Sputter-deposited Mg-Al-O thin films: linking molecular dynamics simulations to experiments
International Nuclear Information System (INIS)
Georgieva, V; Bogaerts, A; Saraiva, M; Depla, D; Jehanathan, N; Lebelev, O I
2009-01-01
Using a molecular dynamics model the crystallinity of Mg x Al y O z thin films with a variation in the stoichiometry of the thin film is studied at operating conditions similar to the experimental operating conditions of a dual magnetron sputter deposition system. The films are deposited on a crystalline or amorphous substrate. The Mg metal content in the film ranged from 100% (i.e. MgO film) to 0% (i.e. Al 2 O 3 film). The radial distribution function and density of the films are calculated. The results are compared with x-ray diffraction and transmission electron microscopy analyses of experimentally deposited thin films by the dual magnetron reactive sputtering process. Both simulation and experimental results show that the structure of the Mg-Al-O film varies from crystalline to amorphous when the Mg concentration decreases. It seems that the crystalline Mg-Al-O films have a MgO structure with Al atoms in between.
Effect of substrate on texture and mechanical properties of Mg-Cu-Zn thin films
Eshaghi, F.; Zolanvari, A.
2018-04-01
In this work, thin films of Mg-Cu-Zn with 60 nm thicknesses have been deposited on the Si(100), Al, stainless steel, and Cu substrates using DC magnetron sputtering. FESEM images displayed uniformity of Mg-Cu-Zn particles on the different substrates. AFM micrograph revealed the roughness of thin film changes due to the different kinds of the substrates. XRD measurements showed the existence of strong Mg (002) reflections and weak Mg (101) peaks. Residual stress and adhesion force have been measured as the mechanical properties of the Mg-Cu-Zn thin films. The residual stresses of thin films which have been investigated by X-ray diffraction method revealed that the thin films sputtered on the Si and Cu substrates endure minimum and maximum stresses, respectively, during the deposition process. However, the force spectroscopy analysis indicated that the films grew on the Si and Cu experienced maximum and minimum adhesion force. The texture analysis has been done using XRD instrument to make pole figures of Mg (002) and Mg (101) reflections. ODFs have been calculated to evaluate the distribution of the orientations within the thin films. It was found that the texture and stress have an inverse relation, while the texture and the adhesion force of the Mg-Cu-Zn thin films have direct relation. A thin film that sustains the lowest residual stresses and highest adhesive force had the strongest {001} basal fiber texture.
Optical and structural properties of ZnO/ZnMgO composite thin films prepared by sol–gel technique
International Nuclear Information System (INIS)
Xu, Linhua; Su, Jing; Chen, Yulin; Zheng, Gaige; Pei, Shixin; Sun, Tingting; Wang, Junfeng; Lai, Min
2013-01-01
Highlights: ► ZnMgO thin film and ZnO/ZnMgO composite thin film have been prepared by sol–gel method. ► The intensity of ultraviolet emission of ZnMgO thin film is enhanced two times compared with that of pure ZnO thin film. ► Compared with ZnMgO thin film, ZnO/ZnMgO composite thin film shows better crystallization and optical properties. ► ZnO/ZnMgO composite thin films prepared by sol–gel method have potential applications in many optoelectronic devices. - Abstract: In this study, pure ZnO thin film, Mg-doped ZnO (ZnMgO) thin film, ZnO/ZnMgO and ZnMgO/ZnO composite thin films were prepared by sol–gel technique. The structural and optical properties of the samples were analyzed by X-ray diffraction, scanning electron microscopy, UV–visible spectrophotometer, ellipsometer and photoluminescence spectra, respectively. The results showed that the incorporation of Mg increased the strain, broadened the optical bandgap, and improved the intensity of ultraviolet emission of ZnO thin film. The full width at half maximum (FWHM) of the ultraviolet emission peak was also increased due to Mg-doping at the same time. Compared with pure ZnO and ZnMgO thin films, the ZnO/ZnMgO thin film showed better crystalline quality and ultraviolet emission performance, smaller strains and higher transmittance in the visible range.
Rozana, M. D.; Arshad, A. N.; Wahid, M. H. M.; Habibah, Z.; Sarip, M. N.; Rusop, M.
2018-05-01
This study investigates the effect of annealing on the topography, morphology and crystal phases of poly(vinylideneflouride)/Magnesium Oxide (MgO) nanocomposites thin films via AFM, FESEM and ATR-FTIR. The nanocomposites thin films were annealed at temperatures ranging from 70°C to 170°C. The annealed PVDF/MgO nanocomposites thin films were then cooled at room temperature before removal from the oven. This is to restructure the crystal lattice and to reduce imperfection for the PVDF/MgO nanocomposites thin films. PVDF/MgO nanocomposites thin films with annealing temperatures of 70°C, 90°C and 110°C showed uniform distribution of MgO nanoparticles, relatively low average surface roughness and no visible of defects. High application of annealing temperature on PVDF/MgO nanocomposites thin films caused tear-like defects on the thin films surface as observed by FESEM. The PVDF/MgO nanocomposites thin films annealed at 70°C was found to be a favourable film to be utilized in this study due to its enhanced β-crystalites of PVDF as evident in ATR-FTIR spectra.
MgB2 thin films by hybrid physical-chemical vapor deposition
International Nuclear Information System (INIS)
Xi, X.X.; Pogrebnyakov, A.V.; Xu, S.Y.; Chen, K.; Cui, Y.; Maertz, E.C.; Zhuang, C.G.; Li, Qi; Lamborn, D.R.; Redwing, J.M.; Liu, Z.K.; Soukiassian, A.; Schlom, D.G.; Weng, X.J.; Dickey, E.C.; Chen, Y.B.; Tian, W.; Pan, X.Q.; Cybart, S.A.; Dynes, R.C.
2007-01-01
Hybrid physical-chemical vapor deposition (HPCVD) has been the most effective technique for depositing MgB 2 thin films. It generates high magnesium vapor pressures and provides a clean environment for the growth of high purity MgB 2 films. The epitaxial pure MgB 2 films grown by HPCVD show higher-than-bulk T c due to tensile strain in the films. The HPCVD films are the cleanest MgB 2 materials reported, allowing basic research, such as on magnetoresistance, that reveals the two-band nature of MgB 2 . The carbon-alloyed HPCVD films demonstrate record-high H c2 values promising for high magnetic field applications. The HPCVD films and multilayers have enabled the fabrication of high quality MgB 2 Josephson junctions
Pulsed laser deposition of AlMgB14 thin films
Energy Technology Data Exchange (ETDEWEB)
Britson, Jason Curtis [Iowa State Univ., Ames, IA (United States)
2008-11-18
Hard, wear-resistant coatings of thin film borides based on AlMgB14 have the potential to be applied industrially to improve the tool life of cutting tools and pump vanes and may account for several million dollars in savings as a result of reduced wear on these parts. Past work with this material has shown that it can have a hardness of up to 45GPa and be fabricated into thin films with a similar hardness using pulsed laser deposition. These films have already been shown to be promising for industrial applications. Cutting tools coated with AlMgB14 used to mill titanium alloys have been shown to substantially reduce the wear on the cutting tool and extend its cutting life. However, little research into the thin film fabrication process using pulsed laser deposition to make AlMgB14 has been conducted. In this work, research was conducted into methods to optimize the deposition parameters for the AlMgB14 films. Processing methods to eliminate large particles on the surface of the AlMgB14 films, produce films that were at least 1m thick, reduce the surface roughness of the films, and improve the adhesion of the thin films were investigated. Use of a femtosecond laser source rather than a nanosecond laser source was found to be effective in eliminating large particles considered detrimental to wear reduction properties from the films. Films produced with the femtosecond laser were also found to be deposited at a rate 100 times faster than those produced with the nanosecond laser. However, films produced with the femtosecond laser developed a relatively high RMS surface roughness around 55nm. Attempts to decrease the surface roughness were largely unsuccessful. Neither increasing the surface temperature of the substrate during deposition nor using a double pulse to ablate the material was found to be extremely successful to reduce the surface roughness. Finally, the adhesion of the thin films to M2 tool steel
Electrical transport characterization of Al and Sn doped Mg 2 Si thin films
Zhang, Bo
2017-05-22
Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.
Growth of high quality large area MgB2 thin films by reactive evaporation
Moeckly, Brian H.; Ruby, Ward S.
2006-01-01
We report a new in-situ reactive deposition thin film growth technique for the production of MgB2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of high-quality MgB2 films for real-world applications. We have used this growth method, which incorporates a rotating pocket heater, to deposit MgB2 films on a variety of substrates, including single-crystalline, polycrystalline, metallic, and semiconductor materials u...
Synthesis and morphological modification of semiconducting Mg(Zn)Al(Ga)–LDH/ITO thin films
Energy Technology Data Exchange (ETDEWEB)
Valente, Jaime S., E-mail: jsanchez@imp.mx [Instituto Mexicano del Petróleo, Eje Central # 152, 07730 México D.F. (Mexico); López-Salinas, Esteban [Instituto Mexicano del Petróleo, Eje Central # 152, 07730 México D.F. (Mexico); Prince, Julia [Universidad Anáhuac México Norte, Av. Universidad Anáhuac # 46, Huixquilucan, Edo. de México 52786 (Mexico); González, Ignacio; Acevedo-Peña, Prospero [Universidad Autónoma Metropolitana-Iztapalapa, Departamento de Química, Apdo. Postal 55-534, 09340 México D.F. (Mexico); Ángel, Paz del [Instituto Mexicano del Petróleo, Eje Central # 152, 07730 México D.F. (Mexico)
2014-09-15
Layered double hydroxide (LDH) thin films with different chemical compositions (MgZnAl, MgZnGa, MgGaAl) and varying thicknesses were easily prepared by sol–gel method followed by dip-coating. Films were chemically uniform, transparent and well adhered to a conductive indium tin oxide (ITO) substrate. Structure, chemical composition and morphology of the thin films were characterized by XRD-GADDS, SEM-EDS and AFM. Additionally, the semiconducting properties of all the prepared films were studied through the Mott–Schottky relationship; such properties were closely related to the chemical compositions of the film. The films were characterized after electrochemical treatment and important modifications regarding surface morphology, particle and crystal sizes were observed. An in-depth study was conducted in order to investigate the effect of several different electrochemical treatments on the morphology, particle size distribution and crystal size of LDH thin films. Upon electrochemical treatment, the films' surface became smooth and the particles forming the films were transformed from flaky open LDH platelets to uniformly distributed close-packed LDH nanoparticles. - Highlights: • Semiconducting Mg(Zn)Al(Ga)–LDH/ITO thin films prepared by sol–gel. • LDH thin films show a turbostratic morphology made up of porous flakes. • Electrochemical treatments change the flaky structure into a nanoparticle array.
Electrical transport characterization of Al and Sn doped Mg 2 Si thin films
Zhang, Bo; Zheng, Tao; Sun, Ce; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N.; Quevedo-Lopez, Manuel; Gnade, Bruce E.
2017-01-01
Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed
Progress in the deposition of MgB2 thin films
International Nuclear Information System (INIS)
Xi, X X; Pogrebnyakov, A V; Zeng, X H; Redwing, J M; Xu, S Y; Li, Qi; Liu, Zi-Kui; Lettieri, J; Vaithyanathan, V; Schlom, D G; Christen, H M; Zhai, H Y; Goyal, A
2004-01-01
An MgB 2 thin film deposition technology is the first critical step in the development of superconducting electronics utilizing the 39 K superconductor. It turned out to be a challenging task due to the volatility of Mg and phase stability of MgB 2 , the low sticking coefficients of Mg at elevated temperatures, and the reactivity of Mg with oxygen. A brief overview of current deposition techniques is provided here from a thermodynamic perspective, with an emphasis on a very successful technique for high quality in situ epitaxial MgB 2 films, the hybrid physical-chemical vapour deposition. Examples of heterostructures of MgB 2 with other materials are also presented
Enhancement of Jc of MgB2 thin films by introduction of oxygen during deposition
International Nuclear Information System (INIS)
Mori, Zon; Doi, Toshiya; Hakuraku, Yoshinori; Kitaguchi, Hitoshi
2006-01-01
The introduction of various pinning center are examined as the effective means for improvement of J c of MgB 2 thin films. We have investigated the effects of introduction of oxygen during deposition on the superconducting properties of MgB 2 thin films. MgB 2 thin films were prepared on polished sapphire C(0001) single crystal substrates by using electron beam evaporation technique (EB) without any post-annealing. The background pressure was less than 1.3x10 -6 Pa. The evaporation flux ratio of Mg was set at 30 times as high as that of B, and the growth rate of MgB 2 film was 1nm/s. The film thickness was typically 300nm at 5min deposition. The substrate temperature was 245 deg. C. Under these conditions, we controlled the oxygen partial pressure (P O 2 ) within the range from 1.3x10 -6 to 1.3x10 -3 Pa by using a quadrapole mass spectrometer. Although T c of deposited thin film decreased in order of P O 2 , ΔM in the magnetization hysteresis loops measured from 0 to 6T at 4.2K increased up to 1.3x10 -5 . On the other hand, thin film prepared under P O 2 of 1.3x10 -3 Pa does not show superconducting transition. Between these films, there is no difference in the crystal structure from X-ray diffraction (XRD). These results suggest that the pinning center in the thin films increased by introduction of oxygen. Extremely small amount of oxygen introduction has enabled the control of growth of oxide
International Nuclear Information System (INIS)
Shikada, Kouhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi
2009-01-01
FeCo epitaxial films were prepared on MgO(100), MgO(110), and MgO(111) substrates by ultrahigh vacuum molecular beam epitaxy. FeCo thin films with (100), (211), and (110) planes parallel to the substrate surface grow on respective MgO substrates. FeCo/MgO interface structures are studied by high-resolution cross-sectional transmission electron microscopy and the epitaxial growth mechanism is discussed. Atomically sharp boundaries are recognized between the FeCo thin films and the MgO substrates where misfit dislocations are introduced in the FeCo thin films presumably to decrease the lattice misfits. Misfit dislocations are observed approximately every 9 and 1.4 nm in FeCo thin film at the FeCo/MgO(100) and the FeCo/MgO(110) interfaces, respectively. X-ray diffraction analysis indicates that the lattice spacing measured parallel to the single-crystal substrate surfaces are in agreement within 0.1% with those of the respective bulk values of Fe 50 Co 50 alloy crystal, showing that the FeCo film strain is very small. The magnetic anisotropies of these epitaxial films basically reflect the magnetocrystalline anisotropy of bulk FeCo alloy crystal
International Nuclear Information System (INIS)
Zhu Daoyun; Zheng Changxi; Wang Mingdong; Liu Yi; Chen Dihu; He Zhenhui; Wen Lishi; Cheung, W.Y.
2010-01-01
MgO thin films with high optical transmittances (more than 90%) were prepared by cathodic vacuum arc deposition technique. With the increase of arc current from 40 to 80 A, the deposition pressure decreases and the film thickness increases; the atomic ratio of Mg/O in MgO thin films (obtained by RBS) increases from 0.97 to 1.17, giving that deposited at 50 A most close to the stoichiometric composition of the bulk MgO; the grains of MgO thin films grow gradually as shown in SEM images. XRD patterns show that MgO (1 1 0) orientation is predominant for films prepared at the arc currents ranged from 50 to 70 A. The MgO (1 0 0) orientation is much enhanced and comparable to that of MgO (1 1 0) for films prepared at the arc current of 80 A. The secondary electron emission coefficient of MgO thin film increases with arc current ranged from 50 to 70 A.
Grain Growth in Nanocrystalline Mg-Al Thin Films
Energy Technology Data Exchange (ETDEWEB)
Kruska, Karen; Rohatgi, Aashish; Vemuri, Venkata Rama Ses; Kovarik, Libor; Moser, Trevor H.; Evans, James E.; Browning, Nigel D.
2017-10-05
An improved understanding of grain growth kinetics in nanocrystalline materials, and in metals and alloys in general, is of continuing interest to the scientific community. In this study, Mg - Al thin films containing ~10 wt.% Al and with 14.5 nm average grain size were produced by magnetron-sputtering and subjected to heat-treatments. The grain growth evolution in the early stages of heat treatment at 423 K (150 °C), 473 K (200 °C) and 573K (300 °C) was observed with transmission electron microscopy and analyzed based upon the classical equation developed by Burke and Turnbull. The grain growth exponent was found to be 7±2 and the activation energy for grain growth was 31.1±13.4 kJ/mol, the latter being significantly lower than in bulk Mg-Al alloys. The observed grain growth kinetics are explained by the Al supersaturation in the matrix and the pinning effects of the rapidly forming beta precipitates and possibly shallow grain boundary grooves. The low activation energy is attributed to the rapid surface diffusion which is dominant in thin film systems.
Growth of high-quality large-area MgB2 thin films by reactive evaporation
International Nuclear Information System (INIS)
Moeckly, B H; Ruby, W S
2006-01-01
We report a new in situ reactive deposition thin film growth technique for the production of MgB 2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of high-quality MgB 2 films for real-world applications. We have used this growth method, which incorporates a rotating pocket heater, to deposit MgB 2 films on a variety of substrates, including single-crystalline, polycrystalline, metallic, and semiconductor materials up to 4 inch in diameter. This technique allows growth of double-sided, large-area films in the intermediate temperature range of 400-600 deg. C. These films are clean, well-connected, and consistently display T c values of 38-39 K with low resistivity and residual resistivity values. They are also robust and uncommonly stable upon exposure to atmosphere and water. (rapid communication)
Molecular-Beam Epitaxially Grown MgB2 Thin Films and Superconducting Tunnel Junctions
Directory of Open Access Journals (Sweden)
Jean-Baptiste Laloë
2011-01-01
Full Text Available Since the discovery of its superconducting properties in 2001, magnesium diboride has generated terrific scientific and engineering research interest around the world. With a of 39 K and two superconducting gaps, MgB2 has great promise from the fundamental point of view, as well as immediate applications. Several techniques for thin film deposition and heterojunction formation have been established, each with its own advantages and drawbacks. Here, we will present a brief overview of research based on MgB2 thin films grown by molecular beam epitaxy coevaporation of Mg and B. The films are smooth and highly crystalline, and the technique allows for virtually any heterostructure to be formed, including all-MgB2 tunnel junctions. Such devices have been characterized, with both quasiparticle and Josephson tunneling reported. MgB2 remains a material of great potential for a multitude of further characterization and exploration research projects and applications.
Effect of Mg doping in the gas-sensing performance of RF-sputtered ZnO thin films
Vinoth, E.; Gowrishankar, S.; Gopalakrishnan, N.
2018-06-01
Thin films of Mg-free and Mg-doped (3, 10 and 20 mol%) ZnO thin films have been deposited on Si (100) substrates by RF magnetron sputtering for gas-sensing application. Preferential orientation along (002) plane with hexagonal wurtzite structure has been observed in X-ray diffraction analysis. The conductivity, resistivity, and mobility of the deposited films have been measured by Hall effect measurement. The bandgap of the films has been calculated from the UV-Vis-NIR spectroscopy. It has been found that the bandgap was increased from 3.35 to 3.91 eV with Mg content in ZnO due to the radiative recombination of excitons. The change in morphology of the grown films has been investigated by scanning electron microscope. Gas-sensing measurements have been conducted for fabricated films. The sensor response, selectivity, and stability measurement were done for the fabricated films. Though better response was found towards ethanol, methanol, and ammonia for MZ2 (Mg at 10 mol%) film and maximum gas response was observed towards ammonia. The selectivity measurement reveals maximum sensitivity about 42% for ammonia. The low response time of 123 s and recovery time of 152 s towards ammonia were observed for MZ2 (Mg at 10 mol%). Stability of the Mg-doped ZnO thin film confirmed by the continuous sensing measurements for 4 months.
Energy Technology Data Exchange (ETDEWEB)
Lorusso, A. [Dipartimento di Matematica e Fisica “E. De Giorgi”, Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy); Gontad, F., E-mail: francisco.gontad@le.infn.it [Dipartimento di Matematica e Fisica “E. De Giorgi”, Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy); Solombrino, L. [Dipartimento di Matematica e Fisica “E. De Giorgi”, Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy); Chiadroni, E. [Laboratori Nazionali di Frascati, Istituto Nazionale di Fisica Nucleare, 00044 Frascati (Italy); Broitman, E. [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-58183 Linköping (Sweden); Perrone, A. [Dipartimento di Matematica e Fisica “E. De Giorgi”, Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy)
2016-11-11
In this work Magnesium (Mg) and Yttrium (Y) thin films have been deposited on Copper (Cu) polycrystalline substrates by the pulsed laser ablation technique for photocathode application. Such metallic materials are studied for their interesting photoemission properties and are proposed as a good alternative to the Cu photocathode, which is generally used in radio-frequency guns. Mg and Y films were uniform with no substantial differences in morphology; a polycrystalline structure was found for both of them. Photoemission measurements of such cathodes based on thin films were performed, revealing a quantum efficiency higher than Cu bulk. Photoemission theory according to the three-step model of Spicer is invoked to explain the superior photoemission performance of Mg with respect to Y. - Highlights: • Mg and Y thin film photocathodes were successfully prepared by pulsed laser deposition. • Mg quantum efficiency is higher than Y, despite its higher work function. • The three-step model of Spicer justify the difference in quantum efficiency.
International Nuclear Information System (INIS)
Le-Quoc, H.; Lacoste, A.; Hlil, E.K.; Bes, A.; Vinh, T. Tan; Fruchart, D.; Skryabina, N.
2011-01-01
Highlights: → Mg 2 Sn thin films deposited by plasma co-sputtering, on silicon and glass substrates. → Formation of nano-grained polycrystalline films on substrates at room temperature. → Structural properties vary with target biasing and target-substrate distance. → Formation of the hexagonal phase of Mg 2 Sn in certain deposition conditions. → Power factor ∼5.0 x 10 -3 W K -2 m -1 for stoichiometric Mg 2 Sn films doped with ∼1 at.% Ag. - Abstract: Magnesium stannide (Mg 2 Sn) thin films doped with Ag intended for thermoelectric applications are deposited on both silicon and glass substrates at room temperature by plasma assisted co-sputtering. Characterization by scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction confirms the formation of fine-grained polycrystalline thin films with thickness of 1-3 μm. Stoichiometry, microstructure and crystal structure of thin films are found to vary with target biasing and the distance from targets to substrate. Measurements of electrical resistivity and Seebeck coefficient at room temperature show the maximum power factor of ∼5.0 x 10 -3 W K -2 m -1 for stoichiometric Mg 2 Sn thin films doped with ∼1 at.% Ag.
Low-temperature atomic layer deposition of MgO thin films on Si
International Nuclear Information System (INIS)
Vangelista, S; Mantovan, R; Lamperti, A; Tallarida, G; Kutrzeba-Kotowska, B; Spiga, S; Fanciulli, M
2013-01-01
Magnesium oxide (MgO) films have been grown by atomic layer deposition in the wide deposition temperature window of 80–350 °C by using bis(cyclopentadienyl)magnesium and H 2 O precursors. MgO thin films are deposited on both HF-last Si(1 0 0) and SiO 2 /Si substrates at a constant growth rate of ∼0.12 nm cycle −1 . The structural, morphological and chemical properties of the synthesized MgO thin films are investigated by x-ray reflectivity, grazing incidence x-ray diffraction, time-of-flight secondary ion mass spectrometry and atomic force microscopy measurements. MgO layers are characterized by sharp interface with the substrate and limited surface roughness, besides good chemical uniformity and polycrystalline structure for thickness above 7 nm. C–V measurements performed on Al/MgO/Si MOS capacitors, with MgO in the 4.6–11 nm thickness range, allow determining a dielectric constant (κ) ∼ 11. Co layers are grown by chemical vapour deposition in direct contact with MgO without vacuum-break (base pressure 10 −5 –10 −6 Pa). The as-grown Co/MgO stacks show sharp interfaces and no elements interdiffusion among layers. C–V and I–V measurements have been conducted on Co/MgO/Si MOS capacitors. The dielectric properties of MgO are not influenced by the further process of Co deposition. (paper)
Characterization of Hf/Mg co-doped ZnO thin films after thermal treatments
Energy Technology Data Exchange (ETDEWEB)
Li, Chih-Hung; Chung, Hantsun [Graduate Institute of Applied Mechanics, National Taiwan University, Taipei 10617, Taiwan (China); Chen, Jian-Zhang, E-mail: jchen@ntu.edu.tw [Graduate Institute of Applied Mechanics, National Taiwan University, Taipei 10617, Taiwan (China); Cheng, I-Chun, E-mail: iccheng@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
2014-11-03
Rf-sputtered Mg{sub 0.05}Zn{sub 0.95}O thin films become amorphous/nanocrystalline with the addition of hafnium oxide. All films (thickness: ∼ 100 nm) sputter-deposited from Hf{sub x}Mg{sub 0.05}Zn{sub 0.95−x}O targets are highly transparent (> 80%) from 400 to 800 nm. The Tauc bandgap ΔE (eV) increases with the Hf content. However, the bandgap decreases after thermal treatment. The reduction in the bandgap is positively correlated with the Hf content and annealing temperature. The residual stresses of films sputtered from Mg{sub 0.05}Zn{sub 0.95}O and Hf{sub 0.025}Mg{sub 0.05}Zn{sub 0.925}O targets are determined based on X-ray diffraction (XRD) data using a bi-axial stress model. The residual stresses of as-deposited films are compressive. As the annealing temperature increases, the residual stresses are relaxed and even become tensile. The bandgap narrowing after thermal treatment is attributed to the stress relaxation that changes the repulsion between the oxygen 2p and zinc 4s bands. Slight grain growth may also result in bandgap reduction because bandgap modification caused by the quantum confinement effect becomes significant in amorphous/nanocrystalline materials. The amorphous thin films reveal good thermal stability after 600 °C annealing for up to 2 h, as evidenced by the XRD and transmission spectra. - Highlights: • Thin films are sputtered from Hf{sub x}Mg{sub 0.05}Zn{sub 0.95−x}O targets at room temperature. • Bandgap increases with Hf content but decreases with post-annealing temperature. • Bandgap narrowing after annealing partly results from the relaxation of stresses. • Bandgap narrowing partly results from quantum confinement effect by nanomaterials. • Hf doping increases resistivity due to the lattice disorder and enlarged bandgap.
Stabilization and enhanced energy gap by Mg doping in ɛ-phase Ga2O3 thin films
Bi, Xiaoyu; Wu, Zhenping; Huang, Yuanqi; Tang, Weihua
2018-02-01
Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE) technique. X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and ultraviolet-visible (UV-vis) absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ɛ-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ˜ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.
Laser-induced thermoelectric voltage in normal state MgB2 thin films
International Nuclear Information System (INIS)
Zhao Songqing; Zhou Yueliang; Zhao Kun; Wang Shufang; Chen Zhenghao; Jin Kuijuan; Lue Huibin; Cheng Bolin; Yang Guozhen
2006-01-01
Laser-induced voltage has been observed in c-axis oriented MgB 2 thin film at room temperature. The amplitude of the signal is approximately proportional to the film thickness. For the film with the thickness of 150 nm, a very fast response has been detected when the film was irradiated by a 308 nm pulsed laser of 20 ns duration. The rise time and full width at half-maximum of the signal are about 3 and 25 ns, respectively. The physical origin of the laser-induced voltage can be attributed to a transverse thermoelectricity due to the anisotropic thermopower in MgB 2
Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si
Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Zhu, Yihan; Alshareef, Husam N.; Kim, Moon J.; Gnade, Bruce E.
2016-01-01
We present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post
Energy Technology Data Exchange (ETDEWEB)
Gregor, M., E-mail: gregor@fmph.uniba.sk; Plecenik, T.; Sobota, R.; Brndiarova, J.; Roch, T.; Satrapinskyy, L.; Kus, P.; Plecenik, A.
2014-09-01
Highlights: • Superconducting MgB{sub 2} thin film were deposited by co-deposition using the thermal and e-beam evaporation. • Ex situ annealing process was done using various atmospheres. • Influence of annealing atmosphere and temperature on superconducting and structural properties were studied. • Possible mechanisms of the formation and crystallization of MgB{sub 2} thin film are discussed. - Abstract: Influence of an ex situ annealing temperature and atmosphere on chemical composition and structural and superconducting properties of MgB{sub 2} thin films deposited by vacuum evaporation has been investigated. The annealing has been done in Ar, N{sub 2} and Ar + 5%H{sub 2} atmospheres at pressure of 700 Pa and temperature varying from 700 to 800 °C. It has been shown that annealing in Ar and N{sub 2} atmosphere at 700–800 °C produces relatively thick MgO layer on the surface of the films, while creation of such layer is highly reduced if the annealing is done in reducing Ar + 5%H{sub 2} atmosphere. The XPS and XRD results suggest that the MgO layer prevents out-diffusion of Mg from the film during the annealing, what assures better stoichiometry of the films as well as creation of larger MgB{sub 2} grains. The films with the highest amount of MgO on the surface, annealed in nitrogen atmosphere, thus paradoxically exhibited the highest critical temperature of T{sub c0} = 34.8 K with very sharp transition width of 0.1 K.
Stabilization and enhanced energy gap by Mg doping in ε-phase Ga2O3 thin films
Directory of Open Access Journals (Sweden)
Xiaoyu Bi
2018-02-01
Full Text Available Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE technique. X-ray diffraction (XRD, x-ray photoelectron spectroscopy (XPS and ultraviolet-visible (UV-vis absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ε-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ∼ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.
Microstructure of epitaxial SrRuO 3 thin films on MgO substrates
Ai, Wan Yong; Zhu, Jun; Zhang, Ying; Li, Yan Rong; Liu, Xing Zhao; Wei, Xian Hua; Li, Jin Long; Zheng, Liang; Qin, Wen Feng; Liang, Zhu
2006-09-01
SrRuO 3 thin films have been grown on singular (1 0 0) MgO substrates using pulsed laser deposition (PLD) in 30 Pa oxygen ambient and at a temperature of 400-700 °C. Ex situ reflection high-energy electron diffraction (RHEED) as well as X-ray diffraction (XRD) θ/2 θ scan indicated that the films deposited above 650 °C were well crystallized though they had a rough surface as shown by atom force microscopy (AFM). XRD Φ scans revealed that these films were composed of all three different types of orientation domains, which was further confirmed by the RHEED patterns. The heteroepitaxial relationship between SrRuO 3 and MgO was found to be [1 1 0] SRO//[1 0 0] MgO and 45°-rotated cube-on-cube [0 0 1] SRO//[1 0 0] MgO. These domain structures and surface morphology are similar to that of ever-reported SrRuO 3 thin films deposited on the (0 0 1) LaAlO 3 substrates, and different from those deposited on (0 0 1) SrTiO 3 substrates that have an atomically flat surface and are composed of only the [1 1 0]-type domains. The reason for this difference was ascribed to the effect of lattice mismatch across the film/substrate interface. The room temperature resistivity of SrRuO 3 films fabricated at 700 °C was 300 μΩ cm. Therefore, epitaxial SrRuO 3 films on MgO substrate could serve as a promising candidate of electrode materials for the fabrication of ferroelectric or dielectric films.
International Nuclear Information System (INIS)
Balout, H.; Boulet, P.; Record, M.-C.
2015-01-01
The electronic structures and thermoelectric properties of a polycrystalline Mg 2 Si thin film have been investigated by first-principle density-functional theory (DFT) and Boltzmann transport theory calculations within the constant-relaxation time approximation. The polycrystalline thin film has been simulated by assembling three types of slabs each having the orientation (001), (110) or (111) with a thickness of about 18 Å. The effect of applying the relaxation procedure to the thin film induces disorder in the structure that has been ascertained by calculating radial distribution functions. For the calculations of the thermoelectric properties, the energy gap has been fixed at the experimental value of 0.74 eV. The thermoelectric properties, namely the Seebeck coefficient, the electrical conductivity and the power factor, have been determined at three temperatures of 350 K, 600 K and 900 K with respect to both the energy levels and the p-type and n-type doping levels. The best Seebeck coefficient is obtained at 350 K: the S yy component of the tensor amounts to about ±1000 μV K −1 , depending on the type of charge carriers. However, the electrical conductivity is much too small which results in low values of the figure of merit ZT. Structure–property relationship correlations based on directional radial distribution functions allow us to tentatively draw some explanations regarding the anisotropy of the electrical conductivity. Finally, the low ZT values obtained for the polycrystalline Mg 2 Si thin film are paralleled with those recently reported in the literature for bulk chalcogenide glasses. - Graphical abstract: Structure of the polycrystalline thin film of Mg 2 Si. - Author-Highlights: • Polycrystalline Mg 2 Si film has been modelled by DFT approach. • Thermoelectric properties have been evaluated by semi-classical Boltzmann theory. • The structure was found to be slightly disordered after relaxation. • The highest value of Seebeck
Saritaş, Sevda; Ceviz Sakar, Betul; Kundakci, Mutlu; Yildirim, Muhammet
2018-06-01
Iron oxide thin films have been obtained significant interest as a material that put forwards applications in photovoltaics, gas sensors, biosensors, optoelectronic and especially in spintronics. Iron oxide is one of the considerable interest due to its chemical and thermal stability. Metallic ion dopant influenced superexchange interactions and thus changed the structural, electrical and magnetic properties of the thin film. Mg dopped zinc ferrite (Mg:ZnxFe3-xO4) crystal was used to avoid the damage of Fe3O4 (magnetite) crystal instead of Zn2+ in this study. Because the radius of the Mg2+ ion in the A-site (tetrahedral) is almost equal to that of the replaced Fe3+ ion. Inverse-spinel structure in which oxygen ions (O2-) are arranged to form a face-centered cubic (FCC) lattice where there are two kinds of sublattices, namely, A-site and B-site (octahedral) interstitial sites and in which the super exchange interactions occur. In this study, to increase the saturation of magnetization (Ms) value for iron oxide, inverse-spinal ferrite materials have been prepared, in which the iron oxide was doped by multifarious divalent metallic elements including Zn and Mg. Triple and quaternary; iron oxide and zinc ferrite thin films with Mg metal dopants were grown by using Spray Pyrolysis (SP) technique. The structural, electrical and magnetic properties of Mg dopped iron oxide (Fe2O3) and zinc ferrite (ZnxFe3-xO4) thin films have been investigated. Vibrating Sample Magnetometer (VSM) technique was used to study for the magnetic properties. As a result, we can say that Mg dopped iron oxide thin film has huge diamagnetic and of Mg dopped zinc ferrite thin film has paramagnetic property at bigger magnetic field.
International Nuclear Information System (INIS)
Darok, X.; Rougier, A.; Bhat, V.; Aymard, L.; Dupont, L.; Laffont, L.; Tarascon, J.-M.
2006-01-01
Mg-Ni thin films were grown using Pulsed Laser Deposition. In situ optical changes from shiny metallic to transparent states were observed for films deposited in vacuum and under an Ar/H 2 gas mixture (93/7%), respectively. Optical changes were also achieved by ex situ hydrogenation under hydrogen gas pressure of 15 bars at 200 deg. C. However, after ex situ hydrogenation, the optical transmittance of the Mg-based hydrogenated thin films did not exceed 25%. Such limitation was attributed to oxygen contamination, as deduced by High Resolution Transmission Electron Microscopy observations, showing the co-existence of both Mg-based and MgO phases for as-deposited films. A significant decrease in oxygen contamination was successfully achieved with the addition of carbon, leading to the preparation of (Mg-based)-C x (x < 20%) thin films showing a faster and easier hydrogenation
Ultraviolet detecting properties of amorphous MgInO thin film phototransistors
International Nuclear Information System (INIS)
Lu, Huiling; Bi, Xiaobin; Zhang, Shengdong; Zhou, Hang
2015-01-01
The ultraviolet (UV) detecting properties of Mg doped In 2 O 3 (MgInO or MIO) bottom gate thin film transistors (TFTs) were investigated. The optical measurements show that the introduction of Mg dopants effectively widens the optical band gap of In 2 O 3 . The cutoff wavelength of MIO films is pushed to deep UV as Mg content increases. Fabricated MIO TFTs with high Mg content demonstrate appraisable UV detecting properties with a dark current of 10 −14 A, a UV to visible rejection ratio of 10 3 , a responsivity of 3.2 A/W (300 nm) and a cutoff wavelength of 320 nm, which can be put to good use in deep UV detection. The dynamic photo-response measurement shows that the persistent photo-conductivity (PPC) effect can be alleviated by imposing a transient positive gate pulse. (paper)
Structural and optical properties of magnetron sputtered Mg{sub x}Zn{sub 1-x}O thin films
Energy Technology Data Exchange (ETDEWEB)
Kumar, Sanjeev; Gupte, Vinay; Sreenivas, K [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)
2006-04-05
Mg{sub x}Zn{sub 1-x}O (MZO) thin films prepared by an rf magnetron sputtering technique are reported. The films were grown at room temperature and at relatively low rf power of 50 W. MZO thin films were found to possess preferred c-axis orientation and exhibited hexagonal wurtzite structure of ZnO up to a Mg concentration of 42 mol%. A small variation in the c-axis lattice parameter of around 0.3% was observed with increasing Mg composition, showing the complete solubility of Mg in ZnO. The band gap of the MZO films in the wurtzite phase varied linearly with the Mg concentration and a maximum band gap {approx}4.19 eV was achieved at x = 0.42. The refractive indices of the MgO films were found to decrease with increasing Mg content. The observed optical dispersion data are in agreement with the single oscillator model. A photoluminescence study revealed a blue shift in the near band edge emission peak with increasing Mg content in the MZO films. The results show the potential of MZO films in various opto-electronic applications.
Scaling behavior of mixed-state hall effect in MgB2 thin films
International Nuclear Information System (INIS)
Jung, Soon-Gil; Seong, W.K.; Kang, W.N.; Choi, Eun-Mi; Kim, Heon-Jung; Lee, Sung-Ik; Kim, Hyeong-Jin; Kim, H.C.
2006-01-01
The Hall resistivity (ρ xy ) and the longitudinal resistivity (ρ xx ) in c-axis-oriented superconducting MgB 2 thin films have been investigated in extended fields up to 18T. We have observed a scaling behavior between the Hall resistivity and the longitudinal resistivity, ρ xy =Aρ xx β , where the exponent (β) is observed to be independent of the temperatures and the magnetic fields. For a wide magnetic field region from 1 to 18T and a wide temperature region from 10 to 28K, a universal power law with β=2.0+/-0.1 was observed in c-axis-oriented MgB 2 thin films. These results can be well interpreted by using recent models
Magnetic anisotropy of thin sputtered MgB2 films on MgO substrates in high magnetic fields
Directory of Open Access Journals (Sweden)
Savio Fabretti
2014-03-01
Full Text Available We investigated the magnetic anisotropy ratio of thin sputtered polycrystalline MgB2 films on MgO substrates. Using high magnetic field measurements, we estimated an anisotropy ratio of 1.35 for T = 0 K with an upper critical field of 31.74 T in the parallel case and 23.5 T in the perpendicular case. Direct measurements of a magnetic-field sweep at 4.2 K show a linear behavior, confirmed by a linear fit for magnetic fields perpendicular to the film plane. Furthermore, we observed a change of up to 12% of the anisotropy ratio in dependence of the film thickness.
Laser damage studies on MgF2 thin films
International Nuclear Information System (INIS)
Protopapa, Maria Lucia; De Tomasi, Ferdinando; Perrone, Maria Rita; Piegari, Angela; Masetti, Enrico; Ristau, Detlev; Quesnel, Etienne; Duparre, Angela
2001-01-01
The results of laser damage studies performed at 248 nm (KrF excimer laser) on MgF 2 thin films deposited by different techniques (electron-beam evaporation, thermal boat evaporation, and ion-beam sputtering) on fused silica and CaF 2 substrates are presented. We find that the films deposited on CaF 2 substrates by the electron-beam evaporation technique present the highest damage threshold fluence (9 J/cm2). The photoacoustic (PA) beam deflection technique was employed, in addition to microscopical inspection, to determine laser damage fluences. We confirm, by scanning electron microscopy analysis of the damaged spots, the capability of the PA technique to provide information on the mechanisms leading to damage. The dependence of both laser damage fluence and damage morphology on the film deposition technique, as well as on the film substrate, is discussed
Epitaxial Growth of Permalloy Thin Films on MgO Single-Crystal Substrates
International Nuclear Information System (INIS)
Ohtake, Mitsuru; Tanaka, Takahiro; Matsubara, Katsuki; Futamoto, Masaaki; Kirino, Fumiyoshi
2011-01-01
Permalloy (Py: Ni - 20 at. % Fe) thin films were prepared on MgO single-crystal substrates of (100), (110), and (111) orientations by molecular beam epitaxy. Py crystals consisting of fcc(100) and hcp(112-bar 0) orientations epitaxially nucleate on MgO(100) substrates. With increasing the substrate temperature, the volume ratio of fcc(100) to hcp(112-bar 0) crystal increases. The metastable hcp(112-bar 0) structure transforms into more stable fcc(110) structure with increasing the film thickness. Py(110) fcc single-crystal films are obtained on MgO(110) substrates, whereas Py films epitaxially grow on MgO(111) substrates with two types of fcc(111) variants whose orientations are rotated around the film normal by 180 deg. each other. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of these fcc-Py films agree within ±0.4% with the values of bulk fcc-Py crystal, suggesting that the strains in the films are very small. High-resolution transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the films around the Py/MgO(100) and the Py/MgO(110) interfaces to reduce the lattice mismatches. The magnetic properties are considered to be reflecting the magnetocrystalline anisotropies of bulk fcc-Py and/or metastable hcp-Py crystals and the shape anisotropy caused by the surface undulations.
Epitaxial Growth of Permalloy Thin Films on MgO Single-Crystal Substrates
Energy Technology Data Exchange (ETDEWEB)
Ohtake, Mitsuru; Tanaka, Takahiro; Matsubara, Katsuki; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi, E-mail: ohtake@futamoto.elect.chuo-u.ac.jp [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan)
2011-07-06
Permalloy (Py: Ni - 20 at. % Fe) thin films were prepared on MgO single-crystal substrates of (100), (110), and (111) orientations by molecular beam epitaxy. Py crystals consisting of fcc(100) and hcp(112-bar 0) orientations epitaxially nucleate on MgO(100) substrates. With increasing the substrate temperature, the volume ratio of fcc(100) to hcp(112-bar 0) crystal increases. The metastable hcp(112-bar 0) structure transforms into more stable fcc(110) structure with increasing the film thickness. Py(110){sub fcc} single-crystal films are obtained on MgO(110) substrates, whereas Py films epitaxially grow on MgO(111) substrates with two types of fcc(111) variants whose orientations are rotated around the film normal by 180 deg. each other. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of these fcc-Py films agree within {+-}0.4% with the values of bulk fcc-Py crystal, suggesting that the strains in the films are very small. High-resolution transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the films around the Py/MgO(100) and the Py/MgO(110) interfaces to reduce the lattice mismatches. The magnetic properties are considered to be reflecting the magnetocrystalline anisotropies of bulk fcc-Py and/or metastable hcp-Py crystals and the shape anisotropy caused by the surface undulations.
Crystallinity and superconductivity of as-grown MgB2 thin films with AlN buffer layers
International Nuclear Information System (INIS)
Tsujimoto, K.; Shimakage, H.; Wang, Z.; Kaya, N.
2005-01-01
The effects of aluminum nitride (AlN) buffer layers on the superconducting properties of MgB 2 thin film were investigated. The AlN buffer layers and as-grown MgB 2 thin films were deposited in situ using the multiple-target sputtering system. The best depositing condition for the AlN/MgB 2 bi-layer occurred when the AlN was deposited on c-cut sapphire substrates at 290 deg. C. The crystallinity of the AlN/MgB 2 bi-layer was studied using the XRD φ-scan and it showed that AlN and MgB 2 had the same in-plane alignment rotated at an angle of 30 deg. as compared to c-cut sapphire. The critical temperature of the MgB 2 film was 29.8 K and the resistivity was 50.0 μΩ cm at 40 K
Pinning enhancement in MgB2 superconducting thin films by ...
Indian Academy of Sciences (India)
The magnetic field dependence of the critical current density Jc was calculated from the M–H loops and magnetic field dependence of ... MgB2 thin film; Fe2O3 nanoparticles; critical current density; r-plane Al2O3 substrate. 1. Introduction. The discovery of ... It was thought that from these cal- culations, one can choose an ...
Morphology evolution of thin Ni film on MgO(100) substrate
International Nuclear Information System (INIS)
Lin, C.; Xu, Y.H.; Naramoto, H.; Wei, P.; Kitazawa, S.; Narumi, K.
2002-01-01
Thin Ni films with various thicknesses were deposited onto the MgO(100) single crystal substrate at 400 deg. C. The morphology measured by atomic force microscope shows an apparent correlation with the thickness. The initial 10 A film is composed of small round Ni islands. In the 25 A film, pinholes with narrow size distribution occur, which show local periodic distribution in some regions when the thickness of the film reaches 75 A. The driving force for such a structure is attributed to the elastic strain energy. When the film is about 100 A thick, the pinholes begin to disappear, due to filling by the late-coming atoms and covering of upper islands. (author)
Structural study of Mg doped cobalt ferrite thin films on ITO coated glass substrate
Suthar, Mahesh; Bapna, Komal; Kumar, Kishor; Ahuja, B. L.
2018-05-01
We have synthesized thin films of Co1-xMgxFe2O4 (x = 0, 0.4, 0.6, 0.8, 1) on transparent conducting indium tin oxide (ITO) coated glass substrate by pulsed laser deposition method. The structural properties of the grown films were analyzed by the X-ray diffraction and Raman spectroscopy, which suggest the single phase growth of these films. Raman spectra revealed the incorporation of Mg ions into CoFe2O4 lattice and suggest that the Mg ions initially go both to the octahedral and tetrahedral sites upto a certain concentration. For higher concentration, Mg ions prefer to occupy the tetrahedral sites.
Eijt, S. W. H.; Kind, R.; Singh, S.; Schut, H.; Legerstee, W. J.; Hendrikx, R. W. A.; Svetchnikov, V. L.; Westerwaal, R. J.; Dam, B.
2009-02-01
We report positron depth-profiling studies on the hydrogen sorption behavior and phase evolution of Mg-based thin films. We show that the main changes in the depth profiles resulting from the hydrogenation to the respective metal hydrides are related to a clear broadening in the observed electron momentum densities in both Mg and Mg2Ni films. This shows that positron annihilation methods are capable of monitoring these metal-to-insulator transitions, which form the basis for important applications of these types of films in switchable mirror devices and hydrogen sensors in a depth-sensitive manner. Besides, some of the positrons trap at the boundaries of columnar grains in the otherwise nearly vacancy-free Mg films. The combination of positron annihilation and x-ray diffraction further shows that hydrogen loading at elevated temperatures, in the range of 480-600 K, leads to a clear Pd-Mg alloy formation of the Pd catalyst cap layer. At the highest temperatures, the hydrogenation induces a partial delamination of the ˜5 nm thin capping layer, as sensitively monitored by positron depth profiling of the fraction of ortho-positronium formed at interface with the cap layer. The delamination effectively blocks the hydrogen cycling. In Mg-Si bilayers, we investigated the reactivity upon hydrogen loading and heat treatments near 480 K, which shows that Mg2Si formation is fast relative to MgH2. The combination of positron depth profiling and transmission electron microscopy shows that hydrogenation promotes a complete conversion to Mg2Si for this destabilized metal hydride system, while a partially unreacted, Mg-rich amorphous prelayer remains on top of Mg2Si after a single heat treatment in an inert gas environment. Thin film studies indicate that the difficulty of rehydrogenation of Mg2Si is not primarily the result from slow hydrogen dissociation at surfaces, but is likely hindered by the presence of a barrier for removal of Mg from the readily formed Mg2Si.
Growth and hydrogenation of ultra-thin Mg films on Mo(111)
DEFF Research Database (Denmark)
Ostenfeld, Christopher Worsøe; Davies, Jonathan Conrad; Vegge, Tejs
2005-01-01
. Hydrogen cannot be adsorbed on magnesium films under UHV conditions. However, when evaporating Mg in a hydrogen background, a hydrogen overlayer is seen to adsorb at the Mg surface, due to the catalytic interaction with the Mo(1 1 1) substrate and subsequent spill-over. We show that two monolayers of Mg......The growth and hydrogenation of ultra-thin magnesium overlayers have been investigated on a Mo(1 1 1) single crystal substrate. For increasing magnesium coverages we observe intermediate stages in the TPD and LEISS profiles, which illustrate the transition from one monolayer to multilayer growth...
Thickness Dependent Optical Properties of Sol-gel based MgF2 – TiO2 Thin Films
Directory of Open Access Journals (Sweden)
Siddarth Krishnaraja Achar
2018-04-01
Full Text Available MgF2 – TiO2 thin films were prepared by cost effective solgel technique onto glass substrates and optical parameters were determined by envelope technique. Thin films were characterized by optical transmission spectroscopy in the spectral range 290 – 1000 nm. The refractive index, extinction coefficient, Optical thickness and band gap dependency on thickness were evaluated. Thickness dependency of thin films showed direct allowed transition with band gap of 3.66 to 3.73 eV.
MgB2 thin films on silicon nitride substrates prepared by an in situ method
International Nuclear Information System (INIS)
Monticone, Eugenio; Gandini, Claudio; Portesi, Chiara; Rajteri, Mauro; Bodoardo, Silvia; Penazzi, Nerino; Dellarocca, Valeria; Gonnelli, Renato S
2004-01-01
Large-area MgB 2 thin films were deposited on silicon nitride and sapphire substrates by co-deposition of Mg and B. After a post-annealing in Ar atmosphere at temperatures between 773 and 1173 K depending on the substrate, the films showed a critical temperature higher than 35 K with a transition width less than 0.5 K. The x-ray diffraction pattern suggested a c-axis preferential orientation in films deposited on amorphous substrate. The smooth surface and the good structural properties of these MgB 2 films allowed their reproducible patterning by a standard photolithographic process down to dimensions of the order of 10 μm and without a considerable degradation of the superconducting properties
Scanning tunneling spectroscopy on neutron irradiated MgB2 thin films
International Nuclear Information System (INIS)
Di Capua, Roberto; Salluzzo, Marco; Vaglio, Ruggero; Ferdeghini, Carlo; Ferrando, Valeria; Putti, Marina; Xi Xiaoxing; Aebersold, Hans U.
2007-01-01
Neutron irradiation was performed on MgB 2 thin films grown by hybrid physical chemical vapor deposition. Samples irradiated with different neutron fluences, having different critical temperatures, were studied by scanning tunneling spectroscopy in order to investigate the effect of the introduced disorder on the superconducting and spectroscopic properties. A monotonic increase of the π gap with increasing disorder was found
Structural and optical analysis of ZnBeMgO powder and thin films
International Nuclear Information System (INIS)
Panwar, Neeraj; Liriano, J.; Katiyar, Ram S.
2011-01-01
Research highlights: → Structural and optical studies of Zn 1-x-y Be x Mg y O (0 ≤ x ≤0.10; 0 ≤ y ≤ 0.20) powders and thin films. → Raman studies of the pure ZnO powder showed all the characteristic peaks of the wurtzite hexagonal structure and with (Be, Mg) co-doping new modes appeared which can be attributed to arise as a result of doping effect. → The XRD of the films prepared from the powders using pulsed laser deposition (PLD) technique exhibited the preferential orientation and with doping the (0 0 0 2) peak also shifts to higher 2θ values suggesting the incorporation of Be/Mg at the Zn-site. → From the UV-visible optical band gap measurement it was noticed that the band gap of the pristine ZnO film is 3.3 eV which enhanced up to 4.51 eV for Zn 0.7 Be 0.1 Mg 0.2 O film which lies in the solar blind region and is very useful for the deep UV detection. - Abstract: We here report the structural and optical studies of Zn 1-x-y Be x Mg y O (0 ≤ x ≤ 0.15; 0 ≤ y ≤ 0.20) powders and thin films. From the Rietveld refinement of the powder X-ray diffraction (XRD) patterns it was revealed that the value of 'a' lattice parameter remains almost unchanged whereas 'c' parameter reduces with Be and Mg co-doping in ZnO. The Zn-O bond length also decreases in co-doped samples. Raman studies of the pure ZnO powder showed all the characteristic peaks of the wurtzite hexagonal structure and with (Be, Mg) co-doping new modes appeared which can be attributed to arise as a result of substitution. The XRD of the films prepared from the powders using pulsed laser deposition (PLD) technique exhibited the preferential orientation and with increase in co-doping the (0 0 0 2) peak also shifts to higher 2θ values suggesting the incorporation of Be/Mg at the Zn-site. From the UV-visible optical transmittance measurement it was noticed that the band gap of the pristine ZnO film is 3.3 eV which enhanced up to 4.51 eV for Zn 0.7 Be 0.1 Mg 0.2 O film which lies in the
Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications
Giri, Pushpa; Chakrabarti, P.
2016-05-01
Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.
Direct observations of grain boundary phenomena during indentation of Al and Al-Mg thin films
Soer, WA; De Hosson, JTM; Minor, AM; Stach, EA; Morris, Joan K.; Corcoran, SG; Joo, YC; Moody, NR; Suo, Z
2004-01-01
The deformation behaviour of Al and Al-Mg thin films has been studied with the unique experimental approach of in-situ nanoindentation in a transmission electron microscope. This paper concentrates on the role of solute Mg additions in the transfer of plasticity across grain boundaries. The
The effects of Fe2O3 nanoparticles on MgB2 superconducting thin films
International Nuclear Information System (INIS)
Koparan, E.T.; Sidorenko, A.; Yanmaz, E.
2013-01-01
Full text: Since the discovery of superconductivity in binary MgB 2 compounds, extensive studies have been carried out because of its excellent properties for technological applications, such as high transition temperature (T c = 39 K), high upper critical field (H c2 ), high critical current density (J c ). Thin films are important for fundamental research as well as technological applications of any functional materials. Technological applications primarily depend on critical current density. The strong field dependence of J c for MgB 2 necessitates an enhancement in flux pinning performance in order to improve values in high magnetic fields. An effective way to improve the flux pinning is to introduce flux pinning centers into MgB 2 through a dopant having size comparable to the coherence length of MgB 2 . In this study, MgB 2 film with a thickness of about 600 nm was deposited on the MgO (100) single crystal substrate using a 'two-step' synthesis technique. Firstly, deposition of boron thin film was carried out by rf magnetron sputtering on MgO substrates and followed by a post deposition annealing at 850 degrees Celsius in magnesium vapour. In order to investigate the effect of Fe 2 O 3 nanoparticles on the structural and magnetic properties of films, MgB 2 films were coated with different concentrations of Fe 2 O 3 nanoparticles by a spin coating process. The effects of different concentrations of ferromagnetic Fe 2 O 3 nanoparticles on superconducting properties of obtained films were carried out by using structural (XRD, SEM, AFM), electrical (R-T) and magnetization (M-H, M-T and AC Susceptibility) measurements. It was calculated that anisotropic coefficient was about γ = 1.2 and coherence length of 5 nm for the uncoated film. As a result of coherence length, the appropriate diameters of Fe 2 O 3 nanoparticles were found to be 10 nm, indicating that these nanoparticles served as the pinning centers. Based on the data obtained from this study, it can be
Kim, S G
1999-01-01
MgO thin films were deposited on SiO sub 2 (100) substrates by using electrostatic spray pyrolysis and Mg(tmhd) sub 2 as the precursor. The growth rates of the films varyed from 34 to 87 A/min and were measured for various substrate and guide temperatures. X-ray diffraction analysis provide evidence that the MgO films deposited at temperatures as low as 400 approx 500 .deg. C had preferred orientation to (100) plane perpendicular to the substrate surface. X-ray photoelectron spectroscopy and Auger electron spectroscopy data indicated that there were few organics incorporated in the films.
International Nuclear Information System (INIS)
Bazhan, Z.; Ghodsi, F.E.; Mazloom, J.
2017-01-01
Highlights: •Electrochemical properties of spinel PEG/PVP MgFe 2 O 4 thin films prepared by spin coating technique have been investigated. •PSD analysis indicated that spectral roughness of films decreased by polymer incorporation. •Optical calculations exhibited a blue shift on optical band gap by polymer addition. •CV curves revealed that ion storage capacitance of PEG/MgFe 2 O 4 is two times higher than MgFe 2 O 4 thin films. •EIS analysis confirmed that incorporation of appropriate amount of PEG reduced the charge transfer resistance. -- Abstract: The effect of polyethylene glycol (PEG) and polyvinylpyrrolidone (PVP) on physical properties of sol-gel prepared magnesium ferrite (MF) thin films was investigated. The X-ray diffraction (XRD) results showed the formation of cubic spinel magnesium ferrite for all samples. The surface morphology of films changed and average surface roughness decreased by polymer addition. The height-height correlation function and fractal dimension were evaluated using cube counting and triangulation methods from atomic force microscopy (AFM) images. The refractive index and extinction coefficient of MF thin films decreased by adding polymer while the band gap value increased from 2.24 to 2.72 eV. The PEG addition enhanced the electrochemical performance while PVP addition didn’t have significant effect on cyclic voltammetry (CV) of magnesium ferrite thin films. The sample with highest value of PEG showed the maximum specific capacitance (68.5 mF cm −2 ) and the smallest charge transfer resistance (565 Ω) among all samples.
Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si
Zhang, Bo
2016-12-28
We present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post-annealing temperatures were studied to determine the thermal stability of each contact metal. The specific contact resistivity (SCR) was determined using the Cross Bridge Kelvin Resistor (CBKR) method. Ni contacts exhibits the best thermal stability, maintaining stability up to 400 °C, with a SCR of approximately 10−2 Ω-cm2 after annealing. The increased SCR after high temperature annealing is correlated with the formation of a Mg-Si-Ni mixture identified by cross-sectional scanning transmission electron microscopy (STEM) characterization, X-ray diffraction characterization (XRD) and other elemental analyses. The formation of this Mg-Si-Ni mixture is attributed to Ni diffusion and its reaction with the Mg2Si film.
