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Sample records for microcrystalline silicon prepared

  1. Preparation and Characterisation of Amorphous-silicon Photovoltaic Devices Having Microcrystalline Emitters

    International Nuclear Information System (INIS)

    Gutierrez, M. T.; Gandia, J. J.; Carabe, J.

    1999-01-01

    The present work summarises the essential aspects of the research carried out so far at CIEMAT on amorphous-silicon solar cells. The experience accumulated on the preparation and characterisation of amorphous and microcrystalline silicon has allowed to start from intrinsic (absorbent) and p- and n-type (emitters) materials not only having excellent optoelectronic properties, but enjoying certain technological advantages with respect to those developed by other groups. Among these are absorbent-layer growth rates between 5 and 10 times as fast as conventional ones and microcrystalline emitters prepared without using hydrogen. The preparation of amorphous-silicon cells has required the solution of a number of problems, such as those related to pinholes, edge leak currents and diffusion of metals into the semiconductor. Once such constraints have been overcome, it has been demonstrated not only that the amorphous-silicon technology developed at CIEMAT is valid for making solar cells, but also that the quality of the semiconductor material is good for the application according to the partial results obtained. The development of thin-film laser-scribing technology is considered essential. Additionally it has been concluded that cross contamination, originated by the fact of using a single-chamber reactor, is the basic factor limiting the quality of the cells developed at CIEMAT. The present research activity is highly focused on the solution of this problem. (Author)23 refs

  2. Development of Doped Microcrystalline Silicon Oxide and its Application to Thin‑Film Silicon Solar Cells

    NARCIS (Netherlands)

    Lambertz, A.

    2015-01-01

    The aim of the present study is the development of doped microcrystalline silicon oxide (µc‑SiOx:H) alloys and its application in thin‑film silicon solar cells. The doped µc‑SiOx:H material was prepared from carbon dioxide (CO2), silane (SiH4), hydrogen (H2) gas mixtures using plasma enhanced

  3. Plasma processing of microcrystalline silicon films : filling in the gaps

    NARCIS (Netherlands)

    Bronneberg, A.C.

    2012-01-01

    Hydrogenated microcrystalline silicon (µc-Si:H) is a mixed-phase material consisting of crystalline silicon grains, hydrogenated amorphous silicon (a-Si:H) tissue, and voids. Microcrystalline silicon is extensively used as absorber layer in thin-film tandem solar cells, combining the advantages of a

  4. Relationship between defect density and charge carrier transport in amorphous and microcrystalline silicon

    International Nuclear Information System (INIS)

    Astakhov, Oleksandr; Carius, Reinhard; Finger, Friedhelm; Petrusenko, Yuri; Borysenko, Valery; Barankov, Dmytro

    2009-01-01

    The influence of dangling-bond defects and the position of the Fermi level on the charge carrier transport properties in undoped and phosphorous doped thin-film silicon with structure compositions all the way from highly crystalline to amorphous is investigated. The dangling-bond density is varied reproducibly over several orders of magnitude by electron bombardment and subsequent annealing. The defects are investigated by electron-spin-resonance and photoconductivity spectroscopies. Comparing intrinsic amorphous and microcrystalline silicon, it is found that the relationship between defect density and photoconductivity is different in both undoped materials, while a similar strong influence of the position of the Fermi level on photoconductivity via the charge carrier lifetime is found in the doped materials. The latter allows a quantitative determination of the value of the transport gap energy in microcrystalline silicon. The photoconductivity in intrinsic microcrystalline silicon is, on one hand, considerably less affected by the bombardment but, on the other hand, does not generally recover with annealing of the defects and is independent from the spin density which itself can be annealed back to the as-deposited level. For amorphous silicon and material prepared close to the crystalline growth regime, the results for nonequilibrium transport fit perfectly to a recombination model based on direct capture into neutral dangling bonds over a wide range of defect densities. For the heterogeneous microcrystalline silicon, this model fails completely. The application of photoconductivity spectroscopy in the constant photocurrent mode (CPM) is explored for the entire structure composition range over a wide variation in defect densities. For amorphous silicon previously reported linear correlation between the spin density and the subgap absorption is confirmed for defect densities below 10 18 cm -3 . Beyond this defect level, a sublinear relation is found i.e., not

  5. Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells

    International Nuclear Information System (INIS)

    Finger, F.; Astakhov, O.; Bronger, T.; Carius, R.; Chen, T.; Dasgupta, A.; Gordijn, A.; Houben, L.; Huang, Y.; Klein, S.; Luysberg, M.; Wang, H.; Xiao, L.

    2009-01-01

    Crystalline silicon carbide alloys have a very high potential as transparent conductive window layers in thin-film solar cells provided they can be prepared in thin-film form and at compatible deposition temperatures. The low-temperature deposition of such material in microcrystalline form (μc-Si:C:H) was realized by use of monomethylsilane precursor gas diluted in hydrogen with the Hot-Wire Chemical Vapor Deposition process. A wide range of deposition parameters has been investigated and the structural, electronic and optical properties of the μc-SiC:H thin films have been studied. The material, which is strongly n-type from unintentional doping, has been used as window layer in n-side illuminated microcrystalline silicon solar cells. High short-circuit current densities are obtained due to the high transparency of the material resulting in a maximum solar cell conversion efficiency of 9.2%.

  6. Preparation and Characterisation of Amorphous-silicon Photovoltaic Devices Having Microcrystalline Emitters; Preparacion y Caracterizacion de Dispositivos Fotovoltaicos de Silicio Amorfo con Emisiones Microcristalinos

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, M. T.; Gandia, J. J.; Carabe, J. [CIEMAT. Madrid (Spain)

    1999-11-01

    The present work summarises the essential aspects of the research carried out so far at CIEMAT on amorphous-silicon solar cells. The experience accumulated on the preparation and characterisation of amorphous and microcrystalline silicon has allowed to start from intrinsic (absorbent) and p-and n-type (emitters) materials not only having excellent optoelectronic properties, but enjoying certain technological advantages with respect to those developed by other groups. Among these are absorbent-layer growth rates between 5 and 10 times as fast as conventional ones and microcrystalline emitters prepared without using hydrogen. The preparation of amorphous-silicon cells has required the solution of a number of problems, such as those related to pinholes, edge leak currents and diffusion of metals into the semiconductor. Once such constraints have been overcome, it has been demonstrated not only that the amorphous-silicon technology developed at CIEMAT is valid for making solar cells, but also that the quality of the semiconductor material is good for the application according to the partial results obtained. The development of thin-film laser-scribing technology is considered essential. Additionally it has been concluded that cross contamination, originated by the fact of using a single-chamber reactor, is the basic factor limiting the quality of the cells developed at CIEMAT. The present research activity is highly focused on the solution of this problem. (Author)

  7. Analysis of heating effect on the process of high deposition rate microcrystalline silicon

    International Nuclear Information System (INIS)

    Xiao-Dan, Zhang; He, Zhang; Chang-Chun, Wei; Jian, Sun; Guo-Fu, Hou; Shao-Zhen, Xiong; Xin-Hua, Geng; Ying, Zhao

    2010-01-01

    A possible heating effect on the process of high deposition rate microcrystalline silicon has been studied. It includes the discharge time-accumulating heating effect, discharge power, inter-electrode distance, and total gas flow rate induced heating effect. It is found that the heating effects mentioned above are in some ways quite similar to and in other ways very different from each other. However, all of them will directly or indirectly cause the increase of the substrate surface temperature during the process of depositing microcrystalline silicon thin films, which will affect the properties of the materials with increasing time. This phenomenon is very serious for the high deposition rate of microcrystalline silicon thin films because of the high input power and the relatively small inter-electrode distance needed. Through analysis of the heating effects occurring in the process of depositing microcrystalline silicon, it is proposed that the discharge power and the heating temperature should be as low as possible, and the total gas flow rate and the inter-electrode distance should be suitable so that device-grade high quality deposition rate microcrystalline silicon thin films can be fabricated

  8. Plasma deposition of microcrystalline silicon solar cells. Looking beyond the glass

    Energy Technology Data Exchange (ETDEWEB)

    Donker, M.N. van den

    2006-07-01

    Microcrystalline silicon emerged in the past decade as highly interesting material for application in efficient and stable thin film silicon solar cells. It consists of nanometer-sized crystallites embedded in a micrometer-sized columnar structure, which gradually evolves during the SiH{sub 4} based deposition process starting from an amorphous incubation layer. Understanding of and control over this transient and multi-scale growth process is essential in the route towards low-cost microcrystalline silicon solar cells. This thesis presents an experimental study on the technologically relevant high rate (5-10 Aa s{sup -1}) parallel plate plasma deposition process of state-of-the-art microcrystalline silicon solar cells. The objective of the work was to explore and understand the physical limits of the plasma deposition process as well as to develop diagnostics suitable for process control in eventual solar cell production. Among the developed non-invasive process diagnostics were a pyrometer, an optical spectrometer, a mass spectrometer and a voltage probe. Complete thin film silicon solar cells and modules were deposited and characterized. (orig.)

  9. Carrier mobilities in microcrystalline silicon films

    International Nuclear Information System (INIS)

    Bronger, T.; Carius, R.

    2007-01-01

    For a better understanding of electronic transport mechanisms in thin-film silicon solar cell quality films, we have investigated the Hall mobility for electrons in microcrystalline/amorphous silicon over a range of crystallinities and doping concentrations. We find that Hall mobility increases with increasing doping concentration in accordance with earlier measurements. With increasing amorphous fraction, the measured mobility decreases suggesting a negative influence of the additional disorder. The results suggest a differential mobility model in which mobility depends on the energy level of the carriers that contribute to the electrical current

  10. Effect of silane/hydrogen ratio on microcrystalline silicon thin films by remote inductively coupled plasma

    Science.gov (United States)

    Guo, Y. N.; Wei, D. Y.; Xiao, S. Q.; Huang, S. Y.; Zhou, H. P.; Xu, S.

    2013-05-01

    Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by remote low frequency inductively coupled plasma (ICP) chemical vapor deposition system, and the effect of silane/hydrogen ratio on the microstructure and electrical properties of μc-Si:H films was systematically investigated. As silane/hydrogen ratio increases, the crystalline volume fraction Fc decreases and the ratio of the intensity of (220) peak to that of (111) peak drops as silane flow rate is increased. The FTIR result indicates that the μc-Si:H films prepared by remote ICP have a high optical response with a low hydrogen content, which is in favor of reducing light-induced degradation effect. Furthermore, the processing window of the phase transition region for remote ICP is much wider than that for typical ICP. The photosensitivity of μc-Si:H films can exceed 100 at the transition region and this ensures the possibility of the fabrication of microcrystalline silicon thin film solar cells with a open-circuit voltage of about 700 mV.

  11. Influence of ion bombardment on microcrystalline silicon material quality and solar cell performances

    OpenAIRE

    Bugnon, G; Feltrin, A; Sculati-Meillaud, F; Bailat, J; Ballif, C

    2008-01-01

    Microcrystalline hydrogenated silicon growth with VHF-PECVD was examined in an industrial type parallel plate KAITM reactor. The influence of pressure on material quality was studied in single junction solar cells. Solar cells with their intrinsic layer prepared at higher pressures exhibit remarkable improvements, reaching 8.2% efficiency at 3.5 mbar. Further analyzes showed that μc- Si:H intrinsic layers grown at higher pressures have a significantly lower defect density. These results are a...

  12. Post-deposition thermal annealing studies of hydrogenated microcrystalline silicon deposited at 40 deg. C

    International Nuclear Information System (INIS)

    Bronsveld, P.C.P.; Wagt, H.J. van der; Rath, J.K.; Schropp, R.E.I.; Beyer, W.

    2007-01-01

    Post-deposition thermal annealing studies, including gas effusion measurements, measurements of infrared absorption versus annealing state, cross-sectional transmission electron microscopy (X-TEM) and atomic force microscopy (AFM), are used for structural characterization of hydrogenated amorphous and microcrystalline silicon films, prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at low substrate temperature (T S ). Such films are of interest for application in thin semiconductor devices deposited on cheap plastics. For T S ∼ 40 deg. C, H-evolution shows rather complicated spectra for (near-) microcrystalline material, with hydrogen effusion maxima seen at ∼ 200-250 deg. C, 380 deg. C and ∼ 450-500 deg. C, while for the amorphous material typical spectra for good-quality dense material are found. Effusion experiments of implanted He demonstrate for the microcrystalline material the presence of a rather open (void-rich) structure. A similar tendency can be concluded from Ne effusion experiments. Fourier Transform infrared (FTIR) spectra of stepwise annealed samples show Si-H bond rupture already at annealing temperatures of 150 deg. C. Combined AFM/X-TEM studies reveal a columnar microstructure for all of these (near-) microcrystalline materials, of which the open structure is the most probable explanation of the shift of the H-effusion maximum in (near-) microcrystalline material to lower temperature

  13. Investigation of carrier density and mobility in microcrystalline silicon alloys using Hall effect and thermopower measurements; Untersuchung der Ladungstraegerkonzentration und -beweglichkeit in mikrokristallinen Siliziumlegierungen mit Hall-Effekt und Thermokraft

    Energy Technology Data Exchange (ETDEWEB)

    Sellmer, Christian

    2012-08-31

    The electronic properties of amorphous and microcrystalline silicon layers in thin-film solar cells significantly affect the efficiency of solar cells. An important property of the individual layer is the electronic transport, which is described by the variables conductivity, photoconductivity, mobility, and carrier concentration. In the past, individual characterization methods were typically used to determine the electronic properties. Using the combination of Hall effect, conductivity, and thermoelectric power measurements additional variables can be derived, such as the effective density of states at the valence and conduction band edge, making a more detailed description of the material possible. To systematically study the electronic properties - in particular carrier mobility and carrier concentration - various series of silicon films are prepared for this work including microcrystalline silicon layers of different doping and crystallinity and a series of silicon films where the Fermi level is moved by irradiation with high energy electrons on one and the same sample. The results show that the transition from amorphous to microcrystalline transport is relatively abrupt. If the electron transport takes place in only amorphous regions, it is marked by the sign anomaly of the Hall effect. If a continuous crystalline path exists, the electronic properties are dominated by the crystalline volume fraction. The results of the measurements of silicon layers are compared with those of microcrystalline silicon carbide samples. Silicon carbide is especially interesting for future applications in thin-film solar cells due to high transparency and high conductivity. It is shown that the effective density of states at the valence and conduction band edge as a function of temperature in p- and n-type microcrystalline silicon and silicon carbide samples largely coincide with those of crystalline silicon or silicon carbide. A square root shaped profile of the density of

  14. Defect states in microcrystalline silicon probed by photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    Merdzhanova, T.; Carius, R.; Klein, S.; Finger, F.; Dimova-Malinovska, D.

    2006-01-01

    Photoluminescence (PL) spectroscopy is used to investigate defects and localized band tail states within the band gap of hydrogenated microcrystalline silicon (μc-Si:H) prepared by plasma enhanced chemical vapor deposition (PECVD) and hot wire chemical vapor deposition (HWCVD). The effect of the substrate temperature (T S ), which influences mainly the defect density, and silane concentration (SC), as Key parameter to control the microstructure of the material were varied. In high quality μc-Si:H films (T S = 185-200 deg. C) a PL band ('μc'-Si-band) is observed at ∼ 0.9-1.05 eV which is attributed to radiative recombination via localized band tail states in the microcrystalline phase. In μc-Si:H films prepared at higher T S (> 300 deg. C), an additional PL band at ∼ 0.7 eV with a width of ∼ 0.17 eV is found for both PECVD and HWCVD material. This band maintains its position at ∼ 0.7 eV with increasing SC in contrast to the observed shift of the 'μc'-Si-band to higher energies. Studies of the temperature dependences of the PL peak energy and intensity for the two bands show: (i) the PL band at 0.7 eV remains unaffected upon increasing temperature, while the 'μc'-Si-band shifts to lower energies (ii) a much weaker quenching for the 0.7 eV band compared to the 'μc'-Si-band. It was also found that the PL band at 0.7 eV exhibits a slightly stronger temperature dependence of the PL intensity compared to 'defect' band at 0.9 eV in a-Si:H suggesting similar recombination transition via deeper trap states. Due to a similar PL properties of the emission band previously observed in Czochralski-grown silicon (Cz-Si), the 0.7 eV band in μc-Si:H is assigned tentatively to defect-related transitions in the crystalline phase

  15. The atomic hydrogen flux during microcrystalline silicon solar cell deposition

    NARCIS (Netherlands)

    Sanden, van de M.C.M.; Dingemans, G.; van den Donker, M.N.; Hrunski, D.; Gordijn, A.; Kessels, W.M.M.

    2009-01-01

    Etch product detection by in situ optical emission spectroscopy is used to detect the phase transition from amorphous to microcrystalline silicon. In this contribution it is demonstrated that a calibrated version of this technique can be used to determine the absolute hydrogen flux under

  16. Fabrication of heterojunction solar cells by using microcrystalline hydrogenated silicon oxide film as an emitter

    International Nuclear Information System (INIS)

    Banerjee, Chandan; Sritharathikhun, Jaran; Konagai, Makoto; Yamada, Akira

    2008-01-01

    Wide gap, highly conducting n-type hydrogenated microcrystalline silicon oxide (μc-SiO : H) films were prepared by very high frequency plasma enhanced chemical vapour deposition at a very low substrate temperature (170 deg. C) as an alternative to amorphous silicon (a-Si : H) for use as an emitter layer of heterojunction solar cells. The optoelectronic properties of n-μc-SiO : H films prepared for the emitter layer are dark conductivity = 0.51 S cm -1 at 20 nm thin film, activation energy = 23 meV and E 04 = 2.3 eV. Czochralski-grown 380 μm thick p-type (1 0 0) oriented polished silicon wafers with a resistivity of 1-10 Ω cm were used for the fabrication of heterojunction solar cells. Photovoltaic parameters of the device were found to be V oc = 620 mV, J sc = 32.1 mA cm -2 , FF = 0.77, η = 15.32% (active area efficiency)

  17. Analysis of IV characteristics of solar cells made of hydrogenated amorphous, polymorphous and microcrystalline silicon

    International Nuclear Information System (INIS)

    Hamadeh, H.

    2009-03-01

    The IV characteristics of pin solar cells made of amorphous, polymorphous and microcrystalline silicon were investigated. The temperature dependence was measured in the temperature range between 150 K and 395 K. This range covers the most terrestrial applications condition. Using simplex procedure, the IV parameter of the cells were deduce using line fitting. It has been shown that polymorphous silicon shows electrical properties that are close to properties of microcrystalline silicon but as it is well known, polymorphous silicon shows higher absorption similar to amorphous silicon. The polymorphous silicon solar cells showed higher efficiencies, lower shunting and higher filling factors. In the above mentioned temperature range, polymorphous silicon is the better material for the manufacturing of thin film hydrogenated silicon pin solar cells. More investigations concerning the structural properties are necessary to make stronger conclusions in regards to the stability of the material, what we hope to do in the future. (author)

  18. Nucleation of microcrystalline silicon: on the effect of the substrate surface nature and nano-imprint topography

    International Nuclear Information System (INIS)

    Palmans, J; Faraz, T; Verheijen, M A; Kessels, W M M; Creatore, M

    2016-01-01

    The nucleation of microcrystalline silicon thin-films has been investigated for various substrate natures and topographies. An earlier nucleation onset on aluminium-doped zinc oxide compared to glass substrates has been revealed, associated with a microstructure enhancement and reduced surface energy. Both aspects resulted in a larger crystallite density, following classical nucleation theory. Additionally, the nucleation onset was (plasma deposition) condition-dependent. Therefore, surface chemistry and its interplay with the plasma have been proposed as key factors affecting nucleation and growth. As such, preliminary proof of the substrate nature’s role in microcrystalline silicon growth has been provided. Subsequently, the impact of nano-imprint lithography prepared surfaces on the initial microcrystalline silicon growth has been explored. Strong topographies, with a 5-fold surface area enhancement, led to a reduction in crystalline volume fraction of ∼20%. However, no correlation between topography and microstructure has been found. Instead, the suppressed crystallization has been partially ascribed to a reduced growth flux, limited surface diffusion and increased incubation layer thickness, originating from the surface area enhancement when transiting from flat to nanostructured surfaces. Furthermore, fundamental plasma parameters have been reviewed in relation with surface topography. Strong topographies are not expected to affect the ion-to-growth flux ratio. However, the reduced ion flux (due to increasing surface area) further limited the already weak ion energy transfer to surface processes. Additionally, the atomic hydrogen flux, i.e. the driving force for microcrystalline growth, has been found to decrease by a factor of 10 when transiting from flat to nanostructured topography. This resulted in an almost 6-fold reduction of the hydrogen-to-growth flux ratio, a much stronger effect than the ion-to-growth flux ratio. Since previous studies regarding

  19. Ultrafast carrier dynamics in microcrystalline silicon probed by time-resolved terahertz spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Fekete, Ladislav; Kužel, Petr; Němec, Hynek; Kadlec, Filip; Deyneka, Alexander; Stuchlík, Jiří; Fejfar, Antonín

    2009-01-01

    Roč. 79, č. 11 (2009), 115306/1-115306/13 ISSN 1098-0121 R&D Projects: GA MŠk(CZ) LC06040; GA AV ČR(CZ) IAA100100902 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z10100521 Keywords : microcrystalline silicon * amorphous silicon * terahertz * ultrafast * photoconductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009

  20. Microcrystalline silicon, grain boundaries and role of oxygen

    Czech Academy of Sciences Publication Activity Database

    Kočka, Jan; Stuchlíková, The-Ha; Ledinský, Martin; Stuchlík, Jiří; Mates, Tomáš; Fejfar, Antonín

    2009-01-01

    Roč. 93, č. 8 (2009), s. 1444-1447 ISSN 0927-0248 R&D Projects: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA ČR(CZ) GD202/05/H003; GA MŠk LC510; GA AV ČR IAA1010413 Institutional research plan: CEZ:AV0Z10100521 Keywords : microcrystalline silicon * grain boundaries * electronic transport * hydrogen * oxygen Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.858, year: 2009

  1. Patterning of hydrogenated microcrystalline silicon growth by magnetic field

    Czech Academy of Sciences Publication Activity Database

    Fejfar, Antonín; Stuchlík, Jiří; Mates, Tomáš; Ledinský, Martin; Honda, Shinya; Kočka, Jan

    2005-01-01

    Roč. 87, č. 1 (2005), 011901/1-011901/3 ISSN 0003-6951 R&D Projects: GA AV ČR(CZ) IAA1010316; GA AV ČR(CZ) IAA1010413; GA ČR(CZ) GD202/05/H003 Institutional research plan: CEZ:AV0Z10100521 Keywords : hydrogenated microcrystalline silicon * magnetic field growth Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.127, year: 2005

  2. Microcrystalline silicon prepared at magnetic field modified nucleation

    Czech Academy of Sciences Publication Activity Database

    Kočka, Jan; Mates, Tomáš; Ledinský, Martin; Stuchlíková, The-Ha; Stuchlík, Jiří; Fejfar, Antonín

    2006-01-01

    Roč. 352, - (2006), s. 901-905 ISSN 0022-3093 R&D Projects: GA MŽP(CZ) SM/300/1/03; GA MŽP(CZ) SN/3/172/05; GA AV ČR(CZ) IAA1010316; GA AV ČR(CZ) IAA1010413; GA MŠk(CZ) LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : amorphous semiconductors * nucleation * electrical and electronic properties * chemical vapor deposition * atomic force and scanning tunneling microscopy * microcrystallinity * optical properties Subject RIV: BM - Solid Matter Physics ; Magnet ism Impact factor: 1.362, year: 2006

  3. Carrier dynamics in microcrystalline silicon studied by time-resolved terahertz spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Fekete, Ladislav; Němec, Hynek; Kadlec, Filip; Kužel, Petr; Stuchlík, Jiří; Fejfar, Antonín; Kočka, Jan

    2006-01-01

    Roč. 352, - (2006), s. 2846-2849 ISSN 0022-3093 R&D Projects: GA AV ČR(CZ) KJB100100512 Institutional research plan: CEZ:AV0Z10100520 Keywords : silicon * solar cells * dielectric properties * relaxation * electric modulus * chemical vapor deposition * microcrystallinity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.362, year: 2006

  4. Steady-state solution growth of microcrystalline silicon on nanocrystalline seed layers on glass

    Science.gov (United States)

    Bansen, R.; Ehlers, C.; Teubner, Th.; Boeck, T.

    2016-09-01

    The growth of polycrystalline silicon layers on glass from tin solutions at low temperatures is presented. This approach is based on the steady-state solution growth of Si crystallites on nanocrystalline seed layers, which are prepared in a preceding process step. Scanning electron microscopy and atomic force microscopy investigations reveal details about the seed layer surfaces, which consist of small hillocks, as well as about Sn inclusions and gaps along the glass substrate after solution growth. The successful growth of continuous microcrystalline Si layers with grain sizes up to several ten micrometers shows the feasibility of the process and makes it interesting for photovoltaics. Project supported by the German Research Foundation (DFG) (No. BO 1129/5-1).

  5. Physical and mechanical properties of microcrystalline cellulose prepared from local agricultural residues

    International Nuclear Information System (INIS)

    El-Sakhawy, M.M.; Hassan, M.L.

    2005-01-01

    Microcrystalline cellulose (MCC) was prepared from local agricultural residues, namely, bagasse, rice straw, and cotton stalks bleached pulps. Hydrolysis of bleached pulps was carried out using hydrochloric or sulfuric acid to study the effect of the acid used on the properties of produced microcrystalline cellulose such as degree of polymerization (DP), crystallinity index (CrI), crystallite size, bulk density, particle size, and thermal stability. The mechanical properties of tablets made from microcrystalline cellulose of the different agricultural residues were tested and compared to commercial grade MCC. The use of rice straw pulp in different proportions as a source of silica to prepare silicified microcrystalline cellulose (SMCC) was carried out. The effect of the percent of silica on the mechanical properties of tablets before and after wet granulation was tested

  6. Physical and mechanical properties of microcrystalline cellulose prepared from local agricultural residues

    Energy Technology Data Exchange (ETDEWEB)

    El-Sakhawy, M M; Hassan, M L [Cellulose and Paper Dept., National Research Center, Dokki, Cairo (Egypt)

    2005-07-01

    Microcrystalline cellulose (MCC) was prepared from local agricultural residues, namely, bagasse, rice straw, and cotton stalks bleached pulps. Hydrolysis of bleached pulps was carried out using hydrochloric or sulfuric acid to study the effect of the acid used on the properties of produced microcrystalline cellulose such as degree of polymerization (DP), crystallinity index (CrI), crystallite size, bulk density, particle size, and thermal stability. The mechanical properties of tablets made from microcrystalline cellulose of the different agricultural residues were tested and compared to commercial grade MCC. The use of rice straw pulp in different proportions as a source of silica to prepare silicified microcrystalline cellulose (SMCC) was carried out. The effect of the percent of silica on the mechanical properties of tablets before and after wet granulation was tested.

  7. Extraction of the defect density of states in microcrystalline silicon from experimental results and simulation studies

    International Nuclear Information System (INIS)

    Tibermacine, T.; Ledra, M.; Ouhabab, N.; Merazga, A.

    2015-01-01

    The constant photocurrent method in the ac-mode (ac-CPM) is used to determine the defect density of states (DOS) in hydrogenated microcrystalline silicon (μc-Si:H) prepared by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD). The absorption coefficient spectrum (ac-α(hv)), is measured under ac-CPM conditions at 60 Hz. The measured ac-α(hv) is converted by the CPM spectroscopy into a DOS distribution covering a portion in the lower energy range of occupied states. We have found that the density of valence band-tail states falls exponentially towards the gap with a typical band-tail width of 63 meV. Independently, computer simulations of the ac-CPM are developed using a DOS model that is consistent with the measured ac-α(hv) in the present work and a previously measured transient photocurrent (TPC) for the same material. The DOS distribution model suggested by the measurements in the lower and in the upper part of the energy-gap, as well as by the numerical modelling in the middle part of the energy-gap, coincide reasonably well with the real DOS distribution in hydrogenated microcrystalline silicon because the computed ac-α(hv) is found to agree satisfactorily with the measured ac-α(hv). (paper)

  8. Simulation of the growth dynamics of amorphous and microcrystalline silicon

    OpenAIRE

    Bailat, Julien; Vallat-Sauvain, Evelyne; Vallat, A.; Shah, Arvind

    2008-01-01

    The qualitative description of the major microstructure characteristics of microcrystalline silicon is achieved through a three-dimensional discrete dynamical growth model. The model is based on three fundamental processes that determine surface morphology: (1) random deposition of particles, (2) local relaxation and (3) desorption. In this model, the incoming particle reaching the growing surface takes on a state variable representing a particular way of being incorporated into the material....

  9. Conventional and 360 degree electron tomography of a micro-crystalline silicon solar cell

    DEFF Research Database (Denmark)

    Duchamp, Martial; Ramar, Amuthan; Kovács, András

    2011-01-01

    Bright-field (BF) and annular dark-field (ADF) electron tomography in the transmission electron microscope (TEM) are used to characterize elongated porous regions or cracks (simply referred to as cracks thereafter) in micro-crystalline silicon (μc-Si:H) solar cell. The limitations of inferring...

  10. Sub-bandgap optical absorption spectroscopy of hydrogenated microcrystalline silicon thin films prepared using hot-wire CVD (Cat-CVD) process

    International Nuclear Information System (INIS)

    Goktas, O.; Isik, N.; Okur, S.; Gunes, M.; Carius, R.; Klomfass, J.; Finger, F.

    2006-01-01

    Hydrogenated microcrystalline silicon (μc-Si:H) thin films with different silane concentration (SC) have been prepared using the HW-CVD technique. Dual beam photoconductivity (DBP), photothermal deflection spectroscopy (PDS), and transmission measurements have been used to investigate the optical properties of the μc-Si:H films. Two different sub-bandgap absorption, α(hν), methods have been applied and analyzed to obtain a better insight into the electronic states involved. A good agreement has been obtained in the absorption spectrum obtained from the PDS and DBP measurements at energies above the bandgap. Differences between PDS and DBP spectra exist below the bandgap energy where DBP spectra always give lower α(hν) values and show a dependence on the SC. For some films, differences exist in the α(hν) spectra when the DBP measurements are carried out through the film and substrate side. In addition, for some films, there remains fringe pattern left on the spectrum after the calculation of the fringe-free absorption spectrum, which indicates structural inhomogeneities present throughout the film

  11. Amorphous and microcrystalline silicon applied in very thin tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schicho, Sandra

    2011-07-28

    Thin-film solar cells are fabricated by low-cost production processes, and are therefore an alternative to conventionally used wafer solar cells based on crystalline silicon. Due to the different band gaps, tandem cells that consist of amorphous (a-Si:H) and microcrystalline ({mu}c-Si:H) single junction solar cells deposited on top of each other use the solar spectrum much more efficient than single junction solar cells. The silicon layers are usually deposited on TCO (Transparent Conductive Oxide)-coated glass and metal- or plastic foils. Compared to the CdTe and CIGS based thin-film technologies, silicon thin-film solar cells have the advantage that no limitation of raw material supply is expected and no toxic elements are used. Nevertheless, the production cost per Wattpeak is the decisive factor concerning competitiveness and can be reduced by, e.g., shorter deposition times or reduced material consumption. Both cost-reducing conceptions are simultaneously achieved by reducing the a-Si:H and {mu}c-Si:H absorber layer thicknesses in a tandem device. In the work on hand, the influence of an absorber layer thickness reduction up to 77% on the photovoltaic parameters of a-Si:H/{mu}c-Si:H tandem solar cells was investigated. An industry-oriented Radio Frequency Plasma-Enhanced Chemical Vapour Deposition (RF-PECVD) system was used to deposit the solar cells on glass substrates coated with randomly structured TCO layers. The thicknesses of top and bottom cell absorber layers were varied by adjusting the deposition time. Reduced layer thicknesses lead to lower absorption and, hence, to reduced short-circuit current densities which, however, are partially balanced by higher open-circuit voltages and fill factors. Furthermore, by using very thin amorphous top cells, the light-induced degradation decreases tremendously. Accordingly, a thickness reduction of 75% led to an efficiency loss of only 21 %. By adjusting the parameters for the deposition of a-Si:H top cells, a

  12. Microcrystalline bottom cells in large area thin film silicon MICROMORPH™ solar modules

    Czech Academy of Sciences Publication Activity Database

    Hoetzel, J.E.; Caglar, O.; Cashmore, J.S.; Goury, C.; Kalaš, J.; Klindworth, M.; Kupich, M.; Leu, G.F.; Lindic, M.H.; Losio, P.A.; Mates, Tomáš; Mereu, B.; Roschek, T.; Sinicco, I.

    2016-01-01

    Roč. 157, Dec (2016), s. 178-189 ISSN 0927-0248 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * material quality * PECVD * Raman crystallinity * grading * micromorph Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 4.784, year: 2016

  13. Process control of high rate microcrystalline silicon based solar cell deposition by optical emission spectroscopy

    International Nuclear Information System (INIS)

    Kilper, T.; Donker, M.N. van den; Carius, R.; Rech, B.; Braeuer, G.; Repmann, T.

    2008-01-01

    Silicon thin-film solar cells based on microcrystalline silicon (μc-Si:H) were prepared in a 30 x 30 cm 2 plasma-enhanced chemical vapor deposition reactor using 13.56 or 40.68 MHz plasma excitation frequency. Plasma emission was recorded by optical emission spectroscopy during μc-Si:H absorber layer deposition at deposition rates between 0.5 and 2.5 nm/s. The time course of SiH * and H β emission indicated strong drifts in the process conditions particularly at low total gas flows. By actively controlling the SiH 4 gas flow, the observed process drifts were successfully suppressed resulting in a more homogeneous i-layer crystallinity along the growth direction. In a deposition regime with efficient usage of the process gas, the μc-Si:H solar cell efficiency was enhanced from 7.9 % up to 8.8 % by applying process control

  14. Raman mapping of microcrystalline silicon thin films with high spatial resolution

    Czech Academy of Sciences Publication Activity Database

    Ledinský, Martin; Vetushka, Aliaksi; Stuchlík, Jiří; Fejfar, Antonín; Kočka, Jan

    2010-01-01

    Roč. 7, 3-4 (2010), s. 704-707 ISSN 1862-6351 R&D Projects: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510; GA AV ČR(CZ) IAA100100902 Institutional research plan: CEZ:AV0Z10100521 Keywords : Raman * atomic force microscopy * microcrystalline silicon Subject RIV: BM - Solid Matter Physics ; Magnetism http://www3.interscience.wiley.com/journal/123277609/abstract

  15. The open-circuit voltage in microcrystalline silicon solar cells of different degrees of crystallinity

    International Nuclear Information System (INIS)

    Nath, Madhumita; Roca i Cabarrocas, P.; Johnson, E.V.; Abramov, A.; Chatterjee, P.

    2008-01-01

    We have used a detailed electrical-optical computer model (ASDMP) in conjunction with the experimental characterization of microcrystalline silicon thin-film solar cells of different degrees of crystallinity (but having identical P- and N-layers) to understand the observed decrease of the open-circuit voltage with increasing crystalline fraction. In order to model all aspects of the experimental current density-voltage and quantum efficiency characteristics of cells having low (∼ 75%) and high (over 90%) crystalline fraction, we had to assume both a higher mobility gap defect density and a lower band gap for the more crystallized material. The former fact is widely known to bring down the open-circuit voltage. Our calculations also reveal that the proximity of the quasi-Fermi levels to the energy bands in the cell based on highly crystallized (and assumed to have a lower band gap) microcrystalline silicon results in higher free and trapped carrier densities in this device. The trapped hole population is particularly high at and close to the P/I interface on account of the higher inherent defect density in this region and the fact that the hole quasi-Fermi level is close to the valence band edge here. This fact results in a strong interface field, a collapse of the field in the volume, and hence a lower open-circuit voltage. Thus a combination of higher mobility gap defects and a lower band gap is probably the reason for the lower open-circuit voltage in cells based on highly crystallized microcrystalline silicon

  16. Application of scanning Kelvin probe microscopy for the electrical characterization of microcrystalline silicon for photovoltaics

    International Nuclear Information System (INIS)

    Breymesser, A.

    2000-05-01

    In the last years microcrystalline silicon thin films have attracted great attention as a new photovoltaic material. With this material it is possible to combine simple and cheap low temperature deposition techniques known from amorphous silicon with the long-term stability of the photovoltaic performance like in bulk crystalline silicon solar cells. The critical point is the deposition procedure with numerous tunable parameters influencing the quality and character of the produced diode structures. Additionally there is a great uncertainty about unintentionally incorporated defects, which is not affected by the deposition parameters. Extended investigation of the material, diode and solar cell characteristics is essential in order to correlate the impact of deposition conditions with the quality of the devices. The situation is complicated due to the anisotropic and inhomogeneous character of microcrystalline silicon. Scanning Kelvin probe microscopy (SKPM) is a work function measurement method based on a scanning force microscope (SFM) and a modified Kelvin probe technique. Due to the excellent lateral resolution of the SFM work function measurements with resolutions far below the micrometer level can be carried out. Applied on doped microcrystalline silicon structures it is possible to visualize the position of the Fermi level within the band gap and the influence of the deposition conditions on it. Within this work a SKPM based on a commercially available SFM was constructed and built. Great effort was concentrated on the characterization of the SKPM experiment. On the basis of an extended knowledge about the performance investigations concentrated on cross sections of microcrystalline silicon diode structures produced by hot-wire chemical vapor deposition (HW-CVD). A pin structure for the diodes was chosen due to the low diffusion lengths within this rather defective material. The evolution of the built-in electric drift field within the intrinsic absorber is

  17. Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers

    Directory of Open Access Journals (Sweden)

    Goyal Prabal

    2016-01-01

    Full Text Available The use of hexamethyldisiloxane (HMDSO as an oxygen source for the growth of p-type silicon-based layers deposited by Plasma Enhanced Chemical Vapor Deposition is evaluated. The use of this source led to the incorporation of almost equivalent amounts of oxygen and carbon, resulting in microcrystalline silicon oxycarbide thin films. The layers were examined with characterisation techniques including Spectroscopic Ellipsometry, Dark Conductivity, Fourier Transform Infrared Spectroscopy, Secondary Ion Mass Spectrometry and Transmission Electron Microscopy to check material composition and structure. Materials studies show that the refractive indices of the layers can be tuned over the range from 2.5 to 3.85 (measured at 600 nm and in-plane dark conductivities over the range from 10-8 S/cm to 1 S/cm, suggesting that these doped layers are suitable for solar cell applications. The p-type layers were tested in single junction amorphous silicon p-i-n type solar cells.

  18. On the oxidation mechanism of microcrystalline silicon thin films studied by Fourier transform infrared spectroscopy

    NARCIS (Netherlands)

    Bronneberg, A. C.; Smets, A. H. M.; Creatore, M.; M. C. M. van de Sanden,

    2011-01-01

    Insight into the oxidation mechanism of microcrystalline silicon thin films has been obtained by means of Fourier transform infrared spectroscopy. The films were deposited by using the expanding thermal plasma and their oxidation upon air exposure was followed in time. Transmission spectra were

  19. Optical and electronic properties of microcrystalline silicon as a function of microcrystallinity

    International Nuclear Information System (INIS)

    Han, Daxing; Yue, Guozhen; Lorentzen, J. D.; Lin, Jing; Habuchi, H.; Wang, Qi

    2000-01-01

    Films were prepared by hot wire chemical vapor deposition at ∼240 degree sign C with varied hydrogen dilution ratios R=H 2 :SiH 4 from 1 to 20. The optical and electronic properties as a function of microcrystallinity were studied. We found: (a) At low H dilution R≤2, there is no measurable crystallinity by Raman spectroscopy and x-ray diffraction in the a-Si:H matrix, but an optical absorption peak at ∼1.25 eV appears; when R=2, the film shows the lowest subgap absorption, the highest photosensitivity, and the largest optical gap. (b) When R≥3, the c-Si phase is measurable by Raman and a low-energy photoluminescence (PL) band (0.84-1.0 eV) appears in addition to the high-energy band (1.3-1.4 eV). Meanwhile, all the absorption spectra show a featureless line shape. (c) An energy redshift is observed for both PL peaks as the film grows thicker. Finally, (d) the conductivity activation energy first decreases from 0.68 to 0.12 eV, then increases with increasing microcrystallinity. A mode of two sets of energy bands of electronic states for these two-phase materials is suggested. (c) 2000 American Institute of Physics

  20. Solution growth of microcrystalline silicon on amorphous substrates

    Energy Technology Data Exchange (ETDEWEB)

    Heimburger, Robert

    2010-07-05

    This work deals with low-temperature solution growth of micro-crystalline silicon on glass. The task is motivated by the application in low-cost solar cells. As glass is an amorphous material, conventional epitaxy is not applicable. Therefore, growth is conducted in a two-step process. The first step aims at the spatial arrangement of silicon seed crystals on conductive coated glass substrates, which is realized by means of vapor-liquid-solid processing using indium as the solvent. Seed crystals are afterwards enlarged by applying a specially developed steady-state solution growth apparatus. This laboratory prototype mainly consists of a vertical stack of a silicon feeding source and the solvent (indium). The growth substrate can be dipped into the solution from the top. The system can be heated to a temperature below the softening point of the utilized glass substrate. A temperature gradient between feeding source and growth substrate promotes both, supersaturation and material transport by solvent convection. This setup offers advantages over conventional liquid phase epitaxy at low temperatures in terms of achievable layer thickness and required growth times. The need for convective solute transport to gain the desired thickness of at least 50 {mu}m is emphasized by equilibrium calculations in the binary system indium-silicon. Material transport and supersaturation conditions inside the utilized solution growth crucible are analyzed. It results that the solute can be transported from the lower feeding source to the growth substrate by applying an appropriate heating regime. These findings are interpreted by means of a hydrodynamic analysis of fluid flow and supporting FEM simulation. To ensure thermodynamic stability of all materials involved during steady-state solution growth, the ternary phase equilibrium between molybdenum, indium and silicon at 600 C was considered. Based on the obtained results, the use of molybdenum disilicide as conductive coating

  1. Characterization of microcrystalline I-layer for solar cells prepared in low temperature - plastic compatible process

    KAUST Repository

    Sliz, Rafal; Ahnood, Arman; Nathan, Arokia; Myllyla, Risto; Jabbour, Ghassan E.

    2012-01-01

    Microcrystalline silicon (mc-Si) lms deposited using a Plasma Enhanced Chemical Vapour Deposition (PECVD) process constitute an important material for manufacturing low-cost, large-area thin-lm devices, such as solar cells or thin-lm transistors

  2. Solar cell of 6.3% efficiency employing high deposition rate (8 nm/s) microcrystalline silicon photovoltaic layer

    Energy Technology Data Exchange (ETDEWEB)

    Sobajima, Yasushi; Nishino, Mitsutoshi; Fukumori, Taiga; Kurihara, Masanori; Higuchi, Takuya; Nakano, Shinya; Toyama, Toshihiko; Okamoto, Hiroaki [Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Machikaneyama-cho 1-3, Osaka 560-8531 (Japan)

    2009-06-15

    Microcrystalline silicon ({mu}c-Si) films deposited at high growth rates up to 8.1 nm/s prepared by very-high-frequency-plasma-enhanced chemical vapor deposition (VHF-PECVD) at 18-24 Torr have been investigated. The relation between the deposition rates and input power revealed the depletion of silane. Under high-pressure deposition (HPD) conditions, the structural properties were improved. Furthermore, applying {mu}c-Si to n-i-p solar cells, short-circuit current density (J{sub SC}) was increased in accordance with the improvement of microstructure of i-layer. As a result, a conversion efficiency of 6.30% has been achieved employing the i-layer deposited at 8.1 nm/s under the HPD conditions. (author)

  3. Substrate temperature dependence of microcrystallinity in plasma-deposited, boron-doped hydrogenated silicon alloys

    International Nuclear Information System (INIS)

    Rajeswaran, G.; Kampas, F.J.; Vanier, P.E.; Sabatini, R.L.; Tafto, J.

    1983-01-01

    The glow-discharge decomposition of silane diluted in hydrogen using diborane as a dopant results in the deposition of p-type microcrystalline silicon films at relatively low temperatures. The conductivity of these films is critically dependent on the substrate temperature when the ratio of silane flow rate to total gas flow rate is 1%. Electron micrographs show that highly conducting films contain numerous clusters of 2.5-nm crystallites that are embedded in an amorphous medium

  4. Microcrystalline silicon films and solar cells investigatet by photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Merdzhanova, T.

    2005-07-01

    A systematic investigation on photoluminescence (PL) properties of microcrystalline silicon ({mu}c-Si:H) films with structural composition changing from highly crystalline to predominantly amorphous is presented. The samples were prepared by PECVD and HWCVD with different silane concentration in hydrogen (SC). By using photoluminescence in combination with Raman spectroscopy the relationship between electronic properties and the microstructure of the material is studied. The PL spectra of {mu}c-Si:H reveal a rather broad ({proportional_to}0.13 eV) featureless band at about 1 eV ('{mu}c'-Si-band). In mixed phase material of crystalline and amorphous regions, a band at about 1.3 eV with halfwidth of about 0.3 eV is found in addition to '{mu}c'-Si-band, which is attributed to the amorphous phase ('a'-Si-band). Similarly to amorphous silicon, the '{mu}c'-Si-band is assigned to recombination between electrons and holes in band tail states. An additional PL band centred at about 0.7 eV with halfwidth slightly broader than the '{mu}c'-Si-band is observed only for films prepared at high substrate temperature and it is preliminarily assigned to defect-related transitions as in polycrystalline silicon. With decreasing crystalline volume fraction, the '{mu}c'-Si-band shifts continuously to higher energies for all {mu}c-Si:H films but the linewidth of the PL spectra is almost unaffected. This is valid for all deposition conditions investigated. The results are interpreted, assuming decrease of the density of band tail states with decreasing crystalline volume fraction. A simple model is proposed to simulate PL spectra and V{sub oc} in {mu}c-Si:H solar cells as a function of temperature, based on carrier distributions in quasi-equilibrium conditions. In the model is assumed symmetric density of states distributions for electrons and holes in the conduction and the valence band tail states. The best agreement between

  5. Preparation and Characterization of Microcrystalline Cellulose (MCC from Kenaf and Cotton Stem

    Directory of Open Access Journals (Sweden)

    Farshad Mirehki

    2013-11-01

    Full Text Available Cellulose, microcrystalline cellulose (MCC and nanofiber cellulose are the ones of materials which are being used recently as biodegradable filler and reinforcing agent for making composites. In this research, microcrystalline cellulose were prepared from kenaf and cotton bast by hydrochloric acid hydrolysis. The effects of hydrolysis condition on amount of crystallinity and crystal size of MCC were investigated by infrared spectroscopy (FT-IR, X-ray diffraction (XRD and scanning electron microscopy (SEM. Results have shown that in both samples increasing the acid ratio increased the crystallinity; however, the size of crystals did not change. SEM results have shown that after hydrolysis the size of sample particles was micro.

  6. Top-gate microcrystalline silicon TFTs processed at low temperature (<200 deg. C)

    International Nuclear Information System (INIS)

    Saboundji, A.; Coulon, N.; Gorin, A.; Lhermite, H.; Mohammed-Brahim, T.; Fonrodona, M.; Bertomeu, J.; Andreu, J.

    2005-01-01

    N-type as well P-type top-gate microcrystalline silicon thin film transistors (TFTs) are fabricated on glass substrates at a maximum temperature of 200 deg. C. The active layer is an undoped μc-Si film, 200 nm thick, deposited by Hot-Wire Chemical Vapor. The drain and source regions are highly phosphorus (N-type TFTs) or boron (P-type TFTs)-doped μc-films deposited by HW-CVD. The gate insulator is a silicon dioxide film deposited by RF sputtering. Al-SiO 2 -N type c-Si structures using this insulator present low flat-band voltage,-0.2 V, and low density of states at the interface D it =6.4x10 10 eV -1 cm -2 . High field effect mobility, 25 cm 2 /V s for electrons and 1.1 cm 2 /V s for holes, is obtained. These values are very high, particularly the hole mobility that was never reached previously

  7. Microcrystalline silicon deposition: Process stability and process control

    International Nuclear Information System (INIS)

    Donker, M.N. van den; Kilper, T.; Grunsky, D.; Rech, B.; Houben, L.; Kessels, W.M.M.; Sanden, M.C.M. van de

    2007-01-01

    Applying in situ process diagnostics, we identified several process drifts occurring in the parallel plate plasma deposition of microcrystalline silicon (μc-Si:H). These process drifts are powder formation (visible from diminishing dc-bias and changing spatial emission profile on a time scale of 10 0 s), transient SiH 4 depletion (visible from a decreasing SiH emission intensity on a time scale of 10 2 s), plasma heating (visible from an increasing substrate temperature on a time scale of 10 3 s) and a still puzzling long-term drift (visible from a decreasing SiH emission intensity on a time scale of 10 4 s). The effect of these drifts on the crystalline volume fraction in the deposited films is investigated by selected area electron diffraction and depth-profiled Raman spectroscopy. An example shows how the transient depletion and long-term drift can be prevented by suitable process control. Solar cells deposited using this process control show enhanced performance. Options for process control of plasma heating and powder formation are discussed

  8. High efficiency high rate microcrystalline silicon thin-film solar cells deposited at plasma excitation frequencies larger than 100 MHz

    Czech Academy of Sciences Publication Activity Database

    Strobel, C.; Leszczynska, B.; Merkel, U.; Kuske, J.; Fischer, D.D.; Albert, M.; Holovský, Jakub; Michard, S.

    2015-01-01

    Roč. 143, Dec (2015), 347-353 ISSN 0927-0248 R&D Projects: GA MŠk 7E12029 EU Projects: European Commission(XE) 283501 - Fast Track Institutional support: RVO:68378271 Keywords : VHF * PECVD * microcrystalline silicon * solar cell * high rate * high efficiency Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.732, year: 2015

  9. Compaction mechanism and tablet strength of unlubricated and lubricated (silicified) microcrystalline cellulose

    NARCIS (Netherlands)

    van Veen, B; Bolhuis, G K; Wu, Y S; Zuurman, K; Frijlink, H W

    This paper describes the differences in compaction properties between microcrystalline cellulose (MCC) and microcrystalline cellulose co-processed with colloidal silicon dioxide (SMCC). The different compaction parameters are not only compared for the pure materials, but also for the lubricated

  10. Low power high growth rate deposition of microcrystalline silicon

    OpenAIRE

    Feltrin, A; Bugnon, G; Meillaud, F; Bailat, J; Ballif, C

    2008-01-01

    Microcrystalline growth regimes and solar cells obtained in different pressure and silane depletion conditions are studied in a large area KAI-S plasma reactor. The microcrystalline material quality is systematically investigated by Fourier Transform Photocurrent Spectroscopy (FTPS) to evaluate the defect density. It is shown that higher pressure and silane depletion positively affect the material quality. A clear correlation between FTPS measurements and cell efficiency is established, showi...

  11. Local photoconductivity of microcrystalline silicon thin films measured by conductive atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ledinsky, Martin; Fejfar, Antonin; Vetushka, Aliaksei; Stuchlik, Jiri; Rezek, Bohuslav; Kocka, Jan [Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i. Cukrovarnicka 10, 162 00 Praha 6 (Czech Republic)

    2011-11-15

    Local currents measured under standard conductive atomic force microscopy (C-AFM) conditions on microcrystalline silicon ({mu}c-Si:H) thin films were studied. It was shown that the AFM detection diode illuminating the AFM cantilever (see the figure on the right side) 100 x enhanced the current flows through the photosensitive {mu}c-Si:H layer. The local current map and current-voltage characteristics were measured under dark conditions. This study enables mapping of both the dark current and photocurrent. C-AFM cantilever illuminated by the detection diode during measurement on {mu}c-Si:H thin film. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. A new view of microcrystalline silicon: The role of plasma processing in achieving a dense and stable absorber material for photovoltaic applicationsv

    Czech Academy of Sciences Publication Activity Database

    Bugnon, G.; Parascandolo, G.; Söderström, T.; Cuony, P.; Despeisse, M.; Hänni, S.; Holovský, Jakub; Meillaud, F.; Ballif, C.

    2012-01-01

    Roč. 22, č. 17 (2012), s. 3665-3671 ISSN 1616-301X Institutional research plan: CEZ:AV0Z10100521 Keywords : solar cell * microcrystalline silicon * nanoporous Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 9.765, year: 2012 http://onlinelibrary.wiley.com/doi/10.1002/adfm.201200299/pdf

  13. Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.

    Science.gov (United States)

    Köhler, Malte; Pomaska, Manuel; Lentz, Florian; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

    2018-05-02

    Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO 2 ) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO 2 /c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO 2 , in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO 2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm 2 were achieved using μc-SiC:H(n)/SiO 2 /c-Si as transparent passivated contacts.

  14. Microcrystalline silicon oxides for silicon-based solar cells: impact of the O/Si ratio on the electronic structure

    Science.gov (United States)

    Bär, M.; Starr, D. E.; Lambertz, A.; Holländer, B.; Alsmeier, J.-H.; Weinhardt, L.; Blum, M.; Gorgoi, M.; Yang, W.; Wilks, R. G.; Heske, C.

    2014-10-01

    Hydrogenated microcrystalline silicon oxide (μc-SiOx:H) layers are one alternative approach to ensure sufficient interlayer charge transport while maintaining high transparency and good passivation in Si-based solar cells. We have used a combination of complementary x-ray and electron spectroscopies to study the chemical and electronic structure of the (μc-SiOx:H) material system. With these techniques, we monitor the transition from a purely Si-based crystalline bonding network to a silicon oxide dominated environment, coinciding with a significant decrease of the material's conductivity. Most Si-based solar cell structures contain emitter/contact/passivation layers. Ideally, these layers fulfill their desired task (i.e., induce a sufficiently high internal electric field, ensure a good electric contact, and passivate the interfaces of the absorber) without absorbing light. Usually this leads to a trade-off in which a higher transparency can only be realized at the expense of the layer's ability to properly fulfill its task. One alternative approach is to use hydrogenated microcrystalline silicon oxide (μc-SiOx:H), a mixture of microcrystalline silicon and amorphous silicon (sub)oxide. The crystalline Si regions allow charge transport, while the oxide matrix maintains a high transparency. To date, it is still unclear how in detail the oxygen content influences the electronic structure of the μc-SiOx:H mixed phase material. To address this question, we have studied the chemical and electronic structure of the μc-SiOx:H (0 0.5, we observe a pronounced decrease of Si 3s - Si 3p hybridization in favor of Si 3p - O 2p hybridization in the upper valence band. This coincides with a significant increase of the material's resistivity, possibly indicating the breakdown of the conducting crystalline Si network. Silicon oxide layers with a thickness of several hundred nanometres were deposited in a PECVD (plasma-enhanced chemical vapor deposition) multi chamber system

  15. Increasing the deposition rate of microcrystalline and amorphous silicon thin films for photovoltaic applications - Phase IV: 1997-1999

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-07-01

    This report on behalf of the Swiss Federal Office of Energy (SFOE) describes Phase IV of the project to test the feasibility and usefulness of Very High Frequency (VHF) plasma operation in large-area reactors suitable for the production of solar cell panels using thinly-deposited micro-crystalline silicon films. The report discusses the results of fast-deposition tests and trials using high-current DC arcs and VHF techniques to obtain deposition rates and film quality suitable for industrial processes for the production of thin-film solar cell panels. The effects of alternative plasma chemistry were also studied by adding silicon tetrafluoride to the standard silane/hydrogen mixtures. The report is concluded with calculations for optimum radio-frequency (RF) contact configuration for large area reactors with 1 m{sup 2} electrodes.

  16. The relationship between I{sub H{sub {alpha}}} /(I{sub SiH}{sup *}){sup 2} and crystalline volume fraction in microcrystalline silicon growth

    Energy Technology Data Exchange (ETDEWEB)

    Chantana, Jakapan; Higuchi, Takuya; Nagai, Tomoyuki; Sasaki, Shota; Sobajima, Yasushi; Toyama, Toshihiko; Sada, Chitose; Matsuda, Akihisa; Okamoto, Hiroaki [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan)

    2010-03-15

    Optical-emission-intensity ratio of I{sub H{sub {alpha}}} /(I{sub SiH}{sup *}) during film growth has been used as a simple indicator to predict crystallinity (crystal-volume fraction: X{sub C}) in the resulting microcrystalline silicon ({mu}c-Si:H) thin films. The relationship between I{sub H{sub {alpha}}} /(I{sub SiH}{sup *}) and X{sub C} has been checked under a wide variety of film-preparation conditions including low-deposition-rate (<0.1 nm/s) and high-deposition-rate (>5 nm/s) cases. On the basis of theoretical consideration, we have proposed optical-emission-intensity ratio of I{sub H{sub {alpha}}} /(I{sub SiH}{sup *}) {sup 2} as a new indicator of X{sub C} during film growth of {mu}c-Si:H. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  17. Impact of microcrystalline silicon carbide growth using hot-wire chemical vapor deposition on crystalline silicon surface passivation

    International Nuclear Information System (INIS)

    Pomaska, M.; Beyer, W.; Neumann, E.; Finger, F.; Ding, K.

    2015-01-01

    Highly crystalline microcrystalline silicon carbide (μc-SiC:H) with excellent optoelectronic material properties is a promising candidate as highly transparent doped layer in silicon heterojunction (SHJ) solar cells. These high quality materials are usually produced using hot wire chemical vapor deposition under aggressive growth conditions giving rise to the removal of the underlying passivation layer and thus the deterioration of the crystalline silicon (c-Si) surface passivation. In this work, we introduced the n-type μc-SiC:H/n-type μc-SiO x :H/intrinsic a-SiO x :H stack as a front layer configuration for p-type SHJ solar cells with the μc-SiO x :H layer acting as an etch-resistant layer against the reactive deposition conditions during the μc-SiC:H growth. We observed that the unfavorable expansion of micro-voids at the c-Si interface due to the in-diffusion of hydrogen atoms through the layer stack might be responsible for the deterioration of surface passivation. Excellent lifetime values were achieved under deposition conditions which are needed to grow high quality μc-SiC:H layers for SHJ solar cells. - Highlights: • High surface passivation quality was preserved after μc-SiC:H deposition. • μc-SiC:H/μc-SiO x :H/a-SiO x :H stack a promising front layer configuration • Void expansion at a-SiO x :H/c-Si interface for deteriorated surface passivation • μc-SiC:H provides a high transparency and electrical conductivity.

  18. Method for depositing high-quality microcrystalline semiconductor materials

    Science.gov (United States)

    Guha, Subhendu [Bloomfield Hills, MI; Yang, Chi C [Troy, MI; Yan, Baojie [Rochester Hills, MI

    2011-03-08

    A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

  19. Piezoelectric photothermal study of the optical properties of microcrystalline silicon near the bandgap

    International Nuclear Information System (INIS)

    Fukuyama, A.; Sakamoto, S.; Sonoda, S.; Wang, P.; Sakai, K.; Ikari, T.

    2006-01-01

    The optical absorption spectra of hydrogenated microcrystalline silicon (μc-Si:H) films deposited on glass and transparent conductive oxide (TCO) covered glass substrates were measured by using the piezoelectric photothermal (PPT) technique. The effects of the deposition rate on the optical absorption of μc-Si:H thin films were investigated from the nonradiative transition point of view. It was found that increasing the deposition rate resulted in a decrease of optical absorption and a shift of effective energy gap to the higher photon energy side. These changes in the optical properties of μc-Si:H cause the decrease of the number of carriers optically generated by absorbing sunlight, and results in a reduction in the photovoltaic conversion efficiency of the solar cells for high deposition rate samples. The usefulness of the PPT method for investigating the optical properties of thin and transparent μc-Si:H films was also demonstrated

  20. Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

    Czech Academy of Sciences Publication Activity Database

    Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

    2016-01-01

    Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

  1. Microstructure and initial growth characteristics of the low temperature microcrystalline silicon films on silicon nitride surface

    International Nuclear Information System (INIS)

    Park, Young-Bae; Rhee, Shi-Woo

    2001-01-01

    Microstructure and initial growth characteristics of the hydrogenated microcrystalline Si (μc-Si:H) films grown on hydrogenated amorphous silicon nitride (a-SiN x :H) surface at low temperature were investigated using high resolution transmission electron microscope and micro-Raman spectroscopy. With increasing the Si and Si - H contents in the SiN x :H surfaces, μc-Si crystallites, a few nanometers in size, were directly grown on amorphous nitride surfaces. It is believed that the crystallites were grown through the nucleation and phase transition from amorphous to crystal in a hydrogen-rich ambient of gas phase and growing surface. The crystallite growth characteristics on the dielectric surface were dependent on the stoichiometric (x=N/Si) ratio corresponding hydrogen bond configuration of the SiN x :H surface. Surface facetting and anisotropic growth of the Si crystallites resulted from the different growth rate on the different lattice planes of Si. No twins and stacking faults were observed in the (111) lattice planes of the Si crystallites surrounding the a-Si matrix. This atomic-scale structure was considered to be the characteristic of the low temperature crystallization of the μc-Si:H by the strain relaxation of crystallites in the a-Si:H matrix. [copyright] 2001 American Institute of Physics

  2. Comparison between periodic and stochastic parabolic light trapping structures for thin-film microcrystalline Silicon solar cells.

    Science.gov (United States)

    Peters, M; Battaglia, C; Forberich, K; Bläsi, B; Sahraei, N; Aberle, A G

    2012-12-31

    Light trapping is of very high importance for silicon photovoltaics (PV) and especially for thin-film silicon solar cells. In this paper we investigate and compare theoretically the light trapping properties of periodic and stochastic structures having similar geometrical features. The theoretical investigations are based on the actual surface geometry of a scattering structure, characterized by an atomic force microscope. This structure is used for light trapping in thin-film microcrystalline silicon solar cells. Very good agreement is found in a first comparison between simulation and experimental results. The geometrical parameters of the stochastic structure are varied and it is found that the light trapping mainly depends on the aspect ratio (length/height). Furthermore, the maximum possible light trapping with this kind of stochastic structure geometry is investigated. In a second step, the stochastic structure is analysed and typical geometrical features are extracted, which are then arranged in a periodic structure. Investigating the light trapping properties of the periodic structure, we find that it performs very similar to the stochastic structure, in agreement with reports in literature. From the obtained results we conclude that a potential advantage of periodic structures for PV applications will very likely not be found in the absorption enhancement in the solar cell material. However, uniformity and higher definition in production of these structures can lead to potential improvements concerning electrical characteristics and parasitic absorption, e.g. in a back reflector.

  3. Development of Amorphous/Microcrystalline Silicon Tandem Thin-Film Solar Modules with Low Output Voltage, High Energy Yield, Low Light-Induced Degradation, and High Damp-Heat Reliability

    Directory of Open Access Journals (Sweden)

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film solar modules with low output voltage, high energy yield, low light-induced degradation, and high damp-heat reliability were successfully designed and developed. Several key technologies of passivation, transparent-conducting-oxide films, and cell and segment laser scribing were researched, developed, and introduced into the production line to enhance the performance of these low-voltage modules. A 900 kWp photovoltaic system with these low-voltage panels was installed and its performance ratio has been simulated and projected to be 92.1%, which is 20% more than the crystalline silicon and CdTe counterparts.

  4. Influence of polyvinylpyrrolidone, microcrystalline cellulose and colloidal silicon dioxide on technological characteristics of a high-dose Petiveria alliacea tablet.

