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Sample records for microcrystalline silicon prepared

  1. Microcrystalline silicon prepared at magnetic field modified nucleation

    Kočka, Jan; Mates, Tomáš; Ledinský, Martin; Stuchlíková, The-Ha; Stuchlík, Jiří; Fejfar, Antonín

    2006-01-01

    Roč. 352, - (2006), s. 901-905 ISSN 0022-3093 R&D Projects: GA MŽP(CZ) SM/300/1/03; GA MŽP(CZ) SN/3/172/05; GA AV ČR(CZ) IAA1010316; GA AV ČR(CZ) IAA1010413; GA MŠk(CZ) LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : amorphous semiconductors * nucleation * electrical and electronic properties * chemical vapor deposition * atomic force and scanning tunneling microscopy * microcrystallinity * optical properties Subject RIV: BM - Solid Matter Physics ; Magnet ism Impact factor: 1.362, year: 2006

  2. Preparation and Characterisation of Amorphous-silicon Photovoltaic Devices Having Microcrystalline Emitters

    Gutierrez, M. T.; Gandia, J. J.; Carabe, J.

    1999-01-01

    The present work summarises the essential aspects of the research carried out so far at CIEMAT on amorphous-silicon solar cells. The experience accumulated on the preparation and characterisation of amorphous and microcrystalline silicon has allowed to start from intrinsic (absorbent) and p- and n-type (emitters) materials not only having excellent optoelectronic properties, but enjoying certain technological advantages with respect to those developed by other groups. Among these are absorbent-layer growth rates between 5 and 10 times as fast as conventional ones and microcrystalline emitters prepared without using hydrogen. The preparation of amorphous-silicon cells has required the solution of a number of problems, such as those related to pinholes, edge leak currents and diffusion of metals into the semiconductor. Once such constraints have been overcome, it has been demonstrated not only that the amorphous-silicon technology developed at CIEMAT is valid for making solar cells, but also that the quality of the semiconductor material is good for the application according to the partial results obtained. The development of thin-film laser-scribing technology is considered essential. Additionally it has been concluded that cross contamination, originated by the fact of using a single-chamber reactor, is the basic factor limiting the quality of the cells developed at CIEMAT. The present research activity is highly focused on the solution of this problem. (Author)23 refs

  3. Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells

    Finger, F.; Astakhov, O.; Bronger, T.; Carius, R.; Chen, T.; Dasgupta, A.; Gordijn, A.; Houben, L.; Huang, Y.; Klein, S.; Luysberg, M.; Wang, H.; Xiao, L.

    2009-01-01

    Crystalline silicon carbide alloys have a very high potential as transparent conductive window layers in thin-film solar cells provided they can be prepared in thin-film form and at compatible deposition temperatures. The low-temperature deposition of such material in microcrystalline form (μc-Si:C:H) was realized by use of monomethylsilane precursor gas diluted in hydrogen with the Hot-Wire Chemical Vapor Deposition process. A wide range of deposition parameters has been investigated and the structural, electronic and optical properties of the μc-SiC:H thin films have been studied. The material, which is strongly n-type from unintentional doping, has been used as window layer in n-side illuminated microcrystalline silicon solar cells. High short-circuit current densities are obtained due to the high transparency of the material resulting in a maximum solar cell conversion efficiency of 9.2%.

  4. Preparation and Characterisation of Amorphous-silicon Photovoltaic Devices Having Microcrystalline Emitters; Preparacion y Caracterizacion de Dispositivos Fotovoltaicos de Silicio Amorfo con Emisiones Microcristalinos

    Gutierrez, M. T.; Gandia, J. J.; Carabe, J. [CIEMAT. Madrid (Spain)

    1999-11-01

    The present work summarises the essential aspects of the research carried out so far at CIEMAT on amorphous-silicon solar cells. The experience accumulated on the preparation and characterisation of amorphous and microcrystalline silicon has allowed to start from intrinsic (absorbent) and p-and n-type (emitters) materials not only having excellent optoelectronic properties, but enjoying certain technological advantages with respect to those developed by other groups. Among these are absorbent-layer growth rates between 5 and 10 times as fast as conventional ones and microcrystalline emitters prepared without using hydrogen. The preparation of amorphous-silicon cells has required the solution of a number of problems, such as those related to pinholes, edge leak currents and diffusion of metals into the semiconductor. Once such constraints have been overcome, it has been demonstrated not only that the amorphous-silicon technology developed at CIEMAT is valid for making solar cells, but also that the quality of the semiconductor material is good for the application according to the partial results obtained. The development of thin-film laser-scribing technology is considered essential. Additionally it has been concluded that cross contamination, originated by the fact of using a single-chamber reactor, is the basic factor limiting the quality of the cells developed at CIEMAT. The present research activity is highly focused on the solution of this problem. (Author)

  5. Plasma processing of microcrystalline silicon films : filling in the gaps

    Bronneberg, A.C.

    2012-01-01

    Hydrogenated microcrystalline silicon (µc-Si:H) is a mixed-phase material consisting of crystalline silicon grains, hydrogenated amorphous silicon (a-Si:H) tissue, and voids. Microcrystalline silicon is extensively used as absorber layer in thin-film tandem solar cells, combining the advantages of a

  6. Development of Doped Microcrystalline Silicon Oxide and its Application to Thin‑Film Silicon Solar Cells

    Lambertz, A.

    2015-01-01

    The aim of the present study is the development of doped microcrystalline silicon oxide (µc‑SiOx:H) alloys and its application in thin‑film silicon solar cells. The doped µc‑SiOx:H material was prepared from carbon dioxide (CO2), silane (SiH4), hydrogen (H2) gas mixtures using plasma enhanced

  7. Carrier mobilities in microcrystalline silicon films

    Bronger, T.; Carius, R.

    2007-01-01

    For a better understanding of electronic transport mechanisms in thin-film silicon solar cell quality films, we have investigated the Hall mobility for electrons in microcrystalline/amorphous silicon over a range of crystallinities and doping concentrations. We find that Hall mobility increases with increasing doping concentration in accordance with earlier measurements. With increasing amorphous fraction, the measured mobility decreases suggesting a negative influence of the additional disorder. The results suggest a differential mobility model in which mobility depends on the energy level of the carriers that contribute to the electrical current

  8. Sub-bandgap optical absorption spectroscopy of hydrogenated microcrystalline silicon thin films prepared using hot-wire CVD (Cat-CVD) process

    Goktas, O.; Isik, N.; Okur, S.; Gunes, M.; Carius, R.; Klomfass, J.; Finger, F.

    2006-01-01

    Hydrogenated microcrystalline silicon (μc-Si:H) thin films with different silane concentration (SC) have been prepared using the HW-CVD technique. Dual beam photoconductivity (DBP), photothermal deflection spectroscopy (PDS), and transmission measurements have been used to investigate the optical properties of the μc-Si:H films. Two different sub-bandgap absorption, α(hν), methods have been applied and analyzed to obtain a better insight into the electronic states involved. A good agreement has been obtained in the absorption spectrum obtained from the PDS and DBP measurements at energies above the bandgap. Differences between PDS and DBP spectra exist below the bandgap energy where DBP spectra always give lower α(hν) values and show a dependence on the SC. For some films, differences exist in the α(hν) spectra when the DBP measurements are carried out through the film and substrate side. In addition, for some films, there remains fringe pattern left on the spectrum after the calculation of the fringe-free absorption spectrum, which indicates structural inhomogeneities present throughout the film

  9. LiF enhanced nucleation of the low temperature microcrystalline silicon prepared by plasma enhanced chemical vapour deposition

    Stuchlík, Jiří; Ledinský, Martin; Honda, Shinya; Drbohlav, Ivo; Mates, Tomáš; Fejfar, Antonín; Hruška, Karel; Stuchlíková, The-Ha; Kočka, Jan

    2009-01-01

    Roč. 517, č. 24 (2009), s. 6829-6832 ISSN 0040-6090 R&D Projects: GA AV ČR KAN400100701; GA ČR(CZ) GD202/05/H003; GA MŠk LC510; GA AV ČR IAA1010413 Institutional research plan: CEZ:AV0Z10100521 Keywords : amorphous hydrogenated silicon * atomic force microscopy * plasma-enhanced chemical vapour deposition, * nucleation * Raman scattering * lithium fluoride Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.727, year: 2009

  10. The atomic hydrogen flux during microcrystalline silicon solar cell deposition

    Sanden, van de M.C.M.; Dingemans, G.; van den Donker, M.N.; Hrunski, D.; Gordijn, A.; Kessels, W.M.M.

    2009-01-01

    Etch product detection by in situ optical emission spectroscopy is used to detect the phase transition from amorphous to microcrystalline silicon. In this contribution it is demonstrated that a calibrated version of this technique can be used to determine the absolute hydrogen flux under

  11. Relationship between defect density and charge carrier transport in amorphous and microcrystalline silicon

    Astakhov, Oleksandr; Carius, Reinhard; Finger, Friedhelm; Petrusenko, Yuri; Borysenko, Valery; Barankov, Dmytro

    2009-01-01

    The influence of dangling-bond defects and the position of the Fermi level on the charge carrier transport properties in undoped and phosphorous doped thin-film silicon with structure compositions all the way from highly crystalline to amorphous is investigated. The dangling-bond density is varied reproducibly over several orders of magnitude by electron bombardment and subsequent annealing. The defects are investigated by electron-spin-resonance and photoconductivity spectroscopies. Comparing intrinsic amorphous and microcrystalline silicon, it is found that the relationship between defect density and photoconductivity is different in both undoped materials, while a similar strong influence of the position of the Fermi level on photoconductivity via the charge carrier lifetime is found in the doped materials. The latter allows a quantitative determination of the value of the transport gap energy in microcrystalline silicon. The photoconductivity in intrinsic microcrystalline silicon is, on one hand, considerably less affected by the bombardment but, on the other hand, does not generally recover with annealing of the defects and is independent from the spin density which itself can be annealed back to the as-deposited level. For amorphous silicon and material prepared close to the crystalline growth regime, the results for nonequilibrium transport fit perfectly to a recombination model based on direct capture into neutral dangling bonds over a wide range of defect densities. For the heterogeneous microcrystalline silicon, this model fails completely. The application of photoconductivity spectroscopy in the constant photocurrent mode (CPM) is explored for the entire structure composition range over a wide variation in defect densities. For amorphous silicon previously reported linear correlation between the spin density and the subgap absorption is confirmed for defect densities below 10 18 cm -3 . Beyond this defect level, a sublinear relation is found i.e., not

  12. Defect states in microcrystalline silicon probed by photoluminescence spectroscopy

    Merdzhanova, T.; Carius, R.; Klein, S.; Finger, F.; Dimova-Malinovska, D.

    2006-01-01

    Photoluminescence (PL) spectroscopy is used to investigate defects and localized band tail states within the band gap of hydrogenated microcrystalline silicon (μc-Si:H) prepared by plasma enhanced chemical vapor deposition (PECVD) and hot wire chemical vapor deposition (HWCVD). The effect of the substrate temperature (T S ), which influences mainly the defect density, and silane concentration (SC), as Key parameter to control the microstructure of the material were varied. In high quality μc-Si:H films (T S = 185-200 deg. C) a PL band ('μc'-Si-band) is observed at ∼ 0.9-1.05 eV which is attributed to radiative recombination via localized band tail states in the microcrystalline phase. In μc-Si:H films prepared at higher T S (> 300 deg. C), an additional PL band at ∼ 0.7 eV with a width of ∼ 0.17 eV is found for both PECVD and HWCVD material. This band maintains its position at ∼ 0.7 eV with increasing SC in contrast to the observed shift of the 'μc'-Si-band to higher energies. Studies of the temperature dependences of the PL peak energy and intensity for the two bands show: (i) the PL band at 0.7 eV remains unaffected upon increasing temperature, while the 'μc'-Si-band shifts to lower energies (ii) a much weaker quenching for the 0.7 eV band compared to the 'μc'-Si-band. It was also found that the PL band at 0.7 eV exhibits a slightly stronger temperature dependence of the PL intensity compared to 'defect' band at 0.9 eV in a-Si:H suggesting similar recombination transition via deeper trap states. Due to a similar PL properties of the emission band previously observed in Czochralski-grown silicon (Cz-Si), the 0.7 eV band in μc-Si:H is assigned tentatively to defect-related transitions in the crystalline phase

  13. Patterning of hydrogenated microcrystalline silicon growth by magnetic field

    Fejfar, Antonín; Stuchlík, Jiří; Mates, Tomáš; Ledinský, Martin; Honda, Shinya; Kočka, Jan

    2005-01-01

    Roč. 87, č. 1 (2005), 011901/1-011901/3 ISSN 0003-6951 R&D Projects: GA AV ČR(CZ) IAA1010316; GA AV ČR(CZ) IAA1010413; GA ČR(CZ) GD202/05/H003 Institutional research plan: CEZ:AV0Z10100521 Keywords : hydrogenated microcrystalline silicon * magnetic field growth Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.127, year: 2005

  14. Simulation of the growth dynamics of amorphous and microcrystalline silicon

    Bailat, Julien; Vallat-Sauvain, Evelyne; Vallat, A.; Shah, Arvind

    2008-01-01

    The qualitative description of the major microstructure characteristics of microcrystalline silicon is achieved through a three-dimensional discrete dynamical growth model. The model is based on three fundamental processes that determine surface morphology: (1) random deposition of particles, (2) local relaxation and (3) desorption. In this model, the incoming particle reaching the growing surface takes on a state variable representing a particular way of being incorporated into the material....

  15. Post-deposition thermal annealing studies of hydrogenated microcrystalline silicon deposited at 40 deg. C

    Bronsveld, P.C.P.; Wagt, H.J. van der; Rath, J.K.; Schropp, R.E.I.; Beyer, W.

    2007-01-01

    Post-deposition thermal annealing studies, including gas effusion measurements, measurements of infrared absorption versus annealing state, cross-sectional transmission electron microscopy (X-TEM) and atomic force microscopy (AFM), are used for structural characterization of hydrogenated amorphous and microcrystalline silicon films, prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at low substrate temperature (T S ). Such films are of interest for application in thin semiconductor devices deposited on cheap plastics. For T S ∼ 40 deg. C, H-evolution shows rather complicated spectra for (near-) microcrystalline material, with hydrogen effusion maxima seen at ∼ 200-250 deg. C, 380 deg. C and ∼ 450-500 deg. C, while for the amorphous material typical spectra for good-quality dense material are found. Effusion experiments of implanted He demonstrate for the microcrystalline material the presence of a rather open (void-rich) structure. A similar tendency can be concluded from Ne effusion experiments. Fourier Transform infrared (FTIR) spectra of stepwise annealed samples show Si-H bond rupture already at annealing temperatures of 150 deg. C. Combined AFM/X-TEM studies reveal a columnar microstructure for all of these (near-) microcrystalline materials, of which the open structure is the most probable explanation of the shift of the H-effusion maximum in (near-) microcrystalline material to lower temperature

  16. Influence of ion bombardment on microcrystalline silicon material quality and solar cell performances

    Bugnon, G; Feltrin, A; Sculati-Meillaud, F; Bailat, J; Ballif, C

    2008-01-01

    Microcrystalline hydrogenated silicon growth with VHF-PECVD was examined in an industrial type parallel plate KAITM reactor. The influence of pressure on material quality was studied in single junction solar cells. Solar cells with their intrinsic layer prepared at higher pressures exhibit remarkable improvements, reaching 8.2% efficiency at 3.5 mbar. Further analyzes showed that μc- Si:H intrinsic layers grown at higher pressures have a significantly lower defect density. These results are a...

  17. Microcrystalline silicon films and solar cells investigatet by photoluminescence spectroscopy

    Merdzhanova, T.

    2005-07-01

    A systematic investigation on photoluminescence (PL) properties of microcrystalline silicon ({mu}c-Si:H) films with structural composition changing from highly crystalline to predominantly amorphous is presented. The samples were prepared by PECVD and HWCVD with different silane concentration in hydrogen (SC). By using photoluminescence in combination with Raman spectroscopy the relationship between electronic properties and the microstructure of the material is studied. The PL spectra of {mu}c-Si:H reveal a rather broad ({proportional_to}0.13 eV) featureless band at about 1 eV ('{mu}c'-Si-band). In mixed phase material of crystalline and amorphous regions, a band at about 1.3 eV with halfwidth of about 0.3 eV is found in addition to '{mu}c'-Si-band, which is attributed to the amorphous phase ('a'-Si-band). Similarly to amorphous silicon, the '{mu}c'-Si-band is assigned to recombination between electrons and holes in band tail states. An additional PL band centred at about 0.7 eV with halfwidth slightly broader than the '{mu}c'-Si-band is observed only for films prepared at high substrate temperature and it is preliminarily assigned to defect-related transitions as in polycrystalline silicon. With decreasing crystalline volume fraction, the '{mu}c'-Si-band shifts continuously to higher energies for all {mu}c-Si:H films but the linewidth of the PL spectra is almost unaffected. This is valid for all deposition conditions investigated. The results are interpreted, assuming decrease of the density of band tail states with decreasing crystalline volume fraction. A simple model is proposed to simulate PL spectra and V{sub oc} in {mu}c-Si:H solar cells as a function of temperature, based on carrier distributions in quasi-equilibrium conditions. In the model is assumed symmetric density of states distributions for electrons and holes in the conduction and the valence band tail states. The best agreement between

  18. Microcrystalline silicon, grain boundaries and role of oxygen

    Kočka, Jan; Stuchlíková, The-Ha; Ledinský, Martin; Stuchlík, Jiří; Mates, Tomáš; Fejfar, Antonín

    2009-01-01

    Roč. 93, č. 8 (2009), s. 1444-1447 ISSN 0927-0248 R&D Projects: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA ČR(CZ) GD202/05/H003; GA MŠk LC510; GA AV ČR IAA1010413 Institutional research plan: CEZ:AV0Z10100521 Keywords : microcrystalline silicon * grain boundaries * electronic transport * hydrogen * oxygen Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.858, year: 2009

  19. Optical and electronic properties of microcrystalline silicon as a function of microcrystallinity

    Han, Daxing; Yue, Guozhen; Lorentzen, J. D.; Lin, Jing; Habuchi, H.; Wang, Qi

    2000-01-01

    Films were prepared by hot wire chemical vapor deposition at ∼240 degree sign C with varied hydrogen dilution ratios R=H 2 :SiH 4 from 1 to 20. The optical and electronic properties as a function of microcrystallinity were studied. We found: (a) At low H dilution R≤2, there is no measurable crystallinity by Raman spectroscopy and x-ray diffraction in the a-Si:H matrix, but an optical absorption peak at ∼1.25 eV appears; when R=2, the film shows the lowest subgap absorption, the highest photosensitivity, and the largest optical gap. (b) When R≥3, the c-Si phase is measurable by Raman and a low-energy photoluminescence (PL) band (0.84-1.0 eV) appears in addition to the high-energy band (1.3-1.4 eV). Meanwhile, all the absorption spectra show a featureless line shape. (c) An energy redshift is observed for both PL peaks as the film grows thicker. Finally, (d) the conductivity activation energy first decreases from 0.68 to 0.12 eV, then increases with increasing microcrystallinity. A mode of two sets of energy bands of electronic states for these two-phase materials is suggested. (c) 2000 American Institute of Physics

  20. Solution growth of microcrystalline silicon on amorphous substrates

    Heimburger, Robert

    2010-07-05

    This work deals with low-temperature solution growth of micro-crystalline silicon on glass. The task is motivated by the application in low-cost solar cells. As glass is an amorphous material, conventional epitaxy is not applicable. Therefore, growth is conducted in a two-step process. The first step aims at the spatial arrangement of silicon seed crystals on conductive coated glass substrates, which is realized by means of vapor-liquid-solid processing using indium as the solvent. Seed crystals are afterwards enlarged by applying a specially developed steady-state solution growth apparatus. This laboratory prototype mainly consists of a vertical stack of a silicon feeding source and the solvent (indium). The growth substrate can be dipped into the solution from the top. The system can be heated to a temperature below the softening point of the utilized glass substrate. A temperature gradient between feeding source and growth substrate promotes both, supersaturation and material transport by solvent convection. This setup offers advantages over conventional liquid phase epitaxy at low temperatures in terms of achievable layer thickness and required growth times. The need for convective solute transport to gain the desired thickness of at least 50 {mu}m is emphasized by equilibrium calculations in the binary system indium-silicon. Material transport and supersaturation conditions inside the utilized solution growth crucible are analyzed. It results that the solute can be transported from the lower feeding source to the growth substrate by applying an appropriate heating regime. These findings are interpreted by means of a hydrodynamic analysis of fluid flow and supporting FEM simulation. To ensure thermodynamic stability of all materials involved during steady-state solution growth, the ternary phase equilibrium between molybdenum, indium and silicon at 600 C was considered. Based on the obtained results, the use of molybdenum disilicide as conductive coating

  1. Effect of silane/hydrogen ratio on microcrystalline silicon thin films by remote inductively coupled plasma

    Guo, Y. N.; Wei, D. Y.; Xiao, S. Q.; Huang, S. Y.; Zhou, H. P.; Xu, S.

    2013-05-01

    Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by remote low frequency inductively coupled plasma (ICP) chemical vapor deposition system, and the effect of silane/hydrogen ratio on the microstructure and electrical properties of μc-Si:H films was systematically investigated. As silane/hydrogen ratio increases, the crystalline volume fraction Fc decreases and the ratio of the intensity of (220) peak to that of (111) peak drops as silane flow rate is increased. The FTIR result indicates that the μc-Si:H films prepared by remote ICP have a high optical response with a low hydrogen content, which is in favor of reducing light-induced degradation effect. Furthermore, the processing window of the phase transition region for remote ICP is much wider than that for typical ICP. The photosensitivity of μc-Si:H films can exceed 100 at the transition region and this ensures the possibility of the fabrication of microcrystalline silicon thin film solar cells with a open-circuit voltage of about 700 mV.

  2. Process control of high rate microcrystalline silicon based solar cell deposition by optical emission spectroscopy

    Kilper, T.; Donker, M.N. van den; Carius, R.; Rech, B.; Braeuer, G.; Repmann, T.

    2008-01-01

    Silicon thin-film solar cells based on microcrystalline silicon (μc-Si:H) were prepared in a 30 x 30 cm 2 plasma-enhanced chemical vapor deposition reactor using 13.56 or 40.68 MHz plasma excitation frequency. Plasma emission was recorded by optical emission spectroscopy during μc-Si:H absorber layer deposition at deposition rates between 0.5 and 2.5 nm/s. The time course of SiH * and H β emission indicated strong drifts in the process conditions particularly at low total gas flows. By actively controlling the SiH 4 gas flow, the observed process drifts were successfully suppressed resulting in a more homogeneous i-layer crystallinity along the growth direction. In a deposition regime with efficient usage of the process gas, the μc-Si:H solar cell efficiency was enhanced from 7.9 % up to 8.8 % by applying process control

  3. Microcrystalline silicon deposition: Process stability and process control

    Donker, M.N. van den; Kilper, T.; Grunsky, D.; Rech, B.; Houben, L.; Kessels, W.M.M.; Sanden, M.C.M. van de

    2007-01-01

    Applying in situ process diagnostics, we identified several process drifts occurring in the parallel plate plasma deposition of microcrystalline silicon (μc-Si:H). These process drifts are powder formation (visible from diminishing dc-bias and changing spatial emission profile on a time scale of 10 0 s), transient SiH 4 depletion (visible from a decreasing SiH emission intensity on a time scale of 10 2 s), plasma heating (visible from an increasing substrate temperature on a time scale of 10 3 s) and a still puzzling long-term drift (visible from a decreasing SiH emission intensity on a time scale of 10 4 s). The effect of these drifts on the crystalline volume fraction in the deposited films is investigated by selected area electron diffraction and depth-profiled Raman spectroscopy. An example shows how the transient depletion and long-term drift can be prevented by suitable process control. Solar cells deposited using this process control show enhanced performance. Options for process control of plasma heating and powder formation are discussed

  4. Extraction of the defect density of states in microcrystalline silicon from experimental results and simulation studies

    Tibermacine, T.; Ledra, M.; Ouhabab, N.; Merazga, A.

    2015-01-01

    The constant photocurrent method in the ac-mode (ac-CPM) is used to determine the defect density of states (DOS) in hydrogenated microcrystalline silicon (μc-Si:H) prepared by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD). The absorption coefficient spectrum (ac-α(hv)), is measured under ac-CPM conditions at 60 Hz. The measured ac-α(hv) is converted by the CPM spectroscopy into a DOS distribution covering a portion in the lower energy range of occupied states. We have found that the density of valence band-tail states falls exponentially towards the gap with a typical band-tail width of 63 meV. Independently, computer simulations of the ac-CPM are developed using a DOS model that is consistent with the measured ac-α(hv) in the present work and a previously measured transient photocurrent (TPC) for the same material. The DOS distribution model suggested by the measurements in the lower and in the upper part of the energy-gap, as well as by the numerical modelling in the middle part of the energy-gap, coincide reasonably well with the real DOS distribution in hydrogenated microcrystalline silicon because the computed ac-α(hv) is found to agree satisfactorily with the measured ac-α(hv). (paper)

  5. Analysis of IV characteristics of solar cells made of hydrogenated amorphous, polymorphous and microcrystalline silicon

    Hamadeh, H.

    2009-03-01

    The IV characteristics of pin solar cells made of amorphous, polymorphous and microcrystalline silicon were investigated. The temperature dependence was measured in the temperature range between 150 K and 395 K. This range covers the most terrestrial applications condition. Using simplex procedure, the IV parameter of the cells were deduce using line fitting. It has been shown that polymorphous silicon shows electrical properties that are close to properties of microcrystalline silicon but as it is well known, polymorphous silicon shows higher absorption similar to amorphous silicon. The polymorphous silicon solar cells showed higher efficiencies, lower shunting and higher filling factors. In the above mentioned temperature range, polymorphous silicon is the better material for the manufacturing of thin film hydrogenated silicon pin solar cells. More investigations concerning the structural properties are necessary to make stronger conclusions in regards to the stability of the material, what we hope to do in the future. (author)

  6. Low power high growth rate deposition of microcrystalline silicon

    Feltrin, A; Bugnon, G; Meillaud, F; Bailat, J; Ballif, C

    2008-01-01

    Microcrystalline growth regimes and solar cells obtained in different pressure and silane depletion conditions are studied in a large area KAI-S plasma reactor. The microcrystalline material quality is systematically investigated by Fourier Transform Photocurrent Spectroscopy (FTPS) to evaluate the defect density. It is shown that higher pressure and silane depletion positively affect the material quality. A clear correlation between FTPS measurements and cell efficiency is established, showi...

  7. Analysis of heating effect on the process of high deposition rate microcrystalline silicon

    Xiao-Dan, Zhang; He, Zhang; Chang-Chun, Wei; Jian, Sun; Guo-Fu, Hou; Shao-Zhen, Xiong; Xin-Hua, Geng; Ying, Zhao

    2010-01-01

    A possible heating effect on the process of high deposition rate microcrystalline silicon has been studied. It includes the discharge time-accumulating heating effect, discharge power, inter-electrode distance, and total gas flow rate induced heating effect. It is found that the heating effects mentioned above are in some ways quite similar to and in other ways very different from each other. However, all of them will directly or indirectly cause the increase of the substrate surface temperature during the process of depositing microcrystalline silicon thin films, which will affect the properties of the materials with increasing time. This phenomenon is very serious for the high deposition rate of microcrystalline silicon thin films because of the high input power and the relatively small inter-electrode distance needed. Through analysis of the heating effects occurring in the process of depositing microcrystalline silicon, it is proposed that the discharge power and the heating temperature should be as low as possible, and the total gas flow rate and the inter-electrode distance should be suitable so that device-grade high quality deposition rate microcrystalline silicon thin films can be fabricated

  8. Steady-state solution growth of microcrystalline silicon on nanocrystalline seed layers on glass

    Bansen, R.; Ehlers, C.; Teubner, Th.; Boeck, T.

    2016-09-01

    The growth of polycrystalline silicon layers on glass from tin solutions at low temperatures is presented. This approach is based on the steady-state solution growth of Si crystallites on nanocrystalline seed layers, which are prepared in a preceding process step. Scanning electron microscopy and atomic force microscopy investigations reveal details about the seed layer surfaces, which consist of small hillocks, as well as about Sn inclusions and gaps along the glass substrate after solution growth. The successful growth of continuous microcrystalline Si layers with grain sizes up to several ten micrometers shows the feasibility of the process and makes it interesting for photovoltaics. Project supported by the German Research Foundation (DFG) (No. BO 1129/5-1).

  9. Fabrication of heterojunction solar cells by using microcrystalline hydrogenated silicon oxide film as an emitter

    Banerjee, Chandan; Sritharathikhun, Jaran; Konagai, Makoto; Yamada, Akira

    2008-01-01

    Wide gap, highly conducting n-type hydrogenated microcrystalline silicon oxide (μc-SiO : H) films were prepared by very high frequency plasma enhanced chemical vapour deposition at a very low substrate temperature (170 deg. C) as an alternative to amorphous silicon (a-Si : H) for use as an emitter layer of heterojunction solar cells. The optoelectronic properties of n-μc-SiO : H films prepared for the emitter layer are dark conductivity = 0.51 S cm -1 at 20 nm thin film, activation energy = 23 meV and E 04 = 2.3 eV. Czochralski-grown 380 μm thick p-type (1 0 0) oriented polished silicon wafers with a resistivity of 1-10 Ω cm were used for the fabrication of heterojunction solar cells. Photovoltaic parameters of the device were found to be V oc = 620 mV, J sc = 32.1 mA cm -2 , FF = 0.77, η = 15.32% (active area efficiency)

  10. Nucleation of microcrystalline silicon: on the effect of the substrate surface nature and nano-imprint topography

    Palmans, J; Faraz, T; Verheijen, M A; Kessels, W M M; Creatore, M

    2016-01-01

    The nucleation of microcrystalline silicon thin-films has been investigated for various substrate natures and topographies. An earlier nucleation onset on aluminium-doped zinc oxide compared to glass substrates has been revealed, associated with a microstructure enhancement and reduced surface energy. Both aspects resulted in a larger crystallite density, following classical nucleation theory. Additionally, the nucleation onset was (plasma deposition) condition-dependent. Therefore, surface chemistry and its interplay with the plasma have been proposed as key factors affecting nucleation and growth. As such, preliminary proof of the substrate nature’s role in microcrystalline silicon growth has been provided. Subsequently, the impact of nano-imprint lithography prepared surfaces on the initial microcrystalline silicon growth has been explored. Strong topographies, with a 5-fold surface area enhancement, led to a reduction in crystalline volume fraction of ∼20%. However, no correlation between topography and microstructure has been found. Instead, the suppressed crystallization has been partially ascribed to a reduced growth flux, limited surface diffusion and increased incubation layer thickness, originating from the surface area enhancement when transiting from flat to nanostructured surfaces. Furthermore, fundamental plasma parameters have been reviewed in relation with surface topography. Strong topographies are not expected to affect the ion-to-growth flux ratio. However, the reduced ion flux (due to increasing surface area) further limited the already weak ion energy transfer to surface processes. Additionally, the atomic hydrogen flux, i.e. the driving force for microcrystalline growth, has been found to decrease by a factor of 10 when transiting from flat to nanostructured topography. This resulted in an almost 6-fold reduction of the hydrogen-to-growth flux ratio, a much stronger effect than the ion-to-growth flux ratio. Since previous studies regarding

  11. Carrier dynamics in microcrystalline silicon studied by time-resolved terahertz spectroscopy

    Fekete, Ladislav; Němec, Hynek; Kadlec, Filip; Kužel, Petr; Stuchlík, Jiří; Fejfar, Antonín; Kočka, Jan

    2006-01-01

    Roč. 352, - (2006), s. 2846-2849 ISSN 0022-3093 R&D Projects: GA AV ČR(CZ) KJB100100512 Institutional research plan: CEZ:AV0Z10100520 Keywords : silicon * solar cells * dielectric properties * relaxation * electric modulus * chemical vapor deposition * microcrystallinity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.362, year: 2006

  12. On the oxidation mechanism of microcrystalline silicon thin films studied by Fourier transform infrared spectroscopy

    Bronneberg, A. C.; Smets, A. H. M.; Creatore, M.; M. C. M. van de Sanden,

    2011-01-01

    Insight into the oxidation mechanism of microcrystalline silicon thin films has been obtained by means of Fourier transform infrared spectroscopy. The films were deposited by using the expanding thermal plasma and their oxidation upon air exposure was followed in time. Transmission spectra were

  13. Microcrystalline bottom cells in large area thin film silicon MICROMORPH™ solar modules

    Hoetzel, J.E.; Caglar, O.; Cashmore, J.S.; Goury, C.; Kalaš, J.; Klindworth, M.; Kupich, M.; Leu, G.F.; Lindic, M.H.; Losio, P.A.; Mates, Tomáš; Mereu, B.; Roschek, T.; Sinicco, I.

    2016-01-01

    Roč. 157, Dec (2016), s. 178-189 ISSN 0927-0248 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * material quality * PECVD * Raman crystallinity * grading * micromorph Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 4.784, year: 2016

  14. Conventional and 360 degree electron tomography of a micro-crystalline silicon solar cell

    Duchamp, Martial; Ramar, Amuthan; Kovács, András

    2011-01-01

    Bright-field (BF) and annular dark-field (ADF) electron tomography in the transmission electron microscope (TEM) are used to characterize elongated porous regions or cracks (simply referred to as cracks thereafter) in micro-crystalline silicon (μc-Si:H) solar cell. The limitations of inferring...

  15. Ultrafast carrier dynamics in microcrystalline silicon probed by time-resolved terahertz spectroscopy

    Fekete, Ladislav; Kužel, Petr; Němec, Hynek; Kadlec, Filip; Deyneka, Alexander; Stuchlík, Jiří; Fejfar, Antonín

    2009-01-01

    Roč. 79, č. 11 (2009), 115306/1-115306/13 ISSN 1098-0121 R&D Projects: GA MŠk(CZ) LC06040; GA AV ČR(CZ) IAA100100902 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z10100521 Keywords : microcrystalline silicon * amorphous silicon * terahertz * ultrafast * photoconductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009

  16. Plasma deposition of microcrystalline silicon solar cells. Looking beyond the glass

    Donker, M.N. van den

    2006-07-01

    Microcrystalline silicon emerged in the past decade as highly interesting material for application in efficient and stable thin film silicon solar cells. It consists of nanometer-sized crystallites embedded in a micrometer-sized columnar structure, which gradually evolves during the SiH{sub 4} based deposition process starting from an amorphous incubation layer. Understanding of and control over this transient and multi-scale growth process is essential in the route towards low-cost microcrystalline silicon solar cells. This thesis presents an experimental study on the technologically relevant high rate (5-10 Aa s{sup -1}) parallel plate plasma deposition process of state-of-the-art microcrystalline silicon solar cells. The objective of the work was to explore and understand the physical limits of the plasma deposition process as well as to develop diagnostics suitable for process control in eventual solar cell production. Among the developed non-invasive process diagnostics were a pyrometer, an optical spectrometer, a mass spectrometer and a voltage probe. Complete thin film silicon solar cells and modules were deposited and characterized. (orig.)

  17. Investigation of carrier density and mobility in microcrystalline silicon alloys using Hall effect and thermopower measurements; Untersuchung der Ladungstraegerkonzentration und -beweglichkeit in mikrokristallinen Siliziumlegierungen mit Hall-Effekt und Thermokraft

    Sellmer, Christian

    2012-08-31

    The electronic properties of amorphous and microcrystalline silicon layers in thin-film solar cells significantly affect the efficiency of solar cells. An important property of the individual layer is the electronic transport, which is described by the variables conductivity, photoconductivity, mobility, and carrier concentration. In the past, individual characterization methods were typically used to determine the electronic properties. Using the combination of Hall effect, conductivity, and thermoelectric power measurements additional variables can be derived, such as the effective density of states at the valence and conduction band edge, making a more detailed description of the material possible. To systematically study the electronic properties - in particular carrier mobility and carrier concentration - various series of silicon films are prepared for this work including microcrystalline silicon layers of different doping and crystallinity and a series of silicon films where the Fermi level is moved by irradiation with high energy electrons on one and the same sample. The results show that the transition from amorphous to microcrystalline transport is relatively abrupt. If the electron transport takes place in only amorphous regions, it is marked by the sign anomaly of the Hall effect. If a continuous crystalline path exists, the electronic properties are dominated by the crystalline volume fraction. The results of the measurements of silicon layers are compared with those of microcrystalline silicon carbide samples. Silicon carbide is especially interesting for future applications in thin-film solar cells due to high transparency and high conductivity. It is shown that the effective density of states at the valence and conduction band edge as a function of temperature in p- and n-type microcrystalline silicon and silicon carbide samples largely coincide with those of crystalline silicon or silicon carbide. A square root shaped profile of the density of

  18. Substrate temperature dependence of microcrystallinity in plasma-deposited, boron-doped hydrogenated silicon alloys

    Rajeswaran, G.; Kampas, F.J.; Vanier, P.E.; Sabatini, R.L.; Tafto, J.

    1983-01-01

    The glow-discharge decomposition of silane diluted in hydrogen using diborane as a dopant results in the deposition of p-type microcrystalline silicon films at relatively low temperatures. The conductivity of these films is critically dependent on the substrate temperature when the ratio of silane flow rate to total gas flow rate is 1%. Electron micrographs show that highly conducting films contain numerous clusters of 2.5-nm crystallites that are embedded in an amorphous medium

  19. Raman mapping of microcrystalline silicon thin films with high spatial resolution

    Ledinský, Martin; Vetushka, Aliaksi; Stuchlík, Jiří; Fejfar, Antonín; Kočka, Jan

    2010-01-01

    Roč. 7, 3-4 (2010), s. 704-707 ISSN 1862-6351 R&D Projects: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510; GA AV ČR(CZ) IAA100100902 Institutional research plan: CEZ:AV0Z10100521 Keywords : Raman * atomic force microscopy * microcrystalline silicon Subject RIV: BM - Solid Matter Physics ; Magnetism http://www3.interscience.wiley.com/journal/123277609/abstract

  20. Physical and mechanical properties of microcrystalline cellulose prepared from local agricultural residues

    El-Sakhawy, M.M.; Hassan, M.L.

    2005-01-01

    Microcrystalline cellulose (MCC) was prepared from local agricultural residues, namely, bagasse, rice straw, and cotton stalks bleached pulps. Hydrolysis of bleached pulps was carried out using hydrochloric or sulfuric acid to study the effect of the acid used on the properties of produced microcrystalline cellulose such as degree of polymerization (DP), crystallinity index (CrI), crystallite size, bulk density, particle size, and thermal stability. The mechanical properties of tablets made from microcrystalline cellulose of the different agricultural residues were tested and compared to commercial grade MCC. The use of rice straw pulp in different proportions as a source of silica to prepare silicified microcrystalline cellulose (SMCC) was carried out. The effect of the percent of silica on the mechanical properties of tablets before and after wet granulation was tested

  1. Physical and mechanical properties of microcrystalline cellulose prepared from local agricultural residues

    El-Sakhawy, M M; Hassan, M L [Cellulose and Paper Dept., National Research Center, Dokki, Cairo (Egypt)

    2005-07-01

    Microcrystalline cellulose (MCC) was prepared from local agricultural residues, namely, bagasse, rice straw, and cotton stalks bleached pulps. Hydrolysis of bleached pulps was carried out using hydrochloric or sulfuric acid to study the effect of the acid used on the properties of produced microcrystalline cellulose such as degree of polymerization (DP), crystallinity index (CrI), crystallite size, bulk density, particle size, and thermal stability. The mechanical properties of tablets made from microcrystalline cellulose of the different agricultural residues were tested and compared to commercial grade MCC. The use of rice straw pulp in different proportions as a source of silica to prepare silicified microcrystalline cellulose (SMCC) was carried out. The effect of the percent of silica on the mechanical properties of tablets before and after wet granulation was tested.

  2. Characterization of microcrystalline I-layer for solar cells prepared in low temperature - plastic compatible process

    Sliz, Rafal; Ahnood, Arman; Nathan, Arokia; Myllyla, Risto; Jabbour, Ghassan E.

    2012-01-01

    Microcrystalline silicon (mc-Si) lms deposited using a Plasma Enhanced Chemical Vapour Deposition (PECVD) process constitute an important material for manufacturing low-cost, large-area thin-lm devices, such as solar cells or thin-lm transistors

  3. Raman crystallinity and Hall Effect studies of microcrystalline silicon ...

    Aluminium induced crystallization (AIC) was used to crystallize sputtered amorphous silicon thin films on aluminium‐coated glass at annealing temperatures ranging from 250‐520°C in vacuum. Crystalline volume fractions were measured by Raman spectrometry as a function of annealing temperature. It was shown that the ...

  4. Microstructure and initial growth characteristics of the low temperature microcrystalline silicon films on silicon nitride surface

    Park, Young-Bae; Rhee, Shi-Woo

    2001-01-01

    Microstructure and initial growth characteristics of the hydrogenated microcrystalline Si (μc-Si:H) films grown on hydrogenated amorphous silicon nitride (a-SiN x :H) surface at low temperature were investigated using high resolution transmission electron microscope and micro-Raman spectroscopy. With increasing the Si and Si - H contents in the SiN x :H surfaces, μc-Si crystallites, a few nanometers in size, were directly grown on amorphous nitride surfaces. It is believed that the crystallites were grown through the nucleation and phase transition from amorphous to crystal in a hydrogen-rich ambient of gas phase and growing surface. The crystallite growth characteristics on the dielectric surface were dependent on the stoichiometric (x=N/Si) ratio corresponding hydrogen bond configuration of the SiN x :H surface. Surface facetting and anisotropic growth of the Si crystallites resulted from the different growth rate on the different lattice planes of Si. No twins and stacking faults were observed in the (111) lattice planes of the Si crystallites surrounding the a-Si matrix. This atomic-scale structure was considered to be the characteristic of the low temperature crystallization of the μc-Si:H by the strain relaxation of crystallites in the a-Si:H matrix. [copyright] 2001 American Institute of Physics

  5. Application of scanning Kelvin probe microscopy for the electrical characterization of microcrystalline silicon for photovoltaics

    Breymesser, A.

    2000-05-01

    In the last years microcrystalline silicon thin films have attracted great attention as a new photovoltaic material. With this material it is possible to combine simple and cheap low temperature deposition techniques known from amorphous silicon with the long-term stability of the photovoltaic performance like in bulk crystalline silicon solar cells. The critical point is the deposition procedure with numerous tunable parameters influencing the quality and character of the produced diode structures. Additionally there is a great uncertainty about unintentionally incorporated defects, which is not affected by the deposition parameters. Extended investigation of the material, diode and solar cell characteristics is essential in order to correlate the impact of deposition conditions with the quality of the devices. The situation is complicated due to the anisotropic and inhomogeneous character of microcrystalline silicon. Scanning Kelvin probe microscopy (SKPM) is a work function measurement method based on a scanning force microscope (SFM) and a modified Kelvin probe technique. Due to the excellent lateral resolution of the SFM work function measurements with resolutions far below the micrometer level can be carried out. Applied on doped microcrystalline silicon structures it is possible to visualize the position of the Fermi level within the band gap and the influence of the deposition conditions on it. Within this work a SKPM based on a commercially available SFM was constructed and built. Great effort was concentrated on the characterization of the SKPM experiment. On the basis of an extended knowledge about the performance investigations concentrated on cross sections of microcrystalline silicon diode structures produced by hot-wire chemical vapor deposition (HW-CVD). A pin structure for the diodes was chosen due to the low diffusion lengths within this rather defective material. The evolution of the built-in electric drift field within the intrinsic absorber is

  6. The open-circuit voltage in microcrystalline silicon solar cells of different degrees of crystallinity

    Nath, Madhumita; Roca i Cabarrocas, P.; Johnson, E.V.; Abramov, A.; Chatterjee, P.

    2008-01-01

    We have used a detailed electrical-optical computer model (ASDMP) in conjunction with the experimental characterization of microcrystalline silicon thin-film solar cells of different degrees of crystallinity (but having identical P- and N-layers) to understand the observed decrease of the open-circuit voltage with increasing crystalline fraction. In order to model all aspects of the experimental current density-voltage and quantum efficiency characteristics of cells having low (∼ 75%) and high (over 90%) crystalline fraction, we had to assume both a higher mobility gap defect density and a lower band gap for the more crystallized material. The former fact is widely known to bring down the open-circuit voltage. Our calculations also reveal that the proximity of the quasi-Fermi levels to the energy bands in the cell based on highly crystallized (and assumed to have a lower band gap) microcrystalline silicon results in higher free and trapped carrier densities in this device. The trapped hole population is particularly high at and close to the P/I interface on account of the higher inherent defect density in this region and the fact that the hole quasi-Fermi level is close to the valence band edge here. This fact results in a strong interface field, a collapse of the field in the volume, and hence a lower open-circuit voltage. Thus a combination of higher mobility gap defects and a lower band gap is probably the reason for the lower open-circuit voltage in cells based on highly crystallized microcrystalline silicon

  7. Solar cell of 6.3% efficiency employing high deposition rate (8 nm/s) microcrystalline silicon photovoltaic layer

    Sobajima, Yasushi; Nishino, Mitsutoshi; Fukumori, Taiga; Kurihara, Masanori; Higuchi, Takuya; Nakano, Shinya; Toyama, Toshihiko; Okamoto, Hiroaki [Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Machikaneyama-cho 1-3, Osaka 560-8531 (Japan)

    2009-06-15

    Microcrystalline silicon ({mu}c-Si) films deposited at high growth rates up to 8.1 nm/s prepared by very-high-frequency-plasma-enhanced chemical vapor deposition (VHF-PECVD) at 18-24 Torr have been investigated. The relation between the deposition rates and input power revealed the depletion of silane. Under high-pressure deposition (HPD) conditions, the structural properties were improved. Furthermore, applying {mu}c-Si to n-i-p solar cells, short-circuit current density (J{sub SC}) was increased in accordance with the improvement of microstructure of i-layer. As a result, a conversion efficiency of 6.30% has been achieved employing the i-layer deposited at 8.1 nm/s under the HPD conditions. (author)

  8. Preparation and Characterization of Microcrystalline Cellulose (MCC from Kenaf and Cotton Stem

    Farshad Mirehki

    2013-11-01

    Full Text Available Cellulose, microcrystalline cellulose (MCC and nanofiber cellulose are the ones of materials which are being used recently as biodegradable filler and reinforcing agent for making composites. In this research, microcrystalline cellulose were prepared from kenaf and cotton bast by hydrochloric acid hydrolysis. The effects of hydrolysis condition on amount of crystallinity and crystal size of MCC were investigated by infrared spectroscopy (FT-IR, X-ray diffraction (XRD and scanning electron microscopy (SEM. Results have shown that in both samples increasing the acid ratio increased the crystallinity; however, the size of crystals did not change. SEM results have shown that after hydrolysis the size of sample particles was micro.

  9. High efficiency high rate microcrystalline silicon thin-film solar cells deposited at plasma excitation frequencies larger than 100 MHz

    Strobel, C.; Leszczynska, B.; Merkel, U.; Kuske, J.; Fischer, D.D.; Albert, M.; Holovský, Jakub; Michard, S.

    2015-01-01

    Roč. 143, Dec (2015), 347-353 ISSN 0927-0248 R&D Projects: GA MŠk 7E12029 EU Projects: European Commission(XE) 283501 - Fast Track Institutional support: RVO:68378271 Keywords : VHF * PECVD * microcrystalline silicon * solar cell * high rate * high efficiency Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.732, year: 2015

  10. Amorphous and microcrystalline silicon applied in very thin tandem solar cells

    Schicho, Sandra

    2011-07-28

    Thin-film solar cells are fabricated by low-cost production processes, and are therefore an alternative to conventionally used wafer solar cells based on crystalline silicon. Due to the different band gaps, tandem cells that consist of amorphous (a-Si:H) and microcrystalline ({mu}c-Si:H) single junction solar cells deposited on top of each other use the solar spectrum much more efficient than single junction solar cells. The silicon layers are usually deposited on TCO (Transparent Conductive Oxide)-coated glass and metal- or plastic foils. Compared to the CdTe and CIGS based thin-film technologies, silicon thin-film solar cells have the advantage that no limitation of raw material supply is expected and no toxic elements are used. Nevertheless, the production cost per Wattpeak is the decisive factor concerning competitiveness and can be reduced by, e.g., shorter deposition times or reduced material consumption. Both cost-reducing conceptions are simultaneously achieved by reducing the a-Si:H and {mu}c-Si:H absorber layer thicknesses in a tandem device. In the work on hand, the influence of an absorber layer thickness reduction up to 77% on the photovoltaic parameters of a-Si:H/{mu}c-Si:H tandem solar cells was investigated. An industry-oriented Radio Frequency Plasma-Enhanced Chemical Vapour Deposition (RF-PECVD) system was used to deposit the solar cells on glass substrates coated with randomly structured TCO layers. The thicknesses of top and bottom cell absorber layers were varied by adjusting the deposition time. Reduced layer thicknesses lead to lower absorption and, hence, to reduced short-circuit current densities which, however, are partially balanced by higher open-circuit voltages and fill factors. Furthermore, by using very thin amorphous top cells, the light-induced degradation decreases tremendously. Accordingly, a thickness reduction of 75% led to an efficiency loss of only 21 %. By adjusting the parameters for the deposition of a-Si:H top cells, a

  11. Piezoelectric photothermal study of the optical properties of microcrystalline silicon near the bandgap

    Fukuyama, A.; Sakamoto, S.; Sonoda, S.; Wang, P.; Sakai, K.; Ikari, T.

    2006-01-01

    The optical absorption spectra of hydrogenated microcrystalline silicon (μc-Si:H) films deposited on glass and transparent conductive oxide (TCO) covered glass substrates were measured by using the piezoelectric photothermal (PPT) technique. The effects of the deposition rate on the optical absorption of μc-Si:H thin films were investigated from the nonradiative transition point of view. It was found that increasing the deposition rate resulted in a decrease of optical absorption and a shift of effective energy gap to the higher photon energy side. These changes in the optical properties of μc-Si:H cause the decrease of the number of carriers optically generated by absorbing sunlight, and results in a reduction in the photovoltaic conversion efficiency of the solar cells for high deposition rate samples. The usefulness of the PPT method for investigating the optical properties of thin and transparent μc-Si:H films was also demonstrated

  12. Local photoconductivity of microcrystalline silicon thin films measured by conductive atomic force microscopy

    Ledinsky, Martin; Fejfar, Antonin; Vetushka, Aliaksei; Stuchlik, Jiri; Rezek, Bohuslav; Kocka, Jan [Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i. Cukrovarnicka 10, 162 00 Praha 6 (Czech Republic)

    2011-11-15

    Local currents measured under standard conductive atomic force microscopy (C-AFM) conditions on microcrystalline silicon ({mu}c-Si:H) thin films were studied. It was shown that the AFM detection diode illuminating the AFM cantilever (see the figure on the right side) 100 x enhanced the current flows through the photosensitive {mu}c-Si:H layer. The local current map and current-voltage characteristics were measured under dark conditions. This study enables mapping of both the dark current and photocurrent. C-AFM cantilever illuminated by the detection diode during measurement on {mu}c-Si:H thin film. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers

    Goyal Prabal

    2016-01-01

    Full Text Available The use of hexamethyldisiloxane (HMDSO as an oxygen source for the growth of p-type silicon-based layers deposited by Plasma Enhanced Chemical Vapor Deposition is evaluated. The use of this source led to the incorporation of almost equivalent amounts of oxygen and carbon, resulting in microcrystalline silicon oxycarbide thin films. The layers were examined with characterisation techniques including Spectroscopic Ellipsometry, Dark Conductivity, Fourier Transform Infrared Spectroscopy, Secondary Ion Mass Spectrometry and Transmission Electron Microscopy to check material composition and structure. Materials studies show that the refractive indices of the layers can be tuned over the range from 2.5 to 3.85 (measured at 600 nm and in-plane dark conductivities over the range from 10-8 S/cm to 1 S/cm, suggesting that these doped layers are suitable for solar cell applications. The p-type layers were tested in single junction amorphous silicon p-i-n type solar cells.

  14. Improved electrical and transport characteristics of amorphous silicon by enriching with microcrystalline silicon

    Mireshghi, A.; Hong, W.S.; Drewery, J.; Jing, T.; Kaplan, S.N.; Lee, H.K.; Perez-Mendez, V.

    1994-04-01

    The authors have deposited n-i-p diodes with microcrystalline intrinsic layers for radiation detection applications. The diodes show interesting electrical characteristics which have not been reported before. From TOF measurement for their best samples, the authors obtained μ e values which are about 3 times larger than their standard a-Si:H. for μτ values approximately a factor of 2 improvement was observed. The N* D values derived from hole-onset measurements show lower ionized dangling bond density than normal a-Si:H material. The authors propose a simple model which can very well explain the experimental results

  15. Top-gate microcrystalline silicon TFTs processed at low temperature (<200 deg. C)

    Saboundji, A.; Coulon, N.; Gorin, A.; Lhermite, H.; Mohammed-Brahim, T.; Fonrodona, M.; Bertomeu, J.; Andreu, J.

    2005-01-01

    N-type as well P-type top-gate microcrystalline silicon thin film transistors (TFTs) are fabricated on glass substrates at a maximum temperature of 200 deg. C. The active layer is an undoped μc-Si film, 200 nm thick, deposited by Hot-Wire Chemical Vapor. The drain and source regions are highly phosphorus (N-type TFTs) or boron (P-type TFTs)-doped μc-films deposited by HW-CVD. The gate insulator is a silicon dioxide film deposited by RF sputtering. Al-SiO 2 -N type c-Si structures using this insulator present low flat-band voltage,-0.2 V, and low density of states at the interface D it =6.4x10 10 eV -1 cm -2 . High field effect mobility, 25 cm 2 /V s for electrons and 1.1 cm 2 /V s for holes, is obtained. These values are very high, particularly the hole mobility that was never reached previously

  16. Impact of microcrystalline silicon carbide growth using hot-wire chemical vapor deposition on crystalline silicon surface passivation

    Pomaska, M.; Beyer, W.; Neumann, E.; Finger, F.; Ding, K.

    2015-01-01

    Highly crystalline microcrystalline silicon carbide (μc-SiC:H) with excellent optoelectronic material properties is a promising candidate as highly transparent doped layer in silicon heterojunction (SHJ) solar cells. These high quality materials are usually produced using hot wire chemical vapor deposition under aggressive growth conditions giving rise to the removal of the underlying passivation layer and thus the deterioration of the crystalline silicon (c-Si) surface passivation. In this work, we introduced the n-type μc-SiC:H/n-type μc-SiO x :H/intrinsic a-SiO x :H stack as a front layer configuration for p-type SHJ solar cells with the μc-SiO x :H layer acting as an etch-resistant layer against the reactive deposition conditions during the μc-SiC:H growth. We observed that the unfavorable expansion of micro-voids at the c-Si interface due to the in-diffusion of hydrogen atoms through the layer stack might be responsible for the deterioration of surface passivation. Excellent lifetime values were achieved under deposition conditions which are needed to grow high quality μc-SiC:H layers for SHJ solar cells. - Highlights: • High surface passivation quality was preserved after μc-SiC:H deposition. • μc-SiC:H/μc-SiO x :H/a-SiO x :H stack a promising front layer configuration • Void expansion at a-SiO x :H/c-Si interface for deteriorated surface passivation • μc-SiC:H provides a high transparency and electrical conductivity.

  17. Influence of polyvinylpyrrolidone, microcrystalline cellulose and colloidal silicon dioxide on technological characteristics of a high-dose Petiveria alliacea tablet.

    García-Pérez, Martha-Estrella; Lemus-Rodríguez, Zoe; Hung-Arbelo, Mario; Vistel-Vigo, Marlen

    2017-12-01

    Petiveria alliacea L. (Phytolaccaceae) is a perennial shrub used by its immunomodulatory, anticancerogenic and anti-inflammatory properties. This study determined the influence of polyvinylpyrrolidone (PVP), colloidal silicon dioxide (CSD) and microcrystalline cellulose (MC) on the technological characteristic of a high-dose P. alliacea tablet prepared by the wet granulation method. The botanical and pharmacognostic analysis of the plant material was firstly performed, followed by a 2 3 factorial design considering three factors at two levels: (a) the binder (PVP) incorporated in formulation at 10% and 15% (w/w); (b) the compacting agent (CSD) added at 10% and 15% (w/w) and; (c) the diluent (MC) included at 7.33% and 12.46% (w/w). The analysis of pharmaceutical performance and the accelerated and long-term stability of the best prototype were also completed. The binder, compacting agent and the interaction binder/diluent had a significant impact on breaking force of high-dose P. alliacea tablet. The optimum formula was found to contain 15% (w/w) of CSD, 7.33% (w/w) of MC and 10% (w/w) of PVP. At these conditions, the tablet shows a breaking force of 77.96 N, a friability of 0.39%, a total phenol content of 1.30 mg/tablet and a maximum disintegration time of 6 min. The use of adequate amounts of PVP, MC and CSD as per the factorial design allowed the preparation of a tablet suitable for administration, despite the inappropriate flow and compressibility properties of the P. alliacea powder.

  18. Microcrystalline silicon oxides for silicon-based solar cells: impact of the O/Si ratio on the electronic structure

    Bär, M.; Starr, D. E.; Lambertz, A.; Holländer, B.; Alsmeier, J.-H.; Weinhardt, L.; Blum, M.; Gorgoi, M.; Yang, W.; Wilks, R. G.; Heske, C.

    2014-10-01

    Hydrogenated microcrystalline silicon oxide (μc-SiOx:H) layers are one alternative approach to ensure sufficient interlayer charge transport while maintaining high transparency and good passivation in Si-based solar cells. We have used a combination of complementary x-ray and electron spectroscopies to study the chemical and electronic structure of the (μc-SiOx:H) material system. With these techniques, we monitor the transition from a purely Si-based crystalline bonding network to a silicon oxide dominated environment, coinciding with a significant decrease of the material's conductivity. Most Si-based solar cell structures contain emitter/contact/passivation layers. Ideally, these layers fulfill their desired task (i.e., induce a sufficiently high internal electric field, ensure a good electric contact, and passivate the interfaces of the absorber) without absorbing light. Usually this leads to a trade-off in which a higher transparency can only be realized at the expense of the layer's ability to properly fulfill its task. One alternative approach is to use hydrogenated microcrystalline silicon oxide (μc-SiOx:H), a mixture of microcrystalline silicon and amorphous silicon (sub)oxide. The crystalline Si regions allow charge transport, while the oxide matrix maintains a high transparency. To date, it is still unclear how in detail the oxygen content influences the electronic structure of the μc-SiOx:H mixed phase material. To address this question, we have studied the chemical and electronic structure of the μc-SiOx:H (0 0.5, we observe a pronounced decrease of Si 3s - Si 3p hybridization in favor of Si 3p - O 2p hybridization in the upper valence band. This coincides with a significant increase of the material's resistivity, possibly indicating the breakdown of the conducting crystalline Si network. Silicon oxide layers with a thickness of several hundred nanometres were deposited in a PECVD (plasma-enhanced chemical vapor deposition) multi chamber system

  19. Disilane as a growth rate catalyst of plasma deposited microcrystalline silicon thin films

    Dimitrakellis, P.; Kalampounias, A. G.; Spiliopoulos, N.; Amanatides, E.; Mataras, D.; Lahootun, V.; Coeuret, F.; Madec, A.

    2016-07-01

    The effect of small disilane addition on the gas phase properties of silane-hydrogen plasmas and the microcrystalline silicon thin films growth is presented. The investigation was conducted in the high pressure regime and for constant power dissipation in the discharge with the support of plasma diagnostics, thin film studies and calculations of discharge microscopic parameters and gas dissociation rates. The experimental data and the calculations show a strong effect of disilane on the electrical properties of the discharge in the pressure window from 2 to 3 Torr that is followed by significant raise of the electron number density and the drop of the sheaths electric field intensity. Deposition rate measurements show an important four to six times increase even for disilane mole fractions as low as 0.3 %. The deposition rate enhancement was followed by a drop of the material crystalline volume fraction but films with crystallinity above 40 % were deposited with different combinations of total gas pressure, disilane and silane molar ratios. The enhancement was partly explained by the increase of the electron impact dissociation rate of silane which rises by 40% even for 0.1% disilane mole fraction. The calculations of the gas usage, the dissociation and the deposition efficiencies show that the beneficial effect on the growth rate is not just the result of the increase of Si-containing molecules density but significant changes on the species participating to the deposition and the mechanism of the film growth are caused by the disilane addition. The enhanced participation of the highly sticking to the surface radical such as disilylene, which is the main product of disilane dissociation, was considered as the most probable reason for the significant raise of the deposition efficiency. The catalytic effect of such type of radical on the surface reactivity of species with lower sticking probability is further discussed, while it is also used to explain the restricted

  20. Disilane as a growth rate catalyst of plasma deposited microcrystalline silicon thin films

    Dimitrakellis, P.; Amanatides, E.; Mataras, D.; Kalampounias, A. G.; Spiliopoulos, N.; Lahootun, V.; Coeuret, F.; Madec, A.

