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Sample records for microwave plasma-enhanced chemical

  1. Microwave plasma-enhanced chemical vapour deposition growth of carbon nanostructures

    Directory of Open Access Journals (Sweden)

    Shivan R. Singh

    2010-05-01

    Full Text Available The effect of various input parameters on the production of carbon nanostructures using a simple microwave plasma-enhanced chemical vapour deposition technique has been investigated. The technique utilises a conventional microwave oven as the microwave energy source. The developed apparatus is inexpensive and easy to install and is suitable for use as a carbon nanostructure source for potential laboratory-based research of the bulk properties of carbon nanostructures. A result of this investigation is the reproducibility of specific nanostructures with the variation of input parameters, such as carbon-containing precursor and support gas flow rate. It was shown that the yield and quality of the carbon products is directly controlled by input parameters. Transmission electron microscopy and scanning electron microscopy were used to analyse the carbon products; these were found to be amorphous, nanotubes and onion-like nanostructures.

  2. Carbon nanosheets by microwave plasma enhanced chemical vapor deposition in CH4-Ar system

    International Nuclear Information System (INIS)

    Wang Zhipeng; Shoji, Mao; Ogata, Hironori

    2011-01-01

    We employ a new gas mixture of CH 4 -Ar to fabricate carbon nanosheets by microwave plasma enhanced chemical vapor deposition at the growth temperature of less than 500 deg. C. The catalyst-free nanosheets possess flower-like structures with a large amount of sharp edges, which consist of a few layers of graphene sheets according to the observation by transmission electron microscopy. These high-quality carbon nanosheets demonstrated a faster electron transfer between the electrolyte and the nanosheet surface, due to their edge defects and graphene structures.

  3. One-step microwave plasma enhanced chemical vapor deposition (MW-PECVD) for transparent superhydrophobic surface

    Science.gov (United States)

    Thongrom, Sukrit; Tirawanichakul, Yutthana; Munsit, Nantakan; Deangngam, Chalongrat

    2018-02-01

    We demonstrate a rapid and environmental friendly fabrication technique to produce optically clear superhydrophobic surfaces using poly (dimethylsiloxane) (PDMS) as a sole coating material. The inert PDMS chain is transformed into a 3-D irregular solid network through microwave plasma enhanced chemical vapor deposition (MW-PECVD) process. Thanks to high electron density in the microwave-activated plasma, coating can be done in just a single step with rapid deposition rate, typically much shorter than 10 s. Deposited layers show excellent superhydrophobic properties with water contact angles of ∼170° and roll-off angles as small as ∼3°. The plasma-deposited films can be ultrathin with thicknesses under 400 nm, greatly diminishing the optical loss. Moreover, with appropriate coating conditions, the coating layer can even enhance the transmission over the entire visible spectrum due to a partial anti-reflection effect.

  4. Structured nanocarbon on various metal foils by microwave plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Rius, G; Yoshimura, M

    2013-01-01

    We present a versatile process for the engineering of nanostructures made of crystalline carbon on metal foils. The single step process by microwave plasma-enhance chemical vapor deposition is demonstrated for various substrate materials, such as Ni or Cu. Either carbon nanotubes (CNT) or carbon nanowalls (CNW) are obtained under same growth conditions and without the need of additional catalyst. The use of spacer and insulator implies a certain control over the kind of allotropes that are obtained. High density and large surface area are morphological characteristics of the thus obtained C products. The possibility of application on many metals, and in the alloy composition, on as-delivered commercially available foils indicates that this strategy can be adapted to a bunch of specific applications, while the production of C nanostructures is of remarkable simplicity.

  5. Preparation of carbon nanotubes with different morphology by microwave plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Duraia, El-Shazly M. [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, 71 Al-Farabi av., 050038 Almaty (Kazakhstan); Institute of Physics and Technology, Ibragimov Street 11, 050032 Almaty (Kazakhstan); Mansurov, Zulkhair [Al-Farabi Kazakh National University, 71 Al-Farabi av., 050038 Almaty (Kazakhstan); Tokmoldin, S.Zh. [Institute of Physics and Technology, Ibragimov Street 11, 050032 Almaty (Kazakhstan)

    2010-04-15

    In this work we present a part of our results about the preparation of carbon nanotube with different morphologies by using microwave plasma enhanced chemical vapour deposition MPECVD. Well aligned, curly, carbon nanosheets, coiled carbon sheets and carbon microcoils have been prepared. We have investigated the effect of the different growth condition parameters such as the growth temperature, pressure and the hydrogen to methane flow rate ratio on the morphology of the carbon nanotubes. The results showed that there is a great dependence of the morphology of carbon nanotubes on these parameters. The yield of the carbon microcoils was high when the growth temperature was 700 C. There is a linear relation between the growth rate and the methane to hydrogen ratio. The effect of the gas pressure on the CNTs was also studied. Our samples were investigated by scanning electron microscope and Raman spectroscopy (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Coating of diamond-like carbon nanofilm on alumina by microwave plasma enhanced chemical vapor deposition process.

    Science.gov (United States)

    Rattanasatien, Chotiwan; Tonanon, Nattaporn; Bhanthumnavin, Worawan; Paosawatyanyong, Boonchoat

    2012-01-01

    Diamond-like carbon (DLC) nanofilms with thickness varied from under one hundred to a few hundred nanometers have been successfully deposited on alumina substrates by microwave plasma enhanced chemical vapor deposition (MW-PECVD) process. To obtain dense continuous DLC nanofilm coating over the entire sample surface, alumina substrates were pre-treated to enhance the nucleation density. Raman spectra of DLC films on samples showed distinct diamond peak at around 1332 cm(-1), and the broad band of amorphous carbon phase at around 1550 cm(-1). Full width at half maximum height (FWHM) values indicated good formation of diamond phase in all films. The result of nano-indentation test show that the hardness of alumina samples increase from 7.3 +/- 2.0 GPa in uncoated samples to 15.8 +/- 4.5-52.2 +/- 2.1 GPa in samples coated with DLC depending on the process conditions. It is observed that the hardness values are still in good range although the thickness of the films is less than a hundred nanometer.

  7. Hydrogen plasma enhanced alignment on CNT-STM tips grown by liquid catalyst-assisted microwave plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Tung, Fa-Kuei; Yoshimura, Masamichi; Ueda, Kazuyuki; Ohira, Yutaka; Tanji, Takayoshi

    2008-01-01

    Carbon nanotubes are grown directly on a scanning tunneling microscopy tip by liquid catalyst-assisted microwave-enhanced chemical vapor deposition, and effects of hydrogen plasma treatment on the tip have been investigated in detail by field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and Raman spectroscopy. The unaligned CNTs on the as-grown tip apex have been realigned and reshaped by subsequent hydrogen plasma treatment. The diameter of CNTs is enlarged mainly due to amorphous layers being re-sputtered over their outer shells

  8. Direct Fabrication of Carbon Nanotubes STM Tips by Liquid Catalyst-Assisted Microwave Plasma-Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Fa-Kuei Tung

    2009-01-01

    Full Text Available Direct and facile method to make carbon nanotube (CNT tips for scanning tunneling microscopy (STM is presented. Cobalt (Co particles, as catalysts, are electrochemically deposited on the apex of tungsten (W STM tip for CNT growth. It is found that the quantity of Co particles is well controlled by applied DC voltage, concentration of catalyst solution, and deposition time. Using optimum growth condition, CNTs are successfully synthesized on the tip apex by catalyst-assisted microwave-enhanced chemical vapor deposition (CA-MPECVD. A HOPG surface is clearly observed at an atomic scale using the present CNT-STM tip.

  9. Microwave plasma enhanced chemical vapor deposition growth of few-walled carbon nanotubes using catalyst derived from an iron-containing block copolymer precursor

    International Nuclear Information System (INIS)

    Wang Peng; Lu, Jennifer; Zhou, Otto

    2008-01-01

    The microwave plasma enhanced chemical vapor deposition (MPECVD) method is now commonly used for directional and conformal growth of carbon nanotubes (CNTs) on supporting substrates. One of the shortcomings of the current process is the lack of control of the diameter and diameter distribution of the CNTs due to difficulties in synthesizing well-dispersed catalysts. Recently, block copolymer derived catalysts have been developed which offer the potential of fine control of both the size of and the spacing between the metal clusters. In this paper we report the successful growth of CNTs with narrow diameter distribution using polystyrene-block-polyferrocenylethylmethylsilane (PS-b-PFEMS) as the catalyst precursor. The study shows that higher growth pressure leads to better CNT growth. Besides the pressure, the effects on the growth of CNTs of the growth parameters, such as temperature and precursor gas ratio, are also studied

  10. The study and the realization of radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique

    International Nuclear Information System (INIS)

    Jany, Ch.

    1998-01-01

    The aim of this work was to develop radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique. The influence of surface treatments, contact technology and diamond growth parameters on the diamond detectors characteristics was investigated in order to optimise the detector response to alpha particles. The first part of the study focused on the electrical behaviour of as-deposited diamond surface, showing a p type conduction and its influence on the leakage current of the device. A surface preparation process was established in order to reduce the leakage current of the device by surface dehydrogenation using an oxidising step. Several methods to form and treat electrical contacts were also investigated showing that the collection efficiency of the device decreases after contact annealing. In the second part, we reported the influence of the diamond deposition parameters on the characteristics of the detectors. The increase of the deposition temperature and/or methane concentration was shown to lead η to decrease. In contrast, η was found to increase with the micro-wave power. The evolution of the diamond detector characteristics results from the variation in sp 2 phases incorporation and in the crystallography quality of the films. These defects increase the leakage current and reduce the carrier mobility and lifetime. Measurements carried out on detectors with different thicknesses showed that the physical properties varies along the growth direction, improving with the film thickness. Finally, the addition of nitrogen (> 10 ppm) in the gas mixture during diamond deposition was found to strongly reduce the collection efficiency of the detectors. To conclude the study, we fabricated and characterised diamond devices which were used for thermal neutron detection and for the intensity and shape measurement of VUV and soft X-ray pulses. (author)

  11. A solid-state nuclear magnetic resonance study of post-plasma reactions in organosilicone microwave plasma-enhanced chemical vapor deposition (PECVD) coatings.

    Science.gov (United States)

    Hall, Colin J; Ponnusamy, Thirunavukkarasu; Murphy, Peter J; Lindberg, Mats; Antzutkin, Oleg N; Griesser, Hans J

    2014-06-11

    Plasma-polymerized organosilicone coatings can be used to impart abrasion resistance and barrier properties to plastic substrates such as polycarbonate. Coating rates suitable for industrial-scale deposition, up to 100 nm/s, can be achieved through the use of microwave plasma-enhanced chemical vapor deposition (PECVD), with optimal process vapors such as tetramethyldisiloxane (TMDSO) and oxygen. However, it has been found that under certain deposition conditions, such coatings are subject to post-plasma changes; crazing or cracking can occur anytime from days to months after deposition. To understand the cause of the crazing and its dependence on processing plasma parameters, the effects of post-plasma reactions on the chemical bonding structure of coatings deposited with varying TMDSO-to-O2 ratios was studied with (29)Si and (13)C solid-state magic angle spinning nuclear magnetic resonance (MAS NMR) using both single-pulse and cross-polarization techniques. The coatings showed complex chemical compositions significantly altered from the parent monomer. (29)Si MAS NMR spectra revealed four main groups of resonance lines, which correspond to four siloxane moieties (i.e., mono (M), di (D), tri (T), and quaternary (Q)) and how they are bound to oxygen. Quantitative measurements showed that the ratio of TMDSO to oxygen could shift the chemical structure of the coating from 39% to 55% in Q-type bonds and from 28% to 16% for D-type bonds. Post-plasma reactions were found to produce changes in relative intensities of (29)Si resonance lines. The NMR data were complemented by Fourier transform infrared (FTIR) spectroscopy. Together, these techniques have shown that the bonding environment of Si is drastically altered by varying the TMDSO-to-O2 ratio during PECVD, and that post-plasma reactions increase the cross-link density of the silicon-oxygen network. It appears that Si-H and Si-OH chemical groups are the most susceptible to post-plasma reactions. Coatings produced at a

  12. Effect of plasma composition on nanocrystalline diamond layers deposited by a microwave linear antenna plasma-enhanced chemical vapour deposition system

    Czech Academy of Sciences Publication Activity Database

    Taylor, Andrew; Ashcheulov, Petr; Čada, Martin; Fekete, Ladislav; Hubík, Pavel; Klimša, Ladislav; Olejníček, Jiří; Remeš, Zdeněk; Jirka, Ivan; Janíček, P.; Bedel-Pereira, E.; Kopeček, Jaromír; Mistrík, J.; Mortet, Vincent

    2015-01-01

    Roč. 212, č. 11 (2015), s. 2418-2423 ISSN 1862-6300 R&D Projects: GA ČR GA13-31783S; GA MŠk LO1409 Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568 Institutional support: RVO:68378271 ; RVO:61388955 Keywords : diamond * electrical conductivity * nanocrystalline materials * optical emission spectroscopy * plasma enhanced chemical vapour deposition * SiC Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.648, year: 2015

  13. Spectroscopic ellipsometry characterization of nano-crystalline diamondfilms prepared at various substrate temperatures and pulsed plasma frequencies using microwave plasma enhanced chemical vapor deposition apparatus with linear antenna delivery

    Czech Academy of Sciences Publication Activity Database

    Mistrík, J.; Janíček, P.; Taylor, Andrew; Fendrych, František; Fekete, Ladislav; Jäger, Aleš; Nesládek, M.

    2014-01-01

    Roč. 571, č. 1 (2014), s. 230-237 ISSN 0040-6090 R&D Projects: GA ČR GA13-31783S; GA MŠk(CZ) LM2011026 Grant - others: COST Nano TP(XE) MP0901; OP VK(XE) CZ.1.07/2.3.00/20.0306 Institutional support: RVO:68378271 Keywords : nanocrystalline diamond * thin films * microwave plasma-enhanced chemical vapor deposition * pulsed plasma * low deposition temperature Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.759, year: 2014

  14. Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Matthew T. Cole

    2013-05-01

    Full Text Available A plasma-enhanced chemical vapour deposition reactor has been developed to synthesis horizontally aligned carbon nanotubes. The width of the aligning sheath was modelled based on a collisionless, quasi-neutral, Child’s law ion sheath where these estimates were empirically validated by direct Langmuir probe measurements, thereby confirming the proposed reactors ability to extend the existing sheath fields by up to 7 mm. A 7 mbar growth atmosphere combined with a 25 W plasma permitted the concurrent growth and alignment of carbon nanotubes with electric fields of the order of 0.04 V μm−1 with linear packing densities of up to ~5 × 104 cm−1. These results open up the potential for multi-directional in situ alignment of carbon nanotubes providing one viable route to the fabrication of many novel optoelectronic devices.

  15. Room temperature synthesis of porous SiO2 thin films by plasma enhanced chemical vapor deposition

    OpenAIRE

    Barranco Quero, Ángel; Cotrino Bautista, José; Yubero Valencia, Francisco; Espinós, J. P.; Rodríguez González-Elipe, Agustín

    2004-01-01

    Synthesis of porous SiO2 thin films in room temperature was carried out using plasma enhanced chemical vapor deposition (CVD) in an electron cyclotron resonance microwave reactor with a downstream configuration.The gas adsorption properties and the type of porosity of the SiO2 thin films were assessed by adsorption isotherms of toluene at room temperature.The method could also permit the tailoring synthesis of thin films when both composition and porosity can be simultaneously and independent...

  16. Review: Plasma-enhanced chemical vapor deposition of nanocrystalline diamond

    Directory of Open Access Journals (Sweden)

    Katsuyuki Okada

    2007-01-01

    Full Text Available Nanocrystalline diamond films have attracted considerable attention because they have a low coefficient of friction and a low electron emission threshold voltage. In this paper, the author reviews the plasma-enhanced chemical vapor deposition (PE-CVD of nanocrystalline diamond and mainly focuses on the growth of nanocrystalline diamond by low-pressure PE-CVD. Nanocrystalline diamond particles of 200–700 nm diameter have been prepared in a 13.56 MHz low-pressure inductively coupled CH4/CO/H2 plasma. The bonding state of carbon atoms was investigated by ultraviolet-excited Raman spectroscopy. Electron energy loss spectroscopy identified sp2-bonded carbons around the 20–50 nm subgrains of nanocrystalline diamond particles. Plasma diagnostics using a Langmuir probe and the comparison with plasma simulation are also reviewed. The electron energy distribution functions are discussed by considering different inelastic interaction channels between electrons and heavy particles in a molecular CH4/H2 plasma.

  17. Tungsten Deposition on Graphite using Plasma Enhanced Chemical Vapour Deposition

    International Nuclear Information System (INIS)

    Sharma, Uttam; Chauhan, Sachin S; Sharma, Jayshree; Sanyasi, A K; Ghosh, J; Choudhary, K K; Ghosh, S K

    2016-01-01

    The tokamak concept is the frontrunner for achieving controlled thermonuclear reaction on earth, an environment friendly way to solve future energy crisis. Although much progress has been made in controlling the heated fusion plasmas (temperature ∼ 150 million degrees) in tokamaks, technological issues related to plasma wall interaction topic still need focused attention. In future, reactor grade tokamak operational scenarios, the reactor wall and target plates are expected to experience a heat load of 10 MW/m 2 and even more during the unfortunate events of ELM's and disruptions. Tungsten remains a suitable choice for the wall and target plates. It can withstand high temperatures, its ductile to brittle temperature is fairly low and it has low sputtering yield and low fuel retention capabilities. However, it is difficult to machine tungsten and hence usages of tungsten coated surfaces are mostly desirable. To produce tungsten coated graphite tiles for the above-mentioned purpose, a coating reactor has been designed, developed and made operational at the SVITS, Indore. Tungsten coating on graphite has been attempted and successfully carried out by using radio frequency induced plasma enhanced chemical vapour deposition (rf -PECVD) for the first time in India. Tungsten hexa-fluoride has been used as a pre-cursor gas. Energy Dispersive X-ray spectroscopy (EDS) clearly showed the presence of tungsten coating on the graphite samples. This paper presents the details of successful operation and achievement of tungsten coating in the reactor at SVITS. (paper)

  18. Polycrystalline AlN films with preferential orientation by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Sanchez, G.; Wu, A.; Tristant, P.; Tixier, C.; Soulestin, B.; Desmaison, J.; Bologna Alles, A.

    2008-01-01

    AlN thin films for acoustic wave devices were prepared by Microwave Plasma Enhanced Chemical Vapor Deposition under different process conditions, employing Si (100) and Pt (111)/SiO 2 /Si (100) substrates. The films were characterized by X-ray diffraction, Fourier transform infrared transmission spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. The values of the distance between the plasma and the tri-methyl-aluminum precursor injector, the radiofrequency bias potential, and the substrate temperature were central in the development of polycrystalline films. The choice of the chamber total pressure during deposition allowed for the development of two different crystallographic orientations, i.e., or . The film microstructures exhibited in general a column-like growth with rounded tops, an average grain size of about 40 nm, and a surface roughness lower than 20 nm under the best conditions

  19. Remote plasma-enhanced metalorganic chemical vapor deposition of aluminum oxide thin films

    NARCIS (Netherlands)

    Volintiru, I.; Creatore, M.; Hemmen, van J.L.; Sanden, van de M.C.M.

    2008-01-01

    Aluminum oxide films were deposited using remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/trimethylaluminum mixtures. Initial studies by in situ spectroscopic ellipsometry demonstrated that the aluminum oxide films deposited at temperatures

  20. Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber.

    Science.gov (United States)

    Dechana, A; Thamboon, P; Boonyawan, D

    2014-10-01

    A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al2O3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al2O3 films-analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques-will be discussed.

  1. Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

    Energy Technology Data Exchange (ETDEWEB)

    Dechana, A. [Program of Physics and General Science, Faculty of Science and Technology, Songkhla Rajabhat University, Songkhla 90000 (Thailand); Thamboon, P. [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Boonyawan, D., E-mail: dheerawan.b@cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2014-10-15

    A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al{sub 2}O{sub 3} layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al{sub 2}O{sub 3} films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.

  2. Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

    Science.gov (United States)

    Dechana, A.; Thamboon, P.; Boonyawan, D.

    2014-10-01

    A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al2O3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al2O3 films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.

  3. Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

    International Nuclear Information System (INIS)

    Dechana, A.; Thamboon, P.; Boonyawan, D.

    2014-01-01

    A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al 2 O 3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al 2 O 3 films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed

  4. Study on stability of a-SiCOF films deposited by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Ding Shijin; Zhang Qingquan; Wang Pengfei; Zhang Wei; Wang Jitao

    2001-01-01

    Low-dielectric-constant a-SiCOF films have been prepared from TEOS, C 4 F 8 and Ar by using plasma enhanced chemical vapor deposition method. With the aid of X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR), the chemical bonding configuration, thermal stability and resistance to water of the films are explored

  5. The study and the realization of radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique; Etude et realisation de detecteurs de rayonnements a base de films de diamant polycristallin elabores par depot chimique en phase vapeur assiste par plasma micro-onde

    Energy Technology Data Exchange (ETDEWEB)

    Jany, Ch

    1998-10-29

    The aim of this work was to develop radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique. The influence of surface treatments, contact technology and diamond growth parameters on the diamond detectors characteristics was investigated in order to optimise the detector response to alpha particles. The first part of the study focused on the electrical behaviour of as-deposited diamond surface, showing a p type conduction and its influence on the leakage current of the device. A surface preparation process was established in order to reduce the leakage current of the device by surface dehydrogenation using an oxidising step. Several methods to form and treat electrical contacts were also investigated showing that the collection efficiency of the device decreases after contact annealing. In the second part, we reported the influence of the diamond deposition parameters on the characteristics of the detectors. The increase of the deposition temperature and/or methane concentration was shown to lead {eta} to decrease. In contrast, {eta} was found to increase with the micro-wave power. The evolution of the diamond detector characteristics results from the variation in sp{sup 2} phases incorporation and in the crystallography quality of the films. These defects increase the leakage current and reduce the carrier mobility and lifetime. Measurements carried out on detectors with different thicknesses showed that the physical properties varies along the growth direction, improving with the film thickness. Finally, the addition of nitrogen (> 10 ppm) in the gas mixture during diamond deposition was found to strongly reduce the collection efficiency of the detectors. To conclude the study, we fabricated and characterised diamond devices which were used for thermal neutron detection and for the intensity and shape measurement of VUV and soft X-ray pulses. (author)

  6. Plasma-enhanced chemical vapor deposition of aluminum oxide using ultrashort precursor injection pulses

    NARCIS (Netherlands)

    Dingemans, G.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2012-01-01

    An alternative plasma-enhanced chemical vapor deposition (PECVD) method is developed and applied for the deposition of high-quality aluminum oxide (AlOx) films. The PECVD method combines a continuous plasma with ultrashort precursor injection pulses. We demonstrate that the modulation of the

  7. Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

    NARCIS (Netherlands)

    Worhoff, Kerstin; Driessen, A.; Lambeck, Paul; Hilderink, L.T.H.; Linders, Petrus W.C.; Popma, T.J.A.

    1999-01-01

    Silicon Oxynitride layers are grown from SiH4/N2, NH3 and N2O by Plasma Enhanced Chemical Vapor Deposition. The process is optimized with respect to deposition of layers with excellent uniformity in the layer thickness, high homogeneity of the refractive index and good reproducibility of the layer

  8. Oxygen Barrier Coating Deposited by Novel Plasma-enhanced Chemical Vapor Deposition

    DEFF Research Database (Denmark)

    Jiang, Juan; Benter, M.; Taboryski, Rafael Jozef

    2010-01-01

    We report the use of a novel plasma-enhanced chemical vapor deposition chamber with coaxial electrode geometry for the SiOx deposition. This novel plasma setup exploits the diffusion of electrons through the inner most electrode to the interior samples space as the major energy source. This confi......We report the use of a novel plasma-enhanced chemical vapor deposition chamber with coaxial electrode geometry for the SiOx deposition. This novel plasma setup exploits the diffusion of electrons through the inner most electrode to the interior samples space as the major energy source...... effect of single-layer coatings deposited under different reaction conditions was studied. The coating thickness and the carbon content in the coatings were found to be the critical parameters for the barrier property. The novel barrier coating was applied on different polymeric materials...

  9. Achieving uniform layer deposition by atmospheric-pressure plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jae-Ok [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Kang, Woo Seok, E-mail: kang@kimm.re.kr [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Department of Environment & Energy Mechanical Engineering, University of Science & Technology (UST), Daejeon 305-350 (Korea, Republic of); Hur, Min; Lee, Jin Young [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Song, Young-Hoon [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Department of Environment & Energy Mechanical Engineering, University of Science & Technology (UST), Daejeon 305-350 (Korea, Republic of)

    2015-12-31

    This work investigates the use of plasma-enhanced chemical vapor deposition under atmospheric pressure for achieving uniform layer formation. Electrical and optical measurements demonstrated that the counterbalance between oxygen and precursors maintained the homogeneous discharge mode, while creating intermediate species for layer deposition. Several steps of the deposition process of the layers, which were processed on a stationary stage, were affected by flow stream and precursor depletion. This study showed that by changing the flow streamlines using substrate stage motion uniform layer deposition under atmospheric pressure can be achieved. - Highlights: • Zirconium oxide was deposited by atmospheric-pressure plasma-enhanced chemical vapor deposition. • Homogeneous plasma was maintained by counterbalancing between discharge gas and precursors. • Several deposition steps were observed affected by the gas flow stream and precursor depletion. • Thin film layer was uniformly grown when the substrate underwent a sweeping motion.

  10. MICROWAVE TECHNOLOGY CHEMICAL SYNTHESIS APPLICATIONS

    Science.gov (United States)

    Microwave-accelerated chemical syntheses in various solvents as well as under solvent-free conditions have witnessed an explosive growth. The technique has found widespread application predominantly exploiting the inexpensive unmodified household microwave (MW) ovens although th...

  11. Growth of highly oriented carbon nanotubes by plasma-enhanced hot filament chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Z.P.; Xu, J.W.; Ren, Z.F.; Wang, J.H. [Materials Synthesis Laboratory, Departments of Physics and Chemistry, and Center for Advanced Photonic and Electronic Materials (CAPEM), State University of New York at Buffalo, Buffalo, New York 14260 (United States); Siegal, M.P.; Provencio, P.N. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States)

    1998-12-01

    Highly oriented, multiwalled carbon nanotubes were grown on polished polycrystalline and single crystal nickel substrates by plasma enhanced hot filament chemical vapor deposition at temperatures below 666 {degree}C. The carbon nanotubes range from 10 to 500 nm in diameter and 0.1 to 50 {mu}m in length depending on growth conditions. Acetylene is used as the carbon source for the growth of the carbon nanotubes and ammonia is used for dilution gas and catalysis. The plasma intensity, acetylene to ammonia gas ratio, and their flow rates, etc. affect the diameters and uniformity of the carbon nanotubes. {copyright} {ital 1998 American Institute of Physics.}

  12. Room-temperature plasma-enhanced chemical vapor deposition of SiOCH films using tetraethoxysilane

    International Nuclear Information System (INIS)

    Yamaoka, K.; Yoshizako, Y.; Kato, H.; Tsukiyama, D.; Terai, Y.; Fujiwara, Y.

    2006-01-01

    Carbon-doped silicon oxide (SiOCH) thin films were deposited by room-temperature plasma-enhanced chemical vapor deposition (PECVD) using tetraethoxysilane (TEOS). The deposition rate and composition of the films strongly depended on radio frequency (RF) power. The films deposited at low RF power contained more CH n groups. The SiOCH films showed high etch rate and low refractive index in proportion to the carbon composition. The deposition with low plasma density and low substrate temperature is effective for SiOCH growth by PECVD using TEOS

  13. Plasma-enhanced chemical vapor deposition for YBCO film fabrication of superconducting fault-current limiter

    Energy Technology Data Exchange (ETDEWEB)

    Jun, Byung Hyuk; Kim, Chan Joong

    2006-05-15

    Since the high-temperature superconductor of oxide type was founded, many researches and efforts have been performed for finding its application field. The YBCO superconducting film fabricated on economic metal substrate with uniform critical current density is considered as superconducting fault-current limiter (SFCL). There are physical and chemical processes to fabricate superconductor film, and it is understood that the chemical methods are more economic to deposit large area. Among them, chemical vapor deposition (CVD) is a promising deposition method in obtaining film uniformity. To solve the problems due to the high deposition temperature of thermal CVD, plasma-enhanced chemical vapor deposition (PECVD) is suggested. This report describes the principle and fabrication trend of SFCL, example of YBCO film deposition by PECVD method, and principle of plasma deposition.

  14. Synthesis of electro-active manganese oxide thin films by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Merritt, Anna R. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States); Rajagopalan, Ramakrishnan [Department of Engineering, The Pennsylvania State University, Dubois, PA 15801 (United States); Materials Research Institute, The Pennsylvania State University, University Park, PA 16802 (United States); Carter, Joshua D. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States)

    2014-04-01

    The good stability, cyclability and high specific capacitance of manganese oxide (MnO{sub x}) has recently promoted a growing interest in utilizing MnO{sub x} in asymmetric supercapacitor electrodes. Several literature reports have indicated that thin film geometries of MnO{sub x} provide specific capacitances that are much higher than bulk MnO{sub x} powders. Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique for the production of metal oxide thin films with high purity and controllable thickness. In this work, MnO{sub x} thin films deposited by PECVD from a methylcyclopentadienyl manganese tricarbonyl precursor are presented and the effect of processing conditions on the quality of MnO{sub x} films is described. The film purity and oxidation state of the MnO{sub x} films were studied by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Preliminary electrochemical testing of MnO{sub x} films deposited on carbon fiber electrodes in aqueous electrolytes indicates that the PECVD synthesized films are electrochemically active. - Highlights: • Plasma enhanced chemical vapor deposition of manganese oxide thin films. • Higher plasma power and chamber pressure increase deposition rate. • Manganese oxide thin films are electrochemically active. • Best electrochemical performance observed for pure film with low stress • Lower capacitance observed at higher scan rates despite thin film geometry.

  15. High Current Emission from Patterned Aligned Carbon Nanotubes Fabricated by Plasma-Enhanced Chemical Vapor Deposition

    Science.gov (United States)

    Cui, Linfan; Chen, Jiangtao; Yang, Bingjun; Jiao, Tifeng

    2015-12-01

    Vertically, carbon nanotube (CNT) arrays were successfully fabricated on hexagon patterned Si substrates through radio frequency plasma-enhanced chemical vapor deposition using gas mixtures of acetylene (C2H2) and hydrogen (H2) with Fe/Al2O3 catalysts. The CNTs were found to be graphitized with multi-walled structures. Different H2/C2H2 gas flow rate ratio was used to investigate the effect on CNT growth, and the field emission properties were optimized. The CNT emitters exhibited excellent field emission performance (the turn-on and threshold fields were 2.1 and 2.4 V/μm, respectively). The largest emission current could reach 70 mA/cm2. The emission current was stable, and no obvious deterioration was observed during the long-term stability test of 50 h. The results were relevant for practical applications based on CNTs.

  16. Stress hysteresis and mechanical properties of plasma-enhanced chemical vapor deposited dielectric films

    Science.gov (United States)

    Thurn, Jeremy; Cook, Robert F.; Kamarajugadda, Mallika; Bozeman, Steven P.; Stearns, Laura C.

    2004-02-01

    A comprehensive survey is described of the responses of three plasma-enhanced chemical vapor deposited dielectric film systems to thermal cycling and indentation contact. All three films—silicon oxide, silicon nitride, and silicon oxy-nitride—exhibited significant nonequilibrium permanent changes in film stress on thermal cycling or annealing. The linear relationship between stress and temperature changed after the films were annealed at 300 °C, representing a structural alteration in the film reflecting a change in coefficient of thermal expansion or biaxial modulus. A double-substrate method was used to deduce both thermoelastic properties before and after the anneal of selected films and the results were compared with the modulus deconvoluted from small-scale depth-sensing indentation experiments (nanoindentation). Rutherford backscattering spectrometry and hydrogen forward scattering were used to deduce the composition of the films and it was found that all the films contained significant amounts of hydrogen.

  17. Stress hysteresis during thermal cycling of plasma-enhanced chemical vapor deposited silicon oxide films

    Science.gov (United States)

    Thurn, Jeremy; Cook, Robert F.

    2002-02-01

    The mechanical response of plasma-enhanced chemical vapor deposited SiO2 to thermal cycling is examined by substrate curvature measurement and depth-sensing indentation. Film properties of deposition stress and stress hysteresis that accompanied thermal cycling are elucidated, as well as modulus, hardness, and coefficient of thermal expansion. Thermal cycling is shown to result in major plastic deformation of the film and a switch from a compressive to a tensile state of stress; both athermal and thermal components of the net stress alter in different ways during cycling. A mechanism of hydrogen incorporation and release from as-deposited silanol groups is proposed that accounts for the change in film properties and state of stress.

  18. Two dimensional radial gas flows in atmospheric pressure plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Kim, Gwihyun; Park, Seran; Shin, Hyunsu; Song, Seungho; Oh, Hoon-Jung; Ko, Dae Hong; Choi, Jung-Il; Baik, Seung Jae

    2017-12-01

    Atmospheric pressure (AP) operation of plasma-enhanced chemical vapor deposition (PECVD) is one of promising concepts for high quality and low cost processing. Atmospheric plasma discharge requires narrow gap configuration, which causes an inherent feature of AP PECVD. Two dimensional radial gas flows in AP PECVD induces radial variation of mass-transport and that of substrate temperature. The opposite trend of these variations would be the key consideration in the development of uniform deposition process. Another inherent feature of AP PECVD is confined plasma discharge, from which volume power density concept is derived as a key parameter for the control of deposition rate. We investigated deposition rate as a function of volume power density, gas flux, source gas partial pressure, hydrogen partial pressure, plasma source frequency, and substrate temperature; and derived a design guideline of deposition tool and process development in terms of deposition rate and uniformity.

  19. Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

    NARCIS (Netherlands)

    Ponomarev, M.; Verheijen, M.A.; Keuning, W.; Sanden, van de M.C.M.; Creatore, M.

    2012-01-01

    Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO:Al layers by focusing on the control

  20. Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition

    NARCIS (Netherlands)

    Saeed, S.; Buters, F.; Dohnalova, K.; Wosinski, L.; Gregorkiewicz, T.

    2014-01-01

    We present a structural and optical study of solid-state dispersions of Ge nanocrystals prepared by plasma-enhanced chemical vapor deposition. Structural analysis shows the presence of nanocrystalline germanium inclusions embedded in an amorphous matrix of Si-rich SiO2. Optical characterization

  1. Plasma-enhanced chemical vapor deposited silicon oxynitride films for optical waveguide bridges for use in mechanical sensors

    DEFF Research Database (Denmark)

    Storgaard-Larsen, Torben; Leistiko, Otto

    1997-01-01

    In this paper the influence of RF power, ammonia flow, annealing temperature, and annealing time on the optical and mechanical properties of plasma-enhanced chemically vapor deposited silicon oxynitride films, is presented. A low refractive index (1.47 to 1.48) film having tensile stress has been...

  2. Electrochemical properties of N-doped hydrogenated amorphous carbon films fabricated by plasma-enhanced chemical vapor deposition methods

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Yoriko; Furuta, Masahiro; Kuriyama, Koichi; Kuwabara, Ryosuke; Katsuki, Yukiko [Division of Environmental Science and Engineering, Graduate School of Science and Engineering, Yamaguchi University, 1677-1 Yoshida, Yamaguchi-shi, Yamaguchi 753-8512 (Japan); Kondo, Takeshi [Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Fujishima, Akira [Kanagawa Advanced Science and Technology (KAST), 3-2-1, Sakato, Takatsu-ku, Kawasaki-shi, Kanagawa 213-0012 (Japan); Honda, Kensuke, E-mail: khonda@yamaguchi-u.ac.j [Division of Environmental Science and Engineering, Graduate School of Science and Engineering, Yamaguchi University, 1677-1 Yoshida, Yamaguchi-shi, Yamaguchi 753-8512 (Japan)

    2011-01-01

    Nitrogen-doped hydrogenated amorphous carbon thin films (a-C:N:H, N-doped DLC) were synthesized with microwave-assisted plasma-enhanced chemical vapor deposition widely used for DLC coating such as the inner surface of PET bottles. The electrochemical properties of N-doped DLC surfaces that can be useful in the application as an electrochemical sensor were investigated. N-doped DLC was easily fabricated using the vapor of nitrogen contained hydrocarbon as carbon and nitrogen source. A N/C ratio of resulting N-doped DLC films was 0.08 and atomic ratio of sp{sup 3}/sp{sup 2}-bonded carbons was 25/75. The electrical resistivity and optical gap were 0.695 {Omega} cm and 0.38 eV, respectively. N-doped DLC thin film was found to be an ideal polarizable electrode material with physical stability and chemical inertness. The film has a wide working potential range over 3 V, low double-layer capacitance, and high resistance to electrochemically induced corrosion in strong acid media, which were the same level as those for boron-doped diamond (BDD). The charge transfer rates for the inorganic redox species, Fe{sup 2+/3+} and Fe(CN){sub 6}{sup 4-/3-} at N-doped DLC were sufficiently high. The redox reaction of Ce{sup 2+/3+} with standard potential higher than H{sub 2}O/O{sub 2} were observed due to the wider potential window. At N-doped DLC, the change of the kinetics of Fe(CN){sub 6}{sup 3-/4-} by surface oxidation is different from that at BDD. The rate of Fe(CN){sub 6}{sup 3-/4-} was not varied before and after oxidative treatment on N-doped DLC includes sp{sup 2} carbons, which indicates high durability of the electrochemical activity against surface oxidation.

  3. Substrate Effect on Plasma Clean Efficiency in Plasma Enhanced Chemical Vapor Deposition System

    Directory of Open Access Journals (Sweden)

    Shiu-Ko JangJian

    2007-01-01

    Full Text Available The plasma clean in a plasma-enhanced chemical vapor deposition (PECVD system plays an important role to ensure the same chamber condition after numerous film depositions. The periodic and applicable plasma clean in deposition chamber also increases wafer yield due to less defect produced during the deposition process. In this study, the plasma clean rate (PCR of silicon oxide is investigated after the silicon nitride deposited on Cu and silicon oxide substrates by remote plasma system (RPS, respectively. The experimental results show that the PCR drastically decreases with Cu substrate compared to that with silicon oxide substrate after numerous silicon nitride depositions. To understand the substrate effect on PCR, the surface element analysis and bonding configuration are executed by X-ray photoelectron spectroscopy (XPS. The high resolution inductively coupled plasma mass spectrometer (HR-ICP-MS is used to analyze microelement of metal ions on the surface of shower head in the PECVD chamber. According to Cu substrate, the results show that micro Cu ion and the CuOx bonding can be detected on the surface of shower head. The Cu ion contamination might grab the fluorine radicals produced by NF3 ddissociation in the RPS and that induces the drastic decrease on PCR.

  4. Diamond-like carbon films deposited on polycarbonates by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Guo, C.T. [Department of Computer and Communication, Diwan College of Management, 72141 Taiwan (China)], E-mail: ctguo@dwu.edu.tw

    2008-04-30

    Diamond-like carbon films were coated on optical polycarbonate using plasma-enhanced chemical vapor deposition. A mixture of SiH{sub 4} and CH{sub 4}/H{sub 2} gases was utilized to reduce the internal compressive stress of the deposited films. The structure of the DLC films was characterized as a function of film thickness using Raman spectroscopy. The dependence of G peak positions and the intensity ratio of I{sub D}/I{sub G} on the DLC film thicknesses was analyzed in detail. Other studies involving atomic force microscopy, ultraviolet visible spectrometry, and three adhesion tests were conducted. Good transparency in the visible region, and good adhesion between diamond-like carbon films and polycarbonate were demonstrated. One-time recordings before and after a DLC film was coated on compact rewritable disc substrates were analyzed as a case study. The results reveal that the diamond-like carbon film overcoating the optical polycarbonates effectively protects the storage media.

  5. Optimization of silicon oxynitrides by plasma-enhanced chemical vapor deposition for an interferometric biosensor

    Science.gov (United States)

    Choo, Sung Joong; Lee, Byung-Chul; Lee, Sang-Myung; Park, Jung Ho; Shin, Hyun-Joon

    2009-09-01

    In this paper, silicon oxynitride layers deposited with different plasma-enhanced chemical vapor deposition (PECVD) conditions were fabricated and optimized, in order to make an interferometric sensor for detecting biochemical reactions. For the optimization of PECVD silicon oxynitride layers, the influence of the N2O/SiH4 gas flow ratio was investigated. RF power in the PEVCD process was also adjusted under the optimized N2O/SiH4 gas flow ratio. The optimized silicon oxynitride layer was deposited with 15 W in chamber under 25/150 sccm of N2O/SiH4 gas flow rates. The clad layer was deposited with 20 W in chamber under 400/150 sccm of N2O/SiH4 gas flow condition. An integrated Mach-Zehnder interferometric biosensor based on optical waveguide technology was fabricated under the optimized PECVD conditions. The adsorption reaction between bovine serum albumin (BSA) and the silicon oxynitride surface was performed and verified with this device.

  6. Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Santra, T. S.; Liu, C. H.; Bhattacharyya, T. K.; Patel, P.; Barik, T. K.

    2010-01-01

    Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of C-C, C-H, Si-C, and Si-H bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio I D /I G . Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

  7. Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Santra, T S; Liu, C H [Institute of Nanoengineering and Microsystems (NEMS), National Tsing Hua University, Hsinchu, Taiwan 30043 (China); Bhattacharyya, T K [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721302, West Bengal (India); Patel, P [Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801 (United States); Barik, T K [School of Applied Sciences, Haldia Institute of Technology, Haldia 721657, Purba Medinipur, West Bengal (India)

    2010-06-15

    Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of C-C, C-H, Si-C, and Si-H bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio I{sub D}/I{sub G}. Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

  8. Electrical transport properties of graphene nanowalls grown at low temperature using plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Zhao, Rong; Ahktar, Meysam; Alruqi, Adel; Dharmasena, Ruchira; Jasinski, Jacek B.; Thantirige, Rukshan M.; Sumanasekera, Gamini U.

    2017-05-01

    In this work, we report the electrical transport properties of uniform and vertically oriented graphene (graphene nanowalls) directly synthesized on multiple substrates including glass, Si/SiO2 wafers, and copper foils using radio-frequency plasma enhanced chemical vapor deposition (PECVD) with methane (CH4) as the precursor at relatively low temperatures. The temperature for optimum growth was established with the aid of transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy. This approach offers means for low-cost graphene nanowalls growth on an arbitrary substrate with the added advantage of transfer-free device fabrication. The temperature dependence of the electrical transport properties (resistivity and thermopower) were studied in the temperature range, 30-300 K and analyzed with a combination of 2D-variable range hopping (VRH) and thermally activated (TA) conduction mechanisms. An anomalous temperature dependence of the thermopower was observed for all the samples and explained with a combination of a diffusion term having a linear temperature dependence plus a term with an inverse temperature dependence.

  9. Modeling of Sheath Ion-Molecule Reactions in Plasma Enhanced Chemical Vapor Deposition of Carbon Nanotubes

    Science.gov (United States)

    Hash, David B.; Govindan, T. R.; Meyyappan, M.

    2004-01-01

    In many plasma simulations, ion-molecule reactions are modeled using ion energy independent reaction rate coefficients that are taken from low temperature selected-ion flow tube experiments. Only exothermic or nearly thermoneutral reactions are considered. This is appropriate for plasma applications such as high-density plasma sources in which sheaths are collisionless and ion temperatures 111 the bulk p!asma do not deviate significantly from the gas temperature. However, for applications at high pressure and large sheath voltages, this assumption does not hold as the sheaths are collisional and ions gain significant energy in the sheaths from Joule heating. Ion temperatures and thus reaction rates vary significantly across the discharge, and endothermic reactions become important in the sheaths. One such application is plasma enhanced chemical vapor deposition of carbon nanotubes in which dc discharges are struck at pressures between 1-20 Torr with applied voltages in the range of 500-700 V. The present work investigates The importance of the inclusion of ion energy dependent ion-molecule reaction rates and the role of collision induced dissociation in generating radicals from the feedstock used in carbon nanotube growth.

  10. Controlled surface diffusion in plasma-enhanced chemical vapor deposition of GaN nanowires

    International Nuclear Information System (INIS)

    Hou, W C; Hong, Franklin Chau-Nan

    2009-01-01

    This study investigates the growth of GaN nanowires by controlling the surface diffusion of Ga species on sapphire in a plasma-enhanced chemical vapor deposition (CVD) system. Under nitrogen-rich growth conditions, Ga has a tendency to adsorb on the substrate surface diffusing to nanowires to contribute to their growth. The significance of surface diffusion on the growth of nanowires is dependent on the environment of the nanowire on the substrate surface as well as the gas phase species and compositions. Under nitrogen-rich growth conditions, the growth rate is strongly dependent on the surface diffusion of gallium, but the addition of 5% hydrogen in nitrogen plasma instantly diminishes the surface diffusion effect. Gallium desorbs easily from the surface by reaction with hydrogen. On the other hand, under gallium-rich growth conditions, nanowire growth is shown to be dominated by the gas phase deposition, with negligible contribution from surface diffusion. This is the first study reporting the inhibition of surface diffusion effects by hydrogen addition, which can be useful in tailoring the growth and characteristics of nanowires. Without any evidence of direct deposition on the nanowire surface, gallium and nitrogen are shown to dissolve into the catalyst for growing the nanowires at 900 deg. C.

  11. Preparation and structure of porous dielectrics by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Gates, S. M.; Neumayer, D. A.; Sherwood, M. H.; Grill, A.; Wang, X.; Sankarapandian, M.

    2007-01-01

    The preparation of ultralow dielectric constant porous silicon, carbon, oxygen, hydrogen alloy dielectrics, called 'pSiCOH', using a production 200 mm plasma enhanced chemical vapor deposition tool and a thermal treatment is reported here. The effect of deposition temperature on the pSiCOH film is examined using Fourier transform infrared (FTIR) spectroscopy, dielectric constant (k), and film shrinkage measurements. For all deposition temperatures, carbon in the final porous film is shown to be predominantly Si-CH 3 species, and lower k is shown to correlate with increased concentration of Si-CH 3 . NMR and FTIR spectroscopies clearly detect the loss of a removable, unstable, hydrocarbon (CH x ) phase during the thermal treatment. Also detected are increased cross-linking of the Si-O skeleton, and concentration changes for three distinct structures of carbon. In the as deposited films, deposition temperature also affects the hydrocarbon (CH x ) content and the presence of C=O and C=C functional groups

  12. Characterisation of silicon carbide films deposited by plasma-enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Iliescu, Ciprian; Chen Bangtao; Wei Jiashen; Pang, A.J.

    2008-01-01

    The paper presents a characterisation of amorphous silicon carbide films deposited in plasma-enhanced chemical vapour deposition (PECVD) reactors for MEMS applications. The main parameter was optimised in order to achieve a low stress and high deposition rate. We noticed that the high frequency mode (13.56 MHz) gives a low stress value which can be tuned from tensile to compressive by selecting the correct power. The low frequency mode (380 kHz) generates high compressive stress (around 500 MPa) due to ion bombardment and, as a result, densification of the layer achieved. Temperature can decrease the compressive value of the stress (due to annealing effect). A low etching rate of the amorphous silicon carbide layer was noticed for wet etching in KOH 30% at 80 o C (around 13 A/min) while in HF 49% the layer is practically inert. A very slow etching rate of amorphous silicon carbide layer in XeF 2 -7 A/min- was observed. The paper presents an example of this application: PECVD-amorphous silicon carbide cantilevers fabricated using surface micromachining by dry-released technique in XeF 2

  13. Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Broas, Mikael, E-mail: mikael.broas@aalto.fi; Vuorinen, Vesa [Department of Electrical Engineering and Automation, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sippola, Perttu; Pyymaki Perros, Alexander; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sajavaara, Timo [Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40014 Jyväskylä (Finland); Paulasto-Kröckel, Mervi [Department of Electrical Engineering and Automation, Aalto University. P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland)

    2016-07-15

    Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N{sub 2}:H{sub 2} plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the AlN films. Furthermore, dinitrogen triple bonds were identified with infrared spectroscopy in the films. The triple bonds broke after annealing at 1000 °C for 1 h which likely caused enhanced hydrolysis of the films. The nanostructure of the films was identified to be amorphous in the as-deposited state and to become nanocrystalline after 1 h of annealing at 1000 °C.

  14. Plasma effects in aligned carbon nanoflake growth by plasma-enhanced hot filament chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, B.B. [College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054 (China); Zheng, K. [Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124 (China); Cheng, Q.J., E-mail: qijin.cheng@xmu.edu.cn [School of Energy Research, Xiamen University, Xiamen 361005 (China); Ostrikov, K. [Plasma Nanoscience Center Australia (PNCA), Manufacturing Flagship, Commonwealth Scientific and Industrial Research Organization, PO Box 218, Lindfield 2070, NSW (Australia); Institute for Future Environments and School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Brisbane 4000, QLD (Australia); Plasma Nanoscience, School of Physics, The University of Sydney, Sydney 2006, NSW (Australia)

    2015-01-15

    Highlights: • Plasma-specific effects in the growth of carbon nanoflakes (CNFs) are studied. • Electic field in the plasma sheath promotes separation of CNFs from the substrate. • The orentention of GNFs is related to the combined electic force and growth effects. • The high growth grates of aligned GNFs are plasma-related. - Abstract: Carbon nanofilms are directly grown on silicon substrates by plasma-enhanced hot filament chemical vapor deposition in methane environment. It is shown that the nanofilms are composed of aligned carbon nanoflakes by extensive investigation of experimental results of field emission scanning electron microscopy, micro-Raman spectroscopy and transmission electron microscopy. In comparison with the graphene-like films grown without plasmas, the carbon nanoflakes grow in an alignment mode and the growth rate of the films is increased. The effects of the plasma on the growth of the carbon nanofilms are studied. The plasma plays three main effects of (1) promoting the separation of the carbon nanoflakes from the silicon substrate, (2) accelerating the motion of hydrocarbon radicals, and (3) enhancing the deposition of hydrocarbon ions onto the substrate surface. Due to these plasma-specific effects, the carbon nanofilms can be formed from the aligned carbon nanoflakes with a high rate. These results advance our knowledge on the synthesis, properties and applications of graphene-based materials.

  15. Atmospheric pressure plasma enhanced chemical vapor deposition of zinc oxide and aluminum zinc oxide

    International Nuclear Information System (INIS)

    Johnson, Kyle W.; Guruvenket, Srinivasan; Sailer, Robert A.; Ahrenkiel, S. Phillip; Schulz, Douglas L.

    2013-01-01

    Zinc oxide (ZnO) and aluminum-doped zinc oxide (AZO) thin films were deposited via atmospheric pressure plasma enhanced chemical vapor deposition. A second-generation precursor, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)(N,N′-diethylethylenediamine) zinc, exhibited significant vapor pressure and good stability at one atmosphere where a vaporization temperature of 110 °C gave flux ∼ 7 μmol/min. Auger electron spectroscopy confirmed that addition of H 2 O to the carrier gas stream mitigated F contamination giving nearly 1:1 metal:oxide stoichiometries for both ZnO and AZO with little precursor-derived C contamination. ZnO and AZO thin film resistivities ranged from 14 to 28 Ω·cm for the former and 1.1 to 2.7 Ω·cm for the latter. - Highlights: • A second generation precursor was utilized for atmospheric pressure film growth. • Addition of water vapor to the carrier gas stream led to a marked reduction of ZnF 2 . • Carbonaceous contamination from the precursor was minimal

  16. One-step synthesis of chlorinated graphene by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Liwei; Zhang, Hui; Zhang, Pingping; Sun, Xuhui, E-mail: xhsun@suda.edu.cn

    2015-08-30

    Highlights: • We developed a simple approach to synthesize the single layer chlorinated graphene. • CuCl{sub 2} on Cu surface is used as Cl source under the plasma treatment. • The formation of covalent C−Cl bond has been investigated by Raman and XPS. • Raman results indicate the p-type doping effect of chlorination. - Abstract: We developed an approach to synthesize the chlorinated single layer graphene (Cl-G) by one-step plasma enhanced chemical vapor deposition. Copper foil was simply treated with hydrochloric acid and then CuCl{sub 2} formed on the surface was used as Cl source under the assistance of plasma treatment. Compared with other two-step methods by post plasma/photochemical treatment of CVD-grown single layer graphene (SLG), one-step Cl-G synthesis approach is quite straightforward and effective. X-ray photoelectron spectroscopy (XPS) revealed that ∼2.45 atom% Cl remained in SLG. Compared with the pristine SLG, the obvious blue shifts of G band and 2D band along with the appearance of D’ band and D + G band in the Raman spectra indicate p-type doping of Cl-G.

  17. Liquid assisted plasma enhanced chemical vapour deposition with a non-thermal plasma jet at atmospheric pressure

    Czech Academy of Sciences Publication Activity Database

    Schäfer, J.; Fricke, K.; Mika, Filip; Pokorná, Zuzana; Zajíčková, L.; Foest, R.

    2017-01-01

    Roč. 630, MAY 30 (2017), s. 71-78 ISSN 0040-6090 R&D Projects: GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01 Institutional support: RVO:68081731 Keywords : plasma jet * liquid assisted plasma enhanced chemical * vapour deposition * silicon oxide Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering OBOR OECD: Coating and films Impact factor: 1.879, year: 2016

  18. Growth and characterization of nanodiamond layers prepared using the plasma-enhanced linear antennas microwave CVD system

    Energy Technology Data Exchange (ETDEWEB)

    Fendrych, Frantisek; Taylor, Andrew; Peksa, Ladislav; Kratochvilova, Irena; Kluiber, Zdenek; Fekete, Ladislav [Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i, Na Slovance 2, CZ-18221 Prague 8 (Czech Republic); Vlcek, Jan [Department of Physics and Measurement, Institute of Chemical Technology Prague, Technicka 5, CZ-16628 Prague 6 (Czech Republic); Rezacova, Vladimira; Petrak, Vaclav [Faculty of Biomedical Engineering, Czech Technical University, Sitna 3105, CZ-27201 Kladno 2 (Czech Republic); Liehr, Michael [Leybold Optics Dresden GmbH, Zur Wetterwarte 50, D-01109 Dresden (Germany); Nesladek, Milos, E-mail: fendrych@fzu.c [IMOMEC division, IMEC, Institute for Materials Research, University Hasselt, Wetenschapspark 1, B-3590 Diepenbeek (Belgium)

    2010-09-22

    Industrial applications of plasma-enhanced chemical vapour deposition (CVD) diamond grown on large area substrates, 3D shapes, at low substrate temperatures and on standard engineering substrate materials require novel plasma concepts. Based on the pioneering work of the group at AIST in Japan, the high-density coaxial delivery type of plasmas has been explored (Tsugawa et al 2006 New Diamond Front. Carbon Technol. 16 337-46). However, an important challenge is to obtain commercially interesting growth rates at very low substrate temperatures. In this work we introduce the concept of novel linear antenna sources, designed at Leybold Optics Dresden, using high-frequency pulsed MW discharge with a high plasma density. This type of pulse discharges leads to the preparation of nanocrystalline diamond (NCD) thin films, compared with ultra-NCD thin films prepared in (Tsugawa et al 2006 New Diamond Front. Carbon Technol. 16 337-46). We present optical emission spectroscopy data for the CH{sub 4}-CO{sub 2}-H{sub 2} gas chemistry and we discuss the basic properties of the NCD films grown.

  19. Microwave assisted chemical vapor infiltration

    International Nuclear Information System (INIS)

    Devlin, D.J.; Currier, R.P.; Barbero, R.S.; Espinoza, B.F.; Elliott, N.

    1991-01-01

    A microwave assisted process for production of continuous fiber reinforced ceramic matrix composites is described. A simple apparatus combining a chemical vapor infiltration reactor with a conventional 700 W multimode oven is described. Microwave induced inverted thermal gradients are exploited with the ultimate goal of reducing processing times on complex shapes. Thermal gradients in stacks of SiC (Nicalon) cloths have been measured using optical thermometry. Initial results on the ''inside out'' deposition of SiC via decomposition of methyltrichlorosilane in hydrogen are presented. Several key processing issues are identified and discussed. 5 refs

  20. The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Hao [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States)]. E-mail: hao.jiang@wpafb.af.mil; Hong Lianggou [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States); Venkatasubramanian, N. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Grant, John T. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Eyink, Kurt [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Wiacek, Kevin [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Fries-Carr, Sandra [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Enlow, Jesse [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Bunning, Timothy J. [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States)

    2007-02-26

    Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant ({epsilon} {sub r}) and dielectric loss (tan {delta}) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F {sub b}) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F{sub b} of 610 V/{mu}m, an {epsilon} {sub r} of 3.07, and a tan {delta} of 7.0 x 10{sup -3} at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss.

  1. The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

    International Nuclear Information System (INIS)

    Jiang Hao; Hong Lianggou; Venkatasubramanian, N.; Grant, John T.; Eyink, Kurt; Wiacek, Kevin; Fries-Carr, Sandra; Enlow, Jesse; Bunning, Timothy J.

    2007-01-01

    Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant (ε r ) and dielectric loss (tan δ) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F b ) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F b of 610 V/μm, an ε r of 3.07, and a tan δ of 7.0 x 10 -3 at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss

  2. LiF enhanced nucleation of the low temperature microcrystalline silicon prepared by plasma enhanced chemical vapour deposition

    Czech Academy of Sciences Publication Activity Database

    Stuchlík, Jiří; Ledinský, Martin; Honda, Shinya; Drbohlav, Ivo; Mates, Tomáš; Fejfar, Antonín; Hruška, Karel; Stuchlíková, The-Ha; Kočka, Jan

    2009-01-01

    Roč. 517, č. 24 (2009), s. 6829-6832 ISSN 0040-6090 R&D Projects: GA AV ČR KAN400100701; GA ČR(CZ) GD202/05/H003; GA MŠk LC510; GA AV ČR IAA1010413 Institutional research plan: CEZ:AV0Z10100521 Keywords : amorphous hydrogenated silicon * atomic force microscopy * plasma-enhanced chemical vapour deposition, * nucleation * Raman scattering * lithium fluoride Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.727, year: 2009

  3. Optical and electrical characteristics of plasma enhanced chemical vapor deposition boron carbonitride thin films derived from N-trimethylborazine precursor

    Energy Technology Data Exchange (ETDEWEB)

    Sulyaeva, Veronica S., E-mail: veronica@niic.nsc.ru [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kosinova, Marina L.; Rumyantsev, Yurii M.; Kuznetsov, Fedor A. [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kesler, Valerii G. [Laboratory of Physical Principles for Integrated Microelectronics, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Kirienko, Viktor V. [Laboratory of Nonequilibrium Semiconductors Systems, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation)

    2014-05-02

    Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition using N-trimethylborazine as a precursor. The films were deposited on Si(100) and fused silica substrates. The grown films were characterized by ellipsometry, Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, spectrophotometry, capacitance–voltage and current–voltage measurements. The deposition parameters, such as substrate temperature (373–973 K) and gas phase composition were varied. Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers in the range of 300–2000 nm, the transmittance as high as 93% has been achieved. BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9 depending on the synthesis conditions. - Highlights: • Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition. • N-trimethylborazine was used as a precursor. • Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers (93%). • BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9.

  4. Optical and electrical characteristics of plasma enhanced chemical vapor deposition boron carbonitride thin films derived from N-trimethylborazine precursor

    International Nuclear Information System (INIS)

    Sulyaeva, Veronica S.; Kosinova, Marina L.; Rumyantsev, Yurii M.; Kuznetsov, Fedor A.; Kesler, Valerii G.; Kirienko, Viktor V.

    2014-01-01

    Thin BC x N y films have been obtained by plasma enhanced chemical vapor deposition using N-trimethylborazine as a precursor. The films were deposited on Si(100) and fused silica substrates. The grown films were characterized by ellipsometry, Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, spectrophotometry, capacitance–voltage and current–voltage measurements. The deposition parameters, such as substrate temperature (373–973 K) and gas phase composition were varied. Low temperature BC x N y films were found to be high optical transparent layers in the range of 300–2000 nm, the transmittance as high as 93% has been achieved. BC x N y layers are dielectrics with dielectric constant k = 2.2–8.9 depending on the synthesis conditions. - Highlights: • Thin BC x N y films have been obtained by plasma enhanced chemical vapor deposition. • N-trimethylborazine was used as a precursor. • Low temperature BC x N y films were found to be high optical transparent layers (93%). • BC x N y layers are dielectrics with dielectric constant k = 2.2–8.9

  5. Plasma-enhanced chemical vapor deposition of graphene on copper substrates

    Directory of Open Access Journals (Sweden)

    Nicolas Woehrl

    2014-04-01

    Full Text Available A plasma enhanced vapor deposition process is used to synthesize graphene from a hydrogen/methane gas mixture on copper samples. The graphene samples were transferred onto SiO2 substrates and characterized by Raman spectroscopic mapping and atomic force microscope topographical mapping. Analysis of the Raman bands shows that the deposited graphene is clearly SLG and that the sheets are deposited on large areas of several mm2. The defect density in the graphene sheets is calculated using Raman measurements and the influence of the process pressure on the defect density is measured. Furthermore the origin of these defects is discussed with respect to the process parameters and hence the plasma environment.

  6. Role of chlorine in the nanocrystalline silicon film formation by rf plasma-enhanced chemical vapor deposition of chlorinated materials

    International Nuclear Information System (INIS)

    Shirai, Hajime

    2004-01-01

    We demonstrate the disorder-induced low-temperature crystallization in the nanocrystalline silicon film growth by rf plasma-enhanced chemical vapor deposition of H 2 -diluted SiH 2 Cl 2 and SiCl 4 . The combination of the chemical reactivity of SiCld (d: dangling bond) and SiHCl complexes and the release of the disorder-induced stress near the growing surface tightly correlate with the phase transitionity of SiCld and SiHCl complexes near the growing surface with the aid of atomic hydrogen, which induce higher degree of disorder in the a-Si network. These features are most prominent in the SiCl 4 compared with those of SiH 2 Cl 2 and SiH 4 , which preferentially enhance the nanocrystalline Si formation

  7. Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiOx layers for application in solar cells

    Science.gov (United States)

    Klingsporn, M.; Kirner, S.; Villringer, C.; Abou-Ras, D.; Costina, I.; Lehmann, M.; Stannowski, B.

    2016-06-01

    Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.

  8. Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

    Science.gov (United States)

    Alharthi, Bader; Grant, Joshua M.; Dou, Wei; Grant, Perry C.; Mosleh, Aboozar; Du, Wei; Mortazavi, Mansour; Li, Baohua; Naseem, Hameed; Yu, Shui-Qing

    2018-05-01

    Germanium (Ge) films have been grown on silicon (Si) substrate by ultrahigh-vacuum chemical vapor deposition with plasma enhancement (PE). Argon plasma was generated using high-power radiofrequency (50 W) to assist in germane decomposition at low temperature. The growth temperature was varied in the low range of 250°C to 450°C to make this growth process compatible with complementary metal-oxide-semiconductor technology. The material and optical properties of the grown Ge films were investigated. The material quality was determined by Raman and x-ray diffraction techniques, revealing growth of crystalline films in the temperature range of 350°C to 450°C. Photoluminescence spectra revealed improved optical quality at growth temperatures of 400°C and 450°C. Furthermore, material quality study using transmission electron microscopy revealed existence of defects in the Ge layer grown at 400°C. Based on the etch pit density, the average threading dislocation density in the Ge layer obtained at this growth temperature was measured to be 4.5 × 108 cm-2. This result was achieved without any material improvement steps such as use of graded buffer or thermal annealing. Comparison between PE and non-plasma-enhanced growth, in the same machine at otherwise the same growth conditions, indicated increased growth rate and improved material and optical qualities for PE growth.

  9. Comparative X-ray photoelectron spectroscopy study of plasma enhanced chemical vapor deposition and micro pressure chemical vapor deposition of phosphorus silicate glass layers after rapid thermal annealing

    International Nuclear Information System (INIS)

    Beshkov, G.; Krastev, V.; Gogova, D.; Talik, E.; Adamies, M.

    2008-01-01

    In this paper the bonding state of Phosphorus Silicate Glass (PSG) layers obtained by two different technological approaches, i.e. in two types of reactors: Plasma Enhanced Chemical Vapor Deposition (PECVD) and Micro Pressure Chemical Vapor Deposition (MPCVD) are investigated employing XPS and AES. The PSG layers are deposited at 380 0 C and 420 0 C in corresponding reactors. XPS and AES analyses show that Si2p peak recorded from PECVD layers are not as expected at their position characteristics of silicon dioxide but instead they are at the characteristic of elemental silicon. Plasma enhancement during deposition leads to less oxidized and more inhomogeneous layer. After rapid thermal annealing the Si2p peak is situated at position characteristic of silicon dioxide. (authors)

  10. Atomic force microscopy indentation of fluorocarbon thin films fabricated by plasma enhanced chemical deposition at low radio frequency power

    International Nuclear Information System (INIS)

    Sirghi, L.; Ruiz, A.; Colpo, P.; Rossi, F.

