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Sample records for microwave plasma-enhanced chemical

  1. Microwave plasma-enhanced chemical vapour deposition growth of carbon nanostructures

    Directory of Open Access Journals (Sweden)

    Shivan R. Singh

    2010-05-01

    Full Text Available The effect of various input parameters on the production of carbon nanostructures using a simple microwave plasma-enhanced chemical vapour deposition technique has been investigated. The technique utilises a conventional microwave oven as the microwave energy source. The developed apparatus is inexpensive and easy to install and is suitable for use as a carbon nanostructure source for potential laboratory-based research of the bulk properties of carbon nanostructures. A result of this investigation is the reproducibility of specific nanostructures with the variation of input parameters, such as carbon-containing precursor and support gas flow rate. It was shown that the yield and quality of the carbon products is directly controlled by input parameters. Transmission electron microscopy and scanning electron microscopy were used to analyse the carbon products; these were found to be amorphous, nanotubes and onion-like nanostructures.

  2. Preparation of carbon nanotubes with different morphology by microwave plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Duraia, El-Shazly M. [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, 71 Al-Farabi av., 050038 Almaty (Kazakhstan); Institute of Physics and Technology, Ibragimov Street 11, 050032 Almaty (Kazakhstan); Mansurov, Zulkhair [Al-Farabi Kazakh National University, 71 Al-Farabi av., 050038 Almaty (Kazakhstan); Tokmoldin, S.Zh. [Institute of Physics and Technology, Ibragimov Street 11, 050032 Almaty (Kazakhstan)

    2010-04-15

    In this work we present a part of our results about the preparation of carbon nanotube with different morphologies by using microwave plasma enhanced chemical vapour deposition MPECVD. Well aligned, curly, carbon nanosheets, coiled carbon sheets and carbon microcoils have been prepared. We have investigated the effect of the different growth condition parameters such as the growth temperature, pressure and the hydrogen to methane flow rate ratio on the morphology of the carbon nanotubes. The results showed that there is a great dependence of the morphology of carbon nanotubes on these parameters. The yield of the carbon microcoils was high when the growth temperature was 700 C. There is a linear relation between the growth rate and the methane to hydrogen ratio. The effect of the gas pressure on the CNTs was also studied. Our samples were investigated by scanning electron microscope and Raman spectroscopy (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Synthesis of thin films in boron-carbon-nitrogen ternary system by microwave plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Kukreja, Ratandeep Singh

    The Boron Carbon Nitorgen (B-C-N) ternary system includes materials with exceptional properties such as wide band gap, excellent thermal conductivity, high bulk modulus, extreme hardness and transparency in the optical and UV range that find application in most fields ranging from micro-electronics, bio-sensors, and cutting tools to materials for space age technology. Interesting materials that belong to the B-C-N ternary system include Carbon nano-tubes, Boron Carbide, Boron Carbon Nitride (B-CN), hexagonal Boron Nitride ( h-BN), cubic Boron Nitride (c-BN), Diamond and beta Carbon Nitride (beta-C3N4). Synthesis of these materials requires precisely controlled and energetically favorable conditions. Chemical vapor deposition is widely used technique for deposition of thin films of ceramics, metals and metal-organic compounds. Microwave plasma enhanced chemical vapor deposition (MPECVD) is especially interesting because of its ability to deposit materials that are meta-stable under the deposition conditions, for e.g. diamond. In the present study, attempt has been made to synthesize beta-carbon nitride (beta-C3N4) and cubic-Boron Nitride (c-BN) thin films by MPECVD. Also included is the investigation of dependence of residual stress and thermal conductivity of the diamond thin films, deposited by MPECVD, on substrate pre-treatment and deposition temperature. Si incorporated CNx thin films are synthesized and characterized while attempting to deposit beta-C3N4 thin films on Si substrates using Methane (CH4), Nitrogen (N2), and Hydrogen (H2). It is shown that the composition and morphology of Si incorporated CNx thin film can be tailored by controlling the sequence of introduction of the precursor gases in the plasma chamber. Greater than 100mum size hexagonal crystals of N-Si-C are deposited when Nitrogen precursor is introduced first while agglomerates of nano-meter range graphitic needles of C-Si-N are deposited when Carbon precursor is introduced first in the

  4. Direct Fabrication of Carbon Nanotubes STM Tips by Liquid Catalyst-Assisted Microwave Plasma-Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Fa-Kuei Tung

    2009-01-01

    Full Text Available Direct and facile method to make carbon nanotube (CNT tips for scanning tunneling microscopy (STM is presented. Cobalt (Co particles, as catalysts, are electrochemically deposited on the apex of tungsten (W STM tip for CNT growth. It is found that the quantity of Co particles is well controlled by applied DC voltage, concentration of catalyst solution, and deposition time. Using optimum growth condition, CNTs are successfully synthesized on the tip apex by catalyst-assisted microwave-enhanced chemical vapor deposition (CA-MPECVD. A HOPG surface is clearly observed at an atomic scale using the present CNT-STM tip.

  5. Plasma-enhanced microwave solid-state synthesis of cadmium sulfide: reaction mechanism and optical properties.

    Science.gov (United States)

    Du, Ke-zhao; Chaturvedi, Apoorva; Wang, Xing-zhi; Zhao, Yi; Zhang, Ke-ke; Iqbal Bakti Utama, M; Hu, Peng; Jiang, Hui; Xiong, Qi-hua; Kloc, Christian

    2015-08-14

    CdS synthesis by plasma-enhanced microwave physical vapor transport (PMPVT) has been developed in this work. The photoluminescence (PL), absorbance, Raman spectra and the mechanism of CdS crystal growth have been investigated. Furthermore, plasma-enhanced microwave chemical vapour transport (PMCVT) synthesis of CdS with additional chemical transport agents has been explored. In addition, other II-VI chalcogenides were also synthesized by PMPVT.

  6. Intertwisted fibrillar diamond-like carbon films prepared by electron cyclotron resonance microwave plasma enhanced chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    杨武保; 王久丽; 张谷令; 范松华; 刘赤子; 杨思泽

    2003-01-01

    In this paper, the structures, optical and mechanical properties of diamond-like carbon films are studied, which are prepared by a self-fabricated electron cyclotron resonance microwave plasma chemical vapour deposition method at room temperature in the ambient gases of mixed acetylene and nitrogen. The morphology and microstructure of the processed film are characterized by the atomic force microscope image, Raman spectra and middle Fourier transform infrared transmittance spectra, which reveal that there is an intertwisted fibrillar diamond-like structure in the film and the film is mainly composed of sp3 CH, sp3 C-C, sp2 C=C, C=N and C60. The film micro-hardness and bulk modulus are measured by a nano-indenter and the refractive constant and deposition rate are also calculated.

  7. A solid-state nuclear magnetic resonance study of post-plasma reactions in organosilicone microwave plasma-enhanced chemical vapor deposition (PECVD) coatings.

    Science.gov (United States)

    Hall, Colin J; Ponnusamy, Thirunavukkarasu; Murphy, Peter J; Lindberg, Mats; Antzutkin, Oleg N; Griesser, Hans J

    2014-06-11

    Plasma-polymerized organosilicone coatings can be used to impart abrasion resistance and barrier properties to plastic substrates such as polycarbonate. Coating rates suitable for industrial-scale deposition, up to 100 nm/s, can be achieved through the use of microwave plasma-enhanced chemical vapor deposition (PECVD), with optimal process vapors such as tetramethyldisiloxane (TMDSO) and oxygen. However, it has been found that under certain deposition conditions, such coatings are subject to post-plasma changes; crazing or cracking can occur anytime from days to months after deposition. To understand the cause of the crazing and its dependence on processing plasma parameters, the effects of post-plasma reactions on the chemical bonding structure of coatings deposited with varying TMDSO-to-O2 ratios was studied with (29)Si and (13)C solid-state magic angle spinning nuclear magnetic resonance (MAS NMR) using both single-pulse and cross-polarization techniques. The coatings showed complex chemical compositions significantly altered from the parent monomer. (29)Si MAS NMR spectra revealed four main groups of resonance lines, which correspond to four siloxane moieties (i.e., mono (M), di (D), tri (T), and quaternary (Q)) and how they are bound to oxygen. Quantitative measurements showed that the ratio of TMDSO to oxygen could shift the chemical structure of the coating from 39% to 55% in Q-type bonds and from 28% to 16% for D-type bonds. Post-plasma reactions were found to produce changes in relative intensities of (29)Si resonance lines. The NMR data were complemented by Fourier transform infrared (FTIR) spectroscopy. Together, these techniques have shown that the bonding environment of Si is drastically altered by varying the TMDSO-to-O2 ratio during PECVD, and that post-plasma reactions increase the cross-link density of the silicon-oxygen network. It appears that Si-H and Si-OH chemical groups are the most susceptible to post-plasma reactions. Coatings produced at a

  8. Synthesis, structural and field emission properties of multiwall carbon nanotube-graphene-like nanocarbon hybrid films grown by microwave plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chockalingam, Sreekumar, E-mail: sreekuc@nplindia.org [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Bisht, Atul [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Panwar, O.S., E-mail: ospanwar@mail.nplindia.ernet.in [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Kesarwani, A.K. [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Singh, B.P. [Physics and Engineering of Carbon, Materials Physics and Engineering Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Chand, Jagdish [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Singh, V.N. [Electron and Ion Microscopy, Sophisticated and Analytical Instruments, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India)

    2015-04-15

    Multiwall carbon nanotube (MWCNT)-graphene-like nanocarbon hybrid films were directly deposited on nickel substrate without any pre-treatment in a single-step by microwave plasma enhanced chemical vapor deposition (MW PECVD) technique at 600 °C. The effects of hydrogen partial pressure on the growth of MWCNT-graphene-like nanocarbon hybrid films and their structural, morphological and field emission properties were investigated. High resolution scanning electron microscope revealed MWCNT structure. High resolution transmission electron microscope images and Raman spectra revealed graphene-like nanocarbon film. Raman spectra showed 2D, G, D and D + G peaks at approximately 2690, 1590, 1350 and 2930 cm{sup −1}, respectively. The minimum threshold field for electron emission was found to be 3.6 V/μm corresponding to 1 μA/cm{sup 2} current density for the MWCNT-graphene-like nanocarbon hybrid film deposited at 20 Torr pressure whereas the maximum current density of 0.12 mA/cm{sup 2} and field enhancement factor of ∼3356 was obtained for the sample deposited at 5 Torr pressure. - Highlights: • MWCNT-graphene-like nanocarbon hybrid films were synthesized by MWPECVD technique. • Effect of pressure on the structural and field emission properties has been studied. • FESEM revealed MWCNT and HRTEM revealed graphene-like nanocarbon film structure. • Minimum E{sub T} = 3.6 V/μm with β = 3164 has been obtained in the film deposited at 20 Torr. • Maximum J = 0.12 mA/cm{sup 2} with β = 3356 has been obtained in the film deposited at 5 Torr.

  9. Chemical Structure of Carbon Nitride Films Prepared by MW-ECR Plasma Enhanced Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    XUJun,GAOPeng; DINGWan-yu; LIXin; DENGXin-lu; DONGChuang

    2004-01-01

    Amorphous carbon nitride thin films were prepared by plasma-enhanced DC magnetron sputtering using twinned microwave electron cyclotron resonance plasma sources. Chemical structure of deposited films was investigated using X-ray photoelectron spectroscopy and Fourier transtorm infrared spectroscopy. The results indicate that the deposition rate is strongly affected by direct current bias, and the films are mainly composed of a single amorphous carbon nitride phase with N/C ratio close to C3N4, and the bonding is predominantly of C-N type.

  10. Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Matthew T. Cole

    2013-05-01

    Full Text Available A plasma-enhanced chemical vapour deposition reactor has been developed to synthesis horizontally aligned carbon nanotubes. The width of the aligning sheath was modelled based on a collisionless, quasi-neutral, Child’s law ion sheath where these estimates were empirically validated by direct Langmuir probe measurements, thereby confirming the proposed reactors ability to extend the existing sheath fields by up to 7 mm. A 7 mbar growth atmosphere combined with a 25 W plasma permitted the concurrent growth and alignment of carbon nanotubes with electric fields of the order of 0.04 V μm−1 with linear packing densities of up to ~5 × 104 cm−1. These results open up the potential for multi-directional in situ alignment of carbon nanotubes providing one viable route to the fabrication of many novel optoelectronic devices.

  11. Review: Plasma-enhanced chemical vapor deposition of nanocrystalline diamond

    Directory of Open Access Journals (Sweden)

    Katsuyuki Okada

    2007-01-01

    Full Text Available Nanocrystalline diamond films have attracted considerable attention because they have a low coefficient of friction and a low electron emission threshold voltage. In this paper, the author reviews the plasma-enhanced chemical vapor deposition (PE-CVD of nanocrystalline diamond and mainly focuses on the growth of nanocrystalline diamond by low-pressure PE-CVD. Nanocrystalline diamond particles of 200–700 nm diameter have been prepared in a 13.56 MHz low-pressure inductively coupled CH4/CO/H2 plasma. The bonding state of carbon atoms was investigated by ultraviolet-excited Raman spectroscopy. Electron energy loss spectroscopy identified sp2-bonded carbons around the 20–50 nm subgrains of nanocrystalline diamond particles. Plasma diagnostics using a Langmuir probe and the comparison with plasma simulation are also reviewed. The electron energy distribution functions are discussed by considering different inelastic interaction channels between electrons and heavy particles in a molecular CH4/H2 plasma.

  12. Tungsten Deposition on Graphite using Plasma Enhanced Chemical Vapour Deposition.

    Science.gov (United States)

    Sharma, Uttam; Chauhan, Sachin S.; Sharma, Jayshree; Sanyasi, A. K.; Ghosh, J.; Choudhary, K. K.; Ghosh, S. K.

    2016-10-01

    The tokamak concept is the frontrunner for achieving controlled thermonuclear reaction on earth, an environment friendly way to solve future energy crisis. Although much progress has been made in controlling the heated fusion plasmas (temperature ∼ 150 million degrees) in tokamaks, technological issues related to plasma wall interaction topic still need focused attention. In future, reactor grade tokamak operational scenarios, the reactor wall and target plates are expected to experience a heat load of 10 MW/m2 and even more during the unfortunate events of ELM's and disruptions. Tungsten remains a suitable choice for the wall and target plates. It can withstand high temperatures, its ductile to brittle temperature is fairly low and it has low sputtering yield and low fuel retention capabilities. However, it is difficult to machine tungsten and hence usages of tungsten coated surfaces are mostly desirable. To produce tungsten coated graphite tiles for the above-mentioned purpose, a coating reactor has been designed, developed and made operational at the SVITS, Indore. Tungsten coating on graphite has been attempted and successfully carried out by using radio frequency induced plasma enhanced chemical vapour deposition (rf -PECVD) for the first time in India. Tungsten hexa-fluoride has been used as a pre-cursor gas. Energy Dispersive X-ray spectroscopy (EDS) clearly showed the presence of tungsten coating on the graphite samples. This paper presents the details of successful operation and achievement of tungsten coating in the reactor at SVITS.

  13. Preparation and Characterization of DLC Films by Twinned ECR Microwave Plasma Enhanced CVD for Microelectromechanical Systems (MEMS) Applications

    Institute of Scientific and Technical Information of China (English)

    LI Xin; TANG Zhen-an; DENG Xin-lu; SHEN Yu-xiu; DING Hai-tao

    2004-01-01

    Diamond-like carbon (DLC) films have recently been pursued as the protection of MEMS against their friction and wear.Plasma enhanced chemical vapor deposition (PECVD) technique is very attractive to prepare DLC coating for MEMS.This paper describes the preparation of DLC films using twinned electron cyclotron resonance (ECR) microwave PECVD process.Raman spectra confirmed the DLC characteristics of the films.Fourier-transform infrared (FT-IR)characterization indicates the carbon is bonded in the form sp3 and sp2 with hydrogen participating in bonding.The surface roughness of the films is as low as approximately 0.093nm measured with an atomic force microscope.A CERT microtribometer system is employed to obtain information about the scratch resistance,friction properties,and sliding wear resistance of the films.The results show the deposited DLC films have low friction and good scratch/wear resistance properties.

  14. Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems

    Science.gov (United States)

    Cappelli, Mark A.

    1999-01-01

    In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species

  15. Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

    Energy Technology Data Exchange (ETDEWEB)

    Dechana, A. [Program of Physics and General Science, Faculty of Science and Technology, Songkhla Rajabhat University, Songkhla 90000 (Thailand); Thamboon, P. [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Boonyawan, D., E-mail: dheerawan.b@cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2014-10-15

    A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al{sub 2}O{sub 3} layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al{sub 2}O{sub 3} films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.

  16. Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

    Science.gov (United States)

    Dechana, A.; Thamboon, P.; Boonyawan, D.

    2014-10-01

    A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al2O3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al2O3 films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.

  17. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    NARCIS (Netherlands)

    Konakov, S.A.; Krzhizhanovskaya, V.V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics.

  18. Plasma-enhanced Chemical Vapor Deposition of Aluminum Oxide Using Ultrashort Precursor Injection Pulses

    NARCIS (Netherlands)

    Dingemans, G.; M. C. M. van de Sanden,; Kessels, W. M. M.

    2012-01-01

    An alternative plasma-enhanced chemical vapor deposition (PECVD) method is developed and applied for the deposition of high-quality aluminum oxide (AlOx) films. The PECVD method combines a continuous plasma with ultrashort precursor injection pulses. We demonstrate that the modulation of the precurs

  19. The study and the realization of radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique; Etude et realisation de detecteurs de rayonnements a base de films de diamant polycristallin elabores par depot chimique en phase vapeur assiste par plasma micro-onde

    Energy Technology Data Exchange (ETDEWEB)

    Jany, Ch

    1998-10-29

    The aim of this work was to develop radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique. The influence of surface treatments, contact technology and diamond growth parameters on the diamond detectors characteristics was investigated in order to optimise the detector response to alpha particles. The first part of the study focused on the electrical behaviour of as-deposited diamond surface, showing a p type conduction and its influence on the leakage current of the device. A surface preparation process was established in order to reduce the leakage current of the device by surface dehydrogenation using an oxidising step. Several methods to form and treat electrical contacts were also investigated showing that the collection efficiency of the device decreases after contact annealing. In the second part, we reported the influence of the diamond deposition parameters on the characteristics of the detectors. The increase of the deposition temperature and/or methane concentration was shown to lead {eta} to decrease. In contrast, {eta} was found to increase with the micro-wave power. The evolution of the diamond detector characteristics results from the variation in sp{sup 2} phases incorporation and in the crystallography quality of the films. These defects increase the leakage current and reduce the carrier mobility and lifetime. Measurements carried out on detectors with different thicknesses showed that the physical properties varies along the growth direction, improving with the film thickness. Finally, the addition of nitrogen (> 10 ppm) in the gas mixture during diamond deposition was found to strongly reduce the collection efficiency of the detectors. To conclude the study, we fabricated and characterised diamond devices which were used for thermal neutron detection and for the intensity and shape measurement of VUV and soft X-ray pulses. (author)

  20. Simulation of low-temperature, atmospheric-pressure plasma enhanced chemical vapor deposition reactors

    OpenAIRE

    Lorant, Christophe; Descamps, Pierre; De Wilde, Juray; 1st BeLux workshop on “Coating, Materials, surfaces and Interfaces

    2014-01-01

    The simulation of low-temperature, atmospheric-pressure plasma enhanced chemical vapor deposition reactors is challenging due to the coupling of the fluid dynamics, the chemical reactions and the electric field and the stiffness of the resulting mathematical system. The model equations and the rigorous model reduction to reduce the stiffness are addressed in this paper. Considering pure nitrogen plasma, simulations with two configurations are discussed.

  1. The Role of Plasma in Plasma Enhanced Chemical Vapour Deposition of Nanostructure Growth

    Science.gov (United States)

    Hash, David B.; Meyyappan, M.; Teo, Kenneth B. K.; Lacerda, Rodrigo G.; Rupesinghe, Nalin L.

    2004-01-01

    Chemical vapour deposition (CVD) has become the preferred process for high yield growth of carbon nanotubes and nanofibres because of its ability to pattern growth through lithographic positioning of transition metal catalysts on substrates. Many potential applications of nanotubes such as field emitters [1] require not only patterned growth but also vertical alignment. Some degree of ali,ment in thermal CVD processes can be obtained when carbon nanotubes are grown closely together as a result of van der Waals interactions. The ali,onment however is marginal, and the van der Waals prerequisite makes growth of freestanding nanofibres with thermal CVD unrealizable. The application of electric fields as a means of ali,onment has been shown to overcome this limitation [2-5], and highly aligned nanostructures can be grown if electric fields on the order of 0.5 V/microns are employed. Plasma enhanced CVD in various configurations including dc, rf, microwave, inductive and electron cyclotron resonance has been pursued as a means of enabling alignment in the CVD process. However, the sheath fields for the non-dc sources are in general not sufficient for a high degree of ali,pment and an additional dc bias is usually applied to the growth substrate. This begs the question as to the actual role of the plasma. It is clear that the plasma itself is not required for aligned growth as references [3] and [4] employed fields through small applied voltages (3-20 V) across very small electrode spacings (10-100 microns) and thus avoided striking a discharge.

  2. Plasma-Enhanced Chemical Vapor Deposition as a Method for the Deposition of Peptide Nanotubes

    Science.gov (United States)

    2013-09-17

    peptide nanotubes, plasma-enhanced chemical vapor deposition, nano assembly 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT SAR 18...Using physical vapor deposition ( PVD ) well-ordered assemblies of peptide nanotubes (PNTs) composed of dipeptide subunits are obtained on various...for the deposition of thin films (Figure 1b). A. B. Figure 1. (a) Illustration of physical vapor deposition ( PVD ) process of diphenylalanine

  3. Oxygen Barrier Coating Deposited by Novel Plasma-enhanced Chemical Vapor Deposition

    DEFF Research Database (Denmark)

    Jiang, Juan; Benter, M.; Taboryski, Rafael Jozef

    2010-01-01

    We report the use of a novel plasma-enhanced chemical vapor deposition chamber with coaxial electrode geometry for the SiOx deposition. This novel plasma setup exploits the diffusion of electrons through the inner most electrode to the interior samples space as the major energy source. This confi......, and it increased the barrier property of the modified low-density polyethylene, polyethylene terephthalate, and polylactide by 96.48%, 99.69%, and 99.25%, respectively....

  4. Studies on non-oxide coating on carbon fibers using plasma enhanced chemical vapor deposition technique

    Science.gov (United States)

    Patel, R. H.; Sharma, S.; Prajapati, K. K.; Vyas, M. M.; Batra, N. M.

    2016-05-01

    A new way of improving the oxidative behavior of carbon fibers coated with SiC through Plasma Enhanced Chemical Vapor Deposition technique. The complete study includes coating of SiC on glass slab and Stainless steel specimen as a starting test subjects but the major focus was to increase the oxidation temperature of carbon fibers by PECVD technique. This method uses relatively lower substrate temperature and guarantees better stoichiometry than other coating methods and hence the substrate shows higher resistance towards mechanical and thermal stresses along with increase in oxidation temperature.

  5. Synthesis of carbon nanotube array using corona discharge plasma-enhanced chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    A corona discharge plasma-enhanced chemical vapor deposition with the features of atmospheric pressure and low temperature has been developed to synthesize the carbon nanotube array. The array was synthesized from methane and hydrogen mixture in anodic aluminum oxide template channels in that cobalt was electrodeposited at the bottom. The characterization results by the scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy and Raman spectroscopy indicate that the array consists of carbon nanotubes with the diameter of about 40 nm and the length of more than 4 -m, and the carbon nanotubes are mainly restrained within the channels of templates.

  6. Electroluminescence and photoluminescence of conjugated polymer films prepared by plasma enhanced chemical vapor deposition of naphthalene

    CERN Document Server

    Rajabi, Mojtaaba; Firouzjah, Marzieh Abbasi; Hosseini, Seyed Iman; Shokri, Babak

    2012-01-01

    Polymer light-emitting devices were fabricated utilizing plasma polymerized thin films as emissive layers. These conjugated polymer films were prepared by RF Plasma Enhanced Chemical Vapor Deposition (PECVD) using naphthalene as monomer. The effect of different applied powers on the chemical structure and optical properties of the conjugated polymers was investigated. The fabricated devices with structure of ITO/PEDOT:PSS/ plasma polymerized Naphthalene/Alq3/Al showed broadband Electroluminescence (EL) emission peaks with center at 535-550 nm. Using different structural and optical tests, connection between polymers chemical structure and optical properties under different plasma powers has been studied. Fourier transform infrared (FTIR) and Raman spectroscopies confirmed that a conjugated polymer film with a 3-D cross-linked network was developed. By increasing the power, products tended to form as highly cross-linked polymer films. Photoluminescence (PL) spectra of plasma polymers showed different excimerc ...

  7. High quality plasma-enhanced chemical vapor deposited silicon nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Cotler, T.J.; Chapple-Sokol, J. (IBM General Technology Division, Hopewell Junction, NY (United States))

    1993-07-01

    The qualities of plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films can be improved by increasing the deposition temperature. This report compares PECVD silicon nitride films to low pressure chemical vapor deposited (LPCVD) films. The dependence of the film properties on process parameters, specifically power and temperature, are investigated. The stress is shown to shift from tensile to compressive with increasing temperature and power. The deposition rate, uniformity, wet etch rate, index of refraction, composition, stress, hydrogen content, and conformality are considered to evaluate the film properties. Temperature affects the hydrogen content in the films by causing decreased incorporation of N-H containing species whereas the dependence on power is due to changes in the gas-phase precursors. All PECVD film properties, with the exception of conformality, are comparable to those of LPCVD films.

  8. Characterization of Thin Films Deposited with Precursor Ferrocene by Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    YAO Kailun; ZHENG Jianwan; LIU Zuli; JIA Lihui

    2007-01-01

    In this paper,the characterization of thin films,deposited with the precursor ferrocene(FcH)by the plasma enhanced chemical vapour deposition(PECVD)technique,was investigated.The films were measured by Scanning Electronic Microscopy(SEM),Atomic Force Microscopy(AFM),Electron Spectroscopy for Chemical Analysis(ESCA),and superconducting Quantum Interference Device(SQUID).It was observed that the film's layer is homogeneous in thickness and has a dense morphology without cracks.The surface roughness is about 36 nm.From the results of ESCA,it can be inferred that the film mainly contains the compound FeOOH,and carbon is combined with oxygen in different forms under different supply-powers.The hysteresis loops indicate that the film is of soft magnetism.

  9. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    Science.gov (United States)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics. The PECVD technology is inherently multiscale, from macroscale processes in the chemical reactor to atomic-scale surface chemistry. Our macroscale model is based on Navier-Stokes equations for a transient laminar flow of a compressible chemically reacting gas mixture, together with the mass transfer and energy balance equations, Poisson equation for electric potential, electrons and ions balance equations. The chemical kinetics model includes 24 species and 58 reactions: 37 in the gas phase and 21 on the surface. A deposition model consists of three stages: adsorption to the surface, diffusion along the surface and embedding of products into the substrate. A new model has been validated on experimental results obtained with the "Plasmalab System 100" reactor. We present the mathematical model and simulation results investigating the influence of flow rate and source gas proportion on silicon nitride film growth rate and chemical composition.

  10. MICROSTRUCTURE OF SiOx:H FILMS PREPARED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

    Institute of Scientific and Technical Information of China (English)

    MA ZHI-XUN; LIAO XIAN-BO; KONG GUANG-LIN; CHU JUN-HAO

    2000-01-01

    The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (a-SiOx:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique. It is found that a-SiOx :H consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of HSi-SiO2 and HSi-O3. The Raman scattering results exhibit that the frequency of TO-like mode of amorphous silicon red-shifts with decreasing size of silicon-rich region. This is related to the quantum confinement effects, similar to the nanocrystalline silicon.

  11. Deposition of electrochromic tungsten oxide thin films by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Henley, W.B.; Sacks, G.J. [Univ. of South Florida, Tampa, FL (United States). Center of Microelectronics

    1997-03-01

    Use of plasma-enhanced chemical vapor deposition (PECVD) for electrochromic WO{sub 3} film deposition is investigated. Oxygen, hydrogen, and tungsten hexafluoride were used as source gases. Reactant gas flow was investigated to determine the effect on film characteristics. High quality optical films were obtained at deposition rates on the order of 100 {angstrom}/s. Higher deposition rates were attainable but film quality and optical coherence degraded. Atomic emission spectroscopy (AES), was used to provide an in situ assessment of the plasma deposition chemistry. Through AES, it is shown that the hydrogen gas flow is essential to the deposition of the WO{sub 3} film. Oxygen gas flow and tungsten hexafluoride gas flow must be approximately equal for high quality films.

  12. Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

    Science.gov (United States)

    Lupina, G.; Strobel, C.; Dabrowski, J.; Lippert, G.; Kitzmann, J.; Krause, H. M.; Wenger, Ch.; Lukosius, M.; Wolff, A.; Albert, M.; Bartha, J. W.

    2016-05-01

    Plasma-enhanced chemical vapor deposition of thin a-Si:H layers on transferred large area graphene is investigated. Radio frequency (RF, 13.56 MHz) and very high frequency (VHF, 140 MHz) plasma processes are compared. Both methods provide conformal coating of graphene with Si layers as thin as 20 nm without any additional seed layer. The RF plasma process results in amorphization of the graphene layer. In contrast, the VHF process keeps the high crystalline quality of the graphene layer almost intact. Correlation analysis of Raman 2D and G band positions indicates that Si deposition induces reduction of the initial doping in graphene and an increase of compressive strain. Upon rapid thermal annealing, the amorphous Si layer undergoes dehydrogenation and transformation into a polycrystalline film, whereby a high crystalline quality of graphene is preserved.

  13. Characterization of doped hydrogenated nanocrystalline silicon films prepared by plasma enhanced chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Wang Jin-Liang; Wu Er-Xing

    2007-01-01

    The B-and P-doped hydrogenated nanocrystalline silicon films (nc-Si:H) are prepared by plasma-enhanced chemical vapour deposition (PECVD) .The microstructures of doped nc-Si:H films are carefully and systematically char acterized by using high resolution electron microscopy (HREM) ,Raman scattering,x-ray diffraction (XRD) ,Auger electron spectroscopy (AES) ,and resonant nucleus reaction (RNR) .The results show that as the doping concentration of PH3 increases,the average grain size (d) tends to decrease and the crystalline volume percentage (Xc) increases simultaneously.For the B-doped samples,as the doping concentration of B2H6 increases,no obvious change in the value of d is observed,but the value of Xc is found to decrease.This is especially apparent in the case of heavy B2H6 doped samples,where the films change from nanocrystalline to amorphous.

  14. Surface modification of silicon-containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Jin, Yoonyoung; Desta, Yohannes; Goettert, Jost; Lee, G. S.; Ajmera, P. K.

    2005-07-01

    Surface modification of silicon-containing fluorocarbon (SiCF) films achieved by wet chemical treatments and through x-ray irradiation is examined. The SiCF films were prepared by plasma-enhanced chemical vapor deposition, using gas precursors of tetrafluoromethane and disilane. As-deposited SiCF film composition was analyzed by x-ray photoelectron spectroscopy. Surface modification of SiCF films utilizing n-lithiodiaminoethane wet chemical treatment is discussed. Sessile water-drop contact angle changed from 95°+/-2° before treatment to 32°+/-2° after treatment, indicating a change in the film surface characteristics from hydrophobic to hydrophilic. For x-ray irradiation on the SiCF film with a dose of 27.4 kJ/cm3, the contact angle of the sessile water drop changed from 95°+/-2° before radiation to 39°+/-3° after x-ray exposure. The effect of x-ray exposure on chemical bond structure of SiCF films is studied using Fourier transform infrared measurements. Electroless Cu deposition was performed to test the applicability of the surface modified films. The x-ray irradiation method offers a unique advantage in making possible surface modification in a localized area of high-aspect-ratio microstructures. Fabrication of a Ti-membrane x-ray mask is introduced here for selective surface modification using x-ray irradiation.

  15. Plasma-enhanced chemical vapor deposited silicon oxynitride films for optical waveguide bridges for use in mechanical sensors

    DEFF Research Database (Denmark)

    Storgaard-Larsen, Torben; Leistiko, Otto

    1997-01-01

    In this paper the influence of RF power, ammonia flow, annealing temperature, and annealing time on the optical and mechanical properties of plasma-enhanced chemically vapor deposited silicon oxynitride films, is presented. A low refractive index (1.47 to 1.48) film having tensile stress has been...

  16. Plasma Enhanced Chemical Vapor Deposition Nanocrystalline Tungsten Carbide Thin Film and Its Electro-catalytic Activity

    Institute of Scientific and Technical Information of China (English)

    Huajun ZHENG; Chunan MA; Jianguo HUANG; Guohua LI

    2005-01-01

    Nanocrystalline tungsten carbide thin films were fabricated on graphite substrates by plasma enhanced chemical vapor deposition (PECVD) at H2 and Ar atmosphere, using WF6 and CH4 as precursors. The crystal phase, structure and chemical components of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive spectrometer (EDS), respectively. The results show that the film prepared at CH4/WF6concentration ratio of 20 and at 800℃ is composed of spherical particles with a diameter of 20~35 nm. Electrochemical investigations show that the electrochemical real surface area of electrode of the film is large, and the electrode of the film exhibits higher electro-catalytic activity in the reaction of methanol oxidation. The designated constant current of the film catalyst is 123.6 mA/cm2 in the mixture solution of H2SO4 and CH3OH at the concentration of 0.5 and 2.0 mol/L at 70℃, and the designated constant potential is only 0.306 V (vs SCE).

  17. Control of interface nanoscale structure created by plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Peri, Someswara R; Akgun, Bulent; Satija, Sushil K; Jiang, Hao; Enlow, Jesse; Bunning, Timothy J; Foster, Mark D

    2011-09-01

    Tailoring the structure of films deposited by plasma-enhanced chemical vapor deposition (PECVD) to specific applications requires a depth-resolved understanding of how the interface structures in such films are impacted by variations in deposition parameters such as feed position and plasma power. Analysis of complementary X-ray and neutron reflectivity (XR, NR) data provide a rich picture of changes in structure with feed position and plasma power, with those changes resolved on the nanoscale. For plasma-polymerized octafluorocyclobutane (PP-OFCB) films, a region of distinct chemical composition and lower cross-link density is found at the substrate interface for the range of processing conditions studied and a surface layer of lower cross-link density also appears when plasma power exceeds 40 W. Varying the distance of the feed from the plasma impacts the degree of cross-linking in the film center, thickness of the surface layer, and thickness of the transition region at the substrate. Deposition at the highest power, 65 W, both enhances cross-linking and creates loose fragments with fluorine content higher than the average. The thickness of the low cross-link density region at the air interface plays an important role in determining the width of the interface built with a layer subsequently deposited atop the first.

  18. Nanostructured silicon carbon thin films grown by plasma enhanced chemical vapour deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Coscia, U. [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); CNISM Unita' di Napoli, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Ambrosone, G., E-mail: ambrosone@na.infn.it [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); SPIN-CNR, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Basa, D.K. [Department of Physics, Utkal University, Bhubaneswar 751004 (India); Rigato, V. [INFN Laboratori Nazionali Legnaro, 35020 Legnaro (Padova) (Italy); Ferrero, S.; Virga, A. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino (Italy)

    2013-09-30

    Nanostructured silicon carbon thin films, composed of Si nanocrystallites embedded in hydrogenated amorphous silicon carbon matrix, have been prepared by varying rf power in ultra high vacuum plasma enhanced chemical vapour deposition system using silane and methane gas mixtures diluted in hydrogen. In this paper we have studied the compositional, structural and electrical properties of these films as a function of rf power. It is shown that with increasing rf power the atomic densities of carbon and hydrogen increase while the atomic density of silicon decreases, resulting in a reduction in the mass density. Further, it is demonstrated that carbon is incorporated into amorphous matrix and it is mainly bonded to silicon. The study has also revealed that the crystalline volume fraction decreases with increase in rf power and that the films deposited with low rf power have a size distribution of large and small crystallites while the films deposited with relatively high power have only small crystallites. Finally, the enhanced transport properties of the nanostructured silicon carbon films, as compared to amorphous counterpart, have been attributed to the presence of Si nanocrystallites. - Highlights: • The mass density of silicon carbon films decreases from 2.3 to 2 g/cm{sup 3}. • Carbon is incorporated in the amorphous phase and it is mainly bonded to silicon. • Nanostructured silicon carbon films are deposited at rf power > 40 W. • Si nanocrystallites in amorphous silicon carbon enhance the electrical properties.

  19. Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Santra, T. S.; Liu, C. H.; Bhattacharyya, T. K.; Patel, P.; Barik, T. K.

    2010-06-01

    Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of CC, CH, SiC, and SiH bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio ID/IG. Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

  20. Electrical transport properties of graphene nanowalls grown at low temperature using plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Zhao, Rong; Ahktar, Meysam; Alruqi, Adel; Dharmasena, Ruchira; Jasinski, Jacek B.; Thantirige, Rukshan M.; Sumanasekera, Gamini U.

    2017-05-01

    In this work, we report the electrical transport properties of uniform and vertically oriented graphene (graphene nanowalls) directly synthesized on multiple substrates including glass, Si/SiO2 wafers, and copper foils using radio-frequency plasma enhanced chemical vapor deposition (PECVD) with methane (CH4) as the precursor at relatively low temperatures. The temperature for optimum growth was established with the aid of transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy. This approach offers means for low-cost graphene nanowalls growth on an arbitrary substrate with the added advantage of transfer-free device fabrication. The temperature dependence of the electrical transport properties (resistivity and thermopower) were studied in the temperature range, 30-300 K and analyzed with a combination of 2D-variable range hopping (VRH) and thermally activated (TA) conduction mechanisms. An anomalous temperature dependence of the thermopower was observed for all the samples and explained with a combination of a diffusion term having a linear temperature dependence plus a term with an inverse temperature dependence.

  1. FTIR Characterization of Fluorine Doped Silicon Dioxide Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    WANG Peng-Fei; DING Shi-Jin; ZHANG Wei; ZHANG Jian-Yun; WANGJi-Tao; WEI William Lee

    2000-01-01

    Fluorine doped silicon dioxide (SiOF) thin films have been prepared by plasma enhanced chemical vapor depo sition. The Fourier transform infrared spectrometry (FTIR) spectra of SiOF films are deliberated to reveal the structure change of SiO2 and the mechanism of dielectric constant reduction after doping fluorine. When F is doped in SiO2 films, the Si-O stretching absorption peak will have a blue-shift due to increase of the partial charge of the O atom. The FTIR spectra indicate that some Si-OH components in the thin film can be removed after doping fluorine. These changes reduce the ionic and orientational polarization, and result in the reduction in dielectric constant of the film. According to Gaussian fitting, it is found that the Si-F2 bonds will appear in the SiOF film with increase of the fluorine content. The Si-F2 structures are liable to react with water, and cause the same increase of absorbed moisture in the film.

  2. Chain Assemblies from Nanoparticles Synthesized by Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition: The Computational View.

    Science.gov (United States)

    Mishin, Maxim V; Zamotin, Kirill Y; Protopopova, Vera S; Alexandrov, Sergey E

    2015-12-01

    This article refers to the computational study of nanoparticle self-organization on the solid-state substrate surface with consideration of the experimental results, when nanoparticles were synthesised during atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD). The experimental study of silicon dioxide nanoparticle synthesis by AP-PECVD demonstrated that all deposit volume consists of tangled chains of nanoparticles. In certain cases, micron-sized fractals are formed from tangled chains due to deposit rearrangement. This work is focused on the study of tangled chain formation only. In order to reveal their formation mechanism, a physico-mathematical model was developed. The suggested model was based on the motion equation solution for charged and neutral nanoparticles in the potential fields with the use of the empirical interaction potentials. In addition, the computational simulation was carried out based on the suggested model. As a result, the influence of such experimental parameters as deposition duration, particle charge, gas flow velocity, and angle of gas flow was found. It was demonstrated that electrical charges carried by nanoparticles from the discharge area are not responsible for the formation of tangled chains from nanoparticles, whereas nanoparticle kinetic energy plays a crucial role in deposit morphology and density. The computational results were consistent with experimental results.

  3. Conformal encapsulation of three-dimensional, bioresorbable polymeric scaffolds using plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Hawker, Morgan J; Pegalajar-Jurado, Adoracion; Fisher, Ellen R

    2014-10-21

    Bioresorbable polymers such as poly(ε-caprolactone) (PCL) have a multitude of potential biomaterial applications such as controlled-release drug delivery and regenerative tissue engineering. For such biological applications, the fabrication of porous three-dimensional bioresorbable materials with tunable surface chemistry is critical to maximize their surface-to-volume ratio, mimic the extracellular matrix, and increase drug-loading capacity. Here, two different fluorocarbon (FC) precursors (octofluoropropane (C3F8) and hexafluoropropylene oxide (HFPO)) were used to deposit FC films on PCL scaffolds using plasma-enhanced chemical vapor deposition (PECVD). These two coating systems were chosen with the intent of modifying the scaffold surfaces to be bio-nonreactive while maintaining desirable bulk properties of the scaffold. X-ray photoelectron spectroscopy showed high-CF2 content films were deposited on both the exterior and interior of PCL scaffolds and that deposition behavior is PECVD system specific. Scanning electron microscopy data confirmed that FC film deposition yielded conformal rather than blanket coatings as the porous scaffold structure was maintained after plasma treatment. Treated scaffolds seeded with human dermal fibroblasts (HDF) demonstrate that the cells do not attach after 72 h and that the scaffolds are noncytotoxic to HDF. This work demonstrates conformal FC coatings can be deposited on 3D polymeric scaffolds using PECVD to fabricate 3D bio-nonreactive materials.

  4. Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Broas, Mikael, E-mail: mikael.broas@aalto.fi; Vuorinen, Vesa [Department of Electrical Engineering and Automation, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sippola, Perttu; Pyymaki Perros, Alexander; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sajavaara, Timo [Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40014 Jyväskylä (Finland); Paulasto-Kröckel, Mervi [Department of Electrical Engineering and Automation, Aalto University. P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland)

    2016-07-15

    Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N{sub 2}:H{sub 2} plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the AlN films. Furthermore, dinitrogen triple bonds were identified with infrared spectroscopy in the films. The triple bonds broke after annealing at 1000 °C for 1 h which likely caused enhanced hydrolysis of the films. The nanostructure of the films was identified to be amorphous in the as-deposited state and to become nanocrystalline after 1 h of annealing at 1000 °C.

  5. Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    LU Wan-bing; YU Wei; WU Li-ping; CUI Shuang-kui; FU Guang-sheng

    2006-01-01

    Hydrogenated nanocrystalline silicon carbide (SiC) thin films were deposited on the single-crystal silicon substrate using the helicon wave plasma enhanced chemical vapor deposition (HW-PECVD) technique. The influences of magnetic field and hydrogen dilution ratio on the structures of SiC thin film were investigated with the atomic force microscopy (AFM), the Fourier transform infrared absorption (FTIR) and the transmission electron microscopy (TEM). The results indicate that the high plasma activity of the helicon wave mode proves to be a key factor to grow crystalline SiC thin films at a relative low substrate temperature. Also, the decrease in the grain sizes from the level of microcrystalline to that of nanocrystalline can be achieved by increasing the hydrogen dilution ratios. Transmission electron microscopy measurements reveal that the size of most nanocrystals in the film deposited under the higher hydrogen dilution ratios is smaller than the doubled Bohr radius of 3C-SiC (approximately 5.4 nm), and the light emission measurements also show a strong blue photoluminescence at the room temperature, which is considered to be caused by the quantum confinement effect of small-sized SiC nanocrystals.

  6. Growth of nanocrystalline silicon carbide thin films by plasma enhanced chemical vapor deposition

    CERN Document Server

    Lee, S W; Moon, J Y; Ahn, S S; Kim, H Y; Shin, D H

    1999-01-01

    Nanocrystalline silicon carbide thin films have been deposited by plasma enhanced chemical vapor deposition (PECVD) using SiH sub 4 , CH sub 4 , and H sub 2 gases. The effects of gas mixing ratio (CH sub 4 /SiH sub 4), deposition temperature, and RF power on the film properties have been studied. The growth rate, refractive index, and the optical energy gap depends critically on the growth conditions. The dependence of the growth rate on the gas flow ratio is quite different from the results obtained for the growth using C sub 2 H sub 2 gas instead of CH sub 4. As the deposition temperature is increased from 300 .deg. C to 600 .deg. C, hydrogen and carbon content in the film decreases and as a result the optical gap decreases. At the deposition temperature of 600 .deg. C and RF power of 150 W, the film structure si nanocrystalline, As the result of the nanocrystallization the dark conductivity is greatly improved. The nanocrystalline silicon carbide thin films may be used for large area optoelectronic devices...

  7. Boron nitride nanowalls: low-temperature plasma-enhanced chemical vapor deposition synthesis and optical properties

    Science.gov (United States)

    Merenkov, Ivan S.; Kosinova, Marina L.; Maximovskii, Eugene A.

    2017-05-01

    Hexagonal boron nitride (h-BN) nanowalls (BNNWs) were synthesized by plasma-enhanced chemical vapor deposition (PECVD) from a borazine (B3N3H6) and ammonia (NH3) gas mixture at a low temperature range of 400 °C-600 °C on GaAs(100) substrates. The effect of the synthesis temperature on the structure and surface morphology of h-BN films was investigated. The length and thickness of the h-BN nanowalls were in the ranges of 50-200 nm and 15-30 nm, respectively. Transmission electron microscope images showed the obtained BNNWs were composed of layered non-equiaxed h-BN nanocrystallites 5-10 nm in size. The parallel-aligned h-BN layers as an interfacial layer were observed between the film and GaAs(100) substrate. BNNWs demonstrate strong blue light emission, high transparency (>90%) both in visible and infrared spectral regions and are promising for optical applications. The present results enable a convenient growth of BNNWs at low temperatures.

  8. Wetting behaviour of carbon nitride nanostructures grown by plasma enhanced chemical vapour deposition technique

    Science.gov (United States)

    Ahmad Kamal, Shafarina Azlinda; Ritikos, Richard; Abdul Rahman, Saadah

    2015-02-01

    Tuning the wettability of various coating materials by simply controlling the deposition parameters is essential for various specific applications. In this work, carbon nitride (CNx) films were deposited on silicon (1 1 1) substrates using radio-frequency plasma enhanced chemical vapour deposition employing parallel plate electrode configuration. Effects of varying the electrode distance (DE) on the films' structure and bonding properties were investigated using Field emission scanning electron microscopy, Atomic force microscopy, Fourier transform infrared and X-ray photoemission spectroscopy. The wettability of the films was analyzed using water contact angle measurements. At high DE, the CNx films' surface was smooth and uniform. This changed into fibrous nanostructures when DE was decreased. Surface roughness of the films increased with this morphological transformation. Nitrogen incorporation increased with decrease in DE which manifested the increase in both relative intensities of Cdbnd N to Cdbnd C and Nsbnd H to Osbnd H bonds. sp2-C to sp3-C ratio increased as DE decreased due to greater deformation of sp2 bonded carbon at lower DE. The films' characteristics changed from hydrophilic to super-hydrophobic with the decrease in DE. Roughness ratio, surface porosity and surface energy calculated from contact angle measurements were strongly dependent on the morphology, surface roughness and bonding properties of the films.

  9. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Li, Dong-ling; Feng, Xiao-fei; Wen, Zhi-yu; Shang, Zheng-guo; She, Yin

    2016-07-01

    Stress controllable silicon nitride (SiNx) films deposited by plasma enhanced chemical vapor deposition (PECVD) are reported. Low stress SiNx films were deposited in both high frequency (HF) mode and dual frequency (HF/LF) mode. By optimizing process parameters, stress free (-0.27 MPa) SiNx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited SiNx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit (IC), micro-electro-mechanical systems (MEMS) and bio-MEMS.

  10. Si-nanocrystal-based LEDs fabricated by ion implantation and plasma-enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Peralvarez, M; Carreras, Josep; Navarro-Urrios, D; Lebour, Y; Garrido, B [MIND, IN2UB, Department of Electronics, University of Barcelona, C/Marti i Franques 1, PL2, E-08028 Barcelona (Spain); Barreto, J; DomInguez, C [IMB-CNM, CSIC, Bellaterra, E-08193 Barcelona (Spain); Morales, A, E-mail: mperalvarez@el.ub.e [INAOE, Electronics Department, Apartado 51, Puebla 72000 (Mexico)

    2009-10-07

    An in-depth study of the physical and electrical properties of Si-nanocrystal-based MOSLEDs is presented. The active layers were fabricated with different concentrations of Si by both ion implantation and plasma-enhanced chemical vapour deposition. Devices fabricated by ion implantation exhibit a combination of direct current and field-effect luminescence under a bipolar pulsed excitation. The onset of the emission decreases with the Si excess from 6 to 3 V. The direct current emission is attributed to impact ionization and is associated with the reasonably high current levels observed in current-voltage measurements. This behaviour is in good agreement with transmission electron microscopy images that revealed a continuous and uniform Si nanocrystal distribution. The emission power efficiency is relatively low, {approx}10{sup -3}%, and the emission intensity exhibits fast degradation rates, as revealed from accelerated ageing experiments. Devices fabricated by chemical deposition only exhibit field-effect luminescence, whose onset decreases with the Si excess from 20 to 6 V. The absence of the continuous emission is explained by the observation of a 5 nm region free of nanocrystals, which strongly reduces the direct current through the gate. The main benefit of having this nanocrystal-free region is that tunnelling current flow assisted by nanocrystals is blocked by the SiO{sub 2} stack so that power consumption is strongly reduced, which in return increases the device power efficiency up to 0.1%. In addition, the accelerated ageing studies reveal a 50% degradation rate reduction as compared to implanted structures.

  11. Modelling and optimization of film thickness variation for plasma enhanced chemical vapour deposition processes

    Science.gov (United States)

    Waddell, Ewan; Gibson, Des; Lin, Li; Fu, Xiuhua

    2011-09-01

    This paper describes a method for modelling film thickness variation across the deposition area within plasma enhanced chemical vapour deposition (PECVD) processes. The model enables identification and optimization of film thickness uniformity sensitivities to electrode configuration, temperature, deposition system design and gas flow distribution. PECVD deposition utilizes a co-planar 300mm diameter electrodes with separate RF power matching to each electrode. The system has capability to adjust electrode separation and electrode temperature as parameters to optimize uniformity. Vacuum is achieved using dry pumping with real time control of butterfly valve position for active pressure control. Comparison between theory and experiment is provided for PECVD of diamond-like-carbon (DLC) deposition onto flat and curved substrate geometries. The process utilizes butane reactive feedstock with an argon carrier gas. Radiofrequency plasma is used. Deposited film thickness sensitivities to electrode geometry, plasma power density, pressure and gas flow distribution are demonstrated. Use of modelling to optimise film thickness uniformity is demonstrated. Results show DLC uniformity of 0.30% over a 200 mm flat zone diameter within overall electrode diameter of 300mm. Thickness uniformity of 0.75% is demonstrated over a 200mm diameter for a non-conformal substrate geometry. Use of the modelling method for PECVD using metal-organic chemical vapour deposition (MOCVD) feedstock is demonstrated, specifically for deposition of silica films using metal-organic tetraethoxy-silane. Excellent agreement between experimental and theory is demonstrated for conformal and non-conformal geometries. The model is used to explore scalability of PECVD processes and trade-off against film thickness uniformity. Application to MEMS, optical coatings and thin film photovoltaics is discussed.

  12. Plasma enhanced chemical vapor deposition of iron doped thin dioxide films, their structure and photowetting effect

    Energy Technology Data Exchange (ETDEWEB)

    Sobczyk-Guzenda, A., E-mail: anna.sobczyk-guzenda@p.lodz.pl [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz (Poland); Owczarek, S.; Szymanowski, H. [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz (Poland); Wypych-Puszkarz, A. [Department of Molecular Physics, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz (Poland); Volesky, L. [Technical University of Liberec, Institute for Nanomaterials, Advanced Technologies and Innovation, Studentska 1402/2, 461 17 Liberec 1 (Czech Republic); Gazicki-Lipman, M. [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz (Poland)

    2015-08-31

    Radio frequency plasma enhanced chemical vapor deposition (RF PECVD) technique was applied for the purpose of deposition of iron doped titanium dioxide coatings from a gaseous mixture of oxygen with titanium (IV) chloride and iron (0) pentacarbonyl. Glass slides and silicon wafers were used as substrates. The coatings morphology was investigated using scanning electron microscopy (SEM) and atomic force microscopy (AFM). Their elemental and chemical composition was studied with the help of X-ray energy dispersive spectroscopy (EDS) and Fourier transform infrared (FTIR) spectroscopy, respectively, while their phase composition was analyzed with the Raman spectroscopy. For the determination of the film optical properties, ultraviolet (UV–Vis) spectroscopy techniques were used. Iron content in the range of 0.07 to 11.5 at.% was found in the coatings. FTIR studies showed that iron was built-in in the structure of TiO{sub 2} matrix. Surface roughness, assessed with the SEM and AFM techniques, increases with an increasing content of this element. Trace amounts of iron resulted in a lowering of an absorption threshold of the films and their optical gap, but the tendency was reversed for high concentrations of that element. The effect of iron doping on UV photowettability of the films was also studied and, for coatings containing up to 5% of iron, it was stronger than that exhibited by pure TiO{sub 2}. - Highlights: • Iron doped TiO{sub 2} films were deposited with the PECVD method. • Differences of surface morphology of the films with different iron content were shown. • Depending on the iron content, the film structure is either amorphous or crystalline. • A parabolic character of the optical gap dependence on the concentration of iron was observed. • Up to a concentration of 5% of iron, doped TiO{sub 2} films exhibit a super-hydrophilic effect.

  13. Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

    Science.gov (United States)

    Liu, A. Y.; Sun, C.; Markevich, V. P.; Peaker, A. R.; Murphy, J. D.; Macdonald, D.

    2016-11-01

    It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250 °C to 900 °C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change in the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700 °C. The gettering process is found to become reaction-limited at higher temperatures.

  14. Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bartlome, Richard, E-mail: richard.bartlome@alumni.ethz.ch; De Wolf, Stefaan; Demaurex, Bénédicte; Ballif, Christophe [Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladière 71b, 2000 Neuchâtel (Switzerland); Amanatides, Eleftherios; Mataras, Dimitrios [University of Patras, Department of Chemical Engineering, Plasma Technology Laboratory, P.O. Box 1407, 26504 Patras (Greece)

    2015-05-28

    We clarify the difference between the SiH{sub 4} consumption efficiency η and the SiH{sub 4} depletion fraction D, as measured in the pumping line and the actual reactor of an industrial plasma-enhanced chemical vapor deposition system. In the absence of significant polysilane and powder formation, η is proportional to the film growth rate. Above a certain powder formation threshold, any additional amount of SiH{sub 4} consumed translates into increased powder formation rather than into a faster growing Si film. In order to discuss a zero-dimensional analytical model and a two-dimensional numerical model, we measure η as a function of the radio frequency (RF) power density coupled into the plasma, the total gas flow rate, the input SiH{sub 4} concentration, and the reactor pressure. The adjunction of a small trimethylboron flow rate increases η and reduces the formation of powder, while the adjunction of a small disilane flow rate decreases η and favors the formation of powder. Unlike η, D is a location-dependent quantity. It is related to the SiH{sub 4} concentration in the plasma c{sub p}, and to the phase of the growing Si film, whether the substrate is glass or a c-Si wafer. In order to investigate transient effects due to the RF matching, the precoating of reactor walls, or the introduction of a purifier in the gas line, we measure the gas residence time and acquire time-resolved SiH{sub 4} density measurements throughout the ignition and the termination of a plasma.

  15. Growth and characterization of nanodiamond layers prepared using the plasma-enhanced linear antennas microwave CVD system

    Energy Technology Data Exchange (ETDEWEB)

    Fendrych, Frantisek; Taylor, Andrew; Peksa, Ladislav; Kratochvilova, Irena; Kluiber, Zdenek; Fekete, Ladislav [Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i, Na Slovance 2, CZ-18221 Prague 8 (Czech Republic); Vlcek, Jan [Department of Physics and Measurement, Institute of Chemical Technology Prague, Technicka 5, CZ-16628 Prague 6 (Czech Republic); Rezacova, Vladimira; Petrak, Vaclav [Faculty of Biomedical Engineering, Czech Technical University, Sitna 3105, CZ-27201 Kladno 2 (Czech Republic); Liehr, Michael [Leybold Optics Dresden GmbH, Zur Wetterwarte 50, D-01109 Dresden (Germany); Nesladek, Milos, E-mail: fendrych@fzu.c [IMOMEC division, IMEC, Institute for Materials Research, University Hasselt, Wetenschapspark 1, B-3590 Diepenbeek (Belgium)

    2010-09-22

    Industrial applications of plasma-enhanced chemical vapour deposition (CVD) diamond grown on large area substrates, 3D shapes, at low substrate temperatures and on standard engineering substrate materials require novel plasma concepts. Based on the pioneering work of the group at AIST in Japan, the high-density coaxial delivery type of plasmas has been explored (Tsugawa et al 2006 New Diamond Front. Carbon Technol. 16 337-46). However, an important challenge is to obtain commercially interesting growth rates at very low substrate temperatures. In this work we introduce the concept of novel linear antenna sources, designed at Leybold Optics Dresden, using high-frequency pulsed MW discharge with a high plasma density. This type of pulse discharges leads to the preparation of nanocrystalline diamond (NCD) thin films, compared with ultra-NCD thin films prepared in (Tsugawa et al 2006 New Diamond Front. Carbon Technol. 16 337-46). We present optical emission spectroscopy data for the CH{sub 4}-CO{sub 2}-H{sub 2} gas chemistry and we discuss the basic properties of the NCD films grown.

  16. Evaluation of chemical and structural properties of germanium-carbon coatings deposited by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, Hossein, E-mail: h.jamali@mut-es.ac.ir; Mozafarinia, Reza; Eshaghi, Akbar

    2015-10-15

    Germanium-carbon coatings were deposited on silicon and glass substrates by plasma enhanced chemical vapor deposition (PECVD) using three different flow ratios of GeH{sub 4} and CH{sub 4} precursors. Elemental analysis, structural evaluation and microscopic investigation of coatings were performed using laser-induced breakdown spectroscopy (LIBS), Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. Based on the results, the coatings exhibited a homogeneous and dense structure free of pores with a very good adhesion to substrate. The structural evaluation revealed that the germanium-carbon coatings were a kind of a Ge-rich composite material containing the amorphous and crystalline germanium and amorphous carbon with the mixture of Ge–Ge, Ge–C, C–C, Ge–H and C–H bonds. The result suggested that the amorphisation of the coatings could be increased with raising CH{sub 4}:GeH{sub 4} flow rate ratio and subsequently increasing C amount incorporated into the coating. - Highlights: • Germanium-carbon coatings were prepared by PECVD technique. • The germanium-carbon coatings were a kind of composite material. • The amorphisation of the coatings were increased with raising CH{sub 4}:GeH{sub 4} flow ratio.

  17. The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Hao [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States)]. E-mail: hao.jiang@wpafb.af.mil; Hong Lianggou [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States); Venkatasubramanian, N. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Grant, John T. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Eyink, Kurt [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Wiacek, Kevin [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Fries-Carr, Sandra [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Enlow, Jesse [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Bunning, Timothy J. [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States)

    2007-02-26

    Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant ({epsilon} {sub r}) and dielectric loss (tan {delta}) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F {sub b}) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F{sub b} of 610 V/{mu}m, an {epsilon} {sub r} of 3.07, and a tan {delta} of 7.0 x 10{sup -3} at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss.

  18. Electrochromic Devices Deposited on Low-Temperature Plastics by Plasma-Enhanced Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Robbins, Joshua; Seman, Michael

    2005-09-20

    Electrochromic windows have been identified by the Basic energy Sciences Advisory committee as an important technology for the reduction of energy spent on heating and cooling in residential and commercial buildings. Electrochromic devices have the ability to reversibly alter their optical properties in response to a small electric field. By blocking ultraviolet and infrared radiation, while modulating the incoming visible radiation, electrochromics could reduce energy consumption by several Quads per year. This amounts to several percent of the total annual national energy expenditures. The purpose of this project was to demonstrate proof of concept for using plasma-enhanced chemical vapor deposition (PECVD) for depositing all five layers necessary for full electrochromic devices, as an alternative to sputtering techniques. The overall goal is to produce electrochromic devices on flexible polymer substrates using PECVD to significantly reduce the cost of the final product. We have successfully deposited all of the films necessary for a complete electrochromic devices using PECVD. The electrochromic layer, WO3, displayed excellent change in visible transmission with good switching times. The storage layer, V2O5, exhibited a high storage capacity and good clear state transmission. The electrolyte, Ta2O5, was shown to functional with good electrical resistivity to go along with the ability to transfer Li ions. There were issues with leakage over larger areas, which can be address with further process development. We developed a process to deposit ZnO:Ga with a sheet resistance of < 50 W/sq. with > 90% transmission. Although we were not able to deposit on polymers due to the temperatures required in combination with the inverted position of our substrates. Two types of full devices were produced. Devices with Ta2O5 were shown to be functional using small aluminum dots as the top contact. The polymer electrolyte devices were shown to have a clear state transmission of

  19. Optical and electrical characteristics of plasma enhanced chemical vapor deposition boron carbonitride thin films derived from N-trimethylborazine precursor

    Energy Technology Data Exchange (ETDEWEB)

    Sulyaeva, Veronica S., E-mail: veronica@niic.nsc.ru [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kosinova, Marina L.; Rumyantsev, Yurii M.; Kuznetsov, Fedor A. [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kesler, Valerii G. [Laboratory of Physical Principles for Integrated Microelectronics, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Kirienko, Viktor V. [Laboratory of Nonequilibrium Semiconductors Systems, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation)

    2014-05-02

    Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition using N-trimethylborazine as a precursor. The films were deposited on Si(100) and fused silica substrates. The grown films were characterized by ellipsometry, Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, spectrophotometry, capacitance–voltage and current–voltage measurements. The deposition parameters, such as substrate temperature (373–973 K) and gas phase composition were varied. Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers in the range of 300–2000 nm, the transmittance as high as 93% has been achieved. BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9 depending on the synthesis conditions. - Highlights: • Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition. • N-trimethylborazine was used as a precursor. • Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers (93%). • BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9.

  20. Plasma-enhanced chemical vapor deposition of graphene on copper substrates

    Directory of Open Access Journals (Sweden)

    Nicolas Woehrl

    2014-04-01

    Full Text Available A plasma enhanced vapor deposition process is used to synthesize graphene from a hydrogen/methane gas mixture on copper samples. The graphene samples were transferred onto SiO2 substrates and characterized by Raman spectroscopic mapping and atomic force microscope topographical mapping. Analysis of the Raman bands shows that the deposited graphene is clearly SLG and that the sheets are deposited on large areas of several mm2. The defect density in the graphene sheets is calculated using Raman measurements and the influence of the process pressure on the defect density is measured. Furthermore the origin of these defects is discussed with respect to the process parameters and hence the plasma environment.

  1. Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiOx layers for application in solar cells

    Science.gov (United States)

    Klingsporn, M.; Kirner, S.; Villringer, C.; Abou-Ras, D.; Costina, I.; Lehmann, M.; Stannowski, B.

    2016-06-01

    Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.

  2. Cell proliferation on modified DLC thin films prepared by plasma enhanced chemical vapor deposition.

    Science.gov (United States)

    Stoica, Adrian; Manakhov, Anton; Polčák, Josef; Ondračka, Pavel; Buršíková, Vilma; Zajíčková, Renata; Medalová, Jiřina; Zajíčková, Lenka

    2015-06-12

    Recently, diamondlike carbon (DLC) thin films have gained interest for biological applications, such as hip and dental prostheses or heart valves and coronary stents, thanks to their high strength and stability. However, the biocompatibility of the DLC is still questionable due to its low wettability and possible mechanical failure (delamination). In this work, DLC:N:O and DLC: SiOx thin films were comparatively investigated with respect to cell proliferation. Thin DLC films with an addition of N, O, and Si were prepared by plasma enhanced CVD from mixtures of methane, hydrogen, and hexamethyldisiloxane. The films were optically characterized by infrared spectroscopy and ellipsometry in UV-visible spectrum. The thickness and the optical properties were obtained from the ellipsometric measurements. Atomic composition of the films was determined by Rutherford backscattering spectroscopy combined with elastic recoil detection analysis and by x-ray photoelectron spectroscopy. The mechanical properties of the films were studied by depth sensing indentation technique. The number of cells that proliferate on the surface of the prepared DLC films and on control culture dishes were compared and correlated with the properties of as-deposited and aged films. The authors found that the level of cell proliferation on the coated dishes was high, comparable to the untreated (control) samples. The prepared DLC films were stable and no decrease of the biocompatibility was observed for the samples aged at ambient conditions.

  3. Influence of growth conditions on microstructure and defects in diamond coatings grown by microwave plasma enhanced CVD

    Indian Academy of Sciences (India)

    Kalyan Sundar Pal; Sandip Bysakh; Awadesh Kumar Mallik; Nandadulal Dandapat; Someswar Datta; Bichitra K Guha

    2015-06-01

    Diamond coatings were grown on SiO2/Si substrate under various process conditions by microwave plasma chemical vapour deposition (MPCVD) using CH4/H2 gas mixture. In this paper, we present a microstructural study to elucidate on the growth mechanism and evolution of defects, viz., strain, dislocations, stacking faults, twins and non-diamond impurities in diamond coatings grown under different process conditions. Transmission electron microscopy (TEM), X-ray diffraction (XRD) and Raman spectroscopy were used to characterize the diamond coatings. It has been shown that our new approach of prolonged substrate pre-treatment under hydrogen plasma yielded a new growth sequence that the SiO2 layer on the Si substrate was first reduced to yield Si layer of ∼150 nm thickness before diamond was allowed to grow under CH4–H2 plasma, created subsequently. It has also been shown that Si and O as impurity from the substrate hinders the initial diamond growth to yield non-diamond phases. It is being suggested that the crystal defects like twins, stacking faults, dislocations in the diamond grains and dislocations in the intermediate Si layer are generated due to the development of non-uniform stresses during diamond growth at high temperature.

