Effects of Mg Doping on the Performance of InGaN Films Made by Reactive Sputtering

Science.gov (United States)

Kuo, Dong-Hau; Li, Cheng-Che; Tuan, Thi Tran Anh; Yen, Wei-Chun

2015-01-01

Mg-doped InGaN (Mg-InGaN) films have been deposited directly on Si (100) substrates by radio-frequency reactive sputtering technique with single cermet targets in an Ar/N2 atmosphere. The cermet targets with a constant 5% indium content were made by hot pressing the mixture of metallic In, Ga, and Mg powders and ceramic GaN powder. The Mg-InGaN films had a wurtzite structure with a preferential () growth plane. The SEM images showed that Mg-InGaN films were smooth, continuous, free from cracks and holes, and composed of nanometer-sized grains. As the Mg dopant content in Mg-InGaN increased to 7.7 at.%, the film was directly transformed into p-type conduction without a post-annealing process. It had high hole concentration of 5.53 × 1018 cm-3 and electrical mobility of 15.7 ± 4.2 cm2 V-1 s-1. The over-doping of Mg in InGaN degraded the electrical properties. The bandgap of Mg-InGaN films decreased from 2.92 eV to 2.84 eV, as the Mg content increased from 7.7% to 18.2%. The constructed p-type Mg-InGaN/ n-type GaN diode was used to confirm the realization of the p-type InGaN by sputtering technique.

Isopiestic Investigation of the Osmotic and Activity Coefficients of {yMgCl2 + (1 - y)MgSO4}(aq) and the Osmotic Coefficients of Na2SO4.MgSO4(aq) at 298.15 K

Energy Technology Data Exchange (ETDEWEB)

Miladinovic, J; Ninkovic, R; Todorovic, M; Rard, J A

2007-06-06

Isopiestic vapor pressure measurements were made for {l_brace}yMgCl{sub 2} + (1-y)MgSO{sub 4}{r_brace}(aq) solutions with MgCl{sub 2} ionic strength fractions of y = 0, 0.1997, 0.3989, 0.5992, 0.8008, and (1) at the temperature 298.15 K, using KCl(aq) as the reference standard. These measurements for the mixtures cover the ionic strength range I = 0.9794 to 9.4318 mol {center_dot} kg{sup -1}. In addition, isopiestic measurements were made with NaCl(aq) as reference standard for mixtures of {l_brace}xNa{sub 2}SO{sub 4} + (1-x)MgSO{sub 4}{r_brace}(aq) with the molality fraction x = 0.50000 that correspond to solutions of the evaporite mineral bloedite (astrakanite), Na{sub 2}Mg(SO{sub 4}){sub 2} {center_dot} 4H{sub 2}O(cr). The total molalities, m{sub T} = m(Na{sub 2}SO{sub 4}) + m(MgSO{sub 4}), range from m{sub T} = 1.4479 to 4.4312 mol {center_dot} kg{sup -1} (I = 5.0677 to 15.509 mol {center_dot} kg{sup -1}), where the uppermost concentration is the highest oversaturation molality that could be achieved by isothermal evaporation of the solvent at 298.15 K. The parameters of an extended ion-interaction (Pitzer) model for MgCl2(aq) at 298.15 K, which were required for an analysis of the {l_brace}yMgCl{sub 2} + (1-y)MgSO{sub 4}{r_brace}(aq) mixture results, were evaluated up to I = 12.025 mol {center_dot} kg{sup -1} from published isopiestic data together with the six new osmotic coefficients obtained in this study. Osmotic coefficients of {l_brace}yMgCl{sub 2} + (1-y)MgSO{sub 4}{r_brace}(aq) solutions from the present study, along with critically-assessed values from previous studies, were used to evaluate the mixing parameters of the extended ion-interaction model.

High surface hole concentration p-type GaN using Mg implantation

CERN Document Server

Long Tao; Zhang Guo Yi

2001-01-01

Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The p-type GaN was achieved with high hole concentration (8.28 x 10 sup 1 sup 7 cm sup - sup 3) conformed by Van derpauw Hall measurement after annealing at 800 degree C for 1 h. this is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration

Up-conversion and near infrared luminescence in Er3+/Yb3+ co-doped glass-ceramic containing MgGa2O4 nano-crystals

International Nuclear Information System (INIS)

Sun, Jiaju; Yu, Lixin; Li, Fuhai; Wei, Shuilin; Li, Songchu

2016-01-01

The MgO–Ga 2 O 3 –SiO 2 (MG-S) glasses and nanocrystalline glass-ceramics (GCs) containing MgGa 2 O 4 nanocrystals codoped with Er 3+ and Yb 3+ were prepared by a simple sol–gel method. The formation of MgGa 2 O 4 nanocrystals in the GCs was confirmed by the X-ray diffraction (XRD). Their morphology was investigated applying high-resolution transmission electron microscopy (HRTEM). Stark splitting of near infrared (NIR) and up-conversion (UC) emission implies that the Er 3+ is incorporated into MgGa 2 O 4 nanocrystals. The effect of the MgO, Ga 2 O 3 content and sintering temperature on the structure of the prepared samples was systematically studied. Under 980 nm excitation, intense UC and NIR emission (1530 nm) were observed in the MG-S GCs by efficient energy transfer from Yb 3+ to Er 3+ . The two-photon process was confirmed to be responsible for both the green and red UC emissions. - Highlights: • It is interesting that the CIE chromaticity coordinates of the several prepared CaMO 4 :Eu samples by a hydrothermal method are very close to the standard of white light.

Spectroscopic properties of a novel near-infrared tunable laser material Ni:MgGa2O4

International Nuclear Information System (INIS)

Suzuki, Takenobu; Senthil Murugan, Ganapathy; Ohishi, Yasutake

2005-01-01

An intense emission band from Ni 2+ in MgGa 2 O 4 spinel in the range of 1.1-1.6μm was observed at room temperature. The emission band could be assigned to the downward d-d transition of T2g3->A2g3 of Ni 2+ ions in octahedral sites. The lifetime of the emission was more than 1.6ms from 5 to 300K. This material has potential as a near-infrared tunable-laser host

Energetics of Mg incorporation at GaN(0001) and GaN(0001¯) surfaces

Science.gov (United States)

Sun, Qiang; Selloni, Annabella; Myers, T. H.; Doolittle, W. Alan

2006-04-01

By using density functional calculations in the generalized gradient approximation, we investigate the energetics of Mg adsorption and incorporation at GaN(0001) and GaN(0001¯) surfaces under various Ga and Mg coverage conditions as well as in presence of light or electron beam-induced electronic excitation. We find significant differences in Mg incorporation between Ga- and N-polar surfaces. Mg incorporation is easier at the Ga-polar surface, but high Mg coverages are found to cause important distortions which locally change the polarity from Ga to N polar. At the N-rich and moderately Ga-rich GaN(0001) surface, 0.25 ML of Mg substituting Ga in the top bilayer strongly reduce the surface diffusion barriers of Ga and N adatoms, in agreement with the surfactant effect observed in experiments. As the Mg coverage exceeds 0.5 ML, partial incorporation in the subsurface region (second bilayer) becomes favorable. A surface structure with 0.5 ML of incorporated Mg in the top bilayer and 0.25 ML in the second bilayer is found to be stable over a wide range of Ga chemical potential. At the Ga bilayer-terminated GaN(0001) surface, corresponding to Ga-rich conditions, configurations where Mg is incorporated in the interface region between the metallic Ga bilayer and the underlying GaN bilayer appear to be favored. At the N-polar surface, Mg is not incorporated under N-rich or moderately Ga-rich conditions, whereas incorporation in the adlayer may take place under Ga-rich conditions. In the presence of light or electron beam induced excitation, energy differences between Mg incorporated at the surface and in deeper layers are reduced so that the tendency toward surface segregation is also reduced.

Investigation of GaN LED with Be-implanted Mg-doped GaN layer

International Nuclear Information System (INIS)

Huang, H.-W.; Kao, C.C.; Chu, J.T.; Kuo, H.C.; Wang, S.C.; Yu, C.C.; Lin, C.F.

2004-01-01

We report the electrical and optical characteristics of GaN light emitting diode (LED) with beryllium (Be) implanted Mg-doped GaN layer. The p-type layer of Be-implanted GaN LED showed a higher hole carrier concentration of 2.3 x 10 18 cm -3 and low specific contact resistance value of 2.0 x 10 -4 Ωcm 2 than as-grown p-GaN LED samples without Be-implantation. The Be-implanted GaN LEDs with InGaN/GaN MQW show slightly lower light output (about 10%) than the as-grown GaN LEDs, caused by the high RTA temperature annealing process

High surface hole concentration p-type GaN using Mg implantation

International Nuclear Information System (INIS)

Long Tao; Yang Zhijian; Zhang Guoyi

2001-01-01

Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The p-type GaN was achieved with high hole concentration (8.28 x 10 17 cm -3 ) conformed by Van derpauw Hall measurement after annealing at 800 degree C for 1 h. this is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration

The growth and uptake of Ga and In of rice (Oryza sative L.) seedlings as affected by Ga and In concentrations in hydroponic cultures.

Science.gov (United States)

Syu, Chien-Hui; Chien, Po-Hsuan; Huang, Chia-Chen; Jiang, Pei-Yu; Juang, Kai-Wei; Lee, Dar-Yuan

2017-01-01

Limited information is available on the effects of gallium (Ga) and indium (In) on the growth of paddy rice. The Ga and In are emerging contaminants and widely used in high-tech industries nowadays. Understanding the toxicity and accumulation of Ga and In by rice plants is important for reducing the effect on rice production and exposure risk to human by rice consumption. Therefore, this study investigates the effect of Ga and In on the growth of rice seedlings and examines the accumulation and distribution of those elements in plant tissues. Hydroponic cultures were conducted in phytotron glasshouse with controlled temperature and relative humidity conditions, and the rice seedlings were treated with different levels of Ga and In in the nutrient solutions. The growth index and the concentrations of Ga and In in roots and shoots of rice seedlings were measured after harvesting. A significant increase in growth index with increasing Ga concentrations in culture solutions (<10mgGaL -1 ) was observed. In addition, the uptake of N, K, Mg, Ca, Mn by rice plants was also enhanced by Ga. However, the growth inhibition were observed while the In concentrations higher than 0.08mgL -1 , and the nutrients accumulated in rice plants were also significant decreased after In treatments. Based on the dose-response curve, we observed that the EC 10 (effective concentration resulting in 10% growth inhibition) value for In treatment was 0.17mgL -1 . The results of plant analysis indicated that the roots were the dominant sink of Ga and In in rice seedlings, and it was also found that the capability of translocation of Ga from roots to shoots were higher than In. In addition, it was also found that the PT 10 (threshold concentration of phytotoxicity resulting in 10% growth retardation) values based on shoot height and total biomass for In were 15.4 and 10.6μgplant -1 , respectively. The beneficial effects on the plant growth of rice seedlings were found by the addition of Ga in

The dependence of Raman scattering on Mg concentration in Mg-doped GaN grown by MBE

International Nuclear Information System (INIS)

Flynn, Chris; Lee, William

2014-01-01

Magnesium-doped GaN (GaN:Mg) films having Mg concentrations in the range 5 × 10 18 –5 × 10 20 cm −3 were fabricated by molecular beam epitaxy. Raman spectroscopy was employed to study the effects of Mg incorporation on the positions of the E 2 and A 1 (LO) lines identifiable in the Raman spectra. For Mg concentrations in excess of 2 × 10 19 cm −3 , increases in the Mg concentration shift both lines to higher wave numbers. The shifts of the Raman lines reveal a trend towards compressive stress induced by incorporation of Mg into the GaN films. The observed correlation between the Mg concentration and the Raman line positions establish Raman spectroscopy as a useful tool for optimizing growth of Mg-doped GaN. (papers)

Combination of the auxins NAA, IBA, and IAA with GA3 improves the commercial seed-tuber production of potato (Solanum tuberosum L.) under in vitro conditions.

Science.gov (United States)

Kumlay, Ahmet Metin

2014-01-01

The study compared the effects of 1.0 × MS medium containing various concentrations of α-naphthaleneacetic acid (NAA), indole-3-acetic acid (IAA), and indole-3-butyric acid (IBA), alone or in combination with gibberellic acid (GA3) in micropropagation of three potato (Solanum tuberosum L.) cultivars Pasinler, Granola, and Caspar using binodal stem cuttings. The results testified improved regeneration on 1.0 × MS medium containing variants of NAA, IAA, and IBA plus GA3 on all cultivars. The minimum days to shoot induction on three cultivars ranged 4.25-5 d on 1.0 × MS medium containing 0.25 mg L(-1) GA3 + 1 mg L(-1) NAA. The longest shoots (11.8 cm), maximum number of nodes (13.50), and maximum number of leaves (11.00) were recorded on cv. Caspar on 1.0 × MS medium containing 1 mg L(-1) NAA + 0.25 mg L(-1) GA3. The minimum time to root induction (12.25 d) was noted on cv. Pasinler on the same medium. All of the regenerated shoots could be easily rooted. The results showed that the combined effect of various concentrations of NAA, IAA, and IBA plus GA3 was more pronounced compared to the auxins used alone. The results of this research are of significant importance for potato breeders.

6-BA和GA_4＋7喷施处理及其他措施促进长富2号苹果幼苗分枝的效果%Effects of 6-BA and GA_4＋7 as well as other manual measures on branches formation of apple nursery stock

Institute of Scientific and Technical Information of China (English)

张庆伟; 宋春晖; 邢利博; 韩明玉; 赵彩平; 李高潮

2011-01-01

以八楞海棠＋M26＋长富2号苹果苗为试材研究了6-BA单独喷施、6-BA和GA_4＋7等量混合物喷施、摘心、摘叶和刻芽等处理促进苹果幼苗分枝的效果。结果表明，6-BA及6-BA和GA_4＋7等量混合物喷施处理能够有效地促进苹果幼苗产生分枝；相同施用浓度下，6-BA和GA_4＋7等量混合物喷施处理的效果要优于单独使用6-BA，其适宜的质量浓度为1500mg·L^-1。摘叶和刻芽不能促进幼苗分枝产生；摘心可促使幼苗产生少量的长枝，但存在分枝数量少、新生主枝细弱和分枝角度较小等问题。摘叶结合6-BA或6-BA和GA_4＋7等量混合物的施用在低质量浓度（500mg·L^-1）下可以显著提高促分枝效果，高质量浓度（1000～2000mg·L^-1）时提高作用表现的不显著。综合实验结果，建议生产中采用1500mg·L^-16-BA和GA_4＋7等量混合物喷施的方式培育带分枝苹果苗木。%The apple （Malus domestica Borth.） cultivar Fuji Nagafu No.2 was used to study the effects of 6-BA, equal mixture of 6-BA and GA4＋7, leaf removing, pinching and bud notching on improving branching of nursery stock with M26 as interstock and M. robusta Rehd. as rootstock. The results showed that spraying treatments of 6-BA and the equal mixture of 6-BA and GA_4＋7 were effective for improving seedlings branching situation. When applying same concentration the mixture treatment＇ s effect was better than 6-BA alone and the most appropriate concentration was 1 500 mg· L^-1. Leaf removing and bud notching could not make nursery stock produce any lateral branches;though pinching treatment could produce a small number of long shoots, it could not meet requirement because of its narrow branching angle and thin new-built leader. The treatment combining leaf removing with 6-BA or the mixture spraying gained better effect than 6-BA or the mixture spraying alone when applying lower spraying concentration （500 mg· L^-1） ; but

Crystal orientation of monoclinic β-Ga2O3 thin films formed on cubic MgO substrates with a γ-Ga2O3 interfacial layer

Science.gov (United States)

Nakagomi, Shinji; Kokubun, Yoshihiro

2017-12-01

The crystal orientation relationship between β-Ga2O3 and MgO in β-Ga2O3 thin films prepared on (1 0 0), (1 1 1), and (1 1 0) MgO substrates was investigated by X-ray diffraction measurements and cross-sectional transmission electron microscopy images. The γ-Ga2O3 interfacial layer was present between β-Ga2O3 and MgO acted as a buffer to connect β-Ga2O3 on MgO. The following conditions were satisfied under each case: β-Ga2O3 (1 0 0)||MgO (1 0 0) and β-Ga2O3 [0 0 1]||MgO 〈0 1 1〉 for the formation of β-Ga2O3 on (1 0 0) MgO, and β-Ga2O3 (2 bar 0 1)||MgO (1 1 1) for the formation of β-Ga2O3 on (1 1 1) MgO, as well as each condition of β-Ga2O3 [0 1 0] (1 0 0)||MgO [ 1 bar 1 0 ] (0 0 1), β-Ga2O3 [0 1 0] (1 0 0)||MgO [ 0 1 bar 1 ] (1 0 0), and β-Ga2O3 [0 1 0] (1 0 0)||MgO [ 1 0 1 bar ] (0 1 0). β-Ga2O3 (1 bar 0 2)||MgO(1 1 0) and β-Ga2O3 [0 1 0] ⊥ MgO [0 0 1] for β-Ga2O3 formed on (1 1 0) MgO. The β-Ga2O3 formed on (1 1 1) MgO at 800 °C exhibited a threefold structure. The β-Ga2O3 formed on (1 1 0) MgO had a twofold structure but different by 90° from the result reported previously.

Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy

International Nuclear Information System (INIS)

Burnham, Shawn D.; Doolittle, W. Alan; Namkoong, Gon; Look, David C.; Clafin, Bruce

2008-01-01

The metal modulated epitaxy (MME) growth technique is reported as a reliable approach to obtain reproducible large hole concentrations in Mg-doped GaN grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire substrates. An extremely Ga-rich flux was used, and modulated with the Mg source according to the MME growth technique. The shutter modulation approach of the MME technique allows optimal Mg surface coverage to build between MME cycles and Mg to incorporate at efficient levels in GaN films. The maximum sustained concentration of Mg obtained in GaN films using the MME technique was above 7x10 20 cm -3 , leading to a hole concentration as high as 4.5x10 18 cm -3 at room temperature, with a mobility of 1.1 cm 2 V -1 s -1 and a resistivity of 1.3 Ω cm. At 580 K, the corresponding values were 2.6x10 19 cm -3 , 1.2 cm 2 V -1 s -1 , and 0.21 Ω cm, respectively. Even under strong white light, the sample remained p-type with little change in the electrical parameters

Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy

Science.gov (United States)

Burnham, Shawn D.; Namkoong, Gon; Look, David C.; Clafin, Bruce; Doolittle, W. Alan

2008-07-01

The metal modulated epitaxy (MME) growth technique is reported as a reliable approach to obtain reproducible large hole concentrations in Mg-doped GaN grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire substrates. An extremely Ga-rich flux was used, and modulated with the Mg source according to the MME growth technique. The shutter modulation approach of the MME technique allows optimal Mg surface coverage to build between MME cycles and Mg to incorporate at efficient levels in GaN films. The maximum sustained concentration of Mg obtained in GaN films using the MME technique was above 7×1020cm-3, leading to a hole concentration as high as 4.5×1018cm-3 at room temperature, with a mobility of 1.1cm2V-1s-1 and a resistivity of 1.3Ωcm. At 580K, the corresponding values were 2.6×1019cm-3, 1.2cm2V-1s-1, and 0.21Ωcm, respectively. Even under strong white light, the sample remained p-type with little change in the electrical parameters.

Structure, mechanical properties, corrosion behavior and cytotoxicity of biodegradable Mg-X (X=Sn, Ga, In) alloys.

Science.gov (United States)

Kubásek, J; Vojtěch, D; Lipov, J; Ruml, T

2013-05-01

As-cast Mg-Sn, Mg-Ga and Mg-In alloys containing 1-7 wt.% of alloying elements were studied in this work. Structural and chemical analysis of the alloys was performed by using light and scanning electron microscopy, energy dispersive spectrometry, x-ray diffraction, x-ray photoelectron spectroscopy and glow discharge spectrometry. Mechanical properties were determined by Vickers hardness measurements and tensile testing. Corrosion behavior in a simulated physiological solution (9 g/l NaCl) was studied by immersion tests and potentiodynamic measurements. The cytotoxicity effect of the alloys on human osteosarcoma cells (U-2 OS) was determined by an indirect contact assay. Structural investigation revealed the dendritic morphology of the as-cast alloys with the presence of secondary eutectic phases in the Mg-Sn and Mg-Ga alloys. All the alloying elements showed hardening and strengthening effects on magnesium. This effect was the most pronounced in the case of Ga. All the alloying elements at low concentrations of approximately 1 wt.% were also shown to positively affect the corrosion resistance of Mg. But at higher concentrations of Ga and Sn the corrosion resistance worsened due to galvanic effects of secondary phases. Cytotoxicity tests indicated that Ga had the lowest toxicity, followed by Sn. The most severe toxicity was observed in the case of In. Copyright © 2013 Elsevier B.V. All rights reserved.

Substrate and Mg doping effects in GaAs nanowires

Directory of Open Access Journals (Sweden)

Perumal Kannappan

2017-10-01

Full Text Available Mg doping of GaAs nanowires has been established as a viable alternative to Be doping in order to achieve p-type electrical conductivity. Although reports on the optical properties are available, few reports exist about the physical properties of intermediate-to-high Mg doping in GaAs nanowires grown by molecular beam epitaxy (MBE on GaAs(111B and Si(111 substrates. In this work, we address this topic and present further understanding on the fundamental aspects. As the Mg doping was increased, structural and optical investigations revealed: i a lower influence of the polytypic nature of the GaAs nanowires on their electronic structure; ii a considerable reduction of the density of vertical nanowires, which is almost null for growth on Si(111; iii the occurrence of a higher WZ phase fraction, in particular for growth on Si(111; iv an increase of the activation energy to release the less bound carrier in the radiative state from nanowires grown on GaAs(111B; and v a higher influence of defects on the activation of nonradiative de-excitation channels in the case of nanowires only grown on Si(111. Back-gate field effect transistors were fabricated with individual nanowires and the p-type electrical conductivity was measured with free hole concentration ranging from 2.7 × 1016 cm−3 to 1.4 × 1017 cm−3. The estimated electrical mobility was in the range ≈0.3–39 cm2/Vs and the dominant scattering mechanism is ascribed to the WZ/ZB interfaces. Electrical and optical measurements showed a lower influence of the polytypic structure of the nanowires on their electronic structure. The involvement of Mg in one of the radiative transitions observed for growth on the Si(111 substrate is suggested.

Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

International Nuclear Information System (INIS)

Wu, L L; Zhao, D G; Jiang, D S; Chen, P; Le, L C; Li, L; Liu, Z S; Zhang, S M; Zhu, J J; Wang, H; Zhang, B S; Yang, H

2013-01-01

The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits the best ohmic contact properties with respect to the specific contact resistivity (ρ c ). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer. (paper)

Epitaxial alloys of Al{sub x}Ga{sub 1−x}As:Mg with different types of conductivity

Energy Technology Data Exchange (ETDEWEB)

Seredin, P.V., E-mail: paul@phys.vsu.ru [Voronezh State University, Universitetskaya pl., 1, 394006 Voronezh (Russian Federation); Lenshin, A.S. [Voronezh State University, Universitetskaya pl., 1, 394006 Voronezh (Russian Federation); Arsentyev, I.N., E-mail: arsentyev@mail.ioffe.ru [Ioffe Physical and Technical Institute, Polytekhnicheskaya, 26, 194021 St-Petersburg (Russian Federation); Tarasov, I.S. [Ioffe Physical and Technical Institute, Polytekhnicheskaya, 26, 194021 St-Petersburg (Russian Federation); Prutskij, Tatiana, E-mail: prutskij@yahoo.com [Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla, Privada 17 Norte, No 3417, Col San Miguel Hueyotlipan, 72050 Puebla, Pue. (Mexico); Leiste, Harald; Rinke, Monika [Karlsruhe Nano Micro Facility, H.-von-Helmholtz-Platz, 1, 76344 Eggenstein-Leopoldshafen (Germany)

2016-10-01

This project employed high-resolution X-ray diffraction, Raman spectroscopy and photoluminescence spectroscopy to investigate the structural, optical and band energy properties of the MOCVD epitaxial heterostructures, Al{sub x}Ga{sub 1−x}As:Mg/GaAs(100), with different levels of magnesium doping. It was shown that the choice of technological conditions used in the preparation of the Al{sub x}Ga{sub 1−x}As:Mg alloy allowed different types of conductivity and it was also possible to achieve significantly different concentrations of the charge carriers in the epitaxial film.

Ab initio atomistic thermodynamics calculations of the initial deposition of epitaxial MgO film on GaAs(001)-β2(2 × 4)

International Nuclear Information System (INIS)

Tamarany, Rizcky; Lee, Seung-Cheol; Kim, Hyung-Jun; Choi, Jung-Hae

2013-01-01

Ab initio calculations were performed to investigate the initial deposition of epitaxial MgO on GaAs(001)-β2(2 × 4). The differences between the chemical bonding of Mg-As and O-As were characterized by the adsorption energies of atomic O and Mg at several symmetrically distinct sites, and O bonding was substantially stronger than that of Mg. Thermodynamics were analyzed through the introduction of environmental chemical potentials simulating in situ growth conditions by the sputtering of a stoichiometric MgO target. A surface phase diagram was generated under Mg and O environments with constrained equilibrium, and the results explained the initial formation of an epitaxial MgO phase on GaAs(001)-β2(2 × 4).

Lattice location of Mg in GaN: a fresh look at doping limitations

CERN Document Server

AUTHOR|(CDS)2069243; Augustyns, Valerie; Granadeiro Costa, Angelo Rafael; David Bosne, Eric; De Lemos Lima, Tiago Abel; Lippertz, Gertjan; Martins Correia, Joao; Castro Ribeiro Da Silva, Manuel; Kappers, Menno; Temst, Kristiaan; Vantomme, André; Da Costa Pereira, Lino Miguel

2017-01-01

Radioactive 27Mg (t1/2=9.5 min) was implanted into GaN of different doping types at CERN’s ISOLDE facility and its lattice site determined via beta− emission channeling. Following implantations between room temperature and 800°C, the majority of 27Mg occupies the substitutional Ga sites, however, below 350°C significant fractions were also found on interstitial positions ~0.6 Å from ideal octahedral sites. The interstitial fraction of Mg was correlated with the GaN doping character, being highest (up to 31%) in samples doped p-type with 2E19 cm−3 stable Mg during epilayer growth, and lowest in Si-doped n-GaN, thus giving direct evidence for the amphoteric character of Mg. Implanting above 350°C converts interstitial 27Mg to substitutional Ga sites, which allows estimating the activation energy for migration of interstitial Mg as between 1.3 and 2.0 eV.

Electronic structure and optical properties of Al and Mg co-doped GaN

International Nuclear Information System (INIS)

Ji Yan-Jun; Du Yu-Jie; Wang Mei-Shan

2013-01-01

The electronic structure and optical properties of Al and Mg co-doped GaN are calculated from first principles using density function theory with the plane-wave ultrasoft pseudopotential method. The results show that the optimal form of p-type GaN is obtained with an appropriate Al:Mg co-doping ratio rather than with only Mg doping. Al doping weakens the interaction between Ga and N, resulting in the Ga 4s states moving to a high energy region and the system band gap widening. The optical properties of the co-doped system are calculated and compared with those of undoped GaN. The dielectric function of the co-doped system is anisotropic in the low energy region. The static refractive index and reflectivity increase, and absorption coefficient decreases. This provides the theoretical foundation for the design and application of Al—Mg co-doped GaN photoelectric materials

Improved interface quality and luminescence capability of InGaN/GaN quantum wells with Mg pretreatment

Energy Technology Data Exchange (ETDEWEB)

Wu, Zhengyuan; Shen, Xiyang; Xiong, Huan; Li, Qingfei; Kang, Junyong; Fang, Zhilai [Xiamen University, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen (China); Lin, Feng; Yang, Bilan; Lin, Shilin [San' an Optoelectronics Co., Ltd, Xiamen (China); Shen, Wenzhong [Shanghai Jiao Tong University, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics, Shanghai (China); Zhang, Tong-Yi [Shanghai University, Shanghai University Materials Genome Institute and Shanghai Materials Genome Institute, Shanghai (China)

2016-02-15

Interface modification of high indium content InGaN/GaN quantum wells was carried out by Mg pretreatment of the GaN barrier surface. The indium in the Mg-pretreated InGaN layer was homogeneously distributed, making the interfaces abrupt. The improved interface quality greatly enhanced light emission capacity. The cathodoluminescence intensity of the Mg-pretreated InGaN/GaN quantum wells was correspondingly much stronger than those of the InGaN/GaN quantum wells without Mg pretreatment. (orig.)

Ab initio atomistic thermodynamics calculations of the initial deposition of epitaxial MgO film on GaAs(001)-{beta}2(2 Multiplication-Sign 4)

Energy Technology Data Exchange (ETDEWEB)

Tamarany, Rizcky; Lee, Seung-Cheol [Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Nanomaterials Science and Engineering, University of Science and Technology, Daejeon 305-350 (Korea, Republic of); Kim, Hyung-Jun; Choi, Jung-Hae [Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)

2013-02-07

Ab initio calculations were performed to investigate the initial deposition of epitaxial MgO on GaAs(001)-{beta}2(2 Multiplication-Sign 4). The differences between the chemical bonding of Mg-As and O-As were characterized by the adsorption energies of atomic O and Mg at several symmetrically distinct sites, and O bonding was substantially stronger than that of Mg. Thermodynamics were analyzed through the introduction of environmental chemical potentials simulating in situ growth conditions by the sputtering of a stoichiometric MgO target. A surface phase diagram was generated under Mg and O environments with constrained equilibrium, and the results explained the initial formation of an epitaxial MgO phase on GaAs(001)-{beta}2(2 Multiplication-Sign 4).

Ferromagnetism and transport in Mn and Mg co-implanted GaAs

Energy Technology Data Exchange (ETDEWEB)

Kulbachinskii, V A [Moscow State University, Low Temperature Physics Department, 119992, GSP-2, Moscow (Russian Federation); Gurin, P V [Moscow State University, Low Temperature Physics Department, 119992, GSP-2, Moscow (Russian Federation); Danilov, Yu A [Physico-Technical Research Institute, University of Nizhny Novgorod, 603950, Nizhny Novgorod (Russian Federation); Malysheva, E I [Physico-Technical Research Institute, University of Nizhny Novgorod, 603950, Nizhny Novgorod (Russian Federation); Horikoshi, Y [School of science and engineering, Waseda university, 3-4-1, Okubo, Tokyo 169-8555 (Japan); Onomitsu, K [School of science and engineering, Waseda university, 3-4-1, Okubo, Tokyo 169-8555 (Japan)

2007-03-15

We investigated the influence of Mn and Mg co-implantation accompanied by rapid thermal annealing on magnetic and galvanomagnetic properties of p-GaAs. We characterized the samples with SQUID magnetometry and magnetotransport measurements in the temperature interval 4.2 K4.2{<=}T{<=}300 K. The anomalous Hall effect is visible up to 195 K and shows influence of ferromagnetism of Ga{sub 1-x}Mn{sub x}As solid solution on galvanomagnetic properties of holes. Above this temperature, ferromagnetism survives due to the MnAs and Ga{sub 1-x}Mn{sub x} clusters. The magnetoresistance changes from colossal negative to enhanced positive with increasing temperature near T = 35 K.

Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

International Nuclear Information System (INIS)

Zhang Meng; Bhattacharya, Pallab; Guo Wei; Banerjee, Animesh

2010-01-01

Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740 deg. C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1x10 18 cm -3 . The corresponding doping efficiency and hole mobility are ∼4.9% and 3.7 cm 2 /V s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (λ peak =529 nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8 Ω.

Ternary gallides RE{sub 4}Rh{sub 9}Ga{sub 5}, RE{sub 5}Rh{sub 12}Ga{sub 7} and RE{sub 7}Rh{sub 18}Ga{sub 11} (RE=Y, La-Nd, Sm, Gd, Tb). Intergrowth structures with MgCu{sub 2} and CaCu{sub 5} related slabs

Energy Technology Data Exchange (ETDEWEB)

Seidel, Stefan; Rodewald, Ute C.; Poettgen, Rainer [Univ. Muenster (Germany). Inst. fuer Anorganische und Analytische Chemie; Janka, Oliver [Univ. Oldenburg (Germany). Inst. fuer Chemie

2017-07-01

Fourteen ternary gallides RE{sub 4}Rh{sub 9}Ga{sub 5}, RE{sub 5}Rh{sub 12}Ga{sub 7} and RE{sub 7}Rh{sub 18}Ga{sub 11} (RE=Y, La-Nd, Sm, Gd, Tb) were synthesized from the elements by arc-melting, followed by different annealing sequences either in muffle or induction furnaces. The samples were characterized through Guinier powder patterns and the crystal structures of Ce{sub 4}Rh{sub 9}Ga{sub 5}, Ce{sub 5}Rh{sub 12}Ga{sub 7}, Ce{sub 7}Rh{sub 18}Ga{sub 11}, Nd{sub 5}Rh{sub 10.44(4)}Ga{sub 8.56(4)}, Nd{sub 4}Rh{sub 9}Ga{sub 5} and Gd{sub 4}Rh{sub 9}Ga{sub 5} were refined from single crystal X-ray diffractometer data. The new gallides are the n=2, 3 and 5 members of the RE{sub 2+n} Rh{sub 3+3n} Ga{sub 1+2n} structure series in the Parthe intergrowth concept. The slabs of these intergrowth structures derive from the cubic Laves phase MgCu{sub 2} (Mg{sub 2}Ni{sub 3}Si as ternary variant) and CaCu{sub 5} (CeCo{sub 3}B{sub 2} as ternary variant). Only the Nd{sub 5}Rh{sub 10.44(4)}Ga{sub 8.56(4)} crystal shows Rh/Ga mixing within the Laves type slabs. Magnetic susceptibility measurements reveal Pauli paramagnetism for Y{sub 4}Rh{sub 9}Ga{sub 5} and Curie-Weiss paramagnetism for Gd{sub 4}Rh{sub 9}Ga{sub 5} and Tb{sub 4}Rh{sub 9}Ga{sub 5}. Low-temperature data show ferromagnetic ordering at T{sub C}=78.1 (Gd{sub 4}Rh{sub 9}Ga{sub 5}) and 55.8 K (Tb{sub 4}Rh{sub 9}Ga{sub 5}).

Optical properties of Mg doped p-type GaN nanowires

Science.gov (United States)

Patsha, Avinash; Pandian, Ramanathaswamy; Dhara, S.; Tyagi, A. K.

2015-06-01

Mg doped p-type GaN nanowires are grown using chemical vapor deposition technique in vapor-liquid-solid (VLS) process. Morphological and structural studies confirm the VLS growth process of nanowires and wurtzite phase of GaN. We report the optical properties of Mg doped p-type GaN nanowires. Low temperature photoluminescence studies on as-grown and post-growth annealed samples reveal the successful incorporation of Mg dopants. The as-grwon and annealed samples show passivation and activation of Mg dopants, respectively, in GaN nanowires.

Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar (000\\bar{1}) p-type GaN grown by metalorganic vapor phase epitaxy

Science.gov (United States)

Nonoda, Ryohei; Shojiki, Kanako; Tanikawa, Tomoyuki; Kuboya, Shigeyuki; Katayama, Ryuji; Matsuoka, Takashi

2016-05-01

The effects of growth conditions such as Mg/Ga and V/III ratios on the properties of N-polar (000\\bar{1}) p-type GaN grown by metalorganic vapor phase epitaxy were studied. Photoluminescence spectra from Mg-doped GaN depended on Mg/Ga and V/III ratios. For the lightly doped samples, the band-to-acceptor emission was observed at 3.3 eV and its relative intensity decreased with increasing V/III ratio. For the heavily doped samples, the donor-acceptor pair emission was observed at 2.8 eV and its peak intensity monotonically decreased with V/III ratio. The hole concentration was maximum for the Mg/Ga ratio. This is the same tendency as in group-III polar (0001) growth. The V/III ratio also reduced the hole concentration. The higher V/III ratio reduced the concentration of residual donors such as oxygen by substituting nitrogen atoms. The surface became rougher with increasing V/III ratio and the hillock density increased.

Thermodynamic analysis of Mg-doped p-type GaN semiconductor

International Nuclear Information System (INIS)

Li Jingbo; Liang Jingkui; Rao Guanghui; Zhang Yi; Liu Guangyao; Chen Jingran; Liu Quanlin; Zhang Weijing

2006-01-01

A thermodynamic modeling of Mg-doped p-type GaN was carried out to describe the thermodynamic behaviors of native defects, dopants (Mg and H) and carriers in GaN. The formation energies of charged component compounds in a four-sublattice model were defined as functions of the Fermi-level based on the results of the first-principles calculations and adjusted to fit experimental data. The effect of the solubility of Mg on the low doping efficiency of Mg in GaN and the role of H in the Mg-doping MOCVD process were discussed. The modeling provides a thermodynamic approach to understand the doping process of GaN semiconductors

Dry etching of MgCaO gate dielectric and passivation layers on GaN

International Nuclear Information System (INIS)

Hlad, M.; Voss, L.; Gila, B.P.; Abernathy, C.R.; Pearton, S.J.; Ren, F.

2006-01-01

MgCaO films grown by rf plasma-assisted molecular beam epitaxy and capped with Sc 2 O 3 are promising candidates as surface passivation layers and gate dielectrics on GaN-based high electron mobility transistors (HEMTs) and metal-oxide semiconductor HEMTs (MOS-HEMTs), respectively. Two different plasma chemistries were examined for etching these thin films on GaN. Inductively coupled plasmas of CH 4 /H 2 /Ar produced etch rates only in the range 20-70 A/min, comparable to the Ar sputter rates under the same conditions. Similarly slow MgCaO etch rates (∼100 A/min) were obtained with Cl 2 /Ar discharges under the same conditions, but GaN showed rates almost an order of magnitude higher. The MgCaO removal rates are limited by the low volatilities of the respective etch products. The CH 4 /H 2 /Ar plasma chemistry produced a selectivity of around 2 for etching the MgCaO with respect to GaN

Cathodoluminescence study of Mg activation in non-polar and semi-polar faces of undoped/Mg-doped GaN core-shell nanorods

Science.gov (United States)

Hortelano, V.; Martínez, O.; Cuscó, R.; Artús, L.; Jiménez, J.

2016-03-01

Spectrally and spatially resolved cathodoluminescence (CL) measurements were carried out at 80 K on undoped/Mg-doped GaN core-shell nanorods grown by selective area growth metalorganic vapor phase epitaxy in order to investigate locally the optical activity of the Mg dopants. A study of the luminescence emission distribution over the different regions of the nanorods is presented. We have investigated the CL fingerprints of the Mg incorporation into the non-polar lateral prismatic facets and the semi-polar facets of the pyramidal tips. The amount of Mg incorporation/activation was varied by using several Mg/Ga flow ratios and post-growth annealing treatment. For lower Mg/Ga flow ratios, the annealed nanorods clearly display a donor-acceptor pair band emission peaking at 3.26-3.27 eV and up to 4 LO phonon replicas, which can be considered as a reliable indicator of effective p-type Mg doping in the nanorod shell. For higher Mg/Ga flow ratios, a substantial enhancement of the yellow luminescence emission as well as several emission subbands are observed, which suggests an increase of disorder and the presence of defects as a consequence of the excess Mg doping.

Excimer-laser-induced activation of Mg-doped GaN layers

International Nuclear Information System (INIS)

Lin, Y.-J.; Liu, W.-F.; Lee, C.-T.

2004-01-01

In this study, we investigated the 248 nm excimer-laser-induced activation of the Mg-doped GaN layers. According to the observed photoluminescence results and the x-ray photoelectron spectroscopy measurements, we found that the dissociation of the Mg-H complexes and the formation of hydrogenated Ga vacancies (i.e., V Ga H 2 ) and/or the Ga vacancies occupied by interstitial Mg during the laser irradiation process, led to an increase in the hole concentration

The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

Science.gov (United States)

Narita, Tetsuo; Tokuda, Yutaka; Kogiso, Tatsuya; Tomita, Kazuyoshi; Kachi, Tetsu

2018-04-01

We investigated traps in lightly Mg-doped (2 × 1017 cm-3) p-GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on a freestanding GaN substrate and the subsequent post-growth annealing, using deep level transient spectroscopy. We identified four hole traps with energy levels of EV + 0.46, 0.88, 1.0, and 1.3 eV and one electron trap at EC - 0.57 eV in a p-type GaN layer uniformly doped with magnesium (Mg). The Arrhenius plot of hole traps with the highest concentration (˜3 × 1016 cm-3) located at EV + 0.88 eV corresponded to those of hole traps ascribed to carbon on nitrogen sites in n-type GaN samples grown by MOVPE. In fact, the range of the hole trap concentrations at EV + 0.88 eV was close to the carbon concentration detected by secondary ion mass spectroscopy. Moreover, the electron trap at EC - 0.57 eV was also identical to the dominant electron traps commonly observed in n-type GaN. Together, these results suggest that the trap states in the lightly Mg-doped GaN grown by MOVPE show a strong similarity to those in n-type GaN, which can be explained by the Fermi level close to the conduction band minimum in pristine MOVPE grown samples due to existing residual donors and Mg-hydrogen complexes.

Oxygen permeability of transition metal-containing La(Sr,PrGa(MgO3-δ ceramic membranes

Directory of Open Access Journals (Sweden)

Frade, J. R.

2004-08-01

Full Text Available Acceptor-type doping of perovskite-type La1-xSrxGa0.80-yMgyM0.20O3-δ (x = 0-0.20, y = 0.15-0.20, M = Fe, Co, Ni leads to significant enhancement of ionic conductivity and oxygen permeability due to increasing oxygen vacancy concentration. The increase in strontium and magnesium content is accompanied, however, with increasing role of surface exchange kinetics as permeation-limiting factor. At temperatures below 1223 K, the oxygen permeation fluxes through La(SrGa(Mg,MO3-δ membranes with thickness less than 1.5 mm are predominantly limited by the exchange rates at membrane surface. The oxygen transport in transition metal-containing La(SrGa(MgO3-δ ceramics increase in the sequence Co El dopado aceptor de cerámicas tipo perovskita La1-xSrxGa0.80-yMgyM0.20O3-δ (x = 0-0.20, y = 0.15-0.20, M = Fe, Co, Ni da lugar a una mejora significativa de la conductividad iónica y de la permeabilidad al oxígeno debido al aumento de la concentración de vacantes de oxígeno. Sin embargo, el aumento de la cantidad de estroncio y magnesio viene acompañado de un aumento de la participación de las cinéticas de intercambio superficial como factor limitante de la permeabilidad. A temperaturas por debajo de 1223 K la permeabilidad al flujo de oxígeno a través de las membranas de La(SrGa(Mg,MO3-δ con espesor menor de 1.5 mm está limitado principalmente por las velocidades de intercambio en la superficie de la membrana. El transporte de oxígeno en las cerámicas La(SrGa(MgO3-δ que contienen M aumenta en la secuencia Co < Fe < Ni. La conductividad iónica en estas fases es, sin embargo, menor que en la de los compuestos La1-xSrxGa1-yMgyO3-δ. El mayor nivel de permeabilidad de oxígeno, comparable a la de las fases basadas en La(SrFe(CoO3 y La2NiO4, se observa para las membranas de La0.90Sr0.10Ga0.65Mg0.15Ni0.20O3-δ. Los coeficientes de dilatación térmica medios de las cerámicas La(SrGa(Mg,MO3-δ en aire son del orden de (11.6–18.4 × 10-6 K-1 a 373

Mg Incorporation Efficiency in Pulsed MOCVD of N-Polar GaN:Mg

Science.gov (United States)

Marini, Jonathan; Mahaboob, Isra; Hogan, Kasey; Novak, Steve; Bell, L. D.; Shahedipour-Sandvik, F.

2017-10-01

We report on the effect of growth polarity and pulsed or δ -doped growth mode on impurity incorporation in metalorganic chemical vapor deposition-grown GaN. In Ga-polar orientation, up to 12× enhancement in Mg concentration for given Mg flow rate is observed, resulting in enhanced p-type conductivity for these samples. In contrast, this enhancement effect is greatly diminished for N-polar samples, falling off with increasing Mg flow and showing maximum enhancement of 2.7× at 30 nmol/min Mg flow. At higher Mg flow rates, Mg incorporation at normal levels did not correspond to p-type conductivity, which may be due to Mg incorporation at nonacceptor sites. Concentrations of C, O, and Si were also investigated, revealing dependence on Mg flow in N-polar pulsed samples. Carbon incorporation was found to decrease with increasing Mg flow, and oxygen incorporation was found to remain high across varied Mg flow. These effects combine to result in N-polar samples that are not p-type when using the pulsed growth mode.

Modification of GaN(0001) growth kinetics by Mg doping

International Nuclear Information System (INIS)

Monroy, E.; Andreev, T.; Holliger, P.; Bellet-Amalric, E.; Shibata, T.; Tanaka, M.; Daudin, B.

2004-01-01

We have studied the effect of Mg doping on the surface kinetics of GaN during growth by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface of GaN, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN. The growth window is hence significantly reduced. Higher growth temperatures lead to an enhancement of Mg segregation and an improvement of the surface morphology

Germinação de sementes de atemoia (Annona Cherimola Mill. x A. squamosa L. cv 'Gefner' submetidas a tratamentos com ácido Giberélico (GA3 e ethephon Germination of atemoya seeds (Annona Cherimola Mill. x A. squamosa L. cv 'Gefner' subjected to treatments with Gibberellic acid (GA3 and ethephon

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Marcos Campos de Oliveira

2010-06-01

Full Text Available O objetivo deste trabalho foi estudar os efeitos do ácido giberélico (GA3, do ethephon e da interação de ambos os reguladores vegetais no processo germinativo de sementes de atemoia (Annona cherimola Mill. x A. squamosa L. , cultivar 'Gefner'. Empregou-se delineamento experimental inteiramente casualizado, em esquema fatorial 5², com os tratamentos constituídos pela combinação de cinco concentrações de GA3 (ácido giberélico e cinco concentrações de ethephon, resultando em 25 tratamentos, com quatro repetições de 25 sementes por parcela. As concentrações de GA3 empregadas foram: 0; 250; 500; 750 e 1.000 mg L-1 i.a.e de ethephon: 0; 25; 50; 75 e 100 mg L-1 i.a.. Os tratamentos com os reguladores vegetais foram aplicados na semente por imersão das mesmas nas soluções de GA3 e ethephon por período de 36 horas. As sementes foram semeadas em rolo de papel germitest e levadas à câmara de germinação onde permaneceram no escuro, com temperatura alternada entre 20ºC por 8 horas e 30ºC por 16 horas. As variáveis avaliadas foram: percentagem, tempo e índice de velocidade de germinação, percentagem de plântulas normais e percentagem de sementes dormentes. Existe interação da ação dos reguladores vegetais estudados no processo germinativo de sementes de atemoia, o que permite concluir que a percentagem de germinação de sementes de atemoia (Annona cherimola Mill. x A. squamosa L. cv 'Gefner' é aumentada com o emprego de 778 mg L-1 de GA3, enquanto a associação entre elevadas concentrações de GA3 e 75 a 100 mg L-1 de ethephon incrementam o índice de velocidade de germinação e a percentagem de plântulas normais.The aim of this work was to evaluate the effect of gibberellic acid (GA3 and ethephon, besides the interaction of both plant growth regulators, on the germinative process of atemoya seeds (Annona cherimola Mill. X A. squamosa L., cultivar 'Gefner'. Experimental design was completely randomized, in a 5�

Yb{sub 6}Ir{sub 5}Ga{sub 7} - a MgZn{sub 2} superstructure

Energy Technology Data Exchange (ETDEWEB)

Seidel, Stefan; Poettgen, Rainer [Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster, Corrensstrasse 30, 48149, Muenster (Germany)

2017-02-15

The gallide Yb{sub 6}Ir{sub 5}Ga{sub 7} was synthesized by high-frequency melting of the elements in a sealed niobium ampoule. The structure was refined from single-crystal X-ray diffractometer data: Nb{sub 6.4}Ir{sub 4}Al{sub 7.6} type, P6{sub 3}/mcm, a = 930.4(1), c = 843.0(1) pm, wR{sub 2} = 0.0597, 379 F{sup 2} values and 22 variables. Yb{sub 6}Ir{sub 5}Ga{sub 7} adopts a superstructure of the MgZn{sub 2} Laves phase by a complete ordering of the iridium and gallium atoms on the zinc substructure, i.e. the network consists of ordered and condensed Ir{sub 3}Ga and IrGa{sub 3} tetrahedra with Ir-Ga distances ranging from 260 to 265 pm. The crystal chemical details and the underlying group-subgroup scheme are discussed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Fabrication and Characterization of Mg-Doped GaN Nanowires

International Nuclear Information System (INIS)

Dong-Dong, Zhang; Cheng-Shan, Xue; Hui-Zhao, Zhuang; Ying-Long, Huang; Zou-Ping, Wang; Ying, Wang; Yong-Fu, Guo

2008-01-01

Mg-doped GaN nanowires have been synthesized by ammoniating Ga 2 O 3 films doped with Mg under flowing ammonia atmosphere at 850° C. The Mg-doped GaN nanowires are characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photo-luminescence (PL). The results demonstrate that the nanowires are single crystalline with hexagonal wurzite structure. The diameters of the nanowires are 20–30 nm and the lengths are 50–100 μm. The GaN nanowires show three emission bands with well-defined PL peak at 3.45 eV, 3.26 eV, 2.95 eV, respectively. The large distinct blueshift of the bandgap emission can be attributed to the Burstein–Moss effect. The peak at 3.26 eV represents the transition from the conduction-band edge to the acceptor level AM (acceptor Mg). The growth mechanism of crystalline GaN nanowires is discussed briefly. (cross-disciplinary physics and related areas of science and technology)

Efeitos do CPPU e GA3 no cultivo de uva-'Itália' na região do submédio São Francisco, nordeste do Brasil Effect of CPPU and GA3 in grapes 'Itália' in Submedium São Francisco River Valley region, northeast Brazil

Directory of Open Access Journals (Sweden)

CARLOS AUGUSTO MENEZES FEITOSA

2002-08-01

Full Text Available Na região do submédio do São Francisco, a uva-'Itália' destaca-se com 63,2% da área total plantada. Atualmente, é a principal variedade para exportação. O objetivo principal deste trabalho foi avaliar o efeito das doses do CPPU (forchlorfenuron e GA3, no aumento do tamanho da baga, que foram aplicadas por meio de pulverização dirigida sobre os cachos durante a fase de pegamento dos frutos, quando as bagas haviam atingido, aproximadamente, 8 mm de diâmetro. Este experimento foi conduzido na Fazenda Cooperyama, no município de Juazeiro-BA. O delineamento experimental foi o inteiramente casualizado, com oito tratamentos e três repetições, avaliando-se 15 cachos por tratamento com as seguintes doses: 1- Testemunha absoluta; 2- GA3 20 mg/l;3- GA3 20 mg/l+ CPPU 3 mg/l; 4- GA3 20 mg/l + CPPU 5 mg/l; 5- GA3 20 mg/l + CPPU 10 mg/l; 6- CPPU 3 mg/l; 7- CPPU 5 mg/l; 8- CPPU 10 mg/l.O melhor resultado obtido no crescimento da baga deu-se com a aplicação do CPPU 10 mg/l. Este tratamento diferiu significativamente da testemunha e da aplicação convencional com GA3 20 mg/l, aumentando 8% e 4,6% o comprimento da baga, 13,6% e 7,3% sua largura, e o peso de baga em 32% e 16,3%, respectivamente. Nos tratamentos com CPPU aplicado isoladamente e/ou associado com GA3, a colheita foi retardada em oito dias. Não se verificou diferença significativa para os teores de sólidos solúveis; no entanto, foi constatado que a acidez titulável obteve valores mais elevados na testemunha e no tratamento com GA3, aplicando 20 mg/l. Com relação ao peso do engaço, não foi verificada diferença estatística entre os tratamentos.The Itália grape cultivar participates with 63,2% of the total growing area in Submedium São Francisco River Valley it's the main variety for exportation. The main objective in this work was to evaluate the effect of CPPU (forchlorfenuron and GA3 doses on the berry size increase. The products were applied by spraying them on the

Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

International Nuclear Information System (INIS)

Li Ming; Wang Yong; Wong Kai-Ming; Lau Kei-May

2014-01-01

High-performance low-leakage-current AlGaN/GaN high electron mobility transistors (HEMTs) on silicon (111) substrates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10 −8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated

Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

International Nuclear Information System (INIS)

Li Xiao-Jing; Zhao De-Gang; Jiang De-Sheng; Chen Ping; Zhu Jian-Jun; Liu Zong-Shun; Yang Jing; He Xiao-Guang; Yang Hui; Zhang Li-Qun; Zhang Shu-Ming; Le Ling-Cong; Liu Jian-Ping

2015-01-01

The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p ++ -GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p ++ -GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p ++ -GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97× 10 −4 Ω·cm 2 is achieved. (paper)

Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Glaser, E.R.; Murthy, M.; Freitas, J.A.; Storm, D.F.; Zhou, L.; Smith, D.J.

2007-01-01

Low-temperature photoluminescence (PL) and optically detected magnetic resonance (ODMR) at 24 GHz have been performed on a series of MBE-grown Mg-doped (10 17 -10 20 cm -3 ) GaN homoepitaxial layers. High-resolution PL at 5 K revealed intense bandedge emission with narrow linewidths (0.2-0.4 meV) attributed to annihilation of excitons bound to shallow Mg acceptors. In contrast to many previous reports for GaN heteroepitaxial layers doped with [Mg]>3x10 18 cm -3 , the only visible PL observed was strong shallow donor-shallow acceptor recombination with zero phonon line at 3.27 eV. Most notably, ODMR on this emission from a sample doped with [Mg] of 1x10 17 cm -3 revealed the first evidence for the highly anisotropic g-tensor (g parallel ∼2.19, g perpendicular ∼0) expected for Mg shallow acceptors in wurtzite GaN. This result is attributed to the much reduced dislocation densities (≤5x10 6 cm -3 ) and Mg impurity concentrations compared to those characteristic of the more conventional investigated Mg-doped GaN heteroepitaxial layers

Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer

Science.gov (United States)

Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Liu, W.; Xing, Y.; Zhang, L. Q.; Wang, W. J.; Li, M.; Zhang, Y. T.; Du, G. T.

2018-01-01

In this work, the Cp2Mg flux and growth pressure influence to Mg doping concentration and depth profiles is studied. From the SIMS measurement we found that a transition layer exists at the bottom region of the layer in which the Mg doping concentration changes gradually. The thickness of transition layer decreases with the increases of Mg doping concentration. Through analysis, we found that this is caused by Ga memory effect which the Ga atoms stay residual in MOCVD system will react with Mg source, leading a transition layer formation and improve the growth rate. And the Ga memory effect can be well suppressed by increasing Mg doping concentration and growth pressure and thus get a steep Mg doping at the bottom region of p type layer.

Different annealing temperature suitable for different Mg doped P-GaN

Science.gov (United States)

Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Li, X.; Liu, W.; Zhang, L. Q.; Long, H.; Li, M.

2017-04-01

In this work, epitaxial GaN with different Mg doping concentration annealed at different temperature is investigated. Through Hall and PL spectra measurement we found that when Mg doping concentration is different, different annealing temperature is needed for obtaining the best p-type conduction of GaN, and this difference comes from the different influence of annealing on compensated donors. For ultra-heavily Mg doped sample, the process of Mg related donors transferring to non-radiative recombination centers is dominated, so the performance of P-GaN deteriorates with temperature increase. But for low Mg doped sample, the process of Mg related donors transfer to non-raditive recombination is weak compare to the Mg acceptor activation, so along the annealing temperature increase the performance GaN gets better.

Catalytic effect of Ni, Mg2Ni and Mg2NiH4 upon hydrogen desorption from MgH2

Czech Academy of Sciences Publication Activity Database

Čermák, Jiří; David, Bohumil

2011-01-01

Roč. 36, č. 21 (2011), s. 13614-13620 ISSN 0360-3199 R&D Projects: GA ČR GA106/09/0814; GA ČR(CZ) GAP108/11/0148 Institutional research plan: CEZ:AV0Z20410507 Keywords : MgH2 * Hydrogen storage * Hydrogen desorption * Catalysis Subject RIV: JG - Metallurgy Impact factor: 4.054, year: 2011

Efeitos de ácido giberélico e carvão ativado no cultivo in vitro de Citrus limonia Osbeck chiPoncirus trifoliata (L. Raf Effects of gibberellic acid (GA3 and activated coal on in vitro culture of Citrus limonia Osbeck chi Poncirus trifoliata L. Raf. Embryos

Directory of Open Access Journals (Sweden)

Valtemir Gonçalves Ribeiro

2000-01-01

Full Text Available Pesquisou-se o desenvolvimento in vitro de embriões de um híbrido do cruzamento Citrus limonia Osb. chi Poncirus trifoliata (L. Raf. em meio MS, acrescido de GA3 (0,0, 0,01, 0,1 e 1,0 mg/L e carvão ativado (0,0, 0,5, 1,0 e 2,0 g/L, em todas as combinações possíveis. Após a excisão das sementes os embriões obtidos, independentemente dos estádios, foram inoculados nos respectivos meios de cultura. Cada tratamento permaneceu por 48 horas no escuro e 40 dias em sala de crescimento à temperatura de 27 ± 1ºC, com 16 horas de luminosidade. Após esse período, as plântulas foram avaliadas, considerando-se o porcentual de sobrevivência e comprimento da haste caulinar e do sistema radicular. Verificou-se que a concentação de 0,1 mg/L de GA3 interagiu antagonicamente em meio de cultivo contendo até 2,0 g/L de carvão ativado. O GA3 a 0,01 mg/L associado a concentrações de carvão ativado a partir de 0,5 g/L até 2,0 g/L, maximizou o porcentual de sobrevivência dos em- briões. Os embriões apresentaram o maior comprimento de raiz (4,5 cm e da haste caulinar (2,1 cm com carvão ativado na concentração de 0,5 g/L e 2,0 g/L, respectivamente.This work utilized fruits of a single plant obtained from the cross between Citrus limonia Osb. chi Poncirus trifoliata L. Raf. Seeds were removed and after excision, all the embryos, regardless their development stages, were inoculated in MS medium added with GA3 (0.0, 0.01, 0.1 and 1.0 mg/L and activated coal (0.0, 0.5, 1.0 and 2.0 g/L in every possible combination. These treatments remained for 48 hours in the dark and afterwards in growth room at the temperature of 27 ± 1ºC with 16 hours lighting. After 40 days, seedlings were evaluated by the lengths of the aerial part and root system and percent of survival. The concentration of 0.1 mg/L of GA3 interacts negatively in culture medium containing up to 2.0 g/L of activated coal. The concentration of 0.01 mg/L of GA3 associated to activated coal

Electron paramagnetic resonance study of neutral Mg acceptors in β-Ga2O3 crystals

Science.gov (United States)

Kananen, B. E.; Halliburton, L. E.; Scherrer, E. M.; Stevens, K. T.; Foundos, G. K.; Chang, K. B.; Giles, N. C.

2017-08-01

Electron paramagnetic resonance (EPR) is used to directly observe and characterize neutral Mg acceptors ( M gGa0 ) in a β-Ga2O3 crystal. These acceptors, best considered as small polarons, are produced when the Mg-doped crystal is irradiated at or near 77 K with x rays. During the irradiation, neutral acceptors are formed when holes are trapped at singly ionized Mg acceptors ( M gGa- ). Unintentionally present Fe3+ (3d5) and Cr3+ (3d3) transition-metal ions serve as the corresponding electron traps. The hole is localized in a nonbonding p orbital on a threefold-coordinated oxygen ion adjacent to an Mg ion at a sixfold-coordinated Ga site. These M gGa0 acceptors (S = 1/2) have a slightly anisotropic g matrix (principal values are 2.0038, 2.0153, and 2.0371). There is also partially resolved 69Ga and 71Ga hyperfine structure resulting from unequal interactions with the two Ga ions adjacent to the hole. With the magnetic field along the a direction, hyperfine parameters are 2.61 and 1.18 mT for the 69Ga nuclei at the two inequivalent neighboring Ga sites. The M gGa0 acceptors thermally convert back to their nonparamagnetic M gGa- charge state when the temperature of the crystal is raised above approximately 250 K.

Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

International Nuclear Information System (INIS)

Sui Yan-Ping; Yu Guang-Hui

2011-01-01

We investigate undoped GaN and Mg-doped GaN grown by rf plasma-assisted molecular beam epitaxy (MBE) with different Mg concentrations by photoluminescence (PL) at low temperature, Hall-effect and XRD measurements. In the PL spectra of lightly Mg-doped GaN films, a low intensity near band edge (NBE) emission and strong donor-acceptor pair (DAP) emission with its phonon replicas are observed. As the Mg concentration is increased, the DAP and NBE bands become weaker and a red shift of these bands is observed in the PL spectra. Yellow luminescence (YL) is observed in heavily Mg-doped GaN. The x-ray diffraction is employed to study the structure of the films. Hall measurement shows that there is a maximum value (3.9 × 10 18 cm −3 ) of hole concentration with increasing Mg source temperature for compensation effect. PL spectra of undoped GaN are also studied under N-rich and Ga-rich growth conditions. Yellow luminescences of undoped Ga-rich GaN and heavily Mg-doped GaN are compared, indicating the different origins of the YL bands. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Ferromagnetism in 4H-GaN polytype doped by non-magnetic light elements Li, Be, B, C, O, F, Ne, Na, and Mg: Ab-initio study

International Nuclear Information System (INIS)

Torrichi, M.; Ferhat, M.; Bouhafs, B.

2016-01-01

Using density-functional theory within the generalized-gradient approximation, we explore the magnetic behavior induced by nonmagnetic impurity X atoms, such as Li, Be, B, C, O, F, Ne, Na, and Mg on cation site in 4H-GaN polytype. The results reveal that Ne doped 4H-GaN has the highest magnetic moment of 3µ B , whereas Mg doped 4H-GaN has the lowest magnetic moment of 0.75µ B . Among the systems studied 4H-GaN doped Ne has been found to be half-metallic, whereas 4H-GaN doped F and Na are found to be nearly half-metallic. The partial density of states evidence that magnetism is achieved through a p-p like coupling between the impurity and the host 2p states. Furthermore, we inspect whether there exists a relationship between the spin-polarization and the local structure around the doping X atoms. It is found that for all the compounds studied, the total magnetic moment increases with increasing the X–N bond lengths. Interestingly, 4H-GaN:Be becomes ferromagnetic with increasing the Be–N bond length, whereas 4H-GaN:Na and 4H-GaN:F become half-metallic with increasing Na–N and F–N bond lengths. - Highlights: • The partial densities of states of 4H-GaN polytype doped light nonmagnetic elements have been investigated. • We found that 4H-GaN:Ne is half metallic. • We found that N atoms induced strong local magnetic. • We found that doping with half-filled X-s impurity states promotes ferromagnetism. • We found that doping with full-filled X-s impurity annihilates ferromagnetism.

Atomic structure of defects in GaN:Mg grown with Ga polarity

International Nuclear Information System (INIS)

Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Hautakangas, S.; Laakso, A.; Saarinen, K.

2003-01-01

Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {11(und 2)3} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 ± 0.2(angstrom) displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base

Magnetic properties and potential barrier between crystallites model of MgGa2-xFexO4 ceramics

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V. A. dos S. Ribeiro

Full Text Available Abstract The aim of this work was to investigate the magnetic properties and the electrical conductivity temperature dependence associated to the potential barrier between the crystallites model. Gallium and magnesium containing spinel ceramic has low magnetic coercivity and high electrical resistivity. MgGa2-xFexO4 samples (x= 0.01, 0.05, 0.15, 0.25, 0.35 were prepared by solid-state method and sintered at 800 °C for 8 h. X-ray diffraction analysis confirmed the formation of a single phase with compact cubic spinel structure. The magnetic measurements show that the saturation magnetization and remanence of all samples increased with increasing iron concentration. The coercive field decreased up to the concentration x= 0.15, and above x= 0.25 it was observed an increase in the coercive field. Through electrical characterization it was found that the samples presented highly insulating behavior for x= 0.01, and further increase in x above 0.15 gives a semiconductor behavior compatible with the potential barrier between the crystallites model, i.e. fulfills the condition L/2 > LD (crystallite size L in comparison with the Debye length LD, and the conduction is limited by potential barriers between the crystallites.

Fabrication and interface electrical properties of Fe3O4/MgO/GaAs(100) spin contacts

NARCIS (Netherlands)

Wong, P.K.J.; Zhang, W.; Zhang, W.; Xu, Y.B.

2010-01-01

Moderately doped n-GaAs(100) substrates (n= 5 x 10 17cm3 ) with In Ohmic back contacts were annealed in the growth chamber with a base pressure of 1 x 10-8 mbar for 60 min at 830 K prior to the film stack growth. MgO layer was then grown by e-beam evaporation at a rate of 2 Amin-1 while the

Incorporation of Mg in Free-Standing HVPE GaN Substrates

Science.gov (United States)

Zvanut, M. E.; Dashdorj, J.; Freitas, J. A.; Glaser, E. R.; Willoughby, W. R.; Leach, J. H.; Udwary, K.

2016-06-01

Mg, the only effective p-type dopant for nitrides, is well studied in thin films due to the important role of the impurity in light-emitting diodes and high-power electronics. However, there are few reports of Mg in thick free-standing GaN substrates. Here, we demonstrate successful incorporation of Mg into GaN grown by hydride vapor-phase epitaxy (HVPE) using metallic Mg as the doping source. The concentration of Mg obtained from four separate growth runs ranged between 1016 cm-3 and 1019 cm-3. Raman spectroscopy and x-ray diffraction revealed that Mg did not induce stress or perturb the crystalline quality of the HVPE GaN substrates. Photoluminescence (PL) and electron paramagnetic resonance (EPR) spectroscopies were performed to investigate the types of point defects in the crystals. The near-band-edge excitonic and shallow donor-shallow acceptor radiative recombination processes involving shallow Mg acceptors were prominent in the PL spectrum of a sample doped to 3 × 1018 cm-3, while the EPR signal was also thought to represent a shallow Mg acceptor. Detection of this signal reflects minimization of nonuniform strain obtained in the thick free-standing HVPE GaN compared with heteroepitaxial thin films.

Embriogênese somática direta em explantes foliares de Coffea arabica L. cv. acaiá cerrado: efeito de cinetina e ácido giberélico Direct somatic embryogenesis in Coffea arabica L. cv. Acaiá Cerrado: kinetin and giberelic acid effects

Directory of Open Access Journals (Sweden)

Alba Regina Pereira

2007-04-01

Full Text Available Objetivou-se estudar o efeito da cinetina, GA3 e ANA na indução in vitro de embriões somáticos de cafeeiro pela via direta. Segmentos foliares retirados de plântulas cultivadas in vitro foram inoculados em meio de cultura 'MS' com 50% dos sais contendo as seguintes combinações de cinetina (0; 1; 2; 4 e 8 mg L-1 e GA3 (0; 2,5; 5; 10 e 20 mg L-1. Os meios de cultura utilizados tiveram pH ajustado para 5,8 ± 1 antes de serem autoclavados. O experimento foi mantido em sala de crescimento a 25 ± 1ºC. Avaliou-se número total de embriões somáticos, o número de embriões cotiledonares, o número de embriões torpedo e a média dos comprimentos dos embriões. A ação combinada entre cinetina, GA3 e ANA estimulou a indução de embriões somáticos pela via direta. O maior comprimento de embriões foi observado quando se utilizou 8 mg L-1 de cinetina e 8,0 mg L-1 de ANA ou 17 mg L-1 de GA3 e 8,0 mg L-1 de ANA isoladamente.It was aimed to study kinetin, GA3 and ANA effects in the in vitro induction of direct somatics embryos. Leaf segments withdrawn from plantlets in vitro were inoculated in 'MS'50% containing the following combination of kinetin (0; 1; 2; 4 and 8 mg L-1 and GA3 (0; 2,5; 5; 10 and 20 mg L-1. The culture media utilized had their pH adjusted to 5,8 ± 1 before being autoclaved. The experiment was carried out growth room at 25 ± 1ºC. Total number of embryos, number of embryos cotiledonar, number of embryos of torped and length of embryo were evaluated. The combination between kinetin and GA3 promoved induction of embryos. The use of kinetin 8 mg L-1 and GA3 17 mg L-1 not associate in medium with 8,0mg L-1 of ANA, promoter higher rates in vitro.

Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate

Science.gov (United States)

Chichibu, S. F.; Shima, K.; Kojima, K.; Takashima, S.; Edo, M.; Ueno, K.; Ishibashi, S.; Uedono, A.

2018-05-01

Complementary time-resolved photoluminescence and positron annihilation measurements were carried out at room temperature on Mg-doped p-type GaN homoepitaxial films for identifying the origin and estimating the electron capture-cross-section ( σ n ) of the major nonradiative recombination centers (NRCs). To eliminate any influence by threading dislocations, free-standing GaN substrates were used. In Mg-doped p-type GaN, defect complexes composed of a Ga-vacancy (VGa) and multiple N-vacancies (VNs), namely, VGa(VN)2 [or even VGa(VN)3], are identified as the major intrinsic NRCs. Different from the case of 4H-SiC, atomic structures of intrinsic NRCs in p-type and n-type GaN are different: VGaVN divacancies are the major NRCs in n-type GaN. The σ n value approximately the middle of 10-13 cm2 is obtained for VGa(VN)n, which is larger than the hole capture-cross-section (σp = 7 × 10-14 cm2) of VGaVN in n-type GaN. Combined with larger thermal velocity of an electron, minority carrier lifetime in Mg-doped GaN becomes much shorter than that of n-type GaN.

Mg doping and its effect on the semipolar GaN(1122) growth kinetics

International Nuclear Information System (INIS)

Lahourcade, L.; Wirthmueller, A.; Monroy, E.; Pernot, J.; Chauvat, M. P.; Ruterana, P.; Laufer, A.; Eickhoff, M.

2009-01-01

We report the effect of Mg doping on the growth kinetics of semipolar GaN(1122) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(1122). We observe an enhancement of Mg incorporation in GaN(1122) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.

Optical and electrical properties of heterostructures Zn{sub 1-x}Mg{sub x}Se crystallized on ZnTe and GaAs crystals by MBE method; Wlasnosci optyczne i elektryczne heterostruktur Zn{sub 1-x}Mg{sub x}Se krystalizowanych metoda MBE w krysztalach ZnTe i GaAs

Energy Technology Data Exchange (ETDEWEB)

Gapinski, A; Glowacki, G; Bala, W [Uniwersytet Mikolaja Kopernika, Torun (Poland). Inst. Fizyki

1997-12-01

Triple component mixing crystals Zn{sub 1-x}Mg{sub x}Se have been crystallized on ZnTe and GaAs monocrystals by means of molecular beam epitaxy method. The optical and electrical properties of such structures with different magnesium content have been studied. The applicability for optoelectronial and light-pipe use have been discussed as well. 6 refs, 4 figs.

Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS

International Nuclear Information System (INIS)

Bennett, S E; Kappers, M J; Barnard, J S; Humphreys, C J; Oliver, R A; Clifton, P H; Ulfig, R M

2010-01-01

P-type conducting layers are critical in GaN-based devices such as LEDs and laser diodes. Such layers are often produced by doping GaN with Mg, but the hole concentration can be enhanced using AlGaN/GaN p-type superlattices by exploiting the built-in polarisation fields. A Mg-doped AlGaN/GaN superlattice was studied using SIMS. Although the AlGaN and GaN were nominally doped to the same level, the SIMS data suggested a difference in doping density between the two materials. Atom probe tomography was then used to investigate the Mg distribution. The superlattice repeats were clearly visible, as expected and, in addition, significant Mg clustering was observed in both the GaN and AlGaN layers. There were many more Mg clusters in the AlGaN layers than the GaN layers, accounting for the difference in doping density suggested by SIMS. To evaluate the structural accuracy of the atom probe reconstruction, layer thicknesses from the atom probe were compared with STEM images. Finally, future work is proposed to investigate the Mg clusters in the TEM.

Stabilization and enhanced energy gap by Mg doping in ɛ-phase Ga2O3 thin films

Science.gov (United States)

Bi, Xiaoyu; Wu, Zhenping; Huang, Yuanqi; Tang, Weihua

2018-02-01

Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE) technique. X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and ultraviolet-visible (UV-vis) absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ɛ-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ˜ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

Study of Cs adsorption on Ga(Mg)0.75Al0.25N (0 0 0 1) surface: A first principle calculation

International Nuclear Information System (INIS)

Yang, Mingzhu; Chang, Benkang; Hao, Guanghui; Guo, Jing; Wang, Honggang; Wang, Meishan

2013-01-01

In order to study the activation process of Ga 1−x Al x N photocathodes theoretically, models of Cs adsorption on Ga(Mg) 0.75 Al 0.25 N (0 0 0 1) surface are built, then the atomic structure, electronic structure, adsorption energy, work function, dipole moment and optical properties of the models are calculated. All calculations are carried out using Cambridge Serial Total Energy Package (CASTEP) based on first principle. Results show that Cs adsorption on Mg doping Ga 1−x Al x N (0 0 0 1) surface can reduce work function of the surface, and the favorite adsorption site is on the top of p-type impurity. Cs adsorption on p-type Ga 1−x Al x N (0 0 0 1) surface can produce the structure of p-type bulk with n-type surface, which is helpful to surface band bend downward and decrease electron affinity seriously. The absorption coefficient of Cs adsorption system is less than that of the clean surface. Theoretical study of Cs adsorption on Ga 1−x Al x N (0 0 0 1) surface can help to improve activation technology of Ga 1−x Al x N photocathodes.

Research of acceptor impurity thermal activation in GaN: Mg epitaxial layers

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Aleksandr V. Mazalov

2016-06-01

The effect of thermal annealing of GaN:Mg layers on acceptor impurity activation has been investigated. Hole concentration increased and mobility decreased with an increase in thermal annealing temperature. The sample annealed at 1000 °C demonstrated the lowest value of resistivity. Rapid thermal annealing (annealing with high heating speed considerably improved the efficiency of Mg activation in the GaN layers. The optimum time of annealing at 1000 °C has been determined. The hole concentration increased by up to 4 times compared to specimens after conventional annealing.

Magnesium doped gallium phosphonates Ga{sub 1-x}Mg{sub x}[H{sub 3+x}(O{sub 3}PCH{sub 2}){sub 3}N] (x = 0, 0.20) and the influence on proton conductivity

Energy Technology Data Exchange (ETDEWEB)

Homburg, Thomas; Reinsch, Helge; Stock, Norbert [Institut fuer Anorganische Chemie, Christian-Albrechts-Universitaet, Kiel (Germany); Tschense, Carsten B.L.; Senker, Juergen [Dept. of Inorganic Chemistry III, University of Bayreuth (Germany); Wolkersdoerfer, Konrad; Wark, Michael [Institut fuer Chemie, Carl von Ossietzky Universitaet Oldenburg (Germany); Toebbens, Daniel; Zander, Stefan [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany)

2018-02-01

In our contribution to the development of new proton conductive coordination polymers (CPs) we focus on the impact of a partial replacement of Ga{sup 3+} by Mg{sup 2+}. This approach should come along with the introduction of additional protons due to charge balances. In a first step we have synthesized an isostructural compound to the literature known compound AlH{sub 3}P3N [H{sub 6}P3N = nitrilotris(methylene)triphosphonic acid], where Al{sup 3+} is replaced by Ga{sup 3+}, since all attempts to incorporate Mg{sup 2+} ions directly into AlH{sub 3}P3N were not successful. The relative amount of Mg{sup 2+} and Ga{sup 3+} was established by EDX analysis. Rietveld refinement of the synchrotron data located the Ga{sup 3+} and Mg{sup 2+} ions on a split position, proving the disordered incorporation of the Mg{sup 2+} ions. Solid-state NMR spectroscopy confirms a disordered protonation of the phosphonate groups as well and shows that all amine groups are protonated. In order to investigate the effect on the proton conductivity the compounds Ga[H{sub 3}(O{sub 3}PCH{sub 2}){sub 3}N], denoted GaH{sub 3}P3N as well as Ga{sub 0.80}Mg{sub 0.20}[H{sub 3.20}(O{sub 3}PCH{sub 2}){sub 3}N], denoted GaMgH{sub 3.20}P3N, were characterized by electrochemical impedance spectroscopy (EIS). Arrhenius behavior in the investigated temperature range (70-130 C) was found for both compounds (activation energies of E{sub a} = 0.15 eV for GaH{sub 3}P3N and 0.17 eV for GaMgH{sub 3.20}P3N). The GaMgH{sub 3.20}P3N sample shows a reduced proton mobility (σ = 1.2 x 10{sup -4} S.cm{sup -1}) of about one order of magnitude in comparison to GaH{sub 3}P3N (σ = 1.0 x 10{sup -3} S.cm{sup -1}). (copyright 2018 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

A pulverização pré-colheita com ácido giberélico (GA3 e aminoetoxivinilglicina (AVG retarda a maturação e reduz as perdas de frutos na cultura do pessegueiro Preharvest spraying with gibberellic acid (GA3 and aminoethoxyvinilglycine (AVG delays fruit maturity and reduces fruit losses on peaches

Directory of Open Access Journals (Sweden)

Cassandro Vidal Talamini do Amarante

2005-04-01

Full Text Available Este trabalho objetivou avaliar os efeitos da pulverização pré-colheita com ácido giberélico (GA3 e aminoetoxivinilglicina (AVG na queda pré-colheita, maturação e qualidade de pêssegos, da cultivar Rubidoux. O delineamento experimental foi em blocos inteiramente casualizados, com quatro repetições, consistindo de seis tratamentos, resultantes da combinação de duas doses de GA3 (0 e 100 mg L-1 e três doses de AVG (0; 75 e 150 mg L-1. O GA3 e o AVG foram pulverizados cerca de seis e três semanas antes do início da colheita comercial dos frutos, respectivamente. Tratamentos envolvendo a combinação de GA3 (100 mg L-1 e AVG (75 e 150 mg L-1 retardaram a maturação dos frutos na colheita e durante o armazenamento refrigerado (4 semanas a 0-2ºC/90-95% UR, ocasionando maior retenção de cor verde da casca, menor redução da firmeza de polpa, menor aumento no teor de sólidos solúveis totais e menor redução na acidez titulável. De forma geral, os efeitos mais expressivos foram observados para tratamentos com GA3 100 mg L-1 do que para tratamentos com AVG 75 e 150 mg L-1. O tratamento com GA3 100 mg L-1 também reduziu o número de frutos com rachaduras e podridões, aumentou o peso médio de frutos na colheita e reduziu a incidência de escurecimento da polpa após armazenamento refrigerado. O AVG aumentou a incidência de frutos rachados.This research had the objective of studying the effects of preharvest spraying with gibberellic acid (GA3 and aminoethoxyvinilglycine (AVG on preharvest fruit drop, fruit maturity and fruit quality of peach, cultivar Rubidoux. The experiment consisted of a randomized complete block design, with four replicates, comprising six treatments derived from combinations of two doses of GA3 (0 and 100 mg L-1 and three doses of AVG (0, 75, and 150 mg L-1. GA3 and AVG were sprayed about six and three weeks before commercial fruit harvest, respectively. Treatments with GA3 (100 mg L-1 and AVG (75 and 150

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

Science.gov (United States)

Horita, Masahiro; Takashima, Shinya; Tanaka, Ryo; Matsuyama, Hideaki; Ueno, Katsunori; Edo, Masaharu; Takahashi, Tokio; Shimizu, Mitsuaki; Suda, Jun

2017-03-01

Mg-doped p-type gallium nitride (GaN) layers with doping concentrations in the range from 6.5 × 1016 cm-3 (lightly doped) to 3.8 × 1019 cm-3 (heavily doped) were investigated by Hall-effect measurement for the analysis of hole concentration and mobility. p-GaN was homoepitaxially grown on a GaN free-standing substrate by metalorganic vapor-phase epitaxy. The threading dislocation density of p-GaN was 4 × 106 cm-2 measured by cathodoluminescence mapping. Hall-effect measurements of p-GaN were carried out at a temperature in the range from 130 to 450 K. For the lightly doped p-GaN, the acceptor concentration of 7.0 × 1016 cm-3 and the donor concentration of 3.2 × 1016 cm-3 were obtained, where the compensation ratio was 46%. We also obtained the depth of the Mg acceptor level to be 220 meV. The hole mobilities of 86, 31, 14 cm2 V-1 s-1 at 200, 300, 400 K, respectively, were observed in the lightly doped p-GaN.

Discovering a Defect that Imposes a Limit to Mg Doping in p-Type GaN

International Nuclear Information System (INIS)

Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; O'Keefe, M.A.

2006-01-01

Gallium nitride (GaN) is the III-V semiconductor used to produce blue light-emitting diodes (LEDs) and blue and ultraviolet solid-state lasers. To be useful in electronic devices, GaN must be doped with elements that function either as electron donors or as acceptors to turn it into either an n-type semiconductor or a p-type semiconductor. It has been found that GaN can easily be grown with n-conductivity, even up to large concentrations of donors--in the few 10 19 cm -3 range. However, p-doping, the doping of the structure with atoms that provide electron sinks or holes, is not well understood and remains extremely difficult. The only efficient p-type dopant is Mg, but it is found that the free hole concentration is limited to 2 x 10 18 cm -3 , even when Mg concentrations are pushed into the low 10 19 cm -3 range. This saturation effect could place a limit on further development of GaN based devices. Further increase of the Mg concentration, up to 1 x 10 20 cm -3 leads to a decrease of the free hole concentration and an increase in defects. While low- to medium-brightness GaN light-emitting diodes (LEDs) are remarkably tolerant of crystal defects, blue and UV GaN lasers are much less so. We used electron microscopy to investigate Mg doping in GaN. Our transmission electron microscopy (TEM) studies revealed the formation of different types of Mg-rich defects [1,2]. In particular, high-resolution TEM allowed us to characterize a completely new type of defect in Mg-rich GaN. We found that the type of defect depended strongly on crystal growth polarity. For crystals grown with N-polarity, planar defects are distributed at equal distances (20 unit cells of GaN); these defects can be described as inversion domains [1]. For growth with Ga-polarity, we found a different type of defect [2]. These defects turn out to be three-dimensional Mg-rich hexagonal pyramids (or trapezoids) with their base on the (0001) plane and their six walls formed on {1123} planes (Fig. 1a). In

Stabilization and enhanced energy gap by Mg doping in ε-phase Ga2O3 thin films

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Xiaoyu Bi

2018-02-01

Full Text Available Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE technique. X-ray diffraction (XRD, x-ray photoelectron spectroscopy (XPS and ultraviolet-visible (UV-vis absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ε-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ∼ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

Physiological Responses and Fruit Retention of Carambola Fruit (Averrhoa carambola L. Induced by 2,4-D and GA3

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BEKTI KURNIAWATI

2009-03-01

Full Text Available One of the problems in cultivation of carambola fruit is the high of flower and fruit drop during fruit development. To understand these problems and to improve fruit retention, the content of indole-3-acetic acid (IAA and total sugar in carambola fruit and leaves were analysed in response to application of gibberellic acid (GA3 and 2,4-dichlorophenoxyacetic acid (2,4-D. The experiments used 1,5 year old of carambola plants (Averrhoa carambola L. var Dewi grown in polybag of 40 x 50 cm. GA3 with the concentration of 0, 20, 40, and 60 ppm and 2,4-D of 0, 5, 10, and 15 ppm were applied to the flower and the supporting leaves of carambola plant. The parameters analysed were number of flower drop, fruit formation, fruit retention, number of harvestable fruit per cluster, fruit weight per cluster, the content of sugar in the leaves and IAA in the fruit. The result showed that IAA content of the fruit increased in response to single as well as combination of GA3 and 2,4-D application. Sugar content of the leaves also increased in response to GA3 and 2,4-D application; however, the pattern was different with that of IAA. The best treatment to improve fruit retention was a single application of 10 ppm 2,4-D or 60 ppm GA3, and combined application of 5 ppm 2,4-D and 60 ppm GA3.

Magnetic properties and potential barrier between crystallites model of MgGa{sub 2-x}Fe{sub x}O{sub 4} ceramics

Energy Technology Data Exchange (ETDEWEB)

Ribeiro, V.A. dos S.; Rubinger, R.M.; Oliveira, A.F.; Mendonca, C.S.P.; Silva, M.R. da, E-mail: vanderalkmin@gmail.com, E-mail: rero@unifei.edu.br, E-mail: adhimarflavio@unifei.edu.br, E-mail: sales.claudiney21@gmail.com, E-mail: mrsilva@unifei.edu.br [Universidade Federal de Itajuba (UNIFEI), MG (Brazil). Instituto de Fisica e Quimica

2016-10-15

The aim of this work was to investigate the magnetic properties and the electrical conductivity temperature dependence associated to the potential barrier between the crystallites model. Gallium and magnesium containing spinel ceramic has low magnetic coercivity and high electrical resistivity. MgGa{sub 2-x}Fe{sub x}O{sub 4} samples (x= 0.01, 0.05, 0.15, 0.25, 0.35) were prepared by solid-state method and sintered at 800 °C for 8 h. X-ray diffraction analysis confirmed the formation of a single phase with compact cubic spinel structure. The magnetic measurements show that the saturation magnetization and remanence of all samples increased with increasing iron concentration. The coercive field decreased up to the concentration x= 0.15, and above x= 0.25 it was observed an increase in the coercive field. Through electrical characterization it was found that the samples presented highly insulating behavior for x= 0.01, and further increase in x above 0.15 gives a semiconductor behavior compatible with the potential barrier between the crystallites model, i.e. fulfills the condition L/2 > L{sub D} (crystallite size L in comparison with the Debye length L{sub D}), and the conduction is limited by potential barriers between the crystallites. (author)

Phase constitution in Sr and Mg doped LaGaO3 system

International Nuclear Information System (INIS)

Zheng Feng; Bordia, Rajendra K.; Pederson, Larry R.

