstrate the superior potential of IR-MALDI for this purpose, as well as for a number of related analytical and thin-film applications

Heterogeneously integrated silicon photonics for the mid-infrared and spectroscopic sensing.

Science.gov (United States)

Chen, Yu; Lin, Hongtao; Hu, Juejun; Li, Mo

2014-07-22

Besides being the foundational material for microelectronics, crystalline silicon has long been used for the production of infrared lenses and mirrors. More recently, silicon has become the key material to achieve large-scale integration of photonic devices for on-chip optical interconnect and signal processing. For optics, silicon has significant advantages: it offers a very high refractive index and is highly transparent in the spectral range from 1.2 to 8 μm. To fully exploit silicon’s superior performance in a remarkably broad range and to enable new optoelectronic functionalities, here we describe a general method to integrate silicon photonic devices on arbitrary foreign substrates. In particular, we apply the technique to integrate silicon microring resonators on mid-infrared compatible substrates for operation in the mid-infrared. These high-performance mid-infrared optical resonators are utilized to demonstrate, for the first time, on-chip cavity-enhanced mid-infrared spectroscopic analysis of organic chemicals with a limit of detection of less than 0.1 ng.

Hybrid organic semiconductor lasers for bio-molecular sensing.

Science.gov (United States)

Haughey, Anne-Marie; Foucher, Caroline; Guilhabert, Benoit; Kanibolotsky, Alexander L; Skabara, Peter J; Burley, Glenn; Dawson, Martin D; Laurand, Nicolas

2014-01-01

Bio-functionalised luminescent organic semiconductors are attractive for biophotonics because they can act as efficient laser materials while simultaneously interacting with molecules. In this paper, we present and discuss a laser biosensor platform that utilises a gain layer made of such an organic semiconductor material. The simple structure of the sensor and its operation principle are described. Nanolayer detection is shown experimentally and analysed theoretically in order to assess the potential and the limits of the biosensor. The advantage conferred by the organic semiconductor is explained, and comparisons to laser sensors using alternative dye-doped materials are made. Specific biomolecular sensing is demonstrated, and routes to functionalisation with nucleic acid probes, and future developments opened up by this achievement, are highlighted. Finally, attractive formats for sensing applications are mentioned, as well as colloidal quantum dots, which in the future could be used in conjunction with organic semiconductors.

Mid-infrared integrated photonics on silicon: a perspective

Directory of Open Access Journals (Sweden)

Lin Hongtao

2017-12-01

Full Text Available The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR telecommunication bands, the mid-infrared (mid-IR, 2–20-μm wavelength band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

A High-Power Continuous-Wave Mid-Infrared Optical Parametric Oscillator Module

Directory of Open Access Journals (Sweden)

Yichen Liu

2017-12-01

Full Text Available We demonstrate here a compact optical parametric oscillator module for mid-infrared generation via nonlinear frequency conversion. This module weighs only 2.5 kg and fits within a small volume of 220 × 60 × 55 mm3. The module can be easily aligned to various pump laser sources, and here we use a 50 W ytterbium (Yb-doped fiber laser as an example. With a two-channel MgO-doped periodically poled lithium niobate crystal (MgO:PPLN, our module covers a tuning range of 2416.17–2932.25 nm and 3142.18–3452.15 nm. The highest output power exceeds 10.4 W at 2.7 μm, corresponding to a conversion efficiency of 24%. The measured power stability is 2.13% Root Meat Square (RMS for a 10 h duration under outdoor conditions.

Infrared laser-induced chemical reactions

International Nuclear Information System (INIS)

Katayama, Mikio

1978-01-01

The experimental means which clearly distinguishes between infrared ray-induced reactions and thermal reactions has been furnished for the first time when an intense monochromatic light source has been obtained by the development of infrared laser. Consequently, infrared laser-induced chemical reactions have started to develop as one field of chemical reaction researches. Researches of laser-induced chemical reactions have become new means for the researches of chemical reactions since they were highlighted as a new promising technique for isotope separation. Specifically, since the success has been reported in 235 U separation using laser in 1974, comparison of this method with conventional separation techniques from the economic point of view has been conducted, and it was estimated by some people that the laser isotope separation is cheaper. This report briefly describes on the excitation of oscillation and reaction rate, and introduces the chemical reactions induced by CW laser and TEA CO 2 laser. Dependence of reaction yield on laser power, measurement of the absorbed quantity of infrared ray and excitation mechanism are explained. Next, isomerizing reactions are reported, and finally, isotope separation is explained. It was found that infrared laser-induced chemical reactions have the selectivity for isotopes. Since it is evident that there are many examples different from thermal and photo-chemical reactions, future collection of the data is expected. (Wakatsuki, Y.)

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Science.gov (United States)

Pierścińska, D.

2018-01-01

This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

Conceptual thermal design and analysis of a far-infrared/mid-infrared remote sensing instrument

Science.gov (United States)

Roettker, William A.

1992-07-01

This paper presents the conceptual thermal design and analysis results for the Spectroscopy of the Atmosphere using Far-Infrared Emission (SAFIRE) instrument. SAFIRE has been proposed for Mission to Planet Earth to study ozone chemistry in the middle atmosphere using remote sensing of the atmosphere in the far-infrared (21-87 microns) and mid-infrared (9-16 microns) spectra. SAFIRE requires that far-IR detectors be cooled to 3-4 K and mid-IR detectors to 80 K for the expected mission lifetime of five years. A superfluid helium dewar and Stirling-cycle cryocoolers provide the cryogenic temperatures required by the infrared detectors. The proposed instrument thermal design uses passive thermal control techniques to reject 465 watts of waste heat from the instrument.

Mid-infrared spectroscopy in skin cancer cell type identification

Science.gov (United States)

Kastl, Lena; Kemper, Björn; Lloyd, Gavin R.; Nallala, Jayakrupakar; Stone, Nick; Naranjo, Valery; Penaranda, Francisco; Schnekenburger, Jürgen

2017-07-01

Mid infrared spectroscopy samples were developed for the analysis of skin tumor cell types and three dimensional tissue phantoms towards the application of midIR spectroscopy for fast and reliable skin cancer diagnostics.

Direct femtosecond laser writing of buried infrared waveguides in chalcogenide glasses

Science.gov (United States)

Le Coq, D.; Bychkov, E.; Masselin, P.

2016-02-01

Direct laser writing technique is now widely used in particular in glass, to produce both passive and active photonic devices. This technique offers a real scientific opportunity to generate three-dimensional optical components and since chalcogenide glasses possess transparency properties from the visible up to mid-infrared range, they are of great interest. Moreover, they also have high optical non-linearity and high photo-sensitivity that make easy the inscription of refractive index modification. The understanding of the fundamental and physical processes induced by the laser pulses is the key to well-control the laser writing and consequently to realize integrated photonic devices. In this paper, we will focus on two different ways allowing infrared buried waveguide to be obtained. The first part will be devoted to a very original writing process based on a helical translation of the sample through the laser beam. In the second part, we will report on another original method based on both a filamentation phenomenon and a point by point technique. Finally, we will demonstrate that these two writing techniques are suitable for the design of single mode waveguide for wavelength ranging from the visible up to the infrared but also to fabricate optical components.

Development of an ultra-compact mid-infrared attenuated total reflectance spectrophotometer

Science.gov (United States)

Kim, Dong Soo; Lee, Tae-Ro; Yoon, Gilwon

2014-07-01

Mid-infrared spectroscopy has been an important tool widely used for qualitative analysis in various fields. However, portable or personal use is size and cost prohibitive for either Fourier transform infrared or attenuated total reflectance (ATR) spectrophotometers. In this study, we developed an ultra-compact ATR spectrophotometer whose frequency band was 5.5-11.0 μm. We used miniature components, such as a light source fabricated by semiconductor technology, a linear variable filter, and a pyro-electric array detector. There were no moving parts. Optimal design based on two light sources, a zippered configuration of the array detector and ATR optics could produce absorption spectra that might be used for qualitative analysis. A microprocessor synchronized the pulsed light sources and detector, and all the signals were processed digitally. The size was 13.5×8.5×3.5 cm3 and the weight was 300 grams. Due to its low cost, our spectrophotometer can replace many online monitoring devices. Another application could be for a u-healthcare system installed in the bathroom or attached to a smartphone for monitoring substances in body fluids.

Amplitude and frequency stabilized solid-state lasers in the near infrared

International Nuclear Information System (INIS)

Laporta, P.; Taccheo, S.; Marano, M.; Svelto, O.; Bava, E.; Galzerano, G.; Svelto, C.

2001-01-01

In this article we present a comprehensive review of the work done by our group on the amplitude and frequency stabilization of diode-pumped near-infrared solid-state lasers. In particular, we describe experiments based on single-mode Nd:YAG (1064 nm), Er-Yb:glass (1530-1560 nm), and Tm-Ho:YAG (2097 nm) lasers, end-pumped by semiconductor laser diodes. Amplitude stabilization is achieved by means of optoelectronic control loops sensing the laser intensity fluctuations and feeding back the error signal to the current of the pump diodes. Frequency stabilization is pursued using rovibrational molecular lines as absolute frequency references by means of various frequency locking techniques. The most interesting stability results are described in some detail whereas the wide literature cited through the paper provides for a useful reference list of related topics and experiments. (author)

Broadly tunable mid-infrared VECSEL for multiple components hydrocarbon gas sensing

Science.gov (United States)

Rey, J. M.; Fill, M.; Felder, F.; Sigrist, M. W.

2014-12-01

A new sensing platform to simultaneously identify and quantify volatile C1 to C4 alkanes in multi-component gas mixtures is presented. This setup is based on an optically pumped, broadly tunable mid-infrared vertical-external-cavity surface-emitting laser (VECSEL) developed for gas detection. The lead-chalcogenide VECSEL is the key component of the presented optical sensor. The potential of the proposed sensing setup is illustrated by experimental absorption spectra obtained from various mixtures of volatile hydrocarbons and water vapor. The sensor has a sub-ppm limit of detection for each targeted alkane in a hydrocarbon gas mixture even in the presence of a high water vapor content.

Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors

Science.gov (United States)

2016-05-16

AFRL-AFOSR-JP-TR-2016-0054 Silicon based mid infrared SiGeSn heterostrcture emitters and detectors Greg Sun UNIVERSITY OF MASSACHUSETTS Final Report... Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors ” February 10, 2016 Principal Investigator: Greg Sun Engineering...diodes are incompatible with the CMOS process and therefore cannot be easily integrated with Si electronics . The GeSn mid IR detectors developed in

Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser; Construccion de un amplificador optico de semiconductor a partir de un laser de semiconductor Fabry-Perot

Energy Technology Data Exchange (ETDEWEB)

Garcia, E.; Soto, H.; Marquez, H.; Valles V, N. [Departamento de Electronica y Telecomunicaciones, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada. Km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, Baja California (Mexico)

2000-07-01

A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

Infrared rectification in a nanoantenna-coupled metal-oxide-semiconductor tunnel diode.

Science.gov (United States)

Davids, Paul S; Jarecki, Robert L; Starbuck, Andrew; Burckel, D Bruce; Kadlec, Emil A; Ribaudo, Troy; Shaner, Eric A; Peters, David W

2015-12-01

Direct rectification of electromagnetic radiation is a well-established method for wireless power conversion in the microwave region of the spectrum, for which conversion efficiencies in excess of 84% have been demonstrated. Scaling to the infrared or optical part of the spectrum requires ultrafast rectification that can only be obtained by direct tunnelling. Many research groups have looked to plasmonics to overcome antenna-scaling limits and to increase the confinement. Recently, surface plasmons on heavily doped Si surfaces were investigated as a way of extending surface-mode confinement to the thermal infrared region. Here we combine a nanostructured metallic surface with a heavily doped Si infrared-reflective ground plane designed to confine infrared radiation in an active electronic direct-conversion device. The interplay of strong infrared photon-phonon coupling and electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast electronic tunnelling in metal-oxide-semiconductor (MOS) structures. Infrared dispersion of SiO2 near a longitudinal optical (LO) phonon mode gives large transverse-field confinement in a nanometre-scale oxide-tunnel gap as the wavelength-dependent permittivity changes from 1 to 0, which leads to enhanced electromagnetic fields at material interfaces and a rectified displacement current that provides a direct conversion of infrared radiation into electric current. The spectral and electrical signatures of the nanoantenna-coupled tunnel diodes are examined under broadband blackbody and quantum-cascade laser (QCL) illumination. In the region near the LO phonon resonance, we obtained a measured photoresponsivity of 2.7 mA W(-1) cm(-2) at -0.1 V.

The features of modelling semiconductor lasers with a wide contact

Directory of Open Access Journals (Sweden)

Rzhanov Alexey

2017-01-01

Full Text Available The aspects of calculating the dynamics and statics of powerful semiconductor laser diodes radiation are investigated. It takes into account the main physical mechanisms influencing power, spectral composition, far and near field of laser radiation. It outlines a dynamic distributed model of a semiconductor laser with a wide contact and possible algorithms for its implementation.

Singly-resonant sum frequency generation of visible light in a semiconductor disk laser

DEFF Research Database (Denmark)

Andersen, Martin Thalbitzer; Schlosser, P.J.; Hastie, J.E.

2009-01-01

In this paper a generic approach for visible light generation is presented. It is based on sum frequency generation between a semiconductor disk laser and a solid-state laser, where the frequency mixing is achieved within the cavity of the semiconductor disk laser using a singlepass of the solid......-state laser light. This exploits the good beam quality and high intra-cavity power present in the semiconductor disk laser to achieve high conversion efficiency. Combining sum frequency mixing and semiconductor disk lasers in this manner allows in principle for generation of any wavelength within the visible...

Bracket debonding by mid-infrared laser radiation

International Nuclear Information System (INIS)

Jelínková, H; Šulc, J; Koranda, P; Němec, M; Dostálová, T; Hofmanova, P

2009-01-01

The purpose of the study was to determine the proper laser radiation for ceramic bracket debonding and the investigation of the tooth root temperature injury. The debonding was investigated by diode-pumped continuously running Tm:YAP and Nd:YAG lasers, and by GaAs laser diode generating radiation with the wavelengths 1.997 μm, 1.444 μm, and 0.808 μm, respectively. The possibility of brackets removal by laser radiation was investigated together with the tooth and, it specifically, root temperature rise. From the results it follows that continuously running diode pumped Tm:YAG or Nd:YAG laser generating wavelengths 1.997 μm or 1.444 μm, respectively, having the output power 1 W can be good candidates for ceramic brackets debonding

Laser-induced down-conversion and infrared phosphorescence emissivity of novel ligand-free perovskite nanomaterials

Science.gov (United States)

Ahmed, M. A.; Khafagy, Rasha M.; El-sayed, O.

2014-03-01

For the first time, standalone and ligand-free series of novel rare-earth-based perovskite nanomaterials are used as near infrared (NIR) and mid infrared (MIR) emitters. Nano-sized La0.7Sr0.3M0.1Fe0.9O3; where M = 0, Mn2+, Co2+ or Ni2+ were synthesized using the flash auto-combustion method and characterized using FTIR, FT-Raman, SEM and EDX. Photoluminescence spectra were spontaneously recorded during pumping the samples with 0.5 mW of green laser emitting continuously at 532 nm. La0.7Sr0.3FeO3 (where M = 0) did not result in any infrared emissivity, while intense near and mid infrared down-converted phosphorescence was released from the M-doped samples. The released phosphorescence greatly shifted among the infrared spectral region with changing the doping cation. Ni2+-doped perovskite emitted at the short-wavelength near-infrared region, while Mn2+ and Co2+-doped perovskites emitted at the mid-wavelength infrared region. The detected laser-induced spontaneous parametric down-conversion phosphorescence (SPDC) occurred through a two-photon process by emitting two NIR or MIR photons among a cooperative energy transfer between the La3+ cations and the M2+ cations. Combining SrFeO3 ceramic with both a rare earth cation (RE3+) and a transition metal cation (Mn2+, Co2+ or Ni2+), rather than introducing merely RE3+ cations, greatly improved and controlled the infrared emissivity properties of synthesized perovskites through destroying their crystal symmetry and giving rise to asymmetrical lattice vibration and the nonlinear optical character. The existence of SPDC in the M2+-doped samples verifies their nonlinear character after the absence of this character in La0.7Sr0.3FeO3. Obtained results verify that, for the first time, perovskite nanomaterials are considered as nonlinear optical crystals with intense infrared emissivity at low pumping power of visible wavelengths, which nominates them for photonic applications and requires further studies regarding their lasing

Direct solar pumping of semiconductor lasers: A feasibility study

Science.gov (United States)

Anderson, Neal G.

1992-01-01

This report describes results of NASA Grant NAG-1-1148, entitled Direct Solar Pumping of Semiconductor Lasers: A Feasibility Study. The goals of this study were to provide a preliminary assessment of the feasibility of pumping semiconductor lasers in space with directly focused sunlight and to identify semiconductor laser structures expected to operate at the lowest possible focusing intensities. It should be emphasized that the structures under consideration would provide direct optical-to-optical conversion of sunlight into laser light in a single crystal, in contrast to a configuration consisting of a solar cell or storage battery electrically pumping a current injection laser. With external modulation, such lasers could perhaps be efficient sources for intersatellite communications. We proposed specifically to develop a theoretical model of semiconductor quantum-well lasers photopumped by a broadband source, test it against existing experimental data where possible, and apply it to estimating solar pumping requirements and identifying optimum structures for operation at low pump intensities. These tasks have been accomplished, as described in this report of our completed project. The report is organized as follows: Some general considerations relevant to the solar-pumped semiconductor laser problem are discussed in Section 2, and the types of structures chosen for specific investigation are described. The details of the laser model we developed for this work are then outlined in Section 3. In Section 4, results of our study are presented, including designs for optimum lattice-matched and strained-layer solar-pumped quantum-well lasers and threshold pumping estimates for these structures. It was hoped at the outset of this work that structures could be identified which could be expected to operate continuously at solar photoexcitation intensities of several thousand suns, and this indeed turned out to be the case as described in this section. Our project is

Reduced filamentation in high power semiconductor lasers

DEFF Research Database (Denmark)

Skovgaard, Peter M. W.; McInerney, John; O'Brien, Peter

1999-01-01

High brightness semiconductor lasers have applications in fields ranging from material processing to medicine. The main difficulty associated with high brightness is that high optical power densities cause damage to the laser facet and thus require large apertures. This, in turn, results in spatio......-temporal instabilities such as filamentation which degrades spatial coherence and brightness. We first evaluate performance of existing designs with a “top-hat” shaped transverse current density profile. The unstable nature of highly excited semiconductor material results in a run-away process where small modulations...

Semiconductor Laser Tracking Frequency Distance Gauge

Science.gov (United States)

Phillips, James D.; Reasenberg, Robert D.

2009-01-01

Advanced astronomical missions with greatly enhanced resolution and physics missions of unprecedented accuracy will require a spaceworthy laser distance gauge of substantially improved performance. The Tracking Frequency Gauge (TFG) uses a single beam, locking a laser to the measurement interferometer. We have demonstrated this technique with pm (10(exp -12) m) performance. We report on the version we are now developing based on space-qualifiable, fiber-coupled distributed-feedback semiconductor lasers.

Study on guided waves in semiconductor lasers

International Nuclear Information System (INIS)

Pudensi, M.A.A.

1980-01-01

In This work we studied the guided waves in semiconductor lasers. In the first part we carried on the experimental measurements on lasers with stripe nonorthogonal to the mirrors. In the second part we developed a matrix method for the study of propagation and reflection of guided waves in lasers. (author) [pt

Management of gingival hyperpigmentation by semiconductor diode laser

Directory of Open Access Journals (Sweden)

Geeti Gupta

2011-01-01

Full Text Available Gingival hyperpigmentation is caused by excessive deposition of melanin in the basal and suprabasal cell layers of the epithelium. Although melanin pigmentation of the gingiva is completely benign, cosmetic concerns are common, particularly in patients having a very high smile line (gummy smile. Various depigmentation techniques have been employed, such as scalpel surgery, gingivectomy, gingivectomy with free gingival autografting, cryosurgery, electrosurgery, chemical agents such as 90% phenol and 95% alcohol, abrasion with diamond burs, Nd:YAG laser, semiconductor diode laser, and CO 2 laser. The present case report describes simple and effective depigmentation technique using semiconductor diode laser surgery - for gingival depigmentation, which have produced good results with patient satisfaction.

Development of semiconductor laser based Doppler lidars for wind-sensing applications

DEFF Research Database (Denmark)

Rodrigo, Peter John; Hu, Qi; Pedersen, Christian

2015-01-01

We summarize the progress we have made in the development of semiconductor laser (SL) based Doppler lidar systems for remote wind speed and direction measurements. The SL emitter used in our wind-sensing lidar is an integrated diode laser with a tapered (semiconductor) amplifier. The laser source...

All-polymer organic semiconductor laser chips: Parallel fabrication and encapsulation

DEFF Research Database (Denmark)

Vannahme, Christoph; Klinkhammer, Sönke; Christiansen, Mads Brøkner

2010-01-01

Organic semiconductor lasers are of particular interest as tunable visible laser light sources. For bringing those to market encapsulation is needed to ensure practicable lifetimes. Additionally, fabrication technologies suitable for mass production must be used. We introduce all-polymer chips...... comprising encapsulated distributed feedback organic semiconductor lasers. Several chips are fabricated in parallel by thermal nanoimprint of the feedback grating on 4? wafer scale out of poly(methyl methacrylate) (PMMA) and cyclic olefin copolymer (COC). The lasers consisting of the organic semiconductor...... tris(8- hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2- methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM) are hermetically sealed by thermally bonding a polymer lid. The organic thin film is placed in a basin within the substrate and is not in direct contact to the lid...

Mid-infrared GaSb-based resonant tunneling diode photodetectors for gas sensing applications

Science.gov (United States)

Rothmayr, F.; Pfenning, A.; Kistner, C.; Koeth, J.; Knebl, G.; Schade, A.; Krueger, S.; Worschech, L.; Hartmann, F.; Höfling, S.

2018-04-01

We present resonant tunneling diode-photodetectors (RTD-PDs) with GaAs0.15Sb0.85/AlAs0.1Sb0.9 double barrier structures combined with an additional quaternary Ga0.64In0.36As0.33Sb0.67 absorption layer covering the fingerprint absorption lines of various gases in the mid-infrared wavelength spectral region. The absorption layer cut-off wavelength is determined to be 3.5 μm, and the RTD-PDs show peak-to-valley current ratios up to 4.3 with a peak current density of 12 A/cm-2. The incorporation of the quaternary absorption layer enables the RTD-PDs to be sensitive to illumination with light up to the absorption lines of HCl at 3395 nm. At this wavelength, the detector shows a responsivity of 6.3 mA/W. At the absorption lines of CO2 and CO at 2004 nm and 2330 nm, respectively, the RTD-PDs reach responsivities up to 0.97 A/W. Thus, RTD-PDs pave the way towards high sensitive mid-infrared detectors that can be utilized in tunable laser absorption spectroscopy.

High brightness semiconductor lasers with reduced filamentation

DEFF Research Database (Denmark)

McInerney, John; O'Brien, Peter.; Skovgaard, Peter M. W.

1999-01-01

High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture...

Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser

International Nuclear Information System (INIS)

Garcia, E.; Soto, H.; Marquez, H.; Valles V, N.

2000-01-01

A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

Ultrafast dynamics and laser action of organic semiconductors

CERN Document Server

Vardeny, Zeev Valy

2009-01-01

Spurred on by extensive research in recent years, organic semiconductors are now used in an array of areas, such as organic light emitting diodes (OLEDs), photovoltaics, and other optoelectronics. In all of these novel applications, the photoexcitations in organic semiconductors play a vital role. Exploring the early stages of photoexcitations that follow photon absorption, Ultrafast Dynamics and Laser Action of Organic Semiconductors presents the latest research investigations on photoexcitation ultrafast dynamics and laser action in pi-conjugated polymer films, solutions, and microcavities.In the first few chapters, the book examines the interplay of charge (polarons) and neutral (excitons) photoexcitations in pi-conjugated polymers, oligomers, and molecular crystals in the time domain of 100 fs-2 ns. Summarizing the state of the art in lasing, the final chapters introduce the phenomenon of laser action in organics and cover the latest optoelectronic applications that use lasing based on a variety of caviti...

Airborne Laser Infrared Absorption Spectrometer (ALIAS-II) for in situ Atmospheric Measurements of N(sub 2)0, CH(sub 4), CO, HCl, and NO(sub 2) from Balloon or RPA Platforms

Science.gov (United States)

Scott, D.; Herman, R.; Webster, C.; May, R.; Flesch, G.; Moyer, E.

1998-01-01

The Airborne Laser Infrared Absorption Spectrometer II (ALIAS-II) is a lightweight, high-resolution (0.0003 cm-1), scanning, mid-infrared absorption spectrometer based on cooled (80 K) lead-salt tunable diode laser sources.

Mid-IR laser ultrasonic testing for fiber reinforced plastics

Science.gov (United States)

Kusano, Masahiro; Hatano, Hideki; Oguchi, Kanae; Yamawaki, Hisashi; Watanabe, Makoto; Enoki, Manabu

2018-04-01

Ultrasonic testing is the most common method to detect defects in materials and evaluate their sizes and locations. Since piezo-electric transducers are manually handled from point to point, it takes more costs for huge products such as airplanes. Laser ultrasonic testing (LUT) is a breakthrough technique. A pulsed laser generates ultrasonic waves on a material surface due to thermoelastic effect or ablation. The ultrasonic waves can be detected by another laser with an interferometer. Thus, LUT can realize instantaneous inspection without contacting a sample. A pulse laser with around 3.2 μm wavelength (in the mid-IR range) is more suitable to generate ultrasonic waves for fiber reinforced plastics (FRPs) because the light is well absorbed by the polymeric matrix. On the other hand, such a laser is not available in the market. In order to emit the mid-IR laser pulse, we came up with the application of an optical parametric oscillator and developed an efficient wavelength conversion device by pumping a compact Nd:YAG solid-state laser. Our mid-IR LUT system is most suitable for inspection of FRPs. The signal-to-noise ratio of ultrasonic waves generated by the mid-IR laser is higher than that by the Nd:YAG laser. The purpose of the present study is to evaluate the performance of the mid-IR LUT system in reflection mode. We investigated the effects of the material properties and the laser properties on the generated ultrasonic waves. In addition, C-scan images by the system were also presented.

Primary experimental studies on mid-infrared FEL irradiation on dental substances at BFEL

CERN Document Server

Biao, Z J; Gao Xue Ju; He Wei; Huang Yu Ying; Li Yong Gui; LiuNianQing; Wang Min Kai; Wu Gan; Yan Xue Pin; Zhang Guo Qing

2001-01-01

A free electron laser (FEL) with its characteristics of wide wavelength tunability, ultrashort pulse time structure, and high peak power density is predominantly superior to all other conventional lasers in applications. Several experimental studies on mid-infrared FEL irradiation on dental enamel and dentine were performed at the Beijing FEL. Experimental aims were to investigate changes in the hardness, ratios of P to Ca and Cs before and after irradiation on samples with a characteristic absorption wavelength of 9.66 mu m, in the colors of these sample surfaces after irradiation with different wavelengths around the peak wavelength. The time dependence of temperature of the dentine sample was measured with its ps pulse effects compared to that with a continuous CO sub 2 laser. FTIR absorption spectra in the range of 2.5-15.4 mu m for samples of these hard dental substances and pure hydroxyapatite were first examined to decide their chemical components and absorption maximums. Primary experimental results w...