    2009-01-01

    Atomic force microscopy (AFM) indentation technique is used for characterization of mechanical properties of fluorocarbon (CF x ) thin films obtained from C 4 F 8 gas by plasma enhanced chemical vapour deposition at low r.f. power (5-30 W) and d.c. bias potential (10-80 V). This particular deposition method renders films with good hydrophobic property and high plastic compliance. Commercially available AFM probes with stiff cantilevers (10-20 N/m) and silicon sharpened tips (tip radius < 10 nm) are used for indentations and imaging of the resulted indentation imprints. Force depth curves and imprint characteristics are used for determination of film hardness, elasticity modulus and plasticity index. The measurements show that the decrease of the discharge power results in deposition of films with decreased hardness and stiffness and increased plasticity index. Nanolithography based on AFM indentation is demonstrated on thin films (thickness of 40 nm) with good plastic compliance.

  11. Synthesis and growth mechanism of Fe-catalyzed carbon nanotubes by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Jiang Jun; Feng Tao; Cheng Xinhong; Dai Lijuan; Cao Gongbai; Jiang Bingyao; Wang Xi; Liu Xianghuai; Zou Shichang

    2006-01-01

    Plasma-enhanced chemical vapor deposition (PECVD) was used to grow Fe-catalyzed carbon nanotubes (CNTs). The nanotubes had a uniform diameter in the range of about 10-20 nm. A base growth mode was responsible for the CNTs growth using a mixture of H 2 (60 sccm) and C 2 H 2 (15 sccm). For a mixture of H 2 (100 sccm) and C 2 H 2 (25 sccm), a complicated growth mechanism took place involving both the base growth and the tip growth. X-ray photoelectron spectroscopy measurements revealed that the grown CNTs contained C-H covalent bonds and Fe-C bonds located at the interface between them and the substrates. The factors determining the growth mechanism of CNTs are discussed and their growth mechanisms with the different gas ratios are suggested

  12. Characteristics of Ge-Sb-Te films prepared by cyclic pulsed plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Suk, Kyung-Suk; Jung, Ha-Na; Woo, Hee-Gweon; Park, Don-Hee; Kim, Do-Heyoung

    2010-05-01

    Ge-Sb-Te (GST) thin films were deposited on TiN, SiO2, and Si substrates by cyclic-pulsed plasma-enhanced chemical vapor deposition (PECVD) using Ge{N(CH3)(C2H5)}, Sb(C3H7)3, Te(C3H7)3 as precursors in a vertical flow reactor. Plasma activated H2 was used as the reducing agent. The growth behavior was strongly dependent on the type of substrate. GST grew as a continuous film on TiN regardless of the substrate temperature. However, GST formed only small crystalline aggregates on Si and SiO2 substrates, not a continuous film, at substrate temperatures > or = 200 degrees C. The effects of the deposition temperature on the surface morphology, roughness, resistivity, crystallinity, and composition of the GST films were examined.

  13. Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Saeed, Saba; Buters, Frank; Dohnalova, Katerina; Wosinski, Lech; Gregorkiewicz, Tom

    2014-10-10

    We present a structural and optical study of solid-state dispersions of Ge nanocrystals prepared by plasma-enhanced chemical vapor deposition. Structural analysis shows the presence of nanocrystalline germanium inclusions embedded in an amorphous matrix of Si-rich SiO(2).Optical characterization reveals two prominent emission bands centered around 2.6 eV and 3.4 eV, and tunable by excitation energy. In addition, the lower energy band shows an excitation power-dependent blue shift of up to 0.3 eV. Decay dynamics of the observed emission contains fast (nanosecond) and slow (microseconds) components, indicating contributions of several relaxation channels. Based on these material characteristics, a possible microscopic origin of the individual emission bands is discussed.

  14. An economic analysis of the deposition of electrochromic WO3 via sputtering or plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Garg, D.; Henderson, P.B.; Hollingsworth, R.E.; Jensen, D.G.

    2005-01-01

    The costs of manufacturing electrochromic WO 3 thin films deposited by either radio frequency plasma enhanced chemical vapor deposition (PECVD) or DC reactive magnetron sputtering of metal targets were modeled. Both inline systems for large area glass substrates and roll-to-roll systems for flexible webs were compared. Costs of capital, depreciation, raw materials, labor, power, and other miscellaneous items were accounted for in the model. The results predict that on similar sized systems, PECVD can produce electrochromic WO 3 for as little as one-third the cost, and have more than 10 times the annual production capacity of sputtering. While PECVD cost is dominated by raw materials, primarily WF 6 , sputtering cost is dominated by labor and depreciation

  15. In situ growth rate measurements during plasma-enhanced chemical vapour deposition of vertically aligned multiwall carbon nanotube films

    International Nuclear Information System (INIS)

    Joensson, M; Nerushev, O A; Campbell, E E B

    2007-01-01

    In situ laser reflectivity measurements are used to monitor the growth of multiwalled carbon nanotube (MWCNT) films grown by DC plasma-enhanced chemical vapour deposition (PECVD) from an iron catalyst film deposited on a silicon wafer. In contrast to thermal CVD growth, there is no initial increase in the growth rate; instead, the initial growth rate is high (as much as 10 μm min -1 ) and then drops off rapidly to reach a steady level (2 μm min -1 ) for times beyond 1 min. We show that a limiting factor for growing thick films of multiwalled nanotubes (MWNTs) using PECVD can be the formation of an amorphous carbon layer at the top of the growing nanotubes. In situ reflectivity measurements provide a convenient technique for detecting the onset of the growth of this layer

  16. Si Nano wires Produced by Very High Frequency Plasma Enhanced Chemical Vapor Deposition (PECVD) via VLS Mechanism

    International Nuclear Information System (INIS)

    Yussof Wahab; Yussof Wahab; Habib Hamidinezhad; Habib Hamidinezhad

    2013-01-01

    Silicon nano wires (SiNWs) with diameter of about a few nanometers and length of 3 μm on silicon wafers were synthesized by very high frequency plasma enhanced chemical vapor deposition. Scanning electron microscopy (SEM) observations showed that the silicon nano wires were grown randomly and energy-dispersive X-ray spectroscopy analysis indicates that the nano wires have the composition of Si, Au and O elements. The SiNWs were characterized by high resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. SEM micrographs displayed SiNWs that are needle-like with a diameter ranged from 30 nm at the top to 100 nm at the bottom of the wire and have length a few of micrometers. In addition, HRTEM showed that SiNWs consist of crystalline silicon core and amorphous silica layer. (author)

  17. An economic analysis of the deposition of electrochromic WO{sub 3} via sputtering or plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garg, D. [Air Products and Chemicals Inc., 7201 Hamilton Blvd., Allentown, PA 18195-7201 (United States); Henderson, P.B. [Air Products and Chemicals Inc., 7201 Hamilton Blvd., Allentown, PA 18195-7201 (United States)]. E-mail: henderpb@airproducts.co; Hollingsworth, R.E. [ITN Energy Systems Inc., 8130 Shaffer Pkwy, Littleton, CO 80127 (United States); Jensen, D.G. [ITN Energy Systems Inc., 8130 Shaffer Pkwy, Littleton, CO 80127 (United States)

    2005-06-15

    The costs of manufacturing electrochromic WO{sub 3} thin films deposited by either radio frequency plasma enhanced chemical vapor deposition (PECVD) or DC reactive magnetron sputtering of metal targets were modeled. Both inline systems for large area glass substrates and roll-to-roll systems for flexible webs were compared. Costs of capital, depreciation, raw materials, labor, power, and other miscellaneous items were accounted for in the model. The results predict that on similar sized systems, PECVD can produce electrochromic WO{sub 3} for as little as one-third the cost, and have more than 10 times the annual production capacity of sputtering. While PECVD cost is dominated by raw materials, primarily WF{sub 6}, sputtering cost is dominated by labor and depreciation.

  18. Nanostructure and optical properties of CeO{sub 2} thin films obtained by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Barreca, D.; Bruno, G.; Gasparotto, A.; Losurdo, M.; Tondello, E

    2003-12-15

    In the present study, Spectroscopic Ellipsometry (SE) is used to investigate the interrelations between nanostructure and optical properties of CeO{sub 2} thin films deposited by Plasma-Enhanced Chemical Vapor Deposition (PE-CVD). The layers were synthesized in Ar and Ar-O{sub 2} plasmas on Si(100) substrates at temperatures lower than 300 deg. C. Both the real and imaginary parts of the complex dielectric functions and, subsequently, the optical constants of the films are derived up to 6.0 eV photon energy. Particular attention is devoted to the influence of synthesis conditions and sample properties on the optical response, taking into account the effects of surface roughness and SiO{sub 2} interface layer on Si.

  19. Characterization of thin TiO2 films prepared by plasma enhanced chemical vapour deposition for optical and photocatalytic applications

    International Nuclear Information System (INIS)

    Sobczyk-Guzenda, A.; Gazicki-Lipman, M.; Szymanowski, H.; Kowalski, J.; Wojciechowski, P.; Halamus, T.; Tracz, A.

    2009-01-01

    Thin titanium oxide films were deposited using a radio frequency (RF) plasma enhanced chemical vapour deposition method. Their optical properties and thickness were determined by means of ultraviolet-visible absorption spectrophotometry. Films of the optical parameters very close to those of titanium dioxide have been obtained at the high RF power input. Their optical quality is high enough to allow for their use in a construction of stack interference optical filters. At the same time, these materials exhibit strong photocatalytic effects. The results of structural analysis, carried out by Raman Shift Spectroscopy, show that the coatings posses amorphous structure. However, Raman spectra of the same films subjected to thermal annealing at 450 o C disclose an appearance of a crystalline form, namely that of anatase. Surface morphology of the films has also been characterized by Atomic Force Microscopy revealing granular, broccoli-like topography of the films.

  20. Formation of apatite on hydrogenated amorphous silicon (a-Si:H) film deposited by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Liu Xuanyong; Chu, Paul K.; Ding Chuanxian

    2007-01-01

    Hydrogenated amorphous silicon films were fabricated on p-type, 100 mm diameter silicon wafers by plasma-enhanced chemical vapor deposition (PECVD) using silane and hydrogen. The structure and composition of the hydrogenated amorphous silicon films were investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy (XTEM). The hydrogenated amorphous silicon films were subsequently soaked in simulated body fluids to evaluate apatite formation. Carbonate-containing hydroxyapatite (bone-like apatite) was formed on the surface suggesting good bone conductivity. The amorphous structure and presence of surface Si-H bonds are believed to induce apatite formation on the surface of the hydrogenated amorphous silicon film. A good understanding of the surface bioactivity of silicon-based materials and means to produce a bioactive surface is important to the development of silicon-based biosensors and micro-devices that are implanted inside humans

  1. Formation of apatite on hydrogenated amorphous silicon (a-Si:H) film deposited by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liu Xuanyong [Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China) and Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)]. E-mail: xyliu@mail.sic.ac.cn; Chu, Paul K. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)]. E-mail: paul.chu@cityu.edu.hk; Ding Chuanxian [Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)

    2007-01-15

    Hydrogenated amorphous silicon films were fabricated on p-type, 100 mm diameter <1 0 0> silicon wafers by plasma-enhanced chemical vapor deposition (PECVD) using silane and hydrogen. The structure and composition of the hydrogenated amorphous silicon films were investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy (XTEM). The hydrogenated amorphous silicon films were subsequently soaked in simulated body fluids to evaluate apatite formation. Carbonate-containing hydroxyapatite (bone-like apatite) was formed on the surface suggesting good bone conductivity. The amorphous structure and presence of surface Si-H bonds are believed to induce apatite formation on the surface of the hydrogenated amorphous silicon film. A good understanding of the surface bioactivity of silicon-based materials and means to produce a bioactive surface is important to the development of silicon-based biosensors and micro-devices that are implanted inside humans.

  2. Sticking non-stick: Surface and Structure control of Diamond-like Carbon in Plasma Enhanced Chemical Vapour Deposition

    Science.gov (United States)

    Jones, B. J.; Nelson, N.

    2016-10-01

    This short review article explores the practical use of diamond-like carbon (DLC) produced by plasma enhanced chemical vapour deposition (PECVD). Using as an example issues relating to the DLC coating of a hand-held surgical device, we draw on previous works using atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, tensiometry and electron paramagnetic resonance. Utilising data from these techniques, we examine the surface structure, substrate-film interface and thin film microstructure, such as sp2/sp3 ratio (graphitic/diamond-like bonding ratio) and sp2 clustering. We explore the variations in parameters describing these characteristics, and relate these to the final device properties such as friction, wear resistance, and diffusion barrier integrity. The material and device characteristics are linked to the initial plasma and substrate conditions.

  3. Sticking non-stick: Surface and Structure control of Diamond-like Carbon in Plasma Enhanced Chemical Vapour Deposition

    International Nuclear Information System (INIS)

    Jones, B J; Nelson, N

    2016-01-01

    This short review article explores the practical use of diamond-like carbon (DLC) produced by plasma enhanced chemical vapour deposition (PECVD). Using as an example issues relating to the DLC coating of a hand-held surgical device, we draw on previous works using atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, tensiometry and electron paramagnetic resonance. Utilising data from these techniques, we examine the surface structure, substrate-film interface and thin film microstructure, such as sp 2 /sp 3 ratio (graphitic/diamond-like bonding ratio) and sp 2 clustering. We explore the variations in parameters describing these characteristics, and relate these to the final device properties such as friction, wear resistance, and diffusion barrier integrity. The material and device characteristics are linked to the initial plasma and substrate conditions. (paper)

  4. Transport properties of field effect transistors with randomly networked single walled carbon nanotubes grown by plasma enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Kim, Un Jeong; Park, Wanjun

    2009-01-01

    The transport properties of randomly networked single walled carbon nanotube (SWNT) transistors with different channel lengths of L c = 2-10 μm were investigated. Randomly networked SWNTs were directly grown for the two different densities of ρ ∼ 25 μm -2 and ρ ∼ 50 μm -2 by water plasma enhanced chemical vapour deposition. The field effect transport is governed mainly by formation of the current paths that is related to the nanotube density. On the other hand, the off-state conductivity deviates from linear dependence for both nanotube density and channel length. The field effect mobility of holes is estimated as 4-13 cm 2 V -1 s -1 for the nanotube transistors based on the simple MOS theory. The mobility is increased for the higher density without meaningful dependence on the channel lengths.

  5. The growth of axially modulated p–n GaN nanowires by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Wu, Tung-Hsien; Hong, Franklin Chau-Nan

    2013-01-01

    Due to the n-type characteristics of intrinsic gallium nitride, p-type gallium nitride (GaN) is more difficult to synthesize than n-type gallium nitride in forming the p–n junctions for optoelectronic applications. For the growth of the p-type gallium nitride, magnesium is used as the dopant. The Mg-doped GaN nanowires (NWs) have been synthesized on (111)-oriented n + -silicon substrates by plasma-enhanced chemical vapor deposition. The scanning electron microscope images showed that the GaN NWs were bent at high Mg doping levels, and the transmission electron microscope characterization indicated that single-crystalline GaN NWs grew along < 0001 > orientation. As shown by energy dispersive spectroscopy, the Mg doping levels in GaN NWs increased with increasing partial pressure of magnesium nitride, which was employed as the dopant precursor for p-GaN NW growth. Photoluminescence measurements suggested the presence of both p- and n‐type GaN NWs. Furthermore, the GaN NWs with axial p–n junctions were aligned between either two-Ni or two-Al electrodes by applying alternating current voltages. The current–voltage characteristics have confirmed the formation of axial p–n junctions in GaN nanowires. - Highlights: ► Grow axially modulated GaN nanowires by plasma-enhanced chemical vapor deposition ► Control the Mg concentration of GaN nanowires by tuning Mg 3 N 2 temperature ► Align the GaN nanowires by applying alternating current voltages between electrodes

  6. Structural and photoluminescence investigation on the hot-wire assisted plasma enhanced chemical vapor deposition growth silicon nanowires

    International Nuclear Information System (INIS)

    Chong, Su Kong; Goh, Boon Tong; Wong, Yuen-Yee; Nguyen, Hong-Quan; Do, Hien; Ahmad, Ishaq; Aspanut, Zarina; Muhamad, Muhamad Rasat; Dee, Chang Fu; Rahman, Saadah Abdul

    2012-01-01

    High density of silicon nanowires (SiNWs) were synthesized by a hot-wire assisted plasma enhanced chemical vapor deposition technique. The structural and optical properties of the as-grown SiNWs prepared at different rf power of 40 and 80 W were analyzed in this study. The SiNWs prepared at rf power of 40 W exhibited highly crystalline structure with a high crystal volume fraction, X C of ∼82% and are surrounded by a thin layer of SiO x . The NWs show high absorption in the high energy region (E>1.8 eV) and strong photoluminescence at 1.73 to 2.05 eV (red–orange region) with a weak shoulder at 1.65 to 1.73 eV (near IR region). An increase in rf power to 80 W reduced the X C to ∼65% and led to the formation of nanocrystalline Si structures with a crystallite size of <4 nm within the SiNWs. These NWs are covered by a mixture of uncatalyzed amorphous Si layer. The SiNWs prepared at 80 W exhibited a high optical absorption ability above 99% in the broadband range between 220 and ∼1500 nm and red emission between 1.65 and 1.95 eV. The interesting light absorption and photoluminescence properties from both SiNWs are discussed in the text. - Highlights: ► Growth of random oriented silicon nanowires using hot-wire assisted plasma enhanced chemical vapor deposition. ► Increase in rf power reduces the crystallinity of silicon nanowires. ► High density and nanocrystalline structure in silicon nanowires significant enhance the near IR light absorption. ► Oxide defects and silicon nanocrystallites in silicon nanowires reveal photoluminescence in red–orange and red regions.

  7. Method of plasma enhanced chemical vapor deposition of diamond using methanol-based solutions

    Science.gov (United States)

    Tzeng, Yonhua (Inventor)

    2009-01-01

    Briefly described, methods of forming diamond are described. A representative method, among others, includes: providing a substrate in a reaction chamber in a non-magnetic-field microwave plasma system; introducing, in the absence of a gas stream, a liquid precursor substantially free of water and containing methanol and at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one, into an inlet of the reaction chamber; vaporizing the liquid precursor; and subjecting the vaporized precursor, in the absence of a carrier gas and in the absence in a reactive gas, to a plasma under conditions effective to disassociate the vaporized precursor and promote diamond growth on the substrate in a pressure range from about 70 to 130 Torr.

  8. Microwave-assisted Chemical Transformations

    Science.gov (United States)

    In recent years, there has been a considerable interest in developing sustainable chemistries utilizing green chemistry principles. Since the first published report in 1986 by Gedye and Giguere on microwave assisted synthesis in household microwave ovens, the use of microwaves as...

  9. Sensing performance of plasma-enhanced chemical vapor deposition SiC-SiO2-SiC horizontal slot waveguides

    NARCIS (Netherlands)

    Pandraud, G.; Margallo-Balbas, E.; Sarro, P.M.

    2012-01-01

    We have studied, for the first time, the sensing capabilities of plasma-enhanced chemical vapor deposition (PECVD) SiC-SiO2-SiC horizontal slot waveguides. Optical propagation losses were measured to be 23.9 dB?cm for the quasi-transverse magnetic mode. To assess the potential of this device as a

  10. Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Bollani, M; Fedorov, A; Chrastina, D; Sordan, R; Picco, A; Bonera, E

    2010-01-01

    Si 1-x Ge x islands grown on Si patterned substrates have received considerable attention during the last decade for potential applications in microelectronics and optoelectronics. In this work we propose a new methodology to grow Ge-rich islands using a chemical vapour deposition technique. Electron-beam lithography is used to pre-pattern Si substrates, creating material traps. Epitaxial deposition of thin Ge films by low-energy plasma-enhanced chemical vapour deposition then leads to the formation of Ge-rich Si 1-x Ge x islands (x > 0.8) with a homogeneous size distribution, precisely positioned with respect to the substrate pattern. The island morphology was characterized by atomic force microscopy, and the Ge content and strain in the islands was studied by μRaman spectroscopy. This characterization indicates a uniform distribution of islands with high Ge content and low strain: this suggests that the relatively high growth rate (0.1 nm s -1 ) and low temperature (650 deg. C) used is able to limit Si intermixing, while maintaining a long enough adatom diffusion length to prevent nucleation of islands outside pits. This offers the novel possibility of using these Ge-rich islands to induce strain in a Si cap.

  11. Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.

    Science.gov (United States)

    Bollani, M; Chrastina, D; Fedorov, A; Sordan, R; Picco, A; Bonera, E

    2010-11-26

    Si(1-x)Ge(x) islands grown on Si patterned substrates have received considerable attention during the last decade for potential applications in microelectronics and optoelectronics. In this work we propose a new methodology to grow Ge-rich islands using a chemical vapour deposition technique. Electron-beam lithography is used to pre-pattern Si substrates, creating material traps. Epitaxial deposition of thin Ge films by low-energy plasma-enhanced chemical vapour deposition then leads to the formation of Ge-rich Si(1-x)Ge(x) islands (x > 0.8) with a homogeneous size distribution, precisely positioned with respect to the substrate pattern. The island morphology was characterized by atomic force microscopy, and the Ge content and strain in the islands was studied by μRaman spectroscopy. This characterization indicates a uniform distribution of islands with high Ge content and low strain: this suggests that the relatively high growth rate (0.1 nm s(-1)) and low temperature (650 °C) used is able to limit Si intermixing, while maintaining a long enough adatom diffusion length to prevent nucleation of islands outside pits. This offers the novel possibility of using these Ge-rich islands to induce strain in a Si cap.

  12. Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

    2017-03-01

    Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

  13. Growth and characterization of stoichiometric BCN films on highly oriented pyrolytic graphite by radiofrequency plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mannan, Md. Abdul, E-mail: amannan75@yahoo.co [Department of Chemistry and Applied Chemistry, Faculty of Science and Engineering, Saga University, 1 Honjo, Saga 840-8502 (Japan); Synchrotron Radiation Research Unit, Quantum Beam Science Directorate, Japan Atomic Energy Agency, Tokai-mura, Naka-gun, Ibaraki 319-1195 (Japan); Noguchi, Hideyuki; Kida, Tetsuya; Nagano, Masamitsu [Department of Chemistry and Applied Chemistry, Faculty of Science and Engineering, Saga University, 1 Honjo, Saga 840-8502 (Japan); Hirao, Norie; Baba, Yuji [Synchrotron Radiation Research Unit, Quantum Beam Science Directorate, Japan Atomic Energy Agency, Tokai-mura, Naka-gun, Ibaraki 319-1195 (Japan)

    2010-05-31

    Hexagonal boron carbonitride (h-BCN) hybrid films have been synthesized on highly oriented pyrolytic graphite by radiofrequency plasma enhanced chemical vapor deposition using tris-(dimethylamino)borane as a single-source molecular precursor. The films were characterized by X-ray photoelectron spectroscopy (XPS), near-edge X-ray absorption fine structure (NEXAFS) and Raman spectroscopic measurements. XPS measurement showed that the B atoms were bonded to C and N atoms to form the sp{sup 2}-B-C-N atomic hybrid chemical environment. The atomic composition estimated from the XPS of the typical sample was found to be almost B{sub 1}C{sub 1}N{sub 1}. NEXAFS spectra of the B K-edge and the N K-edge had the peaks due to the {pi}* and {sigma}* resonances of sp{sup 2} hybrid orbitals implying the existence of the sp{sup 2} hybrid configurations of h-BCN around the B atoms. The G band at 1592 and D band at 1352 cm{sup -1} in the Raman spectra also suggested the presence of the graphite-like sp{sup 2}-B-C-N atomic hybrid bonds. The films consisted of micrometer scale crystalline structure of around 10 {mu}m thick has been confirmed by the field emission scanning electron microscopy.

  14. The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition

    Czech Academy of Sciences Publication Activity Database

    Červenka, Jiří; Ledinský, Martin; Stuchlík, Jiří; Stuchlíková, The-Ha; Bakardjieva, Snejana; Hruška, Karel; Fejfar, Antonín; Kočka, Jan

    2010-01-01

    Roč. 21, č. 41 (2010), 415604/1-415604/7 ISSN 0957-4484 R&D Projects: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510 EU Projects: European Commission(XE) 240826 - PolySiMode Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z40320502 Keywords : nanoneedles * nanowires * silicon * plasma * chemical vapor deposition * crystal structure * growth * phonon * SEM * Raman Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.644, year: 2010

  15. Controlled growth of carbon nanofibers using plasma enhanced chemical vapor deposition: Effect of catalyst thickness and gas ratio

    International Nuclear Information System (INIS)

    Saidin, M.A.R.; Ismail, A.F.; Sanip, S.M.; Goh, P.S.; Aziz, M.; Tanemura, M.

    2012-01-01

    The characteristics of carbon nanofibers (CNFs) grown, using direct current plasma enhanced chemical vapor deposition system reactor under various acetylene to ammonia gas ratios and different catalyst thicknesses were studied. Nickel/Chromium-glass (Ni/Cr-glass) thin film catalyst was employed for the growth of CNF. The grown CNFs were then characterized using Raman spectroscopy, field emission scanning electron microscopy and transmission electron microscopy (TEM). Raman spectroscopy showed that the Ni/Cr-glass with thickness of 15 nm and gas ratio acetylene to ammonia of 1:3 produced CNFs with the lowest I D /I G value (the relative intensity of D-band to G-band). This indicated that this catalyst thickness and gas ratio value is the optimum combination for the synthesis of CNFs under the conditions studied. TEM observation pointed out that the CNFs produced have 104 concentric walls and the residual catalyst particles were located inside the tubes of CNFs. It was also observed that structural morphology of the grown CNFs was influenced by acetylene to ammonia gas ratio and catalyst thickness.

  16. Controlled growth of carbon nanofibers using plasma enhanced chemical vapor deposition: Effect of catalyst thickness and gas ratio

    Energy Technology Data Exchange (ETDEWEB)

    Saidin, M.A.R. [Advanced Membrane Technology Research Centre (AMTEC), Universiti Teknologi Malaysia, 81310 Skudai, Johor Bahru (Malaysia); Ismail, A.F., E-mail: afauzi@utm.my [Advanced Membrane Technology Research Centre (AMTEC), Universiti Teknologi Malaysia, 81310 Skudai, Johor Bahru (Malaysia); Sanip, S.M.; Goh, P.S.; Aziz, M. [Advanced Membrane Technology Research Centre (AMTEC), Universiti Teknologi Malaysia, 81310 Skudai, Johor Bahru (Malaysia); Tanemura, M. [Department of Frontier Material, Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

    2012-01-31

    The characteristics of carbon nanofibers (CNFs) grown, using direct current plasma enhanced chemical vapor deposition system reactor under various acetylene to ammonia gas ratios and different catalyst thicknesses were studied. Nickel/Chromium-glass (Ni/Cr-glass) thin film catalyst was employed for the growth of CNF. The grown CNFs were then characterized using Raman spectroscopy, field emission scanning electron microscopy and transmission electron microscopy (TEM). Raman spectroscopy showed that the Ni/Cr-glass with thickness of 15 nm and gas ratio acetylene to ammonia of 1:3 produced CNFs with the lowest I{sub D}/I{sub G} value (the relative intensity of D-band to G-band). This indicated that this catalyst thickness and gas ratio value is the optimum combination for the synthesis of CNFs under the conditions studied. TEM observation pointed out that the CNFs produced have 104 concentric walls and the residual catalyst particles were located inside the tubes of CNFs. It was also observed that structural morphology of the grown CNFs was influenced by acetylene to ammonia gas ratio and catalyst thickness.

  17. Effects of Pretreatment on the Electronic Properties of Plasma Enhanced Chemical Vapor Deposition Hetero-Epitaxial Graphene Devices

    Science.gov (United States)

    Zhang, Lian-Chang; Shi, Zhi-Wen; Yang, Rong; Huang, Jian

    2014-09-01

    Quasi-monolayer graphene is successfully grown by the plasma enhanced chemical vapor deposition heteroepitaxial method we reported previously. To measure its electrical properties, the prepared graphene is fabricated into Hall ball shaped devices by the routine micro-fabrication method. However, impurity molecules adsorbed onto the graphene surface will impose considerable doping effects on the one-atom-thick film material. Our experiment demonstrates that pretreatment of the device by heat radiation baking and electrical annealing can dramatically influence the doping state of the graphene and consequently modify the electrical properties. While graphene in the as-fabricated device is highly p-doped, as confirmed by the position of the Dirac point at far more than +60 V, baking treatment at temperatures around 180°C can significantly lower the doping level and reduce the conductivity. The following electrical annealing is much more efficient to desorb the extrinsic molecules, as confirmed by the in situ measurement, and as a result, further modify the doping state and electrical properties of the graphene, causing a considerable drop of the conductivity and a shifting of Dirac point from beyond +60 V to 0 V.

  18. Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Oliveira, M. H.; Viana, G. A.; de Lima, M. M.; Cros, A.; Cantarero, A.; Marques, F. C.

    2010-12-01

    Hydrogenated amorphous carbon (a-C:H) films were prepared by plasma enhanced chemical vapor deposition using methane (CH4) plus krypton (Kr) mixed atmosphere. The depositions were performed as function of the bias voltage and krypton partial pressure. The goal of this work was to study the influence of krypton gas on the physical properties of a-C:H films deposited on the cathode electrode. Krypton concentration up to 1.6 at. %, determined by Rutherford Back-Scattering, was obtained at high Kr partial pressure and bias of -120 V. The structure of the films was analyzed by means of optical transmission spectroscopy, multi-wavelength Raman scattering and Fourier Transform Infrared spectroscopy. It was verified that the structure of the films remains unchanged up to a concentration of Kr of about 1.0 at. %. A slight graphitization of the films occurs for higher concentration. The observed variation in the film structure, optical band gap, stress, and hydrogen concentration were associated mainly with the subplantation process of hydrocarbons radicals, rather than the krypton ion energy.

  19. A simple method to deposit palladium doped SnO2 thin films using plasma enhanced chemical vapor deposition technique

    International Nuclear Information System (INIS)

    Kim, Young Soon; Wahab, Rizwan; Shin, Hyung-Shik; Ansari, S. G.; Ansari, Z. A.

    2010-01-01

    This work presents a simple method to deposit palladium doped tin oxide (SnO 2 ) thin films using modified plasma enhanced chemical vapor deposition as a function of deposition temperature at a radio frequency plasma power of 150 W. Stannic chloride (SnCl 4 ) was used as precursor and oxygen (O 2 , 100 SCCM) (SCCM denotes cubic centimeter per minute at STP) as reactant gas. Palladium hexafluroacetyleacetonate (Pd(C 5 HF 6 O 2 ) 2 ) was used as a precursor for palladium. Fine granular morphology was observed with tetragonal rutile structure. A peak related to Pd 2 Sn is observed, whose intensity increases slightly with deposition temperature. Electrical resistivity value decreased from 8.6 to 0.9 mΩ cm as a function of deposition temperature from 400 to 600 deg. C. Photoelectron peaks related to Sn 3d, Sn 3p3, Sn 4d, O 1s, and C 1s were detected with varying intensities as a function of deposition temperature.

  20. Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Oliveira, M. H. Jr.; Viana, G. A.; Marques, F. C.; Lima, M. M. Jr. de; Cros, A.; Cantarero, A.

    2010-01-01

    Hydrogenated amorphous carbon (a-C:H) films were prepared by plasma enhanced chemical vapor deposition using methane (CH 4 ) plus krypton (Kr) mixed atmosphere. The depositions were performed as function of the bias voltage and krypton partial pressure. The goal of this work was to study the influence of krypton gas on the physical properties of a-C:H films deposited on the cathode electrode. Krypton concentration up to 1.6 at. %, determined by Rutherford Back-Scattering, was obtained at high Kr partial pressure and bias of -120 V. The structure of the films was analyzed by means of optical transmission spectroscopy, multi-wavelength Raman scattering and Fourier Transform Infrared spectroscopy. It was verified that the structure of the films remains unchanged up to a concentration of Kr of about 1.0 at. %. A slight graphitization of the films occurs for higher concentration. The observed variation in the film structure, optical band gap, stress, and hydrogen concentration were associated mainly with the subplantation process of hydrocarbons radicals, rather than the krypton ion energy.

  1. Comparative Study of Furnace and Flash Lamp Annealed Silicon Thin Films Grown by Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Maheshwar Shrestha

    2018-03-01

    Full Text Available Low-temperature growth of microcrystalline silicon (mc-Si is attractive for many optoelectronic device applications. This paper reports a detailed comparison of optical properties, microstructure, and morphology of amorphous silicon (a-Si thin films crystallized by furnace annealing and flash lamp annealing (FLA at temperatures below the softening point of glass substrate. The initial a-Si films were grown by plasma enhanced chemical vapor deposition (PECVD. Reflectance measurement indicated characteristic peak in the UV region ~280 nm for the furnace annealed (>550 °C and flash lamp annealed films, which provided evidence of crystallization. The film surface roughness increased with increasing the annealing temperature as well as after the flash lamp annealing. X-ray diffraction (XRD measurement indicated that the as-deposited samples were purely amorphous and after furnace crystallization, the crystallites tended to align in one single direction (202 with uniform size that increased with the annealing temperature. On the other hand, the flash lamp crystalized films had randomly oriented crystallites with different sizes. Raman spectroscopy showed the crystalline volume fraction of 23.5%, 47.3%, and 61.3% for the samples annealed at 550 °C, 650 °C, and with flash lamp, respectively. The flash lamp annealed film was better crystallized with rougher surface compared to furnace annealed ones.

  2. Preparation of Hydrophobic Metal-Organic Frameworks via Plasma Enhanced Chemical Vapor Deposition of Perfluoroalkanes for the Removal of Ammonia

    Science.gov (United States)

    DeCoste, Jared B.; Peterson, Gregory W.

    2013-01-01

    Plasma enhanced chemical vapor deposition (PECVD) of perfluoroalkanes has long been studied for tuning the wetting properties of surfaces. For high surface area microporous materials, such as metal-organic frameworks (MOFs), unique challenges present themselves for PECVD treatments. Herein the protocol for development of a MOF that was previously unstable to humid conditions is presented. The protocol describes the synthesis of Cu-BTC (also known as HKUST-1), the treatment of Cu-BTC with PECVD of perfluoroalkanes, the aging of materials under humid conditions, and the subsequent ammonia microbreakthrough experiments on milligram quantities of microporous materials. Cu-BTC has an extremely high surface area (~1,800 m2/g) when compared to most materials or surfaces that have been previously treated by PECVD methods. Parameters such as chamber pressure and treatment time are extremely important to ensure the perfluoroalkane plasma penetrates to and reacts with the inner MOF surfaces. Furthermore, the protocol for ammonia microbreakthrough experiments set forth here can be utilized for a variety of test gases and microporous materials. PMID:24145623

  3. Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Liu, Donghua; Chen, Xiaosong; Hu, Yibin; Sun, Tai; Song, Zhibo; Zheng, Yujie; Cao, Yongbin; Cai, Zhi; Cao, Min; Peng, Lan; Huang, Yuli; Du, Lei; Yang, Wuli; Chen, Gang; Wei, Dapeng; Wee, Andrew Thye Shen; Wei, Dacheng

    2018-01-15

    Graphene is regarded as a potential surface-enhanced Raman spectroscopy (SERS) substrate. However, the application of graphene quantum dots (GQDs) has had limited success due to material quality. Here, we develop a quasi-equilibrium plasma-enhanced chemical vapor deposition method to produce high-quality ultra-clean GQDs with sizes down to 2 nm directly on SiO 2 /Si, which are used as SERS substrates. The enhancement factor, which depends on the GQD size, is higher than conventional graphene sheets with sensitivity down to 1 × 10 -9  mol L -1 rhodamine. This is attributed to the high-quality GQDs with atomically clean surfaces and large number of edges, as well as the enhanced charge transfer between molecules and GQDs with appropriate diameters due to the existence of Van Hove singularities in the electronic density of states. This work demonstrates a sensitive SERS substrate, and is valuable for applications of GQDs in graphene-based photonics and optoelectronics.

  4. Obtention of selective membranes for water and hydrophobic liquids by plasma enhanced chemical vapor deposition on porous substrates

    International Nuclear Information System (INIS)

    Bankovic, P.; Demarquette, N.R.; Silva, M.L.P. da

    2004-01-01

    In this work, the possibility of obtaining selective membranes for water and hydrophobic liquids by plasma enhanced chemical vapor deposition (PECVD) of hexamethyldisilazane (HMDS) or double layers of HMDS and n-hexane on porous substrates using a capacitive plasma reactor was investigated. The porous substrates used were paper filter, diatomite and polyester textiles. The films were characterized by X-ray photoelectron spectroscopy (XPS), attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and contact angle measurements. The membranes obtained were characterized by the Cobb test. Their efficiency to separate hydrocarbon compounds from water was evaluated through filtration experiments and Karl-Fischer titration tests. The reagents used in the filtration experiments were: chloroform, n-hexane, n-heptane, ethyl ether, benzene and diesel. XPS analysis showed that Si, N, C and O were present at the surface of the film. C peak was dominant in the double layer film spectra. C-H n , CH 2 , Si-H, Si-CH 3 , N-H, Si-CH 2 -Si, Si-N-Si and Si-C bonds were identified in both types of the films by ATR-FTIR. The relative intensities of the corresponding peaks in the two spectra were different. The XPS and FTIR results indicated that C was most likely present in a CH n form at the surface of double layer film. The average contact angles formed by drops of water on the film surface ranged from 135 deg. to 155 deg. . Water adsorption measured by Cobb test decreased from average values ranging from 300 to 9000 g m -2 (for nonmodified surfaces) to values ranging from 0 to 20 g m -2 (for treated surfaces). The Karl-Fischer titration indicated that between 90 and 1000 ppm (depending on the reagent used) of water remained in the hydrocarbon compound after filtration

  5. Spectroscopic properties of nitrogen doped hydrogenated amorphous carbon films grown by radio frequency plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Hayashi, Y.; Yu, G.; Rahman, M. M.; Krishna, K. M.; Soga, T.; Jimbo, T.; Umeno, M.

    2001-01-01

    Nitrogen doped hydrogenated amorphous carbon thin films have been deposited by rf plasma-enhanced chemical vapor deposition using CH 4 as the source of carbon and with different nitrogen flow rates (N 2 /CH 4 gas ratios between 0 and 3), at 300 K. The dependence modifications of the optical and the structural properties on nitrogen incorporation were investigated using different spectroscopic techniques, such as, Raman spectroscopy, Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy, ultraviolet-visible (UV-VIS) spectroscopy, electron spin resonance (ESR), photoluminescence (PL) and spectroscopic ellipsometry (SE). Raman spectroscopy and IR absorption reveal an increase in sp 2 -bonded carbon or a change in sp 2 domain size with increasing nitrogen flow rate. It is found that the configuration of nitrogen atoms incorporated into an amorphous carbon network gradually changes from nitrogen atoms surrounded by three (σ bonded) to two (π bonded) neighboring carbons with increasing nitrogen flow rate. Tauc optical gap is reduced from 2.6 to 2.0 eV, and the ESR spin density and the peak-to-peak linewidth increase sharply with increasing nitrogen flow rate. Excellent agreement has been found between the measured SE data and modeled spectra, in which an empirical dielectric function of amorphous materials and a linear void distribution along the thickness have been assumed. The influence of nitrogen on the electronic density of states is explained based on the optical properties measured by UV-VIS and PL including nitrogen lone pair band. [copyright] 2001 American Institute of Physics

  6. Microwave Plasma Enhanced Chemical Vapor Deposition of Diamond in Vapor of Methanol-Based Liquid Solutions

    National Research Council Canada - National Science Library

    Tzeng, Yonhua

    2000-01-01

    .... Liquid solutions are prepared by mixing methanol with other carbon containing liquid compounds which contain a greater than one ratio of carbon to oxygen such as acetone, ethanol, and iso-propanol...

  7. Experimental setup for producing tungsten coated graphite tiles using plasma enhanced chemical vapor deposition technique for fusion plasma applications

    International Nuclear Information System (INIS)

    Chauhan, Sachin Singh; Sharma, Uttam; Choudhary, K.K.; Sanyasi, A.K.; Ghosh, J.; Sharma, Jayshree

    2013-01-01

    Plasma wall interaction (PWI) in fusion grade machines puts stringent demands on the choice of materials in terms of high heat load handling capabilities and low sputtering yields. Choice of suitable material still remains a challenge and open topic of research for the PWI community. Carbon fibre composites (CFC), Beryllium (Be), and Tungsten (W) are now being considered as first runners for the first wall components of future fusion machines. Tungsten is considered to be one of the suitable materials for the job because of its superior properties than carbon like low physical sputtering yield and high sputter energy threshold, high melting point, fairly high re-crystallization temperature, low fuel retention capabilities, low chemical sputtering with hydrogen and its isotopes and most importantly the reparability with various plasma techniques both ex-situ and in-situ. Plasma assisted chemical vapour deposition is considered among various techniques as the most preferable technique for fabricating tungsten coated graphite tiles to be used as tokamak first wall and target components. These coated tiles are more favourable compared to pure tungsten due to their light weight and easier machining. A system has been designed, fabricated and installed at SVITS, Indore for producing tungsten coated graphite tiles using Plasma Enhanced Chemical Vapor Deposition (PE-CVD) technique for Fusion plasma applications. The system contains a vacuum chamber, a turbo-molecular pump, two electrodes, vacuum gauges, mass analyzer, mass flow controllers and a RF power supply for producing the plasma using hydrogen gas. The graphite tiles will be put on one of the electrodes and WF6 gas will be inserted in a controlled manner in the hydrogen plasma to achieve the tungsten-coating with WF6 dissociation. The system is integrated at SVITS, Indore and a vacuum of the order of 3*10 -6 is achieved and glow discharge plasma has been created to test all the sub-systems. The system design with

  8. Reduced chemical warfare agent sorption in polyurethane-painted surfaces via plasma-enhanced chemical vapor deposition of perfluoroalkanes.

    Science.gov (United States)

    Gordon, Wesley O; Peterson, Gregory W; Durke, Erin M

    2015-04-01

    Perfluoralkalation via plasma chemical vapor deposition has been used to improve hydrophobicity of surfaces. We have investigated this technique to improve the resistance of commercial polyurethane coatings to chemicals, such as chemical warfare agents. The reported results indicate the surface treatment minimizes the spread of agent droplets and the sorption of agent into the coating. The improvement in resistance is likely due to reduction of the coating's surface free energy via fluorine incorporation, but may also have contributing effects from surface morphology changes. The data indicates that plasma-based surface modifications may have utility in improving chemical resistance of commercial coatings.

  9. Low-temperature synthesis of diamond films by photoemission-assisted plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kawata, Mayuri, E-mail: kawata@mail.tagen.tohoku.ac.jp; Ojiro, Yoshihiro; Ogawa, Shuichi; Takakuwa, Yuji [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Masuzawa, Tomoaki; Okano, Ken [International Christian University, 3-10-2 Osawa, Mitaka 181-8585 (Japan)

    2014-03-15

    Photoemission-assisted plasma-enhanced chemical vapor deposition (PA-PECVD), a process in which photoelectrons emitted from a substrate irradiated with ultraviolet light are utilized as a trigger for DC discharge, was investigated in this study; specifically, the DC discharge characteristics of PA-PECVD were examined for an Si substrate deposited in advance through hot-filament chemical vapor deposition with a nitrogen-doped diamond layer of thickness ∼1 μm. Using a commercially available Xe excimer lamp (hν = 7.2 eV) to illuminate the diamond surface with and without hydrogen termination, the photocurrents were found to be 3.17 × 10{sup 12} and 2.11 × 10{sup 11} electrons/cm{sup 2}/s, respectively. The 15-fold increase in photocurrent was ascribed to negative electron affinity (NEA) caused by hydrogen termination on the diamond surfaces. The DC discharge characteristics revealed that a transition bias voltage from a Townsend-to-glow discharge was considerably decreased because of NEA (from 490 to 373 V for H{sub 2} gas and from 330 to 200 V for Ar gas), enabling a reduction in electric power consumption needed to synthesize diamond films through PA-PECVD. In fact, the authors have succeeded in growing high-quality diamond films of area 2.0 cm{sup 2} at 540 °C with a discharge power of only 1.8 W, plasma voltage of 156.4 V, and discharge current of 11.7 mA under the glow discharge of CH{sub 4}/H{sub 2}/Ar mixed gases. In addition to having only negligible amounts of graphite and amorphous carbon, the diamond films exhibit a relatively high diamond growth rate of 0.5 μm/h at temperatures as low as 540 °C, which is attributed to Ar{sup +} ions impinging on the diamond surface, and causing the removal of hydrogen atoms from the surface through sputtering. This process leads to enhanced CH{sub x} radical adsorption, because the sample was applied with a negative potential to accelerate photoelectrons in PA-PECVD.

  10. Ultralow k films by using a plasma-enhanced chemical vapor deposition porogen approach: Study of the precursor reaction mechanisms

    International Nuclear Information System (INIS)

    Castex, A.; Jousseaume, V.; Deval, J.; Bruat, J.; Favennec, L.; Passemard, G.

    2008-01-01

    As interconnects are scaled down, much effort is made to achieve ultralow k material with a dielectric constant lower than 2.5. Thus, many new precursors are investigated in plasma-enhanced chemical vapor deposition. This is particularly true with the porogen approach where two molecules are used: an organosilicon to create the silicon matrix and an organic molecule ''porogen'' that creates material porosity during a post-treatment such as annealing. In this article, the influence of the organosilicon molecular structure is investigated. Two ''matrix precursors'' with different structures are therefore compared. The first one, referred to as D5, has a ring structure (decamethyl pentacyclosiloxane); the second one, referred to as DEOMS, has a star structure (diethoxymethyl silane). The porogen organic molecule, referred to as CHO, is cyclohexen oxide. The fragmentation paths of the precursor molecules in the plasma are investigated by quadrupole mass spectroscopy and the film structure is studied by Fourier transform infrared spectroscopy. The mass spectroscopy analysis shows that the fragmentation in plasma is highest for DEOMS, intermediate for CHO, and lowest for D5 in comparable process conditions. At the maximum plasma power setting, the loss rate, which yields molecule consumption, is 43%-81% for the D5-CHO mixture, respectively, and 73%-37% for the DEOMS-CHO mixture, respectively. This is related to higher bond-dissociation energy for the siloxane (Si-O-Si) link in D5 than silane (Si-H), silylethoxyde (Si-OC 2 H 5 ) in DEOMS, or C-C and epoxy cycle in CHO. Indeed, a higher electron-energy relative threshold for dissociation under electron impact is measured for D5 (around 7 eV) than for DEOMS and CHO (around 4 eV). Moreover, the fragment structures differ from one precursor to another. Methyl groups are abstracted from D5 and a few polysiloxane chains are produced from pentacycle opening and fragmentation. In the case of DEOMS, many single silicon

  11. Effect of growth interruptions on TiO{sub 2} films deposited by plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, D., E-mail: dyli@yzu.edu.cn [College of Mechanical Engineering, Yangzhou University, Yangzhou, 225127 (China); Goullet, A. [Institut des Matériaux Jean Rouxel (IMN), UMR CNRS 6502, 2 rue de la Houssinière, 44322, Nantes (France); Carette, M. [Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré, 59652, Villeneuve d' Ascq (France); Granier, A. [Institut des Matériaux Jean Rouxel (IMN), UMR CNRS 6502, 2 rue de la Houssinière, 44322, Nantes (France); Landesman, J.P. [Institut de Physique de Rennes, UMR CNRS 6251, 263 av. Général Leclerc, 35042, Rennes (France)

    2016-10-01

    TiO{sub 2} films of ∼300 nm were deposited at low temperature (<140 °C) and pressure (0.4 Pa) using plasma enhanced chemical vapour deposition at the floating potential (V{sub f}) or the substrate self-bias voltage (V{sub b}) of −50 V. The impact of growth interruptions on the morphology, microstructure and optical properties of the films was investigated. The interruptions were carried out by stopping the plasma generation and gas injection once the increase of the layer thickness during each deposition step was about ∼100 nm. In one case of V{sub f}, the films of ∼300 nm exhibit a columnar morphology consisting of a bottom dense layer, an intermediate gradient layer and a top roughness layer. But the growth interruptions result in an increase of the dense layer thickness and a decrease of surface roughness. The film inhomogeneity has been identified by the in-situ real-time evolution of the kinetic ellipsometry (KE) parameters and the modeling process of spectroscopic ellipsometry (SE). The discrepancy of the refractive index measured by SE between bottom and upper layers can be reduced by growth interruptions. In the other case of V{sub b} = −50 V, the films exhibit a more compact arrangement which is homogeneous along the growth direction as confirmed by KE and SE. Both of Fourier transform infrared spectra and X-ray diffraction illustrate a phase transformation from anatase to rutile with the bias of −50 V, and also evidenced on the evolution of the refractive index dispersion curves. And a greatly increase of the refractive indice in the transparent range can be identified. However, the growth interruptions seem to have no influence on the morphology and optical properties in this case. - Highlights: • TiO{sub 2} films deposited by plasma processes at low temperature and pressure. • Influence of growth interruptions on structural and optical properties. • In-situ real-time ellipsometry measurements on film properties. • Structural and

  12. Microwave Technology--Applications in Chemical Synthesis

    Science.gov (United States)

    Microwave heating, being specific and instantaneous, is unique and has found a place for expeditious chemical syntheses. Specifically, the solvent-free reactions are convenient to perform and have advantages over the conventional heating protocols as summarized in the previous se...

  13. Chemical Modifications of Starch: Microwave Effect

    Directory of Open Access Journals (Sweden)

    Kamila Lewicka

    2015-01-01

    Full Text Available This paper presents basic methods of starch chemical modification, the effect of microwave radiation on the modification process, and the physicochemical properties of starch. It has been shown that the modifications contribute to improvement of the material performance and likewise to significant improvement of its mechanical properties. As a result, more and more extensive use of starch is possible in various industries. In addition, methods of oxidized starch and starch esters preparation are discussed. Properties of microwave radiation and its impact on starch (with particular regard to modifications described in literature are characterized.

  14. Synthesis of few-layer graphene on a Ni substrate by using DC plasma enhanced chemical vapor deposition (PE-CVD)

    International Nuclear Information System (INIS)

    Kim, Jeong Hyuk; Castro, Edward Joseph; Hwang, Yong Gyoo; Lee, Choong Hun

    2011-01-01

    In this work, few-layer graphene (FLG) was successfully grown on polycrystalline Ni a large scale by using DC plasma enhanced chemical vapor deposition (DC PE-CVD), which may serve as an alternative route in large-scale graphene synthesis. The synthesis time had an effect on the quality of the graphene produced. The applied DC voltage, on the other hand, influenced the minimization of the defect densities in the graphene grown. We also present a method of producing a free-standing polymethyl methacrylate (PMMA)/graphene membrane on a FeCl 3(aq) solution, which could then be transferred to the desired substrate.

  15. Microwaves in organic chemistry and organic chemical

    Directory of Open Access Journals (Sweden)

    Mijin Dušan Ž.

    2005-01-01

    Full Text Available The usual way of applying heat to a chemical reaction is the use of a Bunsen burner, an oil or some other type of bath, or an electric heater. In inorganic chemistry, microwave technology has been used since the late 1970s while it has been implemented in organic chemistry since the mid-1980s. Microwave heating has been used in the food industry for almost fifty years. The shorter reaction times and expanded reaction range that is offered by microwave technology are suited to the increased demands in industry. For example, there is a requirement in the pharmaceutical industry for a higher number of a novel chemical entities to be produced, which requires chemists to employ a number of resources to reduce time for the production of compounds. Also, microwaves are used in the food industry, as well as in the pyrolysis of waste materials, sample preparation, the solvent extraction of natural products and the hydrolysis of proteins and peptides.

  16. Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400 °C for through silicon via application

    International Nuclear Information System (INIS)

    Su, Meiying; Yu, Daquan; Liu, Yijun; Wan, Lixi; Song, Chongshen; Dai, Fengwei; Xue, Kai; Jing, Xiangmeng; Guidotti, Daniel

    2014-01-01

    The dielectric via liner of through silicon vias was deposited at 400 °C using a tetraethyl orthosilicate (TEOS)-based plasma enhanced chemical vapor deposition process in a via-middle integration scheme. The morphology, conformality and chemical compositions of the liner film were characterized using field emission scanning electron microscopy and Fourier Transform Infrared spectroscopy. The thermal properties and electrical performance of blanket TEOS films were investigated by high temperature film stress and mercury probe Capacitance–Voltage measurements. The TEOS SiO 2 films show good conformality, excellent densification, low thermal stress, high breakdown voltage and low current leakage. - Highlights: • Tetraethyl orthosilicate-based oxide films were deposited for packaging application. • The oxide films deposited plasma-enhanced chemical vapor deposition (PECVD) at 400 °C. • The PECVD oxide films exhibit good step coverage. • The 400 °C PECVD oxide films exhibit low thermal stress and current leakage. • The 400 °C PECVD oxide films show high breakdown voltage and acceptable permittivity

  17. Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400 °C for through silicon via application

    Energy Technology Data Exchange (ETDEWEB)

    Su, Meiying, E-mail: sumeiying@ime.ac.cn [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Yu, Daquan, E-mail: yudaquan@ime.ac.cn [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Jiangsu R and D Center for Internet of Things, Wuxi 214135 (China); Liu, Yijun [Piotech Co. Ltd, Shenyang 110179 (China); Wan, Lixi [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Song, Chongshen; Dai, Fengwei [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Xue, Kai [National Center for Advanced Packaging, Wuxi 214135 (China); Jing, Xiangmeng [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Guidotti, Daniel [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China)

    2014-01-01

    The dielectric via liner of through silicon vias was deposited at 400 °C using a tetraethyl orthosilicate (TEOS)-based plasma enhanced chemical vapor deposition process in a via-middle integration scheme. The morphology, conformality and chemical compositions of the liner film were characterized using field emission scanning electron microscopy and Fourier Transform Infrared spectroscopy. The thermal properties and electrical performance of blanket TEOS films were investigated by high temperature film stress and mercury probe Capacitance–Voltage measurements. The TEOS SiO{sub 2} films show good conformality, excellent densification, low thermal stress, high breakdown voltage and low current leakage. - Highlights: • Tetraethyl orthosilicate-based oxide films were deposited for packaging application. • The oxide films deposited plasma-enhanced chemical vapor deposition (PECVD) at 400 °C. • The PECVD oxide films exhibit good step coverage. • The 400 °C PECVD oxide films exhibit low thermal stress and current leakage. • The 400 °C PECVD oxide films show high breakdown voltage and acceptable permittivity.

  18. Chemical Modifications of Starch: Microwave Effect

    OpenAIRE

    Lewicka, Kamila; Siemion, Przemysław; Kurcok, Piotr

    2015-01-01

    This paper presents basic methods of starch chemical modification, the effect of microwave radiation on the modification process, and the physicochemical properties of starch. It has been shown that the modifications contribute to improvement of the material performance and likewise to significant improvement of its mechanical properties. As a result, more and more extensive use of starch is possible in various industries. In addition, methods of oxidized starch and starch esters preparation ...

  19. Effects of boron addition on a-Si90Ge10:H films obtained by low frequency plasma enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Perez, Arllene M; Renero, Francisco J; Zuniga, Carlos; Torres, Alfonso; Santiago, Cesar

    2005-01-01

    Optical, structural and electric properties of (a-(Si 90 Ge 10 ) 1-y B y :H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10 -3 to 10 1 Ω -1 cm -1 when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV

  20. Ge/Si (100) heterojunction photodiodes fabricated from material grown by low-energy plasma-enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Osmond, Johann; Isella, Giovanni; Chrastina, Daniel; Kaufmann, Rolf; Kaenel, Hans von

    2008-01-01

    We have fabricated a series of p-i-n Ge/Si heterojunction photodetectors with different thicknesses of the intrinsic Ge layer, different doping levels of the p and n layers and different diode diameters. Epitaxial Ge was deposited on Si(100) using low-energy plasma-enhanced CVD (LEPECVD) followed by cyclic annealing. Dark current values as low as 0.04 mA/cm 2 were achieved for 1 μm thick p-i-n photodiodes on lightly doped substrates at - 1 V bias, and external quantum efficiencies of 56% at 1.30 μm and 44% at 1.55 μm for 3 μm thick p + -i-n + photodiodes on highly doped substrates under 0.5 V reverse bias. For a 30 μm diameter diode a RC frequency of 21 GHz is obtained at a reverse bias of 1 V. With such characteristics, these diodes are attractive for telecommunication and optoelectronic applications

  1. Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Hamidinezhad, Habib; Wahab, Yussof; Othaman, Zulkafli; Ismail, Abd Khamim

    2011-01-01

    Silicon nanowires (SiNWs) were synthesized from pure silane precursor gas and Au nanoparticles catalyst at below Au-Si eutectic temperature. The SiNWs were grown onto Si (1 1 1) substrates using very high frequency plasma enhanced chemical vapor deposition via a vapor-solid-solid mechanism at temperatures ranging from 363 to 230 deg. C. The morphology of the synthesized SiNWs was characterized by means of field emission scanning electron microscope equipped with energy dispersive X-ray, high resolution transmission electron microscopy, X-ray diffraction technique and Raman spectroscope. Results demonstrated that the SiNWs can be grown at the temperature as low as 250 deg. C. In addition, it was revealed that the grown wires were silicon-crystallized.

  2. Effects of the gate dielectric on the subthreshold transport of carbon nanotube network transistors grown by using plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Jeong, Seung Geun; Park, Wan Jun

    2010-01-01

    In this study, we investigated the subthreshold slope of random network carbon nanotube transistors with different geometries and passivations. Single-wall carbon nanotubes with lengths of 1-2 m were grown by using plasma-enhanced chemical vapor deposition to form the transistor channels. A critical channel length, where the subthreshold slope was saturated, of 7 μm was obtained. This was due to the percolational behavior of the nanotube random networks. With the dielectric passivation, the subthreshold slope was dramatically reduced from 9 V/decade to 0.9 V/decade by reducing interfacial trap sites, which then reduced the interface capacitance between the nanotube network and the gate dielectric.

  3. Tensile test of a silicon microstructure fully coated with submicrometer-thick diamond like carbon film using plasma enhanced chemical vapor deposition method

    Science.gov (United States)

    Zhang, Wenlei; Uesugi, Akio; Hirai, Yoshikazu; Tsuchiya, Toshiyuki; Tabata, Osamu

    2017-06-01

    This paper reports the tensile properties of single-crystal silicon (SCS) microstructures fully coated with sub-micrometer thick diamond like carbon (DLC) film using plasma enhanced chemical vapor deposition (PECVD). To minimize the deformations or damages caused by non-uniform coating of DLC, which has high compression residual stress, released SCS specimens with the dimensions of 120 µm long, 4 µm wide, and 5 µm thick were coated from the top and bottom side simultaneously. The thickness of DLC coating is around 150 nm and three different bias voltages were used for deposition. The tensile strength improved from 13.4 to 53.5% with the increasing of negative bias voltage. In addition, the deviation in strength also reduced significantly compared to bare SCS sample.

  4. Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Romero, M F; Sanz, M M; Munoz, E [ISOM-Universidad Politecnica de Madrid (UPM). ETSIT, Madrid (Spain); Tanarro, I [Instituto de Estructura de la Materia, CSIC, Madrid (Spain); Jimenez, A, E-mail: itanarro@iem.cfmac.csic.e [Departamento Electronica, Escuela Politecnica Superior, Universidad de Alcala, Alcala de Henares, Madrid (Spain)

    2010-12-15

    In this work, silicon nitride thin films have been deposited by plasma enhanced chemical vapour deposition on both silicon samples and AlGaN/GaN high electron mobility transistors (HEMT) grown on sapphire substrates. Commercial parallel-plate RF plasma equipment has been used. During depositions, the dissociation rates of SiH{sub 4} and NH{sub 3} precursors and the formation of H{sub 2} and N{sub 2} have been analysed by mass spectrometry as a function of the NH{sub 3}/SiH{sub 4} flow ratio and the RF power applied to the plasma reactor. Afterwards, the properties of the films and the HEMT electrical characteristics have been studied. Plasma composition has been correlated with the SiN deposition rate, refractive index, H content and the final electric characteristics of the passivated transistors.

  5. Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

    Energy Technology Data Exchange (ETDEWEB)

    Ghrib, M., E-mail: mondherghrib@yahoo.fr [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Gaidi, M.; Ghrib, T.; Khedher, N. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Ben Salam, M. [L3M, Department of Physics, Faculty of Sciences of Bizerte, 7021 Zarzouna (Tunisia); Ezzaouia, H. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia)

    2011-08-15

    Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

  6. Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

    International Nuclear Information System (INIS)

    Ghrib, M.; Gaidi, M.; Ghrib, T.; Khedher, N.; Ben Salam, M.; Ezzaouia, H.

    2011-01-01

    Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

  7. Influence of Microwave Power on the Properties of Hydrogenated Diamond-Like Carbon Films Prepared by ECR Plasma Enhanced DC Magnetron Sputtering

    International Nuclear Information System (INIS)

    Ru Lili; Huang Jianjun; Gao Liang; Qi Bing

    2010-01-01

    Electron cyclotron resonance (ECR) plasma was applied to enhance the direct current magnetron sputtering to prepare hydrogenated diamond-like carbon (H-DLC) films. For different microwave powers, both argon and hydrogen gas are introduced separately as the ECR working gas to investigate the influence of microwave power on the microstructure and electrical property of the H-DLC films deposited on P-type silicon substrates. A series of characterization methods including the Raman spectrum and atomic force microscopy are used. Results show that, within a certain range, the increase in microwave power affects the properties of the thin films, namely the sp 3 ratio, the hardness, the nanoparticle size and the resistivity all increase while the roughness decreases with the increase in microwave power. The maximum of resistivity amounts to 1.1 x 10 9 Ω · cm. At the same time it is found that the influence of microwave power on the properties of H-DLC films is more pronounced when argon gas is applied as the ECR working gas, compared to hydrogen gas.

  8. Study on microwave assisted process in chemical extraction

    International Nuclear Information System (INIS)

    Amer Ali; Rosli Mohd Yunus; Ramlan Abd Aziz

    2001-01-01

    The microwave assisted process is a revolutionary method of extraction that reduces the extraction time to as little as a few seconds, with up to a ten-fold decrease in the use of solvents. The target material is immersed in solvent that is transparent to microwaves, so only the target material is heated, and because of the microwaves tend to heat the inside of the material quickly, the target chemical are expelled in a few seconds. benefits from this process include significant reductions in the amount of energy required and substantial reductions in the cost and dispose of hazardous solvents. A thorough review has been displayed on: using the microwave in extraction, applications of microwave in industry, process flow diagram, mechanism of the process and comparison between microwave process and other extraction techniques (soxhlet, steam distillation and supercritical fluid). This review attempts to summarize the studies about microwave assisted process as a very promising technique. (Author)

  9. Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wight, Daniel Nilsen

    2008-07-01

    Within this thesis, several important subjects related to the use of amorphous silicon nitride made by plasma enhanced chemical vapour deposition as an anti-reflective coating on silicon solar cells are presented. The first part of the thesis covers optical simulations to optimise single and double layer anti-reflective coatings with respect to optical performance when situated on a silicon solar cell. The second part investigates the relationship between important physical properties of silicon nitride films when deposited under different conditions. The optical simulations were either based on minimising the reflectance off a silicon nitride/silicon wafer stack or maximising the transmittance through the silicon nitride into the silicon wafer. The former method allowed consideration of the reflectance off the back surface of the wafer, which occurs typically at wavelengths above 1000 nm due to the transparency of silicon at these wavelengths. However, this method does not take into consideration the absorption occurring in the silicon nitride, which is negligible at low refractive indexes but quite significant when the refractive index increases above 2.1. For high-index silicon nitride films, the latter method is more accurate as it considers both reflectance and absorbance in the film to calculate the transmittance into the Si wafer. Both methods reach similar values for film thickness and refractive index for optimised single layer anti-reflective coatings, due to the negligible absorption occurring in these films. For double layer coatings, though, the reflectance based simulations overestimated the optimum refractive index for the bottom layer, which would have lead to excessive absorption if applied to real anti-reflective coatings. The experimental study on physical properties for silicon nitride films deposited under varying conditions concentrated on the estimation of properties important for its applications, such as optical properties, passivation

  10. The Surface Interface Characteristics of Vertically Aligned Carbon Nanotube and Graphitic Carbon Fiber Arrays Grown by Thermal and Plasma Enhanced Chemical Vapor Deposition

    Science.gov (United States)

    Delzeit, Lance; Nguyen, Cattien; Li, Jun; Han, Jie; Meyyappan, M.