2004-01-01

Sr and Mg doped lanthanum gallate perovskites (La 1-x Sr x Ga 1-y Mg y O 3-δ , shortened as LSGM-XY where X and Y are the doping levels in mole percentage (mol%) at the La- or A-site and the Ga- or B-site, respectively) are promising electrolyte materials for intermediate temperature solid oxide fuel cells (SOFCs). In this study, we have investigated the primary perovskites as well as the secondary phases formed in terms of doping content changes and A/B ratio variations in these materials. Fifteen powder compositions (three doping levels, X=Y=0, 0.1, and 0.2 mol; and five A/B ratios 0.95, 0.98, 1.00, 1.02, and 1.05) were synthesized by the glycine-nitrate combustion process (GNP). These powders were equilibrated by calcining at 1500 deg. C for 9 h prior to crystalline phase characterization by X-ray powder diffraction (XRD). From the results of this study and the available phase diagrams in the literature on constituent binary oxide systems, we propose a crystalline phase diagram of the La 2 O 3 -SrO-Ga 2 O 3 -MgO quaternary system at elevated temperature (1500 deg. C)

Relationship of metabolic syndrome and its components with -844 G/A and HindIII C/G PAI-1 gene polymorphisms in Mexican children

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De la Cruz-Mosso Ulises

2012-03-01

Full Text Available Abstract Background Several association studies have shown that -844 G/A and HindIII C/G PAI-1 polymorphisms are related with increase of PAI-1 levels, obesity, insulin resistance, glucose intolerance, hypertension and dyslipidemia, which are components of metabolic syndrome. The aim of this study was to analyze the allele and genotype frequencies of these polymorphisms in PAI-1 gene and its association with metabolic syndrome and its components in a sample of Mexican mestizo children. Methods This study included 100 children with an age range between 6-11 years divided in two groups: a 48 children diagnosed with metabolic syndrome and b 52 children metabolically healthy without any clinical and biochemical alteration. Metabolic syndrome was defined as the presence of three or more of the following criteria: fasting glucose levels ≥ 100 mg/dL, triglycerides ≥ 150 mg/dL, HDL-cholesterol th percentile, systolic blood pressure (SBP and diastolic blood pressure (DBP ≥ 95th percentile and insulin resistance HOMA-IR ≥ 2.4. The -844 G/A and HindIII C/G PAI-1 polymorphisms were analyzed by PCR-RFLP. Results For the -844 G/A polymorphism, the G/A genotype (OR = 2.79; 95% CI, 1.11-7.08; p = 0.015 and the A allele (OR = 2.2; 95% CI, 1.10-4.43; p = 0.015 were associated with metabolic syndrome. The -844 G/A and A/A genotypes were associated with increase in plasma triglycerides levels (OR = 2.6; 95% CI, 1.16 to 6.04; p = 0.02, decrease in plasma HDL-cholesterol levels (OR = 2.4; 95% CI, 1.06 to 5.42; p = 0.03 and obesity (OR = 2.6; 95% CI, 1.17-5.92; p = 0.01. The C/G and G/G genotypes of the HindIII C/G polymorphism contributed to a significant increase in plasma total cholesterol levels (179 vs. 165 mg/dL; p = 0.02 in comparison with C/C genotype. Conclusions The -844 G/A PAI-1 polymorphism is related with the risk of developing metabolic syndrome, obesity and atherogenic dyslipidemia, and the HindIII C/G PAI-1 polymorphism was associated with the

Electronic structures and optical properties of GaN nanotubes with MgGa–ON co-doping

International Nuclear Information System (INIS)

Yang, Mao; Shi, Jun-jie; Zhang, Min; Zhang, Shuai; Bao, Zhi-qiang; Luo, Shao-jun; Zhou, Tie-Cheng; Zhu, Tian-cong; Li, Xiang; Li, Jia

2013-01-01

Both the electronic structures and the optical properties of single-walled zigzag GaN nanotubes (NTs) with Mg Ga –O N co-doping are investigated using first-principles calculations. We find that the Mg Ga –O N defect complex can exist stably in GaN NTs. The direct band gap width of the GaN NTs can be reduced by means of the Mg Ga –O N co-doping. The electrons of the valence band maximum (VBM) state are localized around the N atoms bonded with the Mg atom. The imaginary part ε 2 of the complex dielectric function of GaN NTs with Mg Ga –O N co-doping has a sharp peak closely related to the optical transitions between the VBM and conduction band minimum states. - Highlights: ► The Mg Ga –O N defect complex can exist stably in GaN NTs. ► The band gap of the GaN NTs can be reduced due to the Mg Ga –O N co-doping. ► The VBM states are localized around the N atoms bonded with the Mg atom. ► The ε 2 -plot has a peak related to the optical transition from the VBM to CBM state

Multiplicação in vitro DE Ficus carica L.: efeito da cinetina e do ácido giberélico In vitro multiplication of Ficus carica L.: kinetin and giberelic acid effects

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Chrystiane Borges Fráguas

2004-02-01

Full Text Available A cultura da figueira é afetada pelo vírus-do-mosaico e a cultura de tecidos é uma alternativa para se proceder à limpeza clonal. Neste trabalho, objetivou-se estudar o efeito da cinetina e GA3 na multiplicação in vitro da figueira. Segmentos nodais foram inoculados em meio de cultura WPM contendo as seguintes combinações de cinetina (0; 0,5; 1; 2 e 4 mg.L-1 e GA3 (0, 2, 4, 6 e 8 mg.L-1. Avaliaram-se número e comprimento dos brotos, peso da matéria fresca e seca da parte aérea, número de raízes, peso da matéria fresca e seca do sistema radicular e de calos. A utilização de 0,5 mg.L-1 de cinetina promoveu melhor taxa de multiplicação in vitro de Ficus carica. O GA3 reduziu a formação e multiplicação dos brotos e induziu ao estiolamento, à hiperidricidade, clorose e necrose apical das plântulas.The fig culture is affected by mosaic virus and the tissue culture is an alternative in the clonal cleaning. The kinetin and GA3 effects on in vitro fig multiplication was studied. Nodal segments were inoculated in WPM culture medium containing the following combination of kinetin (0, 0.5, 1, 2 and 4 mg.L-1 and GA3 (0, 2, 4, 6 and 8 mg.L-1. The number and length, fresh and dry weigh matter of aerial part, number of roots, fresh and dry weight matter of root system and fresh and dry weight matter of callus were evaluated. The use of kinetin 0.5 mg.L-1 promoted higher rates of in vitro Ficus carica multiplication. The GA3 reduced the formation and shoot multiplication, and induced etiolation, hyperhydricity, clorosis and apical necrosis at the plantlets.

Stacking faults and phase changes in Mg-doped InGaN grown on Si

International Nuclear Information System (INIS)

Liliental-Weber, Zuzanna; Yu, Kin M.; Reichertz, Lothar A.; Ager, Joel W.; Walukiewicz, Wladek; Schaff, William J.; Hawkridge, Michael E.

2009-01-01

We report evidence for the role of Mg in the formation of basal stacking faults and a phase transition in In x Ga 1-x N layers doped with Mg grown by molecular beam epitaxy on Si(111) substrates with AlN buffer layers. Several samples with varying In content between x∝0.1 and x∝0.3 are examined by transmission electron microscopy and other techniques. High densities of basal stacking faults are observed in the central region of the InGaN layer away from the substrate or layer surface, but at varying depths within this region. Selected area diffraction patterns show that while the InGaN layer is initially in the wurtzite phase (and of good quality) AlN buffer layer, there is a change to the zinc blende phase in the upper part of the InGaN layer. SIMS measurements show that the Mg concentration drops from a maximum to a steady concentration coinciding with the presence of the basal stacking faults. There is little change in In or Ga concentrations in the same area. High-resolution electron microscopy from the area of the stacking faults confirms that the change to the cubic phase is abrupt across one such fault. These results indicate that Mg plays a role in the formation of stacking faults and the phase change observed in In x Ga 1-x N alloys. We also consider the role of In in the formation of these defects. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The feasibility of tunable p-type Mg doping in a GaN monolayer nanosheet

International Nuclear Information System (INIS)

Xia, Congxin; Peng, Yuting; Wei, Shuyi; Jia, Yu

2013-01-01

Based on density functional theory, the electronic structures, formation energy and transition energy level of a p-type Mg-doped GaN nanosheet are investigated. Numerical results show that the transition energy level decreases monotonously with increasing Mg doping concentration in Mg-doped GaN nanosheet systems, which is lower than that of the Mg-doped bulk GaN case. Moreover, the formation energy calculations indicate that Mg-doped GaN nanosheet structures can be realized under N-rich experimental growth conditions

Investigation of blue luminescence in Mg-doped nonpolar a-plane GaN

International Nuclear Information System (INIS)

Kim, Hogyoung; Song, Keun Man

2014-01-01

The temperature-dependent optical characteristics of blue luminescence (BL) band in Mg-doped nonpolar a-plane GaN films were investigated using photoluminescence (PL) measurements. For the sample with the highest Cp 2 Mg/TMGa ([Mg]/[Ga]) molar ratio, the BL band was shown to have two distinct peaks, one at about 2.95 eV and the other at about 2.75 eV, which were associated with the donor–acceptor pair (DAP) transitions between the one shallow Mg acceptor level and the two different deep donor levels. In contrast, a single broad BL band was observed for all other samples. Strong potential fluctuations caused by high compensation level in the sample with the highest [Mg]/[Ga] molar ratio might localize the carriers related to the 2.75 eV band, leading to the different emission characteristics in BL band as compared to other samples. -- Highlights: • The temperature-dependent optical characteristics of blue luminescence (BL) in Mg-doped nonpolar a-plane GaN were investigated using photoluminescence (PL) measurements. • At the highest [Mg]/[Ga] molar ratio, the BL was observed to have two distinct peaks at low temperatures. • The BL was associated with the one shallow Mg acceptor level and the two different Mg-related deep donor levels. • Strong potential fluctuations caused by high compensation level might localize the carriers

Investigation of blue luminescence in Mg-doped nonpolar a-plane GaN

Energy Technology Data Exchange (ETDEWEB)

Kim, Hogyoung [Department of Optometry, Seoul National University of Science and Technology, Seoul 139-743 (Korea, Republic of); Song, Keun Man, E-mail: skmmec@gmail.com [Korea Advanced Nano Fab Center, Suwon, Gyeonggi 443-770 (Korea, Republic of)

2014-01-15

The temperature-dependent optical characteristics of blue luminescence (BL) band in Mg-doped nonpolar a-plane GaN films were investigated using photoluminescence (PL) measurements. For the sample with the highest Cp{sub 2}Mg/TMGa ([Mg]/[Ga]) molar ratio, the BL band was shown to have two distinct peaks, one at about 2.95 eV and the other at about 2.75 eV, which were associated with the donor–acceptor pair (DAP) transitions between the one shallow Mg acceptor level and the two different deep donor levels. In contrast, a single broad BL band was observed for all other samples. Strong potential fluctuations caused by high compensation level in the sample with the highest [Mg]/[Ga] molar ratio might localize the carriers related to the 2.75 eV band, leading to the different emission characteristics in BL band as compared to other samples. -- Highlights: • The temperature-dependent optical characteristics of blue luminescence (BL) in Mg-doped nonpolar a-plane GaN were investigated using photoluminescence (PL) measurements. • At the highest [Mg]/[Ga] molar ratio, the BL was observed to have two distinct peaks at low temperatures. • The BL was associated with the one shallow Mg acceptor level and the two different Mg-related deep donor levels. • Strong potential fluctuations caused by high compensation level might localize the carriers.

Electrical transport in n-type ZnMgSSe grown by molecular beam epitaxy on GaAs

International Nuclear Information System (INIS)

Marshall, T.; Petruzzello, J.A.; Herko, S.P.

1994-01-01

Significant progress in improving the Performance of blue-green II-VI semiconductor injection lasers has come about from advances in the epitaxial growth and doping of ZnMgSSe on GaAs substrates. This paper investigates electrical transport and its relation to structural quality in n-type Zn 1-y Mg y S x Se 1-x epilayers doped with Cl, grown by molecular beam epitaxy. The composition parameters x and y vary from about 0.12-0.18 and 0.08-0.15, respectively. The quaternary epilayers studied are lattice-matched (or nearly so) to the GaAs substrate. Temperature-dependent Hall-effect measurements are performed on seven n-type ZnMgSSe:Cl epilayers, and a technique is presented whereby the resulting mobility-vs-temperature data is compared with data for ZnSe to obtain a structural figure of merit that is useful in characterizing the quaternary epilayer. 29 refs., 4 figs

Single-phase ceramics with La{sub 1-x}Sr{sub x}Ga{sub 1-y}Mg{sub y}O{sub 3-{delta}} composition from precursors obtained by mechanosynthesis

Energy Technology Data Exchange (ETDEWEB)

Moure, A.; Tartaj, J.; Moure, C. [Instituto de Ceramica y Vidrio, CSIC, C/Kelsen 5, 28049 Madrid (Spain); Castro, A. [Instituto de Ciencia de Materiales de Madrid, CSIC, c/Sor Juana Ines de la Cruz, 3 Cantoblanco, 28049 Madrid (Spain)

2009-03-15

Dense ceramics with La{sub 0.80}Sr{sub 0.20}Ga{sub 0.85}Mg{sub 0.15}O{sub 2.825} and La{sub 0.80}Sr{sub 0.15}Ga{sub 0.85}Mg{sub 0.20}O{sub 2.825} compositions have been prepared by sintering of mechanosynthesized precursors. The perovskite is synthesized after 85 h of milling in a planetary mill. Single phases have been obtained at conditions that are not possible if traditional solid-state reaction (SSR) method is used. The influence of milling time and composition in the reactivity of the precursors is studied. Highest purity is obtained in Sr = 0.15 and Mg = 0.20 composition, with relative density higher than 97%. The total elimination of typical secondary phases for these compositions, as SrLaGaO{sub 4} and SrLaGa{sub 3}O{sub 7}, allows the total conductivity of the ceramics to be improved. The influence of the grain size and the nature of the grain boundaries on the electrical characteristic of the ceramics are also discussed. (author)

Stability of midazolam hydrochloride injection 1-mg/mL solutions in polyvinyl chloride and polyolefin bags.

Science.gov (United States)

Karlage, Kelly; Earhart, Zachary; Green-Boesen, Kelly; Myrdal, Paul B

2011-08-15

The stability of midazolam hydrochloride injection 1-mg/mL solutions in polyvinyl chloride (PVC) and polyolefin bags under varying conditions was evaluated. Triplicate solutions of midazolam hydrochloride 1-mg/mL were prepared in polyolefin and PVC i.v. bags by diluting midazolam hydrochloride injection 5 mg/mL with 5% dextrose injection. Bags were then stored under refrigeration (3-4 °C), exposed to light at room temperature (20-25 °C), or protected from light in amber bags at room temperature. Samples were taken immediately after preparation (day 0) and on days 1, 2, 3, 6, 13, 20, and 27 for analysis with a stability-indicating high-performance liquid chromatography assay in order to determine solution concentration. Stability was defined as retention of at least 90% of the initial drug concentration. The pH of each solution was also measured weekly. Sterility of the i.v. bags was determined at the end of the study by microbiological testing with culture in growth media. Differences in concentrations under the various storage conditions and bags used were analyzed using analysis of variance. All solutions retained over 98% of the initial midazolam hydrochloride concentration, with no statistically significant (p ≥ 0.05) change in concentration over the four-week period. Stability was not affected by temperature, exposure to light, or bag type. The pH of all solutions remained between 3.2 and 3.4 throughout the study. Sterility after 28 days was retained. Midazolam hydrochloride 1-mg/mL solutions diluted in 5% dextrose injection remained stable over 27 days in both polyolefin and PVC i.v. bags, regardless of storage condition.

Optical properties of lattice matched InxGa1-xP1-yNy heteroepitaxial layers on GaP

International Nuclear Information System (INIS)

Imanishi, T.; Wakahara, A.; Kim, S.M.; Yonezu, H.; Furukawa, Y.

2005-01-01

Optical constants and band structure of In x Ga 1-x P 1-y N y lattice matched to GaP (100) substrate are investigated. Nitrogen concentration in the film estimated by X-ray diffraction and X-ray photoelectron spectroscopy, was 1.4%, 1.8% and 3.5%. Refractive index and transition critical points E 0 (Γ v to Γ c ), E 1 (L v to L c ) and E 2 (X v to X c ) are evaluated by spectroscopic ellipsometry. When N composition increases from 1.4% to 3.5%, both photoluminescence (PL) peak energy, E PL , and E 0 shift to lower energy, and the energy difference ΔE=E 0 -E PL decrease from 380 meV to 110 meV. The large red-sift of E PL from the E 0 suggest that the luminescence is of defect-related luminescence, and crossover point of indirect band structure estimated by the extrapolation of N-composition dependence of ΔE is estimated to be around in In 0.1 Ga 0.9 P 0.96 N 0.04 . (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

Science.gov (United States)

Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan; Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A.

2015-01-01

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 1019 cm-3 with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 1020 cm-3 show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 1019 cm-3. The p-GaN and p-Al0.11Ga0.89N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3-3.5 V and series resistances of 6-10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

OpenAIRE

Monemar, Bo; Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Lindgren, David; Samuelson, Lars; Ni, Xianfeng; Morkoç, Hadis; Paskova, Tanya; Bi, Zhaoxia; Ohlsson, Jonas

2011-01-01

Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 1018cm-3 to well above 1019 cm-3. The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV to 3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependenc...

Characterization of an Mg-implanted GaN p-i-n Diode

Science.gov (United States)

2016-03-31

Characterization of an Mg- implanted GaN p-i-n Diode Travis J. Anderson, Jordan D. Greenlee, Boris N. Feigelson, Karl D. Hobart, and Francis J...Kub Naval Research Laboratory, Washington, DC 20375 Abstract: A p-i-n diode formed by the implantation of Mg in GaN was fabricated and...characterized. After implantation , Mg was activated using the symmetrical multicycle rapid thermal annealing technique with heating pulses up to 1340C

GA3 e Paclobutrazol no florescimento e na produção de frutos em duas cultivares de morangueiro GA3 and Paclobutrazol on the flowering and yield of strawberry

Directory of Open Access Journals (Sweden)

Jaime Duarte Filho

2004-06-01

Full Text Available Neste trabalho estudou-se o efeito dos fitorreguladores Ga3 e Paclobutrazol no florescimento e produção de frutos de morangueiro (Fragaria x ananassa Duch.. O experimento foi conduzido em Caldas (MG, na EPAMIG. O delineamento experimental adotado foi o de blocos casualizados, com quatro repetições, num esquema fatorial 2x4, onde as variáveis dependentes foram duas cultivares ('Oso Grande' e 'Seascape' e os tratamentos controle (água; GA3 a 40 mg L-1 em duas aplicações (aos 45 e 65 dias após o transplante; paclobutrazol (produto comercial Cultar 10% a 100 mg L-1 aos 75 dias após o transplante das mudas; combinação de GA3 + paclobutrazol aplicados aos 45; 65 e aos 75 dias, respectivamente, após o transplante. Os tratamentos foram aplicados via foliar em ambas as cultivares. A resposta à aplicação dos fitorreguladores GA3 e paclobutrazol em morangueiro depende da cultivar. A cv. Seascape, de dia neutro, respondeu melhor à aplicação de GA3 que a 'Oso Grande', de dia curto; Por outro lado, o paclobutrazol, quando aplicado via foliar, aos 75 dias após o transplante, reduziu o florescimento do morangueiro o que mostra a necessidade de mais pesquisas sobre dosagens e épocas de aplicação do paclobutrazol nesta cultura.The effect of bioregulators GA3 and paclobutrazol was evaluated on flowering and yield of strawberry cultivars Oso Grande and Seascape. The experiment was carried out in Caldas, Minas Gerais State, Brazil. The treatments consisted of control (no application of bioregulators; GA3 at 40 mg L-1, in two applications (45 and 65 days after transplanting date; paclobutrazol (commercial product Cultar, 10% at 100 mg L-1, 75 days after transplanting date; combination of GA3 + paclobutrazol, applied 45; 65 and 75 days, respectively, after transplanting date. The experimental design was a randomized complete block, with four replications, in a factorial 2x4. The response to the bioregulators GA3 and Paclobutrazol was cultivar

Characterization of the GaN-MgO Transistor Interface: More Power and Efficiency

Science.gov (United States)

Sanchez, Jose; Kumah, Divine; Walker, Fred

2012-02-01

In this age of high-energy consumption, the development of more efficient and more reliable devices is indispensable. Gallium nitride (GaN)-based devices are an option in achieving this goal. GaN's wide bandgap of 3.4 eV allows the device to handle large amount of current before leakage makes its energy consumption inefficient. The characteristics of GaN, in conjunction with those of Magnesium oxide (MgO), would allow for improvement of different electronic applications such as mobile phone communication technology. In this work, the fabrication of the GaN/MgO device was done by Molecular Beam Epitaxy. This device was grown under a variety of parameters where the growth temperature, growth chamber pressure, and the rate of material deposition were changed. To determine the optimal growth parameters, current-voltage and capacitance-voltage measurements were conducted on to evaluate the effects of these growth conditions. Atomic Force Microscopy was also used in characterizing the crystallinity and morphology of the samples. A conclusion of the research is that by improving the roughness of the substrate, the breakdown voltage of the MgO layer and the overall performance of the device can be improve, yielding a device with very low energy loss in the current transmission process.

Stability of a1 mg/mL oral solution zidovudine

International Nuclear Information System (INIS)

Garcia Penna, Caridad Margarita; Morales Lacarrere, Ivan; Martinez Espinosa, Vivian

2011-01-01

The carrying out of a high-performance liquid chromatography analytical method was assessed; applicable to stability study of oral solution zidovudine (1 mg/mL) was made. The analytical method was linear, precise, specific and exact in the study concentrations. The stability study of oral solution zidovudine (1 mg/mL) was conducted determining expiring date. The shelf life study was conducted over 24 months at room temperature; whereas that of accelerated stability was conducted with the product under wet and temperature conditions; analysis was carried out over three months. Formula met quality specifications described in Pharmacopeia. Results from the shelf life study demonstrated that product keeps the parameters determining its quality during that time and in accelerated studies there was not significant product degradation. Under above mentioned conditions two years were established as expiring date

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

Energy Technology Data Exchange (ETDEWEB)

Monemar, Bo [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Lindgren, David; Samuelson, Lars [Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Ni, Xianfeng; Morkoc, Hadis [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284-3072 (United States); Paskova, Tanya [Kyma Technologies Inc., Raleigh, North Carolina 27617 (United States); Bi, Zhaoxia; Ohlsson, Jonas [Glo AB, Ideon Science Park, Scheelevaegen 17, 223 70 Lund (Sweden)

2011-07-15

Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10{sup 18} cm{sup -3} to above 10{sup 20} cm{sup -3}. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9-3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependence of the BE spectra on excitation intensity as well as the transient decay behaviour demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23 eV. Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also briefly discussed. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Determination of HEPES in 68Ga-labeled peptide solutions

International Nuclear Information System (INIS)

Revital Sasson; Dan Vaknin; Avihai Bross; Efraim Lavie

2010-01-01

A practical and reliable HPLC method was used for the determination of 2-[4-N-(2-hydroxyethyl)-1-piperazinyl]-N'-ethanesulfonic acid (HEPES) content in the 68 Ga-labeled [1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraacetic acid]-1-Nal3-octreotide (DOTANOC). Linearity of this method was observed in a concentration range of 0.01-10 mg mL -1 and the quantitative limit (signal to noise = 11) was determined as 10 μg mL -1 . The HEPES concentration in the final products of 68 Ga-DOTANOC was typically lower than the detection limit. Pure water and HEPES buffer as reaction medium were investigated using various activities of gallium-68. It was demonstrated that the presence of HEPES buffer consistently furnished very high radiochemical purity of 68 Ga-DOTANOC, which remained stable for several hours post-labeling. Evidence is provided that in addition to its role as a buffer, HEPES also functions as a radioprotectant agent. (author)

Surface and bulk electronic structures of unintentionally and Mg-doped In0.7Ga0.3N epilayer by hard X-ray photoelectron spectroscopy

Science.gov (United States)

Imura, Masataka; Tsuda, Shunsuke; Takeda, Hiroyuki; Nagata, Takahiro; Banal, Ryan G.; Yoshikawa, Hideki; Yang, AnLi; Yamashita, Yoshiyuki; Kobayashi, Keisuke; Koide, Yasuo; Yamaguchi, Tomohiro; Kaneko, Masamitsu; Uematsu, Nao; Wang, Ke; Araki, Tsutomu; Nanishi, Yasushi

2018-03-01

The surface and bulk electronic structures of In0.7Ga0.3N epilayers are investigated by angle-resolved hard X-ray photoelectron spectroscopy (HX-PES) combined with soft X-PES. The unintentionally and Mg-doped In0.7Ga0.3N (u-In0.7Ga0.3N and In0.7Ga0.3N:Mg, respectively) epilayers are grown by radio-frequency plasma-assisted molecular beam epitaxy. Here three samples with different Mg concentrations ([Mg] = 0, 7 × 1019, and 4 × 1020 cm-3) are chosen for comparison. It is found that a large downward energy band bending exists in all samples due to the formation of a surface electron accumulation (SEA) layer. For u-In0.7Ga0.3N epilayer, band bending as large as 0.8 ± 0.05 eV occurs from bulk to surface. Judged from the valence band spectral edge and numerical analysis of energy band with a surface quantum well, the valence band maximum (VBM) with respect to Fermi energy (EF) level in the bulk is determined to be 1.22 ± 0.05 eV. In contrast, for In0.7Ga0.3N:Mg epilayers, the band bending increases and the VBM only in the bulk tends to shift toward the EF level owing to the Mg acceptor doping. Hence, the energy band is considered to exhibit a downward bending structure due to the coexistence of the n+ SEA layer and Mg-doped p layer formed in the bulk. When [Mg] changes from 7 × 1019 to 4 × 1020 cm-3, the peak split occurs in HX-PES spectra under the bulk sensitive condition. This result indicates that the energy band forms an anomalous downward bending structure with a singular point due to the generation of a thin depleted region at the n+ p interface. For In0.7Ga0.3N:Mg epilayers, the VBM in the bulk is assumed to be slightly lower than EF level within 0.1 eV.

Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

International Nuclear Information System (INIS)

Yang, Jing; Zhao, Degang; Jiang, Desheng; Chen, Ping; Zhu, Jianjun; Liu, Zongshun; Le, Lingcong; He, Xiaoguang; Li, Xiaojing; Zhang, Y. T.; Du, G. T.

2015-01-01

The effects of hydrogen impurities on p-type resistivity in Mg-doped GaN films were investigated. It was found that hydrogen impurities may have the dual role of passivating Mg Ga acceptors and passivating donor defects. A decrease in p-type resistivity when O 2 is introduced during the postannealing process is attributed to the fact that annealing in an O 2 -containing environment can enhance the dissociation of Mg Ga -H complexes as well as the outdiffusion of H atoms from p-GaN films. However, low H concentrations are not necessarily beneficial in Mg-doped GaN films, as H atoms may also be bound at donor species and passivate them, leading to the positive effect of reduced compensation

Formation of definite GaN p-n junction by Mg-ion implantation to n--GaN epitaxial layers grown on a high-quality free-standing GaN substrate

Science.gov (United States)

Oikawa, Takuya; Saijo, Yusuke; Kato, Shigeki; Mishima, Tomoyoshi; Nakamura, Tohru

2015-12-01

P-type conversion of n--GaN by Mg-ion implantation was successfully performed using high quality GaN epitaxial layers grown on free-standing low-dislocation-density GaN substrates. These samples showed low-temperature PL spectra quite similar to those observed from Mg-doped MOVPE-grown p-type GaN, consisting of Mg related donor-acceptor pair (DAP) and acceptor bound exciton (ABE) emission. P-n diodes fabricated by the Mg-ion implantation showed clear rectifying I-V characteristics and UV and blue light emissions were observed at forward biased conditions for the first time.

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

Energy Technology Data Exchange (ETDEWEB)

Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan, E-mail: alan.doolittle@ece.gatech.edu [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

2015-01-28

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10{sup 19} cm{sup −3} with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10{sup 20} cm{sup −3} show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10{sup 19} cm{sup −3}. The p-GaN and p-Al{sub 0.11}Ga{sub 0.89}N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

International Nuclear Information System (INIS)

Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan; Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A.

2015-01-01

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10 19 cm −3 with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10 20 cm −3 show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10 19 cm −3 . The p-GaN and p-Al 0.11 Ga 0.89 N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K

Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates

OpenAIRE

Pozina, Galia; Hemmingsson, Carl; Paskov, Plamen P.; Bergman, Peder; Monemar, Bo; Kawashima, T.; Amano, H.; Akasaki, I.; Usui, A.

2008-01-01

Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the halide vapor phase technique demonstrate metastability of the near-band-gap photoluminescence (PL). The acceptor bound exciton (ABE) line possibly related to the C acceptor vanishes in as-grown samples within a few minutes under UV laser illumination. Annealing activates the more stable Mg acceptors and passivates C acceptors. Consequently, only the ABE line related to Mg is dominant in PL spectra...

Local environment and composition of magnesium gallium layered double hydroxides determined from solid-state 1H and 71Ga NMR spectroscopy

DEFF Research Database (Denmark)

Boisen Staal, Line; Lipton, Andrew S.; Zorin, Vadim

2014-01-01

Ordering of gallium(III) in a series of magnesium gallium (MgGa) layered double hydroxides (LDHs), [Mg1−xGax(OH)2(NO3)x·yH2O] was investigated using solid-state 1H and 71Ga NMR spectroscopy as well as powder X-ray diffraction. Three different proton environments from Mg3single bondOH, Mg2Gasingle...... analysis show that the synthesized MgGa LDH׳s had a lower Mg:Ga ratio than that of the starting reactant solution. The origin of this is the formation of soluble [Ga(OH)4]− complexes formed during synthesis, and not due to formation of insoluble gallium (oxy)hydroxides. No sign of Gasingle bondOsingle bond...

Neutron Powder Diffraction Measurements of the Spinel MgGa2O4:Cr3+ - A Comparative Study between the High Flux Diffractometer D2B at the ILL and the High Resolution Powder Diffractometer Aurora at IPEN

International Nuclear Information System (INIS)

Da Silva, M A F M; Sosman, L P; Yokaichiya, F; Henry, P F; Bordallo, H N; Mazzocchi, V L; Parente, C B R; Mestnik-Filho, J

2012-01-01

Optical materials that emit from the visible to the near-infrared spectral region are of great interest due to their possible application as tunable radiation sources, as signal transmission, display, optoelectronics signal storage, cellulose industry as well as in dosimetry. One important family of such systems are the spinel compounds doped with Cr 3+ , in which the physical the properties are related to the insertion of punctual defects in the crystalline structure. The purpose of our work is two fold. First, we compare the luminescence of the MgGa 2 O 4 -Ga 2 O 3 system with the single phase Ga 2 O 3 and MgGa 2 O 4 and relate structural changes observed in MgGa 2 O 4 -Ga 2 O 3 system to the optical properties, and secondly, to compare the neutron powder diffraction results obtained using two diffractometers: D2B located at the ILL (Grenoble, France) and Aurora located at IPEN (São Paulo, Brazil). In the configuration chosen, Aurora shows an improved resolution, which is related to the design of its silicon focusing monochromator.

Heteroepitaxial growth and surface structure of L1{sub 0}-MnGa(111) ultra-thin films on GaN(0001)

Energy Technology Data Exchange (ETDEWEB)

Mandru, Andrada-Oana; Wang, Kangkang; Cooper, Kevin; Ingram, David C.; Smith, Arthur R. [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Garcia Diaz, Reyes; Takeuchi, Noboru [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autónoma de México, Apartado Postal 14, Ensenada Baja California, Codigo Postal 22800 (Mexico); Haider, Muhammad [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Department of Physics, King Fahd University of Petroleum and Minerals, Dhahran, 31261 (Saudi Arabia)

2013-10-14

L1{sub 0}-structured MnGa(111) ultra-thin films were heteroepitaxially grown on GaN(0001) under lightly Mn-rich conditions using molecular beam epitaxy. Room-temperature scanning tunneling microscopy (STM) investigations reveal smooth terraces and angular step edges, with the surface structure consisting primarily of a 2 × 2 reconstruction along with small patches of 1 × 2. Theoretical calculations were carried out using density functional theory, and the simulated STM images were calculated using the Tersoff-Hamman approximation, revealing that a stoichiometric 1 × 2 and a Mn-rich 2 × 2 surface structure give the best agreement with the observed experimental images.

Physiological Responses and Fruit Retention of Carambola Fruit (Averrhoa carambola L.) Induced by 2,4-D and GA3

OpenAIRE

KURNLAWATI, BEKTI; HAMIM,

2009-01-01

One of the problems in cultivation of carambola fruit is the high of flower and fruit drop during fruit development. To understand these problems and to improve fruit retention, the content of indole-3-acetic acid (IAA) and total sugar in carambola fruit and leaves were analysed in response to application of gibberellic acid (GA3) and 2,4-dichlorophenoxyacetic acid (2,4-D). The experiments used 1,5 year old of carambola plants (Averrhoa carambola L. var Dewi) grown in polybag of 40 x 50 cm. ...

Electronic properties of GaV 4 S 8

Indian Academy of Sciences (India)

... different in GaV4S8-1 and GaV4S8-2. This statement is strongly supported by the calculated bandwidth per cluster in GaV4S8 (∼0.342 eV in GaV4S8-1 and ∼0.374 eV in GaV4S8-2). A negative magnetoresistance (MR) is also found around 43 K in GaV4S8-2 at 6.0 T magnetic field associated with structural transition.

Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer.

Science.gov (United States)

Jia, Xiuling; Chen, Dunjun; Bin, Liu; Lu, Hai; Zhang, Rong; Zheng, Youdou

2016-06-09

A novel ion-imprinted electrochemical sensor based on AlGaN/GaN high electron mobility transistors (HEMTs) was developed to detect trace amounts of phosphate anion. This sensor combined the advantages of the ion sensitivity of AlGaN/GaN HEMTs and specific recognition of ion imprinted polymers. The current response showed that the fabricated sensor is highly sensitive and selective to phosphate anions. The current change exhibited approximate linear dependence for phosphate concentration from 0.02 mg L(-1) to 2 mg L(-1), the sensitivity and detection limit of the sensor is 3.191 μA/mg L(-1) and 1.97 μg L(-1), respectively. The results indicated that this AlGaN/GaN HEMT-based electrochemical sensor has the potential applications on phosphate anion detection.

Physico-Chemical Properties of MgGa Mixed Oxides and Reconstructed Layered Double Hydroxides and Their Performance in Aldol Condensation of Furfural and Acetone

Directory of Open Access Journals (Sweden)

Oleg Kikhtyanin

2018-05-01

Full Text Available MgGa layered double hydroxides (Mg/Ga = 2–4 were synthesized and used for the preparation of MgGa mixed oxides and reconstructed hydrotalcites. The properties of the prepared materials were examined by physico-chemical methods (XRD, TGA, NH3-TPD, CO2-TPD, SEM, and DRIFT and tested in aldol condensation of furfural and acetone. The as-prepared phase-pure MgGa samples possessed hydrotalcite structure, and their calcination resulted in mixed oxides with MgO structure with a small admixture phase characterized by a reflection at 2θ ≈ 36.0°. The interaction of MgGa mixed oxides with pure water resulted in reconstruction of the HTC structure already after 15 s of the rehydration with maximum crystallinity achieved after 60 s. TGA-MS experiments proved a substantial decrease in carbonates in all rehydrated samples compared with their as-prepared counterparts. This allowed suggesting presence of interlayer hydroxyls in the samples. Acido-basic properties of MgGa mixed oxides determined by TPD technique did not correlate with Mg/Ga ratio which was explained by the specific distribution of Ga atoms on the external surface of the samples. CO2-TPD method was also used to evaluate the basic properties of the reconstructed MgGa samples. In these experiments, an intensive peak at T = 450°C on CO2-TPD curve was attributed to the decomposition of carbonates newly formed by CO2 interaction with interlayer carbonates rather than to CO2 desorption from basic sites. Accordingly, CO2-TPD method quantitatively characterized the interlayer hydroxyls only indirectly. Furfural conversion on reconstructed MgGa materials was much larger compared with MgGa mixed oxides confirming that Brønsted basic sites in MgGa catalysts, like MgAl catalysts, were active in the reaction. Mg/Ga ratio in mixed oxides influenced product selectivity which was explained by the difference in textural properties of the samples. In contrast, Mg/Ga ratio in reconstructed catalysts had

Physico-Chemical Properties of MgGa Mixed Oxides and Reconstructed Layered Double Hydroxides and Their Performance in Aldol Condensation of Furfural and Acetone.

Science.gov (United States)

Kikhtyanin, Oleg; Čapek, Libor; Tišler, Zdeněk; Velvarská, Romana; Panasewicz, Adriana; Diblíková, Petra; Kubička, David

2018-01-01

MgGa layered double hydroxides (Mg/Ga = 2-4) were synthesized and used for the preparation of MgGa mixed oxides and reconstructed hydrotalcites. The properties of the prepared materials were examined by physico-chemical methods (XRD, TGA, NH 3 -TPD, CO 2 -TPD, SEM, and DRIFT) and tested in aldol condensation of furfural and acetone. The as-prepared phase-pure MgGa samples possessed hydrotalcite structure, and their calcination resulted in mixed oxides with MgO structure with a small admixture phase characterized by a reflection at 2θ ≈ 36.0°. The interaction of MgGa mixed oxides with pure water resulted in reconstruction of the HTC structure already after 15 s of the rehydration with maximum crystallinity achieved after 60 s. TGA-MS experiments proved a substantial decrease in carbonates in all rehydrated samples compared with their as-prepared counterparts. This allowed suggesting presence of interlayer hydroxyls in the samples. Acido-basic properties of MgGa mixed oxides determined by TPD technique did not correlate with Mg/Ga ratio which was explained by the specific distribution of Ga atoms on the external surface of the samples. CO 2 -TPD method was also used to evaluate the basic properties of the reconstructed MgGa samples. In these experiments, an intensive peak at T = 450°C on CO 2 -TPD curve was attributed to the decomposition of carbonates newly formed by CO 2 interaction with interlayer carbonates rather than to CO 2 desorption from basic sites. Accordingly, CO 2 -TPD method quantitatively characterized the interlayer hydroxyls only indirectly. Furfural conversion on reconstructed MgGa materials was much larger compared with MgGa mixed oxides confirming that Brønsted basic sites in MgGa catalysts, like MgAl catalysts, were active in the reaction. Mg/Ga ratio in mixed oxides influenced product selectivity which was explained by the difference in textural properties of the samples. In contrast, Mg/Ga ratio in reconstructed catalysts had practically

Characteristics of Mg-doped and In-Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

International Nuclear Information System (INIS)

Chung, S J; Lee, Y S; Suh, E-K; Senthil Kumar, M; An, M H

2010-01-01

Mg-doped and In-Mg co-doped p-type GaN epilayers were grown using the metal organic chemical vapour deposition technique. The effect of In co-doping on the physical properties of p-GaN layer was examined by high resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), Hall effect, photoluminescence (PL) and persistent photoconductivity (PPC) at room temperature. An improved crystalline quality and a reduction in threading dislocation density are evidenced upon In doping in p-GaN from HRXRD and TEM images. Hole conductivity, mobility and carrier density also significantly improved by In co-doping. PL studies of the In-Mg co-doped sample revealed that the peak position is blue shifted to 3.2 eV from 2.95 eV of conventional p-GaN and the PL intensity is increased by about 25%. In addition, In co-doping significantly reduced the PPC effect in p-type GaN layers. The improved electrical and optical properties are believed to be associated with the active participation of isolated Mg impurities.

Investigations on MgO-dielectric GaN/AlGaN/GaN MOS-HEMTs by using an ultrasonic spray pyrolysis deposition technique

International Nuclear Information System (INIS)

Lee, Ching-Sung; Liu, Han-Yin; Wu, Ting-Ting; Hsu, Wei-Chou; Sun, Wen-Ching; Wei, Sung-Yen; Yu, Sheng-Min

2016-01-01

This work investigates GaN/Al 0.24 Ga 0.76 N/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on a Si substrate with MgO gate dielectric by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. The oxide layer thickness is tuned to be 30 nm with the dielectric constant of 8.8. Electron spectroscopy for chemical analysis (ESCA), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM), transmission electron microscopy (TEM), C–V, low-frequency noise spectra, and pulsed I–V measurements are performed to characterize the interface and oxide quality for the MOS-gate structure. Improved device performances have been successfully achieved for the present MOS-HEMT (Schottky-gate HEMT) design, consisting of a maximum drain-source current density (I DS, max ) of 681 (500) mA/mm at V GS  = 4 (2) V, I DS at V GS  = 0 V (I DSS0 ) of 329 (289) mA/mm, gate-voltage swing (GVS) of 2.2 (1.6) V, two-terminal gate-drain breakdown voltage (BV GD ) of −123 (−104) V, turn-on voltage (V on ) of 1.7 (0.8) V, three-terminal off-state drain-source breakdown voltage (BV DS ) of 119 (96) V, and on/off current ratio (I on /I off ) of 2.5 × 10 8 (1.2 × 10 3 ) at 300 K. Improved high-frequency and power performances are also achieved in the present MOS-HEMT design. (paper)

Atomic structure of pyramidal defects in GaN:Mg: Influence of annealing

Energy Technology Data Exchange (ETDEWEB)

Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; O' Keefe, M. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Hautakangas, S.; Saarinen, K. [Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720 (United States); Freitas, J.A.; Henry, R.L. [ESTD-Electronic Materials Branch, Naval Research Laboratory, Washington, D.C. 20375 (United States)

2006-05-15

The atomic structure of the characteristic defects (Mg-rich hexagonal pyramids) in p-doped bulk and MOCVD GaN:Mg thin films grown with Ga polarity was determined at atomic resolution by direct reconstruction of the scattered electron wave in a transmission electron microscope. Small cavities were present inside the defects, confirmed also with positron annihilation. The inside walls of the cavities were covered by GaN of reverse polarity compared to the matrix. Annealing of the MOCVD layers lead to slight increase of the defect size and an increase of the room temperature photoluminescence intensity. Positron annihilation confirms presence of vacancy clusters of different sizes triggered by the Mg doping in as-grown samples and decrease of their concentration upon annealing at 900 and 1000 C. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Mixed conductivity in La(Ga,Mg,NbO3-δ Perovskites

Directory of Open Access Journals (Sweden)

Marques, F. M. B.