  4. Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors

    Science.gov (United States)

    Choi, S. W.; Lucovsky, G.; Bachmann, K. J.

    1992-01-01

    Thin homoepitaxial films of gallium phosphide (GaP) have been grown by remote plasma enhanced chemical vapor deposition utilizing in situ-generated phosphine precursors. The GaP forming reaction is kinetically controlled with an activation energy of 0.65 eV. The increase of the growth rate with increasing radio frequency (RF) power between 20 and 100 W is due to the combined effects of increasingly complete excitation and the spatial extension of the glow discharge toward the substrate; however, the saturation of the growth rate at even higher RF power indicates the saturation of the generation rate of phosphine precursors at this condition. Slight interdiffusion of P into Si and Si into GaP is indicated from GaP/Si heterostructures grown under similar conditions as the GaP homojunctions.

  5. Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors

    Science.gov (United States)

    Choi, S. W.; Lucovsky, G.; Bachmann, Klaus J.

    1993-01-01

    Thin homoepitaxial films of gallium phosphide (GaP) were grown by remote plasma enhanced chemical vapor deposition utilizing in situ generated phosphine precursors. The GaP forming reaction is kinetically controlled with an activation energy of 0.65 eV. The increase of the growth rate with increasing radio frequency (rf) power between 20 and 100 W is due to the combined effects of increasingly complete excitation and the spatial extension of the glow discharge toward the substrate, however, the saturation of the growth rate at even higher rf power indicates the saturation of the generation rate of phosphine precursors at this condition. Slight interdiffusion of P into Si and Si into GaP is indicated from GaP/Si heterostructures grown under similar conditions as the GaP homojunctions.

  6. Highly efficient shrinkage of inverted-pyramid silicon nanopores by plasma-enhanced chemical vapor deposition technology

    Science.gov (United States)

    Wang, Yifan; Deng, Tao; Chen, Qi; Liang, Feng; Liu, Zewen

    2016-06-01

    Solid-state nanopore-based analysis systems are currently one of the most attractive and promising platforms in sensing fields. This work presents a highly efficient method to shrink inverted-pyramid silicon nanopores using plasma-enhanced chemical vapor deposition (PECVD) technology by the deposition of SiN x onto the surface of the nanopore. The contraction of the inverted-pyramid silicon nanopores when subjected to the PECVD process has been modeled and carefully analyzed, and the modeling data are in good agreement with the experimental results within a specific PECVD shrinkage period (˜0-600 s). Silicon nanopores within a 50-400 nm size range contract to sub-10 nm dimensions. Additionally, the inner structure of the nanopores after the PECVD process has been analyzed by focused ion beam cutting process. The results show an inner structure morphology change from inverted-pyramid to hourglass, which may enhance the spatial resolution of sensing devices.

  7. Microstructural modification of nc-Si/SiO{sub x} films during plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, X.W. [State Key Laboratory of Silicon Materials Science, Zhejiang University, Hangzhou 310027 (China)

    2005-07-01

    Nanocrystalline-silicon embedded silicon oxide films are prepared by plasma-enhanced chemical vapor deposition (PECVD) at 300 C without post-heat treatment. Measurements of XPS, IR, XRD, and HREM are performed. Microstructural modifications are found occurring throughout the film deposition. The silica network with a high oxide state is suggested to be formed directly under the abduction of the former deposited layer, rather than processing repeatedly from the original low-oxide state of silica. Nanocrystalline silicon particles with a size of 6-10 nm are embedded in the SiO{sub x} film matrix, indicating the potential application in Si-based optoelectronic integrity. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Highly efficient shrinkage of inverted-pyramid silicon nanopores by plasma-enhanced chemical vapor deposition technology.

    Science.gov (United States)

    Wang, Yifan; Deng, Tao; Chen, Qi; Liang, Feng; Liu, Zewen

    2016-06-24

    Solid-state nanopore-based analysis systems are currently one of the most attractive and promising platforms in sensing fields. This work presents a highly efficient method to shrink inverted-pyramid silicon nanopores using plasma-enhanced chemical vapor deposition (PECVD) technology by the deposition of SiN x onto the surface of the nanopore. The contraction of the inverted-pyramid silicon nanopores when subjected to the PECVD process has been modeled and carefully analyzed, and the modeling data are in good agreement with the experimental results within a specific PECVD shrinkage period (∼0-600 s). Silicon nanopores within a 50-400 nm size range contract to sub-10 nm dimensions. Additionally, the inner structure of the nanopores after the PECVD process has been analyzed by focused ion beam cutting process. The results show an inner structure morphology change from inverted-pyramid to hourglass, which may enhance the spatial resolution of sensing devices.

  9. Room-Temperature Ferromagnetic ZnMnO Thin Films Synthesized by Plasma Enhanced Chemical Vapour Deposition Method

    Institute of Scientific and Technical Information of China (English)

    LIN Ying-Bin; ZHANG Feng-Ming; DU You-Wei; HUANG Zhi-Gao; ZHENG Jian-Guo; LU Zhi-Hai; ZOU Wen-Qin; LU Zhong-Lin; XU Jian-Ping; JI Jian-Ti; LIU Xing-Chong; WANG Jian-Feng; LV Li-Ya

    2007-01-01

    Room-temperature ferromagnetic Mn-doped ZnO films are grown on Si (001) substrates by plasma enhanced chemical vapour deposition (PECVD). X-ray diffraction measurements reveal that the Zn1-xMnxO films have the single-phase wurtzite structure. X-ray photoelectron spectroscopy indicates the existence of Mn2+ ions in Mndoped ZnO films. Furthermore, the decreasing additional Raman peak with increasing Mn-doping is considered to relate to the substitution of Mn ions for the Zn ions in ZnO lattice. Superconducting quantum interference device (SQUID) measurements demonstrate that Mn-doped ZnO films have ferromagnetic behaviour at room temperature.

  10. High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by high- pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality μc-Si:H films have been achieved with a high deposition rate of 7.8 /s at a high pressure. The Voc of 560 mV and the FF of 0.70 have been achieved for a single-junction μc-Si:H p-i-n solar cell at a deposition rate of 7.8 /s.

  11. Method of plasma enhanced chemical vapor deposition of diamond using methanol-based solutions

    Science.gov (United States)

    Tzeng, Yonhua (Inventor)

    2009-01-01

    Briefly described, methods of forming diamond are described. A representative method, among others, includes: providing a substrate in a reaction chamber in a non-magnetic-field microwave plasma system; introducing, in the absence of a gas stream, a liquid precursor substantially free of water and containing methanol and at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one, into an inlet of the reaction chamber; vaporizing the liquid precursor; and subjecting the vaporized precursor, in the absence of a carrier gas and in the absence in a reactive gas, to a plasma under conditions effective to disassociate the vaporized precursor and promote diamond growth on the substrate in a pressure range from about 70 to 130 Torr.

  12. Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

    2017-03-01

    Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

  13. Plasma-enhanced chemical vapor deposition of low- loss as-grown germanosilicate layers for optical waveguides

    Science.gov (United States)

    Ay, Feridun; Agan, Sedat; Aydinli, Atilla

    2004-08-01

    We report on systematic growth and characterization of low-loss germanosilicate layers for use in optical waveguides. Plasma enhanced chemical vapor deposition (PECVD) technique was used to grow the films using silane, germane and nitrous oxide as precursor gases. Chemical composition was monitored by Fourier transform infrared (FTIR) spectroscopy. N-H bond concentration of the films decreased from 0.43x1022 cm-3 down to below 0.06x1022 cm-3, by a factor of seven as the GeH4 flow rate increased from 0 to 70 sccm. A simultaneous decrease of O-H related bonds was also observed by a factor of 10 in the same germane flow range. The measured TE rate increased from 5 to 50 sccm, respectively. In contrast, the propagation loss values for TE polarization at λ=632.8 nm were found to increase from are 0.20 +/- 0.02 to 6.46 +/- 0.04 dB/cm as the germane flow rate increased from 5 to 50 sccm, respectively. In contrast, the propagation loss values for TE polarization at λ=1550 nm were found to decrease from 0.32 +/- 0.03 down to 0.14 +/- 0.06 dB/cm for the same samples leading to the lowest values reported so far in the literature, eliminating the need for high temperature annealing as is usually done for these materials to be used in waveguide devices.

  14. Direct fabrication of 3D graphene on nanoporous anodic alumina by plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Zhan, Hualin; Garrett, David J.; Apollo, Nicholas V.; Ganesan, Kumaravelu; Lau, Desmond; Prawer, Steven; Cervenka, Jiri

    2016-01-01

    High surface area electrode materials are of interest for a wide range of potential applications such as super-capacitors and electrochemical cells. This paper describes a fabrication method of three-dimensional (3D) graphene conformally coated on nanoporous insulating substrate with uniform nanopore size. 3D graphene films were formed by controlled graphitization of diamond-like amorphous carbon precursor films, deposited by plasma-enhanced chemical vapour deposition (PECVD). Plasma-assisted graphitization was found to produce better quality graphene than a simple thermal graphitization process. The resulting 3D graphene/amorphous carbon/alumina structure has a very high surface area, good electrical conductivity and exhibits excellent chemically stability, providing a good material platform for electrochemical applications. Consequently very large electrochemical capacitance values, as high as 2.1 mF for a sample of 10 mm3, were achieved. The electrochemical capacitance of the material exhibits a dependence on bias voltage, a phenomenon observed by other groups when studying graphene quantum capacitance. The plasma-assisted graphitization, which dominates the graphitization process, is analyzed and discussed in detail.

  15. Plasma-enhanced chemical vapor deposition of ortho-carborane: structural insights and interaction with Cu overlayers.

    Science.gov (United States)

    James, Robinson; Pasquale, Frank L; Kelber, Jeffry A

    2013-09-01

    X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS) are used to investigate the chemical and electronic structure of boron carbide films deposited from ortho-carborane precursors using plasma-enhanced chemical vapor deposition (PECVD), and the reactivity of PECVD films toward sputter-deposited Cu overlayers. The XPS data provide clear evidence of enhanced ortho-carborane reactivity with the substrate, and of extra-icosahedral boron and carbon species; these results differ from results for films formed by condensation and electron beam induced cross-linking of ortho-carborane (EBIC films). The UPS data show that the valence band maximum for PECVD films is ∼1.5 eV closer to the Fermi level than for EBIC films. The XPS data also indicate that PECVD films are resistant to thermally-stimulated diffusion of Cu at temperatures up to 1000 K in UHV, in direct contrast to recently reported results, but important for applications in neutron detection and in microelectronics.

  16. SiC-Si[sub 3]N[sub 4] composite coatings produced by plasma-enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gerretsen, J. (Centre for Technical Ceramics, Netherlands Organization for Applied Scientific Research, Eindhoven (Netherlands)); Kirchner, G. (Centre for Technical Ceramics, Netherlands Organization for Applied Scientific Research, Eindhoven (Netherlands)); Kelly, T. (Irish Science and Technology Agency, Dublin (Ireland)); Mernagh, V. (Irish Science and Technology Agency, Dublin (Ireland)); Koekoek, R. (Tempress, Hoogeveen (Netherlands)); McDonnell, L. (Tekscan Ltd., Cork (Ireland))

    1993-10-08

    Silicon carbonitride coatings have been produced by plasma-enhanced chemical vapour deposition (CVD) on AISI 440C steel in a hot-wall reactor at 250 C from a mixture of SiH[sub 4], N[sub 2]-NH[sub 3] and C[sub 2]H[sub 4], and analysed by electron probe microanalysis and Rutherford backscattering spectroscopy-elastic recoil detection. Coatings with different ratios of silicon carbide to silicon nitride and silicon suband superstoichiometries have been deposited. Stoichiometric coatings show a maximum in their mechanical properties. Depending on the SiC-to-Si[sub 3]N[sub 4] ratio, the Knoop hardness values vary between 1500 and 2800 HK[sub 0.025]. Internal stress is low at a level of 100-300 MPa. The pinhole density is less than 2 cm[sup -2]. The fracture toughness as determined from indention tests is 4 MPa m[sup 1/2]. Linear polarization testing results show excellent protection of the substrate material against chemically aggressive media as compared with conventional CVD. (orig.)

  17. Influence of ignition condition on the growth of silicon thin films using plasma enhanced chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Zhang Hai-Long; Liu Feng-Zhen; Zhu Mei-Fang; Liu Jin-Long

    2012-01-01

    The influences of the plasma ignition condition in plasma enhanced chemical vapour deposition (PECVD) on the interfaces and the microstructures of hydrogenated microcrystalline Si (μc-Si:H) thin films are investigated.The plasma ignition condition is modified by varying the ratio of SiH4 to H2 (RH).For plasma ignited with a constant gas ratio,the time-resolved optical emission spectroscopy presents a low value of the emission intensity ratio of Hα to SiH(IHα/IsiH) at the initial stage,which leads to a thick amorphous incubation layer.For the ignition condition with a profiling RH,the higher IHα/IsiH values are realized.By optimizing the RH modulation,a uniform crystallinity along the growth direction and a denser μc-Si:H film can be obtained.However,an excessively high IHα/IsiH* may damage the interface properties,which is indicated by capacitance-voltage (C-V) measurements.Well controlling the ignition condition is critically important for the applications of Si thin films.

  18. Deposition and characterization of diamond-like nanocomposite coatings grown by plasma enhanced chemical vapour deposition over different substrate materials

    Indian Academy of Sciences (India)

    Awadesh Kr Mallik; Nanadadulal Dandapat; Prajit Ghosh; Utpal Ganguly; Sukhendu Jana; Sayan Das; Kaustav Guha; Garfield Rebello; Samir Kumar Lahiri; Someswar Datta

    2013-04-01

    Diamond-like nanocomposite (DLN) coatings have been deposited over different substrates used for biomedical applications by plasma-enhanced chemical vapour deposition (PECVD). DLN has an interconnecting network of amorphous hydrogenated carbon and quartz-like oxygenated silicon. Raman spectroscopy, Fourier transform–infra red (FT–IR) spectroscopy, transmission electron microscopy (TEM) and X-ray diffraction (XRD) have been used for structural characterization. Typical DLN growth rate is about 1 m/h, measured by stylus profilometer. Due to the presence of quartz-like Si:O in the structure, it is found to have very good adhesive property with all the substrates. The adhesion strength found to be as high as 0.6 N on SS 316 L steel substrates by scratch testing method. The Young’s modulus and hardness have found to be 132 GPa and 14.4 GPa, respectively. DLN coatings have wear factor in the order of 1 × 10-7 mm3/N-m. This coating has found to be compatible with all important biomedical substrate materials and has successfully been deposited over Co–Cr alloy based knee implant of complex shape.

  19. Bamboo and herringbone shaped carbon nanotubes and carbon nanofibres synthesized in direct current-plasma enhanced chemical vapour deposition.

    Science.gov (United States)

    Zhang, Lu; Chen, Li; Wells, Torquil; El-Gomati, Mohamed

    2009-07-01

    Carbon nanotubes with different structures were catalytically synthesized on Ni coated SiO2/Si substrate in a Direct Current Plasma Enhanced Chemical Vapour Deposition system, in which C2H2 acted as the carbon source and NH3 as the etchant gas. A Scanning Electron Microscope study showed that carbon nanotubes were all vertically aligned with respect to the substrate, with diameters ranging from 10 nm to 200 nm. Different sizes of Ni catalyst particles were observed on the tips of carbon nanotubes. Transmission Electron Microscopy was used to study the morphology of the grown tubes and the results obtained show that the diameters and structures of these carbon nanotubes were closely correlated to the sizes and structures of the Ni nanoparticles. Two main structures namely bamboo shaped carbon nanotubes and herringbone shaped carbon nanofibres were found on the same sample. It is suggested that by controlling the pre-growth condition, desired structure of carbon nanotubes or carbon nanofibres could be produced for practical applications.

  20. Catalytic Carbon Submicron Fabrication Using Home-Built Very-High Frequency Plasma Enhanced Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Sukirno

    2008-09-01

    Full Text Available In this research, carbon nanotubes (CNT fabrication is attempted by using existing home-made Plasma Enhanced Chemical Vapour Deposition (PECVD system. The fabrication is a catalytic growth process, which Fe catalyst thin film is grown on the Silicon substrate by using dc-Unbalanced Magnetron Sputtering method. By using methane (CH4 as the source of carbon and diluted silane (SiH4 in hydrogen as the source of hydrogen with 10:1 ratio, CNT fabrications have been attempted by using Very High Frequency PECVD (VHF-PECVD method. The fabrication processes are done at relatively low temperature, 250oC, but with higher operated plasma frequency, 70 MHz. Recently, it is also been attempted a fabrication process with only single gas source, but using one of the modification of the VHF-PECVD system, which is by adding hot-wire component. The attempt was done in higher growth temperature, 400oC. Morphological characterizations, by using Scanning Electron Micrograph (SEM and Scanning Probe Microscopy (SPM, as well as the composition characterization, by using Energy Dispersion Analysis by X-Ray (EDAX, show convincing results that there are some signatures of CNT present.

  1. Plasma-enhanced chemical vapor deposition of low-loss SiON optical waveguides at 15-microm wavelength.

    Science.gov (United States)

    Bruno, F; Guidice, M D; Recca, R; Testa, F

    1991-11-01

    Good optical-quality SiON layers deposited upon a SiO(2) buffer layer placed upon silicon wafers have been obtained by using plasma-enhanced chemical vapor deposition from SiH(4), NH(3), and N(2)O. Optical planar waveguides with a thickness of 5 microm and a refractive index of 1.470 have been deposited and investigated in the wavelength region of 1.3-1.6 microm. Three absorption bands at 1.40, 1.48, and 1.54 microm have been detected and interpreted as Si-OH, N-H, and Si-H vibrational modes, respectively. Absorption losses of 3.8 dB/cm at 1.4 microm and 3.2 dB/cm at 1.51 microm have been measured. A mild annealing at approximately 800 degrees C completely removes the band at 1.40 microm, whereas strong reduction of absorption at 1.51 microm requires 3 h of annealing at 1100 degrees C. As a result, propagation losses of 0.36 to 0.54 dB/cm have been measured at 1.54-microm wavelength.

  2. Osteoconductive Potential of Barrier NanoSiO2 PLGA Membranes Functionalized by Plasma Enhanced Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Antonia Terriza

    2014-01-01

    Full Text Available The possibility of tailoring membrane surfaces with osteoconductive potential, in particular in biodegradable devices, to create modified biomaterials that stimulate osteoblast response should make them more suitable for clinical use, hopefully enhancing bone regeneration. Bioactive inorganic materials, such as silica, have been suggested to improve the bioactivity of synthetic biopolymers. An in vitro study on HOB human osteoblasts was performed to assess biocompatibility and bioactivity of SiO2 functionalized poly(lactide-co-glycolide (PLGA membranes, prior to clinical use. A 15 nm SiO2 layer was deposited by plasma enhanced chemical vapour deposition (PECVD, onto a resorbable PLGA membrane. Samples were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, and infrared spectroscopy (FT-IR. HOB cells were seeded on sterilized test surfaces where cell morphology, spreading, actin cytoskeletal organization, and focal adhesion expression were assessed. As proved by the FT-IR analysis of samples, the deposition by PECVD of the SiO2 onto the PLGA membrane did not alter the composition and other characteristics of the organic membrane. A temporal and spatial reorganization of cytoskeleton and focal adhesions and morphological changes in response to SiO2 nanolayer were identified in our model. The novedous SiO2 deposition method is compatible with the standard sterilization protocols and reveals as a valuable tool to increase bioactivity of resorbable PLGA membranes.

  3. A new perspective on structural and morphological properties of carbon nanotubes synthesized by Plasma Enhanced Chemical Vapor Deposition technique

    Science.gov (United States)

    Salar Elahi, A.; Agah, K. Mikaili; Ghoranneviss, M.

    CNTs were produced on a silicon wafer by Plasma Enhanced Chemical Vapor Deposition (PECVD) using acetylene as a carbon source, cobalt as a catalyst and ammonia as a reactive gas. The DC-sputtering system was used to prepare cobalt thin films on Si substrates. A series of experiments was carried out to investigate the effects of reaction temperature and deposition time on the synthesis of the nanotubes. The deposition time was selected as 15 and 25 min for all growth temperatures. Energy Dispersive X-ray (EDX) measurements were used to investigate the elemental composition of the Co nanocatalyst deposited on Si substrates. Atomic Force Microscopy (AFM) was used to characterize the surface topography of the Co nanocatalyst deposited on Si substrates. The as-grown CNTs were characterized under Field Emission Scanning Electron Microscopy (FESEM) to study the morphological properties of CNTs. Also, the grown CNTs have been investigated by High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy. The results demonstrated that increasing the temperature leads to increasing the diameter of CNTs.

  4. Highly Uniform Wafer-scale Synthesis of α-MoOsub>3sub> by Plasma Enhanced Chemical Vapor Deposition.

    Science.gov (United States)

    Kim, HyeongU; Son, Juhyun; Kulkarni, Atul; Ahn, Chisung; Kim, Ki Seok; Shin, Dongjoo; Yeom, Geun; Kim, Taesung

    2017-03-20

    Molybdenum oxide (MoOsub>3sub>) has gained immense attention because of its high electron mobility, wide band gap, and excellent optical and catalytic properties. However, the synthesis of uniform and large-area MoOsub>3sub> is challenging. Here, we report the synthesis of wafer-scale α-MoO3 by plasma oxidation of Mo-deposited on Si/SiOsub>2sub>. Mo was oxidized by Osub>2sub> plasma in a plasma enhanced chemical vapor deposition (PECVD) system at 150 °C. Mo was oxidized by Osub>2sub> plasma in a PECVD system at 150 °C. It was found that the synthesized α-MoOsub>3sub> had a highly uniform crystalline structure. For the as-synthesized α-MoOsub>3sub> sensor, we observed a current change when the relative humidity was increased from 11% to 95%. The sensor was exposed to different humidity levels with fast recovery time of about 8 s. Hence this feasibility study shows that MoOsub>3sub> synthesized at low temperature can be utilized for the gas sensing applications by adopting flexible device technology.

  5. Osteoconductive Potential of Barrier NanoSiO2 PLGA Membranes Functionalized by Plasma Enhanced Chemical Vapour Deposition

    Science.gov (United States)

    Terriza, Antonia; Vilches-Pérez, Jose I.; de la Orden, Emilio; Yubero, Francisco; Gonzalez-Caballero, Juan L.; González-Elipe, Agustin R.; Vilches, José; Salido, Mercedes

    2014-01-01

    The possibility of tailoring membrane surfaces with osteoconductive potential, in particular in biodegradable devices, to create modified biomaterials that stimulate osteoblast response should make them more suitable for clinical use, hopefully enhancing bone regeneration. Bioactive inorganic materials, such as silica, have been suggested to improve the bioactivity of synthetic biopolymers. An in vitro study on HOB human osteoblasts was performed to assess biocompatibility and bioactivity of SiO2 functionalized poly(lactide-co-glycolide) (PLGA) membranes, prior to clinical use. A 15 nm SiO2 layer was deposited by plasma enhanced chemical vapour deposition (PECVD), onto a resorbable PLGA membrane. Samples were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, and infrared spectroscopy (FT-IR). HOB cells were seeded on sterilized test surfaces where cell morphology, spreading, actin cytoskeletal organization, and focal adhesion expression were assessed. As proved by the FT-IR analysis of samples, the deposition by PECVD of the SiO2 onto the PLGA membrane did not alter the composition and other characteristics of the organic membrane. A temporal and spatial reorganization of cytoskeleton and focal adhesions and morphological changes in response to SiO2 nanolayer were identified in our model. The novedous SiO2 deposition method is compatible with the standard sterilization protocols and reveals as a valuable tool to increase bioactivity of resorbable PLGA membranes. PMID:24883304

  6. Plasma-enhanced Chemical Vapordeposition SiO2 Film after Ion Implantation Induces Quantum Well Intermixing

    Institute of Scientific and Technical Information of China (English)

    PENG Jucun; WU Boying; CHEN Jie; ZHAO Jie; WANG Yongchen

    2006-01-01

    A method of QWI ( quantum well intermixing) realizing through plasma-enhanced chemical vapordepositiom (PECVD) SiO2 film following ion implantation was investigated. PECVD 200 nm SiO2 film after 160 keV phosphorus(P) ion implantation was performed to induce InP-based multiple-quantum-well (MQW) laser structural intermixing, annealing process was carried out at 780 ℃ for 30 seconds under N2 flue, the blue shift ofphotoluminescence (PL) peak related to implanted dose: 1 × 1011 , 1 × 1012, 1 × 1013 ,3 × 1013 , 7 × 1013 ion/ cm2 is 22 nm, 65 nm, 104 nm, 109 nm, 101 nm, respectively. Under the same conditions, by comparing the blue shift of PL peak with P ion implantation only, slight differentiation between the two methods was observed, and results reveal that the defects in the implanting layers generated by ion implantation are much more than those in SiO2 film. So, the blue shift results mainly from ion implantation. However , SiO2 film also may promote the quantum well intermixing.

  7. Selective adhesion of intestinal epithelial cells on patterned films with amine functionalities formed by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kyung Seop; Choi, Changrok; Kim, Soo Heon; Choi, Kun oh [Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Jeong Min [Department of Molecular Biology and Institute of Nanosensor and Biotechnology, BK21 Graduate Program for RNA Biology, Dankook University, Yongin 448-701 (Korea, Republic of); Kim, Hong Ja [Department of Internal Medicine, Dankook University College of Medicine, Cheonan 330-715 (Korea, Republic of); Yeo, Sanghak [R and D Center, ELBIO Incorporation, 426-5 Gasan-dong Geumchun-gu, Seoul (Korea, Republic of); Park, Heonyong [Department of Molecular Biology and Institute of Nanosensor and Biotechnology, BK21 Graduate Program for RNA Biology, Dankook University, Yongin 448-701 (Korea, Republic of); Jung, Donggeun, E-mail: djung@skku.ac.kr [Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2010-11-01

    Control of cell adhesion to surfaces is important to develop analytical tools in the areas of biomedical engineering. To control cell adhesiveness of the surface, we constructed a variety of plasma polymerized hexamethyldisiloxane (PPHMDSO) thin films deposited at the plasma power range of 10-100 W by plasma enhanced chemical vapor deposition (PECVD). The PPHMDSO film that was formed at 10 W was revealed to be resistant to cell adhesion. The resistance to cell adhesion is closely related to physicochemical properties of the film. Atomic force microscopic data show an increase in surface roughness from 0.52 nm to 0.74 nm with increasing plasma power. From Fourier transform infrared (FT-IR) absorption spectroscopy data, it was also determined that the methyl (-CH{sub 3}) peak intensity increases with increasing plasma power, whereas the hydroxyl (-OH) peak decreases. X-ray photoelectron spectroscopy data reveal an increase in C-O bonding with increasing plasma power. These results suggest that C-O bonding and hydroxyl (-OH) and methyl (-CH{sub 3}) functional groups play a critical part in cell adhesion. Furthermore, to enhance a diversity of film surface, we accumulated the patterned plasma polymerized ethylenediamine (PPEDA) thin film on the top of the PPHMDSO thin film. The PPEDA film is established to be strongly cell-adherent. This patterned two-layer film stacking method can be used to form the selectively limited cell-adhesive PPEDA spots over the adhesion-resistant surface.

  8. Microwave-assisted Chemical Transformations

    Science.gov (United States)

    In recent years, there has been a considerable interest in developing sustainable chemistries utilizing green chemistry principles. Since the first published report in 1986 by Gedye and Giguere on microwave assisted synthesis in household microwave ovens, the use of microwaves as...

  9. Low-temperature synthesis of diamond films by photoemission-assisted plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kawata, Mayuri, E-mail: kawata@mail.tagen.tohoku.ac.jp; Ojiro, Yoshihiro; Ogawa, Shuichi; Takakuwa, Yuji [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Masuzawa, Tomoaki; Okano, Ken [International Christian University, 3-10-2 Osawa, Mitaka 181-8585 (Japan)

    2014-03-15

    Photoemission-assisted plasma-enhanced chemical vapor deposition (PA-PECVD), a process in which photoelectrons emitted from a substrate irradiated with ultraviolet light are utilized as a trigger for DC discharge, was investigated in this study; specifically, the DC discharge characteristics of PA-PECVD were examined for an Si substrate deposited in advance through hot-filament chemical vapor deposition with a nitrogen-doped diamond layer of thickness ∼1 μm. Using a commercially available Xe excimer lamp (hν = 7.2 eV) to illuminate the diamond surface with and without hydrogen termination, the photocurrents were found to be 3.17 × 10{sup 12} and 2.11 × 10{sup 11} electrons/cm{sup 2}/s, respectively. The 15-fold increase in photocurrent was ascribed to negative electron affinity (NEA) caused by hydrogen termination on the diamond surfaces. The DC discharge characteristics revealed that a transition bias voltage from a Townsend-to-glow discharge was considerably decreased because of NEA (from 490 to 373 V for H{sub 2} gas and from 330 to 200 V for Ar gas), enabling a reduction in electric power consumption needed to synthesize diamond films through PA-PECVD. In fact, the authors have succeeded in growing high-quality diamond films of area 2.0 cm{sup 2} at 540 °C with a discharge power of only 1.8 W, plasma voltage of 156.4 V, and discharge current of 11.7 mA under the glow discharge of CH{sub 4}/H{sub 2}/Ar mixed gases. In addition to having only negligible amounts of graphite and amorphous carbon, the diamond films exhibit a relatively high diamond growth rate of 0.5 μm/h at temperatures as low as 540 °C, which is attributed to Ar{sup +} ions impinging on the diamond surface, and causing the removal of hydrogen atoms from the surface through sputtering. This process leads to enhanced CH{sub x} radical adsorption, because the sample was applied with a negative potential to accelerate photoelectrons in PA-PECVD.

  10. Comparison of hafnium silicate thin films on silicon (1 0 0) deposited using thermal and plasma enhanced metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rangarajan, Vishwanathan; Bhandari, Harish; Klein, Tonya M

    2002-11-01

    Hafnium silicate thin films were deposited by metal organic chemical vapor deposition (MOCVD) on Si at 400 deg. C using hafnium (IV) t-butoxide. Films annealed in O{sub 2} were compared to as-deposited films using X-ray photoelectron spectroscopy and X-ray diffraction. Hafnium silicate films were deposited by both thermal and plasma enhanced MOCVD using 2% SiH{sub 4} in He as the Si precursor. An O{sub 2} plasma increased Si content to as much as {approx}26 at.% Si. Both thermal and plasma deposited Hf silicates are amorphous as deposited, however, thermal films exhibit crystallinity after anneal. Surface roughness as measured by atomic force microscopy was found to be 1.1 and 5.1 nm for MOCVD hafnium silicate and plasma enhanced MOCVD hafnium silicate, respectively.

  11. Mechanical and piezoresistive properties of thin silicon films deposited by plasma-enhanced chemical vapor deposition and hot-wire chemical vapor deposition at low substrate temperatures

    Science.gov (United States)

    Gaspar, J.; Gualdino, A.; Lemke, B.; Paul, O.; Chu, V.; Conde, J. P.

    2012-07-01

    This paper reports on the mechanical and piezoresistance characterization of hydrogenated amorphous and nanocrystalline silicon thin films deposited by hot-wire chemical vapor deposition (HWCVD) and radio-frequency plasma-enhanced chemical vapor deposition (PECVD) using substrate temperatures between 100 and 250 °C. The microtensile technique is used to determine film properties such as Young's modulus, fracture strength and Weibull parameters, and linear and quadratic piezoresistance coefficients obtained at large applied stresses. The 95%-confidence interval for the elastic constant of the films characterized, 85.9 ± 0.3 GPa, does not depend significantly on the deposition method or on film structure. In contrast, mean fracture strength values range between 256 ± 8 MPa and 600 ± 32 MPa: nanocrystalline layers are slightly stronger than their amorphous counterparts and a pronounced increase in strength is observed for films deposited using HWCVD when compared to those grown by PECVD. Extracted Weibull moduli are below 10. In terms of piezoresistance, n-doped radio-frequency nanocrystalline silicon films deposited at 250 °C present longitudinal piezoresistive coefficients as large as -(2.57 ± 0.03) × 10-10 Pa-1 with marginally nonlinear response. Such values approach those of crystalline silicon and of polysilicon layers deposited at much higher temperatures.

  12. Study of barrier properties and chemical resistance of recycled PET coated with amorphous carbon through a plasma enhanced chemical vapour deposition (PECVD) process.

    Science.gov (United States)

    Cruz, S A; Zanin, M; Nerin, C; De Moraes, M A B

    2006-01-01

    Many studies have been carried out in order to make bottle-to-bottle recycling feasible. The problem is that residual contaminants in recycled plastic intended for food packaging could be a risk to public health. One option is to use a layer of virgin material, named functional barrier, which prevents the contaminants migration process. This paper shows the feasibility of using polyethylene terephthalate (PET) recycled for food packaging employing a functional barrier made from hydrogen amorphous carbon film deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) process. PET samples were deliberately contaminated with a series of surrogates using a FDA protocol. After that, PET samples were coated with approximately 600 and 1200 Angstrons thickness of amorphous carbon film. Then, the migration tests using as food simulants: water, 10% ethanol, 3% acetic acid, and isooctane were applied to the sample in order to check the chemical resistance of the new coated material. After the tests, the liquid extracts were analysed using a solid-phase microextraction device (SPME) coupled to GC-MS.

  13. Development of open air silicon deposition technology by silane-free atmospheric pressure plasma enhanced chemical transport under local ambient gas control

    Science.gov (United States)

    Naito, Teruki; Konno, Nobuaki; Yoshida, Yukihisa

    2016-07-01

    Open air silicon deposition was performed by combining silane-free atmospheric pressure plasma-enhanced chemical transport and a newly developed local ambient gas control technology. The effect of air contamination on silicon deposition was investigated using a vacuum chamber, and the allowable air contamination level was confirmed to be 3 ppm. The capability of the local ambient gas control head was investigated numerically and experimentally. A safe and clean process environment with air contamination less than 1 ppm was achieved. Combining these technologies, a microcrystalline silicon film was deposited in open air, the properties of which were comparable to those of silicon films deposited in a vacuum chamber.

  14. Electron energy-loss spectroscopy analysis of low-temperature plasma-enhanced chemically vapor deposited a-C:H films

    Energy Technology Data Exchange (ETDEWEB)

    Nelson, A.J.; Benson, D.K.; Tracy, C.E.; Kazmerski, L.L.; Wager, J.F.

    1989-05-01

    Electron energy-loss spectroscopy (EELS) has been applied to the analysis of a-C:H films grown on various substrates by a unique low-temperature (<100 /sup 0/C) plasma-enhanced chemical vapor deposition (PECVD) process using ethylene and hydrogen gases. EELS data are used to characterize the relative amounts of fourfold coordinated sp/sup 3/ carbon bonding to threefold coordinated sp/sup 2/ carbon bonding as well as the relative order/disorder due to substrate effects. Ellipsometric and transmission measurements provide optical constants for the PECVD a-C:H films.

  15. Synthesis of few-layer graphene on a Ni substrate by using DC plasma enhanced chemical vapor deposition (PE-CVD)

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jeong Hyuk; Castro, Edward Joseph; Hwang, Yong Gyoo; Lee, Choong Hun [Wonkwang University, Iksan (Korea, Republic of)

    2011-01-15

    In this work, few-layer graphene (FLG) was successfully grown on polycrystalline Ni a large scale by using DC plasma enhanced chemical vapor deposition (DC PE-CVD), which may serve as an alternative route in large-scale graphene synthesis. The synthesis time had an effect on the quality of the graphene produced. The applied DC voltage, on the other hand, influenced the minimization of the defect densities in the graphene grown. We also present a method of producing a free-standing polymethyl methacrylate (PMMA)/graphene membrane on a FeCl{sub 3(aq)} solution, which could then be transferred to the desired substrate.

  16. Mechanical alloying and sintering of aluminum reinforced with SiC nanopowders produced by plasma-enhanced chemical-vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Costa, J.; Fort, J.; Roura, P. [GRM, Dept. de Enginyeria Industrial, Universitat de Girona (Spain); Froyen, L. [MTM Katholieke Universiteit Leuven (Belgium); Viera, G.; Bertran, E. [FEMAN, Dept. Fisica Aplicada i Optica, Universitat de Barcelona (Spain)

    2000-07-01

    Nanometric powders of stoichiometric SiC have been synthesised by plasma-enhanced chemical-vapour deposition. These are constituted by amorphous particles with diameters ranging from 10 to 100 nm. Due to their high hydrogen content, a heat treatment at 900 C was needed to prevent spontaneous oxidation. The stabilized SiC powder was mechanically alloyed with aluminum particles of 40 {mu}m in diameter and the alloy was formed by hot isostatic sintering. The SiC content ranged from 0 to 5% in weight. A detailed analysis of the alloyed powder microstructure is presented as well as preliminary results concerning the mechanical properties after sintering. (orig.)

  17. Microwave Technology--Applications in Chemical Synthesis

    Science.gov (United States)

    Microwave heating, being specific and instantaneous, is unique and has found a place for expeditious chemical syntheses. Specifically, the solvent-free reactions are convenient to perform and have advantages over the conventional heating protocols as summarized in the previous se...

  18. Single liquid-source plasma enhanced metalorganic chemical vapor deposition of YBa sub 2 Cu sub 3 O sub 7-x thin films. Technical report

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, J.; Gardiner, R.; Kirlin, P.S.; Boerstler, R.W.; Steinbeck, J.

    1992-07-29

    High quality YBa2Cu3O7-x films were grown in-situ on LaAlO3 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition process. The metalorganic complexes M(thd)n, (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate; M = Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction. measurements indicated that single phase, highly c-axis oriented YBa2Cu3O7-x was formed in-situ at a substrate temperature 680 degC. The as-deposited films exhibited a mirror-like surface, had transition temperature Tc = 89 K, Delta Tc < 1K, and Jc(77K) = 106 A/cm2. Plasma enhanced metalorganic chemical vapor deposition, YBCO, superconductors.

  19. Chemical Modifications of Starch: Microwave Effect

    Directory of Open Access Journals (Sweden)

    Kamila Lewicka

    2015-01-01

    Full Text Available This paper presents basic methods of starch chemical modification, the effect of microwave radiation on the modification process, and the physicochemical properties of starch. It has been shown that the modifications contribute to improvement of the material performance and likewise to significant improvement of its mechanical properties. As a result, more and more extensive use of starch is possible in various industries. In addition, methods of oxidized starch and starch esters preparation are discussed. Properties of microwave radiation and its impact on starch (with particular regard to modifications described in literature are characterized.

  20. Effects of boron addition on a-Si90Ge10:H films obtained by low frequency plasma enhanced chemical vapour deposition

    Science.gov (United States)

    Pérez, Arllene M.; Renero, Francisco J.; Zúñiga, Carlos; Torres, Alfonso; Santiago, César

    2005-06-01

    Optical, structural and electric properties of (a-(Si90Ge10)1-yBy:H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10-3 to 101 Ω-1 cm-1 when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV.

  1. Microwaves in organic chemistry and organic chemical

    Directory of Open Access Journals (Sweden)

    Mijin Dušan Ž.

    2005-01-01

    Full Text Available The usual way of applying heat to a chemical reaction is the use of a Bunsen burner, an oil or some other type of bath, or an electric heater. In inorganic chemistry, microwave technology has been used since the late 1970s while it has been implemented in organic chemistry since the mid-1980s. Microwave heating has been used in the food industry for almost fifty years. The shorter reaction times and expanded reaction range that is offered by microwave technology are suited to the increased demands in industry. For example, there is a requirement in the pharmaceutical industry for a higher number of a novel chemical entities to be produced, which requires chemists to employ a number of resources to reduce time for the production of compounds. Also, microwaves are used in the food industry, as well as in the pyrolysis of waste materials, sample preparation, the solvent extraction of natural products and the hydrolysis of proteins and peptides.

  2. Chemical Modifications of Starch: Microwave Effect

    OpenAIRE

    Kamila Lewicka; Przemysław Siemion; Piotr Kurcok

    2015-01-01

    This paper presents basic methods of starch chemical modification, the effect of microwave radiation on the modification process, and the physicochemical properties of starch. It has been shown that the modifications contribute to improvement of the material performance and likewise to significant improvement of its mechanical properties. As a result, more and more extensive use of starch is possible in various industries. In addition, methods of oxidized starch and starch esters preparation ...

  3. Preparation of Aligned Ultra-long and Diameter-controlled Silicon Oxide Nanotubes by Plasma Enhanced Chemical Vapor Deposition Using Electrospun PVP Nanofiber Template

    Directory of Open Access Journals (Sweden)

    Zhou Ming

    2009-01-01

    Full Text Available Abstract Well-aligned and suspended polyvinyl pyrrolidone (PVP nanofibers with 8 mm in length were obtained by electrospinning. Using the aligned suspended PVP nanofibers array as template, aligned ultra-long silicon oxide (SiOx nanotubes with very high aspect ratios have been prepared by plasma-enhanced chemical vapor deposition (PECVD process. The inner diameter (20–200 nm and wall thickness (12–90 nm of tubes were controlled, respectively, by baking the electrospun nanofibers and by coating time without sacrificing the orientation degree and the length of arrays. The micro-PL spectrum of SiOx nanotubes shows a strong blue–green emission with a peak at about 514 nm accompanied by two shoulders around 415 and 624 nm. The blue–green emission is caused by the defects in the nanotubes.

  4. Tensile test of a silicon microstructure fully coated with submicrometer-thick diamond like carbon film using plasma enhanced chemical vapor deposition method

    Science.gov (United States)

    Zhang, Wenlei; Uesugi, Akio; Hirai, Yoshikazu; Tsuchiya, Toshiyuki; Tabata, Osamu

    2017-06-01

    This paper reports the tensile properties of single-crystal silicon (SCS) microstructures fully coated with sub-micrometer thick diamond like carbon (DLC) film using plasma enhanced chemical vapor deposition (PECVD). To minimize the deformations or damages caused by non-uniform coating of DLC, which has high compression residual stress, released SCS specimens with the dimensions of 120 µm long, 4 µm wide, and 5 µm thick were coated from the top and bottom side simultaneously. The thickness of DLC coating is around 150 nm and three different bias voltages were used for deposition. The tensile strength improved from 13.4 to 53.5% with the increasing of negative bias voltage. In addition, the deviation in strength also reduced significantly compared to bare SCS sample.

  5. Effect of residual stresses on the strength, adhesion and wear resistance of SiC coatings obtained by plasma-enhanced chemical vapor deposition on low alloy steel

    Energy Technology Data Exchange (ETDEWEB)

    Kattamis, T.Z. (Department of Metallurgy, Institute of Materials Science, University of Connecticut, Storrs, CT 06269-3136 (United States)); Chen, M. (Department of Metallurgy, Institute of Materials Science, University of Connecticut, Storrs, CT 06269-3136 (United States)); Skolianos, S. (Aristoteles University, Thessaloniki (Greece)); Chambers, B.V. (Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States))

    1994-11-01

    Amorphous hydrogenated silicon carbide thin coatings were deposited on AISI 4340 low alloy steel wafers and thicker steel specimens by plasma-enhanced chemical vapor deposition. The cohesion of the coating, its adhesion to the substrate and its friction coefficient were evaluated by automatic scratch testing, and its wear resistance by pin-on-disk tribometry. During annealing, the residual stress attributed to hydrogen entrapment during deposition gradually changed from compressive to tensile and its rate of increase decreased with increasing annealing time. The cohesion and adhesion failure loads and the abrasive wear resistance decreased with decreasing residual compressive stress and increasing residual tensile stress. The friction coefficient between the coating surface and a diamond stylus decreased with increasing annealing time. ((orig.))

  6. Amorphous silicon carbon films prepared by hybrid plasma enhanced chemical vapor/sputtering deposition system: Effects of r.f. power

    Energy Technology Data Exchange (ETDEWEB)

    Rashid, Nur Maisarah Abdul, E-mail: nurmaisarahrashid@gmail.com [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Ritikos, Richard; Othman, Maisara; Khanis, Noor Hamizah; Gani, Siti Meriam Ab. [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Muhamad, Muhamad Rasat [Chancellery Office, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Rahman, Saadah Abdul, E-mail: saadah@um.edu.my [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Chancellery Office, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia)

    2013-02-01

    Silicon carbon films were deposited using a hybrid radio frequency (r.f.) plasma enhanced chemical vapor deposition (PECVD)/sputtering deposition system at different r.f. powers. This deposition system combines the advantages of r.f. PECVD and sputtering techniques for the deposition of silicon carbon films with the added advantage of eliminating the use of highly toxic silane gas in the deposition process. Silicon (Si) atoms were sputtered from a pure amorphous silicon (a-Si) target by argon (Ar) ions and carbon (C) atoms were incorporated into the film from C based growth radicals generated through the discharge of methane (CH{sub 4}) gas. The effects of r.f. powers of 60, 80, 100, 120 and 150 W applied during the deposition process on the structural and optical properties of the films were investigated. Raman spectroscopic studies showed that the silicon carbon films contain amorphous silicon carbide (SiC) and amorphous carbon (a-C) phases. The r.f. power showed significant influence on the C incorporation in the film structure. The a-C phases became more ordered in films with high C incorporation in the film structure. These films also produced high photoluminescence emission intensity at around 600 nm wavelength as a result of quantum confinement effects from the presence of sp{sup 2} C clusters embedded in the a-SiC and a-C phases in the films. - Highlights: ► Effects of radio frequency (r.f.) power on silicon carbon (SiC) films were studied. ► Hybrid plasma enhanced chemical vapor deposition/sputtering technique was used. ► r.f. power influences C incorporation in the film structure. ► High C incorporation results in higher ordering of the amorphous C phase. ► These films produced high photoluminescence emission intensity.

  7. Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

    Energy Technology Data Exchange (ETDEWEB)

    Ghrib, M., E-mail: mondherghrib@yahoo.fr [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Gaidi, M.; Ghrib, T.; Khedher, N. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Ben Salam, M. [L3M, Department of Physics, Faculty of Sciences of Bizerte, 7021 Zarzouna (Tunisia); Ezzaouia, H. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia)

    2011-08-15

    Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

  8. Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wight, Daniel Nilsen

    2008-07-01

    Within this thesis, several important subjects related to the use of amorphous silicon nitride made by plasma enhanced chemical vapour deposition as an anti-reflective coating on silicon solar cells are presented. The first part of the thesis covers optical simulations to optimise single and double layer anti-reflective coatings with respect to optical performance when situated on a silicon solar cell. The second part investigates the relationship between important physical properties of silicon nitride films when deposited under different conditions. The optical simulations were either based on minimising the reflectance off a silicon nitride/silicon wafer stack or maximising the transmittance through the silicon nitride into the silicon wafer. The former method allowed consideration of the reflectance off the back surface of the wafer, which occurs typically at wavelengths above 1000 nm due to the transparency of silicon at these wavelengths. However, this method does not take into consideration the absorption occurring in the silicon nitride, which is negligible at low refractive indexes but quite significant when the refractive index increases above 2.1. For high-index silicon nitride films, the latter method is more accurate as it considers both reflectance and absorbance in the film to calculate the transmittance into the Si wafer. Both methods reach similar values for film thickness and refractive index for optimised single layer anti-reflective coatings, due to the negligible absorption occurring in these films. For double layer coatings, though, the reflectance based simulations overestimated the optimum refractive index for the bottom layer, which would have lead to excessive absorption if applied to real anti-reflective coatings. The experimental study on physical properties for silicon nitride films deposited under varying conditions concentrated on the estimation of properties important for its applications, such as optical properties, passivation

  9. Effects of boron addition on a-Si{sub 90}Ge{sub 10}:H films obtained by low frequency plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Perez, Arllene M [Instituto Nacional de Astrofisica, Optica y Electronica (INAOE), Luis E Erro no. 1, Santa Maria Tonantzintla, CP 72840, Puebla, Puebla (Mexico); Universidad Popular Autonoma del Estado de Puebla (UPAEP), 21 Sur 1103 Colonia Santiago, CP 72160, Puebla, Puebla (Mexico); Renero, Francisco J [Instituto Nacional de Astrofisica, Optica y Electronica (INAOE), Luis E Erro no. 1, Santa Maria Tonantzintla, CP 72840, Puebla, Puebla (Mexico); Zuniga, Carlos [Instituto Nacional de AstrofIsica, Optica y Electronica (INAOE), Luis E Erro no. 1, Santa MarIa Tonantzintla, CP 72840, Puebla, Puebla (Mexico); Torres, Alfonso [Instituto Nacional de Astrofisica, Optica y Electronica (INAOE), Luis E Erro no. 1, Santa MarIa Tonantzintla, CP 72840, Puebla, Puebla (Mexico); Santiago, Cesar [Universidad Politecnica de Tulancingo, Prolongacion Guerrero 808 Colonia Caltengo, CP 43626, Tulancingo, Hidalgo (Mexico)

    2005-06-29

    Optical, structural and electric properties of (a-(Si{sub 90}Ge{sub 10}){sub 1-y}B{sub y}:H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10{sup -3} to 10{sup 1} {omega}{sup -1} cm{sup -1} when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV.

  10. Simultaneous synthesis of nanodiamonds and graphene via plasma enhanced chemical vapor deposition (MW PE-CVD) on copper.

    Science.gov (United States)

    Gottlieb, Steven; Wöhrl, Nicolas; Schulz, Stephan; Buck, Volker

    2016-01-01

    The simultaneous growth of both nanodiamonds and graphene on copper samples is described for the first time. A PE-CVD process is used to synthesize graphene layers and nanodiamond clusters from a hydrogen/methane gas mixture as it is typically done successfully in thermal CVD processes for graphene synthesis. However, the standard thermal CVD process is not without problems since the deposition of graphene is affected by the evaporation of a notable amount of copper caused by the slow temperature increase typical for thermal CVD resulting in a long process time. In sharp contrast, the synthesis of graphene by PE-CVD can circumvent this problem by substantially shortening the process time at holding out the prospect of a lower substrate temperature. The reduced thermal load and the possibility to industrially scale-up the PE-CVD process makes it a very attractive alternative to the thermal CVD process with respect to the graphene production in the future. Nanodiamonds are synthesized in PE-CVD reactors for a long time because these processes offer a high degree of control over the film's nanostructure and simultaneously providing a significant high deposition rate. To model the co-deposition process, the three relevant macroscopic parameters (pressure, gas mixture and microwave power) are correlated with three relevant process properties (plasma ball size, substrate temperature and C2/Hα-ratio) and the influence on the quality of the deposited carbon allotropes is investigated. For the evaluation of the graphene as well as the nanodiamond quality, Raman spectroscopy used whereas the plasma properties are measured by optical methods. It is found that the diamond nucleation can be influenced by the C2/Hα-ratio in the plasma, while the graphene quality remains mostly unchanged by this parameter. Moreover it is derived from the experimental data that the direct plasma contact with the copper surface is beneficial for the nucleation of the diamond while the growth and

  11. Si nanowires grown by Al-catalyzed plasma-enhanced chemical vapor deposition: synthesis conditions, electrical properties and application to lithium battery anodes

    Science.gov (United States)

    Toan, Le Duc; Moyen, Eric; Zamfir, Mihai Robert; Joe, Jemee; Kim, Young Woo; Pribat, Didier

    2016-01-01

    Silicon nanowires have been synhesized using Al as a catalyst. Silane (SiH4) diluted in H2 carrier gas was employed as Si precursor in a plasma enhanced chemical vapor deposition system operated at various temperatures (450 °C and 550 °C). Those growth temperatures, which are lower than the eutectic temperature in the Al-Si system (577 °C) suggests a vapor-solid-solid growth mechanism. Four point resistance measurements and back-gated current-voltage measurements indicated that silicon nanowires were heavily doped (p type), with a doping concentration of a few 1019 cm-3. We have measured hole mobility values of ˜16 cm2 V-1 s-1 at 450 °C and ˜30 cm2 V-1 s-1 at 550 °C. Transmission electron microscope analyses showed that the silicon nanowires were highly twinned even when they grow epitaxially on (111) Si substrates. We have also evaluated the use of those highly doped Si nanowires for lithium-ion battery anodes. We have observed a good cycling behavior during the first 65 charge-discharge cycles, followed by a slow capacity decay. After 150 cycles at a charge-discharge rate of 0.1 C, the electrode capacity was still 1400 mAh g-1. The ageing mechanism seems to be related to the delamination of the SiNWs from the stainless steel substrate on which they were grown.

  12. SiO{sub 2}/TiO{sub 2} thin films with variable refractive index prepared by ion beam induced and plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gracia, F. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain); Yubero, F. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain); Holgado, J.P. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain); Espinos, J.P. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain); Gonzalez-Elipe, A.R. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain)]. E-mail: arge@icmse.csic.es; Girardeau, T. [Laboratoire de Metallurgie Physique de Poitiers, UMR 6630 CNRS, Bat SP2MI BP 30179, 86962-Futuroscope-Chasseneuil Cedex (France)

    2006-04-03

    SiO{sub 2}/TiO{sub 2} optical thin films with variable compositions have been prepared by ion beam induced and plasma enhanced chemical vapour deposition (IBICVD and PECVD). While the films obtained by IBICVD were very compact, the PECVD ones with a high content of Ti presented a columnar microstructure. The formation of Si-O-Ti bonds and a change in the environment around titanium from four- to six-coordinated has been proved by vibrational and X-ray absorption spectroscopies. The refractive index increased with the titanium content from 1.45 to 2.46 or 2.09 for, respectively, the IBICVD and PECVD films. Meanwhile, the band gap decreased, first sharply and then more smoothly up to the value of pure TiO{sub 2}. It is concluded that the optical properties of SiO{sub 2}/TiO{sub 2} thin films can be properly tailored by using these two procedures.

  13. Optical and morphological properties of SiN{sub x}/Si amorphous multilayer structures grown by Plasma Enhanced Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Santana, G.; Melo, O. de; Monroy, B.M.; Fandino, J.; Ortiz, A.; Alonso, J.C. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Cd. Universitaria, A.P. 70-360, Coyoacan (Mexico); Aguilar-Hernandez, J.; Cruz, F.; Contreras-Puentes, G. [Escuela Superior de Fisica y Matematicas del Instituto Politecnico Nacional; Edificio 9, U.P.A.L.M. (Mexico)

    2005-08-01

    Very thin layers of Si were grown in between silicon nitride layers using Plasma Enhanced Chemical Vapor Deposition (PECVD) technique and SiH{sub 2}Cl{sub 2}/H{sub 2}/NH{sub 3} mixtures. Deposition conditions were selected to favor Si cluster formation. Room Temperature Photoluminescence (RT-PL) and optical transmission in different ranges were used to evaluate the optical and structural properties of the films. Scanning Electron Microscopy (SEM) of the cross section of cleaved samples allowed to observe a clear pattern of Si clusters embedded in the SiN matrix. The UV-VIS absorption spectra present two band edges. We assume that the higher band gap is due to the amorphous Si clusters. RT-PL spectra are characterized by two broad bands: one centered at 1.5 eV and the other at 2.1 eV. The broad luminescence centered at 2.1 eV could be associated with the higher band gap observed in absorption spectrum. After vacuum annealing of the samples at 400 and ordm;C, the band at 2.1 eV disappears. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Growth of Ge nanoparticles on SiO{sub 2}/Si interfaces during annealing of plasma enhanced chemical vapor deposited thin films

    Energy Technology Data Exchange (ETDEWEB)

    Foss, S. [Department of Physics, University of Oslo, PO Box 1048-Blindern, N-0316 (Norway)]. E-mail: stefoss@fys.uio.no; Finstad, T.G. [Department of Physics, University of Oslo, PO Box 1048-Blindern, N-0316 (Norway); Dana, A. [Department of Physics, Bilkent University, 06800 Ankara (Turkey); Aydinli, A. [Department of Physics, Bilkent University, 06800 Ankara (Turkey)

    2007-06-04

    Multilayer germanosilicate (Ge:SiO{sub 2}) films have been grown by plasma enhanced chemical vapor deposition. Each Ge:SiO{sub 2} layer is separated by a pure SiO{sub 2} layer. The samples were heat treated at 900 deg. C for 15 and 45 min. Transmission electron microscopy investigations show precipitation of particles in the layers of highest Ge concentration. Furthermore there is evidence of diffusion between the layers. This paper focuses mainly on observed growth of Ge particles close to the interface, caused by Ge diffusion from the Ge:SiO{sub 2} layer closest to the interface through a pure SiO{sub 2} layer and to the interface. The particles grow as spheres in a direction away from the interface. Particles observed after 15 min anneal time are 4 nm in size and are amorphous, while after 45 min anneal time they are 7 nm in size and have a crystalline diamond type Ge structure.

  15. Single liquid source plasma-enhanced metalorganic chemical vapor deposition of high-quality YBa2Cu3O(7-x) thin films

    Science.gov (United States)

    Zhang, Jiming; Gardiner, Robin A.; Kirlin, Peter S.; Boerstler, Robert W.; Steinbeck, John

    1992-01-01

    High quality YBa2Cu3O(7-x) films were grown in-situ on LaAlO3 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition process. The metalorganic complexes M(thd) (sub n), (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate; M = Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet. The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction measurements indicated that single phase, highly c-axis oriented YBa2Cu3O(7-x) was formed in-situ at substrate temperature 680 C. The as-deposited films exhibited a mirror-like surface, had transition temperature T(sub cO) approximately equal to 89 K, Delta T(sub c) less than 1 K, and Jc (77 K) = 10(exp 6) A/sq cm.

  16. Characterization of Plasma Enhanced Chemical Vapor Deposition-Physical Vapor Deposition transparent deposits on textiles to trigger various antimicrobial properties to food industry textiles

    Energy Technology Data Exchange (ETDEWEB)

    Brunon, Celine [Universite de Lyon, Universite Lyon 1, Laboratoire des Sciences Analytiques (LSA), CNRS, UMR 5180, Bat. J. Raulin 5eme etage, F-69622 Villeurbanne Cedex (France); Chadeau, Elise; Oulahal, Nadia [Universite de Lyon, Universite Lyon 1, Laboratoire de Recherche en Genie Industriel Alimentaire (LRGIA, E.A. 3733), Rue Henri de Boissieu, F-01000 Bourg en Bresse (France); Grossiord, Carol [Science et Surface, 64, Chemin des Mouilles, F-69130 Ecully (France); Dubost, Laurent [HEF, ZI SUD, Rue Benoit Fourneyron, F-42166 Andrezieux Boutheon (France); Bessueille, Francois [Universite de Lyon, Universite Lyon 1, Laboratoire des Sciences Analytiques (LSA), CNRS, UMR 5180, Bat. J. Raulin 5eme etage, F-69622 Villeurbanne Cedex (France); Simon, Farida [TDV Industrie, 43 Rue du Bas des Bois, BP 121, F-53012 Laval Cedex (France); Degraeve, Pascal [Universite de Lyon, Universite Lyon 1, Laboratoire de Recherche en Genie Industriel Alimentaire (LRGIA, E.A. 3733), Rue Henri de Boissieu, F-01000 Bourg en Bresse (France); Leonard, Didier, E-mail: didier.leonard@univ-lyon1.fr [Universite de Lyon, Universite Lyon 1, Laboratoire des Sciences Analytiques (LSA), CNRS, UMR 5180, Bat. J. Raulin 5eme etage, F-69622 Villeurbanne Cedex (France)

    2011-07-01

    Textiles for the food industry were treated with an original deposition technique based on a combination of Plasma Enhanced Chemical Vapor Deposition and Physical Vapor Deposition to obtain nanometer size silver clusters incorporated into a SiOCH matrix. The optimization of plasma deposition parameters (gas mixture, pressure, and power) was focused on textile transparency and antimicrobial properties and was based on the study of both surface and depth composition (X-ray Photoelectron Spectroscopy (XPS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), as well as Transmission Electron Microscopy, Atomic Force Microscopy, SIMS depth profiling and XPS depth profiling on treated glass slides). Deposition conditions were identified in order to obtain a variable and controlled quantity of {approx} 10 nm size silver particles at the surface and inside of coatings exhibiting acceptable transparency properties. Microbiological characterization indicated that the surface variable silver content as calculated from XPS and ToF-SIMS data directly influences the level of antimicrobial activity.

  17. Properties of silicon nitride thin overlays deposited on optical fibers — Effect of fiber suspension in radio frequency plasma-enhanced chemical vapor deposition reactor

    Energy Technology Data Exchange (ETDEWEB)

    Śmietana, M., E-mail: M.Smietana@elka.pw.edu.pl [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, Warsaw 00-662 (Poland); Dominik, M.; Myśliwiec, M.; Kwietniewski, N. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, Warsaw 00-662 (Poland); Mikulic, P. [Centre de Recherche en Photonique, Université du Québec en Outaouais, 101 rue Saint-Jean-Bosco, Gatineau, J8X 3X7, Québec (Canada); Witkowski, B.S. [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw 02-666 (Poland); Bock, W.J. [Centre de Recherche en Photonique, Université du Québec en Outaouais, 101 rue Saint-Jean-Bosco, Gatineau, J8X 3X7, Québec (Canada)

    2016-03-31

    This work discusses the effect of sample suspension in radio frequency plasma-enhanced chemical vapor deposition process on properties of the obtained overlays. Silicon nitride (SiN{sub x}) overlays were deposited on flat silicon wafers and cylindrical fused silica optical fibers. The influence of the suspension height and fiber diameter on SiN{sub x} deposition rate is investigated. It has been found that thickness of the SiN{sub x} overlay significantly increases with suspension height, and the deposition rate depends on fiber dimensions. Moreover, the SiN{sub x} overlays were also deposited on long-period gratings (LPGs) induced in optical fiber. Measurements of the LPG spectral response combined with its numerical simulations allowed for a discussion on properties of the deposited overlay. The measurements have proven higher overlay deposition rate on the suspended fiber than on flat Si wafer placed on the electrode. Results of this work are essential for precise tuning of the functional properties of new generations of optical devices such as optical sensors, filters and resonators, which typically are based on optical fibers and require the overlays with well defined properties. - Highlights: • The effect of optical fiber suspension in plasma process is discussed. • The deposition rate of silicon nitride (SiN{sub x}) overlay depends on fiber dimensions. • Thickness of the SiN{sub x} overlay strongly increases with suspension height. • Measurements and simulations of long-period grating confirms experimental results.

  18. Formation and characterization of the MgO protecting layer deposited by plasma-enhanced metal-organic chemical-vapor deposition

    CERN Document Server

    Kang, M S; Byun, J C; Kim, D S; Choi, C K; Lee, J Y; Kim, K H

    1999-01-01

    MgO films were prepared on Si(100) and soda-lime glass substrates by using plasma-enhanced metal-organic chemical-vapor deposition. Various ratios of the O sub 2 /CH sub 3 MgO sup t Bu gas mixture and various gas flow rates were tested for the film fabrications. Highly (100)-oriented MgO films with good crystallinity were obtained with a 10 sccm CH sub 3 MgO sup t Bu flow without an O sub 2 gas flow. About 5 % carbon was contained in all the MgO films. The refractive index and the secondary electron emission coefficient for the best quality film were 1.43 and 0.45, respectively. The sputtering rate was about 0.2 nm/min for 10 sup 1 sup 1 cm sup - sup 3 Ar sup + ion density. Annealing at 500 .deg. C in an Ar ambient promoted the grain size without inducing a phase transition.

  19. Performance Improvement of Microcrystalline p-SiC/i-Si/n-Si Thin Film Solar Cells by Using Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Hsin-Ying Lee

    2014-01-01

    Full Text Available The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1 to 512 cm−1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD results, the microcrystalline i-Si films with (111, (220, and (311 diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2 to 18.16 mA/cm2 and from 6.89% to 8.58%, respectively.

  20. Characteristics of silicon nitride deposited by VHF (162 MHz)-plasma enhanced chemical vapor deposition using a multi-tile push-pull plasma source

    Science.gov (United States)

    Kim, Ki Seok; Sirse, Nishant; Kim, Ki Hyun; Rogers Ellingboe, Albert; Kim, Kyong Nam; Yeom, Geun Young

    2016-10-01

    To prevent moisture and oxygen permeation into flexible organic electronic devices formed on substrates, the deposition of an inorganic diffusion barrier material such as SiN x is important for thin film encapsulation. In this study, by a very high frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push-pull plasma source, SiN x layers were deposited with a gas mixture of NH3/SiH4 with/without N2 and the characteristics of the plasma and the deposited SiN x film as the thin film barrier were investigated. Compared to a lower frequency (60 MHz) plasma, the VHF (162 MHz) multi-tile push-pull plasma showed a lower electron temperature, a higher vibrational temperature, and higher N2 dissociation for an N2 plasma. When a SiN x layer was deposited with a mixture of NH3/SiH4 with N2 at a low temperature of 100 °C, a stoichiometric amorphous Si3N4 layer with very low Si-H bonding could be deposited. The 300 nm thick SiN x film exhibited a low water vapor transmission rate of 1.18  ×  10-4 g (m2 · d)-1, in addition to an optical transmittance of higher than 90%.

  1. Effects of annealing temperature on crystallisation kinetics and properties of polycrystalline Si thin films and solar cells on glass fabricated by plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tao Yuguo, E-mail: yuguo.tao@hotmail.com [Photovoltaics Centre of Excellence, University of New South Wales, Sydney NSW 2052 (Australia); Varlamov, Sergey; Jin, Guangyao [Photovoltaics Centre of Excellence, University of New South Wales, Sydney NSW 2052 (Australia); Wolf, Michael; Egan, Renate [CSG Solar Pty Ltd, Sydney, NSW (Australia)

    2011-10-31

    Solid-phase crystallisation of Si thin films on glass fabricated by plasma enhanced chemical vapour deposition is compared at different annealing temperatures. Four independent techniques, optical transmission microscopy, Raman and UV reflectance spectroscopy, and X-ray diffraction, are used to characterise the crystallisation kinetics and film properties. The 1.5 {mu}m thick films with the n+/p-/p+ solar cell structure have incubation times of about 300, 53, and 14 min and full crystallisation times of about 855, 128, and 30 min at 600 deg. C, 640 deg. C, and 680 deg. C respectively. Estimated activation energies for incubation and crystal growth are 2.7 and 3.2 eV respectively. The average grain size in the resulting polycrystalline Si films measured from scanning electron microscopy images gradually decreases with a higher annealing temperature and the crystal quality becomes poorer according to the Raman, UV reflection, and X-ray diffraction results. The dopant activation and majority carrier mobilities in heavily doped n+ and p+ layers are similar for all crystallisation temperatures. Both the open-circuit voltage and the spectral response are lower for the cells crystallised at higher temperatures and the minority carrier diffusion lengths are shorter accordingly although they are still longer than the cell thickness for all annealing temperatures. The results indicate that shortening the crystallisation time by merely increasing the crystallisation temperature offers little or no merits for PECVD polycrystalline Si thin-film solar cells on glass.

  2. Thermal Modification of a-SiC:H Films Deposited by Plasma Enhanced Chemical Vapour Deposition from CH4+SiH4 Mixtures

    Institute of Scientific and Technical Information of China (English)

    刘玉学; 王宁会; 刘益春; 申德振; 范希武; 李灵燮

    2001-01-01

    The effects of thermal annealing on photoluminescence (PL) and structural properties of a-Si1-xCx :H films deposited by plasma enhanced chemical vapour deposition from CH4+SiH4 mixtures are studied by using infrared, PL and transmittance-reflectance spectra. In a-SiC:H network, high-temperature annealing gives rise to the effusion of hydrogen from strongly bonded hydrogen in SiH, SiH2, (SiH2)n, SiCHn and CHn configurations and the break of weak C-C, Si-Si and C-Si bonds. A structural rearrangement will occur, which causes a significant correlation of the position and intensity of the PL signal with the annealing temperature. The redshift of the PL peak is related to the destruction of the confining power of barriers. However, the PL intensity does not have a significant correlation with the annealing temperature for a C-rich a-SiC:H network, which refers to the formation of π-bond cluster as increasing carbon content. It is indicated that the thermal stability of C-rich a-Si1-xCx:H films is better than that of Si-like a-Si1-xCx :H films.

  3. Polyethylene Oxide Films Polymerized by Radio Frequency Plasma-Enhanced Chemical Vapour Phase Deposition and Its Adsorption Behaviour of Platelet-Rich Plasma

    Science.gov (United States)

    Hu, Wen-Juan; Xie, Fen-Yan; Chen, Qiang; Weng, Jing

    2008-10-01

    We present polyethylene oxide (PEO) functional films polymerized by rf plasma-enhanced vapour chemical deposition (rf-PECVD) on p-Si (100) surface with precursor ethylene glycol dimethyl ether (EGDME) and diluted Ar in pulsed plasma mode. The influences of discharge parameters on the film properties and compounds are investigated. The film structure is analysed by Fourier transform infrared (FTIR) spectroscopy. The water contact angle measurement and atomic force microscope (AFM) are employed to examine the surface polarity and to detect surface morphology, respectively. It is concluded that the smaller duty cycle in pulsed plasma mode contributes to the rich C-O-C (EO) group on the surfaces. As an application, the adsorption behaviour of platelet-rich plasma on plasma polymerization films performed in-vitro is explored. The shapes of attached cells are studied in detail by an optic invert microscope, which clarifies that high-density C-O-C groups on surfaces are responsible for non-fouling adsorption behaviour of the PEO films.

  4. Polyethylene Oxide Films Polymerized by Radio Frequency Plasma-Enhanced Chemical Vapour Phase Deposition and Its Adsorption Behaviour of Platelet-Rich Plasma

    Institute of Scientific and Technical Information of China (English)

    HU Wen-Juan; XIE Fen-Yan; CHEN Qiang; WENG Jing

    2008-01-01

    We present polyethylene oxide (PEO) functional films polymerized by rf plasma-enhanced vapour chemical deposition (rf-PECVD) on p-Si (100) surface with precursor ethylene glycol dimethyl ether (EGDME) and diluted Ar in pulsed plasma mode. The influences of discharge parameters on the film properties and compounds are investigated. The film structure is analysed by Fourier transform infrared (FTIR) spectroscopy. The water contact angle measurement and atomic force microscope (AFM) are employed to examine the surface polarity and to detect surface morphology, respectively. It is concluded that the smaller duty cycle in pulsed plasma mode contributes to the rich C-O-C (EO) group on the surfaces. As an application, the adsorption behaviour of platelet-rich plasma on plasma polymerization films performed in-vitro is explored. The shapes of attached cells are studied in detail by an optic invert microscope, which clarifies that high-density C-O-C groups on surfaces are responsible for non-fouling adsorption behaviour of the PEO films.

  5. Impact of Hydrocarbon Control in Ultraviolet-Assisted Restoration Process for Extremely Porous Plasma Enhanced Chemical Vapor Deposition SiOCH Films with k = 2.0

    Science.gov (United States)

    Kimura, Yosuke; Ishikawa, Dai; Nakano, Akinori; Kobayashi, Akiko; Matsushita, Kiyohiro; de Roest, David; Kobayashi, Nobuyoshi

    2012-05-01

    We investigated the effects of UV-assisted restoration on porous plasma-enhanced chemical vapor deposition (PECVD) SiOCH films with k = 2.0 and 2.3 having high porosities. By applying the UV-assisted restoration to O2-plasma-damaged films with k = 2.0 and 2.3, the recovery of the k-value was observed on the k = 2.3 film in proportion to -OH group reduction. However, the k = 2.0 film did not show recovery in spite of -OH group reduction. We found that hydrocarbon content in the k = 2.0 film was significantly increased by the UV-assisted restoration compared with the k = 2.3 film. According to these findings, we optimized the UV-assisted restoration to achieve improved controllability of the hydrocarbon uptake in the k = 2.0 film and confirmed the recovery of the k-value for O2-plasma-damaged film. Thus, adjusting the hydrocarbon uptake was crucial for restoring extremely porous SiOCH film.

  6. Single liquid source plasma-enhanced metalorganic chemical vapor deposition of high-quality YBa2Cu3O(7-x) thin films

    Science.gov (United States)

    Zhang, Jiming; Gardiner, Robin A.; Kirlin, Peter S.; Boerstler, Robert W.; Steinbeck, John

    1992-01-01

    High quality YBa2Cu3O(7-x) films were grown in-situ on LaAlO3 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition process. The metalorganic complexes M(thd) (sub n), (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate; M = Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet. The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction measurements indicated that single phase, highly c-axis oriented YBa2Cu3O(7-x) was formed in-situ at substrate temperature 680 C. The as-deposited films exhibited a mirror-like surface, had transition temperature T(sub cO) approximately equal to 89 K, Delta T(sub c) less than 1 K, and Jc (77 K) = 10(exp 6) A/sq cm.

  7. Characterization of the SiO2 film deposited by using plasma enhanced chemical vapor deposition (PECVD with TEOS/N2/O2

    Directory of Open Access Journals (Sweden)

    Meysam Zarchi

    2013-12-01

    Full Text Available The purpose of this study was to examine how certain parameters like temperature, pressure, and gas composition affect the characteristics of SiO2 film by Plasma Enhanced Chemical Vapor Deposition (PECVD. We used of low temperature and an inductively coupled plasma (ICP for various with gas mixtures of TEOS/N2/O2 at a given RF power and dc bias voltage. For the gas mixture with 40 sccm of N2 in TEOS, 100 standard cubic centimeters per minute (sccm of N2, and 500 sccm of O2, transparent and scratch-resistant SiO2 could be deposited with a deposition rate of 30 nm/min when RF power of 500 W and a dc-bias voltage of 350V were applied. The characteristics of the deposited SiO2, such as the composition, the binding energy, etc. were compared with the SiO2 deposited by using thermal CVD and evaporation. It was found that the SiO2 deposited by PECVD with TEOS/N2/O2 exhibited properties typical of SiO2 deposited applying thermal CVD and evaporation. The surface roughness of the 100 nm-thick SiO2 deposited by PECVD was similar to that of the substrate.

  8. Plasma enhanced chemical vapor deposition of Cr{sub 2}O{sub 3} thin films using chromium hexacarbonyl (Cr(CO){sub 6}) precursor

    Energy Technology Data Exchange (ETDEWEB)

    Wang Jinwen [Center for Materials for Information Technology and Department of Chemical and Biological Engineering, University of Alabama, Tuscaloosa, AL 35487 (United States)], E-mail: wang006@bama.ua.edu; Gupta, Arunava; Klein, Tonya M. [Center for Materials for Information Technology and Department of Chemical and Biological Engineering, University of Alabama, Tuscaloosa, AL 35487 (United States)

    2008-09-01

    Chromium oxide (Cr{sub 2}O{sub 3}) thin films have been deposited by plasma enhanced chemical vapor deposition on c-cut sapphire (Al{sub 2}O{sub 3}) and oxidized silicon substrates at temperatures between 250 and 400 deg. C using the precursor chromium hexacarbonyl (Cr(CO){sub 6}). The film growth rate ranges between 5 and 14 A/min, with the growth rate going through a maximum at 300 deg. C before decreasing at higher temperature, suggesting the presence of competing deposition and desorption reaction channels. Scanning electron microscope images indicate that the density of grains and film crystallinity increases with increasing substrate temperatures, while atomic force microscopy shows an overall decrease in film roughness with increasing temperature. Normal {theta} - 2{theta} Bragg X-ray diffraction results show that films deposited on SiO{sub 2} are polycrystalline, while those on sapphire have a preferred (0 0 0 l) orientation. The epitaxial nature of the film growth on Al{sub 2}O{sub 3} has been confirmed from the symmetry of off-axis X-ray scans.

  9. Tribological properties and thermal stability of hydrogenated, silicon/nitrogen-coincorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Nakazawa, Hideki; Okuno, Saori; Magara, Kohei; Nakamura, Kazuki; Miura, Soushi; Enta, Yoshiharu

    2016-12-01

    We have deposited hydrogenated, silicon/nitrogen-incorporated diamond-like carbon (Si-N-DLC) films by plasma-enhanced chemical vapor deposition using hexamethyldisilazane [((CH3)3Si)2NH; HMDS] as the Si and N source, and compared the tribological performance and thermal stability of the Si-N-DLC films with those of hydrogenated, Si-incorporated DLC (Si-DLC) films prepared using dimethylsilane [SiH2(CH3)2] as the Si source. The deposited films were annealed at 723-873 K in air atmosphere. The friction coefficients of hydrogenated DLC films after annealing significantly increased at the initial stages of friction tests. On the other hand, the friction coefficients of the Si-N-DLC films deposited at an HMDS flow ratio [HMDS/(HMDS+CH4)] of 2.27% remained low after the annealing even at 873 K. We found that the wear rate of the Si-N-DLC film deposited at 2.27% and -1000 V remained almost unchanged after the annealing at 873 K, whereas that of the Si-DLC film with a similar Si fraction deposited at -1000 V significantly increased after the annealing at 773 K.

  10. Hydrogenated amorphous carbon-nitride films deposited on Si(100) by direct-current saddle-field plasma-enhanced chemical-vapor deposition

    CERN Document Server

    Jang, H K; Lee, Y S; Whangbo, S W; Whang, C N; Yoo, Y Z; Kim, H G

    1999-01-01

    Hydrogenated amorphous carbon nitride [a-C:H(N)] films were deposited using dc saddle-field plasma-enhanced chemical-vapor deposition. The structural and the compositional changes induced in the films by the different flow-rate ratios of N sub 2 to CH sub 4 (n sub N sub 2 /n sub C sub H sub sub 4) were investigated using Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. The deposition rate of the films abruptly decreased upon increasing the n sub N sub 2 /n sub C sub H sub sub 4 ratio. However, for n sub N sub 2 /n sub C sub H sub sub 4 >0.5, the deposition rate slightly decreased with increasing n sub N sub 2 /n sub C sub H sub sub 4. The ratio of N to C (N/C) of the films saturated to 0.25 with increasing n sub N sub 2 /n sub C sub H sub sub 4. The numbers of N-H and C ident to N bonds in the films increased with increasing n sub N sub 2 /n sub C sub H sub sub 4 , but the number of C-H bonds decreased. The optical band-gap energy of the films decreased from 2.53 eV to 2.3 eV as t...

  11. Effect of plasma parameters on characteristics of silicon nitride film deposited by single and dual frequency plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Sahu, B. B.; Yin, Yongyi; Han, Jeon G.

    2016-03-01

    This work investigates the deposition of hydrogenated amorphous silicon nitride films using various low-temperature plasmas. Utilizing radio-frequency (RF, 13.56 MHz) and ultra-high frequency (UHF, 320 MHz) powers, different plasma enhanced chemical vapor deposition processes are conducted in the mixture of reactive N2/NH3/SiH4 gases. The processes are extensively characterized using different plasma diagnostic tools to study their plasma and radical generation capabilities. A typical transition of the electron energy distribution function from single- to bi-Maxwellian type is achieved by combining RF and ultra-high powers. Data analysis revealed that the RF/UHF dual frequency power enhances the plasma surface heating and produces hot electron population with relatively low electron temperature and high plasma density. Using various film analysis methods, we have investigated the role of plasma parameters on the compositional, structural, and optical properties of the deposited films to optimize the process conditions. The presented results show that the dual frequency power is effective for enhancing dissociation and ionization of neutrals, which in turn helps in enabling high deposition rate and improving film properties.

  12. Effect of nickel oxide seed layers on annealed-amorphous titanium oxide thin films prepared using plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Cheng-Yang; Hong, Shao-Chyang [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China); Hwang, Fu-Tsai [Department of Electro-Optical Engineering, National United University, Miao-Li, 36003, Taiwan (China); Lai, Li-Wen [ITRI South, Industrial Technology Research Institute, Liujia, Tainan, 73445, Taiwan (China); Lin, Tan-Wei [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China); Liu, Day-Shan, E-mail: dsliu@sunws.nfu.edu.tw [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China)

    2011-10-31

    The effect of a nickel oxide (NiO{sub x}) seed layer on the crystallization and photocatalytic activity of the sequentially plasma-enhanced chemical vapor deposited amorphous titanium oxide (TiO{sub x}) thin film processed by a post-annealing process was investigated. The evolution of the crystalline structures, chemical bond configurations, and surface/cross-sectional morphologies of the annealed TiO{sub x} films, with and without a NiO{sub x} seed layer, was examined using X-ray diffractometer, Fourier transform infrared spectrometry, X-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscope measurements. Thermo- and photo-induced hydrophilicity was determined by measuring the contact angle of water droplet. Photocatalytic activity after UV light irradiation was evaluated from the decolorization of a methylene blue solution. The crystallization temperature of the TiO{sub x} film, deposited on a NiO{sub x} seed layer, was found to be lower than that of a pure TiO{sub x} film, further improving the thermo- and photo-induced surface super-hydrophilicity. The TiO{sub x} film deposited onto the NiO{sub x} seed layer, resulting in significant cluster boundaries, showed a rough surface morphology and proved to alleviate the anatase crystal growth by increasing the post-annealing temperature, which yielded a more active surface area and prohibited the recombination of photogenerated electrons and holes. The photocatalytic activity of the NiO{sub x}/TiO{sub x} system with such a textured surface therefore was enhanced and optimized through an adequate post-annealing process.

  13. Plasma-enhanced Deposition of Nano-Structured Carbon Films

    Institute of Scientific and Technical Information of China (English)

    Yang Qiaoqin (杨巧勤); Xiao Chijin (肖持进); A. Hirose

    2005-01-01

    By pre-treating substrate with different methods and patterning the catalyst, selective and patterned growth of diamond and graphitic nano-structured carbon films have been realized through DC Plasma-Enhanced Hot Filament Chemical Vapor Deposition (PE-HFCVD).Through two-step processing in an HFCVD reactor, novel nano-structured composite diamond films containing a nanocrystalline diamond layer on the top of a nanocone diamond layer have been synthesized. Well-aligned carbon nanotubes, diamond and graphitic carbon nanocones with controllable alignment orientations have been synthesized by using PE-HFCVD. The orientation of the nanostructures can be controlled by adjusting the working pressure. In a Microwave Plasma Enhanced Chemical Vapor Deposition (MW-PECVD) reactor, high-quality diamond films have been synthesized at low temperatures (310 ℃~550 ℃) without adding oxygen or halogen gas in a newly developed processing technique. In this process, carbon source originates from graphite etching, instead of hydrocarbon. The lowest growth temperature for the growth of nanocrystalline diamond films with a reasonable growth rate without addition of oxygen or halogen is 260 ℃.

  14. Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application.

    Science.gov (United States)

    Chao, Chung-Hua; Wei, Da-Hua

    2015-10-03

    In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto silicon (Si) substrates via different synthesized temperatures by using plasma enhanced chemical vapor deposition (PECVD) system. The effects of different synthesized temperatures on the crystal structure, surface morphologies and optical properties have been investigated. The X-ray diffraction (XRD) patterns indicated that the intensity of (0002) diffraction peak became stronger with increasing synthesized temperature until 400 (o)C. The diffraction intensity of (0002) peak gradually became weaker accompanying with appearance of (10-10) diffraction peak as the synthesized temperature up to excess of 400 (o)C. The RT photoluminescence (PL) spectra exhibited a strong near-band-edge (NBE) emission observed at around 375 nm and a negligible deep-level (DL) emission located at around 575 nm under high c-axis ZnO thin films. Field emission scanning electron microscopy (FE-SEM) images revealed the homogeneous surface and with small grain size distribution. The ZnO thin films have also been synthesized onto glass substrates under the same parameters for measuring the transmittance. For the purpose of ultraviolet (UV) photodetector application, the interdigitated platinum (Pt) thin film (thickness ~100 nm) fabricated via conventional optical lithography process and radio frequency (RF) magnetron sputtering. In order to reach Ohmic contact, the device was annealed in argon circumstances at 450 (o)C by rapid thermal annealing (RTA) system for 10 min. After the systematic measurements, the current-voltage (I-V) curve of photo and dark current and time-dependent photocurrent response results exhibited a good responsivity and reliability, indicating that the high c-axis ZnO thin film is a suitable sensing layer for UV photodetector application.

  15. Impact of In doping on GeTe phase-change materials thin films obtained by means of an innovative plasma enhanced metalorganic chemical vapor deposition process

    Science.gov (United States)

    Szkutnik, P. D.; Aoukar, M.; Todorova, V.; Angélidès, L.; Pelissier, B.; Jourde, D.; Michallon, P.; Vallée, C.; Noé, P.

    2017-03-01

    We investigated the deposition and the phase-change properties of In-doped GeTe thin films obtained by plasma enhanced metalorganic chemical vapor deposition and doped with indium using a solid delivery system. The sublimated indium precursor flow rate was calculated as a function of sublimation and deposition parameters. Indium related optical emission recorded by means of optical emission spectroscopy during deposition plasma allowed proposing the dissociation mechanisms of the [In(CH3)2N(CH3)2]2 solid precursor. In particular, using an Ar + H2 + NH3 deposition plasma, sublimated indium molecules are completely dissociated and do not induce by-product contamination by addition of nitrogen or carbon in the films. X-ray photoelectron spectroscopy evidences the formation of In-Te bonds in amorphous as-deposited In-doped GeTe films. The formation of an InTe phase after 400 °C annealing is also evidenced by means of X-ray diffraction analysis. The crystallization temperature Tx, deduced from monitoring of optical reflectivity of In-doped GeTe films with doping up to 11 at. % slightly varies as a function of the In dopant level with a decrease of Tx down to a minimum value for an In doping level of about 6-8 at. %. In this In doping range, the structure of crystallized In-GeTe films changes and is dominated by the presence of a crystalline In2Te3 phase. Finally, the Kissinger activation energy for crystallization Ea is showing to monotonically decrease as the indium content in the GeTe film is increased indicating a promising effect of In doping on crystallization speed in memory devices while keeping a good thermal stability for data retention.

  16. Characterization of amorphous hydrogenated carbon formed by low-pressure inductively coupled plasma enhanced chemical vapor deposition using multiple low-inductance antenna units.

    Science.gov (United States)

    Tsuda, Osamu; Ishihara, Masatou; Koga, Yoshinori; Fujiwara, Shuzo; Setsuhara, Yuichi; Sato, Naoyuki

    2005-03-24

    Three-dimensional plasma enhanced chemical vapor deposition (CVD) of hydrogenated amorphous carbon (a-C:H) has been demonstrated using a new type high-density volumetric plasma source with multiple low-inductance antenna system. The plasma density in the volume of phi 200 mm x 100 mm is 5.1 x 10(10) cm(-3) within +/-5% in the lateral directions and 5.2 x 10(10)cm(-3) within +/-10% in the axial direction for argon plasma under the pressure of 0.1 Pa and the total power as low as 400 W. The uniformity of the thickness and refractive index is within +/-3.5% and +/-1%, respectively, for the a-C:H films deposited on the substrates placed on the six side walls, the top of the phi 60 mm x 80 mm hexagonal substrate holder in the pure toluene plasma under the pressure is as low as 0.04 Pa, and the total power is as low as 300 W. It is also found that precisely controlled ion bombardment by pulse biasing led to the explicit observation in Raman and IR spectra of the transition from polymer-like structure to diamond-like structure accompanied by dehydrogenation due to ion bombardment. Moreover, it is also concluded that the pulse biasing technique is effective for stress reduction without a significant degradation of hardness. The stress of 0.6 GPa and the hardness of 15 GPa have been obtained for 2.0 microm thick films deposited with the optimized deposition conditions. The films are durable for the tribology test with a high load of 20 N up to more than 20,000 cycles, showing the specific wear rate and the friction coefficient were 1.2 x 10(-7) mm3/Nm and 0.04, respectively.

  17. Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Bo-Heng [Instrument Technology Research Center, National Applied Research Laboratories, Taiwan (China); Huang, Hung Ji, E-mail: hjhuang@itrc.narl.org.tw [Instrument Technology Research Center, National Applied Research Laboratories, Taiwan (China); Huang, Sheng-Hsin [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Hsiao, Chien-Nan [Instrument Technology Research Center, National Applied Research Laboratories, Taiwan (China)

    2014-09-01

    The inductively coupled plasma-enhanced atomic layer deposition (PEALD) method was used to fabricate ultrathin and smooth Pt thin films at low temperatures without the use of a Pt seed layer. The Pt thin metal films deposited at 200 °C onto Si and glass substrates exhibited high conductivities (< 12 μΩ cm for films with a thickness greater than 8 nm) and thermal stabilities resembling those of the bulk material. The measured density of the deposited Pt thin films was 20.7 ± 6 g/cm{sup 3}. X-ray photoelectron spectra of the films showed clear 4f peaks (74.3 eV (4f{sub 5/2}) and 71.1 eV (4f{sub 7/2})), and X-ray diffraction measurements showed the (111) peak of the fcc structure. The deposited Pt layers were in crystal form. The 25.5-nm Pt films coated onto 170-nm-wide trench structures (aspect ratio of 3.5:1) exhibited good step coverage. The PEALD-deposited Pt thin films were chemically stable under high-temperature light illumination and could serve as catalysts under strongly alkaline conditions (pH = 12) during the long-term oxidization of ammonium ions. - Highlights: • Inductively coupled plasma applied to enhance atomic layer deposition (PEALD) • Smooth Pt films fabricated by PEALD at low temperature • 8-nm Pt shows clear metal peaks in XPS and XRD. • 8-nm Pt shows low electrical resistivity of 16 μΩ cm. • 8-nm Pt shows stability under strong light and pH = 12 wash by NH{sub 4}{sup +}/NaOH solution.

  18. A comparative study of nitrogen plasma effect on field emission characteristics of single wall carbon nanotubes synthesized by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Kumar, Avshish; Parveen, Shama; Husain, Samina; Ali, Javid; Zulfequar, Mohammad; Harsh; Husain, Mushahid

    2014-12-01

    Vertically aligned single wall carbon nanotubes (SWCNTs) with large scale control of diameter, length and alignment have successfully been grown by plasma enhanced chemical vapor deposition (PECVD) system. The nickel (Ni) as catalyst deposited on silicon (Si) substrate was used to grow the SWCNTs. Field emission (FE) characteristics of the as grown SWCNTs were measured using indigenously designed setup in which a diode is configured in such a way that by applying negative voltage on the copper plate (cathode) with respect to stainless steel anode plate, current density can be recorded. To measure the FE characteristics, SWCNTs film pasted on the copper plate with silver epoxy was used as electron emitter source. The effective area of anode was ∼78.5 mm2 for field emission measurements. The emission measurements were carried out under high vacuum pressure of the order of 10-6 Torr to minimize the electron scattering and degradation of the emitters. The distance between anode and cathode was kept 500 μm (constant) during entire field emission studies. The grown SWCNTs are excellent field emitters, having emission current density higher than 25 mA/cm2 at turn-on field 1.3 V/μm. In order to enhance the field emission characteristics, the as grown SWCNTs have been treated under nitrogen (N2) plasma for 5 min and again field emission characteristics have been measured. The N2 plasma treated SWCNTs show a good enhancement in the field emission properties with emission current density 81.5 mA/cm2 at turn on field 1.2 V/μm. The as-grown and N2 plasma treated SWCNTs were also characterized by field emission scanning electron microscope (FESEM), high resolution transmission electron microscope (HRTEM), Raman spectrometer, Fourier transform infrared spectrometer (FTIR) and X-ray photoelectron spectroscopy (XPS).

  19. High-temperature degradation in plasma-enhanced chemical vapor deposition Al{sub 2}O{sub 3} surface passivation layers on crystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Kühnhold, Saskia [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, D-79110 Freiburg (Germany); Freiburg Materials Research Center FMF, Albert-Ludwigs-Universität Freiburg, Stefan-Meier-Straße 21 (Germany); Saint-Cast, Pierre; Kafle, Bishal; Hofmann, Marc [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, D-79110 Freiburg (Germany); Colonna, Francesco [Freiburg Materials Research Center FMF, Albert-Ludwigs-Universität Freiburg, Stefan-Meier-Straße 21 (Germany); Fraunhofer Institute for Mechanics of Materials IWM, Wöhlerstraße 11, 79108 Freiburg (Germany); Zacharias, Margit [Department of Microsystems Engineering IMTEK, Albert-Ludwigs-Universität Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg (Germany)

    2014-08-07

    In this publication, the activation and degradation of the passivation quality of plasma-enhanced chemical vapor deposited aluminum oxide (Al{sub 2}O{sub 3}) layers with different thicknesses (10 nm, 20 nm, and 110 nm) on crystalline silicon (c-Si) during long and high temperature treatments are investigated. As indicated by Fourier Transform Infrared Spectroscopy, the concentration of tetrahedral and octahedral sites within the Al{sub 2}O{sub 3} layer changes during temperature treatments and correlates with the amount of negative fixed charges at the Si/Al{sub 2}O{sub 3} interface, which was detected by Corona Oxide Characterization of Semiconductors. Furthermore, during a temperature treatment at 820 °C for 30 min, the initial amorphous Al{sub 2}O{sub 3} layer crystallize into the γ-Al{sub 2}O{sub 3} structure and was enhanced by additional oxygen as was proven by x-ray diffraction measurements and underlined by Density Functional Theory simulations. The crystallization correlates with the increase of the optical density up to 20% while the final Al{sub 2}O{sub 3} layer thickness decreases at the same time up to 26%. All observations described above were detected to be Al{sub 2}O{sub 3} layer thickness dependent. These observations reveal novel aspects to explain the temperature induced passivation and degradation mechanisms of Al{sub 2}O{sub 3} layers at a molecular level like the origin of the negative fixe charges at the Si/SiO{sub x}/Al{sub 2}O{sub 3} interface or the phenomena of blistering. Moreover, the crystal phase of Al{sub 2}O{sub 3} does not deliver good surface passivation due to a high concentration of octahedral sites leading to a lower concentration of negative fixed charges at the interface.

  20. Nanocrystalline silicon and silicon quantum dots formation within amorphous silicon carbide by plasma enhanced chemical vapour deposition method controlling the Argon dilution of the process gases

    Energy Technology Data Exchange (ETDEWEB)

    Kole, Arindam; Chaudhuri, Partha, E-mail: erpc@iacs.res.in

    2012-11-01

    Structural and optical properties of the amorphous silicon carbide (a-SiC:H) thin films deposited by radio frequency plasma enhanced chemical vapour deposition method from a mixture of silane (SiH{sub 4}) and methane (CH{sub 4}) diluted in argon (Ar) have been studied with variation of Ar dilution from 94% to 98.4%. It is observed that nanocrystalline silicon starts to form within the a-SiC:H matrix by increasing the dilution to 96%. With further increase in Ar dilution to 98% formation of the silicon nanocrystals (nc-Si) with variable size is enhanced. The optical band gap (E{sub g}) of the a-SiC:H film decreases from 2.0 eV to 1.9 eV with increase in Ar dilution from 96% to 98% as the a-SiC:H films gradually become Si rich. On increasing the Ar dilution further to 98.4% leads to the appearance of crystalline silicon quantum dots (c-Si q-dots) of nearly uniform size of 3.5 nm. The quantum confinement effect is apparent from the sharp increase in the E{sub g} value to 2.6 eV. The phase transformation phenomenon from nc-Si within the a-SiC:H films to Si q-dot were further studied by high resolution transmission electron microscopy and the grazing angle X-ray diffraction spectra. A relaxation in the lattice strain has been observed with the formation of Si q-dots.

  1. Plasma enhanced diamond deposition on steel and Si substrates

    Institute of Scientific and Technical Information of China (English)

    Y.S. Li; Y. Tang; W. Chen; Q. Yang; C. Xiao; A. Hirose

    2009-01-01

    Diamond growth on Fe-Cr-Al-Si steel and Si substrates was comparatively investigated in microwave plasma enhanced chemical vapor deposition (MPCVD) reactor with different deposition parameters. Adherent nanocrystalline diamond films were directly deposited on this steel substrate under a typical deposition condition, whereas microcrystalline diamond films were produced on Si wafer. With increasing CH4 concentration, reaction pressure, or the total gas flow rate, the quality of nanocrystalline diamond films formed on Fe-Cr-Al-Si substrates is gradually deteriorated in terms of density and adhesion. This impaired diamond quality on steels is primarily associated with a combined effect by the substrate composition and the specific process conditions that favor excessive nucleation of diamond.

  2. Metallo–organic compound-based plasma enhanced CVD of ZrO2 films for microelectronic applications

    Indian Academy of Sciences (India)

    S Chatterjee; S K Samanta; H D Banerjee; C K Maiti

    2001-12-01

    ZrO2 films on silicon wafer were deposited by microwave plasma enhanced chemical vapour deposition technique using zirconium tetratert butoxide (ZTB). The structure and composition of the deposited layers were studied by fourier transform infrared spectroscopy (FTIR). The deposition rates were also studied. MOS capacitors fabricated using deposited oxides were used to characterize the electrical properties of ZrO2 films. The films showed their suitability for microelectronic applications.

  3. Direct imaging of mechanical and chemical gradients across the thickness of graded organosilicone microwave PECVD coatings.

    Science.gov (United States)

    Hall, Colin J; Murphy, Peter J; Griesser, Hans J

    2014-01-22

    The characterization of variations in the chemical composition and ensuing mechanical properties across the thickness of coatings with continuously varying compositions through their thickness (graded coatings) presents considerable challenges for current analytical techniques in materials science. We report here the direct imaging of nanomechanical and chemical gradients across cross-sections of an organosilicone coating fabricated via microwave plasma enhanced chemical vapor deposition (PECVD). Cross-sectional nanoindentation was used to determine the mechanical properties of uniform and graded organosilicone coatings. Both hardness and modulus across the coatings were directly measured. Additionally, "modulus mapping" on cross-sections was used to map the complex modulus. For the graded coating, it was found that variations in the complex modulus was predominantly due to varying storage modulus. It was observed that at the interface with the substrate there was a low storage modulus, which linearly increased to a relatively high storage modulus at the surface. It is proposed that the increase in stiffness, from the substrate interface to the outer surface, is due to the increasing content of a cross-linked O-Si-O network. This mechanical gradient has been linked to a change in the Si:O ratio via direct compositional mapping using ToF-SIMS. Direct mapping of the mechanical and compositional gradients across these protective coatings provides insight into the changes in properties with depth and supports optimization of the critical mechanical performance of PECVD graded coatings.

  4. Study on the key problems of interaction between microwave and chemical reaction

    Institute of Scientific and Technical Information of China (English)

    YANG Xiaoqing; HUANG Kama

    2007-01-01

    Microwave has been found as an efficient heating method in chemical industry.However,in present days the interaction between microwave and chemical reactions has not been deeply understood,which restricts a wider application of high power microwave in chemical industry.In this Paper,the key problems of interaction between microwave and chemical reaction are investigated,such as complex effective permittivity of chemical reaction,simulation of microwave heating on chemical reaction and non-thermal effect of microwave,which will enhance further knowledge of the mechanism of interaction between microwave and chemical reaction.Moreover,such an analysis is beneficial for handling with difficulties in application of microwave chemical industry.

  5. Frequency-dependent capacitance-voltage and conductance-voltage characteristics of low-dielectric-constant SiOC(-H) thin films deposited by using plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chang Young; Lee, Heang Seuk; Woo, Jong Kwan; Choi, Chi Kyu; Lee, Kwang Man; Hyun, Myung Taek [Jeju National University, Jeju (Korea, Republic of); Navamathavan, Rangaswamy [Chonbuk National University, Chonju (Korea, Republic of)

    2010-12-15

    We report on the electrical characteristics of the metal-insulator-semiconductor (MIS) structure of low-dielectric-constant SiOC(-H) films. SiOC(-H) thin films were deposited on p-Si(100) substrates by using a plasma-enhanced chemical vapor deposition (PECVD) system. The frequency dependence of the capacitance-voltage (C-V) and the conductance-voltage (G/{omega}-V) characteristics of the A1/SiOC(-H)/p-Si(100)/Al MIS structures was analyzed. C-V and G/{omega}-V measurements were carried out over a frequency range of 1 kHz to 5 MHz. Based on our analysis, the C-V and the G/{omega}-V characteristics confirmed that the surface states and the series resistance were important parameters that strongly influenced the electrical properties of the A1/SiOC(-H)/p-Si(100)/Al MIS structures.

  6. Excitation mechanism and thermal emission quenching of Tb ions in silicon rich silicon oxide thin films grown by plasma-enhanced chemical vapour deposition—Do we need silicon nanoclusters?

    Energy Technology Data Exchange (ETDEWEB)

    Podhorodecki, A., E-mail: artur.p.podhorodecki@pwr.wroc.pl; Golacki, L. W.; Zatryb, G.; Misiewicz, J. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Wang, J.; Jadwisienczak, W. [School of EECS, Ohio University, Stocker Center 363, Athens, Ohio 45701 (United States); Fedus, K. [Institute of Physics, Nicholas Copernicus University, Grudziadzka 5/7, 87-100 Torun (Poland); Wojcik, J.; Wilson, P. R. J.; Mascher, P. [Department of Engineering Physics and Centre for Emerging Device Technologies, McMaster University, 1280 Main St. W, Hamilton, Ontario L8S4L7 (Canada)

    2014-04-14

    In this work, we will discuss the excitation and emission properties of Tb ions in a Silicon Rich Silicon Oxide (SRSO) matrix obtained at different technological conditions. By means of electron cyclotron resonance plasma-enhanced chemical vapour deposition, undoped and doped SRSO films have been obtained with different Si content (33, 35, 39, 50 at. %) and were annealed at different temperatures (600, 900, 1100 °C). The samples were characterized optically and structurally using photoluminescence (PL), PL excitation, time resolved PL, absorption, cathodoluminescence, temperature dependent PL, Rutherford backscattering spectrometry, Fourier transform infrared spectroscopy and positron annihilation lifetime spectroscopy. Based on the obtained results, we discuss how the matrix modifications influence excitation and emission properties of Tb ions.

  7. Impacts of light illumination on monocrystalline silicon surfaces passivated by atomic layer deposited Al2O3 capped with plasma-enhanced chemical vapor deposited SiN x

    Science.gov (United States)

    Lin, Fen; Toh, Mei Gi; Thway, Maung; Li, Xinhang; Nandakumar, Naomi; Gay, Xavier; Dielissen, Bas; Raj, Samuel; Aberle, Armin G.

    2017-08-01

    In this work, we investigate the impact of light illumination on crystalline silicon surfaces passivated with inline atomic layer deposited aluminum oxide capped with plasma-enhanced chemical vapor deposited silicon nitride. It is found that, for dedicated n-type lifetime samples under illumination, there is no light induced degradation (LID) but enhanced passivation. The lifetime increase happened with a much faster speed compared to the lifetime decay during dark storage, resulting in the overall lifetime enhancement for actual field application scenarios (sunshine during the day and darkness during the night). In addition, it was found that the lifetime enhancement is spectrally dependent and mainly associated with the visible part of the solar spectrum. Hence, it has negligible impact for such interfaces applied on the rear of the solar cells, for example p-type aluminum local back surface field (Al-LBSF) cells.

  8. Chemical vapor deposition coating of fibers using microwave application

    Science.gov (United States)

    Barmatz, Martin B. (Inventor); Hoover, Gordon (Inventor); Jackson, Henry W. (Inventor)

    2000-01-01

    Chemical vapor deposition coating is carried out in a cylindrical cavity. The fibers are heated by a microwave source that is uses a TM0N0 mode, where O is an integer, and produces a field that depends substantially only on radius. The fibers are observed to determine their heating, and their position can be adjusted. Once the fibers are uniformly heated, a CVD reagent is added to process the fibers.

  9. Sub-micro a-C:H patterning of silicon surfaces assisted by atmospheric-pressure plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Boileau, Alexis; Gries, Thomas; Noël, Cédric; Perito Cardoso, Rodrigo; Belmonte, Thierry

    2016-11-01

    Micro and nano-patterning of surfaces is an increasingly popular challenge in the field of the miniaturization of devices assembled via top-down approaches. This study demonstrates the possibility of depositing sub-micrometric localized coatings—spots, lines or even more complex shapes—made of amorphous hydrogenated carbon (a-C:H) thanks to a moving XY stage. Deposition was performed on silicon substrates using chemical vapor deposition assisted by an argon atmospheric-pressure plasma jet. Acetylene was injected into the post-discharge region as a precursor by means of a glass capillary with a sub-micrometric diameter. A parametric study was carried out to study the influence of the geometric configurations (capillary diameter and capillary-plasma distance) on the deposited coating. Thus, the patterns formed were investigated by scanning electron microscopy and atomic force microscopy. Furthermore, the chemical composition of large coated areas was investigated by Fourier transform infrared spectroscopy according to the chosen atmospheric environment. The observed chemical bonds show that reactions of the gaseous precursor in the discharge region and both chemical and morphological stability of the patterns after treatment are strongly dependent on the surrounding gas. Various sub-micrometric a-C:H shapes were successfully deposited under controlled atmospheric conditions using argon as inerting gas. Overall, this new process of micro-scale additive manufacturing by atmospheric plasma offers unusually high-resolution at low cost.

  10. Rapid synthesis of tantalum oxide dielectric films by microwave microwave-assisted atmospheric chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ndiege, Nicholas [School of Chemical Sciences, University of Illinois at Urbana-Champaign, 600 South Mathews Avenue, Urbana, IL 61801 (United States)], E-mail: ndiege@uiuc.edu; Subramanian, Vaidyanathan [School of Chemical Sciences, University of Illinois at Urbana-Champaign, 600 South Mathews Avenue, Urbana, IL 61801 (United States)], E-mail: ravisv@unr.edu; Shannon, Mark A. [Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, 1206 West Green street, Urbana, IL 61801 (United States)], E-mail: mshannon@uiuc.edu; Masel, Richard I. [School of Chemical Sciences, University of Illinois at Urbana-Champaign, 600 South Mathews Avenue, Urbana, IL 61801 (United States)], E-mail: r-masel@uiuc.edu

    2008-10-01

    Microwave-assisted chemical vapor deposition has been used to generate high quality, high-k dielectric films on silicon at high deposition rates with film thicknesses varying from 50 nm to 110 {mu}m using inexpensive equipment. Characterization of the post deposition products was performed by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Raman spectroscopy. Film growth was determined to occur via rapid formation and accumulation of tantalum oxide clusters from tantalum (v) ethoxide (Ta(OC{sub 2}H{sub 5}){sub 5}) vapor on the deposition surface.

  11. Material design of plasma-enhanced chemical vapour deposition SiCH films for low-k cap layers in the further scaling of ultra-large-scale integrated devices-Cu interconnects

    Directory of Open Access Journals (Sweden)

    Hideharu Shimizu, Shuji Nagano, Akira Uedono, Nobuo Tajima, Takeshi Momose and Yukihiro Shimogaki

    2013-01-01

    Full Text Available Cap layers for Cu interconnects in ultra-large-scale integrated devices (ULSIs, with a low dielectric constant (k-value and strong barrier properties against Cu and moisture diffusion, are required for the future further scaling of ULSIs. There is a trade-off, however, between reducing the k-value and maintaining strong barrier properties. Using quantum mechanical simulations and other theoretical computations, we have designed ideal dielectrics: SiCH films with Si–C2H4–Si networks. Such films were estimated to have low porosity and low k; thus they are the key to realizing a cap layer with a low k and strong barrier properties against diffusion. For fabricating these ideal SiCH films, we designed four novel precursors: isobutyl trimethylsilane, diisobutyl dimethylsilane, 1, 1-divinylsilacyclopentane and 5-silaspiro [4,4] noname, based on quantum chemical calculations, because such fabrication is difficult by controlling only the process conditions in plasma-enhanced chemical vapor deposition (PECVD using conventional precursors. We demonstrated that SiCH films prepared using these newly designed precursors had large amounts of Si–C2H4–Si networks and strong barrier properties. The pore structure of these films was then analyzed by positron annihilation spectroscopy, revealing that these SiCH films actually had low porosity, as we designed. These results validate our material and precursor design concepts for developing a PECVD process capable of fabricating a low-k cap layer.

  12. Surface chemistry of the preferred (111) and (220) crystal oriented microcrystalline Si films by radio-frequency plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ohba, Daisuke; Koshino, Hideto; Tang, Zeguo; Shirai, Hajime [Graduate School of Science and Engineering, Saitama University, Sakura (Japan)

    2011-10-15

    The surface chemistry of the preferentially (111) and (220) crystal orientated chlorinated hydrogenated microcrystalline silicon ({mu}c-Si:H:Cl) films was studied using a rf PE-CVD of a dichlorosilane (SiH{sub 2}Cl{sub 2}) and H{sub 2} mixture. The growing surface for the preferentially (220) crystal oriented {mu}c-Si:H:Cl films included much voids and dangling bonds, whereas the growing surface with the preferential (111) crystal orientation was chemically stable relatively. These findings suggest that the sticking process of deposition precursors and/or the reconstruction of Si clusters within the sub-surface determine the preferential crystal orientation. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Formation of size-controlled silicon nanocrystals in plasma enhanced chemical vapor deposition grown SiO{sub x}N{sub y}/SiO{sub 2} superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Hartel, A.M., E-mail: andreas.hartel@imtek.uni-freiburg.de [IMTEK, Faculty of Engineering, Albert-Ludwigs-University Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Hiller, D.; Gutsch, S. [IMTEK, Faculty of Engineering, Albert-Ludwigs-University Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Loeper, P. [Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, 79110 Freiburg (Germany); Estrade, S. [MIND-IN2UB, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); TEM-MAT, SCT- UB, Sole i Sabaris 1, 08028 Barcelona (Spain); Peiro, F.; Garrido, B. [MIND-IN2UB, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Zacharias, M. [IMTEK, Faculty of Engineering, Albert-Ludwigs-University Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany)

    2011-10-31

    Size controlled silicon nanocrystals (SiNC) in silicon oxynitride matrix were prepared using plasma enhanced chemical vapor deposition. The as-deposited superlattices (SLs) and the corresponding bulk films were treated by thermal annealing. Hydrogen effusion was performed during the heating up by choosing a sufficiently low heating ramp. The phase separation of the layers into SiNCs and surrounding oxynitride matrix was studied at temperatures of up to 1150 {sup o}C. The influence of the annealing temperature on SiO{sub x}N{sub y}/SiO{sub 2} - SLs with varying SiO{sub x}N{sub y} layer thickness was investigated by several analytical techniques including variable angle spectroscopic ellipsometry, photoluminescence (PL) spectroscopy, x-ray photoelectron spectroscopy, Fourier transform infrared spectrometry (FTIR) and transmission electron microscopy (TEM). Before annealing FTIR investigations show in addition to the expected Si-O bonds also the formation of nitrogen and hydrogen related bonds. The shift of the Si-O-Si stretching vibration to higher wave numbers after annealing indicates phase separation. The disappearance of the hydrogen related bonds indicates the hydrogen effusion. The PL signal is rising significantly with increasing annealing temperature and the PL peak position is strongly related to the thickness of the SiO{sub x}N{sub y} sublayers due to quantum confinement effects. TEM investigations confirm the size-controlled growth of SiNCs within the oxynitride matrix. The role of incorporated nitrogen and hydrogen is discussed.

  14. Effect of Microwave Radiation on Enzymatic and Chemical Peptide Bond Synthesis on Solid Phase

    Directory of Open Access Journals (Sweden)

    Alessandra Basso

    2009-01-01

    Full Text Available Peptide bond synthesis was performed on PEGA beads under microwave radiations. Classical chemical coupling as well as thermolysin catalyzed synthesis was studied, and the effect of microwave radiations on reaction kinetics, beads' integrity, and enzyme activity was assessed. Results demonstrate that microwave radiations can be profitably exploited to improve reaction kinetics in solid phase peptide synthesis when both chemical and biocatalytic strategies are used.

  15. A nucleation and growth model of vertically-oriented carbon nanofibers or nanotubes by plasma-enhanced catalytic chemical vapor deposition.

    Science.gov (United States)

    Cojocaru, C S; Senger, A; Le Normand, F

    2006-05-01

    Carbon nanofibers are grown by direct current and hot filaments-activated catalytic chemical vapor deposition while varying the power of the hot filaments. Observations of these carbon nanofibers vertically oriented on a SiO2 (8 nm thick)/Si(100) substrate covered with Co nanoparticles (10-15 nm particle size) by Scanning Electron and Transmission Electron Microscopies show the presence of a graphitic "nest" either on the surface of the substrate or at the end of the specific nanofiber that does not encapsulate the catalytic particle. Strictly in our conditions, the activation by hot filaments is required to grow nanofibers with a C2H2 - H2 gas mixture, as large amounts of amorphous carbon cover the surface of the substrate without using hot filaments. From these observations as well as data of the literature, it is proposed that the nucleation of carbon nanofibers occurs through a complex process involving several steps: carbon concentration gradient starting from the catalytic carbon decomposition and diffusion from the surface of the catalytic nanoparticles exposed to the activated gas and promoted by energetic ionic species of the gas phase; subsequent graphitic condensation of a "nest" at the interface of the Co particle and substrate. The large concentration of highly reactive hydrogen radicals mainly provided by activation with hot filaments precludes further spreading out of this interfacial carbon nest over the entire surface of the substrate and thus selectively orientates the growth towards the condensation of graphene over facets that are perpendicular to the surface. Carbon nanofibers can then be grown within the well-known Vapor-Liquid-Solid process. Thus the effect of energetic ions and highly reactive neutrals like atomic hydrogen in the preferential etching of carbon on the edge of graphene shells and on the broadening of the carbon nanofiber is underlined.

  16. Microwave processing of epoxy resins and synthesis of carbon nanotubes by microwave plasma chemical vapor deposition

    Science.gov (United States)

    Zong, Liming

    Microwave processing of advanced materials has been studied as an attractive alternative to conventional thermal processing. In this dissertation, work was preformed in four sections. The first section is a review on research status of microwave processing of polymer materials. The second section is investigation of the microwave curing kinetics of epoxy resins. The curing of diglycidyl ether of bisphenol A (DGEBA) and 3, 3'-diaminodiphenyl sulfone (DDS) system under microwave radiation at 145 °C was governed by an autocatalyzed reaction mechanism. A kinetic model was used to describe the curing progress. The third section is a study on dielectric properties of four reacting epoxy resins over a temperature range at 2.45 GHz. The epoxy resin was DGEBA. The four curing agents were DDS, Jeffamine D-230, m-phenylenediamine, and diethyltoluenediamine. The mixtures of DGEBA and the four curing agents were stoichiometric. The four reacting systems were heated under microwave irradiation to certain cure temperatures. Measurements of temperature and dielectric properties were made during free convective cooling of the samples. The cooled samples were analyzed with a Differential Scanning Calorimeter to determine the extents of cure. The Davidson-Cole model can be used to describe the dielectric data. A simplified Davidson-Cole expression was proposed to calculate the parameters in the Davidson-Cole model and describe the dielectric properties of the DGEBA/DDS system and part of the dielectric data of the other three systems. A single relaxation model was used with the Arrhenius expression for temperature dependence to model the results. The evolution of all parameters in the models during cure was related to the decreasing number of the epoxy and amine groups in the reactants and the increasing viscosity of the reacting systems. The last section is synthesis of carbon nanotubes (CNTs) on silicon substrate by microwave plasma chemical vapor deposition of a gas mixture of

  17. Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) yields better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD).

    Science.gov (United States)

    Böke, Frederik; Giner, Ignacio; Keller, Adrian; Grundmeier, Guido; Fischer, Horst

    2016-07-20

    Densely sintered aluminum oxide (α-Al2O3) is chemically and biologically inert. To improve the interaction with biomolecules and cells, its surface has to be modified prior to use in biomedical applications. In this study, we compared two deposition techniques for adhesion promoting SiOx films to facilitate the coupling of stable organosilane monolayers on monolithic α-alumina; physical vapor deposition (PVD) by thermal evaporation and plasma enhanced chemical vapor deposition (PE-CVD). We also investigated the influence of etching on the formation of silanol surface groups using hydrogen peroxide and sulfuric acid solutions. The film characteristics, that is, surface morphology and surface chemistry, as well as the film stability and its adhesion properties under accelerated aging conditions were characterized by means of X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), inductively coupled plasma-optical emission spectroscopy (ICP-OES), and tensile strength tests. Differences in surface functionalization were investigated via two model organosilanes as well as the cell-cytotoxicity and viability on murine fibroblasts and human mesenchymal stromal cells (hMSC). We found that both SiOx interfaces did not affect the cell viability of both cell types. No significant differences between both films with regard to their interfacial tensile strength were detected, although failure mode analyses revealed a higher interfacial stability of the PE-CVD films compared to the PVD films. Twenty-eight day exposure to simulated body fluid (SBF) at 37 °C revealed a partial delamination of the thermally deposited PVD films whereas the PE-CVD films stayed largely intact. SiOx layers deposited by both PVD and PE-CVD may thus serve as viable adhesion-promoters for subsequent organosilane coupling agent binding to α-alumina. However, PE-CVD appears to be favorable for long-term direct film exposure to aqueous

  18. Surface functionalization of PET fabric with atmospheric pressure plasma enhanced chemical vapor deposition%常压等离子体增强化学气相沉积法表面功能化聚酯织物

    Institute of Scientific and Technical Information of China (English)

    K. H. Kale; S. S. Palaskar; 刘鹏(译); 罗艳(校)

    2012-01-01

    Plasma technology is emerging as a novel and environmentally friendly technology for surface modification of textile materials. It is possible to deposit very thin film with specific functional properties on the surface of textiles. The current study describes a novel approach for surface modification of 100% polyester textiles with plasma enhanced chemical vapor deposition (PECVD). The chemical and structural nature of plasma polymers deposited at the surface of the samples with respect to discharge power was studied with FTIR spectroscopy. The functional property i. e. water repellency imparted was determined with spray test and contact angle measurement.%对于纺织材料的表面改性来说,等离子体技术正成为一种新兴且环境友好的技术。等离子体技术在纺织品表面可沉积具有特殊功能的薄膜。阐述了一种常压等离子体增强化学气相沉积法表面改性100%聚酯织物的新型方法。通过傅里叶变换红外光谱研究了沉积于样品表面上相对于放电功率的等离子体聚合物化学和结构性质。采用雾化试验和接触角测量赋予织物诸如疏水等的功能特性。

  19. On the intrinsic moisture permeation rate of remote microwave plasma-deposited silicon nitride layers

    NARCIS (Netherlands)

    Assche, F.J.H. Van; Unnikrishnan, S.; Michels, J.J.; Mol, A.M.B. van; Weijer, P. van de; Sanden, M.C.M. van de; Creatore, M.

    2014-01-01

    We report on a low substrate temperature (110°C) remote microwave plasma-enhanced chemical vapor deposition (PECVD) process of silicon nitride barrier layers against moisture permeation for organic light emitting diodes (OLEDs) and other moisture sensitive devices such as organic photovoltaic cells

  20. Characteristics of carbon coatings on optical fibers prepared by radio-frequency plasma enhanced chemical vapor deposition with different H{sub 2}/C{sub 2}H{sub 2} ratios

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Hung-Chien; Yu, Jen-Feng [Department of Materials Science and Engineering, National Chung Hsing University 250 Kuo Kuang Road, Taichung 402, Taiwan (China); Shiue, Sham-Tsong, E-mail: stshiue@dragon.nchu.edu.t [Department of Materials Science and Engineering, National Chung Hsing University 250 Kuo Kuang Road, Taichung 402, Taiwan (China); Lin, Hung-Yi [Mechanical and Systems Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan (China)

    2010-10-01

    Characteristics of carbon coatings on optical fibers prepared by radio-frequency plasma enhanced chemical vapor deposition with different H{sub 2}/C{sub 2}H{sub 2} ratios are investigated. Five kinds of carbon coatings are prepared with H{sub 2}/C{sub 2}H{sub 2} ratios of 2, 4, 6, 8, and 10. Experimental results show that the deposition rate and surface roughness of carbon coatings decrease as the H{sub 2}/C{sub 2}H{sub 2} ratio increases. When the H{sub 2}/C{sub 2}H{sub 2} ratio changes from 2 to 8, the increase of H{sub 2}/C{sub 2}H{sub 2} ratios detrimentally yields sp{sup 3} carbon atoms and sp{sup 3}-CH{sub 3} bonds in the carbon coatings. However, when the H{sub 2}/C{sub 2}H{sub 2} ratio exceeds 8, the hydrogen retards the growth of the graphite structure. Moreover, the redundant hydrogen radicals favor bonding with the dangling bonds in the coating surface. Therefore, when the H{sub 2}/C{sub 2}H{sub 2} ratio increases from 8 to 10, the amounts of sp{sup 3} carbon atoms and sp{sup 3}-CH{sub 3} bonds in the carbon coatings increase. At an H{sub 2}/C{sub 2}H{sub 2} ratio of 8, the carbon coating exhibits excellent water-repellency and thermal-loading resistance, and so this ratio is the best for producing a hermetically sealed optical fiber coating.

  1. Influence of hydrogen dilution on structural, electrical and optical properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films prepared by plasma enhanced chemical vapour deposition (PE-CVD)

    Energy Technology Data Exchange (ETDEWEB)

    Funde, A.M.; Bakr, Nabeel Ali; Kamble, D.K. [School of Energy Studies, University of Pune, Pune 411 007 (India); Hawaldar, R.R.; Amalnerkar, D.P. [Center for Materials for Electronics Technology (C-MET), Panchawati, Pune 411 008 (India); Jadkar, S.R. [Department of Physics, University of Pune, Ganeshkhind Road, Pune 411 007 (India)

    2008-10-15

    Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited from pure silane (SiH{sub 4}) and hydrogen (H{sub 2}) gas mixture by conventional plasma enhanced chemical vapour deposition (PE-CVD) method at low temperature (200 C) using high rf power. The structural, optical and electrical properties of these films are carefully and systematically investigated as a function of hydrogen dilution of silane (R). Characterization of these films with low angle X-ray diffraction and Raman spectroscopy revealed that the crystallite size in the films tends to decrease and at same time the volume fraction of crystallites increases with increase in R. The Fourier transform infrared (FTIR) spectroscopic analysis showed at low values of R, the hydrogen is predominantly incorporated in the nc-Si:H films in the mono-hydrogen (Si-H) bonding configuration. However, with increasing R the hydrogen bonding in nc-Si:H films shifts from mono-hydrogen (Si-H) to di-hydrogen (Si-H{sub 2}) and (Si-H{sub 2}){sub n} complexes. The hydrogen content in the nc-Si:H films decreases with increase in R and was found less than 10 at% over the entire studied range of R. On the other hand, the Tauc's optical band gap remains as high as 2 eV or much higher. The quantum size effect may responsible for higher band gap in nc-Si:H films. A correlation between electrical and structural properties has been found. For optimized deposition conditions, nc-Si:H films with crystallite size {proportional_to}7.67 nm having good degree of crystallinity ({proportional_to}84%) and high band gap (2.25 eV) were obtained with a low hydrogen content (6.5 at%). However, for these optimized conditions, the deposition rate was quite small (1.6 Aa/s). (author)

  2. Effect of etchant concentration on microwave induced chemical etching (MICE) of CR-39 detector

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, G.S. [Health Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Tripathy, S.P., E-mail: sam.tripathy@gmail.com [Health Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Sharma, S.D. [Radiological Physics and Advisor Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Homi Bhabha National Institute, Mumbai 400094 (India); Bandyopadhyay, T. [Health Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Homi Bhabha National Institute, Mumbai 400094 (India)

    2015-11-11

    The recently introduced microwave induced chemical etching (MICE) has been found to be a fast and effective etching technique for CR-39 detector. In the present work, the MICE technique was used to develop the neutron induced recoil tracks in CR-39 detectors. Special attention was paid in carrying out a systematic investigation to study the effect of etchant concentration and microwave power on the development of tracks and various track parameters. NaOH solution of different concentrations, viz. 3–8 N was tested at 300, 450, 600 and 900 W of microwave power. Temperature profiles for 200 ml solution of each concentration were generated to maintain a fixed operating condition for all concentrations at each microwave power. The bulk etch rate was found to increase with the microwave power as well as with the etchant concentration. Empirical relations were established to relate the variation of bulk etch rate with microwave power and etchant concentration.

  3. Microwave Field Applicator Design in Small-Scale Chemical Processing

    NARCIS (Netherlands)

    Sturm, G.S.J.

    2013-01-01

    Ever since the first experiments nearly three decades ago, microwave enhanced chemistry has received incessant scientific attention. Many studies report improved process performance in terms of speed and conversion under microwave exposure and therefore it is recognized as a promising alternative me

  4. Microwave Field Applicator Design in Small-Scale Chemical Processing

    NARCIS (Netherlands)

    Sturm, G.S.J.

    2013-01-01

    Ever since the first experiments nearly three decades ago, microwave enhanced chemistry has received incessant scientific attention. Many studies report improved process performance in terms of speed and conversion under microwave exposure and therefore it is recognized as a promising alternative

  5. Devulcanization of ground tire rubber: Physical and chemical changes after different microwave exposure times

    OpenAIRE

    P. S. Garcia; F. D. B. de Sousa; J.A. Lima; S. A. Cruz; C. H. Scuracchio

    2015-01-01

    Microwave devulcanization is known to be a promising and an efficient rubber recycling method which makes possible for the rubber to regain its fluidity, and makes it capable of being remolded and revulcanized. The focus of this work is to understand the physical and chemical changes that occur in the ground tire rubber after different microwave exposure periods. For this purpose chemical, thermal, rheological and morphological analyses were performed on the tire rubber, which contains natura...

  6. Surface roughness of polyvinyl siloxane impression materials following chemical disinfection, autoclave and microwave sterilization.

    Science.gov (United States)

    Al Kheraif, Abdulaziz Abdullah

    2013-05-01

    Autoclave sterilization and microwave sterilization has been suggested as the effective methods for the disinfection of elastomeric impressions, but subjecting elastomeric impressions to extreme temperature may have adverse effects on critical properties of the elastomers. To evaluate the effect of chemical disinfection as well as autoclave and microwave sterilization on the surface roughness of elastomeric impression materials. The surface roughness of five commercially available polyvinyl siloxane impression materials (Coltene President, Affinis Perfect impression, Aquasil, 3M ESPE Express and GC Exafast) were evaluated after subjecting them to chemical disinfection, autoclaving and microwave sterilization using a Talysurf Intra 50 instrument. Twenty specimens from each material were fabricated and divided into four equal groups, three experimental and one control (n=25). The differences in the mean surface roughness between the treatment groups were recorded and statistically analyzed. No statistically significant increase in the surface roughness was observed when the specimens were subjected to chemical disinfection and autoclave sterilization, increase in roughness and discoloration was observed in all the materials when specimens were subjected to microwave sterilization. Chemical disinfection did not have a significant effect but, since it is less effective, autoclave sterilization can be considered effective and autoclaving did not show any specimen discoloration as in microwave sterilization. Microwave sterilization may be considered when impressions are used to make diagnostic casts. A significant increase in surface roughness may produce rougher casts, resulting in rougher tissue surfaces for denture and cast restorations. Autoclave sterilization of vinyl polysiloxane elastomeric impressions for 5 minutes at 134°C at 20 psi may be considered an effective method over chemical disinfection and microwave sterilization, because chemical disinfection does

  7. Hierarchy of Electronic Properties of Chemically Derived and Pristine Graphene Probed by Microwave Imaging

    KAUST Repository

    Kundhikanjana, Worasom

    2009-11-11

    Local electrical imaging using microwave impedance microscope is performed on graphene in different modalities, yielding a rich hierarchy of the local conductivity. The low-conductivity graphite oxide and its derivatives show significant electronic inhomogeneity. For the conductive chemical graphene, the residual defects lead to a systematic reduction of the microwave signals. In contrast, the signals on pristine graphene agree well with a lumped-element circuit model. The local impedance information can also be used to verify the electrical contact between overlapped graphene pieces. © 2009 American Chemical Society.

  8. A review of catalytic microwave pyrolysis of lignocellulosic biomass for value-added fuel and chemicals.

    Science.gov (United States)

    Morgan, Hervan Marion; Bu, Quan; Liang, Jianghui; Liu, Yujing; Mao, Hanping; Shi, Aiping; Lei, Hanwu; Ruan, Roger

    2017-04-01

    Lignocellulosic biomass is an abundant renewable resource and can be efficiently converted into bio-energy by a bio-refinery. From the various techniques available for biomass thermo-chemical conversion; microwave assisted pyrolysis (MAP) seems to be the very promising. The principles of microwave technology were reviewed and the parameters for the efficient production of bio-oil using microwave technology were summarized. Microwave technology by itself cannot efficiently produce high quality bio-oil products, catalysts are used to improve the reaction conditions and selectivity for valued products during MAP. The catalysts used to optimize MAP are revised in the development of this article. The origins for bio-oils that are phenol rich or hydrocarbon rich are reviewed and their experimental results were summarized. The kinetics of MAP is discussed briefly in the development of the article. Future prospects and scientific development of MAP are also considered in the development of this article.

  9. Chemical Oxygen Demand of Seawater Determined with a Microwave Heating Method

    Institute of Scientific and Technical Information of China (English)

    LIU Li; JI Hongwei; LIU Ying; XIN Huizhen

    2005-01-01

    This paper investigates a microwave heating method for the determination of chemical oxygen demand (COD) in seawater. The influences of microwave-power, heating time and standard substances on the results are studied. Using the proposed method, we analyzed the glucose standard solution, the coefficient of variation being less than 2%. Compared with the traditional electric stove heating method, the results of F-test and T-test showed that there was no significant difference between the two methods, but the microwave method had slightly higher precision and reproducibility than the electric stove method. With the microwave heating method, several seawater samples from Jiaozhou Bay and the South Yellow Sea were also analyzed. The recovery was between 97.5% and 104.3%. This new method has the advantages of shortening the heating time, improving the working efficiency and having simple operation and therefore can be used to analyze the COD in seawater.

  10. Experimental Studies of Microwave Reflection and Attenuation by Plasmas Produced by Burning Chemicals in Atmosphere

    Institute of Scientific and Technical Information of China (English)

    YUAN Zhongcai; SHI Jiaming; WANG Jiachun

    2007-01-01

    A series of chemicals are designed and prepared.With the method of thermodynamics,the average electron densities of the plasmas generated by burning chemicals are calculated.The reflection and attenuation of the microwaves,in a frequency band of 2 GHz to 15 GHz,by the plasma are measured.The results of measurements indicate that the plasma can absorb the energies of the microwaves in a broad band and reflect them faintly.Moreover,theoretical discussion reveals that the electron-neutral collision is the major factor that results in the absorption in the wide band.By using Appleton equations,average collision frequencies and electron densities are calculated from the attenuations of microwaves.

  11. Microwave assisted conversion of microcrystalline cellulose into value added chemicals using dilute acid catalyst.

    Science.gov (United States)

    Ching, Teck Wei; Haritos, Victoria; Tanksale, Akshat

    2017-02-10

    One of the grand challenges of this century is to transition fuels and chemicals production derived from fossil feedstocks to renewable feedstocks such as cellulosic biomass. Here we describe fast microwave conversion of microcrystalline cellulose (MCC) in water, with dilute acid catalyst to produce valuable platform chemicals. Single 10min microwave assisted treatment was able to convert >60% of MCC, with >50mol% yield of desirable products such as glucose, HMF, furfural and levulinic acid. Recycling of residual MCC with make-up fresh MCC resulted in an overall conversion of >93% after 5 cycles while maintaining >60% conversion in each cycle. Addition of isopropanol (70%v/v) as a co-solvent increased the yields of HMF and levulinic acid. This work shows for the first time proof of concept for complete conversion of recalcitrant microcrystalline cellulose in mild conditions of low temperature, dilute acid and short residence time using energy efficient microwave technology.

  12. A Microwave-Based Chemical Factory in the Lab: From Milligram to Multigram Preparations

    Directory of Open Access Journals (Sweden)

    Laura Rinaldi

    2015-01-01

    Full Text Available Microwave technology is changing the way we design and optimize synthetic protocols and their scaling up to multigram production levels. The latest generation of dedicated microwave reactors enables operators to quickly screen reaction conditions by means of parallel tests and select the best catalyst, solvent, and conditions. Pilot scale synthetic procedures require flow-through conditions in microwave flow reactors which can be obtained by adapting classic batch protocols. Microwave-assisted chemical processes play a pivotal role in the design of sustainable multigram preparations which address the double requirement of process intensification and competitive production costs. Although most researchers are likely to be acquainted with the great potential of dielectric heating, the advantages and disadvantages of a particular device or the conditions needed to maximize efficiency and functionality are often overlooked. The double aims of the present review are to provide a panoramic snapshot of commercially available lab microwave reactors and their features as well as highlighting a few selected applications of microwave chemistry of particular relevance.

  13. Microwave-ultrasound combined reactor suitable for atmospheric sample preparation procedure of biological and chemical products

    NARCIS (Netherlands)

    Lagha, A.; Chemat, S.; Bartels, P.V.; Chemat, F.

    1999-01-01

    A compact apparatus in which a specific position can be irradiated by microwaves (MW) and ultrasound (US) simultaneously has been developed. The MW-US reactor has been designed for atmospheric pressure digestion and dissolution of biological and chemical products. The reactor can treat a range of th

  14. Hierarchy of Electronic Properties of Chemically Derived and Pristine Graphene Probed by Microwave Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Kundhikanjana, W.

    2010-06-02

    Local electrical imaging using microwave impedance microscope is performed on graphene in different modalities, yielding a rich hierarchy of the local conductivity. The low-conductivity graphite oxide and its derivatives show significant electronic inhomogeneity. For the conductive chemical graphene, the residual defects lead to a systematic reduction of the microwave signals. In contrast, the signals on pristine graphene agree well with a lumped-element circuit model. The local impedance information can also be used to verify the electrical contact between overlapped graphene pieces.

  15. The precise condition of thermal runaway in microwave heating on chemical reaction

    Institute of Scientific and Technical Information of China (English)

    HUANG KaMa; LU Bo

    2009-01-01

    The precise condition of thermal runaway in microwave heating on chemical reaction with a feedback control system is quantitatively studied. First, the precise condition of thermal runaway in engineering application is derived based on the principle of the feedback control system. Then, the temperature rising rates for 4 different kinds of reaction systems placed in the waveguide and irradiated by micro-wave with different input powers are simulated. Finally, the relationship, which is inattentive so far, between the thermal runaway and the sensor's response time is discussed.

  16. The precise condition of thermal runaway in microwave heating on chemical reaction

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    The precise condition of thermal runaway in microwave heating on chemical reaction with a feedback control system is quantitatively studied. First, the precise condition of thermal runaway in engineering application is derived based on the principle of the feedback control system. Then, the temperature rising rates for 4 different kinds of reaction systems placed in the waveguide and irradiated by micro-wave with different input powers are simulated. Finally, the relationship, which is inattentive so far, between the thermal runaway and the sensor’s response time is discussed.

  17. Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane

    Energy Technology Data Exchange (ETDEWEB)

    Weeks, Stephen, E-mail: Stephen.Weeks@intermolecular.com; Nowling, Greg; Fuchigami, Nobi; Bowes, Michael; Littau, Karl [Intermolecular, 3011 North 1st Street, San Jose, California 95134 (United States)

    2016-01-15

    Progress in transistor scaling has increased the demands on the material properties of silicon nitride (SiN{sub x}) thin films used in device fabrication and at the same time placed stringent restrictions on the deposition conditions employed. Recently, low temperature plasma enhanced atomic layer deposition has emerged as a viable technique for depositing these films with a thermal budget compatible with semiconductor processing at sub-32 nm technology nodes. For these depositions, it is desirable to use precursors that are free from carbon and halogens that can incorporate into the film. Beyond this, it is necessary to develop processing schemes that minimize the wet etch rate of the film as it will be subjected to wet chemical processing in subsequent fabrication steps. In this work, the authors introduce low temperature deposition of SiN{sub x} using neopentasilane [NPS, (SiH{sub 3}){sub 4}Si] in a plasma enhanced atomic layer deposition process with a direct N{sub 2} plasma. The growth with NPS is compared to a more common precursor, trisilylamine [TSA, (SiH{sub 3}){sub 3 }N] at identical process conditions. The wet etch rates of the films deposited with NPS are characterized at different plasma conditions and the impact of ion energy is discussed.

  18. Microwave assisted synthesis of polymer via bioplatform chemical intermediate derived from Jatropha deoiled seed cake

    Directory of Open Access Journals (Sweden)

    B.S. Surendra

    2017-09-01

    Full Text Available We report on a two-step catalytic process, where deoiled seed cake as a feed was rapidly depolymerized and converted to a chemical intermediate under mild conditions, and a polymer compound was subsequently synthesized in the presence of an initiator under microwave irradiation. 5-Hydroxymethylfurfural (5-HMF is a significant chemical intermediate compound synthesized from a deoiled Jatropha seed cake under microwave irradiation in the presence of a heterogeneous acid activated Bentonite catalyst. This compound is suitable for the synthesis of polymers. Our study reveals that the synthesis process is an energy-efficient and cost-effective conversion of the deoiled seed cake into the polymer compound through the bioplatform chemical intermediate. The synthesized material was well characterized, confirming the formation and structures of the prepared catalysts.

  19. Microwave-Assisted Chemical Functionalization of Single-Walled Carbon Nanotubes with Organic Peroxides

    Institute of Scientific and Technical Information of China (English)

    WAN Li; WANG Xianbao; LI Shaoqing; LI Qin; TIAN Rong; LI Mingjian; CHENG Jing

    2009-01-01

    Microwave-assisted chemical functionalization of single-walled carbon nanotubes, with undecyl groups de-composed from lauroyl peroxides was reported. This rapid efficient procedure reduced the reaction time to 10 min, and obtained the products with higher functionalized degree than that by the conventional refluxing method. The in-fluence of different reaction time and microwave power on the functionalized degree has been explored by using FT-IR, TGA and Raman analyses. The results show that longer treatment time will lead to partial defunctionaliza-tion, and higher microwave power (higher than 900 W) can reduce the functionalized degree by removing some ini-tially-attached functional groups. Dispersion stability images and HRTEM images show that the resulting SWNT has enhanced dispersivity in organic solvents compared to the pristine nanotubes.

  20. Devulcanization of ground tire rubber: Physical and chemical changes after different microwave exposure times

    Directory of Open Access Journals (Sweden)

    P. S. Garcia

    2015-11-01

    Full Text Available Microwave devulcanization is known to be a promising and an efficient rubber recycling method which makes possible for the rubber to regain its fluidity, and makes it capable of being remolded and revulcanized. The focus of this work is to understand the physical and chemical changes that occur in the ground tire rubber after different microwave exposure periods. For this purpose chemical, thermal, rheological and morphological analyses were performed on the tire rubber, which contains natural rubber (NR and styrene-butadiene rubber (SBR as polymeric material. The results showed that the microwave treatment promoted the breaking of sulfur cross-links and consequently increased the rubber fluidity. However, long periods of exposure led to degradation and modification of some properties. At nanoscale, the deformation of the devulcanized NR domain under stress was observed, and the morphology obtained appears to be a droplet dispersion morphology. The most exposed samples presented only one glass transition temperature, and from this it was concluded that the treatment may have played an important role in the compatibilization of the elastomeric blend. Based on the results, it is required to control the microwave exposure time and polymeric degradation in order to achieve a regenerated rubber with satisfactory properties.

  1. Microwave-irradiation-assisted hybrid chemical approach for titanium dioxide nanoparticle synthesis: microbial and cytotoxicological evaluation.

    Science.gov (United States)

    Ranjan, Shivendu; Dasgupta, Nandita; Rajendran, Bhavapriya; Avadhani, Ganesh S; Ramalingam, Chidambaram; Kumar, Ashutosh

    2016-06-01

    Titanium dioxide nanoparticles (TNPs) are widely used in the pharmaceutical and cosmetics industries. It is used for protection against UV exposure due to its light-scattering properties and high refractive index. Though TNPs are increasingly used, the synthesis of TNPs is tedious and time consuming; therefore, in the present study, microwave-assisted hybrid chemical approach was used for TNP synthesis. In the present study, we demonstrated that TNPs can be synthesized only in 2.5 h; however, the commonly used chemical approach using muffle furnace takes 5 h. The activity of TNP depends on the synthetic protocol; therefore, the present study also determined the effect of microwave-assisted hybrid chemical approach synthetic protocol on microbial and cytotoxicity. The results showed that TNP has the best antibacterial activity in decreasing order from Escherichia coli, Bacillus subtilis, and Staphylococcus aureus. The IC50 values of TNP for HCT116 and A549 were found to be 6.43 and 6.04 ppm, respectively. Cell death was also confirmed from trypan blue exclusion assay and membrane integrity loss was observed. Therefore, the study determines that the microwave-assisted hybrid chemical approach is time-saving; hence, this technique can be upgraded from lab scale to industrial scale via pilot plant scale. Moreover, it is necessary to find the mechanism of action at the molecular level to establish the reason for greater bacterial and cytotoxicological toxicity. Graphical abstract A graphical representation of TNP synthesis.

  2. Renewable platform chemicals from directional microwave-assisted liquefaction coupling stepwise extraction of waste biomass

    Science.gov (United States)

    Junfeng Feng; Chungyun Hse; Zhongzhi Yang; Kui Wang; Jianchun Jiang; Junming Xu

    2017-01-01

    Directional microwave-assisted liquefaction and stepwise extraction are introduced for producing platform chemicals: aromatics and monosaccharides. When sulfuric acid was used as a catalyst, a 45% monosaccharides yield and a 29% aromatics yield were obtained from bamboo with 0.3 g catalyst per 18 g methanol and 2 g bamboo at 160 °C with 10 min. Approximately 78–86 wt%...

  3. Growth of Aligned Carbon Nanotubes through Microwave Plasma Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    王升高; 汪建华; 马志斌; 王传新; 满卫东

    2005-01-01

    Aligned carbon nanotubes (CNTs) were synthesized on glass by microwave plasma chemical vapor deposition (MWPCVD) with a mixture of methane and hydrogen gases at the low temperature of 550 ℃. The experimental results show that both the self-bias potential and the density of the catalyst particles are responsible for the alignment of CNTs. When the catalyst particle density is high enough, strong interactions among the CNTs can inhibit CNTs from growing randomly and result in parallel alignment.

  4. Impact of Microwave Treatment on Chemical Constituents in Fresh Rhizoma Gastrodiae (Tianma by UPLC-MS Analysis

    Directory of Open Access Journals (Sweden)

    Qimeng Fan

    2014-01-01

    Full Text Available Fresh Rhizoma Gastrodiae (Tianma was processed in a microwave oven at 2450 MHz in order to study the effect on the main chemical component changes taking place during microwave treatment. It was found that microwave affected the chemical composition of Tianma. Seven compounds, including gastrodin, gastrodigenin (p-hydroxybenzylalcohol, p-hydroxybenzaldehyde, vanillyl alcohol, vanillin, adenine, and 5-hydroxymethylfurfural, were identified in this study. As major active compounds, the contents of gastrodin and gastrodigenin in MWT Tianma were both twice as much as those in raw Tianma. Besides, the MS data show that there are still some unidentified compositions in Tianma, and there are also many converted compounds in MWT Tianma, which is worthy of further work. The results have indicated that microwave treated fresh Tianma might be helpful in designing the processing of traditional Chinese medicine and the application of microwave technology in traditional Chinese medicine needs to be researched further in the future.

  5. 微波连续化学过程研究进展%Microwave Continuous Flow Chemical Process

    Institute of Scientific and Technical Information of China (English)

    曹渊; 王晓; 李岩

    2009-01-01

    It is difficult for microwave batch reactors to be scaled up due to the penetration depth of microwaves into absorbing media is limited and hence the application of microwave chemistry to industrial production is restricted. The microwave continuous flow chemical process is an effective way for improving the application of microwave. It can overcome the problem of penetration depth and improve the radiant efficiency of microwave. The other advantages of the microwave continuous flow chemical process also include the easiness for controling the reaction parameters, optimizing the experiment process and automated continuous operation etc.. The application of the microwave continuous reactors and microwave continuous flow chemical process is introduced in detail.%由于微波在其吸收介质中的穿透深度有限,间歇釜式反应器很难扩大规模,从而使微波化学应用于工业生产受到一定限制.发展微波连续化学过程是实现微波更普遍的应用于工业生产的有效途径,微波连续化学过程克服了吸收介质的穿透深度等问题,显著提高了微波辐射效率,并存在易于控制反应参数,优化实验过程,自动化连续操作等优点.主要介绍了典型的微波连续反应装置及其在微波连续化学过程的应用.

  6. Isolation and characterization of cellulose nanofibers from bamboo using microwave liquefaction combined with chemical treatment and ultrasonication.

    Science.gov (United States)

    Xie, Jiulong; Hse, Chung-Yun; De Hoop, Cornelis F; Hu, Tingxing; Qi, Jinqiu; Shupe, Todd F

    2016-10-20

    Cellulose nanofibers were successfully isolated from bamboo using microwave liquefaction combined with chemical treatment and ultrasonic nanofibrillation processes. The microwave liquefaction could eliminate almost all the lignin in bamboo, resulting in high cellulose content residues within 7min, and the cellulose enriched residues could be readily purified by subsequent chemical treatments with lower chemical charging and quickly. The results of wet chemistry analyses, SEM images, and FTIR and X-ray spectra indicated the combination of microwave liquefaction and chemical treatment was significantly efficient in removing non-cellulosic compounds. Ultrasonication was used to separate the nanofibrils from the purified residues to extract nanofibers. The TEM images confirmed the presence of elementary fibrils, nano-sized fibril bundles, and aggregated fibril bundles. As evidenced by the TGA analysis, cellulose nanofibers isolated by this novel technique had high thermal stability indicating that the isolated nanofibers could possibly be applied as reinforcing elements in biomaterials.

  7. Novel microwave assisted chemical synthesis of Nd₂Fe₁₄B hard magnetic nanoparticles.

    Science.gov (United States)

    Swaminathan, Viswanathan; Deheri, Pratap Kumar; Bhame, Shekhar Dnyaneswar; Ramanujan, Raju Vijayaraghavan

    2013-04-07

    The high coercivity and excellent energy product of Nd2Fe14B hard magnets have led to a large number of high value added industrial applications. Chemical synthesis of Nd2Fe14B nanoparticles is challenging due to the large reduction potential of Nd(3+) and the high tendency for Nd2Fe14B oxidation. We report the novel synthesis of Nd2Fe14B nanoparticles by a microwave assisted combustion process. The process consisted of Nd-Fe-B mixed oxide preparation by microwave assisted combustion, followed by the reduction of the mixed oxide by CaH2. This combustion process is fast, energy efficient and offers facile elemental substitution. The coercivity of the resulting powders was ∼8.0 kOe and the saturation magnetization was ∼40 emu g(-1). After removal of CaO by washing, saturation magnetization increased and an energy product of 3.57 MGOe was obtained. A range of magnetic properties was obtained by varying the microwave power, reduction temperature and Nd to Fe ratio. A transition from soft to exchange coupled to hard magnetic properties was obtained by varying the composition of NdxFe1-xB8 (x varies from 7% to 40%). This synthesis procedure offers an inexpensive and facile platform to produce exchange coupled hard magnets.

  8. Evaluation and comparison of high-level microwave oven disinfection with chemical disinfection of dental gypsum casts.

    Science.gov (United States)

    Meghashri, K; Kumar, Prasanna; Prasad, D Krishna; Hegde, Rakshit

    2014-06-01

    The aim of this study was to evaluate and compare microwave disinfection with chemical disinfection of dental gypsum casts. A total of 120 casts were prepared from a silicone mold using Type III dental stone. Of the 120 casts, 60 casts were contaminated with 1 ml suspension of Staphylococcus aureus and 60 casts were contaminated with 1 ml suspension of Pseudomonas aeruginosa. Then, the casts were disinfected with microwave irradiation and chemical disinfection using the microwave oven and 0.5% sodium hypochlorite. Bacteriologic procedures were performed; the cfu/ml for each cast was calculated as a weighted mean. The results were analyzed using Kruskal-Wallis test and Mann-Whitney test. The untreated casts showed Brain heart infusion broth counts of 106 log cfu/ml compared to irradiated and chemically disinfected casts, in which 105 log reduction of cfu/ml was seen. These results satisfied the requirements of current infection control guidelines for the dental laboratory. The results obtained for chemical disinfection were in equivalence with microwave disinfection. Within the limitation of this in vitro study, it was found that microwave disinfection of casts for 5 min at 900 W gives high-level disinfection that complies with the current infection control guidelines for the dental laboratory and microwave disinfection method is an effective and validated method as chemical disinfection. How to cite the article: Meghashri K, Kumar P, Prasad DK, Hegde R. Evaluation and comparison of high-level microwave oven disinfection with chemical disinfection of dental gypsum casts. J Int Oral Health 2014;6(3):56-60 .

  9. Synthesis and characterization of well-aligned carbon nitrogen nanotubes by microwave plasma chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Well-aligned carbon nitrogen nanotube films have been synthesized successfully on mesoporous silica substrates by microwave plasma chemical vapor deposition (MWPCVD) method. Studies on their morphology, structure, and composition by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDX), respectively, indicate that these nanotubes consist of linearly polymerized carbon nitrogen nanobells, and the nitrogen atoms have been doped into carbon netweork to form a new structure C1-xNx (x=0.16±0.01). X-ray photoelectron spectroscopy (XPS) results of the samples further demonstrate that carbon bonds covalently with nitrogen in all the carbon nitrogen nanotube films.

  10. Amorphous indium-gallium-zinc-oxide thin-film transistors using organic-inorganic hybrid films deposited by low-temperature plasma-enhanced chemical vapor deposition for all dielectric layers

    Science.gov (United States)

    Hsu, Chao-Jui; Chang, Ching-Hsiang; Chang, Kuei-Ming; Wu, Chung-Chih

    2017-01-01

    We investigated the deposition of high-performance organic-inorganic hybrid dielectric films by low-temperature (close to room temperature) inductively coupled plasma chemical vapor deposition (ICP-CVD) with hexamethyldisiloxane (HMDSO)/O2 precursor gas. The hybrid films exhibited low leakage currents and high breakdown fields, suitable for thin-film transistor (TFT) applications. They were successfully integrated into the gate insulator, the etch-stop layer, and the passivation layer for bottom-gate staggered amorphous In-Ga-Zn-O (a-IGZO) TFTs having the etch-stop configuration. With the double-active-layer configuration having a buffer a-IGZO back-channel layer grown in oxygen-rich atmosphere for better immunity against plasma damage, the etch-stop-type bottom-gate staggered a-IGZO TFTs with good TFT characteristics were successfully demonstrated. The TFTs showed good field-effect mobility (μFE), threshold voltage (V th), subthreshold swing (SS), and on/off ratio (I on/off) of 7.5 cm2 V-1 s-1, 2.38 V, 0.38 V/decade, and 2.2 × 108, respectively, manifesting their usefulness for a-IGZO TFTs.

  11. Synthesis of graphene by cobalt-catalyzed decomposition of methane in plasma-enhanced CVD: Optimization of experimental parameters with Taguchi method

    Science.gov (United States)

    Mehedi, H.-A.; Baudrillart, B.; Alloyeau, D.; Mouhoub, O.; Ricolleau, C.; Pham, V. D.; Chacon, C.; Gicquel, A.; Lagoute, J.; Farhat, S.

    2016-08-01

    This article describes the significant roles of process parameters in the deposition of graphene films via cobalt-catalyzed decomposition of methane diluted in hydrogen using plasma-enhanced chemical vapor deposition (PECVD). The influence of growth temperature (700-850 °C), molar concentration of methane (2%-20%), growth time (30-90 s), and microwave power (300-400 W) on graphene thickness and defect density is investigated using Taguchi method which enables reaching the optimal parameter settings by performing reduced number of experiments. Growth temperature is found to be the most influential parameter in minimizing the number of graphene layers, whereas microwave power has the second largest effect on crystalline quality and minor role on thickness of graphene films. The structural properties of PECVD graphene obtained with optimized synthesis conditions are investigated with Raman spectroscopy and corroborated with atomic-scale characterization performed by high-resolution transmission electron microscopy and scanning tunneling microscopy, which reveals formation of continuous film consisting of 2-7 high quality graphene layers.

  12. Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hemawan, Kadek W.; Gou, Huiyang; Hemley, Russell J. [Geophysical Laboratory, Carnegie Institution of Washington, 5251 Broad Branch Rd., NW, Washington, DC 20015 (United States)

    2015-11-02

    Polycrystalline diamond has been synthesized on silicon substrates at atmospheric pressure, using a microwave capillary plasma chemical vapor deposition technique. The CH{sub 4}/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H{sub 2} into the deposition gas chemistry. Electronically excited species of CN, C{sub 2}, Ar, N{sub 2}, CH, H{sub β}, and H{sub α} were observed in the emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T{sub 2g} phonon at 1333 cm{sup −1} peak relative to the Raman features of graphitic carbon. Field emission scanning electron microscopy images reveal that, depending on the growth conditions, the carbon microstructures of grown films exhibit “coral” and “cauliflower-like” morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm.

  13. Carbon nanofiber growth in plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Denysenko, I.; Ostrikov, K.; Cvelbar, U.; Mozetic, M.; Azarenkov, N. A.

    2008-10-01

    A theoretical model to describe the plasma-assisted growth of carbon nanofibers (CNFs) is proposed. Using the model, the plasma-related effects on the nanofiber growth parameters, such as the growth rate due to surface and bulk diffusion, the effective carbon flux to the catalyst surface, the characteristic residence time and diffusion length of carbon atoms on the catalyst surface, and the surface coverages, have been studied. The dependence of these parameters on the catalyst surface temperature and ion and etching gas fluxes to the catalyst surface is quantified. The optimum conditions under which a low-temperature plasma environment can benefit the CNF growth are formulated. These results are in good agreement with the available experimental data on CNF growth and can be used for optimizing synthesis of related nanoassemblies in low-temperature plasma-assisted nanofabrication.

  14. A new modular multichamber plasma enhanced chemical vapor deposition system

    Science.gov (United States)

    Madan, A.; Rava, P.; Schropp, R. E. I.; von Roedern, B.

    1993-06-01

    The present work reports on a new modular UHV multichamber PECVD system with characteristics which prevent both the incorporation of residual impurities and cross contamination between different layers. A wide range of intrinsic and doped hydrogenated amorphous silicon (a-Si:H) materials have been produced and single junction pin solar cells with an efficiency greater than 10% have been readily obtained with little optimization. The system contains three UHV modular process zones (MPZ's); the MPZ's and a load lock chamber are located around a central isolation and transfer zone which contains the transport mechanism consisting of an arm with radial and linear movement. This configuration allows for introduction of the substrate into the MPZ's in any sequence so that any type of multilayer device can be produced. The interelectrode distance in the MPZ's can be adjusted between 1 and 5 cm. This has been found to be an important parameter in the optimisation of the deposition rate and of the uniformity. The multichamber concept also allows individually optimized deposition temperatures and interelectrode distances for the various layers. The system installed in Utrecht will be employed for further optimization of single junction solar cells and for research and development of stable a-Si:H tandem cells.

  15. Microwave, High-Resolution Infrared, and Quantum Chemical Investigations of CHBrF2

    DEFF Research Database (Denmark)

    Cazzoli, Gabriele; Cludi, Lino; Puzzarini, Cristina

    2011-01-01

    analysis by high-level quantum chemical calculations at the coupled-cluster level. In this context, the importance of relativistic effects, which are of the order of 6.5% and included in the present work using second-order direct perturbation theory, needs to be emphasized for accurate predictions......A combined microwave, infrared, and computational investigation of CHBrF2 is reported. For the vibrational ground state, measurements in the millimeter- and sub-millimeter-wave regions for (CHBrF2)-Br-79 and (CHBrF2)-Br-81 provided rotational and centrifugal-distortion constants up to the sextic...... terms as well as the hyperfine parameters (quadrupole-coupling and spin-rotation interaction constants) of the bromine nucleus. The determination of the latter was made possible by recording of spectra at sub-Doppler resolution, achieved by means of the Lamb-dip technique, and supporting the spectra...

  16. Synthesis and characterization of well-aligned carbon nitrogen nanotubes by microwave plasma chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    马旭村; 徐贵昌; 王恩哥

    2000-01-01

    Well-aligned carbon nitrogen nanotube films have been synthesized successfully on meso-porous silica substrates by microwave plasma chemical vapor deposition (MWPCVD) method. Studies on their morphology, structure, and composition by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDX), respectively, indicate that these nanotubes consist of linearly polymerized carbon nitrogen nanobells, and the nitrogen atoms have been doped into carbon netweork to form a new structure C1-xNx( x = 0.16±0.01). X-ray photoelectron spectroscopy (XPS) results of the samples further demonstrate that carbon bonds cova-lently with nitrogen in all the carbon nitrogen nanotube films.

  17. Synthesis and characterization of nanoparticles of CZTSe by microwave-assited chemical synthesis

    Science.gov (United States)

    Reyes Vallejo, O.; Sánchez, Mónica; Pal, Mou; Espinal, R.; Llorca, Jordi; Sebastian, P. J.

    2016-12-01

    In this study we present the synthesis of Cu2ZnSnSe4 (CZTSe) nanoparticles by microwave-assisted chemical synthesis employing organic solvents. The effect of reaction time, reactant concentration, solvent and additives (inorganic material) was studied on the structural and optical properties of the nanomaterials. The powder samples were analyzed by x-ray diffraction, Raman spectroscopy, x-ray energy dispersive spectroscopy and x-ray photoelectron spectroscopy. The results show that the synthesis performed with triethanolamine and deionized water is better than others solvents, producing nanocrystals of quaternary phase (CZTSe) with stoichiometric relations similar to the reported research in the literature, which falls in the range of Cu/(Zn+Sn): 0.8-1.0, Zn/Sn: 1.0-1.20. The nanoparticles of CZTSe synthesized in this study present desirable properties in order to use them in solar cell and photoelectrochemical cell applications.

  18. Comparative Evaluation of Dimensional Accuracy of Elastomeric Impression Materials when Treated with Autoclave, Microwave, and Chemical Disinfection

    OpenAIRE

    Kamble, Suresh S.; Khandeparker, Rakshit Vijay; P.Somasundaram; Raghav, Shweta; Babaji, Rashmi P; Varghese, T Joju

    2015-01-01

    Background: Impression materials during impression procedure often get infected with various infectious diseases. Hence, disinfection of impression materials with various disinfectants is advised to protect the dental team. Disinfection can alter the dimensional accuracy of impression materials. The present study was aimed to evaluate the dimensional accuracy of elastomeric impression materials when treated with different disinfectants; autoclave, chemical, and microwave method. Materials and...

  19. Cytotoxicity of Boron-Doped Nanocrystalline Diamond Films Prepared by Microwave Plasma Chemical Vapor Deposition

    Science.gov (United States)

    Liu, Dan; Gou, Li; Ran, Junguo; Zhu, Hong; Zhang, Xiang

    2015-07-01

    Boron-doped nanocrystalline diamond (NCD) exhibits extraordinary mechanical properties and chemical stability, making it highly suitable for biomedical applications. For implant materials, the impact of boron-doped NCD films on the character of cell growth (i.e., adhesion, proliferation) is very important. Boron-doped NCD films with resistivity of 10-2 Ω·cm were grown on Si substrates by the microwave plasma chemical vapor deposition (MPCVD) process with H2 bubbled B2O3. The crystal structure, diamond character, surface morphology, and surface roughness of the boron-doped NCD films were analyzed using different characterization methods, such as X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The contact potential difference and possible boron distribution within the film were studied with a scanning kelvin force microscope (SKFM). The cytotoxicity of films was studied by in vitro tests, including fluorescence microscopy, SEM and MTT assay. Results indicated that the surface roughness value of NCD films was 56.6 nm and boron was probably accumulated at the boundaries between diamond agglomerates. MG-63 cells adhered well and exhibited a significant growth on the surface of films, suggesting that the boron-doped NCD films were non-toxic to cells. supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (University of Electronic Science and Technology of China) (No. KFJJ201313)

  20. Comparison of three optimized digestion methods for rapid determination of chemical oxygen demand: Closed microwaves, open microwaves and ultrasound irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Domini, Claudia E. [Departamento de Quimica, Universidad Nacional del Sur, Av. Alem 1253, 8000 Bahia Blanca (Argentina); Hidalgo, Montserrat [Departamento de Quimica Analitica, Nutricion y Bromatologia, Universidad de Alicante, Apdo. 99, 03080 Alicante (Spain); Marken, Frank [Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Canals, Antonio [Departamento de Quimica Analitica, Nutricion y Bromatologia, Universidad de Alicante, Apdo. 99, 03080 Alicante (Spain)]. E-mail: a.canals@ua.es

    2006-03-02

    In the present work, experimental design was used for the fast optimization of three kinds of sample digestion procedures with the final aim of obtaining the COD value of wastewater samples. The digestion methods evaluated were 'closed microwave-assisted' (CMWD), 'open microwave-assisted' (OMWD) and 'ultrasound-assisted' (USD). Classical digestion was used as reference method. The optimum values for the different variables studied in each method were: 90 psi pressure, 475 W power and 4 min irradiation time (CMWD); 150 deg. C temperature and 4 min irradiation time (OMWD); 90% of maximum nominal power (180 W), 0.9 s (s{sup -1}) cycles and 1 min irradiation time (USD). In all cases, interference concentration that produces a deviation of 10% in COD values is 13.4, 23.4, 21.1 and 2819 mg/L for S{sup 2-}, Fe{sup 2+}, NO{sub 2} {sup -} and Cl{sup -}, respectively. Under optimum conditions, the proposed digestion methods have been successfully applied, with the exception of pyridine, to several pure organic compounds and COD recoveries for 10 real wastewater samples were ranged between 88 and 104% of the values obtained with the classical (open reflux) method used as reference, with R.S.D. lower than 4% in most cases. Thus, the use of ultrasound energy for COD determination seems to be an interesting and promising alternative to conventional open reflux and microwave-assisted digestion methods used for the same purpose since the instrumentation is simpler, cheaper and safer and the digestion step faster than the ones used for the same purpose.

  1. Synthesis of SiV-diamond particulates via the microwave plasma chemical deposition of ultrananocrystalline diamond on soda-lime glass fibers

    Science.gov (United States)

    Kunuku, Srinivasu; Chen, Yen-Chun; Yeh, Chien-Jui; Chang, Wen-Hao; Manoharan, Divinah; Leou, Keh-Chyang; Lin, I.-Nan

    2016-10-01

    We report the synthesis of silicon-vacancy (SiV) incorporated spherical shaped ultrananocrystalline diamond (SiV-UNCD) particulates (size ∼1 μm) with bright luminescence at 738 nm. For this purpose, different granular structured polycrystalline diamond films and particulates were synthesized by using three different kinds of growth plasma conditions on the three types of substrate materials in the microwave plasma enhanced CVD process. The grain size dependent photoluminescence properties of nitrogen vacancy (NV) and SiV color centers have been investigated for different granular structured diamond samples. The luminescence of NV center and the associated phonon sidebands, which are usually observed in microcrystalline diamond and nanocrystalline diamond films, were effectively suppressed in UNCD films and UNCD particulates. Micron sized SiV-UNCD particulates with bright SiV emission has been attained by transfer of SiV-UNCD clusters on soda-lime glass fibers to inverted pyramidal cavities fabricated on Si substrates by the simple crushing of UNCD/soda-lime glass fibers in deionized water and ultrasonication. Such a plasma enhanced CVD process for synthesizing SiV-UNCD particulates with suppressed NV emission is simple and robust to attain the bright SiV-UNCD particulates to employ in practical applications.

  2. Microwave Plasma Chemical Vapor Deposition of Diamond Films on Silicon From Ethanol and Hydrogen

    Institute of Scientific and Technical Information of China (English)

    马志斌; 汪建华; 王传新; 满卫东

    2003-01-01

    Diamond films with very smooth surface and good optical quality have been deposited onto silicon substrate using microwave plasma chemical vapor deposition (MPCVD) from a gas mixture of ethanol and hydrogen at a low substrate temperature of 450 ℃. The effects of the substrate temperature on the diamond nucleation and the morphology of the diamond film have been investigated and observed with scanning electron microscopy (SEM). The microstructure and the phase of the film have been characterized using Raman spectroscopy and X-ray diffraction (XRD). The diamond nucleation density significantly decreases with the increasing of the substrate temperature. There are only sparse nuclei when the substrate temperature is higher than 800 ℃ although the ethanol concentration in hydrogen is very high. That the characteristic diamond peak in the Raman spectrum of a diamond film prepared at a low substrate temperature of 450 ℃ extends into broadband indicates that the film is of nanophase. No graphite peak appeared in the XRD pattern confirms that the film is mainly composed of SP3 carbon. The diamond peak in the XRD pattern also broadens due to the nanocrystalline of the film.

  3. EFFECTS OF RADIO FREQUENCY / MICROWAVE ON THE CHEMICAL COMPOSITION AND ANTIOXIDANT POTENTIAL OF LYCOPERSICON ESCULENTUM L.

    Directory of Open Access Journals (Sweden)

    Rammal Marwa

    2013-09-01

    Full Text Available In our work, the effects of radio frequency / microwave on the morphology, chemical composition and the antioxidant power of the plant Lycopersicon esculentum Mill. grown in our laboratory have been accomplished. The obtained results showed that after 10 days of exposure of this plant to electromagnetic fields with high frequency (1250 MHz the stems were long with less leaves than the non exposed plant. However, after 20 days of exposure to this same frequency the stems were long and contain more leaves than the non exposed plant. These leaves were larger and thicker in comparison with those of the non exposed plant. On the other side, the phytochemical screening of the ethanolic extract revealed the presence of flavonoids in the exposed and non exposed plant. Alkaloids, phenols and saponins were only present in non exposed plant. The tannins were absent in the exposed and non exposed plant. Therefore, resins were highly expressed in the exposed plant. On the other side, the x-ray fluorescence indicated the presence of various trace elements more particularly niobium and molybdenum. After exposure, the amount of these elements varies. On the other hand, the DPPH and H2O2 tests showed an important decrease in the antioxidant potential after exposure to studied frequency. This decrease was from 42 % to 18 % at the concentration 0.5 mg/ml. All of these results show that the high frequency emitted by the electromagnetic fields exert a strong effect on the plant and by consequence on human health.

  4. Thermal conversion of glycerol to value-added chemicals: pyridine derivatives by one-pot microwave-assisted synthesis

    OpenAIRE

    BAYRAMOĞLU, Duygu; GÜREL, Gökay; SINAĞ, Ali; GÜLLÜ, Mustafa

    2014-01-01

    One-pot syntheses of the value-added heterocyclic compounds 3-methylpyridine and pyridine using a renewable chemical, glycerol, were achieved in acidic medium by thermal conversion reactions. Condensation/cyclization reactions of the thermal degradation products of glycerol were investigated in situ using different ammonia and acidic moiety producing inorganic ammonium salts under pyrolysis or microwave heating conditions. The reaction parameters were studied in detail and satisfying product ...

  5. Thermal conversion of glycerol to value-added chemicals: pyridine derivatives by one-pot microwave-assisted synthesis

    OpenAIRE

    BAYRAMOĞLU, Duygu; GÜREL, Gökay; SINAĞ, Ali; GÜLLÜ, Mustafa

    2015-01-01

    One-pot syntheses of the value-added heterocyclic compounds 3-methylpyridine and pyridine using a renewable chemical, glycerol, were achieved in acidic medium by thermal conversion reactions. Condensation/cyclization reactions of the thermal degradation products of glycerol were investigated in situ using different ammonia and acidic moiety producing inorganic ammonium salts under pyrolysis or microwave heating conditions. The reaction parameters were studied in detail and satisfying product ...

  6. Microwave-assisted chemical reduction routes for direct synthesis of (fct) L1 phase of Fe-Pt.

    Science.gov (United States)

    Acharya, Smita; Singh, Kamal

    2011-01-01

    Microwave-assisted chemical reduction route has been explored for the direct synthesis of fct L1(0) - phase of Fe-Pt nanoparticles in the present work. Effects of microwave power and irradiation time on the growth process are systematically studied. Using this facile and high yield technique we could tune particle size from 7 to 17 nm. Prepared Fe-Pt NPs exhibited ordered face centered tetragonal (fct) L1(0) phase without any post-synthesis treatment. The particle size and magnetic properties of the prepared Fe-Pt were found to be very sensitive to the microwave irradiation power, while influence of exposure time was insignificant. The hysteresis measurements were performed at 300 K to study magnetic properties of the synthesized Fe-Pt as a function of crystallite size. Coercivity and saturation magnetization were observed to be decreasing with diminishing particle size. The microwave-assisted route is found to be a simple technique for direct synthesis of metal alloys and may prove to be a potential tool of high density data storage materials such as Fe-Pt.

  7. Morphological stability of the atomically clean surface of silicon (100) crystals after microwave plasma-chemical processing

    Energy Technology Data Exchange (ETDEWEB)

    Yafarov, R. K., E-mail: pirpc@yandex.ru; Shanygin, V. Ya. [Russian Academy of Sciences, Saratov Branch of the Kotel’nikov Institute of Radio Engineering and Electronics (Russian Federation)

    2016-01-15

    The morphological stability of atomically clean silicon (100) surface after low-energy microwave plasma-chemical etching in various plasma-forming media is studied. It is found that relaxation changes in the surface density and atomic bump heights after plasma processing in inert and chemically active media are multidirectional in character. After processing in a freon-14 medium, the free energy is minimized due to a decrease in the surface density of microbumps and an increase in their height. After argon-plasma processing, an insignificant increase in the bump density with a simultaneous decrease in bump heights is observed. The physicochemical processes causing these changes are considered.

  8. Microwave-assisted chemical insertion: a rapid technique for screening cathodes for Mg-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Kaveevivitchai, Watchareeya; Huq, Ashfia; Manthiram, Arumugam

    2016-12-19

    We report an ultrafast microwave-assisted solvothermal method for chemical insertion of Mg2+ ions into host materials using magnesium acetate [Mg(CH3COO)2] as a metal-ion source and diethylene glycol (DEG) as a reducing agent. For instance, up to 3 Mg ions per formula unit of a microporous host framework Mo2.5+yVO9+z could be inserted in as little as 30 min at 170–195 °C in air. This process is superior to the traditional method which involves the use of organometallic reagents, such as di-n-butylmagnesium [(C4H9)2Mg] and magnesium bis(2,6-di-tert-butylphenoxide) [Mg-(O-2,6-But2C6H3)2], and requires an inert atmosphere with extremely long reaction times. Considering the lack of robust electrolytes for Mg-ion batteries, this facile approach can be readily used as a rapid screening technique to identify potential Mg-ion electrode hosts without the necessity of fabricating electrodes and assembling electrochemical cells. Due to the mild reaction conditions, the overall structure and morphology of the Mg-ion inserted products are maintained and the compounds can be used successfully as a cathode in Mg-ion batteries. The combined synchrotron X-ray and neutron diffraction Rietveld analysis reveals the structure of the Mg-inserted compounds and gives an insight into the interactions between the Mg ions and the open-tunnel host framework.

  9. The Molecular Structure of Phenetole Studied by Microwave Spectroscopy and Quantum Chemical Calculations

    Science.gov (United States)

    Ferres, Lynn; Stahl, Wolfgang; Nguyen, Ha Vinh Lam

    2016-06-01

    A pulsed molecular beam Fourier transform microwave spectrometer operating in the frequency range 2 - 26.5 GHz was used to measure the spectrum of phenetole (ethyl phenyl ether or ethoxybenzene, C6H5OC2H5). The conformational landscape is completely determined by the orientations of the phenyl ring and the ethyl group. A two-dimensional potential energy surface was calculated at the MP2/6-311++G(d,p) level of theory. Two conformers were found: The trans conformer has a Cs symmetry, and the gauche conformer has the ethyl group tilted out of the phenyl plane by about 70°. Totally 186 rotational transitions were assigned to the more stable planar trans conformer, and fitted using a semi-rigid rotor model to measurement accuracy of 2 kHz. Highly accurate rotational and centrifugal distortion constants were determined. Several method and basis set combinations were applied to check for convergence and to compare with the experimentally deduced molecular parameters. The inertial defect of the observed conformer Δc = (Ic - Ia - Ib) = -6.718 uÅ2 confirms that the heavy atom skeleton is planar with two pairs of hydrogen atoms out of plane. All lines in the spectrum could be assigned to the trans conformer, which confirms that the gauche conformer cannot be observed under our measurement conditions. In agreement with the rather high torsional barrier of the methyl group (V3 = 1168 wn) calculated by quantum chemical methods, all assigned lines appeared sharp and no signs of splittings were observed for the methyl internal rotation.

  10. A new type of power energy for accelerating chemical reactions: the nature of a microwave-driving force for accelerating chemical reactions

    Science.gov (United States)

    Zhou, Jicheng; Xu, Wentao; You, Zhimin; Wang, Zhe; Luo, Yushang; Gao, Lingfei; Yin, Cheng; Peng, Renjie; Lan, Lixin

    2016-04-01

    The use of microwave (MW) irradiation to increase the rate of chemical reactions has attracted much attention recently in nearly all fields of chemistry due to substantial enhancements in reaction rates. However, the intrinsic nature of the effects of MW irradiation on chemical reactions remains unclear. Herein, the highly effective conversion of NO and decomposition of H2S via MW catalysis were investigated. The temperature was decreased by several hundred degrees centigrade. Moreover, the apparent activation energy (Ea’) decreased substantially under MW irradiation. Importantly, for the first time, a model of the interactions between microwave electromagnetic waves and molecules is proposed to elucidate the intrinsic reason for the reduction in the Ea’ under MW irradiation, and a formula for the quantitative estimation of the decrease in the Ea’ was determined. MW irradiation energy was partially transformed to reduce the Ea’, and MW irradiation is a new type of power energy for speeding up chemical reactions. The effect of MW irradiation on chemical reactions was determined. Our findings challenge both the classical view of MW irradiation as only a heating method and the controversial MW non-thermal effect and open a promising avenue for the development of novel MW catalytic reaction technology.

  11. A new type of power energy for accelerating chemical reactions: the nature of a microwave-driving force for accelerating chemical reactions.

    Science.gov (United States)

    Zhou, Jicheng; Xu, Wentao; You, Zhimin; Wang, Zhe; Luo, Yushang; Gao, Lingfei; Yin, Cheng; Peng, Renjie; Lan, Lixin

    2016-04-27

    The use of microwave (MW) irradiation to increase the rate of chemical reactions has attracted much attention recently in nearly all fields of chemistry due to substantial enhancements in reaction rates. However, the intrinsic nature of the effects of MW irradiation on chemical reactions remains unclear. Herein, the highly effective conversion of NO and decomposition of H2S via MW catalysis were investigated. The temperature was decreased by several hundred degrees centigrade. Moreover, the apparent activation energy (Ea') decreased substantially under MW irradiation. Importantly, for the first time, a model of the interactions between microwave electromagnetic waves and molecules is proposed to elucidate the intrinsic reason for the reduction in the Ea' under MW irradiation, and a formula for the quantitative estimation of the decrease in the Ea' was determined. MW irradiation energy was partially transformed to reduce the Ea', and MW irradiation is a new type of power energy for speeding up chemical reactions. The effect of MW irradiation on chemical reactions was determined. Our findings challenge both the classical view of MW irradiation as only a heating method and the controversial MW non-thermal effect and open a promising avenue for the development of novel MW catalytic reaction technology.

  12. Comparative Evaluation of Dimensional Accuracy of Elastomeric Impression Materials when Treated with Autoclave, Microwave, and Chemical Disinfection.

    Science.gov (United States)

    Kamble, Suresh S; Khandeparker, Rakshit Vijay; Somasundaram, P; Raghav, Shweta; Babaji, Rashmi P; Varghese, T Joju

    2015-09-01

    Impression materials during impression procedure often get infected with various infectious diseases. Hence, disinfection of impression materials with various disinfectants is advised to protect the dental team. Disinfection can alter the dimensional accuracy of impression materials. The present study was aimed to evaluate the dimensional accuracy of elastomeric impression materials when treated with different disinfectants; autoclave, chemical, and microwave method. The impression materials used for the study were, dentsply aquasil (addition silicone polyvinylsiloxane syringe and putty), zetaplus (condensation silicone putty and light body), and impregum penta soft (polyether). All impressions were made according to manufacturer's instructions. Dimensional changes were measured before and after different disinfection procedures. Dentsply aquasil showed smallest dimensional change (-0.0046%) and impregum penta soft highest linear dimensional changes (-0.026%). All the tested elastomeric impression materials showed some degree of dimensional changes. The present study showed that all the disinfection procedures produce minor dimensional changes of impression material. However, it was within American Dental Association specification. Hence, steam autoclaving and microwave method can be used as an alternative method to chemical sterilization as an effective method.

  13. Synthesis of nanostructured and microstructured ZnO and Zn(OH)2 on activated carbon cloth by hydrothermal and microwave-assisted chemical bath deposition methods

    Science.gov (United States)

    Mosayebi, Elham; Azizian, Saeid; Hajian, Ali

    2015-05-01

    Nanostructured and microstructured ZnO and Zn(OH)2 loaded on activated carbon cloth were synthesized by microwave-assisted chemical bath deposition and hydrothermal methods. By hydrothermal method the deposited sample on carbon fiber is pure ZnO with dandelion-like nanostructures. By microwave-assisted chemical bath method the structure and composition of deposited sample depends on solution pH. At pH = 9.8 the deposited sample on carbon fiber is pure ZnO with flower-like microstructure; but at pH = 10.8 the sample is a mixture of ZnO and Zn(OH)2 with flower-like and rhombic microstructures, respectively. The mechanism of crystal grow by microwave-assisted chemical bath method was investigated by SEM method at both pH.

  14. Microwave assisted rapid growth of Mg(OH){sub 2} nanosheet networks for ethanol chemical sensor application

    Energy Technology Data Exchange (ETDEWEB)

    Al-Hazmi, Faten [Department of Physics, College of Science, King Abdulaziz University, P.O. Box 80203, Jeddah 21569 (Saudi Arabia); Umar, Ahmad, E-mail: ahmadumar786@gmail.com [Promising Centre for Sensors and Electronic Devices (PCSED) and Centre for Advanced Materials and Nano-Research (CAMNR), Najran University, P.O. Box 1988, Najran 11001 (Saudi Arabia); Dar, G.N. [Promising Centre for Sensors and Electronic Devices (PCSED) and Centre for Advanced Materials and Nano-Research (CAMNR), Najran University, P.O. Box 1988, Najran 11001 (Saudi Arabia); Al-Ghamdi, A.A.; Al-Sayari, S.A. [Department of Physics, College of Science, King Abdulaziz University, P.O. Box 80203, Jeddah 21569 (Saudi Arabia); Al-Hajry, A. [Promising Centre for Sensors and Electronic Devices (PCSED) and Centre for Advanced Materials and Nano-Research (CAMNR), Najran University, P.O. Box 1988, Najran 11001 (Saudi Arabia); Department of Physics, College of Science and Arts, Najran University, P.O. Box 1988, Najran 11001 (Saudi Arabia); Kim, S.H. [Promising Centre for Sensors and Electronic Devices (PCSED) and Centre for Advanced Materials and Nano-Research (CAMNR), Najran University, P.O. Box 1988, Najran 11001 (Saudi Arabia); Al-Tuwirqi, Reem M. [Department of Physics, College of Science, King Abdulaziz University, P.O. Box 80203, Jeddah 21569 (Saudi Arabia); Alnowaiserb, Fowzia [Department of Chemistry, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); El-Tantawy, Farid [Department of Physics, Faculty of Science, Suez Canal University, Ismailia (Egypt)

    2012-04-05

    Highlights: Black-Right-Pointing-Pointer A facile microwave-assisted synthesis and characterizations of magnesium hydroxide (Mg(OH){sub 2}) nanosheet networks. Black-Right-Pointing-Pointer Fabrication of ethanol sensor based on (Mg(OH){sub 2}) nanosheet networks. Black-Right-Pointing-Pointer Good sensitivity ({approx}3.991 {mu}A cm{sup -2} mM{sup -1}) and lower detection limit (5 {mu}M). Black-Right-Pointing-Pointer This research opens a way to utilize Mg(OH){sub 2} nanostructures for chemical sensors applications. - Abstract: This paper reports a facile microwave-assisted synthesis of magnesium hydroxide (Mg(OH){sub 2}) nanosheet networks and their utilization for the fabrication of efficient ethanol chemical sensor. The synthesized nanosheets networks were characterized in terms of their morphological, structural and optical properties using various analysis techniques such as field emission scanning electron microscopy (FESEM), X-ray diffraction pattern (XRD), Fourier transform infrared (FTIR) and UV-Vis spectroscopy. The detailed morphological and structural investigations reveal that the synthesized (Mg(OH){sub 2}) products are nanosheet networks, grown in high density, and possessing hexagonal crystal structure. The optical band gap of as-synthesized Mg(OH){sub 2} nanosheet networks was examined by UV-Vis absorption spectrum, and found to be 5.76 eV. The synthesized nanosheet networks were used as supporting matrices for the fabrication of I-V technique based efficient ethanol chemical sensor. The fabricated ethanol sensor based on nanosheet networks exhibits good sensitivity ({approx}3.991 {mu}A cm{sup -2} mM{sup -1}) and lower detection limit (5 {mu}M), with linearity (R = 0.9925) in short response time (10.0 s). This work demonstrate that the simply synthesized Mg(OH){sub 2} nanosheet networks can effectively be used for the fabrication of efficient ethanol chemical sensors.

  15. Automated Microwave Double Resonance Spectroscopy: a Tool to Identify and Characterize Chemical Compounds

    Science.gov (United States)

    Martin-Drumel, Marie-Aline; McCarthy, Michael C.; Patterson, David; McGuire, Brett A.; Crabtree, Kyle N.

    2016-06-01

    Owing to its unparalleled structural specificity, rotational spectroscopy is a powerful technique to unambiguously identify and characterize volatile, polar molecules. We present here a new experimental approach, automated microwave double resonance (AMDOR) spectroscopy, to rapidly determine the rotational constants of these compounds without any a priori knowledge of elemental composition or molecular structure. This task is achieved by rapidly acquiring the classical (frequency vs. intensity) broadband spectrum of a molecule using chirped-pulse Fourier transform microwave (FTMW) spectroscopy, and subsequently analyzing it in near-real time using complementary cavity FTMW detection and double resonance. AMDOR measurements provide a unique ``barcode'' for each compound from which rotational constants can be extracted. To illustrate the power of this approach, AMDOR spectra of three aroma compounds --- trans-cinnamaldehyde, α- and β-ionone --- have been recorded and analyzed. The prospects to extend this approach to mixture characterization and purity assessment are described.

  16. Automated Microwave Double Resonance Spectroscopy: a Tool to Identify and Characterize Chemical Compounds

    Science.gov (United States)

    Martin-Drumel, Marie-Aline; McCarthy, Michael C.; Patterson, David; McGuire, Brett A.; Crabtree, Kyle N.

    2017-06-01

    Owing to its unparalleled structural specificity, rotational spectroscopy is a powerful technique to unambiguously identify and characterize polar molecules. We present here an experimental approach, automated microwave double resonance (AMDOR) spectroscopy, that allows to rapidly determine the rotational constants of such compounds without any a priori knowledge of elemental composition or molecular structure. This task is achieved by acquiring the classical (frequency vs. intensity) broadband spectrum of a molecule using chirped-pulse Fourier transform microwave (FTMW) spectroscopy, and subsequently analyzing it in near-real time using complementary cavity FTMW detection and double resonance. AMDOR measurements provide a unique ``barcode'' for each compound from which rotational constants can be extracted. Results obtained on the characterization of individual compounds and mixtures will be described.

  17. Plasma-enhanced growth, composition, and refractive index of silicon oxy-nitride films

    DEFF Research Database (Denmark)

    Mattsson, Kent Erik

    1995-01-01

    Secondary ion mass spectrometry and refractive index measurements have been carried out on silicon oxy-nitride produced by plasma-enhanced chemical vapor deposition (PECVD). Nitrous oxide and ammonia were added to a constant flow of 2% silane in nitrogen, to produce oxy-nitride films with atomic...... nitrogen concentrations between 2 and 10 at. %. A simple atomic valence model is found to describe both the measured atomic concentrations and published material compositions for silicon oxy-nitride produced by PECVD. A relation between the Si–N bond concentration and the refractive index is found....... This relation suggest that the refractive index of oxy-nitride with a low nitrogen concentration is determined by the material density. It is suggested that the relative oxygen concentration in the gas flow is the major deposition characterization parameter, and that water vapor is the predominant reaction by...

  18. Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

    Directory of Open Access Journals (Sweden)

    Chia-Man Chou

    2017-07-01

    Full Text Available We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD incorporated with radio-frequency (r.f.-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr. High oxygen vapor pressure (150 mTorr and low r.f. power (10 W are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

  19. Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

    Science.gov (United States)

    Chou, Chia-Man; Lai, Chih-Chang; Chang, Chih-Wei; Wen, Kai-Shin; Hsiao, Vincent K. S.

    2017-07-01

    We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO)-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD) incorporated with radio-frequency (r.f.)-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD)-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC) structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr). High oxygen vapor pressure (150 mTorr) and low r.f. power (10 W) are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

  20. Plasma Enhanced Growth of Carbon Nanotubes For Ultrasensitive Biosensors

    Science.gov (United States)

    Cassell, Alan M.; Li, J.; Ye, Q.; Koehne, J.; Chen, H.; Meyyappan, M.

    2004-01-01

    The multitude of considerations facing nanostructure growth and integration lends itself to combinatorial optimization approaches. Rapid optimization becomes even more important with wafer-scale growth and integration processes. Here we discuss methodology for developing plasma enhanced CVD growth techniques for achieving individual, vertically aligned carbon nanostructures that show excellent properties as ultrasensitive electrodes for nucleic acid detection. We utilize high throughput strategies for optimizing the upstream and downstream processing and integration of carbon nanotube electrodes as functional elements in various device types. An overview of ultrasensitive carbon nanotube based sensor arrays for electrochemical biosensing applications and the high throughput methodology utilized to combine novel electrode technology with conventional MEMS processing will be presented.

  1. Plasma Enhanced Growth of Carbon Nanotubes For Ultrasensitive Biosensors

    Science.gov (United States)

    Cassell, Alan M.; Li, J.; Ye, Q.; Koehne, J.; Chen, H.; Meyyappan, M.

    2004-01-01

    The multitude of considerations facing nanostructure growth and integration lends itself to combinatorial optimization approaches. Rapid optimization becomes even more important with wafer-scale growth and integration processes. Here we discuss methodology for developing plasma enhanced CVD growth techniques for achieving individual, vertically aligned carbon nanostructures that show excellent properties as ultrasensitive electrodes for nucleic acid detection. We utilize high throughput strategies for optimizing the upstream and downstream processing and integration of carbon nanotube electrodes as functional elements in various device types. An overview of ultrasensitive carbon nanotube based sensor arrays for electrochemical biosensing applications and the high throughput methodology utilized to combine novel electrode technology with conventional MEMS processing will be presented.

  2. Influence of microwave vacuum drying on glass transition temperature, gelatinization temperature, physical and chemical qualities of lotus seeds.

    Science.gov (United States)

    Zhao, Yingting; Jiang, Yajun; Zheng, Baodong; Zhuang, Weijing; Zheng, Yafeng; Tian, Yuting

    2017-08-01

    This study investigated the effects of microwave power density on effective moisture diffusion coefficient (Deff), glass transition temperature (Tg), gelatinization temperature (TP), physical and chemical qualities of lotus seeds during microwave vacuum drying. Deff increased by 42% and 127% at 15W/g and 20W/g, respectively, when compared with 10W/g. TP was negatively correlated with the relaxation times of T21 and T22, while Tg was negatively correlated with the relative areas A22. The rates of change of color were observed to be divided roughly into two periods, consisting of a rapid change caused by enzymatic browning and a slow change caused by non-enzymatic browning. An equation is provided to illustrate the relationship of k1 and k2 of Peleg's model depending on power density during rehydration kinetics. The samples at 20W/g exhibited the higher content of amino acid (540.19mg/100gd.b.) while lower starch (17.53g/100gd.b.).

  3. Antibacterial properties and chemical characterization of the essential oils from summer savory extracted by microwave-assisted hydrodistillation

    Directory of Open Access Journals (Sweden)

    Shila Rezvanpanah

    2011-12-01

    Full Text Available Antibacterial properties and chemical characterization of the essential oils from summer savory (Satureja hortensis extracted by microwave-assisted hydrodistillation (MAHD were compared with those of the essential oils extracted using the traditional hydrodistillation (HD method. While MAHD at 660 W required half as much time as HD needed, similar antibacterial efficacies were found from the essential oils obtained by the two extraction methods on two food pathogens (Staphylococcus aureus, a gram positive bacterium, and Escherchia coli, a gram negative bacterium. Also, as it was the case with the essential oils extracted by HD, that of MAHD indicated greater influence on S. aureus than on E. coli. The compositions of the extracted essential oils were also studied using GC-MS analysis. The same components with negligible differences in their quantities were found in the extracted essential oils using the two methods outlined above. Overall, to reduce the extraction time, MAHD can be applied at higher microwave levels without any compromise in the antibacterial properties of the essential oils extracted.

  4. Microwave plasma assisted chemical vapor deposition of ultra-nanocrystalline diamond films

    Science.gov (United States)

    Huang, Wen-Shin

    Microwave plasma assisted ultra-nanocrystalline diamond film deposition was investigated using hydrogen deficient, carbon containing argon plasma chemistries with MSU-developed microwave plasma reactors. Ultra-nanocrystalline diamond film deposition on mechanically scratched silicon wafers was experimentally explored over the following input variables: (1) pressure: 60--240Torr, (2) total gas flow rate: 101--642 sccm, (3) input microwave power 732--1518W, (4) substrate temperature: 500°C--770°C, (5) deposition time: 2--48 hours, and (6) N2 impurities 5--2500 ppm. H2 concentrations were less than 9%, while CH 4 concentration was 0.17--1.85%. It was desired to grow films uniformly over 3″ diameter substrates and to minimize the grain size. Large, uniform, intense, and greenish-white discharges were sustained in contact with three inch silicon substrates over a 60--240 Torr pressure regime. At a given operating pressure, film uniformity was controlled by adjusting substrate holder geometry, substrate position, input microwave power, gas chemistries, and total gas flow rates. Film ultra-nanocrystallinity and smoothness required high purity deposition conditions. Uniform ultra-nanocrystalline films were synthesized in low leak-rate system with crystal sizes ranging from 3--30 nm. Films with 11--50 nm RMS roughness and respective thickness values of 1--23 mum were synthesized over 3″ wafers under a wide range of different deposition conditions. Film RMS roughness 7 nm was synthesized with thickness of 430 nm. Film uniformities of almost 100% were achieved over three inch silicon wafers. UV Raman and XRD characterization results indicated the presence of diamond in the synthesized films. Optical Emission Spectroscopy measurements showed that the discharge gas temperature was in excess of 2000 K. The synthesized films are uniformly smooth and the as grown ultra-nanocrystalline diamond can be used for a high frequency SAW device substrate material. IR measurements

  5. Physi-chemical and sorption properties of biochars prepared from peanut shell using thermal pyrolysis and microwave irradiation.

    Science.gov (United States)

    Chu, Gang; Zhao, Jing; Chen, Fangyuan; Dong, Xudong; Zhou, Dandan; Liang, Ni; Wu, Min; Pan, Bo; Steinberg, Christian E W

    2017-08-01

    Microwave irradiation (MW) is an effective technique in heating and pyrolysis. This study compared the properties of peanut shell-biochars produced using MW and muffle furnace (FN). At the same pyrolysis temperature, MW biochars preserved more biomass (as indicated by their higher yields and higher abundance of functional groups) and possessed larger surface areas due to the high abundance of micropores. MW biochars generally exhibited higher adsorption of carbamazepine (CBZ) and bisphenol A (BPA) than FN biochars. However, their surface area-normalized sorption was lower, suggesting that the inner pores may not be fully available to CBZ and BPA sorption. We observed significant free radical signals in both types of biochars. Although CBZ and BPA did not degrade in the biochar sorption systems, the potential role of stronger free radical signals in MW biochars for organic contaminant control may not be overlooked in studies with other chemicals. Copyright © 2017 Elsevier Ltd. All rights reserved.

  6. [Study on the microwave extraction and chemical constituents of the essential oil from Amomum tsao-ko in Jinping, Yunnan province].

    Science.gov (United States)

    Yang, Lijuan; Zhang, Zheng; Li, Junfeng; Kong, Weiling; Lin, Jun

    2004-11-01

    Essential oil from Amomum tsao-ko collected in Jinping, Yunnan province was obtained by microwave extraction, common solvent extraction and vapor distillation, respectively. Chemical constituents were analyzed by GC-MS and their relative contents were determined by area-normalized method.

  7. Microwave-Assisted Extraction, Chemical Structures, and Chain Conformation of Polysaccharides from a Novel Cordyceps Sinensis Fungus UM01.

    Science.gov (United States)

    Cheong, Kit-Leong; Wang, Lan-Ying; Wu, Ding-Tao; Hu, De-Jun; Zhao, Jing; Li, Shao-Ping

    2016-09-01

    Cordyceps sinensis is a well-known tonic food with broad medicinal properties. The aim of the present study was to investigate the optimization of microwave-assisted extraction (MAE) and characterize chemical structures and chain conformation of polysaccharides from a novel C. sinensis fungus UM01. Ion-exchange and gel filtration chromatography were used to purify the polysaccharides. The chemical structure of purified polysaccharide was determined through gas chromatography-mass spectrometry. Moreover, high performance size exclusion chromatography combined with refractive index detector and multiangle laser light scattering were conducted to analyze the molecular weight (Mw ) and chain conformation of purified polysaccharide. Based on the orthogonal design L9 , optimal MAE conditions could be obtained through 1300 W of microwave power, with a 5-min irradiation time at a solid to water ratio of 1:60, generating the highest extraction yield of 6.20%. Subsequently, the polysaccharide UM01-S1 was purified. The UM01-S1 is a glucan-type polysaccharide with a (1→4)-β-d-glucosyl backbone and branching points located at O-3 of Glcp with a terminal-d-Glcp. The Mw , radius of gyration (Rg ) and hydrodynamic radius (Rh ) of UM01-S1 were determined as 5.442 × 10(6)  Da, 21.8 and 20.2 nm, respectively. Using the polymer solution theory, the exponent (ν) value of the power law function was calculated as 0.38, and the shape factor (ρ = Rg /Rh ) was 1.079, indicating that UM01-S1 has a sphere-like conformation with a branched structure in an aqueous solution. These results provide fundamental information for the future application of polysaccharides from cultured C. sinensis in health and functional food area. © 2016 Institute of Food Technologists®

  8. Physical and chemical proceses during the dissociation of H{sub 2}S-CO{sub 2} mixtures in microwave discharges

    Energy Technology Data Exchange (ETDEWEB)

    Bagautdinov, A.Z.; Zhivotov, V.K.; Musinov, S.V. [and others

    1992-07-01

    The mechanism for the plasma chemical dissociation of hydrogen sulfide mixed with carbon dioxide in a high-power microwave discharge is studied. The degree of dissociation in various regions of the discharge system and the longitudinal distribution of the composition of the products of this process at the edge of the discharge are determined experimentally. Turbulent flows are important in the realization of a high energy efficiency in the plasma chemical process.

  9. Determining the microwave coupling and operational efficiencies of a microwave plasma assisted chemical vapor deposition reactor under high pressure diamond synthesis operating conditions.

    Science.gov (United States)

    Nad, Shreya; Gu, Yajun; Asmussen, Jes

    2015-07-01

    The microwave coupling efficiency of the 2.45 GHz, microwave plasma assisted diamond synthesis process is investigated by experimentally measuring the performance of a specific single mode excited, internally tuned microwave plasma reactor. Plasma reactor coupling efficiencies (η) > 90% are achieved over the entire 100-260 Torr pressure range and 1.5-2.4 kW input power diamond synthesis regime. When operating at a specific experimental operating condition, small additional internal tuning adjustments can be made to achieve η > 98%. When the plasma reactor has low empty cavity losses, i.e., the empty cavity quality factor is >1500, then overall microwave discharge coupling efficiencies (η(coup)) of >94% can be achieved. A large, safe, and efficient experimental operating regime is identified. Both substrate hot spots and the formation of microwave plasmoids are eliminated when operating within this regime. This investigation suggests that both the reactor design and the reactor process operation must be considered when attempting to lower diamond synthesis electrical energy costs while still enabling a very versatile and flexible operation performance.

  10. Growth and characterization of large, high quality single crystal diamond substrates via microwave plasma assisted chemical vapor deposition

    Science.gov (United States)

    Nad, Shreya

    Single crystal diamond (SCD) substrates can be utilized in a wide range of applications. Important issues in the chemical vapor deposition (CVD) of such substrates include: shrinking of the SCD substrate area, stress and cracking, high defect density and hence low electronic quality and low optical quality due to high nitrogen impurities. The primary objective of this thesis is to begin to address these issues and to find possible solutions for enhancing the substrate dimensions and simultaneously improving the quality of the grown substrates. The deposition of SCD substrates is carried out in a microwave cavity plasma reactor via the microwave plasma assisted chemical vapor deposition technique. The operation of the reactor was first optimized to determine the safe and efficient operating regime. By adjusting the matching of the reactor cavity with the help of four internal tuning length variables, the system was further matched to operate at a maximum overall microwave coupling efficiency of ˜ 98%. Even with adjustments in the substrate holder position, the reactor remains well matched with a coupling efficiency of ˜ 95% indicating good experimental performance over a wide range of operating conditions. SCD substrates were synthesized at a high pressure of 240 Torr and with a high absorbed power density of 500 W/cm3. To counter the issue of shrinking substrate size during growth, the effect of different substrate holder designs was studied. An increase in the substrate dimensions (1.23 -- 2.5 times) after growth was achieved when the sides of the seeds were shielded from the intense microwave electromagnetic fields in a pocket holder design. Using such pocket holders, high growth rates of 16 -- 32 mum/hr were obtained for growth times of 8 -- 72 hours. The polycrystalline diamond rim deposition was minimized/eliminated from these growth runs, hence successfully enlarging the substrate size. Several synthesized CVD SCD substrates were laser cut and separated

  11. Microwave Plasma-Activated Chemical Vapor Deposition of Nitrogen-Doped Diamond. II: CH4/N2/H2 Plasmas.

    Science.gov (United States)

    Truscott, Benjamin S; Kelly, Mark W; Potter, Katie J; Ashfold, Michael N R; Mankelevich, Yuri A

    2016-11-03

    We report a combined experimental and modeling study of microwave-activated dilute CH4/N2/H2 plasmas, as used for chemical vapor deposition (CVD) of diamond, under very similar conditions to previous studies of CH4/H2, CH4/H2/Ar, and N2/H2 gas mixtures. Using cavity ring-down spectroscopy, absolute column densities of CH(X, v = 0), CN(X, v = 0), and NH(X, v = 0) radicals in the hot plasma have been determined as functions of height, z, source gas mixing ratio, total gas pressure, p, and input power, P. Optical emission spectroscopy has been used to investigate, with respect to the same variables, the relative number densities of electronically excited species, namely, H atoms, CH, C2, CN, and NH radicals and triplet N2 molecules. The measurements have been reproduced and rationalized from first-principles by 2-D (r, z) coupled kinetic and transport modeling, and comparison between experiment and simulation has afforded a detailed understanding of C/N/H plasma-chemical reactivity and variations with process conditions and with location within the reactor. The experimentally validated simulations have been extended to much lower N2 input fractions and higher microwave powers than were probed experimentally, providing predictions for the gas-phase chemistry adjacent to the diamond surface and its variation across a wide range of conditions employed in practical diamond-growing CVD processes. The strongly bound N2 molecule is very resistant to dissociation at the input MW powers and pressures prevailing in typical diamond CVD reactors, but its chemical reactivity is boosted through energy pooling in its lowest-lying (metastable) triplet state and subsequent reactions with H atoms. For a CH4 input mole fraction of 4%, with N2 present at 1-6000 ppm, at pressure p = 150 Torr, and with applied microwave power P = 1.5 kW, the near-substrate gas-phase N atom concentration, [N]ns, scales linearly with the N2 input mole fraction and exceeds the concentrations [NH]ns, [NH2]ns

  12. Plasma-enhanced synthesis of bactericidal quaternary ammonium thin layers on stainless steel and cellulose surfaces.

    Science.gov (United States)

    Jampala, Soujanya N; Sarmadi, M; Somers, E B; Wong, A C L; Denes, F S

    2008-08-19

    We have investigated bottom-up chemical synthesis of quaternary ammonium (QA) groups exhibiting antibacterial properties on stainless steel (SS) and filter paper surfaces via nonequilibrium, low-pressure plasma-enhanced functionalization. Ethylenediamine (ED) plasma under suitable conditions generated films rich in secondary and tertiary amines. These functional structures were covalently attached to the SS surface by treating SS with O 2 and hexamethyldisiloxane plasma prior to ED plasma treatment. QA structures were formed by reaction of the plasma-deposited amines with hexyl bromide and subsequently with methyl iodide. Structural compositions were examined by electron spectroscopy for chemical analysis and Fourier transform infrared spectroscopy, and surface topography was investigated with atomic force microscopy and water contact angle measurements. Modified SS surfaces exhibited greater than a 99.9% decrease in Staphylococcus aureus counts and 98% in the case of Klebsiella pneumoniae. The porous filter paper surfaces with immobilized QA groups inactivated 98.7% and 96.8% of S. aureus and K. pneumoniae, respectively. This technique will open up a novel way for the synthesis of stable and very efficient bactericidal surfaces with potential applications in development of advanced medical devices and implants with antimicrobial surfaces.

  13. Microwave enhanced alcoholysis of non-edible (algal, jatropha and pongamia) oils using chemically activated egg shell derived CaO as heterogeneous catalyst.

    Science.gov (United States)

    Joshi, Girdhar; Rawat, Devendra S; Sharma, Amit Kumar; Pandey, Jitendra K

    2016-11-01

    Microwave enhanced fast and efficient alcoholysis (methanolysis and ethanolysis) of non-edible oils (algal, jatropha and pongamia) is achieved using chemically activated waste egg shell derived CaO (i.e. CaO(cesp)) as heterogeneous catalyst. CaO(cesp) was extracted from waste chicken egg shell and further activated chemically by supporting transition metal oxide. The maximum conversion was achieved using 3wt% catalysts under 700W microwave irradiation and 10:1 alcohol/oil ratio in 6min. Alcoholysis using ZnO activated CaO(cesp) catalyst has shown higher reaction yields in comparison to other modified catalysts. Methanolysis has shown better biodiesel conversion in comparison to ethanolysis. The catalyst has shown longer lifetime and sustained activity after being used for four cycles. Due to more saturated fatty acid content; algal biodiesel has shown improved fuel properties in comparison to other biodiesels.

  14. Non-Covalent Interactions and Internal Dynamics in Pyridine-Ammonia a Combined Quantum-Chemical and Microwave Spectroscopy Study

    Science.gov (United States)

    Spada, Lorenzo; Tasinato, Nicola; Vazart, Fanny; Barone, Vincenzo; Caminati, Walther; Puzzarini, Cristina

    2017-06-01

    The 1:1 complex of ammonia with pyridine has been characterized by using state-of-the-art quantum-chemical computations combined with pulsed-jet Fourier-Transform microwave spectroscopy. The computed potential energy landscape pointed out the formation of a stable σ-type complex, which has been confirmed experimentally: the analysis of the rotational spectrum showed the presence of only one 1:1 pyridine - ammonia adduct. Each rotational transition is split into several components due to the internal rotation of NH_3 around its C_3 axis and to the hyperfine structure of both ^{14}N quadrupolar nuclei, thus providing the unequivocal proof that the two molecules form a σ-type complex involving both a N-H\\cdotsN and a C-H\\cdotsN hydrogen bond. The dissociation energy (BSSE and ZPE corrected) has been estimated to be 11.5 kJ\\cdotmol^{-1}. This work represents the first application of an accurate, yet efficient computational scheme, designed for the investigation of small biomolecules, to a molecular cluster.

  15. Switchable hydrophobic-hydrophilic layer obtained onto porous alumina by plasma-enhanced fluorination

    Institute of Scientific and Technical Information of China (English)

    A.TRESSAUD; C.LABRUG(E)RE; E.DURAND; C.BRIGOULEIX; H.ANDRIESSEN

    2009-01-01

    Conventional lithographic printing processes using porous alumina for offset applications generally use "wet" routes. Recently "dry" processes have been developed which are based on a heat-induced hydrophilic/oleophilic conversion of one or more layers of the coating so that a stronger affinity to-wards ink or water fountain is created at the exposed areas with respect to the surface of the unex-posed coating. Treatments involving rf plasma-enhanced fluorination (PEF) constitute exceptional tools for modifying the surface properties of materials. Many advantages of these techniques can be indeed outlined, when compared to more conventional methods: room-temperature reactions, chemical modi-fications limited to surface only without changing the bulk properties, possible non-equilibrium reac-tions. The influence of PEF treatments on porous alumina layer used in printing plates has been tested with various fluorinated gases (CF4, C3F8and C4F8) and characterized by XPS. The hydrophobic prop-erties of the fluorinated layer have been deduced from contact angle measurements. Using C4Fs rf-PEF treatment, the outmost surface of the hydrophilic alumina substrate used for lithographic printing is hydrophobized, or in other words, the hydrophilic substrate is converted into a support with hydro-phobic properties. Once being hydrophobized, the surface layer may be rendered hydrophilic using a heat pulse, thus giving rise to switchable hydrophobic-hydrophilic properties of the material.

  16. Facile plasma-enhanced deposition of ultrathin crosslinked amino acid films for conformal biometallization.

    Science.gov (United States)

    Anderson, Kyle D; Slocik, Joseph M; McConney, Michael E; Enlow, Jesse O; Jakubiak, Rachel; Bunning, Timothy J; Naik, Rajesh R; Tsukruk, Vladimir V

    2009-03-01

    A novel method for the facile fabrication of conformal, ultrathin, and uniform synthetic amino acid coatings on a variety of practical surfaces by plasma-enhanced chemical vapor deposition is introduced. Tyrosine, which is utilized as an agent to reduce gold nanoparticles from solution, is sublimed into the plasma field and directly deposited on a variety of substrates to form a homogeneous, conformal, and robust polyamino acid coating in a one-step, solvent-free process. This approach is applicable to many practical surfaces and allows surface-induced biometallization while avoiding multiple wet-chemistry treatments that can damage many soft materials. Moreover, by placing a mask over the substrate during deposition, the tyrosine coating can be micropatterned. Upon its exposure to a solution of gold chloride, a network of gold nanoparticles forms on the surface, replicating the initial micropattern. This method of templated biometallization is adaptable to a variety of practical inorganic and organic substrates, such as silicon, glass, nitrocellulose, polystyrene, polydimethylsiloxane, polytetrafluoroethylene, polyethylene, and woven silk fibers. No special pretreatment is necessary, and the technique results in a rapid, conformal amino acid coating that can be utilized for further biometallization.

  17. Switchable hydrophobic-hydrophilic layer obtained onto porous alumina by plasma-enhanced fluorination

    Institute of Scientific and Technical Information of China (English)

    A.; TRESSAUD; C.; LABRUGèRE; E.; DURAND; C.; BRIGOULEIX; H.; ANDRIESSEN

    2009-01-01

    Conventional lithographic printing processes using porous alumina for offset applications generally use "wet" routes. Recently "dry" processes have been developed which are based on a heat-induced hydrophilic/oleophilic conversion of one or more layers of the coating so that a stronger affinity to-wards ink or water fountain is created at the exposed areas with respect to the surface of the unex-posed coating. Treatments involving rf plasma-enhanced fluorination (PEF) constitute exceptional tools for modifying the surface properties of materials. Many advantages of these techniques can be indeed outlined, when compared to more conventional methods: room-temperature reactions, chemical modi-fications limited to surface only without changing the bulk properties, possible non-equilibrium reac-tions. The influence of PEF treatments on porous alumina layer used in printing plates has been tested with various fluorinated gases (CF4, C3F8 and C4F8) and characterized by XPS. The hydrophobic prop-erties of the fluorinated layer have been deduced from contact angle measurements. Using C4F8 rf-PEF treatment, the outmost surface of the hydrophilic alumina substrate used for lithographic printing is hydrophobized, or in other words, the hydrophilic substrate is converted into a support with hydro-phobic properties. Once being hydrophobized, the surface layer may be rendered hydrophilic using a heat pulse, thus giving rise to switchable hydrophobic-hydrophilic properties of the material.

  18. Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon

    Science.gov (United States)

    Chen, Wanghua; Cariou, Romain; Hamon, Gwenaëlle; Léal, Ronan; Maurice, Jean-Luc; Cabarrocas, Pere Roca i

    2017-01-01

    Solar cells based on epitaxial silicon layers as the absorber attract increasing attention because of the potential cost reduction. In this work, we studied the influence of the deposition rate on the structural properties of epitaxial silicon layers produced by plasma-enhanced chemical vapor deposition (epi-PECVD) using silane as a precursor and hydrogen as a carrier gas. We found that the crystalline quality of epi-PECVD layers depends on their thickness and deposition rate. Moreover, increasing the deposition rate may lead to epitaxy breakdown. In that case, we observe the formation of embedded amorphous silicon cones in the epi-PECVD layer. To explain this phenomenon, we develop a model based on the coupling of hydrogen and built-in strain. By optimizing the deposition conditions to avoid epitaxy breakdown, including substrate temperatures and plasma potential, we have been able to synthesize epi-PECVD layers up to a deposition rate of 8.3 Å/s. In such case, we found that the incorporation of hydrogen in the hydrogenated crystalline silicon can reach 4 at. % at a substrate temperature of 350 °C. PMID:28262840

  19. Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition

    CERN Document Server

    Kim, H

    2002-01-01

    We have investigated the growth kinetics of plasma-enhanced Ti atomic layer deposition (ALD) using a quartz crystal microbalance. Ti ALD films were grown at temperatures from 20 to 200 deg. C using TiCl sub 4 as a source gas and rf plasma-produced atomic H as the reducing agent. Postdeposition ex situ chemical analyses of thin films showed that the main impurity is oxygen, mostly incorporated during the air exposure prior to analysis. The thickness per cycle, corresponding to the growth rate, was measured by quartz crystal microbalance as a function of various key growth parameters, including TiCl sub 4 and H exposure time, rf plasma power, and sample temperature. The growth rates were independent of TiCl sub 4 exposure above 1x10 sup 3 L, indicating typical ALD mode growth. The key kinetic parameters for Cl extraction reaction and TiCl sub 4 adsorption kinetics were obtained and the growth kinetics were modeled to predict the growth rates based upon these results. Also, the dependency of growth kinetics on d...

  20. Plasma-enhanced synthesis of surfaces that kill bacteria on contact

    Science.gov (United States)

    Jampala, Soujanya Naga

    High incidences of microbial contamination and infections are a major concern in all existing and evolving technologies of medicine and biology. The propensity towards infections is directly related to bacterial colonization and biofilms on surfaces. This dissertation presents the development of surfaces that can kill bacteria on contact by using cold plasma technology. Quaternary ammonium (QA) groups are known to exhibit antibacterial characteristics in water-based environments. To overcome the limitations of residual toxicity, alternative strategies involving covalent attachment of QA groups to metallic and cellulosic surfaces have been developed. Low pressure, non-equilibrium plasma-enhanced functionalization and subsequent ex situ chemical reactions were designed for step-by-step "bottom-up" chemical synthesis of QA groups covalently anchored to surfaces. The plasma processes under selected discharge parameters generated structure- and functionality-controlled crosslinked networks of macromolecular layers with high concentrations of reactive amine groups. Subsequent derivatization of the plasma-deposited films with alkyl halides yielded surface-bound QA groups rendering surfaces with high bactericidal efficacy against Gram-positive Staphylococcus aureus and Gram-negative Klebsiella pneumoniae. Stainless steel and cotton surfaces sequentially treated with ethylene diamine plasma, n-hexyl bromide and methyl iodide exhibited at least 99.9% and 98% kill of S. aureus and K. pneumoniae respectively. The influence of chemical architecture of QA groups with different alkyl substituents on the efficacy of bactericidal surfaces was quantified. Results from this work will permit the development of novel plasma-aided technologies for the synthesis of antibacterial surfaces with potential biomedical applications. The cold plasma approach can be used on any solid material surfaces including polymers, metals, ceramics and semiconductors.

  1. Plasma enhanced vortex fluidic device manipulation of graphene oxide.

    Science.gov (United States)

    Jones, Darryl B; Chen, Xianjue; Sibley, Alexander; Quinton, Jamie S; Shearer, Cameron J; Gibson, Christopher T; Raston, Colin L

    2016-08-25

    A vortex fluid device (VFD) with non-thermal plasma liquid processing within dynamic thin films has been developed. This plasma-liquid microfluidic platform facilitates chemical processing which is demonstrated through the manipulation of the morphology and chemical character of colloidal graphene oxide in water.

  2. Microwave Enhanced Reactive Distillation

    NARCIS (Netherlands)

    Altman, E.

    2011-01-01

    The application of electromagnetic irradiation in form of microwaves (MW) has gathered the attention of the scientific community in recent years. MW used as an alternative energy source for chemical syntheses (microwave chemistry) can provide clear advantages over conventional heating methods in ter

  3. Effect of pre-cooking methods on the chemical and sensory deterioration of ready-to-eat chicken patties during chilled storage and microwave reheating.

    Science.gov (United States)

    Ferreira, Valquíria C S; Morcuende, David; Madruga, Marta S; Hernández-López, Silvia H; Silva, Fábio A P; Ventanas, Sonia; Estévez, Mario

    2016-06-01

    The effects of pre-cooking methods, namely, boiling (BL), roasting (RT) and grilling (GR), refrigerated storage (14 days/+4 °C) and microwave reheating on chicken patties were studied. Physical, chemical and sensory parameters were evaluated in order to correlate the chemical deterioration of ready-to-eat chicken patties with the acceptance of the odor. Chemical deterioration was evaluated through the chemical composition, Maillard compounds, Thiobarbituric acid-reactive substances (TBARS) and volatiles. Sensory deterioration (odor liking) was performed by an acceptance test with hedonic scale. According to the TBARS values and volatile compounds generated in the head space during the examined stages, the pre-cooking method and the storage time had a significant effect on lipid oxidation, whereas reheating in a microwave had a negligible impact. At each succeeding processing stage, panelists gave lower odor scores to all samples and no significant differences were found between treatments at any stage. RT and GR patties showed less intense chemical changes and presented higher acceptation scores by the sensory panel than BL patties. Thus, the choice of pre-cooking method and control of storage conditions plays a key role in the inhibition of oxidative changes in ready-to-eat chicken patties.

  4. A novel method for production of activated carbon from waste tea by chemical activation with microwave energy

    Energy Technology Data Exchange (ETDEWEB)

    Emine Yagmur; Meryem Ozmak; Zeki Aktas [Ankara University, Ankara (Turkey). Faculty of Engineering

    2008-11-15

    This study presents the production of activated carbon from waste tea. Activated carbons were prepared by phosphoric acid activation with and without microwave treatment and carbonisation of the waste tea under nitrogen atmosphere at various temperatures and different phosphoric acid/precursor impregnation ratios. The surface properties of the activated carbons were investigated by elemental analysis, BET surface area, SEM, FTIR. Prior to heat treatment conducted in a furnace, the mixture of the waste tea and H{sub 3}PO{sub 4} was treated with microwave heating. The maximum BET surface area was 1157 m{sup 2}/g for the sample treated with microwave energy and then carbonised at 350{sup o}C. In case of application of conventional method, the BET surface area of the resultant material was 928.8 m{sup 2}/g using the same precursor and conditions. According to the Dubinin-Radushkevich (DR) method the micropore surface area for the sample treated with microwave energy was higher than the sample obtained from the conventional method. Results show that microwave heating reasonably influenced the micropore surface area of the samples as well as the BET surface area. The samples activated were also characterised in terms of the cumulative pore and micropore volumes according to the BJH, DR and t-methods, respectively. 35 refs., 6 figs., 4 tabs.

  5. Plasma enhanced C1 chemistry for green technology

    Science.gov (United States)

    Nozaki, Tomohiro

    2013-09-01

    Plasma catalysis is one of the innovative next generation green technologies that meet the needs for energy and materials conservation as well as environmental protection. Non-thermal plasma uniquely generates reactive species independently of reaction temperature, and these species are used to initiate chemical reactions at unexpectedly lower temperatures than normal thermochemical reactions. Non-thermal plasma thus broadens the operation window of existing chemical conversion processes, and ultimately allows modification of the process parameters to minimize energy and material consumption. We have been specifically focusing on dielectric barrier discharge (DBD) as one of the viable non-thermal plasma sources for practical fuel reforming. In the presentation, room temperature one-step conversion of methane to methanol and hydrogen using a miniaturized DBD reactor (microplasma reactor) is highlighted. The practical impact of plasma technology on existing C1-chemistry is introduced, and then unique characteristics of plasma fuel reforming such as non-equilibrium product distribution is discussed.

  6. Synthesis of alumina-α using chemical and activation energy por microwave; Sintese de alumina-α utilizando ativacao quimica e energia por microondas

    Energy Technology Data Exchange (ETDEWEB)

    Cartaxo, J.M.; Galdino, M.N.; Neves, G.A., E-mail: juliana@dema.ufcg.edu.br [Universidade Federal de Campina Grande (DEMA/UFCG), PB (Brazil). Unidade Academica de Engenharia de Materiais; Campos, L.F.A.; Menezes, R.R. [Universidade Federal da Paraiba (UFPB), PB (Brazil). Dept. de Engenharia de Materiais; Kiminami, R.H.G.A. [Universidade Federal de Sao Carlos (UFSC), SP (Brazil)

    2012-07-01

    With the great technological advances of alumina, this study aimed to synthesize the α-alumina and chemical activation using microwave energy from aluminum nitrate precursor. The synthesized powders were characterized by X-ray diffraction, thermal analysis (DTA and TGA) and surface area by BET. The chemical activation process was conducted by varying the concentration of the acid solution and exposure time of the material solution. The results proved the effectiveness of chemical activation by accelerating the synthesis process. The results of thermal analysis can observe the thermal decomposition temperature and the possible nucleation of new phases of alumina. The results of X-ray diffraction showed that the powders have the structure of α-alumina with specific areas ranging from 3 to 15m{sup 2}/g pore diameters between 190 to 485nm. (author)

  7. Novel ultra-low temperature co-fired microwave dielectric ceramic at 400 degrees and its chemical compatibility with base metal

    Science.gov (United States)

    di, Zhou; Li-Xia, Pang; Ze-Ming, Qi; Biao-Bing, Jin; Xi, Yao

    2014-08-01

    A novel NaAgMoO4 material with spinel-like structure was synthesized by using the solid state reaction method and the ceramic sample was well densified at an extreme low sintering temperature about 400°C. Rietveld refinement of the crystal structure was performed using FULLPROF program and the cell parameters are a = b = c = 9.22039 Å with a space group F D -3 M (227). High performance microwave dielectric properties, with a permittivity ~7.9, a Qf value ~33,000 GHz and a temperature coefficient of resonant frequency ~-120 ppm/°C, were obtained. From X-ray diffraction (XRD) and Energy Dispersive Spectrometer (EDS) analysis of the co-fired sample, it was found that the NaAgMoO4 ceramic is chemically compatible with both silver and aluminum at the sintering temperature and this makes it a promising candidate for the ultra-low temperature co-fired ceramics technology. Analysis of infrared and THz spectra indicated that dielectric polarizability at microwave region of the NaAgMoO4 ceramic was equally contributed by ionic displasive and electronic polarizations. Its small microwave dielectric permittivity can also be explained well by the Shannon's additive rule.

  8. 用于回流化学反应的微波加热装置的改进%Improvement of Microwave Oven Used for Reflux Chemical Reaction

    Institute of Scientific and Technical Information of China (English)

    杨鸿生; 王善进; 徐耀忠; 王惠燕; 孙德坤; 陈晶

    2000-01-01

    对普通微波炉改装成用于回流化学反应的微波加热装置所用含有玻璃管的截止波导进行了理论分析、设计计算和实验测量。%In this paper, the cut-off waveguide with a glass tube, which is used in the microwave oven developed from the usual one for chemical reaction, is theoretically analyzed, designed and calculated. Experiments are carried on also.

  9. Microwave engineering

    CERN Document Server

    Pozar, David M

    2012-01-01

    The 4th edition of this classic text provides a thorough coverage of RF and microwave engineering concepts, starting from fundamental principles of electrical engineering, with applications to microwave circuits and devices of practical importance.  Coverage includes microwave network analysis, impedance matching, directional couplers and hybrids, microwave filters, ferrite devices, noise, nonlinear effects, and the design of microwave oscillators, amplifiers, and mixers. Material on microwave and RF systems includes wireless communications, radar, radiometry, and radiation hazards. A large

  10. A microwave powered sensor assembly for microwave ovens

    DEFF Research Database (Denmark)

    2016-01-01

    The present invention relates to a microwave powered sensor assembly for micro- wave ovens. The microwave powered sensor assembly comprises a microwave antenna for generating an RF antenna signal in response to microwave radiation at a predetermined excitation frequency. A dc power supply circuit...... of the microwave powered sensor assembly is operatively coupled to the RF antenna signal for extracting energy from the RF antenna signal and produce a power supply voltage. A sensor is connected to the power supply voltage and configured to measure a physical or chemical property of a food item under heating...

  11. Internal rotation potential and structure of six fluorine substituted nitrobenzenes studied by microwave spectroscopy supported by quantum chemical calculations

    DEFF Research Database (Denmark)

    Larsen, Niels Wessel; Nielsen, Ole Vesterlund

    2014-01-01

    Microwave spectra of the vibrational ground state and several torsionally excited states were used to investigate the internal rotation potential and the structure of six fluorine substituted nitrobenzenes: 3-fluoro- and 4-fluoronitrobenzene were planar molecules just as nitrobenzene whereas 2...

  12. Temperature-dependent electrical and photo-sensing properties of horizontally-oriented carbon nanotube networks synthesized by sandwich-growth microwave plasma chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Teng, I-Ju [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Hsu, Hui-Lin [Department of Electrical and Computer Engineering, University of Toronto, Toronto M5S 3G4 (Canada); Jian, Sheng-Rui, E-mail: srjian@gmail.com [Department of Materials Science and Engineering, I-Shou University, Kaohsiung 84041, Taiwan (China); Wang, Li-Chun; Chen, Kai-Ling [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Kuo, Cheng-Tzu, E-mail: kurt.kuotw@gmail.com [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Pan, Fu-Ming [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Wang, Wei-Hsiang [Teraxtal Technology Corporation, Hsinchu 30075, Taiwan (China); Juang, Jenh-Yih [Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

    2013-02-01

    The electrical and photo-sensing properties of horizontally-oriented interconnected carbon nanotube networks (CNT-NWs) prepared by means of a microwave plasma chemical vapor deposition sandwich-growth process are investigated. The temperature-dependent dark and illuminated current–voltage and transfer characteristics of CNT-NW-assisted devices are measured. Results show that the current–voltage characteristics of the devices exhibit nonlinear behavior, and the current can be further modulated by a gate voltage, revealing p-type semiconducting behavior with a device mobility of ∼ 14.5 cm{sup 2}/V·s and an on-off current ratio of ∼ 10{sup 3}. Moreover, when the CNT-NW-assisted devices are irradiated with 1.25–25 μm infrared (IR) from 300 to 11 K, the photo currents increase approximately 1.1- to 2.7-fold compared to the dark currents at ± 2 V bias voltage. Such results demonstrate that the presented CNT-NWs have high potential for IR photo-sensor applications. - Highlights: ► Horizontally-oriented interconnected carbon nanotube networks (CNT-NWs) were grown. ► A microwave plasma chemical vapor deposition sandwich-growth process was employed. ► Temperature-dependent electrical and photo-sensing properties were investigated. ► Devices based on CNT-NWs exhibit promising transistor characteristics. ► CNT-NWs are capable to detect light in the infrared wavelength range.

  13. Review on the intensification of chemical engineering processes by microwave%微波强化化工过程技术进展

    Institute of Scientific and Technical Information of China (English)

    王笃政; 孙永杰; 孙彬峰; 贾兴龙; 张红富; 向阳

    2012-01-01

    The intensification of chemical engineering processes is the main way of energy saving and emission reduction in enterprises. There are several methods of intensificatio in chemical engineering processes. In this paper, the enhancement intensification by microwave in the processes of catalysis, synthesis, extraction, degradation and demulsification are briefly introduced. The intensification effect and application progress are also recommended.%化工过程强化是企业节能减排的主要途径,化工过程强化手段有多种,简要介绍了微波在催化、合成、萃取、降解及破乳过程的强化作用机理,并介绍了微波在这些过程中的强化效果与应用进展。

  14. Preparation of highly photocatalytic active CdS/TiO{sub 2} nanocomposites by combining chemical bath deposition and microwave-assisted hydrothermal synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Li, Li, E-mail: qqhrll@163.com [College of Materials Science and Engineering, Qiqihar University, Qiqihar 161006 (China); Key Laboratory of Composite Modified Material of Colleges in Heilongjiang Province, Qiqihar 161006 (China); Wang, Lili [College of Materials Science and Engineering, Qiqihar University, Qiqihar 161006 (China); Hu, Tianyu [College of Environment and Resources, Jilin University, Changchun 130024 (China); Zhang, Wenzhi; Zhang, Xiuli; Chen, Xi [College of Materials Science and Engineering, Qiqihar University, Qiqihar 161006 (China)

    2014-10-15

    CdS/TiO{sub 2} nanocomposites were prepared from Cd and Ti (1:1 M ratio) using cetyltrimethylammonium bromide by a two-step chemical bath deposition (CBD) and microwave-assisted hydrothermal synthesis (MAHS) method. A series of nanocomposites with different morphologies and activities were prepared by varying the reaction time in the MAHS (2, 4, and 6 h). The crystal structure, morphology, and surface physicochemical properties of the nanocomposites were characterized by X-ray diffraction, UV–visible diffuse reflectance spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, and N{sub 2} adsorption–desorption measurements. The results show that the CdS/TiO{sub 2} nanocomposites were composed of anatase TiO{sub 2} and hexagonal CdS phases with strong absorption in the visible region. The surface morphologies changed slightly with increasing microwave irradiation time, while the Brunauer–Emmett–Teller surface area increased remarkably. The photocatalytic degradation of methyl orange (MO) was investigated under UV light and simulated sunlight irradiation. The photocatalytic activity of the CdS/TiO{sub 2} (6 h) composites prepared by the MAHS method was higher than those of CdS, P25, and other CdS/TiO{sub 2} nanocomposites. The CdS/TiO{sub 2} (6 h) nanocomposites significantly affected the UV and microwave-assisted photocatalytic degradation of different dyes. To elucidate the photocatalytic reaction mechanism for the CdS/TiO{sub 2} nanocomposites, controlled experiments were performed by adding different radical scavengers. - Graphical abstract: CdS/TiO{sub 2} nanocomposites were prepared using CTAB by CBD combined with MAHS method. In addition, with increasing microwave irradiation time, the morphology of CdS/TiO{sub 2} changed from popcorn-like to wedge-like structure. - Highlights: • The CdS/TiO{sub 2} was prepared by CBD combined with MAHS two-step method under CTAB. • The morphologies of as-samples were different with the time of

  15. Microwave Ovens

    Science.gov (United States)

    ... ovens heat food using microwaves, a form of electromagnetic radiation similar to radio waves. Microwaves have three characteristics ... that their microwave oven products meet the strict radiation safety standard ... if your microwave oven has damage to its door hinges, latches, or seals, or ...

  16. Microwave imaging

    CERN Document Server

    Pastorino, Matteo

    2010-01-01

    An introduction to the most relevant theoretical and algorithmic aspects of modern microwave imaging approaches Microwave imaging-a technique used in sensing a given scene by means of interrogating microwaves-has recently proven its usefulness in providing excellent diagnostic capabilities in several areas, including civil and industrial engineering, nondestructive testing and evaluation, geophysical prospecting, and biomedical engineering. Microwave Imaging offers comprehensive descriptions of the most important techniques so far proposed for short-range microwave imaging-in

  17. Rapid adsorption of toxic Pb(II) ions from aqueous solution using multiwall carbon nanotubes synthesized by microwave chemical vapor deposition technique.

    Science.gov (United States)

    Mubarak, Nabisab Mujawar; Sahu, Jaya Narayan; Abdullah, Ezzat Chan; Jayakumar, Natesan Subramanian

    2016-07-01

    Multiwall carbon nanotubes (MWCNTs) were synthesized using a tubular microwave chemical vapor deposition technique, using acetylene and hydrogen as the precursor gases and ferrocene as catalyst. The novel MWCNT samples were tested for their performance in terms of Pb(II) binding. The synthesized MWCNT samples were characterized using Fourier Transform Infrared (FT-IR), Brunauer, Emmett and Teller (BET), Field Emission Scanning Electron Microscopy (FESEM) analysis, and the adsorption of Pb(II) was studied as a function of pH, initial Pb(II) concentration, MWCNT dosage, agitation speed, and adsorption time, and process parameters were optimized. The adsorption data followed both Freundlich and Langmuir isotherms. On the basis of the Langmuir model, Qmax was calculated to be 104.2mg/g for the microwave-synthesized MWCNTs. In order to investigate the dynamic behavior of MWCNTs as an adsorbent, the kinetic data were modeled using pseudo first-order and pseudo second-order equations. Different thermodynamic parameters, viz., ∆H(0), ∆S(0) and ∆G(0) were evaluated and it was found that the adsorption was feasible, spontaneous and endothermic in nature. The statistical analysis revealed that the optimum conditions for the highest removal (99.9%) of Pb(II) are at pH5, MWCNT dosage 0.1g, agitation speed 160r/min and time of 22.5min with the initial concentration of 10mg/L. Our results proved that microwave-synthesized MWCNTs can be used as an effective Pb(II) adsorbent due to their high adsorption capacity as well as the short adsorption time needed to achieve equilibrium.

  18. Performance of a novel microwave-based treatment technology for atrazine removal and destruction: Sorbent reusability and chemical stability, and effect of water matrices

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Erdan; Hu, Yuanan [State Key Laboratory of Organic Geochemistry, Guangzhou Institute of Geochemistry, Chinese Academy of Sciences, Guangzhou 510640 (China); Cheng, Hefa, E-mail: hefac@umich.edu [State Key Laboratory of Organic Geochemistry, Guangzhou Institute of Geochemistry, Chinese Academy of Sciences, Guangzhou 510640 (China); MOE Laboratory for Earth Surface Processes, College of Urban and Environmental Sciences, Peking University, Beijing 100871 (China)

    2015-12-15

    Highlights: • Cu{sup 2+} and Fe{sup 3+} in zeolite pores enhance atrazine sorption and MW-induced degradation. • Exchanged zeolites perform well over multiple sorption–regeneration cycles. • Fe{sup 3+} species in the zeolite micropores have much greater stability than those of Cu{sup 2+}. • DOC in natural waters can compromise the sorption capacity of exchanged zeolites. • Iron-exchanged dealuminated Y zeolites hold great promise for practical applications. - Abstract: Transition metal-exchanged dealuminated Y zeolites were used to adsorb atrazine from aqueous solutions, followed by regeneration of the sorbents and destruction of the sorbed atrazine with microwave irradiation. Exchange of copper and iron into the zeolite's micropores significantly enhanced its sorption capacity and selectivity toward atrazine, and increased the microwave-induced degradation rate of the sorbed atrazine by 3–4-folds. Both the copper- and iron-exchanged zeolites could be regenerated and reused multiple times, while the catalytic activity of the latter was more robust due to the much greater chemical stability of Fe{sup 3+} species in the micropores. The presence of humic acid, and common cations and anions had little impact on the sorption of atrazine on the transition metal-exchanged zeolites. In the treatment of atrazine spiked in natural surface water and groundwater samples, sorptive removal of atrazine was found to be impacted by the level of dissolved organic carbon, probably through competition for the micropore spaces and pore blocking, while the water matrices exhibited no strong effect on the microwave-induced degradation of sorbed atrazine. Overall, iron-exchanged dealuminated Y zeolites show great potential for removal and destruction of atrazine from contaminated surface water and groundwater in practical implementation of the novel treatment technology.

  19. Growth of carbon nanofibers in plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Denysenko, Igor; Ostrikov, Kostya; Tam, Eugene

    2008-10-01

    A theoretical model describing the plasma-assisted growth of carbon nanofibers with metal catalyst particles on top is proposed. Using the model, the plasma-related effects on the nanofiber growth parameters such us the surface diffusion growth rate, the effective carbon flux to the catalyst surface, the characteristic residence time and diffusion length of carbon on the catalyst surface, and the surface coverages, have been studied. It has been found how these parameters depend on the catalyst surface temperature and ion and etching gas fluxes to the catalyst surface. The optimum conditions under which a low-temperature plasma environment can benefit the carbon nanofiber growth are formulated. It has been also found how the plasma environment affects the temperature distribution over the length of the carbon nanofibers. Conditions when the temperature of the catalyst nanoparticles is higher than the temperature of the substrate holder are determined. The results here are in a good agreement with the available experimental data on the carbon nanofiber growth and can be used for optimizing synthesis of nanoassemblies in low-temperature plasma-assisted nanofabrication.

  20. Plasma enhanced chemical vapor deposition of ZrO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Saravanan, K.

    1993-12-09

    Amorphous ZrO{sub 2} thin films were deposited in an inductively coupled PECVD system using a Zr {beta}-diketonate, Zr(C{sub 11}H{sub 19}O{sub 2}){sub 4}, as the precursor. The deposits were air annealed at 900C for 5 min to get pure, single phase, oriented, polycrystalline {alpha}-ZrO{sub 2}. Feasibility of using 2 different types of reactors was investigated. The inductively heated horizontal reactor depositions at 600C had a lower deposition rate and the films were non-uniform in thickness with a columnar structure. The resistively heated vertical reactor depositions at 350C had a higher deposition rate and the films were more uniform in thickness with a fine grained microstructure. The statistical design was demonstrated as an effective technique to analyze the effect of process conditions on the rate of deposition and relative (h00) orientation. The factorial design was used to quantify the two responses in terms of the process variables and their mutual interactions. The statistical design for rate of deposition was found to correlate with the trends observed in classical design.

  1. Glutamate biosensor based on carbon nanowalls grown using plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Tomatsu, Masakazu; Hiramatsu, Mineo; Kondo, Hiroki; Hori, Masaru

    2015-09-01

    Carbon nanowalls (CNWs) are composed of few-layer graphene standing almost vertically on the substrate. Due to the large surface area of vertical nanographene network, CNWs draw attention as platform for electrochemical sensing, biosensing and energy conversion applications. In this work, CNWs were grown on nickel substrate using inductively coupled plasma with methane/Ar mixture. After the CNW growth, the surface of CNWs was oxidized using Ar atmospheric pressure plasma to obtain super-hydrophilic surface. For the biosensing application, the surface of CNWs was decorated with platinum (Pt) nanoparticles by the reduction of hydrogen hexachloroplatinate (IV) solution. The resultant Pt particle size was estimated to be 3-4 nm. From the XPS analysis, pure Pt existed without being oxidized on the CNW surface. Electrochemical surface area of the Pt catalyst was evaluated by cyclic voltammetry. Pt-decorated CNWs will be used as an electrode for electrochemical glutamate biosensing. L-glutamate is one of the most important in the mammalian central nervous system, playing a vital role in many physiological processes. Nanoplatform based on vertical nanographene offers great promise for providing a new class of nanostructured electrodes for electrochemical sensing.

  2. Microwave-Assisted Olefin Metathesis

    Science.gov (United States)

    Nicks, François; Borguet, Yannick; Sauvage, Xavier; Bicchielli, Dario; Delfosse, Sébastien; Delaude, Lionel; Demonceau, Albert

    Since the first reports on the use of microwave irradiation to accelerate organic chemical transformations, a plethora of papers have been published in this field. In most examples, microwave heating has been shown to dramatically reduce reaction times, increase product yields, and enhance product purity by reducing unwanted side reactions compared to conventional heating methods. The present contribution aims at illustrating the advantages of this technology in olefin metathesis and, when data are available, at comparing microwave-heated and conventionally heated experiments

  3. Microwave Plasma Chemical Vapor Deposition of Nano-Structured Sn/C Composite Thin-Film Anodes for Li-ion Batteries

    Energy Technology Data Exchange (ETDEWEB)

    Stevenson, Cynthia; Marcinek, M.; Hardwick, L.J.; Richardson, T.J.; Song, X.; Kostecki, R.

    2008-02-01

    In this paper we report results of a novel synthesis method of thin-film composite Sn/C anodes for lithium batteries. Thin layers of graphitic carbon decorated with uniformly distributed Sn nanoparticles were synthesized from a solid organic precursor Sn(IV) tert-butoxide by a one step microwave plasma chemical vapor deposition (MPCVD). The thin-film Sn/C electrodes were electrochemically tested in lithium half cells and produced a reversible capacity of 440 and 297 mAhg{sup -1} at C/25 and 5C discharge rates, respectively. A long term cycling of the Sn/C nanocomposite anodes showed 40% capacity loss after 500 cycles at 1C rate.

  4. Deposition and Characterization of Nanocrystalline Diamond Films on Mirror-Polished Si Substrate by Biased Enhanced Microwave Plasma Chemical Vapor Deposition

    Science.gov (United States)

    Soga, T.; Sharda, T.; Jimbo, T.; Umeno, M.

    Hard and smooth nanocrystalline diamond (NCD) thin films were deposited on polished silicon substrates by biased enhanced growth in microwave plasma chemical vapor deposition. The films deposited with varying the methane concentration and biasing voltage were characterized by Raman spectroscopy, nano-indenter, x-ray diffraction and atomic force microscopy. Stress in the films increases with decreasing methane concentration in the gas-phase and with increasing biasing. The adhesion between NCD film and Si substrate is very strong sustaining the compressive stress as high as high as 85 GPa. It was hypothesized that hydrogen content of the films and graphitic content of the films are responsible in generating stress. The hardness is well correlated with the Raman peak intensity ratio of NCD peak to G peak.

  5. Preparation of high-quality hydrogenated amorphous silicon film with a new microwave electron cyclotron resonance chemical vapour deposition system assisted with hot wire

    Institute of Scientific and Technical Information of China (English)

    Zhu Xiu-Hong; Chen Guang-Hua; Yin Sheng-Yi; Rong Yan-Dong; Zhang Wen-Li; Hu Yue-Hui

    2005-01-01

    The preparation of high-quality hydrogenated amorphous silicon (a-Si:H) film with a new microwave electron cyclotron resonance-chemical vapour deposition (MWECR-CVD) system assisted with hot wire is presented. In this system the hot wire plays an important role in perfecting the microstructure as well as improving the stability and the optoelectronic properties of the a-Si:H film. The experimental results indicate that in the microstructure of the a-Si:H film, the concentration of dihydride is decreased and a trace of microcrystalline occurs, which is useful to improve its stability, and that in the optoelectronic properties of the a-Si:H film, the deposition rate reaches above 2.0nm/s and the photosensitivity increases up to 4.71× 105.

  6. Growth and characterization of ZnO films deposited by chemical bath and annealed by microwaves (CBD-A{mu}W)

    Energy Technology Data Exchange (ETDEWEB)

    DIaz-Reyes, J [CIBA-IPN, Ex-Hacienda de San Juan Molino, Km. 1.5, Tepetitla, Tlaxcala, 90700 (Mexico); Martinez-Juarez, J; Garcia, M L; Galeazzi, R [CIDS-ICUAP, BUAP, 14 Sur y San Claudio S/N, CU. Edif. No. 137, Col. San Manuel, Puebla, Puebla 72570 (Mexico); Juarez, G, E-mail: jdiazr2001@yahoo.com [DIE-SEES, CINVESTAV-IPN, A. P. 14-740, Mexico, D. F. 07000 (Mexico)

    2010-06-15

    A study of the growth and the physical properties of ZnO films deposited by chemical bath technique and annealed by microwave are presented. For the deposition solution the molar ratio between zinc nitrate and urea is varied in a range of 1:1... 1:10. By X-ray obtains that layers have hexagonal polycrystalline wurtzite type unitary cell. The Raman spectra show the first order experimental Raman spectra of ZnO. The first order Raman modes are identified in the ZnO Raman spectra. The 300K photoluminescence shows radiative bands labelled by red, yellow, green and violet bands, which are associated to defects of oxygen and zinc vacancies. By EDS measurements determined their stoichiometry, which allows relating it with the intensity of radiative bands associated to oxygen and zinc vacancies.

  7. Effects of solvent-free microwave extraction on the chemical composition of essential oil of Calamintha nepeta (L.) Savi compared with the conventional production method.

    Science.gov (United States)

    Riela, Serena; Bruno, Maurizio; Formisano, Carmen; Rigano, Daniela; Rosselli, Sergio; Saladino, Maria Luisa; Senatore, Felice

    2008-04-01

    The essential oil of Calamintha nepeta has been obtained by solvent-free microwave extraction (SFME) and by classical hydrodistillation (HD). A comparative qualitative-quantitative study on the composition of the oils was carried out. A total of 38 compounds, constituting 97.6% of the oil, were identified in the oil obtained by SFME, whereas 46 compounds, representing 95.4% of the oil, were characterized in the HD oil. SFME-distilled oil is richer in lightly oxygenated monoterpenes (LOM) than HD oil. It also has a higher amount of sesquiterpenes and a lower quantity of hydrocarbon monoterpenes. HD oil seems to be affected by chemical changes more than SFME oil.

  8. A systematic study of the relationship among the morphological, structural and photoelectrochemical properties of ZnO nanorods grown using the microwave chemical bath deposition method

    Science.gov (United States)

    Oh, Sungjin; Ryu, Hyukhyun; Lee, Won-Jae

    2017-08-01

    In this study, zinc oxide (ZnO) nanostructures were grown on a ZnO seed layer/fluorine-doped tin oxide (FTO) substrate for different growth durations ranging from 5 to 40 min using the microwave chemical bath deposition method. We studied the effect of growth duration on the morphological, structural, optical and photoelectrochemical properties of the ZnO nanostructures. From this study, we found that the photoelectrochemical properties of the ZnO nanostructures were largely affected by their morphological and structural properties. As a result, we obtained the highest photocurrent density of 0.46 mA/cm2 (at 1.5 V vs. SCE) from the sample grown for 30 min.

  9. Synthesis of carbon nanotubes by plasma-enhanced CVD process: gas phase study of synthesis conditions

    OpenAIRE

    Guláš, Michal; Cojocaru, Costel Sorin; Fleaca, Claudiu; Farhat, Samir; Veis, Pavel; Le Normand, Francois

    2008-01-01

    International audience; To support experimental investigations, a model based on ChemkinTM software was used to simulate gas phase and surface chemistry during plasma-enhanced catalytic CVD of carbon nanotubes. According to these calculations, gas phase composition, etching process and growth rates are calculated. The role of several carbon species, hydrocarbon molecules and ions in the growth mechanism of carbon nanotubes is presented in this study. Study of different conditions of gas phase ...

  10. Synthesis of carbon nanbotubes by plasma-enhanced CVD process: gas phase study of synthesis conditions

    Science.gov (United States)

    Guláš, M.; Cojocaru, C. S.; Fleaca, C. T.; Farhat, S.; Veis, P.; Le Normand, F.

    2008-09-01

    To support experimental investigations, a model based on Chemkin^TM software was used to simulate gas phase and surface chemistry during plasma-enhanced catalytic CVD of carbon nanotubes. According to these calculations, gas phase composition, etching process and growth rates are calculated. The role of several carbon species, hydrocarbon molecules and ions in the growth mechanism of carbon nanotubes is presented in this study. Study of different conditions of gas phase activation sources and pressure is performed.

  11. A preliminary study on numerical simulation of microwave heating process for chemical reaction and discussion of hotspot and thermal runaway phe-nomenon

    Institute of Scientific and Technical Information of China (English)

    ZHAO Xiang; HUANG KaMa; YAN LiPing; YAO Yuan

    2009-01-01

    The nonlinear process of microwave heating chemical reaction is studied by means of numerical simulation. Especially, the variation of temperature in terms of space and time, as well as the hotspot and thermal runaway phenomena are discussed. Suppose the heated object is a cylinder and the inci-dent electromagnetic (EM) wave is plane wave, the problem turns out to be a coupling calculation of 2D multi-physical fields. The integral equation of EM field is solved using the method of moment (MoM) and the thermal conduction equation is solved using a semi-analysis method. Moreover, a method to determine the equivalent complex permittivity of reactant under the heating is presented in order to perform the calculation. The numerical results for water and a dummy chemical reaction (A) show that the hotspot is a ubiquitous phenomenon in microwave heating process. When the radius of the heated object is small, the highest temperature occurs somewhere inside the object due to the concentration of the EM wave. While the radius increases to a certain degree, the highest temperature occurs some-where close to the surface due to the skin effect, and the whole high temperature area shows cres-cant-shaped. That is in accordance with basic physical principles, if the radius is kept the same in the heating process, the hotspot position of water does not change, while that of reaction A with several radius values varies. For either water or A, the thermal runaway phenomenon in which small difference of radius results in large difference of highest temperature, occurs easily when the radius is small. On the contrary, it is not evident when the radius is large. Moreover, it is notable that the highest tern-perature in water shows oscillating decreasing trend with the increase of radius, but in reaction A al-most decreases monotonously. Further study should be performed to determine if this difference is only an occasional occurrence.

  12. Microwave Photonics

    OpenAIRE

    Seeds, A.J.; Liu, C. P.; T. Ismail; Fice, M. J.; Pozzi, F; Steed, R. J.; Rouvalis, E.; Renaud, C.C.

    2010-01-01

    Microwave photonics is the use of photonic techniques for the generation, transmission, processing and reception of signals having spectral components at microwave frequencies. This tutorial reviews the technologies used and gives applications examples.

  13. Essential Oils Extracted Using Microwave-Assisted Hydrodistillation from Aerial Parts of Eleven Artemisia Species: Chemical Compositions and Diversities in Different Geographical Regions of Iran

    Directory of Open Access Journals (Sweden)

    Majid Mohammadhosseini

    2017-03-01

    Full Text Available This study aimed to assess the chemical compositions of essential oils (EOs extracted through microwave-assisted hydrodistillation from aerial parts of 11 Artemisia species growing wild in different regions in Northern, Eastern, Western, and Central parts of Iran. The EOs were subsequently analyzed via GC and GC-MS. The percentage yields of the EOs varied over the range of 0.21-0.50 (w/w%. On the basis of these characterizations and spectral assignments, natural compounds including camphor, 1,8-cineole, camphene, α-pinene, β-pinene, β-thujone, and sabinene were the most abundant and frequent constituents among all studied chemical profiles. Accordingly, oxygenated monoterpenes, monoterpene hydrocarbons, and non-terpene hydrocarbons were the dominant groups of natural compounds in the chemical profiles of 13, 4, and 2 samples, respectively. Moreover, five chemotypes were identified using statistical analyses: camphene, α-pinene and β-pinene; 1,8-cineole; camphore and 1,8-cineole; camphore and camphore and β-thujone.

  14. PROGRAMMING THE MICROWAVE-OVEN

    NARCIS (Netherlands)

    KOK, LP; VISSER, PE; BOON, ME

    1994-01-01

    Microwaves can be used to stimulate chemical bonding, diffusion of reagents into and out of the specimen, and coagulation processes in preparatory techniques. Temperature plays an important role in these processes. There are several ways of controlling the temperature of microwave-exposed tissue, fl

  15. PROGRAMMING THE MICROWAVE-OVEN

    NARCIS (Netherlands)

    KOK, LP; VISSER, PE; BOON, ME

    1994-01-01

    Microwaves can be used to stimulate chemical bonding, diffusion of reagents into and out of the specimen, and coagulation processes in preparatory techniques. Temperature plays an important role in these processes. There are several ways of controlling the temperature of microwave-exposed tissue,

  16. Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition

    Science.gov (United States)

    Park, Hamin; Kim, Tae Keun; Cho, Sung Woo; Jang, Hong Seok; Lee, Sang Ick; Choi, Sung-Yool

    2017-01-01

    Hexagonal boron nitride (h-BN) has been previously manufactured using mechanical exfoliation and chemical vapor deposition methods, which make the large-scale synthesis of uniform h-BN very challenging. In this study, we produced highly uniform and scalable h-BN films by plasma-enhanced atomic layer deposition, which were characterized by various techniques including atomic force microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray diffraction. The film composition studied by X-ray photoelectron spectroscopy and Auger electron spectroscopy corresponded to a B:N stoichiometric ratio close to 1:1, and the band-gap value (5.65 eV) obtained by electron energy loss spectroscopy was consistent with the dielectric properties. The h-BN-containing capacitors were characterized by highly uniform properties, a reasonable dielectric constant (3), and low leakage current density, while graphene on h-BN substrates exhibited enhanced electrical performance such as the high carrier mobility and neutral Dirac voltage, which resulted from the low density of charged impurities on the h-BN surface.

  17. Effect of Hydrogen Dilution on Growth of Silicon Nanocrystals Embedded in Silicon Nitride Thin Film bv Plasma-Enhanced CVD

    Institute of Scientific and Technical Information of China (English)

    DING Wenge; ZHEN Lanfang; ZHANG Jiangyong; LI Yachao; YU Wei; FU Guangsheng

    2007-01-01

    An investigation was conducted into the effect of hydrogen dilution on the mi-crostructure and optical properties of silicon nanograins embedded in silicon nitride (Si/SiNx) thin film deposited by the helicon wave plasma-enhanced chemical vapour deposition technique. With Ar-diluted SiH4 and N2 as the reactant gas sources in the fabrication of thin film, the film was formed at a high deposition rate. There was a high density of defect at the amorphous silicon (a-Si)/SiNx interface and a relative low optical gap in the film. An addition of hydrogen into the reactant gas reduced the film deposition rate sharply. The silicon nanograins in the SiNx matrix were in a crystalline state, and the density of defects at the silicon nanocrystals (nc-Si)/SiNx interface decreased significantly and the optical gap of the films widened. These results suggested that hydrogen activated by the plasma could not only eliminate in the defects between the interface of silicon nanograins and SiNx matrix, but also helped the nanograins transform from the amorphous into crystalline state. By changing the hydrogen dilution ratio in the reactant gas sources, a tunable band gap from 1.87 eV to 3.32 eV was obtained in the Si/SiNx film.

  18. Chemically coupled microwave and ultrasonic pre-hydrolysis of pulp and paper mill waste-activated sludge: effect on sludge solubilisation and anaerobic digestion.

    Science.gov (United States)

    Tyagi, Vinay Kumar; Lo, Shang-Lien; Rajpal, Ankur

    2014-05-01

    The effects of alkali-enhanced microwave (MW; 50-175 °C) and ultrasonic (US) (0.75 W/mL, 15-60 min) pretreatments, on solubilisation and subsequent anaerobic digestion efficiency of pulp and paper mill waste-activated sludge, were investigated. Improvements in total chemical oxygen demand and volatile suspended solids (VSS) solubilisation were limited to 33 and 39 % in MW pretreatment only (175 °C). It reached 78 and 66 % in combined MW-alkali pretreatment (pH 12 + 175 °C), respectively. Similarly, chemical oxygen demand and VSS solubilisation were 58 and 37 % in US pretreatment alone (60 min) and it improved by 66 and 49 % after US-alkali pretreatment (pH 12 + 60 min), respectively. The biogas yield for US 60 min-alkali (pH 12)-pretreated sludge was significantly improved by 47 and 20 % over the control and US 60 reactors, respectively. The biogas generation for MW (150 °C)-alkali (pH 12)-pretreated sludge was only 6.3 % higher than control; however, it was 8.3 % lower than the MW (150 °C) reactor, which was due to the inhibition of anaerobic activity under harsh thermal-alkali treatment condition.

  19. Microwave-Assisted Chemical Preparation of ZnO Nanoparticles and Its Application on the Improving Grain Yield, Quantity and Quality of Safflower (Carthamus Tinctorius L.

    Directory of Open Access Journals (Sweden)

    S. Khaghani

    2016-01-01

    Full Text Available ZnO nanoparticles were synthesized by a microwave-assisted chemical method. ZnO nanostructures were synthesized via a fast reaction between zinc acetate and ammonia at presence citric acid and other effective agents in chemical procedure. Nanostructures were characterized by X-ray diffraction , scanning electron microscopy. Seed yield and seed quality of safflower grown under drought stress. The test includes control treatments priming  with distilled water, priming with zinc sulphate in the amount of 300 mg per ml, priming  with sulfate of zinc to 600 mg per liter, priming with Nano priming on the amount of 300 mg per liter, with Nano on priming  rate of 600 mg per liter, priming with zinc sulphate in the amount of 300 mg/l zinc sulphate along with spraying the amount of 300 mg, zinc sulfate with priming  to the amount of 600 mg/l zinc sulphate along with spraying the amount of 600 mg, priming  with Nano over the amount of 300 mg per liter plus the foliar application of nano on the amount of 300 mg, priming  with Nano over the amount of 600 mg per liter plus the foliar application to nano on 600 mg, zinc sulfate to foliar application with the amount of 300 mg per liter, foliar application with Nano over the amount of 300 Mg/l, respectively.

  20. Trace determination of Hg together with As, Sb, Se by miniaturized optical emission spectrometry integrated with chemical vapor generation and capacitively coupled argon microwave miniplasma discharge

    Science.gov (United States)

    Matusiewicz, Henryk; Ślachciński, Mariusz

    2017-07-01

    A miniaturized optical emission spectrometer (OES) with capacitively coupled argon microwave microplasma (μCMP) as and excitation source and chemical vapor generation (CVG) for sample introduction was constructed for the determination of trace Hg, As, Sb and Se. The applied method enabled simultaneous determination of hydride-forming elements (As, Sb, Se) and volatile Hg. Mercury cold vapor and the hydride volatile species of As, Sb and Se were generated when standard or sample solutions were separated from the liquid phase for transport to the capacitively coupled microwave microplasma and detection of their atomic emission. A univariate approach and the simplex optimization procedure were used to achieve optimized conditions and derive analytical figures of merit. The experimental concentration detection limits (LODs) for simultaneous determination, calculated as the concentration giving a signal equal to three times of the standard deviation of the blank (LOD, 3σblank criterion, peak height) were 3.0, 1.4, 1.5 and 3.8 ng mL- 1 for Hg, As, Sb and Se, respectively. The method was validated by the analysis of three Certified Reference Materials (NIST 2711, NRCC DOLT-2, NIST 1643e) of different matrix composition and by the standard addition technique. The method offers relatively good precision (RSD ranged from 5% to 8%) for microsampling (200 μL) analysis. The measured of contents of elements in certified reference materials were in good agreement with the certified values (Hg 1.99-6.25 μg g- 1, As 16.6-105 μg g- 1, Sb 19.4-56.88 μg g- 1, Se 1.52-11.68 μg g- 1), according to the Student t-test, for a confidence level of 95%.

  1. Photoinduced Charge Transfer at Metal Oxide/Oxide Interfaces Prepared with Plasma Enhanced Atomic Layer Deposition

    Science.gov (United States)

    Kaur, Manpuneet

    LiNbO3 and ZnO have shown great potential for photochemical surface reactions and specific photocatalytic processes. However, the efficiency of LiNbO3 is limited due to recombination or back reactions and ZnO exhibits a chemical instability in a liquid cell. In this dissertation, both materials were coated with precise thickness of metal oxide layers to passivate the surfaces and to enhance their photocatalytic efficiency. LiNbO 3 was coated with plasma enhanced atomic layer deposited (PEALD) ZnO and Al2O3, and molecular beam deposited TiO2 and VO2. On the other hand, PEALD ZnO and single crystal ZnO were passivated with PEALD SiO2 and Al2O3. Metal oxide/LiNbO3 heterostructures were immersed in aqueous AgNO3 solutions and illuminated with ultraviolet (UV) light to form Ag nanoparticle patterns. Alternatively, Al2O3 and SiO2/ZnO heterostructures were immersed in K3PO 4 buffer solutions and studied for photoelectrochemical reactions. A fundamental aspect of the heterostructures is the band alignment and band bending, which was deduced from in situ photoemission measurements. This research has provided insight to three aspects of the heterostructures. First, the band alignment at the interface of metal oxides/LiNbO 3, and Al2O3 or SiO2/ZnO were used to explain the possible charge transfer processes and the direction of carrier flow in the heterostructures. Second, the effect of metal oxide coatings on the LiNbO3 with different internal carrier concentrations was related to the surface photochemical reactions. Third is the surface passivation and degradation mechanism of Al2O 3 and SiO2 on ZnO was established. The heterostructures were characterized after stability tests using atomic force microscopy (AFM), scanning electron microscopy (SEM), and cross-section transmission electron microscopy (TEM). The results indicate that limited thicknesses of ZnO or TiO2 on polarity patterned LiNbO3 (PPLN) enhances the Ag+ photoinduced reduction process. ZnO seems more efficient

  2. Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition

    KAUST Repository

    Zhao, Chao

    2013-09-01

    The growth of TiO2 films by plasma enhanced atomic layer deposition using Star-Ti as a precursor has been systematically studied. The conversion from amorphous to crystalline TiO2 was observed either during high temperature growth or annealing process of the films. The refractive index and bandgap of TiO2 films changed with the growth and annealing temperatures. The optimization of the annealing conditions for TiO2 films was also done by morphology and density studies. © 2013 Elsevier B.V. All rights reserved.

  3. A preliminary study on numerical simulation of microwave heating process for chemical reaction and discussion of hotspot and thermal runaway phenomenon

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    The nonlinear process of microwave heating chemical reaction is studied by means of numerical simulation. Especially,the variation of temperature in terms of space and time,as well as the hotspot and thermal runaway phenomena are discussed. Suppose the heated object is a cylinder and the incident electromagnetic(EM) wave is plane wave,the problem turns out to be a coupling calculation of 2D multi-physical fields. The integral equation of EM field is solved using the method of moment(MoM) and the thermal conduction equation is solved using a semi-analysis method. Moreover,a method to determine the equivalent complex permittivity of reactant under the heating is presented in order to perform the calculation. The numerical results for water and a dummy chemical reaction(A) show that the hotspot is a ubiquitous phenomenon in microwave heating process. When the radius of the heated object is small,the highest temperature occurs somewhere inside the object due to the concentration of the EM wave. While the radius increases to a certain degree,the highest temperature occurs somewhere close to the surface due to the skin effect,and the whole high temperature area shows crescent-shaped. That is in accordance with basic physical principles. If the radius is kept the same in the heating process,the hotspot position of water does not change,while that of reaction A with several radius values varies. For either water or A,the thermal runaway phenomenon in which small difference of radius results in large difference of highest temperature,occurs easily when the radius is small. On the contrary,it is not evident when the radius is large. Moreover,it is notable that the highest temperature in water shows oscillating decreasing trend with the increase of radius,but in reaction A almost decreases monotonously. Further study should be performed to determine if this difference is only an occasional occurrence.

  4. The Structure and Molecular Parameters of Camphene Determined by Fourier Transform Microwave Spectroscopy and Quantum Chemical Calculations

    Science.gov (United States)

    Neeman, Elias M.; Dréan, Pascal; Huet, T. R.

    2016-06-01

    The emission of volatile organic compounds, from plants has strong revelance for plant physiology, plant ecology and atmospheric chemistry. Camphene (C10H16) is a bicyclic monoterpene which is emitted in the atmosphere by biogenic sources. The structure of the unique stable conformer was optimized using density functional theory and ab initio calculations. The rotational spectrum of camphene was recorded in a supersonic jet expansion with a Fourier transform microwave spectrometer over the range 2-20 GHz. Signals from the parent species and from the ten 13C isotopomers were observed in natural abundance. The rotational and centrifugal distortion parameters were fitted to a Watson's Hamiltonian in the A-reduction. A magnetic hyperfine structure associated with the pairs of hydrogen nuclei in the methylene groups was observed and modeled.The rotational constants coupled to the equilibrium structure calculations were used to determine the r_0 and the r_m(1) gas-phase geometries of the carbon skeleton. The present work provides the first spectroscopic characterization of camphene in the gas phase and these results are also relevant for ozonolysis kinetics study through Criegee intermediates. R. Baraldi, F. Rapparini, O. Facini, D. Spano and P. Duce, Journal of Mediterranean Ecology, Vol.6, No.1, (2005). A. Bracho-Nunez, N. M. Knothe, S. Welter, M. Staudt, W. R. Costa, M. A. R. Liberato, M. T. F. Piedade, and J. Kesselmeier Biogeosciences, 10, 5855-5873, (2013). Minna Kivimäenpää, Narantsetseg Magsarjav, Rajendra Ghimire, Juha-Matti Markkanen, Juha Heijari, Martti Vuorinen and Jarmo K. Holopainen, Atmospheric Environment, 60, 477-485, (2012). R.C. de M. Oliveira and G. F. Bauerfeldt, J. Phys. Chem. A, 119 2802-2812 (2015)

  5. Microwave Microscope

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Makes ultra-high-resolution field measurements. The Microwave Microscope (MWM) has been used in support of several NRL experimental programs involving sea...

  6. Application of Microwave Irradiation to Rapid Organic Inclusion Complex

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    @@ Microwave irradiation has been used in chemical laboratories for moisture analysis and wet asking procedures of biological and geological materials for a number of years [1]. More recently the microwave irradiation also widely used for rapid organic synthesis [2]. However, there have not yet been any reports concerning the ultilisatioin of microwave ovens in the routine organic inclusion complex regularly in chemical research.

  7. Automated radioanalytical system incorporating microwave-assisted sample preparation, chemical separation, and online radiometric detection for the monitoring of total 99Tc in nuclear waste processing streams.

    Science.gov (United States)

    Egorov, Oleg B; O'Hara, Matthew J; Grate, Jay W

    2012-04-03

    An automated fluidic instrument is described that rapidly determines the total (99)Tc content of aged nuclear waste samples, where the matrix is chemically and radiologically complex and the existing speciation of the (99)Tc is variable. The monitor links microwave-assisted sample preparation with an automated anion exchange column separation and detection using a flow-through solid scintillator detector. The sample preparation steps acidify the sample, decompose organics, and convert all Tc species to the pertechnetate anion. The column-based anion exchange procedure separates the pertechnetate from the complex sample matrix, so that radiometric detection can provide accurate measurement of (99)Tc. We developed a preprogrammed spike addition procedure to automatically determine matrix-matched calibration. The overall measurement efficiency that is determined simultaneously provides a self-diagnostic parameter for the radiochemical separation and overall instrument function. Continuous, automated operation was demonstrated over the course of 54 h, which resulted in the analysis of 215 samples plus 54 hly spike-addition samples, with consistent overall measurement efficiency for the operation of the monitor. A sample can be processed and measured automatically in just 12.5 min with a detection limit of 23.5 Bq/mL of (99)Tc in low activity waste (0.495 mL sample volume), with better than 10% RSD precision at concentrations above the quantification limit. This rapid automated analysis method was developed to support nuclear waste processing operations planned for the Hanford nuclear site.

  8. Effects of Surface Modification of Nanodiamond Particles for Nucleation Enhancement during Its Film Growth by Microwave Plasma Jet Chemical Vapour Deposition Technique

    Directory of Open Access Journals (Sweden)

    Chii-Ruey Lin

    2014-01-01

    Full Text Available The seedings of the substrate with a suspension of nanodiamond particles (NDPs were widely used as nucleation seeds to enhance the growth of nanostructured diamond films. The formation of agglomerates in the suspension of NDPs, however, may have adverse impact on the initial growth period. Therefore, this paper was aimed at the surface modification of the NDPs to enhance the diamond nucleation for the growth of nanocrystalline diamond films which could be used in photovoltaic applications. Hydrogen plasma, thermal, and surfactant treatment techniques were employed to improve the dispersion characteristics of detonation nanodiamond particles in aqueous media. The seeding of silicon substrate was then carried out with an optimized spin-coating method. The results of both Fourier transform infrared spectroscopy and dynamic light scattering measurements demonstrated that plasma treated diamond nanoparticles possessed polar surface functional groups and attained high dispersion in methanol. The nanocrystalline diamond films deposited by microwave plasma jet chemical vapour deposition exhibited extremely fine grain and high smooth surfaces (~6.4 nm rms on the whole film. These results indeed open up a prospect of nanocrystalline diamond films in solar cell applications.