    Science.gov (United States)

    García-Pérez, Martha-Estrella; Lemus-Rodríguez, Zoe; Hung-Arbelo, Mario; Vistel-Vigo, Marlen

    2017-12-01

    Petiveria alliacea L. (Phytolaccaceae) is a perennial shrub used by its immunomodulatory, anticancerogenic and anti-inflammatory properties. This study determined the influence of polyvinylpyrrolidone (PVP), colloidal silicon dioxide (CSD) and microcrystalline cellulose (MC) on the technological characteristic of a high-dose P. alliacea tablet prepared by the wet granulation method. The botanical and pharmacognostic analysis of the plant material was firstly performed, followed by a 2 3 factorial design considering three factors at two levels: (a) the binder (PVP) incorporated in formulation at 10% and 15% (w/w); (b) the compacting agent (CSD) added at 10% and 15% (w/w) and; (c) the diluent (MC) included at 7.33% and 12.46% (w/w). The analysis of pharmaceutical performance and the accelerated and long-term stability of the best prototype were also completed. The binder, compacting agent and the interaction binder/diluent had a significant impact on breaking force of high-dose P. alliacea tablet. The optimum formula was found to contain 15% (w/w) of CSD, 7.33% (w/w) of MC and 10% (w/w) of PVP. At these conditions, the tablet shows a breaking force of 77.96 N, a friability of 0.39%, a total phenol content of 1.30 mg/tablet and a maximum disintegration time of 6 min. The use of adequate amounts of PVP, MC and CSD as per the factorial design allowed the preparation of a tablet suitable for administration, despite the inappropriate flow and compressibility properties of the P. alliacea powder.

  5. Microcrystalline thin-film solar cell deposition on moving substrates using a linear VHF-PECVD reactor and a cross-flow geometry

    International Nuclear Information System (INIS)

    Flikweert, A J; Zimmermann, T; Merdzhanova, T; Weigand, D; Appenzeller, W; Gordijn, A

    2012-01-01

    A concept for high-rate plasma deposition (PECVD) of hydrogenated microcrystalline silicon on moving substrates (dynamic deposition) is developed and evaluated. The chamber allows for substrates up to a size of 40 × 40 cm 2 . The deposition plasma is sustained between linear VHF electrodes (60 MHz) and a moving substrate. Due to the gas flow geometry and the high degree of source gas depletion, from the carrier's point of view the silane concentration varies when passing the electrodes. This is known to lead to different growth conditions which can induce transitions from microcrystalline to amorphous growth. The effect of different silane concentrations is simulated at a standard RF showerhead electrode by intentionally varying the silane concentration during deposition in static mode. This variation may decrease the layer quality of microcrystalline silicon, due to a shift of the crystallinity away from the optimum. However, adapting the input silane concentration, state-of-the-art solar cells are obtained. Microcrystalline cells (ZnO : Al/Ag back contacts) produced by the linear VHF plasma sources show an efficiency of 7.9% and 6.6% for depositions in static and dynamic mode, respectively. (paper)

  6. Cat-CVD-prepared oxygen-rich μc-Si:H for wide-bandgap material

    International Nuclear Information System (INIS)

    Matsumoto, Yasuhiro; Ortega, Mauricio; Peza, Juan-Manuel; Reyes, Mario-Alfredo; Escobosa, Arturo

    2005-01-01

    Microcrystalline phase-involved oxygen-rich a-Si:H (hydrogenated amorphous silicon) films have been obtained using catalytic chemical vapor deposition (Cat-CVD) process. Pure SiH 4 (silane), H 2 (hydrogen), and O 2 (oxygen) gases were introduced in the chamber by maintaining a pressure of 0.1 Torr. A tungsten catalyzer was fixed at temperatures of 1750 and 1950 deg. C for film deposition on glass and crystalline silicon substrates at 200 deg. C. As revealed from X-ray diffraction spectra, the microcrystalline phase appears for oxygen-rich a-Si:H samples deposited at a catalyzer temperature of 1950 deg. C. However, this microcrystalline phase tends to disappear for further oxygen incorporation. The oxygen content in the deposited films was corroborated by FTIR analysis revealing Si-O-Si bonds and typical Si-H bonding structures. The optical bandgap of the sample increases from 2.0 to 2.7 eV with oxygen gas flow and oxygen incorporation to the deposited films. In the present thin film deposition conditions, no strong tungsten filament degradation was observed after a number of sample preparations

  7. Characterization of microcrystalline I-layer for solar cells prepared in low temperature - plastic compatible process

    KAUST Repository

    Sliz, Rafal

    2012-06-01

    Microcrystalline silicon (mc-Si) lms deposited using a Plasma Enhanced Chemical Vapour Deposition (PECVD) process constitute an important material for manufacturing low-cost, large-area thin-lm devices, such as solar cells or thin-lm transistors. Although the deposition of electronic-grade mc-Si using the PECVD process is now well established, the high substrate temperature required (~400°C) does not lend itself to electronic devices with exible form factors fabricated on low-cost plastic substrates. In this study, we rst investigated an intrinsic mc-Si layer deposited at plastic-compatible substrate temperatures (~150°C) by characterising the properties of the lm and then evaluated its applicability to p-i-n solar cells though device characterisation. When the performance of the solar cell was correlated with lm properties, it was found that, although it compared unfavourably with mc-Si deposited at higher temperatures, it remained a very promising option. Nonetheless, further development is required to increase the overall eciency of mc-Si exible solar cells.

  8. Improved electrical and transport characteristics of amorphous silicon by enriching with microcrystalline silicon

    International Nuclear Information System (INIS)

    Mireshghi, A.; Hong, W.S.; Drewery, J.; Jing, T.; Kaplan, S.N.; Lee, H.K.; Perez-Mendez, V.

    1994-04-01

    The authors have deposited n-i-p diodes with microcrystalline intrinsic layers for radiation detection applications. The diodes show interesting electrical characteristics which have not been reported before. From TOF measurement for their best samples, the authors obtained μ e values which are about 3 times larger than their standard a-Si:H. for μτ values approximately a factor of 2 improvement was observed. The N* D values derived from hole-onset measurements show lower ionized dangling bond density than normal a-Si:H material. The authors propose a simple model which can very well explain the experimental results

  9. High-rate synthesis of microcrystalline silicon films using high-density SiH4/H2 microwave plasma

    International Nuclear Information System (INIS)

    Jia, Haijun; Saha, Jhantu K.; Ohse, Naoyuki; Shirai, Hajime

    2007-01-01

    A high electron density (> 10 11 cm -3 ) and low electron temperature (1-2 eV) plasma is produced by using a microwave plasma source utilizing a spoke antenna, and is applied for the high-rate synthesis of high quality microcrystalline silicon (μc-Si) films. A very fast deposition rate of ∼ 65 A/s is achieved at a substrate temperature of 150 deg. C with a high Raman crystallinity and a low defect density of (1-2) x 10 16 cm -3 . Optical emission spectroscopy measurements reveal that emission intensity of SiH and intensity ratio of H α /SiH are good monitors for film deposition rate and film crystallinity, respectively. A high flux of film deposition precursor and atomic hydrogen under a moderate substrate temperature condition is effective for the fast deposition of highly crystallized μc-Si films without creating additional defects as well as for the improvement of film homogeneity

  10. Process of preparing tritiated porous silicon

    Science.gov (United States)

    Tam, Shiu-Wing

    1997-01-01

    A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.

  11. Optical modelling of thin-film silicon solar cells deposited on textured substrates

    International Nuclear Information System (INIS)

    Krc, J.; Zeman, M.; Smole, F.; Topic, M.

    2004-01-01

    Optical modelling is used to investigate effects of light scattering in amorphous silicon and microcrystalline silicon solar cells. The role of enhanced haze parameter and different angular distribution function of scattered light is analyzed. Results of optical simulation show that enhanced haze parameter compared to that of Asahi U-type SnO 2 :F does not improve external quantum efficiency and short-circuit current density of amorphous silicon solar cell significantly, whereas for microcrystalline silicon solar cell the improvement is larger. Angular distribution function affects the external quantum efficiency and the short-circuit current density significantly

  12. Gas-temperature control in VHF- PECVD process for high-rate (>5 nm/s) growth of microcrystalline silicon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sobajima, Yasushi; Higuchi, Takuya; Chantana, Jakapan; Toyama, Toshihiko; Sada, Chitose; Matsuda, Akihisa; Okamoto, Hiroaki [Graduate School of Engineering Science, Osaka University, Toyonaka City (Japan)

    2010-04-15

    Surface-heating phenomenon by the radiation from high density plasma during growth of microcrystalline silicon ({mu}c-Si:H) thin films at high rate (> 5 nm/sec) is one of the crucial issues to be solved for obtaining high quality intrinsic-layer material for solar cells. We have utilized an optical emission spectroscopy (OES) in the plasma to observe the time evolution of gas temperature during film growth as well as the film-growth rate under {mu}c-Si:H deposition conditions at high rate. Gas temperature has been successfully controlled by changing total flow rate of monosilane (SiH{sub 4})/hydrogen (H{sub 2}) gas mixture, leading to a drastic improvement of optoelectronic properties in the resulting {mu}c-Si:H. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

    International Nuclear Information System (INIS)

    Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

    2000-01-01

    In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

  14. Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

    Czech Academy of Sciences Publication Activity Database

    Stuckelberger, J.; Nogay, G.; Wyss, P.; Jeangros, Q.; Allebe, Ch.; Debrot, F.; Niquille, X.; Ledinský, Martin; Fejfar, Antonín; Despeisse, M.; Haug, F.J.; Löper, P.; Ballif, C.

    2016-01-01

    Roč. 158, Dec (2016), s. 2-10 ISSN 0927-0248 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : surface passivation * passivating contact * nanostructure * silicon oxide * nanocrystalline * microcrystalline * poly-silicon * crystallization * Raman * transmission line measurement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.784, year: 2016

  15. Development of Tandem Amorphous/Microcrystalline Silicon Thin-Film Large-Area See-Through Color Solar Panels with Reflective Layer and 4-Step Laser Scribing for Building-Integrated Photovoltaic Applications

    Directory of Open Access Journals (Sweden)

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film large-area see-through color solar modules were successfully designed and developed for building-integrated photovoltaic applications. Novel and key technologies of reflective layers and 4-step laser scribing were researched, developed, and introduced into the production line to produce solar panels with various colors, such as purple, dark blue, light blue, silver, golden, orange, red wine, and coffee. The highest module power is 105 W and the highest visible light transmittance is near 20%.

  16. Evaluation of microcrystalline cellulose modifed from alpha ...

    African Journals Online (AJOL)

    Alpha cellulose was obtained from Costus afer and part of it was modified to microcrystalline cellulose (CAMCC). The physicochemical properties of the microcrystalline cellulose were determined and compared with those of commercial microcrystalline cellulose (Avicel 101). The swelling capacity, hydration capacity, loss ...

  17. Structure and properties of microcrystalline chitosan

    International Nuclear Information System (INIS)

    Pighinelli, Luciano; Guimaraes, Fernando Machado; Paz, Luan Rios; Zanin, Gabrielle Brehm; Kmiec, Marzena; Tedesco, Felipe Melleu; Reis, Victoria Oliva dos; Silva, Matheus Machado; Becker, Cristiane Miotto; Zehetmeyer, Gislene; Rasia, Gisele

    2016-01-01

    Full text: The microcrystalline chitosan is a modified form of chitosan; it has been elaborated from obtaining method of chitosan salts. It is characterized by special properties of the initial chitosan such as biocompatibility, bioactivity, non-toxic, biodegradability [1]. The objective of this study is to develop a different method to obtain the microcrystalline chitosan and the following characterization of the initial chitosan and MCCh. The material was characterized by FTIR, scanning of electron microscopy, SEM, nuclear magnetic resonance, NMR, and x-ray diffraction. The results indicate that the process to obtain MCCh, did not change the structure of the initial chitosan. The MCCh shows the same functional groups of the initial chitosan. The NMR results shows the acetylated and deacetylated groups. The morphology shows a homogeneous structure of surface. The X-ray diffraction shows the reduction of the crystallinity in the MCCh, indicating a bigger amorphous structure of the MCCh. The chitosan and its derivatives are polymers with excellent properties to be used in regenerative medicine because of ensure efficiency in healing process. This polysaccharide has a great potential to develop a new generation of biomaterials that can be used in regenerative medicine and tissue engineering [2]. References: [1]. LI, Q. et al. Applications and properties of chitosan. In: GOOSEN, M. F. A. (Ed.). Applications of chitin and chitosan. Basel: Technomic, 1997. p. 3-29; [2]. Luciano Pighinelli, Magdalena Kucharska, Dariuz Wawro. Preparation of Microcrystalline chitosan: (MCCh0/tricalcium phosphate complex with Hydroxyapatite in sponge and fibre from for hard tissue regeneration. (author)

  18. Structure and properties of microcrystalline chitosan

    Energy Technology Data Exchange (ETDEWEB)

    Pighinelli, Luciano; Guimaraes, Fernando Machado; Paz, Luan Rios; Zanin, Gabrielle Brehm; Kmiec, Marzena; Tedesco, Felipe Melleu; Reis, Victoria Oliva dos; Silva, Matheus Machado, E-mail: lpighinelli@hotmail.com [Universidade Luterana, Sao Paulo, SP (Brazil); Becker, Cristiane Miotto; Zehetmeyer, Gislene; Rasia, Gisele [Centro Universitario SENAI CIMATEC, Salvador, BA (Brazil). Instituto de Engenharia de Materiais Polimericos

    2016-07-01

    Full text: The microcrystalline chitosan is a modified form of chitosan; it has been elaborated from obtaining method of chitosan salts. It is characterized by special properties of the initial chitosan such as biocompatibility, bioactivity, non-toxic, biodegradability [1]. The objective of this study is to develop a different method to obtain the microcrystalline chitosan and the following characterization of the initial chitosan and MCCh. The material was characterized by FTIR, scanning of electron microscopy, SEM, nuclear magnetic resonance, NMR, and x-ray diffraction. The results indicate that the process to obtain MCCh, did not change the structure of the initial chitosan. The MCCh shows the same functional groups of the initial chitosan. The NMR results shows the acetylated and deacetylated groups. The morphology shows a homogeneous structure of surface. The X-ray diffraction shows the reduction of the crystallinity in the MCCh, indicating a bigger amorphous structure of the MCCh. The chitosan and its derivatives are polymers with excellent properties to be used in regenerative medicine because of ensure efficiency in healing process. This polysaccharide has a great potential to develop a new generation of biomaterials that can be used in regenerative medicine and tissue engineering [2]. References: [1]. LI, Q. et al. Applications and properties of chitosan. In: GOOSEN, M. F. A. (Ed.). Applications of chitin and chitosan. Basel: Technomic, 1997. p. 3-29; [2]. Luciano Pighinelli, Magdalena Kucharska, Dariuz Wawro. Preparation of Microcrystalline chitosan: (MCCh0/tricalcium phosphate complex with Hydroxyapatite in sponge and fibre from for hard tissue regeneration. (author)

  19. Thin film silicon photovoltaics: Architectural perspectives and technological issues

    Energy Technology Data Exchange (ETDEWEB)

    Mercaldo, Lucia Vittoria; Addonizio, Maria Luisa; Noce, Marco Della; Veneri, Paola Delli; Scognamiglio, Alessandra; Privato, Carlo [ENEA, Portici Research Center, Piazzale E. Fermi, 80055 Portici (Napoli) (Italy)

    2009-10-15

    Thin film photovoltaics is a particularly attractive technology for building integration. In this paper, we present our analysis on architectural issues and technological developments of thin film silicon photovoltaics. In particular, we focus on our activities related to transparent and conductive oxide (TCO) and thin film amorphous and microcrystalline silicon solar cells. The research on TCO films is mainly dedicated to large-area deposition of zinc oxide (ZnO) by low pressure-metallorganic chemical vapor deposition. ZnO material, with a low sheet resistance (<8 {omega}/sq) and with an excellent transmittance (>82%) in the whole wavelength range of photovoltaic interest, has been obtained. ''Micromorph'' tandem devices, consisting of an amorphous silicon top cell and a microcrystalline silicon bottom cell, are fabricated by using the very high frequency plasma enhanced chemical vapor deposition technique. An initial efficiency of 11.1% (>10% stabilized) has been obtained. (author)

  20. Water-in-oil Pickering emulsions stabilized by stearoylated microcrystalline cellulose.

    Science.gov (United States)

    Pang, Bo; Liu, Huan; Liu, Peiwen; Peng, Xinwen; Zhang, Kai

    2018-03-01

    Hydrophobic particles with static water contact angles larger than 90° are more like to stabilize W/O Pickering emulsions. In particular, high internal phase Pickering emulsions (HIPEs) are of great interest for diverse applications. However, W/O HIPEs have rarely been realized using sustainable biopolymers. Herein, we used stearoylated microcrystalline cellulose (SMCC) to stabilize W/O Pickering emulsions and especially, W/O HIPEs. Moreover, these W/O HIPEs can be further used as platforms for the preparation of porous materials, such as porous foams. Stearoylated microcrystalline cellulose (SMCC) was prepared by modifying MCC with stearoyl chloride under heterogeneous conditions. Using SMCC as emulsifiers, W/O medium and high internal phase Pickering emulsions (MIPEs and HIPEs) with various organic solvents as continuous phases were prepared using one-step and two-step methods, respectively. Polystyrene (PS) foams were prepared after polymerization of oil phase using HIPEs as templates and their oil/water separation capacity were studied. SMCC could efficiently stabilize W/O Pickering emulsions and HIPEs could only be prepared via the two-step method. The internal phase volume fraction of the SMCC-stabilized HIPEs reached as high as 89%. Diverse internal phase volume fractions led to distinct inner structures of foams with closed or open cells. These macroporous polystyrene (PS) foams demonstrated great potential for the effective absorption of organic solvents from underwater. Copyright © 2017 Elsevier Inc. All rights reserved.

  1. Silicon nanoparticles: Preparation, properties, and applications

    International Nuclear Information System (INIS)

    Chang Huan; Sun Shu-Qing

    2014-01-01

    Silicon nanoparticles have attracted great attention in the past decades because of their intriguing physical properties, active surface state, distinctive photoluminescence and biocompatibility. In this review, we present some of the recent progress in preparation methodologies and surface functionalization approaches of silicon nanoparticles. Further, their promising applications in the fields of energy and electronic engineering are introduced. (invited review — international conference on nanoscience and technology, china 2013)

  2. FTIR spectroscopy and X-ray powder diffraction characterization of microcrystalline cellulose obtained from alfa fibers

    Directory of Open Access Journals (Sweden)

    Trache D.

    2013-07-01

    Full Text Available Many cereal straws have been used as raw materials for the preparation of microcrystalline cellulose (MCC. These raw materials were gradually replaced with wood products; nevertheless about 10% of the world overall pulp production is obtained from non-wood raw material. The main interest in pulp made from straw is that it provides excellent fibres for different industries with special properties, and that it is the major available source of fibrous raw material in some geographical areas. The aim of the present work was to characterize microcrystalline cellulose prepared from alfa fibers using the hydrolysis process. The products obtained are characterized with FTIR spectroscopy and X-ray powder diffraction. As a result, FTIR spectroscopy is an appropriate technique for studying changes occurred by any chemical treatment. The spectrum of alfa grass stems shows the presence of lignin and hemicelluloses. However, the cellulose spectrum indicates that the extraction of lignin and hemicellulose was effective. The X-ray analysis indicates that the microcrystalline cellulose is more crystalline than the source material.

  3. Thin-film silicon solar cell technology

    Czech Academy of Sciences Publication Activity Database

    Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

    2004-01-01

    Roč. 12, - (2004), s. 113-142 ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogenerated amorphous silicon(a-Si:H) * hydrogenerated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building-integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

  4. Some Physical Characteristics of Microcrystalline Cellulose ...

    African Journals Online (AJOL)

    Purpose: The microcrystalline cellulose is an important ingredient in pharmaceutical, food, cosmetic and other industries. This study aimed at evaluating the physical characteristics of microcrystalline cellulose (CP-MCC), obtained from the raw cotton of Cochlospermum planchonii. Methods: CP-MCC was obtained from the ...

  5. Visible light activated TiO2/microcrystalline cellulose nanocatalyst to destroy organic contaminants in water.

    Science.gov (United States)

    Hybrid TiO2/microcrystalline cellulose (MC) nanophotocatalyst was prepared in situ by a facile and simple synthesis utilizing benign precursors such as MC and TiCl4. The as-prepared nanocomposite was characterized by XRD, XPS, BET surface area analyzer, UV–vis DRS and TGA. Surfac...

  6. Preparation of micro-pored silicone elastomer through radiation crosslinking

    International Nuclear Information System (INIS)

    Gao Xiaoling; Gu Mei; Xie Xubing; Huang Wei

    2013-01-01

    The radiation crosslinking was adopted to prepare the micro-pored silicone elastomer, which was performed by vulcanization and foaming respectively. Radiation crosslinking is a new method to prepare micro-pored material with high performance by use of radiation technology. Silicon dioxide was used as filler, and silicone elastomer was vulcanized by electron beams, then the micro-pored material was made by heating method at a high temperature. The effects of absorbed dose and filler content on the performance and morphology were investigated. The structure and distribution of pores were observed by SEM. The results show that the micro-pored silicon elastomer can be prepared successfully by controlling the absorbed dose and filler content. It has a smooth surface similar to a rubber meanwhile the pores are round and unconnected to each other with the minimum size of 14 μm. And the good mechanical performance can be suitable for further uses. (authors)

  7. Facile synthesis of TiO2/microcrystalline cellulose nanocomposites: photocatalytically active material under visible light irradiation

    Science.gov (United States)

    Doped TiO2 nanocomposites were prepared in situ by a facile and simple synthesis utilizing benign and renewable precursors such as microcrystalline cellulose (MC) and TiCl4 through hydrolysis in alkaline medium without the addition of organic solvents. The as-prepared nanocompos...

  8. Preparation of fullerene/glass composites

    Science.gov (United States)

    Mattes, Benjamin R.; McBranch, Duncan W.; Robinson, Jeanne M.; Koskelo, Aaron C.; Love, Steven P.

    1995-01-01

    Synthesis of fullerene/glass composites. A direct method for preparing solid solutions of C.sub.60 in silicon dioxide (SiO.sub.2) glass matrices by means of sol-gel chemistry is described. In order to produce highly concentrated fullerene-sol-gel-composites it is necessary to increase the solubility of these "guests" in a delivery solvent which is compatible with the starter sol (receiving solvent). Sonication results in aggregate disruption by treatment with high frequency sound waves, thereby accelerating the rate of hydrolysis of the alkoxide precursor, and the solution process for the C.sub.60. Depending upon the preparative procedure, C.sub.60 dispersed within the glass matrix as microcrystalline domains, or dispersed as true molecular solutions of C.sub.60 in a solid glass matrix, is generated by the present method.

  9. EPR response of sucrose and microcrystalline cellulose to measure high doses of gamma radiation

    International Nuclear Information System (INIS)

    Torijano, E.; Cruz, L.; Gutierrez, G.; Azorin, J.; Aguirre, F.; Cruz Z, E.

    2015-10-01

    Solid dosimeters of sucrose and microcrystalline cellulose (Avicel Ph-102) were prepared, following the same process, in order to compare their EPR response against that of the l-alanine dosimeters considered as reference. All lots of dosimeters were irradiated with gamma radiation in Gamma beam irradiator with 8 kGy/h of the Nuclear Sciences Institute of UNAM. Doses ranged from 1 to 10 kGy respectively. We found that both the response of sucrose as microcrystalline cellulose were linear; however, the response intensity was, on average, twenty times more for sucrose. Comparing this against the EPR response of l-alanine in the range of doses, it was found that the response to sucrose is a third part; and microcrystalline cellulose is a sixtieth, approximately. The results agree with those found in the literature for sucrose, leaving open the possibility of investigating other dosage ranges for cellulose. (Author)

  10. Progress in thin-film silicon solar cells based on photonic-crystal structures

    Science.gov (United States)

    Ishizaki, Kenji; De Zoysa, Menaka; Tanaka, Yoshinori; Jeon, Seung-Woo; Noda, Susumu

    2018-06-01

    We review the recent progress in thin-film silicon solar cells with photonic crystals, where absorption enhancement is achieved by using large-area resonant effects in photonic crystals. First, a definitive guideline for enhancing light absorption in a wide wavelength range (600–1100 nm) is introduced, showing that the formation of multiple band edges utilizing higher-order modes confined in the thickness direction and the introduction of photonic superlattice structures enable significant absorption enhancement, exceeding that observed for conventional random scatterers. Subsequently, experimental evidence of this enhancement is demonstrated for a variety of thin-film Si solar cells: ∼500-nm-thick ultrathin microcrystalline silicon cells, few-µm-thick microcrystalline silicon cells, and ∼20-µm-thick thin single-crystalline silicon cells. The high short-circuit current densities and/or efficiencies observed for each cell structure confirm the effectiveness of using multiple band-edge resonant modes of photonic crystals for enhancing broadband absorption in actual solar cells.

  11. An improved method of preparing silicon carbide

    International Nuclear Information System (INIS)

    Baney, R.H.

    1979-01-01

    A method of preparing silicon carbide is described which comprises forming a desired shape from a polysilane of the average formula:[(CH 3 ) 2 Si][CH 3 Si]. The polysilane contains from 0 to 60 mole percent (CH 3 ) 2 Si units and from 40 to 100 mole percent CH 3 Si units. The remaining bonds on the silicon are attached to another silicon atom or to a halogen atom in such manner that the average ratio of halogen to silicon in the polysilane is from 0.3:1 to 1:1. The polysilane has a melt viscosity at 150 0 C of from 0.005 to 500 Pa.s and an intrinsic viscosity in toluene of from 0.0001 to 0.1. The shaped polysilane is heated in an inert atmosphere or in a vacuum to an elevated temperature until the polysilane is converted to silicon carbide. (author)

  12. Properties of microcrystalline cellulose obtained from coconut ...

    African Journals Online (AJOL)

    The study revealed that the cellulose material compares favourably with Avicel PH 101 as well as official requirement specified in the British Pharmacopoeia 1993 for microcrystalline cellulose. Keywords: Coconut fruit fibre, microcrystalline cellulose, powder properties. Journal of Pharmacy and Bioresources Vol. 3 (1) 2006: ...

  13. Isolation and characterization of microcrystalline cellulose obtained ...

    African Journals Online (AJOL)

    In this study, microcrystalline cellulose, coded MCC-PNF, was obtained from palm nut (Elaeis guineensis) fibres. MCC-PNF was examined for its physicochemical and powder properties. The powder properties of MCC-PNF were compared to those of the best commercial microcrystalline cellulose grade, Avicel PH 101.

  14. Characterization of silicon oxynitride films prepared by the simultaneous implantation of oxygen and nitrogen ions into silicon

    International Nuclear Information System (INIS)

    Hezel, R.; Streb, W.

    1985-01-01

    Silicon oxynitride films about 5 nm in thickness were prepared by simultaneously implanting 5 keV oxygen and nitrogen ions into silicon at room temperature up to saturation. These films with concentrations ranging from pure silicon oxide to silicon nitride were characterized using Auger electron spectroscopy, electron energy loss spectroscopy and depth-concentration profiling. The different behaviour of the silicon oxynitride films compared with those of silicon oxide and silicon nitride with regard to thermal stability and hardness against electron and argon ion irradiation is pointed out. (Auth.)

  15. Disilane as a growth rate catalyst of plasma deposited microcrystalline silicon thin films

    Science.gov (United States)

    Dimitrakellis, P.; Kalampounias, A. G.; Spiliopoulos, N.; Amanatides, E.; Mataras, D.; Lahootun, V.; Coeuret, F.; Madec, A.

    2016-07-01

    The effect of small disilane addition on the gas phase properties of silane-hydrogen plasmas and the microcrystalline silicon thin films growth is presented. The investigation was conducted in the high pressure regime and for constant power dissipation in the discharge with the support of plasma diagnostics, thin film studies and calculations of discharge microscopic parameters and gas dissociation rates. The experimental data and the calculations show a strong effect of disilane on the electrical properties of the discharge in the pressure window from 2 to 3 Torr that is followed by significant raise of the electron number density and the drop of the sheaths electric field intensity. Deposition rate measurements show an important four to six times increase even for disilane mole fractions as low as 0.3 %. The deposition rate enhancement was followed by a drop of the material crystalline volume fraction but films with crystallinity above 40 % were deposited with different combinations of total gas pressure, disilane and silane molar ratios. The enhancement was partly explained by the increase of the electron impact dissociation rate of silane which rises by 40% even for 0.1% disilane mole fraction. The calculations of the gas usage, the dissociation and the deposition efficiencies show that the beneficial effect on the growth rate is not just the result of the increase of Si-containing molecules density but significant changes on the species participating to the deposition and the mechanism of the film growth are caused by the disilane addition. The enhanced participation of the highly sticking to the surface radical such as disilylene, which is the main product of disilane dissociation, was considered as the most probable reason for the significant raise of the deposition efficiency. The catalytic effect of such type of radical on the surface reactivity of species with lower sticking probability is further discussed, while it is also used to explain the restricted

  16. Disilane as a growth rate catalyst of plasma deposited microcrystalline silicon thin films

    International Nuclear Information System (INIS)

    Dimitrakellis, P.; Amanatides, E.; Mataras, D.; Kalampounias, A. G.; Spiliopoulos, N.; Lahootun, V.; Coeuret, F.; Madec, A.

    2016-01-01

    The effect of small disilane addition on the gas phase properties of silane-hydrogen plasmas and the microcrystalline silicon thin films growth is presented. The investigation was conducted in the high pressure regime and for constant power dissipation in the discharge with the support of plasma diagnostics, thin film studies and calculations of discharge microscopic parameters and gas dissociation rates. The experimental data and the calculations show a strong effect of disilane on the electrical properties of the discharge in the pressure window from 2 to 3 Torr that is followed by significant raise of the electron number density and the drop of the sheaths electric field intensity. Deposition rate measurements show an important four to six times increase even for disilane mole fractions as low as 0.3 %. The deposition rate enhancement was followed by a drop of the material crystalline volume fraction but films with crystallinity above 40 % were deposited with different combinations of total gas pressure, disilane and silane molar ratios. The enhancement was partly explained by the increase of the electron impact dissociation rate of silane which rises by 40% even for 0.1% disilane mole fraction. The calculations of the gas usage, the dissociation and the deposition efficiencies show that the beneficial effect on the growth rate is not just the result of the increase of Si-containing molecules density but significant changes on the species participating to the deposition and the mechanism of the film growth are caused by the disilane addition. The enhanced participation of the highly sticking to the surface radical such as disilylene, which is the main product of disilane dissociation, was considered as the most probable reason for the significant raise of the deposition efficiency. The catalytic effect of such type of radical on the surface reactivity of species with lower sticking probability is further discussed, while it is also used to explain the restricted

  17. Direct compression properties of microcrystalline cellulose and its ...

    African Journals Online (AJOL)

    The influence of silicified microcrystalline cellulose (SMCC) on the flow, compaction and tableting properties of metronidazole powder was investigated. The study compared medium grades of both SMCC and standard microcrystalline cellulose (MCC) as direct compressible excipients. The bulk densities, Hausner quotient ...

  18. Fe3O4 Modification of Microcrystalline Cellulose for Composite Materials

    OpenAIRE

    Dimitrov, Kiril; Herzog, Michael; Nenkova, Sanchi

    2013-01-01

    A new synthesis method for producing cellulose ferrite micro- and nano- composites was developed and new material properties were studied. Microcrystalline cellulose was modified with a mixture of Fe+2/Fe+3 to produce surface bonded nanoparticles magnetite (Fe3O4). Optimal conditions were determined. Microsized hematite (Fe2O3) was mixed with microcrystalline cellulose and used as a reference. The magnetite modified microcrystalline cellulose and hematite filled microcrystalline cellulose wer...

  19. Preparation and Properties of EPDM/Silicone Alloy Using Maleated EPDM-polydimethylsiloxane Compatibilizer

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Doo Whan; Kim, Bum Jin [Hyperstructured Organic Materials Research Center, Department of Polymer Science and Engineering, Dankook University, Seoul (Korea); Shim, Dae Sup [Korea Electrotechnology Research Institute, Euiwang (Korea)

    2001-05-01

    EPDM used as an electrical insulating material was blended with silicone rubber and compatibilizer to improve weatherability, ozone resistance, and dielectric strength. The compatibilizer was prepared by imidizing maleated EPDM with {alpha},{omega}-aminopropyl polydimethylsiloxane. EPDM/ silicone alloy was prepared by blending EPDM and silicone rubber with weight ratio of 9/1, 7/3, 5/5, 3/7 and 1/9, maleated EPDM-polydimethylsiloxane copolymer, and dicumyl peroxide (DCP). The maximum tensile strength of 0.177 kgf/mm{sup 2}, elongation at break of 257%, and dielectric breakdown voltage 362.25 kV/cm were obtained from the alloy prepared with 9 to 1 weight ration of EPDM/silicone. The compatibility of the alloy was confirmed from the thermal characteristics measured using DMA and DSC. The morphology of the alloys was observed with SEM. 7 refs., 8 figs., 1 tab.

  20. Evaluation of Chitosan-Microcrystalline Cellulose Blends as Direct Compression Excipients

    Directory of Open Access Journals (Sweden)

    Emmanuel O. Olorunsola

    2017-01-01

    Full Text Available This study was aimed at evaluating chitosan-microcrystalline cellulose blends as direct compression excipients. Crab shell chitosan, α-lactose monohydrate, and microcrystalline cellulose powders were characterized. Blends of the microcrystalline cellulose and chitosan in ratios 9 : 1, 4 : 1, 2 : 1, and 1 : 1 as direct compression excipients were made to constitute 60% of metronidazole tablets. Similar tablets containing blends of the microcrystalline cellulose and α-lactose monohydrate as well as those containing pure microcrystalline cellulose were also produced. The compact density, tensile strength, porosity, disintegration time, and dissolution rate of tablets were determined. Chitosan had higher moisture content (7.66% and higher moisture sorption capacity (1.33% compared to microcrystalline cellulose and lactose. It also showed better flow properties (Carr’s index of 18.9% and Hausner’s ratio of 1.23. Compact density of tablets increased but tensile strength decreased with increase in the proportion of chitosan in the binary mixtures. In contrast to lactose, the disintegration time increased and the dissolution rate decreased with increase in the proportion of chitosan. This study has shown that chitosan promotes flowability of powder mix and rapid disintegration of tablet. However, incorporation of equal proportions of microcrystalline cellulose and chitosan leads to production of extended-release tablet. Therefore, chitosan promotes tablet disintegration at low concentration and enables extended-release at higher concentration.

  1. Preparation of aluminum nitride-silicon carbide nanocomposite powder by the nitridation of aluminum silicon carbide

    NARCIS (Netherlands)

    Itatani, K.; Tsukamoto, R.; Delsing, A.C.A.; Hintzen, H.T.J.M.; Okada, I.

    2002-01-01

    Aluminum nitride (AlN)-silicon carbide (SiC) nanocomposite powders were prepared by the nitridation of aluminum-silicon carbide (Al4SiC4) with the specific surface area of 15.5 m2·g-1. The powders nitrided at and above 1400°C for 3 h contained the 2H-phases which consisted of AlN-rich and SiC-rich

  2. LiF enhanced nucleation of the low temperature microcrystalline silicon prepared by plasma enhanced chemical vapour deposition

    Czech Academy of Sciences Publication Activity Database

    Stuchlík, Jiří; Ledinský, Martin; Honda, Shinya; Drbohlav, Ivo; Mates, Tomáš; Fejfar, Antonín; Hruška, Karel; Stuchlíková, The-Ha; Kočka, Jan

    2009-01-01

    Roč. 517, č. 24 (2009), s. 6829-6832 ISSN 0040-6090 R&D Projects: GA AV ČR KAN400100701; GA ČR(CZ) GD202/05/H003; GA MŠk LC510; GA AV ČR IAA1010413 Institutional research plan: CEZ:AV0Z10100521 Keywords : amorphous hydrogenated silicon * atomic force microscopy * plasma-enhanced chemical vapour deposition, * nucleation * Raman scattering * lithium fluoride Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.727, year: 2009

  3. Microcrystalline identification of selected designer drugs.

    Science.gov (United States)

    Elie, Leonie; Baron, Mark; Croxton, Ruth; Elie, Mathieu

    2012-01-10

    A microcrystalline test for the detection of 4-methylmethcathinone (mephedrone), benzylpiperazine (BZP) and 5,6-methylenedioxy-2-aminoindane (MDAI) using aqueous solutions of mercury chloride is described. Each of the compounds investigated formed specific drug-reagent crystals within minutes. The uniqueness of the test was confirmed by comparison of the microcrystalline response to that of other psychoactive stimulants and a common cutting agent. The limit of detection and cut-off levels for reference standards were established to 3 g/L and 5 g/L for mephedrone, 0.5 g/L for MDAI and 0.2 g/L and 0.3 g/L for BZP, respectively. Various mixtures of standards of either mephedrone, BZP or MDAI combined with caffeine were investigated for their microcrystalline response. Results showed that simultaneous detection of drug and cutting agent was possible with the concentrations tested but were dependant on the ratio of drug to cutting agent. BZP could be detected alongside caffeine from as low as 20% (v/v), MDAI from 40% (v/v) and mephedrone from 50% (v/v) and higher. Finally, seven samples of online purchased 'legal highs' were analysed using the developed test and the findings were compared to FTIR and GC-MS results. It was shown that 6 out of 7 samples did not contain the advertised active ingredient. Five samples consisted of BZP, caffeine and 1-[3-(trifluoromethyl)phenyl]piperazine (3-TFMPP). The microcrystalline tests carried out on these samples showed positive results for both BZP and caffeine without interference from other substances present. Copyright © 2011 Elsevier Ireland Ltd. All rights reserved.

  4. Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells

    OpenAIRE

    Sritharathikhun, Jaran; Krajangsang, Taweewat; Moollakorn, Apichan; Inthisang, Sorapong; Limmanee, Amornrat; Hongsingtong, Aswin; Boriraksantikul, Nattaphong; Taratiwat, Tianchai; Akarapanjavit, Nirod; Sriprapha, Kobsak

    2014-01-01

    This paper reports the preparation of wide gap p-type hydrogenated microcrystalline silicon oxide (p-μc-SiO:H) films using a 40 MHz very high frequency plasma enhanced chemical vapor deposition technique. The reported work focused on the effects of the CO2/SiH4 ratio on the properties of p-μc-SiO:H films and the effectiveness of the films as an emitter layer of crystalline silicon heterojunction (c-Si-HJ) solar cells. A p-μc-SiO:H film with a wide optical band gap (E04), 2.1 eV, can be obtain...

  5. Exploring the potential of polacrilin potassium as a novel superdisintegrant in microcrystalline cellulose based pellets prepared by extrusion-spheronization

    Directory of Open Access Journals (Sweden)

    Amita K Joshi

    2011-01-01

    Full Text Available Polacrilin potassium (PP, an ion exchange resin, was used as a superdisintegrant to improve the dissolution of rifampicin, from microcrystalline cellulose (MCC based pellets prepared by extrusion-spheronization. Production of fast release pellets by extrusion-spheronization using MCC is a complicated process. In the present study, pellets were prepared containing 50% w/w rifampicin (BCS class II drug and 40% w/w MCC as extrusion-spheronization aid. Different levels of PP and lactose ratio investigated were 0:10, 2:8, 4:6, 6:4, 8:2, and 10:0. Pellets were evaluated for yield, size, size distribution, shape, porosity, friability, residual moisture, and dissolution efficiency (DE at 30 minutes. Incorporation of this novel superdisintegrant had no adverse effect on the mechanical and micromeritic characteristics of pellets. All the batches of pellets showed high yields′, ~90%; narrow particle size distribution; aspect ratio, 1.0-1.1; friability, <1%; and porosity, 45.51-49.84%. Dissolution profiles were compared using model-independent approaches; DE and similarity factor, f 2 . Addition of Polacrilin results in significant improvement in the DE of rifampicin. The dissolution profiles were significantly different from the dissolution profile of pellets formulated without PP. This preliminary study indicates that PP can serve as an effective superdisintegrant in MCC pellets prepared by extrusion-spheronization.

  6. Antibody bond to the microcrystalline cellulose in progesterone radioimmunoassay

    International Nuclear Information System (INIS)

    Krnavek, B.

    1992-01-01

    A suspension of microcrystalline cellulose with bonded globulin fraction of the polyclonal antibody against progesterone was prepared and applied to the radioimmunoanalysis of progesterone in full milk and in blood serum. The results were compared with those obtained using RETRO-test kits; the comparison gave evidence that the novel technique can fully replace the RETRO-test, the elimination of the separating medium (activated carbon, polyethylene glycol) being an asset. The obtained correlation coefficient and regression equation for a simultaneous determination of 120 samples by the two methods were r = 0.964 and y = 1.113x - 0.939, respectively

  7. Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Guy Beaucarne

    2007-01-01

    with plasma-enhanced chemical vapor deposition (PECVD. In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

  8. Raman crystallinity and Hall Effect studies of microcrystalline silicon ...

    African Journals Online (AJOL)

    Aluminium induced crystallization (AIC) was used to crystallize sputtered amorphous silicon thin films on aluminium‐coated glass at annealing temperatures ranging from 250‐520°C in vacuum. Crystalline volume fractions were measured by Raman spectrometry as a function of annealing temperature. It was shown that the ...

  9. Analysis of structure and defects in thin silicon films deposited from hydrogen diluted silane

    International Nuclear Information System (INIS)

    Elzakker, G. van; Nadazdy, V.; Tichelaar, F.D.; Metselaar, J.W.; Zeman, M.

    2006-01-01

    Thin silicon layers have been deposited from silane diluted with hydrogen. The dilution ratio R (R = [H 2 ]/[SiH 4 ]) has been varied between R = 0 and R = 40. The structural properties of Si:H films have been studied using transmission electron microscopy imaging and Raman spectroscopy. The phase evolution from the amorphous phase into the mixed and eventually microcrystalline phase strongly depends on the hydrogen dilution. The initiation of the microcrystalline growth occurs between R = 20 and R = 25. The phase transition becomes more abrupt with increasing hydrogen dilution. Optoelectronic properties of the layers have been determined. Increasing hydrogen dilution results in films with increasing effective defect density and Urbach energy, which is related to inhomogeneous growth. The charge deep-level transient spectroscopy technique (Q-DLTS) was applied for the first time on hydrogen diluted thin silicon films in order to investigate the energy distribution of the defect states in these layers as a function of the dilution ratio R. The Q-DLTS spectra indicate a difference in defect-state distribution when the films evolve from the amorphous phase into the microcrystalline phase

  10. Investigation into the suitability of capillary tubes for microcrystalline testing.

    Science.gov (United States)

    Elie, Leonie E; Baron, Mark G; Croxton, Ruth S; Elie, Mathieu P

    2013-07-01

    A comparison between microcrystalline tests performed on microscope slides and flat capillary tubes with inner diameters ranging from 0.1 to 0.7 mm was carried out to explore the appropriateness of tubes for rapid testing of suspected drugs of abuse in the laboratory as well as in the field. Tests for mephedrone, cocaine, and phencyclidine were chosen as examples to investigate the handling of the capillary tubes, the influence on crystal habit, size, and the effects on the limit of detection. Image stacking software was used to increase the depth of field of micrographs taken from developed microcrystals greatly enhancing the interpretability even months after carrying out the microcrystalline test. Additionally, the potential of seeding capillary tubes with a reagent was studied. Pre-treatment of tubes would allow microcrystalline tests to be carried out quicker and anywhere without the necessity of taking along expensive and hazardous reagents. The sealing of capillary tubes containing developed microcrystalline tests in order to preserve results for a long period of time was successfully done by applying paraffin wax to the open ends. Finally, it was concluded that capillary tubes are suitable vessels for performing microcrystalline tests. The increased portability of the improved set-up allows tests to be safely executed outside laboratories without impairing the quality of the result. Findings were applied to six legal high samples purchased online between May and August 2011. The active ingredients like MDAI as well as cutting agents like caffeine were successfully identified using the microcrystalline test technique in capillary tubes. Copyright © 2012 John Wiley & Sons, Ltd.

  11. Light-Induced Degradation of Thin Film Silicon Solar Cells

    International Nuclear Information System (INIS)

    Hamelmann, F U; Weicht, J A; Behrens, G

    2016-01-01

    Silicon-wafer based solar cells are still domination the market for photovoltaic energy conversion. However, most of the silicon is used only for mechanical stability, while only a small percentage of the material is needed for the light absorption. Thin film silicon technology reduces the material demand to just some hundred nanometer thickness. But even in a tandem stack (amorphous and microcrystalline silicon) the efficiencies are lower, and light-induced degradation is an important issue. The established standard tests for characterisation are not precise enough to predict the performance of thin film silicon solar cells under real conditions, since many factors do have an influence on the degradation. We will show some results of laboratory and outdoor measurements that we are going to use as a base for advanced modelling and simulation methods. (paper)

  12. Strongly Enhanced Free-Exciton Luminescence in Microcrystalline CsPbBr3 Films

    Science.gov (United States)

    Kondo, Shin-ichi; Kakuchi, Mitsugu; Masaki, Atsushi; Saito, Tadaaki

    2003-07-01

    The luminescence properties of CsPbBr3 films prepared via the amorphous phase by crystallization are dominated by free-exciton emission, and only a weak trace of emission due to trapped excitons was observed, in contrast to the case of bulk CsPbBr3 crystals. In particular, the films in the microcrystalline state show by more than an order of magnitude stronger free-exciton emission than in the polycrystalline state. The enhanced free-exciton emission is suggestive of excitonic superradiance.

  13. Preparing rare earth-silicon-iron-aluminum alloys

    International Nuclear Information System (INIS)

    Marchant, J.D.; Morrice, E.; Herve, B.P.; Wong, M.M.

    1980-01-01

    As part of its mission to assure the maximum recovery and use of the Nation's mineral resources, the Bureau of Mines, investigated an improved procedure for producing rare earth-silicon alloys. For example, a charge consisting of 681 grams of mixed rare-earth oxides, 309 grams of ferrosilicon (75 wt-pct Si), and 182 grams of aluminum metal along with a flux consisting of 681 grams of CaO and 45 grams of MgO was reacted at 1500 0 C in an induction furnace. Good slag-metal separation was achieved. The alloy product contained, in weight-percent, 53 RE, 28 Si, 11 Fe, and 4 Al with a rare earth recovery of 80 pct. In current industrial practice rare earth recoveries are usually about 60 pct in alloy products that contain approximately 30 wt-pct each of rare earths and silicon. Metallurgical evaluations showed the alloys prepared in this investigation to be as effective in controlling the detrimental effect of sulfur in steel and cast iron as the commercial rare earth-silicon-iron alloys presently used in the steel industry

  14. In and Ga Codoped ZnO Film as a Front Electrode for Thin Film Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Duy Phong Pham

    2014-01-01

    Full Text Available Doped ZnO thin films have attracted much attention in the research community as front-contact transparent conducting electrodes in thin film silicon solar cells. The prerequisite in both low resistivity and high transmittance in visible and near-infrared region for hydrogenated microcrystalline or amorphous/microcrystalline tandem thin film silicon solar cells has promoted further improvements of this material. In this work, we propose the combination of major Ga and minor In impurities codoped in ZnO film (IGZO to improve the film optoelectronic properties. A wide range of Ga and In contents in sputtering targets was explored to find optimum optical and electrical properties of deposited films. The results show that an appropriate combination of In and Ga atoms in ZnO material, followed by in-air thermal annealing process, can enhance the crystallization, conductivity, and transmittance of IGZO thin films, which can be well used as front-contact electrodes in thin film silicon solar cells.

  15. Defects study of hydrogenated amorphous silicon samples and their relation with the substrate and deposition conditions

    International Nuclear Information System (INIS)

    Darwich, R.

    2009-07-01

    The goal of this work is to study the properties of the defects aiming to explore the types of defects and the effect of various deposition parameters such as substrate temperature, the kind of the substrate, gas pressure and deposition rate. Two kinds of samples have been used; The first one was a series of Schottky diodes, and the second one a series of solar cells (p-i-n junction) deposited on crystalline silicon or on corning glass substrates with different deposition parameters. The deposition parameters were chosen to obtain materials whose their structures varying from amorphous to microcrystalline silicon including polymorphous silicon. Our results show that the polymorphous silicon samples deposited at high deposition rates present the best photovoltaic properties in comparison with those deposited at low rates. Also we found that the defects concentration in high deposition rate samples is less at least by two orders than that obtained in low deposition rate polymorphous, microcrystalline and amorphous samples. This study shows also that there is no effect of the substrate, or the thin films of highly doped amorphous silicon deposited on the substrate, on the creation and properties of these defects. Finally, different experimental methods have been used; a comparison between their results has been presented. (author)

  16. Method for the preparation of n-i-p type radiation detector from silicon

    International Nuclear Information System (INIS)

    Keleti, J.; Toeroek, T.; Lukacs, J.; Molnar, I.

    1978-01-01

    The patent describes a procedure for the preparation of n-i-p type silicon radiation detectors. The aim was to provide an adaquate procedure for the production of α, β, γ-detectors from silicon available on the market, either p-type single crystal silicon characterised by its boron level. The procedure and the 9 claims are illustrated by two examples. (Sz.J.)

  17. A comparative study on the direct deposition of μc-Si:H and plasma-induced recrystallization of a-Si:H: Insight into Si crystallization in a high-density plasma

    Science.gov (United States)

    Zhou, H. P.; Xu, M.; Xu, S.; Feng, Y. Y.; Xu, L. X.; Wei, D. Y.; Xiao, S. Q.

    2018-03-01

    Deep insight into the crystallization mechanism of amorphous silicon is of theoretical and technological significance for the preparation of high-quality microcrystalline/polycrystalline silicon. In this work, we intensively compare the present two plasma-involved routes, i.e., the direct deposition and recrystallization of precursor amorphous silicon (a-Si) films, to fabricate microcrystalline silicon. Both the directly deposited and recrystallized samples show multi-layered structures as revealed by electronic microscopy. High-density hydrogen plasma involved recrystallization process, which is mediated by the hydrogen diffusion into the deep region of the precursor a-Si film, displays significantly different nucleation configuration, interface properties, and crystallite shape. The underlying mechanisms are analyzed in combination with the interplay of high-density plasma and growing or treated surface.

  18. Physicochemical Characterization of Microcrystalline Cellulose Extracted from Kenaf Bast

    Directory of Open Access Journals (Sweden)

    N. A. Sri Aprilia

    2016-03-01

    Full Text Available Microcrystalline cellulose (MCC was successfully prepared from bleached kenaf bast fiber through hydrochloric acid hydrolysis. The influence of hydrolysis time (1 to 3 h on the MCC physicochemical properties was examined. Scanning electron microscopy (SEM, X-ray diffraction (XRD, particle size analysis, Fourier transform infrared spectroscopy (FT-IR, and thermal gravimetric analysis (TGA were utilized to characterize the isolated MCC. According to FTIR analysis, the chemical composition of MCC was not changed with the reaction time. The reaction times, however, did affect the thermal stability of MCC. The thermal stability decreased linearly with increasing hydrolysis time. The optimum hydrolysis time was determined based on the morphological, structural, and thermal properties of the kenaf bast MCC.

  19. On the compressibility of TiC in microcrystalline and nanoparticulate form

    International Nuclear Information System (INIS)

    Gu, Q F; Krauss, G; Steurer, W; Gramm, F

    2008-01-01

    The compressibility of TiC in microcrystalline and nanoparticulate (30-50 nm) form was studied by in situ high-pressure synchrotron radiation x-ray diffraction measurements up to 53.7 GPa using a diamond anvil cell. Both materials are structurally stable within the framework of the experiments applying quasihydrostatic pressure conditions. Under nonhydrostatic pressure conditions, the lattice of microcrystalline TiC is rhombohedrally distorted. Comparable values for the bulk modulus were found for both materials, i.e. K 0 = 254(7) GPa, K' = 4.8(4) for microcrystalline TiC and K 0 = 276(14) GPa, K' = 3.5(8) for nanoparticulate TiC, respectively. High-resolution transmission electron microscopy investigations revealed a nearly single-domain microstructure of the nanoparticles. The microstructure and size of the nanoparticles, making a size-induced effect on the mechanical properties negligible, explain well the observed similarity of the mechanical properties of microcrystalline and nanoparticulate TiC.

  20. Polyvinyl Chloride / Attapulgite / Micro-crystalline Cellulose (MCC Composites Preparation and Analysis of the Role of MCC as a Compatibilizer

    Directory of Open Access Journals (Sweden)

    Bo Wang

    2015-09-01

    Full Text Available To improve the performance of polyvinyl chloride (PVC, composites incorporating polyvinyl chloride (PVC, attapulgite nanoparticles (ANPs, and microcrystalline cellulose (MCC were successfully prepared. The composites had higher vicat softening temperatures (VSTs and the MCC had a great influence on mechanical properties of the composites. When MCC was added from 0 to 5 per hundred parts of PVC (phr, the mechanical properties of the composites increased, but the mechanical properties of the composites decreased when the MCC was more than 5 phr. The tensile breaking stress, tensile strength, and impact strength were maximized with increases of 19.76 N (4.1%, 29.66 MPa (15.5%, and 13.8 MPa (7% when 5 phr MCC was added. Infrared spectral analysis indicated that MCC and ANPs were present in the composites. Scanning electron microscopy showed that the composites system was distributed into two phases, which indicated that MCC in composites was dissolved in the PVC matrix, and some of MCC coated the surface of ANPs as a compatibilizer. Overall, this study provided a promising method for PVC modification to improve its performance.

  1. Silicon-organic pigment material hybrids for photovoltaic application

    Energy Technology Data Exchange (ETDEWEB)

    Mayer, T.; Weiler, U.; Jaegermann, W. [Institute of Materials Science, Darmstadt University of Technology, Petersenstreet 23, D-64287 Darmstadt (Germany); Kelting, C.; Schlettwein, D. [Institute for Applied Physics, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen (Germany); Makarov, S.; Woehrle, D. [Institute of Organic and Macromolecular Chemistry, University Bremen, Leobener Street NW II, D-28359 Bremen (Germany); Abdallah, O.; Kunst, M. [Department Solar Energy, Hahn-Meitner-Institute, D-14109 Berlin (Germany)

    2007-12-14

    Hybrid materials of silicon and organic dyes have been investigated for possible application as photovoltaic material in thin film solar cells. High conversion efficiency is expected from the combination of the advantages of organic dyes for light absorption and those of silicon for charge carrier separation and transport. Low temperature remote hot wire chemical vapor deposition (HWCVD) was developed for microcrystalline silicon ({mu}c-Si) deposition using SiH{sub 4}/H{sub 2} mixtures. As model dyes zinc phthalocyanines have been evaporated from Knudsen type sources. Layers of dye on {mu}c-Si and {mu}c-Si on dye films, and composites of simultaneously and sequentially deposited Si and dye have been prepared and characterized. Raman, absorption, and photoemission spectroscopy prove the stability of the organic molecules against the rough HWCVD-Si process. Transient microwave conductivity (TRMC) indicates good electronic quality of the {mu}c-Si matrix. Energy transfer from dye to Si is indicated indirectly by luminescence and directly by photoconductivity measurements. F{sub x}ZnPc pigments with x=0,4,8,16 have been synthesized, purified and adsorbed onto H-terminated Si(1 1 1) for electronic state line up determination by photoelectron spectroscopy. For x=4 and 8 the dye frontier orbitals line up symmetrically versus the Si energy gap offering similar energetic driving forces for electron and hole injection, which is considered optimum for bulk sensitization and indicates a direction to improve the optoelectronic coupling of the organic dyes to silicon. (author)

  2. Titanium-silicon films prepared by spin and dip-coating

    International Nuclear Information System (INIS)

    Nassar, Eduardo J.; Ciuffi, Katia J.; Goncalves, Rogeria R.; Messaddeq, Younes; Ribeiro, Sidney J.L.

    2003-01-01

    The conditions for the preparation of luminescent materials, consisting of Eu 3+ ions entrapped in a titanium matrix, in the form of a thin film, using the sol-gel process, are described. The films were obtained from sols prepared with TEOS and TEOT, in the presence of acetylacetone as the hydrolysis-retarding agent, using the dip-coating and spin-coating techniques. The influence of these techniques on the films based on titanium and silicon are presented. The Eu 3+ was used as a luminescent probe. The films have been characterized by luminescence, reflection and transmittance. The thickness of the films could be related to the preparation procedure. Transparent thin films have been prepared by dip-coating technique. (author)

  3. Process Development in the Preparation and Characterization of Silicon Alkoxide From Rice Husk

    International Nuclear Information System (INIS)

    Khin San Win; Toe Shein; Nyunt Wynn

    2011-12-01

    The preparation and characterization of silicon alkoxide (silicon isopropoxide) from rice husk char has been studied. In the investigation, four kinds of Myanmar paddies were chemically assayed. Analyses showed the silicon contend varies from 73-92% . Based on the silicon content, the process development in the production of silicon isopropoxide was carried out. In the process development, silicon isopropoxide with a yield of 44.21% was achieved by the direct reaction of isopropanol in situ by silicon tetrachloride, which was directly produced by the chlorination of rice husk char at the high temperature range of 900-1100 C. The novelity of the process was that, silicon isopropoxide was achieved in situ and not by using the old process, where generally isopropanol was reacted with silicon tetrachloride. The physiochemical properties of silicon isopropoxide was confirmed by conventional and modern techniques. In the investigation, the starting materials, silica in the reaction products were characterized, identified and confirmed by modren techniques. Silicon isopropoxide can be a sources of pore silica whereby silicon of 97-99% of purity can be achieved.

  4. The magnetic properties of powdered and compacted microcrystalline permalloy

    International Nuclear Information System (INIS)

    Kollar, P.; Oleksakova, D.; Fuezer, J.; Kovac, J.; Roth, S.; Polanski, K.

    2007-01-01

    The aim of this work is to investigate the magnetic properties of powdered and compacted microcrystalline Ni-Fe (81 wt% of Ni) permalloy. It was found by investigating the influence of mechanical milling on the magnetic properties of powder samples prepared by milling of the ribbon that the alloy remains a solid solution with stable structure during the whole milling process. With decreasing particle size the rotation of magnetization vector gradually becomes dominant magnetization process and thus coercivity increases. After compaction of the powder by uniaxial hot pressing the magnetic contact between powder particles is recreated and for resulting bulk the displacement of the domain walls becomes dominant magnetization process with coercivity of 11 A/m (comparable with the coercivity of conventional permalloy)

  5. MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2014-01-01

    Full Text Available We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc and low fill factor (FF; however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H film is preferable for the deposition on the surface of MOCVD ZnO film rather than the microcrystalline film due to its less sensitivity to textured surface, and this allowed an improvement in the FF. The n-i-p flexible amorphous silicon solar cell using the MOCVD ZnO/screen printed Ag back reflector showed an initial efficiency of 6.2% with Voc=0.86 V, Jsc=12.4 mA/cm2, and FF = 0.58 (1 cm2. The identical quantum efficiency and comparable performance to the cells using conventional sputtered Ag back electrode have verified the potential of the MOCVD ZnO/screen printed Ag back reflector and possible opportunity to use the screen printed Ag thick film for flexible thin film silicon solar cells.

  6. Development of Hydrogenated Microcrystalline Silicon-Germanium Alloys for Improving Long-Wavelength Absorption in Si-Based Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Yen-Tang Huang

    2014-01-01

    Full Text Available Hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H alloys were developed for application in Si-based thin-film solar cells. The effects of the germane concentration (RGeH4 and the hydrogen ratio (RH2 on the μc-Si1-xGex:H alloys and the corresponding single-junction thin-film solar cells were studied. The behaviors of Ge incorporation in a-Si1-xGex:H and μc-Si1-xGex:H were also compared. Similar to a-Si1-xGex:H, the preferential Ge incorporation was observed in μc-Si1-xGex:H. Moreover, a higher RH2 significantly promoted Ge incorporation for a-Si1-xGex:H, while the Ge content was not affected by RH2 in μc-Si1-xGex:H growth. Furthermore, to eliminate the crystallization effect, the 0.9 μm thick absorbers with a similar crystalline volume fraction were applied. With the increasing RGeH4, the accompanied increase in Ge content of μc-Si1-xGex:H narrowed the bandgap and markedly enhanced the long-wavelength absorption. However, the bias-dependent EQE measurement revealed that too much Ge incorporation in absorber deteriorated carrier collection and cell performance. With the optimization of RH2 and RGeH4, the single-junction μc-Si1-xGex:H cell achieved an efficiency of 5.48%, corresponding to the crystalline volume fraction of 50.5% and Ge content of 13.2 at.%. Compared to μc-Si:H cell, the external quantum efficiency at 800 nm had a relative increase by 33.1%.

  7. Review of porous silicon preparation and its application for lithium-ion battery anodes

    International Nuclear Information System (INIS)

    Ge, M; Fang, X; Rong, J; Zhou, C

    2013-01-01

    Silicon is of great interest for use as the anode material in lithium-ion batteries due to its high capacity. However, certain properties of silicon, such as a large volume expansion during the lithiation process and the low diffusion rate of lithium in silicon, result in fast capacity degradation in limited charge/discharge cycles, especially at high current rate. Therefore, the use of silicon in real battery applications is limited. The idea of using porous silicon, to a large extent, addresses the above-mentioned issues simultaneously. In this review, we discuss the merits of using porous silicon for anodes through both theoretical and experimental study. Recent progress in the preparation of porous silicon through the template-assisted approach and the non-template approach have been highlighted. The battery performance in terms of capacity and cyclability of each structure is evaluated. (topical review)

  8. Structural and optical properties of surface-hydrogenated silicon nanocrystallites prepared by reactive pulsed laser ablation

    International Nuclear Information System (INIS)

    Makino, Toshiharu; Inada, Mitsuru; Umezu, Ikurou; Sugimura, Akira

    2005-01-01

    Pulsed laser ablation (PLA) in an inert background gas is a promising technique for preparing Si nanoparticles. Although an inert gas is appropriate for preparing pure material, a reactive background gas can be used to prepare compound nanoparticles. We performed PLA in hydrogen gas to prepare hydrogenated silicon nanoparticles. The mean diameter of the primary particles measured using transmission electron microscopy was approximately 5 nm. The hydrogen content in the deposits was very high and estimated to be about 20%. The infrared absorption corresponding to Si-H n (n = 1, 2, 3) bonds on the surface were observed at around 2100 cm -1 . The Raman scattering peak corresponding to crystalline Si was observed, and that corresponding to amorphous Si was negligibly small. These results indicate that the Si nanoparticles were not an alloy of Si and hydrogen but Si nanocrystallite (nc-Si) covered by hydrogen or hydrogenated amorphous silicon. This means that PLA in reactive H 2 gas is a promising technique for preparing surface passivated nc-Si. The deposition mechanism and optical properties of the surface passivated silicon nanocrystallites are discussed

  9. Application of hydrogen-doped In2O3 transparent conductive oxide to thin-film microcrystalline Si solar cells

    International Nuclear Information System (INIS)

    Koida, Takashi; Sai, Hitoshi; Kondo, Michio

    2010-01-01

    Hydrogen-doped In 2 O 3 (IO:H) films with high electron mobility and improved near-infrared (NIR) transparency have been applied as a transparent conducting oxide (TCO) electrode in substrate-type hydrogenated microcrystalline silicon (μc-Si:H) solar cells. The incorporation of IO:H, instead of conventional Sn-doped In 2 O 3 , improved the short-circuit current density (J sc ) and the resulting conversion efficiency. Optical analysis of the solar cells and TCO films revealed that the improvement in J sc is due to the improved spectral sensitivity in the visible and NIR wavelengths by reduction of absorption loss caused by free carriers in the TCO films.