    2016-01-01

    The effect of small disilane addition on the gas phase properties of silane-hydrogen plasmas and the microcrystalline silicon thin films growth is presented. The investigation was conducted in the high pressure regime and for constant power dissipation in the discharge with the support of plasma diagnostics, thin film studies and calculations of discharge microscopic parameters and gas dissociation rates. The experimental data and the calculations show a strong effect of disilane on the electrical properties of the discharge in the pressure window from 2 to 3 Torr that is followed by significant raise of the electron number density and the drop of the sheaths electric field intensity. Deposition rate measurements show an important four to six times increase even for disilane mole fractions as low as 0.3 %. The deposition rate enhancement was followed by a drop of the material crystalline volume fraction but films with crystallinity above 40 % were deposited with different combinations of total gas pressure, disilane and silane molar ratios. The enhancement was partly explained by the increase of the electron impact dissociation rate of silane which rises by 40% even for 0.1% disilane mole fraction. The calculations of the gas usage, the dissociation and the deposition efficiencies show that the beneficial effect on the growth rate is not just the result of the increase of Si-containing molecules density but significant changes on the species participating to the deposition and the mechanism of the film growth are caused by the disilane addition. The enhanced participation of the highly sticking to the surface radical such as disilylene, which is the main product of disilane dissociation, was considered as the most probable reason for the significant raise of the deposition efficiency. The catalytic effect of such type of radical on the surface reactivity of species with lower sticking probability is further discussed, while it is also used to explain the restricted

  1. The relationship between I{sub H{sub {alpha}}} /(I{sub SiH}{sup *}){sup 2} and crystalline volume fraction in microcrystalline silicon growth

    Chantana, Jakapan; Higuchi, Takuya; Nagai, Tomoyuki; Sasaki, Shota; Sobajima, Yasushi; Toyama, Toshihiko; Sada, Chitose; Matsuda, Akihisa; Okamoto, Hiroaki [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan)

    2010-03-15

    Optical-emission-intensity ratio of I{sub H{sub {alpha}}} /(I{sub SiH}{sup *}) during film growth has been used as a simple indicator to predict crystallinity (crystal-volume fraction: X{sub C}) in the resulting microcrystalline silicon ({mu}c-Si:H) thin films. The relationship between I{sub H{sub {alpha}}} /(I{sub SiH}{sup *}) and X{sub C} has been checked under a wide variety of film-preparation conditions including low-deposition-rate (<0.1 nm/s) and high-deposition-rate (>5 nm/s) cases. On the basis of theoretical consideration, we have proposed optical-emission-intensity ratio of I{sub H{sub {alpha}}} /(I{sub SiH}{sup *}) {sup 2} as a new indicator of X{sub C} during film growth of {mu}c-Si:H. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  2. Increasing the deposition rate of microcrystalline and amorphous silicon thin films for photovoltaic applications - Phase IV: 1997-1999

    NONE

    2000-07-01

    This report on behalf of the Swiss Federal Office of Energy (SFOE) describes Phase IV of the project to test the feasibility and usefulness of Very High Frequency (VHF) plasma operation in large-area reactors suitable for the production of solar cell panels using thinly-deposited micro-crystalline silicon films. The report discusses the results of fast-deposition tests and trials using high-current DC arcs and VHF techniques to obtain deposition rates and film quality suitable for industrial processes for the production of thin-film solar cell panels. The effects of alternative plasma chemistry were also studied by adding silicon tetrafluoride to the standard silane/hydrogen mixtures. The report is concluded with calculations for optimum radio-frequency (RF) contact configuration for large area reactors with 1 m{sup 2} electrodes.

  3. Characterization of microcrystalline I-layer for solar cells prepared in low temperature - plastic compatible process

    Sliz, Rafal

    2012-06-01

    Microcrystalline silicon (mc-Si) lms deposited using a Plasma Enhanced Chemical Vapour Deposition (PECVD) process constitute an important material for manufacturing low-cost, large-area thin-lm devices, such as solar cells or thin-lm transistors. Although the deposition of electronic-grade mc-Si using the PECVD process is now well established, the high substrate temperature required (~400°C) does not lend itself to electronic devices with exible form factors fabricated on low-cost plastic substrates. In this study, we rst investigated an intrinsic mc-Si layer deposited at plastic-compatible substrate temperatures (~150°C) by characterising the properties of the lm and then evaluated its applicability to p-i-n solar cells though device characterisation. When the performance of the solar cell was correlated with lm properties, it was found that, although it compared unfavourably with mc-Si deposited at higher temperatures, it remained a very promising option. Nonetheless, further development is required to increase the overall eciency of mc-Si exible solar cells.

  4. A new view of microcrystalline silicon: The role of plasma processing in achieving a dense and stable absorber material for photovoltaic applicationsv

    Bugnon, G.; Parascandolo, G.; Söderström, T.; Cuony, P.; Despeisse, M.; Hänni, S.; Holovský, Jakub; Meillaud, F.; Ballif, C.

    2012-01-01

    Roč. 22, č. 17 (2012), s. 3665-3671 ISSN 1616-301X Institutional research plan: CEZ:AV0Z10100521 Keywords : solar cell * microcrystalline silicon * nanoporous Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 9.765, year: 2012 http://onlinelibrary.wiley.com/doi/10.1002/adfm.201200299/pdf

  5. Comparison between periodic and stochastic parabolic light trapping structures for thin-film microcrystalline Silicon solar cells.

    Peters, M; Battaglia, C; Forberich, K; Bläsi, B; Sahraei, N; Aberle, A G

    2012-12-31

    Light trapping is of very high importance for silicon photovoltaics (PV) and especially for thin-film silicon solar cells. In this paper we investigate and compare theoretically the light trapping properties of periodic and stochastic structures having similar geometrical features. The theoretical investigations are based on the actual surface geometry of a scattering structure, characterized by an atomic force microscope. This structure is used for light trapping in thin-film microcrystalline silicon solar cells. Very good agreement is found in a first comparison between simulation and experimental results. The geometrical parameters of the stochastic structure are varied and it is found that the light trapping mainly depends on the aspect ratio (length/height). Furthermore, the maximum possible light trapping with this kind of stochastic structure geometry is investigated. In a second step, the stochastic structure is analysed and typical geometrical features are extracted, which are then arranged in a periodic structure. Investigating the light trapping properties of the periodic structure, we find that it performs very similar to the stochastic structure, in agreement with reports in literature. From the obtained results we conclude that a potential advantage of periodic structures for PV applications will very likely not be found in the absorption enhancement in the solar cell material. However, uniformity and higher definition in production of these structures can lead to potential improvements concerning electrical characteristics and parasitic absorption, e.g. in a back reflector.

  6. High-rate synthesis of microcrystalline silicon films using high-density SiH4/H2 microwave plasma

    Jia, Haijun; Saha, Jhantu K.; Ohse, Naoyuki; Shirai, Hajime

    2007-01-01

    A high electron density (> 10 11 cm -3 ) and low electron temperature (1-2 eV) plasma is produced by using a microwave plasma source utilizing a spoke antenna, and is applied for the high-rate synthesis of high quality microcrystalline silicon (μc-Si) films. A very fast deposition rate of ∼ 65 A/s is achieved at a substrate temperature of 150 deg. C with a high Raman crystallinity and a low defect density of (1-2) x 10 16 cm -3 . Optical emission spectroscopy measurements reveal that emission intensity of SiH and intensity ratio of H α /SiH are good monitors for film deposition rate and film crystallinity, respectively. A high flux of film deposition precursor and atomic hydrogen under a moderate substrate temperature condition is effective for the fast deposition of highly crystallized μc-Si films without creating additional defects as well as for the improvement of film homogeneity

  7. Local photoconductivity of microcrystalline silicon thin films measured by conductive atomic force microscopy

    Ledinský, Martin; Fejfar, Antonín; Vetushka, Aliaksi; Stuchlík, Jiří; Rezek, Bohuslav; Kočka, Jan

    2011-01-01

    Roč. 5, 10-11 (2011), s. 373-375 ISSN 1862-6254 R&D Projects: GA MŠk(CZ) LC06040; GA MŠk(CZ) MEB061012; GA AV ČR KAN400100701; GA MŠk LC510 EU Projects: European Commission(XE) 240826 - PolySiMode Institutional research plan: CEZ:AV0Z10100521 Keywords : amorphous silicon * nanocrystalline silicon * thin films * atomic force microscopy * photoconductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.218, year: 2011

  8. Process of preparing tritiated porous silicon

    Tam, Shiu-Wing

    1997-01-01

    A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.

  9. Microcrystalline silicon growth by low laser energy crystallization on a plastic substrate

    Kim, D. Y.; Seo, C. K.; Shim, M. S.; Kim, C. H.; Yi, J.

    2004-01-01

    We are reporting the crystallization of amorphous silicon (a-Si) using a XeCl excimer laser treatment. Although polycarbonate (PC) plastic substrates are very weak at high temperatures of more than 150 .deg. C, they are very useful for applications to microelectronics because of light weight, high transmittance, and flexibility. In order to crystallize a-Si films on plastic substrates, we suggest that a CeO 2 seed layer will be very helpful at a low laser energy density. The seed layer is deposited at room temperature by rf using magnetron sputtering. A seed layer deposition method will be also presented in detail in this article. We compare a-Si crytallization without a seed layer with one with a seed layer deposited between the a-Si and the plastic substrate. The a-Si was deposited on the plastic substrate by using inductively coupled plasma Chemical-Vapor Deposition (ICPCVD) at the room temperature. In this paper, we will present the crystallization properties of a-Si with and without a CeO 2 seed layer on the plastic substrate.

  10. Exploring the potential of polacrilin potassium as a novel superdisintegrant in microcrystalline cellulose based pellets prepared by extrusion-spheronization

    Amita K Joshi

    2011-01-01

    Full Text Available Polacrilin potassium (PP, an ion exchange resin, was used as a superdisintegrant to improve the dissolution of rifampicin, from microcrystalline cellulose (MCC based pellets prepared by extrusion-spheronization. Production of fast release pellets by extrusion-spheronization using MCC is a complicated process. In the present study, pellets were prepared containing 50% w/w rifampicin (BCS class II drug and 40% w/w MCC as extrusion-spheronization aid. Different levels of PP and lactose ratio investigated were 0:10, 2:8, 4:6, 6:4, 8:2, and 10:0. Pellets were evaluated for yield, size, size distribution, shape, porosity, friability, residual moisture, and dissolution efficiency (DE at 30 minutes. Incorporation of this novel superdisintegrant had no adverse effect on the mechanical and micromeritic characteristics of pellets. All the batches of pellets showed high yields′, ~90%; narrow particle size distribution; aspect ratio, 1.0-1.1; friability, <1%; and porosity, 45.51-49.84%. Dissolution profiles were compared using model-independent approaches; DE and similarity factor, f 2 . Addition of Polacrilin results in significant improvement in the DE of rifampicin. The dissolution profiles were significantly different from the dissolution profile of pellets formulated without PP. This preliminary study indicates that PP can serve as an effective superdisintegrant in MCC pellets prepared by extrusion-spheronization.

  11. Polyvinyl Chloride / Attapulgite / Micro-crystalline Cellulose (MCC Composites Preparation and Analysis of the Role of MCC as a Compatibilizer

    Bo Wang

    2015-09-01

    Full Text Available To improve the performance of polyvinyl chloride (PVC, composites incorporating polyvinyl chloride (PVC, attapulgite nanoparticles (ANPs, and microcrystalline cellulose (MCC were successfully prepared. The composites had higher vicat softening temperatures (VSTs and the MCC had a great influence on mechanical properties of the composites. When MCC was added from 0 to 5 per hundred parts of PVC (phr, the mechanical properties of the composites increased, but the mechanical properties of the composites decreased when the MCC was more than 5 phr. The tensile breaking stress, tensile strength, and impact strength were maximized with increases of 19.76 N (4.1%, 29.66 MPa (15.5%, and 13.8 MPa (7% when 5 phr MCC was added. Infrared spectral analysis indicated that MCC and ANPs were present in the composites. Scanning electron microscopy showed that the composites system was distributed into two phases, which indicated that MCC in composites was dissolved in the PVC matrix, and some of MCC coated the surface of ANPs as a compatibilizer. Overall, this study provided a promising method for PVC modification to improve its performance.

  12. Gas-temperature control in VHF- PECVD process for high-rate (>5 nm/s) growth of microcrystalline silicon thin films

    Sobajima, Yasushi; Higuchi, Takuya; Chantana, Jakapan; Toyama, Toshihiko; Sada, Chitose; Matsuda, Akihisa; Okamoto, Hiroaki [Graduate School of Engineering Science, Osaka University, Toyonaka City (Japan)

    2010-04-15

    Surface-heating phenomenon by the radiation from high density plasma during growth of microcrystalline silicon ({mu}c-Si:H) thin films at high rate (> 5 nm/sec) is one of the crucial issues to be solved for obtaining high quality intrinsic-layer material for solar cells. We have utilized an optical emission spectroscopy (OES) in the plasma to observe the time evolution of gas temperature during film growth as well as the film-growth rate under {mu}c-Si:H deposition conditions at high rate. Gas temperature has been successfully controlled by changing total flow rate of monosilane (SiH{sub 4})/hydrogen (H{sub 2}) gas mixture, leading to a drastic improvement of optoelectronic properties in the resulting {mu}c-Si:H. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. An improved method of preparing silicon carbide

    Baney, R.H.

    1979-01-01

    A method of preparing silicon carbide is described which comprises forming a desired shape from a polysilane of the average formula:[(CH 3 ) 2 Si][CH 3 Si]. The polysilane contains from 0 to 60 mole percent (CH 3 ) 2 Si units and from 40 to 100 mole percent CH 3 Si units. The remaining bonds on the silicon are attached to another silicon atom or to a halogen atom in such manner that the average ratio of halogen to silicon in the polysilane is from 0.3:1 to 1:1. The polysilane has a melt viscosity at 150 0 C of from 0.005 to 500 Pa.s and an intrinsic viscosity in toluene of from 0.0001 to 0.1. The shaped polysilane is heated in an inert atmosphere or in a vacuum to an elevated temperature until the polysilane is converted to silicon carbide. (author)

  14. Silicon nanoparticles: Preparation, properties, and applications

    Chang Huan; Sun Shu-Qing

    2014-01-01

    Silicon nanoparticles have attracted great attention in the past decades because of their intriguing physical properties, active surface state, distinctive photoluminescence and biocompatibility. In this review, we present some of the recent progress in preparation methodologies and surface functionalization approaches of silicon nanoparticles. Further, their promising applications in the fields of energy and electronic engineering are introduced. (invited review — international conference on nanoscience and technology, china 2013)

  15. Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

    Taweewat Krajangsang

    2014-01-01

    Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

  16. The preparation by extrusion/spheronization and the properties of pellets containing drugs, microcrystalline cellulose and glyceryl monostearate.

    Chatchawalsaisin, Jittima; Podczeck, Fridrun; Newton, J Michael

    2005-01-01

    Pellets have been prepared by extrusion and spheronization containing microcrystalline cellulose (MCC) and four model drugs with decreasing order of solubility, paracetamol (P), diclofenac sodium (D), ibuprofen (IB) and indomethacin (IN) at a 10% level with and without the addition of a range of levels of glyceryl monostearate (GMS). The drugs differed in their response to extrusion in that all formulations containing the drug D had a 'steady state' extrusion profile whereas the other three drugs exhibited 'forced flow' indicating the possibility of water migration during the process of ram extrusion. The presence of GMS did not influence this effect. The drug D also required consistently less water to function than the other three drugs. In spite of these differences in extrusion performance, it was possible to prepare satisfactory pellets from formulations of all the drugs with 0, 30 and 60% GMS combined with 90, 60 or 30% of MCC at a range of water levels. It was also possible to prepare pellets containing the drug D with 70, 80 and 90% GMS, with corresponding quantities of 20, 10 and 0% of MCC. It was also possible to prepare the pellet formulations by dispersing the drugs in molten GMS, grinding and processing this with MCC and water. Such systems retained the processing characteristics of the composition made by the blending of the powder. The presence of GMS in all cases reduced the quantity of water required for the process to function. The steady state or the mean of the range of the forces observed during forced flow, were dependent on the composition and the quantity of water added. The surface of the extrudate appeared smooth and measurements of surface roughness established that the value of the rugosity R(a) for any of the extrudates did not exceed 6 microm. The extrudate diameter was found to increase with the quantity of GMS in the formulation. The pellets produced were all within a relatively narrow size range (three sieve fractions of a root two

  17. Compaction mechanism and tablet strength of unlubricated and lubricated (silicified) microcrystalline cellulose

    van Veen, B; Bolhuis, G K; Wu, Y S; Zuurman, K; Frijlink, H W

    This paper describes the differences in compaction properties between microcrystalline cellulose (MCC) and microcrystalline cellulose co-processed with colloidal silicon dioxide (SMCC). The different compaction parameters are not only compared for the pure materials, but also for the lubricated

  18. Development of Hydrogenated Microcrystalline Silicon-Germanium Alloys for Improving Long-Wavelength Absorption in Si-Based Thin-Film Solar Cells

    Yen-Tang Huang

    2014-01-01

    Full Text Available Hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H alloys were developed for application in Si-based thin-film solar cells. The effects of the germane concentration (RGeH4 and the hydrogen ratio (RH2 on the μc-Si1-xGex:H alloys and the corresponding single-junction thin-film solar cells were studied. The behaviors of Ge incorporation in a-Si1-xGex:H and μc-Si1-xGex:H were also compared. Similar to a-Si1-xGex:H, the preferential Ge incorporation was observed in μc-Si1-xGex:H. Moreover, a higher RH2 significantly promoted Ge incorporation for a-Si1-xGex:H, while the Ge content was not affected by RH2 in μc-Si1-xGex:H growth. Furthermore, to eliminate the crystallization effect, the 0.9 μm thick absorbers with a similar crystalline volume fraction were applied. With the increasing RGeH4, the accompanied increase in Ge content of μc-Si1-xGex:H narrowed the bandgap and markedly enhanced the long-wavelength absorption. However, the bias-dependent EQE measurement revealed that too much Ge incorporation in absorber deteriorated carrier collection and cell performance. With the optimization of RH2 and RGeH4, the single-junction μc-Si1-xGex:H cell achieved an efficiency of 5.48%, corresponding to the crystalline volume fraction of 50.5% and Ge content of 13.2 at.%. Compared to μc-Si:H cell, the external quantum efficiency at 800 nm had a relative increase by 33.1%.

  19. Development of Tandem Amorphous/Microcrystalline Silicon Thin-Film Large-Area See-Through Color Solar Panels with Reflective Layer and 4-Step Laser Scribing for Building-Integrated Photovoltaic Applications

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film large-area see-through color solar modules were successfully designed and developed for building-integrated photovoltaic applications. Novel and key technologies of reflective layers and 4-step laser scribing were researched, developed, and introduced into the production line to produce solar panels with various colors, such as purple, dark blue, light blue, silver, golden, orange, red wine, and coffee. The highest module power is 105 W and the highest visible light transmittance is near 20%.

  20. Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

    Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

    2000-01-01

    In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

  1. Development of Amorphous/Microcrystalline Silicon Tandem Thin-Film Solar Modules with Low Output Voltage, High Energy Yield, Low Light-Induced Degradation, and High Damp-Heat Reliability

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film solar modules with low output voltage, high energy yield, low light-induced degradation, and high damp-heat reliability were successfully designed and developed. Several key technologies of passivation, transparent-conducting-oxide films, and cell and segment laser scribing were researched, developed, and introduced into the production line to enhance the performance of these low-voltage modules. A 900 kWp photovoltaic system with these low-voltage panels was installed and its performance ratio has been simulated and projected to be 92.1%, which is 20% more than the crystalline silicon and CdTe counterparts.

  2. Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.

    Köhler, Malte; Pomaska, Manuel; Lentz, Florian; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

    2018-05-02

    Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO 2 ) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO 2 /c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO 2 , in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO 2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm 2 were achieved using μc-SiC:H(n)/SiO 2 /c-Si as transparent passivated contacts.

  3. An improved method for preparing silicon carbide

    Baney, R.H.

    1980-01-01

    A desired shape is formed from a polysilane and the shape is heated in an inert atmosphere or under vacuum to 1150 to 1600 0 C until the polysilane is converted to silicon carbide. The polysilane contains from 0 to 60 mole percent of (CH 3 ) 2 Si units and from 40 to 100 mole percent of CH 3 Si units. The remaining bonds on silicon are attached to another silicon atom or to a chlorine or bromine atom, such that the polysilane contains from 10 to 43 weight percent of hydrolyzable chlorine or from 21 to 63 weight percent of hydrolyzable bromine. (author)

  4. Preparation of micro-pored silicone elastomer through radiation crosslinking

    Gao Xiaoling; Gu Mei; Xie Xubing; Huang Wei

    2013-01-01

    The radiation crosslinking was adopted to prepare the micro-pored silicone elastomer, which was performed by vulcanization and foaming respectively. Radiation crosslinking is a new method to prepare micro-pored material with high performance by use of radiation technology. Silicon dioxide was used as filler, and silicone elastomer was vulcanized by electron beams, then the micro-pored material was made by heating method at a high temperature. The effects of absorbed dose and filler content on the performance and morphology were investigated. The structure and distribution of pores were observed by SEM. The results show that the micro-pored silicon elastomer can be prepared successfully by controlling the absorbed dose and filler content. It has a smooth surface similar to a rubber meanwhile the pores are round and unconnected to each other with the minimum size of 14 μm. And the good mechanical performance can be suitable for further uses. (authors)

  5. High coercivity microcrystalline Nd-rich Nd–Fe–Co–Al–B bulk magnets prepared by direct copper mold casting

    Zhao, L.Z.; Hong, Y. [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640 (China); Fang, X.G. [Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510640 (China); Qiu, Z.G.; Zhong, X.C. [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640 (China); Gao, X.S. [Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510640 (China); Liu, Z.W., E-mail: zwliu@scut.edu.cn [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640 (China)

    2016-06-15

    High coercivity Nd{sub 25}Fe{sub 40}Co{sub 20}Al{sub 15−x}B{sub x} (x=7–15) hard magnets were prepared by a simple process of injection casting. Different from many previous investigations on nanocomposite compositions, the magnets in this work contain hard magnetic Nd{sub 2}(FeCoAl){sub 14}B, Nd-rich, and Nd{sub 1+ε}(FeCo){sub 4}B{sub 4} phases. The magnetic properties, phase evolution, and microstructure of the as-cast and annealed magnets were investigated. As the boron content increased from 7 to 11 at%, the intrinsic coercivity H{sub cj} of the as-cast magnet increased from 816 to 1140 kA/m. The magnets annealed at 750 °C have shown more regular and smaller grains than the as-cast alloys, especially for the x=11 alloy. The high intrinsic coercivities for the annealed alloys with x=8~11 result from the presence of small-sized grains in the microstructure. The highest H{sub cj} of 1427 kA/m was obtained for the heat treated alloy with x=10. This work provides an alternative approach for preparing fully dense Nd-rich bulk hard magnets with relatively good properties. - Highlights: • 2 mm hard magnetic Nd{sub 25}Fe{sub 40}Co{sub 20}Al{sub 15−x}B{sub x} rods were prepared by direct casting. • High coercivity of 1.78 T was achieved in x=11 sample after heat treatment. • Small grains are responsible for the significant increase in H{sub C} after annealing. • Nd{sub 2}Fe{sub 14}B grains with two different sizes lead to two-step demagnetization process.

  6. Multiple acquisition of magic angle spinning solid-state NMR experiments using one receiver: Application to microcrystalline and membrane protein preparations

    Gopinath, T.; Veglia, Gianluigi

    2015-04-01

    Solid-state NMR spectroscopy of proteins is a notoriously low-throughput technique. Relatively low-sensitivity and poor resolution of protein samples require long acquisition times for multidimensional NMR experiments. To speed up data acquisition, we developed a family of experiments called Polarization Optimized Experiments (POE), in which we utilized the orphan spin operators that are discarded in classical multidimensional NMR experiments, recovering them to allow simultaneous acquisition of multiple 2D and 3D experiments, all while using conventional probes with spectrometers equipped with one receiver. POE allow the concatenation of multiple 2D or 3D pulse sequences into a single experiment, thus potentially combining all of the aforementioned advances, boosting the capability of ssNMR spectrometers at least two-fold without the addition of any hardware. In this perspective, we describe the first generation of POE, such as dual acquisition MAS (or DUMAS) methods, and then illustrate the evolution of these experiments into MEIOSIS, a method that enables the simultaneous acquisition of multiple 2D and 3D spectra. Using these new pulse schemes for the solid-state NMR investigation of biopolymers makes it possible to obtain sequential resonance assignments, as well as distance restraints, in about half the experimental time. While designed for acquisition of heteronuclei, these new experiments can be easily implemented for proton detection and coupled with other recent advancements, such as dynamic nuclear polarization (DNP), to improve signal to noise. Finally, we illustrate the application of these methods to microcrystalline protein preparations as well as single and multi-span membrane proteins reconstituted in lipid membranes.

  7. Preparation of aluminum nitride-silicon carbide nanocomposite powder by the nitridation of aluminum silicon carbide

    Itatani, K.; Tsukamoto, R.; Delsing, A.C.A.; Hintzen, H.T.J.M.; Okada, I.

    2002-01-01

    Aluminum nitride (AlN)-silicon carbide (SiC) nanocomposite powders were prepared by the nitridation of aluminum-silicon carbide (Al4SiC4) with the specific surface area of 15.5 m2·g-1. The powders nitrided at and above 1400°C for 3 h contained the 2H-phases which consisted of AlN-rich and SiC-rich

  8. Characterization of silicon oxynitride films prepared by the simultaneous implantation of oxygen and nitrogen ions into silicon

    Hezel, R.; Streb, W.

    1985-01-01

    Silicon oxynitride films about 5 nm in thickness were prepared by simultaneously implanting 5 keV oxygen and nitrogen ions into silicon at room temperature up to saturation. These films with concentrations ranging from pure silicon oxide to silicon nitride were characterized using Auger electron spectroscopy, electron energy loss spectroscopy and depth-concentration profiling. The different behaviour of the silicon oxynitride films compared with those of silicon oxide and silicon nitride with regard to thermal stability and hardness against electron and argon ion irradiation is pointed out. (Auth.)

  9. Method for depositing high-quality microcrystalline semiconductor materials

    Guha, Subhendu [Bloomfield Hills, MI; Yang, Chi C [Troy, MI; Yan, Baojie [Rochester Hills, MI

    2011-03-08

    A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

  10. Preparation and characterisation of immobilised humic acid on silicon wafer

    Szabo, Gy.; Guczi, J.; Telegdi, J.; Pashalidis, I.; Szymczak, W.; Buckau, G.

    2005-01-01

    Full text of publication follows: The chemistry of the interactions of radionuclides with humic acid needs to be understood in details so that humate-mediated migration of radionuclides through the environment can be predicted. To achieve such a data in microscopic scale, several detective techniques, such as atomic force microscopy (AFM), chemical force microscopy (CFM), nuclear microprobe analysis (NMA) and X-ray photoelectron spectroscopy (XPS) can be used to measure intermolecular forces and to visualize the surface morphology. The main aim of this work was to provide humic material with specific properties in order to study with different spectroscopic techniques, the complexation behaviour of surface bound humic acid in microscopic scale. Namely, humic acid has been immobilised on silicon wafers in order to mimic surface bound humic substances in natural aquatic systems. In this communication, we present a simple protocol to immobilize humic acid on silicon wafer surface. A tri-functional silane reagent 3-amino-propyl-tri-methoxy-silane (APTES) was used to modify the surface of silicon wafers and appeared to be able to strongly attached soluble humic acid through their carboxylic groups to solid support. Characterisation of the surfaces, after any preparation steps, was done by ATR-FTIR, AFM and TOF-SIMS. These methods have proved that the humic acid forms a relatively homogeneous layer on the wafers. Immobilisation of humic acid on silicon wafer was further proved by binding isotherm of Am/Nd. (authors)

  11. Local photoconductivity of microcrystalline silicon thin films excited by 442 nm HeCd laser measured by conductive atomic force microscopy

    Ledinský, Martin; Fejfar, Antonín; Vetushka, Aliaksi; Stuchlík, Jiří; Kočka, Jan

    2012-01-01

    Roč. 358, č. 17 (2012), s. 2082-2085 ISSN 0022-3093. [International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS) /24./. Nara, 21.08.2011-26.08.2011] R&D Projects: GA MŠk(CZ) LC06040; GA MŠk(CZ) MEB061012; GA AV ČR KAN400100701 Grant - others:7. Framework programme of the European Community(XE) no. 240826 Institutional research plan: CEZ:AV0Z10100521 Keywords : amorphous and nanocrystalline silicon films * atomic force microscopy (AFM) * local photoconductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.597, year: 2012 http://www.sciencedirect.com/science/article/pii/S0022309312000178

  12. Amorphous silicon prepared from silane-hydrogen mixture

    Pietruszko, S.M.

    1982-09-01

    Amorphous silicon films prepared from a d.c. discharge of 10% SiH 4 - 90% H 2 mixture are found to have properties similar to those made from 100% SiH 4 . These films are found to be quite stable against prolonged light exposure. The effect of nitrogen on the properties of these films was investigated. It was found that instead of behaving as a classical donor, nitrogen introduces deep levels in the material. Field effect experiments on a-Si:H films at the bottom (film-substrate interface) and the top (film-vacuum interface) of the film are also reported. (author)

  13. Preparing rare earth-silicon-iron-aluminum alloys

    Marchant, J.D.; Morrice, E.; Herve, B.P.; Wong, M.M.

    1980-01-01

    As part of its mission to assure the maximum recovery and use of the Nation's mineral resources, the Bureau of Mines, investigated an improved procedure for producing rare earth-silicon alloys. For example, a charge consisting of 681 grams of mixed rare-earth oxides, 309 grams of ferrosilicon (75 wt-pct Si), and 182 grams of aluminum metal along with a flux consisting of 681 grams of CaO and 45 grams of MgO was reacted at 1500 0 C in an induction furnace. Good slag-metal separation was achieved. The alloy product contained, in weight-percent, 53 RE, 28 Si, 11 Fe, and 4 Al with a rare earth recovery of 80 pct. In current industrial practice rare earth recoveries are usually about 60 pct in alloy products that contain approximately 30 wt-pct each of rare earths and silicon. Metallurgical evaluations showed the alloys prepared in this investigation to be as effective in controlling the detrimental effect of sulfur in steel and cast iron as the commercial rare earth-silicon-iron alloys presently used in the steel industry

  14. Preparation and characterization of polymer-derived amorphous silicon carbide with silicon-rich stoichiometry

    Masuda, Takashi, E-mail: mtakashi@jaist.ac.jp [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Iwasaka, Akira [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Takagishi, Hideyuki [Faculty of Symbiotic System Science, Fukushima University, 1 Kanayagawa, Fukushima-shi, Fukushima 960-1296 (Japan); Shimoda, Tatsuya [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

    2016-08-01

    Polydihydrosilane with pendant hexyl groups was synthesized to obtain silicon-rich amorphous silicon carbide (a-SiC) films via the solution route. Unlike conventional polymeric precursors, this polymer requires neither catalysts nor oxidation for its synthesis and cross-linkage. Therefore, the polymer provides sufficient purity for the fabrication of semiconducting a-SiC. Here, we investigated the correlation of Si/C stoichiometry between the polymer and the resultant a-SiC film. The structural, optical, and electrical properties of the films with various carbon contents were also explored. Experimental results suggested that the excess carbon that did not participate in Si−C configurations was decomposed and was evaporated during polymer-to-SiC conversion. Consequently, the upper limit of the carbon in resultant a-SiC film was < 50 at.%; namely, the polymer provided silicon-rich a-SiC, whereas the conventionally used polycarbosilane inevitably provides carbon-rich one. These features of this unusual polymer open up a frontier of polymer-derived SiC and solution-processed SiC electronics. - Highlights: • Polymeric precursor solution for silicon carbide (SiC) is synthesized. • Semiconducting amorphous SiC is prepared via solution route. • The excess carbon is decomposed during cross-linking resulting in Si-rich SiC films. • The grown SiC films contain substantial amount of hydrogen atoms as SiH{sub n}/CH{sub n} entities. • Presence of CH{sub n} entities induces dangling bonds, causing poor electrical properties.

  15. Evaluation of microcrystalline cellulose modifed from alpha ...

    Alpha cellulose was obtained from Costus afer and part of it was modified to microcrystalline cellulose (CAMCC). The physicochemical properties of the microcrystalline cellulose were determined and compared with those of commercial microcrystalline cellulose (Avicel 101). The swelling capacity, hydration capacity, loss ...

  16. Structure and properties of microcrystalline chitosan

    Pighinelli, Luciano; Guimaraes, Fernando Machado; Paz, Luan Rios; Zanin, Gabrielle Brehm; Kmiec, Marzena; Tedesco, Felipe Melleu; Reis, Victoria Oliva dos; Silva, Matheus Machado; Becker, Cristiane Miotto; Zehetmeyer, Gislene; Rasia, Gisele

    2016-01-01

    Full text: The microcrystalline chitosan is a modified form of chitosan; it has been elaborated from obtaining method of chitosan salts. It is characterized by special properties of the initial chitosan such as biocompatibility, bioactivity, non-toxic, biodegradability [1]. The objective of this study is to develop a different method to obtain the microcrystalline chitosan and the following characterization of the initial chitosan and MCCh. The material was characterized by FTIR, scanning of electron microscopy, SEM, nuclear magnetic resonance, NMR, and x-ray diffraction. The results indicate that the process to obtain MCCh, did not change the structure of the initial chitosan. The MCCh shows the same functional groups of the initial chitosan. The NMR results shows the acetylated and deacetylated groups. The morphology shows a homogeneous structure of surface. The X-ray diffraction shows the reduction of the crystallinity in the MCCh, indicating a bigger amorphous structure of the MCCh. The chitosan and its derivatives are polymers with excellent properties to be used in regenerative medicine because of ensure efficiency in healing process. This polysaccharide has a great potential to develop a new generation of biomaterials that can be used in regenerative medicine and tissue engineering [2]. References: [1]. LI, Q. et al. Applications and properties of chitosan. In: GOOSEN, M. F. A. (Ed.). Applications of chitin and chitosan. Basel: Technomic, 1997. p. 3-29; [2]. Luciano Pighinelli, Magdalena Kucharska, Dariuz Wawro. Preparation of Microcrystalline chitosan: (MCCh0/tricalcium phosphate complex with Hydroxyapatite in sponge and fibre from for hard tissue regeneration. (author)

  17. Structure and properties of microcrystalline chitosan

    Pighinelli, Luciano; Guimaraes, Fernando Machado; Paz, Luan Rios; Zanin, Gabrielle Brehm; Kmiec, Marzena; Tedesco, Felipe Melleu; Reis, Victoria Oliva dos; Silva, Matheus Machado, E-mail: lpighinelli@hotmail.com [Universidade Luterana, Sao Paulo, SP (Brazil); Becker, Cristiane Miotto; Zehetmeyer, Gislene; Rasia, Gisele [Centro Universitario SENAI CIMATEC, Salvador, BA (Brazil). Instituto de Engenharia de Materiais Polimericos

    2016-07-01

    Full text: The microcrystalline chitosan is a modified form of chitosan; it has been elaborated from obtaining method of chitosan salts. It is characterized by special properties of the initial chitosan such as biocompatibility, bioactivity, non-toxic, biodegradability [1]. The objective of this study is to develop a different method to obtain the microcrystalline chitosan and the following characterization of the initial chitosan and MCCh. The material was characterized by FTIR, scanning of electron microscopy, SEM, nuclear magnetic resonance, NMR, and x-ray diffraction. The results indicate that the process to obtain MCCh, did not change the structure of the initial chitosan. The MCCh shows the same functional groups of the initial chitosan. The NMR results shows the acetylated and deacetylated groups. The morphology shows a homogeneous structure of surface. The X-ray diffraction shows the reduction of the crystallinity in the MCCh, indicating a bigger amorphous structure of the MCCh. The chitosan and its derivatives are polymers with excellent properties to be used in regenerative medicine because of ensure efficiency in healing process. This polysaccharide has a great potential to develop a new generation of biomaterials that can be used in regenerative medicine and tissue engineering [2]. References: [1]. LI, Q. et al. Applications and properties of chitosan. In: GOOSEN, M. F. A. (Ed.). Applications of chitin and chitosan. Basel: Technomic, 1997. p. 3-29; [2]. Luciano Pighinelli, Magdalena Kucharska, Dariuz Wawro. Preparation of Microcrystalline chitosan: (MCCh0/tricalcium phosphate complex with Hydroxyapatite in sponge and fibre from for hard tissue regeneration. (author)

  18. Process Development in the Preparation and Characterization of Silicon Alkoxide From Rice Husk

    Khin San Win; Toe Shein; Nyunt Wynn

    2011-12-01

    The preparation and characterization of silicon alkoxide (silicon isopropoxide) from rice husk char has been studied. In the investigation, four kinds of Myanmar paddies were chemically assayed. Analyses showed the silicon contend varies from 73-92% . Based on the silicon content, the process development in the production of silicon isopropoxide was carried out. In the process development, silicon isopropoxide with a yield of 44.21% was achieved by the direct reaction of isopropanol in situ by silicon tetrachloride, which was directly produced by the chlorination of rice husk char at the high temperature range of 900-1100 C. The novelity of the process was that, silicon isopropoxide was achieved in situ and not by using the old process, where generally isopropanol was reacted with silicon tetrachloride. The physiochemical properties of silicon isopropoxide was confirmed by conventional and modern techniques. In the investigation, the starting materials, silica in the reaction products were characterized, identified and confirmed by modren techniques. Silicon isopropoxide can be a sources of pore silica whereby silicon of 97-99% of purity can be achieved.

  19. Review of porous silicon preparation and its application for lithium-ion battery anodes

    Ge, M; Fang, X; Rong, J; Zhou, C

    2013-01-01

    Silicon is of great interest for use as the anode material in lithium-ion batteries due to its high capacity. However, certain properties of silicon, such as a large volume expansion during the lithiation process and the low diffusion rate of lithium in silicon, result in fast capacity degradation in limited charge/discharge cycles, especially at high current rate. Therefore, the use of silicon in real battery applications is limited. The idea of using porous silicon, to a large extent, addresses the above-mentioned issues simultaneously. In this review, we discuss the merits of using porous silicon for anodes through both theoretical and experimental study. Recent progress in the preparation of porous silicon through the template-assisted approach and the non-template approach have been highlighted. The battery performance in terms of capacity and cyclability of each structure is evaluated. (topical review)

  20. Method for the preparation of n-i-p type radiation detector from silicon

    Keleti, J.; Toeroek, T.; Lukacs, J.; Molnar, I.

    1978-01-01

    The patent describes a procedure for the preparation of n-i-p type silicon radiation detectors. The aim was to provide an adaquate procedure for the production of α, β, γ-detectors from silicon available on the market, either p-type single crystal silicon characterised by its boron level. The procedure and the 9 claims are illustrated by two examples. (Sz.J.)

  1. The preparation method of solid boron solution in silicon carbide in the form of micro powder

    Pampuch, R.; Stobierski, L.; Lis, J.; Bialoskorski, J.; Ermer, E.

    1993-01-01

    The preparation method of solid boron solution in silicon carbide in the form of micro power has been worked out. The method consists in introducing mixture of boron, carbon and silicon and heating in the atmosphere of inert gas to the 1573 K

  2. Supercritical fluid extraction of silicone oil from uranate microspheres prepared by sol-gel process

    Kumar, R.; Venkatakrishnan, R.; Sivaraman, N.; Srinivasan, T.G.; Vasudeva Rao, P.R.

    2005-01-01

    Supercritical fluid extraction of silicone oil from urania microspheres prepared through sol-gel route was investigated. The influence of pressure, temperature, and flow rate on the extraction efficiency was studied. Experimental conditions were optimised for the complete removal of silicone oil from urania microspheres. (author)

  3. Effect of Cu/In molar ratio on the microstructural and optical properties of microcrystalline CuInS2 prepared by solvothermal route

    Das, Kajari; Panda, Subhendu K.; Gorai, Soma; Mishra, Pratima; Chaudhuri, Subhadra

    2008-01-01

    Synthesis and characterization of CuInS 2 powder sample prepared by a simple and convenient solvothermal method is reported. The influence of the variation of Cu/In molar ratio from 0.69 to 1.25 on the particle morphology, crystal structure and optical properties of CuInS 2 samples was studied. The X-ray diffraction studies indicated that the samples were polycrystalline in nature. SEM images of the samples revealed that the copper-rich products were uniform microspheres with smooth surfaces, whereas microspheres formed by network of interconnected flakes were obtained for indium-rich products. The optical band gaps (E g ) of the products decreased from 1.60 to 1.43 eV with variation of Cu/In molar ratio. The variation of the Urbach tail width with Cu/In molar ratio indicated that the density of the defects is much higher for the indium-rich CuInS 2 , which was clearly revealed from Raman measurements

  4. Preparation and Properties of EPDM/Silicone Alloy Using Maleated EPDM-polydimethylsiloxane Compatibilizer

    Kang, Doo Whan; Kim, Bum Jin [Hyperstructured Organic Materials Research Center, Department of Polymer Science and Engineering, Dankook University, Seoul (Korea); Shim, Dae Sup [Korea Electrotechnology Research Institute, Euiwang (Korea)

    2001-05-01

    EPDM used as an electrical insulating material was blended with silicone rubber and compatibilizer to improve weatherability, ozone resistance, and dielectric strength. The compatibilizer was prepared by imidizing maleated EPDM with {alpha},{omega}-aminopropyl polydimethylsiloxane. EPDM/ silicone alloy was prepared by blending EPDM and silicone rubber with weight ratio of 9/1, 7/3, 5/5, 3/7 and 1/9, maleated EPDM-polydimethylsiloxane copolymer, and dicumyl peroxide (DCP). The maximum tensile strength of 0.177 kgf/mm{sup 2}, elongation at break of 257%, and dielectric breakdown voltage 362.25 kV/cm were obtained from the alloy prepared with 9 to 1 weight ration of EPDM/silicone. The compatibility of the alloy was confirmed from the thermal characteristics measured using DMA and DSC. The morphology of the alloys was observed with SEM. 7 refs., 8 figs., 1 tab.

  5. Deposition of thin layers of boron nitrides and hydrogenated microcrystalline silicon assisted by high current direct current arc plasma; Deposition assistee par un plasma a arc a haut courant continu de couches minces de Nitrure de Bore et de Silicium microcristallin hydrogene

    Franz, D. [Ecole Polytechnique Federale de Lausanne, Centre de Recherches en Physique des Plasmas (CRPP), CH-1015 Lausanne (Switzerland)

    1999-09-01

    In the frame of this thesis, a high current direct current arc (HCDCA) used for the industrial deposition of diamond, has been adapted to study the deposition of two types of coatings: a) boron nitride, whose cubic phase is similar to diamond, for tribological applications, b) hydrogenated microcrystalline silicon, for applications in the semiconductor fields (flat panel displays, solar cells,...). For the deposition of these coatings, the substrates were placed in the diffusion region of the arc. The substrate heating is mainly due to atomic species recombining on its surface. The deposition temperature, varying from 300 to 900 {sup o}C according to the films deposited, is determined by the substrate position, the arc power and the injected gas fluxes, without the use of any external heating or cooling system. Measurements performed on the arc plasma show that the electronic temperature is around 2 eV (23'000 K) while the gas temperature is lower than 5500 K. Typical electronic densities are in the range of 10{sup 12}-10{sup 1'}3 cm{sup -3}. For the deposition of boron nitride films, different boron precursors were used and a wide parameter range was investigated. The extreme difficulty of synthesising cubic boron nitride films by chemical vapour deposition (CVD) did not allow to stabilize the cubic phase of boron nitride in HCDCA. Coatings resulted in hexagonal or amorphous boron nitride with a chemical composition close to stoichiometric. The presence of hydrogen leads to the deposition of rough and porous films. Negative biasing of the samples, for positive ion bombardment, is commonly used to stabilize the cubic phase. In HCDCA and in our biasing range, only a densification of the films could be observed. A boron nitride deposition plasma study by infrared absorption spectroscopy in a capacitive radio frequency reactor has demonstrated the usefulness of this diagnostic for the understanding of the various chemical reactions which occur in this kind

  6. Properties of microcrystalline cellulose obtained from coconut ...

    The study revealed that the cellulose material compares favourably with Avicel PH 101 as well as official requirement specified in the British Pharmacopoeia 1993 for microcrystalline cellulose. Keywords: Coconut fruit fibre, microcrystalline cellulose, powder properties. Journal of Pharmacy and Bioresources Vol. 3 (1) 2006: ...

  7. Isolation and characterization of microcrystalline cellulose obtained ...

    In this study, microcrystalline cellulose, coded MCC-PNF, was obtained from palm nut (Elaeis guineensis) fibres. MCC-PNF was examined for its physicochemical and powder properties. The powder properties of MCC-PNF were compared to those of the best commercial microcrystalline cellulose grade, Avicel PH 101.

  8. Some Physical Characteristics of Microcrystalline Cellulose ...

    Purpose: The microcrystalline cellulose is an important ingredient in pharmaceutical, food, cosmetic and other industries. This study aimed at evaluating the physical characteristics of microcrystalline cellulose (CP-MCC), obtained from the raw cotton of Cochlospermum planchonii. Methods: CP-MCC was obtained from the ...

  9. Comparison of silicon nanocrystals prepared by two fundamentally different methods

    Cibulka, Ondřej; Vorkotter, C.; Purkrt, Adam; Holovský, Jakub; Benedikt, J.; Herynková, Kateřina

    2016-01-01

    Roč. 11, Oct (2016), s. 1-7, č. článku 445. ISSN 1556-276X Grant - others:AV ČR(CZ) DAAD-16-18 Program:Bilaterální spolupráce Institutional support: RVO:68378271 Keywords : silicon nanocrystals * electrochemical etching * low-pressure plasma * photoluminescence * size distribution * surface passivation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.833, year: 2016

  10. Review of New Technology for Preparing Crystalline Silicon Solar Cell Materials by Metallurgical Method

    Li, Man; Dai, Yongnian; Ma, Wenhui; Yang, Bin; Chu, Qingmei

    2017-11-01

    The goals of greatly reducing the photovoltaic power cost and making it less than that of thermal power to realize photovoltaic power grid parity without state subsidies are focused on in this paper. The research status, key technologies and development of the new technology for preparing crystalline silicon solar cell materials by metallurgical method at home and abroad are reviewed. The important effects of impurities and defects in crystalline silicon on its properties are analysed. The importance of new technology on reducing production costs and improving its quality to increase the cell conversion efficiency are emphasized. The previous research results show that the raw materials of crystalline silicon are extremely abundant. The product of crystalline silicon can meet the quality requirements of solar cell materials: Si ≥ 6 N, P 1 Ω cm, minority carrier life > 25 μs cell conversion efficiency of about 19.3%, the product costs energy consumption energy consumption, low carbon and sustainable development are prospected.

  11. Visible light activated TiO2/microcrystalline cellulose nanocatalyst to destroy organic contaminants in water.

    Hybrid TiO2/microcrystalline cellulose (MC) nanophotocatalyst was prepared in situ by a facile and simple synthesis utilizing benign precursors such as MC and TiCl4. The as-prepared nanocomposite was characterized by XRD, XPS, BET surface area analyzer, UV–vis DRS and TGA. Surfac...

  12. Preparation and Thermal Characterization of Annealed Gold Coated Porous Silicon

    Afarin Bahrami

    2012-01-01

    Full Text Available Porous silicon (PSi layers were formed on a p-type Si wafer. Six samples were anodised electrically with a 30 mA/cm2 fixed current density for different etching times. The samples were coated with a 50–60 nm gold layer and annealed at different temperatures under Ar flow. The morphology of the layers, before and after annealing, formed by this method was investigated by scanning electron microscopy (SEM. Photoacoustic spectroscopy (PAS measurements were carried out to measure the thermal diffusivity (TD of the PSi and Au/PSi samples. For the Au/PSi samples, the thermal diffusivity was measured before and after annealing to study the effect of annealing. Also to study the aging effect, a comparison was made between freshly annealed samples and samples 30 days after annealing.

  13. Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying

    Joo, Jinmyoung; Defforge, Thomas; Gautier, Gael; Loni, Armando; Kim, Dokyoung; Sailor, Michael J.; Li, Z. Y.; Canham, Leigh T.

    2016-01-01

    The effect of supercritical drying (SCD) on the preparation of porous silicon (pSi) powders has been investigated in terms of photoluminescence (PL) efficiency. Since the pSi contains closely spaced and possibly interconnected Si nanocrystals ( 32% at room temperature) has been achieved, prompting the need for further detailed studies to establish the dominant causes of such an improvement.

  14. Preparation of copper and silicon/copper powders by a gas ...

    Pure and silicon-coated metal copper nano to submicron-sized powders were prepared by gas evaporation and condensation. This powder was synthesized by using an industrial electron accelerator, ELV-6, with Ar as the carrier gas. Vapour from the liquefied metal surface was transferred to the cold zone by the carrier ...

  15. Preparation of silicon carbide nanowires via a rapid heating process

    Li Xintong; Chen Xiaohong; Song Huaihe

    2011-01-01

    Silicon carbide (SiC) nanowires were fabricated in a large quantity by a rapid heating carbothermal reduction of a novel resorcinol-formaldehyde (RF)/SiO 2 hybrid aerogel in this study. SiC nanowires were grown at 1500 deg. C for 2 h in an argon atmosphere without any catalyst via vapor-solid (V-S) process. The β-SiC nanowires were characterized by field-emission scanning electron microscope (FE-SEM), X-ray diffraction (XRD), transmission electron microscope (TEM), high-resolution transmission electron microscope (HRTEM) equipped with energy dispersive X-ray (EDX) facility, Fourier transformed infrared spectroscopy (FTIR), and thermogravimetric analysis (TGA). The analysis results show that the aspect ratio of the SiC nanowires via the rapid heating process is much larger than that of the sample produced via gradual heating process. The SiC nanowires are single crystalline β-SiC phase with diameters of about 20-80 nm and lengths of about several tens of micrometers, growing along the [1 1 1] direction with a fringe spacing of 0.25 nm. The role of the interpenetrating network of RF/SiO 2 hybrid aerogel in the carbothermal reduction was discussed and the possible growth mechanism of the nanowires is analyzed.

  16. Structural and optical properties of surface-hydrogenated silicon nanocrystallites prepared by reactive pulsed laser ablation

    Makino, Toshiharu; Inada, Mitsuru; Umezu, Ikurou; Sugimura, Akira

    2005-01-01

    Pulsed laser ablation (PLA) in an inert background gas is a promising technique for preparing Si nanoparticles. Although an inert gas is appropriate for preparing pure material, a reactive background gas can be used to prepare compound nanoparticles. We performed PLA in hydrogen gas to prepare hydrogenated silicon nanoparticles. The mean diameter of the primary particles measured using transmission electron microscopy was approximately 5 nm. The hydrogen content in the deposits was very high and estimated to be about 20%. The infrared absorption corresponding to Si-H n (n = 1, 2, 3) bonds on the surface were observed at around 2100 cm -1 . The Raman scattering peak corresponding to crystalline Si was observed, and that corresponding to amorphous Si was negligibly small. These results indicate that the Si nanoparticles were not an alloy of Si and hydrogen but Si nanocrystallite (nc-Si) covered by hydrogen or hydrogenated amorphous silicon. This means that PLA in reactive H 2 gas is a promising technique for preparing surface passivated nc-Si. The deposition mechanism and optical properties of the surface passivated silicon nanocrystallites are discussed

  17. Antibody bond to the microcrystalline cellulose in progesterone radioimmunoassay

    Krnavek, B.

    1992-01-01

    A suspension of microcrystalline cellulose with bonded globulin fraction of the polyclonal antibody against progesterone was prepared and applied to the radioimmunoanalysis of progesterone in full milk and in blood serum. The results were compared with those obtained using RETRO-test kits; the comparison gave evidence that the novel technique can fully replace the RETRO-test, the elimination of the separating medium (activated carbon, polyethylene glycol) being an asset. The obtained correlation coefficient and regression equation for a simultaneous determination of 120 samples by the two methods were r = 0.964 and y = 1.113x - 0.939, respectively

  18. Preparation And Characterization Of Silicon Carbide Foam By Using In-Situ Generated Polyurethane Foam

    Shalini Saxena

    2015-08-01

    Full Text Available Abstract The open cell silicon carbide SiC foam was prepared using highly crosslinked hybrid organic- inorganic polymer resin matrix. As inorganic polymer polycarbosilane was taken and organic resin was taken as a mixture of epoxy resin and diisocyanates. The resultant highly crosslinked hybrid resin matrix on heating and subsequently on pyrolysis yielded open cell silicon carbide foam. The hybrid resin matrix was characterized by Fourier transform Infrared Spectroscopy FT-IR and thermal properties i.e. Thermogravimetric analysis TGA amp Differential Scanning Calorimetry DSC were also studied. The morphological studies of silicon carbide ceramic foam were carried out using X-ray Spectroscopy XRD amp Scanning Electron Microscopy SEM.

  19. Gold Nanostructures for Surface-Enhanced Raman Spectroscopy, Prepared by Electrodeposition in Porous Silicon

    Yukio H. Ogata

    2011-04-01

    Full Text Available Electrodeposition of gold into porous silicon was investigated. In the present study, porous silicon with ~100 nm in pore diameter, so-called medium-sized pores, was used as template electrode for gold electrodeposition. The growth behavior of gold deposits was studied by scanning electron microscope observation of the gold deposited porous silicon. Gold nanorod arrays with different rod lengths were prepared, and their surface-enhanced Raman scattering properties were investigated. We found that the absorption peak due to the surface plasmon resonance can be tuned by changing the length of the nanorods. The optimum length of the gold nanorods was ~600 nm for surface-enhanced Raman spectroscopy using a He-Ne laser. The reason why the optimum length of the gold nanorods was 600 nm was discussed by considering the relationship between the absorption peak of surface plasmon resonance and the wavelength of the incident laser for Raman scattering.

  20. Silicon anode prepared by rotary evaporation for lithium ion batteries

    Shin, D H; Cho, G B; Song, M G; Choi, Y J; Gu, H B; Kim, K W

    2007-01-01

    A rotary evaporation process was applied to improve electrical contact between acetylene black (AB) and Si electrode. Morphologies and electrochemical properties of the Si electrode were compared with those of conventionally prepared Si electrode. In the evaporated Si electrode, AB particles consisted of network-like structure surrounding the surface of Si particle, while in the conventional one, AB particles partially stuck on the Si surface. Increasing the current density from 0.1 to 0.5 C, stable cycle behavior with a slight decrease in discharge capacity was found in the evaporated electrode, while unstable cycle behavior with a significantly decreased capacity was observed in the conventional electrode. At high-current density (0.5 C rate), the discharge capacity of the evaporated Si electrode was maintained over 480 mAh g -1 after 100 cycles. The good cycle performance was attributed to the low resistance induced by the improved interfacial contact between AB and Si particles

  1. Stressing effects on the charge trapping of silicon oxynitride prepared by thermal oxidation of LPCVD Si-rich silicon nitride

    Choi, H.Y.; Wong, H.; Filip, V.; Sen, B.; Kok, C.W.; Chan, M.; Poon, M.C.

    2006-01-01

    It was recently found that the silicon oxynitride prepared by oxidation of silicon-rich silicon nitride (SRN) has several important features. The high nitrogen and extremely low hydrogen content of this material allows it to have a high dielectric constant and a low trap density. The present work investigates in further detail the electrical reliability of this kind of gate dielectric films by studying the charge trapping and interface state generation induced by constant current stressing. Capacitance-voltage (C-V) measurements indicate that for oxidation temperatures of 850 and 950 deg. C, the interface trap generation is minimal because of the high nitrogen content at the interface. At a higher oxidation temperature of 1050 deg. C, a large flatband shift is found for constant current stressing. This observation can be explained by the significant reduction of the nitrogen content and the phase separation effect at this temperature as found by X-ray photoelectron spectroscopy study. In addition to the high nitrogen content, the Si atoms at the interface exist in the form of random bonding to oxygen and nitrogen atoms for samples oxidized at 850 and 950 deg. C. This structure reduces the interface bonding constraint and results in the low interface trap density. For heavily oxidized samples the trace amount of interface nitrogen atoms exist in the form of a highly constraint SiN 4 phase and the interface oxynitride layer is a random mixture of SiO 4 and SiN 4 phases, which consequently reduces the reliability against high energy electron stressing

  2. EPR response of sucrose and microcrystalline cellulose to measure high doses of gamma radiation

    Torijano, E.; Cruz, L.; Gutierrez, G.; Azorin, J.; Aguirre, F.; Cruz Z, E.

    2015-10-01

    Solid dosimeters of sucrose and microcrystalline cellulose (Avicel Ph-102) were prepared, following the same process, in order to compare their EPR response against that of the l-alanine dosimeters considered as reference. All lots of dosimeters were irradiated with gamma radiation in Gamma beam irradiator with 8 kGy/h of the Nuclear Sciences Institute of UNAM. Doses ranged from 1 to 10 kGy respectively. We found that both the response of sucrose as microcrystalline cellulose were linear; however, the response intensity was, on average, twenty times more for sucrose. Comparing this against the EPR response of l-alanine in the range of doses, it was found that the response to sucrose is a third part; and microcrystalline cellulose is a sixtieth, approximately. The results agree with those found in the literature for sucrose, leaving open the possibility of investigating other dosage ranges for cellulose. (Author)

  3. Uniform-sized silicone oil microemulsions: preparation, investigation of stability and deposition on hair surface.

    Nazir, Habiba; Lv, Piping; Wang, Lianyan; Lian, Guoping; Zhu, Shiping; Ma, Guanghui

    2011-12-01

    Emulsions are commonly used in foods, pharmaceuticals and home-personal-care products. For emulsion based products, it is highly desirable to control the droplet size distribution to improve storage stability, appearance and in-use property. We report preparation of uniform-sized silicone oil microemulsions with different droplets diameters (1.4-40.0 μm) using SPG membrane emulsification technique. These microemulsions were then added into model shampoos and conditioners to investigate the effects of size, uniformity, and storage stability on silicone oil deposition on hair surface. We observed much improved storage stability of uniform-sized microemulsions when the droplets diameter was ≤22.7 μm. The uniform-sized microemulsion of 40.0 μm was less stable but still more stable than non-uniform sized microemulsions prepared by conventional homogenizer. The results clearly indicated that uniform-sized droplets enhanced the deposition of silicone oil on hair and deposition increased with decreasing droplet size. Hair switches washed with small uniform-sized droplets had lower values of coefficient of friction compared with those washed with larger uniform and non-uniform droplets. Moreover the addition of alginate thickener in the shampoos and conditioners further enhanced the deposition of silicone oil on hair. The good correlation between silicone oil droplets stability, deposition on hair and resultant friction of hair support that droplet size and uniformity are important factors for controlling the stability and deposition property of emulsion based products such as shampoo and conditioner. Copyright © 2011 Elsevier Inc. All rights reserved.

  4. Titanium-silicon films prepared by spin and dip-coating

    Nassar, Eduardo J.; Ciuffi, Katia J.; Goncalves, Rogeria R.; Messaddeq, Younes; Ribeiro, Sidney J.L.

    2003-01-01

    The conditions for the preparation of luminescent materials, consisting of Eu 3+ ions entrapped in a titanium matrix, in the form of a thin film, using the sol-gel process, are described. The films were obtained from sols prepared with TEOS and TEOT, in the presence of acetylacetone as the hydrolysis-retarding agent, using the dip-coating and spin-coating techniques. The influence of these techniques on the films based on titanium and silicon are presented. The Eu 3+ was used as a luminescent probe. The films have been characterized by luminescence, reflection and transmittance. The thickness of the films could be related to the preparation procedure. Transparent thin films have been prepared by dip-coating technique. (author)

  5. Preparation of Mica and Silicon Substrates for DNA Origami Analysis and Experimentation

    Pillers, Michelle A.; Shute, Rebecca; Farchone, Adam; Linder, Keenan P.; Doerfler, Rose; Gavin, Corey; Goss, Valerie; Lieberman, Marya

    2015-01-01

    The designed nature and controlled, one-pot synthesis of DNA origami provides exciting opportunities in many fields, particularly nanoelectronics. Many of these applications require interaction with and adhesion of DNA nanostructures to a substrate. Due to its atomically flat and easily cleaned nature, mica has been the substrate of choice for DNA origami experiments. However, the practical applications of mica are relatively limited compared to those of semiconductor substrates. For this reason, a straightforward, stable, and repeatable process for DNA origami adhesion on derivatized silicon oxide is presented here. To promote the adhesion of DNA nanostructures to silicon oxide surface, a self-assembled monolayer of 3-aminopropyltriethoxysilane (APTES) is deposited from an aqueous solution that is compatible with many photoresists. The substrate must be cleaned of all organic and metal contaminants using Radio Corporation of America (RCA) cleaning processes and the native oxide layer must be etched to ensure a flat, functionalizable surface. Cleanrooms are equipped with facilities for silicon cleaning, however many components of DNA origami buffers and solutions are often not allowed in them due to contamination concerns. This manuscript describes the set-up and protocol for in-lab, small-scale silicon cleaning for researchers who do not have access to a cleanroom or would like to incorporate processes that could cause contamination of a cleanroom CMOS clean bench. Additionally, variables for regulating coverage are discussed and how to recognize and avoid common sample preparation problems is described. PMID:26274888

  6. Adsorption of cationic amylopectin on microcrystalline cellulose.

    Steeg, van de H.G.M.; Keizer, de A.; Cohen Stuart, M.A.; Bijsterbosch, B.H.

