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Sample records for mevva metal vapor

  1. Long range implantation by MEVVA metal ion source

    International Nuclear Information System (INIS)

    Zhang Tonghe; Wu Yuguang; Ma Furong; Liang Hong

    2001-01-01

    Metal vapor vacuum arc (MEVVA) source ion implantation is a new technology used for achieving long range ion implantation. It is very important for research and application of the ion beam modification of materials. The results show that the implanted atom diffusion coefficient increases in Mo implanted Al with high ion flux and high dose. The implanted depth is 311.6 times greater than that of the corresponding ion range. The ion species, doses and ion fluxes play an important part in the long-range implantation. Especially, thermal atom chemistry have specific effect on the long-range implantation during high ion flux implantation at transient high target temperature

  2. Synthesis of graphene by MEVVA source ion implantation

    International Nuclear Information System (INIS)

    Ying, J.J.; Xiao, X.H.; Dai, Z.G.; Wu, W.; Li, W.Q.; Mei, F.; Cai, G.X.; Ren, F.; Jiang, C.Z.

    2013-01-01

    Ion implantation provides a new synthesis route for graphene, and few-layered graphene synthesis by ion implantation has been reported. Here we show the synthesis of a single layer of high-quality graphene by Metal Vapor Vacuum Arc (MEVVA) source ion implantation. Polycrystalline nickel and copper thin films are implanted with MEVVA source carbon ions at 40 kV, followed by high-temperature thermal annealing and quenching. A Raman spectrum is applied to probe the quality and thickness of the prepared graphene. A single layer of high-quality graphene is grown on the nickel films, but not on the copper films. The growth mechanisms on the nickel and copper films are explained. MEVVA source ion implantation has been widely applied in industrial applications, demonstrating that this synthesis method can be generalized for industrial production

  3. Studies on the surface modification of TiN coatings using MEVVA ion implantation with selected metallic species

    International Nuclear Information System (INIS)

    Ward, L.P.; Purushotham, K.P.; Manory, R.R.

    2016-01-01

    Highlights: • Reduced surface roughness was observed after ion implantation. • W implantation increased residual stress. • Reduced friction and wear accompanied Mo implantation. • Mo implanted layer was more resistant to breakdown during wear testing. • Ion implantation effects can be complex on various implanting species properties. - Abstract: Improvement in the performance of TiN coatings can be achieved using surface modification techniques such as ion implantation. In the present study, physical vapor deposited (PVD) TiN coatings were implanted with Cr, Zr, Nb, Mo and W using the metal evaporation vacuum arc (MEVVA) technique at a constant nominal dose of 4 × 10 16 ions cm −2 for all species. The samples were characterized before and after implantation, using Rutherford backscattering (RBS), glancing incident angle X-ray diffraction (GIXRD), atomic force microscopy (AFM) and optical microscopy. Friction and wear studies were performed under dry sliding conditions using a pin-on-disc CSEM Tribometer at 1 N load and 450 m sliding distance. A reduction in the grain size and surface roughness was observed after implantation with all five species. Little variation was observed in the residual stress values for all implanted TiN coatings, except for W implanted TiN which showed a pronounced increase in compressive residual stress. Mo-implanted samples showed a lower coefficient of friction and higher resistance to breakdown during the initial stages of testing than as-received samples. Significant reduction in wear rate was observed after implanting with Zr and Mo ions compared with unimplanted TiN. The presence of the Ti 2 N phase was observed with Cr implantation.

  4. Application of MEVVA discharge to material surface modification

    International Nuclear Information System (INIS)

    Gao Yu; Geng Man; Huang Yuming; Gong Xiaorong; Yu Yijun; Tang Deli; Tie Jun

    1996-01-01

    The authors describes some characteristics of the MEVVA discharge, the process of generating a cathode-arc plasma and the advantages of the MEVVA discharge compared with the kind of heating-vaporizing-ionizing source. Some practical parameters and the operating process of the MEVVA ion source as well as a plasma source with MEVVA discharge used in a PSII device are presented. Various plasmas having good-quality and high-performance are obtained with MEVVA discharges and have been widely used in sight-line processing and omnibearing ion implantation for material surface modification

  5. Some novel design features of the LBL metal vapor vacuum arc ion sources

    International Nuclear Information System (INIS)

    MacGill, R.A.; Brown, I.G.; Galvin, J.E.

    1990-01-01

    The family of MEVVA (metal vapor vacuum arc) high current metal ion sources developed at LBL over the past several years has grown to include a number of different source versions with a wide range of some of the design and operational parameters. The MicroMEVVA source is a particularly compact version, about 2 cm diam and 10 cm long, while the MEVVA IV weighs some 30 kG. MEVVAs IV and V incorporate multiple cathode assemblies (16 and 18 separate cathodes, respectively), and the operating cathode can be switched rapidly and without downtime. The new MEVVA V embodiment is quite compact considering its broad beam (10 cm), high voltage (100 kV), and multiple cathode features. The large-area extractor grids used in MEVVA V were fabricated using a particularly simple technique, and they are clamped into position and can thus be changed simply and quickly. The electrical system used to drive the arc is particularly simple and incorporates several attractive features. In this article we review and describe a number of the mechanical and electrical design features that have been developed for these sources

  6. Metal vapor vacuum arc ion sources

    International Nuclear Information System (INIS)

    Brown, I.G.; Dickinson, M.R.; Galvin, J.E.; Godechot, X.; MacGill, R.A.

    1990-06-01

    We have developed a family of metal vapor vacuum are (MEVVA) high current metal ion sources. The sources were initially developed for the production of high current beams of metal ions for heavy ion synchrotron injection for basic nuclear physics research; more recently they have also been used for metal ion implantation. A number of different embodiments of the source have been developed for these specific applications. Presently the sources operate in a pulsed mode, with pulse width of order 1 ms and repetition rate up to 100 pps. Beam extraction voltage is up to 100 kV, and since the ions produced in the vacuum arc plasma are in general multiply ionized the ion energy is up to several hundred keV. Beam current is up to several Amperes peak and around 10 mA time averaged delivered onto target. Nearly all of the solid metals of the Periodic Table have been use to produce beam. A number of novel features have been incorporated into the sources, including multiple cathodes and the ability to switch between up to 18 separate cathode materials simply and quickly, and a broad beam source version as well as miniature versions. here we review the source designs and their performance. 45 refs., 7 figs

  7. Development of a dc, broad beam, Mevva ion source

    International Nuclear Information System (INIS)

    Brown, I.G.; Dickinson, M.R.; Galvin, J.E.; MacGill, R.A.

    1991-09-01

    We are developing an embodiment of metal vapor vacuum arc (Mevva) ion source which will operate dc and have very large area beam. In preliminary testing, a dc titanium ion beam was formed with a current of approximately 0.6 amperes at an extraction voltage of 9kV (about 18 keV ion energy, by virtue of the ion charge state distribution) and using an 18 cm diameter set of multi-aperture. Separately, we have tested and formed beam from a 50 cm diameter (2000 cm 2 ) set of grids using a pulsed plasma gun. This configuration appears to be very efficient in terms of plasma utilization, and we have formed beams with diameter 33 cm (FWHM) and ion current up to 7 amperes at an extraction voltage of 50 kV (about 100 keV mean ion energy) and up to 20 amperes peak at the current overshoot part of the beam pulse. Here we describe this Part Of our Mevva development program and summarize the results obtained to-date

  8. Ion spectra of the metal vapor vacuum arc ion source with compound and alloy cathodes

    Science.gov (United States)

    Sasaki, Jun; Brown, Ian G.

    1990-01-01

    In metal vapor vacuum arc (MEVVA) ion sources, vacuum arc plasma with cathodes of single, pure elements has been utilized for the production of metal ions. In this study, we have investigated the charge state distributions of ions produced in vacuum arc plasmas in a MEVVA ion source for the case when the cathode is an alloy or a compound material. The ion charge state spectra were analyzed by means of a time-of-flight apparatus. We have compared the ion spectra for a cathode of an alloy or a compound material with its constituent elements: TiC/TiN/TiO2/Ti/C, SiC/Si/C, WC/W/C U/UN/(UN-ZrC)/Zr/C, and brass/Zn/Cu. We find that the MEVVA produces ions of all constituent elements in the compound and the alloy cathodes. The charge state distribution of each element differs, however, from the charge state distribution obtained in the vacuum arc with a cathode made of the pure, single constituent element. Fractional values of the total ion numbers of each constituent element in the extracted beam depart from the stoichiometry of the elements in the cathode material. In an operation with a TiC cathode, we irradiated a 304 stainless-steel plate with the extracted beam. Results from glow-discharge spectroscopy (GDS) of the surface show that both titanium and carbon are implanted in the substrate after the irradiation.

  9. Increasing of charge of uranium ion beam in vacuum-arc-type source (MEVVA)

    CERN Document Server

    Kulevoj, T V; Petrenko, S V; Seleznev, D N; Pershin, V I; Batalin, V A; Kolomiets, A A

    2002-01-01

    Research efforts with MEVVA type source (Metal Vapor Vacuum Arc) and with its modifications are in progress now in the ITEP. In the course of research one revealed possibility to increase charge state of generated beam of uranium ions. Increase of charge results from propagation of high-current vacuum-arc charge from the source cathode to the extra anode located in increasing axial magnetic field. One obtained uranium ion beam with 150 mA output current 10% of which were contributed by U sup 7 sup + uranium ions

  10. Review of MEVVA ion source performance for accelerator injection

    International Nuclear Information System (INIS)

    Brown, I.G.; Godechot, X.; Spaedtke, P.; Emig, H.; Rueck, D.M.; Wolf, B.H.

    1991-05-01

    The Mevva (metal vapor vacuum arc) ion source provides high current beams of multiply-charged metal ions suitable for use in heavy ion synchrotrons as well as for metallurgical ion implantation. Pulsed beam currents of up to several amperes can be produced at ion energies of up to several hundred keV. Operation has been demonstrate for 48 metallic ion species: Li, C, Mg, Al, Si, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Pd, Ag, Cd, In, Sn, Ba, La, Ce, Pr, Nd, Sm, Gd, Dy, Ho, Er, Yb, Hf, Ta, W, Ir, Pt, Au, Pb, Bi, Th and U. When the source is operated optimally the rms fractional beam noise can be as low as 7% of the mean beam current; and when properly triggered the source operates reliably and reproducibly for many tens of thousands of pulses without failure. In this paper we review the source performance referred specifically to its use for synchrotron injection. 15 refs., 3 figs

  11. Vapor trap for liquid metal

    Energy Technology Data Exchange (ETDEWEB)

    Watanabe, T

    1968-05-22

    In a pipe system which transfers liquid metal, inert gas (cover gas) is packed above the surface of the liquid metal to prevent oxidization of the liquid. If the metal vapor is contained in such cover gas, the circulating system of the cover gas is blocked due to condensation of liquid metal inside the system. The present invention relates to an improvement in vapor trap to remove the metal vapor from the cover gas. The trap consists of a cylindrical outer body, an inlet nozzle which is deeply inserted inside the outer body and has a number of holes to inject the cove gas into the body, metal mesh or steel wool which covers the exterior of the nozzle and on which the condensation of the metal gas takes place, and a heater wire hich is wound around the nozzle to prevent condensation of the metal vapor at the inner peripheral side of the mesh.

  12. Behavior of PET implanted by Ti, Ag, Si and C ion using MEVVA implantation

    International Nuclear Information System (INIS)

    Wu Yuguang; Zhang Tonghe; Zhang Yanwen; Zhang Huixing; Zhang Xiaoji; Zhou Gu

    2001-01-01

    Polyethylene terephthalane (PET) has been modified with Ti, Ag, Si and C ions from a metal vapor arc source (MEVVA). Ti, Ag, Si and C ions were implanted with acceleration voltage 40 kV to fluences ranging from 1x10 16 to 2x10 17 cm -2 . The surface of implanted PET darkened with increasing ion dose, when the metal ion dose was greater than 1x10 17 cm -2 the color changed to metallic bright. The surface resistance decreases by 5-6 orders of magnitude with increasing dose. The resistivity is stable after long-term storage. The depth of Ti- and Ag-implanted layer is approximately 150 and 80 nm measured by Rutherford backscattering (RBS), respectively. TEM photos revealed the presence of Ti and Ag nano-meter particles on the surface resulting from the high-dose implantation. Ti and Ag ion implantations improved conductivity and wear resistance significantly. The phase and structural changes were obtained by X-ray diffraction (XRD). It can be seen that nano-meter particles of Ti precipitation, TiO 2 and Ti-carbides have been formed in implanted layer. Nano-hardness of implanted PET has been measured by a nano-indenter. The results show that the surface hardness, modulus and wear resistance could be increased

  13. Upgraded vacuum arc ion source for metal ion implantation

    International Nuclear Information System (INIS)

    Nikolaev, A. G.; Oks, E. M.; Savkin, K. P.; Yushkov, G. Yu.; Brown, I. G.

    2012-01-01

    Vacuum arc ion sources have been made and used by a large number of research groups around the world over the past twenty years. The first generation of vacuum arc ion sources (dubbed ''Mevva,'' for metal vapor vacuum arc) was developed at Lawrence Berkeley National Laboratory in the 1980s. This paper considers the design, performance parameters, and some applications of a new modified version of this kind of source which we have called Mevva-V.Ru. The source produces broad beams of metal ions at an extraction voltage of up to 60 kV and a time-averaged ion beam current in the milliampere range. Here, we describe the Mevva-V.Ru vacuum arc ion source that we have developed at Tomsk and summarize its beam characteristics along with some of the applications to which we have put it. We also describe the source performance using compound cathodes.

  14. Risk assessment of metal vapor arcing

    Science.gov (United States)

    Hill, Monika C. (Inventor); Leidecker, Henning W. (Inventor)

    2009-01-01

    A method for assessing metal vapor arcing risk for a component is provided. The method comprises acquiring a current variable value associated with an operation of the component; comparing the current variable value with a threshold value for the variable; evaluating compared variable data to determine the metal vapor arcing risk in the component; and generating a risk assessment status for the component.

  15. Metal Vapor Arcing Risk Assessment Tool

    Science.gov (United States)

    Hill, Monika C.; Leidecker, Henning W.

    2010-01-01

    The Tin Whisker Metal Vapor Arcing Risk Assessment Tool has been designed to evaluate the risk of metal vapor arcing and to help facilitate a decision toward a researched risk disposition. Users can evaluate a system without having to open up the hardware. This process allows for investigating components at risk rather than spending time and money analyzing every component. The tool points to a risk level and provides direction for appropriate action and documentation.

  16. The effect of MEVVA ion implantation on the tribological properties of PVD-TiN films

    International Nuclear Information System (INIS)

    Manory, R.; Mollica, S.

    1998-01-01

    The present work is the first study in which the effects of metal evaporation vacuum (MEVVA) implantation are studied on TiN of the PVD type which is commercially available in Australia. The MEVVA ion implanter differs from the 'conventional' type of ion implanter in the fact that it has a high throughput of metal ions which are not mass analysed and therefore has more potential for industrial non-electronic applications. TiN-coated steel samples have been implanted with two types of species - one light and one heavy - C + and W + respectively. The samples were analysed by Rutherford backscattering (RBS) and x-ray diffraction (XRD). The tribological performance was assessed by pin-on-disc and microhardness. The results show that carbon implantation was very effective in improving the friction coefficient by the formation of a carbonaceous layer on the surface. XRD also shows formation of TiC in the near surface region. W implantation does not improve the friction coefficient but improves the lifetime of the coating. Unimplanted films fail in the pin-on-disk test after 7000 cycles, whereas implanted films are still well adhered after 18000 cycles

  17. Selective metal-vapor deposition on solvent evaporated polymer surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Yamaguchi, Koji; Tsujioka, Tsuyoshi, E-mail: tsujioka@cc.osaka-kyoiku.ac.jp

    2015-12-31

    We report a selective metal-vapor deposition phenomenon based on solvent printing and evaporation on polymer surfaces and propose a method to prepare fine metal patterns using maskless vacuum deposition. Evaporation of the solvent molecules from the surface caused large free volumes between surface polymer chains and resulted in high mobility of the chains, enhancing metal-vapor atom desorption from the surface. This phenomenon was applied to prepare metal patterns on the polymer surface using solvent printing and maskless metal vacuum deposition. Metal patterns with high resolution of micron scale were obtained for various metal species and semiconductor polymer substrates including poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] and poly(3-hexylthiophene-2,5-diyl). - Highlights: • Selective metal-vapor deposition using solvent evaporation on polymer was attained. • Metal patterns with high resolution were obtained for various metal species. • This method can be applied to achieve fine metal-electrodes for polymer electronics.

  18. Implantation of titanium, chromium, yttrium, molybdenum, silver, hafnium, tantalum, tungsten and platinum ions generated by a metal vapor vacuum ion source into 440C stainless steel

    International Nuclear Information System (INIS)

    Sasaki, Jun; Hayashi, Kazunori; Sugiyama, Kenji; Ichiko, Osami; Hashiguchi, Yoshihiro

    1992-01-01

    Titanium, yttrium, molybdenum, silver, chromium, hafnium, tantalum, tungsten and platinum ions generated by a metal vapor vacuum arc (MEVVA) ion source were implanted into 440C stainless steel in the dose region 10 17 ions cm -2 with extraction voltages of up to 70 kV. Glow discharge spectroscopy (GDS), friction coefficient, and Vickers microhardness of the specimens were studied. Grooves made by friction tests were investigated by electron probe microanalysis (EPMA). GDS showed incorporation of carbon in the yttrium, hafnium, tantalum, tungsten and platinum implanted specimens, as well as titanium implanted samples. A large amount of oxygen was observed in the yttrium implanted specimen. The friction coefficient was measured by reciprocating sliding of an unimplanted 440C ball without lubricant at a load of 0.245 N. The friction decreased and achieved a stable state after implantation of titanium, hafnium and tantalum. The friction coefficient of the platinum implanted specimen showed a gradual decrease after several cycles of sliding at high friction coefficient. The yttrium implanted sample exhibited a decreased but slightly unstable friction coefficient. Results from EPMA showed that the implanted elements, which gave decreased friction, remained even after sliding of 200 cycles. Implantation of chromium, molybdenum, silver and tungsten did not provide a decrease in friction and the implants were gone from the wear grooves after the sliding tests. (orig.)

  19. Progress on MEVVA source VARIS at GSI

    Science.gov (United States)

    Adonin, A.; Hollinger, R.

    2018-05-01

    For the last few years, the development of the VARIS (vacuum arc ion source) was concentrated on several aspects. One of them was the production of high current ion beams of heavy metals such as Au, Pb, and Bi. The requested ion charge state for these ion species is 4+. This is quite challenging to produce in vacuum arc driven sources for reasonable beam pulse length (>120 µs) due to the physical properties of these elements. However, the situation can be dramatically improved by using the composite materials or alloys with enhanced physical properties of the cathodes. Another aspect is an increase of the beam brilliance for intense U4+ beams by the optimization of the geometry of the extraction system. A new 7-hole triode extraction system allows an increase of the extraction voltage from 30 kV to 40 kV and also reduces the outer aperture of the extracted ion beam. Thus, a record beam brilliance for the U4+ beam in front of the RFQ (Radio-Frequency Quadrupole) has been achieved, exceeding the RFQ space charge limit for an ion current of 15 mA. Several new projectiles in the middle-heavy region have been successfully developed from VARIS to fulfill the requirements of the future FAIR (Facility for Antiproton and Ion Research) programs. An influence of an auxiliary gas on the production performance of certain ion charge states as well as on operation stability has been investigated. The optimization of the ion source parameters for a maximum production efficiency and highest particle current in front of the RFQ has been performed. The next important aspect of the development will be the increase of the operation repetition rate of VARIS for all elements especially for uranium to 2.7 Hz in order to provide the maximum availability of high current ion beams for future FAIR experiments.

  20. Method for the generation of variable density metal vapors which bypasses the liquidus phase

    Science.gov (United States)

    Kunnmann, Walter; Larese, John Z.

    2001-01-01

    The present invention provides a method for producing a metal vapor that includes the steps of combining a metal and graphite in a vessel to form a mixture; heating the mixture to a first temperature in an argon gas atmosphere to form a metal carbide; maintaining the first temperature for a period of time; heating the metal carbide to a second temperature to form a metal vapor; withdrawing the metal vapor and the argon gas from the vessel; and separating the metal vapor from the argon gas. Metal vapors made using this method can be used to produce uniform powders of the metal oxide that have narrow size distribution and high purity.

  1. Corrosion processes of physical vapor deposition-coated metallic implants.

    Science.gov (United States)

    Antunes, Renato Altobelli; de Oliveira, Mara Cristina Lopes

    2009-01-01

    Protecting metallic implants from the harsh environment of physiological fluids is essential to guaranteeing successful long-term use in a patient's body. Chemical degradation may lead to the failure of an implant device in two different ways. First, metal ions may cause inflammatory reactions in the tissues surrounding the implant and, in extreme cases, these reactions may inflict acute pain on the patient and lead to loosening of the device. Therefore, increasing wear strength is beneficial to the performance of the metallic implant. Second, localized corrosion processes contribute to the nucleation of fatigue cracks, and corrosion fatigue is the main reason for the mechanical failure of metallic implants. Common biomedical alloys such as stainless steel, cobalt-chrome alloys, and titanium alloys are prone to at least one of these problems. Vapor-deposited hard coatings act directly to improve corrosion, wear, and fatigue resistances of metallic materials. The effectiveness of the corrosion protection is strongly related to the structure of the physical vapor deposition layer. The aim of this paper is to present a comprehensive review of the correlation between the structure of physical vapor deposition layers and the corrosion properties of metallic implants.

  2. Molecular Models for DSMC Simulations of Metal Vapor Deposition

    OpenAIRE

    Venkattraman, A; Alexeenko, Alina A

    2010-01-01

    The direct simulation Monte Carlo (DSMC) method is applied here to model the electron‐beam (e‐beam) physical vapor deposition of copper thin films. A suitable molecular model for copper‐copper interactions have been determined based on comparisons with experiments for a 2D slit source. The model for atomic copper vapor is then used in axi‐symmetric DSMC simulations for analysis of a typical e‐beam metal deposition system with a cup crucible. The dimensional and non‐dimensional mass fluxes obt...

  3. Improved method for removing metal vapor from gas streams

    International Nuclear Information System (INIS)

    Ahluwalia, R.K.; Im, K.H.

    1994-01-01

    This invention relates to a process for gas cleanup to remove one or more metallic contaminants present as vapor. More particularly, the invention relates to a gas cleanup process using mass transfer to control the saturation levels such that essentially no particulates are formed, and the vapor condenses on the gas passage surfaces. It addresses the need to cleanup an inert gas contaminated with cadmium which may escape from the electrochemical processing of Integral Fast Reactor (IFR) fuel in a hot cell. The IFR is a complete, self-contained, sodium-cooled, pool-type fast reactor fueled with a metallic alloy of uranium, plutonium and zirconium, and is equipped with a close-coupled fuel cycle. Tests with a model have shown that removal of cadmium from argon gas is in the order of 99.99%. The invention could also apply to the industrial cleanup of air or other gases contaminated with zinc, lead, or mercury. In addition, the invention has application in the cleanup of other gas systems contaminated with metal vapors which may be toxic or unhealthy

  4. The Corrosion Protection of Metals by Ion Vapor Deposited Aluminum

    Science.gov (United States)

    Danford, M. D.

    1993-01-01

    A study of the corrosion protection of substrate metals by ion vapor deposited aluminum (IVD Al) coats has been carried out. Corrosion protection by both anodized and unanodized IVD Al coats has been investigated. Base metals included in the study were 2219-T87 Al, 7075-T6 Al, Titanium-6 Al-4 Vanadium (Ti-6Al-4V), 4130 steel, D6AC steel, and 4340 steel. Results reveal that the anodized IVD Al coats provide excellent corrosion protection, but good protection is also achieved by IVD Al coats that have not been anodized.

  5. Vaporization of tungsten-metal in steam at high temperatures

    International Nuclear Information System (INIS)

    Greene, G.A.; Finfrock, C.C.

    2000-01-01

    The vaporization of tungsten from the APT spallation target dominates the radiological source term for unmitigated target overheating accidents. Chemical reactions of tungsten with steam which persist to tungsten temperatures as low as 800 C result in the formation of a hydrated tungsten-oxide which has a high vapor pressure and is readily convected in a flowing atmosphere. This low-temperature vaporization reaction essentially removes the oxide film that forms on the tungsten-metal surface as soon as it forms, leaving behind a fresh metallic surface for continued oxidation and vaporization. Experiments were conducted to measure the oxidative vaporization rates of tungsten in steam as part of the effort to quantify the MT radiological source term for severe target accidents. Tests were conducted with tungsten rods (1/8 inch diameter, six inches long) heated to temperatures from approximately 700 C to 1350 C in flowing steam which was superheated to 140 C. A total of 19 experiments was conducted. Fifteen tests were conducted by RF induction heating of single tungsten rods held vertical in a quartz glass retort. Four tests were conducted in a vertically-mounted tube furnace for the low temperature range of the test series. The aerosol which was generated and transported downstream from the tungsten rods was collected by passing the discharged steam through a condenser. This procedure insured total collection of the steam along with the aerosol from the vaporization of the rods. The results of these experiments revealed a threshold temperature for tungsten vaporization in steam. For the two tests at the lowest temperatures which were tested, approximately 700 C, the tungsten rods were observed to oxidize without vaporization. The remainder of the tests was conducted over the temperature range of 800 C to 1350 C. In these tests, the rods were found to have lost weight due to vaporization of the tungsten and the missing weight was collected in the downstream condensate

  6. Runaway electron beam control for longitudinally pumped metal vapor lasers

    Science.gov (United States)

    Kolbychev, G. V.; Kolbycheva, P. D.

    1995-08-01

    Physics and techniques for producing of the pulsed runaway electron beams are considered. The main obstacle for increasing electron energies in the beams is revealed to be a self- breakdown of the e-gun's gas-filled diode. Two methods to suppress the self-breakdown and enhance the volumetric discharge producing the e-beam are offered and examined. Each of them provides 1.5 fold increase of the ceiling potential on the gun. The methods also give the ways to control several guns simultaneously. Resulting in the possibility of realizing the powerful longitudinal pumping of metal-vapor lasers on self-terminated transitions of atoms or ions.

  7. Chemical vapor deposition of refractory metals and ceramics III

    International Nuclear Information System (INIS)

    Gallois, B.M.; Lee, W.Y.; Pickering, M.A.

    1995-01-01

    The papers contained in this volume were originally presented at Symposium K on Chemical Vapor Deposition of Refractory Metals and Ceramics III, held at the Fall Meeting of the Materials Research Society in Boston, Massachusetts, on November 28--30, 1994. This symposium was sponsored by Morton International Inc., Advanced Materials, and by The Department of Energy-Oak Ridge National Laboratory. The purpose of this symposium was to exchange scientific information on the chemical vapor deposition (CVD) of metallic and ceramic materials. CVD technology is receiving much interest in the scientific community, in particular, to synthesize new materials with tailored chemical composition and physical properties that offer multiple functionality. Multiphase or multilayered films, functionally graded materials (FGMs), ''smart'' material structures and nanocomposites are some examples of new classes of materials being produced via CVD. As rapid progress is being made in many interdisciplinary research areas, this symposium is intended to provide a forum for reporting new scientific results and addressing technological issues relevant to CVD materials and processes. Thirty four papers have been processed separately for inclusion on the data base

  8. Experimental and theoretical studies of metal vapor atoms

    International Nuclear Information System (INIS)

    Whitfield, S.B.; Wehlitz, Ralf; Martins, Michael

    2004-01-01

    Employing electron spectrometry in conjunction with tuneable synchrotron radiation, we will present a detailed examination of the photoionization dynamics of selected metal vapor atoms. In particular, this paper will focus on the relative partial cross sections of the atomic Li K-shell main and satellite (ionization with excitation) photoelectron lines in the region of the strong 1snln'l' autoionizing transitions, the atomic Sc 3d, 4s main and satellite photoelectron lines in the region of the 3p→3d giant resonance, and also the atomic Fe 3d, 4s main and satellite photoelectron lines in the same resonance region. Our experimental data for Sc and Fe will be compared to our state-of-the-art calculations based on the superposition of configuration method developed by Cowan (The Theory of Atomic Structure and Spectra. University of California Berkeley Press, Berkeley and Los Angeles, 1981). Our partial cross section measurements for Li and Sc will be complemented with measurements of the angular distribution parameter, β. In addition, our Li data will also be compared with recent R-matrix calculations (Phys. Rev. 57 (1998) 1045). In the case of Fe, we will also address the term dependent behavior of the partial cross sections on resonance. These results will highlight what can be achieved with today's technology and point the way towards future endeavors in the study of the photoionization dynamics of open-shell metal vapor atoms

  9. Vapor phase coatings of metals and organics for laser fusion target applications

    International Nuclear Information System (INIS)

    Simonsic, G.A.; Powell, B.W.

    Techniques for applying a variety of metal and organic coatings to 50- to 500 μm diameter glass micro-balloons are discussed. Coating thicknesses vary from 1- to 10 μm. Physical vapor deposition (PVD), chemical vapor deposition (CVD), and electrolytic and electroless plating are some of the techniques being evaluated for metal deposition. PVD and glow discharge polymerization are being used for the application of organic coatings. (U.S.)

  10. Chemically assisted release of transition metals in graphite vaporizers for atomic spectrometry

    International Nuclear Information System (INIS)

    Katskov, Dmitri; Darangwa, Nicholas; Grotti, Marco

    2006-01-01

    The processes associated with the vaporization of microgram samples and modifiers in a graphite tube ET AAS were investigated by the example of transition metals. The vapor absorption spectra and vaporization behavior of μg-amounts Cd, Zn, Cu, Ag, Au, Ni, Co, Fe, Mn and Cr were studied using the UV spectrometer with CCD detector, coupled with a continuum radiation source. The pyrocoated, Ta or W lined tubes, with Ar or He as internal gases, and filter furnace were employed in the comparative experiments. It was found that the kinetics of atomic vapor release changed depending on the specific metal-substrate-gas combination; fast vaporization at the beginning was followed by slower 'tailing.' The absorption continuum, overlapped by black body radiation at longer wavelengths, accompanied the fast vaporization mode for all metals, except Cd and Zn. The highest intensity of the continuum was observed in the pyrocoated tube with Ar. For Cu and Ag the molecular bands overlapped the absorption continuum; the continuum and bands were suppressed in the filter furnace. It is concluded that the exothermal interaction of sample vapor with the material of the tube causes the energy evolution in the gas phase. The emitted heat is dispersed near the tube wall in the protective gas and partially transferred back to the surface of the sample, thus facilitating the vaporization. The increased vapor flow causes over-saturation and gas-phase condensation in the absorption volume at some distance from the wall, where the gas temperature is not affected by the reaction. The condensation is accompanied by the release of phase transition energy via black body radiation and atomic emission. The particles of condensate and molecular clusters cause the scattering of light and molecular absorption; slow decomposition of the products of the sample vapor-substrate reaction produces the 'tailing' of atomic absorption signal. The interaction of graphite with metal vapor or oxygen, formed in the

  11. Formation of microbeads during vapor explosions of Field's metal in water

    KAUST Repository

    Kouraytem, Nadia; Li, Erqiang; Thoroddsen, Sigurdur T

    2016-01-01

    We use high-speed video imaging to investigate vapor explosions during the impact of a molten Field's metal drop onto a pool of water. These explosions occur for temperatures above the Leidenfrost temperature and are observed to occur in up to three stages as the metal temperature is increased, with each explosion being more powerful that the preceding one. The Field's metal drop breaks up into numerous microbeads with an exponential size distribution, in contrast to tin droplets where the vapor explosion deforms the metal to form porous solid structures. We compare the characteristic bead size to the wavelength of the fastest growing mode of the Rayleigh-Taylor instability.

  12. Heavy metal vaporization and abatement during thermal treatment of modified wastes

    International Nuclear Information System (INIS)

    Rio, S.; Verwilghen, C.; Ramaroson, J.; Nzihou, A.; Sharrock, P.

    2007-01-01

    This study examines the vaporization percentage and partitioning of heavy metals Cd, Pb and Zn during thermal treatment of wastes with added PVC, heavy metals or phosphate, and the efficiency of sorbents for removal of these metallic compounds in flue gas of an industrial solid waste incinerator. Firstly, vaporization experiments were carried out to determine the behavior of heavy metals during combustion under various conditions (type of waste, temperature, presence of chloride or phosphate ...). The experimental results show relatively high vaporization percentage of metallic compounds within fly ash and limestone matrix while heavy metals within sediments treated with phosphoric acid are less volatile. Vaporization of metals increases with increasing temperature and with chloride addition. The thermal behavior of the selected heavy metals and their removal by sorbents (sodium bicarbonate, activated carbon) was also studied in an industrial solid waste incinerator. These pilot scale experiments confirm that heavy metals are concentrated in fly ashes and cyclone residues, thus effectively controlling their release to the atmosphere

  13. Mechanical properties of vapor-deposited thin metallic films: a status report

    International Nuclear Information System (INIS)

    Adler, P.H.

    1982-01-01

    The mechanical properties of vapor-deposited thin metallic films are being studied in conjunction with the target fabrication group associated with the laser-fusion energy program. The purpose of the work is to gain an understanding as to which metals are structurally best suited to contain a glass microsphere filled with deuterium-tritium (D-T) gas at large internal pressures

  14. Mevva ion source operated in purely gaseous mode

    International Nuclear Information System (INIS)

    Yushkov, G.Y.; MacGill, R.A.; Brown, I. G.

    2003-01-01

    We have operated a vacuum arc ion source in such a way as to form beams of purely gaseous ions. The vacuum arc configuration that is conventionally used to produce intense beams of metal ions was altered so as to form gaseous ion beams, with only minimal changes to the external circuitry and no changes at all internally to the ion source. In our experiments we formed beams from oxygen (O + and O 2 + ), nitrogen (N + and N 2 + ), argon (Ar + ) and carbon dioxide (C + , CO 2 + , O + and O 2 + ) at extraction voltage of 2 to 50 kV. We used a pulsed mode of operation, with beam pulses approximately 50 milliseconds long and repetition rate 10 pulses per second, for a duty cycle of about 50%. Downstream ion beam current as measured by a 5 cm diameter Faraday cup was typically 0.5 mA pulse or about 250 (micro)A time averaged. This time averaged beam current is very similar to that obtained for metal ions when the source is operated in the usual vacuum arc mode. Here we describe the modifications made to the source and the results of our investigations

  15. On-chip fabrication of alkali-metal vapor cells utilizing an alkali-metal source tablet

    International Nuclear Information System (INIS)

    Tsujimoto, K; Hirai, Y; Sugano, K; Tsuchiya, T; Tabata, O; Ban, K; Mizutani, N

    2013-01-01

    We describe a novel on-chip microfabrication technique for the alkali-metal vapor cell of an optically pumped atomic magnetometer (OPAM), utilizing an alkali-metal source tablet (AMST). The newly proposed AMST is a millimeter-sized piece of porous alumina whose considerable surface area holds deposited alkali-metal chloride (KCl) and barium azide (BaN 6 ), source materials that effectively produce alkali-metal vapor at less than 400 °C. Our experiments indicated that the most effective pore size of the AMST is between 60 and 170 µm. The thickness of an insulating glass spacer holding the AMST was designed to confine generated alkali metal to the interior of the vapor cell during its production, and an integrated silicon heater was designed to seal the device using a glass frit, melted at an optimum temperature range of 460–490 °C that was determined by finite element method thermal simulation. The proposed design and AMST were used to successfully fabricate a K cell that was then operated as an OPAM with a measured sensitivity of 50 pT. These results demonstrate that the proposed concept for on-chip microfabrication of alkali-metal vapor cells may lead to effective replacement of conventional glassworking approaches. (paper)

  16. Metal halides vapor lasers with inner reactor and small active volume.

    Science.gov (United States)

    Shiyanov, D. V.; Sukhanov, V. B.; Evtushenko, G. S.

    2018-04-01

    Investigation of the energy characteristics of copper, manganese, lead halide vapor lasers with inner reactor and small active volume 90 cm3 was made. The optimal operating pulse repetition rates, temperatures, and buffer gas pressure for gas discharge tubes with internal and external electrodes are determined. Under identical pump conditions, such systems are not inferior in their characteristics to standard metal halide vapor lasers. It is shown that the use of a zeolite halogen generator provides lifetime laser operation.

  17. Half-sandwich cobalt complexes in the metal-organic chemical vapor deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Georgi, Colin [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany); Hapke, Marko; Thiel, Indre [Leibniz-Institut für Katalyse e.V. an der Universität Rostock (LIKAT), Albert-Einstein-Straße 29a, Rostock 18059 (Germany); Hildebrandt, Alexander [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany); Waechtler, Thomas; Schulz, Stefan E. [Fraunhofer Institute of Electronic Nano Systems (ENAS), Technologie-Campus 3, Chemnitz 09126 (Germany); Technische Universität Chemnitz, Center for Microtechnologies (ZfM), Chemnitz 09107 (Germany); Lang, Heinrich, E-mail: heinrich.lang@chemie.tu-chemnitz.de [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany)

    2015-03-02

    A series of cobalt half-sandwich complexes of type [Co(η{sup 5}-C{sub 5}H{sub 5})(L)(L′)] (1: L, L′ = 1,5-hexadiene; 2: L = P(OEt){sub 3}, L′ = H{sub 2}C=CHSiMe{sub 3}; 3: L = L′ = P(OEt){sub 3}) has been studied regarding their physical properties such as the vapor pressure, decomposition temperature and applicability within the metal-organic chemical vapor deposition (MOCVD) process, with a focus of the influence of the phosphite ligands. It could be shown that an increasing number of P(OEt){sub 3} ligands increases the vapor pressure and thermal stability of the respective organometallic compound. Complex 3 appeared to be a promising MOCVD precursor with a high vapor pressure and hence was deposited onto Si/SiO{sub 2} (100 nm) substrates. The resulting reflective layer is closed, dense and homogeneous, with a slightly granulated surface morphology. X-ray photoelectron spectroscopy (XPS) studies demonstrated the formation of metallic cobalt, cobalt phosphate, cobalt oxide and cobalt carbide. - Highlights: • Thermal studies and vapor pressure measurements of cobalt half-sandwich complexes was carried out. • Chemical vapor deposition with cobalt half-sandwich complexes is reported. • The use of Co-phosphites results in significant phosphorous-doped metallic layers.

  18. Electrospray droplet exposure to organic vapors: metal ion removal from proteins and protein complexes.

    Science.gov (United States)

    DeMuth, J Corinne; McLuckey, Scott A

    2015-01-20

    The exposure of aqueous nanoelectrospray droplets to various organic vapors can dramatically reduce sodium adduction on protein ions in positive ion mass spectra. Volatile alcohols, such as methanol, ethanol, and isopropanol lead to a significant reduction in sodium ion adduction but are not as effective as acetonitrile, acetone, and ethyl acetate. Organic vapor exposure in the negative ion mode, on the other hand, has essentially no effect on alkali ion adduction. Evidence is presented to suggest that the mechanism by which organic vapor exposure reduces alkali ion adduction in the positive mode involves the depletion of alkali metal ions via ion evaporation of metal ions solvated with organic molecules. The early generation of metal/organic cluster ions during the droplet desolvation process results in fewer metal ions available to condense on the protein ions formed via the charged residue mechanism. These effects are demonstrated with holomyoglobin ions to illustrate that the metal ion reduction takes place without detectable protein denaturation, which might be revealed by heme loss or an increase in charge state distribution. No evidence is observed for denaturation with exposure to any of the organic vapors evaluated in this work.

  19. Formation of microbeads during vapor explosions of Field's metal in water

    KAUST Repository

    Kouraytem, Nadia

    2016-06-17

    We use high-speed video imaging to investigate vapor explosions during the impact of a molten Field\\'s metal drop onto a pool of water. These explosions occur for temperatures above the Leidenfrost temperature and are observed to occur in up to three stages as the metal temperature is increased, with each explosion being more powerful that the preceding one. The Field\\'s metal drop breaks up into numerous microbeads with an exponential size distribution, in contrast to tin droplets where the vapor explosion deforms the metal to form porous solid structures. We compare the characteristic bead size to the wavelength of the fastest growing mode of the Rayleigh-Taylor instability.

  20. Application of Discharges in Vapor of Evaporated Metals for the Film Deposition from the Ionized Stream

    International Nuclear Information System (INIS)

    Kostin, E.G.

    2006-01-01

    results of researches of the discharge device for ionization of the vapor of solid materials are presented. Evaporation of a material was made by an electron gun with a deviation of a beam on 180 degree. Diode type discharge device for ionization was placed above a surface of evaporated metal and was in a longitudinal adjustable magnetic field. Discharge was carried out in crossed electric and magnetic fields. Partial ionization of the vapor was made by primary and secondary electrons of the gun in a vapor cloud above evaporated substance. Physical properties and structure of the films. The comparative analysis of the films properties, besieged in conditions of influence of bombardment by ions of evaporated metal were studied depending on energy and the contents of ions in a stream of particles on a substrate

  1. High index of refraction films for dielectric mirrors prepared by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Brusasco, R.M.

    1989-01-01

    A wide variety of metal oxides with high index of refraction can be prepared by Metal-Organic Chemical Vapor Deposition. We present some recent optical and laser damage results on oxide films prepared by MOCVD which could be used in a multilayer structure for highly reflecting (HR) dielectric mirror applications. The method of preparation affects both optical properties and laser damage threshold. 10 refs., 8 figs., 4 tabs

  2. Metal vapor micro-jet controls material redistribution in laser powder bed fusion additive manufacturing

    OpenAIRE

    Ly, Sonny; Rubenchik, Alexander M.; Khairallah, Saad A.; Guss, Gabe; Matthews, Manyalibo J.

    2017-01-01

    The results of detailed experiments and finite element modeling of metal micro-droplet motion associated with metal additive manufacturing (AM) processes are presented. Ultra high speed imaging of melt pool dynamics reveals that the dominant mechanism leading to micro-droplet ejection in a laser powder bed fusion AM is not from laser induced recoil pressure as is widely believed and found in laser welding processes, but rather from vapor driven entrainment of micro-particles by an ambient gas...

  3. The theory of temporal compression of intense pulses in a metal vapor

    Energy Technology Data Exchange (ETDEWEB)

    Shaw, M.J.; Crane, J.K.

    1990-11-16

    We examine compression of near-resonant pulses in metal vapor in the nonlinear regime. Our calculations examine nonlinear effects on compression of optimally-chirped pulses of various fluences. In addition, we compare model predictions with experimental results for compression of 4 nsec Nd:YAG pumped dye pulses.

  4. Charge transfer between hydrogen(deuterium) ions and atoms in metal vapors

    International Nuclear Information System (INIS)

    Alvarez T, I.; Cisneros G, C.

    1981-01-01

    The current state of the experiments on charge transfer between hydrogen (deuterium) ions and atoms in metal vapors are given. Emphasis is given to describing different experimental techniques. The results of calculations if available, are compared with existing experimental data. (author)

  5. Electric conductivity of alkali metal vapors in the region of critical point

    International Nuclear Information System (INIS)

    Likal'ter, A.A.

    1982-01-01

    A behaviour of alkali metal conductivity in the vicinity of a critical point has been analyzed on the base of deVeloped representations on a vapor state. A phenomenological conductivity theory has been developed, which is in a good agreement with experimental data obtained

  6. Scoping studies of vapor behavior during a severe accident in a metal-fueled reactor

    International Nuclear Information System (INIS)

    Spencer, B.W.; Marchaterre, J.F.

    1985-01-01

    Scoping calculations have been performed examining the consequences of fuel melting and pin failures for a reactivity-insertion type accident in a sodium-cooled, pool-type reactor fueled with a metal alloy fuel. The principal gas and vapor species released are shown to be Xe, Cs,and bond sodium contained within the fuel porosity. Fuel vapor pressure is insignificant, and there is no energetic fuel-coolant interaction for the conditions considered. Condensation of sodium vapor as it expands into the upper sodium pool in a jet mixing regime may occur as rapidly as the vapor emerges from the disrupted core (although reactor-material experiments are needed to confirm these high condensation rates). If the predictions of rapid direct-contact condensation can be verified experimentally for the sodium system, the implication is that the ability of vapor expansion to perform appreciable work on the system is largely eliminated. Furthermore, the ability of an expanding vapor bubble to transport fuel and fission product species to the cover gas region where they may be released to the containment is also largely eliminated. The radionuclide species except for fission gas are largely retained within the core and sodium pool

  7. Recovery of Platinum Group Metals from Spent Catalysts Using Iron Chloride Vapor Treatment

    Science.gov (United States)

    Taninouchi, Yu-ki; Okabe, Toru H.

    2018-05-01

    The recovery of platinum group metals (PGMs) from spent automobile catalysts is a difficult process because of their relatively low contents in the scrap. In this study, to improve the efficiency of the existing recycling techniques, a novel physical concentration method involving treatment with FeCl2 vapor has been examined. The reactions occurring between typical catalyst components and FeCl2 vapor are discussed from the thermodynamic point of view, and the validity of the proposed technique was experimentally verified. The obtained results indicate that the vapor treatment at around 1200 K (927 °C) can effectively alloy PGMs (Pt, Pd, and Rh) with Fe, resulting in the formation of a ferromagnetic alloy. It was also confirmed that cordierite and alumina (the major catalyst components) remained unreacted after the vapor treatment, while ceria species were converted into oxychlorides. The samples simulating the automobile catalyst were also subjected to magnetic separation after the treatment with FeCl2 vapor; as a result, PGMs were successfully extracted and concentrated in the form of a magnetic powder. Thus, the FeCl2 vapor treatment followed by magnetic separation can be utilized for recovering PGMs directly from spent catalysts as an effective pretreatment for the currently used recycling methods.

  8. Formation of amorphous metal alloys by chemical vapor deposition

    Science.gov (United States)

    Mullendore, A.W.

    1988-03-18

    Amorphous alloys are deposited by a process of thermal dissociation of mixtures of organometallic compounds and metalloid hydrides,e.g., transition metal carbonyl, such as nickel carbonyl and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit. 1 fig.

  9. Catalytic activation of molecular hydrogen in alkyne hydrogenation reactions by lanthanide metal vapor reaction products

    International Nuclear Information System (INIS)

    Evans, W.J.; Bloom, I.; Engerer, S.C.

    1983-01-01

    A rotary metal vapor was used in the synthesis of Lu, Er, Nd, Sm, Yb, and La alkyne, diene, and phosphine complexes. A typical catalytic hydrogenation experiment is described. The lanthanide metal vapor product is dissolved in tetrahydrofuran or toluene and placed in a pressure reaction vessel 3-hexyne (or another substrate) is added, the chamber attached to a high vacuum line, cooled to -196 0 C, evacuated, warmed to ambient temperature and hydrogen is added. The solution is stirred magnetically while the pressure in monitored. The reaction products were analyzed by gas chromatography. Rates and products of various systems are listed. This preliminary survey indicates that catalytic reaction chemistry is available to these metals in a wide range of coordination environments. Attempts to characterize these compounds are hampered by their paramagnetic nature and their tendency to polymerize

  10. Thomson scattering diagnostics of steady state and pulsed welding processes without and with metal vapor

    International Nuclear Information System (INIS)

    Kühn-Kauffeldt, M; Schein, J; Marqués, J-L

    2015-01-01

    Thomson scattering is applied to measure temperature and density of electrons in the arc plasma of the direct current gas tungsten arc welding (GTAW) process and pulsed gas metal arc welding (GMAW) process. This diagnostic technique allows to determine these plasma parameters independent from the gas composition and heavy particles temperature. The experimental setup is adapted to perform measurements on stationary as well as transient processes. Spatial and temporal electron temperature and density profiles of a pure argon arc in the case of the GTAW process and argon arc with the presence of aluminum metal vapor in the case of the GMAW process were obtained. Additionally the data is used to estimate the concentration of the metal vapor in the GMAW plasma. (fast track communication)

  11. A low aspect ratio electrothermal gun for metal plasma vapor discharge and ceramic nanopowder production

    International Nuclear Information System (INIS)

    Kim, Kyoung Jin; Peterson, Dennis R.

    2008-01-01

    Traditionally, the electrothermal gun design has the bore of a large aspect ratio: however, a low aspect ratio design with a shorter bore length has been employed for efficient production of metal plasma vapors and synthesis of nanomaterials. In a comparison of the arc resistance-current relationship, a low aspect ratio design is found to exhibit distinctively different characteristics compared to a high aspect ratio design, and this trend is explained by the scaling law of plasma properties including theory of plasma electrical conductivity. A one-dimensional isothermal model has been applied to the present experiments to confirm the scaling laws, and it was found that the present modification of the electrothermal gun is able to produce fully ionized metal plasma vapor, while the plasma vapor produced in a conventional design is partially ionized. Also, by reacting metal plasma vapors with the controlled gases in the reaction chamber, nanoscale materials such as aluminum oxide, aluminum nitride, and titanium oxide were synthesized successfully

  12. Using laser absorption spectroscopy to monitor composition and physical properties of metal vapors

    International Nuclear Information System (INIS)

    Berzins, L.V.

    1993-01-01

    The Atomic Vapor Laser Isotope Separation (AVLIS) program has been using laser absorption spectroscopy to monitor vapor densities for over 15 years. Laser absorption spectroscopy has proven itself to be an accurate and reliable method to monitor both density and composition. During this time the diagnostic has moved from a research tool toward a robust component of a process control system. The hardware used for this diagnostic is discussed elsewhere at this symposium. This paper describes how the laser absorption spectroscopy diagnostic is used as a component of a process control system as well as supplying detailed measurements on vapor densities, composition, flow velocity, internal and kinetic temperatures, and constituent distributions. Examples will be drawn from the uranium AVLIS program. In addition potential applications such as composition control in the production of metal matrix composites or aircraft alloys will be discussed

  13. Modeling film uniformity and symmetry in ionized metal physical vapor deposition with cylindrical targets

    International Nuclear Information System (INIS)

    Lu Junqing; Yang Lin; Yoon, Jae Hong; Cho, Tong Yul; Tao Guoqing

    2008-01-01

    Severe asymmetry of the metal deposits on the trench sidewalls occurs near the wafer edge during low pressure ionized metal physical vapor deposition of Cu seed layer for microprocessor interconnects. To investigate this process and mitigate the asymmetry, an analytical view factor model based on the analogy between metal sputtering and diffuse thermal radiation was constructed to investigate deposition uniformity and symmetry for cylindrical target sputtering in low pressure (below 0.1 Pa) ionized Cu physical vapor deposition. The model predictions indicate that as the distance from the cylindrical target to wafer increases, the metal film thickness becomes more uniform across the wafer and the asymmetry of the metal deposits at the wafer edge increases significantly. These trends are similar to those for planar targets. To minimize the asymmetry, the height of the cylindrical target should be kept at a minimum. For cylindrical targets, the outward-facing sidewall of the trench could receive more direct Cu fluxes than the inward-facing one when the target to wafer distance is short. The predictions also indicate that increasing the diameter of the cylindrical target could significantly reduce the asymmetry in metal deposits at the wafer edge and make the film thickness more uniform across the wafer

  14. Structure of metal β-diketonates and their enthalpies of vaporization

    International Nuclear Information System (INIS)

    Domrachev, G.A.; Sevast'yanov, V.G.; Zakharov, L.N.; Krasnodubskaya, S.V.; AN SSSR, Moscow. Inst. Obshchej i Neorganicheskoj Khimii)

    1987-01-01

    Using the method of additive schemes in combinaion with the structural estimation of the degree of screening of the central atom and other elements of β-diketonate molecule while analyzing the experimental enthalpies of vaporization, the contributions of separate fragments of complexes into the enthalpy of vaporization are found. It is shown that energies of intermolecular interaction in a condensed phase of monomeric metal β-diketonates with identical substituents do not depend on the central atom type. The enthalpies of dimer dissociation in a series of rare earth dipivaloylmethanates calculated. The proposed approach is advisable fo selecting forms of metal β-diketonates, the most suitable for the purposes of deep purificaion, which are characterized by maximum chemical and physico-chemical selectivity with respect to impurities, chemical inertness to equipment material, container, etc

  15. Theoretical study of adsorption of water vapor on surface of metallic uranium

    CERN Document Server

    Xiong Bi Tao; Xue Wei Dong; Zhu Zheng He; Jiang Gang; Wang Hong Yan; Gao Tao

    2002-01-01

    According to the experimental data, there is an intermediate substance that formed in the initial stage of oxidation reaction when water vapor is absorbed onto the metallic uranium. The minimum energy of UOH sub 2 witch C sub 2 subupsilon configuration is obtained in the state of sup 5 A sub 1 by B3LYP method of the density function theory (DFT), which is consistent with that by statics of atoms and molecules reaction (AMRS) and group theory. The results from calculations indicate that the adsorption of water vapor on the metallic uranium is an exothermic reaction and that the adsorbed amount decreases with the elevated temperatures. The adsorptive heat at 1 atm is -205.4747 kJ centre dot mol sup - sup 1 , which indicates a typical chemical adsorption

  16. Problems of hydrogen - water vapor - inert gas mixture use in heavy liquid metal coolant technology

    International Nuclear Information System (INIS)

    Ul'yanov, V.V.; Martynov, P.N.; Gulevskij, V.A.; Teplyakov, Yu.A.; Fomin, A.S.

    2014-01-01

    The reasons of slag deposit formation in circulation circuits with heavy liquid metal coolants, which can cause reactor core blockage, are considered. To prevent formation of deposits hydrogen purification of coolant and surfaces of circulation circuit is used. It consists in introduction of gaseous mixtures hydrogen - water vapor - rare gas (argon or helium) directly into coolant flow. The principle scheme of hydrogen purification and the processes occurring during it are under consideration. Measures which make it completely impossible to overlap of the flow cross section of reactor core, steam generators, pumps and other equipment by lead oxides in reactor facilities with heavy liquid metal coolants are listed [ru

  17. Saturated vapor pressure over molten mixtures of GaCl3 and alkali metal chlorides

    International Nuclear Information System (INIS)

    Salyulev, A.B.; Smolenskij, V.V.; Moskalenko, N.I.

    2004-01-01

    Volatilities of GaCl 3 and alkali metal chlorides over diluted (up to 3 mol %) solutions of GaCl 3 in LiCl, NaCl, KCl, RbCl, and CsCl were measured at 1100 K by dynamic and indirect static methods. Chemical composition of saturated vapor over the mixed melts was determined. Partial pressures of the components were calculated. Their values depend essentially on specific alkali metal cation and on concentration of GaCl 3 ; their variation permits altering parameters of GaCl 3 distillation from the salt melt in a wide range [ru

  18. Toward high value sensing: monolayer-protected metal nanoparticles in multivariable gas and vapor sensors.

    Science.gov (United States)

    Potyrailo, Radislav A

    2017-08-29

    For detection of gases and vapors in complex backgrounds, "classic" analytical instruments are an unavoidable alternative to existing sensors. Recently a new generation of sensors, known as multivariable sensors, emerged with a fundamentally different perspective for sensing to eliminate limitations of existing sensors. In multivariable sensors, a sensing material is designed to have diverse responses to different gases and vapors and is coupled to a multivariable transducer that provides independent outputs to recognize these diverse responses. Data analytics tools provide rejection of interferences and multi-analyte quantitation. This review critically analyses advances of multivariable sensors based on ligand-functionalized metal nanoparticles also known as monolayer-protected nanoparticles (MPNs). These MPN sensing materials distinctively stand out from other sensing materials for multivariable sensors due to their diversity of gas- and vapor-response mechanisms as provided by organic and biological ligands, applicability of these sensing materials for broad classes of gas-phase compounds such as condensable vapors and non-condensable gases, and for several principles of signal transduction in multivariable sensors that result in non-resonant and resonant electrical sensors as well as material- and structure-based photonic sensors. Such features should allow MPN multivariable sensors to be an attractive high value addition to existing analytical instrumentation.

  19. TVA - Thermionic Vacuum Arc - A new type of discharge generating pure metal vapor plasma

    International Nuclear Information System (INIS)

    Musa, G.; Popescu, A.; Mustata, I.; Borcoman, I.; Cretu, M.; Leu, G.F.; Salambas, A.; Ehrich, H.; Schumann, I.

    1996-01-01

    In this paper it is presented a new type of discharge in vacuum conditions generating pure metal vapor plasma with energetic metal ions content. The peculiarities of this heated cathode discharge are described and the dependence of the measured ion energy of the working parameters are established. The ion energy value can be easily and smoothly changed. A nearly linear dependence between energy of ions and arc voltage drop has been observed. The ion energy can be increased by the increase of the interelectrode distance, decrease of cathode temperature, change of the relative position of the electrodes and by the decrease of the arc discharge current. A special configuration with cylindrical geometry has been used to develop a small size and compact metal vapour plasma gun. Due to the mentioned peculiarities, this discharge offers new openings for important applications. (author)

  20. Observation of vapor pressure enhancement of rare-earth metal-halide salts in the temperature range relevant to metal-halide lamps

    Energy Technology Data Exchange (ETDEWEB)

    Curry, J. J.; Henins, A.; Hardis, J. E. [National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Estupinan, E. G. [Osram Sylvania Inc., Beverly, Massachusetts 01915 (United States); Lapatovich, W. P. [Independent Consultant, 51 Pye Brook Lane, Boxford, Massachusetts 01921 (United States); Shastri, S. D. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

    2012-02-20

    Total vapor-phase densities of Dy in equilibrium with a DyI{sub 3}/InI condensate and Tm in equilibrium with a TmI{sub 3}/TlI condensate have been measured for temperatures between 900 K and 1400 K. The measurements show strong enhancements in rare-earth vapor densities compared to vapors in equilibrium with the pure rare-earth metal-halides. The measurements were made with x-ray induced fluorescence on the sector 1-ID beam line at the Advanced Photon Source. The temperature range and salt mixtures are relevant to the operation of metal-halide high-intensity discharge lamps.

  1. Suitable alkaline for graphene peeling grown on metallic catalysts using chemical vapor deposition

    Science.gov (United States)

    Karamat, S.; Sonuşen, S.; Çelik, Ü.; Uysallı, Y.; Oral, A.

    2016-04-01

    In chemical vapor deposition, the higher growth temperature roughens the surface of the metal catalyst and a delicate method is necessary for the transfer of graphene from metal catalyst to the desired substrates. In this work, we grow graphene on Pt and Cu foil via ambient pressure chemical vapor deposition (AP-CVD) method and further alkaline water electrolysis was used to peel off graphene from the metallic catalyst. We used different electrolytes i.e., sodium hydroxide (NaOH), potassium hydroxide (KOH), lithium hydroxide (LiOH) and barium hydroxide Ba(OH)2 for electrolysis, hydrogen bubbles evolved at the Pt cathode (graphene/Pt/PMMA stack) and as a result graphene layer peeled off from the substrate without damage. The peeling time for KOH and LiOH was ∼6 min and for NaOH and Ba(OH)2 it was ∼15 min. KOH and LiOH peeled off graphene very efficiently as compared to NaOH and Ba(OH)2 from the Pt electrode. In case of copper, the peeling time is ∼3-5 min. Different characterizations like optical microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and atomic force microscopy were done to analyze the as grown and transferred graphene samples.

  2. Henry's Law vaporization studies and thermodynamics of einsteinium-253 metal dissolved in ytterbium

    International Nuclear Information System (INIS)

    Kleinschmidt, P.D.; Ward, J.W.; Matlack, G.M.; Haire, R.G.

    1984-01-01

    The cohesive energy of metallic einsteinium determines whether einsteinium is a trivalent or divalent metal. The enthalpy of sublimation, a measure of the cohesive energy, is calculated from the partial pressures of einsteinium over an alloy. The partial pressure of 253 Es has been measured over the range 470--870 K, using combined target and mass spectrometric Knudsen effusion techniques. An alloy was prepared with einsteinium dissolved in a ytterbium solvent to produce a very dilute solution. Partial pressure measurements on the alloy were amenable to the experimental technique and a data analysis using a Henry's law treatment of the data. Vapor pressure data are combined with an estimated crystal entropy S 0 298 and ΔC 0 /sub p/ for ytterbium, to produce enthalpy, entropy, and free energy functions from 298 to 1300 K. The vapor pressure of einsteinium in a dilute einsteinium--ytterbium alloy is described by the equation log P(atm) = -(6815 +- 216)/T+2.576 +- 0.337, from which we calculate for the enthalpy of sublimation of pure einsteinium ΔH 0 298 (second law) = 31.76 kcal/mol. The value of the enthalpy of sublimation is consistent with the conclusion that Es is a divalent metal

  3. Magnetron target designs to improve wafer edge trench filling in ionized metal physical vapor deposition

    International Nuclear Information System (INIS)

    Lu Junqing; Yoon, Jae-Hong; Shin, Keesam; Park, Bong-Gyu; Yang Lin

    2006-01-01

    Severe asymmetry of the metal deposits on the trench sidewalls occurs near the wafer edge during low pressure ionized metal physical vapor deposition of Cu seed layer for microprocessor interconnects. To investigate this process and mitigate the asymmetry, an analytical view factor model based on the analogy between metal sputtering and diffuse thermal radiation was constructed. The model was validated based on the agreement between the model predictions and the reported experimental values for the asymmetric metal deposition at trench sidewalls near the wafer edge for a 200 mm wafer. This model could predict the thickness of the metal deposits across the wafer, the symmetry of the deposits on the trench sidewalls at any wafer location, and the angular distributions of the metal fluxes arriving at any wafer location. The model predictions for the 300 mm wafer indicate that as the target-to-wafer distance is shortened, the deposit thickness increases and the asymmetry decreases, however the overall uniformity decreases. Up to reasonable limits, increasing the target size and the sputtering intensity for the outer target portion significantly improves the uniformity across the wafer and the symmetry on the trench sidewalls near the wafer edge

  4. Vapor phase carbonylation of dimethyl ether and methyl acetate with supported transition metal catalysts

    International Nuclear Information System (INIS)

    Shikada, T.; Fujimoto, K.; Tominaga, H.O.

    1986-01-01

    The synthesis of acetic acid (AcOH) from methanol (MeOH) and carbon monoxide has been performed industrially in the liquid phase using a rhodium complex catalyst and an iodide promoter. The selectivity to AcOH is more than 99% under mild conditions (175 0 C, 28 atm). The homogeneous rhodium catalyst has been also effective for the synthesis of acetic anhydride (Ac 2 O) by carbonylation of dimethyl ether (DME) or methyl acetate (AcOMe). However, rhodium is one of the most expensive metals and its proved reserves are quite limited. It is highly desired, therefore, to develop a new catalyst as a substitute for rhodium. The authors have already reported that nickel supported on active carbon exhibits an excellent activity for the vapor phase carbonylation of MeOh in the presence of iodide promoter and under moderately pressurized conditions. In addition, corrosive attack on reactors by iodide compounds is expected to be negligible in the vapor phase system. In the present work, vapor phase carbonylation of DME and AcOMe on nickel-active carbon (Ni/A.C.) and molybdenum-active carbon (Mo/A.C.) catalysts was studied

  5. Structured nanocarbon on various metal foils by microwave plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Rius, G; Yoshimura, M

    2013-01-01

    We present a versatile process for the engineering of nanostructures made of crystalline carbon on metal foils. The single step process by microwave plasma-enhance chemical vapor deposition is demonstrated for various substrate materials, such as Ni or Cu. Either carbon nanotubes (CNT) or carbon nanowalls (CNW) are obtained under same growth conditions and without the need of additional catalyst. The use of spacer and insulator implies a certain control over the kind of allotropes that are obtained. High density and large surface area are morphological characteristics of the thus obtained C products. The possibility of application on many metals, and in the alloy composition, on as-delivered commercially available foils indicates that this strategy can be adapted to a bunch of specific applications, while the production of C nanostructures is of remarkable simplicity.

