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Sample records for mgo tunnel barriers

  1. Flexible MgO Barrier Magnetic Tunnel Junctions.

    Science.gov (United States)

    Loong, Li Ming; Lee, Wonho; Qiu, Xuepeng; Yang, Ping; Kawai, Hiroyo; Saeys, Mark; Ahn, Jong-Hyun; Yang, Hyunsoo

    2016-07-01

    Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process. This approach could be useful for flexible electronic systems that require high-performance memory components. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Reliability enhancement due to in-situ post-oxidation of sputtered MgO barrier in double MgO barrier magnetic tunnel junction

    Directory of Open Access Journals (Sweden)

    Chikako Yoshida

    2017-06-01

    Full Text Available We have investigated the effects of in-situ post-oxidation (PO of a sputtered MgO barrier in a double-MgO-barrier magnetic tunnel junction (MTJ and found that the short error rate was significantly reduced, the magnetoresistance (MR ratio was increased approximately 18%, and the endurance lifetime was extend. In addition, we found that the distribution of breakdown number (a measure of endurance exhibits trimodal characteristics, which indicates competition between extrinsic and intrinsic failures. This improvement in reliability might be related to the suppression of Fe and Co diffusion to the MgO barrier, as revealed by electron energy-loss spectroscopy (EELS analysis.

  3. Barrier breakdown mechanism in nano-scale perpendicular magnetic tunnel junctions with ultrathin MgO barrier

    Science.gov (United States)

    Lv, Hua; Leitao, Diana C.; Hou, Zhiwei; Freitas, Paulo P.; Cardoso, Susana; Kämpfe, Thomas; Müller, Johannes; Langer, Juergen; Wrona, Jerzy

    2018-05-01

    Recently, the perpendicular magnetic tunnel junctions (p-MTJs) arouse great interest because of its unique features in the application of spin-transfer-torque magnetoresistive random access memory (STT-MRAM), such as low switching current density, good thermal stability and high access speed. In this paper, we investigated current induced switching (CIS) in ultrathin MgO barrier p-MTJs with dimension down to 50 nm. We obtained a CIS perpendicular tunnel magnetoresistance (p-TMR) of 123.9% and 7.0 Ω.μm2 resistance area product (RA) with a critical switching density of 1.4×1010 A/m2 in a 300 nm diameter junction. We observe that the extrinsic breakdown mechanism dominates, since the resistance of our p-MTJs decreases gradually with the increasing current. From the statistical analysis of differently sized p-MTJs, we observe that the breakdown voltage (Vb) of 1.4 V is 2 times the switching voltage (Vs) of 0.7 V and the breakdown process exhibits two different breakdown states, unsteady and steady state. Using Simmons' model, we find that the steady state is related with the barrier height of the MgO layer. Furthermore, our study suggests a more efficient method to evaluate the MTJ stability under high bias rather than measuring Vb. In conclusion, we developed well performant p-MTJs for the use in STT-MRAM and demonstrate the mechanism and control of breakdown in nano-scale ultrathin MgO barrier p-MTJs.

  4. Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature

    International Nuclear Information System (INIS)

    Ohmori, Hideto; Hatori, Tomoya; Nakagawa, Shigeki

    2008-01-01

    MgO (100) textured films can be prepared by reactive facing targets sputtering at room temperature without postdeposition annealing process when they were deposited on (100) oriented Fe buffer layers. This method allows fabrication of perpendicular magnetic tunnel junction (p-MTJ) with MgO (100) tunneling barrier layer and rare-earth transition metal (RE-TM) alloy thin films as perpendicularly magnetized free and pinned layers. The 3-nm-thick MgO tunneling barrier layer in p-MTJ multilayer prepared on glass substrate revealed (100) crystalline orientation. Extraordinary Hall effect measurement clarified that the perpendicular magnetic components of 3-nm-thick Fe buffer layers on the two ends of MgO tunneling barrier layer were increased by exchange coupling with RE-TM alloy layers. The RA of 35 kΩ μm 2 and tunneling magnetoresistance ratio of 64% was observed in the multilayered p-MTJ element by current-in-plane-tunneling

  5. Fabrication of fully epitaxial magnetic tunnel junctions with a Co2MnSi thin film and a MgO tunnel barrier

    International Nuclear Information System (INIS)

    Kijima, H.; Ishikawa, T.; Marukame, T.; Matsuda, K.-I.; Uemura, T.; Yamamoto, M.

    2007-01-01

    Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with a Co-based full-Heusler alloy Co 2 MnSi (CMS) thin film having the ordered L2 1 structure as a lower electrode, a MgO tunnel barrier, and a Co 50 Fe 50 upper electrode. Reflection high-energy electron diffraction patterns observed in situ for each layer in the MTJ layer structure during fabrication clearly indicated that all layers of the CMS lower electrode, MgO tunnel barrier, and Co 50 Fe 50 upper electrode grew epitaxially. The microfabricated fully epitaxial CMS/MgO/Co 50 Fe 50 MTJs demonstrated relatively high tunnel magnetoresistance ratios of 90% at room temperature and 192% at 4.2 K

  6. Contact induced spin relaxation in graphene spin valves with Al2O3 and MgO tunnel barriers

    Directory of Open Access Journals (Sweden)

    Walid Amamou

    2016-03-01

    Full Text Available We investigate spin relaxation in graphene by systematically comparing the roles of spin absorption, other contact-induced effects (e.g., fringe fields, and bulk spin relaxation for graphene spin valves with MgO barriers, Al2O3 barriers, and transparent contacts. We obtain effective spin lifetimes by fitting the Hanle spin precession data with two models that include or exclude the effect of spin absorption. Results indicate that additional contact-induced spin relaxation other than spin absorption dominates the contact effect. For tunneling contacts, we find reasonable agreement between the two models with median discrepancy of ∼20% for MgO and ∼10% for Al2O3.

  7. Low frequency noise in asymmetric double barrier magnetic tunnel junctions with a top thin MgO layer

    International Nuclear Information System (INIS)

    Guo Hui-Qiang; Tang Wei-Yue; Liu Liang; Wei Jian; Li Da-Lai; Feng Jia-Feng; Han Xiu-Feng

    2015-01-01

    Low frequency noise has been investigated at room temperature for asymmetric double barrier magnetic tunnel junctions (DBMTJs), where the coupling between the top and middle CoFeB layers is antiferromagnetic with a 0.8-nm thin top MgO barrier of the CoFeB/MgO/CoFe/CoFeB/MgO/CoFeB DBMTJ. At enough large bias, 1/f noise dominates the voltage noise power spectra in the low frequency region, and is conventionally characterized by the Hooge parameter α mag . With increasing external field, the top and bottom ferromagnetic layers are aligned by the field, and then the middle free layer rotates from antiparallel state (antiferromagnetic coupling between top and middle ferromagnetic layers) to parallel state. In this rotation process α mag and magnetoresistance-sensitivity-product show a linear dependence, consistent with the fluctuation dissipation relation. With the magnetic field applied at different angles (θ) to the easy axis of the free layer, the linear dependence persists while the intercept of the linear fit satisfies a cos(θ) dependence, similar to that for the magnetoresistance, suggesting intrinsic relation between magnetic losses and magnetoresistance. (rapid communication)

  8. Superconducting tunnel junctions on MgB{sub 2} using MgO and CaF{sub 2} as a barrier

    Energy Technology Data Exchange (ETDEWEB)

    Sakoda, Masahito, E-mail: sakoda@cc.tuat.ac.jp [Department of Applied Physics, Tokyo University of Agriculture and Technology, 2-24-16, Koganei, Tokyo 184-8588 (Japan); Aibara, Masato; Mede, Kazuya; Kikuchi, Motoyuki; Naito, Michio [Department of Applied Physics, Tokyo University of Agriculture and Technology, 2-24-16, Koganei, Tokyo 184-8588 (Japan)

    2016-11-15

    Highlights: • We have revised the manuscript according to reviewer's comments. The details are in “Response to Reviewers”. • Superconducting junctions with MgO and CaF{sub 2} barrier were fabricated in order to improve the quality of junctions. • In SIN junctions with MgO barrier, clear superconducting gap was observed. (). • In SIS junctions with CaF2 barrier, Josephson current was observed over 30 K. (). • The compatibility of each barrier material at the upper and lower interfaces was clarified. (). - Abstract: We report the fabrication of superconducting tunnel junctions, both of superconductor–insulator-normal metal (SIN) and superconductor–insulator-superconductor (SIS), on MgB{sub 2} using MgO and CaF{sub 2} as a barrier. The SIN junctions fabricated using an MgO barrier showed excellent quasi-particle characteristics, including a large superconducting gap (Δ) of 2.5–3 meV and a low zero-bias conductance. We have also fabricated SIS junctions with an MgO barrier, but the quasi-particle characteristics of the SIS junctions are not as good as those of the SIN junctions, namely a reduced superconducting gap and a high zero-bias conductance. It appears that top MgB{sub 2} electrodes do not grow well on an MgO barrier, which is also suggested from in-situ RHEED observation. The SIN junctions fabricated using a CaF{sub 2} barrier showed less sharp quasi-particle characteristics than using an MgO barrier. However, the SIS junctions using a CaF{sub 2} barrier showed a fairly large I{sub c}R{sub N} value at 4.2 K over 1 mV and also exhibited finite Josephson current up to almost the film's T{sub c} (∼30 K). The RHEED observation revealed that top MgB{sub 2} electrodes grow well on a CaF{sub 2} barrier.

  9. Radio-frequency shot-noise measurement in a magnetic tunnel junction with a MgO barrier

    International Nuclear Information System (INIS)

    Rehman, Mushtaq; Park, Junghwan; Song, Woon; Chong, Yonuk; Lee, Yeonsub; Min, Byoungchul; Shin, Kyungho; Ryu, Sangwan; Khim, Zheong

    2010-01-01

    We measured the noise power of a magnetic tunnel junction in the frequency range of 710 ∼ 1200 MHz. A low-noise cryogenic HEMT amplifier was used to measure the small noise signal at a high frequency with wide bandwidth. The MgO-barrier tunnel junction showed large tunnel magnetoresistance ratio of 215% at low temperature, which indicates electronic transport through the tunnel barrier without any significant spin-flip scattering. In the bias-dependent noise measurement, however, the zero-bias shot noise was enhanced compared to the value expected from a perfect tunnel barrier or the value observed from a good Al-AlO x -Al tunnel junction. We assume that this enhanced noise comes from inelastic tunneling processes through the barrier, which may be related to the observed zero-bias anomaly in the differential resistance of the tunnel junctions. We present a simple phenomenological model for how the inelastic scattering process can enhance the zero-bias noise in a tunnel junction.

  10. Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Schebaum, Oliver; Drewello, Volker; Auge, Alexander; Reiss, Guenter; Muenzenberg, Markus; Schuhmann, Henning; Seibt, Michael; Thomas, Andy

    2011-01-01

    Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing temperatures were found to be 65% for alumina, 173% for magnesia, and 78% for the composite tunnel barriers. The similar tunnel magnetoresistance ratios of the tunnel junctions containing alumina provide evidence that coherent tunneling is suppressed by the alumina layer in the composite tunnel barrier. - Research highlights: → Transport properties of Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions. → Tunnel barrier consists of MgO, Al-Ox, or MgO/Al-Ox bilayer systems. → Limitation of TMR-ratio in composite barrier tunnel junctions to Al-Ox values. → Limitation indicates that Al-Ox layer is causing incoherent tunneling.

  11. MgO magnetic tunnel junctions of enduring F-type upon annealing

    International Nuclear Information System (INIS)

    Schleicher, F; Halisdemir, U; Urbain, E; Gallart, M; Boukari, S; Beaurepaire, E; Gilliot, P; Bowen, M; Lacour, D; Montaigne, F; Hehn, M

    2015-01-01

    The authors performed magnetotransport experiments to determine whether annealing alters the oxygen vacancy-mediated tunnelling potential landscape of the central portion of a MgO ultrathin film within sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions. Using the Î rel method reveals a temperature-dependent tunnelling barrier height for a non-annealed barrier that arises from single oxygen vacancies (F centres) and is qualitatively identical to that found for its partly and fully annealed counterparts. Thus these MTJs with F centres remain of F-type upon annealing. This explicitly confirms that the large tunnel-magnetoresistance (TMR) increase upon annealing results mainly from structural modifications of MgO and CoFeB and not from vacancy pairing within the barrier. Photoluminescence spectra performed on both annealed and non-annealed thin MgO films grown on CoFeB electrodes support this conclusion. This work should promote renewed scrutiny over the precise impact of annealing on tunnelling magnetotransport across MgO. (paper)

  12. Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions.

    Science.gov (United States)

    Loong, Li Ming; Qiu, Xuepeng; Neo, Zhi Peng; Deorani, Praveen; Wu, Yang; Bhatia, Charanjit S; Saeys, Mark; Yang, Hyunsoo

    2014-09-30

    While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic tunnel junctions (MTJs) can be significantly affected by the introduction of controllable mechanical strain, achieving an enhancement factor of ~2 in the experimental tunneling magnetoresistance (TMR) ratio. We further correlate this strain-enhanced TMR with coherent spin tunneling through the MgO barrier. Moreover, the strain-enhanced TMR is analyzed using non-equilibrium Green's function (NEGF) quantum transport calculations. Our results help elucidate the TMR mechanism at the atomic level and can provide a new way to enhance, as well as tune, the quantum properties in nanoscale materials and devices.

  13. Estimates for diffusion barriers and atomic potentials in MGO

    International Nuclear Information System (INIS)

    Skala, L.; Kenkre, V.M.

    1991-01-01

    In this paper, as part of a program of investigation of microwave sintering, self-consistent CNDO/2 calculations are presented for diffusion barriers and potentials for the motion of interstitial atoms and vacancies in MgO. Clusters of 30 atoms are used in the calculations. Activation energies, diffusion barriers, shape of the potentials and electron densities are obtained

  14. Fabrication of magnetic tunnel junctions with a single-crystalline LiF tunnel barrier

    Science.gov (United States)

    Krishna Narayananellore, Sai; Doko, Naoki; Matsuo, Norihiro; Saito, Hidekazu; Yuasa, Shinji

    2018-04-01

    We fabricated Fe/LiF/Fe magnetic tunnel junctions (MTJs) by molecular beam epitaxy on a MgO(001) substrate, where LiF is an insulating tunnel barrier with the same crystal structure as MgO (rock-salt type). Crystallographical studies such as transmission electron microscopy and nanobeam electron diffraction observations revealed that the LiF tunnel barrier is single-crystalline and has a LiF(001)[100] ∥ bottom Fe(001)[110] crystal orientation, which is constructed in the same manner as MgO(001) on Fe(001). Also, the in-plane lattice mismatch between the LiF tunnel barrier and the Fe bottom electrode was estimated to be small (about 0.5%). Despite such advantages for the tunnel barrier of the MTJ, the observed tunnel magnetoresistance (MR) ratio was low (˜6% at 20 K) and showed a significant decrease with increasing temperature (˜1% at room temperature). The results imply that indirect tunneling and/or thermally excited carriers in the LiF tunnel barrier, in which the current basically is not spin-polarized, play a major role in electrical transport in the MTJ.

  15. Tunnelling without barriers

    International Nuclear Information System (INIS)

    Lee, K.

    1987-01-01

    The evolution in flat and curved space-time of quantum fields in theories with relative flat potential and its consequences are considered. It is shown that bubble nucleation, a quantum mechanical tunnelling process, may occur in flat space-time, having a bounce solution, even if V(phi) has no barrier. It is shown that bubble nucleation can also occur in curved space-time even though there is no bounce solution in the standard formalism for the bubble nucleation rate in curved space-time. Additionally, bubbles can nucleate during the slow rolling period on the potential in flat and curved space-time, in this case also there is no bounce solution. It is known in the new inflationary scenario that energy density perturbations caused by quantum fluctuations of the scalar field can satisfy the presently observed bounds on density perturbations. Bubble nucleation during the slow rolling period also gives rise to density perturbations. For a model potential density perturbations by bubbles are calculated at the horizon reentering. By applying the bound from the almost isotropic microwave black body radiation on these density perturbations, a constraint on the model potential is obtained. Finally, some further implications on the galaxy formation and applications in more realistic potential are discussed

  16. Spin-polarized inelastic tunneling through insulating barriers.

    Science.gov (United States)

    Lu, Y; Tran, M; Jaffrès, H; Seneor, P; Deranlot, C; Petroff, F; George, J-M; Lépine, B; Ababou, S; Jézéquel, G

    2009-05-01

    Spin-conserving hopping transport through chains of localized states has been evidenced by taking benefit of the high degree of spin-polarization of CoFeB-MgO-CoFeB magnetic tunnel junctions. In particular, our data show that relatively thick MgO barriers doped with boron favor the activation of spin-conserving inelastic channels through a chain of three localized states and leading to reduced magnetoresistance effects. We propose an extension of the Glazman-Matveev theory to the case of ferromagnetic reservoirs to account for spin-polarized inelastic tunneling through nonmagnetic localized states embedded in an insulating barrier.

  17. Enhanced tunneling through nonstationary barriers

    International Nuclear Information System (INIS)

    Palomares-Baez, J. P.; Rodriguez-Lopez, J. L.; Ivlev, B.

    2007-01-01

    Quantum tunneling through a nonstationary barrier is studied analytically and by a direct numerical solution of Schroedinger equation. Both methods are in agreement and say that the main features of the phenomenon can be described in terms of classical trajectories which are solutions of Newton's equation in complex time. The probability of tunneling is governed by analytical properties of a time-dependent perturbation and the classical trajectory in the plane of complex time. Some preliminary numerical calculations of Euclidean resonance (an easy penetration through a classical nonstationary barrier due to an underbarrier interference) are presented

  18. Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO.

    Science.gov (United States)

    Schleicher, F; Halisdemir, U; Lacour, D; Gallart, M; Boukari, S; Schmerber, G; Davesne, V; Panissod, P; Halley, D; Majjad, H; Henry, Y; Leconte, B; Boulard, A; Spor, D; Beyer, N; Kieber, C; Sternitzky, E; Cregut, O; Ziegler, M; Montaigne, F; Beaurepaire, E; Gilliot, P; Hehn, M; Bowen, M

    2014-08-04

    Research on advanced materials such as multiferroic perovskites underscores promising applications, yet studies on these materials rarely address the impact of defects on the nominally expected materials property. Here, we revisit the comparatively simple oxide MgO as the model material system for spin-polarized solid-state tunnelling studies. We present a defect-mediated tunnelling potential landscape of localized states owing to explicitly identified defect species, against which we examine the bias and temperature dependence of magnetotransport. By mixing symmetry-resolved transport channels, a localized state may alter the effective barrier height for symmetry-resolved charge carriers, such that tunnelling magnetoresistance decreases most with increasing temperature when that state is addressed electrically. Thermal excitation promotes an occupancy switchover from the ground to the excited state of a defect, which impacts these magnetotransport characteristics. We thus resolve contradictions between experiment and theory in this otherwise canonical spintronics system, and propose a new perspective on defects in dielectrics.

  19. Josephson phase qubit circuit for the evaluation of advanced tunnel barrier materials

    Energy Technology Data Exchange (ETDEWEB)

    Kline, Jeffrey S; Oh, Seongshik; Pappas, David P [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Wang Haohua; Martinis, John M [Department of Physics, University of California, Santa Barbara, CA 93106 (United States)], E-mail: klinej@nist.gov

    2009-01-15

    We have found that crystalline Josephson junctions have problems with the control of critical current density that decrease the circuit yield. We present a superconducting quantum bit circuit designed to accommodate a factor of five variation in critical current density from one fabrication run to the next. The new design enables the evaluation of advanced tunnel barrier materials for superconducting quantum bits. Using this circuit design, we compare the performance of Josephson phase qubits fabricated with MgO and Al{sub 2}O{sub 3} advanced crystalline tunnel barriers to AlO{sub x} amorphous tunnel barrier qubits.

  20. Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier

    Science.gov (United States)

    Chien, Diana; Li, Xiang; Wong, Kin; Zurbuchen, Mark A.; Robbennolt, Shauna; Yu, Guoqiang; Tolbert, Sarah; Kioussis, Nicholas; Khalili Amiri, Pedram; Wang, Kang L.; Chang, Jane P.

    2016-03-01

    Compared with current-controlled magnetization switching in a perpendicular magnetic tunnel junction (MTJ), electric field- or voltage-induced magnetization switching reduces the writing energy of the memory cell, which also results in increased memory density. In this work, an ultra-thin PZT film with high dielectric constant was integrated into the tunneling oxide layer to enhance the voltage-controlled magnetic anisotropy (VCMA) effect. The growth of MTJ stacks with an MgO/PZT/MgO tunnel barrier was performed using a combination of sputtering and atomic layer deposition techniques. The fabricated MTJs with the MgO/PZT/MgO barrier demonstrate a VCMA coefficient, which is ˜40% higher (19.8 ± 1.3 fJ/V m) than the control sample MTJs with an MgO barrier (14.3 ± 2.7 fJ/V m). The MTJs with the MgO/PZT/MgO barrier also possess a sizeable tunneling magnetoresistance (TMR) of more than 50% at room temperature, comparable to the control MTJs with an MgO barrier. The TMR and enhanced VCMA effect demonstrated simultaneously in this work make the MgO/PZT/MgO barrier-based MTJs potential candidates for future voltage-controlled, ultralow-power, and high-density magnetic random access memory devices.

  1. Interlayer exchange coupling, dipolar coupling and magnetoresistance in Fe/MgO/Fe trilayers with a subnanometer MgO barrier

    Energy Technology Data Exchange (ETDEWEB)

    Kozioł-Rachwał, A. [AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. Mickiewicza 30, 30-059 Kraków (Poland); National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); Skowroński, W.; Frankowski, M. [AGH University of Science and Technology, Department of Electronics, al. Mickiewicza 30, 30-059 Kraków (Poland); Chęciński, J. [AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. Mickiewicza 30, 30-059 Kraków (Poland); AGH University of Science and Technology, Department of Electronics, al. Mickiewicza 30, 30-059 Kraków (Poland); Ziętek, S.; Rzeszut, P. [AGH University of Science and Technology, Department of Electronics, al. Mickiewicza 30, 30-059 Kraków (Poland); Ślęzak, M.; Matlak, K.; Ślęzak, T. [AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. Mickiewicza 30, 30-059 Kraków (Poland); Stobiecki, T. [AGH University of Science and Technology, Department of Electronics, al. Mickiewicza 30, 30-059 Kraków (Poland); Korecki, J. [AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. Mickiewicza 30, 30-059 Kraków (Poland); Jerzy Haber Institute of Catalysis and Surface Chemistry, Polish Academy of Sciences, ul. Niezapominajek 8, 30-239 Kraków (Poland)

    2017-02-15

    Fe/MgO/Fe trilayers with a subnanometer MgO tunnel barrier were grown by molecular beam epitaxy. Longitudinal magnetooptic Kerr effect measurements confirmed the existence of the antiferromagnetic interlayer exchange coupling (IEC) between the Fe layers for 2 ÅMgO}<6 Å. The coupling was enhanced for the trilayer grown on a homoepitaxial MgO buffer layer, and its IEC constant was estimated to be −3.3 erg/cm{sup 2} at a MgO thickness of 2.7 Å. After magnetic characterization, the sample was patterned into circular-shaped pillars with diameters ranging from 200 nm to 520 nm. We showed that the dipolar coupling that appeared after the nanofabrication process modified the effective coupling between layers, and we determined dependence of the dipolar coupling on the pillar diameter. Finally, magnetoresistance (MR) was measured as a function of MgO thickness (d{sub MgO}), and a non-zero MR was found for the MgO as thin as 3.4 Å. Extrapolation of the MR (d{sub MgO}) dependence to MR=0 allowed us to determine the length of the pinholes in our sample, which was estimated to be (3.2±0.5) Å. - Highlights: • Strong antiferromagnetic (AFM) interlayer exchange coupling (IEC) between Fe layers in Fe/MgO/Fe. • After nanofabrication the effective AFM IEC is enhanced due to the dipolar coupling. • The dipolar coupling that appeared after the nanofabrication process modified the effective coupling between layers. • Non-zero magnetoresistance values registered for the Fe/MgO/Fe trilayers with the MgO spacers as thin as 3.4 Å.

  2. Relativistic tunneling through two successive barriers

    International Nuclear Information System (INIS)

    Lunardi, Jose T.; Manzoni, Luiz A.

    2007-01-01

    We study the relativistic quantum mechanical problem of a Dirac particle tunneling through two successive electrostatic barriers. Our aim is to study the emergence of the so-called generalized Hartman effect, an effect observed in the context of nonrelativistic tunneling as well as in its counterparts and which is often associated with the possibility of superluminal velocities in the tunneling process. We discuss the behavior of both the phase (or group) tunneling time and the dwell time, and show that in the limit of opaque barriers the relativistic theory also allows the emergence of the generalized Hartman effect. We compare our results with the nonrelativistic ones and discuss their interpretation

  3. Tunnel junctions with multiferroic barriers

    Science.gov (United States)

    Gajek, Martin; Bibes, Manuel; Fusil, Stéphane; Bouzehouane, Karim; Fontcuberta, Josep; Barthélémy, Agnès; Fert, Albert

    2007-04-01

    Multiferroics are singular materials that can exhibit simultaneously electric and magnetic orders. Some are ferroelectric and ferromagnetic and provide the opportunity to encode information in electric polarization and magnetization to obtain four logic states. However, such materials are rare and schemes allowing a simple electrical readout of these states have not been demonstrated in the same device. Here, we show that films of La0.1Bi0.9MnO3 (LBMO) are ferromagnetic and ferroelectric, and retain both ferroic properties down to a thickness of 2nm. We have integrated such ultrathin multiferroic films as barriers in spin-filter-type tunnel junctions that exploit the magnetic and ferroelectric degrees of freedom of LBMO. Whereas ferromagnetism permits read operations reminiscent of magnetic random access memories (MRAM), the electrical switching evokes a ferroelectric RAM write operation. Significantly, our device does not require the destructive ferroelectric readout, and therefore represents an advance over the original four-state memory concept based on multiferroics.

  4. Electron tunneling across a tunable potential barrier

    International Nuclear Information System (INIS)

    Mangin, A; Anthore, A; Rocca, M L Della; Boulat, E; Lafarge, P

    2009-01-01

    We present an experiment where the elementary quantum electron tunneling process should be affected by an independent gate voltage parameter. We have realized nanotransistors where the source and drain electrodes are created by electromigration inducing a nanometer sized gap acting as a tunnel barrier. The barrier potential shape is in first approximation considered trapezoidal. The application of a voltage to the gate electrode close to the barrier region can in principle affect the barrier shape. Simulations of the source drain tunnel current as a function of the gate voltage predict modulations as large as one hundred percent. The difficulty of observing the predicted behaviour in our samples might be due to the peculiar geometry of the realized tunnel junction.

  5. Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction

    Science.gov (United States)

    Lee, Du-Yeong; Hong, Song-Hwa; Lee, Seung-Eun; Park, Jea-Gun

    2016-12-01

    It was found that in double MgO based perpendicular magnetic tunneling junction spin-valves ex-situ annealed at 400 °C, the tunneling magnetoresistance ratio was extremely sensitive to the material and thickness of the nanoscale spacer: it peaked at a specific thickness (0.40~0.53 nm), and the TMR ratio for W spacers (~134%) was higher than that for Ta spacers (~98%). This dependency on the spacer material and thickness was associated with the (100) body-centered-cubic crystallinity of the MgO layers: the strain enhanced diffusion length in the MgO layers of W atoms (~1.40 nm) was much shorter than that of Ta atoms (~2.85 nm) and the shorter diffusion length led to the MgO layers having better (100) body-centered-cubic crystallinity.

  6. Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOX barriers

    Science.gov (United States)

    Newhouse-Illige, T.; Xu, Y. H.; Liu, Y. H.; Huang, S.; Kato, H.; Bi, C.; Xu, M.; LeRoy, B. J.; Wang, W. G.

    2018-02-01

    Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here, we investigate the quality of the GdOX barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlOX and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence including sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.

  7. The role of Mg interface layer in MgO magnetic tunnel junctions with CoFe and CoFeB electrodes

    Directory of Open Access Journals (Sweden)

    Hyunsoo Yang

    2012-03-01

    Full Text Available The tunneling spin polarization (TSP is directly measured from reactively sputter deposited crystalline MgO tunnel barriers with various CoFe(B compositions using superconducting tunneling spectroscopy. We find that the Mg interface layer thickness dependence of TSP values for CoFeB/Mg/MgO junctions is substantially different from those for CoFe/Mg/MgO especially in the pre-annealed samples due to the formation of boron oxide at the CoFeB/MgO interface. Annealing depletes boron at the interface thus requiring a finite Mg interface layer to prevent CoFeOx formation at the CoFeB/MgO interface so that the TSP values can be optimized by controlling Mg thickness.

  8. Tunnelling through a Gaussian random barrier

    International Nuclear Information System (INIS)

    Bezak, Viktor

    2008-01-01

    A thorough analysis of the tunnelling of electrons through a laterally inhomogeneous rectangular barrier is presented. The barrier height is defined as a statistically homogeneous Gaussian random function. In order to simplify calculations, we assume that the electron energy is low enough in comparison with the mean value of the barrier height. The randomness of the barrier height is defined vertically by a constant variance and horizontally by a finite correlation length. We present detailed calculations of the angular probability density for the tunnelled electrons (i.e. for the scattering forwards). The tunnelling manifests a remarkably diffusive character if the wavelength of the electrons is comparable with the correlation length of the barrier

  9. Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers

    Energy Technology Data Exchange (ETDEWEB)

    Piquemal-Banci, M.; Galceran, R.; Bouzehouane, K.; Anane, A.; Petroff, F.; Fert, A.; Dlubak, B.; Seneor, P. [Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, Palaiseau 91767 (France); Caneva, S.; Martin, M.-B.; Weatherup, R. S.; Kidambi, P. R.; Robertson, J.; Hofmann, S. [Department of Engineering, University of Cambridge, Cambridge CB21PZ (United Kingdom); Xavier, S. [Thales Research and Technology, 1 avenue Augustin Fresnel, Palaiseau 91767 (France)

    2016-03-07

    We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into Co/h-BN/Fe magnetic tunnel junctions (MTJs). The h-BN monolayer is directly grown by chemical vapor deposition on Fe. The Conductive Tip Atomic Force Microscopy (CT-AFM) measurements reveal the homogeneity of the tunnel behavior of our h-BN layers. As expected for tunneling, the resistance depends exponentially on the number of h-BN layers. The h-BN monolayer properties are also characterized through integration into complete MTJ devices. A Tunnel Magnetoresistance of up to 6% is observed for a MTJ based on a single atomically thin h-BN layer.

  10. Homoepitaxial graphene tunnel barriers for spin transport

    Directory of Open Access Journals (Sweden)

    Adam L. Friedman

    2016-05-01

    Full Text Available Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

  11. Homoepitaxial graphene tunnel barriers for spin transport

    Science.gov (United States)

    Friedman, Adam L.; van't Erve, Olaf M. J.; Robinson, Jeremy T.; Whitener, Keith E.; Jonker, Berend T.

    2016-05-01

    Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

  12. Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Useinov, N.Kh.; Petukhov, D.A.; Tagirov, L.R.

    2015-01-01

    The spin-polarized tunnel conductance and tunnel magnetoresistance (TMR) through a planar asymmetric double-barrier magnetic tunnel junction (DBMTJ) have been calculated using quasi-classical model. In DBMTJ nanostructure the magnetization of middle ferromagnetic metal layer can be aligned parallel or antiparallel with respect to the fixed magnetizations of the top and bottom ferromagnetic electrodes. The transmission coefficients of an electron to pass through the barriers have been calculated in terms of quantum mechanics. The dependencies of tunnel conductance and TMR on the applied voltage have been calculated in case of non-resonant transmission. Estimated in the framework of our model, the difference between the spin-channels conductances at low voltages was found relatively large. This gives rise to very high magnitude of TMR. - Highlights: • The spin-polarized conductance through the junction is calculated. • Dependencies of the tunnel conductance vs applied bias are shown. • Bias voltage dependence of tunnel magnetoresistance for the structure is shown

  13. Phonon tunneling through a double barrier system

    International Nuclear Information System (INIS)

    Villegas, Diosdado; León-Pérez, Fernando de; Pérez-Álvarez, R.; Arriaga, J.

    2015-01-01

    The tunneling of optical and acoustic phonons at normal incidence on a double-barrier is studied in this paper. Transmission coefficients and resonance conditions are derived theoretically under the assumption that the long-wavelength approximation is valid. It is shown that the behavior of the transmission coefficients for the symmetric double barrier has a Lorentzian form close to resonant frequencies and that Breit–Wigner's formula have a general validity in one-dimensional phonon tunneling. Authors also study the so-called generalized Hartman effect in the tunneling of long-wavelength phonons and show that this effect is a numerical artifact resulting from taking the opaque limit before exploring the variation with a finite barrier width. This study could be useful for the design of acoustic devices

  14. Phonon tunneling through a double barrier system

    Energy Technology Data Exchange (ETDEWEB)

    Villegas, Diosdado [Departamento de Física, Universidad Central “Marta Abreu” de Las Villas, CP 54830, Santa Clara, Villa Clara (Cuba); Instituto de Física, Universidad Autónoma de Puebla, 18 Sur y San Claudio, Edif. 110A, Ciudad Universitaria, 72570 Puebla (Mexico); León-Pérez, Fernando de [Centro Universitario de la Defensa de Zaragoza, Ctra. de Huesca s/n, E-50090 Zaragoza (Spain); Pérez-Álvarez, R. [Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca (Mexico); Arriaga, J., E-mail: arriaga@ifuap.buap.mx [Instituto de Física, Universidad Autónoma de Puebla, 18 Sur y San Claudio, Edif. 110A, Ciudad Universitaria, 72570 Puebla (Mexico)

    2015-04-15

    The tunneling of optical and acoustic phonons at normal incidence on a double-barrier is studied in this paper. Transmission coefficients and resonance conditions are derived theoretically under the assumption that the long-wavelength approximation is valid. It is shown that the behavior of the transmission coefficients for the symmetric double barrier has a Lorentzian form close to resonant frequencies and that Breit–Wigner's formula have a general validity in one-dimensional phonon tunneling. Authors also study the so-called generalized Hartman effect in the tunneling of long-wavelength phonons and show that this effect is a numerical artifact resulting from taking the opaque limit before exploring the variation with a finite barrier width. This study could be useful for the design of acoustic devices.

  15. Tunnel superpenetrability of potential barriers

    International Nuclear Information System (INIS)

    Zakhariev, B N.

    1982-01-01

    The transmission of two particles through the same barrier is considered. The limiting cases are compared when the particles are joined together in a single particle with double mass-energy and potential and when they pass the barrier independently. As an intermediate case a pair of particles bound in a quasideuteron of a finite size is considered. It is shown that long-range collective correlations of particles (of the superfluidity type and others) simplify very much for them passing through high potential barriers. This happens due to the transfer of the additional energy from the particles outside the barriers to those inside it

  16. Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions

    OpenAIRE

    Loong, Li Ming; Qiu, Xuepeng; Neo, Zhi Peng; Deorani, Praveen; Wu, Yang; Bhatia, Charanjit S.; Saeys, Mark; Yang, Hyunsoo

    2014-01-01

    While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic tunnel junctions (MTJs) can be significantly affected by the introduction of controllable mechanical...

  17. Resonant tunneling via spin-polarized barrier states in a magnetic tunnel junction

    NARCIS (Netherlands)

    Jansen, R.; Lodder, J.C.

    2000-01-01

    Resonant tunneling through states in the barrier of a magnetic tunnel junction has been analyzed theoretically for the case of a spin-polarized density of barrier states. It is shown that for highly spin-polarized barrier states, the magnetoresistance due to resonant tunneling is enhanced compared

  18. Large magnetocurrents in double-barrier tunneling transistors

    International Nuclear Information System (INIS)

    Lee, J.H.; Jun, K.-I.; Shin, K.-H.; Park, S.Y.; Hong, J.K.; Rhie, K.; Lee, B.C.

    2005-01-01

    Magnetic tunneling transistors (MTT) with double tunneling barriers are fabricated. The structure of the transistor is AFM/FM/I/FM/I/FM/AFM, and ferromagnetic layers serve as the emitter, base and collector. This double-barrier tunneling transistor (DBTT) has an advantage of controlling the potential between the base and collector, compared to the Schottky-barrier-based base and collector of MTT. We found that the collector current density of DBTT is at least 10 3 times larger than that of conventional MTT, since tunneling through AlO x barrier provides much larger current density than that through Schottky barrier

  19. Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 °C.

    Science.gov (United States)

    Takemura, Yasutaka; Lee, Du-Yeong; Lee, Seung-Eun; Park, Jea-Gun

    2016-12-02

    For the double MgO based perpendicular magnetic tunneling junction (p-MTJ) spin-valves with a top Co 2 Fe 6 B 2 free layer ex situ annealed at 400 °C, the tunneling-magnetoresistance ratio (TMR) strongly depended on the platinum (Pt) seed layer thickness (t Pt ): it peaked (∼134%) at a specific t Pt (3.3 nm). The TMR ratio was initially and slightly increased from 113%-134% by the enhancement of the magnetic moment of the Co 2 Fe 6 B 2 pinned layer when t Pt increased from 2.0-3.3 nm, and then rapidly decreased from 134%-38.6% by the degrading face-centered-cubic crystallinity of the MgO tunneling barrier when t Pt increased from 3.3-14.3 nm.

  20. Resonant tunneling through double-barrier structures on graphene

    International Nuclear Information System (INIS)

    Deng Wei-Yin; Zhu Rui; Deng Wen-Ji; Xiao Yun-Chang

    2014-01-01

    Quantum resonant tunneling behaviors of double-barrier structures on graphene are investigated under the tight-binding approximation. The Klein tunneling and resonant tunneling are demonstrated for the quasiparticles with energy close to the Dirac points. The Klein tunneling vanishes by increasing the height of the potential barriers to more than 300 meV. The Dirac transport properties continuously change to the Schrödinger ones. It is found that the peaks of resonant tunneling approximate to the eigen-levels of graphene nanoribbons under appropriate boundary conditions. A comparison between the zigzag- and armchair-edge barriers is given. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  1. On the conductive properties of MgO films grown on ultrathin hexagonal close-packed Co(0001) layer

    International Nuclear Information System (INIS)

    Gladczuk, L.; Aleszkiewicz, M.

    2013-01-01

    Here we present a scanning tunneling microscopy study of electrical conductivity of (110)-oriented MgO ultrathin films grown on hexagonal close-packed Co(0001) surface by molecular beam epitaxy, being a good candidate for tunneling barrier for future-generation spintronic devices. Three-dimensional growth of the tunneling barrier, expected for compressive strains emerging at the Co/MgO interface, is demonstrated by reflection high-energy electron diffraction and atomic force microscopy. The 5 eV height of the full barrier of MgO is reached at a layer thickness of 4 nm. Thinner MgO layers exhibit randomly distributed spots of the high conductance on the tunneling current map. The current–voltage curves indicate the existence of vacancies in MgO crystal lattice, lowering the resistivity of the tunneling barrier. - Highlights: • Conductivity of MgO barrier in MgO/hexagonal close-packed-Co bilayer • Conductivity strongly varies with MgO thickness • MgO barrier exhibits randomly distributed spots of particularly high conductance • Tunneling current–voltage curves indicate the existence of vacancies in MgO lattice

  2. Single-electron tunneling in double-barrier nanostructures

    International Nuclear Information System (INIS)

    Goldman, V.J.; Su, B.; Cunningham, J.E.

    1992-01-01

    In this paper, the authors review experimental study of charge transport in nanometer double-barrier resonant tunneling devices. Heterostructure material is asymmetric: one barrier is substantially less transparent than the other. Resonant tunneling through size-quantized well states and single-electron charging of the well are thus largely separated in the two bias polarities. When the emitter barrier is more transparent than the collector barrier, electrons accumulate in the well; incremental electron occupation of the well is accompanied by Coulomb blockade leading to sharp steps of the tunneling current. When the emitter barrier is less transparent, the current reflects resonant tunneling of just one electron at a time through size-quantized well states; the current peaks and/or steps (depending on experimental parameters) appear in current-voltage characteristics. Magnetic field and temperature effects are also reviewed. Good agreement is achieved in comparison of many features of experimental data with simple theoretical models

  3. Differential conductance measurements of low-resistance CoFeB/MgO/CoFeB magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Nishioka, S.; Hamada, Y.V.; Matsumoto, R.; Mizuguchi, M.; Shiraishi, M.; Fukushima, A.; Kubota, H.; Nagahama, T.; Yuasa, S.; Maehara, H.; Nagamine, Y.; Tsunekawa, K.; Djayaprawira, D.D.; Watanabe, N.; Suzuki, Y.

    2007-01-01

    We measured differential conductance spectra of magnetic tunnel junctions (MTJs) with thin MgO barrier and low-resistance area product. The spectra of MTJs with MgO barrier thicker than 1.05 nm were essentially the same except for slight decrease of contributions from low-energy excitations, such as magnons. The spectra of MTJ with 1.01 nm MgO barrier were thoroughly different from the MTJs with thicker barrier. The result reveals that an MTJ with very thin MgO barrier thickness has different conduction characteristics from those with thicker MgO barriers

  4. Tunneling rates in electron transport through double-barrier molecular junctions in a scanning tunneling microscope.

    Science.gov (United States)

    Nazin, G V; Wu, S W; Ho, W

    2005-06-21

    The scanning tunneling microscope enables atomic-scale measurements of electron transport through individual molecules. Copper phthalocyanine and magnesium porphine molecules adsorbed on a thin oxide film grown on the NiAl(110) surface were probed. The single-molecule junctions contained two tunneling barriers, vacuum gap, and oxide film. Differential conductance spectroscopy shows that electron transport occurs via vibronic states of the molecules. The intensity of spectral peaks corresponding to the individual vibronic states depends on the relative electron tunneling rates through the two barriers of the junction, as found by varying the vacuum gap tunneling rate by changing the height of the scanning tunneling microscope tip above the molecule. A simple, sequential tunneling model explains the observed trends.

  5. Tunneling time through a barrier using the tempus operator

    Energy Technology Data Exchange (ETDEWEB)

    Kobe, Donald H.; Aguilera-Navarro, Valdir C. [North Texas Univ., Denton, TX (United States). Dept. of Physics

    1996-11-01

    The time a particle spends in a classically forbidden region of a potential barrier is expressed as an expectation value of the time operator in that region. Classically, time is canonically conjugate to the energy and is equal to the time a conservative system. The tunneling time is calculated by this approach for a rectangular barrier, which gives a complex time. The imaginary part of the time is non negative, so it is interpreted as a tunneling time. The real part gives a negative value for some values of the parameters, and is therefore rejected because it violates causality. This tunneling time is compared with other tunneling times that have been suggested by also calculating them for the rectangular barrier. 58 refs., 7 figs.

  6. Tunneling time through a barrier using the tempus operator

    International Nuclear Information System (INIS)

    Kobe, Donald H.; Aguilera-Navarro, Valdir C.

    1996-11-01

    The time a particle spends in a classically forbidden region of a potential barrier is expressed as an expectation value of the time operator in that region. Classically, time is canonically conjugate to the energy and is equal to the time a conservative system. The tunneling time is calculated by this approach for a rectangular barrier, which gives a complex time. The imaginary part of the time is non negative, so it is interpreted as a tunneling time. The real part gives a negative value for some values of the parameters, and is therefore rejected because it violates causality. This tunneling time is compared with other tunneling times that have been suggested by also calculating them for the rectangular barrier. 58 refs., 7 figs

  7. Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

    KAUST Repository

    Useinov, Arthur

    2012-06-01

    In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.

  8. Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

    KAUST Repository

    Useinov, Arthur; Gooneratne, Chinthaka Pasan; Kosel, Jü rgen

    2012-01-01

    In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.

  9. Homoepitaxial graphene tunnel barriers for spin transport (Presentation Recording)

    Science.gov (United States)

    Friedman, Adam L.

    2015-09-01

    Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions (magnetic field, temperature, etc.) usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate homoepitaxial tunnel barrier devices in which graphene serves as both the tunnel barrier and the high mobility transport channel. Beginning with multilayer graphene, we fluorinate or hydrogenate the top layer to decouple it from the bottom layer, so that it serves as a single monolayer tunnel barrier for both charge and spin injection into the lower graphene transport channel. We demonstrate successful tunneling by measuring non-linear IV curves, and a weakly temperature dependent zero bias resistance. We perform lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the non-local Hanle effect to be commensurate with previous studies (~200 ps). However, we also demonstrate the highest spin polarization efficiencies (~45%) yet measured in graphene-based spin devices [1]. [1] A.L. Friedman, et al., Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport, Nat. Comm. 5, 3161 (2014).

  10. Tunnelling through two successive barriers and the Hartman (superluminal) effect

    International Nuclear Information System (INIS)

    Olkhovsky, V.; Recami, E.; Salesi, G.; Bergamo Univ., Bergamo

    2000-03-01

    The paper studies the phenomenon of one-dimensional non-resonant tunnelling through two successive potential barriers, separated by an intermediate free region R, by analyzing the relevant solutions to the Schroedinger equation. The total traversal time does not depend not only on the barrier widths (the so called Hartman effect), but also on the R width: so the effective velocity in the region R, between the two barriers, can be regarded as infinite. This agrees with the results known from the corresponding waveguide experiments, which simulated the tunnelling experiment herein considered due to the formal identity between the Schroedinger and the Helmholtz equation

  11. Instantaneous Tunneling Flight Time for Wavepacket Transmission through Asymmetric Barriers.

    Science.gov (United States)

    Petersen, Jakob; Pollak, Eli

    2018-04-12

    The time it takes a particle to tunnel through the asymmetric Eckart barrier potential is investigated using Gaussian wavepackets, where the barrier serves as a model for the potential along a chemical reaction coordinate. We have previously shown that the, in principle experimentally measurable, tunneling flight time, which determines the time taken by the transmitted particle to traverse the barrier, vanishes for symmetric potentials like the Eckart and square barrier [ Petersen , J. ; Pollak , E. J. Phys. Chem. Lett. 2017 , 9 , 4017 ]. Here we show that the same result is obtained for the asymmetric Eckart barrier potential, and therefore, the zero tunneling flight time seems to be a general result for one-dimensional time-independent potentials. The wavepacket dynamics is simulated using both an exact quantum mechanical method and a classical Wigner prescription. The excellent agreement between the two methods shows that quantum coherences are not important in pure one-dimensional tunneling and reinforces the conclusion that the tunneling flight time vanishes.

  12. Optimization of a tunneling barrier in magnetic tunneling junction by tilted-plasma oxidation

    International Nuclear Information System (INIS)

    Nam, C.H.; Shim, Heejae; Kim, K.S.; Cho, B.K.

    2004-01-01

    Oxidation of an AlO x insulating barrier in a magnetic tunneling junction (MTJ) was carried out by a tilted-plasma oxidation method. It was found that the tilted-plasma oxidation induced a gradual change in the extent of oxidation of an insulating layer, which consequently led to a gradual change in the tunneling magnetoresistance (TMR) and specific junction resistance (RA) of the MTJ. We found a linear relation in the TMR versus RA curve with positive and negative slopes for less- and overoxidized junctions, respectively, and a parabolic relation for optimally oxidized junctions. The crossover in the TMR versus RA curves provides an effective and useful way to optimize (and monitor) the oxidation condition of a tunneling barrier in MTJs especially of a tunneling barrier less than 10 A thick. The tunneling junctions were also investigated after thermal annealing at various temperatures. The observations after thermal annealing were found to be consistent with transmission electrons microscopy images and a scenario of the partial formation of an additional ultrathin tunneling barrier at the top surface of the bottom magnetic layer

  13. Nonlinear transport theory in the metal with tunnel barrier

    Science.gov (United States)

    Zubov, E. E.

    2018-02-01

    Within the framework of the scattering matrix formalism, the nonlinear Kubo theory for electron transport in the metal with a tunnel barrier has been considered. A general expression for the mean electrical current was obtained. It significantly simplifies the calculation of nonlinear contributions to the conductivity of various hybrid structures. In the model of the tunnel Hamiltonian, all linear and nonlinear contributions to a mean electrical current are evaluated. The linear approximation agrees with results of other theories. For effective barrier transmission ?, the ballistic transport is realised with a value of the Landauer conductivity equal to ?.

  14. Tunneling rates in electron transport through double-barrier molecular junctions in a scanning tunneling microscope

    OpenAIRE

    Nazin, G. V.; Wu, S. W.; Ho, W.

    2005-01-01

    The scanning tunneling microscope enables atomic-scale measurements of electron transport through individual molecules. Copper phthalocyanine and magnesium porphine molecules adsorbed on a thin oxide film grown on the NiAl(110) surface were probed. The single-molecule junctions contained two tunneling barriers, vacuum gap, and oxide film. Differential conductance spectroscopy shows that electron transport occurs via vibronic states of the molecules. The intensity of spectral peaks correspondi...

  15. Fabrication of Mg-X-O (X = Fe, Co, Ni, Cr, Mn, Ti, V, and Zn) barriers for magnetic tunnel junctions

    Science.gov (United States)

    Yakushiji, K.; Kitagawa, E.; Ochiai, T.; Kubota, H.; Shimomura, N.; Ito, J.; Yoda, H.; Yuasa, S.

    2018-05-01

    We fabricated magnetic tunnel junctions with a 3d-transition material(X)-doped MgO (Mg-X-O) barrier, and evaluated the effect of the doping on magnetoresistance (MR) and microstructure. Among the variations of X (X = Fe, Co, Ni, Cr, Mn, Ti, V, and Zn), X = Fe and Mn showed a high MR ratio of more than 100%, even at a low resistance-area product of 3 Ωμm2. The microstructure analysis revealed that (001) textured orientation formed for X = Fe and Mn despite substantial doping (about 10 at%). The elemental mappings indicated that Fe atoms in the Mg-Fe-O barrier were segregated at the interfaces, while Mn atoms were evenly involved in the Mg-Mn-O barrier. This suggests that MgO has high adaptability for Fe and Mn dopants in terms of high MR ratio.

  16. Locally addressable tunnel barriers within a carbon nanotube

    DEFF Research Database (Denmark)

    Biercuk, M.; Mason, N.; Chow, J.

    2003-01-01

    We report the realization and characterization of independently controllable tunnel barriers within a carbon nanotube. The nanotubes are mechanically bent or kinked using an atomic force microscope, and top gates are subsequently placed near each kink. Transport measurements indicate that the kin...

  17. Apparent Barrier Height in Scanning Tunneling Microscopy Revisited

    DEFF Research Database (Denmark)

    Olesen, L.; Brandbyge, Mads; Sørensen, Mads Reinholdt

    1996-01-01

    The apparent barrier height phi(ap), that is, the rate of change of the logarithm of the conductance with tip-sample separation in a scanning tunneling microscope (STM), has been measured for Ni, Pt, and Au single crystal surfaces. The results show that phi(ap) is constant until point contact...... is reached rather than decreasing at small tunneling gap distances, as previously reported. The findings for phi(ap) can be accounted for theoretically by including the relaxations of the tip-surface junction in an STM due to the strong adhesive forces at close proximity. These relaxation effects are shown...

  18. Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

    KAUST Repository

    Useinov, A. N.

    2011-08-24

    We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

  19. Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

    KAUST Repository

    Useinov, A. N.; Kosel, Jü rgen; Useinov, N. Kh.; Tagirov, L. R.

    2011-01-01

    We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

  20. Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers.

    Science.gov (United States)

    Wang, Jing; Huang, Qikun; Shi, Peng; Zhang, Kun; Tian, Yufeng; Yan, Shishen; Chen, Yanxue; Liu, Guolei; Kang, Shishou; Mei, Liangmo

    2017-10-26

    The development of multifunctional spintronic devices requires simultaneous control of multiple degrees of freedom of electrons, such as charge, spin and orbit, and especially a new physical functionality can be realized by combining two or more different physical mechanisms in one specific device. Here, we report the realization of novel tunneling rectification magnetoresistance (TRMR), where the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated in Co/CoO-ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers. Moreover, by simultaneously applying direct current and alternating current to the devices, the TRMR has been remarkably tuned in the range from -300% to 2200% at low temperature. This proof-of-concept investigation provides an unexplored avenue towards electrical and magnetic control of charge and spin, which may apply to other heterojunctions to give rise to more fascinating emergent functionalities for future spintronics applications.

  1. Photon-assisted Tunneling In Double-barrier Superconducting Tunnel-junctions

    NARCIS (Netherlands)

    Dierichs, M. M. T. M.; Dieleman, P.; Wezelman, J. J.; Honingh, C. E.; Klapwijk, T. M.

    1994-01-01

    Double-barrier Nb/Al2O3/Al/Al2O3/Nb tunnel junctions are used as mixing elements in a 345 GHz waveguide mixer. Noise temperatures (double side band) down to 720 K at 3.0 K are obtained without the need to apply a magnetic field to suppress the Josephson current. It is shown that the composite

  2. Tunneling spectroscopy on superconducting Nb3Sn with artioficial barriers

    International Nuclear Information System (INIS)

    Schneider, U.

    1984-03-01

    Tunneling diodes on Nb 3 Sn were prepared by magnetron sputtering. The superconducting transition temperatures of the Nb 3 Sn films were in the range of 5 to 18 K. An energetically low-lying structure in the tunneling density of states has been localized by detailed studies of the second derivative of the current-voltage characteristics of the diodes. This structure was found near 5.5 meV for stoichiometric Nb 3 Sn (Tsub(c) approx.= 18 K) and at 6.7 meV for understoichiometric Nb 3 Sn (Tsub(c) approx.= 5 K). The minimum in the conductance at zero energy found in the normal state could be identified to be mainly due to inelastic phonon processes of barrier phonons and Nb 3 Sn phonons. Deformations were found in the tunneling density of states of stoichiometric Nb 3 Sn diodes which lead to contradiction when explained by proximity effects. (orig./GSCH)

  3. Niobium nitride Josephson tunnel junctions with magnesium oxide barriers

    International Nuclear Information System (INIS)

    Shoji, A.; Aoyagi, M.; Kosaka, S.; Shinoki, F.; Hayakawa, H.

    1985-01-01

    Niobium nitride-niobium nitride Josephson tunnel junctions have been fabricated using amorphous magnesium oxide (a-MgO) films as barriers. These junctions have excellent tunneling characteristics. For example, a large gap voltage (V/sub g/ = 5.1 mV), a large product of the maximum critical current and the normal tunneling resistance (I/sub c/R/sub n/ = 3.25 mV), and a small subgap leakage current (V/sub m/ = 45 mV, measured at 3 mV) have been obtained for a NbN/a-MgO/NbN junction. The critical current of this junction remains finite up to 14.5 K

  4. Optically controlled resonant tunneling in a double-barrier diode

    Science.gov (United States)

    Kan, S. C.; Wu, S.; Sanders, S.; Griffel, G.; Yariv, A.

    1991-03-01

    The resonant tunneling effect is optically enhanced in a GaAs/GaAlAs double-barrier structure that has partial lateral current confinement. The peak current increases and the valley current decreases simultaneously when the device surface is illuminated, due to the increased conductivity of the top layer of the structure. The effect of the lateral current confinement on the current-voltage characteristic of a double-barrier resonant tunneling structure was also studied. With increased lateral current confinement, the peak and valley current decrease at a different rate such that the current peak-to-valley ratio increases up to three times. The experimental results are explained by solving the electrostatic potential distribution in the structure using a simple three-layer model.

  5. Tunnelling of plane waves through a square barrier

    Energy Technology Data Exchange (ETDEWEB)

    Julve, J [IMAFF, Consejo Superior de Investigaciones CientIficas, Serrano 113 bis, Madrid 28006 (Spain); UrrIes, F J de [Departamento de Fisica, Universidad de Alcala de Henares, Alcala de Henares, Madrid (Spain)], E-mail: julve@imaff.cfmac.csic.es, E-mail: fernando.urries@uah.es

    2008-08-01

    The time evolution of plane waves in the presence of a one-dimensional square quantum barrier is considered. Comparison is made between the cases of an infinite and a cut-off (shutter) initial plane wave. The difference is relevant when the results are applied to the analysis of the tunnelling regime. This work is focused on the analytical calculation of the time-evolved solution and highlights the contribution of the resonant (Gamow) states.

  6. Current-voltage relation for thin tunnel barriers: Parabolic barrier model

    DEFF Research Database (Denmark)

    Hansen, Kim; Brandbyge, Mads

    2004-01-01

    We derive a simple analytic result for the current-voltage curve for tunneling of electrons through a thin uniform insulating layer modeled by a parabolic barrier. Our model, which goes beyond the Wentzel–Kramers–Brillouin approximation, is applicable also in the limit of highly transparant...

  7. Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

    KAUST Repository

    Useinov, Arthur; Mryasov, Oleg; Kosel, Jü rgen

    2011-01-01

    In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR

  8. Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing

    International Nuclear Information System (INIS)

    Akushichi, T.; Shuto, Y.; Sugahara, S.; Takamura, Y.

