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Sample records for microcrystalline silicon tfts

  1. Ambipolar characteristics of microcrystalline silicon thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Chan, Kah-Yoong [IEF5-Photovoltaics, Research Center Juelich, 52425 Juelich (Germany); School of Engineering and Science, Jacobs University Bremen, 28759 Bremen (Germany); Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia); Gordijn, Aad [IEF5-Photovoltaics, Research Center Juelich, 52425 Juelich (Germany); Stiebig, Helmut [IEF5-Photovoltaics, Research Center Juelich, 52425 Juelich (Germany); Malibu GmbH and Co. KG, 33609 Bielefeld (Germany); Knipp, Dietmar [School of Engineering and Science, Jacobs University Bremen, 28759 Bremen (Germany)

    2010-04-15

    Hydrogenated microcrystalline silicon ({mu}c-Si:H) has recently attracted significant attention as a promising candidate for thin-film transistors (TFTs) in large-area electronics due to high electron and hole charge carrier mobilities. We report on top-gate ambipolar TFTs based on {mu}c-Si:H prepared by plasma-enhanced chemical vapor deposition at temperatures below 200 C. Electrons and holes are directly injected into the {mu}c-Si:H channel via chromium drain and source contacts. The TFTs exhibit electron and hole charge carrier mobilities of 30-50 cm{sup 2}/Vs and 10-15 cm{sup 2}/Vs, respectively. In this work, the electrical characteristics of the top-gate ambipolar {mu}c-Si:H TFTs are described by a simple analytical model that takes the ambipolar transport into account. The analytical expressions are used to model the transfer curves, the potential and the net surface charge along the channel of the TFTs. The electrical model provides insights into the electronic transport of ambipolar {mu}c-Si:H TFTs (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Logic Gates and Ring Oscillators Based on Ambipolar Nanocrystalline-Silicon TFTs

    Directory of Open Access Journals (Sweden)

    Anand Subramaniam

    2013-01-01

    Full Text Available Nanocrystalline silicon (nc-Si thin film transistors (TFTs are well suited for circuit applications that require moderate device performance and low-temperature CMOS-compatible processing below 250°C. Basic logic gate circuits fabricated using ambipolar nc-Si TFTs alone are presented and shown to operate with correct outputs at frequencies of up to 100 kHz. Ring oscillators consisting of nc-Si TFT-based inverters are also shown to operate at above 20 kHz with a supply voltage of 5 V, corresponding to a propagation delay of 5 V for several hours.

  3. Carbon-nanotube electron-beam (C-beam) crystallization technique for silicon TFTs

    Science.gov (United States)

    Lee, Su Woong; Kang, Jung Su; Park, Kyu Chang

    2016-02-01

    We introduced a carbon-nanotube (CNT) electron beam (C-beam) for thin film crystallization and thin film transistor (TFT) applications. As a source of electron emission, a CNT emitter which had been grown on a silicon wafer with a resist-assisted patterning (RAP) process was used. By using the C-beam exposure, we successfully crystallized a silicon thin film that had nano-sized crystalline grains. The distribution of crystalline grain size was about 10 ˜ 30 nm. This nanocrystalline silicon thin film definitely had three crystalline directions which are (111), (220) and (311), respectively. The silicon TFTs crystallized by using a C-beam exposure showed a field effect mobility of 20 cm2/Vs and an on/off ratio of more than 107. The C-beam exposure can modify the bonding network of amorphous silicon with its proper energy.

  4. Stability of thin films of microcrystalline silicon under light soaking

    Institute of Scientific and Technical Information of China (English)

    HAN Xiao-yan; Wang Yan; XUE Jun-ming; ZHAO Shu-wen; REN Hui-zhi; ZHAO Ying; LI Yang-xian; GENG Xin-hua

    2006-01-01

    Silicon thin films with different crystalline ratio(Xc) have been deposited by varying silane content(SC) of reactive gases in the RF-PECVD process.The effects of silane content on performance of the materials and the relationship between microstructure and opto-electronic properties were studied by means of Raman measurements,photoconductivity(σph),and dark conductivity(σd),followed by the measurements of light absorption coefficient(α),the product of quantum efficiency,mobility and lifetime (ημτ),before,during and after light soaking,respectively.The results indicate that the microcrystalline silicon near the transition region is suitable to prepare microcrystalline silicon of device grade,and that the amorphous region of the material is responsible to the light induced degradation.

  5. Carrier mobility, band tails and defects in microcrystalline silicon

    Science.gov (United States)

    Reynolds, Steve

    2010-11-01

    The development of microcrystalline silicon thin films and devices is briefly reviewed. Transport mechanisms, and the attendant key parameters of carrier mobility, band-tail width and defect density, are linked to film structure and composition. In particular we discuss the wide (but systematic) variations in time-of-flight mobility and its unusual field-dependence. While microcrystalline silicon remains an inferior semiconductor to single-crystal silicon, we propose, and support by means of a computer model, that present device-grade material may be of sufficient quality to justify re-examining whether useful thin-film bipolar devices might be developed. These could find application as more sensitive photo-detectors, and as current drivers in organic LED displays and logic circuits.

  6. Preparation of microcrystalline single junction and amorphous-microcrystalline tandem silicon solar cells entirely by hot-wire CVD

    Energy Technology Data Exchange (ETDEWEB)

    Kupich, M.; Grunsky, D.; Kumar, P.; Schroeder, B. [University of Kaiserslautern (Germany). Department of Physics

    2004-01-25

    The hot-wire chemical vapour deposition (HWCVD) has been used to prepare highly conducting p- and n-doped microcrystalline silicon thin layers as well as highly photoconducting, low defect density intrinsic microcrystalline silicon films. These films were incorporated in all-HWCVD, all-microcrystalline nip and pin solar cells, achieving conversion efficiencies of {eta}=5.4% and 4.5%, respectively. At present, only the nip-structures are found to be stable against light-induced degradation. Furthermore, microcrystalline nip and pin structures have been successfully incorporated as bottom cells in all-hot-wire amorphous-microcrystalline nipnip- and pinpin-tandem solar cells for the first time. So far, the highest conversion efficiencies of the 'micromorph' tandem structures are {eta}=5.7% for pinpin-solar cells and 7.0% for nipnip solar cells. (author)

  7. Development of Doped Microcrystalline Silicon Oxide and its Application to Thin‑Film Silicon Solar Cells

    NARCIS (Netherlands)

    Lambertz, A.

    2015-01-01

    The aim of the present study is the development of doped microcrystalline silicon oxide (µc‑SiOx:H) alloys and its application in thin‑film silicon solar cells. The doped µc‑SiOx:H material was prepared from carbon dioxide (CO2), silane (SiH4), hydrogen (H2) gas mixtures using plasma enhanced

  8. Development of Doped Microcrystalline Silicon Oxide and its Application to Thin‑Film Silicon Solar Cells

    NARCIS (Netherlands)

    Lambertz, A.

    2015-01-01

    The aim of the present study is the development of doped microcrystalline silicon oxide (µc‑SiOx:H) alloys and its application in thin‑film silicon solar cells. The doped µc‑SiOx:H material was prepared from carbon dioxide (CO2), silane (SiH4), hydrogen (H2) gas mixtures using plasma enhanced chemic

  9. High Mobility Microcrystalline Silicon Thin-Film Transistors%基于高迁移率微晶硅的薄膜晶体管

    Institute of Scientific and Technical Information of China (English)

    CHAN Kah-Yoong; Eerle Bunte; Helmut Stiebig; Dietmar Knipp

    2008-01-01

    Microcrystalline silicon (μc-Si: H) has recently been proven to be a promising material for thin- film transistors (TFTs). We present μc-Si.H TFTs fabricated by plasma-enhanced chemical vapor deposi-tion at temperatures below 200℃ in a condition similar to the fabrication of amorphous silicon TFTs. The μc-Si. H TFTs exhibit device mobilities exceeding 30 cm2/Vs and threshold voltages in the range of 2.5 V.Such high mobilities are observed for long channel devices (50~200 μm). For short channel device (2μm), the mobility reduces to 7 cm2/Vs. Furthermore the threshold voltage of the TFTs decreases with de-creasing channel length. A simple model is developed, which explains the observed reduction of the device mobility and threshold voltage with decreasing channel length by the influence of drain and source contact resistance.%近年来,微晶硅(μc-Si:H)被认为是一种制作 TFT 的有前景的材料.采用PECVD法,在低于200℃时制作了微晶硅TFTs,其制作条件类似于非晶态 TFTs.微晶硅 TFTs 器件的迁移率超过了 30 cm2/Vs,而阈值电压是 2.5 V.在长沟道器件(50~200 μm)中观测到了这种高迁移率.但对于短沟道器件(2 μm),迁移率就降低到了7 cm2/Vs.此外,该 TFTs 的阈值电压随着沟道长度的减少而增大.文章采用了一种简单模型解释了迁移率、阈值电压随着沟道长度的缩短而分别减少、增加的原因在于源漏接触电阻的影响.

  10. Numerical simulations for the effiency improvement of hybrid dye-microcrystalline silicon pin-solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Burdorf, Sven; Bauer, Gottfried Heinrich; Brueggemann, Rudolf [Institut fuer Physik, Carl von Ossietzky Universitaet, Oldenburg (Germany)

    2011-07-01

    Hybrid solar cells consisting of dye sensitizers incorporated in the i-layer of microcrystalline silicon pin solar cell have been proposed and even recently processed. The dye sensitizer molecules are embedded in the matrix and enhance the overall absorption of the dye-matrix system due to their high absorption coefficient in the spectral range interesting for photovoltaic applications. However, the charge transport properties of dyes are quite poor. Microcrystalline silicon on the other hand has acceptable charge transport properties, while the absorption, given a layer thickness in the micron range, is relatively poor. This contribution investigates the effiency improvement of hybrid dye-microcrystalline solar cells compared to pure microcrystalline solar cells by simulation. The results indicate that, under optimal conditions, the effiency can be improved by more than 20 % compared to a pure microcrystalline silicon cell. The thickness reduction for the hybrid system can be as large as 50 % for the same effiency.

  11. Solution growth of microcrystalline silicon on amorphous substrates

    Energy Technology Data Exchange (ETDEWEB)

    Heimburger, Robert

    2010-07-05

    This work deals with low-temperature solution growth of micro-crystalline silicon on glass. The task is motivated by the application in low-cost solar cells. As glass is an amorphous material, conventional epitaxy is not applicable. Therefore, growth is conducted in a two-step process. The first step aims at the spatial arrangement of silicon seed crystals on conductive coated glass substrates, which is realized by means of vapor-liquid-solid processing using indium as the solvent. Seed crystals are afterwards enlarged by applying a specially developed steady-state solution growth apparatus. This laboratory prototype mainly consists of a vertical stack of a silicon feeding source and the solvent (indium). The growth substrate can be dipped into the solution from the top. The system can be heated to a temperature below the softening point of the utilized glass substrate. A temperature gradient between feeding source and growth substrate promotes both, supersaturation and material transport by solvent convection. This setup offers advantages over conventional liquid phase epitaxy at low temperatures in terms of achievable layer thickness and required growth times. The need for convective solute transport to gain the desired thickness of at least 50 {mu}m is emphasized by equilibrium calculations in the binary system indium-silicon. Material transport and supersaturation conditions inside the utilized solution growth crucible are analyzed. It results that the solute can be transported from the lower feeding source to the growth substrate by applying an appropriate heating regime. These findings are interpreted by means of a hydrodynamic analysis of fluid flow and supporting FEM simulation. To ensure thermodynamic stability of all materials involved during steady-state solution growth, the ternary phase equilibrium between molybdenum, indium and silicon at 600 C was considered. Based on the obtained results, the use of molybdenum disilicide as conductive coating

  12. Optical emission spectroscopy study on deposition process of microcrystalline silicon

    Institute of Scientific and Technical Information of China (English)

    Wu Zhi-Meng; Lei Qing-Song; Geng Xin-Hua; Zhao Ying; Sun Jian; Xi Jian-Ping

    2006-01-01

    This paper reports that the optical emission spectroscopy (OES) is used to monitor the plasma during the deposition process of hydrogenated microcrystalline silicon films in a very high frequency plasma enhanced chemical vapour deposition system. The OES intensities (SiH*, H*α and H*β) are investigated by varying the deposition parameters. The result shows that the discharge power, silane concentrations and substrate temperature affect the OES intensities. When the discharge power at silane concentration of 4% increases, the OES intensities increase first and then are constant, the intensities increase with the discharge power monotonously at silane concentration of 6%. The SiH* intensity increases with silane concentration, while the intensities of H*α and H*β increase first and then decrease. When the substrate temperature increases, the SiH* intensity decreases and the intensities of H*α and H*β are constant. The correlation between the intensity ratio of IH*α/ISiH* and the crystalline volume fraction (Xc) of films is confirmed.

  13. Microcrystalline silicon films and solar cells investigatet by photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Merdzhanova, T.

    2005-07-01

    A systematic investigation on photoluminescence (PL) properties of microcrystalline silicon ({mu}c-Si:H) films with structural composition changing from highly crystalline to predominantly amorphous is presented. The samples were prepared by PECVD and HWCVD with different silane concentration in hydrogen (SC). By using photoluminescence in combination with Raman spectroscopy the relationship between electronic properties and the microstructure of the material is studied. The PL spectra of {mu}c-Si:H reveal a rather broad ({proportional_to}0.13 eV) featureless band at about 1 eV ('{mu}c'-Si-band). In mixed phase material of crystalline and amorphous regions, a band at about 1.3 eV with halfwidth of about 0.3 eV is found in addition to '{mu}c'-Si-band, which is attributed to the amorphous phase ('a'-Si-band). Similarly to amorphous silicon, the '{mu}c'-Si-band is assigned to recombination between electrons and holes in band tail states. An additional PL band centred at about 0.7 eV with halfwidth slightly broader than the '{mu}c'-Si-band is observed only for films prepared at high substrate temperature and it is preliminarily assigned to defect-related transitions as in polycrystalline silicon. With decreasing crystalline volume fraction, the '{mu}c'-Si-band shifts continuously to higher energies for all {mu}c-Si:H films but the linewidth of the PL spectra is almost unaffected. This is valid for all deposition conditions investigated. The results are interpreted, assuming decrease of the density of band tail states with decreasing crystalline volume fraction. A simple model is proposed to simulate PL spectra and V{sub oc} in {mu}c-Si:H solar cells as a function of temperature, based on carrier distributions in quasi-equilibrium conditions. In the model is assumed symmetric density of states distributions for electrons and holes in the conduction and the valence band tail states. The best agreement between

  14. High deposition rate processes for the fabrication of microcrystalline silicon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Michard, S. [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Meier, M., E-mail: ma.meier@fz-juelich.de [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Grootoonk, B.; Astakhov, O.; Gordijn, A.; Finger, F. [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany)

    2013-05-15

    The increase of deposition rate of microcrystalline silicon absorber layers is an essential point for cost reduction in the mass production of thin-film silicon solar cells. In this work we explored a broad range of plasma enhanced chemical vapor deposition (PECVD) parameters in order to increase the deposition rate of intrinsic microcrystalline silicon layers keeping the industrial relevant material quality standards. We combined plasma excitation frequencies in the VHF band with the high pressure high power depletion regime using new deposition facilities and achieved deposition rates as high as 2.8 nm/s. The material quality evaluated from photosensitivity and electron spin resonance measurements is similar to standard microcrystalline silicon deposited at low growth rates. The influence of the deposition power and the deposition pressure on the electrical and structural film properties was investigated.

  15. Advantages of N-Type Hydrogenated Microcrystalline Silicon Oxide Films for Micromorph Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2013-01-01

    Full Text Available We report on the development and application of n-type hydrogenated microcrystalline silicon oxide films (n μc-SiO:H in hydrogenated amorphous silicon oxide/hydrogenated microcrystalline silicon (a-SiO:H/μc-Si:H micromorph solar cells. The n μc-SiO:H films with high optical bandgap and low refractive index could be obtained when a ratio of carbon dioxide (CO2 to silane (SiH4 flow rate was raised; however, a trade-off against electrical property was observed. We applied the n μc-SiO:H films in the top a-SiO:H cell and investigated the changes in cell performance with respect to the electrical and optical properties of the films. It was found that all photovoltaic parameters of the micromorph silicon solar cells using the n top μc-SiO:H layer enhanced with increasing the CO2/SiH4 ratio up to 0.23, where the highest initial cell efficiency of 10.7% was achieved. The enhancement of the open circuit voltage (Voc was likely to be due to a reduction of reverse bias at subcell connection—n top/p bottom interface—and a better tunnel recombination junction contributed to the improvement in the fill factor (FF. Furthermore, the quantum efficiency (QE results also have demonstrated intermediate-reflector function of the n μc-SiO:H films.

  16. Electron spin resonance and transient photocurrent measurements on microcrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Dylla, T.

    2004-09-01

    The electronic properties of microcrystalline silicon ({mu}c-Si:H) films have been studied using electron spin resonance (ESR), transient photocurrent time-of-flight (TOF) techniques, and electrical conductivity measurements. Structural properties were determined by Raman spectroscopy. A wide range of structure compositions, from highly crystalline films with no discernable amorphous content, to predominantly amorphous films with no crystalline phase contributions, was investigated. Models and possible explanations concerning the nature and energetic distribution of electronic defects as a function of film composition are discussed. It is shown that the spin density N{sub S} in {mu}c-Si:H films is linked strongly to the structure composition of the material. Both reversible and irreversible changes in the ESR signal and dark conductivity due to atmospheric effects are found in {mu}c-Si:H. The porous structure of highly crystalline material facilitates in-diffusion of atmospheric gases, which strongly affects the character and/or density of surface states. Two contributing processes have been identified, namely adsorption and oxidation. Both processes lead to an increase of N{sub S}. Measurements on n-type {mu}c-Si:H films were used as a probe of the density of gap states, confirming that the spin density NS is related to the density of defects. The results confirm that for a wide range of structural compositions, the doping induced Fermi level shift in {mu}c-Si:H is governed by compensation of defect states, for doping concentrations up to the dangling bond spin density. At higher concentrations a doping efficiency close to unity was found, confirming that in {mu}c-Si:H the measured spin densities represent the majority of gap states (N{sub S}=N{sub DB}). By applying the TOF technique to study pin solar cells based on {mu}c-Si:H, conclusive hole drift mobility data were obtained. Despite the predominant crystallinity of these samples, the temperature-dependence of

  17. Conventional and 360 degree electron tomography of a micro-crystalline silicon solar cell

    DEFF Research Database (Denmark)

    Duchamp, Martial; Ramar, Amuthan; Kovács, András

    2011-01-01

    Bright-field (BF) and annular dark-field (ADF) electron tomography in the transmission electron microscope (TEM) are used to characterize elongated porous regions or cracks (simply referred to as cracks thereafter) in micro-crystalline silicon (μc-Si:H) solar cell. The limitations of inferring...

  18. The statistical shift of the chemical potential causing anomalous conductivity in hydrogenated microcrystalline silicon

    NARCIS (Netherlands)

    Lof, R.W.; Schropp, R.E.I.

    2010-01-01

    The behavior of the electrical conductivity in hydrogenated microcrystalline silicon (μ c-Si:H) that is frequently observed is explained by considering the statistical shift in the chemical potential as a function of the crystalline fraction (Xc), the dangling bond density (N db), and the doping den

  19. Triplet excitons as sensitive spin probes for structure analysis of extended defects in microcrystalline silicon

    Science.gov (United States)

    Meier, Christoph; Teutloff, Christian; Behrends, Jan; Bittl, Robert; Astakhov, Oleksandr; Lips, Klaus

    2016-07-01

    Electrically detected magnetic resonance (EDMR) spectroscopy is employed to study the influence of triplet excitons on the photocurrent in state-of-the-art microcrystalline silicon thin-film solar cells. These triplet excitons are used as sensitive spin probes for the investigation of their electronic and nuclear environment in this mixed-phase material. According to low-temperature EDMR results obtained from solar cells with different microcrystalline silicon that give rise to shallow states in the silicon band gap. The excitons possess a rather delocalized wave function, couple to electron spins in conduction band tail states nearby, and take part in a spin-dependent recombination process. Our study shows that extended defects such as grain boundaries or stacking faults in the crystalline part of the material act as charge carrier traps that can influence the material conductivity.

  20. Plasma deposition of microcrystalline silicon solar cells. Looking beyond the glass

    Energy Technology Data Exchange (ETDEWEB)

    Donker, M.N. van den

    2006-07-01

    Microcrystalline silicon emerged in the past decade as highly interesting material for application in efficient and stable thin film silicon solar cells. It consists of nanometer-sized crystallites embedded in a micrometer-sized columnar structure, which gradually evolves during the SiH{sub 4} based deposition process starting from an amorphous incubation layer. Understanding of and control over this transient and multi-scale growth process is essential in the route towards low-cost microcrystalline silicon solar cells. This thesis presents an experimental study on the technologically relevant high rate (5-10 Aa s{sup -1}) parallel plate plasma deposition process of state-of-the-art microcrystalline silicon solar cells. The objective of the work was to explore and understand the physical limits of the plasma deposition process as well as to develop diagnostics suitable for process control in eventual solar cell production. Among the developed non-invasive process diagnostics were a pyrometer, an optical spectrometer, a mass spectrometer and a voltage probe. Complete thin film silicon solar cells and modules were deposited and characterized. (orig.)

  1. Silicone Rubber and Microcrystalline Cellulose Composites with Antimicrobial Properties

    Directory of Open Access Journals (Sweden)

    Virginija JANKAUSKAITĖ

    2014-04-01

    Full Text Available The goal of this study was to create polydimethylsiloxane (PDMS and microcrystalline cellulose (MCC composites with high mechanical properties and antimicrobial activity. Vinyl-terminated PDMS was mixed with bifunctional filler, which combines MCC stiffness and antimicrobial properties of silver nanoparticles. To provide antimicrobial properties the silver nanoparticles in situ were synthesized by chemical reducing method in MCC aqueous suspension. Silver nanoparticles (AgNPs concentration deposited on MCC particles surface was varied. The morphology, antimicrobial activity and mechanical properties of PDMS/MCC composites and their components have been investigated. It was shown that the combination of MCC/AgNPs as a filler and PDMS as matrix advantages bring multifunctional properties to polymer matrix composite. DOI: http://dx.doi.org/10.5755/j01.ms.20.1.4397

  2. Device simulation and modeling of microcrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Takakura, H.; Hamakawa, Y. [Ritsumeikan Univ., Shiga (Japan). Dept. of Photonics

    2002-10-01

    Device modeling for p-i-n junction basis thin film microcrystalline Si solar cells has been examined with a simple model of columnar grain structure utilizing two-dimensional device simulator. The simulation results of solar cell characteristics show that open-circuit voltage (V{sub oc}) and fill factor considerably depend on structural parameters such as grain size and acceptor doping in intrinsic layer, while short-circuit current density (J{sub sc}) is comparatively stable by built-in electric field in the i-layer. It is also found that conversion efficiency of more than 16% could be expected with 1 {sup {mu}}m grain size and well-passivated condition with 10 {sup {mu}}m thick i-layer and optical confinement. (Author)

  3. A fast method to diagnose phase transition from amorphous to microcrystalline silicon

    Institute of Scientific and Technical Information of China (English)

    HOU; GuoFu

    2007-01-01

    A series of hydrogenated silicon thin films were prepared by the radio frequency plasma enhanced chemical vapor deposition method (RF-PECVD) with various silane concentrations. The influence of silane concentration on structural and electrical characteristics of these films was investigated to study the phase transition region from amorphous to microcrystalline phase. At the same time, optical emission spectra (OES) from the plasma during the deposition process were monitored to get information about the plasma properties, Raman spectra were measured to study the structural characteristics of the deposited films. The combinatorial analysis of OES and Raman spectra results demonstrated that the OES can be used as a fast method to diagnose phase transition from amorphous to microcrystalline silicon. At last the physical mechanism, why both OES and Raman can be used to diagnose the phase transition, was analyzed theoretically.……

  4. Micromorph tandem solar cells: optimization of the microcrystalline silicon bottom cell in a single chamber system

    Institute of Scientific and Technical Information of China (English)

    Zhang Xiao-Dan; Zheng Xin-Xia; Xu Sheng-Zhi; Lin Quan; Wei Chang-Chun; Sun Jian; Geng Xin-Hua; Zhao Ying

    2011-01-01

    We report on the development of single chamber deposition of microcrystalline and micromorph tandem solar cells directly onto low-cost glass substrates.The cells have pin single-junction or pin/pin double-junction structures on glass substrates coated with a transparent conductive oxide layer such as SnO2 or ZnO.By controlling boron and phosphorus contaminations,a single-junction microcrystalline silicon cell with a conversion efficiency of 7.47% is achieved with an i-layer thickness of 1.2 μm.In tandem devices,by thickness optimization of the microcrystalline silicon bottom solar cell,we obtained an initial conversion efficiency of 9.91% with an aluminum (Al) back reflector without a dielectric layer.In order to enhance the performance of the tandem solar cells,an improved light trapping structure with a ZnO/Al back reflector is used.As a result,a tandem solar cell with 11.04% of initial conversion efficiency has been obtained.

  5. Growth and microstructure properties of microcrystalline silicon films deposited using jet-ICPCVD

    Institute of Scientific and Technical Information of China (English)

    Zuo Zewen; Guan Wentian; Xin Yu; Lü Jin; Wang Junzhuan; Pu Lin; Shi Yi; Zheng Youdou

    2011-01-01

    Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition (jet-ICPCVD).An investigation into the deposition rate and microstructure properties of the deposited films showed that a high deposition rate of over 20 nm/s can be achieved while maintaining reasonable material quality.The deposition rate can be controlled by regulating the generation rate and transport of film growth precursors.The film with high crystallinity deposited at low temperature could principally result from hydrogen-induced chemical annealing.

  6. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ambrosio, R., E-mail: rambrosi@uacj.mx [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Moreno, M.; Torres, A. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Carrillo, A. [Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Vivaldo, I.; Cosme, I. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Heredia, A. [Universidad Popular Autónoma del Estado de Puebla, Puebla (Mexico)

    2015-09-15

    Highlights: • Nanostructured silicon thin films were deposited by PECVD. • Polymorphous and microcrystalline were obtained varying the pressure and power. • Structural and optoelectronics properties were studied. • The σ{sub dark} changed by 5 order of magnitude under illumination, V{sub d} was at 2.5 A/s. • The evidence of embedded nanocrystals into the amorphous matrix was investigated. - Abstract: Amorphous silicon thin films with embedded nanocrystals and microcrystalline silicon were deposited by the standard Radio Frequency (RF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, from SiH{sub 4}, H{sub 2}, Ar gas mixture at substrate temperature of 200 °C. Two series of films were produced varying deposition parameters as chamber pressure and RF power density. The chemical bonding in the films was characterized by Fourier transform infrared spectroscopy, where it was observed a correlation between the hydrogen content and the morphological and electrical properties in the films. Electrical and optical parameters were extracted in both series of films, as room temperature conductivity (σ{sub RT}), activation energy (E{sub a}), and optical band gap (E{sub g}). As well, structural analysis in the films was performed by Raman spectroscopy and Atomic Force Microscopy (AFM), which gives an indication of the films crystallinity. The photoconductivity changed in a range of 2 and 6 orders of magnitude from dark to AM 1.5 illumination conditions, which is of interest for thin film solar cells applications.

  7. Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency

    Directory of Open Access Journals (Sweden)

    Mitsuoki Hishida

    2016-01-01

    Full Text Available Stopping the plasma-enhanced chemical vapor deposition (PECVD once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon (μc-Si:H used in thin-film silicon tandem solar cells. This process aimed to reduce defect regions which occur due to collision with neighboring grains as the film becomes thicker. As a result, high crystallinity (Xc of μc-Si:H was obtained. Eventually, a solar cell using this process improved the conversion efficiency by 1.3% (0.14 points, compared with a normal-condition cell. In this paper, we propose an easy method to improve the conversion efficiency with PECVD.

  8. Absorption coefficient modeling of microcrystalline silicon thin film using Maxwell-Garnett effective medium theory.

    Science.gov (United States)

    Chen, Sheng-Hui; Wang, Hsuan-Wen; Chang, Ting-Wei

    2012-03-12

    Considering the Mott-Davis density of state model and Rayleigh scattering effect, we present an approach to model the absorption profile of microcrystalline silicon thin films in this paper. Maxwell-Garnett effective medium theory was applied to analyze the absorption curves. To validate the model, several experimental profiles have been established and compared with those results from the model. With the assistance of the genetic algorithm, our results show that the absorption curves from the model are in good agreement with the experiments. Our findings also indicate that, as the crystal volume fraction increases, not only do the defects in amorphous silicon reduce, but the bulk scattering effect is gradually enhanced as well.

  9. Preparation of hydrogenated microcrystalline silicon films with hot-wire-assisted MWECR-CVD system

    Institute of Scientific and Technical Information of China (English)

    He Bin; Chen Guang-Hua; Zhu Xiu-Hong; Zhang Wen-Li; Ding Yi; Ma Zhan-Jie; Gao Zhi-Hua; Song Xue-Mei; Deng Jin-Xiang

    2006-01-01

    Intrinsic hydrogenated microcrystalline silicon (μc-Si:H) films have been prepared by hot-wire-assisted microwave electron-cyclotron-resonance chemical vapour deposition (Hw-MwECR-CVD) under different deposition conditions.Fourier-transform infrared spectra and Raman spectra were measured.Optical band gap WaS determined by Tauc plots,and experiments of photo-induced degradation were performed.It was observed that hydrogen dilution plays a more essential role than substrate temperature in microcrystalline transformation at low temperatures. Crystalline volume fraction and mean grain size in the films increase with the dilution ratio (R=H2/(H2+SiH4)).With the rise of crystallinity in the films,the optical band gap tends to become narrower while the hydrogen content and photo-induced degradation decrease dramatically.The samples,were identified as μc-Si:H films,by calculating the optical band gap.It is considered that hydrogen dilution has an effect on reducing the crystallization activation energy of the material,which promotes the heterogeneous solid-state phase transition characterized by the Johnson-Mehl-Avrami (JMA) equation.The films with the needed structure can be prepared by balancing deposition and crystaUization through controlling process parameters.

  10. High performance transparent in-plane silicon nanowire Fin-TFTs via a robust nano-droplet-scanning crystallization dynamics.

    Science.gov (United States)

    Xu, Mingkun; Wang, Jimmy; Xue, Zhaoguo; Wang, Junzhuan; Feng, Ping; Yu, Linwei; Xu, Jun; Shi, Yi; Chen, Kunji; Roca I Cabarrocas, Pere

    2017-07-27

    High mobility, scalable and even transparent thin-film transistors (TFTs) are always being pursued in the field of large area electronics. While excimer laser-beam-scanning can crystallize amorphous Si (a-Si) into high mobility poly-Si, it is limited to small areas. We here demonstrate a robust nano-droplet-scanning strategy that converts an a-Si:H thin film directly into periodic poly-Si nano-channels, with the aid of well-coordinated indium droplets. This enables the robust batch-fabrication of high performance Fin-TFTs with a high hole mobility of >100 cm(2) V(-1) s(-1) and an excellent subthreshold swing of only 163 mV dec(-1), via a low temperature high aperture displays and fully transparent electronics. The successful implementation of such a reliable nano-droplet-scanning strategy, rooted in the strength of nanoscale growth dynamics, will enable eventually the batch-manufacturing and upgrade of high performance large area electronics in general, and high definition and scalable flat-panel displays in particular.

  11. Amorphous and microcrystalline silicon applied in very thin tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schicho, Sandra

    2011-07-28

    Thin-film solar cells are fabricated by low-cost production processes, and are therefore an alternative to conventionally used wafer solar cells based on crystalline silicon. Due to the different band gaps, tandem cells that consist of amorphous (a-Si:H) and microcrystalline ({mu}c-Si:H) single junction solar cells deposited on top of each other use the solar spectrum much more efficient than single junction solar cells. The silicon layers are usually deposited on TCO (Transparent Conductive Oxide)-coated glass and metal- or plastic foils. Compared to the CdTe and CIGS based thin-film technologies, silicon thin-film solar cells have the advantage that no limitation of raw material supply is expected and no toxic elements are used. Nevertheless, the production cost per Wattpeak is the decisive factor concerning competitiveness and can be reduced by, e.g., shorter deposition times or reduced material consumption. Both cost-reducing conceptions are simultaneously achieved by reducing the a-Si:H and {mu}c-Si:H absorber layer thicknesses in a tandem device. In the work on hand, the influence of an absorber layer thickness reduction up to 77% on the photovoltaic parameters of a-Si:H/{mu}c-Si:H tandem solar cells was investigated. An industry-oriented Radio Frequency Plasma-Enhanced Chemical Vapour Deposition (RF-PECVD) system was used to deposit the solar cells on glass substrates coated with randomly structured TCO layers. The thicknesses of top and bottom cell absorber layers were varied by adjusting the deposition time. Reduced layer thicknesses lead to lower absorption and, hence, to reduced short-circuit current densities which, however, are partially balanced by higher open-circuit voltages and fill factors. Furthermore, by using very thin amorphous top cells, the light-induced degradation decreases tremendously. Accordingly, a thickness reduction of 75% led to an efficiency loss of only 21 %. By adjusting the parameters for the deposition of a-Si:H top cells, a

  12. STRUCTURAL PROPERTIES INVESTIGATION ON MICROCRYSTALLINE SILICON FILMS DEPOSITED WITH VHF-PECVD TECHNIQUE

    Institute of Scientific and Technical Information of China (English)

    H.D. Yang

    2005-01-01

    Raman scattering spectroscopy and scanning electron microscopy (SEM) techniques were used to determine the structural properties of two typical series of microcrystalline silicon(μc-Si:H) films deposited at different VHF plasma power and different working gas pressure by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique. Raman spectra measurements show that both crystalline volume fraction Xc and average grain size d of μc-Si: H films are strongly affected by the two deposition conditions and are more sensitive to working gas pressure than VHF plasma power. SEM characterizations have further confirmed that VHF plasma power and working gas pressure could clearly enhance the surface roughness of μc-Si: H films ascribing to polymerization reactions, which is also more sensitive to working gas pressure than VHF plasma power.

  13. Application of scanning Kelvin probe microscopy for the electrical characterization of microcrystalline silicon for photovoltaics

    CERN Document Server

    Breymesser, A

    2000-01-01

    constructed and built. Great effort was concentrated on the characterization of the SKPM experiment. On the basis of an extended knowledge about the performance investigations concentrated on cross sections of microcrystalline silicon diode structures produced by hot-wire chemical vapor deposition (HW-CVD). A pin structure for the diodes was chosen due to the low diffusion lengths within this rather defective material. The evolution of the built-in electric drift field within the intrinsic absorber is a prerequisite for obtaining high short circuit current densities. SKPM was able to provide information about the potential and electric field distribution within the cross-sectioned diode structures. In conjunction with simulations statements about actual defect and dopant distributions could be derived. Several diode structures with different deposition and compensation conditions of the naturally n-type intrinsic layer were investigated. In order to explore the character of the defects deep level transient sp...

  14. Influence of total gas flow rate on microcrystalline silicon films prepared by VHF-PECVD

    Institute of Scientific and Technical Information of China (English)

    Gao Yan-Tao; Zhang Xiao-Dan; Zhao Ying; Sun Jian; Zhu Feng; Wei Chang-Chun; Chen Fei

    2006-01-01

    Hydrogenated microcrystalline silicon (μc-Si:H) films are fabricated by very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) at a silane concentration of 7% and a varying total gas flow rate (H2+SiH4).Relations between the total gas flow rate and the electrical and structural properties as well as deposition rate of the films are studied. The results indicate that with the total gas flow rate increasing the photosensitivity and deposition rate increase, but the crystalline volume fraction (Xc) and dark conductivity decrease. And the intensity of (220) peak first increases then decreases with the increase of the total gas flow rate. The cause for the changes in the structure and deposition rate of the films with the total gas flow rate is investigated using optical emission spectroscopy (OES).

  15. Unoriented 3d TFTs

    CERN Document Server

    Bhardwaj, Lakshya

    2016-01-01

    This paper generalizes two facts about oriented 3d TFTs to the unoriented case. On one hand, it is known that oriented 3d TFTs having a topological boundary condition admit a state-sum construction known as the Turaev-Viro construction. This is related to the string-net construction of fermionic phases of matter. We show how Turaev-Viro construction can be generalized to unoriented 3d TFTs. On the other hand, it is known that the "fermionic" versions of oriented TFTs, known as Spin-TFTs, can be constructed in terms of "shadow" TFTs which are ordinary oriented TFTs with an anomalous Z_2 1-form symmetry. We generalize this correspondence to Pin+ TFTs by showing that they can be constructed in terms of ordinary unoriented TFTs with anomalous Z_2 1-form symmetry having a mixed anomaly with time-reversal symmetry. The corresponding Pin+ TFT does not have any anomaly for time-reversal symmetry however and hence it can be unambiguously defined on a non-orientable manifold. In case a Pin+ TFT admits a topological bou...

  16. Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers

    Directory of Open Access Journals (Sweden)

    Goyal Prabal

    2016-01-01

    Full Text Available The use of hexamethyldisiloxane (HMDSO as an oxygen source for the growth of p-type silicon-based layers deposited by Plasma Enhanced Chemical Vapor Deposition is evaluated. The use of this source led to the incorporation of almost equivalent amounts of oxygen and carbon, resulting in microcrystalline silicon oxycarbide thin films. The layers were examined with characterisation techniques including Spectroscopic Ellipsometry, Dark Conductivity, Fourier Transform Infrared Spectroscopy, Secondary Ion Mass Spectrometry and Transmission Electron Microscopy to check material composition and structure. Materials studies show that the refractive indices of the layers can be tuned over the range from 2.5 to 3.85 (measured at 600 nm and in-plane dark conductivities over the range from 10-8 S/cm to 1 S/cm, suggesting that these doped layers are suitable for solar cell applications. The p-type layers were tested in single junction amorphous silicon p-i-n type solar cells.

  17. Microcrystalline B-doped window layers prepared near amorphous to microcrystalline transition by HWCVD and its application in amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, P. [Department of Physics/Center of Optical Technologies and Laser Controlled Processes, University of Kaiserslautern, P.O. Box 3049, Kaiserslautern D-67653 (Germany)]. E-mail: kumarp@rhrk.uni-kl.de; Kupich, M. [Department of Physics/Center of Optical Technologies and Laser Controlled Processes, University of Kaiserslautern, P.O. Box 3049, Kaiserslautern D-67653 (Germany); Grunsky, D. [Department of Physics/Center of Optical Technologies and Laser Controlled Processes, University of Kaiserslautern, P.O. Box 3049, Kaiserslautern D-67653 (Germany); Schroeder, B. [Department of Physics/Center of Optical Technologies and Laser Controlled Processes, University of Kaiserslautern, P.O. Box 3049, Kaiserslautern D-67653 (Germany)

    2006-04-20

    The electronic and structural properties of p-type microcrystalline silicon films prepared near the microcrystalline to amorphous ({mu}c-amorphous) transition by hot-wire chemical vapor deposition are studied. Silane is used as a source gas while H{sub 2} as diluent and trimethylboron (TMB) and boron trifluoride (BF{sub 3}) as doping gases. Increasing TMB concentration from 0.01% to 5% favors the amorphous growth whereas for BF{sub 3} the crystalline fraction remains constant. The dark conductivity ({sigma} {sub d}) of {mu}c-Si:H p-layers remains approximately constant for TMB 1-5% at constant crystalline fraction X {sub c}. This dark conductivity behavior is attributed to the decrease in doping efficiency with increasing TMB concentration. The best initial efficiency obtained for a 400 nm amorphous pin solar cell with optimized {mu}c-Si:H p-layer is 7.7% (V {sub oc} = 874 mV, J {sub sc} = 12.91 mA/cm{sup 2}, FF = 68%)

  18. The Emitter Having Microcrystalline Surface in Silicon Heterojunction Interdigitated Back Contact Solar Cells

    Science.gov (United States)

    Ji, Kwang-sun; Syn, Hojung; Choi, Junghoon; Lee, Heon-Min; Kim, Donghwan

    2012-10-01

    In producing the Si heterojunction interdigitated backcontact solar cells, we investigated the feasibility of applying amorphous Si emitter having considerable crystalline Si phase at the facing to transparent conducting oxide (TCO) layer. Prior to evaluating electrical property, we characterized material nature of hydrogenated microcrystalline p-type silicon (µc-p-Si:H) as crystallized fraction, surface morphology, bonding kinds in thin films and then surface passivation quality finally. The diode and interface contact characteristics were induced by the simple test device and then current-voltage (I-V) curve showed more linearity in µc/hydrogenated amorphous silicon (a-Si:H) emitter case. We fabricated heterojunction back contact (HBC) solar cells using p/n interdigitated structure and acquired the 23.4% efficiency in cell size with performance parameters as open-circuit voltage (Voc) 723 mV, short-circuit current density (Jsc) 41.8 mA/cm2, fill factor (FF) 0.774, in the cell size (at 2×2 cm2).

  19. SUBSTRATE EFFECT ON HYDROGENATED MICROCRYSTALLINE SILICON FILMS DEPOSITED WITH VHF-PECVD TECHNIQUE

    Institute of Scientific and Technical Information of China (English)

    H.D. Yang

    2006-01-01

    Raman spectra and scanning electron microscope (SEM) techniques were used to determine the structural properties of microcrystalline silicon (μc-Si:H) films deposited on different substrates with the very high frequency plasma-enhanced chemical vapor deposition ( VHF-PECVD )technique. Using the Raman spectra, the values of crystalline volume fraction Xc and average grain size d are 86%, 12.3nm; 65%, 5.45nm; and 38%, 4.05nm, for single crystalline silicon wafer,corning 7059 glass, and general optical glass substrates, respectively. The SEM images further demonstrate the substrate effect on the film surface roughness. For the single crystalline silicon wafer and Corning 7059 glass, the surfaces of the μc-Si:H films are fairly smooth because of the homogenous growth or little lattice mismatch. But for general optical glass, the surface of the μc-Si:H film is very rough, thus the growing surface roughness affects the crystallization process and determines the average grain size of the deposited material. Moreover, with the measurements of thickness, photo and dark conductivity, photosensitivity and activation energy, the substrate effect on the deposition rate, optical and electrical properties of the μc-Si:H thin films have also been investigated. On the basis of the above results, it can be concluded that the substrates affect the initial growing layers acting as a seed for the formation of a crystalline-like material, and then the deposition rates, optical and electrical properties are also strongly influenced, hence,deposition parameter optimization is the key method that can be used to obtain a good initial growing layer, to realize the deposition of μc-Si:H films with device-grade quality on cheap substrates such as general glass.

  20. Factors limiting the open-circuit voltage in microcrystalline silicon solar cells

    Directory of Open Access Journals (Sweden)

    Chatterjee P.

    2011-11-01

    Full Text Available In studying photovoltaic devices made with silicon thin films and considering them according to their grain size, it is curious that as the crystalline fraction increases, the open-circuit voltage (Voc – rather than approaching that of the single-crystal case – shows a decline. To gain an insight into this behavior, observed in hydrogenated microcrystalline silicon (μc-Si:H solar cells prepared under a variety of deposition conditions, we have used a detailed electrical-optical computer modeling program, ASDMP. Two typical μc-Si:H cells with low (~79% and higher (~93% crystalline volume fractions (Fc, deposited in our laboratory and showing this general trend, were modeled. From the parameters extracted by simulation of their experimental current density – voltage and quantum efficiency characteristics, it was inferred that the higher Fc cell has both a higher band gap defect density as well as a lower band gap energy. Our calculations reveal that the proximity of the quasi-Fermi levels to the energy bands in cells based on highly crystallized μc-Si:H (assumed to have a lower band gap, results in both higher free and trapped carrier densities. The trapped hole population, that is particularly high near the P/I interface, results in a strong interface field, a collapse of the field in the volume, and hence a lower open-circuit voltage. Interestingly enough, we were able to fabricate fluorinated μc-Si:H:F cells having 100% crystalline fraction as well as very large grains, that violate the general trend and show a higher Voc. Modeling indicates that this is possible for the latter case, as also for a crystalline silicon PN cell, in spite of a sharply reduced band gap, because the lower effective density of states at the band edges and a sharply reduced gap defect density overcome the effect of the lower band gap.

  1. Effects of seed layer on the performance of microcrystalline silicon germanium solar cells

    Institute of Scientific and Technical Information of China (English)

    Cao Yu; Zhang Jianjun; Li Tianwei; Huang Zhenhua; Ma Jun; Yang Xu; Ni Jian

    2013-01-01

    Using plasma enhanced chemical vapor deposition (PECVD) at 13.56 MHz,a seed layer is fabricated at the initial growth stage of the hydrogenated microcrystalline silicon germanium (μc-Si1-xGex:H) i-layer.The effects of seeding processes on the growth of μc-Si 1-x Gex:H i-layers and the performance of μc-Si1-x Gex:H p-in single junction solar cells are investigated.By applying this seeding method,the μc-Si 1-xGex:H solar cell shows a significant improvement in short circuit current density (Jsc) and fill factor (FF) with an acceptable performance of blue response as a μc-Si:H solar cell even when the Ge content x increases up to 0.3.Finally,an improved efficiency of 7.05% is achieved for the μc-Sio.7Ge0.3:H solar cell.

  2. Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films

    Institute of Scientific and Technical Information of China (English)

    Lei Qing-Song; Wu Zhi-Meng; Geng Xin-Hua; Zhao Ying; Sun Jian; Xi Jian-Ping

    2006-01-01

    Highly conductive boron-doped hydrogenated microcrystalline silicon (μc-Si:H) films are prepared by very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at the substrate temperatures (Ts) ranging from 90℃ to 270℃. The effects of Ts on the growth and properties of the films are investigated. Results indicate that the growth rate, the electrical (dark conductivity, carrier concentration and Hall mobility) and structural (crystallinity and grain size) properties are all strongly dependent on Ts. As Ts increases, it is observed that 1) the growth rate initially increases and then arrives at a maximum value of 13.3 nm/min at Ts=210℃, 2) the crystalline volume fraction (Xc) and the grain size increase initially, then reach their maximum values at Ts = 140℃, and finally decrease, 3) the dark conductivity (σd),carrier concentration and Hall mobility have a similar dependence on Tg and arrive at their maximum values at Ts=190℃. In addition, it is also observed that at a lower substrate temperature Ts, a higher dopant concentration is required in order to obtain a maximum σd.

  3. Modeling of triangular-shaped substrates for light trapping in microcrystalline silicon solar cells

    Science.gov (United States)

    Zi, Wei; Hu, Jian; Ren, Xiaodong; Ren, Xianpei; Wei, QingBo; Liu, Shengzhong (Frank)

    2017-01-01

    The influence of triangular grating used as a light trapping structure on the optical wave propagation within thin-film microcrystalline silicon (μc-Si:H) solar cells is investigated. A finite difference time domain (FDTD) approach is used to rigorously solve the Maxwell's equations in three dimensions. We apply two parameters of mean surface roughness (Sa) and slope (k) to define triangular structure and study their influence on the absorption of μc-Si:H. When Sa and k are set to 400 nm and 1, respectively, a largest enhancement of absorption is achieved. The optimum short circuit photocurrent (Jsc) of a 1-μm thick μc-Si:H solar cell made on such a textured substrate can reach 27.0 mA/cm2. The carrier generation rate in the μc-Si:H material is also rigorously analyzed. Finally, we identify some key optical losses in μc-Si:H solar cells and propose for further optimizing the device design.

  4. Impact of microcrystalline silicon carbide growth using hot-wire chemical vapor deposition on crystalline silicon surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Pomaska, M., E-mail: m.pomaksa@fz-juelich.de [Forschungszentrum Jülich, IEK5-Photovoltaics, Wilhelm-Johnen-Strasse, 52425 Jülich (Germany); Beyer, W. [Helmholtz-Zentrum Berlin für Materialien und Energie, Silicon Photovoltaics, Kekuléstrasse 5, 12489 Berlin (Germany); Neumann, E. [Forschungszentrum Jülich, PGI-8-PT, Wilhelm-Johnen-Strasse, 52425 Jülich (Germany); Finger, F.; Ding, K. [Forschungszentrum Jülich, IEK5-Photovoltaics, Wilhelm-Johnen-Strasse, 52425 Jülich (Germany)

    2015-11-30

    Highly crystalline microcrystalline silicon carbide (μc-SiC:H) with excellent optoelectronic material properties is a promising candidate as highly transparent doped layer in silicon heterojunction (SHJ) solar cells. These high quality materials are usually produced using hot wire chemical vapor deposition under aggressive growth conditions giving rise to the removal of the underlying passivation layer and thus the deterioration of the crystalline silicon (c-Si) surface passivation. In this work, we introduced the n-type μc-SiC:H/n-type μc-SiO{sub x}:H/intrinsic a-SiO{sub x}:H stack as a front layer configuration for p-type SHJ solar cells with the μc-SiO{sub x}:H layer acting as an etch-resistant layer against the reactive deposition conditions during the μc-SiC:H growth. We observed that the unfavorable expansion of micro-voids at the c-Si interface due to the in-diffusion of hydrogen atoms through the layer stack might be responsible for the deterioration of surface passivation. Excellent lifetime values were achieved under deposition conditions which are needed to grow high quality μc-SiC:H layers for SHJ solar cells. - Highlights: • High surface passivation quality was preserved after μc-SiC:H deposition. • μc-SiC:H/μc-SiO{sub x}:H/a-SiO{sub x}:H stack a promising front layer configuration • Void expansion at a-SiO{sub x}:H/c-Si interface for deteriorated surface passivation • μc-SiC:H provides a high transparency and electrical conductivity.

  5. Amorphous and microcrystalline silicon applied in very thin tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schicho, Sandra

    2011-07-28

    Thin-film solar cells are fabricated by low-cost production processes, and are therefore an alternative to conventionally used wafer solar cells based on crystalline silicon. Due to the different band gaps, tandem cells that consist of amorphous (a-Si:H) and microcrystalline ({mu}c-Si:H) single junction solar cells deposited on top of each other use the solar spectrum much more efficient than single junction solar cells. The silicon layers are usually deposited on TCO (Transparent Conductive Oxide)-coated glass and metal- or plastic foils. Compared to the CdTe and CIGS based thin-film technologies, silicon thin-film solar cells have the advantage that no limitation of raw material supply is expected and no toxic elements are used. Nevertheless, the production cost per Wattpeak is the decisive factor concerning competitiveness and can be reduced by, e.g., shorter deposition times or reduced material consumption. Both cost-reducing conceptions are simultaneously achieved by reducing the a-Si:H and {mu}c-Si:H absorber layer thicknesses in a tandem device. In the work on hand, the influence of an absorber layer thickness reduction up to 77% on the photovoltaic parameters of a-Si:H/{mu}c-Si:H tandem solar cells was investigated. An industry-oriented Radio Frequency Plasma-Enhanced Chemical Vapour Deposition (RF-PECVD) system was used to deposit the solar cells on glass substrates coated with randomly structured TCO layers. The thicknesses of top and bottom cell absorber layers were varied by adjusting the deposition time. Reduced layer thicknesses lead to lower absorption and, hence, to reduced short-circuit current densities which, however, are partially balanced by higher open-circuit voltages and fill factors. Furthermore, by using very thin amorphous top cells, the light-induced degradation decreases tremendously. Accordingly, a thickness reduction of 75% led to an efficiency loss of only 21 %. By adjusting the parameters for the deposition of a-Si:H top cells, a

  6. Microcrystalline silicon from very high frequency plasma deposition and hot-wire CVD for ``micromorph`` tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Brummack, H.; Brueggemann, R.; Wanka, H.N.; Hierzenberger, A.; Schubert, M.B. [Univ. Stuttgart (Germany). Inst. fuer Physikalische Elektronik

    1997-12-31

    The authors have grown microcrystalline silicon from a glow discharge at very high frequencies of 55 MHz and 170 MHz with high hydrogen dilution, and also, at more than 10 times higher growth rates, similar films by hot-wire chemical vapor deposition. Both kinds of materials have extensively been characterized and compared in terms of structural, optical and electronic properties, which greatly improve by deposition in a multi- instead of a single-chamber system. Incorporation of these different materials into pin solar cells results in open circuit voltages of about 400 mV as long as the doped layers are microcrystalline and rise to more than 870 mV if amorphous p- and n-layers are used. Quantum efficiencies and fill factors are still poor but leave room for further improvement, as clearly demonstrated by a remarkable reverse bias quantum efficiency gain.

  7. Electrochemical properties and applications of nanocrystalline, microcrystalline, and epitaxial cubic silicon carbide films.

    Science.gov (United States)

    Zhuang, Hao; Yang, Nianjun; Zhang, Lei; Fuchs, Regina; Jiang, Xin

    2015-05-27

    Microstructures of the materials (e.g., crystallinitiy, defects, and composition, etc.) determine their properties, which eventually lead to their diverse applications. In this contribution, the properties, especially the electrochemical properties, of cubic silicon carbide (3C-SiC) films have been engineered by controlling their microstructures. By manipulating the deposition conditions, nanocrystalline, microcrystalline and epitaxial (001) 3C-SiC films are obtained with varied properties. The epitaxial 3C-SiC film presents the lowest double-layer capacitance and the highest reversibility of redox probes, because of its perfect (001) orientation and high phase purity. The highest double-layer capacitance and the lowest reversibility of redox probes have been realized on the nanocrystalline 3C-SiC film. Those are ascribed to its high amount of grain boundaries, amorphous phases and large diversity in its crystal size. Based on their diverse properties, the electrochemical performances of 3C-SiC films are evaluated in two kinds of potential applications, namely an electrochemical capacitor using a nanocrystalline film and an electrochemical dopamine sensor using the epitaxial 3C-SiC film. The nanocrystalline 3C-SiC film shows not only a high double layer capacitance (43-70 μF/cm(2)) but also a long-term stability of its capacitance. The epitaxial 3C-SiC film shows a low detection limit toward dopamine, which is one to 2 orders of magnitude lower than its normal concentration in tissue. Therefore, 3C-SiC film is a novel but designable material for different emerging electrochemical applications such as energy storage, biomedical/chemical sensors, environmental pollutant detectors, and so on.

  8. Disilane as a growth rate catalyst of plasma deposited microcrystalline silicon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dimitrakellis, P.; Amanatides, E., E-mail: lef@plasmatech.gr; Mataras, D. [Department of Chemical Engineering, Plasma Technology Laboratory, University of Patras, P.O. Box 140, 26504 Patras (Greece); Kalampounias, A. G. [University of Ioannina, Dep. of Chemistry, 45110, Ioannina (Greece); Spiliopoulos, N. [Department of Physics, University of Patras, P.O. Box 140, 26504 Patras (Greece); Lahootun, V.; Coeuret, F.; Madec, A. [Air Liquide CRCD,1 chemin de la porte des Loges, Les Loges en Josas, 78354 Jouy en Josas (France)

    2016-07-15

    The effect of small disilane addition on the gas phase properties of silane-hydrogen plasmas and the microcrystalline silicon thin films growth is presented. The investigation was conducted in the high pressure regime and for constant power dissipation in the discharge with the support of plasma diagnostics, thin film studies and calculations of discharge microscopic parameters and gas dissociation rates. The experimental data and the calculations show a strong effect of disilane on the electrical properties of the discharge in the pressure window from 2 to 3 Torr that is followed by significant raise of the electron number density and the drop of the sheaths electric field intensity. Deposition rate measurements show an important four to six times increase even for disilane mole fractions as low as 0.3 %. The deposition rate enhancement was followed by a drop of the material crystalline volume fraction but films with crystallinity above 40 % were deposited with different combinations of total gas pressure, disilane and silane molar ratios. The enhancement was partly explained by the increase of the electron impact dissociation rate of silane which rises by 40% even for 0.1% disilane mole fraction. The calculations of the gas usage, the dissociation and the deposition efficiencies show that the beneficial effect on the growth rate is not just the result of the increase of Si-containing molecules density but significant changes on the species participating to the deposition and the mechanism of the film growth are caused by the disilane addition. The enhanced participation of the highly sticking to the surface radical such as disilylene, which is the main product of disilane dissociation, was considered as the most probable reason for the significant raise of the deposition efficiency. The catalytic effect of such type of radical on the surface reactivity of species with lower sticking probability is further discussed, while it is also used to explain the restricted

  9. Microcrystalline silicon oxides for silicon-based solar cells: impact of the O/Si ratio on the electronic structure

    Science.gov (United States)

    Bär, M.; Starr, D. E.; Lambertz, A.; Holländer, B.; Alsmeier, J.-H.; Weinhardt, L.; Blum, M.; Gorgoi, M.; Yang, W.; Wilks, R. G.; Heske, C.

    2014-10-01

    Hydrogenated microcrystalline silicon oxide (μc-SiOx:H) layers are one alternative approach to ensure sufficient interlayer charge transport while maintaining high transparency and good passivation in Si-based solar cells. We have used a combination of complementary x-ray and electron spectroscopies to study the chemical and electronic structure of the (μc-SiOx:H) material system. With these techniques, we monitor the transition from a purely Si-based crystalline bonding network to a silicon oxide dominated environment, coinciding with a significant decrease of the material's conductivity. Most Si-based solar cell structures contain emitter/contact/passivation layers. Ideally, these layers fulfill their desired task (i.e., induce a sufficiently high internal electric field, ensure a good electric contact, and passivate the interfaces of the absorber) without absorbing light. Usually this leads to a trade-off in which a higher transparency can only be realized at the expense of the layer's ability to properly fulfill its task. One alternative approach is to use hydrogenated microcrystalline silicon oxide (μc-SiOx:H), a mixture of microcrystalline silicon and amorphous silicon (sub)oxide. The crystalline Si regions allow charge transport, while the oxide matrix maintains a high transparency. To date, it is still unclear how in detail the oxygen content influences the electronic structure of the μc-SiOx:H mixed phase material. To address this question, we have studied the chemical and electronic structure of the μc-SiOx:H (0 0.5, we observe a pronounced decrease of Si 3s - Si 3p hybridization in favor of Si 3p - O 2p hybridization in the upper valence band. This coincides with a significant increase of the material's resistivity, possibly indicating the breakdown of the conducting crystalline Si network. Silicon oxide layers with a thickness of several hundred nanometres were deposited in a PECVD (plasma-enhanced chemical vapor deposition) multi chamber system

  10. Correlation Between the Raman Crystallinity of p-Type Micro-Crystalline Silicon Layer and Open Circuit Voltage of n-i-p Solar Cells.

    Science.gov (United States)

    Jung, Junhee; Kim, Sunbo; Park, Jinjoo; Shin, Chonghoon; Pham, Duy Phong; Kim, Jiwoong; Chung, Sungyoun; Lee, Youngseok; Yi, Junsin

    2015-10-01

    This article mainly discusses the difference between p-i-n and n-i-p type solar cells. Their structural difference has an effect on cell performance, such as open circuit voltage and fill factor. Although the deposition conditions are the same for both p-i-n and n-i-p cases, the substrate layers for depositing p-type microcrystalline silicon layers differ. In n-i-p cells, the substrate layer is p-type amorphous silicon oxide layer; whereas, in p-i-n cells, the substrate layer is ZnO:Al. The interfacial change leads to a 12% difference in the crystallinity of the p-type microcrystalline silicon layers. When the p-type microcrystalline silicon layer's crystallinity was not sufficient to activate an internal electric field, the open circuit voltage and fill factor decreased 0.075 V and 7.36%, respectively. We analyzed this problem by comparing the Raman spectra, electrical conductivity, activation energy and solar cell performance. By adjusting the thickness of the p-type microcrystalline silicon layer, we increased the open circuit voltage of the n-i-p cell from 0.835 to 0.91 V.

  11. High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by high- pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality μc-Si:H films have been achieved with a high deposition rate of 7.8 /s at a high pressure. The Voc of 560 mV and the FF of 0.70 have been achieved for a single-junction μc-Si:H p-i-n solar cell at a deposition rate of 7.8 /s.

  12. The study of the substrate temperature depended growth properties of microcrystalline silicon films deposited by VHF-PECVD method

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yongsheng, E-mail: chysh2003@zzu.edu.cn [Key Lab of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052 (China); Chen, Xiping; Hao, Xiuli; Lu, Jingxiao; Yang, Shi-e [Key Lab of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2013-04-01

    In this paper, we have measured the temperature depended growth properties of hydrogenated microcrystalline silicon (μc-Si:H) films, prepared by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) from SiH{sub 4} and H{sub 2} gas mixtures. And, a 1D plasma model coupled with a well-mixed reactor model is used to simulate the growth process, in which concentrations of gas phase species, the crystalline orientation, the hydrogen content and the deposition rate are calculated. It suggests that the increasing surface fraction of the dangling bonds with the increase of substrate temperatures is responsible for the increase in the grain sizes. At the same time, the observed variations of the X-ray-diffraction intensities and the deposition rates of the films with temperature result from the differences in the growth rates of the facets.

  13. Role of oxygen and nitrogen in n-type microcrystalline silicon carbide grown by hot wire chemical vapor deposition

    Science.gov (United States)

    Pomaska, Manuel; Mock, Jan; Köhler, Florian; Zastrow, Uwe; Perani, Martina; Astakhov, Oleksandr; Cavalcoli, Daniela; Carius, Reinhard; Finger, Friedhelm; Ding, Kaining

    2016-12-01

    N-type microcrystalline silicon carbide (μc-SiC:H(n)) deposited by hot wire chemical vapor deposition provides advantageous opto-electronic properties for window layer material in silicon-based thin-film solar cells and silicon heterojunction solar cells. So far, it is known that the dark conductivity (σd) increases with the increase in the crystallinity of μc-SiC:H(n)films. However, due to the fact that no active doping source is used, the mechanism of electrical transport in these films is still under debate. It is suggested that unintentional doping by atmospheric oxygen (O) or nitrogen (N) contamination plays an important role in the electrical transport. To investigate the impact of O and N, we incorporated O and N in μc-SiC:H(n) films and compared the influence on the microstructural, electronic, and optical properties. We discovered that, in addition to increasing the crystallinity, it is also possible to increase the σd by several orders of magnitude by increasing the O-concentration or the N-concentration in the films. Combining a high concentration of O and N, along with a high crystallinity in the film, we optimized the σd to a maximum of 5 S/cm.

  14. Development of Tandem Amorphous/Microcrystalline Silicon Thin-Film Large-Area See-Through Color Solar Panels with Reflective Layer and 4-Step Laser Scribing for Building-Integrated Photovoltaic Applications

    National Research Council Canada - National Science Library

    Tsai, Chin-Yi; Tsai, Chin-Yao

    2014-01-01

      In this work, tandem amorphous/microcrystalline silicon thin-film large-area see-through color solar modules were successfully designed and developed for building-integrated photovoltaic applications...