  6. Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition

    Science.gov (United States)

    Tai, Lixuan; Zhu, Daming; Liu, Xing; Yang, Tieying; Wang, Lei; Wang, Rui; Jiang, Sheng; Chen, Zhenhua; Xu, Zhongmin; Li, Xiaolong

    2018-06-01

    The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates. [Figure not available: see fulltext.

  7. High temperature vapor pressures of stainless steel type 1.4970 and of some other pure metals from laser evaporation

    International Nuclear Information System (INIS)

    Bober, M.; Singer, J.

    1984-10-01

    For the safety analysis of nuclear reactors vapor pressure data of stainless steel are required up to temperatures exceeding 4000 K. In analogy to the classic boiling point method a new technique was developed to measure the high-temperature vapor pressures of stainless steel and other metals from laser vaporization. A fast pyrometer, an ion current probe and an image converter camera are used to detect incipient boiling from the time-temperature curve. The saturated-vapor pressure curves of stainless steel (Type 1.4970), being a cladding material of the SNR 300 breeder reactor, and of molybdenum are experimentally determined in the temperature ranges of 2800-3900 K and 4500-5200 K, respectively. The normal boiling points of iron, nickel, titanium, vanadium and zirconium are verified. Besides, spectral emissivity values of the liquid metals are measured at the pyrometer wavelengths of 752 nm and/or 940 nm. (orig.) [de

  8. Collision Welding of Dissimilar Materials by Vaporizing Foil Actuator: A Breakthrough Technology for Dissimilar Metal Joining

    Energy Technology Data Exchange (ETDEWEB)

    Daehn, Glenn S. [The Ohio State Univ., Columbus, OH (United States). Dept. of Materials Science and Engineering; Vivek, Anupam [The Ohio State Univ., Columbus, OH (United States). Dept. of Materials Science and Engineering; Liu, Bert C. [The Ohio State Univ., Columbus, OH (United States). Dept. of Materials Science and Engineering

    2016-09-30

    This work demonstrated and further developed Vaporizing Foil Actuator Welding (VFAW) as a viable technique for dissimilar-metal joining for automotive lightweighting applications. VFAW is a novel impact welding technology, which uses the pressure developed from electrically-assisted rapid vaporization of a thin aluminum foil (the consumable) to launch and ultimately collide two of more pieces of metal to create a solid-state bond between them. 18 dissimilar combinations of automotive alloys from the steel, aluminum and magnesium alloy classes were screened for weldability and characterized by metallography of weld cross sections, corrosion testing, and mechanical testing. Most combinations, especially a good number of Al/Fe pairs, were welded successfully. VFAW was even able to weld combinations of very high strength materials such as 5000 and 6000 series aluminum alloys to boron and dual phase steels, which is difficult to impossible by other joining techniques such as resistance spot welding, friction stir welding, or riveting. When mechanically tested, the samples routinely failed in a base metal rather than along the weld interface, showing that the weld was stronger than either of the base metals. As for corrosion performance, a polymer-based protective coating was used to successfully combat galvanic corrosion of 5 Al/Fe pairs through a month-long exposure to warm salt fog. In addition to the technical capabilities, VFAW also consumes little energy compared to conventional welding techniques and requires relatively light, flexible tooling. Given the technical and economic advantages, VFAW can be a very competitive joining technology for automotive lightweighting. The success of this project and related activities has resulted in substantial interest not only within the research community but also various levels of automotive supply chain, which are collaborating to bring this technology to commercial use.

  9. Sensing and capture of toxic and hazardous gases and vapors by metal-organic frameworks.

    Science.gov (United States)

    Wang, Hao; Lustig, William P; Li, Jing

    2018-03-13

    Toxic and hazardous chemical species are ubiquitous, predominantly emitted by anthropogenic activities, and pose serious risks to human health and the environment. Thus, the sensing and subsequent capture of these chemicals, especially in the gas or vapor phase, are of extreme importance. To this end, metal-organic frameworks have attracted significant interest, as their high porosity and wide tunability make them ideal for both applications. These tailorable framework materials are particularly promising for the specific sensing and capture of targeted chemicals, as they can be designed to fit a diverse range of required conditions. This review will discuss the advantages of metal-organic frameworks in the sensing and capture of harmful gases and vapors, as well as principles and strategies guiding the design of these materials. Recent progress in the luminescent detection of aromatic and aliphatic volatile organic compounds, toxic gases, and chemical warfare agents will be summarized, and the adsorptive removal of fluorocarbons/chlorofluorocarbons, volatile radioactive species, toxic industrial gases and chemical warfare agents will be discussed.

  10. Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

    Science.gov (United States)

    Collis, Ward J.; Abul-Fadl, Ali

    1988-01-01

    The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

  11. Effect of melt surface depression on the vaporization rate of a metal heated by an electron beam

    International Nuclear Information System (INIS)

    Guilbaud, D.

    1995-01-01

    In order to produce high density vapor, a metal confined in a water cooled crucible is heated by an electron beam (eb). The energy transfer to the metal causes partial melting, forming a pool where the flow is driven by temperature induced buoyancy and capillary forces. Furthermore, when the vaporization rate is high, the free surface is depressed by the thrust of the vapor. The main objective of this paper is to analyse the combined effects of liquid flow and vapor condensation back on the liquid surface. This is done with TRIO-EF, a general purpose fluid mechanics finite element code. A suitable iterative scheme is used to calculate the free surface flow and the temperature field. The numerical simulation gives an insight about the influence of the free surface in heat transfer. The depression of the free surface induces strong effects on both liquid and vapor. As liquid is concerned, buoyancy convection in the pool is enhanced, the energy flux from electron beam is spread and constriction of heat flux under the eb spot is weakened. It results that heat transfer towards the crucible is reinforced. As vapor is concerned, its fraction that condenses back on the liquid surface is increased. These phenomena lead to a saturation of the net vaporization rate as the eb spot radius is reduced, at constant eb power. (author). 8 refs., 13 figs., 2 tabs

  12. Suitable alkaline for graphene peeling grown on metallic catalysts using chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Karamat, S., E-mail: shumailakaramat@gmail.com [Department of Physics, Middle East Technical University, Ankara 06800 (Turkey); COMSATS Institute of Information Technology, Islamabad 54000 (Pakistan); Sonuşen, S. [Sabancı Üniversitesi (SUNUM), İstanbul 34956 (Turkey); Çelik, Ü. [Nanomagnetics Instruments, Ankara (Turkey); Uysallı, Y. [Department of Physics, Middle East Technical University, Ankara 06800 (Turkey); Oral, A., E-mail: orahmet@metu.edu.tr [Department of Physics, Middle East Technical University, Ankara 06800 (Turkey)

    2016-04-15

    Graphical abstract: - Highlights: • Graphene layers were grown on Pt and Cu foil via ambient pressure chemical vapor deposition method and for the delicate removal of graphene from metal catalysts, electrolysis method was used by using different alkaline (sodium hydroxide, potassium hydroxide, lithium hydroxide and barium hydroxide). • The delamination speed of PMMA/graphene stack was higher during the KOH and LiOH electrolysis as compare to NaOH and Ba(OH){sub 2}. Ba(OH){sub 2} is not advisable because of the residues left on the graphene surface which would further trapped in between graphene and SiO{sub 2}/Si surface after transfer. The average peeling time in case of Pt electrode is ∼6 min for KOH and LiOH and ∼15 min for NaOH and Ba(OH){sub 2}. • Electrolysis method also works for the Cu catalyst. The peeling of graphene was faster in the case of Cu foil due to small size of bubbles which moves faster between the stack and the electrode surface. The average peeling time was ∼3–5 min. • XPS analysis clearly showed that the Pt substrates can be re-used again. Graphene layer was transferred to SiO{sub 2}/Si substrates and to the flexible substrate by using the same peeling method. - Abstract: In chemical vapor deposition, the higher growth temperature roughens the surface of the metal catalyst and a delicate method is necessary for the transfer of graphene from metal catalyst to the desired substrates. In this work, we grow graphene on Pt and Cu foil via ambient pressure chemical vapor deposition (AP-CVD) method and further alkaline water electrolysis was used to peel off graphene from the metallic catalyst. We used different electrolytes i.e., sodium hydroxide (NaOH), potassium hydroxide (KOH), lithium hydroxide (LiOH) and barium hydroxide Ba(OH){sub 2} for electrolysis, hydrogen bubbles evolved at the Pt cathode (graphene/Pt/PMMA stack) and as a result graphene layer peeled off from the substrate without damage. The peeling time for KOH and Li

  13. Suitable alkaline for graphene peeling grown on metallic catalysts using chemical vapor deposition

    International Nuclear Information System (INIS)

    Karamat, S.; Sonuşen, S.; Çelik, Ü.; Uysallı, Y.; Oral, A.

    2016-01-01

    Graphical abstract: - Highlights: • Graphene layers were grown on Pt and Cu foil via ambient pressure chemical vapor deposition method and for the delicate removal of graphene from metal catalysts, electrolysis method was used by using different alkaline (sodium hydroxide, potassium hydroxide, lithium hydroxide and barium hydroxide). • The delamination speed of PMMA/graphene stack was higher during the KOH and LiOH electrolysis as compare to NaOH and Ba(OH)_2. Ba(OH)_2 is not advisable because of the residues left on the graphene surface which would further trapped in between graphene and SiO_2/Si surface after transfer. The average peeling time in case of Pt electrode is ∼6 min for KOH and LiOH and ∼15 min for NaOH and Ba(OH)_2. • Electrolysis method also works for the Cu catalyst. The peeling of graphene was faster in the case of Cu foil due to small size of bubbles which moves faster between the stack and the electrode surface. The average peeling time was ∼3–5 min. • XPS analysis clearly showed that the Pt substrates can be re-used again. Graphene layer was transferred to SiO_2/Si substrates and to the flexible substrate by using the same peeling method. - Abstract: In chemical vapor deposition, the higher growth temperature roughens the surface of the metal catalyst and a delicate method is necessary for the transfer of graphene from metal catalyst to the desired substrates. In this work, we grow graphene on Pt and Cu foil via ambient pressure chemical vapor deposition (AP-CVD) method and further alkaline water electrolysis was used to peel off graphene from the metallic catalyst. We used different electrolytes i.e., sodium hydroxide (NaOH), potassium hydroxide (KOH), lithium hydroxide (LiOH) and barium hydroxide Ba(OH)_2 for electrolysis, hydrogen bubbles evolved at the Pt cathode (graphene/Pt/PMMA stack) and as a result graphene layer peeled off from the substrate without damage. The peeling time for KOH and LiOH was ∼6 min and for NaOH and

  14. Electrical properties of polymer modified by metal ion implantation

    International Nuclear Information System (INIS)

    Wu Yuguang; Zhang Tonghe; Zhang Huixing; Zhang Xiaoji; Deng Zhiwei; Zhou Gu

    2000-01-01

    Polyethylene terephthalate (PET) has been modified by Ag, Cr, Cu and Si ion implantation with a dose range from 1x10 16 to 2x10 17 ions cm -2 using a metal vapor vacuum arc (MEVVA) source. The electrical properties of PET have been changed after metal ion implantation. The resistivity of implanted PET decreased obviously with an increase of ion dose. When metal ion dose of 2x10 17 cm -2 was selected, the resistivity of PET could be less than 10 Ω cm, but when Si ions are implanted, the resistivity of PET would be up to several hundred Ω cm. The results show that the conductive behavior of a metal ion implanted sample is obviously different from Si implantation one. The changes of the structure and composition have been observed with transmission electron microscope (TEM) and X-ray diffraction (XRD). The surface structure is varying after ion implantation and it is believed that the change would cause the improvement of the conductive properties. The mechanism of electrical conduction will be discussed

  15. An efficient laser vaporization source for chemically modified metal clusters characterized by thermodynamics and kinetics

    Science.gov (United States)

    Masubuchi, Tsugunosuke; Eckhard, Jan F.; Lange, Kathrin; Visser, Bradley; Tschurl, Martin; Heiz, Ulrich

    2018-02-01

    A laser vaporization cluster source that has a room for cluster aggregation and a reactor volume, each equipped with a pulsed valve, is presented for the efficient gas-phase production of chemically modified metal clusters. The performance of the cluster source is evaluated through the production of Ta and Ta oxide cluster cations, TaxOy+ (y ≥ 0). It is demonstrated that the cluster source produces TaxOy+ over a wide mass range, the metal-to-oxygen ratio of which can easily be controlled by changing the pulse duration that influences the amount of reactant O2 introduced into the cluster source. Reaction kinetic modeling shows that the generation of the oxides takes place under thermalized conditions at less than 300 K, whereas metal cluster cores are presumably created with excess heat. These characteristics are also advantageous to yield "reaction intermediates" of interest via reactions between clusters and reactive molecules in the cluster source, which may subsequently be mass selected for their reactivity measurements.

  16. Composition and Morphology Control of Metal Dichalcogenides via Chemical Vapor Deposition for Photovoltaic and Nanoelectronic Applications

    Science.gov (United States)

    Samad, Leith L. J.

    The body of work reviewed here encompasses a variety of metal dichalcogenides all synthesized using chemical vapor deposition (CVD) for solar and electronics applications. The first reported phase-pure CVD synthesis of iron pyrite thin films is presented with detailed structural and electrochemical analysis. The phase-pure thin film and improved crystal growth on a metallic backing material represents one of the best options for potential solar applications using iron pyrite. Large tin-sulfur-selenide solid solution plates with tunable bandgaps were also synthesized via CVD as single-crystals with a thin film geometry. Solid solution tin-sulfur-selenide plates were demonstrated to be a new material for solar cells with the first observed solar conversion efficiencies up to 3.1%. Finally, a low temperature molybdenum disulfide vertical heterostructure CVD synthesis with layered controlled growth was achieved with preferential growth enabled by Van der Waals epitaxy. Through recognition of additional reaction parameters, a fully regulated CVD synthesis enabled the controlled growth of 1-6 molybdenum disulfide monolayers for nanoelectronic applications. The improvements in synthesis and materials presented here were all enabled by the control afforded by CVD such that advances in phase purity, growth, and composition control of several metal dichalcogenides were achieved. Further work will be able to take full advantage of these advances for future solar and electronics technologies.

  17. Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

    KAUST Repository

    Li, Henan

    2016-10-31

    Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer the advantages of better electronic contact and easier band offset tuning. Here, we demonstrate a photoresist-free focused ion beam (FIB) method to pattern as-grown TMDC monolayers by chemical vapor deposition, where the exposed edges from FIB etching serve as the seeds for growing a second TMDC material to form desired lateral heterostructures with arbitrary layouts. The proposed lithographic and growth processes offer better controllability for fabrication of the TMDC heterostrucuture, which enables the construction of devices based on heterostructural monolayers. © 2016 American Chemical Society.

  18. Statistical analysis of dimer formation in supersaturated metal vapor based on molecular dynamics simulation

    Science.gov (United States)

    Korenchenko, Anna E.; Vorontsov, Alexander G.; Gelchinski, Boris R.; Sannikov, Grigorii P.

    2018-04-01

    We discuss the problem of dimer formation during the homogeneous nucleation of atomic metal vapor in an inert gas environment. We simulated nucleation with molecular dynamics and carried out the statistical analysis of double- and triple-atomic collisions as the two ways of long-lived diatomic complex formation. Close pair of atoms with lifetime greater than the mean time interval between atom-atom collisions is called a long-lived diatomic complex. We found that double- and triple-atomic collisions gave approximately the same probabilities of long-lived diatomic complex formation, but internal energy of the resulted state was essentially lower in the second case. Some diatomic complexes formed in three-particle collisions are stable enough to be a critical nucleus.

  19. Optical emission spectroscopy of metal vapor dominated laser-arc hybrid welding plasma

    International Nuclear Information System (INIS)

    Ribic, B.; DebRoy, T.; Burgardt, P.

    2011-01-01

    During laser-arc hybrid welding, plasma properties affect the welding process and the weld quality. However, hybrid welding plasmas have not been systematically studied. Here we examine electron temperatures, species densities, and electrical conductivity for laser, arc, and laser-arc hybrid welding using optical emission spectroscopy. The effects of arc currents and heat source separation distances were examined because these parameters significantly affect weld quality. Time-average plasma electron temperatures, electron and ion densities, electrical conductivity, and arc stability decrease with increasing heat source separation distance during hybrid welding. Heat source separation distance affects these properties more significantly than the arc current within the range of currents considered. Improved arc stability and higher electrical conductivity of the hybrid welding plasma result from increased heat flux, electron temperatures, electron density, and metal vapor concentrations relative to arc or laser welding.

  20. Infrared transmission study of lanthanide fullerides SmxC60 prepared by metal vapor synthesis

    International Nuclear Information System (INIS)

    Zhao, W.; Simmons, W.B. Jr.; Sweany, R.L.

    1997-01-01

    Lanthanide fulleride Sm x C 60 films were prepared by metal vapor synthesis and the valence state of the C 60 cage in the films was investigated by infrared transmission spectroscopy. Three films with different doping contents of Sm showed red-shift frequencies of F 1u (4) at 1347, 1362 and 1392 (1411) cm -1 , respectively, indicating that the major phase with corresponding valence state n∼-5, -3 and -1 might exist in the films. The other major additional feature of activated pentagonal pinch mode A g (2) was observed at 1445 or 1448 cm -1 in the films, which suggested that the Sm atoms might bond to the five-membered ring of the C 60 cage and ferrocene-like Sm x C 60 complexes might be formed. (orig.)

  1. High power uv metal vapor ion lasers pumped by thermal energy charge exchange

    International Nuclear Information System (INIS)

    Kan, T.

    1975-01-01

    The requirement for efficient and scalable laser sources for laser isotope separation (LIS) has recently been brought into sharp focus. The lack of suitable coherent sources is particularly severe in the uv, a spectral region of interest for more efficient and advanced isotope separation schemes. This report explores the general class of metal vapor ion lasers pumped by thermal energy charge exchange (TECX) as possible scalable coherent sources for LIS with the following potential characteristics: (1) availability of discrete wavelengths spanning the wavelength region between 2000 A less than lambda less than 8000 A, (2) pulsed or cw operation in the multi-kilowatt average power levels, (3) overall device efficiencies approaching one percent, and (4) the engineering of practical laser devices using relatively benign electron beam technology. (U.S.)

  2. InAs film grown on Si(111) by metal organic vapor phase epitaxy

    International Nuclear Information System (INIS)

    Caroff, P; Jeppsson, M; Mandl, B; Wernersson, L-E; Wheeler, D; Seabaugh, A; Keplinger, M; Stangl, J; Bauer, G

    2008-01-01

    We report the successful growth of high quality InAs films directly on Si(111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 0 C for a thickness of 2 μm. We measured a high value of the electron mobility of 5100 cm 2 /Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization

  3. Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy

    Science.gov (United States)

    Sekiguchi, Kazuki; Shirakawa, Hiroki; Chokawa, Kenta; Araidai, Masaaki; Kangawa, Yoshihiro; Kakimoto, Koichi; Shiraishi, Kenji

    2018-04-01

    We analyzed the decomposition of Ga(CH3)3 (TMG) during the metal organic vapor phase epitaxy (MOVPE) of GaN on the basis of first-principles calculations and thermodynamic analysis. We performed activation energy calculations of TMG decomposition and determined the main reaction processes of TMG during GaN MOVPE. We found that TMG reacts with the H2 carrier gas and that (CH3)2GaH is generated after the desorption of the methyl group. Next, (CH3)2GaH decomposes into (CH3)GaH2 and this decomposes into GaH3. Finally, GaH3 becomes GaH. In the MOVPE growth of GaN, TMG decomposes into GaH by the successive desorption of its methyl groups. The results presented here concur with recent high-resolution mass spectroscopy results.

  4. Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Kim, Min Hwa; Moon, Dae Young; Park, Jinsub; Nanishi, Yasushi; Yi, Gyu-Chul; Yoon, Euijoon

    2012-01-01

    We demonstrated the growth of catalyst-free InN nanostructures including nanorods on (0001) Al 2 O 3 substrates using metal-organic chemical vapor deposition. As the growth time increased, growth rate along c-direction increased superlinearly with decreasing c-plane area fractions and increasing side wall areas. It was also found that desorption from the sidewalls of InN nanostructures during the InN nanorods formation was one of essential key parameters of the growth mechanism. We propose a growth model to explain the InN nanostructure evolution by considering the side wall desorption and re-deposition of indium at top c-plane surfaces. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Contamination spike simulation and measurement in a clean metal vapor laser

    International Nuclear Information System (INIS)

    Lin, C.E.; Yang, C.Y.

    1990-01-01

    This paper describes a new method for the generation of contamination-induced voltage spikes in a clean metal vapor laser. The method facilitates the study of the characteristics of this troublesome phenomenon in laser systems. Analysis of these artificially generated dirt spikes shows that the breakdown time of the laser tube is increased when these spike appear. The concept of a Townsend discharge is used to identify the parameter which changes the breakdown time of the discharges. The residual ionization control method is proposed to generate dirt spikes in a clean laser. Experimental results show that a wide range of dirt spike magnitudes can be obtained by using the proposed method. The method provides easy and accurate control of the magnitude of the dirt spike, and the laser tube does not become polluted. Results based on the measurements can be used in actual laser systems to monitor the appearance of dirt spikes and thus avoid the danger of thyratron failure

  6. Vapor-Phase Deposition and Modification of Metal-Organic Frameworks: State-of-the-Art and Future Directions.

    Science.gov (United States)

    Stassen, Ivo; De Vos, Dirk; Ameloot, Rob

    2016-10-04

    Materials processing, and thin-film deposition in particular, is decisive in the implementation of functional materials in industry and real-world applications. Vapor processing of materials plays a central role in manufacturing, especially in electronics. Metal-organic frameworks (MOFs) are a class of nanoporous crystalline materials on the brink of breakthrough in many application areas. Vapor deposition of MOF thin films will facilitate their implementation in micro- and nanofabrication research and industries. In addition, vapor-solid modification can be used for postsynthetic tailoring of MOF properties. In this context, we review the recent progress in vapor processing of MOFs, summarize the underpinning chemistry and principles, and highlight promising directions for future research. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Development of metal oxide gas sensors for very low concentration (ppb) of BTEX vapors

    Science.gov (United States)

    Favard, A.; Aguir, K.; Contaret, T.; Caris, L.; Bendahan, M.

    2017-12-01

    The control and analysis of air quality have become a major preoccupation of the last twenty years. In 2008, the European Union has introduced a Directive (2008/50/EC) to impose measurement obligations and thresholds to not exceed for some pollutants, including BTEX gases, in view of their adverse effects on the health. In this paper, we show the ability to detect very low concentrations of BTEX using a gas microsensor based on metal oxide thin-film. A test bench able to generate very low vapors concentrations has been achieved and fully automated. Thin metal oxides layers have been realized by reactive magnetron sputtering. The sensitive layers are functionalized with gold nanoparticles by thermal evaporation technique. Our sensors have been tested on a wide range of concentrations of BTEX (5 - 500 ppb) and have been able to detect concentrations of a few ppb for operating temperatures below 593 K. These results are very promising for detection of very low BTEX concentration for indoor as well as outdoor application. We showed that the addition of gold nanoparticles on the sensitive layers decreases the sensors operating temperature and increases the response to BTEX gas. The best results are obtained with a sensitive layer based on ZnO.

  8. An inverted cylindrical sputter magnetron as metal vapor supply for electron cyclotron resonance ion sources

    Energy Technology Data Exchange (ETDEWEB)

    Weichsel, T., E-mail: tim.weichsel@fep.fraunhofer.de; Hartung, U.; Kopte, T. [Fraunhofer Institute for Electron Beam and Plasma Technology, 01277 Dresden (Germany); Zschornack, G. [Institute of Solid State Physics, Dresden University of Technology, 01062 Dresden, Germany and Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Dresden (Germany); Kreller, M.; Silze, A. [DREEBIT GmbH, 01900 Grossroehrsdorf (Germany)

    2014-05-15

    An inverted cylindrical sputter magnetron device has been developed. The magnetron is acting as a metal vapor supply for an electron cyclotron resonance (ECR) ion source. FEM simulation of magnetic flux density was used to ensure that there is no critical interaction between both magnetic fields of magnetron and ECR ion source. Spatially resolved double Langmuir probe and optical emission spectroscopy measurements show an increase in electron density by one order of magnitude from 1 × 10{sup 10} cm{sup −3} to 1 × 10{sup 11} cm{sup −3}, when the magnetron plasma is exposed to the magnetic mirror field of the ECR ion source. Electron density enhancement is also indicated by magnetron plasma emission photography with a CCD camera. Furthermore, photographs visualize the formation of a localized loss-cone - area, when the magnetron is operated at magnetic mirror field conditions. The inverted cylindrical magnetron supplies a metal atom load rate of R > 1 × 10{sup 18} atoms/s for aluminum, which meets the demand for the production of a milliampere Al{sup +} ion beam.

  9. Development of Y-BA-CU-O Coated Conductor Using Metal Organic Chemical Vapor Deposition

    National Research Council Canada - National Science Library

    Selvamanickam, V

    2003-01-01

    .... The program includes a study of the a) influence of MOCVD processing conditions such as the flow rate of precursor vapors, precursor vaporization temperatures, oxygen partial pressure, reactor pressure, and the deposition temperature...

  10. The detection of sodium vapor bubble collapse in a liquid metal fast breeder reactor

    International Nuclear Information System (INIS)

    Carey, W.M.; Gavin, A.P.; Bobis, J.P.; Sheen, S.H.; Anderson, T.T.; Doolittle, R.D.; Albrecht, R.W.

    1977-01-01

    Sodium boiling detection utilizing the sound pressure emanated during the collapse of a sodium vapour bubble in a subcooled media is discussed in terms of the sound characteristic, the reactor ambient noise background, transmission loss considerations and performance criteria. Data obtained in several loss of flow experiments on Fast Test Reactor Fuel Elements indicate that the collapse of the sodium vapour bubble depends on the presence of a subcooled structure or sodium. The collapse pressure pulse was observed in all cases to be on the order of a kPa, indicating a soft type of cavitational collapse. Spectral examination of the pulses indicates the response function of the test structure and geometry is important. The sodium boiling observed in these experiments was observed to occur at a low ( 0 C) liquid superheat with the rate of occurrence of sodium vapor bubble collapse in the 3 to 30 Hz range. Reactor ambient noise data were found to be due to machinery induced vibrations flow induced vibrations, and flow noise. These data were further found to be weakly stationary enhancing the possibility of acoustic surveillance of an operating Liquid Metal Fast Breeder Reactor. Based on these noise characteristics and extrapolating the noise measurements from the Fast Flux Test Facility Pump (FFTP), one would expect a signal to noise ratio of up to 20 dB in the absence of transmission loss. The requirement of a low false alarm probability is shown to necessitate post detection analysis of the collapse event sequence and the cross correlation with the second derivative of the neutronic boiling detection signal. Sodium boiling detection using the sounds emitted during sodium vapor bubble collapse are shown to be feasible but a need for in-reactor demonstration is necessary. (author)

  11. Epitaxial Oxide Thin Films Grown by Solid Source Metal-Organic Chemical Vapor Deposition.

    Science.gov (United States)

    Lu, Zihong

    1995-01-01

    The conventional liquid source metal-organic chemical vapor deposition (MOCVD) technique is capable of producing large area, high quality, single crystal semiconductor films. However, the growth of complex oxide films by this method has been hampered by a lack of suitable source materials. While chemists have been actively searching for new source materials, the research work reported here has demonstrated the successful application of solid metal-organic sources (based on tetramethylheptanedionate) to the growth of high quality thin films of binary compound cerium dioxide (CeO_2), and two more complex materials, the ternary compound lithium niobate (LiNbO_3), with two cations, and the quaternary compound strontium barium niobate (SBN), with three cations. The growth of CeO_2 thin films on (1012)Al_2O_3 substrates has been used as a model to study the general growth behavior of oxides. Factors affecting deposition rate, surface morphology, out-of-plane mosaic structure, and film orientation have been carefully investigated. A kinetic model based on gas phase prereaction is proposed to account for the substrate temperature dependence of film orientation found in this system. Atomically smooth, single crystal quality cerium dioxide thin films have been obtained. Superconducting YBCO films sputtered on top of solid source MOCVD grown thin cerium dioxide buffer layers on sapphire have been shown to have physical properties as good as those of YBCO films grown on single crystal MgO substrates. The thin film growth of LiNbO_3 and Sr_{1-x}Ba _{x}Nb_2 O_6 (SBN) was more complex and challenging. Phase purity, transparency, in-plane orientation, and the ferroelectric polarity of LiNbO _3 films grown on sapphire substrates was investigated. The first optical quality, MOCVD grown LiNbO _3 films, having waveguiding losses of less than 2 dB/cm, were prepared. An important aspect of the SBN film growth studies involved finding a suitable single crystal substrate material. Mg

  12. Beryllium doped p-type GaN grown by metal-organic chemical vapor depostion

    International Nuclear Information System (INIS)

    Al-Tahtamouni, T.M.; Sedhain, A.; Lin, J.Y.; Jiang, H.X.

    2010-01-01

    The authors report on the growth of Be-doped p-type GaN epilayers by metal-organic chmical vapor deposition (MOCVD). The electrical and optical properties of the Be-doped GaN epilayers were studied by Hall-effect measurements and photoluminescence (PL) spectroscopy. The PL spectra of Be-doped GaN epilayers ethibited two emission lines at 3.36 and 2.71 eV, which were obsent in undoped epilayers. The transition at 3.36 eV was at 3.36 and 2.71eV, which were absent in undoped epilayers. The transition at 3.36 eV was assigned to the transition of free electrons to the neutral Be acceptor Be d eg.. The transition at 2.71 eV was assigned to the transition of electrons bound to deep level donors to the Be d eg. acceptors. Three independent measurements: (a) resistivity vs. temperature, (b) PL peak positions between Be doped and undoped GaN and (c) activation energy of 2.71 eV transition all indicate that the Be energy level is between 120 and 140 meV above the valence band. This is about 20-40 meV shallower than the Mg energy level (160 meV) in GaN. It is thus concluded that Be could be an excellent acceptor dopant in nitride materials. (authors).

  13. In situ synchrotron X-ray studies during metal-organic chemical vapor deposition of semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Thompson, Carol [Northern Illinois Univ., DeKalb, IL (United States); Argonne National Lab., Argonne, IL (United States); Highland, Matthew J.; Perret, Edith; Fuoss, Paul H.; Streiffer, Stephen K.; Stephenson, G. Brian [Argonne National Lab., Argonne, IL (United States); Richard, Marie-Ingrid [Universite Paul Cezanne Aix-Marseille, Marseille (France)

    2012-07-01

    In-situ, time-resolved techniques provide valuable insight into the complex interplay of surface structural and chemical evolution occurring during materials synthesis and processing of semiconductors. Our approach is to observe the evolution of surface structure and morphology at the atomic scale in real-time during metal organic vapor phase deposition (MOCVD) by using grazing incidence x-ray scattering and X-ray fluorescence, coupled with visible light scattering. Our vertical-flow MOCVD chamber is mounted on a 'z-axis' surface diffractometer designed specifically for these studies of the film growth, surface evolution and the interactions within a controlled growth environment. These techniques combine the ability of X-rays to penetrate a complex environment for measurements during growth and processing, with the sensitivity of surface scattering techniques to atomic and nanoscale structure. In this talk, we outline our program and discuss examples from our in-situ and real-time X-ray diffraction and fluorescence studies of InN, GaN, and InGaN growth on GaN(0001).

  14. Investigation of anti-Relaxation coatings for alkali-metal vapor cells using surface science techniques

    Energy Technology Data Exchange (ETDEWEB)

    Seltzer, S. J.; Michalak, D. J.; Donaldson, M. H.; Balabas, M. V.; Barber, S. K.; Bernasek, S. L.; Bouchiat, M.-A.; Hexemer, A.; Hibberd, A. M.; Jackson Kimball, D. F.; Jaye, C.; Karaulanov, T.; Narducci, F. A.; Rangwala, S. A.; Robinson, H. G.; Shmakov, A. K.; Voronov, D. L.; Yashchuk, V. V.; Pines, A.; Budker, D.

    2010-10-11

    Many technologies based on cells containing alkali-metal atomic vapor benefit from the use of antirelaxation surface coatings in order to preserve atomic spin polarization. In particular, paraffin has been used for this purpose for several decades and has been demonstrated to allow an atom to experience up to 10?000 collisions with the walls of its container without depolarizing, but the details of its operation remain poorly understood. We apply modern surface and bulk techniques to the study of paraffin coatings in order to characterize the properties that enable the effective preservation of alkali spin polarization. These methods include Fourier transform infrared spectroscopy, differential scanning calorimetry, atomic force microscopy, near-edge x-ray absorption fine structure spectroscopy, and x-ray photoelectron spectroscopy. We also compare the light-induced atomic desorption yields of several different paraffin materials. Experimental results include the determination that crystallinity of the coating material is unnecessary, and the detection of C=C double bonds present within a particular class of effective paraffin coatings. Further study should lead to the development of more robust paraffin antirelaxation coatings, as well as the design and synthesis of new classes of coating materials.

  15. Experimental study on vapor explosion induced by pressure pulse in coarse mixing of hot molten metal and water

    International Nuclear Information System (INIS)

    Inoue, A.; Tobita, Y.; Aritomi, M.; Takahashi, M.; Matsuzaki, M.

    2004-01-01

    An experimental study was done to investigate characteristics of metal-water interaction, when a mount of hot liquid metal is injected into the water. The test section is a vertical shock tube of 60mm in inner diameter and 1200mm in length. A special injector which is designed to inject hot metal of controlled volume and flow rate is attached at the top of the tube. When the hot metal is injected in the water and comes down at a position of the test vessel, a trigger pressure pulse is generated at the bottom of the test tube. Local transient pressures along the tube are measured by piezo pressure transducers. The following items were investigated in the experiment; 1) The criteria to cause a vapor explosion, 2) Transient behaviors and propagation characteristics of pressure wave in the mixing region. 3) Effects of triggering pulse, injection temperature and mass of hot molten metal on the peak pressure. The probability of the vapor explosion jumped when the interface temperature at the molten metal-water direct contact is higher than the homogeneous nucleation temperature of water and the triggering pulse becomes larger than 0.9MPa. Two types of the pressure propagation modes are observed, one is the detonative mode with a sharp rise and other is usual pressure mode with a mild rise. (author)

  16. Fractionation of families of major, minor, and trace metals across the melt-vapor interface in volcanic exhalations

    Science.gov (United States)

    Hinkley, T.K.; Le Cloarec, M.-F.; Lambert, G.

    1994-01-01

    Chemical families of metals fractionate systematically as they pass from a silicate melt across the interface with the vapor phase and on into a cooled volcanic plume. We measured three groups of metals in a small suite of samples collected on filters from the plumes of Kilauea (Hawaii, USA), Etna (Sicily), and Merapi (Java) volcanoes. These were the major, minor, and trace metals of the alkali and alkaline earth families (K, Rb, Cs, Ca, Sr, Ba), a group of ordinarily rare metals (Cd, Cu, In, Pb, Tl) that are related by their chalcophile affinities, and the radon daughter nuclides 210Po, 210Bi, and 210Pb. The measurements show the range and some details of systematic melt-vapor fractionation within and between these groups of metals. In the plumes of all three volcanoes, the alkali metals are much more abundant than the alkaline earth metals. In the Kilauea plume, the alkali metals are at least six times more abundant than the alkaline earth metals, relative to abundances in the melt; at Etna, the factor is at least 300. Fractionations within each family are, commonly, also distinctive; in the Kilauea plume, in addition to the whole alkaline earth family being depleted, the heaviest metals of the family (Sr, Ba) are progressively more depleted than the light metal Ca. In plumes of fumaroles at Merapi, K/Cs ratios were approximately three orders of magnitude smaller than found in other earth materials. This may represent the largest observed enrichment of the "light ion lithophile" (LIL) metals. Changes in metal ratios were seen through the time of eruption in the plumes of Kilauea and Etna. This may reflect degree of degassing of volatiles, with which metals complex, from the magma bodies. At Kilauea, the changes in fractionation were seen over about three years; fractionation within the alkaline earth family increased, and that between the two families decreased, over that time. All of the ordinarily rare chalcophile metals measured are extremely abundant in

  17. Tuning of electrical and structural properties of indium oxide films grown by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Wang, Ch.Y.; Cimalla, V.; Romanus, H.; Kups, Th.; Niebelschuetz, M.; Ambacher, O.

    2007-01-01

    Tuning of structural and electrical properties of indium oxide (In 2 O 3 ) films by means of metal organic chemical vapor deposition is demonstrated. Phase selective growth of rhombohedral In 2 O 3 (0001) and body-centered cubic In 2 O 3 (001) polytypes on (0001) sapphire substrates was obtained by adjusting the substrate temperature and trimethylindium flow rate. The specific resistance of the as-grown films can be tuned by about two orders of magnitude by varying the growth conditions

  18. Coupling scales for modelling heavy metal vaporization from municipal solid waste incineration in a fluid bed by CFD

    Energy Technology Data Exchange (ETDEWEB)

    Soria, José, E-mail: jose.soria@probien.gob.ar [Institute for Research and Development in Process Engineering, Biotechnology and Alternative Energies (PROBIEN, CONICET – UNCo), 1400 Buenos Aires St., 8300 Neuquén (Argentina); Gauthier, Daniel; Flamant, Gilles [Processes, Materials and Solar Energy Laboratory (PROMES-CNRS, UPR 8521), 7 Four Solaire Street, Odeillo, 66120 Font-Romeu (France); Rodriguez, Rosa [Chemical Engineering Institute, National University of San Juan, 1109 Libertador (O) Avenue, 5400 San Juan (Argentina); Mazza, Germán [Institute for Research and Development in Process Engineering, Biotechnology and Alternative Energies (PROBIEN, CONICET – UNCo), 1400 Buenos Aires St., 8300 Neuquén (Argentina)

    2015-09-15

    Highlights: • A CFD two-scale model is formulated to simulate heavy metal vaporization from waste incineration in fluidized beds. • MSW particle is modelled with the macroscopic particle model. • Influence of bed dynamics on HM vaporization is included. • CFD predicted results agree well with experimental data reported in literature. • This approach may be helpful for fluidized bed reactor modelling purposes. - Abstract: Municipal Solid Waste Incineration (MSWI) in fluidized bed is a very interesting technology mainly due to high combustion efficiency, great flexibility for treating several types of waste fuels and reduction in pollutants emitted with the flue gas. However, there is a great concern with respect to the fate of heavy metals (HM) contained in MSW and their environmental impact. In this study, a coupled two-scale CFD model was developed for MSWI in a bubbling fluidized bed. It presents an original scheme that combines a single particle model and a global fluidized bed model in order to represent the HM vaporization during MSW combustion. Two of the most representative HM (Cd and Pb) with bed temperatures ranging between 923 and 1073 K have been considered. This new approach uses ANSYS FLUENT 14.0 as the modelling platform for the simulations along with a complete set of self-developed user-defined functions (UDFs). The simulation results are compared to the experimental data obtained previously by the research group in a lab-scale fluid bed incinerator. The comparison indicates that the proposed CFD model predicts well the evolution of the HM release for the bed temperatures analyzed. It shows that both bed temperature and bed dynamics have influence on the HM vaporization rate. It can be concluded that CFD is a rigorous tool that provides valuable information about HM vaporization and that the original two-scale simulation scheme adopted allows to better represent the actual particle behavior in a fluid bed incinerator.

  19. Coupling scales for modelling heavy metal vaporization from municipal solid waste incineration in a fluid bed by CFD

    International Nuclear Information System (INIS)

    Soria, José; Gauthier, Daniel; Flamant, Gilles; Rodriguez, Rosa; Mazza, Germán

    2015-01-01

    Highlights: • A CFD two-scale model is formulated to simulate heavy metal vaporization from waste incineration in fluidized beds. • MSW particle is modelled with the macroscopic particle model. • Influence of bed dynamics on HM vaporization is included. • CFD predicted results agree well with experimental data reported in literature. • This approach may be helpful for fluidized bed reactor modelling purposes. - Abstract: Municipal Solid Waste Incineration (MSWI) in fluidized bed is a very interesting technology mainly due to high combustion efficiency, great flexibility for treating several types of waste fuels and reduction in pollutants emitted with the flue gas. However, there is a great concern with respect to the fate of heavy metals (HM) contained in MSW and their environmental impact. In this study, a coupled two-scale CFD model was developed for MSWI in a bubbling fluidized bed. It presents an original scheme that combines a single particle model and a global fluidized bed model in order to represent the HM vaporization during MSW combustion. Two of the most representative HM (Cd and Pb) with bed temperatures ranging between 923 and 1073 K have been considered. This new approach uses ANSYS FLUENT 14.0 as the modelling platform for the simulations along with a complete set of self-developed user-defined functions (UDFs). The simulation results are compared to the experimental data obtained previously by the research group in a lab-scale fluid bed incinerator. The comparison indicates that the proposed CFD model predicts well the evolution of the HM release for the bed temperatures analyzed. It shows that both bed temperature and bed dynamics have influence on the HM vaporization rate. It can be concluded that CFD is a rigorous tool that provides valuable information about HM vaporization and that the original two-scale simulation scheme adopted allows to better represent the actual particle behavior in a fluid bed incinerator

  20. Aluminum Nitride Micro-Channels Grown via Metal Organic Vapor Phase Epitaxy for MEMs Applications

    Energy Technology Data Exchange (ETDEWEB)

    Rodak, L.E.; Kuchibhatla, S.; Famouri, P.; Ting, L.; Korakakis, D.

    2008-01-01

    Aluminum nitride (AlN) is a promising material for a number of applications due to its temperature and chemical stability. Furthermore, AlN maintains its piezoelectric properties at higher temperatures than more commonly used materials, such as Lead Zirconate Titanate (PZT) [1, 2], making AlN attractive for high temperature micro and nanoelectromechanical (MEMs and NEMs) applications including, but not limited to, high temperature sensors and actuators, micro-channels for fuel cell applications, and micromechanical resonators. This work presents a novel AlN micro-channel fabrication technique using Metal Organic Vapor Phase Epitaxy (MOVPE). AlN easily nucleates on dielectric surfaces due to the large sticking coefficient and short diffusion length of the aluminum species resulting in a high quality polycrystalline growth on typical mask materials, such as silicon dioxide and silicon nitride [3,4]. The fabrication process introduced involves partially masking a substrate with a silicon dioxide striped pattern and then growing AlN via MOVPE simultaneously on the dielectric mask and exposed substrate. A buffered oxide etch is then used to remove the underlying silicon dioxide and leave a free standing AlN micro-channel. The width of the channel has been varied from 5 ìm to 110 ìm and the height of the air gap from 130 nm to 800 nm indicating the stability of the structure. Furthermore, this versatile process has been performed on (111) silicon, c-plane sapphire, and gallium nitride epilayers on sapphire substrates. Reflection High Energy Electron Diffraction (RHEED), Atomic Force Microscopy (AFM), and Raman measurements have been taken on channels grown on each substrate and indicate that the substrate is influencing the growth of the AlN micro-channels on the SiO2 sacrificial layer.

  1. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Dutta, P.; Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V.; Zheng, N.; Ahrenkiel, P.; Martinez, J.

    2014-01-01

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10 7  cm −2 . Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm 2 /V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  2. Collision cross sections and equilibrium fractions of ions and atoms in metal vapor targets. Project progress report, June 1, 1979-May 31, 1980

    International Nuclear Information System (INIS)

    Morgan, T.J.

    1980-01-01

    The objective of this program is to measure atomic collision cross sections and equilibrium fractions of ions and atoms in metal vapor targets. The goal is to obtain experimental information on atomic collision processes relevant to the Magnetic Fusion Energy Program. In particular, in connection with the development of double charge exchange D - ion sources, we are measuring D - formation cross sections in alkaline-earth metal vapor targets. During the period covered in this report we have measured electron transfer cross sections for 3-40 keV D + ions and D 0 atoms in collision with calcium vapor

  3. Cross sections and equilibrium fractions of deuterium ions and atoms in metal vapors. Progress report, June 1, 1978-May 31, 1979

    International Nuclear Information System (INIS)

    Morgan, T.J.

    1979-01-01

    The purpose of this program is to measure cross sections and equilibrium fractions of deuterium ions and atoms in metal vapors. In particular, in connection with double charge exchange D - ion sources, there is concern with D - formation in alkaline-earth vapor targets. Also, in connection with possible metal vapor contamination in the system, there is concern with cross sections for high energy D + , D 0 and D - collisions with these metal vapors. Results from this research will fill in a gap in knowledge of single and double charge transfer and multiple collision processes in alkaline-earth targets and provide a better understanding of D - formation mechanisms. A list of publications is included. 6 references

  4. Reduced water vapor transmission rates of low-temperature solution-processed metal oxide barrier films via ultraviolet annealing

    Energy Technology Data Exchange (ETDEWEB)

    Park, Seonuk; Jeong, Yong Jin; Baek, Yonghwa; Kim, Lae Ho; Jang, Jin Hyuk; Kim, Yebyeol [POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784 (Korea, Republic of); An, Tae Kyu [Department of Polymer Science & Engineering, Korea National University of Transportation, 50 Daehak-Ro, Chungju (Korea, Republic of); Nam, Sooji, E-mail: sjnam15@etri.re.kr [Information Control Device Section, Electronics and Telecommunications Research Institute, Daejeon, 305-700 (Korea, Republic of); Kim, Se Hyun, E-mail: shkim97@yu.ac.kr [School of Chemical Engineering, Yeungnam University, Gyeongsan, North Gyeongsang 712-749 (Korea, Republic of); Jang, Jaeyoung, E-mail: jyjang15@hanyang.ac.kr [Department of Energy Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of); Park, Chan Eon, E-mail: cep@postech.ac.kr [POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784 (Korea, Republic of)

    2017-08-31

    Highlights: • Sol-gel-derived aluminum oxide thin films were prepared using ultraviolet (UV) annealing. • UV irradiation dramatically promoted the densification of AlO{sub x} during the annealing stage, thereby forming a close-packed AlO{sub x} film. • The resulting AlO{sub x} films deposited on polymer substrates exhibited good water vapor blocking properties with low water vapor transmission rates (WVTRs). - Abstract: Here, we report the fabrication of low-temperature sol-gel-derived aluminum oxide (AlO{sub x}) films via ultraviolet (UV) annealing and the investigation of their water vapor blocking properties by measuring the water vapor transmission rates (WVTRs). The UV annealing process induced the formation of a dense metal-oxygen-metal bond (Al-O-Al structure) at low temperatures (<200 °C) that are compatible with commercial plastic substrates. The density of the UV-annealed AlO{sub x} thin film at 180 °C was comparable to that of AlO{sub x} thin films that have been thermally annealed at 350 °C. Furthermore, the UV-annealed AlO{sub x} thin films exhibited a high optical transparency in the visible region (>99%) and good electrical insulating properties (∼10{sup −7} A/cm{sup 2} at 2 MV/cm). Finally, we confirmed that a dense AlO{sub x} thin film was successfully deposited onto the plastic substrate via UV annealing at low temperatures, leading to a substantial reduction in the WVTRs. The Ca corrosion test was used to measure the WVTRs of AlO{sub x} thin films deposited onto polyethylene naphthalate or polyimide substrates, determined to be 0.0095 g m{sup −2} day{sup −1} (25 °C, 50% relative humidity) and 0.26 g m{sup −2} day{sup −1}, respectively.

  5. Mass-spectrometric study of ion clustering in alkali-metal hydroxide vapor: cluster-ion energy and structural characteristics

    International Nuclear Information System (INIS)

    Kudin, L.S.; Butman, M.F.; Krasnov, K.S.

    1986-01-01

    Various positive and negative ions have been recorded in the equilibrium vapors from alkali-metal hydroxides: M/sup +/-/, OH - , O - , MO - , MOH - , and X/sup +/-/ (MOH)/sub n/, where X = M/sup +/-/, OH - , n = 1-6. The equilibrium constants have been measured for X/sup +/-/(MOH)/sub n/ = x/sup +/-/ + nMOH(k), n = 1-3, and the enthalpies of reaction have been determined, from which the enthalpies of formation and dissociation energies of X/sup +/-/ (MOH)/sub n/ have been calculated. The relative stabilities of the ions in the series from Na to Cs are examined

  6. An evaluation of absorption spectroscopy to monitor YBa2Cu3O7-x precursors for metal organics chemical vapor deposition processing

    International Nuclear Information System (INIS)

    Matthew Edward Thomas

    1999-01-01

    Absorption spectroscopy was evaluated as a technique to monitor the metal organics chemical vapor deposition (MOCVD) process for forming YBa 2 Cu 3 O 7-x superconducting coated conductors. Specifically, this study analyzed the feasibility of using absorption spectroscopy to monitor the MOCVD supply vapor concentrations of the organic ligand 2,2,6,6-tetramethyl-3,5-heptanedionate (TMHD) metal chelates of barium, copper, and yttrium. Ba(TMHD) 2 , Cu(TMHD) 2 , and Y(TMHD) 3 compounds have successfully been vaporized in the MOCVD processing technique to form high temperature superconducting ''coated conductors,'' a promising technology for wire fabrication. The absorption study of the barium, copper, and yttrium (TMHD) precursors was conducted in the ultraviolet wavelength region from 200nm to 400nm. To simulate the MOCVD precursor flows the Ba(TMHD) 2 , Cu(TMHD) 2 , and Y(TMHD) 3 complexes were vaporized at vacuum pressures of (0.03--10)Torr. Spectral absorption scans of each precursor were conducted to examine potential measurement wavelengths for determining vapor concentrations of each precursor via Beer's law. The experimental results show that under vacuum conditions the barium, copper, and yttrium (TMHD) precursors begin to vaporize between 90 C and 135 C, which are considerably lower vaporization temperatures than atmospheric thermal gravimetric analyses indicate. Additionally, complete vaporization of the copper and yttrium (TMHD) precursors occurred during rapid heating at temperatures between 145 C and 195 C and after heating at constant temperatures between 90 C and 125 C for approximately one hour, whereas the Ba(TMHD) 2 precursor did not completely vaporize. At constant temperatures, near constant vaporization levels for each precursor were observed for extended periods of time. Detailed spectroscopic scans at stable vaporization conditions were conducted

  7. Aerosol - assisted Chemical Vapor Deposition of Metal Oxide Structures: Zinc Oxide Rods

    Czech Academy of Sciences Publication Activity Database

    Vallejos, S.; Pizúrová, Naděžda; Čechal, J.; Grácia, I.; Cané, C.

    2017-01-01

    Roč. 2017, Č. 127 (2017), č. článku e56127. ISSN 1940-087X Institutional support: RVO:68081723 Keywords : Zinc oxide * columnar structures * rods * AACVD * non-catalyzed growth * vapor-solid mechanism Subject RIV: CA - Inorganic Chemistry OBOR OECD: Polymer science Impact factor: 1.232, year: 2016 https://www.jove.com/video/56127

  8. Water Vapor Permeation of Metal Oxide/Polymer Coated Plastic Films

    Science.gov (United States)

    Numata, Yukihiro; Oya, Toshiyuki; Kuwahara, Mitsuru; Ito, Katsuya

    Barrier performance to water vapor permeation of ceramic coated layers deposited on flexible polymer films is of great interest to food packaging, medical device packaging and flat panel display industries. In this study, a new type film in which a ceramic layer is deposited on a polymer coated film was proposed for lower water vapor permeation. It is important how to control interfacial properties between each layer and film for good barrier performance. Several kinds of polymer coated materials were prepared for changing surface free energy of the films before and after depositing the ceramic layer. The ceramic layer, which is composed of mixed material of SiO2 and Al2O3, was adopted under the same conditions. The following results were obtained; 1) Water vapor permeation is not related to the surface energy of polymer coated films, 2) After depositing the ceramic layer, however, a strong correlation is observed between the water vapor permeation and surface free energy. 3) The phenomenon is considered that the polarity of the polymer layers plays a key role in changing the structure of ceramic coated layers.

  9. Colorimetric Detection of Water Vapor Using Metal-Organic Framework Composites.

    Energy Technology Data Exchange (ETDEWEB)

    Allendorf, Mark D. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-12-01

    Purpose: Water vapor trapped in encapsulation materials or enclosed volumes leads to corrosion issues for critical NW components. Sandia National Laboratories has created a new diagnostic to indicate the presence of water in weapon systems. Impact: Component exposure to water now can be determined instantly, without need for costly, time-consuming analytical methods.

  10. Growth kinetics and mass transport mechanisms of GaN columns by selective area metal organic vapor phase epitaxy

    Science.gov (United States)

    Wang, Xue; Hartmann, Jana; Mandl, Martin; Sadat Mohajerani, Matin; Wehmann, Hergo-H.; Strassburg, Martin; Waag, Andreas

    2014-04-01

    Three-dimensional GaN columns recently have attracted a lot of attention as the potential basis for core-shell light emitting diodes for future solid state lighting. In this study, the fundamental insights into growth kinetics and mass transport mechanisms of N-polar GaN columns during selective area metal organic vapor phase epitaxy on patterned SiOx/sapphire templates are systematically investigated using various pitch of apertures, growth time, and silane flow. Species impingement fluxes on the top surface of columns Jtop and on their sidewall Jsw, as well as, the diffusion flux from the substrate Jsub contribute to the growth of the GaN columns. The vertical and lateral growth rates devoted by Jtop, Jsw and Jsub are estimated quantitatively. The diffusion length of species on the SiOx mask surface λsub as well as on the sidewall surfaces of the 3D columns λsw are determined. The influences of silane on the growth kinetics are discussed. A growth model is developed for this selective area metal organic vapor phase epitaxy processing.

  11. Evidence for the direct ejection of clusters from non-metallic solids during laser vaporization

    International Nuclear Information System (INIS)

    Bloomfield, L.A.; Yang, Y.A.; Xia, P.; Junkin, A.L.

    1991-01-01

    This paper reports on the formation of molecular scale particles or clusters of alkali halides and semiconductors during laser vaporization of solids. By measuring the abundances of cluster ions produced in several different source configurations, the authors have determined that clusters are ejected directly from the source sample and do not need to grow from atomic or molecular vapor. Using samples of mixed alkali halide powders, the authors have found that unalloyed clusters are easily produced in a source that prevents growth from occurring after the clusters leave the sample surface. However, melting the sample or encouraging growth after vaporization lead to the production of alloyed cluster species. The sizes of the ejected clusters are initially random, but the population spectrum quickly becomes structured as hot, unstable-sized clusters decay into smaller particles. In carbon, large clusters with odd number of atoms decay almost immediately. The hot even clusters also decay, but much more slowly. The longest lived clusters are the magic C 50 and C 60 fullerenes. The mass spectrum of large carbon clusters evolves in time from structureless, to only the even clusters, to primarily C 50 and C 60 . If cluster growth is encouraged, the odd clusters reappear and the population spectrum again becomes relatively structureless

  12. Metal-boride phase formation on tungsten carbide (WC-Co) during microwave plasma chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Johnston, Jamin M.; Catledge, Shane A., E-mail: catledge@uab.edu

    2016-02-28

    Graphical abstract: - Highlights: • A detailed phase analysis after PECVD boriding shows WCoB, CoB and/or W{sub 2}CoB{sub 2}. • EDS of PECVD borides shows boron diffusion into the carbide grain structure. • Nanoindentation hardness and modulus of borides is 23–27 GPa and 600–780 GPa. • Scratch testing shows hard coating with cracking at 40N and spallation at 70N. - Abstract: Strengthening of cemented tungsten carbide by boriding is used to improve the wear resistance and lifetime of carbide tools; however, many conventional boriding techniques render the bulk carbide too brittle for extreme conditions, such as hard rock drilling. This research explored the variation in metal-boride phase formation during the microwave plasma enhanced chemical vapor deposition process at surface temperatures from 700 to 1100 °C. We showed several well-adhered metal-boride surface layers consisting of WCoB, CoB and/or W{sub 2}CoB{sub 2} with average hardness from 23 to 27 GPa and average elastic modulus of 600–730 GPa. The metal-boride interlayer was shown to be an effective diffusion barrier against elemental cobalt; migration of elemental cobalt to the surface of the interlayer was significantly reduced. A combination of glancing angle X-ray diffraction, electron dispersive spectroscopy, nanoindentation and scratch testing was used to evaluate the surface composition and material properties. An evaluation of the material properties shows that plasma enhanced chemical vapor deposited borides formed at substrate temperatures of 800 °C, 850 °C, 900 °C and 1000 °C strengthen the material by increasing the hardness and elastic modulus of cemented tungsten carbide. Additionally, these boride surface layers may offer potential for adhesion of ultra-hard carbon coatings.

  13. Metal-boride phase formation on tungsten carbide (WC-Co) during microwave plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Johnston, Jamin M.; Catledge, Shane A.

    2016-01-01

    Graphical abstract: - Highlights: • A detailed phase analysis after PECVD boriding shows WCoB, CoB and/or W_2CoB_2. • EDS of PECVD borides shows boron diffusion into the carbide grain structure. • Nanoindentation hardness and modulus of borides is 23–27 GPa and 600–780 GPa. • Scratch testing shows hard coating with cracking at 40N and spallation at 70N. - Abstract: Strengthening of cemented tungsten carbide by boriding is used to improve the wear resistance and lifetime of carbide tools; however, many conventional boriding techniques render the bulk carbide too brittle for extreme conditions, such as hard rock drilling. This research explored the variation in metal-boride phase formation during the microwave plasma enhanced chemical vapor deposition process at surface temperatures from 700 to 1100 °C. We showed several well-adhered metal-boride surface layers consisting of WCoB, CoB and/or W_2CoB_2 with average hardness from 23 to 27 GPa and average elastic modulus of 600–730 GPa. The metal-boride interlayer was shown to be an effective diffusion barrier against elemental cobalt; migration of elemental cobalt to the surface of the interlayer was significantly reduced. A combination of glancing angle X-ray diffraction, electron dispersive spectroscopy, nanoindentation and scratch testing was used to evaluate the surface composition and material properties. An evaluation of the material properties shows that plasma enhanced chemical vapor deposited borides formed at substrate temperatures of 800 °C, 850 °C, 900 °C and 1000 °C strengthen the material by increasing the hardness and elastic modulus of cemented tungsten carbide. Additionally, these boride surface layers may offer potential for adhesion of ultra-hard carbon coatings.

  14. Metallic vapor supplying by the electron bombardment for a metallic ion production with an ECR ion source

    Energy Technology Data Exchange (ETDEWEB)

    Kitagawa, Atsushi; Sasaki, Makoto; Muramatsu, Masayuki [National Inst. of Radiological Sciences, Chiba (Japan); Jincho, Kaoru; Sasaki, Noriyuki; Sakuma, Tetsuya; Takasugi, Wataru; Yamamoto, Mitsugu [Accelerator Engineering Corporation, Chiba (Japan)

    2001-11-19

    To produce the metallic ion beam for the injection into the Heavy Ion Medical Accelerator in Chiba (HIMAC) at the National Institute of Radiological Sciences (NIRS), a new gas supply method has been developed for an 18 GHz ECR ion source (NIRS-HEC). A metallic target rod at a high positive potential is melted by the electron bombardment technique. The evaporated gas with a maximum flow rate of 50A/sec is supplied into the ECR plasma in case of Fe metal. (author)

  15. Metallic vapor supplying by the electron bombardment for a metallic ion production with an ECR ion source

    International Nuclear Information System (INIS)

    Kitagawa, Atsushi; Sasaki, Makoto; Muramatsu, Masayuki; Jincho, Kaoru; Sasaki, Noriyuki; Sakuma, Tetsuya; Takasugi, Wataru; Yamamoto, Mitsugu

    2001-01-01

    To produce the metallic ion beam for the injection into the Heavy Ion Medical Accelerator in Chiba (HIMAC) at the National Institute of Radiological Sciences (NIRS), a new gas supply method has been developed for an 18 GHz ECR ion source (NIRS-HEC). A metallic target rod at a high positive potential is melted by the electron bombardment technique. The evaporated gas with a maximum flow rate of 50A/sec is supplied into the ECR plasma in case of Fe metal. (author)

  16. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, P., E-mail: pdutta2@central.uh.edu; Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V. [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204 (United States); Zheng, N.; Ahrenkiel, P. [Department of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, South Dakota 57701 (United States); Martinez, J. [Materials Evaluation Laboratory, NASA Johnson Space Center, Houston, Texas 77085 (United States)

    2014-09-01

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10{sup 7 }cm{sup −2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  17. Coupling scales for modelling heavy metal vaporization from municipal solid waste incineration in a fluid bed by CFD.

    Science.gov (United States)

    Soria, José; Gauthier, Daniel; Flamant, Gilles; Rodriguez, Rosa; Mazza, Germán

    2015-09-01

    Municipal Solid Waste Incineration (MSWI) in fluidized bed is a very interesting technology mainly due to high combustion efficiency, great flexibility for treating several types of waste fuels and reduction in pollutants emitted with the flue gas. However, there is a great concern with respect to the fate of heavy metals (HM) contained in MSW and their environmental impact. In this study, a coupled two-scale CFD model was developed for MSWI in a bubbling fluidized bed. It presents an original scheme that combines a single particle model and a global fluidized bed model in order to represent the HM vaporization during MSW combustion. Two of the most representative HM (Cd and Pb) with bed temperatures ranging between 923 and 1073K have been considered. This new approach uses ANSYS FLUENT 14.0 as the modelling platform for the simulations along with a complete set of self-developed user-defined functions (UDFs). The simulation results are compared to the experimental data obtained previously by the research group in a lab-scale fluid bed incinerator. The comparison indicates that the proposed CFD model predicts well the evolution of the HM release for the bed temperatures analyzed. It shows that both bed temperature and bed dynamics have influence on the HM vaporization rate. It can be concluded that CFD is a rigorous tool that provides valuable information about HM vaporization and that the original two-scale simulation scheme adopted allows to better represent the actual particle behavior in a fluid bed incinerator. Copyright © 2015 Elsevier Ltd. All rights reserved.

  18. Sub-Shot-Noise Magnetometry with a Correlated Spin-Relaxation Dominated Alkali-Metal Vapor

    International Nuclear Information System (INIS)

    Kominis, I. K.

    2008-01-01

    Spin noise sets fundamental limits to the precision of measurements using spin-polarized atomic vapors, such as performed with sensitive atomic magnetometers. Spin squeezing offers the possibility to extend the measurement precision beyond the standard quantum limit of uncorrelated atoms. Contrary to current understanding, we show that, even in the presence of spin relaxation, spin squeezing can lead to a significant reduction of spin noise, and hence an increase in magnetometric sensitivity, for a long measurement time. This is the case when correlated spin relaxation due to binary alkali-atom collisions dominates independently acting decoherence processes, a situation realized in thermal high atom-density magnetometers and clocks

  19. Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

    KAUST Repository

    Li, Henan; Li, Peng; Huang, Jing Kai; Li, Ming-yang; Yang, Chih-Wen; Shi, Yumeng; Zhang, Xixiang; Li, Lain-Jong

    2016-01-01

    Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer

  20. Nanoscale leakage current measurements in metal organic chemical vapor deposition crystalline SrTiO3 films

    International Nuclear Information System (INIS)

    Rozier, Y.; Gautier, B.; Hyvert, G.; Descamps, A.; Plossu, C.; Dubourdieu, C.; Ducroquet, F.

    2009-01-01

    The properties of SrTiO 3 thin films, grown by liquid injection metal organic chemical vapor deposition on Si/SiO 2 , using a mixture of precursors, have been investigated at the nanoscale using an Atomic Force Microscope in the so-called Conductive Atomic Force Microscopy mode. Maps of the leakage currents with a nanometric resolution have been obtained on films elaborated at different temperatures and stoichiometries in order to discriminate the role of each parameter on the onset of leakage currents in the resulting layers. It appears that the higher the deposition temperature, the higher the leakage currents of the films. The mapping with a nanometric precision allows to show a heterogeneous behaviour of the surface with leaky grains and insulating boundaries. The study of films elaborated at the same temperature with different compositions supports the assumption that the leakage currents on Ti-rich layers are far higher than on Sr-rich layers

  1. D- production by multiple charge-transfer collisions in metal-vapor targets. [1 to 50 keV D/sup +/

    Energy Technology Data Exchange (ETDEWEB)

    Schlachter, A.S.

    1977-09-01

    A beam of D/sup -/ions can be produced by multiple charge-transfer collisions of a D/sup +/ beam in a thick metal-vapor target. Cross sections and equilibrium charge-state fractions are presented and discussed.

  2. Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

    DEFF Research Database (Denmark)

    Rozhavskaya, Mariia M.; Kukushkin, Sergey A.; Osipov, Andrey V.

    2017-01-01

    We report a novel approach for metal organic vapor phase epitaxy of (Al)GaN heterostructures on Si substrates. An approximately 90–100 nm thick SiC buffer layer is synthesized using the reaction between Si substrate and CO gas. Highresolution transmission electron microscopy reveals sharp...

  3. On the relation between the ratio of energy of vaporization to activation energy for flow and physical properties of liquid metals

    International Nuclear Information System (INIS)

    Dutt, N.V.K.; Ravikumar, Y.V.L.; Prasad, D.H.L.

    1993-01-01

    A relation between the ratio of energy of vaporization (Esub(vap) to the activation energy for flow (Esub(vis)) and the ratio of melting point (T m ) to the critical temperature (T c ) has been developed for liquid metals, and is shown to be superior to the examinations from Eyring theory. (author). 12 refs

  4. Low temperature metal free growth of graphene on insulating substrates by plasma assisted chemical vapor deposition

    Science.gov (United States)

    Muñoz, R.; Munuera, C.; Martínez, J. I.; Azpeitia, J.; Gómez-Aleixandre, C.; García-Hernández, M.

    2017-03-01

    Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650 °C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

  5. The effect of electrostatic field on the rate of metal vaporization

    International Nuclear Information System (INIS)

    Tsirlin, M.S.; Lyubimov, V.D.; Krasovskij, A.I.

    1982-01-01

    Evaporation kinetics of molybdenum and tungsten filaments 30 and 80 μm in diameter, when vacuum constitutes 1.3x10 -1 -1.3x10 -3 Pa, the temperature is 1470 K for tungsten and 1270-1670 K for Mo and intensity is E=10 7 -10 8 V/m, has been measured. In supposition of evaporation of oxide mole-- cules from metal surface the density of molecule current of (MoO 3 ) 3 and (WO 3 ) 3 over solid (MoO 3 ) 3 and (WO 3 ) 3 is determined. It is established that the rate of molecule removal from the filament under the effect of heterogeneous electric field increases with the increase of dipole momentum of (WO 3 ) 3 and (MoO 3 ) 3 , the value of field intensity and with metal temperature decrease

  6. Fabrication of single-phase ε-GaSe films on Si(100) substrate by metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Chia-Chen; Zeng, Jia-Xian; Lan, Shan-Ming [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Uen, Wu-Yih, E-mail: uenwuyih@ms37.hinet.net [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Liao, Sen-Mao [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Yang, Tsun-Neng; Ma, Wei-Yang [Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan (China); Chang, Kuo-Jen [Chung-Shan Institute of Science and Technology, No.15, Shi Qi Zi, Gaoping Village, Longtan Township, Taoyuan County, Taiwan (China)

    2013-09-02

    Single-phase ε-gallium selenide (GaSe) films were fabricated on Si(100) substrate by metal organic chemical vapor deposition using dual-source precursors: triethylgallium (TEG) and hydrogen selenide (H{sub 2}Se) with the flow ratio of [H{sub 2}Se]/[TEG] being maintained at 1.2. In particular, an arsine (AsH{sub 3}) flow was introduced to the Si substrate before the film deposition to induce an arsenic (As)-passivation effect on the substrate. The crystalline structure of GaSe films prepared was analyzed using X-ray diffraction and the surface morphology of them was characterized by scanning electron microscopy. It was found that the film quality could be improved by the As-passivation effect. The optical properties of the films were studied by temperature dependent photoluminescence (PL) measurements. PL spectra obtained with different distributions and intensities favored for resolving the superior material quality of the films produced on the substrate with As-passivation compared to those produced on the substrate without As-passivation. The former was dominated by the excitonic emissions for the whole temperature range of 20–300 K examined, while the latter was initially dominated by the defect-related emission at 1.907 eV for a low-temperature range ≦ 80 K and then became dominated by the weak excitonic emission band instead. The ε modification of GaSe films prepared was further recognized by the Raman scattering measurements conducted at room temperature. - Highlights: • Gallium selenide (GaSe) layered structures are fabricated on Si(100) substrate. • Metal–organic chemical vapor deposition is used for film fabrication. • Arsenic-passivation effects of Si substrate on the GaSe film quality are analyzed. • Photoluminescence measurements of GaSe polycrystals are reported.

  7. Theoretical Investigation of the Structural Stabilities of Ceria Surfaces and Supported Metal Nanocluster in Vapor and Aqueous Phases

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Zhibo [State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China; Institute for Integrated Catalysis, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Liu, Ning [State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China; Institute for Integrated Catalysis, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Chen, Biaohua [State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China; Li, Jianwei [State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China; Mei, Donghai [Institute for Integrated Catalysis, Pacific Northwest National Laboratory, Richland, Washington 99352, United States

    2018-01-25

    Understanding the structural stability and dynamics at the interface between the solid metal oxide and aqueous phase is significant in a variety of industrial applications including heterogeneous catalysis and environmental remediation. In the present work, the stabilities of three low-index ceria (CeO2) surfaces, i.e., (111), (110) and (100) in vapor and aqueous phases were studied using ab initio molecular dynamics simulations and density functional theory (DFT) calculations. Gibbs surface free energies as a function of temperature, water partial pressure, and water coverages were calculated using DFT based atomistic thermodynamic approach. On the basis of surface free energies, the morphology and exposed surface structures of the CeO2 nanoparticle were predicted using Wulff construction principle. It is found that the partially hydroxylated (111) and (100) are two major surface structures of CeO2 nanoparticles in vapor phase at ambient temperature (300 K). As the temperature increases, the fully dehydrated (111) surface gradually becomes the most dominant surface structure. While in aqueous phase, the exposed surface of the CeO2 nanoparticle is dominated by the hydroxylated (110) structure at 393 K. Finally, the morphology and stability of a cuboctahedron Pt13 nanocluster supported on CeO2 surfaces in both gas and aqueous phases were investigated. In gas phase, the supported Pt13 nanocluster has the tendency to wetting the CeO2 surface due to the strong metal-support interaction. The calculated interaction energies suggest the CeO2(110) surface provides the best stability for the Pt13 nanocluster. The CeO2 supported Pt13 nanoclusters are oxidized. Compared to the gas phase, the morphology of the CeO2 supported Pt13 nanocluster is less distorted due to the solvation effect provided by surrounding water molecules in aqueous phase. More electrons are transferred from the Pt13 nanocluster to the CeO2 support, implying the supported Pt13 nanocluster is further

  8. Growth dynamics of carbon-metal particles and nanotubes synthesized by CO2 laser vaporization

    Science.gov (United States)

    Kokai, F.; Takahashi, K.; Yudasaka, M.; Iijima, S.

    To study the growth of carbon-Co/Ni particles and single-wall carbon nanotubes (SWNTs) by 20 ms CO2 laser-pulse irradiation of a graphite-Co/Ni (1.2 at.%) target in an Ar gas atmosphere (600 Torr), we used emission imaging spectroscopy and shadowgraphy with a temporal resolution of 1.67 ms. Wavelength-selected emission images showed that C2 emission was strong in the region close to the target (within 2 cm), while for the same region the blackbody radiation from the large clusters or particles increased with increasing distance from the target. Shadowgraph images showed that the viscous flow of carbon and metal species formed a mushroom or a turbulent cloud spreading slowly into the Ar atmosphere, indicating that particles and SWNTs continued to grow as the ejected material cooled. In addition, emission imaging spectroscopy at 1200 °C showed that C2 and hot clusters and particles with higher emission intensities were distributed over much wider areas. We discuss the growth dynamics of the particles and SWNTs through the interaction of the ambient Ar with the carbon and metal species released from the target by the laser pulse.

  9. Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

    Directory of Open Access Journals (Sweden)

    Tyagi Renu

    2009-01-01

    Full Text Available Abstract Self-assembled InAs quantum dots (QDs were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs. The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.

  10. Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors

    Directory of Open Access Journals (Sweden)

    Konrad Maier

    2015-09-01

    Full Text Available In this work the low temperature response of metal oxide semiconductor gas sensors is analyzed. Important characteristics of this low-temperature response are a pronounced selectivity to acid- and base-forming gases and a large disparity of response and recovery time constants which often leads to an integrator-type of gas response. We show that this kind of sensor performance is related to the trend of semiconductor gas sensors to adsorb water vapor in multi-layer form and that this ability is sensitively influenced by the surface morphology. In particular we show that surface roughness in the nanometer range enhances desorption of water from multi-layer adsorbates, enabling them to respond more swiftly to changes in the ambient humidity. Further experiments reveal that reactive gases, such as NO2 and NH3, which are easily absorbed in the water adsorbate layers, are more easily exchanged across the liquid/air interface when the humidity in the ambient air is high.

  11. Boron-doped zinc oxide thin films for large-area solar cells grown by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Chen, X.L.; Xu, B.H.; Xue, J.M.; Zhao, Y.; Wei, C.C.; Sun, J.; Wang, Y.; Zhang, X.D.; Geng, X.H.

    2007-01-01

    Boron-doped zinc oxide (ZnO:B) films were grown by metal organic chemical vapor deposition using diethylzinc (DEZn), and H 2 O as reactant gases and diborane (B 2 H 6 ) as an n-type dopant gas. The structural, electrical and optical properties of ZnO films doped at different B 2 H 6 flow rates were investigated. X-ray diffraction spectra and scanning electron microscopy images indicate that boron-doping plays an important role on the microstructure of ZnO films, which induced textured morphology. With optimized conditions, low sheet resistance (∼ 30 Ω/□), high transparency (> 85% in the visible light and infrared range) and high mobility (17.8 cm 2 V -1 s -1 ) were obtained for 700-nm ZnO:B films deposited on 20 cm x 20 cm glass substrates at the temperature of 443 K. After long-term exposure in air, the ZnO:B films also showed a better electrical stability than the un-doped samples. With the application of ZnO:B/Al back contacts, the short circuit current density was effectively enhanced by about 3 mA/cm 2 for a small area a-Si:H cell and a high efficiency of 9.1% was obtained for a large-area (20 cm x 20 cm) a-Si solar module

  12. Selective epitaxial growth of Ge1-xSnx on Si by using metal-organic chemical vapor deposition

    Science.gov (United States)

    Washizu, Tomoya; Ike, Shinichi; Inuzuka, Yuki; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki

    2017-06-01

    Selective epitaxial growth of Ge and Ge1-xSnx layers on Si substrates was performed by using metal-organic chemical vapor deposition (MOCVD) with precursors of tertiary-butyl-germane (t-BGe) and tri-butyl-vinyl-tin (TBVSn). We investigated the effects of growth temperature and total pressure during growth on the selectivity and the crystallinity of the Ge and Ge1-xSnx epitaxial layers. Under low total pressure growth conditions, the dominant mechanism of the selective growth of Ge epitaxial layers is the desorption of the Ge precursors. At a high total pressure case, it is needed to control the surface migration of precursors to realize the selectivity because the desorption of Ge precursors was suppressed. The selectivity of Ge growth was improved by diffusion of the Ge precursors on the SiO2 surfaces when patterned substrates were used at a high total pressure. The selective epitaxial growth of Ge1-xSnx layer was also realized using MOCVD. We found that the Sn precursors less likely to desorb from the SiO2 surfaces than the Ge precursors.

  13. Metal carbonyl vapor generation coupled with dielectric barrier discharge to avoid plasma quench for optical emission spectrometry.

    Science.gov (United States)

    Cai, Yi; Li, Shao-Hua; Dou, Shuai; Yu, Yong-Liang; Wang, Jian-Hua

    2015-01-20

    The scope of dielectric barrier discharge (DBD) microplasma as a radiation source for optical emission spectrometry (OES) is extended by nickel carbonyl vapor generation. We proved that metal carbonyl completely avoids the extinguishing of plasma, and it is much more suitable for matching the DBD excitation and OES detection with respect to significant DBD quenching by concomitant hydrogen when hydride generation is used. A concentric quartz UV reactor allows sample solution to flow through the central channel wherein to efficiently receive the uniformly distributed UV irradiation in the confined cylindrical space between the concentric tubes, which facilitates effective carbonyl generation in a nickel solution. The carbonyl is transferred into the DBD excitation chamber by an argon stream for nickel excitation, and the characteristic emission of nickel at 232.0 nm is detected by a charge-coupled device (CCD) spectrometer. A 1.0 mL sample solution results in a linear range of 5-100 μg L(-1) along with a detection limit of 1.3 μg L(-1) and a precision of 2.4% RSD at 50 μg L(-1). The present DBD-OES system is validated by nickel in certified reference materials.

  14. Preparation of Hydrophobic Metal-Organic Frameworks via Plasma Enhanced Chemical Vapor Deposition of Perfluoroalkanes for the Removal of Ammonia

    Science.gov (United States)

    DeCoste, Jared B.; Peterson, Gregory W.

    2013-01-01

    Plasma enhanced chemical vapor deposition (PECVD) of perfluoroalkanes has long been studied for tuning the wetting properties of surfaces. For high surface area microporous materials, such as metal-organic frameworks (MOFs), unique challenges present themselves for PECVD treatments. Herein the protocol for development of a MOF that was previously unstable to humid conditions is presented. The protocol describes the synthesis of Cu-BTC (also known as HKUST-1), the treatment of Cu-BTC with PECVD of perfluoroalkanes, the aging of materials under humid conditions, and the subsequent ammonia microbreakthrough experiments on milligram quantities of microporous materials. Cu-BTC has an extremely high surface area (~1,800 m2/g) when compared to most materials or surfaces that have been previously treated by PECVD methods. Parameters such as chamber pressure and treatment time are extremely important to ensure the perfluoroalkane plasma penetrates to and reacts with the inner MOF surfaces. Furthermore, the protocol for ammonia microbreakthrough experiments set forth here can be utilized for a variety of test gases and microporous materials. PMID:24145623

  15. Effect of gas flow on the selective area growth of gallium nitride via metal organic vapor phase epitaxy

    Science.gov (United States)

    Rodak, L. E.; Kasarla, K. R.; Korakakis, D.

    2007-08-01

    The effect of gas flow on the selective area growth (SAG) of gallium nitride (GaN) grown via metal organic vapor phase epitaxy (MOVPE) has been investigated. In this study, the SAG of GaN was carried out on a silicon dioxide striped pattern along the GaN direction. SAG was initiated with the striped pattern oriented parallel and normal to the incoming gas flow in a horizontal reactor. The orientation of the pattern did not impact cross section of the structure after re-growth as both orientations resulted in similar trapezoidal structures bounded by the (0 0 0 1) and {1 1 2¯ n} facets ( n≈1.7-2.2). However, the growth rates were shown to depend on the orientation of the pattern as the normally oriented samples exhibited enhanced vertical and cross-sectional growth rates compared to the parallel oriented samples. All growths occurred under identical conditions and therefore the difference in growth rates must be attributed to a difference in mass transport of species.

  16. (abstract) Experimental and Modeling Studies of the Exchange Current at the Alkali Beta'-Alumina/Porous Electrode/Alkali Metal Vapor Three Phase Boundary

    Science.gov (United States)

    Williams, R. M.; Jeffries-Nakamura, B.; Ryan, M. A.; Underwood, M. L.; O'Connor, D.; Kikkert, S.

    1993-01-01

    The microscopic mechanism of the alkali ion-electron recombination reaction at the three phase boundary zone formed by a porous metal electrode in the alkali vapor on the surface of an alkali beta'-alumina solid electrolyte (BASE) ceramic has been studied by comparison of the expected rates for the three simplest reaction mechanisms with known temperature dependent rate data; and the physical parameters of typical porous metal electrode/BASE/alkali metal vapor reaction zones. The three simplest reactions are tunneling of electrons from the alkali coated electrode to a surface bound alkali metal ion; emission of an electron from the electrode with subsequent capture by a surface bound alkali metal ion; and thermal emission of an alkali cation from the BASE and its capture on the porous metal electrode surface where it may recombine with an electron. Only the first reaction adequately accounts for both the high observed rate and its temperature dependence. New results include crude modeling of simple, one step, three phase, solid/solid/gas electrochemical reaction.

  17. The gas phase emitter effect of lanthanum within ceramic metal halide lamps and its dependence on the La vapor pressure and operating frequency

    Energy Technology Data Exchange (ETDEWEB)

    Ruhrmann, C.; Hoebing, T.; Bergner, A.; Groeger, S.; Awakowicz, P.; Mentel, J. [Electrical Engineering and Plasma Technology, Ruhr University Bochum, D-44780 Bochum (Germany); Denissen, C.; Suijker, J. [Philips Lighting, Category Professional Lamps, P.O. Box 80020, NL-5600JM Eindhoven (Netherlands)

    2015-08-07

    The gas phase emitter effect increases the lamp lifetime by lowering the work function and, with it, the temperature of the tungsten electrodes of metal halide lamps especially for lamps in ceramic vessels due to their high rare earth pressures. It is generated by a monolayer on the electrode surface of electropositive atoms of certain emitter elements, which are inserted into the lamp bulb by metal iodide salts. They are vaporized, dissociated, ionized, and deposited by an emitter ion current onto the electrode surface within the cathodic phase of lamp operation with a switched-dc or ac-current. The gas phase emitter effect of La and the influence of Na on the emitter effect of La are studied by spatially and phase-resolved pyrometric measurements of the electrode tip temperature, La atom, and ion densities by optical emission spectroscopy as well as optical broadband absorption spectroscopy and arc attachment images by short time photography. An addition of Na to the lamp filling increases the La vapor pressure within the lamp considerably, resulting in an improved gas phase emitter effect of La. Furthermore, the La vapor pressure is raised by a heating of the cold spot. In this way, conditions depending on the La vapor pressure and operating frequency are identified, at which the temperature of the electrodes becomes a minimum.

  18. Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Kappera, Rajesh; Voiry, Damien; Jen, Wesley; Acerce, Muharrem; Torrel, Sol; Chhowalla, Manish, E-mail: manish1@rci.rutgers.edu [Materials Science and Engineering, Rutgers University, 607 Taylor Road, Piscataway, New Jersey 08854 (United States); Yalcin, Sibel Ebru; Branch, Brittany; Gupta, Gautam; Mohite, Aditya D. [MPA-11 Materials Synthesis and Integrated Devices, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Lei, Sidong; Chen, Weibing; Najmaei, Sina; Lou, Jun; Ajayan, Pulickel M. [Mechanical Engineering and Materials Science Department, Rice University, Houston, Texas 77005 (United States)

    2014-09-01

    Two dimensional transition metal dichalcogenides (2D TMDs) offer promise as opto-electronic materials due to their direct band gap and reasonably good mobility values. However, most metals form high resistance contacts on semiconducting TMDs such as MoS{sub 2}. The large contact resistance limits the performance of devices. Unlike bulk materials, low contact resistance cannot be stably achieved in 2D materials by doping. Here we build on our previous work in which we demonstrated that it is possible to achieve low contact resistance electrodes by phase transformation. We show that similar to the previously demonstrated mechanically exfoliated samples, it is possible to decrease the contact resistance and enhance the FET performance by locally inducing and patterning the metallic 1T phase of MoS{sub 2} on chemically vapor deposited material. The device properties are substantially improved with 1T phase source/drain electrodes.

  19. A study on vapor explosions

    International Nuclear Information System (INIS)

    Takagi, N.; Shoji, M.

    1979-01-01

    An experimental study was carried out for vapor explosions of molten tin falling in water. For various initial metal temperatures and subcooling of water, transient pressure of the explosions, relative frequency of the explosions and the position where the explosions occur were measured in detail. The influence of ambient pressure was also investigated. From the results, it was concluded that the vapor explosion is closely related to the collapse of a vapor film around the molten metal. (author)

  20. Characterizations of arsenic-doped zinc oxide films produced by atmospheric metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Weng, Li-Wei, E-mail: onlyway54@hotmail.com [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Uen, Wu-Yih, E-mail: uenwuyih@ms37.hinet.net [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Lan, Shan-Ming; Liao, Sen-Mao [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Yang, Tsun-Neng; Wu, Chih-Hung; Hong, Hwe-Fen; Ma, Wei-Yang [Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan (China); Shen, Chin-Chang [Chemical Engineering Division, Institute of Nuclear Energy Research, Longtan Township, Taoyuan 32546, Taiwan (China)

    2013-07-15

    p-type ZnO films were prepared by atmospheric metal-organic chemical vapor deposition technique using arsine (AsH{sub 3}) as the doping source. The electrical and optical properties of arsenic-doped ZnO (ZnO:As) films fabricated at 450–600 °C with various AsH{sub 3} flow rates ranging from 8 to 21.34 μmol/min were analyzed and compared. Hall measurements indicate that stable p-type ZnO films with hole concentrations varying from 7.2 × 10{sup 15} to 5.8 × 10{sup 18} cm{sup −3} could be obtained. Besides, low temperature (17 K) photoluminescence spectra of all ZnO:As films also demonstrate the dominance of the line related to the neutral acceptor-bound exciton. Moreover, the elemental identity and chemical bonding information for ZnO:As films were examined by X-ray photoelectron spectroscopy. Based on the results obtained, the effects of doping conditions on the mechanism responsible for the p-type conduction were studied. Conclusively, a simple technique to fabricate good-quality p-type ZnO films has been recognized in this work. Depositing the film at 550 °C with an AsH{sub 3} flow rate of 13.72 μmol/min is appropriate for producing hole concentrations on the order of 10{sup 17} cm{sup −3} for it. Ultimately, by increasing the AsH{sub 3} flow rate to 21.34 μmol/min for doping and depositing the film at 600 °C, ZnO:As films with a hole concentration over 5 × 10{sup 18} cm{sup −3} together with a mobility of 1.93 cm{sup 2}V{sup −1} s{sup −1} and a resistivity of 0.494 ohm-cm can be achieved.

  1. Mercury uptake in vivo by normal and acatalasemic mice exposed to metallic mercury vapor (203Hg degrees) and injected with metallic mercury or mercuric chloride (203HgCl2)

    International Nuclear Information System (INIS)

    Ogata, M.; Kenmotsu, K.; Hirota, N.; Meguro, T.; Aikoh, H.

    1985-01-01

    Levels of mercury in the brain and liver of acatalasemic mice immediately following exposure to metallic mercury vapor or injection of metallic mercury were higher than those found in normal mice. Acatalasemic mice had decreased levels of mercury in the blood and kidneys when the levels were compared with those of normal mice, which indicated that catalase plays a role in oxidizing and taking up mercury. Thus, the brain/blood or liver/blood ratio of mercury concentration in acatalasemic mice was significantly higher than that of normal mice. These results suggest that metallic mercury in the blood easily passed through the blood-brain or blood-liver barrier. The levels of mercury distribution to the kidneys of normal and acatalasemic mice, 1 hr after injection of mercuric chloride solution, were higher than that of normal and acatalasemic mice, respectively, 1 hr after injection of metallic mercury

  2. High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

    Science.gov (United States)

    Cao, Y.; Chu, R.; Li, R.; Chen, M.; Chang, R.; Hughes, B.

    2016-02-01

    Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 1015 cm-3 and 3 × 1019 cm-3. Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-μm drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.

  3. Homostructured ZnO-based metal-oxide-semiconductor field-effect transistors deposited at low temperature by vapor cooling condensation system

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Tzu-Shun [Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, 701 Tainan, Taiwan, ROC (China); Lee, Ching-Ting, E-mail: ctlee@ee.ncku.edu.tw [Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, 701 Tainan, Taiwan, ROC (China); Institute of Microelectronics, Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, 701 Tainan, Taiwan, ROC (China)

    2015-11-01

    Highlights: • The vapor cooling condensation system was designed and used to deposit homostructured ZnO-based metal-oxide-semiconductor field-effect transistors. • The resulting homostructured ZnO-based MOSFETs operated at a reverse voltage of −6 V had a very low gate leakage current of 24 nA. • The associated I{sub DSS} and the g{sub m(max)} were 5.64 mA/mm and 1.31 mS/mm, respectively. - Abstract: The vapor cooling condensation system was designed and used to deposit homostructured ZnO-based metal-oxide-semiconductor field-effect transistors (MOSFETs) on sapphire substrates. Owing to the high quality of the deposited, various ZnO films and interfaces, the resulting MOSFETs manifested attractive characteristics, such as the low gate leakage current of 24 nA, the low average interface state density of 2.92 × 10{sup 11} cm{sup −2} eV{sup −1}, and the complete pinch-off performance. The saturation drain–source current, the maximum transconductance, and the gate voltage swing of the resulting homostructured ZnO-based MOSFETs were 5.64 mA/mm, 1.31 mS/mm, and 3.2 V, respectively.

  4. Metallic Contact Formation for Molecular Electronics : Interactions between Vapor-Deposited Metals and Self-Assembled Monolayers of Conjugated Mono- and Dithiols

    NARCIS (Netherlands)

    Boer, Bert de; Frank, Martin M.; Chabal, Yves J.; Jiang, Weirong; Garfunkel, Eric; Bao, Zhenan

    2004-01-01

    We present grazing-incidence Fourier transform infrared and AFM data of Au, Al, and Ti vapor-deposited onto self-assembled monolayers (SAMs) of conjugated mono- and dithiols. SAMs of 4,4'''-dimercapto-p-quaterphenyl, 4,4''-dimercapto-p-terphenyl, and 4,4'-dimercapto-p-biphenyl have reactive thiols

  5. Examination of Organic Vapor Adsorption onto Alkali Metal and Halide Atomic Ions by using Ion Mobility Mass Spectrometry.

    Science.gov (United States)

    Maiβer, Anne; Hogan, Christopher J

    2017-11-03

    We utilize ion mobility mass spectrometry with an atmospheric pressure differential mobility analyzer coupled to a time-of-flight mass spectrometer (DMA-MS) to examine the formation of ion-vapor molecule complexes with seed ions of K + , Rb + , Cs + , Br - , and I - exposed to n-butanol and n-nonane vapor under subsaturated conditions. Ion-vapor molecule complex formation is indicated by a shift in the apparent mobility of each ion. Measurement results are compared to predicted mobility shifts based upon the Kelvin-Thomson equation, which is commonly used in predicting rates of ion-induced nucleation. We find that n-butanol at saturation ratios as low as 0.03 readily binds to all seed ions, leading to mobility shifts in excess of 35 %. Conversely, the binding of n-nonane is not detectable for any ion for saturation ratios in the 0-0.27 range. An inverse correlation between the ionic radius of the initial seed and the extent of n-butanol uptake is observed, such that at elevated n-butanol concentrations, the smallest ion (K + ) has the smallest apparent mobility and the largest (I - ) has the largest apparent mobility. Though the differences in behavior of the two vapor molecules types examined and the observed effect of ionic seed radius are not accounted for by the Kelvin-Thomson equation, its predictions are in good agreement with measured mobility shifts for Rb + , Cs + , and Br - in the presence of n-butanol (typically within 10 % of measurements). © 2017 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

  6. Method for producing metallic nanoparticles

    Science.gov (United States)

    Phillips, Jonathan; Perry, William L.; Kroenke, William J.

    2004-02-10

    Method for producing metallic nanoparticles. The method includes generating an aerosol of solid metallic microparticles, generating non-oxidizing plasma with a plasma hot zone at a temperature sufficiently high to vaporize the microparticles into metal vapor, and directing the aerosol into the hot zone of the plasma. The microparticles vaporize in the hot zone to metal vapor. The metal vapor is directed away from the hot zone and to the plasma afterglow where it cools and condenses to form solid metallic nanoparticles.

  7. Effect of the substrate on the properties of ZnO-MgO thin films grown by atmospheric pressure metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Torres-Huerta, A.M., E-mail: atohuer@hotmail.com [Instituto Politecnico Nacional, Grupo de Ingenieria en Procesamiento de Materiales CICATA-IPN, Unidad Altamira, km 14.5, Carretera Tampico-Puerto Industrial Altamira. C. P. 89600, Altamira, Tamps (Mexico); Dominguez-Crespo, M.A. [Instituto Politecnico Nacional, Grupo de Ingenieria en Procesamiento de Materiales CICATA-IPN, Unidad Altamira, km 14.5, Carretera Tampico-Puerto Industrial Altamira. C. P. 89600, Altamira, Tamps (Mexico); Brachetti-Sibaja, S.B. [Alumna del postgrado en Tecnologia Avanzada del CICATA-IPN, Unidad Altamira IPN, km 14.5, Carretera Tampico-Puerto Industrial Altamira. C. P. 89600, Altamira, Tamps (Mexico); Arenas-Alatorre, J. [Instituto de Fisica, UNAM, Apartado Postal 20-364, 01000, D.F. (Mexico); Rodriguez-Pulido, A. [Unidad Profesional Adolfo Lopez Mateos, Luis Enrique Erro s/n, 07738, D. F. (Mexico)

    2011-07-01

    The ZnO-MgO alloys possess attractive properties for possible applications in optoelectronic and display devices; however, the optical properties are strongly dependent on the deposition parameters. In this work, the effect of the glassy and metallic substrates on the structural, morphological and optical properties of ZnO-MgO thin films using atmospheric pressure metal-organic chemical vapor deposition was investigated at relatively low deposition temperature, 500 deg. C. Magnesium and zinc acetylacetonates were used as the metal-organic source. X-ray diffraction experiments provided evidence that the kind of substrates cause a deviation of c-axis lattice constant due to the constitution of a oxide mixture (ZnO and MgO) in combination with different intermetallic compounds(Mg{sub 2}Zn{sub 11} and Mg{sub 4}Zn{sub 7}) in the growth films. The substitutional and interstitial sites of Mg{sup 2+} instead of Zn{sup 2+} ions in the lattice are the most probable mechanism to form intermetallic compounds. The optical parameters as well as thickness of the films were calculated by Spectroscopic Ellipsometry using the classical dispersion model based on the sum of the single and double Lorentz and Drude oscillators in combination with Kato-Adachi equations, as well as X-ray reflectivity.

  8. Self-Catalyzed Growth and Characterization of In(As)P Nanowires on InP(111)B Using Metal-Organic Chemical Vapor Deposition.

    Science.gov (United States)

    Park, Jeung Hun; Pozuelo, Marta; Setiawan, Bunga P D; Chung, Choong-Heui

    2016-12-01

    We report the growth of vertical -oriented InAs x P1-x (0.11 ≤ x ≤ 0.27) nanowires via metal-organic chemical vapor deposition in the presence of indium droplets as catalysts on InP(111)B substrates at 375 °C. Trimethylindium, tertiarybutylphosphine, and tertiarybutylarsine are used as the precursors, corresponding to P/In and As/In molar ratios of 29 and 0.01, respectively. The as-grown nanowire growth morphologies, crystallinity, composition, and optical characteristics are determined using a combination of scanning and transmission electron microscopies, electron diffraction, and X-ray photoelectron, energy dispersive X-ray, and Raman spectroscopies. We find that the InAs x P1-x nanowires are tapered with narrow tops, wider bases, and In-rich In-As alloy tips, characteristic of vapor-liquid-solid process. The wires exhibit a mixture of zinc blende and wurtzite crystal structures and a high density of structural defects such as stacking faults and twins. Our results suggest that the incorporation of As into InP wires decreases with increasing substrate temperature. The Raman spectra obtained from the In(As)P nanowires reveal a red-shift and lower intensity of longitudinal optical mode relative to both InP nanowires and InP(111)B bulk, due to the incorporation of As into the InP matrix.

  9. Cu-Al alloy formation by thermal annealing of Cu/Al multilayer films deposited by cyclic metal organic chemical vapor deposition

    Science.gov (United States)

    Moon, Hock Key; Yoon, Jaehong; Kim, Hyungjun; Lee, Nae-Eung

    2013-05-01

    One of the most important issues in future Cu-based interconnects is to suppress the resistivity increase in the Cu interconnect line while decreasing the line width below 30 nm. For the purpose of mitigating the resistivity increase in the nanoscale Cu line, alloying Cu with traces of other elements is investigated. The formation of a Cu alloy layer using chemical vapor deposition or electroplating has been rarely studied because of the difficulty in forming Cu alloys with elements such as Al. In this work, Cu-Al alloy films were successfully formed after thermal annealing of Cu/Al multilayers deposited by cyclic metal-organic chemical vapor deposition (C-MOCVD). After the C-MOCVD of Cu/Al multilayers without gas phase reaction between the Cu and Al precursors in the reactor, thermal annealing was used to form Cu-Al alloy films with a small Al content fraction. The resistivity of the alloy films was dependent on the Al precursor delivery time and was lower than that of the aluminum-free Cu film. No presence of intermetallic compounds were detected in the alloy films by X-ray diffraction measurements and transmission electron spectroscopy.

  10. Epitaxial Pb(Mg1/3Nb2/3)O3 thin films synthesized by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Bai, G. R.; Streiffer, S. K.; Baumann, P. K.; Auciello, O.; Ghosh, K.; Stemmer, S.; Munkholm, A.; Thompson, Carol; Rao, R. A.; Eom, C. B.

    2000-01-01

    Metal-organic chemical vapor deposition was used to prepare Pb(Mg 1/3 Nb 2/3 )O 3 (PMN) thin films on (001) SrTiO 3 and SrRuO 3 /SrTiO 3 substrates, using solid Mg β-diketonate as the Mg precursor. Parameters including the precursor ratio in the vapor phase, growth temperature, growth rate, and reaction pressure in the reactor chamber were varied in order to determine suitable growth conditions for producing phase-pure, epitaxial PMN films. A cube-on-cube orientation relationship between the thin film and the SrTiO 3 substrate was found, with a (001) rocking curve width of 0.1 degree sign , and in-plane rocking-curve width of 0.8 degree sign . The root-mean-square surface roughness of a 200-nm-thick film on SrTiO 3 was 2 to 3 nm as measured by scanning probe microscopy. The zero-bias dielectric constant and loss measured at room temperature and 10 kHz for a 200-nm-thick film on SrRuO 3 /SrTiO 3 were approximately 1100 and 2%, respectively. The remnant polarization for this film was 16 μC/cm 2 . (c) 2000 American Institute of Physics

  11. Raman scattering studies of YBa2Cu3O7-x thin films grown by chemical vapor deposition and metal-organic deposition

    International Nuclear Information System (INIS)

    Lee, E.; Yoon, S.; Um, Y.M.; Jo, W.; Seo, C.W.; Cheong, H.; Kim, B.J.; Lee, H.G.; Hong, G.W.

    2007-01-01

    We present results of Raman scattering studies of superconducting YBa 2 Cu 3 O 7-x (YBCO) films grown by chemical vapor deposition and metal-organic deposition methods. It is shown by X-ray diffraction that all the as-grown YBCO films have a highly c-axis oriented and in-plane aligned texture. Raman scattering measurements were used to investigate optical phonon modes, oxygen contents, structural properties, and second-phases of the YBCO coated conductors. Raman spectra of YBCO films with lower-transport qualities exhibit additional phonon modes at ∼300 cm -1 , ∼600 cm -1 , and ∼630 cm -1 , which are related to second-phases such as Ba 2 Cu 3 O 5.9 and BaCuO 2 . Our results strongly suggest that Raman scattering be useful for optimizing YBCO film growth conditions

  12. Fabrication of 100 A class, 1 m long coated conductor tapes by metal organic chemical vapor deposition and pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, V.; Lee, H.G.; Li, Y.; Xiong, X.; Qiao, Y.; Reeves, J.; Xie, Y.; Knoll, A.; Lenseth, K

    2003-10-15

    SuperPower has been scaling up YBa{sub 2}Cu{sub 3}O{sub x}-based second-generation superconducting tapes by techniques such as pulsed laser deposition (PLD) using industrial laser and metal organic chemical vapor deposition (MOCVD). Both techniques offer advantage of high deposition rates, which is important for high throughput. Using highly-polished substrates produced in a reel-to-reel polishing facility and buffer layers deposited in a pilot ion beam assisted deposition facility, meter-long second-generation high temperature superconductor tapes have been produced. 100 A class, meter-long coated conductor tapes have been reproducibly demonstrated in this work by both MOCVD and PLD. The best results to date are 148 A over 1.06 m by MOCVD and 135 A over 1.1 m by PLD using industrial laser.

  13. The growth of mid-infrared emitting InAsSb/InAsP strained-layer superlattices using metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Biefeld, R.M.; Allerman, A.A.; Kurtz, S.R.; Burkhart, J.H.

    1997-01-01

    We describe the metal-organic chemical vapor deposition os InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500 degrees C, and 200 torr in a horizontal quartz reactor using trimethylindium, triethylantimony, AsH 3 , and PH 3 . By changing the layer thickness and composition we have prepared structures with low temperature (≤20K) photoluminescence wavelengths ranging from 3.2 to 5.0 μm. Excellent performance was observed for an SLS light emitting diode (LED) and both optically pumped and electrically injected SLS layers. An InAsSb/InAsP SLS injection laser emitted at 3.3 μm at 80 K with peak power of 100 mW

  14. Characterization of Pb(Zr, Ti)O sub 3 thin films prepared by metal-organic chemical-vapor deposition using a solid delivery system

    CERN Document Server

    Shin, J C; Hwang, C S; Kim, H J; Lee, J M

    1999-01-01

    Pb(Zr, Ti)O sub 3 (PZT) thin films were deposited on Pt/SiO sub 2 /Si substrates by metal-organic chemical-vapor deposition technique using a solid delivery system to improve the reproducibility of the deposition. The self-regulation mechanism, controlling the Pb-content of the film, was observed to work above a substrate temperature of 620 .deg. C. Even with the self-regulation mechanism, PZT films having low leakage current were obtained only when the molar mixing ratio of the input precursors was 1

  15. Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Li, Haoran; Mazumder, Baishakhi; Bonef, Bastien; Keller, Stacia; Wienecke, Steven; Speck, James S.; Denbaars, Steven P.; Mishra, Umesh K.

    2017-11-01

    In GaN/(Al,Ga)N high-electron-mobility transistors (HEMT), AlN interlayer between GaN channel and AlGaN barrier suppresses alloy scattering and significantly improves the electron mobility of the two-dimensional electron gas. While high concentrations of gallium were previously observed in Al-polar AlN interlayers grown by metal-organic chemical vapor deposition, the N-polar AlN (Al x Ga1-x N) films examined by atom probe tomography in this study exhibited aluminum compositions (x) equal to or higher than 95% over a wide range of growth conditions. The also investigated AlN interlayer in a N-polar GaN/AlN/AlGaN/ S.I. GaN HEMT structure possessed a similarly high x content.

  16. Energy Conversion Alternatives Study (ECAS), Westinghouse phase 1. Volume 7: Metal vapor Rankine topping-steam bottoming cycles. [energy conversion efficiency in electric power plants

    Science.gov (United States)

    Deegan, P. B.

    1976-01-01

    Adding a metal vapor Rankine topper to a steam cycle was studied as a way to increase the mean temperature at which heat is added to the cycle to raise the efficiency of an electric power plant. Potassium and cesium topping fluids were considered. Pressurized fluidized bed or pressurized (with an integrated low-Btu gasifier) boilers were assumed. Included in the cycles was a pressurizing gas turbine with its associated recuperator, and a gas economizer and feedwater heater. One of the ternary systems studied shows plant efficiency of 42.3% with a plant capitalization of $66.7/kW and a cost of electricity of 8.19 mills/MJ (29.5 mills/kWh).

  17. Influence of the interface on growth rates in AlN/GaN short period superlattices via metal organic vapor phase epitaxy

    Science.gov (United States)

    Rodak, L. E.; Korakakis, D.

    2011-11-01

    AlN/GaN short period superlattices are well suited for a number of applications including, but not limited to, digital alloys, intersubband devices, and emitters. In this work, AlN/GaN superlattices with periodicities ranging from 10 to 20 Å have been grown via metal organic vapor phase epitaxy in order to investigate the influence of the interface on the binary alloy growth rates. The GaN growth rate at the interface was observed to decrease with increasing GaN thickness while the AlN growth rate remained constant. This has been attributed to a decrease in the decomposition rate of GaN at the hetero-interface as seen in other III-V hetero-structures.

  18. Surfactant effects of indium on cracking in AlN/GaN distributed Bragg reflectors grown via metal organic vapor phase epitaxy

    Science.gov (United States)

    Rodak, L. E.; Miller, C. M.; Korakakis, D.

    2011-01-01

    Aluminum Nitride (AlN) and Gallium Nitride (GaN) superlattice structures are often characterized by a network of cracks resulting from the large lattice mismatch and difference in thermal expansion coefficients, especially as the thickness of the layers increases. This work investigates the influence of indium as a surfactant on strain and cracking in AlN/GaN DBRs grown via Metal Organic Vapor Phase Epitaxy (MOVPE). DBRs with peak reflectivities ranging from 465 nm to 540 nm were grown and indium was introduced during the growth of the AlN layer. Image processing techniques were used to quantify the crack length per square millimeter and it was observed that indium has a significant effect on the crack formation and reduced the total crack length in these structures by a factor of two.

  19. Measuring and predicting the dynamic effects of a confined thin metal plate pulse heated into the liquid-vapor regime

    International Nuclear Information System (INIS)

    Baxter, R.C.

    1977-01-01

    The dynamic response of a confined thin layer of lead heated rapidly and uniformly to a supercritical state was investigated. Lead targets 0.025 mm and 0.05 mm thick were contained between a thin titanium tamping layer and a thick layer of fused quartz with several different gap widths between the lead and the confining surfaces. After being heated by an electron beam for about 50 ns, lead specimens expanded to a state of approximately half liquid and half vapor. Measurements of the stress in the quartz and the velocity of the tamper produced by the expanding lead were compared with one dimensional hydrodynamic computer program predictions. Measured and predicted peak stresses in the quartz for no gaps were approximately 12 kilobars and agreed within one kilobar. Peak stresses decreased rapidly with gap size to values, at 0.02 mm gaps, of about one kilobar for the 0.025 mm lead targets and five kilobars for the 0.05 mm targets. These values were confirmed by measurements. Predictions and measurements of tamper velocity (momentum) were within 10% only when the lead and confining walls were in close contact. The observed velocities for even very small gaps were substantially below predictions. These differences are attributed primarily to separation of the liquid and vapor phases during the expansion

  20. Trace metal analysis in arctic aerosols by an inductively coupled plasma-time of flight-mass spectrometer combined with an inductively heated vaporizer

    International Nuclear Information System (INIS)

    Luedke, Christian; Skole, Jochen; Taubner, Kerstin; Kriews, Michael

    2005-01-01

    Two newly developed instruments were combined to analyze the trace metal content in size separated arctic aerosols during the measurement campaign ASTAR 2004 (Arctic Study of Tropospheric Aerosols, Clouds and Radiation 2004) at Spitsbergen in May-June 2004. The aim of this extensive aerosol measurement campaign was to obtain a database for model-calculations of arctic aerosol, which play an important role in the global climate change. The ASTAR project was centered on two aircraft measurement campaigns, scheduled from 2004 to 2005, addressing both aerosol and cloud measurements, combined with ground-based and satellite observations. In the present paper one example for the analysis of ground-based aerosol particles is described. The sampling of aerosol particles was performed in a well-known manner by impaction of the particles on cleaned graphite targets. By means of a cascade impactor eight size classes between 0.35 and 16.6 μm aerodynamic diameters were separated. To analyze the metal content in the aerosol particles the targets were rapidly heated up to 2700 deg. C in an inductively heated vaporizer system (IHVS). An argon flow transports the vaporized sample material into the inductively coupled plasma (ICP) used as ionization source for the time of flight-mass spectrometer (TOF-MS). The simultaneous extraction of the ions from the plasma, as realized in the TOF instrument, allows to obtain the full mass spectrum of the sample during the vaporization pulse without any limitation in the number of elements detected. With optimized experimental parameters the element content in arctic aerosol particles was determined in a mass range between 7 Li and 209 Bi. Comparing the size distribution of the elemental content of the aerosol particles, two different meteorological situations were verified. For calibration acidified reference solutions were placed on the cleaned target inside the IHVS. The limits of detection (LOD) for the element mass on the target range

  1. Vapor Responsive One-Dimensional Photonic Crystals from Zeolite Nanoparticles and Metal Oxide Films for Optical Sensing

    Science.gov (United States)

    Lazarova, Katerina; Awala, Hussein; Thomas, Sebastien; Vasileva, Marina; Mintova, Svetlana; Babeva, Tsvetanka

    2014-01-01

    The preparation of responsive multilayered structures with quarter-wave design based on layer-by-layer deposition of sol-gel derived Nb2O5 films and spin-coated MEL type zeolite is demonstrated. The refractive indices (n) and thicknesses (d) of the layers are determined using non-linear curve fitting of the measured reflectance spectra. Besides, the surface and cross-sectional features of the multilayered structures are characterized by scanning electron microscopy (SEM). The quasi-omnidirectional photonic band for the multilayered structures is predicted theoretically, and confirmed experimentally by reflectance measurements at oblique incidence with polarized light. The sensing properties of the multilayered structures toward acetone are studied by measuring transmittance spectra prior and after vapor exposure. Furthermore, the potential of the one-dimensional photonic crystals based on the multilayered structure consisting of Nb2O5 and MEL type zeolite as a chemical sensor with optical read-out is discussed. PMID:25010695

  2. Measuring probe and method for determining the oxygen content in gases, vapors, and liquids, especially in liquid metals

    International Nuclear Information System (INIS)

    Sundermann, H.; Andrae, U.

    1978-01-01

    The invention is concerned with the improvement of the measuring probe described in the main patent no. 1798002 with which the oxygen content in liquid metals, e.g. Na, is to be determined. In order to avoid the glass stopper shutting off the reference space having to be ground out it is proposed to connect the solid electrolyte firmly and hermetically with a metallic mounting support (e.g. Fe-Co-Ni alloy), having got the same thermal coefficient of expansion as the solid electrolyte (e.g. zirconium dioxide stabilized with ythium oxide or thorium dioxide). Further details of the design are very explicitly described. (HP) [de

  3. Metal/Carbon Hybrid Nanostructures Produced from Plasma-Enhanced Chemical Vapor Deposition over Nafion-Supported Electrochemically Deposited Cobalt Nanoparticles

    Directory of Open Access Journals (Sweden)

    Mohammad Islam

    2018-04-01

    Full Text Available In this work, we report development of hybrid nanostructures of metal nanoparticles (NP and carbon nanostructures with strong potential for catalysis, sensing, and energy applications. First, the etched silicon wafer substrates were passivated for subsequent electrochemical (EC processing through grafting of nitro phenyl groups using para-nitrobenzene diazonium (PNBT. The X-ray photoelectron spectroscope (XPS and atomic force microscope (AFM studies confirmed presence of few layers. Cobalt-based nanoparticles were produced over dip or spin coated Nafion films under different EC reduction conditions, namely CoSO4 salt concentration (0.1 M, 1 mM, reduction time (5, 20 s, and indirect or direct EC reduction route. Extensive AFM examination revealed NP formation with different attributes (size, distribution depending on electrochemistry conditions. While relatively large NP with >100 nm size and bimodal distribution were obtained after 20 s EC reduction in H3BO3 following Co2+ ion uptake, ultrafine NP (<10 nm could be produced from EC reduction in CoSO4 and H3BO3 mixed solution with some tendency to form oxides. Different carbon nanostructures including few-walled or multiwalled carbon nanotubes (CNT and carbon nanosheets were grown in a C2H2/NH3 plasma using the plasma-enhanced chemical vapor deposition technique. The devised processing routes enable size controlled synthesis of cobalt nanoparticles and metal/carbon hybrid nanostructures with unique microstructural features.

  4. Catalytic Upgrading of Biomass Fast Pyrolysis Vapors with Nano Metal Oxides: An Analytical Py-GC/MS Study

    Energy Technology Data Exchange (ETDEWEB)

    Qiang Lu [National Engineering Laboratory for Biomass Power Generation Equipment, North China Electric Power University, Beijing (China); Zhi-Fei Zhang [National Engineering Laboratory for Biomass Power Generation Equipment, North China Electric Power University, Beijing (China); Chang-Qing Dong [National Engineering Laboratory for Biomass Power Generation Equipment, North China Electric Power University, Beijing (China); Xi-Feng Zhu [Key Laboratory for Biomass Clean Energy of Anhui Province, University of Science and Technology of China, Hefei (China)

    2010-10-15

    Fast pyrolysis of poplar wood followed with catalytic cracking of the pyrolysis vapors was performed using analytical pyrolysis-gas chromatography/mass spectrometry (Py-GC/MS). The catalysts applied in this study were nano MgO, CaO, TiO2, Fe2O3, NiO and ZnO. These catalysts displayed different catalytic capabilities towards the pyrolytic products. The catalysis by CaO significantly reduced the levels of phenols and anhydrosugars, and eliminated the acids, while it increased the formation of cyclopentanones, hydrocarbons and several light compounds. ZnO was a mild catalyst, as it only slightly altered the pyrolytic products. The other four catalysts all decreased the linear aldehydes dramatically, while the increased the ketones and cyclopentanones. They also reduced the anhydrosugars, except for NiO. Moreover, the catalysis by Fe2O3 resulted in the formation of various hydrocarbons. However, none of these catalysts except CaO were able to greatly reduce the acids.

  5. Production of carbon nanotubes: Chemical vapor deposition synthesis from liquefied petroleum gas over Fe-Co-Mo tri-metallic catalyst supported on MgO

    Energy Technology Data Exchange (ETDEWEB)

    Setyopratomo, P., E-mail: puguh-sptm@yahoo.com; Wulan, Praswasti P. D. K., E-mail: wulanmakmur@gmail.com; Sudibandriyo, M., E-mail: msudib@che.ui.ac.id [Chemical Engineering Department, University of Indonesia, Depok Campus, Depok 16424 (Indonesia)

    2016-06-03

    Carbon nanotubes were produced by chemical vapor deposition method to meet the specifications for hydrogen storage. So far, the various catalyst had been studied outlining their activities, performances, and efficiencies. In this work, tri-metallic catalyst consist of Fe-Co-Mo supported on MgO was used. The catalyst was prepared by wet-impregnation method. Liquefied Petroleum Gas (LPG) was used as carbon source. The synthesis was conducted in atmospheric fixed bed reactor at reaction temperature range 750 – 850 °C for 30 minutes. The impregnation method applied in this study successfully deposed metal component on the MgO support surface. It found that the deposited metal components might partially replace Mg(OH){sub 2} or MgO molecules in their crystal lattice. Compare to the original MgO powder; it was significant increases in pore volume and surface area has occurred during catalyst preparation stages. The size of obtained carbon nanotubes is ranging from about 10.83 nm OD/4.09 nm ID up to 21.84 nm OD/6.51 nm ID, which means that multiwall carbon nanotubes were formed during the synthesis. Yield as much as 2.35 g.CNT/g.catalyst was obtained during 30 minutes synthesis and correspond to carbon nanotubes growth rate of 0.2 μm/min. The BET surface area of the obtained carbon nanotubes is 181.13 m{sup 2}/g and around 50 % of which is contributed by mesopores. Micropore with half pore width less than 1 nm contribute about 10% volume of total micro and mesopores volume of the carbon nanotubes. The existence of these micropores is very important to increase the hydrogen storage capacity of the carbon nanotubes.

  6. Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Dan; Tang, Xiaohong, E-mail: exhtang@ntu.edu.sg, E-mail: wangk@sustc.edu.cn; Li, Xianqiang [OPTIMUS, Photonics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wang, Kai, E-mail: exhtang@ntu.edu.sg, E-mail: wangk@sustc.edu.cn [Department of Electrical & Electronic Engineering, South University of Science and Technology of China, 1088 Xueyuan Avenue, Shenzhen 518055 (China); Olivier, Aurelien [CINTRA UMI 3288, School of Electrical and Electronic Engineering, Nanyang Technological University, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, 637553 Singapore (Singapore)

    2016-03-07

    After successful demonstration of GaAs nanowire (NW) epitaxial growth on indium tin oxide (ITO) by metal organic chemical vapor deposition, we systematically investigate the effect of growth parameters' effect on the GaAs NW, including temperature, precursor molar flow rates, growth time, and Au catalyst size. 40 nm induced GaAs NWs are observed with zinc-blende structure. Based on vapor-liquid-solid mechanism, a kinetic model is used to deepen our understanding of the incorporation of growth species and the role of various growth parameters in tuning the GaAs NW growth rate. Thermally activated behavior has been investigated by variation of growth temperature. Activation energies of 40 nm Au catalyst induced NWs are calculated at different trimethylgallium (TMGa) molar flow rates about 65 kJ/mol. The GaAs NWs growth rates increase with TMGa molar flow rates whereas the growth rates are almost independent of growth time. Due to Gibbs-Thomson effect, the GaAs NW growth rates increase with Au nanoparticle size at different temperatures. Critical radius is calculated as 2.14 nm at the growth condition of 430 °C and 1.36 μmol/s TMGa flow rate. It is also proved experimentally that Au nanoparticle below the critical radius such as 2 nm cannot initiate the growth of NWs on ITO. This theoretical and experimental growth parameters investigation enables great controllability over GaAs NWs grown on transparent conductive substrate where the methodology can be expanded to other III–V material NWs and is critical for potential hybrid solar cell application.

  7. Control of metamorphic buffer structure and device performance of In(x)Ga(1-x)As epitaxial layers fabricated by metal organic chemical vapor deposition.

    Science.gov (United States)

    Nguyen, H Q; Yu, H W; Luc, Q H; Tang, Y Z; Phan, V T H; Hsu, C H; Chang, E Y; Tseng, Y C

    2014-12-05

    Using a step-graded (SG) buffer structure via metal-organic chemical vapor deposition, we demonstrate a high suitability of In0.5Ga0.5As epitaxial layers on a GaAs substrate for electronic device application. Taking advantage of the technique's precise control, we were able to increase the number of SG layers to achieve a fairly low dislocation density (∼10(6) cm(-2)), while keeping each individual SG layer slightly exceeding the critical thickness (∼80 nm) for strain relaxation. This met the demanded but contradictory requirements, and even offered excellent scalability by lowering the whole buffer structure down to 2.3 μm. This scalability overwhelmingly excels the forefront studies. The effects of the SG misfit strain on the crystal quality and surface morphology of In0.5Ga0.5As epitaxial layers were carefully investigated, and were correlated to threading dislocation (TD) blocking mechanisms. From microstructural analyses, TDs can be blocked effectively through self-annihilation reactions, or hindered randomly by misfit dislocation mechanisms. Growth conditions for avoiding phase separation were also explored and identified. The buffer-improved, high-quality In0.5Ga0.5As epitaxial layers enabled a high-performance, metal-oxide-semiconductor capacitor on a GaAs substrate. The devices displayed remarkable capacitance-voltage responses with small frequency dispersion. A promising interface trap density of 3 × 10(12) eV(-1) cm(-2) in a conductance test was also obtained. These electrical performances are competitive to those using lattice-coherent but pricey InGaAs/InP systems.

  8. Formation and characterization of the MgO protecting layer deposited by plasma-enhanced metal-organic chemical-vapor deposition

    CERN Document Server

    Kang, M S; Byun, J C; Kim, D S; Choi, C K; Lee, J Y; Kim, K H

    1999-01-01

    MgO films were prepared on Si(100) and soda-lime glass substrates by using plasma-enhanced metal-organic chemical-vapor deposition. Various ratios of the O sub 2 /CH sub 3 MgO sup t Bu gas mixture and various gas flow rates were tested for the film fabrications. Highly (100)-oriented MgO films with good crystallinity were obtained with a 10 sccm CH sub 3 MgO sup t Bu flow without an O sub 2 gas flow. About 5 % carbon was contained in all the MgO films. The refractive index and the secondary electron emission coefficient for the best quality film were 1.43 and 0.45, respectively. The sputtering rate was about 0.2 nm/min for 10 sup 1 sup 1 cm sup - sup 3 Ar sup + ion density. Annealing at 500 .deg. C in an Ar ambient promoted the grain size without inducing a phase transition.

  9. Doping characteristics of Si-doped n-GaN Epilayers grown by low-pressure metal-organic chemical-vapor deposition

    CERN Document Server

    Noh, S K; Park, S E; Lee, I H; Choi, I H; Son, S J; Lim, K Y; Lee, H J

    1998-01-01

    We studied doping behaviors through analysis of the electronic properties of a series of undoped and Si-doped GaN epilayers grown on (0001) sapphire substrates by the low-pressure metal-organic chemical-vapor deposition (LP-MOCVD) technique. The doping efficiency was in the range of 0.4 - 0.8, and an empirical relation expressed as eta = 0.45 log[Si] - 8.1 was obtained. The temperature dependence of carrier concentration showed that the donor activation energy monotonically decreased from 17.6 meV to almost zero as the doping level increased. We suggest that the reduction in the activation energy is related not to autodoped defect centers but to doped Si donors and that the behavior originates from the formation of an impurity band. On the basis of an abrupt change in the compensation ratio from 0.9 to 0.5 by Si-doping, an exceptional difference in the Hall mobility between the undoped and the Si-doped films is explained by a mixed conduction mechanism of electrons and holes.

  10. Enhanced and uniform in-field performance in long (Gd, Y)-Ba-Cu-O tapes with zirconium doping fabricated by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Selvamanickam, V; Guevara, A; Zhang, Y; Kesgin, I; Xie, Y; Carota, G; Chen, Y; Dackow, J; Zhang, Y; Zuev, Y; Cantoni, C; Goyal, A; Coulter, J; Civale, L

    2010-01-01

    The influence of Zr doping in (Gd, Y)-Ba-Cu-O ((Gd, Y)BCO) tapes made by metal-organic chemical vapor deposition has been studied with a specific objective of uniform and reproducible enhancement in in-field critical current (I c ) over long lengths. 50 m long tapes with 7.5 and 10 at.% Zr doping in 1 μm thick (Gd, Y)BCO films have been found to exhibit a sharply enhanced peak in I c in the orientation of field parallel to the c-axis and retain 28% of their self-field I c value at 77 K and 1 T. BaZrO 3 (BZO) nanocolumn density in the cross-sectional microstructure was found to increase with increasing Zr addition. The end segments of the 50 m long tapes were found to display nearly identical angular dependence of critical current at 77 K and 1 T, indicative of the uniformity in in-field performance over this length. A 610 m long tape was fabricated with 10% Zr doping and a 130 m segment showed a 3.2% uniformity in critical current measured every meter in the orientation of B || c-axis. A retention factor of 36% of the zero-field I c value measured at 0.52 T over the 130 m is consistent with that obtained in short samples.

  11. Enhanced and uniform in-field performance in long (Gd, Y)-Ba-Cu-O tapes with zirconium doping fabricated by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, V; Guevara, A; Zhang, Y; Kesgin, I [Texas Center for Superconductivity and Department of Mechanical Engineering, University of Houston, Houston, TX 77059 (United States); Xie, Y; Carota, G; Chen, Y; Dackow, J [SuperPower Incorporated, 450 Duane Avenue Schenectady, NY 12304 (United States); Zhang, Y; Zuev, Y; Cantoni, C; Goyal, A [Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Coulter, J; Civale, L [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2010-01-15

    The influence of Zr doping in (Gd, Y)-Ba-Cu-O ((Gd, Y)BCO) tapes made by metal-organic chemical vapor deposition has been studied with a specific objective of uniform and reproducible enhancement in in-field critical current (I{sub c}) over long lengths. 50 m long tapes with 7.5 and 10 at.% Zr doping in 1 {mu}m thick (Gd, Y)BCO films have been found to exhibit a sharply enhanced peak in I{sub c} in the orientation of field parallel to the c-axis and retain 28% of their self-field I{sub c} value at 77 K and 1 T. BaZrO{sub 3} (BZO) nanocolumn density in the cross-sectional microstructure was found to increase with increasing Zr addition. The end segments of the 50 m long tapes were found to display nearly identical angular dependence of critical current at 77 K and 1 T, indicative of the uniformity in in-field performance over this length. A 610 m long tape was fabricated with 10% Zr doping and a 130 m segment showed a 3.2% uniformity in critical current measured every meter in the orientation of B || c-axis. A retention factor of 36% of the zero-field I{sub c} value measured at 0.52 T over the 130 m is consistent with that obtained in short samples.

  12. Influence of Zr and Ce doping on electromagnetic properties of (Gd,Y)-Ba-Cu-O superconducting tapes fabricated by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Selvamanickam, V.; Chen, Y.; Xie, J.; Zhang, Y.; Guevara, A.; Kesgin, I.; Majkic, G.; Martchevsky, M.

    2009-01-01

    (Gd,Y)Ba 2 Cu 3 O x tapes have been fabricated by metal organic chemical vapor deposition (MOCVD) with Zr-doping levels of 0-15 mol.% and Ce doping levels of 0-10 mol.% in 0.4 μm thick films. The critical current density (J c ) of Zr-doped samples at 77 K, 1 T applied in the orientation of H -parallel c is found to increase with Zr content and shows a maximum at 7.5% Zr doping. The 7.5% Zr-doped sample exhibits a critical current density (J c ) of 0.95 MA/cm 2 at H -parallel c which is more than 70% higher than the J c of the undoped sample. The peak in J c at H -parallel c is 83% of that at H -parallel a-b in the 7.5% Zr-doped sample which is more than twice as that in the undoped sample. Superconducting transition temperature (T c ) values as high as about 89 K have been achieved in samples even with 15% Zr and 10% Ce. Ce-doped samples with and without Ba compensation are found to exhibit substantially different J c values as well as angular dependence characteristics.

  13. Enhanced and Uniform in-Field Performance in Long (Gd,Y)-Ba-Cu-O Tapes with Zirconium Doping Fabricated by Metal Organic Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, V. [SuperPower Incorporated, Schenectady, New York; Guevara, A. [University of Houston, Houston; Zhang, Y. [University of Houston, Houston; Kesign, I. [University of Houston, Houston; Xie, Y. Y. [SuperPower Incorporated, Schenectady, New York; Carota, G. [SuperPower Incorporated, Schenectady, New York; Chen, Y. [SuperPower Incorporated, Schenectady, New York; Dackow, J. [SuperPower Incorporated, Schenectady, New York; Zhang, Yifei [ORNL; Zuev, Yuri L [ORNL; Cantoni, Claudia [ORNL; Goyal, Amit [ORNL; Coulter, J. [Los Alamos National Laboratory (LANL); Civale, L. [Los Alamos National Laboratory (LANL)

    2010-01-01

    The influence of Zr doping in (Gd, Y)-Ba-Cu-O ((Gd, Y)BCO) tapes made by metal-organic chemical vapor deposition has been studied with a specific objective of uniform and reproducible enhancement in in-field critical current (I{sub c}) over long lengths. 50 m long tapes with 7.5 and 10 at.% Zr doping in 1 {mu}m thick (Gd, Y)BCO films have been found to exhibit a sharply enhanced peak in I{sub c} in the orientation of field parallel to the c-axis and retain 28% of their self-field I{sub c} value at 77 K and 1 T. BaZrO{sub 3} (BZO) nanocolumn density in the cross-sectional microstructure was found to increase with increasing Zr addition. The end segments of the 50 m long tapes were found to display nearly identical angular dependence of critical current at 77 K and 1 T, indicative of the uniformity in in-field performance over this length. A 610 m long tape was fabricated with 10% Zr doping and a 130 m segment showed a 3.2% uniformity in critical current measured every meter in the orientation of {beta} {parallel} c-axis. A retention factor of 36% of the zero-field I{sub c} value measured at 0.52 T over the 130 m is consistent with that obtained in short samples.

  14. Influence of Zr and Ce doping on electromagnetic properties of (Gd,Y)-Ba-Cu-O superconducting tapes fabricated by metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, V., E-mail: selva@uh.ed [Department of Mechanical Engineering and Texas Center for Superconductivity, University of Houston, 4800 Calhoun Rd., Houston, TX 77204-4006 (United States); Chen, Y.; Xie, J. [SuperPower Inc., 450 Duane Ave., Schenectady, NY 12304 (United States); Zhang, Y.; Guevara, A.; Kesgin, I.; Majkic, G. [Department of Mechanical Engineering and Texas Center for Superconductivity, University of Houston, 4800 Calhoun Rd., Houston, TX 77204-4006 (United States); Martchevsky, M. [SuperPower Inc., 450 Duane Ave., Schenectady, NY 12304 (United States)

    2009-12-01

    (Gd,Y)Ba{sub 2}Cu{sub 3}O{sub x} tapes have been fabricated by metal organic chemical vapor deposition (MOCVD) with Zr-doping levels of 0-15 mol.% and Ce doping levels of 0-10 mol.% in 0.4 mum thick films. The critical current density (J{sub c}) of Zr-doped samples at 77 K, 1 T applied in the orientation of H -parallel c is found to increase with Zr content and shows a maximum at 7.5% Zr doping. The 7.5% Zr-doped sample exhibits a critical current density (J{sub c}) of 0.95 MA/cm{sup 2} at H -parallel c which is more than 70% higher than the J{sub c} of the undoped sample. The peak in J{sub c} at H -parallel c is 83% of that at H -parallel a-b in the 7.5% Zr-doped sample which is more than twice as that in the undoped sample. Superconducting transition temperature (T{sub c}) values as high as about 89 K have been achieved in samples even with 15% Zr and 10% Ce. Ce-doped samples with and without Ba compensation are found to exhibit substantially different J{sub c} values as well as angular dependence characteristics.

  15. The Structural Evolution of (Gd, Y)Ba2Cu3Ox Tapes With Zr Addition Made by Metal Organic Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lei, CH; Galstyan, E; Chen, YM; Shi, T; Liu, YH; Khatri, N; Liu, JF; Xiong, XM; Majkic, G; Selvamanickam, V

    2013-06-01

    Structural analysis of (Gd, Y) Ba2Cu3Ox tapes with Zr addition made by metal organic chemical vapor deposition has been conducted with transmission electron microscopy and X-ray diffraction. Zr content in the films was varied from 0 to 25% in the precursor. In all Zr-doped films, self-assembled nanocolumnar structures of BaZrO3 (BZO) were observed along the c-axis. The amount of BaZrO3 was found to increase steadily with Zr content. Additionally, planar BZO plates were found on the (001) plane of (Gd, Y) Ba2Cu3Ox film. The size and thickness of BZO plates were seen to increase with Zr doping level. Rare-earth copper oxide phases were observed to begin to emerge in the 20% Zr-doped film. Cross-sectional study of the interface between (Gd, Y)Ba2Cu3Ox and LaMnO3 cap layer revealed a thin discrete BZO layer on the LaMnO3 in the 20% Zr doped film.

  16. Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process.

    Science.gov (United States)

    Swain, Basudev; Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo; Lee, Kun-Jae

    2015-07-01

    Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga0.97N0.9O0.09 is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga0.97N0.9O0.09 of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4M HCl, 100°C and pulp density of 100 kg/m(3,) respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. Copyright © 2015 Elsevier Inc. All rights reserved.

  17. High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Fu Chen

    2017-12-01

    Full Text Available In this letter, high-resistivity unintentionally carbon-doped GaN layers with sheet resistivity greater than 106 Ω/□ have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD. We have observed that the growth of GaN nucleation layers (NLs under N2 ambient leads to a large full width at half maximum (FWHM of (102 X-ray diffraction (XRD line in the rocking curve about 1576 arc sec. Unintentional carbon incorporation can be observed in the secondary ion mass spectroscopy (SIMS measurements. The results demonstrate the self-compensation mechanism is attributed to the increased density of edge-type threading dislocations and carbon impurities. The AlGaN/GaN HEMT grown on the high-resistivity GaN template has also been fabricated, exhibiting a maximum drain current of 478 mA/mm, a peak transconductance of 60.0 mS/mm, an ON/OFF ratio of 0.96×108 and a breakdown voltage of 621 V.

  18. Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kyuseung; Chae, Sooryong; Jang, Jongjin; Min, Daehong; Kim, Jaehwan; Nam, Okhyun, E-mail: ohnam@kpu.ac.kr [Convergence Center for Advanced Nano Semiconductor (CANS), Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, 15073 (Korea, Republic of)

    2016-04-15

    In this study, self-assembled inclined (1-10-3)-oriented GaN nanorods (NRs) were grown on nanoimprinted (10-10) m-sapphire substrates using catalyst-free metal-organic chemical vapor deposition. According to X-ray phi-scans, the inclined GaN NRs were tilted at an angle of ∼57.5° to the [10-10]{sub sapp} direction. Specifically, the GaN NRs grew in a single inclined direction to the [11-20]{sub sapp}. Uni-directionally inclined NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN plane layer. It was confirmed that a thin layer of a-GaN was formed on r-facet nanogrooves of the m-sapphire substrate by nitridation. The interfacial a-GaN nucleation affected both the inclined angle and the growth direction of the inclined GaN NRs. Using X-ray diffraction and selective area electron diffraction, the epitaxial relationship between the inclined (1-10-3) GaN NRs and interfacial a-GaN layer on m-sapphire substrates was systematically investigated. Moreover, the inclined GaN NRs were observed to be mostly free of stacking fault-related defects using high-resolution transmission electron microscopy.

  19. Selective growth of Ge1- x Sn x epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition

    Science.gov (United States)

    Takeuchi, Wakana; Washizu, Tomoya; Ike, Shinichi; Nakatsuka, Osamu; Zaima, Shigeaki

    2018-01-01

    We have investigated the selective growth of a Ge1- x Sn x epitaxial layer on a line/space-patterned SiO2/Si substrate by metal-organic chemical vapor deposition. We examined the behavior of a Sn precursor of tributyl(vinyl)tin (TBVSn) during the growth on Si and SiO2 substrates and investigated the effect of the Sn precursor on the selective growth. The selective growth of the Ge1- x Sn x epitaxial layer was performed under various total pressures and growth temperatures of 300 and 350 °C. The selective growth of the Ge1- x Sn x epitaxial layer on the patterned Si region is achieved at a low total pressure without Ge1- x Sn x growth on the SiO2 region. In addition, we found that the Sn content in the Ge1- x Sn x epitaxial layer increases with width of the SiO2 region for a fixed Si width even with low total pressure. To control the Sn content in the selective growth of the Ge1- x Sn x epitaxial layer, it is important to suppress the decomposition and migration of Sn and Ge precursors.

  20. Oxygen and minority carrier lifetimes in N-and P-type AL0.2GA0.8AS grown by metal organics vapor phase epitaxy

    International Nuclear Information System (INIS)

    Zahraman, Khaled; Leroux, M.; Gibart, P.; Zaidi, M.A.; Bremond, G.; Guillot, G.

    2000-01-01

    author.The minority carrier lifetimes in Al x Ga 1-x As grown by Metal-Organics Vapor Phase Epitaxy (MOVPE) is generally lower than in GaAs. This is believed to be due to oxygen incorporation in the layers. We describe a study of radiative and non radiative minority carriers lifetimes in n-and p-type Al 0.2 Ga 0.8 As as a function of growth parameters, in correlation with oxygen concentration measurements and deep level transient spectroscopy (DLTS) studies. Long non radiative lifetimes and low oxygen contents are achieved using temperature growth. A main minority hole lifetime killer appears to be 0.4 eV deep O related electron trap detected by DLTS at concentrations three orders of magnitude lower than the atomic oxygen one. Record lifetimes in MOVPE grown n-and p-type Al 0.2 Ga 0.8 As are obtained. An Al 0.85 Ga 0.15 As/Al 0.2 Ga 0.8 As surface recombination velocity lower than 4.5x10 3 cm.s -1 is measured

  1. A review of theoretical study of graphene chemical vapor deposition synthesis on metals: nucleation, growth, and the role of hydrogen and oxygen

    Science.gov (United States)

    Rezwan Habib, Mohammad; Liang, Tao; Yu, Xuegong; Pi, Xiaodong; Liu, Yingchun; Xu, Mingsheng

    2018-03-01

    Graphene has attracted intense research interest due to its extraordinary properties and great application potential. Various methods have been proposed for the synthesis of graphene, among which chemical vapor deposition has drawn a great deal of attention for synthesizing large-area and high-quality graphene. Theoretical understanding of the synthesis mechanism is crucial for optimizing the experimental design for desired graphene production. In this review, we discuss the three fundamental steps of graphene synthesis in details, i.e. (1) decomposition of carbon feedstocks and formation of various active carbon species, (2) nucleation, and (3) attachment and extension. We provide a complete scenario of graphene synthesis on metal surfaces at atomistic level by means of density functional theory, molecular dynamics (MD), Monte Carlo (MC) and their combination and interface with other simulation methods such as quantum mechanical molecular dynamics, density functional tight binding molecular dynamics, and combination of MD and MC. We also address the latest investigation of the influences of the hydrogen and oxygen on the synthesis and the quality of the synthesized graphene.

  2. Photoluminescence and surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs quantum well structures grown by metal organic vapor phase epitaxy

    International Nuclear Information System (INIS)

    Chan, C.H.; Wu, J.D.; Huang, Y.S.; Hsu, H.P.; Tiong, K.K.; Su, Y.K.

    2010-01-01

    Photoluminescence (PL) and surface photovoltage spectroscopy (SPS) are used to characterize a series of highly strained In x Ga 1-x As/GaAs quantum well (QW) structures grown by metal organic vapor phase epitaxy with different indium compositions (0.395 ≤ x ≤ 0.44) in the temperature range of 20 K ≤ T ≤ 300 K. The PL features show redshift in peak positions and broadened lineshape with increasing indium composition. The S-shaped temperature dependent PL spectra have been attributed to carrier localization effect resulting from the presence of indium clusters at QW interfaces. A lineshape fit of features in the differential surface photovoltage (SPV) spectra has been used to determine the transition energies accurately. At temperature below 100 K, the light-hole (LH) related feature shows a significant phase difference as compared to that of heavy-hole (HH) related features. The phase change of the LH feature can be explained by the existence of type-II configuration for the LH valence band and the process of separation of carriers within the QWs together with possible capture by the interface defect traps. A detailed analysis of the observed phenomena enables the identification of spectral features and to evaluate the band lineup of the QWs. The results demonstrate the usefulness of PL and SPS for the contactless and nondestructive characterization of highly strained InGaAs/GaAs QW structures.

  3. Comparison of precursors for pulsed metal-organic chemical vapor deposition of HfO2 high-K dielectric thin films

    International Nuclear Information System (INIS)

    Teren, Andrew R.; Thomas, Reji; He, Jiaqing; Ehrhart, Peter

    2005-01-01

    Hafnium oxide films were deposited on Si(100) substrates using pulsed metal-organic chemical vapor deposition (CVD) and evaluated for high-K dielectric applications. Three types of precursors were tested: two oxygenated ones, Hf butoxide-dmae and Hf butoxide-mmp, and an oxygen-free one, Hf diethyl-amide. Depositions were carried out in the temperature range of 350-650 deg. C, yielding different microstructures ranging from amorphous to crystalline, monoclinic, films. The films were compared on the basis of growth rate, phase development, density, interface characteristics, and electrical properties. Some specific features of the pulsed injection technique are considered. For low deposition temperatures the growth rate for the amide precursor was significantly higher than for the mixed butoxide precursors. A thickness-dependent amorphous to crystalline phase transition temperature was found for all precursors. There is an increase of the film density along with the deposition temperature from values as low as 5 g/cm 3 at 350 deg. C to values close to the bulk value of 9.7 g/cm 3 at 550 deg. C. Crystallization is observed in the same temperature range for films of typically 10-20 nm thickness. However, annealing studies show that this density increase is not simply related to the crystallization of the films. Similar electrical properties could be observed for all precursors and the dielectric constant of the films reaches values similar to the best values reported for bulk crystalline HfO 2

  4. As-grown deep-level defects in n-GaN grown by metal-organic chemical vapor deposition on freestanding GaN

    International Nuclear Information System (INIS)

    Chen Shang; Ishikawa, Kenji; Hori, Masaru; Honda, Unhi; Shibata, Tatsunari; Matsumura, Toshiya; Tokuda, Yutaka; Ueda, Hiroyuki; Uesugi, Tsutomu; Kachi, Tetsu

    2012-01-01

    Traps of energy levels E c -0.26 and E c -0.61 eV have been identified as as-grown traps in n-GaN grown by metal-organic chemical vapor deposition by using deep level transient spectroscopy of the Schottky contacts fabricated by resistive evaporation. The additional traps of E c -0.13 and E c -0.65 eV have been observed in samples whose contacts are deposited by electron-beam evaporation. An increase in concentration of the E c -0.13 and E c -0.65 eV traps when approaching the interface between the contact and the GaN film supports our argument that these traps are induced by electron-beam irradiation. Conversely, the depth profiles of as-grown traps show different profiles between several samples with increased or uniform distribution in the near surface below 50 nm. Similar profiles are observed in GaN grown on a sapphire substrate. We conclude that the growth process causes these large concentrations of as-grown traps in the near-surface region. It is speculated that the finishing step in the growth process should be an essential issue in the investigation of the surface state of GaN.

  5. Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy

    Science.gov (United States)

    Fiedler, A.; Schewski, R.; Baldini, M.; Galazka, Z.; Wagner, G.; Albrecht, M.; Irmscher, K.

    2017-10-01

    We present a quantitative model that addresses the influence of incoherent twin boundaries on the electrical properties in β-Ga2O3. This model can explain the mobility collapse below a threshold electron concentration of 1 × 1018 cm-3 as well as partly the low doping efficiency in β-Ga2O3 layers grown homoepitaxially by metal-organic vapor phase epitaxy on (100) substrates of only slight off-orientation. A structural analysis by transmission electron microscopy (TEM) reveals a high density of twin lamellae in these layers. In contrast to the coherent twin boundaries parallel to the (100) plane, the lateral incoherent twin boundaries exhibit one dangling bond per unit cell that acts as an acceptor-like electron trap. Since the twin lamellae are thin, we consider the incoherent twin boundaries to be line defects with a density of 1011-1012 cm-2 as determined by TEM. We estimate the influence of the incoherent twin boundaries on the electrical transport properties by adapting Read's model of charged dislocations. Our calculations quantitatively confirm that the mobility reduction and collapse as well as partly the compensation are due to the presence of twin lamellae.

  6. High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Chen, Fu; Sun, Shichuang; Deng, Xuguang; Fu, Kai; Yu, Guohao; Song, Liang; Hao, Ronghui; Fan, Yaming; Cai, Yong; Zhang, Baoshun

    2017-12-01

    In this letter, high-resistivity unintentionally carbon-doped GaN layers with sheet resistivity greater than 106 Ω/□ have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). We have observed that the growth of GaN nucleation layers (NLs) under N2 ambient leads to a large full width at half maximum (FWHM) of (102) X-ray diffraction (XRD) line in the rocking curve about 1576 arc sec. Unintentional carbon incorporation can be observed in the secondary ion mass spectroscopy (SIMS) measurements. The results demonstrate the self-compensation mechanism is attributed to the increased density of edge-type threading dislocations and carbon impurities. The AlGaN/GaN HEMT grown on the high-resistivity GaN template has also been fabricated, exhibiting a maximum drain current of 478 mA/mm, a peak transconductance of 60.0 mS/mm, an ON/OFF ratio of 0.96×108 and a breakdown voltage of 621 V.

  7. High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors

    Science.gov (United States)

    Charles, M.; Baines, Y.; Bavard, A.; Bouveyron, R.

    2018-02-01

    It is increasingly important to reduce the cycle time of epitaxial growth, in order to reduce the costs of device fabrication, especially for GaN based structures which typically have growth cycles of several hours. We have performed a comprehensive study using metal-organic vapor phase epitaxy (MOVPE) investigating the effects of changing GaN growth rates from 0.9 to 14.5 μm/h. Although there is no significant effect on the strain incorporated in the layers, we have seen changes in the surface morphology which can be related to the change in dislocation behaviour and surface diffusion effects. At the small scale, as seen by AFM, increased dislocation density for higher growth rates leads to increased pinning of growth terraces, resulting in more closely spaced terraces. At a larger scale of hundreds of μm observed by optical profiling, we have related the formation of grains to the rate of surface diffusion of adatoms using a random walk model, implying diffusion distances from 30 μm for the highest growth rates up to 100 μm for the lowest. The increased growth rate also increases the intrinsic carbon incorporation which can increase the breakdown voltage of GaN films. Despite an increased threading dislocation density, these very high growth rates of 14.5 μm/hr by MOVPE have been shown to be appealing for reducing epitaxial growth cycle times and therefore costs in High Electron Mobility Transistor (HEMT) structures.

  8. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xue, JunShuai, E-mail: junshuaixue@hotmail.com; Zhang, JinCheng; Hao, Yue [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2016-01-04

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm{sup 2}/V s along with a sheet carrier density of 1.88 × 10{sup 13 }cm{sup −2} were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  9. Metal components analysis of metallothionein-III in the brain sections of metallothionein-I and metallothionein-II null mice exposed to mercury vapor with HPLC/ICP-MS

    Energy Technology Data Exchange (ETDEWEB)

    Kameo, Satomi; Nakai, Kunihiko; Kurokawa, Naoyuki; Satoh, Hiroshi [Tohoku University, Graduate School of Medicine, Aoba-ku, Sendai (Japan); Kanehisa, Tomokazu; Naganuma, Akira [Tohoku University, Graduate School of Pharmaceutical Sciences, Sendai (Japan)

    2005-04-01

    Mercury vapor is effectively absorbed via inhalation and easily passes through the blood-brain barrier; therefore, mercury poisoning with primarily central nervous system symptoms occurs. Metallothionein (MT) is a cysteine-rich metal-binding protein and plays a protective role in heavy-metal poisoning and it is associated with the metabolism of trace elements. Two MT isoforms, MT-I and MT-II, are expressed coordinately in all mammalian tissues, whereas MT-III is a brain-specific member of the MT family. MT-III binds zinc and copper physiologically and is seemed to have important neurophysiological and neuromodulatory functions. The MT functions and metal components of MTs in the brain after mercury vapor exposure are of much interest; however, until now they have not been fully examined. In this study, the influences of the lack of MT-I and MT-II on mercury accumulation in the brain and the changes of zinc and copper concentrations and metal components of MTs were examined after mercury vapor exposure by using MT-I, II null mice and 129/Sv (wild-type) mice as experimental animals. MT-I, II null mice and wild-type mice were exposed to mercury vapor or an air stream for 2 h and were killed 24 h later. The brain was dissected into the cerebral cortex, the cerebellum, and the hippocampus. The concentrations of mercury in each brain section were determined by cold vapor atomic absorption spectrometry. The concentrations of mercury, copper, and zinc in each brain section were determined by inductively coupled plasma mass spectrometry (ICP-MS). The mercury accumulated in brains after mercury vapor exposure for MT-I, II null mice and wild-type mice. The mercury levels of MT-I, II null mice in each brain section were significantly higher than those of wild-type mice after mercury vapor exposure. A significant change of zinc concentrations with the following mercury vapor exposure for MT-I, II null mice was observed only in the cerebellum analyzed by two-way analysis of

  10. Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors

    Directory of Open Access Journals (Sweden)

    Joseph J. Freedsman

    2012-06-01

    Full Text Available The trapping properties of in-situ metal-organic chemical vapor deposition (MOCVD grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs with AlN layers grown at 600 and 700 °C has been quantitatively analyzed by frequency dependent parallel conductance technique. Both the devices exhibited two kinds of traps densities, due to AlN (DT-AlN and AlGaN layers (DT-AlGaN respectively. The MIS-HFET grown at 600 °C showed a minimum DT-AlN and DT-AlGaN of 1.1 x 1011 and 1.2 x 1010 cm-2eV-1 at energy levels (ET -0.47 and -0.36 eV. Further, the gate-lag measurements on these devices revealed less degradation ∼ ≤ 5% in drain current density (Ids-max. Meanwhile, MIS-HFET grown at 700 °C had more degradation in Ids-max ∼26 %, due to high DT-AlN and DT-AlGaN of 3.4 x 1012 and 5 x 1011 cm-2eV-1 positioned around similar ET. The results shows MIS-HFET grown at 600 °C had better device characteristics with trap densities one order of magnitude lower than MIS-HFET grown at 700 °C.

  11. Saturated vapor pressure over molten mixtures of GaCl{sub 3} and alkali metal chlorides; Davlenie nasyshchennykh parov rasplavlennykh smesej CaCl{sub 3} s khloridami shchelochnykh metallov

    Energy Technology Data Exchange (ETDEWEB)

    Salyulev, A B; Smolenskij, V V; Moskalenko, N I [UrO RAN, Inst. Vysokotemperaturnoj Ehlektrokhimii, Elaterinburg (Russian Federation)

    2004-07-01

    Volatilities of GaCl{sub 3} and alkali metal chlorides over diluted (up to 3 mol %) solutions of GaCl{sub 3} in LiCl, NaCl, KCl, RbCl, and CsCl were measured at 1100 K by dynamic and indirect static methods. Chemical composition of saturated vapor over the mixed melts was determined. Partial pressures of the components were calculated. Their values depend essentially on specific alkali metal cation and on concentration of GaCl{sub 3}; their variation permits altering parameters of GaCl{sub 3} distillation from the salt melt in a wide range.

  12. Vapor deposition of tantalum and tantalum compounds

    International Nuclear Information System (INIS)

    Trkula, M.

    1996-01-01

    Tantalum, and many of its compounds, can be deposited as coatings with techniques ranging from pure, thermal chemical vapor deposition to pure physical vapor deposition. This review concentrates on chemical vapor deposition techniques. The paper takes a historical approach. The authors review classical, metal halide-based techniques and current techniques for tantalum chemical vapor deposition. The advantages and limitations of the techniques will be compared. The need for new lower temperature processes and hence new precursor chemicals will be examined and explained. In the last section, they add some speculation as to possible new, low-temperature precursors for tantalum chemical vapor deposition

  13. Photoreflectance study of strained GaAsN/GaAs T-junction quantum wires grown by metal-organic vapor phase epitaxy.

    Science.gov (United States)

    Klangtakai, Pawinee; Sanorpim, Sakuntam; Onabe, Kentaro

    2011-12-01

    Strained GaAsN T-junction quantum wires (T-QWRs) with different N contents grown on GaAs by two steps metal-organic vapor phase epitaxy in [001] and [110] directions, namely QW1 and QW2 respectively, have been investigated by photoreflectance (PR) spectroscopy. Two GaAsN T-QWRs with different N contents were formed by T-intersection of (i) a 6.4-nm-thick GaAs0.89N0.011 QW1 and a 5.2-nm-thick GaAs0.968N0.032 QW2 and (ii) a 5.0-nm-thick GaAs0.985N0.015 QW1 and a 5.2-nm-thick GaAs0.968N0.032 QW2. An evidence of a one-dimensional structure at T-intersection of the two QWs on the (001) and (110) surfaces was established by PR resonances associated with extended states in all the QW and T-QWR samples. It is found that larger lateral confinement energy than 100 meV in both of [001] and [110] directions were achieved for GaAsN T-QWRs. With increasing temperature, the transition energy of GaAsN T-QWRs decreases with a faster shrinking rate compared to that of bulk GaAs. Optical quality of GaAsN T-QWRs is found to be affected by the N-induced band edge fluctuation, which is the unique characteristic of dilute III-V-nitrides.

  14. Fast Growth of GaN Epilayers via Laser-Assisted Metal-Organic Chemical Vapor Deposition for Ultraviolet Photodetector Applications.

    Science.gov (United States)

    Rabiee Golgir, Hossein; Li, Da Wei; Keramatnejad, Kamran; Zou, Qi Ming; Xiao, Jun; Wang, Fei; Jiang, Lan; Silvain, Jean-François; Lu, Yong Feng

    2017-06-28

    In this study, we successfully developed a carbon dioxide (CO 2 )-laser-assisted metal-organic chemical vapor deposition (LMOCVD) approach to fast synthesis of high-quality gallium nitride (GaN) epilayers on Al 2 O 3 [sapphire(0001)] substrates. By employing a two-step growth procedure, high crystallinity and smooth GaN epilayers with a fast growth rate of 25.8 μm/h were obtained. The high crystallinity was confirmed by a combination of techniques, including X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and atomic force microscopy. By optimizing growth parameters, the ∼4.3-μm-thick GaN films grown at 990 °C for 10 min showed a smooth surface with a root-mean-square surface roughness of ∼1.9 nm and excellent thickness uniformity with sharp GaN/substrate interfaces. The full-width at half-maximum values of the GaN(0002) X-ray rocking curve of 313 arcsec and the GaN(101̅2) X-ray rocking curve of 390 arcsec further confirmed the high crystallinity of the GaN epilayers. We also fabricated ultraviolet (UV) photodetectors based on the as-grown GaN layers, which exhibited a high responsivity of 0.108 A W -1 at 367 nm and a fast response time of ∼125 ns, demonstrating its high optical quality with potential in optoelectronic applications. Our strategy thus provides a simple and cost-effective means toward fast and high-quality GaN heteroepitaxy growth suitable for fabricating high-performance GaN-based UV detectors.

  15. Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Watanabe, Arata, E-mail: a.watanabe.106@nitech.jp; Freedsman, Joseph J.; Urayama, Yuya; Christy, Dennis [Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Egawa, Takashi, E-mail: egawa.takashi@nitech.ac.jp [Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan)

    2015-12-21

    The thermal stabilities of metal-organic chemical vapor deposition-grown lattice-matched InAlN/GaN/Si heterostructures have been reported by using slower and faster growth rates for the InAlN barrier layer in particular. The temperature-dependent surface and two-dimensional electron gas (2-DEG) properties of these heterostructures were investigated by means of atomic force microscopy, photoluminescence excitation spectroscopy, and electrical characterization. Even at the annealing temperature of 850 °C, the InAlN layer grown with a slower growth rate exhibited a smooth surface morphology that resulted in excellent 2-DEG properties for the InAlN/GaN heterostructure. As a result, maximum values for the drain current density (I{sub DS,max}) and transconductance (g{sub m,max}) of 1.5 A/mm and 346 mS/mm, respectively, were achieved for the high-electron-mobility transistor (HEMT) fabricated on this heterostructure. The InAlN layer grown with a faster growth rate, however, exhibited degradation of the surface morphology at an annealing temperature of 850 °C, which caused compositional in-homogeneities and impacted the 2-DEG properties of the InAlN/GaN heterostructure. Additionally, an HEMT fabricated on this heterostructure yielded lower I{sub DS,max} and g{sub m,max} values of 1 A/mm and 210 mS/mm, respectively.

  16. 水和丙酮工质的金属纤维毡蒸气腔热管的传热性能%Thermal performance of vapor chamber heat pipe with metal felt wick of water or acetone working fluid

    Institute of Scientific and Technical Information of China (English)

    徐鹏程; 陶汉中; 张红

    2015-01-01

    通过实验研究了金属纤维毡吸液芯蒸气腔热管的传热特性,测试了在单一热源下,不同热通量、风速以及工质种类时蒸气腔热管的启动性能与均温特性,并使用红外热像仪对蒸气腔热管冷凝端拍摄。实验中蒸气腔热管使用的工质分别为水与丙酮。实验结果表明:金属纤维毡蒸气腔热管的启动时间基本在3000 s左右;蒸气腔热管的蒸发端与冷凝端的等温性能良好,其中水工质的冷热端最小温差为1.35℃,因此使用金属纤维毡吸液芯蒸气腔热管可以避免电子器件的局部高温。%The heat transfer characteristics of the vapor chamber heat pipe with metal fiber felt wick were studied by experiments. Under different conditions, the isothermal characteristics and startup performance of the vapor chamber heat pipe using a single heat source were tested. The variables were heat flux, cooling wind speed and working fluid. The condenser section of the vapor chamber heat pipe was filmed by infrared thermography. The working fluid used in the vapor chamber heat pipe was water or acetone. The vapor chamber heat pipe could startup smoothly from ambient temperature at different heating powers, and startup time was about 3000 s. Both evaporator and condenser sections of the vapor chamber heat pipe had good isothermal performance, and the minimum temperature difference of the heat pipe using water as working fluid was 1.35℃. So electronic devices could avoid local high temperature by using the vapor chamber heat pipe with metal fiber felt wick.

  17. Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

    2016-04-30

    Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B{sub 2}H{sub 6} flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10{sup −3} Ω cm, mobility of 16.5–25.5 cm{sup 2}/Vs, and carrier concentration of 2.2–2.7 × 10{sup 20} cm{sup −3} were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n{sup +}-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm{sup 2} and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm{sup 2} and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

  18. Microstructural and superconducting properties of high current metal-organic chemical vapor deposition YBa2Cu3O7-δ coated conductor wires

    International Nuclear Information System (INIS)

    Holesinger, T G; Maiorov, B; Ugurlu, O; Civale, L; Chen, Y; Xiong, X; Xie, Y; Selvamanickam, V

    2009-01-01

    Metal-organic chemical vapor deposition (MOCVD) on flexible, ion beam assisted deposition MgO templates has been used to produce high critical current density (J c ) (Y,Sm) 1 Ba 2 Cu 3 O y (REBCO) films suitable for use in producing practical high temperature superconducting (HTS) coated conductor wires. Thick films on tape were produced with sequential additions of 0.7 μm of REBCO via a reel-to-reel progression through a custom-designed MOCVD reactor. Multi-pass processing for thick film deposition is critically dependent upon minimizing surface secondary phase formation. Critical currents (I c s) of up to 600 A/cm width (t = 2.8 μm, J c = 2.6 MA cm -2 , 77 K, self-field) were obtained in short lengths of HTS wires. These high performance MOCVD films are characterized by closely spaced (Y,Sm) 2 O 3 nanoparticle layers that may be tilted relative to the film normal and REBCO orientation. Small shifts in the angular dependence of J c in low and intermediate applied magnetic fields can be associated with the tilted nanoparticle layers. Also present in these films were YCuO 2 nanoplates aligned with the YBCO matrix (short dimension perpendicular to the film normal), threading dislocations, and oriented composite defects (OCDs). The latter structures consist of single or multiple a-axis oriented grains coated on each side with insulating (Y,Sm) 2 O 3 or CuO. The OCDs formed a connected network of insulating phases by the end of the fourth pass. Subsequent attempts at adding additional layers did not increase I c . There is an inconsistency between the measured J c and the observed microstructural degradation that occurs with each additional layer, suggesting that previously deposited layers are improving with each repeated reactor pass. These dynamic changes suggest a role for post-processing to optimize superconducting properties of as-deposited films, addressing issues associated with reproducibility and manufacturing yield.

  19. Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process

    Energy Technology Data Exchange (ETDEWEB)

    Swain, Basudev, E-mail: Swain@iae.re.kr [Institute for Advanced Engineering (IAE), Advanced Materials & Processing Center, Yongin-Si 449-863 (Korea, Republic of); Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo [Institute for Advanced Engineering (IAE), Advanced Materials & Processing Center, Yongin-Si 449-863 (Korea, Republic of); Lee, Kun-Jae [Department of Energy Engineering, Dankook University, Cheonan 330-714 (Korea, Republic of)

    2015-07-15

    Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga{sub 0.97}N{sub 0.9}O{sub 0.09} is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga{sub 0.97}N{sub 0.9}O{sub 0.09} of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4 M HCl, 100 °C and pulp density of 100 kg/m{sup 3,} respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. - Highlights: • Waste MOCVD dust is treated through mechanochemical leaching. • GaN is hardly leached, and converted to NaGaO{sub 2} through ball milling and annealing. • Process for gallium recovery from waste MOCVD dust has been developed. • Thermal analysis and phase properties of GaN to Ga{sub 2}O{sub 3} and GaN to NaGaO{sub 2} is revealed. • Solid-state chemistry involved in this process is reported.

  20. Characterization of crystallinity of Ge{sub 1−x}Sn{sub x} epitaxial layers grown using metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Inuzuka, Yuki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Ike, Shinichi; Asano, Takanori [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Japan Society for the Promotion of Science, Chiyoda-ku, Tokyo 102-8472 (Japan); Takeuchi, Wakana [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakatsuka, Osamu, E-mail: nakatuka@alice.xtal.nagoya-u.ac.jp [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Zaima, Shigeaki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2016-03-01

    The epitaxial growth of a Ge{sub 1−x}Sn{sub x} layer was examined using metal-organic chemical vapor deposition (MOCVD) with two types of Ge precursors; tetra-ethyl-germane (TEGe) and tertiary-butyl-germane (TBGe); and the Sn precursor tri-butyl-vinyl-tin (TBVSn). Though the growth of a Ge{sub 1−x}Sn{sub x} layer on a Ge(001) substrate by MOCVD has been reported, a high-Sn-content Ge{sub 1−x}Sn{sub x} layer and the exploration of MO material combinations for Ge{sub 1−x}Sn{sub x} growth have not been reported. Therefore, the epitaxial growth of a Ge{sub 1−x}Sn{sub x} layer on Ge(001) and Si(001) substrates was examined using these precursors. The Ge{sub 1−x}Sn{sub x} layers were pseudomorphically grown on a Ge(001) substrate, while the Ge{sub 1−x}Sn{sub x} layer with a high degree of strain relaxation was obtained on a Si(001) substrate. Additionally, it was found that the two Ge precursors have different growth temperature ranges, where the TBGe could realize a higher growth rate at a lower growth temperature than the TEGe. The Ge{sub 1−x}Sn{sub x} layers grown using a combination of TBGe and TBVSn exhibited a higher crystalline quality and a smoother surface compared with the Ge{sub 1−x}Sn{sub x} layer prepared by low-temperature molecular beam epitaxy. In this study, a Ge{sub 1−x}Sn{sub x} epitaxial layer with a Sn content as high as 5.1% on a Ge(001) substrate was achieved by MOCVD at 300 °C. - Highlights: • Tertiary-butyl-germane and tri-butyl-vinyl-tin are suitable for Ge{sub 1−x}Sn{sub x} MOCVD growth. • We achieved a Sn content of 5.1% in Ge{sub 1−x}Sn{sub x} epitaxial layer on Ge(001). • The Ge{sub 1−x}Sn{sub x} layers grown on Ge and Si by MOCVD have high crystalline quality.

  1. Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

    International Nuclear Information System (INIS)

    Zeng, Xiangbin; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

    2016-01-01

    Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B_2H_6 flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10"−"3 Ω cm, mobility of 16.5–25.5 cm"2/Vs, and carrier concentration of 2.2–2.7 × 10"2"0 cm"−"3 were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n"+-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm"2 and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm"2 and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

  2. Mobile vapor recovery and vapor scavenging unit

    International Nuclear Information System (INIS)

    Stokes, C.A.; Steppe, D.E.

    1991-01-01

    This patent describes a mobile anti- pollution apparatus, for the recovery of hydrocarbon emissions. It comprises a mobile platform upon which is mounted a vapor recovery unit for recovering vapors including light hydrocarbons, the vapor recovery unit having an inlet and an outlet end, the inlet end adapted for coupling to an external source of hydrocarbon vapor emissions to recover a portion of the vapors including light hydrocarbons emitted therefrom, and the outlet end adapted for connection to a means for conveying unrecovered vapors to a vapor scavenging unit, the vapor scavenging unit comprising an internal combustion engine adapted for utilizing light hydrocarbon in the unrecovered vapors exiting from the vapor recovery unit as supplemental fuel

  3. Petroleum Vapor Intrusion

    Science.gov (United States)

    One type of vapor intrusion is PVI, in which vapors from petroleum hydrocarbons such as gasoline, diesel, or jet fuel enter a building. Intrusion of contaminant vapors into indoor spaces is of concern.

  4. Uso de la generación de vapores en la determinación de metales traza por técnicas atómicas

    OpenAIRE

    Villanueva Alonso, Julia

    2012-01-01

    La generación de vapor es una técnica de introducción de muestra que ha sido empleada para incrementar la sensibilidad en la determinación de los elementos que forman hidruros usando diferentes técnicas espectroscópicas como AAS. (Espectroscopía de Absorción Atómica), AFS (Espectroscopía de Fluorescencia Atómica) o ICPOES (Espectroscopía de Emisión Óptica con fuente de Plasma de Acoplamiento Inductivo). En las últimas décadas la aplicación de la generación de vapor se ha amp...

  5. Understanding and optimization of InN and high indium containing InGaN alloys by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Tuna, Oecal

    2013-01-01

    Among the III-nitride semiconductors (Ga,Al,In)N, InN is the most attractive one due to having the narrowest bandgap of 0.64 eV. The revision in the bandgap of InN makes the InGaN more important since one can cover the whole solar spectrum by only changing In composition in an InGaN layer. The comparison of quality of InN and InGaN layers grown using a metal organic chemical vapor deposition (MOCVD) and a molecular beam epitaxy (MBE) methods indicate that growth with MOCVD is the more challenging, again due to the high dissociation temperature of NH 3 relative to the low decomposition temperature of InN (560-570 C). However, there is significant interest in developing an MOCVD process for InN and InGaN growth since MOCVD technology is the technology currently in use for commercial fabrication of group III nitride thin films. This thesis is therefore focused on a study of MOCVD growth of n- and p-type InN and In-rich InGaN films with the goal of providing new information on the influence of growth conditions on the film properties. Initially, a detailed investigation of MOCVD of InN is given. It is shown that MOCVD growth parameters (growth temperature and V/III ratio) have impacts on the layer properties such as In droplet formation on the surface as well as on its electrical and optical properties. PAS is employed for point defect analyzation. It is shown that In vacancies isolated by nitrogen vacancies are the dominant vacancy-type positron traps in InN. A decrease in the N vacancy concentration in InN is observed as a result of the growth temperature increase from 500 to 550 C. This is an indication of a reduction of N vacancy concentration by enhancing NH 3 dissociation at high growth temperature. Results obtained from optical techniques (Raman and PL) are used to estimate the free carrier concentrations in InN. Electrical characterizations are also carried out using Hall measurements. Carrier concentration values obtained by these three techniques revealed a

  6. Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Ming; Wang Yong; Wong Kai-Ming; Lau Kei-May

    2014-01-01

    High-performance low-leakage-current AlGaN/GaN high electron mobility transistors (HEMTs) on silicon (111) substrates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10 −8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated

  7. Low-Temperature Preparation of (111)-oriented Pb(Zr,Ti)O3 Films Using Lattice-Matched (111)SrRuO3/Pt Bottom Electrode by Metal-Organic Chemical Vapor Deposition

    Science.gov (United States)

    Kuwabara, Hiroki; Sumi, Akihiro; Okamoto, Shoji; Hoko, Hiromasa; Cross, Jeffrey S.; Funakubo, Hiroshi

    2009-04-01

    Pb(Zr0.35Ti0.65)O3 (PZT) films 170 nm thick were prepared at 415 °C by pulsed metal-organic chemical vapor deposition. The (111)-oriented PZT films with local epitaxial growth were obtained on (111)SrRuO3/(111)Pt/TiO2/SiO2/Si substrates and their ferroelectricities were ascertained. Ferroelectricity was improved by postannealing under O2 gas flow up to 550 °C. Larger remanent polarization and better fatigue endurance were obtained using a SrRuO3 top electrode compared to a Pt top electrode for PZT films after annealing at 500 °C.

  8. Improved crystal quality of a-plane GaN with high- temperature 3-dimensional GaN buffer layers deposited by using metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Park, Sung Hyun; Moon, Dae Young; Kim, Bum Ho; Kim, Dong Uk; Chang, Ho Jun; Jeon, Heon Su; Yoon, Eui Joon; Joo, Ki Su; You, Duck Jae; Nanishi, Yasushi

    2012-01-01

    a-plane GaN on r-plane sapphire substrates suffers from high density defects and rough surfaces. To obtain pit-free a-plane GaN by metal-organic chemical vapor deposition, we intentionally grew high-temperature (HT) 3-dimensional (3D) GaN buffer layers on a GaN nucleation layer. The effects of the HT 3D GaN buffer layers on crystal quality and the surface morphology of a-plane GaN were studied. The insertion of a 3D GaN buffer layer with an optimum thickness was found to be an effective method to obtain pit-free a-plane GaN with improved crystalline quality on r-plane sapphire substrates. An a-plane GaN light emitting diode (LED) at an emission wavelength around 480 nm with negligible peak shift was successfully fabricated.

  9. Evaluation of surface tension and Tolman length as a function of droplet radius from experimental nucleation rate and supersaturation ratio: metal vapor homogeneous nucleation.

    Science.gov (United States)

    Onischuk, A A; Purtov, P A; Baklanov, A M; Karasev, V V; Vosel, S V

    2006-01-07

    Zinc and silver vapor homogeneous nucleations are studied experimentally at the temperature from 600 to 725 and 870 K, respectively, in a laminar flow diffusion chamber with Ar as a carrier gas at atmospheric pressure. The size, shape, and concentration of aerosol particles outcoming the diffusion chamber are analyzed by a transmission electron microscope and an automatic diffusion battery. The wall deposit is studied by a scanning electron microscope (SEM). Using SEM data the nucleation rate for both Zn and Ag is estimated as 10(10) cm(-3) s(-1). The dependence of critical supersaturation on temperature for Zn and Ag measured in this paper as well as Li, Na, Cs, Ag, Mg, and Hg measured elsewhere is analyzed. To this aim the classical nucleation theory is extended by the dependence of surface tension on the nucleus radius. The preexponent in the formula for the vapor nucleation rate is derived using the formula for the work of formation of noncritical embryo [obtained by Nishioka and Kusaka [J. Chem. Phys. 96, 5370 (1992)] and later by Debenedetti and Reiss [J. Chem. Phys. 108, 5498 (1998)

  10. Understanding and optimization of InN and high indium containing InGaN alloys by metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tuna, Oecal

    2013-07-18

    Among the III-nitride semiconductors (Ga,Al,In)N, InN is the most attractive one due to having the narrowest bandgap of 0.64 eV. The revision in the bandgap of InN makes the InGaN more important since one can cover the whole solar spectrum by only changing In composition in an InGaN layer. The comparison of quality of InN and InGaN layers grown using a metal organic chemical vapor deposition (MOCVD) and a molecular beam epitaxy (MBE) methods indicate that growth with MOCVD is the more challenging, again due to the high dissociation temperature of NH{sub 3} relative to the low decomposition temperature of InN (560-570 C). However, there is significant interest in developing an MOCVD process for InN and InGaN growth since MOCVD technology is the technology currently in use for commercial fabrication of group III nitride thin films. This thesis is therefore focused on a study of MOCVD growth of n- and p-type InN and In-rich InGaN films with the goal of providing new information on the influence of growth conditions on the film properties. Initially, a detailed investigation of MOCVD of InN is given. It is shown that MOCVD growth parameters (growth temperature and V/III ratio) have impacts on the layer properties such as In droplet formation on the surface as well as on its electrical and optical properties. PAS is employed for point defect analyzation. It is shown that In vacancies isolated by nitrogen vacancies are the dominant vacancy-type positron traps in InN. A decrease in the N vacancy concentration in InN is observed as a result of the growth temperature increase from 500 to 550 C. This is an indication of a reduction of N vacancy concentration by enhancing NH{sub 3} dissociation at high growth temperature. Results obtained from optical techniques (Raman and PL) are used to estimate the free carrier concentrations in InN. Electrical characterizations are also carried out using Hall measurements. Carrier concentration values obtained by these three techniques

  11. Photoelectrochemical energy conversion obtained with ultrathin organo-metallic-chemical-vapor-deposition layer of FeS2 (pyrite) on TiO2

    International Nuclear Information System (INIS)

    Ennaoui, A.; Fiechter, S.; Tributsch, H.; Giersig, M.; Vogel, R.; Weller, H.

    1992-01-01

    Ultrathin (10 to 20 nm thick), polycrystalline films of FeS 2 (pyrite) were grown on TiO 2 (anatase) by chemical vapor deposition. The FeS 2 films were characterized using optical absorption and high-resolution electron microscopy. Photoelectrochemical solar cells, using TiO 2 (anatase) coated with FeS 2 ultrathin films, generated high open-circuit photo-voltages, of up to 600 mV, compared with a single crystal of pyrite electrode (200 mV). The photoelectrochemical behavior shows a strong dependence of photovoltage and photocurrent on the pH of the solution. This paper reports that it is explained by electron injection from the conduction band of FeS 2 to the conduction band of TiO 2 . Regeneration of holes is taking place by electron transfer from the redox system in the electrolyte

  12. Photoelectrochemical energy conversion obtained with ultrathin organo-metallic-chemical-vapor-deposition layer of FeS[sub 2] (pyrite) on TiO[sub 2

    Energy Technology Data Exchange (ETDEWEB)

    Ennaoui, A.; Fiechter, S.; Tributsch, H. (Abt. Solare Energetik, Hahn-Meitner-Inst., D-1000 Berlin 39 (Germany)); Giersig, M.; Vogel, R.; Weller, H. (Abt. Photochemie, Hahn-Meitner-Inst., D-1000 Berlin 39 (Germany))

    1992-09-01

    Ultrathin (10 to 20 nm thick), polycrystalline films of FeS[sub 2] (pyrite) were grown on TiO[sub 2] (anatase) by chemical vapor deposition. The FeS[sub 2] films were characterized using optical absorption and high-resolution electron microscopy. Photoelectrochemical solar cells, using TiO[sub 2] (anatase) coated with FeS[sub 2] ultrathin films, generated high open-circuit photo-voltages, of up to 600 mV, compared with a single crystal of pyrite electrode (200 mV). The photoelectrochemical behavior shows a strong dependence of photovoltage and photocurrent on the pH of the solution. This paper reports that it is explained by electron injection from the conduction band of FeS[sub 2] to the conduction band of TiO[sub 2]. Regeneration of holes is taking place by electron transfer from the redox system in the electrolyte.

  13. GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Lee, SeungGeun; Forman, Charles A.; Lee, Changmin; Kearns, Jared; Young, Erin C.; Leonard, John T.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

    2018-06-01

    We report the first demonstration of III–nitride vertical-cavity surface-emitting lasers (VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal–organic chemical vapor deposition (MOCVD). For the TJs, n++-GaN was grown on in-situ activated p++-GaN after buffered HF surface treatment. The electrical properties and epitaxial morphologies of the TJs were first investigated on TJ LED test samples. A VCSEL with a TJ intracavity contact showed a lasing wavelength of 408 nm, a threshold current of ∼15 mA (10 kA/cm2), a threshold voltage of 7.8 V, a maximum output power of 319 µW, and a differential efficiency of 0.28%.

  14. Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices

    Science.gov (United States)

    Lund, Cory; Romanczyk, Brian; Catalano, Massimo; Wang, Qingxiao; Li, Wenjun; DiGiovanni, Domenic; Kim, Moon J.; Fay, Patrick; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

    2017-05-01

    In this study, the growth of high quality N-polar InGaN films by metalorganic chemical vapor deposition is presented with a focus on growth process optimization for high indium compositions and the structural and tunneling properties of such films. Uniform InGaN/GaN multiple quantum well stacks with indium compositions up to 0.46 were grown with local compositional analysis performed by energy-dispersive X-ray spectroscopy within a scanning transmission electron microscope. Bright room-temperature photoluminescence up to 600 nm was observed for films with indium compositions up to 0.35. To study the tunneling behavior of the InGaN layers, N-polar GaN/In0.35Ga0.65N/GaN tunnel diodes were fabricated which reached a maximum current density of 1.7 kA/cm2 at 5 V reverse bias. Temperature-dependent measurements are presented and confirm tunneling behavior under reverse bias.

  15. Surface-driven, one-step chemical vapor deposition of γ-Al{sub 4}Cu{sub 9} complex metallic alloy film

    Energy Technology Data Exchange (ETDEWEB)

    Prud’homme, Nathalie [CIRIMAT, Université de Toulouse - CNRS, 4 allée Emile Monso, BP-44362, 31432 Toulouse Cedex 4 (France); Université Paris-Sud 11, LEMHE/ICMMO, Bat 410, 91405 Orsay Cedex (France); Duguet, Thomas, E-mail: thomas.duguet@ensiacet.fr [CIRIMAT, Université de Toulouse - CNRS, 4 allée Emile Monso, BP-44362, 31432 Toulouse Cedex 4 (France); Samélor, Diane; Senocq, François; Vahlas, Constantin [CIRIMAT, Université de Toulouse - CNRS, 4 allée Emile Monso, BP-44362, 31432 Toulouse Cedex 4 (France)

    2013-10-15

    The present paper is a paradigm for the one-step formation of complex intermetallic coatings by chemical vapor deposition. It genuinely addresses the challenge of depositing an intermetallic coating with comparable contents of Cu and Al. Depending on processing conditions, a pure γ-Al{sub 4}Cu{sub 9} and multi-phase Al-Cu films are grown with wetting properties of the former being similar to its bulk counterpart. The deposition process and its parametric investigation are detailed. Two metalorganic precursors are used taking into account their transport and chemical properties, and deposition temperature ranges. On line and ex situ characterizations enlighten the competition which occurs at the growing surface between molecular fragments, and which limits growth rates. Notably, introducing a partial pressure of hydrogen gas during deposition reduces Al growth rate from dimethylethylamine alane (DMEAA), by displacing the hydrogen desorption equilibrium. This Al partial growth rate decrease is not sufficient to achieve a Cu/Al atomic ratio that is high enough for the formation of intermetallics with close Al and Cu compositions. A fivefold increase of the flux of the gaseous copper(I) cyclopentadienyl triethylphosphine CpCuPEt{sub 3}, whereas the DMEAA flux remains constant, results in the targeted Al/Cu atomic ratio equal to 44/56. Nevertheless, the global growth rate is rendered extremely low by the deposition inhibition caused by a massive phosphine adsorption (-PEt{sub 3}). Despite these limitations, the results pave the way towards the conformal coating of complex surface geometries by such intermetallic compounds.

  16. Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition

    Science.gov (United States)

    Kelly, David Quest

    After the integrated circuit was invented in 1959, complementary metal-oxide-semiconductor (CMOS) technology soon became the mainstay of the semiconductor industry. Silicon-based CMOS has dominated logic technologies for decades. During this time, chip performance has grown at an exponential rate at the cost of higher power consumption and increased process complexity. The performance gains have been made possible through scaling down circuit dimensions by improvements in lithography capabilities. Since scaling cannot continue forever, researchers have vigorously pursued new ways of improving the performance of metal-oxide-semiconductor field-effect transistors (MOSFETs) without having to shrink gate lengths and reduce the gate insulator thickness. Strained silicon, with its ability to boost transistor current by improving the channel mobility, is one of the methods that has already found its way into production. Although not yet in production, high-kappa dielectrics have also drawn wide interest in industry since they allow for the reduction of the electrical oxide thickness of the gate stack without having to reduce the physical thickness of the dielectric. Further out on the horizon is the incorporation of high-mobility materials such as germanium (Ge), silicon-germanium (Si1-xGe x), and the III-V semiconductors. Among the high-mobility materials, Ge has drawn the most attention because it has been shown to be compatible with high-kappa dielectrics and to produce high drive currents compared to Si. Among the most difficult challenges for integrating Ge on Si is finding a suitable method for reducing the number of crystal defects. The use of strain-relaxed Si1- xGex buffers has proven successful for reducing the threading dislocation density in Ge epitaxial layers, but questions remain as to the viability of this method in terms of cost and process complexity. This dissertation presents research on thin germanium-carbon (Ge 1-yCy layers on Si for the fabrication

  17. Shocked plate metal atom oxidation laser

    International Nuclear Information System (INIS)

    De Koker, J.G.; Rice, W.W. Jr.; Jensen, R.J.

    1975-01-01

    A method and apparatus for producing metal atom oxidation lasing wherein an explosively shocked grooved metal plate produces metal vapor jets directed through an appropriate gaseous oxidizer are described. Reaction of the metal vapor with the oxidizer produces molecular species having a population inversion therein. (U.S.)

  18. Metal-organic chemical vapor deposition of ultra-thin photovoltaic devices using a pyrite based p-i-n structure

    Energy Technology Data Exchange (ETDEWEB)

    Clayton, A.J., E-mail: andy.clayton@optictechnium.com [CSER, Glyndwr University, OpTIC Technium, St Asaph, LL17 0JD (United Kingdom); Irvine, S.J.C.; Barrioz, V.; Brooks, W.S.M. [CSER, Glyndwr University, OpTIC Technium, St Asaph, LL17 0JD (United Kingdom); Zoppi, G.; Forbes, I. [NPAC, Northumbria University, Newcastle upon Tyne, NE1 8ST (United Kingdom); Rogers, K.D.; Lane, D.W.; Hutchings, K.; Roncallo, S. [Centre for Material Science and Engineering, Cranfield University, Swindon, SN6 8LA (United Kingdom)

    2011-08-31

    Ultra-thin photovoltaic (PV) devices were produced by atmospheric pressure metal organic chemical vapour deposition (AP-MOCVD) incorporating a highly absorbing intermediate sulphurised FeS{sub x} layer into a CdS/CdTe structure. X-ray diffraction (XRD) confirmed a transitional phase change to pyrite FeS{sub 2} after post growth sulphur (S) annealing of the FeS{sub x} layer between 400 deg. C and 500 deg. C. Devices using a superstrate configuration incorporating a sulphurised or non-sulphurised FeS{sub x} layer were compared to p-n devices with only a CdS/CdTe structure. Devices with sulphurised FeS{sub x} layers performed least efficiently, even though pyrite fractions were present. Rutherford back scattering (RBS) confirmed deterioration of the CdS/FeS{sub x} interface due to S inter-diffusion during the annealing process.

  19. Fuel vapor pressure (FVAPRS)

    International Nuclear Information System (INIS)

    Mason, R.E.

    1979-04-01

    A subcode (FVAPRS) is described which calculates fuel vapor pressure. This subcode was developed as part of the fuel rod behavior modeling task performed at EG and G Idaho, Inc. The fuel vapor pressure subcode (FVAPRS), is presented and a discussion of literature data, steady state and transient fuel vapor pressure equations and estimates of the standard error of estimate to be expected with the FVAPRS subcode are included

  20. Cd(1-x)Zn(x)O [0.05 ≤x≤ 0.26] synthesized by vapor-diffusion induced hydrolysis and co-nucleation from aqueous metal salt solutions.

    Science.gov (United States)

    Schwenzer, Birgit; Neilson, James R; Jeffries, Stacie M; Morse, Daniel E

    2011-02-14

    Nanoparticulate Cd(1-x)Zn(x)O (x = 0, 0.05-0.26, 1) is synthesized in a simple two-step synthesis approach. Vapor-diffusion induced catalytic hydrolysis of two molecular precursors at low temperature induces co-nucleation and polycondensation to produce bimetallic layered hydroxide salts (M = Cd, Zn) as precursor materials which are subsequently converted to Cd(1-x)Zn(x)O at 400 °C. Unlike ternary materials prepared by standard co-precipitation procedures, all products presented here containing < 30 mol% Zn(2+) ions are homogeneous in elemental composition on the micrometre scale. This measured compositional homogeneity within the samples, as determined by energy dispersive spectroscopy and inductively coupled plasma spectroscopy, is a testimony to the kinetic control achieved by employing slow hydrolysis conditions. In agreement with this observation, the optical properties of the materials obey Vegard's Law for a homogeneous solid solution of Cd(1-x)Zn(x)O, where x corresponds to the values determined by inductively coupled plasma analysis, even though powder X-ray diffraction shows phase separation into a cubic mixed metal oxide phase and a hexagonal ZnO phase at all doping levels.

  1. Effect of growth conditions on the Al composition and optical properties of Al x Ga 1−x N layers grown by atmospheric-pressure metal organic vapor phase epitaxy

    KAUST Repository

    Soltani, S.

    2017-02-17

    The effect of growth conditions on the Al composition and optical properties of AlxGa1-xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy is investigated. The Al content of the samples is varied between 3.0% and 9.3% by changing the gas flow rate of either trimethylaluminum (TMA) or trimethylgallium (TMG) while other growth parameters are kept constant. The optical properties of the AlxGa1-xN layers are studied by photoreflectance and time-resolved photoluminescence (TR-PL) spectroscopies. A degeneration in the material quality of the samples is revealed when the Al content is increased by increasing the TMA flow rate. When the TMG flow rate is decreased with a fixed TMA flow rate, the Al content of the AlxGa1-xN layers is increased and, furthermore, an improvement in the optical properties corresponding with an increase in the PL decay time is observed. (C) 2017 Elsevier B.V. All rights reserved.

  2. Characterization of RuO sub 2 electrodes for ferroelectric thin films prepared by metal-organic chemical-vapor deposition using Ru(C sub 1 sub 1 H sub 1 sub 9 O sub 2) sub 3

    CERN Document Server

    Lee, J M; Shin, J C; Hwang, C S; Kim, H J; Suk, C G

    1999-01-01

    Pure and conducting RuO sub 2 thin films were deposited on Si substrates at 250 approx 450 .deg. C using Ru(C sub 1 sub 1 H sub 1 sub 9 O sub 2) sub 3 as a precursor by low-pressure metal-organic chemical-vapor deposition (LP-MOCVD). At a lower deposition temperature,smoother and denser RuO sub 2 thin films were deposited. The RuO sub 2 thin films, which were crack free, adhered well onto the substrates and showed very low resistivities around 45 approx 60 mu OMEGA cm. RuO sub 2 thin films on (Ba, Sr)/TiO sub 3 /Pt/SiO sub 2 /Si showed good properties, indicating that MOCVD RuO sub 2 thin films from Ru(C sub 1 sub 1 H sub 1 sub 9 O sub 2) sub 3 can be applied as electrodes of high-dielectric thin films for capacitors in ultra-large-scale DRAMs.

  3. Effect of growth conditions on the Al composition and optical properties of Al x Ga 1−x N layers grown by atmospheric-pressure metal organic vapor phase epitaxy

    KAUST Repository

    Soltani, S.; Bouzidi, M.; Chine, Z.; Toure, A.; Halidou, I.; El Jani, B.; Shakfa, M. K.

    2017-01-01

    The effect of growth conditions on the Al composition and optical properties of AlxGa1-xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy is investigated. The Al content of the samples is varied between 3.0% and 9.3% by changing the gas flow rate of either trimethylaluminum (TMA) or trimethylgallium (TMG) while other growth parameters are kept constant. The optical properties of the AlxGa1-xN layers are studied by photoreflectance and time-resolved photoluminescence (TR-PL) spectroscopies. A degeneration in the material quality of the samples is revealed when the Al content is increased by increasing the TMA flow rate. When the TMG flow rate is decreased with a fixed TMA flow rate, the Al content of the AlxGa1-xN layers is increased and, furthermore, an improvement in the optical properties corresponding with an increase in the PL decay time is observed. (C) 2017 Elsevier B.V. All rights reserved.

  4. β-Ga2O3 versus ε-Ga2O3: Control of the crystal phase composition of gallium oxide thin film prepared by metal-organic chemical vapor deposition

    Science.gov (United States)

    Zhuo, Yi; Chen, Zimin; Tu, Wenbin; Ma, Xuejin; Pei, Yanli; Wang, Gang

    2017-10-01

    Gallium oxide thin films of β and ε phase were grown on c-plane sapphire using metal-organic chemical vapor deposition and the phase compositions were analyzed using X-ray diffraction. The epitaxial phase diagram was constructed as a function of the growth temperature and VI/III ratio. A low growth temperature and low VI/III ratio were beneficial for the formation of hexagonal-type ε-Ga2O3. Further structure analysis revealed that the epitaxial relationship between ε-Ga2O3 and c-plane sapphire is ε-Ga2O3 (0001) || Al2O3 (0001) and ε-Ga2O3 || Al2O3 . The structural evolution of the mixed-phase sample during film thickening was investigated. By reducing the growth rate, the film evolved from a mixed phase to the energetically favored ε phase. Based on these results, a Ga2O3 thin film with a phase-pure ε-Ga2O3 upper layer was successfully obtained.

  5. Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    He, X.G. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhao, D.G., E-mail: dgzhao@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Jiang, D.S.; Liu, Z.S.; Chen, P.; Le, L.C.; Yang, J.; Li, X.J. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhang, S.M.; Zhu, J.J.; Wang, H.; Yang, H. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

    2014-08-01

    GaN films were grown by metal-organic chemical vapor deposition (MOCVD) under various growth conditions. The influences of MOCVD growth parameters, i.e., growth pressure, ammonia (NH{sub 3}) flux, growth temperature, trimethyl-gallium flux and H{sub 2} flux, on residual carbon concentration ([C]) were systematically investigated. Secondary ion mass spectroscopy measurements show that [C] can be effectively modulated by growth conditions. Especially, it can increase by reducing growth pressure up to two orders of magnitude. High-resistance (HR) GaN epilayer with a resistivity over 1.0 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. The mechanism of the formation of HR GaN epilayer is discussed. An Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistor structure with a HR GaN buffer layer and an additional low-carbon GaN channel layer is presented, exhibiting a high two dimensional electron gas mobility of 1815 cm{sup 2}/Vs. - Highlights: • Influence of MOCVD parameters on residual carbon concentration in GaN is studied. • GaN layer with a resistivity over 1 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. • High electron mobility transistor (HEMT) structures were prepared. • Control of residual carbon content results in HEMT with high 2-D electron gas mobility.

  6. Pilot-scale electron cyclotron resonance-metal organic chemical vapor deposition system for the preparation of large-area fluorine-doped SnO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Bup Ju [Department of Energy and Environmental Engineering, Shinhan University, 233-1, Sangpae-dong, Dongducheon, Gyeonggi-do 483-777 (Korea, Republic of); Hudaya, Chairul [Department of Electrical Engineering, Faculty of Engineering, Universitas Indonesia, Kampus Baru UI, Depok 16424 (Indonesia); Center for Energy Convergence, Green City Research Institute, Korea Institute of Science and Technology, Hwarangno 14 gil 5, Seoul 136-791 (Korea, Republic of); Department of Energy and Environmental Engineering, Korea University of Science and Technology, 176 Gajungro Yuseong-gu, Daejeon 305-350 (Korea, Republic of); Lee, Joong Kee, E-mail: leejk@kist.re.kr [Center for Energy Convergence, Green City Research Institute, Korea Institute of Science and Technology, Hwarangno 14 gil 5, Seoul 136-791 (Korea, Republic of); Department of Energy and Environmental Engineering, Korea University of Science and Technology, 176 Gajungro Yuseong-gu, Daejeon 305-350 (Korea, Republic of)

    2016-05-15

    The authors report the surface morphology, optical, electrical, thermal and humidity impacts, and electromagnetic interference properties of fluorine-doped tin oxide (SnO{sub 2}:F or “FTO”) thin films on a flexible polyethylene terephthalate (PET) substrate fabricated by a pilot-scale electron cyclotron resonance–metal organic chemical vapor deposition (PS ECR-MOCVD). The characteristics of large area FTO thin films were compared with a commercially available transparent conductive electrode made of tin-doped indium oxide (ITO), prepared with an identical film and PET thickness of 125 nm and 188 μm, respectively. The results revealed that the as-prepared FTO thin films exhibited comparable performances with the incumbent ITO films, including a high optical transmittance of 97% (substrate-subtracted), low electrical resistivity of about 5 × 10{sup −3} Ω cm, improved electrical and optical performances due to the external thermal and humidity impact, and an excellent shielding effectiveness of electromagnetic interference of nearly 2.3 dB. These excellent performances of the FTO thin films were strongly attributed to the design of the PS ECR-MOCVD, which enabled a uniform plasma environment resulting from a proper mixture of electromagnetic profiles and microwave power.

  7. Vapor-Phase Hydrodeoxygenation of Guaiacol to Aromatics over Pt/HBeta: Identification of the Role of Acid Sites and Metal Sites on the Reaction Pathway

    Energy Technology Data Exchange (ETDEWEB)

    Nie, Lei [Collaborative Innovation Center of Chemical Science and Engineering, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072 P.R. China; Institute for Integrated Catalysis, Pacific Northwest National Laboratory, P.O. Box 999 Richland WA 99352 USA; Peng, Bo [Institute for Integrated Catalysis, Pacific Northwest National Laboratory, P.O. Box 999 Richland WA 99352 USA; Zhu, Xinli [Collaborative Innovation Center of Chemical Science and Engineering, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072 P.R. China

    2018-02-05

    Hydrodeoxygenation of guaiacol, a phenolic compound derived from lignin fraction of biomass, over a Pt/HBeta catalyst at 350 °C and atmospheric pressure produces benzene, toluene, xylenes, and C9+ aromatics with yield of 42%, 29%, 12%, and 5%, respectively. Reaction pathways for conversion of two functional groups (hydroxyl and methoxyl) over the bifunctional catalyst were studied. Both guaiacol and intermediate products (catechol and cyclopentanone) were fed onto zeolite HBeta and Pt/SiO2 to identify the individual role of acid site and metal site. Acid sites (mainly Brønsted acid site, BAS) catalyze transalkylation and dehydroxylation reactions in sequence, producing phenol, cresols and xylenols as the major products at high conversion. Pt sites catalyze demethylation reaction resulting in catechol as the primary product, which can either be deoxygenated to phenol followed by phenol to benzene, or decarbonylated to cyclopentanone and further to butane. The close proximity of Pt and BAS in bifunctional Pt/HBeta enables both transalkylation and deoxygenation reactions with inhibited demethylation and decarbonylation reactions, producing aromatics as major final products with a total yield > 85%. Both activity and stability of bifunctional Pt/HBeta during hydrodeoxygenation of guaiacol is improved compared to HBeta and Pt/SiO2. The addition of water to the feed further improves the activity and stability via hydrolysis of O-CH3 bond of guaiacol on BAS and removing coke around Pt.

  8. Physical model for vaporization

    OpenAIRE

    Garai, Jozsef

    2006-01-01

    Based on two assumptions, the surface layer is flexible, and the internal energy of the latent heat of vaporization is completely utilized by the atoms for overcoming on the surface resistance of the liquid, the enthalpy of vaporization was calculated for 45 elements. The theoretical values were tested against experiments with positive result.

  9. Petroleum Vapor - Field Technical

    Science.gov (United States)

    The screening approach being developed by EPA OUST to evaluate petroleum vapor intrusion (PVI) requires information that has not be routinely collected in the past at vapor intrusion sites. What is the best way to collect this data? What are the relevant data quality issues and ...

  10. Low temperature vapor phase digestion of graphite

    Energy Technology Data Exchange (ETDEWEB)

    Pierce, Robert A.

    2017-04-18

    A method for digestion and gasification of graphite for removal from an underlying surface is described. The method can be utilized to remove graphite remnants of a formation process from the formed metal piece in a cleaning process. The method can be particularly beneficial in cleaning castings formed with graphite molding materials. The method can utilize vaporous nitric acid (HNO.sub.3) or vaporous HNO.sub.3 with air/oxygen to digest the graphite at conditions that can avoid damage to the underlying surface.

  11. Piezoelectric trace vapor calibrator

    International Nuclear Information System (INIS)

    Verkouteren, R. Michael; Gillen, Greg; Taylor, David W.

    2006-01-01

    The design and performance of a vapor generator for calibration and testing of trace chemical sensors are described. The device utilizes piezoelectric ink-jet nozzles to dispense and vaporize precisely known amounts of analyte solutions as monodisperse droplets onto a hot ceramic surface, where the generated vapors are mixed with air before exiting the device. Injected droplets are monitored by microscope with strobed illumination, and the reproducibility of droplet volumes is optimized by adjustment of piezoelectric wave form parameters. Complete vaporization of the droplets occurs only across a 10 deg. C window within the transition boiling regime of the solvent, and the minimum and maximum rates of trace analyte that may be injected and evaporated are determined by thermodynamic principles and empirical observations of droplet formation and stability. By varying solution concentrations, droplet injection rates, air flow, and the number of active nozzles, the system is designed to deliver--on demand--continuous vapor concentrations across more than six orders of magnitude (nominally 290 fg/l to 1.05 μg/l). Vapor pulses containing femtogram to microgram quantities of analyte may also be generated. Calibrated ranges of three explosive vapors at ng/l levels were generated by the device and directly measured by ion mobility spectrometry (IMS). These data demonstrate expected linear trends within the limited working range of the IMS detector and also exhibit subtle nonlinear behavior from the IMS measurement process

  12. High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.

    Science.gov (United States)

    Ra, Yong-Ho; Navamathavan, R; Park, Ji-Hyeon; Lee, Cheul-Ro

    2013-03-01

    This article describes the growth and device characteristics of vertically aligned high-quality uniaxial p-GaN/InxGa1-xN/GaN multiple quantum wells (MQW)/n-GaN nanowires (NWs) on Si(111) substrates grown by metal-organic chemical vapor deposition (MOCVD) technique. The resultant nanowires (NWs), with a diameter of 200-250 nm, have an average length of 2 μm. The feasibility of growing high-quality NWs with well-controlled indium composition MQW structure is demonstrated. These resultant NWs grown on Si(111) substrates were utilized for fabricating vertical-type light-emitting diodes (LEDs). The steep and intense photoluminescence (PL) and cathodoluminescence (CL) spectra are observed, based on the strain-free NWs on Si(111) substrates. High-resolution transmission electron microscopy (HR-TEM) analysis revealed that the MQW NWs are grown along the c-plane with uniform thickness. The current-voltage (I-V) characteristics of these NWs exhibited typical p-n junction LEDs and showed a sharp onset voltage at 2.75 V in the forward bias. The output power is linearly increased with increasing current. The result indicates that the pulsed MOCVD technique is an effective method to grow uniaxial p-GaN/InxGa1-xN/GaN MQW/n-GaN NWs on Si(111), which is more advantageous than other growth techniques, such as molecular beam epitaxy. These results suggest the uniaxial NWs are promising to allow flat-band quantum structures, which can enhance the efficiency of LEDs.

  13. Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

    Energy Technology Data Exchange (ETDEWEB)

    Ayari, Taha; Li, Xin; Voss, Paul L.; Ougazzaden, Abdallah, E-mail: aougazza@georgiatech-metz.fr [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz (France); Sundaram, Suresh; El Gmili, Youssef [Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz (France); Salvestrini, Jean Paul [Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz (France); Université de Lorraine, LMOPS, EA 4423, 57070 Metz (France)

    2016-04-25

    Recent advances in epitaxial growth have led to the growth of III-nitride devices on 2D layered h-BN. This advance has the potential for wafer-scale transfer to arbitrary substrates, which could improve the thermal management and would allow III-N devices to be used more flexibly in a broader range of applications. We report wafer scale exfoliation of a metal organic vapor phase epitaxy grown InGaN/GaN Multi Quantum Well (MQW) structure from a 5 nm thick h-BN layer that was grown on a 2-inch sapphire substrate. The weak van der Waals bonds between h-BN atomic layers break easily, allowing the MQW structure to be mechanically lifted off from the sapphire substrate using a commercial adhesive tape. This results in the surface roughness of only 1.14 nm on the separated surface. Structural characterizations performed before and after the lift-off confirm the conservation of structural properties after lift-off. Cathodoluminescence at 454 nm was present before lift-off and 458 nm was present after. Electroluminescence near 450 nm from the lifted-off structure has also been observed. These results show that the high crystalline quality ultrathin h-BN serves as an effective sacrificial layer—it maintains performance, while also reducing the GaN buffer thickness and temperature ramps as compared to a conventional two-step growth method. These results support the use of h-BN as a low-tack sacrificial underlying layer for GaN-based device structures and demonstrate the feasibility of large area lift-off and transfer to any template, which is important for industrial scale production.

  14. Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001 Patterned Si Substrates by Metal Organic Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Ludovico Megalini

    2018-02-01

    Full Text Available We report on the use of InGaAsP strain-compensated superlattices (SC-SLs as a technique to reduce the defect density of Indium Phosphide (InP grown on silicon (InP-on-Si by Metal Organic Chemical Vapor Deposition (MOCVD. Initially, a 2 μm thick gallium arsenide (GaAs layer was grown with very high uniformity on exact oriented (001 300 mm Si wafers; which had been patterned in 90 nm V-grooved trenches separated by silicon dioxide (SiO2 stripes and oriented along the [110] direction. Undercut at the Si/SiO2 interface was used to reduce the propagation of defects into the III–V layers. Following wafer dicing; 2.6 μm of indium phosphide (InP was grown on such GaAs-on-Si templates. InGaAsP SC-SLs and thermal annealing were used to achieve a high-quality and smooth InP pseudo-substrate with a reduced defect density. Both the GaAs-on-Si and the subsequently grown InP layers were characterized using a variety of techniques including X-ray diffraction (XRD; atomic force microscopy (AFM; transmission electron microscopy (TEM; and electron channeling contrast imaging (ECCI; which indicate high-quality of the epitaxial films. The threading dislocation density and RMS surface roughness of the final InP layer were 5 × 108/cm2 and 1.2 nm; respectively and 7.8 × 107/cm2 and 10.8 nm for the GaAs-on-Si layer.

  15. Improvements to vapor generators

    International Nuclear Information System (INIS)

    Keller, Arthur; Monroe, Neil.

    1976-01-01

    A supporting system is proposed for vapor generators of the 'supported' type. Said supporting system is intended to compensate the disparities of thermal expansion due to the differences in the vertical dimensions of the tubes in the walls of the combustion chamber and their collectors compared to that of the balloon tanks and the connecting tube clusters of vaporization, the first one being longer than the second ones. Said system makes it possible to build said combustion chamber higher than the balloon tanks and the tube clusters of vaporization. The capacity of steam production is thus enhanced [fr

  16. Apparatus and method for removing mercury vapor from a gas stream

    Science.gov (United States)

    Ganesan, Kumar [Butte, MT

    2008-01-01

    A metallic filter effectively removes mercury vapor from gas streams. The filter captures the mercury which then can be released and collected as product. The metallic filter is a copper mesh sponge plated with a six micrometer thickness of gold. The filter removes up to 90% of mercury vapor from a mercury contaminated gas stream.

  17. Thin films of mixed metal compounds

    Science.gov (United States)

    Mickelsen, Reid A.; Chen, Wen S.

    1985-01-01

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  18. Gasoline Reid Vapor Pressure

    Science.gov (United States)

    EPA regulates the vapor pressure of gasoline sold at retail stations during the summer ozone season to reduce evaporative emissions from gasoline that contribute to ground-level ozone and diminish the effects of ozone-related health problems.

  19. R-22 vapor explosions

    International Nuclear Information System (INIS)

    Anderson, R.P.; Armstrong, D.R.

    1977-01-01

    Previous experimental and theoretical studies of R-22 vapor explosions are reviewed. Results from two experimental investigations of vapor explosions in a medium scale R-22/water system are reported. Measurements following the drop of an unrestrained mass of R-22 into a water tank demonstrated the existence of two types of interaction behavior. Release of a constrained mass of R-22 beneath the surface of a water tank improved the visual resolution of the system thus allowing identification of two interaction mechansims: at low water temperatures, R-22/water contact would produce immediate violent boiling; at high water temperatures a vapor film formed around its R-22 as it was released, explosions were generated by a surface wave which initiated at a single location and propagated along the vapor film as a shock wave. A new vapor explosion model is proposed, it suggests explosions are the result of a sequence of three independent steps: an initial mixing phase, a trigger and growth phase, and a mature phase where a propagating shock wave accelerates the two liquids into a collapsing vapor layer causing a high velocity impact which finely fragments and intermixes the two liquids

  20. Vapor-transport of tungsten and its geologic application

    Energy Technology Data Exchange (ETDEWEB)

    Shibue, Y [Hyogo Univ. of Teacher Education, Hyogo (Japan)

    1988-11-10

    The volatility of tungsten in a hydrous system at elevated temperatures and pressures was examined, and a tentative model for the enrichment of tungsten in hydrothermal solutions for the deposits related to granitic activities was proposed. To produce vapor-saturated solution, 17 or 15ml of 20wt% NaCl solution was introduced into an autoclave. Ca(OH){sub 2} for tungsten and H{sub 2}WO{sub 4} for base metals were used as vapor-captures, and run products were identified by X-ray powder diffractometry. The results suggested that the ratio of tungsten to base metals was higher in a vapor phase than in a liquid phase, and more enrichment of tungsten in the vapor phase occurred at higher temperature and pressure under the coexistence of the vapor and liquid phase. The tentative model emphasizing the vapor-transport of tungsten could explain the presence of tungsten deposits without large mineralization of base metals. Geological schematic model for the generation of the hydrothermal solution enriched in tungsten compared with base metals was illustrated based on above mentioned results. 21 refs., 3 figs.

  1. Study of Laser Created Metal Vapor Plasmas.

    Science.gov (United States)

    1979-11-16

    Leventhal(1 indicate a value closer to 10-1 cm. might be expected. In the case of’ laser induced penniinf, ionization., wec -,;4-,rit LIP 32 LIP L J where...modified Kramer’s formulae.(25) In figure 11 we demonstrate the impact of associative ionization and laser induced penning ionization upon the temporal...34Laser Induced Fluorescence and Environmental Sensing", Invited paper for Optical Society of America, Topical Mcetixg on "Applications of Laser

  2. Collapsing criteria for vapor film around solid spheres as a fundamental stage leading to vapor explosion

    International Nuclear Information System (INIS)

    Freud, Roy; Harari, Ronen; Sher, Eran

    2009-01-01

    Following a partial fuel-melting accident, a Fuel-Coolant Interaction (FCI) can result with the fragmentation of the melt into tiny droplets. A vapor film is then formed between the melt fragments and the coolant, while preventing a contact between them. Triggering, propagation and expansion typically follow the premixing stage. In the triggering stage, vapor film collapse around one or several of the fragments occurs. This collapse can be the result of fragments cooling, a sort of mechanical force, or by any other means. When the vapor film collapses and the coolant re-establishes contact with the dry surface of the hot melt, it may lead to a very rapid and rather violent boiling. In the propagation stage the shock wave front leads to stripping of the films surrounding adjacent droplets which enhance the fragmentation and the process escalates. During this process a large quantity of liquid vaporizes and its expansion can result in destructive mechanical damage to the surrounding structures. This multiphase thermal detonation in which high pressure shock wave is formed is regarded as 'vapor explosion'. The film boiling and its possible collapse is a fundamental stage leading to vapor explosion. If the interaction of the melt and the coolant does not result in a film boiling, no explosion occurs. Many studies have been devoted to determine the minimum temperature and heat flux that is required to maintain a film boiling. The present experimental study examines the minimum temperature that is required to maintain a film boiling around metal spheres immersed into a liquid (subcooled distilled water) reservoir. In order to simulate fuel fragments that are small in dimension and has mirror-like surface, small spheres coated with anti-oxidation layer were used. The heat flux from the spheres was calculated from the sphere's temperature profiles and the sphere's properties. The vapor film collapse was associated with a sharp rise of the heat flux during the cooling

  3. The tracking of interfaces in an electron-beam vaporizer

    International Nuclear Information System (INIS)

    Westerberg, K.W.; McClelland, M.A.; Finlayson, B.A.

    1993-03-01

    A numerical analysis is made of the material and energy flow in an electron beam vaporizer. In this system the energy from an electron beam heats metal confined in a water-cooled crucible. Metal is vaporized from a liquid pool circulating in a shell of its own solid. A modified Galerkin finite element method is used to calculate the flow and temperature fields along with the interface locations. The mesh is parameterized with spines which stretch and pivot as the phase boundaries move. The discretized equations are arranged in an ''arrow'' matrix and solved using the Newton-Raphson method. Results are given for an experimental aluminum vaporizer. The effects of buoyancy and capillary driven flow are included along with the surface contributions of vapor thrust, latent heat, thermal radiation, and crucible contact resistance

  4. Microstructural and superconducting properties of high current metal-organic chemical vapor deposition YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} coated conductor wires

    Energy Technology Data Exchange (ETDEWEB)

    Holesinger, T G; Maiorov, B; Ugurlu, O; Civale, L [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Chen, Y; Xiong, X; Xie, Y; Selvamanickam, V [SuperPower, Inc., Schenectady, NY 12304 (United States)

    2009-04-15

    Metal-organic chemical vapor deposition (MOCVD) on flexible, ion beam assisted deposition MgO templates has been used to produce high critical current density (J{sub c}) (Y,Sm){sub 1}Ba{sub 2}Cu{sub 3}O{sub y} (REBCO) films suitable for use in producing practical high temperature superconducting (HTS) coated conductor wires. Thick films on tape were produced with sequential additions of 0.7 {mu}m of REBCO via a reel-to-reel progression through a custom-designed MOCVD reactor. Multi-pass processing for thick film deposition is critically dependent upon minimizing surface secondary phase formation. Critical currents (I{sub c}s) of up to 600 A/cm width (t = 2.8 {mu}m, J{sub c} = 2.6 MA cm{sup -2}, 77 K, self-field) were obtained in short lengths of HTS wires. These high performance MOCVD films are characterized by closely spaced (Y,Sm){sub 2}O{sub 3} nanoparticle layers that may be tilted relative to the film normal and REBCO orientation. Small shifts in the angular dependence of J{sub c} in low and intermediate applied magnetic fields can be associated with the tilted nanoparticle layers. Also present in these films were YCuO{sub 2} nanoplates aligned with the YBCO matrix (short dimension perpendicular to the film normal), threading dislocations, and oriented composite defects (OCDs). The latter structures consist of single or multiple a-axis oriented grains coated on each side with insulating (Y,Sm){sub 2}O{sub 3} or CuO. The OCDs formed a connected network of insulating phases by the end of the fourth pass. Subsequent attempts at adding additional layers did not increase I{sub c}. There is an inconsistency between the measured J{sub c} and the observed microstructural degradation that occurs with each additional layer, suggesting that previously deposited layers are improving with each repeated reactor pass. These dynamic changes suggest a role for post-processing to optimize superconducting properties of as-deposited films, addressing issues associated with

  5. The compositional, structural, and magnetic properties of a Fe{sub 3}O{sub 4}/Ga{sub 2}O{sub 3}/GaN spin injecting hetero-structure grown by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhonghua; Huang, Shimin [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Tang, Kun, E-mail: ktang@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Gu, Shulin, E-mail: slgu@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Zhu, Shunming [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Ye, Jiandong [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009 (China); Xu, Mingxiang [Department of Physics, Southeast University, Nanjing 210096 (China); Wang, Wei; Zheng, Youdou [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China)

    2016-12-01

    Highlights: • The Fe{sub 3}O{sub 4}/Ga{sub 2}O{sub 3}/GaN hetero-structure has been fabricated by MOCVD successfully. • The formation mechanism of different layers in sample was revealed in details. • The properties of the hetero-structure have been presented and discussed extensively. • The effect of Ga diffusion on the magnetic properties of Fe{sub 3}O{sub 4} film has been shown. - Abstract: In this article, the authors have designed and fabricated a Fe{sub 3}O{sub 4}/Ga{sub 2}O{sub 3}/GaN spin injecting hetero-structure by metal-organic chemical vapor deposition. The compositional, structural, and magnetic properties of the hetero-structure have been characterized and discussed. From the characterizations, the hetero-structure has been successfully grown generally. However, due to the unintentional diffusion of Ga ions from Ga{sub 2}O{sub 3}/GaN layers, the most part of the nominal Fe{sub 3}O{sub 4} layer is actually in the form of Ga{sub x}Fe{sub 3−x}O{sub 4} with gradually decreased x values from the Fe{sub 3}O{sub 4}/Ga{sub 2}O{sub 3} interface to the Fe{sub 3}O{sub 4} surface. Post-annealing process can further aggravate the diffusion. Due to the similar ionic radius of Ga and Fe, the structural configuration of the Ga{sub x}Fe{sub 3−x}O{sub 4} does not differ from that of pure Fe{sub 3}O{sub 4}. However, the ferromagnetism has been reduced with the incorporation of Ga into Fe{sub 3}O{sub 4}, which has been explained by the increased Yafet-Kittel angles in presence of considerable amount of Ga incorporation. A different behavior of the magnetoresistance has been found on the as-grown and annealed samples, which could be modelled and explained by the competition between the spin-dependent and spin-independent conduction channels. This work has provided detailed information on the interfacial properties of the Fe{sub 3}O{sub 4}/Ga{sub 2}O{sub 3}/GaN spin injecting hetero-structure, which is the solid basis for further improvement and application of

  6. Vapor pressures and enthalpies of vaporization of azides

    International Nuclear Information System (INIS)

    Verevkin, Sergey P.; Emel'yanenko, Vladimir N.; Algarra, Manuel; Manuel Lopez-Romero, J.; Aguiar, Fabio; Enrique Rodriguez-Borges, J.; Esteves da Silva, Joaquim C.G.

    2011-01-01

    Highlights: → We prepared and measured vapor pressures and vaporization enthalpies of 7 azides. → We examined consistency of new and available in the literature data. → Data for geminal azides and azido-alkanes selected for thermochemical calculations. - Abstract: Vapor pressures of some azides have been determined by the transpiration method. The molar enthalpies of vaporization Δ l g H m of these compounds were derived from the temperature dependencies of vapor pressures. The measured data sets were successfully checked for internal consistency by comparison with vaporization enthalpies of similarly structured compounds.

  7. Preparation and infrared absorption properties of buried SiC layers

    International Nuclear Information System (INIS)

    Yan Hui; Chen Guanghua; Wong, S.P.; Kwok, R.W.M.

    1997-01-01

    Buried SiC layers were formed by using a metal vapor vacuum arc (MEVVA) ion source, with C + ions implanted into Si substrates under different doses. In the present study, the extracted voltage was 50 kV and the ion dose was varied from 3.0 x 10 17 to 1.6 x 10 18 cm -2 . According to infrared absorption measurements, it was fount that the structure of the buried SiC layers depended on the ion dose. Moreover, the results also demonstrated that the buried SiC layers including cubic crystalline SiC could be synthesized at an averaged substrate temperature of lower than 400 degree C with the MEVVA ion source

  8. Vaporization of irradiated droplets

    International Nuclear Information System (INIS)

    Armstrong, R.L.; O'Rourke, P.J.; Zardecki, A.

    1986-01-01

    The vaporization of a spherically symmetric liquid droplet subject to a high-intensity laser flux is investigated on the basis of a hydrodynamic description of the system composed of the vapor and ambient gas. In the limit of the convective vaporization, the boundary conditions at the fluid--gas interface are formulated by using the notion of a Knudsen layer in which translational equilibrium is established. This leads to approximate jump conditions at the interface. For homogeneous energy deposition, the hydrodynamic equations are solved numerically with the aid of the CON1D computer code (''CON1D: A computer program for calculating spherically symmetric droplet combustion,'' Los Alamos National Laboratory Report No. LA-10269-MS, December, 1984), based on the implict continuous--fluid Eulerian (ICE) [J. Comput. Phys. 8, 197 (1971)] and arbitrary Lagrangian--Eulerian (ALE) [J. Comput. Phys. 14, 1227 (1974)] numerical mehtods. The solutions exhibit the existence of two shock waves propagating in opposite directions with respect to the contact discontinuity surface that separates the ambient gas and vapor

  9. Vapor liquid fraction determination

    International Nuclear Information System (INIS)

    1980-01-01

    This invention describes a method of measuring liquid and vapor fractions in a non-homogeneous fluid flowing through an elongate conduit, such as may be required with boiling water, non-boiling turbulent flows, fluidized bed experiments, water-gas mixing analysis, and nuclear plant cooling. (UK)

  10. Heat of vaporization spectrometer

    International Nuclear Information System (INIS)

    Edwards, D. Jr.

    1978-01-01

    Multilayer desorption measurements of various substances adsorbed on a stainless steel substrate are found to exhibit desorption profiles consistent with a zeroth order desorption model. The singleness of the desorption transients together with their narrow peak widths makes the technique ideally suited for a heat of vaporization spectrometer for either substance analysis or identification

  11. Enthalpy of Vaporization and Vapor Pressures: An Inexpensive Apparatus

    Science.gov (United States)

    Battino, Rubin; Dolson, David A.; Hall, Michael A.; Letcher, Trevor M.

    2007-01-01

    A simple and inexpensive method to determine the enthalpy of vaporization of liquids by measuring vapor pressure as a function of temperature is described. The vapor pressures measured with the stopcock cell were higher than the literature values and those measured with the sidearm rubber septum cell were both higher and lower than literature…

  12. A Local Propagation for Vapor Explosions

    International Nuclear Information System (INIS)

    Ochiai, M.; Bankoff, S.G.

    1976-01-01

    explosion can be made. Both theories postulate that spontaneous nucleation is a necessary requirement for vapor explosions. In the case of Freon-oil, which can be considered to be a 'well-wetted' system, this implies homogeneous nucleation. For metal-water systems, however, vapor-free heterogeneous nucleation may take place, in view of the unique surface properties of water. Indeed, for aqueous systems it is difficult to suppress very small pre-existing surface nuclei. The practical effect, however, is the same in that nucleation may occur in metal-water systems at liquid-liquid interfacial temperatures somewhat below the homogeneous nucleation temperature of water, but with comparable time scales and vapor pressures. Another important requirement common to both the splash and capture theories, as well as the Freon-oil data, is the necessity for film boiling to occur when the two liquids are initially mixed. This requirement is not satisfied by the sodium-UO 2 system, based on the Henry film bailing correlation. Rapid breakup therefore occurs as the two liquids are mixed, preventing a highly energetic interaction. Our current assessment, therefore, is that a sodium-UO 2 vapor explosion in a reactor environment is extremely unlikely

  13. Modification of medical metals by ion implantation of copper

    Science.gov (United States)

    Wan, Y. Z.; Xiong, G. Y.; Liang, H.; Raman, S.; He, F.; Huang, Y.

    2007-10-01

    The effect of copper ion implantation on the antibacterial activity, wear performance and corrosion resistance of medical metals including 317 L of stainless steels, pure titanium, and Ti-Al-Nb alloy was studied in this work. The specimens were implanted with copper ions using a MEVVA source ion implanter with ion doses ranging from 0.5 × 10 17 to 4 × 10 17 ions/cm 2 at an energy of 80 keV. The antibacterial effect, wear rate, and inflexion potential were measured as a function of ion dose. The results obtained indicate that copper ion implantation improves the antibacterial effect and wear behaviour for all the three medical materials studied. However, corrosion resistance decreases after ion implantation of copper. Experimental results indicate that the antibacterial property and corrosion resistance should be balanced for medical titanium materials. The marked deteriorated corrosion resistance of 317 L suggests that copper implantation may not be an effective method of improving its antibacterial activity.

  14. Vapor pressures and vapor compositions in equilibrium with hypostoichiometric plutonium dioxide at high temperatures

    International Nuclear Information System (INIS)

    Green, D.W.; Fink, J.K.; Leibowitz, L.

    1982-01-01

    Vapor pressures and vapor compositions have been calculated for 1500 less than or equal to T less than or equal to 4000 0 K. Thermodynamic functions for the condensed phase and for each of the gaseous species were combined with an oxygen-potential model extended into the liquid region to obtain the partial pressures of O 2 , O, Pu, PuO and PuO 2 . The calculated oxygen pressures increase very rapidly as stoichiometry is approached. At least part of this increase is a consequence of the exclusion of Pu 6 + from the oxygen-potential model. No reliable method was found to estimate the importance of this ion. As a result of large oxygen potentials at high temperatures, extremely high total pressures that produced unreasonably high vapor densities were calculated. The highest temperature was therefore limited to 400 K, and the range of oxygen-to-metal ratios was limited to 1.994 to 1.70. These calculations show that vapor in equilibrium with hypostoichiometric plutonium dioxide is poorly approximated as PuO 2 for most of the temperture and composition range of interest. The vapor is much more oxygen-rich than the condensed phase. Implications for the (U,Pu)O/sub 2-x/ system are discussed

  15. Growth and Characterization of (211)B Cadmium Telluride Buffer Layer Grown by Metal-organic Vapor Phase Epitaxy on Nanopatterned Silicon for Mercury Cadmium Telluride Based Infrared Detector Applications

    Science.gov (United States)

    Shintri, Shashidhar S.

    Mercury cadmium telluride (MCT or Hg1-xCdxTe) grown by molecular beam epitaxy (MBE) is presently the material of choice for fabricating infrared (IR) detectors used in night vision based military applications. The focus of MCT epitaxy has gradually shifted since the last decade to using Si as the starting substrate since it offers several advantages. But the ˜19 % lattice mismatch between MCT and Si generates lots of crystal defects some of which degrade the performance of MCT devices. Hence thick CdTe films are used as buffer layers on Si to accommodate the defects. However, growth of high quality single crystal CdTe on Si is challenging and to date, the best MBE CdTe/Si reportedly has defects in the mid-105 cm -2 range. There is a critical need to reduce the defect levels by at least another order of magnitude, which is the main motivation behind the present work. The use of alternate growth technique called metal-organic vapor phase epitaxy (MOVPE) offers some advantages over MBE and in this work MOVPE has been employed to grow the various epitaxial films. In the first part of this work, conditions for obtaining high quality (211)B CdTe epitaxy on (211)Si were achieved, which also involved studying the effect of having additional intermediate buffer layers such as Ge and ZnTe and incorporation of in-situ thermal cyclic annealing (TCA) to reduce the dislocation density. A critical problem of Si cross-contamination due to 'memory effect' of different reactant species was minimized by introducing tertiarybutylArsine (TBAs) which resulted in As-passivation of (211)Si. The best 8-10 µm thick CdTe films on blanket (non-patterned) Si had dislocations around 3×105 cm-2, which are the best reported by MOVPE till date and comparable to the highest quality films available by MBE. In the second part of the work, nanopatterned (211)Si was used to study the effect of patterning on the crystal quality of epitaxial CdTe. In one such study, patterning of ˜20 nm holes in SiO2

  16. Vapor pressure and enthalpy of vaporization of linear aliphatic alkanediamines

    International Nuclear Information System (INIS)

    Pozdeev, Vasiliy A.; Verevkin, Sergey P.

    2011-01-01

    Highlights: → We measured vapor pressure of diamines H 2 N-(CH 2 ) n -NH 2 with n = 3 to 12. → Vaporization enthalpies at 298 K were derived. → We examined consistency of new and available in the literature data. → Enthalpies of vaporization show linear dependence on numbers n. → Enthalpies of vaporization correlate linearly with Kovat's indices. - Abstract: Vapor pressures and the molar enthalpies of vaporization of the linear aliphatic alkanediamines H 2 N-(CH 2 ) n -NH 2 with n = (3 to 12) have been determined using the transpiration method. A linear correlation of enthalpies of vaporization (at T = 298.15 K) of the alkanediamines with the number n and with the Kovat's indices has been found, proving the internal consistency of the measured data.

  17. Radioisotope labeling technique for vapor density measurements of volatile inorganic species

    International Nuclear Information System (INIS)

    Peterson, E.J.; Caird, J.A.; Hessler, J.P.; Hoekstra, H.R.; Williams, C.W.

    1979-01-01

    A new method for complexed metal ion vapor density measurement involving labeling the metal ions of interest with a radioactive isotope is described. The isotope chosen in the present work is unstable and leads to emission of a characteristic γ ray. Thus the γ-counting rate was related to the number density of complexed metal ions in the vapor phase. This technique is applicable to the study of any volatile inorganic species, but in the present study has been used to measure vapor densities of complex species in the TbCl 3 -AlCl 3 system by using tracer 160 Tb. 4 figures, 2 tables

  18. Constrained Vapor Bubble Experiment

    Science.gov (United States)

    Gokhale, Shripad; Plawsky, Joel; Wayner, Peter C., Jr.; Zheng, Ling; Wang, Ying-Xi

    2002-11-01

    Microgravity experiments on the Constrained Vapor Bubble Heat Exchanger, CVB, are being developed for the International Space Station. In particular, we present results of a precursory experimental and theoretical study of the vertical Constrained Vapor Bubble in the Earth's environment. A novel non-isothermal experimental setup was designed and built to study the transport processes in an ethanol/quartz vertical CVB system. Temperature profiles were measured using an in situ PC (personal computer)-based LabView data acquisition system via thermocouples. Film thickness profiles were measured using interferometry. A theoretical model was developed to predict the curvature profile of the stable film in the evaporator. The concept of the total amount of evaporation, which can be obtained directly by integrating the experimental temperature profile, was introduced. Experimentally measured curvature profiles are in good agreement with modeling results. For microgravity conditions, an analytical expression, which reveals an inherent relation between temperature and curvature profiles, was derived.

  19. Vapor condensation device

    International Nuclear Information System (INIS)

    Sakurai, Manabu; Hirayama, Fumio; Kurosawa, Setsumi; Yoshikawa, Jun; Hosaka, Seiichi.

    1992-01-01

    The present invention enables to separate and remove 14 C as CO 3 - ions without condensation in a vapor condensation can of a nuclear facility. That is, the vapor condensation device of the nuclear facility comprises (1) a spray pipe for spraying an acidic aqueous solution to the evaporation surface of an evaporation section, (2) a spray pump for sending the acidic aqueous solution to the spray pipe, (3) a tank for storing the acidic aqueous solution, (4) a pH sensor for detecting pH of the evaporation section, (5) a pH control section for controlling the spray pump, depending on the result of the detection of the pH sensor. With such a constitution, the pH of liquid wastes on the vaporization surface is controlled to 7 by spraying an aqueous solution of dilute sulfuric acid to the evaporation surface, thereby enabling to increase the transfer rate of 14 C to condensates to 60 to 70%. If 14 C is separated and removed as a CO 2 gas from the evaporation surface, the pH of the liquid wastes returns to the alkaline range of 9 to 10 and the liquid wastes are returned to a heating section. The amount of spraying the aqueous solution of dilute sulfuric acid can be controlled till the pH is reduced to 5. (I.S.)

  20. The vapor pressures of explosives

    Energy Technology Data Exchange (ETDEWEB)

    Ewing, Robert G.; Waltman, Melanie J.; Atkinson, David A.; Grate, Jay W.; Hotchkiss, Peter

    2013-01-05

    The vapor pressures of many explosive compounds are extremely low and thus determining accurate values proves difficult. Many researchers, using a variety of methods, have measured and reported the vapor pressures of explosives compounds at single temperatures, or as a function of temperature using vapor pressure equations. There are large variations in reported vapor pressures for many of these compounds, and some errors exist within individual papers. This article provides a review of explosive vapor pressures and describes the methods used to determine them. We have compiled primary vapor pressure relationships traceable to the original citations and include the temperature ranges for which they have been determined. Corrected values are reported as needed and described in the text. In addition, after critically examining the available data, we calculate and tabulate vapor pressures at 25 °C.

  1. VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY COAL TARS

    Energy Technology Data Exchange (ETDEWEB)

    Eric M. Suuberg; Vahur Oja

    1997-07-01

    This project had as its main focus the determination of vapor pressures of coal pyrolysis tars. It involved performing measurements of these vapor pressures and from them, developing vapor pressure correlations suitable for use in advanced pyrolysis models (those models which explicitly account for mass transport limitations). This report is divided into five main chapters. Each chapter is a relatively stand-alone section. Chapter A reviews the general nature of coal tars and gives a summary of existing vapor pressure correlations for coal tars and model compounds. Chapter B summarizes the main experimental approaches for coal tar preparation and characterization which have been used throughout the project. Chapter C is concerned with the selection of the model compounds for coal pyrolysis tars and reviews the data available to us on the vapor pressures of high boiling point aromatic compounds. This chapter also deals with the question of identifying factors that govern the vapor pressures of coal tar model materials and their mixtures. Chapter D covers the vapor pressures and heats of vaporization of primary cellulose tars. Chapter E discusses the results of the main focus of this study. In summary, this work provides improved understanding of the volatility of coal and cellulose pyrolysis tars. It has resulted in new experimentally verified vapor pressure correlations for use in pyrolysis models. Further research on this topic should aim at developing general vapor pressure correlations for all coal tars, based on their molecular weight together with certain specific chemical characteristics i.e. hydroxyl group content.

  2. Metal impurity injection into DIVA plasmas with a Q-switched laser beam

    International Nuclear Information System (INIS)

    Yamauchi, Toshihiko; Nagami, Masayuki; Sengoku, Seio; Kumagai, Katsuaki

    1978-08-01

    Metal impurity injection into DIVA plasmas with a Q-switched ruby laser beam is described. Metal materials used are aluminium and gold. The Q-switched laser beam is incident onto a thin metal film thickness about 0.2 μm coated on pyrex glass plate surface. The metal film is vaporized by the laser beam and injected into DIVA plasma. The laser-beam injection method has advantages of sharp profile of vaporized metal, easy control of vaporized metal quantity and injection rate control of metal vapor. (author)

  3. Uptake of mercury vapor by wheat. An assimilation model

    International Nuclear Information System (INIS)

    Browne, C.L.; Fang, S.C.

    1978-01-01

    Using a whole-plant chamber and 203 Hg-labeled mercury, a quantitative study was made of the effect of environmental parameters on the uptake, by wheat (Triticum aestivum), of metallic mercury vapor, an atmospheric pollutant. Factors were examined in relation to their influence on components of the gas-assimilation model, U(Hg) = (C/sub A' -- C/sub L')/(r/sub L.Hg/ + r/sub M.Hg/) where U(Hg) is the rate of mercury uptake per unit leaf surface, C/sub A'/ is the ambient mercury vapor concentration, C/sub L'/ is the mercury concentration at immobilization sites within the plant (assumed to be zero), r/sub L.Hg/ is the total leaf resistance to mercury vapor exchange, and r/sub M.Hg/ is a residual term to account for unexplained physical and biochemical resistances to mercury vapor uptake. Essentially all mercury vapor uptake was confined to the leaves. r/sub L.Hg/ was particularly influenced by illumination (0 to 12.8 klux), but unaffected by ambient temperature (17 to 33 0 C) and mercury vapor concentration (0 to 40 μg m -3 ). The principal limitation to mercury vapor uptake was r/sub M.Hg/, which was linearly related to leaf temperature, but unaffected by mercury vapor concentration and illumination, except for apparent high values in darkness. Knowing C/sub A'/ and estimating r/sub L.Hg/ and r/sub M.Hg/ from experimental data, mercury vapor uptake by wheat in light was accurately predicted for several durations of exposure using the above model

  4. Liquid--liquid contact in vapor explosion

    International Nuclear Information System (INIS)

    Segev, A.

    1978-08-01

    The contact of two liquid materials, one of which is at a temperature substantially above the boiling point of the other, can lead to fast energy conversion and a subsequent shock wave. This well-known phenomenon is called a ''vapor explosion.'' One method of producing intimate, liquid--liquid contact (which is known to be a necessary condition for vapor explosion) is a shock tube configuration. Such experiments in which water was impacted upon molten aluminum showed that very high pressures, even larger than the thermodynamic critical pressure, could occur. The mechanism by which such sharp pressure pulses are generated is not yet clear. In this experiment cold liquids (Freon-11, Freon-22, water, or butanol) were impacted upon various hot materials (mineral oil, silicone oil, water, mercury, molten Wood's metal or molten salt mixture). The main conclusion from the experimental study is that hydrodynamic effects may be very significant in any shock tube analyses, especially when multiple interactions are observed. A theoretical study was performed to check the possibility of vapor film squeezing (between a drop in film boiling and a surface) as a controlling mechanism for making liquid--liquid contact. Using experimental data, the film thickness was calculated and it was found to be too thick for any conceivable film rupture mechanism. It was suggested that the coalescence is a two-stage process, in which the controlling stage depends mainly on temperature and surface properties and can be described as the ability of cold liquid to spread on a hot surface

  5. Nuclear system vaporization

    International Nuclear Information System (INIS)

    Bougault, R.; Brou, R.; Colin, J.; Cussol, D.; Durand, D.; Le Brun, C.; Lecolley, J.F.; Lopez, O.; Louvel, M.; Nakagawa, T.; Peter, J.; Regimbart, R.; Steckmeyer, J.C.; Tamain, B.; Vient, E.; Yuasa-Nakagawa, K.; Wieloch, A.

    1998-01-01

    A particular case of the hot nuclei de-excitation is the total nuclear dislocation into light particles (n, p, d, t, 3 He and α). Such events were first observed at bombarding energies lower than 100 MeV/nucleon due to high detection performances of the INDRA multidetector. The light system Ar + Ni was studied at several bombarding energies ranging from 32 to 95 MeV/nucleon. The events associated to a total vaporization of the system occur above the energy threshold of ∼ 50 MeV/nucleon. A study of the form of these events shows that we have essentially two sources. The excitation energy of these sources may be determined by means of the kinematic properties of their de-excitation products. A preliminary study results in excitation energy values of the order 10 - 14 MeV/nucleon. The theoretical calculation based on a statistical model modified to take into account high excitation energies and excited levels in the lightest nuclei predicts that the vaporization of the two partner nuclei in the Ar + Ni system takes place when the excitation energy exceeds 12 MeV/nucleon what is qualitatively in agreement with the values deduced from calorimetric analysis

  6. Development of halide copper vapor laser (the characteristics of using Cul)

    International Nuclear Information System (INIS)

    Oouti, Kazumi; Wada, Yukio; Sasao, Nobuyuki

    1990-01-01

    We are developing halide copper vapor laser that is high efficiency and high reputation rate visible laser. Halide copper vapor laser uses halide copper of copper vapor source. It melts low temperature in comporison with metal copper, because laser tube structure is very simple and it can operate easy. This time, we experiment to use Cul for copper vapor source. We resulted maximum output energy 17.8 (W) and maximum efficiency 0.78 (%) when operate condition was reputation rate 30 (kHz), gas pressure 90 (Torr), charging voltage 13 (kV). (author)

  7. Collapsing criteria for vapor film around solid spheres as a fundamental stage leading to vapor explosion

    Energy Technology Data Exchange (ETDEWEB)

    Freud, Roy [Nuclear Research Center - Negev, Beer-Sheva (Israel)], E-mail: freud@bgu.ac.il; Harari, Ronen [Nuclear Research Center - Negev, Beer-Sheva (Israel); Sher, Eran [Pearlstone Center for Aeronautical Studies, Department of Mechanical Engineering, Ben-Gurion University, Beer-Sheva (Israel)

    2009-04-15

    Following a partial fuel-melting accident, a Fuel-Coolant Interaction (FCI) can result with the fragmentation of the melt into tiny droplets. A vapor film is then formed between the melt fragments and the coolant, while preventing a contact between them. Triggering, propagation and expansion typically follow the premixing stage. In the triggering stage, vapor film collapse around one or several of the fragments occurs. This collapse can be the result of fragments cooling, a sort of mechanical force, or by any other means. When the vapor film collapses and the coolant re-establishes contact with the dry surface of the hot melt, it may lead to a very rapid and rather violent boiling. In the propagation stage the shock wave front leads to stripping of the films surrounding adjacent droplets which enhance the fragmentation and the process escalates. During this process a large quantity of liquid vaporizes and its expansion can result in destructive mechanical damage to the surrounding structures. This multiphase thermal detonation in which high pressure shock wave is formed is regarded as 'vapor explosion'. The film boiling and its possible collapse is a fundamental stage leading to vapor explosion. If the interaction of the melt and the coolant does not result in a film boiling, no explosion occurs. Many studies have been devoted to determine the minimum temperature and heat flux that is required to maintain a film boiling. The present experimental study examines the minimum temperature that is required to maintain a film boiling around metal spheres immersed into a liquid (subcooled distilled water) reservoir. In order to simulate fuel fragments that are small in dimension and has mirror-like surface, small spheres coated with anti-oxidation layer were used. The heat flux from the spheres was calculated from the sphere's temperature profiles and the sphere's properties. The vapor film collapse was associated with a sharp rise of the heat flux

  8. Chemical vapor deposition of yttria stabilized zirconia in porous substrates

    International Nuclear Information System (INIS)

    Carolan, M.F.; Michaels, J.N.

    1987-01-01

    Electrochemical vapor deposition (EVD) of yttria stabilized zirconia (YSZ) is the preferred route to the production of thin films of YSZ on porous substrates. This process has been used in the construction of both fuel cells and steam electrolyzers. A critical aspect of the EVD process is an initial chemical vapor deposition phase in which the pores of a porous substrate are plugged by YSZ. In this process, water vapor and a mixture of gaseous zirconium chloride and yttrium chloride diffuse into the porous substrate from opposite sides and react to form YSZ and HCl ga. During the second stage of the process a continuous dense film of electrolyte is formed by a tarnishing-type process. Experimentally it is observed that the pores plug within a few pore diameters of the metal chloride face of the substrate. A kinetic rate expression that is first order in metal chloride but zero order in water is best able to explain this phenomenon. With this rate expression, the pores always plug near the metal chloride face. The model predicts less pore narrowing to occur as the ratio of the reaction rate to the diffusion rate of the metal chloride is increased. A kinetic rate expression that is first order in both water and metal chloride predicts that the pores plug much deeper in the substrate

  9. Microcomponents manufacturing for precise devices by copper vapor laser

    Science.gov (United States)

    Gorny, Sergey; Nikonchuk, Michail O.; Polyakov, Igor V.

    2001-06-01

    This paper presents investigation results of drilling of metal microcomponents by copper vapor laser. The laser consists of master oscillator - spatial filter - amplifier system, electronics switching with digital control of laser pulse repetition rate and quantity of pulses, x-y stage with computer control system. Mass of metal, removed by one laser pulse, is measured and defined by means of diameter and depth of holes. Interaction of next pulses on drilled material is discussed. The difference between light absorption and metal evaporation processes is considered for drilling and cutting. Efficiency of drilling is estimated by ratio of evaporation heat and used laser energy. Maximum efficiency of steel cutting is calculated with experimental data of drilling. Applications of copper vapor laser for manufacturing is illustrated by such microcomponents as pin guide plate for printers, stents for cardio surgery, encoded disks for security systems and multiple slit masks for spectrophotometers.

  10. Chemical vapor composites (CVC)

    International Nuclear Information System (INIS)

    Reagan, P.

    1993-01-01

    The Chemical Vapor Composite, CVC trademark , process fabricates composite material by simply mixing particles (powders and or fibers) with CVD reactants which are transported and co-deposited on a hot substrate. A key feature of the CVC process is the control provided by varing the density, geometry (aspect ratio) and composition of the entrained particles in the matrix material, during deposition. The process can fabricate composite components to net shape (± 0.013 mm) on a machined substrate in a single step. The microstructure of the deposit is described and several examples of different types of particles in the matrix are illustrated. Mechanical properties of SiC composite material fabricated with SiC powder and fiber will be presented. Several examples of low cost ceramic composite products will be shown. (orig.)

  11. Iron bromide vapor laser

    Science.gov (United States)

    Sukhanov, V. B.; Shiyanov, D. V.; Trigub, M. V.; Dimaki, V. A.; Evtushenko, G. S.

    2016-03-01

    We have studied the characteristics of a pulsed gas-discharge laser on iron bromide vapor generating radiation with a wavelength of 452.9 nm at a pulse repetition frequency (PRF) of 5-30 kHz. The maximum output power amounted to 10 mW at a PRF within 5-15 kHz for a voltage of 20-25 kV applied to electrodes of the discharge tube. Addition of HBr to the medium produced leveling of the radial profile of emission. Initial weak lasing at a wavelength of 868.9 nm was observed for the first time, which ceased with buildup of the main 452.9-nm line.

  12. Vapor-droplet flow equations

    International Nuclear Information System (INIS)

    Crowe, C.T.

    1975-01-01

    General features of a vapor-droplet flow are discussed and the equations expressing the conservation of mass, momentum, and energy for the vapor, liquid, and mixture using the control volume approach are derived. The phenomenological laws describing the exchange of mass, momentum, and energy between phases are also reviewed. The results have application to development of water-dominated geothermal resources

  13. Method of purifying zirconium tetrachloride and hafnium tetrachloride in a vapor stream

    International Nuclear Information System (INIS)

    Snyder, T.S.; Stolz, R.A.

    1992-01-01

    This patent describes a method of purifying zirconium tetrachloride and hafnium tetrachloride in a vapor stream from a sand chlorinator in which the silicon and metals present in sand fed to the chlorinator are converted to chlorides at temperatures over about 800 degrees C. It comprises cooling a vapor stream from a sand chlorinator, the vapor stream containing principally silicon tetrachloride, zirconium tetrachloride, and hafnium tetrachloride contaminated with ferric chloride, to a temperature of from about 335 degrees C to about 600 degrees C; flowing the vapor stream through a gaseous diffusion separative barrier to produce a silicon tetrachloride-containing vapor stream concentrated in zirconium tetrachloride and hafnium tetrachloride and a silicon tetrachloride-containing vapor stream depleted in zirconium tetrachloride and hafnium tetrachloride; adsorbing the ferric chloride in the separative barrier; and recovering the silicon tetrachloride stream concentrated in zirconium tetrachloride and hafnium tetrachloride separately from the silicon tetrachloride stream depleted in zirconium tetrachloride and hafnium tetrachloride

  14. The SuperHILAC heavy ion intensity upgrade

    International Nuclear Information System (INIS)

    Feinberg, B.; Brown, I.G.

    1987-03-01

    A high current MEtal Vapor Vacuum Arc (MEVVA) ion source is to be installed in the third injector (Abel) at the SuperHILAC, representing the first accelerator use of this novel ion source. The MEVVA source has produced over 1 A of uranium in all charge states, with more than 100 electrical mA (emA) of U 5+ . Transport of the space-charge dominated beam through the charge-state analysis dipole will be enhanced by a 100 kV extractor voltage and neutralization by secondary electrons. In addition to the MEVVA source, other improvements already in place include a lower pressure in the Low Energy Beam Transport line (15.8 keV/AMU) to reduce charge exchange for the heavy elements, and the addition of a second 23 MHz buncher upstream of the Wideroe linac and two 70 MHz bunchers between the 23 MHz Wideroe and the 70 MHz Alvarez linacs. The project is expected to result in a fivefold increase in beam delivered to Bevatron experiments, increasing the extracted uranium beam to 5 x 10 7 ions/pulse

  15. Vapor pressure and enthalpy of vaporization of aliphatic propanediamines

    International Nuclear Information System (INIS)

    Verevkin, Sergey P.; Chernyak, Yury

    2012-01-01

    Highlights: ► We measured vapor pressure of four aliphatic 1,3-diamines. ► Vaporization enthalpies at 298 K were derived. ► We examined consistency of new and available data in the literature. ► A group-contribution method for prediction was developed. - Abstract: Vapor pressures of four aliphatic propanediamines including N-methyl-1,3-propanediamine (MPDA), N,N-dimethyl-1,3-propanediamine (DMPDA), N,N-diethyl-1,3-propanediamine (DEPDA) and N,N,N′,N′-tetramethyl-1,3-propanediamine (4MPDA) were measured using the transpiration method. The vapor pressures developed in this work and reported in the literature were used to derive molar enthalpy of vaporization values at the reference temperature 298.15 K. An internal consistency check of the enthalpy of vaporization was performed for the aliphatic propanediamines studied in this work. A group-contribution method was developed for the validation and prediction vaporization enthalpies of amines and diamines.

  16. A Citizen's Guide to Vapor Intrusion Mitigation

    Science.gov (United States)

    This guide describes how vapor intrusion is the movement of chemical vapors from contaminated soil and groundwater into nearby buildings.Vapors primarily enter through openings in the building foundation or basement walls.

  17. Vapor pressure measured with inflatable plastic bag

    Science.gov (United States)

    1965-01-01

    Deflated plastic bag in a vacuum chamber measures initial low vapor pressures of materials. The bag captures the test sample vapors and visual observation of the vapor-inflated bag under increasing external pressures yields pertinent data.

  18. The fabrication of vertically aligned and periodically distributed carbon nanotube bundles and periodically porous carbon nanotube films through a combination of laser interference ablation and metal-catalyzed chemical vapor deposition.

    Science.gov (United States)

    Yuan, Dajun; Lin, Wei; Guo, Rui; Wong, C P; Das, Suman

    2012-06-01

    Scalable fabrication of carbon nanotube (CNT) bundles is essential to future advances in several applications. Here, we report on the development of a simple, two-step method for fabricating vertically aligned and periodically distributed CNT bundles and periodically porous CNT films at the sub-micron scale. The method involves laser interference ablation (LIA) of an iron film followed by CNT growth via iron-catalyzed chemical vapor deposition. CNT bundles with square widths ranging from 0.5 to 1.5 µm in width, and 50-200 µm in length, are grown atop the patterned catalyst over areas spanning 8 cm(2). The CNT bundles exhibit a high degree of control over square width, orientation, uniformity, and periodicity. This simple scalable method of producing well-placed and oriented CNT bundles demonstrates a high application potential for wafer-scale integration of CNT structures into various device applications, including IC interconnects, field emitters, sensors, batteries, and optoelectronics, etc.

  19. Passive vapor extraction feasibility study

    International Nuclear Information System (INIS)

    Rohay, V.J.

    1994-01-01

    Demonstration of a passive vapor extraction remediation system is planned for sites in the 200 West Area used in the past for the disposal of waste liquids containing carbon tetrachloride. The passive vapor extraction units will consist of a 4-in.-diameter pipe, a check valve, a canister filled with granular activated carbon, and a wind turbine. The check valve will prevent inflow of air that otherwise would dilute the soil gas and make its subsequent extraction less efficient. The granular activated carbon is used to adsorb the carbon tetrachloride from the air. The wind turbine enhances extraction rates on windy days. Passive vapor extraction units will be designed and operated to meet all applicable or relevant and appropriate requirements. Based on a cost analysis, passive vapor extraction was found to be a cost-effective method for remediation of soils containing lower concentrations of volatile contaminants. Passive vapor extraction used on wells that average 10-stdft 3 /min air flow rates was found to be more cost effective than active vapor extraction for concentrations below 500 parts per million by volume (ppm) of carbon tetrachloride. For wells that average 5-stdft 3 /min air flow rates, passive vapor extraction is more cost effective below 100 ppm

  20. The lithium vapor box divertor

    International Nuclear Information System (INIS)

    Goldston, R J; Schwartz, J; Myers, R

    2016-01-01

    It has long been recognized that volumetric dissipation of the plasma heat flux from a fusion power system is preferable to its localized impingement on a material surface. Volumetric dissipation mitigates both the anticipated very high heat flux and intense particle-induced damage due to sputtering. Recent projections to a tokamak demonstration power plant suggest an immense upstream parallel heat flux, of order 20 GW m −2 , implying that fully detached operation may be a requirement for the success of fusion power. Building on pioneering work on the use of lithium by Nagayama et al and by Ono et al as well as earlier work on the gas box divertor by Watkins and Rebut, we present here a concept for a lithium vapor box divertor, in which lithium vapor extracts momentum and energy from a fusion-power-plant divertor plasma, using fully volumetric processes. At the high powers and pressures that are projected this requires a high density of lithium vapor, which must be isolated from the main plasma in order to avoid lithium build-up on the chamber walls or in the plasma. Isolation is achieved through a powerful multi-box differential pumping scheme available only for condensable vapors. The preliminary box-wise calculations are encouraging, but much more work is required to demonstrate the practical viability of this scheme, taking into account at least 2D plasma and vapor flows within and between the vapor boxes and out of the vapor boxes to the main plasma. (paper)

  1. Recoverying device for sodium vapor in inert gas

    Energy Technology Data Exchange (ETDEWEB)

    Nakagawa, Tamotsu; Nagashima, Ikuo

    1992-11-06

    A multi-pipe type heat exchanger for cooling an inert gas and a mist trap connected to the inert gas exit of the heat exchanger are disposed. A mist filter having bottomed pipes made of an inert gas-permeable sintered metal is disposed in the mist trap, and an inert gas discharge port is disposed at the upper side wall. With such a constitution, a high temperature inert gas containing sodium vapors can be cooled efficiently by the multi-pipe type heat exchanger capable of easy temperature control, thereby converting sodium vapors into mists, and the inert gas containing sodium mists can be flown into the mist trap. Sodium mists are collected by the mist filter and sodium mists flown down are discharged from the discharge port. With such procedures, a great amount of the inert gas containing sodium vapors can be processed continuously. (T.M.).

  2. Effect of degree of subcooling on vapor explosion

    International Nuclear Information System (INIS)

    Xu Zhihong; Yang Yanhua; Li Tianshu

    2010-01-01

    In order to investigate the mechanism of the vapor explosion, an observable experiment equipment for low-temperature molten materials to be dropped into water was designed. In the experiment, molten material jet was injected into water to experimentally obtain the visualized information. This experiment results show that the degree of subcooling restrains the explosion. In order to validate the result by other aspects, the breakup experiment was conducted. Results show that the degree of water subcooling is important to melt breakup. High temperature of water is easy to increase the vapor generation during molten material falling, which decrease the drag and accelerated the molten material falling. At the same time, more vapor appear around the molten metal decrease the heat transfer amount between water and molten materials. The two experimental results coincide. (authors)

  3. Dimers in nucleating vapors

    Science.gov (United States)

    Lushnikov, A. A.; Kulmala, M.

    1998-09-01

    The dimer stage of nucleation may affect considerably the rate of the nucleation process at high supersaturation of the nucleating vapor. Assuming that the dimer formation limits the nucleation rate, the kinetics of the particle formation-growth process is studied starting with the definition of dimers as bound states of two associating molecules. The partition function of dimer states is calculated by summing the Boltzmann factor over all classical bound states, and the equilibrium population of dimers is found for two types of intermolecular forces: the Lennard-Jones (LJ) and rectangular well+hard core (RW) potentials. The principle of detailed balance is used for calculating the evaporation rate of dimers. The kinetics of the particle formation-growth process is then investigated under the assumption that the trimers are stable with respect to evaporation and that the condensation rate is a power function of the particle mass. If the power exponent λ=n/(n+1) (n is a non-negative integer), the kinetics of the process is described by a finite set of moments of particle mass distribution. When the characteristic time of the particle formation by nucleation is much shorter than that of the condensational growth, n+2 universal functions of a nondimensional time define the kinetic process. These functions are calculated for λ=2/3 (gas-to-particle conversion in the free molecular regime) and λ=1/2 (formation of islands on surfaces).

  4. Role of hydrogen in Sb film deposition and characterization of Sb and GexSby films deposited by cyclic plasma enhanced chemical vapor deposition using metal-organic precursors

    International Nuclear Information System (INIS)

    Kim, Hyung Keun; Jung, Jin Hwan; Choi, Doo Jin

    2012-01-01

    To meet increasing demands for chemical vapor deposition methods for high performance phase-change memory, cyclic plasma enhanced chemical vapor deposition of Sb and Ge x Sb y phase-change films and characterization of their properties were performed. Two cycle sequences were designed to investigate the role of hydrogen gas as a reduction gas during Sb film deposition. Hydrogen gas was not introduced into the reaction chamber during the purge step in cycle sequence A and was introduced during the purge step for cycle sequence B. The role of hydrogen gas was investigated by comparing the results obtained from these two cycle sequences and was concluded to exert an effect by a combination of precursor decomposition, surface maintenance as a hydrogen termination agent, and surface etching. These roles of hydrogen gas are discussed through consideration of changes in deposition rates, the oxygen concentration on the surface of the Sb film, and observations of film surface morphology. Based on these results, Ge x Sb y phase-change films were deposited with an adequate flow rate of hydrogen gas. The Ge and Sb composition of the film was controlled with the designed cycle sequences. A strong oxygen affinity for Ge was observed during the X-ray photoelectron spectroscopy analysis of Sb 3d, Sb 4d, and Ge 3d orbitals. Based on the XPS results, the ratios of Ge to Sb were calculated to be Ge 0.32 Sb 0.68 , Ge 0.38 Sb 0.62 , Ge 0.44 Sb 0.56 , Ge 0.51 Sb 0.49 and Ge 0.67 Sb 0.33 for the G1S7, G1S3, G1S2, G1S1, and G2S1 cycles, respectively. Crystal structures of Sb, Ge, and the GeSb metastable phase were observed with various Ge x Sb y film compositions. Sb crystallinity decreased with respect to Ge crystallinity by increasing the Ge fraction. A current–voltage curve was introduced, and an electro-switching phenomenon was clearly generated at a typical voltage, V th . V th values increased in conjunction with an increased proportion of Ge. The Sb crystallinity decrease and V

  5. The use of electrothermal vaporizer coupled to the inductively coupled plasma mass spectrometry for the determination of arsenic, selenium and transition metals in biological samples treated with formic acid

    Energy Technology Data Exchange (ETDEWEB)

    Tormen, Luciano, E-mail: lucianotormen@hotmail.com [Departamento de Quimica, Universidade Federal de Santa Catarina, Depto. Quimica, Campus Trindade, 88040-900 Florianopolis, SC (Brazil); Universidade Federal da Fronteira Sul - UFFS, Campus Laranjeiras do Sul, 85303-775 Laranjeiras do Sul, PR (Brazil); Gil, Raul A. [Instituto de Quimica de San Luis (UNSL-CONICET), Chacabuco y Pedernera, D5700BWQ San Luis (Argentina); Frescura, Vera L.A. [Departamento de Quimica, Universidade Federal de Santa Catarina, Depto. Quimica, Campus Trindade, 88040-900 Florianopolis, SC (Brazil); Martinez, Luis Dante [Instituto de Quimica de San Luis (UNSL-CONICET), Chacabuco y Pedernera, D5700BWQ San Luis (Argentina); Curtius, Adilson J. [Departamento de Quimica, Universidade Federal de Santa Catarina, Depto. Quimica, Campus Trindade, 88040-900 Florianopolis, SC (Brazil)

    2012-03-02

    Highlights: Black-Right-Pointing-Pointer Simple sample treatment of biologic samples with formic acid is proposed. Black-Right-Pointing-Pointer The treatment with formic acid is easy, rapid, less expensive and environmental friendly allowing a high sample throughput. Black-Right-Pointing-Pointer External calibration with aqueous standard allows the simultaneous determination of As, Co, Cu, Fe, Mn, Ni, Se and V. Black-Right-Pointing-Pointer The use of ETV avoids plasma instability, carbon deposit on the cones and does not require sample digestion. - Abstract: A fast method for the determination of As, Co, Cu, Fe, Mn, Ni, Se and V in biological samples by ETV-ICP-MS, after a simple sample treatment with formic acid, is proposed. Approximately 75 mg of each sample is mixed with 5 mL of formic acid, kept at 90 Degree-Sign C for 1 h and then diluted with nitric acid aqueous solution to a 5% (v/v) formic acid and 1% (v/v) nitric acid final concentrations. A palladium solution was used as a chemical modifier. The instrumental conditions, such as carrier gas flow rate, RF power, pyrolysis and vaporization temperatures and argon internal flow rate during vaporization were optimized. The formic acid causes a slight decrease of the analytes signal intensities, but does not increase the signal of the mainly polyatomic ions ({sup 14}N{sup 35}Cl{sup +}, {sup 14}N{sup 12}C{sup +}, {sup 40}Ar{sup 12}C{sup +}, {sup 13}C{sup 37}Cl{sup +}, {sup 40}Ar{sup 36}Ar{sup +}, {sup 40}Ar{sup 35}Cl{sup +}, {sup 35}Cl{sup 16}O{sup +}, {sup 40}Ar{sup 18}O{sup +}) that affect the analytes signals. The effect of charge transfer reactions, that could increase the ionization efficiency of some elements with high ionization potentials was not observed due to the elimination of most of the organic compounds during the pyrolysis step. External calibration with aqueous standard solutions containing 5% (v/v) formic acid allows the simultaneous determination of all analytes with high accuracy. The

  6. Tubing For Sampling Hydrazine Vapor

    Science.gov (United States)

    Travis, Josh; Taffe, Patricia S.; Rose-Pehrsson, Susan L.; Wyatt, Jeffrey R.

    1993-01-01

    Report evaluates flexible tubing used for transporting such hypergolic vapors as those of hydrazines for quantitative analysis. Describes experiments in which variety of tubing materials, chosen for their known compatibility with hydrazine, flexibility, and resistance to heat.

  7. Use of water vapor for suppressing the growth of unstable low-{kappa} interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

    Energy Technology Data Exchange (ETDEWEB)

    Xu, J.P. [Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074 (China); Zou, X. [School of Electromachine and Architecture Engineering, Jianghan University, Wuhan, 430056 (China); Lai, P.T. [Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road (Hong Kong)], E-mail: laip@eee.hku.hk; Li, C.X.; Chan, C.L. [Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road (Hong Kong)

    2009-03-02

    Annealing of high-permittivity HfTiO gate dielectric on Ge substrate in different gases (N{sub 2}, NH{sub 3}, NO and N{sub 2}O) with or without water vapor is investigated. Analysis by transmission electron microscopy indicates that the four wet anneals can greatly suppress the growth of a GeO{sub x} interlayer at the dielectric/Ge interface, and thus decrease interface states, oxide charges and gate leakage current. Moreover, compared with the wet N{sub 2} anneal, the wet NH{sub 3}, NO and N{sub 2}O anneals decrease the equivalent permittivity of the gate dielectric due to the growth of a GeO{sub x}N{sub y} interlayer. Among the eight anneals, the wet N{sub 2} anneal produces the best dielectric performance with an equivalent relative permittivity of 35, capacitance equivalent thickness of 0.81 nm, interface-state density of 6.4 x 10{sup 11} eV{sup -1} cm{sup -2} and gate leakage current of 2.7 x 10{sup -4} A/cm{sup 2} at V{sub g} = 1 V.

  8. Characteristic of doping and diffusion of heavily doped n and p type InP and InGaAs epitaxial layers grown by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Pinzone, C.J.; Dupuis, R.D.; Ha, N.T.; Luftman, H.S.; Gerrard, N.D.

    1990-01-01

    Electronic and photonic device applications of the InGaAs/InP materials system often require the growth of epitaxial material doped to or near the solubility limit of the impurity in the host material. These requirements present an extreme challenge for the crystal grower. To produce devices with abrupt dopant profiles, preserve the junction during subsequent growth, and retain a high degree of crystalline perfection, it is necessary to understand the limits of dopant incorporation and the behavior of the impurity in the material. In this study, N-type doping above 10 19 cm -3 has been achieved in InP and InGaAs using Sn as a dopant. P-type Zn doping at these levels has also been achieved in these materials but p type activation above ∼3 x 10 18 cm -3 in InP has not been seen. All materials were grown by the metalorganic chemical vapor deposition (MOCVD) crystal growth technique. Effective diffusion coefficients have been measured for Zn and Sn in both materials from analysis of secondary ion mass spectra (SIMS) of specially grown and annealed samples

  9. Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

    International Nuclear Information System (INIS)

    Xu, J.P.; Zou, X.; Lai, P.T.; Li, C.X.; Chan, C.L.

    2009-01-01

    Annealing of high-permittivity HfTiO gate dielectric on Ge substrate in different gases (N 2 , NH 3 , NO and N 2 O) with or without water vapor is investigated. Analysis by transmission electron microscopy indicates that the four wet anneals can greatly suppress the growth of a GeO x interlayer at the dielectric/Ge interface, and thus decrease interface states, oxide charges and gate leakage current. Moreover, compared with the wet N 2 anneal, the wet NH 3 , NO and N 2 O anneals decrease the equivalent permittivity of the gate dielectric due to the growth of a GeO x N y interlayer. Among the eight anneals, the wet N 2 anneal produces the best dielectric performance with an equivalent relative permittivity of 35, capacitance equivalent thickness of 0.81 nm, interface-state density of 6.4 x 10 11 eV -1 cm -2 and gate leakage current of 2.7 x 10 -4 A/cm 2 at V g = 1 V

  10. An analysis of the growth of silver catalyzed In{sub x}Ga{sub 1−x}As nanowires on Si (100) by metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, K.; Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in [Materials Science Centre, Indian Institute of Technology, Kharagpur 721302 (India); Palit, M.; Chattopadhyay, S. [Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Kolkata 700098 (India)

    2016-08-28

    A model is proposed here to understand the nucleation of III–V semiconductor nanowires (NW). Whereas the classical nucleation theory is not adequately sufficient in explaining the evolution of the shape of the NWs under different chemical environment such as flow rate or partial pressure of the precursors, the effect of adsorption and desorption mediated growth, and diffusion limited growth are taken into account to explain the morphology and the crystal structure of In{sub x}Ga{sub 1−x}As nanowires (NW) on Silicon (100) substrates grown by a metalorganic chemical vapor deposition technique. It is found that the monolayer nucleus that originates at the triple phase line covers the entire nucleus-substrate (NS) region at a specific level of supersaturation and there are cases when the monolayer covers a certain fraction of the NS interface. When the monolayer covers the total NS interface, NWs grow with perfect cylindrical morphology and whenever a fraction of the interface is covered by the nucleus, the NWs become curved as observed from high resolution transmission electron microscopy images. The supersaturation, i.e., the chemical potential is found to be governed by the concentration of precursors into the molten silver which in the present case is taken as a catalyst. Our study provides new insights into the growth of ternary NWs which will be helpful in understanding the behavior of growth of different semiconducting NWs.

  11. Characterization of TiO{sub 2} thin films obtained by metal-organic chemical vapour deposition; Caracterizacao de filmes finos de TiO{sub 2} obtidos por deposicao quimica em fase vapor

    Energy Technology Data Exchange (ETDEWEB)

    Carriel, Rodrigo Crociati

    2015-07-01

    Titanium dioxide (TiO{sub 2}) thin films were grown on silicon substrate (100) by MOCVD process (chemical deposition of organometallic vapor phase). The films were grown at 400, 500, 600 and 700 ° C in a conventional horizontal equipment. Titanium tetraisopropoxide was used as source of both oxygen and titanium. Nitrogen was used as carrier and purge gas. X-ray diffraction technique was used for the characterization of the crystalline structure. Scanning electron microscopy with field emission gun was used to evaluate the morphology and thickness of the films. The films grown at 400 and 500°C presented anatase phase. The film grown at 600ºC presented rutile besides anatase phase, while the film grown at 700°C showed, in addition to anatase and rutile, brookite phase. In order to evaluate the electrochemical behavior of the films cyclic voltammetry technique was used. The tests revealed that the TiO2 films formed exclusively by the anatase phase exhibit strong capacitive character. The anodic current peak is directly proportional to the square root of the scanning rate for films grown at 500ºC, suggesting that linear diffusion is the predominant mechanism of cations transport. It was observed that in the film grown during 60 minutes the Na+ ions intercalation and deintercalation easily. The films grown in the other conditions did not present the anodic current peak, although charge was accumulated in the film. (author)

  12. Liquid metals. Coexistence line, critical parameters, compressibility

    International Nuclear Information System (INIS)

    Filippov, L.P.

    1986-01-01

    Formulae to calculate four characteristic parameters of liquid metals (density, compressibility, critical temperature and individual parameter) according to four initial data are obtained: two values of vapor density and two values of vapor pressure. Comparison between experimental and calculation results are presented for liquid Cs, Na, Li, K, Rb

  13. Properties of tribology for Si implanted PET

    International Nuclear Information System (INIS)

    Wu Yuguang; Zhang Tonghe; Zhang Xu; Liu Andong; Xie Mengxia; Zhang Aimin; Chen Jianmin

    2002-01-01

    Polyethylene terephthalate (PET) has been modified with Si ions from a metal vapor arc source (MEVVA). After implantation, the surface structure has been greatly changed. The experimental results of infrared absorption indicated that the particles are referred to rich carbon and SiC particles. The PET has been strengthened by these dispersed particles. The measurement results using nanometer hardness tester reveal that both surface hardness and modulus increase obviously. Therefore the surface wear resistance improved extremely. Finally the modification mechanism of Si implanted PET was discussed

  14. Mass spectrometric study of vaporization of (U,Pu)O2 fuel simulating high burnup

    International Nuclear Information System (INIS)

    Maeda, Atsushi; Ohmichi, Toshihiko; Fukushima, Susumu; Handa, Muneo

    1985-08-01

    The vaporization behavior of (U,Pu)O 2 fuel simulatig high burnup was studied in the temperature range of 1,573 -- 2,173 K by high temperature mass spectrometry. The phases in the simulated fuel were examined by X-ray microprobe analysis. The relationship between chemical form and vaporization behavior of simulated fission product elements was discussed. Pd, Sr, Ba, Ce and actinide-bearing vapor species were observed, and it was clarified that Pd vapor originated from metallic inclusion and Sr and Ce vapors, from mixed oxide fuel matrix. The vaporization behavior of the actinide elements was somewhat similar to that of hypostoichiometric mixed oxide fuel. The behavior of Ba-bearing vapor species changed markedly over about 2,000 K. From the determination of BaO vapor pressures over simulated fuel and BaZrO 3 , it was revealed thermodynamically that the transformation of the chemical form of Ba about 2,000 K, i.e., dissolution of BaZrO 3 phase into fuel matrix, might be the reason of the observed vapor pressure change. (author)

  15. Ni/CeO{sub 2}-Al{sub 2}O{sub 3} catalysts promoted with noble metals for the hydrogen production by ethanol vapor reforming; Catalisadores de Ni/CeO{sub 2}-Al{sub 2}O{sub 3} promovidos com metais nobres para a producao de hidrogenio por reforma a vapor de etanol

    Energy Technology Data Exchange (ETDEWEB)

    Profeti, Luciene P.R.; Ticianelli, Edson Antonio; Assaf, Elisabete Moreira [Universidade de Sao Paulo (IQSC/USP), Sao Carlos, SP (Brazil). Inst. de Quimica]. E-mail: eassaf@iqsc.usp.br

    2008-07-01

    The catalytic activity of Ni/CeO{sub 2}-Al{sub 2}O{sub 3} catalysts modified with noble metals (Ru, Ir, Pt and Pd) was investigated in the steam reforming of ethanol. The catalysts were characterized by energy dispersive spectroscopy, X-ray diffraction, UV-Vis diffuse reflectance spectroscopy and H{sub 2} temperature-programmed reduction-X-ray absorption fine structure (XANES). The results showed that the formation of inactive nickel aluminate was avoided due to the presence of a CeO{sub 2} dispersed on the alumina. The promoting effect of noble metals included a decrease of the reduction temperatures of NiO species interacting with the support due to the hydrogen spillover effect, leading to an increase of the reducibilities of the promoted catalysts The better catalytic performance for the ethanol steam reforming was obtained for the NiPd/CeAl catalyst, which presented an effluent gaseous mixture with the highest H{sub 2} yield. (author)

  16. Melting temperature, vapor density, and vapor pressure of molybdenum pentafluoride

    Energy Technology Data Exchange (ETDEWEB)

    Krause, Jr, R F; Douglas, T B [National Bureau of Standards, Washington, D.C. (USA). Inst. for Materials Research

    1977-12-01

    A sample of MoF/sub 5/ was prepared by reaction of MoF/sub 6/(g) and Mo(c). Melting curves of temperature against time established the melting temperature at zero impurity to be 318.85 K, the enthalpy of fusion to be 6.1 kJ mol/sup -1/ (+ - 5 per cent), and the cryoscopic impurity of the sample to be 0.15 mole per cent. In the presence of MoF/sub 6/(g) which was added to suppress disproportionation, the vapor density of MoF/sub 5/ over the liquid was measured by the transpiration method at 343, 363, and 383 K, the total MoF/sub 5/ that evaporated being determined by permanganate titration. The total vapor pressure of MoF/sub 5/ oligomers over the liquid was measured by a simple static method at 373 and 392 K, while melting temperatures were taken alternately to monitor possible contamination of the sample. Although the vapor pressures were adjusted for disproportionation, solution of MoF/sub 6/ in MoF/sub 5/ (1), and wall adsorption of MoF/sub 6/ their percentage uncertainty is probably several times that of the vapor densities. A combination of the two properties indicates the average extent of association of the saturated vapor to be near 2, which is the value for the dimer species (MoF/sub 5/)/sub 2/.

  17. PROCESS FOR PREPARING URANIUM METAL

    Science.gov (United States)

    Prescott, C.H. Jr.; Reynolds, F.L.

    1959-01-13

    A process is presented for producing oxygen-free uranium metal comprising contacting iodine vapor with crude uranium in a reaction zone maintained at 400 to 800 C to produce a vaporous mixture of UI/sub 4/ and iodine. Also disposed within the maction zone is a tungsten filament which is heated to about 1600 C. The UI/sub 4/, upon contacting the hot filament, is decomposed to molten uranium substantially free of oxygen.

  18. Chemical vapor deposited fiber coatings and chemical vapor infiltrated ceramic matrix composites

    Energy Technology Data Exchange (ETDEWEB)

    Kmetz, M.A.

    1992-01-01

    Conventional Chemical Vapor Deposition (CVD) and Organometallic Chemical Vapor Deposition (MOCVD) were employed to deposit a series of interfacial coatings on SiC and carbon yarn. Molybdenum, tungsten and chromium hexacarbonyls were utilized as precursors in a low temperature (350[degrees]C) MOCVD process to coat SiC yarn with Mo, W and Cr oxycarbides. Annealing studies performed on the MoOC and WOC coated SiC yarns in N[sub 2] to 1,000[degrees]C establish that further decomposition of the oxycarbides occurred, culminating in the formation of the metals. These metals were then found to react with Si to form Mo and W disilicide coatings. In the Cr system, heating in N[sub 2] above 800[degrees]C resulted in the formation of a mixture of carbides and oxides. Convention CVD was also employed to coat SiC and carbon yarn with C, Bn and a new interface designated BC (a carbon-boron alloy). The coated tows were then infiltrated with SiC, TiO[sub 2], SiO[sub 2] and B[sub 4]C by a chemical vapor infiltration process. The B-C coatings were found to provide advantageous interfacial properties over carbon and BN coatings in several different composite systems. The effectiveness of these different coatings to act as a chemically inert barrier layer and their relationship to the degree of interfacial debonding on the mechanical properties of the composites were examined. The effects of thermal stability and strength of the coated fibers and composites were also determined for several difference atmospheres. In addition, a new method for determining the tensile strength of the as-received and coated yarns was also developed. The coated fibers and composites were further characterized by AES, SEM, XPS, IR and X-ray diffraction analysis.

  19. The influence of water vapor and sulfur dioxide on the catalytic decomposition of nitrous oxide

    Energy Technology Data Exchange (ETDEWEB)

    Yalamas, C.; Heinisch, R.; Barz, M. [Technische Univ. Berlin (Germany). Inst. fuer Energietechnik; Cournil, M. [Ecole Nationale Superieure des Mines, 42 - Saint-Etienne (France)

    2001-03-01

    For the nitrous oxide decomposition three groups of catalysts such as metals on support, hydrotalcites, and perovskites were studied relating to their activity in the presence of vapor or sulfur dioxide, in the temperature range from 200 to 500 C. It was found that the water vapor strongly inhibates the nitrous oxide decomposition at T=200-400 C. The sulfur dioxide poisons the catalysts, in particular the perovskites. (orig.)

  20. Evidence for extreme partitioning of copper into a magmatic vapor phase

    International Nuclear Information System (INIS)

    Lowenstern, J.B.; Mahood, G.A.; Rivers, M.L.; Sutton, S.R.

    1991-01-01

    The discovery of copper sulfides in carbon dioxide- and chlorine-bearing bubbles in phenocryst-hosted melt inclusions shows that copper resides in a vapor phase in some shallow magma chambers. Copper is several hundred times more concentrated in magmatic vapor than in coexisting pantellerite melt. The volatile behavior of copper should be considered when modeling the volcanogenic contribution of metals to the atmosphere and may be important in the formation of copper porphyry ore deposits

  1. Metallic and/or oxygen ion implantation into AlN ceramics as a method of preparation for its direct bonding with copper

    International Nuclear Information System (INIS)

    Barlak, M.; Borkowska, K.; Olesinska, W.; Kalinski, D.; Piekoszewski, J.; Werner, Z.; Jagielski, J.; Sartowska, B.

    2006-01-01

    Direct bonding (DB) process is recently getting an increasing interest as a method for producing high quality joints between aluminum nitride (AlN) ceramics and copper. The metallic ions were implanted using an MEVVA type TITAN implanter with unseparated beam. Oxygen ions were implanted using a semi-industrial ion implanter without mass separation equipped with a gaseous ion source. The substrate temperature did not exceed 200 o C. Ions were implanted at two acceleration voltages, i.e. 15 and 70 kV. The fluence range was between 1·E16 and 1·E18 cm -2 . After implantation, some of the samples were characterized by the Rutherford backscattering (RBS) method. In conclusion: (a) The investigations performed in the present work confirm an assumption that ion implantation is a very promising technique as a pretreatment of AlN ceramics for the formation of the joints with copper in direct bonding process. (b) It has been shown that titanium implantation gives the best results in comparison to other metals examined (Fe, Cr, Cu) but also in comparison to double Ti+O and O+Ti implantations

  2. Thermal plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Heberlein, J.; Pfender, E.

    1993-01-01

    Thermal plasmas, with temperatures up to and even exceeding 10 4 K, are capable of producing high density vapor phase precursors for the deposition of relatively thick films. Although this technology is still in its infancy, it will fill the void between the relatively slow deposition processes such as physical vapor deposition and the high rate thermal spray deposition processes. In this chapter, the present state-of-the-art of this field is reviewed with emphasis on the various types of reactors proposed for this emerging technology. Only applications which attracted particular attention, namely diamond and high T c superconducting film deposition, are discussed in greater detail. (orig.)

  3. Microstructure of vapor deposited coatings on curved substrates

    Energy Technology Data Exchange (ETDEWEB)

    Rodgers, Theron M.; Zhao, Hengbei; Wadley, Haydn N. G., E-mail: haydn@virginia.edu [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., P.O. Box 400745, Charlottesville, Virginia 22904 (United States)

    2015-09-15

    Thermal barrier coating systems consisting of a metallic bond coat and ceramic over layer are widely used to extend the life of gas turbine engine components. They are applied using either high-vacuum physical vapor deposition techniques in which vapor atoms rarely experience scattering collisions during propagation to a substrate, or by gas jet assisted (low-vacuum) vapor deposition techniques that utilize scattering from streamlines to enable non-line-of-sight deposition. Both approaches require substrate motion to coat a substrate of complex shape. Here, direct simulation Monte Carlo and kinetic Monte Carlo simulation methods are combined to simulate the deposition of a nickel coating over the concave and convex surfaces of a model airfoil, and the simulation results are compared with those from experimental depositions. The simulation method successfully predicted variations in coating thickness, columnar growth angle, and porosity during both stationary and substrate rotated deposition. It was then used to investigate a wide range of vapor deposition conditions spanning high-vacuum physical vapor deposition to low-vacuum gas jet assisted vapor deposition. The average coating thickness was found to increase initially with gas pressure reaching a maximum at a chamber pressure of 8–10 Pa, but the best coating thickness uniformity was achieved under high vacuum deposition conditions. However, high vacuum conditions increased the variation in the coatings pore volume fraction over the surface of the airfoil. The simulation approach was combined with an optimization algorithm and used to investigate novel deposition concepts to tailor the local coating thickness.

  4. Microstructure of vapor deposited coatings on curved substrates

    International Nuclear Information System (INIS)

    Rodgers, Theron M.; Zhao, Hengbei; Wadley, Haydn N. G.

    2015-01-01

    Thermal barrier coating systems consisting of a metallic bond coat and ceramic over layer are widely used to extend the life of gas turbine engine components. They are applied using either high-vacuum physical vapor deposition techniques in which vapor atoms rarely experience scattering collisions during propagation to a substrate, or by gas jet assisted (low-vacuum) vapor deposition techniques that utilize scattering from streamlines to enable non-line-of-sight deposition. Both approaches require substrate motion to coat a substrate of complex shape. Here, direct simulation Monte Carlo and kinetic Monte Carlo simulation methods are combined to simulate the deposition of a nickel coating over the concave and convex surfaces of a model airfoil, and the simulation results are compared with those from experimental depositions. The simulation method successfully predicted variations in coating thickness, columnar growth angle, and porosity during both stationary and substrate rotated deposition. It was then used to investigate a wide range of vapor deposition conditions spanning high-vacuum physical vapor deposition to low-vacuum gas jet assisted vapor deposition. The average coating thickness was found to increase initially with gas pressure reaching a maximum at a chamber pressure of 8–10 Pa, but the best coating thickness uniformity was achieved under high vacuum deposition conditions. However, high vacuum conditions increased the variation in the coatings pore volume fraction over the surface of the airfoil. The simulation approach was combined with an optimization algorithm and used to investigate novel deposition concepts to tailor the local coating thickness

  5. Waste Tank Vapor Project: Tank vapor database development

    International Nuclear Information System (INIS)

    Seesing, P.R.; Birn, M.B.; Manke, K.L.

    1994-09-01

    The objective of the Tank Vapor Database (TVD) Development task in FY 1994 was to create a database to store, retrieve, and analyze data collected from the vapor phase of Hanford waste tanks. The data needed to be accessible over the Hanford Local Area Network to users at both Westinghouse Hanford Company (WHC) and Pacific Northwest Laboratory (PNL). The data were restricted to results published in cleared reports from the laboratories analyzing vapor samples. Emphasis was placed on ease of access and flexibility of data formatting and reporting mechanisms. Because of time and budget constraints, a Rapid Application Development strategy was adopted by the database development team. An extensive data modeling exercise was conducted to determine the scope of information contained in the database. a A SUN Sparcstation 1000 was procured as the database file server. A multi-user relational database management system, Sybase reg-sign, was chosen to provide the basic data storage and retrieval capabilities. Two packages were chosen for the user interface to the database: DataPrism reg-sign and Business Objects trademark. A prototype database was constructed to provide the Waste Tank Vapor Project's Toxicology task with summarized and detailed information presented at Vapor Conference 4 by WHC, PNL, Oak Ridge National Laboratory, and Oregon Graduate Institute. The prototype was used to develop a list of reported compounds, and the range of values for compounds reported by the analytical laboratories using different sample containers and analysis methodologies. The prototype allowed a panel of toxicology experts to identify carcinogens and compounds whose concentrations were within the reach of regulatory limits. The database and user documentation was made available for general access in September 1994

  6. Estimated vapor pressure for WTP process streams

    Energy Technology Data Exchange (ETDEWEB)

    Pike, J. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Poirier, M. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

    2015-01-01

    Design assumptions during the vacuum refill phase of the Pulsed Jet Mixers (PJMs) in the Hanford Waste Treatment and Immobilization Plant (WTP) equate the vapor pressure of all process streams to that of water when calculating the temperature at which the vacuum refill is reduced or eliminated. WTP design authority asked the authors to assess this assumption by performing calculations on proposed feed slurries to calculate the vapor pressure as a function of temperature. The vapor pressure was estimated for each WTP waste group. The vapor pressure suppression caused by dissolved solids is much greater than the increase caused by organic components such that the vapor pressure for all of the waste group compositions is less than that of pure water. The vapor pressure for each group at 145°F ranges from 81% to 98% of the vapor pressure of water. If desired, the PJM could be operated at higher temperatures for waste groups with high dissolved solids that suppress vapor pressure. The SO4 group with the highest vapor pressure suppression could be operated up to 153°F before reaching the same vapor pressure of water at 145°F. However, most groups would reach equivalent vapor pressure at 147 to 148°F. If any of these waste streams are diluted, the vapor pressure can exceed the vapor pressure of water at mass dilution ratios greater than 10, but the overall effect is less than 0.5%.

  7. Vapor generation methods for explosives detection research

    Energy Technology Data Exchange (ETDEWEB)

    Grate, Jay W.; Ewing, Robert G.; Atkinson, David A.

    2012-12-01

    The generation of calibrated vapor samples of explosives compounds remains a challenge due to the low vapor pressures of the explosives, adsorption of explosives on container and tubing walls, and the requirement to manage (typically) multiple temperature zones as the vapor is generated, diluted, and delivered. Methods that have been described to generate vapors can be classified as continuous or pulsed flow vapor generators. Vapor sources for continuous flow generators are typically explosives compounds supported on a solid support, or compounds contained in a permeation or diffusion device. Sources are held at elevated isothermal temperatures. Similar sources can be used for pulsed vapor generators; however, pulsed systems may also use injection of solutions onto heated surfaces with generation of both solvent and explosives vapors, transient peaks from a gas chromatograph, or vapors generated by s programmed thermal desorption. This article reviews vapor generator approaches with emphasis on the method of generating the vapors and on practical aspects of vapor dilution and handling. In addition, a gas chromatographic system with two ovens that is configurable with up to four heating ropes is proposed that could serve as a single integrated platform for explosives vapor generation and device testing. Issues related to standards, calibration, and safety are also discussed.

  8. Vapor generating unit blowdown arrangement

    International Nuclear Information System (INIS)

    McDonald, B.N.

    1978-01-01

    A vapor generating unit having a U-shaped tube bundle is provided with an orificed downcomer shroud and a fluid flow distribution plate between the lower hot and cold leg regions to promote fluid entrained sediment deposition in proximity to an apertured blowdown pipe

  9. Low temperature synthesis of Zn nanowires by physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Schroeder, Philipp; Kast, Michael; Brueckl, Hubert [Austrian Research Centers GmbH ARC, Nano- Systemtechnologies, Donau-City-Strasse 1, A-1220 Wien (Austria)

    2007-07-01

    We demonstrate catalytic growth of zinc nanowires by physical vapor deposition at modest temperatures of 125-175 C on various substrates. In contrast to conventional approaches using tube furnaces our home-built growth system allows to control the vapor sources and the substrate temperature separately. The silicon substrates were sputter coated with a thin gold layer as metal catalyst. The samples were heated to the growth temperature and subsequently exposed to the zinc vapor at high vacuum conditions. The work pressure was adjusted by the partial pressure of oxygen or argon flow gas. Scanning electron microscopy and atomic force microscopy characterizations revealed that the nanowires exhibit straight, uniform morphology and have diameters in the range of 50-350 nm and lengths up to 70 {mu}m. The Zn nanowires grow independently of the substrates crystal orientation via a catalytic vapor-solid growth mechanism. Since no nanowire formation was observed without gold coating, we expect that the onedimensional growth is initiated by a surface reactive Au seed. ZnO nanowires can be produced in the same preparation chamber by oxidation at 500 C in 1atm (80% Ar, 20% O{sub 2}) for 1 hour. ZnO is highly attractive for sensor applications.

  10. Alkali metal for ultraviolet band-pass filter

    Science.gov (United States)

    Mardesich, Nick (Inventor); Fraschetti, George A. (Inventor); Mccann, Timothy A. (Inventor); Mayall, Sherwood D. (Inventor); Dunn, Donald E. (Inventor); Trauger, John T. (Inventor)

    1993-01-01

    An alkali metal filter having a layer of metallic bismuth deposited onto the alkali metal is provided. The metallic bismuth acts to stabilize the surface of the alkali metal to prevent substantial surface migration from occurring on the alkali metal, which may degrade optical characteristics of the filter. To this end, a layer of metallic bismuth is deposited by vapor deposition over the alkali metal to a depth of approximately 5 to 10 A. A complete alkali metal filter is described along with a method for fabricating the alkali metal filter.

  11. Container for liquid metal

    International Nuclear Information System (INIS)

    Abe, Yoshihito; Imazu, Takayuki; Ueda, Sabuo; Ueya, Katsumi.

    1980-01-01

    Purpose: To arrange a vapor trapping member of a specific structure at the inlet part of a cylindrical gap formed by the inner peripheral surface of the circular opening of a container and the outer peripheral surface of a rotary plug thereby to prevent ingress of vapor in the upper part of the cylindrical gap for a long period of time. Constitution: A sealing material receiving tray is fitted to the container side of the inlet part of a cylindrical gap, and a partition plate is fitted to the rotary plug side. The tray is filled with a sealing material consisting of a large number of steel balls, mesh wire gages and the like, and the partition plate is placed in the tray thereby to carry out sealing of the container. Liquid metal vapor evaporating from the liquid level of the liquid metal adheres to the sealing material to fill the gap, and therefore ingress of vapor to the upper part of the cylindrical gap is prevented, and there is no possibility of causing seal cutting due to the use for a long period. (Sekiya, K.)

  12. Imparting passivity to vapor deposited magnesium alloys

    Science.gov (United States)

    Wolfe, Ryan C.

    Magnesium has the lowest density of all structural metals. Utilization of low density materials is advantageous from a design standpoint, because lower weight translates into improved performance of engineered products (i.e., notebook computers are more portable, vehicles achieve better gas mileage, and aircraft can carry more payload). Despite their low density and high strength to weight ratio, however, the widespread implementation of magnesium alloys is currently hindered by their relatively poor corrosion resistance. The objective of this research dissertation is to develop a scientific basis for the creation of a corrosion resistant magnesium alloy. The corrosion resistance of magnesium alloys is affected by several interrelated factors. Among these are alloying, microstructure, impurities, galvanic corrosion effects, and service conditions, among others. Alloying and modification of the microstructure are primary approaches to controlling corrosion. Furthermore, nonequilibrium alloying of magnesium via physical vapor deposition allows for the formation of single-phase magnesium alloys with supersaturated concentrations of passivity-enhancing elements. The microstructure and surface morphology is also modifiable during physical vapor deposition through the variation of evaporation power, pressure, temperature, ion bombardment, and the source-to-substrate distance. Aluminum, titanium, yttrium, and zirconium were initially chosen as candidates likely to impart passivity on vapor deposited magnesium alloys. Prior to this research, alloys of this type have never before been produced, much less studied. All of these metals were observed to afford some degree of corrosion resistance to magnesium. Due to the especially promising results from nonequilibrium alloying of magnesium with yttrium and titanium, the ternary magnesium-yttrium-titanium system was investigated in depth. While all of the alloys are lustrous, surface morphology is observed under the scanning

  13. Hanford soil partitioning and vapor extraction study

    International Nuclear Information System (INIS)

    Yonge, D.; Hossain, A.; Cameron, R.; Ford, H.; Storey, C.

    1996-07-01

    This report describes the testing and results of laboratory experiments conducted to assist the carbon tetrachloride soil vapor extraction project operating in the 200 West Area of the Hanford Site in Richland, Washington. Vapor-phase adsorption and desorption testing was performed using carbon tetrachloride and Hanford Site soils to estimate vapor-soil partitioning and reasonably achievable carbon tetrachloride soil concentrations during active vapor extractions efforts at the 200 West Area. (CCl 4 is used in Pu recovery from aqueous streams.)

  14. Vapor Pressure Data Analysis and Statistics

    Science.gov (United States)

    2016-12-01

    near 8, 2000, and 200, respectively. The A (or a) value is directly related to vapor pressure and will be greater for high vapor pressure materials...1, (10) where n is the number of data points, Yi is the natural logarithm of the i th experimental vapor pressure value, and Xi is the...VAPOR PRESSURE DATA ANALYSIS AND STATISTICS ECBC-TR-1422 Ann Brozena RESEARCH AND TECHNOLOGY DIRECTORATE

  15. Acoustic imaging of vapor bubbles through optically non-transparent media

    International Nuclear Information System (INIS)

    Kolbe, W.F.; Turko, B.T.; Leskovar, B.

    1983-10-01

    A preliminary investigation of the feasibility of acoustic imaging of vapor bubbles through optically nontransparent media is described. Measurements are reported showing the echo signals produced by air filled glass spheres of various sizes positioned in an aqueous medium as well as signals produced by actual vapor bubbles within a water filled steel pipe. In addition, the influence of the metallic wall thickness and material on the amplitude of the echo signals is investigated. Finally several examples are given of the imaging of spherical bubbles within metallic pipes using a simulated array of acoustic transducers mounted circumferentially around the pipe. The measurement procedures and a description of the measuring system are also given

  16. Estimating enthalpy of vaporization from vapor pressure using Trouton's rule.

    Science.gov (United States)

    MacLeod, Matthew; Scheringer, Martin; Hungerbühler, Konrad

    2007-04-15

    The enthalpy of vaporization of liquids and subcooled liquids at 298 K (delta H(VAP)) is an important parameter in environmental fate assessments that consider spatial and temporal variability in environmental conditions. It has been shown that delta H(VAP)P for non-hydrogen-bonding substances can be estimated from vapor pressure at 298 K (P(L)) using an empirically derived linear relationship. Here, we demonstrate that the relationship between delta H(VAP)and PL is consistent with Trouton's rule and the ClausiusClapeyron equation under the assumption that delta H(VAP) is linearly dependent on temperature between 298 K and the boiling point temperature. Our interpretation based on Trouton's rule substantiates the empirical relationship between delta H(VAP) degree and P(L) degrees for non-hydrogen-bonding chemicals with subcooled liquid vapor pressures ranging over 15 orders of magnitude. We apply the relationship between delta H(VAP) degrees and P(L) degrees to evaluate data reported in literature reviews for several important classes of semivolatile environmental contaminants, including polycyclic aromatic hydrocarbons, chlorobenzenes, polychlorinated biphenyls and polychlorinated dibenzo-dioxins and -furans and illustrate the temperature dependence of results from a multimedia model presented as a partitioning map. The uncertainty associated with estimating delta H(VAP)degrees from P(L) degrees using this relationship is acceptable for most environmental fate modeling of non-hydrogen-bonding semivolatile organic chemicals.

  17. Liquid-liquid contact in vapor explosion. [LMFBR

    Energy Technology Data Exchange (ETDEWEB)

    Segev, A.

    1978-08-01

    The contact of two liquid materials, one of which is at a temperature substantially above the boiling point of the other, can lead to fast energy conversion and a subsequent shock wave. This phenomenon is called a vapor explosion. One method of producing intimate, liquid-liquid contact (which is known to be a necessary condition for vapor explosion) is a shock tube configuration. Such experiments in which water was impacted upon molten aluminum showed that very high pressures, even larger than the thermodynamic critical pressure, could occur. The mechanism by which such sharp pressure pulses are generated is not yet clear. The report describes experiments in which cold liquids (Freon-11, Freon-22, water, or butanol) were impacted upon various hot materials (mineral oil, silicone oil, water, mercury, molten Wood's metal or molten salt mixture).

  18. Prospects for trivalent rare earth molecular vapor lasers for fusion

    International Nuclear Information System (INIS)

    Krupke, W.F.

    1976-01-01

    The dynamical properties of three types of RE 3+ molecular vapors were considered: (1) rare earth trihalogens, (2) rare earth trihalogens complexed with transition metal trihalogens, and (3) rare earth chelates. Radiative and nonradiative (unimolecular and bimolecular) transition probabilities have been calculated using phenomenological models predicted on the unique electronic structure of the triply ionized RE ion (well shielded ground electronic configuration of equivalent of electrons). Although all the lanthanide ions have been treated in some detail, specific results are presented for the Nd 3+ and Tb 3+ ions to illustrate the systematics of these vapors as a class of new laser media. Once verified, these phenomenological models will provide a powerful tool for the directed experimental exploration of these systems. Because of the structural similarity to the triply ionized actinides, comments offered here for the lanthanide rare earth series generally apply to gaseous actinide lasers which are also under consideration

  19. What Good is Raman Water Vapor Lidar?

    Science.gov (United States)

    Whitman, David

    2011-01-01

    Raman lidar has been used to quantify water vapor in the atmosphere for various scientific studies including mesoscale meteorology and satellite validation. Now the international networks of NDACC and GRUAN have interest in using Raman water vapor lidar for detecting trends in atmospheric water vapor concentrations. What are the data needs for addressing these very different measurement challenges. We will review briefly the scientific needs for water vapor accuracy for each of these three applications and attempt to translate that into performance specifications for Raman lidar in an effort to address the question in the title of "What good is Raman water vapor Iidar."

  20. High temperature vapors science and technology

    CERN Document Server

    Hastie, John

    2012-01-01

    High Temperature Vapors: Science and Technology focuses on the relationship of the basic science of high-temperature vapors to some areas of discernible practical importance in modern science and technology. The major high-temperature problem areas selected for discussion include chemical vapor transport and deposition; the vapor phase aspects of corrosion, combustion, and energy systems; and extraterrestrial high-temperature species. This book is comprised of seven chapters and begins with an introduction to the nature of the high-temperature vapor state, the scope and literature of high-temp

  1. Importance Profiles for Water Vapor

    Science.gov (United States)

    Mapes, Brian; Chandra, Arunchandra S.; Kuang, Zhiming; Zuidema, Paquita

    2017-11-01

    Motivated by the scientific desire to align observations with quantities of physical interest, we survey how scalar importance functions depend on vertically resolved water vapor. Definitions of importance begin from familiar examples of water mass I m and TOA clear-sky outgoing longwave flux I OLR, in order to establish notation and illustrate graphically how the sensitivity profile or "kernel" depends on whether specific humidity S, relative humidity R, or ln( R) are used as measures of vapor. Then, new results on the sensitivity of convective activity I con to vapor (with implied knock-on effects such as weather prediction skill) are presented. In radiative-convective equilibrium, organized (line-like) convection is much more sensitive to moisture than scattered isotropic convection, but it exists in a drier mean state. The lesson for natural convection may be that organized convection is less susceptible to dryness and can survive and propagate into regions unfavorable for disorganized convection. This counterintuitive interpretive conclusion, with respect to the narrow numerical result behind it, highlights the importance of clarity about what is held constant at what values in sensitivity or susceptibility kernels. Finally, the sensitivities of observable radiance signals I sig for passive remote sensing are considered. While the accuracy of R in the lower free troposphere is crucial for the physical importance scalars, this layer is unfortunately the most difficult to isolate with passive remote sensing: In high emissivity channels, water vapor signals come from too high in the atmosphere (for satellites) or too low (for surface radiometers), while low emissivity channels have poor altitude discrimination and (in the case of satellites) are contaminated by surface emissions. For these reasons, active ranging (LiDAR) is the preferred observing strategy.

  2. Vapor Pressure of Antimony Triiodide

    Science.gov (United States)

    2017-12-07

    unlimited. iii Contents List of Figures iv 1. Introduction 1 2. Vapor Pressure 1 3. Experiment 3 4. Discussion and Measurements 5 5...SbI3 as a function of temperature ......................... 6 Approved for public release; distribution is unlimited. 1 1. Introduction ...single-crystal thin films of n-type (Bi,Sb)2(Te,Se)3 materials presents new doping challenges because it is a nonequilibrium process. (Bi,Sb)2(Te,Se)3

  3. Sodium vapor charge exchange cell

    International Nuclear Information System (INIS)

    Hiddleston, H.R.; Fasolo, J.A.; Minette, D.C.; Chrien, R.E.; Frederick, J.A.

    1976-01-01

    An operational sequential charge-exchange ion source yielding a 50 MeV H - current of approximately 8 mA is planned for use with the Argonne 500 MeV booster synchrotron. We report on the progress for development of a sodium vapor charge-exchange cell as part of that planned effort. Design, fabrication, and operating results to date are presented and discussed. (author)

  4. Metallic coating of microspheres

    International Nuclear Information System (INIS)

    Meyer, S.F.

    1980-01-01

    Extremely smooth, uniform metal coatings of micrometer thicknesses on microscopic glass spheres (microspheres) are often needed as targets for inertial confinement fusion (ICF) experiments. The first part of this paper reviews those methods used successfully to provide metal coated microspheres for ICF targets, including magnetron sputtering, electro- and electroless plating, and chemical vapor pyrolysis. The second part of this paper discusses some of the critical aspects of magnetron sputter coating of microspheres, including substrate requirements, the sticking of microspheres during coating (preventing a uniform coating), and the difficulties in growing the desired dense, smooth, uniform microstructure on continuously moving spherical substrates

  5. Microwave measurements of water vapor partial pressure at high temperatures

    International Nuclear Information System (INIS)

    Latorre, V.R.

    1991-01-01

    One of the desired parameters in the Yucca Mountain Project is the capillary pressure of the rock comprising the repository. This parameter is related to the partial pressure of water vapor in the air when in equilibrium with the rock mass. Although there are a number of devices that will measure the relative humidity (directly related to the water vapor partial pressure), they generally will fail at temperatures on the order of 150C. Since thee author has observed borehole temperatures considerably in excess of this value in G-Tunnel at the Nevada Test Site (NTS), a different scheme is required to obtain the desired partial pressure data at higher temperatures. This chapter presents a microwave technique that has been developed to measure water vapor partial pressure in boreholes at temperatures up to 250C. The heart of the system is a microwave coaxial resonator whose resonant frequency is inversely proportional to the square root of the real part of the complex dielectric constant of the medium (air) filling the resonator. The real part of the dielectric constant of air is approximately equal to the square of the refractive index which, in turn, is proportional to the partial pressure of the water vapor in the air. Thus, a microwave resonant cavity can be used to measure changes in the relative humidity or partial pressure of water vapor in the air. Since this type of device is constructed of metal, it is able to withstand very high temperatures. The actual limitation is the temperature limit of the dielectric material in the cable connecting the resonator to its driving and monitoring equipment-an automatic network analyzer in our case. In the following sections, the theory of operation, design, construction, calibration and installation of the microwave diagnostics system is presented. The results and conclusions are also presented, along with suggestions for future work

  6. Fiber optic humidity sensor using water vapor condensation.

    Science.gov (United States)

    Limodehi, Hamid E; Légaré, François

    2017-06-26

    The rate of vapor condensation on a solid surface depends on the ambient relative humidity (RH). Also, surface plasmon resonance (SPR) on a metal layer is sensitive to the refractive index change of its adjacent dielectric. The SPR effect appears as soon as a small amount of moisture forms on the sensor, resulting in a decrease in the amount of light transmitted due to plasmonic loss. Using this concept, we developed a fiber optic humidity sensor based on SPR. It can measure the ambient RH over a dynamic range from 10% to 85% with an accuracy of 3%.

  7. Organometallic vapor-phase epitaxy theory and practice

    CERN Document Server

    Stringfellow, Gerald B

    1989-01-01

    Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the

  8. Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide

    DEFF Research Database (Denmark)

    Sun, Jie; Lindvall, Niclas; Cole, Matthew T.

    2012-01-01

    Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes...

  9. Microwave assisted chemical vapor infiltration

    International Nuclear Information System (INIS)

    Devlin, D.J.; Currier, R.P.; Barbero, R.S.; Espinoza, B.F.; Elliott, N.

    1991-01-01

    A microwave assisted process for production of continuous fiber reinforced ceramic matrix composites is described. A simple apparatus combining a chemical vapor infiltration reactor with a conventional 700 W multimode oven is described. Microwave induced inverted thermal gradients are exploited with the ultimate goal of reducing processing times on complex shapes. Thermal gradients in stacks of SiC (Nicalon) cloths have been measured using optical thermometry. Initial results on the ''inside out'' deposition of SiC via decomposition of methyltrichlorosilane in hydrogen are presented. Several key processing issues are identified and discussed. 5 refs

  10. Overview of chemical vapor infiltration

    Energy Technology Data Exchange (ETDEWEB)

    Besmann, T.M.; Stinton, D.P.; Lowden, R.A.

    1993-06-01

    Chemical vapor infiltration (CVI) is developing into a commercially important method for the fabrication of continuous filament ceramic composites. Current efforts are focused on the development of an improved understanding of the various processes in CVI and its modeling. New approaches to CVI are being explored, including pressure pulse infiltration and microwave heating. Material development is also proceeding with emphasis on improving the oxidation resistance of the interfacial layer between the fiber and matrix. This paper briefly reviews these subjects, indicating the current state of the science and technology.

  11. A Lithium Vapor Box Divertor Similarity Experiment

    Science.gov (United States)

    Cohen, Robert A.; Emdee, Eric D.; Goldston, Robert J.; Jaworski, Michael A.; Schwartz, Jacob A.

    2017-10-01

    A lithium vapor box divertor offers an alternate means of managing the extreme power density of divertor plasmas by leveraging gaseous lithium to volumetrically extract power. The vapor box divertor is a baffled slot with liquid lithium coated walls held at temperatures which increase toward the divertor floor. The resulting vapor pressure differential drives gaseous lithium from hotter chambers into cooler ones, where the lithium condenses and returns. A similarity experiment was devised to investigate the advantages offered by a vapor box divertor design. We discuss the design, construction, and early findings of the vapor box divertor experiment including vapor can construction, power transfer calculations, joint integrity tests, and thermocouple data logging. Heat redistribution of an incident plasma-based heat flux from a typical linear plasma device is also presented. This work supported by DOE Contract No. DE-AC02-09CH11466 and The Princeton Environmental Institute.

  12. Thermogravimetric measurements of liquid vapor pressure

    International Nuclear Information System (INIS)

    Rong Yunhong; Gregson, Christopher M.; Parker, Alan

    2012-01-01

    Highlights: ► Rapid determination of vapor pressure by TGA. ► Demonstration of limitations of currently available approaches in literature. ► New model for vapor pressure assessment of small size samples in TGA. ► New model accounts for vapor diffusion and sample geometry and measures vapor pressure normally within 10%. - Abstract: A method was developed using thermo-gravimetric analysis (TGA) to determine the vapor pressure of volatile liquids. This is achieved by measuring the rate of evaporation (mass loss) of a pure liquid contained within a cylindrical pan. The influence of factors like sample geometry and vapor diffusion on evaporation rate are discussed. The measurement can be performed across a wide range of temperature yielding reasonable results up to 10 kPa. This approach may be useful as a rapid and automatable method for measuring the volatility of flavor and fragrance raw materials.

  13. Multi-cathode metal vapor arc ion source

    International Nuclear Information System (INIS)

    Brown, I.G.; MacGill, R.A.

    1988-01-01

    This patent describes an apparatus for generating an ion beam. It comprises: a vacuum enclosure; a support member; cathodes; an anode; means for transporting; a source of electrical power; means for producing an electric arc; means for guiding; and means for extracting ions

  14. Ion vapor deposition and its application

    International Nuclear Information System (INIS)

    Bollinger, H.; Schulze, D.; Wilberg, R.

    1981-01-01

    Proceeding from the fundamentals of ion vapor deposition the characteristic properties of ion-plated coatings are briefly discussed. Examples are presented of successful applications of ion-plated coatings such as coatings with special electrical and dielectric properties, coatings for corrosion prevention, and coatings for improving the surface properties. It is concluded that ion vapor deposition is an advantageous procedure in addition to vapor deposition. (author)

  15. Continuous condensation device for vapors in the atmosphere

    International Nuclear Information System (INIS)

    Tricot, M.

    1983-01-01

    The continuous condensation device for vapors from the atmosphere is such those in which this atmosphere circulates in contact with a cold source involving the condensation of these vapors. It includes a thermoelectric module using the Peltier effect; the hot side is bonded to a heat sink and the cold side is in contact with an insulated condensation chamber in which flows the atmosphere charged with vapors to be condensated. The condensation chamber has a metallic structure through which a low voltage direct current is passed; this structure has small blades with holes, through which the condensate flows under gravity in the lower part of the chamber which have a hole to evacuate this liquid. The thermoelectric module comprises an assembly of thermocouples made of an array of alloy plates. The temperature inside the condensation chamber is maintained at just above 0 0 C. This device is used for the sampling of atmosphere water especially in the determination of tritium content of the atmosphere around nuclear installations [fr

  16. Monofilament Vaporization Propulsion (MVP) System, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Monofilament Vaporization Propulsion (MVP) is a new propulsion technology targeted at secondary payload applications. It does not compromise on performance while...

  17. Experiences of marijuana-vaporizer users.

    Science.gov (United States)

    Malouff, John M; Rooke, Sally E; Copeland, Jan

    2014-01-01

    Using a marijuana vaporizer may have potential harm-reduction advantages on smoking marijuana, in that the user does not inhale smoke. Little research has been published on use of vaporizers. In the first study of individuals using a vaporizer on their own initiative, 96 adults anonymously answered questions about their experiences with a vaporizer and their use of marijuana with tobacco. Users identified 4 advantages to using a vaporizer over smoking marijuana: perceived health benefits, better taste, no smoke smell, and more effect from the same amount of marijuana. Users identified 2 disadvantages: inconvenience of setup and cleaning and the time it takes to get the device operating for each use. Only 2 individuals combined tobacco in the vaporizer mix, whereas 15 combined tobacco with marijuana when they smoked marijuana. Almost all participants intended to continue using a vaporizer. Vaporizers seem to have appeal to marijuana users, who perceive them as having harm-reduction and other benefits. Vaporizers are worthy of experimental research evaluating health-related effects of using them.

  18. Vapor pressures and thermophysical properties of selected hexenols and recommended vapor pressure for hexan-1-ol

    Czech Academy of Sciences Publication Activity Database

    Štejfa, V.; Fulem, Michal; Růžička, K.; Matějka, P.

    2015-01-01

    Roč. 402, Sep (2015), 18-29 ISSN 0378-3812 Institutional support: RVO:68378271 Keywords : alcohols * vapor pressure * heat capacity * ideal - gas thermodynamic properties * vaporization enthalpy Subject RIV: BJ - Thermodynamics Impact factor: 1.846, year: 2015

  19. Metals on graphene and carbon nanotube surfaces: From mobile atoms to atomtronics to bulk metals to clusters and catalysts

    KAUST Repository

    Sarkar, Santanu C.; Moser, Matthew L.; Tian, Xiaojuan; Zhang, Xixiang; Al-Hadeethi, Yas Fadel; Haddon, Robert C.

    2014-01-01

    , and the next generation energy devices. We touch on chemical vapor deposition (CVD) graphene grown on metals, the reactivity of its surface, and its use as a template for asymmetric graphene functionalization chemistry (ultrathin Janus discs). We highlight some

  20. Enthalpy of vaporization and vapor pressure of whiskey lactone and menthalactone by correlation gas chromatography

    International Nuclear Information System (INIS)

    Simmons, Daniel; Chickos, James

    2017-01-01

    Highlights: • The vapor pressure and vaporization enthalpies of cis and trans-whiskey lactone have been evaluated. • Enthalpies of vaporization and vapor pressures of (+)-isomintlactone and (−)-mintlactone were also evaluated. • The sublimation enthalpy and corresponding vapor pressure of (+) -isomintlactone at T = 298.15 K is estimated. - Abstract: Enthalpies of vaporization at T = 298.15 K of cis and trans-whiskey lactone have been evaluated by correlation gas chromatography to be (68.4 ± 1.7) kJ·mol −1 and (67.5 ± 1.7) kJ·mol −1 , respectively. The enthalpies of vaporization of isomintlactone and mintlactone also evaluated by correlation gas chromatography have been found to have vaporization enthalpies of (74.2 ± 1.8) kJ·mol −1 and (73.2 ± 1.8) kJ·mol −1 respectively. The vapor pressures for cis and trans-whiskey lactone at T = 298.15 K have been evaluated as (1.5 ± 0.09) Pa and (2.0 ± 0.1) Pa using vapor pressures of a series of lactones as standards. Vapor pressures for isomintlactone and mintlactone were evaluated as (0.26 ± 0.012) Pa and (0.33 ± 0.02) Pa, respectively. Fusion and sublimation enthalpies for (+)-isomintlactone as well as the vapor pressure of the solid have been estimated.

  1. A study of enhanced diffusion during high dose high flux pulsed metal ion implantation into steel and aluminium

    International Nuclear Information System (INIS)

    Zhang Tonghe; Ji Chengzhou; Shen Jinghua; Chen Jun

    1992-01-01

    The depth profiles of metal ions implanted into steel and aluminium were measured by Rutherford backscattering (RBS). The ions of Mo, W and Y, produced by a metal vapour vacuum are ion source (MEVVA) were implanted at an energy range from 25 to 50 keV for doses of (2-5)x10 17 cm -2 into H13 steel and aluminium. Beam currents were from 0.5 to 1.0 A. The beam flux is in the range of 25 to 75 μAcm -2 . In order to simulate the profiles, a formula which includes the sputtering yield, diffusion coefficients and reaction rate was obtained. The results demonstrate that the penetration depth and retained dose increase with increasing beam flux for Mo implanted into aluminium. The peak concentration of Mo implanted H13 steel increases with increasing ion flux. In contrast to this for Y implantation into steel, the peak concentration of Y decreases with increasing ion flux. For an ion flux of 25 μAcm -2 for Mo, Y and W implantation into steel, the penetration depth and retained dose are 3-5 times greater than the theoretical values. The diffusion coefficients are about 10 -16 to 10 -15 s -1 . If the ion flux is greater than 47 μAcm -2 , the penetration depth and retained dose are 5 to 10 times greater than the theoretical values for Mo implanted aluminium. The diffusion coefficients increase with increasing ion flux for Mo implanted aluminium. The diffusion coefficients hardly change with increasing ion flux for Y and Mo implanted H13 steel. The retained dose increases 0.43 to 1.16 times for Y implanted steel for an ion flux of 25 μAcm -2 . Finally, the influence of phases precipitates, reaction rate and diffusion on retained dose, diffusion coefficient and penetration depth are discussed. (orig.)

  2. Optical Sensor for Diverse Organic Vapors at ppm Concentration Ranges

    Directory of Open Access Journals (Sweden)

    Dora M. Paolucci

    2011-03-01

    Full Text Available A broadly responsive optical organic vapor sensor is described that responds to low concentrations of organic vapors without significant interference from water vapor. Responses to several classes of organic vapors are highlighted, and trends within classes are presented. The relationship between molecular properties (vapor pressure, boiling point, polarizability, and refractive index and sensor response are discussed.

  3. MEMS Lubrication by In-Situ Tribochemical Reactions From the Vapor Phase.

    Energy Technology Data Exchange (ETDEWEB)

    Dugger, Michael Thomas; Asay, David B.; Kim, Seong H.

    2008-01-01

    Vapor Phase Lubrication (VPL) of silicon surfaces with pentanol has been demonstrated. Two potential show stoppers with respect to application of this approach to real MEMS devices have been investigated. Water vapor was found to reduce the effectiveness of VPL with alcohol for a given alcohol concentration, but the basic reaction mechanism observed in water-free environments is still active, and devices operated much longer in mixed alcohol and water vapor environments than with chemisorbed monolayer lubricants alone. Complex MEMS gear trains were successfully lubricated with alcohol vapors, resulting in a factor of 104 improvement in operating life without failure. Complex devices could be made to fail if operated at much higher frequencies than previously used, and there is some evidence that the observed failure is due to accumulation of reaction products at deeply buried interfaces. However, if hypothetical reaction mechanisms involving heated surfaces are valid, then the failures observed at high frequency may not be relevant to operation at normal frequencies. Therefore, this work demonstrates that VPL is a viable approach for complex MEMS devices in conventional packages. Further study of the VPL reaction mechanisms are recommended so that the vapor composition may be optimized for low friction and for different substrate materials with potential application to conventionally fabricated, metal alloy parts in weapons systems. Reaction kinetics should be studied to define effective lubrication regimes as a function of the partial pressure of the vapor phase constituent, interfacial shear rate, substrate composition, and temperature.

  4. Numerical analysis of fragmentation mechanisms in vapor explosions

    Energy Technology Data Exchange (ETDEWEB)

    Koshizuka, Seiichi; Ikeda, Hirokazu; Oka, Yoshiaki [Tokyo Univ., Tokai, Ibaraki (Japan). Nuclear Engineering Research Lab.

    1998-01-01

    Fragmentation of molten metal is the key process in vapor explosions. However this process is so rapid that the mechanisms have not been clarified yet in the experimental studies. Besides, numerical simulation is difficult because we have to analyze water, steam and molten metal simultaneously with evaporation and fragmentation. The authors have been developing a new numerical method, the Moving Particle Semi-implicit (MPS) method, based on moving particles and their interactions. Grids are not necessary. Incompressible flows with fragmentation on free surfaces have been calculated successfully using the MPS method. In the present study numerical simulation of the fragmentation processes using the MPS method is carried out to investigate the mechanisms. A numerical model to calculate evaporation from water to steam is developed. In this model, new particles are generated on water-steam interfaces. Effect of evaporation is also investigated. Growth of the filament is not accelerated when the normal evaporation is considered. This is because the normal evaporation needs a longer time than the moment of the jet impingement, though the filament growth is decided in this moment. Next, rapid evaporation based on spontaneous nucleation is considered. The filament growth is markedly accelerated. This result is consistent with the experimental fact that the spontaneous nucleation temperature is a necessary condition of small-scale vapor explosions. (J.P.N.)

  5. Atomic vapor laser isotope separation

    International Nuclear Information System (INIS)

    Stern, R.C.; Paisner, J.A.

    1985-01-01

    Atomic vapor laser isotope separation (AVLIS) is a general and powerful technique. A major present application to the enrichment of uranium for light-water power reactor fuel has been under development for over 10 years. In June 1985 the Department of Energy announced the selection of AVLIS as the technology to meet the nation's future need for the internationally competitive production of uranium separative work. The economic basis for this decision is considered, with an indicated of the constraints placed on the process figures of merit and the process laser system. We then trace an atom through a generic AVLIS separator and give examples of the physical steps encountered, the models used to describe the process physics, the fundamental parameters involved, and the role of diagnostic laser measurements

  6. SOIL VAPOR EXTRACTION TECHNOLOGY: REFERENCE HANDBOOK

    Science.gov (United States)

    Soil vapor extraction (SVE) systems are being used in Increasing numbers because of the many advantages these systems hold over other soil treatment technologies. SVE systems appear to be simple in design and operation, yet the fundamentals governing subsurface vapor transport ar...

  7. Mechanics of gas-vapor bubbles

    NARCIS (Netherlands)

    Hao, Yue; Zhang, Yuhang; Prosperetti, Andrea

    2017-01-01

    Most bubbles contain a mixture of vapor and incondensible gases. While the limit cases of pure vapor and pure gas bubbles are well studied, much less is known about the more realistic case of a mixture. The bubble contents continuously change due to the combined effects of evaporation and

  8. Vapor Pressures of Several Commercially Used Alkanolamines

    NARCIS (Netherlands)

    Klepacova, Katarina; Huttenhuis, Patrick J. G.; Derks, Peter W. J.; Versteeg, Geert F.; Klepáčová, Katarína

    For the design of acid gas treating processes, vapor-liquid equilibrium (VLE) data must be available of the solvents to be applied. In this study the vapor pressures of seven frequently industrially used alkanolamines (diethanolamine, N-methylethanolamine, N,N-dimethylethanolamine,

  9. Recommended Vapor Pressure of Solid Naphthalen

    Czech Academy of Sciences Publication Activity Database

    Růžička, K.; Fulem, Michal; Růžička, V.

    2005-01-01

    Roč. 50, - (2005), s. 1956-1970 ISSN 0021-9568 Institutional research plan: CEZ:AV0Z10100521 Keywords : solid naphthalene * vapor pressure * enthalpy of vaporization * enthalpy of fusion Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.610, year: 2005

  10. Effect of granosan vapors on mitosis

    Energy Technology Data Exchange (ETDEWEB)

    Lishenko, N P; Lishenko, I D

    1974-01-01

    Experiments were performed to determine the effects of granosan on the germination of vetch seeds. Vetch seeds were stored from 4-6 days in ethyl mercuric chloride vapors. Results indicated that the vapors caused a sharp decrease in germination and caused chromosomal aberrations during the anaphase.

  11. Condensation of vapor bubble in subcooled pool

    Science.gov (United States)

    Horiuchi, K.; Koiwa, Y.; Kaneko, T.; Ueno, I.

    2017-02-01

    We focus on condensation process of vapor bubble exposed to a pooled liquid of subcooled conditions. Two different geometries are employed in the present research; one is the evaporation on the heated surface, that is, subcooled pool boiling, and the other the injection of vapor into the subcooled pool. The test fluid is water, and all series of the experiments are conducted under the atmospheric pressure condition. The degree of subcooling is ranged from 10 to 40 K. Through the boiling experiment, unique phenomenon known as microbubble emission boiling (MEB) is introduced; this phenomenon realizes heat flux about 10 times higher than the critical heat flux. Condensation of the vapor bubble is the key phenomenon to supply ambient cold liquid to the heated surface. In order to understand the condensing process in the MEB, we prepare vapor in the vapor generator instead of the evaporation on the heated surface, and inject the vapor to expose the vapor bubble to the subcooled liquid. Special attention is paid to the dynamics of the vapor bubble detected by the high-speed video camera, and on the enhancement of the heat transfer due to the variation of interface area driven by the condensation.

  12. 40 CFR 796.1950 - Vapor pressure.

    Science.gov (United States)

    2010-07-01

    ... (CONTINUED) CHEMICAL FATE TESTING GUIDELINES Physical and Chemical Properties § 796.1950 Vapor pressure. (a.... In addition, chemicals that are likely to be gases at ambient temperatures and which have low water... gases until the measured vapor pressure is constant, a process called “degassing.” Impurities more...

  13. Building blocks for ionic liquids: Vapor pressures and vaporization enthalpies of 1-(n-alkyl)-imidazoles

    International Nuclear Information System (INIS)

    Emel'yanenko, Vladimir N.; Portnova, Svetlana V.; Verevkin, Sergey P.; Skrzypczak, Andrzej; Schubert, Thomas

    2011-01-01

    Highlights: → We measured vapor pressures of the 1-(n-alkyl)-imidazoles by transpiration method. → Variations on the alkyl chain length n were C 3 , C 5 -C 7 , and C 9 -C 10 . → Enthalpies of vaporization were derived from (p, T) dependencies. → Enthalpies of vaporization at 298.15 K were linear dependent on the chain length. - Abstract: Vapor pressures of the linear 1-(n-alkyl)-imidazoles with the alkyl chain C 3 , C 5 -C 7 , and C 9 -C 10 have been measured by the transpiration method. The molar enthalpies of vaporization Δ l g H m of these compounds were derived from the temperature dependencies of vapor pressures. A linear correlation of enthalpies of vaporization Δ l g H m (298.15 K) of the 1-(n-alkyl)-imidazoles with the chain length has been found.

  14. Separating and recycling metals from mixed metallic particles of crushed electronic wastes by vacuum metallurgy.

    Science.gov (United States)

    Zhan, Lu; Xu, Zhenming

    2009-09-15

    During the treatment of electronic wastes, a crushing process is usually used to strip metals from various base plates. Several methods have been applied to separate metals from nonmetals. However, mixed metallic particles obtained from these processes are still a mixture of various metals, including some toxic heavy metals such as lead and cadmium. With emphasis on recovering copper and other precious metals, there have hitherto been no satisfactory methods to recover these toxic metals. In this paper, the criterion of separating metals from mixed metallic particles by vacuum metallurgy is built. The results show that the metals with high vapor pressure have been almost recovered completely, leading to a considerable reduction of environmental pollution. In addition, the purity of copper in mixed particles has been improved from about 80 wt % to over 98 wt %.

  15. Binding Energy, Vapor Pressure and Melting Point of Semiconductor Nanoparticles

    International Nuclear Information System (INIS)

    H. H. Farrell; C. D. Van Siclen

    2007-01-01

    Current models for the cohesive energy of nanoparticles generally predict a linear dependence on the inverse particle diameter for spherical clusters, or, equivalently, on the inverse of the cube root of the number of atoms in the cluster. Although this is generally true for metals, we find that for the group IV semiconductors, C, Si and Ge, this linear dependence does not hold. Instead, using first principles, density functional theory calculations to calculate the binding energy of these materials, we find a quadratic dependence on the inverse of the particle size. Similar results have also been obtained for the metallic group IV elements Sn and Pb. This is in direct contradiction to current assumptions. Further, as a consequence of this quadratic behavior, the vapor pressure of semiconductor nanoparticles rises more slowly with decreasing size than would be expected. In addition, the melting point of these nanoparticles will experience less suppression than experienced by metal nanoparticles with comparable bulk binding energies. This non-linearity also affects sintering or Ostwald ripening behavior of these nanoparticles as well as other physical properties that depend on the nanoparticle binding energy. The reason for this variation in size dependence involves the covalent nature of the bonding in semiconductors, and even in the 'poor' metals. Therefore, it is expected that this result will hold for compound semiconductors as well as the elemental semiconductors

  16. Water vapor retrieval over many surface types

    Energy Technology Data Exchange (ETDEWEB)

    Borel, C.C.; Clodius, W.C.; Johnson, J.

    1996-04-01

    In this paper we present a study of of the water vapor retrieval for many natural surface types which would be valuable for multi-spectral instruments using the existing Continuum Interpolated Band Ratio (CIBR) for the 940 nm water vapor absorption feature. An atmospheric code (6S) and 562 spectra were used to compute the top of the atmosphere radiance near the 940 nm water vapor absorption feature in steps of 2.5 nm as a function of precipitable water (PW). We derive a novel technique called ``Atmospheric Pre-corrected Differential Absorption`` (APDA) and show that APDA performs better than the CIBR over many surface types.

  17. Metal-metal-hofteproteser

    DEFF Research Database (Denmark)

    Ulrich, Michael; Overgaard, Søren; Penny, Jeannette

    2014-01-01

    In Denmark 4,456 metal-on-metal (MoM) hip prostheses have been implanted. Evidence demonstrates that some patients develope adverse biological reactions causing failures of MoM hip arthroplasty. Some reactions might be systemic. Failure rates are associated with the type and the design of the Mo...

  18. Water Vapor Permeation in Plastics

    Energy Technology Data Exchange (ETDEWEB)

    Keller, Paul E. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Kouzes, Richard T. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2017-01-01

    Polyvinyl toluene (PVT) and polystyrene (PS) (referred to as “plastic scintillator”) are used for gamma ray detectors. A significant decrease in radiation detection performance has been observed in some PVT-based gamma-ray detectors in systems in outdoor environments as they age. Recent studies have revealed that plastic scintillator can undergo an environmentally related material degradation that adversely affects gamma ray detection performance under certain conditions and histories. A significant decrease in sensitivity has been seen in some gamma-ray detectors in some systems as they age. The degradation of sensitivity of plastic scintillator over time is due to a variety of factors, and the term “aging” is used to encompass all factors. Some plastic scintillator samples show no aging effects (no significant change in sensitivity over more than 10 years), while others show severe aging (significant change in sensitivity in less than 5 years). Aging effects arise from weather (variations in heat and humidity), chemical exposure, mechanical stress, light exposure, and loss of volatile components. The damage produced by these various causes can be cumulative, causing observable damage to increase over time. Damage may be reversible up to some point, but becomes permanent under some conditions. The objective of this report is to document the phenomenon of permeability of plastic scintillator to water vapor and to derive the relationship between time, temperature, humidity and degree of water penetration in plastic. Several conclusions are documented about the properties of water permeability of plastic scintillator.

  19. Metallated metal-organic frameworks

    Energy Technology Data Exchange (ETDEWEB)

    Bury, Wojciech; Farha, Omar K.; Hupp, Joseph T.; Mondloch, Joseph E.

    2017-08-22

    Porous metal-organic frameworks (MOFs) and metallated porous MOFs are provided. Also provided are methods of metallating porous MOFs using atomic layer deposition and methods of using the metallated MOFs as catalysts and in remediation applications.

  20. Point of net vapor generation and vapor void fraction in subcooled boiling

    International Nuclear Information System (INIS)

    Saha, P.; Zuber, N.

    1974-01-01

    An analysis is presented directed at predicting the point of net vapor generation and vapor void fraction in subcooled boiling. It is shown that the point of net vapor generation depends upon local conditions--thermal and fluid dynamic. Thus, at low mass flow rates the net vapor generation is determined by thermal conditions, whereas at high mass flow rates the phenomenon is hydrodynamically controlled. Simple criteria are derived which can be used to predict these local conditions for net vapor generation. These criteria are used to determine the vapor void fraction is subcooled boiling. Comparison between the results predicted by this analysis and experimental data presently available shows good agreement for wide range of operating conditions, fluids and geometries. (U.S.)

  1. GOES WATER VAPOR TRANSPORT V1

    Data.gov (United States)

    National Aeronautics and Space Administration — The GOES Water Vapor Transport CD contains nineteen months of geostationary satellite-derived products from the GOES-8 satellite spanning the 1987-1988 El Nino...

  2. Vaporization of Samarium trichloride studied by thermogravimetry

    International Nuclear Information System (INIS)

    Esquivel, Marcelo R.; Pasquevich, Daniel M.

    2003-01-01

    In the present work, the vaporization reaction of SmCl 3 (l) obtained from the 'in situ' reaction of Sm 2 O 3 (s) and Cl 2 (g)-C(s) was studied by thermogravimetry under controlled atmosphere. The effects of both the temperature between 825 C degrees and 950 C degrees and the total flow gas on the vaporization rate of the following reaction: SmCl 3 (l) = SmCl 3 (g) were analyzed. The vaporization rate of the process was found to be independent of then total gas flow rate and highly dependent on the temperature. E ap calculation led to a value of 240 ± 10 kJ.mol -1 . A comparison between this value and that of the molar enthalpy of vaporization allow to the conclusion that the reaction occur in conditions near to equilibrium. The SmCl 3 identity was determined by X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS). (author)

  3. Perspective: Highly stable vapor-deposited glasses

    Science.gov (United States)

    Ediger, M. D.

    2017-12-01

    This article describes recent progress in understanding highly stable glasses prepared by physical vapor deposition and provides perspective on further research directions for the field. For a given molecule, vapor-deposited glasses can have higher density and lower enthalpy than any glass that can be prepared by the more traditional route of cooling a liquid, and such glasses also exhibit greatly enhanced kinetic stability. Because vapor-deposited glasses can approach the bottom of the amorphous part of the potential energy landscape, they provide insights into the properties expected for the "ideal glass." Connections between vapor-deposited glasses, liquid-cooled glasses, and deeply supercooled liquids are explored. The generality of stable glass formation for organic molecules is discussed along with the prospects for stable glasses of other types of materials.

  4. Fundamentals of Friction and Vapor Phase Lubrication

    National Research Council Canada - National Science Library

    Gellman, Andrew

    2004-01-01

    This is the final report for the three year research program on "Fundamentals of Friction and Vapor Phase Lubrication" conducted at Carnegie Mellon with support from AFOSR grant number F49630-01-1-0069...

  5. GOES WATER VAPOR TRANSPORT V1

    Data.gov (United States)

    National Aeronautics and Space Administration — The GOES Water Vapor Transport CD contains nineteen months of geostationary satellite-derived products spanning the 1987/1988 El Nino Southern Oscillation (ENSO)...

  6. Drag Reduction by Leidenfrost Vapor Layers

    KAUST Repository

    Vakarelski, Ivan Uriev; Marston, Jeremy O.; Chan, Derek Y. C.; Thoroddsen, Sigurdur T

    2011-01-01

    , we show that such vapor layers can reduce the hydrodynamic drag by over 85%. These results appear to approach the ultimate limit of drag reduction possible by different methods based on gas-layer lubrication and can stimulate the development

  7. DMSP SSMT/2 - Atmospheric Water Vapor Profiler

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The SSM/T-2 sensor is a five channel, total power microwave radiometer with three channels situated symmetrically about the 183.31 GHz water vapor resonance line and...

  8. 78 FR 42595 - Marine Vapor Control Systems

    Science.gov (United States)

    2013-07-16

    ... revise the substance As noted in the NPRM, the changes in this section were of this section. intended... the vapor-moving device, as recommended by CTAC in 1997 to maintain a minimum size of non-flammable...

  9. Vacuum evaporation of pure metals

    OpenAIRE

    Safarian, Jafar; Engh, Thorvald Abel

    2013-01-01

    Theories on the evaporation of pure substances are reviewed and applied to study vacuum evaporation of pure metals. It is shown that there is good agreement between different theories for weak evaporation, whereas there are differences under intensive evaporation conditions. For weak evaporation, the evaporation coefficient in Hertz-Knudsen equation is 1.66. Vapor velocity as a function of the pressure is calculated applying several theories. If a condensing surface is less than one collision...

  10. A technique to depress desflurane vapor pressure.

    Science.gov (United States)

    Brosnan, Robert J; Pypendop, Bruno H

    2006-09-01

    To determine whether the vapor pressure of desflurane could be decreased by using a solvent to reduce the anesthetic molar fraction in a solution (Raoult's Law). We hypothesized that such an anesthetic mixture could produce anesthesia using a nonprecision vaporizer instead of an agent-specific, electronically controlled, temperature and pressure compensated vaporizer currently required for desflurane administration. One healthy adult female dog. Propylene glycol was used as a solvent for desflurane, and the physical characteristics of this mixture were evaluated at various molar concentrations and temperatures. Using a circle system with a breathing bag attached at the patient end and a mechanical ventilator to simulate respiration, an in-circuit, nonprecision vaporizer containing 40% desflurane and 60% propylene glycol achieved an 11.5% +/- 1.0% circuit desflurane concentration with a 5.2 +/- 0.4 (0 = off, 10 = maximum) vaporizer setting. This experiment was repeated with a dog attached to the breathing circuit under spontaneous ventilation with a fresh gas flow of 0.5 L minute(-1). Anesthesia was maintained for over 2 hours at a mean vaporizer setting of 6.2 +/- 0.4, yielding mean inspired and end-tidal desflurane concentrations of 8.7% +/- 0.5% and 7.9% +/- 0.7%, respectively. Rather than alter physical properties of vaporizers to suit a particular anesthetic agent, this study demonstrates that it is also possible to alter physical properties of anesthetic agents to suit a particular vaporizer. However, propylene glycol may not prove an ideal solvent for desflurane because of its instability in solution and substantial-positive deviation from Raoult's Law.

  11. Influence of the temperature, volume and type of solution in the mercury vaporization of dental amalgam residue

    Energy Technology Data Exchange (ETDEWEB)

    Costa, Raquel dalla [Department of Chemical Engineering, State University of Maringa, Maringa - PR (Brazil)], E-mail: raqueldc_eng@yahoo.com.br; Cossich, Eneida Sala; Tavares, Celia Regina Granhen [Department of Chemical Engineering, State University of Maringa, Maringa - PR (Brazil)

    2008-12-15

    One of the qualitative methods for the identification of mercury vapor is what it occurs as a way of chemical reaction between palladium chloride and metallic mercury. Palladium chloride ribbons with yellowish coloration put in contact with the vaporized mercury of dental amalgam residue, liberates palladium and forms mercury chloride in your surface, and starts to have black coloration; this form identify the presence of the mercury vapor in the system. This work studies the influence of temperature, volume and type of barrier-solution in the vaporization of mercury during the period of storage of dental amalgam residues, aiming to establish the best conditions for storage of these residues. It was found that for all tested solutions, the longest storage times without any occurrence of mercury vaporization were obtained in the lowest temperatures tested and the largest solution volumes of barrier-solution. The radiographic effluent presented bigger efficacy in the reduction of the volatilization, increasing the period when the residue was stored, however the analysis of this solution after the vaporization test showed the presence of organic mercury. These results show that water is the most efficient barrier against the vaporization of mercury, since it did not result in organic mercury formation in the effluent solution from the storage process.

  12. Influence of the temperature, volume and type of solution in the mercury vaporization of dental amalgam residue

    International Nuclear Information System (INIS)

    Costa, Raquel dalla; Cossich, Eneida Sala; Tavares, Celia Regina Granhen

    2008-01-01

    One of the qualitative methods for the identification of mercury vapor is what it occurs as a way of chemical reaction between palladium chloride and metallic mercury. Palladium chloride ribbons with yellowish coloration put in contact with the vaporized mercury of dental amalgam residue, liberates palladium and forms mercury chloride in your surface, and starts to have black coloration; this form identify the presence of the mercury vapor in the system. This work studies the influence of temperature, volume and type of barrier-solution in the vaporization of mercury during the period of storage of dental amalgam residues, aiming to establish the best conditions for storage of these residues. It was found that for all tested solutions, the longest storage times without any occurrence of mercury vaporization were obtained in the lowest temperatures tested and the largest solution volumes of barrier-solution. The radiographic effluent presented bigger efficacy in the reduction of the volatilization, increasing the period when the residue was stored, however the analysis of this solution after the vaporization test showed the presence of organic mercury. These results show that water is the most efficient barrier against the vaporization of mercury, since it did not result in organic mercury formation in the effluent solution from the storage process

  13. Diatomaceous earth and activated bauxite used as granular sorbents for the removal of sodium chloride vapor from hot flue gas

    Energy Technology Data Exchange (ETDEWEB)

    Lee, S.H.D.; Swift, W.M.; Johnson, I.

    1980-01-01

    Diatomaceous earth and activated bauxite were tested as granular sorbents for use as filter media in granular-bed filters for the removal of gaseous alkali metal compounds from the hot (800/sup 0/C) flue gas of PFBC. Tests were performed at atmospheric pressure, using NaCl vapor transported in relatively dry simulated flue gas of PFBC. Either a fixed-bed combustor or a high-temperature sorption test rig was used. The effects of sorbent bed temperature, superficial gas velocity, gas hourly space velocity, and NaCl-vapor concentration in flue gas on the sorption behavior of these two sorbents and their ultimate sorption capacities were determined. Both diatomaceous earth and activated bauxite were found to be very effective in removing NaCl vapor from flue gas. Preliminary cost evaluations showed that they are economically attractive as granular sorbents for cleaning alkali vapor from simulated flue gas.

  14. A heated vapor cell unit for dichroic atomic vapor laser lock in atomic rubidium.

    Science.gov (United States)

    McCarron, Daniel J; Hughes, Ifan G; Tierney, Patrick; Cornish, Simon L

    2007-09-01

    The design and performance of a compact heated vapor cell unit for realizing a dichroic atomic vapor laser lock (DAVLL) for the D(2) transitions in atomic rubidium is described. A 5 cm long vapor cell is placed in a double-solenoid arrangement to produce the required magnetic field; the heat from the solenoid is used to increase the vapor pressure and correspondingly the DAVLL signal. We have characterized experimentally the dependence of important features of the DAVLL signal on magnetic field and cell temperature. For the weaker transitions both the amplitude and gradient of the signal are increased by an order of magnitude.

  15. A heated vapor cell unit for dichroic atomic vapor laser lock in atomic rubidium

    International Nuclear Information System (INIS)

    McCarron, Daniel J.; Hughes, Ifan G.; Tierney, Patrick; Cornish, Simon L.

    2007-01-01

    The design and performance of a compact heated vapor cell unit for realizing a dichroic atomic vapor laser lock (DAVLL) for the D 2 transitions in atomic rubidium is described. A 5 cm long vapor cell is placed in a double-solenoid arrangement to produce the required magnetic field; the heat from the solenoid is used to increase the vapor pressure and correspondingly the DAVLL signal. We have characterized experimentally the dependence of important features of the DAVLL signal on magnetic field and cell temperature. For the weaker transitions both the amplitude and gradient of the signal are increased by an order of magnitude

  16. Vapor Explosions with Subcooled Freon

    International Nuclear Information System (INIS)

    Henry, R.E.; Fauske, Hans K.; McUmber, L.M.

    1976-01-01

    Explosive vapor formation accompanied by destructive shock waves, can be produced when two liquids, at much different temperatures, are brought into intimate contact. A proposed analytical model states that the interface temperature upon contact between the two liquid systems, gust be greater than or equal to the spontaneous nucleation temperature of that liquid-liquid system and that the thermal boundary layer must be sufficiently developed to support a critical size cavity. For time scales greater than 10-12 sec, the interface temperature upon contact of two semi-infinite masses, with constant thermal properties, can be related to the initial liquid temperatures. The spontaneous nucleation behavior at the interface can either be heterogeneous or homogeneous in nature. In either case, the critical size cavities, which initiate the vaporization process, are produced by local density fluctuations within the cold liquid. For homogeneous conditions, the two liquids present a well-wetted system and the vapor embryos are produced entirely within the cold liquid. For heterogeneous conditions, which result from poor, or imperfect wetting, at the liquid-liquid interface, the critical sized cavities are created at the interface at somewhat lower temperatures. A sequence of experiments, using Freon-22 and water, Freon-22 and mineral oil, and Freon-12 and mineral oil have been performed to test this spontaneous nucleation premise. For Freon-22 at its normal boiling point, the interface temperature of the water must be at least 77 deg. C before the interface temperature equals or exceeds the minimum homogeneous nucleation value of 54 deg. C and 84 deg. C before the interface temperature equals 60 deg. C where the homogeneous nucleation rate becomes truly explosive. The Freon-water test demonstrated explosive interactions for water temperatures considerably lower than this value and this was attributed to the heterogeneous nucleation characteristics of that particular system

  17. Effect of impact angle on vaporization

    Science.gov (United States)

    Schultz, Peter H.

    1996-09-01

    Impacts into easily vaporized targets such as dry ice and carbonates generate a rapidly expanding vapor cloud. Laboratory experiments performed in a tenuous atmosphere allow deriving the internal energy of this cloud through well-established and tested theoretical descriptions. A second set of experiments under near-vacuum conditions provides a second measure of energy as the internal energy converts to kinetic energy of expansion. The resulting data allow deriving the vaporized mass as a function of impact angle and velocity. Although peak shock pressures decrease with decreasing impact angle (referenced to horizontal), the amount of impact-generated vapor is found to increase and is derived from the upper surface. Moreover, the temperature of the vapor cloud appears to decrease with decreasing angle. These unexpected results are proposed to reflect the increasing roles of shear heating and downrange hypervelocity ricochet impacts created during oblique impacts. The shallow provenance, low temperature, and trajectory of such vapor have implications for larger-scale events, including enhancement of atmospheric and biospheric stress by oblique terrestrial impacts and impact recycling of the early atmosphere of Mars.

  18. A review of refractory materials for vapor-anode AMTEC cells

    Science.gov (United States)

    King, Jeffrey C.; El-Genk, M. S.

    2000-01-01

    Recently, refractory alloys have been considered as structural materials for vapor-anode Alkali Metal Thermal-to-Electric Conversion (AMTEC) cells, for extended (7-15 years) space missions. This paper reviewed the existing database for refractory metals and alloys of potential use as structural materials for vapor-anode sodium AMTEC cells. In addition to requiring that the vapor pressure of the material be below 10-9 torr (133 nPa) at a typical hot side temperature of 1200 K, other screening considerations were: (a) low thermal conductivity, low thermal radiation emissivity, and low linear thermal expansion coefficient; (b) low ductile-to-brittle transition temperature, high yield and rupture strengths and high strength-to-density ratio; and (c) good compatibility with the sodium AMTEC operating environment, including high corrosion resistance to sodium in both the liquid and vapor phases. Nb-1Zr (niobium-1% zirconium) alloy is recommended for the hot end structures of the cell. The niobium alloy C-103, which contains the oxygen gettering elements zirconium and hafnium as well as titanium, is recommended for the colder cell structure. This alloy is stronger and less thermally conductive than Nb-1Zr, and its use in the cell wall reduces parasitic heat losses by conduction to the condenser. The molybdenum alloy Mo-44.5Re (molybdenum-44.5% rhenium) is also recommended as a possible alternative for both structures if known problems with oxygen pick up and embrittlement of the niobium alloys proves to be intractable. .

  19. New approaches to the study of lanthanide/actinide chloride: aluminum chloride vapor phase complexes

    International Nuclear Information System (INIS)

    Peterson, E.J.; Caird, J.A.; Carnall, W.T.; Hessler, J.P.; Hoekstra, H.R.; Williams, C.W.

    1979-01-01

    The spectrophotometric technique for vapor density measurements of complexed metal ions has been reformulated to account for temperature dependent effects and multi-species systems. Analysis of vapor pressure information indicates that the NdCl 3 --AlCl 3 and HoCl 3 --AlCl 3 systems are adequately explained by the existence of three vapor species. The two higher molecular weight complexes LnAl 4 Cl 15 and LnAl 3 Cl 12 were first proposed by Oeye and Gruen. The newly identified higher temperature species, HoAl 2 Cl 9 , contributes significantly to the vapor density above 750 0 K and below 3 atm of dimer pressure. In view of the consistency of the Nd +3 and Ho +3 chemistry the data for the Sm +3 system should be viewed with reservation. A new method for vapor density measurements involving use of radioactive tracers has been discussed in terms of its applicability to the study of (Ln,An)Cl 3 (AlCl 3 )/sub x/ systems

  20. Nucleation and growth of vapor bubbles in the liquid bulk and at a solid surface

    International Nuclear Information System (INIS)

    Yagov, V.V.

    1977-01-01

    The main achievements in the study of the vapor phase origin in liquid and the subsequent growth of the vapor bubbles are presented briefly, and a number of issues on which there is no single opinion as yet are also outlined. The theory of homogeneous nucleation and a great number of experiments make it possible not only to explain qualitatively the causes of spontaneous formation of vapor nucleation centers in the metastable liquid but provides a simple computational relation for the estimating the intensity of this process. None of the existing hypotheses, however, can give a complete answer to the question of the mechanism of the vapor phase nucleation on a solid surface under ''pure conditions'', although this is a more pressing problem. At the same time, the role of cavities of reservoir type (with a narrow orifice) on the surface under heating as reliable stabilizers of the vapor formation (especially in liquid metals) is clarified from the practical point of view. Thus, the identification of technology for production of such cavities would make it possible to increase substantially the efficiency of heat transferring surfaces. Any computational relations for the growth of bubbles on the heating surface also are (and, according to the author, necessarily will be) approximate ones, although considerable success has been achieved in this field

  1. Complete long-term corrosion protection with chemical vapor deposited graphene

    DEFF Research Database (Denmark)

    Yu, Feng; Camilli, Luca; Wang, Ting

    2018-01-01

    Despite numerous reports regarding the potential of graphene for corrosion protection, examples of chemical vapor deposited (CVD) graphene-based anticorrosive coatings able to provide long-term protection (i.e. several months) of metals have so far been absent. Here, we present a polymer-graphene......Despite numerous reports regarding the potential of graphene for corrosion protection, examples of chemical vapor deposited (CVD) graphene-based anticorrosive coatings able to provide long-term protection (i.e. several months) of metals have so far been absent. Here, we present a polymer......-graphene hybrid coating, comprising two single layers of CVD graphene sandwiched by three layers of polyvinyl butyral, which provides complete corrosion protection of commercial aluminum alloys even after 120 days of exposure to simulated seawater. The essential role played by graphene in the hybrid coating...

  2. Polysulfide intercalated layered double hydroxides for metal capture applications

    Energy Technology Data Exchange (ETDEWEB)

    Kanatzidis, Mercouri G.; Ma, Shulan

    2017-04-04

    Polysulfide intercalated layered double hydroxides and methods for their use in vapor and liquid-phase metal capture applications are provided. The layered double hydroxides comprise a plurality of positively charged host layers of mixed metal hydroxides separated by interlayer spaces. Polysulfide anions are intercalated in the interlayer spaces.

  3. Contained fissionly vaporized imploded fission explosive breeder reactor

    International Nuclear Information System (INIS)

    Marwick, E.F.

    1978-01-01

    Disclosed is a nuclear reactor system which produces useful thermal power and breeds fissile isotopes wherein large spherical complex slugs containing fissile and fertile isotopes as well as vaporizing and tamping materials are exploded seriatim in a large containing chamber having walls protected from the effects of the explosion by about two thousand tons of slurry of fissile and fertile isotopes in molten alkali metal. The slug which is slightly sub-critical prior to its entry into the centroid portion of the chamber, then becomes slightly more than prompt-critical because of the near proximity of neutron-reflecting atoms and of fissioning atoms within the slurry. The slurry is heated by explosion of the slugs and serves as a working fluid for extraction of heat energy from the reactor. Explosive debris is precipitated from the slurry and used for the fabrication of new slugs

  4. Nitrogen-doped graphene by microwave plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Kumar, A.; Voevodin, A.A.; Paul, R.; Altfeder, I.; Zemlyanov, D.; Zakharov, D.N.; Fisher, T.S.

    2013-01-01

    Rapid synthesis of nitrogen-doped, few-layer graphene films on Cu foil is achieved by microwave plasma chemical vapor deposition. The films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to 2 at.% are observed, and the limit is linked to the rigidity of graphene films on copper surfaces that impedes further nitrogen substitutions of carbon atoms. The entire growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films. - Highlights: ► Rapid synthesis of nitrogen doped few layer graphene on Cu foil. ► Defect density increment on 2% nitrogen doping. ► Nitrogen doped graphene is a good protection to the copper metallic surface

  5. Nitrogen-doped graphene by microwave plasma chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, A., E-mail: kumar50@purdue.edu [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Voevodin, A.A. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States); Paul, R. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Altfeder, I. [Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States); Zemlyanov, D.; Zakharov, D.N. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Fisher, T.S., E-mail: tsfisher@purdue.edu [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States)

    2013-01-01

    Rapid synthesis of nitrogen-doped, few-layer graphene films on Cu foil is achieved by microwave plasma chemical vapor deposition. The films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to 2 at.% are observed, and the limit is linked to the rigidity of graphene films on copper surfaces that impedes further nitrogen substitutions of carbon atoms. The entire growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films. - Highlights: ► Rapid synthesis of nitrogen doped few layer graphene on Cu foil. ► Defect density increment on 2% nitrogen doping. ► Nitrogen doped graphene is a good protection to the copper metallic surface.

  6. Chemical vapor deposition. Volume 2. 1975--July, 1978 (a bibliography with abstracts). Report for 1975--July 1978

    International Nuclear Information System (INIS)

    Smith, M.F.

    1978-07-01

    Research on chemical vapor deposition of carbon, carbides, ceramics, metals, and glasses are cited. Applications of this process include optical coatings, semiconducting films, laser materials, solar cells, composite fabrication, and nuclear reactor material fabrication. The physical, mechanical, and chemical properties of these coatings are covered

  7. Dipole-dipole interactions in a hot atomic vapor and in an ultracold gas of Rydberg atoms

    Science.gov (United States)

    Sautenkov, V. A.; Saakyan, S. A.; Bronin, S. Ya; Klyarfeld, A. B.; Zelener, B. B.; Zelener, B. V.

    2018-01-01

    In our paper ideal and non-ideal gas media of neutral atoms are analyzed. The first we discuss a dipole broadening of atomic transitions in excited dilute and dense metal vapors. Then the theoretical studies of the dipole-dipole interactions in dense ultracold gas of Rydberg atoms are considered. Possible future experiments on a base of our experimental arrangement are suggested.

  8. A Simple Experiment for Determining Vapor Pressure and Enthalpy of Vaporization of Water.

    Science.gov (United States)

    Levinson, Gerald S.

    1982-01-01

    Laboratory procedures, calculations, and sample results are described for a freshman chemistry experiment in which the Clausius-Clapeyron equation is introduced as a means of describing the variation of vapor pressure with temperature and for determining enthalpy of vaporization. (Author/SK)

  9. Vapor pressure and enthalpy of vaporization of oil of catnip by correlation gas chromatography

    International Nuclear Information System (INIS)

    Simmons, Daniel; Gobble, Chase; Chickos, James

    2016-01-01

    Highlights: • Vaporization enthalpies of the nepetalactones from oil of catnip have been evaluated. • Vapor pressures from T = (298.15 to 350) K have been evaluated. • Oil of catnip has a vapor pressure similar to DEET at T = 298.15 K. - Abstract: The vaporization enthalpy and vapor pressure of the two nepetalactones found in Nepeta cataria have been evaluated by correlation gas chromatography. Vaporization enthalpies at T = 298.15 K of {(68.0 ± 1.9) and (69.4 ± 1.9)} kJ ⋅ mol"−"1 have been derived for the minor diastereomer, (4aS,7S,7aS)-nepetalactone, and major one, (4aS,7S,7aR)-nepetalactone, respectively. Vapor pressures also at T = 298.15 K of p = (1.2 ± 0.04) Pa and (0.91 ± 0.03) Pa have been evaluated for the minor and the major stereoisomer. In addition to being of interest because of the remarkable effect it has on various felids, oil of catnip is also quite effective in repelling mosquitoes, comparable to diethyl-m-toluamide (DEET). The vapor pressures evaluated in this work suggest that the two stereoisomers have similar volatility to DEET at ambient temperatures.

  10. Vapor pressures and enthalpies of vaporization of a series of the linear aliphatic aldehydes

    Czech Academy of Sciences Publication Activity Database

    Verevkin, S. P.; Krasnykh, E. L.; Vasiltsova, T. V.; Koutek, Bohumír; Doubský, Jan; Heintz, A.

    2003-01-01

    Roč. 206, - (2003), s. 331-339 ISSN 0378-3812 Institutional research plan: CEZ:AV0Z4055905 Keywords : aldehydes * vapor pressure * enthalpy of vaporization Subject RIV: CC - Organic Chemistry Impact factor: 1.165, year: 2003

  11. Vapor pressures and vaporization enthalpy of codlemone by correlation gas chromatography

    International Nuclear Information System (INIS)

    Schultz, Shannon M.; Harris, Harold H.; Chickos, James S.

    2015-01-01

    Highlights: • The vaporization enthalpy of codlemone has been evaluated. • The vapor pressure of codlemone has been evaluated from T = (298.15 to T b ) K. • Vapor pressures for the 1-alkanols standards are available from T = (298.15 to 500) K. - Abstract: The vapor pressure and vaporization enthalpy of codlemone (trans, trans 8,10-dodecadien-1-ol), the female sex hormone of the codling moth is evaluated by correlation gas chromatography using a series of saturated primary alcohols as standards. A vaporization enthalpy of (92.3 ± 2.6) kJ · mol −1 and a vapor pressure, p/Pa = (0.083 ± 0.012) were evaluated at T = 298.15 K. An equation for the evaluation of vapor pressure from ambient temperature to boiling has been derived by correlation for codlemone. The calculated boiling temperature of T B = 389 K at p = 267 Pa is within the temperature range reported in the literature. A normal boiling temperature of T B = (549.1 ± 0.1) K is also estimated by extrapolation

  12. Evidence of a sewer vapor transport pathway at the USEPA vapor intrusion research duplex

    Science.gov (United States)

    The role of sewer lines as preferential pathways for vapor intrusion is poorly understood. Although the importance of sewer lines for volatile organic compound (VOC) transport has been documented at a small number of sites with vapor intrusion, sewer lines are not routinely sampl...

  13. Water vapor profiling using microwave radiometry

    Science.gov (United States)

    Wang, J. R.; Wilheit, T. T.

    1988-01-01

    Water vapor is one of the most important constituents in the Earth's atmosphere. Its spatial and temporal variations affect a wide spectrum of meteorological phenomena ranging from the formation of clouds to the development of severe storms. The passive microwave technique offers an excellent means for water vapor measurements. It can provide both day and night coverage under most cloud conditions. Two water vapor absorption features, at 22 and 183 GHz, were explored in the past years. The line strengths of these features differ by nearly two orders of magnitude. As a consequence, the techniques and the final products of water vapor measurements are also quite different. The research effort in the past few years was to improve and extend the retrieval algorithm to the measurements of water vapor profiles under cloudy conditions. In addition, the retrieval of total precipitable water using 183 GHz measurements, but in a manner analogous to the use of 22 GHz measurements, to increase measurement sensitivity for atmospheres of very low moisture content was also explored.

  14. Control of sodium vapor transport in annuli

    International Nuclear Information System (INIS)

    Meadows, G.E.; Bohringer, A.P.

    1983-11-01

    The method used to control sodium vapor transport in the annuli of various components at the Fast Flux Test Facility (FFTF) is a downward purge of the annuli with high purity argon. The purge rates for the FFTF were selected by calculating the gas velocity required to overcome thermal convection transport in the annuli. To evaluate the effectiveness of the gas purge, laboratory apparatus was fabricated which simulated selected annuli in the FFTF In-Vessel Handling Machine (IVHM) and the Instrument Tree (IT) annuli. Tests were conducted at temperatures similar to FFTF conditions. Gas purge rates ranged from zero to 130% of FFTF flow rates. Test results show the effectiveness of a high purity gas purge in decreasing the accumulation of sodium vapor deposits in an annulus. The presence of water vapor and oxygen in the purge gas increased the sodium deposition rate by a factor of three over other tests usig high purity argon. The presence of a vapor control collar used in the IT annulus was shown to be beneficial for controlling vapor transport into the upper region of the annulus

  15. Vapor pressure and thermodynamics of beryllium carbide

    International Nuclear Information System (INIS)

    Rinehart, G.H.; Behrens, R.G.

    1980-01-01

    The vapor pressure of beryllium carbide has been measured over the temperature range 1388 to 1763 K using Knudsen-effusion mass spectrometry. Vaporization occurs incongruently according to the reaction Be 2 C(s) = 2Be(g) + C(s). The equilibrium vapor pressure above the mixture of Be 2 C and C over the experimental temperature range is (R/J K -1 mol -1 )ln(p/Pa) = -(3.610 +- 0.009) x 10 5 (K/T) + (221.43 +- 1.06). The third-law enthalpy change for the above reaction obtained from the present vapor pressures is ΔH 0 (298.15 K) = (740.5 +- 0.1) kJ mol -1 . The corresponding second-law result is ΔH 0 (298.15 K) = (732.0 +- 1.8) kJ mol -1 . The enthalpy of formation for Be 2 C(s) calculated from the present third-law vaporization enthalpy and the enthalpy of formation of Be(g) is ΔH 0 sub(f)(298.15 K) = -(92.5 +- 15.7) kJ mol -1 . (author)

  16. Vapor pumps and gas-driven machines

    International Nuclear Information System (INIS)

    Guillet, R.

    1991-01-01

    The vapor pump, patented in 1979 by Gaz de France, is an additional mass and heat exchanger which uses the combustion air of fuel-burning machines as an additional cold source. This cold source is preheated and, above all, humidified before reaching the burner, by means of the residual sensible and latent heat in the combustion products of the fuel-burning process. This final exchanger thus makes it possible, in many cases, to recover all the gross calorific value of natural gas, even when the combustion products leave the process at a wet temperature greater than 60 0 C, the maximum dew point of the products of normal combustion. Another significant advantage of the vapor pump being worth highlighting is the selective recycling of water vapor by the vapor pump which reduces the adiabatic combustion temperature and the oxygen concentration in the combustion air, two factors which lead to considerable reductions in nitrogen oxides formation, hence limiting atmospheric pollution. Alongside a wide range of configurations which make advantageous use of the vapor pump in association with gas-driven machines and processes, including gas turbines, a number of boiler plant installations are also presented [fr

  17. Distribution of tropical tropospheric water vapor

    Science.gov (United States)

    Sun, De-Zheng; Lindzen, Richard S.

    1993-01-01

    Utilizing a conceptual model for tropical convection and observational data for water vapor, the maintenance of the vertical distribution of the tropical tropospheric water vapor is discussed. While deep convection induces large-scale subsidence that constrains the turbulent downgradient mixing to within the convective boundary layer and effectively dries the troposphere through downward advection, it also pumps hydrometeors into the upper troposphere, whose subsequent evaporation appears to be the major source of moisture for the large-scale subsiding motion. The development of upper-level clouds and precipitation from these clouds may also act to dry the outflow, thus explaining the low relative humidity near the tropopause. A one-dimensional model is developed to simulate the mean vertical structure of water vapor in the tropical troposphere. It is also shown that the horizontal variation of water vapor in the tropical troposphere above the trade-wind boundary layer can be explained by the variation of a moisture source that is proportional to the amount of upper-level clouds. Implications for the nature of water vapor feedback in global warming are discussed.

  18. Thermodynamics and Kinetics of Silicate Vaporization

    Science.gov (United States)

    Jacobson, Nathan S.; Costa, Gustavo C. C.

    2015-01-01

    Silicates are a common class of materials that are often exposed to high temperatures. The behavior of these materials needs to be understood for applications as high temperature coatings in material science as well as the constituents of lava for geological considerations. The vaporization behavior of these materials is an important aspect of their high temperature behavior and it also provides fundamental thermodynamic data. The application of Knudsen effusion mass spectrometry (KEMS) to silicates is discussed. There are several special considerations for silicates. The first is selection of an appropriate cell material, which is either nearly inert or has well-understood interactions with the silicate. The second consideration is proper measurement of the low vapor pressures. This can be circumvented by using a reducing agent to boost the vapor pressure without changing the solid composition or by working at very high temperatures. The third consideration deals with kinetic barriers to vaporization. The measurement of these barriers, as encompassed in a vaporization coefficient, is discussed. Current measured data of rare earth silicates for high temperature coating applications are discussed. In addition, data on magnesium-iron-silicates (olivine) are presented and discussed.

  19. Heavy metals

    OpenAIRE

    Adriano, Domy; VANGRONSVELD, Jaco; Bolan, N.S.; Wenzel, W.W.

    2005-01-01

    - Sources of Metals in the Environment - Environmental Contamination - Retention and Dynamics of Metals in Soils - Adsorption - Complexation - Precipitation - Bioavailability–Natural Attenuation Interactions - Biological Response to Metals - Soil Remediation

  20. A Numerical Investigation of Vapor Intrusion — the Dynamic Response of Contaminant Vapors to Rainfall Events

    Science.gov (United States)

    Shen, Rui; Pennell, Kelly G.; Suuberg, Eric M.

    2013-01-01

    The U.S. government and various agencies have published guidelines for field investigation of vapor intrusion, most of which suggest soil gas sampling as an integral part of the investigation. Contaminant soil gas data are often relatively more stable than indoor air vapor concentration measurements, but meteorological conditions might influence soil gas values. Although a few field and numerical studies have considered some temporal effects on soil gas vapor transport, a full explanation of the contaminant vapor concentration response to rainfall events is not available. This manuscript seeks to demonstrate the effects on soil vapor transport during and after different rainfall events, by applying a coupled numerical model of fluid flow and vapor transport. Both a single rainfall event and seasonal rainfall events were modeled. For the single rainfall event models, the vapor response process could be divided into three steps: namely, infiltration, water redistribution, and establishment of a water lens atop the groundwater source. In the infiltration step, rainfall intensity was found to determine the speed of the wetting front and wash-out effect on the vapor. The passage of the wetting front led to an increase of the vapor concentration in both the infiltration and water redistribution steps and this effect is noted at soil probes located 1 m below the ground surface. When the mixing of groundwater with infiltrated water was not allowed, a clean water lens accumulated above the groundwater source and led to a capping effect which can reduce diffusion rates of contaminant from the source. Seasonal rainfall with short time intervals involved superposition of the individual rainfall events. This modeling results indicated that for relatively deeper soil that the infiltration wetting front could not flood, the effects were damped out in less than a month after rain; while in the long term (years), possible formation of a water lens played a larger role in

  1. Analysis of nano-meter structure in Ti implanted polymers

    International Nuclear Information System (INIS)

    Zhou Gu; Wu Yuguang; Zhang Tonghe; Zhao Xinrong

    2001-01-01

    Polyethylene terephthalate (PET) is modified with Ti ion implantation to a dose of 1x10 17 to 2 x 10 17 cm -2 by using a metal vapor vacuum arc(MEVVA)source. Nano-meter structures in the implanted sample are observed by means of transmission electron microscope (TEM). The influence of ion dose on the structure is indicated. The results show that dense nano-meter phases are dispersed uniformly in the implanted layer. TEM cross section indicates that there is a three-layer structure in the implanted PET. It is found that a metallurgical surface is formed. Therefore the hardness, wear resistance and conductive properties of PET are improved after metal ion implantation. The mechanism of electrical conduction will be discussed

  2. Auxiliary Electrodes for Chromium Vapor Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Fergus, Jeffrey; Shahzad, Moaiz; Britt, Tommy

    2018-05-15

    Measurement of chromia-containing vapors in solid oxide fuel cell systems is useful for monitoring and addressing cell degradation caused by oxidation of the chomia scale formed on alloys for interconnects and balance-of-plant components. One approach to measuring chromium is to use a solid electrolyte with an auxiliary electrode that relates the partial pressure of the chromium containing species to the mobile species in the electrolyte. One example is YCrO3 which can equilibrate with the chromium containing vapor and yttrium in yttria stabilized zirconia to establish an oxygen activity. Another is Na2CrO4 which can equilibrate with the chromium-containing vapor to establish a sodium activity.

  3. Monolithic microwave integrated circuit water vapor radiometer

    Science.gov (United States)

    Sukamto, L. M.; Cooley, T. W.; Janssen, M. A.; Parks, G. S.

    1991-01-01

    A proof of concept Monolithic Microwave Integrated Circuit (MMIC) Water Vapor Radiometer (WVR) is under development at the Jet Propulsion Laboratory (JPL). WVR's are used to remotely sense water vapor and cloud liquid water in the atmosphere and are valuable for meteorological applications as well as for determination of signal path delays due to water vapor in the atmosphere. The high cost and large size of existing WVR instruments motivate the development of miniature MMIC WVR's, which have great potential for low cost mass production. The miniaturization of WVR components allows large scale deployment of WVR's for Earth environment and meteorological applications. Small WVR's can also result in improved thermal stability, resulting in improved calibration stability. Described here is the design and fabrication of a 31.4 GHz MMIC radiometer as one channel of a thermally stable WVR as a means of assessing MMIC technology feasibility.

  4. Numerical modeling of a vaporizing multicomponent droplet

    Science.gov (United States)

    Megaridis, C. M.; Sirignano, W. A.

    The fundamental processes governing the energy, mass, and momentum exchange between the liquid and gas phases of vaporizing, multicomponent liquid droplets have been investigated. The axisymmetric configuration under consideration consists of an isolated multicomponent droplet vaporizing in a convective environment. The model considers different volatilities of the liquid components, variable liquid properties due to variation of the species concentrations, and non-Fickian multicomponent gaseous diffusion. The bicomponent droplet model was employed to examine the commonly used assumptions of unity Lewis number in the liquid phase and Fickian gaseous diffusion. It is found that the droplet drag coefficients, the vaporization rates, and the related transfer numbers are not influenced by the above assumptions in a significant way.

  5. Secondhand Exposure to Vapors From Electronic Cigarettes

    Science.gov (United States)

    Czogala, Jan; Fidelus, Bartlomiej; Zielinska-Danch, Wioleta; Travers, Mark J.; Sobczak, Andrzej

    2014-01-01

    Introduction: Electronic cigarettes (e-cigarettes) are designed to generate inhalable nicotine aerosol (vapor). When an e-cigarette user takes a puff, the nicotine solution is heated and the vapor is taken into lungs. Although no sidestream vapor is generated between puffs, some of the mainstream vapor is exhaled by e-cigarette user. The aim of this study was to evaluate the secondhand exposure to nicotine and other tobacco-related toxicants from e-cigarettes. Materials and Methods: We measured selected airborne markers of secondhand exposure: nicotine, aerosol particles (PM2.5), carbon monoxide, and volatile organic compounds (VOCs) in an exposure chamber. We generated e-cigarette vapor from 3 various brands of e-cigarette using a smoking machine and controlled exposure conditions. We also compared secondhand exposure with e-cigarette vapor and tobacco smoke generated by 5 dual users. Results: The study showed that e-cigarettes are a source of secondhand exposure to nicotine but not to combustion toxicants. The air concentrations of nicotine emitted by various brands of e-cigarettes ranged from 0.82 to 6.23 µg/m3. The average concentration of nicotine resulting from smoking tobacco cigarettes was 10 times higher than from e-cigarettes (31.60±6.91 vs. 3.32±2.49 µg/m3, respectively; p = .0081). Conclusions: Using an e-cigarette in indoor environments may involuntarily expose nonusers to nicotine but not to toxic tobacco-specific combustion products. More research is needed to evaluate health consequences of secondhand exposure to nicotine, especially among vulnerable populations, including children, pregnant women, and people with cardiovascular conditions. PMID:24336346

  6. Vapor characterization of Tank 241-C-103

    International Nuclear Information System (INIS)

    Huckaby, J.L.; Story, M.S.

    1994-06-01

    The Westinghouse Hanford Company Tank Vapor Issue Resolution Program has developed, in cooperation with Northwest Instrument Systems, Inc., Oak Ridge National Laboratory, Oregon Graduate Institute of Science and Technology, Pacific Northwest Laboratory, and Sandia National Laboratory, the equipment and expertise to characterize gases and vapors in the high-level radioactive waste storage tanks at the Hanford Site in south central Washington State. This capability has been demonstrated by the characterization of the tank 241-C-103 headspace. This tank headspace is the first, and for many reasons is expected to be the most problematic, that will be characterized (Osborne 1992). Results from the most recent and comprehensive sampling event, sample job 7B, are presented for the purpose of providing scientific bases for resolution of vapor issues associated with tank 241-C-103. This report is based on the work of Clauss et al. 1994, Jenkins et al. 1994, Ligotke et al. 1994, Mahon et al. 1994, and Rasmussen and Einfeld 1994. No attempt has been made in this report to evaluate the implications of the data presented, such as the potential impact of headspace gases and vapors to tank farm workers health. That and other issues will be addressed elsewhere. Key to the resolution of worker health issues is the quantitation of compounds of toxicological concern. The Toxicology Review Panel, a panel of Pacific Northwest Laboratory experts in various areas, of toxicology, has chosen 19 previously identified compounds as being of potential toxicological concern. During sample job 7B, the sampling and analytical methodology was validated for this preliminary list of compounds of toxicological concern. Validation was performed according to guidance provided by the Tank Vapor Conference Committee, a group of analytical chemists from academic institutions and national laboratories assembled and commissioned by the Tank Vapor Issue Resolution Program

  7. Vapor characterization of Tank 241-C-103

    Energy Technology Data Exchange (ETDEWEB)

    Huckaby, J.L. [Westinghouse Hanford Co., Richland, WA (United States); Story, M.S. [Northwest Instrument Systems, Inc. Richland, WA (United States)

    1994-06-01

    The Westinghouse Hanford Company Tank Vapor Issue Resolution Program has developed, in cooperation with Northwest Instrument Systems, Inc., Oak Ridge National Laboratory, Oregon Graduate Institute of Science and Technology, Pacific Northwest Laboratory, and Sandia National Laboratory, the equipment and expertise to characterize gases and vapors in the high-level radioactive waste storage tanks at the Hanford Site in south central Washington State. This capability has been demonstrated by the characterization of the tank 241-C-103 headspace. This tank headspace is the first, and for many reasons is expected to be the most problematic, that will be characterized (Osborne 1992). Results from the most recent and comprehensive sampling event, sample job 7B, are presented for the purpose of providing scientific bases for resolution of vapor issues associated with tank 241-C-103. This report is based on the work of Clauss et al. 1994, Jenkins et al. 1994, Ligotke et al. 1994, Mahon et al. 1994, and Rasmussen and Einfeld 1994. No attempt has been made in this report to evaluate the implications of the data presented, such as the potential impact of headspace gases and vapors to tank farm workers health. That and other issues will be addressed elsewhere. Key to the resolution of worker health issues is the quantitation of compounds of toxicological concern. The Toxicology Review Panel, a panel of Pacific Northwest Laboratory experts in various areas, of toxicology, has chosen 19 previously identified compounds as being of potential toxicological concern. During sample job 7B, the sampling and analytical methodology was validated for this preliminary list of compounds of toxicological concern. Validation was performed according to guidance provided by the Tank Vapor Conference Committee, a group of analytical chemists from academic institutions and national laboratories assembled and commissioned by the Tank Vapor Issue Resolution Program.

  8. Vacuum distillation/vapor filtration water recovery

    Science.gov (United States)

    Honegger, R. J.; Neveril, R. B.; Remus, G. A.

    1974-01-01

    The development and evaluation of a vacuum distillation/vapor filtration (VD/VF) water recovery system are considered. As a functional model, the system converts urine and condensates waste water from six men to potable water on a steady-state basis. The system is designed for 180-day operating durations and for function on the ground, on zero-g aircraft, and in orbit. Preparatory tasks are summarized for conducting low gravity tests of a vacuum distillation/vapor filtration system for recovering water from urine.

  9. Detection of water vapor on Jupiter

    Science.gov (United States)

    Larson, H. P.; Fink, U.; Treffers, R.; Gautier, T. N., III

    1975-01-01

    High-altitude (12.4 km) spectroscopic observations of Jupiter at 5 microns from the NASA 91.5 cm airborne infrared telescope have revealed 14 absorptions assigned to the rotation-vibration spectrum of water vapor. Preliminary analysis indicates a mixing ratio about 1 millionth for the vapor phase of water. Estimates of temperature (greater than about 300 K) and pressure (less than 20 atm) suggest observation of water deep in Jupiter's hot spots responsible for its 5 micron flux. Model-atmosphere calculations based on radiative-transfer theory may change these initial estimates and provide a better physical picture of Jupiter's atmosphere below the visible cloud tops.

  10. Vapor deposition in basaltic stalactites, Kilauea, Hawaii

    Science.gov (United States)

    Baird, A. K.; Mohrig, D. C.; Welday, E. E.

    Basaltic stalacties suspended from the ceiling of a large lava tube at Kilauea, Hawaii, have totally enclosed vesicles whose walls are covered with euhedral FeTi oxide and silicate crystals. The walls of the vesicles and the exterior surfaces of stalactites are Fe and Ti enriched and Si depleted compared to common basalt. Minerals in vesicles have surface ornamentations on crystal faces which include alkali-enriched, aluminosilicate glass(?) hemispheres. No sulfide-, chloride-, fluoride-, phosphate- or carbonate-bearing minerals are present. Minerals in the stalactites must have formed by deposition from an iron oxide-rich vapor phase produced by the partial melting and vaporization of wall rocks in the tube.

  11. Flammability characteristics of combustible gases and vapors

    Energy Technology Data Exchange (ETDEWEB)

    Zabetakis, M. G. [Bureau of Mines, Pittsburgh, PA (United States)

    1964-05-01

    This is a summary of the available limit of flammability, autoignition and burning-rate data for more than 200 combustible gases and vapors in air and other oxidants, as well as of empirical rules and graphs that can be used to predict similar data for thousands of other combustibles under a variety of environmental conditions. Spec$c data are presented on the paraffinic, unsaturated, aromatic, and alicyclic hydrocarbons, alcohols, ethers, aldehydes, ketones, and sulfur compounds, and an assortment of fuels, fuel blends, hydraulic fluids, engine oils, and miscellaneous combustible gases and vapors.

  12. Laser vapor phase deposition of semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Karlov, N.V.; Luk' ianchuk, B.S.; Sisakian, E.V.; Shafeev, G.A.

    1987-06-01

    The pyrolytic effect of IR laser radiation is investigated with reference to the initiation and control of the vapor phase deposition of semiconductor films. By selecting the gas mixture composition and laser emission parameters, it is possible to control the deposition and crystal formation processes on the surface of semiconductors, with the main control action achieved due to the nonadiabatic kinetics of reactions in the gas phase and high temperatures in the laser heating zone. This control mechanism is demonstrated experimentally during the laser vapor deposition of germanium and silicon films from tetrachlorides on single-crystal Si and Ge substrates. 5 references.

  13. The vertical distribution of Mars water vapor

    Science.gov (United States)

    Davies, D. W.

    1979-01-01

    Analysis of observations made from the Viking 1 Orbiter indicates that the water vapor over the Viking 1 landing site is uniformly mixed with the atmosphere and not concentrated near the surface. The analysis incorporates the effects of atmospheric scattering and explains why previous earth-based observations showed a strong diurnal variation in water content. It also explains the lack of an early morning fog and removes the necessity of daily exchange of large amounts of water between the surface and the atmosphere. A water vapor volume mixing ratio of 1.5 x 10 to the -4th is inferred for the Viking 1 site in late summer.

  14. Drag Reduction by Leidenfrost Vapor Layers

    KAUST Repository

    Vakarelski, Ivan Uriev

    2011-05-23

    We demonstrate and quantify a highly effective drag reduction technique that exploits the Leidenfrost effect to create a continuous and robust lubricating vapor layer on the surface of a heated solid sphere moving in a liquid. Using high-speed video, we show that such vapor layers can reduce the hydrodynamic drag by over 85%. These results appear to approach the ultimate limit of drag reduction possible by different methods based on gas-layer lubrication and can stimulate the development of related energy saving technologies.

  15. Separation of aromatics by vapor permeation through solvent swollen membrane

    Energy Technology Data Exchange (ETDEWEB)

    Ito, A.; Adachi, K.; Feng, Y. [Niigata University, Niigata (Japan)

    1995-12-20

    A vapor permeation process for aromatics separation from a hydrocarbon mixture was studied by means of the simultaneous permeation of dimethylsulfoxide vapor as an agent for membrane swelling and preferential permeation of aromatics. The separation performance of the process was demonstrated by a polyvinylalcohol membrane for mixed vapors of benzene/cyclohexane, xylene/octane and a model gasoline. The aromatic vapors preferentially permeated from these mixed vapor feeds. The separation factor was over 10. The separation mechanism of the process mainly depends on the relative salability of the vapors between aromatics and other hydrocarbons in dimethylsulfoxide. 14 refs., 9 figs., 1 tab.

  16. Vaporization study on vanadium monoxide and two-phase mixture of vanadium and vanadium monoxide by mass-spectrometric method

    International Nuclear Information System (INIS)

    Banchorndhevakul, W.; Matsui, Tsuneo; Naito, Keiji

    1986-01-01

    The vapor pressures over single phase vanadium monoxide VO 1.022 (s) and the two-phase mixture of vanadium metal (β phase) and vanadium monoxide were measured by mass-spectrometric method in the temperature range of 1,803 ∼ 1,990 and 1,703 ∼ 1,884 K, respectively. The main gas species over both systems were found to be VO(g) and V(g). The vapor pressure of VO(g) over the two-phase mixture of V(s) and VO(s) was a little lower than that over single phase VO(s). The vapor pressure of V(g) over the two-phase mixture was nearly equal to that over single phase. From the vapor pressure data, the enthalpies of vaporization, the enthalpies of formation for VO(g) and V(g) and the dissociation energy of VO(g) were determined. The oxygen partial pressure was calculated as a function of temperature from the vapor pressures of VO(g) and V(g), from which the partial molar enthalpies and entropies of oxygen in both systems were obtained. (author)

  17. 40 CFR Appendix C to Part 438 - Metal-Bearing Operations Definitions

    Science.gov (United States)

    2010-07-01

    ... is rotated in a drum containing a water-based solution, glass beads, and metal powder. In vapor... interference shielding; thermal barriers for rocket engines; nuclear moderators; films for hot isostatic...

  18. Knudsen cell vaporization of rare earth nitrides: enthalpy of vaporization of HoN098

    International Nuclear Information System (INIS)

    Brown, R.C.; Clark, N.J.

    1975-01-01

    The enthalpy of vaporization of HoN 0 . 98 was measured by the weight-loss Knudsen cell technique using Motzfeldt-Whitman extrapolations to zero orifice area. A third-law enthalpy of vaporization of HoN 0 . 98 of 155.9 +- 5 kcal mole -1 was obtained compared to a second-law value of 162.0 +- 5 kcal mole -1 . Similar measurements on the nitrides of samarium, erbium, and ytterbium gave third-law enthalpies of vaporization of 126.8 +-- 5 kcal mole -1 ; 159.6 +- 5 kcal mole -1 , and 121.0 +- 5 kcal mole -1 , respectively. 7 tables

  19. Nanostructure Engineered Chemical Sensors for Hazardous Gas and Vapor Detection

    Science.gov (United States)

    Li, Jing; Lu, Yijiang

    2005-01-01

    A nanosensor technology has been developed using nanostructures, such as single walled carbon nanotubes (SWNTs) and metal oxides nanowires or nanobelts, on a pair of interdigitated electrodes (IDE) processed with a silicon based microfabrication and micromachining technique. The IDE fingers were fabricated using thin film metallization techniques. Both in-situ growth of nanostructure materials and casting of the nanostructure dispersions were used to make chemical sensing devices. These sensors have been exposed to hazardous gases and vapors, such as acetone, benzene, chlorine, and ammonia in the concentration range of ppm to ppb at room temperature. The electronic molecular sensing in our sensor platform can be understood by electron modulation between the nanostructure engineered device and gas molecules. As a result of the electron modulation, the conductance of nanodevice will change. Due to the large surface area, low surface energy barrier and high thermal and mechanical stability, nanostructured chemical sensors potentially can offer higher sensitivity, lower power consumption and better robustness than the state-of-the-art systems, which make them more attractive for defense and space applications. Combined with MEMS technology, light weight and compact size sensors can be made in wafer scale with low cost.

  20. Solvent-vapor-assisted imprint lithography

    NARCIS (Netherlands)

    Voicu, Nicoleta E.; Ludwigs, Sabine; Crossland, Edward J. W.; Andrew, Piers; Steiner, Ullrich

    2007-01-01

    Sub-micrometer features are replicated into high-molecular-weight polymer resists by using solvent-assisted nanoimprint lithography (see figure). By swelling the polymer in a controlled solvent-vapor atmosphere, millibar pressures and ambient temperatures are sufficient to achieve high-fidelity

  1. General well function for soil vapor extraction

    Science.gov (United States)

    Perina, Tomas

    2014-04-01

    This paper develops a well function applicable to extraction of groundwater or soil vapor from a well under the most common field test conditions. The general well function (Perina and Lee, 2006) [12] is adapted to soil vapor extraction and constant head boundary at the top. For groundwater flow, the general well function now applies to an extraction well of finite diameter with uniform drawdown along the screen, finite-thickness skin, and partially penetrating an unconfined, confined, and leaky aquifer, or an aquifer underneath a reservoir. With a change of arguments, the model applies to soil vapor extraction from a vadose zone with no cover or with leaky cover at the ground surface. The extraction well can operate in specified drawdown (pressure for soil vapor) or specified flowrate mode. Frictional well loss is computed as flow-only dependent component of the drawdown inside the extraction well. In general case, the calculated flow distribution is not proportional to screen length for a multiscreen well.

  2. Atomic lithium vapor laser isotope separation

    CERN Document Server

    Olivares, I E

    2002-01-01

    An atomic vapor laser isotope separation in lithium was performed using tunable diode lasers. The method permits also the separation of the isotopes between the sup 6 LiD sub 2 and the sup 7 LiD sub 1 lines using a self-made mass separator which includes a magnetic sector and an ion beam designed for lithium. (Author)

  3. Atomic lithium vapor laser isotope separation

    International Nuclear Information System (INIS)

    Olivares, I.E.; Rojas, C.

    2002-01-01

    An atomic vapor laser isotope separation in lithium was performed using tunable diode lasers. The method permits also the separation of the isotopes between the 6 LiD 2 and the 7 LiD 1 lines using a self-made mass separator which includes a magnetic sector and an ion beam designed for lithium. (Author)

  4. Resonant second harmonic generation in potassium vapor

    International Nuclear Information System (INIS)

    Kim, D.; Mullin, C.S.; Shen, Y.R.; Lawrence Berkeley Lab., CA

    1995-06-01

    Picosecond pulses are used to study resonant second harmonic generation in potassium vapor. Although the process is both microscopically and macroscopically forbidden, it can readily be observed. The results can be quantitatively understood by a multiphoton-ionization-initiated, dc-field-induced, coherent transient model

  5. Vapor Bubbles in Flow and Acoustic Fields

    NARCIS (Netherlands)

    Prosperetti, Andrea; Hao, Yue; Sadhal, S.S

    2002-01-01

    A review of several aspects of the interaction of bubbles with acoustic and flow fields is presented. The focus of the paper is on bubbles in hot liquids, in which the bubble contains mostly vapor, with little or no permanent gas. The topics covered include the effect of translation on condensation

  6. A FGGE water vapor wind data set

    Science.gov (United States)

    Stewart, Tod R.; Hayden, Christopher M.

    1985-01-01

    It has been recognized for some time that water vapor structure visible in infrared imagery offers a potential for obtaining motion vectors when several images are considered in sequence (Fischer et al., 1981). A study evaluating water vapor winds obtained from the VISSR atmospheric sounder (Stewart et al., 1985) has confirmed the viability of the approach. More recently, 20 data sets have been produced from METEOSAT water vapor imagery for the FGGE period of 10-25 November 1979. Where possible, two data sets were prepared for each day at 0000 and 1200 GMT and compared with rawinsondes over Europe, Africa, and aircraft observations over the oceans. Procedures for obtaining winds were, in general, similar to the earlier study. Motions were detected both by a single pixel tracking and a cross correlation method by using three images individually separated by one hour. A height assignment was determined by matching the measured brightness temperature to the temperature structure represented by the FGGE-IIIB analyses. Results show that the METEOSAT water vapor winds provide uniform horizontal coverage of mid-level flow over the globe with good accuracy.

  7. External fuel vaporization study, phase 2

    Science.gov (United States)

    Szetela, E. J.; Chiappetta, L.

    1981-01-01

    An analytical study was conducted to evaluate the effect of variations in fuel properties on the design of an external fuel vaporizaton system. The fuel properties that were considered included thermal stability, critical temperature, enthalpy a critical conditions, volatility, and viscosity. The design parameters that were evaluated included vaporizer weight and the impact on engine requirement such as maintenance, transient response, performance, and altitude relight. The baseline fuel properties were those of Jet A. The variation in thermal stability was taken as the thermal stability variation for Experimental Referee Broad Specification (ERBS) fuel. The results of the analysis indicate that a change in thermal stability equivalent to that of ERBS would increase the vaporization system weight by 20 percent, decrease oprating time between cleaning by 40 percent and make altitude relight more difficult. An increase in fuel critical temperature of 39 K would require a 40 percent increase in vaporization system weight. The assumed increase in enthalpy and volatility would also increase vaporizer weight by 40 percent and make altitude relight extremely difficult. The variation in fuel viscosity would have a negligible effect on the design parameters.

  8. Atomic-vapor-laser isotope separation

    International Nuclear Information System (INIS)

    Davis, J.I.

    1982-10-01

    This paper gives a brief history of the scientific considerations leading to the development of laser isotope separation (LIS) processes. The close relationship of LIS to the broader field of laser-induced chemical processes is evaluated in terms of physical criteria to achieve an efficient production process. Atomic-vapor LIS processes under development at Livermore are reviwed. 8 figures

  9. Fractional condensation of biomass pyrolysis vapors

    NARCIS (Netherlands)

    Westerhof, Roel Johannes Maria; Brilman, Derk Willem Frederik; Garcia Perez, M.; Wang, Zhouhong; Oudenhoven, Stijn; van Swaaij, Willibrordus Petrus Maria; Kersten, Sascha R.A.

    2011-01-01

    In this paper, we have investigated the possibilities to steer the composition and, thus, the quality of pyrolysis liquids by the reactor temperature and the pyrolysis vapor condenser temperature. Pine wood was pyrolyzed in a 1 kg/h fluidized-bed pyrolysis reactor operated at 330 or 480 °C. The

  10. 75 FR 65151 - Marine Vapor Control Systems

    Science.gov (United States)

    2010-10-21

    ... Classification UFL Upper flammable limit USCG U.S. Coast Guard VCS Vapor control system VOC Volatile organic... transfer substance to new Subpart P, beginning with 33 CFR 154.2000, to facilitate the substantive changes... that guidance. Limit requirements for flame arresters or flame screens to the flammable, combustible...

  11. Covering sources of toxic vapors with foam

    International Nuclear Information System (INIS)

    Aue, W. P.; Guidetti, F.

    2009-01-01

    In a case of chemical terrorism, first responders might well be confronted with a liquid source of toxic vapor which keeps spreading out its hazardous contents. With foam as an efficient and simple means, such a source could be covered up in seconds and the spread of vapors mitigated drastically. Once covered, the source could then wait for a longer time to be removed carefully and professionally by a decontamination team. In order to find foams useful for covering up toxic vapor sources, a large set of measurements has been performed in order to answer the following questions: - Which foams could be used for this purpose? - How thick should the foam cover be? - For how long would such a foam cover be effective? - Could the practical application of foam cause a spread of the toxic chemical? The toxic vapors sources included GB, GD and HD. Among the foams were 10 fire fighter foams (e.g. AFFF, protein) and the aqueous decontamination foam CASCAD. Small scale experiments showed that CASCAD is best suited for covering a toxic source; a 10 cm layer of it covers and decontaminates GB. The large scale experiments confirmed that any fire fighter foam is a suitable cover for a longer or shorter period.(author)

  12. Similarities and differences in vapor explosion criteria

    International Nuclear Information System (INIS)

    Cronenberg, A.W.

    1978-01-01

    An overview of recent ideas pertaining to vapor explosion criteria indicates that in general sense, a consensus of opinion is emerging on the conditions applicable to explosive vaporization. Experimental and theoretical work has lead a number of investigators to the formulation of such conditions which are quite similar in many respects, although the quantitative details of the model formulation of such conditions are somewhat different. All model concepts are consistent in that an initial period of stable film boiling, separating molten fuel from coolant, is considered necessary (at least for large-scale interactions and efficient intermixing), with subsequent breakdown of film boiling due to pressure and/or thermal effects, followed by intimate fuel-coolant contact and a rapid vaporization process which is sufficient to cause shock pressurization. Although differences arise as to the conditions for and the energetics associated with film boiling destabilization and the mode and energetics of fragmentation and intermixing. However, the principal area of difference seems to be the question of what constitutes the requisite condition(s) for rapid vapor production to cause shock pressurization

  13. HYDROCARBON VAPOR DIFFUSION IN INTACT CORE SLEEVES

    Science.gov (United States)

    The diffusion of 2,2,4-trimethylpentane (TMP) and 2,2,5-trimethylhexane (TMH) vapors put of residually contaminated sandy soil from the U.S. Environmental Protection Agency (EPA) field research site at Traverse City, Michigan, was measured and modeled. The headspace of an intact ...

  14. Multicomponent droplet vaporization in a convecting environment

    International Nuclear Information System (INIS)

    Megaridis, C.M.; Sirignano, W.A.

    1990-01-01

    In this paper a parametric study of the fundamental exchange processes for energy, mass and momentum between the liquid and gas phases of multicomponent liquid vaporizing droplets is presented. The model, which examines an isolated, vaporizing, multicomponent droplet in an axisymmetric, convecting environment, considers the different volatilities of the liquid components, the alteration of the liquid-phase properties due to the spatial/temporal variations of the species concentrations and also the effects of multicomponent diffusion. In addition, the model accounts for variable thermophysical properties, surface blowing and droplet surface regression due to vaporization, transient droplet heating with internal liquid circulation, and finally droplet deceleration with respect to the free flow due to drag. The numerical calculation employs finite-difference techniques and an iterative solution procedure that provides time-varying spatially-resolved data for both phases. The effects of initial droplet composition, ambient temperature, initial Reynolds number (based on droplet diameter), and volatility differential between the two liquid components are investigated for a liquid droplet consisting of two components with very different volatilities. It is found that mixtures with higher concentration of the less volatile substance actually vaporize faster on account of intrinsically higher liquid heating rates

  15. Terahertz radiation in alkali vapor plasmas

    International Nuclear Information System (INIS)

    Sun, Xuan; Zhang, X.-C.

    2014-01-01

    By taking advantage of low ionization potentials of alkali atoms, we demonstrate terahertz wave generation from cesium and rubidium vapor plasmas with an amplitude nearly one order of magnitude larger than that from nitrogen gas at low pressure (0.02–0.5 Torr). The observed phenomena are explained by the numerical modeling based upon electron tunneling ionization

  16. Vapor pressure of selected organic iodides

    Czech Academy of Sciences Publication Activity Database

    Fulem, M.; Růžička, K.; Morávek, P.; Pangrác, Jiří; Hulicius, Eduard; Kozyrkin, B.; Shatunov, V.

    2010-01-01

    Roč. 55, č. 11 (2010), 4780-4784 ISSN 0021-9568 R&D Projects: GA ČR GA203/08/0217 Institutional research plan: CEZ:AV0Z10100521 Keywords : vapor pressure * static method * organic iodides Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.089, year : 2010

  17. A high selective cataluminescence sensor for the determination of tetrahydrofuran vapor

    Science.gov (United States)

    Cao, Xiaoan; Dai, Huimei; Chen, Suilin; Zeng, Jiayi; Zhang, Keke; Sun, Yan

    2013-02-01

    A novel tetrahydrofuran (THF) vapor sensor was designed based on the cataluminescence (CTL) of THF on nanosized γ-Al2O3/MgO (mol ratio = 1.5:1). SEM and XRD were applied for its characterization. We found that the CTL was strongly produced when THF vapor flowed through a nanosized Al-Mg mixed-metal oxide surface, while the CTL was weakly generated when THF vapor flowed through a single nanosized γ-Al2O3 or MgO surface. Quantitative analysis was performed at an optimal temperature of 279 °C, a wavelength of 460 nm and a flow rate of 360 mL min-1. The linear range of the CTL intensity versus concentrations of THF vapor was 1.0-3000 mL m-3 with a detection limit of 0.67 mL m-3. No (or only very low) interference was observed by formaldehyde, methanol, ethanol, benzene, toluene, ethyl acetate, ammonia, cyclohexane, chloroform, glycol armour ether, glycol ether, isopropyl ether and n-butyl ether or acetic acid. Since the response of the sensor was rapid and the system was easy to handle, we believe that the sensor has great potential for real-world use.

  18. Atmospheric pressure plasma enhanced chemical vapor deposition of zinc oxide and aluminum zinc oxide

    International Nuclear Information System (INIS)

    Johnson, Kyle W.; Guruvenket, Srinivasan; Sailer, Robert A.; Ahrenkiel, S. Phillip; Schulz, Douglas L.

    2013-01-01

    Zinc oxide (ZnO) and aluminum-doped zinc oxide (AZO) thin films were deposited via atmospheric pressure plasma enhanced chemical vapor deposition. A second-generation precursor, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)(N,N′-diethylethylenediamine) zinc, exhibited significant vapor pressure and good stability at one atmosphere where a vaporization temperature of 110 °C gave flux ∼ 7 μmol/min. Auger electron spectroscopy confirmed that addition of H 2 O to the carrier gas stream mitigated F contamination giving nearly 1:1 metal:oxide stoichiometries for both ZnO and AZO with little precursor-derived C contamination. ZnO and AZO thin film resistivities ranged from 14 to 28 Ω·cm for the former and 1.1 to 2.7 Ω·cm for the latter. - Highlights: • A second generation precursor was utilized for atmospheric pressure film growth. • Addition of water vapor to the carrier gas stream led to a marked reduction of ZnF 2 . • Carbonaceous contamination from the precursor was minimal

  19. Vaporization of fault water during seismic slip

    Science.gov (United States)

    Chen, Jianye; Niemeijer, André R.; Fokker, Peter A.

    2017-06-01

    Laboratory and numerical studies, as well as field observations, indicate that phase transitions of pore water might be an important process in large earthquakes. We present a model of the thermo-hydro-chemo-mechanical processes, including a two-phase mixture model to incorporate the phase transitions of pore water, occurring during fast slip (i.e., a natural earthquake) in order to investigate the effects of vaporization on the coseismic slip. Using parameters from typical natural faults, our modeling shows that vaporization can indeed occur at the shallow depths of an earthquake, irrespective of the wide variability of the parameters involved (sliding velocity, friction coefficient, gouge permeability and porosity, and shear-induced dilatancy). Due to the fast kinetics, water vaporization can cause a rapid slip weakening even when the hydrological conditions of the fault zone are not favorable for thermal pressurization, e.g., when permeability is high. At the same time, the latent heat associated with the phase transition causes the temperature rise in the slip zone to be buffered. Our parametric analyses reveal that the amount of frictional work is the principal factor controlling the onset and activity of vaporization and that it can easily be achieved in earthquakes. Our study shows that coseismic pore fluid vaporization might have played important roles at shallow depths of large earthquakes by enhancing slip weakening and buffering the temperature rise. The combined effects may provide an alternative explanation for the fact that low-temperature anomalies were measured in the slip zones at shallow depths of large earthquakes.

  20. The vapor pressure and enthalpy of vaporization of M-xylene

    Energy Technology Data Exchange (ETDEWEB)

    Rothenberg, S J; Seiler, F A; Bechtold, W E; Eidson, A F

    1988-12-01

    We measured the vapor pressure of m-xylene over the temperature range 273 to 293 deg K with a single-sided capacitance manometer. The enthalpy of vaporization was 42.2 {+-} 0.1 (SE) kj/ g{center_dot}mol. Combining our own data with previously published data, we recommend using the values 42.0, 40.6, and 39.1 ({+-} 0.1) (SE) kjg{center_dot}mol for the enthalpy of vaporization of m-xylene at 300, 340, and 380 deg. K, respectively, and a value for the change in heat capacity on vaporization ({delta}Cpdeg.) of 35 {+-} 3 (SE) J/g{center_dot}mol{center_dot}K over the temperature range studied. (author)

  1. The vapor pressure and enthalpy of vaporization of M-xylene

    International Nuclear Information System (INIS)

    Rothenberg, S.J.; Seiler, F.A.; Bechtold, W.E.; Eidson, A.F.

    1988-01-01

    We measured the vapor pressure of m-xylene over the temperature range 273 to 293 deg K with a single-sided capacitance manometer. The enthalpy of vaporization was 42.2 ± 0.1 (SE) kj/ g·mol. Combining our own data with previously published data, we recommend using the values 42.0, 40.6, and 39.1 (± 0.1) (SE) kjg·mol for the enthalpy of vaporization of m-xylene at 300, 340, and 380 deg. K, respectively, and a value for the change in heat capacity on vaporization (ΔCpdeg.) of 35 ± 3 (SE) J/g·mol·K over the temperature range studied. (author)

  2. 46 CFR 182.480 - Flammable vapor detection systems.

    Science.gov (United States)

    2010-10-01

    ... 100 GROSS TONS) MACHINERY INSTALLATION Specific Machinery Requirements § 182.480 Flammable vapor... permit calibration in a vapor free atmosphere. (g) Electrical connections, wiring, and components for a...

  3. Ammonia IR Absorbance Measurements with an Equilibrium Vapor Cell

    National Research Council Canada - National Science Library

    Field, Paul

    2004-01-01

    Infrared (IR) absorbance spectra were acquired for 18 ammonia vapor pressures. The vapor pressures were generated with 15 gravimetrically prepared aqueous solutions and three commercial aqueous solutions using a dynamic method I.E...

  4. Water vapor movement in freezing aggregate base materials.

    Science.gov (United States)

    2014-06-01

    The objectives of this research were to 1) measure the extent to which water vapor movement results in : water accumulation in freezing base materials; 2) evaluate the effect of soil stabilization on water vapor movement : in freezing base materials;...

  5. Bionanomaterials and Bioinspired Nanostructures for Selective Vapor Sensing

    Science.gov (United States)

    2013-04-03

    agricultural crops. To meet the requirements for these and other demanding applications, new sensing approaches with improved sensor selectivity are required...of these vapors with key side- chain amino acids. DNT-binding peptide receptors were further conjugated to an oligo(ethylene glycol) hydrogel for vapor...coefficient for DNT over TNT vapor. Vapor-phase binding performance was attributed to the ability of the oligo(ethylene glycol) hydrogel to maintain the

  6. The effect of atoms excited by electron beam on metal evaporation

    CERN Document Server

    Xie Guo Feng; Ying Chun Tong

    2002-01-01

    In atomic vapor laser isotope separation (AVLIS), the metal is heated to melt by electron beams. The vapor atoms may be excited by electrons when flying through the electron beam. The excited atoms may be deexcited by inelastic collision during expansion. The electronic energy transfers translational energy. In order to analyse the effect of reaction between atoms and electron beams on vapor physical parameters, such as density, velocity and temperature, direct-simulation Monte Carlo method (DSMC) is used to simulate the 2-D gadolinium evaporation from long and narrow crucible. The simulation results show that the velocity and temperature of vapor increase, and the density decreases

  7. Liquid metal cooling of synchrotron optics

    International Nuclear Information System (INIS)

    Smither, R.K.

    1993-01-01

    The installation of insertion devices at existing synchrotron facilities around the world has stimulated the development of new ways to cool the optical elements in the associated x-ray beamlines. Argonne has been a leader in the development of liquid metal cooling for high heat load x-ray optics for the next generation of synchrotron facilities. The high thermal conductivity, high volume specific heat, low kinematic viscosity, and large working temperature range make liquid metals a very efficient heat transfer fluid. A wide range of liquid metals were considered in the initial phase of this work. The most promising liquid metal cooling fluid identified to date is liquid gallium, which appears to have all the desired properties and the fewest number of undesired features of the liquid metals examined. Besides the special features of liquid metals that make them good heat transfer fluids, the very low vapor pressure over a large working temperature range make liquid gallium an ideal cooling fluid for use in a high vacuum environment. A leak of the liquid gallium into the high vacuum and even into very high vacuum areas will not result in any detectable vapor pressure and may even improve the vacuum environment as the liquid gallium combines with any water vapor or oxygen present in the system. The practical use of a liquid metal for cooling silicon crystals and other high heat load applications depends on having a convenient and efficient delivery system. The requirements for a typical cooling system for a silicon crystal used in a monochromator are pumping speeds of 2 to 5 gpm (120 cc per sec to 600 cc per sec) at pressures up to 100 psi. No liquid metal pump with these capabilities was available commercially when this project was started, so it was necessary to develop a suitable pump in house

  8. Rapid and highly efficient growth of graphene on copper by chemical vapor deposition of ethanol

    Energy Technology Data Exchange (ETDEWEB)

    Lisi, Nicola, E-mail: nicola.lisi@enea.it [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Buonocore, Francesco; Dikonimos, Theodoros; Leoni, Enrico [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Faggio, Giuliana; Messina, Giacomo [Dipartimento di Ingegneria dell' Informazione, delle Infrastrutture e dell' Energia Sostenibile (DIIES), Università “Mediterranea” di Reggio Calabria, 89122 Reggio Calabria (Italy); Morandi, Vittorio; Ortolani, Luca [CNR-IMM Bologna, Via Gobetti 101, 40129 Bologna (Italy); Capasso, Andrea [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy)

    2014-11-28

    The growth of graphene by chemical vapor deposition on metal foils is a promising technique to deliver large-area films with high electron mobility. Nowadays, the chemical vapor deposition of hydrocarbons on copper is the most investigated synthesis method, although many other carbon precursors and metal substrates are used too. Among these, ethanol is a safe and inexpensive precursor that seems to offer favorable synthesis kinetics. We explored the growth of graphene on copper from ethanol, focusing on processes of short duration (up to one min). We investigated the produced films by electron microscopy, Raman and X-ray photoemission spectroscopy. A graphene film with high crystalline quality was found to cover the entire copper catalyst substrate in just 20 s, making ethanol appear as a more efficient carbon feedstock than methane and other commonly used precursors. - Highlights: • Graphene films were grown by fast chemical vapor deposition of ethanol on copper. • High-temperature/short-time growth produced highly crystalline graphene. • The copper substrate was entirely covered by a graphene film in just 20 s. • Addition of H{sub 2} had a negligible effect on the crystalline quality.

  9. Generalized modeling of multi-component vaporization/condensation phenomena for multi-phase-flow analysis

    International Nuclear Information System (INIS)

    Morita, K.; Fukuda, K.; Tobita, Y.; Kondo, Sa.; Suzuki, T.; Maschek, W.

    2003-01-01

    A new multi-component vaporization/condensation (V/C) model was developed to provide a generalized model for safety analysis codes of liquid metal cooled reactors (LMRs). These codes simulate thermal-hydraulic phenomena of multi-phase, multi-component flows, which is essential to investigate core disruptive accidents of LMRs such as fast breeder reactors and accelerator driven systems. The developed model characterizes the V/C processes associated with phase transition by employing heat transfer and mass-diffusion limited models for analyses of relatively short-time-scale multi-phase, multi-component hydraulic problems, among which vaporization and condensation, or simultaneous heat and mass transfer, play an important role. The heat transfer limited model describes the non-equilibrium phase transition processes occurring at interfaces, while the mass-diffusion limited model is employed to represent effects of non-condensable gases and multi-component mixture on V/C processes. Verification of the model and method employed in the multi-component V/C model of a multi-phase flow code was performed successfully by analyzing a series of multi-bubble condensation experiments. The applicability of the model to the accident analysis of LMRs is also discussed by comparison between steam and metallic vapor systems. (orig.)

  10. Dynamics of vapor plume in transient keyhole during laser welding of stainless steel: Local evaporation, plume swing and gas entrapment into porosity

    Science.gov (United States)

    Pang, Shengyong; Chen, Xin; Shao, Xinyu; Gong, Shuili; Xiao, Jianzhong

    2016-07-01

    In order to better understand the local evaporation phenomena of keyhole wall, vapor plume swing above the keyhole and ambient gas entrapment into the porosity defects, the 3D time-dependent dynamics of the metallic vapor plume in a transient keyhole during fiber laser welding is numerically investigated. The vapor dynamical parameters, including the velocity and pressure, are successfully predicted and obtain good agreements with the experimental and literature data. It is found that the vapor plume flow inside the keyhole has complex multiple directions, and this various directions characteristic of the vapor plume is resulted from the dynamic evaporation phenomena with variable locations and orientations on the keyhole wall. The results also demonstrate that because of this dynamic local evaporation, the ejected vapor plume from the keyhole opening is usually in high frequency swinging. The results further indicate that the oscillation frequency of the plume swing angle is around 2.0-8.0 kHz, which is of the same order of magnitude with that of the keyhole depth (2.0-5.0 kHz). This consistency clearly shows that the swing of the ejected vapor plume is closely associated with the keyhole instability during laser welding. Furthermore, it is learned that there is usually a negative pressure region (several hundred Pa lower than the atmospheric pressure) of the vapor flow around the keyhole opening. This pressure could lead to a strong vortex flow near the rear keyhole wall, especially when the velocity of the ejected metallic vapor from the keyhole opening is high. Under the effect of this flow, the ambient gas is involved into the keyhole, and could finally be entrapped into the bubbles within a very short time (keyhole.

  11. DSMC simulations of vapor transport toward development of the lithium vapor box divertor concept

    Science.gov (United States)

    Jagoe, Christopher; Schwartz, Jacob; Goldston, Robert

    2016-10-01

    The lithium vapor divertor box concept attempts to achieve volumetric dissipation of the high heat efflux from a fusion power system. The vapor extracts the heat of the incoming plasma by ionization and radiation, while remaining localized in the vapor box due to differential pumping based on rapid condensation. Preliminary calculations with lithium vapor at densities appropriate for an NSTX-U-scale machine give Knudsen numbers between 0.01 and 1, outside both the range of continuum fluid dynamics and of collisionless Monte Carlo. The direct-simulation Monte Carlo (DSMC) method, however, can simulate rarefied gas flows in this regime. Using the solver contained in the OpenFOAM package, pressure-driven flows of water vapor will be analyzed. The use of water vapor in the relevant range of Knudsen number allows for a flexible similarity experiment to verify the reliability of the code before moving to tests with lithium. The simulation geometry consists of chains of boxes on a temperature gradient, connected by slots with widths that are a representative fraction of the dimensions of the box. We expect choked flow, sonic shocks, and order-of-magnitude pressure and density drops from box to box, but this expectation will be tested in the simulation and then experiment. This work is supported by the Princeton Environmental Institute.

  12. 40 CFR 52.255 - Gasoline transfer vapor control.

    Science.gov (United States)

    2010-07-01

    ... 40 Protection of Environment 3 2010-07-01 2010-07-01 false Gasoline transfer vapor control. 52.255... (CONTINUED) APPROVAL AND PROMULGATION OF IMPLEMENTATION PLANS California § 52.255 Gasoline transfer vapor control. (a) “Gasoline” means any petroleum distillate having a Reid vapor pressure of 4 pounds or greater...

  13. 40 CFR 52.787 - Gasoline transfer vapor control.

    Science.gov (United States)

    2010-07-01

    ... 40 Protection of Environment 3 2010-07-01 2010-07-01 false Gasoline transfer vapor control. 52.787... (CONTINUED) APPROVAL AND PROMULGATION OF IMPLEMENTATION PLANS Indiana § 52.787 Gasoline transfer vapor control. (a) Gasoline means any petroleum distillate having a Reid vapor pressure of 4 pounds or greater...

  14. 21 CFR 888.4220 - Cement monomer vapor evacuator.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Cement monomer vapor evacuator. 888.4220 Section... (CONTINUED) MEDICAL DEVICES ORTHOPEDIC DEVICES Surgical Devices § 888.4220 Cement monomer vapor evacuator. (a) Identification. A cement monomer vapor evacuator is a device intended for use during surgery to contain or remove...

  15. Review of literature on the asymmetric collapse of vapor bubbles

    International Nuclear Information System (INIS)

    Fremd, R.; Froehlich, G.

    1977-06-01

    This report contains a review of literature on the asymmetric collape of vapor bubbles by cavitation with special consideration to vapor explosions. Two numerical models, which describe the collapse of cavities in the neighbourhood of a solid surface, are presented. Moreover experimental results for this case are provided. Propositions to apply the numerical models to vapor explosions are made. (orig.) [de

  16. The separation of hydrocarbons from waste vapor streams

    International Nuclear Information System (INIS)

    Behling, R.D.; Ohlrogge, K.; Peinemann, K.V.; Kyburz, E.

    1989-01-01

    Hydrocarbon vapors generated from industrial processes dispersed into air are contributing factors for the creation of photochemical smog. The separation of hydrocarbon vapor by means of membranes is in case of some applications a technically simple and economic process. A membrane vapor separation process with a following treatment of the retentate by catalytic incineration is introduced in this paper

  17. Recommended vapor pressures for thiophene, sulfolane, and dimethyl sulfoxide

    Czech Academy of Sciences Publication Activity Database

    Fulem, Michal; Růžička, K.; Růžička, M.

    2011-01-01

    Roč. 303, č. 2 (2011), s. 205-216 ISSN 0378-3812 Institutional research plan: CEZ:AV0Z10100521 Keywords : thiophene sulfolane * dimethyl sulfoxide * vapor pressure * heat capacity * vaporization enthalpy * recommended vapor pressure equation Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.139, year: 2011

  18. 33 CFR 154.826 - Vapor compressors and blowers.

    Science.gov (United States)

    2010-07-01

    ...) Excessive shaft bearing temperature. (d) If a centrifugal compressor, fan, or lobe blower handles vapor in... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Vapor compressors and blowers....826 Vapor compressors and blowers. (a) Each inlet and outlet to a compressor or blower which handles...

  19. The vaporization enthalpy and vapor pressure of S (+)-methamphetamine at T = 298.15 K by correlation gas chromatography

    International Nuclear Information System (INIS)

    Thornton, Melissa; Gobble, Chase; Chickos, James

    2014-01-01

    Highlights: • The vaporization enthalpy of (d)-methamphetamine was measured. • The vapor pressure of (d)-methamphetamine as a function of temperature was evaluated. • The vapor pressure of 4-benzylpiperidine as a function of temperature was evaluated. - Abstract: The vaporization enthalpy and vapor pressure of S (+)-methamphetamine is evaluated by correlation-gas chromatography. A vaporization enthalpy of (58.7 ± 4.3) kJ · mol −1 and a vapor pressure, p = (38 ± 9) Pa has been obtained using a variety of secondary aliphatic amines as standards. In addition, equations describing the vapor pressure temperature dependence are provided for standards and S (+)-methamphetamine covering the temperature range from T = 298.15 K to the boiling temperature. Boiling temperatures are reproduced within an interval of 8 K or less

  20. New metals

    International Nuclear Information System (INIS)

    Bergqvist, U.

    1983-12-01

    The aim of this report is to estimate the exposure to various metals and metal compounds and discuss the available information of the possible toxic effects of these metals and compounds. In the first section, some metals are defined as those with either a large or a fast increasing exposure to living organisms. The available information on toxicity is discussed in the second section. In the third section interesting metals are defined as compounds having a large exposure and an apparent insufficient knowledge of their possible toxic effects. Comments on each of these metals are also to be found in the third section. (G.B.)

  1. A Quantitative Tunneling/Desorption Model for the Exchange Current at the Porous Electrode/Beta - Alumina/Alkali Metal Gas Three Phase Zone at 700-1300K

    Science.gov (United States)

    Williams, R. M.; Ryan, M. A.; Saipetch, C.; LeDuc, H. G.

    1996-01-01

    The exchange current observed at porous metal electrodes on sodium or potassium beta -alumina solid electrolytes in alkali metal vapor is quantitatively modeled with a multi-step process with good agreement with experimental results.

  2. Highly stable [mambf6-n(o/h2o)n(ligand)2(solvent)x]n metal organic frameworks

    KAUST Repository

    Eddaoudi, Mohamed

    2016-10-13

    Provided herein are metal organic frameworks having high selectivity and stability in the present of gases and vapors including H2S, H2O, and CO2. Metal organic frameworks can comprise metal nodes and N-donor organic ligands. Further provided are methods of making metal organic frameworks.

  3. Temperature dependences of saturated vapor pressure and the enthalpy of vaporization of n-pentyl esters of dicarboxylic acids

    Science.gov (United States)

    Portnova, S. V.; Krasnykh, E. L.; Levanova, S. V.

    2016-05-01

    The saturated vapor pressures and enthalpies of vaporization of n-pentyl esters of linear C2-C6 dicarboxylic acids are determined by the transpiration method in the temperature range of 309.2-361.2 K. The dependences of enthalpies of vaporization on the number of carbon atoms in the molecule and on the retention indices have been determined. The predictive capabilities of the existing calculation schemes for estimation of enthalpy of vaporization of the studied compounds have been analyzed.

  4. A numerical investigation of vapor intrusion--the dynamic response of contaminant vapors to rainfall events.

    Science.gov (United States)

    Shen, Rui; Pennell, Kelly G; Suuberg, Eric M

    2012-10-15

    The U.S. government and various agencies have published guidelines for field investigation of vapor intrusion, most of which suggest soil gas sampling as an integral part of the investigation. Contaminant soil gas data are often relatively more stable than indoor air vapor concentration measurements, but meteorological conditions might influence soil gas values. Although a few field and numerical studies have considered some temporal effects on soil gas vapor transport, a full explanation of the contaminant vapor concentration response to rainfall events is not available. This manuscript seeks to demonstrate the effects on soil vapor transport during and after different rainfall events, by applying a coupled numerical model of fluid flow and vapor transport. Both a single rainfall event and seasonal rainfall events were modeled. For the single rainfall event models, the vapor response process could be divided into three steps: namely, infiltration, water redistribution, and establishment of a water lens atop the groundwater source. In the infiltration step, rainfall intensity was found to determine the speed of the wetting front and wash-out effect on the vapor. The passage of the wetting front led to an increase of the vapor concentration in both the infiltration and water redistribution steps and this effect is noted at soil probes located 1m below the ground surface. When the mixing of groundwater with infiltrated water was not allowed, a clean water lens accumulated above the groundwater source and led to a capping effect which can reduce diffusion rates of contaminant from the source. Seasonal rainfall with short time intervals involved superposition of the individual rainfall events. This modeling results indicated that for relatively deeper soil that the infiltration wetting front could not flood, the effects were damped out in less than a month after rain; while in the long term (years), possible formation of a water lens played a larger role in determining

  5. Plasma-enhanced chemical vapor deposition for YBCO film fabrication of superconducting fault-current limiter

    Energy Technology Data Exchange (ETDEWEB)

    Jun, Byung Hyuk; Kim, Chan Joong

    2006-05-15

    Since the high-temperature superconductor of oxide type was founded, many researches and efforts have been performed for finding its application field. The YBCO superconducting film fabricated on economic metal substrate with uniform critical current density is considered as superconducting fault-current limiter (SFCL). There are physical and chemical processes to fabricate superconductor film, and it is understood that the chemical methods are more economic to deposit large area. Among them, chemical vapor deposition (CVD) is a promising deposition method in obtaining film uniformity. To solve the problems due to the high deposition temperature of thermal CVD, plasma-enhanced chemical vapor deposition (PECVD) is suggested. This report describes the principle and fabrication trend of SFCL, example of YBCO film deposition by PECVD method, and principle of plasma deposition.

  6. Mass spectrometric study of Nd2S3 vaporization

    International Nuclear Information System (INIS)

    Fenochka, B.V.

    1987-01-01

    The authors conduct a mass-spectrometric study of neodymium(III) sulfide vaporization. The chemical composition of the samples was stoichiometric and the samples were vaporized from tantalum effusion cells. When the vapor over Nd 2 S 3 is ionized by electrons the mass spectra shows monovalent cations of Nd, S, NdS, and NdO. The enthalpy of vaporization if Nd atoms from Nd 2 S 3 at average experimental temperatures and the standard enthalpy of reaction is shown. Also presented is the enthalpy of vaporization of NdS molecules from Nd 2 S 3 at average experimental temperatures and the standard enthalpy of reaction

  7. Cumulus convection and the terrestrial water-vapor distribution

    Science.gov (United States)

    Donner, Leo J.

    1988-01-01

    Cumulus convection plays a significant role in determining the structure of the terrestrial water vapor field. Cumulus convection acts directly on the moisture field by condensing and precipitating water vapor and by redistributing water vapor through cumulus induced eddy circulations. The mechanisms by which cumulus convection influences the terrestrial water vapor distribution is outlined. Calculations using a theory due to Kuo is used to illustrate the mechanisms by which cumulus convection works. Understanding of these processes greatly aids the ability of researchers to interpret the seasonal and spatial distribution of atmospheric water vapor by providing information on the nature of sources and sinks and the global circulation.

  8. Liquid-liquid contact in vapor explosion

    International Nuclear Information System (INIS)

    Segev, A.

    1978-08-01

    The contact of two liquid materials, one of which is at a temperature substantially above the boiling point of the other, can lead to fast energy conversion and a subsequent shock wave. This phenomenon is called a vapor explosion. One method of producing intimate, liquid-liquid contact (which is known to be a necessary condition for vapor explosion) is a shock tube configuration. Such experiments in which water was impacted upon molten aluminum showed that very high pressures, even larger than the thermodynamic critical pressure, could occur. The mechanism by which such sharp pressure pulses are generated is not yet clear. The report describes experiments in which cold liquids (Freon-11, Freon-22, water, or butanol) were impacted upon various hot materials

  9. Thermodynamics of the vaporization of uranium tetrabromide

    International Nuclear Information System (INIS)

    Singh, Z.; Prasad, R.; Venugopal, P.V.; Roy, K.N.; Sood, D.D.

    1981-01-01

    Vapour pressures of solid and liquid uranium tetrabromide have been measured in the temperature range of 696 to 805 K and 805 to 1003 K respectively by transpiration and evaporation-temperature techniques. The vapour pressures obtained by the two techniques are in good agreement and have been combined to give the reported vapour-pressure equations for solid and liquid uranium tetrabromide. The melting temperature, the normal boiling temperature, the standard enthalpy of vaporization ΔH 0 (vap, 298.15 K), and the standard entropy of vaporization ΔS 0 (vap, 298.15 K) are reported. The enthalpy of fusion ΔH 0 (fus, 802 K) is also reported. The thermodynamic quantities from the present study are compared with those in the literature and critically analysed. (author)

  10. Vaporization of structural materials in severe accidents

    International Nuclear Information System (INIS)

    Lorenz, R.A.

    1982-01-01

    Vaporized structural materials form the bulk of aerosol particles that can transport fission products in severe LWR accidents. As part of the Severe Accident Sequence Analysis (SASA) program at Oak Ridge National Laboratory, a model has been developed based on a mass transport coefficient to describe the transport of materials from the surface of a molten pool. In many accident scenarios, the coefficient can be calculated from existing correlations for mass transfer by natural convection. Data from SASCHA fuel melting tests (Karlsruhe, Germany) show that the partial pressures of many of the melt components (Fe, Cr, Co, Mn, Sn) required for the model can be calculated from the vapor pressures of the pure species and Raoult's law. These calculations indicate much lower aerosol concentrations than reported in previous studies

  11. Improved cell for water-vapor electrolysis

    Science.gov (United States)

    Aylward, J. R.

    1981-01-01

    Continuous-flow electrolytic cells decompose water vapor in steam and room air into hydrogen and oxygen. Sintered iridium oxide catalytic anode coating yields dissociation rates hundredfold greater than those obtained using platinum black. Cell consists of two mirror-image cells, with dual cathode sandwiched between two anodes. Gas traverses serpentine channels within cell and is dissociated at anode. Oxygen mingles with gas stream, while hydrogen migrates through porous matrix and is liberated as gas at cathode.

  12. Ceramic composites by chemical vapor infiltration

    International Nuclear Information System (INIS)

    Stinton, D.P.

    1987-01-01

    Composites consisting of silicon carbide matrices reinforced with continuous ceramic fibers are being developed for high-temperature structural applications. Chemical vapor deposition (CVD) techniques are very effective in fabricating composites with high strengths and exceptional fracture toughness. Mechanical properties of infiltrated composites are controlled by the strength of the interfacial bond between the fibers and matrix. This paper describes two CVD techniques and reviews the models being developed to better understand and control the infiltration process

  13. DuPont Chemical Vapor Technical Report

    International Nuclear Information System (INIS)

    MOORE, T.L.

    2003-01-01

    DuPont Safety Resources was tasked with reviewing the current chemical vapor control practices and providing preventive recommendations on best commercial techniques to control worker exposures. The increased focus of the tank closure project to meet the 2024 Tri-Party Agreement (TPA) milestones has surfaced concerns among some CH2MHill employees and other interested parties. CH2MHill is committed to providing a safe working environment for employees and desires to safely manage the tank farm operations using appropriate control measures. To address worker concerns, CH2MHill has chartered a ''Chemical Vapors Project'' to integrate the activities of multiple CH2MHill project teams, and solicit the expertise of external resources, including an independent Industrial Hygiene expert panel, a communications consultant, and DuPont Safety Resources. Over a three-month time period, DuPont worked with CH2MHill ESH and Q, Industrial Hygiene, Engineering, and the independent expert panel to perform the assessment. The process included overview presentations, formal interviews, informal discussions, documentation review, and literature review. DuPont Safety Resources concluded that it is highly unlikely that workers in the tank farms are exposed to chemicals above established standards. Additionally, the conventional and radiological chemistry is understood, the inherent chemical hazards are known, and the risk associated with chemical vapor exposure is properly managed. The assessment highlighted management's commitment to addressing chemical vapor hazards and controlling the associated risks. Additionally, we found the Industrial Hygiene staff to be technically competent and well motivated. The tank characterization data resides in a comprehensive database containing the tank chemical compositions and relevant airborne concentrations

  14. Discharge characteristics of copper vapor laser

    International Nuclear Information System (INIS)

    Nemoto, Koshichi; Fujii, Takashi

    1988-01-01

    This report describes about the copper vapor laser and experimental results of it's discharge characteristics. We measured time varing of plasma regist, and analyzed electron density. (1) The plasma regist is larger than 100Ω at the beginning of discharge, and is rapidly reduced to about 10Ω. (2) The electron density is estimated about 1∼2 x 10 12 /cc at the begining of discharge. (author)

  15. Transport properties of fission product vapors

    International Nuclear Information System (INIS)

    Im, K.H.; Ahluwalia, R.K.

    1983-07-01

    Kinetic theory of gases is used to calculate the transport properties of fission product vapors in a steam and hydrogen environment. Provided in tabular form is diffusivity of steam and hydrogen, viscosity and thermal conductivity of the gaseous mixture, and diffusivity of cesium iodide, cesium hydroxide, diatomic tellurium and tellurium dioxide. These transport properties are required in determining the thermal-hydraulics of and fission product transport in light water reactors

  16. Quality and Control of Water Vapor Winds

    Science.gov (United States)

    Jedlovec, Gary J.; Atkinson, Robert J.

    1996-01-01

    Water vapor imagery from the geostationary satellites such as GOES, Meteosat, and GMS provides synoptic views of dynamical events on a continual basis. Because the imagery represents a non-linear combination of mid- and upper-tropospheric thermodynamic parameters (three-dimensional variations in temperature and humidity), video loops of these image products provide enlightening views of regional flow fields, the movement of tropical and extratropical storm systems, the transfer of moisture between hemispheres and from the tropics to the mid- latitudes, and the dominance of high pressure systems over particular regions of the Earth. Despite the obvious larger scale features, the water vapor imagery contains significant image variability down to the single 8 km GOES pixel. These features can be quantitatively identified and tracked from one time to the next using various image processing techniques. Merrill et al. (1991), Hayden and Schmidt (1992), and Laurent (1993) have documented the operational procedures and capabilities of NOAA and ESOC to produce cloud and water vapor winds. These techniques employ standard correlation and template matching approaches to wind tracking and use qualitative and quantitative procedures to eliminate bad wind vectors from the wind data set. Techniques have also been developed to improve the quality of the operational winds though robust editing procedures (Hayden and Veldon 1991). These quality and control approaches have limitations, are often subjective, and constrain wind variability to be consistent with model derived wind fields. This paper describes research focused on the refinement of objective quality and control parameters for water vapor wind vector data sets. New quality and control measures are developed and employed to provide a more robust wind data set for climate analysis, data assimilation studies, as well as operational weather forecasting. The parameters are applicable to cloud-tracked winds as well with minor

  17. Uranium metal production by molten salt electrolysis

    International Nuclear Information System (INIS)

    Takasawa, Yutaka

    1999-01-01

    Atomic vapor laser isotope separation (AVLIS) is a promising uranium enrichment technology in the next generation. Electrolytic reduction of uranium oxides into uranium metal is proposed for the preparation of uranium metal as a feed material for AVLIS plant. Considering economical performance, continuos process concept and minimizing the amount of radioactive waste, an electrolytic process for producing uranium metal directly from uranium oxides will offer potential advantages over the existing commercial process. Studies of uranium metal by electrolysis in fluoride salts (BaF 2 -LiF-UF 4 (74-11-15 w/o) at 1150-1200degC, using both a laboratory scale apparatus and an engineering scale one, and continuous casting of uranium metal were carried out in order to decide the optimum operating conditions and the design of the industrial electrolytic cells. (author)

  18. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  19. Estimating evaporative vapor generation from automobiles based on parking activities

    International Nuclear Information System (INIS)

    Dong, Xinyi; Tschantz, Michael; Fu, Joshua S.

    2015-01-01

    A new approach is proposed to quantify the evaporative vapor generation based on real parking activity data. As compared to the existing methods, two improvements are applied in this new approach to reduce the uncertainties: First, evaporative vapor generation from diurnal parking events is usually calculated based on estimated average parking duration for the whole fleet, while in this study, vapor generation rate is calculated based on parking activities distribution. Second, rather than using the daily temperature gradient, this study uses hourly temperature observations to derive the hourly incremental vapor generation rates. The parking distribution and hourly incremental vapor generation rates are then adopted with Wade–Reddy's equation to estimate the weighted average evaporative generation. We find that hourly incremental rates can better describe the temporal variations of vapor generation, and the weighted vapor generation rate is 5–8% less than calculation without considering parking activity. - Highlights: • We applied real parking distribution data to estimate evaporative vapor generation. • We applied real hourly temperature data to estimate hourly incremental vapor generation rate. • Evaporative emission for Florence is estimated based on parking distribution and hourly rate. - A new approach is proposed to quantify the weighted evaporative vapor generation based on parking distribution with an hourly incremental vapor generation rate

  20. Marketing practices of vapor store owners.

    Science.gov (United States)

    Cheney, Marshall; Gowin, Mary; Wann, Taylor Franklin

    2015-06-01

    We examined the marketing strategies for local vapor stores in a large metropolitan area in Oklahoma. Vapor store owners or managers (n = 33) participated in individual interviews regarding marketing practices in 2014. We asked owners about their marketing strategies and the groups they targeted. We transcribed the interviews and analyzed them for themes. Store owners used a variety of marketing strategies to bring new customers to their stores and keep current customers coming back. These marketing strategies showed many parallels to tobacco industry strategies. Most owners engaged in some form of traditional marketing practices (e.g., print media), but only a few used radio or television advertising because of budget constraints. Owners used social media and other forms of electronic communication, pricing discounts and specials, and loyalty programs. Owners also had booths at local events, sponsored community events, and hosted them in their stores. Owners attempted to target different groups of users, such as college students and long-term smokers. Local vapor store marketing practices closely resemble current and former tobacco industry marketing strategies. Surveillance of marketing practices should include local and Web-based strategies.

  1. Released air during vapor and air cavitation

    Energy Technology Data Exchange (ETDEWEB)

    Jablonská, Jana, E-mail: jana.jablonska@vsb.cz; Kozubková, Milada, E-mail: milada.kozubkova@vsb.cz [VŠB-Technical University of Ostrava, Faculty of Mechanical Engineering, Department of Hydromechanics and Hydraulic Equipment, 17. listopadu 15, 708 33 Ostrava-Poruba (Czech Republic)

    2016-06-30

    Cavitation today is a very important problem that is solved by means of experimental and mathematical methods. The article deals with the generation of cavitation in convergent divergent nozzle of rectangular cross section. Measurement of pressure, flow rate, temperature, amount of dissolved air in the liquid and visualization of cavitation area using high-speed camera was performed for different flow rates. The measurement results were generalized by dimensionless analysis, which allows easy detection of cavitation in the nozzle. For numerical simulation the multiphase mathematical model of cavitation consisting of water and vapor was created. During verification the disagreement with the measurements for higher flow rates was proved, therefore the model was extended to multiphase mathematical model (water, vapor and air), due to release of dissolved air. For the mathematical modeling the multiphase turbulence RNG k-ε model for low Reynolds number flow with vapor and air cavitation was used. Subsequently the sizes of the cavitation area were verified. In article the inlet pressure and loss coefficient depending on the amount of air added to the mathematical model are evaluated. On the basis of the approach it may be create a methodology to estimate the amount of released air added at the inlet to the modeled area.

  2. Combined rankine and vapor compression cycles

    Science.gov (United States)

    Radcliff, Thomas D.; Biederman, Bruce P.; Brasz, Joost J.

    2005-04-19

    An organic rankine cycle system is combined with a vapor compression cycle system with the turbine generator of the organic rankine cycle generating the power necessary to operate the motor of the refrigerant compressor. The vapor compression cycle is applied with its evaporator cooling the inlet air into a gas turbine, and the organic rankine cycle is applied to receive heat from a gas turbine exhaust to heat its boiler within one embodiment, a common condenser is used for the organic rankine cycle and the vapor compression cycle, with a common refrigerant, R-245a being circulated within both systems. In another embodiment, the turbine driven generator has a common shaft connected to the compressor to thereby eliminate the need for a separate motor to drive the compressor. In another embodiment, an organic rankine cycle system is applied to an internal combustion engine to cool the fluids thereof, and the turbo charged air is cooled first by the organic rankine cycle system and then by an air conditioner prior to passing into the intake of the engine.

  3. Vapor-Driven Propulsion of Catalytic Micromotors

    Science.gov (United States)

    Dong, Renfeng; Li, Jinxing; Rozen, Isaac; Ezhilan, Barath; Xu, Tailin; Christianson, Caleb; Gao, Wei; Saintillan, David; Ren, Biye; Wang, Joseph

    2015-08-01

    Chemically-powered micromotors offer exciting opportunities in diverse fields, including therapeutic delivery, environmental remediation, and nanoscale manufacturing. However, these nanovehicles require direct addition of high concentration of chemical fuel to the motor solution for their propulsion. We report the efficient vapor-powered propulsion of catalytic micromotors without direct addition of fuel to the micromotor solution. Diffusion of hydrazine vapor from the surrounding atmosphere into the sample solution is instead used to trigger rapid movement of iridium-gold Janus microsphere motors. Such operation creates a new type of remotely-triggered and powered catalytic micro/nanomotors that are responsive to their surrounding environment. This new propulsion mechanism is accompanied by unique phenomena, such as the distinct off-on response to the presence of fuel in the surrounding atmosphere, and spatio-temporal dependence of the motor speed borne out of the concentration gradient evolution within the motor solution. The relationship between the motor speed and the variables affecting the fuel concentration distribution is examined using a theoretical model for hydrazine transport, which is in turn used to explain the observed phenomena. The vapor-powered catalytic micro/nanomotors offer new opportunities in gas sensing, threat detection, and environmental monitoring, and open the door for a new class of environmentally-triggered micromotors.

  4. Physical Vapor Deposition of Thin Films

    Science.gov (United States)

    Mahan, John E.

    2000-01-01

    A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

  5. Characterization of a Compact Water Vapor Radiometer

    Science.gov (United States)

    Gill, Ajay; Selina, Rob

    2018-01-01

    We report on laboratory test results of the Compact Water Vapor Radiometer (CWVR) prototype for the Karl G. Jansky Very Large Array (VLA), a five-channel design centered around the 22 GHz water vapor line. Fluctuations in perceptible water vapor cause fluctuations in atmospheric brightness emission, which are assumed to be proportional to phase fluctuations of the astronomical signal seen by an antenna. The design is intended to support empirical radiometric phase corrections for each baseline in the array.The dynamic range, channel isolation, and gain stability of the device were characterized. The device has a useful dynamic range of order 18 dB after calibration, and the CWVR channel isolation requirement of test, the diode detectors were operated in the square-law region, and a K-band noise diode was used as the broadband input power source to the CWVR over a period of 64 hours. Results indicate that the fluctuations in output counts are negatively correlated to the CWVR enclosure ambient temperature, with a change of ~ 405 counts per 1° C change in temperature.A correction for the CWVR ambient temperature makes a considerable improvement in stability for τ > 102.6 sec. With temperature corrections, the single channel and channel difference gain stability per channel is test results indicate that the CWVR meets required specifications for dynamic range, channel isolation, and gain stability in order to proceed with testing on a pair of VLA antennas.

  6. Marketing Practices of Vapor Store Owners

    Science.gov (United States)

    Gowin, Mary; Wann, Taylor Franklin

    2015-01-01

    Objectives. We examined the marketing strategies for local vapor stores in a large metropolitan area in Oklahoma. Methods. Vapor store owners or managers (n = 33) participated in individual interviews regarding marketing practices in 2014. We asked owners about their marketing strategies and the groups they targeted. We transcribed the interviews and analyzed them for themes. Results. Store owners used a variety of marketing strategies to bring new customers to their stores and keep current customers coming back. These marketing strategies showed many parallels to tobacco industry strategies. Most owners engaged in some form of traditional marketing practices (e.g., print media), but only a few used radio or television advertising because of budget constraints. Owners used social media and other forms of electronic communication, pricing discounts and specials, and loyalty programs. Owners also had booths at local events, sponsored community events, and hosted them in their stores. Owners attempted to target different groups of users, such as college students and long-term smokers. Conclusions. Local vapor store marketing practices closely resemble current and former tobacco industry marketing strategies. Surveillance of marketing practices should include local and Web-based strategies. PMID:25880960

  7. A multistratum approach to soil vapor extraction

    International Nuclear Information System (INIS)

    Fuhr, J.M.; Giesler, R.S.

    1993-01-01

    An innovative soil remediation design was implemented to address petroleum hydrocarbon contamination in a gradationally stratified subsurface environment containing alternating layers of clay, sand and clayey sand, and perched water tables in north Florida. The soil vapor extraction (SVE) design enables remediation to focus on distinct subsurface intervals depending on changing site conditions such as constituent concentration levels and periodic water-table fluctuations. Contaminated soils were assessed from the land surface to the top of a two foot thick perched water table located at 13 feet below land surface (bls), and also were encountered below the perched water table downward to another perched water table at 45 feet bls. Use of an organic vapor analyzer equipped with a flame ionization detector revealed hydrocarbon vapor concentrations in soil samples ranging to greater than 1,000 parts per million (ppm). Nonaqueous phase liquids were encountered on both perched water tables. Based on the site assessment, a multistratum soil and ground-water remediation system was designed and constructed. A pilot test was conducted to aid in the design of an effective SVE system

  8. Experimental study of vapor bubble dynamics

    International Nuclear Information System (INIS)

    Pasquini, Maria-Elena

    2015-01-01

    The object of this thesis is an experimental study of vapor bubble dynamics in sub-cooled nucleate boiling. The test section is locally heated by focusing a laser beam: heat fluxes from 1 e4 to 1.5 e6 W/m 2 and water temperature between 100 and 88 C have been considered. Three boiling regimes have been observed. Under saturated conditions and with low heat fluxes a developed nucleate boiling regime has been observed. Under higher sub-cooling and still with low heat fluxes an equilibrium regime has been observed in which the liquid flowrate evaporating at the bubble base is compensated by the vapor condensing flowrate at bubble top. A third regime have been observed at high heat fluxes for all water conditions: it is characterized by the formation of a large dry spot on the heated surface that keeps the nucleation site dry after bubble detachment. The condensation phase starts after bubble detachment. Bubble equivalent radius at detachment varies between 1 and 2.5 mm. Bubble properties have been measured and non-dimensional groups have been used to characterize bubble dynamics. Capillary waves have been observed on the bubble surface thanks to high-speed images acquisition. Two main phenomena have been proposed to explain capillary waves effects on bubble condensation: increasing of the phases interface area and decreasing of vapor bubble translation velocity, because of the increased drag force on the deformed bubble. (author) [fr

  9. Nuclear vapor thermal reactor propulsion technology

    International Nuclear Information System (INIS)

    Maya, I.; Diaz, N.J.; Dugan, E.T.; Watanabe, Y.; McClanahan, J.A.; Wen-Hsiung Tu; Carman, R.L.

    1993-01-01

    The conceptual design of a nuclear rocket based on the vapor core reactor is presented. The Nuclear Vapor Thermal Rocket (NVTR) offers the potential for a specific impulse of 1000 to 1200 s at thrust-to-weight ratios of 1 to 2. The design is based on NERVA geometry and systems with the solid fuel replaced by uranium tetrafluoride (UF 4 ) vapor. The closed-loop core does not rely on hydrodynamic confinement of the fuel. The hydrogen propellant is separated from the UF 4 fuel gas by graphite structure. The hydrogen is maintained at high pressure (∼100 atm), and exits the core at 3,100 K to 3,500 K. Zirconium carbide and hafnium carbide coatings are used to protect the hot graphite from the hydrogen. The core is surrounded by beryllium oxide reflector. The nuclear reactor core has been integrated into a 75 klb engine design using an expander cycle and dual turbopumps. The NVTR offers the potential for an incremental technology development pathway to high performance gas core reactors. Since the fuel is readily available, it also offers advantages in the initial cost of development, as it will not require major expenditures for fuel development

  10. Magmatic-vapor expansion and the formation of high-sulfidation gold deposits: Chemical controls on alteration and mineralization

    Science.gov (United States)

    Henley, R.W.; Berger, B.R.

    2011-01-01

    Large bulk-tonnage high-sulfidation gold deposits, such as Yanacocha, Peru, are the surface expression of structurally-controlled lode gold deposits, such as El Indio, Chile. Both formed in active andesite-dacite volcanic terranes. Fluid inclusion, stable isotope and geologic data show that lode deposits formed within 1500. m of the paleo-surface as a consequence of the expansion of low-salinity, low-density magmatic vapor with very limited, if any, groundwater mixing. They are characterized by an initial 'Sulfate' Stage of advanced argillic wallrock alteration ?? alunite commonly with intense silicification followed by a 'Sulfide' Stage - a succession of discrete sulfide-sulfosalt veins that may be ore grade in gold and silver. Fluid inclusions in quartz formed during wallrock alteration have homogenization temperatures between 100 and over 500 ??C and preserve a record of a vapor-rich environment. Recent data for El Indio and similar deposits show that at the commencement of the Sulfide Stage, 'condensation' of Cu-As-S sulfosalt melts with trace concentrations of Sb, Te, Bi, Ag and Au occurred at > 600 ??C following pyrite deposition. Euhedral quartz crystals were simultaneously deposited from the vapor phase during crystallization of the vapor-saturated melt occurs to Fe-tennantite with progressive non-equilibrium fractionation of heavy metals between melt-vapor and solid. Vugs containing a range of sulfides, sulfosalts and gold record the changing composition of the vapor. Published fluid inclusion and mineralogical data are reviewed in the context of geological relationships to establish boundary conditions through which to trace the expansion of magmatic vapor from source to surface and consequent alteration and mineralization. Initially heat loss from the vapor is high resulting in the formation of acid condensate permeating through the wallrock. This Sulfate Stage alteration effectively isolates the expansion of magmatic vapor in subsurface fracture arrays

  11. Calculating the enthalpy of vaporization for ionic liquid clusters.

    Science.gov (United States)

    Kelkar, Manish S; Maginn, Edward J

    2007-08-16

    Classical atomistic simulations are used to compute the enthalpy of vaporization of a series of ionic liquids composed of 1-alkyl-3-methylimidazolium cations paired with the bis(trifluoromethylsulfonyl)imide anion. The calculations show that the enthalpy of vaporization is lowest for neutral ion pairs. The enthalpy of vaporization increases by about 40 kJ/mol with the addition of each ion pair to the vaporizing cluster. Non-neutral clusters have much higher vaporization enthalpies than their neutral counterparts and thus are not expected to make up a significant fraction of volatile species. The enthalpy of vaporization increases slightly as the cation alkyl chain length increases and as temperature decreases. The calculated vaporization enthalpies are consistent with two sets of recent experimental measurements as well as with previous atomistic simulations.

  12. Separation of magnesium from magnesium chloride and zirconium and/or hafnium subchlorides in the production of zirconium and/or hafnium sponge metal

    International Nuclear Information System (INIS)

    Abodishish, H.A.M.; Adams, R.J.; Kearl, S.R.

    1992-01-01

    This patent describes the producing of a refractory metal wherein a sponge refractory metal is produced as an intermediate product by the use of magnesium with the incidental production of magnesium chloride, and wherein residual magnesium is separated from the magnesium chloride and from refractory metal to a vacuum distillation step which fractionally distills the magnesium, the magnesium chloride, and the metal sub-chlorides; the steps of: recovering fractionally distilled vapors of magnesium chloride and metal sub-chlorides from a sponge refractory metal; separately condensing the vapors as separately recovered; and recycling the separately recovered magnesium at a purity of at least about 96%

  13. Observations of Metallic Species in Mercury's Exosphere

    Science.gov (United States)

    Killen, Rosemary M.; Potter, Andrew E.; Vervack, Ronald J., Jr.; Bradley, E. Todd; McClintock, William E.; Anderson, Carrie M.; Burger, Matthew H.

    2010-01-01

    From observations of the metallic species sodium (Na), potassium (K), and magnesium (Mg) in Mercury's exosphere, we derive implications for source and loss processes. All metallic species observed exhibit a distribution and/or line width characteristic of high to extreme temperature - tens of thousands of degrees K. The temperatures of refractory species, including magnesium and calcium, indicate that the source process for the atoms observed in the tail and near-planet exosphere are consistent with ion sputtering and/or impact vaporization of a molecule with subsequent dissociation into the atomic form. The extended Mg tail is consistent with a surface abundance of 5-8% Mg by number, if 30% of impact-vaporized Mg remains as MgO and half of the impact vapor condenses. Globally, ion sputtering is not a major source of Mg, but locally the sputtered source can be larger than the impact vapor source. We conclude that the Na and K in Mercury's exosphere can be derived from a regolith composition similar to that of Luna 16 soil (or Apollo 17 orange glass), in which the abundance by number is 0.0027 (0.0028) for Na and 0.0006 (0.0045) for K.

  14. Copper-vapor-catalyzed chemical vapor deposition of graphene on dielectric substrates

    Science.gov (United States)

    Yang, Chao; Wu, Tianru; Wang, Haomin; Zhang, Xuefu; Shi, Zhiyuan; Xie, Xiaoming

    2017-07-01

    Direct synthesis of high-quality graphene on dielectric substrates is important for its application in electronics. In this work, we report the process of copper-vapor-catalyzed chemical vapor deposition of high-quality and large graphene domains on various dielectric substrates. The copper vapor plays a vital role on the growth of transfer-free graphene. Both single-crystal domains that are much larger than previous reports and high-coverage graphene films can be obtained by adjusting the growth duration. The quality of the obtained graphene was verified to be comparable with that of graphene grown on Cu foil. The progress reported in this work will aid the development of the application of transfer-free graphene in the future.

  15. Local CFD kinetic model of cadmium vaporization during fluid bed incineration of municipal solid waste

    Energy Technology Data Exchange (ETDEWEB)

    Soria, J. [Instituto Multidisciplinario de Investigación y Desarrollo de la Patagonia Norte (IDEPA, CONICET-UNCo) y Facultad de Ingeniería, Universidad Nacional del Comahue, Buenos Aires 1400, 8300 Neuquén (Argentina); Laboratoire Procédés, Matériaux et Energie Solaire (CNRS-PROMES), 7 Rue du Four Solaire, Odeillo, 66120 Font-Romeu (France); Gauthier, D., E-mail: Daniel.Gauthier@promes.cnrs.fr [Laboratoire Procédés, Matériaux et Energie Solaire (CNRS-PROMES), 7 Rue du Four Solaire, Odeillo, 66120 Font-Romeu (France); Falcoz, Q.; Flamant, G. [Laboratoire Procédés, Matériaux et Energie Solaire (CNRS-PROMES), 7 Rue du Four Solaire, Odeillo, 66120 Font-Romeu (France); Mazza, G. [Instituto Multidisciplinario de Investigación y Desarrollo de la Patagonia Norte (IDEPA, CONICET-UNCo) y Facultad de Ingeniería, Universidad Nacional del Comahue, Buenos Aires 1400, 8300 Neuquén (Argentina)

    2013-03-15

    Highlights: ► A 2-D local CFD model for simulating the Cd vaporization process is presented. ► It includes a kinetic expression of Cd vaporization into the incineration process. ► Pyrolysis, volatiles’ combustion and residual carbon combustion are also taken into account. ► It fits very well the experimental results obtained on a lab-scale fluidized bed reported in literature. ► It also compares favorably with a model developed previously by the group. -- Abstract: The emissions of heavy metals during incineration of Municipal Solid Waste (MSW) are a major issue to health and the environment. It is then necessary to well quantify these emissions in order to accomplish an adequate control and prevent the heavy metals from leaving the stacks. In this study the kinetic behavior of Cadmium during Fluidized Bed Incineration (FBI) of artificial MSW pellets, for bed temperatures ranging from 923 to 1073 K, was modeled. FLUENT 12.1.4 was used as the modeling framework for the simulations and implemented together with a complete set of user-defined functions (UDFs). The CFD model combines the combustion of a single solid waste particle with heavy metal (HM) vaporization from the burning particle, and it takes also into account both pyrolysis and volatiles’ combustion. A kinetic rate law for the Cd release, derived from the CFD thermal analysis of the combusting particle, is proposed. The simulation results are compared with experimental data obtained in a lab-scale fluidized bed incinerator reported in literature, and with the predicted values from a particulate non-isothermal model, formerly developed by the authors. The comparison shows that the proposed CFD model represents very well the evolution of the HM release for the considered range of bed temperature.

  16. Molecular dynamics study of the vaporization of an ionic drop.

    Science.gov (United States)

    Galamba, N

    2010-09-28

    The melting of a microcrystal in vacuum and subsequent vaporization of a drop of NaCl were studied through molecular dynamics simulations with the Born-Mayer-Huggins-Tosi-Fumi rigid-ion effective potential. The vaporization was studied for a single isochor at increasing temperatures until the drop completely vaporized, and gaseous NaCl formed. Examination of the vapor composition shows that the vapor of the ionic drop and gaseous NaCl are composed of neutral species, the most abundant of which, ranging from simple NaCl monomers (ion pairs) to nonlinear polymers, (Na(n)Cl(n))(n=2-4). The enthalpies of sublimation, vaporization, and dissociation of the different vapor species are found to be in reasonable agreement with available experimental data. The decrease of the enthalpy of vaporization of the vapor species, with the radius of the drop decrease, accounts for a larger fraction of trimers and tetramers than that inferred from experiments. Further, the rhombic dimer is significantly more abundant than its linear isomer although the latter increases with the temperature. The present results suggest that both trimers and linear dimers may be important to explain the vapor pressure of molten NaCl at temperatures above 1500 K.

  17. Molecular dynamics study of the vaporization of an ionic drop

    Science.gov (United States)

    Galamba, N.

    2010-09-01

    The melting of a microcrystal in vacuum and subsequent vaporization of a drop of NaCl were studied through molecular dynamics simulations with the Born-Mayer-Huggins-Tosi-Fumi rigid-ion effective potential. The vaporization was studied for a single isochor at increasing temperatures until the drop completely vaporized, and gaseous NaCl formed. Examination of the vapor composition shows that the vapor of the ionic drop and gaseous NaCl are composed of neutral species, the most abundant of which, ranging from simple NaCl monomers (ion pairs) to nonlinear polymers, (NanCln)n=2-4. The enthalpies of sublimation, vaporization, and dissociation of the different vapor species are found to be in reasonable agreement with available experimental data. The decrease of the enthalpy of vaporization of the vapor species, with the radius of the drop decrease, accounts for a larger fraction of trimers and tetramers than that inferred from experiments. Further, the rhombic dimer is significantly more abundant than its linear isomer although the latter increases with the temperature. The present results suggest that both trimers and linear dimers may be important to explain the vapor pressure of molten NaCl at temperatures above 1500 K.

  18. Effect of vapor-phase oxygen on chemical vapor deposition growth of graphene

    Science.gov (United States)

    Terasawa, Tomo-o.; Saiki, Koichiro

    2015-03-01

    To obtain a large-area single-crystal graphene, chemical vapor deposition (CVD) growth on Cu is considered the most promising. Recently, the surface oxygen on Cu has been found to suppress the nucleation of graphene. However, the effect of oxygen in the vapor phase was not elucidated sufficiently. Here, we investigate the effect of O2 partial pressure (PO2) on the CVD growth of graphene using radiation-mode optical microscopy. The nucleation density of graphene decreases monotonically with PO2, while its growth rate reaches a maximum at a certain pressure. Our results indicate that PO2 is an important parameter to optimize in the CVD growth of graphene.

  19. Assessing elemental mercury vapor exposure from cultural and religious practices.

    Science.gov (United States)

    Riley, D M; Newby, C A; Leal-Almeraz, T O; Thomas, V M

    2001-08-01

    Use of elemental mercury in certain cultural and religious practices can cause high exposures to mercury vapor. Uses include sprinkling mercury on the floor of a home or car, burning it in a candle, and mixing it with perfume. Some uses can produce indoor air mercury concentrations one or two orders of magnitude above occupational exposure limits. Exposures resulting from other uses, such as infrequent use of a small bead of mercury, could be well below currently recognized risk levels. Metallic mercury is available at almost all of the 15 botanicas visited in New York, New Jersey, and Pennsylvania, but botanica personnel often deny having mercury for sale when approached by outsiders to these religious and cultural traditions. Actions by public health authorities have driven the mercury trade underground in some locations. Interviews indicate that mercury users are aware that mercury is hazardous, but are not aware of the inhalation exposure risk. We argue against a crackdown by health authorities because it could drive the practices further underground, because high-risk practices may be rare, and because uninformed government intervention could have unfortunate political and civic side effects for some Caribbean and Latin American immigrant groups. We recommend an outreach and education program involving religious and community leaders, botanica personnel, and other mercury users.

  20. High-frequency strontium vapor laser for biomedical applications

    Science.gov (United States)

    Hvorostovsky, A.; Kolmakov, E.; Kudashev, I.; Redka, D.; Kancer, A.; Kustikova, M.; Bykovskaya, E.; Mayurova, A.; Stupnikov, A.; Ruzankina, J.; Tsvetkov, K.; Lukyanov, N.; Paklinov, N.

    2018-02-01

    Sr-laser with high pulse repetition rate and high peak radiation power is a unique tool for studying rapidly occurring processes in time (plasma diagnostics, photoablation, etc.). In addition, the study of the frequency characteristics of the active medium of the laser helps to reveal the physics of the formation of an inverse medium in metal vapor lasers. In this paper, an experimental study of an Sr-laser with an active volume of 5.8 cm3 in the pulse repetition frequency range from 25 to 200 kHz is carried out, and a comparison with the frequency characteristics of media with large active volumes is given. We considered the frequency characteristics of the active medium in two modes: at a constant energy in the excitation pulse CU2 / 2 and at a constant average power consumed by the rectifier. In the presented work with a small-volume GRT using the TASITR-5/12 TASITRON switch, a laser was generated for Pairs of strontium at a CSF of 200 kHz. The behavior of the characteristics of the generation lines of 6.456 μm, 1 μm, and 3 μm at increased repetition frequencies is considered. Using the example of large-volume GRT, it is shown that tubes with a large active volume increase their energy characteristics with the growth of the CSF. The possibility of laser operation at pulse repetition rates above 200 kHz is shown.