    2015-01-01

    We investigate spin injection into Si channels using three-terminal spin-accumulation (3T-SA) devices with high-quality CoFe/MgO/n-Si and CoFe/AlO x /n-Si tunnel spin-injectors whose tunnel barriers are formed by radical oxidation of Mg and Al thin films deposited on Si(100) substrates and successive annealing under radical-oxygen exposure. When the MgO and AlO x barriers are not treated by the radical-oxygen annealing, the Hanle-effect signals obtained from the 3T-SA devices are closely fitted by a single Lorentz function representing a signal due to trap spins. On the other hand, when the tunnel barriers are annealed under radical-oxygen exposure, the Hanle-effect signals can be accurately fitted by the superposition of a Lorentz function and a non-Lorentz function representing a signal due to accumulated spins in the Si channel. These results suggest that the quality improvement of tunnel barriers treated by radical-oxygen annealing is highly effective for spin-injection into Si channels

  9. Influence of chemical composition of CoFeB on tunneling magnetoresistance and microstructure in polycrystalline CoFeB/MgO/CoFeB magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Tsunekawa, Koji; Choi, Young-Suk; Nagamine, Yoshinori; Djayaprawira, David D.; Takeuchi, Takashi; Kitamoto, Yoshitaka

    2006-01-01

    We report, for the first time, the correlation between tunneling magnetoresistance (TMR) and the microstructure of polycrystalline CoFeB/MgO/CoFeB magnetic tunnel junctions with various Co/Fe ratios in the (CoFe) 81 B 19 reference and free layers. It is found that the Co/Fe ratio in the (CoFe) 81 B 19 reference layer strongly affects the (001) out-of-plane texture of the MgO tunnel barrier, resulting in the variation in TMR ratio. Further microstructure characterization of the magnetic tunnel junction with a higher TMR ratio and a stronger (001) out-of-plane texture in the MgO tunnel barrier reveals a grain-to-grain lattice match between the crystallized bcc CoFeB reference layer and MgO with a 45deg rotational epitaxial relationship, that is, CoFeB(001)[110]//MgO(001)[100]. (author)

  10. Parametric enhancement of the tunneling transmission through a potential barrier

    International Nuclear Information System (INIS)

    Tanaka, Masatoshi; Iwata, Giiti.

    1992-01-01

    A possibility of indicated of enhancing the tunneling transmission of particle incident on a potential barrier with the aid of an auxiliary potential parametrically in resonance with incident particles. For a simple auxiliary potential, a train of two-step square wells, examples are presented in which the ratio of the transmission coefficients with and without the auxiliary potential can be very large, e.g. (2n + 1) 2L , where n is the positive integer and L the number of the period of the auxiliary potential. (author)

  11. Instanton and noninstanton tunneling in periodically perturbed barriers: semiclassical and quantum interpretations.

    Science.gov (United States)

    Takahashi, Kin'ya; Ikeda, Kensuke S

    2012-11-01

    In multidimensional barrier tunneling, there exist two different types of tunneling mechanisms, instanton-type tunneling and noninstanton tunneling. In this paper we investigate transitions between the two tunneling mechanisms from the semiclassical and quantum viewpoints taking two simple models: a periodically perturbed Eckart barrier for the semiclassical analysis and a periodically perturbed rectangular barrier for the quantum analysis. As a result, similar transitions are observed with change of the perturbation frequency ω for both systems, and we obtain a comprehensive scenario from both semiclassical and quantum viewpoints for them. In the middle range of ω, in which the plateau spectrum is observed, noninstanton tunneling dominates the tunneling process, and the tunneling amplitude takes the maximum value. Noninstanton tunneling explained by stable-unstable manifold guided tunneling (SUMGT) from the semiclassical viewpoint is interpreted as multiphoton-assisted tunneling from the quantum viewpoint. However, in the limit ω→0, instanton-type tunneling takes the place of noninstanton tunneling, and the tunneling amplitude converges on a constant value depending on the perturbation strength. The spectrum localized around the input energy is observed, and there is a scaling law with respect to the width of the spectrum envelope, i.e., the width ∝ℏω. In the limit ω→∞, the tunneling amplitude converges on that of the unperturbed system, i.e., the instanton of the unperturbed system.

  12. Tunnel barrier and noncollinear magnetization effects on shot noise in ferromagnetic/semiconductor/ferromagnetic heterojunctions

    International Nuclear Information System (INIS)

    An Xingtao; Liu Jianjun

    2008-01-01

    Based on the scattering approach, we investigate transport properties of electrons in a one-dimensional waveguide that contains a ferromagnetic/semiconductor/ferromagnetic heterojunction and tunnel barriers in the presence of Rashba and Dresselhaus spin-orbit interactions. We simultaneously consider significant quantum size effects, quantum coherence, Rashba and Dresselhaus spin-orbit interactions and noncollinear magnetizations. It is found that the tunnel barrier plays a decisive role in the transmission coefficient and shot noise of the ballistic spin electron transport through the heterojunction. When the small tunnel barriers are considered, the transport properties of electrons are quite different from those without tunnel barriers

  13. The critical role of the barrier thickness in spin filter tunneling

    International Nuclear Information System (INIS)

    Miller, Casey W.

    2009-01-01

    Spin filter tunneling is considered in the low bias limit as functions of the temperature dependent barrier parameters. We demonstrate the generation of spin polarized tunneling currents in relation to the magnetic order parameter, and discuss how an interfacially suppressed order parameter leads to a temperature dependent tunneling current asymmetry. Analyzing the full parameter space reveals that the often overlooked barrier thickness plays a critical role in spin filter tunneling. With all else fixed, thicker barriers yield higher spin polarization, and allow a given polarization to be achieved at higher temperatures. This insight may open the door for new materials to serve as spin filter barriers.

  14. Lower-temperature crystallization of CoFeB in MgO magnetic tunnel junctions by using Ti capping layer

    International Nuclear Information System (INIS)

    Ibusuki, Takahiro; Miyajima, Toyoo; Umehara, Shinjiro; Eguchi, Shin; Sato, Masashige

    2009-01-01

    Effects of capping materials on magnetoresistance (MR) properties of MgO magnetic tunnel junctions (MTJs) with a CoFeB free layer were investigated. MR ratios of samples with various capping materials showed a difference in annealing temperature dependence. MTJ with a Ti capping layer annealed at 270 deg. C showed a MR ratio 1.4 times greater than that with a conventional Ta or Ru capping layer. Secondary ion mass spectroscopy and high-resolution transmission electron microscopy images revealed that crystallization of CoFeB was remarkably affected by adjacent materials and the Ti capping layer adjoining CoFeB acted as a boron-absorption layer. These results suggest that the crystallization process can be controlled by choosing proper capping materials. Ti is one of the effective materials that accelerate the crystallization of CoFeB layers at lower annealing temperature

  15. Search for Spin Filtering By Electron Tunneling Through Ferromagnetic EuS Barriers in Pbs

    Science.gov (United States)

    Figielski, T.; Morawski, A.; Wosinski, T.; Wrotek, S.; Makosa, A.; Lusakowska, E.; Story, T.; Sipatov, A. Yu.; Szczerbakow, A.; Grasza, K.; hide

    2002-01-01

    Perpendicular transport through single- and double-barrier heterostructures consisting of ferromagnetic EuS layers embedded into PbS matrix was investigated. Manifestations of both resonant tunneling and spin filtering through EuS barrier have been observed.

  16. Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

    KAUST Repository

    Useinov, Arthur

    2011-10-22

    In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR-V curves, output voltages and I-V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR-V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series. © 2012 Elsevier B.V. All rights reserved.

  17. Transmittance and Tunneling Current through a Trapezoidal Barrier under Spin Polarization Consideration

    Science.gov (United States)

    Noor, F. A.; Nabila, E.; Mardianti, H.; Ariani, T. I.; Khairurrijal

    2018-04-01

    The transmittance and tunneling current in heterostructures under spin polarization consideration were studied by employing a zinc-blended structure for the heterostructures. An electron tunnels through a potential barrier by applying a bias voltage to the barrier, which is called the trapezoidal potential barrier. In order to study the transmittance, an Airy wave function approach was employed to find the transmittance. The obtained transmittance was then utilized to compute the tunneling current by using a Gauss quadrature method. It was shown that the transmittances were asymmetric with the incident angle of the electron. It was also shown that the tunneling currents increased as the bias voltage increased.

  18. X-ray studies of interface Fe-oxide in annealed MgO based magnetic tunneling junctions

    Energy Technology Data Exchange (ETDEWEB)

    Telesca, D., E-mail: donaldtelesca@gmail.com [Department of Physics, University of Connecticut, 2152 Hillside Road, Storrs, CT 06269 (United States); Space Vehicles Directorate, Air Force Research Lab (AFRL), Kirtland AFB, NM 87117 (United States); Sinkovic, B. [Space Vehicles Directorate, Air Force Research Lab (AFRL), Kirtland AFB, NM 87117 (United States); Yang, See-Hun; Parkin, S.S.P. [IBM Amaden Research Center, 650 Harry Road, San Jose, CA 95120 (United States)

    2012-08-15

    Highlights: Black-Right-Pointing-Pointer This work concludes the presence of oxide in MgO/transition-metal bi-layers. Black-Right-Pointing-Pointer Thermal annealing causes a possible structural transformation of the oxide. Black-Right-Pointing-Pointer This is first evidence for a possible structural change of the oxide. Black-Right-Pointing-Pointer First use of the O K-edge XAS signature of TM oxides to confirm presence of oxide. Black-Right-Pointing-Pointer We see a diffusion of oxygen and a decrease in interface roughness. -- Abstract: X-ray absorption spectroscopy and X-ray scattering have been used to determine the oxidation reactions at the buried MgO/Fe interface as a result of the deposition of MgO. We confirm that Fe-oxide is present at the MgO/Fe and MgO/CoFe interfaces and amounts to less than 1 mL in thickness. The Fe-oxide is a mixture of different iron oxide phases within the ultra-thin layer which can be reduced following annealing. We observe the transformation of the interfacial oxide from a more Fe{sub 2}O{sub 3}-like phase to a more FeO-like phase following annealing, and that this process is most noticeable between the 200 and 350 Degree-Sign C annealing steps. In addition, the formation of a more bulk like MgO electronic structure following annealing was observed.

  19. Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memory.

    Science.gov (United States)

    Lee, Sangheon; Woo, Jiyong; Lee, Daeseok; Cha, Euijun; Hwang, Hyunsang

    2014-01-01

    In this research, we analyzed the multi-functional role of a tunnel barrier that can be integrated in devices. This tunnel barrier, acting as an internal resistor, changes its resistance with applied bias. Therefore, the current flow in the devices can be controlled by a tunneling mechanism that modifies the tunnel barrier thickness for non-linearity and switching uniformity of devices. When a device is in a low-resistance state, the tunnel barrier controls the current behavior of the device because most of the bias is applied to the tunnel barrier owing to its higher resistance. Furthermore, the tunnel barrier induces uniform filament formation during set operation with the tunnel barrier controlling the current flow.

  20. The time of discrete spectrum identical particles tunneling at their simultaneous passing over rectangular quantum barrier

    International Nuclear Information System (INIS)

    Martsenyuk, L.S.

    2010-01-01

    Research of influence of exchange interaction of identical particles for the time of their simultaneous tunneling through a rectangular quantum barrier is lead. The account of identity leads to necessity of symmetrisation of wave function owing to what in the formula describing interaction of two particles, arises an additional element. In result the parameters of tunneling, including time of tunneling change. Time of tunneling is calculated from the formula received in work from the size of exchange interaction of two particles simultaneously crossing a rectangular quantum barrier.

  1. Determination of the thickness of Al2O3 barriers in magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Buchanan, J.D.R.; Hase, T.P.A.; Tanner, B.K.; Hughes, N.D.; Hicken, R.J.

    2002-01-01

    The barrier thickness in magnetic spin-dependent tunnel junctions with Al 2 O 3 barriers has been measured using grazing incidence x-ray reflectivity and by fitting the tunneling current to the Simmons model. We have studied the effect of glow discharge oxidation time on the barrier structure, revealing a substantial increase in Al 2 O 3 thickness with oxidation. The greater thickness of barrier measured using grazing incidence x-ray reflectivity compared with that obtained by fitting current density-voltage to the Simmons electron tunneling model suggests that electron tunneling is localized to specific regions across the barrier, where the thickness is reduced by fluctuations due to nonconformal roughness

  2. Elimination of two level fluctuators in superconducting quantum bits by an epitaxial tunnel barrier

    International Nuclear Information System (INIS)

    Oh, Seongshik; Cicak, Katarina; Kline, Jeffrey S.; Sillanpaeae, Mika A.; Osborn, Kevin D.; Whittaker, Jed D.; Simmonds, Raymond W.; Pappas, David P.

    2006-01-01

    Quantum computing based on Josephson junction technology is considered promising due to its scalable architecture. However, decoherence is a major obstacle. Here, we report evidence for improved Josephson quantum bits (qubits) using a single-crystal Al 2 O 3 tunnel barrier. We have found an ∼80% reduction in the density of the spectral splittings that indicate the existence of two-level fluctators (TLFs) in amorphous tunnel barriers. The residual ∼20% TLFs can be attributed to interfacial effects that may be further reduced by different electrode materials. These results show that decoherence sources in the tunnel barrier of Josephson qubits can be identified and eliminated

  3. Superluminal tunneling of a relativistic half-integer spin particle through a potential barrier

    Directory of Open Access Journals (Sweden)

    Nanni Luca

    2017-11-01

    Full Text Available This paper investigates the problem of a relativistic Dirac half-integer spin free particle tunneling through a rectangular quantum-mechanical barrier. If the energy difference between the barrier and the particle is positive, and the barrier width is large enough, there is proof that the tunneling may be superluminal. For first spinor components of particle and antiparticle states, the tunneling is always superluminal regardless the barrier width. Conversely, the second spinor components of particle and antiparticle states may be either subluminal or superluminal depending on the barrier width. These results derive from studying the tunneling time in terms of phase time. For the first spinor components of particle and antiparticle states, it is always negative while for the second spinor components of particle and antiparticle states, it is always positive, whatever the height and width of the barrier. In total, the tunneling time always remains positive for particle states while it becomes negative for antiparticle ones. Furthermore, the phase time tends to zero, increasing the potential barrier both for particle and antiparticle states. This agrees with the interpretation of quantum tunneling that the Heisenberg uncertainty principle provides. This study’s results are innovative with respect to those available in the literature. Moreover, they show that the superluminal behaviour of particles occurs in those processes with high-energy confinement.

  4. Temperature dependence of shot noise in double barrier magnetic tunnel junctions

    Science.gov (United States)

    Niu, Jiasen; Liu, Liang; Feng, J. F.; Han, X. F.; Coey, J. M. D.; Zhang, X.-G.; Wei, Jian

    2018-03-01

    Shot noise reveals spin dependent transport properties in a magnetic tunnel junction. We report measurement of shot noise in CoFeB/MgO/CoFeB/MgO/CoFeB double barrier magnetic tunnel junctions, which shows a strong temperature dependence. The Fano factor used to characterize shot noise increases with decreasing temperature. A sequential tunneling model can be used to account for these results, in which a larger Fano factor results from larger spin relaxation length at lower temperatures.

  5. Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

    Science.gov (United States)

    Althammer, Matthias; Mishra, Rohan; Borisevich, Albina J.; Singh, Amit Vikam; Keshavarz, Sahar; Yurtisigi, Mehmet Kenan; Leclair, Patrick; Gupta, Arunava

    We experimentally investigate the structural, magnetic and electrical transport properties of La0.67Sr0.33MnO3 based magnetic tunnel junctions with a SrSnO3 barrier. Our results show that despite the high density of defects in the strontium stannate barrier the observed tunnel magnetoresistance is comparable to tunnel junctions with a better lattice matched SrTiO3 barrier, reaching values of up to 350 % at T = 5 K . Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease of the TMR with increasing bias voltage. Our results suggest that by reducing the structural defects in the strontium stannate barrier, even larger TMR ratios might be possible in the future. We gratefully acknowledge financial support via NSF-ECCS Grant No. 1509875.

  6. Electron-spin polarization in tunnel junctions with ferromagnetic EuS barriers

    International Nuclear Information System (INIS)

    Hao, X.; Moodera, J.S.; Meservey, R.

    1989-01-01

    The authors report here spin-polarized tunneling experiments using non-ferromagnetic electrodes and ferromagnetic EuS barriers. Because of the conduction band in EuS splits into spin-up and spin-down subbands when the temperature is below 16.7 K, the Curie temperature of EuS, the tunnel barrier for electrons with different spin directions is different, therefore giving rise to tunnel current polarization. The spin-filter effect, as it may be called, was observed earlier, directly or indirectly, by several groups: Esaki et al. made a tunneling study on junctions having EuS and EuSe barriers; Thompson et al. studied Schottky barrier tunneling between In and doped EuS; Muller et al. and Kisker et al. performed electron field emission experiments on EuS-coated tungsten tips. The field emission experiments gave a maximum polarization of (89 + 7)% for the emitted electrons. Although the previous tunneling studies did not directly show electron polarization, their results were explained by the same spin- filter effect. This work uses the spin-polarized tunneling technique to show directly that tunnel current is indeed polarized and polarization can be as high as 85%

  7. The time of simultaneous tunneling of identical particles through the rectangular quantum barrier

    International Nuclear Information System (INIS)

    Martsenyuk, L.S.; Omelchenko, S.A.

    2010-01-01

    Work is devoted to studying the influence of exchange processes on a time of simultaneous crossing by identical particles of a rectangular quantum barrier. It is shown, that such processes essentially influence on the parameters of tunneling. The size of addition to time of identical particles tunneling, arising up because of their exchange interaction in a field of a rectangular quantum barrier is first counted.

  8. Magnetic tunnel junctions with AlN and AlNxOy barriers

    International Nuclear Information System (INIS)

    Schwickert, M. M.; Childress, J. R.; Fontana, R. E.; Kellock, A. J.; Rice, P. M.; Ho, M. K.; Thompson, T. J.; Gurney, B. A.

    2001-01-01

    Nonoxide tunnel barriers such as AlN are of interest for magnetic tunnel junctions to avoid the oxidation of the magnetic electrodes. We have investigated the fabrication and properties of thin AlN-based barriers for use in low resistance magnetic tunnel junctions. Electronic, magnetic and structural data of tunnel valves of the form Ta (100 Aa)/PtMn (300 Aa)/CoFe 20 (20 Aa - 25 Aa)/barrier/CoFe 20 (10 - 20 Aa)/NiFe 16 (35 - 40 Aa)/Ta (100 Aa) are presented, where the barrier consists of AlN, AlN x O y or AlN/AlO x with total thicknesses between 8 and 15 Aa. The tunnel junctions were sputter deposited and then lithographically patterned down to 2 x 2μm 2 devices. AlN was deposited by reactive sputtering from an Al target with 20% - 35% N 2 in the Ar sputter gas at room temperature, resulting in stoichiometric growth of AlN x (x=0.50±0.05), as determined by RBS. TEM analysis shows that the as-deposited AlN barrier is crystalline. For AlN barriers and AlN followed by natural O 2 oxidation, we obtain tunnel magnetoresistance >10% with specific junction resistance R j down to 60Ωμm 2 . [copyright] 2001 American Institute of Physics

  9. Large-scale fabrication of BN tunnel barriers for graphene spintronics

    International Nuclear Information System (INIS)

    Fu, Wangyang; Makk, Péter; Maurand, Romain; Bräuninger, Matthias; Schönenberger, Christian

    2014-01-01

    We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by Hexagonal boron nitride, used either as a monolayer or bilayer and placed over the graphene. Spin transport experiments were performed using ferromagnetic contacts deposited onto the barrier. We find that spin injection is still greatly suppressed in devices with a monolayer tunneling barrier due to resistance mismatch. This is, however, not the case for devices with bilayer barriers. For those devices, a spin relaxation time of ∼260 ps intrinsic to the CVD graphene material is deduced. This time scale is comparable to those reported for exfoliated graphene, suggesting that this CVD approach is promising for spintronic applications which require scalable materials

  10. Effects of barrier fluctuation on the tunneling dynamics in the ...

    Indian Academy of Sciences (India)

    the present paper is to study the effect of classical subsystem or more importantly the effect of .... of chaos-assisted tunneling has been a topic of interest for various researchers over many .... state causes the increase in tunneling rate constant.

  11. Micromagnetic and magneto-transport simulations of nanodevices based on MgO tunnel junctions for memory and sensing applications

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Z. [INESC-MN and IN, Rua Alves Redol 9, 1000-029 Lisboa (Portugal); Silva, A.V. [INESC-MN and IN, Rua Alves Redol 9, 1000-029 Lisboa (Portugal); Instituto Superior Tecnico (IST), Av. Rovisco Pais, 1000-029 Lisboa (Portugal); Leitao, D.C., E-mail: dleitao@inesc-mn.pt [INESC-MN and IN, Rua Alves Redol 9, 1000-029 Lisboa (Portugal); Ferreira, R. [International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga, 4715-31 Braga (Portugal); Cardoso, S.; Freitas, P.P. [INESC-MN and IN, Rua Alves Redol 9, 1000-029 Lisboa (Portugal); Instituto Superior Tecnico (IST), Av. Rovisco Pais, 1000-029 Lisboa (Portugal)

    2014-02-15

    This work provides a systematic simulation study of magnetic tunnel junction (MTJ) nanodevices behavior, consisting of a multilayered stack incorporating an in-plane CoFeB free layer and a synthetic antiferromagnetic CoFe-based pinned layer, and including exchange and interlayer couplings. A finite element tool is used to simulate both the magnetic and magneto-transport behaviors of these MTJ nanopillars with distinct geometries, namely circles with diameter ranging from 20 nm up to 250 nm and ellipses with aspect ratios of 1/2, 1/3 and 1/5, corresponding to sizes from 20×40 nm{sup 2} up to 50×250 nm{sup 2}. This study envisages two clear applications for nanopillars: memory and sensor devices. We address the impact of the nanopillar size on the coercivity and saturation field, as figures of merit for device performance. In particular a competitive sensitivity of 0.15%/Oe is envisaged for sensors with a size of 50×100 nm{sup 2}. Our results provide a validation of this simulation method as a expedite tool to assist the nanofabrication process.

  12. Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions.

    Science.gov (United States)

    Kunc, Jan; Hu, Yike; Palmer, James; Guo, Zelei; Hankinson, John; Gamal, Salah H; Berger, Claire; de Heer, Walt A

    2014-09-10

    A purely planar graphene/SiC field effect transistor is presented here. The horizontal current flow over one-dimensional tunneling barrier between planar graphene contact and coplanar two-dimensional SiC channel exhibits superior on/off ratio compared to conventional transistors employing vertical electron transport. Multilayer epitaxial graphene (MEG) grown on SiC(0001̅) was adopted as the transistor source and drain. The channel is formed by the accumulation layer at the interface of semi-insulating SiC and a surface silicate that forms after high vacuum high temperature annealing. Electronic bands between the graphene edge and SiC accumulation layer form a thin Schottky barrier, which is dominated by tunneling at low temperatures. A thermionic emission prevails over tunneling at high temperatures. We show that neglecting tunneling effectively causes the temperature dependence of the Schottky barrier height. The channel can support current densities up to 35 A/m.

  13. Effect of an Interfacial Layer on Electron Tunneling through Atomically Thin Al2O3 Tunnel Barriers.

    Science.gov (United States)

    Wilt, Jamie; Sakidja, Ridwan; Goul, Ryan; Wu, Judy Z

    2017-10-25

    Electron tunneling through high-quality, atomically thin dielectric films can provide a critical enabling technology for future microelectronics, bringing enhanced quantum coherent transport, fast speed, small size, and high energy efficiency. A fundamental challenge is in controlling the interface between the dielectric and device electrodes. An interfacial layer (IL) will contain defects and introduce defects in the dielectric film grown atop, preventing electron tunneling through the formation of shorts. In this work, we present the first systematic investigation of the IL in Al 2 O 3 dielectric films of 1-6 Å's in thickness on an Al electrode. We integrated several advanced approaches: molecular dynamics to simulate IL formation, in situ high vacuum sputtering atomic layer deposition (ALD) to synthesize Al 2 O 3 on Al films, and in situ ultrahigh vacuum scanning tunneling spectroscopy to probe the electron tunneling through the Al 2 O 3 . The IL had a profound effect on electron tunneling. We observed a reduced tunnel barrier height and soft-type dielectric breakdown which indicate that defects are present in both the IL and in the Al 2 O 3 . The IL forms primarily due to exposure of the Al to trace O 2 and/or H 2 O during the pre-ALD heating step of fabrication. As the IL was systematically reduced, by controlling the pre-ALD sample heating, we observed an increase of the ALD Al 2 O 3 barrier height from 0.9 to 1.5 eV along with a transition from soft to hard dielectric breakdown. This work represents a key step toward the realization of high-quality, atomically thin dielectrics with electron tunneling for the next generation of microelectronics.

  14. Thermopower in double planar tunnel junctions with ferromagnetic barriers and nonmagnetic electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Wilczyński, M., E-mail: wilczyns@if.pw.edu.pl

    2017-01-01

    The Seebeck effect is investigated in double planar tunnel junctions consisting of nonmagnetic electrodes and the central layer separated by ferromagnetic barriers. Calculations are performed in the linear response theory using the free-electron model. The thermopower is analyzed as a function of the thickness of the central layer, temperature of the junctions and the relative orientation of magnetic moments of the barriers. It has been found that the thermopower can be significantly enhanced in the junction with special central layer thickness due to electron tunneling by resonant states. The thickness of the central layer for which the thermopower is enhanced depends not only on the temperature of the junction but also on the orientation of magnetic moments in the barriers. - Highlights: • Thermopower in the double planar junctions with magnetic barriers is analyzed. • Thermopower can be enhanced due to the resonant tunneling. • Thermopower depends on the magnetic configuration of the junction.

  15. Tunneling spin injection into single layer graphene.

    Science.gov (United States)

    Han, Wei; Pi, K; McCreary, K M; Li, Yan; Wong, Jared J I; Swartz, A G; Kawakami, R K

    2010-10-15

    We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO₂ seeded MgO barriers. A nonlocal magnetoresistance (ΔR(NL)) of 130  Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔR(NL) vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

  16. When does an electron exit a tunneling barrier?

    Directory of Open Access Journals (Sweden)

    Ivanov M. Yu.

    2013-03-01

    Full Text Available We probe the dynamics of tunnel ionization via high harmonic generation. We characterize the ionization dynamics in helium atoms, and apply our approach to resolve subtle differences in ionization from different orbitals of a CO2 molecule.

  17. Electron transport and noise spectroscopy in organic magnetic tunnel junctions with PTCDA and Alq3 barriers

    Science.gov (United States)

    Martinez, Isidoro; Cascales, Juan Pedro; Hong, Jhen-Yong; Lin, Minn-Tsong; Prezioso, Mirko; Riminucci, Alberto; Dediu, Valentin A.; Aliev, Farkhad G.

    2016-10-01

    The possible influence of internal barrier dynamics on spin, charge transport and their fluctuations in organic spintronics remains poorly understood. Here we present investigation of the electron transport and low frequency noise at temperatures down to 0.3K in magnetic tunnel junctions with an organic PTCDA barriers with thickness up to 5 nm in the tunneling regime and with 200 nm thick Alq3 barrier in the hopping regime. We observed high tunneling magneto-resistance at low temperatures (15-40%) and spin dependent super-poissonian shot noise in organic magnetic tunnel junctions (OMTJs) with PTCDA. The Fano factor exceeds 1.5-2 values which could be caused by interfacial states controlled by spin dependent bunching in the tunneling events through the molecules.1 The bias dependence of the low frequency noise in OMTJs with PTCDA barriers which includes both 1/f and random telegraph noise activated at specific biases will also be discussed. On the other hand, the organic junctions with ferromagnetic electrodes and thick Alq3 barriers present sub-poissonian shot noise which depends on the temperature, indicative of variable range hopping.

  18. Dependence of the Josephson coupling of unconventional superconductors on the properties of the tunneling barrier

    International Nuclear Information System (INIS)

    Ledvij, M.; Klemm, R.A.

    1994-01-01

    The Josephson coupling between a conventional and an unconventional superconductor is investigated as a function of the properties of the tunneling barrier. A simple model is adopted for the tunneling probability and it is shown that its variation dramatically affects the I c R n product of an s-d, as opposed to an s-s junction. Based on these conclusions, experiments are proposed to probe the symmetry of the order parameter in high temperature superconductors

  19. Electric-field effects on electronic tunneling transport in magnetic barrier structures

    International Nuclear Information System (INIS)

    Guo Yong; Wang Hao; Gu Binglin; Kawazoe, Yoshiyuki

    2000-01-01

    Electronic transport properties in magnetic barrier structures under the influence of an electric field have been investigated. The results indicate that the characteristics of transmission resonance are determined not only by the structure and the incident wave vector but also strongly by the electric field. It is shown that the transmission coefficient at resonance in the low-energy range is suppressed by applying the electric field for electron tunneling through the magnetic barrier structure, arranged with identical magnetic barriers and wells. It is also shown that the transmission resonance is first enhanced up to optimal resonance, and then suppressed with further increased electric field for electron tunneling through the magnetic barrier structure, arranged with unidentical building blocks. Strong suppression of the current density is also found in the magnetic barrier structure, arranged with two different building blocks

  20. Macroscopic quantum tunneling of a Bose-Einstein condensate through double Gaussian barriers

    Science.gov (United States)

    Maeda, Kenji; Urban, Gregor; Weidemüller, Matthias; Carr, Lincoln D.

    2015-05-01

    Macroscopic quantum tunneling is one of the great manifestations of quantum physics, not only showing passage through a potential barrier but also emerging in a many-body wave function. We study a quasi-1D Bose-Einstein condensate of Lithium, confined by two Gaussian barriers, and show that in an experimentally realistic potential tens of thousands of atoms tunnel on time scales of 10 to 100 ms. Using a combination of variational and WKB approximations based on the Gross-Pitaevskii or nonlinear Schrödinger equation, we show that many unusual tunneling features appear due to the nonlinearity, including the number of trapped atoms exhibiting non-exponential decay, severe distortion of the barriers by the mean field, and even formation of a triple barrier in certain regimes. In the first 10ms, nonlinear many-body effects make the tunneling rates significantly larger than background loss rates, from 10 to 70 Hz. Thus we conclude that macroscopic quantum tunneling can be observed on experimental time scales. Funded by NSF, AFOSR, the Alexander von Humboldt foundation, and the Heidelberg Center for Quantum Dynamics.

  1. Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Golnaz Karbasian

    2017-03-01

    Full Text Available Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes. Given that atomic layer deposition is used to form CMOS gate stacks with low trap densities and excellent thickness control, it is well-suited as a technique to form a variety of tunnel barriers. This work is a review of our recent research on atomic layer deposition and post-fabrication treatments to fabricate metallic single electron transistors with a variety of metals and dielectrics.

  2. Electronic tunneling through a potential barrier on the surface of a topological insulator

    Science.gov (United States)

    Zhou, Benliang; Zhou, Benhu; Zhou, Guanghui

    2016-12-01

    We investigate the tunneling transport for electrons on the surface of a topological insulator (TI) through an electrostatic potential barrier. By using the Dirac equation with the continuity conditions for all segments of wave functions at the interfaces between regions inside and outside the barrier, we calculate analytically the transmission probability and conductance for the system. It is demonstrated that, the Klein paradox can also been observed in the system same as in graphene system. Interestingly, the conductance reaches the minimum value when the incident electron energy is equal to the barrier strength. Moreover, with increasing barrier width, the conductance turns up some tunneling oscillation peaks, and larger barrier strength can cause lower conductance, shorter period but larger oscillation amplitude. The oscillation amplitude decreases as the barrier width increases, which is similar as that of the system consisting of the compressive uniaxial strain applied on a TI, but somewhat different from that of graphene system where the oscillation amplitude is a constant. The findings here imply that an electrostatic barrier can greatly influence the electron tunneling transport of the system, and may provide a new way to realize directional filtering of electrons.

  3. Photon-Assisted Resonant Chiral Tunneling Through a Bilayer Graphene Barrier

    OpenAIRE

    Phillips A. H.; Mina A. N.

    2011-01-01

    The electronic transport property of a bilayer graphene is investigated under the effect of an electromagnetic field. We deduce an expression for the conductance by solving the Dirac equation. This conductance depends on the barrier height for graphene and the energy of the induced photons. A resonance oscillatory behavior of the conductance is observed. These oscillations are strongly depends on the barrier height for chiral tunneling through graphene. This oscillatory behavio...

  4. Under-the-barrier dynamics in laser-induced relativistic tunneling.

    Science.gov (United States)

    Klaiber, Michael; Yakaboylu, Enderalp; Bauke, Heiko; Hatsagortsyan, Karen Z; Keitel, Christoph H

    2013-04-12

    The tunneling dynamics in relativistic strong-field ionization is investigated with the aim to develop an intuitive picture for the relativistic tunneling regime. We demonstrate that the tunneling picture applies also in the relativistic regime by introducing position dependent energy levels. The quantum dynamics in the classically forbidden region features two time scales, the typical time that characterizes the probability density's decay of the ionizing electron under the barrier (Keldysh time) and the time interval which the electron spends inside the barrier (Eisenbud-Wigner-Smith tunneling time). In the relativistic regime, an electron momentum shift as well as a spatial shift along the laser propagation direction arise during the under-the-barrier motion which are caused by the laser magnetic field induced Lorentz force. The momentum shift is proportional to the Keldysh time, while the wave-packet's spatial drift is proportional to the Eisenbud-Wigner-Smith time. The signature of the momentum shift is shown to be present in the ionization spectrum at the detector and, therefore, observable experimentally. In contrast, the signature of the Eisenbud-Wigner-Smith time delay disappears at far distances for pure quasistatic tunneling dynamics.

  5. Transport spectroscopy and modeling of a clean MOS point contact tunnel barrier

    Science.gov (United States)

    Shirkhorshidian, Amir; Bishop, Nathaniel; Dominguez, Jason; Grubbs, Robert; Wendt, Joel; Lilly, Michael; Carroll, Malcolm

    2014-03-01

    We present transport spectroscopy of non-implanted and antimony-implanted tunnel barriers formed in MOS split-gate structures at 4K. The non-implanted barrier shows no signs of resonant behavior while the Sb-implanted barrier shows resonances superimposed on the clean transport. We simulate the transmission through the clean barrier over the entire gate and bias range of the experiment using a phenomenological 1D-tunneling model that includes Fowler-Nordheim tunneling and Schottky barrier lowering to capture effects at high bias. The model is qualitatively similar to experiment when the barrier height has a quadratic dependence in contrast to a linear one, which can be a sign of 2D effects such as confinement perpendicular to the transport direction. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. This work was supported by the Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

  6. Influence of semiconductor barrier tunneling on the current-voltage characteristics of tunnel metal-oxide-semiconductor diodes

    DEFF Research Database (Denmark)

    Nielsen, Otto M.

    1983-01-01

    of multistep tunneling recombination current and injected minority carrier diffusion current. This can explain the observed values of the diode quality factor n. The results also show that the voltage drop across the oxide Vox is increased with increased NA, with the result that the lowering of the minority...... carrier diode current Jmin is greater than in the usual theory. The conclusion drawn is that the increase in Vox and lowering of Jmin is due to multistep tunneling of majority carriers through the semiconductor barrier. Journal of Applied Physics is copyrighted by The American Institute of Physics.......Current–voltage characteristics have been examined for Al–SiO2–pSi diodes with an interfacial oxide thickness of delta[approximately-equal-to]20 Å. The diodes were fabricated on and oriented substrates with an impurity concentration in the range of NA=1014–1016 cm−3. The results show that for low...

  7. Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix

    Science.gov (United States)

    Forrest, Stephen R.

    2008-08-19

    A plurality of quantum dots each have a shell. The quantum dots are embedded in an organic matrix. At least the quantum dots and the organic matrix are photoconductive semiconductors. The shell of each quantum dot is arranged as a tunneling barrier to require a charge carrier (an electron or a hole) at a base of the tunneling barrier in the organic matrix to perform quantum mechanical tunneling to reach the respective quantum dot. A first quantum state in each quantum dot is between a lowest unoccupied molecular orbital (LUMO) and a highest occupied molecular orbital (HOMO) of the organic matrix. Wave functions of the first quantum state of the plurality of quantum dots may overlap to form an intermediate band.

  8. Tunnel barrier design in donor nanostructures defined by hydrogen-resist lithography

    Science.gov (United States)

    Pascher, Nikola; Hennel, Szymon; Mueller, Susanne; Fuhrer, Andreas

    2016-08-01

    A four-terminal donor quantum dot (QD) is used to characterize potential barriers between degenerately doped nanoscale contacts. The QD is fabricated by hydrogen-resist lithography on Si(001) in combination with n-type doping by phosphine. The four contacts have different separations (d = 9, 12, 16 and 29 nm) to the central 6 nm × 6 nm QD island, leading to different tunnel and capacitive coupling. Cryogenic transport measurements in the Coulomb-blockade (CB) regime are used to characterize these tunnel barriers. We find that field enhancement near the apex of narrow dopant leads is an important effect that influences both barrier breakdown and the magnitude of the tunnel current in the CB transport regime. From CB-spectroscopy measurements, we extract the mutual capacitances between the QD and the four contacts, which scale inversely with the contact separation d. The capacitances are in excellent agreement with numerical values calculated from the pattern geometry in the hydrogen resist. Furthermore, we show that by engineering the source-drain tunnel barriers to be asymmetric, we obtain a much simpler excited-state spectrum of the QD, which can be directly linked to the orbital single-particle spectrum.

  9. Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

    NARCIS (Netherlands)

    Wang, Kai; Sanderink, Johannes G.M.; Bolhuis, Thijs; van der Wiel, Wilfred Gerard; de Jong, Machiel Pieter

    2015-01-01

    A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the

  10. Bias voltage effect on electron tunneling across a junction with a ferroelectric–ferromagnetic two-phase composite barrier

    International Nuclear Information System (INIS)

    Wang Jian; Ju Sheng; Li, Z.Y.

    2012-01-01

    The effect of bias voltage on electron tunneling across a junction with a ferroelectric–ferromagnetic composite barrier is investigated theoretically. Because of the inversion symmetry breaking of the spontaneous ferroelectric polarization, bias voltage dependence of the electron tunneling shows significant differences between the positive bias and the negative one. The differences of spin filtering or tunnel magnetoresistance increase with the increasing absolute value of bias voltage. Such direction preferred electron tunneling is found intimately related with the unusual asymmetry of the electrical potential profile in two-phase composite barrier and provides a unique change to realize rectifying functions in spintronics. - Highlights: ► Electron tunneling across a ferroelectric–ferromagnetic composite barrier junction. ► TMR effect is different under the same value but opposite direction bias voltage. ► This directionality of the electron tunneling enhances with increasing bias voltage.

  11. Tunneling effect on double potential barriers GaAs and PbS

    Science.gov (United States)

    Prastowo, S. H. B.; Supriadi, B.; Ridlo, Z. R.; Prihandono, T.

    2018-04-01

    A simple model of transport phenomenon tunnelling effect through double barrier structure was developed. In this research we concentrate on the variation of electron energy which entering double potential barriers to transmission coefficient. The barriers using semiconductor materials GaAs (Galium Arsenide) with band-gap energy 1.424 eV, distance of lattice 0.565 nm, and PbS (Lead Sulphide) with band gap energy 0.41 eV distance of lattice is 18 nm. The Analysisof tunnelling effect on double potentials GaAs and PbS using Schrodinger’s equation, continuity, and matrix propagation to get transmission coefficient. The maximum energy of electron that we use is 1.0 eV, and observable from 0.0025 eV- 1.0 eV. The shows the highest transmission coefficient is0.9982 from electron energy 0.5123eV means electron can pass the barriers with probability 99.82%. Semiconductor from materials GaAs and PbS is one of selected material to design semiconductor device because of transmission coefficient directly proportional to bias the voltage of semiconductor device. Application of the theoretical analysis of resonant tunnelling effect on double barriers was used to design and develop new structure and combination of materials for semiconductor device (diode, transistor, and integrated circuit).

  12. ON current enhancement of nanowire Schottky barrier tunnel field effect transistors

    Science.gov (United States)

    Takei, Kohei; Hashimoto, Shuichiro; Sun, Jing; Zhang, Xu; Asada, Shuhei; Xu, Taiyu; Matsukawa, Takashi; Masahara, Meishoku; Watanabe, Takanobu

    2016-04-01

    Silicon nanowire Schottky barrier tunnel field effect transistors (NW-SBTFETs) are promising structures for high performance devices. In this study, we fabricated NW-SBTFETs to investigate the effect of nanowire structure on the device characteristics. The NW-SBTFETs were operated with a backgate bias, and the experimental results demonstrate that the ON current density is enhanced by narrowing the width of the nanowire. We confirmed using the Fowler-Nordheim plot that the drain current in the ON state mainly comprises the quantum tunneling component through the Schottky barrier. Comparison with a technology computer aided design (TCAD) simulation revealed that the enhancement is attributed to the electric field concentration at the corners of cross-section of the NW. The study findings suggest an effective approach to securing the ON current by Schottky barrier width modulation.

  13. Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

    Science.gov (United States)

    Wang, K.; Sanderink, J. G. M.; Bolhuis, T.; van der Wiel, W. G.; de Jong, M. P.

    2015-01-01

    A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an insulating CoO layer, incorporated into a tunnel junction consisting of sapphire(substrate)/fcc-Co/CoO/AlOx/Al. The ferromagnetic Co layer is exchange coupled to the AFM CoO layer and drives rotation of the AFM moments in an external magnetic field. The results may help pave the way towards the development of spintronic devices based on AFM insulators. PMID:26486931

  14. In-situ grazing incidence X-ray diffraction measurements of relaxation in Fe/MgO/Fe epitaxial magnetic tunnel junctions during annealing

    Energy Technology Data Exchange (ETDEWEB)

    Eastwood, D.S. [Department of Physics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Ali, M.; Hickey, B.J. [Department of Physics and Astronomy, University of Leeds, Leeds LS2 1JT (United Kingdom); Tanner, B.K., E-mail: b.k.tanner@dur.ac.uk [Department of Physics, Durham University, South Road, Durham DH1 3LE (United Kingdom)

    2013-12-15

    The relaxation of Fe/MgO/Fe tunnel junctions grown epitaxially on (001) MgO substrates has been measured by in-situ grazing incidence in-plane X-ray diffraction during the thermal annealing cycle. We find that the Fe layers are fully relaxed and that there are no irreversible changes during annealing. The MgO tunnel barrier is initially strained towards the Fe but on annealing, relaxes and expands towards the bulk MgO value. The strain dispersion is reduced in the MgO by about 40% above 480 K post-annealing. There is no significant change in the “twist” mosaic. Our results indicate that the final annealing stage of device fabrication, crucial to attainment of high TMR, induces substantial strain relaxation at the MgO barrier/lower Fe electrode interface. - Highlights: • Lattice relaxation of Fe/MgO/Fe epitaxial magnetic tunnel junctions measured. • In-plane lattice parameter of Fe equal to bulk value; totally relaxed. • MgO barrier initially strained towards the Fe but relaxes on annealing. • Reduction in strain dispersion in the MgO barrier by 40% above about 470 K. • No change in the in-plane “twist” mosaic throughout the annealing cycle.

  15. Quantum tunneling time of a Bose-Einstein condensate traversing through a laser-induced potential barrier

    International Nuclear Information System (INIS)

    Duan Zhenglu; Fan Bixuan; Yuan Chunhua; Zhang Weiping; Cheng Jing; Zhu Shiyao

    2010-01-01

    We theoretically study the effect of atomic nonlinearity on the tunneling time in the case of an atomic Bose-Einstein condensate (BEC) traversing the laser-induced potential barrier. The atomic nonlinearity is controlled to appear only in the region of the barrier by employing the Feshbach resonance technique to tune interatomic interaction in the tunneling process. Numerical simulation shows that the atomic nonlinear effect dramatically changes the tunneling behavior of the BEC matter wave packet and results in the violation of the Hartman effect and the occurrence of negative tunneling time.

  16. Rotational barriers in ammonium hexachlorometallates as studied by NMR, tunneling spectroscopy and ab initio calculations

    DEFF Research Database (Denmark)

    Birczynski, A.; Lalowicz, Z.T.; Lodziana, Zbigniew

    2004-01-01

    Ammonium hexachlorometallates, (NH4)(2)MCl6 With M = Pd, Pt, Ir, Os, Re, Se, Sn, Te and Pb, comprise a set of compounds with systematically changing properties. The compounds may be ordered according to decreasing tunnelling frequency (TF) of ammonium ions, which is related to the increasing...... structure explain observed variation of the tunnelling frequencies for NH4+. The theory provides also M-Cl distances and barriers for C-2 and C-3 rotations of ammonium ions in respective compounds, which show good agreement with experimental values. (C) 2004 Elsevier B.V. All rights reserved....

  17. Conductance enhancement due to interface magnons in electron-beam evaporated MgO magnetic tunnel junctions with CoFeB free layer deposited at different pressure

    Energy Technology Data Exchange (ETDEWEB)

    Guo, P.; Yu, G. Q.; Wei, H. X.; Han, X. F., E-mail: jiafengfeng@aphy.iphy.ac.cn, E-mail: xfhan@aphy.iphy.ac.cn [Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Li, D. L.; Feng, J. F., E-mail: jiafengfeng@aphy.iphy.ac.cn, E-mail: xfhan@aphy.iphy.ac.cn [Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); CRANN and School of Physics, Trinity College, Dublin 2 (Ireland); Kurt, H. [CRANN and School of Physics, Trinity College, Dublin 2 (Ireland); Department of Engineering Physics, Istanbul Medeniyet University, 34720 Istanbul (Turkey); Chen, J. Y.; Coey, J. M. D. [CRANN and School of Physics, Trinity College, Dublin 2 (Ireland)

    2014-10-21

    Electron-beam evaporated MgO-based magnetic tunnel junctions have been fabricated with the CoFeB free layer deposited at Ar pressure from 1 to 4 mTorr, and their tunneling process has been studied as a function of temperature and bias voltage. By changing the growth pressure, the junction dynamic conductance dI/dV, inelastic electron tunneling spectrum d²I/dV², and tunneling magnetoresistance vary with temperature. Moreover, the low-energy magnon cutoff energy E{sub C} derived from the conductance versus temperature curve agrees with interface magnon energy obtained directly from the inelastic electron tunneling spectrum, which demonstrates that interface magnons are involved in the electron tunneling process, opening an additional conductance channel and thus enhancing the total conductance.

  18. Ultrahigh Tunneling-Magnetoresistance Ratios in Nitride-Based Perpendicular Magnetic Tunnel Junctions from First Principles

    Science.gov (United States)

    Yang, Baishun; Tao, Lingling; Jiang, Leina; Chen, Weizhao; Tang, Ping; Yan, Yu; Han, Xiufeng

    2018-05-01

    We report a first-principles study of electronic structures, magnetic properties, and the tunneling-magnetoresistance (TMR) effect of a series of ferromagnetic nitride M4N (M =Fe , Co, Ni)-based magnetic tunnel junctions (MTJs). It is found that bulk Fe4 N reveals a half-metal nature in terms of the Δ1 state. A perpendicular magnetic anisotropy is observed in the periodic system Fe4 N /MgO . In particular, the ultrahigh TMR ratio of over 24 000% is predicted in the Fe4 N /MgO /Fe4N MTJ due to the interface resonance tunneling and relatively high transmission for states of other symmetry. Besides, the large TMR can be maintained with the change of atomic details at the interface, such as the order-disorder interface, the change of thickness of the MgO barrier, and different in-plane lattice constants of the MTJ. The physical origin of the TMR effect can be well understood by analyzing the band structure and transmission channel of bulk Fe4 N as well as the transmission in momentum space of Fe4 N /MgO /Fe4N . Our results suggest that the Fe4 N /MgO /Fe4N MTJ is a benefit for spintronic applications.

  19. Photon-Assisted Resonant Chiral Tunneling Through a Bilayer Graphene Barrier

    Directory of Open Access Journals (Sweden)

    Phillips A. H.

    2011-01-01

    Full Text Available The electronic transport property of a bilayer graphene is investigated under the effect of an electromagnetic field. We deduce an expression for the conductance by solving the Dirac equation. This conductance depends on the barrier height for graphene and the energy of the induced photons. A resonance oscillatory behavior of the conductance is observed. These oscillations are strongly depends on the barrier height for chiral tunneling through graphene. This oscillatory behavior might be due to the interference of different central band and sidebands of graphene states. The present investigation is very important for the application of bilayer graphene in photodetector devices, for example, far-infrared photodevices and ultrafast lasers.

  20. Time dependent semiclassical tunneling through one dimensional barriers using only real valued trajectories

    Energy Technology Data Exchange (ETDEWEB)

    Herman, Michael F. [Department of Chemistry, Tulane University, New Orleans, Louisiana 70118 (United States)

    2015-10-28

    The time independent semiclassical treatment of barrier tunneling has been understood for a very long time. Several semiclassical approaches to time dependent tunneling through barriers have also been presented. These typically involve trajectories for which the position variable is a complex function of time. In this paper, a method is presented that uses only real valued trajectories, thus avoiding the complications that can arise when complex trajectories are employed. This is accomplished by expressing the time dependent wave packet as an integration over momentum. The action function in the exponent in this expression is expanded to second order in the momentum. The expansion is around the momentum, p{sub 0{sup *}}, at which the derivative of the real part of the action is zero. The resulting Gaussian integral is then taken. The stationary phase approximation requires that the derivative of the full action is zero at the expansion point, and this leads to a complex initial momentum and complex tunneling trajectories. The “pseudo-stationary phase” approximation employed in this work results in real values for the initial momentum and real valued trajectories. The transmission probabilities obtained are found to be in good agreement with exact quantum results.

  1. Time dependent semiclassical tunneling through one dimensional barriers using only real valued trajectories

    International Nuclear Information System (INIS)

    Herman, Michael F.

    2015-01-01

    The time independent semiclassical treatment of barrier tunneling has been understood for a very long time. Several semiclassical approaches to time dependent tunneling through barriers have also been presented. These typically involve trajectories for which the position variable is a complex function of time. In this paper, a method is presented that uses only real valued trajectories, thus avoiding the complications that can arise when complex trajectories are employed. This is accomplished by expressing the time dependent wave packet as an integration over momentum. The action function in the exponent in this expression is expanded to second order in the momentum. The expansion is around the momentum, p 0 * , at which the derivative of the real part of the action is zero. The resulting Gaussian integral is then taken. The stationary phase approximation requires that the derivative of the full action is zero at the expansion point, and this leads to a complex initial momentum and complex tunneling trajectories. The “pseudo-stationary phase” approximation employed in this work results in real values for the initial momentum and real valued trajectories. The transmission probabilities obtained are found to be in good agreement with exact quantum results

  2. A theoretical study of resonant tunneling characteristics in triangular double-barrier diodes

    International Nuclear Information System (INIS)

    Wang Hongmei; Xu Huaizhe; Zhang Yafei

    2006-01-01

    Resonant tunneling characteristics of triangular double-barrier diodes have been investigated systematically in this Letter, using Airy function approach to solve time-independent Schroedinger function in triangular double-barrier structures. Originally, the exact analytic expressions of quasi-bound levels and quasi-level lifetime in symmetrical triangular double-barrier structures have been derived within the effective-mass approximation as a function of structure parameters including well width, slope width and barrier height. Based on our derived analytic expressions, numerical results show that quasi-bound levels and quasi-level lifetime vary nearly linearly with the structure parameters except that the second quasi-level lifetime changes parabolically with slope width. Furthermore, according to our improved transmission coefficient of triangular double-barrier structures under external electric field, the current densities of triangular double-barrier diodes with different slope width at 0 K have been calculated numerically. The results show that the N-shaped negative differential resistance behaviors have been observed in current-voltage characteristics and current-voltage characteristics depend on the slope width

  3. Degradation of magnetic tunnel junctions with thin AlOx barrier

    Directory of Open Access Journals (Sweden)

    Tadashi Mihara, Yoshinari Kamakura, Masato Morifuji and Kenji Taniguchi

    2007-01-01

    Full Text Available The degradation of magnetic tunnel junctions (MTJs with AlOx barrier was experimentally investigated. Constant voltage stress (CVS measurement was carried out to monitor the time evolution of the conductance and tunneling magnetoresistance (TMR of MTJs. The gradual increase of the stress-induced leakage current (SILC was observed prior to the breakdown, following a power law function of stress time with an exponent of about 0.2–0.4, which is similar to the case of the ultrathin gate oxide films in MOSFETs. The measured TMR for SILC suggests that the spin-dependent current component would be involved in the early stage of degradation, while spin-independent conduction becomes dominant before the breakdown resulting in a decrease of TMR.

  4. Nonlinear properties of double and triple barrier resonant tunneling structures in the sub-THz range

    International Nuclear Information System (INIS)

    Karuzskij, A.L.; Perestoronin, A.V.; Volchkov, N.A.

    2012-01-01

    The high-frequency nonlinear properties of GaAs/AlAs resonant tunneling diode (RTD) nanostructures and perspectives of implementation of the quantum regime of amplification in such structures, which is especially efficient in the range of sub-THz and THz ranges, are investigated. It is shown that in a triple barrier RTD the symmetry between the processes of amplification and dissipation can be avoided because of the interaction of an electromagnetic wave with both of resonant states in two quantum wells, that results in the significant growth of an RTD efficiency [ru

  5. Tunneling of an energy eigenstate through a parabolic barrier viewed from Wigner phase space

    DEFF Research Database (Denmark)

    Heim, D.M.; Schleich, W.P.; Alsing, P.M.

    2013-01-01

    We analyze the tunneling of a particle through a repulsive potential resulting from an inverted harmonic oscillator in the quantum mechanical phase space described by the Wigner function. In particular, we solve the partial differential equations in phase space determining the Wigner function...... of an energy eigenstate of the inverted oscillator. The reflection or transmission coefficients R or T are then given by the total weight of all classical phase-space trajectories corresponding to energies below, or above the top of the barrier given by the Wigner function....

  6. Spin polarization of tunneling current in barriers with spin-orbit coupling

    International Nuclear Information System (INIS)

    Fujita, T; Jalil, M B A; Tan, S G

    2008-01-01

    We present a general method for evaluating the maximum transmitted spin polarization and optimal spin axis for an arbitrary spin-orbit coupling (SOC) barrier system, in which the spins lie in the azimuthal plane and finite spin polarization is achieved by wavevector filtering of electrons. Besides momentum filtering, another prerequisite for finite spin polarization is asymmetric occupation or transmission probabilities of the eigenstates of the SOC Hamiltonian. This is achieved most efficiently by resonant tunneling through multiple SOC barriers. We apply our analysis to common SOC mechanisms in semiconductors: pure bulk Dresselhaus SOC, heterostructures with mixed Dresselhaus and Rashba SOC and strain-induced SOC. In particular, we find that the interplay between Dresselhaus and Rashba SOC effects can yield several advantageous features for spin filter and spin injector functions, such as increased robustness to wavevector spread of electrons

  7. Spin polarization of tunneling current in barriers with spin-orbit coupling.

    Science.gov (United States)

    Fujita, T; Jalil, M B A; Tan, S G

    2008-03-19

    We present a general method for evaluating the maximum transmitted spin polarization and optimal spin axis for an arbitrary spin-orbit coupling (SOC) barrier system, in which the spins lie in the azimuthal plane and finite spin polarization is achieved by wavevector filtering of electrons. Besides momentum filtering, another prerequisite for finite spin polarization is asymmetric occupation or transmission probabilities of the eigenstates of the SOC Hamiltonian. This is achieved most efficiently by resonant tunneling through multiple SOC barriers. We apply our analysis to common SOC mechanisms in semiconductors: pure bulk Dresselhaus SOC, heterostructures with mixed Dresselhaus and Rashba SOC and strain-induced SOC. In particular, we find that the interplay between Dresselhaus and Rashba SOC effects can yield several advantageous features for spin filter and spin injector functions, such as increased robustness to wavevector spread of electrons.

  8. Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions

    KAUST Repository

    Useinov, Arthur

    2011-10-01

    Spin-polarization asymmetry is the key parameter in asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) in magnetic tunnel junctions. In this paper, we study the value of the TMR as a function of the applied voltage Va in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the TMR-V a curves for negative and positive voltages in the homojunctions. As a result, we found that AVB may help to determine the exact values of Fermi wave vectors for minority and majority conducting spin sub-bands. Moreover, significant asymmetry of the experimental TMR-Va curves, which arises due to different annealing regimes, is explained by different heights of the tunnel barriers and values of the spin asymmetry. The numerical TMR-V a data are in good agreement with experimental ones. © 2011 IEEE.

  9. Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier

    International Nuclear Information System (INIS)

    Tian Xiao-Bo; Xu Hui

    2014-01-01

    The recent published experimental data of titanium oxide memristor devices which are tested under the same experimental conditions exhibit the strange instability and complexity of these devices. Such undesired characteristics preclude the understanding of the device conductive processes and the memristor-based practical applications. The possibility of the coexistence of dopant drift and tunnel barrier conduction in a memristor provides preliminary explanations for the undesired characteristics. However, current research lacks detailed discussion about the coexistence case. In this paper, dopant drift and tunnel barrier-based theories are first analyzed for studying the relations between parameters and physical variables which affect characteristics of memristors, and then the influences of each parameter change on the conductive behaviors in the single and coexistence cases of the two mechanisms are simulated and discussed respectively. The simulation results provide further explanations of the complex device conduction. Theoretical methods of eliminating or reducing the coexistence of the two mechanisms are proposed, in order to increase the stability of the device conduction. This work also provides the support for optimizing the fabrications of memristor devices with excellent performance

  10. Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element.