  15. Arrays of ZnO nanocolumns for 3-dimensional very thin amorphous and microcrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Neykova, Neda, E-mail: neykova@fzu.cz [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 16253 Prague 6 (Czech Republic); Czech Technical University in Prague, Faculty of Nuclear Sciences and Physical Engineering Trojanova 13, 120 00 Prague 2 (Czech Republic); Hruska, Karel; Holovsky, Jakub; Remes, Zdenek; Vanecek, Milan [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 16253 Prague 6 (Czech Republic)

    2013-09-30

    We report on the hydrothermal growth of high quality arrays of single crystalline zinc oxide (ZnO) nanocolumns, oriented perpendicularly to the transparent conductive oxide substrate. In order to obtain precisely defined spacing and arrangement of ZnO nanocolumns over an area up to 0.5 cm{sup 2}, we used electron beam lithography. Vertically aligned ZnO (multicrystalline or single crystals) nanocolumns were grown in an aqueous solution of zinc nitrate hexahydrate and hexamethylenetetramine at 95 °C, with a growth rate 0.5 ÷ 1 μm/h. The morphology of the nanostructures was visualized by scanning electron microscopy. Such nanostructured ZnO films were used as a substrate for the recently developed 3-dimensional thin film silicon (amorphous, microcrystalline) solar cell, with a high efficiency potential. The photoelectrical and optical properties of the ZnO nanocolumns and the silicon absorber layers of these type nanostructured solar cells were investigated in details. - Highlights: • Vertically-oriented ZnO nanocolumns were grown by hydrothermal method. • The ZnO nanocolumns were grown over an area of 0.5 cm{sup 2}. • For precise arrangement of the ZnO nanocolumns electron beam lithography was used. • We report on 3-D design of nanostructured solar cell. • Optical thickness of nanostructured cell was three times higher compared to flat cell.

  16. Tailored Voltage Waveform Deposition of Microcrystalline Silicon Thin Films from Hydrogen-Diluted Silane and Silicon Tetrafluoride: Optoelectronic Properties of Films

    Science.gov (United States)

    Johnson, Erik V.; Pouliquen, Sylvain; Delattre, Pierre-Alexandre; Booth, Jean-Paul

    2012-08-01

    The use of tailored voltage waveforms (TVW's) to excite a plasma for the deposition of thin films of hydrogenated microcrystalline silicon (µc-Si:H) has been shown to be an effective technique to decouple mean ion bombardment energy (IBE) from injected power. In this work, we examine the changes in material properties controlled by this technique through Raman scattering and spectroscopic ellipsometry for films deposited from H2-diluted SiH4, and we examine the electrical properties of such films using temperature dependent conductivity. As the laboratory-scale deposition system used had neither a load lock nor an oxygen filter in the H2 line, accidental O-doping was observed for the µc-Si:H films. We investigated suppression of this doping by adding varying amounts of SiF4, and using an SiF4/Ar pre-etch step to clean the reactor. This technique is shown to be effective in decreasing the accidental doping of the films, and intrinsic µc-Si:H films are produced with an activation energy of up to 0.55 eV. As well, an important difference in the amorphous-to-microcrystalline transition is observed once SiF4 is included in the gas mixture.

  17. Investigation of carrier density and mobility in microcrystalline silicon alloys using Hall effect and thermopower measurements; Untersuchung der Ladungstraegerkonzentration und -beweglichkeit in mikrokristallinen Siliziumlegierungen mit Hall-Effekt und Thermokraft

    Energy Technology Data Exchange (ETDEWEB)

    Sellmer, Christian

    2012-08-31

    The electronic properties of amorphous and microcrystalline silicon layers in thin-film solar cells significantly affect the efficiency of solar cells. An important property of the individual layer is the electronic transport, which is described by the variables conductivity, photoconductivity, mobility, and carrier concentration. In the past, individual characterization methods were typically used to determine the electronic properties. Using the combination of Hall effect, conductivity, and thermoelectric power measurements additional variables can be derived, such as the effective density of states at the valence and conduction band edge, making a more detailed description of the material possible. To systematically study the electronic properties - in particular carrier mobility and carrier concentration - various series of silicon films are prepared for this work including microcrystalline silicon layers of different doping and crystallinity and a series of silicon films where the Fermi level is moved by irradiation with high energy electrons on one and the same sample. The results show that the transition from amorphous to microcrystalline transport is relatively abrupt. If the electron transport takes place in only amorphous regions, it is marked by the sign anomaly of the Hall effect. If a continuous crystalline path exists, the electronic properties are dominated by the crystalline volume fraction. The results of the measurements of silicon layers are compared with those of microcrystalline silicon carbide samples. Silicon carbide is especially interesting for future applications in thin-film solar cells due to high transparency and high conductivity. It is shown that the effective density of states at the valence and conduction band edge as a function of temperature in p- and n-type microcrystalline silicon and silicon carbide samples largely coincide with those of crystalline silicon or silicon carbide. A square root shaped profile of the density of

  18. n +-Microcrystalline-Silicon Tunnel Layer in Tandem Si-Based Thin Film Solar Cells

    Science.gov (United States)

    Lee, Ching-Ting; Lee, Hsin-Ying; Chen, Kuan-Hao

    2016-10-01

    In this study, the p-SiC/ i-Si/ n-Si cell and the p-SiC/ i-SiGe/ n-Si cell deposited using plasma-enhanced chemical vapor deposition were cascaded for forming the tandem Si-based thin film solar cells to absorb the wide solar spectrum. To further improve the performances of the tandem Si-based thin film solar cells, a 5-nm-thick n +-microcrystalline-Si ( n +-μc-Si) tunnel layer deposited using the laser-assisted plasma-enhanced chemical vapor deposition was inserted between the p-SiC/ i-Si/ n-Si cell and the p-SiC/ i-SiGe/ n-Si cell. Since both the plasma and the CO2 laser were simultaneously utilized to efficiently decompose the reactant and doping gases, the carrier concentration and the carrier mobility of the n +-μc-Si tunnel layer were significantly improved. The ohmic contact formed between the p-SiC layer and the n +-μc-Si tunnel layer with low resistance was beneficial to the generated current transportation and the carrier recombination rate. Therefore, the conversion efficiency of the tandem solar cells was promoted from 8.57% and 8.82% to 9.91% compared to that without tunnel layer and with 5-nm-thick n +-amorphous-Si tunnel layer.

  19. Performance of amorphous and microcrystalline silicon pin solar cells under variable light intensity

    Energy Technology Data Exchange (ETDEWEB)

    Nath, M.; Chakraborty, S.; Chatterjee, P. [Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032 (India); Kim, K.H.; Johnson, E.V.; Roca i Cabarrocas, P. [Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique, CNRS, 91128 Palaiseau (France)

    2010-04-15

    We have studied the solar cell behaviour under variable light intensity (VLI) of a standard a-Si:H pin solar cell with a wide band gap a-SiC:H emitter layer, and microcrystalline ({mu}c)-Si:H solar cells of different degrees of crystallinity, using experiments in conjunction with detailed electrical-optical modelling. Both experiments and modelling reveal that whereas the fill factor (FF) of the a-Si:H pin cell decreases with increasing light intensity, starting from a low applied light bias, that of the {mu}c-Si:H cells increases with light intensity over a major part of this range. This fact enables one to attain the maximum of the open-circuit voltage - fill factor product (V{sub oc} x FF) at 1 to 2 suns intensity for the latter case; however this is not achieved for the a-Si:H cell. Using modelling we try to understand this difference in behaviour of the FF under VLI for the two types of cells. We also predict under what conditions it would be possible to shift the (V{sub oc} x FF){sub max} for the a-Si:H cell towards one sun intensity. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Hot-wire chemical vapor deposition prepared aluminum doped p-type microcrystalline silicon carbide window layers for thin film silicon solar cells

    Science.gov (United States)

    Chen, Tao; Köhler, Florian; Heidt, Anna; Carius, Reinhard; Finger, Friedhelm

    2014-01-01

    Al-doped p-type microcrystalline silicon carbide (µc-SiC:H) thin films were deposited by hot-wire chemical vapor deposition at substrate temperatures below 400 °C. Monomethylsilane (MMS) highly diluted in hydrogen was used as the SiC source in favor of SiC deposition in a stoichiometric form. Aluminum (Al) introduced from trimethylaluminum (TMAl) was used as the p-type dopant. The material property of Al-doped p-type µc-SiC:H thin films deposited with different deposition pressure and filament temperature was investigated in this work. Such µc-SiC:H material is of mainly cubic (3C) SiC polytype. For certain conditions, like high deposition pressure and high filament temperature, additional hexagonal phase and/or stacking faults can be observed. P-type µc-SiC:H thin films with optical band gap E04 ranging from 2.0 to 2.8 eV and dark conductivity ranging from 10-5 to 0.1 S/cm can be prepared. Such transparent and conductive p-type µc-SiC:H thin films were applied in thin film silicon solar cells as the window layer, resulting in an improved quantum efficiency at wavelengths below 480 nm.

  1. Preparation and Characterisation of Amorphous-silicon Photovoltaic Devices Having Microcrystalline Emitters; Preparacion y Caracterizacion de Dispositivos Fotovoltaicos de Silicio Amorfo con Emisiones Microcristalinos

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, M. T.; Gandia, J. J.; Carabe, J. [CIEMAT. Madrid (Spain)

    1999-11-01

    The present work summarises the essential aspects of the research carried out so far at CIEMAT on amorphous-silicon solar cells. The experience accumulated on the preparation and characterisation of amorphous and microcrystalline silicon has allowed to start from intrinsic (absorbent) and p-and n-type (emitters) materials not only having excellent optoelectronic properties, but enjoying certain technological advantages with respect to those developed by other groups. Among these are absorbent-layer growth rates between 5 and 10 times as fast as conventional ones and microcrystalline emitters prepared without using hydrogen. The preparation of amorphous-silicon cells has required the solution of a number of problems, such as those related to pinholes, edge leak currents and diffusion of metals into the semiconductor. Once such constraints have been overcome, it has been demonstrated not only that the amorphous-silicon technology developed at CIEMAT is valid for making solar cells, but also that the quality of the semiconductor material is good for the application according to the partial results obtained. The development of thin-film laser-scribing technology is considered essential. Additionally it has been concluded that cross contamination, originated by the fact of using a single-chamber reactor, is the basic factor limiting the quality of the cells developed at CIEMAT. The present research activity is highly focused on the solution of this problem. (Author)

  2. Simulation of gas phase reactions for microcrystalline silicon films fabricated by PECVD

    Institute of Scientific and Technical Information of China (English)

    HE Bao-hua; YANG Shi-e; CHEN Yong-sheng; LU Jing-xiao

    2011-01-01

    We present a numerical gas phase reaction model for hydrogenated microcrystaUine silicon (μc-Si:H) films fi'om SiH and H gas mixtures with plasma enhanced chemical vapor deposition (PECVD). Under the typical μc-Si:H deposition conditions, the concentrations of the species in the plasma are calculated and the effects of silane fraction (SF=[SiH]/[H+SiH]) are investigated. The results show that SiH is the key precursor for μc-Si:H films growth, and other neutral radicals, such as SiH, SiH and SiH, may play some roles in the film deposition. With the silane fraction increasing, the precursor concentration increases, but H atom concentration decreases rapidly, which results in the lower H/SiH ratio.

  3. Numerical analysis of poly-TFTs under off conditions

    Science.gov (United States)

    Colalongo, L.; Valdinoci, M.; Baccarani, G.; Migliorato, P.; Tallarida, G.; Reita, C.

    1997-04-01

    Polycrystalline silicon thin-film transistors (poly-TFTs) are getting increasingly important for applications in active-matrix flat-panel displays (AMFPDs) and, more generally, for large-area electronics. As the leakage current requirements of poly-TFTs for large area applications become more stringent, it is important to improve our understanding of the physical effects which originate it. The purpose of this work is that of investigating the anomalous behaviour of leakage-currents in poly-TFTs by numerical simulation, taking into account the effect of energy-distributed traps and field-enhanced generation mechanisms. In what follows, we show that the off current is due to the concomitant effects of Poole-Frenkel, trap-assisted and band-to-band tunneling generation mechanisms, and that each of them may be important at different temperature and bias conditions.

  4. Photo-induced density-of-states variation measured by DLTS method in intrinsic micro-crystalline silicon (i-μc-Si:H) films

    Science.gov (United States)

    Wang, J.; Sun, Q. S.; Liu, H. N.; He, Y. L.

    1987-06-01

    This paper advances a measurement and two calculations of a high-frequency DLTS method for the density-of-states g(E) of intrinsic micro-crystalline and amorphous silicon film. The method surmounts the difficulties of DLTS measurement of i-a-Si:H or i-μc-Si:H samples and applies the common high-frequency DLTS to it, while the temperature of measurement is extended below 77K. Following the method, we successfully observed the obvious increase of density-of-states produced by illumination.

  5. Introduction to thin film transistors physics and technology of TFTs

    CERN Document Server

    Brotherton, S D

    2013-01-01

    Introduction to Thin Film Transistors reviews the operation, application, and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these mat...

  6. Radial n-i-p structure SiNW-based microcrystalline silicon thin-film solar cells on flexible stainless steel.

    Science.gov (United States)

    Xie, Xiaobing; Zeng, Xiangbo; Yang, Ping; Li, Hao; Li, Jingyan; Zhang, Xiaodong; Wang, Qiming

    2012-11-12

    Radial n-i-p structure silicon nanowire (SiNW)-based microcrystalline silicon thin-film solar cells on stainless steel foil was fabricated by plasma-enhanced chemical vapor deposition. The SiNW solar cell displays very low optical reflectance (approximately 15% on average) over a broad range of wavelengths (400 to 1,100 nm). The initial SiNW-based microcrystalline (μc-Si:H) thin-film solar cell has an open-circuit voltage of 0.37 V, short-circuit current density of 13.36 mA/cm2, fill factor of 0.3, and conversion efficiency of 1.48%. After acid treatment, the performance of the modified SiNW-based μc-Si:H thin-film solar cell has been improved remarkably with an open-circuit voltage of 0.48 V, short-circuit current density of 13.42 mA/cm2, fill factor of 0.35, and conversion efficiency of 2.25%. The external quantum efficiency measurements show that the external quantum efficiency response of SiNW solar cells is improved greatly in the wavelength range of 630 to 900 nm compared to the corresponding planar film solar cells.

  7. A study of growth mechanism of microcrystalline thin silicon films deposited at low temperature by SiF4{text{-}H2{text{-}}He} PECVD

    Science.gov (United States)

    Losurdo, M.; Giangregorio, M.; Grimaldi, A.; Capezzuto, P.; Bruno, G.

    2004-06-01

    Fully microcrystalline silicon, μc-Si, thin films (polyimide substrates by plasma enhanced chemical vapor deposition (PECVD) using SiF{4}-H{2}-He. The effect of deposition temperature on the structure, i.e., crystallinity and density, of μc-Si films is investigated by spectroscopic ellipsometry in the 1.5 {-}5.5 eV energy range. Modeling of spectroscopic ellipsometry data is used for highlighting crystallinity of the substrate/film interface, i.e., the absence of any amorphous incubation layer. It is found that film crystallinity does not depend on film thickness, and it increases with the decrease of deposition temperature. The temperature dependence is explained on the basis of a like-Arrhenius kinetic analysis of the etching process by atomic fluorine and hydrogen of both μc-Si and a-Si phases.

  8. Optimization of n/i and i/p buffer layers in n-i-p hydrogenated microcrystalline silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    Yuan Yujie; Hou Guofu; Zhang Jianjun; Xue Junming; Cao Liran; Zhao Ying; Geng Xinhua

    2009-01-01

    Hydrogenated microcrystalline silicon (μc-Si:H) intrinsic films and solar cells with n-i-p configuration were prepared by plasma enhanced chemical vapor deposition (PECVD). The influence of n/i and i/p buffer layerson the μc-Si:H cell performance was studied in detail. The experimental results demonstrated that the efficiency is much improved when there is a higher crystallinity at n/i interface and an optimized a-Si:H buffer layer at i/p interface. By combining the above methods, the performance ofμc-Si:H single-junction and a-Si:H/μc-Si:H tandemsolar ceils has been significantly improved.

  9. An integrated driving circuit implemented with p-type LTPS TFTs for AMOLED

    Institute of Scientific and Technical Information of China (English)

    ZHAO Li-qing; WU Chun-ya; HAO Da-shou; YAO Ying; MENG Zhi-guo; XIONG Shao-zhen

    2009-01-01

    Based on the technology of low temperature poly silicon thin film transistors (poly-Si-TFTs), a novel p-type TFT AMOLED panel with self-scanned driving circuit is introduced in this paper. A shift register formed with novel p-type TFTs is pro-posed to realize the gate driver. A flip-latch cooperated with the shift register is designed to conduct the data writing. In order to verify the validity of the proposed design, the circuits are simulated with SILVACO TCAD tools, using the MODEL in which the parameters of LTPS TFTs were extracted from the LTPS TFTs made in our lab. The simulation results indicate that the circuit can fulfill the driving function.

  10. Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

    Directory of Open Access Journals (Sweden)

    Taweewat Krajangsang

    2014-01-01

    Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

  11. STUDY ON MICROCRYSTALLINE SILICON THIN FILM SOLAR CELLS ON FLEXIBLE SUBSTRATE%柔性衬底微晶硅薄膜太阳电池研究

    Institute of Scientific and Technical Information of China (English)

    周丽华; 刘成; 叶晓军; 钱子勍; 陈鸣波

    2011-01-01

    The intrinsic microcrystalline silicon thin film layers (I-layer) and nip single microcrystalline silicon solar cells were prepared by plasma enhanced chemical vapor deposition (PECVD). Then the relationship among deposition parameters, the characteristics of I-layers and the performanceof solar cells was studied. It demonstrated that crystalline fraction of I-layers decreased gradually with the increasing of silicon concentration. And the performance of solar cells deteriorated while the deposition temperature rose over 200℃. With the increasing of discharge power, the crystalline volume fraction maintained the same, but the open circuit voltage of the solar cell and its spectrum response at short wavelength increased gradually. Base on the optimized deposition parameters, single junction solar cells with conversion efficiency of 6.48% (AM0,25℃ ) were fabricated. Finally, tandem solar cells on stainless steel flexible substrate with conversion efficiency of 9. 28% ( AM0,25℃) were obtained.%采用等离子增强化学气相沉积(PECVD)技术制备了系列本征微晶硅薄膜材料和nip单结微晶硅太阳电池,研究了硅烷浓度、衬底温度和辉光功率等沉积参数与薄膜材料性能、薄膜电池性能三者之间的关系.拉曼光谱和器件测试结果表明:随硅烷浓度的增加,本征层晶化率逐渐减小,直至转变为非晶硅;沉积温度高于200℃时,电池性能严重恶化;随等离子辉光功率增加,材料晶化率保持不变,而电池开路电压逐渐增大,短波光谱响应逐渐增强.在此基础上,优化了单结微晶硅电池沉积参数,得到效率为6.48% (AM0,25℃)的单结微晶硅薄膜太阳电池;并将其应用到非晶硅/微晶硅叠层电池中,在不锈钢柔性衬底上得到效率为9.28%( AM0,25℃)的叠层电池.

  12. Light Scattering and Current Enhancement for Microcrystalline Silicon Thin-Film Solar Cells on Aluminium-Induced Texture Glass Superstrates with Double Texture

    Directory of Open Access Journals (Sweden)

    Yunfeng Yin

    2015-01-01

    Full Text Available Microcrystalline silicon (μc-Si:H thin-film solar cells are processed on glass superstrates having both micro- and nanoscale surface textures. The microscale texture is realised at the glass surface, using the aluminium-induced texturing (AIT method, which is an industrially feasible process enabling a wide range of surface feature sizes (i.e., 700 nm–3 μm of the textured glass. The nanoscale texture is made by conventional acid etching of the sputter-deposited transparent conductive oxide (TCO. The influence of the resulting “double texture” on the optical scattering is investigated by means of atomic force microscopy (AFM (studying the surface topology, haze measurements (studying scattering into air, and short-circuit current enhancement measurements (studying scattering into silicon. A predicted enhanced optical scattering efficiency is experimentally proven by a short-circuit current enhancement ΔIsc of up to 1.6 mA/cm2 (7.7% relative increase compared to solar cells fabricated on a standard superstrate, that is, planar glass covered with nanotextured TCO. Enhancing the autocorrelation length (or feature size of the AIT superstrates might have the large potential to improve the μc-Si:H thin-film solar cell efficiency, by reducing the shunting probability of the device while maintaining a high optical scattering performance.

  13. Mechanism insight into the effect of I/P buffer layer on the performance of NIP-type hydrogenated microcrystalline silicon solar cells

    Science.gov (United States)

    Bai, Lisha; Liu, Bofei; Zhao, Jing; Suo, Song; Hou, Guofu; Zhang, Dekun; Sun, Jian; Wei, Changchun; Zhao, Ying; Zhang, Xiaodan

    2015-05-01

    A simulation and experimental study on the effect of the buffer layer at the I/P interface on the performance of NIP-type hydrogenated microcrystalline silicon (μc-Si:H) single-junction solar cells is presented. Device-quality hydrogenated amorphous silicon (a-Si:H) material as a buffer layer at the I/P interface obviously improves the performance of NIP-type μc-Si:H single-junction solar cells. In addition to the well-known mechanism that an a-Si:H I/P buffer layer can reduce the recombination current density at I/P interfaces, the optically and electrically calibrated simulations and supporting experimental results in this study illustrate that the performance improvement also originates from the mitigation of the electric screening effect due to the reduced defect density at the I/P interfaces, which reinforces the bulk electric field. Integrating an optimized hydrogen profiling strategy and adding a-Si:H I/P buffer layer yielded an initial efficiency of 9.20% for μc-Si:H single-junction solar cells with an active area of 0.27 cm2. This study may provide new ideas of further improving the performance of NIP-type μc-Si:H single-junction solar cells by mitigating the electric screening effect.

  14. Compaction mechanism and tablet strength of unlubricated and lubricated (silicified) microcrystalline cellulose

    NARCIS (Netherlands)

    van Veen, B; Bolhuis, G K; Wu, Y S; Zuurman, K; Frijlink, H W

    This paper describes the differences in compaction properties between microcrystalline cellulose (MCC) and microcrystalline cellulose co-processed with colloidal silicon dioxide (SMCC). The different compaction parameters are not only compared for the pure materials, but also for the lubricated

  15. N-type crystalline silicon films free of amorphous silicon deposited on glass by HCl addition using hot wire chemical vapour deposition.

    Science.gov (United States)

    Chung, Yung-Bin; Park, Hyung-Ki; Lee, Sang-Hoon; Song, Jean-Ho; Hwang, Nong-Moon

    2011-09-01

    Since n-type crystalline silicon films have the electric property much better than those of hydrogenated amorphous and microcrystalline silicon films, they can enhance the performance of advanced electronic devices such as solar cells and thin film transistors (TFTs). Since the formation of amorphous silicon is unavoidable in the low temperature deposition of microcrystalline silicon on a glass substrate at temperatures less than 550 degrees C in the plasma-enhanced chemical vapour deposition and hot wire chemical vapour deposition (HWCVD), crystalline silicon films have not been deposited directly on a glass substrate but fabricated by the post treatment of amorphous silicon films. In this work, by adding the HCl gas, amorphous silicon-free n-type crystalline silicon films could be deposited directly on a glass substrate by HWCVD. The resistivity of the n-type crystalline silicon film for the flow rate ratio of [HCl]/[SiH4] = 7.5 and [PH3]/[SiH4] = 0.042 was 5.31 x 10(-4) ohms cm, which is comparable to the resistivity 1.23 x 10(-3) ohms cm of films prepared by thermal annealing of amorphous silicon films. The absence of amorphous silicon in the film could be confirmed by high resolution transmission electron microscopy.

  16. Light trapping and optical losses in microcrystalline silicon pin solar cells deposited on surface-textured glass/ZnO substrates

    Energy Technology Data Exchange (ETDEWEB)

    Springer, J. [Forschungszentrum Julich GmbH, Julich (Germany). Institute of Photovoltaics; Academy of Sciences of the Czech Republic, Prague (Czech Republic). Institute of Physics; Rech, B.; Reetz, W.; Muller, J. [Forschungszentrum Julich GmbH, Julich (Germany). Institute of Photovoltaics; Vanecek, M. [Academy of Sciences of the Czech Republic, Prague (Czech Republic). Institute of Physics

    2005-01-01

    Influence of front TCO thickness, surface texture and different back reflectors on short-circuit current density and fill factor of thin film silicon solar cells were investigated. For the front TCO studies, we used ZnO layers of different thickness and applied wet chemical etching in diluted HCl. This approach allowed us to adjust ZnO texture and thickness almost independently. Additionally, we used optical modeling to calculate optical absorption losses in every layer. Results show that texture and thickness reduction of front ZnO increase quantum efficiency over the whole spectral range. The major gain is in the red/IR region. However, the higher sheet resistance of the thin ZnO causes a reduction in fill factor. In the back reflector studies, we compared four different back reflectors: ZnO/Ag, Ag, ZnO/Al and Al. ZnO/Ag yielded the best, Al the worst light trapping properties. Furthermore, the Ag back contact turned out to be superior to ZnO/Al for microcrystalline cells. Finally, the smooth ZnO/Ag back contact showed a higher reflectivity than the rough one. We prepared pin cells with rough and smooth ZnO/Ag interface, leaving the roughness of all other interfaces unchanged. (author)

  17. Decoupling crystalline volume fraction and V{sub OC} in microcrystalline silicon pin solar cells by using a {mu}c-Si:F:H intrinsic layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Q.; Johnson, E.V.; Djeridane, Y.; Abramov, A.; Roca i Cabarrocas, P. [LPICM-CNRS, Ecole Polytechnique, Palaiseau (France)

    2008-08-15

    Microcrystalline silicon thin film pin solar cells with a highly crystallized intrinsic {mu}c-Si:F:H absorber were prepared by RF-plasma enhanced chemical vapour deposition using SiF{sub 4} as the gas precursor. The cells were produced with a vacuum break between the doped layer and intrinsic layer depositions, and the effect of different subsequent interface treatment processes was studied. The use of an intrinsic {mu}c-Si:H p/i buffer layer before the first air break increased the short circuit current density from 22.3 mA/cm{sup 2} to 24.7 mA/cm{sup 2}. However, the use of a hydrogen-plasma treatment after both air breaks without an interface buffer layer improved both the open circuit voltage and the fill factor. Although the material used for the absorber layer showed a very high crystalline fraction and thus an increased spectral response at long wavelengths, an open-circuit voltage (V{sub OC}) of 0.523 V was nevertheless observed. Such a value of V{sub OC} is higher than is typically obtained in devices that employ a highly crystallized absorber as reported in the literature (see abstract figure). Using a hydrogen-plasma treatment, a single junction {mu}c-Si:F:H pin solar cell with an efficiency of 8.3% was achieved. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Development of Hydrogenated Microcrystalline Silicon-Germanium Alloys for Improving Long-Wavelength Absorption in Si-Based Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Yen-Tang Huang

    2014-01-01

    Full Text Available Hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H alloys were developed for application in Si-based thin-film solar cells. The effects of the germane concentration (RGeH4 and the hydrogen ratio (RH2 on the μc-Si1-xGex:H alloys and the corresponding single-junction thin-film solar cells were studied. The behaviors of Ge incorporation in a-Si1-xGex:H and μc-Si1-xGex:H were also compared. Similar to a-Si1-xGex:H, the preferential Ge incorporation was observed in μc-Si1-xGex:H. Moreover, a higher RH2 significantly promoted Ge incorporation for a-Si1-xGex:H, while the Ge content was not affected by RH2 in μc-Si1-xGex:H growth. Furthermore, to eliminate the crystallization effect, the 0.9 μm thick absorbers with a similar crystalline volume fraction were applied. With the increasing RGeH4, the accompanied increase in Ge content of μc-Si1-xGex:H narrowed the bandgap and markedly enhanced the long-wavelength absorption. However, the bias-dependent EQE measurement revealed that too much Ge incorporation in absorber deteriorated carrier collection and cell performance. With the optimization of RH2 and RGeH4, the single-junction μc-Si1-xGex:H cell achieved an efficiency of 5.48%, corresponding to the crystalline volume fraction of 50.5% and Ge content of 13.2 at.%. Compared to μc-Si:H cell, the external quantum efficiency at 800 nm had a relative increase by 33.1%.

  19. Microcrystalline Silicon Films and Solar Cells Prepared by Photochemical Vapor Deposition on Textured SnO2 with High Haze Factors

    Science.gov (United States)

    Zhao, Ying; Miyajima, Shinsuke; Ide, Yoshinori; Yamada, Akira; Konagai, Makoto

    2002-11-01

    Microcrystalline silicon (μc-Si) films and solar cells were prepared by mercury-sensitized photochemical vapor deposition (photo-CVD). The changes in the structural properties of a series of μc-Si films grown under various H2 dilution and deposition pressure conditions were discussed. The results indicated that the properties of μc-Si films depend strongly on the atomic hydrogen. The microstructures of μc-Si films on textured SnO2 with different haze factors (from 13% to 65%) were observed with a scanning electron microscope and a transmission electron microscope. The observations revealed that the μc-Si layers grew from the initial stage of deposition with columnar grains and that they were conformal to the surface of textured SnO2. The grain boundary density of μc-Si film on SnO2 with higher haze factors was lower than that on SnO2 with lower haze factors. The effect of textured SnO2 with different haze ratios on p-i-n μc-Si cell characteristics was discussed and it was found that the higher haze factors showed a higher degree of light trapping in our μc-Si cells. We deposited μc-Si cells with an intrinsic μc-Si layer thickness of 430 nm on a textured SnO2 sample with a haze factor of 42% and achieved a conversion efficiency of 6.55%.

  20. Development of Tandem Amorphous/Microcrystalline Silicon Thin-Film Large-Area See-Through Color Solar Panels with Reflective Layer and 4-Step Laser Scribing for Building-Integrated Photovoltaic Applications

    Directory of Open Access Journals (Sweden)

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film large-area see-through color solar modules were successfully designed and developed for building-integrated photovoltaic applications. Novel and key technologies of reflective layers and 4-step laser scribing were researched, developed, and introduced into the production line to produce solar panels with various colors, such as purple, dark blue, light blue, silver, golden, orange, red wine, and coffee. The highest module power is 105 W and the highest visible light transmittance is near 20%.

  1. Development of Amorphous/Microcrystalline Silicon Tandem Thin-Film Solar Modules with Low Output Voltage, High Energy Yield, Low Light-Induced Degradation, and High Damp-Heat Reliability

    Directory of Open Access Journals (Sweden)

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film solar modules with low output voltage, high energy yield, low light-induced degradation, and high damp-heat reliability were successfully designed and developed. Several key technologies of passivation, transparent-conducting-oxide films, and cell and segment laser scribing were researched, developed, and introduced into the production line to enhance the performance of these low-voltage modules. A 900 kWp photovoltaic system with these low-voltage panels was installed and its performance ratio has been simulated and projected to be 92.1%, which is 20% more than the crystalline silicon and CdTe counterparts.

  2. Single-Grain Si TFTs Fabricated by Liquid-Si and Long-Pulse Excimer-Laser

    NARCIS (Netherlands)

    Ishihara, R.; Zhang, J.; Trifunovic, M.; Van der Zwan, M.; Takagishi, H.; Kawajiri, R.; Shimoda, T.; Beenakker, C.I.M.

    2012-01-01

    Solution process of silicon using liquid-Si is attractive for fabrication of high-speed flexible electronics. We have fabricated single-grain Si TFTs on location-controlled Si grains with longpulse excimer laser crystallization of spin-coated liquid Si film. The maximum grain diameter is 3.5μm, and

  3. Single Grain Si TFTs for RF and 3D ICs

    NARCIS (Netherlands)

    Ishihara, R.; Baiano, A.; Chen, T.; Derakhshandeh, J.; Tajari Mofrad, M.R.; Danesh, M.; Saputra, N.; Long, J.; Beenakker, C.I.M.

    2009-01-01

    Single-grain Si TFTs have been fabricated using accurate 2D location control of large Si grain with the μ-Czochralski process. TFTs fabricated inside the crystalline islands of 6 μm show a mobility (600cm2/Vs) as high as that of the SOI counterpart, despite of the low-temperature (<350oC) process. B

  4. Device-quality Intrinsic Microcrystalline Silicon Prepared by 13.56MHz PECVD at High Pressure%高压13.56MHz PECVD法沉积器件质量级本征微晶硅材料

    Institute of Scientific and Technical Information of China (English)

    侯国付; 李以钢; 郭群超; 王岩; 薛俊明; 任慧志; 宋建; 张晓丹; 赵颖; 耿新华

    2005-01-01

    In this paper intrinsic hydrogenated microcrystalline silicon (μc-Si: H) thin films and solar cells prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) method at high pressure are reported. Our experimental results demonstrated that either increasing plasma power or decreasing silane concentration always can lead to structural transition from amorphous silicon to microcrystalline silicon, and then the electrical properties changed along with the micro-structural evolution. By optimizing process parameters and using gas purifier, the oxygen concentration was prohibited effectively and then device-qualityμc-Si: H thin films have been got at a relative high deposition rate. Their applications as absorber layers in single-junctionμc-Si: H solar cells with 1.5μm i-layer yielded conversion efficiency of 5.22% without ZnO back reflector and without optimizing p-layer and p/i interface.%本文国内首次报道了采用高压RF-PECVD技术沉积本征微晶硅材料的结果.实验表明,增大等离子体激发功率和减小硅烷浓度都能够使薄膜材料由非晶硅逐渐向微晶硅转变,而结构上的改变使得电学特性也随之改变.通过工艺参数的优化和纯化器的使用,有效地控制了氧的掺杂,在较高的生长速度下得到了器件质量级的本征微晶硅材料.将实验得到的微晶硅作为太阳电池光吸收层,在没有ZnO背电极和没有优化窗口层材料以及p/i界面时,电池的效率达到5.22%,这进一步表明本征微晶硅材料的良好性能.

  5. Transparent Oxide TFTs Fabricated by Atomic Layer Deposition

    Science.gov (United States)

    2014-04-17

    Fabrication of ZnO TFTs A diagram of the bottom-gate-type ZnO TFTs fabricated in this study is shown in Fig. 3. Fifty-nanometer-thick SiO2 or Al2O3 gate...Hattori, N. Miyatake, M. Horita, Y. Ishikawa and Y. Uraoka: Jpn. J. Appl. Phys. 51 (2012) 02BF04. [19] R. Martins, P. Barquinha, I. Ferreira, L

  6. 本征微晶硅薄膜的结构演变及其对太阳电池光伏性能的影响%The Microstructure Evolution of Intrinsic Microcrystalline Silicon Films and Its Influence on the Photovoltaic Performance of Thin-Film Silicon Solar Cells

    Institute of Scientific and Technical Information of China (English)

    袁育杰; 侯国付; 张建军; 薛俊明; 赵颖; 耿新华

    2008-01-01

    Hydrogenated microcrystalline silicon(μc-Si:H)intrinsic films and solar ceils are prepared by plasma enhanced chemical vapor deposition(PECVD)with various hydrogen dilution ratios.The influence of hydrogen dilution ratios on electrical characteristics is investigated to study the phase transition from amorphous to microcrystalline silicon.During the deposition process,the optical emission spectroscopy(OES)from plasma is recorded and compared with the Raman spectra of the films,by which the microstructure evolution of different H2 dilution ratios and its influence on the performance of μc-Si:H n-i-P solar ceils is investigated.%采用高压射频等离子体增强化学气相沉积(RF-PECVD)方法制备本征硅薄膜和n-i-P结构太阳电池,研究了氢稀释率对本征硅薄膜的电学特性和结构特性的影响.采用光发射谱(OES)和喇曼(Raman)散射光谱研究了处于过渡区的本征硅薄膜的纵向结构演变过程.结果表明:光发射谱和喇曼散射光谱可以作为研究硅薄膜的纵向结构演变有效手段.随着氢稀释率的增加,硅薄膜从非晶相向微晶相过渡时,其纵向结构的改变会严重影响硅薄膜太阳电池的光伏性能.

  7. Pin solar cells based on amorphous and microcrystalline silicon. Final report; PIN-Solarzellen auf der Basis von amorphem und mikrokristallinem Silizium mit stabilisierten hohen Wirkungsgraden. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Schubert, M.B.; Brummack, H.

    1998-12-01

    We develop solar cells based on amorphous and nanocrystalline silicon thin films. Transient forward current switching and time-of-flight measurements are applied to qualify real solar cells. The main goal of this programme is attaining high and stable photovoltaic conversion efficiencies. In order to optimise efficiency, we had to carefully analyse the performance-limiting interfaces by joint in-situ ellipsometry and atomic force microscopy investigations. Several methods of improving the interface between transparent conducting oxide (TCO) and the p-doped window layers have been tested, and the kinetic and spectroscopic ellipsometry data provide a detailed knowledge on the initial growth of amorphous as well as nanocrystalline silicon layers. CO{sub 2} plasma treatment turns out to grow a protecting silicon oxide layer by chemical transport, ZnO proves to be the chemically most stable TCO option. Initial efficiencies exceeding 10% and stabilising at 8.4% in aSi:H tandem structures have been achieved by proper hydrogen dilution of the process gases. Hydrogen dilution does also play a very important role for improving the electronic quality of nanocrystalline silicon from very high frequency (VHF) plasma deposition or thermocatalytic hot-wire CVD. Aiming at high efficiency nanocrystalline bottom cells for micromorph stacked solar cell arrangements, we show the large-area feasibility of the high-rate deposition method and analyse the impact of the deposition parameters on optic and electronic film properties. (orig.) [Deutsch] Im Rahmen des Vorhabens wurden Duennschichtsolarzellen auf der Basis amorphen und nanokristallinen Siliciums entwickelt und im Hinblick auf hohe stabilisierte Wirkungsgrade optimiert. Tandemstrukturen aus amorphem Silicium erreichen anfaenglich photovoltaische Wandlungswirkungsgrade ueber 10% und stabilisierte Werte von 8,4%. Ein erster Schwerpunkt der Untersuchungen lag bei der Optimierung der kritischen TCO/p- und p/i-Grenzflaechen. Der

  8. Single Grain TFTs for High Speed Flexible Electronics

    NARCIS (Netherlands)

    Baiano, A.

    2009-01-01

    SG-TFTs fabricated by the μ-Czochralski process have already reached a performance as high as that of SOI MOSFET devices. However, one of the most important and challenging goals is extending SG-TFT technology to reach a higher level of performance than that achieved with SOI technology. This thesis

  9. Radiation damage in flexible TFTs and organic detectors

    OpenAIRE

    Almeida, Maria Teresa Gonçalves Lobato de

    2015-01-01

    In this thesis was investigated the radiation hardness of the building blocks of a future flexible X-ray sensor system. The characterized building blocks for the pixel addressing and signal amplification electronics are high mobility semiconducting oxide transistors (HMSO-TFTs) and organic transistors (OTFTs), whereas the photonic detection system is based on organic semiconducting single crystals (OSSCs). TFT parameters such as mobility, threshold voltage and subthreshold slope were measured...

  10. High-performance sidewall damascened tri-gate poly-si TFTs with the strain proximity free technique and stress memorization technique

    Science.gov (United States)

    Hsieh, Dong-Ru; Kuo, Po-Yi; Lin, Jer-Yi; Chen, Yi-Hsuan; Chang, Tien-Shun; Chao, Tien-Sheng

    2017-02-01

    In this paper, strained channel-sidewall damascened tri-gate polycrystalline silicon thin-film transistors (SC-SWDTG TFTs) have been successfully fabricated and then demonstrated by an innovative process flow. This process flow without the use of advanced lithography processes combines the sidewall damascened technique (SWDT) and two strain techniques, namely, the strain proximity free technique (SPFT), and the stress memorization technique (SMT), in the poly-Si channels. It has some advantages: (1) the channel shapes and dimensions can be effectively controlled by the wet etching processes and the deposition thickness of the tetraethoxysilane (TEOS) oxide; (2) the source/drain (S/D) resistance can be significantly decreased by the formation of the raised S/D structures; (3) the SPFT, SMT, and the rapid thermal annealing (RTA) treatment can enhance the performance of the SC-SWDTG TFTs without the limitation of the highly scaling stress liner thickness in deep-submicron TFTs. Thus, the SC-SWDTG TFTs exhibit a steep subthreshold swing (S.S.) ˜ 110 mV/dec., an extremely small drain induced barrier lowing (DIBL) ˜12.2 mV V-1, and a high on/off ratio ˜107 (V D = 1 V) without plasma treatments for future three-dimensional integrated circuits (3D ICs) applications.

  11. A Study of GSZO TFTs for Fabrication on Plastic Substrates

    Science.gov (United States)

    2014-01-01

    of a-IGZO and a-GSZO films and TFTs to extract the effects of constituent metal cations. Comparison of the TFT performances between the a-IGZO and a...Subsequently the sample is treated in pure O2 plasma to assist in the removal of remaining organics and solvents to assure proper adhesion of the...PEN was placed on a Si substrate using adhesive to prevent stress damage to the devices. First molybdenum (Mo) was deposited onto the PEN and the

  12. Deposition of thin layers of boron nitrides and hydrogenated microcrystalline silicon assisted by high current direct current arc plasma; Deposition assistee par un plasma a arc a haut courant continu de couches minces de Nitrure de Bore et de Silicium microcristallin hydrogene

    Energy Technology Data Exchange (ETDEWEB)

    Franz, D. [Ecole Polytechnique Federale de Lausanne, Centre de Recherches en Physique des Plasmas (CRPP), CH-1015 Lausanne (Switzerland)

    1999-09-01

    In the frame of this thesis, a high current direct current arc (HCDCA) used for the industrial deposition of diamond, has been adapted to study the deposition of two types of coatings: a) boron nitride, whose cubic phase is similar to diamond, for tribological applications, b) hydrogenated microcrystalline silicon, for applications in the semiconductor fields (flat panel displays, solar cells,...). For the deposition of these coatings, the substrates were placed in the diffusion region of the arc. The substrate heating is mainly due to atomic species recombining on its surface. The deposition temperature, varying from 300 to 900 {sup o}C according to the films deposited, is determined by the substrate position, the arc power and the injected gas fluxes, without the use of any external heating or cooling system. Measurements performed on the arc plasma show that the electronic temperature is around 2 eV (23'000 K) while the gas temperature is lower than 5500 K. Typical electronic densities are in the range of 10{sup 12}-10{sup 1'}3 cm{sup -3}. For the deposition of boron nitride films, different boron precursors were used and a wide parameter range was investigated. The extreme difficulty of synthesising cubic boron nitride films by chemical vapour deposition (CVD) did not allow to stabilize the cubic phase of boron nitride in HCDCA. Coatings resulted in hexagonal or amorphous boron nitride with a chemical composition close to stoichiometric. The presence of hydrogen leads to the deposition of rough and porous films. Negative biasing of the samples, for positive ion bombardment, is commonly used to stabilize the cubic phase. In HCDCA and in our biasing range, only a densification of the films could be observed. A boron nitride deposition plasma study by infrared absorption spectroscopy in a capacitive radio frequency reactor has demonstrated the usefulness of this diagnostic for the understanding of the various chemical reactions which occur in this kind

  13. Effect of Ag doping on the electrical properties of thermally deposited CdS-La2O3 TFTs

    Science.gov (United States)

    Gogoi, Paragjyoti; Saikia, Rajib

    2012-06-01

    In this article, we have reported the fabrication of CdS thin film transistors (TFTs) doped with Ag by thermal evaporation technique on chemically cleaned glass substrates using multiple pumps down process. High-k rare earth oxide La2O3 is used as gate dielectric in CdS TFTs. Some important electrical parameters have been evaluated using Weimer's model. The electrical parameters are compared with the parameters of undoped CdS TFTs. The Ag-doped CdS TFTs exhibit a high mobility of 6.1 cm2 V-1 s-1 than that of the undoped CdS TFTs, mobility of which is found as 6.25 × 10-2 cm2 V-1 s-1. The TFTs also exhibit low threshold voltage. Both Ag-doped and undoped TFTs are characterised using Levinson et al. model.

  14. Improved Photo-Induced Stability in Amorphous Metal-Oxide Based TFTs for Transparent Displays.

    Science.gov (United States)

    Koo, Sang-Mo; Ha, Tae-Jun

    2015-10-01

    In this paper, we investigate the origin of photo-induced instability in amorphous metal-oxide based thin-film transistors (oxide-TFTs) by exploring threshold voltage (Vth) shift in transfer characteristics. The combination of photo irradiation and prolonged gate bias stress enhanced the shift in Vth in amorphous hafnium-indium-zinc-oxide (a-HfIZO) TFTs. Such results stem from the extended trapped charges at the localized defect states related to oxygen vacancy which play a role in a screening effect on the electric field induced by gate voltage. We also demonstrate the chemically clean interface in oxide-TFTs by employing oxygen annealing which reduces the density of trap states, thereby resulting in improved photo-induced stability. We believe that this work stimulates the research society of transparent electronics by providing a promising approach to suppress photo-induced instability in metal-oxide TFTs.

  15. Low-temperature fabricated TFTs on polysilicon stripes

    NARCIS (Netherlands)

    Brunets, I.; Holleman, J.; Kovalgin, A.Y.; Boogaard, A.; Schmitz, J.

    2009-01-01

    This paper presents a novel approach to make highperformance CMOS at low temperatures. Fully functional devices are manufactured using back-end compatible substrate temperatures after the deposition of the amorphous-silicon starting material. The amorphous silicon is pretextured to control the locat

  16. Tips and tricks to recognize microcrystalline arthritis

    National Research Council Canada - National Science Library

    Filippucci, Emilio; Di Geso, Luca; Grassi, Walter

    2012-01-01

    .... The knowledge of some tips and tricks in the identification of these findings can play a key role in exploiting the relevant potential of US in microcrystalline arthritis, avoiding errors and misinterpretations...

  17. Tips and tricks to recognize microcrystalline arthritis.

    Science.gov (United States)

    Filippucci, Emilio; Di Geso, Luca; Grassi, Walter

    2012-12-01

    US plays a useful role in diagnosing and monitoring therapy in microcrystalline arthritis, as it may detect both monosodium urate and calcium pyrophosphate crystal aggregates. The knowledge of some tips and tricks in the identification of these findings can play a key role in exploiting the relevant potential of US in microcrystalline arthritis, avoiding errors and misinterpretations. This review provides an in-depth description of simple technical and methodological issues to guide the rheumatologist in daily clinical practice.

  18. Structural Characterization of Sputtered Silicon Thin Films after Rapid Thermal Annealing for Active-Matrix Organic Light Emitting Diode

    Science.gov (United States)

    Mugiraneza, Jean de Dieu; Miyahira, Tomoyuki; Sakamoto, Akinori; Chen, Yi; Okada, Tatsuya; Noguchi, Takashi; Itoh, Taketsugu

    2010-12-01

    The microcrystalline phase obtained by adopting a two-step rapid thermal annealing (RTA) process for rf-sputtered silicon films deposited on thermally durable glass was characterized. The optical properties, surface morphology, and internal stress of the annealed Si films are investigated. As the thermally durable glass substrate allows heating of the deposited films at high temperatures, micro-polycrystalline silicon (micro-poly-Si) films of uniform grain size with a smooth surface and a low internal stress could be obtained after annealing at 750 °C. The thermal stress in the Si films was 100 times lower than that found in the films deposited on conventional glass. Uniform grains with an average grain size of 30 nm were observed by transmission electron microscopy (TEM) in the films annealed at 800 °C. These micro-poly-Si films have potential application for fabrication of uniform and reliable thin film transistors (TFTs) for large scale active-matrix organic light emitting diode (AMOLED) displays.

  19. Driving Method Compensating for the Hysteresis of Polycrystalline Silicon Thin-Film Transistors for Active-Matrix Organic Light-Emitting Diode Displays

    Science.gov (United States)

    Jung, Myoung-Hoon; Kim, Ohyun; Kim, Byeong-Koo; Chung, Hoon-Ju

    2009-05-01

    A new driving method for active-matrix organic light-emitting diode displays is proposed and evaluated. The pixel structure of the proposed driving method is composed of three thin-film transistors (TFTs) and one capacitor. It inserts black data into display images to reset driving TFTs for the purpose of maintaining constant electrical characteristics of driving TFTs. The proposed driving scheme is less sensitive to the hysteresis of low-temperature polycrystalline silicon (LTPS) TFTs than the conventional pixel structure with two TFTs and one capacitor, and this scheme can virtually eliminate the recoverable residual image that occurs owing to the hysteresis characteristics of LTPS TFTs. In the proposed driving scheme, black data are inserted into displayed images so that the motion image quality is improved.

  20. Dynamic Ni gettered by PSG from S-MIC poly-Si and its TFTs

    Institute of Scientific and Technical Information of China (English)

    Meng Zhi-Guo; Li Yang; Wu Chun-Ya; Zhao Shu-Yun; Li Juan; Man Wong; Hoi Sing-Kwok; Xiong Shao-Zhen

    2008-01-01

    A dynamic phosphor-silicate glass (PSG) gettering method is proposed in which the processes of the gettering of Ni by PSG and the crystallizing of á-Si into poly-Si by Ni take place simultaneously. The effects of PSG gettering process on the performances of solution-based metal induced crystallized (S-MIC) poly-Si materials and their thin film transistors (TFTs) are discussed. The crystallization rate is much reduced due to the fact that the Ni as a medium source of crystallization is extracted by the PSG during crystallization at the same time. The boundary between two neighbouriug grains in S-MIC poly-Si with PSG looks blurrier than without PSG. Compared with the TFTs made from S-MIC poly-Si without PSG gettering, the TFTs made with PSG gettering has a reduced gate induced leakage current.

  1. A second-order ΣΔ ADC using sputtered IGZO TFTs

    CERN Document Server

    Correia, Ana Paula Pinto; Goes, João Carlos da Palma

    2016-01-01

    This book discusses the design, electrical simulation and layout of a 2nd-order ∑∆ analog-to-digital converter (ADC), using oxide thin-film transistors (TFTs) technology. The authors provide a unified view of materials science and electronics engineering, in order to guide readers from both fields through key topics. To accomplish this goal, background regarding materials, device physics, characterization techniques, circuit design and layout is given together with a detailed discussion of experimental data. The final simulation results clearly demonstrate the potential of the proposed circuit-level techniques, which enables the implementation of robust and energy efficient ADCs based on oxide TFTs, for moderate resolutions and conversion-rates. Combines materials science and electronics engineering in the same book, making it possible to obtain a general overview, from TFTs production and characterization to their integration in relatively complex circuits; Adapts an a-Si:H TFT RPI model to simulate the ...

  2. Knot Invariants and New Weight Systems from General 3D TFTs

    OpenAIRE

    Qiu, Jian; Zabzine, Maxim

    2010-01-01

    We introduce and study the Wilson loops in a general 3D topological field theories (TFTs), and show that the expectation value of Wilson loops also gives knot invariants as in Chern-Simons theory. We study the TFTs within the Batalin-Vilkovisky (BV) and Alexandrov-Kontsevich-Schwarz-Zaboronsky (AKSZ) framework, and the Ward identities of these theories imply that the expectation value of the Wilson loop is a pairing of two dual constructions of (co)cycles of certain extended graph complex (ex...

  3. High-performance SEGISFET pH Sensor using the structure of double-gate a-IGZO TFTs with engineered gate oxides

    Science.gov (United States)

    Pyo, Ju-Young; Cho, Won-Ju

    2017-03-01

    In this paper, we propose a high-performance separative extended gate ion-sensitive field-effect transistor (SEGISFET) that consists of a tin dioxide (SnO2) SEG sensing part and a double-gate structure amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with tantalum pentoxide/silicon dioxide (Ta2O5/SiO2)-engineered top-gate oxide. To increase sensitivity, we maximized the capacitive coupling ratio by applying high-k dielectric at the top-gate oxide layer. As an engineered top-gate oxide, a stack of 25 nm-thick Ta2O5 and 10 nm-thick SiO2 layers was found to simultaneously satisfy a small equivalent oxide thickness (˜17.14 nm), a low leakage current, and a stable interfacial property. The threshold-voltage instability, which is a fundamental issue in a-IGZO TFTs, was improved by low-temperature post-deposition annealing (˜87 °C) using microwave irradiation. The double-gate structure a-IGZO TFTs with engineered top-gate oxide exhibited high mobility, small subthreshold swing, high drive current, and larger on/off current ratio. The a-IGZO SEGISFETs with a dual-gate sensing mode showed a pH sensitivity of 649.04 mV pH-1, which is far beyond the Nernst limit. The non-ideal behavior of ISFETs, hysteresis, and drift effect also improved. These results show that the double-gate structure a-IGZO TFTs with engineered top-gate oxide can be a good candidate for cheap and disposable SEGISFET sensors.

  4. Study of dynamics of charge trapping in a-Si:H/SiN TFTs

    NARCIS (Netherlands)

    Merticaru, A.R.; Mouthaan, A.J.; Kuper, F.G.

    2001-01-01

    In this paper we present the study of the failure mechanism responsible for long-term degradation that ultimately leads to instability in a-Si:H/SiN TFTs. The experimental data points we obtain by monitoring in-situ the drain current during gate bias stress (forward and reverse bias) and relaxation

  5. Circuits and AMOLED display with self-aligned a-IGZO TFTs on polyimide foil

    NARCIS (Netherlands)

    Nag, M.; Bhoolokam, A.; Smout, S.; Willegems, M.; Muller, R.; Myny, K.; Schols, S.; Ameys, M.; Genoe, J.; Ke, T.H.; Vicca, P.; Ellis, T.; Cobb, B.; Kumar, A.; Steen, J.L.P.J. van der; Gelinck, G.; Fukui, Y.; Obata, K.; Groeseneken, G.; Heremans, P.; Steudel, S.

    2015-01-01

    A process to make self-aligned top-gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) on polyimide foil is presented. The source/drain (S/D) region's parasitic resistance reduced during the SiN interlayer deposition step. The sheet resistivity of S/D region after exposure

  6. Noise and degradation of amorphous silicon devices

    NARCIS (Netherlands)

    Bakker, J.P.R.

    2003-01-01

    Electrical noise measurements are reported on two devices of the disordered semiconductor hydrogenated amorphous silicon (a-Si:H). The material is applied in sandwich structures and in thin-film transistors (TFTs). In a sandwich configuration of an intrinsic layer and two thin doped layers, the obse

  7. Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2015-04-01

    Full Text Available This study proposes a two-photomask process for fabricating amorphous indium–gallium–zinc oxide (a-IGZO thin-film transistors (TFTs that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES layers, have undamaged a-IGZO active layers that facilitate superior performance. In addition, we demonstrate a bilayer passivation method that uses a polytetrafluoroethylene (Teflon and SiO2 combination layer for improving the electrical reliability of the fabricated TFTs. Teflon was deposited as a buffer layer through thermal evaporation. The Teflon layer exhibited favorable compatibility with the underlying IGZO channel layer and effectively protected the a-IGZO TFTs from plasma damage during SiO2 deposition, resulting in a negligible initial performance drop in the a-IGZO TFTs. Compared with passivation-free a-IGZO TFTs, passivated TFTs exhibited superior stability even after 168 h of aging under ambient air at 95% relative humidity.

  8. Improved electrical properties of zinc-tin oxide TFTs by inkjet process optimization

    Science.gov (United States)

    Lee, Seung-Hyun; Choi, Woon-Seop

    2014-07-01

    Inkjet printing process was optimized to improve the electrical properties of inkjet-printed zinc-tin oxide thin-film transistors. Among the process conditions evaluated, inkjet voltage and substrate temperature were found to be the key factors for obtaining uniform thin-films and good thin-film transistors. The optimization process with a jetting voltage of 60 V and substrate temperature of 50°C gave good electrical properties, such as a field-effect mobility of 5.11 cm2/V s, a threshold voltage of 2.83 V, a subthreshold slope of 1.33 V/dec, and an on-to-off current ratio of 108. The electrical properties of the inkjet-optimized TFTs were superior to those of the unoptimized inkjet TFTs. A positive bias stability was also investigated.

  9. Inkjet-printed zinc-tin-oxide TFTs with a solution-processed hybrid dielectric layer

    Science.gov (United States)

    Jang, Hye-Ryun; Kwack, Young-Jin; Choi, Woon-Seop

    2014-11-01

    Sol-gel TiO2 was synthesized and used as a gate dielectric for oxide thin-film transistors (TFTs). A hybrid gate insulator composed of sol-gel TiO2/thermally-grown SiO2 was applied to the inkjet-printed zinc-tin oxide (ZTO) TFTs for the first time. The electrical properties of an inkjet-printed ZTO TFT with a hybrid gate insulator show a mobility of 0.17 cm2/Vs, an on-to-off current ratio of 5 × 104, a subthreshold slope of 0.8 V/dec, and a threshold voltage of 0.6 V. The hybrid gate insulator for the inkjet-printed ZTO TFT shows a much improved operating voltage and subthreshold slope and a lower mobility compared to the SiO2 gate insulator.

  10. Knot Invariants and New Weight Systems from General 3D TFTs

    CERN Document Server

    Qiu, Jian

    2010-01-01

    We introduce and study the Wilson loops in a general 3D topological field theories (TFTs), and show that the expectation value of Wilson loops also gives knot invariants as in Chern-Simons theory. We study the TFTs within the Batalin-Vilkovisky (BV) and Alexandrov-Kontsevich-Schwarz-Zaboronsky (AKSZ) framework, and the Ward identities of these theories imply that the expectation value of the Wilson loop is a pairing of two dual constructions of (co)cycles of certain extended graph complex (extended from Kontsevich's graph complex to accommodate the Wilson loop). We also prove that there is an isomorphism between the same complex and certain extended Chevalley-Eilenberg complex of Hamiltonian vector fields. This isomorphism allows us to generalize the Lie algebra weight system for knots to weight systems associated with any homological vector field and its representations. As an example we construct knot invariants using holomorphic vector bundle over hyperKahler manifolds.

  11. Knot invariants and new weight systems from general 3D TFTs

    Science.gov (United States)

    Qiu, Jian; Zabzine, Maxim

    2012-02-01

    We introduce and study the Wilson loops in general 3D topological field theories (TFTs), and show that the expectation value of Wilson loops also gives knot invariants as in the Chern-Simons theory. We study the TFTs within the Batalin-Vilkovisky (BV) and the Alexandrov-Kontsevich-Schwarz-Zaboronsky (AKSZ) framework, and the Ward identities of these theories imply that the expectation value of the Wilson loop is a pairing of two dual constructions of (co)cycles of certain extended graph complex (extended from Kontsevich's graph complex to accommodate the Wilson loop). We also prove that there is an isomorphism between the same complex and certain extended Chevalley-Eilenberg complex of Hamiltonian vector fields. This isomorphism allows us to generalize the Lie algebra weight system for knots to weight systems associated with any homological vector field and its representations. As an example we construct knot invariants using holomorphic vector bundle over hyperKähler manifolds.

  12. Solution based zinc tin oxide TFTs: the dual role of the organic solvent

    Science.gov (United States)

    Salgueiro, Daniela; Kiazadeh, Asal; Branquinho, Rita; Santos, Lídia; Barquinha, Pedro; Martins, Rodrigo; Fortunato, Elvira

    2017-02-01

    Chemical solution deposition is a low cost, scalable and high performance technique to obtain metal oxide thin films. Recently, solution combustion synthesis has been introduced as a chemical route to reduce the processing temperature. This synthesis method takes advantage of the chemistry of the precursors as a source of energy for localized heating. According to the combustion chemistry some organic solvents can have a dual role in the reaction, acting both as solvent and fuel. In this work, we studied the role of 2-methoxyethanol in solution based synthesis of ZTO thin films and its influence on the performance of ZTO TFTs. The thermal behaviour of ZTO precursor solutions confirmed that 2-methoxyethanol acts simultaneously as a solvent and fuel, replacing the fuel function of urea. The electrical characterization of the solution based ZTO TFTs showed a slightly better performance and lower variability under positive gate bias stress when urea was not used as fuel, confirming that the excess fuel contributes negatively to the device operation and stability. Solution based ZTO TFTs demonstrated a low hysteresis (ΔV  =  -0.3 V) and a saturation mobility of 4-5 cm2 V-1 s-1.

  13. Electrical detection of spin coherence in microcrystalline pin solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Behrends, Jan [Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Berlin (Germany); Department of Physics, University of Utah, Salt Lake City, UT (United States); Boehme, Christoph; Lips, Klaus [Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Berlin (Germany); Haas, Stefan [Institute of Photovoltaics, Forschungszentrum Juelich, Juelich (Germany); Rech, Bernd [Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Berlin (Germany); Institute of Photovoltaics, Forschungszentrum Juelich, Juelich (Germany)

    2007-07-01

    Defects in the band gap of hydrogenated microcrystalline silicon ({mu}cSi:H) pin solar cells, even at low concentrations, can act as recombination centres and thus, they can influence the electronic properties of the device significantly. A powerful technique to investigate these recombination processes is pulsed electrically detected magnetic resonance (pEDMR). This method is based on transient photocurrent measurements after varying specific recombination or transport rates and reveals information about the microscopic mechanisms of recombination and transport that involve paramagnetic states. In this study we report on the application of pEDMR on state-of-the-art {mu}c-Si:H pin solar cells prepared on ZnO coated glass. An adapted contact structure allows the observation of Rabi oscillations in the photocurrent at low temperatures (T=10 K) reflecting coherent spin motion. The coherence time is found to be on the order of several hundred nanoseconds and is determined by recombination. A Fourier analysis of the observed Rabi oscillations allows a distinction between the involved recombination processes. A discussion on the different recombination mechanisms in {mu}c-Si:H cells is given.