    1993-01-01

    The effects of electrolyte concentration and pH on the adsorption of cationic amylopectin on microcrystalline cellulose were investigated. The adsorbed amount in the pseudo-plateau of the isotherm showed a maximum as a function of the electrolyte concentration. We compared the data with a recent

  7. Evaluation of tablet disintegrant properties of microcrystalline ...

    This study was aimed at exploring the application of microcrystalline cellulose from cassava fermentation waste as a disintegrant in the formulation of paracetamol tablets for immediate release. Alkali delignification of the dried cassava fermentation fibres, followed by bleaching and acid depolymerisation was employed in ...

  8. Modification of inkjet printer for polymer sensitive layer preparation on silicon-based gas sensors

    Tianjian Li

    2015-04-01

    Full Text Available Inkjet printing is a versatile, low cost deposition technology with the capabilities for the localized deposition of high precision, patterned deposition in a programmable way, and the parallel deposition of a variety of materials. This paper demonstrates a new method of modifying the consumer inkjet printer to prepare polymer-sensitive layers on silicon wafer for gas sensor applications. A special printing tray for the modified inkjet printer to support a 4-inch silicon wafer is designed. The positioning accuracy of the deposition system is tested, based on the newly modified printer. The experimental data show that the positioning errors in the horizontal direction are negligibly small, while the positioning errors in the vertical direction rise with the increase of the printing distance of the wafer. The method for making suitable ink to be deposited to form the polymer-sensitive layer is also discussed. In the testing, a solution of 0.1 wt% polyvinyl alcohol (PVA was used as ink to prepare a sensitive layer with certain dimensions at a specific location on the surface of the silicon wafer, and the results prove the feasibility of the methods presented in this article.

  9. Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

    Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

    2016-01-01

    Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

  10. Preparation and Reaction Chemistry of Novel Silicon-Substituted 1,3-Dienes

    Partha P. Choudhury

    2015-09-01

    Full Text Available 2-Silicon-substituted 1,3-dienes containing non transferrable groups known to promote transmetallation were prepared by Grignard chemistry and enyne metathesis. These dienes participated in one pot metathesis/Diels-Alder reactions in regio- and diastereoselective fashions. Electron-rich alkenes showed the fastest rates in metathesis reactions, and ethylene, a commonly used metathesis promoter slowed enyne metathesis. 2-Pyridyldimethylsilyl and 2-thienyldimethylsilyl substituted Diels-Alder cycloadducts participated in cross-coupling chemistry and the 2-thienyldimethylsilyl substituted cycloadducts underwent cross-coupling under very mild reaction conditions.

  11. Facile synthesis of TiO2/microcrystalline cellulose nanocomposites: photocatalytically active material under visible light irradiation

    Doped TiO2 nanocomposites were prepared in situ by a facile and simple synthesis utilizing benign and renewable precursors such as microcrystalline cellulose (MC) and TiCl4 through hydrolysis in alkaline medium without the addition of organic solvents. The as-prepared nanocompos...

  12. Microcrystalline identification of selected designer drugs.

    Elie, Leonie; Baron, Mark; Croxton, Ruth; Elie, Mathieu

    2012-01-10

    A microcrystalline test for the detection of 4-methylmethcathinone (mephedrone), benzylpiperazine (BZP) and 5,6-methylenedioxy-2-aminoindane (MDAI) using aqueous solutions of mercury chloride is described. Each of the compounds investigated formed specific drug-reagent crystals within minutes. The uniqueness of the test was confirmed by comparison of the microcrystalline response to that of other psychoactive stimulants and a common cutting agent. The limit of detection and cut-off levels for reference standards were established to 3 g/L and 5 g/L for mephedrone, 0.5 g/L for MDAI and 0.2 g/L and 0.3 g/L for BZP, respectively. Various mixtures of standards of either mephedrone, BZP or MDAI combined with caffeine were investigated for their microcrystalline response. Results showed that simultaneous detection of drug and cutting agent was possible with the concentrations tested but were dependant on the ratio of drug to cutting agent. BZP could be detected alongside caffeine from as low as 20% (v/v), MDAI from 40% (v/v) and mephedrone from 50% (v/v) and higher. Finally, seven samples of online purchased 'legal highs' were analysed using the developed test and the findings were compared to FTIR and GC-MS results. It was shown that 6 out of 7 samples did not contain the advertised active ingredient. Five samples consisted of BZP, caffeine and 1-[3-(trifluoromethyl)phenyl]piperazine (3-TFMPP). The microcrystalline tests carried out on these samples showed positive results for both BZP and caffeine without interference from other substances present. Copyright © 2011 Elsevier Ireland Ltd. All rights reserved.

  13. Highly conducting p-type nanocrystalline silicon thin films preparation without additional hydrogen dilution

    Patra, Chandralina; Das, Debajyoti

    2018-04-01

    Boron doped nanocrystalline silicon thin film has been successfully prepared at a low substrate temperature (250 °C) in planar inductively coupled RF (13.56 MHz) plasma CVD, without any additional hydrogen dilution. The effect of B2H6 flow rate on structural and electrical properties of the films has been studied. The p-type nc-Si:H films prepared at 5 ≤ B2H6 (sccm) ≤ 20 retains considerable amount of nanocrystallites (˜80 %) with high conductivity ˜101 S cm-1 and dominant crystallographic orientation which has been correlated with the associated increased ultra- nanocrystalline component in the network. Such properties together make the material significantly effective for utilization as p-type emitter layer in heterojunction nc-Si solar cells.

  14. Preparation of silicon carbide-supported vanadium oxide and its application of removing NO by ammonia

    Wang, Zi-Bo; Xu, Xu [Yangzhou University, College of Environmental Science and Engineering, Yangzhou, Jiangsu (China); Bai, Shu-Li [Wuyi University, College of Chemical and Environmental Engineering, Jiangmen, Guangdong (China); Guan, Yu-Jiang; Jiang, Sheng-Tao [Taizhou University, Environmental Engineering, Taizhou, Zhejiang (China)

    2017-03-15

    The aim of this work was to study the preparation of SiC-supported V{sub 2}O{sub 5} catalysts and the kinetics on selective catalytic reduction for NO with NH{sub 3} on the catalysts. Using incipient wetness impregnation methods, vanadium oxide was applied to silicon carbide to prepare a SiC-supported vanadium oxide. X-ray photoelectron spectroscopy analysis confirmed that V{sub 2}O{sub 5} existed in the prepared materials. Using the prepared materials as catalysts, selective catalytic reduction for NO by NH{sub 3} has been analyzed, and reaction kinetics on the catalysts was studied at 150-300 C. The obtained results showed that the reduction reaction on the catalysts is close to zero-order kinetics with respect to NH{sub 3}, first-order with respect to NO, and half-order to O{sub 2}. Apparent activation energy for the reduction reaction was found to be 38 kJ mol{sup -1}. The prepared materials are stable and reusable. (orig.)

  15. Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

    Hamadeh, H; Naddaf, M; Jazmati, A

    2008-01-01

    Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

  16. Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

    Hamadeh, H; Naddaf, M; Jazmati, A [Department of Physics, Atomic Energy Commission of Syria, PO Box 6091, Damascus (Syrian Arab Republic)], E-mail: Scientific8@aec.org.sy

    2008-12-21

    Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

  17. Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

    Hamadeh, H.; Naddaf, M.; Jazmati, A.

    2009-01-01

    Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase of its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS. (author)

  18. Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

    Hamadeh, H.; Naddaf, M.; Jazmati, A.

    2008-12-01

    Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

  19. Influence of preparation and storage conditions on photoluminescence of porous silicon powder with embedded Si nanocrystals

    Bychto, Leszek; Balaguer, Maria; Pastor, Ester; Chirvony, Vladimir; Matveeva, Eugenia

    2008-01-01

    The time changes of photoluminescence (PL) characteristics of porous silicon (porSi) powder during storing in different ambients have been reported. A porous silicon material with embedded Si nanocrystals of size of few nanometers was prepared by an electrochemical method from 10 to 20 Ωcm p-type Si wafers, and both constant and pulse current anodization regimes were used. A powder with a submicron average particle size was obtained by simple mechanical lift-off of the porous layer followed by additional manual milling. The air, hexane, and water as storage media were used, and modification by a nonionic surfactant (undecylenic acid) of the porSi surface was applied in the latter case. Dependence of PL characteristics on preparation and storage conditions was then studied. A remarkable blue shift of a position of PL maximum was observed in time for porSi powders in each storage media. In water suspension a many-fold build-up (10-30) of PL intensity in a time scale of few days was accompanied by an observed blue shift. Photoluminescence time behavior of porSi powders was described by a known mechanism of the change of porSi PL from free exciton emission of Si nanocrystals to luminescence of localized oxidized states on the Si nanocrystal surface.

  20. Influence of preparation and storage conditions on photoluminescence of porous silicon powder with embedded Si nanocrystals

    Bychto, Leszek, E-mail: leszek.bychto@tu.koszalin.pl; Balaguer, Maria; Pastor, Ester; Chirvony, Vladimir; Matveeva, Eugenia, E-mail: eumat@upvnet.upv.e [Technical University of Valencia, Nanophotonics Technology Center (Spain)

    2008-12-15

    The time changes of photoluminescence (PL) characteristics of porous silicon (porSi) powder during storing in different ambients have been reported. A porous silicon material with embedded Si nanocrystals of size of few nanometers was prepared by an electrochemical method from 10 to 20 {Omega}cm p-type Si wafers, and both constant and pulse current anodization regimes were used. A powder with a submicron average particle size was obtained by simple mechanical lift-off of the porous layer followed by additional manual milling. The air, hexane, and water as storage media were used, and modification by a nonionic surfactant (undecylenic acid) of the porSi surface was applied in the latter case. Dependence of PL characteristics on preparation and storage conditions was then studied. A remarkable blue shift of a position of PL maximum was observed in time for porSi powders in each storage media. In water suspension a many-fold build-up (10-30) of PL intensity in a time scale of few days was accompanied by an observed blue shift. Photoluminescence time behavior of porSi powders was described by a known mechanism of the change of porSi PL from free exciton emission of Si nanocrystals to luminescence of localized oxidized states on the Si nanocrystal surface.

  1. Influence of preparation and storage conditions on photoluminescence of porous silicon powder with embedded Si nanocrystals

    Bychto, Leszek; Balaguer, Maria; Pastor, Ester; Chirvony, Vladimir; Matveeva, Eugenia

    2008-12-01

    The time changes of photoluminescence (PL) characteristics of porous silicon (porSi) powder during storing in different ambients have been reported. A porous silicon material with embedded Si nanocrystals of size of few nanometers was prepared by an electrochemical method from 10 to 20 Ωcm p-type Si wafers, and both constant and pulse current anodization regimes were used. A powder with a submicron average particle size was obtained by simple mechanical lift-off of the porous layer followed by additional manual milling. The air, hexane, and water as storage media were used, and modification by a nonionic surfactant (undecylenic acid) of the porSi surface was applied in the latter case. Dependence of PL characteristics on preparation and storage conditions was then studied. A remarkable blue shift of a position of PL maximum was observed in time for porSi powders in each storage media. In water suspension a many-fold build-up (10-30) of PL intensity in a time scale of few days was accompanied by an observed blue shift. Photoluminescence time behavior of porSi powders was described by a known mechanism of the change of porSi PL from free exciton emission of Si nanocrystals to luminescence of localized oxidized states on the Si nanocrystal surface.

  2. Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying

    Joo, Jinmyoung [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Biomedical Engineering Research Center, Asan Institute for Life Sciences, Asan Medical Center, University of Ulsan College of Medicine, Seoul 05505 (Korea, Republic of); Defforge, Thomas; Gautier, Gael, E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [Universite Francois Rabelais de Tours, CNRS CEA, INSA-CVL, GREMAN UMR 7347, 37071 Tours Cedex 2 (France); Loni, Armando [pSiMedica Ltd., Malvern Hills Science Park, Geraldine Road, Malvern, Worcestershire WR14 3SZ (United Kingdom); Kim, Dokyoung; Sailor, Michael J., E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Li, Z. Y. [Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom); Canham, Leigh T., E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [pSiMedica Ltd., Malvern Hills Science Park, Geraldine Road, Malvern, Worcestershire WR14 3SZ (United Kingdom); Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom)

    2016-04-11

    The effect of supercritical drying (SCD) on the preparation of porous silicon (pSi) powders has been investigated in terms of photoluminescence (PL) efficiency. Since the pSi contains closely spaced and possibly interconnected Si nanocrystals (<5 nm), pore collapse and morphological changes within the nanocrystalline structure after common drying processes can affect PL efficiency. We report the highly beneficial effects of using SCD for preparation of photoluminescent pSi powders. Significantly higher surface areas and pore volumes have been realized by utilizing SCD (with CO{sub 2} solvent) instead of air-drying. Correspondingly, the pSi powders better retain the porous structure and the nano-sized silicon grains, thus minimizing the formation of non-radiative defects during liquid evaporation (air drying). The SCD process also minimizes capillary-stress induced contact of neighboring nanocrystals, resulting in lower exciton migration levels within the network. A significant enhancement of the PL quantum yield (>32% at room temperature) has been achieved, prompting the need for further detailed studies to establish the dominant causes of such an improvement.

  3. The magnetic properties of powdered and compacted microcrystalline permalloy

    Kollar, P.; Oleksakova, D.; Fuezer, J.; Kovac, J.; Roth, S.; Polanski, K.

    2007-01-01

    The aim of this work is to investigate the magnetic properties of powdered and compacted microcrystalline Ni-Fe (81 wt% of Ni) permalloy. It was found by investigating the influence of mechanical milling on the magnetic properties of powder samples prepared by milling of the ribbon that the alloy remains a solid solution with stable structure during the whole milling process. With decreasing particle size the rotation of magnetization vector gradually becomes dominant magnetization process and thus coercivity increases. After compaction of the powder by uniaxial hot pressing the magnetic contact between powder particles is recreated and for resulting bulk the displacement of the domain walls becomes dominant magnetization process with coercivity of 11 A/m (comparable with the coercivity of conventional permalloy)

  4. Physicochemical Characterization of Microcrystalline Cellulose Extracted from Kenaf Bast

    N. A. Sri Aprilia

    2016-03-01

    Full Text Available Microcrystalline cellulose (MCC was successfully prepared from bleached kenaf bast fiber through hydrochloric acid hydrolysis. The influence of hydrolysis time (1 to 3 h on the MCC physicochemical properties was examined. Scanning electron microscopy (SEM, X-ray diffraction (XRD, particle size analysis, Fourier transform infrared spectroscopy (FT-IR, and thermal gravimetric analysis (TGA were utilized to characterize the isolated MCC. According to FTIR analysis, the chemical composition of MCC was not changed with the reaction time. The reaction times, however, did affect the thermal stability of MCC. The thermal stability decreased linearly with increasing hydrolysis time. The optimum hydrolysis time was determined based on the morphological, structural, and thermal properties of the kenaf bast MCC.

  5. Properties of p-type amorphous silicon carbide window layers prepared using boron trifluoride

    Gandia, J J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gutierrez, M T [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Carabe, J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain)

    1993-03-01

    One set (A) of undoped and three sets (B, C and D) of doped hydrogenated amorphous silicon carbide samples have been made in the framework of a research plan for obtaining high quality p-type window layers by radiofrequency glow discharge of silane-based gas mixtures. The samples of sets A and B were made using different RF-power-density to mass-flow ratios for various methane percentages in the gas mixture. The best carbon incorporation in the amorphous silicon lattice was obtained at the highest RF-power density. The properties of sets C and D, prepared using different RF-power densities and silane and methane proportions have been analysed as functions of the concentration of boron trifluoride with respect to silane. In both cases, the optical gap E[sub G], after a slight initial decrease, remains at a value of approximately 2.1 eV without quenching in the doping ranges covered. The best conductivity obtained is 2x10[sup -7] ([Omega] cm)[sup -1]. IR spectra allow to associate these features with the structural quality of the films. (orig.)

  6. Preparation of electromechanically active silicone composites and some evaluations of their suitability for biomedical applications

    Iacob, Mihail; Bele, Adrian [“Petru Poni” Institute of Macromolecular Chemistry, Aleea Gr. Ghica Voda 41A, Iasi 700487 (Romania); Patras, Xenia [“Apollonia” University, 2 Muzicii Street, 700511 Iasi (Romania); Pasca, Sorin [“Ion Ionescu de la Brad” University of Agricultural Sciences and Veterinary Medicine Iaşi, Aleea Mihail Sadoveanu nr. 3, Iasi 700490 (Romania); Butnaru, Maria [“Gr. T. Popa” University of Medicine and Pharmacy, Faculty of Medical Bioengineering, 16 University Street, 700115 Iasi (Romania); Alexandru, Mihaela [“Petru Poni” Institute of Macromolecular Chemistry, Aleea Gr. Ghica Voda 41A, Iasi 700487 (Romania); Ovezea, Dragos [National Institute for Research and Development in Electrical Engineering ICPE-CA, 313 Splaiul Unirii, Bucharest 030138 (Romania); Cazacu, Maria, E-mail: mcazacu@icmpp.ro [“Petru Poni” Institute of Macromolecular Chemistry, Aleea Gr. Ghica Voda 41A, Iasi 700487 (Romania)

    2014-10-01

    Some films based on electromechanically active polymer composites have been prepared. Polydimethylsiloxane-α,ω-diols (PDMSs) having different molecular masses (Mv = 60 700 and Mv = 44 200) were used as matrix in which two different active fillers were incorporated: titanium dioxide in situ generated from its titanium isopropoxide precursor and silica particles functionalized with polar aminopropyl groups on surface. A reference sample based on simple crosslinked PDMS was also prepared. The composites processed as films were investigated to evaluate their ability to act as efficient electromechanical actuators for potential biomedical application. Thus, the surface morphology of interest for electrodes compliance was analysed by atomic force microscopy. Mechanical and dielectric characteristics were evaluated by tensile tests and dielectric spectroscopy, respectively. Electromechanical actuation responses were measured by interferometry. The biocompatibility of the obtained materials has been verified through tests in vitro and, for valuable films, in vivo. The experimental, clinical and anatomopathological evaluation of the in vivo tested samples did not reveal significant pathological modifications. - Highlights: • Silicone composites differing by the filler and matrix characteristics were prepared. • Stress–strain curves were registered in normal and cyclic modes for composite films. • The dielectric permittivity, dielectric loss, and conductivity were determined. • Electromechanical response of the films was measured at an applied voltage. • Some biocompatibility tests, both in vitro and in vivo, were performed.

  7. Effects of Preparation Conditions on the Yield and Embedding Ratio of Vinyl Silicone Oil Microcapsules

    Aijie MA

    2016-05-01

    Full Text Available Self-healing materials could repair themselves without external influences when they are damaged. In this paper, microcapsules are prepared by in-situ polymerization method with vinyl silicone oil as core material, polyurea formaldehyde (PUF as wall material and polyvinyl alcohol as dispersants. The morphology and structure of the microcapsules are tested with scanning electron microscopy (SEM, polarizing microscope(PM)and laser particle analyzer(LPA. Effect of the reaction temperature, stirring speed and PVA concentration on the yield, embedding ratio, particle size and distribution of the microcapsules are studied. Results show that the microcapsules can be successfully prepared by in situ polymerization method. When the reaction temperature was 60℃, the stirring speed 1000 r/min, dispersant concentration 0.1%, the yield and embedding ratio of the microcapsule are 52.5% and 50.1%. The microcapsules prepared have smooth surface, well dispersibility, narrow particle size distribution and the average particle size is 13 μm.DOI: http://dx.doi.org/10.5755/j01.ms.22.2.13026

  8. Preparation of electromechanically active silicone composites and some evaluations of their suitability for biomedical applications

    Iacob, Mihail; Bele, Adrian; Patras, Xenia; Pasca, Sorin; Butnaru, Maria; Alexandru, Mihaela; Ovezea, Dragos; Cazacu, Maria

    2014-01-01

    Some films based on electromechanically active polymer composites have been prepared. Polydimethylsiloxane-α,ω-diols (PDMSs) having different molecular masses (Mv = 60 700 and Mv = 44 200) were used as matrix in which two different active fillers were incorporated: titanium dioxide in situ generated from its titanium isopropoxide precursor and silica particles functionalized with polar aminopropyl groups on surface. A reference sample based on simple crosslinked PDMS was also prepared. The composites processed as films were investigated to evaluate their ability to act as efficient electromechanical actuators for potential biomedical application. Thus, the surface morphology of interest for electrodes compliance was analysed by atomic force microscopy. Mechanical and dielectric characteristics were evaluated by tensile tests and dielectric spectroscopy, respectively. Electromechanical actuation responses were measured by interferometry. The biocompatibility of the obtained materials has been verified through tests in vitro and, for valuable films, in vivo. The experimental, clinical and anatomopathological evaluation of the in vivo tested samples did not reveal significant pathological modifications. - Highlights: • Silicone composites differing by the filler and matrix characteristics were prepared. • Stress–strain curves were registered in normal and cyclic modes for composite films. • The dielectric permittivity, dielectric loss, and conductivity were determined. • Electromechanical response of the films was measured at an applied voltage. • Some biocompatibility tests, both in vitro and in vivo, were performed

  9. Effect of preparation conditions on the properties of glow-discharge intrinsic amorphous silicon

    Gutierrez, M T; Carabe, J; Gandia, J J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Solonko, A [Inst. of High Temperatures of the USSR (IVTAN), Academy of Sciences, Moscow (USSR)

    1992-04-01

    The influence of the preparation conditions (process pressure, substrate temperature, RF-power density and deposition time/thickness) on the optical and electrical properties of intrinsic hydrogenated amorphous silicon (a-Si:H) has been investigated with the aim of optimising such films to be used as absorbent layers of a-Si:H-based p-i-n solar cells. Highly photosensitive films have been obtained at high growth rates (6.2 A s{sup -1}) in the depletion regime using a high process pressure (1000 mTorr), a moderate substrate temperature (250deg C) and a relatively high RF-power density (35.2 mW cm{sup -2}). These films have excellent properties for the application in question. (orig.).

  10. Direct compression properties of microcrystalline cellulose and its ...

    The influence of silicified microcrystalline cellulose (SMCC) on the flow, compaction and tableting properties of metronidazole powder was investigated. The study compared medium grades of both SMCC and standard microcrystalline cellulose (MCC) as direct compressible excipients. The bulk densities, Hausner quotient ...

  11. Preparation and Characterization of Silicone Liquid Core/Polymer Shell Microcapsules via Internal Phase Separation

    Gonzalez, Lidia; Kostrzewska, Malgorzata; Ma, Baoguang

    2014-01-01

    Microcapsules with a silicone liquid core surrounded by a polymeric shell were synthesisedthrough the controlled phase separation. The dispersed silicone phase consisted of the shellpolymer PMMA, a good solvent for the PMMA (dichloromethane, DCM) and a poor solvent(methylhydrosiloxane dimethylsil......Microcapsules with a silicone liquid core surrounded by a polymeric shell were synthesisedthrough the controlled phase separation. The dispersed silicone phase consisted of the shellpolymer PMMA, a good solvent for the PMMA (dichloromethane, DCM) and a poor solvent...

  12. Iron oxide shell coating on nano silicon prepared from the sand for lithium-ion battery application

    Furquan, Mohammad; Vijayalakshmi, S.; Mitra, Sagar

    2018-05-01

    Elemental silicon, due to its high specific capacity (4200 mAh g-1) and non-toxicity is expected to be an attractive anode material for Li-ion battery. But its huge expansion volume (> 300 %) during charging of battery, leads to pulverization and cracking in the silicon particles and causes sudden failure of the Li-ion battery. In this work, we have designed yolk-shell type morphology of silicon, prepared from carbon coated silicon nanoparticles soaked in aqueous solution of ferric nitrate and potassium hydroxide. The soaked silicon particles were dried and finally calcined at 800 °C for 30 minutes. The product obtained is deprived of carbon and has a kind of yolk-shell morphology of nano silicon with iron oxide coating (Si@Iron oxide). This material has been tested for half-cell lithium-ion battery configuration. The discharge capacity is found to be ≈ 600 mAh g-1 at a current rate of 1.0 A g-1 for 200 cycles. It has shown a stable performance as anode for Li-ion battery application.

  13. Preparing magnetic yttrium iron garnet nanodot arrays by ultrathin anodic alumina template on silicon substrate

    Zheng, Hui; Han, Mangui, E-mail: han-mangui@yahoo.com; Deng, Longjiang [National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zheng, Liang; Zheng, Peng; Qin, Huibin [Institute of Electron Device and Application, Hangzhou Dianzi University, Hangzhou 310008 (China); Wu, Qiong [Magnetism Key Laboratory of Zhejiang Province, China Jiliang University, Hangzhou 310018 (China)

    2015-08-10

    Ultrahigh density periodically ordered magnetic yttrium iron garnet (Y{sub 3}Fe{sub 5}O{sub 12}, YIG) nanodot arrays have been prepared by pulsed laser deposition through an ultrathin alumina mask (UTAM). UTAM having periodically ordered circularly shaped holes with 350 nm in diameter, 450 nm in inter-pore distance, and 700 nm in height has been prepared on silicon substrate. Furthermore, the microstructure and magnetic properties of YIG nanodot arrays have been characterized. Nanodot arrays with a sharp distribution in diameter centered at 340 nm with standard deviation of 10 nm have been fabricated. Moreover, typical hysteresis loops and ferromagnetic resonance spectra in in-plane and out-of-plane revealed that this unique structure greatly influences the magnetics properties of YIG. First, coercivity of YIG nanodot arrays in in-plane was increased about from 15 Oe of YIG films to 500 Oe. Then, the degree of uniformity about nanodot height decided that two or more resonance peaks in out-of-plane were detected in the spectra. The peak-to-peak linewidth values were about 94 Oe and 40 Oe in the parallel and perpendicular directions, respectively, which indicated that the values were larger by the two-magnon scattering. Consequently, this pattering method creates opportunities for studying physics in oxide nanomagnets and may be applied in spin-wave devices.

  14. Preparation of micro-porous bioceramic containing silicon-substituted hydroxyapatite and beta-tricalcium phosphate.

    Fuh, Lih-Jyh; Huang, Ya-Jing; Chen, Wen-Cheng; Lin, Dan-Jae

    2017-06-01

    Dimensional instability caused by sintering shrinkage is an inevitable drawback for conventional processing of hydroxyapatite (HA). A new preparation method for biphasic calcium phosphates was developed to increase micro pores and biodegradation without significant dimensional change. Powder pressed HA discs, under 100MPa, were immersed in a colloidal mixture of tetraethoxysilane (TEOS) and ammonium hydroxide for 10min, followed by drying, and then were sintered at 900°C, 1050°C, and 1200°C, respectively. Comparing with pure HA discs, the newly prepared product sintered up to 1200°C contained silicon substituted HA, beta-tricalcium phosphate, and calcium silicate with better micro-porosity, high specific surface area, less sintering shrinkage and the strength maintained. The cytocompatibility test demonstrated a better viability for D1 mice stem cells cultured on TEOS treated HA for 14days compared to the pure HA. This simple TEOS sol-gel pretreatment has the potential to be applied to any existing manufacturing process of HA scaffold for better control of sintering shrinkage, create micropores, and increase biodegradation. Copyright © 2017 Elsevier B.V. All rights reserved.

  15. FTIR spectroscopy and X-ray powder diffraction characterization of microcrystalline cellulose obtained from alfa fibers

    Trache D.

    2013-07-01

    Full Text Available Many cereal straws have been used as raw materials for the preparation of microcrystalline cellulose (MCC. These raw materials were gradually replaced with wood products; nevertheless about 10% of the world overall pulp production is obtained from non-wood raw material. The main interest in pulp made from straw is that it provides excellent fibres for different industries with special properties, and that it is the major available source of fibrous raw material in some geographical areas. The aim of the present work was to characterize microcrystalline cellulose prepared from alfa fibers using the hydrolysis process. The products obtained are characterized with FTIR spectroscopy and X-ray powder diffraction. As a result, FTIR spectroscopy is an appropriate technique for studying changes occurred by any chemical treatment. The spectrum of alfa grass stems shows the presence of lignin and hemicelluloses. However, the cellulose spectrum indicates that the extraction of lignin and hemicellulose was effective. The X-ray analysis indicates that the microcrystalline cellulose is more crystalline than the source material.

  16. The performance of silicon solar cells prepared by screen-printing technique

    Mursyidah; Mohamed Yahaya; Muhammad Mohd Salleh

    2000-01-01

    Screen-printing technique is known to produce low cost solar cells. A study has been done to prepare silicon solar cells of n + -p and n + -p-p + structures. The p-type silicon wafers were used as substrates. The phosphorous layer was deposited on top of the substrate using the screen-printing technique. The wafer was then annealed at temperature 1000 degree C for 10 minutes, so that phosphorous atoms are thermally diffused into the wafer to form an n + -p junction. Meanwhile the boron film was deposited at the back surface of the substrate and annealed at temperature 900 degree C for 10 minutes to form a p + layer in the n + -p-p + device. The back and front metal contacts were made using screen-printing technique. The performance of the devices was evaluated from I-V curves measured in the dark and under illumination. It was found that the n + -p-p + device with short circuit current, I SC = 32 mA, open circuit voltage, V OC = 0.46 volt, fill factor, FF=0.63 and efficiency, η = 2.3%, was better than that of the n + -p device. The performance of the n + -p-p + device was successfully improved by depositing titanium dioxide on top of the device as anti-reflection coating using the screen-printing technique. The improved performance was I SC = 38 mA, V OC = 0.48 volt, FF = 0.67 and η = 3. 1%. (Author)

  17. Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

    Stuckelberger, J.; Nogay, G.; Wyss, P.; Jeangros, Q.; Allebe, Ch.; Debrot, F.; Niquille, X.; Ledinský, Martin; Fejfar, Antonín; Despeisse, M.; Haug, F.J.; Löper, P.; Ballif, C.

    2016-01-01

    Roč. 158, Dec (2016), s. 2-10 ISSN 0927-0248 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : surface passivation * passivating contact * nanostructure * silicon oxide * nanocrystalline * microcrystalline * poly-silicon * crystallization * Raman * transmission line measurement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.784, year: 2016

  18. Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells

    Sritharathikhun, Jaran; Krajangsang, Taweewat; Moollakorn, Apichan; Inthisang, Sorapong; Limmanee, Amornrat; Hongsingtong, Aswin; Boriraksantikul, Nattaphong; Taratiwat, Tianchai; Akarapanjavit, Nirod; Sriprapha, Kobsak

    2014-01-01

    This paper reports the preparation of wide gap p-type hydrogenated microcrystalline silicon oxide (p-μc-SiO:H) films using a 40 MHz very high frequency plasma enhanced chemical vapor deposition technique. The reported work focused on the effects of the CO2/SiH4 ratio on the properties of p-μc-SiO:H films and the effectiveness of the films as an emitter layer of crystalline silicon heterojunction (c-Si-HJ) solar cells. A p-μc-SiO:H film with a wide optical band gap (E04), 2.1 eV, can be obtain...

  19. Properties of amorphous and microcrystalline superconductors

    Johnson, W.L.; Poon, S.J.

    1975-01-01

    Results of x-ray diffraction, electrical resistivity, critical field(H/sub c2/) and transport measurements are presented and discussed for bulk amorphous and microcrystalline transition metal alloys (Au--La, Nb--Rh, Nb--Ni--Rh, and Pd--Zr) obtained by liquid quenching. The transition temperature of the alloys is in the range 1.5 to 4.7 0 K. The J/sub c/--H/sub c2/--T/sub c/ relations are rather simple for this class of material and are compared with the theories of type II superconductors. The high resistance of bulk metallic glass to radiation damage might render them suitable for magnetic field applications in high radiation environments

  20. Preparation of Silicon by Calcium Reduction of Purified Rice Husk Ash

    Swe Zin Tun

    2011-12-01

    This research has studied on the possibility of production and preparation of silicon powder from rice husk ash (RHA) as raw material. RHA from gasifier, a waste product of the rice mill is rich in silica which contains 90.43% of silica. RHAs were purified by precipitation method using 1.5N, 2N, 2.5N and 3N of sodium hydroxide solution and 4.5N, 5N, 5.5N and 6.5N of sulphuric acid solution. The highest yield percent of silica was given by using 2.5N sodium hydroxide solution and 5N sulphuric acid solution X-ray fluoresence (XRF), X-rays diffraction (HRD) and Fourier transform infrared (FTRI) spectra were applied for determination of mineral content and chemical bonding in extracted silica and rice husk ash. Metallothermic reduction of purified extracted silica with calcium was investigated within the temperacture range of 700-900 C. The reduction product was characterized by XRD, XRF and scanning electron microcopy (SEM). The effect of temperature and reaction time in which reduction process was studied in this research.

  1. Calcium phosphate/porous silicon biocomposites prepared by cyclic deposition methods: Spin coating vs electrochemical activation

    Hernandez-Montelongo, J., E-mail: jacobo.hernandez@uam.es [Departamento de Física Aplicada, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Gallach, D.; Naveas, N.; Torres-Costa, V. [Departamento de Física Aplicada, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Climent-Font, A. [Departamento de Física Aplicada, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Centro de Microanálisis de Materiales (CMAM), Universidad Autónoma de Madrid, Madrid 28049 (Spain); García-Ruiz, J.P. [Departamento de Biología Molecular, Universidad Autónoma de Madrid, Cantoblanco, Madrid 28049 (Spain); Manso-Silvan, M. [Departamento de Física Aplicada, Universidad Autónoma de Madrid, 28049 Madrid (Spain)

    2014-01-01

    Porous silicon (PSi) provides an excellent platform for bioengineering applications due to its biocompatibility, biodegradability, and bioresorbability. However, to promote its application as bone engineering scaffold, deposition of calcium phosphate (CaP) ceramics in its hydroxyapatite (HAP) phase is in progress. In that sense, this work focuses on the synthesis of CaP/PSi composites by means of two different techniques for CaP deposition on PSi: Cyclic Spin Coating (CSC) and Cyclic Electrochemical Activation (CEA). Both techniques CSC and CEA consisted on alternate Ca and P deposition steps on PSi. Each technique produced specific morphologies and CaP phases using the same independent Ca and P stem-solutions at neutral pH and at room temperature. The brushite (BRU) phase was favored with the CSC technique and the hydroxyapatite (HAP) phase was better synthesized using the CEA technique. Analyses by elastic backscattering spectroscopy (EBS) on CaP/PSi structures synthesized by CEA supported that, by controlling the CEA parameters, an HAP coating with the required Ca/P atomic ratio of 1.67 can be promoted. Biocompatibility was evaluated by bone-derived progenitor cells, which grew onto CaP/PSi prepared by CSC technique with a long-shaped actin cytoskeleton. The density of adhered cells was higher on CaP/PSi prepared by CEA, where cells presented a normal morphological appearance and active mitosis. These results can be used for the design and optimization of CaP/PSi composites with enhanced biocompatibility for bone-tissue engineering. - Highlights: • Proposed cyclic methods produce specific morphologies and CaP phases in biocomposites. • The brushite phase is favored in the biocomposite produced by Cyclic Spin Coating. • The hydroxyapatite phase is favored in the biocomposite produced by Cyclic Electrochemical Activation. • The Ca/P atomic ratio of hydroxyapatite was validated by elastic backscattering spectroscopy. • Cells grown showed morphological and

  2. Calcium phosphate/porous silicon biocomposites prepared by cyclic deposition methods: Spin coating vs electrochemical activation

    Hernandez-Montelongo, J.; Gallach, D.; Naveas, N.; Torres-Costa, V.; Climent-Font, A.; García-Ruiz, J.P.; Manso-Silvan, M.

    2014-01-01

    Porous silicon (PSi) provides an excellent platform for bioengineering applications due to its biocompatibility, biodegradability, and bioresorbability. However, to promote its application as bone engineering scaffold, deposition of calcium phosphate (CaP) ceramics in its hydroxyapatite (HAP) phase is in progress. In that sense, this work focuses on the synthesis of CaP/PSi composites by means of two different techniques for CaP deposition on PSi: Cyclic Spin Coating (CSC) and Cyclic Electrochemical Activation (CEA). Both techniques CSC and CEA consisted on alternate Ca and P deposition steps on PSi. Each technique produced specific morphologies and CaP phases using the same independent Ca and P stem-solutions at neutral pH and at room temperature. The brushite (BRU) phase was favored with the CSC technique and the hydroxyapatite (HAP) phase was better synthesized using the CEA technique. Analyses by elastic backscattering spectroscopy (EBS) on CaP/PSi structures synthesized by CEA supported that, by controlling the CEA parameters, an HAP coating with the required Ca/P atomic ratio of 1.67 can be promoted. Biocompatibility was evaluated by bone-derived progenitor cells, which grew onto CaP/PSi prepared by CSC technique with a long-shaped actin cytoskeleton. The density of adhered cells was higher on CaP/PSi prepared by CEA, where cells presented a normal morphological appearance and active mitosis. These results can be used for the design and optimization of CaP/PSi composites with enhanced biocompatibility for bone-tissue engineering. - Highlights: • Proposed cyclic methods produce specific morphologies and CaP phases in biocomposites. • The brushite phase is favored in the biocomposite produced by Cyclic Spin Coating. • The hydroxyapatite phase is favored in the biocomposite produced by Cyclic Electrochemical Activation. • The Ca/P atomic ratio of hydroxyapatite was validated by elastic backscattering spectroscopy. • Cells grown showed morphological and

  3. Isolation and characterization of microcrystalline cellulose from roselle fibers.

    Kian, Lau Kia; Jawaid, Mohammad; Ariffin, Hidayah; Alothman, Othman Y

    2017-10-01

    In this study, microcrystalline cellulose (MCC) was extracted from roselle fiber through acid hydrolysis treatment and its properties were compared with those of commercially available MCC. The physicochemical and morphological characteristics, elemental composition, size distribution, crystallinity and thermal properties of the obtained MCC were analyzed in this work. Fourier transform infrared spectroscopy (FTIR) analysis provided clear evidence that the characteristic peak of lignin was absent in the spectrum of the MCC prepared from roselle fiber. Rough surface and slight aggregation of MCC were observed by scanning electron microscopy (SEM). Energy dispersive X-ray (EDX) analysis showed that pure MCC with small quantities of residues and impurities was obtained, with a similar elemental composition to that of commercial MCC. A mean diameter of approximately 44.28μm was measured for MCC by using a particle size analyzer (PSA). X-ray diffraction (XRD) showed the crystallinity increased from 63% in roselle pulp to 78% in roselle MCC, the latter having a slightly higher crystallinity than that of commercial MCC (74%). TGA and DSC results indicated that the roselle MCC had better thermal stability than the roselle pulp, whereas it had poorer thermal stability in comparison with commercial MCC. Thus, the isolated MCC from roselle fibers will be going to use as reinforcing element in green composites and may be a precursor for future roselle derived nanocellulose, and thus a promising subject in nanocomposite research. Copyright © 2017 Elsevier B.V. All rights reserved.

  4. Physical and structural properties of polyaniline/microcrystalline cellulose nanocomposite

    Abdi, Mahnaz M.; Liyana, Rawaida; Tahir, Paridah Md; Heng, Lee Yook; Sulaiman, Yusran; Waheeda, Nur Farhana; Hassan, Nabihah Abu

    2017-12-01

    A composite of Polyaniline/Microcrystalline Cellulose (PAni/MCC) was prepared via a chemical polymerization method in the presence of ammonium persulfate (NH4)2S2O8 as oxidant and cetyltrimethylammonium bromide (CTAB) as a cationic surfactant. The results of FESEM showed that the morphology of nanocomposite depends on the monomer concentration. Wire-like and porous nanostructure was observed for PAni/MCC/CTAB composite that could be suitable for enzyme immobilization and sensor applications. The electrochemical properties of the composites were studied using Cyclic Voltammetry (CV) and it was shown that PAni/MCC/CTAB composite generated a higher current response compared to the pure PAni. The synergy effect of MCC and CTAB on the physical and electrochemical properties of composite resulted in higher electron transferring in PAni/MCC/CTAB. The presence of significant peaks of PAni and MCC in FT-IR spectrum of nanocomposite indicating polymerization of aniline on the surface of MCC. Characteristic peaks of crystalline cellulose were observed at 22.8 and 14.7 2theta in XRD pattern.

  5. Characterization of Polylactic Acid/ Microcrystalline Cellulose/ Montmorillonite Hybrid Composites

    Reza Arjmandi; Azman Hassan; Haafiz, M.K.M.; Zainoha Zakaria; Inuwa, I.M.

    2014-01-01

    The objective of this study is to investigate the effect of montmorillonite (MMT)/ microcrystalline cellulose (MCC) hybrid fillers on mechanical properties and morphological characteristics of polylactic acid (PLA) composites. PLA/ MMT nano composites and PLA/ MMT/ MCC hybrid composites were prepared by solution casting method. Morphology and tensile properties of PLA composites were investigated using Field emission scanning electron microscopy and Instron tensile testing machine. The maximum tensile strength of PLA/ MMT nano composites was obtained with 5 phr contents of MMT, which corresponding to 30.75 MPa. Based on optimized formulation of PLA/ MMT nano composites (5 phr MMT contents), various amounts of MCC (0 to 7 phr) were added into optimum formulation of PLA/ MMT in order to produce PLA/ MMT/ MCC hybrid composites. Fourier transform infrared spectroscopy revealed some level of interaction between PLA and both MMT and MCC in the hybrid composites. However, the percent elongation at break of the hybrid composites was generally higher than PLA/ MMT nano composites. Additionally, Young's modulus of the PLA/ MMT/ MCC hybrid composites increased gradually with increasing of MCC contents and was higher than PLA/ MMT at all compositions. The present results are the first among a series of experiments that have been designed in order to probe the effect of MMT and MCC in the PLA. (author)

  6. Microcrystalline thin-film solar cell deposition on moving substrates using a linear VHF-PECVD reactor and a cross-flow geometry

    Flikweert, A J; Zimmermann, T; Merdzhanova, T; Weigand, D; Appenzeller, W; Gordijn, A

    2012-01-01

    A concept for high-rate plasma deposition (PECVD) of hydrogenated microcrystalline silicon on moving substrates (dynamic deposition) is developed and evaluated. The chamber allows for substrates up to a size of 40 × 40 cm 2 . The deposition plasma is sustained between linear VHF electrodes (60 MHz) and a moving substrate. Due to the gas flow geometry and the high degree of source gas depletion, from the carrier's point of view the silane concentration varies when passing the electrodes. This is known to lead to different growth conditions which can induce transitions from microcrystalline to amorphous growth. The effect of different silane concentrations is simulated at a standard RF showerhead electrode by intentionally varying the silane concentration during deposition in static mode. This variation may decrease the layer quality of microcrystalline silicon, due to a shift of the crystallinity away from the optimum. However, adapting the input silane concentration, state-of-the-art solar cells are obtained. Microcrystalline cells (ZnO : Al/Ag back contacts) produced by the linear VHF plasma sources show an efficiency of 7.9% and 6.6% for depositions in static and dynamic mode, respectively. (paper)

  7. Water-in-oil Pickering emulsions stabilized by stearoylated microcrystalline cellulose.

    Pang, Bo; Liu, Huan; Liu, Peiwen; Peng, Xinwen; Zhang, Kai

    2018-03-01

    Hydrophobic particles with static water contact angles larger than 90° are more like to stabilize W/O Pickering emulsions. In particular, high internal phase Pickering emulsions (HIPEs) are of great interest for diverse applications. However, W/O HIPEs have rarely been realized using sustainable biopolymers. Herein, we used stearoylated microcrystalline cellulose (SMCC) to stabilize W/O Pickering emulsions and especially, W/O HIPEs. Moreover, these W/O HIPEs can be further used as platforms for the preparation of porous materials, such as porous foams. Stearoylated microcrystalline cellulose (SMCC) was prepared by modifying MCC with stearoyl chloride under heterogeneous conditions. Using SMCC as emulsifiers, W/O medium and high internal phase Pickering emulsions (MIPEs and HIPEs) with various organic solvents as continuous phases were prepared using one-step and two-step methods, respectively. Polystyrene (PS) foams were prepared after polymerization of oil phase using HIPEs as templates and their oil/water separation capacity were studied. SMCC could efficiently stabilize W/O Pickering emulsions and HIPEs could only be prepared via the two-step method. The internal phase volume fraction of the SMCC-stabilized HIPEs reached as high as 89%. Diverse internal phase volume fractions led to distinct inner structures of foams with closed or open cells. These macroporous polystyrene (PS) foams demonstrated great potential for the effective absorption of organic solvents from underwater. Copyright © 2017 Elsevier Inc. All rights reserved.

  8. Nitric oxide releasing silicone rubbers with improved blood compatibility: preparation, characterization, and in vivo evaluation.

    Zhang, Huiping; Annich, Gail M; Miskulin, Judiann; Osterholzer, Kathryn; Merz, Scott I; Bartlett, Robert H; Meyerhoff, Mark E

    2002-03-01

    Nitric oxide (NO) releasing silicone rubbers (SR) are prepared via a three-step reaction scheme. A diamino triaminoalkyltrimethoxysilane crosslinker is used to vulcanize hydroxyl terminated polydimethylsiloxane (PDMS) in the presence of ambient moisture and a dibutyltin dilaurate catalyst so that the respective diamine triamine groups are covalently linked to the cured SR structure. These amine sites are then diazeniumdiolated, in situ, when the cured SR is reacted with NO at elevated pressure (80 psi). Although nitrite species are also formed during the NO addition reaction, in most cases the diazeniumdiolated polymer is the major product within the final SR matrix. Temperature appears to be the major driving force for the dissociation of the attached diazeniumdiolate moieties, whereas the presence of bulk water bathing the SR materials has only minimal effect on the observed NO release rate owing to the low water uptake of the SR matrices. The resulting SR films/coatings release NO at ambient or physiological temperature for up to 20 d with average fluxes of at least 4 x 10(10) mol x cm(-2) x min(-1) (coating thickness > or = 600 microm) over first 4 h, comparable to the NO fluxes observed from stimulated human endothelial cells. The NO loading and concomitant NO release flux of the SR material are readily adjustable by altering the diamine triamine loading and film/coating thickness. The new NO releasing SR materials are shown to exhibit improved thromboresistance in vivo, as demonstrated via reduced platelet activation on the surface of these polymers when used to coat the inner walls of SR tubings employed for extracorporeal circulation in a rabbit model.

  9. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

    McKee, Rodney A.; Walker, Frederick J.

    1993-01-01

    A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

  10. Cat-CVD-prepared oxygen-rich μc-Si:H for wide-bandgap material

    Matsumoto, Yasuhiro; Ortega, Mauricio; Peza, Juan-Manuel; Reyes, Mario-Alfredo; Escobosa, Arturo

    2005-01-01

    Microcrystalline phase-involved oxygen-rich a-Si:H (hydrogenated amorphous silicon) films have been obtained using catalytic chemical vapor deposition (Cat-CVD) process. Pure SiH 4 (silane), H 2 (hydrogen), and O 2 (oxygen) gases were introduced in the chamber by maintaining a pressure of 0.1 Torr. A tungsten catalyzer was fixed at temperatures of 1750 and 1950 deg. C for film deposition on glass and crystalline silicon substrates at 200 deg. C. As revealed from X-ray diffraction spectra, the microcrystalline phase appears for oxygen-rich a-Si:H samples deposited at a catalyzer temperature of 1950 deg. C. However, this microcrystalline phase tends to disappear for further oxygen incorporation. The oxygen content in the deposited films was corroborated by FTIR analysis revealing Si-O-Si bonds and typical Si-H bonding structures. The optical bandgap of the sample increases from 2.0 to 2.7 eV with oxygen gas flow and oxygen incorporation to the deposited films. In the present thin film deposition conditions, no strong tungsten filament degradation was observed after a number of sample preparations

  11. Preparation of fullerene/glass composites

    Mattes, Benjamin R.; McBranch, Duncan W.; Robinson, Jeanne M.; Koskelo, Aaron C.; Love, Steven P.

    1995-01-01

    Synthesis of fullerene/glass composites. A direct method for preparing solid solutions of C.sub.60 in silicon dioxide (SiO.sub.2) glass matrices by means of sol-gel chemistry is described. In order to produce highly concentrated fullerene-sol-gel-composites it is necessary to increase the solubility of these "guests" in a delivery solvent which is compatible with the starter sol (receiving solvent). Sonication results in aggregate disruption by treatment with high frequency sound waves, thereby accelerating the rate of hydrolysis of the alkoxide precursor, and the solution process for the C.sub.60. Depending upon the preparative procedure, C.sub.60 dispersed within the glass matrix as microcrystalline domains, or dispersed as true molecular solutions of C.sub.60 in a solid glass matrix, is generated by the present method.

  12. Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

    Duraia, El-Shazly M.; Mansurov, Z.A.; Tokmolden, S.; Beall, Gary W.

    2010-01-01

    In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm -1 and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

  13. Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

    Duraia, El-Shazly M., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansurov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Beall, Gary W. [Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States)

    2010-02-15

    In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm{sup -1} and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

  14. Preparation and characterization of flake graphite/silicon/carbon spherical composite as anode materials for lithium-ion batteries

    Lai Jun; Guo Huajun; Wang Zhixing; Li Xinhai; Zhang Xiaoping; Wu Feixiang; Yue Peng

    2012-01-01

    Highlights: ► Flake graphite/silicon/carbon composite is synthesized via spray drying. ► Flake graphite of ∼0.5 μm and glucose are used to prepare the composite. ► The as-prepared composite shows spherical and porous appearance. ► The composite shows nearly the same cycleability as commercial graphite in 20 cycles. ► The composite shows a reversible capacity of 552 mAh/g at the 20th cycle. - Abstract: Using nano-Si, glucose and flake graphite of ∼0.5 μm as raw materials, flake graphite/silicon/carbon composite is successfully synthesized via spray drying and subsequent pyrolysis. The samples are characterized by XRD, SEM, TEM and electrochemical measurements. The composite is composed of flake graphite, nano-Si and amorphous glucose-pyrolyzed carbon and presents good spherical appearance. Some micron pores arising from the decomposition of glucose exist on the surface of the composite particles. The composite has a high reversible capacity of 602.7 mAh/g with an initial coulombic efficiency of 69.71%, and shows nearly the same cycleability as the commercial graphite in 20 cycles. Both the glucose-pyrolyzed carbon and the micron pores play important roles in improving the cycleability of the composite. The flake graphite/silicon/carbon composite electrode is a potential alternative to graphite for high energy-density lithium ion batteries.

  15. Vertically aligned nanowires on flexible silicone using a supported alumina template prepared by pulsed anodization

    Mátéfi-Tempfli, Stefan; Mátéfi-Tempfli, M.

    2009-01-01

    Carpets of vertically aligned nanowires on flexible substrates are successfully realized by a template method. Applying special pulsed anodization conditions, defect-free nanoporous alumina structures supported on polydimethylsiloxane (PDMS), a flexible silicone elastomer, are created. By using...... this template with nanopores ending on a conducting underlayer, a high-density nanowire array can be simply grown by direct DCelectrodeposition on the top of the silicone rubber....

  16. Strongly Enhanced Free-Exciton Luminescence in Microcrystalline CsPbBr3 Films

    Kondo, Shin-ichi; Kakuchi, Mitsugu; Masaki, Atsushi; Saito, Tadaaki

    2003-07-01

    The luminescence properties of CsPbBr3 films prepared via the amorphous phase by crystallization are dominated by free-exciton emission, and only a weak trace of emission due to trapped excitons was observed, in contrast to the case of bulk CsPbBr3 crystals. In particular, the films in the microcrystalline state show by more than an order of magnitude stronger free-exciton emission than in the polycrystalline state. The enhanced free-exciton emission is suggestive of excitonic superradiance.

  17. Preparation and mechanical properties of carbon nanotube-silicon nitride nano-ceramic matrix composites

    Tian, C. Y.; Jiang, H.

    2018-01-01

    Carbon nanotube-silicon nitride nano-ceramic matrix composites were fabricated by hot-pressing nano-sized Si3N4 powders and carbon nanotubes. The effect of CNTs on the mechanical properties of silicon nitride was researched. The phase compositions and the microstructure characteristics of the samples as well as the distribution of carbon nanotube in the silicon nitride ceramic were analyzed by X-ray diffraction and scanning electron microscope. The results show that the microstructure of composites consists mainly of α-Si3N4, β-Si3N4, Si2N2O and carbon natubes. The addition of proper amount of carbon nanotubes can improve the fracture toughness and the flexural strength, and the optimal amount of carbon nanotube are both 3wt.%. However the Vickers hardness values decrease with the increase of carbon nanotubes content.

  18. Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching

    Chien-Wei Liu

    2012-01-01

    Full Text Available Nanostructured solar cells with coaxial p-n junction structures have strong potential to enhance the performances of the silicon-based solar cells. This study demonstrates a radial junction silicon nanowire (RJSNW solar cell that was fabricated simply and at low cost using wet chemical etching. Experimental results reveal that the reflectance of the silicon nanowires (SNWs declines as their length increases. The excellent light trapping was mainly associated with high aspect ratio of the SNW arrays. A conversion efficiency of ∼7.1% and an external quantum efficiency of ∼64.6% at 700 nm were demonstrated. Control of etching time and diffusion conditions holds great promise for the development of future RJSNW solar cells. Improving the electrode/RJSNW contact will promote the collection of carries in coaxial core-shell SNW array solar cells.

  19. Preparation of rare earth and other metal alloys containing aluminum and silicon

    Mitchell, A.; Goldsmith, J.R.; Gray, M.

    1981-01-01

    A method is provided for making alloys of aluminum and silicon with a third metal which may be a rare earth or a member of groups 4b, 5b, or 6b of the periodic table. The flux system CaF 2 -CaO-Al 2 O 3 is used as a solvent to provide a reactive medium for the alloy-forming reactions. Aluminum is supplied as a reducing agent, and silicon is added as a sink for the alloying metal. The resulting alloy may be used in steels. (L.L.)

  20. Investigation into the suitability of capillary tubes for microcrystalline testing.

    Elie, Leonie E; Baron, Mark G; Croxton, Ruth S; Elie, Mathieu P

    2013-07-01

    A comparison between microcrystalline tests performed on microscope slides and flat capillary tubes with inner diameters ranging from 0.1 to 0.7 mm was carried out to explore the appropriateness of tubes for rapid testing of suspected drugs of abuse in the laboratory as well as in the field. Tests for mephedrone, cocaine, and phencyclidine were chosen as examples to investigate the handling of the capillary tubes, the influence on crystal habit, size, and the effects on the limit of detection. Image stacking software was used to increase the depth of field of micrographs taken from developed microcrystals greatly enhancing the interpretability even months after carrying out the microcrystalline test. Additionally, the potential of seeding capillary tubes with a reagent was studied. Pre-treatment of tubes would allow microcrystalline tests to be carried out quicker and anywhere without the necessity of taking along expensive and hazardous reagents. The sealing of capillary tubes containing developed microcrystalline tests in order to preserve results for a long period of time was successfully done by applying paraffin wax to the open ends. Finally, it was concluded that capillary tubes are suitable vessels for performing microcrystalline tests. The increased portability of the improved set-up allows tests to be safely executed outside laboratories without impairing the quality of the result. Findings were applied to six legal high samples purchased online between May and August 2011. The active ingredients like MDAI as well as cutting agents like caffeine were successfully identified using the microcrystalline test technique in capillary tubes. Copyright © 2012 John Wiley & Sons, Ltd.

  1. Optical modelling of thin-film silicon solar cells deposited on textured substrates

    Krc, J.; Zeman, M.; Smole, F.; Topic, M.

    2004-01-01

    Optical modelling is used to investigate effects of light scattering in amorphous silicon and microcrystalline silicon solar cells. The role of enhanced haze parameter and different angular distribution function of scattered light is analyzed. Results of optical simulation show that enhanced haze parameter compared to that of Asahi U-type SnO 2 :F does not improve external quantum efficiency and short-circuit current density of amorphous silicon solar cell significantly, whereas for microcrystalline silicon solar cell the improvement is larger. Angular distribution function affects the external quantum efficiency and the short-circuit current density significantly

  2. Fe3O4 Modification of Microcrystalline Cellulose for Composite Materials

    Dimitrov, Kiril; Herzog, Michael; Nenkova, Sanchi

    2013-01-01

    A new synthesis method for producing cellulose ferrite micro- and nano- composites was developed and new material properties were studied. Microcrystalline cellulose was modified with a mixture of Fe+2/Fe+3 to produce surface bonded nanoparticles magnetite (Fe3O4). Optimal conditions were determined. Microsized hematite (Fe2O3) was mixed with microcrystalline cellulose and used as a reference. The magnetite modified microcrystalline cellulose and hematite filled microcrystalline cellulose wer...

  3. Preparation and characterization of tempered tungsten layers on single crystalline silicon

    Nitzsche, K.; Knedlik, C.; Tippmann, H.; Spiess, L.; Harman, R.; Vanek, O.; Tvarozek, V.

    1984-01-01

    Tungsten layers have been deposited on single crystalline silicon by sputtering and characterized by measurements of the sheet resistance by a linear four point method and the van der Pauw method. The influence of tempering under argon on the resistance has been studied. By means of the RBS spectroscopy it was found that the increase in the specific resistance is caused by interdiffusion

  4. All-(111) surface silicon nanowire field effect transistor devices: Effects of surface preparations

    Masood, M.N.; Carlen, Edwin; van den Berg, Albert

    2014-01-01

    Etching/hydrogen termination of All-(111) surface silicon nanowire field effect (SiNW-FET) devices developed by conventional photolithography and plane dependent wet etchings is studied with X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and

  5. Thin-film silicon solar cell technology

    Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

    2004-01-01

    Roč. 12, - (2004), s. 113-142 ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogenerated amorphous silicon(a-Si:H) * hydrogenerated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building-integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

  6. Preparation and characterization of flake graphite/silicon/carbon spherical composite as anode materials for lithium-ion batteries

    Lai Jun [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Guo Huajun, E-mail: Lai_jun_@126.com [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Wang Zhixing; Li Xinhai; Zhang Xiaoping; Wu Feixiang; Yue Peng [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China)

    2012-07-25

    Highlights: Black-Right-Pointing-Pointer Flake graphite/silicon/carbon composite is synthesized via spray drying. Black-Right-Pointing-Pointer Flake graphite of {approx}0.5 {mu}m and glucose are used to prepare the composite. Black-Right-Pointing-Pointer The as-prepared composite shows spherical and porous appearance. Black-Right-Pointing-Pointer The composite shows nearly the same cycleability as commercial graphite in 20 cycles. Black-Right-Pointing-Pointer The composite shows a reversible capacity of 552 mAh/g at the 20th cycle. - Abstract: Using nano-Si, glucose and flake graphite of {approx}0.5 {mu}m as raw materials, flake graphite/silicon/carbon composite is successfully synthesized via spray drying and subsequent pyrolysis. The samples are characterized by XRD, SEM, TEM and electrochemical measurements. The composite is composed of flake graphite, nano-Si and amorphous glucose-pyrolyzed carbon and presents good spherical appearance. Some micron pores arising from the decomposition of glucose exist on the surface of the composite particles. The composite has a high reversible capacity of 602.7 mAh/g with an initial coulombic efficiency of 69.71%, and shows nearly the same cycleability as the commercial graphite in 20 cycles. Both the glucose-pyrolyzed carbon and the micron pores play important roles in improving the cycleability of the composite. The flake graphite/silicon/carbon composite electrode is a potential alternative to graphite for high energy-density lithium ion batteries.

  7. Pulsed Laser Deposition of Zinc Sulfide Thin Films on Silicon: The influence of substrate orientation and preparation on thin film morphology and texture

    Heimdal, Carl Philip J

    2014-01-01

    The effect of orientation and preparation of silicon substrates on the growth morphology and crystalline structure of ZnS thin films deposited by pulsed laser deposition (PLD) has been investigated through scanning electron microscopy (SEM) and grazing incidence x-ray diffraction (GIXRD). ZnS thin films were grown on silicon (100) and (111), on HF-treated and untreated silicon (100) as well as substrates coated with Al, Ge and Au. The ZnS films showed entirely different morphologies for ZnS f...

  8. Passivation properties of alumina for multicrystalline silicon nanostructure prepared by spin-coating method

    Jiang, Ye; Shen, Honglie; Yang, Wangyang; Zheng, Chaofan; Tang, Quntao; Yao, Hanyu; Raza, Adil; Li, Yufang; Huang, Chunlai

    2018-02-01

    In this paper, we report passivation properties of inverted pyramidal nanostructure based multi-crystalline silicon (mc-Si) by Al2O3 films with spin-coating method. Precursors AlCl3 and Al(acac)3 for Al2O3 films were chosen for comparison. Al2O3/SiO x stacks were found to be able to passivate the nanostructured surface well. With the number of spin-coating up to five, the Al2O3 films could conformally attach the nanostructure. The weighted average reflectance values (ranging from 400-900 nm) of the passivated silicon surface could be reduced to 10.74% (AlCl3) and 11.12% (Al(acac)3), and the effective carrier lifetime could reach 7.84 and 16.98 μs, respectively. This work presented a potential process to fabricate low cost high efficiency mc-Si solar cells.

  9. Preparation and biological evaluation of ethionamide-mesoporous silicon nanoparticles against Mycobacterium tuberculosis

    Vale, Nuno; Correia, Alexandra; Silva, Sara; Figueiredo, Patrícia; Mäkilä, , Ermei; Salonen, Jarno; Hirvonen, Jouni; Pedrosa, Jorge; Santos Hélder A.; Fraga, Alexandra

    2017-01-01

    Ethionamide (ETH) is an important second-line antituberculosis drug used for the treatment of patients infected with multidrug-resistant Mycobacterium tuberculosis. Recently, we reported that the loading of ETH into thermally carbonized-porous silicon (TCPSi) nanoparticles enhanced the solubility and permeability of ETH at different pH-values and also increased its metabolization process. Based on these results, we synthesized carboxylic acid functionalized thermally hydrocarbonized porous si...

  10. Optimization of extraction of microcrystalline cellulose from orange ...

    This study investigated the optimum processing conditions for obtaining the maximum yield of microcrystalline cellulose (MCC) powder from orange peel waste (OPW) by use of response surface methodology (RSM). Central composite design (CCD) was used to evaluate the optimum process conditions for producing MCC ...

  11. Preparation of composite micro/nano structure on the silicon surface by reactive ion etching: Enhanced anti-reflective and hydrophobic properties

    Zeng, Yu; Fan, Xiaoli; Chen, Jiajia; He, Siyu; Yi, Zao; Ye, Xin; Yi, Yougen

    2018-05-01

    A silicon substrate with micro-pyramid structure (black silicon) is prepared by wet chemical etching and then subjected to reactive ion etching (RIE) in the mixed gas condition of SF6, CHF3 and He. We systematically study the impacts of flow rates of SF6, CHF3 and He, the etching pressure and the etching time on the surface morphology and reflectivity through various characterizations. Meanwhile, we explore and obtain the optimal combination of parameters for the preparation of composite structure that match the RIE process based on the basis of micro-pyramid silicon substrate. The composite sample prepared under the optimum parameters exhibits excellent anti-reflective performance, hydrophobic, self-cleaning and anti-corrosive properties. Based on the above characteristics, the composite micro/nano structure can be applied to solar cells, photodetectors, LEDs, outdoor devices and other important fields.

  12. Preparation of silicon-substituted hydroxyapatite coatings on Ti–30Nb–xTa alloys using cyclic electrochemical deposition method

    Kim, Eun-Sil [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, School of Dentistry, Chosun University (Korea, Republic of); Jeong, Yong-Hoon [Biomechanics and Tissue Engineering Laboratory, Division of Orthodontics, College of Dentistry, The Ohio State University, Columbus, OH (United States); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, School of Dentistry, Chosun University (Korea, Republic of); Brantley, William A. [Division of Restorative Science and Prosthodontics, College of Dentistry, The Ohio State University, Columbus, OH (United States)

    2014-12-01

    Silicon-substituted hydroxyapatite coatings on Ti–30Nb–xTa alloys, prepared using a cyclic electrochemical deposition method, have been investigated using a variety of surface analytical experimental methods. The silicon-substituted hydroxyapatite (Si-HA) coatings were prepared by electrolytic deposition in electrolytes containing Ca{sup 2+}, PO{sub 4}{sup 3−} and SiO{sub 3}{sup 2−} ions. The deposited layers were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDS), and a wettability test. Phase transformation from (α″ + β) to largely β occurred with increasing Ta content in the Ti –30Nb–xTa alloys, yielding larger grain size. The morphology of the Si-HA coatings was changed by increasing the number of deposition cycles, with the initial plate-like structures changing to mixed rod-like and plate-like shapes, and finally to a rod-like structure. From the ATR-FTIR spectra, Si existed in the form of SiO{sub 4}{sup 4−} groups in Si-HA coating layer. The lowest aqueous contact angles and best wettability were found for the Si-HA coatings prepared with 30 deposition cycles. - Highlights: • Electrochemically deposited Si-HA coatings on Ti –30Nb–xTa alloys were investigated. • The Si-HA coatings were initially precipitated along the martensitic structure. • The morphology of the Si-HA coating changed with the deposition cycles. • Si existed in the form of SiO{sub 4}{sup 4−} groups in the Si-HA coating.

  13. Preparation of silicon-substituted hydroxyapatite coatings on Ti–30Nb–xTa alloys using cyclic electrochemical deposition method

    Kim, Eun-Sil; Jeong, Yong-Hoon; Choe, Han-Cheol; Brantley, William A.

    2014-01-01

    Silicon-substituted hydroxyapatite coatings on Ti–30Nb–xTa alloys, prepared using a cyclic electrochemical deposition method, have been investigated using a variety of surface analytical experimental methods. The silicon-substituted hydroxyapatite (Si-HA) coatings were prepared by electrolytic deposition in electrolytes containing Ca 2+ , PO 4 3− and SiO 3 2− ions. The deposited layers were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDS), and a wettability test. Phase transformation from (α″ + β) to largely β occurred with increasing Ta content in the Ti –30Nb–xTa alloys, yielding larger grain size. The morphology of the Si-HA coatings was changed by increasing the number of deposition cycles, with the initial plate-like structures changing to mixed rod-like and plate-like shapes, and finally to a rod-like structure. From the ATR-FTIR spectra, Si existed in the form of SiO 4 4− groups in Si-HA coating layer. The lowest aqueous contact angles and best wettability were found for the Si-HA coatings prepared with 30 deposition cycles. - Highlights: • Electrochemically deposited Si-HA coatings on Ti –30Nb–xTa alloys were investigated. • The Si-HA coatings were initially precipitated along the martensitic structure. • The morphology of the Si-HA coating changed with the deposition cycles. • Si existed in the form of SiO 4 4− groups in the Si-HA coating

  14. Study of some structural properties of hydrogenated amorphous silicon thin films prepared by radiofrequency cathodic sputtering

    Mellassi, K.; Chafik El Idrissi, M.; Barhdadi, A.

    2001-08-01

    In this work, we have used the grazing X-rays reflectometry technique to characterise hydrogenated amorphous silicon thin films deposited by radio-frequency cathodic sputtering. Relfectometry measurements are taken immediately after films deposition as well as after having naturally oxidised their surfaces during a more or less prolonged stay in the ambient. For the films examined just after deposition, the role of hydrogen appears in the increase of their density. For those analysed after a short stay in the ambient, hydrogen plays a protective role against the oxidation of their surfaces. This role disappears when the stay in the ambient is so long. (author)

  15. A p-silicon nanowire/n-ZnO thin film heterojunction diode prepared by thermal evaporation

    Hazra, Purnima; Jit, S.

    2014-01-01

    This paper represents the electrical and optical characteristics of a SiNW/ZnO heterojunction diode and subsequent studies on the photodetection properties of the diode in the ultraviolet (UV) wavelength region. In this work, silicon nanowire arrays were prepared on p-type (100)-oriented Si substrate by an electroless metal deposition and etching method with the help of ultrasonication. After that, catalyst-free deposition of zinc oxide (ZnO) nanowires on a silicon nanowire (SiNW) array substrate was done by utilizing a simple and cost-effective thermal evaporation technique without using a buffer layer. The SEM and XRD techniques are used to show the quality of the as-grown ZnO nanowire film. The junction properties of the diode are evaluated by measuring current—voltage and capacitance—voltage characteristics. The diode has a well-defined rectifying behavior with a rectification ratio of 190 at ±2 V, turn-on voltage of 0.5 V, and barrier height is 0.727 eV at room temperature under dark conditions. The photodetection parameters of the diode are investigated in the bias voltage range of ±2 V. The diode shows responsivity of 0.8 A/W at a bias voltage of 2 V under UV illumination (wavelength = 365 nm). The characteristics of the device indicate that it can be used for UV detection applications in nano-optoelectronic and photonic devices. (semiconductor devices)

  16. Preparation and mechanical properties of liquid-phase sinterd silicon carbide; Herstellung und mechanische Eigenschaften von fluessigphasengesintertem Siliziumkarbid

    Wiedmann, I.

    1998-12-01

    Liquid-phase sintered silicon carbide ceramics, LPS-SiC, were prepared, and the influence of structure and chemical secondary phase composition on the mechanical properties was investigated in order to identify LPS-SiC materials which can be produced reproducibly and with low loss of mass by simple techniques, i.e. without powder bed or encapsulation. Their profile of characteristics should be superior to conventional solid-phase sintered SiC and should be comparable with liquid-phase sintered silicon nitride ceramics. [Deutsch] In der vorliegenden Arbeit wurden fluessigphasengesinterte Siliziumkarbid-Keramiken, LPS-SiC, hergestellt und der Einfluss der Gefuegeausbildung und der chemischen Sekundaerphasenzusammensetzung auf die mechanischen Eigenschaften untersucht. Ziel war es, LPS-SiC-Materialien zu identifizieren, die ohne besonderen Vorkehrungen wie Pulverbett oder Einkapselung reproduzierbar und mit geringem Masseverlust hergestellt werden koennen. Das Eigenschaftsprofil sollte deutlich ueber dem von konventionell festphasengesintertem SiC liegen und vergleichbar zu fluessigphasengesinterten Siliziumnitrid-Keramiken sein. (orig.)

  17. Aan der Waals terminated silicon(111) surfaces and interfaces. Preparation, morphology, and electronic properties

    Fritsche, R.

    2004-01-01

    The aim of this thesis is the implementation of the concept of the quasi-van der Waals epitaxy as a new perspective for the integration of reactive and lattice-defect fitted materials into the silicon technology. The experimental characterization of this approach pursues in two subsequent sections. First the chemical and electronic passivation of a three-dimensional substrate (silicon) is studied by means of an ultrathin buffer layer from the material class of the layered-lattice chalcogenides (GaSe). The substrate surface (Si(111):GaSe) modified in this way possesses an inert van der Waals surface and serves in the following as base for the deposition of the against the non-passivated substrate really reactive and lattice-defect fitted materials (II-VI-compound semiconductors and metals) The characterization of the electronic and chemical properties of the surfaces and interfaces pursues with highly resolved photoelectron spectroscopy (SXPS). The results are supplemented by the characterization of the morphology by the diffraction of low-energy electrons (LEED) and the scanning tunnel microscopy (STM)

  18. Materials preparation and fabrication of pyroelectric polymer/silicon MOSFET detector arrays. Final report

    Bloomfield, P.

    1992-01-01

    The authors have delivered several 64-element linear arrays of pyroelectric elements fully integrated on silicon wafers with MOS readout devices. They have delivered detailed drawings of the linear arrays to LANL. They have processed a series of two inch wafers per submitted design. Each two inch wafer contains two 64 element arrays. After spin-coating copolymer onto the arrays, vacuum depositing the top electrodes, and polarizing the copolymer films so as to make them pyroelectrically active, each wafer was split in half. The authors developed a thicker oxide coating separating the extended gate electrode (beneath the polymer detector) from the silicon. This should reduce its parasitic capacitance and hence improve the S/N. They provided LANL three processed 64 element sensor arrays. Each array was affixed to a connector panel and selected solder pads of the common ground, the common source voltage supply connections, the 64 individual drain connections, and the 64 drain connections (for direct pyroelectric sensing response rather than the MOSFET action) were wire bonded to the connector panel solder pads. This entails (64 + 64 + 1 + 1) = 130 possible bond connections per 64 element array. This report now details the processing steps and the progress of the individual wafers as they were carried through from beginning to end

  19. Glow discharge preparation and electrooptical characterisation of amorphous silicon alloys for solar cells. Preparacion por descarga luminiscente y caracterizacion electrooptica de aleaciones de silicio amorfo para celulas solares

    Carabe, J

    1990-11-01

    A study is presented, focused on the preparation and characterisation of hydrogenated amorphous silicon alloy thin films for their application as p type window layers in pin silicon solar cells. The preparation technique used was radio frequency glow discharge. The samples were characterised optically (visible, near infrared and infrared absorption spectrophotometry) and electrically (dark and photoconductivities at ambient temperature and as functions of temperature). The influence of each of the preparation parameters on film properties has been systematically studied. The results have been analysed according to the existing models. Chapter 1 is an introduction to the material in question and its photovoltaic applications. Chapter 2 describes the experimental procedure used. Capter 3 shows and discusses the most relevant results obtained in the study of intrinsic amorphous silicon, p type amorphous silicon and p type amorphous silicon carbide window layers, with special emphasis on the influence of the use of an alternative dopant gas: boron trifluoride. Finally, chapter 4 summarises the most relevant conclusions drawn from this research work. (Author)

  20. Influence of Tableting on Enzymatic Activity of Papain along with Determination of Its Percolation Threshold with Microcrystalline Cellulose

    Sharma, Manu; Sharma, Vinay; Majumdar, Dipak K.

    2014-01-01

    The binary mixture tablets of papain and microcrystalline cellulose (MCC), dicalcium phosphate dihydrate (DCP), carrageenan, tragacanth, and agar were prepared by direct compression. Carrageenan, tragacanth, and agar provided maximum protection to enzyme activity compared to MCC and DCP. However, stability studies indicated highest loss of enzyme activity with carrageenan, tragacanth, and agar. Therefore, compression behaviour of different binary mixtures of papain with MCC at different compaction pressures, that is, 40–280 MPa, was studied according to Heckel equation. The compressibility studies of binary mixtures indicated brittle behavior of papain. The application of percolation theory on the relationship between critical density as a function of enzyme activity and mixture composition revealed the presence of percolation threshold for binary mixture. Papain-MCC mixture composition showed significant percolation threshold at 18.48% (w/w) papain loading. Microcrystalline cellulose provided higher protection during stability study. However, higher concentrations of microcrystalline cellulose, probably as dominant particles, do not protect the enzyme with their plastic deformation. Below the percolation threshold, that is, 18.48% (w/w) papain amount in mixture with plastic excipient, activity loss increases strongly because of higher shearing forces during compaction due to system dominance of plastic particles. This mixture range should therefore be avoided to get robust formulation of papain. PMID:27350972

  1. MgB2 thin films on silicon nitride substrates prepared by an in situ method

    Monticone, Eugenio; Gandini, Claudio; Portesi, Chiara; Rajteri, Mauro; Bodoardo, Silvia; Penazzi, Nerino; Dellarocca, Valeria; Gonnelli, Renato S

    2004-01-01

    Large-area MgB 2 thin films were deposited on silicon nitride and sapphire substrates by co-deposition of Mg and B. After a post-annealing in Ar atmosphere at temperatures between 773 and 1173 K depending on the substrate, the films showed a critical temperature higher than 35 K with a transition width less than 0.5 K. The x-ray diffraction pattern suggested a c-axis preferential orientation in films deposited on amorphous substrate. The smooth surface and the good structural properties of these MgB 2 films allowed their reproducible patterning by a standard photolithographic process down to dimensions of the order of 10 μm and without a considerable degradation of the superconducting properties

  2. Origin of photoluminescence from silicon nanowires prepared by metal induced etching (MIE)

    Saxena, Shailendra K.; Rai, Hari. M.; Late, Ravikiran; Sagdeo, Pankaj R.; Kumar, Rajesh

    2015-01-01

    In this present study the origin of luminescence from silicon nanowires (SiNws) has been studied. SiNWs are fabricated on Si substrate by metal induced chemical etching (MIE). Here it is found that the band gap of SiNWs is higher than the gap of luminescent states in SiNWs which leads to the effect of Si=O bond. The band gap is estimated from diffuse reflectance analysis. Here we observe that band gap can be tailored depending on size (quantum confinement) but photoluminescence (PL) from all the sample is found to be fixed at 1.91 eV. This study is important for the understanding of origin of photoluminescence

  3. Biological functionalization and patterning of porous silicon prepared by Pt-assisted chemical etching

    Li, Hong-Fang; Han, Huan-Mei; Wu, Ya-Guang; Xiao, Shou-Jun

    2010-04-01

    Porous silicon fabricated via Pt-assisted chemical etching of p-type Si (1 0 0) in 1:1:1 EtOH/HF/H 2O 2 solution possesses a longer durability in air and in aqueous media than anodized one, which is advantageous for biomedical applications. Its surface SiH x ( x = 1 and 2) species can react with 10-undecylenic acid completely under microwave irradiation, and subsequent derivatizations of the end carboxylic acid result in affinity capture of proteins. We applied two approaches to produce protein microarrays: photolithography and spotting. The former provides a homogeneous microarray with a very low fluorescence background, while the latter presents an inhomogeneous microarray with a high noise background.

  4. Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted deposition

    Shima, Yukari; Hasuyama, Hiroki; Kondoh, Toshiharu; Imaoka, Yasuo; Watari, Takanori; Baba, Koumei; Hatada, Ruriko

    1999-01-01

    Silicon oxynitride (SiO x N y ) films (0.1-0.7 μm) were produced on Si (1 0 0), glass and 316L stainless steel substrates by ion beam assisted deposition (IBAD) using Si evaporation and the concurrent bombardment with a mixture of 200 eV N 2 and Ar, or O 2 and Ar ions. Adhesion was evaluated by pull-off tests. Film hardness was measured by a nanoindentation system with AFM. The measurement of internal stress in the films was carried out by the Stoney method. The film structure was examined by GXRD. XPS was employed to measure the composition of films and to analyze the chemical bonds. The dependence of mechanical properties on the film thickness and the processing temperature during deposition was studied. Finally, the relations between the mechanical properties of the films and the correlation with corrosion-protection ability of films are discussed and summarized

  5. Biological functionalization and patterning of porous silicon prepared by Pt-assisted chemical etching

    Li Hongfang; Han Huanmei; Wu Yaguang; Xiao Shoujun

    2010-01-01

    Porous silicon fabricated via Pt-assisted chemical etching of p-type Si (1 0 0) in 1:1:1 EtOH/HF/H 2 O 2 solution possesses a longer durability in air and in aqueous media than anodized one, which is advantageous for biomedical applications. Its surface SiHx (x = 1 and 2) species can react with 10-undecylenic acid completely under microwave irradiation, and subsequent derivatizations of the end carboxylic acid result in affinity capture of proteins. We applied two approaches to produce protein microarrays: photolithography and spotting. The former provides a homogeneous microarray with a very low fluorescence background, while the latter presents an inhomogeneous microarray with a high noise background.

  6. Preparation and characterization of ultra-thin amphiphobic coatings on silicon wafers

    Mou, Chun-Yueh; Yuan, Wei-Li; Shih, Chih-Hsin

    2013-01-01

    Fluorine-based amphiphobic coatings have been widely used in commercial domestic utensils and textiles to repel water and oil contaminants. However, few reports from the literature survey have discussed the effects on amphiphobicity of the nano- to micro-scale surface features of such a coating. In this research thin amphiphobic epoxy coatings based on a mixture of bisphenol A diglycidyl ether, tetraethylorthosilicate (TEOS), and a particular alkoxy silane with fluorinated side chains (F-silane) are deposited on silicon wafers. Film amphiphobicity is characterized by the measurement of water and oil contact angles of the coating. Film morphology is revealed in the scanned images using atomic force microscopy. The deposited films free of F-silane are about 10 nm thick. When a small amount of F-silane was firstly added, the water and oil contact angles of the deposited films jumped up to 107° and 69° respectively and then flattened out with increased F-silane. Water droplets gave an average plateau contact angle about 110°, while vegetable oil ones, 40°. It was noted that there is a dramatic decrease in the lyophobicity causing a reduction in contact angles. However, surface lyophobicity also depends on sub-microscopic surface structures. In addition, by increasing TEOS, it was shown that the formed silica sols or granules were helpful in enhancing the mechanical strength along with retaining the lyophobicity of the film. - Highlights: • Epoxy ultrathin films about 10 nm thick deposited on silicon wafer. • Nominal fluorinated silane added to epoxy coatings for amphiphobicity. • Surface lyophobicity retained by sub-micrometer granules in ultrathin coatings. • Film hardness improved by adding tetraethylorthosilicate

  7. Preparation and characterization of ultra-thin amphiphobic coatings on silicon wafers

    Mou, Chun-Yueh, E-mail: cymou165@gmail.com; Yuan, Wei-Li; Shih, Chih-Hsin

    2013-06-30

    Fluorine-based amphiphobic coatings have been widely used in commercial domestic utensils and textiles to repel water and oil contaminants. However, few reports from the literature survey have discussed the effects on amphiphobicity of the nano- to micro-scale surface features of such a coating. In this research thin amphiphobic epoxy coatings based on a mixture of bisphenol A diglycidyl ether, tetraethylorthosilicate (TEOS), and a particular alkoxy silane with fluorinated side chains (F-silane) are deposited on silicon wafers. Film amphiphobicity is characterized by the measurement of water and oil contact angles of the coating. Film morphology is revealed in the scanned images using atomic force microscopy. The deposited films free of F-silane are about 10 nm thick. When a small amount of F-silane was firstly added, the water and oil contact angles of the deposited films jumped up to 107° and 69° respectively and then flattened out with increased F-silane. Water droplets gave an average plateau contact angle about 110°, while vegetable oil ones, 40°. It was noted that there is a dramatic decrease in the lyophobicity causing a reduction in contact angles. However, surface lyophobicity also depends on sub-microscopic surface structures. In addition, by increasing TEOS, it was shown that the formed silica sols or granules were helpful in enhancing the mechanical strength along with retaining the lyophobicity of the film. - Highlights: • Epoxy ultrathin films about 10 nm thick deposited on silicon wafer. • Nominal fluorinated silane added to epoxy coatings for amphiphobicity. • Surface lyophobicity retained by sub-micrometer granules in ultrathin coatings. • Film hardness improved by adding tetraethylorthosilicate.

  8. Separation followed by direct SERS detection of explosives on a novel black silicon multifunctional nanostructured surface prepared in a microfluidic channel

    Talian, Ivan; Hübner, Jörg

    2013-01-01

    The article describes the multifunctionality of a novel black silicon (BS) nanostructured surface covered with a thin layer of noble metal prepared in the a microfluidic channel. It is focused on the separation properties of the BS substrate with direct detection of the separated analytes utilizing...

  9. Indium tin oxide thin-films prepared by vapor phase pyrolysis for efficient silicon based solar cells

    Simashkevich, Alexei, E-mail: alexeisimashkevich@hotmail.com [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Serban, Dormidont; Bruc, Leonid; Curmei, Nicolai [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Hinrichs, Volker [Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Rusu, Marin [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)

    2016-07-01

    The vapor phase pyrolysis deposition method was developed for the preparation of indium tin oxide (ITO) thin films with thicknesses ranging between 300 and 400 nm with the sheet resistance of 10–15 Ω/sq. and the transparency in the visible region of the spectrum over 80%. The layers were deposited on the (100) surface of the n-type silicon wafers with the charge carriers concentration of ~ 10{sup 15} cm{sup −3}. The morphology of the ITO layers deposited on Si wafers with different surface morphologies, e.g., smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) was investigated. The as-deposited ITO thin films consist of crystalline columns with the height of 300–400 nm and the width of 50–100 nm. Photovoltaic parameters of mono- and bifacial solar cells of Cu/ITO/SiO{sub 2}/n–n{sup +} Si/Cu prepared on Si (100) wafers with different surface structures were studied and compared. A maximum efficiency of 15.8% was achieved on monofacial solar cell devices with the textured Si surface. Bifacial photovoltaic devices from 100 μm thick Si wafers with the smooth surface have demonstrated efficiencies of 13.0% at frontal illumination and 10% at rear illumination. - Highlights: • ITO thin films prepared by vapor phase pyrolysis on Si (100) wafers with a smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) surface. • Monofacial ITO/SiO2/n-n+Si solar cells with an efficiency of 15.8% prepared and bifacial PV devices with front- and rear-side efficiencies up to 13% demonstrated. • Comparative studies of photovoltaic properties of solar cells with different morphologies of the Si wafer surface presented.

  10. Characterization of magnetic biochar amended with silicon dioxide prepared at high temperature calcination

    Baig Shams Ali

    2016-09-01

    Full Text Available Calcination is considered to increase the hardness of composite material and prevent its breakage for the effective applications in environmental remediation. In this study, magnetic biochar amended with silicon dioxide was calcined at high temperature under nitrogen environment and characterized using various techniques. X-ray diffraction (XRD analysis revealed elimination of Fe3O4 peaks under nitrogen calcination and formation of Fe3Si and iron as major constituents of magnetic biochar-SiO2 composite, which demonstrated its superparamagnetic behavior (>80 A2·kg−1 comparable to magnetic biochar. Thermogravimetric analysis (TGA revealed that both calcined samples generated higher residual mass (>96 % and demonstrated better thermal stability. The presence of various bands in Fourier transform infrared spectroscopy (FT-IR was more obvious and the elimination of H–O–H bonding was observed at high temperature calcination. In addition, scanning electron microscopy (SEM images revealed certain morphological variation among the samples and the presence of more prominent internal and external pores, which then judged the surface area and pore volume of samples. Findings from this study suggests that the selective calcination process could cause useful changes in the material composites and can be effectively employed in environmental remediation measures.

  11. Preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites

    Kim, Hyeon-Hye [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of); Nano& Advanced Materials Engineering, Jeonju University, Jeonju 560-759 (Korea, Republic of); Han, Woong [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of); Lee, Hae-seong [Nano& Advanced Materials Engineering, Jeonju University, Jeonju 560-759 (Korea, Republic of); Min, Byung-Gak [Department of Polymer Science & Engineering, Korea National University of Transportation, Chungju 380-702 (Korea, Republic of); Kim, Byung-Joo, E-mail: ap2-kbj@hanmail.net [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of)

    2015-10-15

    Graphical abstract: We report preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites. Thermally composites showed enhanced thermal conductivity increasing from up to 59% by the thermal network. - Highlights: • A new method of Si−N coating on carbon fibers was reported. • Silane layer were successfully converted to Si−N layer on carbon fiber surface. • Si−N formation was confirmed by FT-IR, XPS, and EDX. • Thermal conductivity of Si−N coated CF composites were enhanced to 0.59 W/mK. - Abstract: This study investigates the effect of silicon nitride (Si−N)-coated carbon fibers on the thermal conductivity of carbon-fiber-reinforced epoxy composite. The surface properties of the Si−N-coated carbon fibers (SiNCFs) were observe using Fourier transform infrared spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy, and the thermal stability was analyzed using thermogravimetric analysis. SiNCFs were fabricated through the wet thermal treatment of carbon fibers (Step 1: silane finishing of the carbon fibers; Step 2: high-temperature thermal treatment in a N{sub 2}/NH{sub 3} environment). As a result, the Si−N belt was exhibited by SEM. The average thickness of the belt were 450–500 nm. The composition of Si−N was the mixture of Si−N, Si−O, and C−Si−N as confirmed by XPS. Thermal residue of the SiNCFs in air was enhanced from 3% to 50%. Thermal conductivity of the composites increased from 0.35 to 0.59 W/mK after Si−N coating on carbon surfaces.

  12. Trichlorosilane and silicon tetrachloride sample preparation for determination of boron, phosphorus and arsenic microelements

    Stolyarova, I.V.; Orlova, V.A.

    1995-01-01

    The conditions of sample preparation ensuring virtually complete elimination of boron, phosphorus, and arsenic losses are elaborated. Analysis procedures are proposed that involve hydrolysis in an autoclave for exothermic reactions and/or in an open reaction reservoir on frozen twice-distilled water with complexing-agent and oxidant solutionsd applied layer-by-layer, with the possible subsequent atomic-emission, extraction-spectrophotometric, or extraction-colorimetric determination of boron, phosphorus, and arsenic. The procedures improve the accuracy and precision of the results and reduce the duration of chemical preparation due to the quantitative preconcentration of boron, phosphorus, and arsenic; they almost completely eliminate the possibility of the formation of volatile fluoride forms of these elements. 11 refs.; 3 tabs

  13. Ceria/silicon carbide core–shell materials prepared by miniemulsion technique

    Lars Borchardt

    2011-09-01

    Full Text Available For the first time we present the synthesis of CeO2/Si(OC core–shell particles prepared by the miniemulsion technique. The Si(OC core was obtained by means of a polycarbosilane precursor (SMP10, which was subsequently functionalized with ceria and pyrolyzed to the ceramic. The size of these particles could easily be adjusted by varying the surfactants and the surfactant concentration, or by the addition of comonomers. Hence particle sizes ranged from 100 to 1000 nm, tunable by the preparation conditions. All materials were characterized by photon cross correlation spectroscopy, scanning electron microscopy and elemental mapping investigations. Furthermore, first catalytic tests were carried out by temperature programmed oxidation (TPO of methane, and the activity of this material in lowering the onset temperature of methane combustion by 262 K was documented.

  14. Impacts of Different Functional Groups on the Kinetic Rates of α-Amine Ketoximesilanes Hydrolysis in the Preparation of Room Temperature Vulcanized Silicone Rubber.

    Xu, Huihui; Liu, Zihou; Liu, Qingyang; Bei, Yiling; Zhu, Qingzeng

    2018-05-13

    α-Amine ketoximesilanes are proven to be effective crosslinkers in the preparation of ketone-oxime one-component room temperature vulcanized (RTV) silicone rubber without the use of toxic metal catalyst. This work aimed to investigate the hydrolysis kinetic of α-amine ketoximesilanes, which is vitally important for the preparation of RTV silicone rubber. Five kinds of α-amine ketoximesilanes, namely α-(N,N-diethyl)aminomethyltri(methylethylketoxime)silane (DEMOS), α-(N,N-di-n-butyl)aminomethyltri(methylethylketoxime)silane (DBMOS), α-(N-n-butyl)aminomethyltri(methylethylketoxime)silane (n-BMOS), α-(N-cyclohexyl)aminomethyltri(methylethylketoxime)silane (CMOS) and α-(β-aminomethyl)aminomethyltri(methylethylketoxime)silane (AEMOS), were successfully obtained and confirmed using Fourier transform infrared spectrometer (FT-IR) and hydrogen-1 nuclear magnetic resonance ( ¹H NMR). Kinetics of hydrolysis reactions were measured by FT-IR and conductivity. Our results illustrated that the kinetic constant rates ranged from 12.2 × 10 −4 s −1 to 7.6 × 10 −4 s −1 , with the decreasing order of DEMOS > n-BMOS > DBMOS > CMOS > AEMOS at the given temperature and humidity. Better performances of thermal stability could be achieved when using the α-amine ketoximesilanes as crosslinkers in the preparation of RTV silicon rubber than that of RTV silicone rubber with the use of methyltri(methylethylketoxime)silane (MOS) as a crosslinker and organic tin as a catalyst.

  15. Surface microstructure and cell biocompatibility of silicon-substituted hydroxyapatite coating on titanium substrate prepared by a biomimetic process

    Zhang Erlin; Zou Chunming; Yu Guoning

    2009-01-01

    Silicon-substituted hydroxyapatite (Si-HA) coatings with 0.14 to 1.14 at.% Si on pure titanium were prepared by a biomimetic process. The microstructure characterization and the cell compatibility of the Si-HA coatings were studied in comparison with that of hydroxyapatite (HA) coating prepared in the same way. The prepared Si-HA coatings and HA coating were only partially crystallized or in nano-scaled crystals. The introduction of Si element in HA significantly reduced P and Ca content, but densified the coating. The atom ratio of Ca to (P + Si) in the Si-HA coatings was in a range of 1.61-1.73, increasing slightly with an increase in the Si content. FTIR results displayed that Si entered HA in a form of SiO 4 unit by substituting for PO 4 unit. The cell attachment test showed that the HA and Si-HA coatings exhibited better cell response than the uncoated titanium, but no difference was observed in the cell response between the HA coating and the Si-HA coatings. Both the HA coating and the Si-HA coatings demonstrated a significantly higher cell growth rate than the uncoated pure titanium (p < 0.05) in all incubation periods while the Si-HA coating exhibited a significantly higher cell growth rate than the HA coating (p < 0.05). Si-HA with 0.42 at.% Si presented the best cell biocompatibility in all of the incubation periods. It was suggested that the synthesis mode of HA and Si-HA coatings in a simulated body environment in the biomimetic process contribute significantly to good cell biocompatibility

  16. Thermal conductivity of high-porosity heavily doped biomorphic silicon carbide prepared from sapele wood biocarbon

    Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; Cabezas-Rodriguez, R.; Ramirez-Rico, J.

    2012-08-01

    The electrical resistivity and thermal conductivity of high-porosity (˜52 vol %, channel-type pores) bio-SiC samples prepared from sapele wood biocarbon templates have been measured in the temperature range 5-300 K. An analysis has been made of the obtained results in comparison with the data for bio-SiC samples based on beech and eucalyptus, as well as for polycrystalline β-SiC. The conclusion has been drawn that the electrical resistivity and thermal conductivity of bio-SiC samples based on natural wood are typical of heavily doped polycrystalline β-SiC.

  17. Preparation of hydrogenated amorphous silicon and its characterization by transient photoconductivity

    Walker, C.M.

    1992-01-01

    Hydrogenated amorphous silicon (a-Si:H) is a semiconductor material that has generated recent widespread interest because of its low manufacturing and processing costs compared with other semiconducting materials. The performance of devices incorporating a-Si:H depends to a large extent on the photoresponse of the a-Si:H. The work in this thesis involves the construction of an a-Si:H plasma-enhanced chemical vapor deposition (PECVD) system, characterization of the quality of the a-Si:H produced by this system, and measurement of the transient photoconductivity n response to pulses of laser illumination with different durations. The relationship of the design of the PECVD system to the quality of the a-Si:H is treated, emphasizing the features included in the system to reduce the incorporation of defects in the a-Si:H layers. These features include an ultra-high-vacuum deposition chamber, a load-lock chamber enabling samples to be loaded under vacuum, and an electrode assembly designed to produce a uniform electric field for decomposing the reactant gases. The quality of the A-Si:H films is examined. The dark conductivity activation energy, optical absorption, and photoconductivity are measured to characterize intrinsic, p-doped, and n-doped a-Si:H layers. The current vs. voltage characteristics under illuminated and dark conditions, and the quantum efficiency are measured on a-Si:H p-i-n diodes made in our system, and the results show that these diodes compare favorably to similar high-quality p-i-n diodes produced at other laboratories. An investigation into the effect of the light-induced degradation associated with a-Si:H on the performance of OASLMs is also presented. Finally, the transient photoresponse to laser pulses ranging in duration from 1 μs to 1 s over a range of temperatures from 100 to 300 K is investigated. We have discovered that the response time of the initial photoconductivity decay increases as the excitation-pulse duration increases

  18. Preparation of electromechanically active silicone composites and some evaluations of their suitability for biomedical applications.

    Iacob, Mihail; Bele, Adrian; Patras, Xenia; Pasca, Sorin; Butnaru, Maria; Alexandru, Mihaela; Ovezea, Dragos; Cazacu, Maria

    2014-10-01

    Some films based on electromechanically active polymer composites have been prepared. Polydimethylsiloxane-α,ω-diols (PDMSs) having different molecular masses (Mv=60 700 and Mv=44 200) were used as matrix in which two different active fillers were incorporated: titanium dioxide in situ generated from its titanium isopropoxide precursor and silica particles functionalized with polar aminopropyl groups on surface. A reference sample based on simple crosslinked PDMS was also prepared. The composites processed as films were investigated to evaluate their ability to act as efficient electromechanical actuators for potential biomedical application. Thus, the surface morphology of interest for electrodes compliance was analysed by atomic force microscopy. Mechanical and dielectric characteristics were evaluated by tensile tests and dielectric spectroscopy, respectively. Electromechanical actuation responses were measured by interferometry. The biocompatibility of the obtained materials has been verified through tests in vitro and, for valuable films, in vivo. The experimental, clinical and anatomopathological evaluation of the in vivo tested samples did not reveal significant pathological modifications. Copyright © 2014 Elsevier B.V. All rights reserved.

  19. Thin film silicon photovoltaics: Architectural perspectives and technological issues

    Mercaldo, Lucia Vittoria; Addonizio, Maria Luisa; Noce, Marco Della; Veneri, Paola Delli; Scognamiglio, Alessandra; Privato, Carlo [ENEA, Portici Research Center, Piazzale E. Fermi, 80055 Portici (Napoli) (Italy)

    2009-10-15

    Thin film photovoltaics is a particularly attractive technology for building integration. In this paper, we present our analysis on architectural issues and technological developments of thin film silicon photovoltaics. In particular, we focus on our activities related to transparent and conductive oxide (TCO) and thin film amorphous and microcrystalline silicon solar cells. The research on TCO films is mainly dedicated to large-area deposition of zinc oxide (ZnO) by low pressure-metallorganic chemical vapor deposition. ZnO material, with a low sheet resistance (<8 {omega}/sq) and with an excellent transmittance (>82%) in the whole wavelength range of photovoltaic interest, has been obtained. ''Micromorph'' tandem devices, consisting of an amorphous silicon top cell and a microcrystalline silicon bottom cell, are fabricated by using the very high frequency plasma enhanced chemical vapor deposition technique. An initial efficiency of 11.1% (>10% stabilized) has been obtained. (author)

  20. Silicon-containing polymer-derived ceramic nanocomposites (PDC-NCs): preparative approaches and properties.

    Ionescu, Emanuel; Kleebe, Hans-Joachim; Riedel, Ralf

    2012-08-07

    Composites consist by definition of at least two materials (Gibbsian phases) with rather different properties. They exhibit a heterogeneous microstructure and possess improved properties with respect to their components. Furthermore, the design of their microstructure allows for tailoring their overall properties. In the last decades, intense work was performed on the synthesis of nanocomposites, which have the feature that at least one of their components is nanoscaled. However, the microstructure-property relationship of nanocomposite materials is still a challenging topic. This tutorial review paper deals with a special class of nanocomposites, i.e. polymer-derived ceramic nanocomposites (PDC-NCs), which have been shown to be promising materials for various structural and functional applications. Within this context, different preparative approaches for PDC-NCs as well as some of their properties will be presented and discussed. Furthermore, recent results concerning the relationship between the nano/microstructure of PDC-NCs and their properties will be highlighted.

  1. Preparation of freestanding GaN wafer by hydride vapor phase epitaxy on porous silicon

    Wu, Xian; Li, Peng; Liang, Renrong; Xiao, Lei; Xu, Jun; Wang, Jing

    2018-05-01

    A freestanding GaN wafer was prepared on porous Si (111) substrate using hydride vapor phase epitaxy (HVPE). To avoid undesirable effects of the porous surface on the crystallinity of the GaN, a GaN seed layer was first grown on the Si (111) bare wafer. A pattern with many apertures was fabricated in the GaN seed layer using lithography and etching processes. A porous layer was formed in the Si substrate immediately adjacent to the GaN seed layer by an anodic etching process. A 500-μm-thick GaN film was then grown on the patterned GaN seed layer using HVPE. The GaN film was separated from the Si substrate through the formation of cracks in the porous layer caused by thermal mismatch stress during the cooling stage of the HVPE. Finally, the GaN film was polished to obtain a freestanding GaN wafer.

  2. Preparation and characterisation of mixed silicon oxycarbide materials; Preparacion y caracterizacion de materiales de oxicarburo de silicio mixtos

    Tellez, L.; Tamayo, A.; Mazo, M. A.; Rubio, F.; Rubio, J.

    2010-07-01

    In this work different mixed Silicon oxicarbide materials have been prepared. Si, Si-Ti, Si-Zr and Si-Al oxicarbide materials have been obtained from pyrolisis at 1000 degree centigrade and 1300 degree centigrade of the respective preceramic materials. After pyrolisis X, D and T units of the oxycarbide structure have been observed in such materials. They show the presence of Si-C and Si-O bonds in a given material. The characterization has been carried out by means of FT-IR, Raman NMR {sup 2}9Si, NMR {sup 1}3C and XRD. The formation of Si-Ti, Si-Zr and Si-Al bonds has been estimated in accordance with the decrease of the Si-O-Si wave number observed in the FT-IR spectra. Si and Si-Ti oxycarbide materials do not lead to crystallisation after pyrolisis at highest temperatures, however for Si-Zr and Si-Al oxycarbide materials different crystalline phases have been observed. All pyrolised materials present free and carbidic carbon. After pyrolisis at 1300 degree centigrade the free carbon reacts with Si-O bonds to form SiC{sub 4} groups which must be assigned to nucleus of the {beta}-SiC crystals. (Author)

  3. Preparation and adsorption characteristics for heavy metals of active silicon adsorbent from leaching residue of lead-zinc tailings.

    Lei, Chang; Yan, Bo; Chen, Tao; Xiao, Xian-Ming

    2018-05-19

    To comprehensively reuse the leaching residue obtained from lead-zinc tailings, an active silicon adsorbent (ASA) was prepared from leaching residue and studied as an adsorbent for copper(II), lead(II), zinc(II), and cadmium(II) in this paper. The ASA was prepared by roasting the leaching residue with either a Na 2 CO 3 /residue ratio of 0.6:1 at 700 °C for 1 h or a CaCO 3 /residue ratio of 0.8:1 at 800 °C for 1 h. Under these conditions, the available SiO 2 content of the ASA was more than 20%. The adsorption behaviors of the metal ions onto the ASA were investigated and the Langmuir, Freundlich, and Dubinin-Radushkevich isotherm models were used to analyze the adsorption isotherm. The result showed that the maximum adsorption capacities of copper(II), lead(II), cadmium(II), and zinc(II) calculated by the Langmuir model were 3.40, 2.83, 0.66, and 0.62 mmol g -1 , respectively. The FT-IR spectra of the ASA and the mean free adsorption energies indicated that ion exchange was the mechanism of copper(II), lead(II), and cadmium(II) adsorption and that chemical reaction was the mechanism of zinc(II) adsorption. These results provide a method for reusing the leaching residue obtained from lead-zinc tailings and show that the ASA is an effective adsorbent for heavy metal pollution remediation.

  4. Preparation of superhydrophobic poly(methyl methacrylate)-silicon dioxide nanocomposite films

    Wang Jinyan [Key Laboratory of Ministry of Education for Special Functional Materials, Henan University, Jinming Road, Kaifeng, Henan Province 475004 (China); Chen Xinhua [Key Laboratory of Ministry of Education for Special Functional Materials, Henan University, Jinming Road, Kaifeng, Henan Province 475004 (China); College of Chemistry and Chemical Engineering, Xuchang University, Xuchang 461000 (China); Kang Yingke; Yang Guangbin; Yu Laigui [Key Laboratory of Ministry of Education for Special Functional Materials, Henan University, Jinming Road, Kaifeng, Henan Province 475004 (China); Zhang Pingyu, E-mail: pingyu@henu.edu.cn [Key Laboratory of Ministry of Education for Special Functional Materials, Henan University, Jinming Road, Kaifeng, Henan Province 475004 (China)

    2010-12-15

    Superhydrophobic poly(methyl methacrylate)-SiO{sub 2} (coded as PMMA-SiO{sub 2}) nanocomposite films with micro-nanohierarchical structure were prepared via a simple approach in the absence of low surface-energy compounds. By spin-coating the suspension of hydrophobic silica (SiO{sub 2}) nanoparticles dispersed in PMMA solution, target nanocomposite films were obtained on glass slides. The wetting behavior of PMMA-SiO{sub 2} nanocomposite films was investigated in relation to the dosage of SiO{sub 2} nanoparticles dispersed in PMMA solution. It was found that hydrophilic PMMA film was transferred to superhydrophobic PMMA-SiO{sub 2} nanocomposite films when hydrophobic SiO{sub 2} nanoparticles were introduced into the PMMA solution at a high enough dosage (0.2 g and above). Resultant PMMA-SiO{sub 2} nanocomposite films had a static water contact angle of above 162{sup o}, showing promising applications in selfcleaning and waterproof for outer wall of building, outer covering for automobile, sanitary wares, and so forth.

  5. Preparation of superhydrophobic poly(methyl methacrylate)-silicon dioxide nanocomposite films

    Wang Jinyan; Chen Xinhua; Kang Yingke; Yang Guangbin; Yu Laigui; Zhang Pingyu

    2010-01-01

    Superhydrophobic poly(methyl methacrylate)-SiO 2 (coded as PMMA-SiO 2 ) nanocomposite films with micro-nanohierarchical structure were prepared via a simple approach in the absence of low surface-energy compounds. By spin-coating the suspension of hydrophobic silica (SiO 2 ) nanoparticles dispersed in PMMA solution, target nanocomposite films were obtained on glass slides. The wetting behavior of PMMA-SiO 2 nanocomposite films was investigated in relation to the dosage of SiO 2 nanoparticles dispersed in PMMA solution. It was found that hydrophilic PMMA film was transferred to superhydrophobic PMMA-SiO 2 nanocomposite films when hydrophobic SiO 2 nanoparticles were introduced into the PMMA solution at a high enough dosage (0.2 g and above). Resultant PMMA-SiO 2 nanocomposite films had a static water contact angle of above 162 o , showing promising applications in selfcleaning and waterproof for outer wall of building, outer covering for automobile, sanitary wares, and so forth.

  6. Preparation and properties of silicone fouling release coatings with long-life afterglow fluorescent

    Zhang Zhanping

    2017-01-01

    Full Text Available Based on polydimethylsiloxane, three-component coatings were prepared with different content of luminescence powder. The results showed that the illuminance of coatings increases with the content of luminescence powder, decays exponentially with the afterglow time, increases exponentially with the increase of exposure time. The afterglow illuminance augments with irradiated light illuminance. All coatings are hydrophobic and oleophilic. Surface free energy decreases with the increase of luminescence powder. They have highest impact-resistance and bend flexibility. The luminescence powder does not change obviously the shore hardness, tensile breaking strength, breaking elongation rate, elastic modular and roughness of coatings. The static test panels in sea generally could be covered obviously by biofouling including sponges, bryophytes and mussels, hydra, kelp, green algae after 2 months of immersion during growing season. But it never found that the barnacle attached on the coating surface during 4 years of immersion test. The static anti-fouling ability of the coatings is very limited. In addition, the sea creatures attached on the coating surface can be easily removed; even attached organisms will fall off and expose again the smooth coating surface. Consequently, all coatings with long-life afterglow fluorescent have a significant effect on preventing adhesion of barnacle and fouling-release performance.

  7. Application of hydrogen-doped In2O3 transparent conductive oxide to thin-film microcrystalline Si solar cells

    Koida, Takashi; Sai, Hitoshi; Kondo, Michio

    2010-01-01

    Hydrogen-doped In 2 O 3 (IO:H) films with high electron mobility and improved near-infrared (NIR) transparency have been applied as a transparent conducting oxide (TCO) electrode in substrate-type hydrogenated microcrystalline silicon (μc-Si:H) solar cells. The incorporation of IO:H, instead of conventional Sn-doped In 2 O 3 , improved the short-circuit current density (J sc ) and the resulting conversion efficiency. Optical analysis of the solar cells and TCO films revealed that the improvement in J sc is due to the improved spectral sensitivity in the visible and NIR wavelengths by reduction of absorption loss caused by free carriers in the TCO films.

  8. Ferroelectrics onto silicon prepared by chemical solution deposition methods: from the thin film to the self-assembled systems

    Calzada, M. L.

    2006-06-01

    Full Text Available The work of the authors during the last years on ferroelectric thin and ultra-thin films deposited by Chemical Solution Deposition (CSD onto silicon based substrates is reviewed in this paper. Ferroelectric layers integrated with silicon substrates have potential use in the new micro/nanoelectronic devices. Two hot issues are here considered: 1 the use of low processing temperatures of the ferroelectric film, with the objective of not producing any damage on the different elements of the device heterostructure, and 2 the downscaling of the ferroelectric material with the aim of achieving the high densities of integration required in the next generation of nanoelectronic devices. The UV-assisted Rapid Thermal Processing has successfully been used in our laboratory for the fabrication of ferroelectric films at low temperatures. Preliminary results on the CSD preparation of nanosized ferroelectric structures are shown.

    Este artículo revisa el trabajo realizado por los autores durante los últimos años sobre lámina delgada y ultra-delgada ferroeléctrica preparada mediante el depósito químico de disoluciones (CSD sobre substratos de silicio. Las películas ferroeléctricas integradas con silicio tienen potenciales usos en los nuevos dispositivos micro/nanoelectrónicos. Dos aspectos claves son aquí considerados: 1 el uso de bajas temperaturas de procesado de la lámina ferroeléctrica, con el fin de no dañar los diferentes elementos que forman la heteroestructura del dispositivo y 2 la disminución de tamaño del material ferroeléctrico con el fin de conseguir las altas densidades de integración requeridas en la próxima generación de dispositivos nanoelectróncos. Los procesos térmicos rápidos asistidos con irradiación UV se están usando en nuestro laboratorio para conseguir la fabricación del material ferroeléctrico a temperaturas bajas compatibles con la tecnología del silicio. Se muestran resultados preliminares sobre

  9. Iron Oxide Nanoparticles Employed as Seeds for the Induction of Microcrystalline Diamond Synthesis

    Resto Oscar

    2008-01-01

    Full Text Available AbstractIron nanoparticles were employed to induce the synthesis of diamond on molybdenum, silicon, and quartz substrates. Diamond films were grown using conventional conditions for diamond synthesis by hot filament chemical vapor deposition, except that dispersed iron oxide nanoparticles replaced the seeding. X-ray diffraction, visible, and ultraviolet Raman Spectroscopy, energy-filtered transmission electron microscopy , electron energy-loss spectroscopy, and X-ray photoelectron spectroscopy (XPS were employed to study the carbon bonding nature of the films and to analyze the carbon clustering around the seed nanoparticles leading to diamond synthesis. The results indicate that iron oxide nanoparticles lose the O atoms, becoming thus active C traps that induce the formation of a dense region of trigonally and tetrahedrally bonded carbon around them with the ensuing precipitation of diamond-type bonds that develop into microcrystalline diamond films under chemical vapor deposition conditions. This approach to diamond induction can be combined with dip pen nanolithography for the selective deposition of diamond and diamond patterning while avoiding surface damage associated to diamond-seeding methods.

  10. Preparation and magnetic properties of Ni–P–La coating by electroless plating on silicon substrate

    Gao, Yun [Tianjin Key Laboratory of Composite and Functional Materials, School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); Wang, Jihui, E-mail: jhwang@tju.edu.cn [Tianjin Key Laboratory of Composite and Functional Materials, School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); Yuan, Jing [Tianjin Key Laboratory of Composite and Functional Materials, School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); College of Physics and Electronic Information Engineering, Qinghai University for Nationalities, Xining, Qinghai 810007 (China); Li, Haiqin [College of Physics and Electronic Information Engineering, Qinghai University for Nationalities, Xining, Qinghai 810007 (China)

    2016-02-28

    Graphical abstract: The content of Ni phase, which is the main ferromagnetic phase in Ni–P–La coating, is almost increased linearly with the concentration of La in plating solution. - Highlights: • The La element improves the magnetic properties of Ni–P–La coating. • Magnetism increases but the stability of bath decreases with La content and pH. • Coatings peel off at high temperature (≥80 °C) and magnetism is weak in short time. • The optimum is the La{sub 2}O{sub 3} of 10 mg L{sup −1}, pH of 5.0, temperature of 75 °C and time of 45 min. - Abstract: Ni–P–La coatings were prepared on Si substrate by electroless plating method under different La content, pH value, plating temperature and plating time. The surface morphology, chemical composition, structure and magnetic properties of coatings were observed and determined by scanning electron microscope (SEM), energy dispersive X-ray spectrometry (EDS), X-ray diffractometer (XRD) and vibrating sample magnetometer (VSM). The results showed that Ni–P–La coating is smooth and uniform with a cellular morphology grown in columnar manner. With the increase of La content, pH value and plating time, the thickness and saturation magnetization of coating are increased continuously, but the stability of plating bath is decreased greatly with La content and pH value. Under higher plating temperature, the thickness and saturation magnetization of coatings are obviously enhanced. But too high plating temperature is harmful to the plating bath and coating. The optimum plating conditions for Ni–P–La coating is La{sub 2}O{sub 3} addition of 10 mg L{sup −1}, pH value of 5.0, plating temperature of 75 °C and plating time of 45 min. The role of La element is to benefit the deposition of Ni element, promote the formation of Ni phase during the annealing process, and thus improve the magnetic properties of Ni–P–La coating.

  11. EPR response of sucrose and microcrystalline cellulose to measure high doses of gamma radiation; Respuesta EPR de sacarosa y celulosa micro cristalina para medir altas dosis de radiacion gamma

    Torijano, E.; Cruz, L.; Gutierrez, G.; Azorin, J.; Aguirre, F. [Universidad Autonoma Metropolitana, Unidad Iztapalapa, Av. San Rafael Atlixco 186, Col. Vicentina, 09340 Mexico D. F. (Mexico); Cruz Z, E., E-mail: eftc@xanum.uam.mx [UNAM, Instituto de Ciencias Nucleares, Circuito Exterior, Ciudad Universitaria, 04510 Mexico D. F. (Mexico)

    2015-10-15

    Solid dosimeters of sucrose and microcrystalline cellulose (Avicel Ph-102) were prepared, following the same process, in order to compare their EPR response against that of the l-alanine dosimeters considered as reference. All lots of dosimeters were irradiated with gamma radiation in Gamma beam irradiator with 8 kGy/h of the Nuclear Sciences Institute of UNAM. Doses ranged from 1 to 10 kGy respectively. We found that both the response of sucrose as microcrystalline cellulose were linear; however, the response intensity was, on average, twenty times more for sucrose. Comparing this against the EPR response of l-alanine in the range of doses, it was found that the response to sucrose is a third part; and microcrystalline cellulose is a sixtieth, approximately. The results agree with those found in the literature for sucrose, leaving open the possibility of investigating other dosage ranges for cellulose. (Author)

  12. Surface studies of microcrystalline chitosan/poly(vinyl alcohol) mixtures

    Lewandowska, Katarzyna, E-mail: reol@chem.uni.torun.pl [Nicolaus Copernicus University, Faculty of Chemistry, Chair of Chemistry and Photochemistry of Polymers, 7 Gagarin Street, 87-100 Torun (Poland)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer The surface properties were investigated by AFM, SEM and FTIR. Black-Right-Pointing-Pointer The AFM images showed the lamellar structure of PVA in the blend. Black-Right-Pointing-Pointer SEM microscopy confirmed the existence of microphase separation of components. Black-Right-Pointing-Pointer FTIR analysis showed the existence of a weak interaction. - Abstract: In the present study, the surface properties of microcrystalline chitosan (MCCh), poly(vinyl alcohol) (PVA) and MCCh/PVA blends (made from acetic acid solutions with the MCCh concentration ranging from 20% to 80%) have been studied by the tapping-mode atomic force microscopy (AFM), scanning electron microscopy (SEM) and Fourier transform infrared (FTIR) spectroscopy. The changes of topography images are considered by determining the root mean square (RMS, R{sub q}) deviation in the image data. For PVA samples, the transition between adjacent lamellae occurs through holes, islands, and bicontinuous structures. The AFM images showed also the lamellar structure of PVA in the blend. The crystalline topography of MCCh/PVA film surface suggests the presence of PVA on the top surface. The FTIR spectra of film blends, in the amide I and II region of MCCh and the hydroxyl stretching bands of PVA have been analyzed. FTIR analysis showed the existence of a weak interaction of the hydroxyl or amino groups of microcrystalline chitosan with hydroxyl groups of PVA.

  13. Some historical remarks on microcrystalline arthritis (gout and chondrocalcinosis

    G. Pasero

    2012-01-01

    Full Text Available The history of microcrystalline arthritis only began in 1961 when Daniel McCarty and Joseph Lee Hollander demonstrated the presence of sodium monourate crystals in the synovial fluid of gouty patients. However, gout is a historical disease, thanks to the descriptions of Hippocrates, Caelius Aurelianus, Soranus of Ephesus and Araeteus of Cappadocia. The relationship between hyperuricemia and gout was first documented in the nineteenth century by Alfred Baring Garrod, who demonstrated deposits of uric acid crystals on a linen thread held dipped in acidified blood (the so-called “thread method”. Gout has always been considered a prerogative of the moneyed classes (arthritis divitum, and history is full of famous gouty personalities, including kings, emperors, popes, commanders, politicians, artists, writers, philosophers and scientists. Another form of microcrystalline arthritis, chondrocalcinosis, was identified as being a rheumatic disorder different from gout in the 1960s. As a specific clinical entity, it was first identified in 1958 by Dušan Žitnˇan and Štefan Sit’aj in a few Slovak families.

  14. Charge transport properties in microcrystalline KDyFe(China)6

    Aubert, P.H.; Goubard, F.; Chevrot, C.; Tabuteau, A.

    2007-01-01

    Microcrystalline solid dysprosium(III) hexacyanoferrate(II) was synthesized by co-precipitation in aqueous solution. The resulting solid has been studied by Fourier transform infrared spectroscopy, X-ray analysis and solid state electrochemistry. The use of a cavity microelectrode was necessary to explore a wide range of time scale and minimize the (undesired) capacitive currents. Cyclic voltametric experiments were very helpful to understand the kinetic of charge transfer in such microstructure. A structure-properties relationship has been established from the crystallographic and the electrochemical properties. A square-scheme is presented to explain the unique electrochemical behavior of hexacyanoferrate containing dysprosium since this compound exhibits a second redox system. The solid presents an open channel-like morphology in which the motion of charged species occurs during the redox processes. Precisely, the electronic transfer is accompanied by a cation diffusion inside the microcrystalline structure. The size of these channels strongly suggests that the kinetic of charge transfer is limited by the cation transport into these structures. - Graphical abstract: Dy and Fe polyhedra packing in the cell of KDyFe(China) 6 .3.5H 2 O shows occluded water molecules and potassium ions forming a pseudohexagonal 2D sub-lattice connected to each other by diffusion channels

  15. Surface studies of microcrystalline chitosan/poly(vinyl alcohol) mixtures

    Lewandowska, Katarzyna

    2012-01-01

    Highlights: ► The surface properties were investigated by AFM, SEM and FTIR. ► The AFM images showed the lamellar structure of PVA in the blend. ► SEM microscopy confirmed the existence of microphase separation of components. ► FTIR analysis showed the existence of a weak interaction. - Abstract: In the present study, the surface properties of microcrystalline chitosan (MCCh), poly(vinyl alcohol) (PVA) and MCCh/PVA blends (made from acetic acid solutions with the MCCh concentration ranging from 20% to 80%) have been studied by the tapping-mode atomic force microscopy (AFM), scanning electron microscopy (SEM) and Fourier transform infrared (FTIR) spectroscopy. The changes of topography images are considered by determining the root mean square (RMS, R q ) deviation in the image data. For PVA samples, the transition between adjacent lamellae occurs through holes, islands, and bicontinuous structures. The AFM images showed also the lamellar structure of PVA in the blend. The crystalline topography of MCCh/PVA film surface suggests the presence of PVA on the top surface. The FTIR spectra of film blends, in the amide I and II region of MCCh and the hydroxyl stretching bands of PVA have been analyzed. FTIR analysis showed the existence of a weak interaction of the hydroxyl or amino groups of microcrystalline chitosan with hydroxyl groups of PVA.

  16. Morphology-controlled electrodeposition of Cu2O microcrystalline particle films for application in photocatalysis under sunlight

    Wu, Guodong; Zhai, Wei; Sun, Fengqiang; Chen, Wei; Pan, Zizhao; Li, Weishan

    2012-01-01

    Graphical abstract: Display Omitted Highlights: ► PEG was used to electro-deposit Cu 2 O microcrystalline particle films. ► Morphologies of Cu 2 O microcrystals could be controlled by the amount of PEG. ► The films showed regularly varied photocatalytic activities under sunlight. ► The films could be recycled and showed stable activities. -- Abstract: Morphology-controlled Cu 2 O microcrystalline particle films had been successfully electrodeposited on tin-doped indium oxide glass substrates in CuSO 4 solutions containing different amounts of polyethylene glycol (PEG) additives. With an increase of PEG, microcrystals gradually changed from irregular shapes to cubes, octahedrons, and spherical shapes. Sizes increasingly became smaller with an increase of PEG under the same deposition time. These films had been first used as recyclable photocatalysts and showed excellent and photocatalytic activities in photodegradation of methylene blue (MB) under sunlight. Activities were regularly varied relative to the morphologies of films controlled by the amount of PEG and could be further enhanced by adding a little amount of hydrogen peroxide in the MB solution. The method for controllable preparation of Cu 2 O microcrystals with photocatalytic activities was simple and inexpensive. The as-prepared particle films could also be used in photodegradation of many other pollutants under sunlight.

  17. Preparation and characterization of flame retardant n-hexadecane/silicon dioxide composites as thermal energy storage materials.

    Fang, Guiyin; Li, Hui; Chen, Zhi; Liu, Xu

    2010-09-15

    Flame retardant n-hexadecane/silicon dioxide (SiO(2)) composites as thermal energy storage materials were prepared using sol-gel methods. In the composites, n-hexadecane was used as the phase change material for thermal energy storage, and SiO(2) acted as the supporting material that is fire resistant. In order to further improve flame retardant property of the composites, the expanded graphite (EG) was added in the composites. Fourier transformation infrared spectroscope (FT-IR), X-ray diffractometer (XRD) and scanning electronic microscope (SEM) were used to determine chemical structure, crystalloid phase and microstructure of flame retardant n-hexadecane/SiO(2) composites, respectively. The thermal properties and thermal stability were investigated by a differential scanning calorimeter (DSC) and a thermogravimetric analysis apparatus (TGA), respectively. The SEM results showed that the n-hexadecane was well dispersed in the porous network of the SiO(2). The DSC results indicated that the melting and solidifying latent heats of the composites are 147.58 and 145.10 kJ/kg when the mass percentage of the n-hexadecane in the composites is 73.3%. The TGA results showed that the loading of the EG increased the charred residue amount of the composites at 700 degrees C, contributing to the improved thermal stability of the composites. It was observed from SEM photographs that the homogeneous and compact charred residue structure after combustion improved the flammability of the composites. Copyright 2010 Elsevier B.V. All rights reserved.

  18. Silicon-organic pigment material hybrids for photovoltaic application

    Mayer, T.; Weiler, U.; Jaegermann, W. [Institute of Materials Science, Darmstadt University of Technology, Petersenstreet 23, D-64287 Darmstadt (Germany); Kelting, C.; Schlettwein, D. [Institute for Applied Physics, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen (Germany); Makarov, S.; Woehrle, D. [Institute of Organic and Macromolecular Chemistry, University Bremen, Leobener Street NW II, D-28359 Bremen (Germany); Abdallah, O.; Kunst, M. [Department Solar Energy, Hahn-Meitner-Institute, D-14109 Berlin (Germany)

    2007-12-14

    Hybrid materials of silicon and organic dyes have been investigated for possible application as photovoltaic material in thin film solar cells. High conversion efficiency is expected from the combination of the advantages of organic dyes for light absorption and those of silicon for charge carrier separation and transport. Low temperature remote hot wire chemical vapor deposition (HWCVD) was developed for microcrystalline silicon ({mu}c-Si) deposition using SiH{sub 4}/H{sub 2} mixtures. As model dyes zinc phthalocyanines have been evaporated from Knudsen type sources. Layers of dye on {mu}c-Si and {mu}c-Si on dye films, and composites of simultaneously and sequentially deposited Si and dye have been prepared and characterized. Raman, absorption, and photoemission spectroscopy prove the stability of the organic molecules against the rough HWCVD-Si process. Transient microwave conductivity (TRMC) indicates good electronic quality of the {mu}c-Si matrix. Energy transfer from dye to Si is indicated indirectly by luminescence and directly by photoconductivity measurements. F{sub x}ZnPc pigments with x=0,4,8,16 have been synthesized, purified and adsorbed onto H-terminated Si(1 1 1) for electronic state line up determination by photoelectron spectroscopy. For x=4 and 8 the dye frontier orbitals line up symmetrically versus the Si energy gap offering similar energetic driving forces for electron and hole injection, which is considered optimum for bulk sensitization and indicates a direction to improve the optoelectronic coupling of the organic dyes to silicon. (author)

  19. Mass-producible method for preparation of a carbon-coated graphite@plasma nano-silicon@carbon composite with enhanced performance as lithium ion battery anode

    Chen, Hedong; Wang, Zhoulu; Hou, Xianhua; Fu, Lijun; Wang, Shaofeng; Hu, Xiaoqiao; Qin, Haiqing; Wu, Yuping

    2017-01-01

    Carbon-coated core-shell structure artificial graphite@plasma nano-silicon@carbon (AG@PNSi@C) composite, applying as lithium ion battery anode material, has been prepared via spray drying method. The plasma nano-silicon (<100 nm), which contained amorphous silicon, was synthesized by radio frequency induction plasma system with the high temperatures processing capability and high quench rates. The artificial graphite in the composite acts as the core which supports the particle and provides electroconductivity, while PNSi attached on the surface of the core, enhances the specific capacity of the composite. The as prepared composite shows superior performance as anode in lithium-ion batteries, regarding to the initial Coulombic efficiency and cycle life. The initial Coulombic efficiency of AG@PNSi@C electrode is 81.0% with a discharge capacity of 553 mAh g −1 and a recharge capacity of 448 mAh g −1 . During cycling, AG@PNSi@C exhibits excellent performance with a very low capacity fading that the discharge capacity maintains 498.2 mAh g −1 and 449.4 mAh g −1 after 250 cycles and 500 cycles. AG@PNSi@C also shows enhanced resistance against high current density. Besides the remarkable electrochemical performances, the facile and mass-producible synthesis process makes the AG@PNSi@C composite very promising for its application in lithium-ion batteries.

  20. Evaluation of Chitosan-Microcrystalline Cellulose Blends as Direct Compression Excipients

    Emmanuel O. Olorunsola

    2017-01-01

    Full Text Available This study was aimed at evaluating chitosan-microcrystalline cellulose blends as direct compression excipients. Crab shell chitosan, α-lactose monohydrate, and microcrystalline cellulose powders were characterized. Blends of the microcrystalline cellulose and chitosan in ratios 9 : 1, 4 : 1, 2 : 1, and 1 : 1 as direct compression excipients were made to constitute 60% of metronidazole tablets. Similar tablets containing blends of the microcrystalline cellulose and α-lactose monohydrate as well as those containing pure microcrystalline cellulose were also produced. The compact density, tensile strength, porosity, disintegration time, and dissolution rate of tablets were determined. Chitosan had higher moisture content (7.66% and higher moisture sorption capacity (1.33% compared to microcrystalline cellulose and lactose. It also showed better flow properties (Carr’s index of 18.9% and Hausner’s ratio of 1.23. Compact density of tablets increased but tensile strength decreased with increase in the proportion of chitosan in the binary mixtures. In contrast to lactose, the disintegration time increased and the dissolution rate decreased with increase in the proportion of chitosan. This study has shown that chitosan promotes flowability of powder mix and rapid disintegration of tablet. However, incorporation of equal proportions of microcrystalline cellulose and chitosan leads to production of extended-release tablet. Therefore, chitosan promotes tablet disintegration at low concentration and enables extended-release at higher concentration.

  1. Physicotechnical, spectroscopic and thermogravimetric properties of powdered cellulose and microcrystalline cellulose derived from groundnut shells

    Chukwuemeka P. Azubuike

    2012-09-01

    Full Text Available α-Cellulose and microcrystalline cellulose powders, derived from agricultural waste products, that have for the pharmaceutical industry, desirable physical (flow properties were investigated. α–Cellulose (GCN was extracted from groundnut shell (an agricultural waste product using a non-dissolving method based on inorganic reagents. Modification of this α -cellulose was carried out by partially hydrolysing it with 2N hydrochloric acid under reflux to obtain microcrystalline cellulose (MCGN. The physical, spectroscopic and thermal properties of the derived α-cellulose and microcrystalline cellulose powders were compared with Avicel® PH 101, a commercial brand of microcrystalline cellulose (MCCA, using standard methods. X-ray diffraction and infrared spectroscopy analysis showed that the α-cellulose had lower crystallinity. This suggested that treatment with 2N hydrochloric acid led to an increase in the crystallinity index. Thermogravimetric analysis showed quite similar thermal behavior for all cellulose samples, although the α-cellulose had a somewhat lower stability. A comparison of the physical properties between the microcrystalline celluloses and the α-cellulose suggests that microcrystalline cellulose (MCGN and MCCA might have better flow properties. In almost all cases, MCGN and MCCA had similar characteristics. Since groundnut shells are agricultural waste products, its utilization as a source of microcrystalline cellulose might be a good low-cost alternative to the more expensive commercial brand.

  2. MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

    Amornrat Limmanee

    2014-01-01

    Full Text Available We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc and low fill factor (FF; however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H film is preferable for the deposition on the surface of MOCVD ZnO film rather than the microcrystalline film due to its less sensitivity to textured surface, and this allowed an improvement in the FF. The n-i-p flexible amorphous silicon solar cell using the MOCVD ZnO/screen printed Ag back reflector showed an initial efficiency of 6.2% with Voc=0.86 V, Jsc=12.4 mA/cm2, and FF = 0.58 (1 cm2. The identical quantum efficiency and comparable performance to the cells using conventional sputtered Ag back electrode have verified the potential of the MOCVD ZnO/screen printed Ag back reflector and possible opportunity to use the screen printed Ag thick film for flexible thin film silicon solar cells.

  3. Antibacterial Modification of Microcrystalline Cellulose by Grafting Copolymerization

    Ying Liu

    2015-11-01

    Full Text Available Microcrystalline cellulose (MCC has the advantage of a high specific surface area as compared to that of conventional cellulose fibers. In this study the monomer methacrylamide (MAM was used to treat MCC by grafting copolymerization. SEM, FTIR, and solid 13C NMR were used to characterize the morphology and composition of MAM-g-MCC. After the chlorination of MAM-g-MCC with 10% sodium hypochlorite solution, the grafted MCC exhibited antibacterial activity as a result of the formation of N-Cl bonds. The thermal stability, antibacterial ability, and storage stability of chlorinated MAM-g-MCC were also studied. The results showed that the chlorinated MAM-g-MCC had excellent storage stability and could inactivate all S. aureus and E. coli O157:H7 within 10 min.

  4. Dielectric barrier discharge plasma pretreatment on hydrolysis of microcrystalline cellulose

    Huang, Fangmin; Long, Zhouyang; Liu, Sa; Qin, Zhenglong

    2017-04-01

    Dielectric barrier discharge (DBD) plasma was used as a pretreatment method for downstream hydrolysis of microcrystalline cellulose (MCC). The degree of polymerization (DP) of MCC decreased after it was pretreated by DBD plasma under a carrier gas of air/argon. The effectiveness of depolymerization was found to be influenced by the crystallinity of MCC when under the pretreatment of DBD plasma. With the addition of tert-butyl alcohol in the treated MCC water suspension solution, depolymerization effectiveness of MCC was inhibited. When MCC was pretreated by DBD plasma for 30 min, the total reducing sugar concentration (TRSC) and liquefaction yield (LY) of pretreated-MCC (PMCC) increased by 82.98% and 34.18% respectively compared with those for raw MCC.

  5. Modification and characterization of microcrystalline cellulose with succinic anhydride

    Santos, Clecio M.R.; Santos, Douglas C.; Freitas, Gizele B.; Cardoso, Giselia

    2011-01-01

    Cellulose is a natural polymer, non-toxic, biodegradable and renewable source. With increasing global attention to environmental problems, the chemical modification of cellulose has been evaluated with increasing applicability in various industrial sectors. The cellulose can be chemical modified through the hydroxyl present in their molecules. This paper aims to present the main results in the modification of microcrystalline cellulose. The sample was pure and modified chemically and morphologically characterized by absorption spectroscopy in the infrared (IR) and showed the band in the 1551cm -1 characterization modification made, X-ray diffraction (XRD) where it was observed that the change led to a reduction significant crystallinity, and determination of average pore radius through the analyzer porosity and surface area resulting in values of 6.97 angstrom for pure sample and 8.62 angstrom for the modified. In addition to these tests we determined the average degree of substitution finding the value of 1.67. (author)

  6. Green synthesis of hybrid graphene oxide/microcrystalline cellulose aerogels and their use as superabsorbents

    Wei, Xiao; Huang, Ting; Yang, Jing-hui; Zhang, Nan; Wang, Yong; Zhou, Zuo-wan

    2017-01-01

    Highlights: • Hybrid GO/MCC aerogels were prepared using LiBr aqueous solution as the solvent. • GO was exfoliated by MCC through the strong interaction between them. • The adsorption ability of GO per unit mass in the hybrid aerogels was greatly enhanced. - Abstract: In this work, we developed a green synthesis method to prepare the hybrid aerogels containing graphene oxide (GO) and microcrystalline cellulose (MCC) using lithium bromide (LiBr) aqueous solution as the solvent, which insured the complete dissolution of MCC. The interaction between GO and MCC was investigated through different methods The results demonstrate that there is a strong interaction between GO and MCC molecules, which promotes the exfoliation of GO in the hybrid aerogels. The hybrid GO/MCC aerogels exhibit typical three dimensional porous structure and the pore morphology can be well adjusted by changing the content of GO. The adsorption ability of the hybrid aerogels was measured using methylene blue (MB) as an adsorbate. The results show that the adsorption ability of GO per unit mass is greatly enhanced compared with the pure GO aerogel, especially at relatively low GO content the adsorption amount of GO per unit mass is enhanced up to 2630 mg/g. Further results demonstrate that the hybrid GO/MCC aerogels still obey the pseudo-second-order adsorption model, which is similar to that of the pure GO aerogel. The mechanism for the amplified adsorption ability of GO in the hybrid GO/MCC aerogels is then analyzed.

  7. Green synthesis of hybrid graphene oxide/microcrystalline cellulose aerogels and their use as superabsorbents

    Wei, Xiao; Huang, Ting; Yang, Jing-hui; Zhang, Nan; Wang, Yong, E-mail: yongwang1976@163.com; Zhou, Zuo-wan

    2017-08-05

    Highlights: • Hybrid GO/MCC aerogels were prepared using LiBr aqueous solution as the solvent. • GO was exfoliated by MCC through the strong interaction between them. • The adsorption ability of GO per unit mass in the hybrid aerogels was greatly enhanced. - Abstract: In this work, we developed a green synthesis method to prepare the hybrid aerogels containing graphene oxide (GO) and microcrystalline cellulose (MCC) using lithium bromide (LiBr) aqueous solution as the solvent, which insured the complete dissolution of MCC. The interaction between GO and MCC was investigated through different methods The results demonstrate that there is a strong interaction between GO and MCC molecules, which promotes the exfoliation of GO in the hybrid aerogels. The hybrid GO/MCC aerogels exhibit typical three dimensional porous structure and the pore morphology can be well adjusted by changing the content of GO. The adsorption ability of the hybrid aerogels was measured using methylene blue (MB) as an adsorbate. The results show that the adsorption ability of GO per unit mass is greatly enhanced compared with the pure GO aerogel, especially at relatively low GO content the adsorption amount of GO per unit mass is enhanced up to 2630 mg/g. Further results demonstrate that the hybrid GO/MCC aerogels still obey the pseudo-second-order adsorption model, which is similar to that of the pure GO aerogel. The mechanism for the amplified adsorption ability of GO in the hybrid GO/MCC aerogels is then analyzed.

  8. Production of Starch Based Bioplastic from Cassava Peel Reinforced with Microcrystalline Celllulose Avicel PH101 Using Sorbitol as Plasticizer

    Maulida; Siagian, M; Tarigan, P

    2016-01-01

    The production of starch based bioplastics from cassava peel reeinforced with microcrystalline cellulose using sorbitol as plasticizer were investigated. Physical properties of bioplastics were determined by density, water uptake, tensile strength and Fourier Transform Infrared Spectroscopy. Bioplastics were prepared from cassava peel starch plasticized using sorbitol with variation of 20; 25; 30% (wt/v of sorbitol to starch) reinforced with microcrystalline celllulose (MCC) Avicel PH101 fillers with range of 0 to 6% (wt/wt of MCC to starch). The results showed improvement in tensile strength with higher MCC content up to 9, 12 mpa compared to non-reinforced bioplastics. This could be mainly attributed to the strong hydrogen bonds between MCC and starch. On the contrary, the addition of MCC decreased the elongation at break, density and water uptake. Fourier Transform Infrared Spectroscopy showed the functional groups of bioplastics, which the majority of O-H groups were found at the bioplastics with reinforcing filler MCC that represented substantial hydrogen bonds. The highest tensile strength value was obtained for bioplastic with MCC content 6% and sorbitol content 20%. With good adhesion between MCC and starch the production of bioplastics could be widely used as a substitute for conventional plastics with more benefits to the environment. (paper)

  9. Production of Starch Based Bioplastic from Cassava Peel Reinforced with Microcrystalline Celllulose Avicel PH101 Using Sorbitol as Plasticizer

    Maulida; Siagian, M.; Tarigan, P.

    2016-04-01

    The production of starch based bioplastics from cassava peel reeinforced with microcrystalline cellulose using sorbitol as plasticizer were investigated. Physical properties of bioplastics were determined by density, water uptake, tensile strength and Fourier Transform Infrared Spectroscopy. Bioplastics were prepared from cassava peel starch plasticized using sorbitol with variation of 20; 25; 30% (wt/v of sorbitol to starch) reinforced with microcrystalline celllulose (MCC) Avicel PH101 fillers with range of 0 to 6% (wt/wt of MCC to starch). The results showed improvement in tensile strength with higher MCC content up to 9, 12 mpa compared to non-reinforced bioplastics. This could be mainly attributed to the strong hydrogen bonds between MCC and starch. On the contrary, the addition of MCC decreased the elongation at break, density and water uptake. Fourier Transform Infrared Spectroscopy showed the functional groups of bioplastics, which the majority of O-H groups were found at the bioplastics with reinforcing filler MCC that represented substantial hydrogen bonds. The highest tensile strength value was obtained for bioplastic with MCC content 6% and sorbitol content 20%. With good adhesion between MCC and starch the production of bioplastics could be widely used as a substitute for conventional plastics with more benefits to the environment.

  10. Synthesis and luminescence properties of YVO4:Eu3+ cobblestone - like microcrystalline phosphors obtained from the mixed solvent - thermal method

    Xiao Xiuzhen; Lu Guanzhong; Shen Shaodian; Mao Dongsen; Guo Yun; Wang Yanqin

    2011-01-01

    The mixed solvent-thermal method has been developed for the synthesis of YVO 4 :Eu 3+ luminescent materials in the N, N-dimethylformamide (DMF)/ de-ionized water (DIW) solution. The samples have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electronic microscope (TEM), UV/vis absorption and photoluminescence spectroscopies. The results demonstrate that we have obtained the uniform YVO 4 :Eu 3+ cobblestone - like microcrystalline phosphors in the mixed solution of DMF and DIW, which are different to the as-obtained YVO 4 :Eu 3+ nanoparticles in pure DIW. And the as - prepared YVO 4 :Eu 3+ microcrystalline particles are composed of numerous nanoparticles. The assembling phenomenon of the nanoparticles is strongly affected by the pH value of the solution and the volume ratio of DMF/DIW. Under UV excitation, the samples can emit the bright red light. While, the photoluminescence (PL) intensities of YVO 4 :Eu 3+ show some difference for samples obtained under the different reaction conditions. This is because that different microstructures of samples result in different combinative abilities between the surface and the adsorbed species so as to produce the different quenching abilities to the emission from Eu 3+ ions.

  11. [A study of the properties of tablets from mixtures of two size degrees of alpha-lactose monohydrate and microcrystalline cellulose].

    Muzíková, J

    2006-03-01

    The paper examines the strength and disintegration time of compacts from the mixtures of two types of Tablettosas. Tablettosa 70 and Tablettosa 100 with microcrystalline cellulose represented by Vivapur 102. The mixtures of dry binders were prepared in the ratios of 3:1, 1:1, and 1:3. The effect of two concentrations of the lubricant magnesium stearate on the strength and disintegration time of compacts was also examined. Tablet strength increased with higher representation of microcrystalline cellulose in the mixture, and decreased with higher stearate concentration. The compacts from the mixtures with Tablettosa 100 showed higher strength. Disintegration time was highest in the compacts with the largest perccintage of microcrystalline cellulose, and longer in the case of the mixtures with Tablettosa 100. Stearate did not exert a negative effect on disintegration time. In the mixtures of Tablettosas with Vivapur 102 in a ratio of 1:1, the effect of the model active ingredient acetylsalicylic acid on the above-mentioned properties of tablets was tested. acetylsalicylic acid produced a further decrease in the strength of compacts and shortened the disintegration time in more instances in the cased of the mixtures with Tahlettosa 100.

  12. High quality β-FeSi2 thin films prepared on silicon (100) by using pulsed laser ablation of Fe target

    Xu, S.C.; Yang, C.; Liu, M.; Jiang, S.Z.; Ma, Y.Y.; Chen, C.S.; Gao, X.G.; Sun, Z.C.; Hu, B.; Wang, C.C.; Man, B.Y.

    2012-01-01

    High quality β-FeSi 2 thin films have been fabricated on silicon (100) substrate by the pulsed laser deposition (PLD) technique with the Fe and sintered FeSi 2 targets. The crystalline quality and surface morphology of the samples were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy. These results indicate that the samples prepared with a Fe target can acquire a better crystalline quality and a smoother surface than those with a sintered FeSi 2 target. The reasons were discussed with subsurface superheating mechanism. The intrinsic PL spectrum attributed to the interband transition of β-FeSi 2 for all the samples was compared, showing that the film prepared with Fe target can acquire a good PL property by optimizing experimental parameters. It is suggested that sputtering Fe on Si substrate by the pulsed laser offers a cheap and convenient way to prepare the β-FeSi 2 thin films. -- Highlights: ► β-FeSi 2 films were fabricated by PLD technique with the Fe and FeSi 2 targets. ► The films prepared with Fe target have good crystalline quality and smooth surface. ► The Fe target prepared film acquired a high PL intensity. ► Sputtering Fe on Si substrate offers a convenient way to prepare the β-FeSi 2 films.

  13. Studies on Hydrotreating Process of Microcrystalline Wax Produced from Marine Belayim Crude Oil

    EI Karashi, S.; Marawan, H.

    2004-01-01

    Abstract Microcrystalline wax was produced from solvent dewaxing process of vacuum residue raffinate produced from Marine Belayim origin. The untreated microcrystalline wax contains trace amounts of sulfur, oxygen, nitrogen and organometallic compounds as well as heavy aromatics which affect the properties of wax applications in pharmaceutical and technical fields . Microcrystalline wax hydrotreating process was studied using digital controlled unit and Ni O-MoO 3 / Al 2 O 3 catalyst, where operating parameters that controlled the efficiency of the hydrotreated wax were studied separately at different values including reactor temperature, reactor pressure, liquid hourly space velocity and hydrogen to hydrocarbon ratio . Hydrotreated microcrystalline wax at operating conditions (temperature 300 degree C, pressure 73 kg/cm 2 , LHS V 0.52 h-l and H 2 /HC ratio 266.6 Nm 3 /m 3 ) has the best quality to be used as food grade wax

  14. Thermal Infrared Spectra of Microcrystalline Sedimentary Phases: Effects of Natural Surface Roughness on Spectral Feature Shape

    Hardgrove, C.; Rogers, A. D.

    2012-03-01

    Thermal infrared spectral features of common microcrystalline phases (chert, alabaster, micrite) are presented. Spectra are sensitive to mineralogy and micron-scale (~1-25 µm) surface roughness. Roughness is on the scale of the average crystal size.

  15. Influence of the doping level on the porosity of silicon nanowires prepared by metal-assisted chemical etching

    Geyer, Nadine; Wollschläger, Nicole; Tonkikh, Alexander; Berger, Andreas; Werner, Peter; Fuhrmann, Bodo; Leipner, Hartmut S; Jungmann, Marco; Krause-Rehberg, Reinhard

    2015-01-01

    A systematic method to control the porosity of silicon nanowires is presented. This method is based on metal-assisted chemical etching (MACE) and takes advantage of an HF/H_2O_2 etching solution and a silver catalyst in the form of a thin patterned film deposited on a doped silicon wafer. It is found that the porosity of the etched nanowires can be controlled by the doping level of the wafer. For low doping concentrations, the wires are primarily crystalline and surrounded by only a very thin layer of porous silicon (pSi) layer, while for highly doped silicon, they are porous in their entire volume. We performed a series of controlled experiments to conclude that there exists a well-defined critical doping concentration separating the crystalline and porous regimes. Furthermore, transmission electron microscopy investigations showed that the pSi has also a crystalline morphology on a length scale smaller than the pore size, determined from positron annihilation lifetime spectroscopy to be mesoscopic. Based on the experimental evidence, we devise a theoretical model of the pSi formation during MACE and apply it for better control of the nanowire morphology. (paper)

  16. Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

    Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi [Nagaoka Univ. of Technology, Extreme Energy-Density Research Inst., Nagaoka, Niigata (Japan)

    2002-06-01

    The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

  17. Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

    Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi

    2002-01-01

    The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

  18. Influence of silicon on hot-dip aluminizing process and subsequent oxidation for preparing hydrogen/tritium permeation barrier

    Han, Shilei; Li, Hualing; Wang, Shumao; Jiang, Lijun; Liu, Xiaopeng [Energy Materials and Technology Research Institute, General Research Institute for Nonferrous Metals, Beijing 100088 (China)

    2010-04-15

    The development of the International Thermonuclear Experimental Reactor (ITER) requires the production of a material capable of acting as a hydrogen/tritium permeation barrier on low activation steel. It is well known that thin alumina layer can reduce the hydrogen permeation rate by several orders of magnitude. A technology is introduced here to form a ductile Fe/Al intermetallic layer on the steel with an alumina over-layer. This technology, consisting of two main steps, hot-dip aluminizing (HDA) and subsequent oxidation behavior, seems to be a promising coating method to fulfill the required goals. According to the experiments that have been done in pure Al, the coatings were inhomogeneous and too thick. Additionally, a large number of cracks and porous band could be observed. In order to solve these problems, the element silicon was added to the aluminum melt with a nominal composition. The influence of silicon on the aluminizing and following oxidation process was investigated. With the addition of silicon into the aluminum melt, the coating became thinner and more homogeneous. The effort of the silicon on the oxidation behavior was observed as well concerning the suppression of porous band and cracks. (author)

  19. Applicability of low-melting-point microcrystalline wax to develop temperature-sensitive formulations.

    Matsumoto, Kohei; Kimura, Shin-Ichiro; Iwao, Yasunori; Itai, Shigeru

    2017-10-30

    Low-melting-point substances are widely used to develop temperature-sensitive formulations. In this study, we focused on microcrystalline wax (MCW) as a low-melting-point substance. We evaluated the drug release behavior of wax matrix (WM) particles using various MCW under various temperature conditions. WM particles containing acetaminophen were prepared using a spray congealing technique. In the dissolution test at 37°C, WM particles containing low-melting-point MCWs whose melting was starting at approx. 40°C (Hi-Mic-1045 or 1070) released the drug initially followed by the release of only a small amount. On the other hand, in the dissolution test at 20 and 25°C for WM particles containing Hi-Mic-1045 and at 20, 25, and 30°C for that containing Hi-Mic-1070, both WM particles showed faster drug release than at 37°C. The characteristic drug release suppression of WM particles containing low-melting-point MCWs at 37°C was thought attributable to MCW melting, as evidenced by differential scanning calorimetry analysis and powder X-ray diffraction analysis. Taken together, low-melting-point MCWs may be applicable to develop implantable temperature-sensitive formulations that drug release is accelerated by cooling at administered site. Copyright © 2017 Elsevier B.V. All rights reserved.

  20. Crystallization of II-VI semiconductor compounds forming long microcrystalline linear assemblies

    Marcelino Becerril

    2013-04-01

    Full Text Available In this work we report the formation of long microcrystalline linear self-assemblies observed during the thin film growth of several II-VI compounds. Polycrystalline CdTe, CdS, CdCO3, and nanocrystalline CdTe:Al thin films were prepared on glass substrates by different deposition techniques. In order to observe these crystalline formations in the polycrystalline materials, the thin film growth was suspended before the grains reached to form a continuous layer. The chains of semiconductor crystals were observed among many isolated and randomly distributed grains. Since CdTe, CdTe:Al, CdS and CdCO3 are not ferroelectric and/or ferromagnetic materials, the relevant problem would be to explain what is the mechanism through which the grains are held together to form linear chains. It is well known that some nanocrystalline materials form rods and wires by means of electrostatic forces. This occurs in polar semiconductors, where it is assumed that the attraction forces between surface polar faces of the small crystals are the responsible for the chains formation. Since there are not too many mechanisms responsible for the attraction we assume that a dipolar interaction is the force that originates the formation of chain-like grain clusters. The study of this property can be useful for the understanding of nucleation processes in the growth of semiconductor thin films.

  1. Extraction of microcrystalline cellulose from rice straw and its effect on polyvinyl alcohol biocomposites film

    Chin, Kwok-Mern; Ting, Sam Sung; Lin, Ong Hui; Owi, Wei Tieng

    2017-07-01

    The poor management and underutilization of agricultural wastes had proliferated interest of researchers around the world to find alternatives to utilize them as potential value-added products. One of the green alternatives is by extracting cellulose from these waste materials and incorporating them in polymer as reinforcement fillers. The surging amount of plastic waste also posed major issues to the environment due to its recalcitrance to degrade. Microcrystalline cellulose (MCC-RS) was extracted from rice straw through cyclic alkaline and bleaching treatment to remove hemicellulose and lignin respectively. Polyvinyl alcohol (PVOH) was chosen as the matrix and different ratios of PVOH / MCC-RS films were prepared (2.5, 5.0, 7.5 and 10.0wt% of MCC) through solution casting method and its tensile, thermal and morphological properties were studied. X-ray powder diffraction (XRD) results showed increased crystallinity of MCC-RS after chemical treatment (from 44.5% to 60.8%) due to the successful removal of lignin and hemicellulose, which was then confirmed with Fourier transform infrared spectroscopy (FTIR) results. For the biocomposites, both tensile strength and Young's modulus of the films increased with increasing MCC-RS content up until 7.5wt%, supported with scanning electron microscopy (SEM) results which depicted improvement in the interfacial adhesion between MCC-RS and PVOH. From the overall results, the improvement in properties of biocomposite from cellulose-based microfiller had shown promising future in application of the water soluble plastic packaging industry.

  2. Quenching of porous silicon photoluminescence by molecular oxygen and dependence of this phenomenon on storing media and method of preparation of pSi photosensitizer

    Balaguer, María; Matveeva, Eugenia

    2010-10-01

    The quenching of porous silicon photoluminescence (pSi PL) by molecular oxygen has been studied in different storing media in an attempt to clarify the mechanism of the energy transfer from the silicon photosensitizer to the oxygen acceptor. Luminescent materials have been prepared by two methods: electrochemical anodizing and chemical etching. Different structural forms were used: porous layers on silicon wafer and two kinds of differently prepared powder. Dry air and liquid water were employed as storing media; quenching behaviour was under observation until total degradation of quenching properties. Singlet oxygen molecules generation through energy transfer from photoluminescent pSi was the only photosensitizing mechanism observed under dry gas conditions. This PL quenching process was preferentially developed at 760 nm (1.63 eV) that corresponds to the formation of the 1Σ singlet oxygen state. Oxidation of the pSi photosensitizer was the main factor that led to its total deactivation in a time scale of few weeks. Regarding water medium, different photosensitizing behaviour was observed. In watery conditions, two preferred energy levels were found: the one detected in dry gas and another centred at approximately 2.2 eV (550 nm). Formation of reactive oxygen species (ROS) different from singlet oxygen, such as superoxide anion or superoxide radical, can be responsible for the second one. This second quenching process developed gradually after the initial contact of pSi photosensitizer with water and then degraded. The process lasted only several hours. Therefore, functionalization of the pSi photosensitizer is probably required to stabilize its PL and quenching properties in the watery physiological conditions required for biomedical applications.

  3. Quenching of porous silicon photoluminescence by molecular oxygen and dependence of this phenomenon on storing media and method of preparation of pSi photosensitizer

    Balaguer, Maria, E-mail: mabara@itq.upv.e [Technical University of Valencia, Nanophotonics Technology Center (Spain); Matveeva, Eugenia, E-mail: eumat@em-silicon.co [EM-Silicon Nano-Technologies, S.L. (Spain)

    2010-10-15

    The quenching of porous silicon photoluminescence (pSi PL) by molecular oxygen has been studied in different storing media in an attempt to clarify the mechanism of the energy transfer from the silicon photosensitizer to the oxygen acceptor. Luminescent materials have been prepared by two methods: electrochemical anodizing and chemical etching. Different structural forms were used: porous layers on silicon wafer and two kinds of differently prepared powder. Dry air and liquid water were employed as storing media; quenching behaviour was under observation until total degradation of quenching properties. Singlet oxygen molecules generation through energy transfer from photoluminescent pSi was the only photosensitizing mechanism observed under dry gas conditions. This PL quenching process was preferentially developed at 760 nm (1.63 eV) that corresponds to the formation of the {sup 1{Sigma}} singlet oxygen state. Oxidation of the pSi photosensitizer was the main factor that led to its total deactivation in a time scale of few weeks. Regarding water medium, different photosensitizing behaviour was observed. In watery conditions, two preferred energy levels were found: the one detected in dry gas and another centred at approximately 2.2 eV (550 nm). Formation of reactive oxygen species (ROS) different from singlet oxygen, such as superoxide anion or superoxide radical, can be responsible for the second one. This second quenching process developed gradually after the initial contact of pSi photosensitizer with water and then degraded. The process lasted only several hours. Therefore, functionalization of the pSi photosensitizer is probably required to stabilize its PL and quenching properties in the watery physiological conditions required for biomedical applications.

  4. Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition.

    Jia, Endong; Zhou, Chunlan; Wang, Wenjing

    2015-01-01

    Plasma-enhanced atom layer deposition (PEALD) can deposit denser films than those prepared by thermal ALD. But the improvement on thickness uniformity and the decrease of defect density of the films deposited by PEALD need further research. A PEALD process from trimethyl-aluminum (TMA) and oxygen plasma was investigated to study the influence of the conditions with different plasma powers and deposition temperatures on uniformity and growth rate. The thickness and refractive index of films were measured by ellipsometry, and the passivation effect of alumina on n-type silicon before and after annealing was measured by microwave photoconductivity decay method. Also, the effects of deposition temperature and annealing temperature on effective minority carrier lifetime were investigated. Capacitance-voltage and conductance-voltage measurements were used to investigate the interface defect density of state (D it) of Al2O3/Si. Finally, Al diffusion P(+) emitter on n-type silicon was passivated by PEALD Al2O3 films. The conclusion is that the condition of lower substrate temperature accelerates the growth of films and that the condition of lower plasma power controls the films' uniformity. The annealing temperature is higher for samples prepared at lower substrate temperature in order to get the better surface passivation effects. Heavier doping concentration of Al increased passivation quality after annealing by the effective minority carrier lifetime up to 100 μs.

  5. Deuterium trapping in the carbon-silicon co-deposition layers prepared by RF sputtering in D2 atmosphere

    Zhang, Hongliang; Zhang, Weiyuan; Su, Ranran; Tu, Hanjun; Shi, Liqun; Hu, Jiansheng

    2018-04-01

    Deuterated carbon-silicon layers co-deposited on graphite and silicon substrates by radio frequency magnetron sputtering in pure D2 plasma were produced to study deuterium trapping and characteristics of the C-Si layers. The C-Si co-deposited layers were examined by ion beam analysis (IBA), Raman spectroscopy (RS), infrared absorption (IR) spectroscopy, thermal desorption spectroscopy (TDS) and scanning electron microscopy (SEM). It was found that the growth rate of the C-Si co-deposition layer decreased with increasing temperature from 350 K to 800 K, the D concentration and C/Si ratios increased differently on graphite and silicon substrates. TDS shows that D desorption is mainly as D2, HD, HDO, CD4, and C2D4 and release peaks occurred at temperatures of less than 900 K. RS and IR analysis reveal that the structure of the C-Si layers became more disordered with increasing temperatures. Rounded areas of peeling with 1-2 μm diameters were observed on the surface.

  6. Preparation and properties of novel epoxy/graphene oxide nanosheets (GON) composites functionalized with flame retardant containing phosphorus and silicon

    Li, Kuo-Yi; Kuan, Chen-Feng; Kuan, Hsu-Chiang; Chen, Chia-Hsun; Shen, Ming-Yuan; Yang, Jia-Ming; Chiang, Chin-Lung

    2014-01-01

    2-(Diphenylphosphino)ethyltriethoxy silane (DPPES) was grafted onto the surface of graphene oxide nanosheets (GON) via a condensation reaction. X-ray photoelectron spectroscopy, X-ray diffractometry, Fourier transform infrared spectroscopy and Raman spectroscopy verify that DPPES did not only covalently bond to GON as a functionalization moiety, but partly restored its conjugated structure as a reducing agent. DPPES on graphene sheets oxide was observed by transmission electron microscopy, and contributed to the favorable dispersion of DPPES-GON in nonpolar toluene. Additionally, the flame retardancy and thermal stability of epoxy/DPPES-GON nanocomposites that contain various weight fractions of DPPES-GON were studied using the limiting oxygen index test, UL-94 test and by thermogravimetric analysis in nitrogen. The composites containing 10 wt% DPPES-GON can pass V-0 rating in UL-94 test. Adding 10 wt% DPPES-GON in epoxy greatly increased the char yield and LOI by 42% and 80%, respectively. Epoxy/DPPES-GON nanocomposites with phosphorus, silicon and graphene layer structures were found to exhibit much greater flame retardancy than neat epoxy. The synergistic effects among silicon, phosphorus and GON can improve the flame retardancy of epoxy resin. - Highlights: • Flame retardant was grafted on the surface of graphene oxide nanosheets (GON) by the condensation reaction. • The synergistic effect between silicon, phosphorus and GON improved the flame retardance of epoxy resin. • Epoxy composites have excellent flame retardance at low additive concentrations

  7. Fractal analysis of SEM images and mercury intrusion porosimetry data for the microstructural characterization of microcrystalline cellulose-based pellets

    Gomez-Carracedo, A.; Alvarez-Lorenzo, C.; Coca, R.; Martinez-Pacheco, R.; Concheiro, A.; Gomez-Amoza, J.L.

    2009-01-01

    The microstructure of theophylline pellets prepared from microcrystalline cellulose, carbopol and dicalcium phosphate dihydrate, according to a mixture design, was characterized using textural analysis of gray-level scanning electron microscopy (SEM) images and thermodynamic analysis of the cumulative pore volume distribution obtained by mercury intrusion porosimetry. Surface roughness evaluated in terms of gray-level non-uniformity and fractal dimension of pellet surface depended on agglomeration phenomena during extrusion/spheronization. Pores at the surface, mainly 1-15 μm in diameter, determined both the mechanism and the rate of theophylline release, and a strong negative correlation between the fractal geometry and the b parameter of the Weibull function was found for pellets containing >60% carbopol. Theophylline mean dissolution time from these pellets was about two to four times greater. Textural analysis of SEM micrographs and fractal analysis of mercury intrusion data are complementary techniques that enable complete characterization of multiparticulate drug dosage forms

  8. Synthesis, characterization and adsorption properties of microcrystalline cellulose based nanogel for dyes and heavy metals removal.

    El-Naggar, Mehrez E; Radwan, Emad K; El-Wakeel, Shaimaa T; Kafafy, Hany; Gad-Allah, Tarek A; El-Kalliny, Amer S; Shaheen, Tharwat I

    2018-07-01

    Recently, naturally occurring biopolymers have attracted the attention as potential adsorbents for the removal of water contaminants. In this work, we present the development of microcrystalline cellulose (MCC)-based nanogel grafted with acrylamide and acrylic acid in the presence of methylene bisacrylamide and potassium persulphate as a crosslinking agent and initiator, respectively. World-class facilities such as X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), surface analysis, field emission scanning electron microscopy (FE-SEM), high resolution transmission electron microscopy (HR-TEM) and zeta sizer were used to characterize the synthesized MCC based nanogel. The prepared nanogel was applied to remove reactive red 195 (RR195) dye and Cd (II) from aqueous medium at different operational conditions. The adsorption experiments showed that the feed concentration of monomers has a significant effect on the removal of RR195 which peaked (93% removal) after 10min of contact time at pH2 and a dose of 1.5g/L. On contrary, the feed concentration has insignificant effect on the removal of Cd (II) which peaked (97% removal) after 30min of contact time at pH6 and a dose of 0.5g/L. The adsorption equilibrium data of RR195 and Cd (II) was best described by Freundlich and Langmuir, respectively. Conclusively, the prepared MCC based nanogels were proved as promising adsorbents for the removal of organic pollutants as well as heavy metals. Copyright © 2018 Elsevier B.V. All rights reserved.

  9. Hidden parameters in the plasma deposition of microcrystalline silicon solar cells

    van den Donker, M.N.; Rech, B.; Schmitz, R.; Klomfass, J.; Dingemans, G.; Finger, F.; Houben, L.; Kessels, W.M.M.; Sanden, van de M.C.M.

    2007-01-01

    The effect of process parameters on the plasma deposition of µc-Si:H solar cells is reviewed in this article. Several in situ diagnostics are presented, which can be used to study the process stability as an additional parameter in the deposition process. The diagnostics were used to investigate the

  10. Computer analysis of microcrystalline silicon hetero-junction solar cell with lumerical FDTD/DEVICE

    Riaz, Muhammad; Earles, S. K.; Kadhim, Ahmed; Azzahrani, Ahmad

    The computer analysis of tandem solar cell, c-Si/a-Si:H/μc-SiGe, is studied within Lumerical FDTD/Device 4.6. The optical characterization is performed in FDTD and then total generation rate is transported into DEVICE for electrical characterization. The electrical characterization of the solar cell is carried out in DEVICE. The design is implemented by staking three sub cells with band gap of 1.12eV, 1.50eV and 1.70eV, respectively. First, single junction solar cell with both a-Si and μc-SiGe absorbing layers are designed and compared. The thickness for both layers are kept the same. In a single junction, solar cell with a-Si absorbing layer, the fill factor and the efficiency are noticed as FF = 78.98%, and η = 6.03%. For μc-SiGe absorbing layer, the efficiency and fill factor are increased as η = 7.06% and FF = 84.27%, respectively. Second, for tandem thin film solar cell c-Si/a-Si:H/μc-SiGe, the fill factor FF = 81.91% and efficiency η = 9.84% have been noticed. The maximum efficiency for both single junction thin film solar cell c-Si/μc-SiGe and tandem solar cell c-Si/a-Si:H/μc-SiGe are improved with check board surface design for light trapping.

  11. Quality Evaluation for Microcrystalline Silicon Thin-Film Solar Cells by Single-Layer Absorption

    Sheng-Hui Chen

    2012-01-01

    Full Text Available The absorption coefficient at 1.4 eV is divided by the value at 0.9 eV to obtain the factor used to judge the quality of μc-Si:H. PV device performance can be predicted by multiplying Voc with Isc when using this layer as an intrinsic layer. The results show a good relationship between the quality factor and the product of open-circuit voltage and short-circuit current. However, the final efficiency is influenced by the identities of the interface in the multilayer structure.

  12. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  13. Grating-assisted coupling to nanophotonic circuits in microcrystalline diamond thin films

    Patrik Rath

    2013-05-01

    Full Text Available Synthetic diamond films can be prepared on a waferscale by using chemical vapour deposition (CVD on suitable substrates such as silicon or silicon dioxide. While such films find a wealth of applications in thermal management, in X-ray and terahertz window design, and in gyrotron tubes and microwave transmission lines, their use for nanoscale optical components remains largely unexplored. Here we demonstrate that CVD diamond provides a high-quality template for realizing nanophotonic integrated optical circuits. Using efficient grating coupling devices prepared from partially etched diamond thin films, we investigate millimetre-sized optical circuits and achieve single-mode waveguiding at telecoms wavelengths. Our results pave the way towards broadband optical applications for sensing in harsh environments and visible photonic devices.

  14. Preparation, Characterization, Thermal, and Flame-Retardant Properties of Green Silicon-Containing Epoxy/Functionalized Graphene Nanosheets Composites

    Ming-Yuan Shen

    2013-01-01

    Full Text Available In this investigation, silane was grafted onto the surface of graphene nanosheets (GNSs through free radical reactions, to form Si-O-Et functional groups that can undergo the sol-gel reaction. To improve the compatibility between the polymer matrix and the fillers, epoxy monomer was modified using a silane coupling agent; then, the functionalized GNSs were added to the modified epoxy to improve the thermal stability and strengthen the flame-retardant character of the composites. High-resolution X-ray photoelectron spectrometry reveals that when the double bonds in VTES are grafted to the surfaces of GNSs. Solid-state 29Si nuclear magnetic resonance presents that the distribution of the signal associated with the T3 structure is wide and significant, indicating that the functionalization reaction of the silicone in the modified epoxy and VTES-GNSs increases the network-like character of the structures. Thermal gravimetric analysis, the integral procedure decomposition temperature, and limiting oxygen index demonstrate that the GNSs composites that contained silicon had a higher thermal stability and stronger flame-retardant character than pure epoxy. The dynamic storage modulus of all of the m-GNSs containing composites was significantly higher than that of the control epoxy, and the modulus of the composites increased with the concentration of m-GNSs.

  15. Preparation of magnetic and bioactive calcium zinc iron silicon oxide composite for hyperthermia treatment of bone cancer and repair of bone defects.

    Jiang, Yumin; Ou, Jun; Zhang, Zhanhe; Qin, Qing-Hua

    2011-03-01

    In this paper, a calcium zinc iron silicon oxide composite (CZIS) was prepared using the sol-gel method. X-ray diffraction (XRD) was then employed to test the CZIS composite. The results from the test showed that the CZIS had three prominent crystalline phases: Ca(2)Fe(1.7)Zn(0.15)Si(0.15)O(5), Ca(2)SiO(4), and ZnFe(2)O(4). Calorimetric measurements were then performed using a magnetic induction furnace. Scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) analysis were conducted to confirm the growth of a precipitated hydroxyapatite phase after immersion in simulated body fluid (SBF). Cell culture experiments were also carried out, showing that the CZIS composite more visibly promoted osteoblast proliferation than ZnFe(2)O(4) glass ceramic and HA, and osteoblasts adhered and spread well on the surfaces of composite samples.

  16. Properties of form-stable paraffin/silicon dioxide/expanded graphite phase change composites prepared by sol–gel method

    Li, Min; Wu, Zhishen; Tan, Jinmiao

    2012-01-01

    Highlights: ► Paraffin/SiO 2 /EG composite PCM was prepared with sol–gel method. ► The thermal conductivity of SiO 2 /paraffin/EG is 94.7% higher than paraffin. ► The latent heat of paraffin/SiO 2 /EG composite is 104.4 J/g. -- Abstract: A form-stable paraffin/silicon dioxide (SiO 2 )/expanded graphite (EG) composite phase change material (PCM) was prepared by sol–gel method. Silica gel acts as the supporting material and EG is used to increase the thermal conductivity. The mass fractions of silicon oxide and graphite are 20.8% and 7.2%, respectively. The composite PCM was characterized using scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Fourier transformation infrared spectroscopy (FTIR) method. Thermal properties and thermal stability of the composite PCM were studied using differential scanning calorimetry (DSC). The result shows that paraffin was well dispersed in the network of silica gel and there is no chemical reaction between them. The phase change temperature of the paraffin/SiO 2 composite and the paraffin/SiO 2 /EG composite are 27.53 °C and 27.72 °C, respectively. The latent heat of the paraffin/SiO 2 composite and the paraffin/SiO 2 /EG composite are 112.8 J/g and 104.4 J/g, respectively. The thermal conductivity of the SiO 2 /paraffin composite and the SiO 2 /paraffin/EG composite are 28.2% and 94.7% higher than that of paraffin.

  17. Light-Induced Degradation of Thin Film Silicon Solar Cells

    Hamelmann, F U; Weicht, J A; Behrens, G

    2016-01-01

    Silicon-wafer based solar cells are still domination the market for photovoltaic energy conversion. However, most of the silicon is used only for mechanical stability, while only a small percentage of the material is needed for the light absorption. Thin film silicon technology reduces the material demand to just some hundred nanometer thickness. But even in a tandem stack (amorphous and microcrystalline silicon) the efficiencies are lower, and light-induced degradation is an important issue. The established standard tests for characterisation are not precise enough to predict the performance of thin film silicon solar cells under real conditions, since many factors do have an influence on the degradation. We will show some results of laboratory and outdoor measurements that we are going to use as a base for advanced modelling and simulation methods. (paper)

  18. Spherical composite particles of rice starch and microcrystalline cellulose: a new coprocessed excipient for direct compression.

    Limwong, Vasinee; Sutanthavibul, Narueporn; Kulvanich, Poj

    2004-03-12

    Composite particles of rice starch (RS) and microcrystalline cellulose were fabricated by spray-drying technique to be used as a directly compressible excipient. Two size fractions of microcrystalline cellulose, sieved (MCS) and jet milled (MCJ), having volumetric mean diameter (D50) of 13.61 and 40.51 microm, respectively, were used to form composite particles with RS in various mixing ratios. The composite particles produced were evaluated for their powder and compression properties. Although an increase in the microcrystalline cellulose proportion imparted greater compressibility of the composite particles, the shape of the particles was typically less spherical with rougher surface resulting in a decrease in the degree of flowability. Compressibility of composite particles made from different size fractions of microcrystalline cellulose was not different; however, using MCJ, which had a particle size range close to the size of RS (D50 = 13.57 microm), provided more spherical particles than using MCS. Spherical composite particles between RS and MCJ in the ratio of 7:3 (RS-MCJ-73) were then evaluated for powder properties and compressibility in comparison with some marketed directly compressible diluents. Compressibility of RS-MCJ-73 was greater than commercial spray-dried RS (Eratab), coprocessed lactose and microcrystalline cellulose (Cellactose), and agglomerated lactose (Tablettose), but, as expected, lower than microcrystalline cellulose (Vivapur 101). Flowability index of RS-MCJ-73 appeared to be slightly lower than Eratab but higher than Vivapur 101, Cellactose, and Tablettose. Tablets of RS-MCJ-73 exhibited low friability and good self-disintegrating property. It was concluded that these developed composite particles could be introduced as a new coprocessed direct compression excipient.

  19. Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method

    Najar, Adel; Anjum, Dalaver H.; Hedhili, Mohamed N.; Ng, Tien Khee; Ooi, Boon S.; Ben Slimane, Ahmed; Sougrat, Rachid

    2012-01-01

    We report on the structural and optical properties of porous silicon nanowires (PSiNWs) fabricated using silver (Ag) ions assisted electroless etching method. Silicon nanocrystallites with sizes <5 nm embedded in amorphous silica have been

  20. Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition

    Kakiuchi, H.; Nakahama, Y.; Ohmi, H.; Yasutake, K.; Yoshii, K.; Mori, Y.

    2005-01-01

    Silicon nitride (SiN x ) films have been prepared at extremely high deposition rates by the atmospheric pressure plasma chemical vapor deposition (AP-PCVD) technique on Si(001) wafers from gas mixtures containing He, H 2 , SiH 4 and N 2 or NH 3 . A 150 MHz very high frequency (VHF) power supply was used to generate high-density radicals in the atmospheric pressure plasma. Deposition rate, composition and morphology of the SiN x films prepared with various deposition parameters were studied by scanning electron microscopy and Auger electron spectroscopy. Fourier transformation infrared (FTIR) absorption spectroscopy was also used to characterize the structure and the chemical bonding configurations of the films. Furthermore, etching rate with buffered hydrofluoric acid (BHF) solution, refractive index and capacitance-voltage (C-V) characteristics were measured to evaluate the dielectric properties of the films. It was found that effective passivation of dangling bonds and elimination of excessive hydrogen atoms at the film-growing surface seemed to be the most important factor to form SiN x film with a dense Si-N network. The C-V curve of the optimized film showed good interface properties, although further improvement was necessary for use in the industrial metal-insulator-semiconductor (MIS) applications

  1. A simplified boron diffusion for preparing the silicon single crystal p-n junction as an educational device

    Shiota, Koki, E-mail: a14510@sr.kagawa-nct.ac.jp; Kai, Kazuho; Nagaoka, Shiro, E-mail: nagaoka@es.kagawa-nct.ac.jp [National Institute of Technology, Kagawa College, Kagawa, Mitoyo, Takuma, Koda 551 (Japan); Tsuji, Takuto [National Institute of Technology, Suzuka College, Mie, Suzuka, Shiroko (Japan); Wakahara, Akihiro [Toyohashi University of Technology, Aichi, Toyohashi, Tenpaku, Hibarigaoka 1-1 (Japan); Rusop, Mohamad [University Technology Mara, Selangor, Shah Alam, 40450 (Malaysia)

    2016-07-06

    The educational method which is including designing, making, and evaluating actual semiconductor devices with learning the theory is one of the best way to obtain the fundamental understanding of the device physics and to cultivate the ability to make unique ideas using the knowledge in the semiconductor device. In this paper, the simplified Boron thermal diffusion process using Sol-Gel material under normal air environment was proposed based on simple hypothesis and the feasibility of the reproducibility and reliability were investigated to simplify the diffusion process for making the educational devices, such as p-n junction, bipolar and pMOS devices. As the result, this method was successfully achieved making p+ region on the surface of the n-type silicon substrates with good reproducibility. And good rectification property of the p-n junctions was obtained successfully. This result indicates that there is a possibility to apply on the process making pMOS or bipolar transistors. It suggests that there is a variety of the possibility of the applications in the educational field to foster an imagination of new devices.

  2. Thermal post-deposition treatment effects on nanocrystalline hydrogenated silicon prepared by PECVD under different hydrogen flow rates

    Amor, Sana Ben, E-mail: sana.benamor1@gmail.com [Photovoltaic Laboratory Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia); University of Applied Medical Sciences of Hafr El Baten (Saudi Arabia); Meddeb, Hosny; Daik, Ridha; Othman, Afef Ben; Slama, Sonia Ben; Dimassi, Wissem; Ezzaouia, Hatem [Photovoltaic Laboratory Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia)

    2016-01-01

    Graphical abstract: At high annealing temperatures, many atoms do not suffer the attraction of surface species due to the thermal agitation and consequently few atoms are adsorbed. As the temperature is lowered the adsorption is more efficient to the point that is no more atoms in the gas phase. Indeed at relatively low temperatures, the atoms have too little energy to escape from the surface or even to vibrate against it. They lost their degree of freedom in the direction perpendicular to the surface. But this does not prevent the atoms to diffuse along the surface. As a result, the layer's thickness decrease with increasing the annealing temperature. - Highlights: The results extracted from this work are: • The post-deposition thermal treatment improves the crystallinity the film at moderate temperature (500 °C). • The higher annealing temperature can lead to decrease the silicon–hydrogen bonds and increase the Si–Si bonds. • Moderate annealing temperature (700 °C) seems to be crucial for obtaining high minority carrier life times. • Hydrogen effusion phenomenon start occurring at 500–550 °C and get worsen at 900 °C. - Abstract: In this paper, hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited on mono-crystalline silicon substrate by plasma enhanced chemical vapor deposition (PECVD) under different hydrogen flow rates followed by a thermal treatment in an infrared furnace at different temperature ranging from 300 to 900 °C. The investigated structural, morphological and optoelectronic properties of samples were found to be strongly dependent on the annealing temperature. Raman spectroscopy revealed that nc-Si:H films contain crystalline, amorphous and mixed structures as well. We find that post-deposition thermal treatment may lead to a tendency for structural improvement and a decrease of the disorder in the film network at moderate temperature under 500 °C. As for annealing at higher temperature up to 900

  3. Preparation and electrochemical performance of copper foam-supported amorphous silicon thin films for rechargeable lithium-ion batteries

    Li Haixia; Cheng Fangyi; Zhu Zhiqiang; Bai Hongmei; Tao Zhanliang; Chen Jun

    2011-01-01

    Research highlights: → Amorphous Si thin films have been deposited on copper foam substrate by radio-frequency (rf) magnetron sputtering. → The as-prepared Si/Cu films with interconnected 3-dimensional structure are employed as anode materials of rechargeable lithium-ion batteries, showing that the electrode properties are greatly affected by the deposition temperature. → The film electrode deposited at an optimum temperature of 300 deg. C delivers a specific capacity of ∼2900 mAh/g and a coulombic efficiency above 95% at charge/discharge current density of 0.2C after 30 cycles. → The Li + diffusion coefficiency in copper foam-supported Si thin films is determined to be 2.36 x 10 -9 cm 2 /s. → The combination of rf magnetron sputtering and cooper foam substrate is an efficient route to prepare amorphous Si films with high capacity and cyclability due to the efficient ionic diffusion and interface contact with a good conductive current collector. - Abstract: Amorphous Si thin films, which have been deposited on copper foam by radio-frequency (rf) magnetron sputtering, are employed as anode materials of rechargeable lithium-ion batteries. The morphologies and structures of the as-prepared Si thin films are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray powder diffraction (XRD). Electrochemical performance of lithium-ion batteries with the as-prepared Si films as the anode materials is investigated by cyclic voltammetry and charge-discharge measurements. The results show that the electrode properties of the prepared amorphous Si films are greatly affected by the deposition temperature. The film electrode deposited at an optimum temperature of 300 deg. C can deliver a specific capacity of ∼2900 mAh/g and a coulombic efficiency above 95% at charge/discharge current density of 0.2C after 30 cycles. The Li + diffusion coefficiency in copper foam-supported Si thin films is determined to be 2.36 x 10 -9 cm

  4. Optimisation of the composition and production of mannitol/microcrystalline cellulose tablets

    Westerhuis, J.A; de Haan, P; Zwinkels, J; Jansen, W.T; Coenegracht, P.M J; Lerk, C.F

    1996-01-01

    Mixtures of mannitol and microcrystalline cellulose (MCC) were investigated on a small-production scale by granulation in a high-shear mixer and compression into tablets. For both excipients only a few cases of incompatibilities with active ingredients are known. Tablets with only MCC as the filler

  5. 77 FR 25720 - Determination That GRIFULVIN V (Griseofulvin Microcrystalline) Tablets, 250 Milligrams, Was Not...

    2012-05-01

    ... been discontinued from marketing for reasons other than safety or effectiveness. ANDAs that refer to... Sale for Reasons of Safety or Effectiveness AGENCY: Food and Drug Administration, HHS. ACTION: Notice... microcrystalline) tablets, 250 milligrams (mg), was not withdrawn from sale for reasons of safety or effectiveness...

  6. On the compressibility of TiC in microcrystalline and nanoparticulate form

    Gu, Q F; Krauss, G; Steurer, W; Gramm, F

    2008-01-01

    The compressibility of TiC in microcrystalline and nanoparticulate (30-50 nm) form was studied by in situ high-pressure synchrotron radiation x-ray diffraction measurements up to 53.7 GPa using a diamond anvil cell. Both materials are structurally stable within the framework of the experiments applying quasihydrostatic pressure conditions. Under nonhydrostatic pressure conditions, the lattice of microcrystalline TiC is rhombohedrally distorted. Comparable values for the bulk modulus were found for both materials, i.e. K 0 = 254(7) GPa, K' = 4.8(4) for microcrystalline TiC and K 0 = 276(14) GPa, K' = 3.5(8) for nanoparticulate TiC, respectively. High-resolution transmission electron microscopy investigations revealed a nearly single-domain microstructure of the nanoparticles. The microstructure and size of the nanoparticles, making a size-induced effect on the mechanical properties negligible, explain well the observed similarity of the mechanical properties of microcrystalline and nanoparticulate TiC.

  7. A novel method of producing a microcrystalline beta-sitosterol suspension in oil

    Christiansen, Leena I; Rantanen, Jukka T; von Bonsdorff, Anna K

    2002-01-01

    This paper describes a novel method of producing a microcrystalline oral suspension containing beta-sitosterol in oil for the treatment of hypercholesterolaemia. beta-Sitosterol pseudopolymorphs with different water contents were crystallized from acetone and acetone-water solutions. Structural...

  8. Silicone metalization

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  9. Studies on linear, nonlinear optical and excited state dynamics of silicon nanoparticles prepared by picosecond laser ablation

    Syed Hamad

    2015-12-01

    Full Text Available We report results from our studies on the fabrication and characterization of silicon (Si nanoparticles (NPs and nanostructures (NSs achieved through the ablation of Si target in four different liquids using ∼2 picosecond (ps pulses. The consequence of using different liquid media on the ablation of Si target was investigated by studying the surface morphology along with material composition of Si based NPs. The recorded mean sizes of these NPs were ∼9.5 nm, ∼37 nm, ∼45 nm and ∼42 nm obtained in acetone, water, dichloromethane (DCM and chloroform, respectively. The generated NPs were characterized by selected area electron diffraction (SAED, high resolution transmission microscopy (HRTEM, Raman spectroscopic techniques and Photoluminescence (PL studies. SAED, HRTEM and Raman spectroscopy data confirmed that the material composition was Si NPs in acetone, Si/SiO2 NPs in water, Si-C NPs in DCM and Si-C NPs in chloroform and all of them were confirmed to be polycrystalline in nature. Surface morphological information of the fabricated Si substrates was obtained using the field emission scanning electron microscopic (FESEM technique. FESEM data revealed the formation of laser induced periodic surface structures (LIPSS for the case of ablation in acetone and water while random NSs were observed for the case of ablation in DCM and chloroform. Femtosecond (fs nonlinear optical properties and excited state dynamics of these colloidal Si NPs were investigated using the Z-scan and pump-probe techniques with ∼150 fs (100 MHz and ∼70 fs (1 kHz laser pulses, respectively. The fs pump-probe data obtained at 600 nm consisted of single and double exponential decays which were tentatively assigned to electron-electron collisional relaxation (1 ps. Large third order optical nonlinearities (∼10−14 e.s.u. for these colloids have been estimated from Z-scan data at an excitation wavelength of 680 nm suggesting that the colloidal Si NPs find

  10. Studies on linear, nonlinear optical and excited state dynamics of silicon nanoparticles prepared by picosecond laser ablation

    Hamad, Syed; Nageswara Rao, S. V. S.; Pathak, A. P. [School of Physics, University of Hyderabad, Hyderabad 500046, Telangana (India); Krishna Podagatlapalli, G.; Mounika, R.; Venugopal Rao, S., E-mail: soma-venu@yahoo.com, E-mail: soma-venu@uohyd.ac.in [Advanced Center of Research in High Energy Materials (ACRHEM), University of Hyderabad, Hyderabad 500046, Telangana (India)

    2015-12-15

    We report results from our studies on the fabrication and characterization of silicon (Si) nanoparticles (NPs) and nanostructures (NSs) achieved through the ablation of Si target in four different liquids using ∼2 picosecond (ps) pulses. The consequence of using different liquid media on the ablation of Si target was investigated by studying the surface morphology along with material composition of Si based NPs. The recorded mean sizes of these NPs were ∼9.5 nm, ∼37 nm, ∼45 nm and ∼42 nm obtained in acetone, water, dichloromethane (DCM) and chloroform, respectively. The generated NPs were characterized by selected area electron diffraction (SAED), high resolution transmission microscopy (HRTEM), Raman spectroscopic techniques and Photoluminescence (PL) studies. SAED, HRTEM and Raman spectroscopy data confirmed that the material composition was Si NPs in acetone, Si/SiO{sub 2} NPs in water, Si-C NPs in DCM and Si-C NPs in chloroform and all of them were confirmed to be polycrystalline in nature. Surface morphological information of the fabricated Si substrates was obtained using the field emission scanning electron microscopic (FESEM) technique. FESEM data revealed the formation of laser induced periodic surface structures (LIPSS) for the case of ablation in acetone and water while random NSs were observed for the case of ablation in DCM and chloroform. Femtosecond (fs) nonlinear optical properties and excited state dynamics of these colloidal Si NPs were investigated using the Z-scan and pump-probe techniques with ∼150 fs (100 MHz) and ∼70 fs (1 kHz) laser pulses, respectively. The fs pump-probe data obtained at 600 nm consisted of single and double exponential decays which were tentatively assigned to electron-electron collisional relaxation (<1 ps) and non-radiative transitions (>1 ps). Large third order optical nonlinearities (∼10{sup −14} e.s.u.) for these colloids have been estimated from Z-scan data at an excitation wavelength of 680 nm

  11. Shape Modification and Size Classification of Microcrystalline Graphite Powder as Anode Material for Lithium-Ion Batteries

    Wang, Cong; Gai, Guosheng; Yang, Yufen

    2018-03-01

    Natural microcrystalline graphite (MCG) composed of many crystallites is a promising new anode material for lithium-ion batteries (LiBs) and has received considerable attention from researchers. MCG with narrow particle size distribution and high sphericity exhibits excellent electrochemical performance. A nonaddition process to prepare natural MCG as a high-performance LiB anode material is described. First, raw MCG was broken into smaller particles using a pulverization system. Then, the particles were modified into near-spherical shape using a particle shape modification system. Finally, the particle size distribution was narrowed using a centrifugal rotor classification system. The products with uniform hemispherical shape and narrow size distribution had mean particle size of approximately 9 μm, 10 μm, 15 μm, and 20 μm. Additionally, the innovative pilot experimental process increased the product yield of the raw material. Finally, the electrochemical performance of the prepared MCG was tested, revealing high reversible capacity and good cyclability.

  12. Statistical Optimization for Acid Hydrolysis of Microcrystalline Cellulose and Its Physiochemical Characterization by Using Metal Ion Catalyst

    Md. Ziaul Karim

    2014-10-01

    Full Text Available Hydrolyzing the amorphous region while keeping the crystalline region unaltered is the key technology for producing nanocellulose. This study investigated if the dissolution properties of the amorphous region of microcrystalline cellulose can be enhanced in the presence of Fe3+ salt in acidic medium. The process parameters, including temperature, time and the concentration of metal chloride catalyst (FeCl3, were optimized by using the response surface methodology (RSM. The experimental observation demonstrated that temperature and time play vital roles in hydrolyzing the amorphous sections of cellulose. This would yield hydrocellulose with higher crystallinity. The factors that were varied for the production of hydrocellulose were the temperature (x1, time (x2 and FeCl3 catalyst concentration (x3. Responses were measured in terms of percentage of crystallinity (y1 and the yield (y2 of the prepared hydrocellulose. Relevant mathematical models were developed. Analysis of variance (ANOVA was carried out to obtain the most significant factors influencing the responses of the percentage of crystallinity and yield. Under optimum conditions, the percentage of crystallinity and yield were 83.46% and 86.98% respectively, at 90.95 °C, 6 h, with a catalyst concentration of 1 M. The physiochemical characteristics of the prepared hydrocellulose were determined in terms of XRD, SEM, TGA and FTIR analyses. The addition of FeCl3 salt in acid hydrolyzing medium is a novel technique for substantially increasing crystallinity with a significant morphological change.

  13. A novel process for synthesis of spherical nanocellulose by controlled hydrolysis of microcrystalline cellulose using anaerobic microbial consortium.

    Satyamurthy, P; Vigneshwaran, N

    2013-01-10

    Degradation of cellulose by anaerobic microbial consortium is brought about either by an exocellular process or by secretion of extracellular enzymes. In this work, a novel route for synthesis of nanocellulose is described where in an anaerobic microbial consortium enriched for cellulase producers is used for hydrolysis. Microcrystalline cellulose derived from cotton fibers was subjected to controlled hydrolysis by the anaerobic microbial consortium and the resultant nanocellulose was purified by differential centrifugation technique. The nanocellulose had a bimodal size distribution (43±13 and 119±9 nm) as revealed by atomic force microscopy. A maximum nanocellulose yield of 12.3% was achieved in a span of 7 days. While the conventional process of nanocellulose preparation using 63.5% (w/w) sulfuric acid resulted in the formation of whisker shaped nanocellulose with surface modified by sulfation, controlled hydrolysis by anaerobic microbial consortium yielded spherical nanocellulose also referred to as nano crystalline cellulose (NCC) without any surface modification as evidenced from Fourier transform infrared spectroscopy. Also, it scores over chemo-mechanical production of nanofibrillated cellulose by consuming less energy due to enzyme (cellulase) assisted catalysis. This implies the scope for use of microbial prepared nanocellulose in drug delivery and bio-medical applications requiring bio-compatibility. Copyright © 2012 Elsevier Inc. All rights reserved.

  14. Probing the phase composition of silicon films in situ by etch product detection

    Dingemans, G.; Donker, M. N. van den; Gordijn, A.; Kessels, W. M. M.; Sanden, M. C. M. van de

    2007-01-01

    Exploiting the higher etch probability for amorphous silicon relative to crystalline silicon, the transiently evolving phase composition of silicon films in the microcrystalline growth regime was probed in situ by monitoring the etch product (SiH 4 ) gas density during a short H 2 plasma treatment step. Etch product detection took place by the easy-to-implement techniques of optical emission spectroscopy and infrared absorption spectroscopy. The phase composition of the films was probed as a function of the SiH 4 concentration during deposition and as a function of the film thickness. The in situ results were corroborated by Raman spectroscopy and solar cell analysis

  15. Room temperature plasma oxidation: A new process for preparation of ultrathin layers of silicon oxide, and high dielectric constant materials

    Tinoco, J.C.; Estrada, M.; Baez, H.; Cerdeira, A.

    2006-01-01

    In this paper we present basic features and oxidation law of the room temperature plasma oxidation (RTPO), as a new process for preparation of less than 2 nm thick layers of SiO 2 , and high-k layers of TiO 2 . We show that oxidation rate follows a potential law dependence on oxidation time. The proportionality constant is function of pressure, plasma power, reagent gas and plasma density, while the exponent depends only on the reactive gas. These parameters are related to the physical phenomena occurring inside the plasma, during oxidation. Metal-Oxide-Semiconductor (MOS) capacitors fabricated with these layers are characterized by capacitance-voltage, current-voltage and current-voltage-temperature measurements. Less than 2.5 nm SiO 2 layers with surface roughness similar to thermal oxide films, surface state density below 3 x 10 11 cm -2 and current density in the expected range for each corresponding thickness, were obtained by RTPO in a parallel-plate reactor, at 180 mW/cm 2 and pressure range between 9.33 and 66.5 Pa (0.07 and 0.5 Torr) using O 2 and N 2 O as reactive gases. MOS capacitors with TiO 2 layers formed by RTPO of sputtered Ti layers are also characterized. Finally, MOS capacitors with stacked layers of TiO 2 over SiO 2 , both layers obtained by RTPO, were prepared and evaluated to determine the feasibility of the use of TiO 2 as a candidate for next technology nodes

  16. Effect of hydrogen on the microstructure of silicon carbide

    Fischman, G.S.

    1985-01-01

    The effect of hydrogenation on the microstructure of a pressureless sintered silicon carbide was studied. Samples which were annealed in a 40:60 mole % H 2 :Ar atmosphere at 1400 0 C for 50 hours were microstructurally compared with unannealed samples and samples that had been annealed in a similar manner but using an argon atmosphere. The results were also compared with microstructural results obtained from in situ studies using both hydrogen and argon atmospheres. These results were compared with a thermodynamic model which was constructed using a free energy minimization technique. The observed effects of hydrogenation were surface decarburization and amorphization throughout the silicon carbide material. Other observations include the thermally induced growth of microcrystalline silicon and accelerated amorphization around the silicon microcrystals in samples used in hydrogen in situ studies. An analysis of the microstructure of the reference material was also performed

  17. Thin film silicon modules: contributions to low cost industrial production

    Shah, A. [Universite de Neuchatel, Neuchatel (Switzerland)

    2005-07-01

    This final report for the Swiss Federal Office of Energy (SFOE) discusses the research work done during the two-year period 2003-04 at the Thin-Film Solar Cell Laboratory of the Institute of Microtechnology (IMT) at the University of Neuchatel in Switzerland. The transition from fundamental research work to concrete industrialisation issues, and changes within the research staff are discussed. The main results of the work done are presented, including basic techniques for the production of p-i-n solar cells on glass, new technologies for the deposition of n-i-p cells on low-cost flexible substrates and the optimisation of zinc oxide deposition methods. The key role played by substrate chemistry and roughness in the nucleation and growth of micro-crystalline silicon layers is looked at and diagnostic tools for the analysis of micro-crystalline solar cells are discussed.

  18. Silicon Thin-Film Solar Cells

    Guy Beaucarne

    2007-01-01

    with plasma-enhanced chemical vapor deposition (PECVD. In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

  19. Light trapping with plasmonic back contacts in thin-film silicon solar cells

    Paetzold, Ulrich Wilhelm

    2013-02-08

    small potential for increasing the reflection at the back contact with dielectric interlayers of even lower refractive index, such as SiO{sub 2} and air, is demonstrated. The light-trapping effect of two types of plasmonic back contacts, which make use of large and efficiently scattering Ag nanostructures, is studied in thin-film silicon solar cell prototypes. The first type of plasmonic back contact applies non-ordered Ag nanostructures. The preparation, characterization and three-dimensional electromagnetic simulations of these back contacts with various distributions of non-ordered Ag nanostructures are presented. Measured reflectance spectra of the Ag back contacts with non-ordered nanostructures are correlated with reflectance spectra derived from three-dimensional electromagnetic simulations of isolated nanostructures on Ag back contacts. A microcrystalline silicon solar cell fabricated on one type of plasmonic Ag back contact with non-ordered Ag nanostructures shows a significantly enhanced plasmonic light trapping when compared with a flat solar cell. The second type of plasmonic back contact applies periodic arrangements of plasmonic Ag nanostructures in a square lattice at the surface of the Ag back contact. It is called a plasmonic reflection grating back contact. A particular advantage of this device is the control of the scattering angles via the diffraction orders of the grating while taking advantage of the efficient plasmon-induced light scattering at the Ag nanostructures. The plasmonic reflection grating back contacts are prepared with a nanoimprint process. The prototype microcrystalline silicon solar cells exhibit a very good light-trapping effect. Even in comparison with solar cells with a state-of-the-art random texture for light trapping, an enhanced light-trapping effect is demonstrated for a solar sell with a plasmonic reflection grating of optimized period. Based on electromagnetic simulations, the light-trapping effect is explained from the

  20. Characterization of Urea Versus hmta in the Preparation of Zinc Oxide NANOSTRUCTURES by Catalytic Immersion Method Grown on Gold-seeded Silicon Substrate

    Azlinda Abdul Aziz; Khusaimi, Z.; Rusop, M.

    2011-01-01

    Zinc oxide (ZnO) nano structured prepared by immersed method were successfully grown on gold-seeded silicon substrate using Zinc nitrate hexahydrate (Zn(NO 3 ) 2 .6H 2 O) as a precursor was stabilized by a non-toxic urea (CH 4 N 2 O) in a ratio of 1:2 and 1:1 ratio of hexamethylene tetraamine (HMTA). The effect of changing the stabilizer of ZnO solution on the crystal structure, morphology and photoluminescence properties of the resultant ZnO is investigated. X-ray diffraction of the synthesized ZnO shows hexagonal zincite structure. The morphology of the ZnO was characterizing using Field Emission Scanning Electron Microscope (FESEM). The growth of ZnO using urea as stabilizer shows the clusters of ZnO nano flower with serrated broad petals and sharp tips of approximately 25 nm were interestingly formed. ZnO in HMTA showed growth of nano rods. The structures has high surface area, is a potential metal oxide nano structures to be develop for optoelectronic devices and chemical sensors. The formation of ZnO nano structures is found to be significantly affected by the stabilizer. (author)

  1. Study of the effect of the deposition parameters on the structural, electric and optical characteristics of polymorphous silicon films prepared by low frequency PECVD

    Moreno, M., E-mail: mmoreno@inaoep.mx [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Torres, A. [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Ambrosio, R. [Universidad Autonoma de Ciudad Juarez, Electrical Deparment, Chihuahua (Mexico); Zuniga, C.; Torres-Rios, A.; Monfil, K.; Rosales, P.; Itzmoyotl, A. [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico)

    2011-10-25

    In this work we present our results on the deposition and characterization of polymorphous silicon (pm-Si:H) films prepared by low frequency plasma enhanced chemical vapor deposition (LF-PECVD). We have studied the effect of the plasma deposition parameters (as the chamber pressure and gas flow rates of SiH{sub 4} and H{sub 2}) on the structural, electric, and optical characteristics of the films. The temperature dependence of conductivity ({sigma}(T)), activation energy (E{sub a}), optical band gap (E{sub g}) and deposition rate (V{sub d}) were extracted for pm-Si:H films deposited at different pressure values and different gas flow rates. We observed that the chamber pressure is an important parameter that has a significant effect on the electric characteristics, and as well on the morphology of the pm-Si:H films (deduced from atomic force microscopy). It was found an optimal pressure range, in order to produce pm-Si:H films with high E{sub a} and room temperature conductivity, {sigma}{sub RT}, which are key parameters for thermal detection applications.

  2. Study of the effect of the deposition parameters on the structural, electric and optical characteristics of polymorphous silicon films prepared by low frequency PECVD

    Moreno, M.; Torres, A.; Ambrosio, R.; Zuniga, C.; Torres-Rios, A.; Monfil, K.; Rosales, P.; Itzmoyotl, A.

    2011-01-01

    In this work we present our results on the deposition and characterization of polymorphous silicon (pm-Si:H) films prepared by low frequency plasma enhanced chemical vapor deposition (LF-PECVD). We have studied the effect of the plasma deposition parameters (as the chamber pressure and gas flow rates of SiH 4 and H 2 ) on the structural, electric, and optical characteristics of the films. The temperature dependence of conductivity (σ(T)), activation energy (E a ), optical band gap (E g ) and deposition rate (V d ) were extracted for pm-Si:H films deposited at different pressure values and different gas flow rates. We observed that the chamber pressure is an important parameter that has a significant effect on the electric characteristics, and as well on the morphology of the pm-Si:H films (deduced from atomic force microscopy). It was found an optimal pressure range, in order to produce pm-Si:H films with high E a and room temperature conductivity, σ RT , which are key parameters for thermal detection applications.

  3. Preparation and properties of lauric acid/silicon dioxide composites as form-stable phase change materials for thermal energy storage

    Fang Guiyin; Li Hui; Liu Xu

    2010-01-01

    Form-stable lauric acid (LA)/silicon dioxide (SiO 2 ) composite phase change materials were prepared using sol-gel methods. The LA was used as the phase change material for thermal energy storage, with the SiO 2 acting as the supporting material. The structural analysis of these form-stable LA/SiO 2 composite phase change materials was carried out using Fourier transformation infrared spectroscope (FT-IR). The microstructure of the form-stable composite phase change materials was observed by a scanning electronic microscope (SEM). The thermal properties and thermal stability were investigated by a differential scanning calorimeter (DSC) and a thermogravimetric analysis apparatus (TGA), respectively. The SEM results showed that the LA was well dispersed in the porous network of SiO 2 . The DSC results indicated that the melting latent heat of the form-stable composite phase change material is 117.21 kJ kg -1 when the mass percentage of the LA in the SiO 2 is 64.8%. The results of the TGA showed that these materials have good thermal stability. The form-stable composite phase change materials can be used for thermal energy storage in waste heat recovery and solar heating systems.

  4. Preparation of thin hexagonal highly-ordered anodic aluminum oxide (AAO) template onto silicon substrate and growth ZnO nanorod arrays by electrodeposition

    Chahrour, Khaled M.; Ahmed, Naser M.; Hashim, M. R.; Elfadill, Nezar G.; Qaeed, M. A.; Bououdina, M.

    2014-12-01

    In this study, anodic aluminum oxide (AAO) templates of Aluminum thin films onto Ti-coated silicon substrates were prepared for growth of nanostructure materials. Hexagonally highly ordered thin AAO templates were fabricated under controllable conditions by using a two-step anodization. The obtained thin AAO templates were approximately 70 nm in pore diameter and 250 nm in length with 110 nm interpore distances within an area of 3 cm2. The difference between first and second anodization was investigated in details by in situ monitoring of current-time curve. A bottom barrier layer of the AAO templates was removed during dropping the voltage in the last period of the anodization process followed by a wet etching using phosphoric acid (5 wt%) for several minutes at ambient temperature. As an application, Zn nanorod arrays embedded in anodic alumina (AAO) template were fabricated by electrodeposition. Oxygen was used to oxidize the electrodeposited Zn nanorods in the AAO template at 700 °C. The morphology, structure and photoluminescence properties of ZnO/AAO assembly were analyzed using Field-emission scanning electron microscope (FESEM), Energy dispersive X-ray spectroscopy (EDX), Atomic force microscope (AFM), X-ray diffraction (XRD) and photoluminescence (PL).

  5. Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

    Jiao Bao-Chen; Zhang Xiao-Dan; Wei Chang-Chun; Sun Jian; Ni Jian; Zhao Ying

    2011-01-01

    Indium doped zinc oxide (ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82×10 −3 Ω·cm and particle grains. The double-layers structure is designed to fabricate the ZnO:In thin film with low resistivity (2.58×10 −3 Ω·cm) and good surface morphology. It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substrate-layer, and the second-layer plays a large part in the resistivity of the double-layer ZnO:In thin film. Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region. Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  6. Porous silicon gettering

    Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  7. Physical properties of P and B doped microcrystalline SI:H deposited by PECVD

    Rubino, A.; Addonizio, M.L.; Conte, G.; Nobile, G.; Terzini, E.

    1993-01-01

    Boron and phosphorus doped high conductivity microcrystalline thin films were deposited in a PECVD reactor. This paper reports conductivities as high as 3 and 41 S/cm for B and P doped materials respectively on films deposited at 210 degrees C. The conductivity, as well as, the microcrystalline fraction increase for the n layer with decreasing RF power, while, for the p material, an increase of power is needed to improve the film characteristics. The conductivity prefactor, as well as, the conductivity itself as a function of the activation energy show a slope inversion for both n and p materials at an activation energy of about 40 meV and 80 meV respectively. Different possible transport mechanisms are examined in order to explain the experimental data

  8. Investigation of the powder flow behaviour of binary mixtures of microcrystalline celluloses and paracetamol

    Ira Soppela

    2010-03-01

    Full Text Available The flow behaviour of binary mixtures of paracetamol and different grades of microcrystalline celluloses (Avicel® PH101, PH102 and PH200 was studied using a new testing method. The effect of physical characteristics of the powder including tribocharging and the addition of lubricant on the flow properties of the different mixtures was investigated. As expected, the flowability of the samples was affected both by the amount of paracetamol and the physical properties of microcrystalline celluloses (MCC and the mixtures. The effect of lubricant varied depending on the MCC grade: magnesium stearate was able to improve the flowability of the mixtures containing PH102 and PH200 while it did not affect the flowability of PH101. Multivariate analysis showed that the flow of the binary excipient-drug mixtures through an orifice is affected by several phenomena, such as charging, surface moisture, carrier payload and particle size.

  9. Spherical composite particles of rice starch and microcrystalline cellulose: A new coprocessed excipient for direct compression

    Limwong, Vasinee; Sutanthavibul, Narueporn; Kulvanich, Poj

    2004-01-01

    Composite particles of rice starch (RS) and microcrystalline cellulose were fabricated by spray-drying technique to be used as a directly compressible excipient. Two size fractions of microcry stalline cellulose, sieved (MCS) and jet milled (MCJ), having volumetric mean diameter (D50) of 13.61 and 40.51 μm, respectively, were used to form composite particles with RS in various mixing ratios. The composite particles produced were evaluated for their powder and compression properties. Although ...

  10. Mussel-inspired fabrication of konjac glucomannan/microcrystalline cellulose intelligent hydrogel with pH-responsive sustained release behavior.

    Wang, Lin; Du, Yu; Yuan, Yi; Mu, Ruo-Jun; Gong, Jingni; Ni, Yongsheng; Pang, Jie; Wu, Chunhua

    2018-07-01

    Intelligent hydrogels are attractive biomaterials for various applications, however, fabricating a hydrogel with both adequate self-healing ability and mechanical properties remains a challenge. Herein, a series of novel intelligent konjac glucomannan (KGM)/microcrystalline cellulose (MCC) hydrogels were prepared vis the mussel-inspired chemistry. MCC was firstly functionalized by the oxidative polymerization of dopamine, and the intelligent hydrogels were obtained by mixing aqueous solutions of KGM and functionalized MCC (PDMCC). By introducing PDMCC, a more compact interconnected porous structure formed for the resulting hydrogels. The self-healing ability and mechanical properties of intelligent hydrogels were dependence on the PDMCC content. Compared with KGM hydrogels, KGM/PDMCC hydrogels exhibited a more distinct pH sensitivity and a lower initial burst release, which was attributed to the compact structure and strong intermolecular hydrogen bond interaction between PDMCC and KGM. These results suggest that the KGM/PDMCC intelligent hydrogels may be promising carriers for controlled drug delivery. Copyright © 2018 Elsevier B.V. All rights reserved.

  11. Comparative evaluation of the powder and compression properties of various grades and brands of microcrystalline cellulose by multivariate methods.

    Haware, Rahul V; Bauer-Brandl, Annette; Tho, Ingunn

    2010-01-01

    The present work challenges a newly developed approach to tablet formulation development by using chemically identical materials (grades and brands of microcrystalline cellulose). Tablet properties with respect to process and formulation parameters (e.g. compression speed, added lubricant and Emcompress fractions) were evaluated by 2(3)-factorial designs. Tablets of constant true volume were prepared on a compaction simulator at constant pressure (approx. 100 MPa). The highly repeatable and accurate force-displacement data obtained was evaluated by simple 'in-die' Heckel method and work descriptors. Relationships and interactions between formulation, process and tablet parameters were identified and quantified by multivariate analysis techniques; principal component analysis (PCA) and partial least square regressions (PLS). The method proved to be able to distinguish between different grades of MCC and even between two different brands of the same grade (Avicel PH 101 and Vivapur 101). One example of interaction was studied in more detail by mixed level design: The interaction effect of lubricant and Emcompress on elastic recovery of Avicel PH 102 was demonstrated to be complex and non-linear using the development tool under investigation.

  12. Effects of electron beam radiation dose on the compatibilization behaviour in recycled polypropylene/microcrystalline cellulose composites

    Samat, N.; Motsidi, S. N. R.; Lazim, N. H. M.

    2018-01-01

    The purpose of this research was to evaluate the influence of dose level of electron beam on the compatibilization behavior of recycled polypropylene (rPP) in rPP/microcrystalline cellulose (MCC) composites. Initially, the rPP was irradiated with various dose of electron beam (5 kGy up to 250 kGy) which then mixed with unirradiated rPP (u-rPP) at a ratio of 30:70 respectively. The composites were prepared by incorporating a series wt% of MCC fibers into rPP (u-rPP : i-rPP) using extruder and finally moulded with an injection moulding machine. The compatibility behavior of irradiated rPP (i-rPP) were analysed with mechanical tensile and thermal methods. The results of mechanical analysis showed great improvement in tensile modulus but an increase in radiation dosage gradually decreased this property. Nevertheless, the tensile strength exhibited a minor effect. The thermal stability of composites is lowered with increase in the absorbed dose, more significantly at higher content of MCC. Fracture surface observations reveal adhesion between the cellulose and rPP matrix.

  13. Large-scale synthesis of double cauliflower-like Sb2S3 microcrystallines by hydrothermal method

    Wu, Lei; Xu, Hanyue; Han, Qiaofeng; Wang, Xin

    2013-01-01

    Highlights: •Highly uniform double cauliflower-like Sb 2 S 3 particles were synthesized via hydrothermal method. •Influence of reaction conditions on the morphology of the products was discussed. •Double cauliflower-like Sb 2 S 3 superstructures revealed broad spectrum response. -- Abstract: The double cauliflower-like Sb 2 S 3 superstructures assembled by nanorods were prepared using SbCl 3 and Na 2 S⋅9H 2 O as raw materials, dodecyltrimethylammonium bromide (DTAB, C 15 H 31 BrN) as surfactant under acidic condition at 180 °C for 30 h. The structure, morphology and composition of the product were characterized by X-ray diffraction pattern (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and energy diffraction spectroscopy (EDS). The effect of reaction conditions including temperature, reaction time and surfactants on the sample morphology was discussed and a possible mechanism for the formation of cauliflower-like Sb 2 S 3 was proposed. The cauliflower-like Sb 2 S 3 microcrystallines revealed broad spectrum response, which may have a good application prospect in solar energy utilization and photoelectric conversion fields

  14. Two-component self-assembly with solvent leading to "wet" and microcrystalline organogel fibers.

    Löfman, Miika; Lahtinen, Manu; Rissanen, Kari; Sievänen, Elina

    2015-01-15

    The microcrystalline fibers of N-(2-aminoethyl)-3α-hydroxy-5β-cholan-24-amide 1 provided a useful model system for studying the complex relationship between morphology, experimental parameters, solvent, and the phenomenon of organogelation. The presence of solvents in the solid forms of 1 along with crystallization behavior suggested solvate formation and polymorphic behavior. Forty solid state- and xerogel samples of 1 formed in organic solvents and in three categories of experimental conditions were analyzed with single crystal X-ray diffraction (XRD), powder X-ray diffraction (PXRD), Raman microscopy, and attenuated total reflection Fourier-transform infrared spectroscopy (ATR FTIR). Two polymorphs and four isostructural aromatic solvates of 1 were found among some unknown forms in the samples. Single crystal X-ray structures of one polymorph and bromobenzene solvate were obtained, the latter from a xerogel. Multiple crystal forms could be present in a sample, and their contributions to gelation were estimated taking the experimental conditions into account. Gelator 1 could act as a variable component gelator, either alone or in combination with an aromatic solvent. The research brings new insight into the structures of microcrystalline organogel fibers, linking solvate/inclusion crystal formation with microcrystalline fibers of an organogelator for the first time. Copyright © 2014 Elsevier Inc. All rights reserved.

  15. Simultaneous solid phase extraction of cobalt, strontium and cesium from liquid radioactive waste using microcrystalline naphthalene

    Hamed, Mostafa Mohamed; Attallah, Mohamed Fathy; Metwally, Sayed Sayed

    2014-01-01

    Most of the procedures developed for the extraction of cobalt, strontium and cesium by solid phase extraction do not employ simultaneous extraction of them. In this study, rapid simultaneous removal of Co 2+ , Sr 2+ and Cs + on microcrystalline naphthalene as solid-phase extractant was investigated. These ions were allowed to form chelates with oxine and then adsorbed on freshly microcrystalline naphthalene from aqueous solutions. The solid phase extraction procedure (SPE) was optimized by using model solution containing Co 2+ , Sr 2+ and Cs + in batch system. The effects of different parameters such as variation in pH, reagent concentration, standing time, naphthalene solution concentration and contact time on the simultaneous removal of these ions was studied. The obtained results indicated that, sorption was found to be rapid, and the percentage removal of Co 2+ , Sr 2+ and Cs + was found to be 98, 79 and 68% within 10 min, respectively. The kinetics of the sorption process was investigated to understand the kinetic characteristics of sorption of metal chelates onto microcrystalline naphthalene. The developed procedure has been successfully applied to the removal and recovery of 60 Co and 134 Cs from liquid radioactive waste. The parameters can be used for designing a plant for treatment of wastewater economically.

  16. Facile preparation of carbon nanotubes-graphene hybrids and the effect of aspect ratio of carbon nanotubes on electrical and thermal properties of silicone rubber based composites

    Zhao, Shizhen; Bai, Lu; Zheng, Junping

    2018-01-01

    Thermal exfoliation, as an effective and easily scalable method, was widely used to produce graphene (GE). In order to prevent the severe stacking of GE sheets after thermal exfoliation process, a facile technique was used to solve this problem through the barrier effect of carbon nanotubes (CNTs). Two kinds of CNTs with different aspect ratios (AR) were taken to prepare CNTs-GE hybrids using this technique, and then the effect of AR of CNTs (namely CNTs-L for low AR and CNTs-H for high AR) in the hybrids on the performance of silicone rubber (SR) composites was investigated. The results indicate that the presence of CNTs can effectively impede the stacking of GE sheets and the hybrids are dispersed uniformly in the SR matrix. With the addition of CNTs-GE hybrids, the resulted SR composites exhibit greatly improved electrical and thermal properties, especially for the composites filled with CNTs-H-GE hybrid. At the hybrids content of 3.0 wt%, the volume resistivity of CNTs-H-GE/SR composite is 5 × 104 Ω cm (about 10 orders of magnitude decrease compared with pure SR). And the thermal conductivity increases by 78% compared to the pure SR. But as for the CNTs-L-GE/SR composite, the corresponding values are 3 × 106 Ω cm and 59%, respectively. In terms of thermal stability, the CNTs-H-GE/SR composite containing 1.0 wt% hybrid exhibits the maximum improvement of initial degradation temperature (419 °C) compared with the CNTs-L-GE/SR composite (393 °C) and pure SR (365 °C).

  17. Metal induced crystallization of silicon germanium alloys

    Gjukic, M.

    2007-05-15

    In the framework of this thesis the applicability of the aluminium-induced layer exchange on binary silicon germanium alloys was studied. It is here for the first time shown that polycrstalline silicon-germanium layers can be fabricated over the whole composition range by the aluminium-induced layer exchange. The experimental results prove thet the resulting material exhibits a polycrystalline character with typocal grain sizes of 10-100 {mu}m. Raman measurements confirm that the structural properties of the resulting layers are because of the large crystallites more comparable with monocrystalline than with nano- or microcrystalline silicon-germanium. The alloy ratio of the polycrystalline layer correspondes to the chemical composition of the amorphous starting layer. The polycrystalline silicon-germanium layers possess in the range of the interband transitions a reflection spectrum, as it is otherwise only known from monocrystalline reference layers. The improvement of the absorption in the photovoltaically relevant spectral range aimed by the application of silicon-germanium could be also proved by absorption measurments. Strongly correlated with the structural properties of the polycrystalline layers and the electronic band structure resulting from this are beside the optical properties also the electrical properties of the material, especially the charge-carrier mobility and the doping concentration. For binary silicon-germanium layers the hole concentration of about 2 x 10{sup 18} cm{sup -3} for pure silicon increrases to about 5 x 10{sup 20} cm{sub -3} for pure germanium. Temperature-resolved measurements were applied in order to detect doping levels respectively semiconductor-metal transitions. In the last part of the thesis the hydrogen passivation of polycrystalline thin silicon-germanium layers, which were fabricated by means of aluminium-induced layer exchange, is treated.

  18. Preparing hydroxyapatite-silicon composite suspensions with homogeneous distribution of multi-walled carbon nano-tubes for electrophoretic coating of NiTi bone implant and their effect on the surface morphology

    Khalili, Vida; Khalil-Allafi, Jafar; Xia, Wei; Parsa, Alireza B.; Frenzel, Jan; Somsen, Christoph; Eggeler, Gunther

    2016-01-01

    Graphical abstract: - Highlights: • The stable composite suspensions of hydroxyapatite, silicon and multi-walled carbon nano-tubes was prepared using functionalization of and multi-walled carbon nano-tubes in HNO_3 vapor and triethanolamine as dispersing agent. • The zeta potential of composite suspensions is less than that of hydroxyapatite suspension. • The silicon particles presence in suspension causes to decrease the charge carrier in suspension and current density during electrophoretic deposition. • The orientation of multi-walled carbon nano-tubes to parallel direction of the applied electric field during electrophoretic deposition can facilitate their moving towards the cathode and increase current density. • The more zeta potential of suspension, the lower roughness of coatings during electrophoretic deposition. - Abstract: Preparing a stable suspension is a main step towards the electrophoretically depositing of homogeneous and dense composite coatings on NiTi for its biomedical application. In the present study, different composite suspensions of hydroxyapatite, silicon and multi-walled carbon nano-tubes were prepared using n-butanol and triethanolamine as media and dispersing agent, respectively. Multi-walled carbon nanotubes were first functionalized in the nitric acid vapor for 15 h at 175 °C, and then mixed into suspensions. Thermal desorption spectroscopy profiles indicate the formation of functional groups on multi-walled carbon nano-tubes. An excellent suspension stability can be achieved for different amounts of triethanolamine. The amount of triethanolamine can be increased by adding a second component to a stable hydroxyapatite suspension due to an electrostatic interaction between components in suspension. The stability of composite suspension is less than that of the hydroxyapatite suspension, due to density differences, which under the gravitational force promote the demixing. The scanning electron microscopy images of the

  19. Rapid solidification for preparation of high Tc superconductors

    Yavari, A.R.

    1988-01-01

    High Tc superconducting oxides are prepared in two different ways using rapid solidification: by oxidation of microcrystalline or amorphous tapes obtained by quenching the liquid alloy and via crystallisation of the amorphous oxide obtained by rapid quenching of the oxide melt. This technique is applied for the first time to the BiCaSrCuO family [fr

  20. Preparation of silicon oxynitrocarbide (SiONC) and of its ceramic-fibre-composites via hydrosilylation/radical polymerization/pyrolysis

    Strachota, Adam; Černý, Martin; Chlup, Zdeněk; Šlouf, Miroslav; Brus, Jiří; Pleštil, Josef; Sucharda, Zbyněk; Havelcová, Martina; Halasová, Martina

    423-424, 1 September (2015), s. 9-17 ISSN 0022-3093 R&D Projects: GA ČR GAP107/12/2445 Institutional support: RVO:61389013 ; RVO:67985891 ; RVO:68081723 Keywords : silicon oxynitrocarbide * silicon oxycarbide * hydrosilylation Subject RIV: CD - Macromolecular Chemistry; JI - Composite Materials (USMH-B); JL - Materials Fatigue, Friction Mechanics (UFM-A) Impact factor: 1.825, year: 2015

  1. Hydrogen in amorphous silicon

    Peercy, P.S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

  2. Silicon detectors

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  3. Laser annealed HWCVD and PECVD thin silicon films. Electron field emission

    O'Neill, K.A.; Shaikh, M.Z.; Lyttle, G.; Anthony, S.; Fan, Y.C.; Persheyev, S.K.; Rose, M.J.

    2006-01-01

    Electron Field Emission (FE) properties of various laser annealed thin silicon films on different substrates were investigated. HWCVD microcrystalline and PECVD amorphous silicon films were irradiated with Nd : YAG and XeCl Excimer lasers at varying energy densities. Encouraging FE results were mainly from XeCl Excimer laser processed PECVD and HWCVD films on metal backplanes. FE measurements were complemented by the study of film surface morphology. Geometric field enhancement factors from surface measurements and Fowler-Nordheim Theory (FNT) were compared. FE properties of the films were also found to be particularly influenced by the backplane material

  4. Preparation of YBCO on YSZ layers deposited on silicon and sapphire by MOCVD: influence of the intermediate layer on the quality of the superconducting film

    Garcia, G.; Casado, J.; Llibre, J.; Doudkowski, M.; Santiso, J.; Figueras, A.; Schamm, S.; Dorignac, D.; Grigis, C.; Aguilo, M.

    1995-01-01

    YSZ buffer layers were deposited on silicon and sapphire by MOCVD. The layers deposited on silicon were highly oriented along [100] direction without in-plane orientation, probably because the existence of the SiO 2 amorphous interlayer. In contrast, epitaxial YSZ was obtained on (1-102) sapphire showing an in-plane texture defined by the following relationships: (100) YSZ // (1-102) sapphire and (110) YSZ // (01-12) sapphire. Subsequently, YBCO films were deposited on YSZ by MOCVD. Structural, morphological and electrical characterization of the superconducting layers were correlated with the in-plane texture of the buffer layers. (orig.)

  5. Esterification of microcrystalline cellulose by binary mixture of pyromellitic dianhydride and boric acid

    Arslanov, Sh.S.; Petropavlovskij, G.A.

    1996-01-01

    The reaction between microcrystalline cellulose and boric acid in the medium of dimethyl-sulfoxide (DMSO) and in solid phase has been studied. By the methods of IR and 1 H NMR spectroscopy it has been shown that the triatment of cellulose with boric acid solution in DMSO, while the latter is removed under vacuum conditions and cellulose is heated up to 170 deg C, gives rise to formation of unstable esters of cellulose and boric acid. Pyromellitate-borates of cellulose are formed in the course of cellulose reaction with a mixture of boric acid and pyromellite dianhydride. 9 refs., 3 figs., 1 tab

  6. High-temperature oxidation of silicide-aluminide layer on the TiAl6V4 alloy prepared by liquid-phase siliconizing

    Kubatík, Tomáš František

    2016-01-01

    Roč. 50, č. 2 (2016), s. 257-261 ISSN 1580-2949 Institutional support: RVO:61389021 Keywords : TiAl6V4 * silicides * high-temperature oxidation * liquid-phase silicon izing Subject RIV: JG - Metallurgy Impact factor: 0.436, year: 2016

  7. Defects study of hydrogenated amorphous silicon samples and their relation with the substrate and deposition conditions

    Darwich, R.

    2009-07-01

    The goal of this work is to study the properties of the defects aiming to explore the types of defects and the effect of various deposition parameters such as substrate temperature, the kind of the substrate, gas pressure and deposition rate. Two kinds of samples have been used; The first one was a series of Schottky diodes, and the second one a series of solar cells (p-i-n junction) deposited on crystalline silicon or on corning glass substrates with different deposition parameters. The deposition parameters were chosen to obtain materials whose their structures varying from amorphous to microcrystalline silicon including polymorphous silicon. Our results show that the polymorphous silicon samples deposited at high deposition rates present the best photovoltaic properties in comparison with those deposited at low rates. Also we found that the defects concentration in high deposition rate samples is less at least by two orders than that obtained in low deposition rate polymorphous, microcrystalline and amorphous samples. This study shows also that there is no effect of the substrate, or the thin films of highly doped amorphous silicon deposited on the substrate, on the creation and properties of these defects. Finally, different experimental methods have been used; a comparison between their results has been presented. (author)

  8. Microcrystalline diamond cylindrical resonators with quality-factor up to 0.5 million

    Saito, Daisuke; Yang, Chen; Lin, Liwei [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States); Heidari, Amir [Department of Mechanical and Aerospace Engineering, University of California, Davis, California 95616 (United States); Najar, Hadi [Department of Electrical and Computer Engineering, University of California, Davis, California 95616 (United States); Horsley, David A. [Department of Mechanical and Aerospace Engineering, University of California, Davis, California 95616 (United States); Department of Electrical and Computer Engineering, University of California, Davis, California 95616 (United States)

    2016-02-01

    We demonstrate high quality-factor 1.5 mm diameter batch-fabricated microcrystalline diamond cylindrical resonators (CR) with quality-factors limited by thermoelastic damping (TED) and surface loss. Resonators were fabricated 2.6 and 5.3 μm thick in-situ boron-doped microcrystalline diamond films deposited using hot filament chemical vapor deposition. The quality-factor (Q) of as-fabricated CR's was found to increase with the resonator diameter and diamond thickness. Annealing the CRs at 700 °C in a nitrogen atmosphere led to a three-fold increase in Q, a result we attribute to thinning of the diamond layer via reaction with residual O{sub 2} in the annealing furnace. Post-anneal Q exceeding 0.5 million (528 000) was measured at the 19 kHz elliptical wineglass modes, producing a ring-down time of 8.9 s. A model for Q versus diamond thickness and resonance frequency is developed including the effects of TED and surface loss. Measured quality factors are shown to agree with the predictions of this model.

  9. An XRPD and EPR spectroscopy study of microcrystalline calcite bioprecipitated by Bacillus subtilis

    Perito, B.; Romanelli, M.; Buccianti, A.; Passaponti, M.; Montegrossi, G.; Di Benedetto, F.

    2018-05-01

    We report in this study the first XRPD and EPR spectroscopy characterisation of a biogenic calcite, obtained from the activity of the bacterium Bacillus subtilis. Microcrystalline calcite powders obtained from bacterial culture in a suitable precipitation liquid medium were analysed without further manipulation. Both techniques reveal unusual parameters, closely related to the biological source of the mineral, i.e., to the bioprecipitation process and in particular to the organic matrix observed inside calcite. In detail, XRPD analysis revealed that bacterial calcite has slightly higher c/a lattice parameters ratio than abiotic calcite. This correlation was already noticed in microcrystalline calcite samples grown by bio-mineralisation processes, but it had never been previously verified for bacterial biocalcites. EPR spectroscopy evidenced an anomalously large value of W 6, a parameter that can be linked to occupation by different chemical species in the next nearest neighbouring sites. This parameter allows to clearly distinguish bacterial and abiotic calcite. This latter achievement was obtained after having reduced the parameters space into an unbiased Euclidean one, through an isometric log-ratio transformation. We conclude that this approach enables the coupled use of XRPD and EPR for identifying the traces of bacterial activity in fossil carbonate deposits.

  10. Investigation and optimization of series connection of thin-film silicon solar modules; Untersuchung und Optimierung der Serienverschaltung von Silizium-Duennschicht-Solarmodulen

    Haas, Stefan

    2010-07-01

    The integrated series connection is an important and elementary part of a thin-film silicon solar module. The series connection leads to a reduction of Ohmic losses and an increase of the module voltage. After their deposition the different functional layers of a solar module must be patterned selectively to form a series connection. First the front contact, then the absorber, and finally the back contact is locally removed. The first step and the last step are needed to separate the contact layers (isolation step), the absorber patterning is used to expose the front contact and prepare the series interconnection. Usually laser ablation is used for patterning. The patterning of the front contact is overall a noncritical step. Therefore, this thesis exclusively investigates mechanisms that limit the process window of the absorber patterning and the back contact patterning. Especially for the absorber patterning on SnO{sub 2}-substrates the process window is very narrow. As too high pulse energies create a barrier layer on the SnO{sub 2}-window layer, which restricts the current flow in a series connected module. This barrier layer probably consists of SiO{sub 2} or an alloy of (Sn,Si)O{sub 2}. It arrises from redeposition of evaporated silicon. Ablation of the absorber without creating a barrier layer is only possible, when the silicon is not evaporated. Here the ablation is induced by the explosive out-diffusion of hydrogen from the silicon layer. On ZnO-substrates no significant barrier formation occurs. For this reason the process window is very broad. Patterning the back contact is the last isolation step. It is mainly restricted by an unavoidable deterioration of the absorber as well as a possible ablation of the window layer. The deterioration of the absorber in the vicinity of the patterning groove leads to parasitic dark currents for amorphous and for microcrystalline solar cells. The parasitic dark currents decrease the efficiency {eta} of a patterned

  11. Epitaxial growth of silicon for layer transfer

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  12. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.

    Ke, S Y; Yang, J; Qiu, F; Wang, Z Q; Wang, C; Yang, Y

    2015-11-06

    We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

  13. Analysis of structure and defects in thin silicon films deposited from hydrogen diluted silane

    Elzakker, G. van; Nadazdy, V.; Tichelaar, F.D.; Metselaar, J.W.; Zeman, M.

    2006-01-01

    Thin silicon layers have been deposited from silane diluted with hydrogen. The dilution ratio R (R = [H 2 ]/[SiH 4 ]) has been varied between R = 0 and R = 40. The structural properties of Si:H films have been studied using transmission electron microscopy imaging and Raman spectroscopy. The phase evolution from the amorphous phase into the mixed and eventually microcrystalline phase strongly depends on the hydrogen dilution. The initiation of the microcrystalline growth occurs between R = 20 and R = 25. The phase transition becomes more abrupt with increasing hydrogen dilution. Optoelectronic properties of the layers have been determined. Increasing hydrogen dilution results in films with increasing effective defect density and Urbach energy, which is related to inhomogeneous growth. The charge deep-level transient spectroscopy technique (Q-DLTS) was applied for the first time on hydrogen diluted thin silicon films in order to investigate the energy distribution of the defect states in these layers as a function of the dilution ratio R. The Q-DLTS spectra indicate a difference in defect-state distribution when the films evolve from the amorphous phase into the microcrystalline phase

  14. Sub-parts per million NO2 chemi-transistor sensors based on composite porous silicon/gold nanostructures prepared by metal-assisted etching.

    Sainato, Michela; Strambini, Lucanos Marsilio; Rella, Simona; Mazzotta, Elisabetta; Barillaro, Giuseppe

    2015-04-08

    Surface doping of nano/mesostructured materials with metal nanoparticles to promote and optimize chemi-transistor sensing performance represents the most advanced research trend in the field of solid-state chemical sensing. In spite of the promising results emerging from metal-doping of a number of nanostructured semiconductors, its applicability to silicon-based chemi-transistor sensors has been hindered so far by the difficulties in integrating the composite metal-silicon nanostructures using the complementary metal-oxide-semiconductor (CMOS) technology. Here we propose a facile and effective top-down method for the high-yield fabrication of chemi-transistor sensors making use of composite porous silicon/gold nanostructures (cSiAuNs) acting as sensing gate. In particular, we investigate the integration of cSiAuNs synthesized by metal-assisted etching (MAE), using gold nanoparticles (NPs) as catalyst, in solid-state junction-field-effect transistors (JFETs), aimed at the detection of NO2 down to 100 parts per billion (ppb). The chemi-transistor sensors, namely cSiAuJFETs, are CMOS compatible, operate at room temperature, and are reliable, sensitive, and fully recoverable for the detection of NO2 at concentrations between 100 and 500 ppb, up to 48 h of continuous operation.

  15. Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method

    Najar, Adel

    2012-01-01

    We report on the structural and optical properties of porous silicon nanowires (PSiNWs) fabricated using silver (Ag) ions assisted electroless etching method. Silicon nanocrystallites with sizes <5 nm embedded in amorphous silica have been observed from PSiNW samples etched using the optimum hydrofluoric acid (HF) concentration. The strongest photoluminescence (PL) signal has been measured from samples etched with 4.8 M of HF, beyond which a significant decreasing in PL emission intensity has been observed. A qualitative model is proposed for the formation of PSiNWs in the presence of Ag catalyst. This model affirms our observations in PL enhancement for samples etched using HF <4.8 M and the eventual PL reduction for samples etched beyond 4.8 M of HF concentration. The enhancement in PL signals has been associated to the formation of PSiNWs and the quantum confinement effect in the Si nanocrystallites. Compared to PSiNWs without Si-O x, the HF treated samples exhibited significant blue PL peak shift of 100 nm. This effect has been correlated to the formation of defect states in the surface oxide. PSiNWs fabricated using the electroless etching method can find useful applications in optical sensors and as anti-reflection layer in silicon-based solar cells. © 2012 American Institute of Physics.

  16. Fenton chemistry-based detemplation of an industrially relevant microcrystalline beta zeolite. Optimization and scaling-up studies

    Ortiz-Iniesta, Maria Jesus; Melian-Cabrera, Ignacio

    A mild template removal of microcrystalline beta zeolite, based on Fenton chemistry, was optimized. Fenton detemplation was studied in terms of applicability conditions window, reaction rate and scale up. TGA and CHN elemental analysis were used to evaluate the detemplation effectiveness, while 'CP,

  17. Effect of environmental conditions on the mechanical properties and fungal degradation of polycaprolactone/microcrystalline cellulose/wood flour composites

    Ronald Sabo; Liwei Jin; Nicole Stark; Rebecca E. Ibach

    2013-01-01

    Polycaprolactone (PCL) filled with microcrystalline cellulose (MCC), wood flour (WF), or both were characterized before and after exposure to various environmental conditions for 60 days. PCL/WF composites had the greatest tensile strength and modulus compared to neat PCL or PCL composites containing MCC. Electron microscopy indicated better adhesion between WF...

  18. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    Zahra Ostadmahmoodi Do; Tahereh Fanaei Sheikholeslami; Hassan Azarkish

    2016-01-01

    Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method fo...

  19. Effect of TCO/μc-Si:H Interface Modification on Hydrogenated Microcrystalline Silicon Thin-Film Solar Cells

    Shin-Wei Liang

    2013-01-01

    Full Text Available The effects of H2 plasma exposure on optical, electrical, and structural properties of fluorine-doped tin oxide (FTO and AZO/FTO substrates have been investigated. With increasing the time of H2-plasma exposure, the hydrogen radical and ions penetrated through the FTO surface to form more suboxides such as SnO and metallic Sn, which was confirmed by the XPS analysis. The Sn reduction on the FTO surface can be effectively eliminated by capping the FTO with a very thin layer of sputtered aluminum-doped zinc oxide (AZO, as confirmed by the XPS analysis. By using the AZO/FTO as front TCO with the subsequent annealing, the p-i-n μc-Si:H cell exhibited a significantly enhanced JSC from 15.97 to 19.40 mA/cm2 and an increased conversion efficiency from 5.69% to 7.09%. This significant enhancement was ascribed to the effective elimination of the Sn reduction on the FTO surface by the thin AZO layer during the Si-based thin-film deposition with hydrogen-rich plasma exposure. Moreover, the subsequent annealing of the sputtered AZO could lead to less defects as well as a better interface of AZO/FTO.

  20. Silicon transport in sputter-deposited tantalum layers grown under ion bombardment

    Gallais, P.; Hantzpergue, J.J.; Remy, J.C.; Roptin, D.

    1988-01-01

    Tantalum was sputter deposited on (111) Si substrate under low-energy ion bombardment in order to study the effects of the ion energy on the silicon transport into the Ta layer. The Si substrate was heated up to 500 0 C during growth. For ion energies up to 180 eV silicon is not transported into tantalum and the growth temperature has no effect. An ion bombardment energy of 280 eV enhances the transport of silicon throughout the tantalum layer. Growth temperatures up to 300 0 C have no effect on the silicon transport which is mainly enhanced by the ion bombardment. For growth temperatures between 300 and 500 0 C, the silicon transport is also enhanced by the thermal diffusion. The experimental depth distribution of silicon is similar to the theoretical depth distribution calculated for the case of an interdiffusion. The ion-enhanced process of silicon transport is characterized by an activation energy of 0.4 eV. Silicon into the layers as-grown at 500 0 C is in both states, amorphous silicide and microcrystalline cubic silicon

  1. Progress in thin-film silicon solar cells based on photonic-crystal structures

    Ishizaki, Kenji; De Zoysa, Menaka; Tanaka, Yoshinori; Jeon, Seung-Woo; Noda, Susumu

    2018-06-01

    We review the recent progress in thin-film silicon solar cells with photonic crystals, where absorption enhancement is achieved by using large-area resonant effects in photonic crystals. First, a definitive guideline for enhancing light absorption in a wide wavelength range (600–1100 nm) is introduced, showing that the formation of multiple band edges utilizing higher-order modes confined in the thickness direction and the introduction of photonic superlattice structures enable significant absorption enhancement, exceeding that observed for conventional random scatterers. Subsequently, experimental evidence of this enhancement is demonstrated for a variety of thin-film Si solar cells: ∼500-nm-thick ultrathin microcrystalline silicon cells, few-µm-thick microcrystalline silicon cells, and ∼20-µm-thick thin single-crystalline silicon cells. The high short-circuit current densities and/or efficiencies observed for each cell structure confirm the effectiveness of using multiple band-edge resonant modes of photonic crystals for enhancing broadband absorption in actual solar cells.

  2. Combined effect of nitrogen doping and nanosteps on microcrystalline diamond films for improvement of field emission

    Mengui, U.A.; Campos, R.A.; Alves, K.A.; Antunes, E.F.; Hamanaka, M.H.M.O.; Corat, E.J.; Baldan, M.R.

    2015-01-01

    Highlights: • Hot filament chemical vapor deposition using methane, hydrogen and a solution of urea in methanol produced nitrogen-doped diamond films. • Diamonds had the grain morphology changed for long growth time (28 h), and the nitrogen doping were evaluated by Raman spectroscopy. • Field emission characterization shows a decrease up to 70% in threshold field, related to reference diamond layer. - Abstract: Nitrogen-doped microcrystalline diamond (N-MCD) films were grown on Si substrates using a hot filament reactor with methanol solution of urea as N source. Electrostatic self-assembly seeding of nanocrystalline diamond were used to obtain continuous and uniform films. Simultaneous changes in grains morphology and work function of diamond by nitrogen doping decreased the threshold field and the angular coefficient of Fowler–Nordhein plots. The field emission properties of our N-MCD films are comparable to carbon nanotube films

  3. Formation of microcrystalline germanium (μc-Ge:H) films from inductively coupled plasma CVD

    Okamoto, Y.; Makihara, K.; Higashi, S.; Miyazaki, S.

    2005-01-01

    Inductively coupled RF plasma of H 2 -diluted GeH 4 gas was applied to the growth of hydrogenated microcrystalline germanium (μc-Ge:H) films on quartz in a reactor with an external single-turn antenna placed on quartz plate window parallel to the substrate. The deposition rate, the crystallinity and the thickness of an amorphous incubation layer formed in the early stages of the film growth were evaluated as functions of GeH 4 concentration, gas flow rate, substrate temperature and the distance between the antenna and the grounded substrate susceptor. We demonstrated the growth of highly crystalized Ge films at a rate as high as 0.9 nm/s at 250 deg. C using a 8.3% GeH 4 diluted with H 2

  4. Superconducting Sweet-Spot in Microcrystalline Graphite Revealed by Point-Contact Spectroscopy

    Arnold, F.; Nyéki, J.; Saunders, J.

    2018-05-01

    In this letter we describe the observation of a magnetic field dependent electronic gap, suggestive of local superconductivity, in the point-contact spectrum of micro-crystalline graphite. Magnetic field dependent point-contact spectroscopy was carried out at a temperature of 1.8K using an etched aluminium tip. At zero field a gap structure in the differential conductance is observed, showing a gap of Δ = 4.2 meV. On applying magnetic fields of up to 500mT, this gap gradually closes, following the theoretical prediction by Ginzburg and Landau for a fully flux-penetrated superconductor. By applying BCS-theory, we infer a critical superconducting temperature of 14K.

  5. Ammonia-free chemical bath method for deposition of microcrystalline cadmium selenide films

    Lokhande, C.D.; Lee, Eun-Ho; Jung, Kwang-Deog; Joo, Oh-Shim

    2005-01-01

    Chemical deposition of cadmium selenide (CdSe) films has been carried out from alkaline aqueous solution containing Cd 2+ and Se 2- ions. In general, the alkaline pH of the CdSe deposition bath has been adjusted by addition of liquid ammonia. However, the use of ammonia in large-scale chemical deposition method represents an environmental problem due to its volatility and toxicity. The volatility of ammonia changes the pH of deposition bath and results into irreproducible film properties. In the present paper, ammonia-free and weak alkaline (pH < 9.0) chemical method for cadmium selenide film has been developed. The cadmium selenide films are microcrystalline (grain size 0.5-0.7 μm) with hexagonal crystal structure. These films are photoactive and therefore, useful in photo conversion of light into electrical power

  6. Long-living positron and positronium states in zeolites and microcrystalline oxides

    Kajcsos, Zs.; Liszkay, L.; Varga, L.; Lohonyai, L.; Lazar, K.

    1995-01-01

    Positron annihilation (PA) investigation were performed on zeolites (X, Y and ZSM-5) and on microcrystalline MgO, Al 2 O 3 and SiO 2 , providing long lifetime components attributed to o-Ps atoms. In addition to the positron lifetime (LT) measurements, the energy distribution (ED) of the annihilation gamma radiation spectrum was recorded in the 30 keV - 1.5 MeV range for different samples and was compared to reference distributions for Si and GaAs samples, where no long-living Ps states are formed. Apart from the strong correlation with the water content in the samples, the positron data collected testify much more pronounced positronium hosting features for powders of the mentioned oxides than for zeolites. Positron LT spectroscopy combined with recording of the ED of the annihilation radiation provides reliable information on the forming of long living 3γ states. (author) 15 refs.; 4 figs

  7. Combined effect of nitrogen doping and nanosteps on microcrystalline diamond films for improvement of field emission

    Mengui, U.A., E-mail: ursulamengui@gmail.com [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Campos, R.A.; Alves, K.A.; Antunes, E.F. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Hamanaka, M.H.M.O. [Centro de Tecnologia da Informação Renato Archer, Divisão de Superfícies de Interação e Displays, Rodovia D. Pedro I (SP 65) km 143.6, CP 6162, CEP 13089-500, Campinas, SP (Brazil); Corat, E.J.; Baldan, M.R. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil)

    2015-04-15

    Highlights: • Hot filament chemical vapor deposition using methane, hydrogen and a solution of urea in methanol produced nitrogen-doped diamond films. • Diamonds had the grain morphology changed for long growth time (28 h), and the nitrogen doping were evaluated by Raman spectroscopy. • Field emission characterization shows a decrease up to 70% in threshold field, related to reference diamond layer. - Abstract: Nitrogen-doped microcrystalline diamond (N-MCD) films were grown on Si substrates using a hot filament reactor with methanol solution of urea as N source. Electrostatic self-assembly seeding of nanocrystalline diamond were used to obtain continuous and uniform films. Simultaneous changes in grains morphology and work function of diamond by nitrogen doping decreased the threshold field and the angular coefficient of Fowler–Nordhein plots. The field emission properties of our N-MCD films are comparable to carbon nanotube films.

  8. Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition.

    Wang, Wei-Cheng; Tsai, Meng-Chen; Yang, Jason; Hsu, Chuck; Chen, Miin-Jang

    2015-05-20

    In this study, efficient nanotextured black silicon (NBSi) solar cells composed of silicon nanowire arrays and an Al2O3/TiO2 dual-layer passivation stack on the n(+) emitter were fabricated. The highly conformal Al2O3 and TiO2 surface passivation layers were deposited on the high-aspect-ratio surface of the NBSi wafers using atomic layer deposition. Instead of the single Al2O3 passivation layer with a negative oxide charge density, the Al2O3/TiO2 dual-layer passivation stack treated with forming gas annealing provides a high positive oxide charge density and a low interfacial state density, which are essential for the effective field-effect and chemical passivation of the n(+) emitter. In addition, the Al2O3/TiO2 dual-layer passivation stack suppresses the total reflectance over a broad range of wavelengths (400-1000 nm). Therefore, with the Al2O3/TiO2 dual-layer passivation stack, the short-circuit current density and efficiency of the NBSi solar cell were increased by 11% and 20%, respectively. In conclusion, a high efficiency of 18.5% was achieved with the NBSi solar cells by using the n(+)-emitter/p-base structure passivated with the Al2O3/TiO2 stack.

  9. High yield silicon carbide prepolymers

    Baney, R.H.

    1982-01-01

    Prepolymers which exhibit good handling properties, and are useful for preparing ceramics, silicon carbide ceramic materials and articles containing silicon carbide, are polysilanes consisting of 0 to 60 mole% (CH 3 ) 2 Si units and 40 to 100 mole% CH 3 Si units, all Si valences being satisfied by CH 3 groups, other Si atoms, or by H atoms, the latter amounting to 0.3 to 2.1 weight% of the polysilane. They are prepared by reducing the corresponding chloro- or bromo-polysilanes with at least the stoichiometric amount of a reducing agent, e.g. LiAlH 4 . (author)

  10. Preparation and properties of bisphenol-F based boron-phenolic resin/modified silicon nitride composites and their usage as binders for grinding wheels

    Lin, Chun-Te; Lee, Hsun-Tsing; Chen, Jem-Kun

    2015-01-01

    Highlights: • Bisphenol-F based boron-phenolic resins (B-BPF) with B−O bonds were synthesized. • The modified silicon nitride (m-SiN) was well dispersed and adhered in the B-BPF. • B-BPF/m-SiN composites have good thermal resistance and mechanical properties. • The grinding wheels bound by B-BPF/m-SiN have excellent grinding quality. - Abstract: In this study, phenolic resins based on bisphenol-F (BPF) were synthesized. Besides, ammonium borate was added in the synthesis process of BPF to form the bisphenol-F based boron-phenolic resins (B-BPF). The glass transition temperature, thermal resistance, flexural strength and hardness of B-BPF are respectively higher than those of BPF. This is due to the presence of new cross-link B−O bonds in the B-BPF. In addition, the 3-aminopropyltriethoxysilane modified silicon nitride powders (m-SiN) were fully mixed with B-BPF to form the B-BPF/m-SiN composites. The thermal resistance and mechanical properties of the B-BPF/m-SiN are promoted by the well-dispersed and well-adhered m-SiN in these novel polymer/ceramics composites. The results of grinding experiments indicate that the grinding wheels bound by the B-BPF/m-SiN have better grinding quality than those bound by the BPF. Thus the B-BPF/m-SiN composites are better binding media than the BPF resins

  11. Optical and microstructural investigations of porous silicon

    Raman scattering and photoluminescence (PL) measurements on (100) oriented -type crystalline silicon (-Si) and porous silicon (PS) samples were carried out. PS samples were prepared by anodic etching of -Si under the illumination of light for different etching times of 30, 60 and 90 min. Raman scattering from the ...

  12. Preparation and spectral properties of europium hydrogen squarate microcrystals

    Kolev, T.; Danchova, N.; Shandurkov, D.; Gutzov, S.

    2018-04-01

    A simple scheme for preparation of europium hydrogen squarate octahydrate microcrystals, Eu(HSq)3·8H2O is demonstrated. The microcrystalline powders obtained have a potential application as non-centrosymmetric and UV radiation - protective hybrid optical material. The site-symmetry of the Eu - ion is C2V or lower, obtained from diffuse reflectance spectra. The formation of europium hydrogen squarate is supported by IR - spectroscopy, UV-vis spectroscopy, chemical analysis and X-ray diffraction. A detailed analysis of the UV-vis and IR spectra of the micropowders prepared is presented. The reaction between europium oxide and squaric acid leads to formation of microcrystalline plate-like crystals of europium hydrogen squarate Eu(HSq)3·8H2O, a non-centrosymmetric hybrid optical material with a potential application as UV radiation - protective coatings.

  13. Water-Protein Hydrogen Exchange in the Micro-Crystalline Protein Crh as Observed by Solid State NMR Spectroscopy

    Boeckmann, Anja; Juy, Michel; Bettler, Emmanuel; Emsley, Lyndon; Galinier, Anne; Penin, Francois; Lesage, Anne

    2005-01-01

    We report site-resolved observation of hydrogen exchange in the micro-crystalline protein Crh. Our approach is based on the use of proton T 2 ' -selective 1 H- 13 C- 13 C correlation spectra for site-specific assignments of carbons nearby labile protein protons. We compare the proton T 2 ' selective scheme to frequency selective water observation in deuterated proteins, and discuss the impacts of deuteration on 13 C linewidths in Crh. We observe that in micro-crystalline proteins, solvent accessible hydroxyl and amino protons show comparable exchange rates with water protons as for proteins in solution, and that structural constraints, such as hydrogen bonding or solvent accessibility, more significantly reduce exchange rates

  14. Porous silicon nanoparticles for target drag delivery: structure and morphology

    Spivak, Yu M; Belorus, A O; Somov, P A; Bespalova, K A; Moshnikov, V A; Tulenin, S S

    2015-01-01

    Nanoparticles of porous silicon were obtained by electrochemical anodic etching. Morphology and structure of the particles was investigated by means dynamic light scattering and scanning electron microscopy. The influence of technological conditions of preparation on geometrical parameters of the porous silicon particles (particle size distribution, pore shape and size, the specific surface area of the porous silicon) is discussed. (paper)

  15. Scattering characteristics from porous silicon

    R. Sabet-Dariani

    2000-12-01

    Full Text Available   Porous silicon (PS layers come into existance as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet.   In this article, first, the optical properties of silicon and porous silicon are described. Then, previous research and the proposed models about reflection from PS and the origin of its photoluminescence are reveiwed. The reflecting and scattering, absorption and transmission of light from this material, are then investigated. These experiments include,different methods of PS sample preparation their photoluminescence, reflecting and scattering of light determining different characteristics with respect to Si bulk.

  16. Irradiation of electron with high energy induced micro-crystallization of amorphous silicon

    Zhong Yule; Huang Junkai; Liu Weiping; Li Jingna

    2001-01-01

    Amorphous silicon is amorphous alloy of Si-H. It is random network of silicon with some hydrogen. And its structure has many unstable bonds as weak bonds of Si-Si and distortion bonds of all kinds. The bonds was broken or was out of shape by light and electrical ageing. It induced increase of defective state that causes character of material going to bad. This drawback will be overcome after micro-crystallization of amorphous silicon. It was discovered that a-Si:H was micro-crystallized by irradiated of electrons with energy of 0.3-0.5 MeV, density of electronic beam of 1.3 x 10 19 cm -1 s -1 and irradiated time of 10-600 s. Size of grain is 10-20 nm. Thick of microcrystalline lager is 25-250 nm

  17. Substrate and p-layer effects on polymorphous silicon solar cells

    Abolmasov S.N.

    2014-07-01

    Full Text Available The influence of textured transparent conducting oxide (TCO substrate and p-layer on the performance of single-junction hydrogenated polymorphous silicon (pm-Si:H solar cells has been addressed. Comparative studies were performed using p-i-n devices with identical i/n-layers and back reflectors fabricated on textured Asahi U-type fluorine-doped SnO2, low-pressure chemical vapor deposited (LPCVD boron-doped ZnO and sputtered/etched aluminum-doped ZnO substrates. The p-layers were hydrogenated amorphous silicon carbon and microcrystalline silicon oxide. As expected, the type of TCO and p-layer both have a great influence on the initial conversion efficiency of the solar cells. However they have no effect on the defect density of the pm-Si:H absorber layer.

  18. Large-scale synthesis of double cauliflower-like Sb{sub 2}S{sub 3} microcrystallines by hydrothermal method

    Wu, Lei [Key Laboratory for Soft Chemistry and Functional Materials, Ministry of Education (China); Xu, Hanyue [School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Han, Qiaofeng, E-mail: hanqiaofeng@njust.edu.cn [Key Laboratory for Soft Chemistry and Functional Materials, Ministry of Education (China); Wang, Xin [Key Laboratory for Soft Chemistry and Functional Materials, Ministry of Education (China)

    2013-09-25

    Highlights: •Highly uniform double cauliflower-like Sb{sub 2}S{sub 3} particles were synthesized via hydrothermal method. •Influence of reaction conditions on the morphology of the products was discussed. •Double cauliflower-like Sb{sub 2}S{sub 3} superstructures revealed broad spectrum response. -- Abstract: The double cauliflower-like Sb{sub 2}S{sub 3} superstructures assembled by nanorods were prepared using SbCl{sub 3} and Na{sub 2}S⋅9H{sub 2}O as raw materials, dodecyltrimethylammonium bromide (DTAB, C{sub 15}H{sub 31}BrN) as surfactant under acidic condition at 180 °C for 30 h. The structure, morphology and composition of the product were characterized by X-ray diffraction pattern (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and energy diffraction spectroscopy (EDS). The effect of reaction conditions including temperature, reaction time and surfactants on the sample morphology was discussed and a possible mechanism for the formation of cauliflower-like Sb{sub 2}S{sub 3} was proposed. The cauliflower-like Sb{sub 2}S{sub 3} microcrystallines revealed broad spectrum response, which may have a good application prospect in solar energy utilization and photoelectric conversion fields.

  19. Use of the microcrystalline limestone as building material: the "GrisPulpis"case

    García del Cura, M. A.

    2005-03-01

    Full Text Available Gris Pulpis is a Jurassic microcrystalline limestone found in the Maestrazgo Area of the Iberian Mountain Range (province of Castellón, Spain. This paper reports the results of a detailed study of the mineralogical, pelrographic and chromatic characteristics, as well as the durability, of this stone, classified as a commercial marble for its polish ability. The study determined the relationship between the structural characteristics of the stone, with a proliferation of stylolites and veins, and its physical properties. Its flexura I strength was found to be greater than would normally be expected in a structure with such a dense web of stylolites and veins. This is due to the structural and mineralogical properties of these stylolites, characterised by an extremely wavy design, scant mineral infillings and, occasionally, subsequent cementation. The characteristics of the porous media of homogeneous microcrystalline limestones such as Gris Pulpis largely explain the durability of this stone when exposed to freeze-thaw cycles and salt crystallisation. These arc the properties that make Gris Pulpis limestone, quarried in the Spanish Region of Valencia, a valuable building material for both architectural and civil engineering applications

    En este trabajo se analizan las propiedades físicas y la durabilidad de una caliza microcristalina.El Gris Pulpis es una caliza microcristalina del Jurásico de la Cordillera Ibérica (Maestrazgo, cuyas características mineralógicas, petrográficas, cromáticas y alterabilidad se determinan detalladamente. Su aptitud para el pulido hace que sea un mármol comercial. Se establece la influencia de sus características estructurales (estilolitos, vénulas... en sus propiedades físicas. Su resistencia a flexión supera los valores que cabría esperar en función de la estructura de esta roca que, a veces, presenta abundantes estilolitos y vénulas. Esto es debido a las características estructurales y

  20. Silicon Qubits

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  1. Preparation and characterization of a calcium-phosphate-silicon coating on a Mg-Zn-Ca alloy via two-step micro-arc oxidation.

    Dou, Jinhe; Chen, Yang; Chi, Yiming; Li, Huancai; Gu, Guochao; Chen, Chuanzhong

    2017-06-14

    Magnesium alloys are the most promising implant materials due to their excellent biodegradability. However, their high degradation rate limits their practical application. In this study, we produced a calcium-phosphate (Ca-P) coating and a calcium-phosphate-silicon (Ca-P-Si) coating via one-step and two-step micro-arc oxidation processes, respectively. The microstructure and chemical composition of the MAO coatings were characterized using SEM, XRD and EDS. The degradation behaviors of the MAO coatings and the substrate were investigated using electrochemical techniques and immersion tests in simulated body fluid (SBF). The results show that the silicate was successfully incorporated into the Ca-P coating in the second MAO step, and this also increased the thickness of the coating. The Ca-P-Si coatings remarkably reduced the corrosion rate of the Mg alloy and Ca-P coating during 18 days of immersion in SBF. In addition, the bone-like apatite layer on the sample surface demonstrated the good biomineralization ability of the Ca-P-Si coating. Potentiodynamic polarization results showed that the MAO coating could clearly enhance the corrosion resistance of the Mg alloy. Moreover, we propose the growth mechanism of the MAO coating in the second step.

  2. Impact of hydrogen dilution on optical properties of intrinsic hydrogenated amorphous silicon films prepared by high density plasma chemical vapor deposition for solar cell applications

    Chen, Huai-Yi; Lee, Yao-Jen; Chang, Chien-Pin; Koo, Horng-Show; Lai, Chiung-Hui

    2013-01-01

    P-i-n single-junction hydrogenated amorphous silicon (a-Si:H) thin film solar cells were successfully fabricated in this study on a glass substrate by high density plasma chemical vapor deposition (HDP-CVD) at low power of 50 W, low temperature of 200°C and various hydrogen dilution ratios (R). The open circuit voltage (Voc ), short circuit current density (Jsc ), fill factor (FF) and conversion efficiency (η) of the solar cell as well as the refractive index (n) and absorption coefficient (α) of the i-layer at 600 nm wavelength rise with increasing R until an abrupt drop at high hydrogen dilution, i.e. R > 0.95. However, the optical energy bandgap (Eg ) of the i-layer decreases with the R increase. Voc and α are inversely correlated with Eg . The hydrogen content affects the i-layer and p/i interface quality of the a-Si:H thin film solar cell with an optimal value of R = 0.95, which corresponds to solar cell conversion efficiency of 3.85%. The proposed a-Si:H thin film solar cell is expected to be improved in performance.

  3. Preparation and characterization of hybrid materials of epoxy resin type bisphenol a with silicon and titanium oxides by sol-gel process

    Carrillo C, A.; Osuna A, J. G., E-mail: acc.carrillo@gmail.com [Universidad Autonoma de Coahuila, Facultad de Ciencias Quimicas, Blvd. Venustiano Carranza y Jose Cardenas Valdes, 25000 Saltillo, Coahuila (Mexico)

    2011-07-01

    Hybrid materials were synthesized from epoxy resins as a result bisphenol type A-silicon oxide and epoxy resin bisphenol type A-titanium oxide were obtained. The synthesis was done by sol-gel process using tetraethyl orthosilicate (Teos) and titanium isopropoxide (I Ti) as inorganic precursors. The molar ratio of bisphenol A to the inorganic precursors was the studied variable. The materials were characterized by thermal analysis, infrared spectroscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. The hybrid nature of the materials was demonstrated through thermal analysis and infrared spectroscopy. In both systems, as the amount of alkoxide increased, the bands described above were more defined. This behavior indicates the interactions between the resin and the alkoxides. Hybrids with Teos showed a smoother and homogeneous surface in its entirety, without irregularities. Hybrids with titanium isopropoxide had low roughness. Both Teos and I Ti hybrids showed a decrease on the atomic weight percentage of carbon due to a slight reduction of the organic part on the surface. (Author)

  4. Preparation and characterization of hybrid materials of epoxy resin type bisphenol a with silicon and titanium oxides by sol-gel process

    Carrillo C, A.; Osuna A, J. G.

    2011-01-01

    Hybrid materials were synthesized from epoxy resins as a result bisphenol type A-silicon oxide and epoxy resin bisphenol type A-titanium oxide were obtained. The synthesis was done by sol-gel process using tetraethyl orthosilicate (Teos) and titanium isopropoxide (I Ti) as inorganic precursors. The molar ratio of bisphenol A to the inorganic precursors was the studied variable. The materials were characterized by thermal analysis, infrared spectroscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. The hybrid nature of the materials was demonstrated through thermal analysis and infrared spectroscopy. In both systems, as the amount of alkoxide increased, the bands described above were more defined. This behavior indicates the interactions between the resin and the alkoxides. Hybrids with Teos showed a smoother and homogeneous surface in its entirety, without irregularities. Hybrids with titanium isopropoxide had low roughness. Both Teos and I Ti hybrids showed a decrease on the atomic weight percentage of carbon due to a slight reduction of the organic part on the surface. (Author)

  5. Effect of the hydrogen flow rate on the structural and optical properties of hydrogenated amorphous silicon thin films prepared by plasma enhanced chemical vapor deposition

    Ben Amor, Sana; Dimassi, Wissem; Ali Tebai, Mohamed; Ezzaouia, Hatem [Photovoltaic Laboratory Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia)

    2012-10-15

    Hydrogenated amorphous silicon (a-Si:H) thin films were deposited from pure silane (SiH{sub 4}) and hydrogen (H{sub 2}) gas mixture by plasma enhanced chemical vapor deposition (PECVD) method at low temperature (400 C) using high rf power (60 W). The structural and optical properties of these films are systematically investigated as a function of the flow rate of hydrogen (F{sub H2}).The surface morphology is analyzed by atomic force microscopy (AFM). The characterization of these films with low angle X-ray diffraction revealed that the crystallite size in the films tends to decrease with increase in (F{sub H2}). The Fourier transform infrared (FTIR) spectroscopic analysis showed that at low values of (F{sub H2}),the hydrogen bonding in Si:H films shifts from di-hydrogen (Si-H{sub 2}) and (Si-H{sub 2})n complexes to the mono-hydrogen (Si-H) bonding configuration. Finally, for these optimized conditions, the deposition rate decreases with increasing (F{sub H2}). (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Photovoltaic characterization of graphene/silicon Schottky junctions from local and macroscopic perspectives

    Hájková, Zdeňka; Ledinský, Martin; Vetushka, Aliaksi; Stuchlík, Jiří; Müller, Martin; Fejfar, Antonín; Bouša, Milan; Kalbáč, Martin; Frank, Otakar

    2017-01-01

    Roč. 676, May (2017), s. 82-88 ISSN 0009-2614 R&D Projects: GA ČR GA14-15357S Institutional support: RVO:68378271 ; RVO:61388955 Keywords : CVD graphene * microcrystalline silicon * solar cells * Schottky junctions * current-voltage curves * C-AFM Subject RIV: BM - Solid Matter Physics ; Magnetism; CG - Electrochemistry (UFCH-W) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) (UFCH-W) Impact factor: 1.815, year: 2016

  7. Preparation of anodic aluminum oxide (AAO) nano-template on silicon and its application to one-dimensional copper nano-pillar array formation

    Shen, Lan; Ali, Mubarak; Gu, Zhengbin; Min, Bonggi; Kim, Dongwook; Park, Chinho

    2013-01-01

    Anodized aluminum oxide (AAO) nanotemplates were prepared using the Al/Si substrates with an aluminum layer thickness of about 300 nm. A two-step anodization process was used to prepare an ordered porous alumina nanotemplate, and the pores of various sizes and depths were constructed electrochemically through anodic oxidation. The optimum morphological structure for large area application was constructed by adjusting the applied potential, temperature, time, and electrolyte concentration. SEM investigations showed that hexagonal-close-packed alumina nano-pore arrays were nicely constructed on Si substrate, having smooth wall morphologies and well-defined diameters. It is also reported that one dimensional copper nanopillars can be fabricated using the tunable nanopore sized AAO/Si template, by controlling the copper deposition process

  8. Effect of the conditions of preparation on the properties of a cellulose exchanger containing salicylic acid as a functional group

    Lieser, K H; Foerster, M; Burba, P [Technische Hochschule Darmstadt (Germany, F.R.). Fachbereich Anorganische Chemie und Kernchemie

    1977-04-01

    The preparation of a cellulose derivative containing salicylic acid as functional group was varied in order to find optimal conditions with respect to fast exchange as well as high capacity. Two kinds of cellulose (cross-linked and microcrystalline) and different reaction times were used. The properties of the products were investigated by titration curves to determine the capacity and by measuring the non-isotopic exchange Na/sup +//*Fe/sup 3 +/ and the isotopic exchange *Fe/sup 3 +//Fe/sup 3 +/ as a function of time. Microcrystalline cellulose and a reaction time of 15 min gave optimal results.

  9. Evaluation of several microcrystalline celluloses obtained from agricultural by-products

    John Rojas

    2011-01-01

    Full Text Available Microcrystalline cellulose (MCCI has been widely used as an excipient for direct compression due to its good flowability, compressibility, and compactibility. In this study, MCCI was obtained from agricultural by-products, such as corn cob, sugar cane bagasse, rice husk, and cotton by pursuing acid hydrolysis, neutralization, clarification, and drying steps. Further, infrared spectroscopy (IR, X-ray diffraction (XRD, optical microscopy, degree of polymerization (DP, and powder and tableting properties were evaluated and compared to those of Avicel PH101, Avicel PH102, and Avicel PH200. Except for the commercial products, all materials showed a DP from 55 to 97. Particles of commercial products and corn cob had an irregular shape, whereas bagasse particles were elongated and thick. Rice and cotton particles exhibited a flake-like and fiber-like shape, respectively. MCCI as obtained from rice husk and cotton was the most densified material, while that produced from corn cob and bagasse was bulky, porous, and more compressible. All products had a moisture content of less than 10% and yields from 7.4% to 60.4%. MCCI as obtained from bagasse was the most porous and compressible material among all materials. This product also showed the best tableting properties along with Avicel products. Likewise, all MCCI products obtained from the above-mentioned sources showed a more rapid disintegration time than that of Avicel products. These materials can be used as a potential source of MCCI in the production of solid dosage forms.

  10. The Disintegration Process in Microcrystalline Cellulose Based Tablets, Part 1: Influence of Temperature, Porosity and Superdisintegrants

    Yassin, Samy; Goodwin, Daniel J; Anderson, Andrew; Sibik, Juraj; Wilson, D Ian; Gladden, Lynn F; Zeitler, J Axel

    2015-01-01

    Disintegration performance was measured by analysing both water ingress and tablet swelling of pure microcrystalline cellulose (MCC) and in mixture with croscarmellose sodium using terahertz pulsed imaging (TPI). Tablets made from pure MCC with porosities of 10% and 15% showed similar swelling and transport kinetics: within the first 15 s, tablets had swollen by up to 33% of their original thickness and water had fully penetrated the tablet following Darcy flow kinetics. In contrast, MCC tablets with a porosity of 5% exhibited much slower transport kinetics, with swelling to only 17% of their original thickness and full water penetration reached after 100 s, dominated by case II transport kinetics. The effect of adding superdisintegrant to the formulation and varying the temperature of the dissolution medium between 20°C and 37°C on the swelling and transport process was quantified. We have demonstrated that TPI can be used to non-invasively analyse the complex disintegration kinetics of formulations that take place on timescales of seconds and is a promising tool to better understand the effect of dosage form microstructure on its performance. By relating immediate-release formulations to mathematical models used to describe controlled release formulations, it becomes possible to use this data for formulation design. © 2015 The Authors. Journal of Pharmaceutical Sciences published by Wiley Periodicals, Inc. and the American Pharmacists Association J Pharm Sci 104:3440–3450, 2015 PMID:26073446

  11. A study of a co-processed dry binder composed of microcrystalline cellulose and glycerol monostearate.

    Mužíková, Jitka; Muchová, Sandra

    2012-10-01

    The paper studies the co-processed dry binder LubriToseTM MCC from the viewpoint of energy evaluation of the compression process, strength and disintegration time of tablets. The results were compared with the identical evaluation of physical mixtures of microcrystalline cellulose with several types of lubricants. LubriTose MCC showed the lowest value of energy for friction, the highest value of energy accumulated by the tablet, and the highest plasticity of all tableting materials under study. There were no marked differences in the values of the energy of decompression. The tensile strength of tablets from LubriTose MCC was lower than in those from the mixture of Vivapur® 12 and glycerol monostearate, in the compression forces of 4 and 5 kN it was comparable with the tensile strength of tablets from Vivapur 12 with Poloxamer 407. Disintegration time of tablets from LubriTose MCC was shorter than that of those from Vivapur 12 with glycerol monostearate at the compression force of 3 kN, in the case of the compression forces of 4 and 5 kN no statistically significant difference was found between the values of these tableting materials.

  12. CVD of alternated microcrystalline (MCD) and nanocrystalline (NCD) diamond films on WC-TIC-CO substrates

    Campos, Raonei Alves; Contin, Andre; Trava-Airoldi, Vladimir J.; Corat, Evaldo Jose; Barquete, Danilo Maciel

    2010-01-01

    CVD Diamond coating of WC-TiC-Co cutting tools has been an alternative to increase tool lifetime. Experiments have shown that residual stresses produced during films growth on WC-TiC-Co substrates significantly increases with increasing film thickness up to 20 μm and usually leads to film delamination. In this work alternated micro- and nanocrystalline CVD diamond films have been used to relax interface stresses and to increase diamond coatings performance. WC-TiC-Co substrates have been submitted to a boronizing thermal diffusion treatment prior to CVD diamond films growth. After reactive heat treatment samples were submitted to chemical etching in acid and alkaline solution. The diamond films deposition was performed using HFCVD reactor with different gas concentrations for microcrystalline (MCD) and nano-crystalline (NCD) films growth. As a result, we present the improvement of diamond films adherence on WC-TiC-Co, evaluated by indentation and machining tests. Samples were characterized by Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray (EDX) for qualitative analysis of diamond films. X-ray Diffraction (XRD) was used for phases identification after boronizing process. Diamond film compressive residual stresses were analyzed by Raman Scattering Spectroscopy (RSS). (author)

  13. The Disintegration Process in Microcrystalline Cellulose Based Tablets, Part 1: Influence of Temperature, Porosity and Superdisintegrants.

    Yassin, Samy; Goodwin, Daniel J; Anderson, Andrew; Sibik, Juraj; Wilson, D Ian; Gladden, Lynn F; Zeitler, J Axel

    2015-10-01

    Disintegration performance was measured by analysing both water ingress and tablet swelling of pure microcrystalline cellulose (MCC) and in mixture with croscarmellose sodium using terahertz pulsed imaging (TPI). Tablets made from pure MCC with porosities of 10% and 15% showed similar swelling and transport kinetics: within the first 15 s, tablets had swollen by up to 33% of their original thickness and water had fully penetrated the tablet following Darcy flow kinetics. In contrast, MCC tablets with a porosity of 5% exhibited much slower transport kinetics, with swelling to only 17% of their original thickness and full water penetration reached after 100 s, dominated by case II transport kinetics. The effect of adding superdisintegrant to the formulation and varying the temperature of the dissolution medium between 20°C and 37°C on the swelling and transport process was quantified. We have demonstrated that TPI can be used to non-invasively analyse the complex disintegration kinetics of formulations that take place on timescales of seconds and is a promising tool to better understand the effect of dosage form microstructure on its performance. By relating immediate-release formulations to mathematical models used to describe controlled release formulations, it becomes possible to use this data for formulation design. © 2015 The Authors. Journal of Pharmaceutical Sciences published by Wiley Periodicals, Inc. and the American Pharmacists Association J Pharm Sci 104:3440-3450, 2015. © 2015 The Authors. Journal of Pharmaceutical Sciences published by Wiley Periodicals, Inc. and the American Pharmacists Association.

  14. An in situ Raman study of the intercalation of supercapacitor-type electrolyte into microcrystalline graphite

    Hardwick, Laurence J.; Hahn, Matthias; Ruch, Patrick; Holzapfel, Michael; Scheifele, Werner; Buqa, Hilmi; Krumeich, Frank; Novak, Petr; Koetz, Ruediger

    2006-01-01

    An initial Raman study on the effects of intercalation for aprotic electrolyte-based electrochemical double-layer capacitors (EDLCs) is reported. In situ Raman microscopy is employed in the study of the electrochemical intercalation of tetraethylammonium (Et 4 N + ) and tetrafluoroborate (BF 4 - ) into and out of microcrystalline graphite. During cyclic voltammetry experiments, the insertion of Et 4 N + into graphite for the negative electrode occurs at an onset potential of +1.0 V versus Li/Li + . For the positive electrode, BF 4 - was shown to intercalate above +4.3 V versus Li/Li + . The characteristic G-band doublet peak (E 2g2 (i) (1578 cm -1 ) and E 2g2 (b) (1600 cm -1 )) showed that various staged compounds were formed in both cases and the return of the single G-band (1578 cm -1 ) demonstrates that intercalation was fully reversible. The disappearance of the D-band (1329 cm -1 ) in intercalated graphite is also noted and when the intercalant is removed a more intense D-band reappears, indicating possible lattice damage. For cation intercalation, such irreversible changes of the graphite structure are confirmed by scanning electron microscopy (SEM)

  15. To Evaluate the Effect of Solvents and Different Relative Humidity Conditions on Thermal and Rheological Properties of Microcrystalline Cellulose 101 Using METHOCEL™ E15LV as a Binder.

    Jagia, Moksh; Trivedi, Maitri; Dave, Rutesh H

    2016-08-01

    The solvent used for preparing the binder solution in wet granulation can affect the granulation end point and also impact the thermal, rheological, and flow properties of the granules. The present study investigates the effect of solvents and percentage relative humidity (RH) on the granules of microcrystalline cellulose (MCC) with hydroxypropyl methyl cellulose (HPMC) as the binder. MCC was granulated using 2.5% w/w binder solution in water and ethanol/water mixture (80:20 v/v). Prepared granules were dried until constant percentage loss on drying, sieved, and further analyzed. Dried granules were exposed to different percentage RH for 48 h at room temperature. Powder rheometer was used for the rheological and flow characterization, while thermal effusivity and differential scanning calorimeter were used for thermal analysis. The thermal effusivity values for the wet granules showed a sharp increase beginning 50% w/w binder solution in both cases, which reflected the over-wetting of granules. Ethanol/water solvent batches showed greater resistance to flow as compared to the water solvent batches in the wet granule stage, while the reverse was true for the dried granule stage, as evident from the basic flowability energy values. Although the solvents used affected the equilibration kinetics of moisture content, the RH-exposed granules remained unaffected in their flow properties in both cases. This study indicates that the solvents play a vital role on the rheology and flow properties of MCC granules, while the different RH conditions have little or no effect on them for the above combination of solvent and binder.

  16. Electrical transport in transverse direction through silicon carbon alloy multilayers containing regular size silicon quantum dots

    Mandal, Aparajita [Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India); Kole, Arindam, E-mail: erak@iacs.res.in [Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India); Dasgupta, Arup [Microscopy and Thermophysical Property Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Chaudhuri, Partha [Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

    2016-11-30

    Highlights: • Low temperature columnar growth of regular sized Si-quantum dots (Si-QDs) within a-SiC:H/μc-SiC:H multilayer structure by tuning the a-SiC:H layer thickness. • Thickness optimization of the a-SiC:H layers resulted in a sharp increase of the transverse current and a decrease of the trap concentrations. • The arrangements of the Si-QDs favor percolation paths for the transverse current. - Abstract: Electrical transport in the transverse direction has been studied through a series of hydrogenated silicon carbon alloy multilayers (SiC-MLs) deposited by plasma enhanced chemical vapor deposition method. Each SiC-ML consists of 30 cycles of the alternating layers of a nearly amorphous silicon carbide (a-SiC:H) and a microcrystalline silicon carbide (μc-SiC:H) that contains high density of silicon quantum dots (Si-QDs). A detailed investigation by cross sectional TEM reveals preferential growth of densely packed Si-QDs of regular sizes ∼4.8 nm in diameter in a vertically aligned columnar structure within the SiC-ML. More than six orders of magnitude increase in transverse current through the SiC-ML structure were observed for decrease in the a-SiC:H layer thickness from 13 nm to 2 nm. The electrical transport mechanism was established to be a combination of grain boundary or band tail hopping and Frenkel–Poole (F-P) type conduction depending on the temperature and externally applied voltage ranges. Evaluation of trap concentration within the multilayer structures from the fitted room temperature current voltage characteristics by F-P function shows reduction up-to two orders of magnitude indicating an improvement in the short range order in the a-SiC:H matrix for decrease in the thickness of a-SiC:H layer.

  17. Conductivity percolation in loosely compacted microcrystalline cellulose: An in situ study by dielectric spectroscopy during densification.

    Nilsson, Martin; Frenning, Göran; Gråsjö, Johan; Alderborn, Göran; Strømme, Maria

    2006-10-19

    The present study aims at contributing to a complete understanding of the water-induced ionic charge transport in cellulose. The behavior of this transport in loosely compacted microcrystalline cellulose (MCC) powder was investigated as a function of density utilizing a new type of measurement setup, allowing for dielectric spectroscopy measurement in situ during compaction. The ionic conductivity in MCC was found to increase with increasing density until a leveling-out was observed for densities above approximately 0.7 g/cm3. Further, it was shown that the ionic conductivity vs density followed a percolation type behavior signifying the percolation of conductive paths in a 3D conducting network. The density percolation threshold was found to be between approximately 0.2 and 0.4 g/cm3, depending strongly on the cellulose moisture content. The observed percolation behavior was attributed to the forming of interparticulate bonds in the MCC and the percolation threshold dependence on moisture was linked to the moisture dependence of particle rearrangement and plastic deformation in MCC during compaction. The obtained results add to the understanding of the density-dependent water-induced ionic transport in cellulose showing that, at given moisture content, the two major parameters determining the magnitude of the conductivity are the connectedness of the interparticluate bonds and the connectedness of pores with a diameter in the 5-20 nm size range. At densities between approximately 0.7 and 1.2 g/cm3 both the bond and the pore networks have percolated, facilitating charge transport through the MCC compact.

  18. Adsorption mechanism of microcrystalline cellulose as green adsorbent for the removal of cationic methylene blue dye

    Tan, K.B.; Salamatinia, B.

    2016-01-01

    The adsorption mechanism of pure cellulose is yet to be explored. Thus, in this study, the adsorption mechanism of Microcrystalline Cellulose (MCC), a polysaccharide which is renewable, low cost and non-toxic, was studied on the adsorption of model dye Methylene blue (MB). It was found that the main adsorption mechanism of MB on MCC was due to the electrostatic attraction between the positively charged MB dye and negatively charged MCC. Thus, physical adsorption was the dominant effect, since electrostatic attraction is categorized as physical adsorption. This was verified by Dubinin-Radushkevich isotherm, whereby mean free energy adsorption value was found to be less than 8 kJ/mol. The values of Gibbs free energy for thermodynamics studies were found to be within the range of -20 kJ/mol and 0 kJ/mol, which also indicated physical adsorption. It was due to the electrostatic attraction as adsorption mechanism of this adsorption process which resulted rapid adsorption of MB dye. It was found that equilibrium dye concentration was achieved between 1-3 minutes, depending on the adsorption temperature. The rapid adsorption, as compared to a lot of materials, showed the potential of MCC as the future of green adsorbent. The adsorption of Methylene Blue on MCC fitted well in Langmuir Isotherm, with R2 values of higher than 0.99, while fitted moderately in Freundlich Isotherm, with R2 values between 0.9224 and 0.9223. Comparatively, the adsorption of MB on MCC fitted best Langmuir Isotherm as compared to Freundlich Isotherm which monolayer adsorption occurred at the homogenous surface of MCC. This also indicated adsorbed MB molecules do not interact with each other at neighboring adsorption sites. The maximum adsorption capacity calculated from Langmuir Isotherm was found to be 4.95 mg/g. Despite the potential of MCC as green adsorbent, the challenge of low adsorption capacity has to be addressed in the future. (author)

  19. Preparation and evaluation of Vinpocetine self-emulsifying pH gradient release pellets.

    Liu, Mengqi; Zhang, Shiming; Cui, Shuxia; Chen, Fen; Jia, Lianqun; Wang, Shu; Gai, Xiumei; Li, Pingfei; Yang, Feifei; Pan, Weisan; Yang, Xinggang

    2017-11-01

    The main objective of this study was to develop a pH gradient release pellet with self-emulsifying drug delivery system (SEDDS), which could not only improve the oral bioavailability of Vinpocetine (VIN), a poor soluble drug, but reduce the fluctuation of plasma concentration. First, the liquid VIN SEDDS formulation was prepared. Then the self-emulsifying pH gradient release pellets were prepared by extrusion spheronization technique, and formulation consisted by the liquid SEDDS, absorbent (colloidal silicon dioxide), penetration enhancer (sodium chloride), microcrystalline cellulose, ethyl alcohol, and three coating materials (HPMC, Eudragit L30D55, Eudragit FS30D) were eventually selected. Three kinds of coated pellets were mixed in capsules with the mass ratio of 1:1:1. The release curves of capsules were investigated in vitro under the simulated gastrointestinal conditions. In addition, the oral bioavailability and pharmacokinetics of VIN self-emulsifying pH gradient release pellets, commercial tablets and liquid VIN SEDDS were evaluated in Beagle dogs. The oral bioavailability of self-emulsifying pH gradient release pellets was about 149.8% of commercial VIN tablets, and it was about 86% of liquid VIN SEDDS, but there were no significant difference between liquid SEDDS and self-emulsifying pH gradient release pellets. In conclusion, the self-emulsifying pH gradient release pellets could significantly enhance the absorption of VIN and effectively achieve a pH gradient release. And the self-emulsifying pH gradient release pellet was a promising method to improve bioavailability of insoluble drugs.

  20. Porous silicon: Synthesis and optical properties

    Naddaf, M.; Awad, F.

    2006-01-01

    Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

  1. Porous silicon: Synthesis and optical properties

    Naddaf, M.; Awad, F.

    2006-06-01

    Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

  2. The role of plasma induced substrate heating during high rate deposition of microcrystalline solar cells

    van den Donker, M.N.; Schmitz, R.; Appenzeller, W.; Rech, B.; Kessels, W.M.M.; Sanden, van de M.C.M.

    2006-01-01

    A 13.56 MHz parallel plate hydrogen-dild. silane plasma, operated at high pressure and high power, was used to deposit microcryst. silicon solar cells with efficiencies of 6-9% at high deposition rates of 0.4-1.2 nm/s. In this regime new challenges arise regarding temp. control, since the high

  3. The effect of pulping concentration treatment on the properties of microcrystalline cellulose powder obtained from waste paper.

    Okwonna, Okumneme O

    2013-10-15

    Microcrystalline cellulose (MCC) powder was isolated from three grades of waste paper: book, Groundwood/Newsprint and paperboard, through the processes of pulping and hydrolysis. Pulping treatment on these grades of waste paper was done using varying concentrations of caustic soda. Effects of the concentration of the pulping medium on the thermal and kinetic properties were investigated. Also determined were the effects of this on the physico-chemical properties. The chemical structure was characterized using an infrared spectroscopy (FTIR). Results showed these properties to be affected by the concentration of the pulping medium. Copyright © 2013 Elsevier Ltd. All rights reserved.

  4. Influence of ambient moisture on the compaction behavior of microcrystalline cellulose powder undergoing uni-axial compression and roller-compaction: a comparative study using near-infrared spectroscopy.

    Gupta, Abhay; Peck, Garnet E; Miller, Ronald W; Morris, Kenneth R

    2005-10-01

    This study evaluates the effect of variation in the ambient moisture on the compaction behavior of microcrystalline cellulose (MCC) powder. The study was conducted by comparing the physico-mechanical properties of, and the near infrared (NIR) spectra collected on, compacts prepared by roller compaction with those collected on simulated ribbons, that is, compacts prepared under uni-axial compression. Relative density, moisture content, tensile strength (TS), and Young modulus were used as key sample attributes for comparison. Samples prepared at constant roller compactor settings and feed mass showed constant density and a decrease in TS with increasing moisture content. Compacts prepared under uni-axial compression at constant pressure and compact mass showed the opposite effect, that is, density increased while TS remained almost constant with increasing moisture content. This suggests difference in the influence of moisture on the material under roller compaction, in which the roll gap (i.e., thickness and therefore density) remains almost constant, vs. under uni-axial compression, in which the thickness is free to change in response to the applied pressure. Key sample attributes were also related to the NIR spectra using multivariate data analysis by the partial least squares projection to latent structures (PLS). Good agreement was observed between the measured and the NIR-PLS predicted values for all key attributes for both, the roller compacted samples as well as the simulated ribbons. Copyright (c) 2005 Wiley-Liss, Inc. and the American Pharmacists Association

  5. Preconcentration of uranium, thorium, zirconium, titanium, molybdenum and vanadium with oxine supported on microcrystalline naphthalene and their determinations by ICP-AES

    Kumar, Naveen; Kumar, Sanjay; Kumar, Vijay; Nandakishore, S.S.; Bangroo, P.N.

    2013-01-01

    As an effective technique for separation and preconcentration of trace elements, solid-liquid extraction with microcrystalline naphthalene has received great attention in recent years. The application of the adsorption of the metal complexes on microcrystalline naphthalene has greatly enhanced the utility of solid-liquid extraction in trace analysis. A survey of the literature revealed that single element detection techniques such as spectrophotometry, atomic absorption spectrometry, and polarography were mostly combined with this separation method. However, multi-element simultaneous detection techniques, like ICP-AES and ICP-MS were seldom used as the detectors in this solid-liquid extraction method. The aim of this work was to attempt to adopt the reagent oxine for the separation and subsequent determination of U, Th, Zr, Ti, Mo and V by ICP-AES, after adsorption of their oxinate complexes on microcrystalline naphthalene

  6. Geochemistry of silicon isotopes

    Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

    2018-04-01

    Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

  7. In and Ga Codoped ZnO Film as a Front Electrode for Thin Film Silicon Solar Cells

    Duy Phong Pham

    2014-01-01

    Full Text Available Doped ZnO thin films have attracted much attention in the research community as front-contact transparent conducting electrodes in thin film silicon solar cells. The prerequisite in both low resistivity and high transmittance in visible and near-infrared region for hydrogenated microcrystalline or amorphous/microcrystalline tandem thin film silicon solar cells has promoted further improvements of this material. In this work, we propose the combination of major Ga and minor In impurities codoped in ZnO film (IGZO to improve the film optoelectronic properties. A wide range of Ga and In contents in sputtering targets was explored to find optimum optical and electrical properties of deposited films. The results show that an appropriate combination of In and Ga atoms in ZnO material, followed by in-air thermal annealing process, can enhance the crystallization, conductivity, and transmittance of IGZO thin films, which can be well used as front-contact electrodes in thin film silicon solar cells.

  8. AFM and FTIR characterization of microcrystalline Si obtained from isothermal annealing of Al/a-Si:H

    Rojas-Lopez, M.; Orduna-Diaz, A.; Delgado-Macuil, R. [Centro de Investigacion en Biotecnologia Aplicada (CIBA), IPN, Tlaxcala, Tlax. 72197 (Mexico); Olvera-Hernandez, J. [Centro de Investigacion en Dispositivos Semiconductores (CIDS), BUAP, Puebla, Pue. 72570 (Mexico); Navarro-Contreras, H.; Vidal, M.A.; Saucedo, N.; Mendez-Garcia, V.H. [Instituto de Investigacion en Comunicacion Optica (IICO), UASLP, San Luis Potosi, S.L.P. 78100 (Mexico)

    2007-04-15

    Atomic force microscopy and Fourier transform infrared spectroscopy were used to investigate the morphology of the microcrystalline surface, and also the amorphous-crystalline structural transformation of a-Si:H films, isothermally annealed during several hours. Crystallization process was strongly influenced by the deposition of an Al layer on the surface of a-Si:H samples. Representative AFM images show the presence of grains, which increase in diameter with the annealing time. Relative crystallized fraction as a function of the annealing time can be described adequately by using the Avrami equation. The kinetic of this crystallization process suggest a two-dimensional growth of the Si nuclei. Fourier transform infrared measurements show the presence of an intense band near 512 cm{sup -1} associated to Si-Si bonding. We observed the relative diminishing of the intensity of the Si-H wagging mode at 694 cm{sup -1} with annealing time, suggesting effusion of hydrogen to the surface of microcrystalline films. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. A study of a novel coprocessed dry binder composed of α-lactose monohydrate, microcrystalline cellulose and corn starch.

    Mužíková, Jitka; Srbová, Alena; Svačinová, Petra

    2017-12-01

    This paper deals with a study of the novel coprocessed dry binder Combilac®, which contains 70% of α-lactose monohydrate, 20% of microcrystalline cellulose and 10% of native corn starch. These tests include flow properties, compressibility, lubricant sensitivity, tensile strength and disintegration time of tablets. Compressibility is evaluated by means of the energy profile of compression process, test of stress relaxation and tablet strength. The above-mentioned parameters are also evaluated in the physical mixture of α-lactose monohydrate, microcrystalline cellulose and native corn starch and compared with Combilac. Combilac shows much better flowability than the physical mixture of the used dry binders. Its compressibility is better, tablets possess a higher tensile strength. Neither Combilac, nor the physical mixture can be compressed without lubricants due to high friction and sticking to the matrix. Combilac has a higher lubricant sensitivity than the physical mixture of the dry binders. Disintegration time of Combilac tablets is comparable with the disintegration time of tablets made from the physical mixture.

  10. Bioconversion of different sizes of microcrystalline cellulose pretreated by microwave irradiation with/without NaOH

    Peng, Huadong; Chen, Hongzhang; Qu, Yongshui; Li, Hongqiang; Xu, Jian

    2014-01-01

    Highlights: • High concentration of alkali or temperature was necessary in cellulose degradation. • Effects of alkali pretreatment could be enhanced with the addition of microwave irradiation. • The structures diversities of microcrystalline cellulose were eliminated in the fermentation. • The significance of particle size and treat condition varied with reaction time. - Abstract: The process of microwave irradiation (MWI) pretreatment on microcrystalline cellulose (MCC) with different sizes with/without NaOH was investigated on the variation of the ratio of degradated solid residue (R DS ), particle size, crystallinity index (CrI), crystallite size (Sc) and specific surface area (SSA). High concentration of alkali or high temperature was necessary in dissolving or decomposing the cellulose. Appropriate pretreatment severity eliminated the effects of structural diversities in feedstocks, which led to convergence in the ethanol fermentation. After the reaction proceeded to 120 h, the samples could be converted to glucose completely and the highest ethanol yield of the theoretical was 58.91% for all the samples pretreated by the combined treatment of MWI and NaOH. In addition, the statistical analysis implied that when reaction time got to 24 h, particle size and pretreatment condition affected much more significant than other factors

  11. Influence of alkaline hydrogen peroxide pre-hydrolysis on the isolation of microcrystalline cellulose from oil palm fronds.

    Owolabi, Abdulwahab F; Haafiz, M K Mohamad; Hossain, Md Sohrab; Hussin, M Hazwan; Fazita, M R Nurul

    2017-02-01

    In the present study, microcrystalline cellulose (MCC) was isolated from oil palm fronds (OPF) using chemo-mechanical process. Wherein, alkaline hydrogen peroxide (AHP) was utilized to extract OPF fibre at different AHP concentrations. The OPF pulp fibre was then bleached with acidified sodium chlorite solution followed by the acid hydrolysis using hydrochloric acid. Several analytical methods were conducted to determine the influence of AHP concentration on thermal properties, morphological properties, microscopic and crystalline behaviour of isolated MCC. Results showed that the MCC extracted from OPF fibres had fibre diameters of 7.55-9.11nm. X-ray diffraction (XRD) analyses revealed that the obtained microcrystalline fibre had both celluloses I and cellulose II polymorphs structure, depending on the AHP concentrations. The Fourier transmission infrared (FTIR) analyses showed that the AHP pre-hydrolysis was successfully removed hemicelluloses and lignin from the OPF fibre. The crystallinity of the MCC was increased with the AHP concentrations. The degradation temperature of MCC was about 300°C. The finding of the present study showed that pre-treatment process potentially influenced the quality of the isolation of MCC from oil palm fronds. Copyright © 2016 Elsevier B.V. All rights reserved.

  12. Photopolymerizable silicone monomers, oligomers, and resins

    Jacobine, A.F.; Nakos, S.T.

    1992-01-01

    The purpose of this chapter is to acquaint the general photopolymer researcher with the historical development of the chemistry and technology of photopolymerizable silicone monomers, fluids, and resins. The current status of research in these areas is assessed. The focus of this chapter is not only on the polymer chemistry and application of this technology, but also on important aspects of the synthetic chemistry involved in the preparation of UV-curable silicone monomers, oligomers, and resins. 236 refs., 6 tabs

  13. New techniques used to realize silicon photocells

    Siffert, P.

    1978-01-01

    The techniques used to realize the terrestrial silicon solar cells being considered the possible improvements of these methods are discussed. The various approaches under development to prepare silicon sheets in a continuous way are considered for both self-supporting or substrate deposited layers. Finally, the various methods used or under investigation to obtain the surface potential barrier are considered; MIS, heterojunction and ion implantation [fr

  14. Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells

    Jaran Sritharathikhun

    2014-01-01

    Full Text Available This paper reports the preparation of wide gap p-type hydrogenated microcrystalline silicon oxide (p-μc-SiO:H films using a 40 MHz very high frequency plasma enhanced chemical vapor deposition technique. The reported work focused on the effects of the CO2/SiH4 ratio on the properties of p-μc-SiO:H films and the effectiveness of the films as an emitter layer of crystalline silicon heterojunction (c-Si-HJ solar cells. A p-μc-SiO:H film with a wide optical band gap (E04, 2.1 eV, can be obtained by increasing the CO2/SiH4 ratio; however, the tradeoff between E04 and dark conductivity must be considered. The CO2/SiH4 ratio of the p-μc-SiO:H emitter layer also significantly affects the performance of the solar cells. Compared to the cell using p-μc-Si:H (CO2/SiH4 = 0, the cell with the p-μc-SiO:H emitter layer performs more efficiently. We have achieved the highest efficiency of 18.3% with an open-circuit voltage (Voc of 692 mV from the cell using the p-μc-SiO:H layer. The enhancement in the Voc and the efficiency of the solar cells verified the potential of the p-μc-SiO:H films for use as the emitter layer in c-Si-HJ solar cells.

  15. Evaluation of selected chemical processes for production of low-cost silicon phase 2. silicon material task, low-cost silicon solar array project

    Blocher, J. M., Jr.; Browning, M. F.; Rose, E. E.; Thompson, W. B.; Schmitt, W. A.; Fippin, J. S.; Kidd, R. W.; Liu, C. Y.; Kerbler, P. S.; Ackley, W. R.

    1978-01-01

    Progress from October 1, 1977, through December 31, 1977, is reported in the design of the 50 MT/year experimental facility for the preparation of high purity silicon by the zinc vapor reduction of silicon tetrachloride in a fluidized bed of seed particles to form a free flowing granular product.

  16. Recent Advances in Photoelectrochemical Applications of Silicon Materials for Solar-to-Chemicals Conversion.

    Zhang, Doudou; Shi, Jingying; Zi, Wei; Wang, Pengpeng; Liu, Shengzhong Frank

    2017-11-23

    Photoelectrochemical (PEC) technology for the conversion of solar energy into chemicals requires cost-effective photoelectrodes to efficiently and stably drive anodic and/or cathodic half-reactions to complete the overall reactions for storing solar energy in chemical bonds. The shared properties among semiconducting photoelectrodes and photovoltaic (PV) materials are light absorption, charge separation, and charge transfer. Earth-abundant silicon materials have been widely applied in the PV industry, and have demonstrated their efficiency as alternative photoabsorbers for photoelectrodes. Many efforts have been made to fabricate silicon photoelectrodes with enhanced performance, and significant progress has been achieved in recent years. Herein, recent developments in crystalline and thin-film silicon-based photoelectrodes (including amorphous, microcrystalline, and nanocrystalline silicon) immersed in aqueous solution for PEC hydrogen production from water splitting are summarized, as well as applications in PEC CO 2 reduction and PEC regeneration of discharged species in redox flow batteries. Silicon is an ideal material for the cost-effective production of solar chemicals through PEC methods. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. The influence of the electrical asymmetry effect on deposition uniformity of thin silicon film

    Hrunski, D., E-mail: Dzmitry.Hrunski@leyboldoptics.com; Janssen, A.; Fritz, T.; Hegemann, T.; Clark, C.; Schreiber, U.; Grabosch, G.

    2013-04-01

    The deposition of amorphous and microcrystalline silicon is an important step in the production of thin silicon film solar panels. Deposition rate, layer uniformity and material quality are key attributes for achieving high efficiency in such panels. Due to the multilayer structure of tandem solar cells (more than 6 thin silicon layers), it is becoming increasingly important to improve the uniformity of deposition without sacrificing deposition rate and material quality. This paper reports the results of an investigation into the influence of the electrical asymmetry effect (EAE) on the uniformity of deposited layers. 13.56 MHz + 27.12 MHz excitation frequencies were used for thin silicon film deposition in a Gen5 reactor (1100 × 1400 mm). To change the plasma properties, the DC self bias voltage on the RF electrode was varied by adjustment of the phase angle between the two frequencies applied. It was found that the layers deposited by EAE method have better uniformity than layers deposited in single frequency 27.12 MHz discharge. The EAE provides additional opportunities for improvement of uniformity, deposition rate and material quality. - Highlights: ► The electrical asymmetry effect technique tested for thin silicon film deposition ► Bias voltage has an influence on film uniformity. ► Minimized the deterioration of layer uniformity while increasing discharge frequency.

  18. Solar cells with gallium phosphide/silicon heterojunction

    Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

    2015-09-01

    One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

  19. Diagenetic Microcrystalline Opal Varieties from the Monterey Formation, CA: HRTEM Study of Structures and Phase Transformation Mechanisms

    Cady, Sherry L.; Wenk, H.-R.; DeVincenzi, Don (Technical Monitor)

    1994-01-01

    Microcrystalline opal varieties form as intermediary precipitates during the diagenetic transformation of biogenically precipitated non-crystalline opal (opal-A) to microquartz. With regard to the Monterey Formation of California, X-ray powder diffraction studies have shown that a decrease in the primary d-spacing of opal-CT toward that of cristobalite occurs with increasing diagenesis. The initial timing of opal-CT/quartz formation and the value of the primary opal-CT d-spacing, are influenced by the sediment. lithology. Transmission electron microscopy methods (CTEM/HRTEM) were used to investigate the structure of the diagenetic phases and establish transformation mechanisms between the varieties of microcrystalline opals in charts and porcelanites from the Monterey Formation. HRTEM images revealed that the most common fibrous varieties of microcrystalline opals contain varying amounts of structural disorder. Finite lamellar units of cristobalite-and tridymite-type. layer sequences were found to be randomly stacked in a direction perpendicular to the fiber axis. Disordered and ordered fibers were found to have coprecipitated within the same radial fiber bundles that formed within the matrix of the Most siliceous samples. HRTEM images, which reveal that the fibers within radial and lepispheric fiber bundles branch non-crystallographically, support an earlier proposal that microspheres in chert grow via a spherulitic growth mechanism. A less common variety of opal-CT was found to be characterized by non-parallel (low-angle) stacking sequences that often contain twinned lamellae. Tabular-shaped crystals of orthorhombic tridymite (PO-2) were also identified in the porcelanite samples. A shift in the primary d-spacing of opal-CT has been interpreted as an indication of solid-state ordering g toward a predominantly cristobalite structure, (opal-C). Domains of opal-C were identified as topotactically-oriented overgrowths on discrete Sections of opal-CT fibers and as

  20. Buried oxide layer in silicon

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  1. Nanostructured silicon ferromagnet collected by a permanent neodymium magnet.

    Okuno, Takahisa; Thürmer, Stephan; Kanoh, Hirofumi

    2017-11-30

    Nanostructured silicon (N-Si) was prepared by anodic electroetching of p-type silicon wafers. The obtained magnetic particles were separated by a permanent neodymium magnet as a magnetic nanostructured silicon (mN-Si). The N-Si and mN-Si exhibited different magnetic properties: the N-Si exhibited ferromagnetic-like behaviour, whereas the mN-Si exhibited superparamagnetic-like behaviour.

  2. Preliminary viability studies of fibroblastic cells cultured on microcrystalline and nanocrystalline diamonds produced by chemical vapour deposition method

    Ana Amélia Rodrigues

    2013-02-01

    Full Text Available Implant materials used in orthopedics surgery have demonstrated some disadvantages, such as metallic corrosion processes, generation of wear particles, inflammation reactions and bone reabsorption in the implant region. The diamond produced through hot-filament chemical vapour deposition method is a new potential biomedical material due to its chemical inertness, extreme hardness and low coefficient of friction. In the present study we analysis two samples: the microcrystalline diamond and the nanocrystalline diamond. The aim of this study was to evaluate the surface properties of the diamond samples by scanning electron microscopy, Raman spectroscopy and atomic force microscopy. Cell viability and morphology were assessed using thiazolyl blue tetrazolium bromide, cytochemical assay and scanning electron microscopy, respectively. The results revealed that the two samples did not interfere in the cell viability, however the proliferation of fibroblasts cells observed was comparatively higher with the nanocrystalline diamond.

  3. Wear resistance of nano- and micro-crystalline diamond coatings onto WC-Co with Cr/CrN interlayers

    Polini, Riccardo [Dipartimento di Scienze e Tecnologie Chimiche, Universita di Roma Tor Vergata, Via della Ricerca Scientifica, 1, Rome, 00133 (Italy); Barletta, Massimiliano, E-mail: barletta@ing.uniroma2.i [Dipartimento di Ingegneria Meccanica, Universita di Roma Tor Vergata, Via del Politecnico, 1, Rome, 00133 (Italy); Cristofanilli, Giacomo [Dipartimento di Scienze e Tecnologie Chimiche, Universita di Roma Tor Vergata, Via della Ricerca Scientifica, 1, Rome, 00133 (Italy)

    2010-12-30

    Cr/CrN bi-layers have been used recently to promote the growth of high quality Hot Filament Chemical Vapour Deposition (HFCVD) diamond coatings onto Co-cemented tungsten carbide (WC-6 wt.%Co) substrates. In the present investigation, the influence of the crystalline size of the diamond coatings on their wear endurance is looked into. Nano- (NDC) and micro-crystalline Diamond Coatings (MDC) were deposited by HFCVD onto untreated and Fluidized Bed (FB) treated Cr/CrN interlayers. NDCs, characterized by a cauliflower-like morphology, showed improved wear resistance. However, the superimposition of NDCs onto Cr/CrN interlayers micro-corrugated by FB treatment was found to be the most promising choice, leading to the formation of highly adherent and wear resistant coatings.

  4. Influence of nanometric silicon carbide on phenolic resin composites ...

    Abstract. This paper presents a preliminary study on obtaining and characterization of phenolic resin-based com- posites modified with nanometric silicon carbide. The nanocomposites were prepared by incorporating nanometric silicon carbide (nSiC) into phenolic resin at 0.5, 1 and 2 wt% contents using ultrasonication to ...

  5. Preparation of Silicone Oil Microcapsules with Bionic Antifouling Performance%硅油微胶囊的制备及其仿生防污性能的研究

    李玉; 汪国庆; 万逸; 丁春华; 王爱民

    2018-01-01

    以甲基硅油为芯材、脲醛树脂为壁材,通过细乳液聚合法制备脲醛树脂(PUF)/硅油微胶囊,探究了微胶囊的形成机理及乳化剂、搅拌速度对微胶囊的影响.通过光学显微镜(OM)、扫描电子显微镜(SEM)、热重分析(TGA)、红外光谱(FT-IR)等手段表征了微胶囊的形貌、热力学及价键结构等性能.结果表明:用细乳液聚合法成功制备了表面光滑、粒径分布均匀的微胶囊;微胶囊包覆率达到91%,且具有良好的缓释效果.将制得的微胶囊掺杂到丙烯酸锌树脂中制备防污涂层,研究了防污涂层的防污性能.采用SEM分析了防污涂层的形貌,并通过接触角测试及防污试验考察了防污涂层的疏水性及抑菌抑藻效果.结果表明:防污涂层表面形成类似荷叶表面的微纳米结构,涂层的疏水性增加,接触角由98.2°增加到123.9°;在抗藻抗菌类试验中显示出良好的防污性能.%Poly(urea-formaldehyde) (PUF) microcapsules loaded with silicone oil as core material were prepared by mini-emulsion method.The formation mechanism of microcapsules,the effects of the emulsifier and agitation speed on the characters of microcapsules were explored.The morphology,thermodynamic performance and valence bond structure of microcapsules were investigated by means of optical microscopy (OM),scanning electron microscopy (SEM),thermogravimetric analysis (TGA) and infrared spectroscopy (FT-IR),etc.The results showed that the microcapsules with smooth surface and uniform particle size distribution were successfully obtained by mini-emulsion method.The oil content reached 91% by measuring the TG-DTG curve,and the microcapsules showed a good slow-releasing performance.The prepared microcapsules as anti-fouling agents were embedded into the zinc acrylate resin and the anti-biofouling performance of the coating was studied.The morphology of antifouling coating was analyzed by SEM.The hydrophobicity and antifouling effect of

  6. A convenient way of manufacturing silicon nanotubes on a silicon substrate

    Zhang, Changchang; Cheng, Heming; Liu, Xiang, E-mail: liuxiang@ahut.edu.cn

    2016-07-01

    A convenient approach of preparing silicon nanotubes (SiNTs) on a silicon substrate is described in this work in detail. Firstly, a porous silicon (PSi) slice is prepared by a galvanic displacement reaction. Then it is put into aqueous solutions of 20% (w%) ammonium fluoride and 2.5 mM cobalt nitrate for a predetermined time. The cobalt ions are reduced and the resulted cobalt particles are deposited on the PSi slice. After the cobalt particles are removed with 5 M nitric acid a plenty of SiNTs come out and exhibit disorderly on the silicon substrate, which are illustrated by scanning electron microscopy (SEM). The compositions of the SiNTs are examined by energy-dispersive X-ray spectroscopy. Based on the SEM images, a suggested mechanism is put forward to explain the generation of the SiNTs on the PSi substrate. - Highlights: • A facile approach of preparing silicon nano tubes was invented. • The experimental results demonstrated the strong reducibility of Si-H{sub x} species. • It provided a new way of manufacturing silicon-contained hybrids.

  7. Amphiphilic silicone architectures via anaerobic thiol-ene chemistry.

    Keddie, Daniel J; Grande, John B; Gonzaga, Ferdinand; Brook, Michael A; Dargaville, Tim R

    2011-11-18

    Despite broad application, few silicone-based surfactants of known structure or, therefore, surfactancy have been prepared because of an absence of selective routes and instability of silicones to acid and base. Herein the synthesis of a library of explicit silicone-poly(ethylene glycol) (PEG) materials is reported. Pure silicone fragments were generated by the B(C(6)F(5))(3)-catalyzed condensation of alkoxysilanes and vinyl-functionalized hydrosilanes. The resulting pure products were coupled to thiol-terminated PEG materials using photogenerated radicals under anaerobic conditions.

  8. Porosity and thickness effect of porous silicon layer on photoluminescence spectra

    Husairi, F. S.; Eswar, K. A.; Guliling, Muliyadi; Khusaimi, Z.; Rusop, M.; Abdullah, S.

    2018-05-01

    The porous silicon nanostructures was prepared by electrochemical etching of p-type silicon wafer. Porous silicon prepared by using different current density and fix etching time with assistance of halogen lamp. The physical structure of porous silicon measured by the parameters used which know as experimental factor. In this work, we select one of those factors to correlate which optical properties of porous silicon. We investigated the surface morphology by using Surface Profiler (SP) and photoluminescence using Photoluminescence (PL) spectrometer. Different physical characteristics of porous silicon produced when current density varied. Surface profiler used to measure the thickness of porous and the porosity calculated using mass different of silicon. Photoluminescence characteristics of porous silicon depend on their morphology because the size and distribution of pore its self will effect to their exciton energy level. At J=30 mA/cm2 the shorter wavelength produced and it followed the trend of porosity with current density applied.

  9. 1366 Project Silicon: Reclaiming US Silicon PV Leadership

    Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

    2016-02-16

    1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

  10. Textural and chemical properties of zinc chloride activated carbons prepared from pistachio-nut shells

    Yang Ting; Lua, Aik Chong

    2006-01-01

    The effects of activation temperature on the textural and chemical properties of the activated carbons prepared from pistachio-nut shells using zinc chloride activation under both inert nitrogen gas atmosphere and vacuum condition were studied. Relatively low temperature of 400 deg. C was beneficial for the development of pore structures. Too high an activation temperature would lead to sintering of volatiles and shrinkage of the carbon structure. The microstructures and microcrystallinity of the activated carbons prepared were examined by scanning electron microscope and powder X-ray diffraction techniques, respectively, while Fourier transform infrared spectra determined the changes in the surface functional groups at the various stages of preparation

  11. Textural and chemical properties of zinc chloride activated carbons prepared from pistachio-nut shells

    Ting, Yang [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Lua, Aik Chong [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

    2006-12-10

    The effects of activation temperature on the textural and chemical properties of the activated carbons prepared from pistachio-nut shells using zinc chloride activation under both inert nitrogen gas atmosphere and vacuum condition were studied. Relatively low temperature of 400 deg. C was beneficial for the development of pore structures. Too high an activation temperature would lead to sintering of volatiles and shrinkage of the carbon structure. The microstructures and microcrystallinity of the activated carbons prepared were examined by scanning electron microscope and powder X-ray diffraction techniques, respectively, while Fourier transform infrared spectra determined the changes in the surface functional groups at the various stages of preparation.

  12. Nickel-induced crystallization of amorphous silicon

    Schmidt, J A; Arce, R D; Buitrago, R H [INTEC (CONICET-UNL), Gueemes 3450, S3000GLN Santa Fe (Argentina); Budini, N; Rinaldi, P, E-mail: jschmidt@intec.unl.edu.a [FIQ - UNL, Santiago del Estero 2829, S3000AOM Santa Fe (Argentina)

    2009-05-01

    The nickel-induced crystallization of hydrogenated amorphous silicon (a-Si:H) is used to obtain large grained polycrystalline silicon thin films on glass substrates. a-Si:H is deposited by plasma enhanced chemical vapour deposition at 200 deg. C, preparing intrinsic and slightly p-doped samples. Each sample was divided in several pieces, over which increasing Ni concentrations were sputtered. Two crystallization methods are compared, conventional furnace annealing (CFA) and rapid thermal annealing (RTA). The crystallization was followed by optical microscopy and scanning electron microscopy observations, X-ray diffraction, and reflectance measurements in the UV region. The large grain sizes obtained - larger than 100{mu}m for the samples crystallized by CFA - are very encouraging for the preparation of low-cost thin film polycrystalline silicon solar cells.

  13. Silicon: electrochemistry and luminescence

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  14. Release of low molecular weight silicones and platinum from silicone breast implants.

    Lykissa, E D; Kala, S V; Hurley, J B; Lebovitz, R M

    1997-12-01

    We have conducted a series of studies addressing the chemical composition of silicone gels from breast implants as well as the diffusion of low molecular weight silicones (LM-silicones) and heavy metals from intact implants into various surrounding media, namely, lipid-rich medium (soy oil), aqueous tissue culture medium (modified Dulbecco's medium, DMEM), or an emulsion consisting of DMEM plus 10% soy oil. LM-silicones in both implants and surrounding media were detected and quantitated using gas chromatography (GC) coupled with atomic emission (GC-AED) as well as mass spectrometric (GC/MS) detectors, which can detect silicones in the nanogram range. Platinum, a catalyst used in the preparation of silicone gels, was detected and quantitated using inductive argon-coupled plasma/mass spectrometry (ICP-MS), which can detect platinum in the parts per trillion range. Our results indicate that GC-detectable low molecular weight silicones contribute approximately 1-2% to the total gel mass and consist predominantly of cyclic and linear poly-(dimethylsiloxanes) ranging from 3 to 20 siloxane [(CH3)2-Si-O] units (molecular weight 200-1500). Platinum can be detected in implant gels at levels of approximately 700 micrograms/kg by ICP-MS. The major component of implant gels appears to be high molecular weight silicone polymers (HM-silicones) too large to be detected by GC. However, these HM-silicones can be converted almost quantitatively (80% by mass) to LM-silicones by heating implant gels at 150-180 degrees C for several hours. We also studied the rates at which LM-silicones and platinum leak through the intact implant outer shell into the surrounding media under a variety of conditions. Leakage of silicones was greatest when the surrounding medium was lipid-rich, and up to 10 mg/day LM-silicones was observed to diffuse into a lipid-rich medium per 250 g of implant at 37 degrees C. This rate of leakage was maintained over a 7-day experimental period. Similarly, platinum was

  15. Covalent biofunctionalization of silicon nitride surfaces

    Arafat, A.; Giesbers, M.; Rosso, M.; Sudhölter, E.J.R.; Schroën, C.G.P.H.; White, R.G.; Li Yang,; Linford, M.R.; Zuilhof, H.

    2007-01-01

    Covalently attached organic monolayers on etched silicon nitride (SixN4; x 3) surfaces were prepared by reaction of SixN4-coated wafers with neat or solutions of 1-alkenes and 1-alkynes in refluxing mesitylene. The surface modification was monitored by measurement of the static water contact angle,

  16. Multimodal Electrothermal Silicon Microgrippers for Nanotube Manipulation

    Nordström Andersen, Karin; Petersen, Dirch Hjorth; Carlson, Kenneth

    2009-01-01

    Microgrippers that are able to manipulate nanoobjects reproducibly are key components in 3-D nanomanipulation systems. We present here a monolithic electrothermal microgripper prepared by silicon microfabrication, and demonstrate pick-and-place of an as-grown carbon nanotube from a 2-D array onto...

  17. Properties of native and immobilised preparations of. beta. -D-glucosidase from Aspergillus niger

    Woodward, J.; Wohlpart, D.L.

    1982-01-01

    The enzyme ..beta..-D-glucosidase from Aspergillus niger has been immobilised through its carbohydrate moiety on concanavalin A-Sepharose and on cyanogen bromide-activated Sepharose after aminoalkylation of the carbohydrate side chains of the enzyme. For comparison, the enzyme was also immobilised on microcrystalline cellulose through its protein moiety. High retention of activity and a decrease in K/sub m/ and V/sub max/ were observed when ..beta..-D-glucosidase was immobilised by these methods. An increase in the thermal stability of the immobilised ..beta..-D-glucosidase preparations over the soluble enzyme was achieved if it was treated with glutaraldehyde before its adsorption on concanavalin A-Sepharose or if the enzyme immobilised on cyanogen bromide-activated Sepharose was subsequently treated with glutaralydehyde. Treatment of ..beta..-D-glucosidase immobilised on microcrystalline cellulose with glutaraldehyde hardy increased its thermal stability over the soluble enzyme.

  18. Properties of native and immobilised preparations of beta-d-glucosidase from Aspergillus niger

    Woodward, J.; Wohlpart, D.L.

    1982-04-01

    The enzyme beta-glucosidase from Aspergillus niger has been immobilised through its carbohydrate moiety on concanavalin A-Sepharose and on cyanogen bromide-activated Sepharose after aminoalkylation of the carbohydrate side chains of the enzyme. For comparison, the enzyme was also immobilised on microcrystalline cellulose through its protein moiety. High retention of activity and a decrease in Km and Vmax were observed when beta-D-glucosidase was immobilised by these methods. An increase in the thermal stability of the immobilized beta-D-glucosidase preparations over the soluble enzyme was achieved if it was treated with glutaraldehyde before its adsorption on concanavalin A-Sepharose or if the enzyme immobilised on cyanogen bromide-activated Sepharose was subsequently treated with glutaraldehyde. Treatment of beta-D-glucosidase immobilised on microcrystalline cellulose with glutaraldehyde hardly increased its thermal stability over the soluble enzyme. (Refs. 24).

  19. Preparation, Characterization, and Cationic Functionalization of Cellulose-Based Aerogels for Wastewater Clarification

    Yang Hu

    2016-01-01

    Full Text Available Aerogels are a series of materials with porous structure and light weight which can be applied to many industrial divisions as insulators, sensors, absorbents, and cushions. In this study, cellulose-based aerogels (aerocelluloses were prepared from cellulosic material (microcrystalline cellulose in sodium hydroxide/water solvent system followed by supercritical drying operation. The average specific surface area of aerocelluloses was 124 m2/g. The nitrogen gas (N2 adsorption/desorption isotherms revealed type H1 hysteresis loops for aerocelluloses, suggesting that aerocelluloses may possess a porous structure with cylindrically shaped pores open on both ends. FTIR and XRD analyses showed that the crystallinity of aerocelluloses was significantly decreased as compared to microcrystalline cellulose and that aerocelluloses exhibited a crystalline structure of cellulose II as compared to microcrystalline cellulose (cellulose I. To perform cationic functionalization, a cationic agent, (3-chloro-2-hydroxypropyl trimethylammonium chloride, was used to introduce positively charged sites on aerocelluloses. The cationized aerocelluloses exhibited a strong ability to remove anionic dyes from wastewater. Highly porous and low cost aerocelluloses prepared in this study would be also promising as a fast absorbent for environmental pollutants.

  20. Silicon heterojunction transistor

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  1. The chemistry of silicon

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  2. Silicon Microspheres Photonics

    Serpenguzel, A.

    2008-01-01

    Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

  3. A study of the compressibility and properties of tablets from co-processed dry binder composed of microcrystalline cellulose and glyceryl monostearate.

    Muchová, Sandra

    2013-01-01

    The paper studies the co-processed dry binder LubriTose™ MCC from the viewpoint of energy evaluation of the compression process, strength and disintegration time of tablets. The results were compared with the identical evaluation of physical mixtures of microcrystalline cellulose with several types of lubricants. LubriTose™ MCC showed the lowest value of energy for friction, the highest value of energy accumulated by the tablet, and the highest plasticity of all tableting materials under stud...

  4. Application of radiochemistry to the preparation of high-purity silicon; Application de la radiochimie a la preparation de silicium de purete elevee; Primenenie radiokhimii dlya prigotovleniya kremniya vysokoj chistoty; Aplicacion de la radioquimica a la preparacion de silicio de elevada pureza

    Ichimiya, Toeao; Baba, Hideo; Nozaki, Tadashi [Electrical Communication Laboratory, Musashino-Shi, Tokyo (Japan)

    1962-01-15

    Radiochemical studies on the preparation of highly pure silicon for semiconductor use provided various useful information and tools for development of the process. The behaviour of phosphorus impurity during the purification steps of recrystallization and zone refining was followed by using radioactive phosphorus as tracer. The results showed that in each step, hydrolysed products suspended in the silicon tetraiodide played an important role in removing not only phosphorus but also other impurity elements. Activation analysis was applied to the determination of the arsenic concentration throughout the process and it was indicated that this could be reduced to the order of 10{sup -3} ppm after fractional distillation. It was also indicated, by neutron activation analysis, that elemental silicon, after thermal decomposition of the iodide, usually contained several ppm iodine, but its concentration could be reduced by one order of magnitude by a simple fusion. The absorption of soft {gamma}-rays has been applied to the determination of iodine concentration in the iodination gas stream and it has been found that the principle could be applied to the automatic control of the iodination reaction with further development of the technique. (author) [French] Les etudes radiochimiques sur la preparation du silicium de grande purete destine a la fabrication de semi-conducteurs, ont fourni divers renseignements utiles ainsi que d'excellents moyens pour la mise au point de l'operation. Les auteurs ont suivi le comportement des impuretes de phosphore pendant les stades successifs de la recristallisation et du raffinage par zones en utilisant du phosphore radioactif comme indicateur. Les resultats ont montre qu'a chaque stade, les produits de l'hydrolyse en suspension dans le tetraiodure de silicium jouaient un role important dans l'elimination non seulement du phosphore mais encore d'autres impuretes. Pendant tout le processus, les auteurs ont eu recours a l'analyse par

  5. High-density oxidized porous silicon

    Gharbi, Ahmed; Souifi, Abdelkader; Remaki, Boudjemaa; Halimaoui, Aomar; Bensahel, Daniel

    2012-01-01

    We have studied oxidized porous silicon (OPS) properties using Fourier transform infraRed (FTIR) spectroscopy and capacitance–voltage C–V measurements. We report the first experimental determination of the optimum porosity allowing the elaboration of high-density OPS insulators. This is an important contribution to the research of thick integrated electrical insulators on porous silicon based on an optimized process ensuring dielectric quality (complete oxidation) and mechanical and chemical reliability (no residual pores or silicon crystallites). Through the measurement of the refractive indexes of the porous silicon (PS) layer before and after oxidation, one can determine the structural composition of the OPS material in silicon, air and silica. We have experimentally demonstrated that a porosity approaching 56% of the as-prepared PS layer is required to ensure a complete oxidation of PS without residual silicon crystallites and with minimum porosity. The effective dielectric constant values of OPS materials determined from capacitance–voltage C–V measurements are discussed and compared to FTIR results predictions. (paper)

  6. Enhancement of dielectric permittivity by incorporating PDMS-PEG multiblock copolymers in silicone elastomers

    A Razak, Aliff Hisyam; Szabo, Peter; Skov, Anne Ladegaard

    2015-01-01

    A silicone elastomer from PDMS-PEG multiblock copolymer has been prepared by use of silylation reactions for both copolymer preparation and crosslinking. The dielectric and mechanical properties of the silicone elastomers were carefully investigated, as well as the morphology of the elastomers wa...... to a significantly increased dielectric permittivity. The conductivity also remained low due to the resulting discontinuity in PEG within the silicone matrix....

  7. Hydrogen isotopic substitution experiments in nanostructured porous silicon

    Palacios, W.D. [Facultad de Ciencias Exactas y Naturales y Agrimensura - (UNNE), Avenida Libertad 5500, 3400 Corrientes (Argentina); Koropecki, R.R. [INTEC (CONICET-UNL), Gueemes 3450, 3000 Santa Fe (Argentina)], E-mail: rkoro@intec.ceride.gov.ar; Arce, R.D. [INTEC (CONICET-UNL), Gueemes 3450, 3000 Santa Fe (Argentina); Busso, A. [Facultad de Ciencias Exactas y Naturales y Agrimensura - (UNNE), Avenida Libertad 5500, 3400 Corrientes (Argentina)

    2008-04-30

    Nanostructured porous silicon is usually prepared by electrochemical anodization of monocrystalline silicon using a fluorine-rich electrolyte. As a result of this process, the silicon atoms conserve their original crystalline location, and many of the dangling bonds appearing on the surface of the nanostructure are saturated by hydrogen coming from the electrolyte. This work presents an IR study of the effects produced by partial substitution of water in the electrolytic solution by deuterium oxide. The isotopic effects on the IR spectra are analyzed for the as-prepared samples and for the samples subjected to partial thermal effusion of hydrogen and deuterium. We demonstrate that, although deuterium is chemically indistinguishable from hydrogen, it presents a singular behaviour when used in porous silicon preparation. We found that deuterium preferentially bonds forming Si-DH groups. A possible explanation of the phenomenon is presented, based on the different diffusivities of hydrogen and deuterium.

  8. Hydrogen isotopic substitution experiments in nanostructured porous silicon

    Palacios, W.D.; Koropecki, R.R.; Arce, R.D.; Busso, A.

    2008-01-01

    Nanostructured porous silicon is usually prepared by electrochemical anodization of monocrystalline silicon using a fluorine-rich electrolyte. As a result of this process, the silicon atoms conserve their original crystalline location, and many of the dangling bonds appearing on the surface of the nanostructure are saturated by hydrogen coming from the electrolyte. This work presents an IR study of the effects produced by partial substitution of water in the electrolytic solution by deuterium oxide. The isotopic effects on the IR spectra are analyzed for the as-prepared samples and for the samples subjected to partial thermal effusion of hydrogen and deuterium. We demonstrate that, although deuterium is chemically indistinguishable from hydrogen, it presents a singular behaviour when used in porous silicon preparation. We found that deuterium preferentially bonds forming Si-DH groups. A possible explanation of the phenomenon is presented, based on the different diffusivities of hydrogen and deuterium

  9. Formation and properties of porous silicon layers

    Vitanov, P.; Kamenova, M.; Dimova-Malinovska, D.

    1993-01-01

    Preparation, properties and application of porous silicon films are investigated. Porous silicon structures were formed by an electrochemical etching process resulting in selective dissolution of the silicon substrate. The silicon wafers used with a resistivity of 5-10Ω.cm were doped with B to concentrations 6x10 18 -1x10 19 Ω.cm -3 in the temperature region 950 o C-1050 o C. The density of each porous films was determined from the weight loss during the anodization and it depends on the surface resistivity of the Si wafer. The density decreases with decreasing of the surface resistivity. The surface of the porous silicon layers was studied by X-ray photoelectron spectroscopy which indicates the presence of SiF 4 . The kinetic dependence of the anode potential and the porous layer thickness on the time of anodization in a galvanostatic regime for the electrolytes with various HF concentration were studied. In order to compare the properties of the resulting porous layers and to establish the dependence of the porosity on the electrolyte, three types of electrolytes were used: concentrated HF, diluted HF:H 2 O=1:1 and ethanol-hydrofluoric solutions HF:C 2 H 5 OH:H 2 O=2:1:1. High quality uniform and reproducible layers were formed using aqueous-ethanol-hydrofluoric electrolyte. Both Kikuchi's line and ring patterns were observed by TEM. The porous silicon layer was single crystal with the same orientation as the substrate. The surface shows a polycrystalline structure only. The porous silicon layers exhibit visible photoluminescence (PL) at room temperature under 480 nm Ar + laser line excitation. The peak of PL was observed at about 730 nm with FWHM about 90 nm. Photodiodes was made with a W-porous silicon junction. The current voltage and capacity voltage characteristics were similar to those of an isotype heterojunction diode. (orig.)

  10. Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

    Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

    1993-01-01

    Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

  11. High performance multilayered nano-crystalline silicon/silicon-oxide light-emitting diodes on glass substrates

    Darbari, S; Shahmohammadi, M; Mortazavi, M; Mohajerzadeh, S [Thin Film and Nano-Electronic Laboratory, School of ECE, University of Tehran, Tehran (Iran, Islamic Republic of); Abdi, Y [Nano-Physics Research Laboratory, Department of Physics, University of Tehran, Tehran (Iran, Islamic Republic of); Robertson, M; Morrison, T, E-mail: mohajer@ut.ac.ir [Department of Physics, Acadia University, Wolfville, NS (Canada)

    2011-09-16

    A low-temperature hydrogenation-assisted sequential deposition and crystallization technique is reported for the preparation of nano-scale silicon quantum dots suitable for light-emitting applications. Radio-frequency plasma-enhanced deposition was used to realize multiple layers of nano-crystalline silicon while reactive ion etching was employed to create nano-scale features. The physical characteristics of the films prepared using different plasma conditions were investigated using scanning electron microscopy, transmission electron microscopy, room temperature photoluminescence and infrared spectroscopy. The formation of multilayered structures improved the photon-emission properties as observed by photoluminescence and a thin layer of silicon oxy-nitride was then used for electrical isolation between adjacent silicon layers. The preparation of light-emitting diodes directly on glass substrates has been demonstrated and the electroluminescence spectrum has been measured.

  12. In-situ Raman spectroscopy. A method to study and control the growth of microcrystalline silicon for thin-film solar cells

    Muthmann, Stefan

    2012-08-22

    This work deals with the design and application of a novel experiment, which enables in-situ Raman measurements during the parallel plate plasma enhanced chemical vapor deposition (PECVD) of {mu}cSi:H. Measurements of the crystalline volume fraction (I{sub C}{sup RS}) and the temperature of a growing film are carried out using the novel setup. To enable in-situ Raman measurement of central regions of the coated substrate in a PECVD system, optical access under normal incidence is necessary. An experimental setup in which an optical feed-through was integrated into a PECVD electrode was developed. This setup introduces a disturbance to the electrical field which sustains the plasma. By designing metallic shields the impact of the feed through was reduced considerably at low optical losses. The homogeneity of films deposited with the novel setup in different growth regimes was studied. A correlation between the magnitude of the inhomogeneity caused by the feed-through and the characteristics of the deposition regimes is found. Raman spectroscopy demands the illumination of a sample with a laser and the collection of the scattered radiation. Due to absorption of the laser light the temperature of the illuminated film is increased. Since the temperature determines the properties of a growing film the laser-induced temperature increase was studied. By pulsing the laser radiation of minimal temperature increase at maximal signal intensity was obtained. The crystalline volume fraction of a growing {mu}cSi:H layer was determined in-situ with the novel setup. A minimal temporal resolution of less than 17.5 s at sufficient signal-to-noise-ratio was achieved, which corresponds to less than 9 nm of deposited material during one measurement interval at the industrial standard growth rate of 0.5 nm/s. The obtained results were compared to depth resolved measurements which were carried out after the deposition. An excellent agreement between both methods validates the reliability of the in-situ method. The initial phase of deposition is of great importance for the performance of a {mu}cSi:H thin-film solar cell. Hence the dependence of the evolution of the crystalline volume fraction during initial layer growth on the properties of the underlying seed layer was studied in-situ. A seed layer dependent increase and subsequent stabilization of the crystalline volume fraction was observed. By actively controlling the deposition parameters based on these results it was possible to reduce the observed inhomogeneity of the Raman crystallinity in growth direction. A possible application of in-situ Raman spectroscopy as basis of an active process control was studied by testing the ability of in-situ Raman spectroscopy to detect fluctuations of the deposition parameters on the example of a disturbance of the process gas flow. It was possible to detect the reaction of the layer growth on a change of deposition conditions in-situ. By correlating the in-situ measurements to results obtained on solar-cells it was found that - unless the process fluctuation happens during the initial phase of deposition - it is possible to maintain state-of-the art solar cell performance by an active process control. By modulating the plasma emission synchronized to the Raman measurements the signal-to-noise level of the Raman measurements was reduced. Two deposition regimes were distinguished by their characteristic plasma induced temperature increase. In situ measurements show that an active control of the substrate heater results in a stabilized temperature of the growing layer throughout the deposition of a {mu}cSi:H film. (orig.)

  13. Reduction of the phosphorus contamination for plasma deposition of p—i—n microcrystalline silicon solar cells in a single chamber

    Guang-Hong, Wang; Xiao-Dan, Zhang; Sheng-Zhi, Xu; Xin-Xia, Zheng; Chang-Chun, Wei; Jian, Sun; Shao-Zhen, Xiong; Xin-Hua, Geng; Ying, Zhao

    2010-01-01

    This paper investigates several pretreatment techniques used to reduce the phosphorus contamination between solar cells. They include hydrogen plasma pretreatment, deposition of a p-type doped layer, i-a-Si:H or μc-Si:H covering layer between solar cells. Their effectiveness for the pretreatment is evaluated by means of phosphorus concentration in films, the dark conductivity of p-layer properties and cell performance. (cross-disciplinary physics and related areas of science and technology)

  14. Water-induced charge transport in tablets of microcrystalline cellulose of varying density: dielectric spectroscopy and transient current measurements

    Nilsson, Martin; Alderborn, Goeran; Stroemme, Maria

    2003-01-01

    Room temperature dielectric frequency response data taken over 13 decades in frequency on microcrystalline cellulose (MCC) tablets of varying density are presented. The frequency response shows on three different processes: the first one is a high-frequency relaxation process whose magnitude increases and reaches a plateau as the tablet density increases. This process is associated with orientational motions of local chain segments via glycosidic bonds. The second relaxation process, related to the presence of water in the MCC matrix, is insensitive to changes in tablet density. At lower frequencies, dc-like imperfect charge transport dominates the dielectric spectrum. The dc conductivity was found to decrease with increasing tablet density and increase exponentially with increasing humidity. Transient current measurements indicated that two different ionic species, protons and OH - ions, lied behind the observed conductivity. At ambient humidity of 22%, only one in a billion of the water molecules present in the tablet matrix participated in long range dc conduction. The diffusion coefficient of the protons and OH - ions were found to be of the order of 10 -9 cm 2 /s, which is the same as for small salt building ions in MCC. This shows that ionic drugs leaving a tablet matrix may diffuse in the same manner as the constituent ions of water and, thus, elucidates the necessity to understand the water transport properties of excipient materials to be able to tailor the drug release process from pharmaceutical tablets

  15. Advax™, a novel microcrystalline polysaccharide particle engineered from delta inulin, provides robust adjuvant potency together with tolerability and safety.

    Petrovsky, Nikolai; Cooper, Peter D

    2015-11-04

    There is an ongoing need for new adjuvants to facilitate development of vaccines against HIV, tuberculosis, malaria and cancer, amongst many others. Unfortunately, the most potent adjuvants are often associated with toxicity and safety issues. Inulin, a plant-derived polysaccharide, has no immunological activity in its native soluble form but when crystallized into a stable microcrystalline particulate from (delta inulin) acquires potent adjuvant activity. Delta inulin has been shown to enhance humoral and cellular immune responses against a broad range of co-administered viral, bacterial, parasitic and toxin antigens. Inulin normally crystallizes as large heterogeneous particles with a broad size distribution and variable solubility temperatures. To ensure reproducible delta inulin particles with a consistent size distribution and temperature of solubility, a current Good Manufacturing Practice (cGMP) process was designed to produce Advax™ adjuvant. In its cCMP form, Advax™ adjuvant has proved successful in human trials of vaccines against seasonal and pandemic influenza, hepatitis B and insect sting anaphylaxis, enhancing antibody and T-cell responses while being safe and well tolerated. Advax™ adjuvant represents a novel human adjuvant that enhances both humoral and cellular immunity. This review describes the discovery and development of Advax™ adjuvant and research into its unique mechanism of action. Copyright © 2015 Elsevier Ltd. All rights reserved.

  16. XMCD study of the local magnetic and structural properties of microcrystalline NdFeB-based alloys

    Menushenkov, A. P.; Ivanov, V. G.; Shchetinin, I. V.; Zhukov, D. G.; Menushenkov, V. P.; Rudnev, I. A.; Ivanov, A. A.; Wilhelm, F.; Rogalev, A.; Savchenko, A. G.

    2017-01-01

    X-ray Magnetic Circular Dichroism (XMCD) technique was used to investigate local magnetic properties of microcrystalline Nd10.4Zr4.0Fe79.2B6.4 samples, oriented along either easy or hard magnetization direction. The Nd L 2,3 and Fe K edge XMCD spectra were measured at room temperature under a magnetic field of T. A very strong dependence of XMCD spectra on the sample orientation has been observed at the Nd L 2,3-edges, whereas the Fe K-edge XMCD spectra are found to be practically isotropic. This result indicates that magnetic anisotropy of NdFeB-based alloys originates from the Nd sublattice. In addition, element selective magnetization curves have been recorded by measuring the intensity of XMCD signals as a function of an applied magnetic field up to T. To find a correlation between local and macroscopic magnetic properties of studied samples we compared these data with magnetization curves, measured by vibrating sample magnetometer up to T. Results are important for understanding the origin of high-coercivity state in NdFeB-based intermetallic compounds.

  17. Functionalization of Microcrystalline Cellulose with N,N-dimethyldodecylamine for the Removal of Congo Red Dye from an Aqueous Solution

    Dongying Hu

    2014-08-01

    Full Text Available Microcrystalline cellulose (MCC was functionalized with quaternary amine groups for use as an adsorbent to remove Congo Red dye (CR from aqueous solution. The ultrasonic pretreatment of MCC was investigated during its functionalization. Characterization was conducted using infrared spectroscopy (FT-IR, X-ray photoelectron spectroscopy (XPS, X-ray diffraction (XRD, and scanning electron microscopy (SEM. The batch adsorption of the functionalized MCC was studied to evaluate the effects of dye concentration, pH of solution, temperature, and NaCl concentration on the adsorption CR. The adsorbent (FM-1 obtained using ultrasonic pretreatment of MCC under 10.8 kJ•g–1 exhibited an adsorption capacity of 304 mg•g–1 at initial pH under a dose of 0.1 g•L–1 and initial concentration of 80 mg•L–1. After functionalization, the FT-IR and XPS results indicated that the quaternary amine group was successfully grafted onto the cellulose, the surface was transformed to be coarse and porous, and the crystalline structure of the original cellulose was disrupted. FM-1 has been shown to be a promising and efficient adsorbent for the removal of CR from an aqueous solution.

  18. Low cost silicon solar array project large area silicon sheet task: Silicon web process development

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Blais, P. D.; Davis, J. R., Jr.

    1977-01-01

    Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

  19. Printed Barium Strontium Titanate capacitors on silicon

    Sette, Daniele [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Luxembourg Institute of Science and Technology LIST, Materials Research and Technology Department, L-4422 Belvaux (Luxembourg); Kovacova, Veronika [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Defay, Emmanuel, E-mail: emmanuel.defay@list.lu [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Luxembourg Institute of Science and Technology LIST, Materials Research and Technology Department, L-4422 Belvaux (Luxembourg)

    2015-08-31

    In this paper, we show that Barium Strontium Titanate (BST) films can be prepared by inkjet printing of sol–gel precursors on platinized silicon substrate. Moreover, a functional variable capacitor working in the GHz range has been made without any lithography or etching steps. Finally, this technology requires 40 times less precursors than the standard sol–gel spin-coating technique. - Highlights: • Inkjet printing of Barium Strontium Titanate films • Deposition on silicon substrate • Inkjet printed silver top electrode • First ever BST films thinner than 1 μm RF functional variable capacitor that has required no lithography.

  20. Field assisted photoemission by silicon photocathodes

    Aboubacar, A.; Dupont, M.; El Manouni, A.; Querrou, M.; Says, L.P.

    1991-01-01

    Silicon photocathodes with arrays of tips have been prepared using microlithographic techniques. Current emission due to field effect has been measured in the case of heavy and weakly doped boron Silicon. An Argon continuous laser has been used to produce photocurrent. An instantaneous current (600 μA) with a moderate laser power (83 mW), has been produced on weakly doped photocathodes. This current corresponds to an average quantum yield (purely photoelectric) of about 1.7%, and a local current density in the range of a few 10 6 A m -2

  1. Materials of construction for silicon crystal growth

    Leipold, M. H.; Odonnell, T. P.; Hagan, M. A.

    1980-01-01

    The performance of materials for construction and in contact with molten silicon for crystal growth is presented. The basis for selection considers physical compatibility, such as thermal expansion and strength, as well as chemical compatibility as indicated by contamination of the silicon. A number of new high technology materials are included as well as data on those previously used. Emphasis is placed on the sources and processing of such materials in that results are frequently dependent on the way a material is prepared as well as its intrinsic constituents.

  2. High photoconductive hydrogenated silicon by reactive sputtering in helium containing atmosphere

    Ohbiki, Tohru; Imura, Takeshi; Hiraki, Akio

    1982-01-01

    Mixed phase of amorphous and microcrystalline silicon-hydrogen alloys has been fabricated by reactive sputtering in He containing H 2 of which mole fraction is less than about 5 mole%. The degree of the crystallization, evaluated by electron microscopy and optical absorption spectroscopy, becomes high as the amount of H 2 in the atmosphere increases. The conductivity in dark and photoconductivity increase as the partial pressure of H 2 increases (form 0 to 1 mole%) and also as the pressure during sputtering increases. This increase in conductivity and photoconductivity is supposed to be related to the development of microcrystals. The highest photoconductivity is observed at the H 2 mole fraction of about 1 mole%. This film contains a small amount of microcrystals and show the photoconductivity higher by 2 orders of magnitude than that in a film sputter-deposited in Ar and H 2 atmosphere in the same apparatus. (author)

  3. High photoconductive hydrogenated silicon by reactive sputtering in helium containing atmosphere

    Ohbiki, Tohru; Imura, Takeshi; Hiraki, Akio

    1982-08-01

    Mixed phase of amorphous and microcrystalline silicon-hydrogen alloys has been fabricated by reactive sputtering in He containing H/sub 2/ of which mole fraction is less than about 5 mole%. The degree of the crystallization, evaluated by electron microscopy and optical absorption spectroscopy, becomes high as the amount of H/sub 2/ in the atmosphere increases. The conductivity in dark and photoconductivity increase as the partial pressure of H/sub 2/ increases (form 0 to 1 mole%) and also as the pressure during sputtering increases. This increase in conductivity and photoconductivity is supposed to be related to the development of microcrystals. The highest photoconductivity is observed at the H/sub 2/ mole fraction of about 1 mole%. This film contains a small amount of microcrystals and show the photoconductivity higher by 2 orders of magnitude than that in a film sputter-deposited in Ar and H/sub 2/ atmosphere in the same apparatus.

  4. Polycystalline silicon thin films for electronic applications

    Jaeger, Christian Claus

    2012-01-15

    with an activation energy of E{sub A}{sup poly-Si}=1.1 eV. By long-lasting tempering or a short high-temperature step finally the stable layer configuration substrate/Al+Si islands(hillocks)/poly-Si can be reached (E{sub A}{sup hillocks}=2.4 eV). The further main topic of this thesis is the study of the applicability of the poly-silicon layers fabricated by means of the ALILE and R-ALILE process for electronic applications. First thin-film transistors were studied. Additionally thin-film solar cells with microcrystalline silicon as absorber material on polycrystalline R-ALILE seed layers were fabricated. Finally the suitedness of the fabricated poly-silicon layers for crytographic applications were studied.

  5. Photo and electroluminescence of porous silicon layers

    Keshmini, S.H.; Samadpour, S.; Haji-Ali, E.; Rokn-Abadi, M.R.

    1995-01-01

    Porous silicon (PSi) layers were prepared by both chemical and electrochemical methods on n- and p-type Si substrates. In the former technique, light emission was obtained from p-type and n-type samples. It was found that intense light illumination during the preparation process was essential for PSi formation on n-type substrates. An efficient electrochemical cell with some useful features was designed for electrochemical etching of silicon. Various preparation parameters were studied and photoluminescence emissions ranging from dark red to light blue were obtained from PSi samples prepared on p-type substrates. N-type samples produced emission ranging from dark red to orange yellow. Electroluminescence of porous silicon samples showed that the color of the emission was the same as the photoluminescence color of the sample, and its intensity and duration depended on the current density passed through the sample. The effects of exposure of samples to air, storage in vacuum and heat treatment in air on luminescence intensity of the samples and preparation of patterned porous layers were also studied. (author)

  6. 耐漏电起痕硅橡胶的制备及应用研究进展%Progress in the Preparation and Application of Tracking and Erosion Resistant Silicone Rubber

    郭燕霞; 赖学军; 曾幸荣; 李红强; 张亚军; 方伟镇

    2017-01-01

    硅橡胶以其优异的电气绝缘性、憎水防污和耐污闪等性能而广泛应用于高压超高压电力电气设备及外绝缘领域.然而硅橡胶绝缘材料在长期使用过程中,在外界强电场放电作用下会发生漏电起痕破坏,致使材料失效甚至燃烧.这对电力系统与电气设备的安全运行,以及人们的生产和生活造成巨大的危害.因此,硅橡胶的耐漏电起痕研究吸引了越来越多研究者的关注.文中综述了近年来国内外关于耐漏电起痕硅橡胶的最新研究进展,分析了硅橡胶耐漏电起痕剂亟待解决的问题,并指出高效率、相容好、多功能的有机耐漏电起痕剂是耐电痕化硅橡胶的重要发展方向.%Silicone rubber is widely used in high-voltage and super-high voltage electrical equipments and outdoor insulation,due to its excellent electrical insulation,water-repellence and flashover resistance.However,when served for a long time,silicone rubber insulation materials may suffer from tracking and erosion,resulting in insulation failure and even fire,because of strong external discharges.This caused great harm to the safety of the operation of power transmission systems and electrical equipment,as well as the industrial production and daily life of human.Therefore,research on the tracking and erosion resistance of silicone rubber attracted more and more attention.This paper reviewed the latest progress in the research of tracking and erosion resistant silicone rubber and analyzes the problems needed to be solved.Finally,it is pointed out that versatile organic agent for tracking and erosion resistance of silicone rubber with high efficiency and good compatibility is one of the most important developmental trends.

  7. Chiral silicon nanostructures

    Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

    2006-01-01

    Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

  8. Silicon web process development

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

    1981-01-01

    The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

  9. Silicon nanomaterials platform for bioimaging, biosensing, and cancer therapy.

    Peng, Fei; Su, Yuanyuan; Zhong, Yiling; Fan, Chunhai; Lee, Shuit-Tong; He, Yao

    2014-02-18

    Silicon nanomaterials are an important class of nanomaterials with great potential for technologies including energy, catalysis, and biotechnology, because of their many unique properties, including biocompatibility, abundance, and unique electronic, optical, and mechanical properties, among others. Silicon nanomaterials are known to have little or no toxicity due to favorable biocompatibility of silicon, which is an important precondition for biological and biomedical applications. In addition, huge surface-to-volume ratios of silicon nanomaterials are responsible for their unique optical, mechanical, or electronic properties, which offer exciting opportunities for design of high-performance silicon-based functional nanoprobes, nanosensors, and nanoagents for biological analysis and detection and disease treatment. Moreover, silicon is the second most abundant element (after oxygen) on earth, providing plentiful and inexpensive resources for large-scale and low-cost preparation of silicon nanomaterials for practical applications. Because of these attractive traits, and in parallel with a growing interest in their design and synthesis, silicon nanomaterials are extensively investigated for wide-ranging applications, including energy, catalysis, optoelectronics, and biology. Among them, bioapplications of silicon nanomaterials are of particular interest. In the past decade, scientists have made an extensive effort to construct a silicon nanomaterials platform for various biological and biomedical applications, such as biosensors, bioimaging, and cancer treatment, as new and powerful tools for disease diagnosis and therapy. Nonetheless, there are few review articles covering these important and promising achievements to promote the awareness of development of silicon nanobiotechnology. In this Account, we summarize recent representative works to highlight the recent developments of silicon functional nanomaterials for a new, powerful platform for biological and

  10. Rationally designed porous silicon as platform for optical biosensors

    Priano, G.; Acquaroli, L.N.; Lasave, L.C.; Battaglini, F.; Arce, R.D.; Koropecki, R.R.

    2012-01-01

    Optical porous silicon multilayer structures are able to work as sensitive chemical sensors or biosensors based in their optical response. An algorithm to simulate the optical response of these multilayers was developed, considering the optical properties of the individual layers. The algorithm allows designing and customizing the porous silicon structures according to a given application. The results obtained by the simulation were experimentally verified; for this purpose different photonic structures were prepared, such as Bragg reflectors and microcavities. Some of these structures have been derivatized by the introduction of aminosilane groups on the porous silicon surface. The algorithm also permits to simulate the effects produced by a non uniform derivatization of the multilayer. - Highlights: ► Mesoporous silicon structure ► Functionalization of mesoporous silicon as sensors ► Design of the one-dimensional photonic crystal ► Simulation of non-uniformity in covering the sensor structure

  11. Rationally designed porous silicon as platform for optical biosensors

    Priano, G. [INQUIMAE, DQIAyQF, FCEN, Universidad de Buenos Aires, Ciudad Universitaria, Pabellon 2 (C1428EHA) Buenos Aires (Argentina); Acquaroli, L.N.; Lasave, L.C. [Instituto De Desarrollo Tecnologico Para La Industria Quimica, UNL, CONICET, Gueemes 3450 (S3000GLN) Santa Fe (Argentina); Battaglini, F. [INQUIMAE, DQIAyQF, FCEN, Universidad de Buenos Aires, Ciudad Universitaria, Pabellon 2 (C1428EHA) Buenos Aires (Argentina); Arce, R.D., E-mail: rarce@intec.unl.edu.ar [Instituto De Desarrollo Tecnologico Para La Industria Quimica, UNL, CONICET, Gueemes 3450 (S3000GLN) Santa Fe (Argentina); Departamento De Materiales, Facultad De Ingenieria Quimica, UNL, Santiago del Estero 2829 (S3000) Santa Fe (Argentina); Koropecki, R.R. [Instituto De Desarrollo Tecnologico Para La Industria Quimica, UNL, CONICET, Gueemes 3450 (S3000GLN) Santa Fe (Argentina); Departamento De Materiales, Facultad De Ingenieria Quimica, UNL, Santiago del Estero 2829 (S3000) Santa Fe (Argentina)

    2012-08-01

    Optical porous silicon multilayer structures are able to work as sensitive chemical sensors or biosensors based in their optical response. An algorithm to simulate the optical response of these multilayers was developed, considering the optical properties of the individual layers. The algorithm allows designing and customizing the porous silicon structures according to a given application. The results obtained by the simulation were experimentally verified; for this purpose different photonic structures were prepared, such as Bragg reflectors and microcavities. Some of these structures have been derivatized by the introduction of aminosilane groups on the porous silicon surface. The algorithm also permits to simulate the effects produced by a non uniform derivatization of the multilayer. - Highlights: Black-Right-Pointing-Pointer Mesoporous silicon structure Black-Right-Pointing-Pointer Functionalization of mesoporous silicon as sensors Black-Right-Pointing-Pointer Design of the one-dimensional photonic crystal Black-Right-Pointing-Pointer Simulation of non-uniformity in covering the sensor structure.

  12. Research and development of photovoltaic power system. Study on growth mechanism of a-Si:H and preparation of the stable, high quality films; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon no seimaku kiko to kohinshitsuka

    Hirose, M [Hiroshima University, Hiroshima (Japan). Faculty of Engineering

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on research on a film forming mechanism for amorphous silicon for solar cells and its quality improvement. In in-situ observation on plasma CVD surface reaction by using the total reflection infrared absorbing spectroscopy, an observation on a real time basis was performed on the reaction process of an a-Si:H surface in contact with gas mixture plasma composed of SiH4 + CH4. In microscopic observation on initial processes of amorphous silicon growth, surface morphological change before and after a-Si:H deposition at 200{degree}C was observed by using an inter-atomic force microscope. The observation verified that a-Si:H has grown to an atomic layer. In research on defect density in a-Si:H fabricated under high-speed film forming conditions, analysis was made on correlation between the film forming speed at 250{degree}C and defect density in the film. Other research works include those on a high-quality a-SiGe:H film fabricated by using the nanometer film forming/hydrogen plasma annealing method, modulated doping into multi-layer films of a-Si:H/a-Ge:H, and thin film transistor using very thin multi layer films of a-Si:H/a-Ge:H. 5 refs., 12 figs.

  13. Periodically poled silicon

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  14. Nonlinear silicon photonics

    Tsia, Kevin K.; Jalali, Bahram

    2010-05-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

  15. Nonlinear silicon photonics

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  16. Metallization of DNA on silicon surface

    Puchkova, Anastasiya Olegovna; Sokolov, Petr; Petrov, Yuri Vladimirovich; Kasyanenko, Nina Anatolievna

    2011-01-01

    New simple way for silver deoxyribonucleic acid (DNA)-based nanowires preparation on silicon surface was developed. The electrochemical reduction of silver ions fixed on DNA molecule provides the forming of tightly matched zonate silver clusters. Highly homogeneous metallic clusters have a size about 30 nm. So the thickness of nanowires does not exceed 30–50 nm. The surface of n-type silicon monocrystal is the most convenient substrate for this procedure. The comparative analysis of DNA metallization on of n-type silicon with a similar way for nanowires fabrication on p-type silicon, freshly cleaved mica, and glass surface shows the advantage of n-type silicon, which is not only the substrate for DNA fixation but also the source of electrons for silver reduction. Images of bound DNA molecules and fabricated nanowires have been obtained using an atomic force microscope and a scanning ion helium microscope. DNA interaction with silver ions in a solution was examined by the methods of ultraviolet spectroscopy and circular dichroism.

  17. Triple-junction thin-film silicon solar cell fabricated on periodically textured substrate with a stabilized efficiency of 13.6%

    Sai, Hitoshi; Matsui, Takuya; Koida, Takashi; Matsubara, Koji; Kondo, Michio; Sugiyama, Shuichiro; Katayama, Hirotaka; Takeuchi, Yoshiaki; Yoshida, Isao

    2015-05-01

    We report a high-efficiency triple-junction thin-film silicon solar cell fabricated with the so-called substrate configuration. It was verified whether the design criteria for developing single-junction microcrystalline silicon (μc-Si:H) solar cells are applicable to multijunction solar cells. Furthermore, a notably high short-circuit current density of 32.9 mA/cm2 was achieved in a single-junction μc-Si:H cell fabricated on a periodically textured substrate with a high-mobility front transparent contacting layer. These technologies were also combined into a-Si:H/μc-Si:H/μc-Si:H triple-junction cells, and a world record stabilized efficiency of 13.6% was achieved.

  18. Silicon germanium mask for deep silicon etching

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  19. Silicon germanium mask for deep silicon etching

    Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

    2014-01-01

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  20. Synthesis, properties and reactivity of intramolecular hypercoordinate silicon complexes

    Nikolin, A A; Negrebetsky, V V

    2014-01-01

    The state of the art of the chemistry of hypercoordinate silicon compounds is analyzed. Published data on the current top-priority approaches to the preparative synthesis of these compounds and on their properties, structures and reactivity are summarized and generalized. Relying on the results obtained by modern physicochemical methods, the possible mechanisms of stereodynamic processes occurring in the coordination units of hypercoordinate silicon complexes are discussed. The bibliography includes 157 references

  1. Structural, optical and electrical properties of quasi-monocrystalline silicon thin films obtained by rapid thermal annealing of porous silicon layers

    Hajji, M.; Khardani, M.; Khedher, N.; Rahmouni, H.; Bessais, B.; Ezzaouia, H.; Bouchriha, H.

    2006-01-01

    Quasi-mono-crystalline silicon (QMS) layers have a top surface like crystalline silicon with small voids in the body. Such layers are reported to have a higher absorption coefficient than crystalline silicon at the interesting range of the solar spectrum for photovoltaic application. In this work we present a study of the structural, optical and electrical properties of quasimonocrystalline silicon thin films. Quasimonocrystalline silicon thin films were obtained from porous silicon, which has been annealed at a temperature ranging from 950 to 1050 deg. C under H 2 atmosphere for different annealing durations. The porous layers were prepared by conventional electrochemical anodization using a double tank cell and a HF / Ethanol electrolyte. Porous silicon is formed on highly doped p + -type silicon substrates that enable us to prevent back contacts for the anodization. Atomic Force Microscope (AFM) was used to study the morphological quality of the prepared layers. Optical properties were extracted from transmission and reflectivity spectra. Dark I-V characteristics were used to determine the electrical conductivity of quasimonocrystalline silicon thin films. Results show an important improvement of the absorption coefficient of the material and electrical conductivity reaches a value of twenty orders higher than that of starting mesoporous silicon

  2. Optical properties of erbium-doped porous silicon waveguides

    Najar, A. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B P. 80518, 22305 Lannion Cedex (France); Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Charrier, J. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B P. 80518, 22305 Lannion Cedex (France)]. E-mail: joel.charier@univ-rennes1.fr; Ajlani, H. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Lorrain, N. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B P. 80518, 22305 Lannion Cedex (France); Elhouichet, H. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Oueslati, M. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Haji, L. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B P. 80518, 22305 Lannion Cedex (France)

    2006-12-15

    Planar and buried channel porous silicon waveguides (WG) were prepared from p{sup +}-type silicon substrate by a two-step anodization process. Erbium ions were incorporated into pores of the porous silicon layers by an electrochemical method using ErCl{sub 3}-saturated solution. Erbium concentration of around 10{sup 20} at/cm{sup 3} was determined by energy-dispersive X-ray analysis performed on SEM cross-section. The luminescence properties of erbium ions in the IR range were determined and a luminescence time decay of 420 {mu}s was measured. Optical losses were studied on these WG. The increased losses after doping were discussed.

  3. Method of production of hollow silicon nitride articles

    Parr, N.L.; Brown, R.L.

    1971-01-01

    The hollow articles prepared according to the invention have a high density, exhibit no internal stresses and correspond to high demands of tolerance and surface quality. One obtains these by flame spraying silicon powder on a pre-heated form designed with separating agent - e.g. NaCl. After removing the form, the silicon is nitridated to silicon nitride by heating in N 2 or in an atmosphere of ammonia. This process can be interrupted if the article is also to be mechanically processed, and then the nitridation can be completed. (Hoe/LH) [de

  4. Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon

    Agocs, E.; Petrik, P.; Milita, S.; Vanzetti, L.; Gardelis, S.; Nassiopoulou, A.G.; Pucker, G.; Balboni, R.; Fried, M.

    2011-01-01

    We propose to analyze ellipsometry data by using effective medium approximation (EMA) models. Thanks to EMA, having nanocrystalline reference dielectric functions and generalized critical point (GCP) model the physical parameters of two series of samples containing silicon nanocrystals, i.e. silicon rich oxide (SRO) superlattices and porous silicon layers (PSL), have been determined. The superlattices, consisting of ten SRO/SiO 2 layer pairs, have been prepared using plasma enhanced chemical vapor deposition. The porous silicon layers have been prepared using short monopulses of anodization current in the transition regime between porous silicon formation and electropolishing, in a mixture of hydrofluoric acid and ethanol. The optical modeling of both structures is similar. The effective dielectric function of the layer is calculated by EMA using nanocrystalline components (nc-Si and GCP) in a dielectric matrix (SRO) or voids (PSL). We discuss the two major problems occurring when modeling such structures: (1) the modeling of the vertically non-uniform layer structures (including the interface properties like nanoroughness at the layer boundaries) and (2) the parameterization of the dielectric function of nanocrystals. We used several techniques to reduce the large number of fit parameters of the GCP models. The obtained results are in good agreement with those obtained by X-ray diffraction and electron microscopy. We investigated the correlation of the broadening parameter and characteristic EMA components with the nanocrystal size and the sample preparation conditions, such as the annealing temperatures of the SRO superlattices and the anodization current density of the porous silicon samples. We found that the broadening parameter is a sensitive measure of the nanocrystallinity of the samples, even in cases, where the nanocrystals are too small to be visible for X-ray scattering. Major processes like sintering, phase separation, and intermixing have been

  5. Process for making silicon

    Levin, Harry (Inventor)

    1987-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  6. Transformational silicon electronics

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  7. Silicon diatom frustules as nanostructured photoelectrodes.

    Chandrasekaran, Soundarrajan; Sweetman, Martin J; Kant, Krishna; Skinner, William; Losic, Dusan; Nann, Thomas; Voelcker, Nicolas H

    2014-09-18

    In the quest for solutions to meeting future energy demands, solar fuels play an important role. A particularly promising example is photocatalysis since even incremental improvements in performance in this process are bound to translate into significant cost benefits. Here, we report that semiconducting and high surface area 3D silicon replicas prepared from abundantly available diatom fossils sustain photocurrents and enable solar energy conversion.

  8. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    Zahra Ostadmahmoodi Do

    2016-06-01

    Full Text Available Nanowires (NWs are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW, is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method for producing nanowires of the same substrate material. The process conditions are adjusted to find the best quality of Si NWs. Morphology of Si NWs is studied using a field emission scanning electron microscopic technique. An energy dispersive X-Ray analyzer is also used to provide elemental identification and quantitative compositional information. Subsequently, Schottky type solar cell samples are fabricated on Si and Si NWs using ITO and Ag contacts. The junction properties are calculated using I-V curves in dark condition and the solar cell I-V characteristics are obtained under incident of the standardized light of AM1.5. The results for the two mentioned Schottky solar cell samples are compared and discussed. An improvement in short circuit current and efficiency of Schottky solar cell is found when Si nanowires are employed.

  9. Silicon micromachined vibrating gyroscopes

    Voss, Ralf

    1997-09-01

    This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

  10. Silicon etch process

    Day, D.J.; White, J.C.

    1984-01-01

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  11. Silicon integrated circuit process

    Lee, Jong Duck

    1985-12-01

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  12. Silicon integrated circuit process

    Lee, Jong Duck

    1985-12-15

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  13. Silicon nanowire hybrid photovoltaics

    Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

    2010-01-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  14. Silicon nanowire hybrid photovoltaics

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  15. Joining elements of silicon carbide

    Olson, B.A.

    1979-01-01

    A method of joining together at least two silicon carbide elements (e.g.in forming a heat exchanger) is described, comprising subjecting to sufficiently non-oxidizing atmosphere and sufficiently high temperature, material placed in space between the elements. The material consists of silicon carbide particles, carbon and/or a precursor of carbon, and silicon, such that it forms a joint joining together at least two silicon carbide elements. At least one of the elements may contain silicon. (author)

  16. Radiation cured silicone rubber articles

    DuPont, J.G.; Goodwin, P.A.

    1984-01-01

    A process for making radiation cured silicone rubber articles is disclosed wherein a hydroxyl-terminated polysilaxane having a molecular weight from about 50,000 to about 2,000,000, optionally modified by mixing with up to 85% of an end-stopped silicone rubber, is mixed with from about 10 to about 70 parts per hundred of rubber of a finely divided silica filler with a particle size in the reinforcing range and other inert fillers as determined by desired final properties; the composition so prepared is formed into the desired shape at room temperature; the article so formed is precured to improve the mechanical properties of the material with which it is made by exposure to ammonia gas, ammonium hydroxide, or to the vapors or solutions of a volatile amine at room temperature; and the precured article is irradiated with high energy electrons or gamma radiation to effect a permanent cure of the material from which the article is formed

  17. Recycling of silicon: from industrial waste to biocompatible nanoparticles for nanomedicine

    Kozlov, N. K.; Natashina, U. A.; Tamarov, K. P.; Gongalsky, M. B.; Solovyev, V. V.; Kudryavtsev, A. A.; Sivakov, V.; Osminkina, L. A.

    2017-09-01

    The formation of photoluminescent porous silicon (PSi) nanoparticles (NPs) is usually based on an expensive semiconductor grade wafers technology. Here, we report a low-cost method of PSi NPs synthesis from the industrial silicon waste remained after the wafer production. The proposed method is based on metal-assisted wet-chemical etching (MACE) of the silicon surface of cm-sized metallurgical grade silicon stones which leads to a nanostructuring of the surface due to an anisotropic etching, with subsequent ultrasound fracturing in water. The obtained PSi NPs exhibit bright red room temperature photoluminescence (PL) and demonstrate similar microstructure and physical characteristics in comparison with the nanoparticles synthesized from semiconductor grade Si wafers. PSi NPs prepared from metallurgical grade silicon stones, similar to silicon NPs synthesized from high purity silicon wafer, show low toxicity to biological objects that open the possibility of using such type of NPs in nanomedicine.

  18. Advances in silicon nanophotonics

    Hvam, Jørn Märcher; Pu, Minhao

    Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

  19. Integrated silicon optoelectronics

    Zimmermann, Horst

    2000-01-01

    'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

  20. Silicon microfabricated beam expander

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-01-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed

  1. Silicon microfabricated beam expander

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-03-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  2. Silicon microfabricated beam expander

    Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

    2015-03-30

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  3. Porous Silicon Nanowires

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  4. Nanostructured silicon for thermoelectric

    Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

    2011-06-01

    Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

  5. Study on Silicon detectors

    Gervino, G.; Boero, M.; Manfredotti, C.; Icardi, M.; Gabutti, A.; Bagnolatti, E.; Monticone, E.

    1990-01-01

    Prototypes of Silicon microstrip detectors and Silicon large area detectors (3x2 cm 2 ), realized directly by our group, either by ion implantation or by diffusion are presented. The physical detector characteristics and their performances determined by exposing them to different radioactive sources and the results of extensive tests on passivation, where new technological ways have been investigated, are discussed. The calculation of the different terms contributing to the total dark current is reported

  6. Performance Improvement of Microcrystalline p-SiC/i-Si/n-Si Thin Film Solar Cells by Using Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

    Hsin-Ying Lee

    2014-01-01

    Full Text Available The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1 to 512 cm−1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD results, the microcrystalline i-Si films with (111, (220, and (311 diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2 to 18.16 mA/cm2 and from 6.89% to 8.58%, respectively.

  7. Subwavelength silicon photonics

    Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

    2011-01-01

    With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

  8. Silicon microphotonic waveguides

    Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

    2004-01-01

    Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

  9. Amorphous silicon crystalline silicon heterojunction solar cells

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  10. Oxygen defect processes in silicon and silicon germanium

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

    2015-01-01

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  11. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  12. Oxygen defect processes in silicon and silicon germanium

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  13. Microfabrication, separations, and detection by mass spectrometry on ultrathin-layer chromatography plates prepared via the low-pressure chemical vapor deposition of silicon nitride onto carbon nanotube templates.

    Kanyal, Supriya S; Häbe, Tim T; Cushman, Cody V; Dhunna, Manan; Roychowdhury, Tuhin; Farnsworth, Paul B; Morlock, Gertrud E; Linford, Matthew R

    2015-07-24

    Microfabrication of ultrathin-layer chromatography (UTLC) plates via conformal deposition of silicon nitride by low-pressure chemical vapor deposition onto patterned carbon nanotube (CNT) scaffolds was demonstrated. After removal of the CNTs and hydroxylation, the resulting UTLC phase showed no expansion or distortion of their microfeatures and the absence/reduction of remaining nitrogenic species. Developing time of a mixture of lipophilic dyes on this UTLC plates was 86% shorter than on high-performance thin-layer chromatography (HPTLC) plates. A water-soluble food dye mixture was also separated resulting in low band broadening and reduced developing time compared to HPTLC. For the latter example, mobile phase optimization on a single UTLC plate consisted of 14 developments with different mobile phases, each preceded by a plate prewashing step. The same plate was again reused for additional 11 separations under varying conditions resulting in a development procedure with a mean separation efficiency of 233,000theoretical plates/m and a reduced mobile phase consumption of only 400μL. This repeated use proved the physical robustness of the ultrathin layer and its resistance to damage. The layer was highly suited for hyphenation to ambient mass spectrometry, including desorption electrospray ionization (DESI) mass spectrometry imaging and direct analysis in real time (DART) mass spectrometry. Copyright © 2015 Elsevier B.V. All rights reserved.

  14. Pain and microcrystalline arthritis

    R. Ramonda

    2014-06-01

    Full Text Available Microcrystals are responsible for some of the most common and complex arthropathies which are often accompanied by intense, severe pain and inflammatory reactions. The main pathogens are crystals of monosodium urate (MSU, responsible for the gout, calcium pyrophosphate (CPP, which deposits also in various clinical forms of arthopathies, and basic calcium phosphate associated with osteoarthritis. In this context, the microcrystal arthritis is characterized by multiple, acute attacks followed by chronic pain, disability, impaired quality of life, and increased mortality. Given their chronic nature, they represent an ever more urgent public health problem. MSU and CPP crystals are also able to activate nociceptors. The pain in mycrocrystalline arthritis (MCA is an expression of the inflammatory process. In the course of these diseases there is an abundant release of inflammatory molecules, including prostaglandins 2 and kinins. Interleukin-1 represents the most important cytokine released during the crystal-induced inflammatory process. Therefore, clinically, pain is the most important component of MCA, which lead to functional impairment and disability in a large proportion of the population. It is fundamental to diagnose these diseases as early as possible, and to this aim, to identify appropriate and specific targets for a timely therapeutic intervention.

  15. Surface thiolation of silicon for antifouling application.

    Zhang, Xiaoning; Gao, Pei; Hollimon, Valerie; Brodus, DaShan; Johnson, Arion; Hu, Hongmei

    2018-02-07

    Thiol groups grafted silicon surface was prepared as previously described. 1H,1H,2H,2H-perfluorodecanethiol (PFDT) molecules were then immobilized on such a surface through disulfide bonds formation. To investigate the contribution of PFDT coating to antifouling, the adhesion behaviors of Botryococcus braunii (B. braunii) and Escherichia coli (E. coli) were studied through biofouling assays in the laboratory. The representative microscope images suggest reduced B. braunii and E. coli accumulation densities on PFDT integrated silicon substrate. However, the antifouling performance of PFDT integrated silicon substrate decreased over time. By incubating the aged substrate in 10 mM TCEP·HCl solution for 1 h, the fouled PFDT coating could be removed as the disulfide bonds were cleaved, resulting in reduced absorption of algal cells and exposure of non-fouled silicon substrate surface. Our results indicate that the thiol-terminated substrate can be potentially useful for restoring the fouled surface, as well as maximizing the effective usage of the substrate.

  16. Magnetite nanoparticles embedded in biodegradable porous silicon

    Granitzer, P.; Rumpf, K.; Roca, A.G.; Morales, M.P.; Poelt, P.; Albu, M.

    2010-01-01

    Magnetite nanoparticles, which are coated with oleic acid in a hexane solution and exhibit an average diameter of 7.7 nm, were embedded in a porous silicon (PS) matrix by immersion under defined parameters (e.g. concentration, temperature, time). The porous silicon matrix is prepared by anodization of a highly n-doped silicon wafer in an aqueous HF-solution. Magnetic characterization of the samples has been performed by SQUID-magnetometry. The superparamagnetic behaviour of the magnetite nanoparticles is represented by temperature-dependent magnetization measurements. Zero field (ZFC)/field cooled (FC) experiments indicate magnetic interactions between the particles. For the infiltration into the PS-templates different concentrations of the magnetite nanoparticles are used and magnetization measurements are performed in respect with magnetic interactions between the particles. The achieved porous silicon/magnetite specimens are not only interesting due to their transition between superparamagnetic and ferromagnetic behaviour, and thus for magnetic applications but also because of the non-toxicity of both materials giving the opportunity to employ the system in medical applications as drug delivery or in medical diagnostics.

  17. Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere

    Hersam, Mark C.; Lipson, Albert L.; Bandyopadhyay, Sudeshna; Karmel, Hunter J; Bedzyk, Michael J

    2014-05-27

    A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.

  18. Sintering of nano crystalline α silicon carbide by doping with boron ...

    Sinterable nano silicon carbide powders of mean particle size (37 nm) were prepared by attrition milling and chemical processing of an acheson type alpha silicon carbide having mean particle size of 0.39 m (390 nm). Pressureless sintering of these powders was achieved by addition of boron carbide of 0.5 wt% together ...

  19. Sulfur-induced offsets in MC-ICP-MS silicon-isotope measurements

    van den Boorn, S.; Vroon, P.Z.; van Bergen, M.J.

    2009-01-01

    Sample preparation methods for MC-ICP-MS silicon-isotope measurements often involve a cation-exchange purification step. A previous study has argued that this would suffice for geological materials, as the occasional enrichment of anionic species would not compromise silicon-isotope analysis. Here

  20. Sulphur-induced offsets in MC-ICP-MS silicon-isotope measurements

    van den Boorn, S.; Vroon, P.Z.; van Bergen, M.J.

    2010-01-01

    Sample preparation methods for MC-ICP-MS silicon-isotope measurements often involve a cation-exchange purification step. A previous study has argued that this would suffice for geological materials, as the occasional enrichment of anionic species would not compromise silicon-isotope analysis. Here