    Science.gov (United States)

    Lόpez-Mir, L; Frontera, C; Aramberri, H; Bouzehouane, K; Cisneros-Fernández, J; Bozzo, B; Balcells, L; Martínez, B

    2018-01-16

    Multiple spin functionalities are probed on Pt/La 2 Co 0.8 Mn 1.2 O 6 /Nb:SrTiO 3 , a device composed by a ferromagnetic insulating barrier sandwiched between non-magnetic electrodes. Uniquely, La 2 Co 0.8 Mn 1.2 O 6 thin films present strong perpendicular magnetic anisotropy of magnetocrystalline origin, property of major interest for spintronics. The junction has an estimated spin-filtering efficiency of 99.7% and tunneling anisotropic magnetoresistance (TAMR) values up to 30% at low temperatures. This remarkable angular dependence of the magnetoresistance is associated with the magnetic anisotropy whose origin lies in the large spin-orbit interaction of Co 2+ which is additionally tuned by the strain of the crystal lattice. Furthermore, we found that the junction can operate as an electrically readable magnetic memory device. The findings of this work demonstrate that a single ferromagnetic insulating barrier with strong magnetocrystalline anisotropy is sufficient for realizing sensor and memory functionalities in a tunneling device based on TAMR.

  11. The magnetic characteristics of perpendicular magnetic tunnel junction with MgO and Al-O oxidation layers in various thickness

    International Nuclear Information System (INIS)

    Chen, T.-J.; Canizo-Cabrera, A.; Chang, C.-H.; Liao, K.-A.; Li, Simon C.; Hou, C.-K.; Wu Teho

    2006-01-01

    In this work we show the magnetic characteristics of perpendicular magnetic tunnel junction (pMTJ) with different oxidation layers. The pMTJs structures were made by RF and DC magnetron sputtering. Individual depositions of magnesium oxide layers and of aluminum oxide films were prepared by plasma oxidation. The experimental results showed that the initial switching field was decreased as the magnesium oxide thickness was increased. Further work of the aluminum oxide surface roughness and hysteresis loop influenced by different oxidation layers on pMTJs structures will be discussed as well

  12. Effect of the δ-potential on spin-dependent electron tunneling in double barrier semiconductor heterostructure

    Science.gov (United States)

    Chandrasekar, L. Bruno; Gnanasekar, K.; Karunakaran, M.

    2018-06-01

    The effect of δ-potential was studied in GaAs/Ga0.6Al0·4As double barrier heterostructure with Dresselhaus spin-orbit interaction. The role of barrier height and position of the δ- potential in the well region was analysed on spin-dependent electron tunneling using transfer matrix method. The spin-separation between spin-resonances on energy scale depends on both height and position of the δ- potential, whereas the tunneling life time of electrons highly influenced by the position of the δ- potential and not on the height. These results might be helpful for the fabrication of spin-filters.

  13. Co2FeAl based magnetic tunnel junctions with BaO and MgO/BaO barriers

    Directory of Open Access Journals (Sweden)

    J. Rogge

    2015-07-01

    Full Text Available We succeed to integrate BaO as a tunneling barrier into Co2FeAl based magnetic tunnel junctions (MTJs. By means of Auger electron spectroscopy it could be proven that the applied annealing temperatures during BaO deposition and afterwards do not cause any diffusion of Ba neither into the lower Heusler compound lead nor into the upper Fe counter electrode. Nevertheless, a negative tunnel magnetoresistance (TMR ratio of -10% is found for Co2FeAl (24 nm / BaO (5 nm / Fe (7 nm MTJs, which can be attributed to the preparation procedure and can be explained by the formation of Co- and Fe-oxides at the interfaces between the Heusler and the crystalline BaO barrier by comparing with theory. Although an amorphous structure of the BaO barrier seems to be confirmed by high-resolution transmission electron microscopy (TEM, it cannot entirely be ruled out that this is an artifact of TEM sample preparation due to the sensitivity of BaO to moisture. By replacing the BaO tunneling barrier with an MgO/BaO double layer barrier, the electric stability could effectively be increased by a factor of five. The resulting TMR effect is found to be about +20% at room temperature, although a fully antiparallel state has not been realized.

  14. Structural details of Al/Al 2O3 junctions and their role in the formation of electron tunnel barriers

    Science.gov (United States)

    Koberidze, M.; Puska, M. J.; Nieminen, R. M.

    2018-05-01

    We present a computational study of the adhesive and structural properties of the Al/Al 2O3 interfaces as building blocks of the metal-insulator-metal (MIM) tunnel devices, where electron transport is accomplished via tunneling mechanism through the sandwiched insulating barrier. The main goal of this paper is to understand, on the atomic scale, the role of the geometrical details in the formation of the tunnel barrier profiles. Initially, we concentrate on the adhesive properties of the interfaces. To provide reliable results, we carefully assess the accuracy of the traditional methods used to examine Al/Al 2O3 systems. These are the most widely employed exchange-correlation functionals—local-density approximation and two different generalized gradient approximations; the universal binding-energy relation for predicting equilibrium interfacial distances and adhesion energies; and the ideal work of separation as a measure of junction stability. In addition, we show that the established interpretation of the computed ideal work of separation might be misleading in predicting the optimal interface structures. Finally, we perform a detailed analysis of the atomic and interplanar relaxations in each junction, and identify their contributions to the tunnel barrier parameters. Our results imply that the structural irregularities on the surface of the Al film have a significant contribution to lowering the tunnel barrier height, while atomic relaxations at the interface and interplanar relaxations in Al2O3 may considerably change the width of the barrier and, thus, distort its uniformity. Both the effects may critically influence the performance of the MIM tunnel devices.

  15. WIPP Magnesium Oxide (MgO) - Planned Change Request

    Science.gov (United States)

    On April 10, 2006, the DOE submitted a planned change request pertaining to the amount of MgO emplaced in the WIPP repository. MgO is an engineered barrier that DOE included as part of the original WIPP Certification Decision.

  16. Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene/n-Ge junction

    International Nuclear Information System (INIS)

    Li Gui-fang; Hu Jing; Lv Hui; Cui Zhijun; Hou Xiaowei; Liu Shibin; Du Yongqian

    2016-01-01

    We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co 2 MnSi and the germanium (Ge) channel modulates the Schottky barrier height and the resistance–area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height (SBH) occurs following the insertion of the graphene layer between Co 2 MnSi and Ge. The electron SBH is modulated in the 0.34 eV–0.61 eV range. Furthermore, the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility. (paper)

  17. Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene/n-Ge junction

    Science.gov (United States)

    Gui-fang, Li; Jing, Hu; Hui, Lv; Zhijun, Cui; Xiaowei, Hou; Shibin, Liu; Yongqian, Du

    2016-02-01

    We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co2MnSi and the germanium (Ge) channel modulates the Schottky barrier height and the resistance-area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height (SBH) occurs following the insertion of the graphene layer between Co2MnSi and Ge. The electron SBH is modulated in the 0.34 eV-0.61 eV range. Furthermore, the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility. Project supported by the National Natural Science Foundation of China (Grant No. 61504107) and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 3102014JCQ01059 and 3102015ZY043).

  18. Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

    Science.gov (United States)

    Clément, P.-Y.; Baraduc, C.; Ducruet, C.; Vila, L.; Chshiev, M.; Diény, B.

    2015-09-01

    Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.

  19. Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Clément, P.-Y.; Baraduc, C.; Chshiev, M.; Diény, B.; Ducruet, C.; Vila, L.

    2015-01-01

    Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated

  20. Tunneling Characteristics Depending on Schottky Barriers and Diffusion Current in SiOC.

    Science.gov (United States)

    Oh, Teresa; Kim, Chy Hyung

    2016-02-01

    To obtain a diffusion current in SiOC, the aluminum doped zinc oxide films were deposited on SiOC/Si wafer by a RF magnetron sputtering. All the X-ray patterns of the SiOC films showed amorphous phases. The level of binding energy of Si atoms will lead to an additional potential modulation by long range Coulombic and covalent interactions with oxygen ions. The growth of the AZO film was affected by the characteristics of SiOC, resulting in similar trends in XPS spectra and a shift to higher AZO lattice d values than the original AZO d values in XRD analyses. The charges trapped by the defects at the interlayer between AZO and SiOC films induced the decreased mobility of carriers. In the absence of trap charges, AZO grown on SiOC film such as the sample prepared at O2 = 25 or 30 sccm, which has low charge carrier concentration and high mobility, showed high mobility in an ambipolar characteristic of oxide semiconductor due to the tunneling effect and diffusion current. The structural matching of an interface between AZO and amorphous SiOC enhanced the height of Schottky Barrier (SB), and then the mobility was increased by the tunneling effect from band to band through the high SB.

  1. The strain effect on the Dirac electrons tunneling through the time-periodic scalar and vector barriers

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Weixian, E-mail: wxyansxu@gmail.com

    2017-01-01

    The tunneling of the massless and massive Dirac particle through the strained barriers driven by the time-periodic scalar potentials and the static vector potentials is investigated, where the interrelationships among the strain, the incidence angle, the dynamic scalar potential, the magnetic field and the transmission of the Dirac particle have been discussed. In either massless or massive case, the intersection angle between the obliquely incident Dirac particle and strain determines the extent of deviation of the tunneling profiles from the strainless case. The time-periodic scalar potentials can enhance the capability of the Dirac particle to surmount the energy gap induced by the mass, reflecting quantum nature of the photon-assisted tunneling. When the magnetic field is switched on, the transmission overall presents a remarkably different profile, and decreases with the increase of the magnetic fields due to the conservation of the transverse momentum, which reduces the number of the side-band channels for tunneling.

  2. Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions

    KAUST Repository

    Useinov, Arthur; Kosel, Jü rgen

    2011-01-01

    in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the TMR-V a curves for negative and positive voltages in the homojunctions

  3. Development of CdTe/Cd1-xMgxTe double barrier, single quantum well heterostructure for resonant tunneling

    International Nuclear Information System (INIS)

    Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G.

    1995-01-01

    We report the first observation of resonant tunneling through a CdTe/Cd 1-x Mg x Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K. (author)

  4. Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure.

    Science.gov (United States)

    Lee, Du-Yeong; Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun

    2016-12-01

    For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 °C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.c) crystallized layer into a mixture of b.c.c, face-centered cubic, and amorphous layers and rapidly decreased the tunneling-magnetoresistance (TMR) ratio. The p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer could prevent the Pt atoms diffusing into the MgO tunneling barrier during ex situ annealing at 400 °C because of non-necessity of a Pt buffer layer, demonstrating the TMR ratio of ~143 %.

  5. Tunnel spin polarization versus energy for clean and doped Al2O3 barriers

    NARCIS (Netherlands)

    Park, B.G.; Banerjee, T.; Lodder, J.C.; Jansen, R.

    2007-01-01

    The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the

  6. Tunnel Spin Polarization Versus Energy for Clean and Doped Al2O3 Barriers

    NARCIS (Netherlands)

    Park, B.G.; Banerjee, T.; Lodder, J.C.; Jansen, R.

    2007-01-01

    The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the

  7. Low-leakage superconducting tunnel junctions with a single-crystal Al{sub 2}O{sub 3} barrier

    Energy Technology Data Exchange (ETDEWEB)

    Oh, S [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Department of Physics, University of Illinois, Urbana, IL 61801 (United States); Cicak, K; Osborn, K D; Simmonds, R W; Pappas, D P [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, R; Cooper, K B; Steffen, M; Martinis, J M [University of California, Santa Barbara, CA 93106 (United States)

    2005-10-01

    We have developed a two-step growth scheme for single-crystal Al{sub 2}O{sub 3} tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminium (Al) oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al{sub 2}O{sub 3} layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current. This single-crystal Al{sub 2}O{sub 3} junction may open a new venue for coherent quantum devices.

  8. Barrier tunneling of the loop-nodal semimetal in the hyperhoneycomb lattice

    Science.gov (United States)

    Guan, Ji-Huan; Zhang, Yan-Yang; Lu, Wei-Er; Xia, Yang; Li, Shu-Shen

    2018-05-01

    We theoretically investigate the barrier tunneling in the 3D model of the hyperhoneycomb lattice, which is a nodal-line semimetal with a Dirac loop at zero energy. In the presence of a rectangular potential, the scattering amplitudes for different injecting states around the nodal loop are calculated, by using analytical treatments of the effective model, as well as numerical simulations of the tight binding model. In the low energy regime, states with remarkable transmissions are only concentrated in a small range around the loop plane. When the momentum of the injecting electron is coplanar with the nodal loop, nearly perfect transmissions can occur for a large range of injecting azimuthal angles if the potential is not high. For higher potential energies, the transmission shows a resonant oscillation with the potential, but still with peaks being perfect transmissions that do not decay with the potential width. These strikingly robust transports of the loop-nodal semimetal can be approximately explained by a momentum dependent Dirac Hamiltonian.

  9. HfO2 and SiO2 as barriers in magnetic tunneling junctions

    Science.gov (United States)

    Shukla, Gokaran; Archer, Thomas; Sanvito, Stefano

    2017-05-01

    SiO2 and HfO2 are both high-k, wide-gap semiconductors, currently used in the microelectronic industry as gate barriers. Here we investigate whether the same materials can be employed to make magnetic tunnel junctions, which in principle can be amenable for integration in conventional Si technology. By using a combination of density functional theory and the nonequilibrium Green's functions method for quantum transport we have studied the transport properties of Co [0001 ] /SiO2[001 ] /Co [0001 ] and Fe [001 ] /HfO2[001 ] /Fe [001 ] junctions. In both cases we found a quite large magnetoresistance, which is explained through the analysis of the real band structure of the magnets and the complex one of the insulator. We find that there is no symmetry spin filtering for the Co-based junction since the high transmission Δ2' band crosses the Fermi level, EF, for both spin directions. However, the fact that Co is a strong ferromagnet makes the orbital contribution to the two Δ2' spin subbands different, yielding magnetoresistance. In contrast for the Fe-based junction symmetry filtering is active for an energy window spanning between the Fermi level and 1 eV below EF, with Δ1 symmetry contributing to the transmission.

  10. Intrinsic current oscillations in an asymmetric triple-barrier resonant tunnelling diode

    International Nuclear Information System (INIS)

    Wójcik, P; Spisak, B J; Wołoszyn, M; Adamowski, J

    2010-01-01

    The electronic transport characteristics of an asymmetric triple-barrier resonant tunnelling diode are calculated by the time-dependent Wigner–Poisson method. The intrinsic current oscillations are found in two separate bias voltage ranges. The first one is located below the resonant current peak, and the second lies in the negative differential resistance region. We provide the explanation of the current density oscillations in these two separate bias voltage ranges based on the analysis of the self-consistent potential profiles and changes of electron density. We have shown that two different formation mechanisms are responsible for the current density oscillations in these two bias voltage ranges. In the bias voltage range below the resonant current peak in the current–voltage characteristics, the current density oscillations are caused by the coupling between quasi-bound states in the left and right quantum wells. On the other hand, the current density oscillations in the negative differential resistance region result from the coupling between quasi-bound states in the left quantum well and the quantum well formed in the region of the left contact

  11. Spin-related tunneling through a nanostructured electric-magnetic barrier on the surface of a topological insulator.

    Science.gov (United States)

    Wu, Zhenhua; Li, Jun

    2012-01-27

    We investigate quantum tunneling through a single electric and/or magnetic barrier on the surface of a three-dimensional topological insulator. We found that (1) the propagating behavior of electrons in such system exhibits a strong dependence on the direction of the incident electron wavevector and incident energy, giving the possibility to construct a wave vector and/or energy filter; (2) the spin orientation can be tuned by changing the magnetic barrier structure as well as the incident angles and energies.PACS numbers: 72.25.Dc; 73.20.-r; 73.23.-b; 75.70.-i.

  12. Rupture of a high pressure gas or steam pipe in a tunnel: a preliminary investigation of the jet thrust exerted on a tunnel barrier

    International Nuclear Information System (INIS)

    Baum, M.R.

    1988-04-01

    On power plant, if a high pressure pipe containing high temperature gas or steam were to rupture, sensitive equipment necessary for safety shutdown of the plant could possibly be incapacitated if exposed to the subsequent high temperature environment. In many plant configurations the high pressure pipework is contained in tunnels where it is possible to construct barriers which isolate one section of the plant from another, thereby restricting the spread of the high temperature fluid/air mixture. This paper describes a preliminary experimental investigation of the magnitude of the thrust likely to be exerted on such barriers by a gas jet issuing from the failed pipe. Measurements of the thrust exerted on a flat plate by normal impingement of a highly underexpanded gas jet are in agreement with a semi-quantitative analysis assuming conservation of the axial momentum of the jet. (author)

  13. In silico simulations of tunneling barrier measurements for molecular orbital-mediated junctions: A molecular orbital theory approach to scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Terryn, Raymond J.; Sriraman, Krishnan; Olson, Joel A., E-mail: jolson@fit.edu; Baum, J. Clayton, E-mail: cbaum@fit.edu [Department of Chemistry, Florida Institute of Technology, 150 West University Boulevard, Melbourne, Florida 32901 (United States); Novak, Mark J. [Department of Chemistry and Applied Biological Sciences, South Dakota School of Mines and Technology, 501 E. Saint Joseph Street, Rapid City, South Dakota 57701 (United States)

    2016-09-15

    A new simulator for scanning tunneling microscopy (STM) is presented based on the linear combination of atomic orbitals molecular orbital (LCAO-MO) approximation for the effective tunneling Hamiltonian, which leads to the convolution integral when applied to the tip interaction with the sample. This approach intrinsically includes the structure of the STM tip. Through this mechanical emulation and the tip-inclusive convolution model, dI/dz images for molecular orbitals (which are closely associated with apparent barrier height, ϕ{sub ap}) are reported for the first time. For molecular adsorbates whose experimental topographic images correspond well to isolated-molecule quantum chemistry calculations, the simulator makes accurate predictions, as illustrated by various cases. Distortions in these images due to the tip are shown to be in accord with those observed experimentally and predicted by other ab initio considerations of tip structure. Simulations of the tunneling current dI/dz images are in strong agreement with experiment. The theoretical framework provides a solid foundation which may be applied to LCAO cluster models of adsorbate–substrate systems, and is extendable to emulate several aspects of functional STM operation.

  14. In silico simulations of tunneling barrier measurements for molecular orbital-mediated junctions: A molecular orbital theory approach to scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Terryn, Raymond J.; Sriraman, Krishnan; Olson, Joel A.; Baum, J. Clayton; Novak, Mark J.

    2016-01-01

    A new simulator for scanning tunneling microscopy (STM) is presented based on the linear combination of atomic orbitals molecular orbital (LCAO-MO) approximation for the effective tunneling Hamiltonian, which leads to the convolution integral when applied to the tip interaction with the sample. This approach intrinsically includes the structure of the STM tip. Through this mechanical emulation and the tip-inclusive convolution model, dI/dz images for molecular orbitals (which are closely associated with apparent barrier height, ϕ_a_p) are reported for the first time. For molecular adsorbates whose experimental topographic images correspond well to isolated-molecule quantum chemistry calculations, the simulator makes accurate predictions, as illustrated by various cases. Distortions in these images due to the tip are shown to be in accord with those observed experimentally and predicted by other ab initio considerations of tip structure. Simulations of the tunneling current dI/dz images are in strong agreement with experiment. The theoretical framework provides a solid foundation which may be applied to LCAO cluster models of adsorbate–substrate systems, and is extendable to emulate several aspects of functional STM operation.

  15. Tunneling anisotropic magnetoresistance driven by magnetic phase transition.

    Science.gov (United States)

    Chen, X Z; Feng, J F; Wang, Z C; Zhang, J; Zhong, X Y; Song, C; Jin, L; Zhang, B; Li, F; Jiang, M; Tan, Y Z; Zhou, X J; Shi, G Y; Zhou, X F; Han, X D; Mao, S C; Chen, Y H; Han, X F; Pan, F

    2017-09-06

    The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here, we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in α'-FeRh-based junctions driven by the magnetic phase transition of α'-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one α'-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the α'-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α'-FeRh magnetic electrode.

  16. MgO monolayer epitaxy on Ni (100)

    Science.gov (United States)

    Sarpi, B.; Putero, M.; Hemeryck, A.; Vizzini, S.

    2017-11-01

    The growth of two-dimensional oxide films with accurate control of their structural and electronic properties is considered challenging for engineering nanotechnological applications. We address here the particular case of MgO ultrathin films grown on Ni (100), a system for which neither crystallization nor extended surface ordering has been established previously in the monolayer range. Using Scanning Tunneling Microscopy and Auger Electron Spectroscopy, we report on experiments showing MgO monolayer (ML) epitaxy on a ferromagnetic nickel surface, down to the limit of atomic thickness. Alternate steps of Mg ML deposition, O2 gas exposure, and ultrahigh vacuum thermal treatment enable the production of a textured film of ordered MgO nano-domains. This study could open interesting prospects for controlled epitaxy of ultrathin oxide films with a high magneto-resistance ratio on ferromagnetic substrates, enabling improvement in high-efficiency spintronics and magnetic tunnel junction devices.

  17. Low-voltage high-speed programming gate-all-around floating gate memory cell with tunnel barrier engineering

    Science.gov (United States)

    Hamzah, Afiq; Ezaila Alias, N.; Ismail, Razali

    2018-06-01

    The aim of this study is to investigate the memory performances of gate-all-around floating gate (GAA-FG) memory cell implementing engineered tunnel barrier concept of variable oxide thickness (VARIOT) of low-k/high-k for several high-k (i.e., Si3N4, Al2O3, HfO2, and ZrO2) with low-k SiO2 using three-dimensional (3D) simulator Silvaco ATLAS. The simulation work is conducted by initially determining the optimized thickness of low-k/high-k barrier-stacked and extracting their Fowler–Nordheim (FN) coefficients. Based on the optimized parameters the device performances of GAA-FG for fast program operation and data retention are assessed using benchmark set by 6 and 8 nm SiO2 tunnel layer respectively. The programming speed has been improved and wide memory window with 30% increment from conventional SiO2 has been obtained using SiO2/Al2O3 tunnel layer due to its thin low-k dielectric thickness. Furthermore, given its high band edges only 1% of charge-loss is expected after 10 years of ‑3.6/3.6 V gate stress.

  18. Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

    International Nuclear Information System (INIS)

    Yim, H.I.; Lee, S.Y.; Hwang, J.Y.; Rhee, J.R.; Chun, B.S.; Wang, K.L.; Kim, Y.K.; Kim, T.W.; Lee, S.S.; Hwang, D.G.

    2008-01-01

    Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer 10/AlO x /CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of +0.4 and -0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Self-consistent calculation of tunneling current in w-GaN/AlGaN(0001) two-barrier heterostructures

    International Nuclear Information System (INIS)

    Grinyaev, S. N.; Razzhuvalov, A. N.

    2006-01-01

    The specific features of the tunneling current in wurtzite GaN/AlGaN(0001) two-barrier structures are studied by solving the Schroedinger equation and the Poisson equation simultaneously, with regard to spontaneous and piezoelectric polarizations. It is shown that the internal fields manifest themselves in the asymmetry of the tunneling current via the value of the electronic charge in the quantum well. This charge is larger when the internal and external fields in the well compensate each other, resulting in smaller shifts of potential and resonance levels in the active region with voltage, in the higher resistance of the structure, and in the linear current-voltage dependence within a wide range of voltages. When the internal and external fields are the same, the current exhibits a sharp negative-differential-conductivity structure, with the peak-to-valley ratio equal to about four. The structure is similar to one of the branches of the current-voltage characteristic of the GaAs/AlGaAs(001) two-barrier structure, suggesting that nitrides are promising materials for resonance-tunneling devices

  20. Infinite dwell time and group delay in resonant electron tunneling through double complex potential barrier

    Science.gov (United States)

    Opacak, Nikola; Milanović, Vitomir; Radovanović, Jelena

    2017-12-01

    Tunneling times in complex potentials are investigated. Analytical expressions for dwell time, self-interference time and group delay are obtained for the case of complex double delta potentials. It is shown that we can always find a set of parameters of the potential so that the tunneling times achieve very large values and even approach infinity for the case of resonance. The phenomenon of infinite tunneling times occurs for only one particular positive value of the imaginary part of the potential, if all other parameters are given.

  1. Decrease of the tunneling time and violation of the Hartman effect for large barriers

    International Nuclear Information System (INIS)

    Olkhovsky, V.S.; Zaichenko, A.K.; Petrillo, V.

    2004-01-01

    The explicit formulation of the initial conditions of the definition of the wave-packet tunneling time is proposed. This formulation takes adequately into account the irreversibility of the wave-packet space-time spreading. Moreover, it explains the violations of the Hartman effect, leading to a strong decrease of the tunneling times up to negative values for wave packets with large momentum spreads due to strong wave-packet time spreading

  2. Magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy

    Directory of Open Access Journals (Sweden)

    Keyu Ning

    2017-01-01

    Full Text Available As one invigorated filed of spin caloritronics combining with spin, charge and heat current, the magneto-Seebeck effect has been experimentally and theoretically studied in spin tunneling thin films and nanostructures. Here we analyze the tunnel magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy (p-MTJs under various measurement temperatures. The large tunnel magneto-Seebeck (TMS ratio up to −838.8% for p-MTJs at 200 K is achieved, with Seebeck coefficient S in parallel and antiparallel states of 6.7 mV/K and 62.9 mV/K, respectively. The temperature dependence of the tunnel magneto-Seebeck can be attributed to the contributing transmission function and electron states at the interface between CoFeB electrode and MgO barrier.

  3. Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films.

    Science.gov (United States)

    Li, D L; Ma, Q L; Wang, S G; Ward, R C C; Hesjedal, T; Zhang, X-G; Kohn, A; Amsellem, E; Yang, G; Liu, J L; Jiang, J; Wei, H X; Han, X F

    2014-12-02

    Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. Here, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. In this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.

  4. Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

    Science.gov (United States)

    Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P.

    2007-10-01

    MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2eV, which corresponds to a 3.2eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior.

  5. Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P.

    2007-01-01

    MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12 nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2 eV, which corresponds to a 3.2 eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior

  6. A new spin-functional MOSFET based on magnetic tunnel junction technology: pseudo-spin-MOSFET

    OpenAIRE

    Shuto, Yusuke; Nakane, Ryosho; Wang, Wenhong; Sukegawa, Hiroaki; Yamamoto, Shuu'ichirou; Tanaka, Masaaki; Inomata, Koichiro; Sugahara, Satoshi

    2009-01-01

    We fabricated and characterized a new spin-functional MOSFET referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of spin-transistors. Device integration techniques for a bottom gate MOSFET using a silicon-on-insulator (SOI) substrate and for an MTJ with a full-Heusler alloy electrode and MgO tunnel barrier were developed. The fabricated PS-MOSFET exhibited high and low transconductanc...

  7. Dissipative tunneling through a potential barrier in the Lindblad theory of open quantum systems

    International Nuclear Information System (INIS)

    Isar, A.

    2000-01-01

    In the Lindblad theory for open quantum systems, and analytical expression of the tunneling probability through an inverted parabola is obtained. This probability depends on the environment coefficient and increase with the dissipation and the temperature of the thermal bath. (author)

  8. TAMR effect in the tunneling through monocrystalline GaAs barriers; TAMR-Effekt beim Tunneln durch einkristalline GaAs-Barrieren

    Energy Technology Data Exchange (ETDEWEB)

    Lobenhofer, Michael

    2013-01-28

    Within the scope of this thesis the TAMR-effect in magnetic tunnel junctions with a single-crystalline GaAs-barrier was investigated. As ferromagnetic electrodes Fe-, FeCo- and FePt-layers were used. The measured TAMR-effect was investigated with respect to its behaviour towards changes in external Parameters, like the applied voltage, the temperature and the external magnetic field. The physical origin of the effect was attributed to the interaction of Rashba- and Dresselhaus-Spin-Orbit-coupling inside the tunnelling barrier and at the metal/semiconductor-interfaces.

  9. Ultrafast demagnetization enhancement in CoFeB/MgO/CoFeB magnetic tunneling junction driven by spin tunneling current.

    Science.gov (United States)

    He, Wei; Zhu, Tao; Zhang, Xiang-Qun; Yang, Hai-Tao; Cheng, Zhao-Hua

    2013-10-07

    The laser-induced ultrafast demagnetization of CoFeB/MgO/CoFeB magnetic tunneling junction is exploited by time-resolved magneto-optical Kerr effect (TRMOKE) for both the parallel state (P state) and the antiparallel state (AP state) of the magnetizations between two magnetic layers. It was observed that the demagnetization time is shorter and the magnitude of demagnetization is larger in the AP state than those in the P state. These behaviors are attributed to the ultrafast spin transfer between two CoFeB layers via the tunneling of hot electrons through the MgO barrier. Our observation indicates that ultrafast demagnetization can be engineered by the hot electrons tunneling current. It opens the door to manipulate the ultrafast spin current in magnetic tunneling junctions.

  10. Spin filtering through ferromagnetic BiMn O3 tunnel barriers

    Science.gov (United States)

    Gajek, M.; Bibes, M.; Barthélémy, A.; Bouzehouane, K.; Fusil, S.; Varela, M.; Fontcuberta, J.; Fert, A.

    2005-07-01

    We report on experiments of spin filtering through ultrathin single-crystal layers of the insulating and ferromagnetic oxide BiMnO3 (BMO). The spin polarization of the electrons tunneling from a gold electrode through BMO is analyzed with a counterelectrode of the half-metallic oxide La2/3Sr1/3MnO3 (LSMO). At 3K we find a 50% change of the tunnel resistances according to whether the magnetizations of BMO and LSMO are parallel or opposite. This effect corresponds to a spin-filtering efficiency of up to 22%. Our results thus show the potential of complex ferromagnetic insulating oxides for spin filtering and injection.

  11. The time analysis of multiple internal reflections in tunneling description through the barrier

    International Nuclear Information System (INIS)

    Ol'khovskij, V.S.; Majdanyuk, S.P.

    2000-01-01

    The problem of scattering of a nonrelativistic particle on a nucleus is considered, the interaction potential between which has a spherically symmetrical view. As the further development of the time analysis of processes of tunneling the non-stationary method of the solution of a problem is represented, due to which begins the possibility to describe in a time dependence the propagation (tunneling) of a particle and in details to study this process in an interesting instant or concerning a concrete point of space. At calculating the time parameters the method has shown itself simple and convenient. At finding the expressions for stationary wave functions for problems with an interaction potential, which radial part has more composite view than rectangular, this method is more effective than reference stationary approaches

  12. Analysis of the resonant tunneling diode with the stepped pre-barrier

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Voves, J.

    2009-01-01

    Roč. 193, č. 1 (2009), s. 1-4 ISSN 1742-6588. [16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructure. Monpellier, 24.8.2009 – 28.8.2009] R&D Projects: GA AV ČR KJB200670901; GA AV ČR(CZ) KAN401220801 Institutional research plan: CEZ:AV0Z20670512 Keywords : Resonant tunneling diodes * Nonequilibrium Green functions * Hysteresis Subject RIV: JA - Electronics ; Optoelectronics , Electrical Engineering

  13. Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes

    Energy Technology Data Exchange (ETDEWEB)

    Boucherit, M.; Soltani, A.; Rousseau, M.; Deresmes, D.; Berthe, M.; Durand, C.; De Jaeger, J.-C. [IEMN/UMR-CNRS 8520, Universite Lille1, PRES Universite Lille Nord de France (France); Monroy, E. [Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, DRFMC/SP2M/PSC, CEA-Grenoble (France)

    2011-10-31

    AlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam epitaxy on GaN/sapphire template and processed into mesa diameters from 2 {mu}m to 4 {mu}m. The current-voltage characteristics were carried out in direct current operation and under-high vacuum. A sharp negative differential resistance (NDR) was detected in the forward bias at 120 K. The NDR was observed for the mesa size of 2 {mu}m at 4 V with a peak-to-valley current ratio of 3.5. The measurement conditions were chosen to make NDR reproducible more than 50 times and apparent in both scan voltage directions after electrical treatment.

  14. Comparison of Electron Transmittance and Tunneling Current through a Trapezoidal Potential Barrier with Spin Polarization Consideration by using Analytical and Numerical Approaches

    Science.gov (United States)

    Nabila, Ezra; Noor, Fatimah A.; Khairurrijal

    2017-07-01

    In this study, we report an analytical calculation of electron transmittance and polarized tunneling current in a single barrier heterostructure of a metal-GaSb-metal by considering the Dresselhaus spin orbit effect. Exponential function, WKB method and Airy function were used in calculating the electron transmittance and tunneling current. A Transfer Matrix Method, as a numerical method, was utilized as the benchmark to evaluate the analytical calculation. It was found that the transmittances calculated under exponential function and Airy function is the same as that calculated under TMM method at low electron energy. However, at high electron energy only the transmittance calculated under Airy function approach is the same as that calculated under TMM method. It was also shown that the transmittances both of spin-up and spin-down conditions increase as the electron energy increases for low energies. Furthermore, the tunneling current decreases with increasing the barrier width.

  15. Development of CdTe/Cd{sub 1-x}Mg{sub x}Te double barrier, single quantum well heterostructure for resonant tunneling

    Energy Technology Data Exchange (ETDEWEB)

    Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G. [Physikalishes Institut der Universitaet Wuerzburg am Hubland, Wuerzburg (Germany)

    1995-12-31

    We report the first observation of resonant tunneling through a CdTe/Cd{sub 1-x}Mg{sub x}Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K. (author). 16 refs, 2 figs.

  16. Deep repository - engineered barrier systems. Assessment of backfill materials and methods for deposition tunnels

    International Nuclear Information System (INIS)

    Gunnarsson, D.; Moren, L.; Sellin, P; Keto, P.

    2007-09-01

    The main objectives of this report are to: (1) present density criteria considering deposition tunnels for the investigated backfill materials, (2) evaluate what densities can be achieved with the suggested backfill methods, (3) compare the density criteria to achievable densities, (4) based on this comparison evaluate the safety margin for the combinations of backfill materials and methods and, (5) make recommendations for further investigations and development work. The backfilling methods considered in this report are compaction of backfill material in situ in the tunnel and placement of pre-compacted blocks and pellets. The materials investigated in the second phase of the SKB-Posiva backfilling programme can be divided into three main categories: (1) Bentonite clays: two high-grade Na-bentonites from Wyoming (MX-80 and SPV200), one low-grade bentonite from Kutch (India Asha 2 0), and one high- and one low-grade Ca-bentonite from Milos (Deponite CA-N and Milos backfill). The highgrade bentonites are used in different bentonite-ballast mixtures. (2) Smectite-rich mixed-layer clays: one from Dnesice-Plzensko Jih (DPJ) located in the Czech Republic and one from Northern Germany (Friedland clay). (3) Mixtures of bentonite and ballast: Mixtures consisting of high-grade bentonite (30, 40 and 50 w-%) and crushed rock with different type of grain size distribution or sand. The general conclusion from the comparison between estimated achievable densities and the density criteria is that placing pre-compacted blocks of swelling clay or 50/50 mixture and pellets in the tunnel results in the highest safety margin. (orig.)

  17. Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots

    Directory of Open Access Journals (Sweden)

    T. Ferrus

    2012-06-01

    Full Text Available We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow energy defects together with an enhancement of localization satisfactory explain our observations. Effects observed in magnetic fields are also discussed.

  18. Magnetic microstructure of candidates for epitaxial dual Heusler magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Kaiser, A.; Banerjee, D.; Rata, A.D.; Wiemann, C.; Cramm, S.; Schneider, C.M.

    2009-01-01

    Heusler alloys are considered as interesting ferromagnetic electrode materials for magnetic tunnel junctions, because of their high spin polarization. We, therefore, investigated the micromagnetic properties in a prototypical thin film system comprising two different Heusler phases Co 2 MnSi (CMS) and Co 2 FeSi (CFS) separated by a MgO barrier. The magnetic microstructure was investigated by X-ray photoemission electron microscopy (XPEEM). We find a strong influence of the Heusler phase formation process on the magnetic domain patterns. SiO 2 /V/CMS/MgO/CFS and SiO 2 /V/CFS/MgO/CMS trilayer structures exhibit a strikingly different magnetic behavior, which is due to pinhole coupling through the MgO barrier and a strong thickness dependence of the magnetic ordering in Co 2 MnSi

  19. Low-resistance magnetic tunnel junctions prepared by partial remote plasma oxidation of 0.9 nm Al barriers

    International Nuclear Information System (INIS)

    Ferreira, Ricardo; Freitas, Paulo P.; MacKenzie, Maureen; Chapman, John N.

    2005-01-01

    Current perpendicular to the plane read-head elements suitable for high-density magnetic storage require low resistance while maintaining a reasonable magnetoresistive (MR) signal (RxA 2 and MR>20% for areal densities >200 Gb/in 2 ). This letter shows that competitive low RxA junctions can be produced using underoxidized barriers starting from 0.9 nm thick Al layers. For as-deposited junctions, tunneling magnetoresistance (TMR) ∼20% for RxA∼2-15 Ω μm 2 is obtained, while in the RxA∼60-150 Ω μm 2 range, TMR values between 40% to 45% are achieved. A limited number of junctions exhibits considerably lower RxA values with respect to the average, while keeping a similar MR (down to 0.44 Ω μm 2 with TMR of 20% and down to 2.2 Ω μm 2 with TMR of 52%). Experimental data suggest that current confinement to small regions (barrier defects/hot spots) may explain these results

  20. Theory of spin-dependent tunnelling in magnetic junctions

    International Nuclear Information System (INIS)

    Mathon, J.

    2002-01-01

    Rigorous theory of the tunnelling magnetoresistance (TMR) based on the real-space Kubo formula and fully realistic tight-binding bands fitted to an ab initio band structure is described. It is first applied to calculate the TMR of two Co electrodes separated by a vacuum gap. The calculated TMR ratio reaches ∼65% in the tunnelling regime but can be as high as 280% in the metallic regime when the vacuum gap is of the order of the Co interatomic distance (abrupt domain wall). It is also shown that the spin polarization P of the tunnelling current is negative in the metallic regime but becomes positive P∼35% in the tunnelling regime. Calculation of the TMR of an epitaxial Fe/MgO/Fe(001) junction is also described. The calculated optimistic TMR ratio is in excess of 1000% for an MgO barrier of ∼20 atomic planes and the spin polarization of the tunnelling current is positive for all MgO thicknesses. It is also found that spin-dependent tunnelling in an Fe/MgO/Fe(001) junction is not entirely determined by states at the Γ point (k parallel = 0) even for MgO thicknesses as large as ∼20 atomic planes. Finally, it is demonstrated that the TMR ratio calculated from the Kubo formula remains non-zero when one of the Co electrodes is covered with a copper layer. It is shown that non-zero TMR is due to quantum well states in the Cu layer which do not participate in transport. Since these only occur in the down-spin channel, their loss from transport creates a spin asymmetry of electrons tunnelling from a Cu interlayer, i.e. non-zero TMR. Numerical modelling is used to show that diffuse scattering from a random distribution of impurities in the barrier may cause quantum well states to evolve into propagating states, in which case the spin asymmetry of the non-magnetic layer is lost and with it the TMR. (author)

  1. Quantum tunneling through a very narrow triangular potential barrier exact and WKB solution

    International Nuclear Information System (INIS)

    Ballo, P.; Harmatha, L.

    2011-01-01

    We have investigated the quantum-mechanical transmission of an electron in narrow potential barrier. It has been shown that application of WKB approximation could give enormous error if the slope of potential is rapid. Edification of this work is that unreasonable application of numerical approximations without the deep knowledge of theory should give wrong result. This we should remember every second, every day. (authors)

  2. Deep repository - engineered barrier systems. Assessment of backfill materials and methods for deposition tunnels

    International Nuclear Information System (INIS)

    Gunnarsson, David; Moren, Lena; Sellin, Patrik; Keto, Paula

    2006-09-01

    The main objectives of this report are to: 1) present density criteria considering deposition tunnels for the investigated backfill materials, 2) evaluate what densities can be achieved with the suggested backfill methods, 3) compare the density criteria to achievable densities, 4) based on this comparison evaluate the safety margin for the combinations of backfill materials and methods and, 5) make recommendations for further investigations and development work. The backfilling methods considered in this report are compaction of backfill material in situ in the tunnel and placement of pre-compacted blocks and pellets. The materials investigated in the second phase of the SKB-Posiva backfilling project can be divided into three main categories: 1. Bentonite clays: two high-grade Na-bentonites from Wyoming (MX-80 and SPV200), one low-grade bentonite from Kutch (India Asha 230), and one high and one low-grade Ca-bentonite from Milos (Deponite CA-N and Milos backfill). The high-grade bentonites are used in different bentonite-ballast mixtures. 2. Smectite-rich mixed-layer clays: one from Dnesice-Plzensko Jih (DPJ) located in the Czech Republic and one from Northern Germany (Friedland clay). Mixtures of bentonite and ballast: Mixtures consisting of high-grade bentonite (0, 40 and 50 w-%) and crushed rock with different type of grain size distribution or sand. The relationships between dry densities and hydraulic conductivity, swelling pressure and compressibility in saturated state for these materials were investigated. Most of the tests were performed with a groundwater salinity of 3.5%. This salinity is comparable to sea water and can be expected to be at the high end of salinities occurring during the assessment period. The purpose of the investigations was to determine the dry densities required to meet the function indicator criteria. These densities are referred to as the density criteria. However throughout the assessment period a loss of material and thus

  3. Deep repository - engineered barrier systems. Assessment of backfill materials and methods for deposition tunnels

    Energy Technology Data Exchange (ETDEWEB)

    Gunnarsson, David; Moren, Lena; Sellin, Patrik [Swedish Nuclear Fuel and Waste Management Co., Stockholm (Sweden); Keto, Paula [Saanio and Riekkola Oy, Helsinki (Finland)

    2006-09-15

    The main objectives of this report are to: 1) present density criteria considering deposition tunnels for the investigated backfill materials, 2) evaluate what densities can be achieved with the suggested backfill methods, 3) compare the density criteria to achievable densities, 4) based on this comparison evaluate the safety margin for the combinations of backfill materials and methods and, 5) make recommendations for further investigations and development work. The backfilling methods considered in this report are compaction of backfill material in situ in the tunnel and placement of pre-compacted blocks and pellets. The materials investigated in the second phase of the SKB-Posiva backfilling project can be divided into three main categories: 1. Bentonite clays: two high-grade Na-bentonites from Wyoming (MX-80 and SPV200), one low-grade bentonite from Kutch (India Asha 230), and one high and one low-grade Ca-bentonite from Milos (Deponite CA-N and Milos backfill). The high-grade bentonites are used in different bentonite-ballast mixtures. 2. Smectite-rich mixed-layer clays: one from Dnesice-Plzensko Jih (DPJ) located in the Czech Republic and one from Northern Germany (Friedland clay). Mixtures of bentonite and ballast: Mixtures consisting of high-grade bentonite (0, 40 and 50 w-%) and crushed rock with different type of grain size distribution or sand. The relationships between dry densities and hydraulic conductivity, swelling pressure and compressibility in saturated state for these materials were investigated. Most of the tests were performed with a groundwater salinity of 3.5%. This salinity is comparable to sea water and can be expected to be at the high end of salinities occurring during the assessment period. The purpose of the investigations was to determine the dry densities required to meet the function indicator criteria. These densities are referred to as the density criteria. However throughout the assessment period a loss of material and thus

  4. Long-term reliable physically unclonable function based on oxide tunnel barrier breakdown on two-transistors two-magnetic-tunnel-junctions cell-based embedded spin transfer torque magnetoresistive random access memory

    Science.gov (United States)

    Takaya, Satoshi; Tanamoto, Tetsufumi; Noguchi, Hiroki; Ikegami, Kazutaka; Abe, Keiko; Fujita, Shinobu

    2017-04-01

    Among the diverse applications of spintronics, security for internet-of-things (IoT) devices is one of the most important. A physically unclonable function (PUF) with a spin device (spin transfer torque magnetoresistive random access memory, STT-MRAM) is presented. Oxide tunnel barrier breakdown is used to realize long-term stability for PUFs. A secure PUF has been confirmed by evaluating the Hamming distance of a 32-bit STT-MRAM-PUF fabricated using 65 nm CMOS technology.

  5. Insulator at the ultrathin limit: MgO on Ag(001).

    Science.gov (United States)

    Schintke, S; Messerli, S; Pivetta, M; Patthey, F; Libioulle, L; Stengel, M; De Vita, A; Schneider, W D

    2001-12-31

    The electronic structure and morphology of ultrathin MgO films epitaxially grown on Ag(001) were investigated using low-temperature scanning tunneling spectroscopy and scanning tunneling microscopy. Layer-resolved differential conductance (dI/dU) measurements reveal that, even at a film thickness of three monolayers, a band gap of about 6 eV is formed corresponding to that of the MgO(001) single-crystal surface. This finding is confirmed by layer-resolved calculations of the local density of states based on density functional theory.

  6. Resonant Tunnelling in Barrier-in-Well and Well-in-Well Structures

    International Nuclear Information System (INIS)

    Jiang-Hong, Yao; Zhang-Yan; Wei-Wu, Li; Yong-Chun, Shu; Zhan-Guo, Wang; Jing-Jun, Xu; Guo-Zhi, Jia

    2008-01-01

    A Schrödinger equation is solved numerically for a barrier in a quantum well and a quantum well in another well structure by the transfer matrix technique. Effect of structure parameters on the transmission probabilities is investigated in detail. The results suggest that symmetry plays an important role in the coupling effect between the quantum wells. The relationship between the width of the inner well and the resonant energy levels in well-in-well structures is also studied. It is found that the ground state energy and the second resonant energy decrease with increasing width of the inner well, while the first resonant energy remains constant

  7. Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

    International Nuclear Information System (INIS)

    Daqiq, Reza; Ghobadi, Nader

    2016-01-01

    We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.

  8. Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

    Energy Technology Data Exchange (ETDEWEB)

    Daqiq, Reza; Ghobadi, Nader

    2016-07-15

    We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.

  9. Liquid phase mass production of air-stable black phosphorus/phospholipids nanocomposite with ultralow tunneling barrier

    Science.gov (United States)

    Zhang, Qiankun; Liu, Yinan; Lai, Jiawei; Qi, Shaomian; An, Chunhua; Lu, Yao; Duan, Xuexin; Pang, Wei; Zhang, Daihua; Sun, Dong; Chen, Jian-Hao; Liu, Jing

    2018-04-01

    Few-layer black phosphorus (FLBP), a recently discovered two-dimensional semiconductor, has attracted substantial attention in the scientific and technical communities due to its great potential in electronic and optoelectronic applications. However, reactivity of FLBP flakes with ambient species limits its direct applications. Among various methods to passivate FLBP in ambient environment, nanocomposites mixing FLBP flakes with stable matrix may be one of the most promising approaches for industry applications. Here, we report a simple one-step procedure to mass produce air-stable FLBP/phospholipids nanocomposite in liquid phase. The resultant nanocomposite is found to have ultralow tunneling barrier for charge carriers which can be described by an Efros-Shklovskii variable range hopping mechanism. Devices made from such mass-produced FLBP/phospholipids nanocomposite show highly stable electrical conductivity and opto-electrical response in ambient conditions, indicating its promising applications in both electronic and optoelectronic applications. This method could also be generalized to the mass production of nanocomposites consisting of other air-sensitive 2D materials, such as FeSe, NbSe2, WTe2, etc.

  10. Controlled fabrication of nano-scale double barrier magnetic tunnel junctions using focused ion beam milling method

    International Nuclear Information System (INIS)

    Wei, H.X.; Wang, T.X.; Zeng, Z.M.; Zhang, X.Q.; Zhao, J.; Han, X.F.

    2006-01-01

    The controlled fabrication method for nano-scale double barrier magnetic tunnel junctions (DBMTJs) with the layer structure of Ta(5)/Cu(10)/Ni 79 Fe 21 (5)/Ir 22 Mn 78 (12)/Co 6 Fe 2 B 2 (4)/Al(1) -oxide/Co 6 Fe 2 B 2 (6)/Al (1)-oxide/Co 6 Fe 2 B 2 (4)/Ir 22 Mn 78 (12)/Ni 79 Fe 21 (5)/Ta(5) (thickness unit: nm) was used. This method involved depositing thin multi-layer stacks by sputtering system, and depositing a Pt nano-pillar using a focused ion beam which acted both as a top contact and as an etching mask. The advantages of this process over the traditional process using e-beam and optical lithography in that it involve only few processing steps, e.g. it does not involve any lift-off steps. In order to evaluate the nanofabrication techniques, the DBMTJs with the dimensions of 200 nmx400 nm, 200 nmx200 nm nano-scale were prepared and their R-H, I-V characteristics were measured.

  11. Interfacial mixing in double-barrier magnetic tunnel junctions with amorphous NiFeSiB layers

    International Nuclear Information System (INIS)

    Chun, B.S.; Ko, S.P.; Hwang, J.Y.; Rhee, J.R.; Kim, T.W.; Kim, Y.K.

    2007-01-01

    Double-barrier magnetic tunnel junctions (DMTJs) comprising Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer (CoFe 4/NiFeSiB 2/CoFe 4, CoFe 10, or NiFeSiB 10)/AlO x /CoFe 7/IrMn 10/Ru 60 (nm) have been examined with an emphasis given on understanding the interfacial mixing effects. The DMTJ, consisted of NiFeSiB, shows low switching field and low bias voltage dependence because the amorphous NiFeSiB has lower M S (=800 emu/cm 3 ) and offers smoother interfaces than polycrystalline CoFe. An interesting feature observed in the CoFe/NiFeSiB/CoFe sandwich free layered DMTJ is the presence of a wavy MR transfer curve at high-resistance region. Because the polycrystalline CoFe usually grows into a columnar structure, diamagnetic CoSi, paramagnetic FeSi, and/or diamagnetic CoB might have been formed during the sputter-deposition process. By employing electron energy loss spectrometry (EELS) and Auger electron spectroscopy (AES), we were able to confirm that Si and B atoms were arranged evenly in the top and bottom portions of AlO x /CoFe interfaces. This means that the interfacial mixing resulted in a distorted magnetization reversal process

  12. Measurement and statistical analysis of single-molecule current-voltage characteristics, transition voltage spectroscopy, and tunneling barrier height.

    Science.gov (United States)

    Guo, Shaoyin; Hihath, Joshua; Díez-Pérez, Ismael; Tao, Nongjian

    2011-11-30

    We report on the measurement and statistical study of thousands of current-voltage characteristics and transition voltage spectra (TVS) of single-molecule junctions with different contact geometries that are rapidly acquired using a new break junction method at room temperature. This capability allows one to obtain current-voltage, conductance voltage, and transition voltage histograms, thus adding a new dimension to the previous conductance histogram analysis at a fixed low-bias voltage for single molecules. This method confirms the low-bias conductance values of alkanedithiols and biphenyldithiol reported in literature. However, at high biases the current shows large nonlinearity and asymmetry, and TVS allows for the determination of a critically important parameter, the tunneling barrier height or energy level alignment between the molecule and the electrodes of single-molecule junctions. The energy level alignment is found to depend on the molecule and also on the contact geometry, revealing the role of contact geometry in both the contact resistance and energy level alignment of a molecular junction. Detailed statistical analysis further reveals that, despite the dependence of the energy level alignment on contact geometry, the variation in single-molecule conductance is primarily due to contact resistance rather than variations in the energy level alignment.

  13. Deep repository - Engineered barrier system. Erosion and sealing processes in tunnel backfill materials investigated in laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Sanden, Torbjoern; Boergesson, Lennart; Dueck, Ann; Goudarzi, Reza; Loennqvist, Margareta (Clay Technology AB, Lund (Sweden))

    2008-12-15

    SKB in Sweden and Posiva in Finland are developing and plan to implement similar disposal concepts for the final disposal of spent nuclear fuel. Co-operation and joint development work between Posiva and SKB with the overall objective to develop backfill concepts and techniques for sealing and closure of the repository have been going on for several years. The investigation described in this report is intended to acquire more knowledge regarding the behavior of some of the candidate backfilling materials. Blocks made of three different materials (Friedland clay, Asha 230 or a bentonite/ballast 30/70 mixture) as well as different bentonite pellets have been examined. The backfill materials will be exposed to an environment simulating that in a tunnel, with high relative humidity and water inflow from the rock. The processes and properties investigated are: 1. Erosion properties of blocks and pellets (Friedland blocks, MX-80 pellets, Cebogel QSE pellets, Minelco and Friedland granules). 2. Displacements of blocks after emplacement in a deposition drift (Blocks of Friedland, Asha 230 and Mixture 30/70). 3. The ability of these materials to seal a leaking in-situ cast plug cement/rock but also other fractures in the rock (MX-80 pellets). 4. The self healing ability after a piping scenario (Blocks of Friedland, Asha 230 Mixture 30/70 and also MX-80 pellets). 5. Swelling and cracking of the compacted backfill blocks caused by relative humidity. The erosion properties of Friedland blocks were also investigated in Phase 2 of the joint SKBPosiva project 'Backfilling and Closure of the Deep Repository, BACLO, which included laboratory scale experiments. In this phase of the project (3) some completing tests were performed with new blocks produced for different field tests. These blocks had a lower density than intended and this has an influence on the erosion properties measured. The erosion properties of MX-80 pellets were also investigated earlier in the project but

  14. Evaluation of Schottky and MgO-based tunnelling diodes with different ferromagnets for spin injection in n-Si

    International Nuclear Information System (INIS)

    Uhrmann, T; Dimopoulos, T; Brueckl, H; Kovacs, A; Kohn, A; Weyers, S; Paschen, U; Smoliner, J

    2009-01-01

    In this work we present the electrical properties of sputter-deposited ferromagnetic (FM) Schottky diodes and MgO-based tunnelling diodes to n-doped (0 0 1) silicon. The effective Schottky barrier height (SBH) has been evaluated as a function of the FM electrode (Co 70 Fe 30 , Co 40 Fe 40 B 20 and Ni 80 Fe 20 ), the silicon doping density (10 15 to 10 18 cm -3 ), the MgO tunnelling barrier thickness (0, 1.5 and 2.5 nm) and post-deposition annealing up to 400 0 C. The ideality factors of the Schottky diodes are close to unity, indicating transport by thermionic emission and the absence of an interfacial oxide layer, which is confirmed by transmission electron microscopy. The effective SBH is found to be approximately 0.65 eV, independent of the FM material and decreasing with increasing doping density. The changes induced by high temperature annealing at the current-voltage characteristic of the Schottky diodes depend strongly on the FM electrode. The effective SBH for the tunnelling diodes is as low as 0.3 eV, which suggests a high density of oxide and interface traps. It is again independent of the FM electrode, decreasing with increasing doping density and annealing temperature. The inclusion of MgO leads to higher thermal stability of the tunnelling diodes. The measured contact resistance values are discussed with respect to the conductivity mismatch for spin injection and detection.

  15. Voltage-controlled inversion of tunnel magnetoresistance in epitaxial nickel/graphene/MgO/cobalt junctions

    Energy Technology Data Exchange (ETDEWEB)

    Godel, F.; Doudin, B.; Henry, Y.; Halley, D., E-mail: halley@ipcms.unistra.fr, E-mail: dayen@ipcms.unistra.fr; Dayen, J.-F., E-mail: halley@ipcms.unistra.fr, E-mail: dayen@ipcms.unistra.fr [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS-UdS, 23 rue du Loess, 67034 Strasbourg (France); Venkata Kamalakar, M. [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS-UdS, 23 rue du Loess, 67034 Strasbourg (France); Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg (Sweden)

    2014-10-13

    We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode. The devices show robust and scalable tunnel magnetoresistance, with several changes of sign upon varying the applied bias voltage. These findings are explained by a model of phonon-assisted transport mechanisms that relies on the peculiarity of the band structure and spin density of states at the hybrid graphene|Ni interface.

  16. Tunneling magnetoresistance from a symmetry filtering effect

    International Nuclear Information System (INIS)

    Butler, William H

    2008-01-01

    This paper provides a brief overview of the young, but rapidly growing field of spintronics. Its primary objective is to explain how as electrons tunnel through simple insulators such as MgO, wavefunctions of certain symmetries are preferentially transmitted. This symmetry filtering property can be converted into a spin-filtering property if the insulator is joined epitaxially to a ferromagnetic electrode with the same two-dimensional symmetry parallel to the interface. A second requirement of the ferromagnetic electrodes is that a wavefunction with the preferred symmetry exists in one of the two spin channels but not in the other. These requirements are satisfied for electrons traveling perpendicular to the interface for Fe-MgO-Fe tunnel barriers. This leads to a large change in the resistance when the magnetic moment of one of the electrodes is rotated relative to those of the other electrode. This large tunneling magnetoresistance effect is being used as the read sensor in hard drives and may form the basis for a new type of magnetic memory. (topical review)

  17. Physics of Gate Modulated Resonant Tunneling (RT)-FETs: Multi-barrier MOSFET for steep slope and high on-current

    Science.gov (United States)

    Afzalian, Aryan; Colinge, Jean-Pierre; Flandre, Denis

    2011-05-01

    A new concept of nanoscale MOSFET, the Gate Modulated Resonant Tunneling Transistor (RT-FET), is presented and modeled using 3D Non-Equilibrium Green's Function simulations enlightening the main physical mechanisms. Owing to the additional tunnel barriers and the related longitudinal confinement present in the device, the density of state is reduced in its off-state, while remaining comparable in its on-state, to that of a MOS transistor without barriers. The RT-FET thus features both a lower RT-limited off-current and a faster increase of the current with V G, i.e. an improved slope characteristic, and hence an improved Ion/ Ioff ratio. Such improvement of the slope can happen in subthreshold regime, and therefore lead to subthreshold slope below the kT/q limit. In addition, faster increase of current and improved slope occur above threshold and lead to high thermionic on-current and significant Ion/ Ioff ratio improvement, even with threshold voltage below 0.2 V and supply voltage V dd of a few hundreds of mV as critically needed for future technology nodes. Finally RT-FETs are intrinsically immune to source-drain tunneling and are therefore promising candidate for extending the roadmap below 10 nm.

  18. Physics of optimal resonant tunneling

    NARCIS (Netherlands)

    Racec, P.N.; Stoica, T.; Popescu, C.; Lepsa, M.I.; Roer, van de T.G.