    2002-01-01

    The development of nano-arrays for sensors and devices requires the growth of arrays with the proper characteristics. One such application is the growth of vertically aligned carbon nanotubes (CNTs) and graphitic carbon fibers (GCFs) for the chemical attachment of probe molecules. The effectiveness of such an array is dependent not only upon the effectiveness of the probe and the interface between that probe and the array, but also the array and the underlaying substrate. If that array is a growth of vertically aligned CNTs or GCFs then the attachment of that array to the surface is of the utmost importance. This attachment provides the mechanical stability and durability of the array, as well as, the electrical properties of that array. If the detection is to be acquired through an electrical measurement, then the appropriate resistance between the array and the surface need to be fabricated into the device. I will present data on CNTs and GCFs grown from both thermal and plasma enhanced chemical vapor deposition. The focus will be on the characteristics of the metal film from which the CNTs and GCFs are grown and the changes that occur due to changes within the growth process.

  11. Effects of boron addition on a-Si(90)Ge(10):H films obtained by low frequency plasma enhanced chemical vapour deposition.

    Science.gov (United States)

    Pérez, Arllene M; Renero, Francisco J; Zúñiga, Carlos; Torres, Alfonso; Santiago, César

    2005-06-29

    Optical, structural and electric properties of (a-(Si(90)Ge(10))(1-y)B(y):H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10(-3) to 10(1) Ω(-1) cm(-1) when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV.

  12. Formation and characterization of the MgO protecting layer deposited by plasma-enhanced metal-organic chemical-vapor deposition

    CERN Document Server

    Kang, M S; Byun, J C; Kim, D S; Choi, C K; Lee, J Y; Kim, K H

    1999-01-01

    MgO films were prepared on Si(100) and soda-lime glass substrates by using plasma-enhanced metal-organic chemical-vapor deposition. Various ratios of the O sub 2 /CH sub 3 MgO sup t Bu gas mixture and various gas flow rates were tested for the film fabrications. Highly (100)-oriented MgO films with good crystallinity were obtained with a 10 sccm CH sub 3 MgO sup t Bu flow without an O sub 2 gas flow. About 5 % carbon was contained in all the MgO films. The refractive index and the secondary electron emission coefficient for the best quality film were 1.43 and 0.45, respectively. The sputtering rate was about 0.2 nm/min for 10 sup 1 sup 1 cm sup - sup 3 Ar sup + ion density. Annealing at 500 .deg. C in an Ar ambient promoted the grain size without inducing a phase transition.

  13. Effects of thermal annealing on the structural, mechanical, and tribological properties of hard fluorinated carbon films deposited by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Maia da Costa, M. E. H.; Baumvol, I. J. R.; Radke, C.; Jacobsohn, L. G.; Zamora, R. R. M.; Freire, F. L.

    2004-11-01

    Hard amorphous fluorinated carbon films (a-C:F) deposited by plasma enhanced chemical vapor deposition were annealed in vacuum for 30 min in the temperature range of 200-600 °C. The structural and compositional modifications were followed by several analytical techniques: Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Nanoidentation measurements and lateral force microscopy experiments were carried out in order to provide the film hardness and the friction coefficient, respectively. The internal stress and contact angle were also measured. RBS, ERDA, and XPS results indicate that both fluorine and hydrogen losses occur for annealing temperatures higher than 300 °C. Raman spectroscopy shows a progressive graphitization upon annealing, while the surface became slightly more hydrophobic as revealed by the increase of the contact angle. Following the surface wettability reduction, a decrease of the friction coefficient was observed. These results highlight the influence of the capillary condensation on the nanoscale friction. The film hardness and the internal stress are constant up to 300 °C and decrease for higher annealing temperatures, showing a direct correlation with the atomic density of the films. Since the thickness variation is negligible, the mass loss upon thermal treatment results in amorphous structures with a lower degree of cross-linking, explaining the deterioration of the mechanical properties of the a-C:F films.

  14. Performance Improvement of Microcrystalline p-SiC/i-Si/n-Si Thin Film Solar Cells by Using Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Hsin-Ying Lee

    2014-01-01

    Full Text Available The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1 to 512 cm−1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD results, the microcrystalline i-Si films with (111, (220, and (311 diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2 to 18.16 mA/cm2 and from 6.89% to 8.58%, respectively.

  15. Metal/Carbon Hybrid Nanostructures Produced from Plasma-Enhanced Chemical Vapor Deposition over Nafion-Supported Electrochemically Deposited Cobalt Nanoparticles

    Directory of Open Access Journals (Sweden)

    Mohammad Islam

    2018-04-01

    Full Text Available In this work, we report development of hybrid nanostructures of metal nanoparticles (NP and carbon nanostructures with strong potential for catalysis, sensing, and energy applications. First, the etched silicon wafer substrates were passivated for subsequent electrochemical (EC processing through grafting of nitro phenyl groups using para-nitrobenzene diazonium (PNBT. The X-ray photoelectron spectroscope (XPS and atomic force microscope (AFM studies confirmed presence of few layers. Cobalt-based nanoparticles were produced over dip or spin coated Nafion films under different EC reduction conditions, namely CoSO4 salt concentration (0.1 M, 1 mM, reduction time (5, 20 s, and indirect or direct EC reduction route. Extensive AFM examination revealed NP formation with different attributes (size, distribution depending on electrochemistry conditions. While relatively large NP with >100 nm size and bimodal distribution were obtained after 20 s EC reduction in H3BO3 following Co2+ ion uptake, ultrafine NP (<10 nm could be produced from EC reduction in CoSO4 and H3BO3 mixed solution with some tendency to form oxides. Different carbon nanostructures including few-walled or multiwalled carbon nanotubes (CNT and carbon nanosheets were grown in a C2H2/NH3 plasma using the plasma-enhanced chemical vapor deposition technique. The devised processing routes enable size controlled synthesis of cobalt nanoparticles and metal/carbon hybrid nanostructures with unique microstructural features.

  16. Effect of oxygen plasma on field emission characteristics of single-wall carbon nanotubes grown by plasma enhanced chemical vapour deposition system

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Avshish; Parveen, Shama; Husain, Samina; Ali, Javid; Zulfequar, Mohammad [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Harsh [Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025 (India); Husain, Mushahid, E-mail: mush-reslab@rediffmail.com [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025 (India)

    2014-02-28

    Field emission properties of single wall carbon nanotubes (SWCNTs) grown on iron catalyst film by plasma enhanced chemical vapour deposition system were studied in diode configuration. The results were analysed in the framework of Fowler-Nordheim theory. The grown SWCNTs were found to be excellent field emitters, having emission current density higher than 20 mA/cm{sup 2} at a turn-on field of 1.3 V/μm. The as grown SWCNTs were further treated with Oxygen (O{sub 2}) plasma for 5 min and again field emission characteristics were measured. The O{sub 2} plasma treated SWCNTs have shown dramatic improvement in their field emission properties with emission current density of 111 mA/cm{sup 2} at a much lower turn on field of 0.8 V/μm. The as grown as well as plasma treated SWCNTs were also characterized by various techniques, such as scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy before and after O{sub 2} plasma treatment and the findings are being reported in this paper.

  17. Thermal expansion coefficient and thermomechanical properties of SiN(x) thin films prepared by plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Tien, Chuen-Lin; Lin, Tsai-Wei

    2012-10-20

    We present a new method based on fast Fourier transform (FFT) for evaluating the thermal expansion coefficient and thermomechanical properties of thin films. The silicon nitride thin films deposited on Corning glass and Si wafers were prepared by plasma-enhanced chemical vapor deposition in this study. The anisotropic residual stress and thermomechanical properties of silicon nitride thin films were studied. Residual stresses in thin films were measured by a modified Michelson interferometer associated with the FFT method under different heating temperatures. We found that the average residual-stress value increases when the temperature increases from room temperature to 100°C. Increased substrate temperature causes the residual stress in SiN(x) film deposited on Si wafers to be more compressive, but the residual stress in SiN(x) film on Corning glass becomes more tensile. The residual-stress versus substrate-temperature relation is a linear correlation after heating. A double substrate technique is used to determine the thermal expansion coefficients of the thin films. The experimental results show that the thermal expansion coefficient of the silicon nitride thin films is 3.27×10(-6)°C(-1). The biaxial modulus is 1125 GPa for SiN(x) film.

  18. Heteroepitaxial growth of Ba1 - xSrxTiO3/YBa2Cu3O7 - x by plasma-enhanced metalorganic chemical vapor deposition

    Science.gov (United States)

    Chern, C. S.; Liang, S.; Shi, Z. Q.; Yoon, S.; Safari, A.; Lu, P.; Kear, B. H.; Goodreau, B. H.; Marks, T. J.; Hou, S. Y.

    1994-06-01

    Epitaxial Ba1-xSrxTiO3(BST)/YBa2Cu3O7-x heterostructures with superior electrical and dielectric properties have been fabricated by plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD). Data of x-ray diffraction and high resolution transmission electron microscopy showed that oriented Ba1-xSrxTiO3 layers were epitaxially deposited on epitaxial (001) YBa2Cu3O7-x layers. The leakage current density through the Ba1-xSrxTiO3 films was about 10-7 A/cm2 at 2 V (about 2×105 V/cm) operation. Moreover, the results of capacitance-temperature measurements showed that the PE-MOCVD Ba1-xSrxTiO3 films had Curie temperatures of about 30 °C and a peak dielectric constant of 600 at zero bias voltage. The Rutherford backscattering spectrometry and x-ray diffraction results showed that the BST film composition was controlled between Ba0.75Sr0.25TiO3 and Ba0.8Sr0.2TiO3. The structural and electrical properties of the Ba1-xSrxTiO3/YBa2Cu3O7-x heterostructure indicated that conductive oxide materials with close lattice to Ba1-xSrxTiO3 can be good candidates for the bottom electrode.

  19. Characterization of Pb(Zr, Ti)O3 thin films fabricated by plasma enhanced chemical vapor deposition on Ir-based electrodes

    International Nuclear Information System (INIS)

    Lee, Hee-Chul; Lee, Won-Jong

    2002-01-01

    Structural and electrical characteristics of Pb(Zr, Ti)O 3 (PZT) ferroelectric thin films deposited on various Ir-based electrodes (Ir, IrO 2 , and Pt/IrO 2 ) using electron cyclotron resonance plasma enhanced chemical vapor deposition were investigated. On the Ir electrode, stoichiometric PZT films with pure perovskite phase could be obtained over a very wide range of processing conditions. However, PZT films prepared on the IrO 2 electrode contain a large amount of PbO x phases and exhibited high Pb-excess composition. The deposition characteristics were dependent on the behavior of PbO molecules on the electrode surface. The PZT thin film capacitors prepared on the Ir bottom electrode showed different electrical properties depending on top electrode materials. The PZT capacitors with Ir, IrO 2 , and Pt top electrodes showed good leakage current characteristics, whereas those with the Ru top electrode showed a very high leakage current density. The PZT capacitor exhibited the best fatigue endurance with an IrO 2 top electrode. An Ir top electrode provided better fatigue endurance than a Pt top electrode. The PZT capacitor with an Ir-based electrode is thought to be attractive for the application to ferroelectric random access memory devices because of its wide processing window for a high-quality ferroelectric film and good polarization, fatigue, and leakage current characteristics

  20. Polyethylene Oxide Films Polymerized by Radio Frequency Plasma-Enhanced Chemical Vapour Phase Deposition and Its Adsorption Behaviour of Platelet-Rich Plasma

    International Nuclear Information System (INIS)

    Wen-Juan, Hu; Fen-Yan, Xie; Qiang, Chen; Jing, Weng

    2008-01-01

    We present polyethylene oxide (PEO) functional films polymerized by rf plasma-enhanced vapour chemical deposition (rf-PECVD) on p-Si (100) surface with precursor ethylene glycol dimethyl ether (EGDME) and diluted Ar in pulsed plasma mode. The influences of discharge parameters on the film properties and compounds are investigated. The film structure is analysed by Fourier transform infrared (FTIR) spectroscopy. The water contact angle measurement and atomic force microscope (AFM) are employed to examine the surface polarity and to detect surface morphology, respectively. It is concluded that the smaller duty cycle in pulsed plasma mode contributes to the rich C-O-C (EO) group on the surfaces. As an application, the adsorption behaviour of platelet-rich plasma on plasma polymerization films performed in-vitro is explored. The shapes of attached cells are studied in detail by an optic invert microscope, which clarifies that high-density C-O-C groups on surfaces are responsible for non-fouling adsorption behaviour of the PEO films

  1. Polyethylene Oxide Films Polymerized by Radio Frequency Plasma-Enhanced Chemical Vapour Phase Deposition and Its Adsorption Behaviour of Platelet-Rich Plasma

    Science.gov (United States)

    Hu, Wen-Juan; Xie, Fen-Yan; Chen, Qiang; Weng, Jing

    2008-10-01

    We present polyethylene oxide (PEO) functional films polymerized by rf plasma-enhanced vapour chemical deposition (rf-PECVD) on p-Si (100) surface with precursor ethylene glycol dimethyl ether (EGDME) and diluted Ar in pulsed plasma mode. The influences of discharge parameters on the film properties and compounds are investigated. The film structure is analysed by Fourier transform infrared (FTIR) spectroscopy. The water contact angle measurement and atomic force microscope (AFM) are employed to examine the surface polarity and to detect surface morphology, respectively. It is concluded that the smaller duty cycle in pulsed plasma mode contributes to the rich C-O-C (EO) group on the surfaces. As an application, the adsorption behaviour of platelet-rich plasma on plasma polymerization films performed in-vitro is explored. The shapes of attached cells are studied in detail by an optic invert microscope, which clarifies that high-density C-O-C groups on surfaces are responsible for non-fouling adsorption behaviour of the PEO films.

  2. Effect of the hydrogen flow rate on the structural and optical properties of hydrogenated amorphous silicon thin films prepared by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ben Amor, Sana; Dimassi, Wissem; Ali Tebai, Mohamed; Ezzaouia, Hatem [Photovoltaic Laboratory Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia)

    2012-10-15

    Hydrogenated amorphous silicon (a-Si:H) thin films were deposited from pure silane (SiH{sub 4}) and hydrogen (H{sub 2}) gas mixture by plasma enhanced chemical vapor deposition (PECVD) method at low temperature (400 C) using high rf power (60 W). The structural and optical properties of these films are systematically investigated as a function of the flow rate of hydrogen (F{sub H2}).The surface morphology is analyzed by atomic force microscopy (AFM). The characterization of these films with low angle X-ray diffraction revealed that the crystallite size in the films tends to decrease with increase in (F{sub H2}). The Fourier transform infrared (FTIR) spectroscopic analysis showed that at low values of (F{sub H2}),the hydrogen bonding in Si:H films shifts from di-hydrogen (Si-H{sub 2}) and (Si-H{sub 2})n complexes to the mono-hydrogen (Si-H) bonding configuration. Finally, for these optimized conditions, the deposition rate decreases with increasing (F{sub H2}). (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Effect of Radio-Frequency and Low-Frequency Bias Voltage on the Formation of Amorphous Carbon Films Deposited by Plasma Enhanced Chemical Vapor Deposition

    International Nuclear Information System (INIS)

    Manis-Levy, Hadar; Mintz, Moshe H.; Livneh, Tsachi; Zukerman Ido; Raveh, Avi

    2014-01-01

    The effect of radio-frequency (RF) or low-frequency (LF) bias voltage on the formation of amorphous hydrogenated carbon (a-C:H) films was studied on silicon substrates with a low methane (CH 4 ) concentration (2–10 vol.%) in CH 4 +Ar mixtures. The bias substrate was applied either by RF (13.56 MHz) or by LF (150 kHz) power supply. The highest hardness values (∼18–22 GPa) with lower hydrogen content in the films (∼20 at.%) deposited at 10 vol.% CH 4 , was achieved by using the RF bias. However, the films deposited using the LF bias, under similar RF plasma generation power and CH 4 concentration (50 W and 10 vol.%, respectively), displayed lower hardness (∼6–12 GPa) with high hydrogen content (∼40 at.%). The structures analyzed by Fourier Transform Infrared (FTIR) and Raman scattering measurements provide an indication of trans-polyacetylene structure formation. However, its excessive formation in the films deposited by the LF bias method is consistent with its higher bonded hydrogen concentration and low level of hardness, as compared to the film prepared by the RF bias method. It was found that the effect of RF bias on the film structure and properties is stronger than the effect of the low-frequency (LF) bias under identical radio-frequency (RF) powered electrode and identical PECVD (plasma enhanced chemical vapor deposition) system configuration. (plasma technology)

  4. New fabrication technique using side-wall-type plasma-enhanced chemical-vapor deposition for a floating gate memory with a Si nanodot

    Energy Technology Data Exchange (ETDEWEB)

    Ichikawa, Kazunori; Punchaipetch, Prakaipetch; Yano, Hiroshi; Hatayama, Tomoaki; Uraoka, Yukiharu; Fuyuki, Takashi [Nara Institute of Science and Techonology, Ikoma, Nara (Japan); Tomyo, Atsushi; Takahashi, Eiji; Hayashi, Tsukasa; Ogata, Kiyoshi [Nissin Electric Co., Ltd., Kyoto (Japan)

    2006-08-15

    We have used side-wall-type plasma-enhanced chemical-vapor deposition (PECVD)to fabricate a floating gate memory using a Si nano-crystal dot on thermal SiO{sub 2} at a low temperature of 430 .deg. C. Atomic and radical hydrogen plays an important role in the low-temperature formation of the dot. Transmission electron microscopy (TEM) and atomic force microscopy (AFM) analyses revealed that the average dot size and density were approximately 5 nm and 8.5 X 10{sup 11} cm{sup -2}, respectively. The electronic properties were investigated with metal-oxide-semiconductor-field-effect transistors (MOSFETs) by embedding the nanocrystal dots into SiO{sub 2} fabricated using CVD. Electron charging and discharging were clearly confirmed at room temperature by the transient behavior of the capacitance and the transfer curve. The number of electrons confined in a single dot was approximately one. Furthermore, we evaluated the electronic behavior by varying the bias condition or the operating temperature. The critical charge density could be confirmed to be independent of the injection condition.

  5. Effect of nickel oxide seed layers on annealed-amorphous titanium oxide thin films prepared using plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Wu, Cheng-Yang; Hong, Shao-Chyang; Hwang, Fu-Tsai; Lai, Li-Wen; Lin, Tan-Wei; Liu, Day-Shan

    2011-01-01

    The effect of a nickel oxide (NiO x ) seed layer on the crystallization and photocatalytic activity of the sequentially plasma-enhanced chemical vapor deposited amorphous titanium oxide (TiO x ) thin film processed by a post-annealing process was investigated. The evolution of the crystalline structures, chemical bond configurations, and surface/cross-sectional morphologies of the annealed TiO x films, with and without a NiO x seed layer, was examined using X-ray diffractometer, Fourier transform infrared spectrometry, X-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscope measurements. Thermo- and photo-induced hydrophilicity was determined by measuring the contact angle of water droplet. Photocatalytic activity after UV light irradiation was evaluated from the decolorization of a methylene blue solution. The crystallization temperature of the TiO x film, deposited on a NiO x seed layer, was found to be lower than that of a pure TiO x film, further improving the thermo- and photo-induced surface super-hydrophilicity. The TiO x film deposited onto the NiO x seed layer, resulting in significant cluster boundaries, showed a rough surface morphology and proved to alleviate the anatase crystal growth by increasing the post-annealing temperature, which yielded a more active surface area and prohibited the recombination of photogenerated electrons and holes. The photocatalytic activity of the NiO x /TiO x system with such a textured surface therefore was enhanced and optimized through an adequate post-annealing process.

  6. Characteristics of SiOx-containing hard film prepared by low temperature plasma enhanced chemical vapor deposition using hexamethyldisilazane or vinyltrimethylsilane and post oxygen plasma treatment

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Yi-Syuan; Liu, Wan-Yu; Wu, Hsin-Ming [Department of Materials Engineering, Tatung University, Taipei, 104, Taiwan (China); Chen, Ko-Shao, E-mail: kschen@ttu.edu.tw [Department of Materials Engineering, Tatung University, Taipei, 104, Taiwan (China); Cech, Vladimir [Institute of Materials Chemistry, Brno University of Technology (Czech Republic)

    2017-03-01

    This study, monomers of hexamethyldisilazane (HMDSZ) and vinyltrimethylsilane (VTMS) were respectively used to deposit on the surface of polyethylene terephthalate (PET) substrate by plasma enhanced chemical vapor deposition. Oxygen plasma treatment follows the HMDSZ and VTMS deposition to produce a hydrophilic surface film on the deposited surface. Time for HMDSZ and VTMS plasma deposition was changed to investigate its influences on water contact angle, deposited film thickness, refractive index, and friction coefficient properties. The surface morphologies of the processed samples were observed by scanning electron microscope and their chemical compositions were measured by X-ray photoelectron spectroscopy. At 550 nm wavelength, the optical transmittance of PET after the HMDSZ treatment decreases from 89% to 83%, but increases from 89% to 95% for the VTMS treatment. With increase in HMDSZ and VTMS deposition times, the film thickness increases and the refractive index decreases. Result revealed by XPS, SiO{sub 2} film is formed on the sample surface after the O{sub 2} plasma treatment. The film adhesion capability by the HMDSZ+O{sub 2} and VTMS+O{sub 2} treatment was stronger than that by the HMDSZ and VTMS treatment only. The SiOx films produced by HMDSZ+O{sub 2} and VTMS+O{sub 2} treatment can increase the film hardness and improve light transmittance. - Highlights: • With increase in HMDSZ and VTMS deposition times, the film thickness increases and the refractive index decreases. • The optical transmittance of PET after the VTMS treatment increases from 89% to 95%. • The SiO{sub 2} films deposited by HMDSZ+O{sub 2} and VTMS+O{sub 2} plasma can increase the film hardness and improve light transmittance. • It is expected that they can be applied to the optical transmittance protective film on plastic substrate in the future.

  7. Silicon nitride films fabricated by a plasma-enhanced chemical vapor deposition method for coatings of the laser interferometer gravitational wave detector

    Science.gov (United States)

    Pan, Huang-Wei; Kuo, Ling-Chi; Huang, Shu-Yu; Wu, Meng-Yun; Juang, Yu-Hang; Lee, Chia-Wei; Chen, Hsin-Chieh; Wen, Ting Ting; Chao, Shiuh

    2018-01-01

    Silicon is a potential substrate material for the large-areal-size mirrors of the next-generation laser interferometer gravitational wave detector operated in cryogenics. Silicon nitride thin films uniformly deposited by a chemical vapor deposition method on large-size silicon wafers is a common practice in the silicon integrated circuit industry. We used plasma-enhanced chemical vapor deposition to deposit silicon nitride films on silicon and studied the physical properties of the films that are pertinent to application of mirror coatings for laser interferometer gravitational wave detectors. We measured and analyzed the structure, optical properties, stress, Young's modulus, and mechanical loss of the films, at both room and cryogenic temperatures. Optical extinction coefficients of the films were in the 10-5 range at 1550-nm wavelength. Room-temperature mechanical loss of the films varied in the range from low 10-4 to low 10-5 within the frequency range of interest. The existence of a cryogenic mechanical loss peak depended on the composition of the films. We measured the bond concentrations of N - H , Si - H , Si - N , and Si - Si bonds in the films and analyzed the correlations between bond concentrations and cryogenic mechanical losses. We proposed three possible two-level systems associated with the N - H , Si - H , and Si - N bonds in the film. We inferred that the dominant source of the cryogenic mechanical loss for the silicon nitride films is the two-level system of exchanging position between a H+ and electron lone pair associated with the N - H bond. Under our deposition conditions, superior properties in terms of high refractive index with a large adjustable range, low optical absorption, and low mechanical loss were achieved for films with lower nitrogen content and lower N - H bond concentration. Possible pairing of the silicon nitride films with other materials in the quarter-wave stack is discussed.

  8. Effect of nickel oxide seed layers on annealed-amorphous titanium oxide thin films prepared using plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Cheng-Yang; Hong, Shao-Chyang [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China); Hwang, Fu-Tsai [Department of Electro-Optical Engineering, National United University, Miao-Li, 36003, Taiwan (China); Lai, Li-Wen [ITRI South, Industrial Technology Research Institute, Liujia, Tainan, 73445, Taiwan (China); Lin, Tan-Wei [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China); Liu, Day-Shan, E-mail: dsliu@sunws.nfu.edu.tw [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China)

    2011-10-31

    The effect of a nickel oxide (NiO{sub x}) seed layer on the crystallization and photocatalytic activity of the sequentially plasma-enhanced chemical vapor deposited amorphous titanium oxide (TiO{sub x}) thin film processed by a post-annealing process was investigated. The evolution of the crystalline structures, chemical bond configurations, and surface/cross-sectional morphologies of the annealed TiO{sub x} films, with and without a NiO{sub x} seed layer, was examined using X-ray diffractometer, Fourier transform infrared spectrometry, X-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscope measurements. Thermo- and photo-induced hydrophilicity was determined by measuring the contact angle of water droplet. Photocatalytic activity after UV light irradiation was evaluated from the decolorization of a methylene blue solution. The crystallization temperature of the TiO{sub x} film, deposited on a NiO{sub x} seed layer, was found to be lower than that of a pure TiO{sub x} film, further improving the thermo- and photo-induced surface super-hydrophilicity. The TiO{sub x} film deposited onto the NiO{sub x} seed layer, resulting in significant cluster boundaries, showed a rough surface morphology and proved to alleviate the anatase crystal growth by increasing the post-annealing temperature, which yielded a more active surface area and prohibited the recombination of photogenerated electrons and holes. The photocatalytic activity of the NiO{sub x}/TiO{sub x} system with such a textured surface therefore was enhanced and optimized through an adequate post-annealing process.

  9. Optical, mechanical and surface properties of amorphous carbonaceous thin films obtained by plasma enhanced chemical vapor deposition and plasma immersion ion implantation and deposition

    Science.gov (United States)

    Turri, Rafael G.; Santos, Ricardo M.; Rangel, Elidiane C.; da Cruz, Nilson C.; Bortoleto, José R. R.; Dias da Silva, José H.; Antonio, César Augusto; Durrant, Steven F.

    2013-09-01

    Diverse amorphous hydrogenated carbon-based films (a-C:H, a-C:H:F, a-C:H:N, a-C:H:Cl and a-C:H:Si:O) were obtained by radiofrequency plasma enhanced chemical vapor deposition (PECVD) and plasma immersion ion implantation and deposition (PIIID). The same precursors were used in the production of each pair of each type of film, such as a-C:H, using both PECVD and PIIID. Optical properties, namely the refractive index, n, absorption coefficient, α, and optical gap, ETauc, of these films were obtained via transmission spectra in the ultraviolet-visible near-infrared range (wavelengths from 300 to 3300 nm). Film hardness, elastic modulus and stiffness were obtained as a function of depth using nano-indentation. Surface energy values were calculated from liquid drop contact angle data. Film roughness and morphology were assessed using atomic force microscopy (AFM). The PIIID films were usually thinner and possessed higher refractive indices than the PECVD films. Determined refractive indices are consistent with literature values for similar types of films. Values of ETauc were increased in the PIIID films compared to the PECVD films. An exception was the a-C:H:Si:O films, for which that obtained by PIIID was thicker and exhibited a decreased ETauc. The mechanical properties - hardness, elastic modulus and stiffness - of films produced by PECVD and PIIID generally present small differences. An interesting effect is the increase in the hardness of a-C:H:Cl films from 1.0 to 3.0 GPa when ion implantation is employed. Surface energy correlates well with surface roughness. The implanted films are usually smoother than those obtained by PECVD.

  10. Gas diffusion ultrabarriers on polymer substrates using Al2O3 atomic layer deposition and SiN plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Carcia, P. F.; McLean, R. S.; Groner, M. D.; Dameron, A. A.; George, S. M.

    2009-01-01

    Thin films grown by Al 2 O 3 atomic layer deposition (ALD) and SiN plasma-enhanced chemical vapor deposition (PECVD) have been tested as gas diffusion barriers either individually or as bilayers on polymer substrates. Single films of Al 2 O 3 ALD with thicknesses of ≥10 nm had a water vapor transmission rate (WVTR) of ≤5x10 -5 g/m 2 day at 38 deg. C/85% relative humidity (RH), as measured by the Ca test. This WVTR value was limited by H 2 O permeability through the epoxy seal, as determined by the Ca test for the glass lid control. In comparison, SiN PECVD films with a thickness of 100 nm had a WVTR of ∼7x10 -3 g/m 2 day at 38 deg. C/85% RH. Significant improvements resulted when the SiN PECVD film was coated with an Al 2 O 3 ALD film. An Al 2 O 3 ALD film with a thickness of only 5 nm on a SiN PECVD film with a thickness of 100 nm reduced the WVTR from ∼7x10 -3 to ≤5x10 -5 g/m 2 day at 38 deg. C/85% RH. The reduction in the permeability for Al 2 O 3 ALD on the SiN PECVD films was attributed to either Al 2 O 3 ALD sealing defects in the SiN PECVD film or improved nucleation of Al 2 O 3 ALD on SiN.

  11. Epitaxial growth of SrTiO3/YBa2Cu3O7 - x heterostructures by plasma-enhanced metalorganic chemical vapor deposition

    Science.gov (United States)

    Liang, S.; Chern, C. S.; Shi, Z. Q.; Lu, P.; Safari, A.; Lu, Y.; Kear, B. H.; Hou, S. Y.

    1994-06-01

    We report heteroepitaxial growth of SrTiO3 on YBa2Cu3O7-x/LaAlO3 substrates by plasma-enhanced metalorganic chemical vapor deposition. X-ray diffraction results indicated that SrTiO3 films were epitaxially grown on a (001) YBa2Cu3O7-x surface with [100] orientation perpendicular to the surface. The film composition, with Sr/Ti molar ratio in the range of 0.9 to 1.1, was determined by Rutherford backscattering spectrometry and energy dispersive spectroscopy. The thickness of the SrTiO3 films is 0.1-0.2 μm. The epitaxial growth was further evidenced by high-resolution transmission electron microscopy and selected area diffraction. Atomically abrupt SrTiO3/YBa2Cu3O7-x interface and epitaxial growth with [100]SrTiO3∥[001]YBa2Cu3O7-x were observed in this study. The superconducting transition temperature of the bottom YBa2Cu3O7-x layer, as measured by ac susceptometer, did not significantly degrade after the growth of overlayer SrTiO3. The capacitance-voltage measurements showed that the dielectric constant of the SrTiO3 films was as high as 315 at a signal frequency of 100 KHz. The leakage current density through the SrTiO3 films is about 1×10-6 A/cm2 at 2-V operation. Data analysis on the current-voltage characteristic indicated that the conduction process is related to bulk-limited Poole-Frenkel emission.

  12. Lipon thin films grown by plasma-enhanced metalorganic chemical vapor deposition in a N{sub 2}-H{sub 2}-Ar gas mixture

    Energy Technology Data Exchange (ETDEWEB)

    Meda, Lamartine, E-mail: LMeda@xula.edu [Department of Chemistry, Xavier University of Louisiana, 1 Drexel Drive, New Orleans, LA, 70125 (United States); Maxie, Eleston E. [Excellatron Solid State LLC, 263 Decatur Street, Atlanta, GA 30312 (United States)

    2012-01-01

    Lithium phosphorus oxynitride (Lipon) thin films have been deposited by a plasma-enhanced metalorganic chemical vapor deposition method. Lipon thin films were deposited on approximately 0.2 {mu}m thick Au-coated alumina substrates in a N{sub 2}-H{sub 2}-Ar plasma at 13.56 MHz, a power of 150 W, and at 180 Degree-Sign C using triethyl phosphate [(CH{sub 2}CH{sub 3}){sub 3}PO{sub 4}] and lithium tert-butoxide [(LiOC(CH{sub 3}){sub 3}] precursors. Lipon growth rates ranged from 10 to 42 nm/min and thicknesses varied from 1 to 2.5 {mu}m. X-ray powder diffraction showed that the films were amorphous, and X-ray photoelectron spectroscopy (XPS) revealed approximately 4 at.% N in the films. The ionic conductivity of Lipon was measured by electrochemical impedance spectroscopy to be approximately 1.02 {mu}S/cm, which is consistent with the ionic conductivity of Lipon deposited by radio frequency magnetron sputtering of Li{sub 3}PO{sub 4} targets in either mixed Ar-N{sub 2} or pure N{sub 2} atmosphere. Attempts to deposit Lipon in a N{sub 2}-O{sub 2}-Ar plasma resulted in the growth of Li{sub 3}PO{sub 4} thin films. The XPS analysis shows no C and N atom peaks. Due to the high impedance of these films, reliable conductivity measurements could not be obtained for films grown in N{sub 2}-O{sub 2}-Ar plasma.

  13. Optical, mechanical and surface properties of amorphous carbonaceous thin films obtained by plasma enhanced chemical vapor deposition and plasma immersion ion implantation and deposition

    International Nuclear Information System (INIS)

    Turri, Rafael G.; Santos, Ricardo M.; Rangel, Elidiane C.; Cruz, Nilson C. da; Bortoleto, José R.R.; Dias da Silva, José H.; Antonio, César Augusto; Durrant, Steven F.

    2013-01-01

    Diverse amorphous hydrogenated carbon-based films (a-C:H, a-C:H:F, a-C:H:N, a-C:H:Cl and a-C:H:Si:O) were obtained by radiofrequency plasma enhanced chemical vapor deposition (PECVD) and plasma immersion ion implantation and deposition (PIIID). The same precursors were used in the production of each pair of each type of film, such as a-C:H, using both PECVD and PIIID. Optical properties, namely the refractive index, n, absorption coefficient, α, and optical gap, E Tauc , of these films were obtained via transmission spectra in the ultraviolet–visible near-infrared range (wavelengths from 300 to 3300 nm). Film hardness, elastic modulus and stiffness were obtained as a function of depth using nano-indentation. Surface energy values were calculated from liquid drop contact angle data. Film roughness and morphology were assessed using atomic force microscopy (AFM). The PIIID films were usually thinner and possessed higher refractive indices than the PECVD films. Determined refractive indices are consistent with literature values for similar types of films. Values of E Tauc were increased in the PIIID films compared to the PECVD films. An exception was the a-C:H:Si:O films, for which that obtained by PIIID was thicker and exhibited a decreased E Tauc . The mechanical properties – hardness, elastic modulus and stiffness – of films produced by PECVD and PIIID generally present small differences. An interesting effect is the increase in the hardness of a-C:H:Cl films from 1.0 to 3.0 GPa when ion implantation is employed. Surface energy correlates well with surface roughness. The implanted films are usually smoother than those obtained by PECVD.

  14. Synhesis of carbon nanotubes by plasma-enhanced chemical vapor deposition in an atmospheric-pressure microwave torch

    Czech Academy of Sciences Publication Activity Database

    Zajíčková, L.; Jašek, O.; Eliáš, M.; Synek, P.; Lazar, L.; Schneeweiss, Oldřich; Hanzlíková, Renáta

    2010-01-01

    Roč. 82, č. 6 (2010), s. 1259-1272 ISSN 0033-4545 Institutional research plan: CEZ:AV0Z20410507; CEZ:AV0Z20650511 Keywords : carbon * nanotubes * synthesis Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 2.128, year: 2010

  15. Microwave plasma emerging technologies for chemical processes

    NARCIS (Netherlands)

    de la Fuente, Javier F.; Kiss, Anton A.; Radoiu, Marilena T.; Stefanidis, Georgios D.

    2017-01-01

    Microwave plasma (MWP) technology is currently being used in application fields such as semiconductor and material processing, diamond film deposition and waste remediation. Specific advantages of the technology include the enablement of a high energy density source and a highly reactive medium,

  16. A comparative study of nitrogen plasma effect on field emission characteristics of single wall carbon nanotubes synthesized by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Avshish; Parveen, Shama; Husain, Samina; Ali, Javid [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Zulfequar, Mohammad [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Harsh [Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Husain, Mushahid, E-mail: mush_reslab@rediffmail.com [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (A Central University), New Delhi 110025 (India)

    2014-12-15

    Highlights: • Vertically aligned single wall carbon nanotubes (SWCNTs) have been successfully grown on nickel (Ni) deposited silicon substrate. • The diameter distribution of the grown (SWCNTs) is in the range 1–2 nm. • A current density of 25.0 mA/cm{sup 2} at 1.9 V/μm of the grown SWCNTs is observed with a high turn-on field (E{sub to}) of 1.3 V/μm. • After N{sub 2} nitrogen plasma treatment, huge current density of 81.5 mA/cm{sup 2} at 2.0 V/μm was recorded with low E{sub to} of 1.2 V/μm. • The comparison of these two typical results indicates a drastic enhancement in the field emission properties after plasma treatments. - Abstract: Vertically aligned single wall carbon nanotubes (SWCNTs) with large scale control of diameter, length and alignment have successfully been grown by plasma enhanced chemical vapor deposition (PECVD) system. The nickel (Ni) as catalyst deposited on silicon (Si) substrate was used to grow the SWCNTs. Field emission (FE) characteristics of the as grown SWCNTs were measured using indigenously designed setup in which a diode is configured in such a way that by applying negative voltage on the copper plate (cathode) with respect to stainless steel anode plate, current density can be recorded. To measure the FE characteristics, SWCNTs film pasted on the copper plate with silver epoxy was used as electron emitter source. The effective area of anode was ∼78.5 mm{sup 2} for field emission measurements. The emission measurements were carried out under high vacuum pressure of the order of 10{sup −6} Torr to minimize the electron scattering and degradation of the emitters. The distance between anode and cathode was kept 500 μm (constant) during entire field emission studies. The grown SWCNTs are excellent field emitters, having emission current density higher than 25 mA/cm{sup 2} at turn-on field 1.3 V/μm. In order to enhance the field emission characteristics, the as grown SWCNTs have been treated under nitrogen (N{sub 2

  17. Effects of gas residence time of CH4/H2 on sp2 fraction of amorphous carbon films and dissociated methyl density during radical-injection plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Sugiura, Hirotsugu; Jia, Lingyun; Kondo, Hiroki; Ishikawa, Kenji; Tsutsumi, Takayoshi; Hayashi, Toshio; Takeda, Keigo; Sekine, Makoto; Hori, Masaru

    2018-06-01

    Quadruple mass spectrometric measurements of CH3 density during radical-injection plasma-enhanced chemical vapor deposition to consider the sp2 fraction of amorphous carbon (a-C) films were performed. The sp2 fraction of the a-C films reached a minimum of 46%, where the CH3 density was maximum for a residence time of 6 ms. The sp2 fraction of the a-C films was tailored with the gaseous phase CH3 density during the deposition. This knowledge is useful for understanding the formation mechanism of bonding structures in the a-C films, which enables the precise control of their electronic properties.

  18. Metal-boride phase formation on tungsten carbide (WC-Co) during microwave plasma chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Johnston, Jamin M.; Catledge, Shane A., E-mail: catledge@uab.edu

    2016-02-28

    Graphical abstract: - Highlights: • A detailed phase analysis after PECVD boriding shows WCoB, CoB and/or W{sub 2}CoB{sub 2}. • EDS of PECVD borides shows boron diffusion into the carbide grain structure. • Nanoindentation hardness and modulus of borides is 23–27 GPa and 600–780 GPa. • Scratch testing shows hard coating with cracking at 40N and spallation at 70N. - Abstract: Strengthening of cemented tungsten carbide by boriding is used to improve the wear resistance and lifetime of carbide tools; however, many conventional boriding techniques render the bulk carbide too brittle for extreme conditions, such as hard rock drilling. This research explored the variation in metal-boride phase formation during the microwave plasma enhanced chemical vapor deposition process at surface temperatures from 700 to 1100 °C. We showed several well-adhered metal-boride surface layers consisting of WCoB, CoB and/or W{sub 2}CoB{sub 2} with average hardness from 23 to 27 GPa and average elastic modulus of 600–730 GPa. The metal-boride interlayer was shown to be an effective diffusion barrier against elemental cobalt; migration of elemental cobalt to the surface of the interlayer was significantly reduced. A combination of glancing angle X-ray diffraction, electron dispersive spectroscopy, nanoindentation and scratch testing was used to evaluate the surface composition and material properties. An evaluation of the material properties shows that plasma enhanced chemical vapor deposited borides formed at substrate temperatures of 800 °C, 850 °C, 900 °C and 1000 °C strengthen the material by increasing the hardness and elastic modulus of cemented tungsten carbide. Additionally, these boride surface layers may offer potential for adhesion of ultra-hard carbon coatings.

  19. Metal-boride phase formation on tungsten carbide (WC-Co) during microwave plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Johnston, Jamin M.; Catledge, Shane A.

    2016-01-01

    Graphical abstract: - Highlights: • A detailed phase analysis after PECVD boriding shows WCoB, CoB and/or W_2CoB_2. • EDS of PECVD borides shows boron diffusion into the carbide grain structure. • Nanoindentation hardness and modulus of borides is 23–27 GPa and 600–780 GPa. • Scratch testing shows hard coating with cracking at 40N and spallation at 70N. - Abstract: Strengthening of cemented tungsten carbide by boriding is used to improve the wear resistance and lifetime of carbide tools; however, many conventional boriding techniques render the bulk carbide too brittle for extreme conditions, such as hard rock drilling. This research explored the variation in metal-boride phase formation during the microwave plasma enhanced chemical vapor deposition process at surface temperatures from 700 to 1100 °C. We showed several well-adhered metal-boride surface layers consisting of WCoB, CoB and/or W_2CoB_2 with average hardness from 23 to 27 GPa and average elastic modulus of 600–730 GPa. The metal-boride interlayer was shown to be an effective diffusion barrier against elemental cobalt; migration of elemental cobalt to the surface of the interlayer was significantly reduced. A combination of glancing angle X-ray diffraction, electron dispersive spectroscopy, nanoindentation and scratch testing was used to evaluate the surface composition and material properties. An evaluation of the material properties shows that plasma enhanced chemical vapor deposited borides formed at substrate temperatures of 800 °C, 850 °C, 900 °C and 1000 °C strengthen the material by increasing the hardness and elastic modulus of cemented tungsten carbide. Additionally, these boride surface layers may offer potential for adhesion of ultra-hard carbon coatings.

  20. The Performance Improvement of N2 Plasma Treatment on ZrO2 Gate Dielectric Thin-Film Transistors with Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition IGZO Channel.

    Science.gov (United States)

    Wu, Chien-Hung; Huang, Bo-Wen; Chang, Kow-Ming; Wang, Shui-Jinn; Lin, Jian-Hong; Hsu, Jui-Mei

    2016-06-01

    The aim of this paper is to illustrate the N2 plasma treatment for high-κ ZrO2 gate dielectric stack (30 nm) with indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). Experimental results reveal that a suitable incorporation of nitrogen atoms could enhance the device performance by eliminating the oxygen vacancies and provide an amorphous surface with better surface roughness. With N2 plasma treated ZrO2 gate, IGZO channel is fabricated by atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique. The best performance of the AP-PECVD IGZO TFTs are obtained with 20 W-90 sec N2 plasma treatment with field-effect mobility (μ(FET)) of 22.5 cm2/V-s, subthreshold swing (SS) of 155 mV/dec, and on/off current ratio (I(on)/I(off)) of 1.49 x 10(7).

  1. Using KrF ELA to Improve Gate-Stacked LaAlO₃/ZrO₂ Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique.

    Science.gov (United States)

    Wu, Chien-Hung; Chang, Kow-Ming; Chen, Yi-Ming; Huang, Bo-Wen; Zhang, Yu-Xin; Wang, Shui-Jinn

    2018-03-01

    Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique and KrF excimer laser annealing (ELA) were employed for the fabrication of indium gallium zinc oxide thin-film transistors (IGZO-TFTs). Device with a 150 mJ/cm2 laser annealing densities demonstrated excellent electrical characteristics with improved on/off current ratio of 4.7×107, high channel mobility of 10 cm2/V-s, and low subthreshold swing of 0.15 V/dec. The improvements are attributed to the adjustment of oxygen vacancies in the IGZO channel to an appropriate range of around 28.3% and the reduction of traps at the high-k/IGZO interface.

  2. Long-term stable water vapor permeation barrier properties of SiN/SiCN/SiN nanolaminated multilayers grown by plasma-enhanced chemical vapor deposition at extremely low pressures

    International Nuclear Information System (INIS)

    Choi, Bum Ho; Lee, Jong Ho

    2014-01-01

    We investigated the water vapor permeation barrier properties of 30-nm-thick SiN/SiCN/SiN nanolaminated multilayer structures grown by plasma enhanced chemical vapor deposition at 7 mTorr. The derived water vapor transmission rate was 1.12 × 10 −6 g/(m 2 day) at 85 °C and 85% relative humidity, and this value was maintained up to 15 000 h of aging time. The X-ray diffraction patterns revealed that the nanolaminated film was composed of an amorphous phase. A mixed phase was observed upon performing high resolution transmission electron microscope analysis, which indicated that a thermodynamically stable structure was formed. It was revealed amorphous SiN/SiCN/SiN multilayer structures that are free from intermixed interface defects effectively block water vapor permeation into active layer

  3. Rapid synthesis of tantalum oxide dielectric films by microwave microwave-assisted atmospheric chemical vapor deposition

    International Nuclear Information System (INIS)

    Ndiege, Nicholas; Subramanian, Vaidyanathan; Shannon, Mark A.; Masel, Richard I.

    2008-01-01

    Microwave-assisted chemical vapor deposition has been used to generate high quality, high-k dielectric films on silicon at high deposition rates with film thicknesses varying from 50 nm to 110 μm using inexpensive equipment. Characterization of the post deposition products was performed by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Raman spectroscopy. Film growth was determined to occur via rapid formation and accumulation of tantalum oxide clusters from tantalum (v) ethoxide (Ta(OC 2 H 5 ) 5 ) vapor on the deposition surface

  4. Novel edible oil sources: Microwave heating and chemical properties.

    Science.gov (United States)

    Hashemi, Seyed Mohammad Bagher; Mousavi Khaneghah, Amin; Koubaa, Mohamed; Lopez-Cervantes, Jaime; Yousefabad, Seyed Hossein Asadi; Hosseini, Seyedeh Fatemeh; Karimi, Masoumeh; Motazedian, Azam; Asadifard, Samira

    2017-02-01

    The aim of this work was to investigate the effect of various microwave heating times (1, 3, 5, 10, and 15min) on the chemical properties of novel edible oil sources, including Mashhadi melon (Cucumis melo var. Iranians cv. Mashhadi), Iranian watermelon (Citrullus lanatus cv. Fire Fon), pumpkin (Cucurbita pepo subsp. pepo var. Styriaca), and yellow apple (Malus domestica cv. Golden Delicious) seed oils. The evaluated parameters were peroxide value (PV), conjugated diene (CD) and triene (CT) values, carbonyl value (CV), p-anisidine value (AnV), oil stability index (OSI), radical scavenging activity (RSA), total tocopherols, total phenolics, as well as chlorophyll and carotenoid contents. Results showed that extended microwave heating involves decreased quality of the seed oils, mainly due to the formation of primary and secondary oxidation products. Microwave heating time also affects the total contents of chlorophylls, carotenoids, phenolics and tocopherols, which clearly decrease by increasing the exposure time. The order of oxidative stability of the analyzed edible oils was pumpkin>Mashhadi melon>Iranian watermelon>yellow apple. The obtained results demonstrated the promising potential of these novel edible oils for different food applications. Copyright © 2016 Elsevier Ltd. All rights reserved.

  5. Thermo-Chemical Conversion of Microwave Activated Biomass Mixtures

    Science.gov (United States)

    Barmina, I.; Kolmickovs, A.; Valdmanis, R.; Vostrikovs, S.; Zake, M.

    2018-05-01

    Thermo-chemical conversion of microwave activated wheat straw mixtures with wood or peat pellets is studied experimentally with the aim to provide more effective application of wheat straw for heat energy production. Microwave pre-processing of straw pellets is used to provide a partial decomposition of the main constituents of straw and to activate the thermo-chemical conversion of wheat straw mixtures with wood or peat pellets. The experimental study includes complex measurements of the elemental composition of biomass pellets (wheat straw, wood, peat), DTG analysis of their thermal degradation, FTIR analysis of the composition of combustible volatiles entering the combustor, the flame temperature, the heat output of the device and composition of the products by comparing these characteristics for mixtures with unprocessed and mw pre-treated straw pellets. The results of experimental study confirm that mw pre-processing of straw activates the thermal decomposition of mixtures providing enhanced formation of combustible volatiles. This leads to improvement of the combustion conditions in the flame reaction zone, completing thus the combustion of volatiles, increasing the flame temperature, the heat output from the device, the produced heat energy per mass of burned mixture and decreasing at the same time the mass fraction of unburned volatiles in the products.

  6. Nitrogen-doped graphene by microwave plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Kumar, A.; Voevodin, A.A.; Paul, R.; Altfeder, I.; Zemlyanov, D.; Zakharov, D.N.; Fisher, T.S.

    2013-01-01

    Rapid synthesis of nitrogen-doped, few-layer graphene films on Cu foil is achieved by microwave plasma chemical vapor deposition. The films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to 2 at.% are observed, and the limit is linked to the rigidity of graphene films on copper surfaces that impedes further nitrogen substitutions of carbon atoms. The entire growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films. - Highlights: ► Rapid synthesis of nitrogen doped few layer graphene on Cu foil. ► Defect density increment on 2% nitrogen doping. ► Nitrogen doped graphene is a good protection to the copper metallic surface

  7. Nitrogen-doped graphene by microwave plasma chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, A., E-mail: kumar50@purdue.edu [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Voevodin, A.A. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States); Paul, R. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Altfeder, I. [Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States); Zemlyanov, D.; Zakharov, D.N. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Fisher, T.S., E-mail: tsfisher@purdue.edu [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States)

    2013-01-01

    Rapid synthesis of nitrogen-doped, few-layer graphene films on Cu foil is achieved by microwave plasma chemical vapor deposition. The films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to 2 at.% are observed, and the limit is linked to the rigidity of graphene films on copper surfaces that impedes further nitrogen substitutions of carbon atoms. The entire growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films. - Highlights: ► Rapid synthesis of nitrogen doped few layer graphene on Cu foil. ► Defect density increment on 2% nitrogen doping. ► Nitrogen doped graphene is a good protection to the copper metallic surface.

  8. The effect of microwave pretreatment on chemical looping gasification of microalgae for syngas production

    International Nuclear Information System (INIS)

    Hu, Zhifeng; Ma, Xiaoqian; Jiang, Enchen

    2017-01-01

    Highlights: • Microwave pretreatment is beneficial to chemical-looping gasification reaction. • Gasification efficiency and gas yield increased greatly under microwave pretreatment. • 60 s is the optimal microwave pretreatment time in CLG to produce syngas. • Suitable microwave pretreatment can make the structure of solid residue become loose. • 750 W is the optimal microwave pretreatment power in CLG to produce syngas. - Abstract: Chemical-looping gasification (CLG) of Chlorella vulgaris was carried out in a quartz tube reactor under different microwave pretreatment. The product fractional yields, conversion efficiency and analysis of performance parameters were analyzed in order to obtain the characterization and optimal conditions of microwave pretreatment for syngas production. The results indicate that microwave pretreatment is conducive to CLG reaction. Furthermore, the higher power or the longer time in the process of microwave pretreatment could not exhibit a better effect on CLG. In addition, 750 W and 60 s is the optimal microwave pretreatment power and time respectively to obtain a great reducibility of oxygen carrier, high conversion efficiency, high products yield and good LHV. The H_2 yield, LHV, gasification efficiency and gas yield increased obviously from 18.12%, 12.14 MJ/Nm"3, 59.76% and 1.04 Nm"3/kg of untreated Chlorella vulgaris to 24.55%, 13.13 MJ/Nm"3, 72.16% and 1.16 Nm"3/kg of the optimal microwave pretreatment condition, respectively.

  9. Diamond growth on Fe-Cr-Al alloy by H2-plasma enhanced graphite etching

    International Nuclear Information System (INIS)

    Li, Y. S.; Hirose, A.

    2007-01-01

    Without intermediate layer and surface pretreatment, adherent diamond films with high initial nucleation density have been deposited on Fe-15Cr-5Al (wt. %) alloy substrate. The deposition was performed using microwave hydrogen plasma enhanced graphite etching in a wide temperature range from 370 to 740 degree sign C. The high nucleation density and growth rate of diamond are primarily attributed to the unique precursors used (hydrogen plasma etched graphite) and the chemical nature of the substrate. The improvement in diamond adhesion to steel alloys is ascribed to the important role played by Al, mitigation of the catalytic function of iron by suppressing the preferential formation of loose graphite intermediate phase on steel surface

  10. Simulation and Experimental Study of Photogeneration and Recombination in Amorphous-Like Silicon Thin Films Deposited by 27.12 MHz Plasma-Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Chia-Hsun Hsu

    2013-01-01

    Full Text Available Amorphous-like silicon (a-Si:H-like thin films are prepared by 27.12 MHz plasma-enhanced chemical vapor deposition technique. The films are applied to p-i-n single junction thin film solar cells with varying i-layer thickness to observe the effects on the short-circuit current density, as well as the open-circuit voltage, fill factor, and conversion efficiency. The most significant experimental result is that Jsc has two different behaviors with increasing the i-layer thickness, which can be related to carrier collection efficiency in the long wavelength region. Furthermore, technology computer-aided design simulation software is used to gain better insight into carrier generation and recombination of the solar cells, showing that for the i-layer thickness of 200 to 300 nm the generation dominates the carrier density and thus Jsc, whereas for the i-layer thickness of 300 to 400 nm the recombination becomes the leading factor. The simulation results of cell performances are in good agreement with experimental data, indicating that our simulation has great reliability. In addition, the a-Si:H-like solar cells have low light-induced degradation, which in turn can have a great potential to be used for stable and high-efficiency solar cells.

  11. On the intrinsic moisture permeation rate of remote microwave plasma-deposited silicon nitride layers

    NARCIS (Netherlands)

    van Assche, F. J. H.; Unnikrishnan, S.; Michels, J. J.; van Mol, A. M. B.; van de Weijer, P.; M. C. M. van de Sanden,; Creatore, M.

    2014-01-01

    We report on a low substrate temperature (110 °C) remote microwave plasma-enhanced chemical vapor deposition (PECVD) process of silicon nitride barrier layers against moisture permeation for organic light emitting diodes (OLEDs) and other moisture sensitive devices such as organic

  12. Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) yields better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD).

    Science.gov (United States)

    Böke, Frederik; Giner, Ignacio; Keller, Adrian; Grundmeier, Guido; Fischer, Horst

    2016-07-20

    Densely sintered aluminum oxide (α-Al2O3) is chemically and biologically inert. To improve the interaction with biomolecules and cells, its surface has to be modified prior to use in biomedical applications. In this study, we compared two deposition techniques for adhesion promoting SiOx films to facilitate the coupling of stable organosilane monolayers on monolithic α-alumina; physical vapor deposition (PVD) by thermal evaporation and plasma enhanced chemical vapor deposition (PE-CVD). We also investigated the influence of etching on the formation of silanol surface groups using hydrogen peroxide and sulfuric acid solutions. The film characteristics, that is, surface morphology and surface chemistry, as well as the film stability and its adhesion properties under accelerated aging conditions were characterized by means of X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), inductively coupled plasma-optical emission spectroscopy (ICP-OES), and tensile strength tests. Differences in surface functionalization were investigated via two model organosilanes as well as the cell-cytotoxicity and viability on murine fibroblasts and human mesenchymal stromal cells (hMSC). We found that both SiOx interfaces did not affect the cell viability of both cell types. No significant differences between both films with regard to their interfacial tensile strength were detected, although failure mode analyses revealed a higher interfacial stability of the PE-CVD films compared to the PVD films. Twenty-eight day exposure to simulated body fluid (SBF) at 37 °C revealed a partial delamination of the thermally deposited PVD films whereas the PE-CVD films stayed largely intact. SiOx layers deposited by both PVD and PE-CVD may thus serve as viable adhesion-promoters for subsequent organosilane coupling agent binding to α-alumina. However, PE-CVD appears to be favorable for long-term direct film exposure to aqueous

  13. Hierarchy of Electronic Properties of Chemically Derived and Pristine Graphene Probed by Microwave Imaging

    KAUST Repository

    Kundhikanjana, Worasom; Lai, Keji; Wang, Hailiang; Dai, Hongjie; Kelly, Michael A.; Shen, Zhi-xun

    2009-01-01

    inhomogeneity. For the conductive chemical graphene, the residual defects lead to a systematic reduction of the microwave signals. In contrast, the signals on pristine graphene agree well with a lumped-element circuit model. The local impedance information can

  14. Experimental and theoretical rationalization of the growth mechanism of silicon quantum dots in non-stoichiometric SiN x : role of chlorine in plasma enhanced chemical vapour deposition.

    Science.gov (United States)

    Mon-Pérez, E; Salazar, J; Ramos, E; Salazar, J Santoyo; Suárez, A López; Dutt, A; Santana, G; Monroy, B Marel

    2016-11-11

    Silicon quantum dots (Si-QDs) embedded in an insulator matrix are important from a technological and application point of view. Thus, being able to synthesize them in situ during the matrix growth process is technologically advantageous. The use of SiH 2 Cl 2 as the silicon precursor in the plasma enhanced chemical vapour deposition (PECVD) process allows us to obtain Si-QDs without post-thermal annealing. Foremost in this work, is a theoretical rationalization of the mechanism responsible for Si-QD generation in a film including an analysis of the energy released by the extraction of HCl and the insertion of silylene species into the terminal surface bonds. From the results obtained using density functional theory (DFT), we propose an explanation of the mechanism responsible for the formation of Si-QDs in non-stoichiometric SiN x starting from chlorinated precursors in a PECVD system. Micrograph images obtained through transmission electron microscopy confirmed the presence of Si-QDs, even in nitrogen-rich (N-rich) samples. The film stoichiometry was controlled by varying the growth parameters, in particular the NH 3 /SiH 2 Cl 2 ratio and hydrogen dilution. Experimental and theoretical results together show that using a PECVD system, along with chlorinated precursors it is possible to obtain Si-QDs at a low substrate temperature without annealing treatment. The optical property studies carried out in the present work highlight the prospects of these thin films for down shifting and as an antireflection coating in silicon solar cells.

  15. Experimental and theoretical rationalization of the growth mechanism of silicon quantum dots in non-stoichiometric SiN x : role of chlorine in plasma enhanced chemical vapour deposition

    Science.gov (United States)

    Mon-Pérez, E.; Salazar, J.; Ramos, E.; Santoyo Salazar, J.; López Suárez, A.; Dutt, A.; Santana, G.; Marel Monroy, B.

    2016-11-01

    Silicon quantum dots (Si-QDs) embedded in an insulator matrix are important from a technological and application point of view. Thus, being able to synthesize them in situ during the matrix growth process is technologically advantageous. The use of SiH2Cl2 as the silicon precursor in the plasma enhanced chemical vapour deposition (PECVD) process allows us to obtain Si-QDs without post-thermal annealing. Foremost in this work, is a theoretical rationalization of the mechanism responsible for Si-QD generation in a film including an analysis of the energy released by the extraction of HCl and the insertion of silylene species into the terminal surface bonds. From the results obtained using density functional theory (DFT), we propose an explanation of the mechanism responsible for the formation of Si-QDs in non-stoichiometric SiN x starting from chlorinated precursors in a PECVD system. Micrograph images obtained through transmission electron microscopy confirmed the presence of Si-QDs, even in nitrogen-rich (N-rich) samples. The film stoichiometry was controlled by varying the growth parameters, in particular the NH3/SiH2Cl2 ratio and hydrogen dilution. Experimental and theoretical results together show that using a PECVD system, along with chlorinated precursors it is possible to obtain Si-QDs at a low substrate temperature without annealing treatment. The optical property studies carried out in the present work highlight the prospects of these thin films for down shifting and as an antireflection coating in silicon solar cells.

  16. The comparison of the optical spectra of carbon coatings prepared by magnetron sputtering and microwave plasma enhanced chemical vapor deposition measured by the photothermal deflection spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Remeš, Zdeněk; Pham, T.T.; Varga, Marián; Kromka, Alexander; Mao, H.B.

    2015-01-01

    Roč. 7, č. 4 (2015), s. 321-324 ISSN 2164-6627 R&D Projects: GA MŠk LH12186 Institutional support: RVO:68378271 Keywords : nanocrystalline diamond * amorphous carbon * magnetron sputtering * CVD * optical spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism

  17. Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH{sub 4}/H{sub 2}/N{sub 2} plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ficek, Mateusz, E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdansk (Poland); Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Sankaran, Kamatchi J.; Haenen, Ken [Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Ryl, Jacek; Darowicki, Kazimierz [Department of Electrochemistry, Corrosion and Material Engineering, Gdansk University of Technology, 11/12 Narutowicza St., 80-233 Gdansk (Poland); Bogdanowicz, Robert [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdansk (Poland); Materials and Process Simulation Center, California Institute of Technology, Pasadena, California 91125 (United States); Lin, I-Nan [Department of Physics, Tamkang University, Tamsui 251, Taiwan (China)

    2016-06-13

    The influence of N{sub 2} concentration (1%–8%) in CH{sub 4}/H{sub 2}/N{sub 2} plasma on structure and optical properties of nitrogen doped diamond (NDD) films was investigated. Thickness, roughness, and optical properties of the NDD films in the VIS–NIR range were investigated on the silicon substrates using spectroscopic ellipsometry. The samples exhibited relatively high refractive index (2.6 ± 0.25 at 550 nm) and extinction coefficient (0.05 ± 0.02 at 550 nm) with a transmittance of 60%. The optical investigation was supported by the molecular and atomic data delivered by Raman studies, bright field transmission electron microscopy imaging, and X-ray photoelectron spectroscopy diagnostics. Those results revealed that while the films grown in CH{sub 4}/H{sub 2} plasma contained micron-sized diamond grains, the films grown using CH{sub 4}/H{sub 2}/(4%)N{sub 2} plasma exhibited ultranano-sized diamond grains along with n-diamond and i-carbon clusters, which were surrounded by amorphous carbon grain boundaries.

  18. Structural, optical and mechanical properties of thin diamond and silicon carbide layers grown by low pressure microwave linear antenna plasma enhanced chemical vapour deposition

    Czech Academy of Sciences Publication Activity Database

    Taylor, Andrew; Drahokoupil, Jan; Fekete, Ladislav; Klimša, Ladislav; Kopeček, Jaromír; Purkrt, Adam; Remeš, Zdeněk; Čtvrtlík, Radim; Tomáštík, Jan; Frank, Otakar; Janíček, P.; Mistrík, J.; Mortet, Vincent

    2016-01-01

    Roč. 69, Oct (2016), s. 13-18 ISSN 0925-9635 R&D Projects: GA MŠk LO1409; GA TA ČR TA03010743; GA ČR GA13-31783S; GA MŠk(CZ) LD14011; GA MŠk LM2015088 Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568; AV ČR(CZ) Fellowship J. E. Purkyně Institutional support: RVO:68378271 ; RVO:61388955 Keywords : diamond * silicon carbide * adherence * mechanical properties * optical properties Subject RIV: BM - Solid Matter Physics ; Magnetism; CG - Electrochemistry (UFCH-W) Impact factor: 2.561, year: 2016

  19. Surface roughness of polyvinyl siloxane impression materials following chemical disinfection, autoclave and microwave sterilization.