Scanning tunneling spectroscopy on neutron irradiated MgB{sub 2} thin films
Energy Technology Data Exchange (ETDEWEB)
Di Capua, Roberto [University of Napoli and CNR-INFM/Coherentia, Via Cinthia, Naples I-80126 (Italy)], E-mail: rdicapua@na.infn.it; Salluzzo, Marco; Vaglio, Ruggero [University of Napoli and CNR-INFM/Coherentia, Via Cinthia, Naples I-80126 (Italy); Ferdeghini, Carlo [CNR-INFM/LAMIA, Via Dodecaneso 33, Genova I-16146 (Italy); Ferrando, Valeria [CNR-INFM/LAMIA, Via Dodecaneso 33, Genova I-16146 (Italy); Pennsylvania State University, University Park, PA 16802 (United States); Putti, Marina [CNR-INFM/LAMIA, Via Dodecaneso 33, Genova I-16146 (Italy); Xi Xiaoxing [Pennsylvania State University, University Park, PA 16802 (United States); Aebersold, Hans U. [Paul Scherrer Institut, Villigen CH-5232 (Switzerland)
2007-09-01
Neutron irradiation was performed on MgB{sub 2} thin films grown by hybrid physical chemical vapor deposition. Samples irradiated with different neutron fluences, having different critical temperatures, were studied by scanning tunneling spectroscopy in order to investigate the effect of the introduced disorder on the superconducting and spectroscopic properties. A monotonic increase of the {pi} gap with increasing disorder was found.
Adsorption properties of Mg-Al layered double hydroxides thin films grown by laser based techniques
Energy Technology Data Exchange (ETDEWEB)
Matei, A., E-mail: andreeapurice@nipne.ro [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest, Magurele (Romania); Birjega, R.; Vlad, A.; Filipescu, M.; Nedelcea, A.; Luculescu, C. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest, Magurele (Romania); Zavoianu, R.; Pavel, O.D. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania); Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest, Magurele (Romania)
2012-09-15
Highlights: Black-Right-Pointing-Pointer Laser techniques MAPLE and PLD can successfully be used to produce LDHs thin films. Black-Right-Pointing-Pointer Hydration treatments of the PLD and MAPLE deposited films lead to the LDH reconstruction effect. Black-Right-Pointing-Pointer The Ni retention from aqueous solution occurs in the films via a dissolution-reconstruction mechanism. Black-Right-Pointing-Pointer The films are suitable for applications in remediation of contaminated drinking water or waste waters. - Abstract: Powdered layered double hydroxides (LDHs) have been widely studied due to their applications as catalysts, anionic exchangers or host materials for inorganic and/or organic molecules. Assembling nano-sized LDHs onto flat solid substrates forming thin films is an expanding area of research due to the prospects of novel applications as sensors, corrosion-resistant coatings, components in optical and magnetic devices. Continuous and adherent thin films were grown by laser techniques (pulsed laser deposition - PLD and matrix assisted pulsed laser evaporation - MAPLE) starting from targets of Mg-Al LDHs. The capacity of the grown thin films to retain a metal (Ni) from contaminated water has been also explored. The thin films were immersed in an Ni(NO{sub 3}){sub 2} aqueous solutions with Ni concentrations of 10{sup -3}% (w/w) (1 g/L) and 10{sup -4}% (w/w) (0.1 g/L), respectively. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) combined with energy dispersive X-ray analysis (EDX) were the techniques used to characterize the prepared materials.
Formation of nano-sized pinholes array in thin Ni film on MgO(100) substrate
Energy Technology Data Exchange (ETDEWEB)
Lin Chuan; Naramoto, Hiroshi; Xu Yonghua; Kitazawa, Sin-iti; Narumi, Kazumasa; Sakai, Seiji
2003-10-22
We have grown thin Ni films with various thicknesses on polished MgO(100) single crystal substrates in an e-gun evaporation system. The morphology of the as-deposited films was characterized with atomic force microscopy. Pinholes with average diameter of 5-10 nm are found in the film with thickness from 1 to 15 nm, and pinholes array was observed in the film 10 nm thick. The origin of such structure formation is discussed in terms of the elastic strain energy.
Enhancement of the critical current density in FeO-coated MgB2 thin films at high magnetic fields
Directory of Open Access Journals (Sweden)
Andrei E. Surdu
2011-12-01
Full Text Available The effect of depositing FeO nanoparticles with a diameter of 10 nm onto the surface of MgB2 thin films on the critical current density was studied in comparison with the case of uncoated MgB2 thin films. We calculated the superconducting critical current densities (Jc from the magnetization hysteresis (M–H curves for both sets of samples and found that the Jc value of FeO-coated films is higher at all fields and temperatures than the Jc value for uncoated films, and that it decreases to ~105 A/cm2 at B = 1 T and T = 20 K and remains approximately constant at higher fields up to 7 T.
Energy Technology Data Exchange (ETDEWEB)
Fritzsche, H.; Poirier, E. [National Research Council of Canada, Chalk River, ON (Canada). Canadian Neutron Beam Centre; Haagsma, J.; Ophus, C.; Luber, E.; Harrower, C.T.; Mitlin, D. [Alberta Univ., Edmonton, AB (Canada). Dept. of Chemical and Materials Engineering; National Research Council of Canada, Edmonton, AB (Canada). National Inst. for Nanotechnology
2010-10-15
Various methods for storing hydrogen have been examined in an effort to find ways to store hydrogen in increasingly smaller volumes with decreasing weight of the whole hydrogen storage system. Metal hydrides, in which hydrogen is chemically bound to a metal atom, are considered to be very promising candidates for hydrogen storage because they have high gravimetric and volumetric storage capacities. This study investigated the effect of different magnesium (Mg) and aluminium (Al) ratios on the absorption and desorption properties of thin films. Neutron reflectometry (NR) was used in this study to better understand the absorption and desorption properties of commercially promising hydrogen storage materials. The large negative scattering length of hydrogen atoms changes the reflectivity curve substantially, so that NR can determine the total amount of stored hydrogen as well as the hydrogen distribution along the film normal, with nanometer resolution. In order to use NR, the samples must have smooth surfaces, and the film thickness should range between 10 and 200 nm. Thin Mg{sub 1-x}Al{sub x} alloy films (x = 0.2, 0.3, 0.4, 0.67) capped with a palladium (Pd) catalyst layer were used in this study. The NR experiments revealed that Mg{sub 0.7}Al{sub 0.3} is the optimum composition for this binary alloy system, with the highest amount of stored hydrogen and the lowest desorption temperature. All the thin films expanded by approximately 20 percent due to hydrogen absorption. The hydrogen was stored only in the MgAl layer without any hydrogen in the Pd layer. It was concluded that NR can be used to effectively determine the hydrogen profile in thin MgAl films. 29 refs., 5 figs.
Orthorhombic polar Nd-doped BiFeO3 thin film on MgO substrate
International Nuclear Information System (INIS)
Leontyev, I N; Janolin, P-E; Dkhil, B; Yuzyuk, Yu I; El-Marssi, M; Chernyshov, D; Dmitriev, V; Golovko, Yu I; Mukhortov, V M
2011-01-01
A Nd-doped BiFeO 3 thin film deposited on MgO substrate was studied by synchrotron diffraction. The ferroelectric nature of the film is proven by in-plane remanent polarization measurement. The highest possible symmetry of the film is determined to be orthorhombic, within the Fm2m space group. Such a structure is rotated by 45 0 with respect to the substrate and is consistent with tilts of oxygen octahedra doubling the unit cell. This polar structure presents a rather unusual strain-accommodation mechanism. (fast track communication)
Rutherford Backscattering and Channeling Studies of Al and Mg Diffusion in Iron Oxide Thin Films
International Nuclear Information System (INIS)
Thevuthasan, Theva; McCready, David E.; Jiang, Weilin; Mcdaniel, Emily P.; Yi, Sang I.; Chambers, Scott A.; J.L. Duggan and I.L. Morgan
1999-01-01
Thin films of alpha-Fe2O3(0001) (hermatite) and gamma-Fe2O3 (001) (maghemite) were epitaxially grown on Al2O3(0001) substrates, respectively, using the new molecular beam epitaxy (MBE) system at the Environmental Molecular Sciences Laboratory (EMSL). We have investigated the crystalline quality of these films using Rutherford Backscattering (RBS) and channeling experiments. Minimum yields obtained from aligned and random spectra are 2.7+-0.3% for the alpha-Fe2o3(0001) film and 14.5+-0.6% for the gamma-Fe2O3 (001) film. Al and Mg outdiffusion into the hematite and maghemite films were observed at higher temperatures. Indiffusion of Fe atoms from the film into the substrate was observed for the gamma-Fe2o3(001)/MgO(001) system. In contrast, no Fe indiffusion was observed for the sapphire substrate
Energy Technology Data Exchange (ETDEWEB)
Li, Zhao-Hui [Department of Electronics Engineering, Gachon University, Soojung-gu, Seongnam city 461-701, Gyunggi-do (Korea, Republic of); Center for Photovoltaic and Solar Energy, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen city 518055 (China); Cho, Eou-Sik [Department of Electronics Engineering, Gachon University, Soojung-gu, Seongnam city 461-701, Gyunggi-do (Korea, Republic of); Kwon, Sang Jik, E-mail: sjkwon@gachon.ac.kr [Department of Electronics Engineering, Gachon University, Soojung-gu, Seongnam city 461-701, Gyunggi-do (Korea, Republic of)
2014-09-30
Highlights: • Mg-doped ZnO film as CIGS buffer was prepared by ALD process. • The grain size of ZnO-like hexagonal phase decreased with Mg content. • The transmittance and crystallinity increased but the band gap decreased with temperature. - Abstract: Mg-doped ZnO [(Zn, Mg)O] thin films were prepared by atomic layer chemical vapor deposition (ALCVD) process with different Mg content, using diethyl zinc, biscyclopentadienyl magnesium, and water as the metal and oxygen sources, respectively. The ratio of Mg to Zn was varied by changing the pulse ratio of MgCp{sub 2} to DEZn precursor to study its effect on the properties of (Zn, Mg)O thin films. From the experimental results, it was shown that the grain size of the ZnO-like hexagonal phase (Zn, Mg)O decreased as the Mg content increased. But the transmittance and optical band gap of (Zn, Mg)O films increased with the increase of the Mg content. In addition, the effect of the substrate temperature on the properties of (Zn, Mg)O films was also investigated. The deposition rate, transmittance, and crystallinity of (Zn, Mg)O films increased as the substrate temperature increased. But its band gap decreased slightly with the increase of substrate temperature.
International Nuclear Information System (INIS)
Poirier, Eric; Harrower, Chris T.; Kalisvaart, Peter; Bird, Adam; Teichert, Anke; Wallacher, Dirk; Grimm, Nico; Steitz, Roland; Mitlin, David; Fritzsche, Helmut
2011-01-01
Highlights: → Mg 70 Al 30 thin films studied for hydrogen absorption using in situ neutron reflectometry. → Films with Ta/Pd, Ti/Pd and Ni/Pd bilayer catalysts systematically compared. → Measurements reveals deuterium spillover from the catalysts to the MgAl phase. → The use of Ti-Pd bilayer offers best results in terms of amount absorbed and kinetics. → Key results cross-checked with X-ray reflectometry. - Abstract: We present a neutron reflectometry study of deuterium absorption in thin films of Al-containing Mg alloys capped with a Ta/Pd, Ni/Pd and Ti/Pd-catalyst bilayer. The measurements were performed at room temperature over the 0-1 bar pressure range under quasi-equilibrium conditions. The modeling of the measurements provided a nanoscale representation of the deuterium profile in the layers at different stages of the absorption process. The absorption mechanism observed was found to involve spillover of atomic deuterium from the catalyst layer to the Mg alloy phase, followed by the deuteration of the Mg alloy. Complete deuteration of the Mg alloy occurs in a pressure range between 100 and 500 mbar, dependent on the type of bilayer catalyst. The use of a Ti/Pd bilayer catalyst yielded the best results in terms of both storage density and kinetic properties.
Energy Technology Data Exchange (ETDEWEB)
Chebil, W., E-mail: chbil.widad@live.fr [Unité de Service Commun de Recherche « High resolution X-ray diffractometer », Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019, Monastir (Tunisia); Laboratoire Physico-chimie des Matériaux, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l' environnement, 5019 Monastir (Tunisia); Boukadhaba, M.A. [Unité de Service Commun de Recherche « High resolution X-ray diffractometer », Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019, Monastir (Tunisia); Laboratoire Physico-chimie des Matériaux, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l' environnement, 5019 Monastir (Tunisia); Madhi, I. [Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050, Hammam-Lif (Tunisia); and others
2017-01-15
In this present work, ZnO and ZnMgO thin films prepared by a sol-gel process were deposited on glass substrates via spin coating technique. The structural, morphological and optical properties of the obtained films were investigated. X-ray diffraction study revealed that all layers exhibit a hexagonal wurtzite structure without any secondary phase segregation. The atomic force microscopy (AFM) depicts that the grains size of ours samples decreases as magnesium content increases. The absorption spectra obtained on ZnMgO thin films show a band gap tuning from 3.19 to 3.36 eV, which is also consistent with blue shifting of near-band edge PL emission, measured at low temperature. The incorporated amount of magnesium was calculated and confirmed by EDX. The gas sensing performances were tested in air containing NO{sub 2} for different operating temperatures. The experimental result exhibited that ZnMgO sensors shows a faster response and recovery time than the ZnO thin films. The resistivity and the sensor response as function of Mg content were also investigated.
Annealing effect of thermal spike in MgO thin film prepared by cathodic vacuum arc deposition
Energy Technology Data Exchange (ETDEWEB)
Zhu, Daoyun, E-mail: zhudy@gdut.edu.cn [Experiment Teaching Department, Guangdong University of Technology, Guangzhou 510006 (China); State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Zhao, Shoubai [School of Physics and Electronic Engineering, Guangzhou University, Guangzhou 510400 (China); Zheng, Changxi; Chen, Dihu [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); He, Zhenhui, E-mail: stshzh@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)
2013-12-16
MgO films were prepared by using pulsed cathodic vacuum arc deposition technique. The substrate bias voltage was in the range of −150 to −750 V. Film structure was investigated by X-ray diffraction (XRD). The annealing effect of thermal spike produced by the impacting of energetic ions was analyzed. The calculated results showed that the lifetime of a thermal spike generated by an energetic ion with the energy of 150 eV was less than one picosecond and it was sufficient to allow Mg{sup 2+} or O{sup 2-} to move one bond length to satisfy the intrinsic stress relief in the affected volume. The MgO(200) lattice spacings of the films deposited at different bias voltages were all larger than the ideal value of 2.1056 Å. As the bias amplitude increased the lattice spacing decreased, which indicated that the compressive stress in the film was partially relieved with increasing impacting ion energy. The stress relief also could be reflected from the film orientation with bias voltage. The biaxial elastic modulus for MgO(100), MgO(110) and MgO(111) planes were calculated and they were M{sub (100)} = 199 GPa, M{sub (110)} = 335 GPa and M{sub (111)} = 340 GPa, respectively. The M values indicated that the preferred orientation will be MgO(200) due to the minimum energy configuration when the lattice strain was large. It was confirmed by the XRD results in our experiments. - Highlights: • MgO thin films with preferred orientation were obtained by CVAD technique. • Annealing effect of a thermal spike in MgO film was discussed. • Lattice spacing of MgO film decreased with the increase of bias voltage. • Film preferred orientation changed from (200) to (220) as the bias voltage increased.
Microwave surface impedance of MgB2 thin film
International Nuclear Information System (INIS)
Jin, B B; Klein, N; Kang, W N; Kim, Hyeong-Jin; Choi, Eun-Mi; Lee, Sung-I K; Dahm, T; Maki, K
2003-01-01
The microwave surface impedance Z s = R s + jωμ 0 λ was measured with dielectric resonator techniques for two c-axis-oriented MgB 2 thin films. The temperature dependence of the penetration depth λ measured with a sapphire resonator at 17.93 GHz can be well fitted from 5 K close to T c by the standard BCS integral expression assuming the reduced energy gap Δ(0)/kT c to be as low as 1.13 and 1.03 for the two samples. From these fits the penetration depth at zero temperatures was determined to be 102 nm and 107 nm, respectively. The results clearly indicate the s-wave nature of the order parameter. The temperature dependence of surface resistance R s , measured with a rutile dielectric resonator, shows an exponential behaviour below about T c /2 with a reduced energy gap being consistent with the one determined from the λ data. The R s value at 4.2 K was found to be as low as 19 μΩ at 7.2 GHz, which is comparable with that of a high-quality high-temperature thin film of YBa 2 Cu 3 O 7 . A higher-order mode at 17.9 GHz was employed to determine the frequency f dependence of R s ∝ f n(T) . Our results revealed a decrease of n with increasing temperature ranging from n = 2 below 8 K to n 1 from 13 to 34 K
Stabilization of the dissipation-free current transport in inhomogeneous MgB2 thin films
International Nuclear Information System (INIS)
Treiber, S.; Stahl, C.; Schütz, G.; Soltan, S.; Albrecht, J.
2014-01-01
Highlights: • We investigate transport properties of inhomogeneous MgB 2 films. • An inhomogeneous microstructure stabilizes supercurrents. • Vortex pinning forces and energies have been analyzed experimentally. • In inhomogeneous films the increase of the pinning energy is responsible for stable supercurrents. - Abstract: In type-II superconductors at T = 0 the critical current density is determined by the pinning of flux lines. Considering an arbitrarily shaped energy landscape the pinning force at each pinning site is given by the derivative of the flux line energy with respect to the considered direction. At finite temperatures, in addition, thermal activation can lead to a depinning of flux lines. The governing property in this case is the depth of the corresponding pinning potential, i.e. the pinning energy. We show a detailed analysis of both pinning forces and pinning energies of MgB 2 films with inhomogeneous microstructure. We show that a pronounced increase of the pinning energy is responsible for the significantly enhanced stability of the dissipation-free current transport in thin inhomogeneous MgB 2 films. This is found even if the corresponding pinning forces are small
Orthorhombic polar Nd-doped BiFeO{sub 3} thin film on MgO substrate
Energy Technology Data Exchange (ETDEWEB)
Leontyev, I N; Janolin, P-E; Dkhil, B [Laboratoire Structures, Proprietes et Modelisation des Solides, UMR CNRS-Ecole Centrale Paris, 92295 Chatenay-Malabry Cedex (France); Yuzyuk, Yu I [Faculty of Physics, Southern Federal University, Zorge 5, Rostov-on-Don 344090 (Russian Federation); El-Marssi, M [Laboratoire de Physique de la Matiere Condensee, Universite de Picardie Jules Verne, 33 rue Saint Leu, 80039 Amiens (France); Chernyshov, D; Dmitriev, V [Swiss-Norwegian Beam Lines at ESRF, Boite Postale 220, F-38043 Grenoble (France); Golovko, Yu I; Mukhortov, V M, E-mail: i.leontiev@rambler.ru [Southern Scientific Center RAS, Rostov-on-Don, 344006 (Russian Federation)
2011-08-24
A Nd-doped BiFeO{sub 3} thin film deposited on MgO substrate was studied by synchrotron diffraction. The ferroelectric nature of the film is proven by in-plane remanent polarization measurement. The highest possible symmetry of the film is determined to be orthorhombic, within the Fm2m space group. Such a structure is rotated by 45{sup 0} with respect to the substrate and is consistent with tilts of oxygen octahedra doubling the unit cell. This polar structure presents a rather unusual strain-accommodation mechanism. (fast track communication)
Directory of Open Access Journals (Sweden)
Dong Xu
2015-10-01
Full Text Available This paper focuses on the effects of alkline-earth metal titante AETiO3 (AE=Mg, Ca, Sr doping on the microstructure and electric characteristics of CaCu3Ti4O12 thin films prepared by the sol–gel method. The results showed that the grain size of CCTO thin films could be increased by MgTiO3 doping. The movement of the grain boundaries was impeded by the second phases of CaTiO3 and SrTiO3 concentrating at grain boundaries in CaTiO3 and SrTiO3 doped CCTO thin films. Rapid ascent of dielectric constant could be observed in 0.1Mg TiO3 doped CCTO thin films, which was almost as three times high as pure CCTO thin film and the descent of the dielectric loss at low frequency could also be observed. In addition, the nonlinear coefficient (α, threshold voltage (VT and leakage current (IL of AETiO3 doped CCTO thin films (AE=Mg, Ca, Sr showed different variation with the increasing content of the MgTiO3, CaTiO3 and SrTiO3.
Directory of Open Access Journals (Sweden)
Yevheniy Pivak
2012-06-01
Full Text Available Using hydrogenography, we investigate the thermodynamic parameters and hysteresis behavior in Mg thin films capped by Ta/Pd, in a temperature range from 333 K to 545 K. The enthalpy and entropy of hydride decomposition, ∆Hdes = −78.3 kJ/molH2, ∆Sdes = −136.1 J/K molH2, estimated from the Van't Hoff analysis, are in good agreement with bulk results, while the absorption thermodynamics, ∆Habs = −61.6 kJ/molH2, ∆Sabs = −110.9 J/K molH2, appear to be substantially affected by the clamping of the film to the substrate. The clamping is negligible at high temperatures, T > 523 K, while at lower temperatures, T < 393 K, it is considerable. The hysteresis at room temperature in Mg/Ta/Pd films increases by a factor of 16 as compared to MgH2 bulk. The hysteresis increases even further in Mg/Pd films, most likely due to the formation of a Mg-Pd alloy at the Mg/Pd interface. The stress–strain analysis of the Mg/Ta/Pd films at 300–333 K proves that the increase of the hysteresis occurs due to additional mechanical work during the (de-hydrogenation cycle. With a proper temperature correction, our stress–strain analysis quantitatively and qualitatively explains the hysteresis behavior in thin films, as compared to bulk, over the whole temperature range.
Effects of the magnesium oxide thin films' microstructures on the residual stresses
Energy Technology Data Exchange (ETDEWEB)
He, Li-jun, E-mail: helijun4@126.com [The School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065 (China); The State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Wang, Li-yan [Electronic Information and Networking Research Institute, Collaborative Innovation Center for Information Communication Technology, Chongqing University of Posts and Telecommunications, Chongqing 400065 (China); Chen, Wei-Zhong [The School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065 (China); Liu, Xing-zhao [The State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China)
2016-09-15
The MgO thin films are deposited at various inclined angles. The morphology investigated by scanning electron microscope (SEM) shows the MgO thin films deposited at high inclined angles have columnar grain. The relationships between full width high maximum (FWHM) of ω-scan, residual stresses and the inclined angles are studied. The results show the smallest FWHM of MgO (002) is 4.968°, the residual stress of MgO thin films is compressive stress, and the residual stress of MgO thin films deposited at the inclined angle of 55° is the smallest. So the microstructures of MgO thin films fabricated by the oblique angle deposition (OAD) technique effectively control the residual stresses. - Highlights: • MgO thin films are deposited by oblique angle deposition technique. • The FWHMs of MgO is the smallest at the inclined angle of 55°. • Residual stress of MgO is the smallest at the inclined angle of 55°.
Energy Technology Data Exchange (ETDEWEB)
Fritzsche, H.; Poirier, E., E-mail: helmut.fritzsche@nrc.gc.ca [National Research Council Canada, Canadian Neutron Beam Centre, Chalk River, ON (Canada); Haagsma, J.; Ophus, C.; Luber, E.; Harrower, C.; Mitlin, D. [Univ. of Alberta, and National Research Council Canada, Chemical and Materials Engineering, Edmonton, AB (Canada)
2010-10-15
In this article, we show how neutron reflectometry (NR) can provide deep insight into the absorption and desorption properties of commercially promising hydrogen storage materials. NR benefits from the large negative scattering length of hydrogen atoms, which changes the reflectivity curve substantially, so that NR can determine not only the total amount of stored hydrogen but also the hydrogen distribution along the film normal, with nanometer resolution. To use NR, the samples must have smooth surfaces, and the film thickness should range between 10 and 200 nm. We performed a systematic study on thin Mg{sub 1-x}Al{sub x} alloy films (x = 0.2, 0.3, 0.4, 0.67) capped with a Pd catalyst layer. Our NR experiments showed that Mg{sub 0.7}Al{sub 0.3} is the optimum alloy composition with the highest amount of stored hydrogen and the lowest desorption temperature. All the thin films expand by about 20% because of hydrogen absorption, and the hydrogen is stored only in the MgAl layer with no hydrogen content in the Pd layer. (author)
Preparation of c-axis perpendicularly oriented ultra-thin L10-FePt films on MgO and VN underlayers
Futamoto, Masaaki; Shimizu, Tomoki; Ohtake, Mitsuru
2018-05-01
Ultra-thin L10-FePt films of 2 nm average thickness are prepared on (001) oriented MgO and VN underlayers epitaxially grown on base substrate of SrTiO3(001) single crystal. Detailed cross-sectional structures are observed by high-resolution transmission electron microscopy. Continuous L10-FePt(001) thin films with very flat surface are prepared on VN(001) underlayer whereas the films prepared on MgO(001) underlayer consist of isolated L10-FePt(001) crystal islands. Presence of misfit dislocation and lattice bending in L10-FePt material is reducing the effective lattice mismatch with respect to the underlayer to be less than 0.5 %. Formation of very flat and continuous FePt layer on VN underlayer is due to the large surface energy of VN material where de-wetting of FePt material at high temperature annealing process is suppressed under a force balance between the surface and interface energies of FePt and VN materials. An employment of underlayer or substrate material with the lattice constant and the surface energy larger than those of L10-FePt is important for the preparation of very thin FePt epitaxial thin continuous film with the c-axis controlled to be perpendicular to the substrate surface.
Epitaxial Pb(Mg1/3Nb2/3)O3 thin films synthesized by metal-organic chemical vapor deposition
International Nuclear Information System (INIS)
Bai, G. R.; Streiffer, S. K.; Baumann, P. K.; Auciello, O.; Ghosh, K.; Stemmer, S.; Munkholm, A.; Thompson, Carol; Rao, R. A.; Eom, C. B.
2000-01-01
Metal-organic chemical vapor deposition was used to prepare Pb(Mg 1/3 Nb 2/3 )O 3 (PMN) thin films on (001) SrTiO 3 and SrRuO 3 /SrTiO 3 substrates, using solid Mg β-diketonate as the Mg precursor. Parameters including the precursor ratio in the vapor phase, growth temperature, growth rate, and reaction pressure in the reactor chamber were varied in order to determine suitable growth conditions for producing phase-pure, epitaxial PMN films. A cube-on-cube orientation relationship between the thin film and the SrTiO 3 substrate was found, with a (001) rocking curve width of 0.1 degree sign , and in-plane rocking-curve width of 0.8 degree sign . The root-mean-square surface roughness of a 200-nm-thick film on SrTiO 3 was 2 to 3 nm as measured by scanning probe microscopy. The zero-bias dielectric constant and loss measured at room temperature and 10 kHz for a 200-nm-thick film on SrRuO 3 /SrTiO 3 were approximately 1100 and 2%, respectively. The remnant polarization for this film was 16 μC/cm 2 . (c) 2000 American Institute of Physics
SrRuO3 thin films grown on MgO substrates at different oxygen partial pressures
Zou, Bin
2013-01-08
A comprehensive study of SrRuO3 thin films growth on (001) MgO substrates by pulsed laser deposition in a wide oxygen pressure range from 10 to 300 mTorr was carried out. The experimental results showed a correlation between the lattice constants, resistivity, and oxygen partial pressures used. Ru deficiency detected only in films deposited at lower oxygen pressures (<50 mTorr), resulted in an elongation of the in-plane and out-of-plane lattice constants and an increase in the film resistivity. When deposited with oxygen partial pressure of 50 mTorr, SrRuO3 films had lattice parameters matching those of bulk SrRuO3 material and exhibited room temperature resistivity of 320 μΩ·cm. The resistivity of SrRuO 3/MgO films decreased with increasing oxygen partial pressure. Copyright © 2013 Materials Research Society.
Huang, Chieh-Szu; Chang, Ming-Chuan; Huang, Cheng-Liang; Lin, Shih-kang
2016-12-01
Thin-film electroluminescent devices are promising solid-state lighting devices. Red light-emitting phosphor is the key component to be integrated with the well-established blue light-emitting diode chips for stimulating natural sunlight. However, environmentally hazardous rare-earth (RE) dopants, e.g. Eu2+ and Ce2+, are commonly used for red-emitting phosphors. Mg2TiO4 inverse spinel has been reported as a promising matrix material for "RE-free" red light luminescent material. In this paper, Mg2TiO4 inverse spinel is investigated using both experimental and theoretical approaches. The Mg2TiO4 thin films were deposited on Si (100) substrates using either spin-coating with the sol-gel process, or radio frequency sputtering, and annealed at various temperatures ranging from 600°C to 900°C. The crystallinity, microstructures, and photoluminescent properties of the Mg2TiO4 thin films were characterized. In addition, the atomistic model of the Mg2TiO4 inverse spinel was constructed, and the electronic band structure of Mg2TiO4 was calculated based on density functional theory. Essential physical and optoelectronic properties of the Mg2TiO4 luminance material as well as its optimal thin-film processing conditions were comprehensively reported.
Energy Technology Data Exchange (ETDEWEB)
Prikhna, Tatiana, E-mail: prikhna@mail.ru [Institute for Superhard Materials of the National Academy of Sciences of Ukraine , 2, Avtozavodskaya Str. , Kiev 07074 (Ukraine); Shapovalov, Andrey [Institute for Superhard Materials of the National Academy of Sciences of Ukraine , 2, Avtozavodskaya Str. , Kiev 07074 (Ukraine); Eisterer, Michael [Atominstitut, Vienna University of Technology, Stadionallee 2, 1020 Vienna (Austria); Shaternik, Vladimir [G.V. Kurdyumov Institute for Metal Physics of the National Academy of Sciences of Ukraine, 36 Academician Vernadsky blvd., Kiev, 03680 (Ukraine); Goldacker, Wilfried [Karlsruhe Institute of Technology (KIT), 76344 Eggenstein (Germany); Weber, Harald W. [Atominstitut, Vienna University of Technology, Stadionallee 2, 1020 Vienna (Austria); Moshchil, Viktor; Kozyrev, Artem; Sverdun, Vladimir [Institute for Superhard Materials of the National Academy of Sciences of Ukraine , 2, Avtozavodskaya Str. , Kiev 07074 (Ukraine); Boutko, Viktor [Donetsk Institute for Physics and Engineering named after O.O. Galkin of the National Academy of Sciences of Ukraine, R. Luxemburg str.72, Donetsk-114, 83114 (Ukraine); Grechnev, Gennadiy [B. Verkin Institute for Low Temperature Physics of the National Academy of Sciences of Ukraine, 47, Prospekt Nauky, Kharkiv 61103 (Ukraine); Gusev, Alexandr [Donetsk Institute for Physics and Engineering named after O.O. Galkin of the National Academy of Sciences of Ukraine, R. Luxemburg str.72, Donetsk-114, 83114 (Ukraine); Kovylaev, Valeriy; Shaternik, Anton [Institute for Superhard Materials of the National Academy of Sciences of Ukraine , 2, Avtozavodskaya Str. , Kiev 07074 (Ukraine)
2017-02-15
Highlights: • Pinning in MgB{sub 2} depends on the Mg-B-O nano-scaled inhomogeneities. • Finer oxygen-enriched inhomogeneities is the reason of the higher J{sub c} in MgB{sub 2} thin films as compared to bulk. • The results of DOS calculations for MgB{sub 2-x}O{sub x} compounds demonstrate that they have metal-like behavior. • Ordered oxygen distribution in MgB{sub 2} (in pairs or zigzags) reduces binding energy. - Abstract: The comparison of nano-crystalline MgB{sub 2} oxygen-containing thin film (140 nm) and highly dense bulk materials showed that the critical current density, J{sub c}, depends on the distribution of Mg-B-O nano-scale inhomogeneities. It has been shown that MgB{sub 2} bulks with high J{sub c} in low (∼10{sup 6} A/cm{sup 2} in 0-1 T at 10 K) and medium magnetic fields contain MgB{sub 0.6-0.8}O{sub 0.8-0.9} nano-inclusions, where δT{sub c} or a combined δT{sub c} (dominant) / δ{sub l} pinning mechanism prevails, while in bulk MgB{sub 2} with high J{sub c} in high magnetic fields (B{sub irr}(18.5 K) = 15 T, B{sub c2}(0 K) = 42.1 T) MgB{sub 1.2-2.7}O{sub 1.8-2.5} nano-layers are present and δ{sub l} pinning prevails. The structure of oxygen-containing films with high J{sub c} in low and high magnetic fields (J{sub c} (0 T) = 1.8 × 10{sup 7} A/cm{sup 2} and J{sub c} (5 T) = 2 × 10{sup 6} A/cm{sup 2} at 10 K) contains very fine oxygen-enriched Mg-B-O inhomogeneities and δ{sub l} pinning is realized. The results of DOS calculations in MgB{sub 2-x}O{sub x} cells for x = 0, 0.125, 0.25, 0.5, 1 demonstrate that all compounds are conductors with metal-like behaviour. In the case of ordered oxygen substitution for boron the binding energy, E{sub b}, does not increase sufficiently as compared with that for MgB{sub 2}, while when oxygen atoms form zigzag chains the calculated E{sub b} is even lower (E{sub b} = −1.15712 Ry).
SrRuO3 thin films grown on MgO substrates at different oxygen partial pressures
Zou, Bin; Petrov, Peter K.; Alford, Neil McN.
2013-01-01
A comprehensive study of SrRuO3 thin films growth on (001) MgO substrates by pulsed laser deposition in a wide oxygen pressure range from 10 to 300 mTorr was carried out. The experimental results showed a correlation between the lattice constants
Epitaxial growth of fcc-CoxNi100-x thin films on MgO(110) single-crystal substrates
International Nuclear Information System (INIS)
Ohtake, Mitsuru; Nukaga, Yuri; Sato, Yoichi; Futamoto, Masaaki; Kirino, Fumiyoshi
2009-01-01
Co x Ni 100-x (x=100, 80, 20, 0 at. %) epitaxial thin films were prepared on MgO(110) single-crystal substrates heated at 300 deg. C by ultrahigh vacuum molecular beam epitaxy. The growth mechanism is discussed based on lattice strain and crystallographic defects. CoNi(110) single-crystal films with a fcc structure are obtained for all compositions. Co x Ni 100-x film growth follows the Volmer-Weber mode. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the Co x Ni 100-x films are in agreement within ±0.5% with the values of the respective bulk Co x Ni 100-x crystals, suggesting that the strain in the film is very small. High-resolution cross-sectional transmission microscopy shows that an atomically sharp boundary is formed between a Co(110) fcc film and a MgO(110) substrate, where periodical misfit dislocations are preferentially introduced in the film at the Co/MgO interface. The presence of such periodical misfit dislocations relieves the strain caused by the lattice mismatch between the film and the substrate.
Energy Technology Data Exchange (ETDEWEB)
Poirier, Eric [National Research Council Canada/Canadian Neutron Beam Centre, Bldg. 459, Chalk River Laboratories, Chalk River, ON, K0J 1J0 (Canada); Harrower, Chris T.; Kalisvaart, Peter [Chemical and Materials Engineering, University of Alberta and National Research Council Canada/National Institute for Nanotechnology, Edmonton, AB, T6G 2M9 (Canada); Bird, Adam [National Research Council Canada/Canadian Neutron Beam Centre, Bldg. 459, Chalk River Laboratories, Chalk River, ON, K0J 1J0 (Canada); Teichert, Anke [Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Instituut voor Kern-en Stralingsfysica and INPAC, K.U. Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium); Laboratorium voor Vaste-Stoffysica en Magnetisme and INPAC, K.U. Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium); Wallacher, Dirk; Grimm, Nico; Steitz, Roland [Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Mitlin, David [Chemical and Materials Engineering, University of Alberta and National Research Council Canada/National Institute for Nanotechnology, Edmonton, AB, T6G 2M9 (Canada); Fritzsche, Helmut, E-mail: Helmut.Fritzsche@nrc-cnrc.gc.ca [National Research Council Canada/Canadian Neutron Beam Centre, Bldg. 459, Chalk River Laboratories, Chalk River, ON, K0J 1J0 (Canada)
2011-05-05
Highlights: > Mg{sub 70}Al{sub 30} thin films studied for hydrogen absorption using in situ neutron reflectometry. > Films with Ta/Pd, Ti/Pd and Ni/Pd bilayer catalysts systematically compared. > Measurements reveals deuterium spillover from the catalysts to the MgAl phase. > The use of Ti-Pd bilayer offers best results in terms of amount absorbed and kinetics. > Key results cross-checked with X-ray reflectometry. - Abstract: We present a neutron reflectometry study of deuterium absorption in thin films of Al-containing Mg alloys capped with a Ta/Pd, Ni/Pd and Ti/Pd-catalyst bilayer. The measurements were performed at room temperature over the 0-1 bar pressure range under quasi-equilibrium conditions. The modeling of the measurements provided a nanoscale representation of the deuterium profile in the layers at different stages of the absorption process. The absorption mechanism observed was found to involve spillover of atomic deuterium from the catalyst layer to the Mg alloy phase, followed by the deuteration of the Mg alloy. Complete deuteration of the Mg alloy occurs in a pressure range between 100 and 500 mbar, dependent on the type of bilayer catalyst. The use of a Ti/Pd bilayer catalyst yielded the best results in terms of both storage density and kinetic properties.
International Nuclear Information System (INIS)
Palomera, Roger C.; Martínez, Omar S.; Pantoja-Enriquez, J.; Mathews, N.R.; Reyes-Banda, Martín G.; Krishnan, B.; Mathew, X.
2017-01-01
Highlights: • Cd_1_−_xMg_xTe films with band gap in the range 1.47–2.41 eV is obtained. • Cd substitution by Mg was confirmed with SIMS and XPS analysis. • Cd_1_−_xMg_xTe films maintained CdTe structural features but with higher band gap. • Mg incorporation in CdTe inhibited grain growth. - Abstract: In this paper we report a systematic work involving the development of Cd_1_−_xMg_xTe thin films by co-evaporation of CdTe and Mg. The evaporation rate of both materials were adjusted to obtain ternary films of varying stoichiometry and hence the band gap. We have deposited films with band gap ranging from 1.47 to 2.41 eV. The films were characterized for structural, morphological, optical, opto-electronic, and spectroscopic properties. The film stoichiometry was studied across the thickness using SIMS data. SEM images showed that the grain size has a dependence on Mg content in the film, which inhibits the grain growth. The structural parameters showed a systematic dependence on Mg content in the film, however, there was no noticeable change in the XRD reflections with respect that of pure CdTe for lower concentrations of Mg. XPS analysis shed light on the incorporation of Mg further supporting the band gap variations observed with the UV–Vis spectroscopic studies. The photoresponse of the film was affected by Mg incorporation. Prototype devices of the type Cd_1_−_XMg_xTe/CdS were fabricated and the results are discussed.
Yang, A. L.; Song, H. P.; Liang, D. C.; Wei, H. Y.; Liu, X. L.; Jin, P.; Qin, X. B.; Yang, S. Y.; Zhu, Q. S.; Wang, Z. G.
2010-04-01
Temperature-dependent photoluminescence characteristics of non-polar m-plane ZnO and ZnMgO alloy films grown by metal organic chemical vapor deposition have been studied. The enhancement in emission intensity caused by localized excitons in m-plane ZnMgO alloy films was directly observed and it can be further improved after annealing in nitrogen. The concentration of Zn vacancies in the films was increased by alloying with Mg, which was detected by positron annihilation spectroscopy. This result is very important to directly explain why undoped Zn1-xMgxO thin films can show p-type conduction by controlling Mg content, as discussed by Li et al. [Appl. Phys. Lett. 91, 232115 (2007)].
Epitaxial growth of bcc-FexCo100-x thin films on MgO(1 1 0) single-crystal substrates
International Nuclear Information System (INIS)
Ohtake, Mitsuru; Nishiyama, Tsutomu; Shikada, Kouhei; Kirino, Fumiyoshi; Futamoto, Masaaki
2010-01-01
Fe x Co 100-x (x=100, 65, 50 at%) epitaxial thin films were prepared on MgO(1 1 0) single-crystal substrates heated at 300 deg. C by ultra-high vacuum molecular beam epitaxy. The film structure and the growth mechanism are discussed. FeCo(2 1 1) films with bcc structure grow epitaxially on MgO(1 1 0) substrates with two types of variants whose orientations are rotated around the film normal by 180 deg. each other for all compositions. Fe x Co 100-x film growth follows the Volmer Weber mode. X-ray diffraction analysis indicates the out-of-plane and the in-plane lattice spacings are in agreement with the values of respective bulk Fe x Co 100-x crystals with very small errors less than ±0.4%, suggesting the strains in the films are very small. High-resolution cross-sectional transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the film at the Fe 50 Co 50 /MgO interface along the MgO[1 1-bar 0] direction. The presence of such periodical dislocations decreases the large lattice mismatch of about -17% existing at the FeCo/MgO interface along the MgO[1 1-bar 0] direction.
Energy Technology Data Exchange (ETDEWEB)
Kim, Sang Bum; Duong, Pham van; Ha, Dong Hyup; Oh, Young Hoon; Kang, Won Nam; Chai, Jong Seo [Sungkunkwan Univeversity, Suwon (Korea, Republic of); Hong, Seung Pyo; Kim, Ran Young [Kore Institute of Radiological and Medical Science, Seoul (Korea, Republic of)
2016-06-15
Superconducting properties of thin film MgB2 superconductors irradiated with 45 MeV α-particle beam were studied. After the irradiation, enhancement of the critical current density and pinning force was observed, scaling close to strong pinning formula. Double logarithmic plots of the maximum pinning force density with irreversible magnetic field show a power law behavior close to carbon-doped MgB2 film or polycrystals. Variation of normalized pinning force density in the reduced magnetic field suggests scaling formulas for strong pinning mechanism like planar defects. We also observed a rapid decay of critical current density as the vortex lattice constant decreases, due to the strong interaction between vortices and increasing magnetic field.
Microstructure of Co(112-bar 0) epitaxial thin films, grown on MgO(100) single-crystal substrates
Energy Technology Data Exchange (ETDEWEB)
Nukaga, Yuri; Ohtake, Mitsuru; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi, E-mail: nukaga@futamoto.elect.chuo-u.ac.j [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan)
2010-01-01
Co(112-bar 0) epitaxial thin films with hcp structure were prepared on MgO(100) single-crystal substrates heated at 300 {sup 0}C by ultra high vacuum molecular beam epitaxy. The microstructure is investigated by employing X-ray diffraction and high-resolution transmission electron microscopy. The film consists of two types of domains whose c-axes are rotated around the film normal by 90{sup 0} each other. Stacking faults are observed for the film along the Co[0001] direction. An atomically sharp boundary is recognized between the film and the substrate, where some misfit dislocations are introduced in the film at the Co/MgO interface. Dislocations are also observed in the film up to 15 nm thickness from the interface. Presence of such stacking faults and misfit dislocations seem to relieve the strain caused by the lattice mismatch between the film and the substrate. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the film are in agreement within 0.5% and 0.1%, respectively, with those of the bulk hcp-Co crystal, suggesting the strain in the film is very small.
Microstructure of Co(112-bar 0) epitaxial thin films, grown on MgO(100) single-crystal substrates
International Nuclear Information System (INIS)
Nukaga, Yuri; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi
2010-01-01
Co(112-bar 0) epitaxial thin films with hcp structure were prepared on MgO(100) single-crystal substrates heated at 300 0 C by ultra high vacuum molecular beam epitaxy. The microstructure is investigated by employing X-ray diffraction and high-resolution transmission electron microscopy. The film consists of two types of domains whose c-axes are rotated around the film normal by 90 0 each other. Stacking faults are observed for the film along the Co[0001] direction. An atomically sharp boundary is recognized between the film and the substrate, where some misfit dislocations are introduced in the film at the Co/MgO interface. Dislocations are also observed in the film up to 15 nm thickness from the interface. Presence of such stacking faults and misfit dislocations seem to relieve the strain caused by the lattice mismatch between the film and the substrate. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the film are in agreement within 0.5% and 0.1%, respectively, with those of the bulk hcp-Co crystal, suggesting the strain in the film is very small.
On the way to enhance the optical absorption of a-Si in NIR by embedding Mg_2Si thin film
International Nuclear Information System (INIS)
Chernev, I. M.; Shevlyagin, A. V.; Galkin, K. N.; Stuchlik, J.; Remes, Z.; Fajgar, R.; Galkin, N. G.
2016-01-01
Mg_2Si thin film was embedded in amorphous silicon matrix by solid phase epitaxy. The structure and optical properties were investigated by electron energy loss, X-ray photoelectron, Raman, and photo thermal deflection spectroscopy measurements. It was found that in the photon energy range of 0.8–1.7 eV, the light absorption of the structure with magnesium silicide (Mg_2Si) film embedded in a-Si(i) matrix is 1.5 times higher than that for the same structure without Mg_2Si.
Intrinsic flux pinning mechanisms in different thickness MgB2 films
Directory of Open Access Journals (Sweden)
C. Yang
2017-03-01
Full Text Available MgB2 films in four thickness (60 nm, 200nm, 600nm and 1μm have been fabricated by hybrid physical–chemical vapor deposition technique (HPCVD. By measuring the magnetization hysteresis loops and the resistivity, we have obtained the transport and magnetic properties of the four films. After that, the pinning mechanisms in them were discussed. Comparing the pinning behaviors in these ultrathin films, thin films and thick films, it was found that there exist different pinning types in MgB2 films of different thickness. In combination with the study of the surface morphology, cross-section and XRD results, we concluded that MgB2 films had different growth modes in different growth stages. For thin films, films grew along c axis, and grain boundaries acted as surface pinning. While for thick films, films grew along c axis at first, and then changed to a-b axis growth. As a result, the a-b axis grains acted as strong volume pinning.
Energy Technology Data Exchange (ETDEWEB)
Martinez, Omar S. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico); Universidad Politecnica del Estado de Guerrero, Comunidad de Puente Campuzano, C.P. 40325 Taxco de Alarcon, Guerrero (Mexico); Millan, Aduljay Remolina [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico); Huerta, L.; Santana, G. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico. C.P 04510 Mexico D.F. (Mexico); Mathews, N.R.; Ramon-Garcia, M.L.; Morales, Erik R. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico); Mathew, X., E-mail: xm@cie.unam.mx [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico)
2012-02-15
Highlights: Black-Right-Pointing-Pointer Thin films of Cd{sub 1-x}Mg{sub x}Te with high spatial uniformity and band gap in the range of 1.6-1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg. Black-Right-Pointing-Pointer Obtained Cd{sub 1-x}Mg{sub x}Te films have the structural characteristics of the CdTe, evidence of the change in atomic scattering due to incorporation of Mg was observed. Black-Right-Pointing-Pointer XRD and XPS data confirmed the incorporation of Mg in the lattice of CdTe. Black-Right-Pointing-Pointer SEM images revealed the impact of Mg incorporation on the morphology of the films, the changes in grain size and grain morphology are noticeable. - Abstract: Thin films of Cd{sub 1-x}Mg{sub x}Te with band gap in the range of 1.6-1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg on glass substrates heated at 300 Degree-Sign C. Different experimental techniques such as XRD, UV-vis spectroscopy, SEM, and XPS were used to study the effect of Mg incorporation into the lattice of CdTe. The band gap of the films showed a clear tendency to increase as the Mg content in the film is increased. The Cd{sub 1-x}Mg{sub x}Te films maintain all the structural characteristics of the CdTe, however, diminishing of intensity for the XRD patterns is observed due to both change in preferential orientation and change in atomic scattering due to the incorporation of Mg. SEM images showed significant evidences of morphological changes due to the presence of Mg. XRD, UV-vis spectroscopy, and XPS data confirmed the incorporation of Mg in the lattice of CdTe. The significant increase in band gap of CdTe due to incorporation of Mg suggests that the Cd{sub 1-x}Mg{sub x}Te thin film is a candidate material to use as absorber layer in the top-cell of a tandem solar cell.
DEFF Research Database (Denmark)
Grivel, Jean-Claude; Bertelsen, Christian Vinther; Andersen, Niels Hessel
2014-01-01
Bi2Sr2CaCu2O8 thin films have been deposited on MgO single crystal substrates by spin-coating a solution based on 2-ethylhexanoate precursors dissolved in xylene. Pyrolysis takes place between 200°C and 450°C and is accompanied by the release of 2-ethylhexanoic acid, CO2 and H2O vapour. Highly c...
Energy Technology Data Exchange (ETDEWEB)
Beringer, D. B. [College of William and Mary, Williamsburg, VA (United States). Dept. of Physics; Roach, W. M. [College of William and Mary, Williamsburg, VA (United States). Dept. of Applied Science; Clavero, C. [College of William and Mary, Williamsburg, VA (United States). Dept. of Applied Science; Reece, C. E. [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Lukaszew, R. A. [College of William and Mary, Williamsburg, VA (United States). Dept. of Physics; College of William and Mary, Williamsburg, VA (United States). Dept. of Applied Science
2013-02-05
This paper describes surface studies to address roughness issues inherent to thin film coatings deposited onto superconducting radio frequency (SRF) cavities. This is particularly relevant for multilayered thin film coatings that are being considered as a possible scheme to overcome technical issues and to surpass the fundamental limit of ~500 MV/m accelerating gradient achievable with bulk niobium. In 2006, a model by Gurevich [ Appl. Phys. Lett. 88 012511 (2006)] was proposed to overcome this limit that involves coating superconducting layers separated by insulating ones onto the inner walls of the cavities. Thus, we have undertaken a systematic effort to understand the dynamic evolution of the Nb surface under specific deposition thin film conditions onto an insulating surface in order to explore the feasibility of the proposed model. We examine and compare the morphology from two distinct Nb/MgO series, each with its own epitaxial registry, at very low growth rates and closely examine the dynamical scaling of the surface features during growth. Further, we apply analysis techniques such as power spectral density to the specific problem of thin film growth and roughness evolution to qualify the set of deposition conditions that lead to successful SRF coatings.
Ion channeling study of epitaxially grown HoBa2Cu3Ox thin films on MgO(001)
International Nuclear Information System (INIS)
Watamori, Michio; Shoji, Fumiya; Hanawa, Teruo; Oura, Kenjiro; Itozaki, Hideo.
1990-01-01
The crystalline quality of high-T c superconducting HoBa 2 Cu 3 O x thin films formed on MgO(001) has been investigated by a high-energy ion channeling technique. Analysis was performed at 3 depth regions (surface, inside, and interface), and the degree of crystalline quality at each depth was estimated. Based on ion channeling measurements carried out with the normal and off-normal and directions, it has been found that (1) the crystalline quality at the film surface is much better than that at the interface, (2) the crystalline disorder can be seen mainly along the c-axis, and (3) the film consists of two domains, 90deg rotated from each other about the c-axis of the film. The crystalline quality of the MgO substrates has also been investigated. (author)
Hydrophobicity studies of polymer thin films with varied CNT concentration
M. Rodzi, N. H.; M. Shahimin, M.; Poopalan, P.; Man, B.; M. Nor, M. N.
2013-12-01
Surface functionalization studies for re-creating a `Lotus Leaf' effect (superhydrophobic) have been carried out for the past decade; looking for the material which can provide high transparency, low energy surface and high surface roughness. Fabrication of polydimethylsiloxane (PDMS) and multiwalled carbon nanotubes (MWCNT) hybrid thin film variations on glass to produce near-superhydrophobic surfaces is presented in this paper. There are three important parameters studied in producing hydrophobic surfaces based on the hybrid thin films; concentration of PDMS, concentration of MWCNT and droplet sizes. The study is carried out by using PDMS of varied cross linker ratio (10:1, 30:1 and 50:1) with MWCNT concentration of 1mg, 10mg and 15mg for 0.5 μl, 2.0 μl, 5.0 μl and 10 μl droplet sizes. The resulting hybrid thin films show that hydrophobicity increased with increasing cross linker ratio and MWCNT percentage in the PDMS solution. A near superhydrophobic surface can be created when using 15 mg of MWCNT with 50:1 cross linker ratio PDMS thin films, measured on 10 μl droplet size. The hybrid thin films produced can be potentially tailored to the application of biosensors, MEMS and even commercial devices.
Energy Technology Data Exchange (ETDEWEB)
Shigematsu, K. [Department of Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033 (Japan); Chikamatsu, A., E-mail: chikamatsu@chem.s.u-tokyo.ac.jp; Fukumura, T. [Department of Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033 (Japan); JST-CREST, Bunkyo-ku, Tokyo 113-0033 (Japan); Toyoda, S. [Department of Materials Science and Engineering, Kyoto University, Yoshida-honmachi, Kyoto 606-8501 (Japan); Ikenaga, E. [JASRI/SPring-8, Mikazuki-cho, Hyogo 679-5198 (Japan); Hasegawa, T. [Department of Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033 (Japan); JST-CREST, Bunkyo-ku, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), Kawasaki, Kanagawa 213-0012 (Japan)
2014-06-30
We fabricated epitaxial thin films of oxygen-vacant Sr{sub 2}MgMoO{sub 6−δ} using pulsed laser deposition. The films showed low resistivity of the order of 10{sup −2} Ω cm at 300 K. X-ray diffraction analyses revealed that Mg and Mo ions in the Sr{sub 2}MgMoO{sub 6−δ} films were considerably disordered, compared to those in bulk Sr{sub 2}MgMoO{sub 6−δ}. The proportion of oxygen vacancies estimated through hard x-ray photoemission measurements was as large as 0.37, and correlated well with the Mg/Mo ordering.
On the way to enhance the optical absorption of a-Si in NIR by embedding Mg{sub 2}Si thin film
Energy Technology Data Exchange (ETDEWEB)
Chernev, I. M., E-mail: igor-chernev7@mail.ru; Shevlyagin, A. V.; Galkin, K. N. [Institute of Automation and Control Processes of FEB RAS, Radio St. 5, 690041 Vladivostok (Russian Federation); Stuchlik, J. [Institute of Physics of the ASCR, v. v. i., Cukrovarnická 10/112, 162 00 Praha 6 (Czech Republic); Remes, Z. [Institute of Physics of the ASCR, v. v. i., Cukrovarnická 10/112, 162 00 Praha 6 (Czech Republic); FBE CTU, Nam. Sitna 3105, 272 01 Kladno (Czech Republic); Fajgar, R. [Institute of Chemical Process Fundamentals of the ASCR, v. v. i., Rozvojová 135, 165 02 Praha 6 (Czech Republic); Galkin, N. G. [Institute of Automation and Control Processes of FEB RAS, Radio St. 5, 690041 Vladivostok (Russian Federation); Far Eastern Federal University, School of Natural Sciences, Sukhanova St. 8, 690950 Vladivostok (Russian Federation)
2016-07-25
Mg{sub 2}Si thin film was embedded in amorphous silicon matrix by solid phase epitaxy. The structure and optical properties were investigated by electron energy loss, X-ray photoelectron, Raman, and photo thermal deflection spectroscopy measurements. It was found that in the photon energy range of 0.8–1.7 eV, the light absorption of the structure with magnesium silicide (Mg{sub 2}Si) film embedded in a-Si(i) matrix is 1.5 times higher than that for the same structure without Mg{sub 2}Si.
Etching mechanism of MgO thin films in inductively coupled Cl2/Ar plasma
International Nuclear Information System (INIS)
Efremov, A.M.; Koo, Seong-Mo; Kim, Dong-Pyo; Kim, Kyoung-Tae; Kim, Chang-Il
2004-01-01
The etching mechanism of MgO thin films in Cl 2 /Ar plasma was investigated. It was found that the increasing Ar in the mixing ratio of Cl 2 /Ar plasma causes nonmonotonic MgO etch rate, which reaches a maximum value at 70%Ar+30%Cl 2 . Langmuir probe measurement showed the noticeable influence of Cl 2 /Ar mixing ratio on electron temperature and electron density. The zero-dimensional plasma model indicated monotonic changes of both densities and fluxes of active species. At the same time, analyses of surface kinetics showed the possibility of nonmonotonic etch rate behavior due to the concurrence of physical and chemical pathways in ion-assisted chemical reaction
Magnetic resonance studies of the Mg acceptor in thick free-standing and thin-film GaN
Zvanut, Mary Ellen
Mg, the only effective p-type dopant for the nitrides, substitutes for Ga and forms an acceptor with a defect level of about 0.16 eV. The magnetic resonance of such a center should be highly anisotropic, yet early work employing both optically detected magnetic resonance (ODMR) and electron paramagnetic resonance (EPR) spectroscopies revealed a defect with a nearly isotropic g-tensor. The results were attributed to crystal fields caused by compensation and/or strain typical of the heteroepitaxially grown films. The theory was supported by observation of the expected highly anisotropic ODMR signature in homoepitaxially grown films in which dislocation-induced non-uniform strain and compensation are reduced. The talk will review EPR measurements of thin films and describe new work which takes advantage of the recently available thick free-standing GaN:Mg substrates grown by hydride vapor phase epitaxy (HVPE) and high nitrogen pressure solution growth (HNPS). Interestingly, the films and HVPE substrates exhibit characteristically different types of EPR signals, and no EPR response could be induced in the HNPS substrates, with or without illumination. In the heteroepitaxial films, a curious angular dependent line-shape is observed in addition to the nearly isotropic g-tensor characteristic of the Mg-related acceptor. On the other hand, the free-standing HVPE crystals reveal a clear signature of a highly anisotropic shallow acceptor center. Comparison with SIMS measurements implies a direct relation to the Mg impurity, and frequency-dependent EPR studies demonstrate the influence of the anisotropic crystal fields. Overall, the measurements of the thick free-standing crystals show that the Mg acceptor is strongly affected by the local environment. The ODMR was performed by Evan Glaser, NRL and the free-standing Mg-doped HVPE crystals were grown by Jacob Leach, Kyma Tech. The work at UAB is supported by NSF Grant No. DMR-1308446.
International Nuclear Information System (INIS)
Lee, T. G.; Park, S. W.; Seong, W. K.; Huh, J. Y.; Jung, S. G.; Kang, W. N.; Lee, B. K.; An, K. S.
2008-01-01
[ MgB 2 ] thin films were fabricated using hybrid physical-chemical vapor deposition (HPCVD) method on silicon substrates with buffers of alumina grown by using atomic layer deposition method. The growth war in a range of temperatures 500 - 600 degrees C and under the reactor pressures of 25 - 50 degrees C. There are some interfacial reactions in the as-grown films with impurities of mostly Mg 2 Si, MgAl 2 O 4 , and other phases. The T c 's of MgB 2 films were observed to be as high as 39 K, but the transition widths were increased with growth temperatures. The magnetization was measured as a function of temperature down to the temperature of 5 K, but the complete Meissner effect was not observed, which shows that the granular nature of weak links is prevailing. The formation of mostly Mg 2 Si impurity in HPCVD process is discussed, considering the diffusion and reaction of Mg vapor with silicon substrates.
Magnetic neutron diffraction of MnO thin films
International Nuclear Information System (INIS)
Neubeck, W.; Vettier, C.; Mannix, D.; Bernhoeft, N.; Hiess, A.; Ranno, L.; Givord, D.