    1997-01-01

    The optimal resonant tunneling, or the complete tunneling transparence of a biased double-barrier resonant-tunneling (DBRT) structure, is discussed. It is shown that its physics does not rest on the departure from the constant potential within the barriers and well, due to the applied electric

  19. Negative tunneling magnetoresistance of Fe/MgO/NiO/Fe magnetic tunnel junction: Role of spin mixing and interface state

    Science.gov (United States)

    Zhang, Y.; Yan, X. H.; Guo, Y. D.; Xiao, Y.

    2017-08-01

    Motivated by a recent tunneling magnetoresistance (TMR) measurement in which the negative TMR is observed in MgO/NiO-based magnetic tunnel junctions (MTJs), we have performed systematic calculations of transmission, current, and TMR of Fe/MgO/NiO/Fe MTJ with different thicknesses of NiO and MgO layers based on noncollinear density functional theory and non-equilibrium Green's function theory. The calculations show that, as the thickness of NiO and MgO layers is small, the negative TMR can be obtained which is attributed to the spin mixing effect and interface state. However, in the thick MTJ, the spin-flipping scattering becomes weaker, and thus, the MTJs recover positive TMR. Based on our theoretical results, we believe that the interface state at Fe/NiO interface and the spin mixing effect induced by noncollinear interfacial magnetization will play important role in determining transmission and current of Fe/MgO/NiO/Fe MTJ. The results reported here will be important in understanding the electron tunneling in MTJ with the barrier made by transition metal oxide.

  20. Instabilities in thin tunnel junctions

    International Nuclear Information System (INIS)

    Konkin, M.K.; Adler, J.G.

    1978-01-01

    Tunnel junctions prepared for inelastic electron tunneling spectroscopy are often plagued by instabilities in the 0-500-meV range. This paper relates the bias at which the instability occurs to the barrier thickness

  1. Modeling and optimization of a double-well double-barrier GaN/AlGaN/GaN/AlGaN resonant tunneling diode

    Science.gov (United States)

    Liu, Yang; Gao, Bo; Gong, Min; Shi, Ruiying

    2017-06-01

    The influence of a GaN layer as a sub-quantum well for an AlGaN/GaN/AlGaN double barrier resonant tunneling diode (RTD) on device performance has been investigated by means of numerical simulation. The introduction of the GaN layer as the sub-quantum well turns the dominant transport mechanism of RTD from the 3D-2D model to the 2D-2D model and increases the energy difference between tunneling energy levels. It can also lower the effective height of the emitter barrier. Consequently, the peak current and peak-to-valley current difference of RTD have been increased. The optimal GaN sub-quantum well parameters are found through analyzing the electrical performance, energy band, and transmission coefficient of RTD with different widths and depths of the GaN sub-quantum well. The most pronounced electrical parameters, a peak current density of 5800 KA/cm2, a peak-to-valley current difference of 1.466 A, and a peak-to-valley current ratio of 6.35, could be achieved by designing RTD with the active region structure of GaN/Al0.2Ga0.8 N/GaN/Al0.2Ga0.8 N (3 nm/1.5 nm/1.5 nm/1.5 nm).

  2. Effect of an interface Mg insertion layer on the reliability of a magnetic tunnel junction based on a Co{sub 2}FeAl full-Heusler alloy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jungmin; Kil, Gyuhyun; Lee, Gaehun; Choi, Chulmin; Song, Yunheub [Hanyang University, Seoul (Korea, Republic of); Sukegawa, Hiroaki; Mitani, Seiji [National Institute for Materials Science, Ibaraki (Japan)

    2014-04-15

    The reliability of a magnetic tunnel junction (MTJ) based on a Co{sub 2}FeAl (CFA) full-Heusler alloy with a MgO tunnel barrier was evaluated. In particular, the effect of a Mg insertion layer under the MgO was investigated in view of resistance drift by using various voltage stress tests. We compared the resistance change during constant voltage stress (CVS) and confirmed a trap/detrap phenomenon during the interval stress test for samples with and without a Mg insertion layer. The MTJ with a Mg insertion layer showed a relatively small resistance change for the CVS test and a reduced trap/detrap phenomenon for the interval stress test compared to the sample without a Mg insertion layer. This is understood to be caused by the improved crystallinity at the bottom of the CFA/MgO interface due to the Mg insertion layer, which provides a smaller number of trap site during the stress test. As a result, the interface condition of the MgO layer is very important for the reliability of a MTJ using a full-Heusler alloy, and the the insert of a Mg layer at the MgO interface is expected to be an effective method for enhancing the reliability of a MTJ.

  3. Influence of pairing correlations on the probability and dynamics of tunneling through the barrier in fission and fusion of complex nuclei

    International Nuclear Information System (INIS)

    Lazarev, Yu.A.

    1986-01-01

    An analytically solvable model is used to study the potential barrier penetrability in the case when the gap parameter Δ is treated as a dynamical variable governed by the least action principle. It is found that, as compared to the standard (BCS) approach, the dynamical treatment of pairing results in a considerably weakened dependence of the fission barrier penetrability on the intensity of pairing correlations in the initial state (Δ 0 ), on the barrier height, and on the energy of the initial state. On this basis, a more adequate explanation is proposed for typical order-of-magnitude values of the empirical hidrance factors for groun-state spontaneous fission of odd nuclei. It is also shown that a large enhancement of superfluidity in tunneling - the inherent effect of the dynamical treatment of pairing - strongly facilitates deeply subbarier fusion of complex nuclei. Finally, an analysis is given for the probability of spontaneous fission from K-isomeric quasiparticle (q-p) states in even-even heavy nuclei. The relative change of the partial spontaneous fission half-life in going from the ground-state to a high-spin q-p isomeric state, T* sf /T sf , is found to be strongly dependent on whether or not there takes place the dynamically induced enhancement of superfluidity in tunneling. Measurements of T* sf /T sf provide thus a unique possibility of verifying theoretical predictions about the strong, inverse-square Δ dependence of the effective inertia associated with large-scale subbarrier rearrangements of nuclei

  4. Quantum tunneling time

    International Nuclear Information System (INIS)

    Wang, Z.S.; Lai, C.H.; Oh, C.H.; Kwek, L.C.

    2004-01-01

    We present a calculation of quantum tunneling time based on the transition duration of wave peak from one side of a barrier to the other. In our formulation, the tunneling time comprises a real and an imaginary part. The real part is an extension of the phase tunneling time with quantum corrections whereas the imaginary time is associated with energy derivatives of the probability amplitudes

  5. About tunnelling times

    International Nuclear Information System (INIS)

    Olkhovsky, V.S.; Recami, E.

    1991-08-01

    In this paper, first we critically analyse the main theoretical definitions and calculations of the sub-barrier tunnelling and reflection times. Secondly, we propose a new, physically sensible definition of such durations, on the basis of a recent general formalism (already tested for other types of quantum collisions). At last, we discuss some results regarding temporal evolution of the tunnelling processes, and in particular the ''particle'' speed during tunnelling. (author). 36 refs, 1 fig

  6. Adsorption and dissociation of dinitrogen on transition metal (Ta, W and Re) doped MgO surface

    KAUST Repository

    Yadav, Manoj Kumar

    2016-06-16

    The adsorption and dissociation of dinitrogen on transition metal (Ta, W and Re) doped MgO(100) surface has been studied employing density functional theory. It is found that all these transition metals (TM) on MgO(100) surface are capable of adsorbing dinitrogen (N2), however there is no dissociative adsorption of N2 on single transition metal dopant. When two TM atoms are doped on MgO(100) surface, dissociative adsorption of dinitrogen occurs in all the three cases. Whether the dissociation is spontaneous or is it associated with activation barrier depends on the orientation of N2 molecule approaching the dopant site.

  7. Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control

    Science.gov (United States)

    Hayakawa, Naoki; Muneta, Iriya; Ohashi, Takumi; Matsuura, Kentaro; Shimizu, Jun’ichi; Kakushima, Kuniyuki; Tsutsui, Kazuo; Wakabayashi, Hitoshi

    2018-04-01

    Molybdenum disulfide (MoS2) among two-dimensional semiconductor films is promising for spintronic devices because it has a longer spin-relaxation time with contrasting spin splitting than silicon. However, it is difficult to fabricate integrated circuits by the widely used exfoliation method. Here, we investigate the contact characteristics in the Fe/Al2O3/sputtered-MoS2 system with various thicknesses of the Al2O3 film. Current density increases with increasing thickness up to 2.5 nm because of both thermally-assisted and direct tunneling currents. On the other hand, it decreases with increasing thickness over 2.5 nm limited by direct tunneling currents. These results suggest that the Schottky barrier width can be controlled by changing thicknesses of the Al2O3 film, as supported by calculations. The reduction of conductance mismatch with this technique can lead to highly efficient spin injection from iron into the MoS2 film.

  8. Transport properties of Josephson contacts with ferromagnetic tunnel barriers; Transporteigenschaften von Josephson-Kontakten mit ferromagnetischer Tunnelbarriere

    Energy Technology Data Exchange (ETDEWEB)

    Sprungmann, Dirk

    2010-01-28

    The combination of the Josephson and the proximity effect is possible by the introduction of a ferromagnetic barrier into a Josephson contact resulting in a so called π coupling. The supra current through these contacts is flowing in the reverse direction. Specific new electronic circuits such as phase shifting devices are possible, for instance for high-speed analog-digital transducers. In the frame of this thesis SIFS Josephson contacts were studied, with a barrier consisting of a thin insulating Al2Ox barrier layer and a ferromagnetic thin film. For the ferromagnetic material weak ferromagnetic Ni(0.6)Cu(0.4), the strong ferromagnetic Fe(0.25)Co(0.75) and the ternary Heusler alloys Co2MnSn and Cu2MnAl were used. Josephson contacts with π coupling were realized with the NiCu alloy, triplet superconductivity seems to appear with the Heusler systems.

  9. TOPICAL REVIEW: Tunneling magnetoresistance from a symmetry filtering effect

    Directory of Open Access Journals (Sweden)

    William H Butler

    2008-01-01

    Full Text Available This paper provides a brief overview of the young, but rapidly growing field of spintronics. Its primary objective is to explain how as electrons tunnel through simple insulators such as MgO, wavefunctions of certain symmetries are preferentially transmitted. This symmetry filtering property can be converted into a spin-filtering property if the insulator is joined epitaxially to a ferromagnetic electrode with the same two-dimensional symmetry parallel to the interface. A second requirement of the ferromagnetic electrodes is that a wavefunction with the preferred symmetry exists in one of the two spin channels but not in the other. These requirements are satisfied for electrons traveling perpendicular to the interface for Fe–MgO–Fe tunnel barriers. This leads to a large change in the resistance when the magnetic moment of one of the electrodes is rotated relative to those of the other electrode. This large tunneling magnetoresistance effect is being used as the read sensor in hard drives and may form the basis for a new type of magnetic memory.

  10. The Ehrlich-Schwoebel barrier on an oxide surface: a combined Monte-Carlo and in situ scanning tunneling microscopy approach.

    Science.gov (United States)

    Gianfrancesco, Anthony G; Tselev, Alexander; Baddorf, Arthur P; Kalinin, Sergei V; Vasudevan, Rama K

    2015-11-13

    The controlled growth of epitaxial films of complex oxides requires an atomistic understanding of key parameters determining final film morphology, such as termination dependence on adatom diffusion, and height of the Ehrlich-Schwoebel (ES) barrier. Here, through an in situ scanning tunneling microscopy study of mixed-terminated La5/8Ca3/8MnO3 (LCMO) films, we image adatoms and observe pile-up at island edges. Image analysis allows determination of the population of adatoms at the edge of islands and fractions on A-site and B-site terminations. A simple Monte-Carlo model, simulating the random walk of adatoms on a sinusoidal potential landscape using Boltzmann statistics is used to reproduce the experimental data, and provides an estimate of the ES barrier as ∼0.18 ± 0.04 eV at T = 1023 K, similar to those of metal adatoms on metallic surfaces. These studies highlight the utility of in situ imaging, in combination with basic Monte-Carlo methods, in elucidating the factors which control the final film growth in complex oxides.

  11. The Ehrlich–Schwoebel barrier on an oxide surface: a combined Monte-Carlo and in situ scanning tunneling microscopy approach

    International Nuclear Information System (INIS)

    Gianfrancesco, Anthony G; Tselev, Alexander; Baddorf, Arthur P; Kalinin, Sergei V; Vasudevan, Rama K

    2015-01-01

    The controlled growth of epitaxial films of complex oxides requires an atomistic understanding of key parameters determining final film morphology, such as termination dependence on adatom diffusion, and height of the Ehrlich–Schwoebel (ES) barrier. Here, through an in situ scanning tunneling microscopy study of mixed-terminated La_5_/_8Ca_3_/_8MnO_3 (LCMO) films, we image adatoms and observe pile-up at island edges. Image analysis allows determination of the population of adatoms at the edge of islands and fractions on A-site and B-site terminations. A simple Monte-Carlo model, simulating the random walk of adatoms on a sinusoidal potential landscape using Boltzmann statistics is used to reproduce the experimental data, and provides an estimate of the ES barrier as ∼0.18 ± 0.04 eV at T = 1023 K, similar to those of metal adatoms on metallic surfaces. These studies highlight the utility of in situ imaging, in combination with basic Monte-Carlo methods, in elucidating the factors which control the final film growth in complex oxides. (paper)

  12. The Ehrlich-Schwoebel barrier on an oxide surface: a combined Monte-Carlo and in situ scanning tunneling microscopy approach

    Science.gov (United States)

    Gianfrancesco, Anthony G.; Tselev, Alexander; Baddorf, Arthur P.; Kalinin, Sergei V.; Vasudevan, Rama K.

    2015-11-01

    The controlled growth of epitaxial films of complex oxides requires an atomistic understanding of key parameters determining final film morphology, such as termination dependence on adatom diffusion, and height of the Ehrlich-Schwoebel (ES) barrier. Here, through an in situ scanning tunneling microscopy study of mixed-terminated La5/8Ca3/8MnO3 (LCMO) films, we image adatoms and observe pile-up at island edges. Image analysis allows determination of the population of adatoms at the edge of islands and fractions on A-site and B-site terminations. A simple Monte-Carlo model, simulating the random walk of adatoms on a sinusoidal potential landscape using Boltzmann statistics is used to reproduce the experimental data, and provides an estimate of the ES barrier as ˜0.18 ± 0.04 eV at T = 1023 K, similar to those of metal adatoms on metallic surfaces. These studies highlight the utility of in situ imaging, in combination with basic Monte-Carlo methods, in elucidating the factors which control the final film growth in complex oxides.

  13. Thermal conductivity of thin insulating films determined by tunnel magneto-Seebeck effect measurements and finite-element modeling

    Science.gov (United States)

    Huebner, Torsten; Martens, Ulrike; Walowski, Jakob; Münzenberg, Markus; Thomas, Andy; Reiss, Günter; Kuschel, Timo

    2018-06-01

    In general, it is difficult to access the thermal conductivity of thin insulating films experimentally by electrical means. Here, we present a new approach utilizing the tunnel magneto-Seebeck effect (TMS) in combination with finite-element modeling (FEM). We detect the laser-induced TMS and the absolute thermovoltage of laser-heated magnetic tunnel junctions with 2.6 nm thin barriers of MgAl2O4 (MAO) and MgO, respectively. A second measurement of the absolute thermovoltage after a dielectric breakdown of the barrier grants insight into the remaining thermovoltage of the stack. Thus, the pure TMS without any parasitic Nernst contributions from the leads can be identified. In combination with FEM via COMSOL, we are able to extract values for the thermal conductivity of MAO (0.7 W (K · m)‑1) and MgO (5.8 W (K · m)‑1), which are in very good agreement with theoretical predictions. Our method provides a new promising way to extract the experimentally challenging parameter of the thermal conductivity of thin insulating films.

  14. Tunneling of Atoms, Nuclei and Molecules

    International Nuclear Information System (INIS)

    Bertulani, C.A.

    2015-01-01

    This is a brief review of few relevant topics on tunneling of composite particles and how the coupling to intrinsic and external degrees of freedom affects tunneling probabilities. I discuss the phenomena of resonant tunneling, different barriers seen by subsystems, damping of resonant tunneling by level bunching and continuum effects due to particle dissociation. (author)

  15. Interplay between barrier width and height in electron tunneling: photoinduced electron transfer in porphyrin-based donor-bridge-acceptor systems.

    Science.gov (United States)

    Pettersson, Karin; Wiberg, Joanna; Ljungdahl, Thomas; Mårtensson, Jerker; Albinsson, Bo

    2006-01-12

    The rate of electron tunneling in molecular donor-bridge-acceptor (D-B-A) systems is determined both by the tunneling barrier width and height, that is, both by the distance between the donor and acceptor as well as by the energy gap between the donor and bridge moieties. These factors are therefore important to control when designing functional electron transfer systems, such as constructs for photovoltaics, artificial photosynthesis, and molecular scale electronics. In this paper we have investigated a set of D-B-A systems in which the distance and the energy difference between the donor and bridge states (DeltaEDB) are systematically varied. Zinc(II) and gold(III) porphyrins were chosen as electron donor and acceptor because of their suitable driving force for photoinduced electron transfer (-0.9 eV in butyronitrile) and well-characterized photophysics. We have previously shown, in accordance with the superexchange mechanism for electron transfer, that the electron transfer rate is proportional to the inverse of DeltaEDB in a series of zinc/gold porphyrin D-B-A systems with bridges of constant edge to edge distance (19.6 A) and varying DeltaEDB (3900-17 600 cm(-1)). Here, we use the same donor and acceptor but the bridge is shortened or extended giving a set of oligo-p-phenyleneethynylene bridges (OPE) with four different edge to edge distances ranging from 12.7 to 33.4 A. These two sets of D-B-A systems-ZnP-RB-AuP+ and ZnP-nB-AuP+-have one bridge in common, and hence, for the first time both the distance and DeltaEDB dependence of electron transfer can be studied simultaneously in a systematic way.

  16. Effect of Low-Frequency AC Magnetic Susceptibility and Magnetic Properties of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

    Directory of Open Access Journals (Sweden)

    Yuan-Tsung Chen

    2014-01-01

    Full Text Available In this investigation, the low-frequency alternate-current (AC magnetic susceptibility (χac and hysteresis loop of various MgO thickness in CoFeB/MgO/CoFeB magnetic tunneling junction (MTJ determined coercivity (Hc and magnetization (Ms and correlated that with χac maxima. The multilayer films were sputtered onto glass substrates and the thickness of intermediate barrier MgO layer was varied from 6 to 15 Å. An experiment was also performed to examine the variation of the highest χac and maximum phase angle (θmax at the optimal resonance frequency (fres, at which the spin sensitivity is maximal. The results reveal that χac falls as the frequency increases due to the relationship between magnetization and thickness of the barrier layer. The maximum χac is at 10 Hz that is related to the maximal spin sensitivity and that this corresponds to a MgO layer of 11 Å. This result also suggests that the spin sensitivity is related to both highest χac and maximum phase angle. The corresponding maximum of χac is related to high exchange coupling. High coercivity and saturation magnetization contribute to high exchange-coupling χac strength.

  17. Tunneling with dissipation in open quantum systems

    International Nuclear Information System (INIS)

    Adamyan, G.G.; Antonenko, N.V.; Scheid, W.

    1997-01-01

    Based on the general form of the master equation for open quantum systems the tunneling is considered. Using the path integral technique a simple closed form expression for the tunneling rate through a parabolic barrier is obtained. The tunneling in the open quantum systems strongly depends on the coupling with environment. We found the cases when the dissipation prohibits tunneling through the barrier but decreases the crossing of the barrier for the energies above the barrier. As a particular application, the case of decay from the metastable state is considered

  18. Electronic tunneling currents at optical frequencies

    Science.gov (United States)

    Faris, S. M.; Fan, B.; Gustafson, T. K.

    1975-01-01

    Rectification characteristics of nonsuperconducting metal-barrier-metal junctions as deduced from electronic tunneling theory have been observed experimentally for optical frequency irradiation of the junction.

  19. Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7−δ/BaTiO3 bilayers for application in tunnel junctions

    International Nuclear Information System (INIS)

    Navarro, H.; Sirena, M.; Haberkorn, N.; Yang, Ilkyu; Kim, Jeehoon

    2015-01-01

    The optimization of the superconducting properties in a bottom electrode and the quality of an insulator barrier are the first steps in the development of superconductor/insulator/superconductor tunnel junctions. Here, we study the quality of a BaTiO 3 tunnel barrier deposited on a 16 nm thick GdBa 2 Cu 3 O 7−δ thin film by using conductive atomic force microscopy. We find that the tunnel current is systematically reduced (for equal applied voltage) by increasing the BaTiO 3 barrier thickness between 1.6 and 4 nm. The BaTiO 3 layers present an energy barrier of ≈1.2 eV and an attenuation length of 0.35–0.5 nm (depending on the applied voltage). The GdBa 2 Cu 3 O 7−δ electrode is totally covered by a BaTiO 3 thickness above 3 nm. The presence of ferroelectricity was verified by piezoresponse force microscopy for a 4 nm thick BaTiO 3 top layer. The superconducting transition temperature of the bilayers is systematically suppressed by increasing the BaTiO 3 thickness. This fact can be associated with stress at the interface and a reduction of the orthorhombicity of the GdBa 2 Cu 3 O 7−δ . The reduction in the orthorhombicity is expected by considering the interface mismatch and it can also be affected by reduced oxygen stoichiometry (poor oxygen diffusion across the BaTiO 3 barrier)

  20. Characterization of the insulator barrier and the superconducting transition temperature in GdBa{sub 2}Cu{sub 3}O{sub 7−δ}/BaTiO{sub 3} bilayers for application in tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Navarro, H., E-mail: henrynavarro@cab.cnea.gov.ar; Sirena, M.; Haberkorn, N. [Instituto Balseiro, Universidad Nacional de Cuyo and CNEA, 8400 Bariloche (Argentina); Centro Atómico Bariloche, Comisión Nacional de Energía Atómica. Av. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina); Yang, Ilkyu [Department of Physics, Pohang University of Science and Technology, Pohang (Korea, Republic of); Kim, Jeehoon [Department of Physics, Pohang University of Science and Technology, Pohang (Korea, Republic of); CALDES, Institute for Basic Science, Pohang (Korea, Republic of)

    2015-07-28

    The optimization of the superconducting properties in a bottom electrode and the quality of an insulator barrier are the first steps in the development of superconductor/insulator/superconductor tunnel junctions. Here, we study the quality of a BaTiO{sub 3} tunnel barrier deposited on a 16 nm thick GdBa{sub 2}Cu{sub 3}O{sub 7−δ} thin film by using conductive atomic force microscopy. We find that the tunnel current is systematically reduced (for equal applied voltage) by increasing the BaTiO{sub 3} barrier thickness between 1.6 and 4 nm. The BaTiO{sub 3} layers present an energy barrier of ≈1.2 eV and an attenuation length of 0.35–0.5 nm (depending on the applied voltage). The GdBa{sub 2}Cu{sub 3}O{sub 7−δ} electrode is totally covered by a BaTiO{sub 3} thickness above 3 nm. The presence of ferroelectricity was verified by piezoresponse force microscopy for a 4 nm thick BaTiO{sub 3} top layer. The superconducting transition temperature of the bilayers is systematically suppressed by increasing the BaTiO{sub 3} thickness. This fact can be associated with stress at the interface and a reduction of the orthorhombicity of the GdBa{sub 2}Cu{sub 3}O{sub 7−δ}. The reduction in the orthorhombicity is expected by considering the interface mismatch and it can also be affected by reduced oxygen stoichiometry (poor oxygen diffusion across the BaTiO{sub 3} barrier)

  1. Tunneling anisotropic magnetoresistance in Co/AIOx/Al tunnel junctions with fcc Co (111) electrodes

    NARCIS (Netherlands)

    Wang, Kai; Tran, T. Lan Ahn; Brinks, Peter; Brinks, P.; Sanderink, Johannes G.M.; Bolhuis, Thijs; van der Wiel, Wilfred Gerard; de Jong, Machiel Pieter

    2013-01-01

    Tunneling anisotropic magnetoresistance (TAMR) has been characterized in junctions comprised of face-centered cubic (fcc) Co (111) ferromagnetic electrodes grown epitaxially on sapphire substrates, amorphous AlOx tunnel barriers, and nonmagnetic Al counterelectrodes. Large TAMR ratios have been

  2. Normal-state conductance used to probe superconducting tunnel junctions for quantum computing

    Energy Technology Data Exchange (ETDEWEB)

    Chaparro, Carlos; Bavier, Richard; Kim, Yong-Seung; Kim, Eunyoung; Oh, Seongshik [Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, NJ 08854 (United States); Kline, Jeffrey S; Pappas, David P, E-mail: carlosch@physics.rutgers.ed, E-mail: ohsean@physics.rutgers.ed [National Institute of Standards and Technology, Boulder, CO 80305 (United States)

    2010-04-15

    Here we report normal-state conductance measurements of three different types of superconducting tunnel junctions that are being used or proposed for quantum computing applications: p-Al/a-AlO/p-Al, e-Re/e-AlO/p-Al, and e-V/e-MgO/p-V, where p stands for polycrystalline, e for epitaxial, and a for amorphous. All three junctions exhibited significant deviations from the parabolic behavior predicted by the WKB approximation models. In the p-Al/a-AlO/p-Al junction, we observed enhancement of tunneling conductances at voltages matching harmonics of Al-O stretching modes. On the other hand, such Al-O vibration modes were missing in the epitaxial e-Re/e-AlO/p-Al junction. This suggests that absence or existence of the Al-O stretching mode might be related to the crystallinity of the AlO tunnel barrier and the interface between the electrode and the barrier. In the e-V/e-MgO/p-V junction, which is one of the candidate systems for future superconducting qubits, we observed suppression of the density of states at zero bias. This implies that the interface is electronically disordered, presumably due to oxidation of the vanadium surface underneath the MgO barrier, even if the interface was structurally well ordered, suggesting that the e-V/e-MgO/p-V junction will not be suitable for qubit applications in its present form. This also demonstrates that the normal-state conductance measurement can be effectively used to screen out low quality samples in the search for better superconducting tunnel junctions.

  3. Thermovoltages in vacuum tunneling investigated by scanning tunneling microscopy

    OpenAIRE

    Hoffmann, D. H.; Rettenberger, Armin; Grand, Jean Yves; Läuger, K.; Leiderer, Paul; Dransfeld, Klaus; Möller, Rolf

    1995-01-01

    By heating the tunneling tip of a scanning tunneling microscope the thermoelectric properties of a variable vacuum barrier have been investigated. The lateral variation of the observed thermovoltage will be discussed for polycrystalline gold, stepped surfaces of silver, as well as for copper islands on silver.

  4. The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature

    Directory of Open Access Journals (Sweden)

    Z. H. Zhang

    2015-03-01

    Full Text Available The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 to 290.1 K. The resistance current dependence of the MTJ was also measured for different angles between the two ferromagnetic layers. By considering particle and angular momentum conservation of transport electrons, the current dependence of magnetoresistance can be explained by the changing of spin polarization in the free magnetic layer of the MTJ. The changing of spin polarization is related to the magnetoresistance, its angular dependence and the threshold current where TMR ratio equals zero. A phenomenological model is used which avoid the complicated barrier details and also describes the data.

  5. Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers

    Science.gov (United States)

    Chang, Y. Austin; Yang, Jianhua Joshua

    2008-11-11

    This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

  6. Sign change in the tunnel magnetoresistance of Fe3O4/MgO/Co-Fe-B magnetic tunnel junctions depending on the annealing temperature and the interface treatment

    Directory of Open Access Journals (Sweden)

    L. Marnitz

    2015-04-01

    Full Text Available Magnetite (Fe3O4 is an eligible candidate for magnetic tunnel junctions (MTJs since it shows a high spin polarization at the Fermi level as well as a high Curie temperature of 585°C. In this study, Fe3O4/MgO/Co-Fe-B MTJs were manufactured. A sign change in the TMR is observed after annealing the MTJs at temperatures between 200°C and 280°C. Our findings suggest an Mg interdiffusion from the MgO barrier into the Fe3O4 as the reason for the change of the TMR. Additionally, different treatments of the magnetite interface (argon bombardment, annealing at 200°C in oxygen atmosphere during the preparation of the MTJs have been studied regarding their effect on the performance of the MTJs. A maximum TMR of up to -12% could be observed using both argon bombardment and annealing in oxygen atmosphere, despite exposing the magnetite surface to atmospheric conditions before the deposition of the MgO barrier.

  7. Hydrogen-atom tunneling through a very high barrier; spontaneous thiol → thione conversion in thiourea isolated in low-temperature Ar, Ne, H2 and D2 matrices.

    Science.gov (United States)

    Rostkowska, Hanna; Lapinski, Leszek; Nowak, Maciej J

    2018-05-23

    Spontaneous thiol → thione hydrogen-atom transfer has been investigated for molecules of thiourea trapped in Ar, Ne, normal-H2 (n-H2) and normal-D2 (n-D2) low-temperature matrices. The most stable thione isomer was the only form of the compound present in the matrices after their deposition. According to MP2/6-311++G(2d,p) calculations, the thiol tautomer should be higher in energy by 62.5 kJ mol-1. This less stable thiol form of the compound was photochemically generated in a thione → thiol process, occurring upon UV irradiation of the matrix. Subsequently, a very slow spontaneous conversion of the thiol tautomer into the thione form was observed for the molecules isolated in Ar, Ne, n-H2 and n-D2 matrices kept at 3.5 K and in the dark. Since the thiol → thione transformation in thiourea is a process involving the dissociation of a chemical bond, the barrier for this hydrogen-atom transfer is very high (104-181 kJ mol-1). Crossing such a high potential-energy barrier at a temperature as low as 3.5 K, is possible only by hydrogen-atom tunneling. The experimentally measured time constants of this tunneling process: 52 h (Ar), 76 h (Ne), 94 h (n-H2) and 94 h (n-D2), do not differ much from one another. Hence, the dependence of the tunneling rate on the matrix environment is not drastic. The progress of the thiol → thione conversion was also monitored for Ar matrices at different temperature: 3.5 K, 9 K and 15 K. For this temperature range, the experiments revealed no detectable temperature dependence of the rate of the tunneling process.

  8. Quantum tunneling with friction

    Science.gov (United States)

    Tokieda, M.; Hagino, K.

    2017-05-01

    Using the phenomenological quantum friction models introduced by P. Caldirola [Nuovo Cimento 18, 393 (1941), 10.1007/BF02960144] and E. Kanai [Prog. Theor. Phys. 3, 440 (1948), 10.1143/ptp/3.4.440], M. D. Kostin [J. Chem. Phys. 57, 3589 (1972), 10.1063/1.1678812], and K. Albrecht [Phys. Lett. B 56, 127 (1975), 10.1016/0370-2693(75)90283-X], we study quantum tunneling of a one-dimensional potential in the presence of energy dissipation. To this end, we calculate the tunneling probability using a time-dependent wave-packet method. The friction reduces the tunneling probability. We show that the three models provide similar penetrabilities to each other, among which the Caldirola-Kanai model requires the least numerical effort. We also discuss the effect of energy dissipation on quantum tunneling in terms of barrier distributions.

  9. Proximity-effect and tunneling in YBa2Cu3O7/metal layered structures

    International Nuclear Information System (INIS)

    Greene, L.H.; Feldmann, W.L.; Barner, J.B.; Farrow, L.A.; Miceli, P.F.; Ramesh, R.; Wilkens, B.J.; Bagley, B.G.; Giroud, M.; Rowell, J.M.

    1990-01-01

    Superconducting thin films of YBa 2 Cu 3 O 7 are prepared in-situ by on-axis sputter deposition from a single, composite target. The planar magnetron target composition of YBa:Cu = 1.08:1.76:4.5 sputtered onto MgO at T ∼ 750 degrees C in a 600 mTorr Ar-O 2 atmosphere yields reproducible superconducting films having T c (R = 0) > 80 K and stoichiometry 1:2:3, that are shiny and of near epitaxial crystalline quality. In order to ensure clean interfaces, YBa 2 Cu 3 O 7 /normal metal bilayers (to form SNS' Josephson junctions) and YBa 2 Cu 3 O 7 /normal metal/insulating barrier trilayers (to form SNIS' proximity tunnel junctions) are grown completely in-situ. (The S' = Pb counter electrode is evaporated ex-situ.) A supercurrent and Shapiro steps are observed in microwave irradiated SNS' (N = Ag) small area (5 x 10 -5 cm 2 junctions. In SNIS' tunnel junctions, high-quality Pb tunnelling is observed

  10. Ultrafast scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Botkin, D.A. [California Univ., Berkeley, CA (United States). Dept. of Physics]|[Lawrence Berkeley Lab., CA (United States)

    1995-09-01

    I have developed an ultrafast scanning tunneling microscope (USTM) based on uniting stroboscopic methods of ultrafast optics and scanned probe microscopy to obtain nanometer spatial resolution and sub-picosecond temporal resolution. USTM increases the achievable time resolution of a STM by more than 6 orders of magnitude; this should enable exploration of mesoscopic and nanometer size systems on time scales corresponding to the period or decay of fundamental excitations. USTM consists of a photoconductive switch with subpicosecond response time in series with the tip of a STM. An optical pulse from a modelocked laser activates the switch to create a gate for the tunneling current, while a second laser pulse on the sample initiates a dynamic process which affects the tunneling current. By sending a large sequence of identical pulse pairs and measuring the average tunnel current as a function of the relative time delay between the pulses in each pair, one can map the time evolution of the surface process. USTM was used to measure the broadband response of the STM`s atomic size tunnel barrier in frequencies from tens to hundreds of GHz. The USTM signal amplitude decays linearly with the tunnel junction conductance, so the spatial resolution of the time-resolved signal is comparable to that of a conventional STM. Geometrical capacitance of the junction does not appear to play an important role in the measurement, but a capacitive effect intimately related to tunneling contributes to the measured signals and may limit the ultimate resolution of the USTM.

  11. Apparent tunneling in chemical reactions

    DEFF Research Database (Denmark)

    Henriksen, Niels Engholm; Hansen, Flemming Yssing; Billing, G. D.

    2000-01-01

    A necessary condition for tunneling in a chemical reaction is that the probability of crossing a barrier is non-zero, when the energy of the reactants is below the potential energy of the barrier. Due to the non-classical nature (i.e, momentum uncertainty) of vibrational states this is, however......, not a sufficient condition in order to establish genuine tunneling as a result of quantum dynamics. This proposition is illustrated for a two-dimensional model potential describing dissociative sticking of N-2 on Ru(s). It is suggested that the remarkable heavy atom tunneling, found in this system, is related...

  12. Tunneling Ionization of Diatomic Molecules

    DEFF Research Database (Denmark)

    Svensmark, Jens Søren Sieg

    2016-01-01

    When a molecule is subject to a strong laser field, there is a probability that an electron can escape, even though the electrons are bound by a large potential barrier. This is possible because electrons are quantum mechanical in nature, and they are therefore able to tunnel through potential...... barriers, an ability classical particles do not possess. Tunnelling is a fundamental quantum mechanical process, a process that is distinctly non-classical, so solving this tunnelling problem is not only relevant for molecular physics, but also for quantum theory in general. In this dissertation the theory...... of tunneling ionizaion of molecules is presented and the results of numerical calculations are shown. One perhaps surprising result is, that the frequently used Born-Oppenheimer approximation breaks down for weak fields when describing tunneling ionization. An analytic theory applicable in the weak-field limit...

  13. Hydrodynamic optical soliton tunneling

    Science.gov (United States)

    Sprenger, P.; Hoefer, M. A.; El, G. A.

    2018-03-01

    A notion of hydrodynamic optical soliton tunneling is introduced in which a dark soliton is incident upon an evolving, broad potential barrier that arises from an appropriate variation of the input signal. The barriers considered include smooth rarefaction waves and highly oscillatory dispersive shock waves. Both the soliton and the barrier satisfy the same one-dimensional defocusing nonlinear Schrödinger (NLS) equation, which admits a convenient dispersive hydrodynamic interpretation. Under the scale separation assumption of nonlinear wave (Whitham) modulation theory, the highly nontrivial nonlinear interaction between the soliton and the evolving hydrodynamic barrier is described in terms of self-similar, simple wave solutions to an asymptotic reduction of the Whitham-NLS partial differential equations. One of the Riemann invariants of the reduced modulation system determines the characteristics of a soliton interacting with a mean flow that results in soliton tunneling or trapping. Another Riemann invariant yields the tunneled soliton's phase shift due to hydrodynamic interaction. Soliton interaction with hydrodynamic barriers gives rise to effects that include reversal of the soliton propagation direction and spontaneous soliton cavitation, which further suggest possible methods of dark soliton control in optical fibers.

  14. MgO nanoparticles as antibacterial agent: preparation and activity

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Zhen-Xing, E-mail: tangzhenxing@126.com [Department of Food Science, Anqing, Vocational and Technical College, Anqing, Anhui (China); Lv, Bin-Feng [Date Palm Research Center, King Faisal University, (Saudi Arabia)

    2014-07-15

    Bacterial pollution is a great risk for human health. Nanotechnology offers a way to develop new inorganic antibacterial agents. Nano-inorganic metal oxide has a potential to reduce bacterial contamination. MgO is an important inorganic oxide and has been widely used in many fields. Many studies have shown that MgO nanoparticles have good antibacterial activity. Therefore, in this paper, the main synthesis methods, antibacterial activity and antibacterial mechanisms of MgO nanoparticles are reviewed. (author)

  15. MgO nanoparticles as antibacterial agent: preparation and activity

    International Nuclear Information System (INIS)

    Tang, Zhen-Xing; Lv, Bin-Feng

    2014-01-01

    Bacterial pollution is a great risk for human health. Nanotechnology offers a way to develop new inorganic antibacterial agents. Nano-inorganic metal oxide has a potential to reduce bacterial contamination. MgO is an important inorganic oxide and has been widely used in many fields. Many studies have shown that MgO nanoparticles have good antibacterial activity. Therefore, in this paper, the main synthesis methods, antibacterial activity and antibacterial mechanisms of MgO nanoparticles are reviewed. (author)

  16. Thermally assisted interlayer magnetic coupling through Ba_0_._0_5Sr_0_._9_5TiO_3 barriers

    International Nuclear Information System (INIS)

    Carreira, Santiago J.; Steren, Laura B.; Avilés Félix, Luis; Alejandro, Gabriela; Sirena, Martín

    2016-01-01

    We report on the interlayer exchange coupling across insulating barriers observed on Ni_8_0Fe_2_0/Ba_0_._0_5Sr_0_._9_5TiO_3/La_0_._6_6Sr_0_._3_3MnO_3 (Py/BST_0_._0_5/LSMO) trilayers. The coupling mechanism has been analyzed in terms of the barrier thickness, samples' substrate, and temperature. We examined the effect of MgO (MGO) and SrTiO_3 (STO) (001) single-crystalline substrates on the magnetic coupling and also on the magnetic anisotropies of the samples in order to get a deeper understanding of the magnetism of the structures. We measured a weak coupling mediated by spin-dependent tunneling phenomena whose sign and strength depend on barrier thickness and substrate. An antiferromagnetic (AF) exchange prevails for most of the samples and smoothly increases with the barrier thicknesses as a consequence of the screening effects of the BST_0_._0_5. The coupling monotonically increases with temperature in all the samples and this behavior is attributed to thermally assisted mechanisms. The magnetic anisotropy of both magnetic components has a cubic symmetry that in the case of permalloy is added to a small uniaxial component.

  17. Thermally assisted interlayer magnetic coupling through Ba{sub 0.05}Sr{sub 0.95}TiO{sub 3} barriers

    Energy Technology Data Exchange (ETDEWEB)

    Carreira, Santiago J.; Steren, Laura B. [Centro Atómico Constituyentes, San Martín, Buenos Aires 1650 (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas, Ciudad Autonoma de Buenos Aires C1425FQB (Argentina); Avilés Félix, Luis; Alejandro, Gabriela [Consejo Nacional de Investigaciones Científicas y Técnicas, Ciudad Autonoma de Buenos Aires C1425FQB (Argentina); Centro Atómico Bariloche, Bariloche, Rio Negro 8400 (Argentina); Sirena, Martín [Consejo Nacional de Investigaciones Científicas y Técnicas, Ciudad Autonoma de Buenos Aires C1425FQB (Argentina); Centro Atómico Bariloche, Bariloche, Rio Negro 8400 (Argentina); Instituto Balseiro-CNEA & Univ. Nac. de Cuyo, Bariloche, Rio Negro 8400 (Argentina)

    2016-08-08

    We report on the interlayer exchange coupling across insulating barriers observed on Ni{sub 80}Fe{sub 20}/Ba{sub 0.05}Sr{sub 0.95}TiO{sub 3}/La{sub 0.66}Sr{sub 0.33}MnO{sub 3} (Py/BST{sub 0.05}/LSMO) trilayers. The coupling mechanism has been analyzed in terms of the barrier thickness, samples' substrate, and temperature. We examined the effect of MgO (MGO) and SrTiO{sub 3} (STO) (001) single-crystalline substrates on the magnetic coupling and also on the magnetic anisotropies of the samples in order to get a deeper understanding of the magnetism of the structures. We measured a weak coupling mediated by spin-dependent tunneling phenomena whose sign and strength depend on barrier thickness and substrate. An antiferromagnetic (AF) exchange prevails for most of the samples and smoothly increases with the barrier thicknesses as a consequence of the screening effects of the BST{sub 0.05}. The coupling monotonically increases with temperature in all the samples and this behavior is attributed to thermally assisted mechanisms. The magnetic anisotropy of both magnetic components has a cubic symmetry that in the case of permalloy is added to a small uniaxial component.

  18. Tunneling works. Tunnel koji

    Energy Technology Data Exchange (ETDEWEB)

    Higo, M [Hazam Gumi, Ltd., Tokyo (Japan)

    1991-10-25

    A mountain tunneling method for rock-beds used to be applied mainly to construction works in the mountains under few restrictions by environmental problems. However, construction works near residential sreas have been increasing. There are such enviromental problems due to tunneling works as vibration, noise, lowering of ground-water level, and influences on other structures. This report mainly describes the measurement examples of vibration and noise accompanied with blasting and the effects of the measures to lessen such influences. When the tunneling works for the railroad was carried out on the natural ground mainly composed of basalt, vibration of the test blasting was measured at three stations with piezoelectric accelerometers. Then, ordinary blasting, mutistage blasting, and ABM blasting methods were used properly besed on the above results, and only a few complaints were made. In the different works, normal noise and low-frequency sound were mesured at 22 stations around the pit mouth. As countermeasures for noise, sound-proof sheets, walls, and single and double doors were installed and foundto be effective. 1 ref., 6 figs., 1 tab.

  19. Properties of two-dimensional insulators: A DFT study of bimetallic oxide CrW{sub 2}O{sub 9} clusters adsorption on MgO ultrathin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Jia, E-mail: jia_zhu@jxnu.edu.cn [College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang, Jiangxi 330022 (China); Zhang, Hui; Zhao, Ling; Xiong, Wei [College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang, Jiangxi 330022 (China); Huang, Xin; Wang, Bin [Department of Chemistry, Fuzhou University, Fuzhou, Fujian, 350108 (China); Zhang, Yongfan, E-mail: zhangyf@fzu.edu.cn [Department of Chemistry, Fuzhou University, Fuzhou, Fujian, 350108 (China); State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou, Fujian, 350002 (China)

    2016-08-30

    Highlights: • Completely different properties of CrW{sub 2}O{sub 9} on films compared with that on surface. • The first example of CT by electron tunneling from film to bimetallic oxide cluster. • A progressive Lewis acid site, better catalytic activities for adsorbed CrW{sub 2}O{sub 9}. - Abstract: Periodic density functional theory calculations have been performed to study the electronic properties of bimetallic oxide CrW{sub 2}O{sub 9} clusters adsorbed on MgO/Ag(001) ultrathin films (<1 nm). Our results show that after deposition completely different structures, electronic properties and chemical reactivity of dispersed CrW{sub 2}O{sub 9} clusters on ultrathin films are observed compared with that on the thick MgO surface. On the thick MgO(001) surface, adsorbed CrW{sub 2}O{sub 9} clusters are distorted significantly and just a little electron transfer occurs from oxide surface to clusters, which originates from the formation of adsorption dative bonds at interface. Whereas on the MgO/Ag(001) ultrathin films, the resulting CrW{sub 2}O{sub 9} clusters keep the cyclic structures and the geometries are similar to that of gas-phase [CrW{sub 2}O{sub 9}]{sup −}. Interestingly, we predicted the occurrence of a net transfer of one electron by direct electron tunneling from the MgO/Ag(001) films to CrW{sub 2}O{sub 9} clusters through the thin MgO dielectric barrier. Furthermore, our work reveals a progressive Lewis acid site where spin density preferentially localizes around the Cr atom not the W atoms for CrW{sub 2}O{sub 9}/MgO/Ag(001) system, indicating a potentially good bimetallic oxide for better catalytic activities with respect to that of pure W{sub 3}O{sub 9} clusters. As a consequence, present results reveal that the adsorption of bimetallic oxide CrW{sub 2}O{sub 9} clusters on the MgO/Ag(001) ultrathin films provide a new perspective to tune and modify the properties and chemical reactivity of bimetallic oxide adsorbates as a function of the thickness

  20. Tunnelling of a molecule

    International Nuclear Information System (INIS)

    Jarvis, P.D.; Bulte, D.P.

    1998-01-01

    A quantum-mechanical description of tunnelling is presented for a one-dimensional system with internal oscillator degrees of freedom. The 'charged diatomic molecule' is frustrated on encountering a barrier potential by its centre of charge not being coincident with its centre of mass, resulting in transitions amongst internal states. In an adiabatic limit, the tunnelling of semiclassical coherent-like oscillator states is shown to exhibit the Hartman and Bueuttiker-Landauer times t H and t BL , with the time dependence of the coherent state parameter for the tunnelled state given by α(t) = α e -iω(t+Δt) , Δt = t H - it BL . A perturbation formalism is developed, whereby the exact transfer matrix can be expanded to any desired accuracy in a suitable limit. An 'intrinsic' time, based on the oscillator transition rate during tunnelling, transmission or reflection, is introduced. In simple situations the resulting intrinsic tunnelling time is shown to vanish to lowest order. In the general case a particular (nonzero) parametrisation is inferred, and its properties discussed in comparison with the literature on tunnelling times for both wavepackets and internal clocks. Copyright (1998) CSIRO Australia

  1. Feasibilty of a Multi-bit Cell Perpendicular Magnetic Tunnel Junction Device

    Science.gov (United States)

    Kim, Chang Soo

    The ultimate objective of this research project was to explore the feasibility of making a multi-bit cell perpendicular magnetic tunnel junction (PMTJ) device to increase the storage density of spin-transfer-torque random access memory (STT-RAM). As a first step toward demonstrating a multi-bit cell device, this dissertation contributed a systematic and detailed study of developing a single cell PMTJ device using L10 FePt films. In the beginning of this research, 13 up-and-coming non-volatile memory (NVM) technologies were investigated and evaluated to see whether one of them might outperform NAND flash memories and even HDDs on a cost-per-TB basis in 2020. This evaluation showed that STT-RAM appears to potentially offer superior power efficiency, among other advantages. It is predicted that STTRAM's density could make it a promising candidate for replacing NAND flash memories and possibly HDDs if STTRAM could be improved to store multiple bits per cell. Ta/Mg0 under-layers were used first in order to develop (001) L1 0 ordering of FePt at a low temperature of below 400 °C. It was found that the tradeoff between surface roughness and (001) L10 ordering of FePt makes it difficult to achieve low surface roughness and good perpendicular magnetic properties simultaneously when Ta/Mg0 under-layers are used. It was, therefore, decided to investigate MgO/CrRu under-layers to simultaneously achieve smooth films with good ordering below 400°C. A well ordered 4 nm L10 FePt film with RMS surface roughness close to 0.4 nm, perpendicular coercivity of about 5 kOe, and perpendicular squareness near 1 was obtained at a deposition temperature of 390 °C on a thermally oxidized Si substrate when MgO/CrRu under-layers are used. A PMTJ device was developed by depositing a thin MgO tunnel barrier layer and a top L10 FePt film and then being postannealed at 450 °C for 30 minutes. It was found that the sputtering power needs to be minimized during the thin MgO tunnel barrier

  2. Robust spin transfer torque in antiferromagnetic tunnel junctions

    KAUST Repository

    Saidaoui, Hamed Ben Mohamed; Waintal, Xavier; Manchon, Aurelien

    2017-01-01

    We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque

  3. Interstitial Fe in MgO

    CERN Document Server

    Mølholt, T E; Gunnlaugsson, H P; Svane, A; Masenda, H; Naidoo, D; Bharuth-Ram, K; Fanciulli, M; Gislason, H P; Johnston, K; Langouche, G; Ólafsson, S; Sielemann, R; Weyer, G

    2014-01-01

    Isolated Fe-57 atoms were studied in MgO single-crystals by emission Mossbauer spectroscopy following implantation of Mn-57 decaying to Fe-57. Four Mossbauer spectral components were found corresponding to different Fe lattice positions and/or charge states. Two components represent Fe atoms substituting Mg as Fe2+ and Fe3+, respectively; a third component is due to Fe in a strongly implantation-induced disturbed region. The fourth component, which is the focus of this paper, can be assigned to Fe at an interstitial site. Comparison of its measured isomer shift with ab initio calculations suggests that the interstitial Fe is located on, or close to, the face of the rock-salt MgO structure. To harmonize such an assignment with the measured near-zero quadrupole interaction a local motion process (cage motion) of the Fe has to be stipulated. The relation of such a local motion as a starting point for long range diffusion is discussed.

  4. concentration on spin-dependent resonant tunnelling in InAs/Ga1 ...

    Indian Academy of Sciences (India)

    Cent percentage polarization can be obtained in this strained non-magnetic double-barrier ... Keywords. Spin–orbit interaction; barrier transparency; polarization efficiency; tunnelling lifetime. 1. Introduction ..... Figure 6. Tunnelling lifetime vs.

  5. Tunneling Flight Time, Chemistry, and Special Relativity.

    Science.gov (United States)

    Petersen, Jakob; Pollak, Eli

    2017-09-07

    Attosecond ionization experiments have not resolved the question "What is the tunneling time?". Different definitions of tunneling time lead to different results. Second, a zero tunneling time for a material particle suggests that the nonrelativistic theory includes speeds greater than the speed of light. Chemical reactions, occurring via tunneling, should then not be considered in terms of a nonrelativistic quantum theory calling into question quantum dynamics computations on tunneling reactions. To answer these questions, we define a new experimentally measurable paradigm, the tunneling flight time, and show that it vanishes for scattering through an Eckart or a square barrier, irrespective of barrier length or height, generalizing the Hartman effect. We explain why this result does not lead to experimental measurement of speeds greater than the speed of light. We show that this tunneling is an incoherent process by comparing a classical Wigner theory with exact quantum mechanical computations.

  6. Theoretical Limiting Potentials in Mg/O2 Batteries

    DEFF Research Database (Denmark)

    Smith, Jeffrey G.; Naruse, Junichi; Hiramatsu, Hidehiko

    2016-01-01

    A rechargeable battery based on a multivalent Mg/O2 couple is an attractive chemistry due to its high theoretical energy density and potential for low cost. Nevertheless, metal-air batteries based on alkaline earth anodes have received limited attention and generally exhibit modest performance....... In addition, many fundamental aspects of this system remain poorly understood, such as the reaction mechanisms associated with discharge and charging. The present study aims to close this knowledge gap and thereby accelerate the development of Mg/O2 batteries by employing first-principles calculations...... by the presence of large thermodynamic overvoltages. In contrast, MgO2-based cells are predicted to be much more efficient: superoxide-terminated facets on MgO2 crystallites enable low overvoltages and round-trip efficiencies approaching 90%. These data suggest that the performance of Mg/O2 batteries can...

  7. A first-principles and experimental study of helium diffusion in periclase MgO

    Science.gov (United States)

    Song, Zhewen; Wu, Henry; Shu, Shipeng; Krawczynski, Mike; Van Orman, James; Cherniak, Daniele J.; Bruce Watson, E.; Mukhopadhyay, Sujoy; Morgan, Dane

    2018-02-01

    The distribution of He isotopes is used to trace heterogeneities in the Earth's mantle, and is particularly useful for constraining the length scale of heterogeneity due to the generally rapid diffusivity of helium. However, such an analysis is challenging because He diffusivities are largely unknown in lower mantle phases, which can influence the He profiles in regions that cycle through the lower mantle. With this motivation, we have used first-principles simulations based on density functional theory to study He diffusion in MgO, an important lower mantle phase. We first studied the case of interstitial helium diffusion in perfect MgO and found a migration barrier of 0.73 eV at zero pressure. Then we used the kinetic Monte Carlo method to study the case of substitutional He diffusion in MgO, where we assumed that He diffuses on the cation sublattice through cation vacancies. We also performed experiments on He diffusion at atmospheric pressure using ion implantation and nuclear reaction analysis in both as-received and Ga-doped samples. A comparison between the experimental and simulation results are shown. This work provides a foundation for further studies at high-pressure.

  8. Intrinsic Conductivity in Magnesium-Oxygen Battery Discharge Products: MgO and MgO2

    DEFF Research Database (Denmark)

    Smith, Jeffrey G.; Naruse, Junichi; Hiramatsu, Hidehiko

    2017-01-01

    Nonaqueous magnesium–oxygen (or “Mg-air”) batteries are attractive next generation energy storage devices due to their high theoretical energy densities, projected low cost, and potential for rechargeability. Prior experiments identified magnesium oxide, MgO, and magnesium peroxide, MgO2...

  9. Tunneling time, what is its meaning?

    International Nuclear Information System (INIS)

    McDonald, C R; Orlando, G; Vampa, G; Brabec, T

    2015-01-01

    The tunnel time ionization dynamics for bound systems in laser fields are investigated. Numerical analysis for a step function switch-on of the field allows for the tunnel time to be defined as the time it takes the ground state to develop the under-barrier wavefunction components necessary to achieve the static field ionization rate. A relation between the tunnel time and the Keldysh time is established. The definition of the tunnel time is extended to time varying fields and experimental possibilities for measuring the tunnel time are discussed

  10. Experimental Evidence for Quantum Tunneling Time

    Science.gov (United States)

    Camus, Nicolas; Yakaboylu, Enderalp; Fechner, Lutz; Klaiber, Michael; Laux, Martin; Mi, Yonghao; Hatsagortsyan, Karen Z.; Pfeifer, Thomas; Keitel, Christoph H.; Moshammer, Robert

    2017-07-01

    The first hundred attoseconds of the electron dynamics during strong field tunneling ionization are investigated. We quantify theoretically how the electron's classical trajectories in the continuum emerge from the tunneling process and test the results with those achieved in parallel from attoclock measurements. An especially high sensitivity on the tunneling barrier is accomplished here by comparing the momentum distributions of two atomic species of slightly deviating atomic potentials (argon and krypton) being ionized under absolutely identical conditions with near-infrared laser pulses (1300 nm). The agreement between experiment and theory provides clear evidence for a nonzero tunneling time delay and a nonvanishing longitudinal momentum of the electron at the "tunnel exit."

  11. MgO by injection CVD

    International Nuclear Information System (INIS)

    Abrutis, A.; Kubilius, V.; Teiserkis, A.; Bigelyte, V.; Vengalis, B.; Jukna, A.; Butkute, R.

    1997-01-01

    Epitaxial YBa 2 Cu 3 O 7 layers with 45 in-plane orientation have been grown by injection CVD on MgO substrates polished off-axis to within 1.4-1.9 of the [100] direction. This new single-source CVD process is based on computer-controlled injection of precise microdoses of a metal-organic precursor solution into a CVD reactor. A wide range of solution compositions was tested to investigate compositional effects on phase purity, surface morphology, texturing and superconducting properties of the prepared films. The highest quality films with pure 45 texture had a smooth surface, zero resistance T c (R=0) of 88-89 K, and critical current density J c (77 K) above 10 6 A/cm 2 . (orig.) and critical current density J c (77 K) above 10 6 A/cm 2 . (orig.)

  12. Surface flattening processes of metal layer and their effect on transport properties of magnetic tunnel junctions with Al-N barrier

    International Nuclear Information System (INIS)

    Yoshimura, S.; Nozawa, T.; Shoyama, T.; Tsunoda, M.; Takahashi, M.

    2005-01-01

    In order to form ultrathin insulating layer in magnetic tunnel junctions (MTJs), two surface flatting processes of metal films are investigated. Oxygen-additive sputter-deposition process was applied to the bottom Cu electrode and the Al layer to be nitrided. Dry-etching process was applied for the surface treatment of lower Co-Fe layer. As a result, the surface roughness of stacked ultrathin Al layer to be nitrided is reduced from 3.2A to 1.7A, and the tunnel magnetoresistance (TMR) ratio of the MTJs increases from 1% to 26% while maintaining resistance-area product (RxA) less than 5x10 2 Ω μm 2 in the Co-Fe/Al(6A)-N/Co-Fe MTJs. We conclude that the decrease of the surface roughness of Al layer is one of the key factors to realize high performance MTJs with low RxA and high TMR ratio

  13. Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Parui, Subir; Ribeiro, Mário; Atxabal, Ainhoa; Llopis, Roger; Bedoya-Pinto, Amilcar; Sun, Xiangnan; Casanova, Fèlix; Hueso, Luis E.

    2016-01-01

    The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al 2 O 3 /NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.

  14. Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu; Ribeiro, Mário; Atxabal, Ainhoa; Llopis, Roger [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); Bedoya-Pinto, Amilcar [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); Max Planck Institute of Microstructure Physics, D-06120 Halle (Germany); Sun, Xiangnan [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); National Center for Nanoscience and Technology, 100190 Beijing (China); Casanova, Fèlix; Hueso, Luis E., E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain)

    2016-08-01

    The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{sub 2}O{sub 3}/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.