    Science.gov (United States)

    Al Kheraif, Abdulaziz Abdullah

    2013-05-01

    Autoclave sterilization and microwave sterilization has been suggested as the effective methods for the disinfection of elastomeric impressions, but subjecting elastomeric impressions to extreme temperature may have adverse effects on critical properties of the elastomers. To evaluate the effect of chemical disinfection as well as autoclave and microwave sterilization on the surface roughness of elastomeric impression materials. The surface roughness of five commercially available polyvinyl siloxane impression materials (Coltene President, Affinis Perfect impression, Aquasil, 3M ESPE Express and GC Exafast) were evaluated after subjecting them to chemical disinfection, autoclaving and microwave sterilization using a Talysurf Intra 50 instrument. Twenty specimens from each material were fabricated and divided into four equal groups, three experimental and one control (n=25). The differences in the mean surface roughness between the treatment groups were recorded and statistically analyzed. No statistically significant increase in the surface roughness was observed when the specimens were subjected to chemical disinfection and autoclave sterilization, increase in roughness and discoloration was observed in all the materials when specimens were subjected to microwave sterilization. Chemical disinfection did not have a significant effect but, since it is less effective, autoclave sterilization can be considered effective and autoclaving did not show any specimen discoloration as in microwave sterilization. Microwave sterilization may be considered when impressions are used to make diagnostic casts. A significant increase in surface roughness may produce rougher casts, resulting in rougher tissue surfaces for denture and cast restorations. Autoclave sterilization of vinyl polysiloxane elastomeric impressions for 5 minutes at 134°C at 20 psi may be considered an effective method over chemical disinfection and microwave sterilization, because chemical disinfection does

  20. Role of hydrogen in Sb film deposition and characterization of Sb and GexSby films deposited by cyclic plasma enhanced chemical vapor deposition using metal-organic precursors

    International Nuclear Information System (INIS)

    Kim, Hyung Keun; Jung, Jin Hwan; Choi, Doo Jin

    2012-01-01

    To meet increasing demands for chemical vapor deposition methods for high performance phase-change memory, cyclic plasma enhanced chemical vapor deposition of Sb and Ge x Sb y phase-change films and characterization of their properties were performed. Two cycle sequences were designed to investigate the role of hydrogen gas as a reduction gas during Sb film deposition. Hydrogen gas was not introduced into the reaction chamber during the purge step in cycle sequence A and was introduced during the purge step for cycle sequence B. The role of hydrogen gas was investigated by comparing the results obtained from these two cycle sequences and was concluded to exert an effect by a combination of precursor decomposition, surface maintenance as a hydrogen termination agent, and surface etching. These roles of hydrogen gas are discussed through consideration of changes in deposition rates, the oxygen concentration on the surface of the Sb film, and observations of film surface morphology. Based on these results, Ge x Sb y phase-change films were deposited with an adequate flow rate of hydrogen gas. The Ge and Sb composition of the film was controlled with the designed cycle sequences. A strong oxygen affinity for Ge was observed during the X-ray photoelectron spectroscopy analysis of Sb 3d, Sb 4d, and Ge 3d orbitals. Based on the XPS results, the ratios of Ge to Sb were calculated to be Ge 0.32 Sb 0.68 , Ge 0.38 Sb 0.62 , Ge 0.44 Sb 0.56 , Ge 0.51 Sb 0.49 and Ge 0.67 Sb 0.33 for the G1S7, G1S3, G1S2, G1S1, and G2S1 cycles, respectively. Crystal structures of Sb, Ge, and the GeSb metastable phase were observed with various Ge x Sb y film compositions. Sb crystallinity decreased with respect to Ge crystallinity by increasing the Ge fraction. A current–voltage curve was introduced, and an electro-switching phenomenon was clearly generated at a typical voltage, V th . V th values increased in conjunction with an increased proportion of Ge. The Sb crystallinity decrease and V

  1. Hierarchy of Electronic Properties of Chemically Derived and Pristine Graphene Probed by Microwave Imaging

    KAUST Repository

    Kundhikanjana, Worasom

    2009-11-11

    Local electrical imaging using microwave impedance microscope is performed on graphene in different modalities, yielding a rich hierarchy of the local conductivity. The low-conductivity graphite oxide and its derivatives show significant electronic inhomogeneity. For the conductive chemical graphene, the residual defects lead to a systematic reduction of the microwave signals. In contrast, the signals on pristine graphene agree well with a lumped-element circuit model. The local impedance information can also be used to verify the electrical contact between overlapped graphene pieces. © 2009 American Chemical Society.

  2. Microwave-ultrasound combined reactor suitable for atmospheric sample preparation procedure of biological and chemical products

    NARCIS (Netherlands)

    Lagha, A.; Chemat, S.; Bartels, P.V.; Chemat, F.

    1999-01-01

    A compact apparatus in which a specific position can be irradiated by microwaves (MW) and ultrasound (US) simultaneously has been developed. The MW-US reactor has been designed for atmospheric pressure digestion and dissolution of biological and chemical products. The reactor can treat a range of

  3. Optimization of microwave-induced chemical etching for rapid development of neutron-induced recoil tracks in CR-39 detectors

    International Nuclear Information System (INIS)

    Sahoo, G.S.; Tripathy, S.P.; Bandyopadhyay, T.

    2014-01-01

    A systematic investigation is carried out to optimize the recently established microwave-induced chemical etching (MICE) parameters for rapid development of neutron-induced recoil tracks in CR-39 detectors. Several combinations of all available microwave powers with different etching durations were analysed to determine the most suitable etching condition. The etching duration was found to reduce with increasing microwave power and the tracks were observed at about 18, 15, 12, and 6 min for 300, 450, 600 and 900 W of microwave powers respectively compared to a few hours in chemical etching (CE) method. However, for complete development of tracks the etching duration of 30, 40, 50 and 60 min were found to be suitable for the microwave powers of 900, 600, 450 and 300 W, respectively. Temperature profiles of the etchant for all the available microwave powers at different etching durations were generated to regulate the etching process in a controlled manner. The bulk etch rates at different microwave powers were determined by 2 methods, viz., gravimetric and removed thickness methods. A logarithmic expression was used to fit the variation of bulk etch rate with microwave power. Neutron detection efficiencies were obtained for all the cases and the results on track parameters obtained with MICE technique were compared with those obtained from another detector processed with chemical etching. - Highlights: • Microwave-induced chemical etching method is optimized for rapid development of recoil tracks due to neutrons in CR-39 detector. • Several combinations of microwave powers and etching durations are investigated to standardize the suitable etching condition. • Bulk-etch rates are determined for all microwave powers by two different methods, viz. gravimetric and removed thickness method. • The method is found to be simple, effective and much faster compared to conventional chemical etching

  4. Devulcanization of ground tire rubber: Physical and chemical changes after different microwave exposure times

    Directory of Open Access Journals (Sweden)

    P. S. Garcia

    2015-11-01

    Full Text Available Microwave devulcanization is known to be a promising and an efficient rubber recycling method which makes possible for the rubber to regain its fluidity, and makes it capable of being remolded and revulcanized. The focus of this work is to understand the physical and chemical changes that occur in the ground tire rubber after different microwave exposure periods. For this purpose chemical, thermal, rheological and morphological analyses were performed on the tire rubber, which contains natural rubber (NR and styrene-butadiene rubber (SBR as polymeric material. The results showed that the microwave treatment promoted the breaking of sulfur cross-links and consequently increased the rubber fluidity. However, long periods of exposure led to degradation and modification of some properties. At nanoscale, the deformation of the devulcanized NR domain under stress was observed, and the morphology obtained appears to be a droplet dispersion morphology. The most exposed samples presented only one glass transition temperature, and from this it was concluded that the treatment may have played an important role in the compatibilization of the elastomeric blend. Based on the results, it is required to control the microwave exposure time and polymeric degradation in order to achieve a regenerated rubber with satisfactory properties.

  5. Isolation and characterization of cellulose nanofibers from bamboo using microwave liquefaction combined with chemical treatment and ultrasonication

    Science.gov (United States)

    Jiulong Xie; Chung Hse; Cornelis F. De Hoop; Tingxing Hu; Jinqiu Qi; Todd F. Shupe

    2016-01-01

    Cellulose nanofibers were successfully isolated from bamboo using microwave liquefaction combinedwith chemical treatment and ultrasonic nanofibrillation processes. The microwave liquefaction couldeliminate almost all the lignin in bamboo, resulting in high cellulose content residues within 7 min, andthe cellulose enriched residues could be readily purified by...

  6. Branched carbon nanofiber network synthesis at room temperature using radio frequency supported microwave plasmas

    OpenAIRE

    Boskovic, BO; Stolojan, V; Zeze, DA; Forrest, RD; Silva, SRP; Haq, S

    2004-01-01

    Carbon nanofibers have been grown at room temperature using a combination of radio frequency and microwave assisted plasma-enhanced chemical vapor deposition. The nanofibers were grown, using Ni powder catalyst, onto substrates kept at room temperature by using a purposely designed water-cooled sample holder. Branched carbon nanofiber growth was obtained without using a template resulting in interconnected carbon nanofiber network formation on substrates held at room temperatur...

  7. Impact of Microwave Treatment on Chemical Constituents in Fresh Rhizoma Gastrodiae (Tianma by UPLC-MS Analysis

    Directory of Open Access Journals (Sweden)

    Qimeng Fan

    2014-01-01

    Full Text Available Fresh Rhizoma Gastrodiae (Tianma was processed in a microwave oven at 2450 MHz in order to study the effect on the main chemical component changes taking place during microwave treatment. It was found that microwave affected the chemical composition of Tianma. Seven compounds, including gastrodin, gastrodigenin (p-hydroxybenzylalcohol, p-hydroxybenzaldehyde, vanillyl alcohol, vanillin, adenine, and 5-hydroxymethylfurfural, were identified in this study. As major active compounds, the contents of gastrodin and gastrodigenin in MWT Tianma were both twice as much as those in raw Tianma. Besides, the MS data show that there are still some unidentified compositions in Tianma, and there are also many converted compounds in MWT Tianma, which is worthy of further work. The results have indicated that microwave treated fresh Tianma might be helpful in designing the processing of traditional Chinese medicine and the application of microwave technology in traditional Chinese medicine needs to be researched further in the future.

  8. Fabrication of CdS films with superhydrophobicity by the microwave assisted chemical bath deposition.

    Science.gov (United States)

    Liu, Y; Tan, T; Wang, B; Zhai, R; Song, X; Li, E; Wang, H; Yan, H

    2008-04-15

    A simple method of microwave assisted chemical bath deposition (MA-CBD) was adopted to fabricate cadmium sulfide (CdS) thin films. The superhydrophobic surface with a water contact angle (CA) of 151 degrees was obtained. Via a scanning electron microscopy (SEM) observation, the film was proved having a porous micro/nano-binary structure which can change the property of the surface and highly enhance the hydrophobicity of the film. A possible mechanism was suggested to describe the growth of the porous structure, in which the microwave heating takes an important role in the formation of two distinct characteristic dimensions of CdS precipitates, the growth of CdS sheets in micro-scale and sphere particles in nano-scale. The superhydrophobic films may provide novel platforms for photovoltaic, sensor, microfluidic and other device applications.

  9. Toroidal plasma enhanced CVD of diamond films

    International Nuclear Information System (INIS)

    Zvanya, John; Cullen, Christopher; Morris, Thomas; Krchnavek, Robert R.; Holber, William; Basnett, Andrew; Basnett, Robert; Hettinger, Jeffrey

    2014-01-01

    An inductively coupled toroidal plasma source is used as an alternative to microwave plasmas for chemical vapor deposition of diamond films. The source, operating at a frequency of 400 kHz, synthesizes diamond films from a mixture of argon, methane, and hydrogen. The toroidal design has been adapted to create a highly efficient environment for diamond film deposition: high gas temperature and a short distance from the sample to the plasma core. Using a toroidal plasma geometry operating in the medium frequency band allows for efficient (≈90%) coupling of AC line power to the plasma and a scalable path to high-power and large-area operation. In test runs, the source generates a high flux of atomic hydrogen over a large area, which is favorable for diamond film growth. Using a deposition temperature of 900–1050 °C and a source to sample distance of 0.1–2.0 cm, diamond films are deposited onto silicon substrates. The results showed that the deposition rate of the diamond films could be controlled using the sample temperature and source to sample spacing. The results also show the films exhibit good-quality polycrystalline diamond as verified by Raman spectroscopy, x-ray diffraction, and scanning electron microscopy. The scanning electron microscopy and x-ray diffraction results show that the samples exhibit diamond (111) and diamond (022) crystallites. The Raman results show that the sp 3 peak has a narrow spectral width (FWHM 12 ± 0.5 cm −1 ) and that negligible amounts of the sp 2 band are present, indicating good-quality diamond films

  10. SiC nanofibers grown by high power microwave plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Honda, Shin-ichi; Baek, Yang-Gyu; Ikuno, Takashi; Kohara, Hidekazu; Katayama, Mitsuhiro; Oura, Kenjiro; Hirao, Takashi

    2003-01-01

    Silicon carbide (SiC) nanofibers have been synthesized on Si substrates covered by Ni thin films using high power microwave chemical vapor deposition (CVD). Characterization using transmission electron microscopy (TEM) combined with electron energy-dispersive X-ray spectroscopy (EDX) revealed that the resultant fibrous nanostructures were assigned to β-SiC with high crystallinity. The formation of SiC nanofibers can be explained by the vapor liquid solid (VLS) mechanism in which precipitation of SiC occurs from the supersaturated Ni nanoparticle containing Si and C

  11. Microwave plasma chemical synthesis of nanocrystalline carbon film structures and study their properties

    Science.gov (United States)

    Bushuev, N.; Yafarov, R.; Timoshenkov, V.; Orlov, S.; Starykh, D.

    2015-08-01

    The self-organization effect of diamond nanocrystals in polymer-graphite and carbon films is detected. The carbon materials deposition was carried from ethanol vapors out at low pressure using a highly non-equilibrium microwave plasma. Deposition processes of carbon film structures (diamond, graphite, graphene) is defined. Deposition processes of nanocrystalline structures containing diamond and graphite phases in different volume ratios is identified. The solid film was obtained under different conditions of microwave plasma chemical synthesis. We investigated the electrical properties of the nanocrystalline carbon films and identified it's from various factors. Influence of diamond-graphite film deposition mode in non-equilibrium microwave plasma at low pressure on emission characteristics was established. This effect is justified using the cluster model of the structure of amorphous carbon. It was shown that the reduction of bound hydrogen in carbon structures leads to a decrease in the threshold electric field of emission from 20-30 V/m to 5 V/m. Reducing the operating voltage field emission can improve mechanical stability of the synthesized film diamond-graphite emitters. Current density emission at least 20 A/cm2 was obtained. Nanocrystalline carbon film materials can be used to create a variety of functional elements in micro- and nanoelectronics and photonics such as cold electron source for emission in vacuum devices, photonic devices, cathodoluminescent flat display, highly efficient white light sources. The obtained graphene carbon net structure (with a net size about 6 μm) may be used for the manufacture of large-area transparent electrode for solar cells and cathodoluminescent light sources

  12. Microwave plasma-assisted chemical vapor deposition of porous carbon film as supercapacitive electrodes

    Science.gov (United States)

    Wu, Ai-Min; Feng, Chen-Chen; Huang, Hao; Paredes Camacho, Ramon Alberto; Gao, Song; Lei, Ming-Kai; Cao, Guo-Zhong

    2017-07-01

    Highly porous carbon film (PCF) coated on nickel foam was prepared successfully by microwave plasma-assisted chemical vapor deposition (MPCVD) with C2H2 as carbon source and Ar as discharge gas. The PCF is uniform and dense with 3D-crosslinked nanoscale network structure possessing high degree of graphitization. When used as the electrode material in an electrochemical supercapacitor, the PCF samples verify their advantageous electrical conductivity, ion contact and electrochemical stability. The test results show that the sample prepared under 1000 W microwave power has good electrochemical performance. It displays the specific capacitance of 62.75 F/g at the current density of 2.0 A/g and retains 95% of its capacitance after 10,000 cycles at the current density of 2.0 A/g. Besides, its near-rectangular shape of the cyclic voltammograms (CV) curves exhibits typical character of an electric double-layer capacitor, which owns an enhanced ionic diffusion that can fit the requirements for energy storage applications.

  13. Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hemawan, Kadek W.; Gou, Huiyang; Hemley, Russell J. [Geophysical Laboratory, Carnegie Institution of Washington, 5251 Broad Branch Rd., NW, Washington, DC 20015 (United States)

    2015-11-02

    Polycrystalline diamond has been synthesized on silicon substrates at atmospheric pressure, using a microwave capillary plasma chemical vapor deposition technique. The CH{sub 4}/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H{sub 2} into the deposition gas chemistry. Electronically excited species of CN, C{sub 2}, Ar, N{sub 2}, CH, H{sub β}, and H{sub α} were observed in the emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T{sub 2g} phonon at 1333 cm{sup −1} peak relative to the Raman features of graphitic carbon. Field emission scanning electron microscopy images reveal that, depending on the growth conditions, the carbon microstructures of grown films exhibit “coral” and “cauliflower-like” morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm.

  14. Low-temperature synthesis of graphene on nickel foil by microwave plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Kim, Y.; Song, W.; Lee, S. Y.; Jeon, C.; Jung, W.; Kim, M.; Park, C.-Y.

    2011-01-01

    Microwave plasma chemical vapor deposition (MPCVD) was employed to synthesize high quality centimeter scale graphene film at low temperatures. Monolayer graphene was obtained by varying the gas mixing ratio of hydrogen and methane to 80:1. Using advantages of MPCVD, the synthesis temperature was decreased from 750 deg. C down to 450 deg. C. Optical microscopy and Raman mapping images exhibited that a large area monolayer graphene was synthesized regardless of the temperatures. Since the overall transparency of 89% and low sheet resistances ranging from 590 to 1855 Ω/sq of graphene films were achieved at considerably low synthesis temperatures, MPCVD can be adopted in manufacturing future large-area electronic devices based on graphene film.

  15. Low-temperature synthesis of graphene on nickel foil by microwave plasma chemical vapor deposition

    Science.gov (United States)

    Kim, Y.; Song, W.; Lee, S. Y.; Jeon, C.; Jung, W.; Kim, M.; Park, C.-Y.

    2011-06-01

    Microwave plasma chemical vapor deposition (MPCVD) was employed to synthesize high quality centimeter scale graphene film at low temperatures. Monolayer graphene was obtained by varying the gas mixing ratio of hydrogen and methane to 80:1. Using advantages of MPCVD, the synthesis temperature was decreased from 750 °C down to 450 °C. Optical microscopy and Raman mapping images exhibited that a large area monolayer graphene was synthesized regardless of the temperatures. Since the overall transparency of 89% and low sheet resistances ranging from 590 to 1855 Ω/sq of graphene films were achieved at considerably low synthesis temperatures, MPCVD can be adopted in manufacturing future large-area electronic devices based on graphene film.

  16. Morphology and structure of Ti-doped diamond films prepared by microwave plasma chemical vapor deposition

    Science.gov (United States)

    Liu, Xuejie; Lu, Pengfei; Wang, Hongchao; Ren, Yuan; Tan, Xin; Sun, Shiyang; Jia, Huiling

    2018-06-01

    Ti-doped diamond films were deposited through a microwave plasma chemical vapor deposition (MPCVD) system for the first time. The effects of the addition of Ti on the morphology, microstructure and quality of diamond films were systematically investigated. Secondary ion mass spectrometry results show that Ti can be added to diamond films through the MPCVD system using tetra n-butyl titanate as precursor. The spectra from X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy and the images from scanning electron microscopy of the deposited films indicate that the diamond phase clearly exists and dominates in Ti-doped diamond films. The amount of Ti added obviously influences film morphology and the preferred orientation of the crystals. Ti doping is beneficial to the second nucleation and the growth of the (1 1 0) faceted grains.

  17. Effects of the oxygen fraction and substrate bias power on the electrical and optical properties of silicon oxide films by plasma enhanced chemical vapour deposition using TMOS/O2 gas

    International Nuclear Information System (INIS)

    Bang, S B; Chung, T H; Kim, Y; Kang, M S; Kim, J K

    2004-01-01

    Thin oxide films are deposited from tetramethoxysilane in an inductively coupled oxygen glow discharge supplied with radio frequency power. The chemical bonding states of deposited films are analysed by Fourier transform infrared spectroscopy. The deposition rate and optical properties are determined from spectroscopic ellipsometry. Capacitance-voltage measurements are performed in MOS capacitors to obtain the electrical properties of the deposited films. With these tools, the effects of the substrate bias power and the oxygen mole fraction in the gas on the properties of the film are investigated. The refractive index first decreases with an increase in the oxygen mole fraction, and then increases again, showing a behaviour opposite to that of the deposition rate. The deposition rate increases with increasing substrate bias power and then saturates, while the refractive index increases slightly with an increase in the substrate bias power. The fixed oxide charge density decreases with increasing oxygen fraction and with increasing substrate bias power, while the interface trap density increases with increasing oxygen fraction and with increasing substrate bias power

  18. Controlled fabrication of the strong emission YVO4:Eu3+ nanoparticles and nanowires by microwave assisted chemical synthesis

    International Nuclear Information System (INIS)

    Huong, Tran Thu; Vinh, Le Thi; Phuong, Ha Thi; Khuyen, Hoang Thi; Anh, Tran Kim; Tu, Vu Duc; Minh, Le Quoc

    2016-01-01

    In this report, we are presenting the controlled fabrication results of the strong emission YVO 4 : Eu 3+ nanoparticles and nanowires by microwave which is assisted chemical synthesis. The effects of incorporated synthesis conditions such as microwave irradiated powers, pH values and concentration of chemical composition on properties of nanomaterials are also investigated to obtain the controllable size and homogenous morphology. Morphological and optical properties of YVO 4 : Eu 3+ prepared products which have been characterized by X-ray diffraction (XRD), field emission micrcroscopy (FESEM) and photoluminescence spectroscopy. As based from result of synthesized samples, we found that the changing of pH values, microwave irradiated powers and chemical composition rise to change reform the size and shape of materials from nanoparticles (diameter about 20 nm) to wires shape (with about 500÷800 nm length and 10÷20 nm width). The photoluminescence (PL) spectroscopy measurements of YVO 4 : Eu 3+ nanostructure materials under UV excitation showed that: the strong luminescence in red region with narrow lines corresponding to the intra-4f transitions of 5 D 0 – 7 F j (j=1, 2, 3, and 4) of Eu 3+ ions with the highest luminescence intensity of 5 D 0 → 7 F 2 transition. - Highlights: • The strong emission YVO 4 :Eu 3+ nanostructure materials were successfully synthesized by microwave assisted chemical synthesis. • The size, morphology and luminescence of the YVO 4 :Eu 3+ nanostructure materials can be controlled by the solution pH, microwave irradiated powers and chemical composition. • These YVO 4 :Eu 3+ nanostructure materials above can potentially applied in various fields of application, especially in luminescent labeling and visualization in biomedical application.

  19. Simulated experiment for elimination of chemical and biological warfare agents by making use of microwave plasma torch

    International Nuclear Information System (INIS)

    Hong, Yong C.; Kim, Jeong H.; Uhm, Han S.

    2004-01-01

    The threat of chemical and biological warfare agents in a domestic terrorist attack and in military conflict is increasing worldwide. Elimination and decontamination of chemical and biological warfare (CBW) agents are immediately required after such an attack. Simulated experiment for elimination of CBW agents by making use of atmospheric-pressure microwave plasma torches is carried out. Elimination of biological warfare agents indicated by the vitrification or burnout of sewage sludge powders and decomposition of toluene gas as a chemical agent stimulant are presented. A detailed characterization for the elimination of the simulant chemicals using Fourier transform infrared and gas chromatography is also presented

  20. Simulated experiment for elimination of chemical and biological warfare agents by making use of microwave plasma torch

    Science.gov (United States)

    Hong, Yong C.; Kim, Jeong H.; Uhm, Han S.

    2004-02-01

    The threat of chemical and biological warfare agents in a domestic terrorist attack and in military conflict is increasing worldwide. Elimination and decontamination of chemical and biological warfare (CBW) agents are immediately required after such an attack. Simulated experiment for elimination of CBW agents by making use of atmospheric-pressure microwave plasma torches is carried out. Elimination of biological warfare agents indicated by the vitrification or burnout of sewage sludge powders and decomposition of toluene gas as a chemical agent stimulant are presented. A detailed characterization for the elimination of the simulant chemicals using Fourier transform infrared and gas chromatography is also presented.

  1. Comparison of three optimized digestion methods for rapid determination of chemical oxygen demand: Closed microwaves, open microwaves and ultrasound irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Domini, Claudia E. [Departamento de Quimica, Universidad Nacional del Sur, Av. Alem 1253, 8000 Bahia Blanca (Argentina); Hidalgo, Montserrat [Departamento de Quimica Analitica, Nutricion y Bromatologia, Universidad de Alicante, Apdo. 99, 03080 Alicante (Spain); Marken, Frank [Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Canals, Antonio [Departamento de Quimica Analitica, Nutricion y Bromatologia, Universidad de Alicante, Apdo. 99, 03080 Alicante (Spain)]. E-mail: a.canals@ua.es

    2006-03-02

    In the present work, experimental design was used for the fast optimization of three kinds of sample digestion procedures with the final aim of obtaining the COD value of wastewater samples. The digestion methods evaluated were 'closed microwave-assisted' (CMWD), 'open microwave-assisted' (OMWD) and 'ultrasound-assisted' (USD). Classical digestion was used as reference method. The optimum values for the different variables studied in each method were: 90 psi pressure, 475 W power and 4 min irradiation time (CMWD); 150 deg. C temperature and 4 min irradiation time (OMWD); 90% of maximum nominal power (180 W), 0.9 s (s{sup -1}) cycles and 1 min irradiation time (USD). In all cases, interference concentration that produces a deviation of 10% in COD values is 13.4, 23.4, 21.1 and 2819 mg/L for S{sup 2-}, Fe{sup 2+}, NO{sub 2} {sup -} and Cl{sup -}, respectively. Under optimum conditions, the proposed digestion methods have been successfully applied, with the exception of pyridine, to several pure organic compounds and COD recoveries for 10 real wastewater samples were ranged between 88 and 104% of the values obtained with the classical (open reflux) method used as reference, with R.S.D. lower than 4% in most cases. Thus, the use of ultrasound energy for COD determination seems to be an interesting and promising alternative to conventional open reflux and microwave-assisted digestion methods used for the same purpose since the instrumentation is simpler, cheaper and safer and the digestion step faster than the ones used for the same purpose.

  2. Effect of ultrasonic and microwave disintegration on physico-chemical and biodegradation characteristics of waste-activated sludge.

    Science.gov (United States)

    Doğruel, Serdar; Özgen, Aslı Sedem

    2017-04-01

    The purpose of this study was to investigate the effect of ultrasonic and microwave disintegration on physico-chemical and biodegradability properties of waste-activated sludge (WAS) from a municipal wastewater treatment plant. Another aim was to carry out particle size distribution (PSD) analysis as an integral component of sludge characterization to highlight the transformation mechanisms involved in pretreatment processes and better understand the biodegradation patterns of sonicated and irradiated WAS liquids examined by means of respirometric measurements. Various combinations of sonication and microwave irradiation parameters were applied to optimize operating conditions. The optimum ultrasonic density was determined as 1.5 W/mL, and energy dosages lower than 30,000 kJ/kg TS resulted in a fairly linear increase in the soluble chemical oxygen demand (SCOD) release. An irradiation time of 10 min and a temperature of 175°C were selected as the optimum microwave pretreatment conditions for sludge liquefaction. The most apparent impact of ultrasonication on the PSD of COD was the shifting of the peak at the particulate fraction (>1600 nm) toward the lowest size range (<2 nm). Microwave heating at the selected experimental conditions and ultrasonic pretreatment at 30,000 kJ/kg TS exhibited comparable size distribution and biodegradation characteristics to those of domestic sewage.

  3. Physical and Chemical Properties of Bio-Oils From Microwave Pyrolysis of Corn Stover

    Science.gov (United States)

    Yu, Fei; Deng, Shaobo; Chen, Paul; Liu, Yuhuan; Wan, Yiqin; Olson, Andrew; Kittelson, David; Ruan, Roger

    This study was aimed to understand the physical and chemical properties of pyrolytic bio-oils produced from microwave pyrolysis of corn stover regarding their potential use as gas turbine and home heating fuels. The ash content, solids content, pH, heating value, minerals, elemental ratio, moisture content, and viscosity of the bio-oils were determined. The water content was approx 15.2 wt%, solids content 0.22 wt%, alkali metal content 12 parts per million, dynamic viscosity 185 mPa·s at 40°C, and gross high heating value 17.5 MJ/kg for a typical bio-oil produced. Our aging tests showed that the viscosity and water content increased and phase separation occurred during the storage at different temperatures. Adding methanol and/or ethanol to the bio-oils reduced the viscosity and slowed down the increase in viscosity and water content during the storage. Blending of methanol or ethanol with the bio-oils may be a simple and cost-effective approach to making the pyrolytic bio-oils into a stable gas turbine or home heating fuels.

  4. Remote operation of microwave systems for solids content analysis and chemical dissolution in highly radioactive environments

    International Nuclear Information System (INIS)

    Sturcken, E.F.; Floyd, T.S.; Manchester, D.P.

    1986-10-01

    Microwave systems provide quick and easy determination of solids content of samples in high-level radioactive cells. In addition, dissolution of samples is much faster when employing microwave techniques. These are great advantages because work in cells,using master-slave manipulators through leaded glass walls, is normally slower by an order of magnitude than direct contact methods. This paper describes the modifiction of a moisture/solids analyzer microwave system and a drying/digestion microwave system for remote operation in radiation environments. The moisture/solids analyzer has operated satisfactorily for over a year in a gamma radiation field of 1000 roentgens per hour and the drying/digestion system is ready for installation in a cell

  5. Synthesis and characterization of nano ZnO rods via microwave assisted chemical precipitation method

    Energy Technology Data Exchange (ETDEWEB)

    Uma Sangari, N., E-mail: umasangariselvakumar@gmail.com [Department of Chemistry, S.F.R. College for Women, Sivakasi 626123 (India); Chitra Devi, S. [Department of Chemistry, S.F.R. College for Women, Sivakasi 626123 (India)

    2013-01-15

    A microwave assisted chemical precipitation method has been employed for the synthesis of nano zinc oxide rods by reacting zinc nitrate and potassium hydroxide. The amount of potassium hydroxide was adjusted for three different pHs to achieve ZnO nano rods with varying aspect ratio. The mechanism of growth of nano rods is explained briefly. The average crystallite size of the as synthesized samples was analyzed by means of powder XRD pattern and estimated to vary from 25.6 nm to 43.1 nm. The existence of rods was confirmed using scanning electron microscopy (SEM). The samples were also analyzed using FT-IR. The optical properties of the samples were also studied by means of UV-visible spectra and Room Temperature Photo Luminescence studies. The band gap of the samples was determined from the DRS spectrum. A strong near band emission peaks due to surface defects are observed in the PL spectrum. - Graphical abstract: At the solution pH of 11 and 9, tetrapod-like and flower-like ZnO nano rods were formed along with separated rods respectively due to the formation of activated nuclei of different sizes. Highlights: Black-Right-Pointing-Pointer Increase in alkalinity of the precursor solution results in longer rods. Black-Right-Pointing-Pointer Beyond a saturation limit, the excess of added OH{sup -} ions inhibited the growth of rods. Black-Right-Pointing-Pointer Keeping all parameters the same, the alkalinity can only modify the aspect ratio of the rods and not their morphology.

  6. A new type of power energy for accelerating chemical reactions: the nature of a microwave-driving force for accelerating chemical reactions.

    Science.gov (United States)

    Zhou, Jicheng; Xu, Wentao; You, Zhimin; Wang, Zhe; Luo, Yushang; Gao, Lingfei; Yin, Cheng; Peng, Renjie; Lan, Lixin

    2016-04-27

    The use of microwave (MW) irradiation to increase the rate of chemical reactions has attracted much attention recently in nearly all fields of chemistry due to substantial enhancements in reaction rates. However, the intrinsic nature of the effects of MW irradiation on chemical reactions remains unclear. Herein, the highly effective conversion of NO and decomposition of H2S via MW catalysis were investigated. The temperature was decreased by several hundred degrees centigrade. Moreover, the apparent activation energy (Ea') decreased substantially under MW irradiation. Importantly, for the first time, a model of the interactions between microwave electromagnetic waves and molecules is proposed to elucidate the intrinsic reason for the reduction in the Ea' under MW irradiation, and a formula for the quantitative estimation of the decrease in the Ea' was determined. MW irradiation energy was partially transformed to reduce the Ea', and MW irradiation is a new type of power energy for speeding up chemical reactions. The effect of MW irradiation on chemical reactions was determined. Our findings challenge both the classical view of MW irradiation as only a heating method and the controversial MW non-thermal effect and open a promising avenue for the development of novel MW catalytic reaction technology.

  7. Preparation and characterization of activated carbon from pistachio nut shells via microwave-induced chemical activation

    International Nuclear Information System (INIS)

    Foo, K.Y.; Hameed, B.H.

    2011-01-01

    In this work, pistachio nut shell, a biomass residue abundantly available from the pistachio nut processing industries, was utilized as a feedstock for the preparation of activated carbon (PSAC) via microwave assisted KOH activation. The activation step was performed at the microwave input power of 600 W and irradiation time of 7 min. The porosity, functional and surface chemistry were featured by means of low temperature nitrogen adsorption, scanning electron microscopy and Fourier transform infrared spectroscopy. Result showed that the BET surface area, Langmuir surface area, and total pore volume of PSAC were 700.53 m 2 g -1 , 1038.78 m 2 g -1 and 0.375 m 3 g -1 , respectively. The adsorptive property of PSAC was tested using methylene blue dye as the targeted adsorbate. Equilibrium data was best fitted by the Langmuir isotherm model, showing a monolayer adsorption capacity of 296.57 mg g -1 . The study revealed the potentiality of microwave-induced activation as a viable activation method. -- Highlights: → Pistachio nut shell activated carbon (PSAC) was prepared via microwave assisted KOH activation. → The activation step was performed at the microwave input power of 600 W and irradiation time of 7 min. → BET surface area of PSAC was 700.53 m 2 /g. → Monolayer adsorption capacity of PSAC for MB was 296.57 mg/g.

  8. Preparation and characterization of activated carbon from pistachio nut shells via microwave-induced chemical activation

    Energy Technology Data Exchange (ETDEWEB)

    Foo, K. Y. [School of Chemical Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang (Malaysia); Hameed, B.H., E-mail: chbassim@eng.usm.my [School of Chemical Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang (Malaysia)

    2011-07-15

    In this work, pistachio nut shell, a biomass residue abundantly available from the pistachio nut processing industries, was utilized as a feedstock for the preparation of activated carbon (PSAC) via microwave assisted KOH activation. The activation step was performed at the microwave input power of 600 W and irradiation time of 7 min. The porosity, functional and surface chemistry were featured by means of low temperature nitrogen adsorption, scanning electron microscopy and Fourier transform infrared spectroscopy. Result showed that the BET surface area, Langmuir surface area, and total pore volume of PSAC were 700.53 m{sup 2} g{sup -1}, 1038.78 m{sup 2} g{sup -1} and 0.375 m{sup 3} g{sup -1}, respectively. The adsorptive property of PSAC was tested using methylene blue dye as the targeted adsorbate. Equilibrium data was best fitted by the Langmuir isotherm model, showing a monolayer adsorption capacity of 296.57 mg g{sup -1}. The study revealed the potentiality of microwave-induced activation as a viable activation method. -- Highlights: {yields} Pistachio nut shell activated carbon (PSAC) was prepared via microwave assisted KOH activation. {yields} The activation step was performed at the microwave input power of 600 W and irradiation time of 7 min. {yields} BET surface area of PSAC was 700.53 m{sup 2}/g. {yields} Monolayer adsorption capacity of PSAC for MB was 296.57 mg/g.

  9. Rheological, Chemical and Physical Characteristics of Golden Berry (Physalis peruviana L.) after Convective and Microwave Drying.

    Science.gov (United States)

    Nawirska-Olszańska, Agnieszka; Stępień, Bogdan; Biesiada, Anita; Kolniak-Ostek, Joanna; Oziembłowski, Maciej

    2017-07-29

    Studies on methods for fixing foods (with a slight loss of bioactive compounds) and obtaining attractive products are important with respect to current technology. The drying process allows for a product with highly bioactive properties. Drying of Physalis fruit was carried out in a conventional manner, and in a microwave under reduced pressure at 120 W and 480 W. After drying, the fruits were subjected to strength and rheological tests. Water activity, content of carotenoids and polyphenols and antioxidant activity as well as colour were also examined. The study showed that Physalis is a difficult material for drying. The best results were obtained using microwave drying at a power of 480 W. Physalis fruit microwave-dried by this method is characterized by higher resistance to compression than the fruit dried by convection. Dried fruit obtained in this way was characterized by higher contents of bioactive compounds, better antioxidant properties, and at the same time the lowest water activity.

  10. Rheological, Chemical and Physical Characteristics of Golden Berry (Physalis peruviana L. after Convective and Microwave Drying

    Directory of Open Access Journals (Sweden)

    Agnieszka Nawirska-Olszańska

    2017-07-01

    Full Text Available Studies on methods for fixing foods (with a slight loss of bioactive compounds and obtaining attractive products are important with respect to current technology. The drying process allows for a product with highly bioactive properties. Drying of Physalis fruit was carried out in a conventional manner, and in a microwave under reduced pressure at 120 W and 480 W. After drying, the fruits were subjected to strength and rheological tests. Water activity, content of carotenoids and polyphenols and antioxidant activity as well as colour were also examined. The study showed that Physalis is a difficult material for drying. The best results were obtained using microwave drying at a power of 480 W. Physalis fruit microwave-dried by this method is characterized by higher resistance to compression than the fruit dried by convection. Dried fruit obtained in this way was characterized by higher contents of bioactive compounds, better antioxidant properties, and at the same time the lowest water activity.

  11. Effect of residual water content on the physico-chemical properties of sucralfate dried gel obtained by microwave drying.

    Science.gov (United States)

    Gainotti, Alessandro; Losi, Elena; Bettini, Ruggero; Colombo, Paolo; Sonvico, Fabio; Baroni, Daniela; Santi, Patrizia; Colombo, Gaia

    2005-08-01

    The purpose of this study was to investigate the physico-chemical characteristics of sucralfate humid gel dried by microwaves, in relation to the residual water content. Differential scanning calorimetry (DSC) allowed for the determination of the water state in sucralfate samples. Fourier-transform infrared (FT-IR) spectroscopy was used to monitor the changes in sucralfate gel structure induced by the microwave drying. A boundary value of total water content for sucralfate gel samples was found at 42% (w/w). Below this value only bound water was present, whereas above this value, the increase in total water was due to free water. In the physical form of gel, the strength of the coordination between sulfate anions and the positively charged aluminum hydroxide was dependent on the residual water content. The study of the sedimentation behavior of water suspensions prepared with dried sucralfate allowed for the evaluation of the retention of gel properties. We found that the microwave drying process affected the sedimentation of sucralfate dried gel suspensions independent of the residual water content: when suspensions were prepared from sucralfate dried gel powders containing more than 42% (w/w) of residual water, the sedimentation ratio was higher than 0.9. The non-gel powder suspension showed a sedimentation ratio of 0.68 +/- 0.02, whereas the sucralfate humid gel suspension did not sediment.

  12. Comparative Evaluation of Dimensional Accuracy of Elastomeric Impression Materials when Treated with Autoclave, Microwave, and Chemical Disinfection.

    Science.gov (United States)

    Kamble, Suresh S; Khandeparker, Rakshit Vijay; Somasundaram, P; Raghav, Shweta; Babaji, Rashmi P; Varghese, T Joju

    2015-09-01

    Impression materials during impression procedure often get infected with various infectious diseases. Hence, disinfection of impression materials with various disinfectants is advised to protect the dental team. Disinfection can alter the dimensional accuracy of impression materials. The present study was aimed to evaluate the dimensional accuracy of elastomeric impression materials when treated with different disinfectants; autoclave, chemical, and microwave method. The impression materials used for the study were, dentsply aquasil (addition silicone polyvinylsiloxane syringe and putty), zetaplus (condensation silicone putty and light body), and impregum penta soft (polyether). All impressions were made according to manufacturer's instructions. Dimensional changes were measured before and after different disinfection procedures. Dentsply aquasil showed smallest dimensional change (-0.0046%) and impregum penta soft highest linear dimensional changes (-0.026%). All the tested elastomeric impression materials showed some degree of dimensional changes. The present study showed that all the disinfection procedures produce minor dimensional changes of impression material. However, it was within American Dental Association specification. Hence, steam autoclaving and microwave method can be used as an alternative method to chemical sterilization as an effective method.

  13. Microwave assisted rapid growth of Mg(OH){sub 2} nanosheet networks for ethanol chemical sensor application

    Energy Technology Data Exchange (ETDEWEB)

    Al-Hazmi, Faten [Department of Physics, College of Science, King Abdulaziz University, P.O. Box 80203, Jeddah 21569 (Saudi Arabia); Umar, Ahmad, E-mail: ahmadumar786@gmail.com [Promising Centre for Sensors and Electronic Devices (PCSED) and Centre for Advanced Materials and Nano-Research (CAMNR), Najran University, P.O. Box 1988, Najran 11001 (Saudi Arabia); Dar, G.N. [Promising Centre for Sensors and Electronic Devices (PCSED) and Centre for Advanced Materials and Nano-Research (CAMNR), Najran University, P.O. Box 1988, Najran 11001 (Saudi Arabia); Al-Ghamdi, A.A.; Al-Sayari, S.A. [Department of Physics, College of Science, King Abdulaziz University, P.O. Box 80203, Jeddah 21569 (Saudi Arabia); Al-Hajry, A. [Promising Centre for Sensors and Electronic Devices (PCSED) and Centre for Advanced Materials and Nano-Research (CAMNR), Najran University, P.O. Box 1988, Najran 11001 (Saudi Arabia); Department of Physics, College of Science and Arts, Najran University, P.O. Box 1988, Najran 11001 (Saudi Arabia); Kim, S.H. [Promising Centre for Sensors and Electronic Devices (PCSED) and Centre for Advanced Materials and Nano-Research (CAMNR), Najran University, P.O. Box 1988, Najran 11001 (Saudi Arabia); Al-Tuwirqi, Reem M. [Department of Physics, College of Science, King Abdulaziz University, P.O. Box 80203, Jeddah 21569 (Saudi Arabia); Alnowaiserb, Fowzia [Department of Chemistry, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); El-Tantawy, Farid [Department of Physics, Faculty of Science, Suez Canal University, Ismailia (Egypt)

    2012-04-05

    Highlights: Black-Right-Pointing-Pointer A facile microwave-assisted synthesis and characterizations of magnesium hydroxide (Mg(OH){sub 2}) nanosheet networks. Black-Right-Pointing-Pointer Fabrication of ethanol sensor based on (Mg(OH){sub 2}) nanosheet networks. Black-Right-Pointing-Pointer Good sensitivity ({approx}3.991 {mu}A cm{sup -2} mM{sup -1}) and lower detection limit (5 {mu}M). Black-Right-Pointing-Pointer This research opens a way to utilize Mg(OH){sub 2} nanostructures for chemical sensors applications. - Abstract: This paper reports a facile microwave-assisted synthesis of magnesium hydroxide (Mg(OH){sub 2}) nanosheet networks and their utilization for the fabrication of efficient ethanol chemical sensor. The synthesized nanosheets networks were characterized in terms of their morphological, structural and optical properties using various analysis techniques such as field emission scanning electron microscopy (FESEM), X-ray diffraction pattern (XRD), Fourier transform infrared (FTIR) and UV-Vis spectroscopy. The detailed morphological and structural investigations reveal that the synthesized (Mg(OH){sub 2}) products are nanosheet networks, grown in high density, and possessing hexagonal crystal structure. The optical band gap of as-synthesized Mg(OH){sub 2} nanosheet networks was examined by UV-Vis absorption spectrum, and found to be 5.76 eV. The synthesized nanosheet networks were used as supporting matrices for the fabrication of I-V technique based efficient ethanol chemical sensor. The fabricated ethanol sensor based on nanosheet networks exhibits good sensitivity ({approx}3.991 {mu}A cm{sup -2} mM{sup -1}) and lower detection limit (5 {mu}M), with linearity (R = 0.9925) in short response time (10.0 s). This work demonstrate that the simply synthesized Mg(OH){sub 2} nanosheet networks can effectively be used for the fabrication of efficient ethanol chemical sensors.

  14. Rheological, Chemical and Physical Characteristics of Golden Berry (Physalis peruviana L.) after Convective and Microwave Drying

    OpenAIRE

    Nawirska-Olsza?ska, Agnieszka; St?pie?, Bogdan; Biesiada, Anita; Kolniak-Ostek, Joanna; Oziemb?owski, Maciej

    2017-01-01

    Studies on methods for fixing foods (with a slight loss of bioactive compounds) and obtaining attractive products are important with respect to current technology. The drying process allows for a product with highly bioactive properties. Drying of Physalis fruit was carried out in a conventional manner, and in a microwave under reduced pressure at 120 W and 480 W. After drying, the fruits were subjected to strength and rheological tests. Water activity, content of carotenoids and polyphenols ...

  15. Plasma-enhanced growth, composition, and refractive index of silicon oxy-nitride films

    DEFF Research Database (Denmark)

    Mattsson, Kent Erik

    1995-01-01

    Secondary ion mass spectrometry and refractive index measurements have been carried out on silicon oxy-nitride produced by plasma-enhanced chemical vapor deposition (PECVD). Nitrous oxide and ammonia were added to a constant flow of 2% silane in nitrogen, to produce oxy-nitride films with atomic...... nitrogen concentrations between 2 and 10 at. %. A simple atomic valence model is found to describe both the measured atomic concentrations and published material compositions for silicon oxy-nitride produced by PECVD. A relation between the Si–N bond concentration and the refractive index is found......-product. A model, that combine the chemical net reaction and the stoichiometric rules, is found to agree with measured deposition rates for given material compositions. Effects of annealing in a nitrogen atmosphere has been investigated for the 400 °C– 1100 °C temperature range. It is observed that PECVD oxy...

  16. Cost analysis on a continuously operated fine chemicals production plant at 10 kg/day using a combination of microprocessing and microwave heating

    NARCIS (Netherlands)

    Benaskar, F.; Ben-Abdelmoumen, A.; Patil, N.G.; Rebrov, E.; Meuldijk, J.; Hessel, V.; Hulshof, L.A.; Krtschil, U.; Schouten, J.C.

    2011-01-01

    An extended cost study consisting of 14 process scenarios was carried out to envisage the cost impact of microprocessing and microwaves separately or in combination for two liquid-phase model reactions in fine-chemicals synthesis: (1) Ullmann C–O cross-coupling reaction and (2) the aspirin

  17. Microwave-Assisted Extraction, Chemical Structures, and Chain Conformation of Polysaccharides from a Novel Cordyceps Sinensis Fungus UM01.

    Science.gov (United States)

    Cheong, Kit-Leong; Wang, Lan-Ying; Wu, Ding-Tao; Hu, De-Jun; Zhao, Jing; Li, Shao-Ping

    2016-09-01

    Cordyceps sinensis is a well-known tonic food with broad medicinal properties. The aim of the present study was to investigate the optimization of microwave-assisted extraction (MAE) and characterize chemical structures and chain conformation of polysaccharides from a novel C. sinensis fungus UM01. Ion-exchange and gel filtration chromatography were used to purify the polysaccharides. The chemical structure of purified polysaccharide was determined through gas chromatography-mass spectrometry. Moreover, high performance size exclusion chromatography combined with refractive index detector and multiangle laser light scattering were conducted to analyze the molecular weight (Mw ) and chain conformation of purified polysaccharide. Based on the orthogonal design L9 , optimal MAE conditions could be obtained through 1300 W of microwave power, with a 5-min irradiation time at a solid to water ratio of 1:60, generating the highest extraction yield of 6.20%. Subsequently, the polysaccharide UM01-S1 was purified. The UM01-S1 is a glucan-type polysaccharide with a (1→4)-β-d-glucosyl backbone and branching points located at O-3 of Glcp with a terminal-d-Glcp. The Mw , radius of gyration (Rg ) and hydrodynamic radius (Rh ) of UM01-S1 were determined as 5.442 × 10(6)  Da, 21.8 and 20.2 nm, respectively. Using the polymer solution theory, the exponent (ν) value of the power law function was calculated as 0.38, and the shape factor (ρ = Rg /Rh ) was 1.079, indicating that UM01-S1 has a sphere-like conformation with a branched structure in an aqueous solution. These results provide fundamental information for the future application of polysaccharides from cultured C. sinensis in health and functional food area. © 2016 Institute of Food Technologists®

  18. Microwave, High-Resolution Infrared, and Quantum Chemical Investigations of CHBrF2

    DEFF Research Database (Denmark)

    Cazzoli, Gabriele; Cludi, Lino; Puzzarini, Cristina

    2011-01-01

    terms as well as the hyperfine parameters (quadrupole-coupling and spin-rotation interaction constants) of the bromine nucleus. The determination of the latter was made possible by recording of spectra at sub-Doppler resolution, achieved by means of the Lamb-dip technique, and supporting the spectra......A combined microwave, infrared, and computational investigation of CHBrF2 is reported. For the vibrational ground state, measurements in the millimeter- and sub-millimeter-wave regions for (CHBrF2)-Br-79 and (CHBrF2)-Br-81 provided rotational and centrifugal-distortion constants up to the sextic...... parameters of the v(4) = 1 state were found to be close to those of the vibrational ground state, indicating that the v(4) band is essentially unaffected by perturbations....

  19. Controlled fabrication of the strong emission YVO{sub 4}:Eu{sup 3+} nanoparticles and nanowires by microwave assisted chemical synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Huong, Tran Thu, E-mail: tthuongims@gmail.com [Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Road, Cau Giay District, Hanoi (Viet Nam); Vinh, Le Thi [Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Road, Cau Giay District, Hanoi (Viet Nam); Department of Chemistry, Hanoi University of Mining and Geology (Viet Nam); Phuong, Ha Thi [Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Road, Cau Giay District, Hanoi (Viet Nam); Department of Chemistry, Hanoi University of Medicine (Viet Nam); Khuyen, Hoang Thi [Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Road, Cau Giay District, Hanoi (Viet Nam); Anh, Tran Kim [Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Road, Cau Giay District, Hanoi (Viet Nam); Duy Tan University, 14/25 Quang Trung, Da Nang (Viet Nam); Tu, Vu Duc [Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Road, Cau Giay District, Hanoi (Viet Nam); Physics, National Chung Cheng University, 168 University Road, Min-Hsiung, Chia-Yi 62102, Taiwan (China); Minh, Le Quoc [Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Road, Cau Giay District, Hanoi (Viet Nam); Duy Tan University, 14/25 Quang Trung, Da Nang (Viet Nam)

    2016-05-15

    In this report, we are presenting the controlled fabrication results of the strong emission YVO{sub 4}: Eu{sup 3+} nanoparticles and nanowires by microwave which is assisted chemical synthesis. The effects of incorporated synthesis conditions such as microwave irradiated powers, pH values and concentration of chemical composition on properties of nanomaterials are also investigated to obtain the controllable size and homogenous morphology. Morphological and optical properties of YVO{sub 4}: Eu{sup 3+} prepared products which have been characterized by X-ray diffraction (XRD), field emission micrcroscopy (FESEM) and photoluminescence spectroscopy. As based from result of synthesized samples, we found that the changing of pH values, microwave irradiated powers and chemical composition rise to change reform the size and shape of materials from nanoparticles (diameter about 20 nm) to wires shape (with about 500÷800 nm length and 10÷20 nm width). The photoluminescence (PL) spectroscopy measurements of YVO{sub 4}: Eu{sup 3+} nanostructure materials under UV excitation showed that: the strong luminescence in red region with narrow lines corresponding to the intra-4f transitions of {sup 5}D{sub 0}–{sup 7}F{sub j} (j=1, 2, 3, and 4) of Eu{sup 3+} ions with the highest luminescence intensity of {sup 5}D{sub 0}→{sup 7}F{sub 2} transition. - Highlights: • The strong emission YVO{sub 4}:Eu{sup 3+} nanostructure materials were successfully synthesized by microwave assisted chemical synthesis. • The size, morphology and luminescence of the YVO{sub 4}:Eu{sup 3+} nanostructure materials can be controlled by the solution pH, microwave irradiated powers and chemical composition. • These YVO{sub 4}:Eu{sup 3+} nanostructure materials above can potentially applied in various fields of application, especially in luminescent labeling and visualization in biomedical application.

  20. Fabrication of aligned carbon nanotubes on Cu catalyst by dc plasma-enhanced catalytic decomposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Zhejuan [Department of Physics, Engineering Research Center for Nanophotonics and Advanced Instrument, East China Normal University, North Zhongshan Road 3663, 200062 Shanghai (China); Shakerzadeh, Maziar; Tay, Beng Kang; Li Xiaocheng; Tan Chongwei [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue 50, 639798 Singapore (Singapore); Lin Lifeng; Guo Pingsheng; Feng Tao [Department of Physics, Engineering Research Center for Nanophotonics and Advanced Instrument, East China Normal University, North Zhongshan Road 3663, 200062 Shanghai (China); Sun Zhuo, E-mail: zsun@phy.ecnu.edu.cn [Department of Physics, Engineering Research Center for Nanophotonics and Advanced Instrument, East China Normal University, North Zhongshan Road 3663, 200062 Shanghai (China)

    2009-04-01

    Aligned multi-walled carbon nanotubes (ACNTs) are deposited using copper (Cu) catalyst on Chromium (Cr)-coated substrate by plasma-enhanced chemical vapor deposition at temperature of 700 deg. C. Acetylene gas has been used as the carbon source while ammonia is used for diluting and etching. The thicknesses of Cu films on Cr-coated Si (100) substrates are controlled by deposition time of magnetron sputtering. The growth behaviors and quality of ACNTs are investigated by scanning electron microscopy (SEM) and transmission electron microscopy. The different performance of ACNTs on various Cu films is explained by referring to the graphitic order as detected by Raman spectroscopy. The results indicate that the ACNTs are formed in tip-growth model where Cu is used as a novel catalyst, and the thickness of Cu films is responsible to the diameter and quality of synthesized CNTs.

  1. Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

    Directory of Open Access Journals (Sweden)

    Chia-Man Chou

    2017-07-01

    Full Text Available We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD incorporated with radio-frequency (r.f.-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr. High oxygen vapor pressure (150 mTorr and low r.f. power (10 W are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

  2. Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

    Science.gov (United States)

    Chou, Chia-Man; Lai, Chih-Chang; Chang, Chih-Wei; Wen, Kai-Shin; Hsiao, Vincent K. S.

    2017-07-01

    We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO)-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD) incorporated with radio-frequency (r.f.)-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD)-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC) structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr). High oxygen vapor pressure (150 mTorr) and low r.f. power (10 W) are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

  3. Determining the microwave coupling and operational efficiencies of a microwave plasma assisted chemical vapor deposition reactor under high pressure diamond synthesis operating conditions

    Energy Technology Data Exchange (ETDEWEB)

    Nad, Shreya [Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States); Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824 (United States); Gu, Yajun; Asmussen, Jes [Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States)

    2015-07-15

    The microwave coupling efficiency of the 2.45 GHz, microwave plasma assisted diamond synthesis process is investigated by experimentally measuring the performance of a specific single mode excited, internally tuned microwave plasma reactor. Plasma reactor coupling efficiencies (η) > 90% are achieved over the entire 100–260 Torr pressure range and 1.5–2.4 kW input power diamond synthesis regime. When operating at a specific experimental operating condition, small additional internal tuning adjustments can be made to achieve η > 98%. When the plasma reactor has low empty cavity losses, i.e., the empty cavity quality factor is >1500, then overall microwave discharge coupling efficiencies (η{sub coup}) of >94% can be achieved. A large, safe, and efficient experimental operating regime is identified. Both substrate hot spots and the formation of microwave plasmoids are eliminated when operating within this regime. This investigation suggests that both the reactor design and the reactor process operation must be considered when attempting to lower diamond synthesis electrical energy costs while still enabling a very versatile and flexible operation performance.

  4. Theoretical and experimental study on solid chemical reaction between BaCO3 and TiO2 in microwave field

    International Nuclear Information System (INIS)

    Liu Hanxing; Guo, Liling; Zou Long; Cao Minhe; Zhou Jian; Ouyang Shixi

    2004-01-01

    Solid-state chemical reaction mechanism for the reaction between BaCO 3 and TiO 2 in microwave field was investigated based on X-ray power diffraction (XRD) data and theory of diffusion. The compositions of the resultant after reaction under different conditions were studied by employing XRD. The quantitative analyses based on XRD data showed the reaction in microwave field was quite different from that in the conventional method. A model was proposed to explain the change of the ratio between the reactant BaCO 3 , TiO 2 and the resultant BaTiO 3 for the chemical reaction. The formation kinetic of BaTiO 3 from the BaCO 3 and TiO 2 was calculated by employing this theoretical model. The reaction rate between BaCO 3 and TiO 2 in microwave field was much higher than that in conventional method. The activation energy of the atomic diffusions in this solid chemical reaction is only 58 kJ/mol, which was only about 1/4 of 232 kJ/mol in the conventional value. The result suggests that the microwave field enhance atomic diffusion during the reaction

  5. Plasma Enhanced Growth of Carbon Nanotubes For Ultrasensitive Biosensors

    Science.gov (United States)

    Cassell, Alan M.; Li, J.; Ye, Q.; Koehne, J.; Chen, H.; Meyyappan, M.

    2004-01-01

    The multitude of considerations facing nanostructure growth and integration lends itself to combinatorial optimization approaches. Rapid optimization becomes even more important with wafer-scale growth and integration processes. Here we discuss methodology for developing plasma enhanced CVD growth techniques for achieving individual, vertically aligned carbon nanostructures that show excellent properties as ultrasensitive electrodes for nucleic acid detection. We utilize high throughput strategies for optimizing the upstream and downstream processing and integration of carbon nanotube electrodes as functional elements in various device types. An overview of ultrasensitive carbon nanotube based sensor arrays for electrochemical biosensing applications and the high throughput methodology utilized to combine novel electrode technology with conventional MEMS processing will be presented.

  6. The Effect of Gamma radiation, microwave radiation, their interaction and storage on chemical composition, antinutritional factors and the activities of trypsin inhibitor and lipoxygenase of soybean seeds

    Energy Technology Data Exchange (ETDEWEB)

    Abdel-Rahim, E A; Abdel-Fatah, O M [Dept. of Biochem., Faculty of Agric., Cairo University. (Egypt); El-Adawy, M; Badea, M Y [Food Technol. Dept., National Center for Research and Radiation Technol., Atomic Energy Authority (Egypt)

    2000-07-01

    The effect of gamma radiation, microwave radiation, interaction between them; and storage of radiated soybean seeds were investigated to find out the best treatment which had to the maximum reduction of antinutrional factors (Trypsin inhibitor and lipoxygenase activities) without significant effect on the chemical constituents. The gamma rays was used at three doses of 2.5, 5.0 and 8.0 kGy, microwave radiation was at 70 level power for 2 and 4 min; and the storage of seeds was at temperature, R.H. 50-55% for six months. The data revealed that, effects of interaction treatments were more effective than the treatment with microwave or gamma radiation alone.

  7. The Effect of Gamma radiation, microwave radiation, their interaction and storage on chemical composition, antinutritional factors and the activities of trypsin inhibitor and lipoxygenase of soybean seeds

    International Nuclear Information System (INIS)

    Abdel-Rahim, E.A.; Abdel-Fatah, O.M.; El-Adawy, M.; Badea, M.Y.

    2000-01-01

    The effect of gamma radiation, microwave radiation, interaction between them; and storage of radiated soybean seeds were investigated to find out the best treatment which had to the maximum reduction of antinutrional factors (Trypsin inhibitor and lipoxygenase activities) without significant effect on the chemical constituents. The gamma rays was used at three doses of 2.5, 5.0 and 8.0 kGy, microwave radiation was at 70 level power for 2 and 4 min; and the storage of seeds was at temperature, R.H. 50-55% for six months. The data revealed that, effects of interaction treatments were more effective than the treatment with microwave or gamma radiation alone

  8. Microporous Ni@NiO nanoparticles prepared by chemically dealloying Al_3Ni_2@Al nanoparticles as a high microwave absorption material

    International Nuclear Information System (INIS)

    Pang, Yu; Xie, Xiubo; Li, Da; Chou, Wusheng; Liu, Tong

    2017-01-01

    The Al_3Ni_2@Al nanoparticles (NPs) were prepared from Ni_4_5Al_5_5 master alloy by hydrogen plasma-metal reaction method, and were subsequently dealloyed to produce porous Ni@NiO NPs of 36 nm. The pore size ranges from 0.7 to 1.6 nm, leading to large specific surface area of 69.5 m"2/g and big pore volume of 0.507 cc/g. The saturation magnetization (M_S) and coercivity (H_C) of the microporous Ni@NiO NPs are 11.5 emu/g and 5.2 Oe. They exhibit high microwave absorption performance with a minimum reflection coefficient (RC) of −86.9 dB and an absorption bandwidth of 2.6 GHz (RC≤−10 dB) at thickness of 4.5 mm. The enhanced microwave absorption properties are attributed to the synergistic effect of the magnetic Ni core and dielectric NiO shell, and the micropore architecture. The NPs with micropore morphology and core/shell structure open a new way to modify the microwave absorption performance. - Graphical abstract: The microporous Ni/NiO nanoparticles prepared by chemically dealloying Al_3Ni_2@Al NPs exhibit high microwave absorption intensity (−86.9 dB) and wide absorption bandwidth (2.6 GHz for RC≤−10 dB). - Highlights: • Microporous Ni/NiO nanoparticals were prepared by chemically dealloying method. • They possessed micropores of 0.7–1.6 nm with a surface area of 69.5 m"2/g. • They showed high microwave absorption intensity and wide absorption bandwidth. • Microwave absorption mechanism was explained by micropore and core/shell structures.

  9. Microporous Ni@NiO nanoparticles prepared by chemically dealloying Al{sub 3}Ni{sub 2}@Al nanoparticles as a high microwave absorption material

    Energy Technology Data Exchange (ETDEWEB)

    Pang, Yu; Xie, Xiubo; Li, Da [Key Laboratory of Aerospace Materials and Performance (Ministry of Education), School of Materials Science and Engineering, Beihang University, No.37 Xueyuan Road, Beijing 100191 (China); Chou, Wusheng [School of Mechanical Engineering and Automation, Beihang University, Beijing 100191 (China); Liu, Tong, E-mail: tongliu@buaa.edu.cn [Key Laboratory of Aerospace Materials and Performance (Ministry of Education), School of Materials Science and Engineering, Beihang University, No.37 Xueyuan Road, Beijing 100191 (China)

    2017-03-15

    The Al{sub 3}Ni{sub 2}@Al nanoparticles (NPs) were prepared from Ni{sub 45}Al{sub 55} master alloy by hydrogen plasma-metal reaction method, and were subsequently dealloyed to produce porous Ni@NiO NPs of 36 nm. The pore size ranges from 0.7 to 1.6 nm, leading to large specific surface area of 69.5 m{sup 2}/g and big pore volume of 0.507 cc/g. The saturation magnetization (M{sub S}) and coercivity (H{sub C}) of the microporous Ni@NiO NPs are 11.5 emu/g and 5.2 Oe. They exhibit high microwave absorption performance with a minimum reflection coefficient (RC) of −86.9 dB and an absorption bandwidth of 2.6 GHz (RC≤−10 dB) at thickness of 4.5 mm. The enhanced microwave absorption properties are attributed to the synergistic effect of the magnetic Ni core and dielectric NiO shell, and the micropore architecture. The NPs with micropore morphology and core/shell structure open a new way to modify the microwave absorption performance. - Graphical abstract: The microporous Ni/NiO nanoparticles prepared by chemically dealloying Al{sub 3}Ni{sub 2}@Al NPs exhibit high microwave absorption intensity (−86.9 dB) and wide absorption bandwidth (2.6 GHz for RC≤−10 dB). - Highlights: • Microporous Ni/NiO nanoparticals were prepared by chemically dealloying method. • They possessed micropores of 0.7–1.6 nm with a surface area of 69.5 m{sup 2}/g. • They showed high microwave absorption intensity and wide absorption bandwidth. • Microwave absorption mechanism was explained by micropore and core/shell structures.

  10. Growth and characterization of nanodiamond layers prepared using plasma enhanced linear antennas microwave CVD system

    Czech Academy of Sciences Publication Activity Database

    Fendrych, František; Taylor, Andrew; Peksa, Ladislav; Kratochvílová, Irena; Vlček, J.; Řezáčová, V.; Petrák, V.; Kluiber, Z.; Fekete, Ladislav; Liehr, M.; Nesládek, M.

    2010-01-01

    Roč. 43, č. 37 (2010), 374018/1-374018/6 ISSN 0022-3727 R&D Projects: GA AV ČR KAN200100801; GA AV ČR KAN300100801; GA AV ČR KAN301370701 Institutional research plan: CEZ:AV0Z10100520 Keywords : nanodiamond, * thin films * PE MW CVD * linear antennas Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.105, year: 2010

  11. Low-Pressure H2, NH3 Microwave Plasma Treatment of Polytetrafluoroethylene (PTFE) Powders: Chemical, Thermal and Wettability Analysis

    Science.gov (United States)

    Hunke, Harald; Soin, Navneet; Shah, Tahir H.; Kramer, Erich; Pascual, Alfons; Karuna, Mallampalli Sri Lakshmi; Siores, Elias

    2015-01-01

    Functionalization of Polytetrafluoroethylene (PTFE) powders of ~6 μm particle size is carried out using low-pressure 2.45 GHz H2, NH3 microwave plasmas for various durations (2.5, 10 h) to chemically modify their surface and alter their surface energy. The X-ray Photoelectron Spectroscopy (XPS) analyses reveal that plasma treatment leads to significant defluorination (F/C atomic ratio of 1.13 and 1.30 for 10 h NH3 and H2 plasma treatments, respectively vs. 1.86 for pristine PTFE), along with the incorporation of functional polar moieties on the surface, resulting in enhanced wettability. Analysis of temperature dependent XPS revealed a loss of surface moieties above 200 °C, however, the functional groups are not completely removable even at higher temperatures (>300 °C), thus enabling the use of plasma treated PTFE powders as potential tribological fillers in high temperature engineering polymers. Ageing studies carried over a period of 12 months revealed that while the surface changes degenerate over time, again, they are not completely reversible. These functionalised PTFE powders can be further used for applications into smart, high performance materials such as tribological fillers for engineering polymers and bio-medical, bio-material applications.