1999-12-01

Full Text Available Solid-solution formation has been found in the perovskite-type system LaGa0.85-xMg0.15(Nb0.33Mg0.66xO3-δ (x = 0 - 0.20. Increasing dopant concentration leads to lower oxygen ionic conductivity and, at temperatures above 1000 K, higher p-type electronic conductivity. Oxygen-ion transference numbers in air were determined to vary in the range 0.78 to 0.96, decreasing with increasing x and temperature. Thermal expansion coefficients of ceramic samples of LaGa0.85-xMg0.15(Nb0.33Mg0.66xO3-δ were calculated in a temperature range of 300 to 1100 K to be essentially independent of composition, varying in the range (10.0 ± 0.2 x 10-6 K-1. Values of the activation energy for the total electrical conductivity in air are 104-106 kJ/mol in the temperature range 670 - 1000 K and 67 - 76 kJ/mol in the temperature range 1000 - 1200 K. The method of synthesis was found to affect both the symmetry of the perovskite unit cell and phase composition. The presence of second phases led to a dramatic decrease in conductivity.Se ha encontrado la formación de una solución sólida en el sistema LaGa0.85-xMg0.15(Nb0.33Mg0.66xO3-δ (x = 0 - 0.20. Un aumento de la concentración de dopante lleva a una menor conductividad iónica de oxígeno y a temperaturas superiores a 1000 K, una mayor conductividad electrónica de tipo p. El número de transferencia del ión oxígeno en aire fue determinado y varía en el rango 0.78 a 0.96 disminuyendo con el aumento de x y de la temperatura. El coeficiente de expansión térmico de las muestras cerámicas de LaGa0.85-xMg0.15(Nb0.33Mg0.66xO3-δ fue calculado en el rango de temperatura de 300 a 1100 k siendo independiente de la composición, y variando en el rango (10.0 ± 0.2 x 10-6 K-1. Los valores de la energía de activación para la conductividad eléctrica total en aire son 104-106 KJ/mol en el rango de temperatura 670-1000 K y 67-76 kJ/mol en el rango de temperaturas 1000-1200 K. Se encontró que el método de síntesis afecta

Unexpected current lowering of Mg contact on SI-GaAs

International Nuclear Information System (INIS)

Dubecky, F.; Bohacek, F.; Sekacova, M.; Hubik, P.; Kindl, D.; Gombia, E.; Necas, V.

2016-01-01

Four SI-GaAs surface barrier diodes with different contact metallization and/or contact areas were prepared and characterized in terms of the I-V measurements. The possibility of tuning their performance has been demonstrated by virtue of the device engineering, involving a low work-function Mg metallization and manipulation of the contact area. A device with a remarkable current lowering, by almost two orders of magnitude with respect to the 'standard' sample, was prepared. Such a possibility opens new application choices for SI-GaAs not recognized before. We suggest its use, with appropriate metal contact/s, in devices with a low current at low-voltage requirements, such as photonic devices, photodiodes or different physical sensors. The reported data and evidence from the existing literature rule out the widely accepted mechanism of ohmic/bulk-limited and thermionic emission transport as general rules for the interpretation of the low-bias regime in SI-GaAs diodes. The strong blocking ability of the low work function Mg contact was attributed to the downwards band bending, near contact charge carriers accumulation and the corresponding lowering of the bulk SI-GaAs free carrier concentration. (authors)

Defect-engineered GaN:Mg nanowire arrays for overall water splitting under violet light

International Nuclear Information System (INIS)

Kibria, M. G.; Chowdhury, F. A.; Zhao, S.; Mi, Z.; Trudeau, M. L.; Guo, H.

2015-01-01

We report that by engineering the intra-gap defect related energy states in GaN nanowire arrays using Mg dopants, efficient and stable overall neutral water splitting can be achieved under violet light. Overall neutral water splitting on Rh/Cr 2 O 3 co-catalyst decorated Mg doped GaN nanowires is demonstrated with intra-gap excitation up to 450 nm. Through optimized Mg doping, the absorbed photon conversion efficiency of GaN nanowires reaches ∼43% at 375–450 nm, providing a viable approach to extend the solar absorption of oxide and non-oxide photocatalysts

Effect of Mg"2"+ ions co-doping on timing performance and radiation tolerance of Cerium doped Gd_3Al_2Ga_3O_1_2 crystals

International Nuclear Information System (INIS)

Lucchini, M.T.; Babin, V.; Bohacek, P.; Gundacker, S.; Kamada, K.; Nikl, M.; Petrosyan, A.; Yoshikawa, A.; Auffray, E.

2016-01-01

Inorganic scintillators with high density and high light yield are of major interest for applications in medical imaging and high energy physics detectors. In this work, the optical and scintillation properties of Mg co-doped Ce:Gd_3Al_2Ga_3O_1_2 crystals, grown using Czochralski technique, have been investigated and compared with Ce:Gd_3Al_2Ga_3O_1_2 ones prepared with identical technology. Improvements in the timing performance of the Mg co-doped samples with respect to Ce:Gd_3Al_2Ga_3O_1_2 ones have been measured, namely a substantial shortening of the rise time and scintillation decay components and lower afterglow were achieved. In particular, a significantly better coincidence time resolution of 233 ps FWHM, being a fundamental parameter for TOF-PET devices, has been observed in Mg co-doped crystals. The samples have also shown a good radiation tolerance under high doses of γ-rays, making them suitable candidates for applications in harsh radiation environments, such as detectors at future collider experiments.

FeGa/MgO/Fe/GaAs(001) magnetic tunnel junction: Growth and magnetic properties

International Nuclear Information System (INIS)

Gobaut, B.; Ciprian, R.; Salles, B.R.; Krizmancic, D.; Rossi, G.; Panaccione, G.; Eddrief, M.; Marangolo, M.; Torelli, P.

2015-01-01

Research on spintronics and on multiferroics leads now to the possibility of combining the properties of these materials in order to develop new functional devices. Here we report the integration of a layer of magnetostrictive material into a magnetic tunnel junction. A FeGa/MgO/Fe heterostructure has been grown on a GaAs(001) substrate by molecular beam epitaxy (MBE) and studied by X-ray magnetic circular dichroism (XMCD). The comparison between magneto optical Kerr effect (MOKE) measurements and hysteresis performed in total electron yield allowed distinguishing the ferromagnetic hysteresis loop of the FeGa top layer from that of the Fe buried layer, evidencing a different switching field of the two layers. This observation indicates an absence of magnetic coupling between the two ferromagnetic layers despite the thickness of the MgO barrier of only 2.5 nm. The in-plane magnetic anisotropy has also been investigated. Overall results show the good quality of the heterostructure and the general feasibility of such a device using magnetostrictive materials in magnetic tunnel junction

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Science.gov (United States)

Okumura, Hironori; Martin, Denis; Malinverni, Marco; Grandjean, Nicolas

2016-02-01

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 °C) allows decreasing the incorporation of donor-like defects (p-type doping compensation. As a result, a net acceptor concentration of 7 × 1019 cm-3 was achieved, and the hole concentration measured by Hall effect was as high as 2 × 1019 cm-3 at room temperature. Using such a high Mg doping level, we fabricated GaN backward diodes without polarization-assisted tunneling. The backward diodes exhibited a tunneling-current density of 225 A/cm2 at a reverse bias of -1 V at room temperature.

Demonstration of solar-blind AlxGa1-xN-based heterojunction phototransistors

Science.gov (United States)

Zhang, Lingxia; Tang, Shaoji; Liu, Changshan; Li, Bin; Wu, Hualong; Wang, Hailong; Wu, Zhisheng; Jiang, Hao

2015-12-01

Al0.4Ga0.6N/Al0.65Ga0.35N heterojunction phototransistors have been fabricated from the epi-structure grown by low-pressure metal organic chemical vapor deposition on c-plane sapphire substrates. P-type conductivity of the AlGaN base layer was realized by using indium surfactant-assisted Mg-delta doping method. Regrowth technique was used to suppress the Mg memory effect on the n-type emitter. The fabricated devices with a 150-μm-diameter active area exhibited a bandpass spectral response between 235 and 285 nm. Dark current was measured to be less than 10 pA for bias voltages below 2.0 V. A high optical gain of 1.9 × 103 was obtained at 6 V bias.

Collective effects of interface roughness and alloy disorder in InxGa1-xN/GaN multiple quantum wells

International Nuclear Information System (INIS)

Zeng, K.C.; Smith, M.; Lin, J.Y.; Jiang, H.X.

1998-01-01

The collective effects of alloy disorder and interface roughness on optical properties of In x Ga 1-x N/GaN multiple quantum wells (MQWs) have been studied. The results are compared with those of GaN/AlGaN MQWs and InGaN epilayers. In x Ga 1-x N/GaN MQWs emit a broad and asymmetrical photoluminescence (PL) band, while GaN/AlGaN MQWs and InGaN epilayers emit narrower and Gaussian-shaped PL bands. Furthermore, the decay of excitons at low temperatures in In x Ga 1-x N/GaN MQWs follows a nonexponential function even at the lower-energy side of the PL spectral peak, while those in GaN/AlGaN MQWs and in InGaN epilayers follow a single exponential function. Both alloy disorder and interface roughness have to be included in order to interpret the PL emission spectrum and the decay dynamics in In x Ga 1-x N/GaN MQWs. Important parameters of the In x Ga 1-x N/GaN MQWs, σ x ,σ L , and dτ/dL, denoting the alloy disorder, the interface roughness, and the rate of changing of the exciton decay lifetime with well width, respectively, have been deduced. The method developed here can be used to determine σ x ,σ L , and dτ/dL in any MQW systems with wells being alloy materials. copyright 1998 American Institute of Physics

Application of plant growth regulators at pre-harvest for fruit development of 'PÊRA' oranges

Directory of Open Access Journals (Sweden)

Isolina Maria Leite de Almeida

2004-08-01

Full Text Available The aim of the present work was to evaluate the effects of auxins and gibberellins when applied at pre-harvest to the fruit development, and to the ripening and natural fall of the fruit, in 'Pêra' oranges. Trees of Citrus sinensis Osbeck cv. Pêra, 5 years old, were utilized. The treatments applied were: GA3 + 2,4-D 12.5mg L-1 of each; GA3 + 2,4-D 25mg L-1 ; GA3 + 2,4-D 37.5mg L-1; GA3 + NAA 12.5mg L-1; GA3 + NAA 25mg L-1; GA3 + NAA 37.5mg L-1; NAA + 2,4-D 12.5mg L-1; NAA + 2,4-D 25mg L-1; NAA + 2,4-D 37.5mg L-1; and water (control. The treatments were applied 3 times, at intervals of 45 days. The variables evaluated were: rate of natural fall (%, fruit length and diameter (mm, and fresh fruit weight (g. None of the treatments promoved alterations in the development of the fruits, but they did reduce the natural fall rate, when compared to control, up to 78.05%, inhibiting the fruits' abscision as much as 3 months.O trabalho objetivou avaliar os efeitos de auxinas e giberelinas, combinados e aplicados em pré-colheita no desenvolvimento e na taxa de queda natural de frutos de laranjeira 'Pêra'. Foram utilizadas árvores de laranjeira (Citrus sinensis Osbeck cultivar Pêra com 5 anos de idade. Os tratamentos foram: GA3 + 2,4-D 12,5mg L-1 de cada; GA3 + 2,4-D 25mg L-1; GA3 + 2,4-D 37,5mg L-1; GA3 + NAA 12,5mg L-1; GA3 + NAA 25mg L-1; GA3 + NAA 37,5mg L-1; NAA + 2,4-D 12,5mg L-1; NAA + 2,4-D 25mg L-1; NAA + 2,4-D 37,5mg L-1 e testemunha (água. Durante todo o período experimental foram realizadas três aplicações a intervalos de 45 dias. As variáveis avaliadas foram: Taxa de queda natural dos frutos (%, comprimento (mm, diâmetro (mm e massa fresca dos frutos (g. Nenhum dos tratamentos proporcionaram alterações no desenvolvimento final dos frutos, mas reduziram a taxa de queda natural em comparação com a testemunha em até 78,05%, inibindo a abscisão dos frutos em até três meses.

Structurally characterized 1,1,3,3-tetramethylguanidine solvated magnesium aryloxide complexes: [Mg(mu-OEt)(DBP)(H-TMG)]2, [Mg(mu-OBc)(DBP)(H-TMG)]2, [Mg(mu-TMBA)(DBP)(H-TMG)]2, [Mg(mu-DPP)(DBP)(H-TMG)]2, [Mg(BMP)2(H-TMG)2], [Mg(O-2,6-Ph2C6H3)2 (H-TMG)2].

Science.gov (United States)

Monegan, Jessie D; Bunge, Scott D

2009-04-06

The synthesis and structural characterization of several 1,1,3,3-tetramethylguanidine (H-TMG) solvated magnesium aryloxide complexes are reported. Bu(2)Mg was successfully reacted with H-TMG, HOC(6)H(3)(CMe(3))(2)-2,6 (H-DBP), and either ethanol, a carboxylic acid, or diphenyl phosphate in a 1:1 ratio to yield the corresponding [Mg(mu-L)(DBP)(H-TMG)](2) where L = OCH(2)CH(3) (OEt, 1), O(2)CC(CH(3))(3) (OBc, 2), O(2)C(C(6)H(2)-2,4,6-(CH(3))(3)) (TMBA, 3), or O(2)P(OC(6)H(5))(2) (DPP, 4). Bu(2)Mg was also reacted with two equivalents of H-TMG and HOC(6)H(3)(CMe(3))-2-(CH(3))-6 (BMP) or HO-2,6-Ph(2)C(6)H(3) to yield [Mg(BMP)(2)(H-TMG)(2)] (5) and [Mg(O-2,6-Ph(2)C(6)H(3))(2)(H-TMG)(2)] (6). Compounds 1-6 were characterized by single-crystal X-ray diffraction. Polymerization of l- and rac-lactide with 1 was found to generate polylactide (PLA). A discussion concerning the relevance of compounds 2 - 4 to the structure of Mg-activated phosphatase enzymes is also provided. The bulk powders for all complexes were found to be in agreement with the crystal structures based on elemental analyses, FT-IR spectroscopy, and (1)H, (13)C and (31)P NMR studies.

Doping of GaN{sub 1-x}As{sub x} with high As content

Energy Technology Data Exchange (ETDEWEB)

Levander, A.X.; Novikov, S.V.; Liliental-Weber, Z.; dos Reis, R.; Dubon, O.D.; Wu, J.; Foxon, C.T.; Yu, K.M.; Walukiewicz, W.

2011-09-22

Recent work has shown that GaN{sub 1-x}As{sub x} can be grown across the entire composition range by low temperature molecular beam epitaxy with intermediate compositions being amorphous, but control of the electrical properties through doping is critical for functionalizing this material. Here we report the bipolar doping of GaN{sub 1-x}As{sub x} with high As content to conductivities above 4 S/cm at room temperature using Mg or Te. The carrier type was confirmed by thermopower measurements. Doping requires an increase in Ga flux during growth resulting in a mixed phase material of polycrystalline GaAs:N embedded in amorphous GaN{sub 1-x}As{sub x}.

Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate

Science.gov (United States)

Kojima, Kazunobu; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Shimizu, Mitsuaki; Takahashi, Tokio; Ishibashi, Shoji; Uedono, Akira; Chichibu, Shigefusa F.

2017-06-01

The photoluminescences of ion-implanted (I/I) and epitaxial Mg-doped GaN (GaN:Mg) are compared. The intensities and lifetimes of the near-band-edge and ultraviolet luminescences associated with a MgGa acceptor of I/I GaN:Mg were significantly lower and shorter than those of the epilayers, respectively. Simultaneously, the green luminescence (GL) became dominant. These emissions were quenched far below room temperature. The results indicate the generation of point defects common to GL and nonradiative recombination centers (NRCs) by I/I. Taking the results of positron annihilation measurement into account, N vacancies are the prime candidate to emit GL and create NRCs with Ga vacancies, (VGa) m (VN) n , as well as to inhibit p-type conductivity.

Rapid synthesis of spherical-shaped green-emitting MgGa2O4:Mn2+ phosphor via spray pyrolysis

International Nuclear Information System (INIS)

Choi, Sungho; Kim, Kyoungun; Moon, Young-Min; Park, Byung-Yoon; Jung, Ha-Kyun

2010-01-01

Simple, one-step synthesis of spherical-shaped powder phosphors with aqueous precursors via a spray pyrolysis method is reported. Green-emitting MgGa 2 O 4 :Mn 2+ phosphor with a controlled shape was successfully obtained by spraying under a reductive atmosphere (N 2 + H 2 carrier gas) without high-temperature post-heat treatment. In addition, the corresponding powder phosphors were well dispersed and showed a clean surface morphology compared to an existing cumbersome process using high-temperature post-annealing. The new method may help to prevent surface residual non-radiative defect sites. The result of highly luminescent and spherical morphology, non-aggregated powder phosphor by this procedure holds promise for a cost-effective and rapid synthesis process for conventional inorganic phosphors.

P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)

International Nuclear Information System (INIS)

Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa

1989-01-01

Distinct p-type conduction is realized with Mg-doped GaN by the low-energy electron-beam irradiation (LEEBI) treatment, and the properties of the GaN p-n junction LED are reported for the first time. It was found that the LEEBI treatment drastically lowers the resistivity and remarkably enhances the PL efficiency of MOVPE-grown Mg-doped GaN. The Hall effect measurement of this Mg-doped GaN treated with LEEBI at room temperature showed that the hole concentration is ∼2·10 16 cm -3 , the hole mobility is ∼8 cm 2 /V·s and the resistivity is ∼35Ω· cm. The p-n junction LED using Mg-doped GaN treated with LEEBI as the p-type material showed strong near-band-edge emission due to the hole injection from the p-layer to the n-layer at room temperature. (author)

GA-4/GA-9 honeycomb impact limiter tests and analytical model

International Nuclear Information System (INIS)

Koploy, M.A.; Taylor, C.S.

1991-01-01

General Atomics (GA) has a test program underway to obtain data on the behavior of a honeycomb impact limiter. The program includes testing of small samples to obtain basic information, as well as testing of complete 1/4-scale impact limiters to obtain load-versus-deflection curves for different crush orientations. GA has used the test results to aid in the development of an analytical model to predict the impact limiter loads. The results also helped optimize the design of the impact limiters for the GA-4 and GA-9 Casks

Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN

International Nuclear Information System (INIS)

Kim, S.; Henry, R. L.; Wickenden, A. E.; Koleske, D. D.; Rhee, S. J.; White, J. O.; Myoung, J. M.; Kim, K.; Li, X.; Coleman, J. J.

2001-01-01

Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies have been carried out at 6 K on the ∼1540 nm 4 I 13/2 - 4 I 15/2 emissions of Er 3+ in Er-implanted and annealed GaN. These studies revealed the existence of multiple Er 3+ centers and associated PL spectra in Er-implanted GaN films grown by metalorganic chemical vapor deposition, hydride vapor phase epitaxy, and molecular beam epitaxy. The results demonstrate that the multiple Er 3+ PL centers and below-gap defect-related absorption bands by which they are selectively excited are universal features of Er-implanted GaN grown by different techniques. It is suggested that implantation-induced defects common to all the GaN samples are responsible for the Er site distortions that give rise to the distinctive, selectively excited Er 3+ PL spectra. The investigations of selectively excited Er 3+ PL and PLE spectra have also been extended to Er-implanted samples of Mg-doped GaN grown by various techniques. In each of these samples, the so-called violet-pumped Er 3+ PL band and its associated broad violet PLE band are significantly enhanced relative to the PL and PLE of the other selectively excited Er 3+ PL centers. More importantly, the violet-pumped Er 3+ PL spectrum dominates the above-gap excited Er 3+ PL spectrum of Er-implanted Mg-doped GaN, whereas it was unobservable under above-gap excitation in Er-implanted undoped GaN. These results confirm the hypothesis that appropriate codopants can increase the efficiency of trap-mediated above-gap excitation of Er 3+ emission in Er-implanted GaN. [copyright] 2001 American Institute of Physics

Aplicação de AG3 e CPPU na qualidade da uva 'Itália' em Porto Feliz-SP GA3 and CPPU application on 'Itália' grapes grown in Porto Feliz-SP

Directory of Open Access Journals (Sweden)

Alessandro Rodrigues

2011-03-01

Full Text Available A videira 'Itália' (Vitis vinifera L. é a cultivar de uva fina para mesa mais consumida no Brasil. A qualidade dos cachos é uma característica fundamental, sendo o tamanho das bagas o componente mais valorizado pelos consumidores. Uma das alternativas para incrementar a qualidade das bagas é o uso de biorreguladores. Avaliaram-se, em três ciclos de produção, os efeitos de doses de ácido giberélico (AG3 isolado e associado com forchlorfenuron (CPPU, na qualidade dos cachos de uva Itália produzida em Porto Feliz-SP. A aplicação dos biorreguladores foi realizada aos 25 dias após o florescimento, em delineamento experimental inteiramente casualizado, em fatorial 4X4 (zero, 10; 20 e 30 mg L-1 AG3 X zero, 5; 10 e 15 mg L-1 CPPU, com oito repetições para o primeiro ciclo, e fatorial 3X3 (zero, 20 e 30 mg L-1 AG3 X zero, 10 e 20 mg L-1 CPPU com dez repetições para o segundo e terceiro ciclos. A mistura de 20 mg L-1 de AG3 com 10 mg L-1 de CPPU promoveu o incremento do comprimento e do diâmetro das bagas sem prejuízo da massa dos cachos, melhorando sua qualidade, em Porto Feliz-SP. O uso de CPPU isoladamente acarretou em redução do teor de sólidos solúveis das bagas.'Itália' grape (Vitis vinifera L. is one of the main varieties for fresh market in Brazil. Cluster quality is determinant for commercialization and the berry size is highly valued by consumers. An alternative for improving berry size is the use of growth regulators. The effect of increasing concentrations of gibberellic acid (GA3 and forchlorfenuron (CPPU applied alone or in mixtures was evaluated during three production cycles. Growth regulators were applied 25 days after flowering in the "pea berry size" phenologic stage. Experimental design was completely randomized 4x4 factorial (zero, 10, 20 and 30 mg L-1 GA3 X zero, 5, 10 and 15 mg L-1 CPPU with eight replications for the first cycle, and 3X3 factorial (zero, 20 and 30 mg L-1 GA3 X zero, 10 and 20 mg L-1 CPPU

Effects of IAA, IBA, NAA, and GA3 on rooting and morphological features of Melissa officinalis L. stem cuttings.

Science.gov (United States)

Sevik, Hakan; Guney, Kerim

2013-01-01

This study analyzed the potential of producing Melissa officinalis L. using stem cuttings. Four different hormones (IAA, IBA, NAA, and GA3) were applied to the cuttings, with and without buds, in two doses (1000 mg/L and 5000 mg/L), and after 60 days, 10 morphological characteristics of newly generated plants were detected, and a statistical analysis was carried out. The results of the study show that the cuttings with at least one bud must be used in order to produce M. officinalis using stem cuttings. Even though the auxin group hormones (IAA, IBA, and NAA) do not have an apparent effect on rooting percentage, these hormones were detected to affect the morphological characteristics of the newly generated plants, especially root generation. GA3 application has a considerable effect on stem height.

Plasminogen activator inhibitor 1 4G/5G and -844G/A variants in idiopathic recurrent pregnancy loss.

Science.gov (United States)

Magdoud, Kalthoum; Herbepin, Viviana G; Touraine, Renaud; Almawi, Wassim Y; Mahjoub, Touhami

2013-09-01

Plasminogen activator inhibitor type 1 (PAI-1) regulates fibrinolysis, and the common promoter region variants -675G/A (4G/5G) and -844G/A are associated with increased thrombotic risk. Despite evidence linking altered fibrinolysis with adverse pregnancy events, including idiopathic recurrent pregnancy loss (RPL), the contribution of PAI-1 variants to RPL risk remains controversial. We investigated the association between the PAI-1 -844G/A and 4G/5G (-675G/A) variants with altered risk of RPL. This was a case-control study involving 304 women with confirmed RPL and 371 age- and ethnically matched control women. PAI-1 genotyping was performed by PCR single-specific primer -675 (G/A) and real-time PCR (-844G/A) analysis. Minor allele frequency (MAF) of 4G/5G (P 5G single-nucleotide polymorphism (SNP) was significantly associated with RPL under additive, dominant, and recessive genetic models; no association of -844G/A with RPL was seen irrespective of the genetic model tested. Taking common -844G/5G haplotype as reference (OR = 1.00), multivariate analysis confirmed the association of 4G-containing -844A/4G (P 5G, but not -844G/A, PAI-1 variant is associated with an increased risk of RPL. © 2013 John Wiley & Sons Ltd.

Metal-insulator transition in AlxGa1-xAs/GaAs heterostructures with large spacer width

Science.gov (United States)

Gold, A.

1991-10-01

Analytical results are presented for the mobility of a two-dimensional electron gas in a heterostructure with a thick spacer layer α. Due to multiple-scattering effects a metal-insulator transition occurs at a critical electron density Nc=N1/2i/(4π1/2α) (Ni is the impurity density). The transport mean free path l(t) (calculated in Born approximation) at the metal-insulator transition is l(t)c=2α. A localization criterion in terms of the renormalized single-particle mean free path l(sr) is presented: kFcl(sr)c=(1/2)1/2 (kFc is the Fermi wave number at the critical density). I compare the theoretical results with recent experimental results found in AlxGa1-xAs/GaAs heterostructures with large spacer width: 1200<α<2800 Å. Remote impurity doping and homogeneous background doping are considered. The only fitting parameter used for the theoretical results is the background doping density NB=6×1013 cm-3. My theory is in fair agreement with the experimental results.

Demonstration of solar-blind AlxGa1−xN-based heterojunction phototransistors

International Nuclear Information System (INIS)

Zhang, Lingxia; Tang, Shaoji; Liu, Changshan; Li, Bin; Wu, Hualong; Wang, Hailong; Wu, Zhisheng; Jiang, Hao

2015-01-01

Al 0.4 Ga 0.6 N/Al 0.65 Ga 0.35 N heterojunction phototransistors have been fabricated from the epi-structure grown by low-pressure metal organic chemical vapor deposition on c-plane sapphire substrates. P-type conductivity of the AlGaN base layer was realized by using indium surfactant-assisted Mg-delta doping method. Regrowth technique was used to suppress the Mg memory effect on the n-type emitter. The fabricated devices with a 150-μm-diameter active area exhibited a bandpass spectral response between 235 and 285 nm. Dark current was measured to be less than 10 pA for bias voltages below 2.0 V. A high optical gain of 1.9 × 10 3 was obtained at 6 V bias

Alternaria sp. MG1, a resveratrol-producing fungus: isolation, identification, and optimal cultivation conditions for resveratrol production.

Science.gov (United States)

Shi, Junling; Zeng, Qin; Liu, Yanlin; Pan, Zhongli

2012-07-01

Due to its potential in preventing or slowing the occurrence of many diseases, resveratrol (3,5,4'-trihydroxystilbene) has attracted great research interest. The objective of this study was to identify microorganisms from selected plants that produce resveratrol and to optimize the conditions for resveratrol production. Endophytes from Merlot wine grapes (Vitis vinifera L. cv. Merlot), wild Vitis (Vitis quinquangularis Rehd.), and Japanese knotweed (Polygonum cuspidatum Siebold & Zucc.) were isolated, and their abilities to produce resveratrol were evaluated. A total of 65 isolates were obtained and 21 produced resveratrol (6-123 μg/L) in liquid culture. The resveratrol-producing isolates belonged to seven genera, Botryosphaeria, Penicillium, Cephalosporium, Aspergillus, Geotrichum, Mucor, and Alternaria. The resveratrol-producing capability decreased or was completely lost in most isolates after three rounds of subculture. It was found that only the strain Alternaria sp. MG1 (isolated from cob of Merlot using GA1 medium) had stable and high resveratrol-producing capability in all subcultures. During liquid cultivation of Alternaria sp. MG1 in potato dextrose medium, the synthesis of resveratrol began on the first day, increased to peak levels on day 7, and then decreased sharply thereafter. Cell growth increased during cultivation and reached a stable and high level of biomass after 5 days. The best fermentation conditions for resveratrol production in liquid cultures of Alternaria sp. MG1 were an inoculum size of 6 %, a medium volume of 125 mL in a 250-mL flask, a rotation speed of 101 rpm, and a temperature of 27 °C.

Effects of Mg pre-flow, memory, and diffusion on the growth of p-GaN with MOCVD (Conference Presentation)

Science.gov (United States)

Tu, Charng-Gan; Chen, Hao-Tsung; Chen, Sheng-Hung; Chao, Chen-Yao; Kiang, Yean-Woei; Yang, Chih-Chung

2017-02-01

In MOCVD growth, two key factors for growing a p-type structure, when the modulation growth or delta-doping technique is used, include Mg memory and diffusion. With high-temperature growth (>900 degree C), doped Mg can diffuse into the under-layer. Also, due to the high-pressure growth and growth chamber coating in MOCVD, plenty Mg atoms exist in the growth chamber for a duration after Mg supply is ended. In this situation, Mg doping continues in the following designated un-doped layers. In this paper, we demonstrate the study results of Mg preflow, memory, and diffusion. The results show that pre-flow of Mg into the growth chamber can lead to a significantly higher Mg doping concentration in growing a p-GaN layer. In other words, a duration for Mg buildup is required for high Mg incorporation. Based on SIMS study, we find that with the pre-flow growth, a high- and a low-doping p-GaN layer are formed. The doping concentration difference between the two layers is about 10 times. The thickness of the high- (low-) doping layer is about 40 (65) nm. The growth of the high-doping layer starts 10-15 min after Mg supply starts (Mg buildup time). The diffusion length of Mg into the AlGaN layer beneath (Mg content reduced to doping concentration is reduced to <1%.

Electrically active point defects in Mg implanted n-type GaN grown by metal-organic chemical vapor deposition

Science.gov (United States)

Alfieri, G.; Sundaramoorthy, V. K.; Micheletto, R.

2018-05-01

Magnesium (Mg) is the p-type doping of choice for GaN, and selective area doping by ion implantation is a routine technique employed during device processing. While electrically active defects have been thoroughly studied in as-grown GaN, not much is known about defects generated by ion implantation. This is especially true for the case of Mg. In this study, we carried out an electrical characterization investigation of point defects generated by Mg implantation in GaN. We have found at least nine electrically active levels in the 0.2-1.2 eV energy range, below the conduction band. The isochronal annealing behavior of these levels showed that most of them are thermally stable up to 1000 °C. The nature of the detected defects is then discussed in the light of the results found in the literature.

[67Ga]Gallium-complex with 2-acetylpyridine N4-ortho fluorophenylthiosemicarbazone as a radiotracer for brain tumor diagnosis

International Nuclear Information System (INIS)

Pesquero, Jorge L.

2011-01-01

The aim of this work was to develop a 67 Ga-based SPECT imaging agent derived from 2-acetylpyridine N4-orthofluorophenyl - thiosemicarbazone (PhoF). For this purpose, PhoF was radiolabeled using 67 Ga as radiotracer, and after quality control analysis its biodistribution and SPECT imaging were evaluated on Swiss mice and Nude mice bearing glioblastoma multiform tumor (U87-MG). The labelling of PhoF with 67 GaCl 3 was performed in methanol for 30 minutes at room temperature. Radiochemical analyses were done by HPLC with radioactivity detection. 67 Ga- PhoF was successful produced with 97.5 ± 0.6% of radiochemical purity and high specific activity (1.0 TBq /mmol). 67 Ga- PhoF showed to be a stable compound keeping its stability, when stored at 2-4 deg C. In biodistribution studies, 67 Ga- PhoF displayed not only a significant tumor uptake, but also rapid blood clearance (T 1/2 fast phase = 3.7 min. and T 1/2 slow phase = 127.2 min.) and low accumulations in non target tissues, resulting in high target-to-non target ratios. Scintigraphic images of 67 Ga- PhoF in nude mice bearing U87-MG tumor showed a significant activity in tumor (∼ 7% of total activity) and tumor-to-normal tissue ratio was more than 10-fold higher depending on the organ. Our results suggest that 67 Ga-PhoF possess indispensable characteristics for a good radiopharmaceutical for brain tumor diagnosis. (author)

Properties of the main Mg-related acceptors in GaN from optical and structural studies

OpenAIRE

Monemar, Bo; Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Khromov, Sergey; Izyumskaya, V. N.; Avrutin, V.; Li, X.; Morkoc, H.; Amano, H.; Iwaya, M.; Akasaki, I.

2014-01-01

The luminescent properties of Mg-doped GaN have recently received particular attention, e. g., in the light of new theoretical calculations, where the deep 2.9 eV luminescence band was suggested to be the main optical signature of the substitutional Mg-Ga acceptor, thus, having a rather large binding energy and a strong phonon coupling in optical transitions. We present new experimental data on homoepitaxial Mg-doped layers, which together with the previous collection of data give an improved...

Optical properties of lattice matched In{sub x}Ga{sub 1-x}P{sub 1-y}N{sub y} heteroepitaxial layers on GaP

Energy Technology Data Exchange (ETDEWEB)

Imanishi, T.; Wakahara, A.; Kim, S.M.; Yonezu, H.; Furukawa, Y. [Department of Electrical and Electron Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 411-8580 (Japan)

2005-04-01

Optical constants and band structure of In{sub x}Ga{sub 1-x}P{sub 1-y}N{sub y} lattice matched to GaP (100) substrate are investigated. Nitrogen concentration in the film estimated by X-ray diffraction and X-ray photoelectron spectroscopy, was 1.4%, 1.8% and 3.5%. Refractive index and transition critical points E{sub 0} ({gamma}{sub v} to {gamma}{sub c}), E{sub 1} (L{sub v} to L{sub c}) and E{sub 2} (X{sub v} to X{sub c}) are evaluated by spectroscopic ellipsometry. When N composition increases from 1.4% to 3.5%, both photoluminescence (PL) peak energy, E{sub PL}, and E{sub 0} shift to lower energy, and the energy difference {delta}E=E{sub 0}-E{sub PL} decrease from 380 meV to 110 meV. The large red-sift of E{sub PL} from the E{sub 0} suggest that the luminescence is of defect-related luminescence, and crossover point of indirect band structure estimated by the extrapolation of N-composition dependence of {delta}E is estimated to be around in In{sub 0.1}Ga{sub 0.9}P{sub 0.96}N{sub 0.04}. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Protein Profiling Reveals Novel Proteins in Pollen and Pistil of W22 (ga1; Ga1 in Maize

Directory of Open Access Journals (Sweden)

Jin Yu

2014-05-01

Full Text Available Gametophytic factors mediate pollen-pistil interactions in maize (Zea mays L. and play active roles in limiting gene flow among maize populations and between maize and teosinte. This study was carried out to identify proteins and investigate the mechanism of gametophytic factors using protein analysis. W22 (ga1; which did not carry a gametophytic factor and W22 (Ga1, a near iso-genic line, were used for the proteome investigation. SDS-PAGE was executed to investigate proteins in the pollen and pistil of W22 (ga1 and W22 (Ga1. A total of 44 differentially expressed proteins were identified in the pollen and pistil on SDS-PAGE using LTQ-FTICR MS. Among the 44 proteins, a total of 24 proteins were identified in the pollen of W22 (ga1 and W22 (Ga1 whereas 20 differentially expressed proteins were identified from the pistil of W22 (ga1 and W22 (Ga1. However, in pollen, 2 proteins were identified only in the W22 (ga1 and 12 proteins only in the W22 (Ga1 whereas 10 proteins were confirmed from the both of W22 (ga1 and W22 (Ga1. In contrary, 10 proteins were appeared only in the pistil of W22 (ga1 and 7 proteins from W22 (Ga1 while 3 proteins confirmed in the both of W22 (ga1 and W22 (Ga1. Moreover, the identified proteins were generally involved in hydrolase activity, nucleic acid binding and nucleotide binding. These results help to reveal the mechanism of gametophytic factors and provide a valuable clue for the pollen and pistil research in maize.

Study of some Mg-based ferrites as humidity sensors

International Nuclear Information System (INIS)

Rezlescu, N; Rezlescu, E; Doroftei, C; Popa, P D

2005-01-01

The micostructure and humidity sensitivity of MgFe 2 O 4 + CaO, Mg 0.5 Cu 0.5 Fe 1.8 Ga 0.2 O 4 , Mg 0.5 Zn 0.5 Fe 2 O 4 + KCl and MgMn 0.2 Fe 1.8 O 4 ferrites were investigated. We have found that the humidity sensitivity largely depends on composition, crystallite size, surface area and porosity. The best results concerning humidity sensitivity were obtained for MgMn 0.2 Fe 1.8 O 4 ferrite

[{sup 67}Ga]Gallium-complex with 2-acetylpyridine N4-ortho fluorophenylthiosemicarbazone as a radiotracer for brain tumor diagnosis

Energy Technology Data Exchange (ETDEWEB)

Pesquero, Jorge L. [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Dept. de Fisiologia e Biofisica; Pujatti, Priscilla B.; Araujo, Elaine B. de [Instituto de Pesquisas Energeticas Nucleares (DIRF/IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Diretoria de Radiofarmacia; Lessa, Josane A.; Beraldo, Heloisa [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Dept. de Quimica; Soares, Marcella A.; Santos, Raquel G. dos, E-mail: santosr@cdtn.br [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil)

2011-07-01

The aim of this work was to develop a {sup 67}Ga-based SPECT imaging agent derived from 2-acetylpyridine N4-orthofluorophenyl - thiosemicarbazone (PhoF). For this purpose, PhoF was radiolabeled using {sup 67}Ga as radiotracer, and after quality control analysis its biodistribution and SPECT imaging were evaluated on Swiss mice and Nude mice bearing glioblastoma multiform tumor (U87-MG). The labelling of PhoF with {sup 67}GaCl{sub 3} was performed in methanol for 30 minutes at room temperature. Radiochemical analyses were done by HPLC with radioactivity detection. {sup 67}Ga- PhoF was successful produced with 97.5 {+-} 0.6% of radiochemical purity and high specific activity (1.0 TBq /mmol). {sup 67}Ga- PhoF showed to be a stable compound keeping its stability, when stored at 2-4 deg C. In biodistribution studies, {sup 67}Ga- PhoF displayed not only a significant tumor uptake, but also rapid blood clearance (T{sub 1/2} {sub fast} {sub phase}= 3.7 min. and T{sub 1/2} {sub slow} {sub phase}= 127.2 min.) and low accumulations in non target tissues, resulting in high target-to-non target ratios. Scintigraphic images of {sup 67}Ga- PhoF in nude mice bearing U87-MG tumor showed a significant activity in tumor ({approx} 7% of total activity) and tumor-to-normal tissue ratio was more than 10-fold higher depending on the organ. Our results suggest that {sup 67}Ga-PhoF possess indispensable characteristics for a good radiopharmaceutical for brain tumor diagnosis. (author)

Gallium hole traps in irradiated KTiOPO{sub 4}:Ga crystals

Energy Technology Data Exchange (ETDEWEB)

Grachev, V.; Meyer, M.; Malovichko, G. [Physics Department, Montana State University, Bozeman, Montana 59717 (United States); Hunt, A. W. [Idaho Accelerator Center, Idaho State University, Pocatello, Idaho 83209 (United States)

2014-12-07

Nominally pure and gallium doped single crystals of potassium titanyl phosphate (KTiOPO{sub 4}) have been studied by Electron Paramagnetic Resonance at low temperatures before and after irradiation. Irradiation with 20 MeV electrons performed at room temperature and liquid nitrogen temperature caused an appearance of electrons and holes. Gallium impurities act as hole traps in KTiOPO{sub 4} creating Ga{sup 4+} centers. Two different Ga{sup 4+} centers were observed, Ga1 and Ga2. The Ga1 centers are dominant in Ga-doped samples. For the Ga1 center, a superhyperfine structure with one nucleus with nuclear spin ½ was registered and attributed to the interaction of gallium electrons with a phosphorus nucleus or proton in its surrounding. In both Ga1 and Ga2 centers, Ga{sup 4+} ions substitute for Ti{sup 4+} ions, but with a preference to one of two electrically distinct crystallographic positions (site selective substitution). The Ga doping eliminates one of the shortcomings of KTP crystals—ionic conductivity of bulk crystals. However, this does not improve significantly the resistance of the crystals to electron and γ-radiation.

Vibrational spectra of 1-hydroxy- and 1,4-dihydroxyanthraquinones and their magnesium chelate complexes. I. Isotopic effects of OH/OD and 24Mg/26Mg substitutions

International Nuclear Information System (INIS)

Kirszenbaum, Marek

1977-01-01

The vibrational spectra of 1-hydroxy- and 1,4-dihydroxyanthraquinones, their deuterated derivatives and their 24 Mg/ 26 Mg chelate complexes are examined in the spectral region 1700-250cm -1 . The study of deuteroxyanthraquinones allow an assignment of the OH/OD group vibrations and show the multiple coupling of the delta OH vibrations with the vCC and delta CH quinonic vibrations. These results lead to a modification of some spectral assignments of magnesium chelate complexe of 1-OH-AQ. The isotopic 24 Mg/ 26 Mg substitution enables the chelate ring vibrations which depend on the motions of the magnesium atom to be observed. The vC=O and vC-O vibrations frequencies of magnesium chelate complexe [Mg(1,4-O 2 -AQ)]sub(n) show an important difference of the chelate ring electronic state in comparison of those of 1,4-(OH) 2 -AQ. The discussion of the infrared and Raman spectra in the Mg-O vibrations region lead to the conclusion that the configuration of oxygens arround the magnesium is tetrahedral [fr

Superconducting properties of Zr1+xNi2-xGa and Zr1-xNi2+xGa Heusler compounds

Directory of Open Access Journals (Sweden)

Saad Alzahrani

2017-05-01

Full Text Available The superconducting properties of a series of Zr1+xNi2-xGa and Zr1-xNi2+xGa compounds have been investigated by x-ray diffraction, electrical resistivity, dc magnetization, and ac susceptibility measurements. While the parent compound, ZrNi2Ga, exhibited the cubic L21 Heusler structure, multiple non-cubic structures formed in the Zr and Ni rich doped materials. For x ≤ 0.3, all Zr1-xNi2+xGa compounds demonstrated superconducting behavior, but no superconductivity was observed in the Zr1+xNi2-xGa alloys for x > 0.2. The magnetization data revealed that all materials in both Zr1+xNi2-xGa and Zr1-xNi2+xGa series exhibited type-II superconductivity. With increasing doping concentration x, the paramagnetic ordering were enhanced in both systems while the superconducting properties were found to weaken. The observations are discussed considering the structural disorders in the systems.

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

International Nuclear Information System (INIS)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

2016-01-01

Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

Low temperature storage of NAA, GA3 and 2,4-D treated citrus budsticks Armazenamento em baixa temperatura de hastes porta-borbulhas de citros tratadas com ANA, GA3 e 2,4-D

Directory of Open Access Journals (Sweden)

Luiz Carlos Chamhum Salomão

2008-01-01

Full Text Available Cold storage allows citrus budstick conservation for several months, although gradual bud viability loss and abscission of leaf petioles is observed. This study aimed to maintain bud viability reducing leaf petiole abscission in budsticks of 'Baianinha' and 'Valencia' sweet oranges (C. sinensis Osbeck, 'Tahiti' lime (C. latifolia Tanaka, and 'Murcott' tangor (C. sinensis × C. reticulata, using NAA, GA3, 2,4-D, and low temperature storage. After a 15-minutes-immersion in distilled water and NAA and GA3 solutions at concentrations of 10, 100, 500 and 1000 µmol L-1, and 2,4-D solutions at concentrations of 1, 10, 50 and 100 µmol L-1, the shoots were stored in polyethylene bags at 5 ± 1ºC for 74 days. Percentage of leaf petiole abscission, fresh and dry matter losses, bud viability, and growth flush were evaluated. NAA and 2,4-D had the highest efficiency for petiole abscission inhibition, reaching almost 99% of success. The packaging system and shoot storage under low temperature efficiently reduced fresh and dry matter losses. Bud viability of 'Baianinha', 'Valencia' and 'Murcott' shoots was not reduced by storage, maintaining above 95% of grafting success. NAA, GA3 and 2,4-D treatments had no influence on sprout growth.O armazenamento refrigerado possibilita a conservação de hastes porta-borbulhas de citros por vários meses, embora ocorra perda gradual da viabilidade das borbulhas e abscisão dos pecíolos foliares. Este estudo objetivou manter a viabilidade das borbulhas e reduzir a abscisão dos pecíolos foliares das hastes porta-borbulhas das laranjeiras 'Baianinha' e 'Valência'(C. sinensis Osbeck, da lima ácida 'Tahiti'(C. latifolia Tanaka e da tangoreira 'Murcote' (C. sinensis × C. reticulata por meio do tratamento com ANA, GA3, 2,4-D e armazenamento refrigerado. As hastes foram imersas por 15 minutos em água destilada e em soluções com os reguladores de crescimento ANA e GA3 nas concentrações 10, 100, 500 e 1000 µmol L-1 e

Preparation and preclinical evaluation of 68Ga-DOTA-amlodipine for L-type calcium channel imaging

Science.gov (United States)

Firuzyar, Tahereh; Jalilian, Amir Reza; Aboudzadeh, Mohammad Reza; Sadeghpour, Hossein; Shafiee-Ardestani, Mahdi; Khalaj, Ali

2016-01-01

Aim: In order to develop a possible tracer for L-type calcium channel imaging, we here report the development of a Ga-68 amlodipine derivative for possible PET imaging. Materials and Methods: Amlodipine DOTA conjugate was synthesized, characterized and went through calcium channel blockade, toxicity, apoptosis/necrosis tests. [68Ga] DOTA AMLO was prepared at optimized conditions followed by stability tests, partition coefficient determination and biodistribution studies using tissue counting and co incidence imaging up to 2 h. Results: [68Ga] DOTA AMLO was prepared at pH 4–5 in 7–10 min at 95°C in high radiochemical purity (>99%, radio thin layer chromatography; specific activity: 1.9–2.1 GBq/mmol) and was stable up to 4 h with a log P of −0.94. Calcium channel rich tissues including myocardium, and tissues with smooth muscle cells such as colon, intestine, and lungs demonstrated significant uptake. Co incidence images supported the biodistribution data up to 2 h. Conclusions: The complex can be a candidate for further positron emission tomography imaging for L type calcium channels. PMID:27833311

11.9 W output power at 4 GHz from 1 mm AlGaN/GaN HEMT

NARCIS (Netherlands)

Krämer, M.C.J.C.M.; Karouta, F.; Kwaspen, J.J.M.; Rudzinski, M.; Larsen, P.K.; Suijker, E.M.; Hek, P.A. de; Rödle, T.; Volokhine, I.; Kaufmann, L.M.F.

2008-01-01

A high electrical breakdown field combined with a high electron saturation velocity make GaN very attractive for high power high frequency electronics. The maximum drain current densities of AlGaN/GaN HFETs range from 1.0 A/mm to 1.5 A/mm [1-3]. Hence, it is obvious that breakdown voltages over 160

Optimization of soybean (glycine max L.) regeneration for korean cultivars

International Nuclear Information System (INIS)

Phat, P.; Rehman, S. U.; Ju, H. J.; Jung, H. I.

2015-01-01

Tissue culture could provide key insights into the development of transgenic plants, production of good cultivars and secondary metabolites, conservation of endangered plants, and safeguarding of germplasms. In this study, the effects of shoot induction media, explants, cultivars, and phytohormone concentrations on the regeneration efficiency of Korean soybean cultivars were evaluated. Restricted dormancy and poor germination may affect regeneration, depending on the type of germination medium or initiation of phytohormone treatment. Therefore, we analyzed the effects of different germination media containing plant growth regulators, i.e. 6-benzyladenine (BAP), gibberellic acid 3 (GA /sub 3/), and naphthalene acetic acid (NAA), prior to investigating the influences of explant types, media with or without vitamins, cultivars, and different phytohormones (BAP and GA3). A high frequency of germination was observed in Murashige and Skooge (MS) medium with vitamins supplemented with 1 mg L /sup -1/ BAP and 0.25 mg L /sup -1/ GA /sub 3/. Cotyledonary node explants and Gamborg B5 with vitamins supplemented with 1 mg L /sup -1/ BAP and 0.17 mg L /sup -1/ GA /sub 3/ in callus induction medium (CIM) and 1 mg L /sup -1/ BAP in shoot induction medium (SIM) were found to be the most efficient conditions for induction of soybean regeneration, both in callus development and shoot regeneration. Two Korean soybean cultivars, cv. Daepung and Nampung, showed similar development of shoot regeneration efficiency, but significantly different shoot induction times. Therefore, the protocol reported here may be used for further development of regeneration efficiency and can be employed for efficient transformation in soybeans. (author)

Magnetic domains in martensite of Ni-Mg-Ga alloy

International Nuclear Information System (INIS)

Kokorin, V.V.; Babij, O.M.; Dubinko, S.V.; Prokopov, A.R.

2006-01-01

The structural changes attendant on intermartensitic transformation in a Ni-Mg-Ga shape memory alloy are considered using magneto-optical visualization with the help of ferrite-garnet monocrystalline films. It is established that on the intermartensitic transformation the complete reorganization of martensite macrostructure fails. Martensite crystals resulted from the basic transformation change somewhat their sizes on intermartensitic transition. The existence of large-scale labyrinth magnetic domain structure is revealed [ru

Effect of 2,4-D Levels and Tropical Maize Genotypes (Zea mays L

African Journals Online (AJOL)

LETA TULU BEDADA

) selection medium having 5 g/l mannose as selective agent. .... LS macro-and micro-salts, 1.5 mg/l 2,4-D, 1 g/l casein hydrolysate, 68.5 g/l sucrose, 36 g/l ... thiamine HCl, 2 mg/l glycine†; †Glycine is an amino acid but it was included in vitamin.

Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices

Science.gov (United States)

Kurose, Noriko; Matsumoto, Kota; Yamada, Fumihiko; Roffi, Teuku Muhammad; Kamiya, Itaru; Iwata, Naotaka; Aoyagi, Yoshinobu

2018-01-01

A method for laser-induced local p-type activation of an as-grown Mg-doped GaN sample with a high lateral resolution is developed for realizing high power vertical devices for the first time. As-grown Mg-doped GaN is converted to p-type GaN in a confined local area. The transition from an insulating to a p-type area is realized to take place within about 1-2 μm fine resolution. The results show that the technique can be applied in fabricating the devices such as vertical field effect transistors, vertical bipolar transistors and vertical Schottkey diode so on with a current confinement region using a p-type carrier-blocking layer formed by this technique.

Aplicação de reguladores vegetais no retardamento da abscisão de frutos de laranjeira-'Hamlin'

Directory of Open Access Journals (Sweden)

ALMEIDA ISOLINA MARIA LEITE DE

2002-01-01

Full Text Available O trabalho avaliou os efeitos de auxinas e giberelina, combinadas e aplicadas em pré-colheita no desenvolvimento e na porcentagem de queda natural dos frutos de laranjeira-'Hamlin' (Citrus sinensis Osbeck. Foram realizadas 3 aplicações a intervalos de 45 dias dos seguintes tratamentos, via foliar: GA3 + NAA a 12,5mg.L-1 de cada; GA3 + NAA a 25mg.L-1; GA3 + 2,4-D a 12,5mg.L-1; GA3 + 2,4-D a 25mg.L-1; NAA + 2,4-D a 12,5mg.L-1; NAA + 2,4-D a 25mg.L-1; testemunha (água. As variáveis avaliadas foram: porcentagem de queda natural dos frutos (%, massa fresca de frutos (g e teor de suco no fruto (%. Os resultados obtidos mostram que a utilização de reguladores vegetais atrasa a queda natural de frutos de laranjeira-'Hamlin', podendo-se prolongar o período de colheita, destacando-se o tratamento com GA3 25mg.L-1 +2,4-D 25mg.L-1 e também não influenciaram no aumento da massa fresca e no teor de suco dos frutos.

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

Science.gov (United States)

Kyle, Erin C. H.; Kaun, Stephen W.; Young, Erin C.; Speck, James S.

2015-06-01

We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5-6 × 1019 cm-3 as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 1018 cm-3. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

Structural and magnetic properties of Mg-Zn ferrites (Mg1−xZnxFe2O4) prepared by sol-gel method

International Nuclear Information System (INIS)

Reyes-Rodríguez, Pamela Yajaira; Cortés-Hernández, Dora Alicia; Escobedo-Bocardo, José Concepción; Almanza-Robles, José Manuel; Sánchez-Fuentes, Héctor Javier; Jasso-Terán, Argentina; De León-Prado, Laura Elena; Méndez-Nonell, Juan; Hurtado-López, Gilberto Francisco

2017-01-01

In this study, the Mg 1−x Zn x Fe 2 O 4 nanoparticles (x=0–0.9) were prepared by sol-gel method. These ferrites exhibit an inverse spinel structure and the lattice parameter increases as the substitution of Zn 2+ ions is increased. At lower Zn content (0.1≤x≤0.5), saturation magnetization (Ms) increases, while it decreases at higher Zn content (x≥6). The remnant magnetization (0.17–2.0 emu/g) and coercive field (6.0–60 Oe) indicate a ferrimagnetic behavior. The average core diameter of selected ferrites is around 15 nm and the nanoparticles morphology is quasi spherical. The heating ability of some Mg 0.9 Zn 0.1 Fe 2 O 4 and Mg 0.7 Zn 0.3 Fe 2 O 4 aqueous suspensions indicates that the magnetic nanoparticles can increase the medium temperature up to 42 °C in a time less than 10 min - Highlights: • Magnetic nanoparticles of Mg 1−x Zn x Fe 2 O 4 were synthesized by sol-gel method. • Nanoparticles showing a single spinel crystalline structure were obtained. • Aqueous suspensions of Mg 0.7 Zn 0.3 Fe 2 O 4 and Mg 0.9 Zn 0.1 Fe 2 O 4 show heating ability.

Luminescent and structural properties of Zn_xMg_1_-_xWO_4 mixed crystals

International Nuclear Information System (INIS)

Krutyak, N.; Nagirnyi, V.; Spassky, D.; Tupitsyna, I.; Dubovik, A.; Belsky, A.

2016-01-01

The structural and luminescent properties of perspective scintillating Zn_xMg_1_-_xWO_4 mixed crystals were studied. The following characteristics were found to depend linearly on x value: the energy of several vibrational modes detected by Raman spectroscopy, the bandgap width deduced from the shift of the excitation spectrum onset of a self-trapped exciton (STE) emission, the position of thermally stimulated luminescence peaks. It is also shown that the thermal stability of the STE luminescence decreases gradually when x decreases. These data indicate that each Zn_xMg_1_-_xWO_4 mixed crystal is not a mixture of two constituents, but possesses its original crystalline structure, as well as optical and luminescent properties. - Highlights: • The structural and luminescent properties of Zn_xMg_1_-_xWO_4 were studied. • The energy of Raman modes, the bandgap width, TSL peak position linearly depend on x. • Each Zn_xMg_1_-_xWO_4 possesses its original crystalline structure.

Phase transition induced anelasticity in Fe–Ga alloys with 25 and 27%Ga

Energy Technology Data Exchange (ETDEWEB)

Golovin, I.S., E-mail: i.golovin@misis.ru [National University of Science and Technology “MISIS”, Leninsky ave. 4, 119049, Moscow (Russian Federation); Balagurov, A.M., E-mail: bala@nf.jinr.ru [Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, 141980, Dubna (Russian Federation); Bobrikov, I.A. [Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, 141980, Dubna (Russian Federation); Palacheva, V.V. [National University of Science and Technology “MISIS”, Leninsky ave. 4, 119049, Moscow (Russian Federation); Cifre, J. [Universitat de les Illes Balears, Ctra. De Valldemossa, km.7.5, E-07122, Palma de Mallorca (Spain)

2016-08-05

Neutron diffraction and mechanical spectroscopy techniques were applied to study phase transitions in Fe–Ga alloys with 25 and 27 at.% Ga. The following sequences of phase transitions at continuous heating and subsequent cooling in the 20–900 °C temperature range were recorded: D0{sub 3} → L1{sub 2} (limited amount) → A2(B2) was recorded at heating and A2(B2) → D0{sub 3} at cooling for Fe-24.8Ga alloy, and the D0{sub 3} → L1{sub 2} → D0{sub 19} → A2(B2) was recorded at heating and A2(B2) → L1{sub 2} at cooling for Fe-27.4Ga alloy. Thus, the difference in 2.6 at.%Ga between two studied compositions with D0{sub 3} structure leads to their different structures after heating to 900 °C. These transition sequences determine different temperature dependencies of elastic and anelastic properties. The D0{sub 3} → A2(B2) transition (in Fe-25Ga) does not lead to a well-pronounced anelastic effect, in contrast the D0{sub 3} → L1{sub 2} transition (in Fe-27Ga) generates internal stresses due to a different rate of an increase in the lattice parameter with temperature and leads to a well-pronounced transient internal friction effect. - Highlights: • Neutron diffraction technique is used to study in situ phase transitions in Fe-25 and 27 at.% Ga. • D0{sub 3} → L1{sub 2} → D0{sub 19} → A2/B2 transitions were recorded at instant heating in Fe-27 at.% Ga. • D0{sub 3} → L1{sub 2} (limited amount) → A2(B2) was recorded at instant heating in Fe-25 at.% Ga • The D0{sub 3} → L1{sub 2} transition generates internal stresses and leads to elastic and anelastic response.

Lattice modes and the Jahn-Teller ferroelectric transition of GaV.sub.4./sub.S.sub.8./sub.

Czech Academy of Sciences Publication Activity Database

Hlinka, Jiří; Borodavka, Fedir; Rafalovskyi, Iegor; Dočekalová, Zuzana; Pokorný, Jan; Gregora, Ivan; Tsurkan, V.; Nakamura, H.; Mayr, F.; Kuntscher, C.A.; Loidl, A.; Bordács, S.; Szaller, D.; Lee, H.-J.; Lee, J.H.; Kézsmárki, I.

2016-01-01

Roč. 94, č. 6 (2016), 1-4, č. článku 060104. ISSN 2469-9950 R&D Projects: GA ČR GA13-15110S Institutional support: RVO:68378271 Keywords : augmented-wave method * crystals * phase Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016

Nanoblast synthesis and consolidation of (La0.8Sr0.2)(Ga0.9Mg0.1)O(3-delta) under Spark plasma sintering conditions.

Science.gov (United States)

Vasylkiv, Oleg; Borodianska, Hanna; Badica, Petre; Zhen, Yongda; Tok, Alfred

2009-01-01

Four-cation nanograined strontium and magnesium doped lanthanum gallate (La0.8Sr0.2) (Ga0.9Mg0.1)O(3-delta) (LSGM) and its composite with 2 wt% of ceria (LSGM-Ce) were prepared. Morphologically homogeneous nanoreactors, i.e., complex intermediate metastable aggregates of desired composition were assembled by spray atomization technique, and subsequently loaded with nanoparticles of highly energetic C3H6N6O6. Rapid nanoblast calcination technique was applied and the final composition was synthesized within the preliminary localized volumes of each single nanoreactor on the first step of spark plasma treatment. Subsequent SPS consolidations of nanostructured extremely active LSGM and LSGM-Ce powders were achieved by rapid treatment under pressures of 90-110 MPa. This technique provided the heredity of the final structure of nanosize multimetal oxide, allowed the prevention of the uncontrolled agglomeration during multicomponent aggregates assembling, subsequent nanoblast calcination, and final ultra-rapid low-temperature SPS consolidation of nanostructured ceramics. LaSrGaMgCeO(3-delta) nanocrystalline powder consisting of approximately 11 nm crystallites was consolidated to LSGM-Ce nanoceramic with average grain size of approximately 14 nm by low-temperature SPS at 1250 degrees C. Our preliminary results indicate that nanostructured samples of (La0.8Sr0.2)(Ga0.9Mg0.1)O(3-delta) with 2 wt% of ceria composed of approximataley 14 nm grains can exhibit giant magnetoresistive effect in contrast to the usual paramagnetic properties measured on the samples with larger grain size.

N-acyl-L-homoserine lactone-mediated regulation of the Lip secretion system in Serratia liquefaciens MG1

DEFF Research Database (Denmark)

Riedel, K.; Ohnesorg, T.; Krogfelt, K.A.

2001-01-01

The analysis of Serratia liquefaciens MG1 'luxAB insertion mutants that are responsive to N-butanoyl-L-homoserine lactone revealed that expression of lipB is controlled by the swr quorum-sensing system. LipB is part of the Lip exporter, a type I secretion system, which is responsible for the secr......The analysis of Serratia liquefaciens MG1 'luxAB insertion mutants that are responsive to N-butanoyl-L-homoserine lactone revealed that expression of lipB is controlled by the swr quorum-sensing system. LipB is part of the Lip exporter, a type I secretion system, which is responsible...

Tetrahedral 1B4Sb nanoclusters in GaP:(B, Sb)

Energy Technology Data Exchange (ETDEWEB)

Elyukhin, V A, E-mail: elyukhin@cinvestav.m [Departamento de Ingenieria Electrica-SEES, CINVESTAV-IPN, Avenida IPN 2508, Col. San Pedro Zacatenco, C. P. 07360, Mexico, D. F. (Mexico)

2009-05-01

Self-assembling conditions of 1B4Sb tetrahedral nanoclusters in GaP doped with boron and Sb isoelectronic impurities are represented in the ultradilute and dilute limits of the boron and Sb contents, respectively. The fulfilled estimates demonstrated the preferential complete or almost complete allocation of boron atoms in 1B4Sb nanoclusters at temperatures of 500 {sup 0}C and 900 {sup 0}C, respectively. The significant decrease of the sum of the free energies of the constituent compounds is the main origin of self-assembling. The reduction of the strain energy is the additional cause of this phenomenon.

A comparative study of Mg and Pt contacts on semi-insulating GaAs: Electrical and XPS characterization

Energy Technology Data Exchange (ETDEWEB)

Dubecký, F., E-mail: elekfdub@savba.sk [Institute of Electrical Engineering, SAS, Dúbravská cesta 9, Bratislava, SK-84104 (Slovakia); Kindl, D.; Hubík, P. [Institute of Physics CAS, v.v.i., Cukrovarnická 10, CZ-16200 Prague (Czech Republic); Mičušík, M. [Polymer Institute, SAS, Dúbravská cesta 9, Bratislava, SK-84541 (Slovakia); Dubecký, M. [Department of Physics, Faculty of Science, University of Ostrava, 30. dubna 22, CZ-70103 Ostrava 1 (Czech Republic); Boháček, P.; Vanko, G. [Institute of Electrical Engineering, SAS, Dúbravská cesta 9, Bratislava, SK-84104 (Slovakia); Gombia, E. [IMEM-CNR, Parco area delle Scienze 37/A, Parma, I-43010 (Italy); Nečas, V. [Faculty of Electrical Engineering and Information Technology, SUT, Ilkovičova 3, Bratislava, SK-81219 (Slovakia); Mudroň, J. [Department of Electronics, Academy of Armed Forces, Demänová 393, Liptovský Mikuláš, SK-03106 (Slovakia)

2017-02-15

Highlights: • Explored were diodes with full-area low/high work function metal contacts on semi-insulating GaAs (S). • The Mg-S-Mg diode is promising for radiation detectors for its low high-field current. • The XPS analysis of Mg-S interface shows presence of MgO instead of Mg metal. - Abstract: We present a comparative study of the symmetric metal-SI GaAs-metal (M-S-M) diodes with full-area contacts on both device sides, in order to demonstrate the effect of contact metal work function in a straightforward way. We compare the conventional high work function Pt contact versus the less explored low work function Mg contact. The Pt-S-Pt, Mg-S-Mg and mixed Mg-S-Pt structures are characterized by the current-voltage measurements, and individual Pt-S and Mg-S contacts are investigated by the X-ray photoelectron spectroscopy (XPS). The transport measurements of Mg-S-Pt structure show a significant current decrease at low bias while the Mg-S-Mg structure shows saturation current at high voltages more than an order of magnitude lower with respect to the Pt-S-Pt reference. The phenomena observed in Mg-containing samples are explained by the presence of insulating MgO layer at the M-S interface, instead of the elementary Mg, as confirmed by the XPS analysis. Alternative explanations of the influence of MgO layer on the effective resistance of the structures are presented. The reported findings have potential applications in M-S-M sensors and radiation detectors based on SI GaAs.

Superhalogen properties of hetero-binuclear anions MM‧F4- and MM″F5- (M = Li, Na, M‧ = Be, Mg, Ca; M″ = B, Al, Ga)

Science.gov (United States)

Yang, Hui; Li, Ying; He, Hui-Min; Tong, Jing; Wu, Di; Li, Zhi-Ru

2017-09-01

Hetero-binuclear superhalogen anions, namely MM‧F4- and MM″F5- (M = Li, Na; M‧ = Be, Mg, Ca; M″ = B, Al, Ga), have been theoretically characterized at the MP2(FULL)/6-311+G(3df) level. It is found that two central atoms can be linked by at most three fluorine ligands. The large vertical electron detachment energies (VDEs, 7.449-8.978 eV) verify the superhalogen identity of these anions. The VDEs of both MM‧F4- and MM″F5- decrease when the atomic size of M increases whereas increase with the size of M‧ and M″. Besides, the extra electron distribution also has effect on the VDEs of such superhalogen anions.

Sugammadex 4.0 mg kg-1 reversal of deep rocuronium-induced neuromuscular blockade

DEFF Research Database (Denmark)

Yu, Buwei; Wang, Xiangrui; Hansen, Søren Helbo

2014-01-01

Objective: Maintenance of deep Neuro Muscular Blockade (NMB) until the end of surgery may be beneficial in some surgical procedures. The selective relaxant binding agent sugammadex rapidly reverses deep levels of rocuronium-induced NMB. The purpose of this study was to evaluate the efficacy...... and safety of sugammadex 4.0 mg kg-1 for reversal of deep rocuronium-induced NMB in Chinese and Caucasian patients. Methods: This was an open-label, multicenter, prospective Phase III efficacy study in adult American Society of Anesthesiologists Class 1-3 patients scheduled for surgery under general...... anesthesia and requiring deep NMB. All patients received intravenous propofol and opioids for induction and maintenance of anesthesia, and a single intubation dose of rocuronium 0.6 mg/kg, with maintenance doses of 0.1-0.2 mg/kg as required. Sugammadex 4.0 mg/kg was administered after the last dose...

Plántulas de tomate (Solanum lycopersicum L. provenientes de semillas embebidas en diferentes soluciones de giberelinas (GA₃

Directory of Open Access Journals (Sweden)

Balaguera-López Helber Enrique

2009-04-01

Full Text Available

La obtención de plántulas de tomate vigorosas y en menor tiempo para el trasplante se ha convertido en un factor clave a la hora de iniciar la producción. Con el fin de disminuir el efecto postrasplante e impulsar el desarrollo vegetativo de las plántulas, se sometieron semillas del híbrido larga vida Daniela a imbibición (6, 12, 18, 24, 30 y 36 horas en tres concentraciones de ácido giberélico (300, 600 y 900 mg L^-1 y se sembraron en bandejas. Se utilizó un diseño completamente aleatorizado, 18 tratamientos más un testigo con cuatro repeticiones durante cuatro semanas, primera fase. Luego en segunda fase, se trasplantaron cuatro plantas al azar por tratamiento en bolsas de polietileno, y cuatro semanas después se evaluaron. El tratamiento de 36 horas de imbibición y 300 mg L^-1 de GA₃ mostró diferencias estadísticas en la primera fase para el área foliar, masa fresca de hojas, tallo y raíces y longitud de raíces, y en la segunda fase en la masa seca de hojas, tallo y raíz y en el área foliar. Semillas de tomate embebidas en 300 mg L^-1 de GA₃ generan plántulas con mayor vigor.

In vitro propagation of silybum marianum (l.) gaertn. and genetic fidelity assessment of micropropagated plants

International Nuclear Information System (INIS)

Lv, Y.W.; Wamg, R.J.; Yang, Z.S.; Wang, Y.J.

2017-01-01

Silybum marianum (milk thistle), an annual and biennial herbaceous plant, has been used to treat liver disease for 2000 years. An efficient system for micropropagation from leaf explants of wild-grown S. marianum was successfully established and the genetic fidelity of micropropagated plants was assessed using PCR-based random amplified polymorphic DNA (RAPD). The highest frequency (98.9%) of callus induction was obtained from explants cultivated for 4 weeks on Murashige and Skoog (MS) medium supplemented with 1.5 mg l/sup -1/N6-Benzylaminopurine (BA) and 2.0 mg l/sup -1/ alpha-Naphthaleneacetic acid (NAA). The optimal medium for shoots organogenesis was MS supplemented with 3.0 mg l/sup -1/ Gibberellic acid (GA/sub 3/) and 1.0 mg l/sup -1/NAA, while shoot proliferation was accomplished in MS supplemented with 1.0 mg l/sup -1/BA and 0.3 mg l/sup -1/NAA. Rooting (94.5%) of these shoots was achieved after 4 weeks on 1/2 MS medium supplemented with 1.0 mg l/sup -1/ IBA. A total of 92% of the plants were surviving 6 weeks after transplantation of plantlets to soil. RAPD analysis revealed that the genetic fidelity between the parent and the In vitro-raised plantlets exhibited 100% similarity. This confirmed the true-to-type nature of the In vitro-raised clones. |(author)

Electrical conductivity of cobalt doped La 0.8Sr 0.2Ga 0.8Mg 0.2O 3- δ

Science.gov (United States)

Wang, Shizhong; Wu, Lingli; Liang, Ying

La 0.8Sr 0.2Ga 0.8Mg 0.2O 3- δ (LSGM8282), La 0.8Sr 0.2Ga 0.8Mg 0.15Co 0.05O 3- δ (LSGMC5) and La 0.8Sr 0.2Ga 0.8Mg 0.115Co 0.085O 3- δ (LSGMC8.5) were prepared using a conventional solid-state reaction. Electrical conductivities and electronic conductivities of the samples were measured using four-probe impedance spectrometry, four-probe dc polarization and Hebb-Wagner polarization within the temperature range of 973-1173 K. The electrical conductivities in LSGMC5 and LSGMC8.5 increased with decreasing oxygen partial pressures especially in the high (>10 -5 atm) and low oxygen partial pressure regions (lanthanum gallate samples increased with increasing concentration of cobalt, suggesting that the concentration of cobalt should be optimized carefully to maintain a high electrical conductivity and close to 1 oxygen ion transference number.

Sensitivity of the mayfly Adenophlebia auriculata (Ephemeroptera: Leptophlebiidae) to MgSO4 and Na2SO4

Science.gov (United States)

Vellemu, E. C.; Mensah, P. K.; Griffin, N. J.; Odume, O. N.

2017-08-01

Acid mine drainage (AMD) continues to deteriorate water quality in freshwater ecosystems. Sulphates, a major salt component in AMD, can exacerbate AMD effects in freshwater because salts are toxic to aquatic life in high concentrations. Sulphates are predominant in South African AMD impacted freshwater ecosystems. In this study, the sensitivity of nymphs of the mayfly Adenophlebia auriculata (Ephemeroptera: Leptophlebiidae) was investigated by exposing the organisms to magnesium sulphate (MgSO4) and sodium sulphate (Na2SO4) as models of mining salinisation in short-term (96 h) and long-term (240 h) in static system tests. Short-term and long-term lethal concentrations of each salt were estimated using regression analyses. The results indicated that A. auriculata was more sensitive to MgSO4 (LC50 = 3.81 g/L) than Na2SO4 (LC50 = 8.78 g/L) after short-term exposures. However, this species became sensitive to Na2SO4 (LC10 = 0.19 g/L) but tolerant to MgSO4 (LC10 = 0.35 g/L) after long-term exposures. These results suggest that the 0.25 g/L sulphate compliance limit for South Africa is inadequate to protect A. auriculata from Na2SO4 toxicity in the long-term, yet it overprotects this species from MgSO4 exposures in the short-term. The findings of this study are an important major step in understanding the ecological effects of AMD to aquatic life.

Labeling of antibodies with a 67Ga-phenolic aminocarboxylic acid chelate. Pt. 1

International Nuclear Information System (INIS)

Schuhmacher, J.; Matys, R.; Hauser, H.; Maier-Borst, W.; Matzku, S.

1986-01-01

As a chelating agent for labeling antibodies (Abs) with metallic radionuclides, a propionic acid substituted ethylenediamine N, N'-di-[(o-hydroxyphenyl) acetic acid] (P-EDDHA), which tighly complexes 67 Ga, was synthetized. The 67 Ga-P-EDDHA chelate was coupled in aqueous solution to IgG at a molar ratio of 1:1 via carbodiimide. The average coupling yield was 15%. A specific activity of 4 mCi/mg IgG could be obtained with commercially supplied 67 Ga. In vitro stability was evaluated in human serum at 37 0 C and showed a half-life of about 120 h for the release of 67 Ga from the labeled Ab during the initial phase of incubation. This in vitro halflife is similar to that measured for 111 In-DTPA labeled Abs. Because of the high stability of the 67 Ga-P-EDDHA chelate, the in vivo formation of radioactive lebeled transferrin by transchelation, as described for 111 In-DTPA labeled Abs, should, however, be reduced by this labeling technique. (orig.)

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

Energy Technology Data Exchange (ETDEWEB)

Kyle, Erin C. H., E-mail: erinkyle@engineering.ucsb.edu; Kaun, Stephen W.; Young, Erin C.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2015-06-01

We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5–6 × 10{sup 19} cm{sup −3} as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 10{sup 18} cm{sup −3}. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

Charge density wave behavior and order-disorder in the antiferromagnetic metallic series Eu (Ga1 -xAlx)4

Science.gov (United States)

Stavinoha, Macy; Cooley, Joya A.; Minasian, Stefan G.; McQueen, Tyrel M.; Kauzlarich, Susan M.; Huang, C.-L.; Morosan, E.

2018-05-01

The solid solution Eu (Ga1-xAlx) 4 was grown in single crystal form to reveal a rich variety of crystallographic, magnetic, and electronic properties that differ from the isostructural end compounds EuGa4 and EuAl4, despite the similar covalent radii and electronic configurations of Ga and Al. Here we report the onset of magnetic spin reorientation and metamagnetic transitions for x =0 -1 evidenced by magnetization and temperature-dependent specific heat measurements. TN changes nonmonotonously with x , and it reaches a maximum around 20 K for x =0.50 , where the a lattice parameter also shows an extreme (minimum) value. Anomalies in the temperature-dependent resistivity consistent with charge density wave behavior exist only for x =0.50 and 1. Density functional theory calculations show increased polarization between the Ga-Al covalent bonds in the x =0.50 structure compared to the end compounds, such that crystallographic order and chemical pressure are proposed as the causes of the charge density wave behavior.

Demonstration of solar-blind Al{sub x}Ga{sub 1−x}N-based heterojunction phototransistors

Energy Technology Data Exchange (ETDEWEB)

Zhang, Lingxia; Tang, Shaoji; Liu, Changshan; Li, Bin; Wu, Hualong; Wang, Hailong [School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Wu, Zhisheng [State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275 (China); Jiang, Hao, E-mail: stsjiang@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275 (China); School of Microelectronics, Sun Yat-sen University, Guangzhou 510275 (China)

2015-12-07

Al{sub 0.4}Ga{sub 0.6}N/Al{sub 0.65}Ga{sub 0.35}N heterojunction phototransistors have been fabricated from the epi-structure grown by low-pressure metal organic chemical vapor deposition on c-plane sapphire substrates. P-type conductivity of the AlGaN base layer was realized by using indium surfactant-assisted Mg-delta doping method. Regrowth technique was used to suppress the Mg memory effect on the n-type emitter. The fabricated devices with a 150-μm-diameter active area exhibited a bandpass spectral response between 235 and 285 nm. Dark current was measured to be less than 10 pA for bias voltages below 2.0 V. A high optical gain of 1.9 × 10{sup 3} was obtained at 6 V bias.

Detection of high PD-L1 expression in oral cancers by a novel monoclonal antibody L1Mab-4.

Science.gov (United States)

Yamada, Shinji; Itai, Shunsuke; Kaneko, Mika K; Kato, Yukinari

2018-03-01

Programmed cell death-ligand 1 (PD-L1), which is a ligand of programmed cell death-1 (PD-1), is a type I transmembrane glycoprotein that is expressed on antigen-presenting cells and several tumor cells, including melanoma and lung cancer cells. There is a strong correlation between human PD-L1 (hPD-L1) expression on tumor cells and negative prognosis in cancer patients. In this study, we produced a novel anti-hPD-L1 monoclonal antibody (mAb), L 1 Mab-4 (IgG 2b , kappa), using cell-based immunization and screening (CBIS) method and investigated hPD-L1 expression in oral cancers. L 1 Mab-4 reacted with oral cancer cell lines (Ca9-22, HO-1-u-1, SAS, HSC-2, HSC-3, and HSC-4) in flow cytometry and stained oral cancers in a membrane-staining pattern. L 1 Mab-4 stained 106/150 (70.7%) of oral squamous cell carcinomas, indicating the very high sensitivity of L 1 Mab-4. These results indicate that L 1 Mab-4 could be useful for investigating the function of hPD-L1 in oral cancers.

Epitaxial Growth of MgxCa1-xO on GaN by Atomic Layer Deposition.

Science.gov (United States)

Lou, Xiabing; Zhou, Hong; Kim, Sang Bok; Alghamdi, Sami; Gong, Xian; Feng, Jun; Wang, Xinwei; Ye, Peide D; Gordon, Roy G

2016-12-14

We demonstrate for the first time that a single-crystalline epitaxial Mg x Ca 1-x O film can be deposited on gallium nitride (GaN) by atomic layer deposition (ALD). By adjusting the ratio between the amounts of Mg and Ca in the film, a lattice matched Mg x Ca 1-x O/GaN(0001) interface can be achieved with low interfacial defect density. High-resolution X-ray diffraction (XRD) shows that the lattice parameter of this ternary oxide nearly obeys Vegard's law. An atomically sharp interface from cross-sectional transmission electron microscopy (TEM) confirmed the high quality of the epitaxy. High-temperature capacitance-voltage characterization showed that the film with composition Mg 0.25 Ca 0.75 O has the lowest interfacial defect density. With this optimal oxide composition, a Mg 0.25 Ca 0.75 O/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility (MOS-HEMT) device was fabricated. An ultrahigh on/off ratio of 10 12 and a near ideal SS of 62 mV/dec were achieved with this device.

Synthesis and morphological modification of semiconducting Mg(Zn)Al(Ga)–LDH/ITO thin films

Energy Technology Data Exchange (ETDEWEB)

Valente, Jaime S., E-mail: jsanchez@imp.mx [Instituto Mexicano del Petróleo, Eje Central # 152, 07730 México D.F. (Mexico); López-Salinas, Esteban [Instituto Mexicano del Petróleo, Eje Central # 152, 07730 México D.F. (Mexico); Prince, Julia [Universidad Anáhuac México Norte, Av. Universidad Anáhuac # 46, Huixquilucan, Edo. de México 52786 (Mexico); González, Ignacio; Acevedo-Peña, Prospero [Universidad Autónoma Metropolitana-Iztapalapa, Departamento de Química, Apdo. Postal 55-534, 09340 México D.F. (Mexico); Ángel, Paz del [Instituto Mexicano del Petróleo, Eje Central # 152, 07730 México D.F. (Mexico)

2014-09-15

Layered double hydroxide (LDH) thin films with different chemical compositions (MgZnAl, MgZnGa, MgGaAl) and varying thicknesses were easily prepared by sol–gel method followed by dip-coating. Films were chemically uniform, transparent and well adhered to a conductive indium tin oxide (ITO) substrate. Structure, chemical composition and morphology of the thin films were characterized by XRD-GADDS, SEM-EDS and AFM. Additionally, the semiconducting properties of all the prepared films were studied through the Mott–Schottky relationship; such properties were closely related to the chemical compositions of the film. The films were characterized after electrochemical treatment and important modifications regarding surface morphology, particle and crystal sizes were observed. An in-depth study was conducted in order to investigate the effect of several different electrochemical treatments on the morphology, particle size distribution and crystal size of LDH thin films. Upon electrochemical treatment, the films' surface became smooth and the particles forming the films were transformed from flaky open LDH platelets to uniformly distributed close-packed LDH nanoparticles. - Highlights: • Semiconducting Mg(Zn)Al(Ga)–LDH/ITO thin films prepared by sol–gel. • LDH thin films show a turbostratic morphology made up of porous flakes. • Electrochemical treatments change the flaky structure into a nanoparticle array.

Avalanche solar blind photodetectors based on single crystalline Mg0.47Zn0.53O thin film on Ga:ZnO substrate

Science.gov (United States)

Chen, Hao; Zhang, Jingtao; Chen, Zuxin; Liu, Huiqiang; Ma, Xinzhou; Li, Qiuguo; Chu, Guang; Chu, Sheng

2018-05-01

Single crystalline wurtzite Mg0.47Zn0.53O films were grown on Ga:ZnO substrates by pulse laser deposition. The band gap of the films was measured to be 4.43 eV. Vertical devices were fabricated for solar blind photodetection, realizing a high responsivity of 2 A W‑1 at 278 nm and  ‑5 V bias as well as a rejection ratio (R 278 nm/R 350 nm) of over 6  ×  103. A cut-off wavelength of 286 nm and a response time of 77 ms were also achieved. Besides, the devices showed stable response without degeneration under repeating illumination. The high performance of this photodetector was analyzed and attributed to the avalanche effect from high quality Mg0.47Zn0.53O/Ga:ZnO heterojunction at reverse bias. The avalanche gain was calculated to be 14.5 at  ‑10 V.

High-capacity, high-strength trailer designs for the GA-4/GA-9 Casks

International Nuclear Information System (INIS)

Kissinger, J.A.; Rickard, N.D.; Taylor, C.; Zimmer, A.

1991-01-01

General Atomics (GA) is developing final designs for two dedicated legal-weight trailers to transport the GA-4 and GA-9 Spent-Fuel Casks. The basic designs for these high-capacity, high-strength trailers are essentially identical except for small modifications to account for the differences in cask geometry. We are designing both trailers to carry a 55,000 lb (24,900 kg) payload and to withstand a 2.5 g vertical design load. The GA-4 and GA-9 trailers are designed for significantly higher loads than are typical commercial semitrailers, which are designed to loads in the range of 1.7 to 2.0 g. To meet the federal gross vehicle weight limit for legal-weight trucks, GA has set a target design weight for the trailers of 9000 lb (4080 kg). This weight includes the personnel barrier, cask tiedowns, and impact limiter removal and storage system. Based on the preliminary trailer designs, the final design weight is expected to be very close to this target weight. 3 refs., 3 figs

High-capacity, high-strength trailer designs for the GA-4/GA-9 casks

International Nuclear Information System (INIS)

Rickard, N.D.; Kissinger, J.A.; Taylor, C.; Zimmer, A.

1991-01-01

General Atomics (GA) is developing final designs for two dedicated legal-weight trailers to transport the GA-4 and GA-9 Spent-Fuel Casks. The basic designs for these high-capacity, high-strength trailers are essentially identical except for small modifications to account for the differences in cask geometry. The authors are designing both trailers to carry a 55,000 lb (24,900 kg) payload and to withstand a 2.5 g vertical design load. The GA-4 and GA-9 trailers are designed for significantly higher loads than are typical commercial semitrailers, which are designed to loads in the range of 1.7 to 2.0 g. To meet the federal gross vehicle weight limit for legal-weight trucks, GA has set a target design weight for the trailers of 9000 lb (4080 kg). This weight includes the personnel barrier, cask tiedowns, and impact limiter removal and storage system. Based on the preliminary trailer designs, the final design weight will to be very close to this target weight

Thermodynamic properties of CuCr2S4 solid solutions in Cusub(1/2)Msub(1/2)Crsub(2)Ssub(4) (M - Ga, In)

International Nuclear Information System (INIS)

Titov, V.V.; Kesler, Ya.A.; Shelkotunov, V.A.; Gordeev, I.V.; Tret'yakov, Yu.D.

1985-01-01

By means of an adiabatic calorimeter and quartz dilatometer for CuCr 2 S 4 in Cusub(1/2)Msub(1/2)Crsub(2)Ssub(4) (M-Ga, In) temperature dependences of heat capacity are determined. The contribution of various components into heat capacity is estimated, thermodynamic parameters of magnetic transformation are calculated

Detection of high PD-L1 expression in oral cancers by a novel monoclonal antibody L1Mab-4

Directory of Open Access Journals (Sweden)

Shinji Yamada

2018-03-01

Full Text Available Programmed cell death-ligand 1 (PD-L1, which is a ligand of programmed cell death-1 (PD-1, is a type I transmembrane glycoprotein that is expressed on antigen-presenting cells and several tumor cells, including melanoma and lung cancer cells. There is a strong correlation between human PD-L1 (hPD-L1 expression on tumor cells and negative prognosis in cancer patients. In this study, we produced a novel anti-hPD-L1 monoclonal antibody (mAb, L1Mab-4 (IgG2b, kappa, using cell-based immunization and screening (CBIS method and investigated hPD-L1 expression in oral cancers. L1Mab-4 reacted with oral cancer cell lines (Ca9-22, HO-1-u-1, SAS, HSC-2, HSC-3, and HSC-4 in flow cytometry and stained oral cancers in a membrane-staining pattern. L1Mab-4 stained 106/150 (70.7% of oral squamous cell carcinomas, indicating the very high sensitivity of L1Mab-4. These results indicate that L1Mab-4 could be useful for investigating the function of hPD-L1 in oral cancers. Keywords: Programmed cell death-ligand 1, Monoclonal antibody, Oral cancer

Radiolabeling of NOTA and DOTA with Positron Emitting {sup 68}Ga and Investigation of In Vitro Properties

Energy Technology Data Exchange (ETDEWEB)

Jeong, Jae Min; Kim, Young Ju; Lee, Yun Sang; Lee, Dong Soo; Chung, June Key; Lee, Myung Chul [Seoul National University College of Medicine, Seoul (Korea, Republic of)

2009-08-15

We established radiolabeling conditions of NOTA and DOTA with a generator-produced PET radionuclide {sup 68}Ga and studied in vitro characteristics such as stability, serum protein binding, octanol/water distribution, and interference with other metal ions. Various concentrations of NOTA{center_dot}3HCl and DOTA{center_dot}4HCl were labeled with 1 mL {sup 68}GaCl{sub 3} (0.18{approx}5.75 mCi in 0.1 M HCl) in various pH. NOTA{center_dot}3HCl (0.373 mM) was labeled with {sup 68}GaCl{sub 3} (0.183{approx}0.232 mCi/0.1 M HCl 1.0 mL) in the presence of CuCl{sub 2}, FeCl{sub 2}, InCl{sub 3}, FeCl{sub 3}, GaCl{sub 3}, MgCl{sub 2} or CaCl{sub 2} (0{approx}6.07 mM) at room temperature. The labeling efficiencies of {sup 68}Ga-NOTA and {sup 68}Ga-DOTA were checked by ITLC-SG using acetone or saline as mobile phase. Stabilities, protein bindings, and octanol distribution coefficients of the labeled compounds also were investigated. {sup 68}Ga-NOTA and {sup 68}Ga-DOTA were labeled optimally at pH 6.5 and pH 3.5, respectively, and the chelates were stable for 4 hr either in the reaction mixture at room temperature or in the human serum at 37 .deg. C. NOTA was labeled at room temperature while DOTA required heating for labeling. {sup 68}Ga-NOTA labeling efficiency was reduced by CuCl{sub 2}, FeCl{sub 2}, InCl{sub 2}, FeCl{sub 3} or GaCl{sub 3}, however, was not influenced by MgCl{sub 2} or CaCl{sub 2}. The protein binding was low (2.04{approx}3.32%). Log P value of {sup 68}Ga-NOTA was -3.07 indicating high hydrophilicity. We found that NOTA is a better bifunctional chelating agent than DOTA for {sup 68}Ga labeling. Although, {sup 68}Ga-NOTA labeling is interfered by various metal ions, it shows high stability and low serum protein binding.

A high-temperature Raman scattering study of the phase transitions in GaPO{sub 4} and in the AlPO{sub 4}-GaPO{sub 4} system

Energy Technology Data Exchange (ETDEWEB)

Angot, E [Laboratoire des Colloides, des Verres et des Nanomateriaux, UMR CNRS 5587, Universite Montpellier II, cc026, Place E Bataillon, F-34095 Montpellier Cedex 5 (France); Parc, R Le [Laboratoire des Colloides, des Verres et des Nanomateriaux, UMR CNRS 5587, Universite Montpellier II, cc026, Place E Bataillon, F-34095 Montpellier Cedex 5 (France); Levelut, C [Laboratoire des Colloides, des Verres et des Nanomateriaux, UMR CNRS 5587, Universite Montpellier II, cc026, Place E Bataillon, F-34095 Montpellier Cedex 5 (France); Beaurain, M [Laboratoire de Physicochimie de la Matiere Condensee, UMR CNRS 5617, Universite Montpellier II, cc003, Place E Bataillon, F-34095 Montpellier Cedex 5 (France); Armand, P [Laboratoire de Physicochimie de la Matiere Condensee, UMR CNRS 5617, Universite Montpellier II, cc003, Place E Bataillon, F-34095 Montpellier Cedex 5 (France); Cambon, O [Laboratoire de Physicochimie de la Matiere Condensee, UMR CNRS 5617, Universite Montpellier II, cc003, Place E Bataillon, F-34095 Montpellier Cedex 5 (France); Haines, J [Laboratoire de Physicochimie de la Matiere Condensee, UMR CNRS 5617, Universite Montpellier II, cc003, Place E Bataillon, F-34095 Montpellier Cedex 5 (France)

2006-05-03

Al{sub 1-x}Ga{sub x}PO{sub 4} solid solutions (x = 0.2, 0.3, 0.38, 0.7) and the pure AlPO{sub 4} (x = 0) and GaPO{sub 4} (x = 1) end members with the {alpha}-quartz-type structure were studied by Raman scattering. An investigation as a function of composition enabled the various modes to be assigned, in particular coupled and decoupled vibrations. The tetrahedral tilting modes, which have been linked to high-temperature phase transitions to {beta}-quartz-type forms, were found to be decoupled. In addition, it is shown that Raman spectroscopy is a powerful technique for determining the gallium content of these solid solutions. Single crystals with x = 0.2, 0.38, and 1.0 (GaPO{sub 4}) were investigated at high temperature. The composition Al{sub 0.8}Ga{sub 0.2}PO{sub 4} was found to exhibit sequential transitions upon heating to the {beta}-quartz and {beta}-cristobalite forms at close to 993 K and 1073 K, respectively. Direct {alpha}-quartz-{beta}-cristobalite transitions were observed for the two other compositions at close to 1083 K and 1253 K, respectively, upon heating. The spectra of the {beta}-quartz and {beta}-cristobalite forms indicate the presence of significant disorder. Back transformation to the {alpha}-quartz-type form occurred readily with a hysteresis of less than 100 K for the composition x = 0.38 and for pure GaPO{sub 4}. Rapid cooling was necessary to obtain the metastable {alpha}-cristobalite form. In contrast, for Al{sub 0.80}Ga{sub 0.20}PO{sub 4}, the {alpha}-cristobalite form was obtained even upon slow cooling.

Physiochemical and Phytochemical Properties of Wax Apple (Syzygium samarangense [Blume] Merrill & L. M. Perry var. Jambu Madu as Affected by Growth Regulator Application

Directory of Open Access Journals (Sweden)

Mohammad Moneruzzaman Khandaker

2012-01-01

Full Text Available This study represents the first paper of the effects of growth regulators on the physiochemical and phytochemical properties of the wax apple fruit, a widely cultivated fruit tree in southeast Asia. Net photosynthesis, sucrose phosphate synthase (SPS activity, peel color, fruit firmness, juice content, pH value, total soluble solids (TSSs, and the sugar acid ratio were all significantly increased in growth regulators (PGRs treated fruits. The application of gibberellin (GA3, naphthalene acetic acid (NAA, and 2,4-dichlorophenoxy acetic acid (2,4-D significantly reduced titratable acidity and increased total sugar and carbohydrate content compared to the control. The 50 mg/L GA3, 10 mg/L NAA, and 5 mg/L 2,4-D treatments produced the greatest increases in phenol and flavonoid content; vitamin C content was also higher for these treatments. PGR treatment significantly affected chlorophyll, anthocyanin, and carotene content and produced higher phenylalanine ammonia lyase (PAL and antioxidant activity levels. There was a positive correlation between peel color and TSS and antioxidant activity and both phenol and flavonoid content and PAL activity and anthocyanin formation. A taste panel assessment was also performed, and the highest scores were given to fruits that had been treated with GA3 or auxin. The study showed that application of 50 mg/L GA3, 10 mg/L NAA, and 5 mg/L 2,4-D once a week from bud development to fruit maturation increased the physiochemical and phytochemical properties of wax apple fruits.

The (CuGaSe{sub 2}){sub 1-x}(MgSe){sub x} alloy system (0{<=}x{<=}0.5): X-ray diffraction, energy dispersive spectrometry and differential thermal analysis

Energy Technology Data Exchange (ETDEWEB)

Grima Gallardo, P.; Munoz, M.; Ruiz, J. [Centro de Estudios en Semiconductores (C.E.S.), Dpto. Fisica, Fac. Ciencias, La Hechicera, Merida (Venezuela); Delgado, G.E. [Laboratorio de Cristalografia, Dpto. Quimica, Fac. Ciencias, Universidad de Los Andes, Merida 5101 (Venezuela); Briceno, J.M. [Laboratorio de Analisis Quimico y Estructural (LAQUEM), Dpto. Fisica, Fac. Ciencias, La Hechicera, Merida (Venezuela)

2004-07-01

The (CuGaSe{sub 2}){sub 1-x}(MgSe){sub x} alloy system (0MgSe in CuGaSe{sub 2} was found to be nearly complete for all the compositions studied, although traces of MgSe appear as a secondary phase at x{>=}0.15. All the alloys showed the chalcopyrite structure and the lattice parameters of the unit cell do not follow a linear behavior but showed a soft local maximum at x {proportional_to} 0.15. In the single-phase field, the increasing behavior of the lattice parameters can be reproduced using an extension for quaternary alloys of Jaffe and Zunger's model for chalcopyrites. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Peripheral phosphodiesterase 4 inhibition produced by 4-[2-(3,4-Bis-difluoromethoxyphenyl)-2-[4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropan-2-yl)-phenyl]-ethyl]-3-methylpyridine-1-oxide (L-826,141) prevents experimental autoimmune encephalomyelitis

DEFF Research Database (Denmark)

Moore, Craig S.; Earl, Nathalie; Frenette, Richard

2006-01-01

Administration of phosphodiesterase 4 (PDE4) inhibitors suppresses the pathogenesis associated with experimental autoimmune encephalomyelitis (EAE), an animal model of multiple sclerosis (MS). In the present study, we compared the effects of rolipram and 4-[2-(3,4-bis-difluoromethoxyphenyl)-2...... observed. Only L-826,141 at a dose of 30 mg/kg p.o. significantly decreased the clinical severity of EAE compared with vehicle controls. Immunohistochemical detection of the neuronal activity marker Fos confirmed that L-826,141 did not reach concentrations in the central nervous system sufficient...

The ternary system K2SO4MgSO4CaSO4

Science.gov (United States)

Rowe, J.J.; Morey, G.W.; Silber, C.C.

1967-01-01

Melting and subsolidus relations in the system K2SO4MgSO4CaSO4 were studied using heating-cooling curves, differential thermal analysis, optics, X-ray diffraction at room and high temperatures and by quenching techniques. Previous investigators were unable to study the binary MgSO4CaSO4 system and the adjacent area in the ternary system because of the decomposition of MgSO4 and CaSO4 at high temperatures. This problem was partly overcome by a novel sealed-tube quenching method, by hydrothermal synthesis, and by long-time heating in the solidus. As a result of this study, we found: (1) a new compound, CaSO4??3MgSO4 (m.p. 1201??C) with a field extending into the ternary system; (2) a high temperature form of MgSO4 with a sluggishly reversible inversion. An X-ray diffraction pattern for this polymorphic form is given; (3) the inversion of ??-CaSO4 (anhydrite) to ??-CaSO4 at 1195??C, in agreement with grahmann; (1) (4) the melting point of MgSO4 is 1136??C and that of CaSO4 is 1462??C (using sealed tube methods to prevent decomposition of the sulphates); (5) calcium langbeinite (K2SO4??2CaSO4) is the only compound in the K2SO4CaSO4 binary system. This resolved discrepancies in the results of previous investigators; (6) a continuous solid solution series between congruently melting K2SOP4??2MgSO4 (langbeinite) and incongruently melting K2SO4??2CaSO4 (calcium langbeinite); (7) the liquidus in the ternary system consists of primary phase fields of K2SO4, MgSO4, CaSO4, langbeinite-calcium langbeinite solid solution, and CaSO4??3MgSO4. The CaSO4 field extends over a large portion of the system. Previously reported fields for the compounds (K2SO4??MgSO4??nCaSO4), K2SO4??3CaSO4 and K2SO4??CaSO4 were not found; (8) a minimum in the ternary system at: 740??C, 25% MgSO4, 6% CaSO4, 69% K2SO4; and ternary eutectics at 882??C, 49% MgSO4, 19% CaSO4, 32% K2SO4; and 880??, 67??5% MgSO4, 5% CaSO4, 27??5% K2SO4. ?? 1967.

Endogenous gibberellins in Arabidopsis thaliana and possible steps blocked in the biosynthetic pathways of the semidwarf ga4 and ga5 mutants

International Nuclear Information System (INIS)

Talon, M.; Zeevaart, J.A.D.; Koornneef, M.

1990-01-01

Twenty gibberellins (GAs) have been identified in extracts from shoots of the Landsberg erecta line of Arabidopsis thaliana by full-scan gas chromatography-mass spectrometry and Kovats retention indices. Eight of them are members of the early-13-hydroxylation pathway (GA 53 , GA 44 , GA 19 , GA 17 , GA 20 , GA 1 , GA 29 , and GA 8 ), six are members of the early-3-hydroxylation pathway (GA 37 , GA 27 , GA 36 , GA 13 , GA 4 , and GA 34 ), and the remaining six are members of the non-3,13-hydroxylation pathway (GA 12 , GA 15 , GA 24 , GA 25 , GA 9 , and GFA 51 ). Seven of these GAs were quantified in the Landsberg erecta line of Arabidopsis and in the semidwarf ga4 and ga5 mutants by gas chromatography-selected ion monitoring (SIM) using internal standards. The relative levels of the remaining 13 GAs were compared by the use of ion intensities only. The growth-response data, as well as the accumulation of GA 9 in the ga4 mutant, indicate that GA 9 is not active in Arabidopsis, but it must be 3β-hydroxytlated to GA 4 to become bioactive. It is concluded that the reduced levels of the 3β-hydroxy-GAs, GA 1 and GA 4 , are the cause of the semidwarf growth habit of both mutants

Thermoluminescence kinetic analysis and dosimetry features of MgSO4:Dy and MgSO4:Cu nano-rods

International Nuclear Information System (INIS)

Zahedifar, M.; Almasifard, F.; Sadeghi, E.; Biroon, M. Kashefi; Ramazani- Moghaddam-Arani, A.

2016-01-01

MgSO 4 :Dy and MgSO 4 :Cu nano-rods (NRs) were synthesized for the first time by semi co- precipitation method. X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectrometry (EDS) were utilized for sample characterization. The optimum amount of dysprosium and copper concentrations were obtained both at 0.1 mol% in MgSO 4 :Dy and MgSO 4 :Cu NRs. T m -T stop and computerized glow curve deconvolution (CGCD) methods were used for identifying the number of component glow peaks and kinetic parameters of the synthesized NRs. Initial rise and variable heating rate methods were also used to ensure the reliability of obtained kinetic parameters. Results show that the TL sensitivity of MgSO 4 :Dy is about 7 times more than that of magnesium sulfate doped with Cu. The TL dose response of MgSO 4 :Dy and MgSO 4 :Cu NRs are linear up to absorbed dose of 10 KGy. Other TL dosimetry characteristics of the produced NRs are also presented and discussed. - Highlights: • MgSO4:Dy and MgSO4:Cu nano-rods were synthesized for the first time. • Thermoluminescence dosimetry properties were studied. • The nano-phosphors showed linear dose response up to very high dose levels. • The synthesized nano-rods have potential application for high dose dosimetry.

Durability testing of the high-capacity GA-4/GA-9 trailer

International Nuclear Information System (INIS)

Zimmer, A.; Lyon, T.

1995-01-01

GA designed trailers to transport the GA-4 and GA-9 LWT from-reactor spent nuclear fuel shipping casks. GA designed and fabricated the GA-9 trailer to ANSI N14.30 requirements and is now performing a durability test at the AlliedSignal Automotive Proving Grounds. The trailer, simulated cask and tractor. The test program objective is to evaluate and improve, as necessary, the trailer's durability, reliability and performance

Valence band photoemission from in-situ grown GaAs(100)-c(4 x 4)

Czech Academy of Sciences Publication Activity Database

Jiříček, Petr; Cukr, Miroslav; Bartoš, Igor; Adell, M.; Strasser, T.; Schattke, W.

2006-01-01

Roč. 56, č. 1 (2006), s. 21-26 ISSN 0011-4626. [Symposium on Surface Physics /10./. Praha, 11.07.2005-15.07.2005] R&D Projects: GA ČR(CZ) GA202/04/0994 Institutional research plan: CEZ:AV0Z10100521 Keywords : GaAs(100)-c(4X4) * surface states * band structure * structure plot Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.568, year: 2006

An attempt to conserve whatnot somniferum (L.) dual - a highly essential medicinal plant, through in vitro callus culture

International Nuclear Information System (INIS)

Rout, J.R.; Sahoo, S.

2011-01-01

A simple effective protocol was developed for conservation and plant propagation through callus cultures of Withania somnifera (Ashwagandha). Seed germination percentage reached a maximum value of 64.3% on half MS + GA3 0.25 mg/l at third week of culture. Three different basal media compared for seed germination, MS was most effective. Out of 25 combinations of growth regulators evaluated, MS + 1.0 mg/l BA + 1.0 mg/l 2, 4-D found to be best for callus induction and proliferation regardless to explants. Among the four different explants tested, In vivo leaf explant was found most suitable for callus induction, proliferation and fresh weight gain. The highest callus induction frequency percentage 86.4% was recorded with In vivo leaf explant whereas, 43.4% in In vitro leaf explant at day 30 on MS augmented with 1.0 mg/l BA + 1.0 mg/l 2,4-D. Among different growth regulator combinations tested in augmentation with MS for shoot initiation and elongation, 2.0 mg/l BA + 1.0 mg/l NAA was the best eliciting a maximum of 82.3% shoot induction with highest shoot number 4.8 shoots/callus. The original callus was sub-cultured 2 times on fresh shoot multiplication medium after each harvest of the shoots. Of three different auxins tested for In vitro rooting, IBA was most effective compared to IPA and NAA. Half-strength MS medium containing IBA at an optimum concentration of 2.0 mg/l induced rooting in 83.1% of the In vitro derived shoots. The rooted plantlets were acclimated and eventually established in soil. (author)

High surface stability of magnetite on bi-layer Fe3O4/Fe/MgO(0 0 1) films under 1 MeV Kr+ ion irradiation

Czech Academy of Sciences Publication Activity Database

Kim-Ngan, N.-T.H.; Krupska, M.; Balogh, A.G.; Malinský, Petr; Macková, Anna

2017-01-01

Roč. 8, č. 4 (2017), č. článku 045005. E-ISSN 2043-6262 R&D Projects: GA MŠk LM2015056 Institutional support: RVO:61389005 Keywords : nanoscience * thin film * surface and interface Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders OBOR OECD: Nuclear physics

Optical characteristics of BaGa2S4:Ho3+ and BaGa2Se4:Ho3+ single crystals

International Nuclear Information System (INIS)

Choe, Sung-Hyu; Jin, Moon-Seog; Kim, Wha-Tek

2005-01-01

BaGa 2 S 4 , BaGa 2 S 4 :Ho 3+ , BaGa 2 Se 4 , and BaGa 2 Se 4 :Ho 3+ single crystals were grown by using the chemical transport reaction method. The optical energy gaps of the single crystals were investigated in the temperature region from 11 K to 300 K. The temperature dependence of the optical energy gap was well fitted by the Varshni equation. Two broad emission bands were observed in the photoluminescence spectra of the single crystals. These bands were attributed to donor-acceptor pair recombinations. Sharp emission peaks were observed in the BaGa 2 S 4 :Ho 3+ and the BaGa 2 Se 4 :Ho 3+ single crystals and were assigned to radiation recombination between split Stark levels of Ho 3+ .

OVERCOMING SEED DORMANCY IN Annona macroprophyllata AND Annona purpureaUSING PLANT GROWTH REGULATORS

Directory of Open Access Journals (Sweden)

GISELA FERREIRA

Full Text Available ABSTRACT Some Annonaceae seeds are known to exhibit dormancy mechanisms ranging from possible seed coat impermeability to physiological dormancy. Thus, the aim of this study was to evaluate the effects of gibberellin (GA GA3 and GA4+7 + benzyladenine (GA4+7 + BA application in seeds of Annona macroprophyllata Donn. Sm (papausa and Annona purpurea Moc. & Sessé ex Dunal (chincuya. The experiment was performed by the application of GA3 and GA4+7 + BA on seeds in concentrations of 0, 200, 400, 500, 600, 800 and 1000 mg L-1. The regulators broke the dormancy of both species. However, application of the GA4+7 + BA mixture had more significant results, with greater increases in germination in A. macroprophyllata than in A. purpurea. Treatments that promoted the highest germinations were GA4+7 + BA at a concentration of 200 mg L-1 for A. macroprophyllata (77% and 200 mg L-1 of GA4+7 + BA and 500 mg L-1 of GA3 for A. purpurea (30% and 29%, respectively. Rate index, mean time and frequency of germination were distinct for both species and both treatments. Although both GA3 and GA4+7 + BA promote germination, the GA4+7 + BA mixture was more effective than GA3 to overcoming seed dormancy of both species, A. purpurea has a harder dormancy than A. macroprophyllata

Biochemical and physiological responses of lycoris sprengeri bulblets (amaryllidaceae) to exogenously applied N-(2-Chloro-4-Pyridyl)-N1-Phenylurea (CPPU)

International Nuclear Information System (INIS)

Ren, Z.; Xia, Y.; Xiao, Y.; Zhang, D.; Lv, X.

2017-01-01

Bulblets of Lycoris sprengeri (Amaryllidaceae) were obtained by cutting. Six concentrations of N-(2-chloro-4-pyridyl)-N1-phenylurea (CPPU) solutions were sprayed on leaves from one-year-old bulblets during their green period. Fresh weight, diameter,carbohydrate content, activity of starch metabolism-related enzymes and levels of endogenous hormones of bulblets were determined. The effects of CPPU treatment on bulblet development and biochemical and physiological indices of L. sprengeri were analyzed using the determined values. The results showed that CPPU treatment at an appropriate concentration promoted the enlargement of L. sprengeri bulblets; the optimal concentration was 7.5 mg L-1. Bulblet growth showed a significant positive correlation with starch content and the activities of soluble starch synthase (SSS) and starch-bound starch synthase (GBSS). Bulblet growth showed anextremely significant positive correlation with the ratio of endogenous gibberellic acid/abscisic acid (GA/ABA). The GA/ABA ratio showed a significant positive correlation with the activities of (a+beta)-amylase and GBSS. The exogenous application of CPPU promoted the synthesis and accumulation of starch in the bulblets of L. sprengeri and the activities of starch metabolism-related enzymes; an increase in the endogenous GA/ABA ratio had a synergistic effect. (author)

High-Energy-Density Aqueous Magnesium-Ion Battery Based on a Carbon-Coated FeVO4 Anode and a Mg-OMS-1 Cathode.

Science.gov (United States)

Zhang, Hongyu; Ye, Ke; Zhu, Kai; Cang, Ruibai; Yan, Jun; Cheng, Kui; Wang, Guiling; Cao, Dianxue

2017-12-01

Porous FeVO 4 is prepared by hydrothermal method and further modified by coating with carbon to obtain FeVO 4 /C with a hierarchical pore structure. FeVO 4 /C is used as an anodic electrode in aqueous rechargeable magnesium-ion batteries. The FeVO 4 /C material not only has improved electrical conductivity as a result of the carbon coating layer, but also has an increased specific surface area as a result of the hierarchical pore structure, which is beneficial for magnesium-ion insertion/deinsertion. Therefore, an aqueous rechargeable magnesium-ion full battery is successfully constructed with FeVO 4 /C as the anode, Mg-OMS-1 (OMS=octahedral molecular sieves) as the cathode, and 1.0 mol L -1 MgSO 4 as the electrolyte. The discharge capacity of the Mg-OMS-1//FeVO 4 /C aqueous battery is 58.9 mAh g -1 at a current density of 100 mA g -1 ; this value is obtained by calculating the total mass of two electrodes and the capacity retention rate of this device is 97.7 % after 100 cycles, with almost 100 % coulombic efficiency, which indicates that the system has a good electrochemical reversibility. Additionally, this system can achieve a high energy density of 70.4 Wh kg -1 , which provides powerful evidence that an aqueous magnesium-ion battery is possible. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Parameters of radiation defects in GaP and GaAssub(1-x)Psub(x) with thermostimulated current measurements

International Nuclear Information System (INIS)

Brajlovskij, E.Yu.; Marchuk, N.D.

1980-01-01

Introduction of point defects in gallium phosphide crystals and GaAssub(1-x)Psub(x) solid solutions under the action of 1 MeV electrons is studied by TSC method on Schottky barriers. The TSC spectra processing using the computer is given. In GaP crystals the dominant electron and hole traps are D-centers (Esub(c)-1.24 eV) and M-centers (Esub(v)+1.43 eV). The received level spectrum explains the compensation of conductivity of n- and p-lGaP under irradiation. It is shown that main defects observed in electron irradiated GaP are most likely phosphorus vacancies (D-center)and gallium vacancies (M-center)

Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD

International Nuclear Information System (INIS)

Wang Yong; Yu Nai-Sen; Li Ming; Lau Kei-May

2011-01-01

AlGaN/GaN high electron mobility transistors (HEMTs) are grown on 2-inch Si (111) substrates by MOCVD. The stacked AlGaN/AlN interlayer with different AlGaN thickness and indium surfactant doped is designed and optimized to relieve the tensile stress during GaN epitaxial growth. The top 1.0μm GaN buffer layer grown on the optimized AlGaN/AlN interlayer shows a crack-free and shining surface. The XRD results show that GaN(002) FWHM is 480 arcsec and GaN(102) FWHM is 900 arcsec. The AGaN/GaN HEMTs with optimized and non-optimized AlGaN/AlN interlayer are grown and processed for comparison and the dc and rf characteristics are characterized. For the dc characteristics of the device with optimized AlGaN/AlN interlayer, maximum drain current density I dss of 737mA/mm, peak transconductance G m of 185mS/mm, drain leakage current density I ds of 1.7μA/mm, gate leakage current density I gs of 24.8 μA/mm and off-state breakdown voltage V BR of 67 V are achieved with L g /W g /L gs /L gd = 1/10/1/1 μm. For the small signal rf characteristics of the device with optimized AlGaN/AlN interlayer, current gain cutoff frequency f T of 8.3 GHz and power gain cutoff frequency f max of 19.9 GHz are achieved with L g /W g /L gs /L gd = 1/100/1/1 μm. Furthermore, the best rf performance with f T of 14.5 GHz and f max of 37.3 GHz is achieved with a reduced gate length of 0.7μm. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Ga-Ga bonding and tunnel framework in the new Zintl phase Ba{sub 3}Ga{sub 4}Sb{sub 5}

Energy Technology Data Exchange (ETDEWEB)

Park, S -M; Kim, S -J; Kanatzidis, M G

2003-11-01

A new Zintl phase Ba{sub 3}Ga{sub 4}Sb{sub 5} was obtained from the reaction of Ba and Sb in excess Ga flux at 1000 deg. C, and its structure was determined with single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group Pnma (No. 62) with a=13.248(3) A, b=4.5085(9) A, c=24.374(5) A and Z=4. Ba{sub 3}Ga{sub 4}Sb{sub 5} has a three-dimensional [Ga{sub 4}Sb{sub 5}]{sup 6-} framework featuring large tunnels running along the b-axis and accommodating the Ba ions. The structure also has small tube-like tunnels of pentagonal and rhombic cross-sections. The structure contains ethane-like dimeric Sb{sub 3}Ga-GaSb{sub 3} units and GaSb{sub 4} tetrahedra that are connected to form 12- and 14-membered tunnels. Band structure calculations confirm that the material is a semiconductor and indicate that the structure is stabilized by strong Ga-Ga covalent bonding interactions.

Validation of an analytical method applicable to study of 1 mg/mL oral Risperidone solution stability

International Nuclear Information System (INIS)

Abreu Alvarez, Maikel; Garcia Penna, Caridad Margarita; Martinez Miranda, Lissette

2010-01-01

A validated analytical method by high-performance liquid chromatography (HPLC) was applicable to study of 1 mg/mL Risperidone oral solution stability. The above method was linear, accurate, specific and exact. A stability study of the 1 mg/mL Risperidone oral solution was developed determining its expiry date. The shelf life study was conducted for 24 months at room temperature; whereas the accelerated stability study was conducted with product under influence of humidity and temperature; analysis was made during 3 months. Formula fulfilled the quality specifications described in Pharmacopeia. The results of stability according to shelf life after 24 months showed that the product maintains the parameters determining its quality during this time and in accelerated studies there was not significant degradation (p> 0.05) in the product. Under mentioned conditions expiry date was of 2 years

Functional Characterization of Cotton GaMYB62L, a Novel R2R3 TF in Transgenic Arabidopsis.

Directory of Open Access Journals (Sweden)

Hamama Islam Butt

Full Text Available Drought stress can trigger the production of ABA in plants, in response to adverse conditions, which induces the transcript of stress-related marker genes. The R2R3 MYB TFs are implicated in regulation of various plants developmental, metabolic and multiple environmental stress responses. Here, a R2R3-MYB cloned gene, GaMYB62L, was transformed in Arabidopsis and was functionally characterized. The GaMYB62L protein contains two SANT domains with a conserved R2R3 imperfect repeats. The GaMYB62L cDNA is 1,017 bp with a CDS of 879, encodes a 292-residue polypeptide with MW of 38.78 kD and a pI value of 8.91. Overexpressed GaMYB62L transgenic Arabidopsis have increased proline and chlorophyll content, superior seed germination rate under salt and osmotic stress, less water loss rate with reduced stomatal apertures, high drought avoidance as compared to WT on water deprivation and also significant plant survival rates at low temperature. In addition, overexpressed GaMYB62L lines were more sensitive to ABA mediated germination and root elongation assay. Moreover, ABA induced GaMYB62L overexpression, enhanced the expression of ABA stress related marker genes like RD22, COR15A, ADH1, and RD29A. Together, overexpression of GaMYB62L suggested having developed better drought, salt and cold tolerance in transgenic Arabidopsis and thus presented it as a prospective candidate gene to achieve better abiotic stress tolerance in cotton crop.

P-n junction diodes with polarization induced p-type graded InxGa1-xN layer

Science.gov (United States)

Enatsu, Yuuki; Gupta, Chirag; Keller, Stacia; Nakamura, Shuji; Mishra, Umesh K.

2017-10-01

In this study, p-n junction diodes with polarization induced p-type layer are demonstrated on Ga polar (0001) bulk GaN substrates. A quasi-p-type region is obtained by linearly grading the indium composition in un-doped InxGa1-xN layers from 0% to 5%, taking advantage of the piezoelectric and spontaneous polarization fields which exist in group III-nitride heterostructures grown in the typical (0001) or c-direction. The un-doped graded InxGa1-xN layers needed to be capped with a thin Mg-doped InxGa1-xN layer to make good ohmic contacts and to reduce the on-resistance of the p-n diodes. The Pol-p-n junction diodes exhibited similar characteristics compared to reference samples with traditional p-GaN:Mg layers. A rise in breakdown voltage from 30 to 110 V was observed when the thickness of the graded InGaN layer was increased from 100 to 600 nm at the same grade composition.

Improvement of Caper (Capparis spinosa L) propagation using in vitro culture and gamma irradiation

International Nuclear Information System (INIS)

Al-Safadi, B.; Elias, R.

2010-01-01

2.2 cm. This was accompanied with an increase in shoot rooting percentage from 75 to 100% and with an increase in number of roots per plant. The effects of MS and Rugini media on the growth of caper cuttings collected from the field were studied. The results indicated that the MS medium was better than the Rugini medium with an average length of shoots being, 3.2 cm as compared to 2.4 cm when Rugini medium was used. The influence of different growth regulators on adventitious shoot formation was also studied. It appeared that the use of 2 mg/L ZR and 1 mg/L NAA resulted in 5.5 shoots as compared to 2.2 shoots when only GA3 (2 mg/L) was added to the culture medium. The influence of some plant growth regulators on the formation of callus was also studied using cross section of unripe and variable size fruits. The best media for callus induction were MS9 (BA 1 mg/L, NAA 0.1 mg/L) and MS10 (Kin 0.5 mg/L, 2,4, D 2 mg/L) with more callus being produced on peeled fruits than on unpeeled ones. We studied also the influence of plant growth regulators on the formation of callus studied using leaves and stem parts. The best 2 media for this purpose were MS9 (BA 1 mg/L, NAA 0.1 mg/L) and MS12 (2,4,D 2 mg/L , NAA 1 mg/L, GA3 0.1 mg/L) and the best medium for regeneration was MS6 (KIN 1 mg/L, IAA 0.1 mg/L) which gave an average of 2 plants from every callus piece. (author

Improvement of Caper (Capparis spinosa L) propagation using in vitro culture and gamma irradiation

International Nuclear Information System (INIS)

Al-Safadi, B.; Elias, R.

2009-05-01

accompanied with an increase in shoot rooting percentage from 75 to 100% and with an increase in number of roots per plant. The effects of MS and Rugini media on the growth of caper cuttings collected from the field were studied. The results indicated that the MS medium was better than the Rugini medium with an average length of shoots being, 3.2 cm as compared to 2.4 cm when Rugini medium was used. The influence of different growth regulators on adventitious shoot formation was also studied. It appeared that the use of 2 mg/L ZR and 1 mg/L NAA resulted in 5.5 shoots as compared to 2.2 shoots when only GA3 (2 mg/L) was added to the culture medium. The influence of some plant growth regulators on the formation of callus was also studied using cross section of unripe and variable size fruits. The best media for callus induction were MS9 (BA 1 mg/L, NAA 0.1 mg/L) and MS10 (Kin 0.5 mg/L, 2,4, D 2 mg/L) with more callus being produced on peeled fruits than on unpeeled ones. We studied also the influence of plant growth regulators on the formation of callus studied using leaves and stem parts. The best 2 media for this purpose were MS9 (BA 1 mg/L, NAA 0.1 mg/L) and MS12 (2,4,D 2 mg/L , NAA 1 mg/L, GA3 0.1 mg/L) and the best medium for regeneration was MS6 (KIN 1 mg/L, IAA 0.1 mg/L) which gave an average of 2 plants from every callus piece. (author)

Effects of GA3 applications on seedlesness and fruit quality in black myrtle (Myrtus communis L.

Directory of Open Access Journals (Sweden)

Esra Alım

2017-12-01

Full Text Available Myrtle (Myrtus communis L. is one of the medical and aromatic plants naturally grown in Mediterranean basin. Myrtle fruits are mostly consumed as fresh or dried while essential oils obtained from the leaves are widely used in pharmacy, perfumery, cosmetic and even as pesticide. Myrtle fruits have white and black color. Nowadays, there is a big demand for myrtle fruits because of its high antioxidant capacity. But it contains high amount of seeds which reduce marketing and production. Main objective of this study is to investigate the effects of GA3 on seedlesness and quality in black myrtle fruits. At different flowering stages, GA3 dose of 100 ppm were applied to whole of the plants. Some applications significantly reduced seed number in fruits. Two applications of GA3 at great ballon and full bloom stages consecutively decreased seed number from 10.69 (control to 1.98 seed fruit-1 . In addition, with three consecutive application of GA3, seed rate decreased to 4.98% while 15.08% in control. Some GA3 applications resulted in fully seedless fruits up to 10.67%. Conversely, GA3 applications did not change fruit weight and some biochemical parameters of fruits.

Linagliptin potentiates the effect of l-dopa on the behavioural, biochemical and immunohistochemical changes in experimentally-induced Parkinsonism: Role of toll-like receptor 4, TGF-β1, NF-κB and glucagon-like peptide 1.

Science.gov (United States)

Kabel, Ahmed M; Omar, Mohamed S; Alhadhrami, A; Alharthi, Salman S; Alrobaian, Majed M

2018-05-01

Our aim was to assess the effect of different doses of linagliptin with or without l-dopa/Carbidopa on 1-methyl-4-phenyl-1,2,3,6-tetrahydropyridine (MPTP)-induced parkinsonism in mice. Eighty Balb/c mice were divided into 8 equal groups: Control; MPTP; MPTP + l-dopa/Carbidopa; MPTP + linagliptin 3 mg/kg/day; MPTP + linagliptin 10 mg/kg/day; MPTP + Carboxymethyl cellulose; MPTP + l-dopa/Carbidopa + linagliptin 3 mg/kg/day and MPTP + l-dopa/Carbidopa + linagliptin 10 mg/kg/day. Striatal dopamine, tumor necrosis factor alpha (TNF-α), interleukin 10 (IL-10), transforming growth factor beta 1 (TGF-β1), toll-like receptor 4 (TLR4), antioxidant enzymes, adenosine triphosphate (ATP), glucagon-like peptide-1 (GLP-1), receptors of advanced glycation end products (RAGE), nuclear factor (erythroid-derived 2)-like 2 (Nrf2), heme oxygenase-1 (HO-1), mitochondrial complex I activity, catalepsy and total swim scores were measured. Also, the substantia nigra was subjected to immunohistochemical examination. The combination of l-dopa/Carbidopa and linagliptin in a dose-dependent manner resulted in significant improvement of the behavioural changes, striatal dopamine, antioxidant parameters, Nrf2/HO-1 content, GLP-1, ATP and mitochondrial complex I activity with significant decrease in striatal RAGE, TGF-β1, TNF-α, IL-10, TLR4 and alleviated the immunohistochemical changes better than the groups that received either l-dopa/Carbidopa or linagliptin alone. The combination of l-dopa/Carbidopa and linagliptin might represent a promising therapeutic modality for management of parkinsonism. Copyright © 2018 Elsevier Inc. All rights reserved.

RESPON PEMBENTUKAN KALUS KORO BENGUK (MUCUNA PRURIENS L. PADA BERBAGAI KONSENTRASI 2,4-D DAN BAP

Directory of Open Access Journals (Sweden)

R. Ariani

2016-11-01

Full Text Available Penelitian ini bertujuan untuk menentukan konsentrasi 2,4-dichlorophenoxy acetic acid (2,4-D dan benzylamino purin (BAP optimal dalam pembentukan kalus dari eksplan setengah biji koro benguk (Mucuna pruriens L.. Rancangan penelitian yang digunakan ialah rancangan acak lengkap dengan dua faktor, yaitu konsentrasi 2,4-D (0,5 ppm, 1 ppm, 1,5 ppm, 2 ppm dan BAP (1 ppm, 2 ppm, 3 ppm untuk induksi kalus. Hasil induksi dipindahkan pada media MS0, kemudian dilanjutkan pada media MS yang ditambah BAP, IBA, GA. Parameter yang diamati adalah waktu terbentuk kalus, persentase eksplan berkalus, berat kalus per eksplan, warna dan tekstur kalus. Pada tahap induksi kalus, BAP 3 mg/l menyebabkan pertumbuhan kalus terberat dibandingkan konsentrasi lainnya. Sementara pada tahap diferensiasi, konsentrasi BAP 3 ppm dan 2,4-D 1 ppm merupakan konsentrasi yang mengakibatkan persentase kalus sehat tertinggi. Perlakuan 2,4-D 1 ppm dan BAP 3 ppm menghasilkan kalus putih transparan, kompak, dan berat kalus tertinggi (0,49 gram. Konsentrasi tersebut merupakan konsentrasi yang disarankan untuk menumbuhkan kalus koro bengukThis research aimed to determine the optimal concentration of 2,4-D and BAP in callus formation from an explant of half seed Mucuna pruriens. The research design was used completely randomized design with two factors: the concentration of 2,4-D (0.5 ppm, 1 ppm, 1.5 ppm, 2 ppm  and BAP (1 ppm, 2 ppm, and 3 ppm for callus inductions. The induction result is moved to MS0 medium, then continued to MS medium which was added by BAP, IBA, GA. The measured parameters were: callus formation time, the percentage of callus explants, the weight of callus for each explants, color and texture of callus. During induction phase BAP 3 ppm caused the heaviest callus growth than others, meanwhile in differentiation phase BAP 3 ppm and 2,4-D 1 ppm caused the highest percentage of healthy callus. Treatment of 2,4-D 1 ppm and BAP 3 ppm produced white and compact transparent

Dynamic water vapor sorption on Mg(Ga3+)O mixed oxides: Analysis of the LDH thermal regeneration process

International Nuclear Information System (INIS)

Bedolla-Valdez, Zaira I.; Ramirez-Solis, Sergio; Prince, Julia; Lima, Enrique; Pfeiffer, Heriberto; Valente, Jaime S.

2013-01-01

Highlights: ► Ga-LDH regeneration process was analyzed varying the relative humidity. ► Ga-LDH rehydrates faster than aluminum content LDH materials. ► Gallium seems to favor diffusion processeses during LDH regeneration. - Abstract: The rehydration process of the calcined MgGa-layered double hydroxides (Ga-LDH) was analyzed at different temperatures and relative humidities. Results clearly showed that Ga-LDH sample presented an excellent regeneration kinetic, in comparison to the aluminum typical one. Different techniques such as X-ray diffraction, infrared spectroscopy and thermal analysis were used to elucidate the presented results

Thermodynamic properties of CuCr/sub 2/S/sub 4/ solid solutions in Cusub(1/2)Msub(1/2) Crsub(2)Ssub(4) (M - Ga, In)

Energy Technology Data Exchange (ETDEWEB)

Titov, V.V.; Kesler, Ya.A.; Shelkotunov, V.A.; Gordeev, I.V.; Tret' yakov, Yu.D.

1985-04-01

By means of an adiabatic calorimeter and quartz dilatometer for CuCr/sub 2/S/sub 4/ in Cusub(1/2)Msub(1/2) Crsub(2)Ssub(4) (M-Ga, In) temperature dependences of heat capacity are determined. The contribution of various components into heat capacity is estimated, thermodynamic parameters of magnetic transformation are calculated.

Harvest time and post-harvest quality of Fuyu persimmon treated before harvest with gibberellic acid and aminoetoxyvinilglycine

Directory of Open Access Journals (Sweden)

Ricardo Antonio Ayub

2008-12-01

Full Text Available The aim of this work was to evaluate the effects of gibberellic acid (GA3 and aminoetoxyvinilglycine (AVG applied in preharvest spraying, on the retardation of the harvest and on the quality of persimmon fruits cv. Fuyu. The experiment was carried in randomized complete block design. The treatments were: control, 136mgL-1 of AVG, 272 mgL-1 of AVG, 36mgL-1 of GA3, 72mgL-1 of GA3 and 136mgL-1 of AVG + 36mgL-1 of GA3, spraying 30 days before the first harvest. The fruits were harvested twice and stored at 4ºC. The chemical and physical evaluations of the fruits were carried out the date of the harvest and at intervals of 15 days followed by four days at 20ºC. In conclusion, the application of AVG (136mgL-1 or GA3 (72mgL-1 maintained the firmness of the fruits and delayed harvest by twenty days. However, fruits harvested in the initial state of ripening were more sensitive to chilling injury and were unable to support 15 days of storage at 4ºC. The plant growth regulators were not efficient in prolonged storage due to the fact that the concentration of sugars was lower in the treatments than in the control.

Heavy Mg-doping of (Al,Ga)N films for potential applications in deep ultraviolet light-emitting structures

Science.gov (United States)

Liang, Y. H.; Towe, E.

2018-03-01

Doping of high aluminum-containing (Al,Ga)N thin films has remained a challenging problem that has hindered progress in the development of deep ultraviolet light-emitters. This paper reports on the synthesis and use of heavily doped (Al,Ga)N films in deep ultraviolet (˜274 nm) light-emitting structures; these structures were synthesized by molecular beam epitaxy under liquid-metal growth conditions that facilitate the incorporation of extremely high density of Mg dopant impurities (up to 5 × 1019 cm-3) into aluminum-rich (Al,Ga)N thin films. Prototypical light-emitting diode structures incorporating Al0.7Ga0.3N films doped with Mg impurities that ionize to give free hole carrier concentrations of up to 6 × 1017 cm-3 exhibit external quantum efficiencies of up 0.56%; this is an improvement from previous devices made from molecular beam epitaxy-grown materials. This improvement is believed to be due to the high hole carrier concentration enabled by the relatively low activation energy of 220 meV compared to the expected values of 408-507 meV for Al0.7Ga0.3N films.

A new organic superconductor, beta-(BDA-TTP)2GaCl4 [BDA-TTP = 2,5-(1,3-dithian-2-ylidene)-1,3,4,6-tetrathiapentalene].

Science.gov (United States)

Yamada, Jun-ichi; Toita, Takashi; Akutsu, Hiroki; Nakatsuji, Shin'ichi; Nishikawa, Hiroyuki; Ikemoto, Isao; Kikuchi, Koichi; Choi, Eun S; Graf, David; Brooks, James S

2003-09-07

The preparation, crystal structure and physical properties of beta-(BDA-TTP)2GaCl4 has been investigated; the salt exhibits superconductivity at 3.1 K (onset) under a hydrostatic pressure of 7.6 kbar.

Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

OpenAIRE

Hongling Wei; Zhengwei Chen; Zhenping Wu; Wei Cui; Yuanqi Huang; Weihua Tang

2017-01-01

Ga2O3 with a wide bandgap of ∼ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE) at different substrate temperatures. Th...

GaN epilayers on nanopatterned GaN/Si(1 1 1) templates: Structural and optical characterization

International Nuclear Information System (INIS)

Wang, L.S.; Tripathy, S.; Wang, B.Z.; Chua, S.J.

2006-01-01

Template-based nanoscale epitaxy has been explored to realize high-quality GaN on Si(1 1 1) substrates. We have employed polystyrene-based nanosphere lithography to form the nano-hole array patterns on GaN/Si(1 1 1) template and then, subsequent regrowth of GaN is carried out by metalorganic chemical vapor deposition (MOCVD). During the initial growth stage of GaN on such nanopatterned substrates, we have observed formation of nanoislands with hexagonal pyramid shape due to selective area epitaxy. With further epitaxial regrowth, these nanoislands coalesce and form continuous GaN film. The overgrown GaN on patterned and non-patterned regions is characterized by high-resolution X-ray diffraction (HRXRD) and high-spatial resolution optical spectroscopic methods. Micro-photoluminescence (PL), micro-Raman scattering and scanning electron microscopy (SEM) have been used to assess the microstructural and optical properties of GaN. Combined PL and Raman data analyses show improved optical quality when compared to GaN simultaneously grown on non-patterned bulk Si(1 1 1). Such thicker GaN templates would be useful to achieve III-nitride-based opto- and electronic devices integrated on Si substrates

Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

Directory of Open Access Journals (Sweden)

Hongling Wei

2017-11-01

Full Text Available Ga2O3 with a wide bandgap of ∼ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE at different substrate temperatures. The influences of substrate temperature on structural and optical properties have been systematically investigated by means of X-ray diffraction, Transmission electron microscope and UV-vis absorption spectra. High quality cubic structure and [111] oriented CuGa2O4 film can be obtained at substrate temperature of 750 °C. It’s also demonstrated that the CuGa2O4 film has a bandgap of ∼ 4.4 eV and a best crystal quality at 750 °C, suggesting that CuGa2O4 film is a promising candidate for applications in ultraviolet optoelectronic devices.

Preclinical Evaluation of 68Ga-DOTA-Minigastrin for the Detection of Cholecystokinin-2/Gastrin Receptor–Positive Tumors

Science.gov (United States)

Brom, Maarten; Joosten, Lieke; Laverman, Peter; Oyen, Wim J.G.; Béhé, Martin; Gotthardt, Martin; Boerman, Otto C.

2011-01-01

In comparison to somatostatin receptor scintigraphy, gastrin receptor scintigraphy using 111In-DTPA-minigastrin (MG0) showed added value in diagnosing neuroendocrine tumors. We investigated whether the 68Ga-labeled gastrin analogue DOTA-MG0 is suited for positron emission tomography (PET), which could improve image quality. Targeting of cholecystokinin-2 (CCK2)/gastrin receptor–positive tumor cells with DOTA-MG0 labeled with either 111In or 68Ga in vitro was investigated using the AR42J rat tumor cell line. Biodistribution was examined in BALB/c nude mice with a subcutaneous AR42J tumor. In vivo PET imaging was performed using a preclinical PET–computed tomographic scanner. DOTA-MG0 showed high receptor affinity in vitro. Biodistribution studies revealed high tumor uptake of 68Ga-DOTA-MG0: 4.4 ± 1.3 %ID/g at 1 hour postinjection. Coadministration of an excess unlabeled peptide blocked the tumor uptake (0.7 ± 0.1 %ID/g), indicating CCK2/gastrin receptor–mediated uptake (p = .0005). The biodistribution of 68Ga-DOTA-MG0 was similar to that of 111In-DOTA-MG0. Subcutaneous and intraperitoneal tumors were clearly visualized by small-animal PET imaging with 5 MBq 68Ga-DOTA-MG0. 111In- and 68Ga-labeled DOTA-MG0 specifically accumulate in CCK2/gastrin receptor–positive AR42J tumors with similar biodistribution apart from the kidneys. AR42J tumors were clearly visualized by microPET. Therefore, 68Ga-DOTA-MG0 is a promising tracer for PET imaging of CCK2/gastrin receptor–positive tumors in humans. PMID:21439259

Preclinical Evaluation of 68Ga-DOTA-Minigastrin for the Detection of Cholecystokinin-2/Gastrin Receptor-Positive Tumors

Directory of Open Access Journals (Sweden)

Maarten Brom

2011-03-01

Full Text Available In comparison to somatostatin receptor scintigraphy, gastrin receptor scintigraphy using 111In-DTPA-minigastrin (MG0 showed added value in diagnosing neuroendocrine tumors. We investigated whether the 68Ga-labeled gastrin analogue DOTA-MG0 is suited for positron emission tomography (PET, which could improve image quality. Targeting of cholecystokinin-2 (CCK2/gastrin receptor-positive tumor cells with DOTA-MG0 labeled with either 111In or 68Ga in vitro was investigated using the AR42J rat tumor cell line. Biodistribution was examined in BALB/c nude mice with a subcutaneous AR42J tumor. In vivo PET imaging was performed using a preclinical PET-computed tomographic scanner. DOTA-MG0 showed high receptor affinity in vitro. Biodistribution studies revealed high tumor uptake of 68Ga-DOTA-MG0: 4.4 ± 1.3 %ID/g at 1 hour postinjection. Coadministration of an excess unlabeled peptide blocked the tumor uptake (0.7 ± 0.1 %ID/g, indicating CCK2/gastrin receptor-mediated uptake (p = .0005. The biodistribution of 68Ga-DOTA-MG0 was similar to that of 111In-DOTA-MG0. Subcutaneous and intraperitoneal tumors were clearly visualized by small-animal PET imaging with 5 MBq 68Ga-DOTA-MG0. 111In- and 68Ga-labeled DOTA-MG0 specifically accumulate in CCK2/gastrin receptor-positive AR42J tumors with similar biodistribution apart from the kidneys. AR42J tumors were clearly visualized by microPET. Therefore, 68Ga-DOTA-MG0 is a promising tracer for PET imaging of CCK2/gastrin receptor-positive tumors in humans.

Experiment prediction for Loft Nonnuclear Experiment L1-4

International Nuclear Information System (INIS)

White, J.R.; Berta, V.T.; Holmstrom, H.L.O.

1977-04-01

A computer analysis, using the WHAM and RELAP4 computer codes, was performed to predict the LOFT system thermal-hydraulic response for Experiment L1-4 of the nonnuclear (isothermal) test series. Experiment L1-4 will simulate a 200 percent double-ended offset shear in the cold leg of a four-loop large pressurized water reactor. A core simulator will be used to provide a reactor vessel pressure drop representative of the LOFT nuclear core. Experiment L1-4 will be initiated with a nominal isothermal primary coolant temperature of 282.2 0 C, a pressurizer pressure of 15.51 MPa, and a primary coolant flow of 270.9 kg/s. In general, the predictions of saturated blowdown for Experiment Ll-4 are consistent with the expected system behavior, and predicted trends agree with results from Semiscale Test S-01-4A, which simulated the Ll-4 experiment conditions

Neutron Powder Diffraction Measurements of the Spinel MgGa 2 O 4 :Cr 3+ - A Comparative Study between the High Flux Diffractometer D2B at the ILL and the High Resolution Powder Diffractometer Aurora at IPEN

DEFF Research Database (Denmark)

Silva, M A F M da; Sosman, L P; Yokaichiya, F

2012-01-01

Optical materials that emit from the visible to the near-infrared spectral region are of great interest due to their possible application as tunable radiation sources, as signal transmission, display, optoelectronics signal storage, cellulose industry as well as in dosimetry. One important family...... of such systems are the spinel compounds doped with Cr 3+ , in which the physical the properties are related to the insertion of punctual defects in the crystalline structure. The purpose of our work is two fold. First, we compare the luminescence of the MgGa 2 O 4 -Ga 2 O 3 system with the single phase Ga 2 O 3...

Viisavabadus USA-ga läheneb vaidlustes / Ahto Lobjakas

Index Scriptorium Estoniae

Lobjakas, Ahto, 1970-

2008-01-01

USA soovib Eesti kodanike viisanõudest vabastamiseks kõrgendatud turvameetmeid. Viisavabadust taotlev Tšehhi sõlmis USA-ga vastastikuse mõistmise memorandumi, EL-i nn. vanad liikmesriigid ja Euroopa Komisjon süüdistavad USA-ga kahepoolsete lepingute sõlmijaid Euroopa ühtsuse lõhestamises. Lisa: Eesti sõlmib lepingu ilmselt märtsi keskel

Carbon source dependent somatic embryogenesis and plant regeneration in cotton, Gossypium hirsutum L. cv. SVPR2 through suspension cultures.

Science.gov (United States)

Ganesan, M; Jayabalan, N

2005-10-01

Highly reproducible and simple protocol for cotton somatic embryogenesis is described here by using different concentrations of maltose, glucose, sucrose and fructose. Maltose (30 g/l) is the best carbon source for embryogenic callus induction and glucose (30 g/l) was suitable for induction, maturation of embryoids and plant regeneration. Creamy white embryogenic calli of hypocotyl explants were formed on medium containing MS basal salts, myo-inositol (100 mg/l), thiamine HCI (0.3 mg/l), picloram (0.3 mg/l), Kin (0.1 mg/l) and maltose (30 g/l). During embryo induction and maturation, accelerated growth was observed in liquid medium containing NH3NO4 (1 g/l), picloram (2.0 mg/l), 2 ip (0.2 mg/l), Kin (0.1 mg/l) and glucose (30 g/l). Before embryoid induction, large clumps of embryogenic tissue were formed. These tissues only produced viable embryoids. Completely matured somatic embryos were germinated successfully on the medium fortified with MS salts, myo-inositol (50 mg/l), thiamine HCl (0.2 mg/l), GA3 (0.2 mg/l), BA (1.0 mg/l) and glucose (30 g/l). Compared with earlier reports, 65% of somatic embryo germination was observed. The abnormal embryo formation was highly reduced by using glucose (30 g/l) compared to other carbon sources. The regenerated plantlets were fertile but smaller in height than the seed derived control plants.

L10-MnGa based magnetic tunnel junction for high magnetic field sensor

Science.gov (United States)

Zhao, X. P.; Lu, J.; Mao, S. W.; Yu, Z. F.; Wang, H. L.; Wang, X. L.; Wei, D. H.; Zhao, J. H.

2017-07-01

We report on the investigation of the magnetic tunnel junction structure designed for high magnetic field sensors with a perpendicularly magnetized L10-MnGa reference layer and an in-plane magnetized Fe sensing layer. A large linear tunneling magnetoresistance ratio up to 27.4% and huge dynamic range up to 5600 Oe have been observed at 300 K, with a low nonlinearity of 0.23% in the optimized magnetic tunnel junction (MTJ). The field response of tunneling magnetoresistance is discussed to explain the field sensing properties in the dynamic range. These results indicate that L10-MnGa based orthogonal MTJ is a promising candidate for a high performance magnetic field sensor with a large dynamic range, high endurance and low power consumption.

Thermal quenching of Eu{sup 2+} emission in Ca- and Sr-Ga{sub 2}S{sub 4} in relation with VRBE schemes

Energy Technology Data Exchange (ETDEWEB)

Dobrowolska, A. [Delft University of Technology, Faculty of Applied Sciences, Department of Radiation Science and Technology, Mekelweg 15, 2629JB Delft (Netherlands); Faculty of Engineering and Economics, Wrocław University of Economics, Komandorska 118/120, 53-345 Wrocław (Poland); Dierre, B., E-mail: B.F.P.R.Dierre@tudelft.nl [Delft University of Technology, Faculty of Applied Sciences, Department of Radiation Science and Technology, Mekelweg 15, 2629JB Delft (Netherlands); Fang, C.M. [BCAST, Brunel University London, Waterside House, Cowley Business Park, Uxbridge, Middlesex UB8 2AD (United Kingdom); Hintzen, H.T. [Delft University of Technology, Faculty of Applied Sciences, Department of Radiation Science and Technology, Mekelweg 15, 2629JB Delft (Netherlands); Dorenbos, P., E-mail: P.Dorenbos@tudelft.nl [Delft University of Technology, Faculty of Applied Sciences, Department of Radiation Science and Technology, Mekelweg 15, 2629JB Delft (Netherlands)

2017-04-15

Structural and optical properties of MGa{sub 2}S{sub 4} (M = Mg, Zn, Ca, Sr, Ba) compounds have been compared, and the vacuum referred binding energy (VRBE) schemes were constructed for the lanthanide ions in the iso-structural compounds CaGa{sub 2}S{sub 4} and SrGa{sub 2}S{sub 4} employing literature data. The VRBE of an electron in the 5d excited state of Eu{sup 2+} was found at 0.75 and 0.97 eV below the bottom of the conduction band (CB) in CaGa{sub 2}S{sub 4}:Eu and SrGa{sub 2}S{sub 4}:Eu, respectively. Such differences explains the unexpected higher thermal quenching temperature reported for Eu{sup 2+}-doped SrGa{sub 2}S{sub 4} (T{sub 50%} = ∼475 K) compared to Eu{sup 2+}-doped CaGa{sub 2}S{sub 4} (T{sub 50%} = 400 K) The significantly lower VRBE at the CB-bottom in CaGa{sub 2}S{sub 4} versus SrGa{sub 2}S{sub 4} may be explained by the shorter Ga-S bond lengths in SrGa{sub 2}S{sub 4}.

Magnesium doping in InAlAs and InGaAs/Mg films lattice-matched to InP grown by MOVPE

Energy Technology Data Exchange (ETDEWEB)

Ezzedini, Maher, E-mail: maher.ezz7@gmail.com [Monastir University, Laboratoire de Micro-Optoélectroniques et Nanostructures (Tunisia); Sfaxi, Larbi, E-mail: sfaxi.larbi@yahoo.fr [Sousse University, High School of Sciences and Technology of Hammam Sousse (Tunisia); M’Ghaieth, Ridha, E-mail: ridha.mghaieth@fsm.rnu.tn [Monastir University, Laboratoire de Micro-Optoélectroniques et Nanostructures (Tunisia)

2017-01-15

Mg-doped InAlAs and InGaAs films were grown at 560 °C lattice matched to InP semi-insulting substrate by metalorganic vapor phase epitaxy (MOVPE) under various Cp{sub 2}Mg flow conditions. Hall effect, photoluminescence (PL), high-resolution X-ray diffraction (HR-XRD), and secondary ion mass (SIMS) were the tools used in this work. The crystalline quality and the n-p conversion of the InAlAs and InGaAs/Mg films are described and discussed in relation to the Cp{sub 2}Mg flow. Distinguishing triple emission peaks in PL spectra is observed and seems to be strongly dependent on the Cp{sub 2}Mg flow. SIMS is employed to analyze the elements in the epitaxial layers. The variation of indium and magnesium components indicates a decrease of magnesium incorporation during the growth of InAlAs layers leading to a contracted lattice. In addition, the magnesium incorporation in the InGaAs lattice during growth has been confirmed by SIMS.

Composition and properties tailoring in Mg.sup.2+./sup. codoped non-stoichiometric LuAG:Ce,Mg scintillation ceramics

Czech Academy of Sciences Publication Activity Database

Liu, S.; Mareš, Jiří A.; Babin, Vladimir; Hu, C.; Kou, H.; D'Ambrosio, C.; Li, J.; Pan, Y.; Nikl, Martin

2017-01-01

Roč. 37, č. 4 (2017), s. 1689-1694 ISSN 0955-2219 R&D Projects: GA ČR GA16-15569S Institutional support: RVO:68378271 Keywords : non-stoichiometric ceramic s * LuAG:Ce * Mg scintillator * Mg 2+ codopant * antisite defects * afterglow Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.411, year: 2016

Antimalarial peroxides: the first intramolecular 1,2,4,5-tetraoxane

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BOGDAN A. SOLAJA

2002-07-01

Full Text Available An intramolecular steroidal 1,2,4,5-tetraoxane has been synthesised in six steps starting from methyl 3-oxo-7a,12a-diacetoxy-5b-cholan-24-oate. The synthesised 1,2,4,5-tetraoxane has moderate in vitro antimalarial activity against P. falciparum strains (IC50 (D6 = 0.35 mg/mL; IC50 (W2 = 0.29 mg/mL.

Effect of giberellic acid (GA4/7) and girdling on induction of reproductive structures in Pinus patula

Energy Technology Data Exchange (ETDEWEB)

Vargas-Hernandez, J.J.; Vargas-Abonce, J.I.

2016-07-01

Aim of the study. Seed production in forest tree species commonly takes a long time due to the length of the juvenile stage. Even though several treatments have been used to induce early flowering in conifer species, experience on their use in subtropical Pinus species is limited. This study aimed to evaluate the effect of GA4/7 dose (0, 1.27 and 2.54 mg cm-2) and application time (July-October), alone or in combination with partial stem girdling, on male and female strobili production in young Pinus patula Schiede ex Schltdl. et Cham. clones. Area of study: Nine clones with different flowering background of high-elevation Pinus patula growing in a six-year old seed orchard established in Central México (Aquixtla, Puebla) at 2,800 m elevation. Material and methods: Two independent flowering trials (FT1 and FT2) were carried out in the seed orchard during the 2009 and 2010 flowering cycles; similar factors were evaluated at both trials but time of application, clones tested, and experimental design used varied for each of them. Partial stem girdling was done at the base of the trunk and the GA4/7 solution was injected into the xylem above the point of girdling. The following spring, the percentage of trees with strobili and the number of strobili per tree were determined for both male and female structures. Main results: Significant differences (p ≤ 0.05) among clones in flowering capacity were found at both trials. None of the treatments applied in FT1 resulted in an increase of strobili formation, most probably because they were applied too late in the growing season. In FT2, however, application of GA4/7 combined with partial stem girdling increased the percentage of trees with strobili and the number of strobili of both sexes, particularly when applied in early July. Partial stem girdling was more effective on promoting male strobili than female ones in gibberellin-treated grafts. Research highlights: Timing of GA4/7 application and stem girdling was

Comparing the Electrochemical Performance of LiFePO4/C Modified by Mg Doping and MgO Coating

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Jianjun Song

2013-01-01

Full Text Available Supervalent cation doping and metal oxide coating are the most efficacious and popular methods to optimize the property of LiFePO4 lithium battery material. Mg-doped and MgO-coated LiFePO4/C were synthesized to analyze their individual influence on the electrochemical performance of active material. The specific capacity and rate capability of LiFePO4/C are improved by both MgO coating and Mg doping, especially the Mg-doped sample—Li0.985Mg0.015FePO4/C, whose discharge capacity is up to 163 mAh g−1, 145.5 mAh g−1, 128.3 mAh g−1, and 103.7 mAh g−1 at 1 C, 2 C, 5 C, and 10 C, respectively. The cyclic life of electrode is obviously increased by MgO surface modification, and the discharge capacity retention rate of sample LiFePO4/C-MgO2.5 is up to 104.2% after 100 cycles. Comparing samples modified by these two methods, Mg doping is more prominent on prompting the capacity and rate capability of LiFePO4, while MgO coating is superior in terms of improving cyclic performance.

Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

Science.gov (United States)

Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P.

2007-10-01

MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2eV, which corresponds to a 3.2eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior.

Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P.

2007-01-01

MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12 nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2 eV, which corresponds to a 3.2 eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior

Ácido giberélico (GA3 no crisântemo (Dedranthema grandiflora Tzvelev. de corte 'viking': cultivo verão/outono

Directory of Open Access Journals (Sweden)

Schmidt Claudinei Márcio

2003-01-01

Full Text Available Este trabalho tem como objetivo avaliar a ação do ácido giberélico (AG3 em plantas crisântemo de corte 'Viking' quanto a parâmetros fenométricos, melhor época e concentração da aplicação para obter-se hastes de melhor qualidade no cultivo de verão/outono. Avaliou-se o efeito de cinco épocas de aplicação (sem aplicação, aplicação na segunda, quarta, oitava e décima semana após o plantio e quatro concentrações (0, 100, 200 e 300 mg.L-1 de GA3. Verificou-se que as maiores alturas foram obtidas com as aplicações na segunda e quarta semanas de cultivo e nas concentrações entre 200 a 300 mg.L-1. O maior diâmetro de haste e pedúnculo floral foram obtidos com a aplicação de 100 a 200 mg.L-1 GA3 na quarta semana. A concentração de 200 mg.L-1 de GA3, independente da época de aplicação proporcionou a antecipação do florescimento em cinco dias, todas as concentrações aplicadas a partir da oitava semana provocaram o clareamento do disco floral.

Single crystal structures of the new vanadates CuMgVO{sub 4} and AgMgVO{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Ben Yahia, Hamdi, E-mail: Hyahia@qf.org.qa [Research Institute of Electrochemical Energy, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan); Qatar Environment and Energy Research Institute, Hamad Bin Khalifa University, Qatar Foundation, PO Box 5825, Doha (Qatar); Shikano, Masahiro, E-mail: shikano.masahiro@aist.go.jp [Research Institute of Electrochemical Energy, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan); Essehli, Rachid; Belharouak, Ilias [Qatar Environment and Energy Research Institute, Hamad Bin Khalifa University, Qatar Foundation, PO Box 5825, Doha (Qatar)

2016-08-01

The new compounds CuMgVO{sub 4} and AgMgVO{sub 4} have been synthesized by a solid state reaction route. Their crystal structures were determined from single-crystal X-ray diffraction data. CuMgVO{sub 4} crystallizes with Na{sub 2}CrO{sub 4}-type structure with space group Cmcm, a = 5.6932 (10), b = 8.7055 (15), c = 6.2789 (10) Å, V = 311.20 (9) Å{sup 3}, and Z = 4, whereas AgMgVO{sub 4} crystallizes in the maricite-type structure with space group Pnma, a = 9.4286 (14), b = 6.7465 (10), c = 5.3360 (8) Å, V = 339.42 (9) Å{sup 3}, and Z = 4. Both structures of CuMgVO{sub 4}, and AgMgVO{sub 4} contain MgO{sub 4} chains made up of edge-sharing MgO{sub 6} octahedra. In CuMgVO{sub 4} the MgO{sub 4} chains are interconnected through CuVO{sub 4} double chains made up of VO{sub 4} and CuO{sub 4} tetrahedra sharing corners and edges, however in AgMgVO{sub 4} the chains are interlinked by the VO{sub 4} and AgO{sub 4} tetrahedra sharing only corners. - Highlights: • We have been able to grow CuMgVO{sub 4} and AgMgVO{sub 4} single crystals. • We solved their crystal structures using single crystal data. • We compared the crystal structures of CuMgVO{sub 4} and AgMgVO{sub 4}.

Stability at Potential Maxima: The L-4 and L-5 Points of the Restricted Three-Body Problem.

Science.gov (United States)

Greenberg, Richard; Davis, Donald R.

1978-01-01

Describes a dynamical system which is stable at potential maxima. The maxima, called L-4 and L-5, are stable locations of the restricted three-body problem. Energy loss from the system will tend to drive it away from stability. (GA)

Rapid microwave hydrothermal synthesis of ZnGa2O4 with high photocatalytic activity toward aromatic compounds in air and dyes in liquid water

International Nuclear Information System (INIS)

Sun Meng; Li Danzhen; Zhang Wenjuan; Chen Zhixin; Huang Hanjie; Li Wenjuan; He Yunhui; Fu Xianzhi

2012-01-01

ZnGa 2 O 4 was synthesized from Ga(NO 3 ) 3 and ZnCl 2 via a rapid and facile microwave-assisted hydrothermal method. The photocatalytic properties of the as-prepared ZnGa 2 O 4 were evaluated by the degradation of pollutants in air and aqueous solution under ultraviolet (UV) light illumination. The results demonstrated that ZnGa 2 O 4 had exhibited efficient photocatalytic activities higher than that of commercial P25 (Degussa Co.) in the degradation of benzene, toluene, and ethylbenzene, respectively. In the liquid phase degradation of dyes (methyl orange, Rhodamine B, and methylene blue), ZnGa 2 O 4 has also exhibited remarkable activities higher than that of P25. After 32 min of UV light irradiation, the decomposition ratio of methyl orange (10 ppm, 150 mL) over ZnGa 2 O 4 (0.06 g) was up to 99%. The TOC tests revealed that the mineralization ratio of MO (10 ppm, 150 mL) was 88.1% after 90 min of reaction. A possible mechanism of the photocatalysis over ZnGa 2 O 4 was also proposed. - Graphical abstract: In the degradation of RhB under UV light irradiation, ZnGa 2 O 4 had exhibited efficient photo-activity, and after only 24 min of irradiation the decomposition ratio was up to 99.8%. Highlights: ► A rapid and facile M–H method to synthesize ZnGa 2 O 4 photocatalyst. ► The photocatalyst exhibits high activity toward benzene and dyes. ► The catalyst possesses more surface hydroxyl sites than TiO 2 (P25). ► Deep oxidation of different aromatic compounds and dyes over catalyst.

Fruit development, pigmentation and biochemical properties of wax apple as affected by localized Application of GA3 under field conditions

Directory of Open Access Journals (Sweden)

Mohammad Moneruzzaman Khandaker

2013-02-01

Full Text Available This study investigated the effects of gibberellin (GA3 on the fruit development, pigmentation and biochemical properties of wax apple. The wax apple trees were rubbing treated with 0, 20, 50 and 100 mgGA3/l under field conditions. The localized application (rubbing of 50 mg GA3/l significantly increased the fruit set, fruit length and diameter, color development, weight and yieldcompared to the control. In addition, GA3 treatments significantly reduced the fruit drop. With regard to the fruit quality, 50 mg/l GA3 treatment increased the juice content, K+, TSS, total sugar and sugar acid ratio of wax apple fruits. In addition, higher vitamin C, phenol, flavonoid, anthocyanin, carotene content, PAL and antioxidant activities were recorded in the treated fruits. There was a positive correlation between the peel colour and TSS content and between the PAL activity and anthocyanin formation in the GA3-treated fruit. It was concluded that rubbing with 50 mg/L GA3 at inflorescence developing point of phloem once a week from the tiny inflorescence bud until the flower opening resulted in better yield and quality of wax apple fruits and could be an effective technique to safe the environment from excessive spray.

Dynamic water vapor sorption on Mg(Ga{sup 3+})O mixed oxides: Analysis of the LDH thermal regeneration process

Energy Technology Data Exchange (ETDEWEB)

Bedolla-Valdez, Zaira I.; Ramirez-Solis, Sergio [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Circuito exterior s/n, Cd. Universitaria, Del. Coyoacán, CP 04510, México, DF (Mexico); Prince, Julia [Instituto Mexicano del Petróleo, Eje Central 152, CP 07730, México, DF (Mexico); Lima, Enrique [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Circuito exterior s/n, Cd. Universitaria, Del. Coyoacán, CP 04510, México, DF (Mexico); Pfeiffer, Heriberto, E-mail: pfeiffer@iim.unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Circuito exterior s/n, Cd. Universitaria, Del. Coyoacán, CP 04510, México, DF (Mexico); Valente, Jaime S. [Instituto Mexicano del Petróleo, Eje Central 152, CP 07730, México, DF (Mexico)

2013-02-10

Highlights: ► Ga-LDH regeneration process was analyzed varying the relative humidity. ► Ga-LDH rehydrates faster than aluminum content LDH materials. ► Gallium seems to favor diffusion processeses during LDH regeneration. - Abstract: The rehydration process of the calcined MgGa-layered double hydroxides (Ga-LDH) was analyzed at different temperatures and relative humidities. Results clearly showed that Ga-LDH sample presented an excellent regeneration kinetic, in comparison to the aluminum typical one. Different techniques such as X-ray diffraction, infrared spectroscopy and thermal analysis were used to elucidate the presented results.

Optical rectification in a strained GaAs{sub 0.9}P{sub 0.1}/GaAs{sub 0.6}P{sub 0.4} quantum dot: Simultaneous effects of electric and magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Vinolin, Ada [Dept. of Physics, Madurai Kamaraj University College, Alagarkoil Road, Madurai-625002 (India); Peter, A. John, E-mail: a.john.peter@gmail.com [Dept. of Physics, Government Arts College, Melur-625106, Tamilnadu (India)

2014-04-24

Simultaneous effects of electric field and magnetic field on exciton binding energy as a function of dot radius in a cylindrical GaAs{sub 0.9}P{sub 0.1}/GaAs{sub 0.6}P{sub 0.4} strained quantum dot are investigated. The strain contribution includes the strong built-in electric field induced by the spontaneous and piezoelectric polarizations. Numerical calculations are performed using variational procedure within the single band effective mass approximation. Optical rectification in the GaAs{sub 0.9}P{sub 0.1}/GaAs{sub 0.6}P{sub 0.4} quantum dot is computed in the presence of electric and magnetic fields.

Pharmacokinetic characterization of three novel 4-mg nicotine lozenges
.

Science.gov (United States)

Sukhija, Manpreet; Srivastava, Reena; Kaushik, Aditya

2018-03-01

Nicotine replacement therapy (NRT) increases the probability of smoking cessation. This study was conducted to determine if three prototype 4-mg nicotine lozenges produced locally in India were bioequivalent to a globally marketed reference product, Nicorette® 4-mg nicotine lozenge. Healthy adult smokers (N = 39) were treated with three prototype 4-mg nicotine lozenges in comparison with a reference 4-mg lozenge in this single-center, randomized, open-label, single-dose, 4-way crossover study. Pharmacokinetic sampling was obtained to test for bioequivalence using maximal plasma concentration (Cmax) and extent of absorption (AUC0-t). Secondarily, AUC;0-∞, time to maximal plasma concentration (tmax), half-life (T1/2), elimination rate constant (Kel), and safety of the prototype lozenges versus the reference lozenge were compared. Each prototype 4-mg nicotine lozenge was found to be bioequivalent to the reference 4-mg nicotine lozenge based on the ratio of geometric means and 90% confidence intervals for Cmax, AUC0-t, and AUC;0-∞. Although tmax; was significantly longer for prototype III, all four lozenges achieved maximum plasma nicotine concentrations at a median of 1.5 hours. The safety profiles of the three prototype 4-mg lozenges did not differ from that of the 4-mg reference product. Each prototype 4-mg nicotine lozenge was bioequivalent to the reference 4-mg nicotine lozenge and was well tolerated. Furthermore, as these bioequivalent prototypes differed in in-vitro dissolution profiles, these data suggest that performance from the in -vitro method deployed is not a firm predictor of pharmacokinetic behavior.
.

Concentrations in plasma, epithelial lining fluid, alveolar macrophages and bronchial mucosa after a single intravenous dose of 1.6 mg/kg of iclaprim (AR-100) in healthy men.

Science.gov (United States)

Andrews, J; Honeybourne, D; Ashby, J; Jevons, G; Fraise, A; Fry, P; Warrington, S; Hawser, S; Wise, R

2007-09-01

A validated microbiological assay was used to measure concentrations of iclaprim (AR-100) in plasma, bronchial mucosa (BM), alveolar macrophages (AM) and epithelial lining fluid (ELF) after a single 1.6 mg/kg intravenous 60 min iv infusion of iclaprim. Male volunteers were randomly allocated to three nominal sampling time intervals 1-2 h (Group A), 3-4 h (Group B) and 5.5-7.0 h (Group C) after the start of the drug infusion. Mean iclaprim concentrations in plasma, BM, AM and ELF, respectively, were for Group A 0.59 mg/L (SD 0.18), 0.51 mg/kg (SD 0.17), 24.51 mg/L (SD 21.22) and 12.61 mg/L (SD 7.33); Group B 0.24 mg/L (SD 0.05), 0.35 mg/kg (SD 0.17), 7.16 mg/L (SD 1.91) and 6.38 mg/L (SD 5.17); and Group C 0.14 mg/L (SD 0.05), no detectable level in BM, 5.28 mg/L (SD 2.30) and 2.66 mg/L (SD 2.08). Iclaprim concentrations in ELF and AM exceeded the MIC(90) for penicillin-susceptible Streptococcus pneumoniae (MIC90 0.06 mg/L), penicillin-intermediate S. pneumoniae (MIC90 2 mg/L), penicillin-resistant S. pneumoniae (MIC90 4 mg/L) for 7, 7 and 4 h, respectively, and Chlamydia pneumoniae (MIC90 0.5 mg/L) for 7 h. Mean iclaprim concentrations in ELF exceeded the MIC90 for Haemophilus influenzae (MIC90 4 mg/L) and Moraxella catarrhalis (MIC90 8 mg/L) for up to 4 and 2 h, respectively; in AM the MIC90 was exceeded for up to 7 h. Furthermore, the MIC90 for methicillin-resistant Staphylococcus aureus of 0.12 mg/L was exceeded at all sites for up to 7 h. These data suggest that iclaprim reaches lung concentrations that should be effective in the treatment of community-acquired pneumonia.

Maturação e qualidade pós-colheita de ameixas 'laetitia' com a aplicação pré-colheita de AVG e GA3

OpenAIRE

Cristiano André Steffens; Cassandro Vidal Talamini do Amarante; Ricardo Chechi; João Paulo Generoso Silveira; Thais Roseli Corrêa

2011-01-01

O objetivo deste trabalho foi avaliar o efeito da aplicação pré-colheita de aminoetoxivinilglicina (AVG; 0; 90; 125 mg L-1) e ácido giberélico (GA3; 0 e 100 mg L-1) sobre a maturação e a qualidade de ameixas 'Laetitia' após o armazenamento refrigerado. Foi utilizado o delineamento em blocos casualizados, com seis tratamentos (três doses de AVG x duas doses de GA3) e quatro repetições. A aplicação do GA3 e do AVG foi realizada 28 e 7 dias antes do início da primeira colheita, respectivamente. ...

Listeria monocytogenes serovar 4a is a possible evolutionary intermediate between L. monocytogenes serovars 1/2a and 4b and L. innocua.

Science.gov (United States)

Chen, Jianshun; Jiang, Lingli; Chen, Xueyan; Luo, Xiaokai; Chen, Yang; Yu, Ying; Tian, Guoming; Liu, Dongyou; Fang, Weihuan

2009-03-01

The genus Listeria consists of six closely related species and forms three phylogenetic groups: L. monocytogenes- L. innocua, L. ivanovii-L. seeligeri-L. welshimeri, and L. grayi. In this report, we attempted to examine the evolutionary relationship in the L. monocytogenes-L. innocua group by probing the nucleotide sequences of 23S rRNA and 16S rRNA, and the gene clusters lmo0029-lmo0042, ascBdapE, rplS-infC, and prs-ldh in L. monocytogenes serovars 1/2a, 4a, and 4b, and L. innocua. Additionally, we assessed the status of L. monocytogenes-specific inlA and inlB genes and 10 L. innocua-specific genes in these species/serovars, together with phenotypic characterization by using in vivo and in vitro procedures. The results indicate that L. monocytogenes serovar 4a strains are genetically similar to L. innocua in the lmo0035-lmo0042, ascB-dapE, and rplS-infC regions and also possess L. innocua-specific genes lin0372 and lin1073. Furthermore, both L. monocytogenes serovar 4a and L. innocua exhibit impaired intercellular spread ability and negligible pathogenicity in mouse model. On the other hand, despite resembling L. monocytogenes serovars 1/2a and 4b in having a nearly identical virulence gene cluster, and inlA and inlB genes, these serovar 4a strains differ from serovars 1/2a and 4b by harboring notably altered actA and plcB genes, displaying strong phospholipase activity and subdued in vivo and in vitro virulence. Thus, by possessing many genes common to L. monocytogenes serovars 1/2a and 4b, and sharing many similar gene deletions with L. innocua, L. monocytogenes serovar 4a represents a possible evolutionary intermediate between L. monocytogenes serovars 1/2a and 4b and L. innocua.

Phase formation in Na2MoO4 - MgMoO4 - Cr2(MoO4)3 system

International Nuclear Information System (INIS)

Kotova, I.Yu.; Kozhevnikova, N.M.

1998-01-01

Interaction within Na 2 MoO 4 - MgMoO 4 - Cr 2 (MoO 4 ) 3 ternary system is studied by X ray phase and DTA methods. State diagram of NaCr(MoO 4 ) 2 - MgMoO 4 section is plotted. Production of ternary molybdates of Na 1-x Mg 1-x Cr 1+x (MoO 4 ) 3 , where 0 ≤ x ≤ 0.3, and NaMg 3 Cr(MoO 4 ) 5 composition is ascertained [ru

Behaviour of Fe4O5-Mg2Fe2O5 solid solutions and their relation to coexisting Mg-Fe silicates and oxide phases

Science.gov (United States)

Uenver-Thiele, Laura; Woodland, Alan B.; Miyajima, Nobuyoshi; Ballaran, Tiziana Boffa; Frost, Daniel J.

2018-03-01

Experiments at high pressures and temperatures were carried out (1) to investigate the crystal-chemical behaviour of Fe4O5-Mg2Fe2O5 solid solutions and (2) to explore the phase relations involving (Mg,Fe)2Fe2O5 (denoted as O5-phase) and Mg-Fe silicates. Multi-anvil experiments were performed at 11-20 GPa and 1100-1600 °C using different starting compositions including two that were Si-bearing. In Si-free experiments the O5-phase coexists with Fe2O3, hp-(Mg,Fe)Fe2O4, (Mg,Fe)3Fe4O9 or an unquenchable phase of different stoichiometry. Si-bearing experiments yielded phase assemblages consisting of the O5-phase together with olivine, wadsleyite or ringwoodite, majoritic garnet or Fe3+-bearing phase B. However, (Mg,Fe)2Fe2O5 does not incorporate Si. Electron microprobe analyses revealed that phase B incorporates significant amounts of Fe2+ and Fe3+ (at least 1.0 cations Fe per formula unit). Fe-L2,3-edge energy-loss near-edge structure spectra confirm the presence of ferric iron [Fe3+/Fetot = 0.41(4)] and indicate substitution according to the following charge-balanced exchange: [4]Si4+ + [6]Mg2+ = 2Fe3+. The ability to accommodate Fe2+ and Fe3+ makes this potential "water-storing" mineral interesting since such substitutions should enlarge its stability field. The thermodynamic properties of Mg2Fe2O5 have been refined, yielding H°1bar,298 = - 1981.5 kJ mol- 1. Solid solution is complete across the Fe4O5-Mg2Fe2O5 binary. Molar volume decreases essentially linearly with increasing Mg content, consistent with ideal mixing behaviour. The partitioning of Mg and Fe2+ with silicates indicates that (Mg,Fe)2Fe2O5 has a strong preference for Fe2+. Modelling of partitioning with olivine is consistent with the O5-phase exhibiting ideal mixing behaviour. Mg-Fe2+ partitioning between (Mg,Fe)2Fe2O5 and ringwoodite or wadsleyite is influenced by the presence of Fe3+ and OH incorporation in the silicate phases.