  9. Growth of graphene on Cu foils by microwave plasma chemical vapor deposition: The effect of in-situ hydrogen plasma post-treatment

    Science.gov (United States)

    Fang, Liping; Yuan, Wen; Wang, Bing; Xiong, Ying

    2016-10-01

    Microwave plasma chemical vapor deposition (MPCVD) is a promising method for the large-scale production of high-quality graphene. The aim of this work is to investigate the effect of in-situ hydrogen plasma post-treatment on the MPCVD-grown graphene films. By simply varying the duration time of in-situ hydrogen plasma, surface morphology, number of layers and defect density of as-grown graphene films can be manipulated. The role of hydrogen plasma can be proposed from our observations, promoting to further grow graphene films in the early stage and consequently acting as an etching agent to thin graphene films in the later stage. On the basis of above mechanism, monolayer graphene films with low defect density and smooth surface can be grown by adjusting the times of the growing step and the plasma post-treatment step. This additional in-situ hydrogen plasma post-treatment may be significant for growing well-defined graphene films with controllable defects and number of layers.

  10. Study of the Morphological, Structural, Optical and Photoelectrochemical Properties of Zinc Oxide Nanorods Grown Using a Microwave Chemical Bath Deposition Method

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Sungjin; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2017-04-15

    In this study, zinc oxide (ZnO) nanostructures were grown on a ZnO-buffered fluorine-doped tin oxide (FTO) substrate using a microwave chemical bath deposition method with different zinc oxide precursor concentrations from 0.01 to 0.5 M. We investigated the effects of the zinc oxide precursor concentration on the morphological, structural, optical and photoelectrochemical properties of the ZnO nanostructures. From this work, we found that ZnO one-dimensional structures mainly grew along the (002) plane, and the nanorod length, diameter, surface area and photoelectrochemical properties were largely dependent on the precursor concentration. That is, the photoelectrochemical properties were affected by the morphological and structural properties of the ZnO. The morphological, structural, optical and photoelectrochemical properties of the ZnO nanostructure were investigated by field emission scanning electron microscopy (FE-SEM) and atomic force microscope (AFM), X-ray diffraction (XRD), UV-visible spectroscopy and 3-electrode potentiostat. We obtained the highest photocurrent density of 0.37 mA/cm{sup 2} (at 1.1 V vs. SCE) from the precursor concentration of 0.07 M, which resulted in ZnO nanostructures with proper length and diameter, large surface area and good structural properties.

  11. Fabrication of metallic single electron transistors featuring plasma enhanced atomic layer deposition of tunnel barriers

    Science.gov (United States)

    Karbasian, Golnaz

    The continuing increase of the device density in integrated circuits (ICs) gives rise to the high level of power that is dissipated per unit area and consequently a high temperature in the circuits. Since temperature affects the performance and reliability of the circuits, minimization of the energy consumption in logic devices is now the center of attention. According to the International Technology Roadmaps for Semiconductors (ITRS), single electron transistors (SETs) hold the promise of achieving the lowest power of any known logic device, as low as 1x10-18 J per switching event. Moreover, SETs are the most sensitive electrometers to date, and are capable of detecting a fraction of an electron charge. Despite their low power consumption and high sensitivity for charge detection, room temperature operation of these devices is quite challenging mainly due to lithographical constraints in fabricating structures with the required dimensions of less than 10 nm. Silicon based SETs have been reported to operate at room temperature. However, they all suffer from significant variation in batch-to-batch performance, low fabrication yield, and temperature-dependent tunnel barrier height. In this project, we explored the fabrication of SETs featuring metal-insulator-metal (MIM) tunnel junctions. While Si-based SETs suffer from undesirable effect of dopants that result in irregularities in the device behavior, in metal-based SETs the device components (tunnel barrier, island, and the leads) are well-defined. Therefore, metal SETs are potentially more predictable in behavior, making them easier to incorporate into circuits, and easier to check against theoretical models. Here, the proposed fabrication method takes advantage of unique properties of chemical mechanical polishing (CMP) and plasma enhanced atomic layer deposition (PEALD). Chemical mechanical polishing provides a path for tuning the dimensions of the tunnel junctions, surpassing the limits imposed by electron beam

  12. Chemical modulators of heat shock protein 70 (Hsp70) by sequential, microwave-accelerated reactions on solid phase.

    Science.gov (United States)

    Wisén, Susanne; Androsavich, John; Evans, Christopher G; Chang, Lyra; Gestwicki, Jason E

    2008-01-01

    Molecular chaperones, such as Hsp70 and Hsp90, are responsible for a variety of protective, anti-apoptotic functions. While inhibitors of Hsp90, such as geldanamycin and its derivative 17-AAG, are well known and important anti-cancer leads, Hsp70 has received less attention. Interesting lead candidates for Hsp70 share a dihydropyrimidine core; however, the preferred display of pendant functionality is still not clear. Here, we take advantage of the versatility of peptides to explore the requirements for activity. An exploratory compound collection was assembled by performing a Biginelli cyclocondensation at the terminus of a resin-bound beta-peptide. Liberation from solid support yielded peptide-modified dihydropyrimidines and, within this series, we uncovered compounds that alter the ATPase activity of Hsp70 and its bacterial ortholog, DnaK. Moreover, we identified important contributions made by aromatic, hydrophobic groups. These chemical probes could be used to study the roles of this molecular chaperone in disease.

  13. Silicon dioxide mask by plasma enhanced atomic layer deposition in focused ion beam lithography

    Science.gov (United States)

    Liu, Zhengjun; Shah, Ali; Alasaarela, Tapani; Chekurov, Nikolai; Savin, Hele; Tittonen, Ilkka

    2017-02-01

    In this work, focused ion beam (FIB) lithography was developed for plasma enhanced atomic layer deposited (PEALD) silicon dioxide SiO2 hard mask. The PEALD process greatly decreases the deposition temperature of the SiO2 hard mask. FIB Ga+ ion implantation on the deposited SiO2 layer increases the wet etch resistivity of the irradiated region. A programmed exposure in FIB followed by development in a wet etchant enables the precisely defined nanoscale patterning. The combination of FIB exposure parameters and the development time provides greater freedom for optimization. The developed process provides high pattern dimension accuracy over the tested range of 90–210 nm. Utilizing the SiO2 mask developed in this work, silicon nanopillars with 40 nm diameter were successfully fabricated with cryogenic deep reactive ion etching and the aspect ratio reached 16:1. The fabricated mask is suitable for sub-100 nm high aspect ratio silicon structure fabrication.

  14. TiN coating on wall of holes and stitches by pulsed DC plasma enhanced CVD

    Institute of Scientific and Technical Information of China (English)

    马胜利; 徐可为; 介万奇

    2003-01-01

    TiN coating samples with narrow-stitch or deep-hole of different sizes and real dies with complex shape were processed by a larger-scale pulsed plasma enhanced CVD(PECVD) reactor. Scanning electron microscopy, optical microscopy, Vicker's hardness and interfacial adhesion tests were conducted to find the relation between the microstructure and properties of TiN coating on a flat and an inner surface. The results indicate that the inner-wall of holes (d>2 mm) and inner surface of narrow-stitches (d>3 mm) can be coated with the aid of pulsed DC plasma in an industrial-scale reactor. The quality of coatings on different surfaces is almost the same. The coating was applied to aluminum extrusion mould, and the mould life was increased at least by one time.

  15. Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition

    Science.gov (United States)

    Jhang, Pei-Ci; Lu, Chi-Pin; Shieh, Jung-Yu; Yang, Ling-Wu; Yang, Tahone; Chen, Kuang-Chao; Lu, Chih-Yuan

    2017-07-01

    An N-rich silicon nitride film, with a lower refractive index (RI) than the stoichiometric silicon nitride (RI = 2.01), was deposited by alternating the exposure of dichlorosilane (DCS, SiH2Cl2) and that of ammonia (NH3) in a plasma-enhanced atomic layer deposition (PEALD) process. In this process, the plasma ammonia was easily decomposed to reactive radicals by RF power activating so that the N-rich silicon nitride was easily formed by excited ammonia radicals. The growth kinetics of N-rich silicon nitride were examined at various deposition temperatures ranging from 400 °C to 630 °C; the activation energy (Ea) decreased as the deposition temperature decreased below 550 °C. N-rich silicon nitride film with a wide range of values of refractive index (RI) (RI = 1.86-2.00) was obtained by regulating the deposition temperature. At the optimal deposition temperature, the effects of RF power, NH3 flow rate and NH3 flow time were on the characteristics of the N-rich silicon nitride film were evaluated. The results thus reveal that the properties of the N-rich silicon nitride film that was formed by under plasma-enhanced atomic layer deposition (PEALD) are dominated by deposition temperature. In charge trap flash (CTF) study, an N-rich silicon nitride film was applied to MAONOS device as a charge-trapping layer. The films exhibit excellent electron trapping ability and favor a fresh cell data retention performance as the deposition temperature decreased.

  16. Microwave Measurements

    CERN Document Server

    Skinner, A D

    2007-01-01

    The IET has organised training courses on microwave measurements since 1983, at which experts have lectured on modern developments. Their lecture notes were first published in book form in 1985 and then again in 1989, and they have proved popular for many years with a readership beyond those who attended the courses. The purpose of this third edition of the lecture notes is to bring the latest techniques in microwave measurements to this wider audience. The book begins with a survey of the theory of current microwave circuits and continues with a description of the techniques for the measureme

  17. Microwave photonics

    CERN Document Server

    Lee, Chi H

    2006-01-01

    Wireless, optical, and electronic networks continue to converge, prompting heavy research into the interface between microwave electronics, ultrafast optics, and photonic technologies. New developments arrive nearly as fast as the photons under investigation, and their commercial impact depends on the ability to stay abreast of new findings, techniques, and technologies. Presenting a broad yet in-depth survey, Microwave Photonics examines the major advances that are affecting new applications in this rapidly expanding field.This book reviews important achievements made in microwave photonics o

  18. Microwave Ferrites for Cryogenic Applications

    OpenAIRE

    G. Dionne

    1997-01-01

    Recent advances in microwave ferrite device technology have seen the introduction of superconductivity that virtually eliminates insertion losses due to electrical conduction in microstrip circuits. The conventional ferrimagnetic spinel and garnet compositions, however, are not generally optimized for temperatures in the vicinity of 77 K and may require chemical redesign in order to realize the full potential of these devices. For microwave transmission, absorption losses may be reduced by a ...

  19. Gas-Phase Molecular Structure of Nopinone and its Water Complexes Studied by Microwave Fourier Transform Spectroscopy and Quantum Chemical Calculations

    Science.gov (United States)

    Neeman, Elias M.; Aviles Moreno, Juan-Ramon; Huet, T. R.

    2016-06-01

    Several monoterpenes and terpenoids are biogenic volatile organic compounds which are emitted in the atmosphere, where they react with OH, O_3 and NO_x etc. to give rise to several oxidation and degradation products. Their decomposition products are a major source of secondray organic aerosol (SOA). Spectroscopic information on these atmospheric species is still very scarce. The rotational spectrum of nopinone (C_9H14O) one of the major oxidation products of β-pinene, and of its water complexes were recorded in a supersonic jet expansion with a Fourier transform microwave spectrometer over the range 2-20 GHz. The structure of the unique stable conformer of the nopinone was optimized using density functional theory and ab initio calculations. Signals from the parent species and from the 13C and 18O isotopomers were observed in natural abundance. A magnetic hyperfine structure associated with the pairs of hydrogen nuclei in the methylene groups was observed and modeled. The structures of several conformers of the nopinone-water complexes with up to three molecules of water were optimized using density functional theory and ab initio calculations. The energetically most stable of calculated conformers were observed and anlyzed. The rotational and centrifugal distortion parameters were fitted to a Watson's Hamiltonian in the A-reduction. The present work provides the first spectroscopic characterization of nopinone and its water complexes in the gas phase. A. Calogirou, B.R. Larsen, and D. Kotzias, Atmospheric Environment, 33, 1423-1439, (1999) P. Paasonen et al., Nat. Geosci., 6, 438-442 (2013) D. Zhang and R. Zhang The Journal of Chemical Physics, 122, 114308, (2005) R. Winterhalter et al. Journal of Atmospheric Chemistry, 35, 165-197, (2000)

  20. Microwave generator

    Science.gov (United States)

    Kwan, T.J.T.; Snell, C.M.

    1987-03-31

    A microwave generator is provided for generating microwaves substantially from virtual cathode oscillation. Electrons are emitted from a cathode and accelerated to an anode which is spaced apart from the cathode. The anode has an annular slit there through effective to form the virtual cathode. The anode is at least one range thickness relative to electrons reflecting from the virtual cathode. A magnet is provided to produce an optimum magnetic field having the field strength effective to form an annular beam from the emitted electrons in substantial alignment with the annular anode slit. The magnetic field, however, does permit the reflected electrons to axially diverge from the annular beam. The reflected electrons are absorbed by the anode in returning to the real cathode, such that substantially no reflexing electrons occur. The resulting microwaves are produced with a single dominant mode and are substantially monochromatic relative to conventional virtual cathode microwave generators. 6 figs.

  1. Microwave photonics

    CERN Document Server

    Lee, Chi H

    2013-01-01

    Microwave photonics continues to see rapid growth. The integration of optical fiber and wireless networks has become a commercial reality and is becoming increasingly pervasive. Such hybrid technology will lead to many innovative applications, including backhaul solutions for mobile networks and ultrabroadband wireless networks that can provide users with very high bandwidth services. Microwave Photonics, Second Edition systematically introduces important technologies and applications in this emerging field. It also reviews recent advances in micro- and millimeter-wavelength and terahertz-freq

  2. Microwave-assisted synthesis of photochromic fulgides

    Indian Academy of Sciences (India)

    Sivasankaran Nithyanandan; Chinnusamy Saravanan; Sengodan Senthil; Palaninathan Kannan

    2010-03-01

    The oxazole and indole based heterocyclic photochromic fulgides were synthesized from their corresponding fulgenic acid derivatives by clay catalysed microwave irradiation methodology. Improved yields of fulgides were observed by the microwave irradiation method as compared other chemical methods employed so far. The proportions of clay (montmorillonite KSF) and isopropenyl acetate play a key role in increasing the yields of fulgides.

  3. Use of plasma enhanced ALD to construct efficient interference filters for astronomy in the FUV

    Science.gov (United States)

    Scowen, Paul A.; Nemanich, Robert; Eller, Brianna; Yu, Hongbin; Mooney, Tom; Beasley, Matt

    2016-07-01

    Over the past few years the advent of atomic layer deposition (ALD) technology has opened new capabilities to the field of coatings deposition for use in optical elements. At the same time, there have been major advances in both optical designs and detector technologies that can provide orders of magnitude improvement in throughput in the far ultraviolet (FUV) and near ultraviolet (NUV) passbands. Recent review work has shown that a veritable revolution is about to happen in astronomical diagnostic work for targets ranging from protostellar and protoplanetary systems, to the intergalactic medium that feeds gas supplies for galactic star formation, and supernovae and hot gas from star forming regions that determine galaxy formation feedback. These diagnostics are rooted in access to a forest of emission and absorption lines in the ultraviolet (UV)[1], and all that prevents this advance is the lack of throughput in such systems, even in space-based conditions. We outline an approach to use a range of materials to implement stable optical layers suitable for protective overcoats with high UV reflectivity and unprecedented uniformity, and use that capability to leverage innovative ultraviolet/optical filter construction to enable astronomical science. These materials will be deposited in a multilayer format over a metal base to produce a stable construct. Specifically, we will employ the use of PEALD (plasma-enhanced atomic layer deposition) methods for the deposition and construction of reflective layers that can be used to construct unprecedented filter designs for use in the ultraviolet.

  4. Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study

    Energy Technology Data Exchange (ETDEWEB)

    Sowińska, Małgorzata, E-mail: malgorzata.sowinska@b-tu.de; Henkel, Karsten; Schmeißer, Dieter [Brandenburg University of Technology Cottbus-Senftenberg, Applied Physics and Sensors, K.-Wachsmann-Allee 17, 03046 Cottbus (Germany); Kärkkänen, Irina; Schneidewind, Jessica; Naumann, Franziska; Gruska, Bernd; Gargouri, Hassan [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)

    2016-01-15

    The process parameters' impact of the plasma-enhanced atomic layer deposition (PE-ALD) method on the oxygen to nitrogen (O/N) ratio in titanium oxynitride (TiO{sub x}N{sub y}) films was studied. Titanium(IV)isopropoxide in combination with NH{sub 3} plasma and tetrakis(dimethylamino)titanium by applying N{sub 2} plasma processes were investigated. Samples were characterized by the in situ spectroscopic ellipsometry, x-ray photoelectron spectroscopy, and electrical characterization (current–voltage: I-V and capacitance–voltage: C-V) methods. The O/N ratio in the TiO{sub x}N{sub y} films is found to be very sensitive for their electric properties such as conductivity, dielectric breakdown, and permittivity. Our results indicate that these PE-ALD film properties can be tuned, via the O/N ratio, by the selection of the process parameters and precursor/coreactant combination.

  5. RF plasma enhanced MOCVD of yttria stabilized zirconia thin films using octanedionate precursors and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Chopade, S.S. [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai 400085 (India); Nayak, C.; Bhattacharyya, D.; Jha, S.N.; Tokas, R.B.; Sahoo, N.K. [Atomic & Molecular Physics Division, Bhabha Atomic Research Center, Trombay, Mumbai 400085 (India); Deo, M.N. [High Pressure & Synchrotron Radiation Physics Division, Bhabha Atomic Research Center, Trombay, Mumbai 400085 (India); Biswas, A. [Atomic & Molecular Physics Division, Bhabha Atomic Research Center, Trombay, Mumbai 400085 (India); Rai, Sanjay [Indus Synchrotron Utilization Division, RRCAT, Indore 452013 (India); Thulasi Raman, K.H.; Rao, G.M. [Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012 (India); Kumar, Niranjan [Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Patil, D.S., E-mail: dspatil@iitb.ac.in [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai 400085 (India)

    2015-11-15

    Highlights: • YSZ films are deposited by RF plasma MOCVD using Zr(tod){sub 4} and Y(tod){sub 3} precursors. • Films are deposited under the influence of RF self-bias on the substrates. • Films are characterized by different techniques. • Films properties are dependent on yttria content and film structure. - Abstract: Yttria stabilized zirconia thin films have been deposited by RF plasma enhanced MOCVD technique on silicon substrates at substrate temperature of 400 °C. Plasma of precursor vapors of (2,7,7-trimethyl-3,5-octanedionate) yttrium (known as Y(tod){sub 3}), (2,7,7-trimethyl-3,5-octanedionate) zirconium (known as Zr(tod){sub 4}), oxygen and argon gases is used for deposition. To the best of our knowledge, plasma assisted MOCVD of YSZ films using octanediaonate precursors have not been reported in the literature so far. The deposited films have been characterized by GIXRD, FTIR, XPS, FESEM, AFM, XANES, EXAFS, EDAX and spectroscopic ellipsometry. Thickness of the films has been measured by stylus profilometer while tribological property measurement has been done to study mechanical behavior of the coatings. Characterization by different techniques indicates that properties of the films are dependent on the yttria content as well as on the structure of the films.

  6. Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS

    Directory of Open Access Journals (Sweden)

    Stephan Ratzsch

    2015-11-01

    Full Text Available In this study, the influence of direct current (DC biasing on the growth of titanium dioxide (TiO2 layers and their nucleation behavior has been investigated. Titania films were prepared by plasma enhanced atomic layer deposition (PEALD using Ti(OiPr4 as metal organic precursor. Oxygen plasma, provided by remote inductively coupled plasma, was used as an oxygen source. The TiO2 films were deposited with and without DC biasing. A strong dependence of the applied voltage on the formation of crystallites in the TiO2 layer is shown. These crystallites form spherical hillocks on the surface which causes high surface roughness. By applying a higher voltage than the plasma potential no hillock appears on the surface. Based on these results, it seems likely, that ions are responsible for the nucleation and hillock growth. Hence, the hillock formation can be controlled by controlling the ion energy and ion flux. The growth per cycle remains unchanged, whereas the refractive index slightly decreases in the absence of energetic oxygen ions.

  7. Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor.

    Science.gov (United States)

    Park, Jae-Min; Jang, Se Jin; Yusup, Luchana L; Lee, Won-Jun; Lee, Sang-Ick

    2016-08-17

    We report the plasma-enhanced atomic layer deposition (PEALD) of silicon nitride thin film using a silylamine compound as the silicon precursor. A series of silylamine compounds were designed by replacing SiH3 groups in trisilylamine by dimethylaminomethylsilyl or trimethylsilyl groups to obtain sufficient thermal stability. The silylamine compounds were synthesized through redistribution, amino-substitution, lithiation, and silylation reactions. Among them, bis(dimethylaminomethylsilyl)trimethylsilyl amine (C9H29N3Si3, DTDN2-H2) was selected as the silicon precursor because of the lowest bond dissociation energy and sufficient vapor pressures. The energies for adsorption and reaction of DTDN2-H2 with the silicon nitride surface were also calculated by density functional theory. PEALD silicon nitride thin films were prepared using DTDN2-H2 and N2 plasma. The PEALD process window was between 250 and 400 °C with a growth rate of 0.36 Å/cycle. The best film quality was obtained at 400 °C with a RF power of 100 W. The PEALD film prepared showed good bottom and sidewall coverages of ∼80% and ∼73%, respectively, on a trench-patterned wafer with an aspect ratio of 5.5.

  8. The physical properties of cubic plasma-enhanced atomic layer deposition TaN films

    Science.gov (United States)

    Kim, H.; Lavoie, C.; Copel, M.; Narayanan, V.; Park, D.-G.; Rossnagel, S. M.

    2004-05-01

    Plasma-enhanced atomic layer deposition (PE-ALD) is a promising technique to produce high quality metal and nitride thin films at low growth temperature. In this study, very thin (<10 nm) low resistivity (350 μΩ cm) cubic TaN Cu diffusion barrier were deposited by PE-ALD from TaCl5 and a plasma of both hydrogen and nitrogen. The physical properties of TaN thin films including microstructure, conformality, roughness, and thermal stability were investigated by various analytical techniques including x-ray diffraction, medium energy ion scattering, and transmission electron microscopy. The Cu diffusion barrier properties of PE-ALD TaN thin films were studied using synchrotron x-ray diffraction, optical scattering, and sheet resistance measurements during thermal annealing of the test structures. The barrier failure temperatures were obtained as a function of film thickness and compared with those of PE-ALD Ta, physical vapor deposition (PVD) Ta, and PVD TaN. A diffusion kinetics analysis showed that the microstructure of the barrier materials is one of the most critical factors for Cu diffusion barrier performance.

  9. Nanocrystalline diamond thin films on titanium-6 aluminum-4 vanadium alloy temporomandibular joint prosthesis simulants by microwave plasma chemical vapor deposition

    Science.gov (United States)

    Fries, Marc Douglas

    A course of research has been performed to assess the suitability of nanocrystal-line diamond (NCD) films on Ti-6Al-4V alloy as wear-resistant coatings in biomedical implant use. A series of temporomandibular (TMJ) joint condyle simulants were polished and acid-passivated as per ASTM F86 standard for surface preparation of implants. A 3-mum-thick coating of NCD film was deposited by microwave plasma chemical vapor deposition (MPCVD) over the hemispherical articulation surfaces of the simulants. Plasma chemistry conditions were measured and monitored by optical emission spectroscopy (OES), using hydrogen as a relative standard. The films consist of diamond grains around 20 nm in diameter embedded in an amorphous carbon matrix, free of any detectable film stress gradient. Hardness averages 65 GPa and modulus measures 600 GPa at a depth of 250 nm into the film surface. A diffuse film/substrate boundary produces a minimal film adhesion toughness (GammaC) of 158 J/m2. The mean RMS roughness is 14.6 +/- 4.2 nm, with an average peak roughness of 82.6 +/- 65.9 nm. Examination of the surface morphology reveals a porous, dendritic surface. Wear testing resulted in two failed condylar coatings out of three tests. No macroscopic delamination was found on any sample, but micron-scale film pieces broke away, exposing the substrate. Electrochemical corrosion testing shows a seven-fold reduction in corrosion rate with the application of an NCD coating as opposed to polished, passivated Ti-6Al-4V, producing a corrosion rate comparable to wrought Co-Cr-Mo. In vivo biocompatibility testing indicates that implanted NCD films did not elicit an immune response in the rabbit model, and osteointegration was apparent for both compact and trabecular bone on both NCD film and bare Ti-6Al-4V. Overall, NCD thin film material is reasonably smooth, biocompatible, and very well adhered. Wear testing indicates that this material is unacceptable for use in demanding TMJ applications without

  10. Medical preparation container comprising microwave powered sensor assembly

    DEFF Research Database (Denmark)

    2016-01-01

    The present invention relates to a medical preparation container which comprises a microwave powered sensor assembly. The microwave powered sensor assembly comprises a sensor configured to measure a physical property or chemical property of a medical preparation during its heating in a microwave...

  11. Study on Contribution of Microwave to Changes of Chemical Composition in Extraction of Essential Oils%微波提取对挥发油化学成分的影响

    Institute of Scientific and Technical Information of China (English)

    邹小兵; 陶进转; 夏之宁; 喻彦林; 黄锐; 孔娜

    2011-01-01

    采用无溶剂微波辅助提取与微波水蒸气蒸馏法提取薄荷叶和花椒挥发油,气相色谱-质谱(GC-MS)分析挥发油化学成分,与传统的水蒸气蒸馏对比,考察了微波对挥发油化学成分的影响.结果表明,微波促使薄荷叶挥发油中的薄荷醇氧化,转变为长叶薄荷酮和少量的薄荷呋喃酮.花椒挥发油中的按油素等化合物受质子的催化,在长时间温度较高的提取条件下重排转变为α~-里哪醇.微波提取时间大于50~70min,对该重排有促进作用;微波提取时间小于50min,该重排反应几乎不发生.无溶剂微波辅助提取由于提取速率快、提取时间短(40min),在一定程度上避免了该重排反应,得到较多的桉油素,而水蒸气蒸馏得到较多的重排产物α~-里哪醇,微波水蒸气蒸馏介于二者之间.%Essential oil from mentha hapioealyx briq and zanthoxylum bungeanum maxim was extracted by solvent free microwave extraction(SFME) and microwave assisted hydro-distillation(MAHD), and GC/MS was used for the qualitation and quantification analysis for the chemical composition in the essential oils. Hydro-distillation(HD) was compared to study the contribution of microwave to the composition changes in the extraction process. The experimental results showed that microwave can promote the menthol from the essential oil of mentha hapioealyx briq oxidized into pulegone and slight mint furanone. The eucalyptol from the essential oil of zanthoxylum bungeanum maxim would be transformed to α-linalool through arrangement reaction catalysis by proton in high temperature environment for a lo ng time. When the microwave action time was exceeded 50- 70 min, above arrangement reaction would be promoted. When action time of microwave was less than 50 min, above arrangement reaction almost did not be observed. Microwave can speed up the extraction, especially for SFME. By microwave method, the extraction time is so short(40 min) that above

  12. Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride

    Science.gov (United States)

    Yang, Jialing; Eller, Brianna S.; Zhu, Chiyu; England, Chris; Nemanich, Robert J.

    2012-09-01

    Al2O3 films, HfO2 films, and HfO2/Al2O3 stacked structures were deposited on n-type, Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers were first treated with a wet-chemical clean to remove organics and an in-situ combined H2/N2 plasma at 650 °C to remove residual carbon contamination, resulting in a clean, oxygen-terminated surface. This cleaning process produced slightly upward band bending of 0.1 eV. Additional 650 °C annealing after plasma cleaning increased the upward band bending by 0.2 eV. After the initial clean, high-k oxide films were deposited using oxygen PEALD at 140 °C. The valence band and conduction band offsets (VBOs and CBOs) of the Al2O3/GaN and HfO2/GaN structures were deduced from in-situ x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). The valence band offsets were determined to be 1.8 and 1.4 eV, while the deduced conduction band offsets were 1.3 and 1.0 eV, respectively. These values are compared with the theoretical calculations based on the electron affinity model and charge neutrality level model. Moreover, subsequent annealing had little effect on these offsets; however, the GaN band bending did change depending on the annealing and processing. An Al2O3 layer was investigated as an interfacial passivation layer (IPL), which, as results suggest, may lead to improved stability, performance, and reliability of HfO2/IPL/GaN structures. The VBOs were ˜0.1 and 1.3 eV, while the deduced CBOs were 0.6 and 1.1 eV for HfO2 with respect to Al2O3 and GaN, respectively.

  13. Fast Drying of Agriculture Commodities by Using Microwave

    Science.gov (United States)

    Ode Ngkoimani, La; Megawati; Purwana Saputra, Gde; Cahyono, Edi; Aripin, Haji; Gde Suastika, Komang; Nyoman Sudiana, I.

    2017-05-01

    Some progress has been made and reported previously due to investigate microwave effects to materials. The microwave applications for material processing by using wide range microwave frequencies such as in sintering, chemical reaction, and drying have been performed. Microwave drying is based on a unique volumetric heating mode with electromagnetic radiation at 2,450 MHz. However, the quest for a what a true microwave effect is still plagued with difficulties. This paper provides a experimental and theoretical analysis of drying materials using microwave. For drying experiments, in this investigation, we were using a domestic microwave oven which operated at three power levels for drying chamber. The samples are agriculture commodity collected from local farmers. The experimental results show that microwave accelerate drying in most materials. The experimental data were analyzed by using an available model constructed from fundamental physics by other scholars. The model has been applied to more understanding the behavior of the microwave drying material.

  14. Plasma-enhanced gasification of low-grade coals for compact power plants

    Science.gov (United States)

    Uhm, Han S.; Hong, Yong C.; Shin, Dong H.; Lee, Bong J.

    2011-10-01

    A high temperature of a steam torch ensures an efficient gasification of low-grade coals, which is comparable to that of high-grade coals. Therefore, the coal gasification system energized by microwaves can serve as a moderately sized power plant due to its compact and lightweight design. This plasma power plant of low-grade coals would be useful in rural or sparsely populated areas without access to a national power grid.

  15. CHEMICALS

    CERN Document Server

    Medical Service

    2002-01-01

    It is reminded that all persons who use chemicals must inform CERN's Chemistry Service (TIS-GS-GC) and the CERN Medical Service (TIS-ME). Information concerning their toxicity or other hazards as well as the necessary individual and collective protection measures will be provided by these two services. Users must be in possession of a material safety data sheet (MSDS) for each chemical used. These can be obtained by one of several means : the manufacturer of the chemical (legally obliged to supply an MSDS for each chemical delivered) ; CERN's Chemistry Service of the General Safety Group of TIS ; for chemicals and gases available in the CERN Stores the MSDS has been made available via EDH either in pdf format or else via a link to the supplier's web site. Training courses in chemical safety are available for registration via HR-TD. CERN Medical Service : TIS-ME :73186 or service.medical@cern.ch Chemistry Service : TIS-GS-GC : 78546

  16. Double-plasma enhanced carbon shield for spatial/interfacial controlled electrodes in lithium ion batteries via micro-sized silicon from wafer waste

    Science.gov (United States)

    Chen, Bing-Hong; Chuang, Shang-I.; Duh, Jenq-Gong

    2016-11-01

    Using spatial and interfacial control, the micro-sized silicon waste from wafer slurry could greatly increase its retention potential as a green resource for silicon-based anode in lithium ion batteries. Through step by step spatial and interfacial control for electrode, the cyclability of recycled waste gains potential performance from its original poor retention property. In the stages of spatial control, the electrode stabilizers of active, inactive and conductive additives were mixed into slurries for maintaining architecture and conductivity of electrode. In addition, a fusion electrode modification of interfacial control combines electrolyte additive, technique of double-plasma enhanced carbon shield (D-PECS) to convert the chemical bond states and to alter the formation of solid electrolyte interphases (SEIs) in the first cycle. The depth profiles of chemical composition from external into internal electrode illustrate that the fusion electrode modification not only forms a boundary to balance the interface between internal and external electrodes but also stabilizes the SEIs formation and soothe the expansion of micro-sized electrode. Through these effect approaches, the performance of micro-sized Si waste electrode can be boosted from its serious capacity degradation to potential retention (200 cycles, 1100 mAh/g) and better meet the requirements for facile and cost-effective in industrial production.

  17. Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma

    Science.gov (United States)

    Han, Jeong Hwan; Lee, Byoung Kook; Jung, Eun Ae; Kim, Hyo-Suk; Kim, Seong Jun; Kim, Chang Gyoun; Chung, Taek-Mo; An, Ki-Seok

    2015-12-01

    Amorphous ZnSnOx (ZTO) films were prepared using plasma-enhanced atomic layer deposition (PEALD) in a temperature range of 100-200 °C. Metal-organic precursors of Sn(dmamp)2 (dmamp = bis(1-dimethylamino-2-methyl-2-propoxide) and diethylzinc were employed as sources of Sn and Zn, respectively, in combination with O2 plasma as a reactant. Sn levels in the ZTO films were controlled by varying the SnO2/ZnO cycle ratio from 0 to 8. According to the growth behaviour of the ZTO film by alternating SnO2 and ZnO PEALD cycles, it was observed that ZnO growth on Sn-rich ZTO film is retarded, whereas SnO2 growth is enhanced on Zn-rich ZTO film. The chemical states of the ZTO films were confirmed by X-ray photoelectron spectroscopy (XPS); the chemical compositions of the ZTO films were characterised by XPS depth profiling. Grazing-angle X-ray diffraction revealed that the PEALD ZTO films possess an amorphous structure, irrespective of Sn levels from 20 to 59 at.%. ZTO films with intermediate Sn at.% exhibited smooth surface morphology compared to binary ZnO and SnO2 films. Additionally, the step coverage of a ZTO film deposited on hole pattern with an aspect ratio of 8 and opening diameter of 110 nm was about 93%, suggesting the realisation of self-limited growth.

  18. Work function tuning of plasma-enhanced atomic layer deposited WC{sub x}N{sub y} electrodes for metal/oxide/semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Zonensain, Oren; Fadida, Sivan; Eizenberg, Moshe [Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Fisher, Ilanit; Gao, Juwen; Chattopadhyay, Kaushik; Harm, Greg; Mountsier, Tom; Danek, Michal [Lam Research Corporation, 4000 N. First Street, San Jose, California 95134 (United States)

    2015-02-23

    One of the main challenges facing the integration of metals as gate electrodes in advanced MOS devices is control over the Fermi level position at the metal/dielectric interface. In this study, we demonstrate the ability to tune the effective work function (EWF) of W-based electrodes by process modifications of the atomic layer deposited (ALD) films. Tungsten carbo-nitrides (WC{sub x}N{sub y}) films were deposited via plasma-enhanced and/or thermal ALD processes using organometallic precursors. The process modifications enabled us to control the stoichiometry of the WC{sub x}N{sub y} films. Deposition in hydrogen plasma (without nitrogen based reactant) resulted in a stoichiometry of WC{sub 0.4} with primarily W-C chemical bonding, as determined by x-ray photoelectron spectroscopy. These films yielded a relatively low EWF of 4.2 ± 0.1 eV. The introduction of nitrogen based reactant to the plasma or the thermal ALD deposition resulted in a stoichiometry of WC{sub 0.1}N{sub 0.6–0.8} with predominantly W-N chemical bonding. These films produced a high EWF of 4.7 ± 0.1 eV.

  19. Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition

    Science.gov (United States)

    Dendooven, Jolien; Solano, Eduardo; Minjauw, Matthias M.; Van de Kerckhove, Kevin; Coati, Alessandro; Fonda, Emiliano; Portale, Giuseppe; Garreau, Yves; Detavernier, Christophe

    2016-11-01

    We report the design of a mobile setup for synchrotron based in situ studies during atomic layer processing. The system was designed to facilitate in situ grazing incidence small angle x-ray scattering (GISAXS), x-ray fluorescence (XRF), and x-ray absorption spectroscopy measurements at synchrotron facilities. The setup consists of a compact high vacuum pump-type reactor for atomic layer deposition (ALD). The presence of a remote radio frequency plasma source enables in situ experiments during both thermal as well as plasma-enhanced ALD. The system has been successfully installed at different beam line end stations at the European Synchrotron Radiation Facility and SOLEIL synchrotrons. Examples are discussed of in situ GISAXS and XRF measurements during thermal and plasma-enhanced ALD growth of ruthenium from RuO4 (ToRuS™, Air Liquide) and H2 or H2 plasma, providing insights in the nucleation behavior of these processes.

  20. Nonthermal atmospheric pressure plasma enhances mouse limb bud survival, growth, and elongation.

    Science.gov (United States)

    Chernets, Natalie; Zhang, Jun; Steinbeck, Marla J; Kurpad, Deepa S; Koyama, Eiki; Friedman, Gary; Freeman, Theresa A

    2015-01-01

    The enhanced differentiation of mesenchymal cells into chondrocytes or osteoblasts is of paramount importance in tissue engineering and regenerative therapies. A newly emerging body of evidence demonstrates that appendage regeneration is dependent on reactive oxygen species (ROS) production and signaling. Thus, we hypothesized that mesenchymal cell stimulation by nonthermal (NT)-plasma, which produces and induces ROS, would (1) promote skeletal cell differentiation and (2) limb autopod development. Stimulation with a single treatment of NT-plasma enhanced survival, growth, and elongation of mouse limb autopods in an in vitro organ culture system. Noticeable changes included enhanced development of digit length and definition of digit separation. These changes were coordinated with enhanced Wnt signaling in the distal apical epidermal ridge (AER) and presumptive joint regions. Autopod development continued to advance for approximately 144 h in culture, seemingly overcoming the negative culture environment usually observed in this in vitro system. Real-time quantitative polymerase chain reaction analysis confirmed the up-regulation of chondrogenic transcripts. Mechanistically, NT-plasma increased the number of ROS positive cells in the dorsal epithelium, mesenchyme, and the distal tip of each phalange behind the AER, determined using dihydrorhodamine. The importance of ROS production/signaling during development was further demonstrated by the stunting of digital outgrowth when anti-oxidants were applied. Results of this study show NT-plasma initiated and amplified ROS intracellular signaling to enhance development of the autopod. Parallels between development and regeneration suggest that the potential use of NT-plasma could extend to both tissue engineering and clinical applications to enhance fracture healing, trauma repair, and bone fusion.

  1. Properties of HfAlO film deposited by plasma enhanced atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Duo [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); Cheng, Xinhong, E-mail: xh_cheng@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); Jia, Tingting; Zheng, Li; Xu, Dawei; Wang, Zhongjian; Xia, Chao; Yu, Yuehui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China)

    2013-07-15

    Plasma enhanced atomic layer deposition (PEALD) method can reduce film growing temperature, and allow in situ plasma treatment. In this work, HfAlO and HfO{sub 2} films were deposited with PEALD at 160 °C. Microstructure analysis showed that both films were amorphous after rapid thermal annealing (RTA) treatment, and HfAlO sample showed better interfacial structure than HfO{sub 2}. X-ray photoelectron spectroscopy (XPS) spectra indicated that main component of the interfacial layer of HfAlO sample was Hf–Si–O and Al–Si–O bonds, the valence band offset value between the HfAlO film and Si substrate was calculated to be 2.5 eV. The dominant leakage current mechanism of the samples was Schottky emission at a low electric field (<1.4 MV/cm), and Poole–Frenkel emission mechanism at a higher electric field (>1.4 MV/cm). The equivalent oxide thicknesses (EOT) of the HfAlO samples were 1.0 nm and 1.3 nm, respectively. The density of interface states between dielectric and substrate were calculated to be 1.2 × 10{sup 12} eV{sup −1}cm{sup −2} and 1.3 × 10{sup 12} eV{sup −1}cm{sup −2}, respectively. In comparison with HfO{sub 2} film, HfAlO film has good interfacial structure and electrical performance.

  2. Ag films grown by remote plasma enhanced atomic layer deposition on different substrates

    Energy Technology Data Exchange (ETDEWEB)

    Amusan, Akinwumi A., E-mail: akinwumi.amusan@ovgu.de; Kalkofen, Bodo; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Gargouri, Hassan; Wandel, Klaus; Pinnow, Cay [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)

    2016-01-15

    Silver (Ag) layers were deposited by remote plasma enhanced atomic layer deposition (PALD) using Ag(fod)(PEt{sub 3}) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) as precursor and hydrogen plasma on silicon substrate covered with thin films of SiO{sub 2}, TiN, Ti/TiN, Co, Ni, and W at different deposition temperatures from 70  to 200 °C. The deposited silver films were analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) with energy dispersive x-ray spectroscopy, four point probe measurement, ellipsometric measurement, x-ray fluorescence (XRF), and x-ray diffraction (XRD). XPS revealed pure Ag with carbon and oxygen contamination close to the detection limit after 30 s argon sputtering for depositions made at 120 and 200 °C substrate temperatures. However, an oxygen contamination was detected in the Ag film deposited at 70 °C after 12 s argon sputtering. A resistivity of 5.7 × 10{sup −6} Ω cm was obtained for approximately 97 nm Ag film on SiO{sub 2}/Si substrate. The thickness was determined from the SEM cross section on the SiO{sub 2}/Si substrate and also compared with XRF measurements. Polycrystalline cubic Ag reflections were identified from XRD for PALD Ag films deposited at 120 and 200 °C. Compared to W surface, where poor adhesion of the films was found, Co, Ni, TiN, Ti/TiN and SiO{sub 2} surfaces had better adhesion for silver films as revealed by SEM, TEM, and AFM images.

  3. Quality control of flaxseed grain processed with microwave roasting heat treatment

    OpenAIRE

    Puvača, Nikola M.; Stanaćev, Vidica; Jajić, Igor; Lević, Jovanka D.; Glamočić, Dragan; Krstović, Saša Z.

    2013-01-01

    Aim of this study was to investigate effects of microwave roasting on basic chemical composition, crude protein solubility and amino acid composition of flaxseed grain. Flaxseed was microwaved in a microwave oven Samsung GE82N-B with LED display at 450W for 0, 1, 3 and 5 minutes. Microwave roasting during 5 minutes led to statistically significant (P

  4. Plasma-enhanced atomic-layer-deposited MoO{sub x} emitters for silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ziegler, Johannes; Schneider, Thomas; Sprafke, Alexander N. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Mews, Mathias; Korte, Lars [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Institute for Silicon-Photovoltaics, Berlin (Germany); Kaufmann, Kai [Fraunhofer Center for Silicon Photovoltaics CSP, Halle (Germany); University of Applied Sciences, Hochschule Anhalt Koethen, Koethen (Germany); Wehrspohn, Ralf B. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Fraunhofer Institute for Mechanics of Materials IWM Halle, Halle (Germany)

    2015-09-15

    A method for the deposition of molybdenum oxide (MoO{sub x}) with high growth rates at temperatures below 200 C based on plasma-enhanced atomic layer deposition is presented. The stoichiometry of the over-stoichiometric MoO{sub x} films can be adjusted by the plasma parameters. First results of these layers acting as hole-selective contacts in silicon heterojunction solar cells are presented and discussed. (orig.)

  5. Microwave spectrum, structure, and quantum chemical studies of a compound of potential astrochemical and astrobiological interest: Z-3-amino-2-propenenitrile.

    Science.gov (United States)

    Askeland, Eva; Møllendal, Harald; Uggerud, Einar; Guillemin, Jean-Claude; Aviles Moreno, Juan-Ramon; Demaison, Jean; Huet, Thérèse R

    2006-11-23

    Z-3-Amino-2-propenenitrile, H2NCH=CHCN, a compound of astrochemical and astrobiological interest, has been studied by Stark and Fourier transform microwave spectroscopy along with eight of its isotopologues; the synthesis of five of these are reported. The spectra of the ground vibrational state and of three vibrationally excited states belonging to the two lowest normal modes were assigned for the parent species, whereas the ground states were assigned for the isotopologues. The frequency of the lowest in-plane bending fundamental vibration was determined to be 152(20) cm(-1) and the frequency of the lowest out-of-plane fundamental mode was found to be 176(20) cm(-1) by relative intensity measurements. A delicate problem is whether this compound is planar or slightly nonplanar. It was found that the rotational constants of the nine species cannot be used to conclude definitely whether the molecule is planar or not. The experimental dipole moment is mu(a) = 16.45(12), mu(b) = 2.86(6), mu(c) = 0 (assumed), and mu(tot.) = 16.70(12) x 10(-30) C m [5.01(4) D]. The quadrupole coupling constants of the two nitrogen nuclei are chi(aa) = -1.4917(21) and chi(cc) = 1.5644(24) MHz for the nitrogen atom of the cyano group and chi(aa) = 1.7262(18) and chi(cc) = -4.0591(17) MHz for the nitrogen atom of the amino group. Extensive quantum-chemical calculations have been performed, and the results obtained from these calculations have been compared with the experimental values. The equilibrium structures of vinylamine, vinyl cyanide, and Z-3-amino-2-propenenitrile have been calculated. These calculations have established that the equilibrium structure of the title compound is definitely nonplanar. However, the MP2/VQZ energy difference between the planar and nonplanar forms is small, only -423 J/mol. Z-Amino-2-propenenitrile and E-3-amino-2-propenenitrile are formed simply by mixing ammonia and cyanoacetylene at room temperature. A plausible reaction path has been modeled. G3

  6. Microporous Ni@NiO nanoparticles prepared by chemically dealloying Al3Ni2@Al nanoparticles as a high microwave absorption material

    Science.gov (United States)

    Pang, Yu; Xie, Xiubo; Li, Da; Chou, Wusheng; Liu, Tong

    2017-03-01

    The Al3Ni2@Al nanoparticles (NPs) were prepared from Ni45Al55 master alloy by hydrogen plasma-metal reaction method, and were subsequently dealloyed to produce porous Ni@NiO NPs of 36 nm. The pore size ranges from 0.7 to 1.6 nm, leading to large specific surface area of 69.5 m2/g and big pore volume of 0.507 cc/g. The saturation magnetization (MS) and coercivity (HC) of the microporous Ni@NiO NPs are 11.5 emu/g and 5.2 Oe. They exhibit high microwave absorption performance with a minimum reflection coefficient (RC) of -86.9 dB and an absorption bandwidth of 2.6 GHz (RC≤-10 dB) at thickness of 4.5 mm. The enhanced microwave absorption properties are attributed to the synergistic effect of the magnetic Ni core and dielectric NiO shell, and the micropore architecture. The NPs with micropore morphology and core/shell structure open a new way to modify the microwave absorption performance.

  7. Application of Microwave Irradiation to Rapid Organic Inclusion Complex

    Institute of Scientific and Technical Information of China (English)

    Yan; Xiaohua

    2001-01-01

    Microwave irradiation has been used in chemical laboratories for moisture analysis and wet asking procedures of biological and geological materials for a number of years [1]. More recently the microwave irradiation also widely used for rapid organic synthesis [2]. However, there have not yet been any reports concerning the ultilisatioin of microwave ovens in the routine organic inclusion complex regularly in chemical research.  ……

  8. 一种新型同轴微波化学反应器的仿真分析%Simulation analysis of a novel coaxial microwave chemical reactor

    Institute of Scientific and Technical Information of China (English)

    林兴锦; 杨阳; 黄卡玛

    2014-01-01

    For the study of microwave chemistry,it is necessary to develop a reactor with small-size and wide operation frequency band. This paper presents a novel microwave coaxial reactor. Its main part is a coaxial cavity,one end of which is coaxial port filled with PTFE,and the other end is a short circuit plane. Two orifices which are designed as cut-off waveguides for microwave are atta-ched on the cavity as the passageway of sample solutions. The distribution of electromagnetic field and temperature field of this novel microwave coaxial reactor using for heating the heavy oil at 915 MHz,2450 MHz and 5800 MHz are simulated with finite-element method multi-fields coupling analysis. It is clear from the results that this novel microwave coaxial reactor could work properly over a wide frequency band. So according to the requirements of the experiments,we could choose the operation frequency over a wide frequency band to get the optimal reaction effect.%针对微波化学研究需要具有尺寸小、工作频带宽等特点的实验装置,本文设计了一种新型同轴微波反应装置。该装置主体是一个同轴腔,一端是填充了聚四氟乙烯的同轴接口,另一端为短路面,还带有两个具有截止波导作用的样品溶液进出口。本文通过基于有限元法的多物理场耦合计算,利用同轴微波反应装置对重油进行加热,得到了915 MHz、2450 MHz以及5800 MHz三个常用的工作频率下,反应装置中的电场以及温度场的分布。从仿真结果可以看出,新型同轴微波反应装置在较宽的微波频段内都可以正常工作。因此,可以根据实验的需求,在较宽的范围内选择工作频率,得到最优化的反应效果。

  9. Microwave power engineering applications

    CERN Document Server

    Okress, Ernest C

    2013-01-01

    Microwave Power Engineering, Volume 2: Applications introduces the electronics technology of microwave power and its applications. This technology emphasizes microwave electronics for direct power utilization and transmission purposes. This volume presents the accomplishments with respect to components, systems, and applications and their prevailing limitations in the light of knowledge of the microwave power technology. The applications discussed include the microwave heating and other processes of materials, which utilize the magnetron predominantly. Other applications include microwave ioni

  10. Advances in microwaves 8

    CERN Document Server

    Young, Leo

    2013-01-01

    Advances in Microwaves, Volume 8 covers the developments in the study of microwaves. The book discusses the circuit forms for microwave integrated circuits; the analysis of microstrip transmission lines; and the use of lumped elements in microwave integrated circuits. The text also describes the microwave properties of ferrimagnetic materials, as well as their interaction with electromagnetic waves propagating in bounded waveguiding structures. The integration techniques useful at high frequencies; material technology for microwave integrated circuits; specific requirements on technology for d

  11. Effect of wet-chemical substrate pretreatment on electronic interface properties and recombination losses of a -Si:H/c -Si and a -SiN{sub x}:H/c -Si hetero-interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Angermann, Heike; Conrad, Erhard; Korte, Lars; Schmidt, Manfred [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Institut fuer Silizium-Photovoltaik, Berlin (Germany); Wuensch, Frank; Kunst, Marinus [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Institut Solare Brennstoffe und Energiespeichermaterialien, Berlin (Germany); Laades, Abdelazize; Stuerzebecher, Uta [CiS Institut fuer Mikrosensorik GmbH, SolarZentrum Erfurt (Germany)

    2011-03-15

    Surface charge, surface state density and interface recombination behavior on polished float zone (FZ) solar cell substrates were investigated after various wet-chemical pre-cleaning procedures and deposition of amorphous silicon (a-Si:H) or silicon nitride (a-SiNx:H). Applying surface photo voltage (SPV), microwave detected photo conductance decay ({mu}W-PCD) and transient microwave conduction (TRMC) measurements, electronic interface properties were monitored repeatedly during the preparation processes. As shown for an inverted a-Si:H/c-Si hetero-junction structure, with front side passivation by a-SiN{sub x}:H and a p-type a-Si:H emitter on the rear side, the effect of optimised wet-chemical pre-treatment can be preserved during the subsequent soft plasma enhanced chemical vapour deposition of a-Si:H or a-SiN{sub x}:H. This leads to hetero-interfaces with low interface recombination velocities. These results were compared to previously reported findings, obtained on textured Czochralski (CZ) single crystalline substrates. a-SiN{sub x}:H is known to result in a field effect passivation. Nevertheless a strong influence of wet-chemical treatments on surface charge and recombination losses was observed on both flat and textured a-SiN{sub x}:H/c-Si interfaces. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes

    Science.gov (United States)

    Chen, Zheng; Wang, Haoran; Wang, Xiao; Chen, Ping; Liu, Yunfei; Zhao, Hongyu; Zhao, Yi; Duan, Yu

    2017-01-01

    Encapsulation is essential to protect the air-sensitive components of organic light-emitting diodes (OLEDs) such as active layers and cathode electrodes. In this study, hybrid zirconium inorganic/organic nanolaminates were fabricated using remote plasma enhanced atomic layer deposition (PEALD) and molecular layer deposition at a low temperature. The nanolaminate serves as a thin-film encapsulation layer for OLEDs. The reaction mechanism of PEALD process was investigated using an in-situ quartz crystal microbalance (QCM) and in-situ quadrupole mass spectrometer (QMS). The bonds present in the films were determined by Fourier transform infrared spectroscopy. The primary reaction byproducts in PEALD, such as CO, CO2, NO, H2O, as well as the related fragments during the O2 plasma process were characterized using the QMS, indicating a combustion-like reaction process. The self-limiting nature and growth mechanisms of the ZrO2 during the complex surface chemical reaction of the ligand and O2 plasma were monitored using the QCM. The remote PEALD ZrO2/zircone nanolaminate structure prolonged the transmission path of water vapor and smooth surface morphology. Consequently, the water barrier properties were significantly improved (reaching 3.078 × 10‑5 g/m2/day). This study also shows that flexible OLEDs can be successfully encapsulated to achieve a significantly longer lifetime.

  13. Plasma-enhanced CVD of functional coatings in Ar/maleic anhydride/C2H2 homogeneous dielectric barrier discharges at atmospheric pressure

    Science.gov (United States)

    Zajíčková, Lenka; Jelínek, Petr; Obrusník, Adam; Vodák, Jiří; Nečas, David

    2017-03-01

    In this contribution, we focus on the general problems of plasma-enhanced chemical vapor deposition in atmospheric pressure dielectric barrier discharges, i.e. deposition uniformity, film roughness and the formation of dust particles, and demonstrate them on the example of carboxyl coatings prepared by co-polymerization of acetylene and maleic anhydride. Since the transport of monomers at atmospheric pressure is advection-driven, special attention is paid to the gas dynamics simulations, gas flow patterns, velocity and residence time. By using numerical simulations, we design an optimized gas supply geometry capable of synthesizing uniform layers. The selection of the gas mixture containing acetylene was motivated by two of its characteristics: (i) suppression of filaments in dielectric barrier discharges, and (ii) improved film cross-linking, keeping the amount of functional groups high. However, acetylene discharges are prone to the formation of nanoparticles that can be incorporated into the deposited films, leading to their high roughness. Therefore, we also discuss the role of the gas composition, the spatial position of the substrate with respect to gas flow and the deposition time on the topography of the deposited films.

  14. Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho; Cha, Suk Won, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical and Aerospace Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-744 (Korea, Republic of); Ji, Sanghoon [Graduate School of Convergence Science and Technology, Seoul National University, Iui-dong, Yeongtong-gu, Suwon 443-270 (Korea, Republic of); Hong, Soon Wook; Koo, Bongjun; Kim, Young-Beom, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of); An, Jihwan [Manufacturing Systems and Design Engineering Programme, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 139-743 (Korea, Republic of)

    2016-01-15

    Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solid oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.

  15. Compact Microwave Fourier Spectrum Analyzer

    Science.gov (United States)

    Savchenkov, Anatoliy; Matsko, Andrey; Strekalov, Dmitry

    2009-01-01

    A compact photonic microwave Fourier spectrum analyzer [a Fourier-transform microwave spectrometer, (FTMWS)] with no moving parts has been proposed for use in remote sensing of weak, natural microwave emissions from the surfaces and atmospheres of planets to enable remote analysis and determination of chemical composition and abundances of critical molecular constituents in space. The instrument is based on a Bessel beam (light modes with non-zero angular momenta) fiber-optic elements. It features low power consumption, low mass, and high resolution, without a need for any cryogenics, beyond what is achievable by the current state-of-the-art in space instruments. The instrument can also be used in a wide-band scatterometer mode in active radar systems.

  16. A Microwave Thruster for Spacecraft Propulsion

    Energy Technology Data Exchange (ETDEWEB)

    Chiravalle, Vincent P [Los Alamos National Laboratory

    2012-07-23

    This presentation describes how a microwave thruster can be used for spacecraft propulsion. A microwave thruster is part of a larger class of electric propulsion devices that have higher specific impulse and lower thrust than conventional chemical rocket engines. Examples of electric propulsion devices are given in this presentation and it is shown how these devices have been used to accomplish two recent space missions. The microwave thruster is then described and it is explained how the thrust and specific impulse of the thruster can be measured. Calculations of the gas temperature and plasma properties in the microwave thruster are discussed. In addition a potential mission for the microwave thruster involving the orbit raising of a space station is explored.

  17. Microwave chirality discrimination in enantiomeric liquids

    Science.gov (United States)

    Hollander, E.; Kamenetskii, E. O.; Shavit, R.

    2017-07-01

    Chirality discrimination is of fundamental interest in biology, chemistry, and metamaterial studies. In optics, near-field plasmon-resonance spectroscopy with superchiral probing fields is effectively applicable for analyses of large biomolecules with chiral properties. We show possibility for microwave near-field chirality discrimination analysis based on magnon-resonance spectroscopy. Newly developed capabilities in microwave sensing using magnetoelectric (ME) probing fields originated from multiresonance magnetic-dipolar-mode oscillations in quasi-2D yttrium-iron-garnet disks provide potential for unprecedented measurements of chemical and biological objects. We report on microwave near-field chirality discrimination for aqueous D- and L-glucose solutions. The shown ME-field sensing is addressed to deepen our understanding of microwave-biosystem interactions. It can also be important for an analysis and design of microwave chiral metamaterials.

  18. Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements.

    Science.gov (United States)

    Melo, Luis; Burton, Geoff; Kubik, Philip; Wild, Peter

    2016-04-04

    Long period gratings (LPGs) are coated with hafnium oxide using plasma-enhanced atomic layer deposition (PEALD) to increase the sensitivity of these devices to the refractive index of the surrounding medium. PEALD allows deposition at low temperatures which reduces thermal degradation of UV-written LPGs. Depositions targeting three different coating thicknesses are investigated: 30 nm, 50 nm and 70 nm. Coating thickness measurements taken by scanning electron microscopy of the optical fibers confirm deposition of uniform coatings. The performance of the coated LPGs shows that deposition of hafnium oxide on LPGs induces two-step transition behavior of the cladding modes.

  19. 多功能微波等离子体化学反应装置及其应用%A Multifunctional Microwave Plasma Chemical Reaction Apparatus and Its Application

    Institute of Scientific and Technical Information of China (English)

    胡征; 王喜章; 吴强; 徐华; 苗水; 陈懿

    2001-01-01

    建立了一台多功能微波等离子体化学反应实验装置,可用于化学合成、表面处理、多相催化等多种研究,为新方法、新工艺、新思路的实现提供了实验基础。%A multifunctional microwave plasma apparatus has been set up, which can be used in the fields such as chemical synthesis, surface modification and heterogeneous catalysis. The establishment of this apparatus has laid the experimental foundation for new method, new technology and new train of thought.

  20. Microwave irradiation induced changes in protein molecular structures of barley grains: relationship to changes in protein chemical profile, protein subfractions, and digestion in dairy cows.

    Science.gov (United States)

    Yan, Xiaogang; Khan, Nazir A; Zhang, Fangyu; Yang, Ling; Yu, Peiqiang

    2014-07-16

    The objectives of this study were to evaluate microwave irradiation (MIR) induced changes in crude protein (CP) subfraction profiles, ruminal CP degradation characteristics and intestinal digestibility of rumen undegraded protein (RUP), and protein molecular structures in barley (Hordeum vulgare) grains. Samples from hulled (n = 1) and hulless cultivars (n = 2) of barley, harvested from four replicate plots in two consecutive years, were evaluated. The samples were either kept as raw or irradiated in a microwave for 3 min (MIR3) or 5 min (MIR5). Compared to raw grains, MIR5 decreased the contents of rapidly degradable CP subfraction (from 45.22 to 6.36% CP) and the ruminal degradation rate (from 8.16 to 3.53%/h) of potentially degradable subfraction. As a consequence, the effective ruminal degradability of CP decreased (from 55.70 to 34.08% CP) and RUP supply (from 43.31 to 65.92% CP) to the postruminal tract increased. The MIR decreased the spectral intensities of amide 1, amide II, α-helix, and β-sheet and increased their ratios. The changes in protein spectral intensities were strongly correlated with the changes in CP subfractions and digestive kinetics. These results show that MIR for a short period (5 min) with a lower energy input can improve the nutritive value and utilization of CP in barely grains.

  1. Phase Transition and Microwave Dielectric Properties of Low-Temperature Sintered BiCu2VO6 Ceramic and its Chemical Compatibility with Silver

    Science.gov (United States)

    Li, Chunchun; Xiang, Huaicheng; Fang, Liang

    2016-01-01

    In this work, a low-firing microwave dielectric ceramic BiCu2VO6 with monoclinic structure was prepared through a solid state reaction method. Dense ceramic could be obtained when sintered at 740°C with a relative density about 96.7%. A diffusive phase transition was observed from the temperature dependence of the relative permittivity and loss tangent. The best sintered sample at 740°C exhibited the optimum microwave dielectric properties with a relative permittivity ~22.7, a quality factor ~11,960 GHz (at 11.0 GHz), and a temperature coefficient of resonant frequency of -17.2 ppm/°C. From the x-ray diffraction, backscattered electron imaging results of the cofired sample with 20 wt.% silver, the BiCu2VO6 ceramic was found not to react with Ag at 740°C. It might be promising for the low-temperature cofired ceramics and dielectric resonator applications.

  2. Microwave combustion and sintering without isostatic pressure

    Energy Technology Data Exchange (ETDEWEB)

    Ebadian, M.A.

    1998-01-01

    In recent years interest has grown rapidly in the application of microwave energy to the processing of ceramics, composites, polymers, and other materials. Advances in the understanding of microwave/materials interactions will facilitate the production of new ceramic materials with superior mechanical properties. One application of particular interest is the use of microwave energy for the mobilization of uranium for subsequent redeposition. Phase III (FY98) will focus on the microwave assisted chemical vapor infiltration tests for mobilization and redeposition of radioactive species in the mixed sludge waste. Uranium hexachloride and uranium (IV) borohydride are volatile compounds for which the chemical vapor infiltration procedure might be developed for the separation of uranium. Microwave heating characterized by an inverse temperature profile within a preformed ceramic matrix will be utilized for CVI using a carrier gas. Matrix deposition is expected to commence from the inside of the sample where the highest temperature is present. The preform matrix materials, which include aluminosilicate based ceramics and silicon carbide based ceramics, are all amenable to extreme volume reduction, densification, and vitrification. Important parameters of microwave sintering such as frequency, power requirement, soaking temperature, and holding time will be investigated to optimize process conditions for the volatilization of uranyl species using a reactive carrier gas in a microwave chamber.

  3. Practical microwave electron devices

    CERN Document Server

    Meurant, Gerard

    2013-01-01

    Practical Microwave Electron Devices provides an understanding of microwave electron devices and their applications. All areas of microwave electron devices are covered. These include microwave solid-state devices, including popular microwave transistors and both passive and active diodes; quantum electron devices; thermionic devices (including relativistic thermionic devices); and ferrimagnetic electron devices. The design of each of these devices is discussed as well as their applications, including oscillation, amplification, switching, modulation, demodulation, and parametric interactions.

  4. Atmospheric Pressure Microwave Assisted Heterogeneous Catalytic Reactions

    Directory of Open Access Journals (Sweden)

    Farid Chemat

    2007-07-01

    Full Text Available The purpose of the study was to investigate microwave selective heatingphenomena and their impact on heterogeneous chemical reactions. We also present a toolwhich will help microwave chemists to answer to such questions as “My reaction yields90% after 7 days at reflux; is it possible to obtain the same yield after a few minutes undermicrowaves?” and to have an approximation of their reactions when conducted undermicrowaves with different heterogeneous procedures. This model predicting reactionkinetics and yields under microwave heating is based on the Arrhenius equation, inagreement with experimental data and procedures.

  5. Thermal and plasma enhanced atomic layer deposition of SiO{sub 2} using commercial silicon precursors

    Energy Technology Data Exchange (ETDEWEB)

    Putkonen, Matti, E-mail: matti.putkonen@vtt.fi [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, Espoo (Finland); Laboratory of Inorganic Chemistry, Aalto University School of Chemical Technology, P.O. Box 16100, FI-00076, Espoo (Finland); Bosund, Markus [Beneq Oy, Ensimmäinen savu, FI-01510, Vantaa (Finland); Ylivaara, Oili M.E.; Puurunen, Riikka L.; Kilpi, Lauri; Ronkainen, Helena [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, Espoo (Finland); Sintonen, Sakari; Ali, Saima; Lipsanen, Harri [Aalto University School of Electrical Engineering, Department of Micro- and Nanosciences, P.O. Box 13500, FI-00076 Espoo (Finland); Liu, Xuwen; Haimi, Eero; Hannula, Simo-Pekka [Aalto University School of Chemical Technology, Department of Materials Science and Engineering, P.O. Box 16200, FI-00076 Espoo (Finland); Sajavaara, Timo [University of Jyväskylä, Department of Physics, P.O. Box 35, FI-40014 Jyväskylä (Finland); Buchanan, Iain; Karwacki, Eugene [Air Products and Chemicals Inc., 7201 Hamilton Blvd., Allentown, PA 18195 (United States); Vähä-Nissi, Mika [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, Espoo (Finland)

    2014-05-02

    In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R and D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O{sub 3} as oxidant and with substrates measuring 150 × 400 mm. The SiO{sub 2} film deposition rate was greatly dependent on the precursors used, highest values being 1.5–2.0 Å/cycle at 30–200 °C for one precursor with an O{sub 2} plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content increased at low deposition temperatures. - Highlights: • SiO{sub 2} thin film is deposited by thermal and plasma enhanced atomic layer deposition (PEALD). • We report low-temperature deposition of SiO{sub 2} even at 30 °C by PEALD. • Scaling up of the atomic layer deposition processes to industrial batch is reported. • Deposited films had low low compressive residual stress and good conformality.