  15. Influence of face-centered-cubic texturing of Co2Fe6B2 pinned layer on tunneling magnetoresistance ratio decrease in Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer.

    Science.gov (United States)

    Takemura, Yasutaka; Lee, Du-Yeong; Lee, Seung-Eun; Chae, Kyo-Suk; Shim, Tae-Hun; Lian, Guoda; Kim, Moon; Park, Jea-Gun

    2015-05-15

    The TMR ratio of Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd]n-SyAF layer decreased rapidly when the ex situ magnetic annealing temperature (Tex) was increased from 275 to 325 °C, and this decrease was associated with degradation of the Co2Fe6B2 pinned layer rather than the Co2Fe6B2 free layer. At a Tex above 325 °C the amorphous Co2Fe6B2 pinned layer was transformed into a face-centered-cubic (fcc) crystalline layer textured from [Co/Pd]n-SyAF, abruptly reducing the Δ1 coherence tunneling of perpendicular-spin-torque electrons between the (100) MgO tunneling barrier and the fcc Co2Fe6B2 pinned layer.

  16. FeGa/MgO/Fe/GaAs(001) magnetic tunnel junction: Growth and magnetic properties

    International Nuclear Information System (INIS)

    Gobaut, B.; Ciprian, R.; Salles, B.R.; Krizmancic, D.; Rossi, G.; Panaccione, G.; Eddrief, M.; Marangolo, M.; Torelli, P.

    2015-01-01

    Research on spintronics and on multiferroics leads now to the possibility of combining the properties of these materials in order to develop new functional devices. Here we report the integration of a layer of magnetostrictive material into a magnetic tunnel junction. A FeGa/MgO/Fe heterostructure has been grown on a GaAs(001) substrate by molecular beam epitaxy (MBE) and studied by X-ray magnetic circular dichroism (XMCD). The comparison between magneto optical Kerr effect (MOKE) measurements and hysteresis performed in total electron yield allowed distinguishing the ferromagnetic hysteresis loop of the FeGa top layer from that of the Fe buried layer, evidencing a different switching field of the two layers. This observation indicates an absence of magnetic coupling between the two ferromagnetic layers despite the thickness of the MgO barrier of only 2.5 nm. The in-plane magnetic anisotropy has also been investigated. Overall results show the good quality of the heterostructure and the general feasibility of such a device using magnetostrictive materials in magnetic tunnel junction

  17. Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

    Energy Technology Data Exchange (ETDEWEB)

    Grezes, C.; Alzate, J. G.; Cai, X.; Wang, K. L. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Ebrahimi, F.; Khalili Amiri, P. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Inston, Inc., Los Angeles, California 90024 (United States); Katine, J. A. [HGST, Inc., San Jose, California 95135 (United States); Langer, J.; Ocker, B. [Singulus Technologies AG, Kahl am Main 63796 (Germany)

    2016-01-04

    We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memory and logic integrated circuits.

  18. Improved multidimensional semiclassical tunneling theory.

    Science.gov (United States)

    Wagner, Albert F

    2013-12-12

    We show that the analytic multidimensional semiclassical tunneling formula of Miller et al. [Miller, W. H.; Hernandez, R.; Handy, N. C.; Jayatilaka, D.; Willets, A. Chem. Phys. Lett. 1990, 172, 62] is qualitatively incorrect for deep tunneling at energies well below the top of the barrier. The origin of this deficiency is that the formula uses an effective barrier weakly related to the true energetics but correctly adjusted to reproduce the harmonic description and anharmonic corrections of the reaction path at the saddle point as determined by second order vibrational perturbation theory. We present an analytic improved semiclassical formula that correctly includes energetic information and allows a qualitatively correct representation of deep tunneling. This is done by constructing a three segment composite Eckart potential that is continuous everywhere in both value and derivative. This composite potential has an analytic barrier penetration integral from which the semiclassical action can be derived and then used to define the semiclassical tunneling probability. The middle segment of the composite potential by itself is superior to the original formula of Miller et al. because it incorporates the asymmetry of the reaction barrier produced by the known reaction exoergicity. Comparison of the semiclassical and exact quantum tunneling probability for the pure Eckart potential suggests a simple threshold multiplicative factor to the improved formula to account for quantum effects very near threshold not represented by semiclassical theory. The deep tunneling limitations of the original formula are echoed in semiclassical high-energy descriptions of bound vibrational states perpendicular to the reaction path at the saddle point. However, typically ab initio energetic information is not available to correct it. The Supporting Information contains a Fortran code, test input, and test output that implements the improved semiclassical tunneling formula.

  19. On the directional selectivity of tunneling experiments

    International Nuclear Information System (INIS)

    Beuermann, G.; Goettingen Univ.

    1981-01-01

    Using realistic parameters in a simplified model the directional selectivity of tunneling experiments is discussed. Although perfect surfaces and barriers are assumed, quasiparticles coming from a wide solid angle may contribute essentially to the tunnel current. This must be taken into consideration in the case of gap anisotropy. (orig.)

  20. The investigation of radiation induced defects in MgO

    International Nuclear Information System (INIS)

    Puetz, M.

    1990-05-01

    In this paper Frenkel defects were induced in MgO by 3 MeV electrons at low temperature. These defects were investigated by measurements of the optical absorption, by investigating the lattice parameters and Huang diffuse scattering. (WL)

  1. Theory of superconducting tunneling without the tunneling Hamiltonian

    International Nuclear Information System (INIS)

    Arnold, G.B.

    1987-01-01

    When a tunneling barrier is nearly transparent, the standard tunneling (or transfer) Hamiltonian approximation fails. The author describes the theory which is necessary for calculating the tunneling current in these cases, and illustrate it by comparing theory and experiment on superconductor/insulator/superconductor (SIS) junctions have ultra-thin tunnel barriers. This theory accurately explains the subgap structure which appears in the dynamical resistance of such SIS junctions, including many observed details which no previous theory has reproduced. The expression for the current through an SIS junction with an ultrathin barrier is given by I(t) = Re{Sigma/sub n/ J/sub n/ (omega/sub o/)e/sup in omega/o/sup t/} where omega/sub o/ = 2eV/h is the Josephson frequency, V is the bias voltage, and the J/sub n/ are voltage dependent coefficients, one for each positive or negative integer, n, and n=0. The relative sign of the terms involving cos(n omega/sub o/t) and sin(n omega/sub o/t) agrees with experiment, in contrast to previous theories of Josephson tunneling

  2. Spin polarization at the interface and tunnel magnetoresistance

    International Nuclear Information System (INIS)

    Itoh, H.; Inoue, J.

    2001-01-01

    We propose that interfacial states of imperfectly oxidized Al ions may exist in ferromagnetic tunnel junctions with Al-O barrier and govern both the spin polarization and tunnel conductance. It is shown that the spin polarization is positive independent of materials and correlates well with the tunnel magnetoresistance

  3. Superconducting tunnel-junction refrigerator

    International Nuclear Information System (INIS)

    Melton, R.G.; Paterson, J.L.; Kaplan, S.B.

    1980-01-01

    The dc current through an S 1 -S 2 tunnel junction, with Δ 2 greater than Δ 1 , when biased with eV 1 +Δ 2 , will lower the energy in S 1 . This energy reduction will be shared by the phonons and electrons. This device is shown to be analogous to a thermoelectric refrigerator with an effective Peltier coefficient π* approx. Δ 1 /e. Tunneling calculations yield the cooling power P/sub c/, the electrical power P/sub e/ supplied by the bias supply, and the cooling efficiency eta=P/sub c//P/sub e/. The maximum cooling power is obtained for eV= +- (Δ 2 -Δ 1 ) and t 1 =T 1 /T/sub c/1 approx. 0.9. Estimates are made of the temperature difference T 2 -T 1 achievable in Al-Pb and Sn-Pb junctions with an Al 2 O 3 tunneling barrier. The performance of this device is shown to yield a maximum cooling efficiency eta approx. = Δ 1 /(Δ 2 -Δ 1 ) which can be compared with that available in an ideal Carnot refrigerator of eta=T 1 /(T 2 -T 1 ). The development of a useful tunnel-junction refrigerator requires a tunneling barrier with an effective thermal conductance per unit area several orders of magnitude less than that provided by the A1 2 O 3 barrier in the Al-Pb and Sn-Pb systems

  4. Resonant tunneling of electrons in quantum wires

    International Nuclear Information System (INIS)

    Krive, I.V.; Shekhter, R.I.; Jonson, M.; Krive, I.V.

    2010-01-01

    We considered resonant electron tunneling in various nanostructures including single wall carbon nanotubes, molecular transistors and quantum wires formed in two-dimensional electron gas. The review starts with a textbook description of resonant tunneling of noninteracting electrons through a double-barrier structure. The effects of electron-electron interaction in sequential and resonant electron tunneling are studied by using Luttinger liquid model of electron transport in quantum wires. The experimental aspects of the problem (fabrication of quantum wires and transport measurements) are also considered. The influence of vibrational and electromechanical effects on resonant electron tunneling in molecular transistors is discussed.

  5. Influence of quasiparticle multi-tunneling on the energy flow through the superconducting tunnel junction

    International Nuclear Information System (INIS)

    Samedov, V. V.; Tulinov, B. M.

    2011-01-01

    Superconducting tunnel junction (STJ) detector consists of two layers of superconducting material separated by thin insulating barrier. An incident particle produces in superconductor excess nonequilibrium quasiparticles. Each quasiparticle in superconductor should be considered as quantum superposition of electron-like and hole-like excitations. This duality nature of quasiparticle leads to the effect of multi-tunneling. Quasiparticle starts to tunnel back and forth through the insulating barrier. After tunneling from biased electrode quasiparticle loses its energy via phonon emission. Eventually, the energy that equals to the difference in quasiparticle energy between two electrodes is deposited in the signal electrode. Because of the process of multi-tunneling, one quasiparticle can deposit energy more than once. In this work, the theory of branching cascade processes was applied to the process of energy deposition caused by the quasiparticle multi-tunneling. The formulae for the mean value and variance of the energy transferred by one quasiparticle into heat were derived. (authors)

  6. Unified time analysis of photon and particle tunnelling

    International Nuclear Information System (INIS)

    Olkhovsky, Vladislav S.; Recami, Erasmo; Jakiel, Jacek

    2001-07-01

    A unified approach to the time analysis of tunnelling of nonrelativistic particles is presented, in which Time is regarded as a quantum-mechanical observable, canonically conjugated to Energy. The validity of the Hartman effect (independence of the Tunnelling Time of the opaque barrier width, with superluminal group velocities as a consequence) is verified for all the known expressions of the mean tunnelling time. Moreover, the analogy between particle and photon tunnelling is suitably exploited. On the basic of such an analogy, an explanation of some recent microwave and optics experimental results on tunnelling time is proposed. Attention is devoted to some aspects of the causality problem for particle and photon tunnelling. (author)

  7. Tunneling Anomalous and Spin Hall Effects.

    Science.gov (United States)

    Matos-Abiague, A; Fabian, J

    2015-07-31

    We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems.

  8. Multifunctional MgO Layer in Perovskite Solar Cells.

    Science.gov (United States)

    Guo, Xudong; Dong, Haopeng; Li, Wenzhe; Li, Nan; Wang, Liduo

    2015-06-08

    A multifunctional magnesium oxide (MgO) layer was successfully introduced into perovskite solar cells (PSCs) to enhance their performance. MgO was coated onto the surface of mesoporous TiO(2) by the decomposition of magnesium acetate and, therefore, could block contact between the perovskite and TiO(2). X-ray photoelectron spectroscopy and infrared spectroscopy showed that the amount of H(2)O/hydroxyl absorbed on the TiO(2) decreased after MgO modification. The UV/Vis absorption spectra of the perovskite with MgO modification revealed an enhanced photoelectric performance compared with that of unmodified perovskite after UV illumination. In addition to the photocurrent, the photovoltage and fill factor also showed an enhancement after modification, which resulted in an increase in the overall efficiency of the cell from 9.6 to 13.9 %. Electrochemical impedance spectroscopy (EIS) confirmed that MgO acts as an insulating layer to reduce charge recombination. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Use of porous MgO in pyrochemical applications

    International Nuclear Information System (INIS)

    Maiya, P.S.; Sweeney, S.M.; Carroll, L.A.; Dusek, J.T.

    1994-11-01

    Pyrochemical methods for the extraction of transuranic elements from light water reactor spent fuel require a reduction step in which the oxide fuel is reduced to metals by Li in molten LiCl. The Li 2 O formed is electrolytically reduced to metal in a cell that uses a carbon (or inert) anode and a Li cathode to recycle the salt and minimize the waste. Use of a carbon anode causes carbon dust that interferes with the process. Moreover, current efficiency is reduced as a result of oxidation of Li to Li 2 O by CO 2 . A porous MgO shroud around the anode was found to obviate these problems. Porous MgO crucibles and rectangular bar specimens were fabricated from MgO powders (electrically fused MgO, reagent grade MgO were mixed in appropriate combinations with a binder and lubricant). Particle size, force applied to the powders during cold pressing, and sintering temperature were varied to achieve a total porosity of >45% (mostly open porosity) and to control pore size and pore distribution. Mercury intrusion porosimetry was used to determine the pore size and pore size distribution. Flexural strength is observed to be proportional to the square root of pore size, which is consistent with fracture mechanics

  10. Chaos regularization of quantum tunneling rates

    International Nuclear Information System (INIS)

    Pecora, Louis M.; Wu Dongho; Lee, Hoshik; Antonsen, Thomas; Lee, Ming-Jer; Ott, Edward

    2011-01-01

    Quantum tunneling rates through a barrier separating two-dimensional, symmetric, double-well potentials are shown to depend on the classical dynamics of the billiard trajectories in each well and, hence, on the shape of the wells. For shapes that lead to regular (integrable) classical dynamics the tunneling rates fluctuate greatly with eigenenergies of the states sometimes by over two orders of magnitude. Contrarily, shapes that lead to completely chaotic trajectories lead to tunneling rates whose fluctuations are greatly reduced, a phenomenon we call regularization of tunneling rates. We show that a random-plane-wave theory of tunneling accounts for the mean tunneling rates and the small fluctuation variances for the chaotic systems.

  11. Soluble salts addition modifies MgO hydration

    International Nuclear Information System (INIS)

    Santos, A.M.; Pandolfelli, V.C.; Salomao, R.

    2012-01-01

    Magnesium oxide (MgO) show great technological interest on refractories due to its high refractoriness, basic slag corrosion resistance and competitive cost. However, the hydration reaction of MgO produces magnesium hydroxide. This reaction generates a significant volumetric expansion that can lead to material breakdown inhibiting its use in refractory castables. This reaction can be affected by several factors such as magnesia source, purity, calcination temperature, pH, CaO/SiO 2 ratio and agitation speed. In the present work, soluble salts (CaCl 2 and MgCl 2 ) were used in MgO aqueous suspensions (caustic and sinter). The results were evaluated by means of techniques of degree of hydration (termogravimetric), Scanning electron microscopy, apparent volumetric expansion and x-ray Diffraction which showed that the degree of hydration was noticeably less to sinter aqueous and the expansive effects were less with the addition of CaCl 2 . (author)

  12. Recognition tunneling

    Czech Academy of Sciences Publication Activity Database

    Lindsay, S.; He, J.; Sankey, O.; Hapala, Prokop; Jelínek, Pavel; Zhang, P.; Chang, S.; Huang, S.

    2010-01-01

    Roč. 21, č. 26 (2010), 262001/1-262001/12 ISSN 0957-4484 R&D Projects: GA ČR GA202/09/0545 Institutional research plan: CEZ:AV0Z10100521 Keywords : STM * tunneling current * molecular electronics * DFT calculations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.644, year: 2010

  13. Four-fold magnetic anisotropy in a Co film on MgO(0 0 1)

    International Nuclear Information System (INIS)

    Pires, M.J.M.; Cotta, A.A.C.; Martins, M.D.; Silva, A.M.A.; Macedo, W.A.A.

    2011-01-01

    The development of devices based on magnetic tunnel junctions has raised new interests on the structural and magnetic properties of the interface Co/MgO. In this context, we have grown ultrathin Co films (≤30 A) by molecular-beam epitaxy on MgO(0 0 1) substrates kept at different temperatures (T S ). Their structural and magnetic properties were correlated and discussed in the context of distinct magnetic anisotropies for Co phases reported in the literature. The sample characterization has been done by reflection high energy electron diffraction, magneto-optical Kerr effect and ferromagnetic resonance. The main focus of the work is on a sample deposited at T S =25 o C, as its particular way of growth has enabled a bct Co structure to settle on the substrate, where it is not normally obtained without specific seed layers. This sample presented the best crystallinity, softer magnetic properties and a four-fold in-plane magnetic anisotropy with Co easy directions. Concerning the samples prepared at T S =200 and 500 o C, they show fcc and polycrystalline structures, respectively and more intricate magnetic anisotropy patterns. - Research Highlights: →Results suggest the lattice is already after the Bain transformation for T S =25 o C, and the Co film has a bct structure instead of an fct one. →For deposition temperature of T S =25 o C, a four-fold in-plane magnetic anisotropy with Co easy directions has been obtained. →The growth mode of Co on MgO single crystals at different temperatures resulted in bct Co at T S =25 o C, fcc Co at T S =200 o C and polycrystalline Co at T S =500 o C.

  14. Superconducting tunneling with the tunneling Hamiltonian. II. Subgap harmonic structure

    International Nuclear Information System (INIS)

    Arnold, G.B.

    1987-01-01

    The theory of superconducting tunneling without the tunneling Hamiltonian is extended to treat superconductor/insulator/superconductor junctions in which the transmission coefficient of the insulating barrier approaches unity. The solution for the current in such junctions is obtained by solving the problem of a particle hopping in a one-dimensional lattice of sites, with forward and reverse transfer integrals that depend on the site. The results are applied to the problem of subgap harmonic structure in superconducting tunneling. The time-dependent current at finite voltage through a junction exhibiting subgap structure is found to have terms that oscillate at all integer multiples of the Josephson frequency, n(2eV/h). The amplitudes of these new, and as yet unmeasured, ac current contributions as a function of voltage are predicted

  15. The tunneling spectra and superconducting gaps observed by using scanning tunneling microscope near the grain-boundary of FeSe0.3Te0.7 films

    OpenAIRE

    Lin, K. C.; Li, Y. S.; Shen, Y. T.; Wu, M. K.; Chi, C. C.

    2013-01-01

    We used STM to study the tunneling spectra of FeSe0.3Te0.7 films with two orientations of ab-planes and the connection ramp between them. We have discovered that, using pulse laser deposition (PLD) method, the a- and b-axis of the FeSe0.3Te0.7 film deposited on Ar-ion-milled Magnesium Oxide (MgO) substrate are rotated 45 degree with respect to those of MgO, while the a- and b-axis of the film grown on pristine MgO substrate are parallel to those of MgO. With photolithography and this techniqu...

  16. Thermically stimulated exoelectronic emissions and thermoluminescence of MgO

    International Nuclear Information System (INIS)

    Chubaci, J.F.D.

    1987-01-01

    In this work, studies were performed on the following topics: i) thermically stimulated exoelectronic emission (TSEE) in pure MgO single crystals ion implanted, submitted to thermal treatment with fast on slow cooling and water adsorption; ii) ultraviolet light effect on TSEE; iii) thermoluminescent emission; iv) crystallization of FeCoB amorphous alloys. (A.C.A.S.) [pt

  17. Lithium ion implantation effects in MgO (100)

    NARCIS (Netherlands)

    van Huis, MA; Fedorov, AV; van Veen, A; Labohm, F; Schut, H; Mijnarends, PE; Kooi, BJ; De Hosson, JTM; Triftshauser, W; Kogel, G; Sperr, P

    2001-01-01

    Single crystals of MgO (100) were implanted with 10(16) (6)Li ions cm(-2) at an energy of 30 keV. After ion implantation the samples were annealed isochronally in air at temperatures up to 1200K. After implantation and after each annealing step, the defect evolution was monitored with optical

  18. Formation of aluminum titanate with small additions of MgO and SiO2

    International Nuclear Information System (INIS)

    Guedes-Silva, Cecilia Chaves; Ferreira, Thiago dos Santos; Genova, Luis Antonio; Carvalho, Flavio Machado de Souza

    2016-01-01

    The formation of aluminum titanate was investigated by isothermal treatments of samples obtained from equimolar mixtures of alumina and titania, containing small amounts of silica and magnesia. Results of differential thermal analysis and Rietveld refinements of data collected by X-ray powder diffraction (XRPD) showed that additions of silica in amounts used in this work did not influence the formation of aluminum titanate. However, the presence of magnesia favored the formation of aluminum titanate in two steps, first one by incorporating Mg 2+ into Al 2 TiO 5 lattice during its initial formation, and the second one by accelerating the Al 2 TiO 5 formation, contributing to large quantities of this phase. MgO doped samples have also developed a more suitable microstructure for stabilizing of Al 2 TiO 5 , what make them promising for applications such as thermal barriers, internal combustion engines and support material for catalyst. (author)

  19. Scanning tunneling microscopic images and scanning tunneling spectra for coupled rectangular quantum corrals

    International Nuclear Information System (INIS)

    Mitsuoka, Shigenori; Tamura, Akira

    2011-01-01

    Assuming that an electron confined by double δ-function barriers lies in a quasi-stationary state, we derived eigenstates and eigenenergies of the electron. Such an electron has a complex eigenenergy, and the imaginary part naturally leads to the lifetime of the electron associated with tunneling through barriers. We applied this point of view to the electron confined in a rectangular quantum corral (QC) on a noble metal surface, and obtained scanning tunneling microscopic images and a scanning tunneling spectrum consistent with experimental ones. We investigated the electron states confined in coupled QCs and obtained the coupled states constructed with bonding and anti-bonding states. Using those energy levels and wavefunctions we specified scanning tunneling microscope (STM) images and scanning tunneling spectra (STS) for the doubly and triply coupled QCs. In addition we pointed out the feature of resonant electron states associated with the same QCs at both ends of the triply coupled QCs.

  20. Tunnel - history of

    International Nuclear Information System (INIS)

    1998-11-01

    This book introduces history of tunnel in ancient times, the middle ages and modern times, survey of tunnel and classification of bedrock like environment survey of position, survey of the ground, design of tunnel on basic thing of the design, and design of tunnel of bedrock, analysis of stability of tunnel and application of the data, construction of tunnel like lattice girder and steel fiber reinforced shot crete, and maintenance control and repair of tunnel.

  1. Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles

    Science.gov (United States)

    Useinov, Arthur; Ye, Lin-Xiu; Useinov, Niazbeck; Wu, Te-Ho; Lai, Chih-Huang

    2015-01-01

    The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and non-magnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in leterature. PMID:26681336

  2. Tunneling time in space fractional quantum mechanics

    Science.gov (United States)

    Hasan, Mohammad; Mandal, Bhabani Prasad

    2018-02-01

    We calculate the time taken by a wave packet to travel through a classically forbidden region of space in space fractional quantum mechanics. We obtain the close form expression of tunneling time from a rectangular barrier by stationary phase method. We show that tunneling time depends upon the width b of the barrier for b → ∞ and therefore Hartman effect doesn't exist in space fractional quantum mechanics. Interestingly we found that the tunneling time monotonically reduces with increasing b. The tunneling time is smaller in space fractional quantum mechanics as compared to the case of standard quantum mechanics. We recover the Hartman effect of standard quantum mechanics as a special case of space fractional quantum mechanics.

  3. Unified time analysis of photon and particle tunnelling

    International Nuclear Information System (INIS)

    Olkhovsky, V.S.; Recami, Erasmo; Jakiel, Jacek

    2004-01-01

    A unified time analysis of photon and nonrelativistic particle tunnellings is presented, in which time is regarded as a quantum observable, canonically conjugated to energy. Within this approach, one can introduce self-consistent definitions of the tunnelling times, on the basis of conventional quantum mechanics (or one-dimensional quantum electrodynamics) only. The validity of the Hartman effect [which states the tunnelling duration to be independent of the (opaque) barrier width, with superluminal group velocities of the tunnelling packet as a consequence] is verified for all the known expressions of the mean tunnelling time. However, some noticeable generalizations of (and deviations from) the Hartman effect are, as well, briefly investigated. Moreover, the analogy between particle and photon tunnelling is suitably exploited; on the basis of such an analogy, an explanation of some recent interesting microwave and optical experimental results on tunnelling times is proposed. Attention is devoted, at last, to some aspects of the causality problem for particle and photon tunnelling

  4. The temperature in Hawking radiation as tunneling

    International Nuclear Information System (INIS)

    Zhang Baocheng; Cai Qingyu; Zhan Mingsheng

    2009-01-01

    The quasi-classical method of deriving Hawking radiation under the consideration of canonical invariance is investigated. We find that the horizon should be regarded as a two-way barrier and the ingoing amplitude should be calculated according to the negative energy particles tunneling into the black hole because of the whole space-time interchange and thus the standard Hawking temperature is recovered. We also discuss the advantage of the Painleve coordinates in Hawking radiation as tunneling

  5. Recovery of SO2 and MgO from By-Products of MgO Wet Flue Gas Desulfurization.

    Science.gov (United States)

    Yan, Liyun; Lu, Xiaofeng; Wang, Quanhai; Guo, Qiang

    2014-11-01

    An industrial demonstration unit using natural gas as a heat source was built to calcine the by-products of MgO wet flue gas desulfurization from power plants; influencing factors on the SO 2 content in calciner gas were comprehensively analyzed; and an advantageous recycling condition of MgO and SO 2 from by-products was summarized. Results showed that the SO 2 content in the calciner gas was increased by more than 10 times under a lower excess air coefficient, a higher feed rate, a lower crystal water in by-products, and a higher feed port position. For the tests conducted under the excess air coefficient above and below one, the effect of the furnace temperature on the SO 2 content in the calciner gas was reversed. Results of activity analysis indicate that particles of MgO generated under the calcination temperature of 900-1,000°C had a high activity. In contrast, due to the slight sintering, MgO generated under the calcination temperature of 1,100°C had a low activity. To recycle SO 2 as well as MgO, a temperature range of 900-927°C for TE103 is proposed. These studies will prompt the desulfurization market diversification, reduce the sulfur's dependence on imports for making sulfuric acid, be meaningful to balance the usage of the natural resource in China, and be regarded as a reference for the development of this technology for other similar developing countries.

  6. Tunneling time, exit time and exit momentum in strong field tunnel ionization

    International Nuclear Information System (INIS)

    Teeny, Nicolas

    2016-01-01

    Tunnel ionization belongs to the fundamental processes of atomic physics. It is still an open question when does the electron tunnel ionize and how long is the duration of tunneling. In this work we solve the time-dependent Schroedinger equation in one and two dimensions and use ab initio quantum calculations in order to answer these questions. Additionally, we determine the exit momentum of the tunnel ionized electron from first principles. We find out results that are different from the assumptions of the commonly employed two-step model, which assumes that the electron ionizes at the instant of electric field maximum with a zero momentum. After determining the quantum final momentum distribution of tunnel ionized electrons we show that the two-step model fails to predict the correct final momentum. Accordingly we suggest how to correct the two-step model. Furthermore, we determine the instant at which tunnel ionization starts, which turns out to be different from the instant usually assumed. From determining the instant at which it is most probable for the electron to enter the tunneling barrier and the instant at which it exits we determine the most probable time spent under the barrier. Moreover, we apply a quantum clock approach in order to determine the duration of tunnel ionization. From the quantum clock we determine an average tunneling time which is different in magnitude and origin with respect to the most probable tunneling time. By defining a probability distribution of tunneling times using virtual detectors we relate both methods and explain the apparent discrepancy. The results found have in general an effect on the interpretation of experiments that measure the spectra of tunnel ionized electrons, and specifically on the calibration of the so called attoclock experiments, because models with imprecise assumptions are usually employed in order to interpret experimental results.

  7. Tunneling time, exit time and exit momentum in strong field tunnel ionization

    Energy Technology Data Exchange (ETDEWEB)

    Teeny, Nicolas

    2016-10-18

    Tunnel ionization belongs to the fundamental processes of atomic physics. It is still an open question when does the electron tunnel ionize and how long is the duration of tunneling. In this work we solve the time-dependent Schroedinger equation in one and two dimensions and use ab initio quantum calculations in order to answer these questions. Additionally, we determine the exit momentum of the tunnel ionized electron from first principles. We find out results that are different from the assumptions of the commonly employed two-step model, which assumes that the electron ionizes at the instant of electric field maximum with a zero momentum. After determining the quantum final momentum distribution of tunnel ionized electrons we show that the two-step model fails to predict the correct final momentum. Accordingly we suggest how to correct the two-step model. Furthermore, we determine the instant at which tunnel ionization starts, which turns out to be different from the instant usually assumed. From determining the instant at which it is most probable for the electron to enter the tunneling barrier and the instant at which it exits we determine the most probable time spent under the barrier. Moreover, we apply a quantum clock approach in order to determine the duration of tunnel ionization. From the quantum clock we determine an average tunneling time which is different in magnitude and origin with respect to the most probable tunneling time. By defining a probability distribution of tunneling times using virtual detectors we relate both methods and explain the apparent discrepancy. The results found have in general an effect on the interpretation of experiments that measure the spectra of tunnel ionized electrons, and specifically on the calibration of the so called attoclock experiments, because models with imprecise assumptions are usually employed in order to interpret experimental results.

  8. Chiral tunneling in a twisted graphene bilayer.

    Science.gov (United States)

    He, Wen-Yu; Chu, Zhao-Dong; He, Lin

    2013-08-09

    The perfect transmission in a graphene monolayer and the perfect reflection in a Bernal graphene bilayer for electrons incident in the normal direction of a potential barrier are viewed as two incarnations of the Klein paradox. Here we show a new and unique incarnation of the Klein paradox. Owing to the different chiralities of the quasiparticles involved, the chiral fermions in a twisted graphene bilayer show an adjustable probability of chiral tunneling for normal incidence: they can be changed from perfect tunneling to partial or perfect reflection, or vice versa, by controlling either the height of the barrier or the incident energy. As well as addressing basic physics about how the chiral fermions with different chiralities tunnel through a barrier, our results provide a facile route to tune the electronic properties of the twisted graphene bilayer.

  9. Dependences of the Tunnel Magnetoresistance and Spin Transfer Torque on the Sizes and Concentration of Nanoparticles in Magnetic Tunnel Junctions

    Science.gov (United States)

    Esmaeili, A. M.; Useinov, A. N.; Useinov, N. Kh.

    2018-01-01

    Dependences of the tunnel magnetoresistance and in-plane component of the spin transfer torque on the applied voltage in a magnetic tunnel junction have been calculated in the approximation of ballistic transport of conduction electrons through an insulating layer with embedded magnetic or nonmagnetic nanoparticles. A single-barrier magnetic tunnel junction with a nanoparticle embedded in an insulator forms a double-barrier magnetic tunnel junction. It has been shown that the in-plane component of the spin transfer torque in the double-barrier magnetic tunnel junction can be higher than that in the single-barrier one at the same thickness of the insulating layer. The calculations show that nanoparticles embedded in the tunnel junction increase the probability of tunneling of electrons, create resonance conditions, and ensure the quantization of the conductance in contrast to the tunnel junction without nanoparticles. The calculated dependences of the tunnel magnetoresistance correspond to experimental data demonstrating peak anomalies and suppression of the maximum magnetoresistances at low voltages.

  10. Intrinsic Tunneling in Phase Separated Manganites

    Science.gov (United States)

    Singh-Bhalla, G.; Selcuk, S.; Dhakal, T.; Biswas, A.; Hebard, A. F.

    2009-02-01

    We present evidence of direct electron tunneling across intrinsic insulating regions in submicrometer wide bridges of the phase-separated ferromagnet (La,Pr,Ca)MnO3. Upon cooling below the Curie temperature, a predominantly ferromagnetic supercooled state persists where tunneling across the intrinsic tunnel barriers (ITBs) results in metastable, temperature-independent, high-resistance plateaus over a large range of temperatures. Upon application of a magnetic field, our data reveal that the ITBs are extinguished resulting in sharp, colossal, low-field resistance drops. Our results compare well to theoretical predictions of magnetic domain walls coinciding with the intrinsic insulating phase.

  11. Bulk and surface properties of magnesium peroxide MgO2

    Science.gov (United States)

    Esch, Tobit R.; Bredow, Thomas

    2016-12-01

    Magnesium peroxide has been identified in Mg/air batteries as an intermediate in the oxygen reduction reaction (ORR) [1]. It is assumed that MgO2 is involved in the solid-electrolyte interphase on the cathode surface. Therefore its structure and stability play a crucial role in the performance of Mg/air batteries. In this work we present a theoretical study of the bulk and low-index surface properties of MgO2. All methods give a good account of the experimental lattice parameters for MgO2 and MgO bulk. The reaction energies, enthalpies and free energies for MgO2 formation from MgO are compared among the different DFT methods and with the local MP2 method. A pronounced dependence from the applied functional is found. At variance with a previous theoretical study but in agreement with recent experiments we find that the MgO2 formation reaction is endothermic (HSE06-D3BJ: ΔH = 51.9 kJ/mol). The stability of low-index surfaces MgO2 (001) (Es = 0.96 J/m2) and (011) (Es = 1.98 J/m2) is calculated and compared to the surface energy of MgO (001). The formation energy of neutral oxygen vacancies in the topmost layer of the MgO2 (001) surface is calculated and compared with defect formation energies for MgO (001).

  12. MgO encapsulated mesoporous zeolite for the side chain alkylation of toluene with methanol.

    Science.gov (United States)

    Jiang, Nanzhe; Jin, Hailian; Jeong, Eun-Young; Park, Sang-Eon

    2010-01-01

    Side chain alkylation of toluene with methanol was studied over mesoporous zeolite supported MgO catalysts. MgO were supported onto the carbon templated mesoporous silicalite-1 by direct synthesis route under microwave conditions. This direct synthesis route yields the majority of MgO highly dispersed into the mesopores of the silicalite-1 crystals. The vapor phase alkylation of toluene with methanol was performed over these catalysts under vapor phase conditions at atmospheric pressure. Mesoporous silicalite-1 supported MgO catalysts gave improved yields towards side chain alkylated products compared to the bulk MgO. The higher activity exhibited by 5% MgO supported on mesoporous silicalite compared to the one with 1% MgO can be attributed to the large number of weak basic sites observed from the CO2 TPD.

  13. Atomically Thin Al2O3 Films for Tunnel Junctions

    Science.gov (United States)

    Wilt, Jamie; Gong, Youpin; Gong, Ming; Su, Feifan; Xu, Huikai; Sakidja, Ridwan; Elliot, Alan; Lu, Rongtao; Zhao, Shiping; Han, Siyuan; Wu, Judy Z.

    2017-06-01

    Metal-insulator-metal tunnel junctions are common throughout the microelectronics industry. The industry standard AlOx tunnel barrier, formed through oxygen diffusion into an Al wetting layer, is plagued by internal defects and pinholes which prevent the realization of atomically thin barriers demanded for enhanced quantum coherence. In this work, we employ in situ scanning tunneling spectroscopy along with molecular-dynamics simulations to understand and control the growth of atomically thin Al2O3 tunnel barriers using atomic-layer deposition. We find that a carefully tuned initial H2O pulse hydroxylated the Al surface and enabled the creation of an atomically thin Al2O3 tunnel barrier with a high-quality M -I interface and a significantly enhanced barrier height compared to thermal AlOx . These properties, corroborated by fabricated Josephson junctions, show that atomic-layer deposition Al2O3 is a dense, leak-free tunnel barrier with a low defect density which can be a key component for the next generation of metal-insulator-metal tunnel junctions.

  14. Carpal Tunnel Syndrome

    Science.gov (United States)

    ... a passing cramp? It could be carpal tunnel syndrome. The carpal tunnel is a narrow passageway of ... three times more likely to have carpal tunnel syndrome than men. Early diagnosis and treatment are important ...

  15. A review on all-perovskite multiferroic tunnel junctions

    Directory of Open Access Journals (Sweden)

    Yuewei Yin

    2017-12-01

    Full Text Available Although the basic concept was proposed only about 10 years ago, multiferroic tunnel junctions (MFTJs with a ferroelectric barrier sandwiched between two ferromagnetic electrodes have already drawn considerable interests, driven mainly by its potential applications in multi-level memories and electric field controlled spintronics. The purpose of this article is to review the recent progress of all-perovskite MFTJs. Starting from the key functional properties of the tunneling magnetoresistance, tunneling electroresistance, and tunneling electromagnetoresistance effects, we discuss the main origins of the tunneling electroresistance effect, recent progress in achieving multilevel resistance states in a single device, and the electrical control of spin polarization and transport through the ferroelectric polarization reversal of the tunneling barrier.

  16. AMOC studies of positronium in fine MgO powder

    International Nuclear Information System (INIS)

    Waeyenberge, B. van; Dauwe, C.

    2001-01-01

    A first set of AMOC spectra on fine powdered MgO were measured at the Stuttgart relativistic positron beam facility. A special AMOC spectrometer was set up in order to determine the long lifetimes of ortho-positronium in the powder cavities. The spectra were taken on pellets of pressed powder in air and in an oxygen atmosphere to ensure ortho- to para-positronium conversion. An analysis of the data is made in the light of previous lifetime measurements on MgO. Here the lifetime spectrum was fitted with an age dependent lifetime describing the slow thermalisation of epithermal ortho-positronium between the powder grains. Based on the lifetime spectrum of the integrated AMOC spectra the data could not discriminate between a 5-component model and a model including slow positronium thermalisation. On the other hand, analysis of the age dependent line shape parameter shows better variances for a thermalisation model. (orig.)

  17. AMOC studies of positronium in fine MgO powder

    Energy Technology Data Exchange (ETDEWEB)

    Waeyenberge, B. van; Dauwe, C. [Ghent Univ. (Belgium). Dept. of Subatomic and Radiation Physics; Stoll, H. [Max-Planck-Institut fuer Metallforschung, Stuttgart (Germany)

    2001-07-01

    A first set of AMOC spectra on fine powdered MgO were measured at the Stuttgart relativistic positron beam facility. A special AMOC spectrometer was set up in order to determine the long lifetimes of ortho-positronium in the powder cavities. The spectra were taken on pellets of pressed powder in air and in an oxygen atmosphere to ensure ortho- to para-positronium conversion. An analysis of the data is made in the light of previous lifetime measurements on MgO. Here the lifetime spectrum was fitted with an age dependent lifetime describing the slow thermalisation of epithermal ortho-positronium between the powder grains. Based on the lifetime spectrum of the integrated AMOC spectra the data could not discriminate between a 5-component model and a model including slow positronium thermalisation. On the other hand, analysis of the age dependent line shape parameter shows better variances for a thermalisation model. (orig.)

  18. Molecular series-tunneling junctions.

    Science.gov (United States)

    Liao, Kung-Ching; Hsu, Liang-Yan; Bowers, Carleen M; Rabitz, Herschel; Whitesides, George M

    2015-05-13

    Charge transport through junctions consisting of insulating molecular units is a quantum phenomenon that cannot be described adequately by classical circuit laws. This paper explores tunneling current densities in self-assembled monolayer (SAM)-based junctions with the structure Ag(TS)/O2C-R1-R2-H//Ga2O3/EGaIn, where Ag(TS) is template-stripped silver and EGaIn is the eutectic alloy of gallium and indium; R1 and R2 refer to two classes of insulating molecular units-(CH2)n and (C6H4)m-that are connected in series and have different tunneling decay constants in the Simmons equation. These junctions can be analyzed as a form of series-tunneling junctions based on the observation that permuting the order of R1 and R2 in the junction does not alter the overall rate of charge transport. By using the Ag/O2C interface, this system decouples the highest occupied molecular orbital (HOMO, which is localized on the carboxylate group) from strong interactions with the R1 and R2 units. The differences in rates of tunneling are thus determined by the electronic structure of the groups R1 and R2; these differences are not influenced by the order of R1 and R2 in the SAM. In an electrical potential model that rationalizes this observation, R1 and R2 contribute independently to the height of the barrier. This model explicitly assumes that contributions to rates of tunneling from the Ag(TS)/O2C and H//Ga2O3 interfaces are constant across the series examined. The current density of these series-tunneling junctions can be described by J(V) = J0(V) exp(-β1d1 - β2d2), where J(V) is the current density (A/cm(2)) at applied voltage V and βi and di are the parameters describing the attenuation of the tunneling current through a rectangular tunneling barrier, with width d and a height related to the attenuation factor β.

  19. Tunneling technologies for the collider ring tunnels

    International Nuclear Information System (INIS)

    Frobenius, P.

    1989-01-01

    The Texas site chosen for the Superconducting Super Collider has been studied, and it has been determined that proven, conventional technology and accepted engineering practice are suitable for constructing the collider tunnels. The Texas National Research Laboratory Commission report recommended that two types of tunneling machines be used for construction of the tunnels: a conventional hard rock tunnel boring machine (TBM) for the Austin chalk and a double shielded, rotary TBM for the Taylor marl. Since the tunneling machines usually set the pace for the project, efficient planning, operation, and coordination of the tunneling system components will be critical to the schedule and cost of the project. During design, tunneling rate prediction should be refined by focusing on the development of an effective tunneling system and evaluating its capacity to meet or exceed the required schedules. 8 refs., 13 figs

  20. Deactivation of SCR catalysts by potassium: A study of potential alkali barrier materials

    DEFF Research Database (Denmark)

    Olsen, Brian Kjærgaard; Kügler, Frauke; Castellino, Francesco

    2017-01-01

    The use of coatings in order to protect vanadia based SCR catalysts against potassium poisoning has been studied by lab- and pilot-scale experiments. Three-layer pellets, consisting of a layer ofa potential coating material situated between layers of fresh and potassium poisoned SCR catalyst, were...... the coating process. Potassium had to some extent penetrated the MgO coat, and SEM analysis revealed it to be rather thick and fragile. Despite these observations, the coating did protect the SCR catalyst against potassium poisoning to some degree, leaving promise of further optimization....... used to test the ability of the barrier layer to block the diffusion of potassium across the pellet. Of MgO, sepiolite and Hollandite manganese oxide, MgO was the most effective potassium barrier, and no potassium was detected in the MgO layer upon exposure to SCR conditions for 7 days. Two monoliths...

  1. A submillimetre-wave SIS mixer using NbN/MgO/NbN trilayers grown epitaxially on an MgO substrate

    CERN Document Server

    Uzawa, Y; Saito, A; Takeda, M; Wang, Z

    2002-01-01

    We have designed, fabricated and tested a quasi-optical superconductor-insulator-superconductor (SIS) mixer employing distributed NbN/MgO/NbN tunnel junctions and NbN/MgO/NbN microstriplines at submillimetre-wave frequencies. These trilayers were fabricated by dc- and rf-magnetron sputtering on an MgO substrate at ambient temperature so that the NbN and MgO films were grown epitaxially. Our SIS mixer consists of an MgO hyperhemispherical lens with an antireflection cap and a self-complementary log-periodic antenna made of a single-crystal NbN film, on which the distributed SIS junctions and the two-section impedance transformers were mirror-symmetrically placed at the feed point of the antenna. As designed, the junctions are 0.6 mu m wide and 15.5 mu m long, which is sufficient to absorb the incoming signal along this lossy transmission line, assuming a current density of 10 kA cm sup - sup 2. The mixer showed good I-V characteristics, with subgap-to-normal resistance ratios of about 13, although weak-link br...

  2. Tunneling time and Hartman effect in a ferromagnetic graphene superlattice

    Directory of Open Access Journals (Sweden)

    Farhad Sattari

    2012-03-01

    Full Text Available Using transfer-matrix and stationary phase methods, we study the tunneling time (group delay time in a ferromagnetic monolayer graphene superlattice. The system we peruse consists of a sequence of rectangular barriers and wells, which can be realized by putting a series of electronic gates on the top of ferromagnetic graphene. The magnetization in the two ferromagnetic layers is aligned parallel. We find out that the tunneling time for normal incident is independent of spin state of electron as well as the barrier height and electron Fermi energy while for the oblique incident angles the tunneling time depends on the spin state of electron and has an oscillatory behavior. Also the effect of barrier width on tunneling time is also investigated and shown that, for normal incident, the Hartman effect disappears in a ferromagnetic graphene superlattice but it appears for oblique incident angles when the x component of the electron wave vector in the barrier is imaginary.

  3. Evolution of tunnelling causality and the 'Hartman-Fletcher effect'

    International Nuclear Information System (INIS)

    Olkhovsky, V.S.; Zaichenko, A.K.

    1995-01-01

    A new concept of the macroscopic tunneling time is added to our previous definition of the microscopic tunnelling time. The formally accusal jump of a time advance near the forward barrier wall is interpreted as a result of the superposition and interference of incoming and reflected waves. The reality 'H.-F. effect' is confirmed

  4. Magnetic tunnel junction device having an intermediate layer

    NARCIS (Netherlands)

    2001-01-01

    A magnetic tunnel junction device has a multi-layer structure including a pair of electrode layers of a ferromagnetic material and a tunnel barrier layer of an insulating material between the electrode layers. In order to realize a low resistance, the multi-layer structure also includes an

  5. Resonant tunneling of spin-wave packets via quantized states in potential wells.

    Science.gov (United States)

    Hansen, Ulf-Hendrik; Gatzen, Marius; Demidov, Vladislav E; Demokritov, Sergej O

    2007-09-21

    We have studied the tunneling of spin-wave pulses through a system of two closely situated potential barriers. The barriers represent two areas of inhomogeneity of the static magnetic field, where the existence of spin waves is forbidden. We show that for certain values of the spin-wave frequency corresponding to the quantized spin-wave states existing in the well formed between the barriers, the tunneling has a resonant character. As a result, transmission of spin-wave packets through the double-barrier structure is much more efficient than the sequent tunneling through two single barriers.

  6. Tunneling of heat: Beyond linear response regime

    Science.gov (United States)

    Walczak, Kamil; Saroka, David

    2018-02-01

    We examine nanoscale processes of heat (energy) transfer as carried by electrons tunneling via potential barriers and molecular interconnects between two heat reservoirs (thermal baths). For that purpose, we use Landauer-type formulas to calculate thermal conductance and quadratic correction to heat flux flowing via quantum systems. As an input, we implement analytical expressions for transmission functions related to simple potential barriers and atomic bridges. Our results are discussed with respect to energy of tunneling electrons, temperature, the presence of resonant states, and specific parameters characterizing potential barriers as well as heat carriers. The simplicity of semi-analytical models developed by us allows to fit experimental data and extract crucial information about the values of model parameters. Further investigations are expected for more realistic transmission functions, while time-dependent aspects of nanoscale heat transfer may be addressed by using the concept of wave packets scattered on potential barriers and point-like defects within regular (periodic) nanostructures.

  7. First-principles calculations of the indigo encapsulation and adsorption by MgO nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Sánchez-Ochoa, F., E-mail: fsanchez@ifuap.buap.mx; Cocoletzi, Gregorio H. [Instituto de Física “Ing. Luis Rivera Terrazas,” Benemérita Universidad Autónoma de Puebla, Av. San Claudio y Blvd. 18 Sur, Col. San Manuel, C.P. 72570 Puebla, Pue (Mexico); Canto, Gabriel I. [Departamento de Materiales y Corrosión, Centro de Investigación en Corrosión, Universidad Autónoma de Campeche, Col. Buenavista, C.P. 24039 San Francisco de Campeche, Campeche (Mexico); Takeuchi, Noboru [Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Km 107 Carretera Tijuana-Ensenada, CP. 22800 Ensenada, B.C (Mexico)

    2014-06-07

    We have performed ab-initio calculations to investigate the structural and electronic properties of (m,m) chiral magnesium oxide nanotubes, (m,m)MgONTs, to explore the encapsulation, inclusion, and adsorption of dyes (organic molecules) such as Indigo (IND). Studies start by determining the structural parameters of the MgO nanotubes with different diameters and the IND. The indigo encapsulation into the MgONT is studied considering four (m,m) chiralities which yield 4 different NT diameters. In the endohedral functionalization, the indigo is within the NT at a tilt angle as in previous theoretical studies of organic molecules inside carbon and boron-nitride nanotubes. Results show that the encapsulation is a strong exothermic process with the m = 6 case exhibiting the largest encapsulation energy. It is also explored the indigo adsorption on the NT surface in the parallel and perpendicular configurations. The perpendicular configuration of the IND adsorption on the (8,8)MgONT exhibits the largest energy. The indigo inclusion within the NTs meets a potential barrier when m < 6, however this barrier diminishes as the index increases. Additionally, we have determined the total density of states (DOS), partial DOS, electron charge redistributions, and the highest occupied molecular orbital–lowest unoccupied molecular orbital levels for the NTs with m = 6. Very strong binding energies and electron charge transfer from the IND to NTs is present in the atomic structures.

  8. Spin-dependent tunnelling in magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Tsymbal, Evgeny Y; Mryasov, Oleg N; LeClair, Patrick R

    2003-01-01

    The phenomenon of electron tunnelling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunnelling (SDT) in magnetic tunnel junctions (MTJs) has recently aroused enormous interest and has developed in a vigorous field of research. The large tunnelling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible applications in non-volatile random-access memories and next-generation magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. In this review article we present an overview of this field of research. We discuss various factors that control the spin polarization and magnetoresistance in MTJs. Starting from early experiments on SDT and their interpretation, we consider thereafter recent experiments and models which highlight the role of the electronic structure of the ferromagnets, the insulating layer, and the ferromagnet/insulator interfaces. We also discuss the role of disorder in the barrier and in the ferromagnetic electrodes and their influence on TMR. (topical review)

  9. Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

    International Nuclear Information System (INIS)

    Cleland, A.N.

    1991-04-01

    Experiments investigating the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very small capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters; the tunneling rate in the moderately damped (Q ∼ 1) junction is seen to be reduced by a factor of 300 from that predicted for an undamped junction. The phase is seen to be a good quantum-mechanical variable. The experiments on small capacitance tunnel junctions extend the measurements on the larger-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wavefunction has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias. I present the first clear observation of the Coulomb blockade in single junctions. The electrical environment of the tunnel junction, however, strongly affects the behavior of the junction: higher resistance leads are observed to greatly sharpen the Coulomb blockade over that seen with lower resistance leads. I present theoretical descriptions of how the environment influences the junctions; comparisons with the experimental results are in reasonable agreement

  10. Electronic, magnetic and optical properties of B, C, N and F doped MgO monolayer

    Science.gov (United States)

    Moghadam, A. Dashti; Maskane, P.; Esfandiari, S.

    2018-06-01

    MgO as one of the alkaline earth oxides has various applications in industry. In this work, we aim to investigate the electronic, optical and magnetic properties of MgO monolayers. Furthermore, monolayer structures with substituted B, N, C and F atoms instead of O atom are studied. These results indicate that MgO layer has possessed potential application in optoelectronic and spintronic nano-devices.

  11. Synthesis of MgO Nanoparticles by Solvent Mixed Spray Pyrolysis Technique for Optical Investigation

    OpenAIRE

    Nemade, K. R.; Waghuley, S. A.

    2014-01-01

    Solvent mixed spray pyrolysis technique has attracted a global interest in the synthesis of nanomaterials since reactions can be run in liquid state without further heating. Magnesium oxide (MgO) is a category of the practical semiconductor metal oxides, which is extensively used as catalyst and optical material. In the present study, MgO nanoparticles were successfully synthesized using a solvent mixed spray pyrolysis. The X-ray diffraction pattern confirmed the formation of MgO phase with a...

  12. Tunnel magnetoresistance in double spin filter junctions

    International Nuclear Information System (INIS)

    Saffarzadeh, Alireza

    2003-01-01

    We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron approximation, the dependence of the tunnel magnetoresistance (TMR) on the thickness of the central NM layer, bias voltage and temperature in the double SF junction are studied theoretically. It is shown that the TMR and electron-spin polarization in this structure can reach very large values under suitable conditions. The highest value of the TMR can reach 99%. By an appropriate choice of the thickness of the central NM layer, the degree of spin polarization in this structure will be higher than that of the single SF junctions. These results may be useful in designing future spin-polarized tunnelling devices

  13. Time scales of bias voltage effects in FE/MgO-based magnetic tunnel junctions with voltage-dependent perpendicular anisotropy

    International Nuclear Information System (INIS)

    Lytvynenko, Ia.M.; Hauet, T.; Montaigne, F.; Bibyk, V.V.; Andrieu, S.

    2015-01-01

    Interplay between voltage-induced magnetic anisotropy transition and voltage-induced atomic diffusion is studied in epitaxial V/Fe (0.7 nm)/ MgO/ Fe(5 nm)/Co/Au magnetic tunnel junction where thin Fe soft electrode has in-plane or out-of-plane anisotropy depending on the sign of the bias voltage. We investigate the origin of the slow resistance variation occurring when switching bias voltage in opposite polarity. We demonstrate that the time to reach resistance stability after voltage switching is reduced when increasing the voltage amplitude or the temperature. A single energy barrier of about 0.2 eV height is deduced from temperature dependence. Finally, we demonstrate that the resistance change is not correlated to a change in soft electrode anisotropy. This conclusion contrasts with observations recently reported on analogous systems. - Highlights: • Voltage-induced time dependence of resistance is studied in epitaxial Fe/MgO/Fe. • Resistance change is not related to the bottom Fe/MgO interface. • The effect is thermally activated with an energy barrier of the order of 0.2 eV height

  14. Closed-loop conductance scanning tunneling spectroscopy: demonstrating the equivalence to the open-loop alternative.

    Science.gov (United States)

    Hellenthal, Chris; Sotthewes, Kai; Siekman, Martin H; Kooij, E Stefan; Zandvliet, Harold J W

    2015-01-01

    We demonstrate the validity of using closed-loop z(V) conductance scanning tunneling spectroscopy (STS) measurements for the determination of the effective tunneling barrier by comparing them to more conventional open-loop I(z) measurements. Through the development of a numerical model, the individual contributions to the effective tunneling barrier present in these experiments, such as the work function and the presence of an image charge, are determined quantitatively. This opens up the possibility of determining tunneling barriers of both vacuum and molecular systems in an alternative and more detailed manner.

  15. Carrier tunneling in high magnetic fields

    NARCIS (Netherlands)

    Christianen, P.C.M.; Bruggink, I.E.M.; Maan, J.C.; Vleuten, van der W.C.

    1995-01-01

    Proceedings of the XXIV International School of Semiconducting Coinpounds, Jaszowiec 1995. A magnetic field induced coupling is observed between the Landau levels with different quantum number of two GaAs quantum wells separated by a thin (Ga,Al)As tunnel barrier using

  16. Properties of the ZrO2MgO/MgZrO3NiCr/NiCr triple-layer thermal barrier coating deposited by the atmospheric plasma spray process / Характеристики трехслойных термобарьерных покрытий ZrO2MgO/ MgZrO3NiCr/ NiCr, нанесенных воздушно-плазменным напылением / Svojstva troslojne termo barijerne prevlake ZrO2MgO/ MgZrO3NiCr/ NiCr deponovane atmosferskim plazma sprej procesom

    Directory of Open Access Journals (Sweden)

    Mihailo R. Mrdak

    2016-04-01

    Full Text Available This paper presents the results of the examinations of TBC - ZrO2MgO / MgZrO3NiCr / NiCr thermal barrier layers deposited by the plasma spray process at the atmospheric pressure on substrates of Al alloys. In order to obtain the structural and mechanical properties of layers, which will provide a good heat and abrasion protection of the tail elevators of aircraft J-22 when firing '.Lightning' and 'Thunder' rockets, the deposition of three powder types was performed on 0.6 mm thick Al alloy substrates. This study describes a procedure of using triple-layer TBC coatings as a good combination among many available ones, which gives a good compromise between thermal protection and resistance to abrasion for protecting aircraft tail elevators. The study is mainly based on the experimental approach. The evaluation of the mechanical properties of layers was done by the examination of microhardness by method HV0.3 and bond strength on the tensile machine. The structure of layers was examined by the method of light microscopy while the surface of ZrO2MgO ceramic layers was examined by the method of scanning electron microscopy (SEM.The thermal protection of TBC layers and resistance to abrasion were tested in the tunnel of the Military Technical Institute, Zarkovo. The obtained characteristics of the surface layers and the rocket firing simulations have proven the triple-layer system of TBC coatings reliable. / В данной статье представлены результаты испытаний термобарьерных покрытий ТБС ZrO2MgO/MgZrO3NiCr/NiCr, нанесенных воздушно-плазменным напылением при атмосферном давлении на субстраты сплавов Al. Испытания проводились с целью получения структурных и механических характеристик слоев, обеспечивающих ка

  17. Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

    International Nuclear Information System (INIS)

    Cleland, A.N.

    1991-01-01

    Experiments investigated the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very-small-capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson-phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters. The experiments on small-capacitance tunnel junctions extend the measurements on the large-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wave function has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias

  18. The Melting Curve and Premelting of MgO

    OpenAIRE

    Cohen, R. E.; Weitz, J. S.

    1996-01-01

    The melting curve for MgO was obtained using molecular dynamics and a non-empirical, many-body potential. We also studied premelting effects by computing the dynamical structure factor in the crystal on approach to melting. The melting curve simulations were performed with periodic boundary conditions with cells up to 512 atoms using the ab-initio Variational Induced Breathing (VIB) model. The melting curve was obtained by computing $% \\Delta H_m$ and $\\Delta V_m$ and integrating the Clapeyro...

  19. Positronium deuteride and hydride in MgO crystals

    OpenAIRE

    Monge, M. A.; Pareja, R.; González, R.; Chen, Y.

    1996-01-01

    Low-temperature positron lifetime and Doppler broadening measurements were made in MgO crystals containing D− or H− ions in order to investigate the temperature dependence of the positron trapping by D− and H− ions and elucidate the possible formation of PsD (PsH) states. Positrons are trapped at D− and H− ions once the oxygen vacancies, which are more effective positron traps, are eliminated by annealing the crystals at high temperatures in a reducing atmosphere. From the temperature depende...

  20. Spin transport in spin filtering magnetic tunneling junctions.

    Science.gov (United States)

    Li, Yun; Lee, Eok Kyun

    2007-11-01

    Taking into account spin-orbit coupling and s-d interaction, we investigate spin transport properties of the magnetic tunneling junctions with spin filtering barrier using Landauer-Büttiker formalism implemented with the recursive algorithm to calculate the real-space Green function. We predict completely different bias dependence of negative tunnel magnetoresistance (TMR) between the systems composed of nonmagnetic electrode (NM)/ferromagnetic barrier (FB)/ferromagnet (FM) and NM/FB/FM/NM spin filtering tunnel junctions (SFTJs). Analyses of the results provide us possible ways of designing the systems which modulate the TMR in the negative magnetoresistance regime.

  1. Setting up tunneling conditions by means of Bohmian mechanics

    Energy Technology Data Exchange (ETDEWEB)

    Sanz, A S; Miret-Artes, S, E-mail: asanz@iff.csic.es, E-mail: s.miret@iff.csic.es [Instituto de Fisica Fundamental-CSIC, Serrano 123, 28006 Madrid (Spain)

    2011-12-02

    Usually tunneling is established after imposing some matching conditions on the (time-independent) wavefunction and its first derivative at the boundaries of a barrier. Here an alternative scheme is proposed to determine tunneling and estimate transmission probabilities in time-dependent problems, which takes advantage of the trajectory picture provided by Bohmian mechanics. From this theory, a general functional expression for the transmission probability in terms of the system initial state can be reached. This expression is used here to analyze tunneling properties and estimate transmissions in the case of initial Gaussian wave packets colliding with ramp-like barriers. (paper)

  2. Tunneling in a self-consistent dynamic image potential

    International Nuclear Information System (INIS)

    Rudberg, B.G.R.; Jonson, M.

    1991-01-01

    We have calculated the self-consistent effective potential for an electron tunneling through a square barrier while interacting with surface plasmons. This potential reduces to the classical image potential in the static limit. In the opposite limit, when the ''velocity'' of the tunneling electron is large, it reduces to the unperturbed square-barrier potential. For a wide variety of parameters the dynamic effects on the transmission coefficient T=|t 2 | can, for instance, be related to the Buettiker-Landauer traversal time for tunneling, given by τ BL =ℎ|d lnt/dV|

  3. Tunneling of a coupled system

    International Nuclear Information System (INIS)

    Avishai, Y.

    1985-01-01

    We consider tunneling through a potential barrier V(x) in the presence of a coupling term W(x,y). Let H(y) be the internal Hamiltonian associated with the coordinate y and let E 0 (x) be the ground state energy of the operator H(x;y) = H(y) + W(x,y) in which x is a parameter. Our result for the tunneling probability (in the WKB approximation) is P = exp(2i ∫ k 0 (x)dx) where, at energy E, k 0 (x) = [E-E 0 (x)-V(x)]sup(1/2)/(h/2π) is the local wave number in the presence of coupling. (orig.)

  4. Tunneling and resonant conductance in one-dimensional molecular structures

    International Nuclear Information System (INIS)

    Kozhushner, M.A.; Posvyanskii, V.S.; Oleynik, I.I.

    2005-01-01

    We present a theory of tunneling and resonant transitions in one-dimensional molecular systems which is based on Green's function theory of electron sub-barrier scattering off the structural units (or functional groups) of a molecular chain. We show that the many-electron effects are of paramount importance in electron transport and they are effectively treated using a formalism of sub-barrier scattering operators. The method which calculates the total scattering amplitude of the bridge molecule not only predicts the enhancement of the amplitude of tunneling transitions in course of tunneling electron transfer through onedimensional molecular structures but also allows us to interpret conductance mechanisms by calculating the bound energy spectrum of the tunneling electron, the energies being obtained as poles of the total scattering amplitude of the bridge molecule. We found that the resonant tunneling via bound states of the tunneling electron is the major mechanism of electron conductivity in relatively long organic molecules. The sub-barrier scattering technique naturally includes a description of tunneling in applied electric fields which allows us to calculate I-V curves at finite bias. The developed theory is applied to explain experimental findings such as bridge effect due to tunneling through organic molecules, and threshold versus Ohmic behavior of the conductance due to resonant electron transfer

  5. Discussion on event horizon and quantum ergosphere of evaporating black holes in a tunnelling framework

    International Nuclear Information System (INIS)

    Zhang Jingyi; Zhao Zheng

    2011-01-01

    In this paper, with the Parikh-Wilczek tunnelling framework the positions of the event horizon of the Vaidya black hole and the Vaidya-Bonner black hole are calculated, respectively. We find that the event horizon and the apparent horizon of these two black holes correspond, respectively, to the two turning points of the Hawking radiation tunnelling barrier. That is, the quantum ergosphere coincides with the tunnelling barrier. Our calculation also implies that the Hawking radiation comes from the apparent horizon.

  6. The dynamical conductance of graphene tunnelling structures

    International Nuclear Information System (INIS)

    Zhang Huan; Chan, K S; Lin Zijing

    2011-01-01

    The dynamical conductances of graphene tunnelling structures were numerically calculated using the scattering matrix method with the interaction effect included in a phenomenological approach. The overall single-barrier dynamical conductance is capacitative. Transmission resonances in the single-barrier structure lead to dips in the capacitative imaginary part of the response. This is different from the ac responses of typical semiconductor nanostructures, where transmission resonances usually lead to inductive peaks. The features of the dips depend on the Fermi energy. When the Fermi energy is below half of the barrier height, the dips are sharper. When the Fermi energy is higher than half of the barrier height, the dips are broader. Inductive behaviours can be observed in a double-barrier structure due to the resonances formed by reflection between the two barriers.

  7. The dynamical conductance of graphene tunnelling structures.

    Science.gov (United States)

    Zhang, Huan; Chan, K S; Lin, Zijing

    2011-12-16

    The dynamical conductances of graphene tunnelling structures were numerically calculated using the scattering matrix method with the interaction effect included in a phenomenological approach. The overall single-barrier dynamical conductance is capacitative. Transmission resonances in the single-barrier structure lead to dips in the capacitative imaginary part of the response. This is different from the ac responses of typical semiconductor nanostructures, where transmission resonances usually lead to inductive peaks. The features of the dips depend on the Fermi energy. When the Fermi energy is below half of the barrier height, the dips are sharper. When the Fermi energy is higher than half of the barrier height, the dips are broader. Inductive behaviours can be observed in a double-barrier structure due to the resonances formed by reflection between the two barriers.

  8. Voltage and temperature dependence of the grain boundary tunneling magnetoresistance in manganites

    OpenAIRE

    Hoefener, C.; Philipp, J. B.; Klein, J.; Alff, L.; Marx, A.; Buechner, B.; Gross, R.

    2000-01-01

    We have performed a systematic analysis of the voltage and temperature dependence of the tunneling magnetoresistance (TMR) of grain boundaries (GB) in the manganites. We find a strong decrease of the TMR with increasing voltage and temperature. The decrease of the TMR with increasing voltage scales with an increase of the inelastic tunneling current due to multi-step inelastic tunneling via localized defect states in the tunneling barrier. This behavior can be described within a three-current...

  9. The neutron transmission of single crystal MgO filters

    International Nuclear Information System (INIS)

    Carpenter, J.M.; Hilleke, R.O.

    1989-01-01

    We have measured and analyzed the wavelength dependence of the transmission probability of a beam of neutrons passing through a single crystal MgO filter at 77 K. The 12.7 cm filter transmits 70% or more of the incident beam at wavelengths greater than about 1.8 A. At shorter wavelengths the transmission probability drops sharply, with 50% transmission occurring at about 1.2 A, and 1% transmission for the range 0.1-0.4 A. We have determined that cooling the filter to 77 K improves the transmission of >1 A neutrons, while further cooling to 25 K shows little additional improvement, and no improvement for short wavelengths. We have identified the wavelengths of the sharp dips in the transmission found in this region caused by Bragg scattering in MgO. We also show how these peaks may be used to calibrate the wavelength scale of time-of-flight measurements taken on instruments using similar filters. (orig.)

  10. Stabilization of Reactive MgO Surfaces by Ni Doping

    Science.gov (United States)

    Mazheika, Aliaksei; Levchenko, Sergey V.

    Ni-MgO solid solutions are promising materials for catalytic reduction of CO2 and dry reforming of CH4. To explain the catalytic activity, an ab initio study of Ni-substitutional defects in MgO (NiMg) has been performed. At first, the validation of the theory level was done. We compared results of CCSD(T) embedded-cluster calculations of NiMg formation energies and adsorption energies of CO, CO2 and H2 on them to the HSE(α) hybrid DFT functional with the fraction of the exact exchange α varied between 0 and 1. HSE(0.3) was found to be the best compromise in this study. Our periodic HSE(0.3) calculations show that NiMg defects are most stable at corner sites, followed by steps, and are least stable at (001) terraces. Thus, Ni-doping stabilizes stepped MgO surfaces. The dissociative adsorption of H2 on the terrace is found to be endothermic (+ 1 . 1 eV), whereas on (110) surface with NiMg it is highly exothermic (- 1 . 6 eV). Adsorbed CO2 is also significantly stabilized (- 0 . 6 vs. - 2 . 2 eV). These findings explain recent microcalorimetry measurements of H2 and CO2 adsorption at doped Ni-MgO samples. partially supported by UniCat (Deutsche Forschungsgemeinschaft).

  11. Understanding Quantum Tunneling through Quantum Monte Carlo Simulations.

    Science.gov (United States)

    Isakov, Sergei V; Mazzola, Guglielmo; Smelyanskiy, Vadim N; Jiang, Zhang; Boixo, Sergio; Neven, Hartmut; Troyer, Matthias

    2016-10-28

    The tunneling between the two ground states of an Ising ferromagnet is a typical example of many-body tunneling processes between two local minima, as they occur during quantum annealing. Performing quantum Monte Carlo (QMC) simulations we find that the QMC tunneling rate displays the same scaling with system size, as the rate of incoherent tunneling. The scaling in both cases is O(Δ^{2}), where Δ is the tunneling splitting (or equivalently the minimum spectral gap). An important consequence is that QMC simulations can be used to predict the performance of a quantum annealer for tunneling through a barrier. Furthermore, by using open instead of periodic boundary conditions in imaginary time, equivalent to a projector QMC algorithm, we obtain a quadratic speedup for QMC simulations, and achieve linear scaling in Δ. We provide a physical understanding of these results and their range of applicability based on an instanton picture.

  12. Addressing student models of energy loss in quantum tunnelling

    International Nuclear Information System (INIS)

    Wittmann, Michael C; Morgan, Jeffrey T; Bao Lei

    2005-01-01

    We report on a multi-year, multi-institution study to investigate students' reasoning about energy in the context of quantum tunnelling. We use ungraded surveys, graded examination questions, individual clinical interviews and multiple-choice exams to build a picture of the types of responses that students typically give. We find that two descriptions of tunnelling through a square barrier are particularly common. Students often state that tunnelling particles lose energy while tunnelling. When sketching wavefunctions, students also show a shift in the axis of oscillation, as if the height of the axis of oscillation indicated the energy of the particle. We find inconsistencies between students' conceptual, mathematical and graphical models of quantum tunnelling. As part of a curriculum in quantum physics, we have developed instructional materials designed to help students develop a more robust and less inconsistent picture of tunnelling, and present data suggesting that we have succeeded in doing so

  13. Generality of the Hartman and Fletcher effect for the mean tunneling time in nonrelativistic particle and photon tunnelling without absorption and dissipation

    International Nuclear Information System (INIS)

    Jakiel, J.; Olkhovsky, V.S.

    1998-01-01

    It is known that, under certain conditions, the tunnelling time becomes independent of barrier width (the Hartman and Fletcher effect). Here, the generality of this effect is shown for mean tunnelling times in all known nonrelativistic approaches, in the cases of rectangular potential barriers without absorption and dissipation. On the base of this effect and the reshaping phenomenon, taking the analogy between nonrelativistic-particle and photon tunnelling into, account, one can self-consistently explain the observed superluminal effective (group) velocities in various photon tunnelling experiments without violation of the Einstein causality

  14. Low cost porous MgO substrates for oxygen transport membranes

    DEFF Research Database (Denmark)

    Kothanda Ramachandran, Dhavanesan; Søgaard, Martin; Clemens, F.

    2016-01-01

    This paper delineates the fabrication of porous magnesium oxide (MgO) ceramics with high porosity and gas permeability by warm pressing using pre-calcined MgO powder and fugitive pore former (combination of graphite and polymethyl methacrylate). Effect of pore former on the microstructure...

  15. Technical Report on the Impact of MgO on Defense Waste Processing Facility

    International Nuclear Information System (INIS)

    Schultz, R.L.

    2000-01-01

    The purpose of this study was to determine the effect(s) of removing MgO from DWPF frits to assess the impact on liquidus temperature and the durability of the glass product. Removal of MgO from the frit was hypothesized to lead to a decrease in liquidus temperature and thereby allow increased waste loading

  16. Effect of stabilizer on optical and structural properties of MgO thin ...

    Indian Academy of Sciences (India)

    and are not easy to handle due to high moisture sensitivity. Metal salts include ... diethanolamine (DEA), triethanolamine (TEA) and acety- lacetone .... SEM analysis. Figure 9 shows SEM micrographs of MgO films prepared by three different sols. SEM micrographs of MgO thin films confirm difference between porosity of.

  17. Microstructure of pulsed-laser deposited PZT on polished and annealed MGO substrates

    NARCIS (Netherlands)

    King, S.L.; Coccia, L.G.; Gardeniers, Johannes G.E.; Boyd, I.W.

    1996-01-01

    Thin films of Lead-Zirconate-Titanate (PZT) have been grown by pulsed-laser-deposition (PLD) onto polished MgO substrates both with and without pre-annealing. The surface morphology of polished MgO substrates, which are widely used for deposition, is examined by AFM. Commercially available,

  18. Mangotoxin production of Pseudomonas syringae pv. syringae is regulated by MgoA.

    Science.gov (United States)

    Carrión, Víctor J; van der Voort, Menno; Arrebola, Eva; Gutiérrez-Barranquero, José A; de Vicente, Antonio; Raaijmakers, Jos M; Cazorla, Francisco M

    2014-02-21

    The antimetabolite mangotoxin is a key factor in virulence of Pseudomonas syringae pv. syringae strains which cause apical necrosis of mango trees. Previous studies showed that mangotoxin biosynthesis is governed by the mbo operon. Random mutagenesis led to the identification of two other gene clusters that affect mangotoxin biosynthesis. These are the gacS/gacA genes and mgo operon which harbors the four genes mgoBCAD. The current study shows that disruption of the nonribosomal peptide synthetase (NRPS) gene mgoA resulted in loss of mangotoxin production and reduced virulence on tomato leaves. Transcriptional analyses by qPCR and promoter reporter fusions revealed that mbo expression is regulated by both gacS/gacA and mgo genes. Also, expression of the mgo operon was shown to be regulated by gacS/gacA. Heterologous expression under the native promoter of the mbo operon resulted in mangotoxin production in non-producing P. syringae strains, but not in other Pseudomonas species. Also introduction of the mbo and mgo operons in nonproducing P. protegens Pf-5 did not confer mangotoxin production but did enhance transcription of the mbo promoter. From the data obtained in this study, we conclude that both mbo and mgo operons are under the control of the gacS/gacA two-component system and that the MgoA product acts as a positive regulator of mangotoxin biosynthesis.

  19. New Knowledge of tunneling from photonic experiments

    International Nuclear Information System (INIS)

    Nimtz, G.

    1997-01-01

    Photonic experiments have shown, that the propagation of evanescent (tunneling) modes can proceed at speeds faster than the velocity of light in vacuum (superluminal). The superluminal velocities include signal and energy propagation. The analogy between the classical Helmholtz equation and the quantum mechanical Schroedinger equation was quantitatively proved in classical photonic experiments. The Hartman effect, i.e. the prediction that the tunneling time is independent of the barrier length was for the first time evidenced in a photonic analogous tunneling experiment by Enders and Nimtz. It is also shown, that the resonant state life time is not determined by the barrier traversal time. For electronic tunneling devices it follows, that the quantum mechanical phase time calculations indeed deliver the relevant intrinsic tunneling time and consequently allow to predict the dynamical specification of a device. The present theoretical descriptions of the propagation of evanescent modes is not fully compatible with the experimental situation. Superluminal signal and energy transport has been measured, and this has to be properly analyzed. May the advanced field solutions help to obtain a satisfactory theoretical description of the recent experimental results of the propagation of evanescent modes? (author)

  20. Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions

    KAUST Repository

    Useinov, Arthur; Deminov, R. G.; Useinov, Niazbeck Kh H; Tagirov, Lenar R.

    2010-01-01

    as a tunneling barrier between the metallic electrodes, is comparable with the mean-free path of electrons. The dependence of the TMR on the bias voltage, physical parameters of the dielectric barrier, and spin polarization of the electrodes is studied

  1. Transonic Dynamics Tunnel (TDT)

    Data.gov (United States)

    Federal Laboratory Consortium — The Transonic Dynamics Tunnel (TDT) is a continuous flow wind-tunnel facility capable of speeds up to Mach 1.2 at stagnation pressures up to one atmosphere. The TDT...

  2. Quantum theory of tunneling

    CERN Document Server

    Razavy, Mohsen

    2014-01-01

    In this revised and expanded edition, in addition to a comprehensible introduction to the theoretical foundations of quantum tunneling based on different methods of formulating and solving tunneling problems, different semiclassical approximations for multidimensional systems are presented. Particular attention is given to the tunneling of composite systems, with examples taken from molecular tunneling and also from nuclear reactions. The interesting and puzzling features of tunneling times are given extensive coverage, and the possibility of measurement of these times with quantum clocks are critically examined. In addition by considering the analogy between evanescent waves in waveguides and in quantum tunneling, the times related to electromagnetic wave propagation have been used to explain certain aspects of quantum tunneling times. These topics are treated in both non-relativistic as well as relativistic regimes. Finally, a large number of examples of tunneling in atomic, molecular, condensed matter and ...

  3. Road and Railroad Tunnels

    Data.gov (United States)

    Department of Homeland Security — Tunnels in the United States According to the HSIP Tiger Team Report, a tunnel is defined as a linear underground passageway open at both ends. This dataset is based...

  4. Hypersonic Tunnel Facility (HTF)

    Data.gov (United States)

    Federal Laboratory Consortium — The Hypersonic Tunnel Facility (HTF) is a blow-down, non-vitiated (clean air) free-jet wind tunnel capable of testing large-scale, propulsion systems at Mach 5, 6,...

  5. Evaporation mechanisms of MgO in laser assisted atom probe tomography

    KAUST Repository

    Mazumder, Baishakhi

    2011-05-01

    In this paper the field evaporation properties of bulk MgO and sandwiched MgO layers in Fe are compared using laser assisted Atom Probe Tomography. The comparison of flight time spectra gives an estimate of the evaporation times as a function of the wavelength and the laser energy. It is shown that the evaporation takes place in two steps on two different time scales in MgO. It is also shown that as long as the MgO layer is buried in Fe, the evaporation is dominated by the photon absorption in Fe layer at the tip apex. Eventually the evaporation process of MgO is discussed based on the difference between the bulk materials and the multilayer samples. © 2010 Elsevier B.V.

  6. Correlation between ferromagnetism and defects in MgO nanocrystals studied by positron annihilation

    International Nuclear Information System (INIS)

    Wang, D.D.; Chen, Z.Q.; Li, C.Y.; Li, X.F.; Cao, C.Y.; Tang, Z.

    2012-01-01

    High purity MgO nanopowders were pressed into pellets and annealed in air from 100 to 1400 °C. Variation of the microstructures was investigated by X-ray diffraction and positron annihilation spectroscopy. Annealing induces an increase in the MgO grain size from 27 to 60 nm with temperature increasing up to 1400 °C. Positron annihilation measurements reveal vacancy defects including Mg vacancies, vacancy clusters, microvoids and large pores in the grain boundary region. Rapid recovery of Mg monovacancies and vacancy clusters was observed after annealing above 1200 °C. Room temperature ferromagnetism was observed for MgO nanocrystals annealed at 100, 700, and 1000 °C. However, after 1400 °C annealing, MgO nanocrystals turn into diamagnetic. Our results suggest that the room temperature ferromagnetism in MgO nanocrystals might originate from the interfacial defects.

  7. Correlation between ferromagnetism and defects in MgO nanocrystals studied by positron annihilation

    Energy Technology Data Exchange (ETDEWEB)

    Wang, D.D. [Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072 (China); Chen, Z.Q., E-mail: chenzq@whu.edu.cn [Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072 (China); Li, C.Y.; Li, X.F. [Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072 (China); Cao, C.Y.; Tang, Z. [Department of Electronic and Engineering, East China Normal University, Shanghai 200241 (China)

    2012-07-15

    High purity MgO nanopowders were pressed into pellets and annealed in air from 100 to 1400 Degree-Sign C. Variation of the microstructures was investigated by X-ray diffraction and positron annihilation spectroscopy. Annealing induces an increase in the MgO grain size from 27 to 60 nm with temperature increasing up to 1400 Degree-Sign C. Positron annihilation measurements reveal vacancy defects including Mg vacancies, vacancy clusters, microvoids and large pores in the grain boundary region. Rapid recovery of Mg monovacancies and vacancy clusters was observed after annealing above 1200 Degree-Sign C. Room temperature ferromagnetism was observed for MgO nanocrystals annealed at 100, 700, and 1000 Degree-Sign C. However, after 1400 Degree-Sign C annealing, MgO nanocrystals turn into diamagnetic. Our results suggest that the room temperature ferromagnetism in MgO nanocrystals might originate from the interfacial defects.

  8. Correlation between ferromagnetism and defects in MgO nanocrystals studied by positron annihilation

    Science.gov (United States)

    Wang, D. D.; Chen, Z. Q.; Li, C. Y.; Li, X. F.; Cao, C. Y.; Tang, Z.

    2012-07-01

    High purity MgO nanopowders were pressed into pellets and annealed in air from 100 to 1400 °C. Variation of the microstructures was investigated by X-ray diffraction and positron annihilation spectroscopy. Annealing induces an increase in the MgO grain size from 27 to 60 nm with temperature increasing up to 1400 °C. Positron annihilation measurements reveal vacancy defects including Mg vacancies, vacancy clusters, microvoids and large pores in the grain boundary region. Rapid recovery of Mg monovacancies and vacancy clusters was observed after annealing above 1200 °C. Room temperature ferromagnetism was observed for MgO nanocrystals annealed at 100, 700, and 1000 °C. However, after 1400 °C annealing, MgO nanocrystals turn into diamagnetic. Our results suggest that the room temperature ferromagnetism in MgO nanocrystals might originate from the interfacial defects.

  9. Point defects and magnetic properties of neutron irradiated MgO single crystal

    Directory of Open Access Journals (Sweden)

    Mengxiong Cao

    2017-05-01

    Full Text Available (100-oriented MgO single crystals were irradiated to introduce point defects with different neutron doses ranging from 1.0×1016 to 1.0×1020 cm-2. The point defect configurations were studied with X-ray diffuse scattering and UV-Vis absorption spectra. The isointensity profiles of X-ray diffuse scattering caused by the cubic and double-force point defects in MgO were theoretically calculated based on the Huang scattering theory. The magnetic properties at different temperature were measured with superconducting quantum interference device (SQUID. The reciprocal space mappings (RSMs of irradiated MgO revealed notable diffuse scattering. The UV-Vis spectra indicated the presence of O Frenkel defects in irradiated MgO. Neutron-irradiated MgO was diamagnetic at room temperature and became ferromagnetic at low temperature due to O Frenkel defects induced by neutron-irradiation.

  10. Evaporation mechanisms of MgO in laser assisted atom probe tomography

    KAUST Repository

    Mazumder, Baishakhi; Vella, Angela; Dé conihout, Bernard; Al-Kassab, Talaat

    2011-01-01

    In this paper the field evaporation properties of bulk MgO and sandwiched MgO layers in Fe are compared using laser assisted Atom Probe Tomography. The comparison of flight time spectra gives an estimate of the evaporation times as a function of the wavelength and the laser energy. It is shown that the evaporation takes place in two steps on two different time scales in MgO. It is also shown that as long as the MgO layer is buried in Fe, the evaporation is dominated by the photon absorption in Fe layer at the tip apex. Eventually the evaporation process of MgO is discussed based on the difference between the bulk materials and the multilayer samples. © 2010 Elsevier B.V.

  11. Effects of the finite duration of quantum tunneling in laser-assisted scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Hagmann, M.J.

    1994-01-01

    Previous measurements of tunnel conductance in heterostructures and experiments with Josephson junctions suggest quantum tunneling has a definite duration. The authors use semiclassical methods to determine the effects of this delay on the tunneling current in a laser-assisted STM. A planar-planar STM model is used with the exact multiple image potential, and the energy distribution for a free-electron metal. It is necessary to average over the phase at barrier entry, and iteration with back propagated solutions is required to obtain the transmission coefficients for evenly spaced phases and specified energies at barrier entry. The simulations suggest that the dependence of the tunneling current on the wavelength of illumination can serve as a basis for determining the duration of barrier traversal. A power flux density of 10 11 W/m 2 would be required at several wavelengths from 1 to 10 μm. It is possible that thermal effects could be separated from the modeled phenomena by determining the time dependence of the tunneling current with a pulsed laser

  12. Improved virus removal in ceramic depth filters modified with MgO.

    Science.gov (United States)

    Michen, Benjamin; Fritsch, Johannes; Aneziris, Christos; Graule, Thomas

    2013-02-05

    Ceramic filters, working on the depth filtration principle, are known to improve drinking water quality by removing human pathogenic microorganisms from contaminated water. However, these microfilters show no sufficient barrier for viruses having diameters down to 20 nm. Recently, it was shown that the addition of positively charged materials, for example, iron oxyhydroxide, can improve virus removal by adsorption mechanisms. In this work, we modified a common ceramic filter based on diatomaceous earth by introducing a novel virus adsorbent material, magnesium oxyhydroxide, into the filter matrix. Such filters showed an improved removal of about 4-log in regard to bacteriophages MS2 and PhiX174. This is explained with the electrostatic enhanced adsorption approach that is the favorable adsorption of negatively charged viruses onto positively charged patches in an otherwise negatively charged filter matrix. Furthermore, we provide theoretical evidence applying calculations according to Derjaguin-Landau-Verwey-Overbeek theory to strengthen our experimental results. However, modified filters showed a significant variance in virus removal efficiency over the course of long-term filtration experiments with virus removal increasing with filter operation time (or filter aging). This is explained by transformational changes of MgO in the filter upon contact with water. It also demonstrates that filter history is of great concern when filters working on the adsorption principles are evaluated in regard to their retention performance as their surface characteristics may alter with use.

  13. Epitaxial growth of tungsten layers on MgO(001)

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Pengyuan; Ozsdolay, Brian D.; Gall, Daniel, E-mail: galld@rpi.edu [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2015-11-15

    Smooth single crystal W(001) layers were grown on MgO(001) substrates by magnetron sputtering at 900 °C. X-ray diffraction ω–2θ scans, ω-rocking curves, pole figures, and reciprocal space maps indicate a 45°-rotated epitaxial relationship: (001){sub W}‖(001){sub MgO} and [010]{sub W}‖[110]{sub MgO}, and a relaxed lattice constant of 3.167 ± 0.001 nm. A residual in-plane biaxial compressive strain is primarily attributed to differential thermal contraction after growth and decreases from −0.012 ± 0.001 to −0.001 ± 0.001 with increasing layer thickness d = 4.8–390 nm, suggesting relaxation during cooling by misfit dislocation growth through threading dislocation glide. The in-plane x-ray coherence length increases from 3.4 to 33.6 nm for d = 4.8–390 nm, while the out-of-plane x-ray coherence length is identical to the layer thickness for d ≤ 20 nm, but is smaller than d for d ≥ 49.7 nm, indicating local strain variations along the film growth direction. X-ray reflectivity analyses indicate that the root-mean-square surface roughness increases from 0.50 ± 0.05 to 0.95 ± 0.05 nm for d = 4.8–19.9 nm, suggesting a roughness exponent of 0.38, but remains relatively constant for d > 20 nm with a roughness of 1.00 ± 0.05 nm at d = 47.9 nm.

  14. Spectroscopic, thermal, and electrical properties of MgO/ polyvinyl pyrrolidone/ polyvinyl alcohol nanocomposites

    Science.gov (United States)

    Mohammed, Gh.; El Sayed, Adel M.; Morsi, W. M.

    2018-04-01

    In this study, we aimed to control the optical and electrical properties of polyvinyl alcohol (PVA) in order to broaden its industrial and technological applications, which we achieved by blending PVA with polyvinyl pyrrolidone (PVP) and adding sol-gel prepared MgO nanopowder. The blended film and nanocomposite films were prepared using the solution casting technique. X-ray diffraction analyses showed that the crystallite size was ∼18.4 nm for MgO and the highest degree of crystallinity (XC) in the films was about 24.34% at 1.0 wt% MgO. High resolution transmission electron microscopy determined the nanoribbon morphology of MgO. Scanning electron microscopy (SEM) indicated the uniform distribution of the MgO nanoribbons on the surfaces of the PVA/PVP films. SEM and Fourier transform infrared spectroscopy also confirmed the interaction between the blend and MgO fillers. The effects of the additives on the glass transition (Tg) and melting (Tm) temperatures were evaluated by differential thermal analysis and differential scanning calorimetry. The appearance of one melting point confirmed the miscibility of the two polymers. According to ultraviolet-visible-near infrared spectroscopy measurements, the optical properties and optical constants of PVA could be adjusted by the addition of PVP and MgO, where the optical band gap (Eg) determined for PVA increased with the PVP content, whereas it decreased to 4.8 eV as the MgO content increased. The DC conductivity (σdc) of the films increased whereas the activation energy (Ea) decreased after the addition of MgO, possibly because the nanoribbon shape fixed the preferred conducting pathways. In addition, MgO could break the H-bond in sbnd OH groups of the blends to allow the free movement of the molecular chains.

  15. Time scales of tunneling decay of a localized state

    International Nuclear Information System (INIS)

    Ban, Yue; Muga, J. G.; Sherman, E. Ya.; Buettiker, M.

    2010-01-01

    Motivated by recent time-domain experiments on ultrafast atom ionization, we analyze the transients and time scales that characterize, aside from the relatively long lifetime, the decay of a localized state by tunneling. While the tunneling starts immediately, some time is required for the outgoing flux to develop. This short-term behavior depends strongly on the initial state. For the initial state, tightly localized so that the initial transients are dominated by over-the-barrier motion, the time scale for flux propagation through the barrier is close to the Buettiker-Landauer traversal time. Then a quasistationary, slow-decay process follows, which sets ideal conditions for observing diffraction in time at longer times and distances. To define operationally a tunneling time at the barrier edge, we extrapolate backward the propagation of the wave packet that escaped from the potential. This extrapolated time is considerably longer than the time scale of the flux and density buildup at the barrier edge.

  16. Quantum tunneling of magnetization in solids

    International Nuclear Information System (INIS)

    Stamp, P.C.E.; Barbara, B.

    1992-01-01

    Magnetic solids should, under certain circumstances, show macroscopic quantum behavior, in which coherence exists between completely distinct magnetization states, each involving a very large number of spins (∼10 12 spins). This article reviews the recent work in this field, concentrating particularly on macroscopic quantum tunneling (MQT) of magnetization. The two main phenomena discussed are the tunneling of magnetization in single-domain particles or grains (in which some 10 3 - 10 4 spins rotate together through an energy barrier), and the tunneling of domain walls in films or in bulk magnets; where walls containing ∼10 10 spins may tunnel off a pinning potential, or from one pinning center to another. Some attention is also given to the quantum nucleation of magnetization reversal in a bulk magnet, and to the quantum motion of other magnetic solitons (such as vortices). After a thorough analysis of the basic grain and wall tunneling phenomena, the authors continue on to a discussion of the various dissipative or decoherence mechanisms, which destroy the phase correlations involved in tunneling. The coupling of grain magnetization to phonons, photons, and electrons is shown to have little consequence for weakly-conducting or insulating grains. Domain walls couple to these and also to magnons and impurities or defects; the 3rd order coupling to magnons can have serious effects, but if one uses pure insulators at low temperatures, these can also be ignored

  17. Interatomic forces and bonding mechanisms in MgO clusters

    International Nuclear Information System (INIS)

    Wright, N.F.; Painter, G.S.

    1990-01-01

    We report results from a first-principles local spin density quantum mechanical study of the energetics and elastic properties of a series of magnesium-oxygen clusters of various morphologies. The role of quantum effects, e.g. covalency, in the bonding character of diatomic MgO is determined by comparison of classical and quantum restoring force curves. The dependence of binding properties on geometry and metal to oxygen ratio is determined by comparison of binding energy curves for a series of clusters. Results show that while gross features of the binding curves may be represented by simple interatomic potentials, details require the many body corrections of a full quantum treatment. 6 refs., 5 figs

  18. Metastable self-trapping of positrons in MgO

    Science.gov (United States)

    Monge, M. A.; Pareja, R.; González, R.; Chen, Y.

    1997-01-01

    Low-temperature positron annihilation measurements have been performed on MgO single crystals containing either cation or anion vacancies. The temperature dependence of the S parameter is explained in terms of metastable self-trapped positrons which thermally hop through the crystal lattice. The experimental results are analyzed using a three-state trapping model assuming transitions from both delocalized and self-trapped states to deep trapped states at vacancies. The energy level of the self-trapped state was determined to be (62+/-5) meV above the delocalized state. The activation enthalpy for the hopping process of self-trapped positrons appears to depend on the kind of defect present in the crystals.

  19. Positronium deuteride and hydride in MgO crystals

    International Nuclear Information System (INIS)

    Monge, M.A.; Pareja, R.; Gonzalez, R.; Chen, Y.

    1996-01-01

    Low-temperature positron lifetime and Doppler broadening measurements were made in MgO crystals containing D - or H - ions in order to investigate the temperature dependence of the positron trapping by D - and H - ions and elucidate the possible formation of PsD (PsH) states. Positrons are trapped at D - and H - ions once the oxygen vacancies, which are more effective positron traps, are eliminated by annealing the crystals at high temperatures in a reducing atmosphere. From the temperature dependence of the annihilation parameters the positron trapping coefficients for D - and H - centers were shown to increase with temperature between 100-300 K. The lifetime of the PsD (PsH) state is (650±30) ps and temperature independent. The dissociation rate of the PsD (PsH) state into D (H) and Ps is also temperature independent. No isotopic effect was observed. (author)

  20. Lithium ion implantation effects in MgO(100)

    International Nuclear Information System (INIS)

    Huis, M.A. van; Fedorov, A.V.; Veen, A. van; Labohm, F.; Schut, H.; Mijnarends, P.E.; Kooi, B.J.; Hosson, J.T.M. de

    2001-01-01

    Single crystals of MgO(100) were implanted with 10 16 6 Li ions cm -2 at an energy of 30 keV. After ion implantation the samples were annealed isochronally in air at temperatures up to 1200K. After implantation and after each annealing step, the defect evolution was monitored with optical absorption spectroscopy and depth-sensitive Doppler Broadening positron beam analysis (PBA). A strong increase in the S-parameter is observed in the implantation layer at a depth of approximately 100 nm. The high value of the S-parameter is ascribed to positron annihilation in small lithium precipitates. The results of 2D-ACAR and X-TEM analysis show evidence of the presence of lithium precipitates. The depth distribution of the implanted 6 Li atoms was monitored with neutron depth profiling (NDP). It was observed that detrapping and diffusion of 6 Li starts at an annealing temperature of 1200K. (orig.)

  1. CULTURA ORGANIZACIONAL: UM ESTUDO DE CASO NA EMPRESA MGO

    Directory of Open Access Journals (Sweden)

    Vagner Luís Wentz

    2012-07-01

    Full Text Available O tema cultura tem sido objeto de estudo há muitos anos, e as literaturas existentes apontam uma grande diversidade de conceitos, o que torna as organizações grandes fontes de pesquisa. A MGO, uma multinacional fabricante de produtos agrícolas, convive constantemente com mudanças de seus procedimentos, de suas tarefas do cotidiano e de comportamentos por parte de seus colaboradores, uma relação entre “novatos” e “veteranos” que, em alguns casos, é geradora de conflitos, o que pode vir a prejudicar a imagem da companhia. Diante disso, este estudo tem como objetivo geral analisar a cultura organizacional a partir da percepção das lideranças de uma unidade da empresa MGO situada em Montenegro/RS. Esta pesquisa se classifica, quanto aos procedimentos, como bibliográfica e estudo de caso; quanto aos objetivos, como descritiva; e quanto ao problema, esta pesquisa é classificada como qualitativa. A partir da análise dos dados coletados através de entrevistas semiestruturadas com as lideranças de departamentos diferentes, análise de documentos, observação participante e aplicação do teste para identificação da tipologia de cultura, pode-se identificar a cultura da organização e sugerir algumas melhorias que podem ajudar na harmonia do clima da organização. Palavras-chave: Cultura. Clima. Organização.

  2. Proton tunneling in solids

    Energy Technology Data Exchange (ETDEWEB)

    Kondo, J.

    1998-10-01

    The tunneling rate of the proton and its isotopes between interstitial sites in solids is studied theoretically. The phonons and/or the electrons in the solid have two effects on the tunneling phenomenon. First, they suppress the transfer integral between two neighbouring states. Second, they give rise to a finite lifetime of the proton state. Usually the second effect is large and the tunneling probability per unit time (tunneling rate) can be defined. In some cases, however, a coherent tunneling is expected and actually observed. (author)

  3. Proton tunneling in solids

    International Nuclear Information System (INIS)

    Kondo, J.

    1998-01-01

    The tunneling rate of the proton and its isotopes between interstitial sites in solids is studied theoretically. The phonons and/or the electrons in the solid have two effects on the tunneling phenomenon. First, they suppress the transfer integral between two neighbouring states. Second, they give rise to a finite lifetime of the proton state. Usually the second effect is large and the tunneling probability per unit time (tunneling rate) can be defined. In some cases, however, a coherent tunneling is expected and actually observed. (author)

  4. Fe concentration dependence of tunneling magnetoresistance in magnetic tunnel junctions using group-IV ferromagnetic semiconductor GeFe

    Directory of Open Access Journals (Sweden)

    Kosuke Takiguchi

    2017-10-01

    Full Text Available Group-IV-based ferromagnetic semiconductor Ge1−xFex (GeFe is one of the most promising materials for spin injection/detection in Si and Ge. In this paper, we demonstrate a systematic study of tunneling magnetoresistance (TMR in magnetic tunnel junctions (MTJs composed of Fe/MgO/Ge1−xFex with various Fe concentrations (x = 0.065, 0.105, 0.140, and 0.175. With increasing x, the TMR ratio increases up to 1.5% when x≤ 0.105, and it decreases when x> 0.105. This is the first observation of the TMR ratio over 1% in MTJs containing a group-IV ferromagnetic semiconductor. With increasing x, while the Curie temperature of GeFe increases, the MgO surface becomes rougher, which is thought to be the cause of the upper limit of the TMR ratio. The quality of the MgO layer on GeFe is an important factor for further improvement of TMR in Fe/MgO/GeFe MTJs.

  5. Dynamics of tunneling ionization using Bohmian mechanics

    Science.gov (United States)

    Douguet, Nicolas; Bartschat, Klaus

    2018-01-01

    Recent attoclock experiments and theoretical studies regarding the strong-field ionization of atoms by few-cycle infrared pulses revealed features that have attracted much attention. Here we investigate tunneling ionization and the dynamics of the electron probability using Bohmian mechanics. We consider a one-dimensional problem to illustrate the underlying mechanisms of the ionization process. It is revealed that in the major part of the below-the-barrier ionization regime, in an intense and short infrared pulse, the electron does not tunnel through the entire barrier, but rather starts already from the classically forbidden region. Moreover, we highlight the correspondence between the probability of locating the electron at a particular initial position and its asymptotic momentum. Bohmian mechanics also provides a natural definition of mean tunneling time and exit position, taking account of the time dependence of the barrier. Finally, we find that the electron can exit the barrier with significant kinetic energy, thereby corroborating the results of a recent study [N. Camus et al., Phys. Rev. Lett. 119, 023201 (2017), 10.1103/PhysRevLett.119.023201].

  6. Tunneling time in fluctuating symmetric double wells: Suppression and enhancement of tunneling by spatial symmetry-preserving perturbations

    International Nuclear Information System (INIS)

    Kar, Susmita; Bhattacharyya, S.P.

    2011-01-01

    Graphical abstract: Spatial symmetry-preserving sinusoidal fluctuations of symmetric double-well parameters cause enhancement of tunneling at ω ∼ ω 0 while rectified sinusoidal fluctuations suppress it at ω∼(ω 0 )/2 . Research highlights: → Spatial symmetry-preserving sinusoidal and rectified sinusoidal fluctuations of symmetrical double-well parameters have contrasting effects on tunneling. → Sinusoidal fluctuations at frequency ω ∼ ω 0 causes resonance enhancement of tunneling, ω 0 being the 0 + ↔ 1 + transition frequency. → Under rectified sinusoidal fluctuations at a frequency ω∼1/2 ω 0 suppression or coherent destruction of tunneling is observed due to barrier localization. → The observations are explained by energy-gain analysis and analysis of the time-dependent overlap amplitudes. - Abstract: We investigate how tunneling-time gets affected by spatial symmetry preserving fluctuations in the parameters determining the width, barrier height and well-depth of a symmetric double-well potential. Sinusoidal and rectified sinusoidal fluctuations of the well-parameters are shown to have contrasting effects. Significant enhancement of tunneling is noticed when the well-parameters fluctuate sinusoidally with frequency ω ∼ ω 0 while under rectified sinusoidal perturbation, quenching of tunneling takes place at a fluctuation frequency ω∼1/2 ω 0 ,ω 0 , being the frequency of the lowest transition allowed by the fluctuation induced spatial perturbation of even parity. Time-dependent Hellmann-Feynman theorem is invoked to analyze the energy changes induced by fluctuations. It turns out that the enhancement of tunneling in the sinusoidally fluctuating double well at frequency ω ∼ ω 0 is caused by transition to 1 ± levels under the barrier while in the rectified sinusoidal field at ω∼1/2 ω 0 , a two-photon like process suppresses the tunneling by inducing barrier localization.

  7. Pulsed laser deposition of YBCO films on ISD MgO buffered metal tapes

    CERN Document Server

    Ma, B; Koritala, R E; Fisher, B L; Markowitz, A R; Erck, R A; Baurceanu, R; Dorris, S E; Miller, D J; Balachandran, U

    2003-01-01

    Biaxially textured magnesium oxide (MgO) films deposited by inclined-substrate deposition (ISD) are desirable for rapid production of high-quality template layers for YBCO-coated conductors. High-quality YBCO films were grown on ISD MgO buffered metallic substrates by pulsed laser deposition (PLD). Columnar grains with a roof-tile surface structure were observed in the ISD MgO films. X-ray pole figure analysis revealed that the (002) planes of the ISD MgO films are tilted at an angle from the substrate normal. A small full-width at half maximum (FWHM) of approx 9deg was observed in the phi-scan for ISD MgO films deposited at an inclination angle of 55deg . In-plane texture in the ISD MgO films developed in the first approx 0.5 mu m from the substrate surface, and then stabilized with further increases in film thickness. Yttria-stabilized zirconia and ceria buffer layers were deposited on the ISD MgO grown on metallic substrates prior to the deposition of YBCO by PLD. YBCO films with the c-axis parallel to the...

  8. Synthesis of Doped and non-Doped Nano MgO Ceramic Membranes

    Directory of Open Access Journals (Sweden)

    Shiraz Labib

    2013-12-01

    Full Text Available Doped and non-doped MgO coated thin films on alumina substrates were prepared using a chelating sol-gel method under controlled conditions to prepare nanomaterials with unprecedented properties. The effect of doping of ZnO on thermal, surface and structural properties was investigated using DTA-TG, BET and XRD respectively. Also microstructural studies and coating thickness measurements of MgO thin film were conducted using SEM. An increase in the thermal stability of MgO with increasing ZnO doping percent was observed. The increase of ZnO doping percent showed a marked decrease in the average particle size of MgO powder as a result of the replacement of some Mg2+ by Zn2+ which has similar ionic radius as Mg2+. This decrease in particle size of MgO was also related to the decrease of the degree of MgO crystalinity. The increase of ZnO doping also showed a marked decrease in coating thickness values of the prepared membranes. This decrease was related to the  mechanism of ZnO doping into a MgO crystal lattice.

  9. Influence of different ions doping on the antibacterial properties of MgO nanopowders

    Energy Technology Data Exchange (ETDEWEB)

    Rao, Yuanyuan; Wang, Wei, E-mail: weiwang@hust.edu.cn; Tan, Fatang; Cai, Yuncheng; Lu, Junwen; Qiao, Xueliang

    2013-11-01

    Compared with other inorganic antibacterial agents, magnesium oxide (MgO) nanopowders exhibit a unique antibacterial mechanism and various advantages in applications, having attracted extensive attention. In this study, MgO nanopowders doped with different ions (Li{sup +}, Zn{sup 2+} and Ti{sup 4+}) were synthesized by a sol–gel method, respectively. The structures and morphologies of the as-obtained precursors and nanopowders were characterized and confirmed by X-ray diffraction (XRD), transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS) analysis. The influence of three metal ions doping on the antibacterial properties of MgO nanopowders was also investigated by their bactericidal activity against Escherichia coli (E. coli, ATCC 25922) using the broth microdilution method and the agar method. The results show that Li-doped MgO exhibits better antibacterial activity, Zn-doped and Ti-doped MgO display poorer antibacterial activity than pure MgO. It can be concluded that the influence of different ions doping on the antibacterial properties of MgO mainly lies on oxygen vacancies and basicity of nanopowders.

  10. Fluoride barriers in Nb/Pb Josephson junctions

    Science.gov (United States)

    Asano, H.; Tanabe, K.; Michikami, O.; Igarashi, M.; Beasley, M. R.

    1985-03-01

    Josephson tunnel junctions are fabricated using a new class of artificial barriers, metal fluorides (Al fluoride and Zr fluoride). These fluoride barriers are deposited on the surface of a Nb base electrode, which are previously cleaned using a CF4 cleaning process, and covered by a Pb counterelectrode. The junctions with both Al fluoride and Zr fluoride barriers exhibit good tunneling characteristics and have low specific capacitance. In the case of Zr fluoride, it is observed that reasonable resistances are obtained even at thickness greater than 100 A. This phenomenon might be explained by tunneling via localized states in Zr fluoride.

  11. The effect of impurities on the electronic properties of MgO

    Energy Technology Data Exchange (ETDEWEB)

    Jalili, Seifollah [Department of Chemistry, K.N. Toosi University of Technology, P.O. Box 16315-1618, Tehran (Iran, Islamic Republic of); Computational Physical Sciences Research Laboratory, Department of Nano-Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of)], E-mail: sjalili@nano.ipm.ac.ir; Majidi, Roya [Department of Physics, Shahid Beheshti University, Tehran (Iran, Islamic Republic of)

    2008-10-01

    The effect of impurities on the electronic properties of MgO is investigated using the full potential linearized augmented plane-wave plus local-orbitals method based on density functional theory. The electronic band structures and density of states of MgO in the presence of Ca, Li, and Na impurities were calculated. It is found that increasing the amount of Ca impurity decreases the energy band gap and increases the width of the upper part of the valence band. Some of the considered impurities (Li and Na) change the electronic properties of MgO extensively.

  12. The effect of impurities on the electronic properties of MgO

    International Nuclear Information System (INIS)

    Jalili, Seifollah; Majidi, Roya

    2008-01-01

    The effect of impurities on the electronic properties of MgO is investigated using the full potential linearized augmented plane-wave plus local-orbitals method based on density functional theory. The electronic band structures and density of states of MgO in the presence of Ca, Li, and Na impurities were calculated. It is found that increasing the amount of Ca impurity decreases the energy band gap and increases the width of the upper part of the valence band. Some of the considered impurities (Li and Na) change the electronic properties of MgO extensively

  13. Incipient plasticity and indentation response of MgO surfaces using molecular dynamics

    Science.gov (United States)

    Tran, Anh-Son; Hong, Zheng-Han; Chen, Ming-Yuan; Fang, Te-Hua

    2018-05-01

    The mechanical characteristics of magnesium oxide (MgO) based on nanoindentation are studied using molecular dynamics (MD) simulation. The effects of indenting speed and temperature on the structural deformation and loading-unloading curve are investigated. Results show that the strained surface of the MgO expands to produce a greater relaxation of atoms in the surroundings of the indent. The dislocation propagation and pile-up for MgO occur more significantly with the increasing temperature from 300 K to 973 K. In addition, with increasing temperature, the high strained atoms with a great perturbation appearing at the groove location.

  14. Nb-based superconducting tunnel junctions for X-ray spectroscopy: TaOx and AlOx tunnelbarriers

    International Nuclear Information System (INIS)

    Bruijn, M.P.; Kiewiet, F.; Luiten, O.J.; Michels, F.A.; De Korte, P.A.J.

    1996-01-01

    Results are presented of an optimization study of TaO x -tunnel barriers in superconducting tunnel junctions for X-ray spectroscopy. The properties did not satisfy the critical demands. A comparison is made with first results on AlO x -barriers made with the same processing setup. AFM and TEM were used in studies of interface roughness. (orig.)

  15. The possibility to determine a constant of spin-orbit interaction by scanning tunneling microscopy method

    International Nuclear Information System (INIS)

    Khotkevich, N.V.; Kolesnichenko, Yu.A.; Vovk, N.P.

    2016-01-01

    The electron tunneling from the quasi-two-dimensional (surface) states with the spin-orbit interaction into bulk-mode states is studied in the framework of a model of an infinitely thin inhomogeneous tunnel magnetic barrier. The influence of the scattering of quasi-two-dimensional electrons by a single magnetic defect on the tunnel current is analyzed. Analytic formulas for the conductance of a tunnel point-contact as a function of its distance from the defect are obtained. It is shown that the analysis of the local magnetization density around the defect by means of spin-polarized scanning tunneling microscopy allows finding the constant of spin orbit interaction.

  16. Tunneling times and the Hartman effect revisited

    Energy Technology Data Exchange (ETDEWEB)

    Olkhovsky, Vladislav S. [Ukrainian Academy of Sciences, Kiev (Ukraine). Inst. for Nuclear Research]|[Istituto Nazionale di Fisica Nucleare, Catania (Italy); Recami, Erasmo [Universidade Estadual de Campinas, SP (Brazil). Dept. de Matematica Aplicada]|[Istituto Nazionale di Fisica Nucleare, Milano (Italy); Raciti, Fabio [Catania Univ. (Italy). Dipt. di Fisica; Zaichenko, Aleksandr K. [Ukrainian Academy of Sciences, Kiev (Ukraine)

    1995-05-01

    In a recent review paper we proposed, within conventional quantum mechanics, new definitions for the sub-barrier tunnelling and reflection times. Aims of the present paper are: presenting and analysing the results of various numerical calculations (based on our equations) on the penetration and return times < {tau}Pen >, <{tau}Ret >, during tunneling inside a rectangular potential barrier, for various penetration depths x{sub f}; putting forth and discussing suitable definitions, besides of the mean values, also of the variances (or dispersions) D {sup {tau}}T D {sup {tau}}R for the time durations of transmission and reflection process; mentioning that our definition < {sup {tau}}T > for the average transmission time results to constitute an improvement of the ordinary dwell-time {tau}{sup Dw} formula; commenting upon some recent criticism by C.R. Leavens, on the basis of our new numerical results. We stress that our numerical evaluations confirm that our approach implied and implies, the existence of the Hartman effect: an effect that in these days (due to the theoretical connections between tunneling and evanescent wave propagation) is receiving - at Cologne, Berkeley, Florence and Vienna- indirect, but quite interesting, experimental verifications. At last, we briefly analyze some other definitions of tunnelling times. (author). 24 refs., 5 figs.

  17. Tunneling times and the Hartman effect revisited

    International Nuclear Information System (INIS)

    Olkhovsky, Vladislav S.; Recami, Erasmo; Raciti, Fabio

    1995-05-01

    In a recent review paper we proposed, within conventional quantum mechanics, new definitions for the sub-barrier tunnelling and reflection times. Aims of the present paper are: presenting and analysing the results of various numerical calculations (based on our equations) on the penetration and return times , , during tunneling inside a rectangular potential barrier, for various penetration depths x f ; putting forth and discussing suitable definitions, besides of the mean values, also of the variances (or dispersions) D τ T D τ R for the time durations of transmission and reflection process; mentioning that our definition τ T > for the average transmission time results to constitute an improvement of the ordinary dwell-time τ Dw formula; commenting upon some recent criticism by C.R. Leavens, on the basis of our new numerical results. We stress that our numerical evaluations confirm that our approach implied and implies, the existence of the Hartman effect: an effect that in these days (due to the theoretical connections between tunneling and evanescent wave propagation) is receiving - at Cologne, Berkeley, Florence and Vienna- indirect, but quite interesting, experimental verifications. At last, we briefly analyze some other definitions of tunnelling times. (author). 24 refs., 5 figs

  18. Tunneling spectroscopy in NbN based Josephson junctions

    International Nuclear Information System (INIS)

    Chicault, R.; Villegier, J.C.

    1984-08-01

    Tunneling spectroscopy in high quality NbN-oxide-Pb(In) diodes offers a direct observation of various NbN and Pb phonon frequences as other vibrating modes existing near the tunnel barrier. The large number of peaks attribuated to dips in the transverses and longitudinal acoustic branches of NbN dispersion curves are found to confirm the previous theory developing the contribution of these modes to the strong coupling and high Tc behavior of NbN

  19. New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

    Directory of Open Access Journals (Sweden)

    Jimy Encomendero

    2017-10-01

    Full Text Available For the past two decades, repeatable resonant tunneling transport of electrons in III-nitride double barrier heterostructures has remained elusive at room temperature. In this work we theoretically and experimentally study III-nitride double-barrier resonant tunneling diodes (RTDs, the quantum transport characteristics of which exhibit new features that are unexplainable using existing semiconductor theory. The repeatable and robust resonant transport in our devices enables us to track the origin of these features to the broken inversion symmetry in the uniaxial crystal structure, which generates built-in spontaneous and piezoelectric polarization fields. Resonant tunneling transport enabled by the ground state as well as by the first excited state is demonstrated for the first time over a wide temperature window in planar III-nitride RTDs. An analytical transport model for polar resonant tunneling heterostructures is introduced for the first time, showing a good quantitative agreement with experimental data. From this model we realize that tunneling transport is an extremely sensitive measure of the built-in polarization fields. Since such electric fields play a crucial role in the design of electronic and photonic devices, but are difficult to measure, our work provides a completely new method to accurately determine their magnitude for the entire class of polar heterostructures.

  20. Charge Transport in 2D DNA Tunnel Junction Diodes

    KAUST Repository

    Yoon, Minho

    2017-11-06

    Recently, deoxyribonucleic acid (DNA) is studied for electronics due to its intrinsic benefits such as its natural plenitude, biodegradability, biofunctionality, and low-cost. However, its applications are limited to passive components because of inherent insulating properties. In this report, a metal-insulator-metal tunnel diode with Au/DNA/NiOx junctions is presented. Through the self-aligning process of DNA molecules, a 2D DNA nanosheet is synthesized and used as a tunneling barrier, and semitransparent conducting oxide (NiOx ) is applied as a top electrode for resolving metal penetration issues. This molecular device successfully operates as a nonresonant tunneling diode, and temperature-variable current-voltage analysis proves that Fowler-Nordheim tunneling is a dominant conduction mechanism at the junctions. DNA-based tunneling devices appear to be promising prototypes for nanoelectronics using biomolecules.

  1. Robust spin transfer torque in antiferromagnetic tunnel junctions

    KAUST Repository

    Saidaoui, Hamed Ben Mohamed

    2017-04-18

    We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling electrical manipulation of the Néel antiferromagnetic order parameter is out of plane, ∼n×p, while the torque competing with the antiferromagnetic exchange is in plane, ∼n×(p×n). Here, p and n are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows behavior similar to that in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias, while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than that in antiferromagnetic metallic spin valves due to the tunneling nature of spin transport.

  2. Charge Transport in 2D DNA Tunnel Junction Diodes

    KAUST Repository

    Yoon, Minho; Min, Sung-Wook; Dugasani, Sreekantha Reddy; Lee, Yong Uk; Oh, Min Suk; Anthopoulos, Thomas D.; Park, Sung Ha; Im, Seongil

    2017-01-01

    Recently, deoxyribonucleic acid (DNA) is studied for electronics due to its intrinsic benefits such as its natural plenitude, biodegradability, biofunctionality, and low-cost. However, its applications are limited to passive components because of inherent insulating properties. In this report, a metal-insulator-metal tunnel diode with Au/DNA/NiOx junctions is presented. Through the self-aligning process of DNA molecules, a 2D DNA nanosheet is synthesized and used as a tunneling barrier, and semitransparent conducting oxide (NiOx ) is applied as a top electrode for resolving metal penetration issues. This molecular device successfully operates as a nonresonant tunneling diode, and temperature-variable current-voltage analysis proves that Fowler-Nordheim tunneling is a dominant conduction mechanism at the junctions. DNA-based tunneling devices appear to be promising prototypes for nanoelectronics using biomolecules.

  3. Investigation of (Y,Gd)Ba2Cu3O7-x grown by MOCVD on a simplified IBAD MgO template

    International Nuclear Information System (INIS)

    Stan, L; Holesinger, T G; Maiorov, B; Civale, L; DePaula, R F; Jia, Q X; Chen, Y; Xiong, X; Selvamanickam, V

    2010-01-01

    We have used an ion beam sputtered Y 2 O 3 -Al 2 O 3 (YALO) composite to simplify the architecture of high temperature superconducting (HTS) coated conductors (CCs) based on a IBAD MgO template. By implementing YALO, we have reduced the total non-superconducting layers between the polycrystalline metal substrate and the superconducting film from five (the standard architecture) to four. Well textured (Y,Gd)Ba 2 Cu 3 O 7-x ((Y, Gd)BCO) films have been successfully grown by MOCVD on this simplified template. The microstructural characterization revealed that all layers are continuous and uniform with sharp and clean interfaces. Additionally, the YALO maintained its amorphous nature after the deposition of the superconductive layer, which is a plus in terms of its efficiency as a diffusion barrier. The achievement of a self-field critical current of 230 A cm -1 at 75.5 K is another proof of the effectiveness of YALO as a diffusion barrier and nucleation seed for the MgO. The transport properties under an applied magnetic field of MOCVD grown (Y, Gd)BCO on LMO buffered MgO/YALO/Ni-alloy are comparable with those of (Y, Gd)BCO on a standard architecture, thus demonstrating good compatibility between the simplified template with the MOCVD grown (Y, Gd)BCO. The use of a single composite YALO layer instead of individual layers of Y 2 O 3 and Al 2 O 3 for the large scale fabrication of HTS CCs based on IBAD MgO provides advantages such as potentially reduced cost due to the reduced number of fabrication steps.

  4. Investigation of (Y,Gd)Ba{sub 2}Cu{sub 3}O{sub 7-x} grown by MOCVD on a simplified IBAD MgO template

    Energy Technology Data Exchange (ETDEWEB)

    Stan, L; Holesinger, T G; Maiorov, B; Civale, L; DePaula, R F; Jia, Q X [Los Alamos National Laboratory, PO Box 1663, Los Alamos, NM 87545 (United States); Chen, Y [SuperPower, Incorporated, 450 Duane Avenue, Schenectady, NY 12304 (United States); Xiong, X; Selvamanickam, V [Mechanical Engineering Department, University of Houston, Houston, TX 77204-4006 (United States)

    2010-01-15

    We have used an ion beam sputtered Y{sub 2}O{sub 3}-Al{sub 2}O{sub 3} (YALO) composite to simplify the architecture of high temperature superconducting (HTS) coated conductors (CCs) based on a IBAD MgO template. By implementing YALO, we have reduced the total non-superconducting layers between the polycrystalline metal substrate and the superconducting film from five (the standard architecture) to four. Well textured (Y,Gd)Ba{sub 2}Cu{sub 3}O{sub 7-x} ((Y, Gd)BCO) films have been successfully grown by MOCVD on this simplified template. The microstructural characterization revealed that all layers are continuous and uniform with sharp and clean interfaces. Additionally, the YALO maintained its amorphous nature after the deposition of the superconductive layer, which is a plus in terms of its efficiency as a diffusion barrier. The achievement of a self-field critical current of 230 A cm{sup -1} at 75.5 K is another proof of the effectiveness of YALO as a diffusion barrier and nucleation seed for the MgO. The transport properties under an applied magnetic field of MOCVD grown (Y, Gd)BCO on LMO buffered MgO/YALO/Ni-alloy are comparable with those of (Y, Gd)BCO on a standard architecture, thus demonstrating good compatibility between the simplified template with the MOCVD grown (Y, Gd)BCO. The use of a single composite YALO layer instead of individual layers of Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} for the large scale fabrication of HTS CCs based on IBAD MgO provides advantages such as potentially reduced cost due to the reduced number of fabrication steps.

  5. Charge Islands Through Tunneling

    Science.gov (United States)

    Robinson, Daryl C.

    2002-01-01

    It has been recently reported that the electrical charge in a semiconductive carbon nanotube is not evenly distributed, but rather it is divided into charge "islands." This paper links the aforementioned phenomenon to tunneling and provides further insight into the higher rate of tunneling processes, which makes tunneling devices attractive. This paper also provides a basis for calculating the charge profile over the length of the tube so that nanoscale devices' conductive properties may be fully exploited.

  6. Josephson tunneling and nanosystems

    OpenAIRE

    Ovchinnikov, Yurii; Kresin, Vladimir

    2010-01-01

    Josephson tunneling between nanoclusters is analyzed. The discrete nature of the electronic energy spectra, including their shell ordering, is explicitly taken into account. The treatment considers the two distinct cases of resonant and non-resonant tunneling. It is demonstrated that the current density greatly exceeds the value discussed in the conventional theory. Nanoparticles are shown to be promising building blocks for nanomaterials-based tunneling networks.

  7. Chiral Tunnelling in Twisted Graphene Bilayer

    OpenAIRE

    He, Wen-Yu; Chu, Zhao-Dong; He, Lin

    2013-01-01

    The perfect transmission in graphene monolayer and the perfect reflection in Bernal graphene bilayer for electrons incident in the normal direction of a potential barrier are viewed as two incarnations of the Klein paradox. Here we show a new and unique incarnation of the Klein paradox. Owing to the different chiralities of the quasiparticles involved, the chiral fermions in twisted graphene bilayer shows adjustable probability of chiral tunnelling for normal incidence: they can be changed fr...

  8. Analysis of isothermal sintering of zinc-titanate doped with MgO

    Directory of Open Access Journals (Sweden)

    Obradović N.

    2007-01-01

    Full Text Available The aim of this work was analysis of isothermal sintering of zinc titanate ceramics doped with MgO obtained by mechanical activation. Mixtures of ZnO, TiO2 and MgO (0, 1.25 and 2.5% were mechanically activated 15 minutes in a planetary ball mill. The powders obtained were pressed under different pressures and the results were fitted with a phenomenological compacting equation. Isothermal sintering was performed in air for 120 minutes at four different temperatures. Structural characterization of ZnO-TiO2-MgO system after milling was performed at room temperature using XRPD measurements. DTA measurements showed different activation energies for pure and doped ZnO-TiO2 systems. Thus addition of MgO stabilizes the crystal structure of zinc titanate.

  9. Tuning the properties of an MgO layer for spin-polarized electron transport

    Science.gov (United States)

    Zhao, Chong-Jun; Ding, Lei; Zhao, Zhi-Duo; Zhang, Peng; Cao, Xing-Zhong; Wang, Bao-Yi; Zhang, Jing-Yan; Yu, Guang-Hua

    2014-08-01

    The influence of substrate temperature and annealing on quality/microstructural evolution of MgO, as well as the resultant magnetoresistance (MR) ratio, has been investigated. It has been found that the crystallinity of MgO in the MgO/NiFe/MgO heterostructures gradually improves with increasing substrate temperature. This behavior facilitates the transport of spin-polarized electrons, resulting in a high MR value. After annealing, the formation of vacancy clusters in MgO layers observed through positron annihilation spectroscopy leads to an increase in MR at different levels because of the crystallinity improvement of MgO. However, these vacancy clusters as another important defect can limit further improvement in MR.

  10. Combustion synthesis of MgO nanoparticles using plant extract: Structural characterization and photoluminescence studies

    Science.gov (United States)

    Kumar, Danith; Yadav, L. S. Reddy; Lingaraju, K.; Manjunath, K.; Suresh, D.; Prasad, Daruka; Nagabhushana, H.; Sharma, S. C.; Naika, H. Raja; Chikkahanumantharayappa, Nagaraju, G.

    2015-06-01

    Magnesium oxide nanoparticles (MgO Nps) have been successfully synthesized via solution combustion method using Parthenium plant extract as fuel for the first time. Powder X-ray diffraction (PXRD) pattern reveal that product belongs to the cubic phase (Periclase). FTIR spectrum shows the band at 822 cm-1 indicates the formation of cubic periclase MgO. The optical band gap of MgO Nps estimated from UV -Vis spectrum was found to be in the range 5.40-5.45 eV. SEM images showed that, the product is agglomerated and particle in nature. Photoluminescence (PL) studies shows violet emission at 390 nm, blue emission at 470 nm and green emission at 550 nm. MgO Nps shows good photocatalytic activity for the degradation of methylene blue (MB) dye under UV/Sun light irradiation.

  11. Combustion synthesis of MgO nanoparticles using plant extract: Structural characterization and photoluminescence studies

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Danith; Chikkahanumantharayappa [Dept. of Physics, Vivekananda First grade College, Bangalore - 560055 (India); Yadav, L. S. Reddy; Nagaraju, G., E-mail: nagarajugn@rediffmail.com [Dept of Chemistry, Siddaganga Institute of Technology, Tumkur, Karnataka-572103 (India); Lingaraju, K.; Naika, H. Raja [Dept. of Environmental Science, Tumkur University, Tumkur, Karnataka-572103 (India); Manjunath, K. [Centre for Nano and Material Sciences, Jain University, Jakkasandra, Karnataka-562112 (India); Suresh, D. [Dept. of Chemistry, Tumkur University, Tumkur, Karnataka-572103 (India); Prasad, Daruka [Dept. of Physics, BMS Institute of Technology, Bangalore-560064 (India); Nagabhushana, H. [CNR Rao Center for Advanced Materials, Tumkur University, Tumkur, Karnataka-572103 (India); Sharma, S. C. [Chattisgarh Swami Vivekananda Technological University, Bhilai, Chattisgarh-490009 (India)

    2015-06-24

    Magnesium oxide nanoparticles (MgO Nps) have been successfully synthesized via solution combustion method using Parthenium plant extract as fuel for the first time. Powder X-ray diffraction (PXRD) pattern reveal that product belongs to the cubic phase (Periclase). FTIR spectrum shows the band at 822 cm{sup −1} indicates the formation of cubic periclase MgO. The optical band gap of MgO Nps estimated from UV –Vis spectrum was found to be in the range 5.40–5.45 eV. SEM images showed that, the product is agglomerated and particle in nature. Photoluminescence (PL) studies shows violet emission at 390 nm, blue emission at 470 nm and green emission at 550 nm. MgO Nps shows good photocatalytic activity for the degradation of methylene blue (MB) dye under UV/Sun light irradiation.

  12. Combustion synthesis of MgO nanoparticles using plant extract: Structural characterization and photoluminescence studies

    International Nuclear Information System (INIS)

    Kumar, Danith; Chikkahanumantharayappa; Yadav, L. S. Reddy; Nagaraju, G.; Lingaraju, K.; Naika, H. Raja; Manjunath, K.; Suresh, D.; Prasad, Daruka; Nagabhushana, H.; Sharma, S. C.

    2015-01-01

    Magnesium oxide nanoparticles (MgO Nps) have been successfully synthesized via solution combustion method using Parthenium plant extract as fuel for the first time. Powder X-ray diffraction (PXRD) pattern reveal that product belongs to the cubic phase (Periclase). FTIR spectrum shows the band at 822 cm −1 indicates the formation of cubic periclase MgO. The optical band gap of MgO Nps estimated from UV –Vis spectrum was found to be in the range 5.40–5.45 eV. SEM images showed that, the product is agglomerated and particle in nature. Photoluminescence (PL) studies shows violet emission at 390 nm, blue emission at 470 nm and green emission at 550 nm. MgO Nps shows good photocatalytic activity for the degradation of methylene blue (MB) dye under UV/Sun light irradiation

  13. Effect of Cs and Li atom adsorption on MgO: Secondary emission and work function

    International Nuclear Information System (INIS)

    Bagraev, N.T.; Borisov, V.L.

    1980-01-01

    Adsorption of Cs and Li atoms on the surface of single crystal magnesium oxide films has been investigated using Auger, LEED and contact difference techniques. A decreased work function for a single crystal MgO film grown on the Mo (100) face was observed to be accompanied by an increased secondary electron emission yield shown to be due to a larger escape depth for secondary electrons. LEED showed well ordered layers of adsorbed Cs on the MgO film surface. A model to explain the behaviour of Cs atoms on the film surface is proposed. It is shown that the stability of the Cs coating is not dependent on a prolonged bombardment of the film by incident electron beams of high current density. Depositing and implanting of thin single crystal MgO films with Li were found to result in an increased secondary electron emission yield, with Li adsorption on the MgO film surface being disordered. (orig.)

  14. Communication: Tunnelling splitting in the phosphine molecule

    Science.gov (United States)

    Sousa-Silva, Clara; Tennyson, Jonathan; Yurchenko, Sergey N.

    2016-09-01

    Splitting due to tunnelling via the potential energy barrier has played a significant role in the study of molecular spectra since the early days of spectroscopy. The observation of the ammonia doublet led to attempts to find a phosphine analogous, but these have so far failed due to its considerably higher barrier. Full dimensional, variational nuclear motion calculations are used to predict splittings as a function of excitation energy. Simulated spectra suggest that such splittings should be observable in the near infrared via overtones of the ν2 bending mode starting with 4ν2.

  15. Communication: Tunnelling splitting in the phosphine molecule

    Energy Technology Data Exchange (ETDEWEB)

    Sousa-Silva, Clara; Tennyson, Jonathan; Yurchenko, Sergey N. [Department of Physics and Astronomy, University College London, London WC1E 6BT (United Kingdom)

    2016-09-07

    Splitting due to tunnelling via the potential energy barrier has played a significant role in the study of molecular spectra since the early days of spectroscopy. The observation of the ammonia doublet led to attempts to find a phosphine analogous, but these have so far failed due to its considerably higher barrier. Full dimensional, variational nuclear motion calculations are used to predict splittings as a function of excitation energy. Simulated spectra suggest that such splittings should be observable in the near infrared via overtones of the ν{sub 2} bending mode starting with 4ν{sub 2}.

  16. Microsystem Aeromechanics Wind Tunnel

    Data.gov (United States)

    Federal Laboratory Consortium — The Microsystem Aeromechanics Wind Tunnel advances the study of fundamental flow physics relevant to micro air vehicle (MAV) flight and assesses vehicle performance...

  17. Magnetic tunnel junction thermocouple for thermoelectric power harvesting

    Science.gov (United States)

    Böhnert, T.; Paz, E.; Ferreira, R.; Freitas, P. P.

    2018-05-01

    The thermoelectric power generated in magnetic tunnel junctions (MTJs) is determined as a function of the tunnel barrier thickness for a matched electric circuit. This study suggests that lower resistance area product and higher tunnel magnetoresistance will maximize the thermoelectric power output of the MTJ structures. Further, the thermoelectric behavior of a series of two MTJs, a MTJ thermocouple, is investigated as a function of its magnetic configurations. In an alternating magnetic configurations the thermovoltages cancel each other, while the magnetic contribution remains. A large array of MTJ thermocouples could amplify the magnetic thermovoltage signal significantly.

  18. Ferroelectric tunnel junctions with multi-quantum well structures

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Zhijun; Zhang, Tianjin, E-mail: zhangtj@hubu.edu.cn [Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei University, Wuhan 430062 (China); Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China); Liang, Kun; Qi, Yajun; Wang, Duofa; Wang, Jinzhao; Jiang, Juan [Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China)

    2014-06-02

    Ferroelectric tunnel junctions (FTJs) with multi-quantum well structures are proposed and the tunneling electroresistance (TER) effect is investigated theoretically. Compared with conventional FTJs with monolayer ferroelectric barriers, FTJs with single-well structures provide TER ratio improvements of one order of magnitude, while FTJs with optimized multi-well structures can enhance this improvement by another order of magnitude. It is believed that the increased resonant tunneling strength combined with appropriate asymmetry in these FTJs contributes to the improvement. These studies may help to fabricate FTJs with large TER ratio experimentally and put them into practice.

  19. The theory of coherent resonance tunneling of interacting electrons

    International Nuclear Information System (INIS)

    Elesin, V. F.

    2001-01-01

    Analytical solutions of the Schrödinger equation for a two-barrier structure (resonance-tunnel diode) with open boundary conditions are found within the model of coherent tunneling of interacting electrons. Simple expressions for resonance current are derived which enable one to analyze the current-voltage characteristics, the conditions of emergence of hysteresis, and singularities of the latter depending on the parameters of resonance-tunnel diode. It is demonstrated that the hysteresis is realized if the current exceeds some critical value proportional to the square of resonance level width.

  20. Strengthening and toughening of poly(L-lactide) composites by surface modified MgO whiskers

    Energy Technology Data Exchange (ETDEWEB)

    Wen, Wei [Biomaterial Research Laboratory, Department of Material Science and Engineering, College of Science and Engineering, Jinan University, Guangzhou 510632 (China); Luo, Binghong, E-mail: tluobh@jnu.edu.cn [Biomaterial Research Laboratory, Department of Material Science and Engineering, College of Science and Engineering, Jinan University, Guangzhou 510632 (China); Engineering Research Center of Artificial Organs and Materials, Ministry of Education, Guangzhou 510632 (China); Qin, Xiaopeng; Li, Cairong [Biomaterial Research Laboratory, Department of Material Science and Engineering, College of Science and Engineering, Jinan University, Guangzhou 510632 (China); Liu, Mingxian; Ding, Shan [Biomaterial Research Laboratory, Department of Material Science and Engineering, College of Science and Engineering, Jinan University, Guangzhou 510632 (China); Engineering Research Center of Artificial Organs and Materials, Ministry of Education, Guangzhou 510632 (China); Zhou, Changren, E-mail: tcrz9@jnu.edu.cn [Biomaterial Research Laboratory, Department of Material Science and Engineering, College of Science and Engineering, Jinan University, Guangzhou 510632 (China); Engineering Research Center of Artificial Organs and Materials, Ministry of Education, Guangzhou 510632 (China)

    2015-03-30

    Highlights: • The grafted PLLA chain on the surface of g-MgO whisker was ruled out by FTIR spectroscopy and TG/DTG analyses. • The excellent dispersion of g-MgO whiskers and the strong interfacial adhesion of g-MgO whiskers/PLLA composite were proved by FSEM. • Comparing to MgO particles and MgO whiskers, fibrous-like g-MgO whiskers are the most effective reinforcing and toughening fillers for PLLA. - Abstract: To improve both the strength and toughness of poly(L-lactide) (PLLA), fibrous-like MgO whiskers with diameters of 0.15–1 μm and lengths of 15–110 μm were prepared, and subsequently surface modified with L-lactide to obtain grafted MgO whiskers (g-MgO whiskers). The structures and properties of MgO whiskers and g-MgO whiskers were studied. Then, a series of MgO whiskers/PLLA and g-MgO whiskers/PLLA composites were prepared by solution casting method, for comparison, MgO particles/PLLA composite was prepared too. The resulting composites were evaluated in terms of hydrophilicity, crystallinity, dispersion of whiskers, interfacial adhesion and mechanical performance by means of polarized optical microscopy (POM), contact angle measurement, field emission scanning electron microscope (FSEM), transmission electron microscopy (TEM) and tensile testing. The results revealed that the crystallization rate and hydrophilicity of PLLA were improved by the introduction of MgO whiskers and g-MgO whiskers. The g-MgO whiskers can disperse more uniformly in and show stronger interfacial adhesion with the matrix than MgO whiskers as a result of the surface modification. Due to the bridge effect of the whiskers and the excellent interfacial adhesion between g-MgO whiskers and PLLA, g-MgO whiskers/PLLA composites exhibited remarkably higher strength, modulus and toughness compared to the pristine PLLA, MgO particles/PLLA and MgO whiskers/PLLA composites.

  1. Lithium ion implantation effects in MgO(100)

    Energy Technology Data Exchange (ETDEWEB)

    Huis, M.A. van; Fedorov, A.V.; Veen, A. van; Labohm, F.; Schut, H.; Mijnarends, P.E. [Interfaculty Reactor Inst., Delft Univ. of Technology, Delft (Netherlands); Kooi, B.J.; Hosson, J.T.M. de [Rijksuniversiteit Groningen (Netherlands). Materials Science Centre

    2001-07-01

    Single crystals of MgO(100) were implanted with 10{sup 16} {sup 6}Li ions cm{sup -2} at an energy of 30 keV. After ion implantation the samples were annealed isochronally in air at temperatures up to 1200K. After implantation and after each annealing step, the defect evolution was monitored with optical absorption spectroscopy and depth-sensitive Doppler Broadening positron beam analysis (PBA). A strong increase in the S-parameter is observed in the implantation layer at a depth of approximately 100 nm. The high value of the S-parameter is ascribed to positron annihilation in small lithium precipitates. The results of 2D-ACAR and X-TEM analysis show evidence of the presence of lithium precipitates. The depth distribution of the implanted {sup 6}Li atoms was monitored with neutron depth profiling (NDP). It was observed that detrapping and diffusion of {sup 6}Li starts at an annealing temperature of 1200K. (orig.)

  2. Positron annihilation 2D-ACAR study of semi-coherent Li nanoclusters in MgO(1 0 0) and MgO(1 1 0)

    International Nuclear Information System (INIS)

    Falub, C.V.; Mijnarends, P.E.; Eijt, S.W.H.; Huis, M.A. van; Veen, A. van; Schut, H.

    2002-01-01

    Depth selective positron annihilation two-dimensional angular correlation of annihilation radiation (2D-ACAR) is used to determine the electronic structure of Li nanoclusters formed by implantation of 10 16 cm -2 6 Li ions (with an energy of 30 keV) in MgO(1 0 0) and (1 1 0) crystals, and subsequently annealed at 950 K. The 2D-ACAR spectra of Li-implanted MgO obtained with 4 keV positrons reveal the semi-coherent ordering state of the embedded metallic Li nanoclusters. The results agree with ab initio Korringa-Kohn-Rostoker calculations

  3. Dependence of magnetic anisotropy on MgO sputtering pressure in Co20Fe60B20/MgO stacks

    Science.gov (United States)

    Kaidatzis, A.; Serletis, C.; Niarchos, D.

    2017-10-01

    We investigated the dependence of magnetic anisotropy of Ta/Co20Fe60B20/MgO stacks on the Ar partial pressure during MgO deposition, in the range between 0.5 and 15 mTorr. The stacks are studied before and after annealing at 300°C and it is shown that magnetic anisotropy significantly depends on Ar partial pressure. High pressure results in stacks with very low perpendicular magnetic anisotropy even after annealing, while low pressure results in stacks with perpendicular anisotropy even at the as-deposited state. A monotonic increase of magnetic anisotropy energy is observed as Ar partial pressure is decreased.

  4. Positron annihilation 2D-ACAR study of semi-coherent Li nanoclusters in MgO(1 0 0) and MgO(1 1 0)

    Energy Technology Data Exchange (ETDEWEB)

    Falub, C.V. E-mail: c.falub@iri.tudelft.nl; Mijnarends, P.E.; Eijt, S.W.H.; Huis, M.A. van; Veen, A. van; Schut, H

    2002-05-01

    Depth selective positron annihilation two-dimensional angular correlation of annihilation radiation (2D-ACAR) is used to determine the electronic structure of Li nanoclusters formed by implantation of 10{sup 16} cm{sup -2} {sup 6}Li ions (with an energy of 30 keV) in MgO(1 0 0) and (1 1 0) crystals, and subsequently annealed at 950 K. The 2D-ACAR spectra of Li-implanted MgO obtained with 4 keV positrons reveal the semi-coherent ordering state of the embedded metallic Li nanoclusters. The results agree with ab initio Korringa-Kohn-Rostoker calculations.

  5. Positron annihilation 2D-ACAR study of semi-coherent Li nanoclusters in MgO( 1 0 0 ) and MgO( 1 1 0 )

    Science.gov (United States)

    Falub, C. V.; Mijnarends, P. E.; Eijt, S. W. H.; van Huis, M. A.; van Veen, A.; Schut, H.

    2002-05-01

    Depth selective positron annihilation two-dimensional angular correlation of annihilation radiation (2D-ACAR) is used to determine the electronic structure of Li nanoclusters formed by implantation of 10 16 cm -26Li ions (with an energy of 30 keV) in MgO(1 0 0) and (1 1 0) crystals, and subsequently annealed at 950 K. The 2D-ACAR spectra of Li-implanted MgO obtained with 4 keV positrons reveal the semi-coherent ordering state of the embedded metallic Li nanoclusters. The results agree with ab initio Korringa-Kohn-Rostoker calculations.

  6. Enzyme dynamics and hydrogen tunnelling in a thermophilic alcohol dehydrogenase

    Science.gov (United States)

    Kohen, Amnon; Cannio, Raffaele; Bartolucci, Simonetta; Klinman, Judith P.; Klinman, Judith P.

    1999-06-01

    Biological catalysts (enzymes) speed up reactions by many orders of magnitude using fundamental physical processes to increase chemical reactivity. Hydrogen tunnelling has increasingly been found to contribute to enzyme reactions at room temperature. Tunnelling is the phenomenon by which a particle transfers through a reaction barrier as a result of its wave-like property. In reactions involving small molecules, the relative importance of tunnelling increases as the temperature is reduced. We have now investigated whether hydrogen tunnelling occurs at elevated temperatures in a biological system that functions physiologically under such conditions. Using a thermophilic alcohol dehydrogenase (ADH), we find that hydrogen tunnelling makes a significant contribution at 65°C this is analogous to previous findings with mesophilic ADH at 25°C ( ref. 5). Contrary to predictions for tunnelling through a rigid barrier, the tunnelling with the thermophilic ADH decreases at and below room temperature. These findings provide experimental evidence for a role of thermally excited enzyme fluctuations in modulating enzyme-catalysed bond cleavage.

  7. Size Determination of Y2O3 Crystallites in MgO Composite Using Mie Scattering

    Science.gov (United States)

    2017-11-07

    embedded in a magnesium oxide (MgO) polycrystalline matrix. The calculation takes into account the volume fraction of Y2O3 in MgO, the average...release; distribution is unlimited. v Acknowledgments We gratefully acknowledge the financial support from the US Army Research Laboratory (ARL... principle , and the percent of theoretical density (TD) was calculated based on a TD of the mixture being 3.616 g/cm3. Table 1 Sample preparation

  8. Electron microscopy and positron annihilation study of CdSe nanoclusters embedded in MgO

    NARCIS (Netherlands)

    van Huis, M.A.; van Veen, A.; Schut, H.; Eijt, S.W.H.; Kooi, B.J.; de Hosson, J.T.M.

    CdSe nanoclusters are created in MgO by means of co-implantation of 280 keV, 1 x 10(16) Cd ions cm(-2) and 210 keV, 1 x 10(16) Se ions cm(-2) in single crystals of MgO(001) and subsequent thermal annealing at a temperature of 1300 K, The structural properties and the orientation relationship between

  9. Small numbers from tunneling between brane throats

    International Nuclear Information System (INIS)

    Kaloper, Nemanja

    2003-01-01

    In generic string compactifications with branes, the regions of space in the vicinity of brane horizons, or brane throats, support effective potential barriers, raised by the back-ground gravitational fields. A familiar example is the AdS brane throats in the Randall-Sundrum model. The barriers obstruct the interaction of observers inside different throats, whose communication is effectively described by tunneling through the barriers. Consequently the interactions between different throats are exponentially weak. This provides for a new mechanism for explaining small numbers in Nature. We review the applications to the hierarchy problem where supersymmetry breaking scale is reduced by tunneling, long-lived cold dark matter particles which decay into hot CFT, and consider the implications for holography. We finally discuss the important interplay between the tunneling suppression and our recent conjecture that black holes stuck on a brane in AdS D+1 should be interpreted as duals of quantum-corrected D-dimensional black holes, rather than classical ones, of a CFT coupled to gravity. (author)

  10. Doped Josephson tunneling junction for use in a sensitive IR detector

    International Nuclear Information System (INIS)

    Fletcher, J.C.; Saffren, M.M.

    1975-01-01

    A superconductive tunneling device having a modified tunnel barrier capable of supporting Josephson tunneling current is provided. The tunnel barrier located between a pair of electrodes includes a molecular species which is capable of coupling incident radiation of a spectrum characteristic of the molecular species into the tunnel barrier. The coupled radiation modulates the known Josephson characteristics of the superconducting device. As a result of the present invention, a superconductive tunneling device can be tuned or made sensitive to a particular radiation associated with the dopant molecular species. The present invention is particularly useful in providing an improved infrared detector. The tunnel barrier region can be, for example, an oxide of an electrode or frozen gas. The molecular species can be intermixed with the barrier region such as the frozen gas or deposited as one or more layers of molecules on the barrier region. The deposited molecules of the molecular species are unbonded and capable of responding to a radiation characteristic of the molecules. Semi-conductor material can be utilized as the molecular species to provide an increased selective bandwidth response. Finally, appropriate detector equipment can be utilized to measure the modulation of any of the Josephson characteristics such as critical current, voltage steps, Lambe-Jaklevic peaks and plasma frequency. (auth)

  11. Structural and electrical characterization of ultra-thin SrTiO3 tunnel barriers grown over YBa2Cu3O7 electrodes for the development of high Tc Josephson junctions.

    Science.gov (United States)

    Félix, L Avilés; Sirena, M; Guzmán, L A Agüero; Sutter, J González; Vargas, S Pons; Steren, L B; Bernard, R; Trastoy, J; Villegas, J E; Briático, J; Bergeal, N; Lesueur, J; Faini, G

    2012-12-14

    The transport properties of ultra-thin SrTiO(3) (STO) layers grown over YBa(2)Cu(3)O(7) electrodes were studied by conductive atomic force microscopy at the nano-scale. A very good control of the barrier thickness was achieved during the deposition process. A phenomenological approach was used to obtain critical parameters regarding the structural and electrical properties of the system. The STO layers present an energy barrier of 0.9 eV and an attenuation length of 0.23 nm, indicating very good insulating properties for the development of high-quality Josephson junctions.

  12. Structural and electrical characterization of ultra-thin SrTiO3 tunnel barriers grown over YBa2Cu3O7 electrodes for the development of high Tc Josephson junctions

    International Nuclear Information System (INIS)

    Avilés Félix, L; Sirena, M; Agüero Guzmán, L A; González Sutter, J; Pons Vargas, S; Steren, L B; Bernard, R; Trastoy, J; Villegas, J E; Briático, J; Bergeal, N; Lesueur, J; Faini, G

    2012-01-01

    The transport properties of ultra-thin SrTiO 3 (STO) layers grown over YBa 2 Cu 3 O 7 electrodes were studied by conductive atomic force microscopy at the nano-scale. A very good control of the barrier thickness was achieved during the deposition process. A phenomenological approach was used to obtain critical parameters regarding the structural and electrical properties of the system. The STO layers present an energy barrier of 0.9 eV and an attenuation length of 0.23 nm, indicating very good insulating properties for the development of high-quality Josephson junctions. (paper)

  13. Competitive Heterogeneous Nucleation Between Zr and MgO Particles in Commercial Purity Magnesium

    Science.gov (United States)

    Peng, G. S.; Wang, Y.; Fan, Z.

    2018-06-01

    Grain refining of commercial purity (CP) Mg by Zr addition with intensive melt shearing prior to solidification has been investigated. Experimental results showed that, when intensive melt shearing is imposed prior to solidification, the grain structure of CP Mg exhibits a complex changing pattern with increasing Zr addition. This complex behavior can be attributed to the change of nucleating particles in terms of their crystal structure, size, and number density with varied Zr additions. Naturally occurring MgO particles are found to be {100} faceted with a cubic morphology and 50 to 300 nm in size. Such MgO particles are usually populated densely in a liquid film (usually referred as oxide film) and can be effectively dispersed by intensive melt shearing. It has been confirmed that the dispersed MgO particles can act as nucleating substrates resulting in a significant grain refinement of CP Mg when no other more potent particles are present in the melt. However, Zr particles in the Mg-Zr alloys are more potent than MgO particles for nucleation of Mg due to their same crystal structure and similar lattice parameters with Mg. With the addition of Zr, Zr and the MgO particles co-exist in the melt. Grain refining efficiency is closely related to the competition for heterogeneous nucleation between Zr and the MgO particles. The final solidified microstructure is mainly determined by the interplay of three factors: nucleation potency (measured by lattice misfit), particle size, and particle number density.

  14. Competitive Heterogeneous Nucleation Between Zr and MgO Particles in Commercial Purity Magnesium

    Science.gov (United States)

    Peng, G. S.; Wang, Y.; Fan, Z.

    2018-04-01

    Grain refining of commercial purity (CP) Mg by Zr addition with intensive melt shearing prior to solidification has been investigated. Experimental results showed that, when intensive melt shearing is imposed prior to solidification, the grain structure of CP Mg exhibits a complex changing pattern with increasing Zr addition. This complex behavior can be attributed to the change of nucleating particles in terms of their crystal structure, size, and number density with varied Zr additions. Naturally occurring MgO particles are found to be {100} faceted with a cubic morphology and 50 to 300 nm in size. Such MgO particles are usually populated densely in a liquid film (usually referred as oxide film) and can be effectively dispersed by intensive melt shearing. It has been confirmed that the dispersed MgO particles can act as nucleating substrates resulting in a significant grain refinement of CP Mg when no other more potent particles are present in the melt. However, Zr particles in the Mg-Zr alloys are more potent than MgO particles for nucleation of Mg due to their same crystal structure and similar lattice parameters with Mg. With the addition of Zr, Zr and the MgO particles co-exist in the melt. Grain refining efficiency is closely related to the competition for heterogeneous nucleation between Zr and the MgO particles. The final solidified microstructure is mainly determined by the interplay of three factors: nucleation potency (measured by lattice misfit), particle size, and particle number density.

  15. Stabilization of arsenic and lead by magnesium oxide (MgO) in different seawater concentrations.

    Science.gov (United States)

    Kameda, Kentaro; Hashimoto, Yohey; Ok, Yong Sik

    2018-02-01

    Ongoing sea level rise will have a major impact on mobility and migration of contaminants by changing a number of natural phenomena that alter geochemistry and hydrology of subsurface environment. In-situ immobilization techniques may be a promising remediation strategy for mitigating contaminant mobility induced by sea level rise. This study investigated the reaction mechanisms of magnesium oxide (MgO) with aqueous Pb and As under freshwater and seawater using XAFS spectroscopy. Initial concentrations of Pb and As in freshwater strongly controlled the characteristics of the reaction product of MgO. Our study revealed that i) the removal of aqueous Pb and As by MgO was increased by the elevation of seawater concentration, and ii) the removal of As was attributed primarily to (inner-sphere) surface adsorption on MgO, independent on seawater concentrations, and iii) the retention mechanism of Pb was dependent on seawater concentrations where formations of Pb oxides and adsorption on the MgO surface were predominant in solutions with low and high salinity, respectively. The release of As fixed with MgO significantly increased in seawater compared to freshwater, although the amount of As desorbed accounted for <0.2% of total As. Copyright © 2017 Elsevier Ltd. All rights reserved.

  16. Synthesis and characterization of MgO nanocrystals for biosensing applications

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hongji [Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, School of Chemistry & Chemical Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Mingji, E-mail: limingji@163.com [Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Qiu, Guojun [Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, School of Chemistry & Chemical Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Cuiping; Qu, Changqing; Yang, Baohe [Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China)

    2015-05-25

    Highlights: • MgO nanocrystals were prepared using DC arc plasma jet CVD method. • The growth time does not exceed 10 min in process of the synthesis. • The samples were found to consist of cubic MgO nanobelts and nanosheets. • Nanocrystals contain contacts, rough edges, vacancies, and doping defects. • The samples exhibited excellent electrochemical biosensing properties. - Abstract: MgO nanocrystals were prepared using a simple direct current arc plasma jet chemical vapor deposition method. Magnesium nitrate was used as source material and Mo film was used as a substrate and catalyst. The high-temperature plasma produced ensured rapid synthesis of the MgO nanocrystals. The as-prepared nanocrystals were characterized by field-emission scanning electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction, energy-dispersive spectroscopy, Fourier transform infrared spectrometry, ultraviolet–visible spectrophotometry, and photoluminescence measurements. The as-synthesized samples were found to consist of cubic MgO nanobelts and nanosheets with large surface areas and low coordination oxide ions, and contained numerous contacts, rough edges, vacancies, and doping defects. The nanostructures exhibited excellent electrochemical sensing properties with high-sensing sensitivity toward ascorbic acid. Their high electrocatalytic activity was attributed to the effect of defects and the surface electron transfer ability of the one-dimensional MgO nanobelts.

  17. Absence of traditional magnetoresistivity mechanisms in Sr2FeMoO6 thin films grown on SrTiO3, MgO and NdGaO3 substrates.

    Science.gov (United States)

    Saloaro, M; Majumdar, S; Huhtinen, H; Paturi, P

    2012-09-12

    Magnetoresistive double perovskite Sr(2)FeMoO(6) thin films were grown with two different deposition pressures on SrTiO(3), MgO and NdGaO(3) substrates by pulsed laser deposition and thorough structural, magnetic and magneto-transport characterization was made. According to x-ray diffraction, all the films were phase pure and fully textured. Indication of substrate dependent strain and low angle grain boundaries was found, especially in films on MgO. Both the deposition pressure and the choice of the substrate have a strong influence on the saturation magnetization, M(s), and Curie temperature, T(C). The structural and magnetic data indicate the presence of anti-site disorder (ASD) in the films. The temperature dependence of resistivity showed semiconductive behaviour at temperatures below 100 K and metallic behaviour at higher temperatures. The semiconductive behaviour was found to increase with increasing ASD. In good quality films, up to 12% negative magnetoresistance (MR) was observed and films grown on MgO and NGO substrates also showed low field MR. However, the most significant observation of this study was that the magnetoresistivity of these Sr(2)FeMoO(6) thin films could not be explained with any traditional MR mechanism, but carried the clear signature of superposition of different mechanisms, in particular low angle grain boundary tunnelling and suppression of antiferromagnetically ordered domains under a magnetic field.

  18. Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions.

    Science.gov (United States)

    Soni, Rohit; Petraru, Adrian; Meuffels, Paul; Vavra, Ondrej; Ziegler, Martin; Kim, Seong Keun; Jeong, Doo Seok; Pertsev, Nikolay A; Kohlstedt, Hermann

    2014-11-17

    Among recently discovered ferroelectricity-related phenomena, the tunnelling electroresistance (TER) effect in ferroelectric tunnel junctions (FTJs) has been attracting rapidly increasing attention owing to the emerging possibilities of non-volatile memory, logic and neuromorphic computing applications of these quantum nanostructures. Despite recent advances in experimental and theoretical studies of FTJs, many questions concerning their electrical behaviour still remain open. In particular, the role of ferroelectric/electrode interfaces and the separation of the ferroelectric-driven TER effect from electrochemical ('redox'-based) resistance-switching effects have to be clarified. Here we report the results of a comprehensive study of epitaxial junctions comprising BaTiO(3) barrier, La(0.7)Sr(0.3)MnO(3) bottom electrode and Au or Cu top electrodes. Our results demonstrate a giant electrode effect on the TER of these asymmetric FTJs. The revealed phenomena are attributed to the microscopic interfacial effect of ferroelectric origin, which is supported by the observation of redox-based resistance switching at much higher voltages.

  19. More about tunnelling times and superluminal tunnelling (Hartmann effect)

    International Nuclear Information System (INIS)

    Olkhovsky, V.S.; Recami, E.; Raciti, F.; Zaichenko, A.

    1995-05-01

    Aims of the present paper are: i) presenting and analysing the results of various numerical calculations on the penetration and return times Pen >, Ret >, during tunnelling inside a rectangular potential barrier, for various penetration depths x f ; ii) putting forth and discussing suitable definitions, besides of the mean values, also of the variances (or dispersions) D τT and D τR for the time durations of transmission and reflection processes; iii)mentioning, moreover, that our definition T > for the average transmission time results to constitute an improvement of the ordinary dwell- time formula; iv) commenting, at last, on the basis of the new numerical results, upon some recent criticism by C.R. Leavens. The paper stresses that numerical evaluations confirm that the approach implied, and implies, the existence of the Hartmann effect: an effect that in these days (due to the theoretical connections between tunnelling and evanescent-wave propagation) is receiving - at Cologne, Berkeley, Florence and Vienna - indirect, but quite interesting, experimental verification

  20. Scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Binnig, G.; Rohrer, H.

    1983-01-01

    Based on vacuum tunneling, a novel type of microscope, the scanning tunneling microscope (STM) was developed. It has an unprecedented resolution in real space on an atomic scale. The authors review the important technical features, illustrate the power of the STM for surface topographies and discuss its potential in other areas of science and technology. (Auth.)

  1. Electron tunneling in chemistry

    International Nuclear Information System (INIS)

    Zamaraev, K.I.; Khajrutdinov, R.F.; Zhdanov, V.P.; Molin, Yu.N.

    1985-01-01

    Results of experimental and theoretical investigations are outlined systematically on electron tunnelling in chemical reactions. Mechanism of electron transport to great distances is shown to be characteristic to chemical compounds of a wide range. The function of tunnel reactions is discussed for various fields of chemistry, including radiation chemistry, electrochemistry, chemistry of solids, chemistry of surface and catalysis

  2. Measurement of the absolute tunneling current density in field emission from tungsten(110)

    International Nuclear Information System (INIS)

    Ehrlich, C.D.; Plummer, E.W.

    1978-01-01

    The phenomenon of quantum-mechanical tunneling of an electron through a barrier in the potential energy has been well established in a variety of experiments. The quantity which is usually measured in these experiments is the rate of change of tunneling current and not the absolute current density. This paper reports on a direct measurement of the tunneling current density, which is found to be in good agreement with free-electron theory for W

  3. The two Josephson junction flux qubit with large tunneling amplitude

    International Nuclear Information System (INIS)

    Shnurkov, V.I.; Soroka, A.A.; Mel'nik, S.I.

    2008-01-01

    In this paper we discuss solid-state nanoelectronic realizations of Josephson flux qubits with large tunneling amplitude between the two macroscopic states. The latter can be controlled via the height and form of the potential barrier, which is determined by quantum-state engineering of the flux qubit circuit. The simplest circuit of the flux qubit is a superconducting loop interrupted by a Josephson nanoscale tunnel junction. The tunneling amplitude between two macroscopically different states can be increased substantially by engineering of the qubit circuit if the tunnel junction is replaced by a ScS contact. However, only Josephson tunnel junctions are particularly suitable for large-scale integration circuits and quantum detectors with present-day technology. To overcome this difficulty we consider here a flux qubit with high energy-level separation between the 'ground' and 'excited' states, consisting of a superconducting loop with two low-capacitance Josephson tunnel junctions in series. We demonstrate that for real parameters of resonant superposition between the two macroscopic states the tunneling amplitude can reach values greater than 1 K. Analytical results for the tunneling amplitude obtained within the semiclassical approximation by the instanton technique show good correlation with a numerical solution

  4. Quantum tunneling of Bose-Einstein condensates in optical lattices

    CERN Document Server

    Fan Wen Bin

    2003-01-01

    In quantum tunneling a particle with energy E can pass through a high potential barrier V(>E) due to the wave character of the particle. Bose-Einstein condensates can display very strong tunneling depending on the structure of the trap, which may be a double-well or optical lattices. The employed for the first time to our knowledge the periodic instanton method to investigate tunneling of Bose-Einstein condensates in optical lattices. The results show that there are two kinds of tunneling in this system, Landau-Zener tunneling between extended states of the system and Wannier-Stark tunneling between localized states of the system, and that the latter is 1000 times faster than the former. The also obtain the total decay rate for a wide range of temperature, including classical thermal activation, thermally assisted tunneling and quantum tunneling. The results agree with experimental data in references. Finally, the propose an experimental protocol to observe this new phenomenon in future experiments

  5. Tunnel fire dynamics

    CERN Document Server

    Ingason, Haukur; Lönnermark, Anders

    2015-01-01

    This book covers a wide range of issues in fire safety engineering in tunnels, describes the phenomena related to tunnel fire dynamics, presents state-of-the-art research, and gives detailed solutions to these major issues. Examples for calculations are provided. The aim is to significantly improve the understanding of fire safety engineering in tunnels. Chapters on fuel and ventilation control, combustion products, gas temperatures, heat fluxes, smoke stratification, visibility, tenability, design fire curves, heat release, fire suppression and detection, CFD modeling, and scaling techniques all equip readers to create their own fire safety plans for tunnels. This book should be purchased by any engineer or public official with responsibility for tunnels. It would also be of interest to many fire protection engineers as an application of evolving technical principles of fire safety.

  6. Quasi-relativistic effects in barrier-penetration processes

    International Nuclear Information System (INIS)

    Anchishkin, D.V.

    1991-01-01

    The problem of a particle tunneling through the potential barrier is solved within quasi-relativistic Schroedinger equation. It is shown that the subbarrier relativistic effects give a significant addition to penetration coefficient when some relations between parameters of the barrier and mass of a tunneling particle are satisfied. For instance an account of these effects for penetration of low energy π + -mesons through Coulomb barrier of the 298 U nuclei would give the increasing of penetration coefficient to 30 percent as compared to the nonrelativistic one. Also we give the criteria under which the contribution of the ''under barrier relativism'' to penetration coefficient becomes essential. 3 refs.; 6 figs. (author)

  7. Properties on niobium-based Josephson tunneling elements in junction microstructures

    International Nuclear Information System (INIS)

    Albrecht, G.; Richter, J.; Weber, P.

    1982-01-01

    We describe the fabrication and electrical characteristics of niobium oxide-barrier tunnel junctions with counterelectrodes of lead/lead alloy. Primary attention is directed to the experimental conditions necessary to obtain high-quality tunnel barriers as well as studies on characterizing the atomic structure of the barrier region. In order to study the tunnel barrier homogeneity in the tunneling region the magnetic field dependence of the critical Josephson current is investigated. The I--V characteristics and dependence of the critical Josephson current on temperature are analyzed quantitatively by using a proximity effect model. Finally, we discuss experimental results on the improvement of junction quality by including traces of carbon in the rf argon plasma during the sputter cleaning of niobium base electrodes

  8. 'Al' concentration on spin-dependent resonant tunnelling in InAs/Ga

    Indian Academy of Sciences (India)

    The separation between spin-up and spin-down components, barrier transparency, polarization efficiency and tunnelling lifetime were calculated using the transfer matrix approach. The separation between spin-up and spin-down resonances and tunnelling lifetime were reportedfor the first time in the case of InAs/Ga 1 − y ...

  9. Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets

    Science.gov (United States)

    Min, Byoung-Chul; Motohashi, Kazunari; Lodder, Cock; Jansen, Ron

    2006-10-01

    Magnetic tunnel junctions have become ubiquitous components appearing in magnetic random-access memory, read heads of magnetic disk drives and semiconductor-based spin devices. Inserting a tunnel barrier has been key to achieving spin injection from ferromagnetic (FM) metals into GaAs, but spin injection into Si has remained elusive. We show that Schottky barrier formation leads to a huge conductivity mismatch of the FM tunnel contact and Si, which cannot be solved by the well-known method of adjusting the tunnel barrier thickness. We present a radically different approach for spin-tunnelling resistance control using low-work-function ferromagnets, inserted at the FM/tunnel barrier interface. We demonstrate that in this way the resistance-area (RA) product of FM/Al2O3/Si contacts can be tuned over eight orders of magnitude, while simultaneously maintaining a reasonable tunnel spin polarization. This raises prospects for Si-based spintronics and presents a new category of ferromagnetic materials for spin-tunnel contacts in low-RA-product applications.

  10. Time evolution of tunneling in a thermal medium: Environment-driven excited tunneling

    International Nuclear Information System (INIS)

    Matsumoto, Sh.; Yoshimura, M.

    2004-01-01

    Time evolution of tunneling phenomena proceeding in a thermal medium is studied using a standard model of environmental interaction. A semiclassical probability formula for the particle motion in a metastable state of a one-dimensional system put in a thermal medium is combined with the formula of the quantum penetration factor through a potential barrier to derive the tunneling rate in the medium. The effect of environment, its influence on time evolution in particular, is clarified in our real-time formalism. A nonlinear resonance effect is shown to enhance the tunneling rate at finite times of order 2/η, with η the friction coefficient unless η is too small. In the linear approximation this effect has relevance to the parametric resonance. This effect enhances the possibility of early termination of the cosmological phase transition much prior to the typical Hubble time

  11. Tunneling time, the Hartman effect, and superluminality: A proposed resolution of an old paradox

    International Nuclear Information System (INIS)

    Winful, Herbert G.

    2006-01-01

    The issue of tunneling time is replete with controversy and paradoxes. The controversy stems from the fact that many tunneling time definitions seem to predict superluminal tunneling velocities. One prediction, termed the Hartman effect, states that the tunneling time becomes independent of barrier length for thick enough barriers, ultimately resulting in unbounded tunneling velocities. Experiments done with 'single photons', classical light waves, and microwaves all show this apparent superluminality. The origin of these paradoxical effects has been a mystery for decades. In this article, we review the history of tunneling times starting with the early work of MacColl, Hartman, and Wigner. We discuss some of the tunneling time definitions, with particular emphasis on the phase time (also known as the group delay or Wigner time) and the dwell time. The key experiments are reviewed. We then discuss our recent work, which suggests that the group delay in tunneling is not a transit time as has been assumed for decades. It is, in reality, a lifetime and hence should not be used to assign a speed of barrier traversal. We show how this new understanding along with the concept of energy storage and release resolves all the outstanding tunneling time paradoxes

  12. Improved CO_2 adsorption capacity and cyclic stability of CaO sorbents incorporated with MgO

    International Nuclear Information System (INIS)

    Farah Diana Mohd Daud; Kumaravel Vignesh; Srimala Sreekantan; Abdul Rahman Mohamed

    2016-01-01

    Calcium oxide (CaO) sorbents incorporated with magnesium oxide (MgO) were synthesized using a co-precipitation route. The sorbents were prepared with different MgO concentrations (from 5 wt% to 30 wt%). The as-prepared sorbents were characterized using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDX) and BET surface area analysis techniques. The sintering effect of CaO sorbents was decreased after the incorporation of MgO. The sorbents with 5 wt% and 10 wt% of MgO retained their CO_2 adsorption capacity over multiple cycles. Most importantly, CaO with 10 wt% MgO showed constant CO_2 adsorption capacity over 30 carbonation cycles. The results revealed that CaO with 10 wt% MgO is sufficient to produce sorbents with high surface area, good structural stability and enhanced CO_2 adsorption capacity. (authors)

  13. Low-temperature atomic layer deposition of MgO thin films on Si

    International Nuclear Information System (INIS)

    Vangelista, S; Mantovan, R; Lamperti, A; Tallarida, G; Kutrzeba-Kotowska, B; Spiga, S; Fanciulli, M

    2013-01-01

    Magnesium oxide (MgO) films have been grown by atomic layer deposition in the wide deposition temperature window of 80–350 °C by using bis(cyclopentadienyl)magnesium and H 2 O precursors. MgO thin films are deposited on both HF-last Si(1 0 0) and SiO 2 /Si substrates at a constant growth rate of ∼0.12 nm cycle −1 . The structural, morphological and chemical properties of the synthesized MgO thin films are investigated by x-ray reflectivity, grazing incidence x-ray diffraction, time-of-flight secondary ion mass spectrometry and atomic force microscopy measurements. MgO layers are characterized by sharp interface with the substrate and limited surface roughness, besides good chemical uniformity and polycrystalline structure for thickness above 7 nm. C–V measurements performed on Al/MgO/Si MOS capacitors, with MgO in the 4.6–11 nm thickness range, allow determining a dielectric constant (κ) ∼ 11. Co layers are grown by chemical vapour deposition in direct contact with MgO without vacuum-break (base pressure 10 −5 –10 −6  Pa). The as-grown Co/MgO stacks show sharp interfaces and no elements interdiffusion among layers. C–V and I–V measurements have been conducted on Co/MgO/Si MOS capacitors. The dielectric properties of MgO are not influenced by the further process of Co deposition. (paper)

  14. Transmission coefficient, resonant tunneling lifetime and traversal time in multibarrier semiconductor heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Nanda, Jyotirmayee [Department of Physics, National Institute of Technology, Rourkela, 769008 (India)]. E-mail: jnanda_b9@rediffmail.com; Mahapatra, P.K. [Department of Physics and Technophysics, Vidyasagar University, Midnapore, 721102 (India)]. E-mail: pkmahapatra@vidyasagar.ac.in; Roy, C.L. [Department of Physics and Meterology, Indian Institute of Technology, Kharagpur, 721302 (India)

    2006-09-01

    A computational model based on non-relativistic approach is proposed for the determination of transmission coefficient, resonant tunneling energies, group velocity, resonant tunneling lifetime and traversal time in multibarrier systems (GaAs/Al {sub y} Ga{sub 1-} {sub y} As) for the entire energy range {epsilon}V {sub 0}, V {sub 0}, being the potential barrier height. The resonant energy states were found to group into allowed tunneling bands separated by forbidden gaps. The tunneling lifetime and the traversal time are found to have minimum values at the middle of each allowed band. Further, It is observed that the electrons with energies in the higher tunneling band could tunnel out faster than those with energies in the lower band. Moreover, an additional resonant peak in resonant energy spectrum indicated the presence of a surface state where resonant tunneling occurs.

  15. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    International Nuclear Information System (INIS)

    Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth

    2010-01-01

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In 0.33 Ga 0.67 N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm 2 at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm 2 . These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  16. Characterisation of the mgo operon in Pseudomonas syringae pv. syringae UMAF0158 that is required for mangotoxin production

    Science.gov (United States)

    2012-01-01

    Background Mangotoxin is an antimetabolite toxin that is produced by strains of Pseudomonas syringae pv. syringae; mangotoxin-producing strains are primarily isolated from mango tissues with symptoms of bacterial apical necrosis. The toxin is an oligopeptide that inhibits ornithine N-acetyl transferase (OAT), a key enzyme in the biosynthetic pathway of the essential amino acids ornithine and arginine. The involvement of a putative nonribosomal peptide synthetase gene (mgoA) in mangotoxin production and virulence has been reported. Results In the present study, we performed a RT-PCR analysis, insertional inactivation mutagenesis, a promoter expression analysis and terminator localisation to study the gene cluster containing the mgoA gene. Additionally, we evaluated the importance of mgoC, mgoA and mgoD in mangotoxin production. A sequence analysis revealed an operon-like organisation. A promoter sequence was located upstream of the mgoB gene and was found to drive lacZ transcription. Two terminators were located downstream of the mgoD gene. RT-PCR experiments indicated that the four genes (mgoBCAD) constitute a transcriptional unit. This operon is similar in genetic organisation to those in the three other P. syringae pathovars for which complete genomes are available (P. syringae pv. syringae B728a, P. syringae pv. tomato DC3000 and P. syringae pv. phaseolicola 1448A). Interestingly, none of these three reference strains is capable of producing mangotoxin. Additionally, extract complementation resulted in a recovery of mangotoxin production when the defective mutant was complemented with wild-type extracts. Conclusions The results of this study confirm that mgoB, mgoC, mgoA and mgoD function as a transcriptional unit and operon. While this operon is composed of four genes, only the last three are directly involved in mangotoxin production. PMID:22251433

  17. Tunneling current between graphene layers

    OpenAIRE

    Poklonski, Nikolai A.; Siahlo, Andrei I.; Vyrko, Sergey A.; Popov, Andrey M.; Lozovik, Yurii E.

    2013-01-01

    The physical model that allows to calculate the values of the tunneling current be-tween graphene layers is proposed. The tunneling current according to the pro-posed model is proportional to the area of tunneling transition. The calculated value of tunneling conductivity is in qualitative agreement with experimental data.

  18. The role of sacrificial fugitives in thermoplastic extrusion feedstocks onproperties of MgO supports for oxygen transport membranes

    DEFF Research Database (Denmark)

    Kothanda Ramachandran, Dhavanesan; Kwok, Kawai; Søgaard, Martin

    2015-01-01

    2014AbstractThree different compositions of MgO compounds were investigated for use in oxygen transport membranes. Porous MgO supports were extruded using different kind (size, morphology and chemistry) of pore formers: A flaky graphite, a spherical graphite and ideal spheres of PMMA. The influence...... of the pore former on microstructure, gas permeation and the mechanical properties for various sintering temperatures were investigated.The gas permeation behavior of the MgO supports was highly dependent on pore neck size and total open porosity. MgO substrate, with 20% spherical graphite as a pore former...

  19. Influences of arc current on composition and properties of MgO thin films prepared by cathodic vacuum arc deposition

    International Nuclear Information System (INIS)

    Zhu Daoyun; Zheng Changxi; Wang Mingdong; Liu Yi; Chen Dihu; He Zhenhui; Wen Lishi; Cheung, W.Y.

    2010-01-01

    MgO thin films with high optical transmittances (more than 90%) were prepared by cathodic vacuum arc deposition technique. With the increase of arc current from 40 to 80 A, the deposition pressure decreases and the film thickness increases; the atomic ratio of Mg/O in MgO thin films (obtained by RBS) increases from 0.97 to 1.17, giving that deposited at 50 A most close to the stoichiometric composition of the bulk MgO; the grains of MgO thin films grow gradually as shown in SEM images. XRD patterns show that MgO (1 1 0) orientation is predominant for films prepared at the arc currents ranged from 50 to 70 A. The MgO (1 0 0) orientation is much enhanced and comparable to that of MgO (1 1 0) for films prepared at the arc current of 80 A. The secondary electron emission coefficient of MgO thin film increases with arc current ranged from 50 to 70 A.

  20. Vacuum phonon tunneling.

    Science.gov (United States)

    Altfeder, Igor; Voevodin, Andrey A; Roy, Ajit K

    2010-10-15

    Field-induced phonon tunneling, a previously unknown mechanism of interfacial thermal transport, has been revealed by ultrahigh vacuum inelastic scanning tunneling microscopy (STM). Using thermally broadened Fermi-Dirac distribution in the STM tip as in situ atomic-scale thermometer we found that thermal vibrations of the last tip atom are effectively transmitted to sample surface despite few angstroms wide vacuum gap. We show that phonon tunneling is driven by interfacial electric field and thermally vibrating image charges, and its rate is enhanced by surface electron-phonon interaction.

  1. Chiral tunneling in gated inversion symmetric Weyl semimetal

    Science.gov (United States)

    Bai, Chunxu; Yang, Yanling; Chang, Kai

    2016-01-01

    Based on the chirality-resolved transfer-matrix method, we evaluate the chiral transport tunneling through Weyl semimetal multi-barrier structures created by periodic gates. It is shown that, in sharp contrast to the cases of three dimensional normal semimetals, the tunneling coefficient as a function of incident angle shows a strong anisotropic behavior. Importantly, the tunneling coefficients display an interesting periodic oscillation as a function of the crystallographic angle of the structures. With the increasement of the barriers, the tunneling current shows a Fabry-Perot type interferences. For superlattice structures, the fancy miniband effect has been revealed. Our results show that the angular dependence of the first bandgap can be reduced into a Lorentz formula. The disorder suppresses the oscillation of the tunneling conductance, but would not affect its average amplitude. This is in sharp contrast to that in multi-barrier conventional semiconductor structures. Moreover, numerical results for the dependence of the angularly averaged conductance on the incident energy and the structure parameters are presented and contrasted with those in two dimensional relativistic materials. Our work suggests that the gated Weyl semimetal opens a possible new route to access to new type nanoelectronic device. PMID:26888491

  2. Tunneling times in bianisotropic, dispersive and absorptive metamaterials

    International Nuclear Information System (INIS)

    Radosavljević, Sanja; Radovanović, Jelena; Milanović, Vitomir

    2016-01-01

    Tunneling times in complex bianisotropic materials have been examined in detail, with absorption and dispersion taken into account. Tunneling is characterized by the dwell and the phase tunneling time. In this paper, we have developed a theoretical model and derived the appropriate expressions for each of these quantities, as well as a relationship between them and the corresponding expression for the energy density. The model has been verified through numerical calculations based on experimental data. We have distinguished cases in which the phases of transmitted and incident wave match each other, and showed that for small angles of incidence, the time that the wave spends inside the barrier can be approximated as a linear function of the barrier width. The Hartman effect has been detected, although for very thick layers of metamaterial. - Highlights: • We analyze the tunneling times in bianisotropic, dispersive and absorptive metamaterials. • Conditions of zero phase tunneling time are identified for a range of frequencies of interest. • The Hartman effect has been detected for very thick barriers of metamaterial.

  3. Tunneling times in bianisotropic, dispersive and absorptive metamaterials

    Energy Technology Data Exchange (ETDEWEB)

    Radosavljević, Sanja [School of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73, 11120 Belgrade (Serbia); Photonics Research Group, Ghent University – imec, Sint-Pietersnieuwstraat 41, 9000 Ghent (Belgium); Radovanović, Jelena, E-mail: radovanovic@etf.bg.ac.rs [School of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73, 11120 Belgrade (Serbia); Milanović, Vitomir [School of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73, 11120 Belgrade (Serbia)

    2016-12-09

    Tunneling times in complex bianisotropic materials have been examined in detail, with absorption and dispersion taken into account. Tunneling is characterized by the dwell and the phase tunneling time. In this paper, we have developed a theoretical model and derived the appropriate expressions for each of these quantities, as well as a relationship between them and the corresponding expression for the energy density. The model has been verified through numerical calculations based on experimental data. We have distinguished cases in which the phases of transmitted and incident wave match each other, and showed that for small angles of incidence, the time that the wave spends inside the barrier can be approximated as a linear function of the barrier width. The Hartman effect has been detected, although for very thick layers of metamaterial. - Highlights: • We analyze the tunneling times in bianisotropic, dispersive and absorptive metamaterials. • Conditions of zero phase tunneling time are identified for a range of frequencies of interest. • The Hartman effect has been detected for very thick barriers of metamaterial.

  4. Tunnelling anomalous and planar Hall effects (Conference Presentation)

    Science.gov (United States)

    Matos-Abiague, Alex; Scharf, Benedikt; Han, Jong E.; Hankiewicz, Ewelina M.; Zutic, Igor

    2016-10-01

    We theoretically show how the interplay between spin-orbit coupling (SOC) and magnetism can result in a finite tunneling Hall conductance, transverse to the applied bias. For two-dimensional tunnel junctions with a ferromagnetic lead and magnetization perpendicular to the current flow, the detected anomalous Hall voltage can be used to extract information not only about the spin polarization but also about the strength of the interfacial SOC. In contrast, a tunneling current across a ferromagnetic barrier on the surface of a three-dimensional topological insulator (TI) can induce a planar Hall response even when the magnetization is oriented along the current flow[1]. The tunneling nature of the states contributing to the planar Hall conductance can be switched from the ordinary to the Klein regimes by the electrostatic control of the barrier strength. This allows for an enhancement of the transverse response and a giant Hall angle, with the tunneling planar Hall conductance exceeding the longitudinal component. Despite the simplicity of a single ferromagnetic region, the TI/ferromagnet system exhibits a variety of functionalities. In addition to a spin-valve operation for magnetic sensing and storing information, positive, negative, and negative differential conductances can be tuned by properly adjusting the barrier potential and/or varying the magnetization direction. Such different resistive behaviors in the same system are attractive for potential applications in reconfigurable spintronic devices. [1] B. Scharf, A. Matos-Abiague, J. E. Han, E. M. Hankiewicz, and I. Zutic, arXiv:1601.01009 (2016).

  5. A novel approach for arsenic adsorbents regeneration using MgO.

    Science.gov (United States)

    Tresintsi, Sofia; Simeonidis, Konstantinos; Katsikini, Maria; Paloura, Eleni C; Bantsis, Georgios; Mitrakas, Manassis

    2014-01-30

    An integrated procedure for the regeneration of iron oxy-hydroxide arsenic adsorbents by granulated MgO is proposed in this study. A continuous recirculation configuration, with a NaOH solution flowing sequentially through the saturated adsorbent (leaching step) and the MgO (adsorption step) column beds, was optimized by utilizing the high arsenic adsorption efficiency of MgO at strong alkaline environments. Experimental results indicated that the total amount of leached arsenic was captured by MgO whereas the regenerated iron oxy-hydroxide recovered around 80% of its removal capacity upon reuse. The improved adsorption capacity of MgO for As(V), which is maximized at pH 10, is explained by the intermediate hydration to Mg(OH)2 and the following As(V) oxy-anions adsorption on its surface through the formation of monodentate inner sphere complexes, as it is deduced from the AsK-edge X-ray absorption fine structure (EXAFS) analysis. In addition to the economical-benefits, corresponding tests proved that the solid wastes of this process, namely spent MgO/Mg(OH)2, can be environmentally safely disposed as stable additives in cement products, while the alkaline solution is completely detoxified and can be recycled to the regeneration task. Copyright © 2013 Elsevier B.V. All rights reserved.

  6. Silicothermic reduction of MgO using diode laser: Experimental and kinetic study

    Directory of Open Access Journals (Sweden)

    M.S. Mahmoud

    2017-12-01

    Full Text Available As a step toward realizing magnesium civilization, which needs a sustainable Mg production process, the reduction of MgO to Mg has been investigated. Direct diode laser (DDL produces high power and continuous beam in tiny spots. The laser with energy density up to 83*105 W/cm2 is focused on MgO/Si target inside the vacuum chamber, creating the high temperature zone, which stimulates the Mg production reaction. The vapor is collected on the copper plate; and then, analyzed chemically in terms of Mg production efficiency. The largest reduction and energy efficiencies in Ar atmosphere were 41% and 15.3 mg kJ−1, while in the vacuum, 13.5% and 15.8 mg kJ−1 were attainable. The reactions of MgO and Si have been investigated. Calculations revealed that the MgO reduction with Si proceeds as heterogeneous reaction. The rate of reaction of Si with MgO is faster than the rate of MgO evaporation and Mg vapor deposition.

  7. Reduction of CaO and MgO Slag Components by Al in Liquid Fe

    Science.gov (United States)

    Mu, Haoyuan; Zhang, Tongsheng; Fruehan, Richard J.; Webler, Bryan A.

    2018-05-01

    This study documents laboratory-scale observations of reactions between Fe-Al alloys (0.1 to 2 wt pct Al) with slags and refractories. Al in steels is known to reduce oxide components in slag and refractory. With continued development of Al-containing Advanced High-Strength Steel (AHSS) grade, the effects of higher Al must be examined because reduction of components such as CaO and MgO could lead to uncontrolled modification of non-metallic inclusions. This may lead to castability or in-service performance problems. In this work, Fe-Al alloys and CaO-MgO-Al2O3 slags were melted in an MgO crucible and samples were taken at various times up to 60 minutes. Inclusions from these samples were characterized using an automated scanning electron microscope equipped with energy dispersive x-ray analysis (SEM/EDS). Initially Al2O3 inclusions were modified to MgAl2O4, then MgO, then MgO + CaO-Al2O3-MgO liquid inclusions. Modification of the inclusions was faster at higher Al levels. Very little Ca modification was observed except at 2 wt pct Al level. The thermodynamic feasibility of inclusion modification and some of the mass transfer considerations that may have led to the differences in the Mg and Ca modification behavior were discussed.

  8. Synthesis and characterization of isolated iron oxide nanoparticle dispersed in MgO matrix

    International Nuclear Information System (INIS)

    Choa, Y.-H.; Yang, J.-K.; Yang, W.-J.; Auh, K.-H.

    2003-01-01

    γ-Fe 2 O 3 /MgO nanocomposite powders, which can be used for biomedical, magnetic and the catalytic applications, were fabricated by means of spray pyrolysis using an ultrasonic atomizer. The liquid source was prepared using Fe and Mg nitrates dissolved in pure water. The liquid was atomized using an ultrasonic atomizer and carried into a pre-heated chamber (500-800 deg. C) by air carrier gas. The mist was then decomposed into γ-Fe 2 O 3 and MgO nanopowders. The entire operation was performed at 1 atm. The γ-Fe 2 O 3 /MgO powder was found to be perfectly crystallized at 800 deg. C. The particle size of γ-Fe 2 O 3 /MgO nanocomposite powders prepared at 800 deg. C was about 10 nm for γ-Fe 2 O 3 and MgO, which were calculated by XRD using Scherrer's formula and measured by TEM observation. The samples indicate the presence of superparamagnetic properties and a blocking temperature (T B ) of 125 K

  9. Resonant tunneling across a ferroelectric domain wall

    Science.gov (United States)

    Li, M.; Tao, L. L.; Velev, J. P.; Tsymbal, E. Y.

    2018-04-01

    Motivated by recent experimental observations, we explore electron transport properties of a ferroelectric tunnel junction (FTJ) with an embedded head-to-head ferroelectric domain wall, using first-principles density-functional theory calculations. We consider a FTJ with L a0.5S r0.5Mn O3 electrodes separated by a BaTi O3 barrier layer and show that an in-plane charged domain wall in the ferroelectric BaTi O3 can be induced by polar interfaces. The resulting V -shaped electrostatic potential profile across the BaTi O3 layer creates a quantum well and leads to the formation of a two-dimensional electron gas, which stabilizes the domain wall. The confined electronic states in the barrier are responsible for resonant tunneling as is evident from our quantum-transport calculations. We find that the resonant tunneling is an orbital selective process, which leads to sharp spikes in the momentum- and energy-resolved transmission spectra. Our results indicate that domain walls embedded in FTJs can be used to control the electron transport.

  10. Unusual photoelectric behaviors of Mo-doped TiO2 multilayer thin films prepared by RF magnetron co-sputtering: effect of barrier tunneling on internal charge transfer

    Science.gov (United States)

    Yan, B. X.; Luo, S. Y.; Mao, X. G.; Shen, J.; Zhou, Q. F.

    2013-01-01

    Mo-doped TiO2 multilayer thin films were prepared by RF magnetron co-sputtering. Microstructures, crystallite parameters and the absorption band were investigated with atomic force microscopy, X-ray diffraction and ultraviolet-visible spectroscopy. Internal carrier transport characteristics and the photoelectric property of different layer-assemble modes were examined on an electrochemical workstation under visible light. The result indicates that the double-layer structure with an undoped surface layer demonstrated a red-shifted absorption edge and a much stronger photocurrent compared to the uniformly doped sample, signifying that the electric field implanted at the interface between particles in different layers accelerated internal charge transfer effectively. However, a heavily doped layer implanted at the bottom of the three-layer film merely brought about negative effects on the photoelectric property, mainly because of the Schottky junction existing above the substrate. Nevertheless, this obstacle was successfully eliminated by raising the Mo concentration to 1020 cm-3, where the thickness of the depletion layer fell into the order of angstroms and the tunneling coefficient manifested a dramatic increase. Under this circumstance, the Schottky junction disappeared and the strongest photocurrent was observed in the three-layer film.

  11. Valley polarization due to trigonal warping on tunneling electrons in graphene

    International Nuclear Information System (INIS)

    Pereira Jr, J M; Peeters, F M; Costa Filho, R N; Farias, G A

    2009-01-01

    The effect of trigonal warping on the transmission of electrons tunneling through potential barriers in graphene is investigated. We present calculations of the transmission coefficient for single and double barriers as a function of energy, incidence angle and barrier heights. The results show remarkable valley-dependent directional effects for barriers oriented parallel to the armchair or parallel to the zigzag direction. These results indicate that electrostatic gates can be used as valley filters in graphene-based devices.

  12. The overshoot problem in inflation after tunneling

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, Koushik; Vaudrevange, Pascal M.; Westphal, Alexander

    2011-09-15

    We show the absence of the usual parametrically large overshoot problem of small-field inflation if initiated by a Coleman-De Luccia (CDL) tunneling transition from an earlier vacuum in the limit of small inflationary scale compared to the tunneling scale. For low-power monomial exit potentials V({phi}){proportional_to} {phi}{sup n}; n<4, we derive an expression for the amount of overshoot. This is bounded from above by the width of the steep barrier traversed after emerging from tunneling and before reaching a slow-roll region of the potential. For n{>=}4 we show that overshooting is entirely absent. We extend this result through binomials to a general potential written as a series expansion, and to the case of arbitrary finite initial speed of the inflaton. This places the phase space of initial conditions for small-field and large-field inflation on the same footing in a landscape of string theory vacua populated via CDL tunneling. (orig.)

  13. Tunneling magnetoresistance and electroresistance in Fe/PbTiO3/Fe multiferroic tunnel junctions

    International Nuclear Information System (INIS)

    Dai, Jian-Qing

    2016-01-01

    We perform first-principles electronic structure and spin-dependent transport calculations for a Fe/PbTiO 3 /Fe multiferroic tunnel junction with asymmetric TiO 2 - and PbO-terminated interfaces. We demonstrate that the interfacial electronic reconstruction driven by the in situ screening of ferroelectric polarization, in conjunction with the intricate complex band structure of barrier, play a decisive role in controlling the spin-dependent tunneling. Reversal of ferroelectric polarization results in a transition from insulating to half-metal-like conducting state for the interfacial Pb 6p z orbitals, which acts as an atomic-scale spin-valve by releasing the tunneling current in antiparallel magnetization configuration as the ferroelectric polarization pointing to the PbO-terminated interface. This effect produces large change in tunneling conductance. Our results open an attractive avenue in designing multiferroic tunnel junctions with excellent performance by exploiting the interfacial electronic reconstruction originated from the in situ screening of ferroelectric polarization.

  14. Tunneling magnetoresistance and electroresistance in Fe/PbTiO{sub 3}/Fe multiferroic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Dai, Jian-Qing, E-mail: djqkust@sina.com [School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China)

    2016-08-21

    We perform first-principles electronic structure and spin-dependent transport calculations for a Fe/PbTiO{sub 3}/Fe multiferroic tunnel junction with asymmetric TiO{sub 2}- and PbO-terminated interfaces. We demonstrate that the interfacial electronic reconstruction driven by the in situ screening of ferroelectric polarization, in conjunction with the intricate complex band structure of barrier, play a decisive role in controlling the spin-dependent tunneling. Reversal of ferroelectric polarization results in a transition from insulating to half-metal-like conducting state for the interfacial Pb 6p{sub z} orbitals, which acts as an atomic-scale spin-valve by releasing the tunneling current in antiparallel magnetization configuration as the ferroelectric polarization pointing to the PbO-terminated interface. This effect produces large change in tunneling conductance. Our results open an attractive avenue in designing multiferroic tunnel junctions with excellent performance by exploiting the interfacial electronic reconstruction originated from the in situ screening of ferroelectric polarization.

  15. Wind Tunnel Testing Facilities

    Data.gov (United States)

    Federal Laboratory Consortium — NASA Ames Research Center is pleased to offer the services of our premier wind tunnel facilities that have a broad range of proven testing capabilities to customers...

  16. INCAS TRISONIC WIND TUNNEL

    Directory of Open Access Journals (Sweden)

    Florin MUNTEANU

    2009-09-01

    Full Text Available The 1.2 m x 1.2 m Trisonic Blowdown Wind Tunnel is the largest of the experimental facilities at the National Institute for Aerospace Research - I.N.C.A.S. "Elie Carafoli", Bucharest, Romania. The tunnel has been designed by the Canadian company DSMA (now AIOLOS and since its commissioning in 1978 has performed high speed aerodynamic tests for more than 120 projects of aircraft, missiles and other objects among which the twin jet fighter IAR-93, the jet trainer IAR-99, the MIG-21 Lancer, the Polish jet fighter YRYDA and others. In the last years the wind tunnel has been used mostly for experimental research in European projects such as UFAST. The high flow quality parameters and the wide range of testing capabilities ensure the competitivity of the tunnel at an international level.

  17. The ISI Tunnel

    Science.gov (United States)

    1993-10-01

    DP /etc/tunnelvisa p zephyr dark -star TCP /etc/tunnelvisa p zephyr dak’star ICMP /etc/tunnelvisa p zephyr quark MDP /etc/tunnelvisa p zephyr quark ...drax-net-yp 128.9.32.2 1 route add quark -net-yp 128.9.32.3 1 route add vlsi-net-yp 128.9.32.4 1 route add darkstar-net-yp 128.9.32.3 1 route add rocky...TCP /etc/tunnel-visa p zephyr quark ICMP /etc/tunnel-visa p zephyr drax tTI)P /etc/tunnel-visa p zephyr drax TCP /etc/tunnel_visa p zephyr drax ICMP

  18. Wind Tunnel Facility

    Data.gov (United States)

    Federal Laboratory Consortium — This ARDEC facility consists of subsonic, transonic, and supersonic wind tunnels to acquire aerodynamic data. Full-scale and sub-scale models of munitions are fitted...

  19. Water Tunnel Facility

    Data.gov (United States)

    Federal Laboratory Consortium — NETL’s High-Pressure Water Tunnel Facility in Pittsburgh, PA, re-creates the conditions found 3,000 meters beneath the ocean’s surface, allowing scientists to study...

  20. Tunneling from super- to normal-deformed minima in nuclei

    International Nuclear Information System (INIS)

    Khoo, T. L.

    1998-01-01

    An excited minimum, or false vacuum, gives rise to a highly elongated superdeformed (SD) nucleus. A brief review of superdeformation is given, with emphasis on the tunneling from the false to the true vacuum, which occurs in the feeding and decay of SD bands. During the feeding process the tunneling is between hot states, while in the decay it is from a cold to a hot state. The γ spectra connecting SD and normal-deformed (ND) states provide information on several physics issues: the decay mechanism; the spin/parity quantum numbers, energies and microscopic structures of SD bands; the origin of identical SD bands; the quenching of pairing with excitation energy; and the chaoticity of excited ND states at 2.5-5 MeV. Other examples of tunneling in nuclei, which are briefly described, include the possible role of tunneling in ΔI = 4 bifurcation in SD bands, sub-barrier fusion and proton emitters

  1. Tunneling from super- to normal-deformed minima in nuclei.

    Energy Technology Data Exchange (ETDEWEB)

    Khoo, T. L.

    1998-01-08

    An excited minimum, or false vacuum, gives rise to a highly elongated superdeformed (SD) nucleus. A brief review of superdeformation is given, with emphasis on the tunneling from the false to the true vacuum, which occurs in the feeding and decay of SD bands. During the feeding process the tunneling is between hot states, while in the decay it is from a cold to a hot state. The {gamma} spectra connecting SD and normal-deformed (ND) states provide information on several physics issues: the decay mechanism; the spin/parity quantum numbers, energies and microscopic structures of SD bands; the origin of identical SD bands; the quenching of pairing with excitation energy; and the chaoticity of excited ND states at 2.5-5 MeV. Other examples of tunneling in nuclei, which are briefly described, include the possible role of tunneling in {Delta}I = 4 bifurcation in SD bands, sub-barrier fusion and proton emitters.

  2. The Beginner's Guide to Wind Tunnels with TunnelSim and TunnelSys

    Science.gov (United States)

    Benson, Thomas J.; Galica, Carol A.; Vila, Anthony J.

    2010-01-01

    The Beginner's Guide to Wind Tunnels is a Web-based, on-line textbook that explains and demonstrates the history, physics, and mathematics involved with wind tunnels and wind tunnel testing. The Web site contains several interactive computer programs to demonstrate scientific principles. TunnelSim is an interactive, educational computer program that demonstrates basic wind tunnel design and operation. TunnelSim is a Java (Sun Microsystems Inc.) applet that solves the continuity and Bernoulli equations to determine the velocity and pressure throughout a tunnel design. TunnelSys is a group of Java applications that mimic wind tunnel testing techniques. Using TunnelSys, a team of students designs, tests, and post-processes the data for a virtual, low speed, and aircraft wing.

  3. Effect of film roughness in Fe/MgO/Fe magnetic tunnel junctions: model calculations

    Energy Technology Data Exchange (ETDEWEB)

    Edalati Boostan, Saeideh; Heiliger, Christian [I. Physikalisches Institut, Justus Liebig University Giessen, D-35392 (Germany); Moradi, Hosein [Department of Physics,Faculty of Sciences, Ferdowsi University of Mashhad, Mashhad (Iran, Islamic Republic of)

    2011-07-01

    We calculate how interface roughness affects the tunneling magnetoresistance (TMR) in Fe/MgO/Fe (100) junctions. The used method is based on a single-band tight-binding (SBTB) approximation employing the Green's function formalism. We investigate the influence of disorder at the TMR ratio. Thereby, the disorder is modeled by considering different occupation probabilities of Fe and MgO at interface sites. We calculate the current densities for parallel and anti-parallel configurations for different disorders. The results show that the roughness decreases the TMR that match well with experimental observations.

  4. Spin-polarized tunneling through a ferromagnetic insulator

    NARCIS (Netherlands)

    Kok, M.; Kok, M.; Beukers, J.N.; Brinkman, Alexander

    2009-01-01

    The polarization of the tunnel conductance of spin-selective ferromagnetic insulators is modeled, providing a generalized concept of polarization including both the effects of electrode and barrier polarization. The polarization model is extended to take additional non-spin-polarizing insulating

  5. Multi-particle assembled porous nanostructured MgO: its application in fluoride removal

    International Nuclear Information System (INIS)

    Gangaiah, Vijayakumar; Chandrappa, Gujjarahalli Thimanna; Siddaramanna, Ashoka

    2014-01-01

    In this article, a simple and economical route based on ethylene glycol mediated process was developed to synthesize one-dimensional (1D) multiparticle assembled nanostructured MgO using magnesium acetate and urea as reactants. Porous multiparticle chain-like MgO has been synthesized by the calcination of a solvothermally derived single nanostructured precursor. The prepared products were characterized by an x-ray diffraction (XRD) pattern, thermogravimetry, scanning/transmission electron microscopy (SEM/TEM) and N 2 adsorption (BET). As a proof of concept, the porous multiparticle chain-like MgO has been applied in a water treatment for isolated and rural communities, and it has exhibited an excellent adsorption capability to remove fluoride in waste water. In addition, this method could be generalized to prepare other 1D nanostructures with great potential for various attractive applications. (paper)

  6. Defect induced ferromagnetism in MgO nanoparticles studied by optical and positron annihilation spectroscopy

    Science.gov (United States)

    Kumar, Nitesh; Sanyal, D.; Sundaresan, A.

    2009-08-01

    Positron annihilation spectroscopy has been used to explore the nature of defects and to estimate the defect concentrations in ferromagnetic MgO nanoparticles. Our experimental results show that Mg vacancies or Mg vacancy concentration are present approximately at the concentration of 3.4 × 10 16 cm -3 in the nano-crystalline MgO which is twice the value that obtained for bulk sample. This is in correlation with the decrease of the intensity of blue luminescence and the saturation magnetic moment with increasing particle size. These results clearly demonstrate that the origin of magnetic moment and thus the ferromagnetism in MgO nanoparticles is due to Mg related vacancies at the surface of the particles.

  7. Low-pressure Environmental TEM (ETEM) studies of Au assisted MgO nanorod growth

    DEFF Research Database (Denmark)

    Duchstein, Linus Daniel Leonhard; Damsgaard, Christian Danvad; Hansen, Thomas Willum

    2012-01-01

    where they become inactive for CO oxidation. Here, we present an environmental transmission electron microscopy (ETEM) study of shape changes of Au nanoparticles supported on MgO in a controlled gas atmosphere, in order to elucidate the mobility of surface species and the configuration of the Au...... and interface structure of supported nanoparticles in a controlled environment [7]. This allows for a deeper understanding of the dynamic response of the surface and interface to changes in gas composition, pressure and temperature. Additionally, an Ultra High Vacuum (UHV) TEM has been used in order to have...... a higher degree of control of the initial state and probe the low-pressure regime. This combination is a powerful toolbox for charactering the behavior of the mobility of atomic species at the MgO surface leading to the formation of nanorods. Figure 1 shows Au particles on MgO cubes being irradiated...

  8. Dislocations and Plastic Deformation in MgO Crystals: A Review

    Directory of Open Access Journals (Sweden)

    Jonathan Amodeo

    2018-05-01

    Full Text Available This review paper focuses on dislocations and plastic deformation in magnesium oxide crystals. MgO is an archetype ionic ceramic with refractory properties which is of interest in several fields of applications such as ceramic materials fabrication, nano-scale engineering and Earth sciences. In its bulk single crystal shape, MgO can deform up to few percent plastic strain due to dislocation plasticity processes that strongly depend on external parameters such as pressure, temperature, strain rate, or crystal size. This review describes how a combined approach of macro-mechanical tests, multi-scale modeling, nano-mechanical tests, and high pressure experiments and simulations have progressively helped to improve our understanding of MgO mechanical behavior and elementary dislocation-based processes under stress.

  9. Experimental Evidence for Wigner’s Tunneling Time

    Science.gov (United States)

    Camus, N.; Yakaboylu, E.; Fechner, L.; Klaiber, M.; Laux, M.; Mi, Y.; Hatsagortsyan, K. Z.; Pfeifer, T.; Keitel, C. H.; Moshammer, R.

    2018-04-01

    Tunneling of a particle through a barrier is one of the counter-intuitive properties of quantum mechanical motion. Thanks to advances in the generation of strong laser fields, new opportunities to dynamically investigate this process have been developed. In the so-called attoclock measurements the electron’s properties after tunneling are mapped on its emission direction. We investigate the tunneling dynamics and achieve a high sensitivity thanks to two refinements of the attoclock principle. Using near-IR wavelength we place firmly the ionization process in the tunneling regime. Furthermore, we compare the electron momentum distributions of two atomic species of slightly different atomic potentials (argon and krypton) being ionized under absolutely identical conditions. Experimentally, using a reaction microscope, we succeed in measuring the 3D electron momentum distributions for both targets simultaneously. Theoretically, the time resolved description of tunneling in strong-field ionization is studied using the leading quantum-mechanical Wigner treatment. A detailed analysis of the most probable photoelectron emission for Ar and Kr allows testing the theoretical models and a sensitive check of the electron initial conditions at the tunnel exit. The agreement between experiment and theory provides a clear evidence for a non-zero tunneling time delay and a non-vanishing longitudinal momentum at this point.

  10. Tunneling Planar Hall Effect in Topological Insulators: Spin Valves and Amplifiers.

    Science.gov (United States)

    Scharf, Benedikt; Matos-Abiague, Alex; Han, Jong E; Hankiewicz, Ewelina M; Žutić, Igor

    2016-10-14

    We investigate tunneling across a single ferromagnetic barrier on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a tunneling planar Hall conductance (TPHC), transverse to the applied bias, develops. Electrostatic control of the barrier enables a giant Hall angle, with the TPHC exceeding the longitudinal tunneling conductance. By changing the in-plane magnetization direction, it is possible to change the sign of both the longitudinal and transverse differential conductance without opening a gap in the topological surface state. The transport in a topological-insulator-ferromagnet junction can, thus, be drastically altered from a simple spin valve to an amplifier.

  11. Mechanism of Enhancing Extraction of Vanadium from Stone Coal by Roasting with MgO

    Directory of Open Access Journals (Sweden)

    Fang Chen

    2017-02-01

    Full Text Available In this paper, the extraction of vanadium from stone coal by roasting with MgO and leaching with sulfuric acid has been investigated, and the mechanism analysis of stone coal roasting with MgO was studied. The results indicated that under the conditions that the mass fraction of the particles with grain size of 0–0.074 mm in raw ore was 75%, the roasting temperature was 500 °C, the roasting time was 1 h, MgO addition was 3 wt %, the sulfuric acid concentration was 20 vol %, the liquid-to-solid ratio was 1.5 mL/g, the leaching temperature was 95 °C, and leaching time was 2 h, resulting in a vanadium leaching efficiency of 86.63%, which increased by 7.73% compared with that of blank roasting. The mechanism analysis showed that the degree of calcite decomposition was low and, thus, magnesium vanadate was more easily formed than calcium vanadate below 500 °C. Moreover, magnesium vanadate was easier to dissolve than calcium vanadate during the sulfuric acid leaching process. Thus, the vanadium leaching efficiency was enhanced by using MgO as a roasting additive below 500 °C. Additionally, at high temperature the formation of tremolite would consume calcium oxide produced from the decomposition of calcite, thus, the formation of calcium vanadate was hindered, and V2O5 would react with MgO to form magnesium vanadate. Therefore, the vanadium leaching efficiency of roasting with MgO was higher than that of blank roasting at high temperature.

  12. Grain boundaries at the surface of consolidated MgO nanocrystals and acid-base functionality.

    Science.gov (United States)

    Vingurt, Dima; Fuks, David; Landau, Miron V; Vidruk, Roxana; Herskowitz, Moti

    2013-09-21

    The increase of the surface basicity-acidity of MgO material by factors of 1.8-3.0 due to consolidation of its nanocrystals was demonstrated by the indicator titration. It was shown that the parallel increase of surface acidity and basicity is attributed to the formation of grain boundaries (GB) after MgO aerogel densification. A simple model predicting the increase of surface acidity-basicity of MgO that correlates with the results of direct measurements was proposed. The model is based on the study of the fine atomic structure at GB surface areas in consolidated MgO nanocrystals in the framework of Density Functional Theory. It is found that the displacements of coordinatively unsaturated surface ions near the GB are significant at the distances ~3-4 atomic layers from the geometrical contact plane between nanocrystals. The detailed analysis of atomic positions inside GB demonstrated the coordination deficiency of surface atoms at the GB areas leading to the formation of stretched bonds and to creation of low coordinated surface ions due to splitting of coordination numbers of surface atoms belonging to GB areas. Density of states for electrons shows the existence of additional states in the band gap close to the bottom of the conduction band. The adsorption energy of CO2 molecules atop oxygen atoms exposed at surface GB areas is of the same order of magnitude as that reported for oxygen atoms at crystallographic edges and corners of MgO crystals. It provides additional options for bonding of molecules at the surface of nanocrystalline MgO increasing the adsorption capacity and catalytic activity.

  13. Spin-dependent quasiparticle tunneling in junction superconductor-isolator-ferromagnetic

    International Nuclear Information System (INIS)

    Shlapak, Yu.V.; Shaternik, V.E.; Rudenko, E.M.

    2001-01-01

    The influence of Andreev reflection of quasiparticles in transparent tunnel junctions of superconductor-isolator-ferromagnetic on electric-current transport is studied within the framework of the Blonder-Tinkham-Klapwijk (BTK) model. It's obtained that current and signal-to-noise ratio can be increased for the memory cell by using in it the double-barrier tunnel junction ferromagnetic-isolator-superconductor-isolator-ferromagnetic instead off the usual tunnel junction ferromagnetic-isolator-ferromagnetic. The evolution of non-linear (tunnel-type) current-voltage characteristics with increasing of the junction transparency is described. (orig.)

  14. Delay time and tunneling transient phenomena

    International Nuclear Information System (INIS)

    Garcia-Calderon, Gaston; Villavicencio, Jorge

    2002-01-01

    Analytic solutions to the time-dependent Schroedinger equation for cutoff wave initial conditions are used to investigate the time evolution of the transmitted probability density for tunneling. For a broad range of values of the potential barrier opacity α, we find that the probability density exhibits two evolving structures. One refers to the propagation of a forerunner related to a time domain resonance [Phys. Rev. A 64, 0121907 (2001)], while the other consists of a semiclassical propagating wave front. We find a regime where the forerunners are absent, corresponding to positive time delays, and show that this regime is characterized by opacities α c . The critical opacity α c is derived from the analytical expression for the delay time, which reflects a link between transient effects in tunneling and the delay time

  15. Small Numbers From Tunneling Between Brane Throats

    Energy Technology Data Exchange (ETDEWEB)

    Kachru, Shamit

    2001-07-25

    Generic classes of string compactifications include ''brane throats'' emanating from the compact dimensions and separated by effective potential barriers raised by the background gravitational fields. The interaction of observers inside different throats occurs via tunneling and is consequently weak. This provides a new mechanism for generating small numbers in Nature. We apply it to the hierarchy problem, where supersymmetry breaking near the unification scale causes TeV sparticle masses inside the standard model throat. We also design naturally long-lived cold dark matter which decays within a Hubble time to the approximate conformal matter of a long throat. This may soften structure formation at galactic scales and raises the possibility that much of the dark matter of the universe is conformal matter. Finally, the tunneling rate shows that the coupling between throats, mediated by bulk modes, is stronger than a naive application of holography suggests.

  16. Discharge characteristics of plasma display panels with Si-doped MgO protective layers

    Energy Technology Data Exchange (ETDEWEB)

    Ram, Sanjay K., E-mail: sanjayk.ram@gmail.co [Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 du CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex (France); Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Barik, U K [Samtel Color Limited, Ghaziabad-201009 (India); Sarkar, Surajit; Biswas, Paramananda [Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Singh, Vandana [Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 du CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex (France); Dwivedi, H K [Samtel Color Limited, Ghaziabad-201009 (India); Kumar, Satyendra [Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India)

    2009-10-01

    We report on our study of the influence of varying concentrations of Si doping on the secondary electron emission (SEE) yield of MgO thin films prepared by electron beam evaporation technique. The series of Si-doped MgO films were microstructurally characterized with various tools like X-ray diffraction, scanning electron microscopy and atomic force microscopy. The optimization of the concentration of Si doping is seen to enhance the SEE yield. We discuss the correlation of SEE yield in the context of different deposition and measurement conditions and crystalline orientation.

  17. Preparation of nanocrystalline MgO by surfactant assisted precipitation method

    International Nuclear Information System (INIS)

    Rezaei, Mehran; Khajenoori, Majid; Nematollahi, Behzad

    2011-01-01

    Highlights: → Nanocrystalline magnesium oxide with high surface area. → MgO prepared with surfactant showed different morphologies compared with the sample prepared without surfactant. → MgO prepared with surfactant showed a plate-like shape. → Refluxing temperature and time and the surfactant to metal molar ratio affect the textural properties of MgO. -- Abstract: Nanocrystalline magnesium oxide with high surface area was prepared by a simple precipitation method using pluronic P123 triblock copolymer (Poly (ethylene glycol)-block, Poly (propylene glycol)-block, Poly (ethylene glycol)) as surfactant and under refluxing conditions. The prepared samples were characterized by X-ray diffraction (XRD), N 2 adsorption (BET) and scanning and transmission electron microscopies (SEM and TEM). The obtained results revealed that the refluxing time and temperature and the molar ratio of surfactant to metal affect the structural properties of MgO, because of the changes in the rate and extent of P123 adsorption on the prepared samples. The results showed that the addition of surfactant is effective to prepare magnesium oxide with high surface area and affects the morphology of the prepared samples. With increasing the P123/MgO molar ratio to 0.05 the pore size distribution was shifted to larger size. The sample prepared with addition of surfactant showed a plate-like shape which was completely different with the morphology of the sample prepared without surfactant. The formation of nanoplate-like MgO was related to higher surface density of Mg ions on the (0 0 1) plane than that on the other planes of the Mg(OH) 2 crystal. The (0 0 1) plane would be blocked preferentially by the adsorbed P123 molecules during the growing process of Mg(OH) 2 nanoentities and the growth on the (0 0 1) plane would be markedly restricted, and the consequence is the generation of nanoplate-like MgO. In addition, increase in refluxing temperature and time increased the specific surface area

  18. Preparation of nanocrystalline MgO by surfactant assisted precipitation method

    Energy Technology Data Exchange (ETDEWEB)

    Rezaei, Mehran, E-mail: rezaei@kashanu.ac.ir [Catalyst and Advanced Materials Research Laboratory, Chemical Engineering Department, Faculty of Engineering, University of Kashan, Kashan (Iran, Islamic Republic of); Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan (Iran, Islamic Republic of); Khajenoori, Majid; Nematollahi, Behzad [Catalyst and Advanced Materials Research Laboratory, Chemical Engineering Department, Faculty of Engineering, University of Kashan, Kashan (Iran, Islamic Republic of)

    2011-10-15

    Highlights: {yields} Nanocrystalline magnesium oxide with high surface area. {yields} MgO prepared with surfactant showed different morphologies compared with the sample prepared without surfactant. {yields} MgO prepared with surfactant showed a plate-like shape. {yields} Refluxing temperature and time and the surfactant to metal molar ratio affect the textural properties of MgO. -- Abstract: Nanocrystalline magnesium oxide with high surface area was prepared by a simple precipitation method using pluronic P123 triblock copolymer (Poly (ethylene glycol)-block, Poly (propylene glycol)-block, Poly (ethylene glycol)) as surfactant and under refluxing conditions. The prepared samples were characterized by X-ray diffraction (XRD), N{sub 2} adsorption (BET) and scanning and transmission electron microscopies (SEM and TEM). The obtained results revealed that the refluxing time and temperature and the molar ratio of surfactant to metal affect the structural properties of MgO, because of the changes in the rate and extent of P123 adsorption on the prepared samples. The results showed that the addition of surfactant is effective to prepare magnesium oxide with high surface area and affects the morphology of the prepared samples. With increasing the P123/MgO molar ratio to 0.05 the pore size distribution was shifted to larger size. The sample prepared with addition of surfactant showed a plate-like shape which was completely different with the morphology of the sample prepared without surfactant. The formation of nanoplate-like MgO was related to higher surface density of Mg ions on the (0 0 1) plane than that on the other planes of the Mg(OH){sub 2} crystal. The (0 0 1) plane would be blocked preferentially by the adsorbed P123 molecules during the growing process of Mg(OH){sub 2} nanoentities and the growth on the (0 0 1) plane would be markedly restricted, and the consequence is the generation of nanoplate-like MgO. In addition, increase in refluxing temperature and time

  19. Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

    KAUST Repository

    Jin Hu, Wei; Wang, Zhihong; Yu, Weili; Wu, Tao

    2016-01-01

    Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.

  20. Tip-induced local strain on Mo S2/graphite detected by inelastic electron tunneling spectroscopy

    Science.gov (United States)

    Ko, Wonhee; Hus, Saban M.; Li, Xufan; Berlijn, Tom; Nguyen, Giang D.; Xiao, Kai; Li, An-Ping

    2018-03-01

    We report the detection of tip-induced local strain applied to the monolayer Mo S2 grown on a graphite substrate by scanning tunneling microscope. Monolayer Mo S2 behaves as both mechanical and tunneling barriers that prevent the tip from contacting the graphite while maintaining the tunneling current. Inelastic tunneling electron spectroscopy (IETS) is utilized to probe the phonon modes in graphite. As the tip pushes the sample, IETS reveals a continuous phonon softening in graphite, corroborated by a downward shift of the phonon energy as calculated by density-functional theory. Our results demonstrate a way to apply local mechanical strain and simultaneously detect the induced change in phonon modes by unitizing IETS with two-dimensional materials as a tunneling barrier.

  1. Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

    KAUST Repository

    Jin Hu, Wei

    2016-02-29

    Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.

  2. Adsorption and dissociation of dinitrogen on transition metal (Ta, W and Re) doped MgO surface

    KAUST Repository

    Yadav, Manoj Kumar; Vovusha, Hakkim; Sanyal, Biplab

    2016-01-01

    The adsorption and dissociation of dinitrogen on transition metal (Ta, W and Re) doped MgO(100) surface has been studied employing density functional theory. It is found that all these transition metals (TM) on MgO(100) surface are capable

  3. Tailoring the microstructure of porous MgO supports for asymmetric oxygen separation membranes: Optimization of thermoplastic feedstock systems

    DEFF Research Database (Denmark)

    Kothanda Ramachandran, Dhavanesan; Clemens, F.; Glasscock, Julie

    2014-01-01

    Porous magnesium oxide (MgO) structures were prepared by thermoplastic processing for use as supports in asymmetric thin film oxygen transport membranes (OTMs). The open porosity, pore size distribution, and resulting gas permeability of the MgO structures were measured for different feedstock...

  4. Ethanol-to-Butadiene Conversion over SiO2-MgO Catalysts: Synthesis-Structure-Performance Relationships

    NARCIS (Netherlands)

    Angelici, C.

    2015-01-01

    The work presented in this PhD Thesis provides new insights into the underlying reasons that make SiO2-MgO materials excellent catalysts for the ethanol-to-butadiene Lebedev process. In particular, the preparation technique of choice affects the structural properties of the resulting SiO2-MgO

  5. Tunable reactivity of supported single metal atoms by impurity engineering of the MgO(001) support.

    Science.gov (United States)

    Pašti, Igor A; Johansson, Börje; Skorodumova, Natalia V

    2018-02-28

    Development of novel materials may often require a rational use of high price components, like noble metals, in combination with the possibility to tune their properties in a desirable way. Here we present a theoretical DFT study of Au and Pd single atoms supported by doped MgO(001). By introducing B, C and N impurities into the MgO(001) surface, the interaction between the surface and the supported metal adatoms can be adjusted. Impurity atoms act as strong binding sites for Au and Pd adatoms and can help to produce highly dispersed metal particles. The reactivity of metal atoms supported by doped MgO(001), as probed by CO, is altered compared to their counterparts on pristine MgO(001). We find that Pd atoms on doped MgO(001) are less reactive than on perfect MgO(001). In contrast, Au adatoms bind CO much more strongly when placed on doped MgO(001). In the case of Au on N-doped MgO(001) we find that charge redistribution between the metal atom and impurity takes place even when not in direct contact, which enhances the interaction of Au with CO. The presented results suggest possible ways for optimizing the reactivity of oxide supported metal catalysts through impurity engineering.

  6. F + centre generation in MgO crystals at high density of excitation by accelerated electrons of subthreshold energy

    Science.gov (United States)

    Annenkov, Y. M.; Surzhikov, A. P.; Surzhikov, V. P.; Pogrebnjak, A. D.

    1981-07-01

    Optical absorption spectra and the angular distribution of annihilated positrons in MgO crystals irradiated by subtreshold superdense electron pulses are measured. The experimental results obtained show the effective contribution of the creation mechanism of non-impact radiation defects in MgO crystals at the highest electron irradiation densities.

  7. Single Electron Tunneling

    International Nuclear Information System (INIS)

    Ruggiero, Steven T.

    2005-01-01

    Financial support for this project has led to advances in the science of single-electron phenomena. Our group reported the first observation of the so-called ''Coulomb Staircase'', which was produced by tunneling into ultra-small metal particles. This work showed well-defined tunneling voltage steps of width e/C and height e/RC, demonstrating tunneling quantized on the single-electron level. This work was published in a now well-cited Physical Review Letter. Single-electron physics is now a major sub-field of condensed-matter physics, and fundamental work in the area continues to be conducted by tunneling in ultra-small metal particles. In addition, there are now single-electron transistors that add a controlling gate to modulate the charge on ultra-small photolithographically defined capacitive elements. Single-electron transistors are now at the heart of at least one experimental quantum-computer element, and single-electron transistor pumps may soon be used to define fundamental quantities such as the farad (capacitance) and the ampere (current). Novel computer technology based on single-electron quantum dots is also being developed. In related work, our group played the leading role in the explanation of experimental results observed during the initial phases of tunneling experiments with the high-temperature superconductors. When so-called ''multiple-gap'' tunneling was reported, the phenomenon was correctly identified by our group as single-electron tunneling in small grains in the material. The main focus throughout this project has been to explore single electron phenomena both in traditional tunneling formats of the type metal/insulator/particles/insulator/metal and using scanning tunneling microscopy to probe few-particle systems. This has been done under varying conditions of temperature, applied magnetic field, and with different materials systems. These have included metals, semi-metals, and superconductors. Amongst a number of results, we have

  8. Interferometry of Klein tunnelling electrons in graphene quantum rings

    Science.gov (United States)

    de Sousa, D. J. P.; Chaves, Andrey; Pereira, J. M.; Farias, G. A.

    2017-01-01

    We theoretically study a current switch that exploits the phase acquired by a charge carrier as it tunnels through a potential barrier in graphene. The system acts as an interferometer based on an armchair graphene quantum ring, where the phase difference between interfering electronic wave functions for each path can be controlled by tuning either the height or the width of a potential barrier in the ring arms. By varying the parameters of the potential barriers, the interference can become completely destructive. We demonstrate how this interference effect can be used for developing a simple graphene-based logic gate with a high on/off ratio.

  9. Salecker-Wigner-Peres clock and average tunneling times

    International Nuclear Information System (INIS)

    Lunardi, Jose T.; Manzoni, Luiz A.; Nystrom, Andrew T.

    2011-01-01

    The quantum clock of Salecker-Wigner-Peres is used, by performing a post-selection of the final state, to obtain average transmission and reflection times associated to the scattering of localized wave packets by static potentials in one dimension. The behavior of these average times is studied for a Gaussian wave packet, centered around a tunneling wave number, incident on a rectangular barrier and, in particular, on a double delta barrier potential. The regime of opaque barriers is investigated and the results show that the average transmission time does not saturate, showing no evidence of the Hartman effect (or its generalized version).

  10. Formation of aluminum titanate with small additions of MgO and SiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Guedes-Silva, Cecilia Chaves; Ferreira, Thiago dos Santos; Genova, Luis Antonio [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Carvalho, Flavio Machado de Souza, E-mail: cecilia.guedes@ipen.br [Universidade de Sao Paulo (USP), Sao Paulo, SP (Brazil). Instituto de Geociencias

    2016-03-15

    The formation of aluminum titanate was investigated by isothermal treatments of samples obtained from equimolar mixtures of alumina and titania, containing small amounts of silica and magnesia. Results of differential thermal analysis and Rietveld refinements of data collected by X-ray powder diffraction (XRPD) showed that additions of silica in amounts used in this work did not influence the formation of aluminum titanate. However, the presence of magnesia favored the formation of aluminum titanate in two steps, first one by incorporating Mg{sup 2+} into Al{sub 2}TiO{sub 5} lattice during its initial formation, and the second one by accelerating the Al{sub 2}TiO{sub 5} formation, contributing to large quantities of this phase. MgO doped samples have also developed a more suitable microstructure for stabilizing of Al{sub 2}TiO{sub 5}, what make them promising for applications such as thermal barriers, internal combustion engines and support material for catalyst. (author)

  11. Resonant tunnel magnetoresistance in a double magnetic tunnel junction

    KAUST Repository

    Useinov, Arthur; Useinov, Niazbeck Kh H; Tagirov, Lenar R.; Kosel, Jü rgen

    2011-01-01

    We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can

  12. Theory of chaos regularization of tunneling in chaotic quantum dots.

    Science.gov (United States)

    Lee, Ming-Jer; Antonsen, Thomas M; Ott, Edward; Pecora, Louis M

    2012-11-01

    Recent numerical experiments of Pecora et al. [Phys. Rev. E 83, 065201 (2011)] have investigated tunneling between two-dimensional symmetric double wells separated by a tunneling barrier. The wells were bounded by hard walls and by the potential barrier which was created by a step increase from the zero potential within a well to a uniform barrier potential within the barrier region, which is a situation potentially realizable in the context of quantum dots. Numerical results for the splitting of energy levels between symmetric and antisymmetric eigenstates were calculated. It was found that the splittings vary erratically from state to state, and the statistics of these variations were studied for different well shapes with the fluctuation levels being much less in chaotic wells than in comparable nonchaotic wells. Here we develop a quantitative theory for the statistics of the energy level splittings for chaotic wells. Our theory is based on the random plane wave hypothesis of Berry. While the fluctuation statistics are very different for chaotic and nonchaotic well dynamics, we show that the mean splittings of differently shaped wells, including integrable and chaotic wells, are the same if their well areas and barrier parameters are the same. We also consider the case of tunneling from a single well into a region with outgoing quantum waves.

  13. Polymer-mediated tunneling transport between carbon nanotubes in nanocomposites.

    Science.gov (United States)

    Derosa, Pedro A; Michalak, Tyler

    2014-05-01

    Electron transport in nanocomposites has attracted a good deal of attention for some time now; furthermore, the ability to control its characteristics is a necessary step in the design of multifunctional materials. When conductive nanostructures (for example carbon nanotubes) are inserted in a non-conductive matrix, electron transport below the percolation threshold is dominated by tunneling and thus the conductive characteristics of the composite depends heavily on the characteristics of the tunneling currents between nanoinserts. A parameter-free approach to study tunneling transport between carbon nanotubes across a polymer matrix is presented. The calculation is done with a combination of Density Functional Theory and Green functions (an approach heavily used in molecular electronics) which is shown here to be effective in this non-resonant transport condition. The results show that the method can effectively capture the effect of a dielectric layer in tunneling transport. The current is found to exponentially decrease with the size of the gap for both vacuum and polymer, and that the polymer layer lowers the tunneling barrier enhancing tunneling conduction. For a polyacrylonitrile matrix, a four-fold decrease in the tunneling constant, compared to tunneling in vacuum, is observed, a result that is consistent with available information. The method is very versatile as any DFT functional (or any other quantum mechanics method) can be used and thus the most accurate method for each particular system can be chosen. Furthermore as more methods become available, the calculations can be revised and improved. This approach can be used to design functional materials for fine-tunning the tunneling transport, for instance, the effect of modifying the nanoinsert-matrix interface (for example, by adding functional groups to carbon nanotubes) can be captured and the comparative performance of each interface predicted by simulation.

  14. Interaction between groundwater and TBM (Tunnel Boring Machine) excavated tunnels

    OpenAIRE

    Font Capó, Jordi

    2012-01-01

    A number of problems, e.g. sudden inflows are encountered during tunneling under the piezometric level, especially when the excavation crosses high transmissivity areas. These inflows may drag materials when the tunnel crosses low competent layers, resulting in subsidence, chimney formation and collapses. Moreover, inflows can lead to a decrease in head level because of aquifer drainage. Tunnels can be drilled by a tunnel boring machine (TBM) to minimize inflows and groundwater impacts, restr...

  15. Phonon structure in proximity tunnel junctions

    International Nuclear Information System (INIS)

    Zarate, H.G.; Carbotte, J.P.

    1985-01-01

    We have iterated to convergence, for the first time, a set of four coupled real axis Eliashberg equations for the superconducting gap and renormalization functions on each side of a proximity sandwich. We find that the phenomenological procedures developed to extract the size of the normal side electron-phonon interaction from tunneling data are often reasonable but may in some cases need modifications. In all the cases considered the superconducting phonon structure reflected on the normal side, as well as other structures, shows considerable agreement with experiment as to size, shape, and variation with barrier transmission coefficient. Finally, we study the effects of depairing on these structures

  16. Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells

    Science.gov (United States)

    Jehl, Zacharie; Suchet, Daniel; Julian, Anatole; Bernard, Cyril; Miyashita, Naoya; Gibelli, Francois; Okada, Yoshitaka; Guillemolles, Jean-Francois

    2017-02-01

    Double resonant tunneling barriers are considered for an application as energy selective contacts in hot carrier solar cells. Experimental symmetric and asymmetric double resonant tunneling barriers are realized by molecular beam epitaxy and characterized by temperature dependent current-voltage measurements. The negative differential resistance signal is enhanced for asymmetric heterostructures, and remains unchanged between low- and room-temperatures. Within Tsu-Esaki description of the tunnel current, this observation can be explained by the voltage dependence of the tunnel transmission amplitude, which presents a resonance under finite bias for asymmetric structures. This effect is notably discussed with respect to series resistance. Different parameters related to the electronic transmission of the structure and the influence of these parameters on the current voltage characteristic are investigated, bringing insights on critical processes to optimize in double resonant tunneling barriers applied to hot carrier solar cells.

  17. Resputtering effect during MgO buffer layer deposition by magnetron sputtering for superconducting coated conductors

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Shaozhu; Shi, Kai; Deng, Shutong; Han, Zhenghe [Applied Superconductivity Research Center, Department of Physics, Tsinghua University, Beijing 100084 (China); Feng, Feng, E-mail: feng.feng@sz.tsinghua.edu.cn; Lu, Hongyuan [Division of Advanced Manufacturing, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Qu, Timing; Zhu, Yuping [Department of Mechanical Engineering, Tsinghua University, Beijing 100084 (China); Huang, Rongxia [School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006 (China)

    2015-07-15

    In this study, MgO thin films were deposited by radio-frequency magnetron sputtering. The film thickness in the deposition area directly facing the target center obviously decreased compared with that in other areas. This reduction in thickness could be attributed to the resputtering effect resulting from bombardment by energetic particles mainly comprising oxygen atoms and negative oxygen ions. The influences of deposition position and sputtering pressure on the deposition rate were investigated. Resputtering altered the orientation of the MgO film from (111) to (001) when the film was deposited on a single crystal yttria-stabilized zirconia substrate. The density distribution of energetic particles was calculated on the basis of the measured thicknesses of the MgO films deposited at different positions. The divergence angle of the energetic particle flux was estimated to be approximately 15°. The energetic particle flux might be similar to the assisting ion flux in the ion beam assisted deposition process and could affect the orientation of the MgO film growth.

  18. Synthesis, characterization, and catalytic property of nanosized MgO flakes with different shapes

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yongfen [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China); Hebei Vocational and Technical College of Building Materials, Qinhuangdao 066004 (China); Ma, Mingzhen, E-mail: mz550509@ysu.edu.cn [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China); Zhang, Xinyu; Wang, Baoan; Liu, Riping [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China)

    2014-03-25

    Highlights: • MgO nanoflakes with different morphologies were synthesized by a simple low-temperature hydrothermal process. • EDTA and KCl additives have a great effect on the morphology of the products. • Quasi-circular MgO nanoflakes exhibited higher catalytic activity on the thermal decomposition of ammonium perchlorate. -- Abstract: The nanostructures of quasi-circular and hexagonal magnesium oxide (MgO) flakes were successfully prepared by a simple low-temperature hydrothermal reaction. The morphologies were confirmed by field-emission scanning electron microscopy and transmission electron microscopy. Powder X-ray diffraction analysis showed that the nanostructures consisted of cubic-phase MgO. When ethylenediaminetetraacetic acid and potassium chloride were added to the reaction system, the shapes of the synthesized products were found to transform from hexagonal to quasi-circular nanoflakes for different time scales. Fourier-transform infrared spectroscopy indicated numerous hydroxyl radicals on the surface. Quasi-circular magnesia nanoflakes exhibited relatively high catalyst activity for the thermal decomposition of ammonium perchlorate. The mechanism of enhanced catalyst activity was also discussed.

  19. Roles of ethylene glycol solvent and polymers in preparing uniformly distributed MgO nanoparticles

    Directory of Open Access Journals (Sweden)

    Chunxi Hai

    2017-06-01

    Full Text Available This study focus on specifying the roles of solvent ethylene glycol (EG and polymers for synthesis of uniformly distributed magnesium oxide (MgO nanoparticles with average crystallite size of around 50 nm through a modified polyol method. Based on different characterization results, it was concluded that, Mg2+ ions was precipitated by the −OH and CO32− ions decomposed from urea in ethylene glycol (EG medium (CO(NH22 → NH3 + HNCO, HNCO + H2O → NH3 + CO2, thus forming well crystallized Mg5(CO34(OH2 (H2O4 precursor which could be converted to MgO by calcination. Surface protectors PEG and PVP have no obvious influences on cyrtsal structure, morphology and size uniformity of as-prepared precursors and target MgO nanoparticles. In comparison with polymers PEG and PVP, solvent EG plays an important role in controlling the morphology and diameter uniformity of MgO nanoparticles.

  20. MgO as a non-pyrolyzable pore former in porous membrane supports

    DEFF Research Database (Denmark)

    Haugen, A. B.; Geffroy, A.; Kaiser, Andreas

    2018-01-01

    the performance of oxygen transport membranes or other membranes relying on gas transport to the active membrane surface. Thermoplastic feedstocks for extrusion of tubular 3Y-TZP supports were prepared with four different amounts of pyrolyzable pore formers and/or MgO as non-pyrolyzable pore former. The Mg...