The dynamics of the laser-induced metal-semiconductor phase transition of samarium sulfide (SmS)

International Nuclear Information System (INIS)

Kaempfer, Tino

2009-01-01

The present thesis is dedicated to the experimental study of the metal-semiconductor phase transition of samarium sulfide (SmS): Temperature- and time-resolved experiments on the characterization of the phase transition of mixed-valence SmS samples (M-SmS) are presented. The measurement of the dynamics of the laser-induced phase transition pursues via time-resolved ultrashort-time microscopy and by X-ray diffraction with sub-picosecond time resolution. The electronic and structural processes, which follow an excitation of M-SmS with infrared femtosecond laser pulses, are physically interpreted on the base of the results obtained in this thesis and model imaginations. [de

Picosecond dissociation of amyloid fibrils with infrared laser: A nonequilibrium simulation study

Energy Technology Data Exchange (ETDEWEB)

Hoang Viet, Man; Roland, Christopher, E-mail: cmroland@ncsu.edu; Sagui, Celeste, E-mail: sagui@ncsu.edu [Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202 (United States); Derreumaux, Philippe; Nguyen, Phuong H., E-mail: phuong.nguyen@ibpc.fr [Laboratoire de Biochimie Théorique, UPR 9080, CNRS Université Denis Diderot, Sorbonne Paris Cité IBPC, 13 rue Pierre et Marie Curie, 75005 Paris (France); Li, Mai Suan [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Institute for Computational Science and Technology, SBI Building, Quang Trung Software City, Tan Chanh Hiep Ward, District 12, Ho Chi Minh City (Viet Nam)

2015-10-21

Recently, mid-infrared free-electron laser technology has been developed to dissociate amyloid fibrils. Here, we present a theoretical framework for this type of experiment based on laser-induced nonequilibrium all-atom molecular dynamics simulations. We show that the fibril is destroyed due to the strong resonance between its amide I vibrational modes and the laser field. The effects of laser irradiation are determined by a balance between fibril formation and dissociation. While the overall rearrangements of the fibril finish over short time scales, the interaction between the peptides and the solvent continues over much longer times indicating that the waters play an important role in the dissociation process. Our results thus provide new insights into amyloid fibril dissociation by laser techniques and open up new venues to investigate the complex phenomena associated with amyloidogenesis.

Toward continuous-wave operation of organic semiconductor lasers

Science.gov (United States)

Sandanayaka, Atula S. D.; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya

2017-01-01

The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi–continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture. PMID:28508042

Spitzer mid-infrared spectra of cool-core galaxy clusters

NARCIS (Netherlands)

de Messières, G.E.; O'Connell, R.W.; McNamara, B.R.; Donahue, M.; Nulsen, P.E.J.; Voit, G.M.; Wise, M.W.; Smith, B.; Higdon, J.; Higdon, S.; Bastian, N.

2010-01-01

We have obtained mid-infrared spectra of nine cool-core galaxy clusters with the Infrared Spectrograph aboard the Spitzer Space Telescope. X-ray, ultraviolet and optical observations have demonstrated that each of these clusters hosts a cooling flow which seems to be fueling vigorous star formation

Development and application of a far infrared laser

International Nuclear Information System (INIS)

Nakayama, Kazuya; Okajima, Shigeki; Kawahata, Kazuo

2011-01-01

There has been a 40 years history on the application of an infrared laser to interference, polarization and scattering light sources in fusion plasma diagnostics. It is one of important light sources in ITER plasma diagnostics too. In the present review, authors recall the history of the infrared laser development especially of cw infrared lasers. In addition, the state-of-the-art technology for infrared lasers, infrared components and its applications to plasma diagnostics are discussed. (J.P.N.)

SIBI: A compact hyperspectral camera in the mid-infrared

Science.gov (United States)

Pola Fossi, Armande; Ferrec, Yann; Domel, Roland; Coudrain, Christophe; Guerineau, Nicolas; Roux, Nicolas; D'Almeida, Oscar; Bousquet, Marc; Kling, Emmanuel; Sauer, Hervé

2015-10-01

Recent developments in unmanned aerial vehicles have increased the demand for more and more compact optical systems. In order to bring solutions to this demand, several infrared systems are being developed at ONERA such as spectrometers, imaging devices, multispectral and hyperspectral imaging systems. In the field of compact infrared hyperspectral imaging devices, ONERA and Sagem Défense et Sécurité have collaborated to develop a prototype called SIBI, which stands for "Spectro-Imageur Birefringent Infrarouge". It is a static Fourier transform imaging spectrometer which operates in the mid-wavelength infrared spectral range and uses a birefringent lateral shearing interferometer. Up to now, birefringent interferometers have not been often used for hyperspectral imaging in the mid-infrared because of the lack of crystal manufacturers, contrary to the visible spectral domain where the production of uniaxial crystals like calcite are mastered for various optical applications. In the following, we will present the design and the realization of SIBI as well as the first experimental results.

Investigations of the polarization behavior of quantum cascade lasers by Stokes parameters.

Science.gov (United States)

Janassek, Patrick; Hartmann, Sébastien; Molitor, Andreas; Michel, Florian; Elsäßer, Wolfgang

2016-01-15

We experimentally investigate the full polarization behavior of mid-infrared emitting quantum cascade lasers (QCLs) in terms of measuring the complete Stokes parameters, instead of only projecting them on a linear polarization basis. We demonstrate that besides the pre-dominant linear TM polarization of the emitted light as governed by the selection rules of the intersubband transition, small non-TM contributions, e.g., circularly polarized light, are present reflecting the birefringent behavior of the semiconductor quantum well waveguide. Surprisingly unique is the persistence of these polarization properties well below laser threshold. These investigations give further insight into understanding, manipulating, and exploiting the polarization properties of QCLs, both from a laser point of view and with respect toward applications.

Controlling the emission wavelength in group III-V semiconductor laser diodes

KAUST Repository

Ooi, Boon S.; Majid, Mohammed Abdul; Afandy, Rami; Aljabr, Ahmad

2016-01-01

Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III

Return-map for semiconductor lasers with optical feedback

DEFF Research Database (Denmark)

Mørk, Jesper; Tromborg, Bjarne; Sabbatier, H.

1999-01-01

It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation of the phe......It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation...

THE SPITZER MID-INFRARED ACTIVE GALACTIC NUCLEUS SURVEY. I. OPTICAL AND NEAR-INFRARED SPECTROSCOPY OF OBSCURED CANDIDATES AND NORMAL ACTIVE GALACTIC NUCLEI SELECTED IN THE MID-INFRARED

Energy Technology Data Exchange (ETDEWEB)

Lacy, M. [National Radio Astronomy Observatory, 520 Edgemont Road, Charlottesville, VA 22903 (United States); Ridgway, S. E. [National Optical Astronomy Observatory, 950 North Cherry Avenue, Tucson, AZ 85719 (United States); Gates, E. L. [UCO/Lick Observatory, P.O. Box 85, Mount Hamilton, CA 95140 (United States); Nielsen, D. M. [Department of Astronomy, University of Wisconsin, 475 N. Charter Street, Madison, WI 53706 (United States); Petric, A. O. [Department of Astronomy, California Institute of Technology, Pasadena, CA 91125 (United States); Sajina, A. [Department of Physics and Astronomy, Tuffs University, 212 College Avenue, Medford, MA 02155 (United States); Urrutia, T. [Leibniz-Institut für Astrophysik Potsdam, An der Sternwarte 16, D-14482 Potsdam (Germany); Cox Drews, S. [946 Mangrove Avenue 102, Sunnyvale, CA 94086 (United States); Harrison, C. [Department of Astronomy, University of Michigan, Ann Arbor, MI 48109 (United States); Seymour, N. [CSIRO, P.O. Box 76, Epping, NSW 1710 (Australia); Storrie-Lombardi, L. J. [Spitzer Science Center, California Institute of Technology, Pasadena, CA 91125 (United States)

2013-10-01

We present the results of a program of optical and near-infrared spectroscopic follow-up of candidate active galactic nuclei (AGNs) selected in the mid-infrared. This survey selects both normal and obscured AGNs closely matched in luminosity across a wide range, from Seyfert galaxies with bolometric luminosities L {sub bol} ∼ 10{sup 10} L {sub ☉} to highly luminous quasars (L {sub bol} ∼ 10{sup 14} L {sub ☉}), all with redshifts ranging from 0 to 4.3. Samples of candidate AGNs were selected with mid-infrared color cuts at several different 24 μm flux density limits to ensure a range of luminosities at a given redshift. The survey consists of 786 candidate AGNs and quasars, of which 672 have spectroscopic redshifts and classifications. Of these, 137 (20%) are type 1 AGNs with blue continua, 294 (44%) are type 2 objects with extinctions A{sub V} ∼> 5 toward their AGNs, 96 (14%) are AGNs with lower extinctions (A{sub V} ∼ 1), and 145 (22%) have redshifts, but no clear signs of AGN activity in their spectra. Of the survey objects 50% have L {sub bol} > 10{sup 12} L {sub ☉}, in the quasar regime. We present composite spectra for type 2 quasars and objects with no signs of AGN activity in their spectra. We also discuss the mid-infrared—emission-line luminosity correlation and present the results of cross correlations with serendipitous X-ray and radio sources. The results show that: (1) obscured objects dominate the overall AGN population, (2) mid-infrared selected AGN candidates exist which lack AGN signatures in their optical spectra but have AGN-like X-ray or radio counterparts, and (3) X-ray and optical classifications of obscured and unobscured AGNs often differ.

Dispersion compensated mid-infrared quantum cascade laser frequency comb with high power output

Directory of Open Access Journals (Sweden)

Q. Y. Lu

2017-04-01

Full Text Available Chromatic dispersion control plays an underlying role in optoelectronics and spectroscopy owing to its enhancement to nonlinear interactions by reducing the phase mismatching. This is particularly important to optical frequency combs based on quantum cascade lasers which require negligible dispersions for efficient mode locking of the dispersed modes into equally spaced comb modes. Here, we demonstrated a dispersion compensated mid-IR quantum cascade laser frequency comb with high power output at room temperature. A low-loss dispersive mirror has been engineered to compensate the device’s dispersion residue for frequency comb generation. Narrow intermode beating linewidths of 40 Hz in the comb-working currents were identified with a high power output of 460 mW and a broad spectral coverage of 80 cm-1. This dispersion compensation technique will enable fast spectroscopy and high-resolution metrology based on QCL combs with controlled dispersion and suppressed noise.

Quantum confined laser devices optical gain and recombination in semiconductors

CERN Document Server

Blood, Peter

2015-01-01

The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent...

Optical double-locked semiconductor lasers

Science.gov (United States)

AlMulla, Mohammad

2018-06-01

Self-sustained period-one (P1) nonlinear dynamics of a semiconductor laser are investigated when both optical injection and modulation are applied for stable microwave frequency generation. Locking the P1 oscillation through modulation on the bias current, injection strength, or detuning frequency stabilizes the P1 oscillation. Through the phase noise variance, the different modulation types are compared. It is demonstrated that locking the P1 oscillation through optical modulation on the output of the master laser outperforms bias-current modulation of the slave laser. Master laser modulation shows wider P1-oscillation locking range and lower phase noise variance. The locking characteristics of the P1 oscillation also depend on the operating conditions of the optical injection system

Single filament semiconductor laser

International Nuclear Information System (INIS)

Botez, D.

1980-01-01

A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

Semiconductor processing with excimer lasers

International Nuclear Information System (INIS)

Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.

1983-01-01

The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications

Semiconductor laser technology for remote sensing experiments

Science.gov (United States)

Katz, Joseph

1988-01-01

Semiconductor injection lasers are required for implementing virtually all spaceborne remote sensing systems. Their main advantages are high reliability and efficiency, and their main roles are envisioned in pumping and injection locking of solid state lasers. In some shorter range applications they may even be utilized directly as the sources.

Integrated semiconductor twin-microdisk laser under mutually optical injection

Energy Technology Data Exchange (ETDEWEB)

Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng; Yang, Yue-De; Xiao, Jin-Long; Huang, Yong-Zhen, E-mail: yzhuang@semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2015-05-11

We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due to strong optical interaction between the two microdisks.

Driver circuit for pulse modulation of a semiconductor laser

International Nuclear Information System (INIS)

Ueki, A.

1975-01-01

A pulse modulation driver circuit for a semiconductor laser is disclosed which discriminates among input pulse signals composed of binary codes to detect the occurrence of a pulse having a code of ''I'' following a pulse having a code of ''0''. Detection of this pattern is used to control the driver to increase either or both the width or peak value of the pulse having a code of 1. The effect of this is to eliminate a pattern effect in the light emitted by the semiconductor laser caused by an attenuation of the population inversion in the laser. (U.S.)

Mid-infrared volume diffraction gratings in IG2 chalcogenide glass: fabrication, characterization, and theoretical verification

Science.gov (United States)

Butcher, Helen L.; MacLachlan, David G.; Lee, David; Brownsword, Richard A.; Thomson, Robert R.; Weidmann, Damien

2018-02-01

Ultrafast laser inscription (ULI) has previously been employed to fabricate volume diffraction gratings in chalcogenide glasses, which operate in transmission mode in the mid-infrared spectral region. Prior gratings were manufactured for applications in astrophotonics, at wavelengths around 2.5 μm. Rugged volume gratings also have potential use in remote atmospheric sensing and molecular spectroscopy; for these applications, longer wavelength operation is required to coincide with atmospheric transparency windows (3-5 μm) and intense ro-vibrational molecular absorption bands. We report on ULI gratings inscribed in IG2 chalcogenide glass, enabling access to the full 3-5 μm window. High-resolution broadband spectral characterization of fabricated gratings was performed using a Fourier transform spectrometer. The zeroth order transmission was characterized to derive the diffraction efficiency into higher orders, up to the fourth orders in the case of gratings optimized for first order diffraction at 3 μm. The outcomes imply that ULI in IG2 is well suited for the fabrication of volume gratings in the mid infrared, providing the impact of the ULI fabrication parameters on the grating properties are well understood. To develop this understanding, grating modeling was conducted. Parameters studied include grating thickness, refractive index modification, and aspect ratio of the modulation achieved by ULI. Knowledge of the contribution and sensitivity of these parameters was used to inform the design of a 4.3 μm grating expected to achieve > 95% first order efficiency. We will also present the characterization of these latest mid-infrared diffraction gratings in IG2.

Design of high-efficiency diffractive optical elements towards ultrafast mid-infrared time-stretched imaging and spectroscopy

Science.gov (United States)

Xie, Hongbo; Ren, Delun; Wang, Chao; Mao, Chensheng; Yang, Lei

2018-02-01

Ultrafast time stretch imaging offers unprecedented imaging speed and enables new discoveries in scientific research and engineering. One challenge in exploiting time stretch imaging in mid-infrared is the lack of high-quality diffractive optical elements (DOEs), which encode the image information into mid-infrared optical spectrum. This work reports the design and optimization of mid-infrared DOE with high diffraction-efficiency, broad bandwidth and large field of view. Using various typical materials with their refractive indices ranging from 1.32 to 4.06 in ? mid-infrared band, diffraction efficiencies of single-layer and double-layer DOEs have been studied in different wavelength bands with different field of views. More importantly, by replacing the air gap of double-layer DOE with carefully selected optical materials, one optimized ? triple-layer DOE, with efficiency higher than 95% in the whole ? mid-infrared window and field of view greater than ?, is designed and analyzed. This new DOE device holds great potential in ultrafast mid-infrared time stretch imaging and spectroscopy.

Modes in light wave propagating in semiconductor laser

Science.gov (United States)

Manko, Margarita A.

1994-01-01

The study of semiconductor laser based on an analogy of the Schrodinger equation and an equation describing light wave propagation in nonhomogeneous medium is developed. The active region of semiconductor laser is considered as optical waveguide confining the electromagnetic field in the cross-section (x,y) and allowing waveguide propagation along the laser resonator (z). The mode structure is investigated taking into account the transversal and what is the important part of the suggested consideration longitudinal nonhomogeneity of the optical waveguide. It is shown that the Gaussian modes in the case correspond to spatial squeezing and correlation. Spatially squeezed two-mode structure of nonhomogeneous optical waveguide is given explicitly. Distribution of light among the laser discrete modes is presented. Properties of the spatially squeezed two-mode field are described. The analog of Franck-Condon principle for finding the maxima of the distribution function and the analog of Ramsauer effect for control of spatial distribution of laser emission are discussed.

Heteroclinic dynamics of coupled semiconductor lasers with optoelectronic feedback.

Science.gov (United States)

Shahin, S; Vallini, F; Monifi, F; Rabinovich, M; Fainman, Y

2016-11-15

Generalized Lotka-Volterra (GLV) equations are important equations used in various areas of science to describe competitive dynamics among a population of N interacting nodes in a network topology. In this Letter, we introduce a photonic network consisting of three optoelectronically cross-coupled semiconductor lasers to realize a GLV model. In such a network, the interaction of intensity and carrier inversion rates, as well as phases of laser oscillator nodes, result in various dynamics. We study the influence of asymmetric coupling strength and frequency detuning between semiconductor lasers and show that inhibitory asymmetric coupling is required to achieve consecutive amplitude oscillations of the laser nodes. These studies were motivated primarily by the dynamical models used to model brain cognitive activities and their correspondence with dynamics obtained among coupled laser oscillators.

Phenomenological scattering-rate model for the simulation of the current density and emission power in mid-infrared quantum cascade lasers

Energy Technology Data Exchange (ETDEWEB)

Kurlov, S. S. [Department of Physics, Humboldt-Universität zu Berlin, Newtonstraße 15, 12489 Berlin (Germany); Institute of Semiconductor Physics, National Academy of Sciences, pr. Nauki 45, Kiev-03028 (Ukraine); Flores, Y. V.; Elagin, M.; Semtsiv, M. P.; Masselink, W. T. [Department of Physics, Humboldt-Universität zu Berlin, Newtonstraße 15, 12489 Berlin (Germany); Schrottke, L.; Grahn, H. T. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin (Germany); Tarasov, G. G. [Institute of Semiconductor Physics, National Academy of Sciences, pr. Nauki 45, Kiev-03028 (Ukraine)

2016-04-07

A phenomenological scattering-rate model introduced for terahertz quantum cascade lasers (QCLs) [Schrottke et al., Semicond. Sci. Technol. 25, 045025 (2010)] is extended to mid-infrared (MIR) QCLs by including the energy dependence of the intersubband scattering rates for energies higher than the longitudinal optical phonon energy. This energy dependence is obtained from a phenomenological fit of the intersubband scattering rates based on published lifetimes of a number of MIR QCLs. In our approach, the total intersubband scattering rate is written as the product of the exchange integral for the squared moduli of the envelope functions and a phenomenological factor that depends only on the transition energy. Using the model to calculate scattering rates and imposing periodical boundary conditions on the current density, we find a good agreement with low-temperature data for current-voltage, power-current, and energy-photon flux characteristics for a QCL emitting at 5.2 μm.

Mid-infrared beam splitter for ultrashort pulses.

Science.gov (United States)

Somma, Carmine; Reimann, Klaus; Woerner, Michael; Kiel, Thomas; Busch, Kurt; Braun, Andreas; Matalla, Mathias; Ickert, Karina; Krüger, Olaf

2017-08-01

A design is presented for a beam splitter suitable for ultrashort pulses in the mid-infrared and terahertz spectral range consisting of a structured metal layer on a diamond substrate. Both the theory and experiment show that this beam splitter does not distort the temporal pulse shape.

Demonstration of a mid-infrared NO molecular Faraday optical filter.

Science.gov (United States)

Wu, Kuijun; Feng, Yutao; Li, Juan; Yu, Guangbao; Liu, Linmei; Xiong, Yuanhui; Li, Faquan

2017-12-11

A molecular Faraday optical filter (MFOF) working in the mid-infrared region is realized for the first time. NO molecule was used as the working material of the MFOF for potential applications in atmospheric remote sensing and combustion diagnosis. We develop a complete theory to describe the performance of MFOF by taking both Zeeman absorption and Faraday rotation into account. We also record the Faraday rotation transmission (FRT) signal using a quantum cascade laser over the range of 1,820 cm -1 to 1,922 cm -1 and calibrate it by using a 101.6 mm long solid germanium etalon with a free spectral range of 0.012 cm -1 . Good agreement between the simulation results and experimental data is achieved. The NO-MFOF's transmission characteristics as a function of magnetic field and pressure are studied in detail. Both Comb-like FRT spectrum and single branch transmission spectrum are obtained by changing the magnetic field. The diversity of FRT spectrum expands the range of potential applications in infrared optical remote sensing. This filtering method can also be extended to the lines of other paramagnetic molecules.

Mid-Infrared Fiber Lasers (Les fibres laser infrarouge moyen)

Science.gov (United States)

2010-09-01

Marcel Poulain, Université de Rennes / Le Verre Fluoré, France Fluoride Fiber Sources: Problems and Prospects Prof. Marcel Poulain from Rennes...currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. 1. REPORT DATE (DD-MM-YYYY) 2. REPORT TYPE 3. DATES...Les fibres laser infrarouge moyen (RTO-MP-SET-171) Synthèse Les sources laser en infrarouge moyen sont nécessaires aux systèmes actifs de

A study on the optical parts for a semiconductor laser module

Energy Technology Data Exchange (ETDEWEB)

Oh, Jun-Girl; Lee, Dong-Kil; Kim, Yang-Gyu; Lee, Kwang-Hoon; Park, Young-Sik [Korea Photonics Technology Institute, Gwangju (Korea, Republic of); Jang, Kwang-Ho [Hanvit Optoline, Gwangju (Korea, Republic of); Kang, Seung-Goo [COSET, Gwangju (Korea, Republic of)

2014-11-15

A semiconductor laser module consists of a LD (laser diode) chip that generates a laser beam, two cylindrical lenses to collimate the laser beam, a high-reflection mirror to produce a large output by collecting the laser beam, a collimator lens to guide the laser beam to an optical fiber and a protection filter to block reflected laser light that might damage the LD chip. The cylindrical lenses used in a semiconductor laser module are defined as FACs (fast axis collimators) and SACs (slow axis collimators) and are attached to the system module to control the shape of the laser beam. The FAC lens and the SAC lens are made of a glass material to protect the lenses from thermal deformation. In addition, they have aspheric shapes to improve optical performances. This paper presents a mold core grinding process for an asymmetrical aspheric lens and a GMP (glass molding press), what can be used to make aspheric cylindrical lenses for use as FACs or SACs, and a protection filter made by using IAD (ion-beam-assisted deposition). Finally, we developed the aspheric cylindrical lenses and the protection filter for a 10-W semiconductor laser module.

Electrically pumped edge-emitting photonic bandgap semiconductor laser

Science.gov (United States)

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

MID-INFRARED PROPERTIES OF DISK AVERAGED OBSERVATIONS OF EARTH WITH AIRS

International Nuclear Information System (INIS)

Hearty, Thomas; Song, Inseok; Kim, Sam; Tinetti, Giovanna

2009-01-01

We have investigated mid-infrared spectra of Earth obtained by the Atmospheric Infrared Sounder (AIRS) instrument on-board the AQUA spacecraft to explore the characteristics that may someday be observed in extrasolar terrestrial planets. We have used the AIRS infrared (R ∼ 1200; 3.75-15.4 μm) spectra to construct directly observed high-resolution spectra of the only known life bearing planet, Earth. The AIRS spectra are the first such spectra that span the seasons. We investigate the rotational and seasonal spectral variations that would arise due to varying cloud amount and viewing geometry and we explore what signatures may be observable in the mid-infrared by the next generation of telescopes capable of observing extrasolar terrestrial planets.

Generating Far-Infrared Radiation By Two-Wave Mixing

Science.gov (United States)

Borenstain, Shmuel

1992-01-01

Far-infrared radiation 1 to 6 GHz generated by two-wave mixing in asymmetrically grown GaAs/AlxGa1-xAs multiple-quantum-well devices. Two near-infrared semiconductor diode lasers phase-locked. Outputs amplified, then combined in semiconductor nonlinear multiple-quantum-well planar waveguide. Necessary to optimize design of device with respect to three factors: high degree of confinement of electromagnetic field in nonlinear medium to maximize power density, phase matching to extend length of zone of interaction between laser beams in non-linear medium, and nonlinear susceptibility. Devices used as tunable local oscillators in heterodyne-detection radiometers.

Infrared laser system

International Nuclear Information System (INIS)

Cantrell, C.D.; Carbone, R.J.

1977-01-01

An infrared laser system and method for isotope separation may comprise a molecular gas laser oscillator to produce a laser beam at a first wavelength, Raman spin flip means for shifting the laser to a second wavelength, a molecular gas laser amplifier to amplify said second wavelength laser beam to high power, and optical means for directing the second wavelength, high power laser beam against a desired isotope for selective excitation thereof in a mixture with other isotopes. The optical means may include a medium which shifts the second wavelength high power laser beam to a third wavelength, high power laser beam at a wavelength coincidental with a corresponding vibrational state of said isotope and which is different from vibrational states of other isotopes in the gas mixture

TESTING THE HYPOTHESIS THAT METHANOL MASER RINGS TRACE CIRCUMSTELLAR DISKS: HIGH-RESOLUTION NEAR-INFRARED AND MID-INFRARED IMAGING

International Nuclear Information System (INIS)

De Buizer, James M.; Bartkiewicz, Anna; Szymczak, Marian

2012-01-01

Milliarcsecond very long baseline interferometry maps of regions containing 6.7 GHz methanol maser emission have lead to the recent discovery of ring-like distributions of maser spots and the plausible hypothesis that they may be tracing circumstellar disks around forming high-mass stars. We aimed to test this hypothesis by imaging these regions in the near- and mid-infrared at high spatial resolution and compare the observed emission to the expected infrared morphologies as inferred from the geometries of the maser rings. In the near-infrared we used the Gemini North adaptive optics system of ALTAIR/NIRI, while in the mid-infrared we used the combination of the Gemini South instrument T-ReCS and super-resolution techniques. Resultant images had a resolution of ∼150 mas in both the near-infrared and mid-infrared. We discuss the expected distribution of circumstellar material around young and massive accreting (proto)stars and what infrared emission geometries would be expected for the different maser ring orientations under the assumption that the masers are coming from within circumstellar disks. Based upon the observed infrared emission geometries for the four targets in our sample and the results of spectral energy distribution modeling of the massive young stellar objects associated with the maser rings, we do not find compelling evidence in support of the hypothesis that methanol masers rings reside in circumstellar disks.