  14. Silicon-based thin-film transistors with a high stability

    NARCIS (Netherlands)

    Stannowski, Bernd

    2002-01-01

    Thin-Film Transistors (TFTs) are widely applied as pixel-addressing devices in large-area electronics, such as active-matrix liquid-crystal displays (AMLCDs) or sensor arrays. Hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiNx:H) are generally used as the semiconductor and the insul

  15. Silicon-based thin-film transistors with a high stability

    NARCIS (Netherlands)

    Stannowski, Bernd

    2002-01-01

    Thin-Film Transistors (TFTs) are widely applied as pixel-addressing devices in large-area electronics, such as active-matrix liquid-crystal displays (AMLCDs) or sensor arrays. Hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiNx:H) are generally used as the semiconductor and the

  16. Single-grain Si TFTs for high-speed flexible electronics

    Science.gov (United States)

    Ishihara, Ryoichi; Chen, Tao; van der Zwan, Michiel; He, Ming; Schellevis, H.; Beenakker, Kees

    2011-03-01

    Existent flat-panel display is mechanically stiff because it requires external connection of IC chips. At its present stage, displays with a-Si, metal oxide semiconductor or organic TFTs require still external connection of data driver and controllers, because of their low carrier mobilities. We will review our recent progress on direct formation of high speed Si circuits fabricated with a plastic compatible temperature. Large Si grains with a diameter of 4 microns were formed on predetermined positions by a pulsed laser crystallization process with a plastic compatible temperature. High performance transistors were fabricated inside a single Si grain.

  17. Fabrication of c-Si:H(p)/c-Si(n) Heterojunction Solar Cells with Microcrystalline Emitters

    Institute of Scientific and Technical Information of China (English)

    ZHOU Bing-Qing; LIU Feng-Zhen; ZHANG Qun-Fang; XU Ying; ZHOU Yu-Qin; LIU Jin-Long; ZHU Mei-Fang

    2006-01-01

    The p-type microcrystalline silicon (fj,c-Si) on n-type crystalline silicon (c-Si) heterojunction solar cells is fabricated by radio-frequency plasma enhanced chemical vapour deposition (rf-PECVD). The effect of the pc-Si:H p-layers on the performance of the heterojunction solar cells is investigated. Optimum μcSi:H p-layer is obtained with hydrogen dilution ratio of 99.65%, rf-power of 0.08 W/cm2, gas phase doping ratio of 0.125%, and the p-layer thickness of 15 nm. We fabricate μc-Si:H(p)/c-Si(n) heterojunction solar cells without texturing and obtained an efficiency of 13.4%. The comparisons of the solar-cell performances using different surface passivation techniques are discussed.

  18. Method for depositing high-quality microcrystalline semiconductor materials

    Science.gov (United States)

    Guha, Subhendu; Yang, Chi C.; Yan, Baojie

    2011-03-08

    A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

  19. Improvement of the positive bias stability of a-IGZO TFTs by the HCN treatment

    Science.gov (United States)

    Kim, Myeong-Ho; Choi, Myung-Jea; Kimura, Katsuya; Kobayashi, Hikaru; Choi, Duck-Kyun

    2016-12-01

    In recent years, many researchers have attempted to improve the bias stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). In this study, the hydrogen cyanide (HCN) treatment was carried out to improve the positive bias stability of bottom-gate a-IGZO TFTs. The HCN treatment was performed using a 0.1 M HCN solution with a pH of 10 at room temperature. Before applying the positive bias stress, there were no differences in the major electrical properties, including the saturation mobility (μsat), threshold voltage (Vth), and subthreshold swing (S/S), between HCN-treated and non-HCN-treated devices. However, after applying the positive bias stress, the HCN-treated device showed superior bias stability compared to the non-HCN-treated device. This difference is associated with the passivation of the defect states and the surface of the back-channel layer of the HCN-treated device by cyanide ions.

  20. Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs).

    Science.gov (United States)

    Kim, Choong-Ki; Kim, Eungtaek; Lee, Myung Keun; Park, Jun-Young; Seol, Myeong-Lok; Bae, Hagyoul; Bang, Tewook; Jeon, Seung-Bae; Jun, Sungwoo; Park, Sang-Hee K; Choi, Kyung Cheol; Choi, Yang-Kyu

    2016-09-14

    An electro-thermal annealing (ETA) method, which uses an electrical pulse of less than 100 ns, was developed to improve the electrical performance of array-level amorphous-oxide-semiconductor (AOS) thin-film transistors (TFTs). The practicality of the ETA method was experimentally demonstrated with transparent amorphous In-Ga-Zn-O (a-IGZO) TFTs. The overall electrical performance metrics were boosted by the proposed method: up to 205% for the trans-conductance (gm), 158% for the linear current (Ilinear), and 206% for the subthreshold swing (SS). The performance enhancement were interpreted by X-ray photoelectron microscopy (XPS), showing a reduction of oxygen vacancies in a-IGZO after the ETA. Furthermore, by virtue of the extremely short operation time (80 ns) of ETA, which neither provokes a delay of the mandatory TFTs operation such as addressing operation for the display refresh nor demands extra physical treatment, the semipermanent use of displays can be realized.

  1. Observation of a microcrystalline gel in colloids with competing interactions.

    Science.gov (United States)

    Zhang, Tian Hui; Groenewold, Jan; Kegel, Willem K

    2009-12-14

    A stable short-range crystalline structure is observed in colloidal systems with competing short-range attractions and long-range repulsions. We term these structures "microcrystalline gels" as the microcrystals are embedded in a dense disordered network.

  2. Additives to silane for thin film silicon photovoltaic devices

    Science.gov (United States)

    Hurley, Patrick Timothy; Ridgeway, Robert Gordon; Hutchison, Katherine Anne; Langan, John Giles

    2013-09-17

    Chemical additives are used to increase the rate of deposition for the amorphous silicon film (.alpha.Si:H) and/or the microcrystalline silicon film (.mu.CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

  3. Channel width dependence of electrical characteristics of a-Si:H TFTs under bending stresses

    Science.gov (United States)

    Oh, Hyungon; Cho, Kyoungah; Kim, Sangsig

    2017-04-01

    In this study, we investigate the electrical characteristics of bendable a-Si:H thin-film transistors (TFTs) with various channel widths as a function of bending stress. Compared with a narrower channel TFT, a wider channel TFT exhibits a stable performance even at a bending strain of 1.3%. Our stress and strain distribution analysis reveals an inverse relationship between the channel width and the channel stress. As the channel width widens from 8 to 50 μm, the stress experienced by the middle channel region decreases from 545 to 277 MPa. Moreover, a 50 μm-channel-width TFT operates stably even after a 15 000 bending cycle while the 8 μm-channel-width TFT fails to operate after a 2000 bending cycle.

  4. Investigation of drain current transient behavior in SLS TFTs with the DLTS technique

    Energy Technology Data Exchange (ETDEWEB)

    Exarchos, M A [National and Kapodistrian University of Athens, Physics Department, Solid State Physics Section, Athens 15784 (Greece); Papaioannou, G J [National and Kapodistrian University of Athens, Physics Department, Solid State Physics Section, Athens 15784 (Greece); Kouvatsos, D N [N.C.S.R. Demokritos, Institute of Microelecronics, Athens 15310 (Greece); Voutsas, A T [L.C.D. Process Technology Laboratory, SHARP Labs of America, Inc., Washington 98607 (United States)

    2005-01-01

    In this work, the study of drain current overshoot transients of thin film transistors (TFTs) fabricated by excimer laser sequential lateral solidification (ELA SLS) process is presented. Drain current transient behavior, is ascribed to carrier capture/emission processes within the transistors' Si body, and represents complex mechanisms differently responding at dark and under illumination conditions. Additionally, the thickness of the Si body film, which is an important parameter for the material structure evaluation, ranged from 30 nm to 100 nm. The results were stemmed by deep level transient spectroscopy (DLTS) technique and measurements were conducted within the temperature interval of 200 K to 400 K. The impact of illumination, contributes mainly at lower temperatures through electron-hole generation processes, compensating though carrier freeze-out phenomena.

  5. Investigation of drain current transient behavior in SLS TFTs with the DLTS technique

    Science.gov (United States)

    Exarchos, M. A.; Papaioannou, G. J.; Kouvatsos, D. N.; Voutsas, A. T.

    2005-01-01

    In this work, the study of drain current overshoot transients of thin film transistors (TFTs) fabricated by excimer laser sequential lateral solidification (ELA SLS) process is presented. Drain current transient behavior, is ascribed to carrier capture/emission processes within the transistors' Si body, and represents complex mechanisms differently responding at dark and under illumination conditions. Additionally, the thickness of the Si body film, which is an important parameter for the material structure evaluation, ranged from 30 nm to 100 nm. The results were stemmed by deep level transient spectroscopy (DLTS) technique and measurements were conducted within the temperature interval of 200 K to 400 K. The impact of illumination, contributes mainly at lower temperatures through electron-hole generation processes, compensating though carrier freeze-out phenomena.

  6. In and Ga Codoped ZnO Film as a Front Electrode for Thin Film Silicon Solar Cells

    OpenAIRE

    Duy Phong Pham; Huu Truong Nguyen; Bach Thang Phan; Thi My Dung Cao; Van Dung Hoang; Vinh Ai Dao; Junsin Yi; Cao Vinh Tran

    2014-01-01

    Doped ZnO thin films have attracted much attention in the research community as front-contact transparent conducting electrodes in thin film silicon solar cells. The prerequisite in both low resistivity and high transmittance in visible and near-infrared region for hydrogenated microcrystalline or amorphous/microcrystalline tandem thin film silicon solar cells has promoted further improvements of this material. In this work, we propose the combination of major Ga and minor In impurities codop...

  7. Investigation into the suitability of capillary tubes for microcrystalline testing.

    Science.gov (United States)

    Elie, Leonie E; Baron, Mark G; Croxton, Ruth S; Elie, Mathieu P

    2013-07-01

    A comparison between microcrystalline tests performed on microscope slides and flat capillary tubes with inner diameters ranging from 0.1 to 0.7 mm was carried out to explore the appropriateness of tubes for rapid testing of suspected drugs of abuse in the laboratory as well as in the field. Tests for mephedrone, cocaine, and phencyclidine were chosen as examples to investigate the handling of the capillary tubes, the influence on crystal habit, size, and the effects on the limit of detection. Image stacking software was used to increase the depth of field of micrographs taken from developed microcrystals greatly enhancing the interpretability even months after carrying out the microcrystalline test. Additionally, the potential of seeding capillary tubes with a reagent was studied. Pre-treatment of tubes would allow microcrystalline tests to be carried out quicker and anywhere without the necessity of taking along expensive and hazardous reagents. The sealing of capillary tubes containing developed microcrystalline tests in order to preserve results for a long period of time was successfully done by applying paraffin wax to the open ends. Finally, it was concluded that capillary tubes are suitable vessels for performing microcrystalline tests. The increased portability of the improved set-up allows tests to be safely executed outside laboratories without impairing the quality of the result. Findings were applied to six legal high samples purchased online between May and August 2011. The active ingredients like MDAI as well as cutting agents like caffeine were successfully identified using the microcrystalline test technique in capillary tubes.

  8. Microcrystalline hexagonal tungsten bronze. 2. Dehydration dynamics.

    Science.gov (United States)

    Luca, Vittorio; Griffith, Christopher S; Hanna, John V

    2009-07-06

    Low-temperature (25-600 degrees C) thermal transformations have been studied for hydrothermally prepared, microcrystalline hexagonal tungsten bronze (HTB) phases A(x)WO(3+x/2).zH(2)O as a function of temperature, where A is an exchangeable cation (in this case Na(+) or Cs(+)) located in hexagonal structural tunnels. Thermal treatment of the as-prepared sodium- and cesium-exchanged phases in air were monitored using a conventional laboratory-based X-ray diffractometer, while thermal transformations in vacuum were studied using synchrotron X-ray and neutron diffraction. Concurrent thermogravimetric, diffuse reflectance infrared (DRIFT), and (23)Na and (133)Cs magic angle spinning (MAS) NMR spectroscopic studies have also been undertaken. For the cesium variant, cell volume contraction occurred from room temperature to about 350 degrees C, the regime in which water was "squeezed" out of tunnel sites. This was followed by a lattice expansion in the 350-600 degrees C temperature range. Over the entire temperature range, a net thermal contraction was observed, and this was the result of an anisotropic change in the cell dimensions which included a shortening of the A-O2 bond length. These changes explain why Cs(+) ions are locked into tunnel positions at temperatures as low as 400 degrees C, subsequently inducing a significant reduction in Cs(+) extractability under low pH (nitric acid) conditions. The changing Cs(+) speciation as detected by (133)Cs MAS NMR showed a condensation from multiple Cs sites, presumably associated with differing modes of Cs(+) hydration in the tunnels, to a single Cs(+) environment upon thermal transformation and water removal. While similar lattice contraction was observed for the as-prepared sodium variant, the smaller radius of Na(+) caused it to be relatively easily removed with acid in comparison to the Cs(+) variant. From (23)Na MAS NMR studies of the parent material, complex Na(+) speciation was observed with dehydrated and various

  9. Electrical properties of plasma-deposited silicon oxide clarified by chemical modeling

    NARCIS (Netherlands)

    Kovalgin, A.Y.; Boogaard, A.; Brunets, I.; Aarnink, A.A.I.; Wolters, R.A.M.

    2009-01-01

    Our study is focused on Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon dioxide films at low temperatures (< 150 oC) using Inductively Coupled (IC) High-Density (HD) plasma source. We recently fabricated Thin Film Transistors (TFTs) with high-quality ICPECVD gate oxides, which exhibited

  10. Silicon nitride at high growth rate using hot wire chemical vapor deposition

    NARCIS (Netherlands)

    Verlaan, V.

    2008-01-01

    Amorphous silicon nitride (SiNx) is a widely studied alloy with many commercial applications. This thesis describes the application of SiNx deposited at high deposition rate using hot wire chemical vapor deposition (HWCVD) for solar cells and thin film transistors (TFTs). The deposition process of H

  11. Silicon nitride at high growth rate using hot wire chemical vapor deposition

    NARCIS (Netherlands)

    Verlaan, V.

    2008-01-01

    Amorphous silicon nitride (SiNx) is a widely studied alloy with many commercial applications. This thesis describes the application of SiNx deposited at high deposition rate using hot wire chemical vapor deposition (HWCVD) for solar cells and thin film transistors (TFTs). The deposition process of H

  12. Spray pyrolysis of ZnO-TFTs utilizing a perfume atomizer

    Science.gov (United States)

    Ortel, Marlis; Trostyanskaya, Yulia Sergeeva; Wagner, Veit

    2013-08-01

    Successful deposition of ZnO layers from non-toxic solvent by utilizing a perfume atomizer is demonstrated. The adsorption edge of the zinc oxide films was found to be 3.22 eV which is in good agreement with literature. In addition it is found that the homogeneity of the films increases in side geometry with increasing distance to the perfume atomizer due to the droplet size distribution along the x-axis of the aerosol. The films were used to fabricate ZnO-TFTs. A dominating influence of the grain sizes can be excluded by correlating atomic force microscopy (AFM) images to the electrical properties of the transistors deposited in different geometries but a strong influence of the transistor performance on the growth rate was found. The increase in performance with decreasing growth rate was attributed to a longer reaction time decreasing the impurity level in the films. The linear mobility, the on-set voltage and the on-off current ratio are found to be 5 cm2 V-1 s-1, 0 V and 106 for small growth rates, respectively. Hence the transistors show high mobility and an excellent switching behavior.

  13. Observation of a microcrystalline gel in colloids with competing interactions

    NARCIS (Netherlands)

    Zhang, T.; Groenewold, J.; Kegel, W.K.

    2009-01-01

    A stable short-range crystalline structure is observed in colloidal systems with competing short-range attractions and long-range repulsions. We term these structures ‘‘microcrystalline gels’’ as the microcrystals are embedded in a dense disordered network.

  14. The stability of tin silicon oxide thin-film transistors with different annealing temperatures

    Science.gov (United States)

    Yang, Jianwen; Fu, Ruofan; Han, Yanbing; Meng, Ting; Zhang, Qun

    2016-07-01

    The influence of annealing temperature on the electrical properties of tin silicon oxide (TSO) thin-film transistors (TFTs) and the corresponding bias stress stability have been investigated. With increasing annealing temperature, the TSO films present a structure which is closer to crystallization, and it is conducive to the improvement of the mobility of TSO TFTs. Meanwhile, the positive bias stress (PBS) stability of TSO TFTs is ameliorated due to the decreasing traps at the interface of dielectric layer and channel layer. The threshold voltage shifts in opposite direction after being stressed under negative bias stress (NBS), which is due to the competition between electrons captured by defects related to oxygen vacancies in the channel layer and water molecule adsorption on the back channel.

  15. Analysis of the inner collection efficiency in hybrid silicon solar cells

    OpenAIRE

    Nubile, P.; Torres, P; Hof, Ch.; Fischer, D.

    2008-01-01

    The collection of photogenerated carriers in hybrid silicon solar cells structures were determined by the DICE (dynamic inner collection efficiency) technique. The hybrid solar cells have a microcrystalline n-type emitter and a crystalline p-type base. Cells with amorphous buffers of several thickness and p+ back surface field microcrystalline layers were also studied. Spectral response and reflectivity were measured for each sample in order to obtain the internal spectral response or quantum...

  16. Friction and Wear Performance of Boron Doped, Undoped Microcrystalline and Fine Grained Composite Diamond Films

    Institute of Scientific and Technical Information of China (English)

    WANG Xinchang; WANG Liang; SHEN Bin; SUN Fanghong

    2015-01-01

    Chemical vapor deposition (CVD) diamond films have attracted more attentions due to their excellent mechanical properties. Whereas as-fabricated traditional diamond films in the previous studies don’t have enough adhesion or surface smoothness, which seriously impact their friction and wear performance, and thus limit their applications under extremely harsh conditions. A boron doped, undoped microcrystalline and fine grained composite diamond (BD-UM-FGCD) film is fabricated by a three-step method adopting hot filament CVD (HFCVD) method in the present study, presenting outstanding comprehensive performance, including the good adhesion between the substrate and the underlying boron doped diamond (BDD) layer, the extremely high hardness of the middle undoped microcrystalline diamond (UMCD) layer, as well as the low surface roughness and favorable polished convenience of the surface fine grained diamond (FGD) layer. The friction and wear behavior of this composite film sliding against low-carbon steel and silicon nitride balls are studied on a ball-on-plate rotational friction tester. Besides, its wear rate is further evaluated under a severer condition using an inner-hole polishing apparatus, with low-carbon steel wire as the counterpart. The test results show that the BD-UM-FGCD film performs very small friction coefficient and great friction behavior owing to its high surface smoothness, and meanwhile it also has excellent wear resistance because of the relatively high hardness of the surface FGD film and the extremely high hardness of the middle UMCD film. Moreover, under the industrial conditions for producing low-carbon steel wires, this composite film can sufficiently prolong the working lifetime of the drawing dies and improve their application effects. This research develops a novel composite diamond films owning great comprehensive properties, which have great potentials as protecting coatings on working surfaces of the wear-resistant and anti

  17. Friction and wear performance of boron doped, undoped microcrystalline and fine grained composite diamond films

    Science.gov (United States)

    Wang, Xinchang; Wang, Liang; Shen, Bin; Sun, Fanghong

    2015-01-01

    Chemical vapor deposition (CVD) diamond films have attracted more attentions due to their excellent mechanical properties. Whereas as-fabricated traditional diamond films in the previous studies don't have enough adhesion or surface smoothness, which seriously impact their friction and wear performance, and thus limit their applications under extremely harsh conditions. A boron doped, undoped microcrystalline and fine grained composite diamond (BD-UM-FGCD) film is fabricated by a three-step method adopting hot filament CVD (HFCVD) method in the present study, presenting outstanding comprehensive performance, including the good adhesion between the substrate and the underlying boron doped diamond (BDD) layer, the extremely high hardness of the middle undoped microcrystalline diamond (UMCD) layer, as well as the low surface roughness and favorable polished convenience of the surface fine grained diamond (FGD) layer. The friction and wear behavior of this composite film sliding against low-carbon steel and silicon nitride balls are studied on a ball-on-plate rotational friction tester. Besides, its wear rate is further evaluated under a severer condition using an inner-hole polishing apparatus, with low-carbon steel wire as the counterpart. The test results show that the BD-UM-FGCD film performs very small friction coefficient and great friction behavior owing to its high surface smoothness, and meanwhile it also has excellent wear resistance because of the relatively high hardness of the surface FGD film and the extremely high hardness of the middle UMCD film. Moreover, under the industrial conditions for producing low-carbon steel wires, this composite film can sufficiently prolong the working lifetime of the drawing dies and improve their application effects. This research develops a novel composite diamond films owning great comprehensive properties, which have great potentials as protecting coatings on working surfaces of the wear-resistant and anti

  18. Reversibility of silicidation of Ta filaments in HWCVD of thin film silicon

    NARCIS (Netherlands)

    van der Werf, C.H.M.; Li, H. B. T.; Verlaan, V.; Oliphant, C.J.; Bakker, R.; Houweling, Z.S.; Schropp, R.E.I.

    2009-01-01

    If tantalum filaments are used for the hot wire chemical vapour deposition (HWCVD) of thin film silicon, various types of tantalum silicides are formed, depending on the filament temperature. Under deposition conditions employed for device quality amorphous and microcrystalline silicon (Twire ≈ 1750

  19. Structural changes in microcrystalline cellulose in subcritical water treatment.

    Science.gov (United States)

    Tolonen, Lasse K; Zuckerstätter, Gerhard; Penttilä, Paavo A; Milacher, Walter; Habicht, Wilhelm; Serimaa, Ritva; Kruse, Andrea; Sixta, Herbert

    2011-07-11

    Subcritical water is a high potential green chemical for the hydrolysis of cellulose. In this study microcrystalline cellulose was treated in subcritical water to study structural changes of the cellulose residues. The alterations in particle size and appearance were studied by scanning electron microscopy (SEM) and those in the degree of polymerization (DP) and molar mass distributions by gel permeation chromatography (GPC). Further, changes in crystallinity and crystallite dimensions were quantified by wide-angle X-ray scattering and (13)C solid-state NMR. The results showed that the crystallinity remained practically unchanged throughout the treatment, whereas the size of the remaining cellulose crystallites increased. Microcrystalline cellulose underwent significant depolymerization in subcritical water. However, depolymerization leveled off at a relatively high degree of polymerization. The molar mass distributions of the residues showed a bimodal form. We infer that cellulose gets dissolved in subcritical water only after extensive depolymerization.

  20. Identification of microcrystalline rocks using thermal emission spectroscopy

    Science.gov (United States)

    Hardgrove, C. J.; Rogers, D.; Glotch, T. D.; Arnold, J. A.

    2015-12-01

    High-silica deposits on Mars have been discovered from orbit (Holden Crater, Mawrth Vallis) and from landed surface missions to both Gusev Crater (Spirit) and Gale Crater (Curiosity). The character of these silica deposits can be used to understand both the depositional environment (i.e. fumarole vs. sinter) and/or diagenetic process. Initial work has shown that, in the case of opaline silica, there are differences in spectral shape that may be related to surface textural features imparted during formation or post-depositional alteration. Due to the increasing importance of understanding microcrystalline deposits on Mars, here, we study the effects of crystal size and surface roughness on thermal infrared emission spectra of micro- and macro-crystalline quartz. The spectra of chert and macro-crystalline quartz have significant differences in both spectral contrast, and in the rounded doublet between ~1000-1250 cm-1, which can shift and appear less rounded in microcrystalline samples. We find that microcrystalline minerals exhibit naturally rough surfaces compared to their macrocrystalline counterparts at the 10 micron scale; and that this roughness causes distinct spectral differences within the Reststrahlen bands. We find that surface roughness, if rough on the scale of the wavelengths where the wavelength-dependent absorption coefficient (k) is large, can cause not only decreased spectral contrast, but also substantial changes in spectral shape. The spectral shape differences are small enough that the composition of the material is still recognizable, but large enough such that a roughness effect could be detected. We find that my studying the thermal infrared spectral character of the sample, it may be possible to make general inferences about microcrystallinity, and thus aid in the potential reconstruction of sedimentary rock diagenesis.

  1. Carbothermal synthesis of silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Janney, M.A.; Wei, G.C.; Kennedy, C.R.; Harris, L.A.

    1985-05-01

    Silicon carbide powders were synthesized from various silica and carbon sources by a carbothermal reduction process at temperatures between 1500 and 1600/sup 0/C. The silica sources were fumed silica, methyltrimethoxysilane, and microcrystalline quartz. The carbon sources were petroleum pitch, phenolic resin, sucrose, and carbon black. Submicron SiC powders were synthesized. Their morphologies included equiaxed loosely-bound agglomerates, equiaxed hard-shell agglomerates, and whiskers. Morphology changed with the furnace atmosphere (argon, nitrogen, or nitrogen-4% hydrogen). The best sintering was observed in SiC derived from the fumed-silica-pitch and fumed-silica-sucrose precursors. The poorest sintering was observed in SiC derived from microcrystalline quartz and carbon black. 11 refs., 16 figs., 10 tabs.

  2. Selective Dry Etch for Defining Ohmic Contacts for High Performance ZnO TFTs

    Science.gov (United States)

    2014-03-27

    junction transistor CD critical dimension CVD chemical vapor deposition d.u. dimensionless unit DC direct current DI deionized water DRIE deep reactive...QuickLot process, the PR was exposed for 1.9 seconds on the MA6 mask aligner (10mW/cm2, λ = 365-405 nm), developed with 1:5 ratio of 351 and deionized water ...Platinum Si Silicon SiH4 Silane SiO2 Silicon dioxide Ta Tantalum Ti Titanium TiW Titanium tungsten alloy (10:90) W Tungsten ZnO Zinc oxide 76

  3. Non-wood Fibre Production of Microcrystalline Cellulose from Sorghum caudatum: Characterisation and Tableting Properties

    OpenAIRE

    Ohwoavworhua, F. O.; Adelakun, T. A.

    2010-01-01

    The microcrystalline cellulose is an important ingredient in pharmaceutical, food, cosmetic and other industries. In this study, the microcrystalline cellulose, obtained from the stalk of Sorghum caudatum was evaluated for its physical and tableting characteristics with a view to assessing its usefulness in pharmaceutical tableting. The microcrystalline cellulose, obtained from the stalk of Sorghum caudatum, obtained by sodium hydroxide delignification followed by sodium hypochlorite bleachin...

  4. rf excited optical emission spectrum of radicals generated during hot wire chemical vapour deposition for the preparation of microcrystalline silicon thin film%射频激发热丝化学气相沉积制备硅薄膜过程中光发射谱的研究

    Institute of Scientific and Technical Information of China (English)

    李天微; 刘丰珍; 朱美芳

    2011-01-01

    To study the radicals behavior in the hot wire chemical vapour deposition (HWCVD) process for the preparation of microcrystalline Si (μc-Si: H) thin film, a weak radio frequency (rf) power was introduced to excite the radicals generated in HWCVD chamber. The spectrum of fi-excited HWCVD (rf-HWCVD) was obtained by subtracting the emission of hot wires from the spectrum measured by OES. The influence of the rf power on the rf-HWCVD spectrum can be neglected as the rf power density was less than 0. 1 W/cm2. Under the same deposition parameters, the emission spectra for rf-HWCVD and plasma enhanced CVD (PECVD) processes are different. Under the low deposition pressure ( 7.5 Pa), the intensities of Sill * and Hα vary with the hot wire temperature reversely, which is characteristic of HWCVD with high gas dissociation rate and high concentration of atomic H. The ratio of intensity of Hα to Sill * in the emission spectrum of rf-HWCVD varying with deposition pressure is consistent with the crystalline fraction of μc-Si: H film. The results indicate that the optical emission spectroscopy measurement is a suitable method for the investigation of the HWCVD process excited by a weak rf-power.%采用射频(rf)激发,在热丝化学气相沉积(HWCVD)制备微晶硅薄膜的过程中产生发光基元,测量了rf激发HWCVD(rf-HWCVD)的光发射谱,比较了相同工艺条件下rf-HWCVD和等离子体增强CVD(PECVD)的光发射谱,分析了rf功率、热丝温度和沉积气压对rf-HWCVD光发射谱的影响.结果表明,在射频功率<0.1W/cm1时,rf-HWCVD发射光谱反映了HWCVD高的气体分解效率和高浓度原子氢的特点,能够解释气压变化与微晶硅薄膜微结构的关系,是研究HWCVD气相过程的有效方法之一.

  5. Amorphous-to-microcrystalline transition in a-Si:H under hydrogen plasma: Optical and electrical detection

    Energy Technology Data Exchange (ETDEWEB)

    Hadjadj, Aomar; Larbi, Fadila [Groupe de Recherche en Sciences pour l' Ingenieur (GRESPI), Universite de Reims, 51687 Reims cedex 2 (France); Pham, Nans [Groupe de Recherche en Sciences pour l' Ingenieur (GRESPI), Universite de Reims, 51687 Reims cedex 2 (France); Laboratoire de Physique des Interfaces et Couches Minces (LPICM), Ecole Polytechnique, 91128 Palaiseau (France); Roca i Cabarrocas, Pere [Laboratoire de Physique des Interfaces et Couches Minces (LPICM), Ecole Polytechnique, 91128 Palaiseau (France)

    2012-06-15

    The exact role of hydrogen in the crystallization process is still a subject of broad controversies due to the complexity of the overall plasma enhanced chemical vapor deposition (PECVD) process. We have investigated by ellipsometry the amorphous-to-microcrystalline the phase transition in intrinsic and doped hydrogenated amorphous silicon (a-Si:H) thin films during their exposure to a hydrogen plasma in conditions of chemical transport. The whole ellipsometry diagnostics reveal that, while intrinsic and phosphorus-doped a-Si:H present a similar trend during the plasma treatment, boron-doped a-Si:H differs by special features such as a rapid formation of the hydrogen-rich subsurface layer and an early amorphous-to-microcrystalline phase transition. The particular behavior of boron-doped material is also pointed out through the time-evolution of the self-bias voltage on the radio-frequency electrode during the hydrogen plasma treatment (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Effect of gate dielectrics on the performance of p-type Cu2O TFTs processed at room temperature

    KAUST Repository

    Al-Jawhari, Hala A.

    2013-12-01

    Single-phase Cu2O films with p-type semiconducting properties were successfully deposited by reactive DC magnetron sputtering at room temperature followed by post annealing process at 200°C. Subsequently, such films were used to fabricate bottom gate p-channel Cu2O thin film transistors (TFTs). The effect of using high-κ SrTiO3 (STO) as a gate dielectric on the Cu2O TFT performance was investigated. The results were then compared to our baseline process which uses a 220 nm aluminum titanium oxide (ATO) dielectric deposited on a glass substrate coated with a 200 nm indium tin oxide (ITO) gate electrode. We found that with a 150 nm thick STO, the Cu2O TFTs exhibited a p-type behavior with a field-effect mobility of 0.54 cm2.V-1.s-1, an on/off ratio of around 44, threshold voltage equaling -0.62 V and a sub threshold swing of 1.64 V/dec. These values were obtained at a low operating voltage of -2V. The advantages of using STO as a gate dielectric relative to ATO are discussed. © (2014) Trans Tech Publications, Switzerland.

  7. Effect of indium low doping in ZnO based TFTs on electrical parameters and bias stress stability

    Energy Technology Data Exchange (ETDEWEB)

    Cheremisin, Alexander B., E-mail: acher612@gmail.com; Kuznetsov, Sergey N.; Stefanovich, Genrikh B. [Physico-Technical Department, Petrozavodsk State University, Petrozavodsk 185910 (Russian Federation)

    2015-11-15

    Some applications of thin film transistors (TFTs) need the bottom-gate architecture and unpassivated channel backside. We propose a simple routine to fabricate indium doped ZnO-based TFT with satisfactory characteristics and acceptable stability against a bias stress in ambient room air. To this end, a channel layer of 15 nm in thickness was deposited on cold substrate by DC reactive magnetron co-sputtering of metal Zn-In target. It is demonstrated that the increase of In concentration in ZnO matrix up to 5% leads to negative threshold voltage (V{sub T}) shift and an increase of field effect mobility (μ) and a decrease of subthreshold swing (SS). When dopant concentration reaches the upper level of 5% the best TFT parameters are achieved such as V{sub T} = 3.6 V, μ = 15.2 cm{sup 2}/V s, SS = 0.5 V/dec. The TFTs operate in enhancement mode exhibiting high turn on/turn off current ratio more than 10{sup 6}. It is shown that the oxidative post-fabrication annealing at 250{sup o}C in pure oxygen and next ageing in dry air for several hours provide highly stable operational characteristics under negative and positive bias stresses despite open channel backside. A possible cause of this effect is discussed.

  8. Effect of indium low doping in ZnO based TFTs on electrical parameters and bias stress stability

    Directory of Open Access Journals (Sweden)

    Alexander B. Cheremisin

    2015-11-01

    Full Text Available Some applications of thin film transistors (TFTs need the bottom-gate architecture and unpassivated channel backside. We propose a simple routine to fabricate indium doped ZnO-based TFT with satisfactory characteristics and acceptable stability against a bias stress in ambient room air. To this end, a channel layer of 15 nm in thickness was deposited on cold substrate by DC reactive magnetron co-sputtering of metal Zn-In target. It is demonstrated that the increase of In concentration in ZnO matrix up to 5% leads to negative threshold voltage (VT shift and an increase of field effect mobility (μ and a decrease of subthreshold swing (SS. When dopant concentration reaches the upper level of 5% the best TFT parameters are achieved such as VT = 3.6 V, μ = 15.2 cm2/V s, SS = 0.5 V/dec. The TFTs operate in enhancement mode exhibiting high turn on/turn off current ratio more than 106. It is shown that the oxidative post-fabrication annealing at 250oC in pure oxygen and next ageing in dry air for several hours provide highly stable operational characteristics under negative and positive bias stresses despite open channel backside. A possible cause of this effect is discussed.

  9. Technology and characterization of Thin-Film Transistors (TFTs) with a-IGZO semiconductor and high-k dielectric layer

    Science.gov (United States)

    Mroczyński, R.; Wachnicki, Ł.; Gierałtowska, S.

    2016-12-01

    In this work, we present the design of the technology and fabrication of TFTs with amorphous IGZO semiconductor and high-k gate dielectric layer in the form of hafnium oxide (HfOx). In the course of this work, the IGZO fabrication was optimized by means of Taguchi orthogonal tables approach in order to obtain an active semiconductor with reasonable high concentration of charge carriers, low roughness and relatively high mobility. The obtained Thin-Film Transistors can be characterized by very good electrical parameters, i.e., the effective mobility (μeff ≍ 12.8 cm2V-1s-1) significantly higher than that for a-Si TFTs (μeff ≍ 1 cm2V-1s-1). However, the value of sub-threshold swing (i.e., 640 mV/dec) points that the interfacial properties of IGZO/HfOx stack is characterized by high value of interface states density (Dit) which, in turn, demands further optimization for future applications of the demonstrated TFT structures.

  10. Compactibility of agglomerated mixtures of calcium carbonate and microcrystalline cellulose.

    Science.gov (United States)

    Garzón Serra, María de Lourdes; Villafuerte Robles, Leopoldo

    2003-06-04

    The tablet tensile strength (T) of agglomerated mixtures of microcrystalline cellulose-Avicel PH 102 (MC), calcium carbonate (CC) and polyvinylpyrrolidone (Povidone, PVP), lubricated with magnesium stearate (MS), and formed under a compaction pressure (P(c)) ranging up to 618MPa has been determined. The compactibility was defined through: ln(-ln(1-T/T(max)))=Slope x lnP(c)+Intercept. MC/CC mixtures added of an agglutinant, before and after lubrication, show an important positive effect on their tablet tensile strength compared to a lineal relationship. This positive effect becomes smaller with decreasing compaction pressures. By different mixing methods, the higher the mixing efficiency the higher the compactibility, following the order: spray-dried>wet massing>tumble mixing. The compactibility of MC/CC/PVP spray-dried mixtures with calcium carbonate content from 20 to 60% was equal to or greater than that of pure microcrystalline cellulose. After lubrication with 2% MS the compactibility decreased, only the mixture with the maximal tablet tensile strength attained the tensile strength of pure microcrystalline cellulose. The presence of the binder, the lubricant and higher compaction pressures allow the accommodation of higher calcium carbonate proportions in the mixtures, at the maximal tablet tensile strength of the series. The lubricant decreases in a greater extent the compactibility of mixtures with a continuous phase of MC/PVP than that of CC/PVP. This is attributed to the plastic behavior of the MC/PVP continuous phase compared to a calcium carbonate continuous phase able to disrupt the Povidone and the possible lubricant coatings allowing a stronger interparticle interaction.

  11. Characterization of microcrystalline I-layer for solar cells prepared in low temperature - plastic compatible process

    KAUST Repository

    Sliz, Rafal

    2012-06-01

    Microcrystalline silicon (mc-Si) lms deposited using a Plasma Enhanced Chemical Vapour Deposition (PECVD) process constitute an important material for manufacturing low-cost, large-area thin-lm devices, such as solar cells or thin-lm transistors. Although the deposition of electronic-grade mc-Si using the PECVD process is now well established, the high substrate temperature required (~400°C) does not lend itself to electronic devices with exible form factors fabricated on low-cost plastic substrates. In this study, we rst investigated an intrinsic mc-Si layer deposited at plastic-compatible substrate temperatures (~150°C) by characterising the properties of the lm and then evaluated its applicability to p-i-n solar cells though device characterisation. When the performance of the solar cell was correlated with lm properties, it was found that, although it compared unfavourably with mc-Si deposited at higher temperatures, it remained a very promising option. Nonetheless, further development is required to increase the overall eciency of mc-Si exible solar cells.

  12. Iron Oxide Nanoparticles Employed as Seeds for the Induction of Microcrystalline Diamond Synthesis

    Directory of Open Access Journals (Sweden)

    Resto Oscar

    2008-01-01

    Full Text Available AbstractIron nanoparticles were employed to induce the synthesis of diamond on molybdenum, silicon, and quartz substrates. Diamond films were grown using conventional conditions for diamond synthesis by hot filament chemical vapor deposition, except that dispersed iron oxide nanoparticles replaced the seeding. X-ray diffraction, visible, and ultraviolet Raman Spectroscopy, energy-filtered transmission electron microscopy , electron energy-loss spectroscopy, and X-ray photoelectron spectroscopy (XPS were employed to study the carbon bonding nature of the films and to analyze the carbon clustering around the seed nanoparticles leading to diamond synthesis. The results indicate that iron oxide nanoparticles lose the O atoms, becoming thus active C traps that induce the formation of a dense region of trigonally and tetrahedrally bonded carbon around them with the ensuing precipitation of diamond-type bonds that develop into microcrystalline diamond films under chemical vapor deposition conditions. This approach to diamond induction can be combined with dip pen nanolithography for the selective deposition of diamond and diamond patterning while avoiding surface damage associated to diamond-seeding methods.

  13. Comparison of microcrystalline characterization results from oil palm midrib alpha cellulose using different delignization method

    Science.gov (United States)

    Yuliasmi, S.; Pardede, T. R.; Nerdy; Syahputra, H.

    2017-03-01

    Oil palm midrib is one of the waste generated by palm plants containing 34.89% cellulose. Cellulose has the potential to produce microcrystalline cellulose can be used as an excipient in tablet formulations by direct compression. Microcrystalline cellulose is the result of a controlled hydrolysis of alpha cellulose, so the alpha cellulose extraction process of oil palm midrib greatly affect the quality of the resulting microcrystalline cellulose. The purpose of this study was to compare the microcrystalline cellulose produced from alpha cellulose extracted from oil palm midrib by two different methods. Fisrt delignization method uses sodium hydroxide. Second method uses a mixture of nitric acid and sodium nitrite, and continued with sodium hydroxide and sodium sulfite. Microcrystalline cellulose obtained by both method was characterized separately, including organoleptic test, color reagents test, dissolution test, pH test and determination of functional groups by FTIR. The results was compared with microcrystalline cellulose which has been available on the market. The characterization results showed that microcrystalline cellulose obtained by first method has the most similar characteristics to the microcrystalline cellulose available in the market.

  14. Threshold-Voltage-Shift Compensation and Suppression Method Using Hydrogenated Amorphous Silicon Thin-Film Transistors for Large Active Matrix Organic Light-Emitting Diode Displays

    Science.gov (United States)

    Oh, Kyonghwan; Kwon, Oh-Kyong

    2012-03-01

    A threshold-voltage-shift compensation and suppression method for active matrix organic light-emitting diode (AMOLED) displays fabricated using a hydrogenated amorphous silicon thin-film transistor (TFT) backplane is proposed. The proposed method compensates for the threshold voltage variation of TFTs due to different threshold voltage shifts during emission time and extends the lifetime of the AMOLED panel. Measurement results show that the error range of emission current is from -1.1 to +1.7% when the threshold voltage of TFTs varies from 1.2 to 3.0 V.

  15. Some historical remarks on microcrystalline arthritis (gout and chondrocalcinosis

    Directory of Open Access Journals (Sweden)

    G. Pasero

    2012-01-01

    Full Text Available The history of microcrystalline arthritis only began in 1961 when Daniel McCarty and Joseph Lee Hollander demonstrated the presence of sodium monourate crystals in the synovial fluid of gouty patients. However, gout is a historical disease, thanks to the descriptions of Hippocrates, Caelius Aurelianus, Soranus of Ephesus and Araeteus of Cappadocia. The relationship between hyperuricemia and gout was first documented in the nineteenth century by Alfred Baring Garrod, who demonstrated deposits of uric acid crystals on a linen thread held dipped in acidified blood (the so-called “thread method”. Gout has always been considered a prerogative of the moneyed classes (arthritis divitum, and history is full of famous gouty personalities, including kings, emperors, popes, commanders, politicians, artists, writers, philosophers and scientists. Another form of microcrystalline arthritis, chondrocalcinosis, was identified as being a rheumatic disorder different from gout in the 1960s. As a specific clinical entity, it was first identified in 1958 by Dušan Žitnˇan and Štefan Sit’aj in a few Slovak families.

  16. Characterization of Epoxy Composites Reinforced with Wax Encapsulated Microcrystalline Cellulose

    Directory of Open Access Journals (Sweden)

    Yuanfeng Pan

    2016-11-01

    Full Text Available The effect of paraffin wax encapsulated microcrystalline cellulose (EMC particles on the mechanical and physical properties of EMC/epoxy composites were investigated. It was demonstrated that the compatibility between cellulose and epoxy resin could be maintained due to partial encapsulation resulting in an improvement in epoxy composite mechanical properties. This work was unique because it was possible to improve the physical and mechanical properties of the EMC/epoxy composites while encapsulating the microcrystalline cellulose (MCC for a more homogeneous dispersion. The addition of EMC could increase the stiffness of epoxy composites, especially when the composites were wet. The 1% EMC loading with a 1:2 ratio of wax:MCC demonstrated the best reinforcement for both dry and wet properties. The decomposition temperature of epoxy was preserved up to a 5% EMC loading and for different wax:MCC ratios. An increase in wax encapsulated cellulose loading did increase water absorption but overall this absorption was still low (<1% for all composites.

  17. Scientific Opinion on the re-evaluation of microcrystalline wax (E 905 as a food additive

    Directory of Open Access Journals (Sweden)

    EFSA Panel on Food Additives and Nutrient Sources added to Food (ANS

    2013-04-01

    Full Text Available Following a request from the European Commission, the Panel on Food Additives and Nutrient Sources added to Food (ANS was asked to deliver a scientific opinion on microcrystalline wax (E 905 when used as a food additive. Microcrystalline wax (E 905 is authorised quantum satis as a surface treatment agent on non-chocolate confectionery, chewing gum and decorations, coatings and fillings, except fruit based fillings. It is also permitted as a surface treatment of melons, papaya, mango and avocado. The substance was evaluated by the Scientific Committee on Food (SCF in 1990 and 1995 and by the Joint FAO/WHO Expert Committee on Food Additives (JECFA, the latest in 1995. The JECFA established a group ADI of 20 mg/kg bw/day for mineral oils, paraffins and microcrystalline waxes. The Panel noted that all mineral oil products accumulated in tissues in a dose- and time-dependent manner with the exception of microcrystalline waxes. The Panel concluded that there is no concern for genotoxicity from microcrystalline wax (E 905. The Panel also considered that the available toxicity studies with mineral hydrocarbons, closely related from a chemical point of view with microcrystalline waxes, consistently reported no effects of concern associated with the intake of microcrystalline wax. The Panel further concluded that since no long-term toxicity and carcinogenicity studies with microcrystalline wax E 905 were available, no ADI could be established. The Panel also concluded that the conservative exposure estimates to microcrystalline wax (E 905 from its use at maximum permitted level (following quantum satis rules, resulted in a sufficient margin of safety compared to the NOAEL established by the Panel for the closely related high viscosity mineral oils, and therefore the use microcrystalline wax (E 905 as a food additive with the currently authorised uses would not be of safety concern.

  18. The magnetic properties of powdered and compacted microcrystalline permalloy

    Science.gov (United States)

    Kollár, P.; Olekšáková, D.; Füzer, J.; Kováč, J.; Roth, S.; Polański, K.

    2007-03-01

    The aim of this work is to investigate the magnetic properties of powdered and compacted microcrystalline Ni-Fe (81 wt% of Ni) permalloy. It was found by investigating the influence of mechanical milling on the magnetic properties of powder samples prepared by milling of the ribbon that the alloy remains a solid solution with stable structure during the whole milling process. With decreasing particle size the rotation of magnetization vector gradually becomes dominant magnetization process and thus coercivity increases. After compaction of the powder by uniaxial hot pressing the magnetic contact between powder particles is recreated and for resulting bulk the displacement of the domain walls becomes dominant magnetization process with coercivity of 11 A/m (comparable with the coercivity of conventional permalloy).

  19. Dielectric barrier discharge plasma pretreatment on hydrolysis of microcrystalline cellulose

    Science.gov (United States)

    Fangmin, HUANG; Zhouyang, LONG; Sa, LIU; Zhenglong, Qin

    2017-04-01

    Dielectric barrier discharge (DBD) plasma was used as a pretreatment method for downstream hydrolysis of microcrystalline cellulose (MCC). The degree of polymerization (DP) of MCC decreased after it was pretreated by DBD plasma under a carrier gas of air/argon. The effectiveness of depolymerization was found to be influenced by the crystallinity of MCC when under the pretreatment of DBD plasma. With the addition of tert-butyl alcohol in the treated MCC water suspension solution, depolymerization effectiveness of MCC was inhibited. When MCC was pretreated by DBD plasma for 30 min, the total reducing sugar concentration (TRSC) and liquefaction yield (LY) of pretreated-MCC (PMCC) increased by 82.98% and 34.18% respectively compared with those for raw MCC.

  20. Dielectric barrier discharge plasma pretreatment on hydrolysis of microcrystalline cellulose

    Science.gov (United States)

    Huang, Fangmin; Long, Zhouyang; Liu, Sa; Qin, Zhenglong

    2017-04-01

    Dielectric barrier discharge (DBD) plasma was used as a pretreatment method for downstream hydrolysis of microcrystalline cellulose (MCC). The degree of polymerization (DP) of MCC decreased after it was pretreated by DBD plasma under a carrier gas of air/argon. The effectiveness of depolymerization was found to be influenced by the crystallinity of MCC when under the pretreatment of DBD plasma. With the addition of tert-butyl alcohol in the treated MCC water suspension solution, depolymerization effectiveness of MCC was inhibited. When MCC was pretreated by DBD plasma for 30 min, the total reducing sugar concentration (TRSC) and liquefaction yield (LY) of pretreated-MCC (PMCC) increased by 82.98% and 34.18% respectively compared with those for raw MCC.

  1. Percutaneous microcrystalline chitosan application for sealing arterial puncture sites.

    Science.gov (United States)

    Hoekstra, A; Struszczyk, H; Kivekäs, O

    1998-08-01

    Arterial catheterization is one of the most frequently performed inpatient diagnostic and therapeutic procedures in the development countries. Complications may occur after any catheterization from inadequate hemostasis, particularly in the setting of aggressive anticoagulation. This study suggests that microcrystalline chitosan (MCCh) sealant installation via an arterial sheath at the completion of catheterization may improve hemostasis. Results using MCCh in eight heparinized dogs documented significant reductions in manual compression time (P = 0.016) of the artery after withdrawal of both the sheath introducer and catheter. Comparative results were found in rats, wherein a created wound in the aorta could be sealed relatively quickly and easily. The biodegradability, optimalization, and a better pharmaceutical formulation of this potential hemostatic agent require further studies.

  2. Silicon induced stability and mobility of indium zinc oxide based bilayer thin film transistors

    Science.gov (United States)

    Chauhan, Ram Narayan; Tiwari, Nidhi; Liu, Po-Tsun; Shieh, Han-Ping D.; Kumar, Jitendra

    2016-11-01

    Indium zinc oxide (IZO), silicon containing IZO, and IZO/IZO:Si bilayer thin films have been prepared by dual radio frequency magnetron sputtering on glass and SiO2/Si substrates for studying their chemical compositions and electrical characteristics in order to ascertain reliability for thin film transistor (TFT) applications. An attempt is therefore made here to fabricate single IZO and IZO/IZO:Si bilayer TFTs to study the effect of film thickness, silicon incorporation, and bilayer active channel on device performance and negative bias illumination stress (NBIS) stability. TFTs with increasing single active IZO layer thickness exhibit decrease in carrier mobility but steady improvement in NBIS; the best values being μFE ˜ 27.0, 22.0 cm2/Vs and ΔVth ˜ -13.00, -6.75 V for a channel thickness of 7 and 27 nm, respectively. While silicon incorporation is shown to reduce the mobility somewhat, it raises the stability markedly (ΔVth ˜ -1.20 V). Further, IZO (7 nm)/IZO:Si (27 nm) bilayer based TFTs display useful characteristics (field effect mobility, μFE = 15.3 cm2/Vs and NBIS value, ΔVth =-0.75 V) for their application in transparent electronics.

  3. Optoelectronic properties of hot-wire silicon layers deposited at 100 °C

    NARCIS (Netherlands)

    Brinza, M.; van der Werf, C.H.M.; Rath, J.K.; Schropp, R.E.I.

    2008-01-01

    Hot-wire chemical vapor deposition is employed for the deposition of amorphous and microcrystalline silicon layers at substrate temperature kept below 100 °C with the aid of active cooling of the substrate holder. The hydrogen dilution is varied in order to investigate films at the amorphous-to-micr

  4. Microcrystalline sodium tungsten bronze nanowire bundles as efficient visible light-responsive photocatalysts.

    Science.gov (United States)

    Wang, Lei; Zhan, Jinhua; Fan, Weiliu; Cui, Guanwei; Sun, Honggang; Zhuo, Linhai; Zhao, Xian; Tang, Bo

    2010-12-14

    Microcrystalline sodium tungsten bronze nanowire bundles were obtained via a facile hydrothermal synthesis, and were applied in water purification as visible-light-driven photocatalysts for the first time.

  5. Physicotechnical, spectroscopic and thermogravimetric properties of powdered cellulose and microcrystalline cellulose derived from groundnut shells

    OpenAIRE

    Chukwuemeka P. Azubuike; Jimson O. Odulaja; Augustine O Okhamafe

    2012-01-01

    α-Cellulose and microcrystalline cellulose powders, derived from agricultural waste products, that have for thepharmaceutical industry, desirable physical (flow) properties were investigated. α–Cellulose (GCN) wasextracted from groundnut shell (an agricultural waste product) using a non-dissolving method based oninorganic reagents. Modification of this α -cellulose was carried out by partially hydrolysing it with 2Nhydrochloric acid under reflux to obtain microcrystalline cellulose (MCGN). Th...

  6. Effect of patterning on the performance of p-type Cu2O TFTs: a 3D simulation using COMSOL multiphysics

    Science.gov (United States)

    Alsharif, Sarah; Farhan, Hanaa; Al-Jawhari, Hala

    2017-01-01

    A 3D model for p-type Cu2O thin-film transistor (TFT) was simulated for the first time using COMSOL Multiphysics. The main objective of this modeling is to investigate the effect of patterning either the channel or the gate on the performance of Cu2O TFTs. Considering the ideal case, where traps and leakage current are not incorporated, we compared the performance of three different designs; unpatterned, patterned channel and patterned channel and gate TFTs. In each case, the transfer curve, output characteristics, current flow and potential distribution were clarified. The comparison between main parameters showed that the unpatterned model overestimated the field effect mobility µFE by 37.4% over the fully patterned TFT, nevertheless, the latter exhibited the highest on/off current ratio and the lowest off-current. A simulation of experimental output characteristics reported for Cu2O TFT was performed to check the model viability.

  7. Highly Robust Neutral Plane Oxide TFTs Withstanding 0.25 mm Bending Radius for Stretchable Electronics

    Science.gov (United States)

    Kim, Yong-Hwan; Lee, Eunji; Um, Jae Gwang; Mativenga, Mallory; Jang, Jin

    2016-05-01

    Advancements in thin-film transistor (TFT) technology have extended to electronics that can withstand extreme bending or even folding. Although the use of ultrathin plastic substrates has achieved considerable advancement towards this end, free-standing ultrathin plastics inevitably suffer from mechanical instability and are very difficult to handle during TFT fabrication. Here, in addition to the use of a 1.5 μm-thick polyimide (PI) substrate, a 1.5 μm-thick PI film is also deposited on top of the TFT devices to ensure that the devices are located at the neutral plane of the two PI films for high folding stability. For mechanical support during TFT fabrication up to the deposition of the top PI film, the PI substrate is spin coated on top of a carrier glass that is coated with a mixture of carbon nanotubes (CNTs) and graphene oxide (GO). The mixture of CNT and GO facilitates mechanical detachment of the neutral plane (NP) TFTs from the carrier glass before they are transferred to a polydimethylsiloxane (PDMS) substrate as islands. Being located in the neutral bending plane, the NP TFT can be transferred to the PDMS without performance degradation and exhibit excellent mechanical stability after stretching the PDMS substrate up to a 25% elastic elongation.

  8. Microcrystalline Cellulose from Plant Wastes through Sodium Hydroxide-Anthraquinone-Ethanol Pulping

    Directory of Open Access Journals (Sweden)

    Olugbenga Oludayo Oluwasina

    2014-08-01

    Full Text Available Microcrystalline cellulose was prepared from wastes of Tithonia diversifolia, inflorescence stems of Musa sapientum, and Musa paradisiaca by soda-anthraquinone–ethanol pulping method. They were bleached by sodium chlorite and then alpha-cellulose was isolated, followed by preparation of microcrystalline cellulose. The study revealed the effect of various processing stages on the properties of the cellulose obtained. Yields of more than 80% of microcrystalline cellulose were obtained. Fourier transform infrared (FTIR and solid state 13C Nuclear magnetic resonance (13C NMR confirmed the presence of the major expected peaks in microcrystalline cellulose. Scanning electron microscopy (SEM revealed that Musa species had short fiber length and mixtures of non-aggregated spherical, rod-shaped and thread like microcrystalline cellulose, but Tithonia diversifolia had aggregate crystal packed formation. The results compared well with those of other authors and were able to meet most of the requirements specified in British Pharmacopoeia. The study revealed that a drug excipient like microcrystalline cellulose that could protect thermo-labile active ingredients could be successfully obtained from abundant non-woody agricultural wastes.

  9. High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits.

    Science.gov (United States)

    Wu, Tsung-Ta; Huang, Wen-Hsien; Yang, Chih-Chao; Chen, Hung-Chun; Hsieh, Tung-Ying; Lin, Wei-Sheng; Kao, Ming-Hsuan; Chen, Chiu-Hao; Yao, Jie-Yi; Jian, Yi-Ling; Hsu, Chiung-Chih; Lin, Kun-Lin; Shen, Chang-Hong; Chueh, Yu-Lun; Shieh, Jia-Min

    2017-05-02

    Development of manufacture trend for TFTs technologies has focused on improving electrical properties of films with the cost reduction to achieve commercialization. To achieve this goal, high-performance sub-50 nm TFTs-based MOSFETs with ON-current (Ion)/subthreshold swing (S.S.) of 181 µA/µm/107 mV/dec and 188 µA/µm/98 mV/dec for NMOSFETs and PMOSFETs in a monolithic 3D circuit were demonstrated by a low power with low thermal budget process. In addition, a stackable static random access memory (SRAM) integrated with TFTs-based MOSFET with static noise margins (SNM) equals to 390 mV at VDD = 1.0 V was demonstrated. Overall processes include a low thermal budget via ultra-flat and ultra-thin poly-Si channels by solid state laser crystallization process, chemical-mechanical polishing (CMP) planarization, plasma-enhanced atomic layer deposition (ALD) gate stacking layers and infrared laser activation with a low thermal budget. Detailed material and electrical properties were investigated. The advanced 3D architecture with closely spaced inter-layer dielectrics (ILD) enables high-performance stackable MOSFETs and SRAM for power-saving IoT/mobile products at a low cost or flexible substrate.

  10. Phloxine B as a Probe for Entrapment in Microcrystalline Cellulose

    Directory of Open Access Journals (Sweden)

    Enrique San Román

    2012-02-01

    Full Text Available The photophysical behaviour of phloxine B adsorbed onto microcrystalline cellulose was evaluated by reflectance spectroscopy and laser induced time-resolved luminescence in the picosecond-nanosecond and microsecond-millisecond ranges. Analysis of the absorption spectral changes with concentration points to a small tendency of the dye to aggregate in the range of concentrations under study. Prompt fluorescence, phosphorescence and delayed fluorescence spectral decays were measured at room temperature and 77 K, without the need of sample degassing because cellulose protects triplet states from oxygen quenching. In all cases, spectral changes with time and lifetime distribution analysis were consistent with the dye coexisting in two different environments: dyes tightly entrapped between polymer chains in crystalline regions of cellulose showed longer fluorescence and phosphorescence lifetimes and more energetic triplet states, while dyes adsorbed in more amorphous regions of the support showed shorter lifetimes and less energetic triplet states. This behaviour is discussed in terms of the different dye-support interactions in both kinds of adsorption sites.

  11. Non-wood fibre production of microcrystalline cellulose from Sorghum caudatum: Characterisation and tableting properties

    OpenAIRE

    Ohwoavworhua F; Adelakun T

    2010-01-01

    The microcrystalline cellulose is an important ingredient in pharmaceutical, food, cosmetic and other industries. In this study, the microcrystalline cellulose, obtained from the stalk of Sorghum caudatum was evaluated for its physical and tableting characteristics with a view to assessing its usefulness in pharmaceutical tableting. The microcrystalline cellulose, obtained from the stalk of Sorghum caudatum, obtained by sodium hydroxide delignification followed by sodium hypochlorite bleachin...

  12. Quality Evaluation for Microcrystalline Silicon Thin-Film Solar Cells by Single-Layer Absorption

    Directory of Open Access Journals (Sweden)

    Sheng-Hui Chen

    2012-01-01

    Full Text Available The absorption coefficient at 1.4 eV is divided by the value at 0.9 eV to obtain the factor used to judge the quality of μc-Si:H. PV device performance can be predicted by multiplying Voc with Isc when using this layer as an intrinsic layer. The results show a good relationship between the quality factor and the product of open-circuit voltage and short-circuit current. However, the final efficiency is influenced by the identities of the interface in the multilayer structure.

  13. Compactibility of mixtures of calcium carbonate and microcrystalline cellulose.

    Science.gov (United States)

    Garzón, M de Lourdes; Villafuerte, Leopoldo

    2002-01-01

    A patented coprocessed mixture of microcrystalline cellulose (MC) and calcium carbonate (CC) is claimed to perform, as a pharmaceutical excipient, equal or better than pure MC. To investigate it, the tensile strength (T) of tablets made of mixtures of MC type 102, CC, magnesium stearate (MS) and polyvinylpyrrolidone (PVP) and formed under a compaction pressure (P(c)) ranging up to 618 MPa has been determined. The compactibility of the mixtures was defined through regression parameters obtained with ln(-ln(1-T/T(max)))=slope x lnP(c) + intercept. MC/CC mixtures, P(c)=618 MPa, show a small decrease in tablet tensile strength with CC proportions up to about 20%, falling considerably thereafter. Lower compaction pressures, P(c)tablet tensile strength due to 2%-MS, P(c)=487 MPa, was recovered to 35% of its original value admixing about 25% CC. This maximal value of recovery showed a shift to lower proportions of CC, up to 10%, as compaction pressure decreased. This was attributed to lower CC-particles fragmentation or agglomerates spreading at lower compaction pressures. Mixtures with increased plasticity (MC/CC/PVP and MC/CC/PVP/MS) showed an increased compactibility, which was more evident at higher compaction pressures and higher CC proportions, presumably due to higher deformation and erosion of PVP particles. Inclusion of about 40% CC in a MC/PVP/MS mixture showed 60% recovery of the original MC tablet tensile strength. Lower MS proportions are expected to allow a higher recovery.

  14. Thin film silicon n–i–p solar cells deposited by VHF PECVD at 100 °C substrate temperature

    NARCIS (Netherlands)

    Brinza, M.; Rath, J.K.; Schropp, R.E.I.

    2009-01-01

    The applicability of the very high frequency (VHF) plasma-enhanced chemical vapor deposition (PECVD) technique to the fabrication of solar cells in an n–i–p configuration at 100 °C substrate temperature is being investigated. Amorphous and microcrystalline silicon cells are made with the absorber la

  15. Surface chemistry of the preferred (111) and (220) crystal oriented microcrystalline Si films by radio-frequency plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ohba, Daisuke; Koshino, Hideto; Tang, Zeguo; Shirai, Hajime [Graduate School of Science and Engineering, Saitama University, Sakura (Japan)

    2011-10-15

    The surface chemistry of the preferentially (111) and (220) crystal orientated chlorinated hydrogenated microcrystalline silicon ({mu}c-Si:H:Cl) films was studied using a rf PE-CVD of a dichlorosilane (SiH{sub 2}Cl{sub 2}) and H{sub 2} mixture. The growing surface for the preferentially (220) crystal oriented {mu}c-Si:H:Cl films included much voids and dangling bonds, whereas the growing surface with the preferential (111) crystal orientation was chemically stable relatively. These findings suggest that the sticking process of deposition precursors and/or the reconstruction of Si clusters within the sub-surface determine the preferential crystal orientation. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Influence of Boron doping on micro crystalline silicon growth

    Institute of Scientific and Technical Information of China (English)

    Li Xin-Li; Wang Guo; Chen Yong-Sheng; Yang Shi-E; Gu Jin-Hua; Lu Jing-Xiao; Gao Xiao-Yong; Li Rui; Jiao Yue-Chao; Gao Hai-Bo

    2011-01-01

    Microcrystalline silicon (Ftc-Si:H) thin films with and without boron doping are deposited using the radio-frequency plasmsrenhanced chemical vapour deposition method. The surface roughness evolutions of the silicon thin films are investigated using ex situ spectroscopic ellipsometry and an atomic force microscope. It is shown that the growth exponent β and the roughness exponent a are about 0.369 and 0.95 for the undoped thin film,respectively. Whereas,for the boron-doped pc-Si:H thin film,βincreases to 0.534 and a decreases to 0.46 due to the shadowing effect.