1999-01-01
We report on magnetic neutron diffraction carried out on various epitaxial MnO(III) thin films grown on sapphire and MgO substrates. In all samples, of masses between 5 and 50 μg, magnetic Bragg peaks have been observed. The films exhibit what appears to be continuous phase-transitions in contrast to the strongly discontinuous transition exhibited by bulk samples. In addition, the Neel temperature of films prepared on sapphire substrates is strongly enhanced above that of the bulk whilst that of the film grown on MgO is depressed. The possibility to measure magnetic excitations in such thin film systems is discussed in the light of promising test results obtained from an inelastic magnetic neutron scattering experiment on the IN8 spectrometer. (authors)
International Nuclear Information System (INIS)
Legrand, C.; Dupont, L.; Davoisne, C.; Le Marrec, F.; Perriere, J.; Baudrin, E.
2011-01-01
Olivine-type LiFePO 4 thin films were grown on MgO (1 0 0) substrates by pulsed laser deposition (PLD). The formation of an original nanostructure is evidenced by transmission electron microscopy measurements. Indeed, on focused ion beam prepared cross sections of the thin film, we observe, the amazing formation of metallic iron/olivine nanostructures. The appearance of such a structure is explained owing to a topotactic relation between the two phases as well as a strong Mg diffusion from the substrate to the film surface. Magnesium migration is thus concomitant with the creation of metallic iron domains that grow from the core of the film to the surface leading to large protuberances. To the best of our knowledge, this is the first report on iron extrusion from the olivine-type LiFePO 4 . -- Graphical Abstract: HRTEM image of olivine/Fe nanostructure obtained by PLD. Display Omitted Research highlights: → This manuscript describes the attempt to prepare textured LiFePO 4 by PLD. This is presently a challenge to better understand the physical properties of the material, used as cathode in lithium ion batteries. → We describe for the first time the iron extrusion from this material. Indeed, there were recent reports on the possible non-stoichiometry, i.e. lithium or oxygen. However, on the iron side, only some defect were observed for hydrothermally prepared material but the extrusion is new in this paper. → We prepared interesting nanostructures which could be used for different fundamental studies: electric and magnetic measurements.
Directory of Open Access Journals (Sweden)
T. Santhosh Kumar
2014-06-01
Full Text Available We report the structural, dielectric and leakage current properties of Co doped MgTiO3 thin films deposited on platinized silicon (Pt/TiO2/SiO2/Si substrates by RF magnetron sputtering. The role of oxygen mixing percentage (OMP on the growth, morphology, electrical and dielectric properties of the thin films has been investigated. A preferred orientation of grains along (110 direction has been observed with increasing the OMP. Such evolution of the textured growth is explained on the basis of the orientation factor analysis followed the Lotgering model. (Mg1-xCoxTiO3 (x = 0.05 thin films exhibits a maximum relative dielectric permittivity of ɛr = 12.20 and low loss (tan δ ∼ 1.2 × 10−3 over a wide range of frequencies for 75% OMP. The role of electric field frequency (f and OMP on the ac-conductivity of (Mg0.95Co0.05TiO3 have been studied. A progressive increase in the activation energy (Ea and relative permittivity ɛr values have been noticed up to 75% of OMP, beyond which the properties starts deteriorate. The I-V characteristics reveals that the leakage current density decreases from 9.93 × 10−9 to 1.14 × 10−9 A/cm2 for OMP 0% to 75%, respectively for an electric field strength of 250 kV/cm. Our experimental results reveal up to that OMP ≥ 50% the leakage current mechanism is driven by the ohmic conduction, below which it is dominated by the schottky emission.
Growth of thin films of TiN on MgO(100) monitored by high-pressure RHEED
DEFF Research Database (Denmark)
Pryds, Nini; Cockburn, D.; Rodrigo, Katarzyna Agnieszka
2008-01-01
Reflection high-energy electron diffraction (RHEED) operated at high pressure has been used to monitor the initial growth of titanium nitride (TiN) thin films on single-crystal (100) MgO substrates by pulsed laser deposition (PLD). This is the first RHEED study where the growth of TiN films...... electron microscopy. These observations are in good agreement with the three-dimensional Volmer-Weber growth type, by which three-dimensional crystallites are formed and later cause a continuous surface roughening. This leads to an exponential decrease in the intensity of the specular spot in the RHEED...
Electrical properties of epitaxially grown VOx thin films
Rata, A.D.; Chezan, A.R; Presura, C.N.; Hibma, T
2003-01-01
High quality VOx thin films on MgO(100) substrates were prepared and studied from the structural and electronic point of view. Epitaxial growth was confirmed by RHEED and XRD techniques. The oxygen content of VOx thin films as a function of oxygen flux was determined using RBS. The upper and lower
A-axis oriented superconductive YBCO thin films. Growth mechanism on MgO substrate. [Y-Ba-Cu-O
Energy Technology Data Exchange (ETDEWEB)
Hamet, J F; Mercey, B; Hervieu, M; Poullain, G; Raveau, B [Centre de Materiaux Supraconducteurs, CRISMAT-ISMRa, 14 - Caen (France)
1992-08-01
The growth mechanism of a-axis oriented YBCO thin films has been studied by TEM. At 650degC, a disordered cubic perovskite is first formed with a[sub p]parallela[sub MgO], then a strained tetragonal a-axis oriented perovskite is observed, with c=3a[sub p], slightly misoriented with respect to MgO and showing a marquetry-like contrast. At 750degC, a [1anti 10] axis oriented perovskite is formed whose lattice exhibits a rotation with respect to MgO lattice, but also a tilting of the [CuO[sub 2
Beringer, D. B.; Roach, W. M.; Clavero, C.; Reece, C. E.; Lukaszew, R. A.
2013-02-01
This paper describes surface studies to address roughness issues inherent to thin film coatings deposited onto superconducting radio frequency (SRF) cavities. This is particularly relevant for multilayered thin film coatings that are being considered as a possible scheme to overcome technical issues and to surpass the fundamental limit of ˜50MV/m accelerating gradient achievable with bulk niobium. In 2006, a model by Gurevich [Appl. Phys. Lett. 88, 012511 (2006)APPLAB0003-695110.1063/1.2162264] was proposed to overcome this limit that involves coating superconducting layers separated by insulating ones onto the inner walls of the cavities. Thus, we have undertaken a systematic effort to understand the dynamic evolution of the Nb surface under specific deposition thin film conditions onto an insulating surface in order to explore the feasibility of the proposed model. We examine and compare the morphology from two distinct Nb/MgO series, each with its own epitaxial registry, at very low growth rates and closely examine the dynamical scaling of the surface features during growth. Further, we apply analysis techniques such as power spectral density to the specific problem of thin film growth and roughness evolution to qualify the set of deposition conditions that lead to successful SRF coatings.
Directory of Open Access Journals (Sweden)
D. B. Beringer
2013-02-01
Full Text Available This paper describes surface studies to address roughness issues inherent to thin film coatings deposited onto superconducting radio frequency (SRF cavities. This is particularly relevant for multilayered thin film coatings that are being considered as a possible scheme to overcome technical issues and to surpass the fundamental limit of ∼50 MV/m accelerating gradient achievable with bulk niobium. In 2006, a model by Gurevich [Appl. Phys. Lett. 88, 012511 (2006APPLAB0003-695110.1063/1.2162264] was proposed to overcome this limit that involves coating superconducting layers separated by insulating ones onto the inner walls of the cavities. Thus, we have undertaken a systematic effort to understand the dynamic evolution of the Nb surface under specific deposition thin film conditions onto an insulating surface in order to explore the feasibility of the proposed model. We examine and compare the morphology from two distinct Nb/MgO series, each with its own epitaxial registry, at very low growth rates and closely examine the dynamical scaling of the surface features during growth. Further, we apply analysis techniques such as power spectral density to the specific problem of thin film growth and roughness evolution to qualify the set of deposition conditions that lead to successful SRF coatings.
Preparation of high quality superconducting thin MgB2 films for electronics
International Nuclear Information System (INIS)
Surdu, Andrei; Zdravkov, Vladimir; Sidorenko, Anatolie; Rossolenko, Anna; Ryazanov, Valerii; Bdikin, Igor; Kroemer, Oliver; Nold, Eberhard; Koch, Thomas; Schimmel, Thomas
2007-01-01
In this work we report the growth of high-Tc MgB 2 smooth films which are prepared in a two-step process: 1) deposition of the precursor films and 2) their annealing in Mg vapor with a specially designed, reusable reactor. Our method opens perspectives for the use of MgB 2 films in microelectronics, especially for high-frequency applications. (authors)
Effect of stabilizer on optical and structural properties of MgO thin ...
Indian Academy of Sciences (India)
and are not easy to handle due to high moisture sensitivity. Metal salts include ... diethanolamine (DEA), triethanolamine (TEA) and acety- lacetone .... SEM analysis. Figure 9 shows SEM micrographs of MgO films prepared by three different sols. SEM micrographs of MgO thin films confirm difference between porosity of.
Critical current density of MgB2 thin films and the effect of interface pinning
International Nuclear Information System (INIS)
Choi, Eun-Mi; Gupta, S K; Sen, Shashwati; Lee, Hyun-Sook; Kim, Hyun-Jung; Lee, Sung-Ik
2004-01-01
Preferentially oriented MgB 2 thin films with c-axis normal to the surface have been prepared and characterized for microstructure and transport properties. The magnetic field dependence of superconducting critical current density J c has been determined from the magnetization hysteresis (M-H) loops at various temperatures using the Bean's critical state model. High J c of these films show their potential for applications. We have also measured the angular dependences of J c . The angular dependence is seen to be in agreement with the anisotropic Ginzburg-Landau model except that at angles close to the ab plane, increased pinning due to film-substrate interaction is observed. The angular range where interface pinning is effective has been determined by measurement of asymmetry in dissipation on reversal of current for fields applied at angles close to the ab plane
Interplay of uniaxial and cubic anisotropy in epitaxial Fe thin films on MgO (001 substrate
Directory of Open Access Journals (Sweden)
Srijani Mallik
2014-09-01
Full Text Available Epitaxial Fe thin films were grown on annealed MgO(001 substrates at oblique incidence by DC magnetron sputtering. Due to the oblique growth configuration, uniaxial anisotropy was found to be superimposed on the expected four-fold cubic anisotropy. A detailed study of in-plane magnetic hysteresis for Fe on MgO thin films has been performed by Magneto Optic Kerr Effect (MOKE magnetometer. Both single step and double step loops have been observed depending on the angle between the applied field and easy axis i.e. along ⟨100⟩ direction. Domain images during magnetization reversal were captured by Kerr microscope. Domain images clearly evidence two successive and separate 90° domain wall (DW nucleation and motion along cubic easy cum uniaxial easy axis and cubic easy cum uniaxial hard axis, respectively. However, along cubic hard axis two 180° domain wall motion dominate the magnetization reversal process. In spite of having four-fold anisotropy it is essential to explain magnetization reversal mechanism in 0°< ϕ < 90° span as uniaxial anisotropy plays a major role in this system. Also it is shown that substrate rotation can suppress the effect of uniaxial anisotropy superimposed on four-fold anisotropy.
Aryan, A.; Guillet, B.; Routoure, J. M.; Fur, C.; Langlois, P.; Méchin, L.
2015-01-01
We present measurements of the thermal conductance of thin-film-on-substrate structures that could serve as thin film uncooled bolometers. Studied samples were 75 nm thick epitaxial La0.7Sr0.3MnO3 thin films deposited on SrTiO3 (0 0 1) and MgO (0 0 1) substrates patterned in square geometries of areas ranging from 50 μm × 50 μm to 200 μm × 200 μm. The model allows estimating thermal boundary conductance values at the interface between film and substrate of 0.28 ± 0.08 × 106 W K-1 m-2 for LSMO/STO (0 0 1) and 5.8 ± 3.0 × 106 W K-1 m-2 for LSMO/MgO (0 0 1) from measurements performed in the static regime. Analytical expressions of thermal conductance and thermal capacitance versus modulation frequency are compared to measurements of the elevation temperature due to absorbed incoming optical power. The overall good agreement found between measurements and model finally provides the possibility to calculate the bolometric response of thin film bolometers, thus predicting their frequency response for various geometries.
International Nuclear Information System (INIS)
Kato, Yushi; Yamauchi, Ryosuke; Arai, Hideki; Tan, Geng; Tsuchimine, Nobuo; Kobayashi, Susumu; Saeki, Kazuhiko; Takezawa, Nobutaka; Mitsuhashi, Masahiko; Kaneko, Satoru; Yoshimoto, Mamoru
2012-01-01
Crystalline BaB 6 (1 0 0) thin films can be fabricated on MgO (1 0 0) substrates by inserting a 2-3 nm-thick epitaxial SrB 6 (1 0 0) buffer layer by pulsed laser deposition (PLD) in ultra-high vacuum (i.e., laser molecular beam epitaxy). Reflection high-energy electron diffraction and X-ray diffraction measurements indicated the heteroepitaxial structure of BaB 6 (1 0 0)/SrB 6 (1 0 0)/MgO (1 0 0) with the single domain of the epitaxial relationship. Conversely, BaB 6 thin films without the buffer layer were not epitaxial instead they developed as polycrystalline films with a random in-plane configuration and some impurity phases. As a result, the buffer layer is considered to greatly affect the initial growth of epitaxial BaB 6 thin films; therefore, in this study, buffering effects have been discussed. From the conventional four-probe measurement, it was observed that BaB 6 epitaxial thin films exhibit n-type semiconducting behavior with a resistivity of 2.90 × 10 -1 Ω cm at room temperature.
Hall conductivity and the vortex phase in MgB2 thin films
International Nuclear Information System (INIS)
Jung, Soon-Gil; Seong, W K; Huh, Ji Young; Lee, T G; Kang, W N; Choi, Eun-Mi; Kim, Heon-Jung; Lee, Sung-Ik
2007-01-01
In a MgB 2 thin film superconductor, we have found that Hall conductivity (σ xy ) is described by the sum of two terms, σ xy = C 1 /H+C 3 H, where C 1 and C 3 are independent of the magnetic fields and have positive values. C 1 is observed to be proportional to (1-t) n with n = 4.2, where t is the reduced temperature (T/T c ), and C 3 is weakly dependent on the temperature. These results are consistent with those of the overdoped La 2-x Sr x CuO 4 superconductors. Based on Hall angle data, we obtained a vortex phase diagram with three regions, vortex-solid, crossover, and vortex-liquid regions in the H-T plane
Magnesium growth in magnesium deuteride thin films during deuterium desorption
Energy Technology Data Exchange (ETDEWEB)
Checchetto, R., E-mail: riccardo.checchetto@unitn.it [Dipartimento di Fisica and CNISM, Università di Trento, Via Sommarive 14, I-38123 Trento (Italy); Miotello, A. [Dipartimento di Fisica and CNISM, Università di Trento, Via Sommarive 14, I-38123 Trento (Italy); Mengucci, P.; Barucca, G. [Dipartimento di Fisica e Ingegneria dei Materiali e del Territorio, Università Politecnica delle Marche, I-60131 Ancona (Italy)
2013-12-15
Highlights: ► Highly oriented Pd-capped magnesium deuteride thin films. ► The MgD{sub 2} dissociation was studied at temperatures not exceeding 100 °C. ► The structure of the film samples was analyzed by XRD and TEM. ► The transformation is controlled by the re-growth velocity of the Mg layers. ► The transformation is thermally activated, activation energy value of 1.3 ± 0.1 eV. -- Abstract: Pd- capped nanocrystalline magnesium thin films having columnar structure were deposited on Si substrate by e-gun deposition and submitted to thermal annealing in D{sub 2} atmosphere to promote the metal to deuteride phase transformation. The kinetics of the reverse deuteride to metal transformation was studied by Thermal Desorption Spectroscopy (TDS) while the structure of the as deposited and transformed samples was analyzed by X-rays diffraction and Transmission Electron Microscopy (TEM). In Pd- capped MgD{sub 2} thin films the deuteride to metal transformation begins at the interface between un-reacted Mg and transformed MgD{sub 2} layers. The D{sub 2} desorption kinetics is controlled by MgD{sub 2}/Mg interface effects, specifically the re-growth velocity of the Mg layers. The Mg re-growth has thermally activated character and shows an activation energy value of 1.3 ± 0.1 eV.
Deposition and characterization of aluminum magnesium boride thin film coatings
Tian, Yun
Boron-rich borides are a special group of materials possessing complex structures typically comprised of B12 icosahedra. All of the boron-rich borides sharing this common structural unit exhibit a variety of exceptional physical and electrical properties. In this work, a new ternary boride compound AlMgB14, which has been extensively studied in bulk form due to its novel mechanical properties, was fabricated into thin film coatings by pulsed laser deposition (PLD) technology. The effect of processing conditions (laser operating modes, vacuum level, substrate temperature, and postannealing, etc.) on the composition, microstructure evolution, chemical bonding, and surface morphology of AlMgB14 thin film coatings has been investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), atomic force microscopy (AFM) and Fourier transform infrared (FTIR) spectrometry; the mechanical, electrical, and optical properties of AlMgB14 thin films have been characterized by nanoindentation, four-point probe, van der Pauw Hall measurement, activation energy measurement, and UV-VIS-NIR spectrophotometer. Experimental results show that AlMgB14 films deposited in the temperature range of 300 K - 873 K are amorphous. Depositions under a low vacuum level (5 x 10-5 Torr) can introduce a significant amount of C and O impurities into AlMgB14 films and lead to a complex oxide glass structure. Orthorhombic AlMgB14 phase cannot be obtained by subsequent high temperature annealing. By contrast, the orthorhombic AlMgB 14 crystal structure can be attained via high temperature-annealing of AlMgB14 films deposited under a high vacuum level (boride films, high vacuum level-as deposited AlMgB14 films also possess a low n-type electrical resistivity, which is a consequence of high carrier concentration and moderate carrier mobility. The operative electrical transport mechanism and doping behavior for high vacuum level-as deposited AlMgB14
Effect of solution concentration on MEH-PPV thin films
Affendi, I. H. H.; Sarah, M. S. P.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.
2018-05-01
MEH-PPV thin films were prepared with a mixture of THF (tetrahydrofuran) solution deposited by spin coating method. The surface topology of MEH-PPV thin film were characterize by atomic force microscopy (AFM) and optical properties of absorption spectra were characterized by using Ultraviolet-visible-near-infrared (UV-Vis-NIR). The MEH-PPV concentration variation affects the surface and optical properties of the thin film where 0.5 mg/ml MEH-PPV concentration have a good surface topology provided the same film also gives the highest absorption coefficient were then deposited to a TiO2 thin film forming composite layer. The composite layer then shows low current flow of short circuit current of Isc = -5.313E-7 A.
Ab initio thermodynamics for the growth of ultra-thin Cu film on a perfect Mg O(001) surface
Energy Technology Data Exchange (ETDEWEB)
Zhukovskii, Yuri F. [Institute for Solid State Physics, University of Latvia, Kengaraga str. 8, Riga LV-1063 (Latvia)]. E-mail: quantzh@latnet.lv; Fuks, David [Materials Engineering Department, Ben-Gurion University of the Negev, POB 653, Beer-Sheva IL-84105 (Israel); Kotomin, Eugene A. [Institute for Solid State Physics, University of Latvia, Kengaraga str. 8, Riga LV-1063 (Latvia); Dorfman, Simon [Department of Physics, Israel Institute of Technology-Technion, Haifa IL-32000 (Israel)
2005-12-15
Controlled growth of thin metallic films on oxide substrates is important for numerous micro-and nano electronic applications. Our ab initio study is devoted to the periodic slab simulations for a series of ordered 2a Cu superlattices on the regular Mg O(001) substrate. Submonolayer and monolayer substrate Cu coverages were calculated using the Daft-Gaga method, as implemented into the Crystal-98 code. The results of ab initio calculations have been combined with thermodynamic theory which allows US to predict the growth mode of ultra-thin metal films (spinodal decomposition vs. nucleation-and-growth regime) as a function of the metal coverage and the temperature, and to estimate the metal density in clusters. We show that 3a cluster formation becomes predominant already at low Cu coverages, in agreement with the experiment.
Ab initio thermodynamics for the growth of ultra-thin Cu film on a perfect Mg O(001) surface
International Nuclear Information System (INIS)
Zhukovskii, Yuri F.; Fuks, David; Kotomin, Eugene A.; Dorfman, Simon
2005-01-01
Controlled growth of thin metallic films on oxide substrates is important for numerous micro-and nano electronic applications. Our ab initio study is devoted to the periodic slab simulations for a series of ordered 2a Cu superlattices on the regular Mg O(001) substrate. Submonolayer and monolayer substrate Cu coverages were calculated using the Daft-Gaga method, as implemented into the Crystal-98 code. The results of ab initio calculations have been combined with thermodynamic theory which allows US to predict the growth mode of ultra-thin metal films (spinodal decomposition vs. nucleation-and-growth regime) as a function of the metal coverage and the temperature, and to estimate the metal density in clusters. We show that 3a cluster formation becomes predominant already at low Cu coverages, in agreement with the experiment
Doped indium nitride thin film by sol-gel spin coating method
Lee, Hui San; Ng, Sha Shiong; Yam, Fong Kwong
2017-12-01
In this study, magnesium doped indium nitride (InN:Mg) thin films grown on silicon (100) substrate were prepared via sol-gel spin coating method followed by nitridation process. A custom-made tube furnace was used to perform the nitridation process. Through this method, the low dissociation temperature issue of InN:Mg thin films can be solved. The deposited InN:Mg thin films were investigated using various techniques. The X-rays diffraction results revealed that two intense diffraction peaks correspond to wurtzite structure InN (100), and InN (101) were observed at 29° and 33.1° respectively. Field emission scanning electron microscopy images showed that the surface of the films exhibits densely packed grains. The elemental composition of the deposited thin films was analyzed using energy dispersive X-rays spectroscopy. The detected atomic percentages for In, N, and Mg were 43.22 %, 3.28 %, and 0.61 % respectively. The Raman spectra showed two Raman- and infrared-active modes of E2 (High) and A1 (LO) of the wurtzite InN. The band gap obtained from the Tauc plot showed around 1.74 eV. Lastly, the average surface roughness measured by AFM was around 0.133 µm.
Energy Technology Data Exchange (ETDEWEB)
Cabello, G., E-mail: gerardocabelloguzman@hotmail.com [Departamento de Ciencias Básicas, Facultad de Ciencias, Universidad del Bío-Bío, Chillán (Chile); Lillo, L.; Caro, C.; Seguel, M.; Sandoval, C. [Departamento de Ciencias Básicas, Facultad de Ciencias, Universidad del Bío-Bío, Chillán (Chile); Buono-Core, G.E. [Instituto de Química, Pontificia Universidad Católica de Valparaíso, Valparaíso (Chile); Chornik, B.; Flores, M. [Deparamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Santiago 8370415 (Chile)
2016-05-15
Highlights: • ZnAl{sub 2}O{sub 4} and MgAl{sub 2}O{sub 4} thin films were prepared by photo-chemical method. • The Zn(II), Mg(II) and Al(III) β-diketonate complexes were used as precursors. • The photochemical reaction was monitored by UV–vis and FT-IR spectroscopy. • The results reveal spinel oxide formation and the generation of intermediate products. - Abstract: ZnAl{sub 2}O{sub 4} and MgAl{sub 2}O{sub 4} thin films were grown on Si(100) and quartz plate substrates using a photochemical method in the solid phase with thin films of β-diketonate complexes as the precursors. The films were deposited by spin-coating and subsequently photolyzed at room temperature using 254 nm UV light. The photolysis of these films results in the deposition of metal oxide thin films and fragmentation of the ligands from the coordination sphere of the complexes. The obtained samples were post-annealed at different temperatures (350–1100 °C) for 2 h and characterized by FT-Infrared spectroscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force miscroscopy (AFM), and UV–vis spectroscopy. The results indicate the formation of spinel-type structures and other phases. These characteristics determined the quality of the films, which were obtained from the photodeposition of ternary metal oxides.
Pulsed laser deposition and characterisation of thin superconducting films
Energy Technology Data Exchange (ETDEWEB)
Morone, A [CNR, zona industriale di Tito Scalo, Potenza (Italy). Istituto per i Materiali Speciali
1996-09-01
Same concepts on pulsed laser deposition of thin films will be discussed and same examples of high transition temperature (HTc) BiSrCaCuO (BISCO) and low transition temperature NbN/MgO/NbN multilayers will be presented. X-ray and others characterizations of these films will be reported and discussed. Electrical properties of superconducting thin films will be realized as a function of structural and morphological aspect.
Epitaxial growth of bcc-Fe{sub x}Co{sub 100-x} thin films on MgO(1 1 0) single-crystal substrates
Energy Technology Data Exchange (ETDEWEB)
Ohtake, Mitsuru, E-mail: ohtake@futamoto.elect.chuo-u.ac.j [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Nishiyama, Tsutomu; Shikada, Kouhei [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan); Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan)
2010-07-15
Fe{sub x}Co{sub 100-x} (x=100, 65, 50 at%) epitaxial thin films were prepared on MgO(1 1 0) single-crystal substrates heated at 300 deg. C by ultra-high vacuum molecular beam epitaxy. The film structure and the growth mechanism are discussed. FeCo(2 1 1) films with bcc structure grow epitaxially on MgO(1 1 0) substrates with two types of variants whose orientations are rotated around the film normal by 180 deg. each other for all compositions. Fe{sub x}Co{sub 100-x} film growth follows the Volmer Weber mode. X-ray diffraction analysis indicates the out-of-plane and the in-plane lattice spacings are in agreement with the values of respective bulk Fe{sub x}Co{sub 100-x} crystals with very small errors less than +-0.4%, suggesting the strains in the films are very small. High-resolution cross-sectional transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the film at the Fe{sub 50}Co{sub 50}/MgO interface along the MgO[1 1-bar 0] direction. The presence of such periodical dislocations decreases the large lattice mismatch of about -17% existing at the FeCo/MgO interface along the MgO[1 1-bar 0] direction.
Directory of Open Access Journals (Sweden)
K. Usharani
2015-06-01
Full Text Available Highly conductive and transparent magnesium-doped cadmium oxide (CdO:Mg thin films have been deposited on suitably cleaned glass substrates maintained at 375 °C by spray pyrolysis technique using perfume atomizer. The magnesium content in the films is varied from 0 to 8 at% in steps of 2 at%. The effect of Mg doping on the structural, morphological, optical and electrical properties of the CdO thin films has been studied. All the films exhibited cubic structure with a preferential orientation along the (1 1 1 plane irrespective of the Mg doping level. SEM analysis showed that the film morphology modifies from spherical shaped grains to closely packed cauliflower shaped nanostructures with Mg doping. Except for the film coated with 2 at% Mg dopant, all the other doped films exhibited a blue shift in the optical band gap. Electrical studies revealed that the CdO:Mg film coated with 8 at% Mg dopant had a minimum resistivity of 0.0853×101 Ω-cm.
P-doped strontium titanate grown using two target pulsed laser deposition for thin film solar cells
Man, Hamdi
Thin-film solar cells made of Mg-doped SrTiO3 p-type absorbers are promising candidates for clean energy generation. This material shows p-type conductivity and also demonstrates reasonable absorption of light. In addition, p-type SrTiO3 can be deposited as thin films so that the cost can be lower than the competing methods. In this work, Mg-doped SrTiO3 (STO) thin-films were synthesized and analyzed in order to observe their potential to be employed as the base semiconductor in photovoltaic applications. Mg-doped STO thin-films were grown by using pulsed laser deposition (PLD) using a frequency quadrupled Yttrium Aluminum Garnet (YAG) laser and with a substrate that was heated by back surface absorption of infrared (IR) laser light. The samples were characterized using X-ray photoelectron spectroscopy (XPS) and it was observed that Mg atoms were doped successfully in the stoichiometry. Reflection high energy electron diffraction (RHEED) spectroscopy proved that the thin films were polycrystalline. Kelvin Probe work function measurements indicated that the work function of the films were 4.167 eV after annealing. UV/Vis Reflection spectroscopy showed that Mg-doped STO thin-films do not reflect significantly except in the ultraviolet region of the spectrum where the reflection percentage increased up to 80%. Self-doped STO thin-films, Indium Tin Oxide (ITO) thin films and stainless steel foil (SSF) were studied in order to observe their characteristics before employing them in Mg-doped STO based solar cells. Self-doped STO thin films were grown using PLD and the results showed that they are capable of serving as the n-type semiconductor in solar cell applications with oxygen vacancies in their structure and low reflectivity. Indium Tin Oxide thin-films grown by PLD system showed low 25-50 ?/square sheet resistance and very low reflection features. Finally, commercially available stainless steel foil substrates were excellent substrates for the inexpensive growth of
Thermionic vacuum arc (TVA) technique for magnesium thin film deposition
Energy Technology Data Exchange (ETDEWEB)
Balbag, M.Z., E-mail: zbalbag@ogu.edu.t [Eskisehir Osmangazi University, Education Faculty, Primary Education, Meselik Campus, Eskisehir 26480 (Turkey); Pat, S.; Ozkan, M.; Ekem, N. [Eskisehir Osmangazi University, Art and Science Faculty, Physics Department, Eskisehir 26480 (Turkey); Musa, G. [Ovidius University, Physics Department, Constanta (Romania)
2010-08-15
In this study, magnesium thin films were deposited on glass substrate by the Thermionic Vacuum Arc (TVA) technique for the first time. We present a different technique for deposition of high-quality magnesium thin films. By means of this technique, the production of films is achieved by condensing the plasma of anode material generated using Thermionic Vacuum Arc (TVA) under high vacuum conditions onto the surface to be coated. The crystal orientation and morphology of the deposited films were investigated by using XRD, EDX, SEM and AFM. The aim of this study is to search the use of TVA technique to coat magnesium thin films and to determine some of the physical properties of the films generated. Furthermore, this study will contribute to the scientific studies which search the thin films of magnesium or the compounds containing magnesium. In future, this study will be preliminary work to entirely produce magnesium diboride (MgB{sub 2}) superconductor thin film with the TVA technique.
International Nuclear Information System (INIS)
Su, Bo-Yuan; Chu, Sheng-Yuan; Juang, Yung-Der; Liu, Ssu-Yin
2013-01-01
Graphical abstract: Mg-doped IGZO TFTs showed improved TFT performance and thermal stability due to fewer oxygen deficiencies and less interface electron trapping. Highlights: •We fabricated Mg-doped IGZO TFTs with improved performance using solution-process. •Mg doping reduced the oxygen deficiencies and less interface electron trapping of a-IGZO films. •Mg dope-TFT showed high mobility of 2.35 cm 2 /V s and an on–off current ratio over 10 6 . •For better device stability (gate-bias and thermal stability) was proved. -- Abstract: The effects of magnesium (Mg) doping (molar ratio Mg/Zn = (0–10 at.%)) on solution-processed amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) grown using the sol–gel method are investigated. TFT devices fabricated with Mg-doped films showed an improved field-effect mobility of 2.35 cm 2 /V s and a subthreshold slope (S) of 0.42 V/dec compared to those of an undoped a-IGZO TFT (0.73 cm 2 /V s and 0.74 V/dec, respectively), and an on–off current ratio of over 10 6 . Moreover, the 5 at.% Mg-doped TFT device showed improved gate bias and thermal stability due to fewer oxygen deficiencies, smaller carrier concentration, and less interface electron trapping in the a-IGZO films
Energy Technology Data Exchange (ETDEWEB)
Su, Bo-Yuan [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China); Juang, Yung-Der [Department of Materials Science, National University of Tainan, Tainan 700, Taiwan (China); Liu, Ssu-Yin [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)
2013-12-15
Graphical abstract: Mg-doped IGZO TFTs showed improved TFT performance and thermal stability due to fewer oxygen deficiencies and less interface electron trapping. Highlights: •We fabricated Mg-doped IGZO TFTs with improved performance using solution-process. •Mg doping reduced the oxygen deficiencies and less interface electron trapping of a-IGZO films. •Mg dope-TFT showed high mobility of 2.35 cm{sup 2}/V s and an on–off current ratio over 10{sup 6}. •For better device stability (gate-bias and thermal stability) was proved. -- Abstract: The effects of magnesium (Mg) doping (molar ratio Mg/Zn = (0–10 at.%)) on solution-processed amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) grown using the sol–gel method are investigated. TFT devices fabricated with Mg-doped films showed an improved field-effect mobility of 2.35 cm{sup 2}/V s and a subthreshold slope (S) of 0.42 V/dec compared to those of an undoped a-IGZO TFT (0.73 cm{sup 2}/V s and 0.74 V/dec, respectively), and an on–off current ratio of over 10{sup 6}. Moreover, the 5 at.% Mg-doped TFT device showed improved gate bias and thermal stability due to fewer oxygen deficiencies, smaller carrier concentration, and less interface electron trapping in the a-IGZO films.
Varilci, A; Gorur, O; Celebi, S; Karaca, I
2002-01-01
Superconducting BiPbSrCaCuO thin films were prepared on MgO(001) and Ag/MgO substrates using an electron beam (e-beam) evaporation technique. The effects of annealing temperature and Ag diffusion on the crystalline structure and some superconducting properties, respectively, were investigated by X-ray diffraction, atomic force microscopy, and by measurements of the critical temperature and the critical current density. It was shown that an annealing of both types of films at 845 or 860 C resulted in the formation of mixed Bi-2223 and Bi-2212 phases with a high degree of preferential orientation with the c-axis perpendicular to the substrates. The slight increase of the critical temperature from 103 K to 105 K, the enhancement of the critical current density from 2 x 10 sup 3 to 6 x 10 sup 4 A/cm sup 2 , and the improved surface smoothness are due to a possible silver doping from the substrate. (Abstract Copyright [2002], Wiley Periodicals, Inc.)
Processing and properties of Pb(Mg(1/3)Nb(2/3))O3--PbTiO3 thin films by pulsed laser deposition
Tantigate, C.; Lee, J.; Safari, A.
1995-03-01
The objectives of this study were to prepare in situ Pb(Mg(1/3)Nb(2/3))O3 (PMN) and PMN-PT thin films by pulsed laser deposition and to investigate the electrical features of thin films for possible dynamic random access memory (DRAM) and microactuator applications. The impact of processing parameters such compositions, substrate temperature, and oxygen pressure on perovskite phase formation and dielectric characteristics were reported. It was found that the highest dielectric constant, measured at room temperature and 10 kHz, was attained from the PMN with 99% perovskite.
The road to magnesium diboride thin films, Josephson junctions and SQUIDs
International Nuclear Information System (INIS)
Brinkman, Alexander; Mijatovic, Dragana; Hilgenkamp, Hans; Rijnders, Guus; Oomen, Ingrid; Veldhuis, Dick; Roesthuis, Frank; Rogalla, Horst; Blank, Dave H A
2003-01-01
The remarkably high critical temperature at which magnesium diboride (MgB 2 ) undergoes transition to the superconducting state, T c ∼ 40 K, has aroused great interest and has encouraged many groups to explore the properties and application potential of this novel superconductor. For many electronic applications and further basic studies, the availability of superconducting thin films is of great importance. Several groups have succeeded in fabricating superconducting MgB 2 films. An overview of the deposition techniques for MgB 2 thin film growth will be given, with a special focus on the in situ two-step process. Although, meanwhile, many problems to obtain suitable films have been solved, such as oxygen impurities and magnesium volatility, the question of how single-phase epitaxial films can be grown still remains. The possibility of growing single-crystalline epitaxial films will be discussed from the deposition conditions' point of view as well as substrate choice. Necessary conditions are discussed and possible routes are reviewed. The applicability of MgB 2 in superconducting electronic devices depends on the possibility of making well-controlled, i.e., reproducible and stable, Josephson junctions. The first attempts to make MgB 2 -MgO-MgB 2 ramp-type junctions and SQUIDs from MgB 2 nanobridges are discussed
Low-cost growth of magnesium doped gallium nitride thin films by sol-gel spin coating method
Amin, N. Mohd; Ng, S. S.
2018-01-01
Low-cost sol-gel spin coating growth of magnesium (Mg) doped gallium nitride (GaN) thin films with different concentrations of Mg was reported. The effects of the Mg concentration on the structural, surface morphology, elemental compositions, lattice vibrational, and electrical properties of the deposited films were investigated. X-ray diffraction results show that the Mg-doped samples have wurtzite structure with preferred orientation of GaN(002). The crystallite size decreases and the surface of the films with pits/pores were formed, while the crystalline quality of the films degraded as the Mg concentration increases from 2% to 6. %. All the Raman active phonon modes of the wurtzite GaN were observed while a broad peak attributed to the Mg-related lattice vibrational mode was detected at 669 cm-1. Hall effect results show that the resistivity of the thin films decreases while the hole concentration and hall mobility of thin films increases as the concentration of the Mg increases.
International Nuclear Information System (INIS)
Jung, Hyun Suk; Lee, J.-K.; Young Kim, J.; Hong, Kug Sun
2003-01-01
The effects of diethanolamine (DEA) addition on the crystallization behavior of magnesium methoxide and the stabilization behavior of the Mg-alkoxide were investigated using differential scanning calorimetry, thermogravimetry, X-ray powder diffraction, transmission electron microscopy, and X-ray photoemission spectroscopy. 20 mol% DEA additions to magnesium methoxide showed enhanced stability such that a time-dependent change in the sol was not observed in air. Moreover, the DEA addition enhanced the crystallization process. Crystalline MgO in the 20 mol% of DEA-added magnesium methoxide powder was observed at 300 deg. C for samples processed in O 2 and a high degree of crystallinity was observed at 400 deg. C when processed in O 2 . The enhanced crystallization of Mg-methoxide with added DEA in O 2 is discussed in terms of structural relaxation and heat generation during the ignition of an organic species of DEA. Using a DEA added sol, a MgO thin film with a high degree of crystallinity was prepared at 400 deg. C in O 2
Energy Technology Data Exchange (ETDEWEB)
Tseng, Ching-Fang, E-mail: cftseng@nuu.edu.tw; Chen, Wen-Shiush; Lee, Chih-Wen
2011-05-31
Optical properties and microstructures of Mg(Zr{sub 0.05}Ti{sub 0.95})O{sub 3} thin films prepared by sol-gel method on n-type Si(100) substrates at different annealing temperatures have been investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscope (AFM) were found to be sensitive to the deposition conditions, such as annealing temperature (600-800 deg. C). The optical transmittance spectra of the Mg(Zr{sub 0.05}Ti{sub 0.95})O{sub 3} thin films were measured by using UV-visible recording spectro-photometer. The diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited Mg(Zr{sub 0.05}Ti{sub 0.95})O{sub 3} peaks orientation perpendicular to the substrate surface and the grain size with the increase in the annealing temperature. The dependence of the microstructure and dielectric characteristics on annealing temperature was also investigated.
Magnetic and magneto-optical properties of FeRh thin films
International Nuclear Information System (INIS)
Inoue, Sho; Nam, Nguyen T.; Phuoc, Nguyen N.; Cao Jiangwei; Yu Ko, Hnin Yu; Suzuki, Takao
2008-01-01
The magnetic and magneto-optical properties of FeRh thin films epitaxially deposited onto MgO(1 0 0) substrates by RF sputter-deposition system have been investigated in conjunction with the structure. An intriguing virgin effect has been found in the M-T curves of the as-deposited FeRh thin films, which is presumably interpreted in term of a change in structural phase when heating. Also, a (negative) maximum peak of Kerr rotation at around 3.8 eV has been observed when FeRh thin films are in ferromagnetic state. The polar Kerr rotation angle is found to increase at temperatures above 100 deg. C, which corresponds to the antiferromagnet (AF)-ferromagnet (FM) transition of FeRh thin films
Pivak, Y.; Schreuders, H.; Dam, B.
2012-01-01
Using hydrogenography, we investigate the thermodynamic parameters and hysteresis behavior in Mg thin films capped by Ta/Pd, in a temperature range from 333 K to 545 K. The enthalpy and entropy of hydride decomposition, ?Hdes = ?78.3 kJ/molH2, ?Sdes = ?136.1 J/K molH2, estimated from the Van't Hoff
Solid thin film materials for use in thin film charge-coupled devices
International Nuclear Information System (INIS)
Lynch, S.J.
1983-01-01
Solid thin films deposited by vacuum deposition were evaluated to ascertain their effectiveness for use in the manufacturing of charge-coupled devices (CCDs). Optical and electrical characteristics of tellurium and Bi 2 Te 3 solid thin films were obtained in order to design and to simulate successfully the operation of thin film (TF) CCDs. In this article some of the material differences between single-crystal material and the island-structured thin film used in TFCCDs are discussed. The electrical parameters were obtained and tabulated, e.g. the mobility, conductivity, dielectric constants, permittivity, lifetime of holes and electrons in the thin films and drift diffusion constants. The optical parameters were also measured and analyzed. After the design was complete, experimental TFCCDs were manufactured and were successfully operated utilizing the aforementioned solid thin films. (Auth.)
Nanoporous cerium oxide thin film for glucose biosensor.
Saha, Shibu; Arya, Sunil K; Singh, S P; Sreenivas, K; Malhotra, B D; Gupta, Vinay
2009-03-15
Nanoporous cerium oxide (CeO(2)) thin film deposited onto platinum (Pt) coated glass plate using pulsed laser deposition (PLD) has been utilized for immobilization of glucose oxidase (GOx). Atomic force microscopy studies reveal the formation of nanoporous surface morphology of CeO(2) thin film. Response studies carried out using differential pulsed voltammetry (DPV) and optical measurements show that the GOx/CeO(2)/Pt bio-electrode shows linearity in the range of 25-300 mg/dl of glucose concentration. The low value of Michaelis-Menten constant (1.01 mM) indicates enhanced enzyme affinity of GOx to glucose. The observed results show promising application of the nanoporous CeO(2) thin film for glucose sensing application without any surface functionalization or mediator.
Energy Technology Data Exchange (ETDEWEB)
Xie, Wuze; Jiao, Shujie, E-mail: shujiejiao@gmail.com; Wang, Dongbo; Gao, Shiyong; Wang, Jinzhong; Yu, Qingjiang; Li, Hongtao
2017-05-31
Highlights: • MgNiO thin films were fabricated by radio frequency magnetron sputtering. • The structure and optical properties of MgNiO films were studied. • The mechanism of phase separation was discussed in detail. • The effect of different sputtering pressure also was discussed. - Abstract: In this study, MgNiO thin films were grown on quartz substrates by radio frequency (RF) magnetron sputtering. The influence of different sputtering pressures on the crystalline and optical properties of MgNiO thin films has been studied. X-ray diffraction measurement indicates that the MgNiO films are cubic structure with (200) preferred orientation. UV–vis transmission spectra show that all the MgNiO thin films show more than 75% transmission at visible region, and the absorption edges of all thin films locate at solar-blind region (220 nm–280 nm). The lattice constant and Mg content of MgNiO samples were calculated using X-ray diffraction and transmission spectra data. The phase separation is observed both in the X-ray diffraction patterns and transmission spectra, and the phase separation is studied in detail based on the crystal growth theory and sputtering process.
International Nuclear Information System (INIS)
Martínez, Omar S.; Millán, Aduljay Remolina; Huerta, L.; Santana, G.; Mathews, N.R.; Ramon-Garcia, M.L.; Morales, Erik R.; Mathew, X.
2012-01-01
Highlights: ► Thin films of Cd 1−x Mg x Te with high spatial uniformity and band gap in the range of 1.6–1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg. ► Obtained Cd 1−x Mg x Te films have the structural characteristics of the CdTe, evidence of the change in atomic scattering due to incorporation of Mg was observed. ► XRD and XPS data confirmed the incorporation of Mg in the lattice of CdTe. ► SEM images revealed the impact of Mg incorporation on the morphology of the films, the changes in grain size and grain morphology are noticeable. - Abstract: Thin films of Cd 1−x Mg x Te with band gap in the range of 1.6–1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg on glass substrates heated at 300 °C. Different experimental techniques such as XRD, UV–vis spectroscopy, SEM, and XPS were used to study the effect of Mg incorporation into the lattice of CdTe. The band gap of the films showed a clear tendency to increase as the Mg content in the film is increased. The Cd 1−x Mg x Te films maintain all the structural characteristics of the CdTe, however, diminishing of intensity for the XRD patterns is observed due to both change in preferential orientation and change in atomic scattering due to the incorporation of Mg. SEM images showed significant evidences of morphological changes due to the presence of Mg. XRD, UV–vis spectroscopy, and XPS data confirmed the incorporation of Mg in the lattice of CdTe. The significant increase in band gap of CdTe due to incorporation of Mg suggests that the Cd 1−x Mg x Te thin film is a candidate material to use as absorber layer in the top-cell of a tandem solar cell.
Thin-film photovoltaic technology
Energy Technology Data Exchange (ETDEWEB)
Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)
2010-07-01
The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.
Theoretical study of the multiferroic properties in M-doped (M=Co, Cr, Mg) ZnO thin films
Energy Technology Data Exchange (ETDEWEB)
Bahoosh, S.G. [Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany); Apostolov, A.T. [University of Architecture, Civil Engineering and Geodesy, Faculty of Hydrotechnics, Department of Physics, 1, Hristo Smirnenski Blvd., 1046 Sofia (Bulgaria); Apostolova, I.N. [University of Forestry, Faculty of Forest Industry, 10, Kl. Ohridsky Blvd., 1756 Sofia (Bulgaria); Trimper, S. [Institute of Physics, Martin-Luther-University, D-06099 Halle (Germany); Wesselinowa, Julia M. [University of Sofia, Department of Physics, Blvd. J. Bouchier 5, 1164 Sofia (Bulgaria)
2015-01-01
The origin of multiferroism is still an open problem in ZnO. We propose a microscopic model to clarify the occurrence of multiferroism in this material. Using Green's function technique we study the influence of ion doping and size effects on the magnetization and polarization of ZnO thin films. The calculations for magnetic Co- and Cr-ions are based on the s–d model, the transverse Ising model in terms of pseudo-spins and a biquadratic magnetoelectric coupling, whereas in case of nonmagnetic Mg-ions the model takes into account the Coulomb interaction and an indirect coupling between the pseudo-spins via the conduction electrons. We show that the magnetization M exhibits a maximum for a fixed concentration of the doping ions. Furthermore M increases with decreasing film thickness N. The polarization increases with increasing concentration of the dopant and decreasing N. The results are in good agreement with the experimental data. - Highlights: • The paper analyzes the multiferroic properties of doped ZnO thin films by a microscopic model. • The magnetization exhibits a maximum at a fixed doping concentration. • The polarization increases with growing dopant concentration. • The ferroelectric transition temperature is enhanced for increasing dopant concentration.
Structural and biocompatible characterization of TiC/a:C nanocomposite thin films
International Nuclear Information System (INIS)
Balázsi, K.; Vandrovcová, M.; Bačáková, L.; Balázsi, Cs.
2013-01-01
In this work, sputtered TiC/amorphous C thin films have been developed in order to be applied as potential barrier coating for interfering of Ti ions from pure Ti or Ti alloy implants. Our experiments were based on magnetron sputtering method, because the vacuum deposition provides great flexibility for manipulating material chemistry and structure, leading to films and coatings with special properties. The films have been deposited on silicon (001) substrates with 300 nm thick oxidized silicon sublayer at 200 °C deposition temperature as model substrate. Transmission electron microscopy has been used for structural investigations. Thin films consisted of ∼ 20 nm TiC columnar crystals embedded by 5 nm thin amorphous carbon matrix. MG63 osteoblast cells have been applied for in vitro study of TiC nanocomposites. The cell culture tests give strong evidence of thin films biocompatibility. Highlights: ► The main goal of this work is the relatively easy preparation of nanocomposite TiC thin films by dc magnetron sputtering. ► TEM and HREM were applied for structural characterization of columnar TiC nanocrystals and amorphous carbon matrix. ► The biocompatibility of films was showed by MG63 human osteoblast like cells during 1, 3 and 7 days seeding
Kern, Werner
1991-01-01
This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever
Co2FeAl Heusler thin films grown on Si and MgO substrates: Annealing temperature effect
International Nuclear Information System (INIS)
Belmeguenai, M.; Tuzcuoglu, H.; Zighem, F.; Chérif, S. M.; Moch, P.; Gabor, M. S.; Petrisor, T.; Tiusan, C.
2014-01-01
10 nm and 50 nm Co 2 FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to CFA(001)[110]//MgO(001)[100] epitaxial relation) for CFA films grown on a Si and on a MgO substrate, respectively. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (T a ), while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing T a , while the uniaxial anisotropy field is nearly unaffected by T a within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with T a . Finally, the FMR linewidth decreases when increasing T a , due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.1×10 −3 and 1.3×10 −3 for films of 50 nm thickness annealed at 615 °C grown on MgO and on Si, respectively)
International Nuclear Information System (INIS)
Auzary, S.; Pailloux, F.; Denanot, M.F.; Gaboriaud, R.J.
1998-01-01
Detailed microstructural aspects of the interface between YBaCuO thin films and MgO substrate are studied by means of a Fourier analysis of Moire fringe pattern obtained from HRTEM investigations of plan view samples. The main features of the observations are large, well oriented crystallographic domains surrounded by wide boundaries. HRTEM investigations together with the Fourier analysis show evidence of both orthorhombic and pseudo-tetragonal structure in the YBaCuO film. An accommodation mechanism is suggested from the Fourier analysis of the Moire fringe pattern. (orig.)
Study the Effect of Mg O on the Photo catalysis of Zn O Thin Layers
International Nuclear Information System (INIS)
Zaghlool, R.A.I.M.
2011-01-01
The removal of the non-biodegradable organic chemicals is a crucial ecological problem. Dyes are an important class of synthetic organic compounds used in the textile industry and are therefore common industrial pollutants. Due to the stability of modern dyes, conventional biological treatment methods for industrial wastewater are ineffective resulting often in an intensively colored discharge from the treatment facilities. Heterogeneous photo catalysis by semiconductor films is a promising technology for the reduction of global environmental pollutants. Zn O has received much attention in the degradation and complete mineralization of environmental pollutants. In order to improve the properties of the films, several techniques such as sputtering, thermal evaporation and spray pyrolysis have been applied for the production of Zn O. Spray pyrolysis technique is preferred among these techniques. It is less expensive, simpler and more versatile than all the other techniques, which allows the possibility of obtaining large area films with the required properties for different applications. In order to improve the photo catalytic efficiency of Zn O films, the particle sizes, morphologies, surface properties, and electronic structure have to be changed. This can be done by doping with some metals. In this work, Mg was doped into Zn O thin films. Zn 1x Mg x O thin films are prepared by spray pyrolysis method on glass substrates. The deposition temperature was 500 °C. Mg concentration was varied in the range of 0.0 to 0.3 in intervals of 0.05. The pure Zn O films were polycrystalline with preferred orientation (100). Zn 1x Mg x O films become amorphous with increasing Mg concentration. The grain size decreased with increasing Mg content. Also, doping with Mg has increased the surface roughness of the films. The optical band gap of Zn 1x Mg x O changes from 3.26 to 3.48 eV with increasing Mg content. The refractive index has been decreased but the extinction coefficient
Structural and optical properties of magnetron sputtered MgxZn1-xO thin films
International Nuclear Information System (INIS)
Kumar, Sanjeev; Gupte, Vinay; Sreenivas, K
2006-01-01
Mg x Zn 1-x O (MZO) thin films prepared by an rf magnetron sputtering technique are reported. The films were grown at room temperature and at relatively low rf power of 50 W. MZO thin films were found to possess preferred c-axis orientation and exhibited hexagonal wurtzite structure of ZnO up to a Mg concentration of 42 mol%. A small variation in the c-axis lattice parameter of around 0.3% was observed with increasing Mg composition, showing the complete solubility of Mg in ZnO. The band gap of the MZO films in the wurtzite phase varied linearly with the Mg concentration and a maximum band gap ∼4.19 eV was achieved at x = 0.42. The refractive indices of the MgO films were found to decrease with increasing Mg content. The observed optical dispersion data are in agreement with the single oscillator model. A photoluminescence study revealed a blue shift in the near band edge emission peak with increasing Mg content in the MZO films. The results show the potential of MZO films in various opto-electronic applications
The microwave surface impedance of MgB2 thin films
International Nuclear Information System (INIS)
Purnell, A J; Zhukov, A A; Nurgaliev, T; Lamura, G; Bugoslavsky, Y; Lockman, Z; MacManus-Driscoll, J L; Zhai, H Y; Christen, H M; Paranthaman, M P; Lowndes, D H; Jo, M H; Blamire, M G; Hao, Ling; Gallop, J C; Cohen, L F
2003-01-01
In this paper we present the results of measurements of the microwave surface impedance of a powder sample and two films of MgB 2 . The powder sample has a T c = 39 K and the films have T c = 29 K and 38 K. These samples show different temperature dependences of the field penetration depth. Over a period of six months, the film with T c = 38 K degraded to a T c of 35 K. We compare the results on all samples with data obtained elsewhere and discuss the implications as far as is possible at this stage
Effect of concurrent Mg/Nb-doping on dielectric properties of Ba0.45Sr0.55TiO3 thin films
Alema, Fikadu; Reich, Michael; Reinholz, Aaron; Pokhodnya, Konstantin
2013-08-01
Composition, microstructure, and dielectric properties of undoped and Ba(Mg1/3Nb2/3)O3 (BMN) doped Ba0.45Sr0.55TiO3 (BST) thin films deposited via rf. magnetron sputtering on platinized alumina substrates have been investigated. The analysis of microstructure has shown that despite the sizable effect of doping on the residual stress, the latter is partially compensated by the thermal expansion coefficient mismatch, and its influence on the BST film crystal structure is insignificant. It was revealed that BMN doped film demonstrated an average (over 2000 devices) of 52.5% tunability at 640 kV/cm, which is ˜8% lower than the value for the undoped film. This drop is associated with the presence of Mg ions in BMN; however, the effect of Mg doping is partially compensated by that of Nb ions. The decrease in grain size upon doping may also contribute to the tunability drop. Doping with BMN allows achievement of a compensation concentration yielding no free carriers and resulting in significant leakage current reduction when compared with the undoped film. In addition, the presence of large amounts of empty shallow traps related to NbTi• allows localizing free carriers injected from the contacts thus extending the device control voltage substantially above 10 V.
Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)
2010-01-01
A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.
Wide bandgap Mg-doped ZnAlO thin films for optoelectronic applications
International Nuclear Information System (INIS)
Gupta, R.K.; Ghosh, K.; Patel, R.; Kahol, P.K.
2009-01-01
Magnesium-doped ZnAlO thin films were grown on quartz substrate by ablating the sintered target with a KrF excimer laser. The effect of growth temperature from 30 deg. C to 700 deg. C on structural, optical, and electrical properties has been studied. These films are highly transparent in visible spectrum with average transmittance of 82%. The films grown at low temperature are amorphous while films grown at high temperature are crystalline in nature. These films are highly oriented along (0 0 2) direction. The electrical conductivity, carrier concentration, and electron mobility is found to increase with increase in temperature and then decreases with further increase in temperature. The bandgap is found to vary from 3.86 eV to 4.00 eV for various films
Thermal expansion coefficients of obliquely deposited MgF2 thin films and their intrinsic stress.
Jaing, Cheng-Chung
2011-03-20
This study elucidates the effects of columnar angles and deposition angles on the thermal expansion coefficients and intrinsic stress behaviors of MgF2 films with columnar microstructures. The behaviors associated with temperature-dependent stresses in the MgF2 films are measured using a phase-shifting Twyman-Green interferometer with a heating stage and the application of a phase reduction algorithm. The thermal expansion coefficients of MgF2 films at various columnar angles were larger than those of glass substrates. The intrinsic stress in the MgF2 films with columnar microstructures was compressive, while the thermal stress was tensile. The thermal expansion coefficients of MgF2 films with columnar microstructures and their intrinsic stress evidently depended on the deposition angle and the columnar angle.
Indian Academy of Sciences (India)
microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...
Magneto-transport and thermoelectric properties of epitaxial FeSb{sub 2} thin film on MgO substrate
Energy Technology Data Exchange (ETDEWEB)
Duong, Anh Tuan; Rhim, S. H., E-mail: sonny@ulsan.ac.kr; Shin, Yooleemi; Nguyen, Van Quang; Cho, Sunglae, E-mail: slcho@ulsan.ac.kr [Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749 (Korea, Republic of)
2015-01-19
We report magneto-transport and thermoelectric properties of FeSb{sub 2} thin film epitaxially grown on the MgO substrate using molecular beam epitaxy. The film exhibits compressive strain of 1.74% owing to large lattice mismatch, whose physical consequences are nontrivial. Magnetic phase has been changed from diamagnetic in bulk, as evidenced by anomalous Hall effect (AHE) and negative magneto-resistance (MR). The FeSb{sub 2} film is semiconducting without any metallic transition unlike the bulk counterpart. In particular, hysteresis in MR with distinct feature of AHE is evident with coercive field of 500 and 110 Oe for T = 20 and 50 K, respectively. Furthermore, from the Seebeck coefficients and temperature dependence of the resistivity, it is evident that the film is semiconducting with small band gap: 3.76 meV for T < 40 K and 13.48 meV for T > 40 K, respectively, where maximum thermoelectric power factor of 12 μV/cm·K at T = 50 K.
Energy Technology Data Exchange (ETDEWEB)
Harrower, Christopher; Kalisvaart, Peter; Mitlin, David [Chemical and Materials Engineering, University of Alberta, Alberta T6G 2V4 (Canada); National Research Council Canada, National Institute for Nanotechnology, Edmonton, Alberta T6G 2M9 (Canada); Poirier, Eric; Fritzsche, Helmut [National Research Council Canada, SIMS, Canadian Neutron Beam Centre, Chalk River, Ontario K0J 1J0 (Canada); Satija, Sushil [National Institute of Standards and Technology, Center for Neutron Research, Gaithersburg, MD 20899 (United States); Akgun, Bulent [National Institute of Standards and Technology, Center for Neutron Research, Gaithersburg, MD 20899 (United States); Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742 (United States)
2010-10-15
Deuterium absorption in Mg{sub 70}Al{sub 30} thin films coated with a Pd layer and a Ta/Pd bilayer were investigated using in situ neutron reflectometry at room temperature and deuterium pressures up to 1.3 bar. The approach used provides a detailed profile, at the nanoscale, of the deuterium content inside the specific layers that constitute the films. It is found that Mg{sub 70}Al{sub 30} can store up to 5 wt.% under these mild conditions following a two-step mechanism. The latter involves the deuteration of the top and bottom catalyst layers first, followed by the main Mg{sub 70}Al{sub 30} layer. The presence of deuterium throughout the films in the early absorption stages evidences atomic deuterium spillover from the catalyst layers. The addition of a Ta layer between the Pd and Mg{sub 70}Al{sub 30} was found to allow observable absorption at a pressure 10 times lower than on the Ta-free sample, without affecting the storage capacity. Our measurements imply that this improvement in kinetics is due to a lowering of the nucleation barrier for the formation of the hydride phase in the Mg{sub 70}Al{sub 30} layer. (author)
Preparation of PZT thin films on YBCO electrodes by KrF excimer laser ablation technique
International Nuclear Information System (INIS)
Kurogi, H.; Yamagata, Y.; Ebihara, K.