  12. Enhanced field emission characteristics of boron doped diamond films grown by microwave plasma assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Koinkar, Pankaj M. [Center for International Cooperation in Engineering Education (CICEE), University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); Patil, Sandip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Kim, Tae-Gyu [Department of Nano System and Process Engineering, Pusan National University, 50 Cheonghak-ri, Samrangjin-eup, Miryang, Gyeongnam, Pusan 627-706 (Korea, Republic of); Yonekura, Daisuke [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); More, Mahendra A., E-mail: mam@physics.unipune.ac.in [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Joag, Dilip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Murakami, Ri-ichi, E-mail: murakami@me.tokushima-u.ac.jp [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan)

    2011-01-01

    Boron doped diamond films were synthesized on silicon substrates by microwave plasma chemical vapor deposition (MPCVD) technique. The effect of B{sub 2}O{sub 3} concentration varied from 1000 to 5000 ppm on the field emission characteristics was examined. The surface morphology and quality of films were characterized by scanning electron microscope (SEM) and Raman spectroscopy. The surface morphology obtained by SEM showed variation from facetted microcrystal covered with nanometric grains to cauliflower of nanocrystalline diamond (NCD) particles with increasing B{sub 2}O{sub 3} concentration. The Raman spectra confirm the formation of NCD films. The field emission properties of NCD films were observed to improve upon increasing boron concentration. The values of the onset field and threshold field are observed to be as low as 0.36 and 0.08 V/{mu}m, respectively. The field emission current stability investigated at the preset value of {approx}1 {mu}A is observed to be good, in each case. The enhanced field emission properties are attributed to the better electrical conductivity coupled with the nanometric features of the diamond films.

  13. A microwave powered sensor assembly for microwave ovens

    DEFF Research Database (Denmark)

    2016-01-01

    The present invention relates to a microwave powered sensor assembly for micro- wave ovens. The microwave powered sensor assembly comprises a microwave antenna for generating an RF antenna signal in response to microwave radiation at a predetermined excitation frequency. A dc power supply circuit...... of the microwave powered sensor assembly is operatively coupled to the RF antenna signal for extracting energy from the RF antenna signal and produce a power supply voltage. A sensor is connected to the power supply voltage and configured to measure a physical or chemical property of a food item under heating...... in a microwave oven chamber....

  14. Tailoring of the morphology and chemical composition of thin organosilane microwave plasma polymer layers on metal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Grundmeier, G.; Thiemann, P.; Carpentier, J.; Shirtcliffe, N.; Stratmann, M

    2004-01-01

    The growth of thin microwave organosilicon plasma polymers on model zinc surfaces was investigated as a function of the film thickness and the oxygen partial pressure during film deposition. The evolution of the topology of the film was studied by atomic force microscopy (AFM). The nano- and micro-roughness was investigated at the inner and the outer surfaces of the plasma polymers. A special etching procedure was developed to reveal the underside of the plasma polymer and thereby its inner surface. Rough films contained voids at the interface, which reduced the polymer/metal contact area. The increase in oxygen partial pressure led to a smoother film growth with a perfect imitation of the substrate topography at the interface. The chemical structure of the films was determined by infrared reflection absorption spectroscopy (IRRAS), X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectroscopy (ToF-SIMS). ToF-SIMS at the outer and the inner surface of the plasma polymers showed that the density of methylsilyl groups increases in the outer surface layer of the plasma polymer and depends on the oxygen partial pressure. The chemical composition of the films could be altered to pure SiO{sub 2} without changing the morphology by using oxygen-plasma post-treatment. This was proved by means of IRRAS and AFM. Chemistry and topology of the films were correlated with the apparent water contact angle. It was found that a linear relationship exists between the nanoscopic roughness of the plasma polymer and the static contact angle of water. Superposition of a nanoscopic roughness of the metal surface and the nanoscopic roughness of methylsilyl-rich films led to ultra-hydrophobic films with water contact angles up to 160 deg.

  15. Microwave Enhanced Reactive Distillation

    NARCIS (Netherlands)

    Altman, E.

    2011-01-01

    The application of electromagnetic irradiation in form of microwaves (MW) has gathered the attention of the scientific community in recent years. MW used as an alternative energy source for chemical syntheses (microwave chemistry) can provide clear advantages over conventional heating methods in

  16. Effect of pre-cooking methods on the chemical and sensory deterioration of ready-to-eat chicken patties during chilled storage and microwave reheating.

    Science.gov (United States)

    Ferreira, Valquíria C S; Morcuende, David; Madruga, Marta S; Hernández-López, Silvia H; Silva, Fábio A P; Ventanas, Sonia; Estévez, Mario

    2016-06-01

    The effects of pre-cooking methods, namely, boiling (BL), roasting (RT) and grilling (GR), refrigerated storage (14 days/+4 °C) and microwave reheating on chicken patties were studied. Physical, chemical and sensory parameters were evaluated in order to correlate the chemical deterioration of ready-to-eat chicken patties with the acceptance of the odor. Chemical deterioration was evaluated through the chemical composition, Maillard compounds, Thiobarbituric acid-reactive substances (TBARS) and volatiles. Sensory deterioration (odor liking) was performed by an acceptance test with hedonic scale. According to the TBARS values and volatile compounds generated in the head space during the examined stages, the pre-cooking method and the storage time had a significant effect on lipid oxidation, whereas reheating in a microwave had a negligible impact. At each succeeding processing stage, panelists gave lower odor scores to all samples and no significant differences were found between treatments at any stage. RT and GR patties showed less intense chemical changes and presented higher acceptation scores by the sensory panel than BL patties. Thus, the choice of pre-cooking method and control of storage conditions plays a key role in the inhibition of oxidative changes in ready-to-eat chicken patties.

  17. Microwave Ovens

    Science.gov (United States)

    ... Products and Procedures Home, Business, and Entertainment Products Microwave Ovens Share Tweet Linkedin Pin it More sharing ... 1030.10 - Microwave Ovens Required Reports for the Microwave Oven Manufacturers or Industry Exemption from Certain Reporting ...

  18. Microwave engineering

    CERN Document Server

    Pozar, David M

    2012-01-01

    The 4th edition of this classic text provides a thorough coverage of RF and microwave engineering concepts, starting from fundamental principles of electrical engineering, with applications to microwave circuits and devices of practical importance.  Coverage includes microwave network analysis, impedance matching, directional couplers and hybrids, microwave filters, ferrite devices, noise, nonlinear effects, and the design of microwave oscillators, amplifiers, and mixers. Material on microwave and RF systems includes wireless communications, radar, radiometry, and radiation hazards. A large

  19. Effect of Passivation on Microwave Power Performances of AlGaN/GaN/Si HEMTs

    Directory of Open Access Journals (Sweden)

    H. MOSBAHI

    2014-05-01

    Full Text Available This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors (HEMTs grown on silicon substrate. Surface passivation effects on AlGaN/GaN HEMTs were studied using SiO2/SiN dielectric layers grown by plasma enhanced chemical vapor deposition. The direct current measurement, pulsed characteristics and microwave small-signal characteristics were studied before and after passivation. An improvement of drain-source current density and the extrinsic transconductance was observed on the passivated HEMTs when compared with the unpassivated HEMTs. An enhancement of cut-off frequency (ft and maximum power gain (fmax was also observed for the devices with full SiO2/SiN passivation. A good correlation is found between pulsed and power measurements.

  20. Branched carbon nanofiber network synthesis at room temperature using radio frequency supported microwave plasmas

    International Nuclear Information System (INIS)

    Boskovic, Bojan O.; Stolojan, Vlad; Zeze, Dagou A.; Forrest, Roy D.; Silva, S. Ravi P.; Haq, Sajad

    2004-01-01

    Carbon nanofibers have been grown at room temperature using a combination of radio frequency and microwave assisted plasma-enhanced chemical vapor deposition. The nanofibers were grown, using Ni powder catalyst, onto substrates kept at room temperature by using a purposely designed water-cooled sample holder. Branched carbon nanofiber growth was obtained without using a template resulting in interconnected carbon nanofiber network formation on substrates held at room temperature. This method would allow room-temperature direct synthesized nanofiber networks over relatively large areas, for a range of temperature sensitive substrates, such as organic materials, plastics, and other polymers of interest for nanoelectronic two-dimensional networks, nanoelectromechanical devices, nanoactuators, and composite materials

  1. Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition

    CERN Document Server

    Kim, H

    2002-01-01

    We have investigated the growth kinetics of plasma-enhanced Ti atomic layer deposition (ALD) using a quartz crystal microbalance. Ti ALD films were grown at temperatures from 20 to 200 deg. C using TiCl sub 4 as a source gas and rf plasma-produced atomic H as the reducing agent. Postdeposition ex situ chemical analyses of thin films showed that the main impurity is oxygen, mostly incorporated during the air exposure prior to analysis. The thickness per cycle, corresponding to the growth rate, was measured by quartz crystal microbalance as a function of various key growth parameters, including TiCl sub 4 and H exposure time, rf plasma power, and sample temperature. The growth rates were independent of TiCl sub 4 exposure above 1x10 sup 3 L, indicating typical ALD mode growth. The key kinetic parameters for Cl extraction reaction and TiCl sub 4 adsorption kinetics were obtained and the growth kinetics were modeled to predict the growth rates based upon these results. Also, the dependency of growth kinetics on d...

  2. Microwaves and chemical synthesis

    International Nuclear Information System (INIS)

    Parodi, F.

    1999-01-01

    The article summarizes, through some key references, the most important aspects of the theme, focusing, in particular, on the achievable advantages by the application of this clean and efficient technology (whose big potentialities open wide future developments) to the fields of polymerization processes and organic syntheses [it

  3. The Effect of Selected Fruit Juice Concentrates Used as Osmotic Agents on the Drying Kinetics and Chemical Properties of Vacuum-Microwave Drying of Pumpkin

    Directory of Open Access Journals (Sweden)

    Krzysztof Lech

    2018-01-01

    Full Text Available The study examined the osmotic dehydration of pumpkin slices in chokeberry, flowering quince, and raspberry concentrated juices. Products obtained were subjected to vacuum-microwave finish drying (VMD. The objective of the study was to evaluate the drying kinetics and the chemical properties, that is, total polyphenolics content and antioxidant capacity of the vacuum-microwave-dried pumpkin products. The concentration and temperature of the juices were 40°Brix and 45°C, respectively. The pumpkin slices were pretreated in concentrated juices for 0.5, 1, 2, 3, and 6 hours. Vacuum-microwave finish drying was carried out at the power of magnetrons that ensured the maintenance of the safe temperature (below 90°C of the slices measured with the use of infrared camera. The results of the study showed that the moisture content of samples during the pretreatment in concentrated juices was decreasing until the equilibrium stage. The logarithmic model was used to describe the drying kinetics of pumpkin during VMD. Osmotic pretreatment resulted in a decrease in colour coordinates, improved the antioxidant activity of dried product, and prolonged the duration of VMD.

  4. Lithium-ions diffusion kinetic in LiFePO4/carbon nanoparticles synthesized by microwave plasma chemical vapor deposition for lithium-ion batteries

    Science.gov (United States)

    Gao, Chao; Zhou, Jian; Liu, Guizhen; Wang, Lin

    2018-03-01

    Olivine structure LiFePO4/carbon nanoparticles are synthesized successfully using a microwave plasma chemical vapor deposition (MPCVD) method. Microwave is an effective method to synthesize nanomaterials, the LiFePO4/carbon nanoparticles with high crystallinity can shorten diffusion routes for ionic transfer and electron tunneling. Meanwhile, a high quality, complete and homogenous carbon layer with appropriate thickness coating on the surface of LiFePO4 particles during in situ chemical vapor deposition process, which can ensure that electrons are able to transfer fast enough from all sides. Electrochemical impedance spectroscopy (EIS) is carried out to collect information about the kinetic behavior of lithium diffusion in LiFePO4/carbon nanoparticles during the charging and discharging processes. The chemical diffusion coefficients of lithium ions, DLi, are calculated in the range of 10-15-10-9 cm2s-1. Nanoscale LiFePO4/carbon particles show the longer regions of the faster solid-solution diffusion, and corresponding to the narrower region of the slower two-phase diffusion during the insertion/exaction of lithium ions. The CV and galvanostatic charge-discharge measurements show that the LiFePO4/carbon nanoparticles perform an excellent electrochemical performance, especially the high rate capacity and cycle life.

  5. [EVALUATION OF CHANGES OF GEOMETRICAL PARAMETERS OF ALGINATE DENTAL IMPRESSIONS DUE TO THE INFLUENCE OF CHEMICAL AND MICROWAVE DISINFECTION METHOD USING 3D TECHNOLOGIES].

    Science.gov (United States)

    Nespraydko, V P; Shevchuk, V A; Michaylov, A A; Lyseyko, N V

    2015-01-01

    This clinical and laboratory study evaluated the effect of two methods of disinfection in different modes at the volume changes of alginate dental impressions and plaster models poured from them, as compared to the same parameters of plastic master models (PMM), using three-dimensional non-contact laser scanner and software. Immersion chemical disinfection for 15 min, microwave disinfection at 354 W for 10 minutes and combined disinfection with the power of 319 W for 4 minutes did not significantly affect the volumetric dimensional accuracy of the alginate impressions (P > 0.05).

  6. Influence of variation in the concentration of ammonium hydroxide on the size of ZnO crystal obtained by Microwave Chemical Bath Deposition

    International Nuclear Information System (INIS)

    Galeazzi, R; Díaz, T; García, G; Rivera, B L; Rosendo, E; López, R; Morales, N; González, C M

    2013-01-01

    Films of good crystalline quality of ZnO were successfully prepared using the microwave chemical bath deposition method at a temperature of 80 °C. Concentration of the basic precursor was varied systematically in order to obtain different degrees of acidity in the precursor solutions. Increasing the pH causes an increase in yield. This increase is reflected on the thickness of the deposit. The results of atomic force microscopy (AFM) show an increase in particle size with increasing pH in agreement with the results obtained by profilometry.

  7. Microwave imaging

    CERN Document Server

    Pastorino, Matteo

    2010-01-01

    An introduction to the most relevant theoretical and algorithmic aspects of modern microwave imaging approaches Microwave imaging-a technique used in sensing a given scene by means of interrogating microwaves-has recently proven its usefulness in providing excellent diagnostic capabilities in several areas, including civil and industrial engineering, nondestructive testing and evaluation, geophysical prospecting, and biomedical engineering. Microwave Imaging offers comprehensive descriptions of the most important techniques so far proposed for short-range microwave imaging-in

  8. Preparation of highly photocatalytic active CdS/TiO{sub 2} nanocomposites by combining chemical bath deposition and microwave-assisted hydrothermal synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Li, Li, E-mail: qqhrll@163.com [College of Materials Science and Engineering, Qiqihar University, Qiqihar 161006 (China); Key Laboratory of Composite Modified Material of Colleges in Heilongjiang Province, Qiqihar 161006 (China); Wang, Lili [College of Materials Science and Engineering, Qiqihar University, Qiqihar 161006 (China); Hu, Tianyu [College of Environment and Resources, Jilin University, Changchun 130024 (China); Zhang, Wenzhi; Zhang, Xiuli; Chen, Xi [College of Materials Science and Engineering, Qiqihar University, Qiqihar 161006 (China)

    2014-10-15

    CdS/TiO{sub 2} nanocomposites were prepared from Cd and Ti (1:1 M ratio) using cetyltrimethylammonium bromide by a two-step chemical bath deposition (CBD) and microwave-assisted hydrothermal synthesis (MAHS) method. A series of nanocomposites with different morphologies and activities were prepared by varying the reaction time in the MAHS (2, 4, and 6 h). The crystal structure, morphology, and surface physicochemical properties of the nanocomposites were characterized by X-ray diffraction, UV–visible diffuse reflectance spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, and N{sub 2} adsorption–desorption measurements. The results show that the CdS/TiO{sub 2} nanocomposites were composed of anatase TiO{sub 2} and hexagonal CdS phases with strong absorption in the visible region. The surface morphologies changed slightly with increasing microwave irradiation time, while the Brunauer–Emmett–Teller surface area increased remarkably. The photocatalytic degradation of methyl orange (MO) was investigated under UV light and simulated sunlight irradiation. The photocatalytic activity of the CdS/TiO{sub 2} (6 h) composites prepared by the MAHS method was higher than those of CdS, P25, and other CdS/TiO{sub 2} nanocomposites. The CdS/TiO{sub 2} (6 h) nanocomposites significantly affected the UV and microwave-assisted photocatalytic degradation of different dyes. To elucidate the photocatalytic reaction mechanism for the CdS/TiO{sub 2} nanocomposites, controlled experiments were performed by adding different radical scavengers. - Graphical abstract: CdS/TiO{sub 2} nanocomposites were prepared using CTAB by CBD combined with MAHS method. In addition, with increasing microwave irradiation time, the morphology of CdS/TiO{sub 2} changed from popcorn-like to wedge-like structure. - Highlights: • The CdS/TiO{sub 2} was prepared by CBD combined with MAHS two-step method under CTAB. • The morphologies of as-samples were different with the time of

  9. Microwave plasma induced surface modification of diamond-like carbon films

    Science.gov (United States)

    Rao Polaki, Shyamala; Kumar, Niranjan; Gopala Krishna, Nanda; Madapu, Kishore; Kamruddin, Mohamed; Dash, Sitaram; Tyagi, Ashok Kumar

    2017-12-01

    Tailoring the surface of diamond-like carbon (DLC) film is technically relevant for altering the physical and chemical properties, desirable for useful applications. A physically smooth and sp3 dominated DLC film with tetrahedral coordination was prepared by plasma-enhanced chemical vapor deposition technique. The surface of the DLC film was exposed to hydrogen, oxygen and nitrogen plasma for physical and chemical modifications. The surface modification was based on the concept of adsorption-desorption of plasma species and surface entities of films. Energetic chemical species of microwave plasma are adsorbed, leading to desorbtion of the surface carbon atoms due to energy and momentum exchange. The interaction of such reactive species with DLC films enhanced the roughness, surface defects and dangling bonds of carbon atoms. Adsorbed hydrogen, oxygen and nitrogen formed a covalent network while saturating the dangling carbon bonds around the tetrahedral sp3 valency. The modified surface chemical affinity depends upon the charge carriers and electron covalency of the adsorbed atoms. The contact angle of chemically reconstructed surface increases when a water droplet interacts either through hydrogen or van dear Waals bonding. These weak interactions influenced the wetting property of the DLC surface to a great extent.

  10. SiO2 films deposited on silicon at low temperature by plasma-enhanced decomposition of hexamethyldisilazane: Defect characterization

    International Nuclear Information System (INIS)

    Croci, S.; Pecheur, A.; Autran, J.L.; Vedda, A.; Caccavale, F.; Martini, M.; Spinolo, G.

    2001-01-01

    Silicon dioxide films have been deposited by plasma-enhanced chemical vapor deposition at low substrate temperature (50 deg. C) in a parallel-plate reactor using hexamethyldisilazane (HMDS), diluted in He, and O 2 as Si and O precursors. The effect of the O 2 /(HMDS+He) flow rate ratio on the oxide properties has been investigated in the range of 0.05-1.25 by means of deposition rate, wet etching rate, secondary ion mass spectrometry, thermally stimulated luminescence, and high frequency capacitance-voltage measurements. Both the deposition rate and the etching rate increase by increasing the O 2 /(HMDS+He) flow rate ratio and reach a constant value at flow rate ratios higher than 0.6. The strong increase and saturation in the deposition rate can be attributed to the impinging oxide atoms flux and to the consumption of silyl radicals at the deposition surface, respectively. The Si/SiO 2 interface state density and the positive fixed charge density are in the range 1x10 11 -1x10 12 eV -1 cm -2 and 6x10 11 -1.5x10 12 C cm -2 , respectively. These concentrations are comparable with literature data concerning SiO 2 films obtained by plasma enhanced chemical vapor deposition at temperatures higher than 200 deg. C using other Si precursors. Moreover, the interface state density decreases while the fixed oxide charge increases by increasing the O 2 /(HMDS+He) flow rate ratio. A correlation has been found between defects monitored by thermally stimulated luminescence and fixed oxide charges. From a comparison with secondary ion mass spectrometry results, the fixed oxide charges can be preliminarily attributed to intrinsic defects

  11. The Barrier Properties of PET Coated DLC Film Deposited by Microwave Surface-Wave PECVD

    Science.gov (United States)

    Yin, Lianhua; Chen, Qiang

    2017-12-01

    In this paper we report the investigation of diamond-like carbon (DLC) deposited by microwave surface-wave plasma enhanced chemical vapor deposition (PECVD) on the polyethylene terephthalate (PET) web for the purpose of the barrier property improvement. In order to characterize the properties of DLC coatings, we used several substrates, silicon wafer, glass, and PET web and KBr tablet. The deposition rate was obtained by surface profiler based on the DLC deposited on glass substrates; Fourier transform infrared spectroscope (FTIR) was carried out on KBr tablets to investigate chemical composition and bonding structure; the morphology of the DLC coating was analyzed by atomic force microscope (AFM) on Si substrates. For the barrier properties of PET webs, we measured the oxygen transmission rate (OTR) and water vapor transmission rate (WVTR) after coated with DLC films. We addressed the film barrier property related to process parameters, such as microwave power and pulse parameter in this work. The results show that the DLC coatings can greatly improve the barrier properties of PET webs.

  12. Graphene Synthesis by Plasma-Enhanced CVD Growth with Ethanol

    OpenAIRE

    Campo, T.; Cotto, M.; Márquez, F.; Elizalde, E.; Morant, C.

    2016-01-01

    A modified route to synthesize graphene flakes is proposed using the Chemical Vapor Deposition (CVD) technique, by using copper substrates as supports. The carbon source used was ethanol, the synthesis temperature was 950°C and the pressure was controlled along the whole process. In this CVD synthesis process the incorporation of the carbon source was produced at low pressure and 950°C inducing the appearance of a plasma blue flash inside the quartz tube. Apparently, the presence of this plas...

  13. Microwave Irradiation

    Indian Academy of Sciences (India)

    Way to Eco-friendly, Green Chemistry. Rashmi ... The rapid heating of food in the kitchen using microwave ovens ... analysis; application to waste treatment; polymer technology; ... of microwave heating in organic synthesis since the first contri-.

  14. Performance of a novel microwave-based treatment technology for atrazine removal and destruction: Sorbent reusability and chemical stability, and effect of water matrices

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Erdan; Hu, Yuanan [State Key Laboratory of Organic Geochemistry, Guangzhou Institute of Geochemistry, Chinese Academy of Sciences, Guangzhou 510640 (China); Cheng, Hefa, E-mail: hefac@umich.edu [State Key Laboratory of Organic Geochemistry, Guangzhou Institute of Geochemistry, Chinese Academy of Sciences, Guangzhou 510640 (China); MOE Laboratory for Earth Surface Processes, College of Urban and Environmental Sciences, Peking University, Beijing 100871 (China)

    2015-12-15

    Highlights: • Cu{sup 2+} and Fe{sup 3+} in zeolite pores enhance atrazine sorption and MW-induced degradation. • Exchanged zeolites perform well over multiple sorption–regeneration cycles. • Fe{sup 3+} species in the zeolite micropores have much greater stability than those of Cu{sup 2+}. • DOC in natural waters can compromise the sorption capacity of exchanged zeolites. • Iron-exchanged dealuminated Y zeolites hold great promise for practical applications. - Abstract: Transition metal-exchanged dealuminated Y zeolites were used to adsorb atrazine from aqueous solutions, followed by regeneration of the sorbents and destruction of the sorbed atrazine with microwave irradiation. Exchange of copper and iron into the zeolite's micropores significantly enhanced its sorption capacity and selectivity toward atrazine, and increased the microwave-induced degradation rate of the sorbed atrazine by 3–4-folds. Both the copper- and iron-exchanged zeolites could be regenerated and reused multiple times, while the catalytic activity of the latter was more robust due to the much greater chemical stability of Fe{sup 3+} species in the micropores. The presence of humic acid, and common cations and anions had little impact on the sorption of atrazine on the transition metal-exchanged zeolites. In the treatment of atrazine spiked in natural surface water and groundwater samples, sorptive removal of atrazine was found to be impacted by the level of dissolved organic carbon, probably through competition for the micropore spaces and pore blocking, while the water matrices exhibited no strong effect on the microwave-induced degradation of sorbed atrazine. Overall, iron-exchanged dealuminated Y zeolites show great potential for removal and destruction of atrazine from contaminated surface water and groundwater in practical implementation of the novel treatment technology.

  15. Performance of a novel microwave-based treatment technology for atrazine removal and destruction: Sorbent reusability and chemical stability, and effect of water matrices

    International Nuclear Information System (INIS)

    Hu, Erdan; Hu, Yuanan; Cheng, Hefa

    2015-01-01

    Highlights: • Cu"2"+ and Fe"3"+ in zeolite pores enhance atrazine sorption and MW-induced degradation. • Exchanged zeolites perform well over multiple sorption–regeneration cycles. • Fe"3"+ species in the zeolite micropores have much greater stability than those of Cu"2"+. • DOC in natural waters can compromise the sorption capacity of exchanged zeolites. • Iron-exchanged dealuminated Y zeolites hold great promise for practical applications. - Abstract: Transition metal-exchanged dealuminated Y zeolites were used to adsorb atrazine from aqueous solutions, followed by regeneration of the sorbents and destruction of the sorbed atrazine with microwave irradiation. Exchange of copper and iron into the zeolite's micropores significantly enhanced its sorption capacity and selectivity toward atrazine, and increased the microwave-induced degradation rate of the sorbed atrazine by 3–4-folds. Both the copper- and iron-exchanged zeolites could be regenerated and reused multiple times, while the catalytic activity of the latter was more robust due to the much greater chemical stability of Fe"3"+ species in the micropores. The presence of humic acid, and common cations and anions had little impact on the sorption of atrazine on the transition metal-exchanged zeolites. In the treatment of atrazine spiked in natural surface water and groundwater samples, sorptive removal of atrazine was found to be impacted by the level of dissolved organic carbon, probably through competition for the micropore spaces and pore blocking, while the water matrices exhibited no strong effect on the microwave-induced degradation of sorbed atrazine. Overall, iron-exchanged dealuminated Y zeolites show great potential for removal and destruction of atrazine from contaminated surface water and groundwater in practical implementation of the novel treatment technology.

  16. PROGRAMMING THE MICROWAVE-OVEN

    NARCIS (Netherlands)

    KOK, LP; VISSER, PE; BOON, ME

    1994-01-01

    Microwaves can be used to stimulate chemical bonding, diffusion of reagents into and out of the specimen, and coagulation processes in preparatory techniques. Temperature plays an important role in these processes. There are several ways of controlling the temperature of microwave-exposed tissue,

  17. Patterned deposition by atmospheric pressure plasma-enhanced spatial atomic layer deposition

    NARCIS (Netherlands)

    Poodt, P.; Kniknie, B.J.; Branca, A.; Winands, G.J.J.; Roozeboom, F.

    2011-01-01

    An atmospheric pressure plasma enhanced atomic layer deposition reactor has been developed, to deposit Al2O3 films from trimethyl aluminum and an He/O2 plasma. This technique can be used for 2D patterned deposition in a single in-line process by making use of switched localized plasma sources. It

  18. Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition

    KAUST Repository

    Zhao, Chao; Hedhili, Mohamed N.; Li, Jingqi; Wang, Qingxiao; Yang, Yang; Chen, Long; LI, LIANG

    2013-01-01

    The growth of TiO2 films by plasma enhanced atomic layer deposition using Star-Ti as a precursor has been systematically studied. The conversion from amorphous to crystalline TiO2 was observed either during high temperature growth or annealing

  19. Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition

    NARCIS (Netherlands)

    O'Donoghue, R.; Rechmann, J.; Aghaee, M.; Rogalla, D.; Becker, H.-W.; Creatore, M.; Wieck, A.D.; Devi, A.P.K.

    2017-01-01

    Herein we describe an efficient low temperature (60–160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga2O3) thin films using hexakis(dimethylamido)digallium [Ga(NMe2)3]2 with oxygen (O2) plasma on Si(100). The use of O2 plasma was found to have a significant

  20. Plasma enhanced atomic layer deposited MoOx emitters for silicon heterojunction solar cells

    OpenAIRE

    Ziegler, J.; Mews, M.; Kaufmann, K.; Schneider, T.; Sprafke, A.N.; Korte, L.; Wehrsporn, R.B

    2015-01-01

    A method for the deposition of molybdenum oxide MoOx with high growth rates at temperatures below 200 C based on plasma enhanced atomic layer deposition is presented. The stoichiometry of the overstoichiometric MoOx films can be adjusted by the plasma parameters. First results of these layers acting as hole selective contacts in silicon heterojunction solar cells are presented and discussed

  1. Optimization of biodiesel production process from soybean oil using the sodium potassium tartrate doped zirconia catalyst under Microwave Chemical Reactor.

    Science.gov (United States)

    Li, Yihuai; Ye, Bin; Shen, Jiaowen; Tian, Zhen; Wang, Lijun; Zhu, Luping; Ma, Teng; Yang, Dongya; Qiu, Fengxian

    2013-06-01

    A solid base catalyst was prepared by the sodium potassium tartrate doped zirconia and microwave assisted transesterification of soybean oil was carried out for the production of biodiesel. It was found that the catalyst of 2.0(n(Na)/n(Zr)) and calcined at 600°C showed the optimum activity. The base strength of the catalysts was tested by the Hammett indicator method, and the results showed that the fatty acid methyl ester (FAME) yield was related to their total basicity. The catalyst was also characterized by FTIR, TGA, XRD and TEM. The experimental results showed that a 2.0:1 volume ratio of methanol to oil, 65°C reaction temperature, 30 min reaction time and 10 wt.% catalyst amount gave the highest the yield of biodiesel. Compared to conventional method, the reaction time of the way of microwave assisted transesterification was shorter. The catalyst had longer lifetime and maintained sustained activity after being used for four cycles. Copyright © 2013 Elsevier Ltd. All rights reserved.

  2. Microwave Plasma Chemical Vapor Deposition of Nano-Structured Sn/C Composite Thin-Film Anodes for Li-ion Batteries

    Energy Technology Data Exchange (ETDEWEB)

    Stevenson, Cynthia; Marcinek, M.; Hardwick, L.J.; Richardson, T.J.; Song, X.; Kostecki, R.

    2008-02-01

    In this paper we report results of a novel synthesis method of thin-film composite Sn/C anodes for lithium batteries. Thin layers of graphitic carbon decorated with uniformly distributed Sn nanoparticles were synthesized from a solid organic precursor Sn(IV) tert-butoxide by a one step microwave plasma chemical vapor deposition (MPCVD). The thin-film Sn/C electrodes were electrochemically tested in lithium half cells and produced a reversible capacity of 440 and 297 mAhg{sup -1} at C/25 and 5C discharge rates, respectively. A long term cycling of the Sn/C nanocomposite anodes showed 40% capacity loss after 500 cycles at 1C rate.

  3. Growth and characterization of ZnO films deposited by chemical bath and annealed by microwaves (CBD-A{mu}W)

    Energy Technology Data Exchange (ETDEWEB)

    DIaz-Reyes, J [CIBA-IPN, Ex-Hacienda de San Juan Molino, Km. 1.5, Tepetitla, Tlaxcala, 90700 (Mexico); Martinez-Juarez, J; Garcia, M L; Galeazzi, R [CIDS-ICUAP, BUAP, 14 Sur y San Claudio S/N, CU. Edif. No. 137, Col. San Manuel, Puebla, Puebla 72570 (Mexico); Juarez, G, E-mail: jdiazr2001@yahoo.com [DIE-SEES, CINVESTAV-IPN, A. P. 14-740, Mexico, D. F. 07000 (Mexico)

    2010-06-15

    A study of the growth and the physical properties of ZnO films deposited by chemical bath technique and annealed by microwave are presented. For the deposition solution the molar ratio between zinc nitrate and urea is varied in a range of 1:1... 1:10. By X-ray obtains that layers have hexagonal polycrystalline wurtzite type unitary cell. The Raman spectra show the first order experimental Raman spectra of ZnO. The first order Raman modes are identified in the ZnO Raman spectra. The 300K photoluminescence shows radiative bands labelled by red, yellow, green and violet bands, which are associated to defects of oxygen and zinc vacancies. By EDS measurements determined their stoichiometry, which allows relating it with the intensity of radiative bands associated to oxygen and zinc vacancies.

  4. A Systematic Study of the Relationship among the Morphological, Structural and Photoelectrochemical Properties of ZnO Nanorods Grown Using the Microwave Chemical Bath Deposition Method

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Sungjin; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2017-08-15

    In this study, zinc oxide (ZnO) nanostructures were grown on a ZnO seed layer/fluorine-doped tin oxide (FTO) substrate for different growth durations ranging from 5 to 40 min using the microwave chemical bath deposition method. We studied the effect of growth duration on the morphological, structural, optical and photoelectrochemical properties of the ZnO nanostructures. From this study, we found that the photoelectrochemical properties of the ZnO nanostructures were largely affected by their morphological and structural properties. As a result, we obtained the highest photocurrent density of 0.46 mA/cm{sup 2} (at 1.5 V vs. SCE) from the sample grown for 30 min.

  5. Essential Oils Extracted Using Microwave-Assisted Hydrodistillation from Aerial Parts of Eleven Artemisia Species: Chemical Compositions and Diversities in Different Geographical Regions of Iran

    Directory of Open Access Journals (Sweden)

    Majid Mohammadhosseini

    2017-03-01

    Full Text Available This study aimed to assess the chemical compositions of essential oils (EOs extracted through microwave-assisted hydrodistillation from aerial parts of 11 Artemisia species growing wild in different regions in Northern, Eastern, Western, and Central parts of Iran. The EOs were subsequently analyzed via GC and GC-MS. The percentage yields of the EOs varied over the range of 0.21-0.50 (w/w%. On the basis of these characterizations and spectral assignments, natural compounds including camphor, 1,8-cineole, camphene, α-pinene, β-pinene, β-thujone, and sabinene were the most abundant and frequent constituents among all studied chemical profiles. Accordingly, oxygenated monoterpenes, monoterpene hydrocarbons, and non-terpene hydrocarbons were the dominant groups of natural compounds in the chemical profiles of 13, 4, and 2 samples, respectively. Moreover, five chemotypes were identified using statistical analyses: camphene, α-pinene and β-pinene; 1,8-cineole; camphore and 1,8-cineole; camphore and camphore and β-thujone.

  6. Buckyball microwave plasmas: Fragmentation and diamond-film growth

    International Nuclear Information System (INIS)

    Gruen, D.M.; Liu, Shengzhong; Krauss, A.R.; Pan, Xianzheng.

    1993-08-01

    Microwave discharges (2.45 GHz) have been generated in C 60 -containing Ar produced by flowing Ar over fullerene-containing soot. Optical spectroscopy shows that the spectrum is dominated by the d 3 Πg-a 3 Πu Swan bands of C 2 and particularly the Δv = -2, -1, 0, +1, and +2 sequences. These results give direct evidence that C 2 is one of the products of C 60 fragmentation brought about, at least in part, by collisionally induced dissociation (CID). C 60 has been used as a precursor in a plasma-enhanced chemical vapor deposition (PECVD) experiment to grow diamond-thin films. The films, grown in an Ar/H 2 gas mixture (0.14% carbon content, 100 Torr, 20 sccm Ar, 4 sccm H 2 , 1500 W, 850 degree C substrate temperature), were characterized with SEM, XRD, and Raman spectroscopy. Growth rate was found to be ∼ 0.6 μ/hr. Assuming a linear dependence on carbon concentration, a growth rate at least six times higher than commonly observed using methane as a precursor, would be predicted at a carbon content of 1% based on C 60 . Energetic and mechanistic arguments are advanced to rationalize this result based on C 2 as the growth species

  7. Synthesis of Carbon Nanomaterials from Rice Husk via Microwave Oven

    Directory of Open Access Journals (Sweden)

    Muhammad Asnawi

    2018-01-01

    Full Text Available Microwave oven was utilized to fabricate carbon nanostructure, specifically CNTs, from waste RH powders. It has been shown that the use of carbon source, catalyst, and commercial microwave oven to induce plasma is necessary to carry on this synthesis. The plasma enhances and speeds up the catalytic decomposition of RH in presence of ferrocene. FESEM, TGA, and Raman spectroscopy were utilized to confirm the presence and quality of produced carbon nanomaterials. In addition, these results suggest the conversion of ferrocene to iron(II, III oxide with notable conversion rate.

  8. Plasma enhanced chemical vapor deposition of ZrO2 thin films

    Energy Technology Data Exchange (ETDEWEB)

    Saravanan, Kolandaivelu [Iowa State Univ., Ames, IA (United States)

    1993-12-09

    Amorphous ZrO2 thin films were deposited in an inductively coupled PECVD system using a Zr β-diketonate, Zr(C11H19O2)4, as the precursor. The deposits were air annealed at 900C for 5 min to get pure, single phase, oriented, polycrystalline α-ZrO2. Feasibility of using 2 different types of reactors was investigated. The inductively heated horizontal reactor depositions at 600C had a lower deposition rate and the films were non-uniform in thickness with a columnar structure. The resistively heated vertical reactor depositions at 350C had a higher deposition rate and the films were more uniform in thickness with a fine grained microstructure. The statistical design was demonstrated as an effective technique to analyze the effect of process conditions on the rate of deposition and relative (h00) orientation. The factorial design was used to quantify the two responses in terms of the process variables and their mutual interactions. The statistical design for rate of deposition was found to correlate with the trends observed in classical design.

  9. A study of luminescence from silicon-rich silica fabricated by plasma enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Trwoga, P.F.

    1998-01-01

    Silicon is the most studied electronic material known to man and dominates the electronics industry in its use as a semiconductors for nearly all integrated electronics. However, optoelectronics is almost entirely based on III-V materials. This technology is used because silicon is a very inefficient light source, whereas the III-V band structure can lend itself to efficient light emission by electron injection. However, due to the overwhelming dominance of silicon based electronics it is still a highly desirable goal to generate light efficiently from silicon based materials. Recently, studies have demonstrated that efficient visible luminescence can be obtained from certain novel forms of silicon. These materials include porous silicon, hydrogenated amorphous silicon, and silicon-rich silica (SiO x x x is studied in detail; in addition, electroluminescence and rare-earth doping of silicon-rich silica is also addressed. (author)

  10. Protective double-layer coatings prepared by plasma enhanced chemical vapor deposition on tool steel

    Czech Academy of Sciences Publication Activity Database

    Muresan, M.; Charvátová Campbell, A.; Ondračka, P.; Buršíková, V.; Peřina, Vratislav; Polcar, T.; Reuter, S.; Hammer, M. U.; Valtr, M.; Zajíčková, L.

    2015-01-01

    Roč. 272, JUN (2015), s. 229-238 ISSN 0257-8972 R&D Projects: GA MŠk LM2011019 Institutional support: RVO:61389005 Keywords : PECVD * DLC * amorphous carbon * hardness Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 2.139, year: 2015

  11. Ultrasharp Si nanowires produced by plasma-enhanced chemical vapor deposition

    Czech Academy of Sciences Publication Activity Database

    Červenka, Jiří; Ledinský, Martin; Stuchlíková, The-Ha; Stuchlík, Jiří; Výborný, Zdeněk; Holovský, Jakub; Hruška, Karel; Fejfar, Antonín; Kočka, Jan

    2010-01-01

    Roč. 4, 1-2 (2010), s. 37-39 ISSN 1862-6254 R&D Projects: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanowires * silicon * scanning electron microscopy * hemical vapor deposition * Raman spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.660, year: 2010 http://www3.interscience.wiley.com/ cgi -bin/fulltext/123213957/HTMLSTART

  12. Microwave undulator

    International Nuclear Information System (INIS)

    Batchelor, K.

    1986-03-01

    The theory of a microwave undulator utilizing a plane rectangular waveguide operating in the TE/sub 10n/ mode and other higher order modes is presented. Based on this, a possible undulator configuration is analyzed, leading to the conclusion that the microwave undulator represents a viable option for undulator wavelength down to about 1 cm where peak voltage and available microwave power considerations limit effectiveness. 4 refs., 4 figs

  13. Microwave Microscope

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Makes ultra-high-resolution field measurements. The Microwave Microscope (MWM) has been used in support of several NRL experimental programs involving sea...

  14. Low-temperature ({<=}200 Degree-Sign C) plasma enhanced atomic layer deposition of dense titanium nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Samal, Nigamananda; Du Hui; Luberoff, Russell; Chetry, Krishna; Bubber, Randhir; Hayes, Alan; Devasahayam, Adrian [Veeco Instruments, 1 Terminal Drive, Plainview, New York 11803 (United States)

    2013-01-15

    Titanium nitride (TiN) has been widely used in the semiconductor industry for its diffusion barrier and seed layer properties. However, it has seen limited adoption in other industries in which low temperature (<200 Degree-Sign C) deposition is a requirement. Examples of applications which require low temperature deposition are seed layers for magnetic materials in the data storage (DS) industry and seed and diffusion barrier layers for through-silicon-vias (TSV) in the MEMS industry. This paper describes a low temperature TiN process with appropriate electrical, chemical, and structural properties based on plasma enhanced atomic layer deposition method that is suitable for the DS and MEMS industries. It uses tetrakis-(dimethylamino)-titanium as an organometallic precursor and hydrogen (H{sub 2}) as co-reactant. This process was developed in a Veeco NEXUS Trade-Mark-Sign chemical vapor deposition tool. The tool uses a substrate rf-biased configuration with a grounded gas shower head. In this paper, the complimentary and self-limiting character of this process is demonstrated. The effects of key processing parameters including temperature, pulse time, and plasma power are investigated in terms of growth rate, stress, crystal morphology, chemical, electrical, and optical properties. Stoichiometric thin films with growth rates of 0.4-0.5 A/cycle were achieved. Low electrical resistivity (<300 {mu}{Omega} cm), high mass density (>4 g/cm{sup 3}), low stress (<250 MPa), and >85% step coverage for aspect ratio of 10:1 were realized. Wet chemical etch data show robust chemical stability of the film. The properties of the film have been optimized to satisfy industrial viability as a Ruthenium (Ru) preseed liner in potential data storage and TSV applications.

  15. Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide

    International Nuclear Information System (INIS)

    Lehnert, Wolfgang; Ruhl, Guenther; Gschwandtner, Alexander

    2012-01-01

    Among many promising high-k dielectrics, TiO 2 is an interesting candidate because of its relatively high k value of over 40 and its easy integration into existing semiconductor manufacturing schemes. The most critical issues of TiO 2 are its low electrical stability and its high leakage current density. However, doping TiO 2 with Al has shown to yield significant improvement of layer quality on Ru electrodes [S. K. Kim et al., Adv. Mater. 20, 1429 (2008)]. In this work we investigated if atomic layer deposition (ALD) of Al doped TiO 2 is feasible in a batch system. Electrical characterizations were done using common electrode materials like TiN, TaN, or W. Additionally, the effect of plasma enhanced processing in this reactor was studied. For this investigation a production batch ALD furnace has been retrofitted with a plasma source which can be used for post deposition anneals with oxygen radicals as well as for directly plasma enhanced ALD. After evaluation of several Ti precursors a deposition process for AlTiO x with excellent film thickness and composition uniformity was developed. The effects of post deposition anneals, Al 2 O 3 interlayers between electrode and TiO 2 , Al doping concentration, plasma enhanced deposition and electrode material type on leakage current density are shown. An optimized AlTiO x deposition process on TaN electrodes yields to leakage current density of 5 x 10 -7 A/cm 2 at 2 V and k values of about 35. Thus, it could be demonstrated that a plasma enhanced batch ALD process for Al doped TiO 2 is feasible with acceptable leakage current density on a standard electrode material.

  16. Medical preparation container comprising microwave powered sensor assembly

    DEFF Research Database (Denmark)

    2016-01-01

    The present invention relates to a medical preparation container which comprises a microwave powered sensor assembly. The microwave powered sensor assembly comprises a sensor configured to measure a physical property or chemical property of a medical preparation during its heating in a microwave ...... oven. The microwave powered sensor assembly is configured for harvesting energy from microwave radiation emitted by the microwave oven and energize the sensor by the harvested microwave energy.......The present invention relates to a medical preparation container which comprises a microwave powered sensor assembly. The microwave powered sensor assembly comprises a sensor configured to measure a physical property or chemical property of a medical preparation during its heating in a microwave...

  17. The Structure and Molecular Parameters of Camphene Determined by Fourier Transform Microwave Spectroscopy and Quantum Chemical Calculations

    Science.gov (United States)

    Neeman, Elias M.; Dréan, Pascal; Huet, T. R.

    2016-06-01

    The emission of volatile organic compounds, from plants has strong revelance for plant physiology, plant ecology and atmospheric chemistry. Camphene (C10H16) is a bicyclic monoterpene which is emitted in the atmosphere by biogenic sources. The structure of the unique stable conformer was optimized using density functional theory and ab initio calculations. The rotational spectrum of camphene was recorded in a supersonic jet expansion with a Fourier transform microwave spectrometer over the range 2-20 GHz. Signals from the parent species and from the ten 13C isotopomers were observed in natural abundance. The rotational and centrifugal distortion parameters were fitted to a Watson's Hamiltonian in the A-reduction. A magnetic hyperfine structure associated with the pairs of hydrogen nuclei in the methylene groups was observed and modeled.The rotational constants coupled to the equilibrium structure calculations were used to determine the r_0 and the r_m(1) gas-phase geometries of the carbon skeleton. The present work provides the first spectroscopic characterization of camphene in the gas phase and these results are also relevant for ozonolysis kinetics study through Criegee intermediates. R. Baraldi, F. Rapparini, O. Facini, D. Spano and P. Duce, Journal of Mediterranean Ecology, Vol.6, No.1, (2005). A. Bracho-Nunez, N. M. Knothe, S. Welter, M. Staudt, W. R. Costa, M. A. R. Liberato, M. T. F. Piedade, and J. Kesselmeier Biogeosciences, 10, 5855-5873, (2013). Minna Kivimäenpää, Narantsetseg Magsarjav, Rajendra Ghimire, Juha-Matti Markkanen, Juha Heijari, Martti Vuorinen and Jarmo K. Holopainen, Atmospheric Environment, 60, 477-485, (2012). R.C. de M. Oliveira and G. F. Bauerfeldt, J. Phys. Chem. A, 119 2802-2812 (2015)

  18. Application of Microwave Irradiation to Rapid Organic Inclusion Complex

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    @@ Microwave irradiation has been used in chemical laboratories for moisture analysis and wet asking procedures of biological and geological materials for a number of years [1]. More recently the microwave irradiation also widely used for rapid organic synthesis [2]. However, there have not yet been any reports concerning the ultilisatioin of microwave ovens in the routine organic inclusion complex regularly in chemical research.

  19. Ceramic matrix composites by microwave assisted CVI

    International Nuclear Information System (INIS)

    Currier, R.P.; Devlin, D.J.

    1993-01-01

    Chemical vapor infiltration (CVI) processes for producing continuously reinforced ceramic composites are reviewed. Potential advantages of microwave assisted CVI are noted and numerical studies of microwave assisted CVI are reviewed. The models predict inverted thermal gradients in fibrous ceramic preforms subjected to microwave radiation and suggest processing strategies for achieving uniformly dense composites. Comparisons are made to experimental results on silicon-based composite systems. The role played by the relative ability of fiber and matrix to dissipate microwave energy is noted. Results suggest that microwave induced inverted gradients can be exploited to promote inside-out densification. 10 refs., 2 figs

  20. Growth, microstructure, and field-emission properties of synthesized diamond film on adamantane-coated silicon substrate by microwave plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Tiwari, Rajanish N.; Chang Li

    2010-01-01

    Diamond nucleation on unscratched Si surface is great importance for its growth, and detailed understanding of this process is therefore desired for many applications. The pretreatment of the substrate surface may influence the initial growth period. In this study, diamond films have been synthesized on adamantane-coated crystalline silicon {100} substrate by microwave plasma chemical vapor deposition from a gaseous mixture of methane and hydrogen gases without the application of a bias voltage to the substrates. Prior to adamantane coating, the Si substrates were not pretreated such as abraded/scratched. The substrate temperature was ∼530 deg. C during diamond deposition. The deposited films are characterized by scanning electron microscopy, Raman spectrometry, x-ray diffraction, and x-ray photoelectron spectroscopy. These measurements provide definitive evidence for high-crystalline quality diamond film, which is synthesized on a SiC rather than clean Si substrate. Characterization through atomic force microscope allows establishing fine quality criteria of the film according to the grain size of nanodiamond along with SiC. The diamond films exhibit a low-threshold (55 V/μm) and high current-density (1.6 mA/cm 2 ) field-emission (FE) display. The possible mechanism of formation of diamond films and their FE properties have been demonstrated.

  1. The Influences of H2Plasma Pretreatment on the Growth of Vertically Aligned Carbon Nanotubes by Microwave Plasma Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Wen Hua-Chiang

    2008-01-01

    Full Text Available AbstractThe effects of H2flow rate during plasma pretreatment on synthesizing the multiwalled carbon nanotubes (MWCNTs by using the microwave plasma chemical vapor deposition are investigated in this study. A H2and CH4gas mixture with a 9:1 ratio was used as a precursor for the synthesis of MWCNT on Ni-coated TaN/Si(100 substrates. The structure and composition of Ni catalyst nanoparticles were investigated using scanning electron microscopy (SEM and transmission electron microscopy (TEM. The present findings showed that denser Ni catalyst nanoparticles and more vertically aligned MWCNTs could be effectively achieved at higher flow rates. From Raman results, we found that the intensity ratio of G and D bands (ID/IG decreases with an increasing flow rate. In addition, TEM results suggest that H2plasma pretreatment can effectively reduce the amorphous carbon and carbonaceous particles. As a result, the pretreatment plays a crucial role in modifying the obtained MWCNTs structures.

  2. Study of the Morphological, Structural, Optical and Photoelectrochemical Properties of Zinc Oxide Nanorods Grown Using a Microwave Chemical Bath Deposition Method

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Sungjin; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2017-04-15

    In this study, zinc oxide (ZnO) nanostructures were grown on a ZnO-buffered fluorine-doped tin oxide (FTO) substrate using a microwave chemical bath deposition method with different zinc oxide precursor concentrations from 0.01 to 0.5 M. We investigated the effects of the zinc oxide precursor concentration on the morphological, structural, optical and photoelectrochemical properties of the ZnO nanostructures. From this work, we found that ZnO one-dimensional structures mainly grew along the (002) plane, and the nanorod length, diameter, surface area and photoelectrochemical properties were largely dependent on the precursor concentration. That is, the photoelectrochemical properties were affected by the morphological and structural properties of the ZnO. The morphological, structural, optical and photoelectrochemical properties of the ZnO nanostructure were investigated by field emission scanning electron microscopy (FE-SEM) and atomic force microscope (AFM), X-ray diffraction (XRD), UV-visible spectroscopy and 3-electrode potentiostat. We obtained the highest photocurrent density of 0.37 mA/cm{sup 2} (at 1.1 V vs. SCE) from the precursor concentration of 0.07 M, which resulted in ZnO nanostructures with proper length and diameter, large surface area and good structural properties.

  3. Automated radioanalytical system incorporating microwave-assisted sample preparation, chemical separation, and online radiometric detection for the monitoring of total 99Tc in nuclear waste processing streams.

    Science.gov (United States)

    Egorov, Oleg B; O'Hara, Matthew J; Grate, Jay W

    2012-04-03

    An automated fluidic instrument is described that rapidly determines the total (99)Tc content of aged nuclear waste samples, where the matrix is chemically and radiologically complex and the existing speciation of the (99)Tc is variable. The monitor links microwave-assisted sample preparation with an automated anion exchange column separation and detection using a flow-through solid scintillator detector. The sample preparation steps acidify the sample, decompose organics, and convert all Tc species to the pertechnetate anion. The column-based anion exchange procedure separates the pertechnetate from the complex sample matrix, so that radiometric detection can provide accurate measurement of (99)Tc. We developed a preprogrammed spike addition procedure to automatically determine matrix-matched calibration. The overall measurement efficiency that is determined simultaneously provides a self-diagnostic parameter for the radiochemical separation and overall instrument function. Continuous, automated operation was demonstrated over the course of 54 h, which resulted in the analysis of 215 samples plus 54 hly spike-addition samples, with consistent overall measurement efficiency for the operation of the monitor. A sample can be processed and measured automatically in just 12.5 min with a detection limit of 23.5 Bq/mL of (99)Tc in low activity waste (0.495 mL sample volume), with better than 10% RSD precision at concentrations above the quantification limit. This rapid automated analysis method was developed to support nuclear waste processing operations planned for the Hanford nuclear site.

  4. Modified DLC coatings prepared in a large-scale reactor by dual microwave/pulsed-DC plasma-activated chemical vapour deposition

    International Nuclear Information System (INIS)

    Corbella, C.; Bialuch, I.; Kleinschmidt, M.; Bewilogua, K.

    2008-01-01

    Diamond-Like Carbon (DLC) films find abundant applications as hard and protective coatings due to their excellent mechanical and tribological performances. The addition of new elements to the amorphous DLC matrix tunes the properties of this material, leading to an extension of its scope of applications. In order to scale up their production to a large plasma reactor, DLC films modified by silicon and oxygen additions have been grown in an industrial plant of 1m 3 by means of pulsed-DC plasma-activated chemical vapour deposition (PACVD). The use of an additional microwave (MW) source has intensified the glow discharge, partly by electron cyclotron resonance (ECR), accelerating therefore the deposition process. Hence, acetylene, tetramethylsilane (TMS) and hexamethyldisiloxane (HMDSO) constituted the respective gas precursors for the deposition of a-C:H (DLC), a-C:H:Si and a-C:H:Si:O films by dual MW/pulsed-DC PACVD. This work presents systematic studies of the deposition rate, hardness, adhesion, abrasive wear and water contact angle aimed to optimize the technological parameters of deposition: gas pressure, relative gas flow of the monomers and input power. This study has been completed with measures of the atomic composition of the samples. Deposition rates around 1 μm/h, typical for standard processes held in the large reactor, were increased about by a factor 10 when the ionization source has been operated in ECR mode

  5. Effects of Surface Modification of Nanodiamond Particles for Nucleation Enhancement during Its Film Growth by Microwave Plasma Jet Chemical Vapour Deposition Technique

    Directory of Open Access Journals (Sweden)

    Chii-Ruey Lin

    2014-01-01

    Full Text Available The seedings of the substrate with a suspension of nanodiamond particles (NDPs were widely used as nucleation seeds to enhance the growth of nanostructured diamond films. The formation of agglomerates in the suspension of NDPs, however, may have adverse impact on the initial growth period. Therefore, this paper was aimed at the surface modification of the NDPs to enhance the diamond nucleation for the growth of nanocrystalline diamond films which could be used in photovoltaic applications. Hydrogen plasma, thermal, and surfactant treatment techniques were employed to improve the dispersion characteristics of detonation nanodiamond particles in aqueous media. The seeding of silicon substrate was then carried out with an optimized spin-coating method. The results of both Fourier transform infrared spectroscopy and dynamic light scattering measurements demonstrated that plasma treated diamond nanoparticles possessed polar surface functional groups and attained high dispersion in methanol. The nanocrystalline diamond films deposited by microwave plasma jet chemical vapour deposition exhibited extremely fine grain and high smooth surfaces (~6.4 nm rms on the whole film. These results indeed open up a prospect of nanocrystalline diamond films in solar cell applications.

  6. TiO{sub 2} films obtained by microwave-activated chemical-bath deposition used to improve TiO{sub 2}-conducting glass contact

    Energy Technology Data Exchange (ETDEWEB)

    Zumeta, I.; Gonzalez, B. [Institute for Material Science and Technology, University of Havana, Colina Universitaria, Ciudad Habana 10 400 (Cuba); Ayllon, J.A.; Domenech, X. [Chemistry Department, Autonomous University of Barcelona, 08290 Cerdanyola del Valles (Spain); Vigil, E. [Institute for Material Science and Technology, University of Havana, Colina Universitaria, Ciudad Habana 10 400 (Cuba); Physics Faculty, University of Havana, Colina Universitaria, Ciudad Habana 10 400 (Cuba)

    2009-10-15

    In traditional solar cells, metal-semiconductor contacts used to extract photogenerated carriers are very important. In dye-sensitized solar cells (DSSC) not much attention has been given to contact between the TiO{sub 2} and the transparent conducting glass (TCO), which is used instead of a metal contact to extract electrons. TiO{sub 2} layers obtained by microwave-activated chemical-bath deposition (MW-CBD) are proposed to improve TiO{sub 2} contact to conducting glass. Spectra of incident photon to current conversion efficiency (IPCE) are obtained for two-photoelectrode TiO{sub 2} photoelectrochemical cells. IPCE spectra show higher values when TiO{sub 2} double layer photoelectrodes are used. In these, the first layer or contacting layer is made by MW-CBD. Best results are obtained for double layer photoelectrodes on FTO (SnO{sub 2}:F) as conducting oxide substrate. Modeling of IPCE spectra reveals the importance of electrical contact and electron extraction rate at the TiO{sub 2}/TCO interface. (author)

  7. Pressure dependence of morphology and phase composition of SiC films deposited by microwave plasma chemical vapor deposition on cemented carbide substrates

    Energy Technology Data Exchange (ETDEWEB)

    Yu Shengwang, E-mail: bkdysw@yahoo.cn; Fan Pengwei; Tang Weizhong; Li Xiaojing; Hu Haolin; Hei Hongjun; Zhang Sikai; Lu Fanxiu

    2011-11-01

    SiC films were deposited on cemented carbide substrates by employing microwave plasma chemical vapor deposition method using tetramethylsilane (Si(CH{sub 3}){sub 4}) diluted in H{sub 2} as the precursor. Scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction and scratching technique were used to characterize morphology, composition, phases present and adhesion of the films. Experimental results show that the deposition pressure has great influence on morphologies and phase composition of the films. In sequence, SiC films with a cauliflower-like microstructure, granular films with terrace-featured SiC particles coexisting with Co{sub 2}Si compound and clusters of nanometer SiC nanoplatelets appear as a function of the deposition pressure. In terms of plasma density and substrate temperature, this sequential appearance of microstructures of SiC films was explained. Adhesion tests showed that among the three types of films studied, the films with the terrace-featured SiC particles have relatively higher adhesion. Such knowledge will be of importance when the SiC films are used as interlayer between diamond films and cemented carbide substrates.

  8. Pressure dependence of morphology and phase composition of SiC films deposited by microwave plasma chemical vapor deposition on cemented carbide substrates

    International Nuclear Information System (INIS)

    Yu Shengwang; Fan Pengwei; Tang Weizhong; Li Xiaojing; Hu Haolin; Hei Hongjun; Zhang Sikai; Lu Fanxiu

    2011-01-01

    SiC films were deposited on cemented carbide substrates by employing microwave plasma chemical vapor deposition method using tetramethylsilane (Si(CH 3 ) 4 ) diluted in H 2 as the precursor. Scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction and scratching technique were used to characterize morphology, composition, phases present and adhesion of the films. Experimental results show that the deposition pressure has great influence on morphologies and phase composition of the films. In sequence, SiC films with a cauliflower-like microstructure, granular films with terrace-featured SiC particles coexisting with Co 2 Si compound and clusters of nanometer SiC nanoplatelets appear as a function of the deposition pressure. In terms of plasma density and substrate temperature, this sequential appearance of microstructures of SiC films was explained. Adhesion tests showed that among the three types of films studied, the films with the terrace-featured SiC particles have relatively higher adhesion. Such knowledge will be of importance when the SiC films are used as interlayer between diamond films and cemented carbide substrates.

  9. Microwave Measurements

    CERN Document Server

    Skinner, A D

    2007-01-01

    The IET has organised training courses on microwave measurements since 1983, at which experts have lectured on modern developments. Their lecture notes were first published in book form in 1985 and then again in 1989, and they have proved popular for many years with a readership beyond those who attended the courses. The purpose of this third edition of the lecture notes is to bring the latest techniques in microwave measurements to this wider audience. The book begins with a survey of the theory of current microwave circuits and continues with a description of the techniques for the measureme

  10. Microwave photonics

    CERN Document Server

    Lee, Chi H

    2006-01-01

    Wireless, optical, and electronic networks continue to converge, prompting heavy research into the interface between microwave electronics, ultrafast optics, and photonic technologies. New developments arrive nearly as fast as the photons under investigation, and their commercial impact depends on the ability to stay abreast of new findings, techniques, and technologies. Presenting a broad yet in-depth survey, Microwave Photonics examines the major advances that are affecting new applications in this rapidly expanding field.This book reviews important achievements made in microwave photonics o

  11. Interface charge trapping induced flatband voltage shift during plasma-enhanced atomic layer deposition in through silicon via

    Science.gov (United States)

    Li, Yunlong; Suhard, Samuel; Van Huylenbroeck, Stefaan; Meersschaut, Johan; Van Besien, Els; Stucchi, Michele; Croes, Kristof; Beyer, Gerald; Beyne, Eric

    2017-12-01

    A Through Silicon Via (TSV) is a key component for 3D integrated circuit stacking technology, and the diameter of a TSV keeps scaling down to reduce the footprint in silicon. The TSV aspect ratio, defined as the TSV depth/diameter, tends to increase consequently. Starting from the aspect ratio of 10, to improve the TSV sidewall coverage and reduce the process thermal budget, the TSV dielectric liner deposition process has evolved from sub-atmospheric chemical vapour deposition to plasma-enhanced atomic layer deposition (PE-ALD). However, with this change, a strong negative shift in the flatband voltage is observed in the capacitance-voltage characteristic of the vertical metal-oxide-semiconductor (MOS) parasitic capacitor formed between the TSV copper metal and the p-Si substrate. And, no shift is present in planar MOS capacitors manufactured with the same PE-ALD oxide. By comparing the integration process of these two MOS capacitor structures, and by using Elastic Recoil Detection to study the elemental composition of our films, it is found that the origin of the negative flatband voltage shift is the positive charge trapping at the Si/SiO2 interface, due to the positive PE-ALD reactants confined to the narrow cavity of high aspect ratio TSVs. This interface charge trapping effect can be effectively mitigated by high temperature annealing. However, this is limited in the real process due to the high thermal budget. Further investigation on liner oxide process optimization is needed.

  12. Carbon diffusion in uncoated and titanium nitride coated iron substrates during microwave plasma assisted chemical vapor deposition of diamond

    International Nuclear Information System (INIS)

    Weiser, P.S.; Prawer, S.; Manory, R.R.; Paterson, P.J.K.; Stuart, Sue-Anne

    1992-01-01

    Auger Electron Spectroscopy has been employed to investigate the effectiveness of thin films of TiN as barriers to carbon diffusion during Chemical Vapor Deposition (CVD) of diamond onto Fe substrates. Auger Depth Profiling was used to monitor the C concentration in the TiN layer, through the interface and into the substrate both before and after CVD diamond deposition. The results show that a layer of TiN only 250 Angstroems thick is sufficient to inhibit soot formation on the Fe surface and C diffusion into the Fe bulk. 14 refs., 4 figs

  13. Microwave discharge electrodeless lamps (MDELs). Part IX. A novel MDEL photoreactor for the photolytic and chemical oxidation treatment of contaminated wastewaters.

    Science.gov (United States)

    Horikoshi, Satoshi; Tsuchida, Akihiro; Shinomiya, Tomohiro; Serpone, Nick

    2015-12-01

    This article reports on the fabrication and enhanced performance of a novel microwave discharge electrodeless lamp (MDEL) consisting of a three layered cylindrical structure that was effective in the remediation of wastewater containing the 2,4-D herbicide and the near total sterilization of bacteria-contaminated pond water (E. coli and other microorganisms) through photolysis with the emitted vacuum-UV (185 nm) and UVC (254 nm) light from the MDEL and through chemical oxidation with reactive oxygen species (ROS) produced by the photolysis of dioxygen and air oxygen through one of the photoreactors. The flow rates of the 1.0 L contaminated waters were 0.6 and 1.2 L min(-1). The integrated UV/ROSO2 and UV/ROSair methods used to carry out the degradation of 2,4-D and sterilization processes were more effective than either the UV method alone or the ROSO2 and ROSair methods for short time periods (5 or 8 min). At a lower flow rate, 79% of 2,4-D was degraded by the UV/ROSO2 method and 55% by UV/ROSair after 8 min. At a faster flow rate of 1.2 L min(-1), degradation of 2,4-D in 1.0 L volume of water was 84% and 77% complete by the UV/ROSO2 and the UV/ROSair method, respectively, after 8 min of irradiation. The number of kills of E. coli bacteria was nearly quantitative (98 and 99%) by the UV/ROSO2 and UV/ROSair methods after treating the contaminated water for 5 min. The decrease of total viable microorganisms in pond water was 90% and 80% after 5 min of microwave irradiation at a flow rate of 1.2 L min(-1) by the integrated methods UV/ROSO2 and UV/ROSair, respectively. The rate of flow of oxygen gas through the photoreactor impacted the extent of degradation and the related dynamics of the 2,4-D herbicide.