  17. The optoelectronic properties of silicon films deposited by inductively coupled plasma CVD

    Energy Technology Data Exchange (ETDEWEB)

    Qin Yanli; Yan Hengqing; Li Fei; Qiao Li; Liu Qiming [Department of Physics, Lanzhou University, Lanzhou 730000 (China); He Deyan, E-mail: hedy@lzu.edu.cn [Department of Physics, Lanzhou University, Lanzhou 730000 (China)

    2010-11-15

    Hydrogenated amorphous and microcrystalline silicon films were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) at low substrate temperatures using H{sub 2}-diluted SiH{sub 4} as a source gas. High-density plasma generated by inductively coupled excitation facilitates the crystallization of silicon films at low temperatures, and microcrystalline silicon films were obtained at the substrate temperature as low as 180 deg. C. The columnar structure of the films becomes more and more compact with an increase of their crystallinity. The reduction of hydrogen content in the films causes a narrowing of the optical bandgap and an enhancement of the absorption with increasing the substrate temperature. The microcrystalline silicon films show two electronic transport mechanisms: one is related to the density of state distribution in the temperature region near room temperature and the other is the variable range hopping between localized electronic states close to the Fermi level below 170 K. A reasonable explanation is presented for the dependence of the optoelectronic properties on the microstructure of the silicon films. The films prepared at a substrate temperature of 300 deg. C have highly crystalline and compact columnar structure, high optical absorption coefficient and electrical conductivity, and a low hydrogen content of 3.8%.

  18. Matrix mini-tablets based on starch/microcrystalline wax mixtures.

    Science.gov (United States)

    De Brabander, C; Vervaet, C; Fiermans, L; Remon, J P

    2000-04-20

    Matrix mini-tablets based on a combination of microcrystalline waxes and starch derivatives were prepared using ibuprofen as a model drug. The production of mini-tablets was preferred over the production of pellets, as up-scaling of the pelletisation process seemed problematic. Prior to tabletting, melt granulation in a hot stage screw extruder and milling were required. The in vitro drug release was varied using microcrystalline waxes with a different melting range, the slowest drug release being obtained with a formulation containing a microcrystalline wax with a melting range between 68 and 72 degrees C. Generally speaking increasing the wax concentration resulted in a slower drug release. In vitro drug release profiles were also modified using different starches and mixtures of starches. Increasing the ibuprofen concentration to 70% resulted in a faster drug release rate.

  19. Rapid thermal annealing of sputter-deposited ZnO:Al films for microcrystalline Si thin-film solar cells

    Directory of Open Access Journals (Sweden)

    Hanajiri T.

    2012-06-01

    Full Text Available Rapid thermal annealing of sputter-deposited ZnO and Al-doped ZnO (AZO films with and without an amorphous silicon (a-Si capping layer was investigated using a radio-frequency (rf argon thermal plasma jet of argon at atmospheric pressure. The resistivity of bare ZnO films on glass decreased from 108 to 104–105 Ω cm at maximum surface temperatures Tmaxs above 650 °C, whereas the resistivity increased from 10-4 to 10-3–10-2Ω cm for bare AZO films. On the other hand, the resistivity of AZO films with a 30-nm-thick a-Si capping layer remained below 10-4Ω cm, even after TPJ annealing at a Tmax of 825 °C. The film crystallization of both AZO and a-Si layers was promoted without the formation of an intermixing layer. Additionally, the crystallization of phosphorous- and boron-doped a-Si layers at the sample surface was promoted, compared to that of intrinsic a-Si under the identical plasma annealing conditions. The TPJ annealing of n+-a-Si/textured AZO was applied for single junction n-i-p microcrystalline Si thin-film solar cells.

  20. Preparation and Characterization of Microcrystalline Cellulose (MCC from Kenaf and Cotton Stem

    Directory of Open Access Journals (Sweden)

    Farshad Mirehki

    2013-11-01

    Full Text Available Cellulose, microcrystalline cellulose (MCC and nanofiber cellulose are the ones of materials which are being used recently as biodegradable filler and reinforcing agent for making composites. In this research, microcrystalline cellulose were prepared from kenaf and cotton bast by hydrochloric acid hydrolysis. The effects of hydrolysis condition on amount of crystallinity and crystal size of MCC were investigated by infrared spectroscopy (FT-IR, X-ray diffraction (XRD and scanning electron microscopy (SEM. Results have shown that in both samples increasing the acid ratio increased the crystallinity; however, the size of crystals did not change. SEM results have shown that after hydrolysis the size of sample particles was micro.

  1. A novel method of producing a microcrystalline beta-sitosterol suspension in oil

    DEFF Research Database (Denmark)

    Christiansen, Leena I; Rantanen, Jukka T; von Bonsdorff, Anna K

    2002-01-01

    This paper describes a novel method of producing a microcrystalline oral suspension containing beta-sitosterol in oil for the treatment of hypercholesterolaemia. beta-Sitosterol pseudopolymorphs with different water contents were crystallized from acetone and acetone-water solutions. Structural a...

  2. Optimisation of the composition and production of mannitol/microcrystalline cellulose tablets

    NARCIS (Netherlands)

    Westerhuis, J.A; de Haan, P; Zwinkels, J; Jansen, W.T; Coenegracht, P.M J; Lerk, C.F

    1996-01-01

    Mixtures of mannitol and microcrystalline cellulose (MCC) were investigated on a small-production scale by granulation in a high-shear mixer and compression into tablets. For both excipients only a few cases of incompatibilities with active ingredients are known. Tablets with only MCC as the filler

  3. Visible light activated TiO2/microcrystalline cellulose nanocatalyst to destroy organic contaminants in water.

    Science.gov (United States)

    Hybrid TiO2/microcrystalline cellulose (MC) nanophotocatalyst was prepared in situ by a facile and simple synthesis utilizing benign precursors such as MC and TiCl4. The as-prepared nanocomposite was characterized by XRD, XPS, BET surface area analyzer, UV–vis DRS and TGA. Surfac...

  4. Defect structure and mechanical stability of microcrystalline titanium produced by equal channel angular pressing

    Science.gov (United States)

    Betekhtin, V. I.; Kadomtsev, A. G.; Narykova, M. V.; Amosova, O. V.; Sklenicka, V.

    2017-01-01

    It is established that increases in nanoporosity and the proportion of high-angle grain boundaries in the process of equal-channel angular pressing are the main structural factors leading to reduction in mechanical stability (durability) of microcrystalline titanium during long-term tests under creeping conditions.

  5. Visible light activated TiO2/microcrystalline cellulose nanocatalyst to destroy organic contaminants in water.

    Science.gov (United States)

    Hybrid TiO2/microcrystalline cellulose (MC) nanophotocatalyst was prepared in situ by a facile and simple synthesis utilizing benign precursors such as MC and TiCl4. The as-prepared nanocomposite was characterized by XRD, XPS, BET surface area analyzer, UV–vis DRS and TGA. Surfac...

  6. A New Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuit for Active Matrix Organic Light Emitting Diode

    Science.gov (United States)

    Fan, Ching-Lin; Lin, Yi-Yan; Chang, Jyu-Yu; Sun, Bo-Jhang; Liu, Yan-Wei

    2010-06-01

    This study presents one novel compensation pixel design and driving method for active matrix organic light-emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage feed-back method and the simulation results are proposed and verified by SPICE simulator. The measurement and simulation of LTPS TFT characteristics demonstrate the good fitting result. The proposed circuit consists of four TFTs and two capacitors with an additional signal line. The error rates of OLED anode voltage variation are below 0.3% under the threshold voltage deviation of driving TFT (ΔVTH = ±0.33 V). The simulation results show that the pixel design can improve the display image non-uniformity by compensating the threshold voltage deviation of driving TFT and the degradation of OLED threshold voltage at the same time.

  7. Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Guy Beaucarne

    2007-01-01

    with plasma-enhanced chemical vapor deposition (PECVD. In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

  8. Thin film silicon modules: contributions to low cost industrial production

    Energy Technology Data Exchange (ETDEWEB)

    Shah, A. [Universite de Neuchatel, Neuchatel (Switzerland)

    2005-07-01

    This final report for the Swiss Federal Office of Energy (SFOE) discusses the research work done during the two-year period 2003-04 at the Thin-Film Solar Cell Laboratory of the Institute of Microtechnology (IMT) at the University of Neuchatel in Switzerland. The transition from fundamental research work to concrete industrialisation issues, and changes within the research staff are discussed. The main results of the work done are presented, including basic techniques for the production of p-i-n solar cells on glass, new technologies for the deposition of n-i-p cells on low-cost flexible substrates and the optimisation of zinc oxide deposition methods. The key role played by substrate chemistry and roughness in the nucleation and growth of micro-crystalline silicon layers is looked at and diagnostic tools for the analysis of micro-crystalline solar cells are discussed.

  9. Influence of texture modifications in silicon solar cells on absorption in the intrinsic layers

    Science.gov (United States)

    Ermes, M.; Bittkau, K.; Carius, R.

    2012-06-01

    The influence of the front texture of an etched transparent conductive oxide with crater-like structures of various sizes on the absorption of a thin amorphous silicon (a-Si:H) layer is investigated by rigorous optical simulations as part of two simplified systems: A simplified single junction device, using a perfect metal as back contact and a top cell of an amorphous/microcrystalline silicon tandem device, using a microcrystalline silicon halfspace adjacent to the amorphous layer. The texture is modified by stretching either in height or laterally and the average absorption in the a-Si:H layer is investigated relative to the original structure. We investigate the average absorption for each wavelength as well as the total absorption, weighted with an AM1.5g spectrum. Furthermore, the local absorption distribution inside the a-Si:H layer is examined to improve the understanding of local texture features and their influence on absorption and cell performance. For both modifications, an optimal point can be found to improve the absorption in the amorphous layer by up to 15% and 6% for a simplified single junction and tandem top cell, respectively. In case of the top cell of the simplified tandem device, it is found that additionally, the transmission into the microcrystalline silicon can be improved. Also, the local absorption distribution shows that there is an optimal size of the surface craters for all modifications, while steeper crater rims in general lead to higher absorption.

  10. Thin film polycrystalline silicon: Promise and problems in displays and solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Fonash, S.J. [Pennsylvania State Univ., University Park, PA (United States)

    1995-08-01

    Thin film polycrystalline Si (poly-Si) with its carrier mobilities, potentially good stability, low intragrain defect density, compatibility with silicon processing, and ease of doping activation is an interesting material for {open_quotes}macroelectronics{close_quotes} applications such as TFTs for displays and solar cells. The poly-Si films needed for these applications can be ultra-thin-in the 500{Angstrom} to 1000{Angstrom} thickness range for flat panel display TFTs and in the 4{mu}m to 10{mu}m thickness range for solar cells. Because the films needed for these microelectronics applications can be so thin, an effective approach to producing the films is that of crystallizing a-Si precursor material. Unlike cast materials, poly-Si films made this way can be produced using low temperature processing. Unlike deposited poly-Si films, these crystallized poly-Si films can have grain widths that are much larger than the film thickness and almost atomically smooth surfaces. This thin film poly-Si crystallized from a-Si precursor films, and its promise and problems for TFTs and solar cells, is the focus of this discussion.

  11. Significant light absorption enhancement in silicon thin film tandem solar cells with metallic nanoparticles.

    Science.gov (United States)

    Cai, Boyuan; Li, Xiangping; Zhang, Yinan; Jia, Baohua

    2016-05-13

    Enhancing the light absorption in microcrystalline silicon bottom cell of a silicon-based tandem solar cell for photocurrent matching holds the key to achieving the overall solar cell performance breakthroughs. Here, we present a concept for significantly improving the absorption of both subcells simultaneously by simply applying tailored metallic nanoparticles both on the top and at the rear surfaces of the solar cells. Significant light absorption enhancement as large as 56% has been achieved in the bottom subcells. More importantly the thickness of the microcrystalline layer can be reduced by 57% without compromising the optical performance of the tandem solar cell, providing a cost-effective strategy for high performance tandem solar cells.

  12. Metal induced crystallization of silicon germanium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gjukic, M.

    2007-05-15

    In the framework of this thesis the applicability of the aluminium-induced layer exchange on binary silicon germanium alloys was studied. It is here for the first time shown that polycrstalline silicon-germanium layers can be fabricated over the whole composition range by the aluminium-induced layer exchange. The experimental results prove thet the resulting material exhibits a polycrystalline character with typocal grain sizes of 10-100 {mu}m. Raman measurements confirm that the structural properties of the resulting layers are because of the large crystallites more comparable with monocrystalline than with nano- or microcrystalline silicon-germanium. The alloy ratio of the polycrystalline layer correspondes to the chemical composition of the amorphous starting layer. The polycrystalline silicon-germanium layers possess in the range of the interband transitions a reflection spectrum, as it is otherwise only known from monocrystalline reference layers. The improvement of the absorption in the photovoltaically relevant spectral range aimed by the application of silicon-germanium could be also proved by absorption measurments. Strongly correlated with the structural properties of the polycrystalline layers and the electronic band structure resulting from this are beside the optical properties also the electrical properties of the material, especially the charge-carrier mobility and the doping concentration. For binary silicon-germanium layers the hole concentration of about 2 x 10{sup 18} cm{sup -3} for pure silicon increrases to about 5 x 10{sup 20} cm{sub -3} for pure germanium. Temperature-resolved measurements were applied in order to detect doping levels respectively semiconductor-metal transitions. In the last part of the thesis the hydrogen passivation of polycrystalline thin silicon-germanium layers, which were fabricated by means of aluminium-induced layer exchange, is treated.

  13. Development of open air silicon deposition technology by silane-free atmospheric pressure plasma enhanced chemical transport under local ambient gas control

    Science.gov (United States)

    Naito, Teruki; Konno, Nobuaki; Yoshida, Yukihisa

    2016-07-01

    Open air silicon deposition was performed by combining silane-free atmospheric pressure plasma-enhanced chemical transport and a newly developed local ambient gas control technology. The effect of air contamination on silicon deposition was investigated using a vacuum chamber, and the allowable air contamination level was confirmed to be 3 ppm. The capability of the local ambient gas control head was investigated numerically and experimentally. A safe and clean process environment with air contamination less than 1 ppm was achieved. Combining these technologies, a microcrystalline silicon film was deposited in open air, the properties of which were comparable to those of silicon films deposited in a vacuum chamber.

  14. Supramolecular elucidation of the quality attributes of microcrystalline cellulose and isomalt composite pellet cores.

    Science.gov (United States)

    Antal, István; Kállai, Nikolett; Luhn, Oliver; Bernard, Jörg; Nagy, Zsombor Kristóf; Szabó, Barnabás; Klebovich, Imre; Zelkó, Romána

    2013-10-01

    The major objective of this study was to disclose the relationships between the physical quality attributes and supramolecular structure of novel composite pellet cores containing microcrystalline cellulose (MCC) and isomalt in different ratios. The novel composite pellet cores were manufactured by an extrusion/spheronisation process. The micro or supramolecular structure of pellets was tracked by positron annihilation lifetime spectroscopy (PALS) based on the o-Ps lifetime values. The results indicate a correlation between the examined macro and microstructural properties of the inert cores. The higher free volume holes indicated by the higher o-Ps lifetime values resulted in a more mobile micro- and supramolecular structure of MCC cores thus increasing the plastic deformation and the tensile strength of the cores. A physical interaction was found between the microcrystalline cellulose and isomalt which supports the osmotic effect of the water soluble sugar alcohol in the composite pellet cores regarding drug release.

  15. Microwave assisted conversion of microcrystalline cellulose into value added chemicals using dilute acid catalyst.

    Science.gov (United States)

    Ching, Teck Wei; Haritos, Victoria; Tanksale, Akshat

    2017-02-10

    One of the grand challenges of this century is to transition fuels and chemicals production derived from fossil feedstocks to renewable feedstocks such as cellulosic biomass. Here we describe fast microwave conversion of microcrystalline cellulose (MCC) in water, with dilute acid catalyst to produce valuable platform chemicals. Single 10min microwave assisted treatment was able to convert >60% of MCC, with >50mol% yield of desirable products such as glucose, HMF, furfural and levulinic acid. Recycling of residual MCC with make-up fresh MCC resulted in an overall conversion of >93% after 5 cycles while maintaining >60% conversion in each cycle. Addition of isopropanol (70%v/v) as a co-solvent increased the yields of HMF and levulinic acid. This work shows for the first time proof of concept for complete conversion of recalcitrant microcrystalline cellulose in mild conditions of low temperature, dilute acid and short residence time using energy efficient microwave technology.

  16. Study on Preconcentration of Trace Copper Using Microcrystalline Triphenylmethane Loaded with Malachite Green

    Institute of Scientific and Technical Information of China (English)

    LIANG,Yong; ZHAO,Xiao-Hong; LI,Quan-Min; CUI,Feng-Ling; LIU,Guo-Guang

    2007-01-01

    The paper describes a noveI method for copper preconcentration using microcrystalline triphenylmethane loaded with malachite green prior to the determination by the flame atomic absorption spectrometry(FAAS).Under the optimum conditions,Cu(Ⅱ)can be totally adsorbed on the surface of microcrystalline triphenylmethane,and completely separated from Pb(Ⅱ),Cd(Ⅱ),Co(Ⅱ),Cr(Ⅲ),Ni(Ⅱ),Mn(Ⅱ),Fe(Ⅲ)and Al(Ⅲ)by controlling acidity.The preconcentration factor of this proposed method is 200.The recovery is in a range of 97.5%-105%.The relative standard deviation(RSD)is not beyond 3.0%.The proposed method has been successfully applied to the determination of trace copper in various water samples with satisfactory results.

  17. Evaluation of Drug Release From Coated Pellets Based on Isomalt, Sugar, and Microcrystalline Cellulose Inert Cores

    OpenAIRE

    2010-01-01

    The objective of the present study was to investigate the effect of the pellet core materials isomalt, sugar, and microcrystalline cellulose on the in vitro drug release kinetics of coated sustained-release pellets as well as to evaluate the influence of different ratios of polymethacrylate copolymers exhibiting different permeability characteristics on the drug release rate. For characterization of the drug release process of pellets, the effect of osmolality was studied using glucose as an ...

  18. FTIR spectroscopy and X-ray powder diffraction characterization of microcrystalline cellulose obtained from alfa fibers

    Directory of Open Access Journals (Sweden)

    Trache D.

    2013-07-01

    Full Text Available Many cereal straws have been used as raw materials for the preparation of microcrystalline cellulose (MCC. These raw materials were gradually replaced with wood products; nevertheless about 10% of the world overall pulp production is obtained from non-wood raw material. The main interest in pulp made from straw is that it provides excellent fibres for different industries with special properties, and that it is the major available source of fibrous raw material in some geographical areas. The aim of the present work was to characterize microcrystalline cellulose prepared from alfa fibers using the hydrolysis process. The products obtained are characterized with FTIR spectroscopy and X-ray powder diffraction. As a result, FTIR spectroscopy is an appropriate technique for studying changes occurred by any chemical treatment. The spectrum of alfa grass stems shows the presence of lignin and hemicelluloses. However, the cellulose spectrum indicates that the extraction of lignin and hemicellulose was effective. The X-ray analysis indicates that the microcrystalline cellulose is more crystalline than the source material.

  19. Influence of Water on the Structure and Dielectric Properties of the Microcrystalline and Nano-Cellulose

    Science.gov (United States)

    Kovalov, Kostiantyn M.; Alekseev, Olexander M.; Lazarenko, Maxim M.; Zabashta, Yu F.; Grabovskii, Yurii E.; Tkachov, Sergii Yu

    2017-07-01

    Influence of water in the different states on a structure and dielectric properties of microcrystalline cellulose were studied by of X-ray, thermogravimetry, and dielectric spectroscopy. At research of microcrystalline cellulose (MCC) with different content of water, it is shown that the molecules of water are located in the macropores of MCC and in multimolecular hydrated layers. It is shown that at the increase of concentration of water in a hydrated shell, the reorganization of molecules of cellulose in the surface of crystallites takes place, and as a result, their transversal size and crystallinity increase. It is shown that during the concentration of water, more than 13% in a continuous hydrated shell of crystallites appears. Temperature dependences of actual and imaginary parts of complex dielectric permittivity were studied in the interval of temperatures [-180 ÷ 120] °C on frequencies of f = 5, 10, 20, and 50 kHz. A low-temperature relaxation process and high-temperature transition were observed. Low-temperature relaxation process which is related to transition of surface methylol groups of molecules of cellulose conformation from tg to tt is shifted toward low temperatures at the increase of concentration of water in microcrystalline cellulose.

  20. Controllability of self-aligned four-terminal planar embedded metal double-gate low-temperature polycrystalline-silicon thin-film transistors on a glass substrate

    Science.gov (United States)

    Ohsawa, Hiroki; Sasaki, Shun; Hara, Akito

    2016-03-01

    Self-aligned four-terminal n-channel (n-ch) and p-channel (p-ch) planar embedded metal double-gate polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate at a low temperature of 550 °C. This device includes a metal top gate (TG) and a metal bottom gate (BG), which are used as the drive and control gates or vice versa. The BG was embedded in a glass substrate, and a poly-Si channel with large lateral grains was fabricated by continuous-wave laser lateral crystallization. The threshold voltage modulation factors under various control gate voltages (γ = ΔVth/ΔVCG) were nearly equal to the theoretical predictions in both the n- and p-ch TFTs. By exploiting this high controllability, an enhancement depletion (ED) inverter was fabricated, and successful operation at 2.0 V was confirmed.

  1. Driving Method for Compensating Reliability Problem of Hydrogenated Amorphous Silicon Thin Film Transistors and Image Sticking Phenomenon in Active Matrix Organic Light-Emitting Diode Displays

    Science.gov (United States)

    Shin, Min-Seok; Jo, Yun-Rae; Kwon, Oh-Kyong

    2011-03-01

    In this paper, we propose a driving method for compensating the electrical instability of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) and the luminance degradation of organic light-emitting diode (OLED) devices for large active matrix OLED (AMOLED) displays. The proposed driving method senses the electrical characteristics of a-Si:H TFTs and OLEDs using current integrators and compensates them by an external compensation method. Threshold voltage shift is controlled a using negative bias voltage. After applying the proposed driving method, the measured error of the maximum emission current ranges from -1.23 to +1.59 least significant bit (LSB) of a 10-bit gray scale under the threshold voltage shift ranging from -0.16 to 0.17 V.

  2. Novel co-processed excipients of mannitol and microcrystalline cellulose for preparing fast dissolving tablets of glipizide

    Directory of Open Access Journals (Sweden)

    Jacob S

    2007-01-01

    Full Text Available Co-processed particles of microcrystalline cellulose and mannitol were fabricated by spray drying technique to be used as a direct compression excipient in fast dissolving tablet formulation. Microcrystalline cellulose passed through sieve no.80, having a volumetric mean diameter (d 50 of 28.35 µm, was used to form composite particles with powdered mannitol which was previously passed through sieve no. 80, in various mixing ratios. The composite particles were evaluated for their powder and compression properties. An increase in the microcrystalline cellulose proportion imparted greater compressibility to the composite particles, but the flowability of these mixtures was decreased. Although microcrystalline cellulose and mannitol have been extensively used in the formulation of fast dissolving tablets, the non-wetting property of the hard compact central core may delay the disintegration time. Optimized co-processed formulation containing mannitol and microcrystalline cellulose in the ratio of 1.25:1 was found to have optimized powder and compressibility characteristics with fast disintegrating property (< 15 s. Photomicrographs have shown that the mannitol crystals are fine and uniformly distributed in the microcrystalline matrix in spray dried form compared to physical mixture of the same combination. The fast disintegration may be due to the partial amorphization and formation of submicron particles of mannitol. These results indicated that improved fast dissolving tablets could be prepared by the co-processed mixture of microcrystalline cellulose and mannitol. Finally fast dissolving tablets of glipizide were prepared by blending with other excipients and compressed into tablets. Sensory study on disintegration time and mouth feel attributes ranked the present formulation based on grittiness, chalkiness and overall preference as the best.

  3. Composition of macro- and microcrystalline paraffin waxes; Ueber die Zusammensetzung von makro- und mikrokristallinen Paraffinen

    Energy Technology Data Exchange (ETDEWEB)

    Matthaei, M.; Butz, Th. [Schuemann Sasol GmbH, Hamburg (Germany); Geissler, A. [Hochschule Zittau/Goerlitz (Germany)

    2002-09-01

    This paper reviews investigations into the composition of macro- and micro-crystalline paraffin waxes, focussed on the structure of non n-alkanes. The review covers a wide spectrum of investigations from the last 50 years. Applied analytical methods and results of paraffin wax analysis are compiled. The knowledge about qualitative and quantitative composition of non n-alkanes in paraffin waxes is mainly based on older publications. These results are differing from each other since different products and different analytical methods have been used. The paper refers to ongoing investigations based on the current instrumental analytics. (orig.)

  4. Preparation of microcrystalline mixtures for calibration of laser microbeam ionisation mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Ignatova, V. E-mail: velislav@uia.ua.ac.be; Vaeck, L. van; Ham, R. van; Adriaens, A.; Adams, F

    2002-03-11

    In this paper we describe the optimized experimental procedure and the apparatus to prepare microcrystalline samples of inorganic salt mixtures to be used as molecular standards in Laser Microprobe Mass Spectrometry (LMMS). Experimental data show the suitability of the approach for preparation of solid mixtures of various inorganic salts. The structure and homogeneity of the samples are studied by Scanning Electron Microscopy and Fourier Transform LMMS. Specifically, the in-sample and between-sample reproducibility reveals that the method allows the local sample composition to be sufficiently homogeneous for subsequent use in the semi-quantitative calibration of the molecular signals in LMMS.

  5. Preparation of microcrystalline mixtures for calibration of laser microbeam ionisation mass spectrometry

    CERN Document Server

    Ignatova, V A; Ham, R V; Adriaens, A; Adams, F

    2002-01-01

    In this paper we describe the optimized experimental procedure and the apparatus to prepare microcrystalline samples of inorganic salt mixtures to be used as molecular standards in Laser Microprobe Mass Spectrometry (LMMS). Experimental data show the suitability of the approach for preparation of solid mixtures of various inorganic salts. The structure and homogeneity of the samples are studied by Scanning Electron Microscopy and Fourier Transform LMMS. Specifically, the in-sample and between-sample reproducibility reveals that the method allows the local sample composition to be sufficiently homogeneous for subsequent use in the semi-quantitative calibration of the molecular signals in LMMS.

  6. Densification-induced conductivity percolation in high-porosity pharmaceutical microcrystalline cellulose compacts

    Science.gov (United States)

    Strømme, M.; Niklasson, G. A.; Ek, R.

    2003-01-01

    The percolation theory is established as a useful tool in the field of pharmaceutical materials science. It is shown that percolation theory, developed for analyzing insulator-conductor transitions, can be applied to describe imperfect dc conduction in pharmaceutical microcrystalline cellulose during densification. The system, in fact, exactly reproduces the values of the percolation threshold and exponent estimated for a three-dimensional random continuum. Our data clearly show a crossover from a power-law percolation theory region to a linear effective medium theory region at a cellulose porosity of ˜0.7.

  7. High-flux solar furnace processing of crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Pitts, J.R. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Menna, P. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)]|[ENEA-Centro Ricerche Fotovoltaiche, Portici 80055 (Italy); Landry, M.D. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Gee, J.M. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)]|[Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Ciszek, T.F. [National Renewable Energy Laboratory, Golden, Colorado, 80401 (United States)

    1997-02-01

    We studied the processing of crystalline-silicon solar cells using a 10-kW, high-flux solar furnace (HFSF). Major findings of this study include: (1) hydrogenated amorphous silicon films deposited on glass substrates can be converted to microcrystalline silicon by solid-phase crystallization in 5 seconds or less in the HFSF; (2) the presence of concentrated sunlight enhances the diffusion of phosphorus into silicon from a spin-on dopant source; (3) the combination of a porous-silicon surface layer and photo-enhanced impurity diffusion is very effective in gettering impurities from a metallurgical-grade silicon wafer or thin-layer silicon deposited using liquid-phase epitaxy; (4) a 14.1{percent}-efficient crystalline-silicon solar cell with an area of 4.6cm{sup 2} was fabricated using the HFSF for simultaneous diffusion of front n{sup +}-p and back p-p{sup +} junctions; and (5) we have shown that the HFSF can be used to texture crystalline-silicon surfaces and to anneal metal contacts printed on a silicon solar cell. {copyright} {ital 1997 American Institute of Physics.}

  8. High-flux solar furnace processing of crystalline silicon solar cells

    Science.gov (United States)

    Tsuo, Y. S.; Pitts, J. R.; Menna, P.; Landry, M. D.; Gee, J. M.; Ciszek, T. F.

    1997-02-01

    We studied the processing of crystalline-silicon solar cells using a 10-kW, high-flux solar furnace (HFSF). Major findings of this study include: (1) hydrogenated amorphous silicon films deposited on glass substrates can be converted to microcrystalline silicon by solid-phase crystallization in 5 seconds or less in the HFSF; (2) the presence of concentrated sunlight enhances the diffusion of phosphorus into silicon from a spin-on dopant source; (3) the combination of a porous-silicon surface layer and photo-enhanced impurity diffusion is very effective in gettering impurities from a metallurgical-grade silicon wafer or thin-layer silicon deposited using liquid-phase epitaxy; (4) a 14.1%-efficient crystalline-silicon solar cell with an area of 4.6 cm2 was fabricated using the HFSF for simultaneous diffusion of front n+-p and back p-p+ junctions; and (5) we have shown that the HFSF can be used to texture crystalline-silicon surfaces and to anneal metal contacts printed on a silicon solar cell.

  9. Microcrystalline coatings deposited by series double-pole electro-pulse discharge and its high-temperature oxidation behavior

    Institute of Scientific and Technical Information of China (English)

    徐强; 何业东; 王德仁; 齐慧滨; 李正伟; 高唯

    2002-01-01

    A new technique--series electro-pulse discharge (SEPD)--was developed as a surface coating process. In this process, both positive and negative poles of a pulse power were used as the depositing electrodes and the substrate alloy was used as an induction electrode. The physical process for such SEPD was tested by measuring the relationship between the discharge voltages and gaps in a pin-plate-pin system. Microcrystalline Ni20Cr alloy coatings and oxide- dispersed Ni20Cr alloy coatings were prepared on Ni20Cr alloy surface by using a vibrating SEPD device. Oxidation at 950℃ in ambient air showed that the microcrystalline Ni20Cr alloy coatings greatly improved the oxidation resistance of the substrate alloy. The addition of dispersed Y2O3 nano-particles into the microcrystalline coatings was found to further reduce the oxidation rate and enhance the oxide spallation resistance.

  10. Electrical transport in transverse direction through silicon carbon alloy multilayers containing regular size silicon quantum dots

    Science.gov (United States)

    Mandal, Aparajita; Kole, Arindam; Dasgupta, Arup; Chaudhuri, Partha

    2016-11-01

    Electrical transport in the transverse direction has been studied through a series of hydrogenated silicon carbon alloy multilayers (SiC-MLs) deposited by plasma enhanced chemical vapor deposition method. Each SiC-ML consists of 30 cycles of the alternating layers of a nearly amorphous silicon carbide (a-SiC:H) and a microcrystalline silicon carbide (μc-SiC:H) that contains high density of silicon quantum dots (Si-QDs). A detailed investigation by cross sectional TEM reveals preferential growth of densely packed Si-QDs of regular sizes ∼4.8 nm in diameter in a vertically aligned columnar structure within the SiC-ML. More than six orders of magnitude increase in transverse current through the SiC-ML structure were observed for decrease in the a-SiC:H layer thickness from 13 nm to 2 nm. The electrical transport mechanism was established to be a combination of grain boundary or band tail hopping and Frenkel-Poole (F-P) type conduction depending on the temperature and externally applied voltage ranges. Evaluation of trap concentration within the multilayer structures from the fitted room temperature current voltage characteristics by F-P function shows reduction up-to two orders of magnitude indicating an improvement in the short range order in the a-SiC:H matrix for decrease in the thickness of a-SiC:H layer.

  11. Color changing in denture base polyamide 12 and polyamide microcrystalline after polishing in laboratory and dental clinic

    Science.gov (United States)

    Sari, N. M. G. A. W.; Fardaniah, S.; Masulili, C.

    2017-08-01

    This study’s purpose was to compare color changes from polyamide 12 and polyamide microcrystalline materials. Each material was divided into two groups, polished with laboratory and clinical polishing equipment, and then immersed in a 28 °C coffee solution for seven days. Surface roughness was measured with a profilometer before the immersion. Color (L*, a*, and b*) was measured using a spectrophotometer before and after immersion. There were no significant color changes in the polyamide 12 and polyamide microcrystalline materials after immersion in the coffee solution.

  12. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.

    Science.gov (United States)

    Ke, S Y; Yang, J; Qiu, F; Wang, Z Q; Wang, C; Yang, Y

    2015-11-01

    We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

  13. High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer

    Science.gov (United States)

    Lee, Hyoung-Rae; Park, Jea-Gun

    2014-10-01

    We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage ( V th ) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO X distributed on the a-IGZO surface reduced the adsorption and the desorption of H2O and O2. This process is applicable to the TFT manufacturing process with a variable sputtering target.

  14. Crystallinity and thermal resistance of microcrystalline cellulose prepared from manau rattan (Calamusmanan)

    Science.gov (United States)

    Rizkiansyah, Raden Reza; Mardiyati, Steven, Suratman, R.

    2016-04-01

    The objective of this study was to prepare microcrystalline cellulose from Manau rattan (Calamusmanan) and to investigate the influence of concentration of sulfuric acid and hydrolysis time on crystallinity and thermal resistance of the microcrystalline cellulose (MCC). In this research, MCC was extracted through two stages, which is alkalization and acid hydrolysis. Alkalization was prepared by soaking manau rattan powder into sodium hydroxide (NaOH) 17.5wt% at 100°C for 8 hours. Acid hydrolysis was prepared by using sulfuric acid with concentration 0.1 M; 0.3 M; and 0.5 M for 4, 6, 8 and 10 hours. Crystallinity of MCC was measured by XRD, and thermal resistance was characterized by TGA. MCC was successfully extracted from manau rattan. The highest crystallinity of MCC obtained was 72.42% which prepared by acid hydrolysis with concentration 0.5 M for 10 hours. MCC prepared by acid hydrolysis with concentration 0.5 M for 10 hours not only resulted the highest crystallinity but also the best thermal resistance.

  15. Development and characterization of hybrid materials based on biodegradable PLA matrix, microcrystalline cellulose and organophilic silica

    Directory of Open Access Journals (Sweden)

    Fernanda Abbate dos Santos

    2014-10-01

    Full Text Available The goal of this work was to investigate the production and properties of hybrid materials based on poly(lactic acid (PLA, employing microcrystalline cellulose (MCC and organophilic silica (R972 as fillers. The composites were obtained by solution casting to form films. Each nanoparticle was incorporated at 3 wt. %, relative to the polymer matrix. In this experiment, four films were obtained (PLA, PLA/MCC, PLA/R972 and PLA/MCC/R972. The films properties were evaluated by X-ray diffractometry, nuclear magnetic resonance, Fourier transform infrared spectroscopy and mechanical properties. The results showed that each nanoparticle, added individually or both combined, had different effect on the final properties of the films. Microcrystalline cellulose can act as nucleating agent for the crystallization of PLA. Silica promoted an increase in rigidity, due to the strong intermolecular forces, while MCC addition promoted an increase in the molecular mobility of the polymeric chains. The PLA/MCC/R972 film showed the highest crystallinity degree and tensile modulus. This film presented a T1H value between both values found for PLA/MCC and PLA/R972 films. The results indicated that silica R972 could promote a decrease of the surface tension between PLA and cellulose.

  16. Preparation and Characterization of Cellulose Microcrystalline (MCC) from Fiber of Empty Fruit Bunch Palm Oil

    Science.gov (United States)

    Nasution, H.; Yurnaliza; Veronicha; Irmadani; Sitompul, S.

    2017-03-01

    Alpha cellulose which was isolated from cellulose of fiber empty fruit bunch palm oil was hidrolized with hydrochloric acid (2,5N) at 80°C to produce microcrystalline cellulose (MCC). Microcrystalline cellulose is an important additional ingredient in the pharmaceutical, food, cosmetics, and structural composites. In this study, MCC, alpha cellulose, and cellulose were characterized and thereafter were compared. Characterizations were made using some equipment such as x-ray diffraction (XRD), Fourier transform infrared (FTIR), scanning electron microscopy (SEM) and thermogravimetry analyzer (TGA). X-ray diffraction and infrared spectroscopy were studied to determine crystallinity and molecular structure of MCC, where scanning electron microscopy images were conducted for information about morfology of MCC. Meanwhile, thermal resistance of MCC was determined using thermogravimetry analyzer (TGA). From XRD and FTIR, the obtained results showed that the crystalline part was traced on MCC, where the –OH and C-O groups tended to reduced as alpha cellulose has changed to MCC. From SEM the image showed the reduction of particle size of MCC, while the thermal resistance of MCC was found lower as compared with cellulose and alpha cellulose as well, which was attributed to the lower molecular weight of MCC.

  17. Silicon spintronics.

    Science.gov (United States)

    Jansen, Ron

    2012-04-23

    Worldwide efforts are underway to integrate semiconductors and magnetic materials, aiming to create a revolutionary and energy-efficient information technology in which digital data are encoded in the spin of electrons. Implementing spin functionality in silicon, the mainstream semiconductor, is vital to establish a spin-based electronics with potential to change information technology beyond imagination. Can silicon spintronics live up to the expectation? Remarkable advances in the creation and control of spin polarization in silicon suggest so. Here, I review the key developments and achievements, and describe the building blocks of silicon spintronics. Unexpected and puzzling results are discussed, and open issues and challenges identified. More surprises lie ahead as silicon spintronics comes of age.

  18. High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.

    Science.gov (United States)

    Gao, Ying; Asadirad, Mojtaba; Yao, Yao; Dutta, Pavel; Galstyan, Eduard; Shervin, Shahab; Lee, Keon-Hwa; Pouladi, Sara; Sun, Sicong; Li, Yongkuan; Rathi, Monika; Ryou, Jae-Hyun; Selvamanickam, Venkat

    2016-11-02

    Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm(2)/V·s and saturation current, I/lW > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.

  19. Fenton chemistry-based detemplation of an industrially relevant microcrystalline beta zeolite. Optimization and scaling-up studies

    NARCIS (Netherlands)

    Ortiz-Iniesta, Maria Jesus; Melian-Cabrera, Ignacio

    2015-01-01

    A mild template removal of microcrystalline beta zeolite, based on Fenton chemistry, was optimized. Fenton detemplation was studied in terms of applicability conditions window, reaction rate and scale up. TGA and CHN elemental analysis were used to evaluate the detemplation effectiveness, while 'CP,

  20. Facile synthesis of TiO2/microcrystalline cellulose nanocomposites: photocatalytically active material under visible light irradiation

    Science.gov (United States)

    Doped TiO2 nanocomposites were prepared in situ by a facile and simple synthesis utilizing benign and renewable precursors such as microcrystalline cellulose (MC) and TiCl4 through hydrolysis in alkaline medium without the addition of organic solvents. The as-prepared nanocompos...

  1. Determination of nickel by flame atomic-absorption spectrophotometry after separation by adsorption of its nioxime complex on microcrystalline naphthalene.

    Science.gov (United States)

    Nagahiro, T; Puri, B K; Katyal, M; Satake, M

    1984-11-01

    A method has been developed for the determination of nickel in alloys by flame atomic-absorption spectrophotometry after formation of a water-insoluble complex, its adsorption on microcrystalline naphthalene, and dissolution of the complex and naphthalene in nitric acid and xylene.

  2. Facile synthesis of TiO2/microcrystalline cellulose nanocomposites: photocatalytically active material under visible light irradiation

    Science.gov (United States)

    Doped TiO2 nanocomposites were prepared in situ by a facile and simple synthesis utilizing benign and renewable precursors such as microcrystalline cellulose (MC) and TiCl4 through hydrolysis in alkaline medium without the addition of organic solvents. The as-prepared nanocompos...

  3. Effect of TCO/μc-Si:H Interface Modification on Hydrogenated Microcrystalline Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Shin-Wei Liang

    2013-01-01

    Full Text Available The effects of H2 plasma exposure on optical, electrical, and structural properties of fluorine-doped tin oxide (FTO and AZO/FTO substrates have been investigated. With increasing the time of H2-plasma exposure, the hydrogen radical and ions penetrated through the FTO surface to form more suboxides such as SnO and metallic Sn, which was confirmed by the XPS analysis. The Sn reduction on the FTO surface can be effectively eliminated by capping the FTO with a very thin layer of sputtered aluminum-doped zinc oxide (AZO, as confirmed by the XPS analysis. By using the AZO/FTO as front TCO with the subsequent annealing, the p-i-n μc-Si:H cell exhibited a significantly enhanced JSC from 15.97 to 19.40 mA/cm2 and an increased conversion efficiency from 5.69% to 7.09%. This significant enhancement was ascribed to the effective elimination of the Sn reduction on the FTO surface by the thin AZO layer during the Si-based thin-film deposition with hydrogen-rich plasma exposure. Moreover, the subsequent annealing of the sputtered AZO could lead to less defects as well as a better interface of AZO/FTO.

  4. Dissolution profile of novel composite pellet cores based on different ratios of microcrystalline cellulose and isomalt.

    Science.gov (United States)

    Luhn, Oliver; Kállai, Nikolett; Nagy, Zsombor Kristóf; Kovács, Kristóf; Fritzsching, Bodo; Klebovich, Imre; Antal, István

    2012-08-01

    There is a growing interest towards the application of inert cores as starting materials for pharmaceutical pellet manufacturing. They serve as alternatives to develop and adapt a relatively simple manufacturing technology compared with an extrusion/spheronisation process. The major objective of this study was to investigate the effect of the compositions of core materials on the drug release profile. Pure microcrystalline cellulose (MCC), isomalt and different types of novel composite MCC-isomalt cores were layered with model drug (sodium diclofenac) and were coated with acrylic polymer. The effect of the osmolality in the gastrointestinal tract was simulated using glucose as osmotically active agent during in vitro dissolution tests. The results demonstrated the dependence of drug dissolution profile on the ratio of MCC and isomalt in the core and the influence of osmotic properties of the dissolution medium. Isomalt used in the composite core was able to decrease the vulnerability of the dissolution kinetics to the changes in the osmotic environment.

  5. Physical stability of a microcrystalline beta-sitosterol suspension in oil

    DEFF Research Database (Denmark)

    von Bonsdorff-Nikander, Anna; Karjalainen, Milja; Rantanen, Jukka

    2003-01-01

    in the particle size. A previous work described how to produce a microcrystalline beta-sitosterol suspension. The present study deals with the stability of that suspension. Recrystallisation was carried out by two different methods; one based on rapid the other based on slow cooling, whereby six different......-ray diffraction. Suspensions can, in most cases, be stored for 16 weeks without any changes to the size and habit. The only evidence of crystal growth came from a suspension with a low sterol concentration at a temperature of +4 degrees C. This is due to the dissolution-diffusion process which is affected...... by temperature and viscosity. Suspensions containing higher amounts of sterol remained stable, if stored at +4 or -19 degrees C, for 16 weeks. The suspensions included both hemihydrous and monohydrous beta-sitosterol crystals. Suspensions containing less sterol showed greater amounts of monohydrated crystals...

  6. Combined effect of nitrogen doping and nanosteps on microcrystalline diamond films for improvement of field emission

    Energy Technology Data Exchange (ETDEWEB)

    Mengui, U.A., E-mail: ursulamengui@gmail.com [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Campos, R.A.; Alves, K.A.; Antunes, E.F. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Hamanaka, M.H.M.O. [Centro de Tecnologia da Informação Renato Archer, Divisão de Superfícies de Interação e Displays, Rodovia D. Pedro I (SP 65) km 143.6, CP 6162, CEP 13089-500, Campinas, SP (Brazil); Corat, E.J.; Baldan, M.R. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil)

    2015-04-15

    Highlights: • Hot filament chemical vapor deposition using methane, hydrogen and a solution of urea in methanol produced nitrogen-doped diamond films. • Diamonds had the grain morphology changed for long growth time (28 h), and the nitrogen doping were evaluated by Raman spectroscopy. • Field emission characterization shows a decrease up to 70% in threshold field, related to reference diamond layer. - Abstract: Nitrogen-doped microcrystalline diamond (N-MCD) films were grown on Si substrates using a hot filament reactor with methanol solution of urea as N source. Electrostatic self-assembly seeding of nanocrystalline diamond were used to obtain continuous and uniform films. Simultaneous changes in grains morphology and work function of diamond by nitrogen doping decreased the threshold field and the angular coefficient of Fowler–Nordhein plots. The field emission properties of our N-MCD films are comparable to carbon nanotube films.

  7. Isolation and Characterization of Microcrystalline Cellulose (MCC from Rice Husk (RH

    Directory of Open Access Journals (Sweden)

    Ahmad Zuliahani

    2016-01-01

    Full Text Available Microcrystalline cellulose (MCC was extracted from local agricultural residues, rice husk (RH. RH undergone alkaline, bleaching and acid hydrolysis treatments. Nitric acid was used in the hydrolysis process as a potential acid to replace strong acids such as hydrochloric and sulphuric acids. Hydrolysis of RH was carried out by using different molarity of nitric and hydrochloric acids (control. The properties of MCC obtained such as % yield, crystallinity index (CrI and functional group present were studied. % yield shown a comparable result regardless of different acid used. Whilst Fourier transform infrared (FTIR spectroscopy showed the progressive removal of non-cellulosic constituents. X-ray diffraction (XRD analysis revealed that the crystallinity increased with successive treatments regardless different molarity and acids used. The results showed potential of nitric acid to be used in MCC isolation process.

  8. Microcrystalline cellulose: Isolation, characterization and bio-composites application-A review.

    Science.gov (United States)

    Trache, Djalal; Hussin, M Hazwan; Hui Chuin, Caryn Tan; Sabar, Sumiyyah; Fazita, M R Nurul; Taiwo, Owolabi F A; Hassan, T M; Haafiz, M K Mohamad

    2016-12-01

    Considering its widespread usage in various fields, such as food, pharmaceutical, medical, cosmetic and polymer composites industries, microcrystalline cellulose (MCC) is becoming impellent due to increasing demand of alternatives to non-renewable and scarce fossil materials. Although it still suffers from some drawbacks, MCC has recently gained more interest owing to its renewability, non-toxicity, economic value, biodegradability, high mechanical properties, high surface area and biocompatibility. New sources, new isolation processes, and new treatments are currently under development to satisfy the increasing demand of producing new types of MCC-based materials on an industrial scale. Therefore, this review assembles the current knowledge on the isolation of MCC from different sources using various procedures, its characterization, and its application in bio-composites. Challenges and future opportunities of MCC-based composites are discussed as well as obstacles remaining for their extensive uses.

  9. Preconcentrafion/separation and determination of mercury using microcrystalline phenolphthalein modified by ethyl violet

    Institute of Scientific and Technical Information of China (English)

    LI Ying; LI Quanrnin; OUYANG Ruizhuo

    2007-01-01

    A novel method was developed for enrichment and separation of trace mercury using phenolphthalein modified by ethyl violet (EV).The effects of different parameters,such as stirring time, various metal ions and salts,and the amounts of phenolphthalein, NH4SCN,and EV on the extraction rate of mercury were studied,to select the experimental conditions.Under optimum conditions,mercury can be adsorbed on the surface of microcrystalline phenolphthalein by the intermolecular action strength.The possible reaction mechanism for the enrichment of mercury was discussed in detail.Hg(Ⅱ)could be completely separated from Fe(Ⅱ),Co(Ⅱ),Ni(Ⅱ),Mn(Ⅱ),Cd(Ⅱ),Cr(Ⅲ), and Al(Ⅲ) in the solution.The proposed method has been successfully applied to the determination of trace mercury in industrial wastewater with the recoveries 1.4%,1.1%,and1.2%,respectively.The analytical results were very satisfactory.

  10. Isolation and characterization of microcrystalline cellulose from oil palm biomass residue.

    Science.gov (United States)

    Mohamad Haafiz, M K; Eichhorn, S J; Hassan, Azman; Jawaid, M

    2013-04-02

    In this work, we successfully isolated microcrystalline cellulose (MCC) from oil palm empty fruit bunch (OPEFB) fiber-total chlorine free (TCF) pulp using acid hydrolysis method. TCF pulp bleaching carried out using an oxygen-ozone-hydrogen peroxide bleaching sequence. Fourier transform infrared (FT-IR) spectroscopy indicates that acid hydrolysis does not affect the chemical structure of the cellulosic fragments. The morphology of the hydrolyzed MCC was investigated using scanning electron microscopy (SEM), showing a compact structure and a rough surface. Furthermore, atomic force microscopy (AFM) image of the surface indicates the presence of spherical features. X-ray diffraction (XRD) shows that the MCC produced is a cellulose-I polymorph, with 87% crystallinity. The MCC obtained from OPEFB-pulp is shown to have a good thermal stability. The potential for a range of applications such as green nano biocomposites reinforced with this form of MCC and pharmaceutical tableting material is discussed.

  11. Experimental study of the hysteresis in hydrogenated amorphous silicon thin-film transistors for an active matrix organic light-emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jae-Hoon; Shin, Kwang-Sub; Park, Joong-Hyun; Han, Min-Koo [Seoul National University, Seoul (Korea, Republic of)

    2006-01-15

    An experimental scheme for validating the cause of the hysteresis phenomenon in hydrogenated amorphous-silicon-thin-film transistors (a-Si:H TFTs) is reported. A different gate starting voltage to the desired gate voltage has been considered to prove an effect of filling an acceptor-like or donor-like state in the interface. The integration time of the semiconductor parameter analyzer has also been controlled to investigate the effect between the de-trapping rate and hysteresis. The experimental results show that the previous data voltage in the (n-1)th frame affects the OLED current in the (n)th frame.

  12. Nano- and microcrystalline diamond deposition on pretreated WC-Co substrates: structural properties and adhesion

    Science.gov (United States)

    Fraga, M. A.; Contin, A.; Rodríguez, L. A. A.; Vieira, J.; Campos, R. A.; Corat, E. J.; Trava Airoldi, V. J.

    2016-02-01

    Many developments have been made to improve the quality and adherence of CVD diamond films onto WC-Co hard metal tools by the removing the cobalt from the substrate surface through substrate pretreatments. Here we compare the efficiency of three chemical pretreatments of WC-Co substrates for this purpose. First, the work was focused on a detailed study of the composition and structure of as-polished and pretreated substrate surfaces to characterize the effects of the substrate preparation. Considering this objective, a set of WC-9% Co substrates, before and after pretreatment, was analyzed by FEG-SEM, EDS and x-ray diffraction (XRD). The second stage of the work was devoted to the evaluation of the influence of seeding process, using 4 nm diamond nanoparticles, on the morphology and roughness of the pretreated substrates. The last and most important stage was to deposit diamond coatings with different crystallite sizes (nano and micro) by hot-filament CVD to understand fully the mechanism of growth and adhesion of CVD diamond films on pretreated WC-Co substrates. The transition from nano to microcrystalline diamond was achieved by controlling the CH4/H2 gas ratio. The nano and microcrystalline samples were grown under same time at different substrate temperatures 600 °C and 800 °C, respectively. The different substrate temperatures allowed the analysis of the cobalt diffusion from the bulk to the substrate surface during CVD film growth. Furthermore, it was possible to evaluate how the coating adhesion is affected by the diffusion. The diamond coatings were characterized by Raman spectroscopy, XRD, EDS, FEG-SEM, atomic force microscope and 1500 N Rockwell indentation to evaluate the adhesion.

  13. A study of ZnO:B films for thin film silicon solar cells

    Science.gov (United States)

    Yin, J.; Zhu, H.; Wang, Y.; Wang, Z.; Gao, J.; Mai, Y.; Ma, Y.; Wan, M.; Huang, Y.

    2012-10-01

    Boron doped zinc oxide (ZnO:B) films with different thicknesses were prepared with low pressure chemical vapor deposition (LPCVD) technique and implemented in thin film silicon solar cells as front and back electrodes. It is found that thick back ZnO:B film electrode in thin film silicon solar cells leads to a high fill factors (FF), which is attributed to an improvement of the electrical properties of the thick ZnO:B films, and in the meanwhile a slightly low short circuit currents (Jsc) due to a high light absorption in the thick back ZnO:B films. Differently, the thicker front ZnO:B film electrodes result in a high Jsc but a low FF of solar cells compared to the thinner ones. The low FF of the solar cells may be caused by the local shunt originated from the pinholes or by the cracks (zones of non-dense material) formed in particular in microcrystalline silicon materials deposited on rough front ZnO:B films. As to the high Jsc, it is expected to be due to a good light trapping effect inside solar cells grown on rough front ZnO:B films. Moreover, the application of high reflective polyvinyl butyral (PVB) foils effectively enhances the utilization of incident light in solar cells. By optimizing deposition process of the ZnO:B films, high efficiencies of 8.8% and 10% for single junction thin film amorphous silicon solar cells (a-Si:H, intrinsic layer thickness < 200 nm) and amorphous/microcrystalline silicon tandem solar cells (a-Si:H/μc-Si:H, intrinsic amorphous silicon layer thickness < 220 nm), respectively, are achieved.

  14. The influence of the moisture content of microcrystalline cellulose on the coating process in a fluidized bed

    Directory of Open Access Journals (Sweden)

    Silva O. S.

    2004-01-01

    Full Text Available The objective of this work was to study the coating of microcrystalline cellulose with a polymeric suspension in a fluidized bed. The coating operation was carried out using a fluidized bed with top spraying by a double-fluid nozzle. The fluidized bed consists of a cylindrical column made of plexiglass with a height of 0.6 m and an inner diameter of 0.14 m. The polymeric coating suspension was formulated using Eudragit® as the basic component. As the quality of the coating product is greatly affected by the spraying characteristics, the influence of the flow rate of the coating suspension and the moisture content of the particles on the agglomeration index and efficiency of the process of coating microcrystalline cellulose was analyzed.

  15. Stability of amorphous silicon alloy triple-junction solar cells and modules

    Energy Technology Data Exchange (ETDEWEB)

    Sato, K.; Aiga, M.; Otsubo, M.

    1987-06-25

    Results on reliability test for amorphous silicon alloy triple-junction solar cells and modules are described. It has been found that, for a-SiGe:H pin cells, reduction of the stress in the film is of first importance for stability. Application of low-temperature-deposited microcrystalline p-layer for each sub cell and of thinner i-layers for the middle and the bottom cells improves stability of triple-junction cells, by enhancing the electric field in the i-layers.

  16. Growth and tribological properties of diamond films on silicon and tungsten carbide substrates

    Science.gov (United States)

    Radhika, R.; Ramachandra Rao, M. S.

    2016-11-01

    Hot filament chemical vapor deposition technique was used to deposit microcrystalline diamond (MCD) and nanocrystalline diamond (NCD) films on silicon (Si) and tungsten carbide (WC-6Co) substrates. Friction coefficient of larger diamond grains deposited on WC-6Co substrate shows less value approximately 0.2 while this differs marginally on films grown on Si substrate. The study claims that for a less friction coefficient, the grain size is not necessarily smaller. However, the less friction coefficient (less than 0.1 saturated value) in MCD and NCD deposited on Si is explained by the formation of graphitized tribolayer. This layer easily forms when diamond phase is thermodynamically unstable.

  17. Silicon Spintronics

    NARCIS (Netherlands)

    Jansen, R.

    2008-01-01

    Integration of magnetism and mainstream semiconductor electronics could impact information technology in ways beyond imagination. A pivotal step is implementation of spin-based electronic functionality in silicon devices. Remarkable progress made during the last two years gives confidence that this

  18. Use of the microcrystalline limestone as building material: the "GrisPulpis"case

    Directory of Open Access Journals (Sweden)

    García del Cura, M. A.

    2005-03-01

    Full Text Available Gris Pulpis is a Jurassic microcrystalline limestone found in the Maestrazgo Area of the Iberian Mountain Range (province of Castellón, Spain. This paper reports the results of a detailed study of the mineralogical, pelrographic and chromatic characteristics, as well as the durability, of this stone, classified as a commercial marble for its polish ability. The study determined the relationship between the structural characteristics of the stone, with a proliferation of stylolites and veins, and its physical properties. Its flexura I strength was found to be greater than would normally be expected in a structure with such a dense web of stylolites and veins. This is due to the structural and mineralogical properties of these stylolites, characterised by an extremely wavy design, scant mineral infillings and, occasionally, subsequent cementation. The characteristics of the porous media of homogeneous microcrystalline limestones such as Gris Pulpis largely explain the durability of this stone when exposed to freeze-thaw cycles and salt crystallisation. These arc the properties that make Gris Pulpis limestone, quarried in the Spanish Region of Valencia, a valuable building material for both architectural and civil engineering applications

    En este trabajo se analizan las propiedades físicas y la durabilidad de una caliza microcristalina.El Gris Pulpis es una caliza microcristalina del Jurásico de la Cordillera Ibérica (Maestrazgo, cuyas características mineralógicas, petrográficas, cromáticas y alterabilidad se determinan detalladamente. Su aptitud para el pulido hace que sea un mármol comercial. Se establece la influencia de sus características estructurales (estilolitos, vénulas... en sus propiedades físicas. Su resistencia a flexión supera los valores que cabría esperar en función de la estructura de esta roca que, a veces, presenta abundantes estilolitos y vénulas. Esto es debido a las características estructurales y

  19. Influence of Tableting on Enzymatic Activity of Papain along with Determination of Its Percolation Threshold with Microcrystalline Cellulose.

    Science.gov (United States)

    Sharma, Manu; Sharma, Vinay; Majumdar, Dipak K

    2014-01-01

    The binary mixture tablets of papain and microcrystalline cellulose (MCC), dicalcium phosphate dihydrate (DCP), carrageenan, tragacanth, and agar were prepared by direct compression. Carrageenan, tragacanth, and agar provided maximum protection to enzyme activity compared to MCC and DCP. However, stability studies indicated highest loss of enzyme activity with carrageenan, tragacanth, and agar. Therefore, compression behaviour of different binary mixtures of papain with MCC at different compaction pressures, that is, 40-280 MPa, was studied according to Heckel equation. The compressibility studies of binary mixtures indicated brittle behavior of papain. The application of percolation theory on the relationship between critical density as a function of enzyme activity and mixture composition revealed the presence of percolation threshold for binary mixture. Papain-MCC mixture composition showed significant percolation threshold at 18.48% (w/w) papain loading. Microcrystalline cellulose provided higher protection during stability study. However, higher concentrations of microcrystalline cellulose, probably as dominant particles, do not protect the enzyme with their plastic deformation. Below the percolation threshold, that is, 18.48% (w/w) papain amount in mixture with plastic excipient, activity loss increases strongly because of higher shearing forces during compaction due to system dominance of plastic particles. This mixture range should therefore be avoided to get robust formulation of papain.

  20. Boron-doped hydrogenated microcrystalline silicon oxide (μc-SiOx:H) for application in thin-film silicon solar cells

    NARCIS (Netherlands)

    Lambertz, A.; Finger, F.; Holländer, B.; Rath, J.K.; Schropp, R.E.I.

    2011-01-01

    We report on the development of p-type μc-SiOx:H material, in particular the relationship between the deposition parameters and the material properties like band gap, electrical conductivity, and crystalline volume fraction. The material was deposited from gas mixtures of silane, carbon dioxide and

  1. Lithographically patterned silicon nanostructures on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Megouda, Nacera [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Piret, Gaeelle; Galopin, Elisabeth; Coffinier, Yannick [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Hadjersi, Toufik, E-mail: hadjersi@yahoo.com [Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Elkechai, Omar [Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); and others

    2012-06-01

    The paper reports on controlled formation of silicon nanostructures patterns by the combination of optical lithography and metal-assisted chemical dissolution of crystalline silicon. First, a 20 nm-thick gold film was deposited onto hydrogen-terminated silicon substrate by thermal evaporation. Gold patterns (50 {mu}m Multiplication-Sign 50 {mu}m spaced by 20 {mu}m) were transferred onto the silicon wafer by means of photolithography. The etching process of crystalline silicon in HF/AgNO{sub 3} aqueous solution was studied as a function of the silicon resistivity, etching time and temperature. Controlled formation of silicon nanowire arrays in the unprotected areas was demonstrated for highly resistive silicon substrate, while silicon etching was observed on both gold protected and unprotected areas for moderately doped silicon. The resulting layers were characterized using scanning electron microscopy (SEM).

  2. Application of ethyl cellulose, microcrystalline cellulose and octadecanol for wax based floating solid dispersion pellets.

    Science.gov (United States)

    Yan, Hong-Xiang; Zhang, Shuang-Shuang; He, Jian-Hua; Liu, Jian-Ping

    2016-09-01

    The present study aimed to develop and optimize the wax based floating sustained-release dispersion pellets for a weakly acidic hydrophilic drug protocatechuic acid to achieve prolonged gastric residence time and improved bioavailability. This low-density drug delivery system consisted of octadecanol/microcrystalline cellulose mixture matrix pellet cores prepared by extrusion-spheronization technique, coated with drug/ethyl cellulose 100cp solid dispersion using single-step fluid-bed coating method. The formulation-optimized pellets could maintain excellent floating state without lag time and sustain the drug release efficiently for 12h based on non-Fickian transport mechanism. Observed by SEM, the optimized pellet was the dispersion-layered spherical structure containing a compact inner core. DSC, XRD and FTIR analysis revealed drug was uniformly dispersed in the amorphous molecule form and had no significant physicochemical interactions with the polymer dispersion carrier. The stability study of the resultant pellets further proved the rationality and integrity of the developed formulation.

  3. The effect of wax on compaction of microcrystalline cellulose beads made by extrusion and spheronization.

    Science.gov (United States)

    Iloañusi, N O; Schwartz, J B

    1998-01-01

    The effect of wax on the deformation behavior and compression characteristics of microcrystalline cellulose (Avicel PH-101) and acetaminophen (APAP) beads is described. Beads of Avicel PH-101 and APAP formulations were prepared using extrusion and spheronization technology. A waxy material, glyceryl behenate, N.F. (Compritol), was added to the formulations in amounts ranging from 10% to 70% of total solid weight. Beads with a selected particle size range of 16-30 mesh were compressed with an instrumented single punch Manesty F press utilizing a 7/16-in. flat-faced tooling set. Compaction profiles were generated for the tablets to evaluate the effect of wax on the densification of beads containing wax. Beads made without wax (the control formulation) required greater compression forces to form cohesive tablets. As the amount of wax in the bead formulation was increased, the beads become more plastic and compressible. The Heckel equation which relates densification to compression pressure was used to evaluate the deformation mechanisms of the bead formulations. The analysis shows that as the level of wax in the bead formulation is increased, the yield pressure decreases, indicating that the beads densify by a plastic deformation mechanism.