1998-01-01
Pb(Zr X Ti 1-X )O 3 (PZT) films have excellent ferroelectric, optical, piezoelectric, and pyroelectric properties. We prepared PZT thin films by the excimer laser ablation technique. A pulsed KrF excimer laser (Lambda Physik LPX305icc, pulse duration of 25 ns, λ=248 nm, 850 mJ Max.) was used to ablate the bulk targets. We investigated the influence of bottom electrode materials on the characteristics of the PZT thin films prepared on Pt and YBCO underlayers. The X-ray diffraction (XRD) patterns showed that the PZT films prepared with a laser fluence of 2 Jcm -2 on YBCO/MgO(100) substrate at a wide temperature range of 550-680 C have a perovskite (001) structure. At the same laser fluence, the PZT films prepared on Pt/MgO(100) substrate have a perovskite (001) structure only at 650 C. The polarization-electric field (P-E) characteristics and fatigue properties of PZT thin films were measured by the Sawyer-Tower circuit. The remnant polarization and coercive field have been found to be P r =15 μC cm -2 , 30 μC cm -2 and E c =200 kV cm -1 , 100 kV cm -1 for Au/PZT/Pt/MgO and Au/PZT/YBCO/MgO correspondingly. The remnant polarization of Au/PZT/YBCO/MgO thin film was reduced to one-half after about 10 8 cycles of switching. (orig.)
Surface, interface and thin film characterization of nano-materials using synchrotron radiation
International Nuclear Information System (INIS)
Kimura, Shigeru; Kobayashi, Keisuke
2005-01-01
From the results of studies in the nanotechnology support project of the Ministry of Education, Culture, Sports, Science and Technology of Japan, several investigations on the surface, interface and thin film characterization of nano-materials are described; (1) the MgB 2 thin film by X-ray diffraction, (2) the magnetism of the Pt thin film on a Co film by X-ray magnetic circular dichroism measurement, (3) the structure and physical properties of oxygen molecules absorbed in a micro hole of the cheleted polymer crystal by the direct observation in X-ray powder diffraction, and (4) the thin film gate insulator with a large dielectric constant, thermally treated HfO 2 /SiO 2 /Si, by X-ray photoelectron spectroscopy. (M.H.)
Magnesium Diboride thin Films, multilayers, and coatings for SRF cavities
Energy Technology Data Exchange (ETDEWEB)
Xi, Xiaoxing [Temple Univ., Philadelphia, PA (United States)
2017-08-17
Superconducting radio frequency (SRF) cavities currently use low-temperature superconductor niobium, and the Nb SRF cavities have approached the performance levels predicted theoretically. Compared to Nb, MgB2 becomes superconducting at a much higher temperature and promises a better RF performance in terms of higher quality factor Q and higher acceleration capability. An MgB2 SRF technology can significantly reduce the operating costs of particle accelerators when these potentials are realized. This project aimed to advance the development of an MgB2 SRF technology. It had two main objectives: (1) materials issues of MgB2 thin films and multilayers related to their applications in SRF cavities; and (2) coating single-cell cavities for testing at RF frequencies. The key technical thrust of the project is the deposition of high quality clean MgB2 films and coatings by the hybrid physical-chemical vapor deposition (HPCVD) technique, which was developed in my group. We have achieved technical progress in each of the two areas. For the first objective, we have confirmed that MgB2 thin film coatings can be used to effectively enhance the vortex penetration field of an SRF cavity. A vortex is a normal region in the shape of spaghetti that threads through a superconductor. Its existence is due to an applied magnetic field that is greater than a so-called lower critical field, Hc1. Once a vortex enters the superconductor, its movement leads to loss. This has been shown to be the reason for an SRF cavity to break down. Thus, enhancing the magnetic field for a vortex to enter the superconductor that forms the SRF cavity has be a goal of intense research. To this end, Gurevich proposed that a coating of thin superconductor layer can impede the vortex entrance. In this project, we have done two important experiment to test this concept. One, we showed that the enhancement of Hc1 can be
Energy Technology Data Exchange (ETDEWEB)
Beringer, Douglas [College of William and Mary, Williamsburg, VA (United States)
2017-08-01
Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory’s CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater performance benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency – 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m – there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (≈ 45 MV/m for Nb) where inevitable thermodynamic breakdown occurs. With state of the art Nb based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio frequency applications. Correlated studies on structure, surface morphology and superconducting properties of epitaxial Nb and MgB2 thin films are presented.
Co{sub 2}FeAl Heusler thin films grown on Si and MgO substrates: Annealing temperature effect
Energy Technology Data Exchange (ETDEWEB)
Belmeguenai, M., E-mail: belmeguenai.mohamed@univ-paris13.fr; Tuzcuoglu, H.; Zighem, F.; Chérif, S. M.; Moch, P. [LSPM (CNRS-UPR 3407), 99 avenue Jean-Baptiste Clément, Université Paris 13, 93430 Villetaneuse (France); Gabor, M. S., E-mail: mihai.gabor@phys.utcluj.ro; Petrisor, T. [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Str. Memorandumului No. 28 RO-400114 Cluj-Napoca (Romania); Tiusan, C. [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Str. Memorandumului No. 28 RO-400114 Cluj-Napoca (Romania); Institut Jean Lamour, CNRS, Université de Nancy, BP 70239, F–54506 Vandoeuvre (France)
2014-01-28
10 nm and 50 nm Co{sub 2}FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to CFA(001)[110]//MgO(001)[100] epitaxial relation) for CFA films grown on a Si and on a MgO substrate, respectively. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (T{sub a}), while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing T{sub a}, while the uniaxial anisotropy field is nearly unaffected by T{sub a} within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with T{sub a}. Finally, the FMR linewidth decreases when increasing T{sub a}, due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.1×10{sup −3} and 1.3×10{sup −3} for films of 50 nm thickness annealed at 615 °C grown on MgO and on Si, respectively)
International Nuclear Information System (INIS)
Dudney, Nancy J.
2008-01-01
Thin film batteries are built layer by layer by vapor deposition. The resulting battery is formed of parallel plates, much as an ordinary battery construction, just much thinner. The figure (Fig. 1) shows an example of a thin film battery layout where films are deposited symmetrically onto both sides of a supporting substrate. The full stack of films is only 10 to 15 (micro)m thick, but including the support at least doubles the overall battery thickness. When the support is thin, the entire battery can be flexible. At least six companies have commercialized or are very close to commercializing such all-solid-state thin film batteries and market research predicts a growing market and a variety of applications including sensors, RFID tags, and smarter cards. In principle with a large deposition system, a thin film battery might cover a square meter, but in practice, most development is targeting individual cells with active areas less than 25 cm 2 . For very small battery areas, 2 , microfabrication processes have been developed. Typically the assembled batteries have capacities from 0.1 to 5 mAh. The operation of a thin film battery is depicted in the schematic diagram (Fig. 2). Very simply, when the battery is allowed to discharge, a Li + ion migrates from the anode to the cathode film by diffusing through the solid electrolyte. When the anode and cathode reactions are reversible, as for an intercalation compound or alloy, the battery can be recharged by reversing the current. The difference in the electrochemical potential of the lithium determines the cell voltage. Most of the thin films used in current commercial variations of this thin film battery are deposited in vacuum chambers by RF and DC magnetron sputtering and by thermal evaporation onto unheated substrates. In addition, many publications report exploring a variety of other physical and chemical vapor deposition processes, such as pulsed laser deposition, electron cyclotron resonance sputtering, and
Investigation of blue luminescence in Mg doped AlN films
Energy Technology Data Exchange (ETDEWEB)
Sun, Xiliang; Xiong, Juan, E-mail: xiongjuana@163.com; Zhang, Weihai; Liu, Lei; Gu, Haoshuang, E-mail: guhsh@hubu.edu.cn
2015-02-05
Highlights: • AlN films doped with 0.8–4.4 at.% Mg were deposited by magnetron sputtering. • Structural and photoluminescence properties of Mg-doped AlN films were synthesized in detailed. • A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. • An enhancement of A1 (TO) mod and a slightly blue-shift of E2 (high) mode were observed. - Abstract: The Al{sub 1−x}Mg{sub x}N thin films were deposited on (1 0 0) silicon substrates by magnetron sputtering. The structural and photoluminescence properties of the films with varying Mg concentrations were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectra and photoluminescence (PL), respectively. The results clearly showed that the Mg atoms successfully incorporated into AlN, while the crystal structure of the films was maintained. The Raman spectra of Al{sub 1−x}Mg{sub x}N films reveals the enhancement of A{sub 1} (TO) mode, a slightly blue-shift and an augment in FWHM for E{sub 2} (high) phonon mode with increasing Mg content, which can be associated with the deterioration of (0 0 2) orientation and the appearance of (1 0 0) orientation. A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. It was suggested that the transitions from the shallow donor level not only to the ground state but also to the excited states of the deep level was responsible for the broad blue emission band. This work indicates the AlN film for the application in lighting emission devices.
Uniaxial anisotropy in magnetite thin film-Magnetization studies
International Nuclear Information System (INIS)
Wiechec, A.; Korecki, J.; Handke, B.; Kakol, Z.; Owoc, D.; Antolak, D.A.; Kozlowski, A.
2006-01-01
Magnetization and electrical resistivity measurements have been performed on a stoichiometric single crystalline magnetite Fe 3 O 4 thin film (thickness of ca. 500 nm) MBE deposited on MgO (1 0 0) substrate. The aim of these studies was to check the influence of preparation method and sample form (bulk vs. thin film) on magnetic anisotropy properties in magnetite. The film magnetization along versus applied magnetic field has been determined both in the direction parallel and perpendicular to the film surface, and at temperatures above and below the Verwey transition. We have found, in agreement with published results, that the in-plane field of 10 kOe was not sufficient to saturate the sample. This can be understood if some additional factor, on top of the bulk magnetocrystalline anisotropy, is taken into account
Saloaro, M; Majumdar, S; Huhtinen, H; Paturi, P
2012-09-12
Magnetoresistive double perovskite Sr(2)FeMoO(6) thin films were grown with two different deposition pressures on SrTiO(3), MgO and NdGaO(3) substrates by pulsed laser deposition and thorough structural, magnetic and magneto-transport characterization was made. According to x-ray diffraction, all the films were phase pure and fully textured. Indication of substrate dependent strain and low angle grain boundaries was found, especially in films on MgO. Both the deposition pressure and the choice of the substrate have a strong influence on the saturation magnetization, M(s), and Curie temperature, T(C). The structural and magnetic data indicate the presence of anti-site disorder (ASD) in the films. The temperature dependence of resistivity showed semiconductive behaviour at temperatures below 100 K and metallic behaviour at higher temperatures. The semiconductive behaviour was found to increase with increasing ASD. In good quality films, up to 12% negative magnetoresistance (MR) was observed and films grown on MgO and NGO substrates also showed low field MR. However, the most significant observation of this study was that the magnetoresistivity of these Sr(2)FeMoO(6) thin films could not be explained with any traditional MR mechanism, but carried the clear signature of superposition of different mechanisms, in particular low angle grain boundary tunnelling and suppression of antiferromagnetically ordered domains under a magnetic field.
MgB2 thin-film bolometer for applications in far-infrared instruments on future planetary missions
International Nuclear Information System (INIS)
Lakew, B.; Aslam, S.; Brasunas, J.; Cao, N.; Costen, N.; La, A.; Nguyen, L.; Stevenson, T.; Waczynski, A.
2012-01-01
A SiN membrane based MgB 2 thin-film bolometer, with a non-optimized absorber, has been fabricated that shows an electrical noise equivalent power of 2.56 × 10 -13 W/√Hz operating at 30 Hz and a responsivity of 702 kV/W. It is predicted that with the inclusion of a gold black absorber that an optical specific detectivity of 8.3 × 10 10 cm/√Hz/W at an operational frequency of 10 Hz, can be realized for integration into future planetary exploration instrumentation where high sensitivity is required in the 17-250 μm spectral wavelength range.
Surface preparation for the heteroepitactic growth of ceramic thin films
International Nuclear Information System (INIS)
Norton, M.G.; Summerfelt, S.R.; Carter, C.B.
1990-01-01
The morphology, composition, and crystallographic orientation of the substrate influence the nucleation and growth of deposited thin films. A method for the preparation of controlled, characteristic surfaces is reported. The surfaces are suitable for the heteroepitactic growth of thin films. When used in the formation of electron-transparent thin foils, the substrates can be used to investigate the very early stages of film growth using transmission electron microscopy. The substrate preparation involves the cleaning and subsequent annealing to generate a surface consisting of a series of steps. The step terraces are formed on the energetically stable surface, and controlled nucleation and growth of films at step edges is found. The substrate materials prepared using this technique include (001) MgO, (001) SrTiO 3 , and (001) LaAlO 3
Thickness dependence of J_c (0) in MgB_2 films
International Nuclear Information System (INIS)
Chen, Yiling; Yang, Can; Jia, Chunyan; Feng, Qingrong; Gan, Zizhao
2016-01-01
Highlights: • A serial of MgB_2 superconducting films from 10 nm to 8 µm have been prepared. • T_c and J_c (5 K, 0 T) of films are high. • J_c (5 K, 0 T) reaches its maximum 2.3 × 10"8 A cm"−"2 for 100 nm films. • The relationship between thickness and J_c has been discussed in detail. - Abstract: MgB_2 superconducting films, whose thicknesses range from 10 nm to 8 µm, have been fabricated on SiC substrates by hybrid physical–chemical vapor deposition (HPCVD) method. It is the first time that the T_c and the J_c of MgB_2 films are studied on such a large scale. It is found that with the increasing of thickness, T_c elevates first and then keeps roughly stable except for some slight fluctuations, while J_c (5 K, 0 T) experiences a sharp increase followed by a relatively slow fall. The maximum J_c (5 K, 0 T) = 2.3 × 10"8 A cm"−"2 is obtained for 100 nm films, which is the experimental evidence for preparing high-quality MgB_2 films by HPCVD method. Thus, this work may provide guidance on choosing the suitable thickness for applications. Meanwhile, the films prepared by us cover ultrathin films, thin films and thick films, so the study on them will bring a comprehensive understanding of MgB_2 films.
Preparation of PZT thin films on YBCO electrodes by KrF excimer laser ablation technique
Energy Technology Data Exchange (ETDEWEB)
Kurogi, H; Yamagata, Y; Ebihara, K [Kumamoto Univ. (Japan). Dept. of Electr. Eng. and Comput. Sci.; Inoue, N [Kyushu Electric Power Co., Inc., Suizenji, 1-6-36, Kumamoto 862 (Japan)
1998-03-01
Pb(Zr{sub X}Ti{sub 1-X})O{sub 3} (PZT) films have excellent ferroelectric, optical, piezoelectric, and pyroelectric properties. We prepared PZT thin films by the excimer laser ablation technique. A pulsed KrF excimer laser (Lambda Physik LPX305icc, pulse duration of 25 ns, {lambda}=248 nm, 850 mJ Max.) was used to ablate the bulk targets. We investigated the influence of bottom electrode materials on the characteristics of the PZT thin films prepared on Pt and YBCO underlayers. The X-ray diffraction (XRD) patterns showed that the PZT films prepared with a laser fluence of 2 Jcm{sup -2} on YBCO/MgO(100) substrate at a wide temperature range of 550-680 C have a perovskite (001) structure. At the same laser fluence, the PZT films prepared on Pt/MgO(100) substrate have a perovskite (001) structure only at 650 C. The polarization-electric field (P-E) characteristics and fatigue properties of PZT thin films were measured by the Sawyer-Tower circuit. The remnant polarization and coercive field have been found to be P{sub r}=15 {mu}C cm{sup -2}, 30 {mu}C cm{sup -2} and E{sub c}=200 kV cm{sup -1}, 100 kV cm{sup -1} for Au/PZT/Pt/MgO and Au/PZT/YBCO/MgO correspondingly. The remnant polarization of Au/PZT/YBCO/MgO thin film was reduced to one-half after about 10{sup 8} cycles of switching. (orig.) 7 refs.
Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)
2013-01-01
A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.
Skew scattering dominated anomalous Hall effect in Cox(MgO)100-x granular thin films
Zhang, Qiang
2017-07-31
We investigated the mechanism(s) of the anomalous Hall effect (AHE) in magnetic granular materials by fabricating 100-nm-thick thin films of Cox(MgO)100-x with a Co volume fraction of 34≤x≤100 using co-sputtering at room temperature. We measured the temperature dependence of longitudinal resistivity (ρxx) and anomalous Hall resistivity (ρAHE) from 5 K to 300 K in all samples. We found that when x decreases from 100 to 34, the values of ρxx and ρAHE respectively increased by about four and three orders in magnitude. By linearly fitting the data, obtained at 5 K, of anomalous Hall coefficient (Rs) and of ρxx to log(Rs)~γlog(ρxx), we found that our results perfectly fell on a straight line with a slope of γ= 0.97±0.02. This fitting value of γ in Rs∝ρxxγ clearly suggests that skew scattering dominated the AHE in this granular system. To explore the effect of the scattering on the AHE, we performed the same measurements on annealed samples. We found that although both ρxx and ρAHE significantly reduced after annealing, the correlation between them was almost the same, which was confirmed by the fitted value, γ=0.99±0.03. These data strongly suggest that the AHE originates from the skew scattering in Co-MgO granular thin films no matter how strong the scatterings of electrons by the interfaces and defects is. This observation may be of importance to the development of spintronic devices based on MgO.
Alema, Fikadu; Pokhodnya, Konstantin
2015-11-01
Ba(Mg1/3Nb2/3)O3 (BMN) doped and undoped Ba0.45Sr0.55TiO3 (BST) thin films were deposited via radio frequency magnetron sputtering on Pt/TiO2/SiO2/Al2O3 substrates. The surface morphology and chemical state analyses of the films have shown that the BMN doped BST film has a smoother surface with reduced oxygen vacancy, resulting in an improved insulating properties of the BST film. Dielectric tunability, loss, and leakage current (LC) of the undoped and BMN doped BST thin films were studied. The BMN dopant has remarkably reduced the dielectric loss (˜38%) with no significant effect on the tunability of the BST film, leading to an increase in figure of merit (FOM). This is attributed to the opposing behavior of large Mg2+ whose detrimental effect on tunability is partially compensated by small Nb5+ as the two substitute Ti4+ in the BST. The coupling between MgTi″ and VO•• charged defects suppresses the dielectric loss in the film by cutting electrons from hopping between Ti ions. The LC of the films was investigated in the temperature range of 300-450K. A reduced LC measured for the BMN doped BST film was correlated to the formation of defect dipoles from MgTi″, VO•• and NbTi• charged defects. The carrier transport properties of the films were analyzed in light of Schottky thermionic emission (SE) and Poole-Frenkel (PF) emission mechanisms. The result indicated that while the carrier transport mechanism in the undoped film is interface limited (SE), the conduction in the BMN doped film was dominated by bulk processes (PF). The change of the conduction mechanism from SE to PF as a result of BMN doping is attributed to the presence of uncoupled NbTi• sitting as a positive trap center at the shallow donor level of the BST.
Preparation of MgO Films as Buffer Layers by Laser-ablation at Various Substrate Temperatures
Institute of Scientific and Technical Information of China (English)
LI Ling; WANG Chuanbin; WANG Fang; SHEN Qiang; ZHANG Lianmeng
2011-01-01
MgO thin films were deposited on Si(100) substrates by laser ablation under various substrate temperatures (Tsub),expecting to provide a candidate buffer layer for the textured growth of functional perovskite oxide films on Si substrates.The effect of Tsub on the preferred orientation,crystallinity and surface morphology of the films was investigated.MgO films in single-phase were obtained at 473-973 K.With increasing Tsub,the preferred orientation of the films changed from (200) to (111).The crystallinity and surface morphology was different too,depending on Tsub·At Tsub=673 K,the MgO film became uniform and smooth,exhibiting high crystallinity and a dense texture.
Host thin films incorporating nanoparticles
Qureshi, Uzma
The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful
Energy Technology Data Exchange (ETDEWEB)
Torres-Huerta, A.M., E-mail: atohuer@hotmail.com [Instituto Politecnico Nacional, Grupo de Ingenieria en Procesamiento de Materiales CICATA-IPN, Unidad Altamira, km 14.5, Carretera Tampico-Puerto Industrial Altamira. C. P. 89600, Altamira, Tamps (Mexico); Dominguez-Crespo, M.A. [Instituto Politecnico Nacional, Grupo de Ingenieria en Procesamiento de Materiales CICATA-IPN, Unidad Altamira, km 14.5, Carretera Tampico-Puerto Industrial Altamira. C. P. 89600, Altamira, Tamps (Mexico); Brachetti-Sibaja, S.B. [Alumna del postgrado en Tecnologia Avanzada del CICATA-IPN, Unidad Altamira IPN, km 14.5, Carretera Tampico-Puerto Industrial Altamira. C. P. 89600, Altamira, Tamps (Mexico); Arenas-Alatorre, J. [Instituto de Fisica, UNAM, Apartado Postal 20-364, 01000, D.F. (Mexico); Rodriguez-Pulido, A. [Unidad Profesional Adolfo Lopez Mateos, Luis Enrique Erro s/n, 07738, D. F. (Mexico)
2011-07-01
The ZnO-MgO alloys possess attractive properties for possible applications in optoelectronic and display devices; however, the optical properties are strongly dependent on the deposition parameters. In this work, the effect of the glassy and metallic substrates on the structural, morphological and optical properties of ZnO-MgO thin films using atmospheric pressure metal-organic chemical vapor deposition was investigated at relatively low deposition temperature, 500 deg. C. Magnesium and zinc acetylacetonates were used as the metal-organic source. X-ray diffraction experiments provided evidence that the kind of substrates cause a deviation of c-axis lattice constant due to the constitution of a oxide mixture (ZnO and MgO) in combination with different intermetallic compounds(Mg{sub 2}Zn{sub 11} and Mg{sub 4}Zn{sub 7}) in the growth films. The substitutional and interstitial sites of Mg{sup 2+} instead of Zn{sup 2+} ions in the lattice are the most probable mechanism to form intermetallic compounds. The optical parameters as well as thickness of the films were calculated by Spectroscopic Ellipsometry using the classical dispersion model based on the sum of the single and double Lorentz and Drude oscillators in combination with Kato-Adachi equations, as well as X-ray reflectivity.
NMR characterization of thin films
Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela
2010-06-15
A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.
NMR characterization of thin films
Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela
2008-11-25
A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.
Handbook of thin film technology
Frey, Hartmut
2015-01-01
“Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.
Put, Brecht; Vereecken, Philippe M; Mees, Maarten J; Rosciano, Fabio; Radu, Iuliana P; Stesmans, Andre
2015-11-21
RF-sputtered thin films of spinel Li(x)Mg(1-2x)Al(2+x)O4 were investigated for use as solid electrolyte. The usage of this material can enable the fabrication of a lattice matched battery stack, which is predicted to lead to superior battery performance. Spinel Li(x)Mg(1-2x)Al(2+x)O4 thin films, with stoichiometry (x) ranging between 0 and 0.25, were formed after a crystallization anneal as shown by X-ray diffraction and transmission electron microscopy. The stoichiometry of the films was evaluated by elastic recoil detection and Rutherford backscattering and found to be slightly aluminum rich. The excellent electronic insulation properties were confirmed by both current-voltage measurements as well as by copper plating tests. The electrochemical stability window of the material was probed using cyclic voltammetry. Lithium plating and stripping was observed together with the formation of a Li-Pt alloy, indicating that Li-ions passed through the film. This observation contradicted with impedance measurements at open circuit potential, which showed no apparent Li-ion conductivity of the film. Impedance spectroscopy as a function of potential showed the occurrence of Li-ion intercalation into the Li(x)Mg(1-2x)Al(2+x)O4 layers. When incorporating Li-ions in the material the ionic conductivity can be increased by 3 orders of magnitude. Therefore it is anticipated that the response of Li(x)Mg(1-2x)Al(2+x)O4 is more adequate for a buffer layer than as the solid electrolyte.
Fanciulli, Marco
2007-01-01
Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.
International Nuclear Information System (INIS)
Aberle, Armin G.
2009-01-01
The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.
International Nuclear Information System (INIS)
Kumar, Ashok; Thota, Subhash; Deva, Dinesh; Kumar, Jitendra
2014-01-01
Optical transmittance, hydration resistance and secondary electron emission characteristics of e-beam evaporated pure and Mo- or Ce-containing MgO thin films have been investigated. While the increased grain size and pyramidal columnar morphology following incorporation of molybdenum and cerium in MgO are responsible for the excellent discharge characteristics, emergence of neutral {100} and {110} MgO surfaces preferentially give rise to high optical transmittance (∼ 92–100%) and stability against hydration. Further, addition of Mo (or Ce) in MgO causes significant increase in defect density which, in turn, enhances the photoluminescence (PL) emission from 5-, 4- and 3-coordination sites. The changes lead to lowering of the breakdown voltage and hence improvement in the secondary electron emission (SEE) efficiency. These facts have been supported by ion-induced SEE yield (γ) deduced from the a.c. breakdown voltage observed, taking neon as a discharge gas, and determined semi-empirically as well with Hagstrum's theory based on Auger neutralization process using (i) band offset parameters and surface band gap data derived from X-ray photoelectron spectroscopy signal and (ii) information of defect energy levels obtained from photoluminescence (PL) measurements. The experimental values of neon ion-induced SEE yield (γ) are found to be 0.35, 0.42 and 0.39 for MgO, Mg–Mo–O (x = 0.035) and Mg–Ce–O (x = 0.01) thin films, respectively. - Highlights: • Higher hydration resistance • Increased photoluminescence emission • Higher secondary electron emission
International Nuclear Information System (INIS)
Watanabe, S.
1984-01-01
The invention provides a process for forming a magnetic thin film on a base film, a heat treatment process of a thin film sheet consisting of the base film and the magnetic thin film, and an apparatus for performing heat treatment of the thin film sheet. Tension applied to the thin film sheet is substantially equal to that applied to the base film when the magnetic thin film is formed thereon. Then, the thin film sheet is treated with heat. The thin film sheet is heated with a given temperature gradient to a reactive temperature at which heat shrinkage occurs, while the tension is being applied thereto. Thereafter, the thin film sheet to which the tension is still applied is cooled with substantially the same temperature gradient as applied in heating. The heat treatment apparatus has a film driving unit including a supply reel, a take-up reel, a drive source and guide rollers; a heating unit including heating plates, heater blocks and a temperature controller for heating the sheet to the reactive temperature; and a heat insulating unit including a thermostat and another temperature controller for maintaining the sheet at the nonreactive temperature which is slightly lower than the reactive temperature
International Nuclear Information System (INIS)
Kijima, H.; Ishikawa, T.; Marukame, T.; Matsuda, K.-I.; Uemura, T.; Yamamoto, M.
2007-01-01
Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with a Co-based full-Heusler alloy Co 2 MnSi (CMS) thin film having the ordered L2 1 structure as a lower electrode, a MgO tunnel barrier, and a Co 50 Fe 50 upper electrode. Reflection high-energy electron diffraction patterns observed in situ for each layer in the MTJ layer structure during fabrication clearly indicated that all layers of the CMS lower electrode, MgO tunnel barrier, and Co 50 Fe 50 upper electrode grew epitaxially. The microfabricated fully epitaxial CMS/MgO/Co 50 Fe 50 MTJs demonstrated relatively high tunnel magnetoresistance ratios of 90% at room temperature and 192% at 4.2 K
Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures
International Nuclear Information System (INIS)
Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.
1992-01-01
Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films
Cholesterol biosensor based on rf sputtered zinc oxide nanoporous thin film
International Nuclear Information System (INIS)
Singh, S. P.; Arya, Sunil K.; Pandey, Pratibha; Malhotra, B. D.; Saha, Shibu; Sreenivas, K.; Gupta, Vinay
2007-01-01
Cholesterol oxidase (ChOx) has been immobilized onto zinc oxide (ZnO) nanoporous thin films grown on gold surface. A preferred c-axis oriented ZnO thin film with porous surface morphology has been fabricated by rf sputtering under high pressure. Optical studies and cyclic voltammetric measurements show that the ChOx/ZnO/Au bioelectrode is sensitive to the detection of cholesterol in 25-400 mg/dl range. A relatively low value of enzyme's kinetic parameter (Michaelis-Menten constant) ∼2.1 mM indicates enhanced enzyme affinity of ChOx to cholesterol. The observed results show promising application of nanoporous ZnO thin film for biosensing application without any functionalization
Effects of Nb and Sr doping on crystal structure of epitaxial BaTiO3 thin films on MgO substrates
International Nuclear Information System (INIS)
Kim, Yongsam; Chen, Chunhua; Saiki, Atsushi; Wakiya, Naoki; Shinozaki, Kazuo; Mizutani, Nobuyasu
2002-01-01
Niobium (Nb) and strontium (Sr) doped barium titanate (BT) films were deposited by radio frequency (RF) magnetron sputtering with Nb and Sr doped BT ceramic targets, respectively. The effect of Nb and Sr doping on the crystal structure of epitaxial BaTiO 3 thin films on MgO substrates was investigated. The crystal structure of the films was examined using the reciprocal space mapping measurement. All the films exhibit a cube-on-cube relation with respect to the substrates. As the amount of doped Sr increased, both of the in-plane and out-of-plane lattice constants of Sr doped BT films slowly approached the BT bulk values. On the other hand, the lattice constants of Nb doped BT films were rapidly coming close to the bulk values. These indicated that the lattices of doped BT films were relaxed as the amount of doped elements increased. In addition, Nb doping had greater influence on the relaxation of the films than Sr doping for the same content of dopant. (author)
International Nuclear Information System (INIS)
Sosiati, H.; Hata, S.; Doi, T.; Matsumoto, A.; Kitaguchi, H.; Nakashima, H.
2013-01-01
Highlights: ► Nanostructure characterization of Ni and B layers as artificial pinning centers (APCs). ► Relationship between nanostructure and J c property. ► Enhanced J c in parallel field by parallel APCs within the MgB 2 film. -- Abstract: Research on the MgB 2 /Ni and MgB 2 /B multilayer films fabricated by an electron beam (EB) evaporation technique have been extensively carried out. The critical current density, J c of MgB 2 /Ni and MgB 2 /B multilayer films in parallel fields has been suggested to be higher than that of monolayer MgB 2 film due to introducing the artificial pinning centers of nano-sized Ni and B layers. Nanostructure characterization of the artificial pinning centers in the multilayer films were examined by transmission electron microscopy (TEM) and scanning TEM (STEM-energy dispersive X-ray spectroscopy (STEM-EDS))–EDS to understand the mechanism of flux pinning. The growth of columnar MgB 2 grains along the film-thickness direction was recognized in the MgB 2 /Ni multilayer film, but not in the MgB 2 /B multilayer film. Nano-sized Ni layers were present as crystalline epitaxial layers which is interpreted that Ni atoms might be incorporated into the MgB 2 lattice to form (Mg,Ni)B 2 phase. On the other hand, nano-sized B layers were amorphous layers. Crystalline (Mg,Ni)B 2 layers worked more effectively than amorphous B-layers, providing higher flux-pinning force that resulted in higher J c of the MgB 2 /Ni multilayer film than the MgB 2 /B multilayer film
Skew scattering dominated anomalous Hall effect in Cox(MgO)100-x granular thin films
Zhang, Qiang; Wen, Yan; Zhao, Yuelei; Li, Peng; He, Xin; Zhang, Junli; He, Yao; Peng, Yong; Yu, Ronghai; Zhang, Xixiang
2017-01-01
We investigated the mechanism(s) of the anomalous Hall effect (AHE) in magnetic granular materials by fabricating 100-nm-thick thin films of Cox(MgO)100-x with a Co volume fraction of 34≤x≤100 using co
Hydrogen storage in thin film magnesium-scandium alloys
International Nuclear Information System (INIS)
Niessen, R.A. H.; Notten, P.H. L.
2005-01-01
Thorough electrochemical materials research has been performed on thin films of novel magnesium-scandium hydrogen storage alloys. It was found that palladium-capped thin films of Mg x Sc (1-x) with different compositions (ranging from x=0.50 -0.90) show an increase in hydrogen storage capacity of more than 5-20% as compared to their bulk equivalents using even higher discharge rates. The maximum reversible hydrogen storage capacity at the optimal composition (Mg 80 Sc 20 ) amounts to 1795-bar mAh/g corresponding to a hydrogen content of 2.05 H/M or 6.7-bar wt.%, which is close to five times that of the commonly used hydride-forming materials in commercial NiMH batteries. Galvanostatic intermittent titration technique (GITT) measurements show that the equilibrium pressure during discharge is lower than that of bulk powders by one order of magnitude (10 -7 -bar mbar versus 10 -6 -bar mbar, respectively)
Vapor annealing synthesis of non-epitaxial MgB2 films on glassy carbon
Baker, A. A.; Bayu Aji, L. B.; Bae, J. H.; Stavrou, E.; Steich, D. J.; McCall, S. K.; Kucheyev, S. O.
2018-05-01
We describe the fabrication and characterization of 25–800 nm thick MgB2 films on glassy carbon substrates by Mg vapor annealing of sputter-deposited amorphous B films. Results demonstrate a critical role of both the initial B film thickness and the temperature–time profile on the microstructure, elemental composition, and superconducting properties of the resultant MgB2 films. Films with thicknesses of 55 nm and below exhibit a smooth surface, with a roughness of 1.1 nm, while thicker films have surface morphology consisting of elongated nano-crystallites. The suppression of the superconducting transition temperature for thin films scales linearly with the oxygen impurity concentration and also correlates with the amount of lattice disorder probed by Raman scattering. The best results are obtained by a rapid (12 min) anneal at 850 °C with large temperature ramp and cooling rates of ∼540 °C min‑1. Such fast processing suppresses the deleterious oxygen uptake.
Indium Tin Oxide thin film gas sensors for detection of ethanol vapours
International Nuclear Information System (INIS)
Vaishnav, V.S.; Patel, P.D.; Patel, N.G.
2005-01-01
Indium Tin Oxide (ITO: In 2 O 3 + 17% SnO 2 ) thin films grown on alumina substrate at 648 K temperatures using direct evaporation method with two gold pads deposited on the top for electrical contacts were exposed to ethanol vapours (200-2500 ppm). The operating temperature of the sensor was optimized. The sensitivity variation of films having different thickness was studied. The sensitivity of the films deposited on Si substrates was studied. The response of the film with MgO catalytic layer on sensitivity and selectivity was observed. A novel approach of depositing thin stimulating layer of various metals/oxides below the ITO film was tried and tested
DC magnetron sputtering prepared Ag-C thin film anode for thin film lithium ion microbatteries
International Nuclear Information System (INIS)
Li, Y.; Tu, J.P.; Shi, D.Q.; Huang, X.H.; Wu, H.M.; Yuan, Y.F.; Zhao, X.B.
2007-01-01
An Ag-C thin film was prepared by DC magnetron co-sputtering, using pure silver and graphite as the targets. The microstructure and morphology of the deposited thin film were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Electrochemical performances of the Ag-C thin film anode were investigated by means of discharge/charge and cyclic voltammogram (CV) tests in model cells. The electrochemical impedance spectrum (EIS) characteristics and the chemical diffusion coefficient, D Li of the Ag-C thin film electrode at different discharging states were discussed. It was believed that the excellent cycling performance of the Ag-C electrode was ascribed to the good conductivity of silver and the volume stability of the thin film
Ramanathan, Shriram
2009-01-01
Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.
Synthesis and characterization of hard ternary AlMgB composite films prepared by sputter deposition
Energy Technology Data Exchange (ETDEWEB)
Yan Ce [Department of Physics and Materials Science and Center of Super-Diamond and Advanced Films, City University of Hong Kong (Hong Kong); Zhou, Z.F. [Department of Manufacturing Engineering and Engineering Management and Advanced Coatings Applied Research Laboratory, City University of Hong Kong (Hong Kong); Chong, Y.M.; Liu, C.P.; Liu, Z.T. [Department of Physics and Materials Science and Center of Super-Diamond and Advanced Films, City University of Hong Kong (Hong Kong); Li, K.Y., E-mail: mekyli@cityu.edu.h [Department of Manufacturing Engineering and Engineering Management and Advanced Coatings Applied Research Laboratory, City University of Hong Kong (Hong Kong); Bello, I., E-mail: apibello@cityu.edu.h [Department of Physics and Materials Science and Center of Super-Diamond and Advanced Films, City University of Hong Kong (Hong Kong); Kutsay, O.; Zapien, J.A.; Zhang, W.J. [Department of Physics and Materials Science and Center of Super-Diamond and Advanced Films, City University of Hong Kong (Hong Kong)
2010-07-30
Hard and superlight thin films laminated with boron carbide have been proposed as candidates for strategic use such as armor materials in military and space applications. Aluminum magnesium boride (AlMgB) films are excellent candidates for these purposes. We prepared AlMgB films by sputter deposition using multiple unbalanced planar magnetrons equipped with two boron and one AlMg targets. The film morphology changed and the film's root mean square (rms) roughness varied from 1.0 to 18 nm as the power density of the AlMg target increased from 0.2 to 1.0 W/cm{sup 2} while the power density of each boron target was maintained at 2 W/cm{sup 2}. Chemical analyses show dominating Al, Mg, B and trace elements of oxygen, carbon and argon. The film composition also varies with altering the power density supplied to the AlMg target. The film with an atomic ratio of Al:Mg:B = 1.38:0.64:1 exhibits the highest hardness ({approx} 30 GPa). This value surpasses the hardness of hydrogenated diamond-like carbon films (24-28 GPa) prepared by plasma enhanced chemical vapor deposition.
Synthesis and characterization of hard ternary AlMgB composite films prepared by sputter deposition
International Nuclear Information System (INIS)
Yan Ce; Zhou, Z.F.; Chong, Y.M.; Liu, C.P.; Liu, Z.T.; Li, K.Y.; Bello, I.; Kutsay, O.; Zapien, J.A.; Zhang, W.J.
2010-01-01
Hard and superlight thin films laminated with boron carbide have been proposed as candidates for strategic use such as armor materials in military and space applications. Aluminum magnesium boride (AlMgB) films are excellent candidates for these purposes. We prepared AlMgB films by sputter deposition using multiple unbalanced planar magnetrons equipped with two boron and one AlMg targets. The film morphology changed and the film's root mean square (rms) roughness varied from 1.0 to 18 nm as the power density of the AlMg target increased from 0.2 to 1.0 W/cm 2 while the power density of each boron target was maintained at 2 W/cm 2 . Chemical analyses show dominating Al, Mg, B and trace elements of oxygen, carbon and argon. The film composition also varies with altering the power density supplied to the AlMg target. The film with an atomic ratio of Al:Mg:B = 1.38:0.64:1 exhibits the highest hardness (∼ 30 GPa). This value surpasses the hardness of hydrogenated diamond-like carbon films (24-28 GPa) prepared by plasma enhanced chemical vapor deposition.
International Nuclear Information System (INIS)
Jayakumar, S.; Kannan, M.D.; Prasanna, S.
2012-01-01
The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials
Crystallinity Improvement of Zn O Thin Film on Different Buffer Layers Grown by MBE
International Nuclear Information System (INIS)
Shao-Ying, T.; Che-Hao, L.; Wen-Ming, Ch.; Yang, C.C.; Po-Ju, Ch.; Hsiang-Chen, W.; Ya-Ping, H.
2012-01-01
The material and optical properties of Zn O thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the Zn O layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality Zn O thin film growth. A Ga N buffer layer slightly increased the quality of the Zn O thin film, but the threading dislocations still stretched along the c-axis of the Ga N layer. The use of Mg O as the buffer layer decreased the surface roughness of the Zn O thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality Zn O thin film growth.
Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE
Directory of Open Access Journals (Sweden)
Shao-Ying Ting
2012-01-01
Full Text Available The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.
Material engineering to fabricate rare earth erbium thin films for exploring nuclear energy sources
Banerjee, A.; Abhilash, S. R.; Umapathy, G. R.; Kabiraj, D.; Ojha, S.; Mandal, S.
2018-04-01
High vacuum evaporation and cold-rolling techniques to fabricate thin films of the rare earth lanthanide-erbium have been discussed in this communication. Cold rolling has been used for the first time to successfully fabricate films of enriched and highly expensive erbium metal with areal density in the range of 0.5-1.0 mg/cm2. The fabricated films were used as target materials in an advanced nuclear physics experiment. The experiment was designed to investigate isomeric states in the heavy nuclei mass region for exploring physics related to nuclear energy sources. The films fabricated using different techniques varied in thickness as well as purity. Methods to fabricate films with thickness of the order of 0.9 mg/cm2 were different than those of 0.4 mg/cm2 areal density. All the thin films were characterized using multiple advanced techniques to accurately ascertain levels of contamination as well as to determine their exact surface density. Detailed fabrication methods as well as characterization techniques have been discussed.
Preparation of YBa2Cu3O7-δ epitaxial thin films by pulsed ion-beam evaporation
International Nuclear Information System (INIS)
Sorasit, S.; Yoshida, G.; Suzuki, T.; Suematsu, H.; Jiang, W.; Yatsui, K.
2001-01-01
Thin films of YBa 2 Cu 3 O 7-δ (Y-123) grown epitaxially have been successfully deposited by ion-beam evaporation (IBE). The c-axis oriented YBa 2 Cu 3 O 7-δ thin films were successfully deposited on MgO and SrTiO 3 substrates. The Y-123 thin films which were prepared on the SrTiO 3 substrates were confirmed to be epitaxially grown, by X-ray diffraction analysis. The instantaneous deposition rate of the Y-123 thin films was estimated as high as 4 mm/s. (author)
Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH
Energy Technology Data Exchange (ETDEWEB)
Oguchi, Hiroyuki, E-mail: oguchi@nanosys.mech.tohoku.ac.jp [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan); Micro System Integration Center (muSIC), Tohoku University, Sendai 980-0845 (Japan); Isobe, Shigehito [Creative Research Institution, Hokkaido University, Sapporo 001-0021 (Japan); Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Kuwano, Hiroki [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan); Shiraki, Susumu; Hitosugi, Taro [Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Orimo, Shin-ichi [Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)
2015-09-01
We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250 °C under a hydrogen pressure of 1.3 × 10{sup −2} Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness R{sub RMS} of ∼0.4 nm.
Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH
International Nuclear Information System (INIS)
Oguchi, Hiroyuki; Isobe, Shigehito; Kuwano, Hiroki; Shiraki, Susumu; Hitosugi, Taro; Orimo, Shin-ichi
2015-01-01
We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250 °C under a hydrogen pressure of 1.3 × 10 −2 Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness R RMS of ∼0.4 nm
Fabrication of AlN thin films on different substrates at ambient temperature
Cai, W X; Wu, P H; Yang, S Z; Ji, Z M
2002-01-01
Aluminium nitride (AlN) is very useful as a barrier in superconductor-insulator-superconductor (SIS) device or as an insulating layer in many other applications. At ambient temperature, we deposit AlN thin films onto different substrates (such as MgO, LaAlO sub 3 and Si) by using radio-frequency magnetron sputtering and pure Al target. X-ray diffraction (XRD) and PHI-scan patterns show that the films grown on MgO substrates are excellent epitaxial films with (101) orientation of a hexagonal lattice. A possible structure of the interface between the film and the substrate is suggested and discussed.
Kaur, Inderjeet
1983-01-01
Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver sion, and protection and passivating layers. Ind...
Strain quantification in epitaxial thin films
International Nuclear Information System (INIS)
Cushley, M
2008-01-01
Strain arising in epitaxial thin films can be beneficial in some cases but devastating in others. By altering the lattice parameters, strain may give a thin film properties hitherto unseen in the bulk material. On the other hand, heavily strained systems are prone to develop lattice defects in order to relieve the strain, which can cause device failure or, at least, a decrease in functionality. Using convergent beam electron diffraction (CBED) and high-resolution transmission electron microscopy (HRTEM), it is possible to determine local strains within a material. By comparing the results from CBED and HRTEM experiments, it is possible to gain a complete view of a material, including the strain and any lattice defects present. As well as looking at how the two experimental techniques differ from each other, I will also look at how results from different image analysis algorithms compare. Strain in Si/SiGe samples and BST/SRO/MgO capacitor structures will be discussed.
Epitaxial thin film growth of LiH using a liquid-Li atomic template
International Nuclear Information System (INIS)
Oguchi, Hiroyuki; Ikeshoji, Tamio; Orimo, Shin-ichi; Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro; Kuwano, Hiroki
2014-01-01
We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al 2 O 3 substrates indicated polycrystalline films with a LiAlO 2 secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides
Biomimetic thin film synthesis
Energy Technology Data Exchange (ETDEWEB)
Graff, G.L.; Campbell, A.A.; Gordon, N.R.
1995-05-01
The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.
Thin Film Photovoltaic Partnership Project | Photovoltaic Research | NREL
Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed
Thin Film & Deposition Systems (Windows)
Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...
MgB2 ultrathin films fabricated by hybrid physical chemical vapor deposition and ion milling
Directory of Open Access Journals (Sweden)
Narendra Acharya
2016-08-01
Full Text Available In this letter, we report on the structural and transport measurements of ultrathin MgB2 films grown by hybrid physical-chemical vapor deposition followed by low incident angle Ar ion milling. The ultrathin films as thin as 1.8 nm, or 6 unit cells, exhibit excellent superconducting properties such as high critical temperature (Tc and high critical current density (Jc. The results show the great potential of these ultrathin films for superconducting devices and present a possibility to explore superconductivity in MgB2 at the 2D limit.
Characterization of organic thin films
Ulman, Abraham; Evans, Charles A
2009-01-01
Thin films based upon organic materials are at the heart of much of the revolution in modern technology, from advanced electronics, to optics to sensors to biomedical engineering. This volume in the Materials Characterization series introduces the major common types of analysis used in characterizing of thin films and the various appropriate characterization technologies for each. Materials such as Langmuir-Blodgett films and self-assembled monolayers are first introduced, followed by analysis of surface properties and the various characterization technologies used for such. Readers will find detailed information on: -Various spectroscopic approaches to characterization of organic thin films, including infrared spectroscopy and Raman spectroscopy -X-Ray diffraction techniques, High Resolution EELS studies, and X-Ray Photoelectron Spectroscopy -Concise Summaries of major characterization technologies for organic thin films, including Auger Electron Spectroscopy, Dynamic Secondary Ion Mass Spectrometry, and Tra...
AFM study of growth of Bi2Sr2-xLaxCuO6 thin films
International Nuclear Information System (INIS)
Haitao Yang; Hongjie Tao; Yingzi Zhang; Duogui Yang; Lin Li; Zhongxian Zhao
1997-01-01
c-axis-oriented Bi 2 Sr 1.6 La 0.4 CuO 6 thin films deposited on flat planes of (100)SrTiO 3 , (100)LaAlO 3 and (100)MgO substrates and vicinal planes (off-angle ∼ 6 deg.) of SrTiO 3 substrates by RF magnetron sputtering were studied by atomic force microscopy (AFM). T c of these films reached 29 K. Film thickness ranged from 15 nm to 600 nm. Two typical growth modes have been observed. AFM images of thin films on flat planes of substrates showed a terraced-island growth mode. By contrast, Bi-2201 thin films on vicinal planes of substrates showed a step-flow growth mode. The growth unit is a half-unit-cell in the c-axis for both growth modes. No example of spiral growth, which was thought to be the typical structure of YBCO thin films, was found in either of these kinds of thin films. (author)
Self-Limited Growth in Pentacene Thin Films.
Pachmajer, Stefan; Jones, Andrew O F; Truger, Magdalena; Röthel, Christian; Salzmann, Ingo; Werzer, Oliver; Resel, Roland
2017-04-05
Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought.
Frederick, Joshua C.
Lead-based ferroelectric materials are of significant technological importance for sensing and actuation due to their high piezoelectric performance (i.e., the ability to convert an electrical signal to mechanical displacement, and vice versa). Traditionally, bulk ceramic or single crystals materials have filled these roles; however, emerging technologies stand to benefit by incorporating thin films to achieve miniaturization while maintaining high efficiency and sensitivity. Currently, chemical systems that have been well characterized in bulk form (e.g. Pb(Mg1/3Nb2/3)O3- xPbTiO3, or PMN-xPT) require further study to optimize both the chemistry and structure for deployment in thin film devices. Furthermore, the effect of internal electric fields is more significant at the length scales of thin films, resulting in self biases that require compensation to reveal their intrinsic dielectric response. To this end, the structure-property relations of epitaxial PMN-xPT films sputter deposited on a variety of substrates were investigated. Attention was paid to how the structure (i.e., strain state, crystal structure, domain configuration, and defects) gave rise to the ferroelectric, dielectric, and piezoelectric response. Three-dimensional visualization of the dielectric response as a simultaneous function of electric field and temperature revealed the true phase transition of the films, which was found to correspond to the strain state and defect concentration. A lead-buffered anneal process was implemented to enhance the ferroelectric and dielectric response of the films without altering their stoichiometry. It was discovered that PMN- xPT films could be domain-engineered to exhibit a mixed domain state through chemistry and substrate choice. Such films exhibited a monoclinic distortion similar to that of the bulk compositions near the morphotropic phase boundary. Finally, it was revealed that the piezoelectric response could be greatly enhanced by declamping the film
Xiao, Zhuyun; Mohanchandra, Kotekar P.; Lo Conte, Roberto; Ty Karaba, C.; Schneider, J. D.; Chavez, Andres; Tiwari, Sidhant; Sohn, Hyunmin; Nowakowski, Mark E.; Scholl, Andreas; Tolbert, Sarah H.; Bokor, Jeffrey; Carman, Gregory P.; Candler, Rob N.
2018-05-01
Enhancing the magnetoelectric coupling in a strain-mediated multiferroic composite structure plays a vital role in controlling magnetism by electric fields. An enhancement of magnetoelastic coupling between ferroelectric single crystal (011)-cut [Pb(Mg1/3Nb2/3)O3](1-x)-[PbTiO3]x (PMN-PT, x≈ 0.30) and ferromagnetic polycrystalline Ni thin film through an interposed benzocyclobutene polymer thin film is reported. A nearly twofold increase in sensitivity of remanent magnetization in the Ni thin film to an applied electric field is observed. This observation suggests a viable method of improving the magnetoelectric response in these composite multiferroic systems.
Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition
International Nuclear Information System (INIS)
Melikhova, O.; Čížek, J.; Lukáč, F.; Vlček, M.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.
2013-01-01
Highlights: ► Thin ZnO films and high quality ZnO crystal were electrochemically doped with hydrogen. ► Hydrogen absorbed in ZnO causes plastic deformation both in ZnO crystal and thin films. ► In ZnO crystal a sub-surface region with very high density of defects was formed. ► Moreover, plastic deformation causes specific surface modification of ZnO crystal. ► In ZnO films hydrogen-induced plastic deformation introduced defects in the whole film. -- Abstract: ZnO films with thickness of ∼80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects than the film deposited on amorphous FS substrate most probably due to a dense network of misfit dislocations. The ZnO films and the reference ZnO crystal were subsequently loaded with hydrogen by electrochemical cathodic charging. SPIS characterizations revealed that absorbed hydrogen introduces new defects into ZnO
Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition
Energy Technology Data Exchange (ETDEWEB)
Melikhova, O., E-mail: oksivmel@yahoo.com [Charles University in Prague, Faculty of Mathematics and Physics, V Holesovickach 2, CZ-180 00 Praha 8 (Czech Republic); Čížek, J.; Lukáč, F.; Vlček, M. [Charles University in Prague, Faculty of Mathematics and Physics, V Holesovickach 2, CZ-180 00 Praha 8 (Czech Republic); Novotný, M.; Bulíř, J.; Lančok, J. [Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague (Czech Republic); Anwand, W.; Brauer, G. [Institut für Strahlenphysik, Helmholtz-Zentrum Dresden-Rossendorf, PO Box 510 119, D-01314 Dresden (Germany); Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P. [National Centre for Plasma Science and Technology, School of Physical Sciences, Glasnevin, Dublin 9 (Ireland)
2013-12-15
Highlights: ► Thin ZnO films and high quality ZnO crystal were electrochemically doped with hydrogen. ► Hydrogen absorbed in ZnO causes plastic deformation both in ZnO crystal and thin films. ► In ZnO crystal a sub-surface region with very high density of defects was formed. ► Moreover, plastic deformation causes specific surface modification of ZnO crystal. ► In ZnO films hydrogen-induced plastic deformation introduced defects in the whole film. -- Abstract: ZnO films with thickness of ∼80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects than the film deposited on amorphous FS substrate most probably due to a dense network of misfit dislocations. The ZnO films and the reference ZnO crystal were subsequently loaded with hydrogen by electrochemical cathodic charging. SPIS characterizations revealed that absorbed hydrogen introduces new defects into ZnO.
Energy Technology Data Exchange (ETDEWEB)
Sentis, M; Delaporte, P [I.M.F.M., 13 - Marseille (FR); Gerri, M; Marine, W [Aix-Marseille-2 Univ., 13-Marseille (FR). Centre Universitaire de Luminy
1991-05-01
Thin films of YBa{sub 2}Cu{sub 3}O{sub 7} are deposited by laser ablation on MgO and YSZ substrates. Deposits by infrared (I.R.) Nd: YAG are non stoechiometric. The films having the best superconductor qualities are deposited by ablation with an excimer U.V. laser ({lambda} = 308 nm). These films are epitaxiated with the c axis perpendicular to the substrate. The film quality depends on the substrate temperature, oxygen pressure and cooling speed.
Chemical and Electronic Structure Studies of Refractory and Dielectric Thin Films.
Corneille, Jason Stephen
This study presents the synthesis and characterization of oxide and refractory thin films under varying conditions. The deposition of the thin films is performed under vacuum conditions. The characterization of the growth, as well as the chemical and electronic properties of the thin films was accomplished using a broad array of surface analytical techniques. These model studies describe the relationship between the preparative processes and the stoichiometry, structure and electronic properties of the film products. From these efforts, the optimal deposition conditions for the production of high quality films have been established. The thin film oxides synthesized and studied here include magnesium oxide, silicon oxide and iron oxide. These oxides were synthesized on a refractory substrate using both post oxidation of thin films as well as reactive vapor deposition of the metals in the presence of an oxygen background. Comparisons and contrasts are presented for the various systems. Metallic magnesium films were grown and characterized as a preliminary study to the synthesis of magnesium oxide. Magnesium oxide (MgO(100)) was synthesized on Mo(100) by evaporating magnesium at a rate of one monolayer per minute in an oxygen background pressure of 1 times 10 ^{-6} Torr at room temperature. The resulting film was found to exhibit spectroscopic characteristics quite similar to those observed for bulk MgO. The acid/base characteristics of the films were studied using carbon monoxide, water and methanol as probe molecules. The film was found to exhibit essentially the same chemical properties as found in analogous powdered catalysts. Silicon dioxide was synthesized by evaporating silicon onto Mo(100) in an oxygen ambient. It is shown that the silicon oxide prepared at room temperature with a silicon deposition rate of {~ }{1.2}A/min and an oxygen pressure of 2 times 10^{ -8} Torr, consisted of predominantly silicon dioxide with a small fraction of suboxides. Annealing to
Thin films for precision optics
International Nuclear Information System (INIS)
Araujo, J.F.; Maurici, N.; Castro, J.C. de
1983-01-01
The technology of producing dielectric and/or metallic thin films for high precision optical components is discussed. Computer programs were developed in order to calculate and register, graphically, reflectance and transmittance spectra of multi-layer films. The technology of vacuum evaporation of several materials was implemented in our thin-films laboratory; various films for optics were then developed. The possibility of first calculate film characteristics and then produce the film is of great advantage since it reduces the time required to produce a new type of film and also reduces the cost of the project. (C.L.B.) [pt
Analysis of Hard Thin Film Coating
Shen, Dashen
1998-01-01
MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.
Metselaar, J.W.; Kuznetsov, V.I.
1998-01-01
The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with
Bi-Sr-Ca-Cu-O superconducting thin films: theory and experiment
Energy Technology Data Exchange (ETDEWEB)
Yavuz, M [Department of Mechanical Engineering and Mechatronics Engineering Program, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Boybay, M S [Department of Mechanical Engineering and Mechatronics Engineering Program, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Elbuken, C [Department of Mechanical Engineering and Mechatronics Engineering Program, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Andrews, M J [Los Alamos National Lab, PO Box 1663, Mail Stop B 296, Los Alamos, NM 87545 (United States); Hu, C R [Department of Physics, Texas A and M University, College Station, Texas 77843 (United States); Ross, J H [Department of Physics, Texas A and M University, College Station, Texas 77843 (United States)
2006-06-01
The interest of this paper centers on fabrication and characterization and modeling of vortices in high temperature superconducting thin films. As a first step, the magnetic vertices of the superconducting matrix were modeled. As a second, Bi-Sr-Ca-Cu-O thin films were grown using Pulsed Laser Ablation (PLD) on single crystal MgO substrates as magnetic templates for the potential use for Nano and Microelectronic circuits, and were characterized by x-ray diffraction, electron, and atomic force microscopy. The third step (future work) will be observation and pinning of these vortices using Bitter decoration.
Thin-Film Material Science and Processing | Materials Science | NREL
Thin-Film Material Science and Processing Thin-Film Material Science and Processing Photo of a , a prime example of this research is thin-film photovoltaics (PV). Thin films are important because cadmium telluride thin film, showing from top to bottom: glass, transparent conducting oxide (thin layer
Nanocrystal thin film fabrication methods and apparatus
Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming
2018-01-09
Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.
Epitaxial thin film growth of LiH using a liquid-Li atomic template
Energy Technology Data Exchange (ETDEWEB)
Oguchi, Hiroyuki, E-mail: oguchi@nanosys.mech.tohoku.ac.jp [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan); Micro System Integration Center (muSIC), Tohoku University, Sendai 980-0845 (Japan); Ikeshoji, Tamio; Orimo, Shin-ichi [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro [Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Kuwano, Hiroki [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan)
2014-11-24
We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al{sub 2}O{sub 3} substrates indicated polycrystalline films with a LiAlO{sub 2} secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides.