Synthesis of uniform ZnGa2O4 nanoparticles with high photocatalytic activity

International Nuclear Information System (INIS)

Yuan, Yufeng; Huang, Junjian; Tu, Weixia; Huang, Simin

2014-01-01

Graphical abstract: - Highlights: • Uniform ZnGa 2 O 4 nanoparticles are obtained by microwave homogeneous coprecipitation. • CTAB benefits ZnGa 2 O 4 improving separation of photoinduced electrons and holes. • Microwave and calcining temperatures are optimized for the morphology of ZnGa 2 O 4 . • ZnGa 2 O 4 nanoparticles show superior photocatalysis in degradations of organic dyes. - Abstract: ZnGa 2 O 4 nanoparticles are obtained by microwave-hydrothermal method through homogeneous coprecipitation reaction using urea as precipitant with surfactant assembly. Synthetic temperature, surfactant, and calcination temperature have the obvious effect on the formation and photocatalytic activity of ZnGa 2 O 4 . ZnGa 2 O 4 nanoparticles synthesized in the optimal conditions are highly dispersed and uniform with average diameter of 16.2 nm possessing a surface area of 70 m 2 g −1 . Under ultraviolet (UV) light illumination, the ZnGa 2 O 4 nanoparticles show an efficient photocatalytic activity in liquid phase degradation of organic dyes. The decomposition rates of methyl orange and methylene blue over the present ZnGa 2 O 4 nanoparticles are higher than those of commercial P25 (Degussa Co)

Undoped p-type GaN1-xSbx alloys: Effects of annealing

Science.gov (United States)

Segercrantz, N.; Baumgartner, Y.; Ting, M.; Yu, K. M.; Mao, S. S.; Sarney, W. L.; Svensson, S. P.; Walukiewicz, W.

2016-12-01

We report p-type behavior for undoped GaN1-xSbx alloys with x ≥ 0.06 grown by molecular beam epitaxy at low temperatures (≤400 °C). Rapid thermal annealing of the GaN1-xSbx films at temperatures >400 °C is shown to generate hole concentrations greater than 1019 cm-3, an order of magnitude higher than typical p-type GaN achieved by Mg doping. The p-type conductivity is attributed to a large upward shift of the valence band edge resulting from the band anticrossing interaction between localized Sb levels and extended states of the host matrix.

Study on Effect of Type of Explant and Hormone on Callus Induction and Regeneration in Saffron (Crocus sativus L.

Directory of Open Access Journals (Sweden)

Mohsen Sajjadi

2015-10-01

Full Text Available Saffron (Crocus sativus L. is one of the medicinal plants that contain active components and medicinal materials. Tissue culture of saffron can improve the quality and quantity of the saffron product, increase its export and the farmers’ income. In this study, 36 different types of hormone combinations in the dark and 9 different treatments of hormone combinations in cold (4°C, using different saffron explants (bulb, leaf, scales around leaf and distal parts of the leaf were studied in tissue culture. To investigate the growth of corms, the callus formation and the regeneration rate, three replications for each treatment were used and the length of shoot (cm, the callus formation percentage and the regeneration percentage were measured and statistical analysis was performed. Among the types of explants, only explants from bulbs produced the callus on MS medium containing 2 mg.l-1 BAP and 1 mg.l-1 IBA in both the dark and cold conditions. The highest percentage of regeneration was obtained in MS medium with hormonal composition of 0.3 mg.l-1 TDZ, 1 mg.l-1 BAP, 2 mg.l-1 IBA and 0.01 mg.l-1 GA3 in the cold conditions.

In vitro propagation of the Garden Heliotrope, Valeriana officinalis L.: influence of pre-chilling and light on seed germination.

Science.gov (United States)

Bhat, B; Sharma, V D

2015-03-01

Valeriana officinalis is an important medicinal herb commonly found in Kashmir valley. This study forms an important preliminary step for in-vitro micro propagation of V. officinalis from breaking the seed dormancy, inducing rapid seed germination and its subsequent micro propagation. We investigated the influence of pretreatment of V. officinalis seeds with reduced temperature and light on seed germination and in-vitro propagation. Culture of explants from cultivated seeds have demonstrated its potential for in vitro propagation and plantlet regeneration. Individual as well as combinations of treatments such as temperature and light availability influenced the germination of seeds variedly. Unchilled seeds of V. officinalis were given dip in GA3 (200 ppm) for 24, 48 and 120 h. Seeds treated with GA3 for 24 h and kept in darkness showed the best results, i.e. 48%. Seeds pretreated with GA3 for 120 h and incubated in dark showed 40% germination. Pre-chilling up to 72 h and kept in light showed maximum germination of 60% followed by 40% kept in darkness. Pre-chilling for 48 h resulted in 40 and 25% seed germination in light and darkness, respectively. GA3 pre-treatment for 72 h and 24 h pre chilling were most effective in inducing seed germination. Maximum shoot response was obtained on MS enriched with BAP (1 mg/L) + IAA (0.1 mg/L) combinations using shoot tips as explants. Multiple shoot regeneration from shoot apices was recorded on BAP (1 mg/L) and BAP (1 mg/L) + IAA (0.1 mg/L).

Thermodynamics of CoAl2O4-CoGa2O4 solid solutions

International Nuclear Information System (INIS)

Lilova, Kristina I.; Navrotsky, Alexandra; Melot, Brent C.; Seshadri, Ram

2010-01-01

CoAl 2 O 4 , CoGa 2 O 4 , and their solid solution Co(Ga z Al 1-z ) 2 O 4 have been studied using high temperature oxide melt solution calorimetry in molten 2PbO.B 2 O 3 at 973 K. There is an approximately linear correlation between lattice parameters, enthalpy of formation from oxides, and the Ga content. The experimental enthalpy of mixing is zero within experimental error. The cation distribution parameters are calculated using the O'Neill and Navrotsky thermodynamic model. The enthalpies of mixing calculated from these parameters are small and consistent with the calorimetric data. The entropies of mixing are calculated from site occupancies and compared to those for a random mixture of Ga and Al ions on octahedral site with all Co tetrahedral and for a completely random mixture of all cations on both sites. Despite a zero heat of mixing, the solid solution is not ideal in that activities do not obey Raoult's Law because of the more complex entropy of mixing. - Graphical abstract: Measured enthalpies of mixing of CoAl 2 O 4 -CoGa 2 O 4 solid solutions are close to zero but entropies of mixing reflect the complex cation distribution, so the system is not an ideal solution.

Reviews on 1,4-naphthoquinones from Diospyros L.

Science.gov (United States)

Nematollahi, Alireza; Aminimoghadamfarouj, Noushin; Wiart, Christophe

2012-01-01

The genus Diospyros is one of the most important sources of bioactive compounds, exclusively 1,4-naphthoquinones. The following information is an attempt to cover the developments in the biology and phytochemistry of 1,4-naphthoquinones isolated from this genus, as well as the studies done and the suggested mechanisms regarding their activities. During the past 60 years, many of these agents have been isolated from Diospyros L. Twelve considerable bioactive structures are reported in this review. The basic 1,4-naphthoquinone skeletons, on which a large number of studies have been done, are plumbagin and diospyrin. Today, the potential for development of leads from 1,4-naphthoquinones obtained from Diospyros L. is growing dramatically, mainly in the area of anticancer and antibacterial investigations. The data prepared and described here are intended to be served as a reference tool to the natural products and chemistry specialists in order to expand the rational drug design.

Interaction of the D-isomer of 4-methylene glutamate (4-MG) with an active site thiol group of γ-glutamylcysteine synthetase (γ-GCS)

International Nuclear Information System (INIS)

Simondsen, R.P.; Meister, A.

1986-01-01

γ-GCS has an SH-group at or close to the glutamate binding site. During efforts to find a covalently bound inhibitor, the authors examined interaction of the enzyme with 4-MG with the thought that a glutamate analog with an α,β-unsaturated moiety might bind to the glutamate site and react with the active site thiol. 4-MG is not a significant substrate, but inhibits in the usual assay. Preincubation of the enzyme with DL-4-MG inactivated markedly and to about the same extent as found after preincubation with half the concentration of D-4-MG (prepared by action of glutamate decarboxylase on DL-4-MG); L-4-MG did not inactivate. Inactivation by 4-MG was decreased in the presence of L-glutamate. Inactivation by 4-MG was prevented by prior treatment of the enzyme with cystamine, which forms a disulfide with the active site thiol. After inactivation of the enzyme with 4-[2- 14 C]MG followed by separation of the enzyme by gel filtration, 0.9 mole of label was found per mole of enzyme, amino acid analysis after acid hydrolysis of the labeled enzyme gave labeled products that include the expected adduct formed by reaction of cysteine with 4-MG

Fruit development, pigmentation and biochemical properties of wax apple as affected by localized Application of GA3 under field conditions

OpenAIRE

Khandaker, Mohammad Moneruzzaman; Boyce, Amru Nasrulhaq; Osman, Normaniza; Golam, Faruq; Rahman, M. Motior; Sofian-Azirun, M.

2013-01-01

This study investigated the effects of gibberellin (GA3) on the fruit development, pigmentation and biochemical properties of wax apple. The wax apple trees were rubbing treated with 0, 20, 50 and 100 mgGA3/l under field conditions. The localized application (rubbing) of 50 mg GA3/l significantly increased the fruit set, fruit length and diameter, color development, weight and yieldcompared to the control. In addition, GA3 treatments significantly reduced the fruit drop. With regard to the fr...

Synthesis of novel 68Ga-labeled amino acid derivatives for positron emission tomography of cancer cells

International Nuclear Information System (INIS)

Shetty, Dinesh; Jeong, Jae Min; Ju, Chang Hwan; Lee, Yun-Sang; Jeong, Seo Young; Choi, Jae Yeon; Yang, Bo Yeun

2010-01-01

Objectives: We developed amino acid derivatives of 1,4,7,10-tetraazacyclododecane-1,7-diacetic acid (DO2A) and 1,4,7,10-tetraazacyclododecane-1,4,7,-triacetic acid (DO3A) that can be labeled with 68 Ga, and we investigated their basic biological properties. Materials and methods: Alanine derivatives of DO2A and DO3A were synthesized by regiospecific nucleophilic attack of DO2tBu and DO3tBu on the β-position of Boc-L-serine-β-lactone, followed by acid hydrolysis. Also, homoalanine derivatives were synthesized by reacting with the protected bromo derivative of homoalanine, which was synthesized from N-Cbz-L-homoserine lactone. Further catalytic reduction and acid cleavage of protected groups resulted in the required products. All derivatives were labeled with 68 Ga. Cell uptake assays were carried out in Hep3B (human hepatoma) and U87MG (human glioma) cell lines at 37 o C. Positron emission tomography (PET) imaging studies were performed using balb/c mice xenografted with CT-26 (mouse colon cancer). Results: All compounds were labeled with >97% efficiency. According to in vitro studies, the labeled amino acid derivatives showed significantly greater uptakes than the control ( 68 Ga 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraacetic acid) in cancer cells. Small animal PET images for labeled compounds showed high tumor uptake, as well as kidney and bladder uptakes, at 30 min postinjection. 68 Ga-DO3A-homoalanine showed the highest standardized uptake value ratio (3.9±0.3), followed by 68 Ga-DO2A-alanine (3.1±0.2), 68 Ga-DO3A-alanine (2.8±0.2) and 68 Ga-DO2A-homoalanine (2.3±0.2). Conclusion: These derivatives were found to have high labeling efficiencies, high stabilities, high tumor cell uptakes, high tumor/nontumor xenograft uptakes and low nonspecific uptake in normal organs, except for the kidneys. However, the uptake mechanism of these derivatives remains unclear, and uptake via specific amino acid transporters needs to be demonstrated.

Exogenous applications of plant growth regulators influence the reproductive growth of citrus sinensis osbeck cv. blood red

International Nuclear Information System (INIS)

Khan, A.S.; Malik, A.U.; Ahmad, S.; Ahmad, I.

2014-01-01

To study the influence of exogenous applications of plant growth regulators on the reproductive behaviour of low bearing sweet orange (Citrus sinensis Osbeck) trees, three separate experiments were conducted on twelve years old 'Blood Red' Sweet orange trees budded on Rough Lemon (Citrus jambheri L.) root stock. In the first experiment, trees were sprayed with 20 mg L-1 2, 4-D and GA3 alone or in combination at mid bloom (MB) stage, whilst in the second and third experiments 20 mg L-1 2, 4-D and GA3 alone or in combination were sprayed at MB + 6 weeks after MB, and at MB + 22 and 28 weeks after MB stages, respectively. A single tree was selected as an experimental unit and each treatment was replicated four times. Data regarding the flowering intensity, flower drop, fruit set, fruit drop and fruit harvest percentages (%) were collected and analyzed statistically. In all experiments exogenous application of 20 mg L-1 2, 4-D and GA3 alone or in combination to Blood Red sweet orange trees reduced the flower drop % and increased the fruit set % as compared to untreated trees. Application 2, 4-D and GA3 alone or in combination at MB did not affect the fruit drop % and fruit harvest % in contrast to untreated trees. The trees sprayed with 20 mg L-1 GA3 alone or in combination with 2, 4-D at MB + 22 and 28 weeks after MB exhibited highest reduction in the fruit drop % compared to control trees. In conclusions application GA3 (20 mg L-1) alone or in combination of 2, 4-D (20 mg L-1) at MB + 22 and 28 weeks after MB can be used effectively to increase the fruit set and reduce the fruit drop in Blood Red sweet oranges. (author)

Structural and magnetic properties of Mg-Zn ferrites (Mg{sub 1−x}Zn{sub x}Fe{sub 2}O{sub 4}) prepared by sol-gel method

Energy Technology Data Exchange (ETDEWEB)

Reyes-Rodríguez, Pamela Yajaira, E-mail: pamela2244_4@hotmail.com [Cinvestav-Unidad Saltillo, Av. Industrial Metalúrgica #1062, Parque Industrial Saltillo-Ramos Arizpe, CP 25900, México (Mexico); Cortés-Hernández, Dora Alicia; Escobedo-Bocardo, José Concepción; Almanza-Robles, José Manuel; Sánchez-Fuentes, Héctor Javier; Jasso-Terán, Argentina; De León-Prado, Laura Elena [Cinvestav-Unidad Saltillo, Av. Industrial Metalúrgica #1062, Parque Industrial Saltillo-Ramos Arizpe, CP 25900, México (Mexico); Méndez-Nonell, Juan [Centro de Investigación en Materiales Avanzados, Ave. Miguel Cervantes #120, Complejo Industrial Chihuahua, CP 31109 Chihuahua, México (Mexico); Hurtado-López, Gilberto Francisco [Centro de Investigación en Química Aplicada, Blvd. Enrique Reyna Hermosillo #140, CP 25294 Saltillo, Coahuila, México (Mexico)

2017-04-01

In this study, the Mg{sub 1−x}Zn{sub x}Fe{sub 2}O{sub 4} nanoparticles (x=0–0.9) were prepared by sol-gel method. These ferrites exhibit an inverse spinel structure and the lattice parameter increases as the substitution of Zn{sup 2+} ions is increased. At lower Zn content (0.1≤x≤0.5), saturation magnetization (Ms) increases, while it decreases at higher Zn content (x≥6). The remnant magnetization (0.17–2.0 emu/g) and coercive field (6.0–60 Oe) indicate a ferrimagnetic behavior. The average core diameter of selected ferrites is around 15 nm and the nanoparticles morphology is quasi spherical. The heating ability of some Mg{sub 0.9}Zn{sub 0.1}Fe{sub 2}O{sub 4} and Mg{sub 0.7}Zn{sub 0.3}Fe{sub 2}O{sub 4} aqueous suspensions indicates that the magnetic nanoparticles can increase the medium temperature up to 42 °C in a time less than 10 min - Highlights: • Magnetic nanoparticles of Mg{sub 1−x}Zn{sub x}Fe{sub 2}O{sub 4} were synthesized by sol-gel method. • Nanoparticles showing a single spinel crystalline structure were obtained. • Aqueous suspensions of Mg{sub 0.7}Zn{sub 0.3}Fe{sub 2}O{sub 4} and Mg{sub 0.9}Zn{sub 0.1}Fe{sub 2}O{sub 4} show heating ability.

Redução de sementes do tangor 'Murcote' com a aplicação de biorreguladores durante o florescimento Reduction of seeds in 'Honey' orange by application of plant growth regulators during reproductive stages

Directory of Open Access Journals (Sweden)

Marcio Christian Serpa Domingues

2007-06-01

Full Text Available O presente ensaio foi conduzido em cultivo comercial do tangor 'Murcote' e teve por objetivo avaliar a atuação dos biorreguladores 2,4-D (auxina, NAA (auxina, GA3 (giberelina e BA (citocinina, na redução do número de sementes, sem afetar a qualidade dos frutos cítricos. Os tratamentos foram: Testemunha; 10 e 20 mg.L-1 de 2,4-D; 100, 150 e 200 mg.L-1 de NAA, 100 e 200 mg.L-1 de GA3 e 20 e 40 mg.L-1 de BA. Verificou-se que nenhum dos reguladores vegetais influenciou na qualidade dos frutos de tangor 'murcote', sem redução de peso, tamanho e teor de sólidos solúveis totais. Já em relação ao número de sementes, nenhum dos reguladores vegetais foi efetivo na redução de sementes inviáveis, porém mostraram efeito na redução de sementes viáveis, conseqüentemente com redução do número total de sementes nos frutos, quando tratados com NAA a 100 e 200 mg.L-1 juntamente com GA3 a 100 mg.L-1, com redução de 30 % do total de sementes.The present experiment was conducted in a commercial tangor 'Murcote' citrus grove in Pratania, São Paulo State, Brazil and had the objective to evaluate the effects of, 2,4-D (auxin, NAA (auxin, GA3 (gibberellin and BA (cytokinin, on the reduction of seed number, without modifications on citrus fruit quality. The treatments sprayed were as follow: control (water; 10 and 20 mg.L-1 of 2,4-D; 100, 150 and 200 mg.L-1 of NAA; 100 and 200 mg.L-1 of GA3 ; 20 and 40 mg.L-1 of BA. The results showed that none of plant growth regulators influenced fruit quality, without weight reduction, diameter or ºBrix. In relation to seed number, none of the plant growth regulators were effective on reduction of seed number, however the reduced of viable seed number and total seed number of fruits, specially with the treatment of 100 and 200 mg.L-1 of NAA and 100 mg.L-1 of GA3, that showed a reduction of 30% of total seed of tangor murcott fruits.

Optical and electrical improvements of semipolar (1 1 −2 2) GaN-based light emitting diodes by Si doping of n-GaN template

International Nuclear Information System (INIS)

Lee, Jae-Hwan; Han, Sang-Hyun; Song, Ki-Ryong; Lee, Sung-Nam

2014-01-01

Highlights: • In semipolar GaN, Si-doping is effective to reduce out-of plane PSFs toward [1−100]. • Interfacial quality of semipolar QWs was improved by increasing SiH4 flow of n-GaN. • Electrical properties of semipolar GaN were improved by increasing Si doping. • Light output power of semipolar LEDs were increased with SiH4 flow rate of n-type GaN. - Abstract: We report that the performance of semipolar (1 1 −2 2) GaN-based light-emitting diodes (LEDs) was improved by increasing the Si-doping concentration of n-type GaN templates. In-plane and out-of plane high-resolution X-ray diffraction demonstrated that crystal defects such as threading dislocation, partial stacking faults and basal stacking faults, were significantly decreased by increasing the Si-doping concentration. This resulted in the increase of carrier mobility due to reduction of the defect-scattering effect. Furthermore, the quality of InGaN/GaN quantum-well interfaces was improved by increasing the Si-doping concentration of the n-type GaN template. Based on these results, we suggest that the light-output power and operation voltage of semipolar (1 1 −2 2) GaN-based LEDs would be improved by increasing Si doping concentration of n-type GaN templates

Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes

International Nuclear Information System (INIS)

Liu Yang; Yang Yongchun

2016-01-01

The effects of Mg doping in the quantum barriers (QBs) on the efficiency droop of GaN based light emitting diodes (LEDs) were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells (QWs), both may reduce the efficiency droop. However, heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop. (paper)

Local structure investigation of Ga and Yb dopants in Co4Sb12 skutterudites

Science.gov (United States)

Hu, Yanyun; Chen, Ning; Clancy, J. P.; Salvador, James R.; Kim, Chang-Yong; Shi, Xiaoya; Li, Qiang; Kim, Young-June

2017-12-01

We report comprehensive x-ray absorption spectroscopy studies at both the Ga K edge and Yb L2 edge to elucidate the local structure of Ga and Yb dopants in YbxGayCo4Sb12 . Our extended x-ray absorption fine structure (EXAFS) data confirm that Ga atoms occupy two crystallographic sites: one is the 24 g site replacing Sb, and the other is the 2 a site in the off-center void position. We find that the occupancy ratio of these two sites varies significantly as a function of the filling fraction of additional Yb, which exclusively occupies the 2 a on-center site. At low concentrations of Yb, Ga24 g and Ga2 a dopants coexist and they form a charge-compensated compound defect proposed by Qiu et al. [Adv. Funct. Mater. 23, 3194 (2013), 10.1002/adfm.201202571]. The Ga24 g occupancy increases gradually with increasing Yb concentration, and almost all Ga occupies the 24 g site for the highest Yb concentration studied (x =0.4 ). In addition to the local structural evidence provided by our EXAFS data, we also present x-ray absorption near-edge structure (XANES) spectra, which show a small Ga K -edge energy shift as a function of Yb concentration consistent with the change from predominantly Ga2 a to Ga24 g states. Our result suggests that the increased solubility of Yb in Yb-Ga co-doped Co4Sb12 skutterudites is due to the increased Ga24 g electron acceptor, and thus provides an important strategy to optimize the carrier concentration in partially filled skutterudites.

Crystal structure of HgGa{sub 2}Se{sub 4} under compression

Energy Technology Data Exchange (ETDEWEB)

Gomis, Oscar, E-mail: osgohi@fis.upv.es [Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica, MALTA Consolider Team, Universitat Politècnica de València, 46022 València (Spain); Vilaplana, Rosario [Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica, MALTA Consolider Team, Universitat Politècnica de València, 46022 València (Spain); Manjón, Francisco Javier [Instituto de Diseño para la Fabricación y Producción Automatizada, MALTA Consolider Team, Universitat Politècnica de València, 46022 València (Spain); Santamaría-Pérez, David [Departamento de Química Física I, Universidad Complutense de Madrid, MALTA Consolider Team, Avenida Complutense s/n, 28040 Madrid (Spain); Departamento de Física Aplicada-ICMUV, MALTA Consolider Team, Universidad de Valencia, Edificio de Investigación, C/Dr. Moliner 50, Burjassot, 46100 Valencia (Spain); Errandonea, Daniel [Departamento de Física Aplicada-ICMUV, MALTA Consolider Team, Universidad de Valencia, Edificio de Investigación, C/Dr. Moliner 50, Burjassot, 46100 Valencia (Spain); and others

2013-06-01

Highlights: ► Single crystals of HgGa{sub 2}Se{sub 4} with defect-chalcopyrite structure were synthesized. ► HgGa{sub 2}Se{sub 4} exhibits a phase transition to a disordered rock salt structure at 17 GPa. ► HgGa{sub 2}Se{sub 4} undergoes a phase transition below 2.1 GPa to a disordered zinc blende. - Abstract: We report on high-pressure x-ray diffraction measurements up to 17.2 GPa in mercury digallium selenide (HgGa{sub 2}Se{sub 4}). The equation of state and the axial compressibilities for the low-pressure tetragonal phase have been determined and compared to related compounds. HgGa{sub 2}Se{sub 4} exhibits a phase transition on upstroke toward a disordered rock-salt structure beyond 17 GPa, while on downstroke it undergoes a phase transition below 2.1 GPa to a phase that could be assigned to a metastable zinc-blende structure with a total cation-vacancy disorder. Thermal annealing at low- and high-pressure shows that kinetics plays an important role on pressure-driven transitions.

Effect of Thiamine, Ascorbic acid and Gibberellic acid (GA3 on Growth Characteristics, Pigment Content and Reduced Sugars of Petunia

Directory of Open Access Journals (Sweden)

moslem salehi

2017-02-01

Full Text Available Introduction: Bedding plants, especially petunia is important element for urban landscaping and attracted the attention of landscapers. This is due to some properties such as growth habit and color. The petunia (Petunia hybrida L. belongs to Solanaceae family that has annual and perennial varieties. This plant is originally from Argentina, Brazil and Uruguay. Some plant growth regulators such as gibberellic acid (GA3 and vitamins including thiamine and ascorbic acid affect plant growth and development and may extend flowering period. Vitamin C affects cell division and cell growth in plants and is effective on the feeding cycle activity in higher plants and it has an important role in electron transport system. The concentrations of 50 and 100 ppm of vitamin C and thiamine can increase the plant height, leaf number, leaf area, fresh and dry weight, and chemical compounds of the Syngonium plant. The application of 100 mg/l of GA3 significantly increased plant height and the number of leaves of gladiolus. Material and methods: The experiment was arranged in a factorial based on a completely randomized design with five replications. In this research, growth characteristics (lateral branch number, flower number, flower diameter, stem diameter, root length, and lateral branch length and biochemical characteristics (chlorophyll a, chlorophyll b, total chlorophyll, carotenoids, and reducing sugar were measured. After seeding and transplanting the seedling at 6 leaf stage, plants sprayed at 4 various growth stages with following treatments: 1-\tControl 2-\tVitamin C(100 mg/l 3-\tThiamin (100 mg/l 4-\tGibberellic acid (100 mg/l 5-\tVitamin C and Thiamin (The concentration of both 100 mg/l 6-\tVitamin C and Gibberellic acid (The concentration of both 100 mg/l 7-\tThiamin and Gibberellic acid (The concentration of both 100 mg/l 8-\tVitamin C, Thiamin and Gibberellic acid (The concentration of three 100 mg/l Data obtained from the measured parameters

In vitro gibberellin A1 binding in Zea mays L

International Nuclear Information System (INIS)

Keith, B.; Rappaport, L.

1987-01-01

The first and second leaf sheaths of Zea mays L. cv Golden Jubilee were extracted and the extract centrifuged at 100,000g to yield a supernatant or cytosol fraction. Binding of [ 3 H]gibberellin A 1 (GA 1 ) to a soluble macromolecular component present in the cytosol was demonstrated at 4 0 C by Sephadex G-200 chromatography. The binding component was of high molecular weight (HMW) and greater than 500 kilodaltons. The HMW component was shown to be a protein and the 3 H-activity bound to this protein was largely [ 3 H]GA 1 and not a metabolite. Binding was pH sensitive but only a small percentage (20%) appeared to be exchangeable on addition of unlabeled GA 1 . Both biologically active and inactive GAs and non-GAs were able to inhibit GA 1 binding. [ 3 H]GA 1 binding to an intermediate molecular weight (IMW) fraction (40-100 kilodaltons) was also detected, provided cytosol was first desalted using Sephadex G-200 chromatography. Gel filtration studies suggest that the HMW binding component is an aggregate derived from the IMW fraction. The HMW binding fraction can be separated into two components using anion exchange chromatography

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Science.gov (United States)

Okumura, Hironori; Martin, Denis; Grandjean, Nicolas

2016-12-01

Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 1019 cm-3 range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between NA-ND and the specific contact resistivity (ρc). We found that there is an optimum NA-ND value of 5 × 1019 cm-3 for which ρc is as low as 2 × 10-5 Ω cm2. This low ρc is ascribed to hole tunneling through the potential barrier at the NiO/p+-GaN interface, which is well accounted for by the field-emission model.

Mg1-xZnxFe2O4 nanoparticles: Interplay between cation distribution and magnetic properties

Directory of Open Access Journals (Sweden)

S. Raghuvanshi

2018-04-01

Full Text Available Correlation between cationic distribution, magnetic properties of Mg1-xZnxFe2O4 (0.0 ≤ x ≤ 1.0 ferrite is demonstrated, hardly shown in literature. X-ray diffraction (XRD confirms the formation of cubic spinel nano ferrites with grain diameter between 40.8 to 55.4 nm. Energy dispersive spectroscopy (EDS confirms close agreement of Mg/Fe, Zn/Fe molar ratio, presence of all elements (Mg, Zn, Fe, O, formation of estimated ferrite composition. Zn addition (for Mg shows: i linear increase of lattice parameter aexp, accounted for replacement of an ion with higher ionic radius (Zn > Mg; ii presence of higher population of Fe3+ ions on B site, and unusual occurrence of Zn, Mg on A and B site leads to non-equilibrium cation distribution where we observe inverse to mixed structure, and is in contrast to reported literature where inverse to normal transition is reported; iii effect on A-A, A-B, B-B exchange interactions, affecting coercivity Hc, Ms. A new empirical relation is also obtained showing linear relation between saturation magnetization Ms – inversion parameter δ, oxygen parameter u4¯3m. Non-zero Y-K angle (αYK values implies Y-K type magnetic ordering in the studied samples.

Produção do porta-enxerto (Annona squamosa L. com o uso de reguladores vegetais

Directory of Open Access Journals (Sweden)

Ferreira Gisela

2002-01-01

Full Text Available A redução do período de formação do porta-enxerto para qualquer espécie frutífera é desejável sob o ponto de vista da diminuição dos custos de produção para o viveirista. Desta forma, realizou-se o presente trabalho com o objetivo de estudar o efeito de diferentes concentrações de reguladores vegetais no crescimento e desenvolvimento do porta-enxerto Annona squamosa L.. O delineamento experimental utilizado foi o inteiramente casualizado, com sete tratamentos e cinco repetições de 15 plantas. Os tratamentos foram compostos pela pulverização com diferentes concentrações de reguladores vegetais: - Testemunha (sem pulverização; - GA3 (25, 50, 75 mg.L-1; - GA4+7 + fenilmetil-aminopurina (25, 50, 75 mg.L-1. Foram avaliados os seguintes parâmetros: - comprimento do caule (Cc; - número de folhas (Nf; - diâmetro do caule a 20 cm da base das plantas; - massa seca da parte aérea e da parte radicular. Os resultados de Cc demonstram que a aplicação de reguladores vegetais afetou positivamente o crescimento do porta-enxerto, pois ocorreu resposta quadrática e linear, para os tratamentos com GA3 e GA4+7 + fenilmetil-aminopurina, respectivamente. Quanto ao diâmetro do caule, observou-se somente resposta quadrática com a aplicação de GA3, o que também foi verificado no parâmetro massa seca da parte aérea.

Durability testing of the high-capacity GA-4/GA-9 trailer

International Nuclear Information System (INIS)

Zimmer, A.

1993-01-01

General Atomics (GA) is under contract to the US Department of Energy (DOE), Idaho Field Office, to develop two legal-weight truck from-reactor spent-fuel shipping casks with trailers. GA is developing these high capacity transport systems to support the Office of Civilian Radioactive Waste Management's (OCRWM) mission to transport spent fuel from reactors to a permanent disposal site. GA's goal is to maximize the number of fuel assemblies that the transport system can safely carry. The GA-4 Cask is being designed to transport four pressurized-water-reactor (PWR) spent-fuel assemblies, and the GA-9 Cask is being designed to transport nine boiling-water-reactor (BWR) spent-fuel assemblies. The use of these high-capacity transport systems will have a large benefit to-public safety since the number of legal-weight truck shipments will be reduced by at least a factor of four over existing spent-fuel shipping cask systems. Achieving these capacities requires that the weight of each component of the transport system. i.e., cask, trailer and tractor, be minimized. The weight of the trailer is of particular importance. With a high load-to-weight ratio, the durability and reliability of the trailer become significant factors in the success of the transport system. In order to verify that the trailer design will meet the durability and performance requirements to safely transport spent-fuel, GA has planned an extensive testing program. The testing program includes non-destructive examination (NDE) of the trailer welds, operational testing, a static load test, an over-the-road performance test, and a test to verify the durability of the trailer up to its 1,000,000-mile design life. Since a prototype cask will not be available for the testing, GA designed and built a dummy payload that simulates the correct weight distribution and approximates the dynamic response of the prototype cask

The structure and band gap design of high Si doping level Ag1−xGa1−xSixSe2 (x=1/2)

International Nuclear Information System (INIS)

Zhang, Shiyan; Mei, Dajiang; Du, Xin; Lin, Zheshuai; Zhong, Junbo; Wu, Yuandong; Xu, Jingli

2016-01-01

Ag 1−x Ga 1−x Si x Se 2 solutions with high Si doping level (x=1/2) are considered and new compound AgGaSiSe 4 has been synthesized. It crystallizes in space group Aea2 and possesses very long axis of a=63.06(1)Å. The three-dimensional framework in AgGaSiSe 4 is composed of AgSe 3 trigonal planar units, AgSe 4 tetrahedra and MSe 4 (M=Si, Ga) tetrahedra. AgGaSiSe 4 is a congruently melting compound with the melt temperature of 759 °C. The diffuse reflectance measurements reveal the band gap of 2.63 eV in AgGaSiSe 4 and the value is 0.33 eV larger than that of Ag 3 Ga 3 SiSe 8 (2.30 eV). - Graphical abstract: The Ag 1−x Ga 1−x Si x Se 2 with high Si doping level (x=1/2) has been studied and the new compound AgGaSiSe 4 was synthesized for the first time. AgGaSiSe 4 crystallizes in a new structure type in space group Aea2 and adopts a three-dimensional framework consisting of AgSe 3 trigonal planar units, AgSe 4 tetrahedra and MSe 4 (M=Si, Ge) tetrahedra. Display Omitted - Highlights: • Study of Ag 1−x Ga 1−x Si x Se 2 with high Si doping level (x=1/2). • Successful synthesis of new compound named AgGaSiSe 4 . • AgGaSiSe 4 crystallizes in space group Aea2 and adopts a three-dimensional framework. • The energy band gap of AgGaSiSe 4 is enlarged compared with Ag 3 Ga 3 SiSe 8 .

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Energy Technology Data Exchange (ETDEWEB)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China); Zhao, Degang [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083 (China); Zhang, Baolin; Du, Guotong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China)

2016-01-01

Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

Pitavastatin 4 mg Provides Significantly Greater Reduction in Remnant Lipoprotein Cholesterol Compared With Pravastatin 40 mg: Results from the Short-term Phase IV PREVAIL US Trial in Patients With Primary Hyperlipidemia or Mixed Dyslipidemia.

Science.gov (United States)

Miller, P Elliott; Martin, Seth S; Joshi, Parag H; Jones, Steven R; Massaro, Joseph M; D'Agostino, Ralph B; Sponseller, Craig A; Toth, Peter P

2016-03-01

Remnants are partially hydrolyzed, triglyceride-rich lipoproteins that are implicated in atherosclerosis. We assessed the adequacy of pitavastatin 4 mg and pravastatin 40 mg in reducing atherogenic lipid parameters beyond LDL-C, in particular remnant lipoprotein cholesterol (RLP-C). From the Phase IV, multicenter, randomized, double-blind PREVAIL US (A Study of Pitavastatin 4 mg Vs. Pravastatin 40 mg in Patients With Primary Hyperlipidemia or Mixed Dyslipidemia) trial, we examined lipoprotein cholesterol subfractions using Vertical Auto Profile testing and apolipoproteins B and A-I at baseline and 12 weeks. Participants with primary hyperlipidemia or mixed dyslipidemia had LDL-C levels of 130 to 220 mg/dL and triglyceride levels ≤ 400 mg/dL. In this post hoc analysis, changes in lipid parameters were compared by using ANCOVA. Lipoprotein subfraction data were available in 312 patients (pitavastatin, n = 157; pravastatin, n = 155). Pitavastatin promoted a greater reduction in RLP-C than pravastatin (-13.6 [8.7] vs -9.3 [9.5] mg/dL). Furthermore, the pitavastatin group reported greater reductions in both components of RLP-C (both, P < 0.001): intermediate-density lipoprotein cholesterol (-9.5 [6.3] vs -6.4 [6.6] mg/dL) and very low-density lipoprotein cholesterol subfraction 3 (-4.1 [3.5] vs -2.9 [3.8] mg/dL). There were also greater reductions in the major ratios of risk (apolipoprotein B/apolipoprotein A-I and total cholesterol/HDL-C) (both, P < 0.001). There were no significant changes in HDL-C, its subfractions, or natural log lipoprotein(a)-cholesterol. The mean age was 58.8 ± 8.9 years in the pitavastatin group and 57.0 ± 10.2 years in the pravastatin group. Compared with pravastatin 40 mg daily, pitavastatin 4 mg provided superior reductions in atherogenic lipid parameters beyond LDL-C, including RLP-C. Future studies are needed investigate the clinical implications of lowering directly measured RLP-C as the principal target. ClinicalTrials.gov identifier

Synthesis of novel {sup 68}Ga-labeled amino acid derivatives for positron emission tomography of cancer cells

Energy Technology Data Exchange (ETDEWEB)

Shetty, Dinesh [Department of Nuclear Medicine, Institute of Radiation Medicine, Seoul National University College of Medicine, Seoul 110-744 (Korea, Republic of); Cancer Research Institute, Seoul National University College of Medicine, Seoul 110-744 (Korea, Republic of); Department of Radiation Applied Life Science, Seoul National University College of Medicine, Seoul 110-744 (Korea, Republic of); Jeong, Jae Min, E-mail: jmjng@snu.ac.k [Department of Nuclear Medicine, Institute of Radiation Medicine, Seoul National University College of Medicine, Seoul 110-744 (Korea, Republic of); Cancer Research Institute, Seoul National University College of Medicine, Seoul 110-744 (Korea, Republic of); Department of Radiation Applied Life Science, Seoul National University College of Medicine, Seoul 110-744 (Korea, Republic of); Ju, Chang Hwan [Cancer Research Institute, Seoul National University College of Medicine, Seoul 110-744 (Korea, Republic of); Department of Life and Nanopharmaceutical Sciences, Graduate School, Kyung Hee University, Seoul (Korea, Republic of); Lee, Yun-Sang [Department of Nuclear Medicine, Institute of Radiation Medicine, Seoul National University College of Medicine, Seoul 110-744 (Korea, Republic of); Department of Radiation Applied Life Science, Seoul National University College of Medicine, Seoul 110-744 (Korea, Republic of); Jeong, Seo Young [Department of Life and Nanopharmaceutical Sciences, Graduate School, Kyung Hee University, Seoul (Korea, Republic of); Choi, Jae Yeon; Yang, Bo Yeun [Department of Nuclear Medicine, Institute of Radiation Medicine, Seoul National University College of Medicine, Seoul 110-744 (Korea, Republic of); Cancer Research Institute, Seoul National University College of Medicine, Seoul 110-744 (Korea, Republic of); Department of Radiation Applied Life Science, Seoul National University College of Medicine, Seoul 110-744 (Korea, Republic of)

2010-11-15

Objectives: We developed amino acid derivatives of 1,4,7,10-tetraazacyclododecane-1,7-diacetic acid (DO2A) and 1,4,7,10-tetraazacyclododecane-1,4,7,-triacetic acid (DO3A) that can be labeled with {sup 68}Ga, and we investigated their basic biological properties. Materials and methods: Alanine derivatives of DO2A and DO3A were synthesized by regiospecific nucleophilic attack of DO2tBu and DO3tBu on the {beta}-position of Boc-L-serine-{beta}-lactone, followed by acid hydrolysis. Also, homoalanine derivatives were synthesized by reacting with the protected bromo derivative of homoalanine, which was synthesized from N-Cbz-L-homoserine lactone. Further catalytic reduction and acid cleavage of protected groups resulted in the required products. All derivatives were labeled with {sup 68}Ga. Cell uptake assays were carried out in Hep3B (human hepatoma) and U87MG (human glioma) cell lines at 37{sup o}C. Positron emission tomography (PET) imaging studies were performed using balb/c mice xenografted with CT-26 (mouse colon cancer). Results: All compounds were labeled with >97% efficiency. According to in vitro studies, the labeled amino acid derivatives showed significantly greater uptakes than the control ({sup 68}Ga 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraacetic acid) in cancer cells. Small animal PET images for labeled compounds showed high tumor uptake, as well as kidney and bladder uptakes, at 30 min postinjection. {sup 68}Ga-DO3A-homoalanine showed the highest standardized uptake value ratio (3.9{+-}0.3), followed by {sup 68}Ga-DO2A-alanine (3.1{+-}0.2), {sup 68}Ga-DO3A-alanine (2.8{+-}0.2) and {sup 68}Ga-DO2A-homoalanine (2.3{+-}0.2). Conclusion: These derivatives were found to have high labeling efficiencies, high stabilities, high tumor cell uptakes, high tumor/nontumor xenograft uptakes and low nonspecific uptake in normal organs, except for the kidneys. However, the uptake mechanism of these derivatives remains unclear, and uptake via specific amino acid

1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors with f T/f max of 41/125 GHz

Science.gov (United States)

Hou, Bin; Ma, Xiaohua; Yang, Ling; Zhu, Jiejie; Zhu, Qing; Chen, Lixiang; Mi, Minhan; Zhang, Hengshuang; Zhang, Meng; Zhang, Peng; Zhou, Xiaowei; Hao, Yue

2017-07-01

In this paper, a normally-off AlGaN/GaN high-electron-mobility transistors (HEMT) fabricated using inductively coupled plasma (ICP) CF4 plasma recessing and an implantation technique is reported. A gate-to-channel distance of ˜10 nm and an equivalent negative fluorine sheet charge density of -1.21 × 1013 cm-2 extracted using a simple threshold voltage (V th) analytical model result in a high V th of 1.5 V, a peak transconductance of 356 mS/mm, and a subthreshold slope of 133 mV/decade. A small degradation of channel mobility leads to a high RF performance with f T/f max of 41/125 GHz, resulting in a record high f T × L g product of 10.66 GHz·µm among Schottky barrier AlGaN/GaN normally-off HEMTs with V th exceeding 1 V, to the best of our knowledge.

P- and N-type implantation doping of GaN with Ca and O

International Nuclear Information System (INIS)

Zolper, J.C.; Wilson, R.G.; Pearton, S.J.

1996-01-01

III-N photonic devices have made great advances in recent years following the demonstration of doping of GaN p-type with Mg and n-type with Si. However, the deep ionization energy level of Mg in GaN (∼ 160 meV) limits the ionized of acceptors at room temperature to less than 1.0% of the substitutional Mg. With this in mind, the authors used ion implantation to characterize the ionization level of Ca in GaN since Ca had been suggested by Strite to be a shallow acceptor in GaN. Ca-implanted GaN converted from n-to-p type after a 1,100 C activation anneal. Variable temperature Hall measurements give an ionization level at 169 meV. Although this level is equivalent to that of Mg, Ca-implantation may have advantages (shallower projected range and less straggle for a given energy) than Mg for electronic devices. In particular, the authors report the first GaN device using ion implantation doping. This is a GaN junction field effect transistor (JFET) which employed Ca-implantation. A 1.7 microm JFET had a transconductance of 7 mS/mm, a saturation current at 0 V gate bias of 33 mA/mm, a f t of 2.7 GHz, and a f max of 9.4 GHz. O-implantation was also studied and shown to create a shallow donor level (∼ 25 meV) that is similar to Si. SIMS profiles of as-implanted and annealed samples showed no measurable redistribution of either Ca or O in GaN at 1,125 C