THE BOLOCAM GALACTIC PLANE SURVEY. VIII. A MID-INFRARED KINEMATIC DISTANCE DISCRIMINATION METHOD

Energy Technology Data Exchange (ETDEWEB)

Ellsworth-Bowers, Timothy P.; Glenn, Jason; Battersby, Cara; Ginsburg, Adam; Bally, John [CASA, University of Colorado, UCB 389, University of Colorado, Boulder, CO 80309 (United States); Rosolowsky, Erik [Department of Physics and Astronomy, University of British Columbia Okanagan, 3333 University Way, Kelowna, BC V1V 1V7 (Canada); Mairs, Steven [Department of Physics and Astronomy, University of Victoria, 3800 Finnerty Road, Victoria, BC V8P 1A1 (Canada); Evans, Neal J. II [Department of Astronomy, University of Texas, 1 University Station C1400, Austin, TX 78712 (United States); Shirley, Yancy L., E-mail: timothy.ellsworthbowers@colorado.edu [Steward Observatory, University of Arizona, 933 North Cherry Avenue, Tucson, AZ 85721 (United States)

2013-06-10

We present a new distance estimation method for dust-continuum-identified molecular cloud clumps. Recent (sub-)millimeter Galactic plane surveys have cataloged tens of thousands of these objects, plausible precursors to stellar clusters, but detailed study of their physical properties requires robust distance determinations. We derive Bayesian distance probability density functions (DPDFs) for 770 objects from the Bolocam Galactic Plane Survey in the Galactic longitude range 7. Degree-Sign 5 {<=} l {<=} 65 Degree-Sign . The DPDF formalism is based on kinematic distances, and uses any number of external data sets to place prior distance probabilities to resolve the kinematic distance ambiguity (KDA) for objects in the inner Galaxy. We present here priors related to the mid-infrared absorption of dust in dense molecular regions and the distribution of molecular gas in the Galactic disk. By assuming a numerical model of Galactic mid-infrared emission and simple radiative transfer, we match the morphology of (sub-)millimeter thermal dust emission with mid-infrared absorption to compute a prior DPDF for distance discrimination. Selecting objects first from (sub-)millimeter source catalogs avoids a bias towards the darkest infrared dark clouds (IRDCs) and extends the range of heliocentric distance probed by mid-infrared extinction and includes lower-contrast sources. We derive well-constrained KDA resolutions for 618 molecular cloud clumps, with approximately 15% placed at or beyond the tangent distance. Objects with mid-infrared contrast sufficient to be cataloged as IRDCs are generally placed at the near kinematic distance. Distance comparisons with Galactic Ring Survey KDA resolutions yield a 92% agreement. A face-on view of the Milky Way using resolved distances reveals sections of the Sagittarius and Scutum-Centaurus Arms. This KDA-resolution method for large catalogs of sources through the combination of (sub-)millimeter and mid-infrared observations of molecular

Development of tellurium oxide and lead-bismuth oxide glasses for mid-wave infra-red transmission optics

Science.gov (United States)

Zhou, Beiming; Rapp, Charles F.; Driver, John K.; Myers, Michael J.; Myers, John D.; Goldstein, Jonathan; Utano, Rich; Gupta, Shantanu

2013-03-01

Heavy metal oxide glasses exhibiting high transmission in the Mid-Wave Infra-Red (MWIR) spectrum are often difficult to manufacture in large sizes with optimized physical and optical properties. In this work, we researched and developed improved tellurium-zinc-barium and lead-bismuth-gallium heavy metal oxide glasses for use in the manufacture of fiber optics, optical components and laser gain materials. Two glass families were investigated, one based upon tellurium and another based on lead-bismuth. Glass compositions were optimized for stability and high transmission in the MWIR. Targeted glass specifications included low hydroxyl concentration, extended MWIR transmission window, and high resistance against devitrification upon heating. Work included the processing of high purity raw materials, melting under controlled dry Redox balanced atmosphere, finning, casting and annealing. Batch melts as large as 4 kilograms were sprue cast into aluminum and stainless steel molds or temperature controlled bronze tube with mechanical bait. Small (100g) test melts were typically processed in-situ in a 5%Au°/95%Pt° crucible. Our group manufactured and evaluated over 100 different experimental heavy metal glass compositions during a two year period. A wide range of glass melting, fining, casting techniques and experimental protocols were employed. MWIR glass applications include remote sensing, directional infrared counter measures, detection of explosives and chemical warfare agents, laser detection tracking and ranging, range gated imaging and spectroscopy. Enhanced long range mid-infrared sensor performance is optimized when operating in the atmospheric windows from ~ 2.0 to 2.4μm, ~ 3.5 to 4.3μm and ~ 4.5 to 5.0μm.

Mid-infrared supercontinuum generation in a suspended core chalcogenide fiber

DEFF Research Database (Denmark)

Møller, Uffe Visbech; Yu, Yi; Gai, Xin

The mid-infrared spectral region is of great interest because virtually all organic compounds display distinctive spectral fingerprints herein that reveal chemical information about them [1], and the mid-infrared region is therefore of key importance to many applications, including food quality...... control [2], gas sensing [3] and medical diagnostics [4] . We have used a low-loss suspended core As 38 Se 62 fiber with core diameter of 4.5 μ m and a zero - dispersion wavelength of 3.5 μ m to generate mid-infrared supercontinuum by pumping with an optical parametric amplifier delivering 320 fs pulses...... with a peak power of ~5.5 kW at a repetition rate of 21 MHz at different wavelengths from 3.3 to 4.7 μ m . By pumping at 4.4 μ m with a peak power of 5.2 kW coupled to the fiber a supercontinuum spanning from 1.7 to 7.5 μ m with an average output power of 15.6 mW was obtained. Figure 1 shows the results...

Laser wakefield acceleration with high-power, few-cycle mid-IR lasers

OpenAIRE

Papp, Daniel; Wood, Jonathan C.; Gruson, Vincent; Bionta, Mina; Gruse, Jan-Niclas; Cormier, Eric; Najmudin, Zulfikar; Légaré, François; Kamperidis, Christos

2018-01-01

The study of laser wakefield electron acceleration (LWFA) using mid-IR laser drivers is a promising path for future laser driven electronaccelerators, when compared to traditional near-IR laser drivers uperating at 0.8-1 {\\mu}m central wavelength ({\\lambda}laser), as the necessary vector potential a_0 for electron injection can be achieved with smaller laser powers due to the linear dependence on {\\lambda}laser. In this work, we perform 2D PIC simulations on LWFA using few-cycle high power (5...

Mid-IR laser system for advanced neurosurgery

Science.gov (United States)

Klosner, M.; Wu, C.; Heller, D. F.

2014-03-01

We present work on a laser system operating in the near- and mid-IR spectral regions, having output characteristics designed to be optimal for cutting various tissue types. We provide a brief overview of laser-tissue interactions and the importance of controlling certain properties of the light beam. We describe the principle of operation of the laser system, which is generally based on a wavelength-tunable alexandrite laser oscillator/amplifier, and multiple Raman conversion stages. This configuration provides robust access to the mid-IR spectral region at wavelengths, pulse energies, pulse durations, and repetition rates that are attractive for neurosurgical applications. We summarize results for ultra-precise selective cutting of nerve sheaths and retinas with little collateral damage; this has applications in procedures such as optic-nerve-sheath fenestration and possible spinal repair. We also report results for cutting cornea, and dermal tissues.

Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

International Nuclear Information System (INIS)

Deri, R.J.

2011-01-01

Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a ∼ 200 (micro)s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

Modeling bidirectionally coupled single-mode semiconductor lasers

International Nuclear Information System (INIS)

Mulet, Josep; Masoller, Cristina; Mirasso, Claudio R.

2002-01-01

We develop a dynamical model suitable for the description of two mutually coupled semiconductor lasers in a face-to-face configuration. Our study considers the propagation of the electric field along the compound system as well as the evolution of the carrier densities within each semiconductor laser. Mutual injection, passive optical feedback, and multiple reflections are accounted for in this framework, although under weak to moderate coupling conditions. We systematically describe the effect of the coupling strength on the spectrum of monochromatic solutions and on the respective dynamical behavior. By assuming single-longitudinal-mode operation, weak mutual coupling and slowly varying approximation, the dynamical model can be reduced to rate equations describing the mutual injection from one laser to its counterpart and vice versa. A good agreement between the complete and simplified models is found for small coupling. For larger coupling, higher-order terms lead to a smaller threshold reduction, reflected itself in the spectrum of the monochromatic solutions and in the dynamics of the optical power

New infrared solid state laser materials for CALIOPE

International Nuclear Information System (INIS)

DeLoach, L.D.; Page, R.H.; Wilke, G.D.

1994-01-01

Tunable infrared laser light may serve as a useful means by which to detect the presence of the targeted effluents. Since optical parametric oscillators (OPOs) have proven to be a versatile method of generating coherent light from the ultraviolet to the mid-infrared, this technology is a promising choice by which to service the CALIOPE applications. In addition, since some uncertainty remains regarding the precise wavelengths and molecules that will be targeted, the deployment of OPOs retains the greatest amount of wavelength flexibility. Another approach that the authors are considering is that of generating tunable infrared radiation directly with a diode-pumped solid state laser (DPSSL). One important advantage of a DPSSL is that it offers flexible pulse format modes that can be tailored to meet the needs of a particular application and target molecule. On the other hand, direct generation by a tunable DPSSL will generally be able to cover a more limited wavelength range than is possible with OPO technology. In support of the CALIOPE objectives the authors are exploring the potential for laser action among a class of materials comprised of transition metal-doped zinc chalcogenide crystals (i.e., ZnS, ZnSe and ZnTe). The Cr 2+ , Co 2+ and Ni 2+ dopants were selected as the most favorable candidates, on the basis of their documented spectral properties in the scientific literature. Thus far, the authors have characterized the absorption and emission properties of these ions in the ZnS and ZnSe crystals. The absorption spectra are used to determine the preferred wavelength at which the crystal should be pumped, while the emission spectra reveal the extent of the tuning range potentially offered by the material. In addition, measurements of the emission lifetime as a function of temperature turn out to be quite useful, since this data is suggestive of the room temperature emission yield

Extending laser plasma accelerators into the mid-IR spectral domain with a next-generation ultra-fast CO2 laser

Science.gov (United States)

Pogorelsky, I. V.; Babzien, M.; Ben-Zvi, I.; Polyanskiy, M. N.; Skaritka, J.; Tresca, O.; Dover, N. P.; Najmudin, Z.; Lu, W.; Cook, N.; Ting, A.; Chen, Y.-H.

2016-03-01

Expanding the scope of relativistic plasma research to wavelengths longer than the λ/≈   0.8-1.1 μm range covered by conventional mode-locked solid-state lasers would offer attractive opportunities due to the quadratic scaling of the ponderomotive electron energy and critical plasma density with λ. Answering this quest, a next-generation mid-IR laser project is being advanced at the BNL ATF as a part of the user facility upgrade. We discuss the technical approach to this conceptually new 100 TW, 100 fs, λ  =   9-11 μm CO2 laser BESTIA (Brookhaven Experimental Supra-Terawatt Infrared at ATF) that encompasses several innovations applied for the first time to molecular gas lasers. BESTIA will enable new regimes of laser plasma accelerators. One example is shock-wave ion acceleration (SWA) from gas jets. We review ongoing efforts to achieve stable, monoenergetic proton acceleration by dynamically shaping the plasma density profile from a hydrogen gas target with laser-produced blast waves. At its full power, 100 TW BESTIA promises to achieve proton beams at an energy exceeding 200 MeV. In addition to ion acceleration in over-critical plasma, the ultra-intense mid-IR BESTIA will open up new opportunities in driving wakefields in tenuous plasmas, expanding the landscape of laser wakefield accelerator (LWFA) studies into the unexplored long-wavelength spectral domain. Simple wavelength scaling suggests that a 100 TW CO2 laser beam will be capable of efficiently generating plasma ‘bubbles’ a thousand times greater in volume compared with a near-IR solid state laser of an equivalent power. Combined with a femtosecond electron linac available at the ATF, this wavelength scaling will facilitate the study of external seeding and staging of LWFAs.

Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

Directory of Open Access Journals (Sweden)

Robert Kucharski

2017-06-01

Full Text Available GaN substrates grown by the ammonothermal method are analyzed by Fast Fourier Transformation Spectroscopy in order to study the impact of doping (both n- and p-type on their transparency in the near-infrared, mid-infrared, and terahertz spectral range. It is shown that the introduction of dopants causes a decrease in transparency of GaN substrates in a broad spectral range which is attributed to absorption on free carriers (n-type samples or dopant ionization (p-type samples. In the mid-infrared the transparency cut-off, which for a semi-insulating GaN is at ~7 µm due to an absorption on a second harmonic of optical phonons, shifts towards shorter wavelengths due to an absorption on free carriers up to ~1 µm at n ~ 1020 cm−3 doping level. Moreover, a semi-insulating GaN crystal shows good transparency in the 1–10 THz range, while for n-and p-type crystal, the transparency in this spectral region is significantly quenched below 1%. In addition, it is shown that in the visible spectral region n-type GaN substrates with a carrier concentration below 1018 cm−3 are highly transparent with the absorption coefficient below 3 cm−1 at 450 nm, a satisfactory condition for light emitting diodes and laser diodes operating in this spectral range.

Cartilage ablation studies using mid-IR free electron laser

Science.gov (United States)

Youn, Jong-In; Peavy, George M.; Venugopalan, Vasan

2005-04-01

The ablation rate of articular cartilage and fibrocartilage (meniscus), were quantified to examine wavelength and tissue-composition dependence of ablation efficiency for selected mid-infrared wavelengths. The wavelengths tested were 2.9 um (water dominant absorption), 6.1 (protein and water absorption) and 6.45 um (protein dominant absorption) generated by the Free Electron Laser (FEL) at Vanderbilt University. The measurement of tissue mass removal using a microbalance during laser ablation was conducted to determine the ablation rates of cartilage. The technique can be accurate over methods such as profilometer and histology sectioning where tissue surface and the crater morphology may be affected by tissue processing. The ablation efficiency was found to be dependent upon the wavelength. Both articular cartilage and meniscus (fibrocartilage) ablations at 6.1 um were more efficient than those at the other wavelengths evaluated. We observed the lowest ablation efficiency of both types of cartilage with the 6.45 um wavelength, possibly due to the reduction in water absorption at this wavelength in comparison to the other wavelengths that were evaluated.

Second harmonic generation spectroscopy in the Reststrahl band of SiC using an infrared free-electron laser

Energy Technology Data Exchange (ETDEWEB)

Paarmann, Alexander, E-mail: alexander.paarmann@fhi-berlin.mpg.de; Razdolski, Ilya; Melnikov, Alexey; Gewinner, Sandy; Schöllkopf, Wieland; Wolf, Martin [Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin (Germany)

2015-08-24

The Reststrahl spectral region of silicon carbide has recently attracted much attention owing to its potential for mid-infrared nanophotonic applications based on surface phonon polaritons (SPhPs). Studies of optical phonon resonances responsible for surface polariton formation, however, have so far been limited to linear optics. In this Letter, we report the first nonlinear optical investigation of the Reststrahl region of SiC, employing an infrared free-electron laser to perform second harmonic generation (SHG) spectroscopy. We observe two distinct resonance features in the SHG spectra, one attributed to resonant enhancement of the nonlinear susceptibility χ{sup (2)} and the other due to a resonance in the Fresnel transmission. Our work clearly demonstrates high sensitivity of mid-infrared SHG to phonon-driven phenomena and opens a route to studying nonlinear effects in nanophotonic structures based on SPhPs.

Power scaling of ultrafast mid-IR source enabled by high-power fiber laser technology

Energy Technology Data Exchange (ETDEWEB)

Zhou, Gengji

2017-11-15

Ultrafast laser sources with high repetition-rate (>10 MHz) and tunable in the mid-infrared (IR) wavelength range of 7-18 μm hold promise for many important spectroscopy applications. Currently, these ultrafast mid- to longwavelength-IR sources can most easily be achieved via difference-frequency generation (DFG) between a pump beam and a signal beam. However, current ultrafast mid- to longwavelength-IR sources feature a low average power, which limits their applications. In this thesis, we propose and demonstrate a novel approach to power scaling of DFG-based ultrafast mid-IR laser sources. The essence of this novel approach is the generation of a high-energy signal beam. Both the pump beam and the signal beam are derived from a home-built Yb-fiber laser system that emits 165-fs pulses centered at 1035 nm with 30-MHz repetition rate and 14.5-W average power (corresponding to 483-nJ pulse energy). We employ fiber-optic self-phase modulation (SPM) to broaden the laser spectrum and generate isolated spectral lobes. Filtering the rightmost spectral lobe leads to femtosecond pulses with >10 nJ pulse energy. Tunable between 1.1-1.2 μm, this SPM-enabled ultrafast source exhibits ∝100 times higher pulse energy than can be obtained from Raman soliton sources in this wavelength range. We use this SPM-enabled source as the signal beam and part of the Yb-fiber laser output as the pump beam. By performing DFG in GaSe crystals, we demonstrate that power scaling of a DFG-based mid-IR source can be efficiently achieved by increasing the signal energy. The resulting mid-IR source is tunable from 7.4 μm to 16.8 μm. Up to 5.04-mW mid-IR pulses centered at 11 μm are achieved. The corresponding pulse energy is 167 pJ, representing nearly one order of magnitude improvement compared with other reported DFG-based mid-IR sources at this wavelength. Despite of low pulse energy, Raman soliton sources have become a popular choice as the signal source. We carry out a detailed study on

Power scaling of ultrafast mid-IR source enabled by high-power fiber laser technology

International Nuclear Information System (INIS)

Zhou, Gengji

2017-11-01

Ultrafast laser sources with high repetition-rate (>10 MHz) and tunable in the mid-infrared (IR) wavelength range of 7-18 μm hold promise for many important spectroscopy applications. Currently, these ultrafast mid- to longwavelength-IR sources can most easily be achieved via difference-frequency generation (DFG) between a pump beam and a signal beam. However, current ultrafast mid- to longwavelength-IR sources feature a low average power, which limits their applications. In this thesis, we propose and demonstrate a novel approach to power scaling of DFG-based ultrafast mid-IR laser sources. The essence of this novel approach is the generation of a high-energy signal beam. Both the pump beam and the signal beam are derived from a home-built Yb-fiber laser system that emits 165-fs pulses centered at 1035 nm with 30-MHz repetition rate and 14.5-W average power (corresponding to 483-nJ pulse energy). We employ fiber-optic self-phase modulation (SPM) to broaden the laser spectrum and generate isolated spectral lobes. Filtering the rightmost spectral lobe leads to femtosecond pulses with >10 nJ pulse energy. Tunable between 1.1-1.2 μm, this SPM-enabled ultrafast source exhibits ∝100 times higher pulse energy than can be obtained from Raman soliton sources in this wavelength range. We use this SPM-enabled source as the signal beam and part of the Yb-fiber laser output as the pump beam. By performing DFG in GaSe crystals, we demonstrate that power scaling of a DFG-based mid-IR source can be efficiently achieved by increasing the signal energy. The resulting mid-IR source is tunable from 7.4 μm to 16.8 μm. Up to 5.04-mW mid-IR pulses centered at 11 μm are achieved. The corresponding pulse energy is 167 pJ, representing nearly one order of magnitude improvement compared with other reported DFG-based mid-IR sources at this wavelength. Despite of low pulse energy, Raman soliton sources have become a popular choice as the signal source. We carry out a detailed study on

Low-confinement high-power semiconductor lasers

NARCIS (Netherlands)

Buda, M.

1999-01-01

This thesis presents the results of studies related to optimisation of high power semiconductor laser diodes using the low confinement concept. This implies a different approach in designing the transversal layer structure before growth and in processing the wafer after growth, for providing the

Broadband mid-infrared superlattice light-emitting diodes

Science.gov (United States)

Ricker, R. J.; Provence, S. R.; Norton, D. T.; Boggess, T. F.; Prineas, J. P.

2017-05-01

InAs/GaSb type-II superlattice light-emitting diodes were fabricated to form a device that provides emission over the entire 3-5 μm mid-infrared transmission window. Variable bandgap emission regions were coupled together using tunnel junctions to emit at peak wavelengths of 3.3 μm, 3.5 μm, 3.7 μm, 3.9 μm, 4.1 μm, 4.4 μm, 4.7 μm, and 5.0 μm. Cascading the structure recycles the electrons in each emission region to emit several wavelengths simultaneously. At high current densities, the light-emitting diode spectra broadened into a continuous, broadband spectrum that covered the entire mid-infrared band. When cooled to 77 K, radiances of over 1 W/cm2 sr were achieved, demonstrating apparent temperatures above 1000 K over the 3-5 μm band. InAs/GaSb type-II superlattices are capable of emitting from 3 μm to 30 μm, and the device design can be expanded to include longer emission wavelengths.

A ZnGeP{sub 2} Optical Parametric Oscillator with Mid-IR Output Power 3 W Pumped by a Tm, Ho:GdVO{sub 4} Laser

Energy Technology Data Exchange (ETDEWEB)

Bao-Quan, Yao; Guo-Li, Zhu; You-Lun, Ju; Yue-Zhu, Wang [National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150080 (China)

2009-02-15

We report an efficient mid-infrared optical parametric oscillator (OPO) pumped by a pulsed Tm,Ho-codoped GdVO4 laser. The 10-W Tm,Ho:GdVO4 laser pumped by a 801 nm diode produces 20ns pulses with a repetition rate of 10kHz at wavelength of 2.048 {mu}m. The ZnGeP{sub 2} (ZGP) OPO produces 15-ns pulses in the spectral regions 3.65-3.8 {mu}m and 4.45-4.65 {mu}m simultaneously. More than 3 W of mid-IR output power can be generated with a total OPO slope efficiency greater than 58% corresponding to incident 2 {mu}m pump power. The diode laser pump to mid-IR optical conversion efficiency is about 12%.

A mid-infrared laser absorption sensor for carbon monoxide and temperature measurements

Science.gov (United States)

Vanderover, Jeremy

A mid-infrared (mid-IR) absorption sensor based on quantum cascade laser (QCL) technology has been developed and demonstrated for high-temperature thermometry and carbon monoxide (CO) measurements in combustion environments. The sensor probes the high-intensity fundamental CO ro-vibrational band at 4.6 mum enabling sensitive measurement of CO and temperature at kHz acquisition rates. Because the sensor operates in the mid-IR CO fundamental band it is several orders of magnitude more sensitive than most of the previously developed CO combustion sensors which utilized absorption in the near-IR overtone bands and mature traditional telecommunications-based diode lasers. The sensor has been demonstrated and validated under operation in both scanned-wavelength absorption and wavelength-modulation spectroscopy (WMS) modes in room-temperature gas cell and high-temperature shock tube experiments with known and specified gas conditions. The sensor has also been demonstrated for CO and temperature measurements in an atmospheric premixed ethylene/air McKenna burner flat flame for a range of equivalence ratios (phi = 0.7-1.4). Demonstration of the sensor under scanned-wavelength direct absorption operation was performed in a room-temperature gas cell (297 K and 0.001-1 atm) allowing validation of the line strengths and line shapes predicted by the HITRAN 2004 spectroscopic database. Application of the sensor in scanned-wavelength mode, at 1-2 kHz acquisition bandwidths, to specified high-temperature shock-heated gases (950-3400 K, 1 atm) provided validation of the sensor for measurements under the high-temperature conditions found in combustion devices. The scanned-wavelength shock tube measurements yielded temperature determinations that deviated by only +/-1.2% (1-sigma deviation) with the reflected shock temperatures and CO mole fraction determinations that deviated by that specified CO mole fraction by only +/-1.5% (1-sigma deviation). These deviations are in fact smaller

Efficient femtosecond mid-infrared pulse generation by dispersivewave radiation in bulk lithium niobate crystal

DEFF Research Database (Denmark)

Zhou, Binbin; Guo, Hairun; Bache, Morten

2014-01-01

We experimentally demonstrate efficient mid-infrared pulse generation by dispersive wave radiation in bulk lithium niobate crystal. Femtosecond mid-IR pulses centering from 2.8–2.92 µm are generated using the single pump wavelengths from 1.25–1.45 µm.......We experimentally demonstrate efficient mid-infrared pulse generation by dispersive wave radiation in bulk lithium niobate crystal. Femtosecond mid-IR pulses centering from 2.8–2.92 µm are generated using the single pump wavelengths from 1.25–1.45 µm....

Mid-Infrared Spectral Properties of IR QSOs

International Nuclear Information System (INIS)

Xia, X. Y.; Cao, C.; Mao, S.; Deng, Z. G.

2008-01-01

We analyse mid-infrared (MIR) spectroscopic properties for 19 ultra-luminous infrared quasars (IR QSOs) in the local universe based on the spectra from the Infrared Spectrograph on board the Spitzer Space Telescope. The MIR properties of IR QSOs are compared with those of optically-selected Palomar-Green QSOs (PG QSOs) and ultra-luminous infrared galaxies (ULIRGs). The average MIR spectral features from ∼5 to 30 μm, including the spectral slopes, 6.2 μm PAH emission strengths and [NeII] 12.81 μm luminosities of IR QSOs, differ from those of PG QSOs. In contrast, IR QSOs and ULIRGs have comparable PAH and [NeII] luminosities. These results are consistent with IR QSOs being at a transitional stage from ULIRGs to classical QSOs. We also find the correlation between the EW (PAH 6.2 μm) and outflow velocities suggests that star formation activities are suppressed by feedback from AGNs and/or supernovae.

Modelling of mid-infrared interferometric signature of hot exozodiacal dust emission

Science.gov (United States)

Kirchschlager, Florian; Wolf, Sebastian; Brunngräber, Robert; Matter, Alexis; Krivov, Alexander V.; Labdon, Aaron

2018-01-01

Hot exozodiacal dust emission was detected in recent surveys around two dozen main-sequence stars at distances of less than 1 au using the H- and K-band interferometry. Due to the high contrast as well as the small angular distance between the circumstellar dust and the star, direct observation of this dust component is challenging. An alternative way to explore the hot exozodiacal dust is provided by mid-infrared interferometry. We analyse the L, M and N bands interferometric signature of this emission in order to find stronger constraints for the properties and the origin of the hot exozodiacal dust. Considering the parameters of nine debris disc systems derived previously, we model the discs in each of these bands. We find that the M band possesses the best conditions to detect hot dust emission, closely followed by L and N bands. The hot dust in three systems - HD 22484 (10 Tau), HD 102647 (β Leo) and HD 177724 (ζ Aql) - shows a strong signal in the visibility functions, which may even allow one to constrain the dust location. In particular, observations in the mid-infrared could help to determine whether the dust piles up at the sublimation radius or is located at radii up to 1 au. In addition, we explore observations of the hot exozodiacal dust with the upcoming mid-infrared interferometer Multi AperTure mid-Infrared SpectroScopic Experiment (MATISSE) at the Very Large Telescope Interferometer.

Dual-channel operation in a synchronously pumped optical parametric oscillator for the generation of broadband mid-infrared coherent light sources.

Science.gov (United States)

Liu, Pei; Wang, Sicong; He, Puyuan; Zhang, Zhaowei

2018-05-01

We report, to the best of our knowledge, a novel approach for generating broadband mid-infrared (mid-IR) light by implementing a dual-channel scheme in a synchronously pumped optical parametric oscillator (SPOPO). Two-channel operation was achieved by inserting a prism pair and two reflection mirrors inside an optical parametric oscillator (OPO) cavity. Pumped by a Yb-fiber laser, the OPO generated an idler wave at ∼3150  nm with a -10  dB bandwidth of ∼13.2  THz, which was twice as much as that of the pump source. This scheme represents a promising technical route to transform conventional SPOPOs into a device capable of generating mid-IR light with very broad instantaneous bandwidth.

E-beam-pumped semiconductor lasers

Science.gov (United States)

Rice, Robert R.; Shanley, James F.; Ruggieri, Neil F.

1995-04-01

The collapse of the Soviet Union opened many areas of laser technology to the West. E-beam- pumped semiconductor lasers (EBSL) were pursued for 25 years in several Soviet Institutes. Thin single crystal screens of II-VI alloys (ZnxCd1-xSe, CdSxSe1-x) were incorporated in laser CRTs to produce scanned visible laser beams at average powers greater than 10 W. Resolutions of 2500 lines were demonstrated. MDA-W is conducting a program for ARPA/ESTO to assess EBSL technology for high brightness, high resolution RGB laser projection application. Transfer of II-VI crystal growth and screen processing technology is underway, and initial results will be reported. Various techniques (cathodoluminescence, one- and two-photon laser pumping, etc.) have been used to assess material quality and screen processing damage. High voltage (75 kV) video electronics were procured in the U.S. to operate test EBSL tubes. Laser performance was documented as a function of screen temperature, beam voltage and current. The beam divergence, spectrum, efficiency and other characteristics of the laser output are being measured. An evaluation of the effect of laser operating conditions upon the degradation rate is being carried out by a design-of-experiments method. An initial assessment of the projected image quality will be performed.