  4. The rheological properties of modified microcrystalline cellulose containing high levels of model drugs.

    Science.gov (United States)

    Knight, Paul E; Podczeck, Fridrun; Newton, J Michael

    2009-06-01

    The rheological properties of different types of microcrystalline cellulose (MCC) mixed with model drugs and water have been evaluated to identify the influence of sodium carboxymethylcellulose (SCMC) added to the cellulose during preparation. A ram extruder was used as a capillary rheometer. The mixtures consisted of 20% spheronizing agent (standard grade MCC or modified types with 6% or 8% of low viscosity grade SCMC) and 80% of ascorbic acid, ibuprofen or lactose monohydrate. The introduction of SCMC changed all rheological parameters assessed. It produced more rigid systems, requiring more stress to induce and maintain flow. Degree of non-Newtonian flow, angle of convergence, extensional viscosity, yield and die land shear stress at zero velocity, and static wall friction were increased, but recoverable shear and compliance were decreased. The presence of SCMC did not remove the influence of the type of drug. The mixture of ibuprofen and standard MCC had the lowest values for shear stress as a function of the rate of shear, extensional viscosity, and angle of convergence, but the highest values for recoverable shear and compliance. The findings indicate that the system has insufficient rigidity to form pellets.

  5. Extraction of microcrystalline cellulose from rice straw and its effect on polyvinyl alcohol biocomposites film

    Science.gov (United States)

    Chin, Kwok-Mern; Ting, Sam Sung; Lin, Ong Hui; Owi, Wei Tieng

    2017-07-01

    The poor management and underutilization of agricultural wastes had proliferated interest of researchers around the world to find alternatives to utilize them as potential value-added products. One of the green alternatives is by extracting cellulose from these waste materials and incorporating them in polymer as reinforcement fillers. The surging amount of plastic waste also posed major issues to the environment due to its recalcitrance to degrade. Microcrystalline cellulose (MCC-RS) was extracted from rice straw through cyclic alkaline and bleaching treatment to remove hemicellulose and lignin respectively. Polyvinyl alcohol (PVOH) was chosen as the matrix and different ratios of PVOH / MCC-RS films were prepared (2.5, 5.0, 7.5 and 10.0wt% of MCC) through solution casting method and its tensile, thermal and morphological properties were studied. X-ray powder diffraction (XRD) results showed increased crystallinity of MCC-RS after chemical treatment (from 44.5% to 60.8%) due to the successful removal of lignin and hemicellulose, which was then confirmed with Fourier transform infrared spectroscopy (FTIR) results. For the biocomposites, both tensile strength and Young's modulus of the films increased with increasing MCC-RS content up until 7.5wt%, supported with scanning electron microscopy (SEM) results which depicted improvement in the interfacial adhesion between MCC-RS and PVOH. From the overall results, the improvement in properties of biocomposite from cellulose-based microfiller had shown promising future in application of the water soluble plastic packaging industry.

  6. Green synthesis of hybrid graphene oxide/microcrystalline cellulose aerogels and their use as superabsorbents

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Xiao; Huang, Ting; Yang, Jing-hui; Zhang, Nan; Wang, Yong, E-mail: yongwang1976@163.com; Zhou, Zuo-wan

    2017-08-05

    Highlights: • Hybrid GO/MCC aerogels were prepared using LiBr aqueous solution as the solvent. • GO was exfoliated by MCC through the strong interaction between them. • The adsorption ability of GO per unit mass in the hybrid aerogels was greatly enhanced. - Abstract: In this work, we developed a green synthesis method to prepare the hybrid aerogels containing graphene oxide (GO) and microcrystalline cellulose (MCC) using lithium bromide (LiBr) aqueous solution as the solvent, which insured the complete dissolution of MCC. The interaction between GO and MCC was investigated through different methods The results demonstrate that there is a strong interaction between GO and MCC molecules, which promotes the exfoliation of GO in the hybrid aerogels. The hybrid GO/MCC aerogels exhibit typical three dimensional porous structure and the pore morphology can be well adjusted by changing the content of GO. The adsorption ability of the hybrid aerogels was measured using methylene blue (MB) as an adsorbate. The results show that the adsorption ability of GO per unit mass is greatly enhanced compared with the pure GO aerogel, especially at relatively low GO content the adsorption amount of GO per unit mass is enhanced up to 2630 mg/g. Further results demonstrate that the hybrid GO/MCC aerogels still obey the pseudo-second-order adsorption model, which is similar to that of the pure GO aerogel. The mechanism for the amplified adsorption ability of GO in the hybrid GO/MCC aerogels is then analyzed.

  7. Evaluation of drug release from coated pellets based on isomalt, sugar, and microcrystalline cellulose inert cores.

    Science.gov (United States)

    Kállai, Nikolett; Luhn, Oliver; Dredán, Judit; Kovács, Kristóf; Lengyel, Miléna; Antal, István

    2010-03-01

    The objective of the present study was to investigate the effect of the pellet core materials isomalt, sugar, and microcrystalline cellulose on the in vitro drug release kinetics of coated sustained-release pellets as well as to evaluate the influence of different ratios of polymethacrylate copolymers exhibiting different permeability characteristics on the drug release rate. For characterization of the drug release process of pellets, the effect of osmolality was studied using glucose as an osmotically active agent in the dissolution medium. The pellet cores were layered with diclofenac sodium as model drug and coated with different ratios of Eudragit RS30D and Eudragit RL30D (ERS and ERL; 0:1 and 0.5:0.5 and 1:0 ratio) in a fluid bed apparatus. Physical characteristics such as mechanical strength, shape, and size proved that the inert cores were adequate for further processing. The in vitro dissolution tests were performed using a USP Apparatus I (basket method). The results demonstrated that, besides the ratio of the coating polymers (ERS/ERL), the release mechanism was also influenced by the type of starter core used. Sugar- and isomalt-type pellet cores demonstrated similar drug release profiles.

  8. Microstructure and mechanical properties of Ni and Fe-base boride-dispersion-strengthened microcrystalline alloys

    Energy Technology Data Exchange (ETDEWEB)

    Wade, C.S.; Park, H.G.; Hoagland, R.G. (Ohio State Univ., Columbus (USA))

    This paper considers the relation between microstructure and mechanical properties of two Ni-base and two Fe-base Boride-Dispersion-Strengthened Microcrystalline (BDSM) alloys. In these very fine grained materials the borides were primarily Cr, Mo, and MoFe in a fcc matrix in three of the alloys, and a bcc in one of the Fe-base alloys. Strength data and resistance to stress corrosion cracking are reported and, in the latter case, extraordinary resistance to SCC in NaCl, Na{sub 2}S{sub 2}O{sub 3} and boiling MgCl{sub 2} environments was observed in every case. The fcc BDSM alloys also demonstrated excellent thermal stability in terms of strength and fracture roughness up to 1000 C. The bcc alloy suffered severe loss of toughness. The fracture mode involved ductile rupture in all alloys and they display a reasonably linear correlation between K{sub Ic} and the square root of particle spacing.

  9. The microstructure evolution of hydrogenated microcrystalline germanium promoted by power gradient method

    Science.gov (United States)

    Wang, Xinyu; Ni, Jian; Li, Chang; Sun, Xiaoxiang; Li, Zhenglong; Cai, Hongkun; Li, Juan; Zhang, Jianjun

    2016-12-01

    This paper studies the microstructure evolution of hydrogenated microcrystalline germanium (μc-Ge:H) thin films deposited by plasma enhanced chemical vapor deposition (PECVD). There is an amorphous incubation layer formed in the initial deposition stage of μc-Ge:H thin film. It is demonstrated that the thickness of incubation layer can be reduced by high hydrogen dilution and high discharge power method. However, at high hydrogen dilution, the deposition rate of μc-Ge:H appears a sharply decrease. Using a high discharge power can compensate the deposition rate decrease but lead to decrease of average grain size and appearance of micro-void in the μc-Ge:H thin film. In addition, by comparing two thickness groups of μc-Ge:H thin films deposited at different discharge powers, it is noticed that the evolution process relates to the formation of crystal nucleuses. Thus, a power gradient method is proposed to understand the mechanism of nucleation and crystal growth in the initial deposition process of μc-Ge:H films. Finally, by power gradient method, the incubation layer thickness of μc-Ge:H thin films has been decreased to less than 6 nm. Moreover, Raman scattering spectra shows a 38 nm μc-Ge:H film has a crystal fraction (XC) of 62.4%. Meanwhile, the mobility of TFT devices shows the improved electrical property of μc-Ge:H film deposited by power gradient method.

  10. Formulation of ranitidine pellets by extrusion-spheronization with little or no microcrystalline cellulose.

    Science.gov (United States)

    Basit, A W; Newton, J M; Lacey, L F

    1999-01-01

    The present study was concerned with the feasibility of formulating ranitidine into pellets with a range of alternative excipients in place of microcrystalline cellulose (MCC). Eight ranitidine formulations employing two or more of the excipients lactose, barium sulfate, glyceryl monostearate, and MCC were processed by extrusion-spheronization, and characterized according to a series of physico-mechanical and dissolution criteria. Formulations containing lactose produced unsatisfactory pellets of wide size distribution and irregular shape, whereas formulations incorporating barium sulfate and glyceryl monostearate with or without MCC resulted in relatively spherical pellets of narrow size distribution and good mechanical properties. Ranitidine release was found to be rapid and virtually complete within 15 min, regardless of the pellet formulation. A direct relationship was observed between the concentration of MCC in the formulation and the properties of the pellets. In general, the higher the concentration of MCC, the rounder, stronger, and less friable the pellets. However, even pellets without MCC were also successfully prepared with a superior size distribution and shape over those with MCC. Overall, these results confirm that ranitidine can be formulated into pellet dosage forms with little or no MCC by the extrusion-spheronization process.

  11. Crystallization of II-VI semiconductor compounds forming long microcrystalline linear assemblies

    Directory of Open Access Journals (Sweden)

    Marcelino Becerril

    2013-04-01

    Full Text Available In this work we report the formation of long microcrystalline linear self-assemblies observed during the thin film growth of several II-VI compounds. Polycrystalline CdTe, CdS, CdCO3, and nanocrystalline CdTe:Al thin films were prepared on glass substrates by different deposition techniques. In order to observe these crystalline formations in the polycrystalline materials, the thin film growth was suspended before the grains reached to form a continuous layer. The chains of semiconductor crystals were observed among many isolated and randomly distributed grains. Since CdTe, CdTe:Al, CdS and CdCO3 are not ferroelectric and/or ferromagnetic materials, the relevant problem would be to explain what is the mechanism through which the grains are held together to form linear chains. It is well known that some nanocrystalline materials form rods and wires by means of electrostatic forces. This occurs in polar semiconductors, where it is assumed that the attraction forces between surface polar faces of the small crystals are the responsible for the chains formation. Since there are not too many mechanisms responsible for the attraction we assume that a dipolar interaction is the force that originates the formation of chain-like grain clusters. The study of this property can be useful for the understanding of nucleation processes in the growth of semiconductor thin films.

  12. Hydrolysis of microcrystalline cellulose using functionalized Bronsted acidic ionic liquids - A comparative study.

    Science.gov (United States)

    Parveen, Firdaus; Patra, Tanmoy; Upadhyayula, Sreedevi

    2016-01-01

    Cellulose conversion to platform chemicals is required to meet the demands of increasing population and modernization of the world. Hydrolysis of microcrystalline cellulose was studied with SO3H, COOH and OH functionalized imidazole based ionic liquid using 1-butyl-3-methylimidazolium chloride [BMIM]Cl as a solvent. The influence of temperature, time, acidity of ionic liquids and catalyst loading was studied on hydrolysis reaction. The maximum %TRS yield 85%, was obtained at 100°C and 90min with 0.2g of SO3H functionalized ionic liquid. UV-vis spectroscopy using 4-nitro aniline as an indicator was performed to find out the Hammett function of ionic liquid and acidity trends are as follows: SO3H>COOH>OH. Density functional theory (DFT) calculations were performed to optimize the ionic liquid and their conjugate bases at B3LYP 6-311G++ (d, p) level using Gaussian 09 program. Theoretical findings are in agreement with the experimental results. Copyright © 2015 Elsevier Ltd. All rights reserved.

  13. The Effect of Various Acids on Properties of Microcrystalline Cellulose (MCC) Extracted from Rice Husk (RH)

    Science.gov (United States)

    Nur Hanani, A. S.; Zuliahani, A.; Nawawi, W. I.; Razif, N.; Rozyanty, A. R.

    2017-05-01

    Microcrystalline cellulose (MCC) was successfully extracted from rice husk (RH) via acid hydrolysis process using nitric acid (HNO3) in comparison with sulphuric acid (H2SO4) and hydrochloric acid (HCl). MCC-RH extracted using HNO3 produced the highest percentage yield at 83.5% as compared to H2SO4 and HCl at 80.6% and 81.8% respectively. Analysis of Fourier Transform Infrared (FTIR) spectroscopy affirmed the successive elimination of non-cellulosic material from RH cellulose resulting highly purified MCC-RH. X-ray Diffraction (XRD) analysis showed MCC-RH treated with HCl gives the highest crystallinity index value of 54.2% while HNO3 and H2SO4 produced comparable results of 52.4% and 49.7% respectively. The results indicate successive extraction of MCC-RH using HNO3 that has great potential to replace strong acid such as H2SO4 and HCl in acid hydrolysis.

  14. Evaluation of several microcrystalline celluloses obtained from agricultural by-products

    Directory of Open Access Journals (Sweden)

    John Rojas

    2011-01-01

    Full Text Available Microcrystalline cellulose (MCCI has been widely used as an excipient for direct compression due to its good flowability, compressibility, and compactibility. In this study, MCCI was obtained from agricultural by-products, such as corn cob, sugar cane bagasse, rice husk, and cotton by pursuing acid hydrolysis, neutralization, clarification, and drying steps. Further, infrared spectroscopy (IR, X-ray diffraction (XRD, optical microscopy, degree of polymerization (DP, and powder and tableting properties were evaluated and compared to those of Avicel PH101, Avicel PH102, and Avicel PH200. Except for the commercial products, all materials showed a DP from 55 to 97. Particles of commercial products and corn cob had an irregular shape, whereas bagasse particles were elongated and thick. Rice and cotton particles exhibited a flake-like and fiber-like shape, respectively. MCCI as obtained from rice husk and cotton was the most densified material, while that produced from corn cob and bagasse was bulky, porous, and more compressible. All products had a moisture content of less than 10% and yields from 7.4% to 60.4%. MCCI as obtained from bagasse was the most porous and compressible material among all materials. This product also showed the best tableting properties along with Avicel products. Likewise, all MCCI products obtained from the above-mentioned sources showed a more rapid disintegration time than that of Avicel products. These materials can be used as a potential source of MCCI in the production of solid dosage forms.

  15. Applicability of low-melting-point microcrystalline wax to develop temperature-sensitive formulations.

    Science.gov (United States)

    Matsumoto, Kohei; Kimura, Shin-Ichiro; Iwao, Yasunori; Itai, Shigeru

    2017-10-30

    Low-melting-point substances are widely used to develop temperature-sensitive formulations. In this study, we focused on microcrystalline wax (MCW) as a low-melting-point substance. We evaluated the drug release behavior of wax matrix (WM) particles using various MCW under various temperature conditions. WM particles containing acetaminophen were prepared using a spray congealing technique. In the dissolution test at 37°C, WM particles containing low-melting-point MCWs whose melting was starting at approx. 40°C (Hi-Mic-1045 or 1070) released the drug initially followed by the release of only a small amount. On the other hand, in the dissolution test at 20 and 25°C for WM particles containing Hi-Mic-1045 and at 20, 25, and 30°C for that containing Hi-Mic-1070, both WM particles showed faster drug release than at 37°C. The characteristic drug release suppression of WM particles containing low-melting-point MCWs at 37°C was thought attributable to MCW melting, as evidenced by differential scanning calorimetry analysis and powder X-ray diffraction analysis. Taken together, low-melting-point MCWs may be applicable to develop implantable temperature-sensitive formulations that drug release is accelerated by cooling at administered site. Copyright © 2017 Elsevier B.V. All rights reserved.

  16. Evaluation of several microcrystalline celluloses obtained from agricultural by-products.

    Science.gov (United States)

    Rojas, John; Lopez, Alvin; Guisao, Santiago; Ortiz, Carlos

    2011-07-01

    Microcrystalline cellulose (MCCI) has been widely used as an excipient for direct compression due to its good flowability, compressibility, and compactibility. In this study, MCCI was obtained from agricultural by-products, such as corn cob, sugar cane bagasse, rice husk, and cotton by pursuing acid hydrolysis, neutralization, clarification, and drying steps. Further, infrared spectroscopy (IR), X-ray diffraction (XRD), optical microscopy, degree of polymerization (DP), and powder and tableting properties were evaluated and compared to those of Avicel PH101, Avicel PH102, and Avicel PH200. Except for the commercial products, all materials showed a DP from 55 to 97. Particles of commercial products and corn cob had an irregular shape, whereas bagasse particles were elongated and thick. Rice and cotton particles exhibited a flake-like and fiber-like shape, respectively. MCCI as obtained from rice husk and cotton was the most densified material, while that produced from corn cob and bagasse was bulky, porous, and more compressible. All products had a moisture content of less than 10% and yields from 7.4% to 60.4%. MCCI as obtained from bagasse was the most porous and compressible material among all materials. This product also showed the best tableting properties along with Avicel products. Likewise, all MCCI products obtained from the above-mentioned sources showed a more rapid disintegration time than that of Avicel products. These materials can be used as a potential source of MCCI in the production of solid dosage forms.

  17. Microcrystalline cellulose-carboxymethyl cellulose sodium as an effective dispersant for drug nanocrystals: A case study.

    Science.gov (United States)

    Dan, JiXiu; Ma, YueQin; Yue, PengFei; Xie, YuanBiao; Zheng, Qin; Hu, PengYi; Zhu, WeiFeng; Yang, Ming

    2016-01-20

    This study is aimed at seeking an alternative dispersant for spray drying of drug nanosuspensions. The ideal dispersant is not only able to prevent the agglomeration of drug nanocrystals in the suspension state, but also it is able to preserve redispersibility of drug nanocrystals after drying. An active pharmaceutical ingredient (API) was used as a model drug. API nanosuspensions were prepared by homogenization and converted into nanocrystals powder (API-NP) with microcrystalline cellulose-carboxymethyl cellulose sodium (MCCS) via spray drying. It was found that MCCS was able to prevent the aggregation of API-NP in the suspension state and the agglomeration during spray-drying process, possibility due to its high Zeta potential and steric barrier from network structure, and reduction of API size at nanoscale and incorporation into MCCS network structure did not affect the solid state of API as evidenced by DSC and XRD analysis. The spray-dried API-NP/MCCS powders exhibited excellent sphere-shape performance, and could easily redispersed to API-NC suspensions state. Dissolution of the spray-dried API-NP was distinctly superior to those of the crude powder and physical mixture, respectively. Within 30 min, approximate 85.87% of API was dissolved from the API-NP/MCCS. MCCS was demonstrated to be an effective dispersant for spray-dried drug nanocrystals and preservation of the nanocrystals associated with excellent redispersibility.

  18. Physicochemical of microcrystalline cellulose from oil palm fronds as potential methylene blue adsorbents.

    Science.gov (United States)

    Hussin, M Hazwan; Pohan, Nurul Aqilah; Garba, Zaharaddeen N; Kassim, M Jain; Rahim, Afidah Abdul; Brosse, Nicolas; Yemloul, Mehdi; Fazita, M R Nurul; Haafiz, M K Mohamad

    2016-11-01

    The present study sheds light on the physical and chemical characteristics of microcrystalline cellulose (MCC) isolated from oil palm fronds (OPF) pulps. It was found that the OPF MCC was identified as cellulose II polymorph, with higher crystallinity index than OPF α-cellulose (CrIOPFMCC: 71%>CrIOPFα-cellulose: 47%). This indicates that the acid hydrolysis allows the production of cellulose that is highly crystalline. BET surface area of OPF MCC was found to be higher than OPF α-cellulose (SBETOPFMCC: 5.64m(2)g(-1)>SBETOPFα-cellulose:Qa(0) 2.04m(2)g(-1)), which corroborates their potential as an adsorbent. In batch adsorption studies, it was observed that the experimental data fit well with Langmuir adsorption isotherm in comparison to Freundlich isotherm. The monolayer adsorption capacity (Qa(0)) of OPF MCC was found to be around 51.811mgg(-1) and the experimental data fitted well to pseudo-second-order kinetic model.

  19. Direct observation and mechanism of increased emission sites in Fe-coated microcrystalline diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Panda, Kalpataru; Sundaravel, B.; Panigrahi, B. K. [Materials Physics Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India); Huang, Pin-Chang; Shih, Wen-Ching [Graduate Institute in Electro-Optical Engineering, Tatung University, Taipei 104, Taiwan (China); Chen, Huang-Chin; Lin, I-Nan [Department of Physics, Tamkang University, New-Taipei 251, Taiwan (China)

    2012-06-15

    The electron field emission (EFE) properties of microcrystalline diamond (MCD) films are significantly enhanced due to the Fe coating and post-annealing processes. The 900 Degree-Sign C post-annealed Fe coated diamond films exhibit the best EFE properties, with a turn on field (E{sub 0}) of 3.42 V/{mu}m and attain EFE current density (J{sub e}) of 170 {mu}A/cm{sup 2} at 7.5 V/{mu}m. Scanning tunnelling spectroscopy (STS) in current imaging tunnelling spectroscopy mode clearly shows the increased number density of emission sites in Fe-coated and post-annealed MCD films than the as-prepared ones. Emission is seen from the boundaries of the Fe (or Fe{sub 3}C) nanoparticles formed during the annealing process. In STS measurement, the normalized conductance (dI/dV/I/V) versus V curves indicate nearly metallic band gap, at the boundaries of Fe (or Fe{sub 3}C) nanoparticles. Microstructural analysis indicates that the mechanism for improved EFE properties is due to the formation of nanographite that surrounds the Fe (or Fe{sub 3}C) nanoparticles.

  20. 微晶纤维素的研究进展%Research progress of microcrystalline cellulose

    Institute of Scientific and Technical Information of China (English)

    吴伟兵; 庄志良; 景宜; 戴红旗

    2013-01-01

    Microcrystalline cellulose (MCC) is an important research area in material and polymer science because of their particular size and structure,and the abundant,renewable,biodegradable and biocompatible cellulose matrix.Acid hydrolysis and enzymatic hydrolysis are the main methods for preparing MCC.Besides the wide applications in traditional industries,MCC has important applications in the areas of reinforced composite,biomedicine,photoelectric science,etc.Finally,the future development of MCC is prospected.%微晶纤维素具有独特的尺寸结构,其基质纤维素丰富价廉、可再生降解并具有良好的生物相容性,是天然高分子材料的重要分支.微晶纤维素的制备方法主要有酸水解法和酶解法;微晶纤维素除在传统行业有广泛应用外,还在增强复合、生物医学和光电科学等新兴领域有重要应用.最后对微晶纤维素的未来发展进行了展望和期待.

  1. Melt-processed poly(vinyl alcohol) composites filled with microcrystalline cellulose from waste cotton fabrics.

    Science.gov (United States)

    Sun, Xunwen; Lu, Canhui; Liu, Yong; Zhang, Wei; Zhang, Xinxing

    2014-01-30

    Waste cotton fabrics (WCFs), which are generated in a large volume from the textile industry, have caused serious disposal problem. Recycling WCFs into value-added products is one of the vital measures for both environmental and economic benefits. In this study, microcrystalline cellulose (MCC) was prepared by acid hydrolysis of WCFs, and used as reinforcement for melt-processed poly(vinyl alcohol) (PVA) with water and formamide as plasticizer. The microstructure and mechanical properties of the melt-processed PVA/MCC composites were characterized by Fourier transform infrared spectra, Raman spectra, differential scanning calorimetry, thermal gravimetric analysis, X-ray diffraction, tensile tests and dynamic mechanical analysis. The results indicated that MCC could establish strong interfacial interaction with PVA through hydrogen bonding. As a result, the crystallization of PVA was confined and its melting temperature was decreased, which was beneficial for the melt-processing of PVA. Compared with the unfilled PVA, the PVA/MCC composites exhibited remarkable improvement in modulus and tensile strength.

  2. Impact of microcrystalline cellulose material attributes: a case study on continuous twin screw granulation.

    Science.gov (United States)

    Fonteyne, Margot; Correia, Ana; De Plecker, Sofie; Vercruysse, Jurgen; Ilić, Ilija; Zhou, Qi; Vervaet, Chris; Remon, Jean Paul; Onofre, Fernanda; Bulone, Vincent; De Beer, Thomas

    2015-01-30

    The International Conference on Harmonisation (ICH) states in its Q8 'Pharmaceutical Development' guideline that the manufacturer of pharmaceuticals should have an enhanced knowledge of the product performance over a range of material attributes, manufacturing process options and process parameters. The present case study evaluates the effect of unspecified variability of raw material properties upon the quality attributes of granules; produced using a continuous from-powder-to-tablet wet granulation line (ConsiGma™ 25). The impact of different material attributes of six samples of microcrystalline cellulose (MCC) was investigated. During a blind study the different samples of MCC were used separately and the resulting granules were evaluated in order to identify the differences between the six samples. Variation in size distribution due to varying water binding capacity of the MCC samples was observed. The cause of this different water binding capacity was investigated and was caused by a different degree of crystallinity. Afterwards, an experimental design was conducted in order to evaluate the effect of both product and process variability upon the granule size distribution. This model was used in order to calculate the required process parameters to obtain a preset granule size distribution regardless of the type of MCC used. The difference in water binding capacity and its effect on granular properties was still present when combining the MCC grades with different binders. Copyright © 2014 Elsevier B.V. All rights reserved.

  3. Supercritical water treatment for cello-oligosaccharide production from microcrystalline cellulose.

    Science.gov (United States)

    Tolonen, Lasse K; Juvonen, Minna; Niemelä, Klaus; Mikkelson, Atte; Tenkanen, Maija; Sixta, Herbert

    2015-01-12

    Microcrystalline cellulose was treated in supercritical water at 380 °C and at a pressure of 250 bar for 0.2, 0.4, and 0.6s. The yield of the ambient-water-insoluble precipitate and its average molar mass decreased with an extended treatment time. The highest yield of 42 wt% for DP2-9 cello-oligosaccharides was achieved after the 0.4s treatment. The reaction products included also 11 wt% ambient-water-insoluble precipitate with a DP(w) of 16, and 6.1 wt% monomeric sugars, and 37 wt% unidentified degradation products. Oligo- and monosaccharide-derived dehydration and retro-aldol fragmentation products were analyzed via a combination of HPAEC-PAD-MS, ESI-MS/MS, and GC-MS techniques. The total amount of degradation products increased with treatment time, and fragmented (glucosyl(n)-erythrose, glucosyl(n)-glycolaldehyde), and dehydrated (glucosyl(n)-levoglucosan) were identified as the main oligomeric degradation products from the cello-oligosaccharides.

  4. Processing pharmaceutical grade microcrystalline cellulose from groundnut husk: Extraction methods and characterization

    Directory of Open Access Journals (Sweden)

    Ohwoavworhua Frank

    2009-01-01

    Full Text Available Microcrystalline cellulose (MCC is an important ingredient in pharmaceutical, food, cosmetic and other industries. In this work, MCC was prepared from the alpha cellulose content of groundnut husk, a renewable natural resource that has no industrial utilization yet. The effects of pulping methods (sodium hydroxide and multistage pulping and varying bleaching time on yield and amorphous properties of obtained alpha cellulose were examined. The prepared MCC (groundnut husk-MCC was characterized using scanning electron microscopy (SEM, infrared spectroscopy (FTIR, X-ray powder diffractometer (X-RPD, differential scanning calorimetry (DSC and compared with commercial-grade MCC. The results showed that complete pulping was achieved only by the use of the multistage pulping method and its yield was 15%. It was also found that the duration of bleaching affected the polymeric form of the processed alpha cellulose and hence, it is suggested that X-ray diffraction analysis should form an in-process check in the production of cellulose to ensure batch-to-batch consistency and performance. It was concluded that GH-MCC compared favourably with the commercial-grade MCC as well as conform to official specifications for MCC in the British Pharmacopoeia.

  5. Small-angle x-ray scattering study on the structure of microcrystalline and nanofibrillated cellulose

    Energy Technology Data Exchange (ETDEWEB)

    Leppaenen, Kirsi; Pirkkalainen, Kari; Penttilae, Paavo; Serimaa, Ritva [Division of Materials Physics, Department of Physics, P.O.B. 64, FI-00014 University of Helsinki (Finland); Sievaenen, Jenni [VTT, Espoo (Finland); Kotelnikova, Nina, E-mail: kirsi.leppanen@helsinki.f [Institute of Macromolecular Compounds, Russian Academy of Sciences, Bolshoy pr. 31, St. Petersburg 199004 (Russian Federation)

    2010-10-01

    The effects of different solvents on the structure of microcrystalline and nanofibrillated cellulose (MCC, NFC) were studied using small-angle x-ray scattering (SAXS). MCC was immersed in water, ethanol, and acetone, and NFC was immersed only in water and ethanol, but studied also in the form of foam-like water-NFC-gel in wet, air-dried and re-wet states. The solvent affected the average chord length, which reveals the typical length scale of the structure of the sample: 2.4 {+-} 0.1 nm was obtained for MCC-water, 2.5 {+-} 0.1 nm for re-wet NFC-gel, 1.6 {+-} 0.1 nm for MCC-ethanol, 1.2 {+-} 0.1 nm for NFC-ethanol, and 1.3 {+-} 0.1 nm for MCC-acetone. The specific surface of cellulose increased strongly when MCC and NFC were immersed in the solvents compared to dry cellulose. The specific surface of cellulose was determined to be larger for NFC-water than MCC-water, and slightly larger for dry NFC powder than for dry MCC, which can be explained by the fact that the width of cellulose crystallites perpendicular to the cellulose chain direction was slightly larger in MCC than in NFC on the basis of wide-angle x-ray scattering results.

  6. Effect of Mild Acid Hydrolysis Parameters on Properties of Microcrystalline Cellulose

    Directory of Open Access Journals (Sweden)

    Kari Mikael Vanhatalo

    2014-06-01

    Full Text Available The effects of mild kraft pulp hydrolysis conditions (reaction time, temperature, pulp consistency, and acid dosage with sulfuric acid (H2SO4 on the properties of microcrystalline cellulose (MCC were investigated. The degree of polymerization (DP of cellulose rapidly decreased at the initiation of hydrolysis and leveled off after a certain reaction time, depending on the hydrolysis conditions. The intensity of the hydrolysis treatment greatly affected the cellulose particle size. Compared to the intensive treatment, the mild conditions resulted in a broader particle size distribution, while smaller particles with a narrow size distribution were obtained under severe conditions. However, the particle size leveled off at a hydrolysis factor (P-factor of 300. The results suggest that after a certain P-factor (300, severe hydrolysis conditions have no advantage over mild ones as related to the MCC particle properties. Because of favourable reaction conditions (short delay time, moderate temperature, and small amounts of chemicals, this method can be implemented on an industrial scale in a chemical pulp mill.

  7. Performance characterization of thin-film-silicon based solar modules under clouded and clear sky conditions in comparison to crystalline silicon modules

    Science.gov (United States)

    Weicht, J. A.; Rasch, R.; Behrens, G.; Hamelmann, F. U.

    2016-07-01

    For a precise prediction of the energy yield of amorphous ( a-Si) and amorphous-microcrystalline tandem ( a-Si/ μc-Si) thinfilm-silicon photovoltaic (PV) modules it is important to know their performance ratio under different light conditions. The efficiency of solar modules is an important value for the monitoring and planning of PV-systems. The efficiency of a-Si solar modules shows no significant changes in the performance ratio at clouded or clear sky conditions. The efficiency of crystalline silicon-based ( c-Si) and a-Si/ μc-Si solar modules shows a lower efficiency for fully clouded conditions without direct irradiation compared to conditions with direct irradiation (clear sky). [Figure not available: see fulltext.

  8. Silicon on glass grown from indium and tin solutions

    Science.gov (United States)

    Bansen, Roman; Ehlers, Christian; Teubner, Thomas; Böttcher, Klaus; Gambaryan, Karen; Schmidtbauer, Jan; Boeck, Torsten

    2016-04-01

    A two-step process is used to grow crystalline silicon (c-Si) on glass at low temperatures. In the first step, nanocrystalline seed layers are formed at temperatures in the range of 230 to 400°C by either metal-induced crystallization or by direct deposition on heated substrates. In the second step, c-Si is grown on the seed layer by steady-state liquid phase epitaxy at a temperature range of 580 to 710°C. Microcrystalline Si layers with grain sizes of up to several tens of micrometers are grown from In and Sn solutions. Three-dimensional simulations of heat and convective flow in the crucible have been conducted and give valuable insights into the growth process. The experimental results are promising with regard to the designated use of the material in photovoltaics.

  9. A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors.

    Science.gov (United States)

    Ha, Tae-Jun; Cho, Won-Ju; Chung, Hong-Bay; Koo, Sang-Mo

    2015-09-01

    We investigate photo-induced instability in thin-film transistors (TFTs) consisting of amorphous indium-gallium-zinc-oxide (a-IGZO) as active semiconducting layers by comparing with hydrogenated amorphous silicon (a-Si:H). An a-IGZO TFT exhibits a large hysteresis window in the illuminated measuring condition but no hysteresis window in the dark condition. On the contrary, a large hysteresis window measured in the dark condition in a-Si:H was not observed in the illuminated condition. Even though such materials possess the structure of amorphous phase, optical responses or photo instability in TFTs looks different from each other. Photo-induced hysteresis results from initially trapped charges at the interface between semiconductor and dielectric films or in the gate dielectric which possess absorption energy to interact with deep trap-states and affect the movement of Fermi energy level. In order to support our claim, we also perform CV characteristics in photo-induced hysteresis and demonstrate thermal-activated hysteresis. We believe that this work can provide important information to understand different material systems for optical engineering which includes charge transport and band transition.

  10. [Quality by design based high shear wet granulation process development for the microcrystalline cellulose].

    Science.gov (United States)

    Luo, Gan; Xu, Bing; Sun, Fei; Cui, Xiang-long; Shi, Xin-yuan; Qiao, Yan-jiang

    2015-03-01

    The design space of the high shear wet granulation process was established and validated within the framework of quality by design (QbD). The system of microcrystalline cellulose-de-ioned water was used in this study. The median granule size and bulk density of granules were identified as critical quality attributes. Plackeet-Burmann experimental design was used to screen these factors as follows: dry mixing time, the impeller and chopper speed of dry mixing, water amount, water addition time, wet massing time, the impeller and chopper speed of wet massing and drying time. And the optimization was implemented with the central composite experimental design based on screened critical process parameters. The design space of the high shear wet granulation process was established based on the quadratic polynomial regression model. Since the P-values of both models were less than 0.05 and values of lack of fit were more than 0.1, the relationship between critical quality attributes and critical process parameters could be well described by the two models. The reliability of design space, illustrated by overlay plot, was improved with the addition of 95% confidence interval. For those granules whose process parameters were in the design space, the granule size could be controlled within 250 to 355 μm, and the bulk density could be controlled within a range of 0.4 to 0.6 g x cm(-3). The robustness and flexibility of the high shear wet granulation process have been enhanced via the establishment of the design space based on the QbD concept.

  11. Effect of phosphoric acid pretreatment on enzymatic hydrolysis of microcrystalline cellulose.

    Science.gov (United States)

    Zhang, Juanhua; Zhang, Beixiao; Zhang, Jingqiang; Lin, Lu; Liu, Shijie; Ouyang, Pingkai

    2010-01-01

    Microcrystalline cellulose (MCC) was pretreated with phosphoric acid at 323K for 10h. X-ray diffraction (XRD) and Atomic Force Microscope (AFM) analyses revealed that the fiber surface morphology of pretreated MCC (P-MCC) were uneven and rough with the crystalline diffraction peaks of P-MCC decreased to a distinct range. The X-ray Photoelectron Spectroscopy (XPS) analysis showed that the uneven and rough surface of P-MCC could enhance the adsorption of cellulose to the molecular surface of cellulose, which is one of the key factors affecting enzymatic hydrolysis of cellulose. A reversible first order kinetics was employed to describe the adsorption kinetics of cellulase to MCC and P-MCC, and the adsorption rate constants of MCC and P-MCC were found to be 0.016, 0.024, 0.041, and 0.095, 0.149, 0.218min(-1), respectively at 278K, 293K and 308K. The activation energies of MCC and P-MCC hydrolysis reactions were found to be 22.257 and 19.721kJ mol(-1). The major hydrolysis products of MCC and P-MCC were cellobiose and glucose. Hydrolysis of MCC for 120h resulted in yields of glucose (7.21%), cellobiose (13.16%) and total sugars (20.37%). However, after the pretreatment with phosphoric acid, the corresponding sugar yields resulted from enzymatic hydrolysis of P-MCC were increased to 24.10%, 41.42%, and 65.52%; respectively, which were 3.34, 3.15, and 3.22 times of the sugars yields from enzymatic hydrolysis of MCC. Copyright 2010 Elsevier Inc. All rights reserved.

  12. Silicon Light: a European FP7 project aiming at high efficiency thin film silicon solar cells on foil. Monolithic series interconnection of flexible thin-film PV devices

    Energy Technology Data Exchange (ETDEWEB)

    Soppe, W. [ECN Solar Energy, P.O. Box 1, 1755 ZG Petten (Netherlands); Haug, F.J. [Ecole Polytechnique Federale de Lausanne EPFL, Photovoltaics and Thin Film Electronics Laboratory, Rue A.-L. Breguet 2, 2000 Neuchatel (Switzerland); Couty, P. [VHFTechnologies SA, Rue Edouard-Verdan 2, CH-1400 Yverdon-les-Bains (Switzerland); Duchamp, M. [Technical University of Denmark, Center for Electron Nanoscopy, DK-2800 Kongens Lyngby (Denmark); Schipper, W. [Nanoptics GmbH, Innungstr.5, 21244 Buchholz (Germany); Krc, J. [University of Ljubljana, Faculty of Electrical Engineering, Trzaska 25, SI-1000 Ljubljana (Slovenia); Sanchez, G. [Universidad Politecnica de Valencia, I.U.I. Centro de Tecnologia Nanofotonica, 46022 Valencia (Spain); Leitner, K. [Umicore Thin Film Products AG, Balzers (Liechtenstein); Wang, Q. [Shanghai Jiaotong University, Research Institute of Micro/Nanometer Science and Technology, 800 Dongchuan Road, Min Hang, 200240 Shanghai (China)

    2011-09-15

    Silicon-Light is a European FP7 project, which started January 1st, 2010 and aims at development of low cost, high-efficiency thin film silicon solar cells on foil. Three main routes are explored to achieve these goals: (a) advanced light trapping by implementing nanotexturization through UV Nano Imprinting Lithography (UV-NIL); (b) growth of crack-free silicon absorber layers on highly textured substrates; (c) development of new TCOs which should combine the best properties of presently available materials like ITO and AZO. The paper presents the midterm status of the project results, showing model calculations of ideal nanotextures for light trapping in thin film silicon solar cells; the fabrication of masters and the replication and roll-to-roll fabrication of these nanotextures. Further, results on ITO variants with improved work function are presented. Finally, the status of cell fabrication on foils with nanotexture is shown. Microcrystalline and amorphous silicon single junction cells with stable efficiencies with more than 8% have been made, paving the way towards a-Si/{mu}c-Si tandem cells with more than 11% efficiency.

  13. 芦笋皮微晶纤维素的制备%Preparation of microcrystalline cellulose from asparagus peel

    Institute of Scientific and Technical Information of China (English)

    宋美玲

    2012-01-01

    以芦笋皮为原料,酶法制得膳食纤维后,采用盐酸水解,以溶胀性为指标确定制备微晶纤维素的工艺条件,为芦笋皮的加工利用提供一个新的途径。试验结果表明:在75℃下,盐酸浓度4 mol/L,料酸比1g∶5 mL,酸解时间5 h,制备出的微晶纤维素溶胀性可达6.90 mL/g,比芦笋皮中膳食纤维的溶胀性(4.80 mL/g)高2.10 mL/g。%Using asparagus as raw materials,microcrystalline cellulose was prepared in the best experimental conditions,determined by hydrochloric acid in different acidolysis time,acid concentration and proportion of material to acid,which took swelling as an index.And the best experimental conditions for preparation of microcrystalline cellulose provides a new way to process the asparagus.The results show that the best preparation conditions were the concentration of hydrochloric acid 4 mol/L,the proportion of material to acid 1∶5,acidolysis time 5 h,at 75 ℃.In the above conditions,the swelling of microcrystalline cellulose can be up to 6.90 mL/g,which is 2.10 mL/g more than the swelling(4.80 mL/g)of dietary fiber from the asparagus peel.

  14. The effect of pulping concentration treatment on the properties of microcrystalline cellulose powder obtained from waste paper.

    Science.gov (United States)

    Okwonna, Okumneme O

    2013-10-15

    Microcrystalline cellulose (MCC) powder was isolated from three grades of waste paper: book, Groundwood/Newsprint and paperboard, through the processes of pulping and hydrolysis. Pulping treatment on these grades of waste paper was done using varying concentrations of caustic soda. Effects of the concentration of the pulping medium on the thermal and kinetic properties were investigated. Also determined were the effects of this on the physico-chemical properties. The chemical structure was characterized using an infrared spectroscopy (FTIR). Results showed these properties to be affected by the concentration of the pulping medium. Copyright © 2013 Elsevier Ltd. All rights reserved.

  15. Laser annealing study of PECVD deposited hydrogenated amorphous silicon carbon alloy films

    Science.gov (United States)

    Coscia, U.; Ambrosone, G.; Gesuele, F.; Grossi, V.; Parisi, V.; Schutzmann, S.; Basa, D. K.

    2007-12-01

    The influence of carbon content on the crystallization process has been investigated for the excimer laser annealed hydrogenated amorphous silicon carbon alloy films deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) technique, using silane methane gas mixture diluted in helium, as well as for the hydrogenated microcrystalline silicon carbon alloy films prepared by PECVD from silane methane gas mixture highly diluted in hydrogen, for comparison. The study demonstrates clearly that the increase in the carbon content prevents the crystallization process in the hydrogen diluted samples while the crystallization process is enhanced in the laser annealing of amorphous samples because of the increase in the absorbed laser energy density that occurs for the amorphous films with the higher carbon content. This, in turn, facilitates the crystallization for the laser annealed samples with higher carbon content, resulting in the formation of SiC crystallites along with Si crystallites.

  16. Microcrystalline hexagonal tungsten bronze. 1. Basis of ion exchange selectivity for cesium and strontium.

    Science.gov (United States)

    Griffith, Christopher S; Luca, Vittorio; Hanna, John V; Pike, Kevin J; Smith, Mark E; Thorogood, Gordon S

    2009-07-06

    The structural basis of selectivity for cesium and strontium of microcrystalline hexagonal tungsten bronze (HTB) phase Na(x)WO(3+x/2).zH(2)O has been studied using X-ray and neutron diffraction techniques, 1D and 2D (23)Na magic angle spinning (MAS) nuclear magnetic resonance (NMR) spectroscopy, and radiochemical ion exchange investigations. For the HTB system, this study has shown that scattering techniques alone provide an incomplete description of the disorder and rapid exchange of water (with tunnel cations) occurring in this system. However, 1D and 2D (23)Na MAS NMR has identified three sodium species within the HTB tunnels-species A, which is located at the center of the hexagonal window and is devoid of coordinated water, and species B and C, which are the di- and monohydrated variants, respectively, of species A. Although species B accords with the traditional crystallographic model of the HTB phase, this work is the first to propose and identify the anhydrous species A and monohydrate species C. The population (total) of species B and C decreases in comparison to that of species A with increasing exchange of either cesium or strontium; that is, species B and C appear more exchangeable than species A. Moreover, a significant proportion of tunnel water is redistributed by these cations. Multiple ion exchange investigations with radiotracers (137)Cs and (85)Sr have shown that for strontium there is a definite advantage in ensuring that any easily exchanged sodium is removed from the HTB tunnels prior to exchange. The decrease in selectivity (wrt cesium) is most probably due to the slightly smaller effective size of Sr(2+); namely, it is less of a good fit for the hexagonal window, ion exchange site. The selectivity of the HTB framework for cesium has been shown unequivocally to be defined by the structure of the hexagonal window, ion exchange site. Compromising the geometry of this window even in the slightest way by either (1) varying the cell volume through

  17. Grating-assisted coupling to nanophotonic circuits in microcrystalline diamond thin films

    Directory of Open Access Journals (Sweden)

    Patrik Rath

    2013-05-01

    Full Text Available Synthetic diamond films can be prepared on a waferscale by using chemical vapour deposition (CVD on suitable substrates such as silicon or silicon dioxide. While such films find a wealth of applications in thermal management, in X-ray and terahertz window design, and in gyrotron tubes and microwave transmission lines, their use for nanoscale optical components remains largely unexplored. Here we demonstrate that CVD diamond provides a high-quality template for realizing nanophotonic integrated optical circuits. Using efficient grating coupling devices prepared from partially etched diamond thin films, we investigate millimetre-sized optical circuits and achieve single-mode waveguiding at telecoms wavelengths. Our results pave the way towards broadband optical applications for sensing in harsh environments and visible photonic devices.

  18. Influence of alkaline hydrogen peroxide pre-hydrolysis on the isolation of microcrystalline cellulose from oil palm fronds.

    Science.gov (United States)

    Owolabi, Abdulwahab F; Haafiz, M K Mohamad; Hossain, Md Sohrab; Hussin, M Hazwan; Fazita, M R Nurul

    2017-02-01

    In the present study, microcrystalline cellulose (MCC) was isolated from oil palm fronds (OPF) using chemo-mechanical process. Wherein, alkaline hydrogen peroxide (AHP) was utilized to extract OPF fibre at different AHP concentrations. The OPF pulp fibre was then bleached with acidified sodium chlorite solution followed by the acid hydrolysis using hydrochloric acid. Several analytical methods were conducted to determine the influence of AHP concentration on thermal properties, morphological properties, microscopic and crystalline behaviour of isolated MCC. Results showed that the MCC extracted from OPF fibres had fibre diameters of 7.55-9.11nm. X-ray diffraction (XRD) analyses revealed that the obtained microcrystalline fibre had both celluloses I and cellulose II polymorphs structure, depending on the AHP concentrations. The Fourier transmission infrared (FTIR) analyses showed that the AHP pre-hydrolysis was successfully removed hemicelluloses and lignin from the OPF fibre. The crystallinity of the MCC was increased with the AHP concentrations. The degradation temperature of MCC was about 300°C. The finding of the present study showed that pre-treatment process potentially influenced the quality of the isolation of MCC from oil palm fronds. Copyright © 2016 Elsevier B.V. All rights reserved.

  19. Production of Starch Based Bioplastic from Cassava Peel Reinforced with Microcrystalline Celllulose Avicel PH101 Using Sorbitol as Plasticizer

    Science.gov (United States)

    Maulida; Siagian, M.; Tarigan, P.

    2016-04-01

    The production of starch based bioplastics from cassava peel reeinforced with microcrystalline cellulose using sorbitol as plasticizer were investigated. Physical properties of bioplastics were determined by density, water uptake, tensile strength and Fourier Transform Infrared Spectroscopy. Bioplastics were prepared from cassava peel starch plasticized using sorbitol with variation of 20; 25; 30% (wt/v of sorbitol to starch) reinforced with microcrystalline celllulose (MCC) Avicel PH101 fillers with range of 0 to 6% (wt/wt of MCC to starch). The results showed improvement in tensile strength with higher MCC content up to 9, 12 mpa compared to non-reinforced bioplastics. This could be mainly attributed to the strong hydrogen bonds between MCC and starch. On the contrary, the addition of MCC decreased the elongation at break, density and water uptake. Fourier Transform Infrared Spectroscopy showed the functional groups of bioplastics, which the majority of O-H groups were found at the bioplastics with reinforcing filler MCC that represented substantial hydrogen bonds. The highest tensile strength value was obtained for bioplastic with MCC content 6% and sorbitol content 20%. With good adhesion between MCC and starch the production of bioplastics could be widely used as a substitute for conventional plastics with more benefits to the environment.

  20. Photophysical Studies of a New Water Soluble Indocarbocyanine Dye Adsorbed onto Microcrystalline Cellulose and b-Cyclodextrin

    Directory of Open Access Journals (Sweden)

    Luis F. Vieira Ferreira

    2013-05-01

    Full Text Available A water-soluble indocarbocyanine dye was synthesized and its photophysics were studied for the first time on two solid hosts, microcrystalline cellulose and b-cyclodextrin, as well as in homogeneous media. The inclusion of the indocarbocyanine moiety onto microcrystalline cellulose increased the dye aggregation with both H and J aggregates being formed. Adsorption on b-cyclodextrin enhanced aggregation in a similar way. The fluorescence quantum yields were determined for the powdered samples of the cyanine dye on the two hosts and a significant increase was observed relative to homogeneous solution. A remarkable concentration dependence was also detected in both cases. A lifetime distribution analysis has shown that the indocarbocyanine dye mainly occupies the amorphous part of cellulose and is not entrapped in the crystalline part of this host. In the b-CD case, the adsorption occurs outside the host cavity. In both hosts a strong concentration quenching effect is observed and only monomers emit. Both adsorptions may be explained by stereochemical constraints imposed by the two long sulphoethyl tails linked to nitrogen atoms of the indocarbocyanine dye.

  1. AFM and FTIR characterization of microcrystalline Si obtained from isothermal annealing of Al/a-Si:H

    Energy Technology Data Exchange (ETDEWEB)

    Rojas-Lopez, M.; Orduna-Diaz, A.; Delgado-Macuil, R. [Centro de Investigacion en Biotecnologia Aplicada (CIBA), IPN, Tlaxcala, Tlax. 72197 (Mexico); Olvera-Hernandez, J. [Centro de Investigacion en Dispositivos Semiconductores (CIDS), BUAP, Puebla, Pue. 72570 (Mexico); Navarro-Contreras, H.; Vidal, M.A.; Saucedo, N.; Mendez-Garcia, V.H. [Instituto de Investigacion en Comunicacion Optica (IICO), UASLP, San Luis Potosi, S.L.P. 78100 (Mexico)

    2007-04-15

    Atomic force microscopy and Fourier transform infrared spectroscopy were used to investigate the morphology of the microcrystalline surface, and also the amorphous-crystalline structural transformation of a-Si:H films, isothermally annealed during several hours. Crystallization process was strongly influenced by the deposition of an Al layer on the surface of a-Si:H samples. Representative AFM images show the presence of grains, which increase in diameter with the annealing time. Relative crystallized fraction as a function of the annealing time can be described adequately by using the Avrami equation. The kinetic of this crystallization process suggest a two-dimensional growth of the Si nuclei. Fourier transform infrared measurements show the presence of an intense band near 512 cm{sup -1} associated to Si-Si bonding. We observed the relative diminishing of the intensity of the Si-H wagging mode at 694 cm{sup -1} with annealing time, suggesting effusion of hydrogen to the surface of microcrystalline films. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Diagenetic Microcrystalline Opal Varieties from the Monterey Formation, CA: HRTEM Study of Structures and Phase Transformation Mechanisms

    Science.gov (United States)

    Cady, Sherry L.; Wenk, H.-R.; DeVincenzi, Don (Technical Monitor)

    1994-01-01

    Microcrystalline opal varieties form as intermediary precipitates during the diagenetic transformation of biogenically precipitated non-crystalline opal (opal-A) to microquartz. With regard to the Monterey Formation of California, X-ray powder diffraction studies have shown that a decrease in the primary d-spacing of opal-CT toward that of cristobalite occurs with increasing diagenesis. The initial timing of opal-CT/quartz formation and the value of the primary opal-CT d-spacing, are influenced by the sediment. lithology. Transmission electron microscopy methods (CTEM/HRTEM) were used to investigate the structure of the diagenetic phases and establish transformation mechanisms between the varieties of microcrystalline opals in charts and porcelanites from the Monterey Formation. HRTEM images revealed that the most common fibrous varieties of microcrystalline opals contain varying amounts of structural disorder. Finite lamellar units of cristobalite-and tridymite-type. layer sequences were found to be randomly stacked in a direction perpendicular to the fiber axis. Disordered and ordered fibers were found to have coprecipitated within the same radial fiber bundles that formed within the matrix of the Most siliceous samples. HRTEM images, which reveal that the fibers within radial and lepispheric fiber bundles branch non-crystallographically, support an earlier proposal that microspheres in chert grow via a spherulitic growth mechanism. A less common variety of opal-CT was found to be characterized by non-parallel (low-angle) stacking sequences that often contain twinned lamellae. Tabular-shaped crystals of orthorhombic tridymite (PO-2) were also identified in the porcelanite samples. A shift in the primary d-spacing of opal-CT has been interpreted as an indication of solid-state ordering g toward a predominantly cristobalite structure, (opal-C). Domains of opal-C were identified as topotactically-oriented overgrowths on discrete Sections of opal-CT fibers and as

  3. Influence of substrate microcrystallinity on the orientation of laser-induced periodic surface structures

    Energy Technology Data Exchange (ETDEWEB)

    Nürnberger, P.; Reinhardt, H.; Kim, H-C.; Yang, F. [Department of Chemistry, Philipps-University Marburg, Hans-Meerwein-Straße 4, 35032 Marburg (Germany); Peppler, K.; Janek, J. [Department of Physical-Chemistry, Justus-Liebig-University Gießen, Heinrich-Buff-Ring 58, 35392 Gießen (Germany); Hampp, N. [Department of Chemistry, Philipps-University Marburg, Hans-Meerwein-Straße 4, 35032 Marburg (Germany); Materials Science Center, 35032 Marburg (Germany)

    2015-10-07

    The research in this paper deals with the angular dependence of the formation of laser-induced periodic surface structures (LIPSS) by linearly polarized nanosecond laser pulses on polycrystalline austenitic stainless steel. Incident angles ranging from 45° to 70° lead to the generation of superimposed merely perpendicular oriented LIPSS on steel as well as on monocrystalline (100) silicon which was used as a reference material. Additional extraordinary orientations of superimposing LIPSS along with significantly different periodicities are found on polycrystalline steel but not on (100) silicon. Electron backscatter diffraction measurements indicate that the expansion of these LIPSS is limited to the grain size and affected by the crystal orientation of the individual grains. Atomic force microscopy imaging shows that LIPSS fringe heights are in good agreement with the theoretically predicted penetration depths of surface plasmon polaritons into stainless steel. These results indicate that optical anisotropies must be taken into account to fully describe the theory of light-matter interaction leading to LIPSS formation.

  4. Influence of substrate microcrystallinity on the orientation of laser-induced periodic surface structures

    Science.gov (United States)

    Nürnberger, P.; Reinhardt, H.; Kim, H.-C.; Yang, F.; Peppler, K.; Janek, J.; Hampp, N.

    2015-10-01

    The research in this paper deals with the angular dependence of the formation of laser-induced periodic surface structures (LIPSS) by linearly polarized nanosecond laser pulses on polycrystalline austenitic stainless steel. Incident angles ranging from 45° to 70° lead to the generation of superimposed merely perpendicular oriented LIPSS on steel as well as on monocrystalline (100) silicon which was used as a reference material. Additional extraordinary orientations of superimposing LIPSS along with significantly different periodicities are found on polycrystalline steel but not on (100) silicon. Electron backscatter diffraction measurements indicate that the expansion of these LIPSS is limited to the grain size and affected by the crystal orientation of the individual grains. Atomic force microscopy imaging shows that LIPSS fringe heights are in good agreement with the theoretically predicted penetration depths of surface plasmon polaritons into stainless steel. These results indicate that optical anisotropies must be taken into account to fully describe the theory of light-matter interaction leading to LIPSS formation.

  5. Doping Silicon Wafers with Boron by Use of Silicon Paste

    Institute of Scientific and Technical Information of China (English)

    Yu Gao; Shu Zhou; Yunfan Zhang; Chen Dong; Xiaodong Pi; Deren Yang

    2013-01-01

    In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon.Boron-doped silicon nanoparticles are synthesized by a plasma approach.They are then dispersed in solvents to form silicon paste.Silicon paste is screen-printed at the surface of silicon wafers.By annealing,boron atoms in silicon paste diffuse into silicon wafers.Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles.The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy (SIMS) and sheet resistance measurements.

  6. Fractal analysis of SEM images and mercury intrusion porosimetry data for the microstructural characterization of microcrystalline cellulose-based pellets

    Energy Technology Data Exchange (ETDEWEB)

    Gomez-Carracedo, A.; Alvarez-Lorenzo, C.; Coca, R.; Martinez-Pacheco, R.; Concheiro, A. [Departamento de Farmacia y Tecnologia Farmaceutica, Universidad de Santiago de Compostela, Santiago de Compostela 15782 (Spain); Gomez-Amoza, J.L. [Departamento de Farmacia y Tecnologia Farmaceutica, Universidad de Santiago de Compostela, Santiago de Compostela 15782 (Spain)], E-mail: joseluis.gomez.amoza@usc.es

    2009-01-15

    The microstructure of theophylline pellets prepared from microcrystalline cellulose, carbopol and dicalcium phosphate dihydrate, according to a mixture design, was characterized using textural analysis of gray-level scanning electron microscopy (SEM) images and thermodynamic analysis of the cumulative pore volume distribution obtained by mercury intrusion porosimetry. Surface roughness evaluated in terms of gray-level non-uniformity and fractal dimension of pellet surface depended on agglomeration phenomena during extrusion/spheronization. Pores at the surface, mainly 1-15 {mu}m in diameter, determined both the mechanism and the rate of theophylline release, and a strong negative correlation between the fractal geometry and the b parameter of the Weibull function was found for pellets containing >60% carbopol. Theophylline mean dissolution time from these pellets was about two to four times greater. Textural analysis of SEM micrographs and fractal analysis of mercury intrusion data are complementary techniques that enable complete characterization of multiparticulate drug dosage forms.

  7. Preliminary viability studies of fibroblastic cells cultured on microcrystalline and nanocrystalline diamonds produced by chemical vapour deposition method

    Directory of Open Access Journals (Sweden)

    Ana Amélia Rodrigues

    2012-01-01

    Full Text Available Implant materials used in orthopedics surgery have demonstrated some disadvantages, such as metallic corrosion processes, generation of wear particles, inflammation reactions and bone reabsorption in the implant region. The diamond produced through hot-filament chemical vapour deposition method is a new potential biomedical material due to its chemical inertness, extreme hardness and low coefficient of friction. In the present study we analysis two samples: the microcrystalline diamond and the nanocrystalline diamond. The aim of this study was to evaluate the surface properties of the diamond samples by scanning electron microscopy, Raman spectroscopy and atomic force microscopy. Cell viability and morphology were assessed using thiazolyl blue tetrazolium bromide, cytochemical assay and scanning electron microscopy, respectively. The results revealed that the two samples did not interfere in the cell viability, however the proliferation of fibroblasts cells observed was comparatively higher with the nanocrystalline diamond.

  8. Preliminary viability studies of fibroblastic cells cultured on microcrystalline and nanocrystalline diamonds produced by chemical vapour deposition method

    Directory of Open Access Journals (Sweden)

    Ana Amélia Rodrigues

    2013-02-01

    Full Text Available Implant materials used in orthopedics surgery have demonstrated some disadvantages, such as metallic corrosion processes, generation of wear particles, inflammation reactions and bone reabsorption in the implant region. The diamond produced through hot-filament chemical vapour deposition method is a new potential biomedical material due to its chemical inertness, extreme hardness and low coefficient of friction. In the present study we analysis two samples: the microcrystalline diamond and the nanocrystalline diamond. The aim of this study was to evaluate the surface properties of the diamond samples by scanning electron microscopy, Raman spectroscopy and atomic force microscopy. Cell viability and morphology were assessed using thiazolyl blue tetrazolium bromide, cytochemical assay and scanning electron microscopy, respectively. The results revealed that the two samples did not interfere in the cell viability, however the proliferation of fibroblasts cells observed was comparatively higher with the nanocrystalline diamond.

  9. MORPHOLOGY, IN VITRO - DEGRADATION AND DRUG RELEASE PROFILE OF POLY (ETHYLENE-CO-VINYL ACETATE / MICROCRYSTALLINE CELLULOSE ACETATE

    Directory of Open Access Journals (Sweden)

    K. Lakshmi Narayana

    2011-06-01

    Full Text Available Microcrystalline cellulose acetate (MCC was incorporated in poly (ethylene-co-vinyl acetate (EVA at different loading. The morphology, swelling properties and drug release profile were studied with respect to MCC loading to study its potential application as ocular inserts. The XRD patterns showed a good compatibility between the components. However swelling ratio and in-vitro degradation of EVA increase with MCC loading. This has been explained in terms of the hygroscopic nature of cellulose acetate. The study shows that EVA/MCC system can be tuned in terms of important parameters such as swelling behavior, in vitro release and degradation by varying blend composition, thus fulfilling specific biomedical requirements.

  10. Phase Transformation and Enhancing Electron Field Emission Properties in Microcrystalline Diamond Films Induced by Cu Ion Implantation and Rapid Annealing

    Institute of Scientific and Technical Information of China (English)

    Yan-Yan Shen; Yi-Xin Zhang; Ting Qi; Yu Qiao; Yu-Xin Jia; Hong-Jun Hei; Zhi-Yong He

    2016-01-01

    Cu ion implantation and subsequent rapid annealing at 500℃ in N2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm2 V-1 S-1 for microcrystalline diamond (MCD) films.Its electrical field emission behavior can be turned on at Eo =2.6 V/μm,attaining a current density of 19.5μA/cm2 at an applied field of 3.5 V/μm.Field emission scanning electron microscopy combined with Raman and x-ray photoelectron microscopy reveal that the formation of Cu nanoparticles in MCD films can catalytically convert the less conducting disorder/a-C phases into graphitic phases and can provoke the formation of nanographite in the films,forming conduction channels for electron transportation.