Semiconducting p-type MgNiO:Li epitaxial films fabricated by cosputtering method
Energy Technology Data Exchange (ETDEWEB)
Kwon, Yong Hun; Chun, Sung Hyun; Cho, Hyung Koun [School of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)
2013-07-15
Li-doped ternary Mg{sub x}Ni{sub 1-x}O thin films were deposited on (0001) Al{sub 2}O{sub 3} substrates by a radio frequency (RF) magnetron cosputtering method with MgO and NiO:Li targets. The Mg mole fraction and Li content were relatively controlled by changing RF power for the MgO target over a range of 0-300 W, while the NiO:Li target was kept at 150 W. As a result, all films were epitaxially grown on (0001) Al{sub 2}O{sub 3} substrates with the relationship of [110]{sub NiO}||[1110]{sub Al2O3}, [112]{sub NiO}||[2110]{sub Al2O3} (in-plane), and [111]{sub NiO}||[0001]{sub Al2O3} (out-of-plane), and showed p-type semiconducting properties. Furthermore, from x-ray diffraction patterns, the authors found that MgO was effectively mixed with NiO:Li without structural deformation due to low lattice mismatch (0.8%) between NiO and MgO. However, the excess Li contents degraded the crystallinity of the MgNiO films. The band-gap of films was continuously shifted from 3.66 eV (339 nm) to 4.15 eV (299 nm) by the RF power of the MgO target. A visible transmittance of more than 80% was exhibited at RF powers higher than 200 W. Ultimately, the electrical resistivity of p-type MgNiO films was improved from 7.5 to 673.5 {Omega}cm, indicating that the Li-doped MgNiO films are good candidates for transparent p-type semiconductors.
Thickness-dependent radiative properties of Y-Ba-Cu-O thin films
International Nuclear Information System (INIS)
Phelan, P.E.; Chen, G.; Tien, C.L.
1991-01-01
Some applications of high-temperature superconductors where their thermal radiative behavior is important, such as bolometers, optically-triggered switches and gates, and space-cooled electronics, required the superconductor to be in the form of a very thin film whose radiative behavior cannot be adequately represented by a semi-infinite analysis. Two properties of particular importance are the film absorptance and the combined film/substrate absorptance, which are crucial to the operation of many devices. This paper reports on calculations of the absorptance of superconducting-state Y-Ba-Cu-O films on MgO substrates which suggest that for film thicknesses less than about 50 nm, a decrease in the film thickness leads to an increase in both the film absorptance and the film/substrate absorptance. Furthermore, the film absorptance is maximum at some optimal value of film thickness. Assuming the film to be a smooth, continuous slab with a refractive index equal to that of the bulk Y-Ba-Cu-O is verified, at least in the normal state and for films as thin as 35 nm, by room-temperature reflectance and transmittance measurements
Process for growing a film epitaxially upon a MgO surface
McKee, Rodney Allen; Walker, Frederick Joseph
1997-01-01
A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.
Characterizations of photoconductivity of graphene oxide thin films
Directory of Open Access Journals (Sweden)
Shiang-Kuo Chang-Jian
2012-06-01
Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.
Pradipto, Abdul-Muizz; Akiyama, Toru; Ito, Tomonori; Nakamura, Kohji
2018-01-01
The effects of applying external electric fields to the anomalous and spin Hall conductivities in Fe thin-film models with different layer thicknesses on MgO(001) are investigated by using first-principles calculations. We observe that, for the considered systems, the application of positive electric field associated with the accumulation of negative charges on the Fe side generally decreases (increases) the anomalous (spin) Hall conductivities. The mapping of the Hall conductivities within the two-dimensional Brillouin zone shows that the electric-field-induced modifications are related to the modification of the band structures of the atoms at the interface with the MgO substrate. In particular, the external electric field affects the Hall conductivities via the modifications of the dx z,dy z orbitals, in which the application of positive electric field pushes the minority-spin states of the dx z,dy z bands closer to the Fermi level. Better agreement with the anomalous Hall conductivity for bulk Fe and a more realistic scenario for the electric field modification of Hall conductivities are obtained by using the thicker layers of Fe on MgO (Fe3/MgO and Fe5/MgO).
Work function and quantum efficiency study of metal oxide thin films on Ag(100)
Chang, V.; Noakes, T. C. Q.; Harrison, N. M.
2018-04-01
Increasing the quantum efficiency (QE) of metal photocathodes is in the design and development of photocathodes for free-electron laser applications. The growth of metal oxide thin films on certain metal surfaces has previously been shown to reduce the work function (WF). Using a photoemission model B. Camino et al. [Comput. Mater. Sci. 122, 331 (2016), 10.1016/j.commatsci.2016.05.025] based on the three-step model combined with density functional theory calculations we predict that the growth of a finite number of MgO(100) or BaO(100) layers on the Ag(100) surface increases significantly the QE compared with the clean Ag(100) surface for a photon energy of 4.7 eV. Different mechanisms for affecting the QE are identified for the different metal oxide thin films. The addition of MgO(100) increases the QE due to the reduction of the WF and the direct excitation of electrons from the Ag surface to the MgO conduction band. For BaO(100) thin films, an additional mechanism is in operation as the oxide film also photoemits at this energy. We also note that a significant increase in the QE for photons with an energy of a few eV above the WF is achieved due to an increase in the inelastic mean-free path of the electrons.
Development of neutron diffuse scattering analysis code by thin film and multilayer film
International Nuclear Information System (INIS)
Soyama, Kazuhiko
2004-01-01
To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering by thin film, roughness of surface of thin film, correlation function, neutron propagation by thin film, diffuse scattering by DWBA theory, measurement model, SDIFFF (neutron diffuse scattering analysis program by thin film) and simulation results are explained. On neutron diffuse scattering by multilayer film, roughness of multilayer film, principle of diffuse scattering, measurement method and simulation examples by MDIFF (neutron diffuse scattering analysis program by multilayer film) are explained. (S.Y.)To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering
Moran, Paul R.
1976-01-01
The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.
Thin films for emerging applications v.16
Francombe, Maurice H
1992-01-01
Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.
Interfaces and thin films physics
International Nuclear Information System (INIS)
Equer, B.
1988-01-01
The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described [fr
Strain induced room temperature ferromagnetism in epitaxial magnesium oxide thin films
Energy Technology Data Exchange (ETDEWEB)
Jin, Zhenghe; Kim, Ki Wook [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Nori, Sudhakar; Lee, Yi-Fang; Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Kumar, D. [Department of Mechanical Engineering, North Carolina A & T State University, Greensboro, North Carolina 27411 (United States); Wu, Fan [Princeton Institute for the Science and Technology of Materials (PRISM), Princeton University, Princeton, New Jersey 08540 (United States); Prater, J. T. [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States)
2015-10-28
We report on the epitaxial growth and room-temperature ferromagnetic properties of MgO thin films deposited on hexagonal c-sapphire substrates by pulsed laser deposition. The epitaxial nature of the films has been confirmed by both θ-2θ and φ-scans of X-ray diffraction pattern. Even though bulk MgO is a nonmagnetic insulator, we have found that the MgO films exhibit ferromagnetism and hysteresis loops yielding a maximum saturation magnetization up to 17 emu/cc and large coercivity, H{sub c} = 1200 Oe. We have also found that the saturation magnetization gets enhanced and that the crystallization degraded with decreased growth temperature, suggesting that the origin of our magnetic coupling could be point defects manifested by the strain in the films. X-ray (θ-2θ) diffraction peak shift and strain analysis clearly support the presence of strain in films resulting from the presence of point defects. Based on careful investigations using secondary ion mass spectrometer and X-ray photoelectron spectroscopy studies, we have ruled out the possibility of the presence of any external magnetic impurities. We discuss the critical role of microstructural characteristics and associated strain on the physical properties of the MgO films and establish a correlation between defects and magnetic properties.
Buckling of Thin Films in Nano-Scale
Directory of Open Access Journals (Sweden)
Li L.A.
2010-06-01
Full Text Available Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.
Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering
Pergolesi, Daniele
2015-02-01
Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.
Tsujiura, Yuichi; Kawabe, Saneyuki; Kurokawa, Fumiya; Hida, Hirotaka; Kanno, Isaku
2015-10-01
We evaluated the effective transverse piezoelectric coefficients (e31,f) of Pb(Zr,Ti)O3 (PZT) thin films from both the direct and converse piezoelectric effects of unimorph cantilevers. (001) preferentially oriented polycrystalline PZT thin films and (001)/(100) epitaxial PZT thin films were deposited on (111)Pt/Ti/Si and (001)Pt/MgO substrates, respectively, by rf-magnetron sputtering, and their piezoelectric responses owing to intrinsic and extrinsic effects were examined. The direct and converse |e31,f| values of the polycrystalline PZT thin films were calculated as 6.4 and 11.5-15.0 C/m2, respectively, whereas those of the epitaxial PZT thin films were calculated as 3.4 and 4.6-4.8 C/m2, respectively. The large |e31,f| of the converse piezoelectric property of the polycrystalline PZT thin films is attributed to extrinsic piezoelectric effects. Furthermore, the polycrystalline PZT thin films show a clear nonlinear piezoelectric contribution, which is the same as the Rayleigh-like behavior reported in bulk PZT. In contrast, the epitaxial PZT thin films on the MgO substrate show a piezoelectric response owing to the intrinsic and linear extrinsic effects, and no nonlinear contribution was observed.
Operating method of amorphous thin film semiconductor element
Energy Technology Data Exchange (ETDEWEB)
Mori, Koshiro; Ono, Masaharu; Hanabusa, Akira; Osawa, Michio; Arita, Takashi
1988-05-31
The existing technologies concerning amorphous thin film semiconductor elements are the technologies concerning the formation of either a thin film transistor or an amorphous Si solar cell on a substrate. In order to drive a thin film transistor for electronic equipment control by the output power of an amorphous Si solar cell, it has been obliged to drive the transistor weth an amorphous solar cell which was formed on a substrate different from that for the transistor. Accordingly, the space for the amorphous solar cell, which was formed on the different substrate, was additionally needed on the substrate for the thin film transistor. In order to solve the above problem, this invention proposes an operating method of an amorphous thin film semiconductor element that after forming an amorphous Si solar cell through lamination on the insulation coating film which covers the thin film transistor formed on the substrate, the thin film transistor is driven by the output power of this solar cell. The invention eliminates the above superfluous space and reduces the size of the amorphous thin film semiconductor element including the electric source. (3 figs)
Soft magnetic properties and damping parameter of (FeCo-Al alloy thin films
Directory of Open Access Journals (Sweden)
Isao Kanada
2017-05-01
Full Text Available For high frequency device applications, a systematic study of the soft magnetic properties and magnetization dynamics of (FeCo-Al alloy thin films has been carried out. A low effective damping parameter αeff of 0.002 and a high saturation magnetization of about 1,800 emu/cc are obtained at y=0.2∼0.3 for (Fe1-yCoy98Al2 alloy thin films deposited onto fused silica and MgO(100 at an ambient temperature during deposition. Those films are of the bcc structure with the orientation normal to the film plane. They possess a columnar structure, grown along the film normal. The column width is found to be about 20 nm for y=0.25. It is concluded that the (FeCo-Al thin films with a damping parameter as low as 0.002 and high saturation magnetization of about 1,800 emu/cc have been successfully fabricated, and that they are potential for future high frequency device applications.
Defect studies of thin ZnO films prepared by pulsed laser deposition
International Nuclear Information System (INIS)
Vlček, M; Čížek, J; Procházka, I; Novotný, M; Bulíř, J; Lančok, J; Anwand, W; Brauer, G; Mosnier, J-P
2014-01-01
Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.
Temperature dependence of LRE-HRE-TM thin films
Li, Zuoyi; Cheng, Xiaomin; Lin, Gengqi; Li, Zhen; Huang, Zhixin; Jin, Fang; Wang, Xianran; Yang, Xiaofei
2003-04-01
Temperature dependence of the properties of RE-TM thin films is very important for MO recording. In this paper, we studied the temperature dependence of the magnetic and magneto-optical properties of the amorphous LRE-HRE-TM single layer thin films and LRE-HRE-TM/HRE-TM couple-bilayered thin films. For LRE-HRE-TM single layer thin films, the temperature dependence of the magnetization was investigated by using the mean field theory. The experimental and theoretical results matched very well. With the LRE substitution in HRE-TM thin film, the compensation temperature Tcomp decreased and the curie temperature Tc remained unchanged. Kerr rotation angle became larger and the saturation magnetization Ms at room temperature increased. For LRE-HRE-TM/HRE-TM couple-bilayered thin films, comparisons of the temperature dependences of the coercivities and Kerr rotation angles were made between isolated sublayers and couple-bilayered thin film.
Structure and electrical properties of Pb(ZrxTi1-x)O3 deposited on textured Pt thin films
International Nuclear Information System (INIS)
Hong, Jongin; Song, Han Wook; Lee, Hee Chul; Lee, Won Jong; No, Kwangsoo
2001-01-01
The texturing of the bottom electrode plays a key role in the structure and electrical properties of Pb(Zr,Ti)O 3 (PZT) thin films. We fabricated Pt bottom electrodes having a different thickness on MgO single crystals at 600 o C by rf magnetron sputtering. As the thickness of platinum (Pt) thin film increased, the preferred orientation of Pt thin film changed from (200) to (111). PZT thin films were fabricated at 450 o C by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition on the textured Pt thin films. The texturing of the bottom electrode caused drastic changes in the C--V characteristics, P--E characteristics, and fatigue characteristics of metal/ferroelectric material/metal (MFM) capacitors. The difference of the electrical properties between the PZT thin films having different texturing was discussed in terms-of the x--y alignment and the interface between electrode and PZT in MFM capacitors. copyright 2001 American Institute of Physics
The interfacial properties of MgCl.sub.2./sub. thin films grown on Ti(001)
Czech Academy of Sciences Publication Activity Database
Karakalos, S.; Siokou, A.; Sutara, F.; Skála, T.; Vitaliy, F.; Ladas, S.; Prince, K.; Matolin, V.; Cháb, Vladimír
2010-01-01
Roč. 133, č. 7 (2010), 074701/1-074701/11 ISSN 0021-9606 Institutional research plan: CEZ:AV0Z10100521 Keywords : silicon, * photoemission * thin films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.920, year: 2010
Tc depression and superconductor-insulator transition in molybdenum nitride thin films
Ichikawa, F.; Makise, K.; Tsuneoka, T.; Maeda, S.; Shinozaki, B.
2018-03-01
We have studied that the Tc depression and the superconductor-insulator transition (SIT) in molybdenum nitride (MoN) thin films. Thin films were fabricated by reactive DC magnetron sputtering method onto (100) MgO substrates in the mixture of Ar and N2 gases. Several dozen MoN thin films were prepared in the range of 3 nm < thickness d < 60 nm. The resistance was measured by a DC four-probe technique. It is found that Tc decreases from 6.6 K for thick films with increase of the normal state sheet resistance {R}{{sq}}{{N}} and experimental data were fitted to the Finkel’stein formula using the bulk superconducting transition temperature Tc 0 = 6.45 K and the elastic scattering time of electron τ = 1.6 × 10‑16 s. From this analysis the critical sheet resistance Rc is found about 2 kΩ, which is smaller than the quantum sheet resistance R Q. This value of Rc is almost the same as those for 2D NbN films. The value of τ for MoN films is also the similar value for NbN films 1.0 × 10‑16 s, while Tc 0 is different from that for NbN films 14.85 K. It is indicated that the mechanism of SIT for MoN films is similar to that of NbN films, while the mean free path ℓ for MoN films is larger than that for NbN films.
International Nuclear Information System (INIS)
Brasse, Matthias
2014-01-01
Torque magnetometry at low temperature is performed to investigate the magnetic properties of MnSi thin films, of a CrB 2 single crystal and of a two-dimensional electron system (2DESs) formed at the interface of MgZnO/ZnO. The magnetic anisotropy and phase diagram of MnSi as well as information on the electronic structure of CrB 2 are obtained. The MgZnO/ZnO 2DESs exhibits the de Haas-van Alphen effect and non-equilibrium currents which are analyzed in order to determine ground state properties and excited states, respectively.
International Nuclear Information System (INIS)
Loong, Li Ming; Deorani, Praveen; Qiu, Xuepeng; Yang, Hyunsoo
2015-01-01
Current-induced spin-orbit torques (SOTs) have the potential to revolutionize magnetization switching technology. Here, we investigate SOT in a heavy metal (HM)/Co 2 FeAl 0.5 Si 0.5 (CFAS)/MgO thin film structure with perpendicular magnetic anisotropy (PMA), where the HM is either Pt or Ta. Our results suggest that both the spin Hall effect and the Rashba effect contribute significantly to the effective fields in the Pt underlayer samples. Moreover, after taking the PMA energies into account, current-induced SOT-based switching studies of both the Pt and Ta underlayer samples suggest that the two HM underlayers yield comparable switching efficiency in the HM/CFAS/MgO material system
Application-related properties of giant magnetostrictive thin films
International Nuclear Information System (INIS)
Lim, S.H.; Kim, H.J.; Na, S.M.; Suh, S.J.
2002-01-01
In an effort to facilitate the utilization of giant magnetostrictive thin films in microdevices, application-related properties of these thin films, which include induced anisotropy, residual stress and corrosion properties, are investigated. A large induced anisotropy with an energy of 6x10 4 J/m 3 is formed in field-sputtered amorphous Sm-Fe-B thin films, resulting in a large magnetostriction anisotropy. Two components of residual stress, intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film, are identified. The variation of residual stress with fabrication parameter and annealing temperature, and its influence on mechanical bending and magnetic properties are examined. Better corrosion properties are observed in Sm-Fe thin films than in Tb-Fe. Corrosion properties of Tb-Fe thin films, however, are much improved with the introduction of nitrogen to the thin films without deteriorating magnetostrictive properties
Investigation of the resistive transition of MgB2 thin film through current noise
International Nuclear Information System (INIS)
Gandini, C; Rajteri, M; Portesi, C; Monticone, E; Masoero, A; Mazzetti, P
2006-01-01
In this paper we present measurements concerning the current noise produced during the resistive transition in a MgB 2 polycrystalline thin film. The power spectrum of the current noise, observed when the temperature is slowly changed across its critical value, presents a large electrical noise of the 1/f n type (n ≅ 3) over a quite wide range of frequencies. This noise may be considered as generated by the abrupt creation of resistive strips across the specimen constituted by grains which have undergone the resistive transition. A computer model that takes into account fluctations of the grain critical currents and of the number of grain per strips, has been developed to simulate the resistive transition and to evaluate the noise power spectrum. When the temperature is incresed and reaches its critical value, resistive strips are formed according to a percolative process, giving rise to resistance steps which are at the origin of the noise. The theoretical results obtained by this model are in good agreement, concerning both the shape and intensity of the noise power spectrum, with the experimental data directly measured on the specimen
MgB2 Thin-Film Bolometer for Applications in Far-Infrared Instruments on Future Planetary Missions
Lakew, B.; Aslam, S.; Brasunas, J.; Cao, N.; Costen, N.; La, A.; Stevenson, T.; Waczynski, A.
2012-01-01
A SiN membrane based MgB2 thin-film bolometer, with a non-optimized absorber, has been fabricated that shows an electrical noise equivalent power of 256 fW/square root Hz operating at 30 Hz in the 8.5 - 12.35 micron spectral bandpass. This value corresponds to an electrical specific detectivity of 7.6 x 10(exp 10) cm square root Hz/W. The bolometer shows a measured blackbody (optical) specific detectivity of 8.8 x 10(exp 9) cm square root Hz/W, with a responsivity of 701.5 kV/W and a first-order time constant of 5.2 ms. It is predicted that with the inclusion of a gold black absorber that a blackbody specific detectivity of 6.4 x 10(exp 10) cm/square root Hz/W at an operational frequency of 10 Hz, can be realized for integration into future planetary exploration instrumentation where high sensitivity is required in the 17 - 250 micron spectral wavelength range.
DEFF Research Database (Denmark)
Grivel, Jean-Claude; Kepa, Katarzyna; Hlásek, T.
2013-01-01
Bi2Sr2CaCu2O8 thin films have been deposited on MgO single crystal substrates by spin-coating a solution based on 2-ethylhexanoate precursors. Pyrolysis takes place between 200°C and 450°C and is accompanied by the release of 2-ethylhexanoic acid, CO2 and H2O vapour. Highly c-axis oriented Bi2Sr2Ca...
Epitaxial Oxide Thin Films Grown by Solid Source Metal-Organic Chemical Vapor Deposition.
Lu, Zihong
1995-01-01
The conventional liquid source metal-organic chemical vapor deposition (MOCVD) technique is capable of producing large area, high quality, single crystal semiconductor films. However, the growth of complex oxide films by this method has been hampered by a lack of suitable source materials. While chemists have been actively searching for new source materials, the research work reported here has demonstrated the successful application of solid metal-organic sources (based on tetramethylheptanedionate) to the growth of high quality thin films of binary compound cerium dioxide (CeO_2), and two more complex materials, the ternary compound lithium niobate (LiNbO_3), with two cations, and the quaternary compound strontium barium niobate (SBN), with three cations. The growth of CeO_2 thin films on (1012)Al_2O_3 substrates has been used as a model to study the general growth behavior of oxides. Factors affecting deposition rate, surface morphology, out-of-plane mosaic structure, and film orientation have been carefully investigated. A kinetic model based on gas phase prereaction is proposed to account for the substrate temperature dependence of film orientation found in this system. Atomically smooth, single crystal quality cerium dioxide thin films have been obtained. Superconducting YBCO films sputtered on top of solid source MOCVD grown thin cerium dioxide buffer layers on sapphire have been shown to have physical properties as good as those of YBCO films grown on single crystal MgO substrates. The thin film growth of LiNbO_3 and Sr_{1-x}Ba _{x}Nb_2 O_6 (SBN) was more complex and challenging. Phase purity, transparency, in-plane orientation, and the ferroelectric polarity of LiNbO _3 films grown on sapphire substrates was investigated. The first optical quality, MOCVD grown LiNbO _3 films, having waveguiding losses of less than 2 dB/cm, were prepared. An important aspect of the SBN film growth studies involved finding a suitable single crystal substrate material. Mg
International Nuclear Information System (INIS)
Tadanaga, Kiyoharu; Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro; Duran, Alicia; Aparacio, Mario
2014-01-01
Highlights: • LiMn 2 O 4 thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn 2 O 4 thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn 2 O 4 cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles
P-type CuxS thin films: Integration in a thin film transistor structure
International Nuclear Information System (INIS)
Nunes de Carvalho, C.; Parreira, P.; Lavareda, G.; Brogueira, P.; Amaral, A.
2013-01-01
Cu x S thin films, 80 nm thick, are deposited by vacuum thermal evaporation of sulfur-rich powder mixture, Cu 2 S:S (50:50 wt.%) with no intentional heating of the substrate. The process of deposition occurs at very low deposition rates (0.1–0.3 nm/s) to avoid the formation of Cu or S-rich films. The evolution of Cu x S films surface properties (morphology/roughness) under post deposition mild annealing in air at 270 °C and their integration in a thin film transistor (TFT) are the main objectives of this study. Accordingly, Scanning Electron Microscopy studies show Cu x S films with different surface morphologies, depending on the post deposition annealing conditions. For the shortest annealing time, the Cu x S films look to be constructed of grains with large dimension at the surface (approximately 100 nm) and consequently, irregular shape. For the longest annealing time, films with a fine-grained surface are found, with some randomly distributed large particles bound to this fine-grained surface. Atomic Force Microscopy results indicate an increase of the root-mean-square roughness of Cu x S surface with annealing time, from 13.6 up to 37.4 nm, for 255 and 345 s, respectively. The preliminary integration of Cu x S films in a TFT bottom-gate type structure allowed the study of the feasibility and compatibility of this material with the remaining stages of a TFT fabrication as well as the determination of the p-type characteristic of the Cu x S material. - Highlights: • Surface properties of annealed Cu x S films. • Variation of conductivity with annealing temperatures of Cu x S films. • Application of evaporated Cu x S films in a thin film transistor (TFT) structure. • Determination of Cu x S p-type characteristic from TFT behaviour
Structural characterization of epitaxial LiFe_5O_8 thin films grown by chemical vapor deposition
International Nuclear Information System (INIS)
Loukya, B.; Negi, D.S.; Sahu, R.; Pachauri, N.; Gupta, A.; Datta, R.
2016-01-01
We report on detailed microstructural and atomic ordering characterization by transmission electron microscopy in epitaxial LiFe_5O_8 (LFO) thin films grown by chemical vapor deposition (CVD) on MgO (001) substrates. The experimental results of LFO thin films are compared with those for bulk LFO single crystal. Electron diffraction studies indicate weak long-range ordering in LFO (α-phase) thin films in comparison to bulk crystal where strong ordering is observed in optimally annealed samples. The degree of long-range ordering depends on the growth conditions and the thickness of the film. Annealing experiment along with diffraction study confirms the formation of α-Fe_2O_3 phase in some regions of the films. This suggests that under certain growth conditions γ-Fe_2O_3-like phase forms in some pockets in the as-grown LFO thin films that then convert to α-Fe_2O_3 on annealing. - Highlights: • Atomic ordering in LiFe_5O_8 bulk single crystal and epitaxial thin films. • Electron diffraction studies reveal different level of ordering in the system. • Formation of γ-Fe_2O_3 like phase has been observed.
Semiconductor-nanocrystal/conjugated polymer thin films
Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia
2014-06-17
The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.
Thin liquid films dewetting and polymer flow
Blossey, Ralf
2012-01-01
This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system. What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films. Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...
Self-assembly of dodecaphenyl POSS thin films
Handke, Bartosz; Klita, Łukasz; Niemiec, Wiktor
2017-12-01
The self-assembly abilities of Dodecaphenyl Polyhedral Oligomeric Silsesquioxane thin films on Si(1 0 0) surfaces were studied. Due to their thermal properties - relatively low sublimation temperature and preservation of molecular structure - cage type silsesquioxanes are ideal material for the preparation of a thin films by Physical Vapor Deposition. The Ultra-High Vacuum environment and the deposition precision of the PVD method enable the study of early stages of thin film growth and its molecular organization. X-ray Reflectivity and Atomic Force Microscopy measurements allow to pursuit size-effects in the structure of thin films with thickness ranges from less than a single molecular layer up to several tens of layers. Thermal treatment of the thin films triggered phase change: from a poorly ordered polycrystalline film into a well-ordered multilayer structure. Self-assembly of the layers is the effect of the π-stacking of phenyl rings, which force molecules to arrange in a superlattice, forming stacks of alternating organic-inorganic layers.
Multicomponent doped barium strontium titanate thin films for tunable microwave applications
Alema, Fikadu Legesse
In recent years there has been enormous progress in the development of barium strontium titanate (BST) films for tunable microwave applications. However, the properties of BST films still remain inferior compared to bulk materials, limiting their use for microwave technology. Understanding the film/substrate mismatch, microstructure, and stoichiometry of BST films and finding the necessary remedies are vital. In this work, BST films were deposited via radio frequency magnetron sputtering method and characterized both analytically and electrically with the aim of optimizing their properties. The stoichiometry, crystal structure, and phase purity of the films were studied by varying the oxygen partial pressure (OPP) and total gas pressure (TGP) in the chamber. A better stoichiometric match between film and target was achieved when the TGP is high (> 30 mTorr). However, the O2/Ar ratio should be adjusted as exceeding a threshold of 2 mTorr in OPP facilitates the formation of secondary phases. The growth of crystalline film on platinized substrates was achieved only with a lower temperature grown buffer layer, which acts as a seed layer by crystallizing when the temperature increases. Concurrent Mg/Nb doping has significantly improved the properties of BST thin films. The doped film has shown an average tunability of 53%, which is only ˜8 % lower than the value for the undoped film. This drop is associated with the Mg ions whose detrimental effects are partially compensated by Nb ions. Conversely, the doping has reduced the dielectric loss by ˜40 % leading to a higher figure of merit. Moreover, the two dopants ensure a charge neutrality condition which resulted in significant leakage current reduction. The presence of large amounts of empty shallow traps related to Nb Ti localize the free carriers injected from the contacts; thus increase the device control voltage substantially (>10 V). A combinatorial thin film synthesis method based on co-sputtering of two BST
Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer
International Nuclear Information System (INIS)
Pecz, B.; El-Shaer, A.; Bakin, A.; Mofor, A.-C.; Waag, A.; Stoemenos, J.
2006-01-01
The structural characteristics of the ZnO film grown on sapphire substrate using a thin MgO buffer layer were studied using transmission electron microscopy and high-resolution x-ray diffraction. The growth was carried out in a modified plasma-molecular beam epitaxy system. The observed misfit dislocations were well confined at the sapphire overgrown interface exhibiting domain matching epitaxy, where the integral multiples of lattice constants match across the interface. The main extended defects in the ZnO film were the threading dislocations having a mean density of 4x10 9 cm -2 . The formation of the MgO buffer layer as well as the ZnO growth were monitored in situ by reflection high-energy electron diffraction. The very thin ∼1 nm, MgO buffer layer can partially interdiffuse with the ZnO as well as react with the Al 2 O 3 substrate forming an intermediate epitaxial layer having the spinel (MgO/Al 2 O 3 ) structure
Organic thin films and surfaces directions for the nineties
Ulman, Abraham
1995-01-01
Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther
International Nuclear Information System (INIS)
Fang, Dongyu; Lin, Kui; Xue, Tao; Cui, Can; Chen, Xiaoping; Yao, Pei; Li, Huijun
2014-01-01
Highlights: • Mg–Al co-doped ZnO thin films were prepared by sol–gel spin coating method. • The effects of Al doping on structural and optical properties of AMZO thin films were investigated. • The EDS spectra confirmed presence of Mg and Al elements in AMZO thin films. • The optical band gap of AMZO thin films increased with Al doping concentration increased. • The origin of the photoluminescence emissions was discussed. -- Abstract: Mg–Al co-doped ZnO (AMZO) thin films were successfully deposited onto quartz glass substrates by sol–gel spin coating method. The structure, surface morphology, composition, optical transmittance, and photoluminescence properties of AMZO thin films were characterized through X-ray diffraction, scanning electron microscopy with energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy, UV–VIS–NIR spectrophotometry, and fluorescence spectrophotometry. The results indicated that AMZO thin films exhibited preferred orientation growth along the c-axis, and the full width at half maximum of the (0 0 2) diffraction peak decreased first and subsequently increased, reaching a minimum of approximately 0.275° at 3% Al content. The calculated crystallite size increased from 30.21 nm to 40.73 nm. Al doping content increased from 1% to 3% and subsequently reached 19.33 nm for Al doping content at 5%. The change in lattice parameters was demonstrated by the c/a ratio, residual stress, bond length, and volume per unit cell. EDS analysis confirmed the presence of Mg and Al elements in ZnO thin films. The atomic percentage of Mg and Al elements was nearly equal to their nominal stoichiometry within the experimental error. In addition, the optical transmittance of AMZO thin films was over 85% in the visible region, and the optical band gap increased with increasing Al doping concentration. Room temperature photoluminescence showed ultraviolet emission peak and defect emission peak. The defect emission peak of
Novel chemical analysis for thin films
International Nuclear Information System (INIS)
Usui, Toshio; Kamei, Masayuki; Aoki, Yuji; Morishita, Tadataka; Tanaka, Shoji
1991-01-01
Scanning electron microscopy and total-reflection-angle X-ray spectroscopy (SEM-TRAXS) was applied for fluorescence X-ray analysis of 50A- and 125A-thick Au thin films on Si(100). The intensity of the AuM line (2.15 keV) emitted from the Au thin films varied as a function of the take-off angle (θ t ) with respect to the film surface; the intensity of AuM line from the 125A-thick Au thin film was 1.5 times as large as that of SiK α line (1.74 keV) emitted from the Si substrate when θ t = 0deg-3deg, in the vicinity of a critical angle for total external reflection of the AuM line at Si (0.81deg). In addition, the intensity of the AuM line emitted from the 50A-thick Au thin film was also sufficiently strong for chemical analysis. (author)
Epitaxial Fe16N2 thin film on nonmagnetic seed layer
Hang, Xudong; Zhang, Xiaowei; Ma, Bin; Lauter, Valeria; Wang, Jian-Ping
2018-05-01
Metastable α″ -Fe16N2 has attracted much interest as a candidate for rare-earth-free hard magnetic materials. We demonstrate that Fe16N2 thin films were grown epitaxially on Cr seed layers with MgO (001) substrates by facing-target sputtering. Good crystallinity with the epitaxial relation MgO (001 )[110 ] ∥ Cr (001 )[100 ] ∥ Fe16N2 (001 )[100 ] was obtained. The chemical order parameter, which quantifies the degree of N ordering in the Fe16N2 (the N-disordered phase is α' -Fe8N martensite), reaches 0.75 for Cr-seeded samples. Cr has a perfect lattice constant match with Fe16N2, and no noticeable strain can be assigned to Fe16N2. The intrinsic saturation magnetization of this non-strained Fe16N2 thin film at room temperature is determined to be 2.31 T by polarized neutron reflectometry and confirmed with vibrating sample magnetometry. Our work provides a platform to directly study the magnetic properties of high purity Fe16N2 films with a high order parameter.
Nanostructured thin film coatings with different strengthening effects
Directory of Open Access Journals (Sweden)
Panfilov Yury
2017-01-01
Full Text Available A number of articles on strengthening thin film coatings were analyzed and a lot of unusual strengthening effects, such as super high hardness and plasticity simultaneously, ultra low friction coefficient, high wear-resistance, curve rigidity increasing of drills with small diameter, associated with process formation of nanostructured coatings by the different thin film deposition methods were detected. Vacuum coater with RF magnetron sputtering system and ion-beam source and arc evaporator for nanostructured thin film coating manufacture are represented. Diamond Like Carbon and MoS2 thin film coatings, Ti, Al, Nb, Cr, nitride, carbide, and carbo-nitride thin film materials are described as strengthening coatings.
Energy Technology Data Exchange (ETDEWEB)
Zweibel, K.
1998-11-19
The motivation to develop thin film technologies dates back to the inception of photovoltaics. It is an idea based on achieving truly low-cost photovoltaics appropriate for mass production and energy significant markets. The key to the idea is the use of pennies worth of active materials. Since sunlight carries relatively little energy in comparison with combustion-based energy sources, photovoltaic (PV) modules must be cheap to produce energy that can be competitive. Thin films are presumed to be the answer to that low-cost requirement. But how cheap do they have to be? The following is an oversimplified analysis that allows some insight into this question.
Thin films: Past, present, future
Energy Technology Data Exchange (ETDEWEB)
Zweibel, K
1995-04-01
This report describes the characteristics of the thin film photovoltaic modules necessary for an acceptable rate of return for rural areas and underdeveloped countries. The topics of the paper include a development of goals of cost and performance for an acceptable PV system, a review of current technologies for meeting these goals, issues and opportunities in thin film technologies.
Non-linear optics of nano-scale pentacene thin film
Yahia, I. S.; Alfaify, S.; Jilani, Asim; Abdel-wahab, M. Sh.; Al-Ghamdi, Attieh A.; Abutalib, M. M.; Al-Bassam, A.; El-Naggar, A. M.
2016-07-01
We have found the new ways to investigate the linear/non-linear optical properties of nanostructure pentacene thin film deposited by thermal evaporation technique. Pentacene is the key material in organic semiconductor technology. The existence of nano-structured thin film was confirmed by atomic force microscopy and X-ray diffraction. The wavelength-dependent transmittance and reflectance were calculated to observe the optical behavior of the pentacene thin film. It has been observed the anomalous dispersion at wavelength λ 800. The non-linear refractive index of the deposited films was investigated. The linear optical susceptibility of pentacene thin film was calculated, and we observed the non-linear optical susceptibility of pentacene thin film at about 6 × 10-13 esu. The advantage of this work is to use of spectroscopic method to calculate the liner and non-liner optical response of pentacene thin films rather than expensive Z-scan. The calculated optical behavior of the pentacene thin films could be used in the organic thin films base advanced optoelectronic devices such as telecommunications devices.
D. B. Beringer; W. M. Roach; C. Clavero; C. E. Reece; R. A. Lukaszew
2013-01-01
This paper describes surface studies to address roughness issues inherent to thin film coatings deposited onto superconducting radio frequency (SRF) cavities. This is particularly relevant for multilayered thin film coatings that are being considered as a possible scheme to overcome technical issues and to surpass the fundamental limit of ∼50 MV/m accelerating gradient achievable with bulk niobium. In 2006, a model by Gurevich [Appl. Phys. Lett. 88, 012511 (2006)APPLAB0003-695110.1063/1.2162...
Oxidation of ruthenium thin films using atomic oxygen
Energy Technology Data Exchange (ETDEWEB)
McCoy, A.P.; Bogan, J.; Brady, A.; Hughes, G.
2015-12-31
In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (~ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO{sub 2} at exposures as low as ~ 10{sup 2} L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO{sub 2}. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment. - Highlights: • X-ray photoelectron spectroscopy study of the oxidation of Ru thin films • Oxidation of Ru thin films using atomic oxygen • Comparison between atomic oxygen and molecular oxygen treatments on Ru thin films • Fully oxidised RuO{sub 2} thin films formed with low exposures to atomic oxygen.
Transport measurements on superconducting YBa2Cu3O7-δ thin film lines
International Nuclear Information System (INIS)
Moeckly, B.H.; Lathrop, D.K.; Redinbo, G.F.; Russek, S.E.; Buhrman, R.A.
1990-01-01
Critical current densities, magnetic field response, and microwave response have been measured for laser ablated YBa 2 Cu 3 O 7-δ thin film lines on MgO and SrTiO 3 substrates. Films on SrTiO 3 have critical current densities > 1 x 10 6 A/cm 2 at 77 K and show uniform transport properties in lines of all sizes. Films on MgO have critical current densities which range between 10 2 and 10 6 A/cm 2 at 77 K and show considerable variation from device to device on the same chip. Narrow lines on MgO with low critical current densities show Josephson weak link structure which includes RSJ-like IV curves, microwave induced constant voltage steps, and a high sensitivity to magnetic field. The presence of the Josephson weak links if correlated with small amounts of misaligned grains in film on MgO
Thin Films in the Photovoltaic Industry
International Nuclear Information System (INIS)
Jaeger-Waldau, A.
2008-03-01
In the past years, the yearly world market growth rate for Photovoltaics was an average of more than 40%, which makes it one of the fastest growing industries at present. Business analysts predict the market volume to increase to 40 billion euros in 2010 and expect rising profit margins and lower prices for consumers at the same time. Today PV is still dominated by wafer based Crystalline Silicon Technology as the 'working horse' in the global market, but thin films are gaining market shares. For 2007 around 12% are expected. The current silicon shortage and high demand has kept prices higher than anticipated from the learning curve experience and has widened the windows of opportunities for thin film solar modules. Current production capacity estimates for thin films vary between 3 and 6 GW in 2010, representing a 20% market share for these technologies. Despite the higher growth rates for thin film technologies compared with the industry average, Thin Film Photovoltaic Technologies are still facing a number of challenges to maintain this growth and increase market shares. The four main topics which were discussed during the workshop were: Potential for cost reduction; Standardization; Recycling; Performance over the lifetime.
Thin film interference optics for imaging the O II 834-A airglow
Seely, John F.; Hunter, William R.
1991-01-01
Normal incidence thin film interference mirrors and filters have been designed to image the O II 834-A airglow. It is shown that MgF2 is a useful spacer material for this wavelength region. The mirrors consist of thin layers of MgF2 in combination with other materials that are chosen to reflect efficiently in a narrow band centered at 834 A. Peak reflectance of 60 percent can be obtained with a passband 200 A wide. Al/MgF2/Si and Al/MgF2/SiC interference coatings have been designed to reflect 834 A and to absorb the intense H I 1216 A airglow. An In/MgF2/In interference filter is designed to transmit 834 A and attenuate 1216 A radiation. Interference photocathode coatings for rejecting 1216 A radiation are also discussed.
Nanostructured thin films and coatings functional properties
Zhang, Sam
2010-01-01
The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e
Intrinsically conductive polymer thin film piezoresistors
DEFF Research Database (Denmark)
Lillemose, Michael; Spieser, Martin; Christiansen, N.O.
2008-01-01
We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...
Devarayan, Kesavan; Park, Jiyoung; Kim, Hak-Yong; Kim, Byoung-Suhk
2017-05-01
In this study, we present a highly efficient and economical solution called as 'in situ hydrogenation' for preparation of highly conductive thin film electrode based on silver nanodendrites. The silver nanodendrite (AgND)/cellulose acetate (CA) thin film electrodes exhibited sheet resistance ranging from 0.32ohm/sq to 122.1ohm/sq which could be controlled by changing the concentration of both silver and polymer. In addition, these electrodes exhibited outstanding toughness during the bending test. Further, these thin film electrodes have great potential for scale-up with an average weight of 3mg/cm 2 and can be also combined with active nanomaterials such as multiwalled carbon nanotubes (MWCNTs) to fabricate AgND/CA/MWCNTs thin film for high-performance flexible supercapacitor electrode. The AgND/CA/MWCNTs electrodes exhibited a maximum specific capacitance of 237F/g at a current density of 0.3A/g. After 1000 cycles, the AgND/MWCNT/CA exhibited a decrease of 16.0% of specific capacitance. Copyright © 2017 Elsevier Ltd. All rights reserved.
Thermal conductivity model for nanoporous thin films
Huang, Congliang; Zhao, Xinpeng; Regner, Keith; Yang, Ronggui
2018-03-01
Nanoporous thin films have attracted great interest because of their extremely low thermal conductivity and potential applications in thin thermal insulators and thermoelectrics. Although there are some numerical and experimental studies about the thermal conductivity of nanoporous thin films, a simplified model is still needed to provide a straightforward prediction. In this paper, by including the phonon scattering lifetimes due to film thickness boundary scattering, nanopore scattering and the frequency-dependent intrinsic phonon-phonon scattering, a fitting-parameter-free model based on the kinetic theory of phonon transport is developed to predict both the in-plane and the cross-plane thermal conductivities of nanoporous thin films. With input parameters such as the lattice constants, thermal conductivity, and the group velocity of acoustic phonons of bulk silicon, our model shows a good agreement with available experimental and numerical results of nanoporous silicon thin films. It illustrates that the size effect of film thickness boundary scattering not only depends on the film thickness but also on the size of nanopores, and a larger nanopore leads to a stronger size effect of the film thickness. Our model also reveals that there are different optimal structures for getting the lowest in-plane and cross-plane thermal conductivities.
International Nuclear Information System (INIS)
Sahoo, N.K.; Thakur, S.; Senthilkumar, M.; Das, N.C.
2005-01-01
Thickness-dependent index non-linearity in thin films has been a thought provoking as well as intriguing topic in the field of optical coatings. The characterization and analysis of such inhomogeneous index profiles pose several degrees of challenges to thin-film researchers depending upon the availability of relevant experimental and process-monitoring-related information. In the present work, a variety of novel experimental non-linear index profiles have been observed in thin films of MgOAl 2 O 3 ZrO 2 ternary composites in solid solution under various electron-beam deposition parameters. Analysis and derivation of these non-linear spectral index profiles have been carried out by an inverse-synthesis approach using a real-time optical monitoring signal and post-deposition transmittance and reflection spectra. Most of the non-linear index functions are observed to fit polynomial equations of order seven or eight very well. In this paper, the application of such a non-linear index function has also been demonstrated in designing electric-field-optimized high-damage-threshold multilayer coatings such as normal- and oblique-incidence edge filters and a broadband beam splitter for p-polarized light. Such designs can also advantageously maintain the microstructural stability of the multilayer structure due to the low stress factor of the non-linear ternary composite layers. (orig.)
Photoinduced hydrophobic surface of graphene oxide thin films
International Nuclear Information System (INIS)
Zhang Xiaoyan; Song Peng; Cui Xiaoli
2012-01-01
Graphene oxide (GO) thin films were deposited on transparent conducting oxide substrates and glass slides by spin coating method at room temperature. The wettability of GO thin films before and after ultraviolet (UV) irradiation was characterized with water contact angles, which increased from 27.3° to 57.6° after 3 h of irradiation, indicating a photo-induced hydrophobic surface. The UV–vis absorption spectra, Raman spectroscopy, X-ray photoelectron spectroscopy, and conductivity measurements of GO films before and after UV irradiation were taken to study the mechanism of photoinduced hydrophobic surface of GO thin films. It is demonstrated that the photoinduced hydrophobic surface is ascribed to the elimination of oxygen-containing functional groups on GO molecules. This work provides a simple strategy to control the wettability properties of GO thin films by UV irradiation. - Highlights: ► Photoinduced hydrophobic surface of graphene oxide thin films has been demonstrated. ► Elimination of oxygen-containing functional groups in graphene oxide achieved by UV irradiation. ► We provide novel strategy to control surface wettability of GO thin films by UV irradiation.
Thin film fabrication and transport properties of the heavy Fermion oxide LiV{sub 2}O{sub 4}
Energy Technology Data Exchange (ETDEWEB)
Niemann, Ulrike [Max Planck Institute for Solid State Research, Stuttgart (Germany); Hirai, Daigorou [University of Tokyo, Tokyo (Japan); Takagi, Hidenori [Max Planck Institute for Solid State Research, Stuttgart (Germany); University of Tokyo, Tokyo (Japan); Institute for Functional Matter and Quantum Technologies, University of Stuttgart, Stuttgart (Germany)
2016-07-01
The spinel compound LiV{sub 2}O{sub 4} is well-known for its heavy fermion behaviour, although it contains no f-electron bands. This unexpected behaviour has been a subject of several studies, but the origin of it is still not fully understood. In this study, we successfully fabricated single crystalline epitaxial thin film of LiV{sub 2}O{sub 4} on SrTiO{sub 3}, LSAT and MgO substrates, using a pulsed laser deposition technique. By changing film thickness and substrate materials, dimensionality and epitaxial strain was controlled. The formation of an epitaxially grown LiV{sub 2}O{sub 4} phase has been confirmed by X-ray diffraction measurements. LiV{sub 2}O{sub 4} films on MgO were found to be strained, due to the small lattice mismatch, in contrast to fully relaxed films on SrTiO{sub 3}.The heavy fermion behaviour of bulk LiV{sub 2}O{sub 4} at low temperatures is well reproduced in thick enough (∼ 7 nm) films on SrTiO{sub 3} substrates. In contrast, an insulating phase was found in strained LiV{sub 2}O{sub 4} thin films on MgO substrates, revealing the key role of the lattice in stabilising the metallic ground state. In this presentation, we discuss the thin film fabrication and the effect of epitaxial strain on heavy fermion behaviour in LiV{sub 2}O{sub 4}.
International Nuclear Information System (INIS)
Macleod, H.A.
1979-01-01
The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)
Yoon, Soon-Gil; Lee, Jai-Chan; Safari, A.
1994-09-01
The chemical composition and electrical properties were investigated for epitaxially crystallized (Ba(0.5),Sr(0.5))TiO3 (BST) films deposited on Pt/MgO and YBa2Cu3O(7-x) (YBCO)/MgO substrates by the laser ablation technique. Rutherford backscattering spectroscopy analysis shows that thin films on Pt/MgO have almost the same stoichiometric composition as the target material. Films deposited at 600 C exhibited an excellent epitaxial growth, a dielectric constant of 430, and a dissipation factor of 0.02 at 10 kHz frequency. They have a charge storage density of 40 fC/sq micron at an applied electric field of 0.15 MV/cm. Leakage current density of BST thin films on Pt/MgO was smaller than on YBCO/MgO. Their leakage current density is about 0.8 microA/sq cm at an applied electric field of 0.15 MV/cm.
Optical thin films and coatings from materials to applications
Flory, Francois
2013-01-01
Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...
Tunable zinc interstitial related defects in ZnMgO and ZnCdO films
International Nuclear Information System (INIS)
Li, Wanjun; Qin, Guoping; Fang, Liang; Ye, Lijuan; Wu, Fang; Ruan, Haibo; Zhang, Hong; Kong, Chunyang; Zhang, Ping
2015-01-01
We report tunable band gap of ZnO thin films grown on quartz substrates by radio frequency magnetron sputtering. The zinc interstitial (Zn i ) defects in ZnO films were investigated by X-ray diffraction, Raman scattering, Auger spectra, first-principle calculations, and Hall measurement. Undoped ZnO film exhibits an anomalous Raman mode at 275 cm −1 . We first report that 275 cm −1 mode also can be observed in ZnO films alloyed with Mg and Cd, whose Raman intensities, interestingly, decrease and increase with increasing Mg and Cd alloying content, respectively. Combined with the previous investigations, it is deduced that 275 cm −1 mode is attributed to Zn i related defects, which is demonstrated by our further experiment and theoretical calculation. Consequently, the concentration of Zn i related defects in ZnO can be tuned by alloying Mg and Cd impurity, which gives rise to different conductivity in ZnO films. These investigations help to further understand the controversial origin of the additional Raman mode at 275 cm −1 and also the natural n-type conductivity in ZnO
Tunable zinc interstitial related defects in ZnMgO and ZnCdO films
Energy Technology Data Exchange (ETDEWEB)
Li, Wanjun; Qin, Guoping [State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing 401331 (China); Key Laboratory of Optoelectronic Functional Materials of Chongqing, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, Chongqing 401331 (China); Fang, Liang, E-mail: lfang@cqu.edu.cn, E-mail: kchy@163.com; Ye, Lijuan; Wu, Fang [State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing 401331 (China); Ruan, Haibo [Research Center for Materials Interdisciplinary Sciences, Chongqing University of Arts and Sciences, Chongqing 402160 (China); Zhang, Hong; Kong, Chunyang, E-mail: lfang@cqu.edu.cn, E-mail: kchy@163.com; Zhang, Ping [Key Laboratory of Optoelectronic Functional Materials of Chongqing, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, Chongqing 401331 (China)
2015-04-14
We report tunable band gap of ZnO thin films grown on quartz substrates by radio frequency magnetron sputtering. The zinc interstitial (Zn{sub i}) defects in ZnO films were investigated by X-ray diffraction, Raman scattering, Auger spectra, first-principle calculations, and Hall measurement. Undoped ZnO film exhibits an anomalous Raman mode at 275 cm{sup −1}. We first report that 275 cm{sup −1} mode also can be observed in ZnO films alloyed with Mg and Cd, whose Raman intensities, interestingly, decrease and increase with increasing Mg and Cd alloying content, respectively. Combined with the previous investigations, it is deduced that 275 cm{sup −1} mode is attributed to Zn{sub i} related defects, which is demonstrated by our further experiment and theoretical calculation. Consequently, the concentration of Zn{sub i} related defects in ZnO can be tuned by alloying Mg and Cd impurity, which gives rise to different conductivity in ZnO films. These investigations help to further understand the controversial origin of the additional Raman mode at 275 cm{sup −1} and also the natural n-type conductivity in ZnO.
Sputtering materials for VLSI and thin film devices
Sarkar, Jaydeep
2010-01-01
An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p
Perovskite oxynitride LaTiOxNy thin films: Dielectric characterization in low and high frequencies
International Nuclear Information System (INIS)
Lu, Y.; Ziani, A.; Le Paven-Thivet, C.; Benzerga, R.; Le Gendre, L.; Fasquelle, D.; Kassem, H.
2011-01-01
Lanthanum titanium oxynitride (LaTiO x N y ) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiO x N y thin films deposited on conductive single crystal Nb–STO show a dielectric constant ε′ ≈ 140 with low losses tanδ = 0.012 at 100 kHz. For the LaTiO x N y polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO 2 /Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiO x N y films deposited on MgO substrate present a high dielectric constant with low losses (ε′ ≈ 170, tanδ = 0.011, 12 GHz).
Liang, Y. H.; Towe, E.
2018-03-01
Doping of high aluminum-containing (Al,Ga)N thin films has remained a challenging problem that has hindered progress in the development of deep ultraviolet light-emitters. This paper reports on the synthesis and use of heavily doped (Al,Ga)N films in deep ultraviolet (˜274 nm) light-emitting structures; these structures were synthesized by molecular beam epitaxy under liquid-metal growth conditions that facilitate the incorporation of extremely high density of Mg dopant impurities (up to 5 × 1019 cm-3) into aluminum-rich (Al,Ga)N thin films. Prototypical light-emitting diode structures incorporating Al0.7Ga0.3N films doped with Mg impurities that ionize to give free hole carrier concentrations of up to 6 × 1017 cm-3 exhibit external quantum efficiencies of up 0.56%; this is an improvement from previous devices made from molecular beam epitaxy-grown materials. This improvement is believed to be due to the high hole carrier concentration enabled by the relatively low activation energy of 220 meV compared to the expected values of 408-507 meV for Al0.7Ga0.3N films.
Piezoelectric MEMS: Ferroelectric thin films for MEMS applications
Kanno, Isaku
2018-04-01
In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.
Optoelectronic properties of doped hydrothermal ZnO thin films
Mughal, Asad J.
2017-03-10
Group III impurity doped ZnO thin films were deposited on MgAl2O3 substrates using a simple low temperature two-step deposition method involving atomic layer deposition and hydrothermal epitaxy. Films with varying concentrations of either Al, Ga, or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates with the addition of precursors salts in the hydrothermal growth solution, In-doped films were shown to saturate at relatively low concentrations. It was found that Ga-doped films showed the best performance in terms of electrical resistivity and optical absorbance when compared to those doped with In or Al, with a resistivity as low as 1.9 mΩ cm and an optical absorption coefficient of 441 cm−1 at 450 nm.
International Nuclear Information System (INIS)
Shen, Xi; Shigematsu, Kei; Chikamatsu, Akira; Fukumura, Tomoteru; Hirose, Yasushi; Hasegawa, Tetsuya
2014-01-01
We report the electrical transport properties of ferrimagnetic Mn 4 N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn 4 N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16 MJ/m 3 , which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125 μΩ cm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.
Rectifying Behavior of Aligned ZnO Nano rods on Mg0.3Zn0.7O Thin Film Template
International Nuclear Information System (INIS)
Salina Muhamad; Suriani Abu Bakar; Mohamad Hafiz Mamat; Rafidah Ahmad; Mohamad Rusop
2011-01-01
Rectifying behavior more than 3 orders of aligned zinc oxide (ZnO) nano rods grown on Mg 0.3 Zn 0.7 O thin film template using chemical bath deposition method was observed, giving a barrier height of 0.75 eV, and the ideality factor achieved was almost 6, which was analyzed using thermionic emission theory. Field emission scanning electron microscope (FESEM) images revealed that the grown ZnO was in hexagonal shape, uniformly distributed and in vertically aligned form. The crystallinity of the sample being studied using X-ray diffraction (XRD), where the highest peak was found at (002) phase, confirming that high crystallinity of ZnO was attained. The effect of metal/semiconductor junction between metal and aligned ZnO nano rods was discussed in further details. (author)
Directory of Open Access Journals (Sweden)
Paphawadee Netsuwan
2014-01-01
Full Text Available The composite thin films of poly(3-aminobenzoic acid (PABA and multiwalled carbon nanotubes (MWNTs are successfully fabricated through an electrochemical method. The composite mixtures containing 50 mM of 3-aminobenzoic acid with various concentrations of MWNTs (1.0, 2.5, 5.0, 7.5, and 10 mg/mL in 0.5 M H2SO4 were prepared and used in this study. Cyclic voltammetry (CV was used for fabrication and monitoring the electropolymerization of the composite thin films with potential range of 0 to 1100 mV for 5 cycles at scan rate of 20 mV/s on indium tin oxide- (ITO-coated glass substrate. UV-vis absorption spectroscopy, atomic force microscopy (AFM, and scanning electron microscopy (SEM techniques were employed to characterize the obtained composite thin films. It was found that MWNTs can enhance the peak current of CV traces of the PABA/MWNTs composite thin films without affecting the UV-vis absorption spectra. The surface morphology of the thin films can be studied using AFM and SEM techniques.
Nanometric thin film membranes manufactured on square meter scale: ultra-thin films for CO 2 capture
Yave, Wilfredo
2010-09-01
Miniaturization and manipulation of materials at nanometer scale are key challenges in nanoscience and nanotechnology. In membrane science and technology, the fabrication of ultra-thin polymer films (defect-free) on square meter scale with uniform thickness (<100 nm) is crucial. By using a tailor-made polymer and by controlling the nanofabrication conditions, we developed and manufactured defect-free ultra-thin film membranes with unmatched carbon dioxide permeances, i.e. >5 m3 (STP) m-2 h -1 bar-1. The permeances are extremely high, because the membranes are made from a CO2 philic polymer material and they are only a few tens of nanometers thin. Thus, these thin film membranes have potential application in the treatment of large gas streams under low pressure like, e.g., carbon dioxide separation from flue gas. © 2010 IOP Publishing Ltd.
Thin film bismuth iron oxides useful for piezoelectric devices
Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy
2016-05-31
The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.
Tools to synthesize the learning of thin films
International Nuclear Information System (INIS)
Rojas, Roberto; Fuster, Gonzalo; Sluesarenko, Viktor
2011-01-01
After a review of textbooks written for undergraduate courses in physics, we have found that discussions on thin films are mostly incomplete. They consider the reflected and not the transmitted light for two instead of the four types of thin films. In this work, we complement the discussion in elementary textbooks, by analysing the phase differences required to match the conditions for constructive and destructive interference, in the reflected and transmitted light in four types of thin films. We consider thin films with varied sequences in the refractive index, which we identify as barriers, wells and stairs (up and down). Also, we use the conservation of energy in order to understand the complementary colour fringes observed in the reflected and transmitted light through thin films. We analyse systematically the phase changes by introducing a phase table and we synthesize the results in a circular diagram matching 16 physical situations of interference and their corresponding conditions on the film thickness. The phase table and the circular diagram are a pair of tools easily assimilated by students, and useful to organize, analyse and activate the knowledge about thin films.