Sensitive Multi-Species Emissions Monitoring: Infrared Laser-Based Detection of Trace-Level Contaminants

Energy Technology Data Exchange (ETDEWEB)

Steill, Jeffrey D. [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Huang, Haifeng [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Hoops, Alexandra A. [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Patterson, Brian D. [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Birtola, Salvatore R. [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Jaska, Mark [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Strecker, Kevin E. [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Chandler, David W. [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Bisson, Soott [Sandia National Lab. (SNL-CA), Livermore, CA (United States)

2014-09-01

This report summarizes our development of spectroscopic chemical analysis techniques and spectral modeling for trace-gas measurements of highly-regulated low-concentration species present in flue gas emissions from utility coal boilers such as HCl under conditions of high humidity. Detailed spectral modeling of the spectroscopy of HCl and other important combustion and atmospheric species such as H 2 O, CO 2 , N 2 O, NO 2 , SO 2 , and CH 4 demonstrates that IR-laser spectroscopy is a sensitive multi-component analysis strategy. Experimental measurements from techniques based on IR laser spectroscopy are presented that demonstrate sub-ppm sensitivity levels to these species. Photoacoustic infrared spectroscopy is used to detect and quantify HCl at ppm levels with extremely high signal-to-noise even under conditions of high relative humidity. Additionally, cavity ring-down IR spectroscopy is used to achieve an extremely high sensitivity to combustion trace gases in this spectral region; ppm level CH 4 is one demonstrated example. The importance of spectral resolution in the sensitivity of a trace-gas measurement is examined by spectral modeling in the mid- and near-IR, and efforts to improve measurement resolution through novel instrument development are described. While previous project reports focused on benefits and complexities of the dual-etalon cavity ring-down infrared spectrometer, here details on steps taken to implement this unique and potentially revolutionary instrument are described. This report also illustrates and critiques the general strategy of IR- laser photodetection of trace gases leading to the conclusion that mid-IR laser spectroscopy techniques provide a promising basis for further instrument development and implementation that will enable cost-effective sensitive detection of multiple key contaminant species simultaneously.

Raman fiber lasers

CERN Document Server

2017-01-01

This book serves as a comprehensive, up-to-date reference about this cutting-edge laser technology and its many new and interesting developments. Various aspects and trends of Raman fiber lasers are described in detail by experts in their fields. Raman fiber lasers have progressed quickly in the past decade, and have emerged as a versatile laser technology for generating high power light sources covering a spectral range from visible to mid-infrared. The technology is already being applied in the fields of telecommunication, astronomy, cold atom physics, laser spectroscopy, environmental sensing, and laser medicine. This book covers various topics relating to Raman fiber laser research, including power scaling, cladding and diode pumping, cascade Raman shifting, single frequency operation and power amplification, mid-infrared laser generation, specialty optical fibers, and random distributed feedback Raman fiber lasers. The book will appeal to scientists, students, and technicians seeking to understand the re...

Influence of temperature on the spectral characteristics of semiconductor lasers in the visible range

Science.gov (United States)

Adamov, A. A.; Baranov, M. S.; Khramov, V. N.

2018-04-01

The results of studies on the effect of temperature on the output spectral characteristics of continuous semiconductor lasers of the visible range are presented. The paper presents the results of studying the spectral-optical radiation parameters of semiconductor lasers, their coherence lengths, and the dependence of the position of the spectral peak of the wavelength on temperature. This is necessary for the selection of the most optimal laser in order to use it for medical ophthalmologic diagnosis. The experiment was carried out using semiconductor laser modules based on a laser diode. The spectra were recorded by using a two-channel automated spectral complex based on the MDR-23 monochromator. Spectral dependences on the temperature of semiconductor lasers are obtained, in the range from 300 to 370 K. The possibility of determining the internal damage to the stabilization of laser modules without opening the case is shown, but only with the use of their spectral characteristics. The obtained data allow taking into account temperature characteristics and further optimization of parameters of such lasers when used in medical practice, in particular, in ophthalmologic diagnostics.

Synchronization scenario of two distant mutually coupled semiconductor lasers

DEFF Research Database (Denmark)

Mulet, Josep; Mirasso, Claudio; Heil, Tilmann

2004-01-01

We present numerical and experimental investigations of the synchronization of the coupling-induced instabilities in two distant mutually coupled semiconductor lasers. In our experiments, two similar Fabry-Perot lasers are coupled via their coherent optical fields. Our theoretical framework is ba...

Preparation and optical properties of TeO2-BaO-ZnO-ZnF2 fluoro-tellurite glass for mid-infrared fiber Raman laser applications

Science.gov (United States)

Li, Jie; Xiao, Xusheng; Gu, Shaoxuan; Xu, Yantao; Zhou, Zhiguang; Guo, Haitao

2017-04-01

A serial of novel fluoro-tellurite glasses with compositions of 60TeO2-20BaO-(20-x)ZnO-xZnF2 (x = 0, 2, 4, 5 and 6 mol%) were prepared. The compositional dependences of glass structural evaluation, Raman gain coefficient, UV-Vis transmission spectrum, IR transmission spectrum, linear refractive index and third-order nonlinearity were analyzed. The results showed that the addition of 6 mol% ZnF2 can further improve the Raman gain coefficient to as well as 52 × 10-11 cm/W and effectively decrease around 73% and 57% absorption coefficients respectively caused by free Osbnd H groups (@3.3 μm) and hydrogen-bonded Osbnd H groups (@4.5 μm) in glass. Addition of ZnF2 does not change the UV-Vis absorption edge, optical band gap energy and infrared region cut-off edge almost, while the linear refraction index and ultrafast third-nonlinearity show unmonotonic changes. These novel fluoro-tellurite glasses may be suitable candidates for using in mid-infrared Raman fiber laser and/or amplifier.

Analytical potential of mid-infrared detection in capillary electrophoresis and liquid chromatography: A review

International Nuclear Information System (INIS)

Kuligowski, Julia; Quintas, Guillermo; Guardia, Miguel de la; Lendl, Bernhard

2010-01-01

Literature published in the last decade concerning the use of mid-infrared spectrometry as a detection system in separation techniques employing a liquid mobile phase is reviewed. In addition to the continued use of isocratic liquid chromatographic (LC) techniques, advances in chemometric data evaluation techniques now allow the use of gradient techniques on a routine basis, thus significantly broadening the range of possible applications of LC-IR. The general trend towards miniaturized separation systems was also followed for mid-IR detection where two key developments are of special importance. Firstly, concerning on-line detection the advent of micro-fabricated flow-cells with inner volumes of only a few nL for transmission as well as attenuated total reflection measurements enabled on-line mid-IR detection in capillary LC and opened the path for the first successful realization of on-line mid-IR detection in capillary zone electrophoresis as well as micellar electrokinetic chromatography. Secondly, concerning off-line detection the use of micro-flow through dispensers now enables to concentrate eluting analytes on dried spots sized a few tens of micrometers, thus matching the dimensions for sensitive detection by mid-IR microscopy. Finally in an attempt to increase detection sensitivity of on-line mid-IR detection, mid-IR quantum cascade lasers have been used. Applications cover the field of food analysis, environmental analysis and the characterization of explosives among others. Best detection sensitivities for on-line and off-line detection have been achieved in miniaturized systems and are in the order of 50 ng and 2 ng on column, respectively.

All-metal coupling and package of semiconductor laser and amplifier with optical fiber

International Nuclear Information System (INIS)

Xu Fenglan; Li Lina; Zhang Yueqing

1992-01-01

The semiconductor laser and optical amplifier made by Changchun Institute of Physics coupled with optical fiber by use of all-metal coupling are represented. The net gain of semiconductor laser amplifier with optical fiber is 14 ∼18 dB

Highly doped semiconductor plasmonic nanoantenna arrays for polarization selective broadband surface-enhanced infrared absorption spectroscopy of vanillin

Science.gov (United States)

Barho, Franziska B.; Gonzalez-Posada, Fernando; Milla, Maria-Jose; Bomers, Mario; Cerutti, Laurent; Tournié, Eric; Taliercio, Thierry

2017-11-01

Tailored plasmonic nanoantennas are needed for diverse applications, among those sensing. Surface-enhanced infrared absorption (SEIRA) spectroscopy using adapted nanoantenna substrates is an efficient technique for the selective detection of molecules by their vibrational spectra, even in small quantity. Highly doped semiconductors have been proposed as innovative materials for plasmonics, especially for more flexibility concerning the targeted spectral range. Here, we report on rectangular-shaped, highly Si-doped InAsSb nanoantennas sustaining polarization switchable longitudinal and transverse plasmonic resonances in the mid-infrared. For small array periodicities, the highest reflectance intensity is obtained. Large periodicities can be used to combine localized surface plasmon resonances (SPR) with array resonances, as shown in electromagnetic calculations. The nanoantenna arrays can be efficiently used for broadband SEIRA spectroscopy, exploiting the spectral overlap between the large longitudinal or transverse plasmonic resonances and narrow infrared active absorption features of an analyte molecule. We demonstrate an increase of the vibrational line intensity up to a factor of 5.7 of infrared-active absorption features of vanillin in the fingerprint spectral region, yielding enhancement factors of three to four orders of magnitude. Moreover, an optimized readout for SPR sensing is proposed based on slightly overlapping longitudinal and transverse localized SPR.

Highly doped semiconductor plasmonic nanoantenna arrays for polarization selective broadband surface-enhanced infrared absorption spectroscopy of vanillin

Directory of Open Access Journals (Sweden)

Barho Franziska B.

2017-11-01

Full Text Available Tailored plasmonic nanoantennas are needed for diverse applications, among those sensing. Surface-enhanced infrared absorption (SEIRA spectroscopy using adapted nanoantenna substrates is an efficient technique for the selective detection of molecules by their vibrational spectra, even in small quantity. Highly doped semiconductors have been proposed as innovative materials for plasmonics, especially for more flexibility concerning the targeted spectral range. Here, we report on rectangular-shaped, highly Si-doped InAsSb nanoantennas sustaining polarization switchable longitudinal and transverse plasmonic resonances in the mid-infrared. For small array periodicities, the highest reflectance intensity is obtained. Large periodicities can be used to combine localized surface plasmon resonances (SPR with array resonances, as shown in electromagnetic calculations. The nanoantenna arrays can be efficiently used for broadband SEIRA spectroscopy, exploiting the spectral overlap between the large longitudinal or transverse plasmonic resonances and narrow infrared active absorption features of an analyte molecule. We demonstrate an increase of the vibrational line intensity up to a factor of 5.7 of infrared-active absorption features of vanillin in the fingerprint spectral region, yielding enhancement factors of three to four orders of magnitude. Moreover, an optimized readout for SPR sensing is proposed based on slightly overlapping longitudinal and transverse localized SPR.

The role of mesoscopic modelling in understanding the response of dental enamel to mid-infrared radiation

Energy Technology Data Exchange (ETDEWEB)

Verde, A Vila [Department of Chemical Engineering, Fenske Laboratory, Pennsylvania State University, University Park, PA 16802 (United States); Ramos, M M D [Department of Physics, University of Minho, 4710-057 Braga (Portugal); Stoneham, A M [London Centre for Nanotechnology and Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT (United Kingdom)

2007-05-21

Human dental enamel has a porous mesostructure at the nanometre to micrometre scales that affects its thermal and mechanical properties relevant to laser treatment. We exploit finite-element models to investigate the response of this mesostructured enamel to mid-infrared lasers (CO{sub 2} at 10.6 {mu}m and Er:YAG at 2.94 {mu}m). Our models might easily be adapted to investigate ablation of other brittle composite materials. The studies clarify the role of pore water in ablation, and lead to an understanding of the different responses of enamel to CO{sub 2} and Er:YAG lasers, even though enamel has very similar average properties at the two wavelengths. We are able to suggest effective operating parameters for dental laser ablation, which should aid the introduction of minimally-invasive laser dentistry. In particular, our results indicate that, if pulses of {approx}10 {mu}s are used, the CO{sub 2} laser can ablate dental enamel without melting, and with minimal damage to the pulp of the tooth. Our results also suggest that pulses with 0.1-1 {mu}s duration can induce high stress transients which may cause unwanted cracking.

The role of mesoscopic modelling in understanding the response of dental enamel to mid-infrared radiation

Science.gov (United States)

Vila Verde, A.; Ramos, M. M. D.; Stoneham, A. M.

2007-05-01

Human dental enamel has a porous mesostructure at the nanometre to micrometre scales that affects its thermal and mechanical properties relevant to laser treatment. We exploit finite-element models to investigate the response of this mesostructured enamel to mid-infrared lasers (CO2 at 10.6 µm and Er:YAG at 2.94 µm). Our models might easily be adapted to investigate ablation of other brittle composite materials. The studies clarify the role of pore water in ablation, and lead to an understanding of the different responses of enamel to CO2 and Er:YAG lasers, even though enamel has very similar average properties at the two wavelengths. We are able to suggest effective operating parameters for dental laser ablation, which should aid the introduction of minimally-invasive laser dentistry. In particular, our results indicate that, if pulses of ap10 µs are used, the CO2 laser can ablate dental enamel without melting, and with minimal damage to the pulp of the tooth. Our results also suggest that pulses with 0.1-1 µs duration can induce high stress transients which may cause unwanted cracking.

The role of mesoscopic modelling in understanding the response of dental enamel to mid-infrared radiation

International Nuclear Information System (INIS)

Verde, A Vila; Ramos, M M D; Stoneham, A M

2007-01-01

Human dental enamel has a porous mesostructure at the nanometre to micrometre scales that affects its thermal and mechanical properties relevant to laser treatment. We exploit finite-element models to investigate the response of this mesostructured enamel to mid-infrared lasers (CO 2 at 10.6 μm and Er:YAG at 2.94 μm). Our models might easily be adapted to investigate ablation of other brittle composite materials. The studies clarify the role of pore water in ablation, and lead to an understanding of the different responses of enamel to CO 2 and Er:YAG lasers, even though enamel has very similar average properties at the two wavelengths. We are able to suggest effective operating parameters for dental laser ablation, which should aid the introduction of minimally-invasive laser dentistry. In particular, our results indicate that, if pulses of ∼10 μs are used, the CO 2 laser can ablate dental enamel without melting, and with minimal damage to the pulp of the tooth. Our results also suggest that pulses with 0.1-1 μs duration can induce high stress transients which may cause unwanted cracking

MBE System for Antimonide Based Semiconductor Lasers

National Research Council Canada - National Science Library

Lester, Luke

1999-01-01

.... SLR-770 inductively coupled plasma (ICP) processing system. The SLR-770 has been invaluable in the study of plasma etching of AlGaAsSb and GaSb-materials that form the backbone of antimonide-based semiconductor lasers...

NATO Advanced Research Workshop on Terahertz and Mid Infrared Radiation

CERN Document Server

Pereira, Mauro F; Terahertz and Mid Infrared Radiation

2011-01-01

Terahertz (THz) and Mid-Infrared (MIR) radiation  (TERA-MIR) can be transmitted through nearly any material without causing biological harm. Novel and rapid methods of detection can be created with devices operation in these spectral ranges allowing scanning for weapons, detecting hidden explosives (including plastic landmines), controlling the quality of food and a host of other exciting applications.  This book focuses on mathematical and physical aspects of the field, on unifying these two spectral domains (THz and MIR) with regard to common sources, detectors, materials and applications, and on key interdisciplinary topics. The main THz and MIR source is the quantum cascade laser (QCL). Thus significant attention is paid to the challenge of turning this advanced technology into affordable commercial devices so as to exploit its enormous potential. However other alternatives to THz QCLs are also presented, e.g.  sub-terahertz imaging from avalanching GaAs bipolar transistors, Josephson junctions as THz ...

MID-INFRARED PHOTOMETRY OF COLD BROWN DWARFS: DIVERSITY IN AGE, MASS, AND METALLICITY

International Nuclear Information System (INIS)

Leggett, S. K.; Burningham, Ben; Jones, H. R. A.; Lucas, P. W.; Pinfield, D. J.; Saumon, D.; Marley, M. S.; Warren, S. J.; Smart, R. L.; Tamura, Motohide

2010-01-01

We present new Spitzer Infrared Array Camera (IRAC) photometry of 12 very late-type T dwarfs: nine have [3.6], [4.5], [5.8], and [8.0] photometry and three have [3.6] and [4.5] photometry only. Combining this with previously published photometry, we investigate trends with type and color that are useful for both the planning and interpretation of infrared surveys designed to discover the coldest T or Y dwarfs. The online appendix provides a collation of MKO-system YJHKL'M' and IRAC photometry for a sample of M, L, and T dwarfs. Brown dwarfs with effective temperature (T eff ) below 700 K emit more than half their flux at wavelengths longer than 3 μm, and the ratio of the mid-infrared flux to the near-infrared flux becomes very sensitive to T eff at these low temperatures. We confirm that the color H (1.6 μm) - [4.5] is a good indicator of T eff with a relatively weak dependence on metallicity and gravity. Conversely, the colors H - K (2.2 μm) and [4.5] - [5.8] are sensitive to metallicity and gravity. Thus, near- and mid-infrared photometry provide useful indicators of the fundamental properties of brown dwarfs, and if temperature and gravity are known, then mass and age can be reliably determined from evolutionary models. There are 12 dwarfs currently known with H- [4.5] >3.0, and 500 K ∼ eff ∼<800 K, which we examine in detail. The ages of the dwarfs in the sample range from very young (0.1-1.0 Gyr) to relatively old (3-12 Gyr). The mass range is possibly as low as 5 Jupiter masses to up to 70 Jupiter masses, i.e., near the hydrogen burning limit. The metallicities also span a large range, from [m/H] = -0.3 to [m/H] = +0.3. The small number of T8-T9 dwarfs found in the UK Infrared Telescope Infrared Deep Sky Survey to date appear to be predominantly young low-mass dwarfs. Accurate mid-infrared photometry of cold brown dwarfs is essentially impossible from the ground, and extensions to the mid-infrared space missions, warm-Spitzer and Wide-Field Infrared

Quantum Cascade Lasers Modulation and Applications

Science.gov (United States)

Luzhansky, Edward

The mid-wave IR (MWIR) spectral band, extending from 3 to 5 microns, is considered to be a low loss atmospheric window. There are several spectral sub-bands with relatively low atmospheric attenuation in this region making it popular for various commercial and military applications. Relatively low thermal and solar background emissions, effective penetration through the natural and anthropogenic obscurants and eye safety add to the long list of advantages of MWIR wavelengths. Quantum Cascade Lasers are compact semiconductor devices capable of operating in MWIR spectrum. They are based on inter-subband transitions in a multiple-quantum-well (QW) hetero-structure, designed by means of band-structure engineering. The inter-subband nature of the optical transition has several key advantages. First, the emission wavelength is primarily a function of the QW thickness. This characteristic allows choosing well-understood and reliable semiconductors for the generation of light in a wavelength range of interest. Second, a cascade process in which tens of photons are generated per injected electron. This cascading process is behind the intrinsic high-power capabilities of QCLs. This dissertation is focused on modulation properties of Quantum Cascade Lasers. Both amplitude and phase/frequency modulations were studied including modulation bandwidth, modulation efficiency and chirp linearity. Research was consisted of the two major parts. In the first part we describe the theory of frequency modulation (FM) response of Distributed Feedback Quantum Cascade Lasers (DFB QCL). It includes cascading effect on the QCL's maximum modulation frequency. The "gain levering" effect for the maximum FM response of the two section QCLs was studied as well. In the second part of research we concentrated on the Pulse Position Amplitude Modulation of a single section QCL. The low complexity, low size, weight and power Mid-Wavelength Infra-Red optical communications transceiver concept is

Mid-infrared interferometric variability of DG Tauri: Implications for the inner-disk structure

Science.gov (United States)

Varga, J.; Gabányi, K. É.; Ábrahám, P.; Chen, L.; Kóspál, Á.; Menu, J.; Ratzka, Th.; van Boekel, R.; Dullemond, C. P.; Henning, Th.; Jaffe, W.; Juhász, A.; Moór, A.; Mosoni, L.; Sipos, N.

2017-08-01

Context. DG Tau is a low-mass pre-main sequence star, whose strongly accreting protoplanetary disk exhibits a so-far enigmatic behavior: its mid-infrared thermal emission is strongly time-variable, even turning the 10 μm silicate feature from emission to absorption temporarily. Aims: We look for the reason for the spectral variability at high spatial resolution and at multiple epochs. Methods: Infrared interferometry can spatially resolve the thermal emission of the circumstellar disk, also giving information about dust processing. We study the temporal variability of the mid-infrared interferometric signal, observed with the VLTI/MIDI instrument at six epochs between 2011 and 2014. We fit a geometric disk model to the observed interferometric signal to obtain spatial information about the disk. We also model the mid-infrared spectra by template fitting to characterize the profile and time dependence of the silicate emission. We use physically motivated radiative transfer modeling to interpret the mid-infrared interferometric spectra. Results: The inner disk (r 1-3 au) spectra show a crystalline silicate feature in emission, similar to the spectra of comet Hale-Bopp. The striking difference between the inner and outer disk spectral feature is highly unusual among T Tauri stars. The mid-infrared variability is dominated by the outer disk. The strength of the silicate feature changed by more than a factor of two. Between 2011 and 2014 the half-light radius of the mid-infrared-emitting region decreased from 1.15 to 0.7 au. Conclusions: For the origin of the absorption we discuss four possible explanations: a cold obscuring envelope, an accretion heated inner disk, a temperature inversion on the disk surface and a misaligned inner geometry. The silicate emission in the outer disk can be explained by dusty material high above the disk plane, whose mass can change with time, possibly due to turbulence in the disk. Based on observations made with the ESO Very Large

Mid-infrared two-photon absorption in an extended-wavelength InGaAs photodetector

Science.gov (United States)

Piccardo, Marco; Rubin, Noah A.; Meadowcroft, Lauren; Chevalier, Paul; Yuan, Henry; Kimchi, Joseph; Capasso, Federico

2018-01-01

We investigate the nonlinear optical response of a commercial extended-wavelength In0.81Ga0.19As uncooled photodetector. Degenerate two-photon absorption in the mid-infrared range is observed using a quantum cascade laser emitting at λ = 4.5 μm as the excitation source. From the measured two-photon photocurrent signal, we extract a two-photon absorption coefficient β(2) = 0.6 ± 0.2 cm/MW, in agreement with the theoretical value obtained from the Eg-3 scaling law. Considering the wide spectral range covered by extended-wavelength InxGa1-xAs alloys, this result holds promise for applications based on two-photon absorption for this family of materials at wavelengths between 1.8 and 5.6 μm.

Mid-infrared emission and Raman spectra analysis of Er(3+)-doped oxyfluorotellurite glasses.

Science.gov (United States)

Chen, Fangze; Xu, Shaoqiong; Wei, Tao; Wang, Fengchao; Cai, Muzhi; Tian, Ying; Xu, Shiqing

2015-04-10

This paper reports on the spectroscopic and structural properties in Er(3+)-doped oxyfluorotellurite glasses. The compositional variation accounts for the evolutions of Raman spectra, Judd-Ofelt parameters, radiative properties, and fluorescent emission. It is found that, when maximum phonon energy changes slightly, phonon density plays a crucial role in quenching the 2.7 μm emission generated by the Er(3+):(4)I11/2→(4)I13/2 transition. The comparative low phonon density contributes strong 2.7 μm emission intensity. The high branching ratio (18.63%) and large emission cross section (0.95×10(-20)  cm(2)) demonstrate that oxyfluorotellurite glass contained with 50 mol.% TeO2 has potential application in the mid-infrared region laser.

Infrared studies of impurity states and ultrafast carrier dynamics in semiconductor quantum structures

Energy Technology Data Exchange (ETDEWEB)

Stehr, D.

2007-12-28

This thesis deals with infrared studies of impurity states, ultrafast carrier dynamics as well as coherent intersubband polarizations in semiconductor quantum structures such as quantum wells and superlattices, based on the GaAs/AlGaAs material system. In the first part it is shown that the 2p{sub z} confined impurity state of a semiconductor quantum well develops into an excited impurity band in the case of a superlattice. This is studied by following theoretically the transition from a single to a multiple quantum well or superlattice by exactly diagonalizing the three-dimensional Hamiltonian for a quantum well system with random impurities. These results also require reinterpretation of previous experimental data. The relaxation dynamics of interminiband transitions in doped GaAs/AlGaAs superlattices in the mid-IR are studied. This involves single-color pump-probe measurements to explore the dynamics at different wavelengths, which is performed with the Rossendorf freeelectron laser (FEL), providing picosecond pulses in a range from 3-200 {mu}m and are used for the first time within this thesis. In these experiments, a fast bleaching of the interminiband transition is observed followed by thermalization and subsequent relaxation, whose time constants are determined to be 1-2 picoseconds. This is followed by an additional component due to carrier cooling in the lower miniband. In the second part, two-color pump-probe measurements are performed, involving the FEL as the pump source and a table-top broad-band tunable THz source for probing the transmission changes. In addition, the dynamics of excited electrons within the minibands is explored and their contribution quantitatively extracted from the measurements. Intersubband absorption experiments of photoexcited carriers in single quantum well structures, measured directly in the time-domain, i.e. probing coherently the polarization between the first and the second subband, are presented. By varying the carrier

Delay induced high order locking effects in semiconductor lasers

Science.gov (United States)

Kelleher, B.; Wishon, M. J.; Locquet, A.; Goulding, D.; Tykalewicz, B.; Huyet, G.; Viktorov, E. A.

2017-11-01

Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types-—a quantum dot based device and a quantum well based device—are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

Laser interferometric method for determining the carrier diffusion length in semiconductors

Energy Technology Data Exchange (ETDEWEB)

Manukhov, V. V. [Saint Petersburg State University (Russian Federation); Fedortsov, A. B.; Ivanov, A. S., E-mail: ivaleks58@gmail.com [Saint Petersburg Mining University (Russian Federation)

2015-09-15

A new laser interferometric method for measuring the carrier diffusion length in semiconductors is proposed. The method is based on the interference–absorption interaction of two laser radiations in a semiconductor. Injected radiation generates additional carriers in a semiconductor, which causes a change in the material’s optical constants and modulation of the probing radiation passed through the sample. When changing the distance between carrier generation and probing points, a decrease in the carrier concentration, which depends on the diffusion length, is recorded. The diffusion length is determined by comparing the experimental and theoretical dependences of the probe signal on the divergence of the injector and probe beams. The method is successfully tested on semiconductor samples with different thicknesses and surface states and can be used in scientific research and the electronics industry.