  11. 隐晶质石墨浮选的试验研究%Experimental Research on Flotation of Microcrystalline Graphite

    Institute of Scientific and Technical Information of China (English)

    吴柏君; 张国范; 欧乐明; 梁晓

    2015-01-01

    对湖南鲁塘地区隐晶质石墨进行选矿试验研究,确定了最佳的粗选条件,在此基础上,通过1粗3精的开路试验得到固定碳含量为85%和75%以上的两种产品,产品综合回收率为87.65%。%A beneficiation test of microcrystalline graphite ore from Lutang in Hunan was studied, the optimum roughing conditions are determined. On this basis, ifnally through lfotation process of one roughing-three cleanings get two products of ifxed carbon more than 85% and 75%, comprehensive recovery of products is 87.65%.

  12. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible luminescenc

  13. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  14. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    2001-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible luminescenc

  15. Exploration of melt granulation technique for the development of coprocessed directly compressible adjuvant containing lactose and microcrystalline cellulose.

    Science.gov (United States)

    Gohe, Mukesh C; Jogani, Pranav D

    2003-01-01

    The objective of the present investigation was to prepare and evaluate lactose and microcrystalline cellulose based, directly compressible adjuvant using melt granulation technique. The percentage of polymer blend (PVP K 30 and PEG 4000; 5, 10, or 15%) and the polymer blend ratio (9:1, 1:1, or 1:9) were selected as independent variables in a 3(2) full factorial design. The lactose and microcrystalline cellulose blend (3:1) was mixed with the meltable binder on a water bath at 90 degrees C. The agglomerates were cooled to 35 degrees C and subsequently passed through 30 mesh. A batch containing 12.5% of the polymer blend containing 1:9 ratio of PVP:PEG was used for further studies. In an another 3(2) full factorial design, disintegrant (crospovidone, croscarmellose sodium, or sodium starch glycolate) and mode of addition of disintegrant (intragranular, extragranular, or combination of intragranular and extragranular) were used as independent variables. The agglomerates were evaluated for percentage fines and Carr's index. Tablets were prepared on a single-punch tablet machine, and they were evaluated for tensile strength, friability, and disintegration time. Regression analysis was carried out to evolve full and refined models. Contour plots are presented for graphical expression of the results. The use of composite index is demonstrated for the selection of an appropriate batch. The disintegration time of tablets reduced from 18 min to 6 min when 6% crospovidone was included in the product. The optimized adjuvant was characterized for particle size distribution, granular friability, Kawakita's and Kuno's equation, and dilution potential study. Turmeric, glycyrrhiza, acetaminophen, and metformin HCl were used as model drugs for the preparation of tablets. The present study underlines the fact that melt granulation technique may be adopted for the development of multifunctional directly compressible adjuvant for use in pharmaceuticals. The advantages of melt

  16. A Comparison between Thin-Film Transistors Deposited by Hot-Wire Chemical Vapor Deposition and PECVD

    Directory of Open Access Journals (Sweden)

    Meysam Zarchi

    2015-03-01

    Full Text Available The effect of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H thin film transistors (TFTs has been studied. It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic stress in the a-Si:H layer. Amorphous and microcrystalline silicon films were deposited by radiofrequency plasma enhanced chemical vapor deposition (RF-PECVD and hot-wire chemical vapor deposition (HW-CVD at 100 ºC and 25 ºC. Structural properties of these films were measured by Raman Spectroscopy. Electronic properties were measured by dark conductivity, σd, and photoconductivity, σph. For amorphous silicon films deposited by RF-PECVD on PET, photosensitivity's of >105 were obtained at both 100 º C and 25 ºC. For amorphous silicon films deposited by HW-CVD, a photosensitivity of > 105 was obtained at 100 ºC. Microcrystalline silicon films deposited by HW-CVD at 95% hydrogen dilution show σph~ 10-4 Ω-1cm-1, while maintaining a photosensitivity of ~102 at both 100 ºC and 25 ºC. Microcrystalline silicon films with a large crystalline fraction (> 50% can be deposited by HW-CVD all the way down to room temperature.

  17. Crystalline silicon for thin film solar cells. Final report; Kristallines Silizium fuer Duennschichtsolarzellen. Schlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Wagner, H.

    2001-07-01

    Thin film solar cells based on silicon are of great interest for cost-effective conversion of solar energy into electric power. In order to reach this goal, intensive research is still necessary, pointing, e.g., to a further enhancement of the conversion efficiency, an improvement of stability and a reduction of the production time. Aim of the project work was the achievement of knowledge on microcrystalline silicon and its application in thin film solar cells by means of a broad research and development program. Material research focused on growth processes of the microcrystalline material, the incorporation and stability of hydrogen, the electronic transport and defects. In particular the transition from amorphous to microcrystalline material which is obtained for the present deposition methods by minor variations of the deposition parameters as well as the enhancement of the deposition rate were intensively studies. Another focus of research aimed toward the development and improvement of zinc oxide films which are of central importance for this type of solar cells for the application as transparent contacts. A comprehensive understanding was achieved. The films were incorporated in thin film solar cells and with conversion efficiencies >8% for single cells (at relatively high deposition rate) and 10% (stable) for tandem cells with amorphous silicon, top values were achieved by international standards. The project achievements serve as a base for a further development of this type of solar cell and for the transfer of this technology to industry. (orig.) [German] Duennschichtsolarzellen auf der Basis von Silizium sind von grossem Interesse fuer eine kostenguenstige Umwandlung von Sonnenenergie in elektrischen Strom. Um dieses Ziel zu erreichen, ist jedoch noch intensive Forschung, u.a. zur weiteren Steigerung des Wirkungsgrades, zur Verbesserung der Stabilitaet und zur Verkuerzung des Produktionsprozesses erforderlich. Ziel der Projektarbeiten war, durch ein

  18. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  19. Chemical Analysis Methods for Silicon Carbide

    Institute of Scientific and Technical Information of China (English)

    Shen Keyin

    2006-01-01

    @@ 1 General and Scope This Standard specifies the determination method of silicon dioxide, free silicon, free carbon, total carbon, silicon carbide, ferric sesquioxide in silicon carbide abrasive material.

  20. Glass-silicon column

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Conrad M.

    2003-12-30

    A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

  1. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Al-Jassim, M. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1995-08-01

    We have studied a novel extrinsic gettering method that utilizes the very large surface areas, produced by porous silicon etch on both front and back surfaces of the silicon wafer, as gettering sites. In this method, a simple and low-cost chemical etching is used to generate the porous silicon layers. Then, a high-flux solar furnace (HFSF) is used to provide high-temperature annealing and the required injection of silicon interstitials. The gettering sites, along with the gettered impurities, can be easily removed at the end the process. The porous silicon removal process consists of oxidizing the porous silicon near the end the gettering process followed by sample immersion in HF acid. Each porous silicon gettering process removes up to about 10 {mu}m of wafer thickness. This gettering process can be repeated so that the desired purity level is obtained.

  2. A study of ZnO:B films for thin film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yin, J.; Zhu, H.; Wang, Y.; Wang, Z.; Gao, J.; Mai, Y.; Ma, Y. [Baoding Tianwei Solarfilms Co., Ltd., 071051, Baoding (China); Wan, M. [Department of Chemistry and Material science, Hunan Institute of Humanities, Science and Technology, 417000, Loudi (China); Huang, Y., E-mail: y.huang@btw-solarfilms.com [Baoding Tianwei Solarfilms Co., Ltd., 071051, Baoding (China)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer ZnO:B films with different thicknesses were prepared with LPCVD technique. Black-Right-Pointing-Pointer The thicker ZnO:B back electrodes lead to higher FF but slightly lower J{sub sc.} Black-Right-Pointing-Pointer Back polyvinyl butyral (PVB) foils improves the utilization of incident light in solar cells. Black-Right-Pointing-Pointer The thicker ZnO:B front electrode films result in high J{sub sc} but lower FF. - Abstract: Boron doped zinc oxide (ZnO:B) films with different thicknesses were prepared with low pressure chemical vapor deposition (LPCVD) technique and implemented in thin film silicon solar cells as front and back electrodes. It is found that thick back ZnO:B film electrode in thin film silicon solar cells leads to a high fill factors (FF), which is attributed to an improvement of the electrical properties of the thick ZnO:B films, and in the meanwhile a slightly low short circuit currents (J{sub sc}) due to a high light absorption in the thick back ZnO:B films. Differently, the thicker front ZnO:B film electrodes result in a high J{sub sc} but a low FF of solar cells compared to the thinner ones. The low FF of the solar cells may be caused by the local shunt originated from the pinholes or by the cracks (zones of non-dense material) formed in particular in microcrystalline silicon materials deposited on rough front ZnO:B films. As to the high J{sub sc}, it is expected to be due to a good light trapping effect inside solar cells grown on rough front ZnO:B films. Moreover, the application of high reflective polyvinyl butyral (PVB) foils effectively enhances the utilization of incident light in solar cells. By optimizing deposition process of the ZnO:B films, high efficiencies of 8.8% and 10% for single junction thin film amorphous silicon solar cells (a-Si:H, intrinsic layer thickness < 200 nm) and amorphous/microcrystalline silicon tandem solar cells (a-Si:H/{mu}c-Si:H, intrinsic amorphous silicon layer

  3. Evolution of infrared spectra and optical emission spectra in hydrogenated silicon thin films prepared by VHF-PECVD

    Science.gov (United States)

    Hou, Guo-Fu; Geng, Xin-Hua; Zhang, Xiao-Dan; Sun, Jian; Zhang, Jian-Jun; Zhao, Ying

    2011-07-01

    A series of hydrogenated silicon thin films with varying silane concentrations have been deposited by using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The deposition process and the silicon thin films are studied by using optical emission spectroscopy (OES) and Fourier transfer infrared (FTIR) spectroscopy, respectively. The results show that when the silane concentration changes from 10% to 1%, the peak frequency of the Si-H stretching mode shifts from 2000 cm-1 to 2100 cm-1, while the peak frequency of the Si—H wagging—rocking mode shifts from 650 cm-1 to 620 cm-1. At the same time the SiH/Hα intensity ratio in the plasma decreases gradually. The evolution of the infrared spectra and the optical emission spectra demonstrates a morphological phase transition from amorphous silicon (a-Si:H) to microcrystalline silicon (μc-Si:H). The structural evolution and the μc-Si:H formation have been analyzed based on the variation of Hα and SiH intensities in the plasma. The role of oxygen impurity during the plasma process and in the silicon films is also discussed in this study.

  4. SYNTHESIS AND CHARACTERIZATION OF THE LAMELLAR MICROCRYSTALLINE ZINC PHOSPHATE α-Zn3 (PO4)2·4H2O

    Institute of Scientific and Technical Information of China (English)

    Yuan Aiqun; Bai Lijuan; Ma Shaomei; Tong Zhangfa

    2006-01-01

    Objective To study the structural and anticorrosive property of microcrystalline α-Zn3 (PO4)2 ·4H2O. Methods Zinc phosphate was prepared from zinc acetate and orthophosphate acid in aqueous solution.Structural characteristics of products were investigated by XRD, RAMAN, FTIR, TG-DTA, SEM, surface area,particle size distribution, and density measurements. Results The title compound, a highly crystalline, micronized (A), c0 =5. 0304(A), V=975.86 (A)3. Its specific area is 0. 701 m2/g, density 3. 1612 g/m3 , and average size 4.75μm . Conclusion Comparing with commercial Zinc phosphate, the synthesized iamellar microcrystalline zinc phosphate had excellent anticorrosive property and dispersibility.

  5. Silicon micro-mold

    Science.gov (United States)

    Morales, Alfredo M.

    2006-10-24

    The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

  6. The composition and structure of macro and microcrystalline paraffin waxes. Part 2. Results of analysis; Ueber die Zusammensetzung von makro- und mikrokristallinen Paraffinen. Teil 2. Untersuchungsergebnisse

    Energy Technology Data Exchange (ETDEWEB)

    Matthaei, M.; Butz, T. [Sasol Wax GmbH, Hamburg (Germany); Geissler, A. [Hochschule Zittau/Goerlitz (Germany)

    2004-02-01

    The composition and structure of the non-n-alkane fraction of macrocrystalline and microcrystalline paraffin waxes are described inconsistently and with contradictions in the current literature. Therefore, the aim of this work was to evaluate the substance of previous analytical techniques, in order to further develop and improve these methods and to state more precisely and thus broaden the knowledge of the structure of petroleum paraffin waxes. IR structure group analysis only resulted in relatively imprecise information. GC-MS enabled the identification and semi quantitative determination of various cycloalkanes. By adopting and further developing a polymer analysis {sup 13}C-NMR structure group analysis method it was possible to identify and to determine the semiquantification of 20 different structure groups. From the results we concluded that the non-n-alkane fraction of paraffin waxes mainly consists of isoalkanes. The side-chains of the isoalkanes are mainly located at the {gamma} position and consist to 60-80% of methyl groups, 5-20% of ethyl groups and 15-20% of longer alkyl groups. An average macrocrystalline paraffin molecule has about 0.14 side chains, an average microcrystalline paraffin molecule up to 0.67 side chains. Regarding the naphthenic structure class, only mono- and dialkyl substitued cyclohexanes were found with alkyl chain lengths of up to C{sub 26} in macrocrystalline paraffin and up to C{sub 34} in microcrystalline paraffin. The number of cyclohexyl groups in the average molecule increases with the graduation of the paraffin wax and reaches up to 0.22 maximum in microcrystalline wax. (orig.)

  7. Polycystalline silicon thin films for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, Christian Claus

    2012-01-15

    with an activation energy of E{sub A}{sup poly-Si}=1.1 eV. By long-lasting tempering or a short high-temperature step finally the stable layer configuration substrate/Al+Si islands(hillocks)/poly-Si can be reached (E{sub A}{sup hillocks}=2.4 eV). The further main topic of this thesis is the study of the applicability of the poly-silicon layers fabricated by means of the ALILE and R-ALILE process for electronic applications. First thin-film transistors were studied. Additionally thin-film solar cells with microcrystalline silicon as absorber material on polycrystalline R-ALILE seed layers were fabricated. Finally the suitedness of the fabricated poly-silicon layers for crytographic applications were studied.

  8. SILICON CARBIDE FOR SEMICONDUCTORS

    Science.gov (United States)

    This state-of-the-art survey on silicon carbide for semiconductors includes a bibliography of the most important references published as of the end...of 1964. The various methods used for growing silicon carbide single crystals are reviewed, as well as their properties and devices fabricated from...them. The fact that the state of-the-art of silicon carbide semiconductors is not further advanced may be attributed to the difficulties of growing

  9. Silicon Carbide Shapes.

    Science.gov (United States)

    Free-standing silicon carbide shapes are produced by passing a properly diluted stream of a reactant gas, for example methyltrichlorosilane, into a...reaction chamber housing a thin walled, hollow graphite body heated to 1300-1500C. After the graphite body is sufficiently coated with silicon carbide , the...graphite body is fired, converting the graphite to gaseous CO2 and CO and leaving a silicon carbide shaped article remaining.

  10. Bioaugmented hydrogen production from microcrystalline cellulose using co-culture - Clostridium acetobutylicumX{sub 9} and Ethanoigenens harbinenseB{sub 49}

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Aijie; Ren, Nanqi; Shi, Yinguen [School of Municipal and Environmental Engineering, Harbin Institute of Technology, P.O. Box 2614, 202 Haihe Road, Harbin 150090 (China); Lee, Duu-Jong [School of Municipal and Environmental Engineering, Harbin Institute of Technology, P.O. Box 2614, 202 Haihe Road, Harbin 150090 (China); Department of Chemical Engineering, National Taiwan University, Taipei (China)

    2008-01-15

    Dark fermentation of microcrystalline cellulose to produce biohydrogen using mono-culture or co-culture of isolated strains was studied. A strain (X{sub 9}) with high hydrogen yield from microcrystalline cellulose was isolated and identified to be closely affiliated with Clostridium acetobutylicum, ATCC 824. At 37{sup o}C and pH 5.0, the mono-culture of X{sub 9} yields hydrogen with a 5-h time lag and end liquid products primarily of acetate and butyrate. The co-culture of X{sub 9} with another strain, Ethanoigenens harbinenseB{sub 49}, which can produce hydrogen efficiently from monosaccharides but directly from microcrystalline cellulose, produced more efficiently the biohydrogen via ethanol-type fermentation metabolism compared with mono-culture X{sub 9} test. Bioaugmentation with X{sub 9}+B{sub 49} improved cellulose hydrolysis and subsequent hydrogen production rates as compared with that of mono-culture bioaugmentation with X{sub 9}. (author)

  11. Novel Silicon Nanotubes

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Novel silicon nanotubes with inner-diameter of 60-80 nm was prepared using hydrogen-added dechlorination of SiCl4 followed by chemical vapor deposition (CVD) on a NixMgyO catalyst. The TEM observation showed that the suitable reaction temperature is 973 K for the formation of silicon nanotubes. Most of silicon nanotubes have one open end and some have two closed ends. The shape ofnanoscale silicon, however, is a micro-crystal type at 873 K, a rod or needle type at 993 K and an onion-type at 1023 K, respectively.

  12. Breast Implants: Saline vs. Silicone

    Science.gov (United States)

    ... differ in material and consistency, however. Saline breast implants Saline implants are filled with sterile salt water. ... of any age for breast reconstruction. Silicone breast implants Silicone implants are pre-filled with silicone gel — ...

  13. Large area plasma deposition of microcrystalline silicon for micromorph thin-film solar modules; Grossflaechige Plasmaabscheidung von mikrokristallinem Silizium fuer mikromorphe Duennschichtsolarmodule

    Energy Technology Data Exchange (ETDEWEB)

    Kilper, Thilo

    2009-07-01

    This thesis addresses aspects of {mu}c-Si:H absorber layer fabrication that possess a high technological relevance for the industrial serial production of micromorph thin-film solar modules. The performed investigations focused on a) the {mu}c-Si:H absorber layer deposition rate, b) low total gas flow processes that exhibit a high silane utilization and a distinctly reduced hydrogen consumption, and c) the influence of oxygen and nitrogen impurities on the performance of {mu}c-Si:H solar cells. For the fabrication of {mu}c-Si:H absorber layers in a 30 x 30 cm{sup 2} PECVD reactor equipped with rf planar electrodes, it was found that an increase of the plasma excitation frequency from 13.56 to 40.68 MHz enables significant higher deposition rates without losses in cell performance and film homogeneity. 40.68 MHz {mu}c-Si:H solar cells prepared at RD = 1 nm/s yielded conversion efficiencies up to 9.2 % and had a similar good performance as 13.56 MHz {mu}c-Si:H solar cells deposited at RD = 0.5 nm/s. At deposition rates of 2.5 nm/s 40,68 MHz {mu}c-Si:H solar cells exhibited cell efficiencies of nearly 8 %. Moreover, it was demonstrated that 40.68 MHz {mu}c-Si:H absorber layers on 30 x 30 cm{sup 2} substrates have a similar good homogeneity as 13.56 MHz {mu}c-Si:H absorber layers concerning the film thickness and the material properties. By implementing a process control it was possible to suppress the strong initial process drift of a 13.56 MHz 0.5 nm/s {mu}c-Si:H low total gas flow process in the 30 x 30 cm{sup 2} PECVD reactor. Due to the successful stabilization of the {mu}c-Si:H growth conditions during the complete absorber layer deposition procedure, an efficiency enhancement of +1 % absolute was gained and the best {mu}c-Si:H solar cells prepared with the controlled low total gas flow process yielded efficiencies of 8.8 %. However, compared to standard gas flow processes it was found that this controlled low total gas flow process exhibits a worse homogeneity on 30 x 30 cm{sup 2} substrates concerning the {mu}c-Si:H material properties. By the intentional contamination of {mu}c-Si:H absorber layers with oxygen and nitrogen it was quantified which amounts of these atmospheric impurities are tolerable for the fabrication of ''state of the art'' {mu}c-Si:H solar cells. It was observed that the efficiency of 1.2 {mu}m thick {mu}c-Si:H solar cells starts to drop due to oxygen impurities if the threshold of [O] {approx} 1.2 x 10{sup 19} cm{sup -3} (240 ppm) is exceeded. For nitrogen impurities this threshold was found to be lower (6 x 10{sup 18} cm{sup -3} and 120 ppm, respectively). For both atmospheric impurities the thresholds shift to lower values for 3 {mu}m thick {mu}c-Si:H solar cells and to higher values for 0.5 {mu}m thick {mu}c-Si:H solar cells. Besides this it was observed that the distribution of oxygen and nitrogen impurities within the i-layer affects the cell performance. A high impurity content near to the p/i-interface is particularly critical, whereas a high impurity content in the i-layer bulk or near to the n/i-interface barely deteriorates the cell performance. Moveover, the performed investigations concerning the influence of oxygen and nitrogen on the structural and electrical {mu}c-Si:H properties revealed that both high oxygen and nitrogen concentrations induce a significant increase of charge carrier density and dark conductivity in {mu}c-Si:H absorber layers deposited near the {mu}c-Si:H/a-Si:H transition. (orig.)

  14. Effects of initial layers on surface roughness and crystallinity of microcrystalline silicon thin films formed by remote electron cyclotron resonance silane plasma

    CERN Document Server

    Murata, K; Hori, Masaki; Goto, T; Ito, M

    2002-01-01

    We have observed mu c-Si:H films grown in the glass substrate in electron cyclotron resonance plasma-enhanced chemical vapor deposition employing two-step growth (TSG) method, where the seed layer was formed without charged species firstly, and subsequently, the film with charged species. The mu c-Si:H films with smooth surface and high crystallinity were synthesized with a relatively high deposition rate at a low substrate temperature by TSG. By Fourier transform infrared attenuated-total reflection, it was found that the surface roughness and crystallinity of seed layer were related to the ratio of SiH bonds over SiH sub 2 ones in the film. Consequently, the control of chemical bonds at the initial layer is of importance and TSG method is effective for the formation of mu c-Si:H film with high quality.

  15. Research on the boron contamination at the p/i interface of microcrystalline silicon solar cells deposited in a single PECVD chamber

    Institute of Scientific and Technical Information of China (English)

    Zhang Xiao-Dan; Sun Fu-He; Wei Chang-Chun; Sun Jian; Zhang De-Kun; Geng Xin-Hua; Xiong Shao-Zhen; Zhao Ying

    2009-01-01

    This paper studies boron contamination at the interface between the p and i layers of μc-Si:H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μc-Si:H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μc-Si:H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment.

  16. 甚高频对微晶硅薄膜微观结构的影响%Influence of Ultra High Frequency on Microcrystalline Silicon Growth

    Institute of Scientific and Technical Information of China (English)

    卢景霄; 文书堂; 郭学军; 李瑞; 张磊

    2008-01-01

    系统研究了射频和甚高频下沉积微晶硅薄膜时沉积参数对薄膜质量的影响,并优化了沉积参数.在相同的沉积条件下,甚高频沉积速度明显大于射频沉积速度,并且制备出的太阳能电池效率同样高于射频沉积.一般情况下,当沉积速率提高时,沉积薄膜中存在大量悬挂键和Si-2H键等缺陷,会大大降低材料的光电性能,同样也会降低太阳能电池的效率.在保证材料的光电性能的前提下提高沉积速度,沉积参数需要优化.在系列优化沉积参数后,微晶硅沉积速率达到0.75 nm/s,在该沉积速率下,制备出的单结n-i-p结构的太阳能电池效率达到5.41%.%The deposition parameters of microerystalline thin films by RF-PECVD and VHF-PECVD are systemati- cally studied. Under similar conditions, the deposition rate of μc-Si: H thin films is higher by VHF-PECVD than byRF-PECVD. With deposition rate successively enhanced by VHF-PECVD, μc-Si: H solar cell efficiency is also im-proved. Generally, when deposition rate increases, dangling bonds related defects also increase, which is detrimen-tal to solar cell performance. In order to increase deposition rate while keeping defects low, the deposition parame-ters are thoroughly investigated. Kept the deposition parameters as 0.75 nm/s, μc-Si: H solar cells are also fabrica-ted and an initial efficiency of 5.41% is achieved.

  17. VHF-PECVD法制备氢化硅薄膜及单结电池%Hydrogented Microcrystalline Silicon Films and Single Junction Solar Cell by VHF-PECVD

    Institute of Scientific and Technical Information of China (English)

    吴志猛; 雷青松; 赵颖; 耿新华; 奚建平

    2005-01-01

    利用VHF-PECVD分解硅烷和氢气的混合气体来制备本征微晶硅薄膜.运用拉曼散射和X射线衍射研究了不同硅烷浓度对薄膜的影响.随着硅烷浓度的增加,沉积速率和光敏性增加而晶化率下降.将优化的本征材料应用到pin电池中,得到本征层厚度约为1μm的微晶电池,效率达5.87%.

  18. In-situ Raman spectroscopy. A method to study and control the growth of microcrystalline silicon for thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Muthmann, Stefan

    2012-08-22

    This work deals with the design and application of a novel experiment, which enables in-situ Raman measurements during the parallel plate plasma enhanced chemical vapor deposition (PECVD) of {mu}cSi:H. Measurements of the crystalline volume fraction (I{sub C}{sup RS}) and the temperature of a growing film are carried out using the novel setup. To enable in-situ Raman measurement of central regions of the coated substrate in a PECVD system, optical access under normal incidence is necessary. An experimental setup in which an optical feed-through was integrated into a PECVD electrode was developed. This setup introduces a disturbance to the electrical field which sustains the plasma. By designing metallic shields the impact of the feed through was reduced considerably at low optical losses. The homogeneity of films deposited with the novel setup in different growth regimes was studied. A correlation between the magnitude of the inhomogeneity caused by the feed-through and the characteristics of the deposition regimes is found. Raman spectroscopy demands the illumination of a sample with a laser and the collection of the scattered radiation. Due to absorption of the laser light the temperature of the illuminated film is increased. Since the temperature determines the properties of a growing film the laser-induced temperature increase was studied. By pulsing the laser radiation of minimal temperature increase at maximal signal intensity was obtained. The crystalline volume fraction of a growing {mu}cSi:H layer was determined in-situ with the novel setup. A minimal temporal resolution of less than 17.5 s at sufficient signal-to-noise-ratio was achieved, which corresponds to less than 9 nm of deposited material during one measurement interval at the industrial standard growth rate of 0.5 nm/s. The obtained results were compared to depth resolved measurements which were carried out after the deposition. An excellent agreement between both methods validates the reliability of the in-situ method. The initial phase of deposition is of great importance for the performance of a {mu}cSi:H thin-film solar cell. Hence the dependence of the evolution of the crystalline volume fraction during initial layer growth on the properties of the underlying seed layer was studied in-situ. A seed layer dependent increase and subsequent stabilization of the crystalline volume fraction was observed. By actively controlling the deposition parameters based on these results it was possible to reduce the observed inhomogeneity of the Raman crystallinity in growth direction. A possible application of in-situ Raman spectroscopy as basis of an active process control was studied by testing the ability of in-situ Raman spectroscopy to detect fluctuations of the deposition parameters on the example of a disturbance of the process gas flow. It was possible to detect the reaction of the layer growth on a change of deposition conditions in-situ. By correlating the in-situ measurements to results obtained on solar-cells it was found that - unless the process fluctuation happens during the initial phase of deposition - it is possible to maintain state-of-the art solar cell performance by an active process control. By modulating the plasma emission synchronized to the Raman measurements the signal-to-noise level of the Raman measurements was reduced. Two deposition regimes were distinguished by their characteristic plasma induced temperature increase. In situ measurements show that an active control of the substrate heater results in a stabilized temperature of the growing layer throughout the deposition of a {mu}cSi:H film. (orig.)

  19. Pixel-Level Digital-to-Analog Conversion Scheme for Compact Data Drivers of Active Matrix Organic Light-Emitting Diodes with Low-Temperature Polycrystalline Silicon Thin-Film Transistors

    Science.gov (United States)

    Tae-Wook Kim,; Byong-Deok Choi,

    2010-03-01

    This paper shows that a part of a digital-to-analog conversion (DAC) function can be included in a pixel circuit to save the circuit area of an integrated data driver fabricated with low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). Because the pixel-level DAC can be constructed by two TFTs and one small capacitor, the pixel circuit does not become markedly complex. The design of an 8-bit DAC, which combines a 6-bit resistor-string-based DAC and a 2-bit pixel-level DAC for a 4-in. diagonal VGA format active matrix organic light-emitting diode (AMOLED), is shown in detail. In addition, analysis results are presented, revealing that the 8-bit DAC scheme including a 2-bit pixel-level DAC with 1:3 demultiplexing can be applied to very high video formats, such as XGA, for a 3 to 4-in. diagonal AMOLED. Even for a 9- to 12-in. diagonal AMOLED, the proposed scheme can still be applied to the XGA format, even though no demultiplexing is allowed. The total height of the proposed 8-bit DAC is approximately 960 μm, which is almost one-half of that of the previous 6-bit resistor-string-based DAC.

  20. Bioavailability of ibuprofen from matrix mini-tablets based on a mixture of starch and microcrystalline wax.

    Science.gov (United States)

    De Brabander, C; Vervaet, C; Görtz, J P; Remon, J P; Berlo, J A

    2000-11-01

    The bioavailability of ibuprofen from matrix mini-tablets based on microcrystalline wax and a starch derivative was tested. An oral dose of 300 mg of ibuprofen was administered to healthy volunteers (n=8) in a randomized cross-over study design either as a commercial matrix formulation (Ibu-Slow 600) or as mini-tablets (filled into hard gelatin capsules). The mini-tablets consisted of 60% ibuprofen, 15% Paracera M (wax), 22.5% DDWM (starch) and 2.5% triacetin (lubricant). t50% of the in vitro release was 4.5 and 5 h for the mini-tablet and Ibu-slow formulations, respectively. Both formulations behaved in vivo as sustained-release formulation; their HVDt50%Cmax value was determined at 5.6 and 5.1 h for the mini-tablet and Ibu-slow formulations, respectively. A significantly higher value of Cmax was seen for the mini-tablet formulation, resulting in a relative bioavailability of 116 +/- 22.6% compared to the Ibu-slow matrix. These data demonstrate that the experimental mini-tablets can be used to formulate sustained-release dosage forms.

  1. Mechanical Properties of Microcrystalline Metal-Organic Frameworks (MOFs) Measured by Bimodal Amplitude Modulated-Frequency Modulated Atomic Force Microscopy.

    Science.gov (United States)

    Sun, Yao; Hu, Zhigang; Zhao, Dan; Zeng, Kaiyang

    2017-09-08

    Direct measurement of the mechanical properties of microcrystalline metal-organic framework (MOF) nanoparticles is challenging and rarely explored. In this work, we apply an effective method to realize elastic modulus mapping of a series of isostructural single MOF nanoparticles (100-500 nm) via bimodal amplitude modulated-frequency modulated atomic force microscopy. By probing five types of zirconium (Zr) and hafnium (Hf) isostructural UiO-66-type MOFs, we experimentally found that UiO-66(Hf)-type MOFs possess the higher elastic modulus (46-104 GPa) than that of UiO-66(Zr)-type MOFs (34-100 GPa), both of which are higher than that of reported zinc/copper based MOFs (3-10 GPa). We also experimentally demonstrate that the mechanical properties of MOFs can be tuned by adjusting the chemical functionalities of the ligands or using different metal nodes. In detail, the sterically bulky functional groups increase the mechanical properties of the resultant UiO-66-type MOFs, possibly due to the increased atomic density. These results pave a way to the direct measurement of mechanical properties of MOFs crystalline particles and provide an incisive perspective to the design of MOFs with high mechanical properties.

  2. Chitosan-kaolin coprecipitate as disintegrant in microcrystalline cellulose-based pellets elaborated by extrusion-spheronization.

    Science.gov (United States)

    Goyanes, Alvaro; Souto, Consuelo; Martínez-Pacheco, Ramón

    2013-02-01

    The usefulness of a coprecipitate of chitosan and kaolin as disintegrant in the pellets of microcrystalline cellulose (MCC) and hydrochlorothiazide (HCT) (as a model of poorly water-soluble drug) produced by extrusion-spheronization was evaluated in this study. The effectiveness of chitosan-kaolin coprecipitate to increase the dissolution rate was compared with that of kaolin and chitosan. A possible synergy effect was also evaluated between the coprecipitate, kaolin or chitosan and sorbitol, added to the pellets as a very water-soluble diluent. The chitosan-kaolin coprecipitate, the kaolin or the chitosan allowed pellets to be obtained of adequate size, roundness, mechanical strength and flow properties. Furthermore, the incorporation of chitosan-kaolin coprecipitate or chitosan significantly increased the dissolution rate of HCT independently of the sorbitol content. The effects on the dissolution of HCT derived from the incorporation of coprecipitate to the pellets can be attributed to its content of chitosan. However, the addition of kaolin into the pellets did not significantly affect the HCT dissolution process. The pellets incorporating coprecipitated chitosan-kaolin or chitosan and the maximum proportion of sorbitol (50%) led to the highest HCT dissolution rate and experienced a rapid and complete disintegration in the dissolution medium.

  3. Evaluation of Microcrystalline Chitosan and Fibrin Membranes as Platelet-Derived Growth Factor-BB Carriers with Amoxicillin

    Directory of Open Access Journals (Sweden)

    Kazimiera H. Bodek

    2015-01-01

    Full Text Available The aim of this study was to describe the mechanical and sorption features of homogeneous and composite membranes which consist of microcrystalline chitosan (MCCh and fibrin (Fb in various proportions as well as the in vitro kinetics of platelet-derived growth factor-BB (PDGF-BB released from ten types of membranes in the presence or absence of amoxicillin (Am. The films were characterized by Fourier transform infrared (FTIR spectroscopy, mechanical tests: breaking strength (Bs and elongation at break (Eb, as well as SEM images, and swelling study. The influence of the form of samples (dry or wet on Young’s modulus (E was also examined. The homogeneous MCCh (M1 and composite M3 and M4 (MCCh : Fb = 2 : 1 and 1 : 1 membranes were characterized by good sorption properties and higher mechanical strength, when compared with Fb (M2 membrane. Connecting MCCh with Fb decreases release of PDGF-BB and increases release of Am. The most efficient release of PDGF-BB was observed in the case of M4 (the optimum MCCh : Fb ratio was 1 : 1 membrane. It was found that the degree of PDGF-BB release from the membrane is influenced by the physicochemical and mechanical characteristics of the films and by its affinity to growth factor PDGF-BB.

  4. Exploring the potential of polacrilin potassium as a novel superdisintegrant in microcrystalline cellulose based pellets prepared by extrusion-spheronization

    Directory of Open Access Journals (Sweden)

    Amita K Joshi

    2011-01-01

    Full Text Available Polacrilin potassium (PP, an ion exchange resin, was used as a superdisintegrant to improve the dissolution of rifampicin, from microcrystalline cellulose (MCC based pellets prepared by extrusion-spheronization. Production of fast release pellets by extrusion-spheronization using MCC is a complicated process. In the present study, pellets were prepared containing 50% w/w rifampicin (BCS class II drug and 40% w/w MCC as extrusion-spheronization aid. Different levels of PP and lactose ratio investigated were 0:10, 2:8, 4:6, 6:4, 8:2, and 10:0. Pellets were evaluated for yield, size, size distribution, shape, porosity, friability, residual moisture, and dissolution efficiency (DE at 30 minutes. Incorporation of this novel superdisintegrant had no adverse effect on the mechanical and micromeritic characteristics of pellets. All the batches of pellets showed high yields′, ~90%; narrow particle size distribution; aspect ratio, 1.0-1.1; friability, <1%; and porosity, 45.51-49.84%. Dissolution profiles were compared using model-independent approaches; DE and similarity factor, f 2 . Addition of Polacrilin results in significant improvement in the DE of rifampicin. The dissolution profiles were significantly different from the dissolution profile of pellets formulated without PP. This preliminary study indicates that PP can serve as an effective superdisintegrant in MCC pellets prepared by extrusion-spheronization.

  5. Statistical Optimization for Acid Hydrolysis of Microcrystalline Cellulose and Its Physiochemical Characterization by Using Metal Ion Catalyst

    Directory of Open Access Journals (Sweden)

    Md. Ziaul Karim

    2014-10-01

    Full Text Available Hydrolyzing the amorphous region while keeping the crystalline region unaltered is the key technology for producing nanocellulose. This study investigated if the dissolution properties of the amorphous region of microcrystalline cellulose can be enhanced in the presence of Fe3+ salt in acidic medium. The process parameters, including temperature, time and the concentration of metal chloride catalyst (FeCl3, were optimized by using the response surface methodology (RSM. The experimental observation demonstrated that temperature and time play vital roles in hydrolyzing the amorphous sections of cellulose. This would yield hydrocellulose with higher crystallinity. The factors that were varied for the production of hydrocellulose were the temperature (x1, time (x2 and FeCl3 catalyst concentration (x3. Responses were measured in terms of percentage of crystallinity (y1 and the yield (y2 of the prepared hydrocellulose. Relevant mathematical models were developed. Analysis of variance (ANOVA was carried out to obtain the most significant factors influencing the responses of the percentage of crystallinity and yield. Under optimum conditions, the percentage of crystallinity and yield were 83.46% and 86.98% respectively, at 90.95 °C, 6 h, with a catalyst concentration of 1 M. The physiochemical characteristics of the prepared hydrocellulose were determined in terms of XRD, SEM, TGA and FTIR analyses. The addition of FeCl3 salt in acid hydrolyzing medium is a novel technique for substantially increasing crystallinity with a significant morphological change.

  6. Joint action of ultrasonic and Fe³⁺ to improve selectivity of acid hydrolysis for microcrystalline cellulose.

    Science.gov (United States)

    Li, Jinbao; Qiang, Dandan; Zhang, Meiyun; Xiu, Huijuan; Zhang, Xiangrong

    2015-09-20

    In this study, the combination of Fe(3+)/HCl and ultrasonic treatment was applied to selectively hydrolyze cellulose for the preparation of microcrystalline cellulose (MCC). It was found that the crystallinity and specific surface area of hydrocellulose samples were higher (78.92% and 2.23581 m(2)g(-1), respectively), compared with the method that only used Fe(3+)/HCl catalyst without ultrasonic treatment. Meanwhile, the hydrolysate can be extracted and reused for cellulose hydrolysis for three runs, which was effective in saving the dosage of chemicals and reducing the pollution of the environment without affecting the properties of hydrocellulose. Moreover, the increased concentration of total reducing sugar (TRS) after three runs may be used as a valuable source in biofuels production. The technology of cellulose hydrolysis, by retaining the crystalline region for MCC products while promoting hydrolysis of amorphous region for further utilization is of great novelty, which may prove valuable in converting biomass into chemicals and biofuels, environmentally and economically. Copyright © 2015 Elsevier Ltd. All rights reserved.

  7. A novel process for synthesis of spherical nanocellulose by controlled hydrolysis of microcrystalline cellulose using anaerobic microbial consortium.

    Science.gov (United States)

    Satyamurthy, P; Vigneshwaran, N

    2013-01-10

    Degradation of cellulose by anaerobic microbial consortium is brought about either by an exocellular process or by secretion of extracellular enzymes. In this work, a novel route for synthesis of nanocellulose is described where in an anaerobic microbial consortium enriched for cellulase producers is used for hydrolysis. Microcrystalline cellulose derived from cotton fibers was subjected to controlled hydrolysis by the anaerobic microbial consortium and the resultant nanocellulose was purified by differential centrifugation technique. The nanocellulose had a bimodal size distribution (43±13 and 119±9 nm) as revealed by atomic force microscopy. A maximum nanocellulose yield of 12.3% was achieved in a span of 7 days. While the conventional process of nanocellulose preparation using 63.5% (w/w) sulfuric acid resulted in the formation of whisker shaped nanocellulose with surface modified by sulfation, controlled hydrolysis by anaerobic microbial consortium yielded spherical nanocellulose also referred to as nano crystalline cellulose (NCC) without any surface modification as evidenced from Fourier transform infrared spectroscopy. Also, it scores over chemo-mechanical production of nanofibrillated cellulose by consuming less energy due to enzyme (cellulase) assisted catalysis. This implies the scope for use of microbial prepared nanocellulose in drug delivery and bio-medical applications requiring bio-compatibility. Copyright © 2012 Elsevier Inc. All rights reserved.

  8. Physicochemical properties and characteristics of microcrystalline cellulose derived from the cellulose of oil palm empty fruit bunch

    Science.gov (United States)

    Nasution, H.; Yurnaliza; Veronicha; Irmadani; Sitompul, S.

    2017-07-01

    Cellulose from oil palm empty fruit bunch was hydrolyzed with different concentration of hydrochloric acid (HCl) viz. 2; 2.5; 3; 3.5 N to prepare microcrystalline cellulose (MCC). The temperature of hydrolysis process was at 75 °C. The physicochemical properties such as organoleptic characteristic, water soluble substance, and loss on drying were conducted during this study. Infrared, x-ray diffraction, and scanning electron microscope (SEM) image were also performed to investigate the effect of hydrolysis on the molecular structure, crystal structure and morphology of the MCC, respectively. The results have showed, in term of the physicochemical properties, for all concentrations of HCl the MCC was obtained. The FTIR results showed the -OH functional group tended to reduced as alpha cellulose has changed to MCC. The x-ray diffraction pattern revealed that the crystal structure was traced on MCC where the highest was observed at hydrolysis process of 2.5N HCl. The image from SEM displayed an individualized and fibrous MCC on the treatment of 2.5N HCl.

  9. Identification of hydroxyl protons, determination of their exchange dynamics, and characterization of hydrogen bonding in a microcrystallin protein.

    Science.gov (United States)

    Agarwal, Vipin; Linser, Rasmus; Fink, Uwe; Faelber, Katja; Reif, Bernd

    2010-03-10

    Heteronuclear correlation experiments employing perdeuterated proteins enable the observation of all hydroxyl protons in a microcrystalline protein by MAS solid-state NMR. Dipolar-based sequences allow magnetization transfers that are >50 times faster compared to scalar-coupling-based sequences, which significantly facilitates their assignment. Hydroxyl exchange rates were measured using EXSY-type experiments. We find a biexponential decay behavior for those hydroxyl groups that are involved in side chain-side chain C-O-H...O horizontal lineC hydrogen bonds. The quantification of the distances between the hydroxyl proton and the carbon atoms in the hydrogen-bonding donor as well as acceptor group is achieved via a REDOR experiment. In combination with X-ray data and isotropic proton chemical shifts, availability of (1)H,(13)C distance information can aid in the quantitative description of the geometry of these hydrogen bonds. Similarly, correlations between backbone amide proton and carbonyl atoms are observed, which will be useful in the analysis of the registry of beta-strand arrangement in amyloid fibrils.

  10. Simple and selective spectrophotometric determination of ruthenium after solid phase extraction with some quinoxaline dyes into microcrystalline p-dichlorobenzene

    Science.gov (United States)

    Amin, Alaa S.

    2002-07-01

    A simple selective and highly sensitive extraction method has been developed for the determination of ruthenium spectrophotometrically after extraction of its 2,3-dichloro-6-(3-carboxy-2-hydroxy-1-naphthylazo)quinoxaline (I), 2,3-dichloro-6-(2-hydroxy-3,5-dinitrophenylazo)quinoxaline (II) and 2,3-dichloro-6-(2,7-dihydroxy-naphthylazo)quinoxaline (III) complexes into microcrystalline p-dichlorobenzene. The optimization of experimental conditions for the procedure is studied. The solid p-dichlorobenzene containing the ruthenium-reagent (I-III) complexes is separated by filtration and dissolved in N, N-dimethylformamide. The absorbance is measured at λmax 622, 518 and 542 nm against reagents I, II and III, respectively, as blank. Beer's law is obeyed upto 2.5 μg ml -1 of ruthenium. The molar absorptivity, Sandell sensitivity, detection and quantification limits are calculated, when compared with those parameters without using solid phase extraction method. The interference of various ions has been studied in detail and the statistical evaluation of the experimental results is reported. The proposed methods have been successfully applied for the determination of trace amount of ruthenium in seawater, ore and metallurgy products.

  11. Functionalization of Microcrystalline Cellulose with N,N-dimethyldodecylamine for the Removal of Congo Red Dye from an Aqueous Solution

    Directory of Open Access Journals (Sweden)

    Dongying Hu

    2014-08-01

    Full Text Available Microcrystalline cellulose (MCC was functionalized with quaternary amine groups for use as an adsorbent to remove Congo Red dye (CR from aqueous solution. The ultrasonic pretreatment of MCC was investigated during its functionalization. Characterization was conducted using infrared spectroscopy (FT-IR, X-ray photoelectron spectroscopy (XPS, X-ray diffraction (XRD, and scanning electron microscopy (SEM. The batch adsorption of the functionalized MCC was studied to evaluate the effects of dye concentration, pH of solution, temperature, and NaCl concentration on the adsorption CR. The adsorbent (FM-1 obtained using ultrasonic pretreatment of MCC under 10.8 kJ•g–1 exhibited an adsorption capacity of 304 mg•g–1 at initial pH under a dose of 0.1 g•L–1 and initial concentration of 80 mg•L–1. After functionalization, the FT-IR and XPS results indicated that the quaternary amine group was successfully grafted onto the cellulose, the surface was transformed to be coarse and porous, and the crystalline structure of the original cellulose was disrupted. FM-1 has been shown to be a promising and efficient adsorbent for the removal of CR from an aqueous solution.

  12. Advax™, a novel microcrystalline polysaccharide particle engineered from delta inulin, provides robust adjuvant potency together with tolerability and safety.

    Science.gov (United States)

    Petrovsky, Nikolai; Cooper, Peter D

    2015-11-04

    There is an ongoing need for new adjuvants to facilitate development of vaccines against HIV, tuberculosis, malaria and cancer, amongst many others. Unfortunately, the most potent adjuvants are often associated with toxicity and safety issues. Inulin, a plant-derived polysaccharide, has no immunological activity in its native soluble form but when crystallized into a stable microcrystalline particulate from (delta inulin) acquires potent adjuvant activity. Delta inulin has been shown to enhance humoral and cellular immune responses against a broad range of co-administered viral, bacterial, parasitic and toxin antigens. Inulin normally crystallizes as large heterogeneous particles with a broad size distribution and variable solubility temperatures. To ensure reproducible delta inulin particles with a consistent size distribution and temperature of solubility, a current Good Manufacturing Practice (cGMP) process was designed to produce Advax™ adjuvant. In its cCMP form, Advax™ adjuvant has proved successful in human trials of vaccines against seasonal and pandemic influenza, hepatitis B and insect sting anaphylaxis, enhancing antibody and T-cell responses while being safe and well tolerated. Advax™ adjuvant represents a novel human adjuvant that enhances both humoral and cellular immunity. This review describes the discovery and development of Advax™ adjuvant and research into its unique mechanism of action.

  13. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  14. Nonlinear silicon photonics

    Science.gov (United States)

    Tsia, Kevin K.; Jalali, Bahram

    2010-05-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

  15. Periodically poled silicon

    Science.gov (United States)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  16. ALICE silicon strip module

    CERN Multimedia

    Maximilien Brice

    2006-01-01

    This small silicon detector strip will be inserted into the inner tracking system (ITS) on the ALICE detector at CERN. This detector relies on state-of-the-art particle tracking techniques. These double-sided silicon strip modules have been designed to be as lightweight and delicate as possible as the ITS will eventually contain five square metres of these devices.

  17. SILICON CARBIDE DATA SHEETS

    Science.gov (United States)

    These data sheets present a compilation of a wide range of electrical, optical and energy values for alpha and beta- silicon carbide in bulk and film...spectrum. Energy data include energy bands, energy gap and energy levels for variously-doped silicon carbide , as well as effective mass tables, work

  18. Silicon Valley Ecosystem

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2005-01-01

    @@ It is unlikely that any industrial region of the world has received as much scrutiny and study as Silicon Valley. Despite the recent crash of Internet and telecommunications stocks,Silicon Valley remains the world's engine of growth for numerous high-technology sectors.

  19. Photoluminescence of Silicon Nanocrystals in Silicon Oxide

    Directory of Open Access Journals (Sweden)

    L. Ferraioli

    2007-01-01

    Full Text Available Recent results on the photoluminescence properties of silicon nanocrystals embedded in silicon oxide are reviewed and discussed. The attention is focused on Si nanocrystals produced by high-temperature annealing of silicon rich oxide layers deposited by plasma-enhanced chemical vapor deposition. The influence of deposition parameters and layer thickness is analyzed in detail. The nanocrystal size can be roughly controlled by means of Si content and annealing temperature and time. Unfortunately, a technique for independently fine tuning the emission efficiency and the size is still lacking; thus, only middle size nanocrystals have high emission efficiency. Interestingly, the layer thickness affects the nucleation and growth kinetics so changing the luminescence efficiency.

  20. Steps towards silicon optoelectronics

    CERN Document Server

    Starovoytov, A

    1999-01-01

    nanostructure fabrication. Thus, this thesis makes a dual contribution to the chosen field: it summarises the present knowledge on the possibility of utilising optical properties of nanocrystalline silicon in silicon-based electronics, and it reports new results within the framework of the subject. The main conclusion is that due to its promising optoelectronic properties nanocrystalline silicon remains a prospective competitor for the cheapest and fastest microelectronics of the next century. This thesis addresses the issue of a potential future microelectronics technology, namely the possibility of utilising the optical properties of nanocrystalline silicon for optoelectronic circuits. The subject is subdivided into three chapters. Chapter 1 is an introduction. It formulates the oncoming problem for microelectronic development, explains the basics of Integrated Optoelectronics, introduces porous silicon as a new light-emitting material and gives a brief review of other competing light-emitting material syst...

  1. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  2. MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2014-01-01

    Full Text Available We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc and low fill factor (FF; however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H film is preferable for the deposition on the surface of MOCVD ZnO film rather than the microcrystalline film due to its less sensitivity to textured surface, and this allowed an improvement in the FF. The n-i-p flexible amorphous silicon solar cell using the MOCVD ZnO/screen printed Ag back reflector showed an initial efficiency of 6.2% with Voc=0.86 V, Jsc=12.4 mA/cm2, and FF = 0.58 (1 cm2. The identical quantum efficiency and comparable performance to the cells using conventional sputtered Ag back electrode have verified the potential of the MOCVD ZnO/screen printed Ag back reflector and possible opportunity to use the screen printed Ag thick film for flexible thin film silicon solar cells.

  3. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  4. Silicon applications in photonics

    Science.gov (United States)

    Jelenski, A. M.; Gawlik, G.; Wesolowski, M.

    2005-09-01

    Silicon technology enabled the miniaturization of computers and other electronic system for information storage, transmission and transformation allowing the development of the Knowledge Based Information Society. Despite the fact that silicon roadmap indicates possibilities for further improvement, already now the speed of electrons and the bandwidth of electronic circuits are not sufficient and photons are commonly utilized for signal transmission through optical fibers and purely photonic circuits promise further improvements. However materials used for these purposes II/V semiconductor compounds, glasses make integration of optoelectronic circuits with silicon complex an expensive. Therefore research on light generation, transformation and transmission in silicon is very active and recently, due to nanotechnology some spectacular results were achieved despite the fact that mechanisms of light generation are still discussed. Three topics will be discussed. Porous silicon was actively investigated due to its relatively efficient electroluminescence enabling its use in light sources. Its index of refraction, differs considerably from the index of silicon, and this allows its utilization for Bragg mirrors, wave guides and photonic crystals. The enormous surface enables several applications on medicine and biotechnology and in particular due to the effective chemo-modulation of its refracting index the design of optical chemosensors. An effective luminescence of doped and undoped nanocrystalline silicon opened another way for the construction of silicon light sources. Optical amplification was already discovered opening perspectives for the construction of nanosilicon lasers. Luminescences was observed at red, green and blue wavelengths. The used technology of silica and ion implantation are compatible with commonly used CMOS technology. Finally the recently developed and proved idea of optically pumped silicon Raman lasers, using nonlinearity and vibrations in the

  5. Roadmap on silicon photonics

    Science.gov (United States)

    Thomson, David; Zilkie, Aaron; Bowers, John E.; Komljenovic, Tin; Reed, Graham T.; Vivien, Laurent; Marris-Morini, Delphine; Cassan, Eric; Virot, Léopold; Fédéli, Jean-Marc; Hartmann, Jean-Michel; Schmid, Jens H.; Xu, Dan-Xia; Boeuf, Frédéric; O'Brien, Peter; Mashanovich, Goran Z.; Nedeljkovic, M.

    2016-07-01

    Silicon photonics research can be dated back to the 1980s. However, the previous decade has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology that is poised to revolutionize a number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon photonics is the ability to use CMOS-like fabrication resulting in high-volume production at low cost. This is a key enabling factor for bringing photonics to a range of technology areas where the costs of implementation using traditional photonic elements such as those used for the telecommunications industry would be prohibitive. Silicon does however have a number of shortcomings as a photonic material. In its basic form it is not an ideal material in which to produce light sources, optical modulators or photodetectors for example. A wealth of research effort from both academia and industry in recent years has fueled the demonstration of multiple solutions to these and other problems, and as time progresses new approaches are increasingly being conceived. It is clear that silicon photonics has a bright future. However, with a growing number of approaches available, what will the silicon photonic integrated circuit of the future look like? This roadmap on silicon photonics delves into the different technology and application areas of the field giving an insight into the state-of-the-art as well as current and future challenges faced by researchers worldwide. Contributions authored by experts from both industry and academia provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths. Advances in science and technology required to meet challenges faced by the field in each of these areas are also addressed together with

  6. Biocatalytic methanolysis activities of cross-linked protein-coated microcrystalline lipase toward esterification/transesterification of relevant palm products.

    Science.gov (United States)

    Raita, Marisa; Laosiripojana, Navadol; Champreda, Verawat

    2015-03-01

    Biocatalysis by immobilized lipase is an efficient alternative process for conversion of crude vegetable oil with high free fatty acid content to biodiesel, which is the limit of the conventional alkaline-catalyzed reaction. In this study, influences of solid-state organic and inorganic buffer core matrices with different pKa on catalytic performance of cross-linked protein coated microcrystalline biocatalysts prepared from Thermomyces lanuginosus lipase (CL-PCMC-LIP) toward esterification of palmitic acid (PA), transesterification of refined palm oil (RPO), and co-ester/transesterification of crude palm oil (CPO) to fatty acid methyl ester (FAME) was studied. Glycine, CAPSO (3-(cyclohexylamino)-2-hydroxy-1-propanesulfonic acid), and TAPS ([(2-hydroxy-1,1-bis(hydroxymethyl)ethyl)amino]-1-propanesulfonic acid) were shown to be potent core matrices for these reactions. The optimal reaction contained 4:1 [methanol]/[fatty acid] molar equivalence ratio with 20% (w/w) CL-PCMC-LIP on glycine in the presence of tert-butanol as a co-solvent. Deactivation effect of glycerol on the biocatalyst reactive surface was shown by FTIR, which could be alleviated by increasing co-solvent content. The maximal FAME yields from PA, RPO, and CPO reached 97.6, 94.9, and 95.5%, respectively on a molar basis under the optimum conditions after incubation at 50°C for 6h. The biocatalyst retained >80% activity after recycling in five consecutive batches. The work demonstrates the potential of CL-PCMC-LIP on one-step conversion of inexpensive crude fatty acid-rich feedstock to biodiesel. Copyright © 2015 Elsevier Inc. All rights reserved.

  7. Enhancing the plasma illumination behaviour of microplasma devices using microcrystalline/ultra-nanocrystalline hybrid diamond materials as cathodes.

    Science.gov (United States)

    Chang, Tinghsun; Lou, Shiucheng; Chen, Huangchin; Chen, Chulung; Lee, Chiyoung; Tai, Nyanhwa; Lin, Inan

    2013-08-21

    The properties of capacity-type microplasma devices were significantly enhanced due to the utilisation of hybrid diamond films as cathodes. The performance of the microplasma devices was closely correlated with the electron field emission (EFE) properties of the diamond cathode materials. The nanoemitters, which were prepared by growing duplex-structured diamond films [microcrystalline diamond (MCD)/ultra-nanocrystalline diamond (UNCD)] on Si-pyramid templates via a two-step microwave plasma enhanced chemical vapour deposition (MPE-CVD) process, exhibited improved EFE properties (E0 = 5.99 V μm(-1), J(e) = 1.10 mA cm(-2) at 8.50 V μm(-1) applied field), resulting in superior microplasma device performance (with a lower threshold field of 200 V mm(-1) and a higher plasma current density of 7.80 mA cm(-2)) in comparison with UNCD film devices prepared using a single-step MPE-CVD process. The superior EFE properties of the duplex-structured MCD-UNCD films relative to those of the UNCD films can be attributed to the unique granular structure of the diamond films. High-resolution transmission electron microscopy reveals that the MCD-UNCD films consisted of abundant graphitic phases located at the periphery of large diamond aggregates and at the boundaries between the ultra-small diamond grains. The presence of the graphite phase is presumed to be the prime factor that renders these films more conductive and causes these films to exhibit higher EFE properties, thus resulting in the improved plasma illumination properties of the microplasma devices.

  8. Recrystallization of polycrystalline silicon

    Science.gov (United States)

    Lall, C.; Kulkarni, S. B.; Graham, C. D., Jr.; Pope, D. P.

    1981-01-01

    Optical metallography is used to investigate the recrystallization properties of polycrystalline semiconductor-grade silicon. It is found that polycrystalline silicon recrystallizes at 1380 C in relatively short times, provided that the prior deformation is greater than 30%. For a prior deformation of about 40%, the recrystallization process is essentially complete in about 30 minutes. Silicon recrystallizes at a substantially slower rate than metals at equivalent homologous temperatures. The recrystallized grain size is insensitive to the amount of prestrain for strains in the range of 10-50%.

  9. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  10. Microstructured silicon radiation detector

    Energy Technology Data Exchange (ETDEWEB)

    Okandan, Murat; Derzon, Mark S.; Draper, Bruce L.

    2017-03-14

    A radiation detector comprises a silicon body in which are defined vertical pores filled with a converter material and situated within silicon depletion regions. One or more charge-collection electrodes are arranged to collect current generated when secondary particles enter the silicon body through walls of the pores. The pores are disposed in low-density clusters, have a majority pore thickness of 5 .mu.m or less, and have a majority aspect ratio, defined as the ratio of pore depth to pore thickness, of at least 10.

  11. Emissivity of microstructured silicon.

    Science.gov (United States)

    Maloney, Patrick G; Smith, Peter; King, Vernon; Billman, Curtis; Winkler, Mark; Mazur, Eric

    2010-03-01

    Infrared transmittance and hemispherical-directional reflectance data from 2.5 to 25 microm on microstructured silicon surfaces have been measured, and spectral emissivity has been calculated for this wavelength range. Hemispherical-total emissivity is calculated for the samples and found to be 0.84 before a measurement-induced annealing and 0.65 after the measurement for the sulfur-doped sample. Secondary samples lack a measurement-induced anneal, and reasons for this discrepancy are presented. Emissivity numbers are plotted and compared with a silicon substrate, and Aeroglaze Z306 black paint. Use of microstructured silicon as a blackbody or microbolometer surface is modeled and presented, respectively.

  12. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  13. Integrated silicon optoelectronics

    CERN Document Server

    Zimmermann, Horst

    2000-01-01

    'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

  14. Silicon microfabricated beam expander

    Science.gov (United States)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-03-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  15. Silicon microfabricated beam expander

    Energy Technology Data Exchange (ETDEWEB)

    Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

    2015-03-30

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  16. Neuromorphic Silicon Photonics

    CERN Document Server

    Tait, Alexander N; de Lima, Thomas Ferreira; Wu, Allie X; Nahmias, Mitchell A; Shastri, Bhavin J; Prucnal, Paul R

    2016-01-01

    We report first observations of an integrated analog photonic network, in which connections are configured by microring weight banks, as well as the first use of electro-optic modulators as photonic neurons. A mathematical isomorphism between the silicon photonic circuit and a continuous neural model is demonstrated through dynamical bifurcation analysis. Exploiting this isomorphism, existing neural engineering tools can be adapted to silicon photonic information processing systems. A 49-node silicon photonic neural network programmed using a "neural compiler" is simulated and predicted to outperform a conventional approach 1,960-fold in a toy differential system emulation task. Photonic neural networks leveraging silicon photonic platforms could access new regimes of ultrafast information processing for radio, control, and scientific computing.

  17. Off-current in polycrystalline silicon thin film transistors: An analysis of the thermally generated component

    Science.gov (United States)

    Pecora, A.; Schillizzi, M.; Tallarida, G.; Fortunato, G.; Reita, C.; Migliorato, P.

    1995-04-01

    The thermal generation component of polycrystalline silicon TFTs off-current is analysed experimentally and theoretically. In order to minimize the field-enhanced component of the leakage current, hot-hole injection, obtained by stressing the device at negative gate voltage and high source-drain voltage, has been used to reduce the electric field at the drain junction. After stress, the electrical characteristics in the off-regime are channel length independent and do not depend on gate voltage. This behaviour has been associated with the thermal generation-recombination processes occurring at the drain junction. Two-dimensional numerical simulations have been carried out with the program HFIELD, which has been modified to take into account the presence of gap states in polysilicon, and to incorporate the thermal generation-recombination processes by using the Shockley-Read-Hall statistics. Numerical simulations confirm that the generation occurs in the depletion region of the drain junction. The experimental Id- Vds characteristics measured at negative gate voltage have been compared with the calculated characteristics. The best fit with the experimental data was obtained only by using a rather short carrier lifetime (10 -12 s). The simulations indicate that a decrease of the density of states produces a lower off-current owing to a longer carrier lifetime and to a reduction of the drain junction depletion layer.

  18. The DELPHI silicon tracker

    CERN Document Server

    Pernegger, H

    1997-01-01

    The DELPHI collaboration has upgraded the Silicon Vertex Detector in order to cope with the physics requirements for LEP200. The new detector consists of a barrel section with three layers of microstrip detectors and a forward extension made of hybrid pixel and large pitch strip detectors. The layout of the detector and the techniques used for the different parts of the new silicon detector shall be described.