High magnetic field properties of Fe-pnictide thin films
Energy Technology Data Exchange (ETDEWEB)
Kurth, Fritz
2015-11-20
The recent discovery of high-temperature superconductivity in Fe-based materials triggered worldwide efforts to investigate their fundamental properties. Despite a lot of similarities to cuprates and MgB{sub 2}, important differences like near isotropic behaviour in contrast to cuprates and the peculiar pairing symmetry of the order parameter (OP) have been reported. The OP symmetry of Fe-based superconductors (FBS) was theoretically predicted to be of so-called s± state prior to various experimental works. Still, most of the experimental results favour the s± scenario; however, definitive evidence has not yet been reported. Although no clear understanding of the superconducting mechanisms yet exists, potential applications such as high-field magnets and Josephson devices have been explored. Indeed, a lot of reports about FBS tapes, wires, and even SQUIDs have been published to this date. In this thesis, the feasibility of high-field magnet applications of FBS is addressed by studying their transport properties, involving doped BaFe{sub 2}As{sub 2} (Ba-122) and LnFeAs(O,F) [Ln=Sm and Nd]. Particularly, it is important to study physical properties in a sample form (i.e. thin films) that is close to the conditions found in applications. However, the realisation of epitaxial FBS thin films is not an easy undertaking. Recent success in growing epitaxial FBS thin films opens a new avenue to delve into transport critical current measurements. The information obtained through this research will be useful for exploring high-field magnet applications. This thesis consists of 7 chapters: Chapter 1 describes the motivation of this study, the basic background of superconductivity, and a brief summary of the thin film growth of FBS. Chapter 2 describes experimental methods employed in this study. Chapter 3 reports on the fabrication of Co-doped Ba-122 thin films on various substrates. Particular emphasis lies on the discovery of fluoride substrates to be beneficial for
Optical studies of E-beam evaporated MgO films for plasma display panels
Lee, S I; Oh, S G
1999-01-01
Variable-incident-angle spectroscopic ellipsometry has been used for non-destructive depth profiling of MgO thin films, one of the key elements of plasma display panels. We have found that all the examined MgO films have a three-layer structure with a dense interface layer , a void-included middle layer, and a surface layer. We have also found that the void fraction is increased with the oxygen-flow rate at a fixed substrate temperature and decreased with the substrate temperature at a fixed oxygen-flow rate. Moreover, discuss the close correlation between the water adsorption and the void fraction and show a general agreement between the surface layer thickness and the mean height determined by using a atomic force microscopy.
Yao, Kui; Chen, Shuting; Rahimabady, Mojtaba; Mirshekarloo, Meysam Sharifzadeh; Yu, Shuhui; Tay, Francis Eng Hock; Sritharan, Thirumany; Lu, Li
2011-09-01
Although batteries possess high energy storage density, their output power is limited by the slow movement of charge carriers, and thus capacitors are often required to deliver high power output. Dielectric capacitors have high power density with fast discharge rate, but their energy density is typically much lower than electrochemical supercapacitors. Increasing the energy density of dielectric materials is highly desired to extend their applications in many emerging power system applications. In this paper, we review the mechanisms and major characteristics of electric energy storage with electrochemical supercapacitors and dielectric capacitors. Three types of in-house-produced ferroic nonlinear dielectric thin film materials with high energy density are described, including (Pb(0.97)La(0.02))(Zr(0.90)Sn(0.05)Ti(0.05))O(3) (PLZST) antiferroelectric ceramic thin films, Pb(Zn(1/3)Nb(2/3))O(3-)Pb(Mg(1/3)Nb(2/3))O(3-)PbTiO(3) (PZN-PMN-PT) relaxor ferroelectric ceramic thin films, and poly(vinylidene fluoride) (PVDF)-based polymer blend thin films. The results showed that these thin film materials are promising for electric storage with outstandingly high power density and fairly high energy density, comparable with electrochemical supercapacitors.
Molecular simulation of freestanding amorphous nickel thin films
Energy Technology Data Exchange (ETDEWEB)
Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: vvhoang2002@yahoo.com [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)
2013-10-31
Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.
Resistivity of thiol-modified gold thin films
International Nuclear Information System (INIS)
Correa-Puerta, Jonathan; Del Campo, Valeria; Henríquez, Ricardo; Häberle, Patricio
2014-01-01
In this work, we study the effect of thiol self assembled monolayers on the electrical resistivity of metallic thin films. The analysis is based on the Fuchs–Sondheimer–Lucas theory and on electrical transport measurements. We determined resistivity change due to dodecanethiol adsorption on gold thin films. For this purpose, we controlled the deposition and annealing temperatures of the films to change the surface topography and to diminish the effect of electron grain boundary scattering. Results show that the electrical response to the absorption of thiols strongly depends on the initial topography of the surface. - Highlights: • We study the effect of self assembled monolayers on the resistivity of thin films. • Fuchs–Sondheimer theory reproduces the resistivity increase due to thiol deposition. • We determined resistivity change due to dodecanethiol deposition on gold thin films. • The electrical response strongly depends on the substrate surface topography
Resistivity of thiol-modified gold thin films
Energy Technology Data Exchange (ETDEWEB)
Correa-Puerta, Jonathan [Instituto de Física, Pontificia Universidad Católica de Valparaíso, Av. Universidad 330, Curauma, Valparaíso (Chile); Del Campo, Valeria [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile); Henríquez, Ricardo, E-mail: ricardo.henriquez@usm.cl [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile); Häberle, Patricio [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile)
2014-11-03
In this work, we study the effect of thiol self assembled monolayers on the electrical resistivity of metallic thin films. The analysis is based on the Fuchs–Sondheimer–Lucas theory and on electrical transport measurements. We determined resistivity change due to dodecanethiol adsorption on gold thin films. For this purpose, we controlled the deposition and annealing temperatures of the films to change the surface topography and to diminish the effect of electron grain boundary scattering. Results show that the electrical response to the absorption of thiols strongly depends on the initial topography of the surface. - Highlights: • We study the effect of self assembled monolayers on the resistivity of thin films. • Fuchs–Sondheimer theory reproduces the resistivity increase due to thiol deposition. • We determined resistivity change due to dodecanethiol deposition on gold thin films. • The electrical response strongly depends on the substrate surface topography.
Energy Technology Data Exchange (ETDEWEB)
Jeon, Jun-Young; Ha, Tae-Jun, E-mail: taejunha0604@gmail.com
2017-08-15
Highlights: • We demonstrate the potential of solution-processed boron nitride (BN) thin films for nanoelectronics. • Improved interfacial characteristics reduced the leakage current by three orders of magnitude. • The BN encapsulation improves all the device key metrics of low-voltage SWCNT-TFTs. • Such improvements were achieved by reduced interaction of interfacial localized states. - Abstract: In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.
Characterization of nanocrystalline cadmium telluride thin films ...
Indian Academy of Sciences (India)
Unknown
tion method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films ... By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film .... The electrical resistivity of CdTe films was studied in air. Figure 3 shows the variation of log ...
Photoluminescence properties of perovskite multilayer thin films
Energy Technology Data Exchange (ETDEWEB)
Macario, Leilane Roberta; Longo, Elson, E-mail: leilanemacario@gmail.com [Universidade Federal de Sao Carlos (UFSCar), SP (Brazil); Mazzo, Tatiana Martelli [Universidade Federal de Sao Paulo (UNIFESP), SP (Brazil); Bouquet, Valerie; Deputier, Stephanie; Ollivier, Sophie; Guilloux-Viry, Maryline [Universite de Rennes (France)
2016-07-01
Full text: The knowledge of the optical properties of thin films is important in many scientific, technological and industrial applications of thin films such as photoconductivity, solar energy, photography, and numerous other applications [1]. In this study, perovskite type oxides were grown by pulsed laser deposition [2] in order to obtain thin films with applicable optical properties. The LaNiO{sub 3} (LN), BaTiO{sub 3} (BT) and KNbO{sub 3} (KNb) targets were prepared by solid-state reaction. The X-ray Diffraction revealed the presence of the desired phases, containing the elements of interest in the targets and in the thin films that were produced. The LN, BT and KNb thin films were polycrystalline and the corresponding diffraction peaks were indexed in the with JCPDS cards n. 00-033-0711, n. 00-005-0626, and n. 00-009-0156, respectively. The multilayers films were polycrystalline. The majority of the micrographs obtained by scanning electron microscopy presented films with a thickness from 100 to 400 nm. The photoluminescent (PL) emission spectra of thin films show different broad bands that occupies large region of the visible spectrum, ranging from about 300-350 to 600-650 nm of the electromagnetic spectrum. The PL emission is associated with the order-disorder structural, even small structural changes can modify the interactions between electronic states. The structural disorder results in formation of new energy levels in the forbidden region. The proximity or distance of these new energy levels formed in relation to valence band and to the conduction band results in PL spectra located at higher or lower energies. These interactions change the electronic states which can be influenced by defects, particularly the interface defects between the layers of the thin films. The presence of defects results in changes in the broad band matrix intensity and in displacement of the PL emission maximum. (author)
Optical characteristics of the thin-film scintillator detector
International Nuclear Information System (INIS)
Muga, L.; Burnsed, D.
1976-01-01
A study of the thin-film detector (TFD) was made in which various light guide and scintillator film support configurations were tested for efficiency of light coupling. Masking of selected portions of the photomultiplier (PM) tube face revealed the extent to which emitted light was received at the exposed PM surfaces. By blocking off selected areas of the scintillator film surface from direct view of the PM tube faces, a measure of the light-guiding efficiency of the film and its support could be estimated. The picture that emerges is that, as the light which is initially trapped in the thin film spreads radially outward from the ion entrance/exit point, it is scattered out of the film by minute imperfections. Optimum signals were obtained by a configuration in which the thin scintillator film was supported on a thin rectangular Celluloid frame inserted within a highly polished metal cylindrical sleeve
Energy Technology Data Exchange (ETDEWEB)
Tadanaga, Kiyoharu, E-mail: tadanaga@chem.osakafu-u.ac.jp [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Duran, Alicia; Aparacio, Mario [Instituto de Cerámica y Vidrio, Consejo Superior de Investigaciones Científicas, Kelsen 5 (Campus de Cantoblanco), Madrid, 28049 (Spain)
2014-05-01
Highlights: • LiMn{sub 2}O{sub 4} thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn{sub 2}O{sub 4} thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles.
Niobium Nitride Thin Films and Multilayers for Superconducting Radio Frequency Cavities
Roach, William; Beringer, Douglas; Li, Zhaozhu; Clavero, Cesar; Lukaszew, Rosa
2013-03-01
Niobium nitride in thin film form has been considered for a number of applications including multi-layered coatings onto superconducting radio frequency cavities which have been proposed to overcome the fundamental accelerating gradient limit of ~50 MV/m in niobium based accelerators. In order to fulfill the latter application, the selected superconductor's thermodynamic critical field, HC, must be larger than that of niobium and separated from the Nb surface by an insulating layer in order to shield the Nb cavity from field penetration and thus allow higher field gradients. Thus, for the successful implementation of such multilayered stack it is important to consider not just the materials inherent properties but also how these properties may be affected in thin film geometry and also by the specific deposition techniques used. Here, we show the results of our correlated study of structure and superconducting properties in niobium nitride thin films and discuss the shielding exhibited in NbN/MgO/Nb multilayer samples beyond the lower critical field of Nb for the first time. This work was funded by the Defense Threat Reduction Agency (HDTRA-10-1-0072).
Formation and Corrosion Resistance of Mg-Al Hydrotalcite Film on Mg-Gd-Zn Alloy
Ba, Z. X.; Dong, Q. S.; Kong, S. X.; Zhang, X. B.; Xue, Y. J.; Chen, Y. J.
2017-06-01
An environment-friendly technique for depositing a Mg-Al hydrotalcite (HT) (Mg6Al2(OH)16-CO3ṡ4H2O) conversion film was developed to protect the Mg-Gd-Zn alloy from corrosion. The morphology and chemical compositions of the film were analyzed by scanning electronic microscope (SEM) equipped with energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) and Raman spectroscopy (RS), respectively. The electrochemical test and hydrogen evolution test were employed to evaluate the biocorrosion behavior of Mg-Gd-Zn alloy coated with the Mg-Al HT film in the simulated body fluid (SBF). It was found that the formation of Mg-Al HT film was a transition from amorphous precursor to a crystalline HT structure. The HT film can effectively improve the corrosion resistance of magnesium alloy. It indicates that the process provides a promising approach to modify Mg-Gd-Zn alloy.
Fractal and multifractal analysis of LiF thin film surface
International Nuclear Information System (INIS)
Yadav, R.P.; Dwivedi, S.; Mittal, A.K.; Kumar, M.; Pandey, A.C.
2012-01-01
Highlights: ► Fractal and multifractal analysis of surface morphologies of the LiF thin films. ► Complexity and roughness of the LiF thin films increases as thickness increases. ► LiF thin films are multifractal in nature. ► Strength of the multifractality increases with thickness of the film. - Abstract: Fractal and multifractal analysis is performed on the atomic force microscopy (AFM) images of the surface morphologies of the LiF thin films of thickness 10 nm, 20 nm, and 40 nm, respectively. Autocorrelation function, height–height correlation function, and two-dimensional multifractal detrended fluctuation analysis (MFDFA) are used for characterizing the surface. It is found that the interface width, average roughness, lateral correlation length, and fractal dimension of the LiF thin film increase with the thickness of the film, whereas the roughness exponent decreases with thickness. Thus, the complexity and roughness of the LiF thin films increases as thickness increases. It is also demonstrated that the LiF thin films are multifractal in nature. Strength of the multifractality increases with thickness of the film.
Preparation and characterization of vanadium oxide thin films
Energy Technology Data Exchange (ETDEWEB)
Monfort, O.; Plesch, G. [Comenius University of Bratislava, Faculty of Natural Sciences, Department of Inorganic Chemistry, 84215 Bratislava (Slovakia); Roch, T. [Comenius University of Bratislava, Faculty of Mathematics Physics and Informatics, Department of Experimental Physics, 84248 Bratislava (Slovakia)
2013-04-16
The thermotropic VO{sub 2} films have many applications, since they exhibit semiconductor-conductor switching properties at temperature around 70 grad C. Vanadium oxide thin films were prepared via sol-gel method. Spin coater was used to depose these films on Si/SiO{sub 2} and lime glass substrates. Thin films of V{sub 2}O{sub 5} can be reduced to metastable VO{sub 2} thin films at the temperature of 450 grad C under the pressure of 10{sup -2} Pa. These films are then converted to thermotropic VO{sub 2} at 700 grad C in argon under normal pressure. (authors)
Laser nanostructuring of ZnO thin films
Energy Technology Data Exchange (ETDEWEB)
Nedyalkov, N., E-mail: nned@ie.bas.bg [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan); Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Koleva, M.; Nikov, R.; Atanasov, P. [Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Nakajima, Y.; Takami, A.; Shibata, A.; Terakawa, M. [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan)
2016-06-30
Highlights: • Nanosecond laser pulse nanostructuring of ZnO thin films on metal substrate is demonstrated. • Two regimes of the thin film modification are observed depending on the applied laser fluence. • At high fluence regime the ZnO film is homogeneously decomposed into nanosized particles. • The characteristic size of the formed nanostructures corresponds to the domain size of the thin film. - Abstract: In this work, results on laser processing of thin zinc oxide films deposited on metal substrate are presented. ZnO films are obtained by classical nanosecond pulsed laser deposition method in oxygen atmosphere on tantalum substrate. The produced films are then processed by nanosecond laser pulses at wavelength of 355 nm. The laser processing parameters and the film thickness are varied and their influence on the fabricated structures is estimated. The film morphology after the laser treatment is found to depend strongly on the laser fluence as two regimes are defined. It is shown that at certain conditions (high fluence regime) the laser treatment of the film leads to formation of a discrete nanostructure, composed of spherical like nanoparticles with narrow size distribution. The dynamics of the melt film on the substrate and fast cooling are found to be the main mechanisms for fabrication of the observed structures. The demonstrated method is an alternative way for direct fabrication of ZnO nanostructures on metal which can be easy implemented in applications as resistive sensor devices, electroluminescent elements, solar cell technology.
Energy Technology Data Exchange (ETDEWEB)
Shen, Xi; Shigematsu, Kei [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); Chikamatsu, Akira, E-mail: chikamatsu@chem.s.u-tokyo.ac.jp; Fukumura, Tomoteru [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); CREST, Japan Science and Technology Agency (JST), Tokyo 113-0033 (Japan); Hirose, Yasushi; Hasegawa, Tetsuya [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); CREST, Japan Science and Technology Agency (JST), Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)
2014-08-18
We report the electrical transport properties of ferrimagnetic Mn{sub 4}N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn{sub 4}N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16 MJ/m{sup 3}, which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125 μΩ cm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.
Restructuring in block copolymer thin films
DEFF Research Database (Denmark)
Posselt, Dorthe; Zhang, Jianqi; Smilgies, Detlef-M.
2017-01-01
Block copolymer (BCP) thin films have been proposed for a number of nanotechnology applications, such as nanolithography and as nanotemplates, nanoporous membranes and sensors. Solvent vapor annealing (SVA) has emerged as a powerful technique for manipulating and controlling the structure of BCP...... thin films, e.g., by healing defects, by altering the orientation of the microdomains and by changing the morphology. Due to high time resolution and compatibility with SVA environments, grazing-incidence small-angle X-ray scattering (GISAXS) is an indispensable technique for studying the SVA process......, providing information of the BCP thin film structure both laterally and along the film normal. Especially, state-of-the-art combined GISAXS/SVA setups at synchrotron sources have facilitated in situ and real-time studies of the SVA process with a time resolution of a few seconds, giving important insight...
Study of Optical Humidity Sensing Properties of Sol-Gel Processed TiO2 and MgO Films
Directory of Open Access Journals (Sweden)
B. C. Yadav
2007-04-01
Full Text Available Paper reports a comparative study of humidity sensing properties of TiO2 and MgO films fabricated by Sol-gel technique using optical method. One sensing element of the optical humidity sensor presented here consists of rutile structured two-layered TiO2 thin film deposited on the base of an isosceles glass prism. The other sensing element consists of a film of MgO deposited by same technique on base of the prism. Light from He-Ne laser enters prism from one of refracting faces of the prism and gets reflected from the glass-film interface, before emerging out from its other isosceles face. This emergent beam is allowed to pass through an optical fiber. Light coming out from the optical fiber is measured with an optical power meter. Variations in the intensity of light caused by changes in humidity lying in the range 5%RH to 95%RH have been recorded. MgO film shows better sensitivity than TiO2 film.
Nanocoatings and ultra-thin films technologies and applications
Tiginyanu, Ion
2011-01-01
Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...
Raman scattering study of phonons in Bi-based superconductor thin films
International Nuclear Information System (INIS)
Mejia-Garcia, C.; Diaz-Valdes, E.; Contreras-Puente, G.; Lopez-Lopez, J.L.; Jergel, M.; Morales, A.
2004-01-01
Raman spectra were obtained from samples of Bi-Pb-Sr-Ca-Cu-O (BPSCCO) thin films after varying several growth parameters, such as covering material, annealing time (t R ), annealing temperature (T R ), and nominal lead content (x). Thin films with the nominal composition Bi 1.4 Pb x Sr 2 Ca 2 Cu 3 O δ were grown on MgO substrates by a spray pyrolysis technique, followed by a solid state reaction. The results of Raman scattering measurements at room temperature show a series of vibrational optical modes within the range 300-900 cm -1 . The assignment of these modes was made by involving mainly the 2212 and 2223 phases and was confirmed by both X-ray diffraction and resistance in dependence of the temperature (R-T) measurements as well
Nanosphere lithography applied to magnetic thin films
Gleason, Russell
Magnetic nanostructures have widespread applications in many areas of physics and engineering, and nanosphere lithography has recently emerged as promising tool for the fabrication of such nanostructures. The goal of this research is to explore the magnetic properties of a thin film of ferromagnetic material deposited onto a hexagonally close-packed monolayer array of polystyrene nanospheres, and how they differ from the magnetic properties of a typical flat thin film. The first portion of this research focuses on determining the optimum conditions for depositing a monolayer of nanospheres onto chemically pretreated silicon substrates (via drop-coating) and the subsequent characterization of the deposited nanosphere layer with scanning electron microscopy. Single layers of permalloy (Ni80Fe20) are then deposited on top of the nanosphere array via DC magnetron sputtering, resulting in a thin film array of magnetic nanocaps. The coercivities of the thin films are measured using a home-built magneto-optical Kerr effect (MOKE) system in longitudinal arrangement. MOKE measurements show that for a single layer of permalloy (Py), the coercivity of a thin film deposited onto an array of nanospheres increases compared to that of a flat thin film. In addition, the coercivity increases as the nanosphere size decreases for the same deposited layer. It is postulated that magnetic exchange decoupling between neighboring nanocaps suppresses the propagation of magnetic domain walls, and this pinning of the domain walls is thought to be the primary source of the increase in coercivity.
Bandtail characteristics in InN thin films
International Nuclear Information System (INIS)
Shen, W.Z.; Jiang, L.F.; Yang, H.F.; Meng, F.Y.; Ogawa, H.; Guo, Q.X.
2002-01-01
The Urbach bandtail characteristics in InN thin films grown by radio-frequency magnetron sputtering on sapphire (0001) substrates have been investigated both theoretically and experimentally. The bandtail parameter in InN thin films has been obtained by temperature-dependent transmission spectra, with the aid of a detailed calculation of the transmission profile. A bandtail model based on the calculation of density of occupied states and the carrier-phonon interaction has been employed to analyze the temperature-dependent bandtail characteristics. The bandtail parameter is in the range of 90-120 meV in the InN thin film. It is found that the carrier-phonon interaction in InN is weak and the structural disorder contribution (∼90 meV) dominates over the interactive terms. The high structural disorder in InN thin films may relate to the high nonradiative recombination centers
Thin films of mixed metal compounds
Mickelsen, Reid A.; Chen, Wen S.
1985-01-01
A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.
Highly polarized single-c-domain single-crystal Pb(Mn,Nb)O(3)-PZT thin films.
Wasa, Kiyotaka; Adachi, Hideaki; Nishida, Ken; Yamamoto, Takashi; Matsushima, Tomoaki; Kanno, Isaku; Kotera, Hidetoshi
2012-01-01
In-plane unstrained single-c-domain/single-crystal thin films of PZT-based ternary ferroelectric perovskite, ξPb(Mn,Nb)O3-(1 - ξ)PZT, were grown on SrRuO(3)/Pt/MgO substrates using magnetron sputtering followed by quenching. The sputtered unstrained thin films exhibit unique ferroelectric properties: high coercive field, Ec > 180 kV/cm, large remanent polarization, P(r) = 100 μC/cm(2), small relative dielectric constants, ε* = 100 to 150, high Curie temperature, Tc = ~600 °C, and bulk-like large transverse piezoelectric constants, e31,f = -12.0 C/m(2) for PZT(48/52) at ξ = 0.06. The unstrained thin films are an ideal structure to extract the bulk ferroelectric properties. Their micro-structures and ferroelectric properties are discussed in relation to the potential applications for piezoelectric MEMS. © 2012 IEEE
Katti, Romney R.
1995-01-01
Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.
Preparation and properties of antimony thin film anode materials
Institute of Scientific and Technical Information of China (English)
SU Shufa; CAO Gaoshao; ZHAO Xinbing
2004-01-01
Metallic antimony thin films were deposited by magnetron sputtering and electrodeposition. Electrochemical properties of the thin film as anode materials for lithium-ion batteries were investigated and compared with those of antimony powder. It was found that both magnetron sputtering and electrodeposition are easily controllable processes to deposit antimony films with fiat charge/discharge potential plateaus. The electrochemical performances of antimony thin films, especially those prepared with magnetron sputtering, are better than those of antimony powder. The reversible capacities of the magnetron sputtered antimony thin film are above 400 mA h g-1 in the first 15 cycles.
Magnetic damping phenomena in ferromagnetic thin-films and multilayers
Azzawi, S.; Hindmarch, A. T.; Atkinson, D.
2017-11-01
Damped ferromagnetic precession is an important mechanism underpinning the magnetisation processes in ferromagnetic materials. In thin-film ferromagnets and ferromagnetic/non-magnetic multilayers, the role of precession and damping can be critical for spintronic device functionality and as a consequence there has been significant research activity. This paper presents a review of damping in ferromagnetic thin-films and multilayers and collates the results of many experimental studies to present a coherent synthesis of the field. The terms that are used to define damping are discussed with the aim of providing consistent definitions for damping phenomena. A description of the theoretical basis of damping is presented from early developments to the latest discussions of damping in ferromagnetic thin-films and multilayers. An overview of the time and frequency domain methods used to study precessional magnetisation behaviour and damping in thin-films and multilayers is also presented. Finally, a review of the experimental observations of magnetic damping in ferromagnetic thin-films and multilayers is presented with the most recent explanations. This brings together the results from many studies and includes the effects of ferromagnetic film thickness, the effects of composition on damping in thin-film ferromagnetic alloys, the influence of non-magnetic dopants in ferromagnetic films and the effects of combining thin-film ferromagnets with various non-magnetic layers in multilayered configurations.
Chemical vapour deposition of thin-film dielectrics
International Nuclear Information System (INIS)
Vasilev, Vladislav Yu; Repinsky, Sergei M
2005-01-01
Data on the chemical vapour deposition of thin-film dielectrics based on silicon nitride, silicon oxynitride and silicon dioxide and on phosphorus- and boron-containing silicate glasses are generalised. The equipment and layer deposition procedures are described. Attention is focussed on the analysis and discussion of the deposition kinetics and on the kinetic models for film growth. The film growth processes are characterised and data on the key physicochemical properties of thin-film covalent dielectric materials are given.
Residual stress in spin-cast polyurethane thin films
Energy Technology Data Exchange (ETDEWEB)
Zhang, Hong; Zhang, Li, E-mail: lizhang@mae.cuhk.edu.hk [Department of Mechanical and Automation Engineering, The Chinese University of Hong Kong, Shatin N.T., Hong Kong (China); Chow Yuk Ho Technology Centre for Innovative Medicine, The Chinese University of Hong Kong, Shatin N.T., Hong Kong (China)
2015-01-19
Residual stress is inevitable during spin-casting. Herein, we report a straightforward method to evaluate the residual stress in as-cast polyurethane thin films using area shrinkage measurement of films in floating state, which shows that the residual stress is independent of radial location on the substrate and decreased with decreasing film thickness below a critical value. We demonstrate that the residual stress is developed due to the solvent evaporation after vitrification during spin-casting and the polymer chains in thin films may undergo vitrification at an increased concentration. The buildup of residual stress in spin-cast polymer films provides an insight into the size effects on the nature of polymer thin films.
Preparation and evaluation of Mn3GaN1-x thin films with controlled N compositions
Ishino, Sunao; So, Jongmin; Goto, Hirotaka; Hajiri, Tetsuya; Asano, Hidefumi
2018-05-01
Thin films of antiperovskite Mn3GaN1-x were grown on MgO (001) substrates by reactive magnetron sputtering, and their structural, magnetic, and magneto-optical properties were systematically investigated. It was found that the combination of the deposition rate and the N2 gas partial pressure could produce epitaxial films with a wide range of N composition (N-deficiency) and resulting c/a values (0.93 - 1.0). While the films with c/a = 0.992 - 1.0 were antiferromagnetic, the films with c/a = 0.93 - 0.989 showed perpendicular magnetic anisotropy (PMA) with the maximum PMA energy up to 1.5×106 erg/cm3. Systematic dependences of the energy spectra of the polar Kerr signals on the c/a ratio were observed, and the Kerr ellipticity was as large as 2.4 deg. at 1.9 eV for perpendicularly magnetized ferromagnetic thin films with c/a = 0.975. These results highlight that the tetragonal distortion plays an important role in magnetic and magneto-optical properties of Mn3GaN1-x thin films.
Electric-field-induced monoclinic phase in (Ba,Sr)TiO3 thin film
International Nuclear Information System (INIS)
Anokhin, A. S.; Yuzyuk, Yu. I.; Golovko, Yu. I.; Mukhortov, V. M.; El Marssi, M.
2011-01-01
We have studied electric-field-induced symmetry lowering in the tetragonal (001)-oriented heteroepitaxial (Ba 0.8 Sr 0.2 )TiO 3 thin film deposited on (001)MgO substrate. Polarized micro-Raman spectra were recorded from the film area in between two planar electrodes deposited on the film surface. Presence of c domains with polarization normal to the substrate was confirmed from polarized Raman study under zero field, while splitting and hardening of the E(TO) soft mode and polarization changes in the Raman spectra suggest monoclinic symmetry under external electric field.
Simulated Thin-Film Growth and Imaging
Schillaci, Michael
2001-06-01
Thin-films have become the cornerstone of the electronics, telecommunications, and broadband markets. A list of potential products includes: computer boards and chips, satellites, cell phones, fuel cells, superconductors, flat panel displays, optical waveguides, building and automotive windows, food and beverage plastic containers, metal foils, pipe plating, vision ware, manufacturing equipment and turbine engines. For all of these reasons a basic understanding of the physical processes involved in both growing and imaging thin-films can provide a wonderful research project for advanced undergraduate and first-year graduate students. After producing rudimentary two- and three-dimensional thin-film models incorporating ballsitic deposition and nearest neighbor Coulomb-type interactions, the QM tunneling equations are used to produce simulated scanning tunneling microscope (SSTM) images of the films. A discussion of computational platforms, languages, and software packages that may be used to accomplish similar results is also given.
Nanostructured thin films as functional coatings
Energy Technology Data Exchange (ETDEWEB)
Lazar, Manoj A; Tadvani, Jalil K; Tung, Wing Sze; Lopez, Lorena; Daoud, Walid A, E-mail: Walid.Daoud@sci.monash.edu.au [School of Applied Sciences and Engineering, Monash University, Churchill, VIC 3842 (Australia)
2010-06-15
Nanostructured thin films is one of the highly exploiting research areas particularly in applications such as photovoltaics, photocatalysis and sensor technologies. Highly tuned thin films, in terms of thickness, crystallinity, porosity and optical properties, can be fabricated on different substrates using the sol-gel method, chemical solution deposition (CSD), electrochemical etching, along with other conventional methods such as chemical vapour deposition (CVD) and physical vapour deposition (PVD). The above mentioned properties of these films are usually characterised using surface analysis techniques such as XRD, SEM, TEM, AFM, ellipsometry, electrochemistry, SAXS, reflectance spectroscopy, STM, XPS, SIMS, ESCA, X-ray topography and DOSY-NMR. This article presents a short review of the preparation and characterisation of thin films of nanocrystalline titanium dioxide and modified silicon as well as their application in solar cells, water treatment, water splitting, self cleaning fabrics, sensors, optoelectronic devices and lab on chip systems.
Thin film characterization by resonantly excited internal standing waves
Energy Technology Data Exchange (ETDEWEB)
Di Fonzio, S [SINCROTRONE TRIESTE, Trieste (Italy)
1996-09-01
This contribution describes how a standing wave excited in a thin film can be used for the characterization of the properties of the film. By means of grazing incidence X-ray reflectometry one can deduce the total film thickness. On the other hand in making use of a strong resonance effect in the electric field intensity distribution inside a thin film on a bulk substrate one can learn more about the internal structure of the film. The profile of the internal standing wave is proven by diffraction experiments. The most appropriate non-destructive technique for the subsequent thin film characterization is angularly dependent X-ray fluorescence analysis. The existence of the resonance makes it a powerful tool for the detection of impurities and of ultra-thin maker layers, for which the position can be determined with very high precision (about 1% of the total film thickness). This latter aspect will be discussed here on samples which had a thin Ti marker layer at different positions in a carbon film. Due to the resonance enhancement it was still possible to perform these experiments with a standard laboratory x-ray tube and with standard laboratory tool for marker or impurity detection in thin films.
Thin film ceramic thermocouples
Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)
2011-01-01
A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.
Kinetics and Mechanisms of Oxygen Surface Exchange on La0.6Sr0.4FeO3-delta Thin Films
Mosleh, Majid; Søgaard, Martin; Hendriksen, Peter Vang
2009-01-01
The thermodynamic properties as well as oxygen exchange kinetics were examined on mixed ionic and electronic conducting (La0.6Sr0.4)0.99FeO3− (LSF64) thin films deposited on MgO single crystals. It is found that thin films and bulk material have the same oxygen stoichiometry for a given temperature and oxygen partial pressure [i.e., the incorporation reaction has the same reaction enthalpy (H0=−105 KJ/mol) and entropy (S0=−75.5 J/mol/K) as found for bulk material]. The thin film shows smaller...
Photoluminescence of electron beam evaporated CaS:Bi thin films
Smet, P F; Poelman, D R; Meirhaeghe, R L V
2003-01-01
For the first time, the photoluminescence (PL) of electron beam evaporated CaS:Bi thin films is reported. Luminescent CaS:Bi powder prepared out of aqueous solutions was used as source material. The influence of substrate temperature on the PL and the morphology of thin films is discussed, and an optimum is determined. Substrate temperatures between 200 deg. C and 300 deg. C lead to good quality thin films with sufficient PL intensity. As-deposited thin films show two emission bands, peaking at 450 and 530 nm. Upon annealing the emission intensity increases, and annealing at 800 deg. C is sufficient to obtain a homogeneously blue emitting thin film (CIE colour coordinates (0.17; 0.12)), thanks to a single remaining emission band at 450 nm. The influence of ambient temperature on the PL of CaS:Bi powder and thin films was also investigated and it was found that CaS:Bi thin films show a favourable thermal quenching behaviour near room temperature.
Excimer Laser Deposition of PLZT Thin Films
National Research Council Canada - National Science Library
Petersen, GAry
1991-01-01
.... In order to integrate these devices into optical systems, the production of high quality thin films with high transparency and perovskite crystal structure is desired. This requires development of deposition technologies to overcome the challenges of depositing and processing PLZT thin films.
Energy Technology Data Exchange (ETDEWEB)
Loong, Li Ming; Deorani, Praveen; Qiu, Xuepeng; Yang, Hyunsoo, E-mail: eleyang@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)
2015-07-13
Current-induced spin-orbit torques (SOTs) have the potential to revolutionize magnetization switching technology. Here, we investigate SOT in a heavy metal (HM)/Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} (CFAS)/MgO thin film structure with perpendicular magnetic anisotropy (PMA), where the HM is either Pt or Ta. Our results suggest that both the spin Hall effect and the Rashba effect contribute significantly to the effective fields in the Pt underlayer samples. Moreover, after taking the PMA energies into account, current-induced SOT-based switching studies of both the Pt and Ta underlayer samples suggest that the two HM underlayers yield comparable switching efficiency in the HM/CFAS/MgO material system.
Fluorination of an epitaxial YBaCuO thin film with controlled oxygen vacancies
Energy Technology Data Exchange (ETDEWEB)
Perrin, C. (Lab. de Chimie du Solide et Inorganique Moleculaire, Univ. de Rennes 1, 35 (France)); Pena, O. (Lab. de Chimie du Solide et Inorganique Moleculaire, Univ. de Rennes 1, 35 (France)); Mokhtari, M. (Lab. de Chimie du Solide et Inorganique Moleculaire, Univ. de Rennes 1, 35 (France)); Thivet, C. (Lab. de Chimie du Solide et Inorganique Moleculaire, Univ. de Rennes 1, 35 (France)); Guilloux-Viry, M. (Lab. de Chimie du Solide et Inorganique Moleculaire, Univ. de Rennes 1, 35 (France)); Perrin, A. (Lab. de Chimie du Solide et Inorganique Moleculaire, Univ. de Rennes 1, 35 (France)); Sergent, M. (Lab. de Chimie du Solide et Inorganique Moleculaire, Univ. de Rennes 1, 35 (France))
1993-05-10
An intentionally oxygen-deficient thin film, epitaxially grown in-situ on a (100) MgO substrate by laser ablation at 750 C under a low pressure oxygen atmosphere, has been treated under NF[sub 3] diluted in N[sub 2] at temperatures not exceeding 280 C. During the fluorination process the epitaxy of the thin film is maintained; its Tc onset progressively increases from 54 K up to 85.6 K and the width of the inductive transition is narrow at the end of treatment (1.2 K). These results are discussed and compared to those obtained during the fluorination of oxygen-deficient YBa[sub 2]Cu[sub 3]O[sub x] ceramics. (orig.)
Physics of thin films advances in research and development
Hass, Georg; Vossen, John L
2013-01-01
Physics of Thin Films: Advances in Research and Development, Volume 12 reviews advances that have been made in research and development concerning the physics of thin films. This volume covers a wide range of preparative approaches, physics phenomena, and applications related to thin films. This book is comprised of four chapters and begins with a discussion on metal coatings and protective layers for front surface mirrors used at various angles of incidence from the ultraviolet to the far infrared. Thin-film materials and deposition conditions suitable for minimizing reflectance changes with
Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films
Energy Technology Data Exchange (ETDEWEB)
Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie
1997-11-21
The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.
Field ion microscope studies on thin films
International Nuclear Information System (INIS)
Cavaleru, A.; Scortaru, A.
1976-01-01
A review of the progress made in the last years in FIM application to thin film structure studies and adatom properties important in the nucleation stage of thin film growth: substrate binding and mobility of individual adatoms, behaviour of adatoms clusters is presented. (author)
Ion assistance effects on electron beam deposited MgF sub 2 films
Alvisi, M; Della Patria, A; Di Giulio, M; Masetti, E; Perrone, M R; Protopapa, M L; Tepore, A
2002-01-01
Thin films of MgF sub 2 have been deposited by the ion-assisted electron-beam evaporation technique in order to find out the ion beam parameters leading to films of high laser damage threshold whose optical properties are stable under uncontrolled atmosphere conditions. It has been found that the ion-assisted electron-beam evaporation technique allows getting films with optical properties (refraction index and extinction coefficient) of high environmental stability by properly choosing the ion-source voltage and current. But, the laser damage fluence at 308 nm was quite dependent on the assisting ion beam parameters. Larger laser damage fluences have been found for the films deposited by using assisting ion beams delivered at lower anode voltage and current values. It has also been found that the films deposited without ion assistance were characterized by the highest laser damage fluence (5.9 J/cm sup 2) and the lowest environmental stability. The scanning electron microscopy analysis of the irradiated areas...
Layered double hydroxides/polymer thin films grown by matrix assisted pulsed laser evaporation
Energy Technology Data Exchange (ETDEWEB)
Birjega, R.; Matei, A.; Mitu, B.; Ionita, M.D.; Filipescu, M.; Stokker-Cheregi, F.; Luculescu, C.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest–Magurele (Romania); Zavoianu, R.; Pavel, O.D. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania); Corobea, M.C. [National R. and S. Institute for Chemistry and Petrochemistry, ICECHIM, 202 Splaiul Independentei Str., CP-35-274, 060021, Bucharest (Romania)
2013-09-30
Due to their highly tunable properties, layered double hydroxides (LDHs) are an emerging class of the favorably layered crystals used for the preparation of multifunctional polymer/layered crystal nanocomposites. In contrast to cationic clay materials with negatively charge layers, LDHs are the only host lattices with positively charged layers (brucite-like), with interlayer exchangeable anions and intercalated water. In this work, the deposition of thin films of Mg and Al based LDH/polymers nanocomposites by laser techniques is reported. Matrix assisted pulsed laser evaporation was the method used for thin films deposition. The Mg–Al LDHs capability to act as a host for polymers and to produce hybrid LDH/polymer films has been investigated. Polyethylene glycol with different molecular mass compositions and ethylene glycol were used as polymers. The structure and surface morphology of the deposited LDH/polymers films were examined by X-ray diffraction, Fourier transform infra-red spectroscopy, atomic force microscopy and scanning electron microscopy. - Highlights: • Hybrid composites deposited by matrix assisted pulsed laser evaporation (MAPLE). • Mg–Al layered double hydroxides (LDH) and polyethylene glycol (PEG) are used. • Mixtures of PEG1450 and LDH were deposited by MAPLE. • Deposited thin films preserve the properties of the starting material. • The film wettability can be controlled by the amount of PEG.
Huebner, Torsten; Martens, Ulrike; Walowski, Jakob; Münzenberg, Markus; Thomas, Andy; Reiss, Günter; Kuschel, Timo
2018-06-01
In general, it is difficult to access the thermal conductivity of thin insulating films experimentally by electrical means. Here, we present a new approach utilizing the tunnel magneto-Seebeck effect (TMS) in combination with finite-element modeling (FEM). We detect the laser-induced TMS and the absolute thermovoltage of laser-heated magnetic tunnel junctions with 2.6 nm thin barriers of MgAl2O4 (MAO) and MgO, respectively. A second measurement of the absolute thermovoltage after a dielectric breakdown of the barrier grants insight into the remaining thermovoltage of the stack. Thus, the pure TMS without any parasitic Nernst contributions from the leads can be identified. In combination with FEM via COMSOL, we are able to extract values for the thermal conductivity of MAO (0.7 W (K · m)‑1) and MgO (5.8 W (K · m)‑1), which are in very good agreement with theoretical predictions. Our method provides a new promising way to extract the experimentally challenging parameter of the thermal conductivity of thin insulating films.
The Structure and Stability of Molybdenum Ditelluride Thin Films
Directory of Open Access Journals (Sweden)
Zhouling Wang
2014-01-01
Full Text Available Molybdenum-tellurium alloy thin films were fabricated by electron beam evaporation and the films were annealed in different conditions in N2 ambient. The hexagonal molybdenum ditelluride thin films with well crystallization annealed at 470°C or higher were obtained by solid state reactions. Thermal stability measurements indicate the formation of MoTe2 took place at about 350°C, and a subtle weight-loss was in the range between 30°C and 500°C. The evolution of the chemistry for Mo-Te thin films was performed to investigate the growth of the MoTe2 thin films free of any secondary phase. And the effect of other postdeposition treatments on the film characteristics was also investigated.
Magnetic surfaces, thin films, and multilayers
International Nuclear Information System (INIS)
Parkin, S.S.P.; Renard, J.P.; Shinjo, T.; Zinn, W.
1992-01-01
This paper details recent developments in the magnetism of surfaces, thin films and multilayers. More than 20 invited contributions and more than 60 contributed papers attest to the great interest and vitality of this subject. In recent years the study of magnetic surfaces, thin films and multilayers has undergone a renaissance, partly motivated by the development of new growth and characterization techniques, but perhaps more so by the discovery of many exciting new properties, some quite unanticipated. These include, most recently, the discovery of enormous values of magnetoresistance in magnetic multilayers far exceeding those found in magnetic single layer films and the discovery of oscillatory interlayer coupling in transition metal multilayers. These experimental studies have motivated much theoretical work. However these developments are to a large extent powered by materials engineering and our ability to control and understand the growth of thin layers just a few atoms thick. The preparation of single crystal thin film layers and multilayers remains important for many studies, in particular, for properties dependent. These studies obviously require engineering not just a layer thicknesses but of lateral dimensions as well. The properties of such structures are already proving to be a great interest
Thin films prepared from tungstate glass matrix
Energy Technology Data Exchange (ETDEWEB)
Montanari, B.; Ribeiro, S.J.L.; Messaddeq, Y. [Departamento de Quimica Geral e Inorganica, Instituto de Quimica, Sao Paulo State University-UNESP, CP 355, CEP 14800-900, Araraquara, SP (Brazil); Li, M.S. [Instituto de Fisica, USP, CP 369, CEP 13560-970, Sao Carlos, SP (Brazil); Poirier, G. [Departamento de Ciencias Exatas, UNIFAL-MG, CEP 37130-000, Alfenas-MG (Brazil)], E-mail: gael@unifal-mg.edu.br
2008-01-30
Vitreous samples containing high concentrations of WO{sub 3} (above 40% M) have been used as a target to prepare thin films. Such films were deposited using the electron beam evaporation method onto soda-lime glass substrates. These films were characterized by X-ray diffraction (XRD), perfilometry, X-ray energy dispersion spectroscopy (EDS), M-Lines and UV-vis absorption spectroscopy. In this work, experimental parameters were established to obtain stable thin films showing a chemical composition close to the glass precursor composition and with a high concentration of WO{sub 3}. These amorphous thin films of about 4 {mu}m in thickness exhibit a deep blue coloration but they can be bleached by thermal treatment near the glass transition temperature. Such bleached films show several guided modes in the visible region and have a high refractive index. Controlled crystallization was realized and thus it was possible to obtain WO{sub 3} microcrystals in the amorphous phase.
Characterization of Sucrose Thin Films for Biomedical Applications
Directory of Open Access Journals (Sweden)
S. L. Iconaru
2011-01-01
Full Text Available Sucrose is a natural osmolyte accumulated in the cells of organisms as they adapt to environmental stress. In vitro sucrose increases protein stability and forces partially unfolded structures to refold. Thin films of sucrose (C12H22O11 were deposited on thin cut glass substrates by the thermal evaporation technique (P∼10−5 torr. Characteristics of thin films were put into evidence by Fourier Transform Infrared Spectroscopy (FTIR, X-ray Photoelectron Spectroscopy (XPS, scanning electron microscopy (SEM, and differential thermal analysis and thermal gravimetric analysis (TG/DTA. The experimental results confirm a uniform deposition of an adherent layer. In this paper we present a part of the characteristics of sucrose thin films deposited on glass in medium vacuum conditions, as a part of a culture medium for osteoblast cells. Osteoblast cells were used to determine proliferation, viability, and cytotoxicity interactions with sucrose powder and sucrose thin films. The osteoblast cells have been provided from the American Type Culture Collection (ATCC Centre. The outcome of this study demonstrated the effectiveness of sucrose thin films as a possible nontoxic agent for biomedical applications.
Significant questions in thin liquid film heat transfer
International Nuclear Information System (INIS)
Bankoff, S.G.
1994-01-01
Thin liquid films appear in many contexts, such as the cooling of gas turbine blade tips, rocket engines, microelectronics arrays, and hot fuel element surfaces in hypothetical nuclear reactor accidents. Apart from these direct cooling applications of thin liquid layers, thin films form a crucial element in determining the allowable heat flux limits in boiling. This is because the last stages of dryout almost invariably involve the rupture of a residual liquid film, either as a microlayer underneath the bubbles, or a thin annular layer in a high-quality burnout scenario. The destabilization of these thin films under the combined actions of shear stress, evaporation, and thermocapillary effects is quite complex. The later stages of actual rupture to form dry regions, which then expand, resulting in possible overheating, are even more complex and less well understood. However, significant progress has been made in understanding the behavior of these thin films, which are subject to competing instabilities prior to actual rupture. This will be reviewed briefly. Recent work on the advance, or recession, of contact lines will also be described briefly, and significant questions that still remain to be answered will be discussed. 68 refs., 7 figs
Novel photon management for thin-film photovoltaics
Energy Technology Data Exchange (ETDEWEB)
Menon, Rajesh [Univ. of Utah, Salt Lake City, UT (United States)
2016-11-11
The objective of this project is to enable commercially viable thin-film photovoltaics whose efficiencies are increased by over 10% using a novel optical spectral-separation technique. A thin planar diffractive optic is proposed that efficiently separates the solar spectrum and assigns these bands to optimal thin-film sub-cells. An integrated device that is comprised of the optical element, an array of sub-cells and associated packaging is proposed.
Thin films as an emerging platform for drug delivery
Directory of Open Access Journals (Sweden)
Sandeep Karki
2016-10-01
Full Text Available Pharmaceutical scientists throughout the world are trying to explore thin films as a novel drug delivery tool. Thin films have been identified as an alternative approach to conventional dosage forms. The thin films are considered to be convenient to swallow, self-administrable, and fast dissolving dosage form, all of which make it as a versatile platform for drug delivery. This delivery system has been used for both systemic and local action via several routes such as oral, buccal, sublingual, ocular, and transdermal routes. The design of efficient thin films requires a comprehensive knowledge of the pharmacological and pharmaceutical properties of drugs and polymers along with an appropriate selection of manufacturing processes. Therefore, the aim of this review is to provide an overview of the critical factors affecting the formulation of thin films, including the physico-chemical properties of polymers and drugs, anatomical and physiological constraints, as well as the characterization methods and quality specifications to circumvent the difficulties associated with formulation design. It also highlights the recent trends and perspectives to develop thin film products by various companies.
Investigations of Si Thin Films as Anode of Lithium-Ion Batteries
Energy Technology Data Exchange (ETDEWEB)
Wu, Qingliu [Department of Chemical; Shi, Bing; Bareño, Javier; Liu, Yuzi; Maroni, Victor A.; Zhai, Dengyun; Dees, Dennis W.; Lu, Wenquan
2018-01-22
Amorphous silicon thin films having various thicknesses were investigated as a negative electrode material for lithium-ion batteries. Electrochemical characterization of the 20 nm thick thin silicon film revealed a very low first cycle Coulombic efficiency, which can be attributed to the silicon oxide layer formed on both the surface of the as-deposited Si thin film and the interface between the Si and the substrate. Among the investigated films, the 100 nm Si thin film demonstrated the best performance in terms of first cycle efficiency and cycle life. Observations from scanning electron microscopy demonstrated that the generation of cracks was inevitable in the cycled Si thin films, even as the thickness of the film was as little as 20 nm, which was not predicted by previous modeling work. However, the cycling performance of the 20 and 100 nm silicon thin films was not detrimentally affected by these cracks. The poor capacity retention of the 1 mu m silicon thin film was attributed to the delamination.
Removable Thin Films used for the Abatement and Mitigation of Beryllium
International Nuclear Information System (INIS)
Lumia, M.; Gentile, C.; Creek, K.; Sandoval, R.
2003-01-01
The use of removable thin films for the abatement of hazardous particulates has many advantages. Removable thin films are designed to trap and fix particulates in the film's matrix by adhesion. Thin films can be applied to an existing contaminated area to fix and capture the particulates for removal. The nature of the removable thin films, after sufficient cure time, is such that it can typically be removed as one continuous entity. The removable thin films can be applied to almost any surface type with a high success rate of removal
Thermochemical hydrogen generation of indium oxide thin films
Directory of Open Access Journals (Sweden)
Taekyung Lim
2017-03-01
Full Text Available Development of alternative energy resources is an urgent requirement to alleviate current energy constraints. As such, hydrogen gas is gaining attention as a future alternative energy source to address existing issues related to limited energy resources and air pollution. In this study, hydrogen generation by a thermochemical water-splitting process using two types of In2O3 thin films was investigated. The two In2O3 thin films prepared by chemical vapor deposition (CVD and sputtering deposition systems contained different numbers of oxygen vacancies, which were directly related to hydrogen generation. The as-grown In2O3 thin film prepared by CVD generated a large amount of hydrogen because of its abundant oxygen vacancies, while that prepared by sputtering had few oxygen vacancies, resulting in low hydrogen generation. Increasing the temperature of the In2O3 thin film in the reaction chamber caused an increase in hydrogen generation. The oxygen-vacancy-rich In2O3 thin film is expected to provide a highly effective production of hydrogen as a sustainable and efficient energy source.
Thin Film Photovoltaic/Thermal Solar Panels
Institute of Scientific and Technical Information of China (English)
David JOHNSTON
2008-01-01
A solar panel is described.in which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector,absorber tandem, which acts as a solar selective surface,thus enhancing the solar thermal performance of the collector plate.The use of thin films reduces the distance heat is required to flow from the absorbing surface to the metal plate and heat exchange conduits.Computer modelling demonstrated that,by suitable choice of materials,photovohaic efficiency call be maintained,with thermal performance slishtly reduced,compared to that for thermal-only panels.By grading the absorber layer-to reduce the band gap in the lower region-the thermal performance can be improved,approaching that for a thermal-only solar panel.
Phonon transport across nano-scale curved thin films
Energy Technology Data Exchange (ETDEWEB)
Mansoor, Saad B.; Yilbas, Bekir S., E-mail: bsyilbas@kfupm.edu.sa
2016-12-15
Phonon transport across the curve thin silicon film due to temperature disturbance at film edges is examined. The equation for radiative transport is considered via incorporating Boltzmann transport equation for the energy transfer. The effect of the thin film curvature on phonon transport characteristics is assessed. In the analysis, the film arc length along the film centerline is considered to be constant and the film arc angle is varied to obtain various film curvatures. Equivalent equilibrium temperature is introduced to assess the phonon intensity distribution inside the curved thin film. It is found that equivalent equilibrium temperature decay along the arc length is sharper than that of in the radial direction, which is more pronounced in the region close to the film inner radius. Reducing film arc angle increases the film curvature; in which case, phonon intensity decay becomes sharp in the close region of the high temperature edge. Equivalent equilibrium temperature demonstrates non-symmetric distribution along the radial direction, which is more pronounced in the near region of the high temperature edge.
Phonon transport across nano-scale curved thin films
International Nuclear Information System (INIS)
Mansoor, Saad B.; Yilbas, Bekir S.
2016-01-01
Phonon transport across the curve thin silicon film due to temperature disturbance at film edges is examined. The equation for radiative transport is considered via incorporating Boltzmann transport equation for the energy transfer. The effect of the thin film curvature on phonon transport characteristics is assessed. In the analysis, the film arc length along the film centerline is considered to be constant and the film arc angle is varied to obtain various film curvatures. Equivalent equilibrium temperature is introduced to assess the phonon intensity distribution inside the curved thin film. It is found that equivalent equilibrium temperature decay along the arc length is sharper than that of in the radial direction, which is more pronounced in the region close to the film inner radius. Reducing film arc angle increases the film curvature; in which case, phonon intensity decay becomes sharp in the close region of the high temperature edge. Equivalent equilibrium temperature demonstrates non-symmetric distribution along the radial direction, which is more pronounced in the near region of the high temperature edge.
Emergent Topological Phenomena in Thin Films of Pyrochlore Iridates
Yang, Bohm-Jung; Nagaosa, Naoto
2014-06-01
Because of the recent development of thin film and artificial superstructure growth techniques, it is possible to control the dimensionality of the system, smoothly between two and three dimensions. In this Letter we unveil the dimensional crossover of emergent topological phenomena in correlated topological materials. In particular, by focusing on the thin film of pyrochlore iridate antiferromagnets grown along the [111] direction, we demonstrate that the thin film can have a giant anomalous Hall conductance, proportional to the thickness of the film, even though there is no Hall effect in 3D bulk material. Moreover, in the case of ultrathin films, a quantized anomalous Hall conductance can be observed, despite the fact that the system is an antiferromagnet. In addition, we uncover the emergence of a new topological phase, the nontrivial topological properties of which are hidden in the bulk insulator and manifest only in thin films. This shows that the thin film of correlated topological materials is a new platform to search for unexplored novel topological phenomena.
Energy Technology Data Exchange (ETDEWEB)
Zheng Liang [School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054 (China); Zhu Jun [School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054 (China)]. E-mail: junzhu@uestc.edu.cn; Zhang Ying [School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054 (China); Jiang Shuwen [School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054 (China); Li Yanrong [School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054 (China); Huawei Xian [School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054 (China); Li Jinlong [School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054 (China)
2006-03-15
A series of metallic LaNiO{sub 3} (LNO) thin films were deposited on MgO (1 0 0) substrates by pulsed laser deposition (PLD) under the oxygen pressure of 20 Pa at different substrate temperatures from 450 to 750 deg. C. X-ray diffraction (XRD) was used to characterize the crystal structure of LNO films. {theta}-2{theta} scans of XRD indicate that LNO film deposited at a substrate temperature of 700 deg. C has a high orientation of (l l 0). At other substrate temperatures, the LNO films have mixed phases of (l l 0) and (l 0 0). Furthermore, pole figure measurements show that LNO thin films, with the bicrystalline structure, were epitaxially deposited on MgO (1 0 0) substrates in the mode of LNO (1 1 0)//MgO (1 0 0) at 700 deg. C. Reflection high-energy electric diffraction (RHEED) and atomic force microscopy (AFM) were also performed to investigate the microstructure of LNO films with the high (l l 0) orientation. RHEED patterns clearly confirm this epitaxial relationship. An atomically smooth surface of LNO films at 700 deg. C was obtained. In addition, bicrystalline epitaxial LNO films, fabricated at 700 deg. C, present a excellent conductivity with a lower electrical resistivity of 300 {mu} {omega} cm. Thus, the obtained results indicate that bicystalline epitaxial LNO films could serve as a promising candidate of electrode materials for the fabrication of ferroelectric or dielectric films.
Thermoelectric effects of amorphous Ga-Sn-O thin film
Matsuda, Tokiyoshi; Uenuma, Mutsunori; Kimura, Mutsumi
2017-07-01
The thermoelectric effects of an amorphous Ga-Sn-O (a-GTO) thin film have been evaluated as a physical parameter of a novel oxide semiconductor. Currently, a-GTO thin films are greatly desired not only because they do not contain rare metals and are therefore free from problems on the exhaustion of resources and the increase in cost but also because their initial characteristics and performance stabilities are excellent when they are used in thin-film transistors. In this study, an a-GTO thin film was deposited on a quartz substrate by RF magnetron sputtering and postannealing was performed in air at 350 °C for 1 h using an annealing furnace. The Seebeck coefficient and electrical conductivity of the a-GTO thin film were -137 µV/K and 31.8 S/cm at room temperature, and -183 µV/K and 43.8 S/cm at 397 K, respectively, and as a result, the power factor was 1.47 µW/(cm·K2) at 397 K; these values were roughly as high as those of amorphous In-Ga-Zn-O (a-IGZO) thin films. Therefore, a-GTO thin films will be a candidate material for thermoelectric devices fabricated in a large area at a low cost by controlling the carrier mobility, carrier density, device structures, and so forth.
Beryllium thin films for resistor applications
Fiet, O.
1972-01-01
Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.
XRay Study of Transfer Printed Pentacene Thin Films
International Nuclear Information System (INIS)
Shao, Y.; Solin, S. A.; Hines, D. R.; Williams, E. D.
2007-01-01
We investigated the structural properties and transfer properties of pentacene thin films fabricated by thermal deposition and transfer printing onto SiO2 and plastic substrates, respectively. The dependence of the crystallite size on the printing time, temperature and pressure were measured. The increases of crystalline size were observed when pentacene thin films were printed under specific conditions, e.g. 120 deg. C and 600 psi and can be correlated with the improvement of the field effect mobility of pentacene thin-film transistors
Directory of Open Access Journals (Sweden)
Takeshi Misu, Naonori Sakamoto, Kazuo Shinozaki, Nobuyasu Adachi, Hisao Suzuki and Naoki Wakiya
2011-01-01
Full Text Available Thin films composed of MgAl2O4 and (Ni0.5Zn0.5Fe2O4 ([MA(100-x-NZFx] films were grown on fused SiO2 substrates by pulsed laser deposition. X-ray diffraction measurements revealed that the films were polycrystalline, and that their lattice constant varied linearly with composition, indicating the formation of a solid solution. The film with x=60 was paramagnetic and those with x ≥ 70 were ferromagnetic. The films had a transparency above 75% in the visible range, but the transparency decreased with the x value. The optical band gaps were 2.95, 2.55, 2.30 and 1.89 eV for x=20, 40, 60, 80 and 100, respectively. The Faraday rotation angle increased with x in the visible range, and the film with x=70 exhibited a value of 2000 degrees cm-1 at 570 nm, which is comparable to the rotation angle of Y3Fe5O12. Owing to their high transparency, which extends into the visible range, the [MA(100-x-NZFx] films can be used in novel magneto-optical devices.