  14. Role of plasma enhanced atomic layer deposition reactor wall conditions on radical and ion substrate fluxes

    Energy Technology Data Exchange (ETDEWEB)

    Sowa, Mark J., E-mail: msowa@ultratech.com [Ultratech/Cambridge NanoTech, 130 Turner Street, Building 2, Waltham, Massachusetts 02453 (United States)

    2014-01-15

    Chamber wall conditions, such as wall temperature and film deposits, have long been known to influence plasma source performance on thin film processing equipment. Plasma physical characteristics depend on conductive/insulating properties of chamber walls. Radical fluxes depend on plasma characteristics as well as wall recombination rates, which can be wall material and temperature dependent. Variations in substrate delivery of plasma generated species (radicals, ions, etc.) impact the resulting etch or deposition process resulting in process drift. Plasma enhanced atomic layer deposition is known to depend strongly on substrate radical flux, but film properties can be influenced by other plasma generated phenomena, such as ion bombardment. In this paper, the chamber wall conditions on a plasma enhanced atomic layer deposition process are investigated. The downstream oxygen radical and ion fluxes from an inductively coupled plasma source are indirectly monitored in temperature controlled (25–190 °C) stainless steel and quartz reactors over a range of oxygen flow rates. Etch rates of a photoresist coated quartz crystal microbalance are used to study the oxygen radical flux dependence on reactor characteristics. Plasma density estimates from Langmuir probe ion saturation current measurements are used to study the ion flux dependence on reactor characteristics. Reactor temperature was not found to impact radical and ion fluxes substantially. Radical and ion fluxes were higher for quartz walls compared to stainless steel walls over all oxygen flow rates considered. The radical flux to ion flux ratio is likely to be a critical parameter for the deposition of consistent film properties. Reactor wall material, gas flow rate/pressure, and distance from the plasma source all impact the radical to ion flux ratio. These results indicate maintaining chamber wall conditions will be important for delivering consistent results from plasma enhanced atomic layer deposition

  15. Control of ordered mesoporous titanium dioxide nanostructures formed using plasma enhanced glancing angle deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gibson, Des [Institute of Thin Films, Sensors & Imaging, Scottish Universities Physics Alliance, University of West of Scotland, Paisley, PA1 2BE (United Kingdom); Child, David, E-mail: david.child@uws.ac.uk [Institute of Thin Films, Sensors & Imaging, Scottish Universities Physics Alliance, University of West of Scotland, Paisley, PA1 2BE (United Kingdom); Song, Shigeng; Zhao, Chao [Institute of Thin Films, Sensors & Imaging, Scottish Universities Physics Alliance, University of West of Scotland, Paisley, PA1 2BE (United Kingdom); Alajiani, Yahya [Institute of Thin Films, Sensors & Imaging, Scottish Universities Physics Alliance, University of West of Scotland, Paisley, PA1 2BE (United Kingdom); Department of Physics, Faculty of Science, Jazan University, Jazan (Saudi Arabia); Waddell, Ewan [Thin Film Solutions Ltd, West of Scotland Science Park, Glasgow, G20 0TH (United Kingdom)

    2015-10-01

    Three dimensional nanostructures of mesoporous (pore diameter between 2-50 nm) nanocrystalline titania (TiO{sub 2}) were produced using glancing angle deposition combined with plasma ion assisted deposition, providing plasma enhanced glancing angle deposition eliminating the need for post-annealing to achieve film crystallinity. Electron beam evaporation was chosen to deposit nanostructures at various azimuthal angles, achieving designed variation in three dimensional nanostructure. A thermionic broad beam hollow cathode plasma source was used to enhance electron beam deposition, with ability to vary in real time ion fluxes and energies providing a means to modify and control TiO{sub 2} nanostructure real time with controlled density and porosity along and lateral to film growth direction. Plasma ion assisted deposition was carried out at room temperature using a hollow cathode plasma source, ensuring low heat loading to the substrate during deposition. Plasma enhanced glancing angle TiO{sub 2} structures were deposited onto borosilicate microscope slides and used to characterise the effects of glancing angle and plasma ion energy distribution function on the optical and nanostructural properties. Variation in TiO{sub 2} refractive index from 1.40 to 2.45 (@ 550 nm) using PEGLAD is demonstrated. Results and analysis of the influence of plasma enhanced glancing angle deposition on evaporant path and resultant glancing angle deviation from standard GLAD are described. Control of mesoporous morphology is described, providing a means of optimising light trapping features and film porosity, relevant to applications such as fabrication of dye sensitised solar cells. - Highlights: • Plasma assistance during glancing angle deposition enables control of morphology. • Ion energy variation during glancing angle deposition varies columnar angle • Column thickness of glancing angle deposition dependant on ion current density • Ion current density variation during

  16. Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition

    KAUST Repository

    Zhao, Chao

    2013-09-01

    The growth of TiO2 films by plasma enhanced atomic layer deposition using Star-Ti as a precursor has been systematically studied. The conversion from amorphous to crystalline TiO2 was observed either during high temperature growth or annealing process of the films. The refractive index and bandgap of TiO2 films changed with the growth and annealing temperatures. The optimization of the annealing conditions for TiO2 films was also done by morphology and density studies. © 2013 Elsevier B.V. All rights reserved.

  17. Mechanism of Microwave-Assisted Pyrolysis of Glucose to Furfural Revealed by Isotopic Tracer and Quantum Chemical Calculations.

    Science.gov (United States)

    Bao, Liwei; Shi, Lei; Luo, Hu; Kong, Lingzhao; Li, Shenggang; Wei, Wei; Sun, Yuhan

    2017-08-10

    Glucose labeled with 13 C or 18 O was used to investigate the mechanism of its conversion into furfural by microwaveassisted pyrolysis. The isotopic content and location in furfural were determined from GC-MS and 13 C NMR spectroscopic measurements and data analysis. The results suggest that the carbon skeleton in furfural is mainly derived from C1 to C5 of glucose, whereas the C of the aldehyde group and the O of the furan ring in furfural primarily originate from C1 and O5 of glucose, respectively. For the first time, the source of O in the furan ring of furfural was elucidated directly by experiment, providing results that are consistent with predictions from recent quantum chemical calculations. Moreover, further theoretical calculations indicate substantially lower energy barriers than previous predictions by considering the potential catalytic effect of formic acid, which is one of the pyrolysis products. The catalytic role of formic acid is further confirmed by experimental evidence. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Field electron emission characteristics of chemical vapour deposition diamond films with controlled sp2 phase concentration

    International Nuclear Information System (INIS)

    Lu, X.; Yang, Q.; Xiao, C.; Hirose, A.

    2008-01-01

    Diamond films were synthesized in a microwave plasma-enhanced chemical vapour deposition reactor. The microstructure and surface morphology of deposited films were characterized by Raman spectroscope and scanning electron microscope. The sp 2 phase concentration in diamond films was varied and its effect on the field electron emission (FEE) properties was investigated. Diamond films deposited under higher methane concentration exhibit better FEE property including lower turn-on electric field and larger emission current. The predominating factor modifying the FEE property is presumed to be the increase of sp 2 phase concentration. The influence of bias voltage on the FEE property of diamond films is not monotonic. Postgrowth acid treatment reduces the sp 2 phase content in diamond films without changing diamond grain sizes. The corresponding FEE property was degraded

  19. The Relationship Between Chemical Structure and Dielectric Properties of Plasma-Enhanced Chemical Vapor Deposited Polymer Thin Films (Postprint)

    Science.gov (United States)

    2007-01-01

    C6H6, Aldrich Co., liquid , high performance liquid chromatography (HPLC) grade with a purity of 99.9%) and octafluorocyclobutane (C4F8, OFCB...attributed to the lack of molecular mobility (confined by the crosslinking) and low ionic polarization of the molecular structures [6]. The frequency...in dielectric constant at low frequencies can be traced to orientational polarizations of trapped free radicals, unpaired electron sites, oligomeric

  20. A study of the performance and properties of diamond like carbon (DLC) coatings deposited by plasma chemical vapor deposition (CVD) for two stroke engine components

    Energy Technology Data Exchange (ETDEWEB)

    Tither, D. [BEP Grinding Ltd., Manchester (United Kingdom); Ahmed, W.; Sarwar, M.; Penlington, R. [Univ. of Northumbria, Newcastle-upon-Tyne (United Kingdom)

    1995-12-31

    Chemical vapor deposition (CVD) using microwave and RF plasma is arguably the most successful technique for depositing diamond and diamond like carbon (DLC) films for various engineering applications. However, the difficulties of depositing diamond are nearly as extreme as it`s unique combination of physical, chemical and electrical properties. In this paper, the modified low temperature plasma enhanced CVD system is described. The main focus of this paper will be work related to deposition of DLC on metal matrix composite materials (MMCs) for application in two-stroke engine components and results will be presented from SEM, mechanical testing and composition analysis studies. The authors have demonstrated the feasibility of depositing DLC on MMCs for the first time using a vacuum deposition process.

  1. Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition.

    Science.gov (United States)

    Jia, Endong; Zhou, Chunlan; Wang, Wenjing

    2015-01-01

    Plasma-enhanced atom layer deposition (PEALD) can deposit denser films than those prepared by thermal ALD. But the improvement on thickness uniformity and the decrease of defect density of the films deposited by PEALD need further research. A PEALD process from trimethyl-aluminum (TMA) and oxygen plasma was investigated to study the influence of the conditions with different plasma powers and deposition temperatures on uniformity and growth rate. The thickness and refractive index of films were measured by ellipsometry, and the passivation effect of alumina on n-type silicon before and after annealing was measured by microwave photoconductivity decay method. Also, the effects of deposition temperature and annealing temperature on effective minority carrier lifetime were investigated. Capacitance-voltage and conductance-voltage measurements were used to investigate the interface defect density of state (D it) of Al2O3/Si. Finally, Al diffusion P(+) emitter on n-type silicon was passivated by PEALD Al2O3 films. The conclusion is that the condition of lower substrate temperature accelerates the growth of films and that the condition of lower plasma power controls the films' uniformity. The annealing temperature is higher for samples prepared at lower substrate temperature in order to get the better surface passivation effects. Heavier doping concentration of Al increased passivation quality after annealing by the effective minority carrier lifetime up to 100 μs.

  2. Microwave dielectric properties of nanostructured nickel ferrite

    Indian Academy of Sciences (India)

    Wintec

    Abstract. Nickel ferrite is one of the important ferrites used in microwave devices. In the present work, we have synthesized nanoparticles of nickel ferrite using chemical precipitation technique. The crystal structure and grain size of the particles are studied using XRD. The microwave dielectric properties of nanostructured.

  3. Chemical composition and resistance to oxidation of high-oleic rapeseed oil pressed from microwave pre-treated intact and de-hulled seeds

    International Nuclear Information System (INIS)

    Rękas, A.; Wroniak, M.; Siger, A.; Ścibisz, I.

    2017-01-01

    The influence of a microwave (MV) pre-treatment (3, 6, 9 min, 800W) on the physicochemical properties of high-oleic rapeseed oil prepared from intact (HORO) and de-hulled seeds (DHORO) was investigated in this study. A control DHORO contained higher levels of total tocopherols and carotenoids, while higher concentrations of total phenolic compounds and chlorophylls were detected in the HORO. The MV pre-treatment caused a decrease in the unsaturated fatty acids content that was more evident for the DHOROs. The microwaving time significantly affected phytochemical contents and the color of both types of oils. A vast increase in canolol concentration was noticeable following 9 min of microwaving, which increased 506- and 155-fold in the HORO and DHORO, respectively. At the same time, the antioxidant capacity of oil produced from MV pre-treated seeds for 9 min was nearly 4 times higher than that of the control oil for both types of oils. [es

  4. Advances in microwaves 8

    CERN Document Server

    Young, Leo

    2013-01-01

    Advances in Microwaves, Volume 8 covers the developments in the study of microwaves. The book discusses the circuit forms for microwave integrated circuits; the analysis of microstrip transmission lines; and the use of lumped elements in microwave integrated circuits. The text also describes the microwave properties of ferrimagnetic materials, as well as their interaction with electromagnetic waves propagating in bounded waveguiding structures. The integration techniques useful at high frequencies; material technology for microwave integrated circuits; specific requirements on technology for d

  5. Microwave power engineering applications

    CERN Document Server

    Okress, Ernest C

    2013-01-01

    Microwave Power Engineering, Volume 2: Applications introduces the electronics technology of microwave power and its applications. This technology emphasizes microwave electronics for direct power utilization and transmission purposes. This volume presents the accomplishments with respect to components, systems, and applications and their prevailing limitations in the light of knowledge of the microwave power technology. The applications discussed include the microwave heating and other processes of materials, which utilize the magnetron predominantly. Other applications include microwave ioni

  6. Characterization of remote O2-plasma-enhanced CVD SiO2/GaN(0001) structure using photoemission measurements

    Science.gov (United States)

    Truyen, Nguyen Xuan; Ohta, Akio; Makihara, Katsunori; Ikeda, Mitsuhisa; Miyazaki, Seiichi

    2018-01-01

    The control of chemical composition and bonding features at a SiO2/GaN interface is a key to realizing high-performance GaN power devices. In this study, an ∼5.2-nm-thick SiO2 film has been deposited on an epitaxial GaN(0001) surface by remote O2-plasma-enhanced chemical vapor deposition (O2-RPCVD) using SiH4 and Ar/O2 mixture gases at a substrate temperature of 500 °C. The depth profile of chemical structures and electronic defects of the O2-RPCVD SiO2/GaN structures has been evaluated from a combination of SiO2 thinning examined by X-ray photoelectron spectroscopy (XPS) and the total photoelectron yield spectroscopy (PYS) measurements. As a highlight, we found that O2-RPCVD is effective for fabricating an abrupt SiO2/GaN interface.

  7. Microwave spectrum, structure, and quantum chemical studies of a compound of potential astrochemical and astrobiological interest: Z-3-amino-2-propenenitrile.

    Science.gov (United States)

    Askeland, Eva; Møllendal, Harald; Uggerud, Einar; Guillemin, Jean-Claude; Aviles Moreno, Juan-Ramon; Demaison, Jean; Huet, Thérèse R

    2006-11-23

    Z-3-Amino-2-propenenitrile, H2NCH=CHCN, a compound of astrochemical and astrobiological interest, has been studied by Stark and Fourier transform microwave spectroscopy along with eight of its isotopologues; the synthesis of five of these are reported. The spectra of the ground vibrational state and of three vibrationally excited states belonging to the two lowest normal modes were assigned for the parent species, whereas the ground states were assigned for the isotopologues. The frequency of the lowest in-plane bending fundamental vibration was determined to be 152(20) cm(-1) and the frequency of the lowest out-of-plane fundamental mode was found to be 176(20) cm(-1) by relative intensity measurements. A delicate problem is whether this compound is planar or slightly nonplanar. It was found that the rotational constants of the nine species cannot be used to conclude definitely whether the molecule is planar or not. The experimental dipole moment is mu(a) = 16.45(12), mu(b) = 2.86(6), mu(c) = 0 (assumed), and mu(tot.) = 16.70(12) x 10(-30) C m [5.01(4) D]. The quadrupole coupling constants of the two nitrogen nuclei are chi(aa) = -1.4917(21) and chi(cc) = 1.5644(24) MHz for the nitrogen atom of the cyano group and chi(aa) = 1.7262(18) and chi(cc) = -4.0591(17) MHz for the nitrogen atom of the amino group. Extensive quantum-chemical calculations have been performed, and the results obtained from these calculations have been compared with the experimental values. The equilibrium structures of vinylamine, vinyl cyanide, and Z-3-amino-2-propenenitrile have been calculated. These calculations have established that the equilibrium structure of the title compound is definitely nonplanar. However, the MP2/VQZ energy difference between the planar and nonplanar forms is small, only -423 J/mol. Z-Amino-2-propenenitrile and E-3-amino-2-propenenitrile are formed simply by mixing ammonia and cyanoacetylene at room temperature. A plausible reaction path has been modeled. G3

  8. Development of TiO2 containing hardmasks through plasma-enhanced atomic layer deposition

    Science.gov (United States)

    De Silva, Anuja; Seshadri, Indira; Chung, Kisup; Arceo, Abraham; Meli, Luciana; Mendoza, Brock; Sulehria, Yasir; Yao, Yiping; Sunder, Madhana; Truong, Hoa; Matham, Shravan; Bao, Ruqiang; Wu, Heng; Felix, Nelson M.; Kanakasabapathy, Sivananda

    2017-04-01

    With the increasing prevalence of complex device integration schemes, trilayer patterning with a solvent strippable hardmask can have a variety of applications. Spin-on metal hardmasks have been the key enabler for selective removal through wet strip when active areas need to be protected from dry etch damage. As spin-on metal hardmasks require a dedicated track to prevent metal contamination and are limited in their ability to scale down thickness without compromising on defectivity, there has been a need for a deposited hardmask solution. Modulation of film composition through deposition conditions enables a method to create TiO2 films with wet etch tunability. This paper presents a systematic study on development and characterization of plasma-enhanced atomic layer deposited (PEALD) TiO2-based hardmasks for patterning applications. We demonstrate lithographic process window, pattern profile, and defectivity evaluation for a trilayer scheme patterned with PEALD-based TiO2 hardmask and its performance under dry and wet strip conditions. Comparable structural and electrical performance is shown for a deposited versus a spin-on metal hardmask.

  9. Nuclear-microwave-electric propulsion

    International Nuclear Information System (INIS)

    Nordley, G.D.; Brown, W.C.

    1986-01-01

    Electric propulsion can move more mass through space than chemical propulsion by virtue of the higher exhaust velocities achieved by electric propulsion devices. This performance is achieved at the expense of very heavy power sources or very long trip times, which in turn create technical and economic penalties of varying severity. These penalties include: higher operations costs, delayed availability of the payload, and increased exposure to Van Allen Belt radiation. It is proposed to reduce these penalties by physically separating the power source from the propulsion and use microwave energy beaming technology, recently explored and partially developed/tested for Solar Power Satellite concept studies, as an extension cord. This paper summarizes the state of the art of the technology needed for space based beam microwave power cost/performance trades involved with the use beamed microwave/electric propulsion for some typical orbit transfer missions and offers some suggestions for additional work

  10. Compact Microwave Fourier Spectrum Analyzer

    Science.gov (United States)

    Savchenkov, Anatoliy; Matsko, Andrey; Strekalov, Dmitry

    2009-01-01

    A compact photonic microwave Fourier spectrum analyzer [a Fourier-transform microwave spectrometer, (FTMWS)] with no moving parts has been proposed for use in remote sensing of weak, natural microwave emissions from the surfaces and atmospheres of planets to enable remote analysis and determination of chemical composition and abundances of critical molecular constituents in space. The instrument is based on a Bessel beam (light modes with non-zero angular momenta) fiber-optic elements. It features low power consumption, low mass, and high resolution, without a need for any cryogenics, beyond what is achievable by the current state-of-the-art in space instruments. The instrument can also be used in a wide-band scatterometer mode in active radar systems.

  11. CHEMICALS

    CERN Multimedia

    Medical Service

    2002-01-01

    It is reminded that all persons who use chemicals must inform CERN's Chemistry Service (TIS-GS-GC) and the CERN Medical Service (TIS-ME). Information concerning their toxicity or other hazards as well as the necessary individual and collective protection measures will be provided by these two services. Users must be in possession of a material safety data sheet (MSDS) for each chemical used. These can be obtained by one of several means : the manufacturer of the chemical (legally obliged to supply an MSDS for each chemical delivered) ; CERN's Chemistry Service of the General Safety Group of TIS ; for chemicals and gases available in the CERN Stores the MSDS has been made available via EDH either in pdf format or else via a link to the supplier's web site. Training courses in chemical safety are available for registration via HR-TD. CERN Medical Service : TIS-ME :73186 or service.medical@cern.ch Chemistry Service : TIS-GS-GC : 78546

  12. Plasma-enhanced atomic-layer-deposited MoO{sub x} emitters for silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ziegler, Johannes; Schneider, Thomas; Sprafke, Alexander N. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Mews, Mathias; Korte, Lars [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Institute for Silicon-Photovoltaics, Berlin (Germany); Kaufmann, Kai [Fraunhofer Center for Silicon Photovoltaics CSP, Halle (Germany); University of Applied Sciences, Hochschule Anhalt Koethen, Koethen (Germany); Wehrspohn, Ralf B. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Fraunhofer Institute for Mechanics of Materials IWM Halle, Halle (Germany)

    2015-09-15

    A method for the deposition of molybdenum oxide (MoO{sub x}) with high growth rates at temperatures below 200 C based on plasma-enhanced atomic layer deposition is presented. The stoichiometry of the over-stoichiometric MoO{sub x} films can be adjusted by the plasma parameters. First results of these layers acting as hole-selective contacts in silicon heterojunction solar cells are presented and discussed. (orig.)

  13. Practical microwave electron devices

    CERN Document Server

    Meurant, Gerard

    2013-01-01

    Practical Microwave Electron Devices provides an understanding of microwave electron devices and their applications. All areas of microwave electron devices are covered. These include microwave solid-state devices, including popular microwave transistors and both passive and active diodes; quantum electron devices; thermionic devices (including relativistic thermionic devices); and ferrimagnetic electron devices. The design of each of these devices is discussed as well as their applications, including oscillation, amplification, switching, modulation, demodulation, and parametric interactions.

  14. Microwave PECVD of nanocrystalline diamond with rf induced bias nucleation

    Czech Academy of Sciences Publication Activity Database

    Frgala, Z.; Jašek, O.; Karásková, M.; Zajíčková, L.; Buršíková, V.; Franta, D.; Matějková, Jiřina; Rek, Antonín; Klapetek, P.; Buršík, Jiří

    2006-01-01

    Roč. 56, Suppl. B (2006), s. 1218-1223 ISSN 0011-4626 R&D Projects: GA ČR(CZ) GA202/05/0607 Institutional research plan: CEZ:AV0Z20650511; CEZ:AV0Z20410507 Keywords : nanocrystalline diamond * plasma enhanced chemical vapor deposition * self-bias Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 0.568, year: 2006

  15. Microwave combustion and sintering without isostatic pressure

    International Nuclear Information System (INIS)

    Ebadian, M.A.

    1998-01-01

    In recent years interest has grown rapidly in the application of microwave energy to the processing of ceramics, composites, polymers, and other materials. Advances in the understanding of microwave/materials interactions will facilitate the production of new ceramic materials with superior mechanical properties. One application of particular interest is the use of microwave energy for the mobilization of uranium for subsequent redeposition. Phase III (FY98) will focus on the microwave assisted chemical vapor infiltration tests for mobilization and redeposition of radioactive species in the mixed sludge waste. Uranium hexachloride and uranium (IV) borohydride are volatile compounds for which the chemical vapor infiltration procedure might be developed for the separation of uranium. Microwave heating characterized by an inverse temperature profile within a preformed ceramic matrix will be utilized for CVI using a carrier gas. Matrix deposition is expected to commence from the inside of the sample where the highest temperature is present. The preform matrix materials, which include aluminosilicate based ceramics and silicon carbide based ceramics, are all amenable to extreme volume reduction, densification, and vitrification. Important parameters of microwave sintering such as frequency, power requirement, soaking temperature, and holding time will be investigated to optimize process conditions for the volatilization of uranyl species using a reactive carrier gas in a microwave chamber

  16. Effects of lignocellulosic composition and microwave power level on the gaseous product of microwave pyrolysis

    International Nuclear Information System (INIS)

    Huang, Yu-Fong; Chiueh, Pei-Te; Kuan, Wen-Hui; Lo, Shang-Lien

    2015-01-01

    Agricultural residues are abundant resources to produce renewable energy and valuable chemicals. This study focused on the effects of lignocellulosic composition and microwave power level on the gaseous product of microwave pyrolysis of agricultural residues. When agricultural residues were under microwave radiation within 10 min, the maximum temperatures of approximately 320, 420, and 530 °C were achieved at the microwave power levels of 300, 400, and 500 W, respectively. Gas yield increased with increasing microwave power level, whereas solid and liquid yields decreased. Besides, gaseous products with higher H 2 content and higher calorific values can be obtained at higher microwave power levels. In addition to microwave power level, lignocellulosic composition was also an important factor. H 2 and CO 2 yields increased with increasing hemicellulose content, whereas CH 4 and CO yields increased with increasing cellulose content. Four empirical equations were derived to present the contributions of lignocellulosic materials to the yields of gaseous components. - Highlights: • About 530 °C was reached within 10 min at a microwave power level of 500 W. • Gas yield increased with increasing microwave power level. • A high correlation between hemicellulose content and either H 2 or CO 2 yield. • A high correlation between cellulose content and either CH 4 or CO yield. • Empirical equations depict contribution of lignocellulosic content to gas yield

  17. Microwave heating type evaporator

    International Nuclear Information System (INIS)

    Taura, Masazumi; Nishi, Akio; Morimoto, Takashi; Izumi, Jun; Tamura, Kazuo; Morooka, Akihiko.

    1987-01-01

    Purpose: To prevent evaporization stills against corrosion due to radioactive liquid wastes. Constitution: Microwaves are supplied from a microwave generator by way of a wave guide tube and through a microwave permeation window to the inside of an evaporatization still. A matching device is attached to the wave guide tube for transmitting the microwaves in order to match the impedance. When the microwaves are supplied to the inside of the evaporization still, radioactive liquid wastes supplied from a liquid feed port by way of a spray tower to the inside of the evaporization still is heated and evaporated by the induction heating of the microwaves. (Seki, T.)

  18. Remote plasma enhanced chemical deposition of non-crystalline GeO2 on Ge and Si substrates.

    Science.gov (United States)

    Lucovsky, Gerald; Zeller, Daniel

    2011-09-01

    Non-crystalline GeO2 films remote were plasma deposited at 300 degrees C onto Ge substrates after a final rinse in NH4OH. The reactant precursors gas were: (i) down-stream injected 2% GeH4 in He as the Ge precursor, and (ii) up-stream, plasma excited O2-He mixtures as the O precursor. Films annealed at 400 degrees C displayed no evidence for loss of O resulting in Ge sub-oxide formation, and for a 5-6 eV mid-gap absorption associated with formation of GeOx suboxide bonding, x deposited on Ge and annealed at 600 degrees C and 700 degrees C display spectra indicative of loss of O-atoms, accompanied with a 5.5 eV absorption. X-ray absorption spectroscopy and many-electron theory are combined to describe symmetries and degeneracies for O-vacancy bonding defects. These include comparisons with remote plasma-deposited non-crystalline SiO2 on Si substrates with SiON interfacial layers. Three different properties of remote plasma GeO2 films are addressed comparisons between (i) conduction band and band edge states of GeO2 and SiO2, and (ii) electronic structure of O-atom vacancy defects in GeO2 and SiO2, and differences between (iii) annealing of GeO2 films on Ge substrates, and Si substrates passivated with SiON interfacial transition regions important for device applications.

  19. Infrared and Raman spectroscopy study of AsS chalcogenide films prepared by plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Mochalov, Leonid; Dorosz, Dominik; Kudryashov, Mikhail; Nezhdanov, Aleksey; Usanov, Dmitry; Gogova, Daniela; Zelentsov, Sergey; Boryakov, Aleksey; Mashin, Alexandr

    2018-03-15

    AsS chalcogenide films, where As content is 60-40at.%, have been prepared via a RF non-equilibrium low-temperature argon plasma discharge, using volatile As and S as the precursors. Optical properties of the films were studied in UV-visible-NIR region in the range from 0.2 to 2.5μm. Infrared and Raman spectroscopy have been employed for the elucidation of the molecular structure of the newly developed material. It was established that PECVD films possess a higher degree of transparency (up to 80%) and a wider transparency window (>20μm) in comparison with the "usual" AsS thin films, prepared by different thermal methods, which is highly advantageous for certain applications. Copyright © 2017 Elsevier B.V. All rights reserved.

  20. Barrier properties to surrogates of hydrogenated carbon nano-films deposited on PET by plasma-enhanced chemical vapour deposition.

    Science.gov (United States)

    Oliveira, Éder C; Echegoyen, Yolanda; Nerin, Cristina; Cruz, Sandra A

    2014-01-01

    Poly(ethylene terephthalate) resin was contaminated with a series of surrogates using a US Food and Drug Administration protocol. The contaminated samples were coated with two different kinds of hydrogenated amorphous carbon thin films (a-C:H): one with diamond-like hydrogenated amorphous carbon and another with polymer-like hydrogenated carbon (PLCH) phases. To evaluate the barrier properties of the a-C:H films, migration assays were performed using food simulants. After the tests, analysis by gas chromatography with different detectors was carried out. The appearance of the films before and after the migration experiments was studied by field emission scanning electron microscopy. The results showed that a-C:H films have good barrier properties for most of the evaluated compounds, mainly when they are deposited as PLCH phase.

  1. Direct fabrication of 3D graphene on nanoporous anodic alumina by plasma-enhanced chemical vapor deposition

    Czech Academy of Sciences Publication Activity Database

    Zhan, H.; Garrett, D.J.; Apollo, N.V.; Ganesan, K.; Lau, D.; Prawer, S.; Červenka, Jiří

    2016-01-01

    Roč. 6, Jan (2016), 1-8, č. článku 19822. ISSN 2045-2322 Institutional support: RVO:68378271 Keywords : double-layer capacitors * carbon nanotube arrays * amorphous-carbon * supercapacitor applications * Raman-spectroscopy * energy -storage Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.259, year: 2016

  2. Organosilicon thin films deposited by plasma enhanced CVD:Thermal changes of chemical structure and mechanical properties

    Czech Academy of Sciences Publication Activity Database

    Zajíčková, L.; Buršíková, V.; Kučerová, Z.; Franclová, J.; Siahel, P.; Peřina, Vratislav; Macková, Anna

    2007-01-01

    Roč. 68, 5-6 (2007), s. 1255-1259 ISSN 0022-3697 R&D Projects: GA ČR GA202/07/1669 Institutional research plan: CEZ:AV0Z10480505 Keywords : hin films * organometallic compounds * plasma deposition Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.899, year: 2007

  3. Single-Step Seeded-Growth of Graphene Nanoribbons (GNRs) via Plasma-Enhanced Chemical Vapor Deposition (PECVD)

    Science.gov (United States)

    Hsu, C.-C.; Yang, K.; Tseng, W.-S.; Li, Yiliang; Li, Yilun; Tour, J. M.; Yeh, N.-C.

    One of the main challenges in the fabrication of GNRs is achieving large-scale low-cost production with high quality. Current techniques, including lithography and unzipped carbon nanotubes, are not suitable for mass production. We have recently developed a single-step PECVD growth process of high-quality graphene sheets without any active heating. By adding some substituted aromatic as seeding molecules, we are able to rapidly grow GNRs vertically on various transition-metal substrates. The morphology and electrical properties of the GNRs are dependent on the growth parameters such as the growth time, gas flow and species of the seeding molecules. On the other hand, all GNRs exhibit strong infrared and optical absorption. From studies of the Raman spectra, scanning electron microscopic images, and x-ray/ultraviolet photoelectron spectra of these GNRs as functions of the growth parameters, we propose a model for the growth mechanism. Our findings suggest that our approach opens up a pathway to large-scale, inexpensive production of GNRs for applications to supercapacitors and solar cells. This work was supported by the Grubstake Award and NSF through IQIM at Caltech.

  4. The use of microwaves for the automated production of radiopharmaceuticals

    International Nuclear Information System (INIS)

    Stone-Elander, S.A.

    1993-01-01

    Microwaves have been increasingly used over the last decade to speed up chemical transformations. Nowhere are the dramatic time gains observed so obviously important as in applications with short-lived radioisotopes where every minute gained in multi-step procedures may be important for success. Commercially-available laboratory microwave ovens adapted for remote-control or robot-assisted techniques have been used to speed up primarily incorporations of [ 18 F]fluoride. New applications with microwave cavities not only provide a more controllable microwave field for the transformations, but also lend themselves well to use in multi-step procedures under remote-control. Applications of microwave techniques in radiolabelling procedures are reviewed with respect to the chemical transformations, microwave parameters and apparatus requirements

  5. Selected chemical composition changes in microwave-convective dried parsley leaves affected by ultrasound and steaming pre-treatments - An optimization approach.

    Science.gov (United States)

    Dadan, Magdalena; Rybak, Katarzyna; Wiktor, Artur; Nowacka, Malgorzata; Zubernik, Joanna; Witrowa-Rajchert, Dorota

    2018-01-15

    Parsley leaves contain a high amount of bioactive components (especially lutein), therefore it is crucial to select the most appropriate pre-treatment and drying conditions, in order to obtain high quality of dried leaves, which was the aim of this study. The optimization was done using response surface methodology (RSM) for the following factors: microwave power (100, 200, 300W), air temperature (20, 30, 40°C) and pre-treatment variant (ultrasound, steaming and dipping as a control). Total phenolic content (TPC), antioxidant activity, chlorophyll and lutein contents (using UPLC-PDA) were determined in dried leaves. The analysed responses were dependent on the applied drying parameters and the pre-treatment type. The possibility of ultrasound and steam treatment application was proven and the optimal processing conditions were selected. Copyright © 2017 Elsevier Ltd. All rights reserved.

  6. Chemical composition and antibacterial activity of Origanum saccatum P.H. Davis essential oil obtained by solvent-free microwave extraction: comparison with hydrodistillation.

    Science.gov (United States)

    Sozmen, Fazli; Uysal, Burcu; Oksal, Birsen S; Kose, Elif Odabas; Deniz, I Gokhan

    2011-01-01

    The components of the essential oils (EOs) obtained by solvent-free microwave extraction (SFME) and hydrodistillation (HD) from endemic Origanum saccatum P.H. Davis were identified by using GC/MS. The main constituents of both EOs obtained by SFME and HD, respectively, from O. saccatum were p-cymene (72.5 and 70.6%), thymol (9.32 and 8.11%), and carvacrol (7.18 and 6.36%). The EO obtained by SFME contained substantially higher amounts of oxygenated compounds and lower amounts of monoterpenes than did the EO obtained by HD. The antibacterial activities of the EOs obtained by SFME and HD were evaluated with the disc diffusion method by comparison with 10 different bacterial strains. The antibacterial activity of the EO extracted by SFME was found to be more effective than that of the EO extracted by HD against seven of the tested bacteria.

  7. Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho; Cha, Suk Won, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical and Aerospace Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-744 (Korea, Republic of); Ji, Sanghoon [Graduate School of Convergence Science and Technology, Seoul National University, Iui-dong, Yeongtong-gu, Suwon 443-270 (Korea, Republic of); Hong, Soon Wook; Koo, Bongjun; Kim, Young-Beom, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of); An, Jihwan [Manufacturing Systems and Design Engineering Programme, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 139-743 (Korea, Republic of)

    2016-01-15

    Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solid oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.

  8. Low-temperature formation of crystalline Si:H/Ge:H heterostructures by plasma-enhanced CVD in combination with Ni-nanodots seeding nucleation

    Science.gov (United States)

    Lu, Yimin; Makihara, Katsunori; Takeuchi, Daichi; Ikeda, Mitsuhisa; Ohta, Akio; Miyazaki, Seiichi

    2017-06-01

    Hydrogenated microcrystalline (µc) Si/Ge heterostructures were prepared on quartz substrates by plasma-enhanced chemical vapor deposition (CVD) from VHF inductively coupled plasma of SiH4 just after GeH4 employing Ni nanodots (NDs) as seeds for crystalline nucleation. The crystallinity of the films and the progress of grain growth were characterized by Raman scattering spectroscopy and atomic force microscopy (AFM), respectively. When the Ge films were grown on Ni-NDs at 250 °C, the growth of µc-Ge films with crystallinity as high as 80% was realized without an amorphous phase near the Ge film/quartz substrate interface. After the subsequent Si film deposition at 250 °C, fine grains were formed in the early stages of film growth on µc-Ge films with compositional mixing (µc-Si0.85Ge0.15:H) caused by the release of large lattice mismatch between c-Si and c-Ge. With further increase in Si:H film thickness, the formation of large grain structures accompanied by fine grains was promoted. These results suggest that crystalline Si/Ge heterojunctions can be used for efficient carrier collection in solar cell application.

  9. Microwave-Assisted Synthesis of Phenothiazine and Quinoline Derivatives

    Science.gov (United States)

    Găină, Luiza; Cristea, Castelia; Moldovan, Claudia; Porumb, Dan; Surducan, Emanoil; Deleanu, Călin; Mahamoud, Abdalah; Barbe, Jacques; Silberg, Ioan A.

    2007-01-01

    Application of a dynamic microwave power system in the chemical synthesis of some phenothiazine and quinoline derivatives is described. Heterocyclic ring formation, aromatic nucleophilic substitution and heterocyclic aldehydes/ketones condensation reactions were performed on solid support, or under solvent free reaction conditions. The microwave-assisted Duff formylation of phenothiazine was achieved. Comparison of microwave-assisted synthesis with the conventional synthetic methods demonstrates advantages related to shorter reaction times and in some cases better reaction yields.

  10. Microwave energy transmission

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, Hiroshi [Kyoto Univ. (Japan)

    1989-03-05

    Laying stress on the technological problems and effect on the environment of microwave energy transmission, recent scientific and engineering problems and related subjects are described. Because no fuel is required for the solar power generation, the power generation system can not be considered as an expensive one when the unit cost of energy is taken into consideration. Some of the important technological problems in the microwave energy transmission are accurate microwave beam control technology to receiving stations and improvement in the efficiency of transmission system. Microwave energy beam has effects on living bodies, communication, and plasma atmosphere of the earth. Microwave energy transmission using a space flyer unit is scheduled. Its objective is the development of microwave wireless transmission technology and the study of the correlation between high power microwave and ionosphere plasma. Experiments on such a small scale application as a microwave driven space ship to bring results seem also important. 12 refs., 13 figs.

  11. Advances in microwaves 7

    CERN Document Server

    Young, Leo

    2013-01-01

    Advances in Microwaves, Volume 7 covers the developments in the study of microwaves. The book discusses the effect of surface roughness on the propagation of the TEM mode, as well as the voltage breakdown of microwave antennas. The text also describes the theory and design considerations of single slotted-waveguide linear arrays and the techniques and theories that led to the achievement of wide bandwidths and ultralow noise temperatures for communication applications. The book will prove invaluable to microwave engineers.

  12. Microwave processing heats up

    Science.gov (United States)

    Microwaves are a common appliance in many households. In the United States microwave heating is the third most popular domestic heating method food foods. Microwave heating is also a commercial food processing technology that has been applied for cooking, drying, and tempering foods. It's use in ...

  13. Cosmic Microwave Background Timeline

    Science.gov (United States)

    Cosmic Microwave Background Timeline 1934 : Richard Tolman shows that blackbody radiation in an will have a blackbody cosmic microwave background with temperature about 5 K 1955: Tigran Shmaonov anisotropy in the cosmic microwave background, this strongly supports the big bang model with gravitational

  14. Application of microwave heating to a polyesterification plant

    NARCIS (Netherlands)

    Komorowska-Durka, M.

    2015-01-01

    Utilizing microwave irradiation, a fundamentally different method of the energy transfer, to the chemical process units can potentially be advantageous compared to the conventional heating, inter alia due to the selective nature of interaction of the microwaves with the matter. This doctoral

  15. Proceedings of microwave processing of materials 3

    International Nuclear Information System (INIS)

    Beatty, R.L.

    1992-01-01

    This book contains proceedings of the third MRS Symposium on Microwave Processing of Materials. Topics covered include: Microwave Processing Overviews, Numerical Modeling Techniques, Microwave Processing System Design, Microwave/Plasma Processing, Microwave/Materials Interactions, Microwave Processing of Ceramics, Microwave Processing of Polymers, Microwave Processing of Hazardous Wastes, Microwave NDE Techniques and Dielectric Properties and Measurements

  16. Microwave heating denitration device

    International Nuclear Information System (INIS)

    Sato, Hajime; Morisue, Tetsuo.

    1984-01-01

    Purpose: To suppress energy consumption due to a reflection of microwaves. Constitution: Microwaves are irradiated to the nitrate solution containing nuclear fuel materials, to cause denitrating reaction under heating and obtain oxides of the nuclear fuel materials. A microwave heating and evaporation can for reserving the nitrate solution is disposed slantwise relative to the horizontal plane and a microwave heating device is connected to the evaporation can, and inert gases for agitation are supplied to the solution within the can. Since the evaporation can is slanted, wasteful energy consumption due to the reflection of the microwaves can be suppressed. (Moriyama, K.)

  17. Comparative Analysis of Chemical Composition, Antioxidant and Antibacterial Activities of Mentha rotundifolia Essential oils from Algeria extracted by microwave and hydrodistillation

    Directory of Open Access Journals (Sweden)

    Nacéra HADDACHE

    2017-04-01

    Full Text Available The essential oil of Mentha rotundifolia (L. Huds growing wild from East Algeria (Naciria at 60Km in East of Algiers obtained by hydrodistillation (HD° and a microwave distillation process (MD have been analysed by means of GC-FID and GC/MS in combination with retention indices. In total, 54 constituents were identified (accounting for 96.7 and 95.6% in HD and MD oils, respectively. The main components were piperitone oxide (25.1 and 29.1% in HD and MD oils, respectively, piperitenone oxide (8.9 – 11.8%, terpinen-4-ol (9.3 – 3.4%, β-caryophyllene (5.4 – 7.3%, allo-aromadendrene (5.3 - 6.4% and Dgermacrène (5.4 – 7.1%. In comparison with HD, MD allows to obtain oil in a very short time, with the reduction of solvent used similar yields, comparable qualities and substantial savings of energy. The antioxidant activity was determined according to the ability of the tested samples to scavenge the free radicals 2,2- diphenyl-1-picrylhydrazyl (DPPH*. The essential oil were slightly active (32.6 and 21.8% in HD and MD oils, respectively comparing with BHT (64.7%. The antibacterial activities of the essential oils indicated that Staphylococcus aureus was the more sensitive strain tested to the oils of Mentha rotundifolia with the strongest inhibition zone 28.3 for HD and 26.5 mm for MO.

  18. Microwave waste processing technology overview

    Energy Technology Data Exchange (ETDEWEB)

    Petersen, R.D.

    1993-02-01

    Applications using microwave energy in the chemical processing industry have increased within the last ten years. Recently, interest in waste treatment applications process development, especially solidification, has grown. Microwave waste processing offers many advantages over conventional waste treatment technologies. These advantages include a high density, leach resistant, robust waste form, volume and toxicity reduction, favorable economics, in-container treatment, good public acceptance, isolated equipment, and instantaneous energy control. The results from the {open_quotes}cold{close_quotes} demonstration scale testing at the Rocky Flats nuclear weapons facility are described. Preliminary results for a transuranic (TRU) precipitation sludge indicate that volume reductions of over 80% are achievable over the current immobilization process. An economic evaluation performed demonstrated cost savings of $11.68 per pound compared to the immobilization process currently in use on wet sludge.

  19. Microwave waste processing technology overview

    International Nuclear Information System (INIS)

    Petersen, R.D.

    1993-02-01

    Applications using microwave energy in the chemical processing industry have increased within the last ten years. Recently, interest in waste treatment applications process development, especially solidification, has grown. Microwave waste processing offers many advantages over conventional waste treatment technologies. These advantages include a high density, leach resistant, robust waste form, volume and toxicity reduction, favorable economics, in-container treatment, good public acceptance, isolated equipment, and instantaneous energy control. The results from the open-quotes coldclose quotes demonstration scale testing at the Rocky Flats nuclear weapons facility are described. Preliminary results for a transuranic (TRU) precipitation sludge indicate that volume reductions of over 80% are achievable over the current immobilization process. An economic evaluation performed demonstrated cost savings of $11.68 per pound compared to the immobilization process currently in use on wet sludge

  20. Metallo–organic compound-based plasma enhanced CVD of ZrO2 ...

    Indian Academy of Sciences (India)

    Unknown

    require a passivation barrier (oxynitride or nitride) to prevent interfacial layer growth (Ngai et al 2000). Zirconium dioxide (ZrO2) is one of the few high-k dielectrics predicted to be thermodynamically stable in contact with silicon (Qi et al 1999). ZrO2 was also characterized for low electrical conductivity and chemical inertness ...

  1. Plasma-Enhanced Combustion of Hydrocarbon Fuels and Fuel Blends Using Nanosecond Pulsed Discharges

    Energy Technology Data Exchange (ETDEWEB)

    Cappelli, Mark; Mungal, M Godfrey

    2014-10-28

    This project had as its goals the study of fundamental physical and chemical processes relevant to the sustained premixed and non-premixed jet ignition/combustion of low grade fuels or fuels under adverse flow conditions using non-equilibrium pulsed nanosecond discharges.

  2. Microwave Technologies as Part of an Integrated Weed Management Strategy: A Review

    Directory of Open Access Journals (Sweden)

    Graham Brodie

    2012-01-01

    Full Text Available Interest in controlling weed plants using radio frequency or microwave energy has been growing in recent years because of the growing concerns about herbicide resistance and chemical residues in the environment. This paper reviews the prospects of using microwave energy to manage weeds. Microwave energy effectively kills weed plants and their seeds; however, most studies have focused on applying the microwave energy over a sizable area, which requires about ten times the energy that is embodied in conventional chemical treatments to achieve effective weed control. A closer analysis of the microwave heating phenomenon suggests that thermal runaway can reduce microwave weed treatment time by at least one order of magnitude. If thermal runaway can be induced in weed plants, the energy costs associated with microwave weed management would be comparable with chemical weed control.

  3. Microwave-assisted 'greener' synthesis of organics and nanomaterials

    Science.gov (United States)

    Microwave selective heating techniques in conjunction with greener reaction media are dramatically reducing chemical waste and reaction times in several organic transformations and material synthesis. This presentation summarizes author’s own experience in developing MW-assisted ...

  4. Type of precursor and synthesis of silicon oxycarbide (SiOxCyH) thin films with a surfatron microwave oxygen/argon plasma

    International Nuclear Information System (INIS)

    Walkiewicz-Pietrzykowska, Agnieszka; Espinos, J. P.; Gonzalez-Elipe, Agustin R.

    2006-01-01

    Siliconelike thin films (i.e., SiO x C y H z ) were prepared in a microwave plasma enhanced chemical vapor deposition reactor from structurally different organosilicon precursors [i.e., hexamethyldisiloxane (HMDSO), dimethylsilane (DMS), and tetramethylsilane (TMS)]. The films were deposited at room temperature by using different oxygen/argon ratios in the plasma gas. By changing the type of precursor and the relative concentration of oxygen in the plasma, thin films with different compositions (i.e., O/C ratio) and properties are obtained. In general, raising the oxygen concentration in the plasma produces the progressive removal of the organic moieties from the films whose composition and structure then approach those of silicon dioxide. The deposition rate was highly dependent on the type of precursor, following the order HMDSO>>DMS>TMS. The polarizabilities, optical band gaps, and surface free energy of the films also depended on the thin film composition and structure. It is proposed that the Si-O bonds existing in HMDSO is the main factor controlling the distinct reactivity of this precursor and is also responsible for the different compositions and properties of the SiO x C y H z thin films prepared with very low or no oxygen in the plasma gas

  5. XPS and FTIR spectroscopic study on microwave treated high phosphorus iron ore

    International Nuclear Information System (INIS)

    Omran, Mamdouh; Fabritius, Timo; Elmahdy, Ahmed M.; Abdel-Khalek, Nagui A.; El-Aref, Mortada; Elmanawi, Abd El-Hamid

    2015-01-01

    Highlights: • The effect of microwave radiation on structure and chemical state of high phosphorus iron ore was studied. • FTIR analyses showed that after microwave radiation the functional chemical groups of phosphorus bearing minerals (fluorapatite) dissociated. • High resolution XPS analyses of Fe 2p peaks showed that after microwave radiation a portion of Fe(+III) was reduced to Fe(+II). • Microwave radiation had a positive effect on the magnetic properties of iron oxide, through formation of ferromagnetic phases. - Abstract: A growing interest in microwave heating has emerged recently. Several potential microwave applications regarding minerals’ processing have been investigated. This paper investigates the effect of microwave radiation on Egyptian high phosphorus iron ore. Three different iron ore samples have varying Fe 2 O 3 and P 2 O 5 contents and mineralogical textures were studied. A comparative study has been carried out between untreated and microwave treated iron ore. XRD and FTIR analyses showed that after microwave radiation the crystallinity of iron bearing minerals (hematite) increased, while the functional chemical groups of phosphorus bearing minerals (fluorapatite) and other gangues dissociated. High resolution XPS analyses of Fe 2p peaks showed that after microwave radiation a portion of Fe(+III) was reduced to Fe(+II). This means that after microwave radiation iron oxide (hematite, Fe 3+ ) transformed into more magnetic phase. The results indicated that microwave radiation had a positive effect on the magnetic properties of iron oxide, through formation of ferromagnetic phases

  6. Determination of 13 endocrine disrupting chemicals in environmental solid samples using microwave-assisted solvent extraction and continuous solid-phase extraction followed by gas chromatography-mass spectrometry.

    Science.gov (United States)

    Azzouz, Abdelmonaim; Ballesteros, Evaristo

    2016-01-01

    Soil can contain large numbers of endocrine disrupting chemicals (EDCs). The varied physicochemical properties of EDCs constitute a great challenge to their determination in this type of environmental matrix. In this work, an analytical method was developed for the simultaneous determination of various classes of EDCs, including parabens, alkylphenols, phenylphenols, bisphenol A, and triclosan, in soils, sediments, and sewage sludge. The method uses microwave-assisted extraction (MAE) in combination with continuous solid-phase extraction for determination by gas chromatography-mass spectrometry. A systematic comparison of the MAE results with those of ultrasound-assisted and Soxhlet extraction showed MAE to provide the highest extraction efficiency (close to 100%) in the shortest extraction time (3 min). The proposed method provides a linear response over the range 2.0 - 5000 ng kg(-1) and features limits of detection from 0.5 to 4.5 ng kg(-1) depending on the properties of the EDC. The method was successfully applied to the determination of target compounds in agricultural soils, pond and river sediments, and sewage sludge. The sewage sludge samples were found to contain all target compounds except benzylparaben at concentration levels from 36 to 164 ng kg(-1). By contrast, the other types of samples contained fewer EDCs and at lower concentrations (5.6 - 84 ng kg(-1)).

  7. Fuel gas production by microwave plasma in liquid

    International Nuclear Information System (INIS)

    Nomura, Shinfuku; Toyota, Hiromichi; Tawara, Michinaga; Yamashita, Hiroshi; Matsumoto, Kenya

    2006-01-01

    We propose to apply plasma in liquid to replace gas-phase plasma because we expect much higher reaction rates for the chemical deposition of plasma in liquid than for chemical vapor deposition. A reactor for producing microwave plasma in a liquid could produce plasma in hydrocarbon liquids and waste oils. Generated gases consist of up to 81% hydrogen by volume. We confirmed that fuel gases such as methane and ethylene can be produced by microwave plasma in liquid

  8. Plasma relativistic microwave electronics

    International Nuclear Information System (INIS)

    Kuzelev, M.V.; Loza, O.T.; Rukhadze, A.A.; Strelkov, P.S.; Shkvarunets, A.G.

    2001-01-01

    One formulated the principles of plasma relativistic microwave electronics based on the induced Cherenkov radiation of electromagnetic waves at interaction of a relativistic electron beam with plasma. One developed the theory of plasma relativistic generators and accelerators of microwave radiation, designed and studied the prototypes of such devices. One studied theoretically the mechanisms of radiation, calculated the efficiencies and the frequency spectra of plasma relativistic microwave generators and accelerators. The theory findings are proved by the experiment: intensity of the designed sources of microwave radiation is equal to 500 μW, the frequency of microwave radiation is increased by 7 times (from 4 up to 28 GHz), the width of radiation frequency band may vary from several up to 100%. The designed sources of microwave radiation are no else compared in the electronics [ru

  9. Microwave joining of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Silberglitt, R.; Ahmad, I. [FM Technologies, Inc., Fairfax, VA (United States); Black, W.M. [George Mason Univ., Fairfax, VA (United States)] [and others

    1995-05-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on optimization of time-temperature profiles, production of SiC from chemical precursors, and design of new applicators for joining of long tubes.

  10. Simultaneous Microwave Drying and Disinfectionof Flooded Books

    Czech Academy of Sciences Publication Activity Database

    Hájek, Milan; Ďurovič, M.; Paulusová, H.; Weberová, L.

    2011-01-01

    Roč. 31, č. 1 (2011), s. 1-7 ISSN 0034-5806 Institutional research plan: CEZ:AV0Z40720504 Keywords : drying * disinfection * microwave Subject RIV: CI - Industrial Chemistry, Chemical Engineering Impact factor: 0.206, year: 2011 http://www.degruyter.com/view/j/rest.2011.32.issue-1/rest.2011.001/rest.2011.001. xml

  11. Microwave Resonators and Filters

    Science.gov (United States)

    2015-12-22

    1 Microwave Resonators and Filters Daniel E. Oates MIT Lincoln Laboratory 244 Wood St. Lexington, MA 02478 USA Email: oates@ll.mit.edu...explained in other chapters, the surface resistance of superconductors at microwave frequencies can be as much as three orders of magnitude lower than the...resonators and filters in the first edition of this handbook (Z.-Y. Shen 2003) discussed the then state of the art of microwave frequency applications

  12. Microwave and RF engineering

    CERN Document Server

    Sorrentino, Roberto

    2010-01-01

    An essential text for both students and professionals, combining detailed theory with clear practical guidance This outstanding book explores a large spectrum of topics within microwave and radio frequency (RF) engineering, encompassing electromagnetic theory, microwave circuits and components. It provides thorough descriptions of the most common microwave test instruments and advises on semiconductor device modelling. With examples taken from the authors' own experience, this book also covers:network and signal theory;electronic technology with guided electromagnetic pr

  13. Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

    International Nuclear Information System (INIS)

    Zhang Jian; Yang Hui; Zhang Qilong; Dong Shurong; Luo, J. K.

    2013-01-01

    ZnO films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate resistive memory behavior. The bipolar resistance switching properties were observed in the Al/PEALD-ZnO/Pt devices. The resistance ratio for the high and low resistance states (HRS/LRS) is more than 10 3 , better than ZnO devices deposited by other methods. The dominant conduction mechanisms of HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. The resistive switching behavior is induced upon the formation/disruption of conducting filaments. This study demonstrated that the PEALD-ZnO films have better properties for the application in 3D resistance random access memory.

  14. Advanced microwave processing concepts

    Energy Technology Data Exchange (ETDEWEB)

    Lauf, R.J.; McMillan, A.D.; Paulauskas, F.L. [Oak Ridge National Laboratory, TN (United States)

    1995-05-01

    The purpose of this work is to explore the feasibility of several advanced microwave processing concepts to develop new energy-efficient materials and processes. The project includes two tasks: (1) commercialization of the variable-frequency microwave furnace; and (2) microwave curing of polymer composites. The variable frequency microwave furnace, whose initial conception and design was funded by the AIC Materials Program, will allow us, for the first time, to conduct microwave processing studies over a wide frequency range. This novel design uses a high-power traveling wave tube (TWT) originally developed for electronic warfare. By using this microwave source, one can not only select individual microwave frequencies for particular experiments, but also achieve uniform power densities over a large area by the superposition of many different frequencies. Microwave curing of thermoset resins will be studied because it hold the potential of in-situ curing of continuous-fiber composites for strong, lightweight components. Microwave heating can shorten curing times, provided issues of scaleup, uniformity, and thermal management can be adequately addressed.

  15. Advances in microwaves 3

    CERN Document Server

    Young, Leo

    2013-01-01

    Advances in Microwaves, Volume 3 covers the advances and applications of microwave signal transmission and Gunn devices. This volume contains six chapters and begins with descriptions of ground-station antennas for space communications. The succeeding chapters deal with beam waveguides, which offer interesting possibilities for transmitting microwave energy, as well as with parallel or tubular beams from antenna apertures. A chapter discusses the electron transfer mechanism and the velocity-field characteristics, with a particular emphasis on the microwave properties of Gunn oscillators. The l

  16. The microwave market

    International Nuclear Information System (INIS)

    Bybokas, J.

    1989-01-01

    As superconductors move from the laboratory to the marketplace, it becomes more important for researchers and manufacturers to understand the markets for this technology. The large market for microwave systems represents a major opportunity for high-T c superconductors. Conductor losses are a primary design limitation in conventional microwave systems. The low losses of superconductors at microwave frequencies will allow component designers and system designers to improve their products in many ways. The most important market segments for microwave systems are outlined in this discussion

  17. A Review of Microwave-Assisted Reactions for Biodiesel Production

    Directory of Open Access Journals (Sweden)

    Saifuddin Nomanbhay

    2017-06-01

    Full Text Available The conversion of biomass into chemicals and biofuels is an active research area as trends move to replace fossil fuels with renewable resources due to society’s increased concern towards sustainability. In this context, microwave processing has emerged as a tool in organic synthesis and plays an important role in developing a more sustainable world. Integration of processing methods with microwave irradiation has resulted in a great reduction in the time required for many processes, while the reaction efficiencies have been increased markedly. Microwave processing produces a higher yield with a cleaner profile in comparison to other methods. The microwave processing is reported to be a better heating method than the conventional methods due to its unique thermal and non-thermal effects. This paper provides an insight into the theoretical aspects of microwave irradiation practices and highlights the importance of microwave processing. The potential of the microwave technology to accomplish superior outcomes over the conventional methods in biodiesel production is presented. A green process for biodiesel production using a non-catalytic method is still new and very costly because of the supercritical condition requirement. Hence, non-catalytic biodiesel conversion under ambient pressure using microwave technology must be developed, as the energy utilization for microwave-based biodiesel synthesis is reported to be lower and cost-effective.

  18. Applications of microwave radiation environmental remediation technologies

    International Nuclear Information System (INIS)

    Krause, T.R.; Helt, J.E.

    1993-01-01

    A growing number of environmental remediation technologies (e.g., drying, melting, or sintering) utilize microwave radiation as an integral part of the process. An increasing number of novel applications, such as sustaining low-temperature plasmas or enhancing chemical reactivity, are also being developed. An overview of such technologies being developed by the Department of Energy is presented. A specific example being developed at Argonne National Laboratory, microwave-induced plasma reactors for the destruction of volatile organic compounds, is discussed in more detail

  19. Integrated microwave photonics

    NARCIS (Netherlands)

    Marpaung, D.A.I.; Roeloffzen, C.G.H.; Heideman, Rene; Leinse, Arne; Sales, S.; Capmany, J.

    2013-01-01

    Microwave photonics (MWP) is an emerging field in which radio frequency (RF) signals are generated, distributed, processed and analyzed using the strength of photonic techniques. It is a technology that enables various functionalities which are not feasible to achieve only in the microwave domain. A

  20. Microwave Breast Imaging Techniques

    DEFF Research Database (Denmark)

    Zhurbenko, Vitaliy; Rubæk, Tonny

    2010-01-01

    This paper outlines the applicability of microwave radiation for breast cancer detection. Microwave imaging systems are categorized based on their hardware architecture. The advantages and disadvantages of various imaging techniques are discussed. The fundamental tradeoffs are indicated between...... various requirements to be fulfilled in the design of an imaging system for breast cancer detection and some strategies to overcome these limitations....

  1. MICROWAVES IN ORGANIC SYNTHESIS

    Science.gov (United States)

    The effect of microwaves, a non-ionizing radiation, on organic reactions is described both in polar solvents and under solvent-free conditions. The special applications are highlighted in the context of solventless organic synthesis which involve microwave (MW) exposure of neat r...

  2. Variable frequency microwave heating apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Bible, D.W.; Lauf, R.J.; Johnson, A.C.; Thigpen, L.T.

    1999-10-05

    A variable frequency microwave heating apparatus (10) designed to allow modulation of the frequency of the microwaves introduced into a multi-mode microwave cavity (34) for testing or other selected applications. The variable frequency microwave heating apparatus (10) includes a microwave signal generator (12) and a high-power microwave amplifier (20) or a high-power microwave oscillator (14). A power supply (22) is provided for operation of the high-power microwave oscillator (14) or microwave amplifier (20). A directional coupler (24) is provided for detecting the direction and amplitude of signals incident upon and reflected from the microwave cavity (34). A first power meter (30) is provided for measuring the power delivered to the microwave furnace (32). A second power meter (26) detects the magnitude of reflected power. Reflected power is dissipated in the reflected power load (28).

  3. Mechanism for microwave heating of 1-(4'-cyanophenyl)-4-propylcyclohexane characterized by in situ microwave irradiation NMR spectroscopy.

    Science.gov (United States)

    Tasei, Yugo; Yamakami, Takuya; Kawamura, Izuru; Fujito, Teruaki; Ushida, Kiminori; Sato, Motoyasu; Naito, Akira

    2015-05-01

    Microwave heating is widely used to accelerate organic reactions and enhance the activity of enzymes. However, the detailed molecular mechanism for the effect of microwave on chemical reactions is not yet fully understood. To investigate the effects of microwave heating on organic compounds, we have developed an in situ microwave irradiation NMR spectroscopy. (1)H NMR spectra of 1-(4'-cyanophenyl)-4-propylcyclohexane (PCH3) in the liquid crystalline and isotropic phases were observed under microwave irradiation. When the temperature was regulated at slightly higher than the phase transition temperature (Tc=45 °C) under a gas flow temperature control system, liquid crystalline phase mostly changed to the isotropic phase. Under microwave irradiation and with the gas flow temperature maintained at 20 °C, which is 25 °C below the Tc, the isotropic phase appeared stationary as an approximately 2% fraction in the liquid crystalline phase. The temperature of the liquid crystalline state was estimated to be 38 °C according to the line width, which is at least 7 °C lower than the Tc. The temperature of this isotropic phase should be higher than 45 °C, which is considered to be a non-equilibrium local heating state induced by microwave irradiation. Microwaves at a power of 195 W were irradiated to the isotropic phase of PCH3 at 50 °C and after 2 min, the temperature reached 220 °C. The temperature of PCH3 under microwave irradiation was estimated by measurement of the chemical shift changes of individual protons in the molecule. These results demonstrate that microwave heating generates very high temperature within a short time using an in situ microwave irradiation NMR spectrometer. Copyright © 2015 Elsevier Inc. All rights reserved.

  4. Fast surface modification by microwave assisted click reactions on silicon substrates

    NARCIS (Netherlands)

    Haensch, C.; Erdmenger, T.; Fijten, M.W.M.; Höppener, S.; Schubert, U.S.

    2009-01-01

    Microwave irradiation has been used for the chemical modification of functional monolayers on silicon surfaces. The thermal and chemical stability of these layers was tested under microwave irradiation to investigate the possibility to use this alternative heating process for the surface

  5. Atmospheric-pressure-plasma-enhanced fabrication of nonfouling nanocoatings for 316 stainless steel biomaterial interfaces

    Science.gov (United States)

    Huang, Chun; Lin, Jin-He; Li, Chi-Heng; Yu, I.-Chun; Chen, Ting-Lun

    2018-03-01

    Atmospheric-pressure plasma, which was generated with electrical RF power, was fed to a tetramethyldisiloxane/argon gas mixture to prepare bioinert organosilicon coatings for 316 stainless steel. The surface characteristics of atmospheric-pressure-plasma-deposited nanocoatings were evaluated as a function of RF plasma power, precursor gas flow, and plasma working distance. After surface deposition, the chemical features, elemental compositions, and surface morphologies of the organosilicon nanocoatings were examined. It was found that RF plasma power and plasma working distance are the essential factors that affect the formation of plasma-deposited nanocoatings. Fourier transform infrared spectroscopy spectra indicate that the atmospheric-pressure-plasma-deposited nanocoatings formed showed inorganic features. Atomic force microscopy analysis showed the surface roughness variation of the plasma-deposited nanocoating at different RF plasma powers and plasma working distances during surface treatment. From these surface analyses, it was found that the plasma-deposited organosilicon nanocoatings under specific operational conditions have relatively hydrophobic and inorganic characteristics, which are essential for producing an anti-biofouling interface on 316 stainless steel. The experimental results also show that atmospheric-pressure-plasma-deposited nanocoatings have potential use as a cell-resistant layer on 316 stainless steel.

  6. Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2 : Large area, thickness control and tuneable morphology

    NARCIS (Netherlands)

    Sharma, A.; Verheijen, M.A.; Wu, L.; Karwal, S.; Vandalon, V.; Knoops, H.C.M.; Sundaram, R.S.; Hofmann, J.P.; Kessels, W.M.M.; Bol, A.A.

    2018-01-01

    Low-temperature controllable synthesis of monolayer-to-multilayer thick MoS2 with tuneable morphology is demonstrated by using plasma enhanced atomic layer deposition (PEALD). The characteristic self-limiting ALD growth with a growth-per-cycle of 0.1 nm per cycle and digital thickness control down

  7. Kinetic and Mechanism Study of Vanadium Acid Leaching from Black Shale Using Microwave Heating Method

    Science.gov (United States)

    Wang, Jing-peng; Zhang, Yi-min; Huang, Jing; Liu, Tao

    2018-06-01

    The leaching kinetics of the vanadium leaching process were investigated by the comparison of microwave heating and conventional heating methods. Microwave heating with CaF2 had a synergistic effect and improved the vanadium leaching efficiency. In contrast to conventional heating leaching, microwave heating accelerated the vanadium leaching rate by approximately 1-3% and by approximately 15% when CaF2 was also used. The kinetics analysis showed that the calculated activation energy decreased in the microwave heating method in the presence and absence of CaF2. The control procedure of leaching also changed from a chemical reaction control step to a mixed chemical diffusion control step upon the addition of CaF2. Microwave heating was shown to be suitable for leaching systems with diffusion or mixed chemical diffusion control steps when the target mineral does not have a microwave absorbing ability.

  8. Kinetic and Mechanism Study of Vanadium Acid Leaching from Black Shale Using Microwave Heating Method

    Science.gov (United States)

    Wang, Jing-peng; Zhang, Yi-min; Huang, Jing; Liu, Tao

    2018-04-01

    The leaching kinetics of the vanadium leaching process were investigated by the comparison of microwave heating and conventional heating methods. Microwave heating with CaF2 had a synergistic effect and improved the vanadium leaching efficiency. In contrast to conventional heating leaching, microwave heating accelerated the vanadium leaching rate by approximately 1-3% and by approximately 15% when CaF2 was also used. The kinetics analysis showed that the calculated activation energy decreased in the microwave heating method in the presence and absence of CaF2. The control procedure of leaching also changed from a chemical reaction control step to a mixed chemical diffusion control step upon the addition of CaF2. Microwave heating was shown to be suitable for leaching systems with diffusion or mixed chemical diffusion control steps when the target mineral does not have a microwave absorbing ability.

  9. Gold Nanoparticle Microwave Synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Krantz, Kelsie E. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Christian, Jonathan H. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Coopersmith, Kaitlin [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Washington, II, Aaron L. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Murph, Simona H. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

    2016-07-27

    At the nanometer scale, numerous compounds display different properties than those found in bulk material that can prove useful in areas such as medicinal chemistry. Gold nanoparticles, for example, display promise in newly developed hyperthermia therapies for cancer treatment. Currently, gold nanoparticle synthesis is performed via the hot injection technique which has large variability in final particle size and a longer reaction time. One underdeveloped area by which these particles could be produced is through microwave synthesis. To initiate heating, microwaves agitate polar molecules creating a vibration that gives off the heat energy needed. Previous studies have used microwaves for gold nanoparticle synthesis; however, polar solvents were used that partially absorbed incident microwaves, leading to partial thermal heating of the sample rather than taking full advantage of the microwave to solely heat the gold nanoparticle precursors in a non-polar solution. Through this project, microwaves were utilized as the sole heat source, and non-polar solvents were used to explore the effects of microwave heating only as pertains to the precursor material. Our findings show that the use of non-polar solvents allows for more rapid heating as compared to polar solvents, and a reduction in reaction time from 10 minutes to 1 minute; this maximizes the efficiency of the reaction, and allows for reproducibility in the size/shape of the fabricated nanoparticles.

  10. Gold Nanoparticle Microwave Synthesis

    International Nuclear Information System (INIS)

    Krantz, Kelsie E.; Christian, Jonathan H.; Coopersmith, Kaitlin; Washington II, Aaron L.; Murph, Simona H.

    2016-01-01

    At the nanometer scale, numerous compounds display different properties than those found in bulk material that can prove useful in areas such as medicinal chemistry. Gold nanoparticles, for example, display promise in newly developed hyperthermia therapies for cancer treatment. Currently, gold nanoparticle synthesis is performed via the hot injection technique which has large variability in final particle size and a longer reaction time. One underdeveloped area by which these particles could be produced is through microwave synthesis. To initiate heating, microwaves agitate polar molecules creating a vibration that gives off the heat energy needed. Previous studies have used microwaves for gold nanoparticle synthesis; however, polar solvents were used that partially absorbed incident microwaves, leading to partial thermal heating of the sample rather than taking full advantage of the microwave to solely heat the gold nanoparticle precursors in a non-polar solution. Through this project, microwaves were utilized as the sole heat source, and non-polar solvents were used to explore the effects of microwave heating only as pertains to the precursor material. Our findings show that the use of non-polar solvents allows for more rapid heating as compared to polar solvents, and a reduction in reaction time from 10 minutes to 1 minute; this maximizes the efficiency of the reaction, and allows for reproducibility in the size/shape of the fabricated nanoparticles.

  11. Advances in microwaves

    CERN Document Server

    Young, Leo

    1967-01-01

    Advances in Microwaves, Volume 2 focuses on the developments in microwave solid-state devices and circuits. This volume contains six chapters that also describe the design and applications of diplexers and multiplexers. The first chapter deals with the parameters of the tunnel diode, oscillators, amplifiers and frequency converter, followed by a simple physical description and the basic operating principles of the solid state devices currently capable of generating coherent microwave power, including transistors, harmonic generators, and tunnel, avalanche transit time, and diodes. The next ch

  12. Advances in microwaves 4

    CERN Document Server

    Young, Leo

    2013-01-01

    Advances in Microwaves, Volume 4 covers some innovations in the devices and applications of microwaves. This volume contains three chapters and begins with a discussion of the application of microwave phasers and time delay elements as beam steering elements in array radars. The next chapter provides first an overview of the technical aspects and different types of millimeter waveguides, followed by a survey of their application to railroads. The last chapter examines the general mode of conversion properties of nonuniform waveguides, such as waveguide tapers, using converted Maxwell's equatio

  13. Catalyst-free growth and tailoring morphology of zinc oxide nanostructures by plasma-enhanced deposition at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Chen, W. Z. [Quanzhou Normal University, Key Laboratory of Information Functional Material for Fujian Higher Education, College of Physics & Information Engineering (China); Wang, B. B. [Chongqing University of Technology, College of Chemical Engineering (China); Qu, Y. Z.; Huang, X. [Xiamen University, College of Energy, Xiang’an Campus (China); Ostrikov, K. [Queensland University of Technology, School of Chemistry, Physics and Mechanical Engineering (Australia); Levchenko, I.; Xu, S. [Nanyang Technological University, Plasma Sources and Applications Centre, National Institute of Education (Singapore); Cheng, Q. J., E-mail: qijin.cheng@xmu.edu.cn [Xiamen University, College of Energy, Xiang’an Campus (China)

    2017-03-15

    ZnO nanostructures were grown under different deposition conditions from Zn films pre-deposited onto Si substrates in O{sub 2}-Ar plasma, ignited in an advanced custom-designed plasma-enhanced horizontal tube furnace deposition system. The morphology and structure of the synthesized ZnO nanostructures were systematically and extensively investigated by scanning and transmission electron microscopy, Raman spectroscopy, and atomic force microscopy. It is shown that the morphology of ZnO nanostructures changes from the hybrid ZnO/nanoparticle and nanorod system to the mixture of ZnO nanosheets and nanorods when the growth temperature increases, and the density of ZnO nanorods increases with the increase of oxygen flow rate. The formation of ZnO nanostructures was explained in terms of motion of Zn atoms on the Zn nanoparticle surfaces, and to the local melting of Zn nanoparticles or nanosheets. Moreover, the photoluminescence properties of ZnO nanostructures were studied, and it was revealed that the photoluminescence spectrum features two strong ultraviolet bands at about 378 and 399 nm and a series of weak blue bands within a range of 440–484 nm, related to the emissions of free excitons, near-band edge, and defects of ZnO nanostructures. The obtained results enrich our knowledge on the synthesis of ZnO-based nanostructures and contribute to the development of ZnO-based optoelectronic devices.

  14. Catalyst-free growth and tailoring morphology of zinc oxide nanostructures by plasma-enhanced deposition at low temperature

    International Nuclear Information System (INIS)

    Chen, W. Z.; Wang, B. B.; Qu, Y. Z.; Huang, X.; Ostrikov, K.; Levchenko, I.; Xu, S.; Cheng, Q. J.

    2017-01-01

    ZnO nanostructures were grown under different deposition conditions from Zn films pre-deposited onto Si substrates in O 2 -Ar plasma, ignited in an advanced custom-designed plasma-enhanced horizontal tube furnace deposition system. The morphology and structure of the synthesized ZnO nanostructures were systematically and extensively investigated by scanning and transmission electron microscopy, Raman spectroscopy, and atomic force microscopy. It is shown that the morphology of ZnO nanostructures changes from the hybrid ZnO/nanoparticle and nanorod system to the mixture of ZnO nanosheets and nanorods when the growth temperature increases, and the density of ZnO nanorods increases with the increase of oxygen flow rate. The formation of ZnO nanostructures was explained in terms of motion of Zn atoms on the Zn nanoparticle surfaces, and to the local melting of Zn nanoparticles or nanosheets. Moreover, the photoluminescence properties of ZnO nanostructures were studied, and it was revealed that the photoluminescence spectrum features two strong ultraviolet bands at about 378 and 399 nm and a series of weak blue bands within a range of 440–484 nm, related to the emissions of free excitons, near-band edge, and defects of ZnO nanostructures. The obtained results enrich our knowledge on the synthesis of ZnO-based nanostructures and contribute to the development of ZnO-based optoelectronic devices.

  15. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Provine, J., E-mail: jprovine@stanford.edu; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Kim, Ki-Hyun [Manufacturing Technology Center, Samsung Electronics, Suwon, Gyeonggi-Do (Korea, Republic of); Prinz, Fritz B. [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

    2016-06-15

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiN{sub x}), particularly for use a low k dielectric spacer. One of the key material properties needed for SiN{sub x} films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiN{sub x} and evaluate the film’s WER in 100:1 dilutions of HF in H{sub 2}O. The remote plasma capability available in PEALD, enabled controlling the density of the SiN{sub x} film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiN{sub x} of 6.1 Å/min, which is similar to WER of SiN{sub x} from LPCVD reactions at 850 °C.

  16. Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

    Energy Technology Data Exchange (ETDEWEB)

    Suh, Sungin; Kim, Jun-Rae; Kim, Seongkyung; Hwang, Cheol Seong; Kim, Hyeong Joon, E-mail: thinfilm@snu.ac.kr [Department of Materials Science and Engineering with Inter-University Semiconductor Research Center (ISRC), Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 08826 (Korea, Republic of); Ryu, Seung Wook, E-mail: tazryu78@gmail.com [Department of Electrical Engineering, Stanford University, Stanford, California 94305-2311 (United States); Cho, Seongjae [Department of Electronic Engineering and New Technology Component & Material Research Center (NCMRC), Gachon University, Seongnam-si, Gyeonggi-do 13120 (Korea, Republic of)

    2016-01-15

    It has not been an easy task to deposit SiN at low temperature by conventional plasma-enhanced atomic layer deposition (PE-ALD) since Si organic precursors generally have high activation energy for adsorption of the Si atoms on the Si-N networks. In this work, in order to achieve successful deposition of SiN film at low temperature, the plasma processing steps in the PE-ALD have been modified for easier activation of Si precursors. In this modification, the efficiency of chemisorption of Si precursor has been improved by additional plasma steps after purging of the Si precursor. As the result, the SiN films prepared by the modified PE-ALD processes demonstrated higher purity of Si and N atoms with unwanted impurities such as C and O having below 10 at. % and Si-rich films could be formed consequently. Also, a very high step coverage ratio of 97% was obtained. Furthermore, the process-optimized SiN film showed a permissible charge-trapping capability with a wide memory window of 3.1 V when a capacitor structure was fabricated and measured with an insertion of the SiN film as the charge-trap layer. The modified PE-ALD process using the activated Si precursor would be one of the most practical and promising solutions for SiN deposition with lower thermal budget and higher cost-effectiveness.

  17. Fabrication of TiO_2-modified polytetrafluoroethylene ultrafiltration membranes via plasma-enhanced surface graft pretreatment

    International Nuclear Information System (INIS)

    Qian, Yingjia; Chi, Lina; Zhou, Weili; Yu, Zhenjiang; Zhang, Zhongzhi; Zhang, Zhenjia; Jiang, Zheng

    2016-01-01

    Graphical abstract: - Highlights: • Multifunctional TiO_2/PAA/PTFE ultrafiltration membrane was fabricated via tight coating of TiO_2 functional layer onto the plasma-assisted graft of PAA on PTFE. • The high water flux rate, remarkable enhanced ultrafiltration performance and excellent self-cleaning ability were demonstrated. • The formation of COO−Ti bidentate coordination between TiO_2 and PAA was responsible for the successful coating. - Abstract: Surface hydrophilic modification of polymer ultrafiltration membrane using metal oxide represents an effective yet highly challenging solution to improve water flux and antifouling performance. Via plasma-enhanced graft of poly acryl acid (PAA) prior to coating TiO_2, we successfully fixed TiO_2 functional thin layer on super hydrophobic polytetrafluoroethylene (PTFE) ultrafiltration (UF) membranes. The characterization results evidenced TiO_2 attached on the PTFE-based UF membranes through the chelating bidentate coordination between surface-grafted carboxyl group and Ti"4"+. The TiO_2 surface modification may greatly reduce the water contact angle from 115.8° of the PTFE membrane to 35.0° without degradation in 30-day continuous filtration operations. The novel TiO_2/PAA/PTFE membranes also exhibited excellent antifouling and self-cleaning performance due to the intrinsic hydrophilicity and photocatalysis properties of TiO_2, which was further confirmed by the photo-degradation of MB under Xe lamp irradiation.

  18. Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor

    International Nuclear Information System (INIS)

    Jeon, Ki-Moon; Shin, Jae-Su; Yun, Ju-Young; Jun Lee, Sang; Kang, Sang-Woo

    2014-01-01

    The plasma-enhanced atomic layer deposition (PEALD) process was developed as a growth technique of SiO 2 thin films using a plasma-activated triisopropylsilane [TIPS, ((iPr) 3 SiH)] precursor. TIPS was activated by an argon plasma at the precursor injection stage of the process. Using the activated TIPS, it was possible to control the growth rate per cycle of the deposited films by adjusting the plasma ignition time. The PEALD technique allowed deposition of SiO 2 films at temperatures as low as 50 °C without carbon impurities. In addition, films obtained with plasma ignition times of 3 s and 10 s had similar values of root-mean-square surface roughness. In order to evaluate the suitability of TIPS as a precursor for low-temperature deposition of SiO 2 films, the vapor pressure of TIPS was measured. The thermal stability and the reactivity of the gas-phase TIPS with respect to water vapor were also investigated by analyzing the intensity changes of the C–H and Si–H peaks in the Fourier-transform infrared spectrum of TIPS

  19. Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO{sub 2}/TiN stacks

    Energy Technology Data Exchange (ETDEWEB)

    Chernikova, A. G.; Kuzmichev, D. S.; Negrov, D. V.; Kozodaev, M. G.; Markeev, A. M. [Moscow Institute of Physics and Technology, Institutskii per. 9, 141700 Dolgoprudny, Moscow Region (Russian Federation); Polyakov, S. N. [Technological Institute for Superhard and Novel Carbon Materials, Tsentral' naya Str. 7a, 142190 Troitsk, Moscow (Russian Federation)

    2016-06-13

    We report the possibility of employment of low temperature (≤330 °C) plasma-enhanced atomic layer deposition for the formation of both electrodes and hafnium-oxide based ferroelectric in the metal-insulator-metal structures. The structural and ferroelectric properties of La doped HfO{sub 2}-based layers and its evolution with the change of both La content (2.1, 3.7 and 5.8 at. %) and the temperature of the rapid thermal processing (550–750 °C) were investigated in detail. Ferroelectric properties emerged only for 2.1 and 3.7 at. % of La due to the structural changes caused by the given doping levels. Ferroelectric properties were also found to depend strongly on annealing temperature, with the most robust ferroelectric response for lowest La concentration and intermediate 650 °C annealing temperature. The long term wake-up effect and such promising endurance characteristics as 3 × 10{sup 8} switches by bipolar voltage cycles with 30 μs duration and ± 3 MV/cm amplitude without any decrease of remnant polarization value were demonstrated.

  20. Fabrication of TiO2-modified polytetrafluoroethylene ultrafiltration membranes via plasma-enhanced surface graft pretreatment

    Science.gov (United States)

    Qian, Yingjia; Chi, Lina; Zhou, Weili; Yu, Zhenjiang; Zhang, Zhongzhi; Zhang, Zhenjia; Jiang, Zheng

    2016-01-01

    Surface hydrophilic modification of polymer ultrafiltration membrane using metal oxide represents an effective yet highly challenging solution to improve water flux and antifouling performance. Via plasma-enhanced graft of poly acryl acid (PAA) prior to coating TiO2, we successfully fixed TiO2 functional thin layer on super hydrophobic polytetrafluoroethylene (PTFE) ultrafiltration (UF) membranes. The characterization results evidenced TiO2 attached on the PTFE-based UF membranes through the chelating bidentate coordination between surface-grafted carboxyl group and Ti4+. The TiO2 surface modification may greatly reduce the water contact angle from 115.8° of the PTFE membrane to 35.0° without degradation in 30-day continuous filtration operations. The novel TiO2/PAA/PTFE membranes also exhibited excellent antifouling and self-cleaning performance due to the intrinsic hydrophilicity and photocatalysis properties of TiO2, which was further confirmed by the photo-degradation of MB under Xe lamp irradiation.

  1. Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films

    Directory of Open Access Journals (Sweden)

    Jörg Haeberle

    2013-11-01

    Full Text Available We report on results on the preparation of thin (2O3 films on silicon substrates using thermal atomic layer deposition (T-ALD and plasma enhanced atomic layer deposition (PE-ALD in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt and 200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate over 4” wafers and correlate them to X-ray photoelectron spectroscopy (XPS results. The 200 °C T-ALD and PE-ALD processes yield films with similar refractive indices and with oxygen to aluminum elemental ratios very close to the stoichiometric value of 1.5. However, in both also fragments of the precursor are integrated into the film. The PE-ALD films show an increased growth rate and lower carbon contaminations. Reducing the deposition temperature down to rt leads to a higher content of carbon and CH-species. We also find a decrease of the refractive index and of the oxygen to aluminum elemental ratio as well as an increase of the growth rate whereas the homogeneity of the film growth is not influenced significantly. Initial state energy shifts in all PE-ALD samples are observed which we attribute to a net negative charge within the films.

  2. Variable Power, Short Microwave Pulses Generation using a CW Magnetron

    Directory of Open Access Journals (Sweden)

    CIUPA, R.

    2011-05-01

    Full Text Available Fine control of microwave power radiation in medical and scientific applications is a challenging task. Since a commercial Continuous Wave (CW magnetron is the most inexpensive microwave device available today on the market, it becomes the best candidate for a microwave power generator used in medical diathermy and hyperthermia treatments or high efficiency chemical reactions using microwave reactors as well. This article presents a new method for driving a CW magnetron with short pulses, using a modified commercial Zero Voltage Switching (ZVS inverter, software driven by a custom embedded system. The microwave power generator designed with this method can be programmed for output microwave pulses down to 1% of the magnetron's power and allows microwave low frequency pulse modulation in the range of human brain electrical activity, intended for medical applications. Microwave output power continuous control is also possible with the magnetron running in the oscillating area, using a dual frequency Pulse Width Modulation (PWM, where the low frequency PWM pulse is modulating a higher resonant frequency required by the ZVS inverter's transformer. The method presented allows a continuous control of both power and energy (duty-cycle at the inverter's output.

  3. Microwave photonics shines

    Science.gov (United States)

    Won, Rachel

    2011-12-01

    The combination of microwave photonics and optics has advanced many applications in defence, wireless communications, imaging and network infrastructure. Rachel Won talks to Jianping Yao from the University of Ottawa in Canada about the importance of this growing field.

  4. Cosmic microwave background radiation

    International Nuclear Information System (INIS)

    Wilson, R.W.

    1979-01-01

    The 20-ft horn-reflector antenna at Bell Laboratories is discussed in detail with emphasis on the 7.35 cm radiometer. The circumstances leading to the detection of the cosmic microwave background radiation are explored

  5. Novel Cyclosilazane-Type Silicon Precursor and Two-Step Plasma for Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride.

    Science.gov (United States)

    Park, Jae-Min; Jang, Se Jin; Lee, Sang-Ick; Lee, Won-Jun

    2018-03-14

    We designed cyclosilazane-type silicon precursors and proposed a three-step plasma-enhanced atomic layer deposition (PEALD) process to prepare silicon nitride films with high quality and excellent step coverage. The cyclosilazane-type precursor, 1,3-di-isopropylamino-2,4-dimethylcyclosilazane (CSN-2), has a closed ring structure for good thermal stability and high reactivity. CSN-2 showed thermal stability up to 450 °C and a sufficient vapor pressure of 4 Torr at 60 °C. The energy for the chemisorption of CSN-2 on the undercoordinated silicon nitride surface as calculated by density functional theory method was -7.38 eV. The PEALD process window was between 200 and 500 °C, with a growth rate of 0.43 Å/cycle. The best film quality was obtained at 500 °C, with hydrogen impurity of ∼7 atom %, oxygen impurity less than 2 atom %, low wet etching rate, and excellent step coverage of ∼95%. At 300 °C and lower temperatures, the wet etching rate was high especially at the lower sidewall of the trench pattern. We introduced the three-step PEALD process to improve the film quality and the step coverage on the lower sidewall. The sequence of the three-step PEALD process consists of the CSN-2 feeding step, the NH 3 /N 2 plasma step, and the N 2 plasma step. The H radicals in NH 3 /N 2 plasma efficiently remove the ligands from the precursor, and the N 2 plasma after the NH 3 plasma removes the surface hydrogen atoms to activate the adsorption of the precursor. The films deposited at 300 °C using the novel precursor and the three-step PEALD process showed a significantly improved step coverage of ∼95% and an excellent wet etching resistance at the lower sidewall, which is only twice as high as that of the blanket film prepared by low-pressure chemical vapor deposition.

  6. Industrialization of hot wire chemical vapor deposition for thin film applications

    NARCIS (Netherlands)

    Schropp, Ruud

    2015-01-01

    The consequences of implementing a Hot Wire Chemical Vapor Deposition (HWCVD) chamber into an existing in-line or roll-to-roll reactor are described. The hardware and operation of the HWCVD production reactor is compared to that of existing roll-to-roll reactors based on Plasma Enhanced Chemical

  7. Chemical modeling of a high-density inductively-coupled plasma reactor containing silane

    NARCIS (Netherlands)

    Kovalgin, Alexeij Y.; Boogaard, A.; Brunets, I.; Holleman, J.; Schmitz, Jurriaan

    We carried out the modeling of chemical reactions in a silane-containing remote Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPECVD) system, intended for deposition of silicon, silicon oxide, and silicon nitride layers. The required electron densities and Electron Energy

  8. Integrated Microwave Photonics

    OpenAIRE

    Marpaung, David; Roeloffzen, Chris; Heideman, René; Leinse, Arne; Sales Maicas, Salvador; Capmany Francoy, José

    2013-01-01

    Microwave photonics (MWP) is an emerging field in which radio frequency (RF) signals are generated, distributed, processed and analyzed using the strength of photonic techniques. It is a technology that enables various functionalities which are not feasible to achieve only in the microwave domain. A particular aspect that recently gains significant interests is the use of photonic integrated circuit (PIC) technology in the MWP field for enhanced functionalities and robustness as well as the r...

  9. Microwave system engineering principles

    CERN Document Server

    Raff, Samuel J

    1977-01-01

    Microwave System Engineering Principles focuses on the calculus, differential equations, and transforms of microwave systems. This book discusses the basic nature and principles that can be derived from thermal noise; statistical concepts and binomial distribution; incoherent signal processing; basic properties of antennas; and beam widths and useful approximations. The fundamentals of propagation; LaPlace's Equation and Transmission Line (TEM) waves; interfaces between homogeneous media; modulation, bandwidth, and noise; and communications satellites are also deliberated in this text. This bo

  10. Microwave and RF assisted chemical vapor infiltration

    Energy Technology Data Exchange (ETDEWEB)

    Devlin, D.J.; Barbero, R.S. [Los Alamos National Laboratory, NM (United States)

    1995-05-01

    Work during this reporting period has focused on the development of a CVI technique for rapid production of carbon/carbon and alumina composite systems. The focus of the alumina effort is towards porous materials for membrane supports and hot gas filtration. Industrial interest in these applications include companies such as: Dow, Westinghouse, Amoco and DuPont. Applications for the carbon materials are numerous and include: brakes, sporting goods, biomedical materials, flaps and seals for thrust control, after burner nozzles, turbine engine flaps and rotors. This effort will focus on aircraft brakes. A collaboration is underway with Hitco a major producer of carbon/carbon materials.

  11. The Effect of Microwave Radiation on Prickly Paddy Melon (Cucumis myriocarpus

    Directory of Open Access Journals (Sweden)

    Graham Brodie

    2012-01-01

    Full Text Available The growing list of herbicide-resistant biotypes and environmental concerns about chemical use has prompted interest in alternative methods of managing weeds. This study explored the effect of microwave energy on paddy melon (Cucumis myriocarpus plants, fruits, and seeds. Microwave treatment killed paddy melon plants and seeds. Stem rupture due to internal steam explosions often occurred after the first few seconds of microwave treatment when a small aperture antenna was used to apply the microwave energy. The half lethal microwave energy dose for plants was 145 J/cm2; however, a dose of at least 422 J/cm2 was needed to kill seeds. This study demonstrated that a strategic burst of intense microwave energy, focused onto the stem of the plant is as effective as applying microwave energy to the whole plant, but uses much less energy.

  12. Propagating Structure Of A Microwave Driven Shock wave Inside A Tube

    International Nuclear Information System (INIS)

    Shimada, Yutaka; Shibata, Teppei; Yamaguchi, Toshikazu; Komurasaki, Kimiya; Oda, Yasuhisa; Kajiwara, Ken; Takahashi, Koji; Kasugai, Atsushi; Sakamoto, Keishi; Arakawa, Yoshihiro

    2010-01-01

    The thrust generation process of a microwave rocket is similar to a pulse detonation engine, and understanding the interactions between microwave plasma and shock waves is important. Shadowgraph images of the microwave plasma generated in a tube under atmospheric air were taken. The observed plasma and shock wave were propagating one-dimensionally at constant velocity inside the tube. In order to understand the flow field inside the rocket, one-dimensional CFD analysis was conducted. With the change of microwave power density, the structure of the flow field was classified into two regimes: Microwave Supported Combustion (MSC), and Microwave Supported Detonation (MSD). The structure of the MSD was different from the structure of a chemical detonation, which implied the existence of a preheating in front of the shock wave. Furthermore, the flight performance was estimated by calculating the momentum coupling coefficient. It was confirmed that the efficiency was nearly constant in the MSD regime, with the increase of microwave power density.

  13. Optical emission spectrometric determination of arsenic and antimony by continuous flow chemical hydride generation and a miniaturized microwave microstrip argon plasma operated inside a capillary channel in a sapphire wafer

    International Nuclear Information System (INIS)

    Pohl, Pawel; Zapata, Israel Jimenez; Bings, Nicolas H.; Voges, Edgar; Broekaert, Jose A.C.

    2007-01-01

    Continuous flow chemical hydride generation coupled directly to a 40 W, atmospheric pressure, 2.45 GHz microwave microstrip Ar plasma operated inside a capillary channel in a sapphire wafer has been optimized for the emission spectrometric determination of As and Sb. The effect of the NaBH 4 concentration, the concentration of HCl, HNO 3 and H 2 SO 4 used for sample acidification, the Ar flow rate, the reagent flow rates, the liquid volume in the separator as well as the presence of interfering metals such as Fe, Cu, Ni, Co, Zn, Cd, Mn, Pb and Cr, was investigated in detail. A considerable influence of Fe(III) (enhancement of up to 50 %) for As(V) and of Fe(III), Cu(II) and Cr(III) (suppression of up to 75%) as well as of Cd(II) and Mn(II) (suppression by up to 25%) for Sb(III) was found to occur, which did not change by more than a factor of 2 in the concentration range of 2-20 μg ml -1 . The microstrip plasma tolerated the introduction of 4.2 ml min -1 of H 2 in the Ar working gas, which corresponded to an H 2 /Ar ratio of 28%. Under these conditions, the excitation temperature as measured with Ar atom lines and the electron number density as determined from the Stark broadening of the H β line was of the order of 5500 K and 1.50 . 10 14 cm -3 , respectively. Detection limits (3σ) of 18 ng ml -1 for As and 31 ng ml -1 for Sb were found and the calibration curves were linear over 2 orders of magnitude. With the procedure developed As and Sb could be determined at the 45 and 6.4 μg ml -1 level in a galvanic bath solution containing 2.5% of NiSO 4 . Additionally, As was determined in a coal fly ash reference material (NIST SRM 1633a) with a certified concentration of As of 145 ± 15 μg g -1 and a value of 144 ± 4 μg g -1 was found

  14. Comparing XPS on bare and capped ZrN films grown by plasma enhanced ALD: Effect of ambient oxidation

    Science.gov (United States)

    Muneshwar, Triratna; Cadien, Ken

    2018-03-01

    In this article we compare x-ray photoelectron spectroscopy (XPS) measurements on bare- and capped- zirconium nitride (ZrN) films to investigate the effect of ambient sample oxidation on the detected bound O in the form of oxide ZrO2 and/or oxynitride ZrOxNy. ZrN films in both bare- and Al2O3/AlN capped- XPS samples were grown by plasma-enhanced atomic layer deposition (PEALD) technique using tetrakis dimethylamino zirconium (TDMAZr) precursor, forming gas (5% H2, rest N2) inductively coupled plasma (ICP), and as received research grade process gases under identical process conditions. Capped samples were prepared by depositing 1 nm thick PEALD AlN on ZrN, followed by additional deposition of 1 nm thick ALD Al2O3, without venting of ALD reactor. On bare ZrN sample at room temperature, spectroscopic ellipsometry (SE) measurements with increasing ambient exposure times (texp) showed a self-limiting surface oxidation with the oxide thickness (dox) approaching 3.7 ± 0.02 nm for texp > 120 min. In XPS data measured prior to sample sputtering (tsput = 0), ZrO2 and ZrOxNy were detected in bare- samples, whereas only ZrN and Al2O3/AlN from capping layer were detected in capped- samples. For bare-ZrN samples, appearance of ZrO2 and ZrOxNy up to sputter depth (dsput) of 15 nm in depth-profile XPS data is in contradiction with measured dox = 3.7 nm, but explained from sputtering induced atomic inter-diffusion within analyzed sample. Appearance of artifacts in the XPS spectra from moderately sputtered (dsput = 0.2 nm and 0.4 nm) capped-ZrN sample, provides an evidence to ion-bombardment induced modifications within analyzed sample.

  15. Surface and grain boundary modifications of YBa2Cu3O7-δ ceramics by plasma-enhanced fluorination

    International Nuclear Information System (INIS)

    Magro, C.; Heintz, J.M.; Etourneau, J.; Tressaud, A.; Cardinaud, C.; Turban, G.; Hudakova, N.

    1994-01-01

    The radiofrequency plasma technique involving mixtures of CF 4 + O 2 gases has been applied to the treatment of high T c superconducting oxides (YBa 2 Cu 3 O 7-δ ). The investigation of the various experimental parameters of the process has shown that the improvement of the critical current density J c mainly depends on the inlet precursor composition CF 4 + τ % O 2 , on the total pressure, and on the reaction time. The presence of fluorine in the bulk of the ceramics has been observed from electron microprobe analysis, together with an increase of the open-quotes Cu 3+ close quotes content. The plasma enhanced fluorination (PEF) treatment improves the superconducting properties of the materials: both values of the resistivity in the normal state and of the superconducting transition width are reduced and the critical transition temperature is improved of about 1 K. Mechanisms of interaction between the reactive species of the plasma and YBa 2 Cu 3 O 7-δ ceramics have been proposed through detailed angle resolved X-ray photoelectron spectroscopic analyses. At the surface of the outer grains, the plasma treatment removes (OH) - and (CO 3 ) 2- species contained in the degradation layer and gives rise to a fluoride-rich layer. In the bulk of the material the occurrence of metal-fluorine bonds in the superconducting phase has to be assumed. Moreover, interactions between atomic fluorine and grain boundaries result in an improvement of intergranular magnetic behavior, according to a.c. susceptibility measurements. An increase of the oxidation state of copper has also been detected, confirming the oxidizing effect of the plasma treatment

  16. Fabrication of TiO{sub 2}-modified polytetrafluoroethylene ultrafiltration membranes via plasma-enhanced surface graft pretreatment

    Energy Technology Data Exchange (ETDEWEB)

    Qian, Yingjia [School of Environmental Science and Engineering, Shanghai Jiaotong University, Shanghai 200240 (China); Chi, Lina, E-mail: lnchi@sjtu.edu.cn [School of Environmental Science and Engineering, Shanghai Jiaotong University, Shanghai 200240 (China); Faculty of Engineering and the Environment, University of Southampton, Southampton SO17 1BJ (United Kingdom); Zhou, Weili; Yu, Zhenjiang [School of Environmental Science and Engineering, Shanghai Jiaotong University, Shanghai 200240 (China); Zhang, Zhongzhi [College of Chemical Engineering, China University of Petroleum, Beijing 102249 (China); Zhang, Zhenjia [School of Environmental Science and Engineering, Shanghai Jiaotong University, Shanghai 200240 (China); Jiang, Zheng, E-mail: z.jiang@soton.ac.uk [Faculty of Engineering and the Environment, University of Southampton, Southampton SO17 1BJ (United Kingdom)

    2016-01-01

    Graphical abstract: - Highlights: • Multifunctional TiO{sub 2}/PAA/PTFE ultrafiltration membrane was fabricated via tight coating of TiO{sub 2} functional layer onto the plasma-assisted graft of PAA on PTFE. • The high water flux rate, remarkable enhanced ultrafiltration performance and excellent self-cleaning ability were demonstrated. • The formation of COO−Ti bidentate coordination between TiO{sub 2} and PAA was responsible for the successful coating. - Abstract: Surface hydrophilic modification of polymer ultrafiltration membrane using metal oxide represents an effective yet highly challenging solution to improve water flux and antifouling performance. Via plasma-enhanced graft of poly acryl acid (PAA) prior to coating TiO{sub 2}, we successfully fixed TiO{sub 2} functional thin layer on super hydrophobic polytetrafluoroethylene (PTFE) ultrafiltration (UF) membranes. The characterization results evidenced TiO{sub 2} attached on the PTFE-based UF membranes through the chelating bidentate coordination between surface-grafted carboxyl group and Ti{sup 4+}. The TiO{sub 2} surface modification may greatly reduce the water contact angle from 115.8° of the PTFE membrane to 35.0° without degradation in 30-day continuous filtration operations. The novel TiO{sub 2}/PAA/PTFE membranes also exhibited excellent antifouling and self-cleaning performance due to the intrinsic hydrophilicity and photocatalysis properties of TiO{sub 2}, which was further confirmed by the photo-degradation of MB under Xe lamp irradiation.

  17. Design of a microwave calorimeter for the microwave tokamak experiment

    International Nuclear Information System (INIS)

    Marinak, M.

    1988-01-01

    The initial design of a microwave calorimeter for the Microwave Tokamak Experiment is presented. The design is optimized to measure the refraction and absorption of millimeter rf microwaves as they traverse the toroidal plasma of the Alcator C tokamak. Techniques utilized can be adapted for use in measuring high intensity pulsed output from a microwave device in an environment of ultra high vacuum, intense fields of ionizing and non-ionizing radiation and intense magnetic fields. 16 refs

  18. Effect of microwave irradiation on selective heating behavior and magnetic separation characteristics of Panzhihua ilmenite

    International Nuclear Information System (INIS)

    Zhao, Wei; Chen, Jin; Chang, Xiaodong; Guo, Shenghui; Srinivasakannan, C.; Chen, Guo; Peng, Jinhui

    2014-01-01

    Highlights: • Microwave irradiation can be applied effectively and efficiently to the irradiation processes of Panzhihua ilmenite. • The mineral processing properties of microwave treated ilmenite were generally as good as or better than that of initial ilmenite. • The microwave selective heating characteristics of the different minerals and compounds, and the thermal stresses were caused by the uniform heat rate disturbed under microwave irradiation. - Abstract: The influences of microwave irradiation on the surface characteristics of Panzhihua ilmenite were systematically investigated. The crystal structures, surface morphology and surface chemical functional groups of ilmenite were characterized before and after microwave irradiation and magnetic separation for different microwave treatment times by using various methods, such as XRD, SEM, and FT-IR, respectively. XRD analysis showed that the microwave treated ilmenite has the strongest peaks of phase more than that of raw samples, indicates that the crystalline compound of ilmenite increased with the microwave irradiation time. SEM analysis showed the micro-cracking appeared at many grain boundaries of ilmenite after being pretreated by microwave treatment. The separations of ilmenite from gangue minerals were completed and the micro-fissure within ilmenite minerals were also formed, which could be attributed to the microwave selective heating characteristics of the different minerals and compounds, and the thermal stresses were caused by the uniform heat rate disturbed under microwave irradiation. The mineral processing results showed that the magnetic separation characteristics and properties of microwave treated ilmenite samples were better than that of microwave untreated ilmenite samples. It was concluded that microwave irradiation can be applied effectively and efficiently to the irradiation processes of Panzhihua ilmenite

  19. Microwave engineering concepts and fundamentals

    CERN Document Server

    Khan, Ahmad Shahid

    2014-01-01

    Detailing the active and passive aspects of microwaves, Microwave Engineering: Concepts and Fundamentals covers everything from wave propagation to reflection and refraction, guided waves, and transmission lines, providing a comprehensive understanding of the underlying principles at the core of microwave engineering. This encyclopedic text not only encompasses nearly all facets of microwave engineering, but also gives all topics—including microwave generation, measurement, and processing—equal emphasis. Packed with illustrations to aid in comprehension, the book: •Describes the mathematical theory of waveguides and ferrite devices, devoting an entire chapter to the Smith chart and its applications •Discusses different types of microwave components, antennas, tubes, transistors, diodes, and parametric devices •Examines various attributes of cavity resonators, semiconductor and RF/microwave devices, and microwave integrated circuits •Addresses scattering parameters and their properties, as well a...

  20. Parameter prediction for microwave garnets

    International Nuclear Information System (INIS)

    Ramer, R.

    1996-01-01

    Full text: Linearity of the microwave parameters (resonance linewidth ΔH and effective linewidth ΔH eff ) is demonstrated and their use in the Computer-aided design (CAD)/Computer-aided manufacturing (CAM) of new microwave garnets is proposed. Such an approach would combine a numerical database of microwave data and several computational programs. The model is an applied formulation of the analysis of a wide range of microwave garnets

  1. Microwave Tokamak Experiment

    International Nuclear Information System (INIS)

    Anon.

    1988-01-01

    The Microwave Tokamak Experiment, now under construction at the Laboratory, will use microwave heating from a free-electron laser. The intense microwave pulses will be injected into the tokamak to realize several goals, including a demonstration of the effects of localized heat deposition within magnetically confined plasma, a better understanding of energy confinement in tokamaks, and use of the new free-electron laser technology for plasma heating. The experiment, soon to be operational, provides an opportunity to study dense plasmas heated by powers unprecedented in the electron-cyclotron frequency range required by the especially high magnetic fields used with the MTX and needed for reactors. 1 references, 5 figures, 3 tables

  2. Balanced microwave filters

    CERN Document Server

    Hong, Jiasheng; Medina, Francisco; Martiacuten, Ferran

    2018-01-01

    This book presents and discusses strategies for the design and implementation of common-mode suppressed balanced microwave filters, including, narrowband, wideband, and ultra-wideband filters This book examines differential-mode, or balanced, microwave filters by discussing several implementations of practical realizations of these passive components. Topics covered include selective mode suppression, designs based on distributed and semi-lumped approaches, multilayer technologies, defect ground structures, coupled resonators, metamaterials, interference techniques, and substrate integrated waveguides, among others. Divided into five parts, Balanced Microwave Filters begins with an introduction that presents the fundamentals of balanced lines, circuits, and networks. Part 2 covers balanced transmission lines with common-mode noise suppression, including several types of common-mode filters and the application of such filters to enhance common-mode suppression in balanced bandpass filters. Next, Part 3 exa...

  3. High power microwaves

    CERN Document Server

    Benford, James; Schamiloglu, Edl

    2016-01-01

    Following in the footsteps of its popular predecessors, High Power Microwaves, Third Edition continues to provide a wide-angle, integrated view of the field of high power microwaves (HPMs). This third edition includes significant updates in every chapter as well as a new chapter on beamless systems that covers nonlinear transmission lines. Written by an experimentalist, a theorist, and an applied theorist, respectively, the book offers complementary perspectives on different source types. The authors address: * How HPM relates historically and technically to the conventional microwave field * The possible applications for HPM and the key criteria that HPM devices have to meet in order to be applied * How high power sources work, including their performance capabilities and limitations * The broad fundamental issues to be addressed in the future for a wide variety of source types The book is accessible to several audiences. Researchers currently in the field can widen their understanding of HPM. Present or pot...

  4. The microwave heating mechanism of N-(4-methoxybenzyliden)-4-butylaniline in liquid crystalline and isotropic phases as determined using in situ microwave irradiation NMR spectroscopy.

    Science.gov (United States)

    Tasei, Yugo; Tanigawa, Fumikazu; Kawamura, Izuru; Fujito, Teruaki; Sato, Motoyasu; Naito, Akira

    2015-04-14

    Microwave heating effects are widely used in the acceleration of organic, polymerization and enzymatic reactions. These effects are primarily caused by the local heating induced by microwave irradiation. However, the detailed molecular mechanisms associated with microwave heating effects on the chemical reactions are not yet well understood. This study investigated the microwave heating effect of N-(4-methoxybenzylidene)-4-butylaniline (MBBA) in liquid crystalline and isotropic phases using in situ microwave irradiation nuclear magnetic resonance (NMR) spectroscopy, by obtaining (1)H NMR spectra of MBBA under microwave irradiation. When heated simply using the temperature control unit of the NMR instrument, the liquid crystalline MBBA was converted to the isotropic phase exactly at its phase transition temperature (Tc) of 41 °C. The application of microwave irradiation at 130 W for 90 s while maintaining the instrument temperature at 20 °C generated a small amount of isotropic phase within the bulk liquid crystal. The sample temperature of the liquid crystalline state obtained during microwave irradiation was estimated to be 35 °C by assessing the linewidths of the (1)H NMR spectrum. This partial transition to the isotropic phase can be attributed to a non-equilibrium local heating state induced by the microwave irradiation. The application of microwave at 195 W for 5 min to isotropic MBBA while maintaining an instrument temperature of 50 °C raised the sample temperature to 160 °C. In this study, the MBBA temperature during microwave irradiation was estimated by measuring the temperature dependent chemical shifts of individual protons in the sample, and the different protons were found to indicate significantly different temperatures in the molecule. These results suggest that microwave heating polarizes bonds in polar functional groups, and this effect may partly explain the attendant acceleration of organic reactions.

  5. Microwave Assisted Drug Delivery

    DEFF Research Database (Denmark)

    Jónasson, Sævar Þór; Zhurbenko, Vitaliy; Johansen, Tom Keinicke

    2014-01-01

    In this work, the microwave radiation is adopted for remote activation of pharmaceutical drug capsules inside the human body in order to release drugs at a pre-determined time and location. An array of controllable transmitting sources is used to produce a constructive interference at a certain...... focus point inside the body, where the drugs are then released from the specially designed capsules. An experimental setup for microwave activation has been developed and tested on a body phantom that emulates the human torso. A design of sensitive receiving structures for integration with a drug...

  6. Compact microwave ion source

    International Nuclear Information System (INIS)

    Leung, K.N.; Walther, S.; Owren, H.W.

    1985-05-01

    A small microwave ion source has been fabricated from a quartz tube with one end enclosed by a two grid accelerator. The source is also enclosed by a cavity operated at a frequency of 2.45 GHz. Microwave power as high as 500 W can be coupled to the source plasma. The source has been operated with and without multicusp fields for different gases. In the case of hydrogen, ion current density of 200 mA/cm -2 with atomic ion species concentration as high as 80% has been extracted from the source

  7. EDITORIAL: Microwave Moisture Measurements

    Science.gov (United States)

    Kaatze, Udo; Kupfer, Klaus; Hübner, Christof

    2007-04-01

    Microwave moisture measurements refer to a methodology by which the water content of materials is non-invasively determined using electromagnetic fields of radio and microwave frequencies. Being the omnipresent liquid on our planet, water occurs as a component in most materials and often exercises a significant influence on their properties. Precise measurements of the water content are thus extremely useful in pure sciences, particularly in biochemistry and biophysics. They are likewise important in many agricultural, technical and industrial fields. Applications are broad and diverse, and include the quality assessment of foodstuffs, the determination of water content in paper, cardboard and textile production, the monitoring of moisture in sands, gravels, soils and constructions, as well as the measurement of water admixtures to coal and crude oil in reservoirs and in pipelines. Microwave moisture measurements and evaluations require insights in various disciplines, such as materials science, dielectrics, the physical chemistry of water, electrodynamics and microwave techniques. The cooperation of experts from the different fields of science is thus necessary for the efficient development of this complex discipline. In order to advance cooperation the Workshop on Electromagnetic Wave Interaction with Water and Moist Substances was held in 1993 in Atlanta. It initiated a series of international conferences, of which the last one was held in 2005 in Weimar. The meeting brought together 130 scientists and engineers from all over the world. This special issue presents a collection of some selected papers that were given at the event. The papers cover most topics of the conference, featuring dielectric properties of aqueous materials, electromagnetic wave interactions, measurement methods and sensors, and various applications. The special issue is dedicated to Dr Andrzej W Kraszewski, who died in July 2006 after a distinguished career of 48 years in the research of

  8. Microwave circulator design

    CERN Document Server

    Linkhart, Douglas K

    2014-01-01

    Circulator design has advanced significantly since the first edition of this book was published 25 years ago. The objective of this second edition is to present theory, information, and design procedures that will enable microwave engineers and technicians to design and build circulators successfully. This resource contains a discussion of the various units used in the circulator design computations, as well as covers the theory of operation. This book presents numerous applications, giving microwave engineers new ideas about how to solve problems using circulators. Design examples are provided, which demonstrate how to apply the information to real-world design tasks.

  9. A Comparative Study of Three Different Chemical Vapor Deposition Techniques of Carbon Nanotube Growth on Diamond Films

    Directory of Open Access Journals (Sweden)

    Betty T. Quinton

    2013-01-01

    Full Text Available This paper compares between the methods of growing carbon nanotubes (CNTs on diamond substrates and evaluates the quality of the CNTs and the interfacial strength. One potential application for these materials is a heat sink/spreader for high-power electronic devices. The CNTs and diamond substrates have a significantly higher specific thermal conductivity than traditional heat sink/spreader materials making them good replacement candidates. Only limited research has been performed on these CNT/diamond structures and their suitability of different growth methods. This study investigates three potential chemical vapor deposition (CVD techniques for growing CNTs on diamond: thermal CVD (T-CVD, microwave plasma-enhanced CVD (MPE-CVD, and floating catalyst thermal CVD (FCT-CVD. Scanning electron microscopy (SEM and high-resolution transmission electron microscopy (TEM were used to analyze the morphology and topology of the CNTs. Raman spectroscopy was used to assess the quality of the CNTs by determining the ID/IG peak intensity ratios. Additionally, the CNT/diamond samples were sonicated for qualitative comparisons of the durability of the CNT forests. T-CVD provided the largest diameter tubes, with catalysts residing mainly at the CNT/diamond interface. The MPE-CVD process yielded non uniform defective CNTs, and FCT-CVD resulted in the smallest diameter CNTs with catalyst particles imbedded throughout the length of the nanotubes.

  10. Process characteristics for microwave assisted hydrothermal carbonization of cellulose.

    Science.gov (United States)

    Zhang, Junting; An, Ying; Borrion, Aiduan; He, Wenzhi; Wang, Nan; Chen, Yirong; Li, Guangming

    2018-07-01

    The process characteristics of microwave assisted hydrothermal carbonization of cellulose was investigated and a first order kinetics model based on carbon concentration was developed. Chemical properties analysis showed that comparing to conventional hydrothermal carbonization, hydrochar with comparable energy properties can be obtained with 5-10 times decrease in reaction time with assistance of microwave heating. Results from kinetics study was in great agreement with experimental analysis, that they both illustrated the predominant mechanism of the reaction depend on variations in the reaction rates of two co-existent pathways. Particularly, the pyrolysis-like intramolecular dehydration reaction was proved to be the predominant mechanism for hydrochar generation under high temperatures. Finally, the enhancement effects of microwave heating were reflected under both soluble and solid pathways in this research, suggesting microwave-assisted hydrothermal carbonization as a more attracting method for carbon-enriched hydrochar recovery. Copyright © 2018 Elsevier Ltd. All rights reserved.

  11. RESEARCH OF MICROWAVE'S INFLUENCE ON QUALITY OF DELICIOUS PRODUCTS FROM BEEF

    Directory of Open Access Journals (Sweden)

    T. Kozlova

    2012-03-01

    Full Text Available Influence of time of microwave fluctuations on organoleptic indicators, chemical composition, exit and periods of storage of a meat product is investigated. It is established that the use of microwave technology in the beef delicacy reduces the salting by 3 times, and baking by 1,2 times. The yield of finished products increased by 2 times.

  12. XPS and FTIR spectroscopic study on microwave treated high phosphorus iron ore

    Energy Technology Data Exchange (ETDEWEB)

    Omran, Mamdouh, E-mail: mamdouh.omran@oulu.fi [Process Metallurgy Research Group, Faculty of Technology, University of Oulu (Finland); Mineral Processing and Agglomeration Lab, Central Metallurgical Research and Development Institute, Cairo (Egypt); Fabritius, Timo [Process Metallurgy Research Group, Faculty of Technology, University of Oulu (Finland); Elmahdy, Ahmed M.; Abdel-Khalek, Nagui A. [Mineral Processing and Agglomeration Lab, Central Metallurgical Research and Development Institute, Cairo (Egypt); El-Aref, Mortada; Elmanawi, Abd El-Hamid [Geology Department, Faculty of Science, Cairo University, Giza 12613 (Egypt)

    2015-08-01

    Highlights: • The effect of microwave radiation on structure and chemical state of high phosphorus iron ore was studied. • FTIR analyses showed that after microwave radiation the functional chemical groups of phosphorus bearing minerals (fluorapatite) dissociated. • High resolution XPS analyses of Fe 2p peaks showed that after microwave radiation a portion of Fe(+III) was reduced to Fe(+II). • Microwave radiation had a positive effect on the magnetic properties of iron oxide, through formation of ferromagnetic phases. - Abstract: A growing interest in microwave heating has emerged recently. Several potential microwave applications regarding minerals’ processing have been investigated. This paper investigates the effect of microwave radiation on Egyptian high phosphorus iron ore. Three different iron ore samples have varying Fe{sub 2}O{sub 3} and P{sub 2}O{sub 5} contents and mineralogical textures were studied. A comparative study has been carried out between untreated and microwave treated iron ore. XRD and FTIR analyses showed that after microwave radiation the crystallinity of iron bearing minerals (hematite) increased, while the functional chemical groups of phosphorus bearing minerals (fluorapatite) and other gangues dissociated. High resolution XPS analyses of Fe 2p peaks showed that after microwave radiation a portion of Fe(+III) was reduced to Fe(+II). This means that after microwave radiation iron oxide (hematite, Fe{sup 3+}) transformed into more magnetic phase. The results indicated that microwave radiation had a positive effect on the magnetic properties of iron oxide, through formation of ferromagnetic phases.

  13. Microwave stability at transition

    International Nuclear Information System (INIS)

    Holt, J.A.; Colestock, P.L.

    1995-05-01

    The question of microwave stability at transition is revisited using a Vlasov approach retaining higher order terms in the particle dynamics near the transition energy. A dispersion relation is derived which can be solved numerically for the complex frequency in terms of the longitudinal impedance and other beam parameters. Stability near transition is examined and compared with simulation results

  14. Commercial microwave space power

    International Nuclear Information System (INIS)

    Siambis, J.; Gregorwich, W.; Walmsley, S.; Shockey, K.; Chang, K.

    1991-01-01

    This paper reports on central commercial space power, generating power via large scale solar arrays, and distributing power to satellites via docking, tethering or beamed power such as microwave or laser beams, that is being investigated as a potentially advantageous alternative to present day technology where each satellite carries its own power generating capability. The cost, size and weight for electrical power service, together with overall mission requirements and flexibility are the principal selection criteria, with the case of standard solar array panels based on the satellite, as the reference point. This paper presents and investigates a current technology design point for beamed microwave commercial space power. The design point requires that 25 kW be delivered to the user load with 30% overall system efficiency. The key elements of the design point are: An efficient rectenna at the user end; a high gain, low beam width, efficient antenna at the central space power station end, a reliable and efficient cw microwave tube. Design trades to optimize the proposed near term design point and to explore characteristics of future systems were performed. Future development for making the beamed microwave space power approach more competitive against docking and tethering are discussed

  15. Leakage of Microwave Ovens

    Science.gov (United States)

    Abdul-Razzaq, W.; Bushey, R.; Winn, G.

    2011-01-01

    Physics is essential for students who want to succeed in science and engineering. Excitement and interest in the content matter contribute to enhancing this success. We have developed a laboratory experiment that takes advantage of microwave ovens to demonstrate important physical concepts and increase interest in physics. This experiment…

  16. Open microwave cavities

    Czech Academy of Sciences Publication Activity Database

    Šeba, Petr; Rotter, I.; Mueller, M.; Persson, C.; Pichugin, Konstantin N.

    2001-01-01

    Roč. 9, - (2001), s. 484-487 ISSN 1386-9477 Institutional research plan: CEZ:A02/98:Z1-010-914 Keywords : microwave cavity * resonances Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.009, year: 2001

  17. New applications of microwave

    International Nuclear Information System (INIS)

    Ejiri, A.; Tanaka, K.; Kawahata, K.; Ito, Y.; Tokuzawa, T.

    2000-01-01

    Interferometry and reflectometry measure phase of the transparent or the reflected wave to derive the information on plasma density. Homodyne reflectometry for an interlock and transmissiometry for sheet plasma measurements could be another class of microwave diagnostics, which does not measure the phase. (author)

  18. Hybrid Microwave Technology

    International Nuclear Information System (INIS)

    Wicks, G.G.

    2001-01-01

    A team associated with a Federal Laboratory, academia, and industry has been actively developing new microwave technology for treatment and remediation of a variety of potentially hazardous materials for almost a decade. This collaboration has resulted in unique equipment and processes with potential applicability to many fields, including disposition of electronic circuitry and components, medical wastes, radioactive materials and recycling of used tires

  19. Low temperature plasma-enhanced ALD TiN ultrathin films for Hf{sub 0.5}Zr{sub 0.5}O{sub 2}-based ferroelectric MIM structures

    Energy Technology Data Exchange (ETDEWEB)

    Kozodaev, M.G.; Chernikova, A.G.; Markeev, A.M. [Moscow Institute of Physics and Technology, Institutsky Lane 9, Dolgoprudny, Moscow Region 141700 (Russian Federation); Lebedinskii, Y.Y. [Moscow Institute of Physics and Technology, Institutsky Lane 9, Dolgoprudny, Moscow Region 141700 (Russian Federation); National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoye Shosse 31, 115409 Moscow (Russian Federation); Polyakov, S.N. [Technological Institute for Superhard and Novel Carbon Materials, Tsentral' naya str. 7a, 142190, Troitsk, Moscow (Russian Federation)

    2017-06-15

    In this work chemical and electrical properties of TiN films, grown by low temperature plasma-enhanced atomic layer deposition (PE-ALD) process from TiCl{sub 4} and NH{sub 3}, were investigated. Electrical resistivity as low as 250 μOhm x cm, as well as the lowest Cl impurity content, was achieved at 320 C. Full-ALD Hf{sub 0.5}Zr{sub 0.5}O{sub 2}-based metal-ferroelectric-metal capacitor with TiN electrodes was fabricated and its electrical properties were investigated. It was also shown that the proposed PE-ALD process provides an early film continuity, which was confirmed by ultrathin fully continuous film growth. Such ultrathin (3 nm) and fully continuous TiN film was also successfully implemented as the top electrode to Hf{sub 0.5}Zr{sub 0.5}O{sub 2}-based ferroelectric capacitor. Angle-resolved X-ray photoelectron spectroscopy (AR-XPS) was used for its thickness determination and a visible wake-up effect in underlying Hf{sub 0.5}Zr{sub 0.5}O{sub 2} layer was clearly observed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Microwave plasmas generated in bubbles immersed in liquids for hydrocarbons reforming

    International Nuclear Information System (INIS)

    Levko, Dmitry; Sharma, Ashish; Raja, Laxminarayan L

    2016-01-01

    We present a computational modeling study of microwave plasma generated in cluster of atmospheric-pressure argon bubbles immersed in a liquid. We demonstrate that the use of microwaves allows the generation of a dense chemically active non-equilibrium plasma along the gas–liquid interface. Also, microwaves allow generation of overdense plasma in all the bubbles considered in the cluster which is possible because the collisional skin depth of the wave exceeds the bubble dimension. These features of microwave plasma generation in bubbles immersed in liquids are highly desirable for the large-scale liquid hydrocarbon reforming technologies. (letter)

  1. Dynamic of ozone formation in nanosecond microwave discharges

    International Nuclear Information System (INIS)

    Akhmedzhanov, R.A.; Vikharev, A.L.; Gorbachev, A.M.

    1995-01-01

    Nanosecond gas discharges are efficient sources of chemically active plasma. Studies of the nanosecond microwave discharge are interesting for remote modification of the chemical composition of the atmosphere in term of its purification, for diagnostics of impurities and ozone replenishment in the regions of local open-quotes ozone holesclose quotes. In this connection a study of plasma chemical processes in such a discharge seems appropriate, as well as modeling of ecological consequences of the effect of powerful microwave radiation on the atmosphere. The present paper contains generalized results of studying the process of ozone formation in a pulse-periodic freely localized nanosecond microwave discharge. The experiments were performed in a wide range of parameters: microwave radiation wavelength λ = 0.8 and 3cm, pulse duration τ = 6 and 500ns, pulse power P = 50kW and 20MW, pulse repetition rate F = 1-10 3 Hz. The working gases were air and oxygen under pressure P = 10-100Torr. As a source of the microwave radiation a pulse magnetron was used with a device for pulse compression based on the waveguide resonator, and a relativistic microwave generator. The discharge was produced in the focus of the parabolic mirror and had the form of homogeneous cylinder. The plasma chemical processes were studied in two cases. The discharge was created either in the quartz tube placed along the focal line of the mirror or in the free air. Dynamics of formation of ozone and nitrogen oxides in the discharge was studied by means of absorption spectroscopy in the regime of accumulation of the products of chemical reactions (in a closed volume) and their diffusion spreading

  2. Microwave Measurements of Ferrite Polymer Composite Materials

    Directory of Open Access Journals (Sweden)

    Rastislav Dosoudil

    2004-01-01

    Full Text Available The article focuses on the microwave measurements performed on the nickel-zinc sintered ferrite with the chemical formula Ni0.3Zn0.7Fe2O4 produced by the ceramic technique and composite materials based on this ferrite and a non-magnetic polymer (polyvinyl chloride matrix. The prepared composite samples had the same particle size distribution 0-250um but different ferrite particle concentrations between 23 vol% and 80 vol%. The apparatus for measurement of the signal proportional to the absolute value of scattering parameter S11 (reflexion coefficient is described and the dependence of measured reflected signal on a bias magnetic field has been studied. By means of experiments, the resonances to be connected with the geometry of microwave experimental set-up were distinguished from ferromagnetic resonance arising in ferrite particles of composite structure. The role of local interaction fields of ferrite particles in composite material has been discussed.

  3. Microwave heat treatment as a substitute for conventional treatment of palm oil fruits

    International Nuclear Information System (INIS)

    Mujahid H Al-Fayadh; Nor Azura Masabbir Ali

    1996-01-01

    Microwave energy has become a sound method of heat treatment because of its high penetration power, cleanliness and possible economic significance. In this research, microwave heat was used as a substitute for conventional blanching method of palm oil fruits. Microwave treatment at 2450 MHz and 800 watts gave very close color and frn,frying characteristics to oil of blanched fruits after one minute exposure time. However, five minutes of microwave heat gave severe husk oil discoloration after 49 hours of deep frying, compared to all oils extracted from fruits treated by either low, microwave exposure time or conventional steam treatment. Kernel oil, after five minutes of microwave treatment, was less discolored than both steam or microwave-treated fruits for one minute. More carotenes and discoloration compounds may be contributed to discoloration during microwave treatments. Oil chemical constants of both husk and kernel oils treated by microwave heat were close to those treated by conventional heat. Further research is needed to investigate detailed oil characteristics and evaluate the feasibility study for using microwave energy, as a substitute for conventional heat in palm oil industry

  4. Pentacene thin-film transistors and inverters with plasma-enhanced atomic-layer-deposited Al2O3 gate dielectric

    International Nuclear Information System (INIS)

    Koo, Jae Bon; Lim, Jung Wook; Kim, Seong Hyun; Yun, Sun Jin; Ku, Chan Hoe; Lim, Sang Chul; Lee, Jung Hun

    2007-01-01

    The performances of pentacene thin-film transistor with plasma-enhanced atomic-layer-deposited (PEALD) 150 nm thick Al 2 O 3 dielectric are reported. Saturation mobility of 0.38 cm 2 /V s, threshold voltage of 1 V, subthreshold swing of 0.6 V/decade, and on/off current ratio of about 10 8 have been obtained. Both depletion and enhancement mode inverter have been realized with the change of treatment method of hexamethyldisilazane on PEALD Al 2 O 3 gate dielectric. Full swing depletion mode inverter has been demonstrated at input voltages ranging from 5 V to - 5 V at supply voltage of - 5 V

  5. Enhancement of flame development by microwave-assisted spark ignition in constant volume combustion chamber

    KAUST Repository

    Wolk, Benjamin; DeFilippo, Anthony; Chen, Jyh-Yuan; Dibble, Robert; Nishiyama, Atsushi; Ikeda, Yuji

    2013-01-01

    -thermal chemical kinetic enhancement from energy deposition to free electrons in the flame front and (2) induced flame wrinkling from excitation of flame (plasma) instability. The enhancement of flame development by microwaves diminishes as the initial pressure

  6. The electromagnetic wave energy effect(s) in microwave-assisted organic syntheses (MAOS).

    Science.gov (United States)

    Horikoshi, Satoshi; Watanabe, Tomoki; Narita, Atsushi; Suzuki, Yumiko; Serpone, Nick

    2018-03-26

    Organic reactions driven by microwaves have been subjected for several years to some enigmatic phenomenon referred to as the microwave effect, an effect often mentioned in microwave chemistry but seldom understood. We identify this microwave effect as an electromagnetic wave effect that influences many chemical reactions. In this article, we demonstrate its existence using three different types of microwave generators with dissimilar oscillation characteristics. We show that this effect is operative in photocatalyzed TiO 2 reactions; it negatively influences electro-conductive catalyzed reactions, and yet has but a negligible effect on organic syntheses. The relationship between this electromagnetic wave effect and chemical reactions is elucidated from such energetic considerations as the photon energy and the reactions' activation energies.

  7. Controlling the resistivity gradient in chemical vapor deposition-deposited aluminum-doped zinc oxide

    NARCIS (Netherlands)

    Ponomarev, M. V.; Verheijen, M. A.; Keuning, W.; M. C. M. van de Sanden,; Creatore, M.

    2012-01-01

    Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO: Al layers by focusing on the control

  8. Microwave superheaters for fusion

    International Nuclear Information System (INIS)

    Campbell, R.B.; Hoffman, M.A.; Logan, B.G.

    1987-01-01

    The microwave superheater uses the synchrotron radiation from a thermonuclear plasma to heat gas seeded with an alkali metal to temperatures far above the temperature of material walls. It can improve the efficiency of the Compact Fusion Advanced Rankine (CFAR) cycle described elsewhere in these proceedings. For a proof-of-principle experiment using helium, calculations show that a gas superheat ΔT of 2000 0 K is possible when the wall temperature is maintained at 1000 0 K. The concept can be scaled to reactor grade systems. Because of the need for synchrotron radiation, the microwave superheater is best suited for use with plasmas burning an advanced fuel such as D- 3 He. 5 refs

  9. Cryogenic microwave channelized receiver

    International Nuclear Information System (INIS)

    Rauscher, C.; Pond, J.M.; Tait, G.B.