Design and Characterisation of III-V Semiconductor Nanowire Lasers

Science.gov (United States)

Saxena, Dhruv

The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

Unstable Resonator Mid-Infrared Laser Sources

Science.gov (United States)

2016-02-26

effective refractive indices of the guided mode at the grating ridge and groove were calcu- lated using a 4-layer slab waveguide model with a top clad... waterfall plot of the spectra. This DFB laser device demonstrated a continuous, mode-hop-free, tuning range of 80 nm, from 3057 to 3137 nm at ~2.5...curve is a quadratic fit. The inset shows the grating normal pump configuration (GNC). (b) Waterfall plot of the individual spectra vs. pump position

Mid-infrared followup of cold brown dwarfs: diversity in age, mass and metallicity

Energy Technology Data Exchange (ETDEWEB)

Saumon, Didier [Los Alamos National Laboratory; Leggett, Sandy K [GEMINI OBSERVATORY; Burningham, Ben [HERTFORDSHITE UNIV; Marley, Mark S [NASA AMES; Waren, S J [IMPERIAL COLLEGE LONDON; Jones, H R A [HERTFORDSHIRE U; Pinfield, D J [HERTFORDSHIRE U; Smart, R L [ASTRONOMICAL OBS

2009-01-01

We present new Spitzer IRAC [3.6], [4.5], [5.8] and [8.0] photometry of nine very late-type T dwarfs. Combining this with previously published photometry, we investigate trends with type and color that are useful for both the planning and interpretation of infrared surveys designed to discover the coldest T or Y dwarfs. Brown dwarfs with effective temperature (T{sub eff}) below 700 K emit more than half their flux at wavelengths longer than 3 {micro}m, and the ratio of the mid-infrared flux to the near-infrared flux becomes very sensitive to T{sub eff} at these low temperatures. We confirm that the color H (1.6 {micro}m) - [4.5] is a good indicator of T{sub eff} with a relatively weak dependence on metallicity and gravity. Conversely, the colors H - K (2.2 {micro}m) and [4.5] - [5.8] are sensitive to metallicity and gravity. Thus near- and mid-infrared photometry provide useful indicators of the fundamental properties of brown dwarfs, and if temperature and gravity are known, then mass and age can be reliably determined from evolutionary models. There are twelve dwarfs currently known with H - [4.5] > 3.0, and {approx} 500 < T{sub eff} K {approx}< 800, which we examine in detail. The ages of the dwarfs in the sample range from very young (0.1 - 1.0 Gyr) to relatively old (3 - 12 Gyr). The mass range is possibly as low as 5 Jupiter masses to up to 70 Jupiter masses, i.e. near the hydrogen burning limit. The metallicities also span a large range, from [m/H]= -0.3 to [m/H]= +0.2. The small number of T8 - T9 dwarfs found in the UKIRT Infrared Deep Sky Survey to date appear to be predominantly young low-mass dwarfs. Accurate mid-infrared photometry of cold brown dwarfs is essentially impossible from the ground, and extensions to the mid-infrared space missions warm-Spitzer and WISE are desirable in order to obtain the vital mid-infrared data for cold brown dwarfs, and to discover more of these rare objects.

Achromatic wave plates for the mid-infrared

Science.gov (United States)

Beasley, J. Donald; Marlowe, Philip D.

2012-06-01

Achromatic wave plates are useful in various mid-IR applications, such as analyzing or controlling the spectrum available from CO2 and other lasers, and for the study of IR spectra from distant stars. Their production relies upon the technical skills of those who grow the required high quality crystals and upon those who fabricate the optical parts to the needed precision. Two materials are described - one useful for light in the spectral range of the visible through the near IR and another that functions well in mid-IR applications from 2.5 μm to 11.5 μm. Some limitations imposed by inherent material properties will also be discussed.

Herbig-haro objects and mid-infrared outflows in the VELA C molecular cloud

International Nuclear Information System (INIS)

Zhang, Miaomiao; Wang, Hongchi; Henning, Thomas

2014-01-01

We have performed a deep [S II] λλ6717/6731 wide field Herbig-Haro (HH) object survey toward the Vela C molecular cloud with a sky coverage of about 2 deg 2 . In total, 18 new HH objects, HH 1090-1107, are discovered and the two previously known HH objects, HH 73-74, are also detected in our [S II] images. We also present an investigation of mid-infrared outflows in the Vela C molecular cloud using the Wide-field Infrared Survey Explorer images taken from AllWISE data release. Using the method suggested by Zhang and Wang, 11 extended green objects (EGOs) are identified to be the mid-infrared outflows, including 6 new mid-infrared outflows that have not been detected previously at other wavelengths and 5 mid-infrared counterparts of the HH objects detected in this work. Using the AllWISE Source Catalog and the source classification scheme suggested by Koenig et al., we have identified 56 young stellar object (YSO) candidates in the Vela C molecular cloud. The possible driving sources of the HH objects and EGOs are discussed based on the morphology of HH objects and EGOs and the locations of HH objects, EGOs and YSO candidates. Finally we associate 12 HH objects and 5 EGOs with 10 YSOs and YSO candidates. The median length of the outflows in Vela C is 0.35 pc and the outflows seem to be oriented randomly.

Status of the Northrop Grumman Compact Infrared Free-Electron Laser

Energy Technology Data Exchange (ETDEWEB)

Lehrman, I.S.; Krishnaswamy, J.; Hartley, R.A. [Northrop Grumman Advanced Technology & Development Center, Princeton, NJ (United States)] [and others

1995-12-31

The Compact Infrared Free Electron Laser (CIRFEL) was built as part of a joint collaboration between the Northrop Grumman Corporation and Princeton University to develop FEL`s for use by researchers in the materials, medical and physical sciences. The CIRFEL was designed to lase in the Mid-IR and Far-IR regimes with picosecond pulses, megawatt level peak powers and an average power of a few watts. The micropulse separation is 7 nsec which allows a number of relaxation phenomenon to be observed. The CIRFEL utilizes an RF photocathode gun to produce high-brightness time synchronized electron bunches. The operational status and experimental results of the CERFEL will be presented.

Status of the Northrop Grumman Compact Infrared Free-Electron Laser

International Nuclear Information System (INIS)

Lehrman, I.S.; Krishnaswamy, J.; Hartley, R.A.

1995-01-01

The Compact Infrared Free Electron Laser (CIRFEL) was built as part of a joint collaboration between the Northrop Grumman Corporation and Princeton University to develop FEL's for use by researchers in the materials, medical and physical sciences. The CIRFEL was designed to lase in the Mid-IR and Far-IR regimes with picosecond pulses, megawatt level peak powers and an average power of a few watts. The micropulse separation is 7 nsec which allows a number of relaxation phenomenon to be observed. The CIRFEL utilizes an RF photocathode gun to produce high-brightness time synchronized electron bunches. The operational status and experimental results of the CERFEL will be presented

Single Spatial-Mode Room-Temperature-Operated 3.0 to 3.4 micrometer Diode Lasers

Science.gov (United States)

Frez, Clifford F.; Soibel, Alexander; Belenky, Gregory; Shterengas, Leon; Kipshidze, Gela

2010-01-01

Compact, highly efficient, 3.0 to 3.4 m light emitters are in demand for spectroscopic analysis and identification of chemical substances (including methane and formaldehyde), infrared countermeasures technologies, and development of advanced infrared scene projectors. The need for these light emitters can be currently addressed either by bulky solid-state light emitters with limited power conversion efficiency, or cooled Interband Cascade (IC) semiconductor lasers. Researchers here have developed a breakthrough approach to fabrication of diode mid-IR lasers that have several advantages over IC lasers used for the Mars 2009 mission. This breakthrough is due to a novel design utilizing the strain-engineered quantum-well (QW) active region and quinternary barriers, and due to optimization of device material composition and growth conditions (growth temperatures and rates). However, in their present form, these GaSb-based laser diodes cannot be directly used as a part of sensor systems. The device spectrum is too broad to perform spectroscopic analysis of gas species, and operating currents and voltages are too high. In the current work, the emitters were fabricated as narrow-ridge waveguide index-guided lasers rather than broad stripe-gain guided multimode Fabry-Perot (FP) lasers as was done previously. These narrow-ridge waveguide mid-IR lasers exhibit much lower power consumptions, and can operate in a single spatial mode that is necessary for demonstration of single-mode distributed feedback (DBF) devices for spectroscopic applications. These lasers will enable a new generation of compact, tunable diode laser spectrometers with lower power consumption, reduced complexity, and significantly reduced development costs. These lasers can be used for the detection of HCN, C2H2, methane, and ethane.

Dilute bismides for near and mid-infrared applications

DEFF Research Database (Denmark)

Song, Yuxin; Gu, Yi; Ye, Hong

2013-01-01

Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III–V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in near-infrared (NIR) and mid-infrared (MIR......) optoelectronics. Recent progresses on molecular beam epitaxy (MBE) of novel III-Sb-Bi, i.e. GaSbBi and InSbBi thin films from our group are summarised in this paper. Quantum well structures based on GaSbBi and InGaAsBi aiming for the optical communication window were grown and characterized....

Optically pumped semiconductor lasers: Conception and characterization of a single mode source for Cesium atoms manipulation

International Nuclear Information System (INIS)

Cocquelin, B.

2009-02-01

Lasers currently used in atomic clocks or inertial sensors are suffering from a lack of power, narrow linewidth or compactness for future spatial missions. Optically pumped semiconductor lasers, which combine the approach of classical solid state lasers and the engineering of semiconductor laser, are considered here as a candidate to a metrological laser source dedicated to the manipulation of Cesium atoms in these instruments. These lasers have demonstrated high power laser emission in a circular single transverse mode, as well as single longitudinal mode emission, favoured by the semiconductor structure and the external cavity design. We study the definition and the characterization of a proper semiconductor structure for the cooling and the detection of Cesium atoms at 852 nm. A compact and robust prototype tunable on the Cesium D2 hyperfine structure is built. The laser frequency is locked to an atomic transition thanks to a saturated absorption setup. The emission spectral properties are investigated, with a particular attention to the laser frequency noise and the laser linewidth. Finally, we describe and model the thermal properties of the semiconductor structure, which enables the simulation of the laser power characteristic. The experimental parameters are optimised to obtain the maximum output power with our structure. Thanks to our analysis, we propose several ways to overcome these limitations, by reducing the structure heating. (authors)

Development of the power control system for semiconductor lasers

International Nuclear Information System (INIS)

Kim, Kwang Suk; Kim, Cheol Jung

1997-12-01

For the first year plan of this program, we developed the power control system for semiconductor lasers. We applied the high-current switching mode techniques to fabricating a power control system. Then, we investigated the direct side pumping techniques with GaA1As diode laser bars to laser crystal without pumping optics. We obtained 0.5W average output power from this DPSSL. (author). 54 refs., 3 tabs., 18 figs

Emergence of resonant mode-locking via delayed feedback in quantum dot semiconductor lasers.

Science.gov (United States)

Tykalewicz, B; Goulding, D; Hegarty, S P; Huyet, G; Erneux, T; Kelleher, B; Viktorov, E A

2016-02-22

With conventional semiconductor lasers undergoing external optical feedback, a chaotic output is typically observed even for moderate levels of the feedback strength. In this paper we examine single mode quantum dot lasers under strong optical feedback conditions and show that an entirely new dynamical regime is found consisting of spontaneous mode-locking via a resonance between the relaxation oscillation frequency and the external cavity repetition rate. Experimental observations are supported by detailed numerical simulations of rate equations appropriate for this laser type. The phenomenon constitutes an entirely new mode-locking mechanism in semiconductor lasers.

Quantifying Information Flow between Two Chaotic Semiconductor Lasers Using Symbolic Transfer Entropy

International Nuclear Information System (INIS)

Li Nian-Qiang; Pan Wei; Yan Lian-Shan; Luo Bin; Xu Ming-Feng; Tang Yi-Long

2012-01-01

Symbolic transfer entropy (STE) is employed to quantify the dominant direction of information flow between two chaotic-semiconductor-laser time series. The information flow in unidirectionally and bidirectionally coupled systems was analyzed systematically. Numerical results show that the dependence relationship can be revealed if there exists any coupling between two chaotic semiconductor lasers. More importantly, in both unsynchronized and good synchronization regimes, the STE can be used to quantify the direction of information flow between the lasers, although the former case leads to a better identification. The results thus establish STE as an effective tool for quantifying the direction of information flow between chaotic-laser-based systems

Atomic spectroscopy with diode lasers

International Nuclear Information System (INIS)

Tino, G.M.

1994-01-01

Some applications of semiconductor diode lasers in atomic spectroscopy are discussed by describing different experiments performed with lasers emitting in the visible and in the near-infrared region. I illustrate the results obtained in the investigation of near-infrared transitions of atomic oxygen and of the visible intercombination line of strontium. I also describe how two offset-frequency-locked diode lasers can be used to excite velocity selective Raman transitions in Cs. I discuss the spectral resolution, the accuracy of frequency measurements, and the detection sensitivity achievable with diode lasers. (orig.)

Laser apparatus for surgery and force therapy based on high-power semiconductor and fibre lasers

International Nuclear Information System (INIS)

Minaev, V P

2005-01-01

High-power semiconductor lasers and diode-pumped lasers are considered whose development qualitatively improved the characteristics of laser apparatus for surgery and force therapy, extended the scope of their applications in clinical practice, and enhanced the efficiency of medical treatment based on the use of these lasers. The characteristics of domestic apparatus are presented and their properties related to the laser emission wavelength used in them are discussed. Examples of modern medical technologies based on these lasers are considered. (invited paper)

On increasing the efficiency of a streamer semiconductor laser

International Nuclear Information System (INIS)

Rusakov, K I; Parashchuk, V V

2007-01-01

The influence of intense electric and optical fields produced by a streamer discharge in wide-gap semiconductors on their spectroscopic properties is studied. The effect is manifested in the reversible change of the luminescence parameters of the active medium. Methods are proposed for increasing the service life and efficiency of a streamer laser in limiting regimes, which are based on the use of semiconductor protective layers of a certain crystallographic orientation and a crystal microrelief with the size of elements of the order of the wavelength of light. Streamer emission was observed and studied in new promising Eu:CaGa 2 S 4 and Eu:Ca 4 Ga 2 S 7 materials. (lasers)

High-coherence mid-infrared dual-comb spectroscopy spanning 2.6 to 5.2 μm

Science.gov (United States)

Ycas, Gabriel; Giorgetta, Fabrizio R.; Baumann, Esther; Coddington, Ian; Herman, Daniel; Diddams, Scott A.; Newbury, Nathan R.

2018-04-01

Mid-infrared dual-comb spectroscopy has the potential to supplant conventional Fourier-transform spectroscopy in applications requiring high resolution, accuracy, signal-to-noise ratio and speed. Until now, mid-infrared dual-comb spectroscopy has been limited to narrow optical bandwidths or low signal-to-noise ratios. Using digital signal processing and broadband frequency conversion in waveguides, we demonstrate a mid-infrared dual-comb spectrometer covering 2.6 to 5.2 µm with comb-tooth resolution, sub-MHz frequency precision and accuracy, and a spectral signal-to-noise ratio as high as 6,500. As a demonstration, we measure the highly structured, broadband cross-section of propane from 2,840 to 3,040 cm-1, the complex phase/amplitude spectra of carbonyl sulfide from 2,000 to 2,100 cm-1, and of a methane, acetylene and ethane mixture from 2,860 to 3,400 cm-1. The combination of broad bandwidth, comb-mode resolution and high brightness will enable accurate mid-infrared spectroscopy in precision laboratory experiments and non-laboratory applications including open-path atmospheric gas sensing, process monitoring and combustion.

Intersubband Rabi oscillations in asymmetric nanoheterostructures: implications for a tunable continuous-wave source of a far-infrared and THz radiation.

Science.gov (United States)

Kukushkin, V A

2012-06-01

A tunable continuous-wave source of a far-infrared and THz radiation based on a semiconductor nanoheterostructure with asymmetric quantum wells is suggested. It utilizes Rabi oscillations at a transition between quantum well subbands excited by external femtosecond pulses of a mid-infrared electromagnetic field. Due to quantum well broken inversion symmetry the subbands possess different average dipole moments, which enables the creation of polarization at the Rabi frequency as the subband populations change. It is shown that if this polarization is excited so that it is periodic in space, then, though being pulsed, it can produce continuous-wave output radiation. Changing the polarization space period and the time intervals between the exciting pulses, one can tune the frequency of this radiation throughout the far-infrared and THz range. In the present work a concrete multiple quantum well heterostructure design and a scheme of its space-periodic polarization are suggested. It is shown that for existing sources of mid-infrared femtosecond pulses the proposed scheme can provide a continuous-wave output power of order the power of far-infrared and THz quantum cascade lasers. Being added to the possibility of its output frequency tuning, this can make the suggested device attractive for fundamental research and various applications.

Broadband tunability of gain-flattened quantum-well semiconductor lasers with an external grating

International Nuclear Information System (INIS)

Mittelstein, M.; Mehuys, D.; Yariv, A.; Sarfaty, R.; Ungar, J.E.

1989-01-01

Semiconductor injection lasers are known to be tunable over a range of order kΒ · T. Quantum-well lasers, in particular, are shown to exhibit flattened, broadband gain spectra at a particular pumping condition. The gain requirement for a grating-tuned external cavity configuration is examined and is applied to a semiconductor quantum-well laser with an optimized length of gain region. The coupled-cavity formalism is employed to examine the conditions for continuous tuning. The possible tuning range of double-heterostructure lasers is compared to that of quantum-well lasers. The predicted broadband tunability of quantum-well lasers is confirmed experimentally by grating-tuning of uncoated lasers exceeding 120 nm, with single, longitudinal mode output power exceeding 300 mW

Quantum cascade lasers, systems, and applications in Europe

Science.gov (United States)

Lambrecht, Armin

2005-03-01

Since the invention of the Quantum Cascade Laser (QCL) a decade ago an impressive progress has been achieved from first low temperature pulsed laser emission to continuous wave operation at room temperature. Distributed feedback (DFB) lasers working in pulsed mode at ambient temperatures and covering a broad spectral range in the mid infrared (MIR) are commercially available now. For many industrial applications e.g. automotive exhaust control and process monitoring, laser spectroscopy is an established technique, generally using near infrared (NIR) diode lasers. However, the mid infrared (MIR) spectral region is of special interest because of much stronger absorption lines compared to NIR. The status of QCL devices, system development and applications is reviewed. Special emphasis is given to the situation in Europe where a remarkable growth of QCL related R&D can be observed.

Semiconductor-metal phase transition of vanadium dioxide nanostructures on silicon substrate: Applications for thermal control of spacecraft

International Nuclear Information System (INIS)

Leahu, G. L.; Li Voti, R.; Larciprete, M. C.; Belardini, A.; Mura, F.; Sibilia, C.; Bertolotti, M.; Fratoddi, I.

2013-01-01

We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide (VO2) film deposited on silicon wafer. The VO2 phase transition is studied in the mid-infrared (MIR) region by analyzing the transmittance and the reflectance measurements, and the calculated emissivity. The temperature behaviour of the emissivity during the SMT put into evidence the phenomenon of the anomalous absorption in VO2 which has been explained by applying the Maxwell Garnett effective medium approximation theory, together with a strong hysteresis phenomenon, both useful to design tunable thermal devices to be applied for the thermal control of spacecraft. We have also applied the photothermal radiometry in order to study the changes in the modulated emissivity induced by laser. Experimental results show how the use of these techniques represent a good tool for a quantitative measurement of the optothermal properties of vanadium dioxide based structures

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation.

Science.gov (United States)

Wan, W J; Li, H; Zhou, T; Cao, J C

2017-03-08

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification.

Mid-infrared Spectroscopy/Bioimaging: Moving toward MIR optical biopsy

DEFF Research Database (Denmark)

Seddon, Angela B.; Napier, Bruce; Lindsay, Ian

2016-01-01

), with its ability to enable in vivo medical diagnosis, is particularly interesting. In fact, the European Commission provides support for a major effort to develop the technology through its Framework Seven (FP7) project called MINERVA (MId- to-NEaR- infrared spectroscopy for improVed medical diAgnostics)....

Silicon nitride photonics: from visible to mid-infrared wavelengths

Science.gov (United States)

Micó, Gloria; Bru, Luis A.; Pastor, Daniel; Doménech, David; Fernández, Juan; Sánchez, Ana; Cirera, Josep M.; Domínguez, Carlos; Muñoz, Pascual

2018-02-01

Silicon nitride has received a lot of attention during the last ten years, for applications such as bio-photonics, tele/datacom, optical signal processing and sensing. In this paper, firstly an updated review of the state of the art of silicon nitride photonics integration platforms will be provided. Secondly, our developments on a moderate confinement Si3N4 platform in the near-infrared will be presented. Finally, our steps towards establishing a Si3N4 based platform for broadband operation spanning from visible to mid-infrared wavelengths will be introduced.

Resonantly enhanced nonlinear optics in semiconductor quantum wells: An application to sensitive infrared detection

International Nuclear Information System (INIS)

Yelin, S.F.; Hemmer, P.R.

2002-01-01

A novel class of coherent nonlinear optical phenomena, involving induced transparency in semiconductor quantum wells, is considered in the context of a particular application to sensitive long-wavelength infrared detection. It is shown that the strongest decoherence mechanisms can be suppressed or mitigated, resulting in substantial enhancement of nonlinear optical effects in semiconductor quantum wells

A semiconductor laser device

Energy Technology Data Exchange (ETDEWEB)

Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

1984-03-17

A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

FY 2005 Infrared Photonics Final Report

Energy Technology Data Exchange (ETDEWEB)

Anheier, Norman C.; Allen, Paul J.; Ho, Nicolas; Krishnaswami, Kannan; Johnson, Bradley R.; Sundaram, S. K.; Riley, Bradley M.; Martinez, James E.; Qiao, Hong (Amy); Schultz, John F.

2005-12-01

Research done by the Infrared Photonics team at Pacific Northwest National Laboratory (PNNL) is focused on developing miniaturized integrated optics for mid-wave infrared (MWIR) and long-wave infrared (LWIR) sensing applications by exploiting the unique optical and material properties of chalcogenide glass. PNNL has developed thin-film deposition capabilities, direct laser writing techniques, infrared photonic device demonstration, holographic optical element design and fabrication, photonic device modeling, and advanced optical metrology—all specific to chalcogenide glass. Chalcogenide infrared photonics provides a pathway to quantum cascade laser (QCL) transmitter miniaturization. QCLs provide a viable infrared laser source for a new class of laser transmitters capable of meeting the performance requirements for a variety of national security sensing applications. The high output power, small size, and superb stability and modulation characteristics of QCLs make them amenable for integration as transmitters into ultra-sensitive, ultra-selective point sampling and remote short-range chemical sensors that are particularly useful for nuclear nonproliferation missions. During FY 2005, PNNL’s Infrared Photonics research team made measurable progress exploiting the extraordinary optical and material properties of chalcogenide glass to develop miniaturized integrated optics for mid-wave infrared (MWIR) and long-wave infrared (LWIR) sensing applications. We investigated sulfur purification methods that will eventually lead to routine production of optical quality chalcogenide glass. We also discovered a glass degradation phenomenon and our investigation uncovered the underlying surface chemistry mechanism and developed mitigation actions. Key research was performed to understand and control the photomodification properties. This research was then used to demonstrate several essential infrared photonic devices, including LWIR single-mode waveguide devices and

Comparing the use of 4.6 um lasers versus 10.6 um lasers for mitigating damage site growth on fused silica surfaces

Energy Technology Data Exchange (ETDEWEB)

Yang, S T; Matthews, M J; Elhadj, S; Cooke, D; Guss, G M; Draggoo, V G; Wegner, P J

2010-10-21

The advantage of using mid-infrared (IR) 4.6 {micro}m lasers, versus far-infrared 10.6 {micro}m lasers, for mitigating damage growth on fused silica is investigated. In contrast to fused silica's high absorption at 10.6 {micro}m, silica absorption at 4.6 {micro}m is two orders of magnitude less. The much reduced absorption at 4.6 {micro}m enables deep heat penetration into fused silica when it is heated using the mid-IR laser, which in turn leads to more effective mitigation of damage sites with deep cracks. The advantage of using mid-IR versus far-IR laser for damage growth mitigation under non-evaporative condition is quantified by defining a figure of merit (FOM) that relates the crack healing depth to laser power required. Based on our FOM, we show that for damage cracks up to at least 500 {micro}m in depth, mitigation using a 4.6 {micro}m mid-IR laser is more efficient than mitigation using a 10.6 {micro}m far-IR laser.

Discrete parametric band conversion in silicon for mid-infrared applications.

Science.gov (United States)

Tien, En-Kuang; Huang, Yuewang; Gao, Shiming; Song, Qi; Qian, Feng; Kalyoncu, Salih K; Boyraz, Ozdal

2010-10-11

Silicon photonics has great potential for mid-wave-infrared applications. The dispersion of waveguide can be manipulated by waveguide dimension and cladding materials. Simulation shows that <3 μm wide conversion can be achieved by tuning the pump wavelength.

MID-INFRARED SELECTION OF ACTIVE GALACTIC NUCLEI WITH THE WIDE-FIELD INFRARED SURVEY EXPLORER. I. CHARACTERIZING WISE-SELECTED ACTIVE GALACTIC NUCLEI IN COSMOS

International Nuclear Information System (INIS)

Stern, Daniel; Assef, Roberto J.; Eisenhardt, Peter; Benford, Dominic J.; Blain, Andrew; Cutri, Roc; Griffith, Roger L.; Jarrett, T. H.; Masci, Frank; Tsai, Chao-Wei; Yan, Lin; Dey, Arjun; Lake, Sean; Petty, Sara; Wright, E. L.; Stanford, S. A.; Harrison, Fiona; Madsen, Kristin

2012-01-01

The Wide-field Infrared Survey Explorer (WISE) is an extremely capable and efficient black hole finder. We present a simple mid-infrared color criterion, W1 – W2 ≥ 0.8 (i.e., [3.4]–[4.6] ≥0.8, Vega), which identifies 61.9 ± 5.4 active galactic nucleus (AGN) candidates per deg 2 to a depth of W2 ∼ 15.0. This implies a much larger census of luminous AGNs than found by typical wide-area surveys, attributable to the fact that mid-infrared selection identifies both unobscured (type 1) and obscured (type 2) AGNs. Optical and soft X-ray surveys alone are highly biased toward only unobscured AGNs, while this simple WISE selection likely identifies even heavily obscured, Compton-thick AGNs. Using deep, public data in the COSMOS field, we explore the properties of WISE-selected AGN candidates. At the mid-infrared depth considered, 160 μJy at 4.6 μm, this simple criterion identifies 78% of Spitzer mid-infrared AGN candidates according to the criteria of Stern et al. and the reliability is 95%. We explore the demographics, multiwavelength properties and redshift distribution of WISE-selected AGN candidates in the COSMOS field.

Generating Efficient Femtosecond Mid-infrared Pulse by Single Near-infrared Pump Wavelength in Bulk Nonlinear Crystal Without Phase-matching

DEFF Research Database (Denmark)

Zhou, Binbin; Guo, Hairun; Bache, Morten

2014-01-01

We experimentally demonstrate efficient mid-infrared pulse generation by dispersive wave radiation in bulk lithium niobate crystal. Femtosecond mid-IR pulses centering from 2.8-2.92 μm are generated using the single pump wavelengths from 1.25-1.45 μm. © 2014 Optical Society of America...

Scanning mid-IR laser apparatus with eye tracking for refractive surgery

Science.gov (United States)

Telfair, William B.; Yoder, Paul R., Jr.; Bekker, Carsten; Hoffman, Hanna J.; Jensen, Eric F.

1999-06-01

A robust, real-time, dynamic eye tracker has been integrated with the short pulse mid-infrared laser scanning delivery system previously described. This system employs a Q- switched Nd:YAG laser pumped optical parametric oscillator operating at 2.94 micrometers. Previous ablation studies on human cadaver eyes and in-vivo cat eyes demonstrated very smooth ablations with extremely low damage levels similar to results with an excimer. A 4-month healing study with cats indicated no adverse healing effects. In order to treat human eyes, the tracker is required because the eyes move during the procedure due to both voluntary and involuntary motions such as breathing, heartbeat, drift, loss of fixation, saccades and microsaccades. Eye tracking techniques from the literature were compared. A limbus tracking system was best for this application. Temporal and spectral filtering techniques were implemented to reduce tracking errors, reject stray light, and increase signal to noise ratio. The expanded-capability system (IRVision AccuScan 2000 Laser System) has been tested in the lab on simulated eye targets, glass eyes, cadaver eyes, and live human subjects. Circular targets ranging from 10-mm to 14-mm diameter were successfully tracked. The tracker performed beyond expectations while the system performed myopic photorefractive keratectomy procedures on several legally blind human subjects.

SPITZER'S MID-INFRARED VIEW ON AN OUTER-GALAXY INFRARED DARK CLOUD CANDIDATE TOWARD NGC 7538

NARCIS (Netherlands)

Frieswijk, W. F.; Spaans, M.; Shipman, R. F.; Teyssier, D.; Carey, S. J.; Tielens, A. G. G. M.

2008-01-01

Infrared dark clouds (IRDCs) represent the earliest observed stages of clustered star formation, characterized by large column densities of cold and dense molecular material observed in silhouette against a bright background of mid-IR emission. Up to now, IRDCs were predominantly known toward the

Organic solid-state lasers

CERN Document Server

Forget, Sébastien

2013-01-01

Organic lasers are broadly tunable coherent sources, potentially compact, convenient and manufactured at low-costs. Appeared in the mid 60’s as solid-state alternatives for liquid dye lasers, they recently gained a new dimension after the demonstration of organic semiconductor lasers in the 90's. More recently, new perspectives appeared at the nanoscale, with organic polariton and surface plasmon lasers. After a brief reminder to laser physics, a first chapter exposes what makes organic solid-state organic lasers specific. The laser architectures used in organic lasers are then reviewed, with a state-of-the-art review of the performances of devices with regard to output power, threshold, lifetime, beam quality etc. A survey of the recent trends in the field is given, highlighting the latest developments with a special focus on the challenges remaining for achieving direct electrical pumping of organic semiconductor lasers. A last chapter covers the applications of organic solid-state lasers.

Semiconductor Mode-Locked Lasers for Optical Communication Systems

DEFF Research Database (Denmark)

Yvind, Kresten

2003-01-01

The thesis deals with the design and fabrication of semiconductor mode-locked lasers for use in optical communication systems. The properties of pulse sources and characterization methods are described as well as requirements for application in communication systems. Especially, the importance of...

Efficiency of soft tissue incision with a novel 445-nm semiconductor laser.

Science.gov (United States)

Braun, Andreas; Kettner, Moritz; Berthold, Michael; Wenzler, Johannes-Simon; Heymann, Paul Günther Baptist; Frankenberger, Roland

2018-01-01

Using a 445-nm semiconductor laser for tissue incision, an effective cut is expected due to the special absorption properties of blue laser light in soft tissues. The aim of the present study was the histological evaluation of tissue samples after incision with a 445-nm diode laser. Forty soft tissue specimens were obtained from pork oral mucosa and mounted on a motorized linear translation stage. The handpiece of a high-frequency surgery device, a 970-nm semiconductor laser, and a 445-nm semiconductor laser were connected to the slide, allowing a constant linear movement (2 mm/s) and the same distance of the working tip to the soft tissue's surface. Four incisions were made each: (I) 970-nm laser with conditioned fiber tip, contact mode at 3-W cw; (II-III): 445-nm laser with non-conditioned fiber tip, contact mode at 2-W cw, and non-contact mode (1 mm) at 2 W; and (IV): high-frequency surgery device with straight working tip, 90° angulation, contact mode at 50 W. Histological analysis was performed after H&E staining of the embedded specimens at 35-fold magnification. The comparison of the incision depths showed a significant difference depending on the laser wavelength and the selected laser parameters. The highest incision depth was achieved with the 445-nm laser contact mode (median depth 0.61 mm, min 0.26, max 1.17, interquartile range 0.58) (p laser, a higher cutting efficiency can be expected when compared with a 970-nm diode laser and high-frequency surgery. Even the 445-nm laser application in non-contact mode shows clinically acceptable incision depths without signs of extensive soft tissue denaturation.

Reduced graphene oxide mid-infrared photodetector at 300 K

Energy Technology Data Exchange (ETDEWEB)

Fernandes, Gustavo E.; Kim, Jin Ho; Oller, Declan; Xu, Jimmy [School of Engineering, Brown University, Box D, Providence, Rhode Island 02912 (United States)

2015-09-14

We report on uncooled mid-infrared photovoltaic responses at 300 K arising in heterojunctions of reduced graphene oxide with p-Si. Two major photoresponse spectral peaks are observed, one in the near infrared starting at 1.1 μm corresponding to electron-hole pair generation in the Si substrate, and another at wavelengths below 2.5 μm, arising from properties of the reduced graphene oxide-Si heterojunction. Our analysis of the current-voltage characteristics at various temperatures suggests that the two materials form a type-II (broken-gap) heterojunction, with a characteristic transition between direct tunneling to field emission, to over-the-barrier excitation with increasing reverse voltage. Illumination was found to affect the onset of the transition between direct tunneling and field-emission, suggesting that the mid infrared response results from the excitation of minority carriers (electrons) from the Si and their collection in the reduced graphene oxide contact. The photoresponse near 1.1 μm showed a time constant at least five times faster than the one at 2.5 μm, which points to surface defects as well as high series resistance and capacitance as potentially limiting factors in this mode of operation. With proper device engineering considerations, these devices could be promising as a graphene-based platform for infrared sensing.

Theory of semiconductor lasers from basis of quantum electronics to analyses of the mode competition phenomena and noise

CERN Document Server

Yamada, Minoru

2014-01-01

This book provides a unified and complete theory for semiconductor lasers, covering topics ranging from the principles of classical and quantum mechanics to highly advanced levels for readers who need to analyze the complicated operating characteristics generated in the real application of semiconductor lasers.   The author conducts a theoretical analysis especially on the instabilities involved in the operation of semiconductor lasers. A density matrix into the theory for semiconductor lasers is introduced and the formulation of an improved rate equation to help understand the mode competition phenomena which cause the optical external feedback noise is thoroughly described from the basic quantum mechanics. The derivation of the improved rate equation will allow readers to extend the analysis for the different types of semiconductor materials and laser structures they deal with.   This book is intended not only for students and academic researchers but also for engineers who develop lasers for the market, ...

Study of GeSn Alloy for Low Cost Monolithic Mid Infrared Quantum Well Sensor

Directory of Open Access Journals (Sweden)

Prakash PAREEK

2017-02-01

Full Text Available This paper focuses on theoretical study of Tin incorporated group IV alloys particularly GeSn and design of quantum well sensor for mid infrared sensing applications. Initially, the physics behind the selection of material for midinfrared sensor is explained. The importance of controlling strain in GeSn alloy is also explained. The physical background and motivation for incorporation of Tin(Sn in Germanium is briefly narrated. Eigen energy states for different Sn concentrations are obtained for strain compensated quantum well in G valley conduction band (GCB, heavy hole (HH band and light hole (LH band by solving coupled Schrödinger and Poisson equations simultaneously. Sn concentration dependent absorption spectra for HH- GCB transition reveals that significant absorption observed in mid infrared range (3-5 µm. So, Ge1-x Snx quantum well can be used for mid infrared sensing applications.

Material Engineering for Monolithic Semiconductor Mode-Locked Lasers

DEFF Research Database (Denmark)

Kulkova, Irina

This thesis is devoted to the materials engineering for semiconductor monolithic passively mode-locked lasers (MLLs) as a compact energy-efficient source of ultrashort optical pulses. Up to the present day, the achievement of low-noise sub-picosecond pulse generation has remained a challenge...

Optically pumped semiconductor lasers for atomic and molecular physics

Science.gov (United States)

Burd, S.; Leibfried, D.; Wilson, A. C.; Wineland, D. J.

2015-03-01

Experiments in atomic, molecular and optical (AMO) physics rely on lasers at many different wavelengths and with varying requirements on spectral linewidth, power and intensity stability. Optically pumped semiconductor lasers (OPSLs), when combined with nonlinear frequency conversion, can potentially replace many of the laser systems currently in use. We are developing a source for laser cooling and spectroscopy of Mg+ ions at 280 nm, based on a frequency quadrupled OPSL with the gain chip fabricated at the ORC at Tampere Univ. of Technology, Finland. This OPSL system could serve as a prototype for many other sources used in atomic and molecular physics.

Silicon Photonic Waveguides for Near- and Mid-Infrared Regions

Science.gov (United States)

Stankovic, S.; Milosevic, M.; Timotijevic, B.; Yang, P. Y.; Teo, E. J.; Crnjanski, J.; Matavulj, P.; Mashanovich, G. Z.

2007-11-01

The basic building block of every photonic circuit is a waveguide. In this paper we investigate the most popular silicon waveguide structures in the form of a silicon-on-insulator rib waveguide. We also analyse two structures that can find applications in mid- and long-wave infrared regions: free-standing and hollow core omnidirectional waveguides.

Mid-Infrared Silicate Dust Features in Seyfert 1 Spectra

Science.gov (United States)

Thompson, Grant D.; Levenson, N. A.; Sirocky, M. M.; Uddin, S.

2007-12-01

Silicate dust emission dominates the mid-infrared spectra of galaxies, and the dust produces two spectral features, at 10 and 18 μm. These features' strengths (in emission or absorption) and peak wavelengths reveal the geometry of the dust distribution, and they are sensitive to the dust composition. We examine mid-infrared spectra of 32 Seyfert 1 active galactic nuclei (AGN), observed with the Infrared Spectrograph aboard the Spitzer Space Telescope. In the spectra, we typically find the shorter-wavelength feature in emission, at an average peak wavelength of 10.0 μm, although it is known historically as the "9.7 μm" feature. In addition, peak wavelength increases with feature strength. The 10 and 18 μm feature strengths together are sensitive to the dust geometry surrounding the central heating engine. Numerical calculations of radiative transfer distinguish between clumpy and smooth distributions, and we find that the surroundings of these AGN (the obscuring "tori" of unified AGN schemes) are clumpy. Polycyclic aromatic hydrocarbon (PAH) features are associated with star formation, and we find strong PAH emission (luminosity ≥ 1042 erg/s) in only four sources, three of which show independent evidence for starbursts. We will explore the effects of luminosity on dust geometry and chemistry in a comparison sample of quasars. We acknowledge work supported by the NSF under grant number 0237291.

Melting phenomenon and laser annealing in semiconductors

International Nuclear Information System (INIS)

Narayan, J.

1981-03-01

The work on annealing of displacement damage, dissolution of boron precipitates, and the broadening of dopant profiles in semiconductors after treating with ruby and dye laser pulses is reviewed in order to provide convincing evidence for the melting phenomenon and illustrate the mechanism associated with laser annealing. The nature of the solid-liquid interface and the interface instability during rapid solidification is considered in detail. It is shown that solute concentrations after pulsed laser annealing can far exceed retrograde maxima values. However, there is a critical solute concentration above which a planar solid-liquid interface becomes unstable and breaks into a cellular structure. The solute concentrations and cell sizes associated with this instability are calculated using a perturbation theory, and compared with experimental results

Yb-fiber-pumped mid-infrared picosecond optical parametric oscillator tunable across 6.2-6.7 µm

Science.gov (United States)

Kumar, S. Chaitanya; Casals, J. Canals; Parsa, S.; Zawilski, K. T.; Schunemann, P. G.; Ebrahim-Zadeh, M.

2018-06-01

We report a high-average-power picosecond optical parametric oscillator (OPO) tunable in the mid-infrared (mid-IR) based on CdSiP2 synchronously pumped by an Yb-fiber laser at 80 MHz repetition rate. Successful operation of this high-repetition-rate singly-resonant picosecond OPO has been enabled by the improved CSP crystal quality over a long interaction length. The OPO can be tuned across 1264-1284 nm in the near-IR signal and 6205-6724 nm in the mid-IR idler by temperature tuning the CSP crystal over 39-134 °C. By deploying a 5% output coupler for the resonant signal, we have extracted up to 44 mW of average power in the near-IR and up to 95 mW of non-resonant idler power at 6205 nm at 6.3% total conversion efficiency, with > 50 mW over > 55% of the mid-IR tuning range. We have investigated temperature-tuning characteristics of the OPO and compared the data with the theoretical calculations using the recent Sellmeier and thermo-optic coefficients for CdSiP2. The signal pulses from the OPO exhibit a Gaussian pulse duration of 19 ps centered at 1284 nm. We have also studied the output power stability of the OPO, resulting in a passive stability better than 1.9% rms for the near-IR signal and 2.4% rms for the mid-IR idler, measured over > 17 h, with both beams in high spatial quality.

Efficient Mid-Infrared Supercontinuum Generation in Tapered Large Mode Area Chalcogenide Photonic Crystal Fibers

DEFF Research Database (Denmark)

Petersen, Christian Rosenberg; Engelsholm, Rasmus Dybbro; Markos, Christos

2017-01-01

Mid-infrared supercontinuum spanning from 1.8-9  μm with an output power of 41.5 mW is demonstrated by pumping tapered large mode area chalcogenide photonic crystal fibers using a 4 μm optical parametric source.......Mid-infrared supercontinuum spanning from 1.8-9  μm with an output power of 41.5 mW is demonstrated by pumping tapered large mode area chalcogenide photonic crystal fibers using a 4 μm optical parametric source....

Electronic structure of semiconductor interfaces

Energy Technology Data Exchange (ETDEWEB)

Herman, F

1983-02-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

Electronic structure of semiconductor interfaces

International Nuclear Information System (INIS)

Herman, F.

1983-01-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

Chaotic bursting in semiconductor lasers

Science.gov (United States)

Ruschel, Stefan; Yanchuk, Serhiy

2017-11-01

We investigate the dynamic mechanisms for low frequency fluctuations in semiconductor lasers subjected to delayed optical feedback, using the Lang-Kobayashi model. This system of delay differential equations displays pronounced envelope dynamics, ranging from erratic, so called low frequency fluctuations to regular pulse packages, if the time scales of fast oscillations and envelope dynamics are well separated. We investigate the parameter regions where low frequency fluctuations occur and compute their Lyapunov spectra. Using the geometric singular perturbation theory, we study this intermittent chaotic behavior and characterize these solutions as bursting slow-fast oscillations.

Compact near-IR and mid-IR cavity ring down spectroscopy device

Science.gov (United States)

Miller, J. Houston (Inventor)

2011-01-01

This invention relates to a compact cavity ring down spectrometer for detection and measurement of trace species in a sample gas using a tunable solid-state continuous-wave mid-infrared PPLN OPO laser or a tunable low-power solid-state continuous wave near-infrared diode laser with an algorithm for reducing the periodic noise in the voltage decay signal which subjects the data to cluster analysis or by averaging of the interquartile range of the data.

Theory for passive mode-locking in semiconductor laser structures including the effects of self-phase modulation, dispersion and pulse collisions

NARCIS (Netherlands)

Koumans, R.G.M.P.; Roijen, van R.

1996-01-01

We present a theory for passive mode-locking in semiconductor laser structures using a semiconductor laser amplifier and absorber. The mode-locking system is described in terms of the different elements in the semiconductor laser structure. We derive mode-locking conditions and show how other

Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

OpenAIRE

Cappuccio, Joseph C., Jr.

1988-01-01

Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

Optical Activation of Germanium Plasmonic Antennas in the Mid-Infrared

Science.gov (United States)

Fischer, Marco P.; Schmidt, Christian; Sakat, Emilie; Stock, Johannes; Samarelli, Antonio; Frigerio, Jacopo; Ortolani, Michele; Paul, Douglas J.; Isella, Giovanni; Leitenstorfer, Alfred; Biagioni, Paolo; Brida, Daniele

2016-07-01

Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recombination redshifts the plasma frequency. The full behavior of the structures is modeled by the electrodynamic response established by an electron-hole plasma in a regular array of antennas.

Plastic lab-on-a-chip for fluorescence excitation with integrated organic semiconductor lasers.

Science.gov (United States)

Vannahme, Christoph; Klinkhammer, Sönke; Lemmer, Uli; Mappes, Timo

2011-04-25

Laser light excitation of fluorescent markers offers highly sensitive and specific analysis for bio-medical or chemical analysis. To profit from these advantages for applications in the field or at the point-of-care, a plastic lab-on-a-chip with integrated organic semiconductor lasers is presented here. First order distributed feedback lasers based on the organic semiconductor tris(8-hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2-methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM), deep ultraviolet induced waveguides, and a nanostructured microfluidic channel are integrated into a poly(methyl methacrylate) (PMMA) substrate. A simple and parallel fabrication process is used comprising thermal imprint, DUV exposure, evaporation of the laser material, and sealing by thermal bonding. The excitation of two fluorescent marker model systems including labeled antibodies with light emitted by integrated lasers is demonstrated.

Cutting efficiency of a mid-infrared laser on human enamel.

Science.gov (United States)

Levy, G; Koubi, G F; Miserendino, L J

1998-02-01

In this study, the cutting ability of a newly developed dental laser was compared with a dental high-speed handpiece and rotary bur for removal of enamel. Measurements of the volume of tissue removed, energy emitted, and time of exposure were used to quantify the ablation rate (rate of tissue removal) for each test group and compared. Cutting efficiency (mm3/s) of the laser was calculated based on the mean volume of tissue removed per pulse (mm3/pulse) and unit energy expended (mm3/J) over the range of applied powers (2, 4, 6, and 8 W). The specimens were then examined by light microscopy and scanning electron micrographs for qualitative analysis of the amount of remaining debris and the presence of the smear layer on the prepared enamel surface. Calculations of the cutting efficiency of the laser over the range of powers tested revealed a linear relationship with the level of applied power. The maximum average rate of tissue removal by the laser was 0.256 mm3/s at 8 W, compared with 0.945 mm3/s by the dental handpiece. Light microscopy and scanning electron micrograph examinations revealed a reduction in the amount of remaining debris and smear layer in the laser-prepared enamel surfaces, compared with the conventional method. Based on the results of this study, the cutting efficiency of the high-speed handpiece and dental bur was 3.7 times greater than the laser over the range of powers tested, but the laser appeared to create a cleaner enamel surface with minimal thermal damage. Further modifications of the laser system are suggested for improvement of laser cutting efficiency.

Mid-infrared response of reduced graphene oxide and its high-temperature coefficient of resistance

Directory of Open Access Journals (Sweden)

Haifeng Liang

2014-10-01

Full Text Available Much effort has been made to study the formation mechanisms of photocurrents in graphene and reduced graphene oxide films under visible and near-infrared light irradiation. A built-in field and photo-thermal electrons have been applied to explain the experiments. However, much less attention has been paid to clarifying the mid-infrared response of reduced graphene oxide films at room temperature. Thus, mid-infrared photoresponse and annealing temperature-dependent resistance experiments were carried out on reduced graphene oxide films. A maximum photocurrent of 75 μA was observed at room temperature, which was dominated by the bolometer effect, where the resistance of the films decreased as the temperature increased after they had absorbed light. The electrons localized in the defect states and the residual oxygen groups were thermally excited into the conduction band, forming a photocurrent. In addition, a temperature increase of 2 °C for the films after light irradiation for 2 minutes was observed using absorption power calculations. This work details a way to use reduced graphene oxide films that contain appropriate defects and residual oxygen groups as bolometer-sensitive materials in the mid-infrared range.

Measurement of the emission spectrum of a semiconductor laser using laser-feedback interferometry.

Science.gov (United States)

Keeley, James; Freeman, Joshua; Bertling, Karl; Lim, Yah L; Mohandas, Reshma A; Taimre, Thomas; Li, Lianhe H; Indjin, Dragan; Rakić, Aleksandar D; Linfield, Edmund H; Davies, A Giles; Dean, Paul

2017-08-03

The effects of optical feedback (OF) in lasers have been observed since the early days of laser development. While OF can result in undesirable and unpredictable operation in laser systems, it can also cause measurable perturbations to the operating parameters, which can be harnessed for metrological purposes. In this work we exploit this 'self-mixing' effect to infer the emission spectrum of a semiconductor laser using a laser-feedback interferometer, in which the terminal voltage of the laser is used to coherently sample the reinjected field. We demonstrate this approach using a terahertz frequency quantum cascade laser operating in both single- and multiple-longitudinal mode regimes, and are able to resolve spectral features not reliably resolved using traditional Fourier transform spectroscopy. We also investigate quantitatively the frequency perturbation of individual laser modes under OF, and find excellent agreement with predictions of the excess phase equation central to the theory of lasers under OF.

Mid-Infrared Observations of the White Dwarf Brown Dwarf Binary GD 1400

OpenAIRE

Farihi, J.; Zuckerman, B.; Becklin, E. E.

2005-01-01

Fluxes are measured for the DA white dwarf plus brown dwarf pair GD 1400 with the Infrared Array Camera on the {\\em Spitzer Space Telescope}. GD 1400 displays an infrared excess over the entire $3-8\\mu$m region consistent with the presence of a mid- to late-type L dwarf companion. A discussion is given regarding current knowledge of this unique system.

Temperature controlled infrared broadband cloaking with the bilayer coatings of semiconductor and superconductor

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiaohua [College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); College of Physics and Electronics, Yancheng Teachers University, Yancheng 224051 (China); Liu, Youwen, E-mail: ywliu@nuaa.edu.cn [College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); Feng, Yuncai [College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)

2015-06-15

Highlights: • We first propose that the cloak is composed of the bilayer of semiconductor and superconductor. • We realize the infrared broadband cloaking based on the scattering cancellation method. • The cloaking frequency can be tuned by external temperature. - Abstract: The infrared broadband tunable cloaking have been proposed and investigated with the bilayer coating materials of semiconductor (n-Ge) and high-temperature superconductor (YBa{sub 2}Cu{sub 3}O{sub 7}), whose cloaking frequency can be controlled by external temperature. The analytical solution is derived based on the scattering cancellation cloaking technique from the Mie scattering theory, and the full-wave numerical simulation is performed by the finite element method. The calculated and simulated results have demonstrated that this invisibility cloak may reduce the total scattering cross section of the composite structure of 90% over a broad frequency band of nearly 20 THz, and the infrared cloaking frequency can be tuned by the external temperature. It can provide a feasible way to design a broadband tunable cloak.

Nanoimprinted organic semiconductor laser pumped by a light-emitting diode.

Science.gov (United States)

Tsiminis, Georgios; Wang, Yue; Kanibolotsky, Alexander L; Inigo, Anto R; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

2013-05-28

An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabrication compatible with mass-produced LEDs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

International Nuclear Information System (INIS)

Eliseev, P G

2012-01-01

A survey is presented of works on creation and investigation of semiconductor lasers during 1957 – 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability. (special issue devoted to the 90th anniversary of n.g. basov)

Athermal design for mid-wave infrared lens with long EFFL

Science.gov (United States)

Bai, Yu; Xing, Tingwen

2016-10-01

When the environment temperature has changed, then each parameter in infrared lens has also changed, thus the image quality became bad, so athermal technology is one of key technology in designing infrared lens. The temperature influence of each parameter in infrared lens is analyzed in the paper. In the paper, an athermal mid-wave infrared optical system with long focal length by Code-v optical design software was presented. The parameters of the athermal infrared system are 4.0 f/number, 704mm effective focal length (EFL) , 1° field of view and 3.7-4.8 μm spectrum region 100% cold shield efficiency. When the spatial frequency is 16lp/mm, the Modulation Transfer Function (MTF) of all the field of view was above 0.5 from the working temperature range -40° to 60°. From the image quality and thermal analysis result, we knew that the lens had good athermal performance.

Thermal effects of an ICL-based mid-infrared CH4 sensor within a wide atmospheric temperature range

Science.gov (United States)

Ye, Weilin; Zheng, Chuantao; Sanchez, Nancy P.; Girija, Aswathy V.; He, Qixin; Zheng, Huadan; Griffin, Robert J.; Tittel, Frank K.

2018-03-01

The thermal effects of an interband cascade laser (ICL) based mid-infrared methane (CH4) sensor that uses long-path absorption spectroscopy were studied. The sensor performance in the laboratory at a constant temperature of ∼25 °C was measured for 5 h and its Allan deviation was ∼2 ppbv with a 1 s averaging time. A LabVIEW-based simulation program was developed to study thermal effects on infrared absorption and a temperature compensation technique was developed to minimize these effects. An environmental test chamber was employed to investigate the thermal effects that occur in the sensor system with variation of the test chamber temperature between 10 and 30 °C. The thermal response of the sensor in a laboratory setting was observed using a 2.1 ppm CH4 standard gas sample. Indoor/outdoor CH4 measurements were conducted to evaluate the sensor performance within a wide atmospheric temperature range.

Mid-infrared materials and devices on a Si platform for optical sensing

Science.gov (United States)

Singh, Vivek; Lin, Pao Tai; Patel, Neil; Lin, Hongtao; Li, Lan; Zou, Yi; Deng, Fei; Ni, Chaoying; Hu, Juejun; Giammarco, James; Soliani, Anna Paola; Zdyrko, Bogdan; Luzinov, Igor; Novak, Spencer; Novak, Jackie; Wachtel, Peter; Danto, Sylvain; Musgraves, J David; Richardson, Kathleen; Kimerling, Lionel C; Agarwal, Anuradha M

2014-01-01

In this article, we review our recent work on mid-infrared (mid-IR) photonic materials and devices fabricated on silicon for on-chip sensing applications. Pedestal waveguides based on silicon are demonstrated as broadband mid-IR sensors. Our low-loss mid-IR directional couplers demonstrated in SiNx waveguides are useful in differential sensing applications. Photonic crystal cavities and microdisk resonators based on chalcogenide glasses for high sensitivity are also demonstrated as effective mid-IR sensors. Polymer-based functionalization layers, to enhance the sensitivity and selectivity of our sensor devices, are also presented. We discuss the design of mid-IR chalcogenide waveguides integrated with polycrystalline PbTe detectors on a monolithic silicon platform for optical sensing, wherein the use of a low-index spacer layer enables the evanescent coupling of mid-IR light from the waveguides to the detector. Finally, we show the successful fabrication processing of our first prototype mid-IR waveguide-integrated detectors. PMID:27877641

Mathematical modeling of thermal runaway in semiconductor laser operation

NARCIS (Netherlands)

Smith, W.R.

2000-01-01

A mathematical model describing the coupling of electrical, optical and thermal effects in semiconductor lasers is introduced. Through a systematic asymptotic expansion, the governing system of differential equations is reduced to a single second-order boundary value problem. This highly nonlinear

Silicon Nitride Photonic Integration Platforms for Visible, Near-Infrared and Mid-Infrared Applications

Science.gov (United States)

Micó, Gloria; Pastor, Daniel; Pérez, Daniel; Doménech, José David; Fernández, Juan; Baños, Rocío; Alemany, Rubén; Sánchez, Ana M.; Cirera, Josep M.; Mas, Roser

2017-01-01

Silicon nitride photonics is on the rise owing to the broadband nature of the material, allowing applications of biophotonics, tele/datacom, optical signal processing and sensing, from visible, through near to mid-infrared wavelengths. In this paper, a review of the state of the art of silicon nitride strip waveguide platforms is provided, alongside the experimental results on the development of a versatile 300 nm guiding film height silicon nitride platform. PMID:28895906

CCST [Center for Compound Semiconductor Technology] research briefs

International Nuclear Information System (INIS)

Zipperian, T.E.; Voelker, E.R.

1989-12-01

This paper discusses the following topics: theoretical predictions of valence and conduction band offsets in III-V semiconductors; reflectance modulation of a semiconductor superlattice optical mirror; magnetoquantum oscillations of the phonon-drag thermoelectric power in quantum wells; correlation between photoluminescence line shape and device performance of p-channel strained-layer materials; control of threading dislocations in heteroepitaxial structures; improved growth of CdTe on GaAs by patterning; role of structure threading dislocations in relaxation of highly strained single-quantum-well structures; InAlAs growth optimization using reflection mass spectrometry; nonvolatile charge storage in III-V heterostructures; optically triggered thyristor switches; InAsSb strained-layer superlattice infrared detectors with high detectivities; resonant periodic gain surface-emitting semiconductor lasers; performance advantages of strained-quantum-well lasers in AlGaAs/InGaAs; optical integrated circuit for phased-array radar antenna control; and deposition and novel device fabrication from Tl 2 Ca 2 Ba 2 Cu 3 O y thin films

IV-VI mid-IR tunable lasers and detectors with external resonant cavities

Science.gov (United States)

Zogg, H.; Rahim, M.; Khiar, A.; Fill, M.; Felder, F.; Quack, N.; Blunier, S.; Dual, J.