  19. Dissolution and regeneration of microcrystalline cellulose in 1-ethyl-3-methylimidazolium diethylphosphate%微晶纤维素在EMIM-DEP中的溶解与再生

    Institute of Scientific and Technical Information of China (English)

    陶伟娜; 王少君; 李飞

    2012-01-01

    1-Ethyl-3-methylimidazolium diethylphosphate (EMIM-DEP) is synthesized with microwave method and is used to dissolve microcrystalline cellulose in this study. Its dissolution process is observed by polarizing microscope. With the rise of temperature the solubility of cellulose increases. Ultrasonic auxiliary can improve well the solubility of microcrystalline cellulose in ionic liquids. The regenerated cellulose is characterized by FT-IR, XRD, SEM and TGA. The results show that the microcrystalline cellulose in EMIM-DEP is dissolved directly without derivative reaction. The regenerated cellulose is changed from cellulose I into cellulose II in crystal style. Recovered ionic liquid has no change in structure and can be reused with good dissolving ability for microcrystalline cellulose.%通过微波法合成1-乙基-3-甲基咪唑磷酸二乙酯离子液体(EMIM-DEP)并用其溶解微晶纤维素.用偏光显微镜观察微晶纤维素在离子液体中的溶解.随温度的升高纤维素的溶解度增加,超声辅助可以很好地提高微晶纤维素在离子液体中的溶解度.溶解之后再生的纤维素通过红外光谱(FT-IR)、X-射线衍射(XRD)、扫描电镜(SEM)和热重分析(TGA)表征,结果显示微晶纤维素在EMIM-DEP中是直接溶解没有发生衍生反应;再生的纤维素晶型由纤维素Ⅰ型转化为纤维素Ⅱ型;回收后的离子液体结构没发生变化,重复利用仍保持较好的溶解微晶纤维素的能力.

  20. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  1. Silicon-Based Light Sources for Silicon Integrated Circuits

    Directory of Open Access Journals (Sweden)

    L. Pavesi

    2008-01-01

    Full Text Available Silicon the material per excellence for electronics is not used for sourcing light due to the lack of efficient light emitters and lasers. In this review, after having introduced the basics on lasing, I will discuss the physical reasons why silicon is not a laser material and the approaches to make it lasing. I will start with bulk silicon, then I will discuss silicon nanocrystals and Er3+ coupled silicon nanocrystals where significant advances have been done in the past and can be expected in the near future. I will conclude with an optimistic note on silicon lasing.

  2. Oxygen defect processes in silicon and silicon germanium

    Energy Technology Data Exchange (ETDEWEB)

    Chroneos, A., E-mail: alexander.chroneos@imperial.ac.uk [Faculty of Engineering and Computing, Coventry University, Priory Street, Coventry CV1 5FB (United Kingdom); Department of Materials, Imperial College London, London SW7 2BP (United Kingdom); Sgourou, E. N.; Londos, C. A. [Solid State Section, Physics Department, University of Athens, Panepistimiopolis, Zografos, 157 84 Athens (Greece); Schwingenschlögl, U. [PSE Division, KAUST, Thuwal 23955-6900 (Saudi Arabia)

    2015-06-15

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  3. EPR response of sucrose and microcrystalline cellulose to measure high doses of gamma radiation; Respuesta EPR de sacarosa y celulosa micro cristalina para medir altas dosis de radiacion gamma

    Energy Technology Data Exchange (ETDEWEB)

    Torijano, E.; Cruz, L.; Gutierrez, G.; Azorin, J.; Aguirre, F. [Universidad Autonoma Metropolitana, Unidad Iztapalapa, Av. San Rafael Atlixco 186, Col. Vicentina, 09340 Mexico D. F. (Mexico); Cruz Z, E., E-mail: eftc@xanum.uam.mx [UNAM, Instituto de Ciencias Nucleares, Circuito Exterior, Ciudad Universitaria, 04510 Mexico D. F. (Mexico)

    2015-10-15

    Solid dosimeters of sucrose and microcrystalline cellulose (Avicel Ph-102) were prepared, following the same process, in order to compare their EPR response against that of the l-alanine dosimeters considered as reference. All lots of dosimeters were irradiated with gamma radiation in Gamma beam irradiator with 8 kGy/h of the Nuclear Sciences Institute of UNAM. Doses ranged from 1 to 10 kGy respectively. We found that both the response of sucrose as microcrystalline cellulose were linear; however, the response intensity was, on average, twenty times more for sucrose. Comparing this against the EPR response of l-alanine in the range of doses, it was found that the response to sucrose is a third part; and microcrystalline cellulose is a sixtieth, approximately. The results agree with those found in the literature for sucrose, leaving open the possibility of investigating other dosage ranges for cellulose. (Author)

  4. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  5. 微晶纤维素在离子液体[Bmim]Cl中的溶解与再生%Dissolution and regeneration of microcrystalline cellulose in ionic liquid [Bmim]Cl

    Institute of Scientific and Technical Information of China (English)

    邹鑫; 杨继涛; 胡国新

    2013-01-01

    利用氯化1-丁基-3-甲基咪唑([Bmim]Cl)溶解微晶纤维素,考察了温度、时间以及[Bmim]Cl与微晶纤维素质量比对微晶纤维素在[Bmim]Cl中的溶解率的影响.研究结果表明,[Bmim]Cl与微晶纤维素质量比为5∶0.5,溶解温度为90℃,溶解时间为1.5 h时,微晶纤维素在[Bmim]Cl中的溶解率最高,为48.7%.同时,借助扫描电镜和X射线衍射仪对再生纤维素的形貌和结晶性进行了分析,结果表明,微晶纤维素在[Bmim]Cl中的溶解属于直接溶解,结晶强度减弱.%1-Butyl-3-methylimidazolium chloride ([Bmim]Cl) was used to dissolve microcrystalline cellulose.Temperature,time and mass ratio of [Bmim]Cl and microcrystalline cellulose which had influence on the dissolving rate of microcrystalline cellulose were investigated.The results showed that the highest dissolving rate of microcrystalline cellulose in [Bmim]Cl achieved 48.7% when the mass ratio of [Bmim]Cl and microcrystalline cellulose was 5:0.5,solution temperature was 90 ℃,lysis time was 1.5 h.The appearance and crystallinity of regenerated cellulose were analyzed by using scanning electron microscope and X-ray diffraction.The results showed that the dissolution of microcrystalline cellulose in [Bmim]Cl was a physical process,and the regenerated cellulose exhibited declining of the crystallization intensity.

  6. Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor

    Science.gov (United States)

    Liu, Yu-Rong; Zhao, Gao-Wei; Lai, Pai-To; Yao, Ruo-He

    2016-08-01

    Si-doped zinc oxide (SZO) thin films are deposited by using a co-sputtering method, and used as the channel active layers of ZnO-based TFTs with single and dual active layer structures. The effects of silicon content on the optical transmittance of the SZO thin film and electrical properties of the SZO TFT are investigated. Moreover, the electrical performances and bias-stress stabilities of the single- and dual-active-layer TFTs are investigated and compared to reveal the effects of the Si doping and dual-active-layer structure. The average transmittances of all the SZO films are about 90% in the visible light region of 400 nm-800 nm, and the optical band gap of the SZO film gradually increases with increasing Si content. The Si-doping can effectively suppress the grain growth of ZnO, revealed by atomic force microscope analysis. Compared with that of the undoped ZnO TFT, the off-state current of the SZO TFT is reduced by more than two orders of magnitude and it is 1.5 × 10-12 A, and thus the on/off current ratio is increased by more than two orders of magnitude. In summary, the SZO/ZnO TFT with dual-active-layer structure exhibits a high on/off current ratio of 4.0 × 106 and superior stability under gate-bias and drain-bias stress. Projected supported by the National Natural Science Foundation of China (Grant Nos. 61076113 and 61274085), the Natural Science Foundation of Guangdong Province (Grant No. 2016A030313474), and the University Development Fund (Nanotechnology Research Institute, Grant No. 00600009) of the University of Hong Kong, China.

  7. Bond Angles in the Crystalline Silicon/Silicon Nitride Interface

    Science.gov (United States)

    Leonard, Robert H.; Bachlechner, Martina E.

    2006-03-01

    Silicon nitride deposited on a silicon substrate has major applications in both dielectric layers in microelectronics and as antireflection and passivation coatings in photovoltaic applications. Molecular dynamic simulations are performed to investigate the influence of temperature and rate of externally applied strain on the structural and mechanical properties of the silicon/silicon nitride interface. Bond-angles between various atom types in the system are used to find and understand more about the mechanisms leading to the failure of the crystal. Ideally in crystalline silicon nitride, bond angles of 109.5 occur when a silicon atom is at the vertex and 120 angles occur when a nitrogen atom is at the vertex. The comparison of the calculated angles to the ideal values give information on the mechanisms of failure in silicon/silicon nitride system.

  8. Performance Improvement of Microcrystalline p-SiC/i-Si/n-Si Thin Film Solar Cells by Using Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Hsin-Ying Lee

    2014-01-01

    Full Text Available The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1 to 512 cm−1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD results, the microcrystalline i-Si films with (111, (220, and (311 diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2 to 18.16 mA/cm2 and from 6.89% to 8.58%, respectively.

  9. Influence of low-density polyethylene on the thermal characteristics and crystallinity of high melting point macro- and micro-crystalline waxes

    Energy Technology Data Exchange (ETDEWEB)

    Zaky, Magdy T., E-mail: magdytadrous@hotmail.com [Petroleum Refining Division, Egyptian Petroleum Research Institute (EPRI), 1-Ahmed El-Zomor Street, Hai Al-Zehour, Nasr City, P.O. Box 11727, Cairo (Egypt); Mohamed, Nermen H. [Petroleum Refining Division, Egyptian Petroleum Research Institute (EPRI), 1-Ahmed El-Zomor Street, Hai Al-Zehour, Nasr City, P.O. Box 11727, Cairo (Egypt)

    2010-02-20

    The influence of low-density polyethylene on the thermal characteristics and the crystallinity of high melting point macro- and micro-crystalline waxes were investigated. The samples were prepared through melt blending using mechanical stirrer. The thermal characteristics of the blended samples were determined using differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA). The crystallinity of the samples was obtained using X-ray diffraction analyzer (XRD). The observations are discussed in terms of possible changes when the polymer is mixed with two types of waxes. The wax-polymer miscibility differed with the type of the wax and the amount of polymer mixed into the wax. Also, the crystallinity and congealing point of the waxes differed with the amount of polymer mixed into the wax. Moreover, the resulting data indicate that, blending of polymer with high melting point micro-crystalline wax elevates its melting point to reach the limits of high melting point ceresin waxes which can be used in different industrial applications.

  10. Performance improvement of silicon solar cells by nanoporous silicon coating

    Directory of Open Access Journals (Sweden)

    Dzhafarov T. D.

    2012-04-01

    Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

  11. Spintronics: Silicon takes a spin

    NARCIS (Netherlands)

    Jansen, Ron

    2007-01-01

    An efficient way to transport electron spins from a ferromagnet into silicon essentially makes silicon magnetic, and provides an exciting step towards integration of magnetism and mainstream semiconductor electronics.

  12. Synthesis of silicon carbide films by combined implantation with sputtering techniques

    Science.gov (United States)

    Li, Gaobao; Zhang, Jizhong; Meng, Qingli; Li, Wenzhi

    2007-08-01

    Silicon carbide (SiC) films were synthesized by combined metal vapor vacuum arc (MEVVA) ion implantation with ion beam assisted deposition (IBAD) techniques. Carbon ions with 40 keV energy were implanted into Si(1 0 0) substrates at ion fluence of 5 × 10 16 ions/cm 2. Then silicon and carbon atoms were co-sputtered on the Si(1 0 0) substrate surface, at the same time the samples underwent assistant Ar-ion irradiation at 20 keV energy. A group of samples with substrate temperatures ranging from 400 to 600 °C were used to analyze the effect of temperature on formation of the SiC film. Influence of the assistant Ar-ion irradiation was also investigated. The structure, morphology and mechanical properties of the deposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and nanoindentation, respectively. The bond configurations were obtained from IR absorption and Raman spectroscopy. The experimental results indicate that microcrystalline SiC films were synthesized at 600 °C. The substrate temperature and assistant Ar-ion irradiation played a key role in the process. The assistant Ar-ion irradiation also helps increasing the nanohardness and bulk modulus of the SiC films. The best values of nanohardness and bulk modulus were 24.1 and 282.6 GPa, respectively.

  13. Synthesis of silicon carbide films by combined implantation with sputtering techniques

    Energy Technology Data Exchange (ETDEWEB)

    Li Gaobao [Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Zhang Jizhong [Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); International Centre for Materials Physics, Chinese Academy of Sciences, Shenyang 110016 (China); State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)], E-mail: zjz@mail.tsinghua.edu.cn; Meng Qingli [Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Li Wenzhi [Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)

    2007-08-15

    Silicon carbide (SiC) films were synthesized by combined metal vapor vacuum arc (MEVVA) ion implantation with ion beam assisted deposition (IBAD) techniques. Carbon ions with 40 keV energy were implanted into Si(1 0 0) substrates at ion fluence of 5 x 10{sup 16} ions/cm{sup 2}. Then silicon and carbon atoms were co-sputtered on the Si(1 0 0) substrate surface, at the same time the samples underwent assistant Ar-ion irradiation at 20 keV energy. A group of samples with substrate temperatures ranging from 400 to 600 deg. C were used to analyze the effect of temperature on formation of the SiC film. Influence of the assistant Ar-ion irradiation was also investigated. The structure, morphology and mechanical properties of the deposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and nanoindentation, respectively. The bond configurations were obtained from IR absorption and Raman spectroscopy. The experimental results indicate that microcrystalline SiC films were synthesized at 600 deg. C. The substrate temperature and assistant Ar-ion irradiation played a key role in the process. The assistant Ar-ion irradiation also helps increasing the nanohardness and bulk modulus of the SiC films. The best values of nanohardness and bulk modulus were 24.1 and 282.6 GPa, respectively.

  14. Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    LU Wan-bing; YU Wei; WU Li-ping; CUI Shuang-kui; FU Guang-sheng

    2006-01-01

    Hydrogenated nanocrystalline silicon carbide (SiC) thin films were deposited on the single-crystal silicon substrate using the helicon wave plasma enhanced chemical vapor deposition (HW-PECVD) technique. The influences of magnetic field and hydrogen dilution ratio on the structures of SiC thin film were investigated with the atomic force microscopy (AFM), the Fourier transform infrared absorption (FTIR) and the transmission electron microscopy (TEM). The results indicate that the high plasma activity of the helicon wave mode proves to be a key factor to grow crystalline SiC thin films at a relative low substrate temperature. Also, the decrease in the grain sizes from the level of microcrystalline to that of nanocrystalline can be achieved by increasing the hydrogen dilution ratios. Transmission electron microscopy measurements reveal that the size of most nanocrystals in the film deposited under the higher hydrogen dilution ratios is smaller than the doubled Bohr radius of 3C-SiC (approximately 5.4 nm), and the light emission measurements also show a strong blue photoluminescence at the room temperature, which is considered to be caused by the quantum confinement effect of small-sized SiC nanocrystals.

  15. Optimization of plasma parameters for the production of silicon nano-crystals

    CERN Document Server

    Chaabane, N; Vach, H; Cabarrocas, P R I

    2003-01-01

    We use silane-hydrogen plasmas to synthesize silicon nano-crystals in the gas phase and thermophoresis to collect them onto a cooled substrate. To distinguish between nano-crystals formed in the plasma and those grown on the substrate, as a result of surface and subsurface reactions, we have simultaneously deposited films on a conventional substrate heated at 250 deg. C and on a second substrate cooled down to 90 deg. C. A series of samples deposited at various discharge pressures, in the range of 400 mTorr to 1.2 Torr, have been characterized by Raman spectroscopy and ellipsometry. At low pressure (400-500 mTorr), the films are amorphous on the cold substrate and micro-crystalline on the hot one. As pressure increases, gas phase reactions lead to the formation of nano-crystalline particles which are attracted by the cold substrate due to thermophoresis. Consequently, we obtain nano-crystalline silicon thin films on the cold substrate and amorphous thin films on the heated one in the pressure range of 600-900...

  16. Silicon thin films prepared in the transition region and their use in solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, S.; Raniero, L.; Fortunato, E.; Aguas, H.; Ferreira, I.; Martins, R. [Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, 2829-516 Caparica (Portugal); Liao, X.; Xu, Y.; Kong, G. [State Key Laboratory for Surface Physics, Institute of Semiconductors & amp; Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100083 (China)

    2006-11-23

    Diphasic silicon films (nc-Si/a-Si:H) have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the nc-Si/a-Si:H has higher photoconductivity ({sigma}{sub ph}), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. The blue shift for the stretching mode and red shift for the wagging mode in the IR spectra also show the variation of the microstructure. By using this kind of film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51% and a stabilized efficiency of 8.01% (AM1.5, 100mw/cm{sup 2}) at room temperature. (author)

  17. Thick silicon growth techniques

    Science.gov (United States)

    Bates, H. E.; Mlavsky, A. I.; Jewett, D. N.

    1973-01-01

    Hall mobility measurements on a number of single crystal silicon ribbons grown from graphite dies have shown some ribbons to have mobilities consistent with their resistivities. The behavior of other ribbons appears to be explained by the introduction of impurities of the opposite sign. Growth of a small single crystal silicon ribbon has been achieved from a beryllia dia. Residual internal stresses of the order of 7 to 18,000 psi have been determined to exist in some silicon ribbon, particularly those grown at rates in excess of 1 in./min. Growth experiments have continued toward definition of a configuration and parameters to provide a reasonable yield of single crystal ribbons. High vacuum outgassing of graphite dies and evacuation and backfilling of growth chambers have provided significant improvements in surface quality of ribbons grown from graphite dies.

  18. The electrophotonic silicon biosensor

    Science.gov (United States)

    Juan-Colás, José; Parkin, Alison; Dunn, Katherine E.; Scullion, Mark G.; Krauss, Thomas F.; Johnson, Steven D.

    2016-09-01

    The emergence of personalized and stratified medicine requires label-free, low-cost diagnostic technology capable of monitoring multiple disease biomarkers in parallel. Silicon photonic biosensors combine high-sensitivity analysis with scalable, low-cost manufacturing, but they tend to measure only a single biomarker and provide no information about their (bio)chemical activity. Here we introduce an electrochemical silicon photonic sensor capable of highly sensitive and multiparameter profiling of biomarkers. Our electrophotonic technology consists of microring resonators optimally n-doped to support high Q resonances alongside electrochemical processes in situ. The inclusion of electrochemical control enables site-selective immobilization of different biomolecules on individual microrings within a sensor array. The combination of photonic and electrochemical characterization also provides additional quantitative information and unique insight into chemical reactivity that is unavailable with photonic detection alone. By exploiting both the photonic and the electrical properties of silicon, the sensor opens new modalities for sensing on the microscale.

  19. Floating Silicon Method

    Energy Technology Data Exchange (ETDEWEB)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  20. Silicon containing copolymers

    CERN Document Server

    Amiri, Sahar; Amiri, Sanam

    2014-01-01

    Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible block copolymers?are described along with atom transfer radical polymerization (ATRP), a technique utilized to develop well-defined functional thermo reversible block copolymers. The brief also focuses on Polyrotaxanes and their great potential as stimulus-responsive materials which produce poly (dimethyl siloxane) (PDMS) based thermo reversible block copolymers.

  1. Silicon photonics: optical modulators

    Science.gov (United States)

    Reed, G. T.; Gardes, F. Y.; Hu, Youfang; Thomson, D.; Lever, L.; Kelsall, R.; Ikonic, Z.

    2010-01-01

    Silicon Photonics has the potential to revolutionise a whole raft of application areas. Currently, the main focus is on various forms of optical interconnects as this is a near term bottleneck for the computing industry, and hence a number of companies have also released products onto the market place. The adoption of silicon photonics for mass production will significantly benefit a range of other application areas. One of the key components that will enable silicon photonics to flourish in all of the potential application areas is a high performance optical modulator. An overview is given of the major Si photonics modulator research that has been pursued at the University of Surrey to date as well as a worldwide state of the art showing the trend and technology available. We will show the trend taken toward integration of optical and electronic components with the difficulties that are inherent in such a technology.

  2. Integrated Silicon Optoelectronics

    CERN Document Server

    Zimmermann, Horst K

    2010-01-01

    Integrated Silicon Optoelectronics synthesizes topics from optoelectronics and microelectronics. The book concentrates on silicon as the major base of modern semiconductor devices and circuits. Starting from the basics of optical emission and absorption, as well as from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed. Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included. The book, furthermore, contains a review of the newest state of research on eagerly anticipated silicon light emitters. In order to cover the topics comprehensively, also included are integrated waveguides, gratings, and optoelectronic power devices. Numerous elaborate illustrations facilitate and enhance comprehension. This extended edition will be of value to engineers, physicists, and scientists in industry and at universities. The book is also recommended to graduate student...

  3. Microgravity silicon zoning investigation

    Science.gov (United States)

    Kern, E. L.; Gill, G. L., Jr.

    1985-01-01

    The flow instabilities in floating zones of silicon were investigated and methods for investigation of these instabilities in microgravity were defined. Three principal tasks were involved: (1) characterization of the float zone in small diameter rods; (2) investigation of melt flow instabilities in circular melts in silicon disks; and (3) the development of a prototype of an apparatus that could be used in near term space experiments to investigate flow instabilities in a molten zone. It is shown that in a resistance heated zoner with 4 to 7 mm diameter silicon rods that the critical Marangoni number is about 1480 compared to a predicted value of 14 indicative that viable space experiments might be performed. The prototype float zone apparatus is built and specifications are prepared for a flight zoner should a decision be reached to proceed with a space flight experimental investigation.

  4. The LHCb Silicon Tracker

    Energy Technology Data Exchange (ETDEWEB)

    Tobin, Mark, E-mail: Mark.Tobin@epfl.ch

    2016-09-21

    The LHCb experiment is dedicated to the study of heavy flavour physics at the Large Hadron Collider (LHC). The primary goal of the experiment is to search for indirect evidence of new physics via measurements of CP violation and rare decays of beauty and charm hadrons. The LHCb detector has a large-area silicon micro-strip detector located upstream of a dipole magnet, and three tracking stations with silicon micro-strip detectors in the innermost region downstream of the magnet. These two sub-detectors form the LHCb Silicon Tracker (ST). This paper gives an overview of the performance and operation of the ST during LHC Run 1. Measurements of the observed radiation damage are shown and compared to the expectation from simulation.

  5. Neuromorphic silicon neuron circuits

    Directory of Open Access Journals (Sweden)

    Giacomo eIndiveri

    2011-05-01

    Full Text Available Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain-machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance based Hodgkin-Huxley models to bi-dimensional generalized adaptive Integrate and Fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips.

  6. The electrophotonic silicon biosensor

    Science.gov (United States)

    Juan-Colás, José; Parkin, Alison; Dunn, Katherine E.; Scullion, Mark G.; Krauss, Thomas F.; Johnson, Steven D.

    2016-01-01

    The emergence of personalized and stratified medicine requires label-free, low-cost diagnostic technology capable of monitoring multiple disease biomarkers in parallel. Silicon photonic biosensors combine high-sensitivity analysis with scalable, low-cost manufacturing, but they tend to measure only a single biomarker and provide no information about their (bio)chemical activity. Here we introduce an electrochemical silicon photonic sensor capable of highly sensitive and multiparameter profiling of biomarkers. Our electrophotonic technology consists of microring resonators optimally n-doped to support high Q resonances alongside electrochemical processes in situ. The inclusion of electrochemical control enables site-selective immobilization of different biomolecules on individual microrings within a sensor array. The combination of photonic and electrochemical characterization also provides additional quantitative information and unique insight into chemical reactivity that is unavailable with photonic detection alone. By exploiting both the photonic and the electrical properties of silicon, the sensor opens new modalities for sensing on the microscale. PMID:27624590

  7. Silicon microphones - a Danish perspective

    DEFF Research Database (Denmark)

    Bouwstra, Siebe; Storgaard-Larsen, Torben; Scheeper, Patrick

    1998-01-01

    Two application areas of microphones are discussed, those for precision measurement and those for hearing instruments. Silicon microphones are under investigation for both areas, and Danish industry plays a key role in both. The opportunities of silicon, as well as the challenges and expectations......, are discussed. For precision measurement the challenge for silicon is large, while for hearing instruments silicon seems to be very promising....

  8. Pain and microcrystalline arthritis

    Directory of Open Access Journals (Sweden)

    R. Ramonda

    2014-06-01

    Full Text Available Microcrystals are responsible for some of the most common and complex arthropathies which are often accompanied by intense, severe pain and inflammatory reactions. The main pathogens are crystals of monosodium urate (MSU, responsible for the gout, calcium pyrophosphate (CPP, which deposits also in various clinical forms of arthopathies, and basic calcium phosphate associated with osteoarthritis. In this context, the microcrystal arthritis is characterized by multiple, acute attacks followed by chronic pain, disability, impaired quality of life, and increased mortality. Given their chronic nature, they represent an ever more urgent public health problem. MSU and CPP crystals are also able to activate nociceptors. The pain in mycrocrystalline arthritis (MCA is an expression of the inflammatory process. In the course of these diseases there is an abundant release of inflammatory molecules, including prostaglandins 2 and kinins. Interleukin-1 represents the most important cytokine released during the crystal-induced inflammatory process. Therefore, clinically, pain is the most important component of MCA, which lead to functional impairment and disability in a large proportion of the population. It is fundamental to diagnose these diseases as early as possible, and to this aim, to identify appropriate and specific targets for a timely therapeutic intervention.

  9. Optical and Electrical Effects of p-type μc-SiOx:H in Thin-Film Silicon Solar Cells on Various Front Textures

    Directory of Open Access Journals (Sweden)

    Chao Zhang

    2014-01-01

    Full Text Available p-type hydrogenated microcrystalline silicon oxide (µc-SiOx:H was developed and implemented as a contact layer in hydrogenated amorphous silicon (a-Si:H single junction solar cells. Higher transparency, sufficient electrical conductivity, low ohmic contact to sputtered ZnO:Al, and tunable refractive index make p-type µc-SiOx:H a promising alternative to the commonly used p-type hydrogenated microcrystalline silicon (µc-Si:H contact layers. In this work, p-type µc-SiOx:H layers were fabricated with a conductivity of up to 10−2 S/cm and a Raman crystallinity of above 60%. Furthermore, we present p-type µc-SiOx:H films with a broad range of optical properties (2.1 eV < band gap E04<2.8 eV and 1.6 < refractive index n<2.6. These properties can be tuned by adapting deposition parameters, for example, the CO2/SiH4 deposition gas ratio. A conversion efficiency improvement of a-Si:H solar cells is achieved by applying p-type µc-SiOx:H contact layer compared to the standard p-type µc-Si:H contact layer. As another aspect, the influence of the front side texture on a-Si:H p-i-n solar cells with different p-type contact layers, µc-Si:H and µc-SiOx:H, is investigated. Furthermore, we discuss the correlation between the decrease of Voc and the cell surface area derived from AFM measurements.

  10. The Silicon Cube detector

    Energy Technology Data Exchange (ETDEWEB)

    Matea, I.; Adimi, N. [Centre d' Etudes Nucleaires de Bordeaux Gradignan - Universite Bordeaux 1 - UMR 5797, CNRS/IN2P3, Chemin du Solarium, BP 120, F-33175 Gradignan Cedex (France); Blank, B. [Centre d' Etudes Nucleaires de Bordeaux Gradignan - Universite Bordeaux 1 - UMR 5797, CNRS/IN2P3, Chemin du Solarium, BP 120, F-33175 Gradignan Cedex (France)], E-mail: blank@cenbg.in2p3.fr; Canchel, G.; Giovinazzo, J. [Centre d' Etudes Nucleaires de Bordeaux Gradignan - Universite Bordeaux 1 - UMR 5797, CNRS/IN2P3, Chemin du Solarium, BP 120, F-33175 Gradignan Cedex (France); Borge, M.J.G.; Dominguez-Reyes, R.; Tengblad, O. [Insto. Estructura de la Materia, CSIC, Serrano 113bis, E-28006 Madrid (Spain); Thomas, J.-C. [GANIL, CEA/DSM - CNRS/IN2P3, BP 55027, F-14076 Caen Cedex 5 (France)

    2009-08-21

    A new experimental device, the Silicon Cube detector, consisting of six double-sided silicon strip detectors placed in a compact geometry was developed at CENBG. Having a very good angular coverage and high granularity, it allows simultaneous measurements of energy and angular distributions of charged particles emitted from unbound nuclear states. In addition, large-volume Germanium detectors can be placed close to the collection point of the radioactive species to be studied. The setup is ideally suited for isotope separation on-line (ISOL)-type experiments to study multi-particle emitters and was tested during an experiment at the low-energy beam line of SPIRAL at GANIL.

  11. CMS silicon tracker developments

    Energy Technology Data Exchange (ETDEWEB)

    Civinini, C. E-mail: carlo.civinini@fi.infn.it; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Creanza, D.; D' Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell' Orso, R.; Della Marina, R.D.R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; Focardi, E.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B

    2002-01-21

    The CMS Silicon tracker consists of 70 m{sup 2} of microstrip sensors which design will be finalized at the end of 1999 on the basis of systematic studies of device characteristics as function of the most important parameters. A fundamental constraint comes from the fact that the detector has to be operated in a very hostile radiation environment with full efficiency. We present an overview of the current results and prospects for converging on a final set of parameters for the silicon tracker sensors.

  12. CMS silicon tracker developments

    CERN Document Server

    Civinini, C; Angarano, M M; Azzi, P; Babucci, E; Bacchetta, N; Bader, A; Bagliesi, G; Basti, A; Biggeri, U; Bilei, G M; Bisello, D; Boemi, D; Bosi, F; Borrello, L; Bozzi, C; Braibant, S; Breuker, Horst; Bruzzi, Mara; Buffini, A; Busoni, S; Candelori, A; Caner, A; Castaldi, R; Castro, A; Catacchini, E; Checcucci, B; Ciampolini, P; Creanza, D; D'Alessandro, R; Da Rold, M; Demaria, N; De Palma, M; Dell'Orso, R; Della Marina, R; Dutta, S; Eklund, C; Feld, L; Fiore, L; Focardi, E; French, M; Freudenreich, Klaus; Frey, A; Fürtjes, A; Giassi, A; Giorgi, M; Giraldo, A; Glessing, B; Gu, W H; Hall, G; Hammarström, R; Hebbeker, T; Honma, A; Hrubec, Josef; Huhtinen, M; Kaminski, A; Karimäki, V; König, S; Krammer, Manfred; Lariccia, P; Lenzi, M; Loreti, M; Lübelsmeyer, K; Lustermann, W; Mättig, P; Maggi, G; Mannelli, M; Mantovani, G C; Marchioro, A; Mariotti, C; Martignon, G; McEvoy, B; Meschini, M; Messineo, A; Migliore, E; My, S; Paccagnella, A; Palla, Fabrizio; Pandoulas, D; Papi, A; Parrini, G; Passeri, D; Pieri, M; Piperov, S; Potenza, R; Radicci, V; Raffaelli, F; Raymond, M; Santocchia, A; Schmitt, B; Selvaggi, G; Servoli, L; Sguazzoni, G; Siedling, R; Silvestris, L; Starodumov, Andrei; Stavitski, I; Stefanini, G; Surrow, B; Tempesta, P; Tonelli, G; Tricomi, A; Tuuva, T; Vannini, C; Verdini, P G; Viertel, Gert M; Xie, Z; Li Ya Hong; Watts, S; Wittmer, B

    2002-01-01

    The CMS Silicon tracker consists of 70 m/sup 2/ of microstrip sensors which design will be finalized at the end of 1999 on the basis of systematic studies of device characteristics as function of the most important parameters. A fundamental constraint comes from the fact that the detector has to be operated in a very hostile radiation environment with full efficiency. We present an overview of the current results and prospects for converging on a final set of parameters for the silicon tracker sensors. (9 refs).

  13. Irradiation Defects in Silicon Crystal

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The application of irradiation in silicon crystal is introduced.The defects caused by irradiation are reviewed and some major ways of studying defects in irradiated silicon are summarized.Furthermore the problems in the investigation of irradiated silicon are discussed as well as its properties.

  14. Silicon carbide reinforced silicon carbide composite

    Science.gov (United States)

    Lau, Sai-Kwing (Inventor); Calandra, Salvatore J. (Inventor); Ohnsorg, Roger W. (Inventor)

    2001-01-01

    This invention relates to a process comprising the steps of: a) providing a fiber preform comprising a non-oxide ceramic fiber with at least one coating, the coating comprising a coating element selected from the group consisting of carbon, nitrogen, aluminum and titanium, and the fiber having a degradation temperature of between 1400.degree. C. and 1450.degree. C., b) impregnating the preform with a slurry comprising silicon carbide particles and between 0.1 wt % and 3 wt % added carbon c) providing a cover mix comprising: i) an alloy comprising a metallic infiltrant and the coating element, and ii) a resin, d) placing the cover mix on at least a portion of the surface of the porous silicon carbide body, e) heating the cover mix to a temperature between 1410.degree. C. and 1450.degree. C. to melt the alloy, and f) infiltrating the fiber preform with the melted alloy for a time period of between 15 minutes and 240 minutes, to produce a ceramic fiber reinforced ceramic composite.

  15. Pair distribution functions of silicon/silicon nitride interfaces

    Science.gov (United States)

    Cao, Deng; Bachlechner, Martina E.

    2006-03-01

    Using molecular dynamics simulations, we investigate different mechanical and structural properties of the silicon/silicon nitride interface. One way to characterize the structure as tensile strain is applied parallel to the interface is to calculate pair distribution functions for specific atom types. The pair distribution function gives the probability of finding a pair of atoms a distance r apart, relative to the probability expected for a completely random distribution at the same density. The pair distribution functions for bulk silicon nitride reflect the fracture of the silicon nitride film at about 8 % and the fact that the centerpiece of the silicon nitride film returns to its original structure after fracture. The pair distribution functions for interface silicon atoms reveal the formation of bonds for originally unbound atom pairs, which is indicative of the interstitial-vacancy defect that causes failure in silicon.

  16. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    has been an obstacle for a simple realization of electro-optic modulators, and its indirect band gap has prevented the realization of efficient silicon light emitting diodes and lasers. Still, significant progress has been made in the past few years. Electro-optic modulators based on the free carrier...

  17. ALICE Silicon Strip Detector

    CERN Multimedia

    Nooren, G

    2013-01-01

    The Silicon Strip Detector (SSD) constitutes the two outermost layers of the Inner Tracking System (ITS) of the ALICE Experiment. The SSD plays a crucial role in the tracking of the particles produced in the collisions connecting the tracks from the external detectors (Time Projection Chamber) to the ITS. The SSD also contributes to the particle identification through the measurement of their energy loss.

  18. On nanostructured silicon success

    DEFF Research Database (Denmark)

    Sigmund, Ole; Jensen, Jakob Søndergaard; Frandsen, Lars Hagedorn

    2016-01-01

    Recent Letters by Piggott et al. 1 and Shen et al. 2 claim the smallest ever dielectric wave length and polarization splitters. The associated News & Views article by Aydin3 states that these works “are the first experimental demonstration of on-chip, silicon photonic components based on complex...

  19. Silicon Valley's Turnaround

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2006-01-01

    @@ During Silicon Valley's dramatic economic growth fueled by the Internet boom and business investment in information technology, employment in the region's high-tech sec tor tripled between 1995 and 2000. The economic boom gave rise to many new firms,drawing em ployees into high-tech jobs from other regions and other industries.

  20. Characterization of Silicon Carbide.

    Science.gov (United States)

    The various electrical and structural measurement techniques for silicon carbide are described. The electrical measurements include conductivity, resistivity, carrier concentration, mobility, doping energy levels, and lifetime. The structural measurements include polytype determination and crystalline perfection. Both bulk and epitaxial films are included.

  1. Composition Comprising Silicon Carbide

    Science.gov (United States)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy L. (Inventor)

    2012-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  2. ALICE Silicon Pixel Detector

    CERN Multimedia

    Manzari, V

    2013-01-01

    The Silicon Pixel Detector (SPD) forms the innermost two layers of the 6-layer barrel Inner Tracking System (ITS). The SPD plays a key role in the determination of the position of the primary collision and in the reconstruction of the secondary vertices from particle decays.

  3. OPAL Silicon Tungsten Luminometer

    CERN Multimedia

    OPAL was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The Silicon Tungsten Luminometer was part of OPAL's calorimeter which was used to measure the energy of particles. Most particles end their journey in calorimeters. These detectors measure the energy deposited when particles are slowed down and stopped.

  4. Silicon in beer and brewing.

    Science.gov (United States)

    Casey, Troy R; Bamforth, Charles W

    2010-04-15

    It has been claimed that beer is one of the richest sources of silicon in the diet; however, little is known of the relationship between silicon content and beer style and the manner in which beer is produced. The purpose of this study was to measure silicon in a diversity of beers and ascertain the grist selection and brewing factors that impact the level of silicon obtained in beer. Commercial beers ranged from 6.4 to 56.5 mg L(-1) in silicon. Products derived from a grist of barley tended to contain more silicon than did those from a wheat-based grist, likely because of the high levels of silica in the retained husk layer of barley. Hops contain substantially more silicon than does grain, but quantitatively hops make a much smaller contribution than malt to the production of beer and therefore relatively less silicon in beer derives from them. During brewing the vast majority of the silicon remains with the spent grains; however, aggressive treatment during wort production in the brewhouse leads to increased extraction of silicon into wort and much of this survives into beer. It is confirmed that beer is a very rich source of silicon. (c) 2010 Society of Chemical Industry.

  5. Identifying Electronic Properties Relevant to Improving the Performance and Stability of Amorphous Silicon Based Photovoltaic Cells: Final Subcontract Report, 27 November 2002--31 March 2005

    Energy Technology Data Exchange (ETDEWEB)

    Cohen, J. D.

    2005-11-01

    A major effort during this subcontract period has been to evaluate the microcrystalline Si material under development at United Solar Ovonics Corporation (USOC). This material is actually a hydrogenated nanocrystalline form of Si and it will be denoted in this report as nc-Si:H. Second, we continued our studies of the BP Solar high-growth samples. Third, we evaluated amorphous silicon-germanium alloys produced by the hot-wire chemical vapor deposition growth process. This method holds some potential for higher deposition rate Ge alloy materials with good electronic properties. In addition to these three major focus areas, we examined a couple of amorphous germanium (a-Ge:H) samples produced by the ECR method at Iowa State University. Our studies of the electron cyclotron resonance a-Ge:H indicated that the Iowa State a Ge:H material had quite superior electronic properties, both in terms of the drive-level capacitance profiling deduced defect densities, and the transient photocapacitance deduced Urbach energies. Also, we characterized several United Solar a Si:H samples deposited very close to the microcrystalline phase transition. These samples exhibited good electronic properties, with midgap defect densities slightly less than 1 x 1016 cm-3 in the fully light-degraded state.

  6. Research on High-Bandgap Materials and Amorphous Silicon-Based Solar Cells, Final Technical Report, 15 May 1994-15 January 1998

    Energy Technology Data Exchange (ETDEWEB)

    Schiff, E. A.; Gu, Q.; Jiang, L.; Lyou, J.; Nurdjaja, I.; Rao, P. (Department of Physics, Syracuse University)

    1998-12-28

    This report describes work performed by Syracuse University under this subcontract. Researchers developed a technique based on electroabsorption measurements for obtaining quantitative estimates of the built-in potential Vbi in a-Si:H-based heterostructure solar cells incorporating microcrystalline or a-SiC:H p layers. Using this new electroabsorption technique, researchers confirmed previous estimates of Vbi {yields} 1.0 V in a-Si:H solar cells with ''conventional'' intrinsic layers and either microcrystalline or a-SiC:H p layers. Researchers also explored the recent claim that light-soaking of a-Si:H substantially changes the polarized electroabsorption associated with interband optical transitions (and hence, not defect transitions). Researchers confirmed measurements of improved (5') hole drift mobilities in some specially prepared a-Si:H samples. Disturbingly, solar cells made with such materials did not show improved efficiencies. Researchers significantly clarified the relationship of ambipolar diffusion-length measurements to hole drift mobilities in a-Si:H, and have shown that the photocapacitance measurements can be interpreted in terms of hole drift mobilities in amorphous silicon. They also completed a survey of thin BP:H and BPC:H films prepared by plasma deposition using phosphine, diborane, trimethylboron, and hydrogen as precursor gases.

  7. Comparison of γ-irradiation with other pretreatments followed with simultaneous saccharification and fermentation on bioconversion of microcrystalline cellulose for bioethanol production.

    Science.gov (United States)

    Liu, Yun; Zhou, Hua; Wang, Shihui; Wang, Keqin; Su, Xiaojun

    2015-04-01

    The effect of γ-irradiation pretreatment was compared with other pretreatment methods including ionic liquids (ILs), 1% HCl, 1% H2SO4, acidic aqueous Ils (AA-ILs), on the bioconversion efficiency of microcrystalline cellulose (MCC) for bioethanol production. The efficiency of MCC pretreatment followed with simultaneous saccharification and fermentation (SSF) was firstly evaluated according to the variations of the irradiation-derived compounds and structure of MCC, as well as yeast growth curve and bioethanol yield. Results showed that the appropriate irradiation dose (891 kGy used in our work) could eliminate the negative effect of toxic irradiation-derived compounds on SSF for ethanol bioconversion with the yield value of 67%. Analyses of SEM, FT-IR, reducing sugar and bioethanol yield showed that the efficiency of pretreatment on MCC was ILs ≈ irradiation pretreatment > AA-ILs pretreatment > 1% HCl pretreatment > 1% H2SO4 pretreatment.

  8. Use of cellobiohydrolase-free cellulase blends for the hydrolysis of microcrystalline cellulose and sugarcane bagasse pretreated by either ball milling or ionic liquid [Emim][Ac].

    Science.gov (United States)

    Teixeira, Ricardo Sposina Sobral; da Silva, Ayla Sant'Ana; Kim, Han-Woo; Ishikawa, Kazuhiko; Endo, Takashi; Lee, Seung-Hwan; Bon, Elba P S

    2013-12-01

    This study investigated the requirement of cellobiohydrolases (CBH) for saccharification of microcrystalline cellulose and sugarcane bagasse pretreated either by ball milling (BM) or by ionic liquid (IL) [Emim][Ac]. Hydrolysis was done using CBH-free blends of Pyrococcus horikoshii endoglucanase (EG) plus Pyrococcus furiosus β-glucosidase (EGPh/BGPf) or Optimash™ BG while Acremonium Cellulase was used as control. IL-pretreated substrates were hydrolyzed more effectively by CBH-free enzymes than were the BM-pretreated substrates. IL-treatment decreased the crystallinity and increased the specific surface area (SSA), whereas BM-treatment decreased the crystallinity without increasing the SSA. The hydrolysis of IL-treated cellulose by EGPh/BGPf showed a saccharification rate of 3.92 g/Lh and a glucose yield of 81% within 9h. These results indicate the efficiency of CBH-free enzymes for the hydrolysis of IL-treated substrates. Copyright © 2013 Elsevier Ltd. All rights reserved.

  9. Enhanced Photocatalytic Activity of CdS-Decorated TiO2/Carbon Core-Shell Microspheres Derived from Microcrystalline Cellulose

    Directory of Open Access Journals (Sweden)

    Xin Liu

    2016-03-01

    Full Text Available The fabrication of reusable and biodegradation materials from renewable resources such as cellulose is essential for a sustainable world. The core-shell structured CdS-decorated TiO2/Carbon microspheres (CdS/TiO2/Carbon MS photocatalyst was synthesized with controlled hydrolysis and a novel sonochemical method. It was prepared by using crosslinked microcrystalline cellulose as the core, tetrabutyl titanate as the titania source and CdS as the photosensitizer. The morphology, chemical structure and properties of the obtained material were characterized by many means. Additionally, the photocatalytic activity of the CdS/TiO2/Carbon MS was evaluated by the photodegradation efficiency of Rhodamine B solution, which reached 95.24% under visible light irradiation. This study demonstrated the excellent photocatalytic performance of CdS/TiO2/Carbon MS, which might have promising applications in environmental treatments.

  10. Preparation of nanocellulose from micro-crystalline cellulose: The effect on the performance and properties of agar-based composite films.

    Science.gov (United States)

    Shankar, Shiv; Rhim, Jong-Whan

    2016-01-01

    A facile approach has been performed to prepare nanocellulose (NC) from micro-crystalline cellulose (MCC) and test their effect on the performance properties of agar-based composite films. The NC was characterized by STEM, XRD, FTIR, and TGA. The NC was well dispersed in distilled water after sonication and their size was in the range of 100-500nm. The XRD results revealed the crystallinity of NC. The crystallinity index of NC (0.71) was decreased compared to the MCC (0.81). The effect of NC or MCC content (1, 3, 5 and 10wt% based on agar) on the mechanical, water vapor permeability (WVP), and thermal properties of the composites were studied. The NC obtained from MCC can be used as a reinforcing agent for the preparation of biodegradable composites films for their potential use in the development of biodegradable food packaging materials.

  11. In vitro and in vivo studies on nanocrystalline Ti fabricated by equal channel angular pressing with microcrystalline CP Ti as control.

    Science.gov (United States)

    Nie, F L; Zheng, Y F; Wei, S C; Wang, D S; Yu, Z T; Salimgareeva, G K; Polyakov, A V; Valiev, R Z

    2013-06-01

    Bulk nanocrystalline Ti bars (Grade 4, Φ4 × 3000 mm(3)) were massively fabricated by equal channel angular pressing (ECAP) via follow-up conform scheme with the microcrystalline CP Ti as raw material. Homogeneous nanostructured crystals with the average grain size of 250 nm were identified for the ECAPed Ti, with extremely high tensile/fatigue strength (around 1240/620 MPa) and adorable elongation (more than 5%). Pronounced formation of bonelike apatite for the nanocrystalline Ti group after 14 days static immersion in simulated body fluids (SBF) reveals the prospective in vitro bioactive capability of fast calcification, whereas an estimated 17% increment in protein adsorption represents good bioaffinity of nanocrystalline Ti. The documentation onto the whole life circle of osteoblast cell lines (MG63) revealed the strong interactions and superior cellular functionalization when they are co-incubated with bulk nanocrystalline Ti sample. Moreover, thread-structured specimens were designed and implanted into the tibia of Beagles dogs till 12 weeks to study the in vivo responses between bone and metallic implant made of bulk nanocrystalline Ti, with the microcrystalline Ti as control. For the implanted nanostructured Ti group, neoformed bone around the implants underwent the whole-stage transformation proceeding from originally osteons or immature woven bone to mature lamellar bone (skeletonic trabecular), even with the remodeling being finished till 12 weeks. The phenomenal osseointegration of direct implant-bone contact can be revealed from the group of the ECAPed Ti without fibrous tissue encapsulation in the gap between the implant and autogenous bone.

  12. Synthesis and photoluminescence properties of microcrystalline Sr{sub 2}ZnWO{sub 6}:RE{sup 3+} (RE = Eu, Dy, Sm and Pr) phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Dabre, K.V. [Department of Physics, Arts, Commerce and Science College, Koradi, Nagpur 441111 (India); Park, K. [Faculty of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 143-747 (Korea, Republic of); Dhoble, S.J., E-mail: sjdhoble@rediffmail.com [Department of Physics, R.T.M. Nagpur University, Nagpur 440033 (India)

    2014-12-25

    Graphical abstract: CIE chromaticity coordinate diagram (1931) indicating different colors of Sr{sub 2}ZnWO{sub 6}:RE{sup 3+} (RE = Eu (a), Dy (b and c), Sm (d–f) and Pr (g and h)) phosphor under different excitation 466 nm (a), 312 nm (b), 454 nm (c), 313 nm (d), 408 nm (e), 482 nm (f), 315 nm (g) and 450 nm (h). - Highlights: • Microcrystalline Sr{sub 2}ZnWO{sub 6}:RE{sup 3+} (RE = Eu, Dy, Sm and Pr) phosphors were synthesized by solid state method. • Photoluminescence properties of phosphor were investigated. • Color of the phosphor for different excitation has been verified by chromaticity diagram. • The host absorption and energy transfer were investigated. - Abstract: The novel microcrystalline Sr{sub 2}ZnWO{sub 6}:RE{sup 3+} (RE = Eu, Dy, Sm and Pr) phosphors were synthesized by solid-state reaction method at 1250 °C and their photoluminescence properties were investigated. The Eu{sup 3+} and Dy{sup 3+} activated phosphors show intense red (616 nm) and yellow (574 nm) emission respectively; which indicate that the rare earth ions are substituted at non-centrosymmetric site in the host lattice. Near white (Dy{sup 3+}) and reddish-orange (Sm{sup 3+}) emissions of rare earth ions in the host lattice show strong host absorption and energy transfer from the host to activator ion. Pr{sup 3+} activated phosphor shows a series of emission peaks in the visible region with the most intense peak in the blue region at 491 and 499 nm.

  13. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  14. A silicon electromechanical photodetector

    CERN Document Server

    Tallur, Siddharth

    2013-01-01

    Opto-mechanical systems have enabled wide-band optical frequency conversion and multi-channel all-optical radio frequency amplification. Realization of an on-chip silicon communication platform is limited by photodetectors needed to convert optical information to electrical signals for further signal processing. In this paper we present a coupled silicon micro-resonator, which converts near-IR optical intensity modulation at 174.2MHz and 1.198GHz into motional electrical current. This device emulates a photodetector which detects intensity modulation of continuous wave laser light in the full-width-at-half-maximum bandwidth of the mechanical resonance. The resonant principle of operation eliminates dark current challenges associated with convetional photodetectors.

  15. The CMS silicon tracker

    Energy Technology Data Exchange (ETDEWEB)

    Focardi, E. E-mail: focardi@pi.infn.it; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B; Ciampolini, P.; Civinini, C.; Creanza, D.; D' Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell' Orso, R.; Della Marina, R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Leubelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B.Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Rizzo, F.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B

    2000-10-11

    This paper describes the Silicon microstrip Tracker of the CMS experiment at LHC. It consists of a barrel part with 5 layers and two endcaps with 10 disks each. About 10 000 single-sided equivalent modules have to be built, each one carrying two daisy-chained silicon detectors and their front-end electronics. Back-to-back modules are used to read-out the radial coordinate. The tracker will be operated in an environment kept at a temperature of T=-10 deg. C to minimize the Si sensors radiation damage. Heavily irradiated detectors will be safely operated due to the high-voltage capability of the sensors. Full-size mechanical prototypes have been built to check the system aspects before starting the construction.

  16. Superhydrophobic Porous Silicon Surfaces

    Directory of Open Access Journals (Sweden)

    Paolo NENZI

    2011-12-01

    Full Text Available In this paper, we present an inexpensive technique to produce superhydrophobic surfaces from porous silicon. Superhydrophobic surfaces are a key technology for their ability to reduce friction losses in microchannels and their self cleaning properties. The morphology of a p-type silicon wafer is modified by a electrochemical wet etch to produce pores with controlled size and distribution and coated with a silane hydrophobic layer. Surface morphology is characterized by means of scanning electron microscope images. Large contact angles are observed on such surfaces and the results are compared with classical wetting models (Cassie and Wenzel suggesting a mixed Wenzel-Cassie behavior. The presented technique represents a cost-effective means for friction reduction in microfluidic applications, such as lab-on-a-chip.

  17. Electron beam silicon purification

    Energy Technology Data Exchange (ETDEWEB)

    Kravtsov, Anatoly [SIA ' ' KEPP EU' ' , Riga (Latvia); Kravtsov, Alexey [' ' KEPP-service' ' Ltd., Moscow (Russian Federation)

    2014-11-15

    Purification of heavily doped electronic grade silicon by evaporation of N-type impurities with electron beam heating was investigated in process with a batch weight up to 50 kilos. Effective temperature of the melt, an indicative parameter suitable for purification process characterization was calculated and appeared to be stable for different load weight processes. Purified material was successfully approbated in standard CZ processes of three different companies. Each company used its standard process and obtained CZ monocrystals applicable for photovoltaic application. These facts enable process to be successfully scaled up to commercial volumes (150-300 kg) and yield solar grade silicon. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Haematic silicon in drowning.

    Science.gov (United States)

    Pierucci, Giovanni; Merlano, Federica; Chen, Yao; Sturini, Michela; Maraschi, Federica; Profumo, Antonella

    2016-04-01

    The aim of this paper was to evaluate silicon (Si) concentration in human whole ventricular blood as a further potential chemical marker in the diagnosis of drowning. We employed an acidic digestion for the extraction of soluble Si, and an alkaline digestion for the determination of total Si, including particulate matter, both arising from drowning medium. 29 suspected drowning situations, 24 in fresh water (Fw) and 5 in seawater (Sw), were examined. The difference in Si concentration between the left and right ventricular blood (Si ΔL-R) was measured and alkaline Si ΔL-R seems, indeed, a potentially significant complementary tool in the diagnosis of Fw drowning, because insoluble silicon fraction does not undergo hemo-dilution or hemo-concentration, and the ΔL-R is not affected by exogenous factors. In spite of the limited number of cases investigated, a good correlation was observed between the analytical results and the macro-microscopic autoptic findings.

  19. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  20. Building China's Silicon Valley

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    @@ Ellis Rahhal and Andrew Schorr sit across from each other in the minimalist office of their tech startup,all clean lines and white linoleum floors.A pair of toothbrushes hint at many a late night hunched over their computers.Outside the window,the sun is slowly setting behind jagged mountains.The scene is classic Silicon Valley.But Rahhal and Schorr aren't in California.They're in suburban Beijing.

  1. Silicon Containing Photoresists.

    Science.gov (United States)

    1987-11-13

    generation of high resolution patterns. The vast majority of the commercial positive photoresists are comprised of a base soluble Novolac type resin (Cresol...plays a passive role. The generation of silicon containing Novolac- type resins represents one such effort. Workers at AT&T Bell Labs have prepared a...and formaldehyde (20). The silylated Novolac type resins were designed for use with substituted 1,2-napthoquinone-2-diazide sensitizers employed in

  2. Bringing Silicon Valley inside.

    Science.gov (United States)

    Hamel, G

    1999-01-01

    In 1998, Silicon Valley companies produced 41 IPOs, which by January 1999 had a combined market capitalization of $27 billion--that works out to $54,000 in new wealth creation per worker in a single year. Multiply the number of employees in your company by $54,000. Did your business create that much new wealth last year? Half that amount? It's not a group of geniuses generating such riches. It's a business model. In Silicon Valley, ideas, capital, and talent circulate freely, gathering into whatever combinations are most likely to generate innovation and wealth. Unlike most traditional companies, which spend their energy in resource allocation--a system designed to avoid failure--the Valley operates through resource attraction--a system that nurtures innovation. In a traditional company, people with innovative ideas must go hat in hand to the guardians of the old ideas for funding and for staff. But in Silicon Valley, a slew of venture capitalists vie to attract the best new ideas, infusing relatively small amounts of capital into a portfolio of ventures. And talent is free to go to the companies offering the most exhilarating work and the greatest potential rewards. It should actually be easier for large, traditional companies to set up similar markets for capital, ideas, and talent internally. After all, big companies often already have extensive capital, marketing, and distribution resources, and a first crack at the talent in their own ranks. And some of them are doing it. The choice is yours--you can do your best to make sure you never put a dollar of capital at risk, or you can tap into the kind of wealth that's being created every day in Silicon Valley.

  3. Silicon photonics manufacturing.

    Science.gov (United States)

    Zortman, William A; Trotter, Douglas C; Watts, Michael R

    2010-11-08

    Most demonstrations in silicon photonics are done with single devices that are targeted for use in future systems. One of the costs of operating multiple devices concurrently on a chip in a system application is the power needed to properly space resonant device frequencies on a system's frequency grid. We asses this power requirement by quantifying the source and impact of process induced resonant frequency variation for microdisk resonators across individual die, entire wafers and wafer lots for separate process runs. Additionally we introduce a new technique, utilizing the Transverse Electric (TE) and Transverse Magnetic (TM) modes in microdisks, to extract thickness and width variations across wafers and dice. Through our analysis we find that a standard six inch Silicon on Insulator (SOI) 0.35 μm process controls microdisk resonant frequencies for the TE fundamental resonances to within 1 THz across a wafer and 105 GHz within a single die. Based on demonstrated thermal tuner technology, a stable manufacturing process exhibiting this level of variation can limit the resonance trimming power per resonant device to 231 μW. Taken in conjunction with the power to compensate for thermal environmental variations, the expected power requirement to compensate for fabrication-induced non-uniformities is 17% of that total. This leads to the prediction that thermal tuning efficiency is likely to have the most dominant impact on the overall power budget of silicon photonics resonator technology.

  4. Silicon photonics fundamentals and devices

    CERN Document Server

    Deen, M Jamal

    2012-01-01

    The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

  5. Stabilization of elusive silicon oxides.

    Science.gov (United States)

    Wang, Yuzhong; Chen, Mingwei; Xie, Yaoming; Wei, Pingrong; Schaefer, Henry F; Schleyer, Paul von R; Robinson, Gregory H

    2015-06-01

    Molecular SiO2 and other simple silicon oxides have remained elusive despite the indispensable use of silicon dioxide materials in advanced electronic devices. Owing to the great reactivity of silicon-oxygen double bonds, as well as the low oxidation state of silicon atoms, the chemistry of simple silicon oxides is essentially unknown. We now report that the soluble disilicon compound, L:Si=Si:L (where L: = :C{N(2,6-(i)Pr2C6H3)CH}2), can be directly oxidized by N2O and O2 to give the carbene-stabilized Si2O3 and Si2O4 moieties, respectively. The nature of the silicon oxide units in these compounds is probed by spectroscopic methods, complementary computations and single-crystal X-ray diffraction.

  6. Radiation Hardening of Silicon Detectors

    CERN Multimedia

    Leroy, C; Glaser, M

    2002-01-01

    %RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

  7. Preparation of high-quality hydrogenated amorphous silicon film with a new microwave electron cyclotron resonance chemical vapour deposition system assisted with hot wire

    Institute of Scientific and Technical Information of China (English)

    Zhu Xiu-Hong; Chen Guang-Hua; Yin Sheng-Yi; Rong Yan-Dong; Zhang Wen-Li; Hu Yue-Hui

    2005-01-01

    The preparation of high-quality hydrogenated amorphous silicon (a-Si:H) film with a new microwave electron cyclotron resonance-chemical vapour deposition (MWECR-CVD) system assisted with hot wire is presented. In this system the hot wire plays an important role in perfecting the microstructure as well as improving the stability and the optoelectronic properties of the a-Si:H film. The experimental results indicate that in the microstructure of the a-Si:H film, the concentration of dihydride is decreased and a trace of microcrystalline occurs, which is useful to improve its stability, and that in the optoelectronic properties of the a-Si:H film, the deposition rate reaches above 2.0nm/s and the photosensitivity increases up to 4.71× 105.

  8. Silicon processing for photovoltaics II

    CERN Document Server

    Khattak, CP

    2012-01-01

    The processing of semiconductor silicon for manufacturing low cost photovoltaic products has been a field of increasing activity over the past decade and a number of papers have been published in the technical literature. This volume presents comprehensive, in-depth reviews on some of the key technologies developed for processing silicon for photovoltaic applications. It is complementary to Volume 5 in this series and together they provide the only collection of reviews in silicon photovoltaics available.The volume contains papers on: the effect of introducing grain boundaries in silicon; the

  9. Laboratory course on silicon sensors

    CERN Document Server

    Crescio, E; Roe, S; Rudge, A

    2003-01-01

    The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

  10. Single crystalline mesoporous silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Hochbaum, Allon; Dargas, Daniel; Hwang, Yun Jeong; Yang, Peidong

    2009-08-18

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. The photoluminescence of these nanowires suggest they are composed of crystalline silicon with small enough dimensions such that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices. A better understanding of this electroless route to mesoporous silicon could lead to facile and general syntheses of different narrow bandgap semiconductor nanostructures for various applications.

  11. Social Networks in Silicon Valley

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2006-01-01

    @@ Social network is a dominant, distinguishing characteristic of Silicon Valley. Because innovation entails coping with a high degree of uncertainty,such innovation is particularly dependent on networks.

  12. Large Brillouin Amplification in Silicon

    CERN Document Server

    Kittlaus, Eric A; Rakich, Peter T

    2015-01-01

    Strong Brillouin coupling has only recently been realized in silicon using a new class of optomechanical waveguides that yield both optical and phononic confinement. Despite these major advances, appreciable Brillouin amplification has yet to be observed in silicon. Using a new membrane-suspended silicon waveguide we report large Brillouin amplification for the first time, reaching levels greater than 5 dB for modest pump powers, and demonstrate a record low (5 mW) threshold for net amplification. This work represents a crucial advance necessary to realize high-performance Brillouin lasers and amplifiers in silicon.

  13. Solar silicon from directional solidification of MG silicon produced via the silicon carbide route

    Science.gov (United States)

    Rustioni, M.; Margadonna, D.; Pirazzi, R.; Pizzini, S.

    1986-01-01

    A process of metallurgical grade (MG) silicon production is presented which appears particularly suitable for photovoltaic (PV) applications. The MG silicon is prepared in a 240 KVA, three electrode submerged arc furnace, starting from high grade quartz and high purity silicon carbide. The silicon smelted from the arc furnace was shown to be sufficiently pure to be directionally solidified to 10 to 15 kg. After grinding and acid leaching, had a material yield larger than 90%. With a MG silicon feedstock containing 3 ppmw B, 290 ppmw Fe, 190 ppmw Ti, and 170 ppmw Al, blended with 50% of off grade electronic grade (EG) silicon to reconduct the boron content to a concentration acceptable for solar cell fabrication, the 99% of deep level impurities were concentrated in the last 5% of the ingot. Quite remarkably this material has OCV values higher tham 540 mV and no appreciable shorts due to SiC particles.

  14. Silicon on insulator with active buried regions

    Science.gov (United States)

    McCarthy, A.M.

    1996-01-30

    A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

  15. New process of silicon carbide purification intended for silicon passivation

    Science.gov (United States)

    Barbouche, M.; Zaghouani, R. Benabderrahmane; Benammar, N. E.; Aglieri, V.; Mosca, M.; Macaluso, R.; Khirouni, K.; Ezzaouia, H.

    2017-01-01

    In this work, we report on a new, efficient and low cost process of silicon carbide (SiC) powder purification intended to be used in photovoltaic applications. This process consists on the preparation of porous silicon carbide layers followed by a photo-thermal annealing under oxygen atmosphere and chemical treatment. The effect of etching time on impurities removal efficiency was studied. Inductively coupled plasma atomic emission spectrometry (ICP-AES) results showed that the best result was achieved for an etching time of 10 min followed by gettering at 900 °C during 1 h. SiC purity is improved from 3N (99.9771%) to 4N (99.9946%). Silicon carbide thin films were deposited onto silicon substrates by pulsed laser deposition technique (PLD) using purified SiC powder as target. Significant improvement of the minority carrier lifetime was obtained encouraging the use of SiC as a passivation layer for silicon.

  16. Highly transparent front electrodes with metal fingers for p-i-n thin-film silicon solar cells

    Directory of Open Access Journals (Sweden)

    Moulin Etienne

    2015-01-01

    Full Text Available The optical and electrical properties of transparent conductive oxides (TCOs, traditionally used in thin-film silicon (TF-Si solar cells as front-electrode materials, are interlinked, such that an increase in TCO transparency is generally achieved at the cost of reduced lateral conductance. Combining a highly transparent TCO front electrode of moderate conductance with metal fingers to support charge collection is a well-established technique in wafer-based technologies or for TF-Si solar cells in the substrate (n-i-p configuration. Here, we extend this concept to TF-Si solar cells in the superstrate (p-i-n configuration. The metal fingers are used in conjunction with a millimeter-scale textured foil, attached to the glass superstrate, which provides an antireflective and retroreflective effect; the latter effect mitigates the shadowing losses induced by the metal fingers. As a result, a substantial increase in power conversion efficiency, from 8.7% to 9.1%, is achieved for 1-μm-thick microcrystalline silicon solar cells deposited on a highly transparent thermally treated aluminum-doped zinc oxide layer combined with silver fingers, compared to cells deposited on a state-of-the-art zinc oxide layer.

  17. Improvement of the Crystallinity of Silicon Films Deposited by Hot-Wire Chemical Vapor Deposition with Negative Substrate Bias

    Science.gov (United States)

    Zhang, Lei; Shen, Honglie; You, Jiayi

    2013-08-01

    We have investigated the effect of negative substrate bias on microcrystalline silicon films deposited on glass and stainless steel by hot-wire chemical vapor deposition (HWCVD) to gain insight into the effect of negative substrate bias on crystallization. Structural characterization of the silicon films was performed by Raman spectroscopy, x-ray diffraction, and scanning electron microscopy. It was found that the crystallinity of the films is obviously improved by applying the substrate bias, especially for films on stainless steel. At hot-wire temperature of 1800°C and negative substrate bias of -800 V, grain size as large as 200 nm was obtained on stainless-steel substrate with crystalline fraction 9% higher than that of films deposited on glass and 15% higher than that of films deposited without substrate bias. It is deduced that the improvement of the crystallinity is mainly related to the accelerated electrons emitted from the hot wires. The differences in this improvement between different substrates are caused by the different electrical potential of the substrates. A solar cell fabricated by HWCVD with -800 V substrate bias is demonstrated, showing an obviously higher conversion efficiency than that without substrate bias.

  18. Vinyl ether silicones

    Energy Technology Data Exchange (ETDEWEB)

    Herzig, C.; Dauth, J.; Deubzer, B.; Weis, J. [Wacker-Chemie GmbH, Burghausen (Germany)

    1995-12-01

    Siloxanes with vinyl ether groups are prepared by hydrosilylation reaction of dihydrosiloxanes with divinyl ethers in excess. Different stoichiometry, produces linear copolymers of different viscosities and double bond concentrations always with an active vinyl ether group at each chain end. Polymerisations triggered by UV light were done with mixtures of these compounds and a series of onium salts. Very fast cure is observed even with low doses at 290 nm. V.E. silicones are found to cure essentially quantitative. The comparison with other highly reactive cationic monomers revealed that compounds are among the fastest curing prepolymers in cationic chemistry.

  19. Silicon production process evaluations

    Science.gov (United States)

    1982-01-01

    Chemical engineering analyses involving the preliminary process design of a plant (1,000 metric tons/year capacity) to produce silicon via the technology under consideration were accomplished. Major activities in the chemical engineering analyses included base case conditions, reaction chemistry, process flowsheet, material balance, energy balance, property data, equipment design, major equipment list, production labor and forward for economic analysis. The process design package provided detailed data for raw materials, utilities, major process equipment and production labor requirements necessary for polysilicon production in each process.

  20. Edgeless silicon pad detectors

    Science.gov (United States)

    Perea Solano, B.; Abreu, M. C.; Avati, V.; Boccali, T.; Boccone, V.; Bozzo, M.; Capra, R.; Casagrande, L.; Chen, W.; Eggert, K.; Heijne, E.; Klauke, S.; Li, Z.; Mäki, T.; Mirabito, L.; Morelli, A.; Niinikoski, T. O.; Oljemark, F.; Palmieri, V. G.; Rato Mendes, P.; Rodrigues, S.; Siegrist, P.; Silvestris, L.; Sousa, P.; Tapprogge, S.; Trocmé, B.

    2006-05-01

    We report measurements in a high-energy pion beam of the sensitivity of the edge region in "edgeless" planar silicon pad diode detectors diced through their contact implants. A large surface current on such an edge prevents the normal reverse biasing of the device, but the current can be sufficiently reduced by the use of a suitable cutting method, followed by edge treatment, and by operating the detector at low temperature. The depth of the dead layer at the diced edge is measured to be (12.5±8 stat..±6 syst.) μm.

  1. Edgeless silicon pad detectors

    Energy Technology Data Exchange (ETDEWEB)

    Perea Solano, B. [CERN, CH-1211 Geneva 23 (Switzerland)]. E-mail: blanca.perea.solano@cern.ch; Abreu, M.C. [LIP and University of Algarve, 8000 Faro (Portugal); Avati, V. [CERN, CH-1211 Geneva 23 (Switzerland); Boccali, T. [INFN Sez. di Pisa and Scuola Normale Superiore, Pisa (Italy); Boccone, V. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Bozzo, M. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Capra, R. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Casagrande, L. [INFN Sez. di Roma 2 and Universita di Roma 2, Rome (Italy); Chen, W. [Brookhaven National Laboratory, Upton, NY 11973-5000 (United States); Eggert, K. [CERN, CH-1211 Geneva 23 (Switzerland); Heijne, E. [CERN, CH-1211 Geneva 23 (Switzerland); Klauke, S. [CERN, CH-1211 Geneva 23 (Switzerland); Li, Z. [Brookhaven National Laboratory, Upton, NY 11973-5000 (United States); Maeki, T. [Helsinki Institute of Physics, Helsinki (Finland); Mirabito, L. [CERN, CH-1211 Geneva 23 (Switzerland); Morelli, A. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Niinikoski, T.O. [CERN, CH-1211 Geneva 23 (Switzerland); Oljemark, F. [Helsinki Institute of Physics, Helsinki (Finland); Palmieri, V.G. [Helsinki Institute of Physics, Helsinki (Finland); Rato Mendes, P. [LIP and University of Algarve, 8000 Faro (Portugal); Rodrigues, S. [LIP and University of Algarve, 8000 Faro (Portugal); Siegrist, P. [CERN, CH-1211 Geneva 23 (Switzerland); Silvestris, L. [INFN Sez. Di Bari, Bari (Italy); Sousa, P. [LIP and University of Algarve, 8000 Faro (Portugal); Tapprogge, S. [Helsinki Institute of Physics, Helsinki (Finland); Trocme, B. [Institut de Physique Nucleaire, Villeurbanne (France)

    2006-05-01

    We report measurements in a high-energy pion beam of the sensitivity of the edge region in 'edgeless' planar silicon pad diode detectors diced through their contact implants. A large surface current on such an edge prevents the normal reverse biasing of the device, but the current can be sufficiently reduced by the use of a suitable cutting method, followed by edge treatment, and by operating the detector at low temperature. The depth of the dead layer at the diced edge is measured to be (12.5{+-}8{sub stat.}.{+-}6{sub syst.}) {mu}m.

  2. The LHCb Silicon Tracker

    CERN Document Server

    Elsasser, Ch; Gallas Torreira, A; Pérez Trigo, A; Rodríguez Pérez, P; Bay, A; Blanc, F; Dupertuis, F; Haefeli, G; Komarov, I; Märki, R; Muster, B; Nakada, T; Schneider, O; Tobin, M; Tran, M T; Anderson, J; Bursche, A; Chiapolini, N; Saornil, S; Steiner, S; Steinkamp, O; Straumann, U; Vollhardt, A; Britsch, M; Schmelling, M; Voss, H; Okhrimenko, O; Pugatch, V

    2013-01-01

    The aim of the LHCb experiment is to study rare heavy quark decays and CP vio- lation with the high rate of beauty and charmed hadrons produced in $pp$ collisions at the LHC. The detector is designed as a single-arm forward spectrometer with excellent tracking and particle identification performance. The Silicon Tracker is a key part of the tracking system to measure the particle trajectories to high precision. This paper reports the performance as well as the results of the radiation damage monitoring based on leakage currents and on charge collection efficiency scans during the data taking in the LHC Run I.

  3. Light Emitting Porous Silicon

    Science.gov (United States)

    1993-05-01

    ml - mm m lm m ~ m m ThO report Page 14 preparation method which has been originally described by Wohler [23] leads to a bright yellow substance with...Solid State Commun. 81, 307 (1992). [221 H. Kautsky, and H. Zocher, Z. Phys. 9,267 (1992). L TNO report Page 28 [231 F. Wohler , Lieb. Ann. 127, 275 (1863...Netherlands Fax + 31 70 328 09 61 Phone + 31 70 326 42 21 TNO- report copy no. e FEL-93eo047r Lh Emitting Porous Silicon sitho(s): DTICHMi.P.Th

  4. Silicon carbide sewing thread

    Science.gov (United States)

    Sawko, Paul M. (Inventor)

    1995-01-01

    Composite flexible multilayer insulation systems (MLI) were evaluated for thermal performance and compared with currently used fibrous silica (baseline) insulation system. The systems described are multilayer insulations consisting of alternating layers of metal foil and scrim ceramic cloth or vacuum metallized polymeric films quilted together using ceramic thread. A silicon carbide thread for use in the quilting and the method of making it are also described. These systems provide lightweight thermal insulation for a variety of uses, particularly on the surface of aerospace vehicles subject to very high temperatures during flight.

  5. Silicon Valley Lifestyle

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2005-01-01

    @@ As we embrace the rapid developments of the new media age,competitiveness in the field of internet and computer technology is an increasingly crucial factor in stimulating new business,jobs and new industry in the region.Accelerating advancements in new media,internet,software and computer technologies offer new commercial opportunities and sources of economic revenue. Silicon Valley has been a model of the new age since its existence.While the dream place not only has a unique business model,but also has a very special lifestyle.

  6. Impurity doping processes in silicon

    CERN Document Server

    Wang, FFY

    1981-01-01

    This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

  7. Hydrodynamic slip in silicon nanochannels

    Science.gov (United States)

    Ramos-Alvarado, Bladimir; Kumar, Satish; Peterson, G. P.

    2016-03-01

    Equilibrium and nonequilibrium molecular dynamics simulations were performed to better understand the hydrodynamic behavior of water flowing through silicon nanochannels. The water-silicon interaction potential was calibrated by means of size-independent molecular dynamics simulations of silicon wettability. The wettability of silicon was found to be dependent on the strength of the water-silicon interaction and the structure of the underlying surface. As a result, the anisotropy was found to be an important factor in the wettability of these types of crystalline solids. Using this premise as a fundamental starting point, the hydrodynamic slip in nanoconfined water was characterized using both equilibrium and nonequilibrium calculations of the slip length under low shear rate operating conditions. As was the case for the wettability analysis, the hydrodynamic slip was found to be dependent on the wetted solid surface atomic structure. Additionally, the interfacial water liquid structure was the most significant parameter to describe the hydrodynamic boundary condition. The calibration of the water-silicon interaction potential performed by matching the experimental contact angle of silicon led to the verification of the no-slip condition, experimentally reported for silicon nanochannels at low shear rates.

  8. Investigation of isochronal annealing on the optical properties of HWCVD amorphous silicon nitride deposited at low temperatures and low gas flow rates

    Science.gov (United States)

    Muller, T. F. G.; Jacobs, S.; Cummings, F. R.; Oliphant, C. J.; Malgas, G. F.; Arendse, C. J.

    2015-06-01

    Hydrogenated amorphous silicon nitride (a-SiNx:H) is used as anti-reflection coatings in commercial solar cells. A final firing step in the production of micro-crystalline silicon solar cells allows hydrogen effusion from the a-SiNx:H into the solar cell, and contributes to bulk passivation of the grain boundaries. In this study a-SiNx:H deposited in a hot-wire chemical vapour deposition (HWCVD) chamber with reduced gas flow rates and filament temperature compared to traditional deposition regimes, were annealed isochronally. The UV-visible reflection spectra of the annealed material were subjected to the Bruggeman Effective Medium Approximation (BEMA) treatment, in which a theoretical amorphous semiconductor was combined with particle inclusions due to the structural complexities of the material. The extraction of the optical functions and ensuing Wemple-DeDomenici analysis of the wavelength-dependent refractive index allowed for the correlation of the macroscopic optical properties with the changes in the local atomic bonding configuration, involving silicon, nitrogen and hydrogen.

  9. Silicon-micromachined microchannel plates

    CERN Document Server

    Beetz, C P; Steinbeck, J; Lemieux, B; Winn, D R

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of approx 0.5 to approx 25 mu m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposite...

  10. Technology Study on Producing High Melting Point Microcrystalline Wax From Shenbei/Daqing Vacuum Residue Oil%沈北/大庆减压渣油生产高熔点微晶蜡工艺研究

    Institute of Scientific and Technical Information of China (English)

    金秀英; 陈白莉; 杜晓敏; 王玉玲; 范燕

    2013-01-01

      沈北/大庆减压渣油中含有丰富的微晶蜡。将渣油亚临界丙烷脱沥青得到轻脱油,再经酮苯脱油-白土精制生产高熔点微晶蜡。说明大庆、沈北混合原油减压渣油经脱沥青等系列工艺处理生产光亮油和微晶蜡的技术可行性,提出了大庆、沈北混合原油减压渣油综合利用的途径。%There is abundant microcrystalline wax in Shenbei/Taqing vacuum residue oil. Light deasphalting oil is often obtained from vacuum residue oil by subcritical propane deasphalting process, then microcrystalline wax with high melting point can be produced by butanone-toluene solvent deoiling and clay-treated refining. In this paper,the technical and economic feasibility of producing bright stock and microcrystalline wax from the vacuum residue of Daqing and Shenbei mixed crude by deasphalting etc.processes was discussed according to the pilot plant test results .Utilization ways of vacuum residue of Daqing and Shenbei mixed crude were put forward.

  11. Growth of silicon sheets from metallurgical-grade silicon

    Science.gov (United States)

    Ciszek, T.; Schietzelt, M.; Kazmerski, L. L.; Hurd, J. L.; Fernelius, B.

    1981-05-01

    Impure silicon is difficult to solidify in sheet form because of morphological proturberances which may result from constitutional supercooling. Sheet growth methods which require a specific crystallographic orientation or which are characterized by a narrow melt meniscus are most affected by this problem. The edge-supported pulling technique was applied to sheet growth of metallurgical grade silicon and DAR (Direct Arc Reactor) silicon. The 7 mm meniscus height associated with this technique allowed the growth of 5 cm wide sheets from both materials. In each case, the sheets were p-type.

  12. Matching of Silicon Thin-Film Tandem Solar Cells for Maximum Power Output

    Directory of Open Access Journals (Sweden)

    C. Ulbrich

    2013-01-01

    Full Text Available We present a meaningful characterization method for tandem solar cells. The experimental method allows for optimizing the output power instead of the current. Furthermore, it enables the extraction of the approximate AM1.5g efficiency when working with noncalibrated spectra. Current matching of tandem solar cells under short-circuit condition maximizes the output current but is disadvantageous for the overall fill factor and as a consequence does not imply an optimization of the output power of the device. We apply the matching condition to the maximum power output; that is, a stack of solar cells is power matched if the power output of each subcell is maximal at equal subcell currents. The new measurement procedure uses additional light-emitting diodes as bias light in the JV characterization of tandem solar cells. Using a characterized reference tandem solar cell, such as a hydrogenated amorphous/microcrystalline silicon tandem, it is possible to extract the AM1.5g efficiency from tandems of the same technology also under noncalibrated spectra.

  13. Numerical 3D-simulation of micromorph silicon thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Geissendoerfer, Stefan; Lacombe, Juergen; Maydell, Karsten von; Agert, Carsten [EWE-Forschungszentrum fuer Energietechnologie e.V. NEXT ENERGY, Carl-von-Ossietzky-Str. 15, 26129 Oldenburg (Germany)

    2011-07-01

    In this contribution 3-dimensional simulations of micromorph silicon thin film solar cells, which have a tandem structure consisting of amorphous and microcrystalline subcells, are presented. The variety of different active layers leads to a very complex structure. Additionally, randomly textured surfaces and interfaces have to be taken into account. Our goal is to create physical models to describe the coupled optical and electrical behaviour of the whole structure in three dimensions to determine the theoretical limits and dominant material parameters. To simulate solar cells with rough interfaces, the surfaces topography was measured via atomic force microscopy (AFM) and transferred to the commercial software Sentaurus TCAD from the company Synopsys. The virtual structure includes layer thicknesses and optoelectronic parameters. Results of the space resolved optical generation rates by using the optical solver ''Raytracer'' are presented. The space resolved optical generation rate inside the semiconductor layers depends on the structure of the TCO interface. Therefore, regions with higher charge carrier densities can be observed which has an influence on the current transport through the stack. These investigations and the influence to the IV characteristic are presented.

  14. Lipid membranes on nanostructured silicon.

    Energy Technology Data Exchange (ETDEWEB)

    Slade, Andrea Lynn; Lopez, Gabriel P. (University of New Mexico, Albuquerque, NM); Ista, Linnea K. (University of New Mexico, Albuquerque, NM); O' Brien, Michael J. (University of New Mexico, Albuquerque, NM); Sasaki, Darryl Yoshio; Bisong, Paul (University of New Mexico, Albuquerque, NM); Zeineldin, Reema R. (University of New Mexico, Albuquerque, NM); Last, Julie A.; Brueck, Stephen R. J. (University of New Mexico, Albuquerque, NM)

    2004-12-01

    A unique composite nanoscale architecture that combines the self-organization and molecular dynamics of lipid membranes with a corrugated nanotextured silicon wafer was prepared and characterized with fluorescence microscopy and scanning probe microscopy. The goal of this project was to understand how such structures can be assembled for supported membrane research and how the interfacial interactions between the solid substrate and the soft, self-assembled material create unique physical and mechanical behavior through the confinement of phases in the membrane. The nanometer scale structure of the silicon wafer was produced through interference lithography followed by anisotropic wet etching. For the present study, a line pattern with 100 nm line widths, 200 nm depth and a pitch of 360 nm pitch was fabricated. Lipid membranes were successfully adsorbed on the structured silicon surface via membrane fusion techniques. The surface topology of the bilayer-Si structure was imaged using in situ tapping mode atomic force microscopy (AFM). The membrane was observed to drape over the silicon structure producing an undulated topology with amplitude of 40 nm that matched the 360 nm pitch of the silicon structure. Fluorescence recovery after photobleaching (FRAP) experiments found that on the microscale those same structures exhibit anisotropic lipid mobility that was coincident with the silicon substructure. The results showed that while the lipid membrane maintains much of its self-assembled structure in the composite architecture, the silicon substructure indeed influences the dynamics of the molecular motion within the membrane.

  15. The effect of microcrystalline cellulose crystallinity on the hydrophilic property of tablets and the hydrolysis of acetylsalicylic acid as active pharmaceutical ingredient inside tablets.

    Science.gov (United States)

    Awa, Kimie; Shinzawa, Hideyuki; Ozaki, Yukihiro

    2015-08-01

    The crystal structures of active pharmaceutical ingredients and excipients should be strictly controlled because they influence pharmaceutical properties of products which cause the change in the quality or the bioavailability of the products. In this study, we investigated the effects of microcrystalline cellulose (MCC) crystallinity on the hydrophilic properties of tablets and the hydrolysis of active pharmaceutical ingredient, acetylsalicylic acid (ASA), inside tablets by using tablets containing 20% MCC as an excipient. Different levels of grinding were applied to MCC prior to tablet formulation, to intentionally cause structural variation in the MCC. The water penetration and moisture absorbability of the tablets increased with decreasing the crystallinity of MCC through higher level of grinding. More importantly, the hydrolysis of ASA inside tablets was also accelerated. These results indicate that the crystallinity of MCC has crucial effects on the pharmaceutical properties of tablets even when the tablets contain a relatively small amount of MCC. Therefore, controlling the crystal structure of excipients is important for controlling product qualities.

  16. Fine granules showing sustained drug release prepared by high-shear melt granulation using triglycerin full behenate and milled microcrystalline cellulose.

    Science.gov (United States)

    Aoki, Hajime; Iwao, Yasunori; Uchimoto, Takeaki; Noguchi, Shuji; Kajihara, Ryusuke; Takahashi, Kana; Ishida, Masayuki; Terada, Yasuko; Suzuki, Yoshio; Itai, Shigeru

    2015-01-30

    This study aimed to prepare fine granules with a diameter less than 200μm and sustained drug release properties by melt granulation. Triglycerin full behenate (TR-FB) was examined as a new meltable binder (MB) by comparison of its properties with those of glycerin monostearate (GM), widely used as MB. The effect of milling microcrystalline cellulose (MCC), an excipient for melt granulation, on the granule properties was also investigated. TR-FB was more stable during heating and storage than GM, and produced smaller granules with narrower particle size distribution, larger yield in the 106-200μm range, uniform roundness and better sustained drug release profile than those prepared with GM. Granules prepared with milled MCC had almost the same physicochemical properties as those produced with intact MCC. However, milled MCC produced granules with a more rigid structure and smaller void space than intact MCC. Consequently, the granules produced with milled MCC showed better sustained drug release behavior than those prepared with intact MCC. We successfully prepared fine granules with sustained drug release properties and diameter of less than 200μm using TR-FB and milled MCC. Copyright © 2014 Elsevier B.V. All rights reserved.

  17. To prepare and characterize microcrystalline cellulose granules using water and isopropyl alcohol as granulating agents and determine its end-point by thermal and rheological tools.

    Science.gov (United States)

    Chaudhari, Smruti P; Dave, Rutesh H

    2015-05-01

    Microcrystalline cellulose (MCC-102) is one of the most commonly used excipient in the pharmaceutical industry. For this research purpose, authors have developed a different technique to determine the end point for MCC-102 using water and isopropyl alcohol 70% (IPA) as granulating agent. Wet and dry granules obtained were characterized for their flow properties using the powder rheometer and thermal analysis. Powder rheometer was used to measure basic flowability energy (BFE), specific energy (SE), percentage compressibility, permeability and aeration. Thermal analysis includes effusivity and differential scanning calorimetry (DSC) measurements. BFE and SE results showed water granules requires high energy as compared to IPA granules. Permeability and compressibility results suggest IPA forms more porous granules and have better compressibility as compared to water granules. Hardness data reveals interesting phenomena in which as the amount of water increases, hardness decreases and vice-versa for IPA. Optimal granules were obtained in the range of 45-55% w/w. DSC data supported the formation of optimal granules. Empirical measurements like angle of repose did not reveal any significant differences between powder flow among various granules. In this paper, with the help of thermal effusivity and powder rheology we were able to differentiate between various powder flows and determine the optimal range for granule formation.

  18. Effect on Dissolvability of Microcrystalline Cellulose through Activation%微晶纤维素的活化对其溶解性能的影响

    Institute of Scientific and Technical Information of China (English)

    任丹; 李丹; 刘萍; 孙晓; 张瑞涵; 方健

    2012-01-01

    Microcrystalline cellulose(MCC) was activation treated by amine,water and ultrasonic respectively.The dissolve time in NaOH-Urea-Thiourea solution,degree of polymerization(DP),solubility,the surface of fiber,crystallinity and effect on molecule hydrogen bonding of MCC before and after activation were studied.The result showed that ultrasonic activation is better than the other two activation methods,which is more convenient to improve the dissolvability of MCC with treating power from 60 to 99 percent and treating time from 60 to 120 minutes.%用胺活化、水活化与超声波活化分别处理了微晶纤维素(MCC)。研究了活化前后微晶纤维素在氢氧化钠-尿素-硫脲中的溶解时间、聚合度、溶解度、纤维表面形态、结晶度以及对分子氢键的影响。结果表明,超声波活化较其他2种活化方法效果更好,且处理功率为60%~99%、处理时间在60~120min内更有利于改善微晶纤维素的溶解性能。

  19. Dy(3)(+) -, Sm(3)(+) -, Ce(3)(+) - and Tb(3)(+) -activated optical properties of microcrystalline BaMgP2 O7 phosphors.

    Science.gov (United States)

    Wani, J A; Dhoble, N S; Kokode, N S; Singh, Vijay; Dhoble, S J

    2017-03-01

    Photoluminescence (PL) and thermoluminescence (TL) properties of rare earth (RE) ion (RE = Dy(3)(+) , Sm(3)(+) , Ce(3)(+) , Tb(3)(+) ) activated microcrystalline BaMgP2 O7 phosphors are presented in this work. Non-doped and doped samples of BaMgP2 O7 were prepared using a solid state diffusion method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), PL and TL. The XRD measurement confirmed the phase purity of the BaMgP2 O7 host matrix. The average particle size was found through SEM measurement to be around 2 μm. All activators using the PL technique displayed characteristic excitation and emission spectra that corresponded to their typical f → f and f → d transitions respectively. Thermoluminescence measurements showed that BaMgP2 O7 :RE (RE = Dy(3)(+) , Sm(3)(+) , Tb(3)(+) , Ce(3)(+) ) and co-doped BaMgP2 O7 :Ce(3)(+) ,Tb(3)(+) phosphors have also TL behaviour.

  20. Ultrasound-assisted ionic liquid-based micellar extraction combined with microcrystalline cellulose as sorbent in dispersive microextraction for the determination of phenolic compounds in propolis.

    Science.gov (United States)

    Cao, Jun; Peng, Li-Qing; Du, Li-Jing; Zhang, Qi-Dong; Xu, Jing-Jing

    2017-04-22

    An ionic liquid-(IL) based micellar extraction combined with microcrystalline cellulose- (MCC) assisted dispersive micro solid-phase extraction method was developed to extract phenolic compounds from propolis. A total of 20 target compounds were identified by ultra-high- performance liquid chromatography coupled with quadrupole time-of-flight tandem mass spectrometry. The main extraction parameters were optimized and included the ultrasonic power, ultrasonic time, sample pH, type of IL, the concentration of [C12mim]Br, extraction time, concentration of MCC, type of sorbent and type of elution solvents. Under the optimum conditions, the proposed method exhibited good linearities (r(2) ≥ 0.999) for all plant phenolic compounds with the lower limits of detection in the range of 0.21-0.41 ng/mL. The recoveries ranged from 82.74% to 97.88% for pinocembrin, chrysin and galangin. Compared with conventional solvent extraction, the present method was simpler and more efficient and required less organic solvent and a shorter extraction time. Finally, the methodology was successfully used for the extraction and enrichment of phenolic compounds in propolis. Copyright © 2017 Elsevier B.V. All rights reserved.

  1. Microcrystalline cellulose, a useful alternative for sucrose as a matrix former during freeze-drying of drug nanosuspensions - a case study with itraconazole.

    Science.gov (United States)

    Van Eerdenbrugh, Bernard; Vercruysse, Sofie; Martens, Johan A; Vermant, Jan; Froyen, Ludo; Van Humbeeck, Jan; Van den Mooter, Guy; Augustijns, Patrick

    2008-10-01

    Itraconazole nanosuspensions, stabilized with 10% TPGS (relative to the weight of itraconazole), were transformed into nanoparticulate powders by freeze-drying. The crystalline itraconazole nanoparticles showed peak broadening in the X-ray powder diffraction spectra and a lower melting point as inferred from differential scanning calorimetry. As it was found that freeze-drying compromised dissolution behavior, sucrose was added as a matrix, former (50,100 and 200%, relative to the weight of itraconazole). Higher amounts of sucrose unexpectedly resulted in a decrease in the dissolution rate. After thorough evaluation of the powders, it was found that whereas higher sucrose content showed a cryoprotective effect, agglomeration during the final phase of the subsequent drying step tended to increase with higher amounts of sucrose. Therefore, microcrystalline cellulose (MCC) was evaluated as an alternative matrix former. The inclusion of MCC resulted in fast dissolution that increased with increasing amounts of MCC [for powders containing 50%,100% and 200% MCC, (relative to the weight of itraconazole), the times required for 63.2% release were 10.5+/-0.7, 6.4+/-1.2 and 3.1+/-0.5min, respectively]. The dissolution profiles showed an initial phase of burst dissolution, followed by a phase of slower release. As the fraction showing burst dissolution increased with higher MCC content, the system holds promise to maintain the dissolution enhancing properties of nanoparticles in the dry form.

  2. Single crystalline mesoporous silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Hochbaum, A.I.; Gargas, Daniel; Jeong Hwang, Yun; Yang, Peidong

    2009-08-04

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. These porous nanowires also retain the crystallographic orientation of the wafer from which they are etched. Electron microscopy and diffraction confirm their single-crystallinity and reveal the silicon surrounding the pores is as thin as several nanometers. Confocal fluorescence microscopy showed that the photoluminescence (PL) of these arrays emanate from the nanowires themselves, and their PL spectrum suggests that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices.

  3. Ideal anodization of silicon

    Energy Technology Data Exchange (ETDEWEB)

    Yamani, Z.; Thompson, W.H.; AbuHassan, L.; Nayfeh, M.H. [Department of Physics, University of Illinois at Urbana-Champaign, 1110 W. Green Street, Urbana, Illinois 61801 (United States)

    1997-06-01

    Silicon has been anodized such that the porous layer is passivated with a homogeneous stretching phase by incorporating H{sub 2}O{sub 2} in the anodization mixture. Fourier transform infrared spectroscopy measurements show that the Si{endash}H stretching mode oriented perpendicular to the surface at {approximately}2100cm{sup {minus}1} dominates the spectrum with negligible contribution from the bending modes in the 600{endash}900cm{sup {minus}1} region. Material analysis using Auger electron spectroscopy shows that the samples have very little impurities, and that the luminescent layer is very thin (5{endash}10 nm). Scanning electron microscopy shows that the surface is smoother with features smaller than those of conventional samples. {copyright} {ital 1997 American Institute of Physics.}

  4. Silicon force sensor

    Science.gov (United States)

    Galambos, Paul C.; Crenshaw, Thomas B.; Nishida, Erik E.; Burnett, Damon J.; Lantz, Jeffrey W.

    2016-07-05

    The various technologies presented herein relate to a sensor for measurement of high forces and/or high load shock rate(s), whereby the sensor utilizes silicon as the sensing element. A plate of Si can have a thinned region formed therein on which can be formed a number of traces operating as a Wheatstone bridge. The brittle Si can be incorporated into a layered structure comprising ductile and/or compliant materials. The sensor can have a washer-like configuration which can be incorporated into a nut and bolt configuration, whereby tightening of the nut and bolt can facilitate application of a compressive preload upon the sensor. Upon application of an impact load on the bolt, the compressive load on the sensor can be reduced (e.g., moves towards zero-load), however the magnitude of the preload can be such that the load on the sensor does not translate to tensile stress being applied to the sensor.

  5. Monolithic silicon bolometers

    Science.gov (United States)

    Downey, P. M.; Jeffries, A. D.; Meyer, S. S.; Weiss, R.; Bachner, F. J.; Donnelly, J. P.; Lindley, W. T.; Mountain, R. W.; Silversmith, D. J.

    1984-01-01

    A new type of bolometer detector for the millimeter and submillimeter spectral range is described. The bolometer is constructed of silicon using integrated circuit fabrication techniques. Ion implantation is used to give controlled resistance vs temperature properties as well as extremely low 1/f noise contacts. The devices have been tested between 4.2 and 0.3 K. The best electrical NEP measured is 4 x 10 to the -16th W/Hz to the 1/2 at 0.35 K between 1- and 10-Hz modulation frequency. This device had a detecting area of 0.25 sq cm and a time constant of 20 msec at a bath temperature of 0.35 K.

  6. Automated silicon module assembly for the CMS silicon tracker

    CERN Document Server

    Surrow, B

    2001-01-01

    The CMS silicon tracker requires the assembly of about 20000 individual silicon detector modules. To ensure the assembly of such an amount with high, reproducible quality, an automated procedure has been developed for module assembly based on a high-precision robotic positioning machine. This procedure allows a much higher throughput and will result in much reduced manpower requirements than for traditional manual techniques. (1 refs).

  7. Integrated silicon and silicon nitride photonic circuits on flexible substrates.

    Science.gov (United States)

    Chen, Yu; Li, Mo

    2014-06-15

    Flexible integrated photonic devices based on crystalline materials on plastic substrates have a promising potential in many unconventional applications. In this Letter, we demonstrate a fully integrated photonic system including ring resonators and grating couplers, based on both crystalline silicon and silicon nitride, on flexible plastic substrate by using the stamping-transfer method. A high yield has been achieved by a simple, yet reliable transfer method without significant performance degradation.

  8. Acute pneumonitis secondary to subcutaneous silicone injection

    Directory of Open Access Journals (Sweden)

    Gopie P

    2011-06-01

    Full Text Available Priya Gopie, Sateesh Sakhamuri, Anu Sharma, Sanjeev Solomon, Surujpal TeelucksinghClinical Medical Sciences, University of the West Indies, St Augustine, TrinidadAbstract: Following silicone injection, end organ toxicity can occur. To our knowledge this report documents the first case of silicone embolization in the Caribbean and serves to highlight an emergent danger associated with its illicit use for cosmetic purposes in this region.Keywords: silicone, silicone embolism, silicone pneumonitis, alveolar hemorrhage, pneumonitis

  9. Silicon Holder For Molecular-Beam Epitaxy

    Science.gov (United States)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.

    1993-01-01

    Simple assembly of silicon wafers holds silicon-based charge-coupled device (CCD) during postprocessing in which silicon deposited by molecular-beam epitaxy. Attains temperatures similar to CCD, so hotspots suppressed. Coefficients of thermal expansion of holder and CCD equal, so thermal stresses caused by differential thermal expansion and contraction do not develop. Holder readily fabricated, by standard silicon processing techniques, to accommodate various CCD geometries. Silicon does not contaminate CCD or molecular-beam-epitaxy vacuum chamber.

  10. Studies of silicon carbide and silicon carbide nitride thin films

    Science.gov (United States)

    Alizadeh, Zhila

    Silicon carbide semiconductor technology is continuing to advance rapidly. The excellent physical and electronic properties of silicon carbide recently take itself to be the main focused power device material for high temperature, high power, and high frequency electronic devices because of its large band gap, high thermal conductivity, and high electron saturation drift velocity. SiC is more stable than Si because of its high melting point and mechanical strength. Also the understanding of the structure and properties of semiconducting thin film alloys is one of the fundamental steps toward their successful application in technologies requiring materials with tunable energy gaps, such as solar cells, flat panel displays, optical memories and anti-reflecting coatings. Silicon carbide and silicon nitrides are promising materials for novel semiconductor applications because of their band gaps. In addition, they are "hard" materials in the sense of having high elastic constants and large cohesive energies and are generally resistant to harsh environment, including radiation. In this research, thin films of silicon carbide and silicon carbide nitride were deposited in a r.f magnetron sputtering system using a SiC target. A detailed analysis of the surface chemistry of the deposited films was performed using x-ray photoelectron spectroscopy (XPS), Fourier Transform Infrared Spectroscopy (FTIR) and Raman spectroscopy whereas structure and morphology was studied atomic force microscopy (AFM), and nonoindentation.

  11. Characterization of silicon-silicon carbide ceramic derived from carbon-carbon silicon carbide composites

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Vijay K. [Indian Institute of Technology, Varanasi (India). Dept. of Mechanical Engineering; Krenkel, Walter [Univ. of Bayreuth (Germany). Dept. of Ceramic Materials Engineering

    2013-04-15

    The main objective of the present work is to process porous silicon - silicon carbide (Si - SiC) ceramic by the oxidation of carboncarbon silicon carbide (C/C - SiC) composites. Phase studies are performed on the oxidized porous composite to examine the changes due to the high temperature oxidation. Further, various characterization techniques are performed on Si- SiC ceramics in order to study the material's microstructure. The effects of various parameters such as fiber alignment (twill weave and short/chopped fiber) and phenolic resin type (resol and novolak) are characterized.

  12. Imprinted silicon-based nanophotonics

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Olsen, Brian Bilenberg; Frandsen, Lars Hagedorn

    2007-01-01

    We demonstrate and optically characterize silicon-on-insulator based nanophotonic devices fabricated by nanoimprint lithography. In our demonstration, we have realized ordinary and topology-optimized photonic crystal waveguide structures. The topology-optimized structures require lateral pattern ...

  13. Scattering characteristics from porous silicon

    Directory of Open Access Journals (Sweden)

    R. Sabet-Dariani

    2000-12-01

    Full Text Available   Porous silicon (PS layers come into existance as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet.   In this article, first, the optical properties of silicon and porous silicon are described. Then, previous research and the proposed models about reflection from PS and the origin of its photoluminescence are reveiwed. The reflecting and scattering, absorption and transmission of light from this material, are then investigated. These experiments include,different methods of PS sample preparation their photoluminescence, reflecting and scattering of light determining different characteristics with respect to Si bulk.

  14. The History of Silicon Valley

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2005-01-01

    @@ Just as Manchester was once the center for indus trial progress, the microelectronics industry also has a heartland. Silicon Valley is located in a thirty by ten miles strip between San Francisco and San Jose,California.

  15. Optical information capacity of silicon

    CERN Document Server

    Dimitropoulos, Dimitris

    2014-01-01

    Modern computing and data storage systems increasingly rely on parallel architectures where processing and storage load is distributed within a cluster of nodes. The necessity for high-bandwidth data links has made optical communication a critical constituent of modern information systems and silicon the leading platform for creating the necessary optical components. While silicon is arguably the most extensively studied material in history, one of its most important attributes, an analysis of its capacity to carry optical information, has not been reported. The calculation of the information capacity of silicon is complicated by nonlinear losses, phenomena that emerge in optical nanowires as a result of the concentration of optical power in a small geometry. Nonlinear losses are absent in silica glass optical fiber and other common communication channels. While nonlinear loss in silicon is well known, noise and fluctuations that arise from it have never been considered. Here we report sources of fluctuations...

  16. Ultra-fast silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sadrozinski, H. F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Petersen, B.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N.; Marchetto, F. [INFN Torino, Torino (Italy); Bruzzi, M.; Mori, R.; Scaringella, M.; Vinattieri, A. [University of Florence, Department of Physics and Astronomy, Sesto Fiorentino, Firenze (Italy)

    2013-12-01

    We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R and D topics are discussed. -- Highlights: •We are proposing thin pixel silicon sensors with 10's of picoseconds time resolution. •Fast charge collection is coupled with internal charge multiplication. •The truly 4-D sensors will revolutionize imaging and particle counting in many applications.

  17. Silicon Drift Detectors for ALICE

    CERN Document Server

    Navach, F; CERN. Geneva

    1992-01-01

    The Silicon Drift Detector (SDD) is a semiconductor, not yet extensively used in HEP experiment, which has an excellent spatial resolution and granularity about comparable to a pixel device requiring a number of readout channels two order of magnitude less.

  18. Social Networks in Silicon Valley

    Institute of Scientific and Technical Information of China (English)

    Joseph; Leu

    2006-01-01

      Social network is a dominant, distinguishing characteristic of Silicon Valley. Because innovation entails coping with a high degree of uncertainty,such innovation is particularly dependent on networks.……

  19. Surface Engineering of Polycrystalline Silicon for Long-term Mechanical Stress Endurance Enhancement in Flexible Low Temperature Poly-Si Thin-Film Transistors.

    Science.gov (United States)

    Chen, Bo-Wei; Chang, Ting-Chang; Hung, Yu-Ju; Huang, Shin-Ping; Chen, Hua-Mao; Liao, Po-Yung; Lin, Yu-Ho; Huang, Hui-Chun; Chiang, Hsiao-Cheng; Yang, Chung-I; Zheng, Yu-Zhe; Chu, Ann-Kuo; Li, Hung-Wei; Tsai, Chih-Hung; Lu, Hsueh-Hsing; Wang, Terry Tai-Jui; Chang, Tsu-Chiang

    2017-02-08

    Surface morphology in polycrystalline silicon (poly-Si) film is an issue regardless of whether conventional excimer laser annealing (ELA) or the newer metal-induced lateral crystallization (MILC) process is used. This paper investigates the stress distribution while undergoing long-term mechanical stress and the influence of stress on electrical characteristics. Our simulated results show that the non-uniform stress in the gate insulator is more pronounced near the polysilicon/gate insulator edge and at the two sides of the polysilicon protrusion. This stress results in defects in the gate insulator and leads to a non-uniform degradation phenomenon, which affects both the performance and reliability in thin-film transistors (TFTs). The degree of degradation is similar regardless of bending axis (channel-length axis, channel-width axis) or bending type (compression, tension), which means that the degradation is dominated by the protrusion effects. Furthermore, by utilizing long-term electrical bias stresses after undergoing long-tern bending stress, it is apparent that the carrier injection is severe in the sub-channel region, which confirms that the influence of protrusions is crucial. To eliminate the influence of surface morphology in poly-Si, three kinds of laser energy density were used during crystallization to control the protrusion height. The device with lowest protrusions demonstrates the smallest degradation after undergoing long-term bending.

  20. Formation of silicon-on-insulator layer with midair cavity for meniscus force-mediated layer transfer and high-performance transistor fabrication on glass

    Science.gov (United States)

    Akazawa, Muneki; Sakaike, Kohei; Higashi, Seiichiro

    2015-08-01

    We attempted to transfer a phosphorus ion (P+)-implanted oxidized silicon-on-insulator (SOI) layer with a midair cavity to a glass substrate using meniscus force at a low temperature. The SiO2 column size was controlled by etching time and the minimum column size was 104 nm. The transfer yield of the implanted sample was significantly improved by decreasing the column size, and the maximum transfer yield was 95% when the implantation dose was 1 × 1015 cm-2. The causes of increasing transfer yield are considered to be the tapered SiO2 column shape and the hydrophilicity of the surface of oxidized samples with implantation. N-channel thin-film transistors (TFTs) fabricated using the films on glass at 300 °C showed a field-effect mobility of 505 cm2 V-1 s-1, a threshold voltage of 2.47 V and a subthreshold swing of 324 mV/dec. on average.

  1. Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

    2015-01-01

    An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration.......An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

  2. Silicone-Rubber Stitching Seal

    Science.gov (United States)

    Wang, D. S.

    1985-01-01

    Fabric products protected from raveling by coating threads and filling stitching holes with silicone rubber. Uncored silicone rubber applied to stitching lines with air-pressurized sealant gun. Next, plastic release film placed on coated side, and blanket flipped over so release film lies underneath. Blanket then bagged and adhesive cured under partial vacuum of about 3.5 psi or under pressure. Applications include balloons, parachutes, ultralight aircraft, sails, rescue harnesses, tents, or other fabric products highly stressed in use.

  3. Silicon superconducting quantum interference device

    Energy Technology Data Exchange (ETDEWEB)

    Duvauchelle, J. E.; Francheteau, A.; Marcenat, C.; Lefloch, F., E-mail: francois.lefloch@cea.fr [Université Grenoble Alpes, CEA - INAC - SPSMS, F-38000 Grenoble (France); Chiodi, F.; Débarre, D. [Université Paris-sud, CNRS - IEF, F-91405 Orsay - France (France); Hasselbach, K. [Université Grenoble Alpes, CNRS - Inst. Néel, F-38000 Grenoble (France); Kirtley, J. R. [Center for probing at nanoscale, Stanford University, Palo Alto, California 94305-4045 (United States)

    2015-08-17

    We have studied a Superconducting Quantum Interference Device (SQUID) made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the gas immersion laser doping technique. The SQUID is composed of two nano-bridges (Dayem bridges) in a loop and shows magnetic flux modulation at low temperature and low magnetic field. The overall behavior shows very good agreement with numerical simulations based on the Ginzburg-Landau equations.

  4. Silicon Sensors for HEP Experiments

    CERN Document Server

    Dierlamm, Alexander Hermann

    2017-01-01

    With increasing luminosity of accelerators for experiments in High Energy Physics the demands on the detectors increase as well. Especially tracking and vertexing detectors made of silicon sensors close to the interaction point need to be equipped with more radiation hard devices. This article introduces the different types of silicon sensors, describes measures to increase radiation hardness and provides an overview of present upgrade choices of HEP experiments.

  5. SILICON CARBIDE CERAMICS FOR COMPACT HEAT EXCHANGERS

    Energy Technology Data Exchange (ETDEWEB)

    DR. DENNIS NAGLE; DR. DAJIE ZHANG

    2009-03-26

    Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making high dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure which allows complete conversion of the carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low chemical reactivity and porosity while the cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800 C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm{sup -3} (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process was studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal conductivities of most commercial Si

  6. SILICON CARBIDE CERAMICS FOR COMPACT HEAT EXCHANGERS

    Energy Technology Data Exchange (ETDEWEB)

    DR. DENNIS NAGLE; DR. DAJIE ZHANG

    2009-03-26

    Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making high dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure which allows complete conversion of the carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low chemical reactivity and porosity while the cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800 C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm{sup -3} (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process was studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal conductivities of most commercial Si

  7. Deposited low temperature silicon GHz modulator

    CERN Document Server

    Lee, Yoon Ho Daniel; Lipson, Michal

    2013-01-01

    The majority of silicon photonics is built on silicon-on-insulator (SOI) wafers while the majority of electronics, including CPUs and memory, are built on bulk silicon wafers, limiting broader acceptance of silicon photonics. This discrepancy is a result of silicon photonics's requirement for a single-crystalline silicon (c-Si) layer and a thick undercladding for optical guiding that bulk silicon wafers to not provide. While the undercladding problem can be partially addressed by substrate removal techniques, the complexity of co-integrating photonics with state-of-the-art transistors and real estate competition between electronics and photonics remain problematic. We show here a platform for deposited GHz silicon photonics based on polycrystalline silicon with high optical quality suitable for high performance electro-optic devices. We demonstrate 3 Gbps polysilicon electro-optic modulator fabricated on a deposited polysilicon layer fully compatible with CMOS backend integration. These results open up an arr...

  8. Direct Production of Silicones From Sand

    Energy Technology Data Exchange (ETDEWEB)

    Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

    2001-09-30

    Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

  9. Silicon active photonic devices

    Science.gov (United States)

    Dimitropoulos, Dimitrios

    Active photonic devices utilizing the optical nonlinearities of silicon have emerged in the last 5 years and the effort for commercial photonic devices in the material that has been the workhorse of electronics has been building up since. This dissertation presents the theory for some of these devices. We are concerned herein with CW lasers, amplifiers and wavelength converters that are based on the Raman effect. There have already been cursory experimental demonstrations of these devices and some of their limitations are already apparent. Most of the limitations observed are because of the appearance of effects that are competing with stimulated Raman scattering. Under the high optical powers that are necessary for the Raman effect (tens to hundrends of mW's) the process of optical two-photon (TPA) absorption occurs. The absorption of optical power that it causes itself is weak but in the process electrons and holes are generated which can further absorb light through the free-carrier absorption effect (FCA). The effective "lifetime" that these carriers have determines the magnitude of the FCA loss. We present a model for the carrier lifetime in Silicon-On-Insulator (SOI) waveguides and numerical simulations to understand how this critical parameter varies and how it can be controlled. A p-i-n junction built along SOI waveguides can help achieve lifetime of the order of 20--100 ps but the price one has to pay is on-chip electrical power consumption on the order of 100's of mWs. We model CW Raman lasers and we find that the carrier lifetime reduces the output power. If the carrier lifetime exceeds a certain "critical" value optical losses become overwhelming and lasing is impossible. As we show, in amplifiers, the nonlinear loss does not only result in diminished gain, but also in a higher noise figure. Finally the effect of Coherent anti-Stokes Raman scattering (CARS) is examined. The effect is important because with a pump frequency at 1434nm coherent power

  10. Investigation and optimization of series connection of thin-film silicon solar modules; Untersuchung und Optimierung der Serienverschaltung von Silizium-Duennschicht-Solarmodulen

    Energy Technology Data Exchange (ETDEWEB)

    Haas, Stefan

    2010-07-01

    The integrated series connection is an important and elementary part of a thin-film silicon solar module. The series connection leads to a reduction of Ohmic losses and an increase of the module voltage. After their deposition the different functional layers of a solar module must be patterned selectively to form a series connection. First the front contact, then the absorber, and finally the back contact is locally removed. The first step and the last step are needed to separate the contact layers (isolation step), the absorber patterning is used to expose the front contact and prepare the series interconnection. Usually laser ablation is used for patterning. The patterning of the front contact is overall a noncritical step. Therefore, this thesis exclusively investigates mechanisms that limit the process window of the absorber patterning and the back contact patterning. Especially for the absorber patterning on SnO{sub 2}-substrates the process window is very narrow. As too high pulse energies create a barrier layer on the SnO{sub 2}-window layer, which restricts the current flow in a series connected module. This barrier layer probably consists of SiO{sub 2} or an alloy of (Sn,Si)O{sub 2}. It arrises from redeposition of evaporated silicon. Ablation of the absorber without creating a barrier layer is only possible, when the silicon is not evaporated. Here the ablation is induced by the explosive out-diffusion of hydrogen from the silicon layer. On ZnO-substrates no significant barrier formation occurs. For this reason the process window is very broad. Patterning the back contact is the last isolation step. It is mainly restricted by an unavoidable deterioration of the absorber as well as a possible ablation of the window layer. The deterioration of the absorber in the vicinity of the patterning groove leads to parasitic dark currents for amorphous and for microcrystalline solar cells. The parasitic dark currents decrease the efficiency {eta} of a patterned

  11. Silicon Tetrafluoride on Io

    CERN Document Server

    Schaefer, L; Schaefer, Laura

    2005-01-01

    Silicon tetrafluoride (SiF4) is observed in terrestrial volcanic gases and is predicted to be the major F - bearing species in low temperature volcanic gases on Io (Schaefer and Fegley, 2005b). SiF4 gas is also a potential indicator of silica-rich crust on Io. We used F/S ratios in terrestrial and extraterrestrial basalts, and gas/lava enrichment factors for F and S measured at terrestrial volcanoes to calculate equilibrium SiF4/SO2 ratios in volcanic gases on Io. We conclude that SiF4 can be produced at levels comparable to the observed NaCl/SO2 gas ratio. We also considered potential loss processes for SiF4 in volcanic plumes and in Io's atmosphere including ion-molecule reactions, electron chemistry, photochemistry, reactions with the major atmospheric constituents, and condensation. Photochemical destruction (tchem ~ 266 days) and/or condensation as Na2SiF6 (s) appear to be the major sinks for SiF4. We recommend searching for SiF4 with infrared spectroscopy using its 9.7 micron band as done on Earth.

  12. Collimation: a silicon solution

    CERN Multimedia

    2007-01-01

    Silicon crystals could be used very efficiently to deflect high-energy beams. Testing at CERN has produced conclusive results, which could pave the way for a new generation of collimators. The set of five crystals used to test the reflection of the beams. The crystals are 0.75 mm wide and their alignment is adjusted with extreme precision. This figure shows the deflection of a beam by channelling and by reflection in the block of five crystals. Depending on the orientation of the crystals: 1) The beam passes without "seeing" the crystals and is not deflected 2) The beam is deflected by channelling (with an angle of around 100 μrad) 3) The beam is reflected (with an angle of around 50 μrad). The intensity of the deflected beam is illustrated by the intensity of the spot. The spot of the reflected beam is clearly more intense than that one of the channelled beam, demonstrating the efficiency of t...

  13. Nanoporous silicon oxide memory.

    Science.gov (United States)

    Wang, Gunuk; Yang, Yang; Lee, Jae-Hwang; Abramova, Vera; Fei, Huilong; Ruan, Gedeng; Thomas, Edwin L; Tour, James M

    2014-08-13

    Oxide-based two-terminal resistive random access memory (RRAM) is considered one of the most promising candidates for next-generation nonvolatile memory. We introduce here a new RRAM memory structure employing a nanoporous (NP) silicon oxide (SiOx) material which enables unipolar switching through its internal vertical nanogap. Through the control of the stochastic filament formation at low voltage, the NP SiOx memory exhibited an extremely low electroforming voltage (∼ 1.6 V) and outstanding performance metrics. These include multibit storage ability (up to 9-bits), a high ON-OFF ratio (up to 10(7) A), a long high-temperature lifetime (≥ 10(4) s at 100 °C), excellent cycling endurance (≥ 10(5)), sub-50 ns switching speeds, and low power consumption (∼ 6 × 10(-5) W/bit). Also provided is the room temperature processability for versatile fabrication without any compliance current being needed during electroforming or switching operations. Taken together, these metrics in NP SiOx RRAM provide a route toward easily accessed nonvolatile memory applications.

  14. [Tableting technology of a dry extract from Solidago virgaurea L. with the use of silicified microcrystalline cellulose (Prosolv) and other selected auxiliary substances].

    Science.gov (United States)

    Marczyiński, Zbigniew

    2009-01-01

    Direct tableting is simpler and more cost-effective from the point of view of good manufacturing practice (GMP) than wet granulation or dry compacting. Moreover, the use of dry plant extracts in the process of direct tableting, omitting granulation, decreases the possibility of biological activity loss of active substances. Thus, pharmaceutical industry uses this particular process more and more frequently. Only few therapeutic substances form under compression tablets meeting current requirements. Very often addition of auxiliary substances appears to be indispensable. The aim of this study was to obtain uncoated tablets by the method of direct tableting with the use of selected auxiliary substances. Dry extract from Solidago virgaurea L. was the study material. Shrimp chitosan, silicified microcrystalline cellulose (Prosolv), polyvinylpyrrolidone, calcium carbonate and sodium stearyl fumarate were used as auxiliary substances. Eleven tablet batches were manufactured in a reciprocating instrumented tableting machine (Ewreka). The produced tablets were subjected to morphological tests comprising the tablet size, determination of batching accuracy (determination of mass uniformity of individual tablets), test of mechanical resistance (crushing strength), determination of disintegration time. The statistical hardness of the manufactured tablets was also estimated. Pharmaceutical availability tests were performed of the biologically active substances released from tablets to the acceptor fluid. The study was based on general and detailed regulations of Polish Pharmacopoeia VII (PP VII). The obtained results allow to conclude that the applied auxiliary substances appeared to be useful in adequate proportions in manufacturing tablets containing dry extract from Solidago virgaurea L. The properties of the obtained batches of tablets were in majority consistent with the current requirements. The applied method provides technological reproducibility and high durability of

  15. Virus-Like Particle (VLP Plus Microcrystalline Tyrosine (MCT Adjuvants Enhance Vaccine Efficacy Improving T and B Cell Immunogenicity and Protection against Plasmodium berghei/vivax

    Directory of Open Access Journals (Sweden)

    Gustavo Cabral-Miranda

    2017-05-01

    Full Text Available Vaccination is the most effective prophylactic tool against infectious diseases. Despite continued efforts to control malaria, the disease still generally represents a significant unmet medical need. Microcrystalline tyrosine (MCT is a well described depot used in licensed allergy immunotherapy products and in clinical development. However, its proof of concept in prophylactic vaccines has only recently been explored. MCT has never been used in combination with virus-like particles (VLPs, which are considered to be one of the most potent inducers of cellular and humoral immune responses in mice and humans. In the current study we assessed the potential of MCT to serve as an adjuvant in the development of a vaccine against malaria either alone or combined with VLP using Plasmodium vivax thrombospondin-related adhesive protein (TRAP as a target antigen. We chemically coupled PvTRAP to VLPs derived from the cucumber mosaic virus fused to a universal T-cell epitope of the tetanus toxin (CMVtt, formulated with MCT and compared the induced immune responses to PvTRAP formulated in PBS or Alum. The protective capacity of the various formulations was assessed using Plasmodium berghei expressing PvTRAP. All vaccine formulations using adjuvants and/or VLP increased humoral immunogenicity for PvTRAP compared to the antigen alone. The most proficient responder was the group of mice immunized with the vaccine formulated with PvTRAP-VLP + MCT. The VLP-based vaccine formulated in MCT also induced the strongest T cell response and conferred best protection against challenge with recombinant Plasmodium berghei. Thus, the combination of VLP with MCT may take advantage of the properties of each component and appears to be an alternative biodegradable depot adjuvant for development of novel prophylactic vaccines.

  16. Conformation of Sodium Microcrystalline Cellulose Sulfate in Aqueous Solution%微晶纤维素硫酸钠溶液的构象

    Institute of Scientific and Technical Information of China (English)

    李琳; 熊文雯; 王兆梅

    2006-01-01

    Sodium microcrystalline cellulose sulfate ( NaCSMC) is a new type of effective anti-coagulant, whose anti-coagulant activity is closely related to the conformation in solution. In order to reveal the anti-coagulant activity of NaCSMC, the conformation of NaCSMC in aqueous solution was investigated by the optical rotation measurement, the viscosity analysis and the Congo red helix-coil transition analysis. The measurement results of optical rotation show that the conformation of NaCSMC is regular in neutral or weak alkaline solution. The same results can also be obtained by means of viscosity analysis. Moreover, it is indicated by the Congo red helix-coil transition analysis that the conformation of NaCSMC in aqueous solution is of not only regular conformation but also single helix and multi-helix structures.%微晶纤维素硫酸钠是一种具有显著抗凝血活性的物质,其抗凝活性与其在溶液中的构象密切相关.为了解其抗凝活性,文中通过旋光度分析、粘度分析和刚果红螺旋-线团过渡分析,研究了微晶纤维素硫酸钠溶液的构象.旋光度分析表明,微晶纤维素硫酸钠在水溶液或弱碱溶液中具有规则的空间构象;由粘度分析也可得出同样的结果;刚果红螺旋-线团过渡分析表明,微晶纤维素硫酸钠在溶液中具有规则的空间构象,同时具有单螺旋结构与高级螺旋结构.

  17. To Evaluate the Effect of Solvents and Different Relative Humidity Conditions on Thermal and Rheological Properties of Microcrystalline Cellulose 101 Using METHOCEL™ E15LV as a Binder.

    Science.gov (United States)

    Jagia, Moksh; Trivedi, Maitri; Dave, Rutesh H

    2016-08-01

    The solvent used for preparing the binder solution in wet granulation can affect the granulation end point and also impact the thermal, rheological, and flow properties of the granules. The present study investigates the effect of solvents and percentage relative humidity (RH) on the granules of microcrystalline cellulose (MCC) with hydroxypropyl methyl cellulose (HPMC) as the binder. MCC was granulated using 2.5% w/w binder solution in water and ethanol/water mixture (80:20 v/v). Prepared granules were dried until constant percentage loss on drying, sieved, and further analyzed. Dried granules were exposed to different percentage RH for 48 h at room temperature. Powder rheometer was used for the rheological and flow characterization, while thermal effusivity and differential scanning calorimeter were used for thermal analysis. The thermal effusivity values for the wet granules showed a sharp increase beginning 50% w/w binder solution in both cases, which reflected the over-wetting of granules. Ethanol/water solvent batches showed greater resistance to flow as compared to the water solvent batches in the wet granule stage, while the reverse was true for the dried granule stage, as evident from the basic flowability energy values. Although the solvents used affected the equilibration kinetics of moisture content, the RH-exposed granules remained unaffected in their flow properties in both cases. This study indicates that the solvents play a vital role on the rheology and flow properties of MCC granules, while the different RH conditions have little or no effect on them for the above combination of solvent and binder.

  18. Ultrafast Terahertz Conductivity of Photoexcited Nanocrystalline Silicon

    DEFF Research Database (Denmark)

    Cooke, David; MacDonald, A. Nicole; Hryciw, Aaron;

    2007-01-01

    The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described by a class......The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described...

  19. Preparation and microwave properties of Y-type magnetoplumbite microcrystalline glass ceramic with the composition 0.5(Ba{sub 2}Zn{sub Z}Co{sub 2-Z}Fe{sub 12}O{sub 22}).0.5SiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, H.; Yao, X.; Zhang, L. [High Temperature Ceramics Inst., Zhengzhou Univ., Henan (China)

    2002-02-01

    The citrate sol-gel synthesis technique was used to prepared Ba{sub 2}Zn{sub Z}Co{sub 2-Z}Fe{sub 12}O{sub 22}/SiO{sub 2} microcrystalline glass ceramic with Z=2.0,1.6,1.2, and 0.8. Several methods such as X-ray diffractometry, scanning electron microscopy and HP vector network analyzer were used to obtain detailed information on the crystallography and magnetic properties of Ba{sub 2}Zn{sub Z}Co{sub 2-Z}Fe{sub 12}O{sub 22}/SiO{sub 2} microcrystalline glass ceramic. The correlation of the formation of Ba{sub 2}Zn{sub Z}Co{sub 2-Z}Fe{sub 12}O{sub 22}/SiO{sub 2} microcrystalline glass ceramic with thermal treatment was studied. The complex dielectric constant and complex permeability of microcrystalline glass ceramic-paraffin wax composites were measured by the transmission/reflection coaxial line method in the range from 100MHz to 6 GHz. The effects of composition, annealing temperature and measuring frequency on complex permittivity and permeability of Ba{sub 2}Zn{sub Z}Co{sub 2-Z}Fe{sub 12}O{sub 22}/SiO{sub 2} microcrystalline glass ceramic were also investigated. (orig.)

  20. Next generation structural silicone glazing

    Directory of Open Access Journals (Sweden)

    Charles D. Clift

    2015-06-01

    Full Text Available This paper presents an advanced engineering evaluation, using nonlinear analysis of hyper elastic material that provides significant improvement to structural silicone glazing (SSG design in high performance curtain wall systems. Very high cladding wind pressures required in hurricane zones often result in bulky SSG profile dimensions. Architectural desire for aesthetically slender curtain wall framing sight-lines in combination with a desire to reduce aluminium usage led to optimization of silicone material geometry for better stress distribution.To accomplish accurate simulation of predicted behaviour under structural load, robust stress-strain curves of the silicone material are essential. The silicone manufacturer provided physical property testing via a specialized laboratory protocol. A series of rigorous curve fit techniques were then made to closely model test data in the finite element computer analysis that accounts for nonlinear strain of hyper elastic silicone.Comparison of this advanced design technique to traditional SSG design highlights differences in stress distribution contours in the silicone material. Simplified structural engineering per the traditional SSG design method does not provide accurate forecasting of material and stress optimization as shown in the advanced design.Full-scale specimens subject to structural load testing were performed to verify the design capacity, not only for high wind pressure values, but also for debris impact per ASTM E1886 and ASTM E1996. Also, construction of the test specimens allowed development of SSG installation techniques necessitated by the unique geometry of the silicone profile. Finally, correlation of physical test results with theoretical simulations is made, so evaluation of design confidence is possible. This design technique will introduce significant engineering advancement to the curtain wall industry.