    1996-01-01

    The channelized receiver being presented demonstrates the use of high temperature superconductor technology in a microwave system setting where superconductor, microwave-monolithic-integrated-circuit, and hybrid-integrated-circuit components are united in one package and cooled to liquid-nitrogen temperatures. The receiver consists of a superconducting X-band four-channel demultiplexer with 100-MHz-wide channels, four commercial monolithically integrated mixers, and four custom-designed hybrid-circuit detectors containing heterostructure ramp diodes. The composite receiver unit has been integrated into the payload of the second-phase NRL high temperature superconductor space experiment (HTSSE-II). Prior to payload assembly, the response characteristics of the receiver were measured as functions of frequency, temperature, and drive levels. The article describes the circuitry, discusses the key issues related to design and implementation, and summarizes the experimental results

  10. The Cosmic Microwave Background

    Directory of Open Access Journals (Sweden)

    Jones Aled

    1998-01-01

    Full Text Available We present a brief review of current theory and observations of the cosmic microwave background (CMB. New predictions for cosmological defect theories and an overview of the inflationary theory are discussed. Recent results from various observations of the anisotropies of the microwave background are described and a summary of the proposed experiments is presented. A new analysis technique based on Bayesian statistics that can be used to reconstruct the underlying sky fluctuations is summarised. Current CMB data is used to set some preliminary constraints on the values of fundamental cosmological parameters $Omega$ and $H_circ$ using the maximum likelihood technique. In addition, secondary anisotropies due to the Sunyaev-Zel'dovich effect are described.

  11. Physico-chemical and mechanical modifications of polyethylene and polypropylene by ion implantation, micro-wave plasma, electron beam radiation and gamma ray irradiation; Modifications physico-chimiques et mecaniques du polyethylene et du polypropylene par implantation ionique, plasma micro-ondes, bombardement d`electrons et irradiation gamma

    Energy Technology Data Exchange (ETDEWEB)

    Liao, J D

    1995-03-29

    A polyolefin surface becomes wettable when treated by micro-wave plasma or low-dose nitrogen ion implantation. A short time argon plasma treatment is sufficient to obtain polarizable peroxides on a polyolefin. X-ray photoelectron spectroscopy analyses, paramagnetic electronic resonance analyses, peroxides decomposition, wettability measurements and infrared active spectra analyses have shown that oxidized structures obtained from different treatment techniques play an important role in the interpretation of surface chemical properties of the polymer. Micro-wave plasma treatment, and in particular argon plasma treatment, yields more polarizable groups than ion implantation and is interesting for grafting. Hardness and elasticity modulus, measured by nano-indentation on a polyolefin, increase with an appropriate ion implantation dose. A 1.4 x 10{sup 17} ions.cm{sup -2} dose can multiply by 15 the hardness of high molecular weight polyethylene, and by 7 the elasticity modulus for a 30 nm depth. The viscous-plastic to quasi-elastic transition is shown. The thickness of the modified layer is over 300 nm. The study of friction between a metal sphere and a polyethylene cupula shows that ion implantation in the polymer creates a reticulated hard and elastic layer which improves its mechanical properties and reduces the erosion rate. Surface treatments on polymers used as biomaterials allow to adapt the surface properties to specific applications. 107 refs., 66 figs., 19 tabs., 4 annexes.

  12. Microwave solidification project overview

    Energy Technology Data Exchange (ETDEWEB)

    Sprenger, G.

    1993-01-01

    The Rocky Flats Plant Microwave Solidification Project has application potential to the Mixed Waste Treatment Project and the The Mixed Waste Integrated Program. The technical areas being addressed include (1) waste destruction and stabilization; (2) final waste form; and (3) front-end waste handling and feed preparation. This document covers need for such a program; technology description; significance; regulatory requirements; and accomplishments to date. A list of significant reports published under this project is included.

  13. Microwave solidification project overview

    International Nuclear Information System (INIS)

    Sprenger, G.

    1993-01-01

    The Rocky Flats Plant Microwave Solidification Project has application potential to the Mixed Waste Treatment Project and the The Mixed Waste Integrated Program. The technical areas being addressed include (1) waste destruction and stabilization; (2) final waste form; and (3) front-end waste handling and feed preparation. This document covers need for such a program; technology description; significance; regulatory requirements; and accomplishments to date. A list of significant reports published under this project is included

  14. Thermoactivation of viruses by microwaves

    Energy Technology Data Exchange (ETDEWEB)

    Mahnel, H.; von Brodorotti, H.S.

    1981-01-01

    Eight different viruses, suspended in drinking water, were examined for their ability to be inactivated by microwaves from a microwave oven. Up to a virus content of 10/sup 5/ TCID/sub 50//ml inactivation was successful within a few minutes of microwave treatment and occurred in parallel to the heat stability of the viruses. Evidence for direct effects of microwaves on viruses could not be detected. 7 of the viruses studied were inactivated rapidly when temperatures of 50 to 65/sup 0/C under microwave treatment were reached in the flowing water, while a bovine parvovirus was only inactivated by temperatures above 90/sup 0/C. The advantages of a thermal virus-decontamination of fluids and material by microwaves are discussed.

  15. A multifunctional microwave plasma reaction apparatus and its applications

    International Nuclear Information System (INIS)

    Wang Xizhang; Wu Qiang; Hu Zheng; Xu Hua; Miao Shui; Chen Yi

    2000-01-01

    A multifunctional apparatus for microwave plasma reaction has been set up, which can be used in the fields such as chemical synthesis, surface modification, and heterogeneous catalysis. The apparatus has laid an experimental foundation for new methods, new technologies, and new train of thoughts to be explored

  16. Microwave plasma deposition of diamond like carbon coatings

    Indian Academy of Sciences (India)

    Abstract. The promising applications of the microwave plasmas have been appearing in the fields of chemical processes and semiconductor manufacturing. Applications include surface deposition of all types including diamond/diamond like carbon (DLC) coatings, etching of semiconductors, promotion of organic reactions, ...

  17. Introduction to Microwave Linear [Accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Whittum, David H

    1999-01-04

    The elements of microwave linear accelerators are introduced starting with the principles of acceleration and accelerating structures. Considerations for microwave structure modeling and design are developed from an elementary point of view. Basic elements of microwave electronics are described for application to the accelerator circuit and instrumentation. Concepts of beam physics are explored together with examples of common beamline instruments. Charged particle optics and lattice diagnostics are introduced. Considerations for fixed-target and colliding-beam experimentation are summarized.

  18. Hybrid radio-frequency/direct-current plasma-enhanced chemical vapor deposition system for deposition on inner surfaces of polyethylene terephthalate bottles

    Science.gov (United States)

    Li, Jing; Tian, Xiubo; Gong, Chunzhi; Yang, Shiqin; Fu, Ricky K. Y.; Chu, Paul K.

    2009-12-01

    A hybrid radio-frequency (rf)/direct-current (dc) system has been developed to control the biasing effects during deposition of diamondlike carbon (DLC) films onto the inner wall of polyethylene terephthalate (PET) bottles. An additional dc bias is coupled to the rf electrode to produce the effect of equivalent rf self-biasing. This allows more flexible control of the deposition of the DLC films which are intended to improve the gas barrier characteristics. The experimental results demonstrate that the additional dc bias improves the adhesion strength between the DLC film and PET, although the enhancement in the gas barrier properties is not significantly larger compared to the one without dc bias. The apparatus and methodology have practical importance in the food and beverage industry.

  19. Hybrid radio-frequency/direct-current plasma-enhanced chemical vapor deposition system for deposition on inner surfaces of polyethylene terephthalate bottles

    International Nuclear Information System (INIS)

    Li Jing; Gong Chunzhi; Yang Shiqin; Tian Xiubo; Fu, Ricky K. Y.; Chu, Paul K.

    2009-01-01

    A hybrid radio-frequency (rf)/direct-current (dc) system has been developed to control the biasing effects during deposition of diamondlike carbon (DLC) films onto the inner wall of polyethylene terephthalate (PET) bottles. An additional dc bias is coupled to the rf electrode to produce the effect of equivalent rf self-biasing. This allows more flexible control of the deposition of the DLC films which are intended to improve the gas barrier characteristics. The experimental results demonstrate that the additional dc bias improves the adhesion strength between the DLC film and PET, although the enhancement in the gas barrier properties is not significantly larger compared to the one without dc bias. The apparatus and methodology have practical importance in the food and beverage industry.

  20. Structure and gas-barrier properties of amorphous hydrogenated carbon films deposited on inner walls of cylindrical polyethylene terephthalate by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Jing; Gong Chunzhi; Tian Xiubo; Yang Shiqin; Fu, Ricky K.Y.; Chu, Paul K.

    2009-01-01

    The influence of radio-frequency (RF) power on the structure and gas permeation through amorphous hydrogenated carbon films deposited on cylindrical polyethylene terephthalate (PET) samples is investigated. The results show that a higher radio-frequency power leads to a smaller sp 3 /sp 2 value but produces fewer defects with smaller size. The permeability of PET samples decreases significantly after a-C:H deposition and the RF only exerts a small influence. However, the coating uniformity, color, and wettability of the surface are affected by the RF power. A higher RF power results in to better uniformity and it may be attributed to the combination of the high-density plasma and sample heating.

  1. Effects of argon and oxygen flow rate on water vapor barrier properties of silicon oxide coatings deposited on polyethylene terephthalate by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Kim, Sung-Ryong; Choudhury, Moinul Haque; Kim, Won-Ho; Kim, Gon-Ho

    2010-01-01

    Plasma polymer coatings were deposited from hexamethyldisiloxane on polyethylene terephthalate (PET) substrates while varying the operating conditions, such as the Ar and O 2 flow rates, at a fixed radio frequency power of 300 W. The water vapor transmission rate (WVTR) of the untreated PET was 54.56 g/m 2 /day and was decreased after depositing the silicon oxide (SiO x ) coatings. The minimum WVTR, 0.47 g/m 2 /day, was observed at Ar and O 2 flow rates of 4 and 20 sccm, respectively, with a coating thickness of 415.44 nm. The intensity of the peaks for the Si-O-Si bending at 800-820 cm -1 and Si-O-Si stretching at 1000-1150 cm -1 varied depending on the Ar and O 2 flow rates. The contact angle of the SiO x coated PET increased as the Ar flow rate was increased from 2 to 8 sccm at a fixed O 2 flow rate of 20 sccm. It decreased gradually as the oxygen flow rate increased from 12 to 28 sccm at a fixed Ar carrier gas flow rate. The examination by atomic force microscopy revealed a correlation of the SiO x morphology and the water vapor barrier performance with the Ar and O 2 flow rates. The roughness of the deposited coatings increased when either the O 2 or Ar flow rate was increased.

  2. Hybrid radio-frequency/direct-current plasma-enhanced chemical vapor deposition system for deposition on inner surfaces of polyethylene terephthalate bottles

    Energy Technology Data Exchange (ETDEWEB)

    Li Jing; Gong Chunzhi; Yang Shiqin [Institute of Plasma Surface Engineering and Equipment, State Key Laboratory of Advanced Welding Production and Technology, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Tian Xiubo [Institute of Plasma Surface Engineering and Equipment, State Key Laboratory of Advanced Welding Production and Technology, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon (Hong Kong); Fu, Ricky K. Y.; Chu, Paul K. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon (Hong Kong)

    2009-12-15

    A hybrid radio-frequency (rf)/direct-current (dc) system has been developed to control the biasing effects during deposition of diamondlike carbon (DLC) films onto the inner wall of polyethylene terephthalate (PET) bottles. An additional dc bias is coupled to the rf electrode to produce the effect of equivalent rf self-biasing. This allows more flexible control of the deposition of the DLC films which are intended to improve the gas barrier characteristics. The experimental results demonstrate that the additional dc bias improves the adhesion strength between the DLC film and PET, although the enhancement in the gas barrier properties is not significantly larger compared to the one without dc bias. The apparatus and methodology have practical importance in the food and beverage industry.

  3. Effect of the substrate surface topology and temperature on the structural properties of ZnO layers obtained by plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kitova, S; Danev, G, E-mail: skitova@clf.bas.b [Acad. J .Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl.109, 1113 Sofia (Bulgaria)

    2010-04-01

    In this work thin ZnO layers were grown by metal-organic PECVD (RF 13.56 MHz) on Si wafers. Zn acetylacetonate was used as a precursor and oxygen as oxidant. A system for dosed injection of the precursor and oxidant into the plasma reactor was developed. The influence of the substrate surface topology and temperature on the structural properties of the deposited layers was studied. ZnO and graphite powder dispersions were used to modify the silicon wafers before starting the deposition process of the layers. Some of the ZnO layers were deposited on the back, unpolished, side of Si wafers. Depositions at 400 {sup 0}C were performed to examine the effect of the substrate temperatures on the layer growth. The film structure was examined by XRD and SEM. The results show that all layers are crystalline with hexagonal wurtzite structure. The crystallites are preferentially oriented along the c-axis direction perpendicular to the substrate surfaces. ZnO layers deposited on thin ZnO seed films and clean Si surface exhibit well-developed grain structures and more c-axis preferred phase with better crystal quality than that of the layers deposited on graphite seed layer or rough, unpolished Si wafer.

  4. Process control by optical emission spectroscopy during growth of a-C:H from a CH4 plasma by plasma-enhanced chemical vapour deposition

    DEFF Research Database (Denmark)

    Barholm-Hansen, C; Bentzon, MD; Vigild, Martin Etchells

    1994-01-01

    During the growth of a-C:H thin films for tribological applications, the characteristic optical emission from a CH4 plasma was used to estimate growth conditions such as the degree of dissociation of the feed gas, the deposition rate and the presence of impurities. Films were fabricated with vari...

  5. Synthesis of cocarboxylase: process intensification via microwave irradiation

    OpenAIRE

    Пинчукова, Наталия Александровна; Волошко, Александр Юрьевич; Горобец, Николай Юрьевич; Беликов, Константин Николаевич; Гудзенко, Людмила Васильевна; Чебанов, Валентин Анатольевич

    2013-01-01

    Energy saving is the key point in the development of new chemical technologies and industrial scaling of the processes of obtaining chemical reagents, functional materials, pharmaceutical substances, etc. The use of the non-classical process activation methods, including microwave radiation, known as effective heating source, allowing significant process acceleration, is a promising direction in the field of new energy-saving technologies.The paper gives the results of modeling of the process...

  6. Non-Ionizing Radiation Used in Microwave Ovens

    Science.gov (United States)

    ... Non-Ionizing Radiation Used in Microwave Ovens Non-Ionizing Radiation Used in Microwave Ovens Explore the interactive, virtual ... can do Where to learn more About Non-Ionizing Radiation Used in Microwave Ovens Microwave Oven. Microwave ovens ...

  7. The European Microwave Week 2008 and its Microwave Conferences

    NARCIS (Netherlands)

    Hoogeboom, P.; Van Vliet, F.

    2009-01-01

    Under the auspices of the European Microwave Association (EuMA) the 11th annual European Microwave Week was organized in the Amsterdam RAI Congress Centre, The Netherlands, 27-31 October 2008. This major event consisted this year of five conferences, an exhibition, and various side events. The 38th

  8. Microwaves in chemistry: Another way of heating reaction mixtures

    Science.gov (United States)

    Berlan, J.

    1995-04-01

    The question of a possible "microwave activation" of chemical reaction is discussed. In fact two cases should be distinguished: homogeneous or heterogeneous reaction mixtures. In homogeneous mixtures there are no (or very low) rate enhancements compared to a conventional heating, but some influence on chemioselectivity has been observed. These effects derive from fast and mass heating of microwaves, and probably, especially under reflux, from different boiling rates and/or overheating. With heterogeneous mixtures non conventional effects probably derive from mass heating and selective overheating. This is illustrated with several reactions: Diels-Alder, naphthalene sulphonation, preparation of cyanuric acid, hydrolysis of nitriles, transposition reaction on solid support.

  9. Ceramic-glass-metal seal by microwave heating

    Science.gov (United States)

    Meek, Thomas T.; Blake, Rodger D.

    1985-01-01

    A method for producing a ceramic-glass-metal seal by microwaving mixes a slurry of glass sealing material and coupling agent and applies same to ceramic and metal workpieces. The slurry and workpieces are then insulated and microwaved at a power, time and frequency sufficient to cause a liquid phase reaction in the slurry. The reaction of the glass sealing material forms a chemically different seal than that which would be formed by conventional heating because it is formed by diffusion rather than by wetting of the reactants.

  10. Microwave Radiometry in Remote Sensing

    DEFF Research Database (Denmark)

    Gudmandsen, Preben

    1982-01-01

    Microwave radiometry has shown its capabilities of observing and monitoring large-scale geophysical observables from space. Examples are sea surface temperature and surface wind over the ocean, sea ice extent, concentration and category and snow cover extent and water content. At low microwave fr...

  11. Advances on integrated microwave photonics

    DEFF Research Database (Denmark)

    Dong, Jianji; Liao, Shasha; Yan, Siqi

    2017-01-01

    Integrated microwave photonics has attracted a lot of attentions and makes significant improvement in last 10 years. We have proposed and demonstrated several schemes about microwave photonics including waveform generation, signal processing and energy-efficient micro-heaters. Our schemes are all...

  12. Computer-Generated Microwave Holograms.

    Science.gov (United States)

    Leming, Charles W.; Hastings, Orestes Patterson, III

    1980-01-01

    Described is the phasor method of superposition of waves. The intensity pattern from a system of microwave sources is calculated point by point on a plane corresponding to a film emulsion, and then printed and directly converted to a hologram for 3-cm microwaves. Calculations, construction, and viewing of holograms are included. (Author/DS)

  13. The cosmic microwave background

    International Nuclear Information System (INIS)

    Silk, J.

    1991-01-01

    Recent limits on spectral distortions and angular anisotropies in the cosmic microwave background are reviewed. The various backgrounds are described, and the theoretical implications are assessed. Constraints on inflationary cosmology dominated by cold dark matter (CDM) and on open cosmological models dominated by baryonic dark matter (BDM), with, respectively, primordial random phase scale-invariant curvature fluctuations or non-gaussian isocurvature fluctuations are described. More exotic theories are addressed, and I conclude with the 'bottom line': what theories expect experimentalists to be measuring within the next two to three years without having to abandon their most cherished theorists. (orig.)

  14. 2-mm microwave interferometer

    International Nuclear Information System (INIS)

    Futch, A.H.; Mortensen, W.K.

    1977-01-01

    A 2-mm microwave interferometer has been developed, and phase shift measurements have been made on the Baseball II experiment. The interferometer system employs a 140-GHz receiver for double down conversion of the plasma signal to a 60-MHz, IF frequency. The 140-GHz references signal is also down-converted and compared with the plasma signal to provide the desired phase change of the signal passing through the plasma. A feedback voltage from a 60-MHz discriminator to a voltage-controlled oscillator in the receiver provides frequency stability of the 60-MHz IF signals

  15. Microwave warning device

    International Nuclear Information System (INIS)

    Shriner, W.

    1981-01-01

    A device for warning a person carrying or wearing it of the presence of dangerous microwave radiation is fully powered by the radiations being detected. A very low-wattage gas-discharge lamp is energized by a broadly or a sharply tuned receiver circuit including dipole antennas or one antenna and a ''grounding'' casing element. The casing may be largely and uniformly transparent or have different areas gradedly light-transmissive to indicate varying radiation intensities. The casing can be made in the shape of a pocket watch, fountain pen, bracelet or finger ring, etc

  16. Resonant freak microwaves

    International Nuclear Information System (INIS)

    Aguiar, F.M. de

    2011-01-01

    The Helmholtz equation describing transverse magnetic modes in a closed flat microwave resonator with 60 randomly distributed discs is numerically solved. At lower frequencies, the calculated wave intensity spatially distributed obeys the universal Porter-Thomas form if localized modes are excluded. A superposition of resonant modes is shown to lead to rare events of extreme intensities (freak waves) at localized 'hot spots'. The temporally distributed intensity of such a superposition at the center of a hot spot also follows the Porter-Thomas form. Branched modes are found at higher frequencies. The results bear resemblance to recent experiments reported in an open cavity.

  17. DSN Microwave Antenna Holography

    Science.gov (United States)

    Rochblatt, D. J.; Seidel, B. L.

    1984-01-01

    The DSN microwave antenna holography project will obtain three-dimensional pictures of the large DSN antenna surfaces. These pictures must be of suffi icient resolution to allow adjustment of the reflector panels to an rms surface of 0.5 mm (0.25 mm, goal). The major parameters and equations needed to define a holographic measurement system are outlined and then the proof of concept demonstration measurement that was made at DSS-43 (Australia) that resulted in contour maps with spatial resolution of 7 m in the aperture plane and resolution orthogonal to the aperture plane of 0.7 mm was discussed.

  18. On the existence of and mechanism for microwave-specific reaction rate enhancement.

    Science.gov (United States)

    Dudley, Gregory B; Richert, Ranko; Stiegman, A E

    2015-04-01

    The use of microwave radiation to drive chemical reactions has become ubiquitous in almost all fields of chemistry. In all of these areas it is principally due to rapid and convenient heating resulting in significantly higher rates of reaction, with other advantages including enhanced product selectivity and control of materials properties. Although microwave heating continues to grow as an enabling technology, fundamental research into the nature of microwave heating has not grown at the same rate. In the case of chemical reactions run in homogeneous solution, particularly synthetic organic reactions, there is considerable controversy over the origins of rate enhancement, with a fundamental question being whether there exist microwave-specific effects, distinct from what can be attained under conventional convective heating, that can accelerate a reaction rate. In this Perspective, we discuss unique aspects of microwave heating of molecules in solution and discuss the origin and nature of microwave-specific effects arising from the process of "selective heating" of reactants in solution. Integral to this discussion is work from the field of dielectric relaxation spectroscopy, which provides a model for selective heating by Debye relaxation processes. The Perspective also includes a critical discussion of hypotheses of non-thermal effects (alternatively classified here as resonant processes) and an outline of specific reaction parameters for chemical systems in which microwave-specific Debye relaxation processes can result in observable reaction rate enhancement.

  19. Passive Microwave Components and Antennas

    DEFF Research Database (Denmark)

    State-of-the-art microwave systems always require higher performance and lower cost microwave components. Constantly growing demands and performance requirements of industrial and scientific applications often make employing traditionally designed components impractical. For that reason, the design...... and development process remains a great challenge today. This problem motivated intensive research efforts in microwave design and technology, which is responsible for a great number of recently appeared alternative approaches to analysis and design of microwave components and antennas. This book highlights...... techniques. Modelling and computations in electromagnetics is a quite fast-growing research area. The recent interest in this field is caused by the increased demand for designing complex microwave components, modeling electromagnetic materials, and rapid increase in computational power for calculation...

  20. Evaluating superconductors for microwave applications

    International Nuclear Information System (INIS)

    Hammond, B.; Bybokas, J.

    1989-01-01

    It is becoming increasingly obvious that some of the earliest applications for high Tc superconductors will be in the microwave market. While this is a major opportunity for the superconductor community, it also represents a significant challenge. At DC or low frequencies a superconductor can be easily characterized by simple measurements of resistivity and magnetic susceptibility versus temperature. These parameters are fundamental to superconductor characterization and various methods exist for measuring them. The only valid way to determine the microwave characteristics of a superconductor is to measure it at microwave frequencies. It is for this reason that measuring microwave surface resistance has emerged as one of the most demanding and telling tests for materials intended for high frequency applications. In this article, the theory of microwave surface resistance is discussed. Methods for characterizing surface resistance theoretically and by practical implementation are described

  1. Purchase of Microwave Reactors for Implementation of Small-scale Microwave-accelerated Organic Chemistry Laboratory Program in Undergraduate Curriculum and Synthetic Chemistry Research at HU

    Science.gov (United States)

    2015-05-16

    and S. Shaun Murphree Journal of Chemical Education 2009 86 (2), 227 19. Microwave-Assisted Synthesis of a Natural Insecticide on Basic...NMR Spectroscopy and Molecular Modeling Roosevelt Shaw, Ashika Severin, Miguel Balfour, and Columbus Nettles Journal of Chemical Education 2005 82

  2. Optimization of microwave pretreatment on wheat straw for ethanol production

    DEFF Research Database (Denmark)

    Xu, Jian; Chen, Hongzhang; Kádár, Zsófia

    2011-01-01

    An orthogonal design (L9(34)) was used to optimize the microwave pretreatment on wheat straw for ethanol production. The orthogonal analysis was done based on the results obtained from the nine pretreatments. The effect of four factors including the ratio of biomass to NaOH solution, pretreatment...... time, microwave power, and the concentration of NaOH solution with three different levels on the chemical composition, cellulose/hemicellulose recoveries and ethanol concentration was investigated. According to the orthogonal analysis, pretreatment with the ratio of biomass to liquid at 80 g kg−1......, the NaOH concentration of 10 kg m−3, the microwave power of 1000 W for 15 min was confirmed to be the optimal condition. The ethanol yield was 148.93 g kg−1 wheat straw at this condition, much higher than that from the untreated material which was only 26.78 g kg−1....

  3. Microwave systems design

    CERN Document Server

    Awang, Zaiki

    2014-01-01

    The aim of this book is to serve as a design reference for students and as an up-to-date reference for researchers. It also acts as an excellent introduction for newcomers to the field and offers established rf/microwave engineers a comprehensive refresher.  The content is roughly classified into two – the first two chapters provide the necessary fundamentals, while the last three chapters focus on design and applications. Chapter 2 covers detailed treatment of transmission lines. The Smith chart is utilized in this chapter as an important tool in the synthesis of matching networks for microwave amplifiers. Chapter 3 contains an exhaustive review of microstrip circuits, culled from various references. Chapter 4 offers practical design information on solid state amplifiers, while Chapter 5 contains topics on the design of modern planar filters, some of which were seldom published previously. A set of problems at the end of each chapter provides the readers with exercises which were compiled from actual uni...

  4. Microwave hematoma detector

    Science.gov (United States)

    Haddad, Waleed S.; Trebes, James E.; Matthews, Dennis L.

    2001-01-01

    The Microwave Hematoma Detector is a non-invasive device designed to detect and localize blood pooling and clots near the outer surface of the body. While being geared towards finding sub-dural and epi-dural hematomas, the device can be used to detect blood pooling anywhere near the surface of the body. Modified versions of the device can also detect pneumothorax, organ hemorrhage, atherosclerotic plaque in the carotid arteries, evaluate perfusion (blood flow) at or near the body surface, body tissue damage at or near the surface (especially for burn assessment) and be used in a number of NDE applications. The device is based on low power pulsed microwave technology combined with a specialized antenna, signal processing/recognition algorithms and a disposable cap worn by the patient which will facilitate accurate mapping of the brain and proper function of the instrument. The invention may be used for rapid, non-invasive detection of sub-dural or epi-dural hematoma in human or animal patients, detection of hemorrhage within approximately 5 cm of the outer surface anywhere on a patient's body.

  5. Utilization of microwave energy for decontamination of oil polluted soils.

    Science.gov (United States)

    Iordache, Daniela; Niculae, Dumitru; Francisc, Ioan Hathazi

    2010-01-01

    Soil oil (petroleum) product pollution represents a great environmental threat as it may contaminate the neighboring soils and surface and underground water. Liquid fuel contamination may occur anywhere during oil (petroleum) product transportation, storing, handling and utilization. The polluted soil recovery represents a complex process due to the wide range of physical, chemical and biological properties of soils which should be analyzed in connection with the study of the contaminated soil behavior under the microwave field action. The soil, like any other non-metallic material, can be heated through microwave energy absorption due to the dielectric losses, expressed by its dielectric complex constant. Oil polluted soil behaves differently in a microwave field depending on the nature, structure and amount of the polluting fuel. Decontamination is performed through volatilization and retrieval of organic contaminant volatile components. After decontamination only a soil fixed residue remains, which cannot penetrate the underground anymore. In carrying out the soil recovery process by means of this technology we should also consider the soil characteristics such as: the soil type, temperature, moisture.The first part of the paper presents the theoretical aspects relating to the behavior of the polluted soil samples in the microwave field, as well as their relating experimental data. The experimental data resulting from the analysis of soils with a different level of pollution point out that the degree of pollutant recovery is high, contributing to changing the initial classification of soils from the point of view of pollution. The paper graphically presents the levels of microwave generated and absorbed power in soil samples, soil temperature during experimentations, specific processing parameters in a microwave field. It also presents the constructive solution of the microwave equipment designed for the contaminated soil in situ treatment.

  6. Aquecimento em forno de microondas / desenvolvimento de alguns conceitos fundamentais Heating in microwave ovens/ developing of basic concepts

    Directory of Open Access Journals (Sweden)

    Ana Claudia R. N. Barboza

    2001-12-01

    Full Text Available The microwave oven became a common domestic equipment, due mainly to the short time spent to heat foods. One of the most interesting characteristics of the microwave oven is the selective heating. Different from the conventional oven, where the heating is not selective, the heating by microwave depends on the chemical nature of the matter. Many Students of Chemistry have no knowledge of the principles involved in this selective heating, in spite of the daily microwave oven use. The heating by microwave is feasible for chemistry courses. In discussions about the microwave absorption by the matter it is possible to explore chemical properties like: heat capacity, chemical bound, molecular structure, dipole moments, polarization and dielectric constant. This paper presents the basic principles involved in the microwave heating. It is proposed a simple and inexpensive experiment that could be developed in general chemistry courses, to illustrate the relationship between heating and the chemical properties of some solvents. Experiments to check the power of the microwave oven are also proposed.

  7. A microwave-irradiated Streptococcus agalactiae vaccine provides partial protection against experimental challenge in Nile tilapia, Oreochromis niloticus

    Science.gov (United States)

    Microwave irradiation, as opposed to formalin exposure, has not routinely been used in the preparation of killed vaccines despite the advantages of decreased chemical toxicity, ability to kill cells quickly, ease of completion requiring only a standard microwave, and potential increased protein cons...

  8. Microwave Frequency Multiplier

    Science.gov (United States)

    Velazco, J. E.

    2017-02-01

    High-power microwave radiation is used in the Deep Space Network (DSN) and Goldstone Solar System Radar (GSSR) for uplink communications with spacecraft and for monitoring asteroids and space debris, respectively. Intense X-band (7.1 to 8.6 GHz) microwave signals are produced for these applications via klystron and traveling-wave microwave vacuum tubes. In order to achieve higher data rate communications with spacecraft, the DSN is planning to gradually furnish several of its deep space stations with uplink systems that employ Ka-band (34-GHz) radiation. Also, the next generation of planetary radar, such as Ka-Band Objects Observation and Monitoring (KaBOOM), is considering frequencies in the Ka-band range (34 to 36 GHz) in order to achieve higher target resolution. Current commercial Ka-band sources are limited to power levels that range from hundreds of watts up to a kilowatt and, at the high-power end, tend to suffer from poor reliability. In either case, there is a clear need for stable Ka-band sources that can produce kilowatts of power with high reliability. In this article, we present a new concept for high-power, high-frequency generation (including Ka-band) that we refer to as the microwave frequency multiplier (MFM). The MFM is a two-cavity vacuum tube concept where low-frequency (2 to 8 GHz) power is fed into the input cavity to modulate and accelerate an electron beam. In the second cavity, the modulated electron beam excites and amplifies high-power microwaves at a frequency that is a multiple integer of the input cavity's frequency. Frequency multiplication factors in the 4 to 10 range are being considered for the current application, although higher multiplication factors are feasible. This novel beam-wave interaction allows the MFM to produce high-power, high-frequency radiation with high efficiency. A key feature of the MFM is that it uses significantly larger cavities than its klystron counterparts, thus greatly reducing power density and arcing

  9. A Microwave Thermostatic Reactor for Processing Liquid Materials Based on a Heat-Exchanger.

    Science.gov (United States)

    Zhou, Yongqiang; Zhang, Chun; Xie, Tian; Hong, Tao; Zhu, Huacheng; Yang, Yang; Liu, Changjun; Huang, Kama

    2017-10-08

    Microwaves have been widely used in the treatment of different materials. However, the existing adjustable power thermostatic reactors cannot be used to analyze materials characteristics under microwave effects. In this paper, a microwave thermostatic chemical reactor for processing liquid materials is proposed, by controlling the velocity of coolant based on PLC (programmable logic controller) in different liquid under different constant electric field intensity. A nonpolar coolant (Polydimethylsiloxane), which is completely microwave transparent, is employed to cool the liquid materials. Experiments are performed to measure the liquid temperature using optical fibers, the results show that the precision of temperature control is at the range of ±0.5 °C. Compared with the adjustable power thermostatic control system, the effect of electric field changes on material properties are avoided and it also can be used to detect the properties of liquid materials and special microwave effects.

  10. Microwave mixer technology and applications

    CERN Document Server

    Henderson, Bert

    2013-01-01

    Although microwave mixers play a critical role in wireless communication and other microwave applications employing frequency conversion circuits, engineers find that most books on this subject emphasize theoretical aspects, rather than practical applications. That's about to change with the forthcoming release of Microwave Mixer Technology and Applications. Based on a review of over one thousand patents on mixers and frequency conversion, authors Bert Henderson and Edmar Camargo have written a comprehensive book for mixer designers who want solid ideas for solving their own design challenges.

  11. Microwave and pulsed power engineering

    International Nuclear Information System (INIS)

    Hofer, W.W.

    1984-01-01

    The Microwave and Pulsed Power Engineering Thrust Area is responsible for developing the short-term and long-term engineering resources required to support the growing microwave and pulsed power engineering requirements of several LLNL Programs. The responsibility of this Thrust Area is to initiate applicable research and development projects and to provide capabilities and facilities to permit engineers involved in these and other programs to make significant contributions. In this section, the principal projects are described: dielectric failure prediction using partial discharge analysis, coating dielectrics to increase surface flashover potential, and the microwave generator experiment

  12. Microwave Absorption Characteristics of Tire

    Science.gov (United States)

    Zhang, Yuzhe; Hwang, Jiann-Yang; Peng, Zhiwei; Andriese, Matthew; Li, Bowen; Huang, Xiaodi; Wang, Xinli

    The recycling of waste tires has been a big environmental problem. About 280 million waste tires are produced annually in the United States and more than 2 billion tires are stockpiled, which cause fire hazards and health issues. Tire rubbers are insoluble elastic high polymer materials. They are not biodegradable and may take hundreds of years to decompose in the natural environment. Microwave irradiation can be a thermal processing method for the decomposition of tire rubbers. In this study, the microwave absorption properties of waste tire at various temperatures are characterized to determine the conditions favorable for the microwave heating of waste tires.

  13. Microwave antenna holography

    Science.gov (United States)

    Rochblatt, David J.; Seidel, Boris L.

    1992-01-01

    This microwave holography technique utilizes the Fourier transform relation between the complex far field radiation pattern of an antenna and the complex aperture field distribution. Resulting aperture phase and amplitude distribution data can be used to precisely characterize various crucial performance parameters, including panel alignment, panel shaping, subreflector position, antenna aperture illumination, directivity at various frequencies, and gravity deformation effects. The methodology of data processing presented here was successfully applied to the Deep Space Network (DSN) 34-m beam waveguide antennas. The antenna performance was improved at all operating frequencies by reducing the main reflector mechanical surface rms error to 0.43 mm. At Ka-band (32 GHz), the estimated improvement is 4.1 dB, resulting in an aperture efficiency of 52 percent. The performance improvement was verified by efficiency measurements and additional holographic measurements.

  14. Microwave Thermal Propulsion

    Science.gov (United States)

    Parkin, Kevin L. G.; Lambot, Thomas

    2017-01-01

    We have conducted research in microwave thermal propulsion as part of the space exploration access technologies (SEAT) research program, a cooperative agreement (NNX09AF52A) between NASA and Carnegie Mellon University. The SEAT program commenced on the 19th of February 2009 and concluded on the 30th of September 2015. The DARPA/NASA Millimeter-wave Thermal Launch System (MTLS) project subsumed the SEAT program from May 2012 to March 2014 and one of us (Parkin) served as its principal investigator and chief engineer. The MTLS project had no final report of its own, so we have included the MTLS work in this report and incorporate its conclusions here. In the six years from 2009 until 2015 there has been significant progress in millimeter-wave thermal rocketry (a subset of microwave thermal rocketry), most of which has been made under the auspices of the SEAT and MTLS programs. This final report is intended for multiple audiences. For researchers, we present techniques that we have developed to simplify and quantify the performance of thermal rockets and their constituent technologies. For program managers, we detail the facilities that we have built and the outcomes of experiments that were conducted using them. We also include incomplete and unfruitful lines of research. For decision-makers, we introduce the millimeter-wave thermal rocket in historical context. Considering the economic significance of space launch, we present a brief but significant cost-benefit analysis, for the first time showing that there is a compelling economic case for replacing conventional rockets with millimeter-wave thermal rockets.

  15. Converting a Microwave Oven into a Plasma Reactor: A Review

    Directory of Open Access Journals (Sweden)

    Victor J. Law

    2018-01-01

    Full Text Available This paper reviews the use of domestic microwave ovens as plasma reactors for applications ranging from surface cleaning to pyrolysis and chemical synthesis. This review traces the developments from initial reports in the 1980s to today’s converted ovens that are used in proof-of-principle manufacture of carbon nanostructures and batch cleaning of ion implant ceramics. Information sources include the US and Korean patent office, peer-reviewed papers, and web references. It is shown that the microwave oven plasma can induce rapid heterogeneous reaction (solid to gas and liquid to gas/solid plus the much slower plasma-induced solid state reaction (metal oxide to metal nitride. A particular focus of this review is the passive and active nature of wire aerial electrodes, igniters, and thermal/chemical plasma catalyst in the generation of atmospheric plasma. In addition to the development of the microwave oven plasma, a further aspect evaluated is the development of methodologies for calibrating the plasma reactors with respect to microwave leakage, calorimetry, surface temperature, DUV-UV content, and plasma ion densities.

  16. Numerical Analysis of Microwave Heating on Saponification Reaction

    Science.gov (United States)

    Huang, Kama; Jia, Kun

    2005-01-01

    Currently, microwave is widely used in chemical industry to accelerate chemical reactions. Saponification reaction has important applications in industry; some research results have shown that microwave heating can significantly accelerate the reaction [1]. But so far, no efficient method has been reported for the analysis of the heating process and design of an efficient reactor powered by microwave. In this paper, we present a method to study the microwave heating process on saponification reaction, where the reactant in a test tube is considered as a mixture of dilute solution. According to the preliminary measurement results, the effective permittivity of the mixture is approximately the permittivity of water, but the conductivity, which could change with the reaction, is derived from the reaction equation (RE). The electromagnetic field equation and reaction equation are coupled by the conductivity. Following that, the whole heating processes, which is described by Maxwell's equations, the reaction equation and heat transport equation (HTE), is analyzed by finite difference time domain (FDTD) method. The temperature rising in the test tube are measured and compared with the computational results. Good agreement can be seen between the measured and calculated results.

  17. Fast microwave assisted pyrolysis of biomass using microwave absorbent.

    Science.gov (United States)

    Borges, Fernanda Cabral; Du, Zhenyi; Xie, Qinglong; Trierweiler, Jorge Otávio; Cheng, Yanling; Wan, Yiqin; Liu, Yuhuan; Zhu, Rongbi; Lin, Xiangyang; Chen, Paul; Ruan, Roger

    2014-03-01

    A novel concept of fast microwave assisted pyrolysis (fMAP) in the presence of microwave absorbents was presented and examined. Wood sawdust and corn stover were pyrolyzed by means of microwave heating and silicon carbide (SiC) as microwave absorbent. The bio-oil was characterized, and the effects of temperature, feedstock loading, particle sizes, and vacuum degree were analyzed. For wood sawdust, a temperature of 480°C, 50 grit SiC, with 2g/min of biomass feeding, were the optimal conditions, with a maximum bio-oil yield of 65 wt.%. For corn stover, temperatures ranging from 490°C to 560°C, biomass particle sizes from 0.9mm to 1.9mm, and vacuum degree lower than 100mmHg obtained a maximum bio-oil yield of 64 wt.%. This study shows that the use of microwave absorbents for fMAP is feasible and a promising technology to improve the practical values and commercial application outlook of microwave based pyrolysis. Copyright © 2014 Elsevier Ltd. All rights reserved.

  18. Microwave pre-heating of natural rubber using a rectangular wave guide (MODE: TE10

    Directory of Open Access Journals (Sweden)

    Doo-ngam, N.

    2007-11-01

    Full Text Available This paper presents an application of microwave radiation for pre-heating of natural rubbercompounding with various sulphur contents. The natural rubber-compounding was pre-heated by microwave radiation using a rectangular wave guide system (MODE: TE10 operating at frequency of 2.45 GHz in which the power can vary from 0 to 1500 W. In the present work, the influence of power input, sample thickness, and sulphur content were examined after applying microwave radiation to the rubber samples. Results are discussed regarding the thermal properties, 3-D network, dielectric properties and chemical structures. From the result, firstly, it was found that microwave radiation can be applied to pre-heating natural rubber-compounding before the vulcanization process. Secondly, microwave radiation was very useful for pre-heating natural rubber-compounding that has a thickness greater than 5mm. Thirdly, crosslinking in natural rubber-compounding may occurs after pre-heating by microwave radiation though Fourier Transform Infrared Spectroscopy(FTIR. Finally, there a little effect of sulphur content on temperature profiles after applying microwave radiation to the natural rubber-compounding. Moreover, natural rubber-compounding without carbon black showed a lower heat absorption compared with natural rubbercompounding filled carbon black. This is due to the difference in dielectric loss factor. This preliminary result will be useful information in terms of microwave radiation for pre-heating natural rubber-compounding and rubber processing in industry.

  19. Microwave induced stimulation of 32Pi incorporation into phosphoinositides of rat brain synaptosomes

    International Nuclear Information System (INIS)

    Gandhi, C.R.; Ross, D.H.

    1989-01-01

    Exposure of synaptosomes to microwave radiation at a power density of 10 mW/sq cm or more produced stimulation of the 32 Pi-incorporation into phosphoinositides. The extent of 32 Pi incorporation was found to be much more pronounced in phosphatidylinositol-4-phosphate (PIP), and phosphatidylinositol-4,5-bisphosphate (PIP 2 ) as compared to phosphatidylinositol (PI) and phosphatidic acid (PA). Other lipids were also found to incorporate 32 Pi but no significant changes in their labeling were seen after exposure to microwave radiation. Inclusion of 10 mM lithium in the medium reduced the basal labeling of PIP 2 , PIP and PI and increased PA labeling. Li + also inhibited the microwave stimulated PIP 2 , PIP and PI labeling but had no effect on PA labeling. Calcium inophore, A 23187 , inhibited the basal and microwave stimulated 32 Pi labeling of PIP and PIP 2 , stimulated basal labeling of PA and PI and had no effect on microwave stimulated PA and PI labeling. Calcium chelator, EGTA, on the other hand, had no effect on basal labeling of PA and PI, stimulated basal PIP and PIP 2 labeling but did not alter microwave stimulated labeling of these lipids. Exposure of synaptosomes to microwave radiation did not alter the chemical concentration of phosphoinositides indicating that the turnover of these lipids was altered. These results suggest that low frequency microwave radiation alter the metabolism of inositol phospholipids by enhancing their turnover and thus may affect the transmembrane signalling in the nerve endings. (orig.)

  20. Unraveling the mysteries of microwave chemistry using silicon carbide reactor technology.

    Science.gov (United States)

    Kappe, C Oliver

    2013-07-16

    In the past few years, the use of microwave energy to heat chemical reactions has become an increasingly popular theme in the scientific community. This nonclassical heating technique has slowly progressed from a laboratory curiosity to an established method commonly used both in academia and in industry. Because of its efficiency, microwave heating dramatically reduces reaction times (from days and hours to minutes and seconds) and improves product purities or material properties among other advantages. Since the early days of microwave chemistry, researchers have observed rate-accelerations and, in some cases, altered product distributions as compared with reactions carried out using classical oil-bath heating. As a result, researchers have speculated that so-called specific or nonthermal microwave effects could be responsible for these differences. Much of the debate has centered on the question of whether the electromagnetic field can exert a direct influence on a chemical transformation outside of the simple macroscopic change in bulk reaction temperature. In 2009, our group developed a relatively simple "trick" that allows us to rapidly evaluate whether an observed effect seen in a microwave-assisted reaction results from a purely thermal phenomenon, or involves specific or nonthermal microwave effects. We use a microwave reaction vessel made from silicon carbide (SiC) ceramic. Because of its high microwave absorptivity, the vessel shields its contents from the electromagnetic field. As a result, we can easily mimic a conventionally heated autoclave experiment inside a microwave reactor under carefully controlled reaction conditions. The switch from an almost microwave transparent glass (Pyrex) to a strongly microwave absorbing SiC reaction vial under otherwise identical reaction conditions (temperature profiles, pressure, stirring speed) then allows us to carefully evaluate the influence of the electromagnetic field on the particular chemical transformation

  1. Structural characteristics of pumpkin pectin extracted by microwave heating.

    Science.gov (United States)

    Yoo, Sang-Ho; Lee, Byeong-Hoo; Lee, Heungsook; Lee, Suyong; Bae, In Young; Lee, Hyeon Gyu; Fishman, Marshall L; Chau, Hoa K; Savary, Brett J; Hotchkiss, Arland T

    2012-11-01

    To improve extraction yield of pumpkin pectin, microwave heating was adopted in this study. Using hot acid extraction, pumpkin pectin yield decreased from 5.7% to 1.0% as pH increased from pH 1.0 to 2.0. At pH 2.5, no pectin was recovered from pumpkin flesh powder. After a pretreatment at pH 1.0 and 25 °C for 1 h, pumpkin powder was microwave-extracted at 120 °C for 3 min resulting in 10.5% of pectin yield. However, premicrowave treatment at 60 °C for 20 min did not improve extraction yield. When microwave heating at 80 °C for 10 min was applied after premicrowave treatment, final pectin yield increased to 11.3%. When pH was adjusted to 2.0, the yield dropped to 7.7% under the same extraction conditions. Molecular shape and properties as well as chemical composition of pumpkin pectin were significantly affected depending on extraction methods. Galacturonic acid content (51% to 58%) of pumpkin pectin was lower than that detected in commercial acid-extracted citrus pectin, while higher content of neutral sugars and acetyl esters existed in pumpkin pectin structure. Molecular weight (M(w) ) and intrinsic viscosity (η(w) ) determined for microwave-extracted pumpkin pectins were substantially lower than acid-extracted pectin, whereas polydispersity was greater. However, microwave-extracted pectin at pH 2.0 had more than 5 times greater M(w) than did the pectin extracted at pH 1.0. The η(w) of microwave-extracted pectin produced at pH 2.0 was almost twice that of other microwave-extracted pectins, which were comparable to that of acid-extracted pectin. These results indicate that extraction yield of pumpkin pectin would be improved by microwave extraction and different pectin structure and properties can be obtained compared to acid extraction. Pumpkin is a promising alternative source for pectin material. Pumpkin pectin has a unique chemical structure and physical properties, presumably providing different functional properties compared to conventional commercial

  2. Tracking Code for Microwave Instability

    International Nuclear Information System (INIS)

    Heifets, S.; SLAC

    2006-01-01

    To study microwave instability the tracking code is developed. For bench marking, results are compared with Oide-Yokoya results [1] for broad-band Q = 1 impedance. Results hint to two possible mechanisms determining the threshold of instability

  3. Tapping mode microwave impedance microscopy

    KAUST Repository

    Lai, K.; Kundhikanjana, W.; Peng, H.; Cui, Y.; Kelly, M. A.; Shen, Z. X.

    2009-01-01

    We report tapping mode microwave impedance imaging based on atomic force microscope platforms. The shielded cantilever probe is critical to localize the tip-sample interaction near the tip apex. The modulated tip-sample impedance can be accurately

  4. Hurricane Satellite (HURSAT) Microwave (MW)

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The Hurricane Satellite (HURSAT) from Microwave (MW) observations of tropical cyclones worldwide data consist of raw satellite observations. The data derive from the...

  5. A Microwave-Assisted Diastereoselective Multicomponent Reaction To Access Dibenzo[c,e]azepinones: Synthesis and Biological Evaluation

    NARCIS (Netherlands)

    Mehta, V.P.; Modha, S.G.; Ruijter, E.; van Hecke, K.; van Meervelt, L.; Pannecouque, C.; Balzarini, J.; Orru, R.V.A.; van der Eycken, E.

    2011-01-01

    An unprecedented microwave-assisted multicomponent strategy has been elaborated for the fast, efficient, and diastereoselective generation of the dibenzo[c,e]azepinone scaffold. The generated compounds were evaluated for their bioactivity. © 2011 American Chemical Society.

  6. Microwave pretreatment of switchgrass for bioethanol production

    Science.gov (United States)

    Keshwani, Deepak Radhakrishin

    Lignocellulosic materials are promising alternative feedstocks for bioethanol production. These materials include agricultural residues, cellulosic waste such as newsprint and office paper, logging residues, and herbaceous and woody crops. However, the recalcitrant nature of lignocellulosic biomass necessitates a pretreatment step to improve the yield of fermentable sugars. The overall goal of this dissertation is to expand the current state of knowledge on microwave-based pretreatment of lignocellulosic biomass. Existing research on bioenergy and value-added applications of switchgrass is reviewed in Chapter 2. Switchgrass is an herbaceous energy crop native to North America and has high biomass productivity, potentially low requirements for agricultural inputs and positive environmental impacts. Based on results from test plots, yields in excess of 20 Mg/ha have been reported. Environmental benefits associated with switchgrass include the potential for carbon sequestration, nutrient recovery from run-off, soil remediation and provision of habitats for grassland birds. Published research on pretreatment of switchgrass reported glucose yields ranging from 70-90% and xylose yields ranging from 70-100% after hydrolysis and ethanol yields ranging from 72-92% after fermentation. Other potential value-added uses of switchgrass include gasification, bio-oil production, newsprint production and fiber reinforcement in thermoplastic composites. Research on microwave-based pretreatment of switchgrass and coastal bermudagrass is presented in Chapter 3. Pretreatments were carried out by immersing the biomass in dilute chemical reagents and exposing the slurry to microwave radiation at 250 watts for residence times ranging from 5 to 20 minutes. Preliminary experiments identified alkalis as suitable chemical reagents for microwave-based pretreatment. An evaluation of different alkalis identified sodium hydroxide as the most effective alkali reagent. Under optimum pretreatment

  7. Cosmic microwave background, where next?

    CERN Multimedia

    CERN. Geneva

    2009-01-01

    Ground-based, balloon-borne and space-based experiments will observe the Cosmic Microwave Background in greater details to address open questions about the origin and the evolution of the Universe. In particular, detailed observations the polarization pattern of the Cosmic Microwave Background radiation have the potential to directly probe physics at the GUT scale and illuminate aspects of the physics of the very early Universe.

  8. Magnon transport through microwave pumping

    OpenAIRE

    Nakata Kouki; Simon Pascal; Loss Daniel

    2015-01-01

    We present a microscopic theory of magnon transport in ferromagnetic insulators (FIs). Using magnon injection through microwave pumping, we propose a way to generate magnon dc currents and show how to enhance their amplitudes in hybrid ferromagnetic insulating junctions. To this end focusing on a single FI, we first revisit microwave pumping at finite (room) temperature from the microscopic viewpoint of magnon injection. Next, we apply it to two kinds of hybrid ferromagnetic insulating juncti...

  9. Microwaves absorption in superconducting materials

    International Nuclear Information System (INIS)

    Biasi, R.S. de; Fernandes, A.A.R.; Pereira, R.F.R.

    1989-01-01

    Microwaves absorption measures in two superconductors ceramics systems, Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O are compared with similars datas obtained in the same band of temperature by a conventional method, mutual inductance. The results suggest that the microwaves absorption can be used as single and non-destructive method for investigating the properties of ceramics superconductors. (C.G.C.) [pt

  10. The use of domestic microwave oven in experimental classes of organic chemistry: salicylaldehyde nitration

    OpenAIRE

    Teixeira, Eurídes Francisco; Santos, Ana Paula Bernardo dos; Bastos, Renato Saldanha; Pinto, Angelo C.; Kümmerle, Arthur Eugen; Coelho, Roberto Rodrigues

    2010-01-01

    The use of microwave in chemistry has known benefits over conventional heating methods, e.g. reduced reaction times, chemical yield improvement and the possibility if reducing or eliminating the use of organic solvents. We describe herein a procedure for the nitration of salicylaldehyde in water using a domestic microwave oven, which can be used as an experiment in the undergraduate chemistry laboratory. The experiment involves safe and rapid preparation and identification of the position iso...

  11. Microwave effects in Drosophila melanogaster

    International Nuclear Information System (INIS)

    Dardalhon, M.; Averbeck, D.; Berteaud, A.J.

    1979-01-01

    Experiments were set up to investigate the effects of open space microwave irradiation of the millimeter (73 GHz) and the centimeter (17 GHz) range in Drosophila melanogaster. We used the wild type strain Paris and the strain delta carrying melanitic tumors in the 3rd larval stage, in the pupae and the adults. The power densities were up to 100mW.cm -2 for 73 GHz and about 60 mW.cm -2 for microwaves at 17 GHz. After 2h exposure to microwaves of 17 GHz or 73 GHz the hatching of the irradiated eggs and their development were normal. In a few cases there was a tendency towards a diminution of the survival of eggs treated at different stages, of larvae treated in the stages 1, 2 and 3 and of treated pupae. However, this was not always statistically significant. The microwave treatment did not induce teratological changes in the adults. A statistical analysis brought about slight diminutions in the incidence and multiplicity of tumors in adult flies. When wild type females were exposed to microwaves of 17 GHz for 16 or 21 h and crossed with untreated males we observed a marked increase in fertility as compared to untreated samples. The viability and tumor incidence in the offspring was not affected. Similar results were obtained when microwaves treated males were crossed with untreated females

  12. Study of federal microwave standards

    Energy Technology Data Exchange (ETDEWEB)

    David, L.

    1980-08-01

    Present and future federal regulatory processes which may impact the permissible levels of microwave radiation emitted by the SPS Microwave Power Transmission (MPTS) were studied. An historical development of US occupational and public microwave standards includes an overview of Western and East European philosophies of environmental protection and neurophysiology which have led to the current widely differing maximum permissible exposure limits to microwaves. The possible convergence of microwave standards is characterized by a lowering of Western exposure levels while Eastern countries consider standard relaxation. A trend toward stricter controls on activities perceived as harmful to public health is under way as is interest in improving the federal regulatory process. Particularly relevant to SPS is the initiation of long-term, low-level microwave exposure programs. Coupled with new developments in instrumentation and dosimetry, the results from chronic exposure program and population exposure studies could be expected within the next five to ten years. Also discussed is the increasing public concern that rf energy is yet another hazardous environmental agent.

  13. Tunable Multiband Microwave Photonic Filters

    Directory of Open Access Journals (Sweden)

    Mable P. Fok

    2017-11-01

    Full Text Available The increasing demand for multifunctional devices, the use of cognitive wireless technology to solve the frequency resource shortage problem, as well as the capabilities and operational flexibility necessary to meet ever-changing environment result in an urgent need of multiband wireless communications. Spectral filter is an essential part of any communication systems, and in the case of multiband wireless communications, tunable multiband RF filters are required for channel selection, noise/interference removal, and RF signal processing. Unfortunately, it is difficult for RF electronics to achieve both tunable and multiband spectral filtering. Recent advancements of microwave photonics have proven itself to be a promising candidate to solve various challenges in RF electronics including spectral filtering, however, the development of multiband microwave photonic filtering still faces lots of difficulties, due to the limited scalability and tunability of existing microwave photonic schemes. In this review paper, we first discuss the challenges that were facing by multiband microwave photonic filter, then we review recent techniques that have been developed to tackle the challenge and lead to promising developments of tunable microwave photonic multiband filters. The successful design and implementation of tunable microwave photonic multiband filter facilitate the vision of dynamic multiband wireless communications and radio frequency signal processing for commercial, defense, and civilian applications.

  14. Microwave heating processes involving carbon materials

    Energy Technology Data Exchange (ETDEWEB)

    Menendez, J.A.; Arenillas, A.; Fidalgo, B.; Fernandez, Y.; Zubizarreta, L.; Calvo, E.G.; Bermudez, J.M. [Instituto Nacional del Carbon, CSIC, Apartado 73, 33080 Oviedo (Spain)

    2010-01-15

    Carbon materials are, in general, very good absorbents of microwaves, i.e., they are easily heated by microwave radiation. This characteristic allows them to be transformed by microwave heating, giving rise to new carbons with tailored properties, to be used as microwave receptors, in order to heat other materials indirectly, or to act as a catalyst and microwave receptor in different heterogeneous reactions. In recent years, the number of processes that combine the use of carbons and microwave heating instead of other methods based on conventional heating has increased. In this paper some of the microwave-assisted processes in which carbon materials are produced, transformed or used in thermal treatments (generally, as microwave absorbers and catalysts) are reviewed and the main achievements of this technique are compared with those obtained by means of conventional (non microwave-assisted) methods in similar conditions. (author)

  15. Controlled Microwave Heating Accelerates Rolling Circle Amplification.

    Science.gov (United States)

    Yoshimura, Takeo; Suzuki, Takamasa; Mineki, Shigeru; Ohuchi, Shokichi

    2015-01-01

    Rolling circle amplification (RCA) generates single-stranded DNAs or RNA, and the diverse applications of this isothermal technique range from the sensitive detection of nucleic acids to analysis of single nucleotide polymorphisms. Microwave chemistry is widely applied to increase reaction rate as well as product yield and purity. The objectives of the present research were to apply microwave heating to RCA and indicate factors that contribute to the microwave selective heating effect. The microwave reaction temperature was strictly controlled using a microwave applicator optimized for enzymatic-scale reactions. Here, we showed that microwave-assisted RCA reactions catalyzed by either of the four thermostable DNA polymerases were accelerated over 4-folds compared with conventional RCA. Furthermore, the temperatures of the individual buffer components were specifically influenced by microwave heating. We concluded that microwave heating accelerated isothermal RCA of DNA because of the differential heating mechanisms of microwaves on the temperatures of reaction components, although the overall reaction temperatures were the same.

  16. Low-pressure plasma enhanced immobilization of chitosan on low-density polyethylene for bio-medical applications

    International Nuclear Information System (INIS)

    Pandiyaraj, K. Navaneetha; Ferraria, Ana Maria; Rego, Ana Maria Botelho do; Deshmukh, Rajendra R.; Su, Pi-Guey; Halleluyah, Jr. Mercy; Halim, Ahmad Sukari

    2015-01-01

    Highlights: • Acrylic acid (AAc) was grafted on LDPE film by in situ plasma polymerization. • Molecules of PEG and chitosan were immobilized on AAc grafted LDPE films. • Surface modified LDPE exhibits excellent hydrophilic property. • Surface modified LDPE resist the adsorption of protein and adhesion of platelets. - Abstract: With the aim of improving blood compatibility of low density polyethylene (LDPE) films, an effective low-pressure plasma technology was employed to functionalize the LDPE film surfaces through in-situ grafting of acrylic acid (AAc). Subsequently, the molecules of poly(ethylene glycol) (PEG) and chitosan (CHI) were immobilized on the surface of grafted LDPE films. The unmodified and modified LDPE films were analyzed using various characterization techniques such as contact angle, atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR) and X-ray photo electron spectroscopy (XPS) to understand the changes in surface properties such as hydrophilicity, surface topography and chemical composition, respectively. Furthermore, LDPE films have been subjected to an ageing process to determine the durability of the plasma assisted surface modification. The blood compatibility of the surface modified LDPE films was confirmed by in vitro tests. It was found that surface modified LDPE films show better hydrophilic behavior compared with the unmodified one. FTIR and XPS results confirm the successful immobilization of CHI on the surface of LDPE films. LDPE films showed marked morphological changes after grafting of AAc, PEG and CHI which were confirmed through AFM imaging. The in vitro blood compatibility tests have clearly demonstrated that CHI immobilized LDPE films exhibit remarkable anti thrombogenic nature compared with other modified films. Surface modified LDPE films through low-pressure plasma technique could be adequate for biomedical implants such as artificial skin substrates, urethral catheters or cardiac stents

  17. Low-pressure plasma enhanced immobilization of chitosan on low-density polyethylene for bio-medical applications

    Energy Technology Data Exchange (ETDEWEB)

    Pandiyaraj, K. Navaneetha, E-mail: dr.knpr@gmail.com [Surface Engineering Laboratory, Department of Physics, Sri Shakthi Institute of Engineering and Technology, L& T by pass, Chinniyam Palayam (post), Coimbatore, 641062 (India); Ferraria, Ana Maria; Rego, Ana Maria Botelho do [Centro de Química- Física Molecular and Institute of Nanoscience and Nanotechnology, Instituto Superior Técnico, University of Lisbon (Portugal); Deshmukh, Rajendra R. [Department of Physics, Institute of Chemical Technology, Matunga, Mumbai 400 019 (India); Su, Pi-Guey [Department of Chemistry, Chinese Culture University, Taipei 111, Taiwan (China); Halleluyah, Jr. Mercy; Halim, Ahmad Sukari [Reconstructive Science Unit, School of Medical Sciences, Health Campus, Universiti Sains Malaysia, 16150 Kubang Kerian, Kelantan (Malaysia)

    2015-02-15

    Highlights: • Acrylic acid (AAc) was grafted on LDPE film by in situ plasma polymerization. • Molecules of PEG and chitosan were immobilized on AAc grafted LDPE films. • Surface modified LDPE exhibits excellent hydrophilic property. • Surface modified LDPE resist the adsorption of protein and adhesion of platelets. - Abstract: With the aim of improving blood compatibility of low density polyethylene (LDPE) films, an effective low-pressure plasma technology was employed to functionalize the LDPE film surfaces through in-situ grafting of acrylic acid (AAc). Subsequently, the molecules of poly(ethylene glycol) (PEG) and chitosan (CHI) were immobilized on the surface of grafted LDPE films. The unmodified and modified LDPE films were analyzed using various characterization techniques such as contact angle, atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR) and X-ray photo electron spectroscopy (XPS) to understand the changes in surface properties such as hydrophilicity, surface topography and chemical composition, respectively. Furthermore, LDPE films have been subjected to an ageing process to determine the durability of the plasma assisted surface modification. The blood compatibility of the surface modified LDPE films was confirmed by in vitro tests. It was found that surface modified LDPE films show better hydrophilic behavior compared with the unmodified one. FTIR and XPS results confirm the successful immobilization of CHI on the surface of LDPE films. LDPE films showed marked morphological changes after grafting of AAc, PEG and CHI which were confirmed through AFM imaging. The in vitro blood compatibility tests have clearly demonstrated that CHI immobilized LDPE films exhibit remarkable anti thrombogenic nature compared with other modified films. Surface modified LDPE films through low-pressure plasma technique could be adequate for biomedical implants such as artificial skin substrates, urethral catheters or cardiac stents

  18. Emergence of traveling wave endothermic reaction in a catalytic fixed bed under microwave heating

    International Nuclear Information System (INIS)

    Gerasev, Alexander P.

    2017-01-01

    This paper presents a new phenomenon in a packed bed catalytic reactor under microwave heating - traveling wave (moving reaction zones) endothermic chemical reaction. A two-phase model is developed to simulate the nonlinear dynamic behavior of the packed bed catalytic reactor with an irreversible first-order chemical reaction. The absorbed microwave power was obtained from Lambert's law. The structure of traveling wave endothermic chemical reaction was explored. The effects of the gas velocity and microwave power on performance of the packed bed catalytic reactor were presented. Finally, the effects of the change in the location of the microwave source at the packed bed reactor was demonstrated. - Highlights: • A new phenomenon - traveling waves of endothermic reaction - is predicted. • The physical and mathematical model of a packed bed catalytic reactor under microwave heating is presented. • The structure of the traveling waves is explored. • The configuration of heating the packed bed reactor via microwave plays a key role.

  19. Rapid immobilization of simulated radioactive soil waste by microwave sintering.

    Science.gov (United States)

    Zhang, Shuai; Shu, Xiaoyan; Chen, Shunzhang; Yang, Huimin; Hou, Chenxi; Mao, Xueli; Chi, Fangting; Song, Mianxin; Lu, Xirui

    2017-09-05

    A rapid and efficient method is particularly necessary in the timely disposal of seriously radioactive contaminated soil. In this paper, a series of simulated radioactive soil waste containing different contents of neodymium oxide (3-25wt.%) has been successfully vitrified by microwave sintering at 1300°C for 30min. The microstructures, morphology, element distribution, density and chemical durability of as obtained vitrified forms have been analyzed. The results show that the amorphous structure, homogeneous element distribution, and regular density improvement are well kept, except slight cracks emerge on the magnified surface for the 25wt.% Nd 2 O 3 -containing sample. Moreover, all the vitrified forms exhibit excellent chemical durability, and the leaching rates of Nd are kept as ∼10 -4 -10 -6 g/(m 2 day) within 42days. This demonstrates a potential application of microwave sintering in radioactive contaminated soil disposal. Copyright © 2017 Elsevier B.V. All rights reserved.

  20. Microwave-assisted solid phase conversion study of Meldrum's acid to ethylenetetracarboxylic dianhydride (C 6O 6)

    Science.gov (United States)

    Taherpour, Avat (Arman)

    2010-01-01

    Utilization of microwave irradiation provides an effective method for fast synthesizing of some important compounds. Microwave-assisted solid phase is an especial class in chemical synthesis. By the use of MW-irradiation on chemicals, sometimes interesting results can be seen. The synthesis of the interesting molecule ethylenetetracarboxylic dianhydride (C 6O 6) was attempted with a few different methods. In this study, the microwave-assisted solid phase conversion of Meldrum's acid to ethylenetetracarboxylic dianhydride was reported. This conversion was characterized by FT-IR, GC/MS and NMR spectroscopy results.