  10. Preparation and characterization of polymer-derived amorphous silicon carbide with silicon-rich stoichiometry

    Energy Technology Data Exchange (ETDEWEB)

    Masuda, Takashi, E-mail: mtakashi@jaist.ac.jp [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Iwasaka, Akira [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Takagishi, Hideyuki [Faculty of Symbiotic System Science, Fukushima University, 1 Kanayagawa, Fukushima-shi, Fukushima 960-1296 (Japan); Shimoda, Tatsuya [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

    2016-08-01

    Polydihydrosilane with pendant hexyl groups was synthesized to obtain silicon-rich amorphous silicon carbide (a-SiC) films via the solution route. Unlike conventional polymeric precursors, this polymer requires neither catalysts nor oxidation for its synthesis and cross-linkage. Therefore, the polymer provides sufficient purity for the fabrication of semiconducting a-SiC. Here, we investigated the correlation of Si/C stoichiometry between the polymer and the resultant a-SiC film. The structural, optical, and electrical properties of the films with various carbon contents were also explored. Experimental results suggested that the excess carbon that did not participate in Si−C configurations was decomposed and was evaporated during polymer-to-SiC conversion. Consequently, the upper limit of the carbon in resultant a-SiC film was < 50 at.%; namely, the polymer provided silicon-rich a-SiC, whereas the conventionally used polycarbosilane inevitably provides carbon-rich one. These features of this unusual polymer open up a frontier of polymer-derived SiC and solution-processed SiC electronics. - Highlights: • Polymeric precursor solution for silicon carbide (SiC) is synthesized. • Semiconducting amorphous SiC is prepared via solution route. • The excess carbon is decomposed during cross-linking resulting in Si-rich SiC films. • The grown SiC films contain substantial amount of hydrogen atoms as SiH{sub n}/CH{sub n} entities. • Presence of CH{sub n} entities induces dangling bonds, causing poor electrical properties.

  11. Physicotechnical, spectroscopic and thermogravimetric properties of powdered cellulose and microcrystalline cellulose derived from groundnut shells

    Directory of Open Access Journals (Sweden)

    Chukwuemeka P. Azubuike

    2012-09-01

    Full Text Available α-Cellulose and microcrystalline cellulose powders, derived from agricultural waste products, that have for the pharmaceutical industry, desirable physical (flow properties were investigated. α–Cellulose (GCN was extracted from groundnut shell (an agricultural waste product using a non-dissolving method based on inorganic reagents. Modification of this α -cellulose was carried out by partially hydrolysing it with 2N hydrochloric acid under reflux to obtain microcrystalline cellulose (MCGN. The physical, spectroscopic and thermal properties of the derived α-cellulose and microcrystalline cellulose powders were compared with Avicel® PH 101, a commercial brand of microcrystalline cellulose (MCCA, using standard methods. X-ray diffraction and infrared spectroscopy analysis showed that the α-cellulose had lower crystallinity. This suggested that treatment with 2N hydrochloric acid led to an increase in the crystallinity index. Thermogravimetric analysis showed quite similar thermal behavior for all cellulose samples, although the α-cellulose had a somewhat lower stability. A comparison of the physical properties between the microcrystalline celluloses and the α-cellulose suggests that microcrystalline cellulose (MCGN and MCCA might have better flow properties. In almost all cases, MCGN and MCCA had similar characteristics. Since groundnut shells are agricultural waste products, its utilization as a source of microcrystalline cellulose might be a good low-cost alternative to the more expensive commercial brand.

  12. Supercritical fluid extraction of silicone oil from uranate microspheres prepared by sol-gel process

    International Nuclear Information System (INIS)

    Kumar, R.; Venkatakrishnan, R.; Sivaraman, N.; Srinivasan, T.G.; Vasudeva Rao, P.R.

    2005-01-01

    Supercritical fluid extraction of silicone oil from urania microspheres prepared through sol-gel route was investigated. The influence of pressure, temperature, and flow rate on the extraction efficiency was studied. Experimental conditions were optimised for the complete removal of silicone oil from urania microspheres. (author)

  13. Morphology-controlled electrodeposition of Cu2O microcrystalline particle films for application in photocatalysis under sunlight

    International Nuclear Information System (INIS)

    Wu, Guodong; Zhai, Wei; Sun, Fengqiang; Chen, Wei; Pan, Zizhao; Li, Weishan

    2012-01-01

    Graphical abstract: Display Omitted Highlights: ► PEG was used to electro-deposit Cu 2 O microcrystalline particle films. ► Morphologies of Cu 2 O microcrystals could be controlled by the amount of PEG. ► The films showed regularly varied photocatalytic activities under sunlight. ► The films could be recycled and showed stable activities. -- Abstract: Morphology-controlled Cu 2 O microcrystalline particle films had been successfully electrodeposited on tin-doped indium oxide glass substrates in CuSO 4 solutions containing different amounts of polyethylene glycol (PEG) additives. With an increase of PEG, microcrystals gradually changed from irregular shapes to cubes, octahedrons, and spherical shapes. Sizes increasingly became smaller with an increase of PEG under the same deposition time. These films had been first used as recyclable photocatalysts and showed excellent and photocatalytic activities in photodegradation of methylene blue (MB) under sunlight. Activities were regularly varied relative to the morphologies of films controlled by the amount of PEG and could be further enhanced by adding a little amount of hydrogen peroxide in the MB solution. The method for controllable preparation of Cu 2 O microcrystals with photocatalytic activities was simple and inexpensive. The as-prepared particle films could also be used in photodegradation of many other pollutants under sunlight.

  14. Silicon transport in sputter-deposited tantalum layers grown under ion bombardment

    International Nuclear Information System (INIS)

    Gallais, P.; Hantzpergue, J.J.; Remy, J.C.; Roptin, D.

    1988-01-01

    Tantalum was sputter deposited on (111) Si substrate under low-energy ion bombardment in order to study the effects of the ion energy on the silicon transport into the Ta layer. The Si substrate was heated up to 500 0 C during growth. For ion energies up to 180 eV silicon is not transported into tantalum and the growth temperature has no effect. An ion bombardment energy of 280 eV enhances the transport of silicon throughout the tantalum layer. Growth temperatures up to 300 0 C have no effect on the silicon transport which is mainly enhanced by the ion bombardment. For growth temperatures between 300 and 500 0 C, the silicon transport is also enhanced by the thermal diffusion. The experimental depth distribution of silicon is similar to the theoretical depth distribution calculated for the case of an interdiffusion. The ion-enhanced process of silicon transport is characterized by an activation energy of 0.4 eV. Silicon into the layers as-grown at 500 0 C is in both states, amorphous silicide and microcrystalline cubic silicon

  15. Probing the phase composition of silicon films in situ by etch product detection

    International Nuclear Information System (INIS)

    Dingemans, G.; Donker, M. N. van den; Gordijn, A.; Kessels, W. M. M.; Sanden, M. C. M. van de

    2007-01-01

    Exploiting the higher etch probability for amorphous silicon relative to crystalline silicon, the transiently evolving phase composition of silicon films in the microcrystalline growth regime was probed in situ by monitoring the etch product (SiH 4 ) gas density during a short H 2 plasma treatment step. Etch product detection took place by the easy-to-implement techniques of optical emission spectroscopy and infrared absorption spectroscopy. The phase composition of the films was probed as a function of the SiH 4 concentration during deposition and as a function of the film thickness. The in situ results were corroborated by Raman spectroscopy and solar cell analysis

  16. Influence of Tableting on Enzymatic Activity of Papain along with Determination of Its Percolation Threshold with Microcrystalline Cellulose

    Science.gov (United States)

    Sharma, Manu; Sharma, Vinay; Majumdar, Dipak K.

    2014-01-01

    The binary mixture tablets of papain and microcrystalline cellulose (MCC), dicalcium phosphate dihydrate (DCP), carrageenan, tragacanth, and agar were prepared by direct compression. Carrageenan, tragacanth, and agar provided maximum protection to enzyme activity compared to MCC and DCP. However, stability studies indicated highest loss of enzyme activity with carrageenan, tragacanth, and agar. Therefore, compression behaviour of different binary mixtures of papain with MCC at different compaction pressures, that is, 40–280 MPa, was studied according to Heckel equation. The compressibility studies of binary mixtures indicated brittle behavior of papain. The application of percolation theory on the relationship between critical density as a function of enzyme activity and mixture composition revealed the presence of percolation threshold for binary mixture. Papain-MCC mixture composition showed significant percolation threshold at 18.48% (w/w) papain loading. Microcrystalline cellulose provided higher protection during stability study. However, higher concentrations of microcrystalline cellulose, probably as dominant particles, do not protect the enzyme with their plastic deformation. Below the percolation threshold, that is, 18.48% (w/w) papain amount in mixture with plastic excipient, activity loss increases strongly because of higher shearing forces during compaction due to system dominance of plastic particles. This mixture range should therefore be avoided to get robust formulation of papain. PMID:27350972

  17. Deposition of thin layers of boron nitrides and hydrogenated microcrystalline silicon assisted by high current direct current arc plasma; Deposition assistee par un plasma a arc a haut courant continu de couches minces de Nitrure de Bore et de Silicium microcristallin hydrogene

    Energy Technology Data Exchange (ETDEWEB)

    Franz, D. [Ecole Polytechnique Federale de Lausanne, Centre de Recherches en Physique des Plasmas (CRPP), CH-1015 Lausanne (Switzerland)

    1999-09-01

    In the frame of this thesis, a high current direct current arc (HCDCA) used for the industrial deposition of diamond, has been adapted to study the deposition of two types of coatings: a) boron nitride, whose cubic phase is similar to diamond, for tribological applications, b) hydrogenated microcrystalline silicon, for applications in the semiconductor fields (flat panel displays, solar cells,...). For the deposition of these coatings, the substrates were placed in the diffusion region of the arc. The substrate heating is mainly due to atomic species recombining on its surface. The deposition temperature, varying from 300 to 900 {sup o}C according to the films deposited, is determined by the substrate position, the arc power and the injected gas fluxes, without the use of any external heating or cooling system. Measurements performed on the arc plasma show that the electronic temperature is around 2 eV (23'000 K) while the gas temperature is lower than 5500 K. Typical electronic densities are in the range of 10{sup 12}-10{sup 1'}3 cm{sup -3}. For the deposition of boron nitride films, different boron precursors were used and a wide parameter range was investigated. The extreme difficulty of synthesising cubic boron nitride films by chemical vapour deposition (CVD) did not allow to stabilize the cubic phase of boron nitride in HCDCA. Coatings resulted in hexagonal or amorphous boron nitride with a chemical composition close to stoichiometric. The presence of hydrogen leads to the deposition of rough and porous films. Negative biasing of the samples, for positive ion bombardment, is commonly used to stabilize the cubic phase. In HCDCA and in our biasing range, only a densification of the films could be observed. A boron nitride deposition plasma study by infrared absorption spectroscopy in a capacitive radio frequency reactor has demonstrated the usefulness of this diagnostic for the understanding of the various chemical reactions which occur in this kind

  18. Effect of hydrogen on the microstructure of silicon carbide

    International Nuclear Information System (INIS)

    Fischman, G.S.

    1985-01-01

    The effect of hydrogenation on the microstructure of a pressureless sintered silicon carbide was studied. Samples which were annealed in a 40:60 mole % H 2 :Ar atmosphere at 1400 0 C for 50 hours were microstructurally compared with unannealed samples and samples that had been annealed in a similar manner but using an argon atmosphere. The results were also compared with microstructural results obtained from in situ studies using both hydrogen and argon atmospheres. These results were compared with a thermodynamic model which was constructed using a free energy minimization technique. The observed effects of hydrogenation were surface decarburization and amorphization throughout the silicon carbide material. Other observations include the thermally induced growth of microcrystalline silicon and accelerated amorphization around the silicon microcrystals in samples used in hydrogen in situ studies. An analysis of the microstructure of the reference material was also performed

  19. Studies on Hydrotreating Process of Microcrystalline Wax Produced from Marine Belayim Crude Oil

    International Nuclear Information System (INIS)

    EI Karashi, S.; Marawan, H.

    2004-01-01

    Abstract Microcrystalline wax was produced from solvent dewaxing process of vacuum residue raffinate produced from Marine Belayim origin. The untreated microcrystalline wax contains trace amounts of sulfur, oxygen, nitrogen and organometallic compounds as well as heavy aromatics which affect the properties of wax applications in pharmaceutical and technical fields . Microcrystalline wax hydrotreating process was studied using digital controlled unit and Ni O-MoO 3 / Al 2 O 3 catalyst, where operating parameters that controlled the efficiency of the hydrotreated wax were studied separately at different values including reactor temperature, reactor pressure, liquid hourly space velocity and hydrogen to hydrocarbon ratio . Hydrotreated microcrystalline wax at operating conditions (temperature 300 degree C, pressure 73 kg/cm 2 , LHS V 0.52 h-l and H 2 /HC ratio 266.6 Nm 3 /m 3 ) has the best quality to be used as food grade wax

  20. Light trapping with plasmonic back contacts in thin-film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Paetzold, Ulrich Wilhelm

    2013-02-08

    small potential for increasing the reflection at the back contact with dielectric interlayers of even lower refractive index, such as SiO{sub 2} and air, is demonstrated. The light-trapping effect of two types of plasmonic back contacts, which make use of large and efficiently scattering Ag nanostructures, is studied in thin-film silicon solar cell prototypes. The first type of plasmonic back contact applies non-ordered Ag nanostructures. The preparation, characterization and three-dimensional electromagnetic simulations of these back contacts with various distributions of non-ordered Ag nanostructures are presented. Measured reflectance spectra of the Ag back contacts with non-ordered nanostructures are correlated with reflectance spectra derived from three-dimensional electromagnetic simulations of isolated nanostructures on Ag back contacts. A microcrystalline silicon solar cell fabricated on one type of plasmonic Ag back contact with non-ordered Ag nanostructures shows a significantly enhanced plasmonic light trapping when compared with a flat solar cell. The second type of plasmonic back contact applies periodic arrangements of plasmonic Ag nanostructures in a square lattice at the surface of the Ag back contact. It is called a plasmonic reflection grating back contact. A particular advantage of this device is the control of the scattering angles via the diffraction orders of the grating while taking advantage of the efficient plasmon-induced light scattering at the Ag nanostructures. The plasmonic reflection grating back contacts are prepared with a nanoimprint process. The prototype microcrystalline silicon solar cells exhibit a very good light-trapping effect. Even in comparison with solar cells with a state-of-the-art random texture for light trapping, an enhanced light-trapping effect is demonstrated for a solar sell with a plasmonic reflection grating of optimized period. Based on electromagnetic simulations, the light-trapping effect is explained from the

  1. [A study of the properties of tablets from mixtures of two size degrees of alpha-lactose monohydrate and microcrystalline cellulose].

    Science.gov (United States)

    Muzíková, J

    2006-03-01

    The paper examines the strength and disintegration time of compacts from the mixtures of two types of Tablettosas. Tablettosa 70 and Tablettosa 100 with microcrystalline cellulose represented by Vivapur 102. The mixtures of dry binders were prepared in the ratios of 3:1, 1:1, and 1:3. The effect of two concentrations of the lubricant magnesium stearate on the strength and disintegration time of compacts was also examined. Tablet strength increased with higher representation of microcrystalline cellulose in the mixture, and decreased with higher stearate concentration. The compacts from the mixtures with Tablettosa 100 showed higher strength. Disintegration time was highest in the compacts with the largest perccintage of microcrystalline cellulose, and longer in the case of the mixtures with Tablettosa 100. Stearate did not exert a negative effect on disintegration time. In the mixtures of Tablettosas with Vivapur 102 in a ratio of 1:1, the effect of the model active ingredient acetylsalicylic acid on the above-mentioned properties of tablets was tested. acetylsalicylic acid produced a further decrease in the strength of compacts and shortened the disintegration time in more instances in the cased of the mixtures with Tahlettosa 100.

  2. Laser annealed HWCVD and PECVD thin silicon films. Electron field emission

    International Nuclear Information System (INIS)

    O'Neill, K.A.; Shaikh, M.Z.; Lyttle, G.; Anthony, S.; Fan, Y.C.; Persheyev, S.K.; Rose, M.J.

    2006-01-01

    Electron Field Emission (FE) properties of various laser annealed thin silicon films on different substrates were investigated. HWCVD microcrystalline and PECVD amorphous silicon films were irradiated with Nd : YAG and XeCl Excimer lasers at varying energy densities. Encouraging FE results were mainly from XeCl Excimer laser processed PECVD and HWCVD films on metal backplanes. FE measurements were complemented by the study of film surface morphology. Geometric field enhancement factors from surface measurements and Fowler-Nordheim Theory (FNT) were compared. FE properties of the films were also found to be particularly influenced by the backplane material

  3. Local photoconductivity of microcrystalline silicon thin films measured by conductive atomic force microscopy

    Czech Academy of Sciences Publication Activity Database

    Ledinský, Martin; Fejfar, Antonín; Vetushka, Aliaksi; Stuchlík, Jiří; Rezek, Bohuslav; Kočka, Jan

    2011-01-01

    Roč. 5, 10-11 (2011), s. 373-375 ISSN 1862-6254 R&D Projects: GA MŠk(CZ) LC06040; GA MŠk(CZ) MEB061012; GA AV ČR KAN400100701; GA MŠk LC510 EU Projects: European Commission(XE) 240826 - PolySiMode Institutional research plan: CEZ:AV0Z10100521 Keywords : amorphous silicon * nanocrystalline silicon * thin films * atomic force microscopy * photoconductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.218, year: 2011

  4. Preparation of copper and silicon/copper powders by a gas ...

    Indian Academy of Sciences (India)

    Pure and silicon-coated metal copper nano to submicron-sized powders were prepared by gas evaporation and condensation. This powder was synthesized by using an industrial electron accelerator, ELV-6, with Ar as the carrier gas. Vapour from the liquefied metal surface was transferred to the cold zone by the carrier ...

  5. Thin film silicon modules: contributions to low cost industrial production

    Energy Technology Data Exchange (ETDEWEB)

    Shah, A. [Universite de Neuchatel, Neuchatel (Switzerland)

    2005-07-01

    This final report for the Swiss Federal Office of Energy (SFOE) discusses the research work done during the two-year period 2003-04 at the Thin-Film Solar Cell Laboratory of the Institute of Microtechnology (IMT) at the University of Neuchatel in Switzerland. The transition from fundamental research work to concrete industrialisation issues, and changes within the research staff are discussed. The main results of the work done are presented, including basic techniques for the production of p-i-n solar cells on glass, new technologies for the deposition of n-i-p cells on low-cost flexible substrates and the optimisation of zinc oxide deposition methods. The key role played by substrate chemistry and roughness in the nucleation and growth of micro-crystalline silicon layers is looked at and diagnostic tools for the analysis of micro-crystalline solar cells are discussed.

  6. Substrate and p-layer effects on polymorphous silicon solar cells

    Directory of Open Access Journals (Sweden)

    Abolmasov S.N.

    2014-07-01

    Full Text Available The influence of textured transparent conducting oxide (TCO substrate and p-layer on the performance of single-junction hydrogenated polymorphous silicon (pm-Si:H solar cells has been addressed. Comparative studies were performed using p-i-n devices with identical i/n-layers and back reflectors fabricated on textured Asahi U-type fluorine-doped SnO2, low-pressure chemical vapor deposited (LPCVD boron-doped ZnO and sputtered/etched aluminum-doped ZnO substrates. The p-layers were hydrogenated amorphous silicon carbon and microcrystalline silicon oxide. As expected, the type of TCO and p-layer both have a great influence on the initial conversion efficiency of the solar cells. However they have no effect on the defect density of the pm-Si:H absorber layer.

  7. Amorphous silicon prepared from silane-hydrogen mixture

    International Nuclear Information System (INIS)

    Pietruszko, S.M.

    1982-09-01

    Amorphous silicon films prepared from a d.c. discharge of 10% SiH 4 - 90% H 2 mixture are found to have properties similar to those made from 100% SiH 4 . These films are found to be quite stable against prolonged light exposure. The effect of nitrogen on the properties of these films was investigated. It was found that instead of behaving as a classical donor, nitrogen introduces deep levels in the material. Field effect experiments on a-Si:H films at the bottom (film-substrate interface) and the top (film-vacuum interface) of the film are also reported. (author)

  8. Evaluation of tablet disintegrant properties of microcrystalline ...

    African Journals Online (AJOL)

    This study was aimed at exploring the application of microcrystalline cellulose from cassava fermentation waste as a disintegrant in the formulation of paracetamol tablets for immediate release. Alkali delignification of the dried cassava fermentation fibres, followed by bleaching and acid depolymerisation was employed in ...

  9. Adsorption of cationic amylopectin on microcrystalline cellulose.

    NARCIS (Netherlands)

    Steeg, van de H.G.M.; Keizer, de A.; Cohen Stuart, M.A.; Bijsterbosch, B.H.

    1993-01-01

    The effects of electrolyte concentration and pH on the adsorption of cationic amylopectin on microcrystalline cellulose were investigated. The adsorbed amount in the pseudo-plateau of the isotherm showed a maximum as a function of the electrolyte concentration. We compared the data with a recent

  10. The preparation method of solid boron solution in silicon carbide in the form of micro powder

    International Nuclear Information System (INIS)

    Pampuch, R.; Stobierski, L.; Lis, J.; Bialoskorski, J.; Ermer, E.

    1993-01-01

    The preparation method of solid boron solution in silicon carbide in the form of micro power has been worked out. The method consists in introducing mixture of boron, carbon and silicon and heating in the atmosphere of inert gas to the 1573 K

  11. EPR response of sucrose and microcrystalline cellulose to measure high doses of gamma radiation; Respuesta EPR de sacarosa y celulosa micro cristalina para medir altas dosis de radiacion gamma

    Energy Technology Data Exchange (ETDEWEB)

    Torijano, E.; Cruz, L.; Gutierrez, G.; Azorin, J.; Aguirre, F. [Universidad Autonoma Metropolitana, Unidad Iztapalapa, Av. San Rafael Atlixco 186, Col. Vicentina, 09340 Mexico D. F. (Mexico); Cruz Z, E., E-mail: eftc@xanum.uam.mx [UNAM, Instituto de Ciencias Nucleares, Circuito Exterior, Ciudad Universitaria, 04510 Mexico D. F. (Mexico)

    2015-10-15

    Solid dosimeters of sucrose and microcrystalline cellulose (Avicel Ph-102) were prepared, following the same process, in order to compare their EPR response against that of the l-alanine dosimeters considered as reference. All lots of dosimeters were irradiated with gamma radiation in Gamma beam irradiator with 8 kGy/h of the Nuclear Sciences Institute of UNAM. Doses ranged from 1 to 10 kGy respectively. We found that both the response of sucrose as microcrystalline cellulose were linear; however, the response intensity was, on average, twenty times more for sucrose. Comparing this against the EPR response of l-alanine in the range of doses, it was found that the response to sucrose is a third part; and microcrystalline cellulose is a sixtieth, approximately. The results agree with those found in the literature for sucrose, leaving open the possibility of investigating other dosage ranges for cellulose. (Author)

  12. Irradiation of electron with high energy induced micro-crystallization of amorphous silicon

    International Nuclear Information System (INIS)

    Zhong Yule; Huang Junkai; Liu Weiping; Li Jingna

    2001-01-01

    Amorphous silicon is amorphous alloy of Si-H. It is random network of silicon with some hydrogen. And its structure has many unstable bonds as weak bonds of Si-Si and distortion bonds of all kinds. The bonds was broken or was out of shape by light and electrical ageing. It induced increase of defective state that causes character of material going to bad. This drawback will be overcome after micro-crystallization of amorphous silicon. It was discovered that a-Si:H was micro-crystallized by irradiated of electrons with energy of 0.3-0.5 MeV, density of electronic beam of 1.3 x 10 19 cm -1 s -1 and irradiated time of 10-600 s. Size of grain is 10-20 nm. Thick of microcrystalline lager is 25-250 nm

  13. Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying

    Energy Technology Data Exchange (ETDEWEB)

    Joo, Jinmyoung [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Biomedical Engineering Research Center, Asan Institute for Life Sciences, Asan Medical Center, University of Ulsan College of Medicine, Seoul 05505 (Korea, Republic of); Defforge, Thomas; Gautier, Gael, E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [Universite Francois Rabelais de Tours, CNRS CEA, INSA-CVL, GREMAN UMR 7347, 37071 Tours Cedex 2 (France); Loni, Armando [pSiMedica Ltd., Malvern Hills Science Park, Geraldine Road, Malvern, Worcestershire WR14 3SZ (United Kingdom); Kim, Dokyoung; Sailor, Michael J., E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Li, Z. Y. [Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom); Canham, Leigh T., E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [pSiMedica Ltd., Malvern Hills Science Park, Geraldine Road, Malvern, Worcestershire WR14 3SZ (United Kingdom); Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom)

    2016-04-11

    The effect of supercritical drying (SCD) on the preparation of porous silicon (pSi) powders has been investigated in terms of photoluminescence (PL) efficiency. Since the pSi contains closely spaced and possibly interconnected Si nanocrystals (<5 nm), pore collapse and morphological changes within the nanocrystalline structure after common drying processes can affect PL efficiency. We report the highly beneficial effects of using SCD for preparation of photoluminescent pSi powders. Significantly higher surface areas and pore volumes have been realized by utilizing SCD (with CO{sub 2} solvent) instead of air-drying. Correspondingly, the pSi powders better retain the porous structure and the nano-sized silicon grains, thus minimizing the formation of non-radiative defects during liquid evaporation (air drying). The SCD process also minimizes capillary-stress induced contact of neighboring nanocrystals, resulting in lower exciton migration levels within the network. A significant enhancement of the PL quantum yield (>32% at room temperature) has been achieved, prompting the need for further detailed studies to establish the dominant causes of such an improvement.

  14. Optimization of extraction of microcrystalline cellulose from orange ...

    African Journals Online (AJOL)

    This study investigated the optimum processing conditions for obtaining the maximum yield of microcrystalline cellulose (MCC) powder from orange peel waste (OPW) by use of response surface methodology (RSM). Central composite design (CCD) was used to evaluate the optimum process conditions for producing MCC ...

  15. Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying

    International Nuclear Information System (INIS)

    Joo, Jinmyoung; Defforge, Thomas; Gautier, Gael; Loni, Armando; Kim, Dokyoung; Sailor, Michael J.; Li, Z. Y.; Canham, Leigh T.

    2016-01-01

    The effect of supercritical drying (SCD) on the preparation of porous silicon (pSi) powders has been investigated in terms of photoluminescence (PL) efficiency. Since the pSi contains closely spaced and possibly interconnected Si nanocrystals ( 32% at room temperature) has been achieved, prompting the need for further detailed studies to establish the dominant causes of such an improvement.

  16. Preparation And Characterization Of Silicon Carbide Foam By Using In-Situ Generated Polyurethane Foam

    Directory of Open Access Journals (Sweden)

    Shalini Saxena

    2015-08-01

    Full Text Available Abstract The open cell silicon carbide SiC foam was prepared using highly crosslinked hybrid organic- inorganic polymer resin matrix. As inorganic polymer polycarbosilane was taken and organic resin was taken as a mixture of epoxy resin and diisocyanates. The resultant highly crosslinked hybrid resin matrix on heating and subsequently on pyrolysis yielded open cell silicon carbide foam. The hybrid resin matrix was characterized by Fourier transform Infrared Spectroscopy FT-IR and thermal properties i.e. Thermogravimetric analysis TGA amp Differential Scanning Calorimetry DSC were also studied. The morphological studies of silicon carbide ceramic foam were carried out using X-ray Spectroscopy XRD amp Scanning Electron Microscopy SEM.

  17. FY 1999 research and development of technologies for commercialization of photovoltaic power generation systems. Development of technologies for fabrication of thin-film solar cells/materials and substrates (Development of technologies for fabrication of high-quality amorphous materials and substrates); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / zairyo kiban seizo gijutsu kaihatsu (kohinshitsu amorphous kei zairyo kiban no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The research and development project is implemented for the amorphous/microcrystalline solar cells with the thin microcrystalline silicon film as the i layer, and the FY 1999 results are reported. The fabrication technologies are investigated for the microcrystalline silicon solar cells of pin or nip structure by RF or VHF plasma CVD using SiH{sub 4} and H{sub 2} as the stock gases. The tests are conducted for evaluating characteristics of the thin microcrystalline silicon film, to investigate the effects of film-making pressure, power and hydrogen dilution rate on the characteristics at a constant film-making temperature of 180 degrees C. The researches on the fabrication technologies for the microcrystalline solar cell of pin structure confirm that use of VHF plasma CVD improves crystallinity, electrical and optical characteristics of the p-type thin microcrystalline silicon film. The researches on the fabrication technologies for the microcrystalline solar cell of nip structure covers transparent substrates, film-making speed of the p layer, power and substrates, and a conversion efficiency of 7.5% is realized by the solar cell formed on a texture substrate. (NEDO)

  18. Uniform-sized silicone oil microemulsions: preparation, investigation of stability and deposition on hair surface.

    Science.gov (United States)

    Nazir, Habiba; Lv, Piping; Wang, Lianyan; Lian, Guoping; Zhu, Shiping; Ma, Guanghui

    2011-12-01

    Emulsions are commonly used in foods, pharmaceuticals and home-personal-care products. For emulsion based products, it is highly desirable to control the droplet size distribution to improve storage stability, appearance and in-use property. We report preparation of uniform-sized silicone oil microemulsions with different droplets diameters (1.4-40.0 μm) using SPG membrane emulsification technique. These microemulsions were then added into model shampoos and conditioners to investigate the effects of size, uniformity, and storage stability on silicone oil deposition on hair surface. We observed much improved storage stability of uniform-sized microemulsions when the droplets diameter was ≤22.7 μm. The uniform-sized microemulsion of 40.0 μm was less stable but still more stable than non-uniform sized microemulsions prepared by conventional homogenizer. The results clearly indicated that uniform-sized droplets enhanced the deposition of silicone oil on hair and deposition increased with decreasing droplet size. Hair switches washed with small uniform-sized droplets had lower values of coefficient of friction compared with those washed with larger uniform and non-uniform droplets. Moreover the addition of alginate thickener in the shampoos and conditioners further enhanced the deposition of silicone oil on hair. The good correlation between silicone oil droplets stability, deposition on hair and resultant friction of hair support that droplet size and uniformity are important factors for controlling the stability and deposition property of emulsion based products such as shampoo and conditioner. Copyright © 2011 Elsevier Inc. All rights reserved.

  19. Iron Oxide Nanoparticles Employed as Seeds for the Induction of Microcrystalline Diamond Synthesis

    Directory of Open Access Journals (Sweden)

    Resto Oscar

    2008-01-01

    Full Text Available AbstractIron nanoparticles were employed to induce the synthesis of diamond on molybdenum, silicon, and quartz substrates. Diamond films were grown using conventional conditions for diamond synthesis by hot filament chemical vapor deposition, except that dispersed iron oxide nanoparticles replaced the seeding. X-ray diffraction, visible, and ultraviolet Raman Spectroscopy, energy-filtered transmission electron microscopy , electron energy-loss spectroscopy, and X-ray photoelectron spectroscopy (XPS were employed to study the carbon bonding nature of the films and to analyze the carbon clustering around the seed nanoparticles leading to diamond synthesis. The results indicate that iron oxide nanoparticles lose the O atoms, becoming thus active C traps that induce the formation of a dense region of trigonally and tetrahedrally bonded carbon around them with the ensuing precipitation of diamond-type bonds that develop into microcrystalline diamond films under chemical vapor deposition conditions. This approach to diamond induction can be combined with dip pen nanolithography for the selective deposition of diamond and diamond patterning while avoiding surface damage associated to diamond-seeding methods.

  20. Preparation and characterisation of immobilised humic acid on silicon wafer

    International Nuclear Information System (INIS)

    Szabo, Gy.; Guczi, J.; Telegdi, J.; Pashalidis, I.; Szymczak, W.; Buckau, G.

    2005-01-01

    Full text of publication follows: The chemistry of the interactions of radionuclides with humic acid needs to be understood in details so that humate-mediated migration of radionuclides through the environment can be predicted. To achieve such a data in microscopic scale, several detective techniques, such as atomic force microscopy (AFM), chemical force microscopy (CFM), nuclear microprobe analysis (NMA) and X-ray photoelectron spectroscopy (XPS) can be used to measure intermolecular forces and to visualize the surface morphology. The main aim of this work was to provide humic material with specific properties in order to study with different spectroscopic techniques, the complexation behaviour of surface bound humic acid in microscopic scale. Namely, humic acid has been immobilised on silicon wafers in order to mimic surface bound humic substances in natural aquatic systems. In this communication, we present a simple protocol to immobilize humic acid on silicon wafer surface. A tri-functional silane reagent 3-amino-propyl-tri-methoxy-silane (APTES) was used to modify the surface of silicon wafers and appeared to be able to strongly attached soluble humic acid through their carboxylic groups to solid support. Characterisation of the surfaces, after any preparation steps, was done by ATR-FTIR, AFM and TOF-SIMS. These methods have proved that the humic acid forms a relatively homogeneous layer on the wafers. Immobilisation of humic acid on silicon wafer was further proved by binding isotherm of Am/Nd. (authors)

  1. Spherical composite particles of rice starch and microcrystalline cellulose: a new coprocessed excipient for direct compression.

    Science.gov (United States)

    Limwong, Vasinee; Sutanthavibul, Narueporn; Kulvanich, Poj

    2004-03-12

    Composite particles of rice starch (RS) and microcrystalline cellulose were fabricated by spray-drying technique to be used as a directly compressible excipient. Two size fractions of microcrystalline cellulose, sieved (MCS) and jet milled (MCJ), having volumetric mean diameter (D50) of 13.61 and 40.51 microm, respectively, were used to form composite particles with RS in various mixing ratios. The composite particles produced were evaluated for their powder and compression properties. Although an increase in the microcrystalline cellulose proportion imparted greater compressibility of the composite particles, the shape of the particles was typically less spherical with rougher surface resulting in a decrease in the degree of flowability. Compressibility of composite particles made from different size fractions of microcrystalline cellulose was not different; however, using MCJ, which had a particle size range close to the size of RS (D50 = 13.57 microm), provided more spherical particles than using MCS. Spherical composite particles between RS and MCJ in the ratio of 7:3 (RS-MCJ-73) were then evaluated for powder properties and compressibility in comparison with some marketed directly compressible diluents. Compressibility of RS-MCJ-73 was greater than commercial spray-dried RS (Eratab), coprocessed lactose and microcrystalline cellulose (Cellactose), and agglomerated lactose (Tablettose), but, as expected, lower than microcrystalline cellulose (Vivapur 101). Flowability index of RS-MCJ-73 appeared to be slightly lower than Eratab but higher than Vivapur 101, Cellactose, and Tablettose. Tablets of RS-MCJ-73 exhibited low friability and good self-disintegrating property. It was concluded that these developed composite particles could be introduced as a new coprocessed direct compression excipient.

  2. Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

    Directory of Open Access Journals (Sweden)

    Taweewat Krajangsang

    2014-01-01

    Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

  3. Modification of inkjet printer for polymer sensitive layer preparation on silicon-based gas sensors

    Directory of Open Access Journals (Sweden)

    Tianjian Li

    2015-04-01

    Full Text Available Inkjet printing is a versatile, low cost deposition technology with the capabilities for the localized deposition of high precision, patterned deposition in a programmable way, and the parallel deposition of a variety of materials. This paper demonstrates a new method of modifying the consumer inkjet printer to prepare polymer-sensitive layers on silicon wafer for gas sensor applications. A special printing tray for the modified inkjet printer to support a 4-inch silicon wafer is designed. The positioning accuracy of the deposition system is tested, based on the newly modified printer. The experimental data show that the positioning errors in the horizontal direction are negligibly small, while the positioning errors in the vertical direction rise with the increase of the printing distance of the wafer. The method for making suitable ink to be deposited to form the polymer-sensitive layer is also discussed. In the testing, a solution of 0.1 wt% polyvinyl alcohol (PVA was used as ink to prepare a sensitive layer with certain dimensions at a specific location on the surface of the silicon wafer, and the results prove the feasibility of the methods presented in this article.

  4. Recent Advances in Photoelectrochemical Applications of Silicon Materials for Solar-to-Chemicals Conversion.

    Science.gov (United States)

    Zhang, Doudou; Shi, Jingying; Zi, Wei; Wang, Pengpeng; Liu, Shengzhong Frank

    2017-11-23

    Photoelectrochemical (PEC) technology for the conversion of solar energy into chemicals requires cost-effective photoelectrodes to efficiently and stably drive anodic and/or cathodic half-reactions to complete the overall reactions for storing solar energy in chemical bonds. The shared properties among semiconducting photoelectrodes and photovoltaic (PV) materials are light absorption, charge separation, and charge transfer. Earth-abundant silicon materials have been widely applied in the PV industry, and have demonstrated their efficiency as alternative photoabsorbers for photoelectrodes. Many efforts have been made to fabricate silicon photoelectrodes with enhanced performance, and significant progress has been achieved in recent years. Herein, recent developments in crystalline and thin-film silicon-based photoelectrodes (including amorphous, microcrystalline, and nanocrystalline silicon) immersed in aqueous solution for PEC hydrogen production from water splitting are summarized, as well as applications in PEC CO 2 reduction and PEC regeneration of discharged species in redox flow batteries. Silicon is an ideal material for the cost-effective production of solar chemicals through PEC methods. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Review of New Technology for Preparing Crystalline Silicon Solar Cell Materials by Metallurgical Method

    Science.gov (United States)

    Li, Man; Dai, Yongnian; Ma, Wenhui; Yang, Bin; Chu, Qingmei

    2017-11-01

    The goals of greatly reducing the photovoltaic power cost and making it less than that of thermal power to realize photovoltaic power grid parity without state subsidies are focused on in this paper. The research status, key technologies and development of the new technology for preparing crystalline silicon solar cell materials by metallurgical method at home and abroad are reviewed. The important effects of impurities and defects in crystalline silicon on its properties are analysed. The importance of new technology on reducing production costs and improving its quality to increase the cell conversion efficiency are emphasized. The previous research results show that the raw materials of crystalline silicon are extremely abundant. The product of crystalline silicon can meet the quality requirements of solar cell materials: Si ≥ 6 N, P 1 Ω cm, minority carrier life > 25 μs cell conversion efficiency of about 19.3%, the product costs energy consumption energy consumption, low carbon and sustainable development are prospected.

  6. Photovoltaic characterization of graphene/silicon Schottky junctions from local and macroscopic perspectives

    Czech Academy of Sciences Publication Activity Database

    Hájková, Zdeňka; Ledinský, Martin; Vetushka, Aliaksi; Stuchlík, Jiří; Müller, Martin; Fejfar, Antonín; Bouša, Milan; Kalbáč, Martin; Frank, Otakar

    2017-01-01

    Roč. 676, May (2017), s. 82-88 ISSN 0009-2614 R&D Projects: GA ČR GA14-15357S Institutional support: RVO:68378271 ; RVO:61388955 Keywords : CVD graphene * microcrystalline silicon * solar cells * Schottky junctions * current-voltage curves * C-AFM Subject RIV: BM - Solid Matter Physics ; Magnetism; CG - Electrochemistry (UFCH-W) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) (UFCH-W) Impact factor: 1.815, year: 2016

  7. Physical and structural properties of polyaniline/microcrystalline cellulose nanocomposite

    Science.gov (United States)

    Abdi, Mahnaz M.; Liyana, Rawaida; Tahir, Paridah Md; Heng, Lee Yook; Sulaiman, Yusran; Waheeda, Nur Farhana; Hassan, Nabihah Abu

    2017-12-01

    A composite of Polyaniline/Microcrystalline Cellulose (PAni/MCC) was prepared via a chemical polymerization method in the presence of ammonium persulfate (NH4)2S2O8 as oxidant and cetyltrimethylammonium bromide (CTAB) as a cationic surfactant. The results of FESEM showed that the morphology of nanocomposite depends on the monomer concentration. Wire-like and porous nanostructure was observed for PAni/MCC/CTAB composite that could be suitable for enzyme immobilization and sensor applications. The electrochemical properties of the composites were studied using Cyclic Voltammetry (CV) and it was shown that PAni/MCC/CTAB composite generated a higher current response compared to the pure PAni. The synergy effect of MCC and CTAB on the physical and electrochemical properties of composite resulted in higher electron transferring in PAni/MCC/CTAB. The presence of significant peaks of PAni and MCC in FT-IR spectrum of nanocomposite indicating polymerization of aniline on the surface of MCC. Characteristic peaks of crystalline cellulose were observed at 22.8 and 14.7 2theta in XRD pattern.

  8. Grating-assisted coupling to nanophotonic circuits in microcrystalline diamond thin films

    Directory of Open Access Journals (Sweden)

    Patrik Rath

    2013-05-01

    Full Text Available Synthetic diamond films can be prepared on a waferscale by using chemical vapour deposition (CVD on suitable substrates such as silicon or silicon dioxide. While such films find a wealth of applications in thermal management, in X-ray and terahertz window design, and in gyrotron tubes and microwave transmission lines, their use for nanoscale optical components remains largely unexplored. Here we demonstrate that CVD diamond provides a high-quality template for realizing nanophotonic integrated optical circuits. Using efficient grating coupling devices prepared from partially etched diamond thin films, we investigate millimetre-sized optical circuits and achieve single-mode waveguiding at telecoms wavelengths. Our results pave the way towards broadband optical applications for sensing in harsh environments and visible photonic devices.

  9. The preparation by extrusion/spheronization and the properties of pellets containing drugs, microcrystalline cellulose and glyceryl monostearate.

    Science.gov (United States)

    Chatchawalsaisin, Jittima; Podczeck, Fridrun; Newton, J Michael

    2005-01-01

    Pellets have been prepared by extrusion and spheronization containing microcrystalline cellulose (MCC) and four model drugs with decreasing order of solubility, paracetamol (P), diclofenac sodium (D), ibuprofen (IB) and indomethacin (IN) at a 10% level with and without the addition of a range of levels of glyceryl monostearate (GMS). The drugs differed in their response to extrusion in that all formulations containing the drug D had a 'steady state' extrusion profile whereas the other three drugs exhibited 'forced flow' indicating the possibility of water migration during the process of ram extrusion. The presence of GMS did not influence this effect. The drug D also required consistently less water to function than the other three drugs. In spite of these differences in extrusion performance, it was possible to prepare satisfactory pellets from formulations of all the drugs with 0, 30 and 60% GMS combined with 90, 60 or 30% of MCC at a range of water levels. It was also possible to prepare pellets containing the drug D with 70, 80 and 90% GMS, with corresponding quantities of 20, 10 and 0% of MCC. It was also possible to prepare the pellet formulations by dispersing the drugs in molten GMS, grinding and processing this with MCC and water. Such systems retained the processing characteristics of the composition made by the blending of the powder. The presence of GMS in all cases reduced the quantity of water required for the process to function. The steady state or the mean of the range of the forces observed during forced flow, were dependent on the composition and the quantity of water added. The surface of the extrudate appeared smooth and measurements of surface roughness established that the value of the rugosity R(a) for any of the extrudates did not exceed 6 microm. The extrudate diameter was found to increase with the quantity of GMS in the formulation. The pellets produced were all within a relatively narrow size range (three sieve fractions of a root two

  10. Preparation of composite micro/nano structure on the silicon surface by reactive ion etching: Enhanced anti-reflective and hydrophobic properties

    Science.gov (United States)

    Zeng, Yu; Fan, Xiaoli; Chen, Jiajia; He, Siyu; Yi, Zao; Ye, Xin; Yi, Yougen

    2018-05-01

    A silicon substrate with micro-pyramid structure (black silicon) is prepared by wet chemical etching and then subjected to reactive ion etching (RIE) in the mixed gas condition of SF6, CHF3 and He. We systematically study the impacts of flow rates of SF6, CHF3 and He, the etching pressure and the etching time on the surface morphology and reflectivity through various characterizations. Meanwhile, we explore and obtain the optimal combination of parameters for the preparation of composite structure that match the RIE process based on the basis of micro-pyramid silicon substrate. The composite sample prepared under the optimum parameters exhibits excellent anti-reflective performance, hydrophobic, self-cleaning and anti-corrosive properties. Based on the above characteristics, the composite micro/nano structure can be applied to solar cells, photodetectors, LEDs, outdoor devices and other important fields.

  11. Iron oxide shell coating on nano silicon prepared from the sand for lithium-ion battery application

    Science.gov (United States)

    Furquan, Mohammad; Vijayalakshmi, S.; Mitra, Sagar

    2018-05-01

    Elemental silicon, due to its high specific capacity (4200 mAh g-1) and non-toxicity is expected to be an attractive anode material for Li-ion battery. But its huge expansion volume (> 300 %) during charging of battery, leads to pulverization and cracking in the silicon particles and causes sudden failure of the Li-ion battery. In this work, we have designed yolk-shell type morphology of silicon, prepared from carbon coated silicon nanoparticles soaked in aqueous solution of ferric nitrate and potassium hydroxide. The soaked silicon particles were dried and finally calcined at 800 °C for 30 minutes. The product obtained is deprived of carbon and has a kind of yolk-shell morphology of nano silicon with iron oxide coating (Si@Iron oxide). This material has been tested for half-cell lithium-ion battery configuration. The discharge capacity is found to be ≈ 600 mAh g-1 at a current rate of 1.0 A g-1 for 200 cycles. It has shown a stable performance as anode for Li-ion battery application.

  12. Preparation and spectral properties of europium hydrogen squarate microcrystals

    Science.gov (United States)

    Kolev, T.; Danchova, N.; Shandurkov, D.; Gutzov, S.

    2018-04-01

    A simple scheme for preparation of europium hydrogen squarate octahydrate microcrystals, Eu(HSq)3·8H2O is demonstrated. The microcrystalline powders obtained have a potential application as non-centrosymmetric and UV radiation - protective hybrid optical material. The site-symmetry of the Eu - ion is C2V or lower, obtained from diffuse reflectance spectra. The formation of europium hydrogen squarate is supported by IR - spectroscopy, UV-vis spectroscopy, chemical analysis and X-ray diffraction. A detailed analysis of the UV-vis and IR spectra of the micropowders prepared is presented. The reaction between europium oxide and squaric acid leads to formation of microcrystalline plate-like crystals of europium hydrogen squarate Eu(HSq)3·8H2O, a non-centrosymmetric hybrid optical material with a potential application as UV radiation - protective coatings.

  13. Gold Nanostructures for Surface-Enhanced Raman Spectroscopy, Prepared by Electrodeposition in Porous Silicon

    Directory of Open Access Journals (Sweden)

    Yukio H. Ogata

    2011-04-01

    Full Text Available Electrodeposition of gold into porous silicon was investigated. In the present study, porous silicon with ~100 nm in pore diameter, so-called medium-sized pores, was used as template electrode for gold electrodeposition. The growth behavior of gold deposits was studied by scanning electron microscope observation of the gold deposited porous silicon. Gold nanorod arrays with different rod lengths were prepared, and their surface-enhanced Raman scattering properties were investigated. We found that the absorption peak due to the surface plasmon resonance can be tuned by changing the length of the nanorods. The optimum length of the gold nanorods was ~600 nm for surface-enhanced Raman spectroscopy using a He-Ne laser. The reason why the optimum length of the gold nanorods was 600 nm was discussed by considering the relationship between the absorption peak of surface plasmon resonance and the wavelength of the incident laser for Raman scattering.

  14. A convenient way of manufacturing silicon nanotubes on a silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Changchang; Cheng, Heming; Liu, Xiang, E-mail: liuxiang@ahut.edu.cn

    2016-07-01

    A convenient approach of preparing silicon nanotubes (SiNTs) on a silicon substrate is described in this work in detail. Firstly, a porous silicon (PSi) slice is prepared by a galvanic displacement reaction. Then it is put into aqueous solutions of 20% (w%) ammonium fluoride and 2.5 mM cobalt nitrate for a predetermined time. The cobalt ions are reduced and the resulted cobalt particles are deposited on the PSi slice. After the cobalt particles are removed with 5 M nitric acid a plenty of SiNTs come out and exhibit disorderly on the silicon substrate, which are illustrated by scanning electron microscopy (SEM). The compositions of the SiNTs are examined by energy-dispersive X-ray spectroscopy. Based on the SEM images, a suggested mechanism is put forward to explain the generation of the SiNTs on the PSi substrate. - Highlights: • A facile approach of preparing silicon nano tubes was invented. • The experimental results demonstrated the strong reducibility of Si-H{sub x} species. • It provided a new way of manufacturing silicon-contained hybrids.

  15. Metal induced crystallization of silicon germanium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gjukic, M.

    2007-05-15

    In the framework of this thesis the applicability of the aluminium-induced layer exchange on binary silicon germanium alloys was studied. It is here for the first time shown that polycrstalline silicon-germanium layers can be fabricated over the whole composition range by the aluminium-induced layer exchange. The experimental results prove thet the resulting material exhibits a polycrystalline character with typocal grain sizes of 10-100 {mu}m. Raman measurements confirm that the structural properties of the resulting layers are because of the large crystallites more comparable with monocrystalline than with nano- or microcrystalline silicon-germanium. The alloy ratio of the polycrystalline layer correspondes to the chemical composition of the amorphous starting layer. The polycrystalline silicon-germanium layers possess in the range of the interband transitions a reflection spectrum, as it is otherwise only known from monocrystalline reference layers. The improvement of the absorption in the photovoltaically relevant spectral range aimed by the application of silicon-germanium could be also proved by absorption measurments. Strongly correlated with the structural properties of the polycrystalline layers and the electronic band structure resulting from this are beside the optical properties also the electrical properties of the material, especially the charge-carrier mobility and the doping concentration. For binary silicon-germanium layers the hole concentration of about 2 x 10{sup 18} cm{sup -3} for pure silicon increrases to about 5 x 10{sup 20} cm{sub -3} for pure germanium. Temperature-resolved measurements were applied in order to detect doping levels respectively semiconductor-metal transitions. In the last part of the thesis the hydrogen passivation of polycrystalline thin silicon-germanium layers, which were fabricated by means of aluminium-induced layer exchange, is treated.

  16. Investigation and optimization of series connection of thin-film silicon solar modules; Untersuchung und Optimierung der Serienverschaltung von Silizium-Duennschicht-Solarmodulen

    Energy Technology Data Exchange (ETDEWEB)

    Haas, Stefan

    2010-07-01

    The integrated series connection is an important and elementary part of a thin-film silicon solar module. The series connection leads to a reduction of Ohmic losses and an increase of the module voltage. After their deposition the different functional layers of a solar module must be patterned selectively to form a series connection. First the front contact, then the absorber, and finally the back contact is locally removed. The first step and the last step are needed to separate the contact layers (isolation step), the absorber patterning is used to expose the front contact and prepare the series interconnection. Usually laser ablation is used for patterning. The patterning of the front contact is overall a noncritical step. Therefore, this thesis exclusively investigates mechanisms that limit the process window of the absorber patterning and the back contact patterning. Especially for the absorber patterning on SnO{sub 2}-substrates the process window is very narrow. As too high pulse energies create a barrier layer on the SnO{sub 2}-window layer, which restricts the current flow in a series connected module. This barrier layer probably consists of SiO{sub 2} or an alloy of (Sn,Si)O{sub 2}. It arrises from redeposition of evaporated silicon. Ablation of the absorber without creating a barrier layer is only possible, when the silicon is not evaporated. Here the ablation is induced by the explosive out-diffusion of hydrogen from the silicon layer. On ZnO-substrates no significant barrier formation occurs. For this reason the process window is very broad. Patterning the back contact is the last isolation step. It is mainly restricted by an unavoidable deterioration of the absorber as well as a possible ablation of the window layer. The deterioration of the absorber in the vicinity of the patterning groove leads to parasitic dark currents for amorphous and for microcrystalline solar cells. The parasitic dark currents decrease the efficiency {eta} of a patterned

  17. Some historical remarks on microcrystalline arthritis (gout and chondrocalcinosis

    Directory of Open Access Journals (Sweden)

    G. Pasero

    2012-01-01

    Full Text Available The history of microcrystalline arthritis only began in 1961 when Daniel McCarty and Joseph Lee Hollander demonstrated the presence of sodium monourate crystals in the synovial fluid of gouty patients. However, gout is a historical disease, thanks to the descriptions of Hippocrates, Caelius Aurelianus, Soranus of Ephesus and Araeteus of Cappadocia. The relationship between hyperuricemia and gout was first documented in the nineteenth century by Alfred Baring Garrod, who demonstrated deposits of uric acid crystals on a linen thread held dipped in acidified blood (the so-called “thread method”. Gout has always been considered a prerogative of the moneyed classes (arthritis divitum, and history is full of famous gouty personalities, including kings, emperors, popes, commanders, politicians, artists, writers, philosophers and scientists. Another form of microcrystalline arthritis, chondrocalcinosis, was identified as being a rheumatic disorder different from gout in the 1960s. As a specific clinical entity, it was first identified in 1958 by Dušan Žitnˇan and Štefan Sit’aj in a few Slovak families.

  18. Preparation, Characterization, and Cationic Functionalization of Cellulose-Based Aerogels for Wastewater Clarification

    Directory of Open Access Journals (Sweden)

    Yang Hu

    2016-01-01

    Full Text Available Aerogels are a series of materials with porous structure and light weight which can be applied to many industrial divisions as insulators, sensors, absorbents, and cushions. In this study, cellulose-based aerogels (aerocelluloses were prepared from cellulosic material (microcrystalline cellulose in sodium hydroxide/water solvent system followed by supercritical drying operation. The average specific surface area of aerocelluloses was 124 m2/g. The nitrogen gas (N2 adsorption/desorption isotherms revealed type H1 hysteresis loops for aerocelluloses, suggesting that aerocelluloses may possess a porous structure with cylindrically shaped pores open on both ends. FTIR and XRD analyses showed that the crystallinity of aerocelluloses was significantly decreased as compared to microcrystalline cellulose and that aerocelluloses exhibited a crystalline structure of cellulose II as compared to microcrystalline cellulose (cellulose I. To perform cationic functionalization, a cationic agent, (3-chloro-2-hydroxypropyl trimethylammonium chloride, was used to introduce positively charged sites on aerocelluloses. The cationized aerocelluloses exhibited a strong ability to remove anionic dyes from wastewater. Highly porous and low cost aerocelluloses prepared in this study would be also promising as a fast absorbent for environmental pollutants.

  19. Synthesis and luminescence properties of YVO4:Eu3+ cobblestone - like microcrystalline phosphors obtained from the mixed solvent - thermal method

    International Nuclear Information System (INIS)

    Xiao Xiuzhen; Lu Guanzhong; Shen Shaodian; Mao Dongsen; Guo Yun; Wang Yanqin

    2011-01-01

    The mixed solvent-thermal method has been developed for the synthesis of YVO 4 :Eu 3+ luminescent materials in the N, N-dimethylformamide (DMF)/ de-ionized water (DIW) solution. The samples have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electronic microscope (TEM), UV/vis absorption and photoluminescence spectroscopies. The results demonstrate that we have obtained the uniform YVO 4 :Eu 3+ cobblestone - like microcrystalline phosphors in the mixed solution of DMF and DIW, which are different to the as-obtained YVO 4 :Eu 3+ nanoparticles in pure DIW. And the as - prepared YVO 4 :Eu 3+ microcrystalline particles are composed of numerous nanoparticles. The assembling phenomenon of the nanoparticles is strongly affected by the pH value of the solution and the volume ratio of DMF/DIW. Under UV excitation, the samples can emit the bright red light. While, the photoluminescence (PL) intensities of YVO 4 :Eu 3+ show some difference for samples obtained under the different reaction conditions. This is because that different microstructures of samples result in different combinative abilities between the surface and the adsorbed species so as to produce the different quenching abilities to the emission from Eu 3+ ions.

  20. Preparation of Mica and Silicon Substrates for DNA Origami Analysis and Experimentation

    Science.gov (United States)

    Pillers, Michelle A.; Shute, Rebecca; Farchone, Adam; Linder, Keenan P.; Doerfler, Rose; Gavin, Corey; Goss, Valerie; Lieberman, Marya

    2015-01-01

    The designed nature and controlled, one-pot synthesis of DNA origami provides exciting opportunities in many fields, particularly nanoelectronics. Many of these applications require interaction with and adhesion of DNA nanostructures to a substrate. Due to its atomically flat and easily cleaned nature, mica has been the substrate of choice for DNA origami experiments. However, the practical applications of mica are relatively limited compared to those of semiconductor substrates. For this reason, a straightforward, stable, and repeatable process for DNA origami adhesion on derivatized silicon oxide is presented here. To promote the adhesion of DNA nanostructures to silicon oxide surface, a self-assembled monolayer of 3-aminopropyltriethoxysilane (APTES) is deposited from an aqueous solution that is compatible with many photoresists. The substrate must be cleaned of all organic and metal contaminants using Radio Corporation of America (RCA) cleaning processes and the native oxide layer must be etched to ensure a flat, functionalizable surface. Cleanrooms are equipped with facilities for silicon cleaning, however many components of DNA origami buffers and solutions are often not allowed in them due to contamination concerns. This manuscript describes the set-up and protocol for in-lab, small-scale silicon cleaning for researchers who do not have access to a cleanroom or would like to incorporate processes that could cause contamination of a cleanroom CMOS clean bench. Additionally, variables for regulating coverage are discussed and how to recognize and avoid common sample preparation problems is described. PMID:26274888

  1. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  2. Multiple acquisition of magic angle spinning solid-state NMR experiments using one receiver: Application to microcrystalline and membrane protein preparations

    Science.gov (United States)

    Gopinath, T.; Veglia, Gianluigi

    2015-04-01

    Solid-state NMR spectroscopy of proteins is a notoriously low-throughput technique. Relatively low-sensitivity and poor resolution of protein samples require long acquisition times for multidimensional NMR experiments. To speed up data acquisition, we developed a family of experiments called Polarization Optimized Experiments (POE), in which we utilized the orphan spin operators that are discarded in classical multidimensional NMR experiments, recovering them to allow simultaneous acquisition of multiple 2D and 3D experiments, all while using conventional probes with spectrometers equipped with one receiver. POE allow the concatenation of multiple 2D or 3D pulse sequences into a single experiment, thus potentially combining all of the aforementioned advances, boosting the capability of ssNMR spectrometers at least two-fold without the addition of any hardware. In this perspective, we describe the first generation of POE, such as dual acquisition MAS (or DUMAS) methods, and then illustrate the evolution of these experiments into MEIOSIS, a method that enables the simultaneous acquisition of multiple 2D and 3D spectra. Using these new pulse schemes for the solid-state NMR investigation of biopolymers makes it possible to obtain sequential resonance assignments, as well as distance restraints, in about half the experimental time. While designed for acquisition of heteronuclei, these new experiments can be easily implemented for proton detection and coupled with other recent advancements, such as dynamic nuclear polarization (DNP), to improve signal to noise. Finally, we illustrate the application of these methods to microcrystalline protein preparations as well as single and multi-span membrane proteins reconstituted in lipid membranes.

  3. Shape Modification and Size Classification of Microcrystalline Graphite Powder as Anode Material for Lithium-Ion Batteries

    Science.gov (United States)

    Wang, Cong; Gai, Guosheng; Yang, Yufen

    2018-03-01

    Natural microcrystalline graphite (MCG) composed of many crystallites is a promising new anode material for lithium-ion batteries (LiBs) and has received considerable attention from researchers. MCG with narrow particle size distribution and high sphericity exhibits excellent electrochemical performance. A nonaddition process to prepare natural MCG as a high-performance LiB anode material is described. First, raw MCG was broken into smaller particles using a pulverization system. Then, the particles were modified into near-spherical shape using a particle shape modification system. Finally, the particle size distribution was narrowed using a centrifugal rotor classification system. The products with uniform hemispherical shape and narrow size distribution had mean particle size of approximately 9 μm, 10 μm, 15 μm, and 20 μm. Additionally, the innovative pilot experimental process increased the product yield of the raw material. Finally, the electrochemical performance of the prepared MCG was tested, revealing high reversible capacity and good cyclability.

  4. Two-component self-assembly with solvent leading to "wet" and microcrystalline organogel fibers.

    Science.gov (United States)

    Löfman, Miika; Lahtinen, Manu; Rissanen, Kari; Sievänen, Elina

    2015-01-15

    The microcrystalline fibers of N-(2-aminoethyl)-3α-hydroxy-5β-cholan-24-amide 1 provided a useful model system for studying the complex relationship between morphology, experimental parameters, solvent, and the phenomenon of organogelation. The presence of solvents in the solid forms of 1 along with crystallization behavior suggested solvate formation and polymorphic behavior. Forty solid state- and xerogel samples of 1 formed in organic solvents and in three categories of experimental conditions were analyzed with single crystal X-ray diffraction (XRD), powder X-ray diffraction (PXRD), Raman microscopy, and attenuated total reflection Fourier-transform infrared spectroscopy (ATR FTIR). Two polymorphs and four isostructural aromatic solvates of 1 were found among some unknown forms in the samples. Single crystal X-ray structures of one polymorph and bromobenzene solvate were obtained, the latter from a xerogel. Multiple crystal forms could be present in a sample, and their contributions to gelation were estimated taking the experimental conditions into account. Gelator 1 could act as a variable component gelator, either alone or in combination with an aromatic solvent. The research brings new insight into the structures of microcrystalline organogel fibers, linking solvate/inclusion crystal formation with microcrystalline fibers of an organogelator for the first time. Copyright © 2014 Elsevier Inc. All rights reserved.

  5. Properties of amorphous and microcrystalline superconductors

    International Nuclear Information System (INIS)

    Johnson, W.L.; Poon, S.J.

    1975-01-01

    Results of x-ray diffraction, electrical resistivity, critical field(H/sub c2/) and transport measurements are presented and discussed for bulk amorphous and microcrystalline transition metal alloys (Au--La, Nb--Rh, Nb--Ni--Rh, and Pd--Zr) obtained by liquid quenching. The transition temperature of the alloys is in the range 1.5 to 4.7 0 K. The J/sub c/--H/sub c2/--T/sub c/ relations are rather simple for this class of material and are compared with the theories of type II superconductors. The high resistance of bulk metallic glass to radiation damage might render them suitable for magnetic field applications in high radiation environments

  6. Preparation and Reaction Chemistry of Novel Silicon-Substituted 1,3-Dienes

    Directory of Open Access Journals (Sweden)

    Partha P. Choudhury

    2015-09-01

    Full Text Available 2-Silicon-substituted 1,3-dienes containing non transferrable groups known to promote transmetallation were prepared by Grignard chemistry and enyne metathesis. These dienes participated in one pot metathesis/Diels-Alder reactions in regio- and diastereoselective fashions. Electron-rich alkenes showed the fastest rates in metathesis reactions, and ethylene, a commonly used metathesis promoter slowed enyne metathesis. 2-Pyridyldimethylsilyl and 2-thienyldimethylsilyl substituted Diels-Alder cycloadducts participated in cross-coupling chemistry and the 2-thienyldimethylsilyl substituted cycloadducts underwent cross-coupling under very mild reaction conditions.

  7. Production of Starch Based Bioplastic from Cassava Peel Reinforced with Microcrystalline Celllulose Avicel PH101 Using Sorbitol as Plasticizer

    Science.gov (United States)

    Maulida; Siagian, M.; Tarigan, P.

    2016-04-01

    The production of starch based bioplastics from cassava peel reeinforced with microcrystalline cellulose using sorbitol as plasticizer were investigated. Physical properties of bioplastics were determined by density, water uptake, tensile strength and Fourier Transform Infrared Spectroscopy. Bioplastics were prepared from cassava peel starch plasticized using sorbitol with variation of 20; 25; 30% (wt/v of sorbitol to starch) reinforced with microcrystalline celllulose (MCC) Avicel PH101 fillers with range of 0 to 6% (wt/wt of MCC to starch). The results showed improvement in tensile strength with higher MCC content up to 9, 12 mpa compared to non-reinforced bioplastics. This could be mainly attributed to the strong hydrogen bonds between MCC and starch. On the contrary, the addition of MCC decreased the elongation at break, density and water uptake. Fourier Transform Infrared Spectroscopy showed the functional groups of bioplastics, which the majority of O-H groups were found at the bioplastics with reinforcing filler MCC that represented substantial hydrogen bonds. The highest tensile strength value was obtained for bioplastic with MCC content 6% and sorbitol content 20%. With good adhesion between MCC and starch the production of bioplastics could be widely used as a substitute for conventional plastics with more benefits to the environment.

  8. Production of Starch Based Bioplastic from Cassava Peel Reinforced with Microcrystalline Celllulose Avicel PH101 Using Sorbitol as Plasticizer

    International Nuclear Information System (INIS)

    Maulida; Siagian, M; Tarigan, P

    2016-01-01

    The production of starch based bioplastics from cassava peel reeinforced with microcrystalline cellulose using sorbitol as plasticizer were investigated. Physical properties of bioplastics were determined by density, water uptake, tensile strength and Fourier Transform Infrared Spectroscopy. Bioplastics were prepared from cassava peel starch plasticized using sorbitol with variation of 20; 25; 30% (wt/v of sorbitol to starch) reinforced with microcrystalline celllulose (MCC) Avicel PH101 fillers with range of 0 to 6% (wt/wt of MCC to starch). The results showed improvement in tensile strength with higher MCC content up to 9, 12 mpa compared to non-reinforced bioplastics. This could be mainly attributed to the strong hydrogen bonds between MCC and starch. On the contrary, the addition of MCC decreased the elongation at break, density and water uptake. Fourier Transform Infrared Spectroscopy showed the functional groups of bioplastics, which the majority of O-H groups were found at the bioplastics with reinforcing filler MCC that represented substantial hydrogen bonds. The highest tensile strength value was obtained for bioplastic with MCC content 6% and sorbitol content 20%. With good adhesion between MCC and starch the production of bioplastics could be widely used as a substitute for conventional plastics with more benefits to the environment. (paper)

  9. An improved method for preparing silicon carbide

    International Nuclear Information System (INIS)

    Baney, R.H.

    1980-01-01

    A desired shape is formed from a polysilane and the shape is heated in an inert atmosphere or under vacuum to 1150 to 1600 0 C until the polysilane is converted to silicon carbide. The polysilane contains from 0 to 60 mole percent of (CH 3 ) 2 Si units and from 40 to 100 mole percent of CH 3 Si units. The remaining bonds on silicon are attached to another silicon atom or to a chlorine or bromine atom, such that the polysilane contains from 10 to 43 weight percent of hydrolyzable chlorine or from 21 to 63 weight percent of hydrolyzable bromine. (author)

  10. Optimisation of the composition and production of mannitol/microcrystalline cellulose tablets

    NARCIS (Netherlands)

    Westerhuis, J.A; de Haan, P; Zwinkels, J; Jansen, W.T; Coenegracht, P.M J; Lerk, C.F

    1996-01-01

    Mixtures of mannitol and microcrystalline cellulose (MCC) were investigated on a small-production scale by granulation in a high-shear mixer and compression into tablets. For both excipients only a few cases of incompatibilities with active ingredients are known. Tablets with only MCC as the filler

  11. Physical properties of P and B doped microcrystalline SI:H deposited by PECVD

    International Nuclear Information System (INIS)

    Rubino, A.; Addonizio, M.L.; Conte, G.; Nobile, G.; Terzini, E.

    1993-01-01

    Boron and phosphorus doped high conductivity microcrystalline thin films were deposited in a PECVD reactor. This paper reports conductivities as high as 3 and 41 S/cm for B and P doped materials respectively on films deposited at 210 degrees C. The conductivity, as well as, the microcrystalline fraction increase for the n layer with decreasing RF power, while, for the p material, an increase of power is needed to improve the film characteristics. The conductivity prefactor, as well as, the conductivity itself as a function of the activation energy show a slope inversion for both n and p materials at an activation energy of about 40 meV and 80 meV respectively. Different possible transport mechanisms are examined in order to explain the experimental data

  12. A novel method of producing a microcrystalline beta-sitosterol suspension in oil

    DEFF Research Database (Denmark)

    Christiansen, Leena I; Rantanen, Jukka T; von Bonsdorff, Anna K

    2002-01-01

    This paper describes a novel method of producing a microcrystalline oral suspension containing beta-sitosterol in oil for the treatment of hypercholesterolaemia. beta-Sitosterol pseudopolymorphs with different water contents were crystallized from acetone and acetone-water solutions. Structural...

  13. High performance multilayered nano-crystalline silicon/silicon-oxide light-emitting diodes on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Darbari, S; Shahmohammadi, M; Mortazavi, M; Mohajerzadeh, S [Thin Film and Nano-Electronic Laboratory, School of ECE, University of Tehran, Tehran (Iran, Islamic Republic of); Abdi, Y [Nano-Physics Research Laboratory, Department of Physics, University of Tehran, Tehran (Iran, Islamic Republic of); Robertson, M; Morrison, T, E-mail: mohajer@ut.ac.ir [Department of Physics, Acadia University, Wolfville, NS (Canada)

    2011-09-16

    A low-temperature hydrogenation-assisted sequential deposition and crystallization technique is reported for the preparation of nano-scale silicon quantum dots suitable for light-emitting applications. Radio-frequency plasma-enhanced deposition was used to realize multiple layers of nano-crystalline silicon while reactive ion etching was employed to create nano-scale features. The physical characteristics of the films prepared using different plasma conditions were investigated using scanning electron microscopy, transmission electron microscopy, room temperature photoluminescence and infrared spectroscopy. The formation of multilayered structures improved the photon-emission properties as observed by photoluminescence and a thin layer of silicon oxy-nitride was then used for electrical isolation between adjacent silicon layers. The preparation of light-emitting diodes directly on glass substrates has been demonstrated and the electroluminescence spectrum has been measured.

  14. Triple-junction thin-film silicon solar cell fabricated on periodically textured substrate with a stabilized efficiency of 13.6%

    Science.gov (United States)

    Sai, Hitoshi; Matsui, Takuya; Koida, Takashi; Matsubara, Koji; Kondo, Michio; Sugiyama, Shuichiro; Katayama, Hirotaka; Takeuchi, Yoshiaki; Yoshida, Isao

    2015-05-01

    We report a high-efficiency triple-junction thin-film silicon solar cell fabricated with the so-called substrate configuration. It was verified whether the design criteria for developing single-junction microcrystalline silicon (μc-Si:H) solar cells are applicable to multijunction solar cells. Furthermore, a notably high short-circuit current density of 32.9 mA/cm2 was achieved in a single-junction μc-Si:H cell fabricated on a periodically textured substrate with a high-mobility front transparent contacting layer. These technologies were also combined into a-Si:H/μc-Si:H/μc-Si:H triple-junction cells, and a world record stabilized efficiency of 13.6% was achieved.

  15. Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

    International Nuclear Information System (INIS)

    Hamadeh, H; Naddaf, M; Jazmati, A

    2008-01-01

    Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

  16. Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

    Energy Technology Data Exchange (ETDEWEB)

    Hamadeh, H; Naddaf, M; Jazmati, A [Department of Physics, Atomic Energy Commission of Syria, PO Box 6091, Damascus (Syrian Arab Republic)], E-mail: Scientific8@aec.org.sy

    2008-12-21

    Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

  17. Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

    International Nuclear Information System (INIS)

    Hamadeh, H.; Naddaf, M.; Jazmati, A.

    2009-01-01

    Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase of its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS. (author)

  18. Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

    Science.gov (United States)

    Hamadeh, H.; Naddaf, M.; Jazmati, A.

    2008-12-01

    Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

  19. Charge transport properties in microcrystalline KDyFe(China)6

    International Nuclear Information System (INIS)

    Aubert, P.H.; Goubard, F.; Chevrot, C.; Tabuteau, A.

    2007-01-01

    Microcrystalline solid dysprosium(III) hexacyanoferrate(II) was synthesized by co-precipitation in aqueous solution. The resulting solid has been studied by Fourier transform infrared spectroscopy, X-ray analysis and solid state electrochemistry. The use of a cavity microelectrode was necessary to explore a wide range of time scale and minimize the (undesired) capacitive currents. Cyclic voltametric experiments were very helpful to understand the kinetic of charge transfer in such microstructure. A structure-properties relationship has been established from the crystallographic and the electrochemical properties. A square-scheme is presented to explain the unique electrochemical behavior of hexacyanoferrate containing dysprosium since this compound exhibits a second redox system. The solid presents an open channel-like morphology in which the motion of charged species occurs during the redox processes. Precisely, the electronic transfer is accompanied by a cation diffusion inside the microcrystalline structure. The size of these channels strongly suggests that the kinetic of charge transfer is limited by the cation transport into these structures. - Graphical abstract: Dy and Fe polyhedra packing in the cell of KDyFe(China) 6 .3.5H 2 O shows occluded water molecules and potassium ions forming a pseudohexagonal 2D sub-lattice connected to each other by diffusion channels

  20. Rapid solidification for preparation of high Tc superconductors

    International Nuclear Information System (INIS)

    Yavari, A.R.

    1988-01-01

    High Tc superconducting oxides are prepared in two different ways using rapid solidification: by oxidation of microcrystalline or amorphous tapes obtained by quenching the liquid alloy and via crystallisation of the amorphous oxide obtained by rapid quenching of the oxide melt. This technique is applied for the first time to the BiCaSrCuO family [fr

  1. Highly conducting p-type nanocrystalline silicon thin films preparation without additional hydrogen dilution

    Science.gov (United States)

    Patra, Chandralina; Das, Debajyoti

    2018-04-01

    Boron doped nanocrystalline silicon thin film has been successfully prepared at a low substrate temperature (250 °C) in planar inductively coupled RF (13.56 MHz) plasma CVD, without any additional hydrogen dilution. The effect of B2H6 flow rate on structural and electrical properties of the films has been studied. The p-type nc-Si:H films prepared at 5 ≤ B2H6 (sccm) ≤ 20 retains considerable amount of nanocrystallites (˜80 %) with high conductivity ˜101 S cm-1 and dominant crystallographic orientation which has been correlated with the associated increased ultra- nanocrystalline component in the network. Such properties together make the material significantly effective for utilization as p-type emitter layer in heterojunction nc-Si solar cells.

  2. Epitaxial growth of silicon for layer transfer

    Science.gov (United States)

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  3. Surface studies of microcrystalline chitosan/poly(vinyl alcohol) mixtures

    Energy Technology Data Exchange (ETDEWEB)

    Lewandowska, Katarzyna, E-mail: reol@chem.uni.torun.pl [Nicolaus Copernicus University, Faculty of Chemistry, Chair of Chemistry and Photochemistry of Polymers, 7 Gagarin Street, 87-100 Torun (Poland)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer The surface properties were investigated by AFM, SEM and FTIR. Black-Right-Pointing-Pointer The AFM images showed the lamellar structure of PVA in the blend. Black-Right-Pointing-Pointer SEM microscopy confirmed the existence of microphase separation of components. Black-Right-Pointing-Pointer FTIR analysis showed the existence of a weak interaction. - Abstract: In the present study, the surface properties of microcrystalline chitosan (MCCh), poly(vinyl alcohol) (PVA) and MCCh/PVA blends (made from acetic acid solutions with the MCCh concentration ranging from 20% to 80%) have been studied by the tapping-mode atomic force microscopy (AFM), scanning electron microscopy (SEM) and Fourier transform infrared (FTIR) spectroscopy. The changes of topography images are considered by determining the root mean square (RMS, R{sub q}) deviation in the image data. For PVA samples, the transition between adjacent lamellae occurs through holes, islands, and bicontinuous structures. The AFM images showed also the lamellar structure of PVA in the blend. The crystalline topography of MCCh/PVA film surface suggests the presence of PVA on the top surface. The FTIR spectra of film blends, in the amide I and II region of MCCh and the hydroxyl stretching bands of PVA have been analyzed. FTIR analysis showed the existence of a weak interaction of the hydroxyl or amino groups of microcrystalline chitosan with hydroxyl groups of PVA.

  4. Surface studies of microcrystalline chitosan/poly(vinyl alcohol) mixtures

    International Nuclear Information System (INIS)

    Lewandowska, Katarzyna

    2012-01-01

    Highlights: ► The surface properties were investigated by AFM, SEM and FTIR. ► The AFM images showed the lamellar structure of PVA in the blend. ► SEM microscopy confirmed the existence of microphase separation of components. ► FTIR analysis showed the existence of a weak interaction. - Abstract: In the present study, the surface properties of microcrystalline chitosan (MCCh), poly(vinyl alcohol) (PVA) and MCCh/PVA blends (made from acetic acid solutions with the MCCh concentration ranging from 20% to 80%) have been studied by the tapping-mode atomic force microscopy (AFM), scanning electron microscopy (SEM) and Fourier transform infrared (FTIR) spectroscopy. The changes of topography images are considered by determining the root mean square (RMS, R q ) deviation in the image data. For PVA samples, the transition between adjacent lamellae occurs through holes, islands, and bicontinuous structures. The AFM images showed also the lamellar structure of PVA in the blend. The crystalline topography of MCCh/PVA film surface suggests the presence of PVA on the top surface. The FTIR spectra of film blends, in the amide I and II region of MCCh and the hydroxyl stretching bands of PVA have been analyzed. FTIR analysis showed the existence of a weak interaction of the hydroxyl or amino groups of microcrystalline chitosan with hydroxyl groups of PVA.

  5. Preparation of silicon carbide-supported vanadium oxide and its application of removing NO by ammonia

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zi-Bo; Xu, Xu [Yangzhou University, College of Environmental Science and Engineering, Yangzhou, Jiangsu (China); Bai, Shu-Li [Wuyi University, College of Chemical and Environmental Engineering, Jiangmen, Guangdong (China); Guan, Yu-Jiang; Jiang, Sheng-Tao [Taizhou University, Environmental Engineering, Taizhou, Zhejiang (China)

    2017-03-15

    The aim of this work was to study the preparation of SiC-supported V{sub 2}O{sub 5} catalysts and the kinetics on selective catalytic reduction for NO with NH{sub 3} on the catalysts. Using incipient wetness impregnation methods, vanadium oxide was applied to silicon carbide to prepare a SiC-supported vanadium oxide. X-ray photoelectron spectroscopy analysis confirmed that V{sub 2}O{sub 5} existed in the prepared materials. Using the prepared materials as catalysts, selective catalytic reduction for NO by NH{sub 3} has been analyzed, and reaction kinetics on the catalysts was studied at 150-300 C. The obtained results showed that the reduction reaction on the catalysts is close to zero-order kinetics with respect to NH{sub 3}, first-order with respect to NO, and half-order to O{sub 2}. Apparent activation energy for the reduction reaction was found to be 38 kJ mol{sup -1}. The prepared materials are stable and reusable. (orig.)

  6. Porous silicon: Synthesis and optical properties

    International Nuclear Information System (INIS)

    Naddaf, M.; Awad, F.

    2006-01-01

    Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

  7. Porous silicon: Synthesis and optical properties

    International Nuclear Information System (INIS)

    Naddaf, M.; Awad, F.

    2006-06-01

    Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

  8. Electrical transport in transverse direction through silicon carbon alloy multilayers containing regular size silicon quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, Aparajita [Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India); Kole, Arindam, E-mail: erak@iacs.res.in [Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India); Dasgupta, Arup [Microscopy and Thermophysical Property Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Chaudhuri, Partha [Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

    2016-11-30

    Highlights: • Low temperature columnar growth of regular sized Si-quantum dots (Si-QDs) within a-SiC:H/μc-SiC:H multilayer structure by tuning the a-SiC:H layer thickness. • Thickness optimization of the a-SiC:H layers resulted in a sharp increase of the transverse current and a decrease of the trap concentrations. • The arrangements of the Si-QDs favor percolation paths for the transverse current. - Abstract: Electrical transport in the transverse direction has been studied through a series of hydrogenated silicon carbon alloy multilayers (SiC-MLs) deposited by plasma enhanced chemical vapor deposition method. Each SiC-ML consists of 30 cycles of the alternating layers of a nearly amorphous silicon carbide (a-SiC:H) and a microcrystalline silicon carbide (μc-SiC:H) that contains high density of silicon quantum dots (Si-QDs). A detailed investigation by cross sectional TEM reveals preferential growth of densely packed Si-QDs of regular sizes ∼4.8 nm in diameter in a vertically aligned columnar structure within the SiC-ML. More than six orders of magnitude increase in transverse current through the SiC-ML structure were observed for decrease in the a-SiC:H layer thickness from 13 nm to 2 nm. The electrical transport mechanism was established to be a combination of grain boundary or band tail hopping and Frenkel–Poole (F-P) type conduction depending on the temperature and externally applied voltage ranges. Evaluation of trap concentration within the multilayer structures from the fitted room temperature current voltage characteristics by F-P function shows reduction up-to two orders of magnitude indicating an improvement in the short range order in the a-SiC:H matrix for decrease in the thickness of a-SiC:H layer.

  9. Characterization of Polylactic Acid/ Microcrystalline Cellulose/ Montmorillonite Hybrid Composites

    International Nuclear Information System (INIS)

    Reza Arjmandi; Azman Hassan; Haafiz, M.K.M.; Zainoha Zakaria; Inuwa, I.M.

    2014-01-01

    The objective of this study is to investigate the effect of montmorillonite (MMT)/ microcrystalline cellulose (MCC) hybrid fillers on mechanical properties and morphological characteristics of polylactic acid (PLA) composites. PLA/ MMT nano composites and PLA/ MMT/ MCC hybrid composites were prepared by solution casting method. Morphology and tensile properties of PLA composites were investigated using Field emission scanning electron microscopy and Instron tensile testing machine. The maximum tensile strength of PLA/ MMT nano composites was obtained with 5 phr contents of MMT, which corresponding to 30.75 MPa. Based on optimized formulation of PLA/ MMT nano composites (5 phr MMT contents), various amounts of MCC (0 to 7 phr) were added into optimum formulation of PLA/ MMT in order to produce PLA/ MMT/ MCC hybrid composites. Fourier transform infrared spectroscopy revealed some level of interaction between PLA and both MMT and MCC in the hybrid composites. However, the percent elongation at break of the hybrid composites was generally higher than PLA/ MMT nano composites. Additionally, Young's modulus of the PLA/ MMT/ MCC hybrid composites increased gradually with increasing of MCC contents and was higher than PLA/ MMT at all compositions. The present results are the first among a series of experiments that have been designed in order to probe the effect of MMT and MCC in the PLA. (author)

  10. Glow discharge preparation and electrooptical characterisation of amorphous silicon alloys for solar cells. Preparacion por descarga luminiscente y caracterizacion electrooptica de aleaciones de silicio amorfo para celulas solares

    Energy Technology Data Exchange (ETDEWEB)

    Carabe, J

    1990-11-01

    A study is presented, focused on the preparation and characterisation of hydrogenated amorphous silicon alloy thin films for their application as p type window layers in pin silicon solar cells. The preparation technique used was radio frequency glow discharge. The samples were characterised optically (visible, near infrared and infrared absorption spectrophotometry) and electrically (dark and photoconductivities at ambient temperature and as functions of temperature). The influence of each of the preparation parameters on film properties has been systematically studied. The results have been analysed according to the existing models. Chapter 1 is an introduction to the material in question and its photovoltaic applications. Chapter 2 describes the experimental procedure used. Capter 3 shows and discusses the most relevant results obtained in the study of intrinsic amorphous silicon, p type amorphous silicon and p type amorphous silicon carbide window layers, with special emphasis on the influence of the use of an alternative dopant gas: boron trifluoride. Finally, chapter 4 summarises the most relevant conclusions drawn from this research work. (Author)

  11. Stressing effects on the charge trapping of silicon oxynitride prepared by thermal oxidation of LPCVD Si-rich silicon nitride

    International Nuclear Information System (INIS)

    Choi, H.Y.; Wong, H.; Filip, V.; Sen, B.; Kok, C.W.; Chan, M.; Poon, M.C.

    2006-01-01

    It was recently found that the silicon oxynitride prepared by oxidation of silicon-rich silicon nitride (SRN) has several important features. The high nitrogen and extremely low hydrogen content of this material allows it to have a high dielectric constant and a low trap density. The present work investigates in further detail the electrical reliability of this kind of gate dielectric films by studying the charge trapping and interface state generation induced by constant current stressing. Capacitance-voltage (C-V) measurements indicate that for oxidation temperatures of 850 and 950 deg. C, the interface trap generation is minimal because of the high nitrogen content at the interface. At a higher oxidation temperature of 1050 deg. C, a large flatband shift is found for constant current stressing. This observation can be explained by the significant reduction of the nitrogen content and the phase separation effect at this temperature as found by X-ray photoelectron spectroscopy study. In addition to the high nitrogen content, the Si atoms at the interface exist in the form of random bonding to oxygen and nitrogen atoms for samples oxidized at 850 and 950 deg. C. This structure reduces the interface bonding constraint and results in the low interface trap density. For heavily oxidized samples the trace amount of interface nitrogen atoms exist in the form of a highly constraint SiN 4 phase and the interface oxynitride layer is a random mixture of SiO 4 and SiN 4 phases, which consequently reduces the reliability against high energy electron stressing

  12. Preparation and characterization of flake graphite/silicon/carbon spherical composite as anode materials for lithium-ion batteries

    International Nuclear Information System (INIS)

    Lai Jun; Guo Huajun; Wang Zhixing; Li Xinhai; Zhang Xiaoping; Wu Feixiang; Yue Peng

    2012-01-01

    Highlights: ► Flake graphite/silicon/carbon composite is synthesized via spray drying. ► Flake graphite of ∼0.5 μm and glucose are used to prepare the composite. ► The as-prepared composite shows spherical and porous appearance. ► The composite shows nearly the same cycleability as commercial graphite in 20 cycles. ► The composite shows a reversible capacity of 552 mAh/g at the 20th cycle. - Abstract: Using nano-Si, glucose and flake graphite of ∼0.5 μm as raw materials, flake graphite/silicon/carbon composite is successfully synthesized via spray drying and subsequent pyrolysis. The samples are characterized by XRD, SEM, TEM and electrochemical measurements. The composite is composed of flake graphite, nano-Si and amorphous glucose-pyrolyzed carbon and presents good spherical appearance. Some micron pores arising from the decomposition of glucose exist on the surface of the composite particles. The composite has a high reversible capacity of 602.7 mAh/g with an initial coulombic efficiency of 69.71%, and shows nearly the same cycleability as the commercial graphite in 20 cycles. Both the glucose-pyrolyzed carbon and the micron pores play important roles in improving the cycleability of the composite. The flake graphite/silicon/carbon composite electrode is a potential alternative to graphite for high energy-density lithium ion batteries.

  13. Neural network: an instrument to study flow and packing properties of pharmaceutical powders

    OpenAIRE

    Mulas, Gilberto; Kachrimanis, K.; Gavini, Elisabetta; Giunchedi, Paolo; Malamataris, S.

    2006-01-01

    In the present study five brands of microcrystalline cellulose (Ph101, Vivapur, Ph 301, Emcocel and Prosolv), three brands of Crospovidone (XL, XL-10 and INF) and pregelatinized Starch were mixed with 2% w/w of Aerosil 200, Aerosil R972 (two different kinds of colloidal silicon dioxide) or Mg stearate, to obtain 27 distinct mixtures. Flow rate, bulk and tapped density of mixtures were measured and tablets were prepared.

  14. The influence of the electrical asymmetry effect on deposition uniformity of thin silicon film

    Energy Technology Data Exchange (ETDEWEB)

    Hrunski, D., E-mail: Dzmitry.Hrunski@leyboldoptics.com; Janssen, A.; Fritz, T.; Hegemann, T.; Clark, C.; Schreiber, U.; Grabosch, G.

    2013-04-01

    The deposition of amorphous and microcrystalline silicon is an important step in the production of thin silicon film solar panels. Deposition rate, layer uniformity and material quality are key attributes for achieving high efficiency in such panels. Due to the multilayer structure of tandem solar cells (more than 6 thin silicon layers), it is becoming increasingly important to improve the uniformity of deposition without sacrificing deposition rate and material quality. This paper reports the results of an investigation into the influence of the electrical asymmetry effect (EAE) on the uniformity of deposited layers. 13.56 MHz + 27.12 MHz excitation frequencies were used for thin silicon film deposition in a Gen5 reactor (1100 × 1400 mm). To change the plasma properties, the DC self bias voltage on the RF electrode was varied by adjustment of the phase angle between the two frequencies applied. It was found that the layers deposited by EAE method have better uniformity than layers deposited in single frequency 27.12 MHz discharge. The EAE provides additional opportunities for improvement of uniformity, deposition rate and material quality. - Highlights: ► The electrical asymmetry effect technique tested for thin silicon film deposition ► Bias voltage has an influence on film uniformity. ► Minimized the deterioration of layer uniformity while increasing discharge frequency.

  15. Pulsed Laser Deposition of Zinc Sulfide Thin Films on Silicon: The influence of substrate orientation and preparation on thin film morphology and texture

    OpenAIRE

    Heimdal, Carl Philip J

    2014-01-01

    The effect of orientation and preparation of silicon substrates on the growth morphology and crystalline structure of ZnS thin films deposited by pulsed laser deposition (PLD) has been investigated through scanning electron microscopy (SEM) and grazing incidence x-ray diffraction (GIXRD). ZnS thin films were grown on silicon (100) and (111), on HF-treated and untreated silicon (100) as well as substrates coated with Al, Ge and Au. The ZnS films showed entirely different morphologies for ZnS f...

  16. Impacts of Different Functional Groups on the Kinetic Rates of α-Amine Ketoximesilanes Hydrolysis in the Preparation of Room Temperature Vulcanized Silicone Rubber.

    Science.gov (United States)

    Xu, Huihui; Liu, Zihou; Liu, Qingyang; Bei, Yiling; Zhu, Qingzeng

    2018-05-13

    α-Amine ketoximesilanes are proven to be effective crosslinkers in the preparation of ketone-oxime one-component room temperature vulcanized (RTV) silicone rubber without the use of toxic metal catalyst. This work aimed to investigate the hydrolysis kinetic of α-amine ketoximesilanes, which is vitally important for the preparation of RTV silicone rubber. Five kinds of α-amine ketoximesilanes, namely α-(N,N-diethyl)aminomethyltri(methylethylketoxime)silane (DEMOS), α-(N,N-di-n-butyl)aminomethyltri(methylethylketoxime)silane (DBMOS), α-(N-n-butyl)aminomethyltri(methylethylketoxime)silane (n-BMOS), α-(N-cyclohexyl)aminomethyltri(methylethylketoxime)silane (CMOS) and α-(β-aminomethyl)aminomethyltri(methylethylketoxime)silane (AEMOS), were successfully obtained and confirmed using Fourier transform infrared spectrometer (FT-IR) and hydrogen-1 nuclear magnetic resonance ( ¹H NMR). Kinetics of hydrolysis reactions were measured by FT-IR and conductivity. Our results illustrated that the kinetic constant rates ranged from 12.2 × 10 −4 s −1 to 7.6 × 10 −4 s −1 , with the decreasing order of DEMOS > n-BMOS > DBMOS > CMOS > AEMOS at the given temperature and humidity. Better performances of thermal stability could be achieved when using the α-amine ketoximesilanes as crosslinkers in the preparation of RTV silicon rubber than that of RTV silicone rubber with the use of methyltri(methylethylketoxime)silane (MOS) as a crosslinker and organic tin as a catalyst.

  17. Microcrystalline diamond cylindrical resonators with quality-factor up to 0.5 million

    Energy Technology Data Exchange (ETDEWEB)

    Saito, Daisuke; Yang, Chen; Lin, Liwei [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States); Heidari, Amir [Department of Mechanical and Aerospace Engineering, University of California, Davis, California 95616 (United States); Najar, Hadi [Department of Electrical and Computer Engineering, University of California, Davis, California 95616 (United States); Horsley, David A. [Department of Mechanical and Aerospace Engineering, University of California, Davis, California 95616 (United States); Department of Electrical and Computer Engineering, University of California, Davis, California 95616 (United States)

    2016-02-01

    We demonstrate high quality-factor 1.5 mm diameter batch-fabricated microcrystalline diamond cylindrical resonators (CR) with quality-factors limited by thermoelastic damping (TED) and surface loss. Resonators were fabricated 2.6 and 5.3 μm thick in-situ boron-doped microcrystalline diamond films deposited using hot filament chemical vapor deposition. The quality-factor (Q) of as-fabricated CR's was found to increase with the resonator diameter and diamond thickness. Annealing the CRs at 700 °C in a nitrogen atmosphere led to a three-fold increase in Q, a result we attribute to thinning of the diamond layer via reaction with residual O{sub 2} in the annealing furnace. Post-anneal Q exceeding 0.5 million (528 000) was measured at the 19 kHz elliptical wineglass modes, producing a ring-down time of 8.9 s. A model for Q versus diamond thickness and resonance frequency is developed including the effects of TED and surface loss. Measured quality factors are shown to agree with the predictions of this model.

  18. Simultaneous solid phase extraction of cobalt, strontium and cesium from liquid radioactive waste using microcrystalline naphthalene

    International Nuclear Information System (INIS)

    Hamed, Mostafa Mohamed; Attallah, Mohamed Fathy; Metwally, Sayed Sayed

    2014-01-01

    Most of the procedures developed for the extraction of cobalt, strontium and cesium by solid phase extraction do not employ simultaneous extraction of them. In this study, rapid simultaneous removal of Co 2+ , Sr 2+ and Cs + on microcrystalline naphthalene as solid-phase extractant was investigated. These ions were allowed to form chelates with oxine and then adsorbed on freshly microcrystalline naphthalene from aqueous solutions. The solid phase extraction procedure (SPE) was optimized by using model solution containing Co 2+ , Sr 2+ and Cs + in batch system. The effects of different parameters such as variation in pH, reagent concentration, standing time, naphthalene solution concentration and contact time on the simultaneous removal of these ions was studied. The obtained results indicated that, sorption was found to be rapid, and the percentage removal of Co 2+ , Sr 2+ and Cs + was found to be 98, 79 and 68% within 10 min, respectively. The kinetics of the sorption process was investigated to understand the kinetic characteristics of sorption of metal chelates onto microcrystalline naphthalene. The developed procedure has been successfully applied to the removal and recovery of 60 Co and 134 Cs from liquid radioactive waste. The parameters can be used for designing a plant for treatment of wastewater economically.

  19. Properties of p-type amorphous silicon carbide window layers prepared using boron trifluoride

    Energy Technology Data Exchange (ETDEWEB)

    Gandia, J J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gutierrez, M T [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Carabe, J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain)

    1993-03-01

    One set (A) of undoped and three sets (B, C and D) of doped hydrogenated amorphous silicon carbide samples have been made in the framework of a research plan for obtaining high quality p-type window layers by radiofrequency glow discharge of silane-based gas mixtures. The samples of sets A and B were made using different RF-power-density to mass-flow ratios for various methane percentages in the gas mixture. The best carbon incorporation in the amorphous silicon lattice was obtained at the highest RF-power density. The properties of sets C and D, prepared using different RF-power densities and silane and methane proportions have been analysed as functions of the concentration of boron trifluoride with respect to silane. In both cases, the optical gap E[sub G], after a slight initial decrease, remains at a value of approximately 2.1 eV without quenching in the doping ranges covered. The best conductivity obtained is 2x10[sup -7] ([Omega] cm)[sup -1]. IR spectra allow to associate these features with the structural quality of the films. (orig.)

  20. Microcrystalline silicon growth by low laser energy crystallization on a plastic substrate

    International Nuclear Information System (INIS)

    Kim, D. Y.; Seo, C. K.; Shim, M. S.; Kim, C. H.; Yi, J.

    2004-01-01

    We are reporting the crystallization of amorphous silicon (a-Si) using a XeCl excimer laser treatment. Although polycarbonate (PC) plastic substrates are very weak at high temperatures of more than 150 .deg. C, they are very useful for applications to microelectronics because of light weight, high transmittance, and flexibility. In order to crystallize a-Si films on plastic substrates, we suggest that a CeO 2 seed layer will be very helpful at a low laser energy density. The seed layer is deposited at room temperature by rf using magnetron sputtering. A seed layer deposition method will be also presented in detail in this article. We compare a-Si crytallization without a seed layer with one with a seed layer deposited between the a-Si and the plastic substrate. The a-Si was deposited on the plastic substrate by using inductively coupled plasma Chemical-Vapor Deposition (ICPCVD) at the room temperature. In this paper, we will present the crystallization properties of a-Si with and without a CeO 2 seed layer on the plastic substrate.

  1. Optimization of plasma parameters for the production of silicon nano-crystals

    CERN Document Server

    Chaabane, N; Vach, H; Cabarrocas, P R I

    2003-01-01

    We use silane-hydrogen plasmas to synthesize silicon nano-crystals in the gas phase and thermophoresis to collect them onto a cooled substrate. To distinguish between nano-crystals formed in the plasma and those grown on the substrate, as a result of surface and subsurface reactions, we have simultaneously deposited films on a conventional substrate heated at 250 deg. C and on a second substrate cooled down to 90 deg. C. A series of samples deposited at various discharge pressures, in the range of 400 mTorr to 1.2 Torr, have been characterized by Raman spectroscopy and ellipsometry. At low pressure (400-500 mTorr), the films are amorphous on the cold substrate and micro-crystalline on the hot one. As pressure increases, gas phase reactions lead to the formation of nano-crystalline particles which are attracted by the cold substrate due to thermophoresis. Consequently, we obtain nano-crystalline silicon thin films on the cold substrate and amorphous thin films on the heated one in the pressure range of 600-900...

  2. Preparation and characterization of flake graphite/silicon/carbon spherical composite as anode materials for lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Lai Jun [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Guo Huajun, E-mail: Lai_jun_@126.com [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Wang Zhixing; Li Xinhai; Zhang Xiaoping; Wu Feixiang; Yue Peng [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China)

    2012-07-25

    Highlights: Black-Right-Pointing-Pointer Flake graphite/silicon/carbon composite is synthesized via spray drying. Black-Right-Pointing-Pointer Flake graphite of {approx}0.5 {mu}m and glucose are used to prepare the composite. Black-Right-Pointing-Pointer The as-prepared composite shows spherical and porous appearance. Black-Right-Pointing-Pointer The composite shows nearly the same cycleability as commercial graphite in 20 cycles. Black-Right-Pointing-Pointer The composite shows a reversible capacity of 552 mAh/g at the 20th cycle. - Abstract: Using nano-Si, glucose and flake graphite of {approx}0.5 {mu}m as raw materials, flake graphite/silicon/carbon composite is successfully synthesized via spray drying and subsequent pyrolysis. The samples are characterized by XRD, SEM, TEM and electrochemical measurements. The composite is composed of flake graphite, nano-Si and amorphous glucose-pyrolyzed carbon and presents good spherical appearance. Some micron pores arising from the decomposition of glucose exist on the surface of the composite particles. The composite has a high reversible capacity of 602.7 mAh/g with an initial coulombic efficiency of 69.71%, and shows nearly the same cycleability as the commercial graphite in 20 cycles. Both the glucose-pyrolyzed carbon and the micron pores play important roles in improving the cycleability of the composite. The flake graphite/silicon/carbon composite electrode is a potential alternative to graphite for high energy-density lithium ion batteries.

  3. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.

    Science.gov (United States)

    Ke, S Y; Yang, J; Qiu, F; Wang, Z Q; Wang, C; Yang, Y

    2015-11-06

    We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

  4. Preconcentration of uranium, thorium, zirconium, titanium, molybdenum and vanadium with oxine supported on microcrystalline naphthalene and their determinations by ICP-AES

    International Nuclear Information System (INIS)

    Kumar, Naveen; Kumar, Sanjay; Kumar, Vijay; Nandakishore, S.S.; Bangroo, P.N.

    2013-01-01

    As an effective technique for separation and preconcentration of trace elements, solid-liquid extraction with microcrystalline naphthalene has received great attention in recent years. The application of the adsorption of the metal complexes on microcrystalline naphthalene has greatly enhanced the utility of solid-liquid extraction in trace analysis. A survey of the literature revealed that single element detection techniques such as spectrophotometry, atomic absorption spectrometry, and polarography were mostly combined with this separation method. However, multi-element simultaneous detection techniques, like ICP-AES and ICP-MS were seldom used as the detectors in this solid-liquid extraction method. The aim of this work was to attempt to adopt the reagent oxine for the separation and subsequent determination of U, Th, Zr, Ti, Mo and V by ICP-AES, after adsorption of their oxinate complexes on microcrystalline naphthalene

  5. Investigation of the powder flow behaviour of binary mixtures of microcrystalline celluloses and paracetamol

    Directory of Open Access Journals (Sweden)

    Ira Soppela

    2010-03-01

    Full Text Available The flow behaviour of binary mixtures of paracetamol and different grades of microcrystalline celluloses (Avicel® PH101, PH102 and PH200 was studied using a new testing method. The effect of physical characteristics of the powder including tribocharging and the addition of lubricant on the flow properties of the different mixtures was investigated. As expected, the flowability of the samples was affected both by the amount of paracetamol and the physical properties of microcrystalline celluloses (MCC and the mixtures. The effect of lubricant varied depending on the MCC grade: magnesium stearate was able to improve the flowability of the mixtures containing PH102 and PH200 while it did not affect the flowability of PH101. Multivariate analysis showed that the flow of the binary excipient-drug mixtures through an orifice is affected by several phenomena, such as charging, surface moisture, carrier payload and particle size.

  6. Isolation and characterization of microcrystalline cellulose from roselle fibers.

    Science.gov (United States)

    Kian, Lau Kia; Jawaid, Mohammad; Ariffin, Hidayah; Alothman, Othman Y

    2017-10-01

    In this study, microcrystalline cellulose (MCC) was extracted from roselle fiber through acid hydrolysis treatment and its properties were compared with those of commercially available MCC. The physicochemical and morphological characteristics, elemental composition, size distribution, crystallinity and thermal properties of the obtained MCC were analyzed in this work. Fourier transform infrared spectroscopy (FTIR) analysis provided clear evidence that the characteristic peak of lignin was absent in the spectrum of the MCC prepared from roselle fiber. Rough surface and slight aggregation of MCC were observed by scanning electron microscopy (SEM). Energy dispersive X-ray (EDX) analysis showed that pure MCC with small quantities of residues and impurities was obtained, with a similar elemental composition to that of commercial MCC. A mean diameter of approximately 44.28μm was measured for MCC by using a particle size analyzer (PSA). X-ray diffraction (XRD) showed the crystallinity increased from 63% in roselle pulp to 78% in roselle MCC, the latter having a slightly higher crystallinity than that of commercial MCC (74%). TGA and DSC results indicated that the roselle MCC had better thermal stability than the roselle pulp, whereas it had poorer thermal stability in comparison with commercial MCC. Thus, the isolated MCC from roselle fibers will be going to use as reinforcing element in green composites and may be a precursor for future roselle derived nanocellulose, and thus a promising subject in nanocomposite research. Copyright © 2017 Elsevier B.V. All rights reserved.

  7. Water-Protein Hydrogen Exchange in the Micro-Crystalline Protein Crh as Observed by Solid State NMR Spectroscopy

    International Nuclear Information System (INIS)

    Boeckmann, Anja; Juy, Michel; Bettler, Emmanuel; Emsley, Lyndon; Galinier, Anne; Penin, Francois; Lesage, Anne

    2005-01-01

    We report site-resolved observation of hydrogen exchange in the micro-crystalline protein Crh. Our approach is based on the use of proton T 2 ' -selective 1 H- 13 C- 13 C correlation spectra for site-specific assignments of carbons nearby labile protein protons. We compare the proton T 2 ' selective scheme to frequency selective water observation in deuterated proteins, and discuss the impacts of deuteration on 13 C linewidths in Crh. We observe that in micro-crystalline proteins, solvent accessible hydroxyl and amino protons show comparable exchange rates with water protons as for proteins in solution, and that structural constraints, such as hydrogen bonding or solvent accessibility, more significantly reduce exchange rates

  8. 77 FR 25720 - Determination That GRIFULVIN V (Griseofulvin Microcrystalline) Tablets, 250 Milligrams, Was Not...

    Science.gov (United States)

    2012-05-01

    ... been discontinued from marketing for reasons other than safety or effectiveness. ANDAs that refer to... Sale for Reasons of Safety or Effectiveness AGENCY: Food and Drug Administration, HHS. ACTION: Notice... microcrystalline) tablets, 250 milligrams (mg), was not withdrawn from sale for reasons of safety or effectiveness...

  9. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  10. Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon

    International Nuclear Information System (INIS)

    Agocs, E.; Petrik, P.; Milita, S.; Vanzetti, L.; Gardelis, S.; Nassiopoulou, A.G.; Pucker, G.; Balboni, R.; Fried, M.

    2011-01-01

    We propose to analyze ellipsometry data by using effective medium approximation (EMA) models. Thanks to EMA, having nanocrystalline reference dielectric functions and generalized critical point (GCP) model the physical parameters of two series of samples containing silicon nanocrystals, i.e. silicon rich oxide (SRO) superlattices and porous silicon layers (PSL), have been determined. The superlattices, consisting of ten SRO/SiO 2 layer pairs, have been prepared using plasma enhanced chemical vapor deposition. The porous silicon layers have been prepared using short monopulses of anodization current in the transition regime between porous silicon formation and electropolishing, in a mixture of hydrofluoric acid and ethanol. The optical modeling of both structures is similar. The effective dielectric function of the layer is calculated by EMA using nanocrystalline components (nc-Si and GCP) in a dielectric matrix (SRO) or voids (PSL). We discuss the two major problems occurring when modeling such structures: (1) the modeling of the vertically non-uniform layer structures (including the interface properties like nanoroughness at the layer boundaries) and (2) the parameterization of the dielectric function of nanocrystals. We used several techniques to reduce the large number of fit parameters of the GCP models. The obtained results are in good agreement with those obtained by X-ray diffraction and electron microscopy. We investigated the correlation of the broadening parameter and characteristic EMA components with the nanocrystal size and the sample preparation conditions, such as the annealing temperatures of the SRO superlattices and the anodization current density of the porous silicon samples. We found that the broadening parameter is a sensitive measure of the nanocrystallinity of the samples, even in cases, where the nanocrystals are too small to be visible for X-ray scattering. Major processes like sintering, phase separation, and intermixing have been

  11. Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

    Science.gov (United States)

    Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

    1993-01-01

    Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

  12. Influence of preparation and storage conditions on photoluminescence of porous silicon powder with embedded Si nanocrystals

    International Nuclear Information System (INIS)

    Bychto, Leszek; Balaguer, Maria; Pastor, Ester; Chirvony, Vladimir; Matveeva, Eugenia

    2008-01-01

    The time changes of photoluminescence (PL) characteristics of porous silicon (porSi) powder during storing in different ambients have been reported. A porous silicon material with embedded Si nanocrystals of size of few nanometers was prepared by an electrochemical method from 10 to 20 Ωcm p-type Si wafers, and both constant and pulse current anodization regimes were used. A powder with a submicron average particle size was obtained by simple mechanical lift-off of the porous layer followed by additional manual milling. The air, hexane, and water as storage media were used, and modification by a nonionic surfactant (undecylenic acid) of the porSi surface was applied in the latter case. Dependence of PL characteristics on preparation and storage conditions was then studied. A remarkable blue shift of a position of PL maximum was observed in time for porSi powders in each storage media. In water suspension a many-fold build-up (10-30) of PL intensity in a time scale of few days was accompanied by an observed blue shift. Photoluminescence time behavior of porSi powders was described by a known mechanism of the change of porSi PL from free exciton emission of Si nanocrystals to luminescence of localized oxidized states on the Si nanocrystal surface.

  13. Influence of preparation and storage conditions on photoluminescence of porous silicon powder with embedded Si nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Bychto, Leszek, E-mail: leszek.bychto@tu.koszalin.pl; Balaguer, Maria; Pastor, Ester; Chirvony, Vladimir; Matveeva, Eugenia, E-mail: eumat@upvnet.upv.e [Technical University of Valencia, Nanophotonics Technology Center (Spain)

    2008-12-15

    The time changes of photoluminescence (PL) characteristics of porous silicon (porSi) powder during storing in different ambients have been reported. A porous silicon material with embedded Si nanocrystals of size of few nanometers was prepared by an electrochemical method from 10 to 20 {Omega}cm p-type Si wafers, and both constant and pulse current anodization regimes were used. A powder with a submicron average particle size was obtained by simple mechanical lift-off of the porous layer followed by additional manual milling. The air, hexane, and water as storage media were used, and modification by a nonionic surfactant (undecylenic acid) of the porSi surface was applied in the latter case. Dependence of PL characteristics on preparation and storage conditions was then studied. A remarkable blue shift of a position of PL maximum was observed in time for porSi powders in each storage media. In water suspension a many-fold build-up (10-30) of PL intensity in a time scale of few days was accompanied by an observed blue shift. Photoluminescence time behavior of porSi powders was described by a known mechanism of the change of porSi PL from free exciton emission of Si nanocrystals to luminescence of localized oxidized states on the Si nanocrystal surface.

  14. Influence of preparation and storage conditions on photoluminescence of porous silicon powder with embedded Si nanocrystals

    Science.gov (United States)

    Bychto, Leszek; Balaguer, Maria; Pastor, Ester; Chirvony, Vladimir; Matveeva, Eugenia

    2008-12-01

    The time changes of photoluminescence (PL) characteristics of porous silicon (porSi) powder during storing in different ambients have been reported. A porous silicon material with embedded Si nanocrystals of size of few nanometers was prepared by an electrochemical method from 10 to 20 Ωcm p-type Si wafers, and both constant and pulse current anodization regimes were used. A powder with a submicron average particle size was obtained by simple mechanical lift-off of the porous layer followed by additional manual milling. The air, hexane, and water as storage media were used, and modification by a nonionic surfactant (undecylenic acid) of the porSi surface was applied in the latter case. Dependence of PL characteristics on preparation and storage conditions was then studied. A remarkable blue shift of a position of PL maximum was observed in time for porSi powders in each storage media. In water suspension a many-fold build-up (10-30) of PL intensity in a time scale of few days was accompanied by an observed blue shift. Photoluminescence time behavior of porSi powders was described by a known mechanism of the change of porSi PL from free exciton emission of Si nanocrystals to luminescence of localized oxidized states on the Si nanocrystal surface.

  15. Evaluation of selected chemical processes for production of low-cost silicon phase 2. silicon material task, low-cost silicon solar array project

    Science.gov (United States)

    Blocher, J. M., Jr.; Browning, M. F.; Rose, E. E.; Thompson, W. B.; Schmitt, W. A.; Fippin, J. S.; Kidd, R. W.; Liu, C. Y.; Kerbler, P. S.; Ackley, W. R.

    1978-01-01

    Progress from October 1, 1977, through December 31, 1977, is reported in the design of the 50 MT/year experimental facility for the preparation of high purity silicon by the zinc vapor reduction of silicon tetrachloride in a fluidized bed of seed particles to form a free flowing granular product.

  16. Effect of the conditions of preparation on the properties of a cellulose exchanger containing salicylic acid as a functional group

    Energy Technology Data Exchange (ETDEWEB)

    Lieser, K H; Foerster, M; Burba, P [Technische Hochschule Darmstadt (Germany, F.R.). Fachbereich Anorganische Chemie und Kernchemie

    1977-04-01

    The preparation of a cellulose derivative containing salicylic acid as functional group was varied in order to find optimal conditions with respect to fast exchange as well as high capacity. Two kinds of cellulose (cross-linked and microcrystalline) and different reaction times were used. The properties of the products were investigated by titration curves to determine the capacity and by measuring the non-isotopic exchange Na/sup +//*Fe/sup 3 +/ and the isotopic exchange *Fe/sup 3 +//Fe/sup 3 +/ as a function of time. Microcrystalline cellulose and a reaction time of 15 min gave optimal results.

  17. Thermal Infrared Spectra of Microcrystalline Sedimentary Phases: Effects of Natural Surface Roughness on Spectral Feature Shape

    Science.gov (United States)

    Hardgrove, C.; Rogers, A. D.

    2012-03-01

    Thermal infrared spectral features of common microcrystalline phases (chert, alabaster, micrite) are presented. Spectra are sensitive to mineralogy and micron-scale (~1-25 µm) surface roughness. Roughness is on the scale of the average crystal size.

  18. The performance of silicon solar cells prepared by screen-printing technique

    International Nuclear Information System (INIS)

    Mursyidah; Mohamed Yahaya; Muhammad Mohd Salleh

    2000-01-01

    Screen-printing technique is known to produce low cost solar cells. A study has been done to prepare silicon solar cells of n + -p and n + -p-p + structures. The p-type silicon wafers were used as substrates. The phosphorous layer was deposited on top of the substrate using the screen-printing technique. The wafer was then annealed at temperature 1000 degree C for 10 minutes, so that phosphorous atoms are thermally diffused into the wafer to form an n + -p junction. Meanwhile the boron film was deposited at the back surface of the substrate and annealed at temperature 900 degree C for 10 minutes to form a p + layer in the n + -p-p + device. The back and front metal contacts were made using screen-printing technique. The performance of the devices was evaluated from I-V curves measured in the dark and under illumination. It was found that the n + -p-p + device with short circuit current, I SC = 32 mA, open circuit voltage, V OC = 0.46 volt, fill factor, FF=0.63 and efficiency, η = 2.3%, was better than that of the n + -p device. The performance of the n + -p-p + device was successfully improved by depositing titanium dioxide on top of the device as anti-reflection coating using the screen-printing technique. The improved performance was I SC = 38 mA, V OC = 0.48 volt, FF = 0.67 and η = 3. 1%. (Author)

  19. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    OpenAIRE

    Zahra Ostadmahmoodi Do; Tahereh Fanaei Sheikholeslami; Hassan Azarkish

    2016-01-01

    Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method fo...

  20. Applicability of low-melting-point microcrystalline wax to develop temperature-sensitive formulations.

    Science.gov (United States)

    Matsumoto, Kohei; Kimura, Shin-Ichiro; Iwao, Yasunori; Itai, Shigeru

    2017-10-30

    Low-melting-point substances are widely used to develop temperature-sensitive formulations. In this study, we focused on microcrystalline wax (MCW) as a low-melting-point substance. We evaluated the drug release behavior of wax matrix (WM) particles using various MCW under various temperature conditions. WM particles containing acetaminophen were prepared using a spray congealing technique. In the dissolution test at 37°C, WM particles containing low-melting-point MCWs whose melting was starting at approx. 40°C (Hi-Mic-1045 or 1070) released the drug initially followed by the release of only a small amount. On the other hand, in the dissolution test at 20 and 25°C for WM particles containing Hi-Mic-1045 and at 20, 25, and 30°C for that containing Hi-Mic-1070, both WM particles showed faster drug release than at 37°C. The characteristic drug release suppression of WM particles containing low-melting-point MCWs at 37°C was thought attributable to MCW melting, as evidenced by differential scanning calorimetry analysis and powder X-ray diffraction analysis. Taken together, low-melting-point MCWs may be applicable to develop implantable temperature-sensitive formulations that drug release is accelerated by cooling at administered site. Copyright © 2017 Elsevier B.V. All rights reserved.

  1. Crystallization of II-VI semiconductor compounds forming long microcrystalline linear assemblies

    Directory of Open Access Journals (Sweden)

    Marcelino Becerril

    2013-04-01

    Full Text Available In this work we report the formation of long microcrystalline linear self-assemblies observed during the thin film growth of several II-VI compounds. Polycrystalline CdTe, CdS, CdCO3, and nanocrystalline CdTe:Al thin films were prepared on glass substrates by different deposition techniques. In order to observe these crystalline formations in the polycrystalline materials, the thin film growth was suspended before the grains reached to form a continuous layer. The chains of semiconductor crystals were observed among many isolated and randomly distributed grains. Since CdTe, CdTe:Al, CdS and CdCO3 are not ferroelectric and/or ferromagnetic materials, the relevant problem would be to explain what is the mechanism through which the grains are held together to form linear chains. It is well known that some nanocrystalline materials form rods and wires by means of electrostatic forces. This occurs in polar semiconductors, where it is assumed that the attraction forces between surface polar faces of the small crystals are the responsible for the chains formation. Since there are not too many mechanisms responsible for the attraction we assume that a dipolar interaction is the force that originates the formation of chain-like grain clusters. The study of this property can be useful for the understanding of nucleation processes in the growth of semiconductor thin films.

  2. Hydrogen in amorphous silicon

    International Nuclear Information System (INIS)

    Peercy, P.S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

  3. Green synthesis of hybrid graphene oxide/microcrystalline cellulose aerogels and their use as superabsorbents

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Xiao; Huang, Ting; Yang, Jing-hui; Zhang, Nan; Wang, Yong, E-mail: yongwang1976@163.com; Zhou, Zuo-wan

    2017-08-05

    Highlights: • Hybrid GO/MCC aerogels were prepared using LiBr aqueous solution as the solvent. • GO was exfoliated by MCC through the strong interaction between them. • The adsorption ability of GO per unit mass in the hybrid aerogels was greatly enhanced. - Abstract: In this work, we developed a green synthesis method to prepare the hybrid aerogels containing graphene oxide (GO) and microcrystalline cellulose (MCC) using lithium bromide (LiBr) aqueous solution as the solvent, which insured the complete dissolution of MCC. The interaction between GO and MCC was investigated through different methods The results demonstrate that there is a strong interaction between GO and MCC molecules, which promotes the exfoliation of GO in the hybrid aerogels. The hybrid GO/MCC aerogels exhibit typical three dimensional porous structure and the pore morphology can be well adjusted by changing the content of GO. The adsorption ability of the hybrid aerogels was measured using methylene blue (MB) as an adsorbate. The results show that the adsorption ability of GO per unit mass is greatly enhanced compared with the pure GO aerogel, especially at relatively low GO content the adsorption amount of GO per unit mass is enhanced up to 2630 mg/g. Further results demonstrate that the hybrid GO/MCC aerogels still obey the pseudo-second-order adsorption model, which is similar to that of the pure GO aerogel. The mechanism for the amplified adsorption ability of GO in the hybrid GO/MCC aerogels is then analyzed.

  4. Green synthesis of hybrid graphene oxide/microcrystalline cellulose aerogels and their use as superabsorbents

    International Nuclear Information System (INIS)

    Wei, Xiao; Huang, Ting; Yang, Jing-hui; Zhang, Nan; Wang, Yong; Zhou, Zuo-wan

    2017-01-01

    Highlights: • Hybrid GO/MCC aerogels were prepared using LiBr aqueous solution as the solvent. • GO was exfoliated by MCC through the strong interaction between them. • The adsorption ability of GO per unit mass in the hybrid aerogels was greatly enhanced. - Abstract: In this work, we developed a green synthesis method to prepare the hybrid aerogels containing graphene oxide (GO) and microcrystalline cellulose (MCC) using lithium bromide (LiBr) aqueous solution as the solvent, which insured the complete dissolution of MCC. The interaction between GO and MCC was investigated through different methods The results demonstrate that there is a strong interaction between GO and MCC molecules, which promotes the exfoliation of GO in the hybrid aerogels. The hybrid GO/MCC aerogels exhibit typical three dimensional porous structure and the pore morphology can be well adjusted by changing the content of GO. The adsorption ability of the hybrid aerogels was measured using methylene blue (MB) as an adsorbate. The results show that the adsorption ability of GO per unit mass is greatly enhanced compared with the pure GO aerogel, especially at relatively low GO content the adsorption amount of GO per unit mass is enhanced up to 2630 mg/g. Further results demonstrate that the hybrid GO/MCC aerogels still obey the pseudo-second-order adsorption model, which is similar to that of the pure GO aerogel. The mechanism for the amplified adsorption ability of GO in the hybrid GO/MCC aerogels is then analyzed.

  5. Structural, optical and electrical properties of quasi-monocrystalline silicon thin films obtained by rapid thermal annealing of porous silicon layers

    International Nuclear Information System (INIS)

    Hajji, M.; Khardani, M.; Khedher, N.; Rahmouni, H.; Bessais, B.; Ezzaouia, H.; Bouchriha, H.

    2006-01-01

    Quasi-mono-crystalline silicon (QMS) layers have a top surface like crystalline silicon with small voids in the body. Such layers are reported to have a higher absorption coefficient than crystalline silicon at the interesting range of the solar spectrum for photovoltaic application. In this work we present a study of the structural, optical and electrical properties of quasimonocrystalline silicon thin films. Quasimonocrystalline silicon thin films were obtained from porous silicon, which has been annealed at a temperature ranging from 950 to 1050 deg. C under H 2 atmosphere for different annealing durations. The porous layers were prepared by conventional electrochemical anodization using a double tank cell and a HF / Ethanol electrolyte. Porous silicon is formed on highly doped p + -type silicon substrates that enable us to prevent back contacts for the anodization. Atomic Force Microscope (AFM) was used to study the morphological quality of the prepared layers. Optical properties were extracted from transmission and reflectivity spectra. Dark I-V characteristics were used to determine the electrical conductivity of quasimonocrystalline silicon thin films. Results show an important improvement of the absorption coefficient of the material and electrical conductivity reaches a value of twenty orders higher than that of starting mesoporous silicon

  6. Mussel-inspired fabrication of konjac glucomannan/microcrystalline cellulose intelligent hydrogel with pH-responsive sustained release behavior.

    Science.gov (United States)

    Wang, Lin; Du, Yu; Yuan, Yi; Mu, Ruo-Jun; Gong, Jingni; Ni, Yongsheng; Pang, Jie; Wu, Chunhua

    2018-07-01

    Intelligent hydrogels are attractive biomaterials for various applications, however, fabricating a hydrogel with both adequate self-healing ability and mechanical properties remains a challenge. Herein, a series of novel intelligent konjac glucomannan (KGM)/microcrystalline cellulose (MCC) hydrogels were prepared vis the mussel-inspired chemistry. MCC was firstly functionalized by the oxidative polymerization of dopamine, and the intelligent hydrogels were obtained by mixing aqueous solutions of KGM and functionalized MCC (PDMCC). By introducing PDMCC, a more compact interconnected porous structure formed for the resulting hydrogels. The self-healing ability and mechanical properties of intelligent hydrogels were dependence on the PDMCC content. Compared with KGM hydrogels, KGM/PDMCC hydrogels exhibited a more distinct pH sensitivity and a lower initial burst release, which was attributed to the compact structure and strong intermolecular hydrogen bond interaction between PDMCC and KGM. These results suggest that the KGM/PDMCC intelligent hydrogels may be promising carriers for controlled drug delivery. Copyright © 2018 Elsevier B.V. All rights reserved.

  7. Hydrogen isotopic substitution experiments in nanostructured porous silicon

    International Nuclear Information System (INIS)

    Palacios, W.D.; Koropecki, R.R.; Arce, R.D.; Busso, A.

    2008-01-01

    Nanostructured porous silicon is usually prepared by electrochemical anodization of monocrystalline silicon using a fluorine-rich electrolyte. As a result of this process, the silicon atoms conserve their original crystalline location, and many of the dangling bonds appearing on the surface of the nanostructure are saturated by hydrogen coming from the electrolyte. This work presents an IR study of the effects produced by partial substitution of water in the electrolytic solution by deuterium oxide. The isotopic effects on the IR spectra are analyzed for the as-prepared samples and for the samples subjected to partial thermal effusion of hydrogen and deuterium. We demonstrate that, although deuterium is chemically indistinguishable from hydrogen, it presents a singular behaviour when used in porous silicon preparation. We found that deuterium preferentially bonds forming Si-DH groups. A possible explanation of the phenomenon is presented, based on the different diffusivities of hydrogen and deuterium

  8. Hydrogen isotopic substitution experiments in nanostructured porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, W.D. [Facultad de Ciencias Exactas y Naturales y Agrimensura - (UNNE), Avenida Libertad 5500, 3400 Corrientes (Argentina); Koropecki, R.R. [INTEC (CONICET-UNL), Gueemes 3450, 3000 Santa Fe (Argentina)], E-mail: rkoro@intec.ceride.gov.ar; Arce, R.D. [INTEC (CONICET-UNL), Gueemes 3450, 3000 Santa Fe (Argentina); Busso, A. [Facultad de Ciencias Exactas y Naturales y Agrimensura - (UNNE), Avenida Libertad 5500, 3400 Corrientes (Argentina)

    2008-04-30

    Nanostructured porous silicon is usually prepared by electrochemical anodization of monocrystalline silicon using a fluorine-rich electrolyte. As a result of this process, the silicon atoms conserve their original crystalline location, and many of the dangling bonds appearing on the surface of the nanostructure are saturated by hydrogen coming from the electrolyte. This work presents an IR study of the effects produced by partial substitution of water in the electrolytic solution by deuterium oxide. The isotopic effects on the IR spectra are analyzed for the as-prepared samples and for the samples subjected to partial thermal effusion of hydrogen and deuterium. We demonstrate that, although deuterium is chemically indistinguishable from hydrogen, it presents a singular behaviour when used in porous silicon preparation. We found that deuterium preferentially bonds forming Si-DH groups. A possible explanation of the phenomenon is presented, based on the different diffusivities of hydrogen and deuterium.

  9. Effect of preparation conditions on the properties of glow-discharge intrinsic amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, M T; Carabe, J; Gandia, J J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Solonko, A [Inst. of High Temperatures of the USSR (IVTAN), Academy of Sciences, Moscow (USSR)

    1992-04-01

    The influence of the preparation conditions (process pressure, substrate temperature, RF-power density and deposition time/thickness) on the optical and electrical properties of intrinsic hydrogenated amorphous silicon (a-Si:H) has been investigated with the aim of optimising such films to be used as absorbent layers of a-Si:H-based p-i-n solar cells. Highly photosensitive films have been obtained at high growth rates (6.2 A s{sup -1}) in the depletion regime using a high process pressure (1000 mTorr), a moderate substrate temperature (250deg C) and a relatively high RF-power density (35.2 mW cm{sup -2}). These films have excellent properties for the application in question. (orig.).

  10. Fenton chemistry-based detemplation of an industrially relevant microcrystalline beta zeolite. Optimization and scaling-up studies

    NARCIS (Netherlands)

    Ortiz-Iniesta, Maria Jesus; Melian-Cabrera, Ignacio

    A mild template removal of microcrystalline beta zeolite, based on Fenton chemistry, was optimized. Fenton detemplation was studied in terms of applicability conditions window, reaction rate and scale up. TGA and CHN elemental analysis were used to evaluate the detemplation effectiveness, while 'CP,

  11. Photo and electroluminescence of porous silicon layers

    International Nuclear Information System (INIS)

    Keshmini, S.H.; Samadpour, S.; Haji-Ali, E.; Rokn-Abadi, M.R.

    1995-01-01

    Porous silicon (PSi) layers were prepared by both chemical and electrochemical methods on n- and p-type Si substrates. In the former technique, light emission was obtained from p-type and n-type samples. It was found that intense light illumination during the preparation process was essential for PSi formation on n-type substrates. An efficient electrochemical cell with some useful features was designed for electrochemical etching of silicon. Various preparation parameters were studied and photoluminescence emissions ranging from dark red to light blue were obtained from PSi samples prepared on p-type substrates. N-type samples produced emission ranging from dark red to orange yellow. Electroluminescence of porous silicon samples showed that the color of the emission was the same as the photoluminescence color of the sample, and its intensity and duration depended on the current density passed through the sample. The effects of exposure of samples to air, storage in vacuum and heat treatment in air on luminescence intensity of the samples and preparation of patterned porous layers were also studied. (author)

  12. Preparation of micro-porous bioceramic containing silicon-substituted hydroxyapatite and beta-tricalcium phosphate.

    Science.gov (United States)

    Fuh, Lih-Jyh; Huang, Ya-Jing; Chen, Wen-Cheng; Lin, Dan-Jae

    2017-06-01

    Dimensional instability caused by sintering shrinkage is an inevitable drawback for conventional processing of hydroxyapatite (HA). A new preparation method for biphasic calcium phosphates was developed to increase micro pores and biodegradation without significant dimensional change. Powder pressed HA discs, under 100MPa, were immersed in a colloidal mixture of tetraethoxysilane (TEOS) and ammonium hydroxide for 10min, followed by drying, and then were sintered at 900°C, 1050°C, and 1200°C, respectively. Comparing with pure HA discs, the newly prepared product sintered up to 1200°C contained silicon substituted HA, beta-tricalcium phosphate, and calcium silicate with better micro-porosity, high specific surface area, less sintering shrinkage and the strength maintained. The cytocompatibility test demonstrated a better viability for D1 mice stem cells cultured on TEOS treated HA for 14days compared to the pure HA. This simple TEOS sol-gel pretreatment has the potential to be applied to any existing manufacturing process of HA scaffold for better control of sintering shrinkage, create micropores, and increase biodegradation. Copyright © 2017 Elsevier B.V. All rights reserved.

  13. Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

    International Nuclear Information System (INIS)

    Duraia, El-Shazly M.; Mansurov, Z.A.; Tokmolden, S.; Beall, Gary W.

    2010-01-01

    In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm -1 and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

  14. Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Duraia, El-Shazly M., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansurov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Beall, Gary W. [Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States)

    2010-02-15

    In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm{sup -1} and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

  15. Effects of Preparation Conditions on the Yield and Embedding Ratio of Vinyl Silicone Oil Microcapsules

    Directory of Open Access Journals (Sweden)

    Aijie MA

    2016-05-01

    Full Text Available Self-healing materials could repair themselves without external influences when they are damaged. In this paper, microcapsules are prepared by in-situ polymerization method with vinyl silicone oil as core material, polyurea formaldehyde (PUF as wall material and polyvinyl alcohol as dispersants. The morphology and structure of the microcapsules are tested with scanning electron microscopy (SEM, polarizing microscope(PM)and laser particle analyzer(LPA. Effect of the reaction temperature, stirring speed and PVA concentration on the yield, embedding ratio, particle size and distribution of the microcapsules are studied. Results show that the microcapsules can be successfully prepared by in situ polymerization method. When the reaction temperature was 60℃, the stirring speed 1000 r/min, dispersant concentration 0.1%, the yield and embedding ratio of the microcapsule are 52.5% and 50.1%. The microcapsules prepared have smooth surface, well dispersibility, narrow particle size distribution and the average particle size is 13 μm.DOI: http://dx.doi.org/10.5755/j01.ms.22.2.13026

  16. Antibacterial Modification of Microcrystalline Cellulose by Grafting Copolymerization

    Directory of Open Access Journals (Sweden)

    Ying Liu

    2015-11-01

    Full Text Available Microcrystalline cellulose (MCC has the advantage of a high specific surface area as compared to that of conventional cellulose fibers. In this study the monomer methacrylamide (MAM was used to treat MCC by grafting copolymerization. SEM, FTIR, and solid 13C NMR were used to characterize the morphology and composition of MAM-g-MCC. After the chlorination of MAM-g-MCC with 10% sodium hypochlorite solution, the grafted MCC exhibited antibacterial activity as a result of the formation of N-Cl bonds. The thermal stability, antibacterial ability, and storage stability of chlorinated MAM-g-MCC were also studied. The results showed that the chlorinated MAM-g-MCC had excellent storage stability and could inactivate all S. aureus and E. coli O157:H7 within 10 min.

  17. Separation followed by direct SERS detection of explosives on a novel black silicon multifunctional nanostructured surface prepared in a microfluidic channel

    DEFF Research Database (Denmark)

    Talian, Ivan; Hübner, Jörg

    2013-01-01

    The article describes the multifunctionality of a novel black silicon (BS) nanostructured surface covered with a thin layer of noble metal prepared in the a microfluidic channel. It is focused on the separation properties of the BS substrate with direct detection of the separated analytes utilizing...

  18. Properties of native and immobilised preparations of. beta. -D-glucosidase from Aspergillus niger

    Energy Technology Data Exchange (ETDEWEB)

    Woodward, J.; Wohlpart, D.L.

    1982-01-01

    The enzyme ..beta..-D-glucosidase from Aspergillus niger has been immobilised through its carbohydrate moiety on concanavalin A-Sepharose and on cyanogen bromide-activated Sepharose after aminoalkylation of the carbohydrate side chains of the enzyme. For comparison, the enzyme was also immobilised on microcrystalline cellulose through its protein moiety. High retention of activity and a decrease in K/sub m/ and V/sub max/ were observed when ..beta..-D-glucosidase was immobilised by these methods. An increase in the thermal stability of the immobilised ..beta..-D-glucosidase preparations over the soluble enzyme was achieved if it was treated with glutaraldehyde before its adsorption on concanavalin A-Sepharose or if the enzyme immobilised on cyanogen bromide-activated Sepharose was subsequently treated with glutaralydehyde. Treatment of ..beta..-D-glucosidase immobilised on microcrystalline cellulose with glutaraldehyde hardy increased its thermal stability over the soluble enzyme.

  19. Properties of native and immobilised preparations of beta-d-glucosidase from Aspergillus niger

    Energy Technology Data Exchange (ETDEWEB)

    Woodward, J.; Wohlpart, D.L.

    1982-04-01

    The enzyme beta-glucosidase from Aspergillus niger has been immobilised through its carbohydrate moiety on concanavalin A-Sepharose and on cyanogen bromide-activated Sepharose after aminoalkylation of the carbohydrate side chains of the enzyme. For comparison, the enzyme was also immobilised on microcrystalline cellulose through its protein moiety. High retention of activity and a decrease in Km and Vmax were observed when beta-D-glucosidase was immobilised by these methods. An increase in the thermal stability of the immobilized beta-D-glucosidase preparations over the soluble enzyme was achieved if it was treated with glutaraldehyde before its adsorption on concanavalin A-Sepharose or if the enzyme immobilised on cyanogen bromide-activated Sepharose was subsequently treated with glutaraldehyde. Treatment of beta-D-glucosidase immobilised on microcrystalline cellulose with glutaraldehyde hardly increased its thermal stability over the soluble enzyme. (Refs. 24).

  20. Simulation of High Efficiency Heterojunction Solar Cells with AFORS-HET

    International Nuclear Information System (INIS)

    Wang Lisheng; Chen Fengxiang; Ai Yu

    2011-01-01

    In this paper, the high efficiency TCO/a-Si:H (n)/a-Si:H(i)/c-Si(p)/uc-Si(p + )/Al HIT (heterojunction with intrinsic thin-layer) solar cells was analyzed and designed by AFORS-HET software. The influences of emitter, intrinsic layer and back surface field (BSF) on the photovoltaic characteristics of solar cell were discussed. The simulation results show that the key role of the intrinsic layer inserted between the a-Si:H and crystalline silicon substrate is to decrease the interface states density. If the interface states density is lower than 10 10 cm -2 V -1 thinner intrinsic layer is better than thicker one. The increase of the thickness of the emitter will decrease the short-current density and affect the conversion efficiency. Microcrystalline BSF can increase conversion efficiency more than 2 percentage points compared with HIT solar cell with no BSF. But this BSF requires the doping concentration must exceed 10 20 cm -3 . Considered the band mismatch between crystalline silicon and microcrystalline silicon, the optimal band gap of microcrystalline silicon BSF is about 1.4-1.6eV.

  1. Nickel-induced crystallization of amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, J A; Arce, R D; Buitrago, R H [INTEC (CONICET-UNL), Gueemes 3450, S3000GLN Santa Fe (Argentina); Budini, N; Rinaldi, P, E-mail: jschmidt@intec.unl.edu.a [FIQ - UNL, Santiago del Estero 2829, S3000AOM Santa Fe (Argentina)

    2009-05-01

    The nickel-induced crystallization of hydrogenated amorphous silicon (a-Si:H) is used to obtain large grained polycrystalline silicon thin films on glass substrates. a-Si:H is deposited by plasma enhanced chemical vapour deposition at 200 deg. C, preparing intrinsic and slightly p-doped samples. Each sample was divided in several pieces, over which increasing Ni concentrations were sputtered. Two crystallization methods are compared, conventional furnace annealing (CFA) and rapid thermal annealing (RTA). The crystallization was followed by optical microscopy and scanning electron microscopy observations, X-ray diffraction, and reflectance measurements in the UV region. The large grain sizes obtained - larger than 100{mu}m for the samples crystallized by CFA - are very encouraging for the preparation of low-cost thin film polycrystalline silicon solar cells.

  2. High yield silicon carbide prepolymers

    International Nuclear Information System (INIS)

    Baney, R.H.

    1982-01-01

    Prepolymers which exhibit good handling properties, and are useful for preparing ceramics, silicon carbide ceramic materials and articles containing silicon carbide, are polysilanes consisting of 0 to 60 mole% (CH 3 ) 2 Si units and 40 to 100 mole% CH 3 Si units, all Si valences being satisfied by CH 3 groups, other Si atoms, or by H atoms, the latter amounting to 0.3 to 2.1 weight% of the polysilane. They are prepared by reducing the corresponding chloro- or bromo-polysilanes with at least the stoichiometric amount of a reducing agent, e.g. LiAlH 4 . (author)

  3. Effects of electron beam radiation dose on the compatibilization behaviour in recycled polypropylene/microcrystalline cellulose composites

    Science.gov (United States)

    Samat, N.; Motsidi, S. N. R.; Lazim, N. H. M.

    2018-01-01

    The purpose of this research was to evaluate the influence of dose level of electron beam on the compatibilization behavior of recycled polypropylene (rPP) in rPP/microcrystalline cellulose (MCC) composites. Initially, the rPP was irradiated with various dose of electron beam (5 kGy up to 250 kGy) which then mixed with unirradiated rPP (u-rPP) at a ratio of 30:70 respectively. The composites were prepared by incorporating a series wt% of MCC fibers into rPP (u-rPP : i-rPP) using extruder and finally moulded with an injection moulding machine. The compatibility behavior of irradiated rPP (i-rPP) were analysed with mechanical tensile and thermal methods. The results of mechanical analysis showed great improvement in tensile modulus but an increase in radiation dosage gradually decreased this property. Nevertheless, the tensile strength exhibited a minor effect. The thermal stability of composites is lowered with increase in the absorbed dose, more significantly at higher content of MCC. Fracture surface observations reveal adhesion between the cellulose and rPP matrix.

  4. An XRPD and EPR spectroscopy study of microcrystalline calcite bioprecipitated by Bacillus subtilis

    Science.gov (United States)

    Perito, B.; Romanelli, M.; Buccianti, A.; Passaponti, M.; Montegrossi, G.; Di Benedetto, F.

    2018-05-01

    We report in this study the first XRPD and EPR spectroscopy characterisation of a biogenic calcite, obtained from the activity of the bacterium Bacillus subtilis. Microcrystalline calcite powders obtained from bacterial culture in a suitable precipitation liquid medium were analysed without further manipulation. Both techniques reveal unusual parameters, closely related to the biological source of the mineral, i.e., to the bioprecipitation process and in particular to the organic matrix observed inside calcite. In detail, XRPD analysis revealed that bacterial calcite has slightly higher c/a lattice parameters ratio than abiotic calcite. This correlation was already noticed in microcrystalline calcite samples grown by bio-mineralisation processes, but it had never been previously verified for bacterial biocalcites. EPR spectroscopy evidenced an anomalously large value of W 6, a parameter that can be linked to occupation by different chemical species in the next nearest neighbouring sites. This parameter allows to clearly distinguish bacterial and abiotic calcite. This latter achievement was obtained after having reduced the parameters space into an unbiased Euclidean one, through an isometric log-ratio transformation. We conclude that this approach enables the coupled use of XRPD and EPR for identifying the traces of bacterial activity in fossil carbonate deposits.

  5. A novel process for synthesis of spherical nanocellulose by controlled hydrolysis of microcrystalline cellulose using anaerobic microbial consortium.

    Science.gov (United States)

    Satyamurthy, P; Vigneshwaran, N

    2013-01-10

    Degradation of cellulose by anaerobic microbial consortium is brought about either by an exocellular process or by secretion of extracellular enzymes. In this work, a novel route for synthesis of nanocellulose is described where in an anaerobic microbial consortium enriched for cellulase producers is used for hydrolysis. Microcrystalline cellulose derived from cotton fibers was subjected to controlled hydrolysis by the anaerobic microbial consortium and the resultant nanocellulose was purified by differential centrifugation technique. The nanocellulose had a bimodal size distribution (43±13 and 119±9 nm) as revealed by atomic force microscopy. A maximum nanocellulose yield of 12.3% was achieved in a span of 7 days. While the conventional process of nanocellulose preparation using 63.5% (w/w) sulfuric acid resulted in the formation of whisker shaped nanocellulose with surface modified by sulfation, controlled hydrolysis by anaerobic microbial consortium yielded spherical nanocellulose also referred to as nano crystalline cellulose (NCC) without any surface modification as evidenced from Fourier transform infrared spectroscopy. Also, it scores over chemo-mechanical production of nanofibrillated cellulose by consuming less energy due to enzyme (cellulase) assisted catalysis. This implies the scope for use of microbial prepared nanocellulose in drug delivery and bio-medical applications requiring bio-compatibility. Copyright © 2012 Elsevier Inc. All rights reserved.

  6. Preparation and evaluation of Vinpocetine self-emulsifying pH gradient release pellets.

    Science.gov (United States)

    Liu, Mengqi; Zhang, Shiming; Cui, Shuxia; Chen, Fen; Jia, Lianqun; Wang, Shu; Gai, Xiumei; Li, Pingfei; Yang, Feifei; Pan, Weisan; Yang, Xinggang

    2017-11-01

    The main objective of this study was to develop a pH gradient release pellet with self-emulsifying drug delivery system (SEDDS), which could not only improve the oral bioavailability of Vinpocetine (VIN), a poor soluble drug, but reduce the fluctuation of plasma concentration. First, the liquid VIN SEDDS formulation was prepared. Then the self-emulsifying pH gradient release pellets were prepared by extrusion spheronization technique, and formulation consisted by the liquid SEDDS, absorbent (colloidal silicon dioxide), penetration enhancer (sodium chloride), microcrystalline cellulose, ethyl alcohol, and three coating materials (HPMC, Eudragit L30D55, Eudragit FS30D) were eventually selected. Three kinds of coated pellets were mixed in capsules with the mass ratio of 1:1:1. The release curves of capsules were investigated in vitro under the simulated gastrointestinal conditions. In addition, the oral bioavailability and pharmacokinetics of VIN self-emulsifying pH gradient release pellets, commercial tablets and liquid VIN SEDDS were evaluated in Beagle dogs. The oral bioavailability of self-emulsifying pH gradient release pellets was about 149.8% of commercial VIN tablets, and it was about 86% of liquid VIN SEDDS, but there were no significant difference between liquid SEDDS and self-emulsifying pH gradient release pellets. In conclusion, the self-emulsifying pH gradient release pellets could significantly enhance the absorption of VIN and effectively achieve a pH gradient release. And the self-emulsifying pH gradient release pellet was a promising method to improve bioavailability of insoluble drugs.

  7. Preparation of silicon-substituted hydroxyapatite coatings on Ti–30Nb–xTa alloys using cyclic electrochemical deposition method

    International Nuclear Information System (INIS)

    Kim, Eun-Sil; Jeong, Yong-Hoon; Choe, Han-Cheol; Brantley, William A.

    2014-01-01

    Silicon-substituted hydroxyapatite coatings on Ti–30Nb–xTa alloys, prepared using a cyclic electrochemical deposition method, have been investigated using a variety of surface analytical experimental methods. The silicon-substituted hydroxyapatite (Si-HA) coatings were prepared by electrolytic deposition in electrolytes containing Ca 2+ , PO 4 3− and SiO 3 2− ions. The deposited layers were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDS), and a wettability test. Phase transformation from (α″ + β) to largely β occurred with increasing Ta content in the Ti –30Nb–xTa alloys, yielding larger grain size. The morphology of the Si-HA coatings was changed by increasing the number of deposition cycles, with the initial plate-like structures changing to mixed rod-like and plate-like shapes, and finally to a rod-like structure. From the ATR-FTIR spectra, Si existed in the form of SiO 4 4− groups in Si-HA coating layer. The lowest aqueous contact angles and best wettability were found for the Si-HA coatings prepared with 30 deposition cycles. - Highlights: • Electrochemically deposited Si-HA coatings on Ti –30Nb–xTa alloys were investigated. • The Si-HA coatings were initially precipitated along the martensitic structure. • The morphology of the Si-HA coating changed with the deposition cycles. • Si existed in the form of SiO 4 4− groups in the Si-HA coating

  8. Large-scale synthesis of double cauliflower-like Sb2S3 microcrystallines by hydrothermal method

    International Nuclear Information System (INIS)

    Wu, Lei; Xu, Hanyue; Han, Qiaofeng; Wang, Xin

    2013-01-01

    Highlights: •Highly uniform double cauliflower-like Sb 2 S 3 particles were synthesized via hydrothermal method. •Influence of reaction conditions on the morphology of the products was discussed. •Double cauliflower-like Sb 2 S 3 superstructures revealed broad spectrum response. -- Abstract: The double cauliflower-like Sb 2 S 3 superstructures assembled by nanorods were prepared using SbCl 3 and Na 2 S⋅9H 2 O as raw materials, dodecyltrimethylammonium bromide (DTAB, C 15 H 31 BrN) as surfactant under acidic condition at 180 °C for 30 h. The structure, morphology and composition of the product were characterized by X-ray diffraction pattern (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and energy diffraction spectroscopy (EDS). The effect of reaction conditions including temperature, reaction time and surfactants on the sample morphology was discussed and a possible mechanism for the formation of cauliflower-like Sb 2 S 3 was proposed. The cauliflower-like Sb 2 S 3 microcrystallines revealed broad spectrum response, which may have a good application prospect in solar energy utilization and photoelectric conversion fields

  9. Preparation and mechanical properties of liquid-phase sinterd silicon carbide; Herstellung und mechanische Eigenschaften von fluessigphasengesintertem Siliziumkarbid

    Energy Technology Data Exchange (ETDEWEB)

    Wiedmann, I.

    1998-12-01

    Liquid-phase sintered silicon carbide ceramics, LPS-SiC, were prepared, and the influence of structure and chemical secondary phase composition on the mechanical properties was investigated in order to identify LPS-SiC materials which can be produced reproducibly and with low loss of mass by simple techniques, i.e. without powder bed or encapsulation. Their profile of characteristics should be superior to conventional solid-phase sintered SiC and should be comparable with liquid-phase sintered silicon nitride ceramics. [Deutsch] In der vorliegenden Arbeit wurden fluessigphasengesinterte Siliziumkarbid-Keramiken, LPS-SiC, hergestellt und der Einfluss der Gefuegeausbildung und der chemischen Sekundaerphasenzusammensetzung auf die mechanischen Eigenschaften untersucht. Ziel war es, LPS-SiC-Materialien zu identifizieren, die ohne besonderen Vorkehrungen wie Pulverbett oder Einkapselung reproduzierbar und mit geringem Masseverlust hergestellt werden koennen. Das Eigenschaftsprofil sollte deutlich ueber dem von konventionell festphasengesintertem SiC liegen und vergleichbar zu fluessigphasengesinterten Siliziumnitrid-Keramiken sein. (orig.)

  10. Scattering characteristics from porous silicon

    Directory of Open Access Journals (Sweden)

    R. Sabet-Dariani

    2000-12-01

    Full Text Available   Porous silicon (PS layers come into existance as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet.   In this article, first, the optical properties of silicon and porous silicon are described. Then, previous research and the proposed models about reflection from PS and the origin of its photoluminescence are reveiwed. The reflecting and scattering, absorption and transmission of light from this material, are then investigated. These experiments include,different methods of PS sample preparation their photoluminescence, reflecting and scattering of light determining different characteristics with respect to Si bulk.

  11. Porosity and thickness effect of porous silicon layer on photoluminescence spectra

    Science.gov (United States)

    Husairi, F. S.; Eswar, K. A.; Guliling, Muliyadi; Khusaimi, Z.; Rusop, M.; Abdullah, S.

    2018-05-01

    The porous silicon nanostructures was prepared by electrochemical etching of p-type silicon wafer. Porous silicon prepared by using different current density and fix etching time with assistance of halogen lamp. The physical structure of porous silicon measured by the parameters used which know as experimental factor. In this work, we select one of those factors to correlate which optical properties of porous silicon. We investigated the surface morphology by using Surface Profiler (SP) and photoluminescence using Photoluminescence (PL) spectrometer. Different physical characteristics of porous silicon produced when current density varied. Surface profiler used to measure the thickness of porous and the porosity calculated using mass different of silicon. Photoluminescence characteristics of porous silicon depend on their morphology because the size and distribution of pore its self will effect to their exciton energy level. At J=30 mA/cm2 the shorter wavelength produced and it followed the trend of porosity with current density applied.

  12. Investigation of positive roles of hydrogen plasma treatment for interface passivation based on silicon heterojunction solar cells

    International Nuclear Information System (INIS)

    Zhang, Liping; Liu, Wenzhu; Liu, Jinning; Shi, Jianhua; Meng, Fanying; Liu, Zhengxin; Guo, Wanwu; Bao, Jian

    2016-01-01

    The positive roles of H 2 -plasma treatment (HPT) have been investigated by using different treatment procedures in view of the distinctly improved passivation performance of amorphous-crystalline silicon heterojunctions (SHJs). It has been found that a hydrogenated amorphous silicon thin film and crystalline silicon (a-Si:H/c-Si) interface with a high stretching mode (HSM) is detrimental to passivation. A moderate pre-HPT introduces atomic H, which plays an effective tuning role in decreasing the interfacial HSM; unfortunately, an epitaxial layer is formed. Further improvement in passivation can be achieved in terms of increasing the HSM of a-Si:H film treated by appropriate post-HPT based on the a-Si:H thickness. The minority carrier lifetime of crystalline wafers can be improved by treated films containing a certain quantity of crystallites. The microstructure factor R and the maximum intensity of the dielectric function ε 2max have been found to be critical microstructure parameters that describe high-quality a-Si:H passivation layers, which are associated with the amorphous-to-microcrystalline transition phase induced by multi-step HPT. Finally, the open circuit voltage and conversion efficiency of the SHJ solar cell can be improved by implementing an effective HPT process. (paper)

  13. Textural and chemical properties of zinc chloride activated carbons prepared from pistachio-nut shells

    Energy Technology Data Exchange (ETDEWEB)

    Ting, Yang [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Lua, Aik Chong [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

    2006-12-10

    The effects of activation temperature on the textural and chemical properties of the activated carbons prepared from pistachio-nut shells using zinc chloride activation under both inert nitrogen gas atmosphere and vacuum condition were studied. Relatively low temperature of 400 deg. C was beneficial for the development of pore structures. Too high an activation temperature would lead to sintering of volatiles and shrinkage of the carbon structure. The microstructures and microcrystallinity of the activated carbons prepared were examined by scanning electron microscope and powder X-ray diffraction techniques, respectively, while Fourier transform infrared spectra determined the changes in the surface functional groups at the various stages of preparation.

  14. Textural and chemical properties of zinc chloride activated carbons prepared from pistachio-nut shells

    International Nuclear Information System (INIS)

    Yang Ting; Lua, Aik Chong

    2006-01-01

    The effects of activation temperature on the textural and chemical properties of the activated carbons prepared from pistachio-nut shells using zinc chloride activation under both inert nitrogen gas atmosphere and vacuum condition were studied. Relatively low temperature of 400 deg. C was beneficial for the development of pore structures. Too high an activation temperature would lead to sintering of volatiles and shrinkage of the carbon structure. The microstructures and microcrystallinity of the activated carbons prepared were examined by scanning electron microscope and powder X-ray diffraction techniques, respectively, while Fourier transform infrared spectra determined the changes in the surface functional groups at the various stages of preparation

  15. Fractal analysis of SEM images and mercury intrusion porosimetry data for the microstructural characterization of microcrystalline cellulose-based pellets

    International Nuclear Information System (INIS)

    Gomez-Carracedo, A.; Alvarez-Lorenzo, C.; Coca, R.; Martinez-Pacheco, R.; Concheiro, A.; Gomez-Amoza, J.L.

    2009-01-01

    The microstructure of theophylline pellets prepared from microcrystalline cellulose, carbopol and dicalcium phosphate dihydrate, according to a mixture design, was characterized using textural analysis of gray-level scanning electron microscopy (SEM) images and thermodynamic analysis of the cumulative pore volume distribution obtained by mercury intrusion porosimetry. Surface roughness evaluated in terms of gray-level non-uniformity and fractal dimension of pellet surface depended on agglomeration phenomena during extrusion/spheronization. Pores at the surface, mainly 1-15 μm in diameter, determined both the mechanism and the rate of theophylline release, and a strong negative correlation between the fractal geometry and the b parameter of the Weibull function was found for pellets containing >60% carbopol. Theophylline mean dissolution time from these pellets was about two to four times greater. Textural analysis of SEM micrographs and fractal analysis of mercury intrusion data are complementary techniques that enable complete characterization of multiparticulate drug dosage forms

  16. Dielectric barrier discharge plasma pretreatment on hydrolysis of microcrystalline cellulose

    Science.gov (United States)

    Huang, Fangmin; Long, Zhouyang; Liu, Sa; Qin, Zhenglong

    2017-04-01

    Dielectric barrier discharge (DBD) plasma was used as a pretreatment method for downstream hydrolysis of microcrystalline cellulose (MCC). The degree of polymerization (DP) of MCC decreased after it was pretreated by DBD plasma under a carrier gas of air/argon. The effectiveness of depolymerization was found to be influenced by the crystallinity of MCC when under the pretreatment of DBD plasma. With the addition of tert-butyl alcohol in the treated MCC water suspension solution, depolymerization effectiveness of MCC was inhibited. When MCC was pretreated by DBD plasma for 30 min, the total reducing sugar concentration (TRSC) and liquefaction yield (LY) of pretreated-MCC (PMCC) increased by 82.98% and 34.18% respectively compared with those for raw MCC.

  17. High-density oxidized porous silicon

    International Nuclear Information System (INIS)

    Gharbi, Ahmed; Souifi, Abdelkader; Remaki, Boudjemaa; Halimaoui, Aomar; Bensahel, Daniel

    2012-01-01

    We have studied oxidized porous silicon (OPS) properties using Fourier transform infraRed (FTIR) spectroscopy and capacitance–voltage C–V measurements. We report the first experimental determination of the optimum porosity allowing the elaboration of high-density OPS insulators. This is an important contribution to the research of thick integrated electrical insulators on porous silicon based on an optimized process ensuring dielectric quality (complete oxidation) and mechanical and chemical reliability (no residual pores or silicon crystallites). Through the measurement of the refractive indexes of the porous silicon (PS) layer before and after oxidation, one can determine the structural composition of the OPS material in silicon, air and silica. We have experimentally demonstrated that a porosity approaching 56% of the as-prepared PS layer is required to ensure a complete oxidation of PS without residual silicon crystallites and with minimum porosity. The effective dielectric constant values of OPS materials determined from capacitance–voltage C–V measurements are discussed and compared to FTIR results predictions. (paper)

  18. Synthesis, characterization and adsorption properties of microcrystalline cellulose based nanogel for dyes and heavy metals removal.

    Science.gov (United States)

    El-Naggar, Mehrez E; Radwan, Emad K; El-Wakeel, Shaimaa T; Kafafy, Hany; Gad-Allah, Tarek A; El-Kalliny, Amer S; Shaheen, Tharwat I

    2018-07-01

    Recently, naturally occurring biopolymers have attracted the attention as potential adsorbents for the removal of water contaminants. In this work, we present the development of microcrystalline cellulose (MCC)-based nanogel grafted with acrylamide and acrylic acid in the presence of methylene bisacrylamide and potassium persulphate as a crosslinking agent and initiator, respectively. World-class facilities such as X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), surface analysis, field emission scanning electron microscopy (FE-SEM), high resolution transmission electron microscopy (HR-TEM) and zeta sizer were used to characterize the synthesized MCC based nanogel. The prepared nanogel was applied to remove reactive red 195 (RR195) dye and Cd (II) from aqueous medium at different operational conditions. The adsorption experiments showed that the feed concentration of monomers has a significant effect on the removal of RR195 which peaked (93% removal) after 10min of contact time at pH2 and a dose of 1.5g/L. On contrary, the feed concentration has insignificant effect on the removal of Cd (II) which peaked (97% removal) after 30min of contact time at pH6 and a dose of 0.5g/L. The adsorption equilibrium data of RR195 and Cd (II) was best described by Freundlich and Langmuir, respectively. Conclusively, the prepared MCC based nanogels were proved as promising adsorbents for the removal of organic pollutants as well as heavy metals. Copyright © 2018 Elsevier B.V. All rights reserved.

  19. High photoconductive hydrogenated silicon by reactive sputtering in helium containing atmosphere

    International Nuclear Information System (INIS)

    Ohbiki, Tohru; Imura, Takeshi; Hiraki, Akio

    1982-01-01

    Mixed phase of amorphous and microcrystalline silicon-hydrogen alloys has been fabricated by reactive sputtering in He containing H 2 of which mole fraction is less than about 5 mole%. The degree of the crystallization, evaluated by electron microscopy and optical absorption spectroscopy, becomes high as the amount of H 2 in the atmosphere increases. The conductivity in dark and photoconductivity increase as the partial pressure of H 2 increases (form 0 to 1 mole%) and also as the pressure during sputtering increases. This increase in conductivity and photoconductivity is supposed to be related to the development of microcrystals. The highest photoconductivity is observed at the H 2 mole fraction of about 1 mole%. This film contains a small amount of microcrystals and show the photoconductivity higher by 2 orders of magnitude than that in a film sputter-deposited in Ar and H 2 atmosphere in the same apparatus. (author)

  20. AFM and FTIR characterization of microcrystalline Si obtained from isothermal annealing of Al/a-Si:H

    Energy Technology Data Exchange (ETDEWEB)

    Rojas-Lopez, M.; Orduna-Diaz, A.; Delgado-Macuil, R. [Centro de Investigacion en Biotecnologia Aplicada (CIBA), IPN, Tlaxcala, Tlax. 72197 (Mexico); Olvera-Hernandez, J. [Centro de Investigacion en Dispositivos Semiconductores (CIDS), BUAP, Puebla, Pue. 72570 (Mexico); Navarro-Contreras, H.; Vidal, M.A.; Saucedo, N.; Mendez-Garcia, V.H. [Instituto de Investigacion en Comunicacion Optica (IICO), UASLP, San Luis Potosi, S.L.P. 78100 (Mexico)

    2007-04-15

    Atomic force microscopy and Fourier transform infrared spectroscopy were used to investigate the morphology of the microcrystalline surface, and also the amorphous-crystalline structural transformation of a-Si:H films, isothermally annealed during several hours. Crystallization process was strongly influenced by the deposition of an Al layer on the surface of a-Si:H samples. Representative AFM images show the presence of grains, which increase in diameter with the annealing time. Relative crystallized fraction as a function of the annealing time can be described adequately by using the Avrami equation. The kinetic of this crystallization process suggest a two-dimensional growth of the Si nuclei. Fourier transform infrared measurements show the presence of an intense band near 512 cm{sup -1} associated to Si-Si bonding. We observed the relative diminishing of the intensity of the Si-H wagging mode at 694 cm{sup -1} with annealing time, suggesting effusion of hydrogen to the surface of microcrystalline films. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Effect of Ge atoms on crystal structure and optoelectronic properties of hydrogenated Si-Ge films

    Science.gov (United States)

    Li, Tianwei; Zhang, Jianjun; Ma, Ying; Yu, Yunwu; Zhao, Ying

    2017-07-01

    Optoelectronic and structural properties of hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H) alloys prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) were investigated. When the Ge atoms were predominantly incorporated in amorphous matrix, the dark and photo-conductivity decreased due to the reduced crystalline volume fraction of the Si atoms (XSi-Si) and the increased Ge dangling bond density. The photosensitivity decreased monotonously with Ge incorporation under higher hydrogen dilution condition, which was attributed to the increase in both crystallization of Ge and the defect density.

  2. Bioconversion of different sizes of microcrystalline cellulose pretreated by microwave irradiation with/without NaOH

    International Nuclear Information System (INIS)

    Peng, Huadong; Chen, Hongzhang; Qu, Yongshui; Li, Hongqiang; Xu, Jian

    2014-01-01

    Highlights: • High concentration of alkali or temperature was necessary in cellulose degradation. • Effects of alkali pretreatment could be enhanced with the addition of microwave irradiation. • The structures diversities of microcrystalline cellulose were eliminated in the fermentation. • The significance of particle size and treat condition varied with reaction time. - Abstract: The process of microwave irradiation (MWI) pretreatment on microcrystalline cellulose (MCC) with different sizes with/without NaOH was investigated on the variation of the ratio of degradated solid residue (R DS ), particle size, crystallinity index (CrI), crystallite size (Sc) and specific surface area (SSA). High concentration of alkali or high temperature was necessary in dissolving or decomposing the cellulose. Appropriate pretreatment severity eliminated the effects of structural diversities in feedstocks, which led to convergence in the ethanol fermentation. After the reaction proceeded to 120 h, the samples could be converted to glucose completely and the highest ethanol yield of the theoretical was 58.91% for all the samples pretreated by the combined treatment of MWI and NaOH. In addition, the statistical analysis implied that when reaction time got to 24 h, particle size and pretreatment condition affected much more significant than other factors

  3. Preparation of silicon-substituted hydroxyapatite coatings on Ti–30Nb–xTa alloys using cyclic electrochemical deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Eun-Sil [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, School of Dentistry, Chosun University (Korea, Republic of); Jeong, Yong-Hoon [Biomechanics and Tissue Engineering Laboratory, Division of Orthodontics, College of Dentistry, The Ohio State University, Columbus, OH (United States); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, School of Dentistry, Chosun University (Korea, Republic of); Brantley, William A. [Division of Restorative Science and Prosthodontics, College of Dentistry, The Ohio State University, Columbus, OH (United States)

    2014-12-01

    Silicon-substituted hydroxyapatite coatings on Ti–30Nb–xTa alloys, prepared using a cyclic electrochemical deposition method, have been investigated using a variety of surface analytical experimental methods. The silicon-substituted hydroxyapatite (Si-HA) coatings were prepared by electrolytic deposition in electrolytes containing Ca{sup 2+}, PO{sub 4}{sup 3−} and SiO{sub 3}{sup 2−} ions. The deposited layers were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDS), and a wettability test. Phase transformation from (α″ + β) to largely β occurred with increasing Ta content in the Ti –30Nb–xTa alloys, yielding larger grain size. The morphology of the Si-HA coatings was changed by increasing the number of deposition cycles, with the initial plate-like structures changing to mixed rod-like and plate-like shapes, and finally to a rod-like structure. From the ATR-FTIR spectra, Si existed in the form of SiO{sub 4}{sup 4−} groups in Si-HA coating layer. The lowest aqueous contact angles and best wettability were found for the Si-HA coatings prepared with 30 deposition cycles. - Highlights: • Electrochemically deposited Si-HA coatings on Ti –30Nb–xTa alloys were investigated. • The Si-HA coatings were initially precipitated along the martensitic structure. • The morphology of the Si-HA coating changed with the deposition cycles. • Si existed in the form of SiO{sub 4}{sup 4−} groups in the Si-HA coating.

  4. NEW METHOD OF PRODUCTION OF ALUNINUM SILICON ALLOYS

    Directory of Open Access Journals (Sweden)

    V. K. Afanasiev

    2015-01-01

    Full Text Available A new approach to the preparation of aluminum-silicon alloys, based on the concept of the leading role of hydrogen in determining the structure and properties of alloys consists in using as charge materials of silicon dioxide (silica and hydrogen instead of crystalline silicon was described. Practical ways to implement the new method were proposed on the example of industrial alloys prepared on charge synthetic alloy. It is shown that the application of the proposed method allows to improve the mechanical properties and reduce the coefficient of thermal expansion alloys, Al-Si. The effect of heat treatment on mechanical properties, density and thermal expansion of synthetic alloys was researched.

  5. Preparation of Silicon by Calcium Reduction of Purified Rice Husk Ash

    International Nuclear Information System (INIS)

    Swe Zin Tun

    2011-12-01

    This research has studied on the possibility of production and preparation of silicon powder from rice husk ash (RHA) as raw material. RHA from gasifier, a waste product of the rice mill is rich in silica which contains 90.43% of silica. RHAs were purified by precipitation method using 1.5N, 2N, 2.5N and 3N of sodium hydroxide solution and 4.5N, 5N, 5.5N and 6.5N of sulphuric acid solution. The highest yield percent of silica was given by using 2.5N sodium hydroxide solution and 5N sulphuric acid solution X-ray fluoresence (XRF), X-rays diffraction (HRD) and Fourier transform infrared (FTRI) spectra were applied for determination of mineral content and chemical bonding in extracted silica and rice husk ash. Metallothermic reduction of purified extracted silica with calcium was investigated within the temperacture range of 700-900 C. The reduction product was characterized by XRD, XRF and scanning electron microcopy (SEM). The effect of temperature and reaction time in which reduction process was studied in this research.

  6. Enhancement of dielectric permittivity by incorporating PDMS-PEG multiblock copolymers in silicone elastomers

    DEFF Research Database (Denmark)

    A Razak, Aliff Hisyam; Szabo, Peter; Skov, Anne Ladegaard

    2015-01-01

    A silicone elastomer from PDMS-PEG multiblock copolymer has been prepared by use of silylation reactions for both copolymer preparation and crosslinking. The dielectric and mechanical properties of the silicone elastomers were carefully investigated, as well as the morphology of the elastomers wa...... to a significantly increased dielectric permittivity. The conductivity also remained low due to the resulting discontinuity in PEG within the silicone matrix....

  7. Optical and microstructural investigations of porous silicon

    Indian Academy of Sciences (India)

    Raman scattering and photoluminescence (PL) measurements on (100) oriented -type crystalline silicon (-Si) and porous silicon (PS) samples were carried out. PS samples were prepared by anodic etching of -Si under the illumination of light for different etching times of 30, 60 and 90 min. Raman scattering from the ...

  8. Superconducting Sweet-Spot in Microcrystalline Graphite Revealed by Point-Contact Spectroscopy

    Science.gov (United States)

    Arnold, F.; Nyéki, J.; Saunders, J.

    2018-05-01

    In this letter we describe the observation of a magnetic field dependent electronic gap, suggestive of local superconductivity, in the point-contact spectrum of micro-crystalline graphite. Magnetic field dependent point-contact spectroscopy was carried out at a temperature of 1.8K using an etched aluminium tip. At zero field a gap structure in the differential conductance is observed, showing a gap of Δ = 4.2 meV. On applying magnetic fields of up to 500mT, this gap gradually closes, following the theoretical prediction by Ginzburg and Landau for a fully flux-penetrated superconductor. By applying BCS-theory, we infer a critical superconducting temperature of 14K.

  9. Amphiphilic silicone architectures via anaerobic thiol-ene chemistry.

    Science.gov (United States)

    Keddie, Daniel J; Grande, John B; Gonzaga, Ferdinand; Brook, Michael A; Dargaville, Tim R

    2011-11-18

    Despite broad application, few silicone-based surfactants of known structure or, therefore, surfactancy have been prepared because of an absence of selective routes and instability of silicones to acid and base. Herein the synthesis of a library of explicit silicone-poly(ethylene glycol) (PEG) materials is reported. Pure silicone fragments were generated by the B(C(6)F(5))(3)-catalyzed condensation of alkoxysilanes and vinyl-functionalized hydrosilanes. The resulting pure products were coupled to thiol-terminated PEG materials using photogenerated radicals under anaerobic conditions.

  10. Mass-producible method for preparation of a carbon-coated graphite@plasma nano-silicon@carbon composite with enhanced performance as lithium ion battery anode

    International Nuclear Information System (INIS)

    Chen, Hedong; Wang, Zhoulu; Hou, Xianhua; Fu, Lijun; Wang, Shaofeng; Hu, Xiaoqiao; Qin, Haiqing; Wu, Yuping

    2017-01-01

    Carbon-coated core-shell structure artificial graphite@plasma nano-silicon@carbon (AG@PNSi@C) composite, applying as lithium ion battery anode material, has been prepared via spray drying method. The plasma nano-silicon (<100 nm), which contained amorphous silicon, was synthesized by radio frequency induction plasma system with the high temperatures processing capability and high quench rates. The artificial graphite in the composite acts as the core which supports the particle and provides electroconductivity, while PNSi attached on the surface of the core, enhances the specific capacity of the composite. The as prepared composite shows superior performance as anode in lithium-ion batteries, regarding to the initial Coulombic efficiency and cycle life. The initial Coulombic efficiency of AG@PNSi@C electrode is 81.0% with a discharge capacity of 553 mAh g −1 and a recharge capacity of 448 mAh g −1 . During cycling, AG@PNSi@C exhibits excellent performance with a very low capacity fading that the discharge capacity maintains 498.2 mAh g −1 and 449.4 mAh g −1 after 250 cycles and 500 cycles. AG@PNSi@C also shows enhanced resistance against high current density. Besides the remarkable electrochemical performances, the facile and mass-producible synthesis process makes the AG@PNSi@C composite very promising for its application in lithium-ion batteries.

  11. A buffer-layer/a-SiO{sub x}:H(p) window-layer optimization for thin film amorphous silicon based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jinjoo; Dao, Vinh Ai [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Minbum; Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Doyoung [School of Electricity and Electronics, Ulsan College West Campus, Ulsan 680-749 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2013-11-01

    Amorphous silicon based (a-Si:H-based) solar cells with a buffer-layer/boron doped hydrogenated amorphous silicon oxide (a-SiO{sub x}:H(p)) window-layer were fabricated and investigated. In the first part, in order to reduce the Schottky barrier height at the fluorine doped tin oxide (FTO)/a-SiO{sub x}:H(p) window-layer heterointerface, we have used buffer-layer/a-SiO{sub x}:H(p) for the window-layer, in which boron doped hydrogenated amorphous silicon (a-Si:H(p)) or boron doped microcrystalline silicon (μc-Si:H(p)) is introduced as a buffer layer between the a-SiO{sub x}:H(p) and FTO of the a-Si:H-based solar cells. The a-Si:H-based solar cell using a μc-Si:H(p) buffer-layer shows the highest efficiency compared to the optimized bufferless, and a-Si:H(p) buffer-layer in the a-Si:H-based solar cells. This highest performance was attributed not only to the lower absorption of the μc-Si:H(p) buffer-layer but also to the lower Schottky barrier height at the FTO/window-layer interface. Then, we present the dependence of the built-in potential (V{sub bi}) and blue response of the devices on the inversion of activation energy (ξ) of the a-SiO{sub x}:H(p), in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. The enhancement of both V{sub bi} and blue response is observed, by increasing the value of ξ. The improvement of V{sub bi} and blue response can be ascribed to the enlargement of the optical gap of a-SiO{sub x}:H(p) films in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. Finally, the conversion efficiency was increased by 22.0%, by employing μc-Si:H(p) as a buffer-layer and raising the ξ of the a-SiO{sub x}:H(p), compared to the optimized bufferless case, with a 10 nm-thick a-SiO{sub x}:H(p) window-layer. - Highlights: • Low Schottky barrier height benefits fill factor, and open-circuit voltage (V{sub oc}). • High band gap is beneficial for short-circuit current density (J{sub sc}). • Boron doped microcrystalline silicon is a suitable buffer-layer for

  12. A study of a novel coprocessed dry binder composed of α-lactose monohydrate, microcrystalline cellulose and corn starch.

    Science.gov (United States)

    Mužíková, Jitka; Srbová, Alena; Svačinová, Petra

    2017-12-01

    This paper deals with a study of the novel coprocessed dry binder Combilac®, which contains 70% of α-lactose monohydrate, 20% of microcrystalline cellulose and 10% of native corn starch. These tests include flow properties, compressibility, lubricant sensitivity, tensile strength and disintegration time of tablets. Compressibility is evaluated by means of the energy profile of compression process, test of stress relaxation and tablet strength. The above-mentioned parameters are also evaluated in the physical mixture of α-lactose monohydrate, microcrystalline cellulose and native corn starch and compared with Combilac. Combilac shows much better flowability than the physical mixture of the used dry binders. Its compressibility is better, tablets possess a higher tensile strength. Neither Combilac, nor the physical mixture can be compressed without lubricants due to high friction and sticking to the matrix. Combilac has a higher lubricant sensitivity than the physical mixture of the dry binders. Disintegration time of Combilac tablets is comparable with the disintegration time of tablets made from the physical mixture.

  13. Luminescence and optical absorption determination in porous silicon

    International Nuclear Information System (INIS)

    Nogal, U.; Calderon, A.; Marin, E.; Rojas T, J. B.; Juarez, A. G.

    2012-10-01

    We applied the photoacoustic spectroscopy technique in order to obtain the optical absorption spectrum in porous silicon samples prepared by electrochemical anodic etching on n-type, phosphorous doped, (100)-oriented crystal-line silicon wafer with thickness of 300 μm and 1-5 ωcm resistivity. The porous layers were prepared with etching times of 13, 20, 30, 40 and 60 minutes. Also, we realized a comparison among the optical absorption spectrum with the photoluminescence and photo reflectance ones, both obtained at room temperature. Our results show that the absorption spectrum of the samples of porous silicon depends notably of the etching time an it consist of two distinguishable absorption bands, one in the Vis region and the other one in the UV region. (Author)

  14. Nanostructured silicon ferromagnet collected by a permanent neodymium magnet.

    Science.gov (United States)

    Okuno, Takahisa; Thürmer, Stephan; Kanoh, Hirofumi

    2017-11-30

    Nanostructured silicon (N-Si) was prepared by anodic electroetching of p-type silicon wafers. The obtained magnetic particles were separated by a permanent neodymium magnet as a magnetic nanostructured silicon (mN-Si). The N-Si and mN-Si exhibited different magnetic properties: the N-Si exhibited ferromagnetic-like behaviour, whereas the mN-Si exhibited superparamagnetic-like behaviour.

  15. Statistical Optimization for Acid Hydrolysis of Microcrystalline Cellulose and Its Physiochemical Characterization by Using Metal Ion Catalyst

    Directory of Open Access Journals (Sweden)

    Md. Ziaul Karim

    2014-10-01

    Full Text Available Hydrolyzing the amorphous region while keeping the crystalline region unaltered is the key technology for producing nanocellulose. This study investigated if the dissolution properties of the amorphous region of microcrystalline cellulose can be enhanced in the presence of Fe3+ salt in acidic medium. The process parameters, including temperature, time and the concentration of metal chloride catalyst (FeCl3, were optimized by using the response surface methodology (RSM. The experimental observation demonstrated that temperature and time play vital roles in hydrolyzing the amorphous sections of cellulose. This would yield hydrocellulose with higher crystallinity. The factors that were varied for the production of hydrocellulose were the temperature (x1, time (x2 and FeCl3 catalyst concentration (x3. Responses were measured in terms of percentage of crystallinity (y1 and the yield (y2 of the prepared hydrocellulose. Relevant mathematical models were developed. Analysis of variance (ANOVA was carried out to obtain the most significant factors influencing the responses of the percentage of crystallinity and yield. Under optimum conditions, the percentage of crystallinity and yield were 83.46% and 86.98% respectively, at 90.95 °C, 6 h, with a catalyst concentration of 1 M. The physiochemical characteristics of the prepared hydrocellulose were determined in terms of XRD, SEM, TGA and FTIR analyses. The addition of FeCl3 salt in acid hydrolyzing medium is a novel technique for substantially increasing crystallinity with a significant morphological change.

  16. Properties of form-stable paraffin/silicon dioxide/expanded graphite phase change composites prepared by sol–gel method

    International Nuclear Information System (INIS)

    Li, Min; Wu, Zhishen; Tan, Jinmiao

    2012-01-01

    Highlights: ► Paraffin/SiO 2 /EG composite PCM was prepared with sol–gel method. ► The thermal conductivity of SiO 2 /paraffin/EG is 94.7% higher than paraffin. ► The latent heat of paraffin/SiO 2 /EG composite is 104.4 J/g. -- Abstract: A form-stable paraffin/silicon dioxide (SiO 2 )/expanded graphite (EG) composite phase change material (PCM) was prepared by sol–gel method. Silica gel acts as the supporting material and EG is used to increase the thermal conductivity. The mass fractions of silicon oxide and graphite are 20.8% and 7.2%, respectively. The composite PCM was characterized using scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Fourier transformation infrared spectroscopy (FTIR) method. Thermal properties and thermal stability of the composite PCM were studied using differential scanning calorimetry (DSC). The result shows that paraffin was well dispersed in the network of silica gel and there is no chemical reaction between them. The phase change temperature of the paraffin/SiO 2 composite and the paraffin/SiO 2 /EG composite are 27.53 °C and 27.72 °C, respectively. The latent heat of the paraffin/SiO 2 composite and the paraffin/SiO 2 /EG composite are 112.8 J/g and 104.4 J/g, respectively. The thermal conductivity of the SiO 2 /paraffin composite and the SiO 2 /paraffin/EG composite are 28.2% and 94.7% higher than that of paraffin.

  17. High photoconductive hydrogenated silicon by reactive sputtering in helium containing atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Ohbiki, Tohru; Imura, Takeshi; Hiraki, Akio

    1982-08-01

    Mixed phase of amorphous and microcrystalline silicon-hydrogen alloys has been fabricated by reactive sputtering in He containing H/sub 2/ of which mole fraction is less than about 5 mole%. The degree of the crystallization, evaluated by electron microscopy and optical absorption spectroscopy, becomes high as the amount of H/sub 2/ in the atmosphere increases. The conductivity in dark and photoconductivity increase as the partial pressure of H/sub 2/ increases (form 0 to 1 mole%) and also as the pressure during sputtering increases. This increase in conductivity and photoconductivity is supposed to be related to the development of microcrystals. The highest photoconductivity is observed at the H/sub 2/ mole fraction of about 1 mole%. This film contains a small amount of microcrystals and show the photoconductivity higher by 2 orders of magnitude than that in a film sputter-deposited in Ar and H/sub 2/ atmosphere in the same apparatus.

  18. Preparation and Characterization of Silicone Liquid Core/Polymer Shell Microcapsules via Internal Phase Separation

    DEFF Research Database (Denmark)

    Gonzalez, Lidia; Kostrzewska, Malgorzata; Ma, Baoguang

    2014-01-01

    Microcapsules with a silicone liquid core surrounded by a polymeric shell were synthesisedthrough the controlled phase separation. The dispersed silicone phase consisted of the shellpolymer PMMA, a good solvent for the PMMA (dichloromethane, DCM) and a poor solvent(methylhydrosiloxane dimethylsil......Microcapsules with a silicone liquid core surrounded by a polymeric shell were synthesisedthrough the controlled phase separation. The dispersed silicone phase consisted of the shellpolymer PMMA, a good solvent for the PMMA (dichloromethane, DCM) and a poor solvent...

  19. Highly transparent front electrodes with metal fingers for p-i-n thin-film silicon solar cells

    Directory of Open Access Journals (Sweden)

    Moulin Etienne

    2015-01-01

    Full Text Available The optical and electrical properties of transparent conductive oxides (TCOs, traditionally used in thin-film silicon (TF-Si solar cells as front-electrode materials, are interlinked, such that an increase in TCO transparency is generally achieved at the cost of reduced lateral conductance. Combining a highly transparent TCO front electrode of moderate conductance with metal fingers to support charge collection is a well-established technique in wafer-based technologies or for TF-Si solar cells in the substrate (n-i-p configuration. Here, we extend this concept to TF-Si solar cells in the superstrate (p-i-n configuration. The metal fingers are used in conjunction with a millimeter-scale textured foil, attached to the glass superstrate, which provides an antireflective and retroreflective effect; the latter effect mitigates the shadowing losses induced by the metal fingers. As a result, a substantial increase in power conversion efficiency, from 8.7% to 9.1%, is achieved for 1-μm-thick microcrystalline silicon solar cells deposited on a highly transparent thermally treated aluminum-doped zinc oxide layer combined with silver fingers, compared to cells deposited on a state-of-the-art zinc oxide layer.

  20. Effect of environmental conditions on the mechanical properties and fungal degradation of polycaprolactone/microcrystalline cellulose/wood flour composites

    Science.gov (United States)

    Ronald Sabo; Liwei Jin; Nicole Stark; Rebecca E. Ibach

    2013-01-01

    Polycaprolactone (PCL) filled with microcrystalline cellulose (MCC), wood flour (WF), or both were characterized before and after exposure to various environmental conditions for 60 days. PCL/WF composites had the greatest tensile strength and modulus compared to neat PCL or PCL composites containing MCC. Electron microscopy indicated better adhesion between WF...

  1. Solar cells with gallium phosphide/silicon heterojunction

    Science.gov (United States)

    Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

    2015-09-01

    One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

  2. Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics

    Science.gov (United States)

    Acosta, E.; Wight, N. M.; Smirnov, V.; Buckman, J.; Bennett, N. S.

    2018-06-01

    Thermoelectric technology has not yet been able to reach full-scale market penetration partly because most commercial materials employed are scarce/costly, environmentally unfriendly and in addition provide low conversion efficiency. The necessity to tackle some of these hurdles leads us to investigate the suitability of n-type hydrogenated microcrystalline silicon (μc-Si: H) in the fabrication of thermoelectric devices, produced by plasma enhanced chemical vapour deposition (PECVD), which is a mature process of proven scalability. This study reports an approach to optimise the thermoelectric power factor (PF) by varying the dopant concentration by means of post-annealing without impacting film morphology, at least for temperatures below 550°C. Results show an improvement in PF of more than 80%, which is driven by a noticeable increase of carrier mobility and Seebeck coefficient in spite of a reduction in carrier concentration. A PF of 2.08 × 10-4 W/mK2 at room temperature is reported for n-type films of 1 μm thickness, which is in line with the best values reported in recent literature for similar structures.

  3. Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics

    Science.gov (United States)

    Acosta, E.; Wight, N. M.; Smirnov, V.; Buckman, J.; Bennett, N. S.

    2017-11-01

    Thermoelectric technology has not yet been able to reach full-scale market penetration partly because most commercial materials employed are scarce/costly, environmentally unfriendly and in addition provide low conversion efficiency. The necessity to tackle some of these hurdles leads us to investigate the suitability of n-type hydrogenated microcrystalline silicon (μc-Si: H) in the fabrication of thermoelectric devices, produced by plasma enhanced chemical vapour deposition (PECVD), which is a mature process of proven scalability. This study reports an approach to optimise the thermoelectric power factor (PF) by varying the dopant concentration by means of post-annealing without impacting film morphology, at least for temperatures below 550°C. Results show an improvement in PF of more than 80%, which is driven by a noticeable increase of carrier mobility and Seebeck coefficient in spite of a reduction in carrier concentration. A PF of 2.08 × 10-4 W/mK2 at room temperature is reported for n-type films of 1 μm thickness, which is in line with the best values reported in recent literature for similar structures.

  4. Preparation of electromechanically active silicone composites and some evaluations of their suitability for biomedical applications

    International Nuclear Information System (INIS)

    Iacob, Mihail; Bele, Adrian; Patras, Xenia; Pasca, Sorin; Butnaru, Maria; Alexandru, Mihaela; Ovezea, Dragos; Cazacu, Maria

    2014-01-01

    Some films based on electromechanically active polymer composites have been prepared. Polydimethylsiloxane-α,ω-diols (PDMSs) having different molecular masses (Mv = 60 700 and Mv = 44 200) were used as matrix in which two different active fillers were incorporated: titanium dioxide in situ generated from its titanium isopropoxide precursor and silica particles functionalized with polar aminopropyl groups on surface. A reference sample based on simple crosslinked PDMS was also prepared. The composites processed as films were investigated to evaluate their ability to act as efficient electromechanical actuators for potential biomedical application. Thus, the surface morphology of interest for electrodes compliance was analysed by atomic force microscopy. Mechanical and dielectric characteristics were evaluated by tensile tests and dielectric spectroscopy, respectively. Electromechanical actuation responses were measured by interferometry. The biocompatibility of the obtained materials has been verified through tests in vitro and, for valuable films, in vivo. The experimental, clinical and anatomopathological evaluation of the in vivo tested samples did not reveal significant pathological modifications. - Highlights: • Silicone composites differing by the filler and matrix characteristics were prepared. • Stress–strain curves were registered in normal and cyclic modes for composite films. • The dielectric permittivity, dielectric loss, and conductivity were determined. • Electromechanical response of the films was measured at an applied voltage. • Some biocompatibility tests, both in vitro and in vivo, were performed

  5. Preparation of electromechanically active silicone composites and some evaluations of their suitability for biomedical applications

    Energy Technology Data Exchange (ETDEWEB)

    Iacob, Mihail; Bele, Adrian [“Petru Poni” Institute of Macromolecular Chemistry, Aleea Gr. Ghica Voda 41A, Iasi 700487 (Romania); Patras, Xenia [“Apollonia” University, 2 Muzicii Street, 700511 Iasi (Romania); Pasca, Sorin [“Ion Ionescu de la Brad” University of Agricultural Sciences and Veterinary Medicine Iaşi, Aleea Mihail Sadoveanu nr. 3, Iasi 700490 (Romania); Butnaru, Maria [“Gr. T. Popa” University of Medicine and Pharmacy, Faculty of Medical Bioengineering, 16 University Street, 700115 Iasi (Romania); Alexandru, Mihaela [“Petru Poni” Institute of Macromolecular Chemistry, Aleea Gr. Ghica Voda 41A, Iasi 700487 (Romania); Ovezea, Dragos [National Institute for Research and Development in Electrical Engineering ICPE-CA, 313 Splaiul Unirii, Bucharest 030138 (Romania); Cazacu, Maria, E-mail: mcazacu@icmpp.ro [“Petru Poni” Institute of Macromolecular Chemistry, Aleea Gr. Ghica Voda 41A, Iasi 700487 (Romania)

    2014-10-01

    Some films based on electromechanically active polymer composites have been prepared. Polydimethylsiloxane-α,ω-diols (PDMSs) having different molecular masses (Mv = 60 700 and Mv = 44 200) were used as matrix in which two different active fillers were incorporated: titanium dioxide in situ generated from its titanium isopropoxide precursor and silica particles functionalized with polar aminopropyl groups on surface. A reference sample based on simple crosslinked PDMS was also prepared. The composites processed as films were investigated to evaluate their ability to act as efficient electromechanical actuators for potential biomedical application. Thus, the surface morphology of interest for electrodes compliance was analysed by atomic force microscopy. Mechanical and dielectric characteristics were evaluated by tensile tests and dielectric spectroscopy, respectively. Electromechanical actuation responses were measured by interferometry. The biocompatibility of the obtained materials has been verified through tests in vitro and, for valuable films, in vivo. The experimental, clinical and anatomopathological evaluation of the in vivo tested samples did not reveal significant pathological modifications. - Highlights: • Silicone composites differing by the filler and matrix characteristics were prepared. • Stress–strain curves were registered in normal and cyclic modes for composite films. • The dielectric permittivity, dielectric loss, and conductivity were determined. • Electromechanical response of the films was measured at an applied voltage. • Some biocompatibility tests, both in vitro and in vivo, were performed.

  6. Comparative evaluation of the powder and compression properties of various grades and brands of microcrystalline cellulose by multivariate methods.

    Science.gov (United States)

    Haware, Rahul V; Bauer-Brandl, Annette; Tho, Ingunn

    2010-01-01

    The present work challenges a newly developed approach to tablet formulation development by using chemically identical materials (grades and brands of microcrystalline cellulose). Tablet properties with respect to process and formulation parameters (e.g. compression speed, added lubricant and Emcompress fractions) were evaluated by 2(3)-factorial designs. Tablets of constant true volume were prepared on a compaction simulator at constant pressure (approx. 100 MPa). The highly repeatable and accurate force-displacement data obtained was evaluated by simple 'in-die' Heckel method and work descriptors. Relationships and interactions between formulation, process and tablet parameters were identified and quantified by multivariate analysis techniques; principal component analysis (PCA) and partial least square regressions (PLS). The method proved to be able to distinguish between different grades of MCC and even between two different brands of the same grade (Avicel PH 101 and Vivapur 101). One example of interaction was studied in more detail by mixed level design: The interaction effect of lubricant and Emcompress on elastic recovery of Avicel PH 102 was demonstrated to be complex and non-linear using the development tool under investigation.

  7. Evidence of localized amorphous silicon clustering from Raman depth-probing of silicon nanocrystals in fused silica

    International Nuclear Information System (INIS)

    Barba, D; Martin, F; Ross, G G

    2008-01-01

    Silicon nanocrystals (Si-nc) and amorphous silicon (α-Si) produced by silicon implantation in fused silica have been studied by micro-Raman spectroscopy. Information regarding the Raman signature of the α-Si phonon excitation was extracted from Raman depth-probing measurements using the phenomenological phonon confinement model. The spectral deconvolution of the Raman measurements recorded at different laser focusing depths takes into account both the Si-nc size variation and the Si-nc spatial distribution within the sample. The phonon peak associated with α-Si around 470 cm -1 is greatest for in-sample laser focusing, indicating that the formation of amorphous silicon is more important in the region containing a high concentration of silicon excess, where large Si-nc are located. As also observed for Si-nc systems prepared by SiO x layer deposition, this result demonstrates the presence of α-Si in high excess Si implanted Si-nc systems

  8. Porous silicon nanoparticles for target drag delivery: structure and morphology

    International Nuclear Information System (INIS)

    Spivak, Yu M; Belorus, A O; Somov, P A; Bespalova, K A; Moshnikov, V A; Tulenin, S S

    2015-01-01

    Nanoparticles of porous silicon were obtained by electrochemical anodic etching. Morphology and structure of the particles was investigated by means dynamic light scattering and scanning electron microscopy. The influence of technological conditions of preparation on geometrical parameters of the porous silicon particles (particle size distribution, pore shape and size, the specific surface area of the porous silicon) is discussed. (paper)

  9. Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Jaran Sritharathikhun

    2014-01-01

    Full Text Available This paper reports the preparation of wide gap p-type hydrogenated microcrystalline silicon oxide (p-μc-SiO:H films using a 40 MHz very high frequency plasma enhanced chemical vapor deposition technique. The reported work focused on the effects of the CO2/SiH4 ratio on the properties of p-μc-SiO:H films and the effectiveness of the films as an emitter layer of crystalline silicon heterojunction (c-Si-HJ solar cells. A p-μc-SiO:H film with a wide optical band gap (E04, 2.1 eV, can be obtained by increasing the CO2/SiH4 ratio; however, the tradeoff between E04 and dark conductivity must be considered. The CO2/SiH4 ratio of the p-μc-SiO:H emitter layer also significantly affects the performance of the solar cells. Compared to the cell using p-μc-Si:H (CO2/SiH4 = 0, the cell with the p-μc-SiO:H emitter layer performs more efficiently. We have achieved the highest efficiency of 18.3% with an open-circuit voltage (Voc of 692 mV from the cell using the p-μc-SiO:H layer. The enhancement in the Voc and the efficiency of the solar cells verified the potential of the p-μc-SiO:H films for use as the emitter layer in c-Si-HJ solar cells.

  10. Release of low molecular weight silicones and platinum from silicone breast implants.

    Science.gov (United States)

    Lykissa, E D; Kala, S V; Hurley, J B; Lebovitz, R M

    1997-12-01

    We have conducted a series of studies addressing the chemical composition of silicone gels from breast implants as well as the diffusion of low molecular weight silicones (LM-silicones) and heavy metals from intact implants into various surrounding media, namely, lipid-rich medium (soy oil), aqueous tissue culture medium (modified Dulbecco's medium, DMEM), or an emulsion consisting of DMEM plus 10% soy oil. LM-silicones in both implants and surrounding media were detected and quantitated using gas chromatography (GC) coupled with atomic emission (GC-AED) as well as mass spectrometric (GC/MS) detectors, which can detect silicones in the nanogram range. Platinum, a catalyst used in the preparation of silicone gels, was detected and quantitated using inductive argon-coupled plasma/mass spectrometry (ICP-MS), which can detect platinum in the parts per trillion range. Our results indicate that GC-detectable low molecular weight silicones contribute approximately 1-2% to the total gel mass and consist predominantly of cyclic and linear poly-(dimethylsiloxanes) ranging from 3 to 20 siloxane [(CH3)2-Si-O] units (molecular weight 200-1500). Platinum can be detected in implant gels at levels of approximately 700 micrograms/kg by ICP-MS. The major component of implant gels appears to be high molecular weight silicone polymers (HM-silicones) too large to be detected by GC. However, these HM-silicones can be converted almost quantitatively (80% by mass) to LM-silicones by heating implant gels at 150-180 degrees C for several hours. We also studied the rates at which LM-silicones and platinum leak through the intact implant outer shell into the surrounding media under a variety of conditions. Leakage of silicones was greatest when the surrounding medium was lipid-rich, and up to 10 mg/day LM-silicones was observed to diffuse into a lipid-rich medium per 250 g of implant at 37 degrees C. This rate of leakage was maintained over a 7-day experimental period. Similarly, platinum was

  11. Preparing hydroxyapatite-silicon composite suspensions with homogeneous distribution of multi-walled carbon nano-tubes for electrophoretic coating of NiTi bone implant and their effect on the surface morphology

    International Nuclear Information System (INIS)

    Khalili, Vida; Khalil-Allafi, Jafar; Xia, Wei; Parsa, Alireza B.; Frenzel, Jan; Somsen, Christoph; Eggeler, Gunther

    2016-01-01

    Graphical abstract: - Highlights: • The stable composite suspensions of hydroxyapatite, silicon and multi-walled carbon nano-tubes was prepared using functionalization of and multi-walled carbon nano-tubes in HNO_3 vapor and triethanolamine as dispersing agent. • The zeta potential of composite suspensions is less than that of hydroxyapatite suspension. • The silicon particles presence in suspension causes to decrease the charge carrier in suspension and current density during electrophoretic deposition. • The orientation of multi-walled carbon nano-tubes to parallel direction of the applied electric field during electrophoretic deposition can facilitate their moving towards the cathode and increase current density. • The more zeta potential of suspension, the lower roughness of coatings during electrophoretic deposition. - Abstract: Preparing a stable suspension is a main step towards the electrophoretically depositing of homogeneous and dense composite coatings on NiTi for its biomedical application. In the present study, different composite suspensions of hydroxyapatite, silicon and multi-walled carbon nano-tubes were prepared using n-butanol and triethanolamine as media and dispersing agent, respectively. Multi-walled carbon nanotubes were first functionalized in the nitric acid vapor for 15 h at 175 °C, and then mixed into suspensions. Thermal desorption spectroscopy profiles indicate the formation of functional groups on multi-walled carbon nano-tubes. An excellent suspension stability can be achieved for different amounts of triethanolamine. The amount of triethanolamine can be increased by adding a second component to a stable hydroxyapatite suspension due to an electrostatic interaction between components in suspension. The stability of composite suspension is less than that of the hydroxyapatite suspension, due to density differences, which under the gravitational force promote the demixing. The scanning electron microscopy images of the

  12. Esterification of microcrystalline cellulose by binary mixture of pyromellitic dianhydride and boric acid

    International Nuclear Information System (INIS)

    Arslanov, Sh.S.; Petropavlovskij, G.A.

    1996-01-01

    The reaction between microcrystalline cellulose and boric acid in the medium of dimethyl-sulfoxide (DMSO) and in solid phase has been studied. By the methods of IR and 1 H NMR spectroscopy it has been shown that the triatment of cellulose with boric acid solution in DMSO, while the latter is removed under vacuum conditions and cellulose is heated up to 170 deg C, gives rise to formation of unstable esters of cellulose and boric acid. Pyromellitate-borates of cellulose are formed in the course of cellulose reaction with a mixture of boric acid and pyromellite dianhydride. 9 refs., 3 figs., 1 tab

  13. Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition.

    Science.gov (United States)

    Jia, Endong; Zhou, Chunlan; Wang, Wenjing

    2015-01-01

    Plasma-enhanced atom layer deposition (PEALD) can deposit denser films than those prepared by thermal ALD. But the improvement on thickness uniformity and the decrease of defect density of the films deposited by PEALD need further research. A PEALD process from trimethyl-aluminum (TMA) and oxygen plasma was investigated to study the influence of the conditions with different plasma powers and deposition temperatures on uniformity and growth rate. The thickness and refractive index of films were measured by ellipsometry, and the passivation effect of alumina on n-type silicon before and after annealing was measured by microwave photoconductivity decay method. Also, the effects of deposition temperature and annealing temperature on effective minority carrier lifetime were investigated. Capacitance-voltage and conductance-voltage measurements were used to investigate the interface defect density of state (D it) of Al2O3/Si. Finally, Al diffusion P(+) emitter on n-type silicon was passivated by PEALD Al2O3 films. The conclusion is that the condition of lower substrate temperature accelerates the growth of films and that the condition of lower plasma power controls the films' uniformity. The annealing temperature is higher for samples prepared at lower substrate temperature in order to get the better surface passivation effects. Heavier doping concentration of Al increased passivation quality after annealing by the effective minority carrier lifetime up to 100 μs.

  14. New techniques used to realize silicon photocells

    International Nuclear Information System (INIS)

    Siffert, P.

    1978-01-01

    The techniques used to realize the terrestrial silicon solar cells being considered the possible improvements of these methods are discussed. The various approaches under development to prepare silicon sheets in a continuous way are considered for both self-supporting or substrate deposited layers. Finally, the various methods used or under investigation to obtain the surface potential barrier are considered; MIS, heterojunction and ion implantation [fr

  15. Modification and characterization of microcrystalline cellulose with succinic anhydride

    International Nuclear Information System (INIS)

    Santos, Clecio M.R.; Santos, Douglas C.; Freitas, Gizele B.; Cardoso, Giselia

    2011-01-01

    Cellulose is a natural polymer, non-toxic, biodegradable and renewable source. With increasing global attention to environmental problems, the chemical modification of cellulose has been evaluated with increasing applicability in various industrial sectors. The cellulose can be chemical modified through the hydroxyl present in their molecules. This paper aims to present the main results in the modification of microcrystalline cellulose. The sample was pure and modified chemically and morphologically characterized by absorption spectroscopy in the infrared (IR) and showed the band in the 1551cm -1 characterization modification made, X-ray diffraction (XRD) where it was observed that the change led to a reduction significant crystallinity, and determination of average pore radius through the analyzer porosity and surface area resulting in values of 6.97 angstrom for pure sample and 8.62 angstrom for the modified. In addition to these tests we determined the average degree of substitution finding the value of 1.67. (author)

  16. Influence of nanometric silicon carbide on phenolic resin composites ...

    Indian Academy of Sciences (India)

    Abstract. This paper presents a preliminary study on obtaining and characterization of phenolic resin-based com- posites modified with nanometric silicon carbide. The nanocomposites were prepared by incorporating nanometric silicon carbide (nSiC) into phenolic resin at 0.5, 1 and 2 wt% contents using ultrasonication to ...

  17. Influence of alkaline hydrogen peroxide pre-hydrolysis on the isolation of microcrystalline cellulose from oil palm fronds.

    Science.gov (United States)

    Owolabi, Abdulwahab F; Haafiz, M K Mohamad; Hossain, Md Sohrab; Hussin, M Hazwan; Fazita, M R Nurul

    2017-02-01

    In the present study, microcrystalline cellulose (MCC) was isolated from oil palm fronds (OPF) using chemo-mechanical process. Wherein, alkaline hydrogen peroxide (AHP) was utilized to extract OPF fibre at different AHP concentrations. The OPF pulp fibre was then bleached with acidified sodium chlorite solution followed by the acid hydrolysis using hydrochloric acid. Several analytical methods were conducted to determine the influence of AHP concentration on thermal properties, morphological properties, microscopic and crystalline behaviour of isolated MCC. Results showed that the MCC extracted from OPF fibres had fibre diameters of 7.55-9.11nm. X-ray diffraction (XRD) analyses revealed that the obtained microcrystalline fibre had both celluloses I and cellulose II polymorphs structure, depending on the AHP concentrations. The Fourier transmission infrared (FTIR) analyses showed that the AHP pre-hydrolysis was successfully removed hemicelluloses and lignin from the OPF fibre. The crystallinity of the MCC was increased with the AHP concentrations. The degradation temperature of MCC was about 300°C. The finding of the present study showed that pre-treatment process potentially influenced the quality of the isolation of MCC from oil palm fronds. Copyright © 2016 Elsevier B.V. All rights reserved.

  18. Metallization of DNA on silicon surface

    International Nuclear Information System (INIS)

    Puchkova, Anastasiya Olegovna; Sokolov, Petr; Petrov, Yuri Vladimirovich; Kasyanenko, Nina Anatolievna

    2011-01-01

    New simple way for silver deoxyribonucleic acid (DNA)-based nanowires preparation on silicon surface was developed. The electrochemical reduction of silver ions fixed on DNA molecule provides the forming of tightly matched zonate silver clusters. Highly homogeneous metallic clusters have a size about 30 nm. So the thickness of nanowires does not exceed 30–50 nm. The surface of n-type silicon monocrystal is the most convenient substrate for this procedure. The comparative analysis of DNA metallization on of n-type silicon with a similar way for nanowires fabrication on p-type silicon, freshly cleaved mica, and glass surface shows the advantage of n-type silicon, which is not only the substrate for DNA fixation but also the source of electrons for silver reduction. Images of bound DNA molecules and fabricated nanowires have been obtained using an atomic force microscope and a scanning ion helium microscope. DNA interaction with silver ions in a solution was examined by the methods of ultraviolet spectroscopy and circular dichroism.

  19. Sulfur-induced offsets in MC-ICP-MS silicon-isotope measurements

    NARCIS (Netherlands)

    van den Boorn, S.; Vroon, P.Z.; van Bergen, M.J.

    2009-01-01

    Sample preparation methods for MC-ICP-MS silicon-isotope measurements often involve a cation-exchange purification step. A previous study has argued that this would suffice for geological materials, as the occasional enrichment of anionic species would not compromise silicon-isotope analysis. Here

  20. Sulphur-induced offsets in MC-ICP-MS silicon-isotope measurements

    NARCIS (Netherlands)

    van den Boorn, S.; Vroon, P.Z.; van Bergen, M.J.

    2010-01-01

    Sample preparation methods for MC-ICP-MS silicon-isotope measurements often involve a cation-exchange purification step. A previous study has argued that this would suffice for geological materials, as the occasional enrichment of anionic species would not compromise silicon-isotope analysis. Here

  1. Photoluminescence Enhancement of Silole-Capped Silicon Quantum Dots Based on Förster Resonance Energy Transfer.

    Science.gov (United States)

    Kim, Seongwoong; Kim, Sungsoo; Ko, Young Chun; Sohn, Honglae

    2015-07-01

    Photoluminescent porous silicon were prepared by an electrochemical etch of n-type silicon under the illumination with a 300 W tungsten filament bulb for the duration of etch. The red photoluminescence emitting at 650 nm with an excitation wavelength of 450 nm is due to the quantum confinement of silicon quantum dots in porous silicon. HO-terminated red luminescent PS was obtained by an electrochemical treatment of fresh PS with the current of 150 mA for 60 seconds in water and sodium chloride. As-prepared PS was sonicated, fractured, and centrifuged in toluene solution to obtain photoluminescence silicon quantum dots. Dichlorotetraphenylsilole exhibiting an emission band at 520 nm was reacted with HO-terminated silicon quantum dots to give a silole-capped silicon quantum dots. The optical characterization of silole-derivatized silicon quantum dots was investigated by UV-vis and fluorescence spectrometer. The fluorescence emission efficiency of silole-capped silicon quantum dots was increased by about 2.5 times due to F6rster resonance energy transfer from silole moiety to silicon quantum dots.

  2. Characterization of Amorphous Silicon Advanced Materials and PV Devices: Final Technical Report, 15 December 2001--31 January 2005

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, P. C.

    2005-11-01

    The major objectives of this subcontract have been: (1) understand the microscopic properties of the defects that contribute to the Staebler-Wronski effect to eliminate this effect, (2) perform correlated studies on films and devices made by novel techniques, especially those with promise to improve stability or deposition rates, (3) understand the structural, electronic, and optical properties of films of hydrogenated amorphous silicon (a-Si:H) made on the boundary between the amorphous and microcrystalline phases, (4) search for more stable intrinsic layers of a-Si:H, (5) characterize the important defects, impurities, and metastabilities in the bulk and at surfaces and interfaces in a-Si:H films and devices and in important alloy systems, and (6) make state-of-the-art plasma-enhanced chemical vapor deposition (PECVD) devices out of new, advanced materials, when appropriate. All of these goals are highly relevant to improving photovoltaic devices based on a-Si:H and related alloys. With regard to the first objective, we have identified a paired hydrogen site that may be the defect that stabilizes the silicon dangling bonds formed in the Staebler-Wronski effect.

  3. Diagenetic Microcrystalline Opal Varieties from the Monterey Formation, CA: HRTEM Study of Structures and Phase Transformation Mechanisms

    Science.gov (United States)

    Cady, Sherry L.; Wenk, H.-R.; DeVincenzi, Don (Technical Monitor)

    1994-01-01

    Microcrystalline opal varieties form as intermediary precipitates during the diagenetic transformation of biogenically precipitated non-crystalline opal (opal-A) to microquartz. With regard to the Monterey Formation of California, X-ray powder diffraction studies have shown that a decrease in the primary d-spacing of opal-CT toward that of cristobalite occurs with increasing diagenesis. The initial timing of opal-CT/quartz formation and the value of the primary opal-CT d-spacing, are influenced by the sediment. lithology. Transmission electron microscopy methods (CTEM/HRTEM) were used to investigate the structure of the diagenetic phases and establish transformation mechanisms between the varieties of microcrystalline opals in charts and porcelanites from the Monterey Formation. HRTEM images revealed that the most common fibrous varieties of microcrystalline opals contain varying amounts of structural disorder. Finite lamellar units of cristobalite-and tridymite-type. layer sequences were found to be randomly stacked in a direction perpendicular to the fiber axis. Disordered and ordered fibers were found to have coprecipitated within the same radial fiber bundles that formed within the matrix of the Most siliceous samples. HRTEM images, which reveal that the fibers within radial and lepispheric fiber bundles branch non-crystallographically, support an earlier proposal that microspheres in chert grow via a spherulitic growth mechanism. A less common variety of opal-CT was found to be characterized by non-parallel (low-angle) stacking sequences that often contain twinned lamellae. Tabular-shaped crystals of orthorhombic tridymite (PO-2) were also identified in the porcelanite samples. A shift in the primary d-spacing of opal-CT has been interpreted as an indication of solid-state ordering g toward a predominantly cristobalite structure, (opal-C). Domains of opal-C were identified as topotactically-oriented overgrowths on discrete Sections of opal-CT fibers and as

  4. A p-silicon nanowire/n-ZnO thin film heterojunction diode prepared by thermal evaporation

    International Nuclear Information System (INIS)

    Hazra, Purnima; Jit, S.

    2014-01-01

    This paper represents the electrical and optical characteristics of a SiNW/ZnO heterojunction diode and subsequent studies on the photodetection properties of the diode in the ultraviolet (UV) wavelength region. In this work, silicon nanowire arrays were prepared on p-type (100)-oriented Si substrate by an electroless metal deposition and etching method with the help of ultrasonication. After that, catalyst-free deposition of zinc oxide (ZnO) nanowires on a silicon nanowire (SiNW) array substrate was done by utilizing a simple and cost-effective thermal evaporation technique without using a buffer layer. The SEM and XRD techniques are used to show the quality of the as-grown ZnO nanowire film. The junction properties of the diode are evaluated by measuring current—voltage and capacitance—voltage characteristics. The diode has a well-defined rectifying behavior with a rectification ratio of 190 at ±2 V, turn-on voltage of 0.5 V, and barrier height is 0.727 eV at room temperature under dark conditions. The photodetection parameters of the diode are investigated in the bias voltage range of ±2 V. The diode shows responsivity of 0.8 A/W at a bias voltage of 2 V under UV illumination (wavelength = 365 nm). The characteristics of the device indicate that it can be used for UV detection applications in nano-optoelectronic and photonic devices. (semiconductor devices)

  5. Method of production of hollow silicon nitride articles

    International Nuclear Information System (INIS)

    Parr, N.L.; Brown, R.L.

    1971-01-01

    The hollow articles prepared according to the invention have a high density, exhibit no internal stresses and correspond to high demands of tolerance and surface quality. One obtains these by flame spraying silicon powder on a pre-heated form designed with separating agent - e.g. NaCl. After removing the form, the silicon is nitridated to silicon nitride by heating in N 2 or in an atmosphere of ammonia. This process can be interrupted if the article is also to be mechanically processed, and then the nitridation can be completed. (Hoe/LH) [de

  6. Synthesis of porous silicon nano-wires and the emission of red luminescence

    International Nuclear Information System (INIS)

    Congli, Sun; Hao, Hu; Huanhuan, Feng; Jingjing, Xu; Yu, Chen; Yong, Jin; Zhifeng, Jiao; Xiaosong, Sun

    2013-01-01

    This very paper is focusing on the characterization of porous silicon nano-wires prepared via a two-step route, the electroless chemical etching and the following post-treatment of HF/HNO 3 solution. Hence, scanning electron microscopy, transmission electron microscopy and confocal fluorescence microscopy are employed for this purpose. From the results of experiments, one can find that the as-prepared silicon nano-wire is of smooth surface and that no visible photo-luminescence emission could be seen. However, the porous structure can be found in the silicon nano-wire treated with HF/HNO 3 solution, and the clear photo-luminescence emission of 630 nm can be recorded with a confocal fluorescence microscope. The transmission electron microscopy test tells that the porous silicon nano-wire is made up of a porous crystalline silicon nano-core and a rough coating of silicon oxide. Besides, based on the post-HF- and -H 2 O 2 - treatments, the emission mechanism of the red luminescence has been discussed and could be attributed to the quantum confinement/luminescence center model which could be simply concluded as that the electron–hole pairs are mainly excited inside the porous silicon nano-core and then tunneling out and recombining at the silicon oxide coating.

  7. Synthesis of porous silicon nano-wires and the emission of red luminescence

    Energy Technology Data Exchange (ETDEWEB)

    Congli, Sun [School of Materials Science and Engineering, Sichuan University (China); Hao, Hu [National Engineering Research Center for Biomaterials, Sichuan University, Chengdu 610064, Sichuan (China); Huanhuan, Feng; Jingjing, Xu; Yu, Chen; Yong, Jin; Zhifeng, Jiao [School of Materials Science and Engineering, Sichuan University (China); Xiaosong, Sun, E-mail: sunxs@scu.edu.cn [School of Materials Science and Engineering, Sichuan University (China)

    2013-10-01

    This very paper is focusing on the characterization of porous silicon nano-wires prepared via a two-step route, the electroless chemical etching and the following post-treatment of HF/HNO{sub 3} solution. Hence, scanning electron microscopy, transmission electron microscopy and confocal fluorescence microscopy are employed for this purpose. From the results of experiments, one can find that the as-prepared silicon nano-wire is of smooth surface and that no visible photo-luminescence emission could be seen. However, the porous structure can be found in the silicon nano-wire treated with HF/HNO{sub 3} solution, and the clear photo-luminescence emission of 630 nm can be recorded with a confocal fluorescence microscope. The transmission electron microscopy test tells that the porous silicon nano-wire is made up of a porous crystalline silicon nano-core and a rough coating of silicon oxide. Besides, based on the post-HF- and -H{sub 2}O{sub 2}- treatments, the emission mechanism of the red luminescence has been discussed and could be attributed to the quantum confinement/luminescence center model which could be simply concluded as that the electron–hole pairs are mainly excited inside the porous silicon nano-core and then tunneling out and recombining at the silicon oxide coating.

  8. Photopolymerizable silicone monomers, oligomers, and resins

    International Nuclear Information System (INIS)

    Jacobine, A.F.; Nakos, S.T.

    1992-01-01

    The purpose of this chapter is to acquaint the general photopolymer researcher with the historical development of the chemistry and technology of photopolymerizable silicone monomers, fluids, and resins. The current status of research in these areas is assessed. The focus of this chapter is not only on the polymer chemistry and application of this technology, but also on important aspects of the synthetic chemistry involved in the preparation of UV-curable silicone monomers, oligomers, and resins. 236 refs., 6 tabs

  9. Electrochemical characteristics of porous TiO2 encapsulated silicon anode

    International Nuclear Information System (INIS)

    Jeon, Bup Ju; Lee, Joong Kee

    2011-01-01

    Graphical abstract: Cycling performances of the TiO 2 coated silicon anode at different catalyst pH values. Display Omitted Highlights: → TiO 2 coated silicon was used as the anode material for lithium batteries. → TiO 2 layer acted as a buffer layer for reducing the volume expansion. → Pore size distribution of TiO 2 coated silicon influenced discharge capacity. → Higher capacity retention was exhibited at pH 10.7. - Abstract: TiO 2 coated silicon, which was prepared by the modified sol-gel method, was employed as the anode material for lithium secondary batteries and the relationship between the diffusivity and electrochemical characteristics was investigated. The results showed that the physical properties of the samples, such as their diffusivity and pore size distribution, enhanced the cycling efficiency of the TiO 2 coated silicon, probably due to the reduction of the side reactions, which may be closely related to the pore size distribution of the TiO 2 coating layer. The pore size of the coating layer plays an important role in retarding the lithium ion diffusion. In the experimental range studied herein, higher capacity retention was exhibited for the TiO 2 coated silicon prepared at pH 10.7.

  10. Effect of porous silicon on the performances of silicon solar cells during the porous silicon-based gettering procedure

    Energy Technology Data Exchange (ETDEWEB)

    Nouri, H.; Bessais, B. [Laboratoire de Nanomateriaux et des Systemes pour l' Energie, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia); Bouaicha, M. [Laboratoire de Photovoltaique, des Semi-conducteurs et des Nanostructures, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2009-10-15

    In this work we analyse the effect of porous silicon on the performances of multicrystalline silicon (mc-Si) solar cells during the porous silicon-based gettering procedure. This procedure consists of forming PS layers on both front and back sides of the mc-Si wafers followed by an annealing in an infrared furnace under a controlled atmosphere at different temperatures. Three sets of samples (A, B and C) have been prepared; for samples A and B, the PS films were removed before and after annealing, respectively. In order to optimize the annealing temperature, we measure the defect density at a selected grain boundary (GB) using the dark current-voltage (I-V) characteristics across the GB itself. The annealing temperature was optimized to 1000 C. The effect of these treatments on the performances of mc-Si solar cells was studied by means of the current-voltage characteristic (at AM 1.5) and the internal quantum efficiency (IQE). The results obtained for cell A and cell B were compared to those obtained on a reference cell (C). (author)

  11. Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

    Science.gov (United States)

    Dhar, Sukanta; Mandal, Sourav; Das, Gourab; Mukhopadhyay, Sumita; Pratim Ray, Partha; Banerjee, Chandan; Barua, Asok Kumar

    2015-08-01

    A novel fluorinated phosphorus doped silicon oxide based nanocrystalline material have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) Czochralski (CZ) wafers. The n-type nc-SiO:F:H material were deposited by radio frequency plasma enhanced chemical vapor deposition. Deposited films were characterized in detail by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), Raman, fourier transform infrared spectroscopy (FTIR) and optoelectronics properties have been studied using temperature dependent conductivity measurement, Ellipsometry, UV-vis spectrum analysis etc. It is observed that the cell fabricated with fluorinated silicon oxide emitter showing higher initial efficiency (η = 15.64%, Jsc = 32.10 mA/cm2, Voc = 0.630 V, FF = 0.77) for 1 cm2 cell area compare to conventional n-a-Si:H emitter (14.73%) on flat c-Si wafer. These results indicate that n type nc-SiO:F:H material is a promising candidate for heterojunction solar cell on p-type crystalline wafers. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (<500 nm).

  12. Spherical composite particles of rice starch and microcrystalline cellulose: A new coprocessed excipient for direct compression

    OpenAIRE

    Limwong, Vasinee; Sutanthavibul, Narueporn; Kulvanich, Poj

    2004-01-01

    Composite particles of rice starch (RS) and microcrystalline cellulose were fabricated by spray-drying technique to be used as a directly compressible excipient. Two size fractions of microcry stalline cellulose, sieved (MCS) and jet milled (MCJ), having volumetric mean diameter (D50) of 13.61 and 40.51 μm, respectively, were used to form composite particles with RS in various mixing ratios. The composite particles produced were evaluated for their powder and compression properties. Although ...

  13. Large-scale synthesis of double cauliflower-like Sb{sub 2}S{sub 3} microcrystallines by hydrothermal method

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Lei [Key Laboratory for Soft Chemistry and Functional Materials, Ministry of Education (China); Xu, Hanyue [School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Han, Qiaofeng, E-mail: hanqiaofeng@njust.edu.cn [Key Laboratory for Soft Chemistry and Functional Materials, Ministry of Education (China); Wang, Xin [Key Laboratory for Soft Chemistry and Functional Materials, Ministry of Education (China)

    2013-09-25

    Highlights: •Highly uniform double cauliflower-like Sb{sub 2}S{sub 3} particles were synthesized via hydrothermal method. •Influence of reaction conditions on the morphology of the products was discussed. •Double cauliflower-like Sb{sub 2}S{sub 3} superstructures revealed broad spectrum response. -- Abstract: The double cauliflower-like Sb{sub 2}S{sub 3} superstructures assembled by nanorods were prepared using SbCl{sub 3} and Na{sub 2}S⋅9H{sub 2}O as raw materials, dodecyltrimethylammonium bromide (DTAB, C{sub 15}H{sub 31}BrN) as surfactant under acidic condition at 180 °C for 30 h. The structure, morphology and composition of the product were characterized by X-ray diffraction pattern (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and energy diffraction spectroscopy (EDS). The effect of reaction conditions including temperature, reaction time and surfactants on the sample morphology was discussed and a possible mechanism for the formation of cauliflower-like Sb{sub 2}S{sub 3} was proposed. The cauliflower-like Sb{sub 2}S{sub 3} microcrystallines revealed broad spectrum response, which may have a good application prospect in solar energy utilization and photoelectric conversion fields.

  14. Silicon nanoparticles produced by spark discharge

    International Nuclear Information System (INIS)

    Vons, Vincent A.; Smet, Louis C. P. M. de; Munao, David; Evirgen, Alper; Kelder, Erik M.; Schmidt-Ott, Andreas

    2011-01-01

    On the example of silicon, the production of nanoparticles using spark discharge is shown to be feasible for semiconductors. The discharge circuit is modelled as a damped oscillator circuit. This analysis reveals that the electrode resistance should be kept low enough to limit energy loss by Joule heating and to enable effective nanoparticle production. The use of doped electrodes results in a thousand-fold increase in the mass production rate as compared to intrinsic silicon. Pure and oxidised uniformly sized silicon nanoparticles with a primary particle diameter of 3–5 nm are produced. It is shown that the colour of the particles can be used as a good indicator of the oxidation state. If oxygen and water are banned from the spark generation system by (a) gas purification, (b) outgassing and (c) by initially using the particles produced as getters, unoxidised Si particles are obtained. They exhibit pyrophoric behaviour. This continuous nanoparticle preparation method can be combined with other processing techniques, including surface functionalization or the immediate impaction of freshly prepared nanoparticles onto a substrate for applications in the field of batteries, hydrogen storage or sensors.

  15. Material Properties of Laser-Welded Thin Silicon Foils

    Directory of Open Access Journals (Sweden)

    M. T. Hessmann

    2013-01-01

    Full Text Available An extended monocrystalline silicon base foil offers a great opportunity to combine low-cost production with high efficiency silicon solar cells on a large scale. By overcoming the area restriction of ingot-based monocrystalline silicon wafer production, costs could be decreased to thin film solar cell range. The extended monocrystalline silicon base foil consists of several individual thin silicon wafers which are welded together. A comparison of three different approaches to weld 50 μm thin silicon foils is investigated here: (1 laser spot welding with low constant feed speed, (2 laser line welding, and (3 keyhole welding. Cross-sections are prepared and analyzed by electron backscatter diffraction (EBSD to reveal changes in the crystal structure at the welding side after laser irradiation. The treatment leads to the appearance of new grains and boundaries. The induced internal stress, using the three different laser welding processes, was investigated by micro-Raman analysis. We conclude that the keyhole welding process is the most favorable to produce thin silicon foils.

  16. Influence of ambient moisture on the compaction behavior of microcrystalline cellulose powder undergoing uni-axial compression and roller-compaction: a comparative study using near-infrared spectroscopy.

    Science.gov (United States)

    Gupta, Abhay; Peck, Garnet E; Miller, Ronald W; Morris, Kenneth R

    2005-10-01

    This study evaluates the effect of variation in the ambient moisture on the compaction behavior of microcrystalline cellulose (MCC) powder. The study was conducted by comparing the physico-mechanical properties of, and the near infrared (NIR) spectra collected on, compacts prepared by roller compaction with those collected on simulated ribbons, that is, compacts prepared under uni-axial compression. Relative density, moisture content, tensile strength (TS), and Young modulus were used as key sample attributes for comparison. Samples prepared at constant roller compactor settings and feed mass showed constant density and a decrease in TS with increasing moisture content. Compacts prepared under uni-axial compression at constant pressure and compact mass showed the opposite effect, that is, density increased while TS remained almost constant with increasing moisture content. This suggests difference in the influence of moisture on the material under roller compaction, in which the roll gap (i.e., thickness and therefore density) remains almost constant, vs. under uni-axial compression, in which the thickness is free to change in response to the applied pressure. Key sample attributes were also related to the NIR spectra using multivariate data analysis by the partial least squares projection to latent structures (PLS). Good agreement was observed between the measured and the NIR-PLS predicted values for all key attributes for both, the roller compacted samples as well as the simulated ribbons. Copyright (c) 2005 Wiley-Liss, Inc. and the American Pharmacists Association

  17. Reuse of the Reflective Light and the Recycle Heat Energy in Concentrated Photovoltaic System

    Directory of Open Access Journals (Sweden)

    Hsin-Chien Chen

    2013-01-01

    Full Text Available A complex solar unit with microcrystalline silicon solar cells placed around the centered GaAs triple junction solar cell has been proposed and carried out. With the same illumination area and intensity, the total resultant power shows that the excess microcrystalline silicon solar cells increase the total output power by 13.2% by absorbing the reflective light from the surface of optical collimators. Furthermore, reusing the residual heat energy generated from the above-mentioned mechanism helps to increase the output power by around 14.1%. This mechanism provides a simple method to enhance the utility rate of concentrated photovoltaic (CPV system. Such concept can be further applied to the aerospace industry and the development of more efficient CPV solar energy applications.

  18. Microstructural Characterization of Reaction-Formed Silicon Carbide Ceramics. Materials Characterization

    Science.gov (United States)

    Singh, M.; Leonhardt, T. A.

    1995-01-01

    Microstructural characterization of two reaction-formed silicon carbide ceramics has been carried out by interference layering, plasma etching, and microscopy. These specimens contained free silicon and niobium disilicide as minor phases with silicon carbide as the major phase. In conventionally prepared samples, the niobium disilicide cannot be distinguished from silicon in optical micrographs. After interference layering, all phases are clearly distinguishable. Back scattered electron (BSE) imaging and energy dispersive spectrometry (EDS) confirmed the results obtained by interference layering. Plasma etching with CF4 plus 4% O2 selectively attacks silicon in these specimens. It is demonstrated that interference layering and plasma etching are very useful techniques in the phase identification and microstructural characterization of multiphase ceramic materials.

  19. Research Progress on Preparation for Biomass-based SiC Ceramic

    Directory of Open Access Journals (Sweden)

    CUI He-shuai

    2017-08-01

    Full Text Available Silicon carbide (SiC ceramics prepared by the conventional process has excellent properties and wide application prospects, but the increased cost of high-temperature preparation process restricts its further development. In contrast, the abundant porous structure of biomass makes itself to be ideal replacement of SiC ceramic prepared at low temperature. This paper reviewed the structure characteristics, preparation methods, pyrolysis mechanism and influence parameters of biomass-based SiC ceramic, and eventually explored the current problems and development trends of the pretreatment of carbon source and silicon source, the pyrolysis process and the application research on the preparation for biomass-based SiC ceramic.

  20. Oxygen-related 1-platinum defects in silicon: An electron paramagnetic resonance study

    Science.gov (United States)

    Juda, U.; Scheerer, O.; Höhne, M.; Riemann, H.; Schilling, H.-J.; Donecker, J.; Gerhardt, A.

    1996-09-01

    A monoclinic 1-platinum defect recently detected was investigated more thoroughly by electron paramagnetic resonance (EPR). The defect is one of the dominating defects in platinum doped silicon. With a perfect reproducibility it is observed in samples prepared from n-type silicon as well as from p-type silicon, in float zone (FZ) silicon as well as in Czochralski (Cz) silicon. Its concentration varies with the conditions of preparation and nearly reaches that of isolated substitutional platinum in Cz silicon annealed for 2 h at 540 °C after quenching from the temperature of platinum diffusion. Because of its concentration which in Cz-Si exceeds that in FZ-Si the defect is assumed to be oxygen-related though a hyperfine structure with 17O could not be resolved. The defect causes a level close to the valence band. This is concluded from variations of the Fermi level and from a discussion of the spin Hamiltonian parameters. In photo-EPR experiments the defect is coupled to recently detected acceptorlike self-interstitial related defects (SIRDs); their level position turns out to be near-midgap. These defects belong to the lifetime limiting defects in Pt-doped Si.

  1. Field assisted photoemission by silicon photocathodes

    International Nuclear Information System (INIS)

    Aboubacar, A.; Dupont, M.; El Manouni, A.; Querrou, M.; Says, L.P.

    1991-01-01

    Silicon photocathodes with arrays of tips have been prepared using microlithographic techniques. Current emission due to field effect has been measured in the case of heavy and weakly doped boron Silicon. An Argon continuous laser has been used to produce photocurrent. An instantaneous current (600 μA) with a moderate laser power (83 mW), has been produced on weakly doped photocathodes. This current corresponds to an average quantum yield (purely photoelectric) of about 1.7%, and a local current density in the range of a few 10 6 A m -2

  2. Preparation of rare earth and other metal alloys containing aluminum and silicon

    International Nuclear Information System (INIS)

    Mitchell, A.; Goldsmith, J.R.; Gray, M.

    1981-01-01

    A method is provided for making alloys of aluminum and silicon with a third metal which may be a rare earth or a member of groups 4b, 5b, or 6b of the periodic table. The flux system CaF 2 -CaO-Al 2 O 3 is used as a solvent to provide a reactive medium for the alloy-forming reactions. Aluminum is supplied as a reducing agent, and silicon is added as a sink for the alloying metal. The resulting alloy may be used in steels. (L.L.)

  3. Polycystalline silicon thin films for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, Christian Claus

    2012-01-15

    with an activation energy of E{sub A}{sup poly-Si}=1.1 eV. By long-lasting tempering or a short high-temperature step finally the stable layer configuration substrate/Al+Si islands(hillocks)/poly-Si can be reached (E{sub A}{sup hillocks}=2.4 eV). The further main topic of this thesis is the study of the applicability of the poly-silicon layers fabricated by means of the ALILE and R-ALILE process for electronic applications. First thin-film transistors were studied. Additionally thin-film solar cells with microcrystalline silicon as absorber material on polycrystalline R-ALILE seed layers were fabricated. Finally the suitedness of the fabricated poly-silicon layers for crytographic applications were studied.

  4. Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

    Science.gov (United States)

    Jagannathan, Basanth

    Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

  5. Extraction of microcrystalline cellulose from rice straw and its effect on polyvinyl alcohol biocomposites film

    Science.gov (United States)

    Chin, Kwok-Mern; Ting, Sam Sung; Lin, Ong Hui; Owi, Wei Tieng

    2017-07-01

    The poor management and underutilization of agricultural wastes had proliferated interest of researchers around the world to find alternatives to utilize them as potential value-added products. One of the green alternatives is by extracting cellulose from these waste materials and incorporating them in polymer as reinforcement fillers. The surging amount of plastic waste also posed major issues to the environment due to its recalcitrance to degrade. Microcrystalline cellulose (MCC-RS) was extracted from rice straw through cyclic alkaline and bleaching treatment to remove hemicellulose and lignin respectively. Polyvinyl alcohol (PVOH) was chosen as the matrix and different ratios of PVOH / MCC-RS films were prepared (2.5, 5.0, 7.5 and 10.0wt% of MCC) through solution casting method and its tensile, thermal and morphological properties were studied. X-ray powder diffraction (XRD) results showed increased crystallinity of MCC-RS after chemical treatment (from 44.5% to 60.8%) due to the successful removal of lignin and hemicellulose, which was then confirmed with Fourier transform infrared spectroscopy (FTIR) results. For the biocomposites, both tensile strength and Young's modulus of the films increased with increasing MCC-RS content up until 7.5wt%, supported with scanning electron microscopy (SEM) results which depicted improvement in the interfacial adhesion between MCC-RS and PVOH. From the overall results, the improvement in properties of biocomposite from cellulose-based microfiller had shown promising future in application of the water soluble plastic packaging industry.

  6. High quality β-FeSi2 thin films prepared on silicon (100) by using pulsed laser ablation of Fe target

    International Nuclear Information System (INIS)

    Xu, S.C.; Yang, C.; Liu, M.; Jiang, S.Z.; Ma, Y.Y.; Chen, C.S.; Gao, X.G.; Sun, Z.C.; Hu, B.; Wang, C.C.; Man, B.Y.

    2012-01-01

    High quality β-FeSi 2 thin films have been fabricated on silicon (100) substrate by the pulsed laser deposition (PLD) technique with the Fe and sintered FeSi 2 targets. The crystalline quality and surface morphology of the samples were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy. These results indicate that the samples prepared with a Fe target can acquire a better crystalline quality and a smoother surface than those with a sintered FeSi 2 target. The reasons were discussed with subsurface superheating mechanism. The intrinsic PL spectrum attributed to the interband transition of β-FeSi 2 for all the samples was compared, showing that the film prepared with Fe target can acquire a good PL property by optimizing experimental parameters. It is suggested that sputtering Fe on Si substrate by the pulsed laser offers a cheap and convenient way to prepare the β-FeSi 2 thin films. -- Highlights: ► β-FeSi 2 films were fabricated by PLD technique with the Fe and FeSi 2 targets. ► The films prepared with Fe target have good crystalline quality and smooth surface. ► The Fe target prepared film acquired a high PL intensity. ► Sputtering Fe on Si substrate offers a convenient way to prepare the β-FeSi 2 films.

  7. Quenching of porous silicon photoluminescence by molecular oxygen and dependence of this phenomenon on storing media and method of preparation of pSi photosensitizer

    Science.gov (United States)

    Balaguer, María; Matveeva, Eugenia

    2010-10-01

    The quenching of porous silicon photoluminescence (pSi PL) by molecular oxygen has been studied in different storing media in an attempt to clarify the mechanism of the energy transfer from the silicon photosensitizer to the oxygen acceptor. Luminescent materials have been prepared by two methods: electrochemical anodizing and chemical etching. Different structural forms were used: porous layers on silicon wafer and two kinds of differently prepared powder. Dry air and liquid water were employed as storing media; quenching behaviour was under observation until total degradation of quenching properties. Singlet oxygen molecules generation through energy transfer from photoluminescent pSi was the only photosensitizing mechanism observed under dry gas conditions. This PL quenching process was preferentially developed at 760 nm (1.63 eV) that corresponds to the formation of the 1Σ singlet oxygen state. Oxidation of the pSi photosensitizer was the main factor that led to its total deactivation in a time scale of few weeks. Regarding water medium, different photosensitizing behaviour was observed. In watery conditions, two preferred energy levels were found: the one detected in dry gas and another centred at approximately 2.2 eV (550 nm). Formation of reactive oxygen species (ROS) different from singlet oxygen, such as superoxide anion or superoxide radical, can be responsible for the second one. This second quenching process developed gradually after the initial contact of pSi photosensitizer with water and then degraded. The process lasted only several hours. Therefore, functionalization of the pSi photosensitizer is probably required to stabilize its PL and quenching properties in the watery physiological conditions required for biomedical applications.

  8. Quenching of porous silicon photoluminescence by molecular oxygen and dependence of this phenomenon on storing media and method of preparation of pSi photosensitizer

    Energy Technology Data Exchange (ETDEWEB)

    Balaguer, Maria, E-mail: mabara@itq.upv.e [Technical University of Valencia, Nanophotonics Technology Center (Spain); Matveeva, Eugenia, E-mail: eumat@em-silicon.co [EM-Silicon Nano-Technologies, S.L. (Spain)

    2010-10-15

    The quenching of porous silicon photoluminescence (pSi PL) by molecular oxygen has been studied in different storing media in an attempt to clarify the mechanism of the energy transfer from the silicon photosensitizer to the oxygen acceptor. Luminescent materials have been prepared by two methods: electrochemical anodizing and chemical etching. Different structural forms were used: porous layers on silicon wafer and two kinds of differently prepared powder. Dry air and liquid water were employed as storing media; quenching behaviour was under observation until total degradation of quenching properties. Singlet oxygen molecules generation through energy transfer from photoluminescent pSi was the only photosensitizing mechanism observed under dry gas conditions. This PL quenching process was preferentially developed at 760 nm (1.63 eV) that corresponds to the formation of the {sup 1{Sigma}} singlet oxygen state. Oxidation of the pSi photosensitizer was the main factor that led to its total deactivation in a time scale of few weeks. Regarding water medium, different photosensitizing behaviour was observed. In watery conditions, two preferred energy levels were found: the one detected in dry gas and another centred at approximately 2.2 eV (550 nm). Formation of reactive oxygen species (ROS) different from singlet oxygen, such as superoxide anion or superoxide radical, can be responsible for the second one. This second quenching process developed gradually after the initial contact of pSi photosensitizer with water and then degraded. The process lasted only several hours. Therefore, functionalization of the pSi photosensitizer is probably required to stabilize its PL and quenching properties in the watery physiological conditions required for biomedical applications.

  9. Preparation and mechanical properties of carbon nanotube-silicon nitride nano-ceramic matrix composites

    Science.gov (United States)

    Tian, C. Y.; Jiang, H.

    2018-01-01

    Carbon nanotube-silicon nitride nano-ceramic matrix composites were fabricated by hot-pressing nano-sized Si3N4 powders and carbon nanotubes. The effect of CNTs on the mechanical properties of silicon nitride was researched. The phase compositions and the microstructure characteristics of the samples as well as the distribution of carbon nanotube in the silicon nitride ceramic were analyzed by X-ray diffraction and scanning electron microscope. The results show that the microstructure of composites consists mainly of α-Si3N4, β-Si3N4, Si2N2O and carbon natubes. The addition of proper amount of carbon nanotubes can improve the fracture toughness and the flexural strength, and the optimal amount of carbon nanotube are both 3wt.%. However the Vickers hardness values decrease with the increase of carbon nanotubes content.

  10. Preparing magnetic yttrium iron garnet nanodot arrays by ultrathin anodic alumina template on silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Hui; Han, Mangui, E-mail: han-mangui@yahoo.com; Deng, Longjiang [National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zheng, Liang; Zheng, Peng; Qin, Huibin [Institute of Electron Device and Application, Hangzhou Dianzi University, Hangzhou 310008 (China); Wu, Qiong [Magnetism Key Laboratory of Zhejiang Province, China Jiliang University, Hangzhou 310018 (China)

    2015-08-10

    Ultrahigh density periodically ordered magnetic yttrium iron garnet (Y{sub 3}Fe{sub 5}O{sub 12}, YIG) nanodot arrays have been prepared by pulsed laser deposition through an ultrathin alumina mask (UTAM). UTAM having periodically ordered circularly shaped holes with 350 nm in diameter, 450 nm in inter-pore distance, and 700 nm in height has been prepared on silicon substrate. Furthermore, the microstructure and magnetic properties of YIG nanodot arrays have been characterized. Nanodot arrays with a sharp distribution in diameter centered at 340 nm with standard deviation of 10 nm have been fabricated. Moreover, typical hysteresis loops and ferromagnetic resonance spectra in in-plane and out-of-plane revealed that this unique structure greatly influences the magnetics properties of YIG. First, coercivity of YIG nanodot arrays in in-plane was increased about from 15 Oe of YIG films to 500 Oe. Then, the degree of uniformity about nanodot height decided that two or more resonance peaks in out-of-plane were detected in the spectra. The peak-to-peak linewidth values were about 94 Oe and 40 Oe in the parallel and perpendicular directions, respectively, which indicated that the values were larger by the two-magnon scattering. Consequently, this pattering method creates opportunities for studying physics in oxide nanomagnets and may be applied in spin-wave devices.

  11. Hydrogen concentration profiles and chemical bonding in silicon nitride

    International Nuclear Information System (INIS)

    Peercy, P.S.; Stein, H.J.; Doyle, B.L.; Picraux, S.T.

    1978-01-01

    The complementary technique of nuclear reaction analysis and infrared absorption were used to study the concentration profile and chemical bonding of hydrogen in silicon nitride for different preparation and annealing conditions. Silicon nitride prepared by chemical vapor deposition from ammonia-silane mixtures is shown to have hydrogen concentrations of 8.1 and 6.5 at.% for deposition temperatures of 750 and 900 0 C, respectively. Plasma deposition at 300 0 C from these gases results in hydrogen concentrations of approximately 22 at.%. Comparison of nuclear reaction analysis and infrared absorption measurements after isothermal annealing shows that all of the hydrogen retained in the films remains bonded to either silicon or nitrogen and that hydrogen release from the material on annealing is governed by various trap energies involving at least two N-H and one Si-H trap. Reasonable estimates of the hydrogen release rates can be made from the effective diffusion coefficient obtained from measurements of hydrogen migration in hydrogen implanted and annealed films

  12. Optical properties of erbium-doped porous silicon waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Najar, A. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B P. 80518, 22305 Lannion Cedex (France); Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Charrier, J. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B P. 80518, 22305 Lannion Cedex (France)]. E-mail: joel.charier@univ-rennes1.fr; Ajlani, H. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Lorrain, N. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B P. 80518, 22305 Lannion Cedex (France); Elhouichet, H. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Oueslati, M. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Haji, L. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B P. 80518, 22305 Lannion Cedex (France)

    2006-12-15

    Planar and buried channel porous silicon waveguides (WG) were prepared from p{sup +}-type silicon substrate by a two-step anodization process. Erbium ions were incorporated into pores of the porous silicon layers by an electrochemical method using ErCl{sub 3}-saturated solution. Erbium concentration of around 10{sup 20} at/cm{sup 3} was determined by energy-dispersive X-ray analysis performed on SEM cross-section. The luminescence properties of erbium ions in the IR range were determined and a luminescence time decay of 420 {mu}s was measured. Optical losses were studied on these WG. The increased losses after doping were discussed.

  13. Comparative Study of Furnace and Flash Lamp Annealed Silicon Thin Films Grown by Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Maheshwar Shrestha

    2018-03-01

    Full Text Available Low-temperature growth of microcrystalline silicon (mc-Si is attractive for many optoelectronic device applications. This paper reports a detailed comparison of optical properties, microstructure, and morphology of amorphous silicon (a-Si thin films crystallized by furnace annealing and flash lamp annealing (FLA at temperatures below the softening point of glass substrate. The initial a-Si films were grown by plasma enhanced chemical vapor deposition (PECVD. Reflectance measurement indicated characteristic peak in the UV region ~280 nm for the furnace annealed (>550 °C and flash lamp annealed films, which provided evidence of crystallization. The film surface roughness increased with increasing the annealing temperature as well as after the flash lamp annealing. X-ray diffraction (XRD measurement indicated that the as-deposited samples were purely amorphous and after furnace crystallization, the crystallites tended to align in one single direction (202 with uniform size that increased with the annealing temperature. On the other hand, the flash lamp crystalized films had randomly oriented crystallites with different sizes. Raman spectroscopy showed the crystalline volume fraction of 23.5%, 47.3%, and 61.3% for the samples annealed at 550 °C, 650 °C, and with flash lamp, respectively. The flash lamp annealed film was better crystallized with rougher surface compared to furnace annealed ones.

  14. Lithium-storage Properties of Gallic Acid-Reduced Graphene Oxide and Silicon-Graphene Composites

    International Nuclear Information System (INIS)

    Xu, Binghui; Zhang, Jintao; Gu, Yi; Zhang, Zhi; Al Abdulla, Wael; Kumar, Nanjundan Ashok; Zhao, X.S.

    2016-01-01

    Graphene oxide (GO) was de-oxygenated using gallic acid under mild conditions to prepare reduced graphene oxide (RGO). The resultant RGO showed a lithium-ion storage capacity of 1280 mA h g −1 at a current density of 200 mA g −1 after 350 cycles when used as an anode for lithium ion batteries. The RGO was further used to stabilize silicon (Si) nanoparticles to prepare silicon-graphene composite electrode materials. Experimental results showed that a composite electrode prepared with a mass ratio of Si:GO = 1:2 exhibited the best lithium ion storage performance.

  15. Simulation of forward dark current voltage characteristics of tandem solar cells

    International Nuclear Information System (INIS)

    Rubinelli, F.A.

    2012-01-01

    The transport mechanisms tailoring the shape of dark current–voltage characteristics of amorphous and microcrystalline silicon based tandem solar cell structures are explored with numerical simulations. Our input parameters were calibrated by fitting experimental current voltage curves of single and double junction structures measured under dark and illuminated conditions. At low and intermediate forward voltages the dark current–voltage characteristics show one or two regions with a current–voltage exponential dependence. The diode factor is unique in tandem cells with the same material in both intrinsic layers and two dissimilar diode factors are observed in tandem cells with different materials on the top and bottom intrinsic layers. In the exponential regions the current is controlled by recombination through gap states and by free carrier diffusion. At high forward voltages the current grows more slowly with the applied voltage. The current is influenced by the onset of electron space charge limited current (SCLC) in tandem cells where both intrinsic layers are of amorphous silicon and by series resistance of the bottom cell in tandem cells where both intrinsic layers are of microcrystalline silicon. In the micromorph cell the onset of SCLC becomes visible on the amorphous top sub-cell. The dark current also depends on the thermal generation of electron–hole (e–h) pairs present at the tunneling recombination junction. The highest dependence is observed in the tandem structure where both intrinsic layers are of microcrystalline silicon. The prediction of meaningless dark currents at low forward and reverse voltages by our code is discussed and one solution is given. - Highlights: ► Transport mechanisms shaping the dark current-voltage curves of tandem devices. ► The devices are amorphous and microcrystalline based tandem solar cells. ► Two regions with a current-voltage exponential dependence are observed. ► The tandem J-V diode factor is the

  16. Indium tin oxide thin-films prepared by vapor phase pyrolysis for efficient silicon based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Simashkevich, Alexei, E-mail: alexeisimashkevich@hotmail.com [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Serban, Dormidont; Bruc, Leonid; Curmei, Nicolai [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Hinrichs, Volker [Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Rusu, Marin [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)

    2016-07-01

    The vapor phase pyrolysis deposition method was developed for the preparation of indium tin oxide (ITO) thin films with thicknesses ranging between 300 and 400 nm with the sheet resistance of 10–15 Ω/sq. and the transparency in the visible region of the spectrum over 80%. The layers were deposited on the (100) surface of the n-type silicon wafers with the charge carriers concentration of ~ 10{sup 15} cm{sup −3}. The morphology of the ITO layers deposited on Si wafers with different surface morphologies, e.g., smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) was investigated. The as-deposited ITO thin films consist of crystalline columns with the height of 300–400 nm and the width of 50–100 nm. Photovoltaic parameters of mono- and bifacial solar cells of Cu/ITO/SiO{sub 2}/n–n{sup +} Si/Cu prepared on Si (100) wafers with different surface structures were studied and compared. A maximum efficiency of 15.8% was achieved on monofacial solar cell devices with the textured Si surface. Bifacial photovoltaic devices from 100 μm thick Si wafers with the smooth surface have demonstrated efficiencies of 13.0% at frontal illumination and 10% at rear illumination. - Highlights: • ITO thin films prepared by vapor phase pyrolysis on Si (100) wafers with a smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) surface. • Monofacial ITO/SiO2/n-n+Si solar cells with an efficiency of 15.8% prepared and bifacial PV devices with front- and rear-side efficiencies up to 13% demonstrated. • Comparative studies of photovoltaic properties of solar cells with different morphologies of the Si wafer surface presented.

  17. Degradability of composites, prepared from ethylene-propylene copolymer and jute fiber under accelerated aging and biotic environments

    International Nuclear Information System (INIS)

    Kumar, Annamalai Pratheep; Singh, Raj Pal; Sarwade, Bhimrao D.

    2005-01-01

    The utilization of natural fiber as reinforcement for the thermoplastic composites is growing not only for ecological concern but also for wide range of applications. In the present article, three types of composites were prepared by melt mixing of ethylene-propylene (EP) copolymer and (i) 3% NaOH treated jute fiber, (ii) 17.5% NaOH treated jute fiber and (iii) commercial microcrystalline cellulose powder using maleated EP copolymer as compatibilizer. The obtained composites were characterized by Fourier transform infrared spectroscopy (FTIR), Thermal gravimetric analysis (TGA) and microscopic measurements. The durability of the composites was evaluated under polychromatic irradiation (λ ≥ 290 nm) and composting condition for different time intervals. It was found that the treatments on the natural fiber have influenced the service life of the end product. Composites made from microcrystalline cellulose showed better mechanical properties as well as photo-resistance. The specimen containing 3% NaOH treated fiber exhibited relatively lowest photo-resistance and biosusceptibility. It was found that the composites were less durable under both abiotic and biotic conditions in comparison of the neat polymer matrix

  18. Optimization of Fluorescent Silicon Nano material Production Using Peroxide/ Acid/ Salt Technique

    International Nuclear Information System (INIS)

    Abuhassan, L.H.

    2009-01-01

    Silicon nano material was prepared using the peroxide/ acid/ salt technique in which an aqueous silicon-based salt solution was added to H 2 O 2 / HF etchants. In order to optimize the experimental conditions for silicon nano material production, the amount of nano material produced was studied as a function of the volume of the silicon salt solution used in the synthesis. A set of samples was prepared using: 0, 5, 10, 15, and 20 ml of an aqueous 1 mg/ L metasilicate solution. The area under the corresponding peaks in the infrared (ir) absorption spectra was used as a qualitative indicator to the amount of the nano material present. The results indicated that using 10 ml of the metasilicate solution produced the highest amount of nano material. Furthermore, the results demonstrated that the peroxide/ acid/ salt technique results in the enhancement of the production yield of silicon nano material at a reduced power demand and with a higher material to void ratio. A model in which the silicon salt forms a secondary source of silicon nano material is proposed. The auxiliary nano material is deposited into the porous network causing an increase in the amount of nano material produced and a reduction in the voids present. Thus a reduction in the resistance of the porous layer, and consequently reduction in the power required, are expected. (author)

  19. Long-living positron and positronium states in zeolites and microcrystalline oxides

    International Nuclear Information System (INIS)

    Kajcsos, Zs.; Liszkay, L.; Varga, L.; Lohonyai, L.; Lazar, K.

    1995-01-01

    Positron annihilation (PA) investigation were performed on zeolites (X, Y and ZSM-5) and on microcrystalline MgO, Al 2 O 3 and SiO 2 , providing long lifetime components attributed to o-Ps atoms. In addition to the positron lifetime (LT) measurements, the energy distribution (ED) of the annihilation gamma radiation spectrum was recorded in the 30 keV - 1.5 MeV range for different samples and was compared to reference distributions for Si and GaAs samples, where no long-living Ps states are formed. Apart from the strong correlation with the water content in the samples, the positron data collected testify much more pronounced positronium hosting features for powders of the mentioned oxides than for zeolites. Positron LT spectroscopy combined with recording of the ED of the annihilation radiation provides reliable information on the forming of long living 3γ states. (author) 15 refs.; 4 figs

  20. Preparation of extractive resins for producing terbium-161

    International Nuclear Information System (INIS)

    De la Cruz B, C. C.; Monroy G, F.

    2009-10-01

    This paper presents the development of a methodology for extractive resins preparation to base of HDEHP, which allows to separation of Tb from Gd generating an own technology of preparation of these resins. The study included the extractive resins preparation from 6 different supports: kieselguhr Dg, alumina, red volcanic rock, chiluca, quarry and fluorite; two treatment types of of supports and varied concentrations of HDEHP extractant (di(2-etil hexyl) orthophosphoric acid), in order to determine which resin has improved efficiency of Gd and Tb separation, and radionuclide purity of 161 Tb. Resins were prepared to base of kieselguhr to determine the most appropriate silicon deposition process. Two silicon deposition treatments were realized: treatment I , by contact with silicon deposition solution (dimethyldichlorosilane / heptane 1:30) and treatment II by contact with vapors of dimethyldichlorosilane in vacuum. The extractant retention was carried out to different concentrations of HDEHP / acetone: 1:4, 1:8, 1:15, 1:20, 1:30 and 1:40. According to the results, there is not direct relation of HDEHP concentration used in extractive resins preparation to base of kieselguhr over the efficiency of Gd and Tb separation and of radionuclide purity of 161 Tb. The effect of support in the efficiency of Gd and Tb separation was studied to prepare resins with the supports kieselguhr, alumina, quarry, chiluca, volcanic rock and fluorite, using the silicon deposition treatment II for the supports and a concentration of HDEHP / acetone 1:20, for extractant retention. Only resins based on kieselguhr could separate to Gd from Tb quantitatively, the resin at a concentration of HDEHP / Acetone 1:20 was the best results obtained in Gd and Tb separation, achieving a separation efficiency greater than 90% and a radionuclide purity higher than 99%. (Author)

  1. Synthesis, properties and reactivity of intramolecular hypercoordinate silicon complexes

    International Nuclear Information System (INIS)

    Nikolin, A A; Negrebetsky, V V

    2014-01-01

    The state of the art of the chemistry of hypercoordinate silicon compounds is analyzed. Published data on the current top-priority approaches to the preparative synthesis of these compounds and on their properties, structures and reactivity are summarized and generalized. Relying on the results obtained by modern physicochemical methods, the possible mechanisms of stereodynamic processes occurring in the coordination units of hypercoordinate silicon complexes are discussed. The bibliography includes 157 references

  2. Sintering of nano crystalline α silicon carbide by doping with boron ...

    Indian Academy of Sciences (India)

    Sinterable nano silicon carbide powders of mean particle size (37 nm) were prepared by attrition milling and chemical processing of an acheson type alpha silicon carbide having mean particle size of 0.39 m (390 nm). Pressureless sintering of these powders was achieved by addition of boron carbide of 0.5 wt% together ...

  3. Recycling of silicon: from industrial waste to biocompatible nanoparticles for nanomedicine

    Science.gov (United States)

    Kozlov, N. K.; Natashina, U. A.; Tamarov, K. P.; Gongalsky, M. B.; Solovyev, V. V.; Kudryavtsev, A. A.; Sivakov, V.; Osminkina, L. A.

    2017-09-01

    The formation of photoluminescent porous silicon (PSi) nanoparticles (NPs) is usually based on an expensive semiconductor grade wafers technology. Here, we report a low-cost method of PSi NPs synthesis from the industrial silicon waste remained after the wafer production. The proposed method is based on metal-assisted wet-chemical etching (MACE) of the silicon surface of cm-sized metallurgical grade silicon stones which leads to a nanostructuring of the surface due to an anisotropic etching, with subsequent ultrasound fracturing in water. The obtained PSi NPs exhibit bright red room temperature photoluminescence (PL) and demonstrate similar microstructure and physical characteristics in comparison with the nanoparticles synthesized from semiconductor grade Si wafers. PSi NPs prepared from metallurgical grade silicon stones, similar to silicon NPs synthesized from high purity silicon wafer, show low toxicity to biological objects that open the possibility of using such type of NPs in nanomedicine.

  4. A silicon-based electrochemical sensor for highly sensitive, specific, label-free and real-time DNA detection

    International Nuclear Information System (INIS)

    Guo, Yuanyuan; Su, Shao; Wei, Xinpan; Zhong, Yiling; Su, Yuanyuan; He, Yao; Huang, Qing; Fan, Chunhai

    2013-01-01

    We herein present a new kind of silicon-based electrochemical sensor using a gold nanoparticles-decorated silicon wafer (AuNPs@Si) as a high-performance electrode, which is facilely prepared via in situ AuNPs growth on a silicon wafer. Particularly significantly, the resultant electrochemical sensor is efficacious for label-free DNA detection with high sensitivity due to the unique merits of the prepared silicon-based electrode. Typically, DNA at remarkably low concentrations (1–10 fM) could be readily detected without requiring additional signal-amplification procedures, which is better than or comparable to the lowest DNA concentration ever detected via well-studied signal-amplification-assisted electrochemical sensors. Moreover, the silicon-based sensor features high specificity, allowing unambiguous discrimination of single-based mismatches. We further show that real-time DNA assembly is readily monitored via recording the intensity changes of current signals due to the robust thermal stability of the silicon-based electrode. The unprecedented advantages of the silicon-based electrochemical sensor would offer new opportunities for myriad sensing applications. (paper)

  5. Rationally designed porous silicon as platform for optical biosensors

    International Nuclear Information System (INIS)

    Priano, G.; Acquaroli, L.N.; Lasave, L.C.; Battaglini, F.; Arce, R.D.; Koropecki, R.R.

    2012-01-01

    Optical porous silicon multilayer structures are able to work as sensitive chemical sensors or biosensors based in their optical response. An algorithm to simulate the optical response of these multilayers was developed, considering the optical properties of the individual layers. The algorithm allows designing and customizing the porous silicon structures according to a given application. The results obtained by the simulation were experimentally verified; for this purpose different photonic structures were prepared, such as Bragg reflectors and microcavities. Some of these structures have been derivatized by the introduction of aminosilane groups on the porous silicon surface. The algorithm also permits to simulate the effects produced by a non uniform derivatization of the multilayer. - Highlights: ► Mesoporous silicon structure ► Functionalization of mesoporous silicon as sensors ► Design of the one-dimensional photonic crystal ► Simulation of non-uniformity in covering the sensor structure

  6. 1366 Project Silicon: Reclaiming US Silicon PV Leadership

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

    2016-02-16

    1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

  7. Surface thiolation of silicon for antifouling application.

    Science.gov (United States)

    Zhang, Xiaoning; Gao, Pei; Hollimon, Valerie; Brodus, DaShan; Johnson, Arion; Hu, Hongmei

    2018-02-07

    Thiol groups grafted silicon surface was prepared as previously described. 1H,1H,2H,2H-perfluorodecanethiol (PFDT) molecules were then immobilized on such a surface through disulfide bonds formation. To investigate the contribution of PFDT coating to antifouling, the adhesion behaviors of Botryococcus braunii (B. braunii) and Escherichia coli (E. coli) were studied through biofouling assays in the laboratory. The representative microscope images suggest reduced B. braunii and E. coli accumulation densities on PFDT integrated silicon substrate. However, the antifouling performance of PFDT integrated silicon substrate decreased over time. By incubating the aged substrate in 10 mM TCEP·HCl solution for 1 h, the fouled PFDT coating could be removed as the disulfide bonds were cleaved, resulting in reduced absorption of algal cells and exposure of non-fouled silicon substrate surface. Our results indicate that the thiol-terminated substrate can be potentially useful for restoring the fouled surface, as well as maximizing the effective usage of the substrate.

  8. Chemical resistivity of self-assembled monolayer covalently attached to silicon substrate to hydrofluoric acid and ammonium fluoride

    Science.gov (United States)

    Saito, N.; Youda, S.; Hayashi, K.; Sugimura, H.; Takai, O.

    2003-06-01

    Self-assembled monolayers (SAMs) were prepared on hydrogen-terminated silicon substrates through chemical vapor deposition using 1-hexadecene (HD) as a precursor. The HD-SAMs prepared in an atmosphere under a reduced pressure (≈50 Pa) showed better chemical resistivities to hydrofluoric acid and ammonium fluoride (NH 4F) solutions than that of an organosilane SAM formed on oxide-covered silicon substrates. The surface covered with the HD-SAM was micro-patterned by vacuum ultraviolet photolithography and consequently divided into two areas terminated with HD-SAM or silicon dioxide. This micro-patterned sample was immersed in a 40 vol.% NH 4F aqueous solution. Surface images obtained by an optical microscopy clearly show that the micro-patterns of HD-SAM/silicon dioxide were successfully transferred into the silicon substrate.

  9. Materials of construction for silicon crystal growth

    Science.gov (United States)

    Leipold, M. H.; Odonnell, T. P.; Hagan, M. A.

    1980-01-01

    The performance of materials for construction and in contact with molten silicon for crystal growth is presented. The basis for selection considers physical compatibility, such as thermal expansion and strength, as well as chemical compatibility as indicated by contamination of the silicon. A number of new high technology materials are included as well as data on those previously used. Emphasis is placed on the sources and processing of such materials in that results are frequently dependent on the way a material is prepared as well as its intrinsic constituents.

  10. Local photoconductivity of microcrystalline silicon thin films excited by 442 nm HeCd laser measured by conductive atomic force microscopy

    Czech Academy of Sciences Publication Activity Database

    Ledinský, Martin; Fejfar, Antonín; Vetushka, Aliaksi; Stuchlík, Jiří; Kočka, Jan

    2012-01-01

    Roč. 358, č. 17 (2012), s. 2082-2085 ISSN 0022-3093. [International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS) /24./. Nara, 21.08.2011-26.08.2011] R&D Projects: GA MŠk(CZ) LC06040; GA MŠk(CZ) MEB061012; GA AV ČR KAN400100701 Grant - others:7. Framework programme of the European Community(XE) no. 240826 Institutional research plan: CEZ:AV0Z10100521 Keywords : amorphous and nanocrystalline silicon films * atomic force microscopy (AFM) * local photoconductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.597, year: 2012 http://www.sciencedirect.com/science/article/pii/S0022309312000178

  11. Effect of porous silicon layer on the performance of Si/oxide photovoltaic and photoelectrochemical cells

    International Nuclear Information System (INIS)

    Badawy, Waheed A.

    2008-01-01

    Photovoltaic and photoelectrochemical systems were prepared by the formation of a thin porous film on silicon. The porous silicon layer was formed on the top of a clean oxide free silicon wafer surface by anodic etching in HF/H 2 O/C 2 H 5 OH mixture (2:1:1). The silicon was then covered by an oxide film (tin oxide, ITO or titanium oxide). The oxide films were prepared by the spray/pyrolysis technique which enables doping of the oxide film by different atoms like In, Ru or Sb during the spray process. Doping of SnO 2 or TiO 2 films with Ru atoms improves the surface characteristics of the oxide film which improves the solar conversion efficiency. The prepared solar cells are stable against environmental attack due to the presence of the stable oxide film. It gives relatively high short circuit currents (I sc ), due to the presence of the porous silicon layer, which leads to the recorded high conversion efficiency. Although the open-circuit potential (V oc ) and fill factor (FF) were not affected by the thickness of the porous silicon film, the short circuit current was found to be sensitive to this thickness. An optimum thickness of the porous film and also the oxide layer is required to optimize the solar cell efficiency. The results represent a promising system for the application of porous silicon layers in solar energy converters. The use of porous silicon instead of silicon single crystals in solar cell fabrication and the optimization of the solar conversion efficiency will lead to the reduction of the cost as an important factor and also the increase of the solar cell efficiency making use of the large area of the porous structures

  12. Ammonia-free chemical bath method for deposition of microcrystalline cadmium selenide films

    International Nuclear Information System (INIS)

    Lokhande, C.D.; Lee, Eun-Ho; Jung, Kwang-Deog; Joo, Oh-Shim

    2005-01-01

    Chemical deposition of cadmium selenide (CdSe) films has been carried out from alkaline aqueous solution containing Cd 2+ and Se 2- ions. In general, the alkaline pH of the CdSe deposition bath has been adjusted by addition of liquid ammonia. However, the use of ammonia in large-scale chemical deposition method represents an environmental problem due to its volatility and toxicity. The volatility of ammonia changes the pH of deposition bath and results into irreproducible film properties. In the present paper, ammonia-free and weak alkaline (pH < 9.0) chemical method for cadmium selenide film has been developed. The cadmium selenide films are microcrystalline (grain size 0.5-0.7 μm) with hexagonal crystal structure. These films are photoactive and therefore, useful in photo conversion of light into electrical power

  13. Preparation of fluconazole buccal tablet and influence of formulation expedients on its properties.

    Science.gov (United States)

    Mohamed, Saifulla P; Muzzammil, Shariff; Pramod, Kumar T M

    2011-04-01

    The aim of present study was to prepare buccal tablets of fluconazole for oral candidiasis. The dosage forms were designed to release the drug above the minimum inhibitory concentration for prolonged period of time so as to reduce the frequency of administration and to overcome the side effects of systemic treatment. The buccal tablets were prepared by using Carbopol 71G and Noveon AA-1 by direct compression method. Microcrystalline cellulose was used as the filler and its effect was also studied. The prepared dosage forms were evaluated for physicochemical properties, in vitro release studies and mucoadhesive properties using sheep buccal mucosa as a model tissue. Tablets containing 50% of polymers (Carbopol & Noveon) were found to be the best with moderate swelling along with favorable bioadhesion force, residence time and in vitro drug release. The in vitro drug release studies revealed that drug released for 8 h, which in turn may reduce dosing frequency and improved patient compliance in oral candidiasis patients.

  14. Influence of acetylcholinesterase immobilization on the photoluminescence properties of mesoporous silicon surface

    Energy Technology Data Exchange (ETDEWEB)

    Saleem, Muhammad [Department of Chemistry, Kongju National University, Gongju, Chungnam 314-701 (Korea, Republic of); Rafiq, Muhammad; Seo, Sung-Yum [Department of Biology, Kongju National University, Gongju, Chungnam 314-701 (Korea, Republic of); Lee, Ki Hwan, E-mail: khlee@kongju.ac.kr [Department of Chemistry, Kongju National University, Gongju, Chungnam 314-701 (Korea, Republic of)

    2014-07-01

    Acetylcholinesterase immobilized p-type porous silicon surface was prepared by covalent attachment. The immobilization procedure was based on support surface chemical oxidation, silanization, surface activation with cyanuric chloride and finally covalent attachment of free enzyme on the cyanuric chloride activated porous silicon surface. Different pore diameter of porous silicon samples were prepared by electrochemical etching in HF based electrolyte solution and appropriate sample was selected suitable for enzyme immobilization with maximum trapping ability. The surface modification was studied through field emission scanning electron microscope, EDS, FT-IR analysis, and photoluminescence measurement by utilizing the fluctuation in the photoluminescence of virgin and enzyme immobilized porous silicon surface. Porous silicon showed strong photoluminescence with maximum emission at 643 nm and immobilization of acetylcholinesterase on porous silicon surface cause considerable increment on the photoluminescence of porous silicon material while acetylcholinesterase free counterpart did not exhibit any fluorescence in the range of 635–670 nm. The activities of the free and immobilized enzymes were evaluated by spectrophotometric method by using neostigmine methylsulfate as standard enzyme inhibitor. The immobilized enzyme exhibited considerable response toward neostigmine methylsulfate in a dose dependent manner comparable with that of its free counterpart alongside enhanced stability, easy separation from the reaction media and significant saving of enzyme. It was believed that immobilized enzyme can be exploited in organic and biomolecule synthesis possessing technical and economical prestige over free enzyme and prominence of easy separation from the reaction mixture.

  15. Influence of acetylcholinesterase immobilization on the photoluminescence properties of mesoporous silicon surface

    International Nuclear Information System (INIS)

    Saleem, Muhammad; Rafiq, Muhammad; Seo, Sung-Yum; Lee, Ki Hwan

    2014-01-01

    Acetylcholinesterase immobilized p-type porous silicon surface was prepared by covalent attachment. The immobilization procedure was based on support surface chemical oxidation, silanization, surface activation with cyanuric chloride and finally covalent attachment of free enzyme on the cyanuric chloride activated porous silicon surface. Different pore diameter of porous silicon samples were prepared by electrochemical etching in HF based electrolyte solution and appropriate sample was selected suitable for enzyme immobilization with maximum trapping ability. The surface modification was studied through field emission scanning electron microscope, EDS, FT-IR analysis, and photoluminescence measurement by utilizing the fluctuation in the photoluminescence of virgin and enzyme immobilized porous silicon surface. Porous silicon showed strong photoluminescence with maximum emission at 643 nm and immobilization of acetylcholinesterase on porous silicon surface cause considerable increment on the photoluminescence of porous silicon material while acetylcholinesterase free counterpart did not exhibit any fluorescence in the range of 635–670 nm. The activities of the free and immobilized enzymes were evaluated by spectrophotometric method by using neostigmine methylsulfate as standard enzyme inhibitor. The immobilized enzyme exhibited considerable response toward neostigmine methylsulfate in a dose dependent manner comparable with that of its free counterpart alongside enhanced stability, easy separation from the reaction media and significant saving of enzyme. It was believed that immobilized enzyme can be exploited in organic and biomolecule synthesis possessing technical and economical prestige over free enzyme and prominence of easy separation from the reaction mixture.

  16. Soft chemical synthesis of silicon nanosheets and their applications

    Energy Technology Data Exchange (ETDEWEB)

    Nakano, Hideyuki; Ikuno, Takashi [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan)

    2016-12-15

    Two-dimensional silicon nanomaterials are expected to show different properties from those of bulk silicon materials by virtue of surface functionalization and quantum size effects. Since facile fabrication processes of large area silicon nanosheets (SiNSs) are required for practical applications, a development of soft chemical synthesis route without using conventional vacuum processes is a challenging issue. We have recently succeeded to prepare SiNSs with sub-nanometer thicknesses by exfoliating layered silicon compounds, and they are found to be composed of crystalline single-atom-thick silicon layers. In this review, we present the synthesis and modification methods of SiNSs. These SiNSs have atomically flat and smooth surfaces due to dense coverage of organic moieties, and they are easily self-assembled in a concentrated state to form a regularly stacked structure. We have also characterized the electron transport properties and the electronic structures of SiNSs. Finally, the potential applications of these SiNSs and organic modified SiNSs are also reviewed.

  17. Rationally designed porous silicon as platform for optical biosensors

    Energy Technology Data Exchange (ETDEWEB)

    Priano, G. [INQUIMAE, DQIAyQF, FCEN, Universidad de Buenos Aires, Ciudad Universitaria, Pabellon 2 (C1428EHA) Buenos Aires (Argentina); Acquaroli, L.N.; Lasave, L.C. [Instituto De Desarrollo Tecnologico Para La Industria Quimica, UNL, CONICET, Gueemes 3450 (S3000GLN) Santa Fe (Argentina); Battaglini, F. [INQUIMAE, DQIAyQF, FCEN, Universidad de Buenos Aires, Ciudad Universitaria, Pabellon 2 (C1428EHA) Buenos Aires (Argentina); Arce, R.D., E-mail: rarce@intec.unl.edu.ar [Instituto De Desarrollo Tecnologico Para La Industria Quimica, UNL, CONICET, Gueemes 3450 (S3000GLN) Santa Fe (Argentina); Departamento De Materiales, Facultad De Ingenieria Quimica, UNL, Santiago del Estero 2829 (S3000) Santa Fe (Argentina); Koropecki, R.R. [Instituto De Desarrollo Tecnologico Para La Industria Quimica, UNL, CONICET, Gueemes 3450 (S3000GLN) Santa Fe (Argentina); Departamento De Materiales, Facultad De Ingenieria Quimica, UNL, Santiago del Estero 2829 (S3000) Santa Fe (Argentina)

    2012-08-01

    Optical porous silicon multilayer structures are able to work as sensitive chemical sensors or biosensors based in their optical response. An algorithm to simulate the optical response of these multilayers was developed, considering the optical properties of the individual layers. The algorithm allows designing and customizing the porous silicon structures according to a given application. The results obtained by the simulation were experimentally verified; for this purpose different photonic structures were prepared, such as Bragg reflectors and microcavities. Some of these structures have been derivatized by the introduction of aminosilane groups on the porous silicon surface. The algorithm also permits to simulate the effects produced by a non uniform derivatization of the multilayer. - Highlights: Black-Right-Pointing-Pointer Mesoporous silicon structure Black-Right-Pointing-Pointer Functionalization of mesoporous silicon as sensors Black-Right-Pointing-Pointer Design of the one-dimensional photonic crystal Black-Right-Pointing-Pointer Simulation of non-uniformity in covering the sensor structure.

  18. Covalent biofunctionalization of silicon nitride surfaces

    NARCIS (Netherlands)

    Arafat, A.; Giesbers, M.; Rosso, M.; Sudhölter, E.J.R.; Schroën, C.G.P.H.; White, R.G.; Li Yang,; Linford, M.R.; Zuilhof, H.

    2007-01-01

    Covalently attached organic monolayers on etched silicon nitride (SixN4; x 3) surfaces were prepared by reaction of SixN4-coated wafers with neat or solutions of 1-alkenes and 1-alkynes in refluxing mesitylene. The surface modification was monitored by measurement of the static water contact angle,

  19. Characterization of electrical and optical properties of silicon based materials

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Guobin

    2009-12-04

    In this work, the electrical and luminescence properties of a series of silicon based materials used for photovoltaics, microelectronics and nanoelectronics have been investigated by means of electron beam induced current (EBIC), cathodoluminescence (CL), photoluminescence (PL) and electroluminescence (EL) methods. Photovoltaic materials produced by block casting have been investigated by EBIC on wafers sliced from different parts of the ingot. Various solar cell processings have been compared in parallel wafers by means of EBIC collection efficiency measurements and contrast-temperature C(T) behaviors of the extended defects, i. e. dislocations and grain boundaries (GBs). It was found that the solar cell processing with phosphorus diffusion gettering (PDG) followed with a SiN firing greatly reduces the recombination activity of extended defects at room temperature, and improves the bulk property simultaneously. A remaining activity of the dislocations indicates the limitation of the PDG at extended defects. Abnormal behavior of the dislocation activity after certain solar cell processes was also observed in the region with high dislocation density, the dislocations are activated after certain solar cell processings. In order to evaluate the properties of a thin polycrystalline silicon layer prepared by Al-induced layer exchange (Alile) technique, epitaxially layer grown on silicon substrate with different orientations was used as a model system to investigate the impact by the process temperature and the substrates. EBIC energy dependent collection efficiency measurements reveal an improvement of the epilayer quality with increasing substrate temperature during the growth from 450 C to 650 C, and a decrease of epilayer quality at 700 C. PL measurements on the epitaxially grown Si layer on silicon substrates revealed no characteristic dislocation-related luminescence (DRL) lines at room temperature and 77 K, while in the samples prepared by Alile process, intense

  20. Rheology and stability kinetics of bare silicon nanoparticle inks for low-cost direct printing

    International Nuclear Information System (INIS)

    More, Priyesh V.; Jeong, Sunho; Seo, Yeong-Hui; Ryu, Beyong-Hwan; Choi, Youngmin; Kim, Seong Jip; Nahm, Sahn

    2013-01-01

    Highly dispersed and stable silicon nanoparticles ink is formulated for its application in direct printing or printable electronics. These dispersions are prepared from free-standing silicon nanoparticles which are not capped with any organic ligand, making it suitable for electronic applications. Silicon nanoparticles dispersions are prepared by suspending the nanoparticles in benzonitrile or ethanol by using polypropylene glycol (PPG) as a binder. All the samples show typical shear thinning behavior while the dispersion samples show low viscosities signifying good quality dispersion. Such thinning behavior favors in fabrication of dense films with spin-coating or patterns with drop casting. The dispersion stability is monitored by turbiscan measurements showing good stability for one week. A low-cost direct printing method for dispersion samples is also demonstrated to obtain micro-sized patterns. Low electrical resistivity of resulting patterns, adjustable viscosity and good stability makes these silicon nanoparticles dispersions highly applicable for direct printing process

  1. Rheology and stability kinetics of bare silicon nanoparticle inks for low-cost direct printing

    Energy Technology Data Exchange (ETDEWEB)

    More, Priyesh V.; Jeong, Sunho; Seo, Yeong-Hui; Ryu, Beyong-Hwan; Choi, Youngmin [Advanced Materials Division, Korea Research Institute of Chemical Technology 141 Gajeong-ro, Yuseong-gu, Daejeon 305-600 (Korea, Republic of); Kim, Seong Jip [Advanced Materials Division, Korea Research Institute of Chemical Technology 141 Gajeong-ro, Yuseong-gu, Daejeon 305-600 Korea and Department of Materials Science and Engineering, Korea University 5-1 Anam-Dong, Seongbuk-gu, Seoul 136-701 (Korea, Republic of); Nahm, Sahn [Department of Materials Science and Engineering, Korea University 5-1 Anam-Dong, Seongbuk-gu, Seoul 136-701 (Korea, Republic of)

    2013-12-16

    Highly dispersed and stable silicon nanoparticles ink is formulated for its application in direct printing or printable electronics. These dispersions are prepared from free-standing silicon nanoparticles which are not capped with any organic ligand, making it suitable for electronic applications. Silicon nanoparticles dispersions are prepared by suspending the nanoparticles in benzonitrile or ethanol by using polypropylene glycol (PPG) as a binder. All the samples show typical shear thinning behavior while the dispersion samples show low viscosities signifying good quality dispersion. Such thinning behavior favors in fabrication of dense films with spin-coating or patterns with drop casting. The dispersion stability is monitored by turbiscan measurements showing good stability for one week. A low-cost direct printing method for dispersion samples is also demonstrated to obtain micro-sized patterns. Low electrical resistivity of resulting patterns, adjustable viscosity and good stability makes these silicon nanoparticles dispersions highly applicable for direct printing process.

  2. Performance Improvement of Microcrystalline p-SiC/i-Si/n-Si Thin Film Solar Cells by Using Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Hsin-Ying Lee

    2014-01-01

    Full Text Available The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1 to 512 cm−1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD results, the microcrystalline i-Si films with (111, (220, and (311 diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2 to 18.16 mA/cm2 and from 6.89% to 8.58%, respectively.

  3. Multimodal Electrothermal Silicon Microgrippers for Nanotube Manipulation

    DEFF Research Database (Denmark)

    Nordström Andersen, Karin; Petersen, Dirch Hjorth; Carlson, Kenneth

    2009-01-01

    Microgrippers that are able to manipulate nanoobjects reproducibly are key components in 3-D nanomanipulation systems. We present here a monolithic electrothermal microgripper prepared by silicon microfabrication, and demonstrate pick-and-place of an as-grown carbon nanotube from a 2-D array onto...

  4. Effect of Current Density on Thermal and Optical Properties of p-Type Porous Silicon

    International Nuclear Information System (INIS)

    Kasra Behzad; Wan Mahmood Mat Yunus; Zainal Abidin Talib; Azmi Zakaria; Afarin Bahrami

    2011-01-01

    The different parameters of the porous silicon (PSi) can be tuned by changing some parameters in preparation process. We have chosen the anodization as formation method, so the related parameters should be changed. In this study the porous silicon (PSi) layers were formed on p-type Si wafer. The samples were anodized electrically in a fixed etching time under some different current densities. The structural and optical properties of porous silicon (PSi) on silicon (Si) substrates were investigated using photoluminescence (PL) and Photoacoustic Spectroscopy (PAS). (author)

  5. Comparison of silicon nanocrystals prepared by two fundamentally different methods

    Czech Academy of Sciences Publication Activity Database

    Cibulka, Ondřej; Vorkotter, C.; Purkrt, Adam; Holovský, Jakub; Benedikt, J.; Herynková, Kateřina

    2016-01-01

    Roč. 11, Oct (2016), s. 1-7, č. článku 445. ISSN 1556-276X Grant - others:AV ČR(CZ) DAAD-16-18 Program:Bilaterální spolupráce Institutional support: RVO:68378271 Keywords : silicon nanocrystals * electrochemical etching * low-pressure plasma * photoluminescence * size distribution * surface passivation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.833, year: 2016

  6. Optical properties of amorphous silicon: Some problem areas

    International Nuclear Information System (INIS)

    Ravindra, N.M.; Chelle, F. de; Ance, C.; Ferraton, J.P.; Berger, J.M.; Coulibaly, S.P.

    1983-08-01

    In this presentation we essentially attempt to throw light on some problem areas concerning the various optical properties of amorphous silicon. The problems seem to emerge from the classical methods employed to determine the optical properties like the optical gap, urbach tail parameter and other related characteristics. Additional problems have emerged in recent years by virtue of many attempts to generalize the property-behaviour relationships for amorphous silicon without attributing any importance to the method of preparation of the films. It should be noted here that although many authors believe disorder to be the controlling parameter, we are of the opinion that at least for films containing fairly large concentrations of hydrogen, the hydrogen concentration has an equally important role to play. The present study has been carried out for films prepared by glow-discharge and chemical vapour deposition. (author)

  7. Method of high purity silane preparation

    Science.gov (United States)

    Tsuo, Y. Simon; Belov, Eugene P.; Gerlivanov, Vadim G.; Zadde, Vitali V.; Kleschevnikova, Solomonida I.; Korneev, Nikolai N.; Lebedev, Eugene N.; Pinov, Akhsarbek B.; Ryabenko, Eugene A.; Strebkov, Dmitry S.; Chernyshev, Eugene A.

    2000-01-01

    A process for the preparation of high purity silane, suitable for forming thin layer silicon structures in various semiconductor devices and high purity poly- and single crystal silicon for a variety of applications, is provided. Synthesis of high-purity silane starts with a temperature assisted reaction of metallurgical silicon with alcohol in the presence of a catalyst. Alcoxysilanes formed in the silicon-alcohol reaction are separated from other products and purified. Simultaneous reduction and oxidation of alcoxysilanes produces gaseous silane and liquid secondary products, including, active part of a catalyst, tetra-alcoxysilanes, and impurity compounds having silicon-hydrogen bonds. Silane is purified by an impurity adsorption technique. Unreacted alcohol is extracted and returned to the reaction with silicon. Concentrated mixture of alcoxysilanes undergoes simultaneous oxidation and reduction in the presence of a catalyst at the temperature -20.degree. C. to +40.degree. C. during 1 to 50 hours. Tetra-alcoxysilane extracted from liquid products of simultaneous oxidation and reduction reaction is directed to a complete hydrolysis. Complete hydrolysis of tetra-alcoxysilane results in formation of industrial silica sol and alcohol. Alcohol is dehydrated by tetra-alcoxysilane and returned to the reaction with silicon.

  8. Printed Barium Strontium Titanate capacitors on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Sette, Daniele [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Luxembourg Institute of Science and Technology LIST, Materials Research and Technology Department, L-4422 Belvaux (Luxembourg); Kovacova, Veronika [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Defay, Emmanuel, E-mail: emmanuel.defay@list.lu [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Luxembourg Institute of Science and Technology LIST, Materials Research and Technology Department, L-4422 Belvaux (Luxembourg)

    2015-08-31

    In this paper, we show that Barium Strontium Titanate (BST) films can be prepared by inkjet printing of sol–gel precursors on platinized silicon substrate. Moreover, a functional variable capacitor working in the GHz range has been made without any lithography or etching steps. Finally, this technology requires 40 times less precursors than the standard sol–gel spin-coating technique. - Highlights: • Inkjet printing of Barium Strontium Titanate films • Deposition on silicon substrate • Inkjet printed silver top electrode • First ever BST films thinner than 1 μm RF functional variable capacitor that has required no lithography.

  9. Controlled silver delivery by silver-cellulose nanocomposites prepared by a one-pot green synthesis assisted by microwaves

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Ana Rosa; Unali, Gianfranco, E-mail: ana.rosa.silva@ua.pt [Structured Materials Expertise Group, Unilever Discover Port Sunlight, Quarry Road East, Bebington CH63 3JW (United Kingdom)

    2011-08-05

    Controlled silver release from cellulosic nanocomposites was achieved by synthesizing silver nanoparticles, under microwave heating for 1-15 min, in a one-pot, versatile and sustainable process in which microcrystalline cellulose simultaneously functions as reducing, stabilizing and supporting agent in water; chitin, starch and other cellulose derivatives could also be used as reducing, stabilizing and supporting agents for silver nanoparticles and the method was also found to be extensible to the preparation of noble metal (Au, Pt) and metal oxide nanoparticle (ZnO, Cu, CuO and Cu{sub 2}O) nanocomposites.

  10. Controlled silver delivery by silver-cellulose nanocomposites prepared by a one-pot green synthesis assisted by microwaves

    International Nuclear Information System (INIS)

    Silva, Ana Rosa; Unali, Gianfranco

    2011-01-01

    Controlled silver release from cellulosic nanocomposites was achieved by synthesizing silver nanoparticles, under microwave heating for 1-15 min, in a one-pot, versatile and sustainable process in which microcrystalline cellulose simultaneously functions as reducing, stabilizing and supporting agent in water; chitin, starch and other cellulose derivatives could also be used as reducing, stabilizing and supporting agents for silver nanoparticles and the method was also found to be extensible to the preparation of noble metal (Au, Pt) and metal oxide nanoparticle (ZnO, Cu, CuO and Cu 2 O) nanocomposites.

  11. Agglomeration of Luminescent Porous Silicon Nanoparticles in Colloidal Solutions.

    Science.gov (United States)

    Herynková, Kateřina; Šlechta, Miroslav; Šimáková, Petra; Fučíková, Anna; Cibulka, Ondřej

    2016-12-01

    We have prepared colloidal solutions of clusters composed from porous silicon nanoparticles in methanol, water and phosphate-buffered saline (PBS). Even if the size of the nanoclusters is between 60 and 500 nm, due to their highly porous "cauliflower"-like structure, the porous silicon nanoparticles are composed of interconnected nanocrystals having around 2.5 nm in size and showing strong visible luminescence in the orange-red spectral region (centred at 600-700 nm). Hydrophilic behaviour and good solubility of the nanoclusters in water and water-based solutions were obtained by adding hydrogen peroxide into the etching solution during preparation and 16 min long after-bath in hydrogen peroxide. By simple filtration of the solutions with syringe filters, we have extracted smaller nanoclusters with sizes of approx. 60-70 nm; however, these nanoclusters in water and PBS solution (pH neutral) are prone to agglomeration, as was confirmed by zeta potential measurements. When the samples were left at ambient conditions for several weeks, the typical nanocluster size increased to approx. 330-400 nm and then remained stable. However, both freshly filtered and aged samples (with agglomerated porous silicon nanoparticles) of porous silicon in water and PBS solutions can be further used for biological studies or as luminescent markers in living cells.

  12. Formation of microcrystalline germanium (μc-Ge:H) films from inductively coupled plasma CVD

    International Nuclear Information System (INIS)

    Okamoto, Y.; Makihara, K.; Higashi, S.; Miyazaki, S.

    2005-01-01

    Inductively coupled RF plasma of H 2 -diluted GeH 4 gas was applied to the growth of hydrogenated microcrystalline germanium (μc-Ge:H) films on quartz in a reactor with an external single-turn antenna placed on quartz plate window parallel to the substrate. The deposition rate, the crystallinity and the thickness of an amorphous incubation layer formed in the early stages of the film growth were evaluated as functions of GeH 4 concentration, gas flow rate, substrate temperature and the distance between the antenna and the grounded substrate susceptor. We demonstrated the growth of highly crystalized Ge films at a rate as high as 0.9 nm/s at 250 deg. C using a 8.3% GeH 4 diluted with H 2

  13. Laser desorption ionization and peptide sequencing on laser induced silicon microcolumn arrays

    Science.gov (United States)

    Vertes, Akos [Reston, VA; Chen, Yong [San Diego, CA

    2011-12-27

    The present invention provides a method of producing a laser-patterned silicon surface, especially silicon wafers for use in laser desorption ionization (LDI-MS) (including MALDI-MS and SELDI-MS), devices containing the same, and methods of testing samples employing the same. The surface is prepared by subjecting a silicon substrate to multiple laser shots from a high-power picosecond or femtosecond laser while in a processing environment, e.g., underwater, and generates a remarkable homogenous microcolumn array capable of providing an improved substrate for LDI-MS.

  14. Magnetite nanoparticles embedded in biodegradable porous silicon

    International Nuclear Information System (INIS)

    Granitzer, P.; Rumpf, K.; Roca, A.G.; Morales, M.P.; Poelt, P.; Albu, M.

    2010-01-01

    Magnetite nanoparticles, which are coated with oleic acid in a hexane solution and exhibit an average diameter of 7.7 nm, were embedded in a porous silicon (PS) matrix by immersion under defined parameters (e.g. concentration, temperature, time). The porous silicon matrix is prepared by anodization of a highly n-doped silicon wafer in an aqueous HF-solution. Magnetic characterization of the samples has been performed by SQUID-magnetometry. The superparamagnetic behaviour of the magnetite nanoparticles is represented by temperature-dependent magnetization measurements. Zero field (ZFC)/field cooled (FC) experiments indicate magnetic interactions between the particles. For the infiltration into the PS-templates different concentrations of the magnetite nanoparticles are used and magnetization measurements are performed in respect with magnetic interactions between the particles. The achieved porous silicon/magnetite specimens are not only interesting due to their transition between superparamagnetic and ferromagnetic behaviour, and thus for magnetic applications but also because of the non-toxicity of both materials giving the opportunity to employ the system in medical applications as drug delivery or in medical diagnostics.

  15. Photoluminescence of hydrophilic silicon nanocrystals in aqueous solutions

    International Nuclear Information System (INIS)

    Prtljaga, Nikola; D'Amato, Elvira; Pitanti, Alessandro; Guider, Romain; Froner, Elena; Larcheri, Silvia; Scarpa, Marina; Pavesi, Lorenzo

    2011-01-01

    Stable aqueous solutions of undecylenic-acid-grafted silicon nanocrystals (Si-nc) were prepared. The time evolution of the photoluminescence properties of these hydrophilic silicon nanocrystals has been followed on different timescales (hours and days). On a short timescale (hours), Si-nc tend to agglomerate while the PL lineshape and intensity are stable. Agglomeration can be reduced by using suitable surfactants. On a long timescale (days), oxidation of Si-nc occurs even in the presence of surfactants. These two observations render Si-nc very useful as a labeling agent for biosensing.

  16. Photoluminescence of hydrophilic silicon nanocrystals in aqueous solutions

    Science.gov (United States)

    Prtljaga, Nikola; D'Amato, Elvira; Pitanti, Alessandro; Guider, Romain; Froner, Elena; Larcheri, Silvia; Scarpa, Marina; Pavesi, Lorenzo

    2011-05-01

    Stable aqueous solutions of undecylenic-acid-grafted silicon nanocrystals (Si-nc) were prepared. The time evolution of the photoluminescence properties of these hydrophilic silicon nanocrystals has been followed on different timescales (hours and days). On a short timescale (hours), Si-nc tend to agglomerate while the PL lineshape and intensity are stable. Agglomeration can be reduced by using suitable surfactants. On a long timescale (days), oxidation of Si-nc occurs even in the presence of surfactants. These two observations render Si-nc very useful as a labeling agent for biosensing.

  17. Photoluminescence of hydrophilic silicon nanocrystals in aqueous solutions

    Energy Technology Data Exchange (ETDEWEB)

    Prtljaga, Nikola; D' Amato, Elvira; Pitanti, Alessandro; Guider, Romain; Froner, Elena; Larcheri, Silvia; Scarpa, Marina; Pavesi, Lorenzo, E-mail: nikolap@science.unitn.it [Department of Physics, University of Trento, Via Sommarive 14, I-38123 Trento (Italy)

    2011-05-27

    Stable aqueous solutions of undecylenic-acid-grafted silicon nanocrystals (Si-nc) were prepared. The time evolution of the photoluminescence properties of these hydrophilic silicon nanocrystals has been followed on different timescales (hours and days). On a short timescale (hours), Si-nc tend to agglomerate while the PL lineshape and intensity are stable. Agglomeration can be reduced by using suitable surfactants. On a long timescale (days), oxidation of Si-nc occurs even in the presence of surfactants. These two observations render Si-nc very useful as a labeling agent for biosensing.

  18. Sol-gel derived antireflective coatings for silicon

    Energy Technology Data Exchange (ETDEWEB)

    Brinker, C J; Harrington, M S

    1981-08-01

    The preparation of TiO2-SiO2 AR coatings, containing from 30 to 95 mol % TiO2, from alkoxide precursor solutions (titanium tetraethoxide and silicon tetraethoxide) by a sol-gel process is presented. The preparation of the solutions is described, which involves the separate partial hydrolysis of one or both alkoxides prior to their mixing (Yoldas, 1980). The solutions are applied to polished, circular (1 and 2 in. diameter) silicon wafers by a spinning process. The coated wafers are successively heated in air at each of the following temperatures: 200, 300, 350, 400, and 450 C, and optical measurements are performed on them after each heat treatment. The durability of 90 and 95% TiO2 coatings is evaluated in both acidic and basic environments, and reflectivity, film thickness, and refractive index are measured as a function of exposure time. It is shown that sol-gel films applied at 400 C reveal broad regions of antireflectance compared to other titanium-based films.

  19. Mapping boron in silicon solar cells using electron energy-loss spectroscopy

    DEFF Research Database (Denmark)

    in the energies of plasmon peaks in the low loss region [5]. We use these approaches to characterize both a thick n-p junction and the 10-nm-thick p-doped layer of a working solar cell. [1] U. Kroll, C. Bucher, S. Benagli, I. Schönbächler, J. Meier, A. Shah, J. Ballutaud, A. Howling, Ch. Hollenstein, A. Büchel, M......Amorphous silicon solar cells typically consist of stacked layers deposited on plastic or metallic substrates making sample preparation for transmission electron microscopy (TEM) difficult. The amorphous silicon layer - the active part of the solar cell - is sandwiched between 10-nm-thick n- and p...... resolution using TEM is highly challenging [3]. Recently, scanning TEM (STEM) combined with electron energy-loss spectroscopy (EELS) and spherical aberration-correction has allowed the direct detection of dopant concentration of 10^20cm-3 in 65-nm-wide silicon devices [4]. Here, we prepare TEM samples...

  20. Superconductivity observed in platinum-silicon interface

    Energy Technology Data Exchange (ETDEWEB)

    Kuo, Pai-Chia, E-mail: paichia@phys.sinica.edu.tw [Research Program on Nanoscience and Nanotechnology, Academia Sinica, Taipei 11529, Taiwan (China); Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Chen, Chun-Wei [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Lee, Ku-Pin; Shiue, Jessie, E-mail: yshiue@phys.sinica.edu.tw [Research Program on Nanoscience and Nanotechnology, Academia Sinica, Taipei 11529, Taiwan (China); Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China)

    2014-05-26

    We report the discovery of superconductivity with an onset temperature of ∼0.6 K in a platinum-silicon interface. The interface was formed by using a unique focused ion beam sputtering micro-deposition method in which the energies of most sputtered Pt atoms are ∼2.5 eV. Structural and elemental analysis by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy reveal a ∼ 7 nm interface layer with abundant Pt, which is the layer likely responsible for the superconducting transport behavior. Similar transport behavior was also observed in a gold-silicon interface prepared by the same technique, indicating the possible generality of this phenomenon.

  1. Nano silicon for lithium-ion batteries

    International Nuclear Information System (INIS)

    Holzapfel, Michael; Buqa, Hilmi; Hardwick, Laurence J.; Hahn, Matthias; Wuersig, Andreas; Scheifele, Werner; Novak, Petr; Koetz, Ruediger; Veit, Claudia; Petrat, Frank-Martin

    2006-01-01

    New results for two types of nano-size silicon, prepared via thermal vapour deposition either with or without a graphite substrate are presented. Their superior reversible charge capacity and cycle life as negative electrode material for lithium-ion batteries have already been shown in previous work. Here the lithiation reaction of the materials is investigated more closely via different electrochemical in situ techniques: Raman spectroscopy, dilatometry and differential electrochemical mass spectrometry (DEMS). The Si/graphite compound material shows relatively high kinetics upon discharge. The moderate relative volume change and low gas evolution of the nano silicon based electrode, both being important points for a possible future use in real batteries, are discussed with respect to a standard graphite electrode

  2. Thin-film solar cells

    International Nuclear Information System (INIS)

    Aberle, Armin G.

    2009-01-01

    The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.

  3. Study on Production of Silicon Nanoparticles from Quartz Sand for Hybrid Solar Cell Applications

    Science.gov (United States)

    Arunmetha, S.; Vinoth, M.; Srither, S. R.; Karthik, A.; Sridharpanday, M.; Suriyaprabha, R.; Manivasakan, P.; Rajendran, V.

    2018-01-01

    Nano silicon (nano Si) particles were directly prepared from natural mineral quartz sand and thereafter used to fabricate the hybrid silicon solar cells. Here, in this preparation technique, two process stages were involved. In the first stage, the alkaline extraction and acid precipitation processes were applied on quartz sand to fetch silica nanoparticles. In the second stage, magnesiothermic and modified magnesiothermic reduction reactions were applied on nano silica particles to prepare nano Si particles. The effect of two distinct reduction methodologies on nano Si particle preparation was compared. The magnesiothermic and modified magnesiothermic reductions in the silica to silicon conversion process were studied with the help of x-ray diffraction (XRD) with intent to study the phase changes during the reduction reaction as well as its crystalline nature in the pure silicon phase. The particles consist of a combination of fine particles with spherical morphology. In addition to this, the optical study indicated an increase in visible light absorption and also increases the performance of the solar cell. The obtained nano Si particles were used as an active layer to fabricate the hybrid solar cells (HSCs). The obtained results confirmed that the power conversion efficiency (PCE) of the magnesiothermically modified nano Si cells (1.06%) is much higher as compared to the nano Si cells that underwent magnesiothermic reduction (1.02%). Thus, this confirms the increased PCE of the investigated nano Si solar cell up to 1.06%. It also revealed that nano Si behaved as an electron acceptor and transport material. The present study provided valuable insights and direction for the preparation of nano Si particles from quartz sand, including the influence of process methods. The prepared nano Si particles can be utilized for HSCs and an array of portable electronic devices.

  4. Talc-silicon glass-ceramic waste forms for immobilization of high- level calcined waste

    International Nuclear Information System (INIS)

    Vinjamuri, K.

    1993-06-01

    Talc-silicon glass-ceramic waste forms are being evaluated as candidates for immobilization of the high level calcined waste stored onsite at the Idaho Chemical Processing Plant. These glass-ceramic waste forms were prepared by hot isostatically pressing a mixture of simulated nonradioactive high level calcined waste, talc, silicon and aluminum metal additives. The waste forms were characterized for density, chemical durability, and glass and crystalline phase compositions. The results indicate improved density and chemical durability as the silicon content is increased

  5. Super soft silicone elastomers with high dielectric permittivity

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Hvilsted, Søren

    2015-01-01

    Dielectric elastomers (DEs) have many favourable properties. The obstacle of high driving voltages, however, limits the commercial viability of the technology at present. Driving voltage can be lowered by decreasing the Young’s modulus and increasing the dielectric permittivity of silicone...... elastomers. A decrease in Young’s modulus, however, is often accompanied by the loss of mechanical stability and thereby the lifetime of the DE. New soft elastomer matrices with high dielectric permittivity and low Young’s modulus, with no loss of mechanical stability, were prepared by two different...... approaches using chloropropyl-functional silicone polymers. The first approach was based on synthesised chloropropyl-functional copolymers that were cross-linkable and thereby formed the basis of new silicone networks with high dielectric permittivity (e.g. a 43% increase). These networks were soft without...

  6. Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere

    Science.gov (United States)

    Hersam, Mark C.; Lipson, Albert L.; Bandyopadhyay, Sudeshna; Karmel, Hunter J; Bedzyk, Michael J

    2014-05-27

    A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.

  7. Etched ion tracks in silicon oxide and silicon oxynitride as charge injection or extraction channels for novel electronic structures

    International Nuclear Information System (INIS)

    Fink, D.; Petrov, A.V.; Hoppe, K.; Fahrner, W.R.; Papaleo, R.M.; Berdinsky, A.S.; Chandra, A.; Chemseddine, A.; Zrineh, A.; Biswas, A.; Faupel, F.; Chadderton, L.T.

    2004-01-01

    The impact of swift heavy ions onto silicon oxide and silicon oxynitride on silicon creates etchable tracks in these insulators. After their etching and filling-up with highly resistive matter, these nanometric pores can be used as charge extraction or injection paths towards the conducting channel in the underlying silicon. In this way, a novel family of electronic structures has been realized. The basic characteristics of these 'TEMPOS' (=tunable electronic material with pores in oxide on silicon) structures are summarized. Their functionality is determined by the type of insulator, the etch track diameters and lengths, their areal densities, the type of conducting matter embedded therein, and of course by the underlying semiconductor and the contact geometry. Depending on the TEMPOS preparation recipe and working point, the structures may resemble gatable resistors, condensors, diodes, transistors, photocells, or sensors, and they are therefore rather universally applicable in electronics. TEMPOS structures are often sensitive to temperature, light, humidity and organic gases. Also light-emitting TEMPOS structures have been produced. About 37 TEMPOS-based circuits such as thermosensors, photosensors, humidity and alcohol sensors, amplifiers, frequency multipliers, amplitude modulators, oscillators, flip-flops and many others have already been designed and successfully tested. Sometimes TEMPOS-based circuits are more compact than conventional electronics

  8. Vertically aligned nanowires on flexible silicone using a supported alumina template prepared by pulsed anodization

    DEFF Research Database (Denmark)

    Mátéfi-Tempfli, Stefan; Mátéfi-Tempfli, M.

    2009-01-01

    Carpets of vertically aligned nanowires on flexible substrates are successfully realized by a template method. Applying special pulsed anodization conditions, defect-free nanoporous alumina structures supported on polydimethylsiloxane (PDMS), a flexible silicone elastomer, are created. By using...... this template with nanopores ending on a conducting underlayer, a high-density nanowire array can be simply grown by direct DCelectrodeposition on the top of the silicone rubber....

  9. Gold nanorods-silicone hybrid material films and their optical limiting property

    Science.gov (United States)

    Li, Chunfang; Qi, Yanhai; Hao, Xiongwen; Peng, Xue; Li, Dongxiang

    2015-10-01

    As a kind of new optical limiting materials, gold nanoparticles have optical limiting property owing to their optical nonlinearities induced by surface plasmon resonance (SPR). Gold nanorods (GNRs) possess transversal SPR absorption and tunable longitudinal SPR absorption in the visible and near-infrared region, so they can be used as potential optical limiting materials against tunable laser pulses. In this letter, GNRs were prepared using seed-mediated growth method and surface-modified by silica coating to obtain good dispersion in polydimethylsiloxane prepolymers. Then the silicone rubber films doped with GNRs were prepared after vulcanization, whose optical limiting property and optical nonlinearity were investigated. The silicone rubber samples doped with more GNRs were found to exhibit better optical limiting performance.

  10. Cobalt nanosheet arrays supported silicon film as anode materials for lithium ion batteries

    International Nuclear Information System (INIS)

    Huang, X.H.; Wu, J.B.; Cao, Y.Q.; Zhang, P.; Lin, Y.; Guo, R.Q.

    2016-01-01

    Cobalt nanosheet arrays supported silicon film is prepared and used as anode materials for lithium ion batteries. The film is fabricated using chemical bath deposition, hydrogen reduction and radio-frequency magnetron sputtering techniques. The microstructure and morphology are characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). In this composite film, the silicon layer is supported by interconnected aligned cobalt nanosheet arrays that act as the three-dimensional current collector and buffering network. The electrochemical performance as anode materials for lithium ion batteries is investigated by cyclic voltammetry (CV) and galvanostatic charge-discharge tests. The results show that the film prepared by sputtering for 1500 s exhibits high capacity, good rate capability and stable cycle ability. It is believed that the cobalt nanosheet arrays play important roles in the electrochemical performance of the silicon layer.

  11. The effect of pulping concentration treatment on the properties of microcrystalline cellulose powder obtained from waste paper.

    Science.gov (United States)

    Okwonna, Okumneme O

    2013-10-15

    Microcrystalline cellulose (MCC) powder was isolated from three grades of waste paper: book, Groundwood/Newsprint and paperboard, through the processes of pulping and hydrolysis. Pulping treatment on these grades of waste paper was done using varying concentrations of caustic soda. Effects of the concentration of the pulping medium on the thermal and kinetic properties were investigated. Also determined were the effects of this on the physico-chemical properties. The chemical structure was characterized using an infrared spectroscopy (FTIR). Results showed these properties to be affected by the concentration of the pulping medium. Copyright © 2013 Elsevier Ltd. All rights reserved.

  12. An Enhanced Soft Vibrotactile Actuator Based on ePVC Gel with Silicon Dioxide Nanoparticles.

    Science.gov (United States)

    Park, Won-Hyeong; Shin, Eun-Jae; Yun, Sungryul; Kim, Sang-Youn

    2018-01-01

    In this paper, we propose a soft vibrotactile actuator made by mixing silicon dioxide nanoparticles and plasticized PVC gel. The effect of the silicon dioxide nanoparticles in the plasticized PVC gel for the haptic performance is investigated in terms of electric, dielectric, and mechanical properties. Furthermore, eight soft vibrotactile actuators are prepared as a function of the content. Experiments are conducted to examine the haptic performance of the prepared eight soft vibrotactile actuators and to find the best weight ratio of the plasticized PVC gel to the nanoparticles. The experiments should show that the plasticized PVC gel with silicon dioxide nanoparticles improves the haptic performance of the plasticized PVC gel-based vibrotactile actuator, and the proposed vibrotactile actuator can create a variety of haptic sensations in a wide frequency range.

  13. Metal Nanoparticles Deposited on Porous Silicon Templates as Novel Substrates for SERS

    Directory of Open Access Journals (Sweden)

    Lara Mikac

    2015-12-01

    Full Text Available In this paper, results on preparation of stable and uniform SERS solid substrates using macroporous silicon (pSi with deposited silver and gold are presented. Macroporous silicon is produced by anodisation of p-type silicon in hydrofluoric acid. The as prepared pSi is then used as a template for Ag and Au depositions. The noble metals were deposited in three different ways: by immersion in silver nitrate solution, by drop-casting silver colloidal solution and by pulsed laser ablation (PLA. Substrates obtained by different deposition processes were evaluated for SERS efficiency using methylene blue (MB and rhodamine 6G (R6G at 514.5, 633 and 785 nm. Using 514.5 nm excitation and R6G the limits of detection (LOD for macroporous Si samples with noble metal nanostructures obtained by immersion of pSi sample in silver nitrate solution and by applying silver colloidal solution to pSi template were 10–9 M and 10–8 M respectively. Using 633 nm laser and MB the most noticeable SERS activity gave pSi samples ablated with 30000 and 45000 laser pulses where the LODs of 10–10 M were obtained. The detection limit of 10–10 M was also reached for 4 mA cm–2-15 min pSi sample, silver ablated with 30000 pulses. Macroporous silicon proved to be a good base for the preparation of SERS substrates.

  14. High yield silicon carbide from alkylated or arylated pre-ceramic polymer

    International Nuclear Information System (INIS)

    Baney, R.H.; Gaul, J.H.

    1982-01-01

    Alkylated or arylated methylpolysilanes which exhibit ease of handling and are used to obtain silicon carbide ceramic materials in high yields contain 0 to 60 mole percent (CH 3 ) 2 Si double bond units and 40 to 100 mole percent CH 3 Si triple bond units, wherein there is also bonded to the silicon atoms other silicon atoms and additional alkyl radicals of 1 to 4 carbon atoms or phenyl. They may be prepared by reaction of a Grignard reagent RMgX, where X is halogen and R is Csub(1-4)-alkyl or phenyl, with a starting material which is a solid at 25 0 C, and is identical to the product except that the remaining bonds on the silicon atoms are attached to another silicon atom, or a chlorine or a bromine atom. Ceramics result from heating the polysilane products to 1200 0 C, optionally with fillers. (author)

  15. Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

    International Nuclear Information System (INIS)

    Slugen, V.; Harmatha, L.; Tapajna, M.; Ballo, P.; Pisecny, P.; Sik, J.; Koegel, G.; Krsjak, V.

    2006-01-01

    Measurements of interface trap density, effective generation lifetime (GL) and effective surface generation velocity have been performed using different methods on selected MOS structures prepared on nitrogen-doped Czochralski-grown (NCz) silicon. The application of the positron annihilation technique using a pulsed low energy positron system (PLEPS) focused on the detection of nitrogen-related defects in NCz silicon in the near surface region. In the case of p-type Cz silicon, all the results could be used for the testing of homogeneity. In n-type Cz silicon, positron annihilation was found insensitive to nitrogen doping

  16. Low cost silicon solar array project large area silicon sheet task: Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Blais, P. D.; Davis, J. R., Jr.

    1977-01-01

    Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

  17. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.

    1993-01-01

    A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

  18. Formation and properties of porous silicon layers

    International Nuclear Information System (INIS)

    Vitanov, P.; Kamenova, M.; Dimova-Malinovska, D.

    1993-01-01

    Preparation, properties and application of porous silicon films are investigated. Porous silicon structures were formed by an electrochemical etching process resulting in selective dissolution of the silicon substrate. The silicon wafers used with a resistivity of 5-10Ω.cm were doped with B to concentrations 6x10 18 -1x10 19 Ω.cm -3 in the temperature region 950 o C-1050 o C. The density of each porous films was determined from the weight loss during the anodization and it depends on the surface resistivity of the Si wafer. The density decreases with decreasing of the surface resistivity. The surface of the porous silicon layers was studied by X-ray photoelectron spectroscopy which indicates the presence of SiF 4 . The kinetic dependence of the anode potential and the porous layer thickness on the time of anodization in a galvanostatic regime for the electrolytes with various HF concentration were studied. In order to compare the properties of the resulting porous layers and to establish the dependence of the porosity on the electrolyte, three types of electrolytes were used: concentrated HF, diluted HF:H 2 O=1:1 and ethanol-hydrofluoric solutions HF:C 2 H 5 OH:H 2 O=2:1:1. High quality uniform and reproducible layers were formed using aqueous-ethanol-hydrofluoric electrolyte. Both Kikuchi's line and ring patterns were observed by TEM. The porous silicon layer was single crystal with the same orientation as the substrate. The surface shows a polycrystalline structure only. The porous silicon layers exhibit visible photoluminescence (PL) at room temperature under 480 nm Ar + laser line excitation. The peak of PL was observed at about 730 nm with FWHM about 90 nm. Photodiodes was made with a W-porous silicon junction. The current voltage and capacity voltage characteristics were similar to those of an isotype heterojunction diode. (orig.)

  19. Fluorescence studies of Rhodamine 6G functionalized silicon oxide nanostructures

    International Nuclear Information System (INIS)

    Baumgaertel, Thomas; Borczyskowski, Christian von; Graaf, Harald

    2010-01-01

    Selective anchoring of optically active molecules on nanostructured surfaces is a promising step towards the creation of nanoscale devices with new functionalities. Recently we have demonstrated the electrostatic attachment of charged fluorescent molecules on silicon oxide nanostructures prepared by atomic force microscopy (AFM) nanolithography via local anodic oxidation (LAO) of dodecyl-terminated silicon. In this paper we report on our findings from a more detailed optical investigation of the bound dye Rhodamine 6G. High sensitivity optical wide field microscopy as well as confocal laser microscopy have been used to characterize the Rhodamine fluorescence emission. A highly interesting question concerns the interaction between an emitter close to a silicon surface because mechanisms such as energy transfer and fluorescence quenching will occur which are still not fully understood. Since the oxide thickness can be varied during preparation continuously from 1 to ∼ 5 nm, it is possible to investigate the fluorescence of the bound dye in close proximity to the underlying silicon. Using confocal laser microscopy we were also able to obtain optical spectra from the bound molecules. Together with the results from an analysis of their photochemical bleaching behaviour, we conjecture that some of the Rhodamine 6G molecules on the structure are interacting with the oxide, causing a spectral shift and differences in their photochemical properties.

  20. Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching

    Directory of Open Access Journals (Sweden)

    Chien-Wei Liu

    2012-01-01

    Full Text Available Nanostructured solar cells with coaxial p-n junction structures have strong potential to enhance the performances of the silicon-based solar cells. This study demonstrates a radial junction silicon nanowire (RJSNW solar cell that was fabricated simply and at low cost using wet chemical etching. Experimental results reveal that the reflectance of the silicon nanowires (SNWs declines as their length increases. The excellent light trapping was mainly associated with high aspect ratio of the SNW arrays. A conversion efficiency of ∼7.1% and an external quantum efficiency of ∼64.6% at 700 nm were demonstrated. Control of etching time and diffusion conditions holds great promise for the development of future RJSNW solar cells. Improving the electrode/RJSNW contact will promote the collection of carries in coaxial core-shell SNW array solar cells.

  1. Silicon micro-masonry using elastomeric stamps for three-dimensional microfabrication

    International Nuclear Information System (INIS)

    Keum, Hohyun; Eisenhaure, Jeffrey D; Kim, Seok; Carlson, Andrew; Ning, Hailong; Mihi, Agustin; Braun, Paul V; Rogers, John A

    2012-01-01

    We present a micromanufacturing method for constructing microsystems, which we term ‘micro-masonry’ based on individual manipulation, influenced by strategies for deterministic materials assembly using advanced forms of transfer printing. Analogous to masonry in construction sites, micro-masonry consists of the preparation, manipulation, and binding of microscale units to assemble microcomponents and microsystems. In this paper, for the purpose of demonstration, we used microtipped elastomeric stamps as manipulators and built three dimensional silicon microstructures. Silicon units of varied shapes were fabricated in a suspended format on donors, retrieved, delivered, and placed on a target location on a receiver using microtipped stamps. Annealing of the assembled silicon units permanently bound them and completed the micro-masonry procedure. (paper)

  2. Preparation and characterization of tempered tungsten layers on single crystalline silicon

    International Nuclear Information System (INIS)

    Nitzsche, K.; Knedlik, C.; Tippmann, H.; Spiess, L.; Harman, R.; Vanek, O.; Tvarozek, V.

    1984-01-01

    Tungsten layers have been deposited on single crystalline silicon by sputtering and characterized by measurements of the sheet resistance by a linear four point method and the van der Pauw method. The influence of tempering under argon on the resistance has been studied. By means of the RBS spectroscopy it was found that the increase in the specific resistance is caused by interdiffusion

  3. DEB-silicone rubber hydrogen absorbing Raman detection technology research

    International Nuclear Information System (INIS)

    Yang Suolong; Zhong Jingrong; Wang Huang; Yang Kaixu; Xiao Jiqun; Liu Jiaxi; Liao Junsheng

    2012-01-01

    The DEB-Pd/C hydrogen getter powder and DEB-Pd/C-silicone rubber getter film were prepared and used for hydrogen detection in close systems by laser Raman method. The DEB alkanes Raman peak intensity changes with the getter time were monitored by Raman spectrometer. As a result, silicone rubber has good compatibility with DEB getter, slow access to hydrogen and good flexible. The alkanes peak intensity-getter time followed a exponential rule. DEB getter films are suitable for Raman on-line monitor of cumulative hydrogen of a closed system at long time. (authors)

  4. Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

    International Nuclear Information System (INIS)

    Li, Da; Kunz, Thomas; Wolf, Nadine; Liebig, Jan Philipp; Wittmann, Stephan; Ahmad, Taimoor; Hessmann, Maik T.; Auer, Richard; Göken, Mathias; Brabec, Christoph J.

    2015-01-01

    Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm 2 aperture area on the graphite substrate. The optical properties of the SiN x /a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiN x /a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiN x /a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance

  5. PENIS ENLARGEMENT USING SILICONE SHELL IMPLANTS

    Directory of Open Access Journals (Sweden)

    R. T. Adamyan

    2016-01-01

    Full Text Available Abstract. To date, the vast majority of penis thickening techniques based on the patient's own tissue. Methods with synthetic autotransplants are often inefficient, or accompanied by a large number of complications. In the article the technique of thickening the penis using specially designed enveloped silicone implants is described. During the procedure, silicone shell implants are inserted under the Buck’s fascia in the previously prepared tunnels. This placement of implants prevents their offset. At the moment, 15 operations is made successfully. The absolute majority of the patients are satisfied with the result. The uniqueness of the presented method is ease of performance, high efficiency with minimal rehabilitation period. The technique can be recommended for plastic surgeons and urologists. 

  6. Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Feng; Spring, Andrew M. [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Sato, Hiromu [Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Maeda, Daisuke; Ozawa, Masa-aki; Odoi, Keisuke [Nissan Chemical Industries, Ltd., 2-10-1 Tuboi Nishi, Funabashi, Chiba 274-8507 (Japan); Aoki, Isao; Otomo, Akira [National Institute of Information and Communications Technology, 588-2 Iwaoka, Nishi-ku, Kobe 651-2492 (Japan); Yokoyama, Shiyoshi, E-mail: s-yokoyama@cm.kyushu-u.ac.jp [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan)

    2015-09-21

    Ultra-thin silicon and electro-optic (EO) polymer hybrid waveguide modulators have been designed and fabricated. The waveguide consists of a silicon core with a thickness of 30 nm and a width of 2 μm. The cladding is an EO polymer. Optical mode calculation reveals that 55% of the optical field around the silicon extends into the EO polymer in the TE mode. A Mach-Zehnder interferometer (MZI) modulator was prepared using common coplanar electrodes. The measured half-wave voltage of the MZI with 7 μm spacing and 1.3 cm long electrodes is 4.6 V at 1550 nm. The evaluated EO coefficient is 70 pm/V, which is comparable to that of the bulk EO polymer film. Using ultra-thin silicon is beneficial in order to reduce the side-wall scattering loss, yielding a propagation loss of 4.0 dB/cm. We also investigated a mode converter which couples light from the hybrid EO waveguide into a strip silicon waveguide. The calculation indicates that the coupling loss between these two devices is small enough to exploit the potential fusion of a hybrid EO polymer modulator together with a silicon micro-photonics device.

  7. The fabrication of highly ordered block copolymer micellar arrays: control of the separation distances of silicon oxide dots

    Science.gov (United States)

    Yoo, Hana; Park, Soojin

    2010-06-01

    We demonstrate the fabrication of highly ordered silicon oxide dotted arrays prepared from polydimethylsiloxane (PDMS) filled nanoporous block copolymer (BCP) films and the preparation of nanoporous, flexible Teflon or polyimide films. Polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) films were annealed in toluene vapor to enhance the lateral order of micellar arrays and were subsequently immersed in alcohol to produce nano-sized pores, which can be used as templates for filling a thin layer of PDMS. When a thin layer of PDMS was spin-coated onto nanoporous BCP films and thermally annealed at a certain temperature, the PDMS was drawn into the pores by capillary action. PDMS filled BCP templates were exposed to oxygen plasma environments in order to fabricate silicon oxide dotted arrays. By addition of PS homopolymer to PS-b-P2VP copolymer, the separation distances of micellar arrays were tuned. As-prepared silicon oxide dotted arrays were used as a hard master for fabricating nanoporous Teflon or polyimide films by spin-coating polymer precursor solutions onto silicon patterns and peeling off. This simple process enables us to fabricate highly ordered nanoporous BCP templates, silicon oxide dots, and flexible nanoporous polymer patterns with feature size of sub-20 nm over 5 cm × 5 cm.

  8. The fabrication of highly ordered block copolymer micellar arrays: control of the separation distances of silicon oxide dots

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Hana; Park, Soojin, E-mail: spark@unist.ac.kr [Interdisciplinary School of Green Energy, Ulsan National Institute of Science and Technology, Banyeon-ri 100, Ulsan 689-798 (Korea, Republic of)

    2010-06-18

    We demonstrate the fabrication of highly ordered silicon oxide dotted arrays prepared from polydimethylsiloxane (PDMS) filled nanoporous block copolymer (BCP) films and the preparation of nanoporous, flexible Teflon or polyimide films. Polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) films were annealed in toluene vapor to enhance the lateral order of micellar arrays and were subsequently immersed in alcohol to produce nano-sized pores, which can be used as templates for filling a thin layer of PDMS. When a thin layer of PDMS was spin-coated onto nanoporous BCP films and thermally annealed at a certain temperature, the PDMS was drawn into the pores by capillary action. PDMS filled BCP templates were exposed to oxygen plasma environments in order to fabricate silicon oxide dotted arrays. By addition of PS homopolymer to PS-b-P2VP copolymer, the separation distances of micellar arrays were tuned. As-prepared silicon oxide dotted arrays were used as a hard master for fabricating nanoporous Teflon or polyimide films by spin-coating polymer precursor solutions onto silicon patterns and peeling off. This simple process enables us to fabricate highly ordered nanoporous BCP templates, silicon oxide dots, and flexible nanoporous polymer patterns with feature size of sub-20 nm over 5 cm x 5 cm.

  9. ATLAS SCT - Progress on the Silicon Modules

    CERN Multimedia

    Tyndel, M.

    The ATLAS SCT consists of 4088 silicon modules. Each module is made up of 4 silicon sensors with 1536 readout strips. Individual strips are connected to FE amplifiers, discriminators and pipelines on the module, i.e. there are 12 radiation hard ASICs, each containing 128 channels on the module. The sensors and the ASICs were developed for the ATLAS experiment and production is proceeding smoothly with over half the components delivered. The components of a module - 4 silicon sensors, a Cu/polyimide hybrid and pitch adaptor, and 12 ASICs - need to be carefully and precisely assembled onto a carbon and ceramic framework, which supports the module and removes the heat. Eleven production clusters are preparing to carry this out over the next two years. An important milestone for the barrel modules has been passed with the first cluster (KEK) now in production (~40 modules produced). A second cluster UK-B has qualified by producing five modules within specification (see below) and is about to start production. T...

  10. Nanopatterned Silicon Substrate Use in Heterojunction Thin Film Solar Cells Made by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Shao-Ze Tseng

    2014-01-01

    Full Text Available This paper describes a method for fabricating silicon heterojunction thin film solar cells with an ITO/p-type a-Si : H/n-type c-Si structure by radiofrequency magnetron sputtering. A short-circuit current density and efficiency of 28.80 mA/cm2 and 8.67% were achieved. Novel nanopatterned silicon wafers for use in cells are presented. Improved heterojunction cells are formed on a nanopatterned silicon substrate that is prepared with a self-assembled monolayer of SiO2 nanospheres with a diameter of 550 nm used as an etching mask. The efficiency of the nanopattern silicon substrate heterojunction cells was 31.49% greater than that of heterojunction cells on a flat silicon wafer.

  11. Clathrates and beyond: Low-density allotropy in crystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Beekman, Matt [Department of Physics, California Polytechnic State University, San Luis Obispo, California 93407 (United States); Wei, Kaya; Nolas, George S., E-mail: gnolas@usf.edu [Department of Physics, University of South Florida, Tampa, Florida 33620 (United States)

    2016-12-15

    In its common, thermodynamically stable state, silicon adopts the same crystal structure as diamond. Although only a few alternative allotropic structures have been discovered and studied over the past six decades, advanced methods for structure prediction have recently suggested a remarkably rich low-density phase space that has only begun to be explored. The electronic properties of these low-density allotropes of silicon, predicted by first-principles calculations, indicate that these materials could offer a pathway to improving performance and reducing cost in a variety of electronic and energy-related applications. In this focus review, we provide an introduction and overview of recent theoretical and experimental results related to low-density allotropes of silicon, highlighting the significant potential these materials may have for technological applications, provided substantial challenges to their experimental preparation can be overcome.

  12. Silicon diatom frustules as nanostructured photoelectrodes.

    Science.gov (United States)

    Chandrasekaran, Soundarrajan; Sweetman, Martin J; Kant, Krishna; Skinner, William; Losic, Dusan; Nann, Thomas; Voelcker, Nicolas H

    2014-09-18

    In the quest for solutions to meeting future energy demands, solar fuels play an important role. A particularly promising example is photocatalysis since even incremental improvements in performance in this process are bound to translate into significant cost benefits. Here, we report that semiconducting and high surface area 3D silicon replicas prepared from abundantly available diatom fossils sustain photocurrents and enable solar energy conversion.

  13. Modified porous silicon for electrochemical sensor of para-nitrophenol

    International Nuclear Information System (INIS)

    Belhousse, S.; Belhaneche-Bensemra, N.; Lasmi, K.; Mezaache, I.; Sedrati, T.; Sam, S.; Tighilt, F.-Z.; Gabouze, N.

    2014-01-01

    Highlights: • Hybrid device based on Porous silicon (PSi) and polythiophene (PTh) was prepared. • Three types of PSi/PTh hybrid structures were elaborated: PSi/PTh, oxide/PSi/PTh and Amino-propyltrimethoxysilane (APTMES)/oxide/PSi/PTh. • PTh was grafted on PSi using electrochemical polymerization. • The electrodetection of para-nitrophenol (p-NPh) was performed by cyclic voltammetry. • Oxide/PSi/PTh and APTMES/oxide/PSi/PTh, based electrochemical sensor showed a good response toward p-NPh. - Abstract: Hybrid structures based on polythiophene modified porous silicon was used for the electrochemical detection of para-nitrophenol, which is a toxic derivative of parathion insecticide and it is considered as a major toxic pollutant. The porous silicon was prepared by anodic etching in hydrofluodic acid. Polythiophene films were then grown by electropolymerisation of thiophene monomer on three different surfaces: hydrogenated PSi, oxidized PSi and amine-terminated PSi. The morphology of the obtained structures were observed by scanning electron microscopy and characterized by spectroscopy (FTIR). Cyclic voltammetry was used to study the electrochemical response of proposed structures to para-nitrophenol. The results show a high sensitivity of the sensor and a linearity of the electrochemical response in a large concentration interval ranging from 1.5 × 10 −8 M to the 3 × 10 −4 M

  14. Observing the morphology of single-layered embedded silicon nanocrystals by using temperature-stable TEM membranes

    Directory of Open Access Journals (Sweden)

    Sebastian Gutsch

    2015-04-01

    Full Text Available We use high-temperature-stable silicon nitride membranes to investigate single layers of silicon nanocrystal ensembles by energy filtered transmission electron microscopy. The silicon nanocrystals are prepared from the precipitation of a silicon-rich oxynitride layer sandwiched between two SiO2 diffusion barriers and subjected to a high-temperature annealing. We find that such single layers are very sensitive to the annealing parameters and may lead to a significant loss of excess silicon. In addition, these ultrathin layers suffer from significant electron beam damage that needs to be minimized in order to image the pristine sample morphology. Finally we demonstrate how the silicon nanocrystal size distribution develops from a broad to a narrow log-normal distribution, when the initial precipitation layer thickness and stoichiometry are below a critical value.

  15. STM-excited luminescence of porous and spark-processed silicon

    International Nuclear Information System (INIS)

    Andrienko, I.; Kuznetsov, V.; Yuan, J.; Haneman, D.

    1998-01-01

    Full text: Scanning tunneling microscopy (STM) permits highly local electronic excitation of light emission (LE) from the surface of silicon. Measuring STM LE, one can study simultaneously both the topography and the luminescence properties of areas down to nm dimensions and thus make conclusions about the luminescence mechanism of the material. We have built an STM spectroscopy system which allows measurement of spectra of visible light emitted from areas as small as 13 x 13 nm 2 (porous silicon) and 10 x 10 nm 2 (spark-processed silicon). Porous silicon shows a broad emission band centered at 630 nm, and spark-processed silicon, one at 690 nm. The STM LE spectra of spark-processed silicon obtained for the first time. We have found that visible light is emitted only from areas containing nanometer-scale structures down to around 2 nm in diameter. STM LE occurs under negative bias voltage applied to the tip, i.e. when electrons are injected into the sample. Other workers used p-type silicon for the sample preparations, but it has been found that STM LE can be induced also from n-type silicon. Furthermore, we have shown that STM LE spectra can be resolved using much lover voltages and tunneling currents: -(7-9) V and 25 - 50 nA vs -(25-50) V and 100 nA. To consider different excitation mechanisms, the STM LE measurements are compared with photoluminescence and electroluminescence spectra of similar samples. We suggest that excitation of individual quantum confinement structures has been observed

  16. A study of the compressibility and properties of tablets from co-processed dry binder composed of microcrystalline cellulose and glyceryl monostearate.

    OpenAIRE

    Muchová, Sandra

    2013-01-01

    The paper studies the co-processed dry binder LubriTose™ MCC from the viewpoint of energy evaluation of the compression process, strength and disintegration time of tablets. The results were compared with the identical evaluation of physical mixtures of microcrystalline cellulose with several types of lubricants. LubriTose™ MCC showed the lowest value of energy for friction, the highest value of energy accumulated by the tablet, and the highest plasticity of all tableting materials under stud...

  17. Converting sunlight into red light in fluorosilicate glass for amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ming, Chengguo, E-mail: mingchengguo1978@163.com [Physics Department, School of Sciences, Tianjin University of Science & Technology, Tianjin 300457 (China); Song, Feng [Photonics Center, College of Physical Science, Nankai University, Tianjin 300071 (China); Ren, Xiaobin [Physics Department, School of Sciences, Tianjin University of Science & Technology, Tianjin 300457 (China); Yuan, Fengying; Qin, Yueting [Physics Department, School of Sciences, Tianjin University of Science & Technology, Tianjin 300457 (China); Photonics Center, College of Physical Science, Nankai University, Tianjin 300071 (China); An, Liqun; Cai, Yuanxue [Physics Department, School of Sciences, Tianjin University of Science & Technology, Tianjin 300457 (China)

    2017-03-15

    Fluorosilicate glass was prepared by high-temperature melting method to explore highly efficient luminescence materials for amorphous silicon solar cells. Absorption, excitation and emission spectra of the glass were measured. The optical characters of the glass were discussed in details. The glass can efficiently convert sunlight into red light. Our glass can be applied to amorphous silicon solar cells as a converter of solar spectrum.

  18. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  19. Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

    Science.gov (United States)

    Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

    2018-03-01

    Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

  20. LHCb: Installation and operation of the LHCb Silicon Tracker detector

    CERN Multimedia

    Esperante Pereira, D

    2009-01-01

    The LHCb experiment has been designed to perform high-precision measurements of CP violation and rare decays of B hadrons. The construction and installation phases of the Silicon Tracker (ST) of the experiment were completed by early summer 2008. The LHCb Silicon Tracker sums up to a total sensitive area of about 12 m^2 using silicon micro-strip technology and withstands charged particle fluxes of up to 5 x 10^5cm^−2s^−1. We will report on the preparation of the detectors for the first LHC beams. Selected results from the commissioning in LHCb are shown, including the first beam-related events accumulated during LHC injection tests in September 2008. Lessons are drawn from the experience gathered during the installation and commissioning.

  1. Surface microstructure and cell biocompatibility of silicon-substituted hydroxyapatite coating on titanium substrate prepared by a biomimetic process

    International Nuclear Information System (INIS)

    Zhang Erlin; Zou Chunming; Yu Guoning

    2009-01-01

    Silicon-substituted hydroxyapatite (Si-HA) coatings with 0.14 to 1.14 at.% Si on pure titanium were prepared by a biomimetic process. The microstructure characterization and the cell compatibility of the Si-HA coatings were studied in comparison with that of hydroxyapatite (HA) coating prepared in the same way. The prepared Si-HA coatings and HA coating were only partially crystallized or in nano-scaled crystals. The introduction of Si element in HA significantly reduced P and Ca content, but densified the coating. The atom ratio of Ca to (P + Si) in the Si-HA coatings was in a range of 1.61-1.73, increasing slightly with an increase in the Si content. FTIR results displayed that Si entered HA in a form of SiO 4 unit by substituting for PO 4 unit. The cell attachment test showed that the HA and Si-HA coatings exhibited better cell response than the uncoated titanium, but no difference was observed in the cell response between the HA coating and the Si-HA coatings. Both the HA coating and the Si-HA coatings demonstrated a significantly higher cell growth rate than the uncoated pure titanium (p < 0.05) in all incubation periods while the Si-HA coating exhibited a significantly higher cell growth rate than the HA coating (p < 0.05). Si-HA with 0.42 at.% Si presented the best cell biocompatibility in all of the incubation periods. It was suggested that the synthesis mode of HA and Si-HA coatings in a simulated body environment in the biomimetic process contribute significantly to good cell biocompatibility

  2. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  3. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

    2015-01-01

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  4. Mesoporous silicon synthesis and applications in Li-ion batteries and solar hydrogen fuel cells

    Science.gov (United States)

    Wang, Donghai; Dai, Fang; Yi, Ran; Zai, Jianto

    2017-05-23

    We provide a mesoporous silicon material (PSi) prepared via a template-free and HF-free process. The production process is facile and scalable, and it may be conducted under mild reaction conditions. The silicon may be produced directly by the reduction of a silicon-halogenide precursor (for example, SiCl.sub.4) with an alkaline alloy (for example, NaK alloy). The resulting Si-salt matrix is then annealed for the pore formation and crystallite growth. Final product is obtained by removal of the salt by-products with water.

  5. Studies of pulsed laser melting and rapid solidification using amorphous silicon

    International Nuclear Information System (INIS)

    Lowndes, D.H.; Wood, R.F.

    1984-06-01

    Pulsed-laser melting of ion implantation-amorphized silicon layers, and subsequent solidification were studied. Measurements of the onset of melting of amorphous silicon layers and of the duration of melting, and modified melting model calculations demonstrated that the thermal conductivity, K/sub a/, of amorphous silicon is very low (K/sub a/ approx. = 0.02 W/cm-K). K/sub a/ is also the dominant parameter determining the dynamical response of amorphous silicon to pulsed laser radiation. TEM indicates that bulk (volume) nucleation occurs directly from the highly undercooled liquid silicon that can be prepared by pulsed laser melting of amorphous silicon layers at low laser energy densities. A modified thermal melting model is presented. The model calculations demonstrate that the release of latent heat by bulk nucleation occurring during the melt-in process is essential to obtaining agreement with observed depths of melting. These calculations also show that this release of latent heat accompanying bulk nucleation can result in the existence of buried molten layers of silicon in the interior of the sample after the surface has solidified. The bulk nucleation implies that the liquid-to-amorphous phase transition (produced using picosecond or uv nanosecond laser pulses) cannot be explained using purely thermodynamic considerations

  6. Filament poisoning at typical carbon nanotube deposition conditions by hot-filament CVD

    CSIR Research Space (South Africa)

    Oliphant, CJ

    2009-05-01

    Full Text Available extensively used for the deposition of various materials, including diamond [1], polymers [2], silicon thin films [3], boron-carbon-nitride layers [4] and carbon nanotubes (CNTs) [5]. The process relies on the catalytic decomposition of precursor gases... (Ho) twice as efficient as a W filament during the deposition of microcrystalline silicon thin films [6]. Reactions between the precursor gases and the heated filament result in changes of the structural properties of the filaments; a process...

  7. Morphology of the porous silicon obtained by electrochemical anodization method

    Science.gov (United States)

    Bertel H, S. D.; Dussán C, A.; Diaz P, J. M.

    2018-04-01

    In this report, the dependence of porous silicon with the synthesis parameters and their correlation with the optical and morphological properties is studied. The P-type silicon-crystalline samples and orientation were prepared by electrochemical anodization and were characterized using SEM in order to know the evolution of the pore morphology. It was observed that the porosity and thickness of the samples increased with the increase of the concentration in the solution and a high pore density (70%) with a pore size between 40nm and 1.5μm.

  8. Effective antireflection properties of porous silicon nanowires for photovoltaic applications

    KAUST Repository

    Najar, Adel; Al-Jabr, Ahmad; Alsunaidi, Mohammad; Anjum, Dalaver H.; Ng, Tien Khee; Ooi, Boon S.; Ben Slimane, Ahmed; Sougrat, Rachid

    2013-01-01

    Porous silicon nanowires (PSiNWs) have been prepared by metal-assisted chemical etching method on the n-Si substrate. The presence of nano-pores with pore size ranging between 10-50nm in SiNWs was confirmed by electron tomography (ET

  9. Sintering of nano crystalline o silicon carbide doping with

    Indian Academy of Sciences (India)

    Sinterable silicon carbide powders were prepared by attrition milling and chemical processing of an acheson type -SiC. Pressureless sintering of these powders was achieved by addition of aluminium nitride together with carbon. Nearly 99% sintered density was obtained. The mechanism of sintering was studied by ...

  10. Selective Growth and SERS Property of Gold Nanoparticles on Amorphized Silicon Surface

    International Nuclear Information System (INIS)

    Matsuoka, T; Nishi, M; Sakakura, M; Shimotsuma, Y; Miura, K; Hirao, K

    2011-01-01

    We have fabricated gold patterns on a silicon substrate by a simple three-step method using a focused ion beam (FIB). The obtained gold patterns consisted of a large number of gold nanoparticles which grew selectively on the preprocessed silicon surface from an Au ion-containing solution dropped on the substrate. The solution was prepared by reacting HAuCl 4 aqueous solution with (3-mercaptopropyl)trimethoxysilane (MPTMS). It was found that the size and shape of the precipitating gold nanoparticles is controllable by changing the mixing ratio between HAuCl 4 aqueous solution and MPTMS. Additionally, we confirmed that the fabricated gold structures were surface enhanced Raman scattering (SERS)-active; the enhanced Raman peaks of rhodamin 6G (R6G) were detected on the fabricated gold structures, whereas no peak was detected on the alternative silicon surface. We also demonstrated the gold patterning using a femtosecond laser instead of an FIB. We believe that our method is a favorable candidate for fabricating SERS-active substrates, since the substrates can be prepared very simply and flexibly.

  11. Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

    Energy Technology Data Exchange (ETDEWEB)

    Wang Guigen, E-mail: wanggghit@yahoo.com [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Kuang Xuping; Zhang Huayu; Zhu Can [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Han Jiecai [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Zuo Hongbo [Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Ma Hongtao [SAE Technologies Development (Dongguan) Co., Ltd., Dongguan 523087 (China)

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. Black-Right-Pointing-Pointer It highlighted the influences of Si-N underlayers. Black-Right-Pointing-Pointer The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of -150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of -150 V, can provide better corrosion protection for high-density magnetic recording sliders.

  12. Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

    International Nuclear Information System (INIS)

    Wang Guigen; Kuang Xuping; Zhang Huayu; Zhu Can; Han Jiecai; Zuo Hongbo; Ma Hongtao

    2011-01-01

    Highlights: ► The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. ► It highlighted the influences of Si-N underlayers. ► The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of −150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of −150 V, can provide better corrosion protection for high-density magnetic recording sliders.

  13. Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications

    Directory of Open Access Journals (Sweden)

    R. W. Wu

    2016-02-01

    Full Text Available Silicon microwires with lateral dimension from 5 μm to 20 μm and depth as long as 20 μm are prepared by bilayer metal assisted chemical etching (MaCE. A bilayer metal configuration (Metal 1 / Metal 2 was applied to assist etching of Si where metal 1 acts as direct catalyst and metal 2 provides mechanical support. Different metal types were investigated to figure out the influence of metal catalyst on morphology of etched silicon. We find that silicon microwires with vertical side wall are produced when we use Ag/Au bilayer, while cone–like and porous microwires formed when Pt/Au is applied. The different micro-/nano-structures in as-etched silicon are demonstrated to be due to the discrepancy of work function of metal catalyst relative to Si. Further, we constructed a silicon microwire arrays solar cells in a radial p–n junction configurations in a screen printed aluminum paste p–doping process.

  14. Crystallization of HWCVD amorphous silicon thin films at elevated temperatures

    CSIR Research Space (South Africa)

    Muller, TFG

    2006-01-01

    Full Text Available conditions where the hydrogen content would be minimal and the films would still exhibit good optical properties. Experimental data shows that by varying deposition conditions the transition to the nano/microcrystalline phase can be achieved. Transitional...

  15. All-(111) surface silicon nanowire field effect transistor devices: Effects of surface preparations

    NARCIS (Netherlands)

    Masood, M.N.; Carlen, Edwin; van den Berg, Albert

    2014-01-01

    Etching/hydrogen termination of All-(111) surface silicon nanowire field effect (SiNW-FET) devices developed by conventional photolithography and plane dependent wet etchings is studied with X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and

  16. Production of rare earth-silicon-iron alloys

    International Nuclear Information System (INIS)

    Mehra, O.K.; Bose, D.K.; Gupta, C.K.

    1987-01-01

    At Metallurgy Division, BARC, improved procedures for producing rare earth-silicon alloys have been investigated. In these methods, reduction of mixed rare earth oxide by a ferro-silicon and aluminium mixture in combination with CaO-MgO flux/CaO-CaF 2 flux have been tried to prepare an alloy product with a higher rare earth recovery at a higher rare earth content than the present commercial production method. The rare earth recovery using CaO-CaF 2 was 85 per cent while in the case of CaO-MgO flux it was 76 per cent. The corresponding rare earth contents in the alloy correspond to 40 per cent and 55 per cent by weight respectively. (author)

  17. Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate

    Directory of Open Access Journals (Sweden)

    Kyosuke Seya

    2015-01-01

    Full Text Available The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.

  18. Study of granitic biotites by X-ray fluorescence analysis: determination of iron, manganese, titanium, calcium, potassium, silicon and aluminium

    International Nuclear Information System (INIS)

    Toubes, R. O.; Bermudez Polonio, J.

    1968-01-01

    A method for the quantitative determination of iron, manganese, titanium, calcium potassium, silicon, and aluminium, is reported, Sample preparation is carried out by the miniature flux technique, and rubidium is used as internal standard for silicon and aluminium. (Author) 5 refs

  19. Preparation of silicon oxynitrocarbide (SiONC) and of its ceramic-fibre-composites via hydrosilylation/radical polymerization/pyrolysis

    Czech Academy of Sciences Publication Activity Database

    Strachota, Adam; Černý, Martin; Chlup, Zdeněk; Šlouf, Miroslav; Brus, Jiří; Pleštil, Josef; Sucharda, Zbyněk; Havelcová, Martina; Halasová, Martina

    423-424, 1 September (2015), s. 9-17 ISSN 0022-3093 R&D Projects: GA ČR GAP107/12/2445 Institutional support: RVO:61389013 ; RVO:67985891 ; RVO:68081723 Keywords : silicon oxynitrocarbide * silicon oxycarbide * hydrosilylation Subject RIV: CD - Macromolecular Chemistry; JI - Composite Materials (USMH-B); JL - Materials Fatigue, Friction Mechanics (UFM-A) Impact factor: 1.825, year: 2015

  20. Passivation properties of alumina for multicrystalline silicon nanostructure prepared by spin-coating method

    Science.gov (United States)

    Jiang, Ye; Shen, Honglie; Yang, Wangyang; Zheng, Chaofan; Tang, Quntao; Yao, Hanyu; Raza, Adil; Li, Yufang; Huang, Chunlai

    2018-02-01

    In this paper, we report passivation properties of inverted pyramidal nanostructure based multi-crystalline silicon (mc-Si) by Al2O3 films with spin-coating method. Precursors AlCl3 and Al(acac)3 for Al2O3 films were chosen for comparison. Al2O3/SiO x stacks were found to be able to passivate the nanostructured surface well. With the number of spin-coating up to five, the Al2O3 films could conformally attach the nanostructure. The weighted average reflectance values (ranging from 400-900 nm) of the passivated silicon surface could be reduced to 10.74% (AlCl3) and 11.12% (Al(acac)3), and the effective carrier lifetime could reach 7.84 and 16.98 μs, respectively. This work presented a potential process to fabricate low cost high efficiency mc-Si solar cells.

  1. Use of the microcrystalline limestone as building material: the "GrisPulpis"case

    Directory of Open Access Journals (Sweden)

    García del Cura, M. A.

    2005-03-01

    Full Text Available Gris Pulpis is a Jurassic microcrystalline limestone found in the Maestrazgo Area of the Iberian Mountain Range (province of Castellón, Spain. This paper reports the results of a detailed study of the mineralogical, pelrographic and chromatic characteristics, as well as the durability, of this stone, classified as a commercial marble for its polish ability. The study determined the relationship between the structural characteristics of the stone, with a proliferation of stylolites and veins, and its physical properties. Its flexura I strength was found to be greater than would normally be expected in a structure with such a dense web of stylolites and veins. This is due to the structural and mineralogical properties of these stylolites, characterised by an extremely wavy design, scant mineral infillings and, occasionally, subsequent cementation. The characteristics of the porous media of homogeneous microcrystalline limestones such as Gris Pulpis largely explain the durability of this stone when exposed to freeze-thaw cycles and salt crystallisation. These arc the properties that make Gris Pulpis limestone, quarried in the Spanish Region of Valencia, a valuable building material for both architectural and civil engineering applications

    En este trabajo se analizan las propiedades físicas y la durabilidad de una caliza microcristalina.El Gris Pulpis es una caliza microcristalina del Jurásico de la Cordillera Ibérica (Maestrazgo, cuyas características mineralógicas, petrográficas, cromáticas y alterabilidad se determinan detalladamente. Su aptitud para el pulido hace que sea un mármol comercial. Se establece la influencia de sus características estructurales (estilolitos, vénulas... en sus propiedades físicas. Su resistencia a flexión supera los valores que cabría esperar en función de la estructura de esta roca que, a veces, presenta abundantes estilolitos y vénulas. Esto es debido a las características estructurales y

  2. Silicon epitaxy on textured double layer porous silicon by LPCVD

    International Nuclear Information System (INIS)

    Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

    2010-01-01

    Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

  3. Light-induced defect creation in hydrogenated polymorphous silicon

    International Nuclear Information System (INIS)

    Morigaki, K.; Takeda, K.; Hikita, H.; Roca i Cabarrocas, P.

    2005-01-01

    Light-induced defect creation in hydrogenated polymorphous silicon (pm-Si:H) is investigated from electron spin resonance measurements and is compared with that in hydrogenated amorphous silicon (a-Si:H). Light-induced defect creation occurs at room temperature similarly for both types of films prepared at 250 deg. C. Thermal annealing of light-induced defects is also investigated as a function of temperature. Different behaviours of annealing characteristics for pm-Si:H from those for a-Si:H are observed and discussed. In particular, we observed a decrease of the light-induced defect creation efficiency with repeated light-soaking-annealing cycles and discuss it with respect to the hydrogen bonding in pm-Si:H films

  4. SEM and HRTEM study of porous silicon--relationship between fabrication, morphology and optical properties

    International Nuclear Information System (INIS)

    Dian, J.; Macek, A.; Niznansky, D.; Nemec, I.; Vrkoslav, V.; Chvojka, T.; Jelinek, I.

    2004-01-01

    We studied the dependence of porous silicon (PS) morphology on fabrication conditions and the link between morphology, porosity and optical properties. P-type (1 0 0) silicon wafers with resistivity of 10 Ω cm were electrochemically etched in a HF:ethanol:water mixture at various HF concentrations and current densities. Porosity and thickness of the samples were determined gravimetrically. Detailed information about evolution of porous silicon layer morphology with variation of preparation conditions was obtained by scanning electron microscope (SEM), the presence of silicon nanoparticles was confirmed by high resolution transmission electron microscopy. Decrease of the mean size of silicon nanoparticles with increasing porous silicon porosity was revealed in a monotonous blue shift of photoluminescence (PL) maximum in room temperature photoluminescence spectra of studied samples. This blue shift is consistent with quantum confinement model of photoluminescence mechanism. We observed that total porosity of porous films cannot fully explain observed photoluminescence behavior and correct interpretation of the blue shift of photoluminescence spectra requires detailed knowledge of porous silicon morphology

  5. Characterization of 10 μm thick porous silicon dioxide obtained by complex oxidation process for RF application

    International Nuclear Information System (INIS)

    Park, Jeong-Yong; Lee, Jong-Hyun

    2003-01-01

    This paper proposes a 10 μm thick oxide layer structure, which can be used as a substrate for RF circuits. The structure has been fabricated by anodic reaction and complex oxidation, which is a combined process of low temperature thermal oxidation (500 deg. C, for 1 h at H 2 O/O 2 ) and a rapid thermal oxidation (RTO) process (1050 deg. C, for 1 min). The electrical characteristics of oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current through the OPSL of 10 μm was about 100-500 pA in the range of 0-50 V. The average value of breakdown field was about 3.9 MV cm -1 . From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL, prepared by complex process were confirmed to be completely oxidized and also the role of RTO process was important for the densification of porous silicon layer (PSL) oxidized at a lower temperature. For the RF-test of Si substrate with thick silicon dioxide layer, we have fabricated high performance passive devices such as coplanar waveguide (CPW) on OPSL substrate. The insertion loss of CPW on OPSL prepared by complex oxidation process was -0.39 dB at 4 GHz and similar to that of CPW on OPSL prepared by a temperature of 1050 deg. C (1 h at H 2 O/O 2 ). Also the return loss of CPW on OPSL prepared by complex oxidation process was -23 dB at 10 GHz, which is similar to that of CPW on OPSL prepared by high temperature

  6. Silicon nanocrystals embedded in silicon carbide for tandem solar cell applications

    International Nuclear Information System (INIS)

    Schnabel, Manuel

    2015-01-01

    Tandem solar cells consist of multiple individual solar cells stacked in order of increasing bandgap, with the cell with highest bandgap towards the incident light. This allows photons to be absorbed in the cell that will convert them to electricity with the greatest efficiency, and is the only solar cell concept to surpass the theoretical efficiency limit of a conventional solar cell so far. This work is concerned with the development of silicon nanocrystals (Si NCs) embedded in silicon carbide, which are expected to have a higher bandgap than bulk Si due to quantum confinement, for use in the top cell of a two-junction tandem cell. Charge carrier transport and recombination were investigated as a function of various parameters. Distortion of luminescence spectra by optical interference was highlighted and a robust model to describe transport of majority carriers was developed. Furthermore, a range of processing steps required to produce a Si NC-based tandem cell were studied, culminating in the preparation of the first Si NC-based tandem cells. The resulting cells exhibited open-circuit voltages of 900 mV, demonstrating tandem cell functionality.

  7. Modified porous silicon for electrochemical sensor of para-nitrophenol

    Energy Technology Data Exchange (ETDEWEB)

    Belhousse, S., E-mail: all_samia_b@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria); Belhaneche-Bensemra, N., E-mail: nbelhaneche@yahoo.fr [Ecole Nationale Polytechnique (ENP), 10, Avenue Hassen Badi, B.P. 182, 16200, El Harrach, Algiers (Algeria); Lasmi, K., E-mail: kahinalasmi@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria); Mezaache, I., E-mail: lyeso_44@hotmail.fr [Ecole Nationale Polytechnique (ENP), 10, Avenue Hassen Badi, B.P. 182, 16200, El Harrach, Algiers (Algeria); Sedrati, T., E-mail: tarek_1990m@hotmail.fr [Ecole Nationale Polytechnique (ENP), 10, Avenue Hassen Badi, B.P. 182, 16200, El Harrach, Algiers (Algeria); Sam, S., E-mail: Sabrina.sam@polytechnique.edu [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria); Tighilt, F.-Z., E-mail: mli_zola@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria); Gabouze, N., E-mail: ngabouze@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria)

    2014-11-15

    Highlights: • Hybrid device based on Porous silicon (PSi) and polythiophene (PTh) was prepared. • Three types of PSi/PTh hybrid structures were elaborated: PSi/PTh, oxide/PSi/PTh and Amino-propyltrimethoxysilane (APTMES)/oxide/PSi/PTh. • PTh was grafted on PSi using electrochemical polymerization. • The electrodetection of para-nitrophenol (p-NPh) was performed by cyclic voltammetry. • Oxide/PSi/PTh and APTMES/oxide/PSi/PTh, based electrochemical sensor showed a good response toward p-NPh. - Abstract: Hybrid structures based on polythiophene modified porous silicon was used for the electrochemical detection of para-nitrophenol, which is a toxic derivative of parathion insecticide and it is considered as a major toxic pollutant. The porous silicon was prepared by anodic etching in hydrofluodic acid. Polythiophene films were then grown by electropolymerisation of thiophene monomer on three different surfaces: hydrogenated PSi, oxidized PSi and amine-terminated PSi. The morphology of the obtained structures were observed by scanning electron microscopy and characterized by spectroscopy (FTIR). Cyclic voltammetry was used to study the electrochemical response of proposed structures to para-nitrophenol. The results show a high sensitivity of the sensor and a linearity of the electrochemical response in a large concentration interval ranging from 1.5 × 10{sup −8} M to the 3 × 10{sup −4}M.

  8. Characterization of Ge Nano structures Embedded Inside Porous Silicon for Photonics Application

    International Nuclear Information System (INIS)

    Rahim, A.F.A.; Hashim, M.R.; Rahim, A.F.A.; Ali, N.K.

    2011-01-01

    In this work we prepared germanium nano structures by means of filling the material inside porous silicon (PS) using conventional and cost effective technique, thermal evaporator. The PS acts as patterned substrate. It was prepared by anodization of silicon wafer in ethanoic hydrofluoric acid (HF). A Ge layer was then deposited onto the PS by thermal evaporation. This was followed by deposition of Si layer by thermal evaporation and anneal at 650 degree Celsius for 30 min. The process was completed by Ni metal deposition using thermal evaporator followed by metal annealing of 400 degree Celsius for 10 min to form metal semiconductor metal (MSM) photodetector. Structural analysis of the samples was performed using energy dispersive x-ray analysis (EDX), scanning electron microscope (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS). EDX spectrum suggests the presence of Ge inside the pores structure. Raman spectrum showed that good crystalline structure of Ge can be produced inside silicon pores with a phase with the diamond structure by (111), (220) and (400) reflections. Finally current-voltage (I-V) measurement of the MSM photodetector was carried out and showed lower dark currents compared to that of Si control device. Interestingly the device showed enhanced current gain compared to Si device which can be associated with the presence of Ge nano structures in the porous silicon. (author)

  9. Correlating the silicon surface passivation to the nanostructure of low-temperature a-Si:H after rapid thermal annealing

    NARCIS (Netherlands)

    Macco, B.; Melskens, J.; Podraza, N.J.; Arts, K.; Pugh, C.; Thomas, O.; Kessels, W.M.M.

    2017-01-01

    Using an inductively coupled plasma, hydrogenated amorphous silicon (a-Si:H) films have been prepared at very low temperatures (<50 °C) to provide crystalline silicon (c-Si) surface passivation. Despite the limited nanostructural quality of the a-Si:H bulk, a surprisingly high minority carrier

  10. Silicon nanomaterials platform for bioimaging, biosensing, and cancer therapy.

    Science.gov (United States)

    Peng, Fei; Su, Yuanyuan; Zhong, Yiling; Fan, Chunhai; Lee, Shuit-Tong; He, Yao

    2014-02-18

    Silicon nanomaterials are an important class of nanomaterials with great potential for technologies including energy, catalysis, and biotechnology, because of their many unique properties, including biocompatibility, abundance, and unique electronic, optical, and mechanical properties, among others. Silicon nanomaterials are known to have little or no toxicity due to favorable biocompatibility of silicon, which is an important precondition for biological and biomedical applications. In addition, huge surface-to-volume ratios of silicon nanomaterials are responsible for their unique optical, mechanical, or electronic properties, which offer exciting opportunities for design of high-performance silicon-based functional nanoprobes, nanosensors, and nanoagents for biological analysis and detection and disease treatment. Moreover, silicon is the second most abundant element (after oxygen) on earth, providing plentiful and inexpensive resources for large-scale and low-cost preparation of silicon nanomaterials for practical applications. Because of these attractive traits, and in parallel with a growing interest in their design and synthesis, silicon nanomaterials are extensively investigated for wide-ranging applications, including energy, catalysis, optoelectronics, and biology. Among them, bioapplications of silicon nanomaterials are of particular interest. In the past decade, scientists have made an extensive effort to construct a silicon nanomaterials platform for various biological and biomedical applications, such as biosensors, bioimaging, and cancer treatment, as new and powerful tools for disease diagnosis and therapy. Nonetheless, there are few review articles covering these important and promising achievements to promote the awareness of development of silicon nanobiotechnology. In this Account, we summarize recent representative works to highlight the recent developments of silicon functional nanomaterials for a new, powerful platform for biological and

  11. Beam test performance and simulation of prototypes for the ALICE silicon pixel detector

    International Nuclear Information System (INIS)

    Conrad, J.; Anelli, G.; Antinori, F.

    2007-01-01

    The silicon pixel detector (SPD) of the ALICE experiment in preparation at the Large Hadron Collider (LHC) at CERN is designed to provide the precise vertex reconstruction needed for measuring heavy flavor production in heavy ion collisions at very high energies and high multiplicity. The SPD forms the innermost part of the Inner Tracking System (ITS) which also includes silicon drift and silicon strip detectors. Single assembly prototypes of the ALICE SPD have been tested at the CERN SPS using high energy proton/pion beams in 2002 and 2003. We report on the experimental determination of the spatial precision. We also report on the first combined beam test with prototypes of the other ITS silicon detector technologies at the CERN SPS in November 2004. The issue of SPD simulation is briefly discussed

  12. Production of electronic grade lunar silicon by disproportionation of silicon difluoride

    Science.gov (United States)

    Agosto, William N.

    1993-01-01

    Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

  13. Radiation cured silicone rubber articles

    International Nuclear Information System (INIS)

    DuPont, J.G.; Goodwin, P.A.

    1984-01-01

    A process for making radiation cured silicone rubber articles is disclosed wherein a hydroxyl-terminated polysilaxane having a molecular weight from about 50,000 to about 2,000,000, optionally modified by mixing with up to 85% of an end-stopped silicone rubber, is mixed with from about 10 to about 70 parts per hundred of rubber of a finely divided silica filler with a particle size in the reinforcing range and other inert fillers as determined by desired final properties; the composition so prepared is formed into the desired shape at room temperature; the article so formed is precured to improve the mechanical properties of the material with which it is made by exposure to ammonia gas, ammonium hydroxide, or to the vapors or solutions of a volatile amine at room temperature; and the precured article is irradiated with high energy electrons or gamma radiation to effect a permanent cure of the material from which the article is formed

  14. Doping efficiency analysis of highly phosphorous doped epitaxial/amorphous silicon emitters grown by PECVD for high efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    El-Gohary, H.G.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering

    2008-08-15

    The efficient doping of hydrogenated amorphous and crystalline silicon thin films is a key factor in the fabrication of silicon solar cells. The most popular method for developing those films is plasma enhanced chemical vapor deposition (PECVD) because it minimizes defect density and improves doping efficiency. This paper discussed the preparation of different structure phosphorous doped silicon emitters ranging from epitaxial to amorphous films at low temperature. Phosphine (PH{sub 3}) was employed as the doping gas source with the same gas concentration for both epitaxial and amorphous silicon emitters. The paper presented an analysis of dopant activation by applying a very short rapid thermal annealing process (RTP). A spreading resistance profile (SRP) and SIMS analysis were used to detect both the active dopant and the dopant concentrations, respectively. The paper also provided the results of a structural analysis for both bulk and cross-section at the interface using high-resolution transmission electron microscopy and Raman spectroscopy, for epitaxial and amorphous films. It was concluded that a unity doping efficiency could be achieved in epitaxial layers by applying an optimized temperature profile using short time processing rapid thermal processing technique. The high quality, one step epitaxial layers, led to both high conductive and high doping efficiency layers.

  15. Influence of the doping level on the porosity of silicon nanowires prepared by metal-assisted chemical etching

    International Nuclear Information System (INIS)

    Geyer, Nadine; Wollschläger, Nicole; Tonkikh, Alexander; Berger, Andreas; Werner, Peter; Fuhrmann, Bodo; Leipner, Hartmut S; Jungmann, Marco; Krause-Rehberg, Reinhard

    2015-01-01

    A systematic method to control the porosity of silicon nanowires is presented. This method is based on metal-assisted chemical etching (MACE) and takes advantage of an HF/H_2O_2 etching solution and a silver catalyst in the form of a thin patterned film deposited on a doped silicon wafer. It is found that the porosity of the etched nanowires can be controlled by the doping level of the wafer. For low doping concentrations, the wires are primarily crystalline and surrounded by only a very thin layer of porous silicon (pSi) layer, while for highly doped silicon, they are porous in their entire volume. We performed a series of controlled experiments to conclude that there exists a well-defined critical doping concentration separating the crystalline and porous regimes. Furthermore, transmission electron microscopy investigations showed that the pSi has also a crystalline morphology on a length scale smaller than the pore size, determined from positron annihilation lifetime spectroscopy to be mesoscopic. Based on the experimental evidence, we devise a theoretical model of the pSi formation during MACE and apply it for better control of the nanowire morphology. (paper)

  16. Influence of silicon on hot-dip aluminizing process and subsequent oxidation for preparing hydrogen/tritium permeation barrier

    Energy Technology Data Exchange (ETDEWEB)

    Han, Shilei; Li, Hualing; Wang, Shumao; Jiang, Lijun; Liu, Xiaopeng [Energy Materials and Technology Research Institute, General Research Institute for Nonferrous Metals, Beijing 100088 (China)

    2010-04-15

    The development of the International Thermonuclear Experimental Reactor (ITER) requires the production of a material capable of acting as a hydrogen/tritium permeation barrier on low activation steel. It is well known that thin alumina layer can reduce the hydrogen permeation rate by several orders of magnitude. A technology is introduced here to form a ductile Fe/Al intermetallic layer on the steel with an alumina over-layer. This technology, consisting of two main steps, hot-dip aluminizing (HDA) and subsequent oxidation behavior, seems to be a promising coating method to fulfill the required goals. According to the experiments that have been done in pure Al, the coatings were inhomogeneous and too thick. Additionally, a large number of cracks and porous band could be observed. In order to solve these problems, the element silicon was added to the aluminum melt with a nominal composition. The influence of silicon on the aluminizing and following oxidation process was investigated. With the addition of silicon into the aluminum melt, the coating became thinner and more homogeneous. The effort of the silicon on the oxidation behavior was observed as well concerning the suppression of porous band and cracks. (author)

  17. Preparation and adsorption characteristics for heavy metals of active silicon adsorbent from leaching residue of lead-zinc tailings.

    Science.gov (United States)

    Lei, Chang; Yan, Bo; Chen, Tao; Xiao, Xian-Ming

    2018-05-19

    To comprehensively reuse the leaching residue obtained from lead-zinc tailings, an active silicon adsorbent (ASA) was prepared from leaching residue and studied as an adsorbent for copper(II), lead(II), zinc(II), and cadmium(II) in this paper. The ASA was prepared by roasting the leaching residue with either a Na 2 CO 3 /residue ratio of 0.6:1 at 700 °C for 1 h or a CaCO 3 /residue ratio of 0.8:1 at 800 °C for 1 h. Under these conditions, the available SiO 2 content of the ASA was more than 20%. The adsorption behaviors of the metal ions onto the ASA were investigated and the Langmuir, Freundlich, and Dubinin-Radushkevich isotherm models were used to analyze the adsorption isotherm. The result showed that the maximum adsorption capacities of copper(II), lead(II), cadmium(II), and zinc(II) calculated by the Langmuir model were 3.40, 2.83, 0.66, and 0.62 mmol g -1 , respectively. The FT-IR spectra of the ASA and the mean free adsorption energies indicated that ion exchange was the mechanism of copper(II), lead(II), and cadmium(II) adsorption and that chemical reaction was the mechanism of zinc(II) adsorption. These results provide a method for reusing the leaching residue obtained from lead-zinc tailings and show that the ASA is an effective adsorbent for heavy metal pollution remediation.

  18. Comparison of Six Different Silicones In Vitro for Application as Glaucoma Drainage Device

    Directory of Open Access Journals (Sweden)

    Claudia Windhövel

    2018-02-01

    Full Text Available Silicones are widely used in medical applications. In ophthalmology, glaucoma drainage devices are utilized if conservative therapies are not applicable or have failed. Long-term success of these devices is limited by failure to control intraocular pressure due to fibrous encapsulation. Therefore, different medical approved silicones were tested in vitro for cell adhesion, cell proliferation and viability of human Sclera (hSF and human Tenon fibroblasts (hTF. The silicones were analysed also depending on the sample preparation according to the manufacturer’s instructions. The surface quality was characterized with environmental scanning electron microscope (ESEM and water contact angle measurements. All silicones showed homogeneous smooth and hydrophobic surfaces. Cell adhesion was significantly reduced on all silicones compared to the negative control. Proliferation index and cell viability were not influenced much. For development of a new glaucoma drainage device, the silicones Silbione LSR 4330 and Silbione LSR 4350, in this study, with low cell counts for hTF and low proliferation indices for hSF, and silicone Silastic MDX4-4210, with low cell counts for hSF and low proliferation indices for hTF, have shown the best results in vitro. Due to the high cell adhesion shown on Silicone LSR 40, 40,026, this material is unsuitable.

  19. Optimization of the Surface Structure on Black Silicon for Surface Passivation.

    Science.gov (United States)

    Jia, Xiaojie; Zhou, Chunlan; Wang, Wenjing

    2017-12-01

    Black silicon shows excellent anti-reflection and thus is extremely useful for photovoltaic applications. However, its high surface recombination velocity limits the efficiency of solar cells. In this paper, the effective minority carrier lifetime of black silicon is improved by optimizing metal-catalyzed chemical etching (MCCE) method, using an Al 2 O 3 thin film deposited by atomic layer deposition (ALD) as a passivation layer. Using the spray method to eliminate the impact on the rear side, single-side black silicon was obtained on n-type solar grade silicon wafers. Post-etch treatment with NH 4 OH/H 2 O 2 /H 2 O mixed solution not only smoothes the surface but also increases the effective minority lifetime from 161 μs of as-prepared wafer to 333 μs after cleaning. Moreover, adding illumination during the etching process results in an improvement in both the numerical value and the uniformity of the effective minority carrier lifetime.

  20. Preparation of sustained release matrix pellets by melt agglomeration in the fluidized bed: influence of formulation variables and modelling of agglomerate growth.

    Science.gov (United States)

    Pauli-Bruns, Anette; Knop, Klaus; Lippold, Bernhard C

    2010-03-01

    The one-step preparation of sustained release matrix pellets, using a melting procedure in a fluidized bed apparatus, was tested in a 2(3) full factorial design of experiments, using microcrystalline wax as lipophilic binder, theophylline as model drug and talc as additional matrix forming agent. The three influence parameters were (A) size of binder particles, (B) fraction of theophylline in solid particles and (C) fraction of microcrystalline wax in formulation. The response variables were agglomerate size and size distribution, dissolution time, agglomerate crush resistance, sphericity, yield and porosity. Nearly spherical pellets comprising a smooth, closed surface could be obtained with the used method, exhibiting the hollow core typical for the immersion and layering mechanism. The reproducibility was very good concerning all responses. The size of agglomerates is proportional to the size of the binder particles, which serve as cores for pellet formation in the molten state in the fluidized bed. Additionally, the agglomerate size is influenced by the volume of the solid particles in relation to the binder particles, with more solid particles leading to larger agglomerates and vice versa. Dissolution times vary in a very wide range, resulting from the interplay between amount of drug in relation to the meltable matrix substance microcrystalline wax and the non-meltable matrix substance talc. The change of binder particle size does not lead to a structural change of the matrix; both dissolution times and porosity are not significantly altered. Agglomerate crush resistance is low due to the hollow core of the pellets. However, it is significantly increased if the volume fraction of microcrystalline wax in the matrix is high, which means that the matrix is mechanically better stabilized. A theoretical model has been established to quantitatively explain agglomerate growth and very good accordance of the full particle size distributions between predicted and

  1. Reciprocal space analysis of the microstructure of luminescent and nonluminescent porous silicon films

    International Nuclear Information System (INIS)

    Lee, S.R.; Barbour, J.C.; Medernach, J.W.; Stevenson, J.O.; Custer, J.S.

    1994-01-01

    The microstructure of anodically prepared porous silicon films was determined using a novel X-ray diffraction technique. This technique uses double-crystal diffractometry combined with position-sensitive X- ray detection to efficiently and quantitatively image the reciprocal space structure of crystalline materials. Reciprocal space analysis of newly prepared, as well as aged, p - porous silicon films showed that these films exhibit a very broad range of crystallinity. This material appears to range in structure from a strained, single-crystal, sponge-like material exhibiting long-range coherency to isolated, dilated nanocrystals embedded in an amorphous matrix. Reciprocal space analysis of n + and p + porous silicon showed these materials are strained single-crystals with a spatially-correlated array of vertical pores. The vertical pores in these crystals may be surrounded by nanoporous or nanocrystalline domains as small as a few nm in size which produce diffuse diffraction indicating their presence. The photoluminescence of these films was examined using 488 nm Ar laser excitation in order to search for possible correlations between photoluminescent intensity and crystalline microstructure

  2. Trace elements determination in silicon and ferrosilicon reference materials by instrumental neutron activation analysis method

    International Nuclear Information System (INIS)

    Moreira, Edson Goncalves; Vasconcellos, Marina Beatriz Agostini; Saiki, Mitiko; Iamashita, Celia Omine

    2002-01-01

    The use of certified reference materials, CRM, is of uppermost importance in the rastreability realization of the measurement process. At times, CRM use is restricted by the non existence of a suitable CRM with similarity to the sample in respect to matrix composition or with element levels in different orders of magnitude. IPT Chemical Division launched a project to prepare a metallic silicon CRM, due to the requirements of the industries in this field. To characterize this new CRM, IPEN Nuclear Reactor Center is able to perform instrumental neutron activation analysis, INAA, a very suitable method for silicon matrix samples because they produce basically the short lived radionuclide 3 1 Si under thermal neutrons flux, which after radioactive decay, does not interfere in the determination of other elements. In this paper, it is presented the determination of As, Br, Co, Cr, K, Eu, Fe, La, Mn, Na Nb, Sb, Sm, Sc, Th, Tb, U, V, W and Yb in silicon CRM NBS SRM 57; ferrosilicon CRM IPT 56; IPT 70; NBS SRM 58a; NBS SRM 59a and silicon RM under preparation IPT 132. From the results, the accuracy and the precision of the process were assessed. (author)

  3. Development of a Process for a High Capacity Arc Heater Production of Silicon for Solar Arrays

    Science.gov (United States)

    Reed, W. H.

    1979-01-01

    A program was established to develop a high temperature silicon production process using existing electric arc heater technology. Silicon tetrachloride and a reductant (sodium) are injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction is expected to occur and proceed essentially to completion, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection were developed. Included in this report are: test system preparation; testing; injection techniques; kinetics; reaction demonstration; conclusions; and the project status.

  4. Preparation and biological evaluation of ethionamide-mesoporous silicon nanoparticles against Mycobacterium tuberculosis

    OpenAIRE

    Vale, Nuno; Correia, Alexandra; Silva, Sara; Figueiredo, Patrícia; Mäkilä, , Ermei; Salonen, Jarno; Hirvonen, Jouni; Pedrosa, Jorge; Santos Hélder A.; Fraga, Alexandra

    2017-01-01

    Ethionamide (ETH) is an important second-line antituberculosis drug used for the treatment of patients infected with multidrug-resistant Mycobacterium tuberculosis. Recently, we reported that the loading of ETH into thermally carbonized-porous silicon (TCPSi) nanoparticles enhanced the solubility and permeability of ETH at different pH-values and also increased its metabolization process. Based on these results, we synthesized carboxylic acid functionalized thermally hydrocarbonized porous si...

  5. Mucoadhesive Properties of Thiolated Pectin-Based Pellets Prepared by Extrusion-Spheronization Technique.

    Science.gov (United States)

    Martins, André Luiz Lopes; de Oliveira, Aline Carlos; do Nascimento, Carolina Machado Ozório Lopes; Silva, Luís Antônio Dantas; Gaeti, Marilisa Pedroso Nogueira; Lima, Eliana Martins; Taveira, Stephânia Fleury; Fernandes, Kátia Flávia; Marreto, Ricardo Neves

    2017-05-01

    The aim of this study was to develop mucoadhesive pellets on a thiolated pectin base using the extrusion-spheronization technique. Thiolation of pectin was performed by esterification with thioglycolic acid. The molecular weight and thiol group content of the pectins were determined. Pellets containing pectin, microcrystalline cellulose, and ketoprofen were prepared and their mucoadhesive properties were evaluated through a wash-off test using porcine intestinal mucosa. The in vitro ketoprofen release was also evaluated. Thiolated pectin presented a thiol group content of 0.69 mmol/g. Thiolation caused a 13% increase in polymer molecular weight. Pellets containing thiolated pectin were still adhering to the intestinal mucosa after 480 min and showed a more gradual release of ketoprofen. Conversely, pellets prepared with nonthiolated pectin showed rapid disintegration and detached after only 15 min. It can be concluded that thiolated pectin-based pellets can be considered a potential platform for the development of mucoadhesive drug delivery systems for the oral route. Copyright © 2017 American Pharmacists Association®. Published by Elsevier Inc. All rights reserved.

  6. Preparation and physical properties of tara gum film reinforced with cellulose nanocrystals.

    Science.gov (United States)

    Ma, Qianyun; Hu, Dongying; Wang, Lijuan

    2016-05-01

    Cellulose nanocrystals (CNC) prepared from microcrystalline cellulose were blended in tara gum solution to prepare nanocomposite films. The morphology, crystallinity, and thermal properties of the CNC and films were evaluated by using transmission electron microscopy, X-ray diffractometry, and thermogravimetric analysis, respectively. The resultant CNC was rod-shaped with diameters of around 8.6 nm. The effect of CNC content on physical and thermal properties of films was studied. The composite film tensile strength increased from 27.86 to 65.73 MPa, elastic modulus increased from 160.98 MPa to 882.49 MPa and the contact angle increased from 55.8° to 98.7° with increasing CNC content from 0 to 6 wt%. However, CNC addition increased the thermal stability slightly and CNC content above 6 wt% decreased the tensile strength by CNC aggregation in the matrix. The nanocomposite film containing 6 wt% CNC possessed the highest light transmittance, mechanical properties, and lowest oxygen permeability. CNC addition is a suitable method to modify tara gum matrix polymer properties. Copyright © 2016 Elsevier B.V. All rights reserved.

  7. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    Directory of Open Access Journals (Sweden)

    Zahra Ostadmahmoodi Do

    2016-06-01

    Full Text Available Nanowires (NWs are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW, is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method for producing nanowires of the same substrate material. The process conditions are adjusted to find the best quality of Si NWs. Morphology of Si NWs is studied using a field emission scanning electron microscopic technique. An energy dispersive X-Ray analyzer is also used to provide elemental identification and quantitative compositional information. Subsequently, Schottky type solar cell samples are fabricated on Si and Si NWs using ITO and Ag contacts. The junction properties are calculated using I-V curves in dark condition and the solar cell I-V characteristics are obtained under incident of the standardized light of AM1.5. The results for the two mentioned Schottky solar cell samples are compared and discussed. An improvement in short circuit current and efficiency of Schottky solar cell is found when Si nanowires are employed.

  8. Detection of Human Ig G Using Photoluminescent Porous Silicon Interferometer.

    Science.gov (United States)

    Cho, Bomin; Kim, Seongwoong; Woo, Hee-Gweon; Kim, Sungsoo; Sohn, Honglae

    2015-02-01

    Photoluminescent porous silicon (PSi) interferometers having dual optical properties, both Fabry-Pérot fringe and photolumincence (PL), have been developed and used as biosensors for detection of Human Immunoglobin G (Ig G). PSi samples were prepared by electrochemical etching of p-type silicon under white light exposure. The surface of PSi was characterized using a cold field emission scanning electron microscope. The sensor system studied consisted of a single layer of porous silicon modified with Protein A. The system was probed with various fragments of aqueous human immunoglobin G (Ig G) analyte. Both reflectivity and PL were simultaneously measured under the exposure of human Ig G. An increase of optical thickness and decrease of PL were obtained under the exposure of human Ig G. Detection limit of 500 fM was observed for the human Ig G.

  9. Structural and photoluminescence investigation on the hot-wire assisted plasma enhanced chemical vapor deposition growth silicon nanowires

    International Nuclear Information System (INIS)

    Chong, Su Kong; Goh, Boon Tong; Wong, Yuen-Yee; Nguyen, Hong-Quan; Do, Hien; Ahmad, Ishaq; Aspanut, Zarina; Muhamad, Muhamad Rasat; Dee, Chang Fu; Rahman, Saadah Abdul

    2012-01-01

    High density of silicon nanowires (SiNWs) were synthesized by a hot-wire assisted plasma enhanced chemical vapor deposition technique. The structural and optical properties of the as-grown SiNWs prepared at different rf power of 40 and 80 W were analyzed in this study. The SiNWs prepared at rf power of 40 W exhibited highly crystalline structure with a high crystal volume fraction, X C of ∼82% and are surrounded by a thin layer of SiO x . The NWs show high absorption in the high energy region (E>1.8 eV) and strong photoluminescence at 1.73 to 2.05 eV (red–orange region) with a weak shoulder at 1.65 to 1.73 eV (near IR region). An increase in rf power to 80 W reduced the X C to ∼65% and led to the formation of nanocrystalline Si structures with a crystallite size of <4 nm within the SiNWs. These NWs are covered by a mixture of uncatalyzed amorphous Si layer. The SiNWs prepared at 80 W exhibited a high optical absorption ability above 99% in the broadband range between 220 and ∼1500 nm and red emission between 1.65 and 1.95 eV. The interesting light absorption and photoluminescence properties from both SiNWs are discussed in the text. - Highlights: ► Growth of random oriented silicon nanowires using hot-wire assisted plasma enhanced chemical vapor deposition. ► Increase in rf power reduces the crystallinity of silicon nanowires. ► High density and nanocrystalline structure in silicon nanowires significant enhance the near IR light absorption. ► Oxide defects and silicon nanocrystallites in silicon nanowires reveal photoluminescence in red–orange and red regions.

  10. A Brillouin scattering study of the effect of chemical passivation on the elastic properties of porous silicon

    Science.gov (United States)

    Fan, H. J.; Kuok, M. H.; Ng, S. C.; Boukherroub, R.; Lockwood, D. J.

    2002-07-01

    Brillouin scattering has been performed to probe acoustic waves in porous silicon films that have been chemically modified with either 1-decene, decyl aldehyde, undecylenic acid, or ethyl undecylenate. The shift in the frequencies of acoustic modes in the passivated porous silicon samples, relative to those in freshly prepared porous silicon, is different for different chemical modifiers. The magnitude of the frequency shift is qualitatively correlated with the change, caused by the passivation, in the average densities and elastic constants of the samples.

  11. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    Science.gov (United States)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  12. Quality assurance of double-sided silicon microstrip sensors for the silicon tracking system in the CBM experiment at FAIR

    Energy Technology Data Exchange (ETDEWEB)

    Larionov, Pavel [Goethe Universitaet, Frankfurt (Germany); Collaboration: CBM-Collaboration

    2015-07-01

    The Silicon Tracking System (STS) is the core tracking detector of the CBM experiment at FAIR. The system's task is to reconstruct the trajectories of the charged particles produced in the beam-target interactions, provide their momentum determination, and enable the detection of decay topologies. The STS will comprise 1220 double-sided silicon microstrip sensors. After production each sensor will go through a number of Quality Assurance procedures to verify their validity for performance in the STS and also to confirm the manufacturer's data. In this talk, results of the quality assurance procedures that are being applied to the latest STS prototype sensors, including detailed tests of the quality of each single strip, long-term stability and preparations for volume tests during series production, are presented.

  13. Future application of Czochralski crystal pulling for silicon

    Science.gov (United States)

    Matlcok, J. H.

    1985-08-01

    Czochralski (Cz) crystal pulling has been the predominant method used for preparing silicon single crystal for the past twenty years. The fundamental technology used has changed little. However, great strides have been made in learning how to make the crystals bigger and of better quality at ever increasing productivity rates. Currently charge sizes of 50 kg of polycrystal silicon are being used for production and crystals up to ten inches in diameter have been grown without major difficulty. The largest material actually being processed in silicon wafer form is 150 mm (6 inches) in diameter. Growing of crystals in a magnetic field has proved to be particularly useful for microscopic impurity control. Major developments in past years on equipment for Cz crystal pulling have included the automatic growth control of the diameter as well as the starting core of the crystal, the use of magnetic fields and around the crystal puller to supress convection, various recharging schemes for dopant control and the use of continuous liquid feed in the crystal puller. The latter, while far from being a reliable production process, is ideal in concept for major improvement in Cz crystal pulling. The Czochralski process will maintain its dominance of silicon crystal production for many years.

  14. Preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyeon-Hye [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of); Nano& Advanced Materials Engineering, Jeonju University, Jeonju 560-759 (Korea, Republic of); Han, Woong [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of); Lee, Hae-seong [Nano& Advanced Materials Engineering, Jeonju University, Jeonju 560-759 (Korea, Republic of); Min, Byung-Gak [Department of Polymer Science & Engineering, Korea National University of Transportation, Chungju 380-702 (Korea, Republic of); Kim, Byung-Joo, E-mail: ap2-kbj@hanmail.net [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of)

    2015-10-15

    Graphical abstract: We report preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites. Thermally composites showed enhanced thermal conductivity increasing from up to 59% by the thermal network. - Highlights: • A new method of Si−N coating on carbon fibers was reported. • Silane layer were successfully converted to Si−N layer on carbon fiber surface. • Si−N formation was confirmed by FT-IR, XPS, and EDX. • Thermal conductivity of Si−N coated CF composites were enhanced to 0.59 W/mK. - Abstract: This study investigates the effect of silicon nitride (Si−N)-coated carbon fibers on the thermal conductivity of carbon-fiber-reinforced epoxy composite. The surface properties of the Si−N-coated carbon fibers (SiNCFs) were observe using Fourier transform infrared spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy, and the thermal stability was analyzed using thermogravimetric analysis. SiNCFs were fabricated through the wet thermal treatment of carbon fibers (Step 1: silane finishing of the carbon fibers; Step 2: high-temperature thermal treatment in a N{sub 2}/NH{sub 3} environment). As a result, the Si−N belt was exhibited by SEM. The average thickness of the belt were 450–500 nm. The composition of Si−N was the mixture of Si−N, Si−O, and C−Si−N as confirmed by XPS. Thermal residue of the SiNCFs in air was enhanced from 3% to 50%. Thermal conductivity of the composites increased from 0.35 to 0.59 W/mK after Si−N coating on carbon surfaces.

  15. Wear resistance of nano- and micro-crystalline diamond coatings onto WC-Co with Cr/CrN interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Polini, Riccardo [Dipartimento di Scienze e Tecnologie Chimiche, Universita di Roma Tor Vergata, Via della Ricerca Scientifica, 1, Rome, 00133 (Italy); Barletta, Massimiliano, E-mail: barletta@ing.uniroma2.i [Dipartimento di Ingegneria Meccanica, Universita di Roma Tor Vergata, Via del Politecnico, 1, Rome, 00133 (Italy); Cristofanilli, Giacomo [Dipartimento di Scienze e Tecnologie Chimiche, Universita di Roma Tor Vergata, Via della Ricerca Scientifica, 1, Rome, 00133 (Italy)

    2010-12-30

    Cr/CrN bi-layers have been used recently to promote the growth of high quality Hot Filament Chemical Vapour Deposition (HFCVD) diamond coatings onto Co-cemented tungsten carbide (WC-6 wt.%Co) substrates. In the present investigation, the influence of the crystalline size of the diamond coatings on their wear endurance is looked into. Nano- (NDC) and micro-crystalline Diamond Coatings (MDC) were deposited by HFCVD onto untreated and Fluidized Bed (FB) treated Cr/CrN interlayers. NDCs, characterized by a cauliflower-like morphology, showed improved wear resistance. However, the superimposition of NDCs onto Cr/CrN interlayers micro-corrugated by FB treatment was found to be the most promising choice, leading to the formation of highly adherent and wear resistant coatings.

  16. An in Vitro Experimental Study on the Antimicrobial Activity of Silicone Oil against Anaerobic Bacteria.

    Science.gov (United States)

    Arici, Ceyhun; Aras, Cengiz; Tokman, Hrisi Bahar; Torun, Muzeyyen Mamal

    2016-01-01

    To investigate the in vitro antimicrobial activity of silicone oil against anaerobic agents, specifically Propionibacterium acnes, Peptostreptococcus spp., Peptostreptococcus anaerobius, Bacteroides fragilis, Fuobacterium spp., and Clostridium tertium. A 0.5 McFarland turbidity of Propionibacterium acnes, Peptostreptococcus spp., Peptostreptococcus anaerobius, Bacteroides fragilis, Fuobacterium spp., and Clostridium tertium was prepared, and 0.1 mL was inoculated into 0.9 mL of silicone oil. Control inoculations were performed in anaerobic blood agar and fluid thioglycollate medium without silicone oil. Propionibacterium acnes retained their viability on the 3rd day in the presence of silicone oil. In total, 9.7 × 10(6) colonies were enumerated from 1 mL of silicone oil. After a prolonged incubation of 7 days, the number of colonies observed was 9.2 × 10(6). The other bacteria disappeared after the 3rd day of incubation in silicone oil. Propionibacterium acnes, which is the most common chronic postoperative endophthalmitis agent, is thought to be resistant to silicone oil.

  17. Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

    International Nuclear Information System (INIS)

    Tsukamoto, K.; Akasaka, Y.; Horie, K.

    1977-01-01

    Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

  18. Porous silicon: silicon quantum dots for photonic applications

    International Nuclear Information System (INIS)

    Pavesi, L.; Guardini, R.

    1996-01-01

    Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

  19. Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

    Science.gov (United States)

    Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

    2016-12-28

    The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

  20. Fabrication and characterization of contact layers in amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Kolter, M.

    1993-04-01

    The production and characterisation of amorphous and microcrystalline n-doped layers (a-Si:H(n) and c-Si:H(n)) for thin film solar cells is described together contact investigations. The layers were produced in a plasma CVD. The electric conductivity was measured