  6. Thermal and plasma-enhanced oxidation of ALD TiN

    NARCIS (Netherlands)

    Groenland, A.W.; Brunets, I.; Boogaard, A.; Aarnink, A.A.I.; Kovalgin, A.Y.; Schmitz, J.

    2008-01-01

    Despite its high chemical stability, sputtered stoichiometric TiN can still be oxidized at temperatures below 400 ºC, whereas a non-stoichiometric TiN is known to oxidize even at room temperature. In this work, the oxidation behaviour of thin TiN layers, realized via atomic layer deposition (ALD), i

  7. Plasma-Enhanced Combustion of Hydrocarbon Fuels and Fuel Blends Using Nanosecond Pulsed Discharges

    Energy Technology Data Exchange (ETDEWEB)

    Cappelli, Mark; Mungal, M Godfrey

    2014-10-28

    This project had as its goals the study of fundamental physical and chemical processes relevant to the sustained premixed and non-premixed jet ignition/combustion of low grade fuels or fuels under adverse flow conditions using non-equilibrium pulsed nanosecond discharges.

  8. Room temperature radio-frequency plasma-enhanced pulsed laser deposition of ZnO thin films

    Science.gov (United States)

    Huang, S.-H.; Chou, Y.-C.; Chou, C.-M.; Hsiao, V. K. S.

    2013-02-01

    In this study, we compared the crystalline structures, optical properties, and surface morphologies of ZnO thin films deposited on silicon and glass substrates by conventional pulsed laser deposition (PLD) and radio-frequency (RF) plasma-enhanced PLD (RF-PEPLD). The depositions were performed at room temperature under 30-100 mTorr pressure conditions. The RF-PEPLD process was found to have deposited a ZnO structure with preferred (0 0 2) c-axis orientation at a higher deposition rate; however, the RF-PEPLD process generated more defects in the thin films. The application of oxygen pressure to the RF-PEPLD process reduced defects effectively and also increased the deposition rate.

  9. Plasma-Enhanced Atomic Layer Deposition (PEALD of TiN using the Organic Precursor Tetrakis(ethylmethylamidoTitanium (TEMAT

    Directory of Open Access Journals (Sweden)

    Chen Z.X.

    2016-01-01

    Full Text Available This paper presents the plasma-enhanced atomic layer deposition (PEALD of titanium nitride (TiN using the organic precursor tetrakis(ethylmethylamidotitanium (TEMAT, with remote ammonia (NH3 plasma as reactant gas. This work investigates the impact of substrate temperature, from 150-350°C, and plasma times, from 5-30s, on deposition rate, resistivity, carbon content, N/Ti ratio and film density. The lowest resistivity of ~ 250 μΩ.cm was achieved at substrate temperatures 300-350°C and plasma time of 20s. At low substrate temperatures, although deposition was possible, carbon concentration was found to be higher, which thus affects film resistivity and density.

  10. Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond

    Science.gov (United States)

    Ohtani, Ryota; Yamamoto, Takashi; Janssens, Stoffel D.; Yamasaki, Satoshi; Koizumi, Satoshi

    2014-12-01

    Microwave plasma enhanced chemical vapor deposition is a promising way to generate n-type, e.g., phosphorus-doped, diamond layers for the fabrication of electronic components, which can operate at extreme conditions. However, a deeper understanding of the doping process is lacking and low phosphorus incorporation efficiencies are generally observed. In this work, it is shown that systematically changing the internal design of a non-commercial chemical vapor deposition chamber, used to grow diamond layers, leads to a large increase of the phosphorus doping efficiency in diamond, produced in this device, without compromising its electronic properties. Compared to the initial reactor design, the doping efficiency is about 100 times higher, reaching 10%, and for a very broad doping range, the doping efficiency remains highly constant. It is hypothesized that redesigning the deposition chamber generates a higher flow of active phosphorus species towards the substrate, thereby increasing phosphorus incorporation in diamond and reducing deposition of phosphorus species at reactor walls, which additionally reduces undesirable memory effects.

  11. Microwave Breast Imaging Techniques

    DEFF Research Database (Denmark)

    Zhurbenko, Vitaliy; Rubæk, Tonny

    2010-01-01

    This paper outlines the applicability of microwave radiation for breast cancer detection. Microwave imaging systems are categorized based on their hardware architecture. The advantages and disadvantages of various imaging techniques are discussed. The fundamental tradeoffs are indicated between v...

  12. Microwave Breast Imaging Techniques

    DEFF Research Database (Denmark)

    Zhurbenko, Vitaliy; Rubæk, Tonny

    2010-01-01

    This paper outlines the applicability of microwave radiation for breast cancer detection. Microwave imaging systems are categorized based on their hardware architecture. The advantages and disadvantages of various imaging techniques are discussed. The fundamental tradeoffs are indicated between...

  13. Application of microwave heating to a polyesterification plant

    NARCIS (Netherlands)

    Komorowska-Durka, M.

    2015-01-01

    Utilizing microwave irradiation, a fundamentally different method of the energy transfer, to the chemical process units can potentially be advantageous compared to the conventional heating, inter alia due to the selective nature of interaction of the microwaves with the matter. This doctoral dissert

  14. Application of microwave heating to a polyesterification plant

    NARCIS (Netherlands)

    Komorowska-Durka, M.

    2015-01-01

    Utilizing microwave irradiation, a fundamentally different method of the energy transfer, to the chemical process units can potentially be advantageous compared to the conventional heating, inter alia due to the selective nature of interaction of the microwaves with the matter. This doctoral

  15. Advances in microwaves 7

    CERN Document Server

    Young, Leo

    2013-01-01

    Advances in Microwaves, Volume 7 covers the developments in the study of microwaves. The book discusses the effect of surface roughness on the propagation of the TEM mode, as well as the voltage breakdown of microwave antennas. The text also describes the theory and design considerations of single slotted-waveguide linear arrays and the techniques and theories that led to the achievement of wide bandwidths and ultralow noise temperatures for communication applications. The book will prove invaluable to microwave engineers.

  16. Microwave Radiometer (MWR) Handbook

    Energy Technology Data Exchange (ETDEWEB)

    Morris, VR

    2006-08-01

    The Microwave Radiometer (MWR) provides time-series measurements of column-integrated amounts of water vapor and liquid water. The instrument itself is essentially a sensitive microwave receiver. That is, it is tuned to measure the microwave emissions of the vapor and liquid water molecules in the atmosphere at specific frequencies.

  17. Nonlinearities in Microwave Superconductivity

    OpenAIRE

    Ledenyov, Dimitri O.; Ledenyov, Viktor O.

    2012-01-01

    The research is focused on the modeling of nonlinear properties of High Temperature Superconducting (HTS) thin films, using Bardeen, Cooper, Schrieffer and Lumped Element Circuit theories, with purpose to enhance microwave power handling capabilities of microwave filters and optimize design of microwave circuits in micro- and nano- electronics.

  18. Color sensing under microwaves

    Science.gov (United States)

    Choudhury, Debesh

    2013-09-01

    Inspired by recent results of artificial color due to Caulfield, we carry out intuitive experimental investigations on color sensing under microwave illumination. Experiemnts have been carried out using a Gunn diode as the microwave source and a microwave diode as a detector. More precise experimental studies have also been carried out utilizing a vector network analyzer. Preliminary results of the experiments validate the feasibility of sensing and discriminating otherwise visual colors under microwave illumination. Caulfield's presumption possibly paves the way for artificial color perception using microwaves.

  19. Microwave Plasma Chemical Vapor Deposition of Carbon Coatings on LiNi1/3Co1/3Mn1/3O2 for Li-Ion Battery Composite Cathodes

    Energy Technology Data Exchange (ETDEWEB)

    Doeff, M.M.; Kostecki, R.; Marcinek, M.; Wilcoc, J.D.

    2008-12-10

    In this paper, we report results of a novel synthesis method of thin film conductive carbon coatings on LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3}O{sub 2} cathode active material powders for lithium-ion batteries. Thin layers of graphitic carbon were produced from a solid organic precursor, anthracene, by a one-step microwave plasma chemical vapor deposition (MPCVD) method. The structure and morphology of the carbon coatings were examined using SEM, TEM, and Raman spectroscopy. The composite LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3}O{sub 2} electrodes were electrochemically tested in lithium half coin cells. The composite cathodes made of the carbon-coated LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3}O{sub 2} powder showed superior electrochemical performance and increased capacity compared to standard composite LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3}O{sub 2} electrodes.

  20. Microwave Technologies as Part of an Integrated Weed Management Strategy: A Review

    OpenAIRE

    Graham Brodie; Carmel Ryan; Carmel Lancaster

    2012-01-01

    Interest in controlling weed plants using radio frequency or microwave energy has been growing in recent years because of the growing concerns about herbicide resistance and chemical residues in the environment. This paper reviews the prospects of using microwave energy to manage weeds. Microwave energy effectively kills weed plants and their seeds; however, most studies have focused on applying the microwave energy over a sizable area, which requires about ten times the energy that is embodi...

  1. High brightness microwave lamp

    Science.gov (United States)

    Kirkpatrick, Douglas A.; Dolan, James T.; MacLennan, Donald A.; Turner, Brian P.; Simpson, James E.

    2003-09-09

    An electrodeless microwave discharge lamp includes a source of microwave energy, a microwave cavity, a structure configured to transmit the microwave energy from the source to the microwave cavity, a bulb disposed within the microwave cavity, the bulb including a discharge forming fill which emits light when excited by the microwave energy, and a reflector disposed within the microwave cavity, wherein the reflector defines a reflective cavity which encompasses the bulb within its volume and has an inside surface area which is sufficiently less than an inside surface area of the microwave cavity. A portion of the reflector may define a light emitting aperture which extends from a position closely spaced to the bulb to a light transmissive end of the microwave cavity. Preferably, at least a portion of the reflector is spaced from a wall of the microwave cavity. The lamp may be substantially sealed from environmental contamination. The cavity may include a dielectric material is a sufficient amount to require a reduction in the size of the cavity to support the desired resonant mode.

  2. Magnetoelectric fields for microwave chirality discrimination in enantiomeric liquids

    CERN Document Server

    Hollander, E; Shavit, R

    2016-01-01

    Chirality discrimination is of a fundamental interest in biology, chemistry, and metamaterial studies. In optics, near-field plasmon-resonance spectroscopy with superchiral probing fields is effectively applicable for analyses of large biomolecules with chiral properties. We show possibility for microwave near-field chirality discrimination analysis based on magnon-resonance spectroscopy. Newly developed capabilities in microwave sensing using magnetoelectric (ME) probing fields originated from multiresonance magnetic-dipolar-mode (MDM) oscillations in quasi-2D yttrium-iron-garnet (YIG) disks, provide a potential for unprecedented measurements of chemical and biological objects. We report on microwave near-field chirality discrimination for aqueous D- and L-glucose solutions. The shown ME-field sensing is addressed to microwave biomedical diagnostics and pathogen detection and to deepening our understanding of microwave-biosystem interactions. It can be also important for an analysis and design of microwave c...

  3. Microwave Technologies as Part of an Integrated Weed Management Strategy: A Review

    Directory of Open Access Journals (Sweden)

    Graham Brodie

    2012-01-01

    Full Text Available Interest in controlling weed plants using radio frequency or microwave energy has been growing in recent years because of the growing concerns about herbicide resistance and chemical residues in the environment. This paper reviews the prospects of using microwave energy to manage weeds. Microwave energy effectively kills weed plants and their seeds; however, most studies have focused on applying the microwave energy over a sizable area, which requires about ten times the energy that is embodied in conventional chemical treatments to achieve effective weed control. A closer analysis of the microwave heating phenomenon suggests that thermal runaway can reduce microwave weed treatment time by at least one order of magnitude. If thermal runaway can be induced in weed plants, the energy costs associated with microwave weed management would be comparable with chemical weed control.

  4. Microwave joining of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Silberglitt, R.; Ahmad, I. [FM Technologies, Inc., Fairfax, VA (United States); Black, W.M. [George Mason Univ., Fairfax, VA (United States)] [and others

    1995-05-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on optimization of time-temperature profiles, production of SiC from chemical precursors, and design of new applicators for joining of long tubes.

  5. Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks

    Science.gov (United States)

    Chernikova, A. G.; Kuzmichev, D. S.; Negrov, D. V.; Kozodaev, M. G.; Polyakov, S. N.; Markeev, A. M.

    2016-06-01

    We report the possibility of employment of low temperature (≤330 °C) plasma-enhanced atomic layer deposition for the formation of both electrodes and hafnium-oxide based ferroelectric in the metal-insulator-metal structures. The structural and ferroelectric properties of La doped HfO2-based layers and its evolution with the change of both La content (2.1, 3.7 and 5.8 at. %) and the temperature of the rapid thermal processing (550-750 °C) were investigated in detail. Ferroelectric properties emerged only for 2.1 and 3.7 at. % of La due to the structural changes caused by the given doping levels. Ferroelectric properties were also found to depend strongly on annealing temperature, with the most robust ferroelectric response for lowest La concentration and intermediate 650 °C annealing temperature. The long term wake-up effect and such promising endurance characteristics as 3 × 108 switches by bipolar voltage cycles with 30 μs duration and ± 3 MV/cm amplitude without any decrease of remnant polarization value were demonstrated.

  6. Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films

    Directory of Open Access Journals (Sweden)

    Jörg Haeberle

    2013-11-01

    Full Text Available We report on results on the preparation of thin (2O3 films on silicon substrates using thermal atomic layer deposition (T-ALD and plasma enhanced atomic layer deposition (PE-ALD in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt and 200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate over 4” wafers and correlate them to X-ray photoelectron spectroscopy (XPS results. The 200 °C T-ALD and PE-ALD processes yield films with similar refractive indices and with oxygen to aluminum elemental ratios very close to the stoichiometric value of 1.5. However, in both also fragments of the precursor are integrated into the film. The PE-ALD films show an increased growth rate and lower carbon contaminations. Reducing the deposition temperature down to rt leads to a higher content of carbon and CH-species. We also find a decrease of the refractive index and of the oxygen to aluminum elemental ratio as well as an increase of the growth rate whereas the homogeneity of the film growth is not influenced significantly. Initial state energy shifts in all PE-ALD samples are observed which we attribute to a net negative charge within the films.

  7. Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films.

    Science.gov (United States)

    Haeberle, Jörg; Henkel, Karsten; Gargouri, Hassan; Naumann, Franziska; Gruska, Bernd; Arens, Michael; Tallarida, Massimo; Schmeißer, Dieter

    2013-01-01

    We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt) and 200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4" wafers and correlate them to X-ray photoelectron spectroscopy (XPS) results. The 200 °C T-ALD and PE-ALD processes yield films with similar refractive indices and with oxygen to aluminum elemental ratios very close to the stoichiometric value of 1.5. However, in both also fragments of the precursor are integrated into the film. The PE-ALD films show an increased growth rate and lower carbon contaminations. Reducing the deposition temperature down to rt leads to a higher content of carbon and CH-species. We also find a decrease of the refractive index and of the oxygen to aluminum elemental ratio as well as an increase of the growth rate whereas the homogeneity of the film growth is not influenced significantly. Initial state energy shifts in all PE-ALD samples are observed which we attribute to a net negative charge within the films.

  8. Thermal and plasma enhanced atomic layer deposition of TiO{sub 2}: Comparison of spectroscopic and electric properties

    Energy Technology Data Exchange (ETDEWEB)

    Das, Chittaranjan, E-mail: chittaiit@yahoo.com; Henkel, Karsten; Tallarida, Massimo; Schmeißer, Dieter [Brandenburg University of Technology Cottbus-Senftenberg, Applied Physics and Sensors, K.-Wachsmann-Allee 17, D-03046 Cottbus (Germany); Gargouri, Hassan; Kärkkänen, Irina; Schneidewind, Jessica; Gruska, Bernd; Arens, Michael [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)

    2015-01-15

    Titanium oxide (TiO{sub 2}) deposited by atomic layer deposition (ALD) is used as a protective layer in photocatalytic water splitting system as well as a dielectric in resistive memory switching. The way ALD is performed (thermally or plasma-assisted) may change the growth rate as well as the electronic properties of the deposited films. In the present work, the authors verify the influence of the ALD mode on functional parameters, by comparing the growth rate and electronic properties of TiO{sub 2} films deposited by thermal (T-) and plasma-enhanced (PE-) ALD. The authors complete the study with the electrical characterization of selected samples by means of capacitance–voltage and current–voltage measurements. In all samples, the authors found a significant presence of Ti{sup 3+} states, with the lowest content in the PE-ALD grown TiO{sub 2} films. The observation of Ti{sup 3+} states was accompanied by the presence of in-gap states above the valence band maximum. For films thinner than 10 nm, the authors found also a strong leakage current. Also in this case, the PE-ALD films showed the weakest leakage currents, showing a correlation between the presence of Ti{sup 3+} states and leakage current density.

  9. Room temperature plasma enhanced atomic layer deposition for TiO{sub 2} and WO{sub 3} films

    Energy Technology Data Exchange (ETDEWEB)

    Strobel, Alexander; Schnabel, Hans-Dieter, E-mail: Hans.Dieter.Schnabel@fh-zwickau.de; Reinhold, Ullrich; Rauer, Sebastian; Neidhardt, Andreas [Department of Physical Engineering and Informatics, University of Applied Science, Westsächsische Hochschule Zwickau, Dr.-Friedrichs-Ring 2a, 08056 Zwíckau (Germany)

    2016-01-15

    This paper presents a study on plasma enhanced atomic layer deposition (ALD) of TiO{sub 2} and WO{sub 3} films on silicon substrates. At low temperatures, ALD processes, which are not feasible at high temperatures, could be possible. For example, temperatures at 180 °C and above allow no WO{sub 3} ALD process with WF{sub 6} as a precursor because etching processes hinder film growth. Further low temperature deposition techniques are needed to coat temperature sensitive materials. For the deposition, WF{sub 6} and TiCl{sub 4} are used as metal precursors and O{sub 2} and H{sub 2}O as oxygen sources. The depositions were accomplished in the temperature range of 30 °C up to 180 °C for both metal oxides. Spectroscopic ellipsometry, x-ray reflection, and grazing incidence diffraction were used to investigate the deposited ALD thin films. Film growth, density, crystallinity, and roughness are discussed as functions of temperature after ensuring the ALD requirement of self-saturating adsorption. Growth rates and measured material properties are in good agreement with literature data.

  10. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Science.gov (United States)

    Provine, J.; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin; Kim, Ki-Hyun; Prinz, Fritz B.

    2016-06-01

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiNx and evaluate the film's WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  11. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Provine, J., E-mail: jprovine@stanford.edu; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Kim, Ki-Hyun [Manufacturing Technology Center, Samsung Electronics, Suwon, Gyeonggi-Do (Korea, Republic of); Prinz, Fritz B. [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

    2016-06-15

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiN{sub x}), particularly for use a low k dielectric spacer. One of the key material properties needed for SiN{sub x} films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiN{sub x} and evaluate the film’s WER in 100:1 dilutions of HF in H{sub 2}O. The remote plasma capability available in PEALD, enabled controlling the density of the SiN{sub x} film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiN{sub x} of 6.1 Å/min, which is similar to WER of SiN{sub x} from LPCVD reactions at 850 °C.

  12. Catalyst-free growth and tailoring morphology of zinc oxide nanostructures by plasma-enhanced deposition at low temperature

    Science.gov (United States)

    Chen, W. Z.; Wang, B. B.; Qu, Y. Z.; Huang, X.; Ostrikov, K.; Levchenko, I.; Xu, S.; Cheng, Q. J.

    2017-03-01

    ZnO nanostructures were grown under different deposition conditions from Zn films pre-deposited onto Si substrates in O2-Ar plasma, ignited in an advanced custom-designed plasma-enhanced horizontal tube furnace deposition system. The morphology and structure of the synthesized ZnO nanostructures were systematically and extensively investigated by scanning and transmission electron microscopy, Raman spectroscopy, and atomic force microscopy. It is shown that the morphology of ZnO nanostructures changes from the hybrid ZnO/nanoparticle and nanorod system to the mixture of ZnO nanosheets and nanorods when the growth temperature increases, and the density of ZnO nanorods increases with the increase of oxygen flow rate. The formation of ZnO nanostructures was explained in terms of motion of Zn atoms on the Zn nanoparticle surfaces, and to the local melting of Zn nanoparticles or nanosheets. Moreover, the photoluminescence properties of ZnO nanostructures were studied, and it was revealed that the photoluminescence spectrum features two strong ultraviolet bands at about 378 and 399 nm and a series of weak blue bands within a range of 440-484 nm, related to the emissions of free excitons, near-band edge, and defects of ZnO nanostructures. The obtained results enrich our knowledge on the synthesis of ZnO-based nanostructures and contribute to the development of ZnO-based optoelectronic devices.

  13. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Directory of Open Access Journals (Sweden)

    J. Provine

    2016-06-01

    Full Text Available The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD of silicon nitride (SiNx, particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER in hydrofluoric (HF acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD of SiNx and evaluate the film’s WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  14. Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

    Energy Technology Data Exchange (ETDEWEB)

    Suh, Sungin; Kim, Jun-Rae; Kim, Seongkyung; Hwang, Cheol Seong; Kim, Hyeong Joon, E-mail: thinfilm@snu.ac.kr [Department of Materials Science and Engineering with Inter-University Semiconductor Research Center (ISRC), Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 08826 (Korea, Republic of); Ryu, Seung Wook, E-mail: tazryu78@gmail.com [Department of Electrical Engineering, Stanford University, Stanford, California 94305-2311 (United States); Cho, Seongjae [Department of Electronic Engineering and New Technology Component & Material Research Center (NCMRC), Gachon University, Seongnam-si, Gyeonggi-do 13120 (Korea, Republic of)

    2016-01-15

    It has not been an easy task to deposit SiN at low temperature by conventional plasma-enhanced atomic layer deposition (PE-ALD) since Si organic precursors generally have high activation energy for adsorption of the Si atoms on the Si-N networks. In this work, in order to achieve successful deposition of SiN film at low temperature, the plasma processing steps in the PE-ALD have been modified for easier activation of Si precursors. In this modification, the efficiency of chemisorption of Si precursor has been improved by additional plasma steps after purging of the Si precursor. As the result, the SiN films prepared by the modified PE-ALD processes demonstrated higher purity of Si and N atoms with unwanted impurities such as C and O having below 10 at. % and Si-rich films could be formed consequently. Also, a very high step coverage ratio of 97% was obtained. Furthermore, the process-optimized SiN film showed a permissible charge-trapping capability with a wide memory window of 3.1 V when a capacitor structure was fabricated and measured with an insertion of the SiN film as the charge-trap layer. The modified PE-ALD process using the activated Si precursor would be one of the most practical and promising solutions for SiN deposition with lower thermal budget and higher cost-effectiveness.

  15. Using your microwave oven. Lesson 6, Microwave oven management

    OpenAIRE

    Woodard, Janice Emelie, 1929-

    1984-01-01

    Discusses cooking and reheating foods in microwave ovens, and adapting conventional recipes for the microwave. Revised Includes the publication: Adapting conventional recipes to microwave cooking : fact sheet 84 by Janice Woodard, Rebecca Lovingood, R.H. Trice.

  16. Using your microwave oven. Lesson 6, Microwave oven management

    OpenAIRE

    Woodard, Janice Emelie, 1929-

    1984-01-01

    Discusses cooking and reheating foods in microwave ovens, and adapting conventional recipes for the microwave. Revised Includes the publication: Adapting conventional recipes to microwave cooking : fact sheet 84 by Janice Woodard, Rebecca Lovingood, R.H. Trice.

  17. Synthesis and annealing effects on the properties of nanostructured Ti–Al–V–N coatings deposited by plasma enhanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Abd El-Rahman, A.M., E-mail: ahmedphys96@hotmail.com [Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt); Mechanical and Materials Engineering Division, Southwest Research Institute, 6220 Culebra Road, San Antonio, TX 78238 (United States)

    2015-01-15

    In the present study, Ti–Al–V–N coatings were synthesized onto Ti–6Al–4V substrates by plasma enhanced magnetron sputtering (PEMS) of two commercial sputter targets of Ti–6Al–4V in an Ar/N{sub 2} gas mixture. After that, the as-synthesized coatings were annealed in air atmosphere at temperature ranging from 500 °C to 900 °C. The as-synthesized and annealed coatings were characterized by X-ray diffraction, Vickers microhardness tester, ball-on-disk tribometer and potentiodynamic polarization tests. The as-synthesized coatings showed a surface hardness of about 2980 ± 80 HV{sub 0.3} and a friction coefficient of 0.36. It has been revealed with the increase of annealing temperature; the microhardness was gradually decreased and reached a minimum value of 1030 ± 30 HV{sub 0.3} at 900 °C. The coefficient of friction has a minimum value of 0.27 for coatings annealed at 600 °C. Potentiodynamic polarization test confirmed that thermally annealed samples (≤600 °C) exhibit a better corrosion performance compared to that of the as-synthesized one. However, at relatively higher annealing temperature (700–900 °C), a small degradation in the corrosion performance was observed with the formation of oxidized phases. Finally, the variation in the mechanical and tribological properties of this coating with annealing temperatures is attributed to changes in microstructure and chemical nature of the surface layer. - Highlights: • Ti–Al–V–N coating was synthesized using PEMS and annealed in air atmosphere. • The microstructural, mechanical and tribological properties were evaluated. • The as-synthesized coating showed surface hardness of about 30 GPa. • Grain size and microstrain were obtained from microstructural data. • The annealed samples (≤600 °C) exhibit good thermal stability and better corrosion performance.

  18. Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride

    Science.gov (United States)

    Yang, Jialing; Eller, Brianna S.; Nemanich, Robert J.

    2014-09-01

    The effects of surface pretreatment, dielectric growth, and post deposition annealing on interface electronic structure and polarization charge compensation of Ga- and N-face bulk GaN were investigated. The cleaning process consisted of an ex-situ wet chemical NH4OH treatment and an in-situ elevated temperature NH3 plasma process to remove carbon contamination, reduce oxygen coverage, and potentially passivate N-vacancy related defects. After the cleaning process, carbon contamination decreased below the x-ray photoemission spectroscopy detection limit, and the oxygen coverage stabilized at ˜1 monolayer on both Ga- and N-face GaN. In addition, Ga- and N-face GaN had an upward band bending of 0.8 ± 0.1 eV and 0.6 ± 0.1 eV, respectively, which suggested the net charge of the surface states and polarization bound charge was similar on Ga- and N-face GaN. Furthermore, three dielectrics (HfO2, Al2O3, and SiO2) were prepared by plasma-enhanced atomic layer deposition on Ga- or N-face GaN and annealed in N2 ambient to investigate the effect of the polarization charge on the interface electronic structure and band offsets. The respective valence band offsets of HfO2, Al2O3, and SiO2 with respect to Ga- and N-face GaN were 1.4 ± 0.1, 2.0 ± 0.1, and 3.2 ± 0.1 eV, regardless of dielectric thickness. The corresponding conduction band offsets were 1.0 ± 0.1, 1.3 ± 0.1, and 2.3 ± 0.1 eV, respectively. Experimental band offset results were consistent with theoretical calculations based on the charge neutrality level model. The trend of band offsets for dielectric/GaN interfaces was related to the band gap and/or the electronic part of the dielectric constant. The effect of polarization charge on band offset was apparently screened by the dielectric-GaN interface states.

  19. Microwave and RF engineering

    CERN Document Server

    Sorrentino, Roberto

    2010-01-01

    An essential text for both students and professionals, combining detailed theory with clear practical guidance This outstanding book explores a large spectrum of topics within microwave and radio frequency (RF) engineering, encompassing electromagnetic theory, microwave circuits and components. It provides thorough descriptions of the most common microwave test instruments and advises on semiconductor device modelling. With examples taken from the authors' own experience, this book also covers:network and signal theory;electronic technology with guided electromagnetic pr

  20. Advanced microwave processing concepts

    Energy Technology Data Exchange (ETDEWEB)

    Lauf, R.J.; McMillan, A.D.; Paulauskas, F.L. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    The purpose of this work is to explore the feasibility of several advanced microwave processing concepts to develop new energy-efficient materials and processes. The project includes two tasks: (1) commercialization of the variable-frequency microwave furnace; and (2) microwave curing of polymeric materials. The variable frequency microwave furnace, whose initial conception and design was funded by the AIM Materials Program, allows the authors, for the first time, to conduct microwave processing studies over a wide frequency range. This novel design uses a high-power traveling wave tube (TWT) originally developed for electronic warfare. By using this microwave source, one can not only select individual microwave frequencies for particular experiments, but also achieve uniform power densities over a large area by the superposition of many different frequencies. Microwave curing of various thermoset resins will be studied because it holds the potential of in-situ curing of continuous-fiber composites for strong, lightweight components or in-situ curing of adhesives, including metal-to-metal. Microwave heating can shorten curing times, provided issues of scaleup, uniformity, and thermal management can be adequately addressed.

  1. Advanced microwave processing concepts

    Energy Technology Data Exchange (ETDEWEB)

    Lauf, R.J.; McMillan, A.D.; Paulauskas, F.L. [Oak Ridge National Laboratory, TN (United States)

    1995-05-01

    The purpose of this work is to explore the feasibility of several advanced microwave processing concepts to develop new energy-efficient materials and processes. The project includes two tasks: (1) commercialization of the variable-frequency microwave furnace; and (2) microwave curing of polymer composites. The variable frequency microwave furnace, whose initial conception and design was funded by the AIC Materials Program, will allow us, for the first time, to conduct microwave processing studies over a wide frequency range. This novel design uses a high-power traveling wave tube (TWT) originally developed for electronic warfare. By using this microwave source, one can not only select individual microwave frequencies for particular experiments, but also achieve uniform power densities over a large area by the superposition of many different frequencies. Microwave curing of thermoset resins will be studied because it hold the potential of in-situ curing of continuous-fiber composites for strong, lightweight components. Microwave heating can shorten curing times, provided issues of scaleup, uniformity, and thermal management can be adequately addressed.

  2. Advances in microwaves 3

    CERN Document Server

    Young, Leo

    2013-01-01

    Advances in Microwaves, Volume 3 covers the advances and applications of microwave signal transmission and Gunn devices. This volume contains six chapters and begins with descriptions of ground-station antennas for space communications. The succeeding chapters deal with beam waveguides, which offer interesting possibilities for transmitting microwave energy, as well as with parallel or tubular beams from antenna apertures. A chapter discusses the electron transfer mechanism and the velocity-field characteristics, with a particular emphasis on the microwave properties of Gunn oscillators. The l

  3. New prospects in pretreatment of cotton fabrics using microwave heating.

    Science.gov (United States)

    Hashem, M; Taleb, M Abou; El-Shall, F N; Haggag, K

    2014-03-15

    As microwaves are known to give fast and rapid volume heating, the present study is undertaken to investigate the use of microwave heating for pretreatment cotton fabrics to reduce the pretreatment time, chemicals and water. The onset of the microwave heating technique on the physicochemical and performance properties of desized, scoured and bleached cotton fabric is elucidated and compared with those obtained on using conventional thermal heating. Combined one-step process for desizing, scouring and bleaching of cotton fabric under microwave heating was also investigated. The dual effect of adding urea, (as microwave absorber and hydrogen peroxide activator) has been exploiting to accelerate the pretreatment reaction of cotton fabric. DSC, FT-IR and SEM have been used to investigate the onset of microwave on the morphological and chemical change of cotton cellulose after pretreatment and bleaching under microwave heating. Results obtained show that, a complete fabric preparation was obtained in just 5 min on using microwave in pretreatments process and the fabric properties were comparable to those obtained in traditional pretreatment process which requires 2.5-3h for completion.

  4. Artificial color perception using microwaves

    CERN Document Server

    Choudhury, Debesh

    2013-01-01

    We report the feasibility of artificial color perception under microwave illumination using a standard microwave source and an antenna. We have sensed transmitted microwave power through color objects and have distinguished the colors by analyzing the sensed transmitted power. Experiments are carried out using a Gunn diode as the microwave source, some colored liquids as the objects and a microwave diode as the detector. Results are presented which open up an unusual but new way of perceiving colors using microwaves.

  5. A Review of Microwave-Assisted Reactions for Biodiesel Production

    Science.gov (United States)

    Nomanbhay, Saifuddin; Ong, Mei Yin

    2017-01-01

    The conversion of biomass into chemicals and biofuels is an active research area as trends move to replace fossil fuels with renewable resources due to society’s increased concern towards sustainability. In this context, microwave processing has emerged as a tool in organic synthesis and plays an important role in developing a more sustainable world. Integration of processing methods with microwave irradiation has resulted in a great reduction in the time required for many processes, while the reaction efficiencies have been increased markedly. Microwave processing produces a higher yield with a cleaner profile in comparison to other methods. The microwave processing is reported to be a better heating method than the conventional methods due to its unique thermal and non-thermal effects. This paper provides an insight into the theoretical aspects of microwave irradiation practices and highlights the importance of microwave processing. The potential of the microwave technology to accomplish superior outcomes over the conventional methods in biodiesel production is presented. A green process for biodiesel production using a non-catalytic method is still new and very costly because of the supercritical condition requirement. Hence, non-catalytic biodiesel conversion under ambient pressure using microwave technology must be developed, as the energy utilization for microwave-based biodiesel synthesis is reported to be lower and cost-effective. PMID:28952536

  6. Microwave heating and the acceleration of polymerization processes

    Science.gov (United States)

    Parodi, Fabrizio

    1999-12-01

    Microwave power irradiation of dielectrics is nowadays well recognized and extensively used as an exceptionally efficient and versatile heating technique. Besides this, it revealed since the early 1980s an unexpected, and still far from being elucidated, capacity of causing reaction and yield enhancements in a great variety of chemical processes. These phenomena are currently referred to as specific or nonthermal effects of microwaves. An overview of them and their interpretations given to date in achievements in the microwave processing of slow-curing thermosetting resins is also given. Tailored, quaternary cyanoalkoxyalkyl ammonium halide catalysts, further emphasizing the microwave enhancements of curing kinetics of isocyanate/epoxy and epoxy/anhydride resin systems, are here presented. Their catalytic efficiency under microwave irradiation, microwave heatability, and dielectric properties are discussed and interpreted by the aid of the result of semi-empirical quantum mechanics calculations and molecule dynamics simulations in vacuo. An ion-hopping conduction mechanism has been recognized as the dominant source of the microwave absorption capacities of these catalysts. Dipolar relaxation losses by their strongly dipolar cations, viceversa, would preferably be responsible for the peculiar catalytic effects displayed under microwave heating. This would occur through a well-focused, molecular microwave overheating of intermediate reactive anionic groupings, they could indirectly cause as the nearest neighbors of such negatively-charged molecular sites.

  7. Microwave joining of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Silberglitt, R.; Ahmad, I.; Tian, Y.L. [FM Technologies, Inc., Fairfax, VA (United States)] [and others

    1997-04-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on identification of the most effective joining methods for scale-up to large tube assemblies, including joining using SiC produced in situ from chemical precursors. During FY 1996, a new microwave applicator was designed, fabricated and tested that provides the capability for vacuum baking of the specimens and insulation and for processing under inert environment. This applicator was used to join continuous fiber-reinforced (CFCC) SiC/SiC composites using a polymer precursor to form a SiC interlayer in situ.

  8. Microwave dielectric properties of nanostructured nickel ferrite

    Indian Academy of Sciences (India)

    John Jacob; M Abdul Khadar; Anil Lonappan; K T Mathew

    2008-11-01

    Nickel ferrite is one of the important ferrites used in microwave devices. In the present work, we have synthesized nanoparticles of nickel ferrite using chemical precipitation technique. The crystal structure and grain size of the particles are studied using XRD. The microwave dielectric properties of nanostructured nickel ferrite samples of three different average grain sizes and those of two sintered samples were studied. The parameters like dielectric constant, dielectric loss and heating coefficient of the nanoparticles samples are studied in the frequency range from 2.4 to 4 GHz. The values of these parameters are compared with those of sintered pellets of the same samples. All these parameters show size dependent variations.

  9. NOVEL MICROWAVE FILTER DESIGN TECHNIQUES.

    Science.gov (United States)

    ELECTROMAGNETIC WAVE FILTERS, MICROWAVE FREQUENCY, PHASE SHIFT CIRCUITS, BANDPASS FILTERS, TUNED CIRCUITS, NETWORKS, IMPEDANCE MATCHING , LOW PASS FILTERS, MULTIPLEXING, MICROWAVE EQUIPMENT, WAVEGUIDE FILTERS, WAVEGUIDE COUPLERS.

  10. Use of Plasma Enhanced ALD to Construct Efficient Interference Filters for Astronomy in the FUV - Year 2 Update

    Science.gov (United States)

    Scowen, Paul A.; Nemanich, Robert; Eller, Brianna; Yu, Hongbin; Mooney, Tom; Beasley, Matt

    2017-01-01

    Over the past few years the advent of atomic layer deposition (ALD) technology has opened new capabilities to the field of coatings deposition for use in optical elements. At the same time, there have been major advances in both optical designs and detector technologies that can provide orders of magnitude improvement in throughput in the far ultraviolet (FUV) and near ultraviolet (NUV) passbands. Recent review work has shown that a veritable revolution is about to happen in astronomical diagnostic work for targets ranging from protostellar and protoplanetary systems, to the intergalactic medium that feeds gas supplies for galactic star formation, and supernovae and hot gas from star forming regions that determine galaxy formation feedback. These diagnostics are rooted in access to a forest of emission and absorption lines in the ultraviolet (UV), and all that prevents this advance is the lack of throughput in such systems, even in space-based conditions. We are pursuing an approach to use a range of materials to implement stable optical layers suitable for protective overcoats with high UV reflectivity and unprecedented uniformity, and to use that capability to leverage innovative ultraviolet/optical filter construction to enable astronomical science. These materials will be deposited in a multilayer format over a metal base to produce a stable construct. Specifically, we are employing PEALD (plasma-enhanced atomic layer deposition) methods for the deposition and construction of reflective layers that can be used to construct unprecedented filter designs for use in the ultraviolet. Our paper reports on our work as we enter year 2 of our 3-year program.

  11. Spectroscopic study of low pressure, low temperature H2-CH4-CO2 microwave plasmas used for large area deposition of nanocrystalline diamond films. Part II: on plasma chemical processes

    Science.gov (United States)

    Nave, A. S. C.; Baudrillart, B.; Hamann, S.; Bénédic, F.; Lombardi, G.; Gicquel, A.; van Helden, J. H.; Röpcke, J.

    2016-12-01

    In a distributed antenna array (DAA) reactor, microwave H2 plasmas with admixtures of 2.5% CH4 and 1% CO2 used for the deposition of nanocrystalline diamond films have been studied by infrared laser absorption and optical emission spectroscopy (OES) techniques. The experiments were carried out in order to analyze the dependence of plasma chemical phenomena on power and pressure at relatively low pressures, up to 0.55 mbar, and power values, up to 3 kW. The evolution of the concentration of the methyl radical, CH3, of five stable molecules, CH4, CO2, CO, C2H2 and C2H6, and of vibrationally excited CO in the first and second hot band was monitored in the plasma processes by in situ infrared laser absorption spectroscopy using tunable lead salt diode lasers (TDL) and an external-cavity quantum cascade laser (EC-QCL) as radiation sources. OES was applied simultaneously to obtain complementary information about the degree of dissociation of the H2 precursor and of its gas temperature. The experimental results are presented in two separate parts. In Part I, the first paper in a two-part series, the measurement of the gas (T gas), rotational (T rot) and vibrational (T vib) temperatures of the various species in the complex plasma was the main focus of interest. Depending on the different plasma zones the gas temperature was found to range between about 360 and 1000 K inside the DAA reactor (Nave et al 2016 Plasma Sources Sci. Technol. 25 065002). In Part II, the present paper, taking into account the temperatures determined in the first paper, the concentrations of the various species, which were found to be in a range between 1011 and 1015 cm-3, are the focus of interest. The influence of the discharge parameters power and pressure on the molecular concentrations has been studied. To achieve further insight into general plasma chemical aspects the dissociation of the carbon precursor gases including their fragmentation and conversion to the reaction products has been

  12. The Cosmic Microwave Background

    OpenAIRE

    Silk, Joseph

    2002-01-01

    This set of lectures provides an overview of the basic theory and phenomenology of the cosmic microwave background. Topics include a brief historical review; the physics of temperature and polarization fluctuations; acoustic oscillations of the primordial plasma; the space of inflationary cosmological models; current and potential constraints on these models from the microwave background; and constraints on inflation.

  13. Characterization method of dielectric properties of free falling drops in a microwave processing cavity and its application in microwave internal gelation

    Science.gov (United States)

    Cabanes-Sempere, M.; Catalá-Civera, J. M.; Peñaranda-Foix, F. L.; Cozzo, C.; Vaucher, S.; Pouchon, M. A.

    2013-09-01

    Microwave internal gelation (MIG) is a chemical process proposed for the production of nuclear particle fuel. The internal gelation reaction is triggered by a temperature increase of aqueous droplets falling by gravity by means of non-contact microwave heating. Due to the short residence time of a solution droplet in a microwave heating cavity, a detailed knowledge of the interaction between microwaves and chemical solution (shaped in small drops) is required. This paper describes a procedure that enables the measurement of the dielectric properties of aqueous droplets that freely fall through a microwave cavity. These measurements provide the information to determine the optimal values of the parameters (such as frequency and power) that dictate the heating of such a material under microwaves.

  14. The microwave absorption of ceramic-cup microwave ion source

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    An experiment system of ceramic-cup microwave ion source has been built here. Its microwave absorption efficiency as a function of the magnetic field and the pressure is presented. When the microwave incident power is 300~500W the microwave absorption efficiencies are more than 90% if the system is optimized and the magnetic field at the microwave window is 0.095T.

  15. Progress of the technique of coal microwave desulfurization

    Institute of Scientific and Technical Information of China (English)

    Xiuxiang Tao; Ning Xu; Maohua Xie; Longfei Tang

    2014-01-01

    With the advantages of its fast speed, effective and moderate controllable conditions, desulfurization of coal by microwave has become research focus in the field of clean coal technology. Coal is a homogeneous mixture which consists of various components with different dielectric properties, so their abilities to absorb microwaves are different, and the sulfur-containing components are better absorbers of microwave, which makes them can be selectively heated and reacted under microwave irradiation. There still remain controversies on the principle of microwave desulfurization at present, thermal effects or non-thermal effects. The point of thermal effects of microwave is mainly base on its characters of rapidly and selectly heating. While, in view of non-thermal effect, direct interactions between the microwave electromagnetic field and sulfur containing components are proposed. It is a fundamental problem to determine the dielectric properties of coal and the sulfur-containing components to reveal the interaction of microwave and sulfur-containing compounds. However, the test of dielectric property of coal is affected by many factors, which makes it difficult to measure dielectric properties accurately. In order to achieve better desulfurization effect, the researchers employ methods of adding chemical additives such as acid, alkali, oxidant, reductant, or changing the reaction atmosphere, or combining with other methods such as magnetic separation, ultrasonic and microorganism. Researchers in this field have also put forward several processes, and have obtained a number of patents. Obscurity of microwave desulfurization mechanism, uncertainties in qualitative and quantitative analysis of sulfur-containing functional groups in coal, and the lack of special microwave equipment have limited further development of microwave desulfurization technology.

  16. Gold Nanoparticle Microwave Synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Krantz, Kelsie E. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Christian, Jonathan H. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Coopersmith, Kaitlin [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Washington, II, Aaron L. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Murph, Simona H. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

    2016-07-27

    At the nanometer scale, numerous compounds display different properties than those found in bulk material that can prove useful in areas such as medicinal chemistry. Gold nanoparticles, for example, display promise in newly developed hyperthermia therapies for cancer treatment. Currently, gold nanoparticle synthesis is performed via the hot injection technique which has large variability in final particle size and a longer reaction time. One underdeveloped area by which these particles could be produced is through microwave synthesis. To initiate heating, microwaves agitate polar molecules creating a vibration that gives off the heat energy needed. Previous studies have used microwaves for gold nanoparticle synthesis; however, polar solvents were used that partially absorbed incident microwaves, leading to partial thermal heating of the sample rather than taking full advantage of the microwave to solely heat the gold nanoparticle precursors in a non-polar solution. Through this project, microwaves were utilized as the sole heat source, and non-polar solvents were used to explore the effects of microwave heating only as pertains to the precursor material. Our findings show that the use of non-polar solvents allows for more rapid heating as compared to polar solvents, and a reduction in reaction time from 10 minutes to 1 minute; this maximizes the efficiency of the reaction, and allows for reproducibility in the size/shape of the fabricated nanoparticles.

  17. Gold Nanoparticle Microwave Synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Krantz, Kelsie E. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Christian, Jonathan H. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Coopersmith, Kaitlin [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Washington, II, Aaron L. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Murph, Simona H. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

    2016-07-27

    At the nanometer scale, numerous compounds display different properties than those found in bulk material that can prove useful in areas such as medicinal chemistry. Gold nanoparticles, for example, display promise in newly developed hyperthermia therapies for cancer treatment. Currently, gold nanoparticle synthesis is performed via the hot injection technique which has large variability in final particle size and a longer reaction time. One underdeveloped area by which these particles could be produced is through microwave synthesis. To initiate heating, microwaves agitate polar molecules creating a vibration that gives off the heat energy needed. Previous studies have used microwaves for gold nanoparticle synthesis; however polar solvents were used that partially absorbed incident microwaves, leading to partial thermal heating of the sample rather than taking full advantage of the microwave to solely heat the gold nanoparticle precursors in a non-polar solution. Through this project, microwaves were utilized as the sole heat source, and non-polar solvents were used to explore the effects of microwave heating only as pertains to the precursor material. Our findings show that the use of non-polar solvents allows for more rapid heating as compared to polar solvents, a reduction in reaction time from 10 minutes to 1 minute, maximizes the efficiency of the reaction, and allows for reproducibility in the size/shape of the fabricated nanoparticles.

  18. Variable Power, Short Microwave Pulses Generation using a CW Magnetron

    Directory of Open Access Journals (Sweden)

    CIUPA, R.

    2011-05-01

    Full Text Available Fine control of microwave power radiation in medical and scientific applications is a challenging task. Since a commercial Continuous Wave (CW magnetron is the most inexpensive microwave device available today on the market, it becomes the best candidate for a microwave power generator used in medical diathermy and hyperthermia treatments or high efficiency chemical reactions using microwave reactors as well. This article presents a new method for driving a CW magnetron with short pulses, using a modified commercial Zero Voltage Switching (ZVS inverter, software driven by a custom embedded system. The microwave power generator designed with this method can be programmed for output microwave pulses down to 1% of the magnetron's power and allows microwave low frequency pulse modulation in the range of human brain electrical activity, intended for medical applications. Microwave output power continuous control is also possible with the magnetron running in the oscillating area, using a dual frequency Pulse Width Modulation (PWM, where the low frequency PWM pulse is modulating a higher resonant frequency required by the ZVS inverter's transformer. The method presented allows a continuous control of both power and energy (duty-cycle at the inverter's output.

  19. The Gravimetric Analysis of Nickel Using a Microwave Oven

    Science.gov (United States)

    Carmosini, Nadia; Ghoreshy, Sanaz; Koether, Marina C.

    1997-08-01

    The procedure for the gravimetric quantitative analysis of the percent of nickel in steel has been modified to include the use of a microwave oven. Experiments performed with the microwave oven gave an average recovery of 99.9+0.3% whereas the conventional method gave a value of 99.5+0.6%. The Ni(DMG)2 samples, which were digested and dried in the microwave oven, showed no physical difference indicating that there was no chemical modification of the precipitate due to the microwave radiation. The microwave oven proved to be very useful for time efficiency, not only for the digestion and heating of the steel ore, but also for the drying of the ore, the crucibles, and the Ni(DMG)2 precipitate. The most significant advantages occur with the cooling time. However, it is not suggested that the entire experiment be performed with the microwave since constant attention, which is required with the microwave drying method, is not necessary for the conventional oven method. Therefore, in order to be more time effective, thought should be given as to which part of the method should be performed with the microwave and which should be performed with the conventional oven.

  20. Microwave and RF assisted chemical vapor infiltration

    Energy Technology Data Exchange (ETDEWEB)

    Devlin, D.J.; Barbero, R.S. [Los Alamos National Laboratory, NM (United States)

    1995-05-01

    Work during this reporting period has focused on the development of a CVI technique for rapid production of carbon/carbon and alumina composite systems. The focus of the alumina effort is towards porous materials for membrane supports and hot gas filtration. Industrial interest in these applications include companies such as: Dow, Westinghouse, Amoco and DuPont. Applications for the carbon materials are numerous and include: brakes, sporting goods, biomedical materials, flaps and seals for thrust control, after burner nozzles, turbine engine flaps and rotors. This effort will focus on aircraft brakes. A collaboration is underway with Hitco a major producer of carbon/carbon materials.

  1. Artificial color perception using microwaves

    OpenAIRE

    Choudhury, Debesh; Caulfield, H. John

    2013-01-01

    We report the feasibility of artificial color perception under microwave illumination using a standard microwave source and an antenna. We have sensed transmitted microwave power through color objects and have distinguished the colors by analyzing the sensed transmitted power. Experiments are carried out using a Gunn diode as the microwave source, some colored liquids as the objects and a microwave diode as the detector. Results are presented which open up an unusual but new way of perceiving...

  2. Optical emission spectrometric determination of arsenic and antimony by continuous flow chemical hydride generation and a miniaturized microwave microstrip argon plasma operated inside a capillary channel in a sapphire wafer

    Energy Technology Data Exchange (ETDEWEB)

    Pohl, Pawel; Zapata, Israel Jimenez; Bings, Nicolas H. [Universitaet Hamburg, Institut fuer Anorganische und Angewandte Chemie, Martin-Luther-King-Platz 6, D-20146 Hamburg (Germany); Voges, Edgar [Universitaet Dortmund, Fakultaet fuer Elektrotechnik und Informationstechnik, Friedrich-Woehler-Weg 4, D-44221 Dortmund (Germany); Broekaert, Jose A.C. [Universitaet Hamburg, Institut fuer Anorganische und Angewandte Chemie, Martin-Luther-King-Platz 6, D-20146 Hamburg (Germany)], E-mail: jose.broekaert@chemie.uni-hamburg.de

    2007-05-15

    Continuous flow chemical hydride generation coupled directly to a 40 W, atmospheric pressure, 2.45 GHz microwave microstrip Ar plasma operated inside a capillary channel in a sapphire wafer has been optimized for the emission spectrometric determination of As and Sb. The effect of the NaBH{sub 4} concentration, the concentration of HCl, HNO{sub 3} and H{sub 2}SO{sub 4} used for sample acidification, the Ar flow rate, the reagent flow rates, the liquid volume in the separator as well as the presence of interfering metals such as Fe, Cu, Ni, Co, Zn, Cd, Mn, Pb and Cr, was investigated in detail. A considerable influence of Fe(III) (enhancement of up to 50 %) for As(V) and of Fe(III), Cu(II) and Cr(III) (suppression of up to 75%) as well as of Cd(II) and Mn(II) (suppression by up to 25%) for Sb(III) was found to occur, which did not change by more than a factor of 2 in the concentration range of 2-20 {mu}g ml{sup -1}. The microstrip plasma tolerated the introduction of 4.2 ml min{sup -1} of H{sub 2} in the Ar working gas, which corresponded to an H{sub 2}/Ar ratio of 28%. Under these conditions, the excitation temperature as measured with Ar atom lines and the electron number density as determined from the Stark broadening of the H{sub {beta}} line was of the order of 5500 K and 1.50 . 10{sup 14} cm{sup -3}, respectively. Detection limits (3{sigma}) of 18 ng ml{sup -1} for As and 31 ng ml{sup -1} for Sb were found and the calibration curves were linear over 2 orders of magnitude. With the procedure developed As and Sb could be determined at the 45 and 6.4 {mu}g ml{sup -1} level in a galvanic bath solution containing 2.5% of NiSO{sub 4}. Additionally, As was determined in a coal fly ash reference material (NIST SRM 1633a) with a certified concentration of As of 145 {+-} 15 {mu}g g{sup -1} and a value of 144 {+-} 4 {mu}g g{sup -1} was found.

  3. Advances in microwaves 4

    CERN Document Server

    Young, Leo

    2013-01-01

    Advances in Microwaves, Volume 4 covers some innovations in the devices and applications of microwaves. This volume contains three chapters and begins with a discussion of the application of microwave phasers and time delay elements as beam steering elements in array radars. The next chapter provides first an overview of the technical aspects and different types of millimeter waveguides, followed by a survey of their application to railroads. The last chapter examines the general mode of conversion properties of nonuniform waveguides, such as waveguide tapers, using converted Maxwell's equatio

  4. Integrated microwave photonics

    CERN Document Server

    Marpaung, David; Heideman, Rene; Leinse, Arne; Sales, Salvador; Capmany, Jose

    2012-01-01

    Microwave photonics (MWP) is an emerging field in which radio frequency (RF) signals are generated, distributed, processed and analyzed using the strength of photonic techniques. It is a technology that enables various functionalities which are not feasible to achieve only in the microwave domain. A particular aspect that recently gains significant interests is the use of photonic integrated circuit (PIC) technology in the MWP field for enhanced functionalities and robustness as well as the reduction of size, weight, cost and power consumption. This article reviews the recent advances in this emerging field which is dubbed as integrated microwave photonics. Key integrated MWP technologies are reviewed and the prospective of the field is discussed.

  5. Advances in microwaves

    CERN Document Server

    Young, Leo

    1967-01-01

    Advances in Microwaves, Volume 2 focuses on the developments in microwave solid-state devices and circuits. This volume contains six chapters that also describe the design and applications of diplexers and multiplexers. The first chapter deals with the parameters of the tunnel diode, oscillators, amplifiers and frequency converter, followed by a simple physical description and the basic operating principles of the solid state devices currently capable of generating coherent microwave power, including transistors, harmonic generators, and tunnel, avalanche transit time, and diodes. The next ch

  6. The Microwave Hall Effect

    OpenAIRE

    2015-01-01

    This paper describes a simple microwave apparatus to measure the Hall effect in semiconductor wafers. The advantage of this technique is that it does not require contacts on the sample or the use of a resonant cavity. Our method consists of placing the semiconductor wafer into a slot cut in an X-band (8 - 12 GHz) waveguide series tee, injecting microwave power into the two opposite arms of the tee, and measuring the microwave output at the third arm. A magnetic field applied perpendicular to ...

  7. Monolithic microwave integrated circuits

    Science.gov (United States)

    Pucel, R. A.

    Monolithic microwave integrated circuits (MMICs), a new microwave technology which is expected to exert a profound influence on microwave circuit designs for future military systems as well as for the commercial and consumer markets, is discussed. The book contains an historical discussion followed by a comprehensive review presenting the current status in the field. The general topics of the volume are: design considerations, materials and processing considerations, monolithic circuit applications, and CAD, measurement, and packaging techniques. All phases of MMIC technology are covered, from design to testing.

  8. A Comparative Study of Three Different Chemical Vapor Deposition Techniques of Carbon Nanotube Growth on Diamond Films

    Directory of Open Access Journals (Sweden)

    Betty T. Quinton

    2013-01-01

    Full Text Available This paper compares between the methods of growing carbon nanotubes (CNTs on diamond substrates and evaluates the quality of the CNTs and the interfacial strength. One potential application for these materials is a heat sink/spreader for high-power electronic devices. The CNTs and diamond substrates have a significantly higher specific thermal conductivity than traditional heat sink/spreader materials making them good replacement candidates. Only limited research has been performed on these CNT/diamond structures and their suitability of different growth methods. This study investigates three potential chemical vapor deposition (CVD techniques for growing CNTs on diamond: thermal CVD (T-CVD, microwave plasma-enhanced CVD (MPE-CVD, and floating catalyst thermal CVD (FCT-CVD. Scanning electron microscopy (SEM and high-resolution transmission electron microscopy (TEM were used to analyze the morphology and topology of the CNTs. Raman spectroscopy was used to assess the quality of the CNTs by determining the ID/IG peak intensity ratios. Additionally, the CNT/diamond samples were sonicated for qualitative comparisons of the durability of the CNT forests. T-CVD provided the largest diameter tubes, with catalysts residing mainly at the CNT/diamond interface. The MPE-CVD process yielded non uniform defective CNTs, and FCT-CVD resulted in the smallest diameter CNTs with catalyst particles imbedded throughout the length of the nanotubes.

  9. Low temperature plasma-enhanced ALD TiN ultrathin films for Hf{sub 0.5}Zr{sub 0.5}O{sub 2}-based ferroelectric MIM structures

    Energy Technology Data Exchange (ETDEWEB)

    Kozodaev, M.G.; Chernikova, A.G.; Markeev, A.M. [Moscow Institute of Physics and Technology, Institutsky Lane 9, Dolgoprudny, Moscow Region 141700 (Russian Federation); Lebedinskii, Y.Y. [Moscow Institute of Physics and Technology, Institutsky Lane 9, Dolgoprudny, Moscow Region 141700 (Russian Federation); National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoye Shosse 31, 115409 Moscow (Russian Federation); Polyakov, S.N. [Technological Institute for Superhard and Novel Carbon Materials, Tsentral' naya str. 7a, 142190, Troitsk, Moscow (Russian Federation)

    2017-06-15

    In this work chemical and electrical properties of TiN films, grown by low temperature plasma-enhanced atomic layer deposition (PE-ALD) process from TiCl{sub 4} and NH{sub 3}, were investigated. Electrical resistivity as low as 250 μOhm x cm, as well as the lowest Cl impurity content, was achieved at 320 C. Full-ALD Hf{sub 0.5}Zr{sub 0.5}O{sub 2}-based metal-ferroelectric-metal capacitor with TiN electrodes was fabricated and its electrical properties were investigated. It was also shown that the proposed PE-ALD process provides an early film continuity, which was confirmed by ultrathin fully continuous film growth. Such ultrathin (3 nm) and fully continuous TiN film was also successfully implemented as the top electrode to Hf{sub 0.5}Zr{sub 0.5}O{sub 2}-based ferroelectric capacitor. Angle-resolved X-ray photoelectron spectroscopy (AR-XPS) was used for its thickness determination and a visible wake-up effect in underlying Hf{sub 0.5}Zr{sub 0.5}O{sub 2} layer was clearly observed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Microwave Service Towers

    Data.gov (United States)

    Department of Homeland Security — This file is an extract of the Universal Licensing System (ULS) licensed by the Wireless Telecommunications Bureau (WTB). It consists of Microwave Transmitters (see...

  11. Microwave Radiometer Profiler

    Data.gov (United States)

    Oak Ridge National Laboratory — The microwave radiometer profiler (MWRP) provides vertical profiles of temperature, humidity, and cloud liquid water content as a function of height or pressure at...

  12. Microwave Oven Observations.

    Science.gov (United States)

    Sumrall, William J.; Richardson, Denise; Yan, Yuan

    1998-01-01

    Explains a series of laboratory activities which employ a microwave oven to help students understand word problems that relate to states of matter, collect data, and calculate and compare electrical costs to heat energy costs. (DDR)

  13. Microwave Oven Observations.

    Science.gov (United States)

    Sumrall, William J.; Richardson, Denise; Yan, Yuan

    1998-01-01

    Explains a series of laboratory activities which employ a microwave oven to help students understand word problems that relate to states of matter, collect data, and calculate and compare electrical costs to heat energy costs. (DDR)

  14. Microwave Radiometer - high frequency

    Data.gov (United States)

    Oak Ridge National Laboratory — The Microwave Radiometer-High Frequency (MWRHF) provides time-series measurements of brightness temperatures from two channels centered at 90 and 150 GHz. These two...

  15. The Effect of Microwave Radiation on Prickly Paddy Melon (Cucumis myriocarpus

    Directory of Open Access Journals (Sweden)

    Graham Brodie

    2012-01-01

    Full Text Available The growing list of herbicide-resistant biotypes and environmental concerns about chemical use has prompted interest in alternative methods of managing weeds. This study explored the effect of microwave energy on paddy melon (Cucumis myriocarpus plants, fruits, and seeds. Microwave treatment killed paddy melon plants and seeds. Stem rupture due to internal steam explosions often occurred after the first few seconds of microwave treatment when a small aperture antenna was used to apply the microwave energy. The half lethal microwave energy dose for plants was 145 J/cm2; however, a dose of at least 422 J/cm2 was needed to kill seeds. This study demonstrated that a strategic burst of intense microwave energy, focused onto the stem of the plant is as effective as applying microwave energy to the whole plant, but uses much less energy.

  16. Microwave workshop for Windows

    Directory of Open Access Journals (Sweden)

    Colin White

    1995-12-01

    Full Text Available A suite of three programs has been developed to support the teaching of microwave theory and design. A secondary function of the package is to support microwave engineers by providing a library of utilities to assist their design function. All three programs were written in Visual Basic and are aimed at supporting both tutor-directed and student-centred learning methodologies. The development team consisted of three final-year degree students.

  17. Microwave system engineering principles

    CERN Document Server

    Raff, Samuel J

    1977-01-01

    Microwave System Engineering Principles focuses on the calculus, differential equations, and transforms of microwave systems. This book discusses the basic nature and principles that can be derived from thermal noise; statistical concepts and binomial distribution; incoherent signal processing; basic properties of antennas; and beam widths and useful approximations. The fundamentals of propagation; LaPlace's Equation and Transmission Line (TEM) waves; interfaces between homogeneous media; modulation, bandwidth, and noise; and communications satellites are also deliberated in this text. This bo

  18. Fast Determination of Essential Oil from Dried Menthol Mint and Orange Peel by Solvent Free Microwave Extraction Using Carbonyl Iron Powder as the Microwave Absorption Medium

    Institute of Scientific and Technical Information of China (English)

    WANG Zi-Ming; DING Lan; WANG Lu; FENG Jin; LI Tie-Chun; ZHOU Xin; ZHANG Han-Qi

    2006-01-01

    An improved solvent free microwave extraction, in which a kind of microwave absorption medium (carbonyl iron powder) was used, was applied to the extraction of essential oil from dried menthol mint and orange peel without addition of any solvent and pretreatment. It took much less time of extraction (30 min) than microwave-assisted hydrodistillation (90 min) and conventional hydrodistillation (180 min). The kinds of chemical compositions in essential oil extracted by different methods were almost the same and such improved solvent free microwave extraction can be a feasible way in extraction of essential oil from dried plant materials.

  19. Microwave Spectroscopy of 2-PENTANONE

    Science.gov (United States)

    Andresen, Maike; Nguyen, Ha Vinh Lam; Kleiner, Isabelle; Stahl, Wolfgang

    2017-06-01

    Methyl propyl ketone (MPK) or 2-Pentanone is known to be an alarm pheroromone released by the mandibular glands of the bees. It is a highly volatile compound. This molecule was studied by a combination of quantum chemical calculations and microwave spectroscopy in order to get informations about the lowest energy conformers and their structures.The rotational spectrum of 2-pentanone was measured using the molecular beam Fourier transform microwave spectrometer in Aachen operating between 2 and 26.5 GHz. Ab initio calculations determine 4 conformers but only two of them are observed in our jet-beam conditions.The lowest conformer has a C_{1} structure and its spectrum shows internal rotation splittings arising from two methyl groups. The internal splittings of 305 transitions for this conformer were analyzed using the XIAM code It led to the determination of the values for the barrier heights hindering the internal rotation of two methyl groups of 239 cm^{-1} and 980 cm^{-1} respectively. The next energy conformer has a C_{s} structure and the analysis of the internal splittings of 134 transitions using the XIAM code and the BELGI code led to the determination of internal rotation barrier height of 186 cm^{-1}. Comparisons of quantum chemistry and experimental results will be discussed. H. Hartwig, H. Dreizler, Z. Naturforsch. 51a, 923 (1996). J. T. Hougen, I. Kleiner and M. Godefroid, J. Mol. Spectrosc., 163, 559-586 (1994).

  20. Plasma-enhanced atomic layer deposition of nanoscale yttria-stabilized zirconia electrolyte for solid oxide fuel cells with porous substrate.

    Science.gov (United States)

    Ji, Sanghoon; Cho, Gu Young; Yu, Wonjong; Su, Pei-Chen; Lee, Min Hwan; Cha, Suk Won

    2015-02-11

    Nanoscale yttria-stabilized zirconia (YSZ) electrolyte film was deposited by plasma-enhanced atomic layer deposition (PEALD) on a porous anodic aluminum oxide supporting substrate for solid oxide fuel cells. The minimum thickness of PEALD-YSZ electrolyte required for a consistently high open circuit voltage of 1.17 V at 500 °C is 70 nm, which is much thinner than the reported thickness of 180 nm using nonplasmatic ALD and is also the thinnest attainable value reported in the literatures on a porous supporting substrate. By further reducing the electrolyte thickness, the grain size reduction resulted in high surface grain boundary density at the cathode/electrolyte interface.

  1. The Effect of Microwave Radiation on Prickly Paddy Melon (Cucumis myriocarpus)

    OpenAIRE

    Graham Brodie; Carmel Ryan; Carmel Lancaster

    2012-01-01

    The growing list of herbicide-resistant biotypes and environmental concerns about chemical use has prompted interest in alternative methods of managing weeds. This study explored the effect of microwave energy on paddy melon (Cucumis myriocarpus) plants, fruits, and seeds. Microwave treatment killed paddy melon plants and seeds. Stem rupture due to internal steam explosions often occurred after the first few seconds of microwave treatment when a small aperture antenna was used to apply the mi...

  2. Electrical properties of plasma-deposited silicon oxide clarified by chemical modeling

    NARCIS (Netherlands)

    Kovalgin, A.Y.; Boogaard, A.; Brunets, I.; Aarnink, A.A.I.; Wolters, R.A.M.

    2009-01-01

    Our study is focused on Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon dioxide films at low temperatures (< 150 oC) using Inductively Coupled (IC) High-Density (HD) plasma source. We recently fabricated Thin Film Transistors (TFTs) with high-quality ICPECVD gate oxides, which exhibited

  3. Controlling the resistivity gradient in chemical vapor deposition-deposited aluminum-doped zinc oxide

    NARCIS (Netherlands)

    Ponomarev, M. V.; Verheijen, M. A.; Keuning, W.; M. C. M. van de Sanden,; Creatore, M.

    2012-01-01

    Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO: Al layers by focusing on the control

  4. A REVIEW ON: A SIGNIFICANCE OF MICROWAVE ASSIST TECHNIQUE IN GREEN CHEMISTRY

    Directory of Open Access Journals (Sweden)

    Manoj S. Charde

    2012-05-01

    Full Text Available Microwave Assisted Synthesis is rapidly becoming the method of choice in modern synthesis and discovery chemistry laboratories. Microwave-assisted synthesis improves both throughput and turn-around time for chemists by offering the benefits of drastically reduced reaction times, increased yields, and purer products. In this type of synthesis we applying microwave irradiation to chemical reactions. The fundamental mechanism of microwave heating involves agitation of polar molecules or ions that oscillate under the effect of an oscillating electric or magnetic field. In the presence of an oscillating field, particles try to orient themselves or be in phase with the field. Only materials that absorb microwave radiation are relevant to microwave chemistry. These materials can be categorized according to the three main mechanisms of heating, namely. Dipolar polarization, Conduction mechanism, Interfacial polarization. Microwave chemistry apparatus are classified: Single-mode apparatus and Multi-mode apparatus. Although occasionally known by such acronyms as 'MEC' (Microwave-Enhanced Chemistry or ‘MORE’ synthesis (Microwave-organic Reaction Enhancement, these acronyms have had little acceptance outside a small number of groups. The ability to combine microwave technology with in-situ reaction monitoring as an analytical tools will offer opportunities for chemists to optimize the reaction conditions. Different compounds convert microwave radiation to heat by different amounts. This selectivity allows some parts of the object being heated to heat more quickly or more slowly than others (particularly the reaction vessel.

  5. Methane coupling in microwave plasma under atmospheric pressure

    Institute of Scientific and Technical Information of China (English)

    Changsheng Shen; Dekun Sun; Hongsheng Yang

    2011-01-01

    Methane coupling in microwave plasma under atmospheric pressure has been investigated.The effects of molar ratio n(CH4)/n(H2),flow rate and microwave power on the reaction have been studied.(1) With the decrease of n(CH4)/n(H2) ratio,methane conversion,C2 hydrocarbon yield,energy yield and space-time yield of acetylene increased,but the yield of carbon deposit decreased.(2) With the increase of microwave power,energy yield of acetylene decreased,but space-time yield of acetylene increased.(3) With the increase of flow rate,energy yield and space-time yield of acetylene increased first and then decreased.Finally,under the reaction conditions of CH4 flow rate of 700 mL/min,n(CH4)/n(H2) ratio of 1/4 and microwave power of 400 W,the energy yield and space-time yield of acetylene could reach 0.337 mmol/kJ and 12.3 mol/(s·m3),respectively.The reaction mechanism of methane coupling in microwave plasma has been investigated based on the thermodynamics of chemical reaction.Interestingly,the acetylene yield of methane coupling in microwave plasma was much higher than the maximum thermodynamic yield of acetylene.This phenomenon was tentatively explained from non-expansion work in the microwave plasma system.

  6. Anomalous Microwave Emission

    CERN Document Server

    Kogut, A J

    1999-01-01

    Improved knowledge of diffuse Galactic emission is important to maximize the scientific return from scheduled CMB anisotropy missions. Cross-correlation of microwave maps with maps of the far-IR dust continuum show a ubiquitous microwave emission component whose spatial distribution is traced by far-IR dust emission. The spectral index of this emission, beta_{radio} = -2.2 (+0.5 -0.7) is suggestive of free-free emission but does not preclude other candidates. Comparison of H-alpha and microwave results show that both data sets have positive correlations with the far-IR dust emission. Microwave data, however, are consistently brighter than can be explained solely from free-free emission traced by H-alpha. This ``anomalous'' microwave emission can be explained as electric dipole radiation from small spinning dust grains. The anomalous component at 53 GHz is 2.5 times as bright as the free-free emission traced by H-alpha, providing an approximate normalization for models with significant spinning dust emission.

  7. Microwave engineering concepts and fundamentals

    CERN Document Server

    Khan, Ahmad Shahid

    2014-01-01

    Detailing the active and passive aspects of microwaves, Microwave Engineering: Concepts and Fundamentals covers everything from wave propagation to reflection and refraction, guided waves, and transmission lines, providing a comprehensive understanding of the underlying principles at the core of microwave engineering. This encyclopedic text not only encompasses nearly all facets of microwave engineering, but also gives all topics—including microwave generation, measurement, and processing—equal emphasis. Packed with illustrations to aid in comprehension, the book: •Describes the mathematical theory of waveguides and ferrite devices, devoting an entire chapter to the Smith chart and its applications •Discusses different types of microwave components, antennas, tubes, transistors, diodes, and parametric devices •Examines various attributes of cavity resonators, semiconductor and RF/microwave devices, and microwave integrated circuits •Addresses scattering parameters and their properties, as well a...

  8. Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell

    Directory of Open Access Journals (Sweden)

    Mi-jin Jin

    2013-10-01

    Full Text Available We studied the tuning of structural and optical properties of ZnO thin film and its correlation to the efficiency of inverted solar cell using plasma-enhanced atomic layer deposition (PEALD. The sequential injection of DEZn and O2 plasma was employed for the plasma-enhanced atomic layer deposition of ZnO thin film. As the growth temperature of ZnO film was increased from 100 °C to 300 °C, the crystallinity of ZnO film was improved from amorphous to highly ordered (002 direction ploy-crystal due to self crystallization. Increasing oxygen plasma time in PEALD process also introduces growing of hexagonal wurtzite phase of ZnO nanocrystal. Excess of oxygen plasma time induces enhanced deep level emission band (500 ∼ 700 nm in photoluminescence due to Zn vacancies and other defects. The evolution of structural and optical properties of PEALD ZnO films also involves in change of electrical conductivity by 3 orders of magnitude. The highly tunable PEALD ZnO thin films were employed as the electron conductive layers in inverted polymer solar cells. Our study indicates that both structural and optical properties rather than electrical conductivities of ZnO films play more important role for the effective charge collection in photovoltaic device operation. The ability to tune the materials properties of undoped ZnO films via PEALD should extend their functionality over the wide range of advanced electronic applications.

  9. Preliminary analysis of chemical reaction under the radiation of electromagnetic wave

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Microwave can be used to accelerate chemical reaction and improve the rate of production.Does microwave only act as a heating factor? Do there exist any specific effects? These questions are still holding a violent controversy.Here we will choose the Belousov- Zhabotinsky reaction,which is sensitive to surrounding effects,to study the influence of microwave on chemical reactions.Visible changes of periods have been observed.It appeares that there could have been specific effects of microwave.

  10. Microwave-assisted liquefaction of rape straw for the production of bio-oils

    Science.gov (United States)

    Xing-Yan Huang; Feng Li; Jiu-Long Xie; Cornelis F. De Hoop; Chung-Yun Hse; Jin-Qiu Qi; Hui. Xiao

    2017-01-01

    The acid-catalyzed liquefaction of rape straw in methanol using microwave energy was examined. Conversion yield and energy consumption were evaluated to profile the microwave-assisted liquefaction process. Chemical components of the bio-oils from various liquefaction conditions were identified. A higher reaction temperature was found to be beneficial to obtain higher...

  11. MICROWAVES: FROM MYTH, MYSTERY AND MAGIC TO A FAST-MOVING FRONTIER

    Science.gov (United States)

    A historical account of the utility of microwaves in a variety of chemical applications will be highlighted including solvent-free approach that involves microwave (MW) exposure of neat reactants (undiluted) catalyzed by the surfaces of recyclable mineral supports such as alumina...

  12. Determination of the effect of microwave energy on maize kernel quality

    CSIR Research Space (South Africa)

    Fakude, PM

    2006-02-01

    Full Text Available to an interest in the possible use of microwave energy as a non-chemical insect control measure (Nelson, 1996). AIM • To determine microwave treatment conditions that can eradicate the most common insect pests in stored-grain products; and • To determine...

  13. RESEARCH OF MICROWAVE'S INFLUENCE ON QUALITY OF DELICIOUS PRODUCTS FROM BEEF

    Directory of Open Access Journals (Sweden)

    T. Kozlova

    2012-03-01

    Full Text Available Influence of time of microwave fluctuations on organoleptic indicators, chemical composition, exit and periods of storage of a meat product is investigated. It is established that the use of microwave technology in the beef delicacy reduces the salting by 3 times, and baking by 1,2 times. The yield of finished products increased by 2 times.

  14. RESEARCH OF MICROWAVE'S INFLUENCE ON QUALITY OF DELICIOUS PRODUCTS FROM BEEF

    OpenAIRE

    Kozlova, T.

    2012-01-01

    Influence of time of microwave fluctuations on organoleptic indicators, chemical composition, exit and periods of storage of a meat product is investigated. It is established that the use of microwave technology in the beef delicacy reduces the salting by 3 times, and baking by 1,2 times. The yield of finished products increased by 2 times.

  15. Process control by optical emission spectroscopy during growth of a-C:H from a CH4 plasma by plasma-enhanced chemical vapour deposition

    DEFF Research Database (Denmark)

    Barholm-Hansen, C; Bentzon, MD; Vigild, Martin Etchells

    1994-01-01

    of the gas flow. Above a certain flow rate the intensity saturates, since the deposition process is limited by the power input. At low flow rates a large fraction of the feed gas is dissociated and the deposition is limited by the supply of feed gas. A relationship was found for the intensity of the CH 431...... in the process gas. The initial OH intensity was dependent on the ultimate vacuum prior to the plasma cleaning. A correlation was found between the vanishing of the OH line and the appearance of characteristic emission lines From sputtered electrode material....

  16. Global model of a low pressure ECR microwave plasma applied to the PECVD of SiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yanguas-Gil, A [Instituto de Ciencia de Materiales de Sevilla, CSIC - Universidad de Sevilla, Av. Americo Vespucio 49, 41092 Sevilla (Spain); Cotrino, J [Instituto de Ciencia de Materiales de Sevilla, CSIC - Universidad de Sevilla, Av. Americo Vespucio 49, 41092 Sevilla (Spain); Gonzalez-Elipe, A R [Instituto de Ciencia de Materiales de Sevilla, CSIC - Universidad de Sevilla, Av. Americo Vespucio 49, 41092 Sevilla (Spain)

    2007-06-07

    A global model for electronegative plasmas in a pressure range of 0.1-100 Pa is used to investigate the dissociation of the precursor in O{sub 2}/SiCl(CH{sub 3}){sub 3} discharges. Microwave power is fed to the plasma by an annular waveguide ring with slotted line radiators on the inner side (SLAN) that is operated at 2.45 GHz. The modelling of the ECR plasma discharge and its application to the plasma enhanced chemical vapour deposition (PECVD) of silicon oxide films are reported. In the case of an oxygen discharge, theoretical values of the main plasma parameters (electron density and temperature and atomic oxygen population) are presented as a function of both pressure and electromagnetic power. The model results are compared with the experimental results obtained by optical emission spectroscopy, obtaining reasonably good agreement. The application of the model to the study of the PECVD of SiO{sub 2} film from O{sub 2}/SiCl(CH{sub 3}){sub 3} mixtures has enabled us to determine that the fragmentation of the SiCl(CH{sub 3}){sub 3} molecule takes place mainly by electron impact dissociation, while the growth rate seems to be controlled by oxidation processes. Finally the influence of the precursor in the discharge has been studied. According to the model, in a first order approximation the insertion of the precursor causes an increase in the electron density due to the lower ionization threshold of the SiCl(CH{sub 3}){sub 3} molecule.

  17. XPS and FTIR spectroscopic study on microwave treated high phosphorus iron ore

    Energy Technology Data Exchange (ETDEWEB)

    Omran, Mamdouh, E-mail: mamdouh.omran@oulu.fi [Process Metallurgy Research Group, Faculty of Technology, University of Oulu (Finland); Mineral Processing and Agglomeration Lab, Central Metallurgical Research and Development Institute, Cairo (Egypt); Fabritius, Timo [Process Metallurgy Research Group, Faculty of Technology, University of Oulu (Finland); Elmahdy, Ahmed M.; Abdel-Khalek, Nagui A. [Mineral Processing and Agglomeration Lab, Central Metallurgical Research and Development Institute, Cairo (Egypt); El-Aref, Mortada; Elmanawi, Abd El-Hamid [Geology Department, Faculty of Science, Cairo University, Giza 12613 (Egypt)

    2015-08-01

    Highlights: • The effect of microwave radiation on structure and chemical state of high phosphorus iron ore was studied. • FTIR analyses showed that after microwave radiation the functional chemical groups of phosphorus bearing minerals (fluorapatite) dissociated. • High resolution XPS analyses of Fe 2p peaks showed that after microwave radiation a portion of Fe(+III) was reduced to Fe(+II). • Microwave radiation had a positive effect on the magnetic properties of iron oxide, through formation of ferromagnetic phases. - Abstract: A growing interest in microwave heating has emerged recently. Several potential microwave applications regarding minerals’ processing have been investigated. This paper investigates the effect of microwave radiation on Egyptian high phosphorus iron ore. Three different iron ore samples have varying Fe{sub 2}O{sub 3} and P{sub 2}O{sub 5} contents and mineralogical textures were studied. A comparative study has been carried out between untreated and microwave treated iron ore. XRD and FTIR analyses showed that after microwave radiation the crystallinity of iron bearing minerals (hematite) increased, while the functional chemical groups of phosphorus bearing minerals (fluorapatite) and other gangues dissociated. High resolution XPS analyses of Fe 2p peaks showed that after microwave radiation a portion of Fe(+III) was reduced to Fe(+II). This means that after microwave radiation iron oxide (hematite, Fe{sup 3+}) transformed into more magnetic phase. The results indicated that microwave radiation had a positive effect on the magnetic properties of iron oxide, through formation of ferromagnetic phases.

  18. Microwave dielectric properties and chemical compatibility with silver electrode of Li2TiO3 ceramic with Li2O-ZnO-B2O3 glass additive

    Science.gov (United States)

    Sayyadi-Shahraki, A.; Taheri-Nassaj, E.; Hassanzadeh-Tabrizi, S. A.; Barzegar-Bafrooei, H.

    2015-01-01

    The effects of Li2O-ZnO-B2O3 (LZB) glass additive on the sintering behavior, phase composition, microstructure and microwave dielectric properties of Li2TiO3 (LT) ceramics have been investigated. The addition of a small amount of LZB glass can reduce the sintering temperature of LT ceramics from 1150 °C to 900 °C without obvious degradation of the microwave dielectric properties. Only a single-phase Li2TiO3 is formed in LT ceramic with LZB glass addition sintered at 900 °C for 2 h. Typically, the 2.5 wt% LZB glass-added LT ceramic sintered at 900 °C for 2 h can reach a maximum relative density of 94.8% of the theoretical density and exhibits good microwave dielectric properties of εr=22.9, Qf=59,600 GHz and τf=+23.7 ppm/°C. The XRD, SEM and EDX analyses showed that the ceramic can be co-fired well with Ag electrode, which may be applied for LTCC application.

  19. Microwave dielectric properties and chemical compatibility with silver electrode of Li{sub 2}TiO{sub 3} ceramic with Li{sub 2}O–ZnO–B{sub 2}O{sub 3} glass additive

    Energy Technology Data Exchange (ETDEWEB)

    Sayyadi-Shahraki, A. [Department of Materials Science and Engineering, Tarbiat Modares University, PO Box 14115-143, Tehran (Iran, Islamic Republic of); Taheri-Nassaj, E., E-mail: taheri@modares.ac.ir [Department of Materials Science and Engineering, Tarbiat Modares University, PO Box 14115-143, Tehran (Iran, Islamic Republic of); Hassanzadeh-Tabrizi, S.A. [Department of Materials Engineering, Islamic Azad University, Najafabad Branch, Isfahan (Iran, Islamic Republic of); Barzegar-Bafrooei, H. [Department of Materials Science and Engineering, Tarbiat Modares University, PO Box 14115-143, Tehran (Iran, Islamic Republic of)

    2015-01-15

    The effects of Li{sub 2}O–ZnO–B{sub 2}O{sub 3} (LZB) glass additive on the sintering behavior, phase composition, microstructure and microwave dielectric properties of Li{sub 2}TiO{sub 3} (LT) ceramics have been investigated. The addition of a small amount of LZB glass can reduce the sintering temperature of LT ceramics from 1150 °C to 900 °C without obvious degradation of the microwave dielectric properties. Only a single-phase Li{sub 2}TiO{sub 3} is formed in LT ceramic with LZB glass addition sintered at 900 °C for 2 h. Typically, the 2.5 wt% LZB glass-added LT ceramic sintered at 900 °C for 2 h can reach a maximum relative density of 94.8% of the theoretical density and exhibits good microwave dielectric properties of ε{sub r}=22.9, Qf=59,600 GHz and τ{sub f}=+23.7 ppm/°C. The XRD, SEM and EDX analyses showed that the ceramic can be co-fired well with Ag electrode, which may be applied for LTCC application.

  20. High power microwaves

    CERN Document Server

    Benford, James; Schamiloglu, Edl

    2016-01-01

    Following in the footsteps of its popular predecessors, High Power Microwaves, Third Edition continues to provide a wide-angle, integrated view of the field of high power microwaves (HPMs). This third edition includes significant updates in every chapter as well as a new chapter on beamless systems that covers nonlinear transmission lines. Written by an experimentalist, a theorist, and an applied theorist, respectively, the book offers complementary perspectives on different source types. The authors address: * How HPM relates historically and technically to the conventional microwave field * The possible applications for HPM and the key criteria that HPM devices have to meet in order to be applied * How high power sources work, including their performance capabilities and limitations * The broad fundamental issues to be addressed in the future for a wide variety of source types The book is accessible to several audiences. Researchers currently in the field can widen their understanding of HPM. Present or pot...

  1. Physics of the Microwave Oven

    Science.gov (United States)

    Vollmer, Michael

    2004-01-01

    This is the first of two articles about the physics of microwave ovens. This article deals with the generation of microwaves in the oven and includes the operation of the magnetrons, waveguides and standing waves in resonant cavities. It then considers the absorption of microwaves by foods, discussing the dielectric relaxation of water,…

  2. Physics of the Microwave Oven

    Science.gov (United States)

    Vollmer, Michael

    2004-01-01

    This is the first of two articles about the physics of microwave ovens. This article deals with the generation of microwaves in the oven and includes the operation of the magnetrons, waveguides and standing waves in resonant cavities. It then considers the absorption of microwaves by foods, discussing the dielectric relaxation of water,…

  3. Microwave Frequency Polarizers

    Science.gov (United States)

    Ha, Vien The; Mirel, Paul; Kogut, Alan J.

    2013-01-01

    This article describes the fabrication and analysis of microwave frequency polarizing grids. The grids are designed to measure polarization from the cosmic microwave background. It is effective in the range of 500 to 1500 micron wavelength. It is cryogenic compatible and highly robust to high load impacts. Each grid is fabricated using an array of different assembly processes which vary in the types of tension mechanisms to the shape and size of the grids. We provide a comprehensive study on the analysis of the grids' wire heights, diameters, and spacing.

  4. Microwave Discharge Ion Sources

    CERN Document Server

    Celona, L

    2013-01-01

    This chapter describes the basic principles, design features and characteristics of microwave discharge ion sources. A suitable source for the production of intense beams for high-power accelerators must satisfy the requirements of high brightness, stability and reliability. The 2.45 GHz off-resonance microwave discharge sources are ideal devices to generate the required beams, as they produce multimilliampere beams of protons, deuterons and singly charged ions. A description of different technical designs will be given, analysing their performance, with particular attention being paid to the quality of the beam, especially in terms of its emittance.

  5. Fundamentals of microwave photonics

    CERN Document Server

    Urick, V J; McKinney , Jason D

    2015-01-01

    A comprehensive resource to designing andconstructing analog photonic links capable of high RFperformanceFundamentals of Microwave Photonics provides acomprehensive description of analog optical links from basicprinciples to applications.  The book is organized into fourparts. The first begins with a historical perspective of microwavephotonics, listing the advantages of fiber optic links anddelineating analog vs. digital links. The second section coversbasic principles associated with microwave photonics in both the RFand optical domains.  The third focuses on analog modulationformats-starti

  6. Microwave circulator design

    CERN Document Server

    Linkhart, Douglas K

    2014-01-01

    Circulator design has advanced significantly since the first edition of this book was published 25 years ago. The objective of this second edition is to present theory, information, and design procedures that will enable microwave engineers and technicians to design and build circulators successfully. This resource contains a discussion of the various units used in the circulator design computations, as well as covers the theory of operation. This book presents numerous applications, giving microwave engineers new ideas about how to solve problems using circulators. Design examples are provided, which demonstrate how to apply the information to real-world design tasks.

  7. Microwave Assisted Drug Delivery

    DEFF Research Database (Denmark)

    Jónasson, Sævar Þór; Zhurbenko, Vitaliy; Johansen, Tom Keinicke

    2014-01-01

    In this work, the microwave radiation is adopted for remote activation of pharmaceutical drug capsules inside the human body in order to release drugs at a pre-determined time and location. An array of controllable transmitting sources is used to produce a constructive interference at a certain...... focus point inside the body, where the drugs are then released from the specially designed capsules. An experimental setup for microwave activation has been developed and tested on a body phantom that emulates the human torso. A design of sensitive receiving structures for integration with a drug...

  8. Microwave Assisted Drug Delivery

    DEFF Research Database (Denmark)

    Jónasson, Sævar Þór; Zhurbenko, Vitaliy; Johansen, Tom Keinicke

    2014-01-01

    In this work, the microwave radiation is adopted for remote activation of pharmaceutical drug capsules inside the human body in order to release drugs at a pre-determined time and location. An array of controllable transmitting sources is used to produce a constructive interference at a certain...... focus point inside the body, where the drugs are then released from the specially designed capsules. An experimental setup for microwave activation has been developed and tested on a body phantom that emulates the human torso. A design of sensitive receiving structures for integration with a drug...

  9. EDITORIAL: Microwave Moisture Measurements

    Science.gov (United States)

    Kaatze, Udo; Kupfer, Klaus; Hübner, Christof

    2007-04-01

    Microwave moisture measurements refer to a methodology by which the water content of materials is non-invasively determined using electromagnetic fields of radio and microwave frequencies. Being the omnipresent liquid on our planet, water occurs as a component in most materials and often exercises a significant influence on their properties. Precise measurements of the water content are thus extremely useful in pure sciences, particularly in biochemistry and biophysics. They are likewise important in many agricultural, technical and industrial fields. Applications are broad and diverse, and include the quality assessment of foodstuffs, the determination of water content in paper, cardboard and textile production, the monitoring of moisture in sands, gravels, soils and constructions, as well as the measurement of water admixtures to coal and crude oil in reservoirs and in pipelines. Microwave moisture measurements and evaluations require insights in various disciplines, such as materials science, dielectrics, the physical chemistry of water, electrodynamics and microwave techniques. The cooperation of experts from the different fields of science is thus necessary for the efficient development of this complex discipline. In order to advance cooperation the Workshop on Electromagnetic Wave Interaction with Water and Moist Substances was held in 1993 in Atlanta. It initiated a series of international conferences, of which the last one was held in 2005 in Weimar. The meeting brought together 130 scientists and engineers from all over the world. This special issue presents a collection of some selected papers that were given at the event. The papers cover most topics of the conference, featuring dielectric properties of aqueous materials, electromagnetic wave interactions, measurement methods and sensors, and various applications. The special issue is dedicated to Dr Andrzej W Kraszewski, who died in July 2006 after a distinguished career of 48 years in the research of

  10. Plasma-Enhanced Atmospheric-Pressure Spatial ALD of Al2O3 and ZrO2

    NARCIS (Netherlands)

    Creyghton, Y.; Illiberi, A.; Mione, M.; Boekel, W. van; Debernardi, N.; Seitz, M.; Bruele, F. van den; Poodt, P.; Roozeboom,F.

    2016-01-01

    Non-thermal plasma sources are known to lower the operation temperatures and widen the process windows in thermal ALD of thin-film materials. In spatial ALD, novel plasma sources with exceptional dimensional and chemical stability are required to provide the flow geometries optimized for efficient t

  11. Microwave Measurements of Ferrite Polymer Composite Materials

    Directory of Open Access Journals (Sweden)

    Rastislav Dosoudil

    2004-01-01

    Full Text Available The article focuses on the microwave measurements performed on the nickel-zinc sintered ferrite with the chemical formula Ni0.3Zn0.7Fe2O4 produced by the ceramic technique and composite materials based on this ferrite and a non-magnetic polymer (polyvinyl chloride matrix. The prepared composite samples had the same particle size distribution 0-250um but different ferrite particle concentrations between 23 vol% and 80 vol%. The apparatus for measurement of the signal proportional to the absolute value of scattering parameter S11 (reflexion coefficient is described and the dependence of measured reflected signal on a bias magnetic field has been studied. By means of experiments, the resonances to be connected with the geometry of microwave experimental set-up were distinguished from ferromagnetic resonance arising in ferrite particles of composite structure. The role of local interaction fields of ferrite particles in composite material has been discussed.

  12. Effects of feedstock characteristics on microwave-assisted pyrolysis - A review.

    Science.gov (United States)

    Zhang, Yaning; Chen, Paul; Liu, Shiyu; Peng, Peng; Min, Min; Cheng, Yanling; Anderson, Erik; Zhou, Nan; Fan, Liangliang; Liu, Chenghui; Chen, Guo; Liu, Yuhuan; Lei, Hanwu; Li, Bingxi; Ruan, Roger

    2017-04-01

    Microwave-assisted pyrolysis is an important approach to obtain bio-oil from biomass. Similar to conventional electrical heating pyrolysis, microwave-assisted pyrolysis is significantly affected by feedstock characteristics. However, microwave heating has its unique features which strongly depend on the physical and chemical properties of biomass feedstock. In this review, the relationships among heating, bio-oil yield, and feedstock particle size, moisture content, inorganics, and organics in microwave-assisted pyrolysis are discussed and compared with those in conventional electrical heating pyrolysis. The quantitative analysis of data reported in the literature showed a strong contrast between the conventional processes and microwave based processes. Microwave-assisted pyrolysis is a relatively new process with limited research compared with conventional electrical heating pyrolysis. The lack of understanding of some observed results warrant more and in-depth fundamental research. Copyright © 2017 Elsevier Ltd. All rights reserved.

  13. Microwave Radiation Hazards

    Directory of Open Access Journals (Sweden)

    G. Subrahmanian

    1973-07-01

    Full Text Available Excessive exposure to microwave radiation could lead to biological damage. The criteria for maximum permissible exposure limits derived from experiments by several countries are discussed. Recommendations made for safety of operating personnel based on a recent protection survey are also presented.

  14. Leakage of Microwave Ovens

    Science.gov (United States)

    Abdul-Razzaq, W.; Bushey, R.; Winn, G.

    2011-01-01

    Physics is essential for students who want to succeed in science and engineering. Excitement and interest in the content matter contribute to enhancing this success. We have developed a laboratory experiment that takes advantage of microwave ovens to demonstrate important physical concepts and increase interest in physics. This experiment…

  15. Leakage of Microwave Ovens

    Science.gov (United States)

    Abdul-Razzaq, W.; Bushey, R.; Winn, G.

    2011-01-01

    Physics is essential for students who want to succeed in science and engineering. Excitement and interest in the content matter contribute to enhancing this success. We have developed a laboratory experiment that takes advantage of microwave ovens to demonstrate important physical concepts and increase interest in physics. This experiment…

  16. Invisible to Microwaves

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    @@ Scientists can't yet make an invisibility cloak like the one that Harry Potter uses.But,for the first time,they've constructed a simple cloaking(1)d__that makes itself and something placed inside it invisible to microwaves.

  17. Kinetic aspects of the formation of aluminium oxide by use of a microwave-induced plasma.

    Science.gov (United States)

    Quade, A; Steffen, H; Hippler, R; Wulff, H

    2002-10-01

    The oxidation of thin aluminium layers in a microwave plasma has been investigated to determine the kinetics of oxide growth. Thin Al-coatings were oxidized by means of a variety of gas mixtures, characterized by different partial pressures of oxygen, in microwave-induced plasmas of different power. To study the whole kinetic process the Al-metal and the oxide formed were investigated by means of a combination of grazing incidence X-ray reflectometry (GIXR) and grazing incidence X-ray diffractometry (GIXRD). XPS and FTIR spectroscopy confirmed the formation of stoichiometric Al(2)O(3). The alumina formed is X-ray amorphous. Quantitative description of oxide formation was achieved indirectly by determination of the decrease in the integrated intensity of the Al(111)-peak and the total thickness of the whole coating. These values enabled calculation of kinetic data. It was found that oxide growth was a combination of two simultaneous processes - diffusion and sputter processes. The diffusion coefficient D (cm(2) s(-1)) and the sputter rate S (nm s(-1)) were determined. The effect of the composition of the gas mixture, microwave power, and concentration of activated oxygen species on the oxidation process will be discussed. For calculation of the activation energy, E(A), of this plasma-enhanced diffusion process the temperature-dependence of D was investigated.

  18. PROCESS INTENSIFICATION: OXIDATION OF BENZYL ALCOHOL USING A CONTINUOUS ISOTHERMAL REACTOR UNDER MICROWAVE IRRADIATION

    Science.gov (United States)

    In the past two decades, several investigations have been carried out using microwave radiation for performing chemical transformations. These transformations have been largely performed in conventional batch reactors with limited mixing and heat transfer capabilities. The reacti...

  19. Alternative energy input: Mechanochemical, microwave and ultrasound-assisted organic synthesis

    Science.gov (United States)

    Microwave, ultrasound, sunlight and mechanochemical mixing can be used to augment conventional laboratory techniques. By applying these alternative means of activation, a number of chemical transformations have been achieved thereby improving many existing protocols with superi...

  20. Physico-chemical and mechanical modifications of polyethylene and polypropylene by ion implantation, micro-wave plasma, electron beam radiation and gamma ray irradiation; Modifications physico-chimiques et mecaniques du polyethylene et du polypropylene par implantation ionique, plasma micro-ondes, bombardement d`electrons et irradiation gamma

    Energy Technology Data Exchange (ETDEWEB)

    Liao, J.D.

    1995-03-29

    A polyolefin surface becomes wettable when treated by micro-wave plasma or low-dose nitrogen ion implantation. A short time argon plasma treatment is sufficient to obtain polarizable peroxides on a polyolefin. X-ray photoelectron spectroscopy analyses, paramagnetic electronic resonance analyses, peroxides decomposition, wettability measurements and infrared active spectra analyses have shown that oxidized structures obtained from different treatment techniques play an important role in the interpretation of surface chemical properties of the polymer. Micro-wave plasma treatment, and in particular argon plasma treatment, yields more polarizable groups than ion implantation and is interesting for grafting. Hardness and elasticity modulus, measured by nano-indentation on a polyolefin, increase with an appropriate ion implantation dose. A 1.4 x 10{sup 17} ions.cm{sup -2} dose can multiply by 15 the hardness of high molecular weight polyethylene, and by 7 the elasticity modulus for a 30 nm depth. The viscous-plastic to quasi-elastic transition is shown. The thickness of the modified layer is over 300 nm. The study of friction between a metal sphere and a polyethylene cupula shows that ion implantation in the polymer creates a reticulated hard and elastic layer which improves its mechanical properties and reduces the erosion rate. Surface treatments on polymers used as biomaterials allow to adapt the surface properties to specific applications. 107 refs., 66 figs., 19 tabs., 4 annexes.

  1. Efficient plasma-enhanced method for layered LiNi1/3Co1/3Mn1/3O2 cathodes with sulfur atom-scale modification for superior-performance Li-ion batteries.

    Science.gov (United States)

    Jiang, Qianqian; Chen, Ning; Liu, Dongdong; Wang, Shuangyin; Zhang, Han

    2016-06-01

    In order to improve the electrochemical performance of LiNi1/3Co1/3Mn1/3O2 as a lithium insertion positive electrode material, atom-scale modification was realized to obtain the layered oxysulfide LiNi1/3Co1/3Mn1/3O2-xSx using a novel plasma-enhanced doping strategy. The structure and electrochemical performance of LiNi1/3Co1/3Mn1/3O2-xSx are investigated systematically, which confirms that the S doping can make the structure stable and benefit the electrochemical performance. The phys-chemical characterizations indicate that oxygen atoms in the initial LiNi1/3Co1/3Mn1/3O2 have been partially replaced by S atoms. It should be pointed out that the atom-scale modification does not significantly alter the intrinsic structure of the cathode. Compared to the pristine material, the LiNi1/3Co1/3Mn1/3O2-xSx shows a superior performance with a higher capacity (200.4 mA h g(-1)) and a significantly improved cycling stability (maintaining 94.46% of its initial discharge capacity after 100 cycles). Moreover, it has an excellent rate performance especially at elevated performance, which is probably due to the faster Li(+) transportation after S doping into the layered structure. All the results show that the atom-scale modification with sulfur atoms on LiNi1/3Co1/3Mn1/3O2, which significantly improved the electrochemical performance, offers a novel anionic doping strategy to realize the atom-scale modification of electrode materials to improve their electrochemical performance.

  2. The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2–N2 capacitive discharges

    Science.gov (United States)

    Napari, M.; Tarvainen, O.; Kinnunen, S.; Arstila, K.; Julin, J.; Fjellvåg, Ø. S.; Weibye, K.; Nilsen, O.; Sajavaara, T.

    2017-03-01

    Two distinguishable plasma modes in the O2–N2 radio frequency capacitively coupled plasma (CCP) used in remote plasma-enhanced atomic layer deposition (PEALD) were observed. Optical emission spectroscopy and spectra interpretation with rate coefficient analysis of the relevant processes were used to connect the detected modes to the α and γ modes of the CCP discharge. To investigate the effect of the plasma modes on the PEALD film growth, ZnO and TiO2 films were deposited using both modes and compared to the films deposited using direct plasma. The growth rate, thickness uniformity, elemental composition, and crystallinity of the films were found to correlate with the deposition mode. In remote CCP operations the transition to the γ mode can result in a parasitic discharge leading to uncontrollable film growth and thus limit the operation parameters of the capacitive discharge in the PEALD applications.

  3. Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid.

    Science.gov (United States)

    Kim, Yongmin; Provine, J; Walch, Stephen P; Park, Joonsuk; Phuthong, Witchukorn; Dadlani, Anup L; Kim, Hyo-Jin; Schindler, Peter; Kim, Kihyun; Prinz, Fritz B

    2016-07-13

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has been the prototypical material for this need and extensive work has been conducted into realizing sufficiently lower wet etch rates (WERs) as well as leakage currents to meet industry needs. In this work, we report on the development of plasma-enhanced atomic layer deposition (PEALD) composites of SiN and AlN to minimize WER and leakage current density. In particular, the role of aluminum and the optimum amount of Al contained in the composite structures have been explored. Films with near zero WER in dilute HF and leakage currents density similar to pure PEALD SiN films could be simultaneously realized through composites which incorporate ≥13 at. % Al, with a maximum thermal budget of 350 °C.

  4. Flexible Solar Cells Using Doped Crystalline Si Film Prepared by Self-Biased Sputtering Solid Doping Source in SiCl4/H2 Microwave Plasma.

    Science.gov (United States)

    Hsieh, Ping-Yen; Lee, Chi-Young; Tai, Nyan-Hwa

    2016-02-01

    We developed an innovative approach of self-biased sputtering solid doping source process to synthesize doped crystalline Si film on flexible polyimide (PI) substrate via microwave-plasma-enhanced chemical vapor deposition (MWPECVD) using SiCl4/H2 mixture. In this process, P dopants or B dopants were introduced by sputtering the solid doping target through charged-ion bombardment in situ during high-density microwave plasma deposition. A strong correlation between the number of solid doping targets and the characteristics of doped Si films was investigated in detail. The results show that both P- and B-doped crystalline Si films possessed a dense columnar structure, and the crystallinity of these structures decreased with increasing the number of solid doping targets. The films also exhibited a high growth rate (>4.0 nm/s). Under optimal conditions, the maximum conductivity and corresponding carrier concentration were, respectively, 9.48 S/cm and 1.2 × 10(20) cm(-3) for P-doped Si film and 7.83 S/cm and 1.5 × 10(20) cm(-3) for B-doped Si film. Such high values indicate that the incorporation of dopant with high doping efficiency (around 40%) into the Si films was achieved regardless of solid doping sources used. Furthermore, a flexible crystalline Si film solar cell with substrate configuration was fabricated by using the structure of PI/Mo film/n-type Si film/i-type Si film/p-type Si film/ITO film/Al grid film. The best solar cell performance was obtained with an open-circuit voltage of 0.54 V, short-circuit current density of 19.18 mA/cm(2), fill factor of 0.65, and high energy conversion of 6.75%. According to the results of bending tests, the critical radius of curvature (RC) was 12.4 mm, and the loss of efficiency was less than 1% after the cyclic bending test for 100 cycles at RC, indicating superior flexibility and bending durability. These results represent important steps toward a low-cost approach to high-performance flexible crystalline Si film

  5. Microwave heating systems for atmospheric pressure: Nonequilibrium plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Guest, G.E.; Dandl, R.A. (AMPC, Inc., Carlsbad, CA (USA))

    1989-03-01

    Nonequilibrium plasma-chemical processing is attracting increasing interest because of the possibility of creating mixtures of active species that would not be available in thermal equilibrium. For significant throughput of reactants it would be advantageous to create nonequilibrium plasmas in large volumes of atmospheric-pressure mixtures of gases. Techniques for accomplishing this are very limited at present. Here they describe a novel microwave approach to creating nonequilibrium plasmas in large volumes of atmospheric-pressure gases using pulses of microwave radiation with very high peak power that are focused by quasi-optical techniques at one or more points in the interior of the reaction chamber. A new type of microwave source, the Plasma Electron Microwave Source (PEMS), is able to produce the require power levels by storing cw microwave power in a mirror-confined, relativistic-electron plasma and periodically transforming a fraction of that stored energy into intense microwave pulses. This approach avoids many of the limitations inherent in resonant cavity approaches and is expected to permit ultrahigh purity discharges to be produced.

  6. Solid-State Microwave Synthesis of Melamine-Formaldehyde Resin

    OpenAIRE

    Subhash Bajia; Rashmi Sharma; Birbal Bajia

    2009-01-01

    An efficient synthesis of melamine-formaldehyde resin has been achieved using conventional as well as microwave irradiations (without and with solid support) in different molar ratio. Resin samples were tested for their chemical as well as physical properties. The structure of all the resin has been supported by their spectral data

  7. Solid-State Microwave Synthesis of Melamine-Formaldehyde Resin

    Directory of Open Access Journals (Sweden)

    Subhash Bajia

    2009-01-01

    Full Text Available An efficient synthesis of melamine-formaldehyde resin has been achieved using conventional as well as microwave irradiations (without and with solid support in different molar ratio. Resin samples were tested for their chemical as well as physical properties. The structure of all the resin has been supported by their spectral data

  8. An efficient empirical model for microwave-induced average temperature of liquid cylindrical reactants.

    Science.gov (United States)

    Yang, Chuqiao; Yakovlev, Vadim V

    2013-01-01

    Microwave-assisted chemical reactions have become very popular in preparative chemistry due to many advantages such as accelerated reaction rate, higher chemical yield and lower energy use. In dedicated equipment, however, the microwave units operate as "black boxes" keeping the role of the thermal effects in microwave-assisted chemical processes somewhat obscure. To address this issue, in this paper, we propose a simple mathematical model for computing microwave-induced temperature in a three-media cylindrical structure representing a core element of a typical microwave reactor with the reactant assumed to be stirred by convection flows. The model determines the average temperature of the reactant for the known absorbed microwave power and heating time. To illustrate its functionality, the model is used to compute time-temperature characteristics of water, ethanol, and methanol heated in the batch reactor MiniFlow 200SS. The curve calculated for water appears to be in an excellent agreement with an experiment. This confirms the hypothesis on temperature homogenization in liquid reactants in batch reactors due to convection and suggests that modeling can be helpful in clarifying and quantifying the details of microwave-assisted chemical processes.

  9. The Cosmic Microwave Background

    Directory of Open Access Journals (Sweden)

    Jones Aled

    1998-01-01

    Full Text Available We present a brief review of current theory and observations of the cosmic microwave background (CMB. New predictions for cosmological defect theories and an overview of the inflationary theory are discussed. Recent results from various observations of the anisotropies of the microwave background are described and a summary of the proposed experiments is presented. A new analysis technique based on Bayesian statistics that can be used to reconstruct the underlying sky fluctuations is summarised. Current CMB data is used to set some preliminary constraints on the values of fundamental cosmological parameters $Omega$ and $H_circ$ using the maximum likelihood technique. In addition, secondary anisotropies due to the Sunyaev-Zel'dovich effect are described.

  10. Microwave Processing of Materials

    Science.gov (United States)

    1994-01-01

    Pennsylvania: Materials Research Society. Wagner, C., and W. Schottky. 1930. Zeitschrift fuer Physikalische Chemie. BL11:163. Walkiewicz, J. W., A. E. Clark...Science and Engineering. 66:468--469. Bloch, F. 1928. Zeitschrift fuer Physik. 52:555. Boch, P., N. Lequeux and P. Piluso. 1992. Reaction Sintering...Frankel, J. 1926. Zeitschrift fuer Physik. 35:652. Fukushima, H., T. Yamaka, and M. Matsui. 1990. Microwave Heating of Ceramics and its Application to

  11. SUNIST Microwave Power System

    Institute of Scientific and Technical Information of China (English)

    Feng Songlin; Yang Xuanzong; Feng Chunhua; Wang Long; Rao Jun; Feng Kecheng

    2005-01-01

    Experiments on the start-up and formation of spherical tokamak plasmas by electron cyclotron heating alone without ohmic heating and electrode discharge assisted electron cyclotron wave current start-up will be carried out on the SUNIST (Sino United Spherical Tokamak) device.The 2.45 GHz/100 kW/30 ms microwave power system and 1000 V/50 A power supply for electrode discharge are ready for experiments with non-inductive current drive.

  12. Microwave Multicomponent Synthesis

    Directory of Open Access Journals (Sweden)

    Helmut M. Hügel

    2009-12-01

    Full Text Available In the manner that very important research is often performed by multidisciplinary research teams, the applications of multicomponent reactions involving the combination of multiple starting materials with different functional groups leading to the higher efficiency and environmentally friendly construction of multifunctional/complex target molecules is growing in importance. This review will explore the advances and advantages in microwave multicomponent synthesis (MMS that have been achieved over the last five years.

  13. 利用微波消解-无银催化法检测水中化学需氧量%Detection of chemical oxygen demand (CODcr) in water with silver-free catalyst by microwave digestion method

    Institute of Scientific and Technical Information of China (English)

    薛文平; 刘文伟; 黄德智; 元世勇

    2011-01-01

    研究了采用微波消解-无银催化测定CODCr的新方法,并探讨了该方法测定CODCr时样品消解条件对检测结果的影响;实验还采用硫酸锰、硫酸镍、硫酸铜、硫酸镁、硫酸铁分别作催化剂,微波加热快速消解后测定CODCr,同时与国家标准方法测定结果进行比较,确定了最佳催化剂、最佳投加量和消解时间.对比结果表明:当试样体积为5 mL时,O.250 mol/L K2 Cr2O7的用量为5 mL,硫酸锰催化剂用量为3 mg,微波消解时间仅为3 min,检测结果最佳.该方法具有快速准确、节约试剂、降低耗电成本等优点.%This paper studied a new method for determining CODcr with silver-free catalyst by microwave digestion method and discussed the influences of digestion conditions on the detection results.This experiment used manganese sulfate, nickel sulfate, cupric sulfate, magnesium sulfate and ferric sulfate as catalyst respectively, and determined CODcr after microwave fast digestion.By comparing the obtained CODcr value with that determined by the national standard method, the optimal catalyst, dosage and digestion time was determined.Comparative results showed that: when the volume of the sample was 5 mL, the volume of 0.250 mol/L K2Cr2O7 was 5 mL, the amount of manganese sulfate catalyst was 3 mg and the microwave digestion time was 3 min, the results were the best.The method was quick, accurate, low consumption of reagent and power.

  14. Microwave sterilization method and apparatus

    OpenAIRE

    V. N. Vasilenko; Minuhin, V. V.; Podorozhnyak, A. A.; Trubaev, S. I.

    1995-01-01

    Experience of industrially developed countries in utilization of microwave radiation has been analyzed. Apparatus for realization of microwave method of sterilization has been designed. A number of experiments for the estimation of bactericidal, sporacidal, and virusidal properties of microwave radiation action has been carried out in 3 to 13 cm wavelength band. B. Lycheniform shtumm G., B. Subtilis ATTC 6633, E. Coli ATTC 25922 and bacterial virus FX 174 were used as test microbes. Effect of...

  15. Introduction to Microwave Linear [Accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Whittum, David H

    1999-01-04

    The elements of microwave linear accelerators are introduced starting with the principles of acceleration and accelerating structures. Considerations for microwave structure modeling and design are developed from an elementary point of view. Basic elements of microwave electronics are described for application to the accelerator circuit and instrumentation. Concepts of beam physics are explored together with examples of common beamline instruments. Charged particle optics and lattice diagnostics are introduced. Considerations for fixed-target and colliding-beam experimentation are summarized.

  16. Numerical modeling of microwave heating

    Directory of Open Access Journals (Sweden)

    Shukla A.K.

    2010-01-01

    Full Text Available The present study compares the temperature distribution within cylindrical samples heated in microwave furnace with those achieved in radiatively-heated (conventional furnace. Using a two-dimensional finite difference approach the thermal profiles were simulated for cylinders of varying radii (0.65, 6.5, and 65 cm and physical properties. The influence of susceptor-assisted microwave heating was also modeled for the same. The simulation results reveal differences in the heating behavior of samples in microwaves. The efficacy of microwave heating depends on the sample size and its thermal conductivity.

  17. Low-pressure plasma enhanced immobilization of chitosan on low-density polyethylene for bio-medical applications

    Science.gov (United States)

    Pandiyaraj, K. Navaneetha; Ferraria, Ana Maria; Rego, Ana Maria Botelho do; Deshmukh, Rajendra. R.; Su, Pi-Guey; Halleluyah Mercy, Jr.; Halim, Ahmad Sukari

    2015-02-01

    With the aim of improving blood compatibility of low density polyethylene (LDPE) films, an effective low-pressure plasma technology was employed to functionalize the LDPE film surfaces through in-situ grafting of acrylic acid (AAc). Subsequently, the molecules of poly(ethylene glycol) (PEG) and chitosan (CHI) were immobilized on the surface of grafted LDPE films. The unmodified and modified LDPE films were analyzed using various characterization techniques such as contact angle, atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR) and X-ray photo electron spectroscopy (XPS) to understand the changes in surface properties such as hydrophilicity, surface topography and chemical composition, respectively. Furthermore, LDPE films have been subjected to an ageing process to determine the durability of the plasma assisted surface modification. The blood compatibility of the surface modified LDPE films was confirmed by in vitro tests. It was found that surface modified LDPE films show better hydrophilic behavior compared with the unmodified one. FTIR and XPS results confirm the successful immobilization of CHI on the surface of LDPE films. LDPE films showed marked morphological changes after grafting of AAc, PEG and CHI which were confirmed through AFM imaging. The in vitro blood compatibility tests have clearly demonstrated that CHI immobilized LDPE films exhibit remarkable anti thrombogenic nature compared with other modified films. Surface modified LDPE films through low-pressure plasma technique could be adequate for biomedical implants such as artificial skin substrates, urethral catheters or cardiac stents, among others.

  18. The Microwave SQUID Multiplexer

    Science.gov (United States)

    Mates, John Arthur Benson

    2011-12-01

    This thesis describes a multiplexer of Superconducting Quantum Interference Devices (SQUIDs) with low-noise, ultra-low power dissipation, and great scalability. The multiplexer circuit measures the magnetic flux in a large number of unshunted rf SQUIDs by coupling each SQUID to a superconducting microwave resonator tuned to a unique resonance frequency and driving the resonators from a common feedline. A superposition of microwave tones measures each SQUID simultaneously using only two coaxial cables between the cryogenic device and room temperature. This multiplexer will enable the instrumentation of arrays with hundreds of thousands of low-temperature detectors for new applications in cosmology, materials analysis, and nuclear non-proliferation. The driving application of the Microwave SQUID Multiplexer is the readout of large arrays of superconducting transition-edge sensors, by some figures of merit the most sensitive detectors of electromagnetic signals over a span of more than nine orders of magnitude in energy, from 40 GHz microwaves to 200 keV gamma rays. Modern transition-edge sensors have noise-equivalent power as low as 10-20 W / Hz1/2 and energy resolution as good as 2 eV at 6 keV. These per-pixel sensitivities approach theoretical limits set by the underlying signals, motivating a rapid increase in pixel count to access new science. Compelling applications, like the non-destructive assay of nuclear material for treaty verification or the search for primordial gravity waves from inflation use arrays of these detectors to increase collection area or tile a focal plane. We developed three generations of SQUID multiplexers, optimizing the first for flux noise 0.17 muPhi0 / Hz1/2, the second for input current noise 19 pA / Hz1/2, and the last for practical multiplexing of large arrays of cosmic microwave background polarimeters based on transition-edge sensors. Using the last design we demonstrated multiplexed readout of prototype polarimeters with the

  19. Non-Ionizing Radiation Used in Microwave Ovens

    Science.gov (United States)

    ... in Microwave Ovens Non-Ionizing Radiation Used in Microwave Ovens Explore the interactive, virtual community of RadTown USA ! ... learn more About Non-Ionizing Radiation Used in Microwave Ovens Microwave Oven. Microwave ovens use electromagnetic waves that ...

  20. Microwaves in chemistry: Another way of heating reaction mixtures

    Science.gov (United States)

    Berlan, J.

    1995-04-01

    The question of a possible "microwave activation" of chemical reaction is discussed. In fact two cases should be distinguished: homogeneous or heterogeneous reaction mixtures. In homogeneous mixtures there are no (or very low) rate enhancements compared to a conventional heating, but some influence on chemioselectivity has been observed. These effects derive from fast and mass heating of microwaves, and probably, especially under reflux, from different boiling rates and/or overheating. With heterogeneous mixtures non conventional effects probably derive from mass heating and selective overheating. This is illustrated with several reactions: Diels-Alder, naphthalene sulphonation, preparation of cyanuric acid, hydrolysis of nitriles, transposition reaction on solid support.

  1. Electromagnetic and microwave absorbing properties of hollow carbon nanospheres

    Indian Academy of Sciences (India)

    Tianchun Zou; Haipeng Li; Naiqin Zhao; Chunsheng Shi

    2013-04-01

    A mass of hollow carbon nanospheres (HCNSs) was fabricated by chemical vapour deposition of methane over Ni/Al2O3 catalyst at 600 °C. The products were characterized with high-resolution transmission electron microscope images, and the results showed that the external diameter of the HCNSs was 5–90nm and the thickness of wall was about 10 nm. Microwave absorption of HCNSs/paraffin composites was mainly attributed to dielectric loss. The microwave-absorbing peaks of composites containing HCNSs shifts to low frequencies, and the bandwidth below −10 dB and minimum RL decrease with increasing thickness of HCNSs/paraffin composites.

  2. Ferric Oxide from Hematite Used in Microwave Ferrite Material

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Ferric Oxide is an essential and raw material in the production of ferrite materials. At present, ferric oxide used by many domestic factories is mainly produced by chemical method. In this paper, we use ferric oxide refined from hematite and applied in the microwave ferrite material production test. Compared with the normal ferric oxide, we get the same or similar results. It shows that ferric oxide from hematite and applied in the microwave ferrite material production test. Compared with the normal ferric oxide, we get the same or similar results. It shows that ferric oxide from hematite has a bright application prospect.

  3. Microwave absorption by nanoresonator vibrations tuned with surface modification

    Science.gov (United States)

    Krivosudský, Ondrej; Cifra, Michal

    2016-08-01

    Elucidating the physical and chemical parameters that govern viscous damping of nanoresonator vibrations and their coupling to electromagnetic radiation is important for understanding the behavior of matter at the nanoscale. Here we develop an analytical model of microwave absorption of a longitudinally oscillating and electrically polar rod-like nanoresonator embedded in a viscoelastic fluid. We show that the slip length, which can be tuned via surface modifications, controls the quality factor and coupling of nanoresonator vibration modes to microwave radiation. We demonstrate that the larger slip length brings the sharper frequency response of the nanoresonator vibration and electromagnetic absorption. Our findings contribute to design guidelines of fluid embedded nanoresonator devices.

  4. Microwave Plasma System: PVA Tepla 300

    Data.gov (United States)

    Federal Laboratory Consortium — Description: CORAL Name: Microwave Asher A tool using microwave oxygen plasma to remove organics on the surfaces Specifications / Capabilities: Frequency: 2.45 GHz...

  5. Low-pressure plasma enhanced immobilization of chitosan on low-density polyethylene for bio-medical applications

    Energy Technology Data Exchange (ETDEWEB)

    Pandiyaraj, K. Navaneetha, E-mail: dr.knpr@gmail.com [Surface Engineering Laboratory, Department of Physics, Sri Shakthi Institute of Engineering and Technology, L& T by pass, Chinniyam Palayam (post), Coimbatore, 641062 (India); Ferraria, Ana Maria; Rego, Ana Maria Botelho do [Centro de Química- Física Molecular and Institute of Nanoscience and Nanotechnology, Instituto Superior Técnico, University of Lisbon (Portugal); Deshmukh, Rajendra R. [Department of Physics, Institute of Chemical Technology, Matunga, Mumbai 400 019 (India); Su, Pi-Guey [Department of Chemistry, Chinese Culture University, Taipei 111, Taiwan (China); Halleluyah, Jr. Mercy; Halim, Ahmad Sukari [Reconstructive Science Unit, School of Medical Sciences, Health Campus, Universiti Sains Malaysia, 16150 Kubang Kerian, Kelantan (Malaysia)

    2015-02-15

    Highlights: • Acrylic acid (AAc) was grafted on LDPE film by in situ plasma polymerization. • Molecules of PEG and chitosan were immobilized on AAc grafted LDPE films. • Surface modified LDPE exhibits excellent hydrophilic property. • Surface modified LDPE resist the adsorption of protein and adhesion of platelets. - Abstract: With the aim of improving blood compatibility of low density polyethylene (LDPE) films, an effective low-pressure plasma technology was employed to functionalize the LDPE film surfaces through in-situ grafting of acrylic acid (AAc). Subsequently, the molecules of poly(ethylene glycol) (PEG) and chitosan (CHI) were immobilized on the surface of grafted LDPE films. The unmodified and modified LDPE films were analyzed using various characterization techniques such as contact angle, atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR) and X-ray photo electron spectroscopy (XPS) to understand the changes in surface properties such as hydrophilicity, surface topography and chemical composition, respectively. Furthermore, LDPE films have been subjected to an ageing process to determine the durability of the plasma assisted surface modification. The blood compatibility of the surface modified LDPE films was confirmed by in vitro tests. It was found that surface modified LDPE films show better hydrophilic behavior compared with the unmodified one. FTIR and XPS results confirm the successful immobilization of CHI on the surface of LDPE films. LDPE films showed marked morphological changes after grafting of AAc, PEG and CHI which were confirmed through AFM imaging. The in vitro blood compatibility tests have clearly demonstrated that CHI immobilized LDPE films exhibit remarkable anti thrombogenic nature compared with other modified films. Surface modified LDPE films through low-pressure plasma technique could be adequate for biomedical implants such as artificial skin substrates, urethral catheters or cardiac stents

  6. The European Microwave Week 2008 and its Microwave Conferences

    NARCIS (Netherlands)

    Hoogeboom, P.; Van Vliet, F.

    2009-01-01

    Under the auspices of the European Microwave Association (EuMA) the 11th annual European Microwave Week was organized in the Amsterdam RAI Congress Centre, The Netherlands, 27-31 October 2008. This major event consisted this year of five conferences, an exhibition, and various side events. The 38th

  7. Aquecimento em forno de microondas / desenvolvimento de alguns conceitos fundamentais Heating in microwave ovens/ developing of basic concepts

    Directory of Open Access Journals (Sweden)

    Ana Claudia R. N. Barboza

    2001-12-01

    Full Text Available The microwave oven became a common domestic equipment, due mainly to the short time spent to heat foods. One of the most interesting characteristics of the microwave oven is the selective heating. Different from the conventional oven, where the heating is not selective, the heating by microwave depends on the chemical nature of the matter. Many Students of Chemistry have no knowledge of the principles involved in this selective heating, in spite of the daily microwave oven use. The heating by microwave is feasible for chemistry courses. In discussions about the microwave absorption by the matter it is possible to explore chemical properties like: heat capacity, chemical bound, molecular structure, dipole moments, polarization and dielectric constant. This paper presents the basic principles involved in the microwave heating. It is proposed a simple and inexpensive experiment that could be developed in general chemistry courses, to illustrate the relationship between heating and the chemical properties of some solvents. Experiments to check the power of the microwave oven are also proposed.

  8. A microwave-irradiated Streptococcus agalactiae vaccine provides partial protection against experimental challenge in Nile tilapia, Oreochromis niloticus

    Science.gov (United States)

    Microwave irradiation, as opposed to formalin exposure, has not routinely been used in the preparation of killed vaccines despite the advantages of decreased chemical toxicity, ability to kill cells quickly, ease of completion requiring only a standard microwave, and potential increased protein cons...

  9. Microwave Sterilization in School Microbiology.

    Science.gov (United States)

    Wynn, Brian; Dixon, Angela

    1988-01-01

    Described are two investigations carried out in a high school biology department using a domestic microwave oven to compare the relative attributes of the autoclave and microwave oven in school use. Discussed are equipment, methods, and results of each investigation. (Author/CW)

  10. More Experiments with Microwave Ovens

    Science.gov (United States)

    Vollmer, Michael; Mollmann, Klaus-Peter; Karstadt, Detlef

    2004-01-01

    Microwave ovens can be used to perform exciting demonstrations that illustrate a variety of physics topics. Experiments discussed here show superheating, visualize the inhomogeneous heating that takes place in a microwave and also show how to use a mobile phone to detect radiation leaking from the oven. Finally eggs can give some spectacular…

  11. More Experiments with Microwave Ovens

    Science.gov (United States)

    Vollmer, Michael; Mollmann, Klaus-Peter; Karstadt, Detlef

    2004-01-01

    Microwave ovens can be used to perform exciting demonstrations that illustrate a variety of physics topics. Experiments discussed here show superheating, visualize the inhomogeneous heating that takes place in a microwave and also show how to use a mobile phone to detect radiation leaking from the oven. Finally eggs can give some spectacular…

  12. Beamed microwave power transmission and its application to space

    Science.gov (United States)

    Brown, William C.; Eves, E. E.

    1992-01-01

    The general principles and special components of beamed microwave power transmission systems are outlined and their application to the space program are discussed. The beamed system is defined as starting with a dc source of power at the transmitting end, converting it to a microwave beam for transmission through space, and ending with the dc power output at the receiving end. An experimentally measured and certified dc-to-dc efficiency of 54 percent has been achieved, using this definition. The application discussed is that of a LEO to GEO transportation system that depends upon vehicles propelled by electric thrusters whose power is supplied by a microwave beam originating at the earth's surface. The advantages of the all-electronic system over a chemically propelled system are enumerated. The principles of space propulsion, particularly as they relate to electric propulsion, are outlined. Key components of the system and environmental considerations are discussed.

  13. Optimization of microwave pretreatment on wheat straw for ethanol production

    DEFF Research Database (Denmark)

    Xu, Jian; Chen, Hongzhang; Kádár, Zsófia

    2011-01-01

    An orthogonal design (L9(34)) was used to optimize the microwave pretreatment on wheat straw for ethanol production. The orthogonal analysis was done based on the results obtained from the nine pretreatments. The effect of four factors including the ratio of biomass to NaOH solution, pretreatment...... time, microwave power, and the concentration of NaOH solution with three different levels on the chemical composition, cellulose/hemicellulose recoveries and ethanol concentration was investigated. According to the orthogonal analysis, pretreatment with the ratio of biomass to liquid at 80 g kg−1......, the NaOH concentration of 10 kg m−3, the microwave power of 1000 W for 15 min was confirmed to be the optimal condition. The ethanol yield was 148.93 g kg−1 wheat straw at this condition, much higher than that from the untreated material which was only 26.78 g kg−1....

  14. Passive Microwave Components and Antennas

    DEFF Research Database (Denmark)

    State-of-the-art microwave systems always require higher performance and lower cost microwave components. Constantly growing demands and performance requirements of industrial and scientific applications often make employing traditionally designed components impractical. For that reason, the design...... and development process remains a great challenge today. This problem motivated intensive research efforts in microwave design and technology, which is responsible for a great number of recently appeared alternative approaches to analysis and design of microwave components and antennas. This book highlights...... techniques. Modelling and computations in electromagnetics is a quite fast-growing research area. The recent interest in this field is caused by the increased demand for designing complex microwave components, modeling electromagnetic materials, and rapid increase in computational power for calculation...

  15. Passive Microwave Components and Antennas

    DEFF Research Database (Denmark)

    techniques. Modelling and computations in electromagnetics is a quite fast-growing research area. The recent interest in this field is caused by the increased demand for designing complex microwave components, modeling electromagnetic materials, and rapid increase in computational power for calculation......State-of-the-art microwave systems always require higher performance and lower cost microwave components. Constantly growing demands and performance requirements of industrial and scientific applications often make employing traditionally designed components impractical. For that reason, the design...... and development process remains a great challenge today. This problem motivated intensive research efforts in microwave design and technology, which is responsible for a great number of recently appeared alternative approaches to analysis and design of microwave components and antennas. This book highlights...

  16. Microwave plasma combustion of coal

    Energy Technology Data Exchange (ETDEWEB)

    P.M. Kanilo; V.I. Kazantsev; N.I. Rasyuk; K. Schuenemann; D.M. Vavriv [Institute of Machine Building Problems of the National Academy of Sciences of Ukraine, Kharkov (Ukraine)

    2003-01-01

    Microwave plasma is studied as an alternative to oil or gas fuel for ignition and stabilisation of burning of lean coal. The study is performed on an experimental set-up, which includes a burner with a microwave plasma generator, coal and air supply systems, and measurement equipment. Power and thermochemical characteristics of the coal-plasma interaction have been measured and analysed. The obtained results indicate an essential intensification of ignition and combustion processes in the microwave burner compared to those in conventional burners. In particular, it has been demonstrated that the microwave energy consumption is only about 10% of the required expenditure of oil or gas, measured in heat equivalent. A design of an industrial microwave-plasma burner is proposed. Prospects of such burner for applications at industrial boilers of power plants are discussed. 6 refs., 4 figs., 2 tabs.

  17. Microwave-Accelerated Organic Reactions

    Institute of Scientific and Technical Information of China (English)

    LU; TaJung

    2001-01-01

    The use of microwave technology in accelerating organic reactions has received intense attention leading to immense growth recently. Accordingly, we have been interested in improving the efficacy of organic processes by microwave irradiation. Here we report our results on the microwave assisted 1,3-dipolar cycloaddition reaction of nitrile oxides with allylic alcohols, the cleavage reaction of 1,3-diketones under alkaline conditions, and the formation of carbamates from isocyanates with alcohols. The reactions carried out under microwave irradiation, in general, required considerably less reaction time and afforded the desired products in higher yields than those under classical conditions. In all the cases we have studied, the procedures are simplified, the purity of the products are higher, and the cost of reaction is greatly reduced employing microwave.  ……

  18. Microwave-Accelerated Organic Reactions

    Institute of Scientific and Technical Information of China (English)

    LU TaJung

    2001-01-01

    @@ The use of microwave technology in accelerating organic reactions has received intense attention leading to immense growth recently. Accordingly, we have been interested in improving the efficacy of organic processes by microwave irradiation. Here we report our results on the microwave assisted 1,3-dipolar cycloaddition reaction of nitrile oxides with allylic alcohols, the cleavage reaction of 1,3-diketones under alkaline conditions, and the formation of carbamates from isocyanates with alcohols. The reactions carried out under microwave irradiation, in general, required considerably less reaction time and afforded the desired products in higher yields than those under classical conditions. In all the cases we have studied, the procedures are simplified, the purity of the products are higher, and the cost of reaction is greatly reduced employing microwave.

  19. Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE

    Energy Technology Data Exchange (ETDEWEB)

    Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che; Hassan, Haslan Abu; Abdullah, Mat Johar [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia and Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia); Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia)

    2012-06-29

    GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.

  20. Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology

    Energy Technology Data Exchange (ETDEWEB)

    Burke, Micheal, E-mail: micheal.burke@tyndall.ie; Blake, Alan; Povey, Ian M.; Schmidt, Michael; Petkov, Nikolay; Carolan, Patrick; Quinn, Aidan J., E-mail: aidan.quinn@tyndall.ie [Tyndall National Institute, University College Cork, Cork (Ireland)

    2014-05-15

    A design of experiments methodology was used to optimize the sheet resistance of titanium nitride (TiN) films produced by plasma-enhanced atomic layer deposition (PE-ALD) using a tetrakis(dimethylamino)titanium precursor in a N{sub 2}/H{sub 2} plasma at low temperature (250 °C). At fixed chamber pressure (300 mTorr) and plasma power (300 W), the plasma duration and N{sub 2} flow rate were the most significant factors. The lowest sheet resistance values (163 Ω/sq. for a 20 nm TiN film) were obtained using plasma durations ∼40 s, N{sub 2} flow rates >60 standard cubic centimeters per minute, and purge times ∼60 s. Time of flight secondary ion mass spectroscopy data revealed reduced levels of carbon contaminants in the TiN films with lowest sheet resistance (163 Ω/sq.), compared to films with higher sheet resistance (400–600 Ω/sq.) while transmission electron microscopy data showed a higher density of nanocrystallites in the low-resistance films. Further significant reductions in sheet resistance, from 163 Ω/sq. to 70 Ω/sq. for a 20 nm TiN film (corresponding resistivity ∼145 μΩ·cm), were achieved by addition of a postcycle Ar/N{sub 2} plasma step in the PE-ALD process.