Double switching hysteresis loop in a single layer Fe3Pt alloy thin films
International Nuclear Information System (INIS)
Nahid, M.A.I.; Suzuki, Takao
2008-01-01
The Fe 3 Pt alloy thin films were epitaxially grown on MgO(100) substrate by e-beam evaporation. The films were partially ordered at the substrate deposition temperature above 350 deg. C. These partially ordered films exhibit very large biaxial magnetic anisotropy constant in the order of 10 5 J/m 3 and produce double switching in the hysteresis loops. The difference of the switching field of these films can be up to about 3 x 10 5 A/m by tuning the angle of the applied field with respect to the easy axes. This double switching behavior stems from the large biaxial magnetic anisotropy of the films
Macro stress mapping on thin film buckling
Energy Technology Data Exchange (ETDEWEB)
Goudeau, P.; Villain, P.; Renault, P.-O.; Tamura, N.; Celestre, R.S.; Padmore, H.A.
2002-11-06
Thin films deposited by Physical Vapour Deposition techniques on substrates generally exhibit large residual stresses which may be responsible of thin film buckling in the case of compressive stresses. Since the 80's, a lot of theoretical work has been done to develop mechanical models but only a few experimental work has been done on this subject to support these theoretical approaches and nothing concerning local stress measurement mainly because of the small dimension of the buckling (few 10th mm). This paper deals with the application of micro beam X-ray diffraction available on synchrotron radiation sources for stress mapping analysis of gold thin film buckling.
Theoretical investigation of the thermodynamic properties of metallic thin films
International Nuclear Information System (INIS)
Hung, Vu Van; Phuong, Duong Dai; Hoa, Nguyen Thi; Hieu, Ho Khac
2015-01-01
The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks
Theoretical investigation of the thermodynamic properties of metallic thin films
Energy Technology Data Exchange (ETDEWEB)
Hung, Vu Van [Vietnam Education Publishing House, 81 Tran Hung Dao, Hanoi (Viet Nam); Phuong, Duong Dai [Hanoi National University of Education, 136 Xuan Thuy, Hanoi (Viet Nam); Hoa, Nguyen Thi [University of Transport and Communications, Lang Thuong, Dong Da, Hanoi (Viet Nam); Hieu, Ho Khac, E-mail: hieuhk@duytan.edu.vn [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam)
2015-05-29
The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks.
Perovskite phase thin films and method of making
Boyle, Timothy J.; Rodriguez, Mark A.
2000-01-01
The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.
Properties of RF-Sputtered PZT Thin Films with Ti/Pt Electrodes
Directory of Open Access Journals (Sweden)
Cui Yan
2014-01-01
Full Text Available Effect of annealing temperature and thin film thickness on properties of Pb(Zr0.53Ti0.47O3 (PZT thin film deposited via radiofrequency magnetron sputtering technique onto Pt/Ti/SiO2/Si substrate was investigated. Average grain sizes of the PZT thin film were measured by atomic force microscope; their preferred orientation was studied through X-ray diffraction analysis. Average residual stress in the thin film was estimated according to the optimized Stoney formula, and impedance spectroscopy characterization was performed via an intelligent LCR measuring instrument. Average grain sizes of PZT thin films were 60 nm~90 nm and their average roughness was less than 2 nm. According to X-ray diffraction analysis, 600°C is the optimal annealing temperature to obtain the PZT thin film with better crystallization. Average residual stress showed that thermal mismatch was the decisive factor of residual stress in Pt/Ti/SiO2/Si substrate; the residual stress in PZT thin film decreased as their thickness increased and increased with annealing temperature. The dielectric constant and loss angle tangent were extremely increased with the thickness of PZT thin films. The capacitance of the device can be adjusted according to the thickness of PZT thin films.
Structural phase transitions of BaNbxTi1-xO3(0.0≤x≤0.5) thin films
International Nuclear Information System (INIS)
Guo Haizhong; Liu Lifeng; Ding Shuo; Lu Huibin; Zhou Yueliang; Cheng Bolin; Chen Zhenghao
2004-01-01
The phase transition behavior of BaNb x Ti 1-x O 3 (BNTO) (0.0≤x≤0.50) thin films grown on MgO substrates by laser molecular beam epitaxy was systematically investigated by using x-ray diffraction (XRD) and micro-Raman spectroscopy. The asymmetric rocking XRD scan measurements show that with an increase of Nb-doped content, the lattice parameters c and a increase while c/a ratio decreases, indicating a decrease of tetragonality of the BNTO films. The intensity of Raman signal decreases and the width of the bands broaden with increase of Nb-doped content. The results of XRD and Raman spectra indicate that at room temperature BNTO thin films with Nb≤10 at. % have tetragonal structure, however, for Nb≥20 at. %, BNTO thin films exhibit typical disordering cubic structure
Substrate-HTcS thin film interaction studies by (S)TEM
Ramaekers, P.P.J.; Klepper, D.; Kitazawa, K.; Ishiguro, T.
1989-01-01
This paper concerns with compatibility aspects beween HTcS thin film either their substrates. The influence of substrate-thin film interaction and thin film microstructure on the superconducting properties is discussed. In this respect, data based on (S)TEM observations are presented. It is
Photoluminescence of Mg_2Si films fabricated by magnetron sputtering
International Nuclear Information System (INIS)
Liao, Yang-Fang; Xie, Quan; Xiao, Qing-Quan; Chen, Qian; Fan, Meng-Hui; Xie, Jing; Huang, Jin; Zhang, Jin-Min; Ma, Rui; Wang, Shan-Lan; Wu, Hong-Xian; Fang, Di
2017-01-01
Highlights: • High quality Mg_2Si films were grown on Si (111) and glass substrates with magnetron sputtering, respectively. • The first observation of Photoluminescence (PL) of Mg_2Si films was reported. • The Mg_2Si PL emission wavelengths are almost independence on temperature in the range of 77–300 K. • The strongest PL emissions may be attributed to interstitial Mg donor level to valence band transitions. • The activation energy of Mg_2Si is determined from the quenching of major luminescence peaks. - Abstract: To understand the photoluminescence mechanisms and optimize the design of Mg_2Si-based light-emitting devices, Mg_2Si films were fabricated on silicon (111) and glass substrates by magnetron sputtering technique, and the influences of different substrates on the photoelectric properties of Mg_2Si films were investigated systematically. The crystal structure, cross-sectional morphology, composition ratios and temperature-dependent photoluminescence (PL) of the Mg_2Si films were examined using X-ray diffraction (XRD), Scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and PL measurement system, respectively. XRD results indicate that the Mg_2Si film on Si (111) displays polycrystalline structure, whereas Mg_2Si film on glass substrate is of like-monocrystalline structure.SEM results show that Mg_2Si film on glass substrate is very compact with a typical dense columnar structure, and the film on Si substrate represents slight delamination phenomenon. EDS results suggest that the stoichiometry of Mg and Si is approximately 2:1. Photoluminescence (PL) of Mg_2Si films was observed for the first time. The PL emission wavelengths of Mg_2Si are almost independence on temperature in the range of 77–300 K. The PL intensity decreases gradually with increasing temperature. The PL intensity of Mg_2Si films on glass substrate is much larger than that of Mg_2Si film on Si (111) substrate. The activation energy of 18 meV is
Low-field vortex dynamics in various high-Tc thin films
Indian Academy of Sciences (India)
Abstract. We present a novel ac susceptibility technique for the study of vortex creep in supercon- ducting thin films. With this technique we study the dynamics of dilute vortices in c-axis oriented. Y-123, Hg-1212, and Tl-1212 thin films, as well as a-axis oriented Hg-1212 thin films. Results on the Hg-1212 and Tl-1212 thin ...
Atomic Structure Control of Silica Thin Films on Pt(111)
Crampton, Andrew S
2015-05-27
Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.
A novel application of the CuI thin film for preparing thin copper nanowires
International Nuclear Information System (INIS)
Shi Shuo; Sun Jialin; Zhang Jianhong; Cao Yang
2005-01-01
We present a novel application of the CuI thin film for preparing thin copper nanowires under a direct current electric field (DCEF). The CuI thin film was used as a medium for transmitting cuprous ions during the growing process of copper nanowires. As electrodes are the source of cuprous ions, high-purity copper films were deposited on both ends of the CuI thin film. At 353 K, under whole solid condition, without any templates, and having applied a DCEF of 1.5x10 4 V/m, cuprous ions were generated at the anode and migrated towards the cathode through the CuI film. At the edge of the cathode, cuprous ions obtained electrons and congregated to form a disordered thin copper nanowires bundle. The SEM images showed that these copper nanowires were from 10 to 20 nm in diameter and several hundred nanometers in length. The effect of the electric field intensity and the growth temperature on the diameter of the nanowires was also studied
Silicon-integrated thin-film structure for electro-optic applications
McKee, Rodney A.; Walker, Frederick Joseph
2000-01-01
A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.
Nitrogen incorporation in sputter deposited molybdenum nitride thin films
Energy Technology Data Exchange (ETDEWEB)
Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at; Schmid, Ulrich, E-mail: ulrich.e366.schmid@tuwien.ac.at [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail: jenspeter.konrath@infineon.com; Haberl, Verena, E-mail: verena.haberl@infineon.com [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)
2016-03-15
In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.
Choudhary, Sumita; Narula, Rahul; Gangopadhyay, Subhashis
2018-05-01
Precise measurement of electrical sheet resistance and resistivity of metallic thin Cu films may play a significant role in temperature sensing by means of resistivity changes which can further act as a safety measure of various electronic devices during their operation. Four point probes resistivity measurement is a useful approach as it successfully excludes the contact resistance between the probes and film surface of the sample. Although, the resistivity of bulk samples at a particular temperature mostly depends on its materialistic property, however, it may significantly differ in the case of thin films, where the shape and thickness of the sample can significantly influence on it. Depending on the ratio of the film thickness to probe spacing, samples are usually classified in two segments such as (i) thick films or (ii) thin films. Accordingly, the geometric correction factors G can be related to the sample resistivity r, which has been calculated here for thin Cu films of thickness up to few 100 nm. In this study, various rectangular shapes of thin Cu films have been used to determine the shape induced geometric correction factors G. An expressions for G have been obtained as a function of film thickness t versus the probe spacing s. Using these expressions, the correction factors have been plotted separately for each cases as a function of (a) film thickness for fixed linear probe spacing and (b) probe distance from the edge of the film surface for particular thickness. Finally, we compare the experimental results of thin Cu films of various rectangular geometries with the theoretical reported results.
Optical constant of thin gold films
DEFF Research Database (Denmark)
Yakubovsky, D. I.; Fedyanin, D. Yu; Arsenin, A. V.
2017-01-01
The performance of metal-based devices is limited by ohmic losses in the metal, which are determined by electron scattering. The structural properties of gold thin films also play an important role in the film quality, which may affect its' optical properties and the overall capability...... and spectroscopic ellipsometry, the structural morphology and optical properties of polycrystalline gold thin films (fabricated by e-beam deposition at a low sputtering rate smooth gold) in the thickness range of 20 - 200 nm. By extracting the real and imaginary dielectric function and the Drude parameter...... of the device. At the same time, metal films of different thicknesses are needed for different applications and, since these films are polycrystalline, their internal properties and surface roughness can greatly vary from one thickness to another. In this work, we study, using atomic force microscopy...
Preparation and properties of thin films treatise on materials science and technology
Tu, K N
1982-01-01
Treatise on Materials Science and Technology, Volume 24: Preparation and Properties of Thin Films covers the progress made in the preparation of thin films and the corresponding study of their properties. The book discusses the preparation and property correlations in thin film; the variation of microstructure of thin films; and the molecular beam epitaxy of superlattices in thin film. The text also describes the epitaxial growth of silicon structures (thermal-, laser-, and electron-beam-induced); the characterization of grain boundaries in bicrystalline thin films; and the mechanical properti
Hall effect of K-doped superconducting thin films
Energy Technology Data Exchange (ETDEWEB)
Son, Eunseon; Lee, Nam Hoon; Kang, Won Nam [Dept. of physics, Sungkyunkwan University, Suwon (Korea, Republic of); Hwang, Tae Jong; Kim, Dong Ho [Dept. of physics, Yeungnam University, Gyeongsan(Korea, Republic of)
2013-09-15
We have studied Hall effect for potassium (K)-doped BaFe{sub 2}As{sub 2}superconducting thin films by analyzing the relation between the longitudinal resistivity (ρ{sub xy}) and the Hall resistivity (ρ{sub xy}). The thin films used in this study were fabricated on Al{sub O3} (000l) substrates by using an ex-situ pulsed laser deposition (PLD) technique under a high-vacuum condition of ∼10{sup -6} Torr. The samples showed the high superconducting transition temperatures (T{sub C}) of ∼40 K. The ρ{sub xx} and ρ{sub xy}the for K-doped BaFeAs{sub 2} thin films were measured by using a physical property measurement system (PPMS) with a temperature sweep (T-sweep) mode at an applied current density of 100 A/cm{sup 2} and at magnetic fields from 0 up to 9 T. We report the T-sweep results of the ρ{sub xx} and the ρ{sub xy} to investigate Hall scaling behavior on the basis of the relation of ρ{sub xy} = A(ρ{sub xy}){sup β}. The ρ{sub xx} values are 3.0 ± 0.2 in the c-axis-oriented K-doped BaFeAs{sub 2} thin films, whereas the thin films with various oriented-directions like a polycrystal showed slightly lower β than that of c-axis-oriented thin films. Interestingly, the β value is decreased with increasing magnetic fields.
Properties of Spray Pyrolysied Copper Oxide Thin Films
Directory of Open Access Journals (Sweden)
S. S. Roy
2017-02-01
Full Text Available Copper oxide (CuO thin films were deposited on well cleaned glass substrates by spray pyrolysis technique (SPT from cupric acetate (Cu(CH3COO2.H2O precursor solutions of 0.05 – 0.15 M molar concentrations (MC at a substrate temperature of 350 °C and at an air pressure of 1 bar. Effect of varying MC on the surface morphology, structural optical and electrical properties of CuO thin films were investigated. XRD patterns of the prepared films revealed the formation of CuO thin films having monoclinic structure with the main CuO (111 orientation and crystalline size ranging from 8.02 to 9.05 nm was observed. The optical transmission of the film was found to decrease with the increase of MC. The optical band gap of the thin films for 0.10 M was fond to be 1.60 eV. The room temperature electrical resistivity varies from 31 and 24 ohm.cm for the films grown with MC of 0.05 and 0.10 M respectively. The change in resistivity of the films was studied with respect to the change in temperature was shown that semiconductor nature is present. This information is expected to underlie the successful development of CuO films for solar windows and other semi-conductor applications including gas sensors.
Laser-induced damage to thin film dielectric coatings
International Nuclear Information System (INIS)
Walker, T.W.
1980-01-01
The laser-induced damage thresholds of dielectric thin film coatings have been found to be more than an order of magnitude lower than the bulk material damage thresholds. Prior damage studies have been inconclusive in determining the damage mechanism which is operative in thin films. A program was conducted in which thin film damage thresholds were measured as a function of laser wavelength (1.06 μm, 0.53 μm, 0.35 μm and 0.26 μm), laser pulse length (5 and 15 nanoseconds), film materials and film thickness. The large matrix of data was compared to predictions given by avalanche ionization, multiphoton ionization and impurity theories of laser damage. When Mie absorption cross-sections and the exact thermal equations were included into the impurity theory excellent agreement with the data was found. The avalanche and multiphoton damage theories could not account for most parametric variations in the data. For example, the damage thresholds for most films increased as the film thickness decreased and only the impurity theory could account for this behavior. Other observed changes in damage threshold with changes in laser wavelength, pulse length and film material could only be adequately explained by the impurity theory. The conclusion which results from this study is that laser damage in thin film coatings results from absorbing impurities included during the deposition process
Physical Vapor Deposition of Thin Films
Mahan, John E.
2000-01-01
A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam
Energy Technology Data Exchange (ETDEWEB)
Tung, Duy Dao; Jeong, Hyun Dam [Chonnam Natioal University, Gwangju (Korea, Republic of)
2014-09-15
The In{sub 2}S{sub 3} thin films of tetragonal structure and In{sub 2}O{sub 3} films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ([(Et){sub 3}NH]+ [In(SCOCH{sub 3}){sub 4}]''-; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide (SiO{sub 2}) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of 10.1 cm''2 V''-1s''-1 at a curing temperature of 500 o C, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.
Nanostructured thin films and coatings mechanical properties
2010-01-01
The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.
Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films
Li, Na; Chen, Fei; Shen, Qiang; Wang, Chuanbin; Zhang, Lianmeng
2013-03-01
A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.
Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films
International Nuclear Information System (INIS)
Li Na; Chen Fei; Shen Qiang; Wang Chuanbin; Zhang Lianmeng
2013-01-01
A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.
Bi-axially crumpled silver thin-film electrodes for dielectric elastomer actuators
International Nuclear Information System (INIS)
Low, Sze-Hsien; Lau, Gih-Keong
2014-01-01
Metal thin films, which have high conductivity, are much stiffer and may fracture at a much lower strain than dielectric elastomers. In order to fabricate compliant electrodes for use in dielectric elastomer actuators (DEAs), metal thin films have been formed into either zigzag patterns or corrugations, which favour bending and only allow uniaxial DEA deformations. However, biaxially compliant electrodes are desired in order to maximize generated forces of DEA. In this paper, we present crumpled metal thin-film electrodes that are biaxially compliant and have full area coverage over the dielectric elastomer. These crumpled metal thin-film electrodes are more stretchable than flat metal thin films; they remain conductive beyond 110% radial strain. Also, crumpling reduced the stiffening effect of metal thin films on the soft elastomer. As such, DEAs using crumpled metal thin-film electrodes managed to attain relatively high actuated area strains of up to 128% at 1.8 kV (102 Vμm −1 ). (paper)
Energy Technology Data Exchange (ETDEWEB)
Krishnan, M. [Surface Engineering Division, CSIR-National Aerospace Laboratories, Bangalore 560 017 (India); Department of Physics, National Institute of Technology Calicut, Calicut 673601 (India); Predeep, P. [Department of Physics, National Institute of Technology Calicut, Calicut 673601 (India); Sridhara Rao, D.V. [Defence Metallurgical Research Laboratories, Hyderabad 500058 (India); Prajapat, C.L.; Singh, M.R. [Technical Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Barshilia, Harish C. [Surface Engineering Division, CSIR-National Aerospace Laboratories, Bangalore 560 017 (India); Chowdhury, P., E-mail: pchowdhury@nal.res.in [Surface Engineering Division, CSIR-National Aerospace Laboratories, Bangalore 560 017 (India)
2017-05-15
Hard magnetic thin films with high coercivity were fabricated by magnetron sputtering on MgO(100) and quartz substrates. The films were grown by depositing sequentially Sm and Co layers at an elevated substrate temperature of 500 °C. Subsequent post-annealing was carried out at various temperatures in range of 500–700 °C to form Sm-Co hard magnetic thin films. X-ray diffraction studies revealed the formation of randomly oriented SmCo{sub 5} crystallites on quartz substrate, whereas, a textured growth of Sm{sub 2}Co{sub 7} with strong (110) crystalline phases was observed on MgO substrate. Microstructural analyses were carried out using Transmission Electron Microscopy (TEM) for samples grown on MgO substrate at 650 °C and inferred the presence of high density planar defects along with large grain boundaries. Further microdiffraction studies confirmed the presence of SmCo{sub 3} as an impurity phase in the films. Magnetic hysteresis measurements indicate the square hysteresis behaviors with high coercivity value of 3.1 T and 2.7 T for 650 °C annealed samples on both MgO and quartz substrates, respectively. The origin of such high coercivity value was then correlated with pinning type of spin reversal mechanism as confirmed through the analyses of demagnetization curves. The magnetic force microscopy images for films on MgO substrate, annealed at 650 °C, revealed the presence of magnetic domains with size higher than 1 µm. The formed magnetic domains lacked well defined boundaries indicating an enhanced exchange coupling between the grain clusters. - Highlights: • Ewald technique in micromagnetic simulations with periodic boundary conditions. • Effect of micromagnetic parameters on hysteresis in exchange spring magnets. • Importance of the interface exchange coupling for hard-soft nanocomposites. • Geometry dependence of the optimal soft phase size in exchange spring magnets.
Subtle Raman signals from nano-diamond and β-SiC thin films
International Nuclear Information System (INIS)
Kuntumalla, Mohan Kumar; Ojha, Harish; Srikanth, Vadali Venkata Satya Siva
2013-01-01
Micro Raman scattering experiments are carried out in pursuit of subtle but discernable signals from nano-diamond and β-SiC thin films. The thin films are synthesized using microwave plasma assisted chemical vapor deposition technique. Raman scattering experiments in conjunction with scanning electron microscopy and x-ray diffraction were carried out to extract microstructure and phase information of the above mentioned thin films. Certain subtle Raman signals have been identified in this work. In the case of nanodiamond thin films, Raman bands at ∼ 485 and ∼ 1220 cm −1 are identified. These bands have been assigned to the nanodiamond present in nanodiamond thin films. In the case of nano β-SiC thin films, optical phonons are identified using surface enhanced Raman scattering. - Highlights: ► Subtle Raman signals from nano-diamond and β-silicon carbide related thin films. ► Raman bands at ∼ 485 and ∼ 1220 cm −1 from nanodiamond thin films are identified. ► Longitudinal optical phonon from nano β-silicon carbide thin films is identified
In vitro behaviour of nanocrystalline silver-sputtered thin films
International Nuclear Information System (INIS)
Piedade, A P; Vieira, M T; Martins, A; Silva, F
2007-01-01
Silver thin films were deposited with different preferential orientations and special attention was paid to the bioreactivity of the surfaces. The study was essentially focused on the evaluation of the films by x-ray diffraction (XRD), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), electron probe microanalysis (EPMA) and contact angle measurements. The deposited thin films were characterized before and after immersion in S-enriched simulated human plasma in order to estimate the influence of the preferential crystallographic orientation on the in vitro behaviour. Silver thin films with and without (111) preferential crystallographic orientation were deposited by r.f. magnetron sputtering to yield nanocrystalline coatings, high compact structures, very hydrophobic surfaces and low roughness. These properties reduce the chemisorption of reactive species onto the film surface. The in vitro tests indicate that silver thin films can be used as coatings for biomaterials applications
Ion Beam Assisted Deposition of Thin Epitaxial GaN Films.
Rauschenbach, Bernd; Lotnyk, Andriy; Neumann, Lena; Poppitz, David; Gerlach, Jürgen W
2017-06-23
The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy GaN thin films on (0001)-oriented 6H-SiC substrates at 700 °C. The films are studied in situ by reflection high energy electron diffraction, ex situ by X-ray diffraction, scanning tunnelling microscopy, and high-resolution transmission electron microscopy. It is demonstrated that the film growth mode can be controlled by varying the ion to atom ratio, where 2D films are characterized by a smooth topography, a high crystalline quality, low biaxial stress, and low defect density. Typical structural defects in the GaN thin films were identified as basal plane stacking faults, low-angle grain boundaries forming between w-GaN and z-GaN and twin boundaries. The misfit strain between the GaN thin films and substrates is relieved by the generation of edge dislocations in the first and second monolayers of GaN thin films and of misfit interfacial dislocations. It can be demonstrated that the low-energy nitrogen ion assisted molecular beam epitaxy is a technique to produce thin GaN films of high crystalline quality.
Catalytic EC′ reaction at a thin film modified electrode
International Nuclear Information System (INIS)
Gerbino, Leandro; Baruzzi, Ana M.; Iglesias, Rodrigo A.
2013-01-01
Numerical simulations of cyclic voltammograms corresponding to a catalytic EC′ reaction taking place at a thin film modified electrode are performed by way of finite difference method. Besides considering the chemical kinetic occurring inside the thin film, the model takes into account the different diffusion coefficients for each species at each of the involved phases, i.e. the thin film layer and bulk solution. The theoretical formulation is given in terms of dimensionless model parameters but a brief discussion of each of these parameters and their relationship to experimental variables is presented. Special emphasis is given to the use of working curve characteristics to quantify diffusion coefficient, homogeneous kinetic constant and thickness of the thin layer in a real system. Validation of the model is made by comparison of experimental results corresponding to the electron charge transfer of Ru(NH 3 ) 6 3+ /Ru(NH 3 ) 6 2+ hemi-couple at a thin film of a cross-linked chitosan film containing an immobilized redox dye
Room temperature ferroelectricity in continuous croconic acid thin films
Energy Technology Data Exchange (ETDEWEB)
Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Ahmadi, Zahra; Costa, Paulo S. [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Zhang, Xiaozhe [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Department of Physics, Xi' an Jiaotong University, Xi' an 710049 (China); Wang, Xiao; Yu, Le; Cheng, Xuemei [Department of Physics, Bryn Mawr College, Bryn Mawr, Pennsylvania 19010 (United States); DiChiara, Anthony D. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Gruverman, Alexei, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Enders, Axel, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Xu, Xiaoshan, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588 (United States)
2016-09-05
Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.
Subtractive fabrication of ferroelectric thin films with precisely controlled thickness
Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.
2018-04-01
The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.
Solution processed pentacene thin films and their structural properties
International Nuclear Information System (INIS)
Tao Chunlan; Zhang Xuhui; Zhang Fujia; Liu Yiyang; Zhang Haoli
2007-01-01
The paper reported the solution process of pentacene thin films from organic solvent O-dichlorobenzene. The pentacene thin films obtained from different conditions were characterized by X-ray diffraction (XRD), optical microscopy, scanning electron microscopy (SEM), and UV-vis spectroscopy. The result shows that the pentacene solution was successfully obtained at a minimum temperature of 40 deg. C. The optimum temperature of forming pentacene thin films was 100 deg. C
Stability of tetraphenyl butadiene thin films in liquid xenon
International Nuclear Information System (INIS)
Sanguino, P.; Balau, F.; Botelho do Rego, A.M.; Pereira, A.; Chepel, V.
2016-01-01
Tetraphenyl butadiene (TPB) is widely used in particle detectors as a wavelength shifter. In this work we studied the stability of TPB thin films when immersed in liquid xenon (LXe). The thin films were deposited on glass and quartz substrates by thermal evaporation. Morphological and chemical surface properties were monitored before and after immersion into LXe by scanning electron microscopy and X-ray photoelectron spectroscopy. No appreciable changes have been detected with these two methods. Grain size and surface chemical composition were found to be identical before and after submersion into LXe. However, the film thickness, measured via optical transmission in the ultraviolet–visible wavelength regions, decreased by 1.6 μg/cm 2 (24%) after immersion in LXe during 20 h. These results suggest the necessity of using a protective thin film over the Tetraphenyl butadiene when used as a wavelength shifter in LXe particle detectors. - Highlights: • Stability of tetraphenyl butadiene (TPB) thin films immersed in liquid xenon (LXe). • Thermally evaporated TPB thin films were immersed in LXe for 20 h. • Film morphology and chemical surface properties remained unchanged. • Surface density of the films decreased by 1.6 μg/cm 2 (24%) after immersion in LXe. • For using in LXe particle detectors, TPB films should be protected with a coating.
Energy Technology Data Exchange (ETDEWEB)
Su Zhenghua; Yan Chang; Sun Kaiwen; Han Zili [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Fangyang, E-mail: liufangyang@csu.edu.cn [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Jin [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Lai Yanqing, E-mail: laiyanqingcsu@163.com [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Li Jie; Liu Yexiang [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China)
2012-07-15
Earth-abundant Cu{sub 2}ZnSnS{sub 4} is a promising alternative photovoltaic material which has been examined as absorber layer of thin film solar cells. In this study, Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been successfully fabricated by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction (SILAR) method. The prepared CZTS thin films have been characterized by X-ray diffraction, energy dispersive spectrometer, Raman spectroscopy, UV-vis spectroscopy, Hall effect measurements and photoelectrochemical tests. Results reveal that the thin films have kesterite structured Cu{sub 2}ZnSnS{sub 4} and the p-type conductivity with a carrier concentration in the order of 10{sup 18} cm{sup -3} and an optical band gap of 1.5 eV, which are suitable for applications in thin film solar cells.
Epitaxial growth and properties of YBaCuO thin films
International Nuclear Information System (INIS)
Geerk, J.; Linker, G.; Meyer, O.
1989-08-01
The growth quality of YBaCuO thin films deposited by sputtering on different substrates (Al 2 O 3 , MgO, SrTiO 3 , Zr(Y)O 2 ) has been studied by X-ray diffraction and channeling experiments as a function of the deposition temperature. Besides the substrate orientation, the substrate temperature is the parameter determining whether films grow in c-, a-, (110) or mixed directions. Epitaxial growth correlates with high critical current values in the films of up to 5.5x10 6 A/cm 2 at 77 K. Ultrathin films with thicknesses down to 2 nm were grown revealing three-dimensional superconducting behaviour. Films on (100) SrTiO 3 of 9 nm thickness and below are partially strained indicating commensurate growth. From the analysis of the surface disorder 1 displaced Ba atom per Ba 2 Y row was obtained indicating that the disordered layer thickness is about 0.6 nm. Tunnel junctions fabricated on these films reveal gap-like structures near ±16 mV and ±30 mV. (orig.) [de
Molecular dynamics simulation of Cu/Au thin films under temperature gradient
International Nuclear Information System (INIS)
Li, Qibin; Peng, Xianghe; Peng, Tiefeng; Tang, Qizhong; Zhang, Xiaomin; Huang, Cheng
2015-01-01
Graphical abstract: Heat transportation in the thin films. - Highlights: • The coherent lattice interface is found at thin films after annealing. • The vacancies are observed clearly in the deposit thin films. • The defect and component will influence the energy transportation in the coatings. • The vacancies and lattice mismatch can enlarge the mobility of atoms. • The phonon transportation in thin films has no apparent rule. - Abstract: Three modulation period thin films, 1.8 nm Cu/3.6 nm Au, 2.7 nm Cu/2.7 nm Au and 3.6 nm Cu/1.8 nm Au, are obtained from deposition method and ideal modeling based on lattice constant, to examine their structures and thermophysical characteristics under temperature gradient. The coherent lattice interface is found both at deposit and ideal thin films after annealing. Also, the vacancies are observed clearly in the deposit thin films. The defect and component of thin films will influence the energy transportation in the coatings. The vacancies and lattice mismatch can enlarge the mobility of atoms and result in the failure of coating under the thermal stress. The power spectrum of atoms’ movement has no apparent rule for phonon transportation in thin films. The results are helpful to reveal the micro-mechanism and provide reasonable basis for the failure of metallic coatings.
Molecular dynamics simulation of Cu/Au thin films under temperature gradient
Energy Technology Data Exchange (ETDEWEB)
Li, Qibin, E-mail: qibinli@cqu.edu.cn [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); State Key Laboratory of Coal Mine Disaster Dynamics and Control, Chongqing University, Chongqing 400030 (China); Chongqing Key Laboratory of Heterogeneous Material Mechanics, Chongqing University, Chongqing 400030 (China); Peng, Xianghe [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); State Key Laboratory of Coal Mine Disaster Dynamics and Control, Chongqing University, Chongqing 400030 (China); Peng, Tiefeng, E-mail: pengtiefeng@cqu.edu.cn [State Key Laboratory of Coal Mine Disaster Dynamics and Control, Chongqing University, Chongqing 400030 (China); Tang, Qizhong [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); Zhang, Xiaomin [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); Chongqing Key Laboratory of Heterogeneous Material Mechanics, Chongqing University, Chongqing 400030 (China); Huang, Cheng [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China)
2015-12-01
Graphical abstract: Heat transportation in the thin films. - Highlights: • The coherent lattice interface is found at thin films after annealing. • The vacancies are observed clearly in the deposit thin films. • The defect and component will influence the energy transportation in the coatings. • The vacancies and lattice mismatch can enlarge the mobility of atoms. • The phonon transportation in thin films has no apparent rule. - Abstract: Three modulation period thin films, 1.8 nm Cu/3.6 nm Au, 2.7 nm Cu/2.7 nm Au and 3.6 nm Cu/1.8 nm Au, are obtained from deposition method and ideal modeling based on lattice constant, to examine their structures and thermophysical characteristics under temperature gradient. The coherent lattice interface is found both at deposit and ideal thin films after annealing. Also, the vacancies are observed clearly in the deposit thin films. The defect and component of thin films will influence the energy transportation in the coatings. The vacancies and lattice mismatch can enlarge the mobility of atoms and result in the failure of coating under the thermal stress. The power spectrum of atoms’ movement has no apparent rule for phonon transportation in thin films. The results are helpful to reveal the micro-mechanism and provide reasonable basis for the failure of metallic coatings.
CdS thin films prepared by laser assisted chemical bath deposition
International Nuclear Information System (INIS)
Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A.; Krishnan, B.; Avellaneda, D.; Castillo, G.A.; Das Roy, T.K.; Shaji, S.
2015-01-01
Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties
CdS thin films prepared by laser assisted chemical bath deposition
Energy Technology Data Exchange (ETDEWEB)
Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)
2015-05-01
Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties.
Yang, Jing-Jing; Wang, Gang; Du, Wen-Han; Xiong, Chao
2017-07-01
The electrical transport properties are the key factors to determine the performance of ZnO-based quantum effect device. ZnMgO is a typical material to regulate the band of ZnO. In order to investigate the electrical properties of the interface of ZnO/Zn0.85Mg0.15O films, three kinds of ZnO/Zn0.85Mg0.15O films have been fabricated with different thickness. After comparing the structural and electrical properties of the samples, we found that the independent Zn0.85Mg0.15O hexagonal wurtzite structure (002) peak can be detected in XRD spectra. Hall-effect test data confirmed that the two-dimensional electron gas (2DEG) became lower because of the decrease of thickness of Zn0.85Mg0.15O films, increase of impurity scattering and lattice structure distortion caused by the increase of Mg content.
Sputtered molybdenum thin films and the application in CIGS solar cells
Energy Technology Data Exchange (ETDEWEB)
Zhou, D.; Zhu, H., E-mail: hongbing1982@hotmail.com; Liang, X.; Zhang, C.; Li, Z.; Xu, Y.; Chen, J.; Zhang, L.; Mai, Y., E-mail: yaohuamai@hbu.edu.cn
2016-01-30
Graphical abstract: - Highlights: • Mo thin films are prepared by magnetron sputtering. • The dynamic deposition rate increases with the increasing discharge power. • The surface structure of Mo films varies with discharge power and working pressure. • High efficiency CIGS thin film solar cell of 15.2% has been obtained. - Abstract: Molybdenum (Mo) thin films are prepared by magnetron sputtering with different discharge powers and working pressures for the application in Cu(In, Ga)Se{sub 2} (CIGS) thin film solar cells as back electrodes. Properties of these Mo thin films are systematically investigated. It is found that the dynamic deposition rate increases with the increasing discharge power while decreases with the increasing working pressure. The highest dynamic deposition rate of 15.1 nm m/min is achieved for the Mo thin film deposited at the discharge power of 1200 W and at the working pressure of 0.15 Pa. The achieved lowest resistivity of 3.7 × 10{sup −5} Ω cm is attributed to the large grains in the compact thin film. The discharge power and working pressure have great influence on the sputtered Mo thin films. High efficiency of 12.5% was achieved for the Cu(In, Ga)Se{sub 2} (CIGS) thin film solar cells with Mo electrodes prepared at 1200 W and low working pressures. By further optimizing material and device properties, the conversion efficiency has reached to 15.2%.
Energy Technology Data Exchange (ETDEWEB)
Sobota, R. [Department of Experimental Physics, FMPI, Comenius University, 842 48 Bratislava (Slovakia); Plecenik, T., E-mail: tomas.plecenik@fmph.uniba.sk [Department of Experimental Physics, FMPI, Comenius University, 842 48 Bratislava (Slovakia); Gregor, M.; Truchly, M.; Satrapinskyy, L.; Vidis, M.; Secianska, K. [Department of Experimental Physics, FMPI, Comenius University, 842 48 Bratislava (Slovakia); Kurth, F.; Holzapfel, B.; Iida, K. [Institute for Metallic Materials, IFW Dresden, PO Box 270116, D-01171 Dresden (Germany); Kus, P.; Plecenik, A. [Department of Experimental Physics, FMPI, Comenius University, 842 48 Bratislava (Slovakia)
2014-09-01
Highlights: • Surfaces of Co-doped Ba-122 films on various substrates were studied. • Substrate influences topography and surface conductivity distribution of the films. • Surface conductivity of Co-doped Ba-122 is highly inhomogeneous. • Point contact spectroscopy results can be affected by the surface differences. - Abstract: Surface properties of Co-doped BaFe{sub 2}As{sub 2} (Ba-122) thin films prepared by pulsed laser deposition on MgO with Fe buffer layer and CaF{sub 2} substrates were inspected by atomic force microscopy, scanning spreading resistance microscopy, scanning tunneling microscopy, X-ray photoelectron spectroscopy, auger electron spectroscopy/microscopy and point contact spectroscopy (PCS). Selected PCS spectra were fitted by extended 1D BTK model. The measurements were done on as-received as well as ion beam etched surfaces. Our results show that the substrate is considerably influencing the surface properties of the films, particularly the topography and surface conductivity distribution, what can affect results obtained by surface-sensitive techniques like PCS.
The optical properties of plasma polymerized polyaniline thin films
Energy Technology Data Exchange (ETDEWEB)
Goktas, Hilal, E-mail: hilal_goktas@yahoo.com [Canakkale Onsekiz Mart University, Physics Department, 17020 Canakkale (Turkey); Demircioglu, Zahide; Sel, Kivanc [Canakkale Onsekiz Mart University, Physics Department, 17020 Canakkale (Turkey); Gunes, Taylan [Yalova University, Energy Systems Engineering Department, 77100 Yalova (Turkey); Kaya, Ismet [Canakkale Onsekiz Mart University, Chemistry Department, 17020 Canakkale (Turkey)
2013-12-02
We report herein the characterizations of polyaniline thin films synthesized using double discharge plasma system. Quartz glass substrates were coated at a pressure of 80 Pa, 19.0 kV pulsed and 1.5 kV dc potential. The substrates were located at different regions in the reactor to evaluate the influence of the position on the morphological and molecular structure of the obtained thin films. The molecular structure of the thin films was investigated by Fourier transform infrared (FTIR) and UV–visible photospectrometers (UV–vis), and the morphological studies were carried out by scanning electron microscope. The FTIR and UV–vis data revealed that the molecular structures of the synthesized thin films were in the form of leuocoemeraldine and exhibited similar structures with the films produced via chemical or electrochemical methods. The optical energy band gap values of the as-grown samples ranged from 2.5 to 3.1 eV, which indicated that these materials have potential applications in semiconductor devices. The refractive index in the transparent region (from 650 to 1000 nm) steadily decreased from 1.9 to 1.4 and the extinction coefficient was found to be on order of 10{sup −4}. The synthesized thin films showed various degrees of granular morphologies depending on the location of the substrate in the reactor. - Highlights: • Polyaniline thin films were synthesized for the first time via double discharge plasma system. • The films have similar structure to that of the chemically synthesized films. • The morphology of the films could be tuned by this technique. • These materials would have potential applications at semiconductor devices.
Polymer surfaces, interfaces and thin films
Energy Technology Data Exchange (ETDEWEB)
Stamm, M [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany)
1996-11-01
Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs.
Polymer surfaces, interfaces and thin films
International Nuclear Information System (INIS)
Stamm, M.
1996-01-01
Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs
Flush Mounting Of Thin-Film Sensors
Moore, Thomas C., Sr.
1992-01-01
Technique developed for mounting thin-film sensors flush with surfaces like aerodynamic surfaces of aircraft, which often have compound curvatures. Sensor mounted in recess by use of vacuum pad and materials selected for specific application. Technique involves use of materials tailored to thermal properties of substrate in which sensor mounted. Together with customized materials, enables flush mounting of thin-film sensors in most situations in which recesses for sensors provided. Useful in both aircraft and automotive industries.
Solid surfaces, interfaces and thin films
Lüth, Hans
2015-01-01
This book emphasises both experimental and theoretical aspects of surface, interface and thin-film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological structure, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure research, particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures. A special chapter of the book is devoted to collective phenomena at interfaces and in thin films such as superconductivity and magnetism. The latter topic includes the meanwhile important issues giant magnetoresistance and spin-transfer torque mechanism, both effects being of high interest in information technology. In this new edition, for the first time, the effect of spin-orbit coupling on surface states is treated. In this context the class of the recently detected topological insulators,...
Solid Surfaces, Interfaces and Thin Films
Lüth, Hans
2010-01-01
This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure physics particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures as well as to superconductor/semiconductor interfaces and magnetic thin films. The latter topic was significantly extended in this new edition by more details about the giant magnetoresistance and a section about the spin-transfer torque mechanism including one new problem as exercise. Two new panels about Kerr-effect and spin-polarized scanning tunnelling microscopy were added, too. Furthermore, the meanwhile important group III-nitride surfaces and high-k oxide/semiconductor interfaces are shortly discu...
12. International conference on thin films (ICTF 12). Book of Abstract
International Nuclear Information System (INIS)
Majkova, E.
2002-09-01
The publication has been set up as a proceedings of the conference dealing with thin films production and study of their properties. The conference was focused on the following topics: (1) Advanced deposition techniques; (2) Thin Film Growth; (3) Diagnostics, Structure - Properties Relationship; (4) Mechanical Properties and Stress; (5) Protective and Functional Coatings; (6) Micropatterning and Nanostructures; (7) EUV and Soft X-Ray Multilayers; (8) Magnetic Thin Films and Multilayers; (9) Organic Thin Films; (10) Thin Films for Electronics and Optics. In this proceedings totally 157 abstracts are published of which 126 are interest for INIS
Thin film growth of CaFe2As2 by molecular beam epitaxy
International Nuclear Information System (INIS)
Hatano, T; Fujimoto, R; Nakamura, I; Mori, Y; Ikuta, H; Kawaguchi, T; Harada, S; Ujihara, T
2016-01-01
Film growth of CaFe 2 As 2 was realized by molecular beam epitaxy on six different substrates that have a wide variation in the lattice mismatch to the target compound. By carefully adjusting the Ca-to-Fe flux ratio, we obtained single-phase thin films for most of the substrates. Interestingly, an expansion of the CaFe 2 As 2 lattice to the out-of-plane direction was observed for all films, even when an opposite strain was expected. A detailed microstructure observation of the thin film grown on MgO by transmission electron microscope revealed that it consists of cube-on-cube and 45°-rotated domains. The latter domains were compressively strained in plane, which caused a stretching along the c-axis direction. Because the domains were well connected across the boundary with no appreciable discontinuity, we think that the out-of-plane expansion in the 45°-rotated domains exerted a tensile stress on the other domains, resulting in the unexpectedly large c-axis lattice parameter, despite the apparently opposite lattice mismatch. (paper)
Thin film growth of CaFe2As2 by molecular beam epitaxy
Hatano, T.; Kawaguchi, T.; Fujimoto, R.; Nakamura, I.; Mori, Y.; Harada, S.; Ujihara, T.; Ikuta, H.
2016-01-01
Film growth of CaFe2As2 was realized by molecular beam epitaxy on six different substrates that have a wide variation in the lattice mismatch to the target compound. By carefully adjusting the Ca-to-Fe flux ratio, we obtained single-phase thin films for most of the substrates. Interestingly, an expansion of the CaFe2As2 lattice to the out-of-plane direction was observed for all films, even when an opposite strain was expected. A detailed microstructure observation of the thin film grown on MgO by transmission electron microscope revealed that it consists of cube-on-cube and 45°-rotated domains. The latter domains were compressively strained in plane, which caused a stretching along the c-axis direction. Because the domains were well connected across the boundary with no appreciable discontinuity, we think that the out-of-plane expansion in the 45°-rotated domains exerted a tensile stress on the other domains, resulting in the unexpectedly large c-axis lattice parameter, despite the apparently opposite lattice mismatch.
P-type thin films transistors with solution-deposited lead sulfide films as semiconductor
Energy Technology Data Exchange (ETDEWEB)
Carrillo-Castillo, A.; Salas-Villasenor, A.; Mejia, I. [Department of Materials Science and Engineering, The University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Aguirre-Tostado, S. [Centro de Investigacion en Materiales Avanzados, S. C. Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica, Apodaca, Nuevo Leon, C.P. 666000 (Mexico); Gnade, B.E. [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Quevedo-Lopez, M.A., E-mail: mxq071000@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States)
2012-01-31
In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was {approx} 0.09 cm{sup 2} V{sup -1} s{sup -1} whereas the mobility for devices annealed at 150 Degree-Sign C/h in forming gas increased up to {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Besides the thermal annealing, the entire fabrications process was maintained below 100 Degree-Sign C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 Degree-Sign C anneal as well as a function of the PbS active layer thicknesses. - Highlights: Black-Right-Pointing-Pointer Thin film transistors with PbS as semiconductor deposited by chemical bath deposition. Black-Right-Pointing-Pointer Photolithography-based thin film transistors with PbS films at low temperatures. Black-Right-Pointing-Pointer Electron mobility for anneal-PbS devices of {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Black-Right-Pointing-Pointer Highest mobility reported in thin film transistors with PbS as the semiconductor.
NbN thin films for superconducting radio frequency cavities
Roach, W. M.; Skuza, J. R.; Beringer, D. B.; Li, Z.; Clavero, C.; Lukaszew, R. A.
2012-12-01
NbN thin films have the potential to be incorporated into radio frequency cavities in a multilayer coating to overcome the fundamental field gradient limit of 50 MV m-1 for the bulk niobium based technology that is currently implemented in particle accelerators. In addition to having a larger critical field value than bulk niobium, NbN films develop smoother surfaces which are optimal for cavity performance and lead to fewer losses. Here, we present a study on the correlation of film deposition parameters, surface morphology, microstructure, transport properties and superconducting properties of NbN thin films. We have achieved films with bulk-like lattice parameters and superconducting transition temperatures. These NbN films have a lower surface roughness than similarly grown niobium films of comparable thickness. The potential application of NbN thin films in accelerator cavities is discussed.
NbN thin films for superconducting radio frequency cavities
International Nuclear Information System (INIS)
Roach, W M; Clavero, C; Lukaszew, R A; Skuza, J R; Beringer, D B; Li, Z
2012-01-01
NbN thin films have the potential to be incorporated into radio frequency cavities in a multilayer coating to overcome the fundamental field gradient limit of 50 MV m −1 for the bulk niobium based technology that is currently implemented in particle accelerators. In addition to having a larger critical field value than bulk niobium, NbN films develop smoother surfaces which are optimal for cavity performance and lead to fewer losses. Here, we present a study on the correlation of film deposition parameters, surface morphology, microstructure, transport properties and superconducting properties of NbN thin films. We have achieved films with bulk-like lattice parameters and superconducting transition temperatures. These NbN films have a lower surface roughness than similarly grown niobium films of comparable thickness. The potential application of NbN thin films in accelerator cavities is discussed. (paper)
Chemical bath deposited Mg{sub x}Zn{sub 1−x}S(O) thin films and their photoluminescence properties
Energy Technology Data Exchange (ETDEWEB)
Inamdar, Akbar I.; Han, Jaeseok; Jo, Yongcheol; Kim, Jongmin; Pawar, S.M. [Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715 (Korea, Republic of); Yuldashev, Shavkat U. [Quantum-Functional Semiconductor Research Centre, Dongguk University, Seoul100-715 (Korea, Republic of); Kim, Hyungsang, E-mail: hskim@dongguk.edu [Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715 (Korea, Republic of); Im, Hyunsik, E-mail: hyunsik7@dongguk.edu [Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715 (Korea, Republic of)
2015-12-15
A zinc sulfide (ZnS) specimen was intentionally doped with transition metal (Mg-donor) elements using a chemical bath deposition (CBD) technique. Both the un-doped and the magnesium (Mg)-doped ZnS samples were confirmed to have hexagonal wurtzite ZnS crystal structure. The XRD patterns showed no characteristic peak for Mg indicating that the Mg{sup 2+} ions had been incorporated into ZnS(O) lattice sites. In contrast to un-doped samples, Mg doping resulted in changes in the morphological features of the spherical clusters which resulted in porous, spongy vermicular structures. The energy band gap of the Mg{sub x}Zn{sub 1−x}S(O) film was slightly larger than that for the ZnS(O) film. A photoluminescence study revealed that the emissions were near violet–blue–green in color. The emission characteristics consist of two components; emission in the near violet and in visible region. That is the first is between 4160 and 4400 Å and the second is at 5190 Å, and these are associated with the donor–acceptor transitions with sulfur vacancies as acceptors and the magnesium related defects (trap states) in the samples respectively. - Highlights: • Mg{sub x}Zn{sub 1−x}S(O) films are grown using a chemical bath deposition (CBD) technique. • Energy band widening and morphological changes are observed after Mg doping. • A PL study revealed that the emissions are near violet–blue–green in color. • The emissions are associated with the sulfur vacancies and Mg trap states.
Singh, Satyendra Kumar; Hazra, Purnima
2018-05-01
This work reports fabrication and characterization of p-Si/ MgxZn1-xO thin film heterojunction diodes grown by RF magnetron sputtering technique. In this work, ZnO powder was mixed with MgO powder at per their weight percentage from 0 to 10% to prepare MgxZn1-xO target. The microstructural, surface morphological and optical properties of as-deposited p-Si/MgxZn1-xO heterostructure thin films have been studied using X-ray Diffraction, atomic force microscopy and variable angle ellipsometer. XRD spectra exhibit that undoped ZnO thin films has preferred crystal orientation in (002) plane. However, with increase in Mg-doping, ZnO (101) crystal plane is enhanced progressively due to phase segregation, even though preferred growth orientation of ZnO crystals is still towards (002) plane. The electrical characteristics of Si/ MgxZn1-xO heterojunction diodes with large area Al/Ti ohmic contacts are evaluated using semiconductor parameter analyzer. With rectification ratio of 27894, reverse saturation current of 20.5 nA and barrier height of 0.724 eV, Si/Mg0.5Zn0.95O thin film heterojunction diode is believed to have potential to be used in wider bandgap nanoelectronic device applications.
Research Progress on Measurement Methods and Influence Factors of Thin-film Stress
Directory of Open Access Journals (Sweden)
MA Yibo
2018-02-01
Full Text Available With the size of thin-film electronic devices decreasing, the film stress became an important reason for the failure of thin film devices. Film stress not only affected the membrane structure, but also associated with film optics, electricity, mechanics and other properties, therefore film stress turned into one hot spot in the research field of thin-film materials. This paper reviewed the latest research progress of film stress, substrate curvature method, X-ray diffraction technique and Raman spectroscopy, several frequently used stress measuring techniques were compared and analyzed, and composition ratios of thin film, substrate types, magnetron sputtering process parameters (sputtering power, work pressure, substrate temperature and annealing etc. factors influencing thin film stress were summarized. It was found that substrate curvature method was suitable for measuring almost all kinds of thin film materials. X-ray diffraction and Raman spectroscopy were just fit for measuring materials with characteristic peaks. Nanoindentation method required extra stress-free samples as comparison experiments. During film fabrication and annealing process, film stress usually transited from compressive to tensile status, and several factors combined together could affect stress, so film stress could be reached the minimum value or even stress-free status through setting appropriate parameters. Finally, combined with film stress research status, accurate stress measurement methods for different materials as a thin-film stress research direction were introduced, and challenges in thin film detection range were pointed out.
Magnetite thin films: A simulational approach
International Nuclear Information System (INIS)
Mazo-Zuluaga, J.; Restrepo, J.
2006-01-01
In the present work the study of the magnetic properties of magnetite thin films is addressed by means of the Monte Carlo method and the Ising model. We simulate LxLxd magnetite thin films (d being the film thickness and L the transversal linear dimension) with periodic boundary conditions along transversal directions and free boundary conditions along d direction. In our model, both the three-dimensional inverse spinel structure and the interactions scheme involving tetrahedral and octahedral sites have been considered in a realistic way. Results reveal a power-law dependence of the critical temperature with the film thickness accordingly by an exponent ν=0.81 and ruled out by finite-size scaling theory. Estimates for the critical exponents of the magnetization and the specific heat are finally presented and discussed
TI--CR--AL--O thin film resistors
Jankowski, Alan F.; Schmid, Anthony P.
2000-01-01
Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.
Structural characterization of ZnO thin films grown on various substrates by pulsed laser deposition
International Nuclear Information System (INIS)
Novotný, M; Bulíř, J; Lančok, J; Čížek, J; Kužel, R; Connolly, J; McCarthy, E; Krishnamurthy, S; Mosnier, J-P; Anwand, W; Brauer, G
2012-01-01
ZnO thin films were grown by pulsed laser deposition on three different substrates: sapphire (0 0 0 1), MgO (1 0 0) and fused silica (FS). The structure and morphology of the films were characterized by x-ray diffraction and scanning electron microscopy and defect studies were carried out using slow positron implantation spectroscopy (SPIS). Films deposited on all substrates studied in this work exhibit the wurtzite ZnO structure and are characterized by an average crystallite size of 20-100 nm. However, strong differences in the microstructure of films deposited on various substrates were found. The ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit local epitaxy, i.e. a well-defined relation between film crystallites and the substrate. Domains with different orientation relationships with the substrate were found in both films. On the other hand, the film deposited on the FS substrate exhibits fibre texture with random lateral orientation of crystallites. Extremely high compressive in-plane stress of σ ∼ 14 GPa was determined in the film deposited on the MgO substrate, while the film deposited on sapphire is virtually stress-free, and the film deposited on the FS substrate exhibits a tensile in-plane stress of σ ∼ 0.9 GPa. SPIS investigations revealed that the concentration of open-volume defects in the ZnO films is substantially higher than that in a bulk ZnO single crystal. Moreover, the ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit a significantly higher density of defects than the film deposited on the amorphous FS substrate. (paper)
Voltage transients in thin-film InSb Hall sensor
Directory of Open Access Journals (Sweden)
Alexey Bardin
Full Text Available The work is reached to study temperature transients in thin-film Hall sensors. We experimentally study InSb thin-film Hall sensor. We find transients of voltage with amplitude about 10 μV on the sensor ports after current switching. We demonstrate by direct measurements that the transients is caused by thermo-e.m.f., and both non-stationarity and heterogeneity of temperature in the film. We find significant asymmetry of temperature field for different direction of the current, which is probably related to Peltier effect. The result can be useful for wide range of scientist who works with switching of high density currents in any thin semiconductor films. 2000 MSC: 41A05, 41A10, 65D05, 65D17, Keywords: Thin-films, Semiconductors, Hall sensor, InSb, thermo-e.m.f.
Energy Technology Data Exchange (ETDEWEB)
Zhang, Song; Wang, Xu; Ma, Junli; Cui, Ruirui; Deng, Chaoyong, E-mail: cydeng@gzu.edu.cn
2015-11-15
Sandwich-type MgB{sub 2}/Boron/MgB{sub 2} Josephson junctions were fabricated using magnetron sputtering system. The rapid-anneal process was adopted to replace traditional way of annealing, trying to solve the problem of interdiffusion and oxidation with multilayer films. The boron film was used as barrier layer to avoid the introduction of impurities and improve reproducibility of the junctions. The bottom MgB{sub 2} thin films deposited on c-plane sapphire substrate exhibits a critical temperature T{sub C} of 37.5 K and critical current density J{sub C} at 5 K of 8.7 × 10{sup 6} A cm{sup −2}. From the XRD pattern, the bottom MgB{sub 2} thin film shows c-axis orientation, whereas the top MgB{sub 2} became polycrystalline as Boron barrier layer grown thicker. Therefore, all junction samples show lower T{sub C} than single MgB{sub 2} thin film. The junctions exhibit excellent quasiparticle characteristics with ideal dependence on temperature and Boron barrier thickness. Subharmonic gap structure was appeared in conductance characteristics, which was attributed to the multiple Andreev reflections (MAR). The result demonstrates great promise of this new fabrication technology for MgB{sub 2} Josephson junction fabrication. - Highlights: • Sandwich-type MgB{sub 2}/Boron/MgB{sub 2} Josephson junctions were fabricated. • The junctions were annealed after deposition with the rapid-anneal process. • The highest critical current is 25.3 mA at 5 K and remains non-zero near 25 K. • Subharmonic gap features can be observed in the dI/dV – V curves.
Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers
Best, James P.; Michler, Johann; Liu, Jianxi; Wang, Zhengbang; Tsotsalas, Manuel; Maeder, Xavier; Röse, Silvana; Oberst, Vanessa; Liu, Jinxuan; Walheim, Stefan; Gliemann, Hartmut; Weidler, Peter G.; Redel, Engelbert; Wöll, Christof
2015-09-01
Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (EITO ≈ 96.7 GPa, EHKUST-1 ≈ 22.0 GPa). For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices.
Diamagnetism to ferromagnetism in Sr-substituted epitaxial BaTiO{sub 3} thin films
Energy Technology Data Exchange (ETDEWEB)
Singamaneni, Srinivasa Rao, E-mail: ssingam@ncsu.edu; Prater, John T. [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States); Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Punugupati, Sandhyarani; Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)
2016-04-04
We report on the ferromagnetic-like behavior in otherwise diamagnetic BaTiO{sub 3} (BTO) thin films upon doping with non-magnetic element Sr having the composition Ba{sub 0.4}Sr{sub 0.6}TiO{sub 3} (BST). The epitaxial integration of BST (∼800 nm) thick films on Si (100) substrate was achieved using MgO (40 nm) and TiN (20 nm) as buffer layers to prepare BST/MgO/TiN/Si (100) heterostructure by pulsed laser deposition. The c-axis oriented and cube-on-cube epitaxial BST is formed on Si (100) as evidenced by the in-plane and out-of-plane X-ray diffraction. All the deposited films are relaxed through domain matching epitaxy paradigm as observed from X-ray diffraction pattern and A{sub 1}TO{sub 3} mode (at 521.27 cm{sup −1}) of Raman spectra. As-deposited BST thin films reveal ferromagnetic-like properties, which persist up to 400 K. The magnetization decreases two-fold upon oxygen annealing. In contrast, as-deposited un-doped BTO films show diamagnetism. Electron spin resonance measurements reveal no evidence of external magnetic impurities. XRD and X-ray photoelectron spectroscopy spectra show significant changes influenced by Sr doping in BTO. The ferromagnetic-like behavior in BST could be due to the trapped electron donors from oxygen vacancies resulting from Sr-doping.