2009-08-01

Wavelength tunable emitters and detectors in the mid-IR wavelength region allow applications including thermal imaging and spectroscopy. Such devices may be realized using a resonant cavity. By mechanically changing the cavity length with MEMS mirror techniques, the wavelengths may be tuned over a considerable range. Vertical external cavity surface emitting lasers (VECSEL) may be applied for gas spectroscopy. Resonant cavity enhanced detectors (RCED) are sensitive at the cavity resonance only. They may be applied for low resolution spectroscopy, and, when arrays of such detectors are realized, as multicolor IR-FPA or IR-AFPA (IR-adaptive focal plane arrays). We review mid-infrared RCEDs and VECSELs using narrow gap IV-VI (lead chalcogenide) materials like PbTe and PbSe as the active medium. IV-VIs are fault tolerant and allow easy wavelength tuning. The VECSELs operate up to above room temperature and emit in the 4 - 5 μm range with a PbSe active layer. RCEDs with PbTe absorbing layers above 200 K operating temperature have higher sensitivities than the theoretical limit for a similar broad-band detector coupled with a passive tunable band-filter.

Graphene-based mid-infrared room-temperature pyroelectric bolometers with ultrahigh temperature coefficient of resistance.

Science.gov (United States)

Sassi, U; Parret, R; Nanot, S; Bruna, M; Borini, S; De Fazio, D; Zhao, Z; Lidorikis, E; Koppens, F H L; Ferrari, A C; Colli, A

2017-01-31

There is a growing number of applications demanding highly sensitive photodetectors in the mid-infrared. Thermal photodetectors, such as bolometers, have emerged as the technology of choice, because they do not need cooling. The performance of a bolometer is linked to its temperature coefficient of resistance (TCR, ∼2-4% K -1 for state-of-the-art materials). Graphene is ideally suited for optoelectronic applications, with a variety of reported photodetectors ranging from visible to THz frequencies. For the mid-infrared, graphene-based detectors with TCRs ∼4-11% K -1 have been demonstrated. Here we present an uncooled, mid-infrared photodetector, where the pyroelectric response of a LiNbO 3 crystal is transduced with high gain (up to 200) into resistivity modulation for graphene. This is achieved by fabricating a floating metallic structure that concentrates the pyroelectric charge on the top-gate capacitor of the graphene channel, leading to TCRs up to 900% K -1 , and the ability to resolve temperature variations down to 15 μK.

Active mode locking of quantum cascade lasers in an external ring cavity.

Science.gov (United States)

Revin, D G; Hemingway, M; Wang, Y; Cockburn, J W; Belyanin, A

2016-05-05

Stable ultrashort light pulses and frequency combs generated by mode-locked lasers have many important applications including high-resolution spectroscopy, fast chemical detection and identification, studies of ultrafast processes, and laser metrology. While compact mode-locked lasers emitting in the visible and near infrared range have revolutionized photonic technologies, the systems operating in the mid-infrared range where most gases have their strong absorption lines, are bulky and expensive and rely on nonlinear frequency down-conversion. Quantum cascade lasers are the most powerful and versatile compact light sources in the mid-infrared range, yet achieving their mode-locked operation remains a challenge, despite dedicated effort. Here we report the demonstration of active mode locking of an external-cavity quantum cascade laser. The laser operates in the mode-locked regime at room temperature and over the full dynamic range of injection currents.

Fabrication of metal/semiconductor nanocomposites by selective laser nano-welding.

Science.gov (United States)

Yu, Huiwu; Li, Xiangyou; Hao, Zhongqi; Xiong, Wei; Guo, Lianbo; Lu, Yongfeng; Yi, Rongxing; Li, Jiaming; Yang, Xinyan; Zeng, Xiaoyan

2017-06-01

A green and simple method to prepare metal/semiconductor nanocomposites by selective laser nano-welding metal and semiconductor nanoparticles was presented, in which the sizes, phases, and morphologies of the components can be maintained. Many types of nanocomposites (such as Ag/TiO 2 , Ag/SnO 2 , Ag/ZnO 2 , Pt/TiO 2 , Pt/SnO 2 , and Pt/ZnO) can be prepared by this method and their corresponding performances were enhanced.

High-Power Single-Mode 2.65-micron InGaAsSb/AlInGaAsSb Diode Lasers

Science.gov (United States)

Frez, Clifford F.; Briggs, Ryan M.; Forouhar, Siamak; Borgentun, Carl E.; Gupta, James

2013-01-01

InGaAsSb multi-quantum well structures. The device fabrication utilizes etched index-coupled gratings in the top AlGaAsSb cladding of the laser chip along the ridge waveguide, whereas commercial lasers that emit close to this wavelength include loss-coupled metal gratings that limit the output power of the laser. Semiconductor-laser-based spectrometers can be used to replace gas sensors currently used in industry and government. With the availability of high-power laser sources at mid-infrared wavelengths, sensors can target strong fundamental gas absorption lines to maximize instrument sensitivity.

Long-wave, infrared laser-induced breakdown (LIBS) spectroscopy emissions from energetic materials.

Science.gov (United States)

Yang, Clayton S-C; Brown, Ei E; Hommerich, Uwe; Jin, Feng; Trivedi, Sudhir B; Samuels, Alan C; Snyder, A Peter

2012-12-01

Laser-induced breakdown spectroscopy (LIBS) has shown great promise for applications in chemical, biological, and explosives sensing and has significant potential for real-time standoff detection and analysis. In this study, LIBS emissions were obtained in the mid-infrared (MIR) and long-wave infrared (LWIR) spectral regions for potential applications in explosive material sensing. The IR spectroscopy region revealed vibrational and rotational signatures of functional groups in molecules and fragments thereof. The silicon-based detector for conventional ultraviolet-visible LIBS operations was replaced with a mercury-cadmium-telluride detector for MIR-LWIR spectral detection. The IR spectral signature region between 4 and 12 μm was mined for the appearance of MIR and LWIR-LIBS emissions directly indicative of oxygenated breakdown products as well as dissociated, and/or recombined sample molecular fragments. Distinct LWIR-LIBS emission signatures from dissociated-recombination sample molecular fragments between 4 and 12 μm are observed for the first time.

Central Stars of Mid-Infrared Nebulae Discovered with Spitzer and WISE

Science.gov (United States)

Gvaramadze, V. V.; Kniazev, A. Y.

2017-02-01

Searches for compact mid-IR nebulae with the Spitzer Space Telescope and the Wide-field Infrared Survey Explorer (WISE), accompanied by spectroscopic observations of central stars of these nebulae led to the discovery of many dozens of massive stars at different evolutionary stages, of which the most numerous are candidate luminous blue variables (LBVs). In this paper, we give a census of candidate and confirmed Galactic LBVs revealed with Spitzer and WISE, and present some new results of spectroscopic observations of central stars of mid-IR nebulae.

High-Speed Operation of Interband Cascade Lasers

Science.gov (United States)

Soibel, Alexander; Hill, Cory J.; Keo, Sam A.; Wright, Malcom W.; Farr, William H.; Yang, Rui Q.; Liu, H. C.

2010-01-01

Optical sources operating in the atmospheric window of 3-5 microns are of particular interest for the development of free-space optical communication link. It is more advantageous to operate the free-space optical communication link in 3-5-microns atmospheric transmission window than at the telecom wavelength of 1.5 m due to lower optical scattering, scintillation, and background radiation. However, the realization of optical communications at the longer wavelength has encountered significant difficulties due to lack of adequate optical sources and detectors operating in the desirable wavelength regions. Interband Cascade (IC) lasers are novel semiconductor lasers that have a great potential for the realization of high-power, room-temperature optical sources in the 3-5-microns wavelength region, yet no experimental work, until this one, was done on high-speed direct modulation of IC lasers. Here, highspeed interband cascade laser, operating at wavelength 3.0 m, has been developed and the first direct measurement of the laser modulation bandwidth has been performed using a unique, highspeed quantum well infrared photodetector (QWIP). The developed laser has modulation bandwidth exceeding 3 GHz. This constitutes a significant increase of the IC laser modulation bandwidth over currently existing devices. This result has demonstrated suitability of IC lasers as a mid-IR light source for multi-GHz free-space optical communications links

Optical characterization of semiconductors infrared, Raman, and photoluminescence spectroscopy

CERN Document Server

Perkowitz, Sidney

1993-01-01

This is the first book to explain, illustrate, and compare the most widely used methods in optics: photoluminescence, infrared spectroscopy, and Raman scattering. Written with non-experts in mind, the book develops the background needed to understand the why and how of each technique, but does not require special knowledge of semiconductors or optics. Each method is illustrated with numerous case studies. Practical information drawn from the authors experience is given to help establish optical facilities, including commercial sources for equipment, and experimental details. For industrial sci

Scaling of an Optically Pumped Mid-Infrared Rubidium Laser

Science.gov (United States)

2015-03-26

beam, and the saturation intensity, Isat , was calculated using Equation 4.6: = ℎ( + ) , (6) where h is the...4.91 mm2, the intensity of the laser at a pump energy of 0.05 mJ was 10.2 mW/cm2. Thus I/ Isat ~ 290, so ∆νsat should have been about 17 times... Isat ~ 5796, so ∆νsat should have been about 76∆νD, in reasonable agreement with the experimental result of 53∆νD. Rb Laser Output Energy vs. Pump

Semiconductor laser irradiation improves root canal sealing during routine root canal therapy

Science.gov (United States)

Hu, Xingxue; Wang, Dashan; Cui, Ting; Yao, Ruyong

2017-01-01

Objective To evaluate the effect of semiconductor laser irradiation on root canal sealing after routine root canal therapy (RCT). Methods Sixty freshly extracted single-rooted human teeth were randomly divided into six groups (n = 10). The anatomic crowns were sectioned at the cementoenamel junction and the remaining roots were prepared endodontically with conventional RCT methods. Groups A and B were irradiated with semiconductor laser at 1W for 20 seconds; Groups C and D were ultrasonically rinsed for 60 seconds as positive control groups; Groups E and F without treatment of root canal prior to RCT as negative control groups. Root canal sealing of Groups A, C and E were evaluated by measurements of apical microleakage. The teeth from Groups B, D and F were sectioned, and the micro-structures were examined with scanning electron microscopy (SEM). One way ANOVA and LSD-t test were used for statistical analysis (α = .05). Results The apical sealing of both the laser irradiated group and the ultrasonic irrigated group were significantly different from the control group (pirrigated group (p>0.5). SEM observation showed that most of the dentinal tubules in the laser irradiation group melted, narrowed or closed, while most of the dentinal tubules in the ultrasonic irrigation group were filled with tooth paste. Conclusion The application of semiconductor laser prior to root canal obturation increases the apical sealing of the roots treated. PMID:28957407

Mid-Infrared Observations of Possible Intergalactic Star Forming Regions in the Leo Ring

Science.gov (United States)

Giroux, Mark; Smith, B.; Struck, C.

2011-05-01

Within the Leo group of galaxies lies a gigantic loop of intergalactic gas known as the Leo Ring. Not clearly associated with any particular galaxy, its origin remains uncertain. It may be a primordial intergalactic cloud alternatively, it may be a collision ring, or have a tidal origin. Combining archival Spitzer images of this structure with published UV and optical data, we investigate the mid-infrared properties of possible knots of star formation in the ring. These sources are very faint in the mid-infrared compared to star forming regions in the tidal features of interacting galaxies. This suggests they are either deficient in dust, or they may not be associated with the ring.

BRIGHTNESS AND FLUCTUATION OF THE MID-INFRARED SKY FROM AKARI OBSERVATIONS TOWARD THE NORTH ECLIPTIC POLE

International Nuclear Information System (INIS)

Pyo, Jeonghyun; Jeong, Woong-Seob; Matsumoto, Toshio; Matsuura, Shuji

2012-01-01

We present the smoothness of the mid-infrared sky from observations by the Japanese infrared astronomical satellite AKARI. AKARI monitored the north ecliptic pole (NEP) during its cold phase with nine wave bands covering from 2.4 to 24 μm, out of which six mid-infrared bands were used in this study. We applied power-spectrum analysis to the images in order to search for the fluctuation of the sky brightness. Observed fluctuation is explained by fluctuation of photon noise, shot noise of faint sources, and Galactic cirrus. The fluctuations at a few arcminutes scales at short mid-infrared wavelengths (7, 9, and 11 μm) are largely caused by the diffuse Galactic light of the interstellar dust cirrus. At long mid-infrared wavelengths (15, 18, and 24 μm), photon noise is the dominant source of fluctuation over the scale from arcseconds to a few arcminutes. The residual fluctuation amplitude at 200'' after removing these contributions is at most 1.04 ± 0.23 nW m –2 sr –1 or 0.05% of the brightness at 24 μm and at least 0.47 ± 0.14 nW m –2 sr –1 or 0.02% at 18 μm. We conclude that the upper limit of the fluctuation in the zodiacal light toward the NEP is 0.03% of the sky brightness, taking 2σ error into account.

Fibre-optic laser-assisted infrared tumour diagnostics (FLAIR)

Science.gov (United States)

Bindig, U.; Müller, G.

2005-08-01

Laser based fibre-optic surgery procedures are commonly used in minimal invasive surgery. Despite the development of precise and efficient laser systems there are also innovative attempts in the field of bio-medical diagnostics. As a direct result of the tissue's optical properties most applications are focused on the visible wavelength range of the spectrum. The extension of the spectrum up to the mid-infrared (IR) region will offer a broad range of possibilities for novel strategies with a view to non-invasive diagnostics in medicine. We describe a method to detect differences between diseased and normal tissues, which involve Fourier transform IR microspectroscopy and fibre-optics methods. Regions of interest on 10 µm thin tissue sections were mapped using an IR microscope in transmission mode. After IR-mapping, the samples were analysed using standard pathological techniques. Quadratic discriminant and correlation analyses were applied to the IR maps obtained allowing differentiation between cancerous and normal tissue. The use of optical fibres, transparent in the mid-IR, allowed measurements to be made in the attenuated total reflectance (ATR)-mode at a remote location. The IR sensor is in contact with the sample that shows characteristic absorption lines. The total transmission of the fibre and the sample will decrease at these lines. This method can be used to determine the absorption of a sample in a non-destructive manner. In this paper we report on our efforts to develop an IR fibre-optic sensor for tissue identification as well as to differentiate between malignant and healthy tissue in vivo. We also describe the technical design of the laboratory set-up and the results of developments made. Silver halide fibres and a special sensor tip were used for the ATR measurements on tissue specimens. The results indicate that fibre-optic IR spectrometry will be a useful tool for bio-diagnostics.

Fibre-optic laser-assisted infrared tumour diagnostics (FLAIR)

International Nuclear Information System (INIS)

Bindig, U; Mueller, G

2005-01-01

Laser based fibre-optic surgery procedures are commonly used in minimal invasive surgery. Despite the development of precise and efficient laser systems there are also innovative attempts in the field of bio-medical diagnostics. As a direct result of the tissue's optical properties most applications are focused on the visible wavelength range of the spectrum. The extension of the spectrum up to the mid-infrared (IR) region will offer a broad range of possibilities for novel strategies with a view to non-invasive diagnostics in medicine. We describe a method to detect differences between diseased and normal tissues, which involve Fourier transform IR microspectroscopy and fibre-optics methods. Regions of interest on 10 μm thin tissue sections were mapped using an IR microscope in transmission mode. After IR-mapping, the samples were analysed using standard pathological techniques. Quadratic discriminant and correlation analyses were applied to the IR maps obtained allowing differentiation between cancerous and normal tissue. The use of optical fibres, transparent in the mid-IR, allowed measurements to be made in the attenuated total reflectance (ATR)-mode at a remote location. The IR sensor is in contact with the sample that shows characteristic absorption lines. The total transmission of the fibre and the sample will decrease at these lines. This method can be used to determine the absorption of a sample in a non-destructive manner. In this paper we report on our efforts to develop an IR fibre-optic sensor for tissue identification as well as to differentiate between malignant and healthy tissue in vivo. We also describe the technical design of the laboratory set-up and the results of developments made. Silver halide fibres and a special sensor tip were used for the ATR measurements on tissue specimens. The results indicate that fibre-optic IR spectrometry will be a useful tool for bio-diagnostics

THE MID-INFRARED AND NEAR-ULTRAVIOLET EXCESS EMISSIONS OF QUIESCENT GALAXIES ON THE RED SEQUENCE

International Nuclear Information System (INIS)

Ko, Jongwan; Lee, Jong Chul; Hwang, Ho Seong; Sohn, Young-Jong

2013-01-01

We study the mid-infrared (IR) and near-ultraviolet (UV) excess emissions of spectroscopically selected quiescent galaxies on the optical red sequence. We use the Wide-field Infrared Survey Explorer mid-IR and Galaxy Evolution Explorer near-UV data for a spectroscopic sample of galaxies in the Sloan Digital Sky Survey Data Release 7 to study the possible connection between quiescent red-sequence galaxies with and without mid-IR/near-UV excess. Among 648 12 μm detected quiescent red-sequence galaxies without Hα emission, 26% and 55% show near-UV and mid-IR excess emissions, respectively. When we consider only bright (M r n 4000 than those without mid-IR and near-UV excess emissions. We also find that mid-IR weighted mean stellar ages of quiescent red-sequence galaxies with mid-IR excess are larger than those with near-UV excess, and smaller than those without mid-IR and near-UV excess. The environmental dependence of the fraction of quiescent red-sequence galaxies with mid-IR and near-UV excess seems strong even though the trends of quiescent red-sequence galaxies with near-UV excess differ from those with mid-IR excess. These results indicate that the recent star formation traced by near-UV (∼< 1 Gyr) and mid-IR (∼< 2 Gyr) excess is not negligible among nearby, quiescent, red, early-type galaxies. We suggest a possible evolutionary scenario of quiescent red-sequence galaxies from quiescent red-sequence galaxies with near-UV excess to those with mid-IR excess to those without near-UV and mid-IR excess.

Monolithic integration of microfluidic channels and semiconductor lasers

Science.gov (United States)

Cran-McGreehin, Simon J.; Dholakia, Kishan; Krauss, Thomas F.

2006-08-01

We present a fabrication method for the monolithic integration of microfluidic channels into semiconductor laser material. Lasers are designed to couple directly into the microfluidic channel, allowing submerged particles pass through the output beams of the lasers. The interaction between particles in the channel and the lasers, operated in either forward or reverse bias, allows for particle detection, and the optical forces can be used to trap and move particles. Both interrogation and manipulation are made more amenable for lab-on-a-chip applications through monolithic integration. The devices are very small, they require no external optical components, have perfect intrinsic alignment, and can be created with virtually any planar configuration of lasers in order to perform a variety of tasks. Their operation requires no optical expertise and only low electrical power, thus making them suitable for computer interfacing and automation. Insulating the pn junctions from the fluid is the key challenge, which is overcome by using photo-definable SU8-2000 polymer.

Infrared laser diagnostics for ITER

International Nuclear Information System (INIS)

Hutchinson, D.P.; Richards, R.K.; Ma, C.H.

1995-01-01

Two infrared laser-based diagnostics are under development at ORNL for measurements on burning plasmas such as ITER. The primary effort is the development of a CO 2 laser Thomson scattering diagnostic for the measurement of the velocity distribution of confined fusion-product alpha particles. Key components of the system include a high-power, single-mode CO 2 pulsed laser, an efficient optics system for beam transport and a multichannel low-noise infrared heterodyne receiver. A successful proof-of-principle experiment has been performed on the Advanced Toroidal Facility (ATF) stellerator at ORNL utilizing scattering from electron plasma frequency satellites. The diagnostic system is currently being installed on Alcator C-Mod at MIT for measurements of the fast ion tail produced by ICRH heating. A second diagnostic under development at ORNL is an infrared polarimeter for Faraday rotation measurements in future fusion experiments. A preliminary feasibility study of a CO 2 laser tangential viewing polarimeter for measuring electron density profiles in ITER has been completed. For ITER plasma parameters and a polarimeter wavelength of 10.6 microm, a Faraday rotation of up to 26 degree is predicted. An electro-optic polarization modulation technique has been developed at ORNL. Laboratory tests of this polarimeter demonstrated a sensitivity of ≤ 0.01 degree. Because of the similarity in the expected Faraday rotation in ITER and Alcator C-Mod, a collaboration between ORNL and the MIT Plasma Fusion Center has been undertaken to test this polarimeter system on Alcator C-Mod. A 10.6 microm polarimeter for this measurement has been constructed and integrated into the existing C-Mod multichannel two-color interferometer. With present experimental parameters for C-Mod, the predicted Faraday rotation was on the order of 0.1 degree. Significant output signals were observed during preliminary tests. Further experiment and detailed analyses are under way

Dynamics of laterally coupled semiconductor lasers: transition to chaos

NARCIS (Netherlands)

Yousefi, M.; Barsella, A.; Lenstra, D.; Lenstra, D.; Morthier, G.; Erneux, T.; Pessa, M.

2004-01-01

A method for the investigation of the dynamics of two semiconductor lasers, grown side-by-side on the same wafer to enhance the lateral optical coupling, is presented. Using steady state analysis, parameter regimes of relevant dynamics are identified. This is completed by a spectral analysis, were

A proposal for Coulomb assisted laser cooling of piezoelectric semiconductors

Energy Technology Data Exchange (ETDEWEB)

Nia, Iman Hassani; Mohseni, Hooman, E-mail: hmohseni@ece.northwestern.edu [Bio-Inspired Sensors and Optoelectronics Laboratory (BISOL), Department of Electrical Engineering, Northwestern University, Evanston, Illinois 60208 (United States)

2014-07-28

Anti-Stokes laser cooling of semiconductors as a compact and vibration-free method is very attractive. While it has achieved significant milestones, increasing its efficiency is highly desirable. The main limitation is the lack of the pristine material quality with high luminescence efficiency. Here, we theoretically demonstrate that the Coulomb interaction among electrons and holes in piezoelectric heterostructures could lead to coherent damping of acoustic phonons; rendering a significantly higher efficiency that leads to the possibility of cooling a broad range of semiconductors.

Semiconductor ring lasers coupled by a single waveguide

Science.gov (United States)

Coomans, W.; Gelens, L.; Van der Sande, G.; Mezosi, G.; Sorel, M.; Danckaert, J.; Verschaffelt, G.

2012-06-01

We experimentally and theoretically study the characteristics of semiconductor ring lasers bidirectionally coupled by a single bus waveguide. This configuration has, e.g., been suggested for use as an optical memory and as an optical neural network motif. The main results are that the coupling can destabilize the state in which both rings lase in the same direction, and it brings to life a state with equal powers at both outputs. These are both undesirable for optical memory operation. Although the coupling between the rings is bidirectional, the destabilization occurs due to behavior similar to an optically injected laser system.

Field-glass range finder with a semiconductor laser

Science.gov (United States)

Iwanejko, Leszek; Jankiewicz, Zdzislaw; Jarocki, Roman; Marczak, Jan

1995-03-01

This paper presents the project of a laboratory model of a field-glasses range-finger. The optical transmitter of the device contains a commercial pulse semiconductor laser which generates IR wavelength around 905 nm. Some of the technical parameters of this device are: a maximum range of up to 3 km; an accuracy of +/- 5 m, divergence of a laser beam of 1 mrad; a repetition rate of 1 kHz. Dichroic elements of the receiver ensure a capability of an optimization of a field of view, without the worsening of luminance and size of an observation field.

Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

OpenAIRE

Robert Kucharski; Łukasz Janicki; Marcin Zajac; Monika Welna; Marcin Motyka; Czesław Skierbiszewski; Robert Kudrawiec

2017-01-01

GaN substrates grown by the ammonothermal method are analyzed by Fast Fourier Transformation Spectroscopy in order to study the impact of doping (both n- and p-type) on their transparency in the near-infrared, mid-infrared, and terahertz spectral range. It is shown that the introduction of dopants causes a decrease in transparency of GaN substrates in a broad spectral range which is attributed to absorption on free carriers (n-type samples) or dopant ionization (p-type samples). In the mid-in...

FY 2006 Infrared Photonics Final Report

Energy Technology Data Exchange (ETDEWEB)

Anheier, Norman C.; Allen, Paul J.; Bernacki, Bruce E.; Ho, Nicolas; Krishnaswami, Kannan; Qiao, Hong (Amy); Schultz, John F.

2006-12-28

Research done by the Infrared Photonics team at Pacific Northwest National Laboratory (PNNL) is focused on developing miniaturized integrated optics and optical fiber processing methods for mid-wave infrared (MWIR) and long-wave infrared (LWIR) sensing applications by exploiting the unique optical and material properties of chalcogenide glass. PNNL has developed thin-film deposition capabilities, direct laser writing techniques, infrared photonic device demonstration, holographic optical element design and fabrication, photonic device modeling, and advanced optical metrology—all specific to chalcogenide glass. Chalcogenide infrared photonics provides a pathway to quantum cascade laser (QCL) transmitter miniaturization. The high output power, small size, and superb stability and modulation characteristics of QCLs make them amenable for integration as transmitters into ultra-sensitive, ultra-selective point sampling and remote short-range chemical sensors that are particularly useful for nuclear nonproliferation missions.

Applications of quantum cascade lasers in plasma diagnostics: a review

International Nuclear Information System (INIS)

Röpcke, J; Lang, N; Davies, P B; Rousseau, A; Welzel, S

2012-01-01

Over the past few years mid-infrared absorption spectroscopy based on quantum cascade lasers operating over the region from 3 to 12 µm and called quantum cascade laser absorption spectroscopy or QCLAS has progressed considerably as a powerful diagnostic technique for in situ studies of the fundamental physics and chemistry of molecular plasmas. The increasing interest in processing plasmas containing hydrocarbons, fluorocarbons, nitrogen oxides and organo-silicon compounds has led to further applications of QCLAS because most of these compounds and their decomposition products are infrared active. QCLAS provides a means of determining the absolute concentrations of the ground states of stable and transient molecular species at time resolutions below a microsecond, which is of particular importance for the investigation of reaction kinetics and dynamics. Information about gas temperature and population densities can also be derived from QCLAS measurements. Since plasmas with molecular feed gases are used in many applications such as thin film deposition, semiconductor processing, surface activation and cleaning, and materials and waste treatment, this has stimulated the adaptation of QCLAS techniques to industrial requirements including the development of new diagnostic equipment. The recent availability of external cavity (EC) QCLs offers a further new option for multi-component detection. The aim of this paper is fourfold: (i) to briefly review spectroscopic issues arising from applying pulsed QCLs, (ii) to report on recent achievements in our understanding of molecular phenomena in plasmas and at surfaces, (iii) to describe the current status of industrial process monitoring in the mid-infrared and (iv) to discuss the potential of advanced instrumentation based on EC-QCLs for plasma diagnostics. (topical review)

A Multiwavelength Study of Cygnus X-1: The First Mid-Infrared Spectroscopic Detection of Compact Jets

Science.gov (United States)

Rahoui, Farid; Lee, Julia C.; Heinz, Sebastian; Hines, Dean C.; Pottschmidt, Katja; Wilms, Joern

2011-01-01

We report on a Spitzer/IRS (mid-infrared), RXTE /PCA+HEXTE (X-ray), and Ryle (radio) simultaneous multi-wavelength study of the micro quasar Cygnus X-I, which aimed at an investigation of the origin of its mid-infrared emission. Compact jets were present in two out of three observations, and we show that they strongly contribute to the mid-infrared continuum. During the first observation, we detect the spectral break - where the transition from the optically thick to the optically thin regime takes place - at about 2.9 x 10(exp 13) Hz. We then show that the jet's optically thin synchrotron emission accounts for the Cygnus X-1's emission beyond 400 keY, although it cannot alone explain its 3-200 keV continuum. A compact jet was also present during the second observation, but we do not detect the break, since it has likely shifted to higher frequencies. In contrast, the compact jet was absent during the last observation, and we show that the 5-30 micron mid-infrared continuum of Cygnus X-I stems from the blue supergiant companion star HD 226868. Indeed, the emission can then be understood as the combination of the photospheric Raleigh-Jeans tail and the bremsstrahlung from the expanding stellar wind. Moreover, the stellar wind is found to be clumpy, with a filling factor f(sub infinity) approx.= 0.09-0.10. Its bremsstrahlung emission is likely anti-correlated to the soft X-ray emission, suggesting an anticorrelation between the mass-loss and mass-accretion rates. Nevertheless, we do not detect any mid-infrared spectroscopic evidence of interaction between the jets and the Cygnus X-1's environment and/or companion star's stellar wind.

Quantification of SOC and Clay Content Using Visible Near-Infrared Reflectance–Mid-Infrared Reflectance Spectroscopy With Jack-Knifing Partial Least Squares Regression

DEFF Research Database (Denmark)

Peng, Yi; Knadel, Maria; Gislum, René

2014-01-01

A total of 125 soil samples were collected from a Danish field varying in soil texture from sandy to loamy. Visible near-infrared reflectance (Vis-NIR) and mid-infrared reflectance (MIR) spectroscopy combined with chemometric methods were used to predict soil organic carbon (SOC) and clay content...

Digitally tunable dual wavelength emission from semiconductor ring lasers with filtered optical feedback

International Nuclear Information System (INIS)

Khoder, Mulham; Verschaffelt, Guy; Nguimdo, Romain Modeste; Danckaert, Jan; Leijtens, Xaveer; Bolk, Jeroen

2013-01-01

We report on a novel integrated approach to obtain dual wavelength emission from a semiconductor laser based on on-chip filtered optical feedback. Using this approach, we show experiments and numerical simulations of dual wavelength emission of a semiconductor ring laser. The filtered optical feedback is realized on-chip by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifiers are placed in the feedback loop in order to control the feedback strength of each wavelength channel independently. By tuning the current injected into each of the amplifiers, we can effectively cancel the gain difference between the wavelength channels due to fabrication and material dichroism, thus resulting in stable dual wavelength emission. We also explore the accuracy needed in the operational parameters to maintain this dual wavelength emission. (letter)

Low-loss, robust fusion splicing of silica to chalcogenide fiber for integrated mid-infrared laser technology development.

Science.gov (United States)

Thapa, Rajesh; Gattass, Rafael R; Nguyen, Vinh; Chin, Geoff; Gibson, Dan; Kim, Woohong; Shaw, L Brandon; Sanghera, Jasbinder S

2015-11-01

We demonstrate a low-loss, repeatable, and robust splice between single-mode silica fiber and single-mode chalcogenide (CHG) fiber. These splices are particularly difficult to create because of the significant difference in the two fibers' glass transition temperatures (∼1000°C) as well as the large difference in the coefficients of thermal expansion between the fibers (∼20×10(-6)/°C). With 90% light coupled through the silica-CHG fiber splice, predominantly in the fundamental circular-symmetric mode, into the core of the CHG fiber and with 0.5 dB of splice loss measured around the wavelength of 2.5 μm, after correcting only for the Fresnel loss, the silica-CHG splice offers excellent beam quality and coupling efficiency. The tensile strength of the splice is greater than 12 kpsi, and the laser damage threshold is greater than 2 W (CW) and was limited by the available laser pump power. We also utilized this splicing technique to demonstrate 2 to 4.5 μm ultrabroadband supercontinuum generation in a monolithic all-fiber system comprising a CHG fiber and a high peak power 2 μm pulsed Raman-shifted thulium fiber laser. This is a major development toward compact form factor commercial applications of soft-glass mid-IR fibers.

Phase-locked, high power, mid-infrared quantum cascade laser arrays

Science.gov (United States)

Zhou, W.; Slivken, S.; Razeghi, M.

2018-04-01

We demonstrate phase-locked, high power quantum cascade laser arrays, which are combined using a monolithic, tree array multimode interferometer, with emission wavelengths around 4.8 μm. A maximum output power of 15 W was achieved from an eight-element laser array, which has only a slightly higher threshold current density and a similar slope efficiency compared to a Fabry-Perot laser of the same length. Calculated multimode interferometer splitting loss is on the order of 0.27 dB for the in-phase supermode. In-phase supermode operation with nearly ideal behavior is demonstrated over the working current range of the array.

Conductive Oxides Trench Structures as Hyperbolic Metamaterials in Mid-infrared Range

DEFF Research Database (Denmark)

Takayama, Osamu; Shkondin, Evgeniy; Panah, Mohammad Esmail Aryaee

,2]. Moreover plasmonics for mid-infrared offer unique applications such as bio-sensing, thermal imaging and quest for novel materials and structures has been continuing [3]. In this report we show that vertical trench structures made of, for example, aluminum-doped ZnO (AZO) or other transparent conductive...

Diffuse-reflectance fourier-transform mid-infrared spectroscopy as a method of characterizing changes in soil organic matter

Science.gov (United States)

Diffuse-Reflectance Fourier-Transform Mid-Infrared Spectroscopy (MidIR) can identify the presence of important organic functional groups in soil organic matter (SOM). Soils contain myriad organic and inorganic components that absorb in the MidIR so spectral interpretation needs to be validated in or...

Chaos-pass filtering in injection-locked semiconductor lasers

International Nuclear Information System (INIS)

Murakami, Atsushi; Shore, K. Alan

2005-01-01

Chaos-pass filtering (CPF) of semiconductor lasers has been studied theoretically. CPF is a phenomenon which occurs in laser chaos synchronization by injection locking and is a fundamental technique for the extraction of messages at the receiver laser in chaotic communications systems. We employ a simple theory based on driven damped oscillators to clarify the physical background of CPF. The receiver laser is optically driven by injection from the transmitter laser. We have numerically investigated the response characteristics of the receiver when it is driven by periodic (message) and chaotic (carrier) signals. It is thereby revealed that the response of the receiver laser in the two cases is quite different. For the periodic drive, the receiver exhibits a response depending on the signal frequency, while the chaotic drive provides a frequency-independent synchronous response to the receiver laser. We verify that the periodic and chaotic drives occur independently in the CPF response, and, consequently, CPF can be clearly understood in the difference of the two drives. Message extraction using CPF is also examined, and the validity of our theoretical explanation for the physical mechanism underlying CPF is thus verified

High intensity mid infra-red spectroscopy of intersubband transitions in semiconductor quantum wells

International Nuclear Information System (INIS)

Serapiglia, G.B.

2000-01-01

High intensity (10 8 Wcm -2 ) mid-infrared spectroscopy has been used to study the optical response of intersubband transitions in InGaAs/InAlAs quantum wells with three conduction subbands. Steady state optical pumping of 2 x 10 11 cm -2 electrons into the excited vertical bar2> subband and subsequent electron relaxation (via phonon emission) back to the ground vertical bar1> subband creates a non-equilibrium phonon population (phonon occupancy∼1 at T=30K). Phonon re-absorption leads to a non-thermal electron distribution where electron-phonon scattering rates ∼200-500fs -1 are much faster than electron-electron scattering. In this regime, the intersubband absorption is inhomogeneously broadened. For substantially weaker optical pumping (∼1 saturation intensity) however, the electron distribution is able to thermalise and the absorption is homogeneously broadened. The phenomenon of electromagnetically-induced quantum coherence is demonstrated between 3 confined electron subband levels in a quantum well which are almost equally spaced in energy. Applying a strong coupling field, two-photon-resonant with the 1-3 intersubband transition, produces a pronounced narrow transparency feature in the 1-2 absorption line. This result can be understood in terms of all 3 states being simultaneously driven into ''phase-locked'' quantum coherence by a single coupling field. We describe the effect theoretically with a density matrix method and an adapted linear response theory. Efficient (∼1%) second harmonic generation, resonantly enhanced near λ=8.6μm, has been observed in asymmetric double multi-quantum well (ADQW) structures. Both waveguide mode and 45 deg. wedge multi-bounce geometries were used. The phase matching in the waveguide mode was achieved by incorporating a separate multiple QW region which modifies (via Kramers-Kronig relation) the dispersion of light. In the case of the 45 deg. wedge geometry, the phases of second harmonic waves generated at sequential

Study on the mechanism of human blood glucose concentration measuring using mid-infrared spectral analysis technology

Science.gov (United States)

Li, Xiang

2016-10-01

All forms of diabetes increase the risk of long-term complications. Blood glucose monitoring is of great importance for controlling diabetes procedure, preventing the complications and improving the patient's life quality. At present, the clinical blood glucose concentration measurement is invasive and could be replaced by noninvasive spectroscopy analytical techniques. The mid-infrared spectral region contains strong characteristic and well-defined absorption bands. Therefore, mid-infrared provides an opportunity for monitoring blood glucose invasively with only a few discrete bonds. Although the blood glucose concentration measurement using mid-infrared spectroscopy has a lot of advantages, the disadvantage is also obvious. The absorption in this infrared region is fundamental molecular group vibration. Absorption intensity is very strong, especially for biological molecules. In this paper, it figures out that the osmosis rate of glucose has a certain relationship with the blood glucose concentration. Therefore, blood glucose concentration could be measured indirectly by measuring the glucose exudate in epidermis layer. Human oral glucose tolerance tests were carried out to verify the correlation of glucose exudation in shallow layer of epidermis layer and blood glucose concentration. As it has been explained above, the mid-infrared spectral region contains well-defined absorption bands, the intensity of absorption peak around 1123 cm-1 was selected to measure the glucose and that around 1170 cm-1 was selected as reference. Ratio of absorption peak intensity was recorded for each set of measurement. The effect and importance of the cleaning the finger to be measured before spectrum measuring are discussed and also verified by experiment.

Mid-infrared plasmonic resonances exploiting heavily-doped Ge on Si

Science.gov (United States)

Biagioni, P.; Sakat, E.; Baldassarre, L.; Calandrini, E.; Samarelli, A.; Gallacher, K.; Frigerio, J.; Isella, G.; Paul, D. J.; Ortolani, M.

2015-03-01

We address the behavior of mid-infrared localized plasmon resonances in elongated germanium antennas integrated on silicon substrates. Calculations based on Mie theory and on the experimentally retrieved dielectric constant allow us to study the tunability and the figures of merit of plasmon resonances in heavily-doped germanium and to preliminarily compare them with those of the most established plasmonic material, gold.

Diatomic infrared gas-dynamic laser

International Nuclear Information System (INIS)

Mckenzie, R.L.

1971-01-01

A laser is provided which utilizes the infrared vibration rotation transitions of a diatomic gas such as carbon monoxide. The laser action is produced by an active diatomic gas such as carbon monoxide mixed with a vibrationally resonant pumping gas such as nitrogen. In addition, a noble gas such as argon may be employed as a third gas in the mixture. The gas mixture contains from 1 to 80 vol percent of the active gas based on the pumping gas, and the third gas, if used, can constitute up to 90 percent of the total gas volume. A number of significantly different wavelengths can be produced by the laser. A single laser may contain several optical resonators at different locations, so that the desired wave length can be selected at will

High Power Mid-Infrared Generation with a Quasi-Phase Matched GaAs Guided-wave Optical Parametric Oscillator

National Research Council Canada - National Science Library

Harris, J

2000-01-01

...-power coherent mid-infrared sources. Considerable effort has been devoted over the past decade to the development of mid-IR coherent sources based on nonlinear optical frequency conversion, e.g...

The structural and optical constants of Ag2S semiconductor nanostructure in the Far-Infrared.

Science.gov (United States)

Zamiri, Reza; Abbastabar Ahangar, Hossein; Zakaria, Azmi; Zamiri, Golnoosh; Shabani, Mehdi; Singh, Budhendra; Ferreira, J M F

2015-01-01

In this paper a template-free precipitation method was used as an easy and low cost way to synthesize Ag2S semiconductor nanoparticles. The Kramers-Kronig method (K-K) and classical dispersion theory was applied to calculate the optical constants of the prepared samples, such as the reflective index n(ω) and dielectric constant ε(ω) in Far-infrared regime. Nanocrystalline Ag2S was synthesized by a wet chemical precipitation method. Ag2S nanoparticle was characterized by X-ray diffraction, Scanning Electron Microscopy, UV-visible, and FT-IR spectrometry. The refinement of the monoclinic β-Ag2S phase yielded a structure solution similar to the structure reported by Sadanaga and Sueno. The band gap of Ag2S nanoparticles is around 0.96 eV, which is in good agreement with previous reports for the band gap energy of Ag2S nanoparticles (0.9-1.1 eV). The crystallite size of the synthesized particles was obtained by Hall-Williamson plot for the synthesized Ag2S nanoparticles and it was found to be 217 nm. The Far-infrared optical constants of the prepared Ag2S semiconductor nanoparticles were evaluated by means of FTIR transmittance spectra data and K-K method. Graphical abstractThe Far-infrared optical constants of Ag2S semiconductor nanoparticles.

FY1995 ultra-high performance semiconductor lasers for advanced optical information network; 1995 nendo kodo hikari joho tsushinmo e muketa kyokugen seino handotai laser

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-03-01

The purpose of this research was to study and develop ultra-high performance semiconductor light source devices that should facilitate construction of advanced optical information networks. The semiconductor devices mentioned above are enhanced and integrated versions of distributed feedback (DFB) lasers based on 'gain coupling', which the group of the research coordinator has been investigating as a pioneer in the world. This research aimed at development of ultra-high performance semiconductor lasers that surpass the first generation conventional DFB lasers in any respect, by strengthening important device characteristics for system applications of the gain-coupled DFB lasers. The achievements of this research are listed below : 1. In-situ characterization of As-P exchange in MOVPE 2. Development of 1.55 {mu}m gain-coupled DFB lasers of absorptive grating type 3. Establishment of measurement technique for gain-coupling coefficients 4. Enlargement of small signal modulation response by the absorptive grating 5. Prediction of lower analog modulation distortion 6. Characterization of reflection-induced noise 7. Proposal and Demonstration of wavelength trimming 8. Proposal and Fabrication of GC DFB laser triode (NEDO)

Deep-red semiconductor monolithic mode-locked lasers

International Nuclear Information System (INIS)

Kong, L.; Bajek, D.; White, S. E.; Forrest, A. F.; Cataluna, M. A.; Wang, H. L.; Pan, J. Q.; Wang, X. L.; Cui, B. F.; Ding, Y.

2014-01-01

A deep-red semiconductor monolithic mode-locked laser is demonstrated. Multi-section laser diodes based on an AlGaAs multi-quantum-well structure were passively mode-locked, enabling the generation of picosecond optical pulses at 752 nm, at pulse repetition rates of 19.37 GHz. An investigation of the dependence of the pulse duration as a function of reverse bias revealed a predominantly exponential decay trend of the pulse duration, varying from 10.5 ps down to 3.5 ps, which can be associated with the concomitant reduction of absorption recovery time with increasing applied field. A 30-MHz-tunability of the pulse repetition rate with bias conditions is also reported. The demonstration of such a compact, efficient and versatile ultrafast laser in this spectral region paves the way for its deployment in a wide range of applications such as biomedical microscopy, pulsed terahertz generation as well as microwave and millimeter-wave generation, with further impact on sensing, imaging and optical communications

Micromachining of semiconductor by femtosecond laser for integrated circuit defect analysis

Energy Technology Data Exchange (ETDEWEB)

Halbwax, M. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France); Sarnet, T. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France)], E-mail: sarnet@lp3.univ-mrs.fr; Hermann, J.; Delaporte, Ph.; Sentis, M. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France); Fares, L.; Haller, G. [STMicroelectronics, 190 Avenue Celestin Coq, ZI, 13106 Rousset Cedex (France)

2007-12-15

The latest International Technology Roadmap for Semiconductors (ITRS) has highlighted the detection and analysis of defects in Integrated Circuits (IC) as a major challenge faced by the semiconductor industry. Advanced tools used today for defect cross sectioning include dual beams (focused ion- and electron-beam technologies) with resolution down to the sub-Angstrom level. However ion milling an IC with a FIB is time consuming because of the need to open wide cavities in front of the cross-sections that need to be analyzed. Therefore the use of a femtosecond laser as a tool for direct material removal is discussed in this paper. Experiments were performed on IC structures to reveal the different layers of fabrication: selective or total ablation can occur depending on the laser energy density, without delamination of the layers. Different laser irradiation conditions like pressure (air, vacuum), polarization, beam shaping, and scanning parameters have been used to produce different types of cavities. The femtosecond laser engraving of silicon-based structures could be useful for cross-sectioning devices but also for other applications like direct-write lithography, photomask repair, maskless implantation or reverse engineering/restructuring.

Micromachining of semiconductor by femtosecond laser for integrated circuit defect analysis

International Nuclear Information System (INIS)

Halbwax, M.; Sarnet, T.; Hermann, J.; Delaporte, Ph.; Sentis, M.; Fares, L.; Haller, G.

2007-01-01

The latest International Technology Roadmap for Semiconductors (ITRS) has highlighted the detection and analysis of defects in Integrated Circuits (IC) as a major challenge faced by the semiconductor industry. Advanced tools used today for defect cross sectioning include dual beams (focused ion- and electron-beam technologies) with resolution down to the sub-Angstrom level. However ion milling an IC with a FIB is time consuming because of the need to open wide cavities in front of the cross-sections that need to be analyzed. Therefore the use of a femtosecond laser as a tool for direct material removal is discussed in this paper. Experiments were performed on IC structures to reveal the different layers of fabrication: selective or total ablation can occur depending on the laser energy density, without delamination of the layers. Different laser irradiation conditions like pressure (air, vacuum), polarization, beam shaping, and scanning parameters have been used to produce different types of cavities. The femtosecond laser engraving of silicon-based structures could be useful for cross-sectioning devices but also for other applications like direct-write lithography, photomask repair, maskless implantation or reverse engineering/restructuring

High-order diffraction gratings for high-power semiconductor lasers

International Nuclear Information System (INIS)

Vasil’eva, V. V.; Vinokurov, D. A.; Zolotarev, V. V.; Leshko, A. Yu.; Petrunov, A. N.; Pikhtin, N. A.; Rastegaeva, M. G.; Sokolova, Z. N.; Shashkin, I. S.; Tarasov, I. S.

2012-01-01

A deep diffraction grating with a large period (∼2 μm) within one of the cladding layers is proposed for the implementation of selective feedback in a semiconductor laser. Frequency dependences of reflectance in the 12th diffraction order for rectangular, triangular, and trapezoidal diffraction gratings are calculated. It is shown that the maximum reflectance of the waveguide mode is attained using a rectangular or trapezoidal grating ∼2 μm deep in the laser structure. Deep trapezoidal diffraction gratings with large periods are fabricated in the Al 0.3 Ga 0.7 As cladding layer of a GaAs/AlGaAs laser structure using photolithography and reactive ion etching.

Conversion from non-orthogonally to orthogonally polarized optical single-sideband modulation using optically injected semiconductor lasers.

Science.gov (United States)

Hung, Yu-Han; Tseng, Chin-Hao; Hwang, Sheng-Kwang

2018-06-01

This Letter investigates an optically injected semiconductor laser for conversion from non-orthogonally to orthogonally polarized optical single-sideband modulation. The underlying mechanism relies solely on nonlinear laser characteristics and, thus, only a typical semiconductor laser is required as the key conversion unit. This conversion can be achieved for a broadly tunable frequency range up to at least 65 GHz. After conversion, the microwave phase quality, including linewidth and phase noise, is mostly preserved, and simultaneous microwave amplification up to 23 dB is feasible.

Bio-analytical applications of mid-infrared spectroscopy using silver halide fiber-optic probes

International Nuclear Information System (INIS)

Heise, H.M.; Kuepper, L.; Butvina, L.N.

2002-01-01

Infrared-spectroscopy has proved to be a powerful method for the study of various biomedical samples, in particular for in-vitro analysis in the clinical laboratory and for non-invasive diagnostics. In general, the analysis of biofluids such as whole blood, urine, microdialysates and bioreactor broth media takes advantage of the fact that a multitude of analytes can be quantified simultaneously and rapidly without the need for reagents. Progress in the quality of infrared silver halide fibers enabled us to construct several flexible fiber-optic probes of different geometries, which are particularly suitable for the measurement of small biosamples. Recent trends show that dry film measurements by mid-infrared spectroscopy could revolutionize analytical tools in the clinical chemistry laboratory, and an example is given. Infrared diagnostic tools show a promising potential for patients, and minimal-invasive blood glucose assays or skin tissue pathology in particular cannot be left out using mid-infrared fiber-based probes. Other applications include the measurement of skin samples including penetration studies of vitamins and constituents of cosmetic cream formulations. A further field is the micro-domain analysis of biopsy samples from bog mummified corpses, and recent results on the chemistry of dermis and hair samples are reported. Another field of application, for which results are reported, is food analysis and bio-reactor monitoring

Fiber Based Mid Infrared Supercontinuum Source for Spectroscopic Analysis in Food Production

DEFF Research Database (Denmark)

Ramsay, Jacob; Dupont, Sune Vestergaard Lund; Keiding, Søren Rud

Optimization of sustainable food production is a worldwide challenge that is undergoing continuous development as new technologies emerge. Applying solutions for food analysis with novel bright and broad mid-infrared (MIR) light sources has the potential to meet the increasing demands for food...

A MID-INFRARED VIEW OF THE HIGH MASS STAR FORMATION REGION W51A

Energy Technology Data Exchange (ETDEWEB)

Barbosa, C. L. [Laboratório Nacional de Astrofísica, R. dos Estados Unidos, Bairro das Nações, CEP 37504-364, Itajubá—MG (Brazil); Blum, R. D. [National Optical Astronomy Observatory, Tucson, AZ 85719 (United States); Damineli, A. [Instituto de Astronomia, Geofísica e Ciências Atmosféricas, Universidade de São Paulo, R. do Matão, 1226, Cid. Universitária, São Paulo 05508-900 (Brazil); Conti, P. S. [JILA, University of Colorado, Boulder, CO 80309-0440 (United States); Gusmão, D. M., E-mail: cassio.barbosa@pq.cnpq.br, E-mail: rblum@noao.edu, E-mail: augusto.damineli@iag.usp.br, E-mail: pconti@jila.colorado.edu, E-mail: danilo@univap.br [IP and D—Universidade do Vale do Paraíba, Av. Shishima Hifumi, 2911. São José dos Campos, SP, 12244-000 (Brazil)

2016-07-01

In this paper we present the results of a mid-infrared study of G49.5-0.4, or W51A, part of the massive starbirth complex W51. Combining public data from the Spitzer IRAC camera, and Gemini mid-infrared camera T-ReCS at 7.73, 9.69, 12.33, and 24.56 μ m, with a spatial resolution of ∼0.″5, we have identified the mid-infrared counterparts of eight ultracompact H ii regions, showing that two radio sources are deeply embedded in molecular clouds and another is a cloud of ionized gas. From the T-ReCS data we have unveiled the central core of the W51 region, revealing massive young stellar candidates. We modeled the spectral energy distribution of the detected sources. The results suggest that the embedded objects are sources with spectral types ranging from B3 to O5, but the majority of the fits indicate stellar objects with B1 spectral types. We also present an extinction map of IRS 2, showing that a region with lower extinction corresponds to the region where a proposed jet of gas has impacted the foreground cloud. From this map, we also derived the total extinction toward the enigmatic source IRS 2E, which amounts to ∼60 mag in the V band. We calculated the color temperature due to thermal emission of the circumstellar dust of the detected sources; the temperatures are in the interval of ∼100–150 K, which corresponds to the emission of dust located at 0.1 pc from the central source. Finally, we show a possible mid-infrared counterpart of a detected source at millimeter wavelengths that was found by Zapata et al. to be a massive young stellar object undergoing a high accretion rate.

Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers

Science.gov (United States)

Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

2017-07-01

We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

Science.gov (United States)

Böhringer, Klaus; Hess, Ortwin

The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present

Transient Infrared Measurement of Laser Absorption Properties of Porous Materials

Directory of Open Access Journals (Sweden)

Marynowicz Andrzej

2016-06-01

Full Text Available The infrared thermography measurements of porous building materials have become more frequent in recent years. Many accompanying techniques for the thermal field generation have been developed, including one based on laser radiation. This work presents a simple optimization technique for estimation of the laser beam absorption for selected porous building materials, namely clinker brick and cement mortar. The transient temperature measurements were performed with the use of infrared camera during laser-induced heating-up of the samples’ surfaces. As the results, the absorbed fractions of the incident laser beam together with its shape parameter are reported.

Transient Infrared Measurement of Laser Absorption Properties of Porous Materials

Science.gov (United States)

Marynowicz, Andrzej

2016-06-01

The infrared thermography measurements of porous building materials have become more frequent in recent years. Many accompanying techniques for the thermal field generation have been developed, including one based on laser radiation. This work presents a simple optimization technique for estimation of the laser beam absorption for selected porous building materials, namely clinker brick and cement mortar. The transient temperature measurements were performed with the use of infrared camera during laser-induced heating-up of the samples' surfaces. As the results, the absorbed fractions of the incident laser beam together with its shape parameter are reported.

THE MID-INFRARED EVOLUTION OF THE FU ORIONIS DISK

Energy Technology Data Exchange (ETDEWEB)

Green, Joel D.; Jones, Olivia C.; Poteet, Charles A.; Sargent, Benjamin A. [Space Telescope Science Institute, Baltimore, MD 21218 (United States); Keller, Luke D. [Department of Physics and Astronomy, Ithaca College, Ithaca, NY (United States); Yang, Yao-Lun; Evans II, Neal J. [Department of Astronomy, The University of Texas at Austin, Austin, TX 78712 (United States); Fischer, William J. [Goddard Space Flight Center, Greenbelt, MD 20771 (United States); Rebull, Luisa M. [IPAC, Pasadena, CA 91125 (United States)

2016-11-20

We present new SOFIA-FORCAST observations obtained in 2016 February of the archetypal outbursting low-mass young stellar object FU Orionis, and we compare the continuum, solid-state, and gas properties with mid-infrared data obtained at the same wavelengths in 2004 with Spitzer -IRS. In this study, we conduct the first mid-infrared spectroscopic comparison of an FUor over a long time period. Over a 12-year period, UBVR monitoring indicates that FU Orionis has continued its steady decrease in overall brightness by ∼14%. We find that this decrease in luminosity occurs only at wavelengths ≲20 μ m. In particular, the continuum shortward of the silicate emission complex at 10 μ m exhibits a ∼12% (∼3 σ ) drop in flux density but no apparent change in slope; both the Spitzer and SOFIA spectra are consistent with a 7200 K blackbody. Additionally, the detection of water absorption is consistent with the Spitzer spectrum. The silicate emission feature at 10 μ m continues to be consistent with unprocessed grains, unchanged over 12 years. We conclude that either the accretion rate in FU Orionis has decreased by ∼12–14% over this time baseline or the inner disk has cooled, but the accretion disk remains in a superheated state outside the innermost region.

Infrared laser scattering system for plasma diagnostics

Energy Technology Data Exchange (ETDEWEB)

Muraoka, K; Hiraki, N; Kawasaki, S [Kyushu Univ., Fukuoka (Japan). Research Inst. for Applied Mechanics

1975-05-01

The possibility of observing the collective scattering of infrared laser light from plasmas is discussed in terms of the laser power requirement, the necessary optical system and the detector performance, and is shown to be feasible with the present day techniques to get the ion temperature by means of a CO/sub 2/ laser on theta pinch plasmas. Based on this estimate, the construction of the TEA CO/sub 2/ laser and the preparations of the optical components have been started and some preliminary results of these are described.

Infrared laser scattering system for plasma diagnostics

International Nuclear Information System (INIS)

Muraoka, Katsunori; Hiraki, Naoji; Kawasaki, Shoji