Dynamic studies of nano-confined polymer thin films
Geng, Kun
Polymer thin films with the film thickness (h0 ) below 100 nm often exhibit physical properties different from the bulk counterparts. In order to make the best use of polymer thin films in applications, it is important to understand the physical origins of these deviations. In this dissertation, I will investigate how different factors influence dynamic properties of polymer thin films upon nano-confinement, including glass transition temperature (Tg), effective viscosity (etaeff) and self-diffusion coefficient (D ). The first part of this dissertation concerns the impacts of the molecular weight (MW) and tacticity on the Tg's of nano-confined polymer films. Previous experiments showed that the Tg of polymer films could be depressed or increased as h0 decreases. While these observations are usually attributed to the effects of the interfaces, some experiments suggested that MW's and tacticities might also play a role. To understand the effects of these factors, the Tg's of silica-based poly(alpha-methyl styrene) (PalphaMS/SiOx) and poly(methyl methacrylate) (PMMA/SiOx) thin films were studied, and the results suggested that MW's and tacticities influence Tg in nontrivial ways. The second part concerns an effort to resolve the long-standing controversy about the correlation between different dynamics of polymer thin films upon nano-confinement. Firstly, I discuss the experimental results of Tg, D and etaeff of poly(isobutyl methacrylate) films supported by silica (PiBMA/SiOx). Both T g and D were found to be independent of h 0, but etaeff decreased with decreasing h 0. Since both D and etaeff describe transport phenomena known to depend on the local friction coefficient or equivalently the local viscosity, it is questionable why D and etaeff displayed seemingly inconsistent h 0 dependencies. We envisage the different h0 dependencies to be caused by Tg, D and etaeff being different functions of the local T g's (Tg,i) or viscosities (eta i). By assuming a three
Mesoscale simulations of confined Nafion thin films
Vanya, P.; Sharman, J.; Elliott, J. A.
2017-12-01
The morphology and transport properties of thin films of the ionomer Nafion, with thicknesses on the order of the bulk cluster size, have been investigated as a model system to explain the anomalous behaviour of catalyst/electrode-polymer interfaces in membrane electrode assemblies. We have employed dissipative particle dynamics (DPD) to investigate the interaction of water and fluorocarbon chains, with carbon and quartz as confining materials, for a wide range of operational water contents and film thicknesses. We found confinement-induced clustering of water perpendicular to the thin film. Hydrophobic carbon forms a water depletion zone near the film interface, whereas hydrophilic quartz results in a zone with excess water. There are, on average, oscillating water-rich and fluorocarbon-rich regions, in agreement with experimental results from neutron reflectometry. Water diffusivity shows increasing directional anisotropy of up to 30% with decreasing film thickness, depending on the hydrophilicity of the confining material. A percolation analysis revealed significant differences in water clustering and connectivity with the confining material. These findings indicate the fundamentally different nature of ionomer thin films, compared to membranes, and suggest explanations for increased ionic resistances observed in the catalyst layer.
Compositional ratio effect on the surface characteristics of CuZn thin films
Choi, Ahrom; Park, Juyun; Kang, Yujin; Lee, Seokhee; Kang, Yong-Cheol
2018-05-01
CuZn thin films were fabricated by RF co-sputtering method on p-type Si(100) wafer with various RF powers applied on metallic Cu and Zn targets. This paper aimed to determine the morphological, chemical, and electrical properties of the deposited CuZn thin films by utilizing a surface profiler, atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), UV photoelectron spectroscopy (UPS), and a 4-point probe. The thickness of the thin films was fixed at 200 ± 8 nm and the roughness of the thin films containing Cu was smaller than pure Zn thin films. XRD studies confirmed that the preferred phase changed, and this tendency is dependent on the ratio of Cu to Zn. AES spectra indicate that the obtained thin films consisted of Cu and Zn. The high resolution XPS spectra indicate that as the content of Cu increased, the intensities of Zn2+ decreased. The work function of CuZn thin films increased from 4.87 to 5.36 eV. The conductivity of CuZn alloy thin films was higher than pure metallic thin films.
Fabrication and Film Qualification of Sr Modified Pb(Ca) TiO3 Thin Films
International Nuclear Information System (INIS)
Naw Hla Myat San; Khin Aye Thwe; Than Than Win; Yin Maung Maung; Ko Ko Kyaw Soe
2011-12-01
Strontium and calcium - modified lead titanate (Pb0.7 Ca0.15 Sr0.15 ) TiO3 (PCST)thin films were prepared by using spin coating technique. Phase transition of PCST was interpreted by means of Er-T characteristics. Process temperature dependence on micro-structure of PCST film was studied. Charge conduction mechanism of PCST thin film was also investigated for film qualification.
International Nuclear Information System (INIS)
Wang Wenhong; Sukegawa, Hiroaki; Shan Rong; Furubayashi, Takao; Inomata, Koichiro
2008-01-01
We report the investigation of structure and magnetic properties of full-Heusler alloy Co 2 FeAl 0.5 Si 0.5 (CFAS) thin films grown on MgO-buffered MgO (001) substrates through magnetron sputtering. It was found that single-crystal CFAS thin films with high degree of L2 1 ordering and sufficiently flat surface could be obtained after postdeposition annealing. All the films show a distinct uniaxial magnetic anisotropy with the easy axis of magnetization along the in-plane [110] direction. These results indicate that the use of the MgO buffer for CFAS is a promising approach for achieving a higher tunnel magnetoresistance ratio, and thus for spintronics device applications
Thermal properties and stabilities of polymer thin films
International Nuclear Information System (INIS)
Kanaya, Toshiji; Kawashima, Kazuko; Inoue, Rintaro; Miyazaki, Tsukasa
2009-01-01
Recent extensive studies have revealed that polymer thin films showed very interesting but unusual thermal properties and stabilities. In the article we show that X-ray reflectivity and neutron reflectivity are very powerful tools to study the anomalous properties of polymer thin films. (author)
Liquid crystals for organic thin-film transistors
Iino, Hiroaki; Usui, Takayuki; Hanna, Jun-Ichi
2015-04-01
Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. Here we report that liquid crystalline materials exhibiting a highly ordered liquid crystal phase of smectic E (SmE) can solve both these problems. We design a SmE liquid crystalline material, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), for FETs and synthesize it. This material provides uniform and molecularly flat polycrystalline thin films reproducibly when SmE precursor thin films are crystallized, and also exhibits high durability of films up to 200 °C. In addition, the mobility of FETs is dramatically enhanced by about one order of magnitude (over 10 cm2 V-1 s-1) after thermal annealing at 120 °C in bottom-gate-bottom-contact FETs. We anticipate the use of SmE liquid crystals in solution-processed FETs may help overcome upcoming difficulties with novel technologies for printed electronics.
Aluminosilicate glass thin films elaborated by pulsed laser deposition
Energy Technology Data Exchange (ETDEWEB)
Carlier, Thibault [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France); Saitzek, Sébastien [Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et de Chimie du Solide (UCCS), F-62300 Lens (France); Méar, François O., E-mail: francois.mear@univ-lille1.fr [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France); Blach, Jean-François; Ferri, Anthony [Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et de Chimie du Solide (UCCS), F-62300 Lens (France); Huvé, Marielle; Montagne, Lionel [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France)
2017-03-01
Highlights: • Successfully deposition of a glassy thin film by PLD. • A good homogeneity and stoichiometry of the coating. • Influence of the deposition temperature on the glassy thin-film structure. - Abstract: In the present work, we report the elaboration of aluminosilicate glass thin films by Pulsed Laser Deposition at various temperatures deposition. The amorphous nature of glass thin films was highlighted by Grazing Incidence X-Ray Diffraction and no nanocristallites were observed in the glassy matrix. Chemical analysis, obtained with X-ray Photoelectron Spectroscopy and Time of Flight Secondary Ion Mass Spectroscopy, showed a good transfer and homogeneous elementary distribution with of chemical species from the target to the film a. Structural studies performed by Infrared Spectroscopy showed that the substrate temperature plays an important role on the bonding configuration of the layers. A slight shift of Si-O modes to larger wavenumber was observed with the synthesis temperature, assigned to a more strained sub-oxide network. Finally, optical properties of thins film measured by Spectroscopic Ellipsometry are similar to those of the bulk aluminosilicate glass, which indicate a good deposition of aluminosilicate bulk glass.
Research progress of VO2 thin film as laser protecting material
Liu, Zhiwei; Lu, Yuan; Hou, Dianxin
2018-03-01
With the development of laser technology, the battlefield threat of directional laser weapons is becoming more and more serious. The blinding and destruction caused by laser weapons on the photoelectric equipment is an important part of the current photo-electronic warfare. The research on the defense technology of directional laser weapons based on the phase transition characteristics of VO2 thin films is an important subject. The researches of VO2 thin films are summarized based on review these points: the preparation methods of VO2 thin films, phase transition mechanism, phase transition temperature regulating, interaction between VO2 thin films and laser, and the application prospect of vo2 thin film as laser protecting material. This paper has some guiding significance for further research on the VO2 thin films in the field of defense directional laser weapons.
Cellulose triacetate, thin film dielectric capacitor
Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)
1995-01-01
Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.
International Nuclear Information System (INIS)
Miyahara, Hiroshi; Yoshida, Makoto; Watanabe, Tamaki
1977-01-01
The α-ray thickness gauge is used to measure non-destructively the thicknesses of thin films, and up to the present day, a thin film with uniform thickness is only taken up as the object of α-ray thickness gauge. When the thickness is determined from the displacement between the absorption curves in the presence and absence of thin film, the absorption curve must be displaced in parallel. When many uniform particles were dispersed as sample, the shape of the absorption curve was calculated as the sum of many absorption curves corresponding to the thin films with different thicknesses. By the comparison of the calculated and measured absorption curves, the number of particles, or the mean superficial density can be determined. This means the extension of thickness measurement from uniform to non-uniform films. Furthermore, these particle models being applied to non-uniform thin film, the possibility of measuring the mean thickness and non-uniformity was discussed. As the result, if the maximum difference of the thickness was more than 0.2 mg/cm 2 , the nonuniformity was considered to distinguish by the usual equipment. In this paper, an α-ray thickness gauge using the absorption curve method was treated, but one can apply this easily to an α-ray thickness gauge using α-ray energy spectra before and after the penetration of thin film. (auth.)
Processing and characterisation of II–VI ZnCdMgSe thin film gain structures
Energy Technology Data Exchange (ETDEWEB)
Jones, Brynmor E., E-mail: brynmor.jones@strath.ac.uk [Institute of Photonics, Department of Physics, University of Strathclyde, Technology and Innovation Centre, Level 5, 99 George Street, Glasgow G1 1RD (United Kingdom); Schlosser, Peter J. [Institute of Photonics, Department of Physics, University of Strathclyde, Technology and Innovation Centre, Level 5, 99 George Street, Glasgow G1 1RD (United Kingdom); De Jesus, Joel [Department of Physics, The Graduate Center and The City College of New York, 138th Street and Convent Avenue, New York, NY 10031 (United States); Garcia, Thor A.; Tamargo, Maria C. [Department of Chemistry, The Graduate Center and The City College of New York, 138th Street and Convent Avenue, New York, NY 10031 (United States); Hastie, Jennifer E. [Institute of Photonics, Department of Physics, University of Strathclyde, Technology and Innovation Centre, Level 5, 99 George Street, Glasgow G1 1RD (United Kingdom)
2015-09-01
Lattice-matched II–VI selenide quantum well (QW) structures grown on InP substrates can be designed for emission throughout the visible spectrum. InP has, however, strong visible-light absorption, so that a method for epitaxial lift-off and transfer to transparent substrates is desirable for vertically-integrated devices. We have designed and grown, via molecular beam epitaxy, ZnCdSe/ZnCdMgSe multi-QW gain regions for vertical emission, with the QWs positioned for resonant periodic gain. The release of the 2.7 μm-thick ZnCdSe/ZnCdMgSe multi-QW film is achieved via selective wet etching of the substrate and buffer layers leaving only the epitaxial layers, which are subsequently transferred to transparent substrates, including glass and thermally-conductive diamond. Post-transfer properties are investigated, with power and temperature-dependent surface- and edge-emitting photoluminescence measurements demonstrating no observable strain relaxation effects or significant shift in comparison to unprocessed samples. The temperature dependent QW emission shift is found experimentally to be 0.13 nm/K. Samples capillary-bonded epitaxial-side to glass exhibited a 6 nm redshift under optical pumping of up to 35 mW at 405 nm, corresponding to a 46 K temperature increase in the pumped region; whereas those bonded to diamond exhibited no shift in QW emission, and thus efficient transfer of the heat from the pumped region. Atomic force microscopy analysis of the etched surface reveals a root-mean-square roughness of 3.6 nm. High quality optical interfaces are required to establish a good thermal and optical contact for high power optically pumped laser applications. - Highlights: • ZnCdSe/ZnCdMgSe II–VI multi-quantum well active regions are grown on InP. • Free-standing, II–VI films removed from InP substrate and InGaAs via wet etching • Negligible change of the quantum well photoluminescence after substrate removal • II–VI film transferred to diamond shows good
Tellier, CR; Siddall, G
1982-01-01
A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.
Magnetostrictive thin films prepared by RF sputtering
International Nuclear Information System (INIS)
Carabias, I.; Martinez, A.; Garcia, M.A.; Pina, E.; Gonzalez, J.M.; Hernando, A.; Crespo, P.
2005-01-01
Fe 80 B 20 thin films have been prepared by ion beam sputtering magnetron on room temperature. The films were fabricated on different substrates to compare the different magnetic and structural properties. In particular the growth of films on flexible substrates (PDMS, Kapton) has been studied to allow a simple integration of the system in miniaturized magnetostrictive devices. X-ray diffraction patterns indicate that films are mainly amorphous although the presence of some Fe nanoparticles cannot be ruled out. The coercive field of thin films ranges between 15 and 35 Oe, depending on substrate. Magnetostriction measurements indicate the strong dependence of the saturation magnetostriction with the substrate. Samples on flexible substrates exhibit a better performance than samples deposited onto glass substrates
Film-thickness dependence of structure formation in ultra-thin polymer blend films
Gutmann, J S; Stamm, M
2002-01-01
We investigated the film-thickness dependence of structure formation in ultra-thin polymer blend films prepared from solution. As a model system we used binary blends of statistical poly(styrene-co-p-bromostyrene) copolymers of different degrees of bromination. Ultra-thin-film samples differing in miscibility and film thickness were prepared via spin coating of common toluene solutions onto silicon (100) substrates. The resulting morphologies were investigated with scanning force microscopy, reflectometry and grazing-incidence scattering techniques using both X-rays and neutrons in order to obtain a picture of the sample structure at and below the sample surface. (orig.)
Visualizing Nanoscopic Topography and Patterns in Freely Standing Thin Films
Yilixiati, Subinuer; Zhang, Yiran; Pearsall, Collin; Sharma, Vivek
Thin liquid films containing micelles, nanoparticles, polyelectrolyte-surfactant complexes and smectic liquid crystals undergo thinning in a discontinuous, step-wise fashion. The discontinuous jumps in thickness are often characterized by quantifying changes in the intensity of reflected monochromatic light, modulated by thin film interference from a region of interest. Stratifying thin films exhibit a mosaic pattern in reflected white light microscopy, attributed to the coexistence of domains with various thicknesses, separated by steps. Using Interferometry Digital Imaging Optical Microscopy (IDIOM) protocols developed in the course of this study, we spatially resolve for the first time, the landscape of stratifying freestanding thin films. In particular, for thin films containing micelles of sodium dodecyl sulfate (SDS), discontinuous, thickness transitions with concentration-dependent steps of 5-25 nm are visualized and analyzed using IDIOM protocols. We distinguish nanoscopic rims, mesas and craters and show that the non-flat features are sculpted by oscillatory, periodic, supramolecular structural forces that arise in confined fluids
Polarized Neutron Reflectivity Simulation of Ferromagnet/ Antiferromagnet Thin Films
Energy Technology Data Exchange (ETDEWEB)
Kim, Ki Yeon; Lee, Jeong Soo
2008-02-15
This report investigates the current simulating and fitting programs capable of calculating the polarized neutron reflectivity of the exchange-biased ferromagnet/antiferromagnet magnetic thin films. The adequate programs are selected depending on whether nonspin flip and spin flip reflectivities of magnetic thin films and good user interface are available or not. The exchange-biased systems such as Fe/Cr, Co/CoO, CoFe/IrMn/Py thin films have been simulated successfully with selected programs.
International Nuclear Information System (INIS)
Lai Yiuwai; Hofmann, Martin R; Ludwig, Alfred; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios
2011-01-01
A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.
Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred
2011-10-01
A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.
Ultra-thin zirconia films on Zr-alloys
Energy Technology Data Exchange (ETDEWEB)
Choi, Joong Il Jake; Mayr-Schmoelzer, Wernfried; Mittendorfer, Florian; Redinger, Josef; Diebold, Ulrike; Schmid, Michael [Institute of Applied Physics, Vienna University of Technology (Austria); Li, Hao; Rupprechter, Guenther [Institute of Materials Chemistry, Vienna University of Technology (Austria)
2014-07-01
Zirconia ultra-thin films have been prepared by oxidation of Pt{sub 3}Zr(0001) and showed a structure equivalent to (111) of cubic zirconia. Following previous work, we have prepared ultra-thin zirconia by oxidation of a different alloy, Pd{sub 3}Zr(0001), which resulted in a similar structure with a slightly different lattice parameter, 351.2 ±0.4 pm. Unlike the oxide on Pt{sub 3}Zr, where Zr of the oxide binds to Pt in the substrate, here the oxide binds to substrate Zr via oxygen. This causes stronger distortion of the oxide structure, i.e. a stronger buckling of Zr in the oxide. After additional oxidation of ZrO{sub 2}/Pt{sub 3}Zr, a different ultra-thin zirconia phase is observed. A preliminary structure model for this film is based on (113)-oriented cubic zirconia. 3D oxide clusters are also present after growing ultra-thin zirconia films. They occur at the step edges, and the density is higher on Pd{sub 3}Zr. These clusters also appear on terraces after additional oxidation. XPS reveals different core level shifts of the oxide films, bulk, and oxide clusters.
Highly coercive thin-film nanostructures
International Nuclear Information System (INIS)
Zhou, J.; Skomski, R.; Kashyap, A.; Sorge, K.D.; Sui, Y.; Daniil, M.; Gao, L.; Yan, M.L.; Liou, S.-H.; Kirby, R.D.; Sellmyer, D.J.
2005-01-01
The processing, structure, and magnetism of highly coercive Sm-Co and FePt thin-film nanostructures are investigated. The structures include 1:5 based Sm-Co-Cu-Ti magnets, particulate FePt:C thin films, and FePt nanotubes. As in other systems, the coercivity depends on texture and imperfections, but there are some additional features. A specific coercivity mechanism in particulate media is a discrete pinning mode intermediate between Stoner-Wohlfarth rotation and ordinary domain-wall pinning. This mechanism yields a coercivity maximum for intermediate intergranular exchange and explains the occurrence of coercivities of 5 T in particulate Sm-Co-Cu-Ti magnets
Structural characterization of vacuum evaporated ZnSe thin films
Indian Academy of Sciences (India)
The lattice parameter, grain size, average internal stress, microstrain, dislocation density and degree of pre- ferred orientation in the film are calculated and correlated with Ts. Keywords. ZnSe thin films; X-ray diffraction; average internal stress; microstrain; dislocation density. 1. Introduction. Thin films of ZnSe has attracted ...
Investigation of ferromagnetism in oxygen deficient hafnium oxide thin films
Energy Technology Data Exchange (ETDEWEB)
Hildebrandt, Erwin; Kurian, Jose; Krockenberger, Yoshiharu; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Suter, Andreas [PSI, Villingen (Switzerland); Wilhelm, Fabrice; Rogalev, Andrei [ESRF, Grenoble (France)
2008-07-01
Oxygen deficient thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. RF-activated oxygen was used for the in situ oxidation of hafnium oxide thin films. Oxidation conditions were varied substantially in order to create oxygen deficiency in hafnium oxide films intentionally. The films were characterized by X-ray and magnetic measurements. X-ray diffraction studies show an increase in lattice parameter with increasing oxygen deficiency. Oxygen deficient hafnium oxide thin films also showed a decreasing bandgap with increase in oxygen deficiency. The magnetisation studies carried out with SQUID did not show any sign of ferromagnetism in the whole oxygen deficiency range. X-ray magnetic circular dichroism measurements also confirmed the absence of ferromagnetism in oxygen deficient hafnium oxide thin films.
Hanis Tajuddin, Muhammad; Yusof, Norhaniza; Salleh, Wan Norharyati Wan; Fauzi Ismail, Ahmad; Hanis Hayati Hairom, Nur; Misdan, Nurasyikin
2018-03-01
Thin film nanocomposite (TFN) membrane with copper-aluminium layered double hydroxides (LDH) incorporated into polyamide (PA) selective layer has been prepared for magnesium sulphate salt removal. 0, 0.05, 0.1, 0.15, 0.2 wt% of LDH were dispersed in the trimesoyl chloride (TMC) in n-hexane as organic solution and embedded into PA layer during interfacial polymerization with piperazine. The fabricated membranes were further characterized to evaluate its morphological structure and membrane surface hydrophilicity. The TFN membranes performance were evaluated with divalent salt magnesium sulphate (MgSO4) removal and compared with thin film composite (TFC). The morphological structures of TFN membranes were altered and the surface hydrophilicity were enhanced with addition of LDH. Incorporation of LDH has improved the permeate water flux by 82.5% compared to that of TFC membrane with satisfactory rejection of MgSO4. This study has experimentally validated the potential of LDH to improve the divalent salt separation performance for TFN membranes.
Directory of Open Access Journals (Sweden)
Tajuddin Muhammad Hanis
2018-01-01
Full Text Available Thin film nanocomposite (TFN membrane with copper-aluminium layered double hydroxides (LDH incorporated into polyamide (PA selective layer has been prepared for magnesium sulphate salt removal. 0, 0.05, 0.1, 0.15, 0.2 wt% of LDH were dispersed in the trimesoyl chloride (TMC in n-hexane as organic solution and embedded into PA layer during interfacial polymerization with piperazine. The fabricated membranes were further characterized to evaluate its morphological structure and membrane surface hydrophilicity. The TFN membranes performance were evaluated with divalent salt magnesium sulphate (MgSO4 removal and compared with thin film composite (TFC. The morphological structures of TFN membranes were altered and the surface hydrophilicity were enhanced with addition of LDH. Incorporation of LDH has improved the permeate water flux by 82.5% compared to that of TFC membrane with satisfactory rejection of MgSO4. This study has experimentally validated the potential of LDH to improve the divalent salt separation performance for TFN membranes.
Porous Zinc Oxide Thin Films: Synthesis Approaches and Applications
Directory of Open Access Journals (Sweden)
Marco Laurenti
2018-02-01
Full Text Available Zinc oxide (ZnO thin films have been widely investigated due to their multifunctional properties, i.e., catalytic, semiconducting and optical. They have found practical use in a wide number of application fields. However, the presence of a compact micro/nanostructure has often limited the resulting material properties. Moreover, with the advent of low-dimensional ZnO nanostructures featuring unique physical and chemical properties, the interest in studying ZnO thin films diminished more and more. Therefore, the possibility to combine at the same time the advantages of thin-film based synthesis technologies together with a high surface area and a porous structure might represent a powerful solution to prepare ZnO thin films with unprecedented physical and chemical characteristics that may find use in novel application fields. Within this scope, this review offers an overview on the most successful synthesis methods that are able to produce ZnO thin films with both framework and textural porosities. Moreover, we discuss the related applications, mainly focused on photocatalytic degradation of dyes, gas sensor fabrication and photoanodes for dye-sensitized solar cells.
The Characterization of Thin Film Nickel Titanium Shape Memory Alloys
Harris Odum, Nicole Latrice
Shape memory alloys (SMA) are able to recover their original shape through the appropriate heat or stress exposure after enduring mechanical deformation at a low temperature. Numerous alloy systems have been discovered which produce this unique feature like TiNb, AgCd, NiAl, NiTi, and CuZnAl. Since their discovery, bulk scale SMAs have undergone extensive material property investigations and are employed in real world applications. However, its thin film counterparts have been modestly investigated and applied. Researchers have introduced numerous theoretical microelectromechanical system (MEMS) devices; yet, the research community's overall unfamiliarity with the thin film properties has delayed growth in this area. In addition, it has been difficult to outline efficient thin film processing techniques. In this dissertation, NiTi thin film processing and characterization techniques will be outlined and discussed. NiTi thin films---1 mum thick---were produced using sputter deposition techniques. Substrate bound thin films were deposited to analysis the surface using Scanning Electron Microscopy; the film composition was obtained using Energy Dispersive Spectroscopy; the phases were identified using X-ray diffraction; and the transformation temperatures acquired using resistivity testing. Microfabrication processing and sputter deposition were employed to develop tensile membranes for membrane deflection experimentation to gain insight on the mechanical properties of the thin films. The incorporation of these findings will aid in the movement of SMA microactuation devices from theory to fruition and greatly benefit industries such as medicinal and aeronautical.
Evaluation of residual stress in sputtered tantalum thin-film
Energy Technology Data Exchange (ETDEWEB)
Al-masha’al, Asa’ad, E-mail: asaad.al@ed.ac.uk; Bunting, Andrew; Cheung, Rebecca
2016-05-15
Highlights: • Tantalum thin-films have been deposited by DC magnetron sputtering system. • Thin-film stress is observed to be strongly influenced by sputtering pressure. • Transition towards the compressive stress is ascribed to the annealing at 300 °C. • Expose thin-film to air ambient or ion bombardment lead to a noticeable change in the residual stress. - Abstract: The influence of deposition conditions on the residual stress of sputtered tantalum thin-film has been evaluated in the present study. Films have been deposited by DC magnetron sputtering and curvature measurement method has been employed to calculate the residual stress of the films. Transitions of tantalum film stress from compressive to tensile state have been observed as the sputtering pressure increases. Also, the effect of annealing process at temperature range of 90–300 °C in oxygen ambient on the residual stress of the films has been studied. The results demonstrate that the residual stress of the films that have been deposited at lower sputtering pressure has become more compressive when annealed at 300 °C. Furthermore, the impact of exposure to atmospheric ambient on the tantalum film stress has been investigated by monitoring the variation of the residual stress of both annealed and unannealed films over time. The as-deposited films have been exposed to pure Argon energy bombardment and as result, a high compressive stress has been developed in the films.
Optical and electrical properties of chemical bath deposited cobalt sulphide thin films
Energy Technology Data Exchange (ETDEWEB)
Govindasamy, Geetha [R& D Centre, Bharathiar University, Coimbatore (India); Murugasen, Priya, E-mail: priyamurugasen15@gmail.com [Department of Physics, Saveetha Engineering, Chennai, Tamil Nadu (India); Sagadevan, Suresh [Department of Physics, AMET University, Chennai, Tamil Nadu (India)
2017-01-15
Cobalt sulphide (CoS) thin films were synthesized using the Chemical Bath Deposition (CBD) technique. X-ray diffraction (XRD) analysis was used to study the structure and the crystallite size of CoS thin film. Scanning Electron Microscope (SEM) studies reveal the surface morphology of these films. The optical properties of the CoS thin films were determined using UV-Visible absorption spectrum. The optical band gap of the thin films was found to be 1.6 eV. Optical constants such as the refractive index, the extinction coefficient and the electric susceptibility were determined. The dielectric studies were carried out at different frequencies and at different temperatures for the prepared CoS thin films. In addition, the plasma energy of the valence electron, Penn gap or average energy gap, the Fermi energy and electronic polarizability of the thin films were determined. The AC electrical conductivity measurement was also carried out for the thin films. The activation energy was determined by using DC electrical conductivity measurement. (author)
Electrochemical Deposition of Lanthanum Telluride Thin Films and Nanowires
Chi, Su (Ike); Farias, Stephen; Cammarata, Robert
2013-03-01
Tellurium alloys are characterized by their high performance thermoelectric properties and recent research has shown nanostructured tellurium alloys display even greater performance than bulk equivalents. Increased thermoelectric efficiency of nanostructured materials have led to significant interests in developing thin film and nanowire structures. Here, we report on the first successful electrodeposition of lanthanum telluride thin films and nanowires. The electrodeposition of lanthanum telluride thin films is performed in ionic liquids at room temperature. The synthesis of nanowires involves electrodepositing lanthanum telluride arrays into anodic aluminum oxide (AAO) nanoporous membranes. These novel procedures can serve as an alternative means of simple, inexpensive and laboratory-environment friendly methods to synthesize nanostructured thermoelectric materials. The thermoelectric properties of thin films and nanowires will be presented to compare to current state-of-the-art thermoelectric materials. The morphologies and chemical compositions of the deposited films and nanowires are characterized using SEM and EDAX analysis.
International Nuclear Information System (INIS)
Keller, Stephan; Blagoi, Gabriela; Lillemose, Michael; Haefliger, Daniel; Boisen, Anja
2008-01-01
This paper summarizes the results of the process optimization for SU-8 films with thicknesses ≤5 µm. The influence of soft-bake conditions, exposure dose and post-exposure-bake parameters on residual film stress, structural stability and lithographic resolution was investigated. Conventionally, the SU-8 is soft-baked after spin coating to remove the solvent. After the exposure, a post-exposure bake at a high temperature T PEB ≥ 90 °C is required to cross-link the resist. However, for thin SU-8 films this often results in cracking or delamination due to residual film stress. The approach of the process optimization is to keep a considerable amount of the solvent in the SU-8 before exposure to facilitate photo-acid diffusion and to increase the mobility of the monomers. The experiments demonstrate that a replacement of the soft-bake by a short solvent evaporation time at ambient temperature allows cross-linking of the thin SU-8 films even at a low T PEB = 50 °C. Fourier-transform infrared spectroscopy is used to confirm the increased cross-linking density. The low thermal stress due to the reduced T PEB and the improved structural stability result in crack-free structures and solve the issue of delamination. The knowledge of the influence of different processing parameters on the responses allows the design of optimized processes for thin SU-8 films depending on the specific application
Growth of superconducting MgB2 films by pulsed-laser deposition using a Nd-YAG laser
International Nuclear Information System (INIS)
Badica, P; Togano, K; Awaji, S; Watanabe, K
2006-01-01
Thin films of MgB 2 on r-cut Al 2 O 3 substrates have been grown by pulsed-laser deposition (PLD) using a Nd-YAG laser (fourth harmonic-266 nm) instead of the popular KrF excimer laser. The growth window to obtain superconducting films is laser energy 350-450 mJ and vacuum pressure with Ar-buffer gas of 1-8/10 Pa (initial background vacuum 0.5-1 x 10 -3 Pa). Films were deposited at room temperature and post-annealed in situ and ex situ at temperatures of 500-780 0 C and up to 1 h. Films are randomly oriented with maximum critical temperature (offset of resistive transition) of 27 K. SEM/TEM/EDS investigations show that they are mainly composed of small sphere-like particles (≤20 nm), and contain oxygen and some carbon, uniformly distributed in the flat matrix, but the amount of Mg and/or oxygen is higher in the aggregates-droplets (100-1000 nm) observed on the surface of the film's matrix. Some aspects of the processing control and dependences on film characteristics are discussed. The technique is promising for future development of coated conductors
Altering properties of cerium oxide thin films by Rh doping
International Nuclear Information System (INIS)
Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír
2015-01-01
Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO x thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO x thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce 4+ and Ce 3+ and rhodium occurs in two oxidation states, Rh 3+ and Rh n+ . We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO x thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO x thin films leads to preparing materials with different properties
Magnon dispersion in thin magnetic films
International Nuclear Information System (INIS)
Balashov, T; Wulfhekel, W; Buczek, P; Sandratskii, L; Ernst, A
2014-01-01
Although the dispersion of magnons has been measured in many bulk materials, few studies deal with the changes in the dispersion when the material is in the form of a thin film, a system that is of interest for applications. Here we review inelastic tunneling spectroscopy studies of magnon dispersion in Mn/Cu 3 Au(1 0 0) and present new studies on Co and Ni thin films on Cu(1 0 0). The dispersion in Mn and Co films closely follows the dispersion of bulk samples with negligible dependence on thickness. The lifetime of magnons depends slightly on film thickness, and decreases considerably as the magnon energy increases. In Ni/Cu(1 0 0) films the thickness dependence of dispersion is much more pronounced. The measurements indicate a considerable mode softening for thinner films. Magnon lifetimes decrease dramatically near the edge of the Brillouin zone due to a close proximity of the Stoner continuum. The experimental study is supported by first-principles calculations. (paper)
Magnon dispersion in thin magnetic films.
Balashov, T; Buczek, P; Sandratskii, L; Ernst, A; Wulfhekel, W
2014-10-01
Although the dispersion of magnons has been measured in many bulk materials, few studies deal with the changes in the dispersion when the material is in the form of a thin film, a system that is of interest for applications. Here we review inelastic tunneling spectroscopy studies of magnon dispersion in Mn/Cu3Au(1 0 0) and present new studies on Co and Ni thin films on Cu(1 0 0). The dispersion in Mn and Co films closely follows the dispersion of bulk samples with negligible dependence on thickness. The lifetime of magnons depends slightly on film thickness, and decreases considerably as the magnon energy increases. In Ni/Cu(1 0 0) films the thickness dependence of dispersion is much more pronounced. The measurements indicate a considerable mode softening for thinner films. Magnon lifetimes decrease dramatically near the edge of the Brillouin zone due to a close proximity of the Stoner continuum. The experimental study is supported by first-principles calculations.
Thin film description by wavelet coefficients statistics
Czech Academy of Sciences Publication Activity Database
Boldyš, Jiří; Hrach, R.
2005-01-01
Roč. 55, č. 1 (2005), s. 55-64 ISSN 0011-4626 Grant - others:GA UK(CZ) 173/2003 Institutional research plan: CEZ:AV0Z10750506 Keywords : thin films * wavelet transform * descriptors * histogram model Subject RIV: BD - Theory of Information Impact factor: 0.360, year: 2005 http://library.utia.cas.cz/separaty/2009/ZOI/boldys-thin film description by wavelet coefficients statistics .pdf
In and Ga Codoped ZnO Film as a Front Electrode for Thin Film Silicon Solar Cells
Directory of Open Access Journals (Sweden)
Duy Phong Pham
2014-01-01
Full Text Available Doped ZnO thin films have attracted much attention in the research community as front-contact transparent conducting electrodes in thin film silicon solar cells. The prerequisite in both low resistivity and high transmittance in visible and near-infrared region for hydrogenated microcrystalline or amorphous/microcrystalline tandem thin film silicon solar cells has promoted further improvements of this material. In this work, we propose the combination of major Ga and minor In impurities codoped in ZnO film (IGZO to improve the film optoelectronic properties. A wide range of Ga and In contents in sputtering targets was explored to find optimum optical and electrical properties of deposited films. The results show that an appropriate combination of In and Ga atoms in ZnO material, followed by in-air thermal annealing process, can enhance the crystallization, conductivity, and transmittance of IGZO thin films, which can be well used as front-contact electrodes in thin film silicon solar cells.
Large Area Thin Film Silicon: Synergy between Displays and Solar Cells
Schropp, R.E.I.
2012-01-01
Thin-film silicon technology has changed our society, owing to the rapid advance of its two major application fields in communication (thin-film displays) and sustainable energy (thin-film solar cells). Throughout its development, advances in these application fields have always benefitted each
Cell adhesion to cathodic arc plasma deposited CrAlSiN thin films
Energy Technology Data Exchange (ETDEWEB)
Kim, Sun Kyu, E-mail: skim@ulsan.ac.kr [School of Materials Science and Engineering, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Pham, Vuong-Hung [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Kim, Chong-Hyun [Department of Food Science, Cornell University, Ithaca, NY 14853 (United States)
2012-07-01
Osteoblast cell response (cell adhesion, actin cytoskeleton and focal contact adhesion as well as cell proliferation) to CrN, CrAlSiN and Ti thin films was evaluated in vitro. Cell adhesion and actin stress fibers organization depended on the film composition significantly. Immunofluorescent staining of vinculin in osteoblast cells showed good focal contact adhesion on the CrAlSiN and Ti thin films but not on the CrN thin films. Cell proliferation was significantly greater on the CrAlSiN thin films as well as on Ti thin films than on the CrN thin films.
Y1Ba2Cu3O(7-delta) thin film dc SQUIDs (superconducting quantum interference device)
Racah, Daniel
1991-03-01
Direct current superconducting quantum interferometers (SQUIDs) based on HTSC thin films have been measured and characterized. The thin films used were of different quality: (1) Granular films on Sapphire substrates, prepared either by e-gun evaporation, by laser ablation or by MOCVD (metal oxide chemical vapor deposition), (2) Epitaxial films on MgO substrates. Modulations of the voltage on the SQUIDs as a function of the applied flux have been observed in a wide range of temperatures. The nature of the modulation was found to be strongly dependent on the morphology of the film and on its critical current. The SQUIDs based on granular films were relatively noisy, hysteretic and with a complicated V-phi shape. Those devices based on low quality (lowIc) granular films could be measured only at low temperatures (much lower than 77 K). While those of higher quality (granular films with high Ic) could be measured near to the superconductive transition. The SQUID based on high quality epitaxial film was measured near Tc and showed an anomalous, time dependent behavior.
Energy Technology Data Exchange (ETDEWEB)
Frei, R.; Meier, Ch.
2005-07-01
This final report for the Swiss Federal Office of Energy (SFOE) presents the results of a comparison made between six types of thin-film, building-integrated photovoltaic (BIPV) technologies used in three different modes of building-integration. More than 450 thin-film modules including amorphous silicon and CIS technologies were monitored. Each type of module was installed in three different modes: inclined (20{sup o}), flat with free back air flow, and flat with thermal back insulation. The performance of these commercially available thin-film BIPV systems was monitored using an extensive monitoring program. Additionally, three mono-crystalline PV arrays allowed direct comparison of the technologies. The results of the monitoring work are presented and further work to be done is discussed, including the monitoring of possible long-term degradation.
Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film
Sarkar, Suman; Kundu, Sarathi
2018-04-01
Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.
Flexible thin film magnetoimpedance sensors
International Nuclear Information System (INIS)
Kurlyandskaya, G.V.; Fernández, E.; Svalov, A.; Burgoa Beitia, A.; García-Arribas, A.; Larrañaga, A.
2016-01-01
Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti] 3 /Cu/[FeNi/Ti] 3 films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.
Flexible thin film magnetoimpedance sensors
Energy Technology Data Exchange (ETDEWEB)
Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)
2016-10-01
Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.
Optimized grid design for thin film solar panels
Deelen, J. van; Klerk, L.; Barink, M.
2014-01-01
There is a gap in efficiency between record thin film cells and mass produced thin film solar panels. In this paper we quantify the effect of monolithic integration on power output for various configurations by modeling and present metallization as a way to improve efficiency of solar panels. Grid
Thermal stability of gold-PS nanocomposites thin films
Indian Academy of Sciences (India)
Low-temperature transmission electron microscopy (TEM) studies were performed on polystyrene (PS, w = 234 K) – Au nanoparticle composite thin films that were annealed up to 350°C under reduced pressure conditions. The composite thin films were prepared by wet chemical approach and the samples were then ...
Begley, Carolyn; Simpson, Trefford; Liu, Haixia; Salvo, Eliza; Wu, Ziwei; Bradley, Arthur; Situ, Ping
2013-04-12
The purpose of this study was to test the association between tear film fluorescence changes during tear break-up (TBU) or thinning and the concurrent ocular sensory response. Sixteen subjects kept one eye open as long as possible (MBI), indicated their discomfort level continuously, and rated ocular sensations of irritation, stinging, burning, pricking, and cooling using visual analog scales (VAS). Fluorescence of the tear film was quantified by a pixel-based analysis of the median pixel intensity (PI), TBU, and percentage of dark pixels (DarkPix) over time. A cutoff of 5% TBU was used to divide subjects into either break-up (BU) or minimal break-up (BUmin) groups. Tear film fluorescence decreased (median PI) and the percentage of TBU and DarkPix increased in all trials, with the rate significantly greater in the BU than the BUmin group (Mann-Whitney U test, P film thinning best explains decreasing tear film fluorescence during trials. This was highly correlated with increasing ocular discomfort, suggesting that both tear film thinning and TBU stimulate underlying corneal nerves, although TBU produced more rapid stimulation. Slow increases in tear film hyperosmolarity may cause the gradual increase in discomfort during slow tear film thinning, whereas the sharp increases in discomfort during TBU suggest a more complex stimulus.
Thin films for the manipulation of light
International Nuclear Information System (INIS)
Piegari, Angela; Sytchkova, Anna
2015-01-01
The manipulation of light is typically accomplished by a series of optical surfaces on which the incident beam is reflected, or through which the beam is transmitted. Thin film coatings help to modify the behavior of such surfaces for obtaining the desired result: antireflection coatings to reduce reflection losses, high-reflectance mirrors, filters to divide or combine beams of different wavelengths, and many other types. The amount of light that is transmitted or reflected depends on the optical parameters of the materials and on interference phenomena in thin-film structures. Dedicated software is available to design the proper coating for each requirement. There are several applications of optical thin films, many of them are useful in the everyday life, many others are dedicated to scientific purposes, as will be described in this paper [it
Unidirectional oxide hetero-interface thin-film diode
International Nuclear Information System (INIS)
Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang
2015-01-01
The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10 5 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10 2 Hz < f < 10 6 Hz, providing a high feasibility for practical applications
Unidirectional oxide hetero-interface thin-film diode
Energy Technology Data Exchange (ETDEWEB)
Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)
2015-10-05
The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.
Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers
Energy Technology Data Exchange (ETDEWEB)
Best, James P., E-mail: james.best@empa.ch, E-mail: engelbert.redel@kit.edu, E-mail: christof.woell@kit.edu; Michler, Johann; Maeder, Xavier [Empa, Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkerstrasse 39, CH-3602 Thun (Switzerland); Liu, Jianxi; Wang, Zhengbang; Tsotsalas, Manuel; Liu, Jinxuan; Gliemann, Hartmut; Weidler, Peter G.; Redel, Engelbert, E-mail: james.best@empa.ch, E-mail: engelbert.redel@kit.edu, E-mail: christof.woell@kit.edu; Wöll, Christof, E-mail: james.best@empa.ch, E-mail: engelbert.redel@kit.edu, E-mail: christof.woell@kit.edu [Institute of Functional Interfaces (IFG), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Röse, Silvana [Preparative Macromolecular Chemistry, Institute for Chemical Technology and Polymer Chemistry (ICTP), Karlsruhe Institute of Technology (KIT), Engesserstrasse 18, 76128 Karlsruhe (Germany); Institute for Biological Interfaces (IBG), Karlsruhe Institute of Technology (KIT), Herrmann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Oberst, Vanessa [Institute of Applied Materials (IAM), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Walheim, Stefan [Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)
2015-09-07
Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (E{sub ITO} ≈ 96.7 GPa, E{sub HKUST−1} ≈ 22.0 GPa). For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices.
Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers
International Nuclear Information System (INIS)
Best, James P.; Michler, Johann; Maeder, Xavier; Liu, Jianxi; Wang, Zhengbang; Tsotsalas, Manuel; Liu, Jinxuan; Gliemann, Hartmut; Weidler, Peter G.; Redel, Engelbert; Wöll, Christof; Röse, Silvana; Oberst, Vanessa; Walheim, Stefan
2015-01-01
Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (E ITO ≈ 96.7 GPa, E HKUST−1 ≈ 22.0 GPa). For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices
International Nuclear Information System (INIS)
Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya
2016-01-01
We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ∝ 4.1 Aa), and low electrical resistivity (4.2 x 10 -4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained ''on/off'' current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 x 10 7 , 0.43 V/decade, 0.7 V, and 2.1 cm 2 /V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs. (orig.)
Molecular dynamics simulation about porous thin-film growth in secondary deposition
International Nuclear Information System (INIS)
Chen Huawei; Tieu, A. Kiet; Liu Qiang; Hagiwara, Ichiro; Lu Cheng
2007-01-01
The thin film growth has been confirmed to be assembled by an enormous number of clusters in experiments of CVD. Sequence of clusters' depositions proceeds to form the thin film at short time as gas fluids through surface of substrate. In order to grow condensed thin film using series of cluster deposition, the effect of initial velocity, substrate temperature and density of clusters on property of deposited thin film, especially appearance of nanoscale pores inside thin film must be investigated. In this simulation, three different cluster sizes of 203, 653, 1563 atoms with different velocities (0, 10, 100, 1000 and 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Four clusters and one cluster were used in primary deposition and secondary deposition, respectively. We have clarified that adhesion between clusters and substrate is greatly influenced by initial velocity. As a result, the exfoliation pattern of deposited thin film is dependent on initial velocity and different between them. One borderline dividing whole region into porous region and nonporous region are obtained to show the effect of growth conditions on appearance of nanoscale pores inside thin film. Moreover, we have also shown that the likelihood of porous thin film is dependent on the point of impact of a cluster relative to previously deposited clusters
Molecular dynamics simulation about porous thin-film growth in secondary deposition
Energy Technology Data Exchange (ETDEWEB)
Chen Huawei [School of Mechanical Engineering and Automation, Beihang University, No. 37 Xuyuan Road, Haidian District, Beijing (China) and Mechanical Materials and Mechatronic Engineering, University of Wollongong, Northfields Avenue, NSW 2522 (Australia)]. E-mail: chen_hua_wei@yahoo.com; Tieu, A. Kiet [Mechanical Materials and Mechatronic Engineering, University of Wollongong, Northfields Avenue, NSW 2522 (Australia); Liu Qiang [School of Mechanical Engineering and Automation, Beihang University, No. 37 Xuyuan Road, Haidian District, Beijing (China); Hagiwara, Ichiro [Department of Mechanical Sciences and Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo (Japan); Lu Cheng [Mechanical Materials and Mechatronic Engineering, University of Wollongong, Northfields Avenue, NSW 2522 (Australia)
2007-07-15
The thin film growth has been confirmed to be assembled by an enormous number of clusters in experiments of CVD. Sequence of clusters' depositions proceeds to form the thin film at short time as gas fluids through surface of substrate. In order to grow condensed thin film using series of cluster deposition, the effect of initial velocity, substrate temperature and density of clusters on property of deposited thin film, especially appearance of nanoscale pores inside thin film must be investigated. In this simulation, three different cluster sizes of 203, 653, 1563 atoms with different velocities (0, 10, 100, 1000 and 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Four clusters and one cluster were used in primary deposition and secondary deposition, respectively. We have clarified that adhesion between clusters and substrate is greatly influenced by initial velocity. As a result, the exfoliation pattern of deposited thin film is dependent on initial velocity and different between them. One borderline dividing whole region into porous region and nonporous region are obtained to show the effect of growth conditions on appearance of nanoscale pores inside thin film. Moreover, we have also shown that the likelihood of porous thin film is dependent on the point of impact of a cluster relative to previously deposited clusters.
PZT Thin-Film Micro Probe Device with Dual Top Electrodes
Luo, Chuan
Lead zirconate titanate (PZT) thin-film actuators have been studied intensively for years because of their potential applications in many fields. In this dissertation, a PZT thin-film micro probe device is designed, fabricated, studied, and proven to be acceptable as an intracochlear acoustic actuator. The micro probe device takes the form of a cantilever with a PZT thin-film diaphragm at the tip of the probe. The tip portion of the probe will be implanted in cochlea later in animal tests to prove its feasibility in hearing rehabilitation. The contribution of the dissertation is three-fold. First, a dual top electrodes design, consisting of a center electrode and an outer electrode, is developed to improve actuation displacement of the PZT thin-film diaphragm. The improvement by the dual top electrodes design is studied via a finite element model. When the dimensions of the dual electrodes are optimized, the displacement of the PZT thin-film diaphragm increases about 30%. A PZT thin-film diaphragm with dual top electrodes is fabricated to prove the concept, and experimental results confirm the predictions from the finite element analyses. Moreover, the dual electrode design can accommodate presence of significant residual stresses in the PZT thin-film diaphragm by changing the phase difference between the two electrodes. Second, a PZT thin-film micro probe device is fabricated and tested. The fabrication process consists of PZT thin-film deposition and deep reactive ion etching (DRIE). The uniqueness of the fabrication process is an automatic dicing mechanism that allows a large number of probes to be released easily from the wafer. Moreover, the fabrication is very efficient, because the DRIE process will form the PZT thin-film diaphragm and the special dicing mechanism simultaneously. After the probes are fabricated, they are tested with various possible implantation depths (i.e., boundary conditions). Experimental results show that future implantation depths
Soft Magnetic Multilayered Thin Films for HF Applications
Loizos, George; Giannopoulos, George; Serletis, Christos; Maity, Tuhin; Roy, Saibal; Lupu, Nicoleta; Kijima, Hanae; Yamaguchi, Masahiro; Niarchos, Dimitris
Multilayered thin films from various soft magnetic materials were successfully prepared by magnetron sputtering in Ar atmosphere. The magnetic properties and microstructure were investigated. It is found that the films show good soft magnetic properties: magnetic coercivity of 1-10 Oe and saturation magnetization higher than 1T. The initial permeability of the films is greater than 300 and flattens up to 600 MHz. The multilayer thin film properties in combination with their easy, fast and reproducible fabrication indicate that they are potential candidates for high frequency applications.
Nanocrystalline magnetite thin films grown by dual ion-beam sputtering
International Nuclear Information System (INIS)
Prieto, Pilar; Ruiz, Patricia; Ferrer, Isabel J.; Figuera, Juan de la; Marco, José F.
2015-01-01
Highlights: • We have grown tensile and compressive strained nanocrystalline magnetite thin films by dual ion beam sputtering. • The magnetic and thermoelectric properties can be controlled by the deposition conditions. • The magnetic anisotropy depends on the crystalline grain size. • The thermoelectric properties depend on the type of strain induced in the films. • In plane uniaxial magnetic anisotropy develops in magnetite thin films with grain sizes ⩽20 nm. - Abstract: We have explored the influence of an ion-assisted beam in the thermoelectric and magnetic properties of nanocrystalline magnetite thin films grown by ion-beam sputtering. The microstructure has been investigated by XRD. Tensile and compressive strained thin films have been obtained as a function of the parameters of the ion-assisted beam. The evolution of the in-plane magnetic anisotropy was attributed to crystalline grain size. In some films, magneto-optical Kerr effect measurements reveal the existence of uniaxial magnetic anisotropy induced by the deposition process related with a small grain size (⩽20 nm). Isotropic magnetic properties have observed in nanocrystalline magnetite thin film having larger grain sizes. The largest power factor of all the films prepared (0.47 μW/K 2 cm), obtained from a Seebeck coefficient of −80 μV/K and an electrical resistivity of 13 mΩ cm, is obtained in a nanocrystalline magnetite thin film with an expanded out-of-plane lattice and with a grain size ≈30 nm
Patterned YBa2Cu3O7-x thin films from photopolymerizable precursors
International Nuclear Information System (INIS)
Hung, Y.; Agostinelli, J.A.
1990-01-01
A technique which combines the fabrication and patterning of thin films of the high T c superconductor YBa 2 Cu 3 O 7-x has been developed. The technique possesses the essential features of the metalorganic decomposition method with the additional attribute that the metalorganic precursor is photopolymerizable. Patterns are generated directly in the precursor film using optical exposure through a mask followed by development in a solvent. A subsequent thermal treatment transforms the patterned precursor film to the oriented superconducting phase with c axis perpendicular to the substrate surface. Resistivity measurements for such a patterned film on a single crystal (100)MgO substrate show an onset to the superconducting state occurring at 85 K with zero resistivity below 67 K
Methods for producing thin film charge selective transport layers
Hammond, Scott Ryan; Olson, Dana C.; van Hest, Marinus Franciscus Antonius Maria
2018-01-02
Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.
Direct current magnetron sputter-deposited ZnO thin films
International Nuclear Information System (INIS)
Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong; Knipp, Dietmar
2011-01-01
Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 deg. C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.
Nanomechanical Behavior of High Gas Barrier Multilayer Thin Films.
Humood, Mohammad; Chowdhury, Shahla; Song, Yixuan; Tzeng, Ping; Grunlan, Jaime C; Polycarpou, Andreas A
2016-05-04
Nanoindentation and nanoscratch experiments were performed on thin multilayer films manufactured using the layer-by-layer (LbL) assembly technique. These films are known to exhibit high gas barrier, but little is known about their durability, which is an important feature for various packaging applications (e.g., food and electronics). Films were prepared from bilayer and quadlayer sequences, with varying thickness and composition. In an effort to evaluate multilayer thin film surface and mechanical properties, and their resistance to failure and wear, a comprehensive range of experiments were conducted: low and high load indentation, low and high load scratch. Some of the thin films were found to have exceptional mechanical behavior and exhibit excellent scratch resistance. Specifically, nanobrick wall structures, comprising montmorillonite (MMT) clay and polyethylenimine (PEI) bilayers, are the most durable coatings. PEI/MMT films exhibit high hardness, large elastic modulus, high elastic recovery, low friction, low scratch depth, and a smooth surface. When combined with the low oxygen permeability and high optical transmission of these thin films, these excellent mechanical properties make them good candidates for hard coating surface-sensitive substrates, where polymers are required to sustain long-term surface aesthetics and quality.
Fluorine doped vanadium dioxide thin films for smart windows
International Nuclear Information System (INIS)
Kiri, Pragna; Warwick, Michael E.A.; Ridley, Ian; Binions, Russell
2011-01-01
Thermochromic fluorine doped thin films of vanadium dioxide were deposited from the aerosol assisted chemical vapour deposition reaction of vanadyl acetylacetonate, ethanol and trifluoroacetic acid on glass substrates. The films were characterised with scanning electron microscopy, variable temperature Raman spectroscopy and variable temperature UV/Vis spectroscopy. The incorporation of fluorine in the films led to an increase in the visible transmittance of the films whilst retaining the thermochromic properties. This approach shows promise for improving the aesthetic properties of vanadium dioxide thin films.
2017-06-15
AFRL-RX-WP-JA-2017-0348 THIN-FILM MAGNETLESS FARADAY ROTATORS FOR COMPACT HETEROGENEOUS INTEGRATED OPTICAL ISOLATORS (POSTPRINT) Dolendra Karki...Interim 9 May 2016 – 1 December 2016 4. TITLE AND SUBTITLE THIN-FILM MAGNETLESS FARADAY ROTATORS FOR COMPACT HETEROGENEOUS INTEGRATED OPTICAL...transfer of ultra-compact thin-film magnetless Faraday rotators to silicon photonic substrates. Thin films of magnetization latching bismuth
Microstructure and thermochromic properties of VOX-WOX-VOX ceramic thin films
International Nuclear Information System (INIS)
Khamseh, S.; Ghahari, M.; Araghi, H.; Faghihi Sani, M.A.
2016-01-01
W-doped VO 2 films have been synthesized via oxygen annealing of V-W-V (vanadium-tungsten-vanadium) multilayered films. The effects of middle layer's thickness of V-W-V multilayered film on structure and properties of VO X -WO X -VO X ceramic thin films were investigated. The as-deposited V-W-V multilayered film showed amorphous-like structure when mixed structure of VO 2 (M) and VO 2 (B) was formed in VO X -WO X -VO X ceramic thin films. Tungsten content of VO X -WO X -VO X ceramic thin films increased with increasing middle layer's thickness. With increasing middle layer's thickness, room temperature square resistance (R sq ) of VO X -WO X -VO X ceramic thin films increased from 65 to 86 kΩ/sq. The VO X -WO X -VO X ceramic thin film with the thinnest middle layer showed significant SMT (semiconductor-metal transition) when SMT became negligible on increasing middle layer's thickness. (orig.)
Voltage transients in thin-film InSb Hall sensor
Bardin, Alexey; Ignatjev, Vyacheslav; Orlov, Andrey; Perchenko, Sergey
The work is reached to study temperature transients in thin-film Hall sensors. We experimentally study InSb thin-film Hall sensor. We find transients of voltage with amplitude about 10 μ V on the sensor ports after current switching. We demonstrate by direct measurements that the transients is caused by thermo-e.m.f., and both non-stationarity and heterogeneity of temperature in the film. We find significant asymmetry of temperature field for different direction of the current, which is probably related to Peltier effect. The result can be useful for wide range of scientist who works with switching of high density currents in any thin semiconductor films.
A „Hybrid“ Thin-Film pH Sensor with Integrated Thick-Film Reference
Simonis, Anette; Krings, Thomas; Lüth, Hans; Wang, Joseph; Schöning, Michael J.
2001-01-01
A reference electrode fabricated by means of thick-film technique is deposited onto a silicon substrate and combined with a thin-film pH sensor to a “hybrid†chip system. To evaluate the suitability of this combination, first investigations were carried out. The characteristics of the thin-film pH sensor were studied towards the thick-film Ag/AgCl reference electrode. Measurements were performed in the capacitance/voltage (C/V) and constant capacitance (Concap) mode for different pH ...
Electrical and optical properties of spray - deposited CdSe thin films
International Nuclear Information System (INIS)
Bedir, M.; Oeztas, M.; Bakkaloglu, O. F.
2002-01-01
The CdSe thin films were developed by using spray-deposition technique at different substrate temperatures of 380C, 400C and, 420C on the glass substrate. All spraying processes involved CdCI 2 (0.05 moles/liter) and SeO 2 (0.05 moles/liter ) and were carried out in atmospheric condition. The CdSe thin film samples were characterized using x-ray diffractometer and optical absorption measurements. The electrical properties of the thin film samples were investigated via Wander Pauw method. XRD patterns indicated that the CdSe thin film samples have a hexagonal structure. The direct band gap of the CdSe thin film samples were determined from optical absorption and spectral response measurements of 1.76 eV. The resistivity of the CdSe thin film samples were found to vary in the range from 5.8x10''5 to 7.32x10''5 Ωcm depending to the substrate temperature
Torgovkin, A.; Chaudhuri, S.; Ruhtinas, A.; Lahtinen, M.; Sajavaara, T.; Maasilta, I. J.
2018-05-01
Superconducting titanium nitride (TiN) thin films were deposited on magnesium oxide, sapphire and silicon nitride substrates at 700 °C, using a pulsed laser deposition (PLD) technique, where infrared (1064 nm) pulses from a solid-state laser were used for the ablation from a titanium target in a nitrogen atmosphere. Structural studies performed with x-ray diffraction showed the best epitaxial crystallinity for films deposited on MgO. In the best films, superconducting transition temperatures, T C, as high as 4.8 K were observed, higher than in most previous superconducting TiN thin films deposited with reactive sputtering. A room temperature resistivity down to ∼17 μΩ cm and residual resistivity ratio up to 3 were observed in the best films, approaching reported single crystal film values, demonstrating that PLD is a good alternative to reactive sputtering for superconducting TiN film deposition. For less than ideal samples, the suppression of the film properties were correlated mostly with the unintended incorporation of oxygen (5–10 at%) in the film, and for high oxygen content films, vacuum annealing was also shown to increase the T C. On the other hand, superconducting properties were surprisingly insensitive to the nitrogen content, with high quality films achieved even in the highly nitrogen rich, Ti:N = 40/60 limit. Measures to limit oxygen exposure during deposition must be taken to guarantee the best superconducting film properties, a fact that needs to be taken into account with other deposition methods, as well.
Post-annealing effects on pulsed laser deposition-grown GaN thin films
International Nuclear Information System (INIS)
Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh
2015-01-01
In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular