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Sample records for mev si ion

  1. Si-nanoparticle synthesis using ion implantation and MeV ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Chulapakorn, T.; Wolff, M.; Primetzhofer, D.; Possnert, G. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J. [Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden); Hallen, A. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

    2015-12-15

    A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO{sub 2} matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO{sub 2} by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV {sup 127}I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

    Science.gov (United States)

    Budak, S.; Heidary, K.; Johnson, R. B.; Colon, T.; Muntele, C.; Ila, D.

    2014-08-01

    The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S2σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

  3. MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

    Energy Technology Data Exchange (ETDEWEB)

    Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Heidary, K. [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Johnson, R.B.; Colon, T. [Department of Physics, Alabama A and M University, Huntsville, AL (United States); Muntele, C. [Cygnus Scientific Services, Huntsville, AL (United States); Ila, D. [Department of Physics, Fayetteville St. University, Fayetteville, NC (United States)

    2014-08-15

    The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S{sup 2}σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

  4. 120 MeV Ag ion induced effects in Au/HfO2/Si MOSCAPs

    Science.gov (United States)

    Manikanthababu, N.; Prajna, K.; Pathak, A. P.; Rao, S. V. S. Nageswara

    2018-05-01

    HfO2/Si thinfilms were deposited by RF sputtering technique. 120 MeV Ag ion irradiation has been used to study the electrical properties of Au/HfO2/Si MOSCAPs. SHI (120 MeV Ag) induced annealing, defects creation and intermixing effects on the electrical properties of these systems have been studied. Here, we have observed that the high electronic excitation can cause a significant reduction of leakage currents in these MOSCAP devices. Various quantum mechanical tunneling phenomenon has been observed from the I-V characteristics.

  5. Mechanical properties of MeV ion-irradiated SiC/SiC composites characterized by indentation technique

    International Nuclear Information System (INIS)

    Park, J.Y.; Park, K.H.; Kim, W.; Kishimoto, H.; Kohyama, A.

    2007-01-01

    Full text of publication follows: SiC/SiC composites have been considered as a structural material for advanced fusion concepts. In the core of fusion reactor, those SiC/SiC composites are experienced the complex attacks such as strong neutron, high temperature and transmuted gases. One of the vital data for designing the SiC/SiC composites to the fusion reactor is mechanical properties under the severe neutron irradiation. In this work, various SiC/SiC composites were prepared by the different fabrication processes like CVI (chemical vapor infiltration), WA-CVI (SiC whisker assisted CVI) and hot-pressed method. The expected neutron irradiation was simulated by a silicon self-ion irradiation at a DuET facility; Dual-beam for Energy Technologies, Kyoto University. The irradiation temperature were 600 deg. C and 1200 deg. C, and the irradiation does were 5 dpa and 20 dpa, respectively. The 5.1 MeV Si ions were irradiated to the intrinsic CVI-SiC, SiC whisker reinforced SiC and SiC composites produced by hot-press method. The mechanical properties like hardness, elastic modulus and fracture toughness were characterized by an indentation technique. The ion irradiation caused the increase of the hardness and fracture toughness, which was dependent on the irradiation temperature. SiC whisker reinforcement in the SiC matrix accelerated the increase of the fracture toughness by the ion irradiation. For SiC/SiC composites after the ion irradiation, this work will provide the additional data for the mechanical properties as well as the effect of SiC whisker reinforcement. (authors)

  6. Enhanced photoelectrochemical properties of 100 MeV Si8+ ion irradiated barium titanate thin films

    International Nuclear Information System (INIS)

    Solanki, Anjana; Choudhary, Surbhi; Satsangi, Vibha R.; Shrivastav, Rohit; Dass, Sahab

    2013-01-01

    Highlights: ► Effect of 100 MeV Si 8+ ion irradiation on photoelectrochemical (PEC) properties of BaTiO 3 thin films was studied. ► Films were deposited on Indium doped Tin Oxide (ITO) coated glass by sol–gel spin coating technique. ► Optimal irradiation fluence for best PEC response was 5 × 10 11 ion cm −2 . ► Maximum photocurrent density was observed to be 0.7 mA cm −2 at 0.4 V/SCE. ► Enhanced photo-conversion efficiency was due to maximum negative flatband potential, donor density and lowest resistivity. -- Abstract: Effects of high electronic energy deposition on the structure, surface topography, optical property and photoelectrochemical behavior of barium titanate (BaTiO 3 ) thin films were investigated by irradiating films with 100 MeV Si 8+ ions at different ion fluences in the range of 1 × 10 11 –2 × 10 13 ions cm −2 . BaTiO 3 thin films were deposited on indium tin oxide coated glass substrate by sol gel spin coating method. Irradiation induced modifications in the films were analyzed using the results from XRD, SEM, cross sectional SEM, AFM and UV–Vis spectrometry. Maximum photocurrent density of 0.7 mA cm −2 at 0.4 V/SCE and applied bias hydrogen conversion efficiency (ABPE) of 0.73% was observed for BaTiO 3 film irradiated at 5 × 10 11 ions cm −2 , which can be attributed to maximum negative value of the flatband potential and donor density and lowest resistivity

  7. A comparative study of 30MeV boron4+ and 60MeV oxygen8+ ion irradiated Si NPN BJTs

    International Nuclear Information System (INIS)

    Kumar, M. Vinay; Krishnaveni, S.; Yashoda, T.; Dinesh, C. M.; Krishnakumar, K. S.; Jayashree, B.; Ramani

    2015-01-01

    The impact of 30MeV boron 4+ and 60MeV oxygen 8+ ion irradiation on electrical characteristics of 2N3773 Si NPN Bipolar junction transistors (BJTs) is reported in the present study. The transistors were decapped and irradiated at room temperature. Gummel characteristics, DC current gain and Capacitance-voltage (C-V) characteristics were studied before and after irradiation at different fluences. DC current gain has decreased significantly in both boron and oxygen ion irradiation. Also the value of capacitance decreased 3-4 times with increase in fluence. Both 30MeV boron ion and 60MeV oxygen ion induced similar extent of degradation in electrical characteristics of the transistor

  8. 75 MeV boron ion irradiation studies on Si PIN photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Prabhakara Rao, Y.P.; Praveen, K.C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India); Rejeena Rani, Y. [Integrated Circuits Division, Bharat Electronics Limited, Bangalore 560013, Karnataka (India); Tripathi, Ambuj [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gnana Prakash, A.P., E-mail: gnanap@hotmail.com [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India)

    2013-12-01

    The highly sensitive silicon PIN photodiodes were fabricated to use in radiation environments. The Si PIN photodiodes are coated with 150 nm silicon dioxide (SiO{sub 2}) as anti-reflective (AR) coating. The presence of AR coating on the performance of irradiated PIN photodiodes is studied up to a total dose of 10 Mrad. The effects of 75 MeV boron (B{sup 5+}) ions and {sup 60}Co gamma radiation on the I–V, C–V and spectral responses of PIN photodiodes were studied systematically to understand the radiation tolerance of the devices. The 75 MeV B{sup 5+} irradiation results are compared with {sup 60}Co gamma irradiated results in the same dose range for 1 mm × 1 mm and 10 mm × 10 mm active area PIN photodiodes. The irradiation results show that the ion irradiated PIN photodiodes show more degradation when compared {sup 60}Co gamma irradiated devices. The irradiation results are presented in this paper and the possible mechanism behind the degradation of photodiodes is also discussed in the paper.

  9. Structure Characterization of Modified Polyimide Films Irradiated by 2 MeV Si Ions

    International Nuclear Information System (INIS)

    Tian-Xiang, Chen; Shu-De, Yao; Kun, Wang; Huan, Wang; Zhi-Bo, Ding; Di, Chen

    2009-01-01

    Structures of polyimide (6051) films modified by irradiation of 2.0 MeV Si ions with different fluences are studied in detail. Variations of the functional groups in polyimide are investigated by attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) and Raman spectroscopy. The results indicate that the functional groups can be destroyed gradually with the increasing ion fluence. The variations of structure and element contents are characterized by x-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and x-ray photoelectron spectroscopy (XPS). The results indicate that the contents of N and O decrease significantly compared with the original samples, some graphite-like and carbon-rich phases are formed in the process of irradiation

  10. Ion beam synthesis of IrSi3 by implantation of 2 MeV Ir ions

    International Nuclear Information System (INIS)

    Sjoreen, T.P.; Chisholm, M.F.; Hinneberg, H.J.

    1992-11-01

    Formation of a buried IrSi 3 layer in (111) oriented Si by ion implantation and annealing has been studied at an implantation energy of 2 MeV for substrate temperatures of 450--550C. Rutherford backscattering (RBS), ion channeling and cross-sectional transmission electron microscopy showed that a buried epitaxial IrSi 3 layer is produced at 550C by implanting ≥ 3.4 x 10 17 Ir/cm 2 and subsequently annealing for 1 h at 1000C plus 5 h at 1100C. At a dose of 3.4 x 10 17 Ir/cm 2 , the thickness of the layer varied between 120 and 190 nm and many large IrSi 3 precipitates were present above and below the film. Increasing the dose to 4.4 x 10 17 Ir/cm 2 improved the layer uniformity at the expense of increased lattice damage in the overlying Si. RBS analysis of layer formation as a function of substrate temperature revealed the competition between the mechanisms for optimizing surface crystallinity vs. IrSi 3 layer formation. Little apparent substrate temperature dependence was evident in the as-implanted state but after annealing the crystallinity of the top Si layer was observed to deteriorate with increasing substrate temperature while the precipitate coarsening and coalescence improved

  11. MeV ion irradiation effects on the luminescence properties of Si-implanted SiO{sub 2}-thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chulapakorn, T.; Primetzhofer, D. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J.; Hallen, A. [Royal Institute of Technology (KTH), School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

    2016-12-15

    The effects of MeV heavy ion irradiation at varying fluence and flux on excess Si, introduced in SiO{sub 2} by keV ion implantation, are investigated by photoluminescence (PL). From the PL peak wavelength (λ) and decay lifetime (τ), two PL sources are distinguished: (i) quasi-direct recombination of excitons of Si-nanoparticles (SiNPs), appearing after thermal annealing (λ > 720 nm, τ ∝ μs), and (ii) fast-decay PL, possibly due to oxide-related defects (λ ∝ 575-690 nm, τ ∝ ns). The fast-decay PL (ii) observed before and after ion irradiation is induced by ion implantation. It is found that this fast-decay luminescence decreases for higher irradiation fluence of MeV heavy ions. After thermal annealing (forming SiNPs), the SiNP PL is reduced for samples irradiated by MeV heavy ions but found to stabilize at higher level for higher irradiation flux; the (ii) band vanishes as a result of annealing. The results are discussed in terms of the influence of electronic and nuclear stopping powers. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Effects of MeV Si ions bombardment on the thermoelectric generator from SiO{sub 2}/SiO{sub 2} + Cu and SiO{sub 2}/SiO{sub 2} + Au nanolayered multilayer films

    Energy Technology Data Exchange (ETDEWEB)

    Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Chacha, J., E-mail: chacha_john79@hotmail.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Smith, C., E-mail: cydale@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States); Pugh, M., E-mail: marcuspughp@yahoo.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Colon, T. [Department of Mechanical Engineering, Alabama A and M University, Normal, AL (United States); Heidary, K., E-mail: kaveh.heidary@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Johnson, R.B., E-mail: barry@w4wb.com [Department of Physics, Alabama A and M University, Normal, AL (United States); Ila, D., E-mail: ila@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States)

    2011-12-15

    The defects and disorder in the thin films caused by MeV ions bombardment and the grain boundaries of these nanoscale clusters increase phonon scattering and increase the chance of an inelastic interaction and phonon annihilation. We prepared the thermoelectric generator devices from 100 alternating layers of SiO{sub 2}/SiO{sub 2} + Cu multi-nano layered superlattice films at the total thickness of 382 nm and 50 alternating layers of SiO{sub 2}/SiO{sub 2} + Au multi-nano layered superlattice films at the total thickness of 147 nm using the physical vapor deposition (PVD). Rutherford Backscattering Spectrometry (RBS) and RUMP simulation have been used to determine the stoichiometry of the elements of SiO{sub 2}, Cu and Au in the multilayer films and the thickness of the grown multi-layer films. The 5 MeV Si ions bombardments have been performed using the AAMU-Center for Irradiation of Materials (CIM) Pelletron ion beam accelerator to make quantum (nano) dots and/or quantum (quantum) clusters in the multilayered superlattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity. To characterize the thermoelectric generator devices before and after Si ion bombardments we have measured Seebeck coefficient, cross-plane electrical conductivity, and thermal conductivity in the cross-plane geometry for different fluences.

  13. Effects of Mev Si Ions and Thermal Annealing on Thermoelectric and Optical Properties of SiO2/SiO2+Ge Multi-nanolayer thin Films

    Science.gov (United States)

    Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.

    Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.

  14. Alpha-heavy-ion angular correlations from /sup 28/Si + /sup 12/C. [84 to 91. 5 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Ost, R; Cole, A J [Institut des Sciences Nucleaires, 38 - Grenoble (France); Clover, M R; Fulton, B R; Sikora, B [Rochester Univ., NY (USA). Nuclear Structure Research Lab.

    1980-06-01

    Alpha particles have been measured in coincidence with heavy recoil nuclei from the /sup 28/Si + /sup 12/C reaction. At Esub(lab) = 87 MeV angular correlations for alphas between 15/sup 0/ and 55/sup 0/ and heavy ions at angles -9/sup 0/, -12/sup 0/ and -15/sup 0/ have been taken. An excitation function of coincidence events with THETAsub(..cap alpha..) = 30/sup 0/ and THETAsub(HI) = -12/sup 0/ has been measured for 84 MeV < Esub(lab) < 91.5 MeV. The results are well described by a statistical-model calculation for compound nucleus decay. No evidence is found for additional processes.

  15. Energy loss and straggling of MeV Si ions in gases

    Energy Technology Data Exchange (ETDEWEB)

    Vockenhuber, C., E-mail: vockenhuber@phys.ethz.ch [Laboratory of Ion Beam Physics, ETH Zurich, Otto-Stern-Weg 5, 8093 Zurich (Switzerland); Arstila, K. [Department of Physics, University of Jyväskylä, 40014 Jyväskylä (Finland); Jensen, J. [Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden); Julin, J.; Kettunen, H.; Laitinen, M.; Rossi, M.; Sajavaara, T. [Department of Physics, University of Jyväskylä, 40014 Jyväskylä (Finland); Thöni, M. [Laboratory of Ion Beam Physics, ETH Zurich, Otto-Stern-Weg 5, 8093 Zurich (Switzerland); Whitlow, H.J. [Institut des Microtechnologies Appliquées Arc, Haute Ecole Arc Ingénierie, 2300 La Chaux-de-Fonds (Switzerland)

    2017-01-15

    We present measurements of energy loss and straggling of Si ions in gases. An energy range from 0.5 to 12 MeV/u was covered using the 6 MV EN tandem accelerator at ETH Zurich, Switzerland, and the K130 cyclotron accelerator facility at the University of Jyväskylä, Finland. Our energy-loss data compare well with calculation based on the SRIM and PASS code. The new straggling measurements support a pronounced peak in He gas at around 4 MeV/u predicted by recent theoretical calculations. The straggling curve structure in the other gases (N{sub 2}, Ne, Ar, Kr) is relatively flat in the covered energy range. Although there is a general agreement between the straggling data and the theoretical calculations, the experimental uncertainties are too large to confirm or exclude the predicted weak multi-peak structure in the energy-loss straggling.

  16. 125 MeV Si 9+ ion irradiation of calcium phosphate thin film coated by rf-magnetron sputtering technique

    Science.gov (United States)

    Elayaraja, K.; Joshy, M. I. Ahymah; Suganthi, R. V.; Kalkura, S. Narayana; Palanichamy, M.; Ashok, M.; Sivakumar, V. V.; Kulriya, P. K.; Sulania, I.; Kanjilal, D.; Asokan, K.

    2011-01-01

    Titanium substrate was coated with hydroxyapatite by radiofrequency magnetron sputtering (rf-magnetron sputtering) technique and subjected to swift heavy ion (SHI) irradiation of 125 MeV with Si 9+ at fluences of 1 × 10 10, 1 × 10 11 and 1 × 10 12 ions/cm 2. The glancing incidence X-ray diffraction (GIXRD) analysis confirmed the HAp phase of the irradiated film. There was a considerable decrease in crystallinity and particle size after irradiation. In addition, DRS-UV reflectance spectra revealed a decrease in optical band gap ( Eg) from 5.2 to 4.6 eV. Wettability of biocompatible materials plays an important role in biological cells proliferation for tissue engineering, drug delivery, gene transfer and bone growth. HAp thin films irradiated with 1 × 10 11 ions/cm 2 fluence showed significant increase in wettability. While the SHI irradiated samples exhibited enhanced bioactivity, there was no significant variation in cell viability. Surface roughness, pores and average particle size were analyzed by atomic force microscopy (AFM).

  17. Fragment ion distribution in charge-changing collisions of 2-MeV Si ions with C60

    Science.gov (United States)

    Itoh, A.; Tsuchida, H.; Miyabe, K.; Majima, T.; Nakai, Y.

    2001-09-01

    We have measured positive fragment ions produced in collisions of 2 MeV Siq+ (q=0, 1, 2, 4) projectiles with a C60 molecular target. The measurement was performed with a time-of-flight coincidence method between fragment ions and charge-selected outgoing projectiles. For all the charge-changing collisions investigated here, the mass distribution of small fragment ions C+n (n=1-12) can be approximated fairly well by a power-law form of n-λ as a function of the cluster size n. The power λ derived from each mass distribution is found to change strongly according to different charge-changing collisions. As a remarkable experimental finding, the values of λ(loss) in electron loss collisions are almost the same for the same final charge states k irrespective of the initial charge q, exhibiting a nearly perfect linear relationship with k. We also performed calculations of the projectile ionization on the basis of the semiclassical approximation and obtained inelastic energy deposition for individual collision processes. The estimated energy deposition is found to have a simple correlation with the experimentally determined values of λ(loss).

  18. Correlation between the structure modification and conductivity of 3 MeV Si ion-irradiated polyimide

    International Nuclear Information System (INIS)

    Sun Youmei; Zhu Zhiyong; Li Changlin

    2002-01-01

    The surface modification of the polyimide (PI/Kapton) films was carried out by 3 MeV Si + implantation to fluences ranging from 1x10 12 to 1.25x10 15 ions/cm 2 . Fourier transform infrared (FTIR), Raman and ultraviolet/visible (UV/Vis) spectroscopes were employed to investigate the chemical degradation of function groups in the irradiated layer. FTIR results show that the absorbance of typical function group decreases exponentially as a function of fluence. The damage cross-section of typical bonds of PI was evaluated from the FTIR spectra. Raman analysis shows the absorbed dose for destruction of all function groups is above 218 MGy. The red shifting of the absorption edge from UV to visible reveals the band gap closing which results from increase of the cluster size. The production efficiency of the chromophores was discussed according to UV/Vis analysis. Irradiation dramatically enhances the electrical conductivity and the sheet resistivity in our experiment descends nearly 10 orders of magnitude compared with its intrinsic value

  19. Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

    International Nuclear Information System (INIS)

    Hlatshwayo, T T; Kuhudzai, R J; Njoroge, E G; Malherbe, J B; O’Connell, J H; Skuratov, V A; Msimanga, M

    2015-01-01

    The effect of swift heavy ion (Xe 167 MeV) irradiation on polycrystalline SiC individually implanted with 360 keV Kr and Xe ions at room temperature to fluences of 2  ×  10 16 cm −2 and 1  ×  10 16 cm −2 respectively, was investigated using transmission electron microscopy (TEM), Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Implanted specimens were each irradiated with 167 MeV Xe +26 ions to a fluence of 8.3  ×  10 14 cm −2 at room temperature. It was observed that implantation of 360 keV Kr and Xe ions individually at room temperature amorphized the SiC from the surface up to a depth of 186 and 219 nm respectively. Swift heavy ion (SHI) irradiation reduced the amorphous layer by about 27 nm and 30 nm for the Kr and Xe samples respectively. Interestingly, the reduction in the amorphous layer was accompanied by the appearance of randomly oriented nanocrystals in the former amorphous layers after SHI irradiation in both samples. Previously, no similar nanocrystals were observed after SHI irradiations at electron stopping powers of 33 keV nm −1 and 20 keV nm −1 to fluences below 10 14 cm −2 . Therefore, our results suggest a fluence threshold for the formation of nanocrystals in the initial amorphous SiC after SHI irradiation. Raman results also indicated some annealing of radiation damage after swift heavy ion irradiation and the subsequent formation of small SiC crystals in the amorphous layers. No diffusion of implanted Kr and Xe was observed after swift heavy ion irradiation. (paper)

  20. Effect of 100 MeV Ag{sup +7} ion irradiation on the bulk and surface magnetic properties of Co–Fe–Si thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hysen, T., E-mail: hysenthomas@gmail.com [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India); Department of Physics, Christian College, Chengannur, Kerala 689 122 (India); Geetha, P. [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India); Al-Harthi, Salim; Al-Omari, I.A. [Department of Physics, College of Science, Sultan Qaboos University, Al Khod 123 (Oman); Lisha, R. [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India); Ramanujan, R.V. [School of Materials Science and Engineering, Nanyang Technological University, Singapore 639 798 (Singapore); Sakthikumar, D. [Graduate School of Interdisciplinary New Science, Toyo University, Kawagoe (Japan); Avasthi, D.K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Anantharaman, M.R., E-mail: mra@cusat.ac.in [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India)

    2014-12-15

    Thin films of Co–Fe–Si were vacuum evaporated on pre-cleaned float glass substrates employing thermal evaporation. The films were subsequently irradiated with 100 MeV Ag{sup +7} ions at fluences of 1×10{sup 11}, 1×10{sup 12} and 1×10{sup 13} ions/cm{sup 2}. The pristine and irradiated samples were subjected to surface analysis using Atomic Force Microscopy (AFM), Vibrating Sample Magnetometry (VSM) and Magneto Optic Kerr Effect (MOKE) measurements. The as deposited film has a root mean square roughness (Rq) of 8.9 nm and an average roughness of (Ra) 5.6 nm. Irradiation of the as deposited films with 100 MeV Ag{sup 7+} ions modifies the surface morphology. Irradiating with ions at fluences of 1×10{sup 11} ions/cm{sup 2} smoothens the mesoscopic hill-like structures, and then, at 1×10{sup 12} ions/cm{sup 2} new surface structures are created. When the fluence is further increased to 1×10{sup 13} ions/cm{sup 2} an increase in the surface roughness is observed. The MOKE loop of as prepared film indicated a squareness ratio of 0.62. As the film is irradiated with fluences of 1×10{sup 11} ions/cm{sup 2}, 1×10{sup 12} ions/cm{sup 2} and 1×10{sup 13} ions/cm{sup 2} the squareness ratio changes to 0.76, 0.8 and 0.86 respectively. This enhancement in squareness ratio towards 1 is a typical feature when the exchange interaction starts to dominates the inherent anisotropies in the system. The variation in surface magnetisation is explained based on the variations in surface roughness with swift heavy ion (SHI) irradiation. - Highlights: • We have irradiated thermally evaporated Co–Fe–Si thin films on glass substrate with 100 MeV Ag{sup +7} ions using the 15 UD Pelletron Accelerator at IUAC, New Delhi, India. • Surface morphology and magnetic characteristics of the films can be altered with ion irradiation. • It was observed that the variation in surface magnetic properties correlates well with the changes in surface morphology, further reiterating the

  1. High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

    Science.gov (United States)

    Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

    2018-03-01

    The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

  2. Strain evolution in Si substrate due to implantation of MeV ion observed by extremely asymmetric x-ray diffraction

    International Nuclear Information System (INIS)

    Emoto, T.; Ghatak, J.; Satyam, P. V.; Akimoto, K.

    2009-01-01

    We studied the strain introduced in a Si(111) substrate due to MeV ion implantation using extremely asymmetric x-ray diffraction and measured the rocking curves of asymmetrical 113 diffraction for the Si substrates implanted with a 1.5 MeV Au 2+ ion at fluence values of 1x10 13 , 5x10 13 , and 1x10 14 /cm 2 . The measured curves consisted of a bulk peak and accompanying subpeak with an interference fringe. The positional relationship of the bulk peak to the subpeak and the intensity variation of those peaks with respect to the wavelengths of the x rays indicated that crystal lattices near the surface were strained; the lattice spacing of surface normal (111) planes near the surface was larger than that of the bulk. Detailed strain profiles along the depth direction were successfully estimated using a curve-fitting method based on Darwin's dynamical diffraction theory. Comparing the shapes of resultant strain profiles, we found that a strain evolution rapidly occurred within a depth of ∼300 nm at fluence values between 1x10 13 and 5x10 13 /cm 2 . This indicates that formation of the complex defects progressed near the surface when the fluence value went beyond a critical value between 1x10 13 and 5x10 13 /cm 2 and the defects brought a large strain to the substrate.

  3. Quantitative approach to relate dielectric constant studies with TSDC studies of 50 MeV Si ion irradiated kapton-H polymide

    International Nuclear Information System (INIS)

    Quamara, J.K.; Garg, Maneesha; Sridharbabu, Y.; Prabhavathi, T.

    2003-01-01

    Temperature and frequency dependent dielectric behaviour has been investigated for pristine and swift heavy ion irradiated (Si ion, 50 MeV energy) kapton-H polyimide in the temperature range of 30 to 250 deg C at frequencies 120 Hz, 1 kHz, 10 kHz and 100 kHz respectively. The dielectric relaxation behaviour of the same samples was also studied using thermally stimulated discharge current (TSDC) technique. A quantitative approach is developed using a well-known Clausius Mossotti equation to relate the TSDC findings to the dielectric constant studies. An overall increase in the dielectric constant of the irradiated samples are also in conformity to the TSDC findings. (author)

  4. INCLUSIVE SYSTEMATICS FOR SI-28+SI-28 REACTIONS BETWEEN 20 AND 35 MEV PER NUCLEON

    NARCIS (Netherlands)

    BOX, PF; GRIFFIOEN, KA; DECOWSKI, P; BOOTSMA, T; GIERLIK, E; VANNIEUWENHUIZEN, GJ; TWENHOFEL, C; KAMERMANS, R; WILSCHUT, HW; GIORNI, A; MORAND, C; DEMEYER, A; GUINET, D

    Inclusive velocity spectra of heavy ions produced in the Si-28 + Si-28 reaction at 22, 26, 30, and 35 MeV per nucleon were measured and decomposed into peripheral and central components using an analytical moving-source parametrization. The persistence of incomplete fusion followed by evaporation

  5. Hydrogen loss and its improved retention in hydrogen plasma treated a-SiNx:H films: ERDA study with 100 MeV Ag7+ ions

    Science.gov (United States)

    Bommali, R. K.; Ghosh, S.; Khan, S. A.; Srivastava, P.

    2018-05-01

    Hydrogen loss from a-SiNx:H films under irradiation with 100 MeV Ag7+ ions using elastic recoil detection analysis (ERDA) experiment is reported. The results are explained under the basic assumptions of the molecular recombination model. The ERDA hydrogen concentration profiles are composed of two distinct hydrogen desorption processes, limited by rapid molecular diffusion in the initial stages of irradiation, and as the fluence progresses a slow process limited by diffusion of atomic hydrogen takes over. Which of the aforesaid processes dominates, is determined by the continuously evolving Hydrogen concentration within the films. The first process dominates when the H content is high, and as the H concentration falls below a certain threshold (Hcritical) the irradiation generated H radicals have to diffuse through larger distances before recombining to form H2, thereby significantly bringing down the hydrogen evolution rate. The ERDA measurements were also carried out for films treated with low temperature (300 °C) hydrogen plasma annealing (HPA). The HPA treated films show a clear increase in Hcritical value, thus indicating an improved diffusion of atomic hydrogen, resulting from healing of weak bonds and passivation of dangling bonds. Further, upon HPA films show a significantly higher H concentration relative to the as-deposited films, at advanced fluences. These results indicate the potential of HPA towards improved H retention in a-SiNx:H films. The study distinguishes clearly the presence of two diffusion processes in a-SiNx:H whose diffusion rates differ by an order of magnitude, with atomic hydrogen not being able to diffuse further beyond ∼ 1 nm from the point of its creation.

  6. High performance SiC detectors for MeV ion beamsgenerated by intense pulsed laser plasmas

    Czech Academy of Sciences Publication Activity Database

    Cutroneo, M.; Musumeci, P.; Zimbone, M.; Torrisi, L.; La Via, F.; Margarone, Daniele; Velyhan, Andriy; Ullschmied, Jiří; Calcagno, L.

    2013-01-01

    Roč. 28, č. 1 (2013), s. 87-93 ISSN 0884-2914 R&D Projects: GA MŠk ED1.1.00/02.0061; GA MŠk EE.2.3.20.0087 Grant - others:ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061; OP VK 2 LaserGen(XE) CZ.1.07/2.3.00/20.0087 Institutional support: RVO:68378271 ; RVO:61389021 Keywords : silicon carbide * ion detectors * high power laser Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.815, year: 2013

  7. Sensitive detection of hydrogen in a-Si:H by coincidence measurement of elastically scattered 100 MeV /sup 3/He/sup 2 +/ ions and recoil protons

    Energy Technology Data Exchange (ETDEWEB)

    Fukada, Noboru; Imura, Takeshi; Hiraki, Akio [Osaka Univ., Suita (Japan). Faculty of Engineering; Itahashi, Takahisa; Fukuda, Tomokazu; Tanaka, Masayoshi

    1982-09-01

    We have drastically improved the sensitivity of the nuclear elastic scattering (NES) method for determining hydrogen concentrations in hydrogenated amorphous silicon (a-Si:H) films. A beam of 100 MeV /sup 3/He/sup 2 +/ ions was used in the experiment. By taking the coincidence of detection of the scattered /sup 3/He ion with that of the recoil proton, we could achieve a sensitivity of 0.1 atomic percent with a precision of about 1 percent for 1 ..mu..m films.

  8. Effect of substrate temperature on the radiation damage from MeV Si implantation in Si

    International Nuclear Information System (INIS)

    Yu, X.K.; Shao Lin; Rusakova, Irene; Wang, X.M.; Ma, K.B.; Chen, H.; Liu, Jiarui; Chu, W.-K.

    2006-01-01

    We have investigated the radiation damage by MeV implantation of Si in Si and its evolution under thermal annealing. Si wafers were implanted with MeV Si at various substrate temperatures. Damages were characterized by Rutherford-backscattering (RBS) channeling and by transmission electron microscopy (TEM). Defect formation after post-implantation annealing is very sensitive to the substrate temperatures during implantation. When the substrate temperature was decreased to 200 K, TEM revealed two distinct bands of damage after annealing: one around the mean projected ion range and another at half the projected range. Our study indicates that the formation of defects at half range results from the solid phase epitaxy growth of initial buried amorphous layers

  9. Thermoluminescence of sol–gel derived Y{sub 2}O{sub 3}:Nd{sup 3+} nanophosphor exposed to 100 MeV Si{sup 8+} ions and gamma rays

    Energy Technology Data Exchange (ETDEWEB)

    Shivaramu, N.J. [Department of Physics, Jnanabharathi Campus, Bangalore University, Bangalore 560 056 (India); Lakshminarasappa, B.N., E-mail: bnlnarassappa@rediffmail.com [Department of Physics, Jnanabharathi Campus, Bangalore University, Bangalore 560 056 (India); Nagabhushana, K.R., E-mail: bhushankr@gmail.com [Department of Physics (S and H), PES Institute of Technology, 100 Feet Ring Road, BSK III stage, Bangalore 560085 (India); Singh, Fouran [Inter University Accelerator Centre, P.O. Box No. 10502, New Delhi 110 067 (India)

    2015-07-15

    Highlights: • Nanocrystalline Nd{sup 3+} doped Y{sub 2}O{sub 3} was synthesized by sol–gel technique. • Pellets of Y{sub 2}O{sub 3}:Nd{sup 3+} were irradiated with 100 MeV swift Si{sup 8+} ions and γ-rays. • The relative TL efficiency of Y{sub 2}O{sub 3}:Nd{sup 3+} of 100 MeV Si ion to γ-rays of {sup 60}Co and is found to be 0.059. • Gamma irradiated Y{sub 2}O{sub 3}:Nd{sup 3+} was observed, it is suitable for space dosimetry application. - Abstract: Nanocrystalline Nd{sup 3+} doped Y{sub 2}O{sub 3} was synthesized by sol–gel technique. Crystallite size calculated by Scherrer relation was found to be in the range 28–30 nm. Fourier transform infrared spectroscopy (FTIR) revealed Y−O, −OH stretching and C−O bending bonds. Pellets of Y{sub 2}O{sub 3}:Nd{sup 3+} were irradiated with 100 MeV swift Si{sup 8+} ions and γ-rays for the fluence/dose in the range 3 × 10{sup 11}–3 × 10{sup 13} ions cm{sup −2} and 1.0{sup -}14 kGy respectively. A prominent thermoluminescence (TL) glow with peak at 527 K and a weak one with peak at 600 K were observed in Si{sup 8+} ion irradiated samples while, a prominent TL glow with peak at 393 K besides a shoulder at 434 K and a weak one with peak at 581 K were observed in γ-irradiated phosphors. The relative TL efficiency of Y{sub 2}O{sub 3}:Nd{sup 3+} of 100 MeV Si ion beam to γ-rays of {sup 60}Co and is found to be 0.059. The TL kinetic parameters were calculated using Chen’s peak shape method and the results obtained are discussed. Y{sub 2}O{sub 3}:Nd{sup 3+} was observed for its use in space dosimetry application.

  10. Surface temperature measurements for ion-bombarded Si and GaAs at 1.0 to 2.0 MeV

    International Nuclear Information System (INIS)

    Lowe, L.F.; Kennedy, J.K.; Davies, D.E.; Deane, M.L.; Eyges, L.J.

    1975-01-01

    Surface temperatures of ion-bombarded silicon and gallium arsenide have been measured using an infrared detector. Ion beams of N + , N + 2 , O + , O + 2 , C + , CO + , and H + were used at energies from 1--2.0 MeV and at current densities up to 12 μAcenter-dotcm/sup -2/. No temperature dependence was found on ion species, energy, or current. The change in temperature depended only on beam power, target material, and sample mounting technique. With proper mounting temperature increases of 20 degreeC for silicon and 65 degreeC for gallium arsenide were observed for a beam power density of 1.0 Wcenter-dotcm/sup -2/

  11. Structural, surface potential and optical studies of AlGaN based double heterostructures irradiated by 120 MeV Si{sup 9+} swift heavy ions

    Energy Technology Data Exchange (ETDEWEB)

    Arivazhagan, P., E-mail: arivazhaganau2008@gmail.com [Crystal Growth Centre, Anna University, Chennai, 600 025 (India); Ramesh, R.; Balaji, M. [Crystal Growth Centre, Anna University, Chennai, 600 025 (India); Asokan, K. [Inter-University Accelerator Centre (IUAC), New Delhi (India); Baskar, K. [Crystal Growth Centre, Anna University, Chennai, 600 025 (India)

    2016-09-15

    The Al{sub 0.33}Ga{sub 0.77}N/Al{sub 0.14}Ga{sub 0.86}N based double heterostructure was irradiated using Si{sup 9+} ion at room temperature (RT) and liquid nitrogen temperature (LNT) with four dissimilar ion fluence. The effect of Si{sup 9+} ion irradiation in dislocation densities and in-plane strain of GaN layer were discussed. The in-plane strain values of Al{sub x}Ga{sub 1-x}N layers were calculated from asymmetric reciprocal space mapping (RSM). The surface modification and the variation in phase shift on Al{sub 0.33}Ga{sub 0.77}N surfaces due to the irradiation were measured by Electrostatic Force Microscopy (EFM). The capacitance of the tip-sample system was determined from EFM. The band edge emissions of heterostructures were measured by the room temperature phototluminescence (PL) and the shift in the Al{sub 0.14}Ga{sub 0.86}N active layer emission peaks towards the low energy side at low fluence ion irradiation has been noted. - Highlights: • Effects of Si{sup 9+} ion irradiation on AlGaN double heterostructures were investigated. • Dislocation densities of GaN reduced at liquid nitrogen temperature irradiation. • Variation in phase shift on Al{sub 0.33}Ga{sub 0.77}N surfaces was measured by EFM. • Capacitance per unit area values of AFM tip-sample surface system were calculated. • Si{sup 9+} irradiations play an important role to tune the energy gap in Al{sub 0.14}Ga{sub 0.86}N.

  12. Effect of 120 MeV 28Si9+ ion irradiation on structural and magnetic properties of NiFe2O4 and Ni0.5Zn0.5Fe2O4

    Science.gov (United States)

    Sharma, R.; Raghuvanshi, S.; Satalkar, M.; Kane, S. N.; Tatarchuk, T. R.; Mazaleyrat, F.

    2018-05-01

    NiFe2O4, Ni0.5Zn0.5Fe2O4 samples were synthesized using sol-gel auto combustion method, and irradiated by using 120 MeV 28Si9+ ion with ion fluence of 1×1012 ions/cm2. Characterization of pristine, irradiated samples were done using X-Ray Diffraction (XRD), Field Emission Scanning Microscopy (FE-SEM), Energy Dispersive X-ray Analysis (EDAX) and Vibrating Sample Magnetometer (VSM). XRD validates the single phase nature of pristine, irradiated Ni- Zn nano ferrite except for Ni ferrite (pristine, irradiated) where secondary phases of α-Fe2O3 and Ni is observed. FE- SEM images of pristine Ni, Ni-Zn ferrite show inhomogeneous nano-range particle size distribution. Presence of diamagnetic ion (Zn2+) in NiFe2O4 increases oxygen positional parameter (u 4¯3m ), experimental, theoretical saturation magnetization (Msexp., Msth.), while decreases the grain size (Ds) and coercivity (Hc). With irradiation Msexp., Msth. increases but not much change are observed in Hc. New antistructure modeling for the pristine, irradiated Ni and Ni-Zn ferrite samples was used for describing the surface active centers.

  13. Anisotropic deformation of metallo-dielectric core-shell colloids under MeV ion irradiation

    International Nuclear Information System (INIS)

    Penninkhof, J.J.; Dillen, T. van; Roorda, S.; Graf, C.; Blaaderen, A. van; Vredenberg, A.M.; Polman, A.

    2006-01-01

    We have studied the deformation of metallo-dielectric core-shell colloids under 4 MeV Xe, 6 and 16 MeV Au, 30 MeV Si and 30 MeV Cu ion irradiation. Colloids of silica surrounded by a gold shell, with a typical diameter of 400 nm, show anisotropic plastic deformation under MeV ion irradiation, with the metal flowing conform the anisotropically deforming silica core. The 20 nm thick metal shell imposes a mechanical constraint on the deforming silica core, reducing the net deformation strain rate compared to that of pure silica. In colloids consisting of a Au core and a silica shell, the silica expands perpendicular to the ion beam, while the metal core shows a large elongation along the ion beam direction, provided the silica shell is thick enough (>40 nm). A minimum electronic energy loss of 3.3 keV/nm is required for shape transformation of the metal core. Silver cores embedded in a silica shell show no elongation, but rather disintegrate. Also in planar SiO 2 films, Au and Ag colloids show entirely different behavior under MeV irradiation. We conclude that the deformation model of core-shell colloids must include ion-induced particle disintegration in combination with thermodynamical effects, possibly in combination with mechanical effects driven by stresses around the ion tracks

  14. Anisotropic deformation of metallo-dielectric core shell colloids under MeV ion irradiation

    Science.gov (United States)

    Penninkhof, J. J.; van Dillen, T.; Roorda, S.; Graf, C.; van Blaaderen, A.; Vredenberg, A. M.; Polman, A.

    2006-01-01

    We have studied the deformation of metallo-dielectric core-shell colloids under 4 MeV Xe, 6 and 16 MeV Au, 30 MeV Si and 30 MeV Cu ion irradiation. Colloids of silica surrounded by a gold shell, with a typical diameter of 400 nm, show anisotropic plastic deformation under MeV ion irradiation, with the metal flowing conform the anisotropically deforming silica core. The 20 nm thick metal shell imposes a mechanical constraint on the deforming silica core, reducing the net deformation strain rate compared to that of pure silica. In colloids consisting of a Au core and a silica shell, the silica expands perpendicular to the ion beam, while the metal core shows a large elongation along the ion beam direction, provided the silica shell is thick enough (>40 nm). A minimum electronic energy loss of 3.3 keV/nm is required for shape transformation of the metal core. Silver cores embedded in a silica shell show no elongation, but rather disintegrate. Also in planar SiO2 films, Au and Ag colloids show entirely different behavior under MeV irradiation. We conclude that the deformation model of core-shell colloids must include ion-induced particle disintegration in combination with thermodynamical effects, possibly in combination with mechanical effects driven by stresses around the ion tracks.

  15. Formation mechanism of SiC in C-Si system by ion irradiation

    International Nuclear Information System (INIS)

    Hishita, Shunichi; Aizawa, Takashi; Suehara, Shigeru; Haneda, Hajime

    2003-01-01

    The irradiation effects of 2 MeV He + , Ne + , and Ar + ions on the film structure of the C-Si system were investigated with RHEED and XPS. The ion dose dependence of the SiC formation was kinetically analyzed. The SiC formation at moderate temperature was achieved by 2 MeV ion irradiation when the thickness of the initial carbon films was appropriate. The evolution process of the SiC film thickness consisted of the 3 stages. The first stage was the steep increase of the SiC, and was governed by the inelastic collision. The second was the gentle increase of the SiC, and was governed by the diffusion. The last was the decrease of the SiC, and was caused by the sputtering. The formation mechanism of the SiC was discussed. (author)

  16. Patterned microstructures formed with MeV Au implantation in Si(1 0 0)

    International Nuclear Information System (INIS)

    Rout, Bibhudutta; Greco, Richard R.; Zachry, Daniel P.; Dymnikov, Alexander D.; Glass, Gary A.

    2006-01-01

    Energetic (MeV) Au implantation in Si(1 0 0) (n-type) through masked micropatterns has been used to create layers resistant to KOH wet etching. Microscale patterns were produced in PMMA and SU(8) resist coatings on the silicon substrates using P-beam writing and developed. The silicon substrates were subsequently exposed using 1.5 MeV Au 3+ ions with fluences as high as 1 x 10 16 ions/cm 2 and additional patterns were exposed using copper scanning electron microscope calibration grids as masks on the silicon substrates. When wet etched with KOH microstructures were created in the silicon due to the resistance to KOH etching cause by the Au implantation. The process of combining the fabrication of masked patterns with P-beam writing with broad beam Au implantation through the masks can be a promising, cost-effective process for nanostructure engineering with Si

  17. MEV Energy Electrostatic Accelerator Ion Beam Emittance Measurement

    OpenAIRE

    I.G. Ignat’ev; M.I. Zakharets; S.V. Kolinko; D.P. Shulha

    2014-01-01

    The testing equipment was designed, manufactured and tried out permitting measurements of total current, current profile and emittance of an ion beam extracted from the ion beam. MeV energy electrostatic accelerator ion H + beam emittance measurement results are presented.

  18. Highly Stripped Ion Sources for MeV Ion Implantation

    Energy Technology Data Exchange (ETDEWEB)

    Hershcovitch, Ady

    2009-06-30

    Original technical objectives of CRADA number PVI C-03-09 between BNL and Poole Ventura, Inc. (PVI) were to develop an intense, high charge state, ion source for MeV ion implanters. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MV LINAC is used for acceleration of a few rnA. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform (de acceleration) to generate high-energy ion beams for implantation. This de acceleration of ions will be far more efficient (in energy utilization). The resultant implanter will be smaller in size. It will generate higher quality ion beams (with lower emittance) for fabrication of superior semiconductor products. In addition to energy and cost savings, the implanter will operate at a lower level of health risks associated with ion implantation. An additional aim of the project was to producing a product that can lead to long­ term job creation in Russia and/or in the US. R&D was conducted in two Russian Centers (one in Tomsk and Seversk, the other in Moscow) under the guidance ofPVI personnel and the BNL PI. Multiple approaches were pursued, developed, and tested at various locations with the best candidate for commercialization delivered and tested at on an implanter at the PVI client Axcelis. Technical developments were exciting: record output currents of high charge state phosphorus and antimony were achieved; a Calutron-Bemas ion source with a 70% output of boron ion current (compared to 25% in present state-of-the-art). Record steady state output currents of higher charge state phosphorous and antimony and P ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb {sup 4 +}, Sb{sup 5+}, and Sb{sup 6+} respectively. Ultimate commercialization goals did not succeed (even though a number of the products like high

  19. Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

    Directory of Open Access Journals (Sweden)

    Jhovani Bornacelli

    2013-01-01

    Full Text Available We studied the photoluminescence (PL of Si nanocrystals (Si-NCs embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au, and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H2/N2 and Ar to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

  20. Depth profile of In and As in Si measured by RBS with He and C ions

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Q; Fang, Z [Newcastle Univ., NSW (Australia). Dept. of Physics; Ophel, T R [Australian National Univ., Canberra, ACT (Australia). Dept. of Nuclear Physics

    1994-12-31

    The depth profile of As and In implanted into Si have been measured by RBS (Rutherford Backscattering Spectrometry) with 2 MeV He ions and 6 MeV C ions. Advantages of enhanced depth and mass resolution with C ions have been demonstrated over the conventional He RBS. More reliable information for the depth profile of In and As in Si has been obtained. 12 refs., 3 figs.

  1. Depth profile of In and As in Si measured by RBS with He and C ions

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Q.; Fang, Z. [Newcastle Univ., NSW (Australia). Dept. of Physics; Ophel, T.R. [Australian National Univ., Canberra, ACT (Australia). Dept. of Nuclear Physics

    1993-12-31

    The depth profile of As and In implanted into Si have been measured by RBS (Rutherford Backscattering Spectrometry) with 2 MeV He ions and 6 MeV C ions. Advantages of enhanced depth and mass resolution with C ions have been demonstrated over the conventional He RBS. More reliable information for the depth profile of In and As in Si has been obtained. 12 refs., 3 figs.

  2. Slowing down of 2–11 MeV {sup 12}C, {sup 16}O, {sup 28}Si and {sup 63}Cu heavy ions through Si{sub 3}N{sub 4} thin foil by using Time-of-Flight spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Guesmia, A., E-mail: guesmia@tlabs.ac.za [iThemba LABS, National Research Foundation, P.O. Box 722, Somerset West 7129 (South Africa); Departement de physique, Faculté des Sciences Université Saad Dahleb, B. P. 270, Route de Soumaa, Blida (Algeria); Departement de physique, Faculté des Sciences Université M’hamedBougara, Boumerdes (Algeria); Msimanga, M. [Physics Department, Tshwane University of Technology, P Bag X 680, Pretoria 0001 (South Africa); Pineda-Vargas, C.A. [iThemba LABS, National Research Foundation, P.O. Box 722, Somerset West 7129 (South Africa); Faculty of Health and Wellness Sciences, CPUT, P.O. Box 1906, Bellville 7535 (South Africa); Ammi, H.; Dib, A.; Ster, M. [Centre de Recherche Nucleaire d’Alger, 2 Bd. Frantz Fanon, B. P. 399, Alger-Gare, Algiers (Algeria)

    2016-03-15

    The stopping force and the energy-loss straggling of {sup 63}Cu, {sup 28}Si, {sup 16}O and {sup 12}C partially stripped heavy ions crossing silicon nitride foil has been determined over a continuous range of energies 2–11 MeV, by using a method based on the Heavy Ion-Elastic Recoil Detection Analysis (HI-ERDA) technique using a Time of Flight (ToF) spectrometer. The obtained energy loss straggling values corrected for non-statistical straggling and the thickness variation using the Besenbacher’s method have been analyzed and compared with the corresponding computed values. For computed electronic straggling we have used alternatively the widely used formulations such as, the universal Bohr straggling deduced from the Bohr stopping model, and the Lindhard–Scharff formula including the Bunching effect given by Hvelplund–Firsov formula according to the Besenbacher approach. The aim of such comparison is to check the reliability and accuracy of the existing energy loss straggling formulations, in the light of the present experimental results. The experimental results of energy loss straggling of all ions are found to be greater than those predicted by the Bohr stopping model or Lindhard–Scharff prediction model. The introduction of the bunching effect improves the comparison and gives an estimation of other effects such as charge exchange.

  3. Effects of dual-ion irradiation on the swelling of SiC/SiC composites

    International Nuclear Information System (INIS)

    Kishimoto, Hirotatsu; Kohyama, Akira; Ozawa, Kazumi; Kondo, Sosuke

    2005-01-01

    Silicon carbide (SiC) matrix composites reinforced by SiC fibers is a candidate structural material of fusion gas-cooled blanket system. From the viewpoint of material designs, it is important to investigate the swelling by irradiation, which results from the accumulation of displacement damages. In the fusion environment, (n, α) nuclear reactions are considered to produce helium gas in SiC. For the microstructural evolution, a dual-ion irradiation method is able to simulate the effects of helium. In the present research, 1.7 MeV tandem and 1 MeV single-end accelerators were used for Si self-ion irradiation and helium implantation, respectively. The average helium over displacement per atom (dpa) ratio in SiC was adjusted to 60 appm/dpa. The irradiation temperature ranged from room temperature to 1400degC. The irradiation-induced swelling was measured by the step height method. Helium that was implanted simultaneously with displacement damages in dual-ion irradiated SiC increased the swelling that was larger than that by single-ion irradiated SiC below 800degC. Since this increase was not observed above 1000degC, the interaction of helium and displacement damages was considered to change above 800degC. In this paper, the microstructural behavior and dimensional stability of SiC materials under the fusion relevant environment are discussed. (author)

  4. 0,01-5 MeV heavy ion accelerators

    International Nuclear Information System (INIS)

    Golubev, V.P.; Ivanov, A.S.; Nikiforov, S.A.; Svin'in, M.P.; Tarvid, G.V.; Troshikhin, A.G.; Fedotov, M.T.

    1983-01-01

    The results of development of an accelerating complex on the base of the UP-2-1 heavy ion charge exchange accelerator and IMPLANT-500 high-voltage heavy ion accelerator are given. The accelerating complex provides overlapping of the 0.01 MeV to 5 MeV energy range at accelerated beam currents of 10 -3 -10 -6 A order. The structural features of accelerators and their basic units and systems are considered. The UP-2-1 accelerator is designed for researches in the field of experimental physics and applied problem solutions. The IMPLANT-500 accelerator is designed for commercial ion-beam facilities with closed loop of silicon plate treatment

  5. Ion beam processes in Si

    International Nuclear Information System (INIS)

    Holland, O.W.; Narayan, J.; Fathy, D.

    1984-07-01

    Observation of the effects of implants of energetic ions at high dose rates into Si have produced some exciting and interesting results. The mechanism whereby displacement damage produced by ions self-anneals during high dose rate implantation is discussed. It is shown that ion beam annealing (IBA) offers in certain situations unique possibilities for damage annealing. Annealing results of the near surface in Si with a buried oxide layer, formed by high dose implantation, are presented in order to illustrate the advantages offered by IBA. It is also shown that ion irradiation can stimulate the epitaxial recrystallization of amorphous overlayers in Si. The nonequilibrium alloying which results from such epitaxial processes is discussed as well as mechanisms which limit the solid solubility during irradiation. Finally, a dose rate dependency for the production of stable damage by ion irradiation at a constant fluence has been observed. For low fluence implants, the amount of damage is substantially greater in the case of high flux rather than low flux implantation

  6. MeV ion induced damage production and accumulation in silicon

    International Nuclear Information System (INIS)

    Suzuki, Motoyuki; Okazaki, Makoto; Shin, Kazuo; Takagi, Ikuji; Yoshida, Koji

    1993-01-01

    Measurement and analysis were made for radiation damages in silicon induced by MeV ions. A single crystal silicon was bombarded by 800 keV O + and 700 keV Si + with the dose from 2x10 15 up to 8x10 15 cm -2 . And defects induced by the ion bombardments were observed by the channeling method. Some new modifications were made to the analysis of the channeling RBS spectrum so that the accuracy of the unfolded defect distribution may be improved. A new model of point-defect clustering and amorphous formation was proposed, which well reproduced the observed defect distribution in silicon. (author)

  7. Si exfoliation by MeV proton implantation

    International Nuclear Information System (INIS)

    Braley, Carole; Mazen, Frédéric; Tauzin, Aurélie; Rieutord, François; Deguet, Chrystel; Ntsoenzok, Esidor

    2012-01-01

    Proton implantation in silicon and subsequent annealing are widely used in the Smart Cut™ technology to transfer thin layers from a substrate to another. The low implantation energy range involved in this process is usually from a few ten to a few hundred of keV, which enables the separation of up to 2 μm thick layers. New applications in the fields of 3D integration and photovoltaic wafer manufacturing raise the demand for extending this technology to higher energy in order to separate thicker layer from a substrate. In this work, we propose to investigate the effect of proton implantation in single crystalline silicon in the 1–3 MeV range which corresponds to a 15–100 μm range for the hydrogen maximum concentration depth. We show that despites a considerably lower hydrogen concentration at R p , the layer separation is obtained with fluence close to the minimum fluence required for low energy implantation. It appears that the fracture propagation in Si and the resulting surface morphology is affected by the substrate orientation. Defects evolution is investigated with Fourier Transform Infrared Spectroscopy. The two orientations reveal similar type of defects but their evolution under annealing appears to be different.

  8. Cavities at the Si projected range by high dose and energy Si ion implantation in Si

    International Nuclear Information System (INIS)

    Canino, M.; Regula, G.; Lancin, M.; Xu, M.; Pichaud, B.; Ntzoenzok, E.; Barthe, M.F.

    2009-01-01

    Two series of n-type Si samples α and β are implanted with Si ions at high dose (1 x 10 16 ) and high energies, 0.3 and 1.0 MeV, respectively. Both sort of samples are then implanted with 5 x 10 16 He cm -2 (at 10 or 50 keV) and eventually with B atoms. Some of the samples are annealed at temperatures ranging from 800 to 1000 deg. C to allow the thermal growth of He-cavities, located between sample surface and the projected range (R p ) of Si. After the triple ion implantation, which corresponds to defect engineering, samples were characterized by cross-section transmission electron microscopy (XTEM). Voids (or bubbles) are observed not only at the R p (He) on all annealed samples, but also at the R p (Si) on β samples implanted with He at 50 keV. The samples are also studied by positron annihilation spectroscopy (PAS) and the spectra confirm that as-implanted samples contain di-vacancies and that the annealed ones, even at high temperature have bigger open volumes, which are assumed to be the same voids observed by XTEM. It is demonstrated that a sole Si implantation at high energy and dose is efficient to create cavities which are thermally stable up to 1000 deg. C only in the presence of He.

  9. 100 MeV silver ions induced defects and modifications in silica glass

    Energy Technology Data Exchange (ETDEWEB)

    Jadhav, Vijay S.; Deore, Avinash V.; Dahiwale, S.S. [Department of Physics, University of Pune, Pune 411007 (India); Kanjilal, D. [Inter University Accelerator Centre, New Delhi 110067 (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411007 (India); Dhole, S.D., E-mail: sanjay@physics.unipune.ac.in [Department of Physics, University of Pune, Pune 411007 (India)

    2014-07-15

    Highlights: •Study of silver ion induced defects and modifications in silica glass. •Variation in oxygen deficiency centres (ODA-II) and nonbridging oxygen hole centres (NBOHC). •Study of structural damage in terms of Urbach energy. -- Abstract: A few silica glass samples having 1 cm{sup 2} area and 0.1 cm thickness were irradiated with 100 MeV energy Ag{sup 7+} ions for the fluences ranging from 1 × 10{sup 12} ions/cm{sup 2} to 5 × 10{sup 13} ions/cm{sup 2}. The optical properties and the corresponding induced defects were characterised by the techniques such as UV–Visible, Photoluminescence (PL), Fourier transform infrared (FTIR), and Electron spin resonance (ESR) spectroscopy. The UV–Visible absorption spectra show two peaks, one at 5 eV and another weak peak at 5.8 eV. A peak observed at 5.0 eV corresponds to B{sub 2} band (oxygen deficiency in SiO{sub 2} network) and the peak at 5.8 eV is due to the paramagnetic defects like E′ centre. The intensities of these peaks found to be increased with increase in ion fluence. It attributes to the increase in the concentration of E′ centres and B{sub 2} band respectively. In addition, the optical band gap energy, Urbach energy and the defects concentration have been calculated using Urbach plot. The optical band gap found to be decreased from 4.65 eV to 4.39 eV and the Urbach energy found to be increased from 60 meV to 162 meV. The defect concentration of nonbridging oxygen hole centres (NBOHC) and E′ centres are found to be increased to 1.69 × 10{sup 13} cm{sup −3} and 3.134 × 10{sup 14} cm{sup −3} respectively. In PL spectra, the peak appeared at 1.92 eV and 2.7 eV envisage the defects of nonbridging oxygen hole centres and B{sub 2α} oxygen deficient centres respectively. ESR spectra also confirms the existence of E′ and NBOHC centres. FTIR spectra shows scissioning of Si-O-Si bonds and the formation of Si-H and Si-OH bonds, which supports to the co-existence of the defects induced by Ag

  10. Microbeam line of MeV heavy ions for materials modification and in-situ analysis

    International Nuclear Information System (INIS)

    Horino, Yuji; Chayahara, Akiyoshi; Kiuchi, Masato; Fujii, Kanenaga; Satoh, Mamoru; Takai, Mikio.

    1990-01-01

    A microbeam line for MeV heavy ions of almost any element has been developed for microion-beam processing such as maskless MeV ion implantation and its in-situ analysis. Beam spot sizes of 4.0 μm x 4.0 μm for 3 MeV C 2+ and 9.6 μm x 4.8 μm for 1.8 MeV Au 2+ beams were obtained. Maskless MeV gold ion implantation to a silicon substrate and in-situ microanalysis before and after ion implantation were demonstrated. (author)

  11. Measurement and modelling of the radiation damage of silicon by MeV Ag ions

    International Nuclear Information System (INIS)

    Lindner, J.K.N.; Eder, J.; Stritzker, B.

    1999-01-01

    Depth profiles of the radiation damage produced by 4 MeV Ag ions in Si(111) at temperatures of 210--450 K are studied by optical reflectivity depth profiling and TEM for doses between 10 12 and 10 15 Ag/cm 2 . For high implantation temperatures, the depth of maximum damage is shown to be dose dependent. Point defect diffusion is shown to result in long tails of defect depth profiles. High-temperature amorphization is observed to proceed via the formation and bridge-like coalescence of isolated amorphous volumina. The damage at the depth of the maximum in the nuclear stopping power is described as a function of dose and temperature by the Hecking model. The model parameters and a comparison with those obtained for lighter ions reflect the particular properties of heavy ion collision cascades

  12. Improving Passivation Process of Si Nano crystals Embedded in SiO2 Using Metal Ion Implantation

    International Nuclear Information System (INIS)

    Bornacelli, J.; Esqueda, J.A.R.; Fernandez, L.R.; Oliver, A.

    2013-01-01

    We studied the photoluminescence (PL) of Si nano crystals (Si-NCs) embedded in SiO 2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm) inside the SiO 2 achieving a robust and better protected system. After metal ion implantation (Ag or Au), and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs) could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO 2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H 2 /N 2 and Ar) to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

  13. Comparison of secondary ion emission induced in silicon oxide by MeV and KeV ion bombardment

    International Nuclear Information System (INIS)

    Allali, H.; Nsouli, B.; Thomas, J.P.; Szymczak, W.; Wittmaack, K.

    1993-09-01

    The surface and near-surface composition of SiO 2 layers, has been investigated by negative secondary ion emission mass spectrometry (SIMS) using MeV and KeV ion bombardment in combination with time-of-flight (TOF) mass analysis. The spectra recorded in the mass range 0-100 u are dominated by surface impurities, notably hydrocarbons and silicon polyanions incorporating H and OH entities. The characteristic (fragmentation) patterns are quite different for light and high-velocity ion impact. In high-velocity TOF-SIMS analysis of P-doped layers, prepared by chemical vapour deposition (CVD), the mass lines at 63 and 79 u are very prominent and appear to correlate with the phosphorus concentration (PO 2 and PO 3 , respectively). It is shown, however, that for unambiguous P analysis one has to use dynamic SIMS or high mass resolution. (author) 11 refs., 5 figs

  14. Light-emitting Si nanostructures formed by swift heavy ions in stoichiometric SiO2 layers

    Science.gov (United States)

    Kachurin, G. A.; Cherkova, S. G.; Marin, D. V.; Kesler, V. G.; Volodin, V. A.; Skuratov, V. A.

    2012-07-01

    Three hundred and twenty nanometer-thick SiO2 layers were thermally grown on the Si substrates. The layers were irradiated with 167 MeV Xe ions to the fluences ranging between 1012 cm-2 and 1014 cm-2, or with 700 MeV Bi ions in the fluence range of 3 × 1012-1 × 1013 cm-2. After irradiation the yellow-orange photoluminescence (PL) band appeared and grew with the ion fluences. In parallel optical absorption in the region of 950-1150 cm-1, Raman scattering and X-ray photoelectron spectroscopy evidenced a decrease in the number of Si-O bonds and an increase in the number of Si-coordinated atoms. The results obtained are interpreted as the formation of the light-emitting Si-enriched nanostructures inside the tracks of swift heavy ions through the disproportionation of SiO2. Ionization losses of the ions are regarded as responsible for the processes observed. Difference between the dependences of the PL intensity on the fluences of Xe and Bi ions are ascribed to their different stopping energy, therewith the diameters of the tracks of Xe and Bi ions were assessed as <3 nm and ˜10 nm, respectively. The observed shift of the PL bands, induced by Xe and Bi ions, agrees with the predictions of the quantum confinement theory.

  15. Light-emitting Si nanostructures formed by swift heavy ions in stoichiometric SiO{sub 2} layers

    Energy Technology Data Exchange (ETDEWEB)

    Kachurin, G.A., E-mail: kachurin@isp.nsc.ru [A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk (Russian Federation); Cherkova, S.G. [A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk (Russian Federation); Marin, D.V. [A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, 630090 Novosibirsk (Russian Federation); Kesler, V.G. [A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk (Russian Federation); Volodin, V.A. [A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, 630090 Novosibirsk (Russian Federation); Skuratov, V.A. [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation)

    2012-07-01

    Three hundred and twenty nanometer-thick SiO{sub 2} layers were thermally grown on the Si substrates. The layers were irradiated with 167 MeV Xe ions to the fluences ranging between 10{sup 12} cm{sup -2} and 10{sup 14} cm{sup -2}, or with 700 MeV Bi ions in the fluence range of 3 Multiplication-Sign 10{sup 12}-1 Multiplication-Sign 10{sup 13} cm{sup -2}. After irradiation the yellow-orange photoluminescence (PL) band appeared and grew with the ion fluences. In parallel optical absorption in the region of 950-1150 cm{sup -1}, Raman scattering and X-ray photoelectron spectroscopy evidenced a decrease in the number of Si-O bonds and an increase in the number of Si-coordinated atoms. The results obtained are interpreted as the formation of the light-emitting Si-enriched nanostructures inside the tracks of swift heavy ions through the disproportionation of SiO{sub 2}. Ionization losses of the ions are regarded as responsible for the processes observed. Difference between the dependences of the PL intensity on the fluences of Xe and Bi ions are ascribed to their different stopping energy, therewith the diameters of the tracks of Xe and Bi ions were assessed as <3 nm and {approx}10 nm, respectively. The observed shift of the PL bands, induced by Xe and Bi ions, agrees with the predictions of the quantum confinement theory.

  16. Elastic and inelastic scattering of α particles at 41MeV and elastic scattering of 3He at 46MeV on 27Al, 28Si, 29Si, and 30Si

    International Nuclear Information System (INIS)

    Mariolopoulos, Georges.

    1976-01-01

    Elastic and inelastic scattering of α particles at 41MeV has been studied on 27 Al, 28 Si, 29 Si and 30 Si between 30 and 160deg c.m. The elastic cross section for α particles on 28 Si shows more oscillation than that for the other targets in the region between 80 and 160deg c.m. The data have been analyzed using both a 9 parameters optical model potential and a coupled channel code. In order to investigate the assumption that the abnormal cross section of 28 Si is due to a cluster effect, the 27 Al, 28 Si, 29 Si, 30 Si( 3 He, 3 He) reaction have been studied between 30 and 110deg c.m., using a 46MeV beam. In this case the angular distributions of the three Si isotopes are similar. An optical model analysis of the data reveals no anomaly [fr

  17. Ion beam induced luminescence from diamond using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Bettiol, A A; Jamieson, D N; Prawer, S; Allen, M G [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1994-12-31

    Analysis of the luminescence induced by a MeV ion beam offers the potential to provide useful information about the chemical properties of atoms in crystals to complement the information provided by more traditional Ion Beam Analysis (IBA) such as Rutherford Backscattering Spectrometry (RBS), ion channeling and Particle Induced X-ray Emission (PIXE). Furthermore, the large penetration depth of the MeV ion beam offers several advantages over the relatively shallow penetration of keV electrons typically employed in cathodoluminescence. An Ion Beam Induced Luminescence (IBIL) detection system was developed for the Melbourne microprobe that allows the spatial mapping of the luminescence signal along with the signals from RBS and PIXE. Homoepitaxial diamond growth has been studied and remarkable shifts in the characteristic blue luminescence of diamond towards the green were observed in the overgrowth. This has been tentatively identified as being due to transition metal inclusions in the epitaxial layers. 8 refs., 2 refs.

  18. Ion beam induced luminescence from diamond using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Bettiol, A.A.; Jamieson, D. N.; Prawer, S.; Allen, M.G. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1993-12-31

    Analysis of the luminescence induced by a MeV ion beam offers the potential to provide useful information about the chemical properties of atoms in crystals to complement the information provided by more traditional Ion Beam Analysis (IBA) such as Rutherford Backscattering Spectrometry (RBS), ion channeling and Particle Induced X-ray Emission (PIXE). Furthermore, the large penetration depth of the MeV ion beam offers several advantages over the relatively shallow penetration of keV electrons typically employed in cathodoluminescence. An Ion Beam Induced Luminescence (IBIL) detection system was developed for the Melbourne microprobe that allows the spatial mapping of the luminescence signal along with the signals from RBS and PIXE. Homoepitaxial diamond growth has been studied and remarkable shifts in the characteristic blue luminescence of diamond towards the green were observed in the overgrowth. This has been tentatively identified as being due to transition metal inclusions in the epitaxial layers. 8 refs., 2 refs.

  19. Identification and imaging of modern paints using Secondary Ion Mass Spectrometry with MeV ions

    DEFF Research Database (Denmark)

    Bogdanović Radović, Iva; Siketić, Zdravko; Jembrih-Simbürger, Dubravka

    2017-01-01

    Secondary Ion Mass Spectrometry using MeV ion excitation was applied to analyse modern paint materials containing synthetic organic pigments and binders. It was demonstrated that synthetic organic pigments and binder components with molecular masses in the m/z range from 1 to 1200 could be identi......Secondary Ion Mass Spectrometry using MeV ion excitation was applied to analyse modern paint materials containing synthetic organic pigments and binders. It was demonstrated that synthetic organic pigments and binder components with molecular masses in the m/z range from 1 to 1200 could...... be identified in different paint samples with a high efficiency and in a single measurement. Different ways of mounting of mostly insulating paint samples were tested prior to the analysis in order to achieve the highest possible yield of pigment main molecular ions. As Time-of-Flight mass spectrometer for Me......V Secondary Ion Mass Spectrometry is attached to the heavy ion microprobe, molecular imaging on cross-sections of small paint fragments was performed using focused ions. Due to the fact that molecules are extracted from the uppermost layer of the sample and to avoid surface contamination, the paint samples...

  20. DC and RF ion accelerators for MeV energies

    International Nuclear Information System (INIS)

    Urbanus, W.H.

    1990-01-01

    This thesis deals with the transport and acceleration of intense ion beams in single-ended Van de Graaff accelerators and the multiple beam rf accelerator MEQALAC (Multiple Electrostatic Quadrupole Array Linear Accelerator). Ch. 2 discusses several beam-envelope calculation techniques and describes the ion-optical components of a 1 MV, high-current, heavy-ion implantation facility and a 2 MV facility for analyzing purposes. The X-ray level of these accelerators is kept low, such that no shielding is needed, by keeping the energy of the secondary electrons sufficiently low, which is accomplished by a suppression system of small permanent magnets built in the acceleration tubes (ch. 3). Ch.'s 4,5 and 6 cover various aspects of stage II of the MEQALAC project. This stage deals with the parallel acceleration of four high-current N + beams from 40 keV to 1 MeV. Acceleration takes place in 32 rf gaps which are part of a modified interdigital H-resonator. In between the accelerating gaps, small electrostatic quadrupoles are mounted, which oppose the space charge forces of the intense ion beams. The lenses are arranged in a periodic focusing structure. A bucket-type plasma ion source is used, which produces both N + and N 2 + ions. In between the ion source and the MEQALAC section, a Low Energy Beam Transport (LEBT) section is mounted which provides for the drift space for a buncher. The latter device transforms the extracted dc beams into bunched beams which are accepted by the MEQALAC section. In ch. 4 the transport of ion beams that contain both N + and N 2 + ions, so-called mixed beams, through the LEBT section is discussed and equations for the current limit of a mixed beam are derived. Bunching of mixed N + , N 2 + beams is discussed in ch. 5. Multichannel acceleration of N + ions with the MEQALAC is discussed in ch. 6. (author). 122 refs.; 67 figs.; 1 tab

  1. Focussed MeV ion beam implanted waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Von Bibra, M L; Roberts, A; Nugent, K; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    Single mode buried optical waveguides have been fabricated in fused silica by MeV proton implantation using a focussed hydrogen ion beam. The technique has the potential to direct write waveguide devices and produce multi-layered structures, without the need for intermediate steps such as mask fabrication or layered depositions. A micron resolution Confocal Raman Spectrometer has been used to map the distribution of atomic vacancies that forms the waveguiding region. The results are compared with theoretical calculations. Losses of 3 dB cm{sup -1} have been measured in unannealed samples, which decreases to less than 0.5 dB cm{sup -1} after annealing at 500 degrees Celsius. We describe methods for determining the refractive index distribution of single mode buried waveguides from their output intensity distributions via an inversion of the scalar wave equation. (authors). 5 figs.

  2. Focussed MeV ion beam implanted waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Von Bibra, M.L.; Roberts, A.; Nugent, K.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Single mode buried optical waveguides have been fabricated in fused silica by MeV proton implantation using a focussed hydrogen ion beam. The technique has the potential to direct write waveguide devices and produce multi-layered structures, without the need for intermediate steps such as mask fabrication or layered depositions. A micron resolution Confocal Raman Spectrometer has been used to map the distribution of atomic vacancies that forms the waveguiding region. The results are compared with theoretical calculations. Losses of 3 dB cm{sup -1} have been measured in unannealed samples, which decreases to less than 0.5 dB cm{sup -1} after annealing at 500 degrees Celsius. We describe methods for determining the refractive index distribution of single mode buried waveguides from their output intensity distributions via an inversion of the scalar wave equation. (authors). 5 figs.

  3. Light-emitting Si nanostructures formed by swift heavy ions in stoichiometric SiO2 layers

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Cherkova, S.G.; Marin, D.V.; Kesler, V.G.; Volodin, V.A.; Skuratov, V.A.

    2012-01-01

    Three hundred and twenty nanometer-thick SiO 2 layers were thermally grown on the Si substrates. The layers were irradiated with 167 MeV Xe ions to the fluences ranging between 10 12 cm −2 and 10 14 cm −2 , or with 700 MeV Bi ions in the fluence range of 3 × 10 12 –1 × 10 13 cm −2 . After irradiation the yellow–orange photoluminescence (PL) band appeared and grew with the ion fluences. In parallel optical absorption in the region of 950–1150 cm −1 , Raman scattering and X-ray photoelectron spectroscopy evidenced a decrease in the number of Si–O bonds and an increase in the number of Si-coordinated atoms. The results obtained are interpreted as the formation of the light-emitting Si-enriched nanostructures inside the tracks of swift heavy ions through the disproportionation of SiO 2 . Ionization losses of the ions are regarded as responsible for the processes observed. Difference between the dependences of the PL intensity on the fluences of Xe and Bi ions are ascribed to their different stopping energy, therewith the diameters of the tracks of Xe and Bi ions were assessed as <3 nm and ∼10 nm, respectively. The observed shift of the PL bands, induced by Xe and Bi ions, agrees with the predictions of the quantum confinement theory.

  4. A gas ionisation Direct-STIM detector for MeV ion microscopy

    International Nuclear Information System (INIS)

    Norarat, Rattanaporn; Guibert, Edouard; Jeanneret, Patrick; Dellea, Mario; Jenni, Josef; Roux, Adrien; Stoppini, Luc; Whitlow, Harry J.

    2015-01-01

    Direct-Scanning Transmission Ion Microscopy (Direct-STIM) is a powerful technique that yields structural information in sub-cellular whole cell imaging. Usually, a Si p-i-n diode is used in Direct-STIM measurements as a detector. In order to overcome the detrimental effects of radiation damage which appears as a broadening in the energy resolution, we have developed a gas ionisation detector for use with a focused ion beam. The design is based on the ETH Frisch grid-less off-axis Geiger–Müller geometry. It is developed for use in a MeV ion microscope with a standard Oxford Microbeams triplet lens and scanning system. The design has a large available solid angle for other detectors (e.g. proton induced fluorescence). Here we report the performance for imaging ReNcells VM with μm resolution where energy resolutions of <24 keV fwhm could be achieved for 1 MeV protons using isobutane gas

  5. Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs

    International Nuclear Information System (INIS)

    Usman, Muhammad; Hallen, Anders; Ghandi, Reza; Domeij, Martin

    2010-01-01

    Degradation of 4H-SiC power bipolar junction transistors (BJTs) under the influence of a high-energy helium ion beam was studied. Epitaxially grown npn BJTs were implanted with 3.0 MeV helium in the fluence range of 10 10 -10 11 cm -2 . The devices were characterized by their current-voltage (I-V) behaviour before and after the implantation, and the results showed a clear degradation of the output characteristics of the devices. Annealing these implanted devices increased the interface traps between passivation oxide and the semiconductor, resulting in an increase of base current in the low-voltage operation range.

  6. A 1MeV, 1A negative ion accelerator test facility

    International Nuclear Information System (INIS)

    Hanada, M.; Dairaku, M.; Inoue, T.; Miyamoto, K.; Ohara, Y.; Okumura, Y.; Watanabe, K.; Yokoyama, K.

    1995-01-01

    For the Proof-of-Principle test of negative ion acceleration up to 1 MeV, the beam energy required for ITER, a negative ion test facility named MeV Test Facility (MTF) and an ion source/accelerator have been designed and constructed. They are designed to produce a 1 MeV H- beam at a low source pressure of 0.13Pa. The MTF has a power supply system, which constituts of a 1MV, 1A, 60 s Cockcroft-Walton type dc high energy generator and power supplies for negative ion generation and extraction (ion source power supplies). The negative ion source/accelerator is composed of a cesiated volume source and a 5-stage, multi-aperture, electrostatic accelerator. The MTF and the ion source/accelerator have been completed, and the accelertion test up to 1 MeV of the H- ions has started. (orig.)

  7. Angular distributions of ions channeled in the Si crystals

    International Nuclear Information System (INIS)

    Petrovic, S.; Korica, S.; Kokkoris, M.; Neskovic, N.

    2002-01-01

    In this study we analyze the angular distributions of Ne 10+ ions channeled in the Si crystals. The ion energy is 60 MeV and the crystal thickness is varied from 286 to 3435 nm. This thickness range corresponds to the reduced crystal thickness range from 0.5 to 6, i.e. from the second to the twelfth rainbow cycle. The angular distributions were obtained via the numerical solution of the ion equations of motion and the computer simulation method. The analysis shows that the angular distribution has a periodic behavior. We also analyze the transmission patterns corresponding to the angular distributions. These patterns should be compared to the experimental patterns obtainable by a two-dimensional position sensitive detector. We demonstrate that, when the ion beam divergence is sufficiently large, i.e. much larger than the critical angle for channeling, the channeling star effect occurs in the transmission patterns

  8. Effects of sintering additives on the microstructural and mechanical properties of the ion-irradiated SiCf/SiC

    Science.gov (United States)

    Fitriani, Pipit; Sharma, Amit Siddharth; Yoon, Dang-Hyok

    2018-05-01

    SiCf/SiC composites containing three different types of sintering additives viz. Sc-nitrate, Al2O3-Sc2O3, and Al2O3-Y2O3, were subjected to ion irradiation using 0.2 MeV H+ ions with a fluence of 3 × 1020 ions/m2 at room temperature. Although all composites showed volumetric swelling upon ion irradiation, SiCf/SiC with Sc-nitrate showed the smallest change followed by those with the Al2O3-Sc2O3 and Al2O3-Y2O3 additives. In particular, SiCf/SiC containing the conventional Al2O3-Y2O3 additive revealed significant microstructural changes, such as surface roughening and the formation of cracks and voids, resulting in reduced fiber pullout upon irradiation. On the other hand, the SiCf/SiC with Sc-nitrate showed the highest resistance against ion irradiation without showing any macroscopic changes in surface morphology and mechanical strength, indicating the importance of the sintering additive in NITE-based SiCf/SiC for nuclear structural applications.

  9. Depth distribution of carrier lifetime in 65 MeV oxygen ion irradiated silicon wafers

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.S. [Ecotopia Science Institute, Division of Energy Science, Nagoya University, Nagoya (Japan); Dahiwale, S.S. [Department of Physics, University of Pune, Pune 411 007 (India); Kanjilal, D. [Nuclear Science Centre, New Delhi (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411 007 (India); Dhole, S.D. [Department of Physics, University of Pune, Pune 411 007 (India)]. E-mail: sanjay@physics.unipune.ernet.in

    2006-03-15

    CZ-grown, n-doped crystalline Si(1 1 1) of resistivity 60 {omega} cm and 140 {omega} cm were irradiated with 65 MeV energy oxygen ions, in the fluence range of 2 x 10{sup 1}-10{sup 14} ions/cm{sup 2}. The depth and spatial profile of excess minority carrier recombination time {tau} (lifetime) was measured using photoconductive decay (PCD) method. Lifetime measurements were carried out before the stopping range of impinging ions. Results show a monotonous decrease in lifetime with fluence, which is attributed to defect creation mechanism by electronic energy loss based on the thermal spike model. Also, surface modification is expected with a small loss in crystalline quality. This surface is considered to be a multi-crystalline surface with large grain boundaries that act as trapping sites for excess holes in n-Si(1 1 1). Annealing of the irradiated samples showed a near complete recovery at 750 deg. C for a period of 1 h.

  10. POSITRON-ELECTRON DECAY OF SI-28, AT AN EXCITATION-ENERGY OF 50-MEV

    NARCIS (Netherlands)

    BUDA, A; BACELAR, JC; BALANDA, A; VANDERPLOEG, H; SUJKOWSKI, Z; VANDERWOUDE, A

    1993-01-01

    The electron-positron pair decay of Si-28 at 50 MeV excitation produced by the isospin T=0 (alpha + Mg-24) and the mixed isospin T=0,1 (He-3 + Mg-25) reactions has been studied using a special designed Positron-Electron pair spectrometer PEPSI.

  11. Positron-electron decay of 28Si at an excitation energy of 50 MeV

    International Nuclear Information System (INIS)

    Buda, A.; Bacelar, J.C.; Balanda, A.; Ploeg, H. van der; Sujkowski, Z.; Woude, A. van der

    1993-01-01

    The electron-positron pair decay of 28 Si at 50 MeV excitation produced by the isospin T=0 (α+ 24 Mg) and the mixed isospin T=0, 1 ( 3 He+ 25 Mg) reactions has been studied using a special designed Positron-Electron pair spectrometer PEPSI. (orig.)

  12. Ion irradiation enhanced crystal nucleation in amorphous Si thin films

    International Nuclear Information System (INIS)

    Im, J.S.; Atwater, H.A.

    1990-01-01

    The nucleation kinetics of the amorphous-to-crystal transition of Si films under 1.5 MeV Xe + irradiation have been investigated by means of in situ transmission electron microscopy in the temperature range T=500--580 degree C. After an incubation period during which negligible nucleation occurs, a constant nucleation rate was observed in steady state, suggesting that homogeneous nucleation occurred. Compared to thermal crystallization, a significant enhancement in the nucleation rate during high-energy ion irradiation (five to seven orders of magnitude) was observed with an apparent activation energy of 3.9±0.75 eV

  13. Elastic scattering of 16O on 28Si between 45.0 and 73.5 MeV

    International Nuclear Information System (INIS)

    Shkolnik, V.; Dehnhard, D.; Kubono, S.; Franey, M.A.; Tripp, S.; Artz, J.L.; Weber, D.J.

    1977-01-01

    Angular distributions of 16 O elastically scattering by Si isotopes were analyzed by the optical model. Differential cross sections are shown for all isotopes at 60 MeV, and for 28 Si at energies from 45 to 63 MeV. The potentials found are discussed in some detail; the best fits were produced by surface-transparent potentials. 3 figures, 2 tables

  14. Identification and imaging of modern paints using Secondary Ion Mass Spectrometry with MeV ions

    Science.gov (United States)

    Bogdanović Radović, Iva; Siketić, Zdravko; Jembrih-Simbürger, Dubravka; Marković, Nikola; Anghelone, Marta; Stoytschew, Valentin; Jakšić, Milko

    2017-09-01

    Secondary Ion Mass Spectrometry using MeV ion excitation was applied to analyse modern paint materials containing synthetic organic pigments and binders. It was demonstrated that synthetic organic pigments and binder components with molecular masses in the m/z range from 1 to 1200 could be identified in different paint samples with a high efficiency and in a single measurement. Different ways of mounting of mostly insulating paint samples were tested prior to the analysis in order to achieve the highest possible yield of pigment main molecular ions. As Time-of-Flight mass spectrometer for MeV Secondary Ion Mass Spectrometry is attached to the heavy ion microprobe, molecular imaging on cross-sections of small paint fragments was performed using focused ions. Due to the fact that molecules are extracted from the uppermost layer of the sample and to avoid surface contamination, the paint samples were not embedded in the resin as is usually done when imaging of paint samples using different techniques in the field of cultural heritage.

  15. Precipitation in Ni-Si during electron and ion irradiation

    Science.gov (United States)

    Lucas, G. E.; Zama, T.; Ishino, S.

    1986-11-01

    This study was undertaken to further investigate how the nature of the irradiation condition affects precipitation in a dilute Ni-Si system. Transmission electron microscopy (TEM) discs of a solution annealed Ni alloy containing 5 at% Si were irradiated with 400 keV Ar + ions, 200 keV He + ions and 1 MeV electrons at average displacement rates in the range 2 × 10 -5dpa/s to 2 × 10 -3dpa/s at temperatures in the range 25°C to 450°C. Samples irradiated with electrons were observed in situ in an HVEM, while ion irradiated specimens were examined in a TEM after irradiation. Precipitation of Ni 3Si was detected by the appearance of superlattice spots in the electron diffraction patterns. It was found that as the mass of the irradiating species increased, the lower bound temperature at which Ni 3Si precipitation was first observed increased. For electron irradiation, the lower bound temperature at 2 × 10 -3dpa/s was ˜125°C, whereas for 400 keV Ar + irradiation at a similar average displacement rate the lower boundary was approximately 325°C. This suggests that cascade disordering competes with radiation induced solute segregation.

  16. Precipitation in Ni-Si during electron and ion irradiation

    International Nuclear Information System (INIS)

    Lucas, G.E.; Zama, T.; Ishino, S.

    1986-01-01

    This study was undertaken to further investigate how the nature of the irradiation condition affects precipitation in a dilute Ni-Si system. Transmission electron microscopy (TEM) discs of a solution annealed Ni alloy containing 5 at% Si were irradiated with 400 keV Ar + ions, 200 keV He + ions and 1 MeV electrons at average displacement rates in the range 2x10 -5 dpa/s to 2x10 -3 dpa/s at temperatures in the range 25 0 C to 450 0 C. Samples irradiated with electrons were observed in situ in an HVEM, while ion irradiated specimens were examined in a TEM after irradiation. Precipitation of Ni 3 Si was detected by the appearance of superlattice spots in the electron diffraction patterns. It was found that as the mass of the irradiating species increased, the lower bound temperature at which Ni 3 Si precipitation was first observed increased. For electron irradiation, the lower bound temperature at 2x10 -3 dpa/s was ∝125 0 C, whereas for 400 keV Ar + irradiation at a similar average displacement rate the lower boundary was approximately 325 0 C. This suggests that cascade disordering competes with radiation induced solute segregation. (orig.)

  17. Thin film adhesion modification by MeV ions

    International Nuclear Information System (INIS)

    Sugden, S.

    1991-08-01

    The adhesion of thin films, and in particular the way in which such adhesion may be improved by irradiation, is rather poorly understood. The radiation enhanced adhesion effect has been investigated through the use of Ultra High Vacuum sample preparation, analysis and irradiation techniques, in order to gain control over surface and interface composition. In the systems studied, Au on Ta, Au on Si and Ag on Si, films deposited on atomically clean surfaces show good adhesion, and no evidence of enhancement due to irradiation is observed in the case of such clean interfaces. The results are entirely consistent with radiation enhanced adhesion being due to radiolytic effects on contaminant containing layers at the film/substrate interface. In addition, on silicon substrates the observations highlight the superiority of thermal cleaning over low energy sputtering as a route for producing a clean surface. A model of the radiation enhanced adhesion observations for dirty interface systems is developed, which takes into account the two dimensional nature of the ion energy deposition process. All the observations on such systems are broadly consistent with an activation energy for the process of approximately 5 eV. This value is sufficiently large to bring about chemical bonding rearrangement at the critical film/substrate interface. (Author)

  18. Amorphization and the effect of implanted ions in SiC

    International Nuclear Information System (INIS)

    Snead, L.L.; Zinkle, S.J.

    1994-01-01

    The effects of implanted ion chemistry and displacement damage on the amorphization threshold dose of SiC were studied using cross-section transmission electron microscopy. Room temperature as well as 200 and 400 C irradiations were carried out with 3.6 MeV Fe, 1.8 MeV Cl, 1 MeV He or 0.56 MeV Si ions. The room temperature amorphization threshold dose in irradiated regions well separated from the implanted ions was found to range from 0.3 to 0.5 dpa for the four different ion species. The threshold dose for amorphization in the He, Si and Fe ion-implanted regions was also ∼0.3 to 0.5 dpa. On the other hand, the amorphization threshold in the Cl-implanted region was only about 0.1 dpa. The volume change associated with amorphization was ∼17%. No evidence for amorphization was obtained in specimens irradiated at 200 or 400 C. An understanding of the microstructural evolution of SiC under irradiation is critical to the application of these materials in fusion energy systems

  19. 0.5 to 6 MeV Ar ion induced X-ray emission in view to analytical application

    International Nuclear Information System (INIS)

    Tenorio Castilleros, M.D.

    1979-01-01

    A study of the X-ray emission induced by 0.5 to 6 MeV Ar ions has been realized in view of multielemental analytical applications. The historical development of the use of heavy ion induced X-ray emission in analysis and the theoretical background of inner-shell ionization in heavy ion-atom collisions are described. The emission of non characteristic X-rays and the effects related to the penetration of heavy ions in matter are also related. The experimental part contains a description of the experimental devices and of the X-ray spectra fitting method. Thick target yields as a function of the target Z and the Ar ion energy are reported. The analytical possibilities are examined and an application to the analysis of Si and Cl in cadmium telluride crystals is given [fr

  20. Damage growth in Si during self-ion irradiation: A study of ion effects over an extended energy range

    International Nuclear Information System (INIS)

    Holland, O.W.; El-Ghor, M.K.; White, C.W.

    1989-01-01

    Damage nucleation/growth in single-crystal Si during ion irradiation is discussed. For MeV ions, the rate of growth as well as the damage morphology are shown to vary widely along the track of the ion. This is attributed to a change in the dominant, defect-related reactions as the ion penetrates the crystal. The nature of these reactions were elucidated by studying the interaction of MeV ions with different types of defects. The defects were introduced into the Si crystal prior to high-energy irradiation by self-ion implantation at a medium energy (100 keV). Varied damage morphologies were produced by implanting different ion fluences. Electron microscopy and ion-channeling measurements, in conjunction with annealing studies, were used to characterize the damage. Subtle changes in the predamage morphology are shown to result in markedly different responses to the high-energy irradiation, ranging from complete annealing of the damage to rapid growth. These divergent responses occur over a narrow range of dose (2--3 times 10 14 cm -2 ) of the medium-energy ions; this range also marks a transition in the growth behavior of the damage during the predamage implantation. A model is proposed which accounts for these observations and provides insight into ion-induced growth of amorphous layers in Si and the role of the amorphous/crystalline interface in this process. 15 refs, 9 figs

  1. Structural, thermal and optical behavior of 84 MeV oxygen and 120 MeV silicon ions irradiated PES

    International Nuclear Information System (INIS)

    Samra, Kawaljeet Singh; Thakur, Sonika; Singh, Lakhwant

    2011-01-01

    In order to study structural, thermal and optical behavior, thin flat samples of polyethersulfone were irradiated with oxygen and silicon ions. The changes in properties were analyzed using different techniques viz: X-ray diffraction, thermo-gravimetric analysis, Fourier transform infrared, UV-visible and photoluminescence spectroscopy. A noticeable increase in the intensity of X-ray diffraction peaks was observed after irradiation with 84 MeV oxygen ions at low and medium fluences, which may be attributed to radiation-induced cross-linking in polymer. Fourier transform infrared and thermo-gravimetric analysis corroborated the results of X-ray diffraction analysis. No noticeable change in the Fourier transform infrared spectra of oxygen ion irradiated polyethersulfone were observed even at the highest fluence of 1 x 10 13 ions cm -2 , but after irradiation with silicon ions, a reduction in intensity of almost all characteristic bands was revealed. An increase in the activation energy of decomposition of polyethersulfone was observed after irradiation with 84 MeV oxygen ions up to medium fluences but degradation was revealed at higher fluences. Similar trends were observed by photoluminescence analysis.

  2. High energy (MeV) ion beam modifications of sputtered MoS2 coatings on sapphire

    International Nuclear Information System (INIS)

    Bhattacharya, R.S.; Rai, A.K.; Erdemir, A.

    1991-01-01

    The present article reports on the results of our investigations of high-energy (MeV) ion irradiation on the microstructural and tribological properties of dc magnetron sputtered MoS 2 films. Films of thicknesses 500-7500 A were deposited on NaCl, Si and sapphire substrates and subsequently ion irradiated by 2 MeV Ag + ions at a dose of 5x10 15 cm -2 . Scanning and transmission electron microscopy. Rutherford backscattering and X-ray diffraction techniques were utilized to study the structural, morphological and compositional changes of the film due to ion irradiation. The friction coefficient and sliding life were determined by pin-on-disc tests. Both as-deposited and ion-irradiated films were found to be amorphous having a stoichiometry of MoS 1.8 . A low friction coefficient in the range 0.03-0.04 was measured for both as-deposited and ion-irradiated films. However, the sliding life of ion-irradiated film was found to increase more than tenfold compared to as-deposited films indicating improved bonding at the interface. (orig.)

  3. Electron and ion currents relevant to accurate current integration in MeV ion backscattering spectrometry

    International Nuclear Information System (INIS)

    Matteson, S.; Nicolet, M.A.

    1979-01-01

    The magnitude and characteristics of the currents which flow in the target and the chamber of an MeV ion backscattering spectrometer are examined. Measured energy distributions and the magnitude of high-energy secondary electron currents are reported. An empirical universal curve is shown to fit the energy distribution of secondary electrons for several combinations of ion energy, targets and ion species. The magnitude of tertiary electron currents which arise at the vacuum vessel walls is determined for various experimental situations and is shown to be non-negligible in many cases. An experimental arrangement is described which permits charge integrations to 1% arruracy without restricting access to the target as a Faraday cage does. (Auth.)

  4. 29Si(d,3He)28Al reaction at 29 MeV

    International Nuclear Information System (INIS)

    Vernotte, J.; Berrier-Ronsin, G.; Fortier, S.; Hourani, E.; Kalifa, J.; Khendriche, A.; Maison, J.M.; Rosier, L.H.; Rotbard, G.

    1994-01-01

    The 29 Si(d, 3 He) 28 Al reaction has been investigated at 29 MeV incident energy. Observations using a split-pole magnetic spectrograph have been made of 55 levels of 28 Al in the range of excitation energy between 0 and 6.7 MeV. Most of them have been identified with 28 Al levels which have been previously observed by other techniques. The spectroscopic factors have been obtained for 23 of these levels through distorted-wave Born approximation analyses of measured angular distributions. The levels at E x =3.105 and 3.762 MeV have been definitely assigned J π =1 + and 0 + , respectively. Four levels which are populated through the pickup of a l p =1 proton have been observed at E x =4.998, 5.406, 6.021, and 6.652 MeV. The excitation energies and spectroscopic factors for positive-parity states were compared with the results of a recent, complete sd-shell space, shell-model calculation. This comparison led to the identification of 21 shell-model levels with experimental levels. This comparison seems accurate enough to make very likely the J π =3 + assignment for the levels at E x =2.988 and 4.597 MeV which were previously assigned J π =(1,3) +

  5. TEM study of damage recovery in SiC by swift Xe ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Skuratov, V.A., E-mail: skuratov@jinr.ru [Joint Institute for Nuclear Research, Dubna (Russian Federation); O’Connell, J. [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Sohatsky, A.S. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Neethling, J. [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2014-05-01

    The microstructure of 4H–SiC samples subsequently irradiated with low energy He (10 keV), Ti (220 keV) and high energy (167 MeV) Xe ions has been studied using cross-sectional transmission electron microscopy. It was found that xenon ions with fluences above 10{sup 13} cm{sup −2} restore crystallinity in a heavily damaged partially amorphous zone. No, or negligible damage recovery is observed in fully amorphized layers of silicon carbide.

  6. TEM study of damage recovery in SiC by swift Xe ion irradiation

    International Nuclear Information System (INIS)

    Skuratov, V.A.; O’Connell, J.; Sohatsky, A.S.; Neethling, J.

    2014-01-01

    The microstructure of 4H–SiC samples subsequently irradiated with low energy He (10 keV), Ti (220 keV) and high energy (167 MeV) Xe ions has been studied using cross-sectional transmission electron microscopy. It was found that xenon ions with fluences above 10 13 cm −2 restore crystallinity in a heavily damaged partially amorphous zone. No, or negligible damage recovery is observed in fully amorphized layers of silicon carbide

  7. Search for diffusion of counter-passing MeV ions in the TFTR tokamak

    International Nuclear Information System (INIS)

    Zweben, S.J.; Boivin, R.; Chang, C.S.; Hammett, G.; Mynick, H.E.

    1991-07-01

    Confinement studies of MeV ions will play an important role in the research leading to burning plasmas in tokamaks, since any significant radial transport of MeV alpha particles will affect the heating rate or heating profiles of these plasmas. Because the energy, gyroradius, and collisionality of these MeV ions is very different from that of the background plasma, their transport rates cannot be assumed equal to those of the bulk plasma ions. Note that the desired confinement time for 3.5 MeV alphas is set by their thermalization time, which can be up to τ th,α ∼1 sec for the steady-state phase of ITER, requiring D 2 /sec. This is equivalent to over ∼100,000 alpha particle transits of the torus. 28 refs., 24 figs., 2 tabs

  8. Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

    International Nuclear Information System (INIS)

    Khamsuwan, J.; Intarasiri, S.; Kirkby, K.; Chu, P.K.; Singkarat, S.; Yu, L.D.

    2012-01-01

    This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 10 13 and 1 × 10 14 ions/cm 2 at elevated temperatures for annealing. X-ray diffraction, Raman scattering, infrared spectroscopy and transmission electron microscopy were used to characterize the formation of nanocrystalline SiC. Photoluminescence was measured from the samples. The results demonstrated that MeV-heavy-ion-beam annealing could indeed induce crystallization of SiC nanocrystals and enhance emission of photoluminescence with violet bands dominance due to the quantum confinement effect.

  9. Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs

    Energy Technology Data Exchange (ETDEWEB)

    Usman, Muhammad; Hallen, Anders; Ghandi, Reza; Domeij, Martin, E-mail: musman@kth.s [Microelectronics and Applied Physics, School of Communication and Information Technology, Royal Institute of Technology (KTH), Electrum 229, 16440 Kista (Sweden)

    2010-11-01

    Degradation of 4H-SiC power bipolar junction transistors (BJTs) under the influence of a high-energy helium ion beam was studied. Epitaxially grown npn BJTs were implanted with 3.0 MeV helium in the fluence range of 10{sup 10}-10{sup 11} cm{sup -2}. The devices were characterized by their current-voltage (I-V) behaviour before and after the implantation, and the results showed a clear degradation of the output characteristics of the devices. Annealing these implanted devices increased the interface traps between passivation oxide and the semiconductor, resulting in an increase of base current in the low-voltage operation range.

  10. XRD study of yttria stabilized zirconia irradiated with 7.3 MeV Fe, 10 MeV I, 16 MeV Au, 200 MeV Xe and 2.2 GeV Au ions

    Energy Technology Data Exchange (ETDEWEB)

    Nakano, K.; Yoshizaki, H. [Department of Materials Science, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Saitoh, Y. [Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Ishikawa, N. [Tokai Research and Development Center, Tokai-mura, Naka-gun, Ibaraki 319-1195 (Japan); Iwase, A., E-mail: iwase@mtr.osakafu-u.ac.jp [Department of Materials Science, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan)

    2016-03-01

    To simulate energetic neutron irradiation effects, yttria-stabilized zirconia (YSZ) which is one of the major materials for electrical corrosion potential sensors (ECP sensors) was irradiated with heavy ions at energies ranging from 7.3 MeV to 2.2 GeV. Ion irradiation effects on the lattice structure were analyzed using the X-ray diffraction (XRD). The increase in lattice constant was induced by the ion irradiation. It was dominated by the elastic collision process and not by the electronic excitation process. The lattice disordering which was observed as a broadening of XRD peaks was also induced by the irradiation especially for 200 MeV Xe ion irradiation. The present result suggests that the expansion and/or the disordering of YSZ lattice induced by energetic neutrons may affect the durability of a joint interface between a metal housing and YSZ membrane for the usage of ECP sensors in nuclear power reactors.

  11. Scanning probe microscopy of single Au ion implants in Si

    International Nuclear Information System (INIS)

    Vines, L.; Monakhov, E.; Maknys, K.; Svensson, B.G.; Jensen, J.; Hallen, A.; Kuznetsov, A. Yu.

    2006-01-01

    We have studied 5 MeV Au 2+ ion implantation with fluences between 7 x 10 7 and 2 x 10 8 cm -2 in Si by deep level transient spectroscopy (DLTS) and scanning capacitance microscopy (SCM). The DLTS measurements show formation of electrically active defects such as the two negative charge states of the divacancy (V 2 (=/-) and V 2 (-/0)) and the vacancy-oxygen (VO) center. It is observed that the intensity of the V 2 (=/-) peak is lower compared to that of V 2 (-/0) by a factor of 5. This has been attributed to a highly localized distribution of the defects along the ion tracks, which results in trapping of the carriers at V 2 (-/0) and incomplete occupancy of V 2 (=/-). The SCM measurements obtained in a plan view show a random pattern of regions with a reduced SCM signal for the samples implanted with fluence above 2 x 10 8 cm -2 . The reduced SCM signal is attributed to extra charges associated with acceptor states, such as V 2 (-/0), formed along the ion tracks in the bulk Si. Indeed, the electron emission rate from the V 2 (-/0) state is in the range of 10 kHz at room temperature, which is well below the probing frequency of the SCM measurements, resulting in 'freezing' of electrons at V 2 (-/0)

  12. Cluster ion-surface interactions: from meV to MeV energies

    Energy Technology Data Exchange (ETDEWEB)

    Nordlund, Kai; Meinander, Kristoffer; Jaervi, Tommi T.; Peltola, Jarkko; Samela, Juha [Accelerator Laboratory, University of Helsinki (Finland)

    2008-07-01

    The nature of cluster ion-surface interactions changes dramatically with the kinetic energy of the incoming cluster species. In this talk I review some of our recent work on the nature of cluster-surface interactions spanning an energy range from a few MeV/cluster to about 1 MeV/cluster and cluster sizes in the range of 10 - 1000 atoms/cluster. In the energy range of a few MeV/cluster ion, the kinetic energy of the incoming ion is insignificant compared to the energy gained when the surface potential energy at the cluster-surface interface is released and partly translated into kinetic energy. Even in this energy regime I show that surprisingly drastic effects can occur. When the energy of the incoming cluster is raised to a few eV/atom, the kinetic energy of the incoming cluster starts to affect the deposition. It will cause the cluster to entirely reform on impact. When the energy is raised to the range of keV's/cluster, the clusters start to penetrate the sample, fairly similar to conventional ion implantation. However, in dense targets the cluster ions may stick close to each other long enough to cause a significant enhancement of the heat spike in the material. Finally, I show that at kinetic energies around 1 MeV/cluster the cluster enhancement of the heat spike may lead to dramatic surface effects.

  13. MeV ion loss during 3He minority heating in TFTR

    International Nuclear Information System (INIS)

    Zweben, S.J.; Hammett, G.; Boivin, R.; Phillips, C.; Wilson, R.

    1992-01-01

    The loss of MeV ions during 3 He ICRH minority heating experiments has been measured using scintillator detectors near the wall of TFTR. The observed MeV ion losses to the bottom (90 degrees poloidal) detector are generally consistent with the expected first-orbit loss of D- 3 He alpha particle fusion products, with an inferred global reaction rate up to ∼10 16 reactions/sec. A qualitatively similar but unexpectedly large loss occurs 45 degrees poloidally below the outer midplane. This additional loss might be due to ICRH tail ions or to ICRH wave-induced loss of previously confined fusion products

  14. Comparison of the ion induced charge collection in Si epilayer and SOI devices

    International Nuclear Information System (INIS)

    Hirao, Toshio; Mori, Hidenobu; Laird, Jamie Stuart; Onoda, Shinobu; Itoh, Hisayoshi

    2003-01-01

    It is known that the single-event phenomena (SEP) are the malfunction of micro electronics devices caused by the impact of an energetic heavy ion. Improving the tolerance of devices to the SEP requires a better understanding of basic charge collection mechanisms on the timescales of the order of picoseconds. In order to better elucidate these mechanisms, we measure the fast transient current resulting from heavy ion strikes with a fast sampling data collection system and a heavy ion microbeam line at JAERI. In this paper we report on differences in both the transient current and charge collection from 15 MeV carbon ions on silicon-on-insulator, Si epilayer and bulk p + n junction diodes and charge transportation under MeV ion injection is discussed

  15. MeV-Si ion irradiation effects on the electrical properties of HfO2 thin films on Si

    International Nuclear Information System (INIS)

    Yu Xiangkun; Shao Lin; Chen, Q.Y.; Trombetta, L.; Wang Chunyu; Dharmaiahgari, Bhanu; Wang Xuemei; Chen Hui; Ma, K.B.; Liu Jiarui; Chu, W.-K.

    2006-01-01

    We studied the irradiation effect of 2-MeV Si ions on HfO 2 films deposited on Si substrates. HfO 2 films ∼11 nm thick were deposited onto Si substrates by chemical vapor deposition. The samples were then irradiated by 2-MeV Si ions at a fluence of 1 x 10 14 cm -2 at room temperature, followed by rapid thermal annealing at 1000 deg. C for 10 s. After annealing, a layer of aluminum was deposited on the samples as the gate electrode to form metal-oxide-semiconductor (MOS) capacitor structures. Rutherford backscattering spectrometry and electrical measurement of both capacitance and current as a function of voltage were used to characterize the samples before and after annealing. Non-insulating properties of the HfO 2 films deteriorated immediately after the ion irradiation, but rapid thermal annealing effectively repaired the irradiation damages, as reflected in improved capacitance versus voltage characteristics and significant reduction of leakage current in the MOS capacitors

  16. Transmission property and its applications of MeV ion beams with various capillaries

    International Nuclear Information System (INIS)

    Fujita, N; Ishii, K; Ogawa, H

    2012-01-01

    In order to clarify transmission properties of an ion beam extracted with various capillaries into the air, we have measured intensity distributions for the core and the halo components of MeV ion beams using various capillaries. In addition, we have performed in-air-RBS and in-air-PIXE from the point of the application. At the conference, progress report of transmission properties of ion beams with various capillaries and its applications will be presented.

  17. Large scale silver nanowires network fabricated by MeV hydrogen (H+) ion beam irradiation

    International Nuclear Information System (INIS)

    S, Honey; S, Naseem; A, Ishaq; M, Maaza; M T, Bhatti; D, Wan

    2016-01-01

    A random two-dimensional large scale nano-network of silver nanowires (Ag-NWs) is fabricated by MeV hydrogen (H + ) ion beam irradiation. Ag-NWs are irradiated under H +  ion beam at different ion fluences at room temperature. The Ag-NW network is fabricated by H + ion beam-induced welding of Ag-NWs at intersecting positions. H +  ion beam induced welding is confirmed by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Moreover, the structure of Ag NWs remains stable under H +  ion beam, and networks are optically transparent. Morphology also remains stable under H +  ion beam irradiation. No slicings or cuttings of Ag-NWs are observed under MeV H +  ion beam irradiation. The results exhibit that the formation of Ag-NW network proceeds through three steps: ion beam induced thermal spikes lead to the local heating of Ag-NWs, the formation of simple junctions on small scale, and the formation of a large scale network. This observation is useful for using Ag-NWs based devices in upper space where protons are abandoned in an energy range from MeV to GeV. This high-quality Ag-NW network can also be used as a transparent electrode for optoelectronics devices. (paper)

  18. Microscopic analysis of alpha scattering from sup 28 Si at 40 and 45 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Roy, S.; Dey, T.; Goswami, A. (Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Calcutta 700064 (India)); Chintalapudi, S.N.; Banerjee, S.R. (Variable Energy Cyclotron Centre, 1/AF, Bidhannagar, Calcutta 700064 (India))

    1992-06-01

    Angular distributions for the elastic and inelastic alpha scattering from {sup 28}Si at {ital E}{sub {alpha}}=40 and 45 MeV are analyzed in the framework of microscopic folding model. Transition densities are calculated from improved {ital s}-{ital d} shell-model wave functions and are also compared with those extracted from inelastic electron scattering data. The density-dependent Jeukenne-Lejeune-Mahaux interaction is used, besides the M3Y interaction, in an attempt to fit the large-angle data. Fairly good agreement with the data is obtained. The extracted {ital M}{sub {ital n}}/{ital M}{sub {ital p}} value for the 2{sup +} excited state of {sup 28}Si also compares well with the shell-model prediction.

  19. Microscopic analysis of alpha scattering from 28Si at 40 and 45 MeV

    International Nuclear Information System (INIS)

    Roy, S.; Dey, T.; Goswami, A.; Chintalapudi, S.N.; Banerjee, S.R.

    1992-01-01

    Angular distributions for the elastic and inelastic alpha scattering from 28 Si at E α =40 and 45 MeV are analyzed in the framework of microscopic folding model. Transition densities are calculated from improved s-d shell-model wave functions and are also compared with those extracted from inelastic electron scattering data. The density-dependent Jeukenne-Lejeune-Mahaux interaction is used, besides the M3Y interaction, in an attempt to fit the large-angle data. Fairly good agreement with the data is obtained. The extracted M n /M p value for the 2 + excited state of 28 Si also compares well with the shell-model prediction

  20. High-resolution Auger spectroscopy on 79 MeV Ar5+, 89 MeV Ar6+, and 136 MeV Ar7+ ions after excitation by helium

    International Nuclear Information System (INIS)

    Schneider, T.

    1988-01-01

    In this thesis the atomic structure of highly excited Ar 6+ and Ar 7+ ions was studied. For this 79 MeV Ar 5+ , 89 MeV Ar 6+ , and 136 MeV Ar 7+ ions of a heavy ion accelerator were excited by a He gas target to autoionizing states and the Auger electrons emitted in the decay were measured in highly-resolving state. The spectra were taken under an observational angle of zero degree relative to the beam axis in order to minimize the kinematical broadening of the Auger lines. (orig./HSI) [de

  1. Study of ({alpha}, {sup 3}He) and ({alpha}, t) reactions on {sup 28}Si at 45 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Darshan, V.P.; Sathyavathiamma, M.P.; Ramaswamy, C.R.; Raja Rao, M.; Puttaswamy, N.G.; Banerjee, S.R.; Chintalapudi, S.N. [Dept. of Phys., Bangalore Univ. (India)

    1995-03-01

    The {sup 28}Si({alpha}, {sup 3}He){sup 29}Si, {sup 28}Si({alpha}, t){sup 29}P and Si({alpha}, {alpha})Si reactions were studied at E{sub {alpha}} = 45 MeV. Exact finite-range (EFR) DWBA analysis was carried out for the transitions to the ground state and to five excited states in {sup 29}Si and {sup 29}P. Spectroscopic strengths G were extracted for all the states and were compared with the predictions from shell-model and quasi-particle core-coupling calculations. Similar EFR-DWBA analyses were carried out from available (unpublished) data for the {sup 28}Si({alpha}, {sup 3}He){sup 29}Si reaction at E{sub {alpha}} = 64.9 and 120 MeV, and for the {sup 28}Si({alpha}, t){sup 29}P reaction at E{sub {alpha}} = 50 and 64.9 MeV. The comparison of experimental and theoretical values of G are provided. (author)

  2. The studies of surface properties of 1.5 MeV Si-implanted silicon by multiphonon Raman spectrum

    International Nuclear Information System (INIS)

    Huang, X.

    1995-01-01

    The surface layer of crystalline silicon implanted by 1.5 MeV Si ions with doses ranging from 1 x 10 11 to 1 x 10 15 Si + cm -2 has been studied by two-phonon Raman spectra in both the acoustical overtone region and optical overtone region. Two-phonon Raman line intensities and shifts have been used to investigate the properties in the skin layer. The experimental two-phonon Raman spectra showed a decrease in intensity for both optical and acoustical two-phonon Raman peaks and also showed shifts by different amounts in different directions depending on the particular phonons. The stress values obtained by two-phonon Raman line shifts are compared with those obtained previously by one-phonon Raman shifts. The comparison shows that the surface defects make no contribution to two-phonon Raman line shifts. The two-phonon Raman line shifts show that the surface stress increases as a function of implantation doses. (author)

  3. Depth distribution of damage in copper irradiated with MeV, Ni and He ions

    International Nuclear Information System (INIS)

    Narayan, J.; Noggle, T.S.; Oen, O.S.

    1975-01-01

    Transmission electron microscopy was used to study radiation damage as a function of depth caused by 58 and 4-MeV 58 Ni and 1-MeV He ions in copper single crystals at ambient temperature. The experimental damage density vs penetration depth distributions were compared with calculations based on the atomic collision theory of Lindhard et al. (LSS). For 58-MeV Ni ions, the calculated damage profile using the theoretical LSS value of the electronic stopping parameter (k = 0.167) agrees well with experiment. However, for 4-MeV Ni ions it is necessary to use k = 0.12 to get agreement with the experimental data. In the case of 1-MeV He, the depth location of the calculated damage peak is in good agreement with experiment when the electronic stopping determined by Chu and Powers is used whereas it is about 15 percent too close to the surface using the tables of Northcliffe and Schilling. (auth)

  4. Study of tapered glass capillary focusing MeV ion beam

    International Nuclear Information System (INIS)

    Gong Zhiyu; Yan Sha; Ma Hongji; Nie Rui; Xue Jianming; Wang Yugang

    2012-01-01

    In recent years, tapered glass capillary ion beam focusing is developing rapidly. It is attractive for simple, compact, low cost and easy use. However, the focusing mechanism for MeV ion beams is still indistinct. We present several experimental results of focusing 2 MeV He + beam. Ion beams were focused by tapered glass capillaries with various outlet inner diameters from several micron to hundred micron. The current densities, angle divergences and energy spectra of the transmitted ion beams are measured. The results proved that 2 MeV He + ions can focused and guided by our capillaries. The energy spectra show that a great part of transmitted ions experienced obvious energy loss, which is different from results of others research groups. We discussed the reason and charged it to the larger incident angle. Considered the incident ions with larger incident angle, the charge will distribute in a layer of micro meter depth in the capillary’s inner wall, but not the surface. The energy loss and many other spectra characters can be explained in this way.

  5. The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si

    Energy Technology Data Exchange (ETDEWEB)

    Wallace, J. B.; Aji, L. B. Bayu; Martin, A. A.; Shin, S. J.; Shao, L.; Kucheyev, S. O.

    2017-01-06

    The formation of stable radiation damage in crystalline solids often proceeds via complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. The dominant dynamic annealing processes, however, remain unknown even for crystalline Si. Here, we use a pulsed ion beam method to study defect dynamics in Si bombarded in the temperature range from -20 to 140 °C with 500 keV Ar ions. Results reveal a defect relaxation time constant of ~10–0.2 ms, which decreases monotonically with increasing temperature. The dynamic annealing rate shows an Arrhenius dependence with two well-defined activation energies of 73 ± 5 meV and 420 ± 10 meV, below and above 60 °C, respectively. Rate theory modeling, bench-marked against this data, suggests a crucial role of both vacancy and interstitial diffusion, with the dynamic annealing rate limited by the migration and interaction of vacancies.

  6. Mean range and energy of 28Si ions some Makrofol track detectors

    International Nuclear Information System (INIS)

    Shyam, S.; Mishra, R.; Tripathy, S.P.; Mawar, A.K.; Dwivedi, K.K.; Khathing, D.T.; Srivastava, A.; Avasthi, D.K.

    2000-01-01

    The rate of energy loss of the impinging ion as it passes through succeeding layers of the target material gives information regarding the nature of material and helps to calculate the range of the ions in a thick target in which the ions are stopped. Here the range, energy loss of 118 MeV 28 Si were measured in Makrofol-N, Makrofol-G and Makrofol-KG, using nuclear track technique. The experimental range data are compared with the theoretical values obtained from different computer codes. (author)

  7. MeV ion-beam analysis of optical data storage films

    Science.gov (United States)

    Leavitt, J. A.; Mcintyre, L. C., Jr.; Lin, Z.

    1993-01-01

    Our objectives are threefold: (1) to accurately characterize optical data storage films by MeV ion-beam analysis (IBA) for ODSC collaborators; (2) to develop new and/or improved analysis techniques; and (3) to expand the capabilities of the IBA facility itself. Using H-1(+), He-4(+), and N-15(++) ion beams in the 1.5 MeV to 10 MeV energy range from a 5.5 MV Van de Graaff accelerator, film thickness (in atoms/sq cm), stoichiometry, impurity concentration profiles, and crystalline structure were determined by Rutherford backscattering (RBS), high-energy backscattering, channeling, nuclear reaction analysis (NRA) and proton induced X-ray emission (PIXE). Most of these techniques are discussed in detail in the ODSC Annual Report (February 17, 1987), p. 74. The PIXE technique is briefly discussed in the ODSC Annual Report (March 15, 1991), p. 23.

  8. Contrast of dry and water-saturated arabidopsis seeds irradiated by MeV energy ions

    International Nuclear Information System (INIS)

    Mei Tao; Qin Huaili; Xue Jianming; Wang Yugang

    2007-01-01

    The dry and water-saturated seeds of Arabidopsis thaliana were irradiated by H + ions with 6.5 MeV in atmosphere. The ion fluence used in this experiment was in the range of 4 x 10 9 -1 x 10 14 ions/cm 2 . According to the structure of the seed and TRIM simulation, the ions with the energy of 6.5 MeV can penetrate the whole seed. The experiment shows that the fluence-response curves for the dry seeds and water-saturated seeds had distinct shoulders and reduced rapidly. The experimental results show that the water-imbibed seeds were more sensitive than the dry seeds and the reason is from free radicals reaction. A model has been constructed, and primely simulates the experiment data. (authors)

  9. Amorphization and recrystallization in MeV ion implanted InP crystals

    International Nuclear Information System (INIS)

    Xiong, F.; Nieh, C.W.; Jamieson, D.N.; Vreeland, T. Jr.; Tombrello, T.A.

    1988-01-01

    A comprehensive study of MeV- 15 N-ion-implanted InP by a variety of analytical techniques has revealed the physical processes involved in MeV ion implantation into III-V compound semiconductors as well as the influence of post-implantation annealing. It provides a coherent picture of implant distribution, structural transition, crystalline damage, and lattice strain in InP crystals induced by ion implantation and thermal annealing. The experimental results from the different measurements are summarized in this report. Mechanisms of amorphization by implantation and recrystallization through annealing in MeV-ion-implanted InP are proposed and discussed in light of the results obtained

  10. Theoretical study of cylindrical energy analyzers for MeV range heavy ion beam probes

    International Nuclear Information System (INIS)

    Fujisawa, A.; Hamada, Y.

    1993-07-01

    A cylindrical energy analyzer with drift spaces is shown to have a second order focusing for beam incident angle when the deflection angle is properly chosen. The analyzer has a possibility to be applied to MeV range heavy ion beam probes, and will be also available for accurate particle energy measurements in many other fields. (author)

  11. Suppression of X-radiation from 2 MeV ion electrostatic accelerator

    International Nuclear Information System (INIS)

    Ignat'ev, I.G.; Miroshnichenko, V.I.; Sirenko, A.M.; Storizhko, V.E.

    2008-01-01

    The paper presents results concerning studies of X-radiation from 2 MeV ion electrostatic accelerator 'Sokol' used for nuclear microprobe analysis. The radiation protection system of the accelerator was developed and tested. Tests of the system of the accelerator show that it reduces doses rate by two orders of magnitude

  12. Disorder accumulation and recovery in gold-ion irradiated 3C-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Weilin; Weber, William J.; Lian, Jie; Kalkhoran, N. M.

    2009-01-12

    A single-crystal 3C-SiC film on the Si/SiO2/Si (SIMOX) substrate was irradiated in different areas at 156 K with Au2+ ions to low fluences. The disorder profiles as a function of dose on both the Si and C sublattices have been determined in situ using a combination of 0.94 MeV D+ Rutherford backscattering spectrometry and nuclear reaction analysis in channeling geometry along the <100>, <110> and <111> axes. The results indicate that for the same damage state, the level of disorder on the Si sublattice in 3C-SiC follows a decreasing order along the <111>, <100> and <110> axes, while that on the C sublattice shows comparable values. Similar levels of Si and C disorder are observed along the <111> axis over the applied dose range. However, the level of C disorder is higher than that of Si disorder along either <100> or <110>. The amount of disorder recovery during thermal annealing processes depends on the sublattice (Si or C) and crystallographic orientation. Room-temperature recovery occurs for both sublattices in 3C-SiC irradiated to a dose of 0.047 dpa or lower. Significant recovery is observed along all directions during thermal annealing at 600 K. The results will be discussed and compared to those for 6H- and 4H-SiC under similar irradiation conditions.

  13. Effects of high-energy (MeV) ion implantation of polyester films

    International Nuclear Information System (INIS)

    Ueno, Keiji; Matsumoto, Yasuyo; Nishimiya, Nobuyuki; Noshiro, Mitsuru; Satou, Mamoru

    1991-01-01

    The effects of high-energy ion beam irradiation on polyester (PET) films using a 3 MeV tandem-type ion beam accelerator were studied. O, Ni, Pt, and Au as ion species were irradiated at 10 14 -10 15 ions/cm 2 on 50 μm thick PET films. Physical properties and molecular structure changes were studied by the surface resistivity measurements and RBS. The surface resistivity decreases with an increase in irradiation dose. At 10 15 ions/cm 2 irradiation, the surface resistivity is 10 8 Ω/□. According to RBS and XPS analyses, some carbon and oxygen atoms in the PET are replaced by implanted ions and the -C=O bonds are destroyed easily by the ion beam. (orig.)

  14. Study of radiation damage restoration and antimony ions redistribution in Si(1 0 0) and Si(1 1 1) crystals

    CERN Document Server

    Labbani, R; Chafi, Z

    2002-01-01

    In this work, we study the radiation damage restoration and antimony ions redistribution into and oriented silicon substrates. The samples are implanted with antimony to a dose of 5x10 sup 1 sup 4 Sb sup + cm sup - sup 2 at 60 keV energy, then annealed under oxygen atmosphere at 900 deg. C, 30 min. The thin layer of SiO sub 2 (which is formed on Si surface by dry oxidation and expected to prevent any loss of Sb sup + dopant during Si recovery) is removed by a 10% HF solution. The specimens are analyzed by H sup + Rutherford Backscattering Spectrometry operating at 0.3 MeV energy in both random and channelling modes. The values of the projected range, R sub p , the standard deviation, DELTA R sub p , and the dose of antimony ions, which are estimated with a simple program, are in agreement with tabulated ones. It is also shown that the surface damage restoration is better for Si(1 0 0) samples than for Si(1 1 1) ones, in other words, the radiation damage is more significant in Si(1 1 1) substrates. Moreover,...

  15. Polarized triton scattering from 26Mg, 27Al and 28Si at 17 MeV

    International Nuclear Information System (INIS)

    Hardekopf, R.A.; Brown, R.E.; Correll, F.D.; Ohlsen, G.G.

    1980-01-01

    Differential-cross-section and analyzing-power angular distributions were measured for 17 MeV tritons elastically scattered from targets of 26 Mg, 27 Al, and 28 Si in the angular range 20 to 160 0 . The experiment was performed at the Los Alamos Scientific Laboratory Van de Graaff facility using the Lamb-shift polarized triton source and the supercube scattering chamber. A pair of detector telescopes with angular resolutions of +-0.4 0 detected the reaction products, with mass identification and storage performed by an on-line computer. The triton beam intensity available at the target was about 70 nA with a polarization of 0.77. The target thicknesses were about 3 mg/cm 2 , although thinner targets were used for the 27 Al forward-angle data

  16. Semimicroscopic analysis of 6Li+28Si elastic scattering at 76 to 318 MeV

    Science.gov (United States)

    Hassanain, M. A.; Anwar, M.; Behairy, Kassem O.

    2018-04-01

    Using the α-cluster structure of colliding nuclei, the elastic scattering of 6Li+28Si at energies from 76 to 318 MeV has been investigated by the use of the real folding cluster approach. The results of the cluster analysis are compared with those obtained by the CDM3Y6 effective density- and energy-dependent nucleon-nucleon (NN) interaction based upon G -matrix elements of the M3Y-Paris potential. A Woods-Saxon (WS) form was used for the imaginary potential. For all energies and derived potentials, the diffraction region was well reproduced, except at Elab=135 and 154 MeV at large angle. These results suggest that the addition of the surface (DWS) imaginary potential term to the volume imaginary potential is essential for a correct description of the refractive structure of the 6Li elastic scattering distribution at these energies. The energy dependence of the total reaction cross sections and that of the real and imaginary volume integrals is also discussed.

  17. Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions

    International Nuclear Information System (INIS)

    Lulli, G.; Albertazzi, E.; Bianconi, M.; Ferri, M.

    2003-01-01

    Silicon on insulator layers doped with 8x10 20 As cm -3 and thermally equilibrated at 1100 deg. C, have been irradiated with 2 MeV Si + ions. Rutherford backscattering-channeling analysis shows an increase in As disorder upon irradiation significantly larger than the increase in Si disorder, while electrical measurements show a large decrease in electrical activation. Monte Carlo simulation of channeling angular scans suggests that the enhanced As disorder effect is due to the preferential relocation of dopant atoms slightly displaced from lattice sites, which appear the main reason responsible for the electrical deactivation in the unirradiated sample and are believed to be in the form of As-vacancy clusters. Upon 600 deg. C 15 s annealing, the As atoms randomly relocated by ion irradiation almost completely recover their original configuration, probably capturing vacancies and forming, again, the complexes dissociated by ion irradiation

  18. Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts

    International Nuclear Information System (INIS)

    Zhang, B.; Yu, W.; Zhao, Q.T.; Buca, D.; Breuer, U.; Hartmann, J.-M.; Holländer, B.; Mantl, S.; Zhang, M.; Wang, X.

    2013-01-01

    We have investigated the morphology and electrical properties of NiSiGe/SiGe contact by C + ions pre-implanted into relaxed Si 0.8 Ge 0.2 layers. Cross-section transmission electron microscopy revealed that both the surface and interface of NiSiGe were improved by C + ions implantation. In addition, the effective hole Schottky barrier heights (Φ Bp ) of NiSiGe/SiGe were extracted. Φ Bp was observed to decrease substantially with an increase in C + ion implantation dose

  19. Energy loss and straggling of MeV ions through biological samples

    International Nuclear Information System (INIS)

    Ma Lei; Wang Yugang; Xue Jianming; Chen Qizhong; Zhang Weiming; Zhang Yanwen

    2007-01-01

    Energy loss and energy straggling of energetic ions through natural dehydrated biological samples were investigated using transmission technique. Biological samples (onion membrane, egg coat, and tomato coat) with different mass thickness were studied, together with Mylar for comparison. The energy loss and energy straggling of MeV H and He ions after penetrating the biological and Mylar samples were measured. The experimental results show that the average energy losses of MeV ions through the biological samples are consistent with SRIM predictions; however, large deviation in energy straggling is observed between the measured results and the SRIM predictions. Taking into account inhomogeneity in mass density and structure of the biological sample, an energy straggling formula is suggested, and the experimental energy straggling values are well predicted by the proposed formula

  20. Development of an MeV ion beam lithography system in Jyvaeskylae

    Energy Technology Data Exchange (ETDEWEB)

    Gorelick, Sergey [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland)]. E-mail: Sergey.Gorelick@phys.jyu.fi; Ylimaeki, Tommi [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland); Sajavaara, Timo [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland); Laitinen, Mikko [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland); Sagari, A.R.A. [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland); Whitlow, Harry J. [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland)

    2007-07-15

    A lithographic facility for writing patterns with ion beams from cyclotron beams is under development for the Jyvaeskylae cyclotron. Instead of focusing and deflecting the beam with electrostatic and magnetic fields a different approach is used. Here a small rectangular beam spot is defined by the shadow of a computer-controlled variable aperture in close proximity to the sample. This allows parallel exposure of rectangular pattern elements of 5-500 {mu}m side with protons up to 6 MeV and heavy ions ({sup 20}Ne, {sup 85}Kr) up to few 100 MeV. Here we present a short overview of the system under construction and development of the aperture design, which is a critical aspect for all ion beam lithography systems.

  1. Surface structural determination of UO2(111) using MeV ions

    International Nuclear Information System (INIS)

    Thompson, K.A.; Ellis, W.P.; Taylor, T.N.; Valone, S.M.; Maggiore, C.J.

    1983-01-01

    The UO 2 (111) surface was studied using MeV ions incident along the and directions. In addition, this surface was well characterized by LEED and Auger analysis. A resonance at 3.05 MeV for 4 He elastic scattering from 16 O made it possible to study the surface peaks for uranium and oxygen simultaneously. By combining previous surface studies with detailed analysis of the surface peaks and rocking curves for this compound material, an outward relaxation of 0.19 A +- 0.01 A was determined for uranium

  2. Measurement of L X-ray intensity ratios in tantalum by proton and Si-ion impact

    International Nuclear Information System (INIS)

    Braich, J.S.; Dhal, B.B.; Singh, B.P.; Padhi, H.C.; Khurana, C.S.; Verma, H.R.

    1996-01-01

    The Lι, Lβ 1,4,6 , Lβ 2,15,3 , Lγ 1 , Lγ 2,3,6 and Lγ 4,4' , X-ray intensities relative to the Lα, caused by the impact of protons of energy 1 to 4.6 MeV and Si-ions of 70 to 98 MeV on Ta targets, h ave been measured. The results show that the intensity ratios drop significantly for all transitions except Lγ 2,3,6 /Lα with Si-ions of the same energy/amu as compared to those of protons. The experimental results have been compared with those based on the ECPSSR theoretical values. From the energy shift and change in the intensity ratios of various transitions caused by Si-ion impact, the number of outer shell vacancies in the M, N and O-shells simultaneous to that of L-shell have been estimat ed. (orig.)

  3. Short Communication on "In-situ TEM ion irradiation investigations on U3Si2 at LWR temperatures"

    Science.gov (United States)

    Miao, Yinbin; Harp, Jason; Mo, Kun; Bhattacharya, Sumit; Baldo, Peter; Yacout, Abdellatif M.

    2017-02-01

    The radiation-induced amorphization of U3Si2 was investigated by in-situ transmission electron microscopy using 1 MeV Kr ion irradiation. Both arc-melted and sintered U3Si2 specimens were irradiated at room temperature to confirm the similarity in their responses to radiation. The sintered specimens were then irradiated at 350 °C and 550 °C up to 7.2 × 1015 ions/cm2 to examine their amorphization behavior under light water reactor (LWR) conditions. U3Si2 remains crystalline under irradiation at LWR temperatures. Oxidation of the material was observed at high irradiation doses.

  4. Scanning ion deep level transient spectroscopy: II. Ion irradiated Au-Si Schottky junctions

    International Nuclear Information System (INIS)

    Laird, J S; Jagadish, C; Jamieson, D N; Legge, G J F

    2006-01-01

    Here we introduce a new technique called scanning ion deep level transient spectroscopy (SIDLTS) for the spatial analysis of electrically active defects in devices. In the first part of this paper, a simple theory behind SIDLTS was introduced and factors determining its sensitivity and resolution were discussed. In this paper, we demonstrate the technique on MeV boron implantation induced defects in an Au-Si Schottky junction. SIDLTS measurements are compared with capacitance DLTS measurements over the temperature range, 100-300 K. SIDLTS analyses indicate the presence of two levels, one of which was positively identified as the E c - 0.23 eV divacancy level. The high sensitivity of SIDLTS is verified and the advantages and limitations of the technique are discussed in light of non-exponential components in the charge transient response. Reasons for several undetected levels are also discussed

  5. STIM with energy loss contrast: An imaging modality unique to MeV ions

    International Nuclear Information System (INIS)

    Lefevre, H.W.; Schofield, R.M.S.; Bench, G.S.; Legge, G.J.F.

    1991-01-01

    Scanning transmission ion microscopy (STIM) through measurement of energy loss of individual ions is a quantitative imaging technique with several unique capabilities. The uniqueness derives conjointly from the large penetration with small scattering of MeV ions in low-Z specimens, from the simple relationship between energy loss and projected or areal density, and from the almost 100% efficiency with which one obtains pixel data from individual ions. Since contrast is in energy loss and not in numbers of events, the statistics of energy loss straggling affects the image but the statistics of counting does not. Small scattering makes it possible to observe details within transparent specimens. High efficiency makes it possible to collect large data sets for computed tomography, stereo, or high-definition imaging with a small radiation dose. High efficiency allows one to minimize aberrations by use of small apertures, to achieve good precision in the determination of areal density, or even to image live biological specimens in air since only one or a few ions per pixel are required. This paper includes a bibliography on STIM with MeV ions, it discusses the accuracy that one can achieve in the areal density coloring of a pixel with data from one or a few ions, and it supplements that review with recent examples from the Melbourne and the Eugene microprobes. (orig.)

  6. Linear dose dependence of ion beam mixing of metals on Si

    International Nuclear Information System (INIS)

    Poker, D.B.; Appleton, B.R.

    1985-01-01

    These experiments were conducted to determine the dose dependences of ion beam mixing of various metal-silicon couples. V/Si and Cr/Si were included because these couples were previously suspected of exhibiting a linear dose dependence. Pd/Si was chosen because it had been reported as exhibiting only the square root dependence. Samples were cut from wafers of (100) n-type Si. The samples were cleaned in organic solvents, etched in hydrofluoric acid, and rinsed with methanol before mounting in an oil-free vacuum system for thin-film deposition. Films of Au, V, Cr, or Pd were evaporated onto the Si samples with a nominal deposition rate of 10 A/s. The thicknesses were large compared with those usually used to measure ion beam mixing and were used to ensure that conditions of unlimited supply were met. Samples were mixed with Si ions ranging in energy from 300 to 375 keV, chosen to produce ion ranges that significantly exceeded the metal film depth. Si was used as the mixing ion to prevent impurity doping of the Si substrate and to exclude a background signal from the Rutherford backscattering (RBS) spectra. Samples were mixed at room temperature, with the exception of the Au/Si samples, which were mixed at liquid nitrogen temperature. The samples were alternately mixed and analyzed in situ without exposure to atmosphere between mixing doses. The compositional distributions after mixing were measured using RBS of 2.5-MeV 4 He atoms

  7. 1.2 MeV/amu Xe ion induced damage recovery in SiC

    Energy Technology Data Exchange (ETDEWEB)

    O’Connell, J.H., E-mail: jacques.oconnell@gmail.com [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Skuratov, V.A.; Sohatsky, A.S. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Neethling, J.H. [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2014-05-01

    The microstructural changes of 4H-SiC samples dual irradiated with either low energy He (10 keV) or Ti (220 keV) and high energy (167 MeV) Xe ions has been studied using cross-sectional transmission electron microscopy. It was found that xenon ions with fluences above 10{sup 13} cm{sup −2} restore crystallinity in a heavily damaged partially amorphous zone. No significant damage recovery was observed in fully amorphized layers of silicon carbide apart from a 5% reduction in the amorphous layer thickness.

  8. 1.2 MeV/amu Xe ion induced damage recovery in SiC

    International Nuclear Information System (INIS)

    O’Connell, J.H.; Skuratov, V.A.; Sohatsky, A.S.; Neethling, J.H.

    2014-01-01

    The microstructural changes of 4H-SiC samples dual irradiated with either low energy He (10 keV) or Ti (220 keV) and high energy (167 MeV) Xe ions has been studied using cross-sectional transmission electron microscopy. It was found that xenon ions with fluences above 10 13 cm −2 restore crystallinity in a heavily damaged partially amorphous zone. No significant damage recovery was observed in fully amorphized layers of silicon carbide apart from a 5% reduction in the amorphous layer thickness

  9. Ion shaking in the 200 MeV XLS-ring

    International Nuclear Information System (INIS)

    Bozoki, E.; Kramer, S.L.

    1992-01-01

    It has been shown that ions, trapped inside the beam's potential, can be removed by the clearing electrodes when the amplitude of the ion oscillation is increased by vertically shaking the ions. We will report on a similar experiment in the 200 Mev XLS ring. The design of the ion clearing system for the ring and the first results obtained, were already reported. In the present series of experiments, RF voltage was applied on a pair of vertical strip-lines. The frequency was scanned in the range of the ion (from H 2 to CO 2 ) bounce frequencies in the ring (1--10 MHz). The response of the beam size, vertical betatron tune and lifetime was studied

  10. Accelerator based synthesis of hydroxyapatite by MeV ion implantation

    International Nuclear Information System (INIS)

    Rautray, Tapash R.; Narayanan, R.; Kwon, Tae-Yub; Kim, Kyo-Han

    2010-01-01

    Accelerator based MeV ion implantation of Ca 2+ and P 2+ into the titanium substrate to form hydroxyapatite (HA) has been carried out. Calcium hydroxide was formed after heating the calcium implanted titanium in air at 80 o C for 3 h. Upon subsequent annealing for 5 min at 600 o C HA was formed on the surface. Penetration depth of the HA layer in this method is much higher as compared to keV ion implantation. By elemental analysis, Ca/P ratio of the HA was found to be 1.76 which is higher than the ideal 1.67. This higher Ca/P ratio is attributed to the higher penetration depth of the MeV technique used.

  11. Evaluation of neutron and proton nuclear data of {sup 28}Si for energies up to 200 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Weili [Kyushu Univ., Department of Applied Quantum Physics and Nuclear Engineering, Fukuoka (Japan); Watanabe, Y. [Kyushu Univ., Department of Advanced Energy Engineering Science, Fukuoka (Japan); Sukhovitskii, E. Sh. [Radiation Physics and Chemistry Problems Institute, Minsk-Sosny (Belarus); Iwamoto, O.; Chiba, S. [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    2001-03-01

    The neutron and proton nuclear data of {sup 28}Si up to 200 MeV are evaluated for various nuclear engineering applications. The soft rotator model and the coupled-channel method are used to perform a consistent analysis of the collective band structure of {sup 28}Si and nucleon scattering from {sup 28}Si. The GNASH nuclear model code is used for compound and preequilibrium particle emission calculations, where the emission of {sup 3}He is also included. Comparisons show overall good agreement with various experimental data. (author)

  12. Evaluation of neutron and proton nuclear data of 28Si for energies up to 200 MeV

    International Nuclear Information System (INIS)

    Sun, Weili; Watanabe, Y.; Sukhovitskii, E. Sh.; Iwamoto, O.; Chiba, S.

    2001-01-01

    The neutron and proton nuclear data of 28 Si up to 200 MeV are evaluated for various nuclear engineering applications. The soft rotator model and the coupled-channel method are used to perform a consistent analysis of the collective band structure of 28 Si and nucleon scattering from 28 Si. The GNASH nuclear model code is used for compound and preequilibrium particle emission calculations, where the emission of 3 He is also included. Comparisons show overall good agreement with various experimental data. (author)

  13. Effects produced in GaAs by MeV ion bombardment

    International Nuclear Information System (INIS)

    Wie, C.R.

    1985-01-01

    The first part of this thesis presents work performed on the ionizing energy beam induced adhesion enhancement of thin (approx.500 A) Au films on GaAs substrates. The ionizing beam, employed in the present thesis, is the MeV ions (i.e., 16 O, 19 F, and 35 Cl), with energies between 1 and 20 MeV. Using the Scratch test for adhesion measurement, and ESCA for chemical analysis of the film substrate interface, the native oxide layer at the interface is shown to play an important role in the adhesion enhancement by the ionizing radiation. A model is discussed that explains the experimental data on the dependence of adhesion enhancement on the energy which was deposited into electronic processes at the interface. The second part of the thesis presents research results on the radiation damage in GaAs crystals produced by MeV ions. Lattice parameter dilatation in the surface layers of the GaAs crystals becomes saturated after a high dose bombardment at room temperature. The strain produced by nuclear collisions is shown to relax partially due to electronic excitation (with a functional dependence on the nuclear and electronic stopping power of bombarding ions. Data on the GaAs and GaP crystals suggest that low temperature recovery stage defects produce major crystal distortion

  14. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    NARCIS (Netherlands)

    Dobrovolskiy, S.; Yakshin, Andrey; Tichelaar, F.D.; Verhoeven, J.; Louis, Eric; Bijkerk, Frederik

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10–20 nm were produced by sequential deposition of Si and implantation of 1 keV View the MathML source ions. Only about 3% of the implanted carbon was transferred into the SiC, with a thin, 0.5–1 nm, buried SiC layer being

  15. Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Vittone, E., E-mail: ettore.vittone@unito.it [Department of Physics, NIS Research Centre and CNISM, University of Torino, via P. Giuria 1, 10125 Torino (Italy); Pastuovic, Z. [Centre for Accelerator Science (ANSTO), Locked bag 2001, Kirrawee DC, NSW 2234 (Australia); Breese, M.B.H. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Garcia Lopez, J. [Centro Nacional de Aceleradores (CNA), Sevilla University, J. Andalucia, CSIC, Av. Thomas A. Edison 7, 41092 Sevilla (Spain); Jaksic, M. [Department for Experimental Physics, Ruder Boškovic Institute (RBI), P.O. Box 180, 10002 Zagreb (Croatia); Raisanen, J. [Department of Physics, University of Helsinki, Helsinki 00014 (Finland); Siegele, R. [Centre for Accelerator Science (ANSTO), Locked bag 2001, Kirrawee DC, NSW 2234 (Australia); Simon, A. [International Atomic Energy Agency (IAEA), Vienna International Centre, P.O. Box 100, 1400 Vienna (Austria); Institute of Nuclear Research of the Hungarian Academy of Sciences (ATOMKI), Debrecen (Hungary); Vizkelethy, G. [Sandia National Laboratories (SNL), PO Box 5800, Albuquerque, NM (United States)

    2016-04-01

    Highlights: • We study the electronic degradation of semiconductors induced by ion irradiation. • The experimental protocol is based on MeV ion microbeam irradiation. • The radiation induced damage is measured by IBIC. • The general model fits the experimental data in the low level damage regime. • Key parameters relevant to the intrinsic radiation hardness are extracted. - Abstract: This paper investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general one-dimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and the charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be considered indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials.

  16. Damage profiles and ion distribution in Pt-irradiated SiC

    Energy Technology Data Exchange (ETDEWEB)

    Xue, H.Z. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Zhang, Y., E-mail: Zhangy1@ornl.gov [Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Zhu, Z. [Pacific Northwest National Laboratory, P.O. Box 999, Richland, WA 99352 (United States); Zhang, W.M. [Department of Radiation Therapy, Peking University First Hospital, Beijing 100034 (China); Bae, I.-T. [Small Scale Systems Integration and Packaging Center, State University of New York at Binghamton, P.O. Box 6000, Binghamton, NY 13902 (United States); Weber, W.J. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

    2012-09-01

    Single crystalline 6H-SiC samples were irradiated at 150 K with 2 MeV Pt ions. The local volume swelling was determined by electron energy loss spectroscopy (EELS), and a nearly sigmoidal dependence on irradiation dose is observed. The disorder profiles and ion distribution were determined by Rutherford backscattering spectrometry (RBS), transmission electron microscopy, and secondary ion mass spectrometry. Since the volume swelling reaches 12% over the damage region at high ion fluence, the effect of lattice expansion is considered and corrected for in the analysis of RBS spectra to obtain depth profiles. Projectile and damage profiles are estimated by SRIM (Stopping and Range of Ions in Matter). When compared with the measured profiles, the SRIM code predictions of ion distribution and the damage profiles are underestimated due to significant overestimation of the electronic stopping power for the slow heavy Pt ions. By utilizing the reciprocity method, which is based on the invariance of the inelastic energy loss in ion-solid collisions against interchange of projectile and target atom, a much lower electronic stopping power is deduced. A simple approach, based on reducing the density of SiC target in SRIM simulation, is proposed to compensate the overestimated SRIM electronic stopping power values, which results in improved agreement between predicted and measured damage profiles and ion ranges.

  17. Electrochemical characteristics of nc-Si/SiC composite for anode electrode of lithium ion batteries

    International Nuclear Information System (INIS)

    Jeon, Bup Ju; Lee, Joong Kee

    2014-01-01

    Graphical abstract: Cycling performances and coulombic efficiencies of the nc-Si/SiC composite anodes at different CH 4 /SiH 4 mole ratios. -- Highlights: • Our work has focused on irreversible discharge capacity and capacity retention of nc-Si/SiC composite particles. • Particles comprised a mixed construction of nc-Si/SiC structure with dual phases. • The SiC phase acted as retarding media, leading to enhanced cycle stability. -- Abstract: nc-Si/SiC composite particles were prepared as an anode material for lithium ion batteries using a plasma jet with DC arc discharge. The composition of the nc-Si/SiC composite particles was controlled by setting the mole ratio of CH 4 and SiH 4 precursor gases. X-ray diffraction, TEM images, and Raman shift analyses revealed that the synthesized nc-Si/SiC composite particles comprised a construction of nano-nocaled structure with crystalline phases of active silicon, highly disordered amorphous carbon of graphite and crystalline phases of β-SiC. In the experimental range examined, the nc-Si/SiC composite particles showed good coulombic efficiency in comparison with particles high Si–Si bonding content due to the interplay of particles with a small proportion of carbon and the buffering effect against volume expansion by structural stabilization, and played a role as retarding media for the rapid electrochemical reactions of the SiC crystal against lithium

  18. Electrochemical characteristics of nc-Si/SiC composite for anode electrode of lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Bup Ju [Department of Energy Resources, Shinhan University, 233-1, Sangpae-dong, Dongducheon, Gyeonggi-do, 483-777 (Korea, Republic of); Lee, Joong Kee, E-mail: leejk@kist.re.kr [Advanced Energy Materials Processing Laboratory, Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of)

    2014-03-25

    Graphical abstract: Cycling performances and coulombic efficiencies of the nc-Si/SiC composite anodes at different CH{sub 4}/SiH{sub 4} mole ratios. -- Highlights: • Our work has focused on irreversible discharge capacity and capacity retention of nc-Si/SiC composite particles. • Particles comprised a mixed construction of nc-Si/SiC structure with dual phases. • The SiC phase acted as retarding media, leading to enhanced cycle stability. -- Abstract: nc-Si/SiC composite particles were prepared as an anode material for lithium ion batteries using a plasma jet with DC arc discharge. The composition of the nc-Si/SiC composite particles was controlled by setting the mole ratio of CH{sub 4} and SiH{sub 4} precursor gases. X-ray diffraction, TEM images, and Raman shift analyses revealed that the synthesized nc-Si/SiC composite particles comprised a construction of nano-nocaled structure with crystalline phases of active silicon, highly disordered amorphous carbon of graphite and crystalline phases of β-SiC. In the experimental range examined, the nc-Si/SiC composite particles showed good coulombic efficiency in comparison with particles high Si–Si bonding content due to the interplay of particles with a small proportion of carbon and the buffering effect against volume expansion by structural stabilization, and played a role as retarding media for the rapid electrochemical reactions of the SiC crystal against lithium.

  19. 130 MeV Au ion irradiation induced dewetting on In2Te3 thin film

    International Nuclear Information System (INIS)

    Matheswaran, P.; Abhirami, K.M.; Gokul, B.; Sathyamoorthy, R.; Prakash, Jai; Asokan, K.; Kanjilal, D.

    2012-01-01

    Highlights: ► In 2 Te 3 phase formed from In/Te bilayer by 130 MeV Au ion irradiation. ► Lower fluence results mixed phases with initial state of dewetting. ► At higher fluence, In 2 Te 3 phase with complete dewetting pattern is formed. ► Thermal spike model is used to explain the inter face mixing phenomena. ► SHI irradiation may be used to functionalize the structural and surface properties of thin films. - Abstract: In/Te bilayer thin films were prepared by sequential thermal evaporation and subsequently irradiated by 130 MeV Au ions. The pristine and irradiated samples were characterized by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) techniques. RBS spectra reveal the sputtering of Te film and interface mixing, with increasing fluence. The surface morphology showed the beginning of dewetting of Te thin film and formation of the partially connected with the mixed zones at the fluence of 1 × 10 13 ions/cm 2 . At the higher fluence of 3 × 10 13 ions/cm 2 , dewetted structures were isolated at the surface. Above results are explained based on the formation of craters, sputtering and dewetting followed by inter-diffusion at the interface of molten zones due to thermal spike induced by Au ions.

  20. GXRD study of 100 MeV Fe9+ ion irradiated indium phosphide

    International Nuclear Information System (INIS)

    Dubey, R.L.; Dubey, S.K.; Kachhap, N.K.; Kanjilal, D.

    2014-01-01

    Swift heavy ions with MeV to GeV kinetic energy offer unique possibilities of modifying material properties. Each projectile passing through the target material causes loss of its energy by ion-electrons and ion-atoms interaction with the target material. The consequence of formal one is to change in surface properties and latter to produces damage deep in the target material near the projected range of projectile. In the present work, indium phosphide samples were irradiated at 100 MeV 56 Fe 9+ ions with different fluences varying from 1x10 12 to 1x10 14 ions cm -2 using the 15UD Pelletron facilities at Inter University Accelerator Centre (IUAC), New Delhi. Grazing angle X-ray diffraction technique was used to investigate the structural properties of irradiated indium phosphide at different depths. The GXRD spectra of non-irradiated and irradiated samples were recorded at different grazing angle i.e 1°, 2°, 3°, 4° and 5° to get the structural information over the projected range. The detailed result will be presented and discussed in the conference. (author)

  1. RBS studies of the lattice damage caused by 1 MeV Si+ implantation into Al0.3Ga0.7As/GaAs superlattices at elevated temperature

    International Nuclear Information System (INIS)

    Xu Tianbing; Zhu Peiran; Zhou Junsi; Li Daiqing; Gong Baoan; Wan Ya; Mu Shanming; Zhao Qingtai; Wang Zhonglie

    1994-01-01

    The lattice damage accumulation in GaAs and Al 0.3 Ga 0.7 As/GaAs superlattices by 1 MeV Si + irradiation at room temperature and 350 C has been studied. For irradiations at 350 C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 x 10 15 Si/cm 2 for GaAs, and is 5 x 10 15 Si/cm 2 for Al 0.8 Ga 0.7 As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350 C. The damage accumulation rate for 1 MeV Si ion implantation in Al 0.3 Ga 0.7 As/GaAs superlattice is less than that in GaAs. (orig.)

  2. On formation of silicon nanocrystals under annealing SiO2 layers implanted with Si ions

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Yanovskaya, S.G.; Volodin, V.A.; Kesler, V.G.; Lejer, A.F.; Ruault, M.-O.

    2002-01-01

    Raman scattering, X-ray photoelectron spectroscopy, and photoluminescence have been used to study the formation of silicon nanocrystals in SiO 2 implanted with Si ions. Si clusters have been formed at once in the postimplanted layers, providing the excessive Si concentration more ∼ 3 at. %. Si segregation with Si-Si 4 bonds formation is enhanced as following annealing temperature increase, however, the Raman scattering by Si clusters diminishes. The effect is explained by a transformation of the chain-like Si clusters into compact phase nondimensional structures. Segregation of Si nanoprecipitates had ended about 1000 deg C, but the strong photoluminescence typical for Si nanocrystals manifested itself only after 1100 deg C [ru

  3. Irradiation effects of 6 MeV electron on electrical properties of Al/Al2O3/n-Si MOS capacitors

    International Nuclear Information System (INIS)

    Laha, P.; Banerjee, I.; Bajaj, A.; Chakraborty, P.; Barhai, P.K.; Dahiwale, S.S.; Das, A.K.; Bhoraskar, V.N.; Kim, D.; Mahapatra, S.K.

    2012-01-01

    The influence of 6 MeV electron irradiation on the electrical properties of Al/Al 2 O 3 /n-Si metal–oxide–semiconductor (MOS) capacitors has been investigated. Using rf magnetron sputtering deposition technique, Al/Al 2 O 3 /n-Si MOS capacitors were fabricated and such twelve capacitors were divided into four groups. The first group of MOS capacitors was not irradiated with 6 MeV electrons and treated as virgin. The second group, third group and fourth group of MOS capacitors were irradiated with 6 MeV electrons at 10 kGy, 20 kGy, and 30 kGy doses, respectively, keeping the dose rate ∼1 kGy/min. The variations in crystallinity of the virgin and irradiated MOS capacitors have been compared from GIXRD (Grazing Incidence X-ray Diffraction) spectra. Thickness and in-depth elemental distributions of individual layers were performed using Secondary Ion Mass Spectrometry (SIMS). The device parameters like flat band voltage (V FB ) and interface trap density (D it ) of virgin and irradiated MOS capacitors have been calculated from C vs V and G/ω vs V curve, respectively. The electrical properties of the capacitors were investigated from the tan δ vs V graph. The device parameters were estimated using C–V and G/ω–V measurements. Poole–Frenkel coefficient (β PF ) of the MOS capacitors was determined from leakage current (I)–voltage (V) measurement. The leakage current mechanism was proposed from the β PF value. - Highlights: ► The electron irradiation effects make variation in the device parameters. ► The device parameters changes due to percentage of defects and charge trapping. ► Leakage current of Al/Al 2 O 3 /n-Si changes due to interface dangling bonds. ► The leakage current mechanism of MOS structures is due to Poole-Frenkel effect.

  4. MeV ion irradiation induced evolution of morphological, structural and optical properties of nanostructured SnO2 thin films

    International Nuclear Information System (INIS)

    Mohapatra, Satyabrata; Bhardwaj, Neha; Pandey, Akhilesh

    2015-01-01

    Nanostructured SnO 2 thin films were prepared by carbothermal evaporation method. Morphological, structural and optical properties of the SnO 2 thin films, before and after 8 MeV Si ion irradiation to fluences varying from 1 × 10 13 to 1 × 10 15 ions cm −2 , were well characterized using atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), x-ray diffraction (XRD), Raman spectroscopy and photoluminescence spectroscopy (PL). XRD studies revealed the presence of SnO 2 and Sn nanoparticles in the as-deposited samples. AFM and FESEM studies on the irradiated samples revealed formation of nanoring-like structures, at a fluence of 1 × 10 15 ions cm −2 , with a central hole and circular rim consisting of nearly monodisperse SnO 2 nanoparticles. PL studies revealed strong enhancement in UV emissions upon 8 MeV Si ion irradiation. A growth mechanism underlying the formation of SnO 2 nanorings involving self-assembly of SnO 2 nanoparticles around nanoholes is tentatively proposed. (paper)

  5. The emittance and brightness characteristics of negative ion sources suitable for MeV ion implantation

    International Nuclear Information System (INIS)

    Alton, G.D.

    1987-01-01

    This paper provides the description and beam properties of ion sources suitable for use with ion implantation devices. Particular emphasis is placed on the emittance and brightness properties of state-of-the-art, high intensity, negative ion sources based on the cesium ion sputter principle

  6. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    NARCIS (Netherlands)

    Dobrovolskiy, S.; Yakshin, A. E.; Tichelaar, F. D.; Verhoeven, J.; E. Louis,; F. Bijkerk,

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10-20 nm were produced by sequential deposition of Si and implantation of 1 key CHx+ ions. Only about 3% of the implanted carbon was transferred into the SIC, with a thin, 0.5-1 nm, buried SIC layer being formed. We

  7. Imaging of single cells and tissue using MeV ions

    International Nuclear Information System (INIS)

    Watt, F.; Bettiol, A.A.; Kan, J.A. van; Ynsa, M.D.; Ren Minqin; Rajendran, R.; Cui Huifang; Sheu, F.-S.; Jenner, A.M.

    2009-01-01

    With the attainment of sub-100 nm high energy (MeV) ion beams, comes the opportunity to image cells and tissue at nano-dimensions. The advantage of MeV ion imaging is that the ions will penetrate whole cells, or relatively thick tissue sections, without any significant loss of resolution. In this paper, we demonstrate that whole cells (cultured N2A neuroblastoma cells ATCC) and tissue sections (rabbit pancreas tissue) can be imaged at sub-100 nm resolutions using scanning transmission ion microscopy (STIM), and that sub-cellular structural details can be identified. In addition to STIM imaging we have also demonstrated for the first time, that sub-cellular proton induced fluorescence imaging (on cultured N2A neuroblastoma cells ATCC) can also be carried out at resolutions of 200 nm, compared with 300-400 nm resolutions achieved by conventional optical fluorescence imaging. The combination of both techniques offers a potentially powerful tool in the quest for elucidating cell function, particularly when it should be possible in the near future to image down to sub-50 nm.

  8. MeV ion beam interaction with polymer films containing cross-linking agents

    International Nuclear Information System (INIS)

    Evelyn, A. L.

    1999-01-01

    Polymer films containing cross linking enhancers were irradiated with MeV alpha particles to determine the effects of MeV ion beam interaction on these materials. The contributed effects from the electronic and nuclear stopping powers were separated by irradiating stacked thin films of polyvinyl chloride (PVC), polystyrene (PS) and polyethersulfone (PES). This layered system allowed most of the effects of the electronic energy deposited to be experienced by the first layers and the last layers to receive most of the effects of the nuclear stopping power. RGA, Raman microprobe analysis, RBS and FTIR measured changes in the chemical structures of the irradiated films. The characterization resolved the effects of the stopping powers on the PVC, PS and PES and the results were compared with those from previously studied polymers that did not contain any cross linking agents

  9. High-energy ion-beam-induced phase separation in SiOx films

    International Nuclear Information System (INIS)

    Arnoldbik, W.M.; Tomozeiu, N.; Hattum, E.D. van; Lof, R.W.; Vredenberg, A.M.; Habraken, F.H.P.M.

    2005-01-01

    The modification of the nanostructure of silicon suboxide (SiO x ) films as a result of high-energy heavy-ion irradiation has been studied for the entire range 0.1≤x x films have been obtained by radio-frequency magnetron sputter deposition. For 50 MeV 63 Cu 8+ ions and an angle of incidence of 20 deg. with the plane of the surface, and for x≥0.5, it takes a fluence of about 10 14 /cm 2 to reach a Si-O-Si infrared absorption spectrum, which is supposed to be characteristic for a Si-SiO 2 composite film structure. For smaller x values, it takes a much larger fluence. The interpretation of the IR spectra is corroborated for the surface region by results from x-ray photoelectron spectroscopy. The results present evidence for a mechanism, in which the phase separation takes place in the thermal spike, initiated by the energy deposited in many overlapping independent ion tracks. Such a process is possible since the suboxides fulfill the conditions for spinodal decomposition

  10. Energy loss of carbon transmitted 1-MeV H2+ ions

    International Nuclear Information System (INIS)

    Fritz, M.; Kimura, K.; Susuki, Y.; Mannami, M.

    1994-01-01

    Energy losses of 1-MeV H 2 + ions passing through carbon foils of 2-8 μg/cm 2 thickness have been measured and show besides the linear increase with target thickness a 0.4 keV offset. The stopping power derived from the observed energy losses is 1.15 times as large as the sum of the stopping powers for two single H + of the same velocity. Calculations of the stopping powers for H 2 + ions and diprotons, using first Born approximation, indicate that the H 2 + ions lose the binding electron upon entrance into the foil, traverse the target as diprotons and recapture target electrons at the exit surface, a scenario also supported by the 0.4 keV offset at zero thickness. (author)

  11. New source of MeV negative ion and neutral atom beams

    Energy Technology Data Exchange (ETDEWEB)

    Ter-Avetisyan, S., E-mail: sargis@gist.ac.kr [Center for Relativistic Laser Science, Institute for Basic Science (IBS), Gwangju 500-712 (Korea, Republic of); Department of Physics and Photon Science, GIST, Gwangju 500-712 (Korea, Republic of); Braenzel, J.; Schnürer, M. [Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, Berlin 12489 (Germany); Prasad, R. [Institute for Laser and Plasma Physics, Heinrich Heine University, Duesseldorf 40225 (Germany); Borghesi, M. [School of Mathematics and Physics, The Queen’s University of Belfast, Belfast BT7-1NN (United Kingdom); Jequier, S.; Tikhonchuk, V. [Centre Lasers Intenses et Applications, CEA, CNRS, University of Bordeaux, 33405 Talence (France)

    2016-02-15

    The scenario of “electron-capture and -loss” was recently proposed for the formation of negative ion and neutral atom beams with MeV kinetic energies. However, it does not explain why the formation of negative ions in a liquid spray is much more efficient than with an isolated atom. The role of atomic excited states in the charge-exchange processes is considered, and it is shown that it cannot account for the observed phenomena. The processes are more complex than the single electron-capture and -loss approach. It is suggested that the shell effects in the electronic structure of the projectile ion and/or target atoms may influence the capture/loss probabilities.

  12. New source of MeV negative ion and neutral atom beams

    International Nuclear Information System (INIS)

    Ter-Avetisyan, S.; Braenzel, J.; Schnürer, M.; Prasad, R.; Borghesi, M.; Jequier, S.; Tikhonchuk, V.

    2016-01-01

    The scenario of “electron-capture and -loss” was recently proposed for the formation of negative ion and neutral atom beams with MeV kinetic energies. However, it does not explain why the formation of negative ions in a liquid spray is much more efficient than with an isolated atom. The role of atomic excited states in the charge-exchange processes is considered, and it is shown that it cannot account for the observed phenomena. The processes are more complex than the single electron-capture and -loss approach. It is suggested that the shell effects in the electronic structure of the projectile ion and/or target atoms may influence the capture/loss probabilities

  13. Structural modification by swift heavy ion at metal/Si interface

    Energy Technology Data Exchange (ETDEWEB)

    Sisodia, Veenu; Jain, R.K.; Bhattacharaya, D.; Kabiraj, D.; Jain, I.P. E-mail: ipjain46@sify.com

    2003-06-01

    Transition metal silicides produced by swift heavy ion (SHI) irradiation have found applications in ultra-large-scale integrated circuits due to their small contact resistivities and higher thermal and chemical stabilities. In the present work, the mixing in Ni/Si and Ti/Si systems was studied under irradiation with Au ions. A layer of Ni (15 nm) and Ti (18 nm) was deposited by e-gun evaporation on Si (1 0 0) substrate at 10{sup -8} Torr vacuum. The samples were irradiated with 95 Mev Au ions at room temperature to a fluence of 10{sup 13} ions/cm{sup 2} and 1 pna beam current. Rutherford backscattering spectroscopy and X-Ray reflectivity have been employed to characterize the samples. The large electronic excitation due to SHI irradiation produces defects in the system. It is expected that SHI irradiation followed by thermal annealing in Ni/Si system will provide the required energy to the atoms to diffuse across the interface resulting in mixing.

  14. Study of elastic pion scattering from 9Be, 28Si, 58Ni, and 208Pb at 162 MeV

    International Nuclear Information System (INIS)

    Devereux, M.J.

    1979-05-01

    Elastic pion scattering from 9 Be, 28 Si, 58 Ni, and 208 Pb at 162 MeV is analyzed and compared with an optical model theory which incorporates a pion--nucleon range. Excellent fits to the data are obtained in all but one case. The fitted values of the pion--nucleon range, as well as other fitted values are listed. 108 references

  15. Variation of carrier concentration and interface trap density in 8MeV electron irradiated c-Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bhat, Sathyanarayana, E-mail: asharao76@gmail.com; Rao, Asha, E-mail: asharao76@gmail.com [Department of Physics, Mangalore Institute of Technology and Engineering, Moodabidri, Mangalore-574225 (India); Krishnan, Sheeja [Department of Physics, Sri Devi Institute of Technology, Kenjar, Mangalore-574142 (India); Sanjeev, Ganesh [Microtron Centre, Department of Physics, Mangalore University, Mangalagangothri-574199 (India); Suresh, E. P. [Solar Panel Division, ISRO Satellite Centre, Bangalore-560017 (India)

    2014-04-24

    The capacitance and conductance measurements were carried out for c-Si solar cells, irradiated with 8 MeV electrons with doses ranging from 5kGy – 100kGy in order to investigate the anomalous degradation of the cells in the radiation harsh environments. Capacitance – Voltage measurements indicate that there is a slight reduction in the carrier concentration upon electron irradiation due to the creation of radiation induced defects. The conductance measurement results reveal that the interface state densities and the trap time constant increases with electron dose due to displacement damages in c-Si solar cells.

  16. Heavy ion recoil spectrometry of Si{sub x}Ge{sub 1-x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Walker, S R; Johnston, P N; Bubb, I F [Royal Melbourne Inst. of Tech., VIC (Australia); Cohen, D D; Dytlewski, N [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Hult, M; Whitlow, H J [Lund Institute of Technology, Solvegatan (Sweden). Department of Nuclear Physics; Zaring, C; Oestling, M [Royal Inst. of Tech., Stockholm (Sweden). Dept. of Solid State Electronics

    1994-12-31

    Mass and energy dispersive recoil spectrometry employing 77 MeV {sup 127}I ions from ANTARES (FN Tandem) facility at Lucas Heights has been used to examine the isotopic composition of samples of Si{sub x}Ge{sub 1-x} grown at the Australian National University by Electron Beam Evaporation (EBE). The recoiling target nuclei were analysed by a Time Of Flight and Energy (TOF-E) detector telescope composed of two timing pickoff detectors and a surface barrier (energy) detector. From the time of flight and energy, the ion mass can be determined and individual depth distributions for each element can be obtained. Recoil spectrometry has shown the presence of oxygen in the Si{sub x}Ge{sub 1-x} layer and has enabled the separate determination of energy spectra for individual elements. 9 refs., 3 figs.

  17. Heavy ion recoil spectrometry of Si{sub x}Ge{sub 1-x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Walker, S.R.; Johnston, P.N.; Bubb, I.F. [Royal Melbourne Inst. of Tech., VIC (Australia); Cohen, D.D.; Dytlewski, N. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Hult, M.; Whitlow, H.J. [Lund Institute of Technology, Solvegatan (Sweden). Department of Nuclear Physics; Zaring, C.; Oestling, M. [Royal Inst. of Tech., Stockholm (Sweden). Dept. of Solid State Electronics

    1993-12-31

    Mass and energy dispersive recoil spectrometry employing 77 MeV {sup 127}I ions from ANTARES (FN Tandem) facility at Lucas Heights has been used to examine the isotopic composition of samples of Si{sub x}Ge{sub 1-x} grown at the Australian National University by Electron Beam Evaporation (EBE). The recoiling target nuclei were analysed by a Time Of Flight and Energy (TOF-E) detector telescope composed of two timing pickoff detectors and a surface barrier (energy) detector. From the time of flight and energy, the ion mass can be determined and individual depth distributions for each element can be obtained. Recoil spectrometry has shown the presence of oxygen in the Si{sub x}Ge{sub 1-x} layer and has enabled the separate determination of energy spectra for individual elements. 9 refs., 3 figs.

  18. Study of the thermal oxidation of titanium and zirconium under argon ion irradiation in the low MeV range (E = 15 MeV)

    International Nuclear Information System (INIS)

    Do, N.-L.

    2012-01-01

    We have shown that argon ion irradiation between 1 and 15 MeV produces damage on both titanium and zirconium surfaces, taking the form of accelerated oxidation and/or craterization effects, varying as a function of the projectile energy and the annealing atmosphere (temperature and pressure) simulating the environmental conditions of the fuel/cladding interface of PWR fuel rods. Using AFM, we have shown that the titanium and zirconium surface is attacked under light argon ion bombardment at high temperature (up to 500 C) in weakly oxidizing medium (under rarefied dry air pressure ranging from 5,7 10 -5 Pa to 5 10 -3 Pa) for a fixed fluence of about 5 10 14 ions.cm -2 . We observed the formation of nano-metric craters over the whole titanium surface irradiated between 2 and 9 MeV and the whole zirconium surface irradiated at 4 MeV, the characteristics of which vary depending on the temperature and the pressure. In the case of the Ar/Ti couple, the superficial damage efficiency increases when the projectile energy decreases from 9 to 2 MeV. Moreover, whereas the titanium surface seems to be transparent under the 15-MeV ion beam, the zirconium surface exhibits numerous micrometric craters surrounded by a wide halo. The crater characteristics (size and superficial density) differ significantly from that observed both in the low energy range (keV) where the energy losses are controlled by ballistic collisions (Sn) and in the high energy range (MeV - GeV) where the energy losses are controlled by electronic excitations (Se), which was not completely unexpected in this intermediate energy range for which combined Sn - Se stopping power effects are possibly foreseen. Using XPS associated to ionic sputtering, we have shown that there is an irradiation effect on thermal oxidation of titanium, enhanced under the argon ion beam between 2 and 9 MeV, and that there is also an energy effect on the oxide thickness and stoichiometry. The study conducted using Spectroscopic

  19. Determining the stereochemical structures of molecular ions by ''Coulomb-explosion'' techniques with fast (MeV) molecular ion beams

    International Nuclear Information System (INIS)

    Gemmell, D.S.

    1980-01-01

    Recent studies on the dissociation of fast (MeV) molecular ion beams in thin foils suggest a novel alternative approach to the determination of molecular ion structures. In this article we review some recent high-resolution studies on the interactions of fast molecular ion beams with solid and gaseous targets and indicate how such studies may be applied to the problem of determining molecular ion structures. The main features of the Coulomb explosion of fast-moving molecular ion projectiles and the manner in which Coulomb-explosion techniques may be applied to the problem (difficult to attack by more conventional means) of determining the stereochemical structures of molecular ions has been described in this paper. Examples have been given of early experiments designed to elicit structure information. The techniques are still in their infancy, and it is to be expected that as both the technology and the analysis are refined, the method will make valuable contributions to the determination of molecular ion structures

  20. Enhanced formation of Ge nanocrystals in Ge : SiO2 layers by swift heavy ions

    International Nuclear Information System (INIS)

    Antonova, I V; Volodin, V A; Marin, D M; Skuratov, V A; Smagulova, S A; Janse van Vuuren, A; Neethling, J; Jedrzejewski, J; Balberg, I

    2012-01-01

    In this paper we report the ability of swift heavy Xe ions with an energy of 480 MeV and a fluence of 10 12 cm -2 to enhance the formation of Ge nanocrystals within SiO 2 layers with variable Ge contents. These Ge-SiO 2 films were fabricated by the co-sputtering of Ge and quartz sources which followed various annealing procedures. In particular, we found that the irradiation of the Ge : SiO 2 films with subsequent annealing at 500 °C leads to the formation of a high concentration of nanocrystals (NCs) with a size of 2-5 nm, whereas without irradiation only amorphous inclusions were observed. This effect, as evidenced by Raman spectra, is enhanced by pre-irradiation at 550 °C and post-irradiation annealing at 600 °C, which also leads to the observation of room temperature visible photoluminescence. (paper)

  1. Anti-biofilm efficacy of 100 MeV gold ion irradiated polycarbonate against Salmonella typhi

    Science.gov (United States)

    Joshi, R. P.; Hareesh, K.; Bankar, A.; Sanjeev, G.; Asokan, K.; Kanjilal, D.; Dahiwale, S. S.; Bhoraskar, V. N.; Dhole, S. D.

    2017-12-01

    Polycarbonate (PC) films were irradiated by 100 MeV gold (Au7+) ions and characterized to study changes in its optical, chemical, surface morphology and thermal properties. UV-Visible spectroscopic results revealed the decrease in the optical band gap of PC after ion irradiation due to chain scission mainly at the carbonyl group which is corroborated by Fourier Transform Infrared spectroscopic results. X-ray diffractogram study showed decrease in crystallinity of PC film after irradiation. Scanning electron microscopic results showed the micropores formation in PC which results in surface roughening. Differential scanning calorimetric results revealed decrease in glass transition temperature indicating the decrease in molecular weight of PC corroborated by rheometric studies. PC films irradiated by 100 MeV Au7+ ions showed increased anti-biofilm activity against the human pathogen, Salmonella typhi (S. typhi). Morphology of S. typhi was changed due to stress of Au7+ irradiated PC. Cells length was increased with increasing fluences. The average cell length, cell volume and surface area was increased significantly (PBiofilm formation was inhibited ≈ 20% at lower fluence and 96% at higher fluence, which observed to be enhanced anti-biofilm activity in Au7+ irradiated PC.

  2. Applications of focused MeV light ion beams for high resolution channeling contrast imaging

    Energy Technology Data Exchange (ETDEWEB)

    Jamieson, D N; Breese, M B.H.; Prawer, S; Dooley, S P; Allen, M G; Bettiol, A A; Saint, A [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Ryan, C G [Commonwealth Scientific and Industrial Research Organisation (CSIRO), North Ryde, NSW (Australia). Div. of Exploration Geoscience

    1994-12-31

    The technique of Nuclear Microscopy, utilizing a focused ion probe of typically MeV H{sup +} or He{sup +} ions, can produce images where the contrast depends on typical Ion Beam Analysis (lBA) processes. The probe forming lens system usually utilizes strong focusing, precision magnetic quadrupole lenses and the probe is scanned over the target to produce images. Originally, this imaging technique was developed to utilize backscattered particles with incident beam currents typically of a few nA, and the technique became known as Channeling Contrast Microscopy (CCM). Recently, the technique has been developed further to utilize the forward scattering of ions incident along a major crystal axis in thin crystals. This technique is known as Channeling Scanning Transmission Ion Microscopy (CSTIM). Since nearly all incident ions are detected, CSTIM is highly efficient and very low beam currents are sufficient for imaging, typically as low as a few fA. This allows probes as small as 50 nm to be used. In this paper we briefly review the recent applications of these emerging techniques to a variety of single crystal materials (authors). 13 refs., 5 figs.

  3. Applications of focused MeV light ion beams for high resolution channeling contrast imaging

    Energy Technology Data Exchange (ETDEWEB)

    Jamieson, D.N.; Breese, M.B.H.; Prawer, S.; Dooley, S.P.; Allen, M.G.; Bettiol, A.A.; Saint, A. [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Ryan, C.G. [Commonwealth Scientific and Industrial Research Organisation (CSIRO), North Ryde, NSW (Australia). Div. of Exploration Geoscience

    1993-12-31

    The technique of Nuclear Microscopy, utilizing a focused ion probe of typically MeV H{sup +} or He{sup +} ions, can produce images where the contrast depends on typical Ion Beam Analysis (lBA) processes. The probe forming lens system usually utilizes strong focusing, precision magnetic quadrupole lenses and the probe is scanned over the target to produce images. Originally, this imaging technique was developed to utilize backscattered particles with incident beam currents typically of a few nA, and the technique became known as Channeling Contrast Microscopy (CCM). Recently, the technique has been developed further to utilize the forward scattering of ions incident along a major crystal axis in thin crystals. This technique is known as Channeling Scanning Transmission Ion Microscopy (CSTIM). Since nearly all incident ions are detected, CSTIM is highly efficient and very low beam currents are sufficient for imaging, typically as low as a few fA. This allows probes as small as 50 nm to be used. In this paper we briefly review the recent applications of these emerging techniques to a variety of single crystal materials (authors). 13 refs., 5 figs.

  4. The real potential continuous ambiguity for 90 MeV Li ions

    International Nuclear Information System (INIS)

    Cook, J.; Barnwell, J.M.; Clarke, N.M.; Griffiths, R.J.

    1980-01-01

    The features of discrete and continuous ambiguities in the real phenomenological optical potential are clarified. The continuous ambiguity in the real potential for the scattering of 90 MeV 6 Li and 7 Li ions from 27 Al is investigated. For 6 Li the ambiguity is of Igo (Phys. Rev. Lett.; 1: 72 (1958) and Phys. Rev.; 115: 1665 (1959)) type but for 7 Li it is of Vrsup(n) = constant type. The implications of this are that 7 Li is less strongly absorbed than 6 Li. (author)

  5. Backscattering/transmission of 2 MeV He{sup ++} ions quantitative correlation study

    Energy Technology Data Exchange (ETDEWEB)

    Berec, V., E-mail: bervesn@gmail.com [Institute of Nuclear Sciences Vinca, University of Belgrade, P.O. Box 522, 11001 Belgrade (Serbia); Germogli, G.; Mazzolari, A.; Guidi, V. [INFN Sezione di Ferrara and Dipartimento di Fisica e Scienze della Terra, Via Saragat 1, 44100 Ferrara (Italy); De Salvador, D. [Dipartimento di Fisica, Università di Padova, Via Marzolo n.8, 35131 Padova (Italy); INFN Laboratori Nazionali di Legnaro, Viale Università 2, 35020 Legnaro, PD (Italy); Bacci, L. [INFN Laboratori Nazionali di Legnaro, Viale Università 2, 35020 Legnaro, PD (Italy)

    2015-07-15

    In this work we report on detailed findings of planar channeling oscillations of 2 MeV He{sup ++} particles in (1 1 0) silicon crystal. The exact correlation and coherence mechanism between confined particles oscillating trajectories are analyzed theoretically and experimentally in backscattering/transmission geometry. Regular patterns of channeled He{sup ++} ion planar oscillations are shown to be dominated by the crystal harmonic-oscillator potential and multiple scattering effect. For the first time it was shown that under the planar channeling conditions trajectories of positively charged particles exhibit observable correlation dynamics, including the interference effect. Quantitative estimation of channeling efficiency is performed using path integral method.

  6. Analyzing heavy-ion-induced charge collection in Si devices by three-dimensional simulation

    International Nuclear Information System (INIS)

    Dodd, P.E.

    1994-01-01

    Properties of charge collection in Si devices in response to single-ion bombardment have been studied using transient three-dimensional drift-diffusion simulation. In unloaded Si diodes, the funnel effect is particularly strong in lightly-doped materials for high-density strikes such as 100 MeV Fe, and essentially all charge collection is by funnel-assisted drift. This drift collection may occur at time scales as late as several nanoseconds, much later than is traditionally associated with drift. For more heavily-doped materials or lower-density strikes, such as 5-MeV α-particles, drift and diffusion play more equal roles. In epitaxial structures the funnel is truncated by the heavily-doped substrate, collapses quickly, and a great deal of charge is collected at late times by diffusion. Charge collection in Si circuitry is influenced by the circuit external to the struck device. Loading effects on charge collection were studied using passive external circuit elements as well as by mixed-mode simulation, which allows modeling of active external circuitry. Simulations indicate that the funnel can be significantly affected by the inclusion of passive loads, while active loads may prevent any direct charge collection by funneling. Finally, the use of three-dimensional device simulators is presented as a method of analyzing results obtained from focused ion microbeam experiments

  7. Underling modification in ion beam induced Si wafers

    International Nuclear Information System (INIS)

    Hazra, S.; Chini, T.K.; Sanyal, M.K.; Grenzer, J.; Pietsch, U.

    2005-01-01

    Subsurface (amorphous-crystalline interface) structure of keV ion beam modified Si(001) wafers was studied for the first time using non-destructive technique and compared with that of the top one. Ion-beam modifications of the Si samples were done using state-of-art high-current ion implanter facility at Saha Institute of Nuclear Physics by changing energy, dose and angle of incidence of the Ar + ion beam. To bring out the underlying modification depth-resolved x-ray grazing incidence diffraction has been carried out using synchrotron radiation facility, while the structure of the top surface was studied through atomic force microscopy

  8. Heavy Ion Current Transients in SiGe HBTs

    Science.gov (United States)

    Pellish, Jonathan A.; Reed, Robert A.; Vizkelethy, Gyorgy; McMorrow, Dale; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philipe; Duhanel, Olivier; Phillips, Stanley D.; Sutton, Akil K.; hide

    2009-01-01

    Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: a) Position correlation[ b) Unique response for different bias schemes; c) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: a) Feedback using microbeam data; b) Overcome issues of LET and ion range with microbeam. Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.

  9. Diffusion of alpha-like MeV ions in TFTR

    International Nuclear Information System (INIS)

    Boivin, R.L.; Zweben, S.J.; Chang, C.S.; Hammett, G.; Mynick, H.E.; White, R.B.

    1991-01-01

    Single particle confinement of alpha particles is of crucial importance in reactor-grade tokamaks like BPX and ITER. Besides the well-known process of first-orbit losses, mechanisms that could lead to significant loss of alpha particles are turbulence-induced diffusion and toroidal field ripple stochastic diffusion. These two mechanisms have been separately studied in TFTR using two different detectors (one at the bottom of the machine and the other near the outer midplane) which can detect escaping charged fusion products, namely the 1 MeV triton and the 3 MeV proton in D-D plasmas (and also the 3.5 MeV alpha in D-T). The main difficulty in this type of experiment lies in the necessity of distinguishing the diffusion process from the always-present first-orbit loss-process. In this paper, we show how these two processes can be distinguished using the pitch-angle discrimination of the detectors. The pitch-angle is defined here as the angle of the particle trajectory with respect to the toroidal direction and so is a measure of the ion magnetic moment, μ. Results obtained at the midplane would be the first reported evidence of TF ripple diffusion in a tokamak. (author) 3 refs., 2 figs

  10. Design study of prototype accelerator and MeV test facility for demonstration of 1 MeV, 1 A negative ion beam production

    International Nuclear Information System (INIS)

    Inoue, Takashi; Hanada, Masaya; Miyamoto, Kenji; Ohara, Yoshihiro; Okumura, Yoshikazu; Watanabe, Kazuhiro; Maeno, Shuichi.

    1994-08-01

    In fusion reactors such as ITER, a neutral beam injector of MeV class beam energy and several tens MW class power is required as one of candidates of heating and current drive systems. However, the beam energy of existing high power accelerators are one order of magnitude lower than the required value. In order to realize a neutral beam injector for the fusion reactor, 'Proof-of-Principle' of such high energy acceleration is a critical issue at a reactor relevant beam current and pulse length. An accelerator and an accelerator facility which are necessary to demonstrate the Proof-of-Principle acceleration of negative ion beams up to 1 MeV, have been designed in the present study. The accelerator is composed of a cesium-volume type ion source and a multi-stage electrostatic acceleration system [Prototype Accelerator]. A negative hydrogen ion beam with the current of about one ampere (1 A) can be accelerated up to 1 MeV at a low operating pressure. Two types of acceleration system, a multi-multi type and a multi-single type, have been studied. The test facility has sufficient capability for the test of the Prototype Accelerator [MeV Test Facility]. The dc high voltage generator for negative ion acceleration is a Cockcroft-Walton type and capable of delivering 1 A at 1 MV (=1 MW) for 60 s. High voltage components including Prototype Accelerator are installed in a SF 6 vessel pressurized at 6 kg/cm 2 to overcome high voltage gradients. The vessel and the beamline are installed in a X-ray shield. (author)

  11. Structural disorder in sapphire induced by 90.3 MeV xenon ions

    International Nuclear Information System (INIS)

    Kabir, A.; Meftah, A.; Stoquert, J.P.; Toulemonde, M.; Monnet, I.; Izerrouken, M.

    2010-01-01

    In our previous work , we have evidenced, using RBS-C, two effects in the aluminium sublattice of sapphire irradiated with 90.3 MeV xenon ions: a partial disorder creation that saturates at ∼40% followed above a threshold fluence by a highly disordered layer appearing behind the surface. In this work, by RBS-C analysis of the oxygen sublattice, we have observed only one regime of partial disorder creation that saturates at ∼60% in tracks of cross-section double of that found for the aluminium sublattice. Complementary analysis by X-ray diffraction shows that the lattice strain increases with the fluence until a maximum is reached about 7.5 x 10 12 ions/cm 2 . For higher fluences, strain decreases first indicating a little stress relaxation in the material and tends afterwards, to remain constant. This stress relaxation is found to be related to the aluminium sublattice high disorder.

  12. Effects of high energy (MeV) ion beam irradiation on polyethylene terephthalate

    International Nuclear Information System (INIS)

    Singh, Nandlal; Sharma, Anita; Avasthi, D.K.

    2003-01-01

    Irradiation effects of 50 MeV Li 3+ ion beams in polyethylene terephthalate (PET) films were studied with respect to their structural and electrical properties by using Fourier transform infrared (FTIR) spectroscopy and ac electrical measurement in the frequency range: 50-100 kHz at different temperatures of 30-150 deg. C. It is found that ac resistivity of PET decreases as frequency increases. The temperature dependencies of dielectric loss tangent exhibit a peak (T g ) at 60 deg. C. The capacitance value of irradiated PET is almost temperature independent and ones increases with an increasing of lithium fluence. FTIR spectra show various bands related to C-H, C-O, C-O-C molecular bonds and groups which get modified or break down due to ion beam irradiation

  13. RBS cross-section of MeV ions channeling in crystals from quantum theory

    International Nuclear Information System (INIS)

    Den Besten, J.L.; Jamieson, D.N.; Spizzirri, P.G.; Allen, L.J.

    1999-01-01

    We present an alternative approach to describing Rutherford Backscattered (RBS) angular yield scans. The Bloch wave method to formulate the cross-section is a fundamental approach originating from Schrodinger's equation. This quantum formulation is often used when describing various aspects of electron diffraction including Backscattering, EDX and TEM but has seen little application to the very short wavelength regime of MeV ions. It offers several significant advantages. Great freedom is given to crystal properties and structure in the theory allowing a fundamental insight into the channeling phenomena and hence the crystal itself. We have calculated both planar and axial channeling scans and these maps are shown to be in good agreement to their experimental counterparts. There is excellent correlation between the theoretical and experimental results for both χ min and Ψ 1/2 . Further investigation is required into the area of absorption or dechanneling. This phenomenon requires different mechanisms for electron and ion scattering differ greatly

  14. Experimental study of the slowing down of heavy ions at 20 to 100 MeV per nucleon in matter

    International Nuclear Information System (INIS)

    Herault, J.

    1988-01-01

    The measurements of typical parameters on heavy ions penetration through matter presented in this work have been performed at the GANIL accelerator facility, using the LISE magnetic spectrometer from 20 to 100 MeV per nucleon. Two magnetic optical configurations of the spectrometer LISE corresponding respectively to energy and angle analysis, have been used. In the first configuration, the analysis of the energy loss distribution, caused by the interaction of the heavy ions beam with the target material, permit to determine the stopping power and the energy straggling. The stopping power is defined experimentally by the ratio of the average energy loss in the target to the thickness of this one. This quantity has been measured for a set of heavy ions ( 17 O, 40 Ar, 86 Kr and 132 Xe) in gaseous media (H 2 , He, N 2 , Ne, Ar, Kr, Xe, CH 4 , C 4 H 10 , CO 2 and CF 4 ) and compared to semi-empirical tabulations. These determinations are compared to those obtained in solid media to study the evolution of the solid-gas difference. This effect vanishes progressively when the projectile tends to be totally stripped (the charge state becomes identical to the atomic number). The heavy ion energy distributions at the exit of degraders and particularly their full width at half maximum have been measured for various projectiles ( 16 O, 40 Ar, 84 Kr, 86 Kr, 100 Mo and 132 Xe) in solid (Be, C, Al, Si, Ti, Ni, Cu, Ag, Ta, Au and Mylar) and gaseous media (the same as for stopping power determinations). A significant contribution of charge exchange straggling to the energy loss straggling is observed for partially stripped ions. A second optical configuration of the beam line LISE has been used, to obtain an image of heavy ions beams passing through targets for various heavy ions ( 16 O, 17 O, 40 Ar, 86 Kr and 100 Mo) in gaseous and solid media. The scaling law for angular straggling is confirmed and extended over five orders of magnitude [fr

  15. Metallization of ion beam synthesized Si/3C-SiC/Si layer systems by high-dose implantation of transition metal ions

    International Nuclear Information System (INIS)

    Lindner, J.K.N.; Wenzel, S.; Stritzker, B.

    2001-01-01

    The formation of metal silicide layers contacting an ion beam synthesized buried 3C-SiC layer in silicon by means of high-dose titanium and molybdenum implantations is reported. Two different strategies to form such contact layers are explored. The titanium implantation aims to convert the Si top layer of an epitaxial Si/SiC/Si layer sequence into TiSi 2 , while Mo implantations were performed directly into the SiC layer after selectively etching off all capping layers. Textured and high-temperature stable C54-TiSi 2 layers with small additions of more metal-rich silicides are obtained in the case of the Ti implantations. Mo implantations result in the formation of the high-temperature phase β-MoSi 2 , which also grows textured on the substrate. The formation of cavities in the silicon substrate at the lower SiC/Si interface due to the Si consumption by the growing silicide phase is observed in both cases. It probably constitutes a problem, occurring whenever thin SiC films on silicon have to be contacted by silicide forming metals independent of the deposition technique used. It is shown that this problem can be solved with ion beam synthesized contact layers by proper adjustment of the metal ion dose

  16. The structure modification of Si-SiO2 irradiated by Fe+ ion

    International Nuclear Information System (INIS)

    Jin Tao; Ma Zhongquan; Guo Qi

    1992-01-01

    The effect of the iron ion implantation on the oxide surface and SiO 2 -Si interface of MOS structure was studied by X-ray photo-electron spectroscopy (XPS), and the chemical states of compounds formed were examined. The results obtained show that in the surface layers of SiO 2 the pure Si micro-regions are formed under the implantation and the interface layers of SiO 2 the pure Si micro-regions are formed under the implantation and the interface thickness is almost doubled that leads to failure of MOS capacitors. The physical and chemical mechanisms of MOS structure change by Fe + ion implantation are also discussed and analyzed

  17. Central collisions between 28Si nuclei at 12.4, 19.7 and 30.0 MeV per nucleon

    International Nuclear Information System (INIS)

    Meijer, R.J.

    1989-01-01

    The formation and decay of nuclei in central collisions of the 28 Si + 28 Si system at bombarding energies of 12.4, 19.7 and 30.0 MeV per nucleon is studied by analysis of the light particle (LP) spectra measured in coincidence with evaporation residues (ER) and measurements of the inclusive velocity distribution of ER's. From the last set of measurements a strong reduction of the ER cross section at increasing incident energy was observed and especially the relation to a possible vanishing fusion cross section is discussed. The coincidence measurements determines the LP pre-equilibrium contribution and the LP decay modes of highly excited systems. The ER's produced in fusion reactions between 28 Si nuclei were detected with a simple ionization chamber ΔE detector and a surface barrier E detector. For the LP detection multidetector systems consisting of CsI(TL) detectors were used. In this thesis the developments that have led to the construction of a CsI(TL) charged particle detector and of the Utrecht multidetector system, the experimental setup and the methods used in the acquisition, processing and analysis of the data, are described. The results of the heavy-ion velocity measurements are presented and conclusions are drawn about equilibrium and pre-equilibrium processes from the analysis. (H.W.). 124 refs.; 44 figs.; 24 tabs

  18. Ion induced intermixing and consequent effects on the leakage currents in HfO{sub 2}/SiO{sub 2}/Si systems

    Energy Technology Data Exchange (ETDEWEB)

    Manikanthababu, N.; Saikiran, V.; Pathak, A.P.; Rao, S.V.S.N. [University of Hyderabad, School of Physics, Hyderabad (India); Chan, T.K.; Vajandar, S.; Osipowicz, T. [National University of Singapore, Department of Physics, Centre for Ion Beam Applications (CIBA), Singapore (Singapore)

    2017-05-15

    Atomic layer deposited (ALD) samples with layer stacks of HfO{sub 2} (3 nm)/SiO{sub 2} (0.7 nm)/Si were subjected to 120 MeV Au ion irradiation at different fluences to study intermixing effects across the HfO{sub 2}/SiO{sub 2} interface. High-resolution Rutherford backscattering spectrometry (HRBS) and X-ray reflectivity (XRR) measurements confirm an increase in the interlayer thickness as a result of SHI induced intermixing effects. Current-voltage (I-V) measurements reveal an order of magnitude difference in the leakage current density between the pristine and irradiated samples. This can be explained by considering the increased physical thickness of interlayer (HfSiO). Furthermore, the samples were subjected to rapid thermal annealing (RTA) process to analyze annealing kinetics. (orig.)

  19. Si nanoparticle-decorated Si nanowire networks for Li-ion battery anodes

    KAUST Repository

    Hu, Liangbing

    2011-01-01

    We designed and fabricated binder-free, 3D porous silicon nanostructures for Li-ion battery anodes, where Si nanoparticles electrically contact current collectors via vertically grown silicon nanowires. When compared with a Si nanowire anode, the areal capacity was increased by a factor of 4 without having to use long, high temperature steps under vacuum that vapour-liquid-solid Si nanowire growth entails. © 2011 The Royal Society of Chemistry.

  20. Swift heavy-ion induced trap generation and mixing at Si/SiO{sub 2} interface in depletion n-MOS

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N. [Ecotopia Science Institute, Division of Energy Science, Nagoya University, Nagoya 464-8603 (Japan) and Department of Physics, University of Pune, Pune 411 007 (India)]. E-mail: nss@nucl.nagoya-u.ac.jp; Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411 007 (India); Dhole, S.D. [Department of Physics, University of Pune, Pune 411 007 (India)

    2006-01-15

    Large channel depletion n-channel MOSFET (Metal oxide semiconductor field effect transistor) is a basic Si-SiO{sub 2} structure to understand irradiation-induced modifications. The contribution of interface and oxide states denoted as {delta}N {sub IT} and {delta}N {sub OT}, respectively, was separated out by using I {sub D}-V {sub DS}, I {sub D}-V {sub GS} measurements. The threshold voltage shift {delta}V {sub T} (V {sub T-irrad} - V {sub T-virgin}) increased for all ions (50 MeV Li, B, F, P and Ni) over the fluence of 2 x 10{sup 11}-2 x 10{sup 13} ions/cm{sup 2}. The increase in {delta}N {sub IT} was associated to trap generation at Si-SiO{sub 2} interface, but a small change in {delta}N {sub OT} indicate less charge trapping in oxide. The electronic energy loss S {sub e} induced increase in {delta}N {sub IT} is not adequate to explain the large shift in threshold voltage. A rough estimate shows that the channel width, W should decrease by 40% for a large increase in {delta}N {sub IT}. Thus, the possible factor affecting reduction of W may be ion beam mixing induced broadening of Si-SiO{sub 2} interface.

  1. Implantation of P ions in SiO{sub 2} layers with embedded Si nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Kachurin, G.A. E-mail: kachurin@isp.nsc.ru; Cherkova, S.G.; Volodin, V.A.; Kesler, V.G.; Gutakovsky, A.K.; Cherkov, A.G.; Bublikov, A.V.; Tetelbaum, D.I

    2004-08-01

    The effect of 10{sup 13}-10{sup 16} cm{sup -2} P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO{sub 2} layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000 deg. C. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000 deg. C are inefficient when P ion fluences exceed 10{sup 14} cm{sup -2}, thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulk Si. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs.

  2. Implantation of P ions in SiO2 layers with embedded Si nanocrystals

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Cherkova, S.G.; Volodin, V.A.; Kesler, V.G.; Gutakovsky, A.K.; Cherkov, A.G.; Bublikov, A.V.; Tetelbaum, D.I.

    2004-01-01

    The effect of 10 13 -10 16 cm -2 P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO 2 layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000 deg. C. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000 deg. C are inefficient when P ion fluences exceed 10 14 cm -2 , thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulk Si. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs

  3. High energy (MeV) ion-irradiated π-conjugated polyaniline: Transition from insulating state to carbonized conducting state

    International Nuclear Information System (INIS)

    Park, S.K.; Lee, S.Y.; Lee, C.S.; Kim, H.M.; Joo, J.; Beag, Y.W.; Koh, S.K.

    2004-01-01

    High energy (MeV) C 2+ , F 2+ , and Cl 2+ ions were irradiated onto π-conjugated polyaniline emeraldine base (PAN-EB) samples. The energy of an ion beam was controlled to a range of 3-4.5 MeV, with the ion dosage varying from 1x10 12 to 1x10 16 ions/cm 2 . The highest dc conductivity (σ dc ) at room temperature was measured to be ∼60 S/cm for 4.5 MeV Cl 2+ ion-irradiated PAN-EB samples with a dose of 1x10 16 ions/cm 2 . We observed the transition of high energy ion-irradiated PAN-EB samples from insulating state to conducting state as a function of ion dosage based on σ dc and its temperature dependence. The characteristic peaks of the Raman spectrum of the PAN-EB samples were reduced, while the D-peak (disordered peak) and the G peak (graphitic peak) appeared as the ion dose increased. From the analysis of the D and G peaks of the Raman spectra of the systems compared to multiwalled carbon nanotubes, ion-irradiated graphites, and annealed carbon films, the number of the clusters of hexagon rings with conducting sp 2 -bonded carbons increased with ion dosage. We also observed the increase in the size of the nanocrystalline graphitic domain of the systems with increasing ion dosage. The intensity of normalized electron paramagnelic resonance signal also increased in correlation with ion dose. The results of this study demonstrate that π-conjugated pristine PAN-EB systems changed from insulating state to carbonized conducting state through high energy ion irradiation with high ion dosage

  4. Experimental and Calculated Effectiveness of a Radiochromic Dye Film to Stopping 21 MeV 7Li- and 64 MeV 16O Ions

    DEFF Research Database (Denmark)

    Olsen, Kjeld J; Hansen, Johnny

    1984-01-01

    Relative radiation effectiveness, RE, of 21 MeV 7Li and 64 MeV 16O ions being completely stopped in a tissue equivalent film dose meter has been measured as a function of penetration depth and energy, and the results have been compared with calculations based on a δ-ray theory for heavy charged...... particles developed by Katz et al. The experiment was designed to test calculations particularly in the Bragg-peak region of the slowing down particles where significant deviation between theory and experiment was found. Fitting of the characteristic D37 dose and the size of the radiation sensitive element...... in the detector, which are important parameters in the theoretical model, does not improve the overall correlation between theory and experiment. It is concluded that disagreement between theoretical and experimental RE-values below 1.5 MeV/amu is partly due to lack of equivalence between the δ-ray spectrum...

  5. Calibration of BAS-TR image plate response to high energy (3-300 MeV) carbon ions

    Science.gov (United States)

    Doria, D.; Kar, S.; Ahmed, H.; Alejo, A.; Fernandez, J.; Cerchez, M.; Gray, R. J.; Hanton, F.; MacLellan, D. A.; McKenna, P.; Najmudin, Z.; Neely, D.; Romagnani, L.; Ruiz, J. A.; Sarri, G.; Scullion, C.; Streeter, M.; Swantusch, M.; Willi, O.; Zepf, M.; Borghesi, M.

    2015-12-01

    The paper presents the calibration of Fuji BAS-TR image plate (IP) response to high energy carbon ions of different charge states by employing an intense laser-driven ion source, which allowed access to carbon energies up to 270 MeV. The calibration method consists of employing a Thomson parabola spectrometer to separate and spectrally resolve different ion species, and a slotted CR-39 solid state detector overlayed onto an image plate for an absolute calibration of the IP signal. An empirical response function was obtained which can be reasonably extrapolated to higher ion energies. The experimental data also show that the IP response is independent of ion charge states.

  6. Stopping power of liquid water for carbon ions in the energy range between 1 MeV and 6 MeV

    International Nuclear Information System (INIS)

    Rahm, J M; Baek, W Y; Rabus, H; Hofsäss, H

    2014-01-01

    The stopping power of liquid water was measured for the first time for carbon ions in the energy range between 1 and 6 MeV using the inverted Doppler shift attenuation method. The feasibility study carried out within the scope of the present work shows that this method is well suited for the quantification of the controversial condensed phased effect in the stopping power for heavy ions in the intermediate energy range. The preliminary results of this work indicate that the stopping power of water for carbon ions with energies prevailing in the Bragg-peak region is significantly lower than that of water vapor. In view of the relatively high uncertainty of the present results, a new experiment with uncertainties less than the predicted difference between the stopping powers of both water phases is planned. (paper)

  7. Momentum transfer with light ions at energies from 70 MeV to 1000 MeV

    International Nuclear Information System (INIS)

    Saint Laurent, F.; Conjeaud, M.; Dayras, R.; Harar, S.; Oeschler, H.; Volant, C.

    1982-01-01

    Angular correlations of fission fragments induced by bombarding a 232 Th target with protons, deuterons and alpha particles of energies from 70 MeV to 1000 MeV have been measured. They give information about the forward momentum imparted to the fissioning nuclei. We present the average values of the transferred linear momentum ([p vertical stroke vertical stroke ]) as a function of the incident energy and propose a classification into three regimes of dominating processes leading to fission: (I) low-energy behaviour, for E/A less than 10 MeV/u [p vertical stroke vertical stroke ]/psub(i) approx. equal to 1. (II) Between 10 MeV/u and about 70 MeV/u, [p vertical stroke vertical stroke ]/psub(i) decreases progressively down to 0.5 but remains proportional to the projectile mass. (III) The region between 70 MeV/u and about 1000 MeV/u corresponds to a transition region where the projectiles, whatever their masses, tend to transfer the same momentum. (orig.)

  8. Ion-beam-driven amorphization of Ca2La8(SiO4)6O2 single crystals

    International Nuclear Information System (INIS)

    Weber, W.J.; Hess, N.J.; Wang, L.M.

    1993-11-01

    Single crystals of Ca 2 La 8 (SiO 4 ) 6 O 2 , with 1% Nd substituted for La, were irradiated with 0.8 MeV Ne + and 1.5 MeV Kr + ions from 15 to 773 K. The irradiations were carried out using the HVEM-Tandem Facility at Argonne National Laboratory. The structural changes and the ion fluence for complete amorphization were determined by in situ transmission electron microscopy. The ion fluence for complete amorphization increased with temperature in two stages associated with defect annealing processes. The critical temperature for amorphization increased from ∼360 K for 0.8 MeV Ne + to ∼710 K for 1.5 MeV Kr + . During in situ annealing studies, irradiation-enhanced recrystallization was observed at 923 K. Spatially-resolved fluorescence spectra of the Nd ion excited with 488.0 mn laser excitation showed marked line-broadening toward the center of the amorphous regions. Initial measurements indicate the subtle shifts of the 9 I 9/2 groundstate energy levels can be measured by pumping directly into the excited state 4 F 3/2 manifold suggesting that the line broadening observed originates from a distribution of geometrically distorted Nd sites

  9. High repetition rate laser-driven MeV ion acceleration at variable background pressures

    Science.gov (United States)

    Snyder, Joseph; Ngirmang, Gregory; Orban, Chris; Feister, Scott; Morrison, John; Frische, Kyle; Chowdhury, Enam; Roquemore, W. M.

    2017-10-01

    Ultra-intense laser-plasma interactions (LPI) can produce highly energetic photons, electrons, and ions with numerous potential real-world applications. Many of these applications will require repeatable, high repetition targets that are suitable for LPI experiments. Liquid targets can meet many of these needs, but they typically require higher chamber pressure than is used for many low repetition rate experiments. The effect of background pressure on the LPI has not been thoroughly studied. With this in mind, the Extreme Light group at the Air Force Research Lab has carried out MeV ion and electron acceleration experiments at kHz repetition rate with background pressures ranging from 30 mTorr to >1 Torr using a submicron ethylene glycol liquid sheet target. We present these results and provide two-dimensional particle-in-cell simulation results that offer insight on the thresholds for the efficient acceleration of electrons and ions. This research is supported by the Air Force Office of Scientific Research under LRIR Project 17RQCOR504 under the management of Dr. Riq Parra and Dr. Jean-Luc Cambier. Support was also provided by the DOD HPCMP Internship Program.

  10. 100 MeV Ag{sup 7+} ion induced physicochemical changes in isotactic polypropylene

    Energy Technology Data Exchange (ETDEWEB)

    Mathakari, N.L. [Microtron Accelerator Laboratory, Department of Physics, University of Pune, Ganeshkhind, Pune 411007, Maharashtra (India); Kanjilal, D. [Inter University Accelerator Center, New Delhi (India); Bhoraskar, V.N. [Microtron Accelerator Laboratory, Department of Physics, University of Pune, Ganeshkhind, Pune 411007, Maharashtra (India); Dhole, S.D. [Microtron Accelerator Laboratory, Department of Physics, University of Pune, Ganeshkhind, Pune 411007, Maharashtra (India)], E-mail: sanjay@physics.unipune.ernet.in

    2008-04-15

    Thin films of isotactic polypropylene having 500 {mu}m thickness were irradiated with 100 MeV Ag{sup 7+} ions at the fluences varying from 10{sup 11} to 5 x 10{sup 12} ions/cm{sup 2}. The properties such as chemical, optical, structural and surface morphology were characterized by techniques namely FTIR, UV-visible, photoluminescence, XRD, SEM and contact angle method. The FTIR spectra show the scissioning of C-H and C-C bonds, whereas, in photoluminescence, the intensities of the peaks at 440 and 480 nm in emission spectra and at 236 nm in excitation spectra observed to be decreased with increase in ion fluence. This may be due to the decomposition of luminescent centers. The UV-visible spectra also show a remarkable red shift from 218 to 367 nm and the subsequent large reduction in the optical band gap from 5.37 to 3.39 eV. This attributes to the carbonization or graphitization of polypropylene. On the contrary, the intensities of XRD peaks, particularly the peak due to 1 1 0 planes, shows sufficient enhancement which signifies overall increase in crystallinity. This ascribes to relief in the local strain on the crystallites due to scissioning of tie molecules in the amorphous zones. The contact angle has increased from 78 deg. to 97 deg. which reveals the absence of hydrophilic functional groups, carbonization and surface roughening. The result is also supported by SEM analysis.

  11. Investigations on 40 MeV Li3+ ions irradiated GaN epilayers

    International Nuclear Information System (INIS)

    Suresh Kumar, V.; Kumar, J.; Kanjilal, D.; Asokan, K.; Mohanty, T.; Tripathi, A.; Rossi, Francisca; Zappettini, A.; Lazzarani, L.; Ferrari, C.

    2008-01-01

    The Metal Organic Chemical Vapour Deposition (MOCVD) grown n-type Gallium nitride (GaN) layers on sapphire (0 0 0 1) substrates have been irradiated at low and room temperatures with 40 MeV Li 3+ ions at the fluence of 1 x 10 13 ions cm -2 . Irradiated samples were characterised by using X-ray diffraction (XRD), photoluminescence (PL), Raman spectroscopy and atomic force microscopy (AFM). XRD results show that the formation of Ga 2 O 3 has been observed upon irradiation. This is due to interface mixing of GaN/Al 2 O 3 , at both temperatures. Also the GaN (0 0 0 2) peak splits into two at low temperature irradiation. PL measurements show a yellow emission band shift towards blue band side upon irradiation at 77 K. Raman studies indicate that the lattice disorder is high at room temperature irradiation compared to low temperature irradiation. AFM images indicate the increasing surface roughness after ion irradiation at room temperature when compared to pristine GaN and low temperature irradiated GaN. These observations are discussed in detail with the use of complementary techniques

  12. Magnetic properties of a stainless steel irradiated with 6 MeV Xe ions

    Science.gov (United States)

    Xu, Chaoliang; Liu, Xiangbing; Qian, Wangjie; Li, Yuanfei

    2017-11-01

    Specimens of austenitic stainless steel were irradiated with 6 MeV Xe ions at room temperature to 2, 7, 15 and 25 dpa. The vibrating sample magnetometer (VSM), grazing incidence X-ray diffraction (GIXRD) and positron annihilation lifetime spectroscopy (PLS) were carried out to analysis the magnetic properties and microstructural variations. The magnetic hysteresis loops indicated that higher irradiation damage causes more significant magnetization phenomenon. The equivalent saturated magnetization Mes and coercive force Hc were obtained from magnetic hysteresis loops. It is indicated that the Mes increases with irradiation damage. While Hc increases first to 2 dpa and then decreases continuously with irradiation damage. The different contributions of irradiation defects and ferrite precipitates on Mes and Hc can explain these phenomena.

  13. Restoration of an electrical breakdown Terahertz emitter by 2 MeV He+ ion implantation

    International Nuclear Information System (INIS)

    Yang kang; Ma Mingwang; Chen Xiliang; Zhu Zhiyong

    2009-01-01

    The irradiation of solids by energetic particles may cause extensive displacement cascades and point defects (vacancies and interstitials), and can be widely used for material modification. In order to repair an electrical breakdown photoconductive antenna (PCA), we irradiated the (100)-oriented, low-temperature (LT) grown GaAs substrate with 10 16 /cm 2 of 2 MeV helium ions. After being implanted, electric resistance of the PCA has increased from 800 Ω to 60 ΜΩ. The irradiated PCA exhibits improvements in the output power in comparison with the electrical breakdown PCA and its signal intensity has increased from 2 nA to 8 nA. Accordingly, its output power has become more than one order of magnitude higher than that before irradiation. The frequency range of PCA has obviously improvement. (authors)

  14. Damage nucleation in Si during ion irradiation

    International Nuclear Information System (INIS)

    Holland, O.W.; Fathy, D.; Narayan, J.

    1984-01-01

    Damage nucleation in single crystals of silicon during ion irradiation is investigated. Experimental results and mechanisms for damage nucleation during both room and liquid nitrogen temperature irradiation with different mass ions are discussed. It is shown that the accumulation of damage during room temperature irradiation depends on the rate of implantation. These dose rate effects are found to decrease in magnitude as the mass of the ions is increased. The significance of dose rate effects and their mass dependence on nucleation mechanisms is discussed

  15. Modelling of ion implantation in SiC crystals

    Energy Technology Data Exchange (ETDEWEB)

    Chakarov, Ivan [SILVACO International, 4701 Patrick Henry Drive, Building 2, Santa Clara, CA 95054 (United States)]. E-mail: ivan.chakarov@silvaco.com; Temkin, Misha [SILVACO International, 4701 Patrick Henry Drive, Building 2, Santa Clara, CA 95054 (United States)

    2006-01-15

    An advanced electronic stopping model for ion implantation in SiC has been implemented within the binary collision approximation. The model has been thoroughly tested and validated for Al implantation into 4H-, 6H-SiC under different initial implant conditions. A very good agreement between calculated and experimental profiles has been achieved. The model has been integrated in an industrial technology CAD process simulator.

  16. Modelling of ion implantation in SiC crystals

    International Nuclear Information System (INIS)

    Chakarov, Ivan; Temkin, Misha

    2006-01-01

    An advanced electronic stopping model for ion implantation in SiC has been implemented within the binary collision approximation. The model has been thoroughly tested and validated for Al implantation into 4H-, 6H-SiC under different initial implant conditions. A very good agreement between calculated and experimental profiles has been achieved. The model has been integrated in an industrial technology CAD process simulator

  17. Modification of structure and optical band-gap of nc-Si:H films with ion irradiation

    International Nuclear Information System (INIS)

    Zhu Yabin; Wang Zhiguang; Sun Jianrong; Yao Cunfeng; Shen Tielong; Li Bingsheng; Wei Kongfang; Pang Lilong; Sheng Yanbin; Cui Minghuan; Li Yuanfei; Wang Ji; Zhu Huiping

    2012-01-01

    Hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated by using hot-wire chemical vapor deposition are irradiated at room temperature with 6.0 MeV Xe-ions. The irradiation fluences are 1.0 × 10 13 , 5.0 × 10 13 and 1.0 × 10 14 Xe-ions/cm 2 . The structure and optical band-gap of the irradiated films varying with ion fluence are investigated by means of X-ray diffraction, Raman and UV–Vis–NIR spectroscopes, as well as transmission electron microscopy. It is found that the crystallite size, the crystalline fraction and the optical band-gap decrease continuously with increasing the ion fluence. The crystalline fraction of the films irradiated to the fluences from 0 to 1.0 × 10 14 Xe-ions/cm 2 decreases from about 65.7% to 2.9% and the optical band-gap decreases from about 2.1 to 1.6 eV. Possible origins of the modification of the nc-Si:H films under 6.0 MeV Xe-ions irradiation are briefly discussed.

  18. Surface damage studies of ETFE polymer bombarded with low energy Si ions (≤100 keV)

    International Nuclear Information System (INIS)

    Minamisawa, Renato Amaral; Almeida, Adelaide De; Budak, Satilmis; Abidzina, Volha; Ila, Daryush

    2007-01-01

    Surface studies of ethylenetetrafluoroethylene (ETFE), bombarded with Si in a high-energy tandem Pelletron accelerator, have recently been reported. Si ion bombardment with a few MeV to a few hundred keV energies was shown to be sufficient to produce damage on ETFE film. We report here the use of a low energy implanter with Si ion energies lower than 100 keV, to induce changes on ETFE films. In order to determine the radiation damage, ETFE bombarded films were simulated with SRIM software and analyzed with optical absorption photometry (OAP), Raman and Fourier transform infrared-attenuated total reflectance (FTIR-ATR) spectroscopy to show quantitatively the physical and chemical property changes. Carbonization occurs following higher dose implantation, and hydroperoxides were formed following dehydroflorination of the polymer

  19. 160 MeV Ni12+ ion irradiation effects on the dielectric properties of polyaniline nanotubes

    International Nuclear Information System (INIS)

    Hazarika, J.; Nath, Chandrani; Kumar, A.

    2012-01-01

    We report on the dielectric properties and a.c. conductivity studies of CSA doped polyaniline nanotubes. Nanotubes of 47–100 nm diameter, were synthesized by the self-assembly method and irradiated using Ni 12+ ions of 160 MeV energy with fluences of 1 × 10 10 , 5 × 10 10 , 1 × 10 11 and 3 × 10 11 ions/cm 2 . X-ray diffraction studies reveal an increase in the degree of crystallinity and consequently, the extent of order of the nanotubes with increasing fluence, but show a lower degree of crystallinity at higher fluence. The decrease in d-spacing for the (100) reflections with fluence is ascribed to the decrease in the tilt angle of the aligned polymer chains. A significant change was seen after irradiation in dielectric and electrical properties which may be correlated with the increased carrier concentration and structural modifications in the polymer films. The surface conductivity of films increases with increasing fluence, which also decreases at higher fluence. The a.c. conduction mechanism for the nanotubes could be explained in terms of correlated barrier hopping model. The existence of polarons as the major charge carriers in the present nanotube system was confirmed by the low values of polaron binding energy, found to decrease with fluence. The hopping distance increases with fluence indicating that the hopping probability increases with fluence.

  20. Charge-state distribution in close collisions of 3 MeV C2+ ions with Ag and Au atoms

    NARCIS (Netherlands)

    Boerma, D.O; Arnoldbik, W.M.; Kabachnik, N.M.; Khodyrev, V.A.

    The charge-state distributions of 3 MeV carbon ions scattered over angles of 40 degrees and 60 degrees from sub-monolayers of Ag and Au atoms evaporated on a substrate and from thick layers of Ag and Au have been measured. A close similarity of the charge distributions in all cases is interpreted as

  1. Fluctuation Induced Conductivity Studies of 100 MeV Oxygen Ion Irradiated Pb Doped Bi-2223 Superconductors

    NARCIS (Netherlands)

    Banerjee, Tamalika; Kumar, Ravi; Kanjilal, D.; Ramasamy, S.

    2000-01-01

    We report on 100 MeV oxygen ion irradiation in Pb doped Bi-2223 superconductors. Resistivity measurements reveal that both grains as well as the grain boundaries are affected by such irradiation. An analysis of the excess conductivity has been made within the framework of Aslamazov-Larkin (AL) and

  2. Comparison of 4.2 MeV Fe+ and 46.5 MeV Ni6+ ion irradiation for the study of void swelling

    International Nuclear Information System (INIS)

    Blamires, N.G.; Worth, J.H.

    1975-11-01

    Void formation in pure nickel and 316 steel containing 10 ppm He has been studied using 4.2 MeV Fe+ ions from the Harwell Van de Graaff accelerator. The dose dependence of swelling in nickel at 525degC and the dose and temperature dependence of swelling in 316 steel is reported. The results are compared with those of other workers, especially those sup(13,14) using 46.5 MeV Ni 6+ ions. In general, there is good agment, except for a marked decrease in swelling of 316 steel at 650degC and 700degC compared with the Ni 6+ bombardment. The reason for this is thought to result from the restricted width of the damaged region in the low energy case which at the high temperatures is comparable with the inter-void spacing. Anomalous void distributions adjacent to grain boundaries are reported and are probably caused by grain boundary movement. Denuded zones at grain boundaries in 316 steel vary in width from approximatly 1300A at 450degC to approximatly 8800A at 700degC. The region adjacent to the surface of the nickel specimens exhibits an abnormally high swelling. Possible explanations are suggested

  3. Elastic scattering of 28Si + 40Ca system at Elab = 225 MeV

    International Nuclear Information System (INIS)

    Ashok Kumar; Srivastava, Amita; Kumar, Sarita; Seth, Madhup; Srivastava, B.B.; Mishra, R.C.

    1996-01-01

    The real part of nucleus-nucleus interaction for 28 Si + 40 Ca system was microscopically calculated in terms of antisymmetrised shell model wave functions using equivalence relation between RGM and GCM

  4. Fusion evaporation-residue cross sections for 28Si+40Ca at E(28Si)=309, 397, and 452 MeV

    International Nuclear Information System (INIS)

    Vineyard, M.F.; Bauer, J.S.; Crum, J.F.; Gosdin, C.H.; Trotter, R.S.; Kovar, D.G.; Beck, C.; Henderson, D.J.; Janssens, R.V.F.; Wilkins, B.D.; Maguire, C.F.; Mateja, J.F.; Prosser, F.W.; Stephans, G.S.F.

    1992-01-01

    Velocity distributions of mass-identified evaporation residues produced in the 28 Si+ 40 Ca reaction have been measured at bombarding energies of 309, 397, and 452 MeV using time-of-flight techniques. These distributions were used to identify evaporation residues and to separate the complete-fusion and incomplete-fusion components. Angular distributions and upper limits for the total evaporation-residue and complete-fusion evaporation-residue cross sections were extracted at all three bombarding energies. The complete-fusion evaporation-residue cross sections and the deduced critical angular momenta are compared with earlier measurements and the predictions of existing models. The ratios of the complete-fusion evaporation-residue cross section to the total evaporation-residue cross section, along with those measured for the 28 Si+ 12 C and 28 Si+ 28 Si systems at the same energies, support the entrance-channel mass-asymmetry dependence of the incomplete-fusion evaporation-residue process reported earlier

  5. Study of transfer induced fission and fusion-fission reactions for 28 Si + 232 Th system at 340 MeV

    International Nuclear Information System (INIS)

    Prete, G.; Rizzi, V.; Fioretto, E.; Cinausero, M.; Shetty, D.V.; Pesente, S.; Brondi, A.; La Rana, G.; Moro, R.; Vardaci, E.; Boiano, A.; Ordine, A.; Gelli, N.; Lucarelli, F.; Bortignon, P.F.; Saxena, A.; Nayak, B.K.; Biswas, D.C.; Choudhury, R.K.; Kapoor, R.S.

    2001-01-01

    Full text: Fission induced by nucleons transfer has been investigated in the reaction 28 Si + 232 Th at 340 MeV. Looking at the projectile-like-fragments (PLF), the fission yield increases as the transfer increases, but a decreases is observed for transfers with DZ . Light charged particles in coincidence with PLF and Fission have been detected with large solid angle and show an increasing multiplicity as the Z of PLF is reduced and a constant value when fission is requested. The present results indicate inhibition of transfer induced fission reaction for higher Z transfer and increasing probability for decay through charged particle evaporation. Fission is the dominant decay process in heavy reactions involving fissile systems but the dynamical evolution of the composite system is largely governed by the formation and decay mechanisms. Important insight into the formation and the survival probability of the heavy composite nuclei formed in heavy ion collisions can be gained by simultaneously investigate the fission process and light particle emission over a continuous range of excitation energy, angular momentum and fissility. This can be achieved by studying fission induced by transfer of nucleons between the interacting projectile and the target nucleus. In the present work, we have carried out measurements on multinucleon transfer induced fission reactions in 28 Si + 232 Th system at Elab = 340 MeV. The experiment has been performed at the Laboratori Nazionale di Legnaro (LNL) using the 8pLP detector in its final configuration with 257 DE-E telescopes. The backward detectors were used to measure both light charged particles and fission fragments. The projectile-like fragments were detected using separate DE-E telescopes around the grazing angle. Two neutron detectors were placed at a distance of 115.5 cm from the target to measure neutrons emitted in coincidence with fission fragments. Here we present the results of the data analysis of transfer induced fission

  6. Conceptual study of a heavy-ion-ERDA spectrometer for energies below 6 MeV

    Science.gov (United States)

    Julin, Jaakko; Sajavaara, Timo

    2017-09-01

    Elastic recoil detection analysis (ERDA) is a well established technique and it offers unique capabilities in thin film analysis. Simultaneous detection and depth profiling of all elements, including hydrogen, is possible only with time-of-flight ERDA. Bragg ionization chambers or ΔE - E detectors can also be used to identify the recoiling element if sufficiently high energies are used. The chief limitations of time-of-flight ERDA are the beam induced sample damage and the requirement of a relatively large accelerator. In this paper we propose a detector setup, which could be used with 3 MeV to 6 MeV medium heavy beams from either a single ended accelerator (40Ar) or from a tandem accelerator (39K). The detector setup consists of two timing detectors and a gas ionization chamber energy detector. Compared to use of very heavy low energy ions the hydrogen recoils with this beam have sufficient energy to be detected with current gas ionization chamber energy detector. To reduce the beam induced damage the proposed detector setup covers a solid angle larger than 1 msr, roughly an order of magnitude improvement over most time-of-flight ERDA setups. The setup could be used together with a small accelerator to be used for light element analysis of approximately 50 nm films. The concept is tested with 39K beam from a 1.7 MV Pelletron tandem accelerator with the Jyväskylä ToF-ERDA setup. In addition to the measurements effects related to low energies and increase in the solid angle are simulated with Monte Carlo methods.

  7. Capacitance-voltage investigation of silicon photodiodes damaged by MeV energy light ions

    International Nuclear Information System (INIS)

    Kalinka, G.; Simon, A.; Novak, M.; Kiss, A.Z.

    2006-01-01

    Complete text of publication follows. Nuclear radiation creates not only deep centers, but in addition influences shallow dopant concentration in semiconductors, as well. At a given temperature the maximum frequency a center can respond to depends on its energy level, therefore the capacitance-voltage (C-V) characteristics of radiation damaged semiconductor diodes should ideally be measured as function of frequency in order to obtain the physical and energy depth distribution of ionized centers [1,2]. In our experiments C-V plots of MeV energy ion irradiated photodiodes were taken at fixed 1 kHz frequency, which is low enough to be sensitive at room temperature to some of the deep levels expected. During, for example, an irradiation with 5.5 MeV α particles the capacitance of a p + nn + diode increased significantly at low voltages, but showed rather small changes at higher ones. The former turned out to be merely related to a decrease of the built in voltage, corresponding to a lifetime to relaxation type transition of the semiconductor [3]. Rescaling C-V data for this change, the remaining, actual capacitance changes could be interpreted as related to nuclear recoil caused damage located around the end of particle tracks. C-V technique has also been used for follow up investigation of spontaneous self annealing at room temperature of irradiated samples. This is shown here by plotting capacitance data normalized to their virgin values as function of depletion depth for irradiation with 430 keV protons, whose range is about 5 μm. The sensitivity of the method is illustrated for low fluence of 6.5 MeV oxygen, whose range is 5 μm, too, and where the normalization is now made to data taken one week after the irradiation. Acknowledgement This work was supported by the Hungarian Research and Technology Innovation Fund and the Croatian Ministry of Science, Education and Sports within the framework of the Hungarian-Croatian Intergovernmental Science and Technology Co

  8. Au L-shell ionization by Si and S ions

    International Nuclear Information System (INIS)

    Berinde, A.; Ciortea, C.; Enulescu, A.; Fluerasu, D.; Piticu, I.; Zoran, V.; Trautmann, D.

    1984-01-01

    We present the following experimental results on Au L-shell ionization: (1) in the bombarding energy range 0.25-2.5 MeV/u, absolute X-ray yields and the L 3 -vacancy integral alignment for Si, and cross section ratios for Si and S as projectiles; (2) at 32 MeV sulphur energy, subshell ionization probability ratios and the components A 20 (b) and A 22 (b) of the statistical tensor describing the L 3 -vacancy for impact parameters b=20-450 fm. A comparison of the data to SCA calcualtions reveals, except perhaps for the differential alignment, important discrepancies relative to the theoretical predictions. (orig./BRB)

  9. Enhanced diffusion of dopants in vacancy supersaturation produced by MeV implantation

    International Nuclear Information System (INIS)

    Venezia, V.C.; Univ. of North Texas, Denton, TX; Haynes, T.E.; Agarwal, A.; Lucent Technologies, Murray Hill, NJ; Gossmann, H.J.; Eaglesham, D.J.

    1997-04-01

    The diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si + , 1 x 10 16 /cm 2 , implant. A 4x larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10x smaller diffusion relative to markers without the MeV Si + implant. This data demonstrates that a 2 MeV Si + implant injects vacancies into the near surface region

  10. Radiative decay rates in Si crystallites with a donor ion

    Science.gov (United States)

    Derbenyova, Natalia V.; Burdov, Vladimir A.

    2018-04-01

    Within the framework of the time-dependent density functional theory, the radiative recombination rates have been calculated for small, ˜1 nm in diameter, hydrogen-passivated silicon crystallites with a single lithium or phosphorus ion. Sharp increase of the radiative recombination rates with increasing temperature was revealed for the crystallites with the lithium ion. No temperature effect was found for the crystallites with the ion of P. It was also shown that the presence of ionized donors in Si crystallites can substantially accelerate the radiative decay compared to the case of pure crystallites.

  11. Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

    International Nuclear Information System (INIS)

    Glasko, J.M.; Elliman, R.G.; Zou, J.; Cockayne, D.J.H.; Fitz Gerald, J.D.

    1998-01-01

    High energy (1 MeV), ion irradiation of GeSi/Si strained layers at elevated temperatures can cause strain relaxation. In this study, the effect of subsequent thermal annealing was investigated. Three distinct annealing stages were identified and correlated with the evolution of the defect microstructure. In the temperature range from 350 to 600 deg C, a gradual recovery of strain is observed. This is believed to result from the annealing of small defect clusters and the growth of voids. The voids are visible at annealing temperatures in excess of 600 deg C, consistent with an excess vacancy concentration in the irradiated alloy layer. The 600 to 750 deg C range is marked by pronounced maximal recovery of strain, and is correlated with the dissolution of faulted loops in the substrate. At temperatures in the range 750-1000 deg C, strain relaxation is observed and is correlated with the growth of intrinsic dislocations within the alloy layer. These dislocations nucleate at the alloy-substrate interface and grow within the alloy layer, towards the surface. (authors)

  12. Effect of Si ion irradiation on polycrystalline CdS thin film grown from novel photochemical deposition technique

    International Nuclear Information System (INIS)

    Soundeswaran, S.; Senthil Kumar, O.; Ramasamy, P.; Kabi Raj, D.; Avasthi, D.K.; Dhanasekaran, R.

    2005-01-01

    CdS thin films have been deposited from aqueous solution by photochemical reactions. The solution contains Cd(CH 3 COO) 2 and Na 2 S 2 O 3 , and pH is controlled in an acidic region by adding H 2 SO 4 . The solution is illuminated with light from a high-pressure mercury-arc lamp. CdS thin films are formed on a glass substrate by the heterogeneous nucleation and the deposited thin films have been subjected to high-energy Si ion irradiations. Si ion irradiation has been performed with an energy of 80 MeV at fluences of 1x10 11 , 1x10 12 , 1x10 13 and 1x10 14 ions/cm 2 using tandem pelletron accelerator. The irradiation-induced changes in CdS thin films are studied using XRD, Raman spectroscopy and photoluminescence. Broadening of the PL emission peak were observed with increasing irradiation fluence, which could be attributed to the band tailing effect of the Si ion irradiation. The lattice disorder takes place at high Si ion fluences

  13. Development of the integrated control system for the microwave ion source of the PEFP 100-MeV proton accelerator

    Science.gov (United States)

    Song, Young-Gi; Seol, Kyung-Tae; Jang, Ji-Ho; Kwon, Hyeok-Jung; Cho, Yong-Sub

    2012-07-01

    The Proton Engineering Frontier Project (PEFP) 20-MeV proton linear accelerator is currently operating at the Korea Atomic Energy Research Institute (KAERI). The ion source of the 100-MeV proton linac needs at least a 100-hour operation time. To meet the goal, we have developed a microwave ion source that uses no filament. For the ion source, a remote control system has been developed by using experimental physics and the industrial control system (EPICS) software framework. The control system consists of a versa module europa (VME) and EPICS-based embedded applications running on a VxWorks real-time operating system. The main purpose of the control system is to control and monitor the operational variables of the components remotely and to protect operators from radiation exposure and the components from critical problems during beam extraction. We successfully performed the operation test of the control system to confirm the degree of safety during the hardware performance.

  14. Synthesizing single-phase β-FeSi2 via ion beam irradiations of Fe/Si bilayers

    International Nuclear Information System (INIS)

    Milosavljevic, M.; Dhar, S.; Schaaf, P.; Bibic, N.; Lieb, K.P.

    2001-01-01

    This paper presents results on the direct synthesis of the β-FeSi 2 phase by ion beam mixing of Fe/Si bilayers with Xe ions. The influence of the substrate temperature, ion fluence and energy on the growth of this phase was investigated using Rutherford backscattering (RBS), X-ray diffraction (XRD) and conversion electron Moessbauer spectroscopy (CEMS). Complete growth of single-phase β-FeSi 2 was achieved by 205 keV Xe ion irradiation to a fluence of 2x10 16 ions/cm 2 at 600 deg. C. We propose a two-step reaction mechanism involving thermal and ion beam energy deposition

  15. Surface sputtering in high-dose Fe ion implanted Si

    International Nuclear Information System (INIS)

    Ishimaru, Manabu

    2007-01-01

    Microstructures and elemental distributions in high-dose Fe ion implanted Si were characterized by means of transmission electron microscopy and Rutherford backscattering spectroscopy. Single crystalline Si(0 0 1) substrates were implanted at 350 deg. C with 120 keV Fe ions to fluences ranging from 0.1 x 10 17 to 4.0 x 10 17 /cm 2 . Extensive damage induced by ion implantation was observed inside the substrate below 1.0 x 10 17 /cm 2 , while a continuous iron silicide layer was formed at 4.0 x 10 17 /cm 2 . It was found that the spatial distribution of Fe projectiles drastically changes at the fluence between 1.0 x 10 17 and 4.0 x 10 17 /cm 2 due to surface sputtering during implantation

  16. Irradiation effects of Ar cluster ion beams on Si substrates

    International Nuclear Information System (INIS)

    Ishii, Masahiro; Sugahara, Gaku; Takaoka, G.H.; Yamada, Isao

    1993-01-01

    Gas-cluster ion beams can be applied to new surface modification techniques such as surface cleaning, low damage sputtering and shallow junction formation. The effects of energetic Ar cluster impacts on solid surface were studied for cluster energies of 10-30keV. Irradiation effects were studied by RBS. For Si(111) substrates, irradiated with Ar ≥500 clusters to a dose of 1x10 15 ion/cm 2 at acceleration voltage 15kV, 2x10 14 atoms/cm 2 implanted Ar atoms were detected. In this case, the energy per cluster atom was smaller than 30eV; at this energy, no significant implantation occurs in the case of monomer ions. Ar cluster implantation into Si substrates occurred due to the high energy density irradiation. (author)

  17. Monte Carlo simulation of channeled and random profiles of heavy ions implanted in silicon at high energy (1.2 MeV)

    International Nuclear Information System (INIS)

    Mazzone, A.M.

    1987-01-01

    In order to study channeling effects and implants of heavy ions with energy of few MeV in silicon, ion distributions are calculated with a Monte Carlo method for axial [(001) axis], planar, and nominally random directions for As + and P + ions implanted into silicon with energies in the range 100 keV to 2 MeV. The calculation indicates an appreciable channeling at the higher energy only for the (001) axis and the (110) planes. For heavy ions with energy in the MeV range the subsidence of channeling into major channels and the disappearance of minor channels are shown

  18. In situ MeV ion beam analysis of ceramic surfaces modified by 100-400 keV ion irradiation

    International Nuclear Information System (INIS)

    Weber, W.J.; Yu, N.; Sickafus, K.E.

    1995-05-01

    This paper describes use of the in situ ion beam analysis facility developed at Los Alamos National Laboratory for the study of irradiation effects in ceramic materials. In this facility, an analytical beamline of 3 MV tandem accelerator and an irradiation bean-dine of 200 kV ion implanter are connected at 60 degrees to a common target chamber. This facility provides a fast, efficient, and quantitative measurement tool to monitor changes of composition and crystallinity of materials irradiated by 100-400 keV ions, through sequential measurement of backscattering events of MeV ions combined with ion channeling techniques. We will describe the details of the in situ ion beam analysis and ion irradiation and discuss some of the important issues and their solutions associated with the in situ experiment. These issues include (1) the selection of axial ion channeling direction for the measurement of radiation damage; (2) surface charging and charge collection for data acquisition; (3) surface sputtering during ion irradiation; (4) the effects of MeV analytical beam on the materials; and (5) the sample heating effect on ion beam analysis

  19. Light-Ion Production in the Interaction of 96 MeV Neutrons with Silicon

    International Nuclear Information System (INIS)

    Tippawan, U.; Dangtip, S.; Pomp, S.; Atac, A.; Bergenwall, B.; Blomgren, J.; Hildebrand, A.; Johansson, C.; Klug, J.; Mermod, P.; Oesterlund, M.; Nilsson, L.; Elmgren, K.; Olsson, N.; Jonsson, O.; Prokofiev, A.V.; Renberg, P.-U.; Nadel-Turonski, P.; Corcalciuc, V.; Watanabe, Y.

    2005-01-01

    Radiation effects induced by terrestrial cosmic rays in microelectronics, on board aircrafts as well as at sea level, have recently attracted much attention. The most important particle radiation is due to spallation neutrons, created in the atmosphere by cosmic-ray protons. When, e.g., an electronic memory circuit is exposed to neutron radiation, charged particles can be produced in a nuclear reaction. The charge released by ionization can cause a flip of the memory content in a bit, which is called a single-event upset (SEU). This induces no hardware damage to the circuit, but unwanted re-programming of memories, CPUs, etc., can have consequences for the reliability, and ultimately also for the safety of the system.Data on energy and angular distributions of the secondary particles produced by neutrons in silicon nuclei are essential input for analyses and calculation of SEU rate. In this work, double-differential cross sections of inclusive light-ion (p, d, t, 3He and α) production in silicon, induced by 96 MeV neutrons, are presented. Energy distributions are measured at eight laboratory angles from 20 deg. to 160 deg. in steps of 20 deg. Deduced energy-differential and production cross sections are reported as well. Experimental cross sections are compared to theoretical reaction model calculations and existing experimental data in the literature

  20. Strain buildup in GaAs due to 100 MeV Ag ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Shramana; Bhaumik, Sudipta; Panda, Jaya Kumar [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302 (India); Ojha, Sunil [Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Dhar, Achintya [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302 (India); Kabiraj, D. [Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Roy, Anushree, E-mail: anushree@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302 (India)

    2013-12-01

    The formation of strained layers and a non-monotonic evolution of strain in high energy (100 MeV) silver ion (Ag{sup 7+}) irradiated undoped semi-insulating GaAs are observed and analyzed using Raman scattering and high resolution X-ray diffraction (HRXRD) measurements. At low fluence, compressively strained layers are formed, whereas, with increase in fluence both compressive and tensile strains appear as observed from HRXRD measurements. Further, at low fluence, the change in compressive strain with increase in fluence is found to be sharper than what is observed at higher fluence, thereby suggesting a critical fluence value, beyond which there is a simultaneous generation and annihilation of vacancy type defects. The initial blue shift and subsequent relative red shift beyond above critical fluence in the Raman peak also qualitatively reveal non-monotonic evolution of strain in this case. Finally, we demonstrate the sensitivity of Raman spectroscopy in detecting the decrease in lattice ordering in the crystal in the low fluence regime, below the detection limit of Rutherford back-scattering channeling (c-RBS) measurements.

  1. Boron lattice location in room temperature ion implanted Si crystal

    International Nuclear Information System (INIS)

    Piro, A.M.; Romano, L.; Mirabella, S.; Grimaldi, M.G.

    2005-01-01

    The B lattice location in presence of a Si-self-interstitial (I Si ) supersaturation, controlled by energetic proton bombardment, has been studied by means of ion channelling and massive Monte Carlo simulations. B-doped layers of Si crystals with a B concentration of 1 x 10 2 B/cm 3 were grown by Molecular Beam Epitaxy. Point defect engineering techniques, with light energetic ion implants, have been applied to generate an I Si uniform injection in the electrically active layer. The displacement of B atoms out of substitutional lattice sites was induced by 650 keV proton irradiations at room temperature (R.T.) and the resultant defect configuration was investigated by ion channelling and Nuclear Reaction Analysis (NRA) techniques. Angular scans were measured both through and axes along the (1 0 0) plane using the 11 B(p,α) 8 Be nuclear reaction at 650 keV proton energy. Monte Carlo simulated angular scans were calculated considering a variety of theoretical defect configurations, supported by literature, and compared with experimental data. Our experimental scans can be fitted by a linear combination of small (0.3 A) and large B displacements (1.25 A) along the direction, compatible with the B-dumbbell oriented along as proposed by ab initio calculations

  2. Experimental and calculated effectiveness of a radiochromic dye film to stopping 21 MeV 7Li and 64 MeV 16O ions

    International Nuclear Information System (INIS)

    Olsen, K.J.; Hansen, J.W.

    1984-01-01

    Relative radiation effectiveness, RE, of 21 MeV 7 Li and 64 MeV 16 O ions being completely stopped in a tissue equivalent film dose meter has been measured as a function of penetration depth and energy, and the results have been compared with calculations based on a delta-ray theory for heavy charged particles developed by Katz et al. The experiment was designed to test calculations particularly in the Bragg-peak region of the slowing down particles where significant deviation between theory and experiment was found. Fitting of the characteristic D 37 dose and the size of the radiation sensitive element in the detector, which are important parameters in the theoretical model, does not improve the overall correlation between theory and experiment. It is concluded that disagreement between theoretical and experimental RE-values below 1.5 MeV/amu is partly due to lack of equivalence between the delta-ray spectrum and the slowing down spectrum of electrons from low-LET radiation, and partly from approximations in the calculated distribution of energy deposition of the delta-rays. (orig.)

  3. In situ study of the effects of heavy-ion irradiation on co-evaporated CoSi2 films

    International Nuclear Information System (INIS)

    Allen, C.W.; Smith, D.A.

    1990-11-01

    The in situ ion irradiation capability of Argonne's HVEM-Tandem User Facility has been employed to determine the effects of 1.5 MeV Kr + irradiation and 300 kV electron irradiation on the crystallization of as-deposited and of partially crystallized 40 nm thick films of CoSi 2 . Ion fluxes ranged from 8.5 x 10 14 to 6.8 x 10 15 m -2 s -1 for which beam heating effects may be neglected. The maximum electron flux at 300 kV was 0.8 x 10 23 m -2 s -1 . The maximum temperature at which crystalline CoSi 2 is amorphized by the ion irradiation of flux = 6.8 x 10 15 m -2 s -1 is between 250 and 280 K. At higher temperatures amorphous material crystallizes by growth of any preexisting crystals and by classical nucleation and growth, with radial growth rates which are proportional to ion flux. The average degree of transformation per ion is 4 x 10 -26 m 3 per ion. Thermally induced crystallization of as-deposited films occurs above approximately 420 K. For ion doses at least as low as 3.4 x 10 16 m -2 ion irradiation at 300 K promotes thermal crystallization at 450 K, by virtue of enhanced apparant nucleation and at large doses, by enhanced growth rate. 8 refs., 2 figs

  4. TOTAL NUCLEAR-REACTION PROBABILITY OF 270 TO 390 N-14 IONS IN SI AND CSI

    NARCIS (Netherlands)

    WARNER, RE; CARPENTER, CL; FETTER, JM; WAITE, WF; WILSCHUT, HW; HOOGDUIN, JM

    A magnetic spectrograph and position-sensitive detectors were used to measure the total nuclear reaction probability eta(R) for alpha + CsI at 116 MeV, N-14 + CsI at 265 and 385 MeV, and N-14 + Si at 271 and 390 MeV. From these eta(R)'s, average reaction cross sections sigma(R) were deduced for

  5. EPR and cathodoluminescence of defects in diamond irradiated by nickel ions with energy of 335 MeV

    International Nuclear Information System (INIS)

    Varichenko, V.S.; Martinovich, V.A.; Filipp, A.Z.; Didyk, A.Yu.

    1995-01-01

    Defect production in natural diamond irradiated by 335 MeV Ni ions within a dose range of 5·10 12 - 5·10 14 cm -2 has been studied by EPR and cathodoluminescence techniques. It is shown that the high energy ion irradiation leads to the appearance of modified track like one-dimensional structures with nontetrahedral coordination of atoms. A mechanism of microwave conductivity in modified structures of irradiated samples discussed in frame of a model of mobile quasi-particles of corresponding paramagnetic centres. Peculiarities of concentration distributions of paramagnetic centres corresponding to ion-modified structures and cathodoluminescence centres through the irradiated layer are connected with track channeling and stopped of a part of ions because of their elastic collisions with lattice atoms during ion stopping. (author). 18 refs., 5 figs

  6. Irradiation of 4H-SiC UV detectors with heavy ions

    International Nuclear Information System (INIS)

    Kalinina, E. V.; Lebedev, A. A.; Bogdanova, E.; Berenquier, B.; Ottaviani, L.; Violina, G. N.; Skuratov, V. A.

    2015-01-01

    Ultraviolet (UV) photodetectors based on Schottky barriers to 4H-SiC are formed on lightly doped n-type epitaxial layers grown by the chemical vapor deposition method on commercial substrates. The diode structures are irradiated at 25°C by 167-MeV Xe ions with a mass of 131 amu at a fluence of 6 × 10 9 cm −2 . Comparative studies of the optical and electrical properties of as-grown and irradiated structures with Schottky barriers are carried out in the temperature range 23–180°C. The specific features of changes in the photosensitivity and electrical characteristics of the detector structures are accounted for by the capture of photogenerated carriers into traps formed due to fluctuations of the conduction-band bottom and valence-band top, with subsequent thermal dissociation

  7. Modification of structural and magnetic properties of soft magnetic multi-component metallic glass by 80 MeV {sup 16}O{sup 6+} ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Kane, S.N., E-mail: kane_sn@yahoo.com [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Shah, M.; Satalkar, M.; Gehlot, K. [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Kulriya, P.K.; Avasthi, D.K. [Inter-University Accelerator Centre, P.O. Box No. 10502, Aruna Asaf Ali Marg, New Delhi 110067 (India); Sinha, A.K. [Raja Ramanna Centre for Advanced Technology, P.O. CAT, Indore 452013 (India); Modak, S.S. [Physics Department, Jaypee University of Eng. & Tech., A-B Road, Raghogarh, Guna 473226 (India); Ghodke, N.L.; Reddy, V.R. [UGC-DAE CSR, University Campus, Khandwa Road, Indore 452001 (India); Varga, L.K. [RISSPO, Hungarian Academy of Sciences, P.O. Box 49, 1525 Budapest (Hungary)

    2016-07-15

    Effect of 80 MeV {sup 16}O{sup 6+} ion irradiation in amorphous Fe{sub 77}P{sub 8}Si{sub 3}C{sub 5}Al{sub 2}Ga{sub 1}B{sub 4} alloy is reported. Electronic energy loss induced modifications in the structural and, magnetic properties were monitored by synchrotron X-ray diffraction (SXRD), Mössbauer and, magnetic measurements. Broad amorphous hump seen in SXRD patterns reveals the amorphous nature of the studied specimens. Mössbauer measurements suggest that: (a) alignment of atomic spins within ribbon plane, (b) changes in average hyperfine field suggests radiation-induced decrease in the inter atomic distance around Mössbauer (Fe) atom, (c) hyperfine field distribution confirms the presence of non-magnetic elements (e.g. – B, P, C) in the first near-neighbor shell of the Fe atom, thus reducing its magnetic moment, and (d) changes in isomer shift suggests variation in average number of the metalloid near neighbors and their distances. Minor changes in soft magnetic behavior – watt loss and, coercivity after an irradiation dose of 2 × 10{sup 13} ions/cm{sup 2} suggests prospective application of Fe{sub 77}P{sub 8}Si{sub 3}C{sub 5}Al{sub 2}Ga{sub 1}B{sub 4} alloy as core material in accelerators (radio frequency cavities).

  8. Photoluminescence and photoluminescence excitation studies in 80 MeV Ni ion irradiated MOCVD grown GaN

    Energy Technology Data Exchange (ETDEWEB)

    Devaraju, G. [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Pathak, A.P., E-mail: appsp@uohyd.ernet.in [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Srinivasa Rao, N.; Saikiran, V. [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Enrichi, Francesco [Coordinamento Interuniversitario Veneto per le Nanotecnologie (CIVEN), via delle Industrie 5, Marghera, I-30175Venice (Italy); Trave, Enrico [Dipartimento di Chimica Fisica, Universita Ca' Foscari Venezia, Dorsoduro 2137, I-30123 Venice (Italy)

    2011-09-01

    Highlights: {yields} MOCVD grown GaN samples are irradiated with 80 MeV Ni ions at room temperature. {yields} PL and PLE studies have been carried out for band to band, BL and YL emissions. {yields} Ni ions irradiated GaN shows BL band at 450 nm besides YL band. {yields} Radiation annealed Ga vacancies have quenching effect on YL intensity. {yields} We speculated that BL and YL are associated with N and Ga vacancies, respectively. - Abstract: We report damage creation and annihilation under energetic ion bombardment at a fixed fluence. MOCVD grown GaN thin films were irradiated with 80 MeV Ni ions at a fluence of 1 x 10{sup 13} ions/cm{sup 2}. Irradiated GaN thin films were subjected to rapid thermal annealing for 60 s in nitrogen atmosphere to anneal out the defects. The effects of defects on luminescence were explored with photoluminescence measurements. Room temperature photoluminescence spectra from pristine sample revealed presence of band to band transition besides unwanted yellow luminescence. Irradiated GaN does not show any band to band transition but there is a strong peak at 450 nm which is attributed to ion induced defect blue luminescence. However, irradiated and subsequently annealed samples show improved band to band transitions and a significant decrease in yellow luminescence intensity due to annihilation of defects which were created during irradiation. Irradiation induced effects on yellow and blue emissions are discussed.

  9. Formation of light-emitting nanostructures in layers of stoichiometric SiO{sub 2} irradiated with swift heavy ions

    Energy Technology Data Exchange (ETDEWEB)

    Kachurin, G. A., E-mail: kachurin@isp.nsc.ru; Cherkova, S. G. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics (Russian Federation); Skuratov, V. A. [Joint Institute for Nuclear Research (Russian Federation); Marin, D. V.; Kesler, V. G.; Volodin, V. A. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics (Russian Federation)

    2011-10-15

    Thermally grown SiO{sub 2} layers have been irradiated with 700-MeV Bi ions with doses of (3-10) Multiplication-Sign 10{sup 12} cm{sup -2}. It is found that, even after a dose of 3 Multiplication-Sign 10{sup 12} cm{sup -2}, a photoluminescence band in the region of 600 nm appears. Its intensity levels off at a dose of {approx}5 Multiplication-Sign 10{sup 12} cm{sup -2}. The nature of the emission centers is studied by the methods of infrared transmission, Raman scattering, X-ray photoelectron spectroscopy, ellipsometry, and the reaction to passivating low-temperature anneals. It is established that irradiation brings about a decrease in the number of Si-O bonds with a relevant increase in the Si-Si bonds. It is assumed that the photoluminescence is caused by nanostructures containing an excess Si and/or having a deficit of O. The reaction of reduction of SiO{sub 2} proceeds in ion tracks due to high levels of ionization and heating within these tracks. The dose dependence is used to estimate the diameter of a track at 8-9 nm.

  10. Formation of light-emitting nanostructures in layers of stoichiometric SiO2 irradiated with swift heavy ions

    International Nuclear Information System (INIS)

    Kachurin, G. A.; Cherkova, S. G.; Skuratov, V. A.; Marin, D. V.; Kesler, V. G.; Volodin, V. A.

    2011-01-01

    Thermally grown SiO 2 layers have been irradiated with 700-MeV Bi ions with doses of (3–10) × 10 12 cm −2 . It is found that, even after a dose of 3 × 10 12 cm −2 , a photoluminescence band in the region of 600 nm appears. Its intensity levels off at a dose of ∼5 × 10 12 cm −2 . The nature of the emission centers is studied by the methods of infrared transmission, Raman scattering, X-ray photoelectron spectroscopy, ellipsometry, and the reaction to passivating low-temperature anneals. It is established that irradiation brings about a decrease in the number of Si-O bonds with a relevant increase in the Si-Si bonds. It is assumed that the photoluminescence is caused by nanostructures containing an excess Si and/or having a deficit of O. The reaction of reduction of SiO 2 proceeds in ion tracks due to high levels of ionization and heating within these tracks. The dose dependence is used to estimate the diameter of a track at 8–9 nm.

  11. Charge-state distributions of 100, 175, 275, and 352 MeV gold ions emerging from thin carbon foils

    International Nuclear Information System (INIS)

    Martin, J.A.; Auble, R.L.; Erb, K.A.; Jones, C.M.; Olsen, D.K.

    1985-01-01

    These measurements were undertaken as a consequence of our failure early this year to accelerate Au +46 ions in the Oak Ridge Isochronous Cyclotron using an injected beam of 352 MeV 197 Au +17 from the 25 MV tandem accelerator. Following that unsuccessful test, we made a preliminary measurement of the charge-state distribution of 352 MeV 197 Au ions emerging from a carbon foil using the bending magnet that is a part of the cyclotron beam injection system. The measured mean charge was approx.38.5, about 4.5 charge-states lower than predicted by the Sayer semi-empirical formula. The measurements reported here were done more precisely and systematically confirm that preliminary result. 12 refs., 5 figs., 4 tabs

  12. Charge-state distributions of 100, 175, 275, and 352 MeV gold ions emerging from thin carbon foils

    Energy Technology Data Exchange (ETDEWEB)

    Martin, J.A.; Auble, R.L.; Erb, K.A.; Jones, C.M.; Olsen, D.K.

    1985-01-01

    These measurements were undertaken as a consequence of our failure early this year to accelerate Au/sup +46/ ions in the Oak Ridge Isochronous Cyclotron using an injected beam of 352 MeV /sup 197/Au/sup +17/ from the 25 MV tandem accelerator. Following that unsuccessful test, we made a preliminary measurement of the charge-state distribution of 352 MeV /sup 197/Au ions emerging from a carbon foil using the bending magnet that is a part of the cyclotron beam injection system. The measured mean charge was approx.38.5, about 4.5 charge-states lower than predicted by the Sayer semi-empirical formula. The measurements reported here were done more precisely and systematically confirm that preliminary result. 12 refs., 5 figs., 4 tabs.

  13. Ion beam mixing of marker layers in Al and Si

    International Nuclear Information System (INIS)

    Mantl, S.; Rehn, L.E.; Averback, R.S.; Thompson, L.J. Jr.

    1984-07-01

    Ion beam mixing experiments on thin Pt, Au, and Ni markers in Al and Si have performed at 17, 85, and 300 K. After irradiation with 300-keV Ar ions the broadening and relative shifts of the markers have been determined by RBS measurements. The marker broadenings are more pronounced in Si than in Al; in both matrices the broadenings decrease in the following order: Au, Pt, and Ni. No dependence of mixing on irradiation temperature was observed between 17 and 300 K. The shifts of the heavy Au and Pt markers relative to the Ni markers are approximately equal to the experimental accuracy. However, a shift of the Ni marker toward the surface relative to the heavier Au and Pt markers was consistently observed. 13 references, 2 figures

  14. Dopant profile engineering of advanced Si MOSFET's using ion implantation

    International Nuclear Information System (INIS)

    Stolk, P.A.; Ponomarev, Y.V.; Schmitz, J.; Brandenburg, A.C.M.C. van; Roes, R.; Montree, A.H.; Woerlee, P.H.

    1999-01-01

    Ion implantation has been used to realize non-uniform, steep retrograde (SR) dopant profiles in the active channel region of advanced Si MOSFET's. After defining the transistor configuration, SR profiles were formed by dopant implantation through the polycrystalline Si gate and the gate oxide (through-the-gate, TG, implantation). The steep nature of the as-implanted profile was retained by applying rapid thermal annealing for dopant activation and implantation damage removal. For NMOS transistors, TG implantation of B yields improved transistor performance through increased carrier mobility, reduced junction capacitances, and reduced susceptibility to short-channel effects. Electrical measurements show that the gate oxide quality is not deteriorated by the ion-induced damage, demonstrating that transistor reliability is preserved. For PMOS transistors, TG implantation of P or As leads to unacceptable source/drain junction broadening as a result of transient enhanced dopant diffusion during thermal activation

  15. Stripping of 1.04 MeV per nucleon krypton ions in high molecular weight vapours

    International Nuclear Information System (INIS)

    Eastham, D.A.; Joy, T.; Clark, R.B.; King, R.

    1976-01-01

    Equilibrium charge state distributions have been measured for 1.04 MeV per nucleon krypton ions in heavy vapours with molecular weights from 462 to 6500. Non-equilibrium data are presented for the heaviest vapour. A maximum increase of 0.8 in the mean charge is found relative to a conventional diatomic gas but the pressures required are two orders of magnitude less. (Auth.)

  16. Swift heavy ion irradiation effects in SiC measured by positrons

    Energy Technology Data Exchange (ETDEWEB)

    Liszkay, L.; Kajcsos, Zs.; Szilagyi, E. [KFKI Research Inst. for Nuclear and Particle Physics, Budapest (Hungary); Havancsak, K. [Dept. for Solid State Physics, Eoetvoes Univ., Budapest (Hungary); Barthe, M.F.; Desgardin, P.; Henry, L. [CNRS Centre d' Etudes et de Recherches par Irradiation, Orleans (France); Battistig, G. [Research Inst. for Technical Physics and Materials Science, Budapest (Hungary); Skuratov, V.A. [Joint Inst. of Nuclear Research, Moscow (Russian Federation). Bogoliubov Lab. of Theoretical Physics

    2001-07-01

    N-type 6H SiC single crystals irradiated with swift (246 MeV) Kr ions at room temperature (the implantation depth being 21 {mu}m) were investigated by conventional positron lifetime and Doppler-broadening measurements as well as with the application of a slow positron beam. The fluence dependence of the irradiation-induced defects was studied in the 1 x 10{sup 10} - 1 x 10{sup 14} ion cm{sup -2} range. In the fluence and depth range studied, no sign of amorphization (or creation of large voids) was seen in the Kr irradiated crystals. The positron annihilation results were compared with atomic displacement calculations by TRIM. A simple model was used to describe the trapping effect and determine the relationship between the atomic displacement densities and the positron trapping. The 225 ps lifetime of the open-volume defects created suggests that the V{sub Si}-V{sub C} divacancy is the dominant trapping site in the implanted zone. (orig.)

  17. Nonlinear optical waveguides produced by MeV ion implantation in LiNbO3

    International Nuclear Information System (INIS)

    Sarkisov, S.S.; Curley, M.J.; Williams, E.K.; Ila, D.; Svetchnikov, V.L.; Zandbergen, H.W.; Zykov, G.A.; Banks, C.; Wang, J.-C.; Poker, D.B.; Hensley, D.K.

    2000-01-01

    We analyze microstructure, linear and nonlinear optical properties of planar waveguides produced by implantation of MeV Ag ions into LiNbO 3 . Linear optical properties are described by the parameters of waveguide propagation modes and optical absorption spectra. Nonlinear properties are described by the nonlinear refractive index. Operation of the implanted crystal as an optical waveguide is due to modification of the linear refractive index of the implanted region. The samples as implanted do not show any light-guiding. The implanted region has amorphous and porous microstructure with the refractive index lower than the substrate. Heat treatment of the implanted samples produces planar light-guiding layer near the implanted surface. High-resolution electron microscopy reveals re-crystallization of the host between the surface and the nuclear stopping region in the form of randomly oriented crystalline grains. They make up a light-guiding layer isolated from the bulk crystal by the nuclear stopping layer with low refractive index. Optical absorption of the sample as implanted has a peak at 430 nm. This peak is due to the surface plasmon resonance in nano-clusters of metallic silver. Heat treatment of the samples shifts the absorption peak to 545 nm. This is more likely due to the increase of the refractive index back to the value for the crystalline LiNbO 3 . The nonlinear refractive index of the samples at 532 nm (of the order of 10 -10 cm 2 W -1 ) was measured with the Z-scan technique using a picosecond laser source. Possible applications of the waveguides include ultra-fast photonic switches and modulators

  18. Channeling effect for low energy ion implantation in Si

    International Nuclear Information System (INIS)

    Cho, K.; Allen, W.R.; Finstad, T.G.; Chu, W.K.; Liu, J.; Wortman, J.J.

    1985-01-01

    Ion implantation is one of the most important processes in semiconductor device fabrication. Due to the crystalline nature of Si, channeling of implanted ions occurs during this process. Modern devices become smaller and shallower and therefore require ion implantation at lower energies. The effect of channeling on ion implantation becomes a significant problem for low energy ion implantation. The critical angle for axial and planar channeling increases with decreasing energy. This corresponds to an increased probability for channeling with lowering of ion energy. The industry approach to avoid the channeling problem is to employ a tilt angle of 7 0 between the ion implantation direction and the surface normal. We approach the problem by mapping major crystalline axes and planes near the [100] surface normal. Our analysis indicates that a 7 0 tilt is not an optimum selection in channeling reduction. Tilt angles in the range 5 0 to 6 0 combined with 7 0 +- 0.5 0 rotation from the (100) plane are better selections for the reduction of the channeling effect. The range of suitable angles is a function of the implantation energy. Implantations of boron along well specified crystallographic directions have been carried out by careful alignment and the resulting boron profiles measured by SIMS. (orig.)

  19. Activation characteristics of ion-implanted Si+ in AlGaN

    International Nuclear Information System (INIS)

    Irokawa, Y.; Fujishima, O.; Kachi, T.; Pearton, S.J.; Ren, F.

    2005-01-01

    Multiple-energy Si + implantation in the range 30-360 keV into Al 0.13 Ga 0.87 N for n-type doping was carried out at room temperature, followed by annealing at 1150-1375 deg. C for 5 min. Activation efficiencies close to 100% were obtained for ion doses of 1.0x10 15 cm -2 after annealing at 1375 deg. C, with a resulting sheet resistance of 74 Ω/square. By sharp contrast, the activation efficiency at 1150 deg. C was only 4% for this dose, with a sheet resistance of 1.63x10 4 Ω/square. The activation efficiency was also a function of dose, with a maximum activation percentage of only 55% for lower doses of 1.0x10 14 cm -2 annealed at 1375 deg. C. This is due to the comparatively larger effect of compensating acceptors at the lower dose and is also lower than the corresponding activation of Si in pure GaN under these conditions (78%). The measurement temperature dependence of sheet carrier density showed an activation energy of 23 meV, consistent with the ionization energy of Si in AlGaN

  20. The effect of composition on the formation of light-emitting Si nanostructures in SiO{sub x} layers on irradiation with swift heavy ions

    Energy Technology Data Exchange (ETDEWEB)

    Kachurin, G. A., E-mail: kachurin@isp.nsc.ru; Cherkova, S. G.; Marin, D. V.; Kesler, V. G. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Skuratov, V. A. [Joint Institute for Nuclear Research (Russian Federation); Cherkov, A. G. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2011-03-15

    The SiO{sub x} layers different in composition (0 < x < 2) are irradiated with Xe ions with the energy 167 MeV and the dose 10{sup 14} cm{sup -2} to stimulate the formation of light-emitting Si nanostructures. The irradiation gives rise to a photoluminescence band with the parameters dependent on x. As the Si content is increased, the photoluminescence is first enhanced, with the peak remaining arranged near the wavelength {lambda} Almost-Equal-To 600 nm, and then the peak shifts to {lambda} Almost-Equal-To 800 nm. It is concluded that the emission sources are quantum-confined nanoprecipitates formed by disproportionation of SiO{sub x} in ion tracks due to profound ionization losses. Changes in the photoluminescence spectrum with increasing x are attributed firstly to the increase in the probability of formation of nanoprecipitates and then to the increase in their dimensions; the latter effect is accompanied with a shift of the emission band to longer wavelengths. The subsequent quenching of photoluminescence is interpreted as a result of the removal of quantum confinement in nanoprecipitates and their coagulation.

  1. Electron angular distributions in He single ionization impact by H2+ ions at 1 MeV

    International Nuclear Information System (INIS)

    Zhang Shaofeng; Ma Xinwen; Suske, J; Fischer, D; Kuehnel, K U; Voitkiv, A; Najjaril, B; Krauss, A; Moshammer, R; Ullrich, J; Hagmann, S

    2009-01-01

    For the first time we investigated in a kinematically complete experiment the ionization of helium in collisions with H 2 + -molecular ions at 1 MeV. Using two separate detectors, the orientation of the projectile H 2 + -molecular ions was determined at the instance of the collision. The electron angular distribution was measured by a R eaction Microscope . The observed structures are found in agreement with theoretical calculations, indicating that the ionized electron of He shows a slight preferential emission direction parallel to the molecular axis.

  2. Dose as a function of radial distance from a 930 MeV 4He ion beam

    International Nuclear Information System (INIS)

    Varma, M.N.; Paretzke, H.; Baum, J.W.; Lyman, J.T.; Howard, J.

    1975-01-01

    A unique mesh wall ionization chamber (approximating a wall-less ionization chamber) was used to measure dose as a function of radial distance from a 930 MeV 4 He ion beam in air. Measurements were made at distances from about 10 to 40 cm from the ion path. This represents simulated distances of approximately 102 to 404 μm in tissue having a density of 1 g/cm 3 . Experimental values are compared with theoretical calculations, and probable causes of differences found are discussed. (auth)

  3. 120 MeV Ni Ion beam induced modifications in poly (ethylene terephthalate) used in commercial bottled water

    International Nuclear Information System (INIS)

    Kumar, Vijay; Sonkawade, R. G.; Ali, Yasir; Dhaliwal, A. S.

    2012-01-01

    We report the effects of heavy ion irradiation on the optical, structural, and chemical properties of polyethylene terephthalate (PET) film used in commercial bottled water. PET bottles were exposed with 120 MeV Ni ions at fluences varying from 3 x 10 10 to 3 x 10 12 ion/cm 2 . The modifications so induced were analyzed by using UV-Vis, X-ray diffraction (XRD) and Fourier Transform Infrared (FTIR) spectroscopy. Substantial decrease in optical band gap is observed with the increase in ion fluence. In the FTIR spectra, most of bands are decreased due the degradation of the molecular structure. XRD measurements show the decrease in peak intensity, which reflects the loss of crystallinity after irradiation.

  4. Ion-source dependence of the distributions of internuclear separations in 2-MeV HeH+ beams

    International Nuclear Information System (INIS)

    Kanter, E.P.; Gemmell, D.S.; Plesser, I.; Vager, Z.

    1981-01-01

    Experiments involving the use of MeV molecular-ion beams have yielded new information on atomic collisions in solids. A central part of the analyses of such experiments is a knowledge of the distribution of internuclear separations contained in the incident beam. In an attempt to determine how these distributions depend on ion-source gas conditions, we have studied foil-induced dissociations of H 2+ , H 3+ , HeH + , and OH 2+ ions. Although changes of ion-source gas compositions and pressure were found to have no measurable influence on the vibrational state populations of the beams reaching our target, for HeH + we found that beams produced in our rf source were vibrationally hotter than beams produced in a duoplasmatron. This was also seen in studies of neutral fragments and transmitted molecules

  5. Optical, structural, and chemical properties of CR-39 implanted with 5.2 MeV doubly charged carbon ions

    Science.gov (United States)

    Ali, Dilawar; Butt, M. Z.; Ishtiaq, Mohsin; Waqas Khaliq, M.; Bashir, Farooq

    2016-11-01

    Poly-allyl-diglycol-carbonate (CR-39) specimens were irradiated with 5.2 MeV doubly charged carbon ions using Pelletron accelerator. Ion dose was varied from 5 × 1013 to 5 × 1015 ions cm-2. Optical, structural, and chemical properties were investigated by UV-vis spectroscopy, x-ray diffractometer, and FTIR/Raman spectroscopy, respectively. It was found that optical absorption increases with increasing ion dose. Absorption edge shifts from UV region to visible region. The measured opacity values of pristine and ion implanted CR-39 range from 0.0519 to 4.7959 mm-1 following an exponential growth (9141%) with the increase in ion dose. The values of direct and indirect band gap energy decrease exponentially with an increase in ion dose by 59% and 71%, respectively. However, average refractive index in the visible region increases from 1.443 to 2.864 with an increase in ion dose, by 98%. A linear relation between band gap energy and crystallite size was observed. Both the number of carbon atoms in conjugation length and the number of carbon atoms per cluster increase linearly with the increase in ion dose. FTIR spectra showed that on C+2 ions irradiation, the intensity of all bands decreases gradually without appearance of any new band, indicating degradation of polymer after irradiation. Raman spectra revealed that the density of -CH2- group decreases on C+2 ions irradiation. However, the structure of CR-39 is completely destroyed on irradiation with ion dose 1 × 1015 and 5 × 1015 ions cm-2.

  6. Heteroepitaxy of zinc-blende SiC nano-dots on Si substrate by organometallic ion beam

    International Nuclear Information System (INIS)

    Matsumoto, T.; Kiuchi, M.; Sugimoto, S.; Goto, S.

    2006-01-01

    The self-assembled SiC nano-dots were fabricated on Si(111) substrate at low-temperatures using the organometallic ion beam deposition technique. The single precursor of methylsilicenium ions (SiCH 3 + ) with the energy of 100 eV was deposited on Si(111) substrate at 500, 550 and 600 deg. C. The characteristics of the self-assembled SiC nano-dots were analyzed by reflection high-energy electron diffraction (RHEED), Raman spectroscopy and atomic force microscope (AFM). The RHEED patterns showed that the crystal structure of the SiC nano-dots formed on Si(111) substrate was zinc-blende SiC (3C-SiC) and it was heteroepitaxy. The self-assembled SiC nano-dots were like a dome in shape, and their sizes were the length of 200-300 nm and the height of 10-15 nm. Despite the low-temperature of 500 deg. C as SiC crystallization the heteroepitaxial SiC nano-dots were fabricated on Si(111) substrate using the organometallic ion beam

  7. Impurities-Si interstitials interaction in Si doped with B or Ga during ion irradiation

    International Nuclear Information System (INIS)

    Romano, L; Piro, A M; Grimaldi, M G; Rimini, E

    2005-01-01

    Substitutional impurities (B, Ga) in Si experienced an off-lattice displacement during ion-irradiation using a H + or He + beam at room temperature in random incidence. Samples were prepared by solid phase epitaxy (SPE) of pre-amorphized Si subsequently implanted with B and Ga at a concentration of about 1 x10 20 at.cm -3 confined in a 300 nm thick surface region. The lattice location of impurities was performed by a channelling technique along different axes ( , ) using the 11 B(p,α) 8 Be reaction and standard RBS for B and Ga, respectively. The normalized channelling yield χ of the impurity signal increases with the ion fluence, indicating a progressive off-lattice displacement of the dopant during irradiation in random incidence, until it saturates at χ F I ) generated by the impinging beam in the doped region

  8. On the use of thin ion implanted Si detectors in heavy ion experiments

    International Nuclear Information System (INIS)

    Lavergne-Gosselin, L.; Stab, L.; Lampert, M.O.

    1988-10-01

    We present test results on the use of thin ion implanted epitaxial Si detectors for registration of low- and medium energy heavy fragments in nuclear reactions. A linear energy response for very low energy nuclei has been observed. A test of 10 μm + 300 μm telescopes under realistic experimental conditions for heavy ion experiments exhibits the possibilities to use these detectors for the measurements of multifragmentation products. (authors)

  9. CaO-Al2O3 glass-ceramic as a joining material for SiC based components: A microstructural study of the effect of Si-ion irradiation

    Science.gov (United States)

    Casalegno, Valentina; Kondo, Sosuke; Hinoki, Tatsuya; Salvo, Milena; Czyrska-Filemonowicz, Aleksandra; Moskalewicz, Tomasz; Katoh, Yutai; Ferraris, Monica

    2018-04-01

    The aim of this work was to investigate and discuss the microstructure and interface reaction of a calcia-alumina based glass-ceramic (CA) with SiC. CA has been used for several years as a glass-ceramic for pressure-less joining of SiC based components. In the present work, the crystalline phases in the CA glass-ceramic and at the CA/SiC interface were investigated and the absence of any detectable amorphous phase was assessed. In order to provide a better understanding of the effect of irradiation on the joining material and on the joints, Si ion irradiation was performed both on bulk CA and CA joined SiC. CA glass-ceramic and CA joined SiC were both irradiated with 5.1 MeV Si2+ ions to 3.3 × 1020 ions/m2 at temperatures of 400 and 800 °C at DuET facility, Kyoto University. This corresponds to a damage level of 5 dpa for SiC averaged over the damage range. This paper presents the results of a microstructural analysis of the irradiated samples as well as an evaluation of the dimensional stability of the CA glass-ceramic and its irradiation temperature and/or damage dependence.

  10. Effect of 1.2 MeV argon ions irradiation on magnetic properties of ZnO

    International Nuclear Information System (INIS)

    Mishra, D.K.; Mohapatra, Jyoshnarani; Mahato, Banashree; Kumar, P.; Mitra, Amitav; Singh, S.K.; Kanjilal, D.

    2013-01-01

    Room temperature ferromagnetism in 1.2 MeV argon ions irradiated polycrystalline ZnO has been observed. The magnetic contribution in form of saturation magnetization is higher in sample irradiated with ion fluence of 1 × 10 15 ions/cm 2 . However, annealing of the defects at higher fluences of 5 × 10 15 ions/cm 2 reduce the magnetic contribution in comparison to the magnetic contribution of the lower fluences. The X-ray diffraction reveals that the degree of crystallinity decreases with the increase of ion fluences upto 1 × 10 15 ions/cm 2 and further it increases at a fluence of 5 × 10 15 ions/cm 2 . The inhomogeneous arrangement of grains and changes in their sizes with increasing ion fluences decrease the magnetic ordering of the system. The electron probe microstructure analyses and micro-Raman spectra of irradiated samples show in-homogeneity in zinc and oxygen ratio which is one of the causes to show ferromagnetism.

  11. Synthesis and characterization of ion-implanted Pt nanocrystals in SiO2

    International Nuclear Information System (INIS)

    Giulian, R.; Kluth, P.; Johannessen, B.; Araujo, L.L.; Llewellyn, D.J.; Cookson, D.J.; Ridgway, M.C.

    2007-01-01

    Pt nanocrystals (NCs) produced by ion implantation in SiO 2 films were investigated by Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM) and small angle X-ray scattering (SAXS). The implantations were performed at liquid nitrogen temperature using energies between 3.4 and 5.6 MeV and an ion fluence range of 2-30 x 10 16 cm -2 and were followed by annealing in forming gas (95% N 2 , 5% H 2 ) for one hour at temperatures between 500 and 1100 deg. C. TEM analysis revealed that the NCs are spherical in shape. The mean size of the NCs annealed at 1100 deg. C varied between 2.8 and 3.6 nm for the highest and lowest fluences, respectively, as determined with both TEM and SAXS. In contrast to previous studies on ion implanted metal NCs, larger Pt NCs are located far beyond the Pt peak concentration, potentially the result of a strongly defect mediated NC nucleation

  12. Marker experiments in growth studies of Ni2Si, Pd2Si, and CrSi2 formed both by thermal annealing and by ion mixing

    International Nuclear Information System (INIS)

    Hung, L.S.; Mayer, J.W.; Pai, C.S.; Lau, S.S.

    1985-01-01

    Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni 2 Si, while Si is the diffusing species in CrSi 2 . In Pd 2 Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems

  13. Depth distribution of Frank loop defects formed in ion-irradiated stainless steel and its dependence on Si addition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Dongyue, E-mail: dychen@safety.n.t.u-tokyo.ac.jp [The University of Tokyo, Department of Nuclear Engineering and Management, School of Engineering, 7-3-1 Hongo Bunkyo-ku, Tokyo 113-8656 (Japan); Murakami, Kenta [The University of Tokyo, Nuclear Professional School, School of Engineering, 2-22 Shirakata-Shirane, Tokai-mura, Ibaraki 319-1188 (Japan); Dohi, Kenji; Nishida, Kenji; Soneda, Naoki [Central Research Institute of Electric Power Industry, 2-11-1 Iwado-kita, Komae, Tokyo 201-8511 (Japan); Li, Zhengcao, E-mail: zcli@tsinghua.edu.cn [Tsinghua University, School of Materials Science and Engineering, Beijing 100084 (China); Liu, Li; Sekimura, Naoto [The University of Tokyo, Department of Nuclear Engineering and Management, School of Engineering, 7-3-1 Hongo Bunkyo-ku, Tokyo 113-8656 (Japan)

    2015-12-15

    Although heavy ion irradiation is a good tool to simulate neutron irradiation-induced damages in light water reactor, it produces inhomogeneous defect distribution. Such difference in defect distribution brings difficulty in comparing the microstructure evolution and mechanical degradation between neutron and heavy ion irradiation, and thus needs to be understood. Stainless steel is the typical structural material used in reactor core, and could be taken as an example to study the inhomogeneous defect depth distribution in heavy ion irradiation and its influence on the tested irradiation hardening by nano-indentation. In this work, solution annealed stainless steel model alloys are irradiated by 3 MeV Fe{sup 2+} ions at 400 °C to 3 dpa to produce Frank loops that are mainly interstitial in nature. The silicon content of the model alloys is also tuned to change point defect diffusion, so that the loop depth distribution influenced by diffusion along the irradiation beam direction could be discussed. Results show that in low Si (0% Si) and base Si (0.42% Si) samples the depth distribution of Frank loop density quite well matches the dpa profile calculated by the SRIM code, but in high Si sample (0.95% Si), the loop number density in the near-surface region is very low. One possible explanation could be Si’s role in enhancing the effective vacancy diffusivity, promoting recombination and thus suppressing interstitial Frank loops, especially in the near-surface region, where vacancies concentrate. By considering the loop depth distribution, the tested irradiation hardening is successfully explained by the Orowan model. A hardening coefficient of around 0.30 is obtained for all the three samples. This attempt in interpreting hardening results may make it easier to compare the mechanical degradation between different irradiation experiments.

  14. Transformation of sludge Si to nano-Si/SiOx structure by oxygen inward diffusion as precursor for high performance anodes in lithium ion batteries

    Science.gov (United States)

    Hua, Qiqi; Dai, Dongyang; Zhang, Chengzhi; Han, Fei; Lv, Tiezheng; Li, Xiaoshan; Wang, Shijie; Zhu, Rui; Liao, Haojie; Zhang, Shiguo

    2018-05-01

    Although several Si/C composite structures have been proposed for high-performance lithium-ion batteries (LIBs), they have still suffered from expensive and complex processes of nano-Si production. Herein, a simple, controllable oxygen inward diffusion was utilized to transform Si sludge obtained from the photovoltaic (PV) industry into the nano-Si/SiOx structure as a result of the high diffusion efficiency of O inside Si and high surface area of the sludge. After further process, a yolk/shell Si/C structure was obtained as an anode material for LIBs. This composite demonstrated an excellent cycling stability, with a high reversible capacity (˜ 1250 mAh/g for 500 cycles), by void space originally left by the SiOx accommodate inner Si expansion. We believe this is a rather simple way to convert the waste Si into a valuable nano-Si for LIB applications.

  15. Positron Annihilation Study of Ion-irradiated Si

    International Nuclear Information System (INIS)

    Shin, Jung Ki; Kwon, Jun Hyun; Lee, Jong Yong

    2009-01-01

    Structural parts like a spaceship, satellite and solar cell are composed of metal alloy or semiconductor materials. Especially, Si is used as a primary candidate alloy. But, manned and robotic missions to the Earth's moon and Mars are exposed to a continuous flux of Galactic Cosmic Rays (GCR) and occasional, but intense, fluxes of Solar Energetic Particles. These natural radiations impose hazards to manned exploration. Irradiation of cosmic particle induces various changes in the mechanical and physical properties of device steels. It is, therefore, important to investigate radiation damage to the component materials in semiconductor. The evolution of radiation-induced defects leads to degradation of the mechanical properties. One of them includes irradiation embrittlement, which can cause a loss of ductility and further increase the probability of a brittle fracture. It can be more dangerous in the space. Positron annihilation lifetime spectroscopy(PALS) have been applied to investigate the production of vacancy-type defects for Ion-irradiated Si wafer penetrated by H, He, O and Fe ions. Then, we carried out a comparison with an un-irradiated Si wafer

  16. Bremsstrahlung and Ion Beam Current Measurements with SuSI ECR Ion Source

    International Nuclear Information System (INIS)

    Ropponen, T.

    2012-01-01

    This series of slides presents: the Superconducting Source for Ions (SuSI), the X-ray measurement setup, the different collimation schemes, the flat B operation versus B(min) operation, and the impact of tuning ∇B while keeping fixed field profile

  17. Charge steering of laser plasma accelerated fast ions in a liquid spray — creation of MeV negative ion and neutral atom beams

    International Nuclear Information System (INIS)

    Schnürer, M.; Abicht, F.; Priebe, G.; Braenzel, J.; Prasad, R.; Borghesi, M.; Andreev, A.; Nickles, P. V.; Jequier, S.; Tikhonchuk, V.; Ter-Avetisyan, S.

    2013-01-01

    The scenario of “electron capture and loss” has been recently proposed for the formation of negative ion and neutral atom beams with up to MeV kinetic energy [S. Ter-Avetisyan, et al., Appl. Phys. Lett. 99, 051501 (2011)]. Validation of these processes and of their generic nature is here provided in experiments where the ion source and the interaction medium have been spatially separated. Fast positive ions accelerated from a laser plasma source are sent through a cold spray where their charge is changed. Such formed neutral atom or negative ion has nearly the same momentum as the original positive ion. Experiments are released for protons, carbon, and oxygen ions and corresponding beams of negative ions and neutral atoms have been obtained. The electron capture and loss phenomenon is confirmed to be the origin of the negative ion and neutral atom beams. The equilibrium ratios of different charge components and cross sections have been measured. Our method is general and allows the creation of beams of neutral atoms and negative ions for different species which inherit the characteristics of the positive ion source

  18. In situ and ex situ characterization of the ion-irradiation effects in third generation SiC fibers

    International Nuclear Information System (INIS)

    Huguet-Garcia, Juan

    2015-01-01

    The use of third generation SiC fibers, Tyranno SA3 (TSA3) and Hi Nicalon S (HNS), as reinforcement for ceramic composites for nuclear applications requires the characterization of its structural stability and mechanical behavior under irradiation. Regarding the radiation stability, ion-amorphization kinetics of these fibers have been studied and compared to the model material, i.e. 6H-SiC single crystals, with no significant differences. For all samples, full amorphization threshold dose yields ∼0.4 dpa at room temperature and complete amorphization was not achieved for irradiation temperatures over 200 C. Successively, ion-amorphized samples have been thermally annealed. It is reported that thermal annealing at high temperatures not only induces the recrystallization of the ion-amorphized samples but also causes unrecoverable mechanical failure, i.e. cracking and delamination. Cracking is reported to be a thermally driven phenomenon characterized by activation energy of 1.05 eV. Regarding the mechanical irradiation behavior, irradiation creep of TSA3 fibers has been investigated using a tensile device dedicated to in situ tests coupled to two different ion-irradiation lines. It is reported that ion irradiation (12 MeV C 4+ and 92 MeV Xe 23+ ) induces a time-dependent strain under loads where thermal creep is negligible. In addition, irradiation strain is reported to be higher at low irradiation temperatures due to a coupling between irradiation swelling and irradiation creep. At high temperatures, near 1000 C, irradiation swelling is minimized hence allowing the characterization of the irradiation creep. Irradiation creep rate is characterized by a linear correlation between the ion flux and the strain rate and a square root dependence with the applied load. Finally, it has been reported that the higher the electronic energy loss contribution to the stopping regime the higher the irradiation creep of the fiber. (author) [fr

  19. Gamma-ray multiplicity measurements in the 28Si + 64Ni reaction at 163.8 MeV

    International Nuclear Information System (INIS)

    Di Pietro, A.; Cardella, G.; Musumarra, A.; Papa, M.; Pappalardo, G.; Rizzo, F.; De Rosa, A.; D'Onofrio, A.; Inglima, G.; Roca, V.; Romano, M.; Romoli, M.; Sandoli, M.; Terrasi, F.; Fioretto, E.

    1994-01-01

    The 28 Si+ 64 Ni reaction at 163.8 MeV incident energy is studied by measuring in coincidence γ-rays and charged particles identified from Z 2 to Z = 16. The transition from quasi-elastic to more damped reactions is observed when the difference between the detected charge and the projectile one is increased. The strong influence of the particle decay on the measured γ-ray multiplicity is evidenced with the help of the statistical model computer code CASCADE. Dissipative events are well described in the rolling limit with excitation energy equally shared between the fragments. The overall agreement is lost for the fragments with the projectile charge which show a small value of the γ-multiplicity even for dissipative events. This is probably connected with the previously observed non statistical behavior of gamma rays emitted in coincidence with projectile-like fragments. In the alpha-spectrum measured in coincidence with gamma-rays, the deexcitation of fused systems is clearly separated from in flight emission of deep inelastic fragments. The low measured gamma-ray multiplicity for fusion events is qualitatively explained taking into account the effect of alpha-emission in the statistical decay. (orig.)

  20. Ion-induced damage and amorphization in Si

    International Nuclear Information System (INIS)

    Holland, O.W.; White, C.W.

    1990-01-01

    Ion-induced damage growth in high-energy, self-ion irradiated Si was studied using electron microscopy and Rutherford backscattering spectroscopy. The results show that there is a marked variation in the rate of damage growth, as well as the damage morphology, along the path of the ion. Near the ion end-of-range (eor), damage increases monotonically with ion fluence until a buried amorphous layer is formed, while damage growth saturates at a low level in the region ahead. The morphology of the damage in the saturated region is shown to consist predominantly of simple defect clusters such as the divacancy. Damage growth remains saturated ahead of the eor until expansion of the buried amorphous layer encroaches into the region. A homogeneous growth model is presented which accounts for damage saturation, and accurately predicts the dose-rate dependence of the saturation level. Modifications of the model are discussed which are needed to account for the rapid growth in the eor region and near the interface of the buried amorphous layer. Two important factors contributing to rapid damage growth are identified. Spatial separation of the Frenkel defect pairs (i.e. interstitials and vacancies) due to the momentum of the interstitials is shown to greatly impact damage growth near the eor, while uniaxial strain in the interfacial region of the amorphous layer is identified as an important factor contributing to growth at that location. 20 refs., 10 figs

  1. Ion implantation into amorphous Si layers to form carrier-selective contacts for Si solar cells

    International Nuclear Information System (INIS)

    Feldmann, Frank; Mueller, Ralph; Reichel, Christian; Hermle, Martin

    2014-01-01

    This paper reports our findings on the boron and phosphorus doping of very thin amorphous silicon layers by low energy ion implantation. These doped layers are implemented into a so-called tunnel oxide passivated contact structure for Si solar cells. They act as carrier-selective contacts and, thereby, lead to a significant reduction of the cell's recombination current. In this paper we address the influence of ion energy and ion dose in conjunction with the obligatory high-temperature anneal needed for the realization of the passivation quality of the carrier-selective contacts. The good results on the phosphorus-doped (implied V oc = 725 mV) and boron-doped passivated contacts (iV oc = 694 mV) open a promising route to a simplified interdigitated back contact (IBC) solar cell featuring passivated contacts. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Beam-envelope calculations of space-charge loaded beams in MeV dc ion-implantation facilities

    International Nuclear Information System (INIS)

    Urbanus, W.H.; Bannenberg, J.G.; Doorn, S.; Saris, F.W.; Koudijs, R.; Dubbelman, P.; Koelewijn, W.

    1989-01-01

    MeV dc ion accelerators are being developed that can deliver a beam current up to several hundred micro-amperes. At the low-energy part of the accelerator, the beam transport is space-charge dominated rather than emittance dominated. A system of differential equations has been derived, based on the Kapchinski-Vladimirski equations, which describe the envelope of a space-charge loaded ion beam, taking a longitudinal electrical field in an accelerating tube into account. The equations have been used to design the accelerator of a high-current 1 MV heavy-ion implantation facility. Furthermore, the design of a 2 MV accelerator is presented, which is used for analyzing techniques such as RBS and PIXE. Both facilities are based on single-ended Van de Graaff accelerators. (orig.)

  3. Scaling of ion implanted Si:P single electron devices

    International Nuclear Information System (INIS)

    Escott, C C; Hudson, F E; Chan, V C; Petersson, K D; Clark, R G; Dzurak, A S

    2007-01-01

    We present a modelling study on the scaling prospects for phosphorus in silicon (Si:P) single electron devices using readily available commercial and free-to-use software. The devices comprise phosphorus ion implanted, metallically doped (n + ) dots (size range 50-500 nm) with source and drain reservoirs. Modelling results are compared to measurements on fabricated devices and discussed in the context of scaling down to few-electron structures. Given current fabrication constraints, we find that devices with 70-75 donors per dot should be realizable. We comment on methods for further reducing this number

  4. Scaling of ion implanted Si:P single electron devices

    Energy Technology Data Exchange (ETDEWEB)

    Escott, C C [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Hudson, F E [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Chan, V C [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Petersson, K D [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Clark, R G [Centre for Quantum Computer Technology, School of Physics, UNSW, Sydney, 2052 (Australia); Dzurak, A S [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia)

    2007-06-13

    We present a modelling study on the scaling prospects for phosphorus in silicon (Si:P) single electron devices using readily available commercial and free-to-use software. The devices comprise phosphorus ion implanted, metallically doped (n{sup +}) dots (size range 50-500 nm) with source and drain reservoirs. Modelling results are compared to measurements on fabricated devices and discussed in the context of scaling down to few-electron structures. Given current fabrication constraints, we find that devices with 70-75 donors per dot should be realizable. We comment on methods for further reducing this number.

  5. Tokamak ion temperature and poloidal field diagnostics using 3 MeV protons

    International Nuclear Information System (INIS)

    Heidbrink, W.W.; Strachan, J.D.

    1984-10-01

    The 3 MeV protons created by d(d,p)t fusion reactions in a moderately sized tokamak leave the plasma on trajectories determined by the position of their birth and by the poloidal magnetic field. Pitch-angle resolution of the escaping 3 MeV protons can separately resolve the spatial distribution of the d(d,p)t fusion reactions and the poloidal field distribution inside the tokamak. These diagnostic techniques have been demonstrated on PLT with an array of collimated surface barrier detectors

  6. Effect of simultaneous ion irradiation on microstructural change of SiC/SiC composites at high temperature

    International Nuclear Information System (INIS)

    Taguchi, T.; Wakai, E.; Igawa, N.; Nogami, S.; Snead, L.L.; Hasegawa, A.; Jitsukawa, S.

    2002-01-01

    The effect of simultaneous triple ion irradiation of He, H and Si on microstructural evolution of two kinds of SiC/SiC composites (HNS composite (using Hi-Nicalon type S SiC fiber) and TSA composite (using Tyranno SA SiC fiber)) at 1000 deg. C has been investigated. The microstructure observations of SiC/SiC composites irradiated to 10 dpa were examined by transmission electron microscopy. He bubbles were hardly formed in matrix of TSA composite, but many helium bubbles and some cracks were observed at grain boundaries of matrix of HNS composite. He bubbles and cracks were not, on the other hand, observed in the both fiber fabrics of HNS and TSA composites. Debonding between fiber and carbon layer following irradiation region was not observed in the both composites. Under these irradiation conditions, TSA composite showed the better microstructural stability against ion beams irradiation than one of HNS composite

  7. Damage accumulation in nitrogen implanted 6H-SiC: Dependence on the direction of ion incidence and on the ion fluence

    International Nuclear Information System (INIS)

    Zolnai, Z.; Ster, A.; Khanh, N. Q.; Battistig, G.; Lohner, T.; Gyulai, J.; Kotai, E.; Posselt, M.

    2007-01-01

    The influence of crystallographic orientation and ion fluence on the shape of damage distributions induced by 500 keV N + implantation at room temperature into 6H-SiC is investigated. The irradiation was performed at different tilt angles between 0 degree sign and 4 degree sign with respect to the crystallographic axis in order to consider the whole range of beam alignment from channeling to random conditions. The applied implantation fluence range was 2.5x10 14 -3x10 15 cm -2 . A special analytical method, 3.55 MeV 4 He + ion backscattering analysis in combination with channeling technique (BS/C), was employed to measure the disorder accumulation simultaneously in the Si and C sublattices of SiC with good depth resolution. For correct energy to depth conversion in the BS/C spectra, the average electronic energy loss per analyzing He ion for the axial channeling direction was determined. It was found that the tilt angle of nitrogen implantation has strong influence on the shape of the induced disorder profiles. Significantly lower disorder was found for channeling than for random irradiation. Computer simulation of the measured BS/C spectra showed the presence of a simple defect structure in weakly damaged samples and suggested the formation of a complex disorder state for higher disorder levels. Full-cascade atomistic computer simulation of the ion implantation process was performed to explain the differences in disorder accumulation on the Si and C sublattices. The damage buildup mechanism was interpreted with the direct-impact, defect-stimulated amorphization model in order to understand damage formation and to describe the composition of structural disorder versus the ion fluence and the implantation tilt angle

  8. Effect of 50 MeV Li3+ ion irradiation on electrical characteristics of high speed NPN power transistor

    International Nuclear Information System (INIS)

    Dinesh, C.M.; Ramani; Radhakrishna, M.C.; Dutt, R.N.; Khan, S.A.; Kanjilal, D.

    2008-01-01

    Silicon NPN overlay RF power high speed commercial bipolar junction transistors (BJTs) find applications in military, space and communication equipments. Here we report the effect of 50 MeV Li 3+ ion irradiation in the fluence range 1 x 10 11 -1.8 x 10 12 ions cm -2 on NPN power transistor. The range (R), electronic energy loss (S e ), nuclear energy loss (S n ), total ionizing dose (TID) and total displacement damage (D d ) in the silicon target are calculated from TRIM Monte Carlo Code. Output resistance is 3.568 x 10 4 Ω for unirradiated device and it increases to 6 x 10 7 Ω as the fluence is increased from 1 x 10 11 to 1.8 x 10 12 ions cm -2 . The capacitance of the emitter-base junction of the transistor decreases and dielectric loss of the emitter-base junction increases with increase in ion fluence. The built in voltage of the unirradiated sample is 0.5 V and it shifts to 0.4 V after irradiation at fluence of 1.8 x 10 12 ions cm -2 and the corresponding doping density reduced to 5.758 x 10 16 cm -3 . The charge carrier removal rate varies linearly with the increase in ion fluence

  9. Effect of swift heavy ion irradiation on deep levels in Au /n-Si (100) Schottky diode studied by deep level transient spectroscopy

    Science.gov (United States)

    Kumar, Sandeep; Katharria, Y. S.; Kumar, Sugam; Kanjilal, D.

    2007-12-01

    In situ deep level transient spectroscopy has been applied to investigate the influence of 100MeV Si7+ ion irradiation on the deep levels present in Au/n-Si (100) Schottky structure in a wide fluence range from 5×109to1×1012ions cm-2. The swift heavy ion irradiation introduces a deep level at Ec-0.32eV. It is found that initially, trap level concentration of the energy level at Ec-0.40eV increases with irradiation up to a fluence value of 1×1010cm-2 while the deep level concentration decreases as irradiation fluence increases beyond the fluence value of 5×1010cm-2. These results are discussed, taking into account the role of energy transfer mechanism of high energy ions in material.

  10. Exfoliation on stainless steel and inconel produced by 0.8-4 MeV helium ion bombardment

    International Nuclear Information System (INIS)

    Paszti, F.; Mezey, G.; Pogany, L.; Fried, M.; Manuaba, A.; Kotai, E.; Lohner, T.; Pocs, L.

    1982-11-01

    Trying to outline the energy dependence of surface deformations such as exfoliation and flaking on candidate CTR first-wall materials, stainless steel and two types of inconels were bombarded by 0.8, 1 and 4 MeV helium ions. All the bombarded spots could be characterized by by large exfoliations covering almost the total implanted area. No spontaneous rupture was observed except on one type of inconel where flaking took place right after reaching the critical dose. After mechanical opening of the formations, similar inner morphology was found as in our previous studies on gold. (author)

  11. 130 MeV Au ion irradiation induced dewetting on In{sub 2}Te{sub 3} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Matheswaran, P.; Abhirami, K.M.; Gokul, B. [Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029 (India); Sathyamoorthy, R., E-mail: rsathya1959@gmail.com [Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029 (India); Prakash, Jai [Department of Chemistry, M.M.H. College, Ghaziabad 201001 (India); Asokan, K.; Kanjilal, D. [Materials Science Division, Inter University Accelerator Centre, New Delhi 110067 (India)

    2012-09-01

    Highlights: Black-Right-Pointing-Pointer In{sub 2}Te{sub 3} phase formed from In/Te bilayer by 130 MeV Au ion irradiation. Black-Right-Pointing-Pointer Lower fluence results mixed phases with initial state of dewetting. Black-Right-Pointing-Pointer At higher fluence, In{sub 2}Te{sub 3} phase with complete dewetting pattern is formed. Black-Right-Pointing-Pointer Thermal spike model is used to explain the inter face mixing phenomena. Black-Right-Pointing-Pointer SHI irradiation may be used to functionalize the structural and surface properties of thin films. - Abstract: In/Te bilayer thin films were prepared by sequential thermal evaporation and subsequently irradiated by 130 MeV Au ions. The pristine and irradiated samples were characterized by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) techniques. RBS spectra reveal the sputtering of Te film and interface mixing, with increasing fluence. The surface morphology showed the beginning of dewetting of Te thin film and formation of the partially connected with the mixed zones at the fluence of 1 Multiplication-Sign 10{sup 13} ions/cm{sup 2}. At the higher fluence of 3 Multiplication-Sign 10{sup 13} ions/cm{sup 2}, dewetted structures were isolated at the surface. Above results are explained based on the formation of craters, sputtering and dewetting followed by inter-diffusion at the interface of molten zones due to thermal spike induced by Au ions.

  12. Medium-energy ion-beam simulation of the effect of ionizing radiation and displacement damage on SiO{sub 2}-based memristive nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Belov, Alexey; Mikhaylov, Alexey; Korolev, Dmitry; Guseinov, Davud; Gryaznov, Eugeny; Okulich, Eugenia; Sergeev, Victor; Antonov, Ivan; Kasatkin, Alexandr; Gorshkov, Oleg [Lobachevsky University, 23/3 Gagarin prospect, 603950 Nizhny Novgorod (Russian Federation); Tetelbaum, David, E-mail: tetelbaum@phys.unn.ru [Lobachevsky University, 23/3 Gagarin prospect, 603950 Nizhny Novgorod (Russian Federation); Kozlovski, Vitali [St. Petersburg State Polytechnic University, 29 Polytechnicheskaya street, 195251 St. Petersburg (Russian Federation)

    2016-07-15

    The principles of ion-beam simulation of the effect of fast (fission) neutrons and high-energy protons based on medium-energy ion irradiation have been developed for the Au/Zr/SiO{sub 2}/TiN/Ti capacitor-like memristive nanostructures demonstrating the repeatable resistive switching phenomenon. By using the Monte-Carlo approach, the irradiation fluences of H{sup +}, Si{sup +} and O{sup +} ions at the energy of 150 keV are determined that provide the ionization and displacement damage equivalent to the cases of space protons (15 MeV) and fission neutrons (1 MeV) irradiation. No significant change in the resistive switching parameters is observed under ion irradiation up to the fluences corresponding to the extreme fluence of 10{sup 17} cm{sup −2} of space protons or fission neutrons. The high-level radiation tolerance of the memristive nanostructures is experimentally confirmed with the application of 15 MeV proton irradiation and is interpreted as related to the local nature of conducting filaments and high concentration of the initial field-induced defects in oxide film.

  13. Influence of ion beam and geometrical parameters on properties of Si thin films grown by Ar ion beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bundesmann, Carsten; Feder, Rene; Neumann, Horst [Leibniz-Institut fuer Oberflaechenmodifizierung e.V., Leipzig (Germany)

    2012-07-01

    Ion beam sputtering (IBS) offers, in contrast to other physical vapour deposition techniques, such as magnetron sputtering or electron beam evaporation, the opportunity to change the properties of the layer forming particles (sputtered and scattered particles) by varying ion beam parameters (ion species, ion energy) and geometrical parameters (ion incidence angle, emission angle). Consequently, these effects can be utilized to tailor thin film properties [1]. The goal is to study systematically the correlations between the primary and secondary parameters and, at last, the effects on the properties of Si thin films, such as optical properties, stress, surface topography and composition. First experimental results are presented for Ar-ion sputtering of Si.

  14. Enhanced defects recombination in ion irradiated SiC

    International Nuclear Information System (INIS)

    Izzo, G.; Litrico, G.; Grassia, F.; Calcagno, L.; Foti, G.

    2010-01-01

    Point defects induced in SiC by ion irradiation show a recombination at temperatures as low as 320 K and this process is enhanced after running current density ranging from 80 to 120 A/cm 2 . Ion irradiation induces in SiC the formation of different defect levels and low-temperature annealing changes their concentration. Some levels (S 0 , S x and S 2 ) show a recombination and simultaneously a new level (S 1 ) is formed. An enhanced recombination of defects is besides observed after running current in the diode at room temperature. The carriers introduction reduces the S 2 trap concentration, while the remaining levels are not modified. The recombination is negligible up to a current density of 50 A/cm 2 and increases at higher current density. The enhanced recombination of the S 2 trap occurs at 300 K, which otherwise requires a 400 K annealing temperature. The process can be related to the electron-hole recombination at the associated defect.

  15. Study of heavy ion fusion: application to the system 28Si + 28Si

    International Nuclear Information System (INIS)

    Plagnol, E.

    1982-03-01

    Study of the fusion reactions between medium mass range heavy ions (experiments on 56 Ni compound nucleus formed by the reaction 28 Si + 28 Si): - analysis of the properties of the compound nucleus de-excitation process: utilization of the evaporation model based on the Hauser-Fesbach statistical model; study of the evolution of the production cross sections of the evaporation residues as a function of the excitation energy and of the angular momentum; - analysis of the kinetics of the compound nucleus formation, with construction of a model describing the various observed regimes, as a function of energy, in the compound nucleus formation cross section: study of the properties of the rotating liquid drop and of the formation kinetics evolution of the nuclei under Coulomb and nuclear potentials, up to a minimal approach distance, sticking conditions, and development towards scission or equilibrium state (compound nucleus) [fr

  16. Self-organization of nanocluster δ-layers at ion-beam-mixed Si-SiO2 interfaces

    International Nuclear Information System (INIS)

    Roentzsch, L.

    2003-11-01

    This diploma thesis presents experimental evidence of a theoretical concept which predicts the self-organization of δ-layers of silicon nanoclusters in the buried oxide of a MOS-like structure. This approach of ''bottom-up'' structuring might be of eminent importance in view of future semiconductor memory devices. Unconventionally, a 15 nm thin SiO 2 layer, which is enclosed by a 50 nm poly-Si capping layer and the Si substrate, is irradiated with Si + ions. Ion impact drives the system to a state far from thermodynamic equilibrium, i.e. the local composition of the target is modified to a degree unattainable in common processes. A region of SiO x (x 2 matrix at a distance of ∼3 nm from the Si substrate. The physical mechanisms of ion mixing of the two Si-SiO 2 interfaces and subsequent phase separation, which result in the desired sample structure, are elucidated from the viewpoint of computer simulations. In addition, experimental evidence is presented based on various methods, including TEM, RBS, and SIMS. A novel method of Si nanocluster decoration is of particular importance which applies Ge as contrast enhancing element in TEM studies of tiny Si nanoclusters. (orig.)

  17. Preparation of a Si/SiO2 -Ordered-Mesoporous-Carbon Nanocomposite as an Anode for High-Performance Lithium-Ion and Sodium-Ion Batteries.

    Science.gov (United States)

    Zeng, Lingxing; Liu, Renpin; Han, Lei; Luo, Fenqiang; Chen, Xi; Wang, Jianbiao; Qian, Qingrong; Chen, Qinghua; Wei, Mingdeng

    2018-04-03

    In this work, an Si/SiO 2 -ordered-mesoporous carbon (Si/SiO 2 -OMC) nanocomposite was initially fabricated through a magnesiothermic reduction strategy by using a two-dimensional bicontinuous mesochannel of SiO 2 -OMC as a precursor, combined with an NaOH etching process, in which crystal Si/amorphous SiO 2 nanoparticles were encapsulated into the OMC matrix. Not only can such unique porous crystal Si/amorphous SiO 2 nanoparticles uniformly dispersed in the OMC matrix mitigate the volume change of active materials during the cycling process, but they can also improve electrical conductivity of Si/SiO 2 and facilitate the Li + /Na + diffusion. When applied as an anode for lithium-ion batteries (LIBs), the Si/SiO 2 -OMC composite displayed superior reversible capacity (958 mA h g -1 at 0.2 A g -1 after 100 cycles) and good cycling life (retaining a capacity of 459 mA h g -1 at 2 A g -1 after 1000 cycles). For sodium-ion batteries (SIBs), the composite maintained a high capacity of 423 mA h g -1 after 100 cycles at 0.05 A g -1 and an extremely stable reversible capacity of 190 mA h g -1 was retained even after 500 cycles at 1 A g -1 . This performance is one of the best long-term cycling properties of Si-based SIB anode materials. The Si/SiO 2 -OMC composites exhibited great potential as an alternative material for both lithium- and sodium-ion battery anodes. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Stress map for ion irradiation: Depth-resolved dynamic competition between radiation-induced viscoelastic phenomena in SiO2

    International Nuclear Information System (INIS)

    Dillen, T. van; Siem, M.Y.S.; Polman, A.

    2004-01-01

    The dynamic competition between structural transformation, Newtonian viscous flow, and anisotropic strain generation during ion irradiation of SiO 2 , leads to strongly depth-dependent evolution of the mechanical stress, ranging between compressive and tensile. From independent in situ stress measurements during irradiation, generic expressions are derived of the nuclear stopping dependence of both the structural transformation rate and the radiation-induced viscosity. Using these data we introduce and demonstrate the concept of a 'stress map' that predicts the depth-resolved saturation stress in SiO 2 for any irradiation up to several MeV

  19. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

    International Nuclear Information System (INIS)

    Kaushik, Priya Darshni; Ivanov, Ivan G.; Lin, Pin-Cheng; Kaur, Gurpreet; Eriksson, Jens; Lakshmi, G.B.V.S.; Avasthi, D.K.; Gupta, Vinay; Aziz, Anver; Siddiqui, Azher M.; Syväjärvi, Mikael; Yazdi, G. Reza

    2017-01-01

    Highlights: • For the first time the gas sensing application of SHI irradiated epitaxial graphene on SiC is explored. • Surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles. • Existence of an optimal fluence which maximize the gas sensing response towards NO_2 and NH_3 gases. - Abstract: In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 10"1"3 ions/cm"2). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and spintronic

  20. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

    Energy Technology Data Exchange (ETDEWEB)

    Kaushik, Priya Darshni, E-mail: kaushik.priyadarshni@gmail.com [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Department of Physics, Jamia Millia Islamia, New Delhi, 110025 (India); Ivanov, Ivan G.; Lin, Pin-Cheng [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Kaur, Gurpreet [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Eriksson, Jens [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Lakshmi, G.B.V.S. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067 (India); Avasthi, D.K. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067 (India); Amity Institute of Nanotechnology, Noida 201313 (India); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Aziz, Anver; Siddiqui, Azher M. [Department of Physics, Jamia Millia Islamia, New Delhi, 110025 (India); Syväjärvi, Mikael [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Yazdi, G. Reza, E-mail: yazdi@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden)

    2017-05-01

    Highlights: • For the first time the gas sensing application of SHI irradiated epitaxial graphene on SiC is explored. • Surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles. • Existence of an optimal fluence which maximize the gas sensing response towards NO{sub 2} and NH{sub 3} gases. - Abstract: In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 10{sup 13} ions/cm{sup 2}). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and

  1. TL response of Eu activated LiF nanocubes irradiated by 85 MeV carbon ions

    Energy Technology Data Exchange (ETDEWEB)

    Salah, Numan, E-mail: nsalah@kau.edu.sa [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Alharbi, Najlaa D. [Sciences Faculty for Girls, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Habib, Sami S. [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Lochab, S.P. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

    2015-09-01

    Carbon ions were found to be effective for cancer treatment. These heavy ions have a high relative biological effectiveness compared to those of photons. They have higher linear energy transfer and sharper Bragg peak with a very excellent local tumor control. However, the dose of these swift heavy ions needs to be measured with great accuracy. Lithium fluoride (LiF) is a highly sensitive phosphor widely used for radiation dosimetry. In this work Eu activated LiF nanocubes were exposed to 85 MeV C{sup 6+} ion beam and evaluated for their thermoluminescence (TL) response. Pellet forms of this nanomaterial were exposed to these ions in the fluence range 10{sup 9}–10{sup 13} ions/cm{sup 2}. The obtained result shows a prominent TL glow peak at around 320 °C, which is different than that induced by gamma rays. This glow peak exhibits a linear response in the range 10{sup 9}–10{sup 12} ions/cm{sup 2}, corresponding to the equivalent absorbed doses 0.273–273 kGy. The absorbed doses, penetration depths and main energy loss were calculated using TRIM code based on the Monte Carlo simulation. The supralinearity function and stopping power in this nanomaterial were also studied. The modification induced in the glow curve structure as a result of changing irradiation type might be utilized to use LiF:Eu nanocubes as a dosimeter for mixed filed radiations. Moreover, the wide linear response of LiF:Eu nanocubes along with the low fading are another imperative results suggesting that this nanomaterial might be a good candidate for carbon ions dosimetry.

  2. TL response of Eu activated LiF nanocubes irradiated by 85 MeV carbon ions

    International Nuclear Information System (INIS)

    Salah, Numan; Alharbi, Najlaa D.; Habib, Sami S.; Lochab, S.P.

    2015-01-01

    Carbon ions were found to be effective for cancer treatment. These heavy ions have a high relative biological effectiveness compared to those of photons. They have higher linear energy transfer and sharper Bragg peak with a very excellent local tumor control. However, the dose of these swift heavy ions needs to be measured with great accuracy. Lithium fluoride (LiF) is a highly sensitive phosphor widely used for radiation dosimetry. In this work Eu activated LiF nanocubes were exposed to 85 MeV C 6+ ion beam and evaluated for their thermoluminescence (TL) response. Pellet forms of this nanomaterial were exposed to these ions in the fluence range 10 9 –10 13 ions/cm 2 . The obtained result shows a prominent TL glow peak at around 320 °C, which is different than that induced by gamma rays. This glow peak exhibits a linear response in the range 10 9 –10 12 ions/cm 2 , corresponding to the equivalent absorbed doses 0.273–273 kGy. The absorbed doses, penetration depths and main energy loss were calculated using TRIM code based on the Monte Carlo simulation. The supralinearity function and stopping power in this nanomaterial were also studied. The modification induced in the glow curve structure as a result of changing irradiation type might be utilized to use LiF:Eu nanocubes as a dosimeter for mixed filed radiations. Moreover, the wide linear response of LiF:Eu nanocubes along with the low fading are another imperative results suggesting that this nanomaterial might be a good candidate for carbon ions dosimetry

  3. Physical and chemical changes induced by 70 MeV carbon ions in polyvinylidene difluoride (PVDF) polymer

    International Nuclear Information System (INIS)

    Virk, H.S.; Chandi, P.S.; Srivastava, A.K.

    2001-01-01

    Physical and chemical changes induced by 70 MeV carbon ions ( 12 C 5+ ) have been investigated in bulk polyvinylidene fluoride (PVDF) polymer. The induced changes have been studied with respect to their optical, chemical and structural response using UV-visible, FTIR and XRD techniques. The ion fluences ranging from 2.5x10 11 to 9x10 13 ions cm -2 have been used to study the irradiation effects. It has been observed that at the fluence of 9x10 13 ions cm -2 the PVDF sample became brittle and practically it was not possible to handle it for any further measurements. The recorded UV-visible spectra show that the optical absorption increases with increasing fluence, indicating maximum absorption at 200 nm. An interesting feature of UV-visible spectra is that dips change into peaks and vice versa with increase of fluence. In the FTIR spectra, development of new peaks at 1714 and 3692 cm -1 along with disappearance of peaks at 2363 and 3025 cm -1 and shifting of peak at 2984-2974 cm -1 have been observed due to high energy irradiation, indicating the chemical changes induced by 12 C 5+ . The diffraction pattern of PVDF indicates that this polymer is semi-crystalline in nature; a large decrease in the diffraction intensity indicates decrease in crystallinity. Increase in crystallite size has also been observed due to heavy ion irradiation

  4. Microstructure and Nano-Hardness of 10 MeV Cl-Ion Irradiated T91 Steel

    International Nuclear Information System (INIS)

    Hu Jing; Wang Xianping; Gao Yunxia; Zhuang Zhong; Zhang Tao; Fang Qianfeng; Liu Changsong

    2015-01-01

    Hardening and elemental segregation of T91 martenstic steel irradiated by 10 MeV Cl ions to doses from 0.06 dpa to 0.83 dpa were investigated with the nanoindentation technique and transmission electron microscopy (TEM). The results demonstrated that the irradiation hardening was closely related with irradiation dose. By increasing the dose, the hardness increased rapidly at first from the initial value of 3.15 GPa before irradiation, and then tended to saturate at a value of 3.58 GPa at the highest dose of 0.83 dpa. Combined with TEM observation, the mechanism of hardening was preliminary attributed to the formation of M(Fe,Cr) 2 3C 6 carbides induced by the high energy Cl-ion irradiation. (paper)

  5. Study of ion beam sputtered Fe/Si interfaces as a function of Si layer thickness

    Science.gov (United States)

    Kumar, Anil; Brajpuriya, Ranjeet; Singh, Priti

    2018-01-01

    The exchange interaction in metal/semiconductor interfaces is far from being completely understood. Therefore, in this paper, we have investigated the nature of silicon on the Fe interface in the ion beam deposited Fe/Si/Fe trilayers keeping the thickness of the Fe layers fixed at 3 nm and varying the thickness of the silicon sandwich layer from 1.5 nm to 4 nm. Grazing incidence x-ray diffraction and atomic force microscopy techniques were used, respectively, to study the structural and morphological changes in the deposited films as a function of layer thickness. The structural studies show silicide formation at the interfaces during deposition and better crystalline structure of Fe layers at a lower spacer layer thickness. The magnetization behavior was investigated using magneto-optical Kerr effect, which clearly shows that coupling between the ferromagnetic layers is highly influenced by the semiconductor spacer layer thickness. A strong antiferromagnetic coupling was observed for a value of tSi = 2.5 nm but above this value an unexpected behavior of hysteresis loop (step like) with two coercivity values is recorded. For spacer layer thickness greater than 2.5 nm, an elemental amorphous Si layer starts to appear in the spacer layer in addition to the silicide layer at the interfaces. It is observed that in the trilayer structure, Fe layers consist of various stacks, viz., Si doped Fe layers, ferromagnetic silicide layer, and nonmagnetic silicide layer at the interfaces. The two phase hysteresis loop is explained on the basis of magnetization reversal of two ferromagnetic layers, independent of each other, with different coercivities. X-ray photo electron spectroscopy technique was also used to study interfaces characteristics as a function of tSi.

  6. Investigations on the structural and optical properties of the swift heavy ion irradiated 6H-SiC

    International Nuclear Information System (INIS)

    Viswanathan, E.; Katharria, Y.S.; Selvakumar, S.; Arulchakkaravarthi, A.; Kanjilal, D.; Sivaji, K.

    2011-01-01

    Research highlights: → We have reported the structural and optical properties of SHI irradiated 6H-SiC. → The change in Raman modes evidences the disorder accumulation with respect to ion fluence. → The disorder also causes the modification in the optical properties. → The time resolved photoluminescence reflects multiple lifetimes due to the degenerate defects states. → The study also reveals the presence of partial amorphous region due to SHI irradiation. -- Abstract: Single crystal 6H-SiC wafers have been irradiated with 150 MeV Ag 12+ ions with fluences ranging from 1 x 10 11 to 1 x 10 13 ions/cm 2 at 300 K. The defect accumulation as a function of fluence was studied to determine changes in structural and optical properties. The variation in the fundamental Raman modes of the crystalline 6H-SiC due to irradiation has been correlated with the disorder accumulation. The creation of defect states due to irradiation in the bandgap affects the blue-green photoluminescence emission in the irradiated samples. The UV-Visible absorption studies support the existence of defect states in the bandgap which is observed by the shift in the absorption edge towards the lower energy side with increasing fluence. Time Correlated Single Photon Counting photoluminescence decay results suggest that the existing defect states are radiative, exhibiting three lifetimes when irradiated with a fluence 5 x 10 11 ions/cm 2 . The total number of lifetime components was reduced for a fluence 1 x 10 13 ions/cm 2 as the defect states produced increase the non-radiative defect centres. These results suggest that the accumulation of defects due to irradiation at fluences 5 x 10 11 and 1 x 10 13 ions/cm 2 are degenerate configurations which exhibit multiple lifetimes in photoluminescence studies. It is inferred that the optically active defect states influence the transition rate of charge carriers in this device material.

  7. Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons

    Energy Technology Data Exchange (ETDEWEB)

    Kozlovski, V.V. [St. Petersburg State Polytechnic University, St. Petersburg 195251 (Russian Federation); Lebedev, A.A., E-mail: shura.lebe@mail.ioffe.ru [Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation); National Research University of Information Technologies, Mechanics, and Optics, St. Petersburg 197101 (Russian Federation); Emtsev, V.V.; Oganesyan, G.A. [Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation)

    2016-10-01

    Processes of radiation defect formation and conductivity compensation in silicon and silicon carbide irradiated with 0.9 MeV electrons are considered in comparison with the electron irradiation at higher energies. The experimental values of the carrier removal rate at the electron energy of 0.9 MeV are nearly an order of magnitude smaller than the similar values of the parameter for higher energy electrons (6–9 MeV). At the same time, the formation cross-section of primary radiation defects (Frenkel pairs, FPs) is nearly energy-independent in this range. It is assumed that these differences are due to the influence exerted by the energy of primary knocked-on atoms (PKAs). As the PKA energy increases, the average distance between the genetically related FPs grows and, as a consequence, the fraction of FPs unrecombined under irradiation becomes larger. The FP recombination radius is estimated (∼1.1 nm), which makes it possible to ascertain the charge state of the recombining components. Second, the increase in the PKA energy enables formation of new, more complex secondary radiation defects. At electron energies exceeding 15 MeV, the average PKA energies are closer to the values obtained under irradiation with 1 MeV protons, compared with an electron irradiation at the same energy. As for the radiation-induced defect formation, the irradiation of silicon with MeV protons can be, in principle, regarded as a superposition of the irradiation with 1 MeV electrons and that with silicon ions having energy of ∼1 keV, with the “source” of silicon ions generating these ions uniformly across the sample thickness.

  8. Heavy Ion Microbeam and Broadbeam Transients in SiGe HBTs

    Science.gov (United States)

    Pellish, Jonathan A.; Reed, Robert A.; McMorrow, Dale; Vizkelethy, Gyorgy; Dodd, Paul E.; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philippe; Duhamel, Olivier; Phillips, Stanley D.; hide

    2009-01-01

    SiGe HBT heavy ion current transients are measured using microbeam and both high- and low-energy broadbeam sources. These new data provide detailed insight into the effects of ion range, LET, and strike location.

  9. Accumulation and Recovery of Disorder on Silicon and Carbon Sublattices in Ion-Irradiated 6H-SiC

    International Nuclear Information System (INIS)

    Jiang, Weilin; Weber, William J.; Thevuthasan, Suntharampillai; Shutthanandan, V.

    2001-01-01

    Irradiation experiments have been performed at 100, 170 and 300 K for 6H-SiC single crystals using Au and He+ ions over a range of fluences. The evolution of disorder on the both Si and C sublattices has been simultaneously investigated using 0.94 MeV D Rutherford backscattering spectrometry in combination with 12C(d,p) nuclear reaction analysis in a axial channeling geometry. The results show that the dependence of disorder on dose is consistent with a combined direct-impact / defect-stimulated model. At low doses, a slightly higher rate of C disordering is observed, which is consistent with molecular dynamics simulations that suggest a smaller threshold displacement energy on the C sublattice. At higher doses, the rate of C disordering decreases more rapidly than the rate of Si disordering, which suggests a higher rate of dynamical recovery on the C sublattice under the irradiation conditions. Three distinct recovery stages are observed on both the Si and C sublattices in the Au-irradiated 6H-SiC. However, complete recovery of irradiation-induced disorder does not occur during isochronal annealing at temperatures up to 970 K

  10. Post-annealing recrystallization and damage recovery process in Fe ion implanted Si

    International Nuclear Information System (INIS)

    Naito, Muneyuki; Hirata, Akihiko; Ishimaru, Manabu; Hirotsu, Yoshihiko

    2007-01-01

    We have investigated ion-beam-induced and thermal annealing-induced microstructures in high fluence Fe implanted Si using transmission electron microscopy. Si(1 1 1) substrates were irradiated with 120 keV Fe ions at 120 K to fluences of 0.4 x 10 17 and 4.0 x 10 17 cm -2 . A continuous amorphous layer was formed on Si substrates in both as-implanted samples. After thermal annealing at 1073 K for 2 h, β-FeSi 2 fine particles buried in a polycrystalline Si layer were observed in the low fluence sample, while a continuous β-FeSi 2 layer was formed in the high fluence sample. We discuss the relationship between ion fluence and defects recovery process in Fe ion implanted Si

  11. Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay

    Science.gov (United States)

    Novaković, M.; Zhang, K.; Popović, M.; Bibić, N.; Hofsäss, H.; Lieb, K. P.

    2011-05-01

    Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and silicide phase formation depend sensitively on the ion and film parameters, including the structure of the metal/Si interface. Thin Co layers e-gun evaporated to a thickness of 50 nm on Si(1 0 0) wafers were bombarded at room temperature with 400-keV Xe + ions at fluences of up to 3 × 10 16 cm -2. We used either crystalline or pre-amorphized Si wafers the latter ones prepared by 1.0-keV Ar-ion implantation. The as-deposited or Xe-ion-irradiated samples were then isochronally annealed at temperatures up to 700 °C. Changes of the bilayer structures induced by ion irradiation and/or annealing were investigated with RBS, XRD and HRTEM. The mixing rate for the Co/c-Si couples, Δ σ2/ Φ = 3.0(4) nm 4, is higher than the value expected for ballistic mixing and about half the value typical for spike mixing. Mixing of pre-amorphized Si is much weaker relative to crystalline Si wafers, contrary to previous results obtained for Fe/Si bilayers. Annealing of irradiated samples produces very similar interdiffusion and phase formation patterns above 400 °C as in the non-irradiated Co/Si bilayers: the phase evolution follows the sequence Co 2Si → CoSi → CoSi 2.

  12. Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay

    International Nuclear Information System (INIS)

    Novakovic, M.; Zhang, K.; Popovic, M.; Bibic, N.; Hofsaess, H.; Lieb, K.P.

    2011-01-01

    Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and silicide phase formation depend sensitively on the ion and film parameters, including the structure of the metal/Si interface. Thin Co layers e-gun evaporated to a thickness of 50 nm on Si(1 0 0) wafers were bombarded at room temperature with 400-keV Xe + ions at fluences of up to 3 x 10 16 cm -2 . We used either crystalline or pre-amorphized Si wafers the latter ones prepared by 1.0-keV Ar-ion implantation. The as-deposited or Xe-ion-irradiated samples were then isochronally annealed at temperatures up to 700 o C. Changes of the bilayer structures induced by ion irradiation and/or annealing were investigated with RBS, XRD and HRTEM. The mixing rate for the Co/c-Si couples, Δσ 2 /Φ = 3.0(4) nm 4 , is higher than the value expected for ballistic mixing and about half the value typical for spike mixing. Mixing of pre-amorphized Si is much weaker relative to crystalline Si wafers, contrary to previous results obtained for Fe/Si bilayers. Annealing of irradiated samples produces very similar interdiffusion and phase formation patterns above 400 o C as in the non-irradiated Co/Si bilayers: the phase evolution follows the sequence Co 2 Si → CoSi → CoSi 2 .

  13. Charge-state distribution of MeV He ions scattered from the surface atoms

    International Nuclear Information System (INIS)

    Kimura, Kenji; Ohtsuka, Hisashi; Mannami, Michihiko

    1993-01-01

    The charge-state distribution of 500-keV He ions scattered from a SnTe (001) surface has been investigated using a new technique of high-resolution high-energy ion scattering spectroscopy. The observed charge-state distribution of ions scattered from the topmost atomic layer coincides with that of ions scattered from the subsurface region and does not depend on the incident charge state but depends on the exit angle. The observed exit-angle dependence is explained by a model which includes the charge-exchange process with the valence electrons in the tail of the electron distribution at the surface. (author)

  14. Short Communication on “In-situ TEM ion irradiation investigations on U{sub 3}Si{sub 2} at LWR temperatures”

    Energy Technology Data Exchange (ETDEWEB)

    Miao, Yinbin, E-mail: ymiao@anl.gov [Argonne National Laboratory, Lemont, IL 60439 (United States); Harp, Jason [Idaho National Laboratory, Idaho Fall, ID 83415 (United States); Mo, Kun [Argonne National Laboratory, Lemont, IL 60439 (United States); Bhattacharya, Sumit [Northwestern University, Evanston, IL 60208 (United States); Baldo, Peter; Yacout, Abdellatif M. [Argonne National Laboratory, Lemont, IL 60439 (United States)

    2017-02-15

    The radiation-induced amorphization of U{sub 3}Si{sub 2} was investigated by in-situ transmission electron microscopy using 1 MeV Kr ion irradiation. Both arc-melted and sintered U{sub 3}Si{sub 2} specimens were irradiated at room temperature to confirm the similarity in their responses to radiation. The sintered specimens were then irradiated at 350 °C and 550 °C up to 7.2 × 10{sup 15} ions/cm{sup 2} to examine their amorphization behavior under light water reactor (LWR) conditions. U{sub 3}Si{sub 2} remains crystalline under irradiation at LWR temperatures. Oxidation of the material was observed at high irradiation doses.

  15. Secondary ion emission from ultra-thin oxide layers bombarded by energetic (MeV) heavy ions: depth of origin and layer homogeneity

    International Nuclear Information System (INIS)

    Allali, H.; Nsouli, B.; Thomas, J.P.; Cabaud, B.; Fuchs, G.; Hoareau, A.; Treilleux, M.; Danel, J.S.

    1993-09-01

    The escape depth of the secondary ions resulting from electronic sputtering of fast heavy ions in inorganic thin films has been investigated. Chromium layers deposited onto SiO 2 substrate as well as SiO x layers deposited onto chromium substrate have been characterized by secondary ion emission mass spectrometry (SIMS) in combination with time-of-flight (TOF) mass analysis (also referred as HSF-SIMS). These crossed experiments lead to a value around 1 nm for SiO x layers and 0.5 nm for Cr layers. On the other hand, HSF-SIMS can be used to correlate the intensity of the secondary ion emission to the film coverage rate and (or) the morphology of particular films like those produced by Low Energy Cluster Beam Deposition (LECBD). Using Sb deposits, the non-linear relationship between ion emission and coverage is interpreted in terms of sputtering enhancement in the individual supported clusters. (author) 22 refs., 9 figs., 1 tab

  16. Anomalously high yield of doubly charged Si ions sputtered from cleaned Si surface by keV neutral Ar impact

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.; Morita, K. E-mail: k-morita@mail.nucl.nagoya-u.ac.jp; Dhole, S.D.; Ishikawa, D

    2001-08-01

    The energy spectra of positively charged and neutral species ejected from the Si(1 1 1) surfaces by keV Ar impact have been measured by means of a combined technique of the time-of-flight (TOF) analysis with the multi-photon resonance ionization spectroscopy (MPRIS). It is shown that positively charged species of Si{sup +}, Si{sup 2+} and SiO{sup +} are ejected from the as-cleaned 7x7 surface by 11 keV Ar impact. It is also shown that Ar sputter cleaning of the as-cleaned 7x7 surface for 14 min at the flux of 2x10{sup 13}/cm{sup 2}s removes completely the oxygen impurity and the yields of Si{sup 2+} is comparable to that of Si{sup +}. Moreover, the ionization probability of Si atoms sputtered is shown to be expressed as an exponential function of the inverse of their velocity. The production mechanism for the doubly charged Si ion is discussed based on the L-shell ionization of Si atoms due to quasi-molecule formation in the collisions of the surface atoms with energetic recoils and subsequent Auger decay of the L-shell vacancy to doubly ionized Si ions.

  17. Scanning deep level transient spectroscopy using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Laird, J S; Bardos, R A; Saint, A; Moloney, G M; Legge, G F.J. [Melbourne Univ., Parkville, VIC (Australia)

    1994-12-31

    Traditionally the scanning ion microprobe has given little or no information regarding the electronic structure of materials in particular semiconductors. A new imaging technique called Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is presented which is able to spatially map alterations in the band gap structure of materials by lattice defects or impurities. 3 refs., 2 figs.

  18. Meqalac Results - Multichannel Rf Acceleration of Nitrogen-Ions to 1 Mev

    NARCIS (Netherlands)

    Wojke, R. G. C.; Bannenberg, J. G.; Vijftigschild, A. J. M.; Giskes, F. G.; Ficke, H. G.; Klein, H.; Thomae, R. W.; Schempp, A.; Weis, T.; van Amersfoort, P. W.; Urbanus, W. H.

    1991-01-01

    In the MEQALAC (Multiple Electrostatic Quadrupole Linear Accelerator) multiple N+ ion beams are accelerated in 32 rf gaps, which are part of a modified interdigital-H-resonator operating at 25 MHz. The transverse focusing of the intense ion beams is achieved by means of sets of miniaturized

  19. Scanning deep level transient spectroscopy using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Laird, J.S.; Bardos, R.A.; Saint, A.; Moloney, G.M.; Legge, G.F.J. [Melbourne Univ., Parkville, VIC (Australia)

    1993-12-31

    Traditionally the scanning ion microprobe has given little or no information regarding the electronic structure of materials in particular semiconductors. A new imaging technique called Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is presented which is able to spatially map alterations in the band gap structure of materials by lattice defects or impurities. 3 refs., 2 figs.

  20. Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures

    DEFF Research Database (Denmark)

    Gaiduk, Peter; Hansen, John Lundsgaard; Nylandsted Larsen, Arne

    2014-01-01

    Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects.......Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects....

  1. Effect of 120 MeV Ag{sup 9+} ion irradiation of YCOB single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Arun Kumar, R., E-mail: rarunpsgtech@yahoo.com [Crystal Growth Centre, Anna University, Chennai 600 025 (India); Department of Basic Sciences - Physics Division, PSG College of Technology, Coimbatore 641 004 (India); Dhanasekaran, R. [Crystal Growth Centre, Anna University, Chennai 600 025 (India)

    2012-09-15

    Single crystals of yttrium calcium oxy borate (YCOB) grown from boron-tri-oxide flux were subjected to swift heavy ion irradiation using silver Ag{sup 9+} ions from the 15 UD Pelletron facility at Inter University Accelerator Center, New Delhi. The crystals were irradiated at 1 Multiplication-Sign 10{sup 13}, 5 Multiplication-Sign 10{sup 13} and 1 Multiplication-Sign 10{sup 14} ions/cm{sup 2} fluences at room temperature and with 5 Multiplication-Sign 10{sup 13} ions/cm{sup 2} fluence at liquid nitrogen temperature. The pristine and the irradiated samples were characterized by glancing angle X-ray diffraction, UV-Vis-NIR and photoluminescence studies. From the characterization studies performed on the samples, it is inferred that the crystals irradiated at liquid nitrogen temperature had fewer defects compared to the crystals irradiated at room temperature and the defects increased when the ion fluence was increased at room temperature.

  2. Heavy ion elastic and quasi-elastic scattering above E/A = 30 MeV

    International Nuclear Information System (INIS)

    Barrette, J.

    1986-05-01

    At high energy, heavy-ion elastic scattering probes the ion-ion potential in a large domain much inside the strong absorption radius. This results in a more precise determination of the real part of the nuclear potential and a consistent picture of its evolution with energy begins to emerge. It is relatively similar to that observed in light ion scattering. Even if the inelastic angular distributions seem to contain less refractive or interior contribution, coupled channel effects from these states are still important at least up to 20 MeV/n. Heavy-ion induced transfer reactions to discrete states have small cross sections but present a very strong selectivity for states with the highest available spin and could thus provide new and interesting spectroscopic information

  3. Doubly coherent production of π- by 3He ions of 910 MeV

    International Nuclear Information System (INIS)

    Aslanides, E.; Fassnacht, P.; Hibou, F.; Chiavassa, E.; Dellacasa, G.; Gallio, M.; Musso, A.; Bressani, T.; Puddu, G.

    1979-01-01

    The inclusive pion spectrum from the reaction 3 He+ 6 Li → π - +X at 910 MeV was measured at 0 0 with moderate resolution up to the kinematic limit of the two-body final-state reaction. A first analysis shows that the production of high-energy pions cannot be explained by the NN → NNπ process using conventional nucleon momentum distributions. At the end of the spectrum a clear deviation from the general falloff slope is observed and attributed to the doubly coherent reaction 3 He+ 6 Li → 9 C+π -

  4. Ion implantation enhanced metal-Si-metal photodetectors

    Science.gov (United States)

    Sharma, A. K.; Scott, K. A. M.; Brueck, S. R. J.; Zolper, J. C.; Myers, D. R.

    1994-05-01

    The quantum efficiency and frequency response of simple Ni-Si-Ni metal-semiconductor-metal (MSM) photodetectors at long wavelengths are significantly enhanced with a simple, ion-implantation step to create a highly absorbing region approx. 1 micron below the Si surface. The internal quantum efficiency is improved by a factor of approx. 3 at 860 nm (to 64%) and a full factor of ten at 1.06 microns (to 23%) as compared with otherwise identical unimplanted devices. Dark currents are only slightly affected by the implantation process and are as low as 630 pA for a 4.5-micron gap device at 10-V bias. Dramatic improvement in the impulse response is observed, 100 ps vs. 600 ps, also at 10-V bias and 4.5-micron gap, due to the elimination of carrier diffusion tails in the implanted devices. Due to its planar structure, this device is fully VLSI compatible. Potential applications include optical interconnections for local area networks and multi-chip modules.

  5. Effect of hydrogen ion beam treatment on Si nanocrystal/SiO_2 superlattice-based memory devices

    International Nuclear Information System (INIS)

    Fu, Sheng-Wen; Chen, Hui-Ju; Wu, Hsuan-Ta; Chuang, Bing-Ru; Shih, Chuan-Feng

    2016-01-01

    Graphical abstract: - Highlights: • Memory window and retention properties are improved employing HIBAS technique. • The O/Si ratio and radiative recombination are changed by HIBAS. • Memory properties are affected not only by Si NCs and O/Si ratio but also the RDCs. • The mechanism of hydrogen ion beam alters the memory properties is investigated. - Abstract: This study presents a novel route for synthesizing silicon-rich oxide (SRO)/SiO_2 superlattice-based memory devices with an improved memory window and retention properties. The SiO_2 and SRO superlattices are deposited by reactive sputtering. Specifically, the hydrogen ion beam is used to irradiate the SRO layer immediately after its deposition in the vacuum chamber. The use of the hydrogen ion beam was determined to increase oxygen content and the density of the Si nanocrystals. The memory window increased from 16 to 25.6 V, and the leakage current decreased significantly by two orders, to under ±20 V, for the hydrogen ion beam-prepared devices. This study investigates the mechanism into how hydrogen ion beam treatment alters SRO films and influences memory properties.

  6. Ion heating up to 1 MeV range with higher harmonic ICRF wave on JT-60U

    International Nuclear Information System (INIS)

    Nemoto, M.; Kusama, Y.; Hamamatsu, K.; Kimura, H.; Fujii, T.; Moriyama, S.; Saigusa, M.; Afanassiev, V.I.

    1997-01-01

    The properties of protons under accleration by an ion cyclotron range of frequency (ICRF) waves with the second to fourth hydrogen harmonics have been investigated in the JT-60U tokamak at the Japan Atomic Energy Research Institute (JAERI). Protons have been accelerated up to 1 MeV in the presence of an ICRF wave of fixed frequency, neutral beams (NB), and a fixed toroidal magnetic field which is scanned through several plasma discharges. The tail temperature of the protons, which is evaluated in the range 0.32-0.86 MeV, has been observed to increase in the second to third harmonics, however increase of the tail temperature in the third to fourth harmonics has not been observed clearly. Furthermore, the dependence of tail temperature on the harmonic number has been found to be in qualitative agreement with results from a simulation code analysis based upon the one-dimensional Fokker-Planck equation coupled with the kinetic wave equation. Experimental values for the stored energy of the accelerated ions have shown, however, that the response of stored energy to changes in absorbed ICRF power is much stronger than the response to changes in harmonic number. Also, the incremental energy confinement times for heating discharges matching the third and fourth harmonics (3 ω CH) and 4 ω CH) of hydrogen have been observed to be less than half that for those matching the second harmonic. It has been found that suppression of the absorbed ICRF power accompanied with the occurence of cavity resonance in the 3ω CH and 4ω CH heating discharges reduces the stored energy of the accelerated ions and the incremental energy confinement time. (Author)

  7. Elastic scattering of lithium by 9Be, 10B, 12C, 13C, 16O, and 28Si from 4 to 63 MeV

    International Nuclear Information System (INIS)

    Poling, J.E.; Norbeck, E.; Carlson, R.R.

    1976-01-01

    Elastic scattering angular distributions have been measured at energies between 4.0 and 13.0 MeV for 6 Li and 7 Li beams and targets of 10 B, 12 C, 13 C, 16 O, and 28 Si. Yield curves have been measured for energies from 3.0 to 13.0 MeV for 6 Li beams and targets of 9 Be, 12 C, 13 C, 16 O, and 28 Si, and for 7 Li and 12 C. The angular distributions, supplemented by published angular distributions, have been fitted with optical-model potentials. For 6 Li+ 12 C, angular distributions were available at energies from 4.5 to 63.0 MeV. Potentials which gave fits to the data across the entire available energy range were obtained for each elastic scattering reaction. The usual ambiguities were observed in the optical-model potentials. In certain cases the back angles were not well fitted by parameter sets which were useful for all energies. The quality of the fits did not seem to be limited by experimental errors, which were generally better than 10% for our data; compound nucleus effects are presumed to be the cause of rapid energy variations in the angular distributions

  8. Estimation of the depth resolution of secondary ion mass spectrometry at the interface SiO2/Si

    Science.gov (United States)

    Kocanda, J.; Fesič, V.; Veselý, M.; Breza, J.; Kadlečíková, M.

    1995-08-01

    Similarities between the processes that occur during sputtering of monocrystalline Si by reactive O2+ primary ions and the interface SiO2/monocrystalline Si by noble gas ions (e.g., by Ar+) have motivated us to utilize the semiempirical model of P. C. Zalm and C. J. Vriezema [Nucl. Instrum. Methods B 67, 495 (1992)], modified later by M. Petravić, B. G. Svensson, and J. S. Williams [Appl. Phys. Lett. 62, 278 (1993)] to calculate the decay length λb, as defined by J. B. Clegg [Surf. Interface Anal. 10, 322 (1987)], at the SiO2/Si interface. The measured and calculated results agree remarkably well. Inconsistency observed to be larger than 100% for glancing incidence angles confirms limitations of this model that were admitted already by its authors.

  9. Surface Morphologies of Ti and Ti-Al-V Bombarded by 1.0-MeV Au+ Ions

    Science.gov (United States)

    Garcia, M. A.; Rickards, J.; Cuerno, R.; Trejo-Luna, R.; Cañetas-Ortega, J.; de la Vega, L. R.; Rodríguez-Fernández, L.

    2017-12-01

    Ion implantation is known to enhance the mechanical properties of biomaterials such as, e.g., the wear resistance of orthopedic joints. Increasing the surface area of implants may likewise improve their integration with, e.g., bone tissue, which requires surface features with sizes in the micron range. Ion implantation of biocompatible metals has recently been demonstrated to induce surface ripples with wavelengths of a few microns. However, the physical mechanisms controlling the formation and characteristics of these patterns are yet to be understood. We bombard Ti and Ti-6Al-4V surfaces with 1.0-MeV Au+ ions. Analysis by scanning electron and atomic force microscopies shows the formation of surface ripples with typical dimensions in the micron range, with potential indeed for biomedical applications. Under the present specific experimental conditions, the ripple properties are seen to strongly depend on the fluence of the implanted ions while being weakly dependent on the target material. Moreover, by examining experiments performed for incidence angle values θ =8 ° , 23°, 49°, and 67°, we confirm the existence of a threshold incidence angle for (ripple) pattern formation. Surface indentation is also used to study surface features under additional values of θ , agreeing with our single-angle experiments. All properties of the surface structuring process are very similar to those found in the production of surface nanopatterns under low-energy ion bombardment of semiconductor targets, in which the stopping power is dominated by nuclear contributions, as in our experiments. We consider a continuum model that combines the effects of various physical processes as originally developed in that context, with parameters that we estimate under a binary-collision approximation. Notably, reasonable agreement with our experimental observations is achieved, even under our high-energy conditions. Accordingly, in our system, ripple formation is determined by mass

  10. Relaxation of mechanical stresses in Si-Ge/Si structures implanted by carbon ions. Study with optical methods

    International Nuclear Information System (INIS)

    Klyuj, M.Yi.

    1998-01-01

    Optical properties of Si-Ge/Si structures implanted by carbon ions with the energy of 20 keV and at the doses of 5 centre dot 10 15 - 1- 16 cm -2 are studied by spectro ellipsometry and Raman scattering techniques. From the comparison of experimental data with the results of theoretical calculations, it is shown that, as a result of implantation, a partial relaxation of mechanical stresses in the Si 1-x Ge x film due to introduction of carbon atoms with a small covalent radius into the Si-Ge lattice takes place. An elevated implantation temperature allows one to maintain a high structural perfection of the implanted film

  11. Evidence for nano-Si clusters in amorphous SiO anode materials for rechargeable Li-ion batteries

    International Nuclear Information System (INIS)

    Sepehri-Amin, H.; Ohkubo, T.; Kodzuka, M.; Yamamura, H.; Saito, T.; Iba, H.; Hono, K.

    2013-01-01

    Atom probe tomography and high resolution transmission electron microscopy have shown the presence of nano-sized amorphous Si clusters in non-disproportionated amorphous SiO powders are under consideration for anode materials in Li-ion batteries. After Li insertion/extraction, no change was found in the chemistry and structure of the Si clusters. However, Li atoms were found to be trapped at the amorphous SiO phase after Li insertion/extraction, which may be attributed to the large capacity fade after the first charge/discharge cycle

  12. Effects of 6 MeV electron irradiation on the electrical properties and device parameters of Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si MOS capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Laha, P.; Banerjee, I.; Barhai, P.K. [Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi 835215 (India); Das, A.K. [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Mumbai 400085 (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Ganeshkhind, Pune 411007 (India); Mahapatra, S.K., E-mail: skm@physics.ucla.edu [Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi 835215 (India)

    2012-07-15

    Highlights: Black-Right-Pointing-Pointer The electron irradiation effects make variation in the device parameters. Black-Right-Pointing-Pointer The device parameters changes due to percentage of defects and charge trapping. Black-Right-Pointing-Pointer Leakage current of Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si changes due to interface dangling bonds. Black-Right-Pointing-Pointer The leakage current mechanism of MOS structures is due to Poole-Frenkel effect. - Abstract: The effects of 6 MeV electron irradiation on the electrical properties and device parameter characteristics of Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si metal-oxide-semiconductor capacitors have been studied. Twelve Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si MOS capacitors were fabricated using r.f. magnetron sputtering and divided into four groups. The first group was not irradiated and treated as virgin. The rest were irradiated with 6 MeV electrons at doses 10, 20, and 30 kGy, maintaining the dose rate at {approx}1 kGy/min. Variations in crystallinity of the virgin and irradiated capacitors were studied using grazing incident X-ray diffraction. The thickness and in-depth elemental distributions of individual layers were determined using secondary ion mass apectrometry. Capacitance-voltage, conductance-voltage and leakage current-voltage characteristics of the virgin and irradiated samples were studied. The device parameters (flat band voltage, surface charge density and interface trap density of the virgin and irradiated structures) were determined. The electrical properties of the capacitors were investigated and the Poole-Frenkel coefficient of the capacitors was determined from leakage current measurements. The leakage current mechanism has been explained.

  13. Effects of 6 MeV electron irradiation on the electrical properties and device parameters of Al/Al2O3/TiO2/n-Si MOS capacitors

    International Nuclear Information System (INIS)

    Laha, P.; Banerjee, I.; Barhai, P.K.; Das, A.K.; Bhoraskar, V.N.; Mahapatra, S.K.

    2012-01-01

    Highlights: ► The electron irradiation effects make variation in the device parameters. ► The device parameters changes due to percentage of defects and charge trapping. ► Leakage current of Al/Al 2 O 3 /TiO 2 /n-Si changes due to interface dangling bonds. ► The leakage current mechanism of MOS structures is due to Poole–Frenkel effect. - Abstract: The effects of 6 MeV electron irradiation on the electrical properties and device parameter characteristics of Al/Al 2 O 3 /TiO 2 /n-Si metal–oxide–semiconductor capacitors have been studied. Twelve Al/Al 2 O 3 /TiO 2 /n-Si MOS capacitors were fabricated using r.f. magnetron sputtering and divided into four groups. The first group was not irradiated and treated as virgin. The rest were irradiated with 6 MeV electrons at doses 10, 20, and 30 kGy, maintaining the dose rate at ∼1 kGy/min. Variations in crystallinity of the virgin and irradiated capacitors were studied using grazing incident X-ray diffraction. The thickness and in-depth elemental distributions of individual layers were determined using secondary ion mass apectrometry. Capacitance–voltage, conductance–voltage and leakage current–voltage characteristics of the virgin and irradiated samples were studied. The device parameters (flat band voltage, surface charge density and interface trap density of the virgin and irradiated structures) were determined. The electrical properties of the capacitors were investigated and the Poole–Frenkel coefficient of the capacitors was determined from leakage current measurements. The leakage current mechanism has been explained.

  14. IBC c-Si solar cells based on ion-implanted poly-silicon passivating contacts

    NARCIS (Netherlands)

    Yang, G.; Ingenito, A.; Isabella, O.; Zeman, M.

    2016-01-01

    Ion-implanted poly-crystalline silicon (poly-Si), in combination with a tunnel oxide layer, is investigated as a carrier-selective passivating contact in c-Si solar cells based on an interdigitated back contact (IBC) architecture. The optimized poly-Si passivating contacts enable low interface

  15. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Ozcan, Ahmet S., E-mail: asozcan@us.ibm.com [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Lavoie, Christian; Jordan-Sweet, Jean [IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598 (United States); Alptekin, Emre; Zhu, Frank [IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533 (United States); Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M. [TEL Epion Inc., 900 Middlesex Turnpike, Bldg. 6, Billerica, Massachusetts 01821 (United States)

    2016-04-21

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  16. Simulation of the channelling of ions from MeV C60 in crystalline solids

    International Nuclear Information System (INIS)

    Fetterman, A; Sinclair, L; Tanushev, N; Tombrello, T; Nardi, E

    2007-01-01

    Simulations were performed describing the motion and breakup of energetic C 60 ions interacting with crystalline targets. A hybrid algorithm was used that employs a binary collision model for the scattering of the carbon ions by the atoms of the solid, and molecular dynamics for the Coulomb interactions of the 60 carbon ions with one another. For the case of yttrium iron garnet (YIG), directions such as [1 1 0], [1 0 0], [0 1 0] and [0 0 1] demonstrate channelling for a large fraction of the C ions. For directions such as [1 1 1], [2 1 1] and [7 5 3] the trajectories show no more channelling than for random directions. The effects of tilt, shielding and wake-field interactions were investigated for YIG and α-quartz

  17. Energy dependence of isovector and isoscalar 1+ excitations in 28Si(p,p/sup '/) between 200 and 400 MeV

    International Nuclear Information System (INIS)

    Haeusser, O.; Sawafta, R.; Jeppesen, R.G.

    1988-01-01

    Forward-angle cross sections for 1 + , T = 1 and 1 + , T = 0 states in 28 Si excited by the (p,p') reaction have been measured to determine the energy dependence of important pieces of the effective nucleon-nucleus interaction. The isovector spin-transfer transitions depend on energy as expected from distorted-wave impulse approximation calculations based on the dominant V/sub Σ//sub tau/ part of the Franey-Love interaction. The parts of this interaction responsible for exciting the 9.5 MeV isosca- lar spin-flip transition predict a weaker energy dependence than is observed experimentally. The summed Gamow-Teller strength for isovector transitions below 14.5 MeV is found to be (0.89 +- 0.09) times the result of large-scale shell model calculations

  18. Radiation-induced effects in MgO single crystal by 200 keV and 1 MeV Ni ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, Ryohei; Nakai, Yoshihiro; Hamaguchi, Dai [Kyoto Inst. of Tech. (Japan); and others

    1997-03-01

    MgO(100) single crystals were implanted with 1.0 MeV and 200 keV Ni ions between 10{sup 15} and 10{sup 17} ions/cm{sup 2} at room temperature. Before and after thermal annealing the radiation damage and the lattice location of implanted Ni ions were analyzed by using Rutherford backscattering spectrometry with channeling and optical absorption measurements. For 1.0 MeV Ni ions, the disorder of Mg atoms increased slowly with ion dose near surface region, while it increased sharply and saturated with ion dose from 2x10{sup 16} ions/cm{sup 2} near ion range. The radiation damage was recovered and implanted Ni ions diffused to the whole of crystal and occupied substitutional positions after 1400degC annealing. For 200 keV Ni ions, the disorder of Mg atoms increased with dose near ion range and had a maximum at about 5x10{sup 16} ions/cm{sup 2}. This tendency agrees with the behavior of color centers obtained from optical measurements. For thermal annealing the radiation damage did not change during 500degC annealing, but the aggregate centers appeared after 300degC annealing. (author)

  19. L-subshell ionization studies in Au and Bi for 19F and 28Si large-ion bombardment

    International Nuclear Information System (INIS)

    Padhi, H.C.; Dhal, B.B.; Nanal, V.; Prasad, K.G.; Tandon, P.N.; Trautmann, D.

    1996-01-01

    L x-ray production and subshell ionization cross sections of Au and Bi have been measured for the bombardment of 19 F and 28 Si ions in the energy range 30 endash 57 MeV and 36 endash 84 MeV, respectively. Comparison of the Lα x-ray production cross sections of Au with the earlier data by Malhi and Gray [Phys. Rev. A 44, 7199 (1991)] shows reasonable agreement for 19 F impact and their data are consistently higher for 28 Si at all energies. The measured Lα line energy shows a shift towards higher energy, which appears to be proportional to the square of the projectile atomic number at all impact energies. This shift suggests the presence of multiple ionization in the L and M shells with a simultaneous production of four M holes in Au at the impact energy of 3 MeVu -1 of 28 Si. The L-subshell ionization cross sections obtained from the measured x-ray production cross sections have been compared with the semiclassical approximation and perturbed stationary state theory with energy loss, Coulomb deflection, and relativistic correction for the electron motion calculations, which show large deviations for the L 1 subshell. The L 2 - and L 3 -subshell ionization cross sections are underestimated by both the theories by a factor of 1.2 endash 4.0 for 28 Si impact whereas for the 19 F case there is reasonable agreement for the L 3 cross section but the L 2 cross section is underestimated by 20 endash 30%. copyright 1996 The American Physical Society

  20. Polypropylene compositional evolution under 3.5 MeV He{sup +} ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Abdesselam, M., E-mail: abdesselam_m@yahoo.fr [Faculte de Physique, USTHB, BP32, El Alia, 16111 BEZ (Algeria); Muller, D. [InESS, UMR7163, 23 rue du Loess, BP20, F-67037 Strasbourg Cedex 02 (France); Djebara, M.; Chami, A.C. [Faculte de Physique, USTHB, BP32, El Alia, 16111 BEZ (Algeria); Montgomery, P. [InESS, UMR7163, 23 rue du Loess, BP20, F-67037 Strasbourg Cedex 02 (France)

    2012-05-01

    A helium beam at 3.5 MeV was used to induce damage in thin polypropylene film of 5.1 {mu}m in thickness. The fluence ranges from 2 Multiplication-Sign 10{sup 12} to 3.5 Multiplication-Sign 10{sup 15} cm{sup -2}. The evolution of the atomic composition (C and H) as a function of the fluence was investigated in situ by forward elastic scattering (C({alpha}, {alpha})C) and hydrogen elastic recoil detection (H({alpha}, H){alpha}), respectively. The helium beam was used at the same time for irradiation and analysis. In respect to the high sensitivity of the polypropylene to radiation damage, the beam current was kept at very low intensity of 0.5 nA. The mass loss becomes significant above a fluence of {approx}5 Multiplication-Sign 10{sup 13} He{sup +} cm{sup -2}. The carbon depletion levels off at a fluence of {approx}5 Multiplication-Sign 10{sup 14} He{sup +} cm{sup -2} approximately while hydrogen loss continues to be present along the whole of the studied fluence range. The final carbon and hydrogen losses, at the highest fluence, are around 17% and 48% of their initial contents, respectively. Satisfactory fits to the release curves have been obtained in the framework of the bulk molecular recombination model (BMR). The deduced hydrogen and carbon release cross sections are 7.8 and 65.2 Multiplication-Sign 10{sup -16} cm{sup 2}, respectively. A comparison with our previous measurements of polyethylene terephthalate (PET) film irradiated with 3.7 MeV He{sup +} beam is made.

  1. Polypropylene compositional evolution under 3.5 MeV He+ ion irradiation

    International Nuclear Information System (INIS)

    Abdesselam, M.; Muller, D.; Djebara, M.; Chami, A.C.; Montgomery, P.

    2012-01-01

    A helium beam at 3.5 MeV was used to induce damage in thin polypropylene film of 5.1 μm in thickness. The fluence ranges from 2 × 10 12 to 3.5 × 10 15 cm −2 . The evolution of the atomic composition (C and H) as a function of the fluence was investigated in situ by forward elastic scattering (C(α, α)C) and hydrogen elastic recoil detection (H(α, H)α), respectively. The helium beam was used at the same time for irradiation and analysis. In respect to the high sensitivity of the polypropylene to radiation damage, the beam current was kept at very low intensity of 0.5 nA. The mass loss becomes significant above a fluence of ∼5 × 10 13 He + cm −2 . The carbon depletion levels off at a fluence of ∼5 × 10 14 He + cm −2 approximately while hydrogen loss continues to be present along the whole of the studied fluence range. The final carbon and hydrogen losses, at the highest fluence, are around 17% and 48% of their initial contents, respectively. Satisfactory fits to the release curves have been obtained in the framework of the bulk molecular recombination model (BMR). The deduced hydrogen and carbon release cross sections are 7.8 and 65.2 × 10 −16 cm 2 , respectively. A comparison with our previous measurements of polyethylene terephthalate (PET) film irradiated with 3.7 MeV He + beam is made.

  2. Polypropylene compositional evolution under 3.5 MeV He+ ion irradiation

    Science.gov (United States)

    Abdesselam, M.; Muller, D.; Djebara, M.; Chami, A. C.; Montgomery, P.

    2012-05-01

    A helium beam at 3.5 MeV was used to induce damage in thin polypropylene film of 5.1 μm in thickness. The fluence ranges from 2 × 1012 to 3.5 × 1015 cm-2. The evolution of the atomic composition (C and H) as a function of the fluence was investigated in situ by forward elastic scattering (C(α, α)C) and hydrogen elastic recoil detection (H(α, H)α), respectively. The helium beam was used at the same time for irradiation and analysis. In respect to the high sensitivity of the polypropylene to radiation damage, the beam current was kept at very low intensity of 0.5 nA. The mass loss becomes significant above a fluence of ˜5 × 1013 He+ cm-2. The carbon depletion levels off at a fluence of ˜5 × 1014 He+ cm-2 approximately while hydrogen loss continues to be present along the whole of the studied fluence range. The final carbon and hydrogen losses, at the highest fluence, are around 17% and 48% of their initial contents, respectively. Satisfactory fits to the release curves have been obtained in the framework of the bulk molecular recombination model (BMR). The deduced hydrogen and carbon release cross sections are 7.8 and 65.2 × 10-16 cm2, respectively. A comparison with our previous measurements of polyethylene terephthalate (PET) film irradiated with 3.7 MeV He+ beam is made.

  3. Properties of ion implanted epitaxial CoSi2/Si(1 0 0) after rapid thermal oxidation

    International Nuclear Information System (INIS)

    Zhao, Q.T.; Kluth, P.; Xu, J.; Kappius, L.; Zastrow, U.; Wang, Z.L.; Mantl, S.

    2000-01-01

    Epitaxial CoSi 2 layers were grown on Si(1 0 0) using molecular beam allotaxy. Boron ion implantations and rapid thermal oxidation (RTO) were performed. During oxidation, SiO 2 formed on the surface of the CoSi 2 layers, and the silicides was pushed into the substrate. The diffusion of boron was slightly retarded during oxidation for the specimen with a 20 nm epitaxial CoSi 2 capping layer as compared to the specimen without CoSi 2 capping layer. The electrical measurements showed that the silicide has good Schottky contacts with the boron doped silicon layer after RTO. A nanometer silicide patterning process, based on local oxidation of silicide (LOCOSI) layer, was also investigated. It shows two back-to-back Schottky diodes between the two separated parts of the silicide

  4. Structural and electrical characterization of ion beam synthesized and n-doped SiC layers

    Energy Technology Data Exchange (ETDEWEB)

    Serre, C.; Perez-Rodriguez, A.; Romano-Rodriguez, A.; Morante, J.R. [Barcelona Univ. (Spain). Dept. Electronica; Panknin, D.; Koegler, R.; Skorupa, W. [Forschungszentrum Rossendorf, Dresden (Germany); Esteve, J.; Acero, M.C. [CSIC, Bellaterra (Spain). Centre Nacional de Microelectronica

    2001-07-01

    This work reports preliminary data on the ion beam synthesis of n-doped SiC layers. For this, two approaches have been studied: (i) doping by ion implantation (with N{sup +}) of ion beam synthesized SiC layers and (ii) ion beam synthesis of SiC in previously doped (with P) Si wafers. In the first case, the electrical data show a p-type overcompensation of the SiC layer in the range of temperatures between -50 C and 125 C. The structural (XRD) and in-depth (SIMS, Spreading Resistance) analysis of the samples suggest this overcompensation to be induced by p-type active defects related to the N{sup +} ion implantation damage, and therefore the need for further optimization their thermal processing. In contrast, the P-doped SiC layers always show n-type doping. This is also accompanied by a higher structural quality, being the spectral features of the layers similar to those from the not doped material. Electrical activation of P in the SiC lattice is about one order of magnitude lower than in Si. These data constitute, to our knowledge, the first results reported on the doping of ion beam synthesized SiC layers. (orig.)

  5. Effect of 100 MeV swift heavy ions [silver (Ag8+)] on morphological and electrical properties of polypyrrole

    Science.gov (United States)

    Kaur, Amarjeet; Dhillon, Anju; Avasthi, D. K.

    2009-10-01

    Polypyrrole (PPY) films were prepared by the electrochemical polymerization technique. The fully undoped samples were irradiated with different fluences ranging from 1010 to 1012 ions/cm2 of 100 MeV silver (Ag8+) ions. In order to explain the effect of these radiations, a comparative study of samples before and after irradiation was performed by using various techniques such as surface electron microscopy, atomic force microscopy, and X-ray diffraction. With an increase in fluence, the surface structure of PPY films becomes smoother, and the conductivity increases by two orders, which has been explained in light of reordering of polymer chains. The temperature dependence of the dc conductivity of irradiated as well as unirradiated samples has been investigated at 77-300 K. The charge transport properties before and after irradiation are retained although conductivity increases. It has been proposed that swift heavy ion irradiation affects the interchain conductivity. The conductivity of irradiated samples is stable under atmospheric conditions for more than 9 months. The present investigations open up the scope for the applicability of irradiated conducting polymers as microstructures with defined conductivity for sensor applications.

  6. Effect of 100 MeV swift heavy ions [silver (Ag8+)] on morphological and electrical properties of polypyrrole

    International Nuclear Information System (INIS)

    Kaur, Amarjeet; Dhillon, Anju; Avasthi, D. K.

    2009-01-01

    Polypyrrole (PPY) films were prepared by the electrochemical polymerization technique. The fully undoped samples were irradiated with different fluences ranging from 10 10 to 10 12 ions/cm 2 of 100 MeV silver (Ag 8+ ) ions. In order to explain the effect of these radiations, a comparative study of samples before and after irradiation was performed by using various techniques such as surface electron microscopy, atomic force microscopy, and X-ray diffraction. With an increase in fluence, the surface structure of PPY films becomes smoother, and the conductivity increases by two orders, which has been explained in light of reordering of polymer chains. The temperature dependence of the dc conductivity of irradiated as well as unirradiated samples has been investigated at 77-300 K. The charge transport properties before and after irradiation are retained although conductivity increases. It has been proposed that swift heavy ion irradiation affects the interchain conductivity. The conductivity of irradiated samples is stable under atmospheric conditions for more than 9 months. The present investigations open up the scope for the applicability of irradiated conducting polymers as microstructures with defined conductivity for sensor applications.

  7. Three-dimensional recoil-ion momentum analyses in 8.7 MeV O7+-He collisions

    International Nuclear Information System (INIS)

    Kambara, T.; Tang, J.Z.; Awaya, Y.

    1995-01-01

    Using high-resolution recoil-ion momentum spectroscopy we have measured the differential cross sections of single-electron capture and target single-ionization processes for 8.7 MeV O 7+ -He collisions as functions of scattering angle. A transverse momentum resolution of ±0.2 au, which corresponds to an angular resolution of about ±1.5x10 -6 rad for the projectile scattering angle, was obtained by intersecting a well collimated O 7+ beam with a target of a supersonic He jet from a pre-cooled gas and by measuring the recoil-ion transverse momentum. For the single capture reaction, information on the n-value of the electron final state in O 6+ (1snl) is obtained from the longitudinal momentum of the recoil ions. In pure single-electron capture, the dominant contributions to capture were found to be those from the n=4 and higher states, whereas single capture accompanied by the ionization of the second target electron mainly populates n=2 to n=4 states. Furthermore, the measured transverse momentum distribution differs significantly between pure single capture and capture with simultaneous ionization. The measured data for the pure capture process compare favourably with theoretical results based on a molecular-state expansion method. Other experimental data are discussed in terms of the classical overbarrier model. (author)

  8. Augmentation of thermoelectric performance of VO2 thin films irradiated by 200 MeV Ag9+-ions

    International Nuclear Information System (INIS)

    Khan, G.R.; Kandasami, A.; Bhat, B.A.

    2016-01-01

    Swift Heavy Ion (SHI) irradiation with 200 MeV Ag 9+ -ion beam at ion fluences of 1E11, 5E11, 1E12, and 5E12 for tuning of electrical transport properties of VO 2 thin films fabricated by so–gel technique on alumina substrates has been demonstrated in the present paper. The point defects created by SHI irradiation modulate metal to insulator phase transition temperature, carrier concentration, carrier mobility, electrical conductivity, and Seebeck coefficient of VO 2 thin films. The structural properties of the films were characterized by XRD and Raman spectroscopy and crystallite size was found to decrease upon irradiation. The atomic force microscopy revealed that the surface roughness of specimens first decreased and then increased with increasing fluence. Both resistance as well as Seebeck coefficient measurements demonstrated that all the samples exhibit metal–insulator phase transition and the transition temperatures decreases with increasing fluence. Hall effect measurements exhibited that carrier concentration increased continuously with increasing fluence which resulted in an increase of electrical conductivity by several orders of magnitude in the insulating phase. Seebeck coefficient in insulating phase remained almost constant in spite of an increase in the electrical conductivity by several orders of magnitude making SHI irradiation an alternative stratagem for augmentation of thermoelectric performance of the materials. The carrier mobility at room temperature decreased up to the beam fluence of 5E11 and then started increasing whereas Seebeck coefficient in metallic state first increased with increasing ion beam fluence up to 5E11 and thereafter decreased. Variation of these electrical transport parameters has been explained in detail. - Highlights: • Thermoelectric properties of VO 2 thin films enhance upon SHI irradiation. • Structural properties show that crystallite size decrease upon SHI irradiation. • Metal–insulator phase

  9. Comparison between thermal annealing and ion mixing of multilayered Ni-W films on Si. II

    International Nuclear Information System (INIS)

    Pai, C.S.; Lau, S.S.; Poker, D.B.; Hung, L.S.

    1985-01-01

    The reactions between bilayered Ni/W films and Si substrates induced by thermal annealing and ion mixing were investigated and compared. Samples were prepared by electron-beam sequential deposition of Ni and W onto the Si substrates and following by either furnace annealing (approx. 200--900 0 C) or ion mixing (approx. 2 x 10 15 -- 4 x 10 16 86 Kr + ions/cm 2 ). The reactions were analyzed by Rutherford backscattering and x-ray diffraction (Read camera). Thermal annealing of both W/Ni/Si and Ni/W/Si samples led to the formation of Ni silicide next to the Si substrate and W silicide on the sample surface (layer reversal between Ni and W in the Ni/W/Si case). Ion mixing of W/Ni/Si samples led to the formation of Ni silicide with a thin layer of Ni-W-Si mixture located at the sample surface. For Ni/W/Si samples a ternary amorphous mixture of Ni-W-Si was obtained with ion mixing. These reactions were rationalized in terms of the mobilities of various atoms and the intermixings between layers

  10. Site of Er ions in silica layers codoped with Si nanoclusters and Er

    International Nuclear Information System (INIS)

    Pellegrino, P.; Garrido, B.; Arbiol, J.; Garcia, C.; Lebour, Y.; Morante, J.R.

    2006-01-01

    Silica layers implanted with Si and Er ions to various doses and annealed at 950 deg. C have been investigated by means of energy-filtered transmission electron microscopy (EFTEM) and high annular angle dark field (HAADF). EFTEM analysis reveals Si nanoclusters (Si-nc) with an average size around 3 nm for high Si content (15 at. %) whereas no clusters can be imaged for the lowest Si excess (5 at. %). Raman scattering supports that amorphous Si precipitates are present in all the samples. Moreover, the filtered images show that Er ions appear preferentially located outside the Si-nc. HAADF analysis confirms that the Er atoms form agglomerations of 5-10 nm size when the Er concentration exceeds 1x10 20 cm -3 . This observation correlates well with the reduction of the Er population excitable by Si nanoclusters, in the best case corresponding to 10% of the total. A suitable tuning of the annealing drastically reduces this deleterious effect

  11. QMD simulation of multifragment production in heavy ion collisions at E/A=600 MeV

    International Nuclear Information System (INIS)

    Begemann-Blaich, M.; Mueller, W.F.J.; Aichelin, J.; Hubele, J.; Imme, G.; Leray, S.; Lindenstruth, V.; Liu, Z.; Lynen, U.; Meijer, R.J.; Milkau, U.; Moroni, A.; Ogilvie, C.A.; Pochodzalla, J.; Raciti, G.; Schuettauf, A.; Stuttge, L.; Tucholski, A.

    1993-04-01

    With the ALADIN forward spectrometer the fragmentation of gold nuclei at 600 MeV per nucleon after interaction with carbon, aluminum, copper and lead targets has been investigated. The results are compared to quantum-molecular-dynamics calculations using soft and hard equations of state as well as soft equation of state with momentum dependent forces. Whereas the QMD has been successfully applied to heavy ion collisions at lower energies, it is not possible to reproduce the fragment distributions and the light particle multiplicities observed in this experiment at relativistic energies. To study the reasons for the discrepancy between the experimental data and the simulations, we investigated the time evolution of the nuclear system after a collision and the disintegration pattern of excited nuclei in the QMD approach. (orig.). 9 figs

  12. Coincidence measurements of slow recoil ions with projectile ions in 42-MeV Arq+-Ar collisions

    International Nuclear Information System (INIS)

    Tonuma, T.; Kumagai, H.; Matsuo, T.; Tawara, H.

    1989-01-01

    Slow Ar recoil-ion production cross sections by projectiles of 1.05-MeV/amu Ar q+ (q=4,6,8,10,12,14) were measured using a projectile-ion--recoil-ion coincidence technique. The present results indicate that the average recoil ion charges left-angle i right-angle increase with increasing the incident projectile charge q and the number of the lost and captured electrons from and/or into projectiles, whereas the projectile charge-changing cross sections for loss ionization decrease steeply with increasing q for low-charge-state projectiles, and those for transfer ionization increase rapidly with increasing q for high-charge-state projectiles. For Ar projectiles with q=10, which corresponds to the equilibrium charge state of Ar projectiles at the present collision energy, the average recoil-ion charges are nearly the same in both loss and transfer ionization, and a pure ionization process plays a much more important role in producing highly charged recoil ions, in contrast to projectile electron loss or transfer processes, which play a role in other projectile charge states

  13. Fundamentals and applications of heavy ion collisions below 10 MeV/ nucleon energies

    CERN Document Server

    Prasad, R

    2018-01-01

    An up-to-date text, covering the concept of incomplete fusion (ICF) in heavy ion (HI) interactions at energies below 10 MeV/nucleon. Important concepts including the exciton model, the Harp Miller and Berne model, Hybrid model, Sum rule model, Hot spot model and promptly emitted particles model are covered in depth. It studies the ICF and PE-emission in heavy ion reactions at low energies using off-beam and in-beam experimental techniques. Theories of complete fusion (CF) of heavy ions based on Compound Nucleus (CN) mechanism of statistical nuclear reactions, details of the Computer code PACE4 based on CN mechanism, pre-equilibrium (PE) emission, modeling of (ICF) and their limits of application are discussed in detail.

  14. Influence of annealing temperature on erbium ion electroluminescence in Si : (Er,O) diodes with (111) substrate orientation

    CERN Document Server

    Sobolev, N A; Nikolaev, Y A

    2001-01-01

    A study has been made of the influence of temperature of the second annealing that promotes formation of optically and electrically active centers o the erbium ion electroluminescence at lambda approx = 1.54 mu m wavelength in (111) Si : (Er,O) diodes. Doping has been performed by implantation of erbium and oxygen ions at 2.0, 1.6 MeV and 0.28, 0.22 MeV energies and 3 x 10 sup 1 sup 4 cm sup - sup 2 and 3 x 10 sup 1 sup 5 cm sup - sup 2 doses, respectively. The room temperature electroluminescence intensity under the breakdown regime increases with increasing annealing temperature from 700 to 950 deg C. After annealing in the range of 975-1100 deg C, erbium electroluminescence under the breakdown regime is not observed due to appearance of microplasmas. The injection electroluminescence intensity at 80 K decreases with increasing temperature from 700 to 1100 deg C

  15. Si@SiOx/Graphene nanosheet anode materials for lithium-ion batteries synthesized by ball milling process

    Science.gov (United States)

    Tie, Xiaoyong; Han, Qianyan; Liang, Chunyan; Li, Bo; Zai, Jiantao; Qian, Xuefeng

    2017-12-01

    Si@SiOx/Graphene nanosheet (GNS) nanocomposites as high performance anode materials for lithium-ion batteries are synthesized by mechanically blending the mixture of expanded graphite with Si nanoparticles, and characterized by X-ray diffraction, Raman spectrum, field emission scanning electron microscopy and transmission electron microscopy. During the ball milling process, the size of Si nanoparticles will decrease, and the layer of expanded graphite can be peeled off to thin multilayers. Electrochemical performances reveal that the obtained Si@SiOx/GNS nanocomposites exhibit improved cycling stability, high reversible lithium storage capacity and superior rate capability, e.g. the discharge capacity is kept as high as 1055 mAh g-1 within 50 cycles at a current density of 200 mA g-1, retaining 63.6% of the initial value. The high performance of the obtained nanocomposites can be ascribed to GNS prepared through heat-treat and ball-milling methods, the decrease in the size of Si nanoparticles and SiOx layer on Si surface, which enhance the interactions between Si and GNS.

  16. Investigation of states in 30P via the 30Si(3He,t)30P reaction at 30 MeV

    International Nuclear Information System (INIS)

    Ramstein, B.; Rosier, L.H.; Paris-11 Univ., 91 - Orsay; Meijer, R.J. de

    1981-01-01

    The 30 Si( 3 He,t) 30 P reaction has been measured for about 100 levels in 30 P with Esub(x)<8.8 MeV. Little selectivity in the population of states has been observed. For 75 levels angular distributions have been analysed using a 'fingerprint method' by determining the L-value from a comparison in shape with transition to states with known Jsup(π). For possible mixed L-transitions a dominance of the higher L-value is observed for almost all cases. Coulomb displacement energy calculations utilizing shell-model wave functions have been used to identify T=1 states

  17. Spectroscopy of the {sup 29}Si(p,{gamma}) reaction for E{sub p}=1.00{endash}1.75 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Vavrina, G.A.; Bybee, C.R.; Mitchell, G.E.; Moore, E.F.; Shriner, J.D. [North Carolina State University, Raleigh, North Carolina 27695 (United States); Bilpuch, E.G.; Wallace, P.M.; Westerfeldt, C.R. [Duke University, Durham, North Carolina 27708 (United States); Shriner, J.F. , Jr. [Tennessee Technological University, Cookeville, Tennessee 38505 (United States)

    1997-03-01

    The {sup 29}Si(p,{gamma}) reaction has been studied in the range E{sub p}=1.00{endash}1.75 MeV. Three previously unknown states in {sup 30}P were identified, and one state previously assigned to {sup 30}P was identified as a state in {sup 14}N. Gamma-ray strengths were determined for the three new levels, and branching ratios were measured for 17 resonances. Revised J{sup {pi}};T assignments were made for nine of these states. {copyright} {ital 1997} {ital The American Physical Society}

  18. Cross sections measurements for the forward elastic scattering of 13 MeV 6,7 Li and 24 MeV 16 O by 9 Be, 12 C, 16 O and 28 Si

    International Nuclear Information System (INIS)

    Liendo, J.A.; Gonzalez, A.C.; Fletcher, N.R.; Caussyn, D.D.

    2001-01-01

    Full text: Absolute elastic cross sections have been measured for targets of 9 Be, 12 C 16 O, 28 Si and 197 Au being bombarded by beams of 13 MeV 6 7 Li and 24 MeV 16 O. The relevant yields were collected simultaneously at 12.450, 16.450, 20.450 and 280. The confidence of a forward elastic scattering method proposed previously to carry out multi-elemental analysis of evaporated liquid samples depends on the precision and accuracy of the cross sections reported in this work.The 24 MeV 16 0 + 197 Au reaction was used to determine the detector solid angles with uncertainties of approximately 3%. Some of the 16 O-beam reactions Some of the 16 O beam reactions have been shown to be consistent with the Rutherford formula predictions at several angles. This allowed us to obtain target thickness independent cross sections for the lithium beam initiated reactions with uncertainties close to 7%. In general, the 6 7 Li-beam reaction cross sections were found not to be consistent with the Coulomb scattering formula. In order to test the internal consistency of our measured cross sections, they were used to determine the elemental densities of several selected targets containing beryllium, carbon, oxygen and silicon. These targets were bombarded with the same beam types and energies used to measure the cross sections and, for every element of interest contained in each target, elemental density values were obtained at some of the scattering angles quoted above. Agreements between some of our results and those of a previous work support the validity of our measurements. (Author)

  19. Measurement of omega, the energy required to create an ion pair, for 150-MeV protons in nitrogen and argon

    International Nuclear Information System (INIS)

    Petti, P.L.

    1985-01-01

    The purpose of this thesis is to provide a 1% measurement of omega, the energy required to produce an ion pair, for 150 MeV protons in various gases. Such a measurement should improve the accuracy of proton ionization chamber dosimetry at the Harvard Cyclotron Laboratory. Currently, no measurements of omega exist in the energy range of 30 to 150 MeV, and present ionization chamber dosimetry at the Cyclotron relies on average values of measurements at lower and higher energies (i.e. for E < 3 MeV and E = 340 MeV). Contrary to theoretical expectations, these low and high energy data differ by as much as 9% in some gases. The results of this investigation demonstrate that the existing high energy data is probably in error, and current proton ionization chamber dosimetry underestimates omega, and hence the proton dose, by 5%

  20. Measurement and simulation of the effects of ion-induced defects on ion beam-induced charge (IBIC) measurements in Si schottky diodes

    International Nuclear Information System (INIS)

    Hearne, S.M.; Lay, M.D.H.; Jamieson, D.N.

    2004-01-01

    Full text: The Ion Beam Induced Charge (IBIC) technique is a very sensitive tool for investigating the electronic properties of semiconductor materials and devices. However, obtaining quantitative information from IBIC experiments requires an accurate model of the materials properties. The interaction of high energy ions with crystalline materials is known to create point defects within the crystal. A significant proportion of defects introduced by the interaction of the ion with the crystal are electrically active and are therefore an important consideration when undertaking an IBIC experiment. The goal of this work is to investigate the possibility of including the relevant defect parameters in computer simulations of the IBIC experiment implemented using Technology Computer Aided Design (TCAD) software. We will present the results from an IBIC study on Si Schottky diodes using 1 MeV alphas. A reduction of greater than 50% in the detected IBIC signal was observed for fluences greater than 5x10 10 He + /cm 2 . The trap parameters following ion irradiation were determined experimentally using DLTS. Comparisons between the experimental IBIC results and TCAD simulations will be discussed

  1. Effect of 50 and 80 MeV phosphorous ions on the contribution of interface and oxide state density in n-channel MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.S.; Dhole, S.D.; Kanjilal, D.; Bhoraskar, V.N. E-mail: vnb@physics.unipune.ernet.in

    1999-07-02

    n-channel depletion MOS devices were irradiated with 50 and 80 MeV phosphorous ions, with different fluences varying in the range from 10{sup 11} to 10{sup 13} ions/cm{sup 2}. The pre and post irradiation I-V characteristics were measured and the corresponding threshold shift {delta}V{sub TH} was estimated. In both the cases, the drain current I{sub D} and the threshold voltage V{sub TH} were found to decrease with the ion fluence. The increase in the threshold voltage shift {delta}V{sub TH} with the ion fluence, was greater for the devices irradiated with 80 MeV ions than those irradiated with 50 MeV ions. The interface and oxide state densities were determined through the subthreshold voltage measurements. To separate the contributions of oxide and interface states towards the threshold voltage shift, the ion irradiated MOS devices were annealed at 150 deg. C. The threshold shift during annealing initially decreased and later increased with increasing annealing period. The rate of change of the interface states during annealing was higher than that of the oxide states. It was also found that depletion mode (normally ON) MOSFETs switched operation to enhancement mode (normally OFF)

  2. 160 MeV Ni12+ ion irradiation effects on the structural, optical and electrical properties of spherical polypyrrole nanoparticles

    International Nuclear Information System (INIS)

    Hazarika, J.; Kumar, A.

    2014-01-01

    Highlights: • Upon SHI irradiation the average diameters of PPy nanoparticles increases. • Crystallinity of PPy nanoparticles increases with increasing ion fluence. • IR active vibrational bands have different cross sections for SHI irradiation. • Upon SHI irradiation optical band gap energy of PPy nanoparticles decreases. • Upon SHI irradiation thermal stability of PPy nanoparticles increases. -- Abstract: In this study we report 160 MeV Ni 12+ swift heavy ion irradiation induced enhancement in the structural, optical and electrical properties of spherical polypyrrole (PPy) nanoparticles. High resolution transmission electron microscope results show that the pristine PPy nanoparticles have an average diameter of 11 nm while upon irradiation the average diameter increases to 18 nm at the highest ion fluence of 1 × 10 12 ions/cm 2 . X-ray diffraction studies show an enhancement of crystallinity and average crystallite size of PPy nanoparticles with increasing fluence. Studies of Fourier transform infrared spectra suggest the structural modifications of different functional groups upon irradiation. It also reveals that different functional groups have different sensitivity to irradiation. The infrared active N–H vibrational band at 3695 cm −1 is more sensitive to irradiation with a formation cross-section of 5.77 × 10 −13 cm 2 and effective radius of 4.28 nm. The UV–visible absorption spectra of PPy nanoparticles show that the absorption band undergoes a red shift with increasing fluence. Moreover upon irradiation the optical band gap energy decreases and Urbach’s energy increases with fluence. Thermo-gravimetric analysis studies suggest that upon irradiation the thermal stability of PPy nanoparticles increases which may be attributed to their enhanced crystallinity. Current–voltage characteristics of PPy nanoparticles exhibit non-Ohmic, symmetric behavior which increases with fluence

  3. Density changes in amorphous Pd80Si20 during low temperature ion irradiation

    International Nuclear Information System (INIS)

    Schumacher, G.; Birtcher, R.C.; Rehn, L.E.

    1994-11-01

    Density changes in amorphous Pd 80 Si 20 during ion irradiation below 100K were detected by in situ HVEM measurements of the changes in specimen length as a function of ion fluence. A decrease in mass density as a function of the ion fluence was observed. The saturation value of the change in mass density was determined to be approximately -1.2%

  4. Synthesis of SiC decorated carbonaceous nanorods and its hierarchical composites Si@SiC@C for high-performance lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chundong [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China); Li, Yi, E-mail: liyi@suda.edu.cn [College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China); Ostrikov, Kostya [School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Brisbane, Queensland 4000 (Australia); Plasma Nanoscience, Industrial Innovation Program, CSIRO Manufacturing Flagship, Lindfield, New South Wales 2070 (Australia); Yang, Yonggang [College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Zhang, Wenjun, E-mail: apwjzh@cityu.edu.hk [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China)

    2015-10-15

    SiC- based nanomaterials possess superior electric, thermal and mechanical properties. However, due to the tricky synthesis process, which needs to be carried out under high temperature with multi-step reaction procedures, the further application is dramatically limited. Herein, a simple as well as a controllable approach is proposed for synthesis of SiC- based nanostructures under low temperature. Phenyl-bridged polysilsesquioxane was chosen as the starting material to react with magnesium at 650 °C, following which SiC@C nanocomposites were finally obtained, and it maintains the original bent rod-like architecture of polysilsesquioxanes. The possible formation process for the nanocomposites can proposed as well. The electrochemical behaviour of nanocomposites was accessed, verifying that the synthesized SiC@C nanocomposites deliver good electrochemical performance. Moreover, SiC@C also shows to be a promising scaffold in supporting Si thin film electrode in achieving stable cycling performance in lithium ion batteries. - Highlights: • SiC@C bent nanorods were synthesized with a magnesium reaction approach. • Carbon nanorod spines studded with ultrafine β-SiC nanocrystallines was realized. • The synthesized SiC@C keeps the original rod-like structure of polysilsesquioxanes. • The possible formation process for the nanocomposites was analysed and proposed. • Si@SiC@C nanocomposites reveal good electrochemical performance in LIBs.

  5. 160 MeV Ni{sup 12+} ion irradiation effects on the dielectric properties of polyaniline nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Hazarika, J.; Nath, Chandrani [Materials Research Laboratory, Department of Physics, Tezpur University, Tezpur 784028, Assam (India); Kumar, A., E-mail: ask@tezu.ernet.in [Materials Research Laboratory, Department of Physics, Tezpur University, Tezpur 784028, Assam (India)

    2012-10-01

    We report on the dielectric properties and a.c. conductivity studies of CSA doped polyaniline nanotubes. Nanotubes of 47-100 nm diameter, were synthesized by the self-assembly method and irradiated using Ni{sup 12+} ions of 160 MeV energy with fluences of 1 Multiplication-Sign 10{sup 10}, 5 Multiplication-Sign 10{sup 10}, 1 Multiplication-Sign 10{sup 11} and 3 Multiplication-Sign 10{sup 11} ions/cm{sup 2}. X-ray diffraction studies reveal an increase in the degree of crystallinity and consequently, the extent of order of the nanotubes with increasing fluence, but show a lower degree of crystallinity at higher fluence. The decrease in d-spacing for the (100) reflections with fluence is ascribed to the decrease in the tilt angle of the aligned polymer chains. A significant change was seen after irradiation in dielectric and electrical properties which may be correlated with the increased carrier concentration and structural modifications in the polymer films. The surface conductivity of films increases with increasing fluence, which also decreases at higher fluence. The a.c. conduction mechanism for the nanotubes could be explained in terms of correlated barrier hopping model. The existence of polarons as the major charge carriers in the present nanotube system was confirmed by the low values of polaron binding energy, found to decrease with fluence. The hopping distance increases with fluence indicating that the hopping probability increases with fluence.

  6. Angular and energy dependence of ion bombardment of Mo/Si multilayers

    DEFF Research Database (Denmark)

    Voorma, H.J.; Louis, E.; Bijkerk, F.

    1997-01-01

    The process of ion bombardment is investigated for the fabrication of Mo/Si multilayer x-ray mirrors using e-beam evaporation. The ion treatment is applied immediately after deposition of each of the Si layers to smoothen the layers by removing an additional thickness of the Si layer. In this stu......, the angular dependence of the etch yield, obtained from the in situ reflectivity measurements, is investigated in order o determine the optimal ion beam parameters for the production of multilayer mirrors on curved substrates....

  7. The effects of hot carrier and swift heavy ion irradiation on electrical characteristics of advanced 200 GHz SiGe HBTs

    Energy Technology Data Exchange (ETDEWEB)

    Vinayakprasanna, N. H.; Praveen, K. C.; Prakash, A. P. Gnana, E-mail: gnanaprakash@physics.uni-mysore.ac.in [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore-570006 (India); Cressler, J. D. [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta-30332, GA (United States)

    2016-05-23

    The 200 GHz SiGe HBTs were irradiated with 80 MeV Carbon ions up to a total dose of 100 Mrad to understand the degradation in electrical characteristics. The degradation in the electrical characteristics of SiGe HBTs was also studied by mixed mode electrical stress up to 10,000 s. The electrical characteristics were measured before and after every total dose and after fixed stress time. The normalized peak h{sub FE} of the stressed and irradiated SiGe HBTs are compared to estimate the equivalent stress time for a particular total dose. These correlations are drawn for the first time and the results will establish a systematic relation between stress time and total dose.

  8. The effects of hot carrier and swift heavy ion irradiation on electrical characteristics of advanced 200 GHz SiGe HBTs

    International Nuclear Information System (INIS)

    Vinayakprasanna, N. H.; Praveen, K. C.; Prakash, A. P. Gnana; Cressler, J. D.

    2016-01-01

    The 200 GHz SiGe HBTs were irradiated with 80 MeV Carbon ions up to a total dose of 100 Mrad to understand the degradation in electrical characteristics. The degradation in the electrical characteristics of SiGe HBTs was also studied by mixed mode electrical stress up to 10,000 s. The electrical characteristics were measured before and after every total dose and after fixed stress time. The normalized peak h_F_E of the stressed and irradiated SiGe HBTs are compared to estimate the equivalent stress time for a particular total dose. These correlations are drawn for the first time and the results will establish a systematic relation between stress time and total dose.

  9. Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay

    Energy Technology Data Exchange (ETDEWEB)

    Novakovic, M. [VINCA Institute of Nuclear Sciences, 11001 Belgrade (Serbia); II. Physikalisches Institut, Georg-August-Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany); Zhang, K. [II. Physikalisches Institut, Georg-August-Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany); Popovic, M.; Bibic, N. [VINCA Institute of Nuclear Sciences, 11001 Belgrade (Serbia); II. Physikalisches Institut, Georg-August-Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany); Hofsaess, H. [II. Physikalisches Institut, Georg-August-Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany); Lieb, K.P., E-mail: plieb@gwdg.d [II. Physikalisches Institut, Georg-August-Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany)

    2011-05-01

    Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and silicide phase formation depend sensitively on the ion and film parameters, including the structure of the metal/Si interface. Thin Co layers e-gun evaporated to a thickness of 50 nm on Si(1 0 0) wafers were bombarded at room temperature with 400-keV Xe{sup +} ions at fluences of up to 3 x 10{sup 16} cm{sup -2}. We used either crystalline or pre-amorphized Si wafers the latter ones prepared by 1.0-keV Ar-ion implantation. The as-deposited or Xe-ion-irradiated samples were then isochronally annealed at temperatures up to 700 {sup o}C. Changes of the bilayer structures induced by ion irradiation and/or annealing were investigated with RBS, XRD and HRTEM. The mixing rate for the Co/c-Si couples, {Delta}{sigma}{sup 2}/{Phi} = 3.0(4) nm{sup 4}, is higher than the value expected for ballistic mixing and about half the value typical for spike mixing. Mixing of pre-amorphized Si is much weaker relative to crystalline Si wafers, contrary to previous results obtained for Fe/Si bilayers. Annealing of irradiated samples produces very similar interdiffusion and phase formation patterns above 400 {sup o}C as in the non-irradiated Co/Si bilayers: the phase evolution follows the sequence Co{sub 2}Si {yields} CoSi {yields} CoSi{sub 2}.

  10. Damage accumulation in MgO irradiated with MeV Au ions at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Bachiller-Perea, Diana, E-mail: dianabachillerperea@gmail.com [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Univ. Paris-Sud, CNRS-IN2P3, Université Paris-Saclay, 91405, Orsay Cedex (France); Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, C/Faraday 3, 28049, Madrid (Spain); Dpto. de Física Aplicada, Universidad Autónoma de Madrid, Ciudad Universitaria de Cantoblanco, 28049, Madrid (Spain); Debelle, Aurélien, E-mail: aurelien.debelle@u-psud.fr [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Univ. Paris-Sud, CNRS-IN2P3, Université Paris-Saclay, 91405, Orsay Cedex (France); Thomé, Lionel [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Univ. Paris-Sud, CNRS-IN2P3, Université Paris-Saclay, 91405, Orsay Cedex (France); Behar, Moni [Instituto de Física, Universidade Federal do Rio Grande do Sul, C.P. 15051, 91501-970, Porto Alegre, RS (Brazil)

    2016-09-15

    The damage accumulation process in MgO single crystals under medium-energy heavy ion irradiation (1.2 MeV Au) at fluences up to 4 × 10{sup 14} cm{sup −2} has been studied at three different temperatures: 573, 773, and 1073 K. Disorder depth profiles have been determined through the use of the Rutherford backscattering spectrometry in channeling configuration (RBS/C). The analysis of the RBS/C data reveals two steps in the MgO damage process, irrespective of the temperature. However, we find that for increasing irradiation temperature, the damage level decreases and the fluence at which the second step takes place increases. A shift of the damage peak at increasing fluence is observed for the three temperatures, although the position of the peak depends on the temperature. These results can be explained by an enhanced defect mobility which facilitates defect migration and may favor defect annealing. X-ray diffraction reciprocal space maps confirm the results obtained with the RBS/C technique. - Highlights: • High-temperature MeV-ion irradiated MgO exhibits a two-step damage process. • The occurrence of the second step is delayed with increasing temperature. • The damage level decreases with increasing temperature. • A shift of the damage peak is observed with increasing fluence. • A high defect mobility at high temperatures in MgO is clearly evidenced.

  11. Secondary electron emission of thin carbon foils under the impact of hydrogen atoms, ions and molecular ions, under energies within the MeV range

    International Nuclear Information System (INIS)

    Vidovic, Z.

    1997-06-01

    This work focuses on the study of the emission statistics of secondary electrons from thin carbon foils bombarded with H 0 , H 2 + and H 3 + projectiles in the 0.25-2.2 MeV energy range. The phenomenon of secondary electron emission from solids under the impact of swift ions is mainly due to inelastic interactions with target electrons. The phenomenological and theoretical descriptions, as well as a summary of the main theoretical models are the subject of the first chapter. The experimental set-up used to measure event by event the electron emission of the two faces of a thin carbon foil traversed by an energetic projectile is described in the chapter two. In this chapter are also presented the method and algorithms used to process experimental spectra in order to obtain the statistical distribution of the emitted electrons. Chapter three presents the measurements of secondary electron emission induced by H atoms passing through thin carbon foils. The secondary electron yields are studied in correlation with the emergent projectile charge state. We show the peculiar role of the projectile electron, whether it remains or not bound to the incident proton. The fourth chapter is dedicated to the secondary electron emission induced by H 2 + and H 3 + polyatomic ions. The results are interpreted in terms of collective effects in the interactions of these ions with solids. The role of the proximity of the protons, molecular ion fragments, upon the amplitude of these collective effects is evidenced from the study of the statistics of forward emission. These experiences allowed us to shed light on various aspects of atom and polyatomic ion inter-actions with solid surfaces. (author)

  12. Inhibitive formation of nanocavities by introduction of Si atoms in Ge nanocrystals produced by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Cai, R. S.; Shang, L.; Liu, X. H.; Zhang, Y. J. [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Wang, Y. Q., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Ross, G. G.; Barba, D., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [INRS-Énergie, Matériaux et Télécommunications, 1650 boulevard Lionel-Boulet, Varennes Québec J3X 1S2 (Canada)

    2014-05-28

    Germanium nanocrystals (Ge-nc) were successfully synthesized by co-implantation of Si and Ge ions into a SiO{sub 2} film thermally grown on (100) Si substrate and fused silica (pure SiO{sub 2}), respectively, followed by subsequent annealing at 1150 °C for 1 h. Transmission electron microscopy (TEM) examinations show that nanocavities only exist in the fused silica sample but not in the SiO{sub 2} film on a Si substrate. From the analysis of the high-resolution TEM images and electron energy-loss spectroscopy spectra, it is revealed that the absence of nanocavities in the SiO{sub 2} film/Si substrate is attributed to the presence of Si atoms inside the formed Ge-nc. Because the energy of Si-Ge bonds (301 kJ·mol{sup −1}) are greater than that of Ge-Ge bonds (264 kJ·mol{sup −1}), the introduction of the Si-Ge bonds inside the Ge-nc can inhibit the diffusion of Ge from the Ge-nc during the annealing process. However, for the fused silica sample, no crystalline Si-Ge bonds are detected within the Ge-nc, where strong Ge outdiffusion effects produce a great number of nanocavities. Our results can shed light on the formation mechanism of nanocavities and provide a good way to avoid nanocavities during the process of ion implantation.

  13. Scalable Production of Si Nanoparticles Directly from Low Grade Sources for Lithium-Ion Battery Anode.

    Science.gov (United States)

    Zhu, Bin; Jin, Yan; Tan, Yingling; Zong, Linqi; Hu, Yue; Chen, Lei; Chen, Yanbin; Zhang, Qiao; Zhu, Jia

    2015-09-09

    Silicon, one of the most promising candidates as lithium-ion battery anode, has attracted much attention due to its high theoretical capacity, abundant existence, and mature infrastructure. Recently, Si nanostructures-based lithium-ion battery anode, with sophisticated structure designs and process development, has made significant progress. However, low cost and scalable processes to produce these Si nanostructures remained as a challenge, which limits the widespread applications. Herein, we demonstrate that Si nanoparticles with controlled size can be massively produced directly from low grade Si sources through a scalable high energy mechanical milling process. In addition, we systematically studied Si nanoparticles produced from two major low grade Si sources, metallurgical silicon (∼99 wt % Si, $1/kg) and ferrosilicon (∼83 wt % Si, $0.6/kg). It is found that nanoparticles produced from ferrosilicon sources contain FeSi2, which can serve as a buffer layer to alleviate the mechanical fractures of volume expansion, whereas nanoparticles from metallurgical Si sources have higher capacity and better kinetic properties because of higher purity and better electronic transport properties. Ferrosilicon nanoparticles and metallurgical Si nanoparticles demonstrate over 100 stable deep cycling after carbon coating with the reversible capacities of 1360 mAh g(-1) and 1205 mAh g(-1), respectively. Therefore, our approach provides a new strategy for cost-effective, energy-efficient, large scale synthesis of functional Si electrode materials.

  14. MeV single-ion beam irradiation of mammalian cells using the Surrey vertical nanobeam, compared with broad proton beam and X-ray irradiations

    Energy Technology Data Exchange (ETDEWEB)

    Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Jeynes, J.C.G.; Merchant, M.J.; Kirkby, K.; Kirkby, N. [Surrey Ion Beam Center, Faculty of Engineering and Physical Science, University of Surrey, Guildford Surrey, GU2 7XH (United Kingdom); Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2013-07-15

    Highlights: •Recently completed nanobeam at the Surrey Ion Beam Centre was used. •3.8-MeV single and broad proton beams irradiated Chinese hamster cells. •Cell survival curves were measured and compared with 300-kV X-ray irradiation. •Single ion irradiation had a lower survival part at ultra-low dose. •It implies hypersensitivity, bystander effect and cell cycle phase of cell death. -- Abstract: As a part of a systematic study on mechanisms involved in physical cancer therapies, this work investigated response of mammalian cells to ultra-low-dose ion beam irradiation. The ion beam irradiation was performed using the recently completed nanobeam facility at the Surrey Ion Beam Centre. A scanning focused vertical ion nano-beam was applied to irradiate Chinese hamster V79 cells. The V79 cells were irradiated in two different beam modes, namely, focused single ion beam and defocused scanning broad ion beam of 3.8-MeV protons. The single ion beam was capable of irradiating a single cell with a precisely controlled number of the ions to extremely low doses. After irradiation and cell incubation, the number of surviving colonies as a function of the number of the irradiating ions was measured for the cell survival fraction curve. A lower survival for the single ion beam irradiation than that of the broad beam case implied the hypersensitivity and bystander effect. The ion-beam-induced cell survival curves were compared with that from 300-kV X-ray irradiation. Theoretical studies indicated that the cell death in single ion irradiation mainly occurred in the cell cycle phases of cell division and intervals between the cell division and the DNA replication. The success in the experiment demonstrated the Surrey vertical nanobeam successfully completed.

  15. Angle-resolved imaging of single-crystal materials with MeV helium ions

    Energy Technology Data Exchange (ETDEWEB)

    Strathman, M D; Baumann, S [Charles Evans and Associates, Redwood City, CA (United States)

    1992-02-01

    The simplest form of angle-resolved mapping for single-crystal materials is the creation of a channeling angular scan. Several laboratories have expanded this simple procedure to include mapping as a function of two independent tilts. These angle-resolved images are particularly suited to the assessment of crystal parameters including disorder, lattice location of impurities, and lattice stress. This paper will describe the use of the Charles Evans and Associates RBS-400 scattering chamber for acquisition, display, and analysis of angle-resolved images obtained from backscattered helium ions. Typical data acquisition times are 20 min for a {+-}2deg X-Y tilt scan with 2500 pixels (8/100deg resolution), and 10 nC per pixel. In addition, we will present a method for automatically aligning crystals for channeling measurements based on this imaging technology. (orig.).

  16. Angle-resolved imaging of single-crystal materials with MeV helium ions

    International Nuclear Information System (INIS)

    Strathman, M.D.; Baumann, S.

    1992-01-01

    The simplest form of angle-resolved mapping for single-crystal materials is the creation of a channeling angular scan. Several laboratories have expanded this simple procedure to include mapping as a function of two independent tilts. These angle-resolved images are particularly suited to the assessment of crystal parameters including disorder, lattice location of impurities, and lattice stress. This paper will describe the use of the Charles Evans and Associates RBS-400 scattering chamber for acquisition, display, and analysis of angle-resolved images obtained from backscattered helium ions. Typical data acquisition times are 20 min for a ±2deg X-Y tilt scan with 2500 pixels (8/100deg resolution), and 10 nC per pixel. In addition, we will present a method for automatically aligning crystals for channeling measurements based on this imaging technology. (orig.)

  17. Operation of low-energy ion implanters for Si, N, C ion implantation into silicon and glassy carbon

    International Nuclear Information System (INIS)

    Carder, D.A.; Markwitz, A.

    2009-01-01

    This report details the operation of the low-energy ion implanters at GNS Science for C, N and Si implantations. Two implanters are presented, from a description of the components through to instructions for operation. Historically the implanters have been identified with the labels 'industrial' and 'experimental'. However, the machines only differ significantly in the species of ions available for implantation and sample temperature during implantation. Both machines have been custom designed for research purposes, with a wide range of ion species available for ion implantation and the ability to implant two ions into the same sample at the same time from two different ion sources. A fast sample transfer capability and homogenous scanning profiles are featured in both cases. Samples up to 13 mm 2 can be implanted, with the ability to implant at temperatures down to liquid nitrogen temperatures. The implanters have been used to implant 28 Si + , 14 N + and 12 C + into silicon and glassy carbon substrates. Rutherford backscattering spectroscopy has been used to analyse the implanted material. From the data a Si 30 C 61 N 9 layer was measured extending from the surface to a depth of about 77 ± 2 nm for (100) silicon implanted with 12 C + and 14 N + at multiple energies. Silicon and nitrogen ion implantation into glassy carbon produced a Si (40.5 %), C (38 %), N (19.5 %) and O (2%) layer centred around a depth of 50 ± 2 nm from the surface. (author). 8 refs., 20 figs

  18. Origin of Si(LMM) Auger Electron Emission from Silicon and Si-Alloys by keV Ar+ Ion Bombardment

    Science.gov (United States)

    Iwami, Motohiro; Kim, Su Chol; Kataoka, Yoshihide; Imura, Takeshi; Hiraki, Akio; Fujimoto, Fuminori

    1980-09-01

    Si(LMM) Auger electrons emitted from specimens of pure silicon and several Si-alloys (Ni-Si, Pd-Si and Cu-Si) under keV Ar+ ion bombardment, were examined. In the Auger spectra from all specimens studied there were four peaks at energies of 92, 86, 76 and 66 eV. The Auger signal intensity varied considerably with both the incident angle and the energy of the primary ion beam. It is proposed that the Auger electrons are emitted from silicon atoms (or ions) just beneath the specimen surface but free from the bulk network.

  19. Origin of Si(LMM) Auger electron emission from silicon and Si-alloys by keV Ar/sup +/ ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Iwami, M; Kim, S; Kataoka, Y; Imura, T; Hiraki, A [Osaka Univ., Suita (Japan). Faculty of Engineering

    1980-09-01

    Si(LMM) Auger electrons emitted from specimens of pure silicon and several Si-alloys (Ni-Si, Pd-Si and Cu-Si) under keV Ar/sup +/ ion bombardment, were examined. In the Auger spectra from all specimens studied there were four peaks at energies of 92, 86, 76 and 66 eV. The Auger signal intensity varied considerably with both the incident angle and the energy of the primary ion beam. It is proposed that the Auger electrons are emitted from silicon atoms (or ions) just beneath the specimen surface but free from the bulk network.

  20. Study of Si wafer surfaces irradiated by gas cluster ion beams

    International Nuclear Information System (INIS)

    Isogai, H.; Toyoda, E.; Senda, T.; Izunome, K.; Kashima, K.; Toyoda, N.; Yamada, I.

    2007-01-01

    The surface structures of Si (1 0 0) wafers subjected to gas cluster ion beam (GCIB) irradiation have been analyzed by cross-sectional transmission electron microscopy (XTEM) and atomic force microscopy (AFM). GCIB irradiation is a promising technique for both precise surface etching and planarization of Si wafers. However, it is very important to understand the crystalline structure of Si wafers after GCIB irradiation. An Ar-GCIB used for the physically sputtering of Si atoms and a SF 6 -GCIB used for the chemical etching of the Si surface are also analyzed. The GCIB irradiation increases the surface roughness of the wafers, and amorphous Si layers are formed on the wafer surface. However, when the Si wafers are annealed in hydrogen at a high temperature after the GCIB irradiation, the surface roughness decreases to the same level as that before the irradiation. Moreover, the amorphous Si layers disappear completely

  1. Hydrogen and oxygen behaviors on Porous-Si surfaces observed using a scanning ESD ion microscope

    International Nuclear Information System (INIS)

    Itoh, Yuki; Ueda, Kazuyuki

    2004-01-01

    A scanning electron-stimulated desorption (ESD) ion microscope (SESDIM) measured the 2-D images of hydrogen and oxygen distribution on solid surfaces. A primary electron beam at 600 eV, with a pulse width of 220 ns, resulted in ion yields of H + and O + . This SESDIM is applied to the surface analysis of Porous-Si (Po-Si) partially covered with SiN films. During the heating of a specimen of the Po-Si at 800 deg. C under ultra-high-vacuum (UHV) conditions, the components of the surface materials were moved or diffused by thermal decomposition accompanied by a redistribution of hydrogen and oxygen. After cyclic heating of above 800 deg. C, the dynamic behaviors of H + and O + accompanied by the movements of the SiN layers were observed as images of H + and O + . This was because the H + and O + ions have been identified as composite materials by their kinetic energies

  2. One dimensional Si/Sn - based nanowires and nanotubes for lithium-ion energy storage materials

    KAUST Repository

    Choi, Nam-Soon; Yao, Yan; Cui, Yi; Cho, Jaephil

    2011-01-01

    There has been tremendous interest in using nanomaterials for advanced Li-ion battery electrodes, particularly to increase the energy density by using high specific capacity materials. Recently, it was demonstrated that one dimensional (1D) Si

  3. The reduction of the change of secondary ions yield in the thin SiON/Si system

    International Nuclear Information System (INIS)

    Sameshima, J.; Yamamoto, H.; Hasegawa, T.; Nishina, T.; Nishitani, T.; Yoshikawa, K.; Karen, A.

    2006-01-01

    For the analyses of gate insulating materials of thin silicon oxy-nitride (SiON) and dielectric films, SIMS is one of the available tool along with TEM and ESCA, etc. Especially, to investigate the distribution of dopant in the thin films, SIMS is appreciably effective in these techniques because of its depth profiling capability and high sensitivity. One of the problem occurring in this SIMS measurement is the change of secondary ion yield at the interface as well as in the layers with different chemical composition. To solve this problem, some groups have researched the phenomenon for SiO 2 /Si interface [W. Vandervorst, T. Janssens, R. Loo, M. Caymax, I. Peytier, R. Lindsay, J. Fruhauf, A. Bergmaier, G. Dollinger, Appl. Surf. Sci. 203-204 (2003) 371-376; S. Hayashi, K.Yanagihara, Appl. Surf. Sci. 203-204 (2003) 339-342; M. Barozzi, D. Giubertoni, M.Anderle, M. Bersani, Appl. Surf. Sci. 231-232 (2004) 632-635; T.H. Buyuklimanli, J.W. Marino, S.W. Novak, Appl. Surf. Sci. 231-232 (2004) 636-639]. In the present study, profiles of boron and matrix elements in the Si/SiON layers on Si substrate have been investigated. The sensitivity change of Si and B profiles in SiON layer become smaller by using oxygen flood than those without oxygen flood for both O 2 + and Cs + beam. At the range of 0-25 at.% of N composition, 11 B dosimetry in SiON layer implanted through amorphous Si depends on N composition. This trend could be caused by the sensitivity change of 11 B, or it indicates real 11 B concentration change in SiON lyaer. N areal density determined by Cs + SIMS with oxygen flooding also shows linear relationship with N composition estimated by XPS

  4. Ion Beam Materials Analysis and Modifications at keV to MeV Energies at the University of North Texas

    Science.gov (United States)

    Rout, Bibhudutta; Dhoubhadel, Mangal S.; Poudel, Prakash R.; Kummari, Venkata C.; Lakshantha, Wickramaarachchige J.; Manuel, Jack E.; Bohara, Gyanendra; Szilasi, Szabolcs Z.; Glass, Gary A.; McDaniel, Floyd D.

    2014-02-01

    The University of North Texas (UNT) Ion Beam Modification and Analysis Laboratory (IBMAL) has four particle accelerators including a National Electrostatics Corporation (NEC) 9SDH-2 3 MV tandem Pelletron, a NEC 9SH 3 MV single-ended Pelletron, and a 200 kV Cockcroft-Walton. A fourth HVEC AK 2.5 MV Van de Graaff accelerator is presently being refurbished as an educational training facility. These accelerators can produce and accelerate almost any ion in the periodic table at energies from a few keV to tens of MeV. They are used to modify materials by ion implantation and to analyze materials by numerous atomic and nuclear physics techniques. The NEC 9SH accelerator was recently installed in the IBMAL and subsequently upgraded with the addition of a capacitive-liner and terminal potential stabilization system to reduce ion energy spread and therefore improve spatial resolution of the probing ion beam to hundreds of nanometers. Research involves materials modification and synthesis by ion implantation for photonic, electronic, and magnetic applications, micro-fabrication by high energy (MeV) ion beam lithography, microanalysis of biomedical and semiconductor materials, development of highenergy ion nanoprobe focusing systems, and educational and outreach activities. An overview of the IBMAL facilities and some of the current research projects are discussed.

  5. Low frequency alternating current conduction and dielectric relaxation in polypyrrole irradiated with 100 MeV swift heavy ions of silver (Ag{sup 8+})

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Amarjeet, E-mail: amarkaur@physics.du.ac.in [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Dhillon, Anju [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Avasthi, D.K. [Inter University Accelerator Center (IUAC), Aruna Asaf Ali Road, New Delhi 110067 (India)

    2013-07-15

    Polypyrrole (PPY) films were prepared by electrochemical polymerization technique. The fully undoped samples were irradiated with different radiation fluences ranging from 10{sup 10} to 10{sup 12} ions cm{sup −2} of 100 MeV silver (Ag{sup 8+}) ions. The temperature dependence of ac conductivity [σ{sub m}(ω)], dielectric constant (ε′) and dielectric loss (ε′′) of both irradiated as well as unirradiated samples have been investigated in 77–300 K. There exists typical Debye type dispersion. Giant increase in dielectric constant has been observed for irradiated samples which is attributed to polaronic defects produced during irradiation. - Graphical abstract: Display Omitted - Highlights: • Polypyrrole samples were prepared by electrochemical technique. • The fully undoped samples were irradiated with 100 MeV silver (Ag{sup 8+}) ions. • Giant increase in dielectric constant in irradiated samples is observed. • Dielectric behaviour is attributed to polaronic defects produced during irradiation.

  6. Low frequency alternating current conduction and dielectric relaxation in polypyrrole irradiated with 100 MeV swift heavy ions of silver (Ag8+)

    International Nuclear Information System (INIS)

    Kaur, Amarjeet; Dhillon, Anju; Avasthi, D.K.

    2013-01-01

    Polypyrrole (PPY) films were prepared by electrochemical polymerization technique. The fully undoped samples were irradiated with different radiation fluences ranging from 10 10 to 10 12 ions cm −2 of 100 MeV silver (Ag 8+ ) ions. The temperature dependence of ac conductivity [σ m (ω)], dielectric constant (ε′) and dielectric loss (ε′′) of both irradiated as well as unirradiated samples have been investigated in 77–300 K. There exists typical Debye type dispersion. Giant increase in dielectric constant has been observed for irradiated samples which is attributed to polaronic defects produced during irradiation. - Graphical abstract: Display Omitted - Highlights: • Polypyrrole samples were prepared by electrochemical technique. • The fully undoped samples were irradiated with 100 MeV silver (Ag 8+ ) ions. • Giant increase in dielectric constant in irradiated samples is observed. • Dielectric behaviour is attributed to polaronic defects produced during irradiation

  7. Nanostructured Si/TiC composite anode for Li-ion batteries

    International Nuclear Information System (INIS)

    Zeng, Z.Y.; Tu, J.P.; Yang, Y.Z.; Xiang, J.Y.; Huang, X.H.; Mao, F.; Ma, M.

    2008-01-01

    Si/TiC nanocomposite anode was synthesized by a surface sol-gel method in combination with a following heat-treatment process. Through this process, nanosized Si was homogeneously distributed in a titanium carbide matrix. The electrochemically less active TiC working as a buffer matrix successfully prevented Si from cracking/crumbling during the charging/discharging process. The interspaces in the Si/TiC nanocomposite could offer convenient channels for Li ions to react with active Si. The Si/TiC composite exhibited a reversible charge/discharge capacity of about 1000 mAh g -1 with average discharge capacity fading of 1.8 mAh g -1 (0.18%) from 2nd to 100th cycle, indicating its excellent cyclability when used as anode materials for lithium-ion batteries

  8. Ion beam mixing to produce disordered AlSi superconducting alloys

    International Nuclear Information System (INIS)

    Xi Xiaoxing; Ran Qize; Liu Jiarui; Guan Weiyan

    1987-01-01

    Multilayered Al/Si films were bombarded with Ar ions at LHe temperature and superconducting transition temperature Tsub(c) was measured in situ. The highest Tsub(c) thus obtained was 7.53 K. The systematic studies on samples with different compositions suggest that ion induced disorder might be the main reason for Tsub(c) enhancement in these AlSi alloys. (author)

  9. Thermally induced formation of SiC nanoparticles from Si/C/Si multilayers deposited by ultra-high-vacuum ion beam sputtering

    International Nuclear Information System (INIS)

    Chung, C-K; Wu, B-H

    2006-01-01

    A novel approach for the formation of SiC nanoparticles (np-SiC) is reported. Deposition of Si/C/Si multilayers on Si(100) wafers by ultra-high-vacuum ion beam sputtering was followed by thermal annealing in vacuum for conversion into SiC nanoparticles. The annealing temperature significantly affected the size, density, and distribution of np-SiC. No nanoparticles were formed for multilayers annealed at 500 0 C, while a few particles started to appear when the annealing temperature was increased to 700 0 C. At an annealing temperature of 900 0 C, many small SiC nanoparticles, of several tens of nanometres, surrounding larger submicron ones appeared with a particle density approximately 16 times higher than that observed at 700 0 C. The higher the annealing temperature was, the larger the nanoparticle size, and the higher the density. The higher superheating at 900 0 C increased the amount of stable nuclei, and resulted in a higher particle density compared to that at 700 0 C. These particles grew larger at 900 0 C to reduce the total surface energy of smaller particles due to the higher atomic mobility and growth rate. The increased free energy of stacking defects during particle growth will limit the size of large particles, leaving many smaller particles surrounding the large ones. A mechanism for the np-SiC formation is proposed in this paper

  10. Ion beam synthesis of semiconductor nanoparticles for Si based optoelectronic devices

    International Nuclear Information System (INIS)

    Gonzalez-Varona, O.; Perez-Rodriguez, A.; Garrido, B.; Bonafos, C.; Lopez, M.; Morante, J.R.; Montserrat, J.; Rodriguez, R.

    2000-01-01

    Intense white (to the eye) luminescence has been obtained by multiple implantation of Si + and C + ions into thermal SiO 2 and a post-implantation annealing process. This white emission is a consequence of the convolution of three luminescence peaks centred at about 1.45 eV (infrared with a long tail in the red), 2.1 eV (yellow) and 2.8 eV (blue). These emissions have been correlated to the synthesis of nanocrystals of Si and SiC, and the existence of C-rich precipitates. Cross section TEM shows a buried layer with dark contrast, which correlates with the maximum of the C implanted profile, and likely with a high density of C-rich amorphous domains. Besides, two kinds of nanocrystalline precipitates are found, which have been identified as Si and hexagonal 6H-SiC by electron diffraction experiments. To our knowledge, these data provide the first experimental evidence on the ion beam synthesis of nanocrystalline 6H-SiC embedded in SiO 2 . Correlation with previous data gives support to the assignment of the infrared, yellow and blue peaks with the Si, C-rich and SiC precipitate phases and/or its interfaces with SiO 2

  11. Ion beam synthesis of semiconductor nanoparticles for Si based optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Varona, O.; Perez-Rodriguez, A.; Garrido, B.; Bonafos, C.; Lopez, M.; Morante, J.R.; Montserrat, J.; Rodriguez, R

    2000-03-01

    Intense white (to the eye) luminescence has been obtained by multiple implantation of Si{sup +} and C{sup +} ions into thermal SiO{sub 2} and a post-implantation annealing process. This white emission is a consequence of the convolution of three luminescence peaks centred at about 1.45 eV (infrared with a long tail in the red), 2.1 eV (yellow) and 2.8 eV (blue). These emissions have been correlated to the synthesis of nanocrystals of Si and SiC, and the existence of C-rich precipitates. Cross section TEM shows a buried layer with dark contrast, which correlates with the maximum of the C implanted profile, and likely with a high density of C-rich amorphous domains. Besides, two kinds of nanocrystalline precipitates are found, which have been identified as Si and hexagonal 6H-SiC by electron diffraction experiments. To our knowledge, these data provide the first experimental evidence on the ion beam synthesis of nanocrystalline 6H-SiC embedded in SiO{sub 2}. Correlation with previous data gives support to the assignment of the infrared, yellow and blue peaks with the Si, C-rich and SiC precipitate phases and/or its interfaces with SiO{sub 2}.

  12. Elastic atomic displacements and color center creation in LiF crystals irradiated with 3-, 9- and 12-MeV Au ions

    International Nuclear Information System (INIS)

    Sorokin, M.V.; Papaleo, R.M.; Schwartz, K.

    2009-01-01

    Creation of color centers in LiF under irradiation with 3-12-MeV Au ions was studied. Comparison of experimental data of color center creation with computer simulation of the energy deposition and elastic atomic displacements reveals the role of elastic collisions in defect creation by these ions, which have comparable magnitudes of electronic and elastic stopping. The experimentally measured efficiency of color center creation and that predicted by the simulation of elastic displacements have a similar dependence on the projectile energy. Thus, the color center creation is mainly associated with the elastic collisions, despite the relatively large values of the electronic stopping power for these ions. (orig.)

  13. A Monte Carlo computer code for evaluating energy loss of 10 keV to 10 MeV ions in amorphous silicon materials

    International Nuclear Information System (INIS)

    Erramli, H.; Elbounagui, O.; Misdaq, M.A.; Merzouki, A.

    2007-01-01

    The basic concepts of a computer simulation code for determining the energy loss of ions in the 10 keV to 10 MeV energy range in amorphous silicon materials were presented and discussed. Data obtained were found in good agreement with those obtained by using a SRIM programme. Electronic and nuclear energy losses were evaluated. Variation of the energy loss as a function of the incident ion energy were studied. This new computer code is a good tool for evaluating stopping powers of various materials for light and heavy ions

  14. Microstructural changes in silicon induced by patterning with focused ion beams of Ga, Si and Au

    International Nuclear Information System (INIS)

    Chee, See Wee; Kammler, Martin; Balasubramanian, Prabhu; Reuter, Mark C.; Hull, Robert; Ross, Frances M.

    2013-01-01

    We use focused beams of Ga + , Au + and Si ++ ions to induce local microstructural changes in single crystal silicon. The ions were delivered as single spot pulses into thin Si membranes that could subsequently be imaged and annealed in situ in a transmission electron microscope. For each ion, the focused ion beam implantation created an array of amorphous regions in the crystalline membrane. Annealing causes solid phase epitaxial regrowth to take place, but we show that the resulting microstructure depends on the ion species. For Ga + and Au + , precipitates remain after recrystallization, while for Si ++ , dislocation loops form around the periphery of each implanted spot. We attribute these loops to defects formed during solid phase epitaxial regrowth, with controlled placement of the loops possible. - Highlights: ► Ga + , Au + and Si ++ were implanted into thin membranes of Si. ► Samples were imaged and annealed in situ in a transmission electron microscope. ► Focused ion beam implantation created an array of amorphous spots. ► After recrystallization, precipitates form for Ga + and Au + , dislocation loops for Si ++ . ► Controlled placement of the dislocation loops possible

  15. Nitrogen ion induced nitridation of Si(111) surface: Energy and fluence dependence

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Praveen [Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India); ISOM, Universidad Politecnia de Madrid, 28040 (Spain); Kumar, Mahesh [Physics and Energy Harvesting Group, National Physical Laboratory, New Delhi 110012 (India); Nötzel, R. [ISOM, Universidad Politecnia de Madrid, 28040 (Spain); Shivaprasad, S.M., E-mail: smsprasad@jncasr.ac.in [Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India)

    2014-06-01

    We present the surface modification of Si(111) into silicon nitride by exposure to energetic N{sub 2}{sup +} ions. In-situ UHV experiments have been performed to optimize the energy and fluence of the N{sub 2}{sup +} ions to form silicon nitride at room temperature (RT) and characterized in-situ by X-ray photoelectron spectroscopy. We have used N{sub 2}{sup +} ion beams in the energy range of 0.2–5.0 keV of different fluence to induce surface reactions, which lead to the formation of Si{sub x}N{sub y} on the Si(111) surface. The XPS core level spectra of Si(2p) and N(1s) have been deconvoluted into different oxidation states to extract qualitative information, while survey scans have been used for quantifying of the silicon nitride formation, valence band spectra show that as the N{sub 2}{sup +} ion fluence increases, there is an increase in the band gap. The secondary electron emission spectra region of photoemission is used to evaluate the change in the work function during the nitridation process. The results show that surface nitridation initially increases rapidly with ion fluence and then saturates. - Highlights: • A systematic study for the formation of silicon nitride on Si(111). • Investigation of optimal energy and fluence for energetic N{sub 2}{sup +} ions. • Silicon nitride formation at room temperature on Si(111)

  16. A Au82Si18 liquid metal field-ion emitter for the production of Si ions: fundamental properties and mechanisms

    International Nuclear Information System (INIS)

    Bischoff, L.; Mair, G.L.R.; Aidinis, C.J.; Londos, C.A.; Akhmadaliev, C.; Ganetsos, Th.

    2004-01-01

    Focused silicon beams are useful for direct write applications, e.g., lithography on silicon without the undesirable effect of substrate contamination. However, since pure silicon is not amenable to liquid metal ion source (LMIS) manufacture, a suitable alloy containing silicon has to be produced. This paper covers almost all fundamental aspects of a Au 82 Si 18 eutectic, including the most detailed beam mass spectra reported to date of a AuSi source. A finding worthy of note in this investigation, manifested in the behaviour of the ion extraction voltage with temperature, is the abnormal behaviour of the surface tension coefficient of the alloy with temperature. An important deduction from this work, however, concerns the mechanisms responsible for the creation of doubly charged ions: reasons of self-consistency indicate that while Si 2+ is directly field evaporated, Au 2+ must form by the post-ionization of Au + . Finally, two different mechanisms seem to co-exist, as far as the production of cluster ions is concerned. While for cluster ions containing only a few atoms some sort of surface field-ionization mechanism might be responsible for their creation, for larger clusters, a droplet break-up mechanism, possibly by ion capture, seems very likely

  17. Enhancement of optical absorption of Si (100) surfaces by low energy N+ ion beam irradiation

    Science.gov (United States)

    Bhowmik, Dipak; Karmakar, Prasanta

    2018-05-01

    The increase of optical absorption efficiency of Si (100) surface by 7 keV and 8 keV N+ ions bombardment has been reported here. A periodic ripple pattern on surface has been observed as well as silicon nitride is formed at the ion impact zones by these low energy N+ ion bombardment [P. Karmakar et al., J. Appl. Phys. 120, 025301 (2016)]. The light absorption efficiency increases due to the presence of silicon nitride compound as well as surface nanopatterns. The Atomic Force Microscopy (AFM) study shows the formation of periodic ripple pattern and increase of surface roughness with N+ ion energy. The enhancement of optical absorption by the ion bombarded Si, compared to the bare Si have been measured by UV - visible spectrophotometer.

  18. Investigations on the structural and optical properties of the swift heavy ion irradiated 6H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Viswanathan, E. [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600025 (India); Katharria, Y.S. [Laboratoire de Physique des Interactions Ioniques et Moleculaires, Equipe Plasma-Surface, case 241, 13397 Marseille Cedex 20 (France); Selvakumar, S. [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600025 (India); Arulchakkaravarthi, A. [Sinmat Inc., 2153 SE Hawthorne Rd., Gainesville Fl-32641 (United States); Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, P.O. Box 10502, New Delhi 110067 (India); Sivaji, K., E-mail: sivaji.krishnan@yahoo.co [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600025 (India)

    2011-05-15

    Research highlights: {yields} We have reported the structural and optical properties of SHI irradiated 6H-SiC. {yields} The change in Raman modes evidences the disorder accumulation with respect to ion fluence. {yields} The disorder also causes the modification in the optical properties. {yields} The time resolved photoluminescence reflects multiple lifetimes due to the degenerate defects states. {yields} The study also reveals the presence of partial amorphous region due to SHI irradiation. -- Abstract: Single crystal 6H-SiC wafers have been irradiated with 150 MeV Ag{sup 12+} ions with fluences ranging from 1 x 10{sup 11} to 1 x 10{sup 13} ions/cm{sup 2} at 300 K. The defect accumulation as a function of fluence was studied to determine changes in structural and optical properties. The variation in the fundamental Raman modes of the crystalline 6H-SiC due to irradiation has been correlated with the disorder accumulation. The creation of defect states due to irradiation in the bandgap affects the blue-green photoluminescence emission in the irradiated samples. The UV-Visible absorption studies support the existence of defect states in the bandgap which is observed by the shift in the absorption edge towards the lower energy side with increasing fluence. Time Correlated Single Photon Counting photoluminescence decay results suggest that the existing defect states are radiative, exhibiting three lifetimes when irradiated with a fluence 5 x 10{sup 11} ions/cm{sup 2}. The total number of lifetime components was reduced for a fluence 1 x 10{sup 13} ions/cm{sup 2} as the defect states produced increase the non-radiative defect centres. These results suggest that the accumulation of defects due to irradiation at fluences 5 x 10{sup 11} and 1 x 10{sup 13} ions/cm{sup 2} are degenerate configurations which exhibit multiple lifetimes in photoluminescence studies. It is inferred that the optically active defect states influence the transition rate of charge carriers in this

  19. Measurement of proton induced thick target γ-ray yields on B, N, Na, Al and Si from 2.5 to 4.1 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Chiari, M., E-mail: chiari@fi.infn.it [INFN-Florence and Department of Physics and Astronomy, University of Florence, via G. Sansone 1, 50019 Sesto Fiorentino (Italy); Ferraccioli, G.; Melon, B.; Nannini, A.; Perego, A.; Salvestrini, L. [INFN-Florence and Department of Physics and Astronomy, University of Florence, via G. Sansone 1, 50019 Sesto Fiorentino (Italy); Lagoyannis, A.; Preketes-Sigalas, K. [Tandem Accelerator Laboratory, Institute of Nuclear and Particle Physics, NCSR “Demokritos”, 153.10 Aghia Paraskevi, Athens (Greece)

    2016-01-01

    Thick target yields for proton induced γ-ray emission (PIGE) on low-Z nuclei, namely B, N, Na, Al and Si, were measured for proton energies from 2.5 to 4.1 MeV and emission angles of 0°, 45° and 90°, at the 3 MV Tandetron laboratory of INFN-LABEC in Florence. The studied reactions were: {sup 10}B(p,α′γ){sup 7}Be (E{sub γ} = 429 keV), {sup 10}B(p,p′γ){sup 10}B (E{sub γ} = 718 keV) and {sup 11}B(p,p′γ){sup 11}B (E{sub γ} = 2125 keV) for boron; {sup 14}N(p,p′γ){sup 14}N (E{sub γ} = 2313 keV) for nitrogen; {sup 23}Na(p,p′γ){sup 23}Na (E{sub γ} = 441 and 1636 keV) and {sup 23}Na(p,α′γ){sup 20}Ne (E{sub γ} = 1634 keV) for sodium; {sup 27}Al(p,p′γ){sup 27}Al (E{sub γ} = 844 and 1014 keV) and {sup 27}Al(p,α′γ){sup 24}Mg (E{sub γ} = 1369 keV) for aluminum; {sup 28}Si(p,p′γ){sup 28}Si (E{sub γ} = 1779 keV) and {sup 29}Si(p,p′γ){sup 29}Si (E{sub γ} = 1273 keV) for silicon. The PIGE thick target yields have been measured with an overall uncertainty typically better than 10%. The use of the measured thick target yield to benchmark and validate experimental cross sections available in the literature is demonstrated.

  20. Disordering and amorphization of Zr3Al by 3.8 MeV Zr3+ ion bombardment

    International Nuclear Information System (INIS)

    Chen, F.C.; Ardell, A.J.

    1991-01-01

    The ordered intermetallic compound Zr 3 Al was irradiated with 3. 8 MeV Zr 3+ ions at various fluences up to 5 x 10 12 tons/mm 2 at a temperature of 250 degrees C and the irradiation- induced microstructures were investigated by transmission electron microscopy. Disordering began at the lowest dose, 0.0033 dpa, and complete loss of chemical long-range order occurred at a dose of 0.33 dpa. The onset of amorphization was also observed at this dose. Electron diffraction patterns from irradiated samples showed satellite reflections along in thin foils in [100] orientation and streaking along in foils oriented [011]. These diffraction effects are attributed to the presence of irradiation-induced microstructural defects that, when imaged in dark field, resemble rows of dislocation loops. A model of these arrays of loops, which are suggested to have Burgers vectors of the Frank type, is proposed. The model accounts for the contrast effects observed in the images and the streaking and satellites seen in the diffraction patterns. At the highest dose, 1.6 dpa, a new phase, Zr 5 Al 3 , appeared unexpectedly, most likely as a consequence of irradiation-induced solute segregation

  1. Ion-beam-induced ferromagnetism in Mn-doped PrFeO{sub 3} thin films grown on Si (100)

    Energy Technology Data Exchange (ETDEWEB)

    Sultan, Khalid; Ikram, M.; Mir, Sajad Ahmad; Habib, Zubida; Aarif ul Islam, Shah [National Institute of Technology, Solid State Physics Lab. Department of Physics, Srinagar, J and K (India); Ali, Yasir [Saint Longwal Institute of Engineering and Technology, Sangrur, Punjab (India); Asokan, K. [Inter University Accelerator Centre, Materials Science Division, New Delhi (India)

    2016-01-15

    The present study shows that the ion beam irradiation induces room-temperature ferromagnetic ordering in pulsed laser-deposited Mn-doped PrFeO{sub 3} thin films on Si (100) apart from change in the morphological, structural and electrical properties. Dense electronic excitation produced by high-energy 120 MeV Ag{sup 9+} ion irradiation causes change in surface roughness, crystallinity and strain. It is also evident that these excitations induce the magnetic ordering in this system. The observed modifications are due to the large electronic energy deposited by swift heavy ions irradiation. The appearance of ferromagnetism at 300 K in these samples after irradiation may be attributed to the canting of the antiferromagnetically ordered spins due to the structural distortion. (orig.)

  2. Nano-SiC region formation in (100) Si-on-insulator substrate: Optimization of hot-C+-ion implantation process to improve photoluminescence intensity

    Science.gov (United States)

    Mizuno, Tomohisa; Omata, Yuhsuke; Kanazawa, Rikito; Iguchi, Yusuke; Nakada, Shinji; Aoki, Takashi; Sasaki, Tomokazu

    2018-04-01

    We experimentally studied the optimization of the hot-C+-ion implantation process for forming nano-SiC (silicon carbide) regions in a (100) Si-on-insulator substrate at various hot-C+-ion implantation temperatures and C+ ion doses to improve photoluminescence (PL) intensity for future Si-based photonic devices. We successfully optimized the process by hot-C+-ion implantation at a temperature of about 700 °C and a C+ ion dose of approximately 4 × 1016 cm-2 to realize a high intensity of PL emitted from an approximately 1.5-nm-thick C atom segregation layer near the surface-oxide/Si interface. Moreover, atom probe tomography showed that implanted C atoms cluster in the Si layer and near the oxide/Si interface; thus, the C content locally condenses even in the C atom segregation layer, which leads to SiC formation. Corrector-spherical aberration transmission electron microscopy also showed that both 4H-SiC and 3C-SiC nanoareas near both the surface-oxide/Si and buried-oxide/Si interfaces partially grow into the oxide layer, and the observed PL photons are mainly emitted from the surface SiC nano areas.

  3. Model for efficient visible emission from Si nanocrystals ion beam synthesized in SiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Lopez, M. E-mail: mlopez@el.ub.es; Garrido, B.; Bonafos, C.; Perez-Rodriguez, A.; Morante, J.R.; Claverie, A

    2001-05-01

    The photoluminescence (PL) emission of Si nanocrystals ion beam synthesized in SiO{sub 2} is studied in this work as a function of annealing time and initial Si atomic excess (super-saturation). The optical properties of this system have been correlated with the characteristics of the nanocrystal population. The Si nanocrystals show a wide and very intense PL red/infrared emission. This emission peaks at about 1.7 eV for the low super-saturation range between 1% and 10% and shifts to the infrared for higher super-saturation (20% and 30%). Remarkably, there is a linear increase of PL intensity versus super-saturation in the low range. Moreover, the annealing kinetic studies show a typical behavior of PL intensity with annealing time, with a fast transitory increase that bends over to reach asymptotic saturation. The PL intensity saturation is satisfactorily explained by the Ostwald ripening stage of the nanocrystal population while the transient stage is a consequence of both nanocrystal growth and nanocrystal surface passivation mechanisms acting together. Indeed, electron spin resonance measurements demonstrate that the concentration of P{sub b} centers (Si dangling bonds) at the Si-SiO{sub 2} interface correlates inversely with PL intensity during most of the transient stage.

  4. Use of radial self-field geometry for intense pulsed ion beam generation above 6 MeV on Hermes III.

    Energy Technology Data Exchange (ETDEWEB)

    Renk, Timothy Jerome [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Harper-Slaboszewicz, Victor Jozef [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Ginn, William Craig [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Mikkelson, Kenneth A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Schall, Michael [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Cooper, Gary Wayne [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2012-12-01

    We investigate the generation and propagation of intense pulsed ion beams at the 6 MeV level and above using the Hermes III facility at Sandia National Laboratories. While high-power ion beams have previously been produced using Hermes III, we have conducted systematic studies of several ion diode geometries for the purpose of maximizing focused ion energy for a number of applications. A self-field axial-gap diode of the pinch reflex type and operated in positive polarity yielded beam power below predicted levels. This is ascribed both to power flow losses of unknown origin upstream of the diode load in Hermes positive polarity operation, and to anomalies in beam focusing in this configuration. A change to a radial self-field geometry and negative polarity operation resulted in greatly increased beam voltage (> 6 MeV) and estimated ion current. A comprehensive diagnostic set was developed to characterize beam performance, including both time-dependent and time-integrated measurements of local and total beam power. A substantial high-energy ion population was identified propagating in reverse direction, i.e. from the back side of the anode in the electron beam dump. While significant progress was made in increasing beam power, further improvements in assessing the beam focusing envelope will be required before ultimate ion generation efficiency with this geometry can be completely determined.

  5. Detection of 14 MeV neutrons in high temperature environment up to 500 deg. C using 4H-SiC based diode detector

    Energy Technology Data Exchange (ETDEWEB)

    Szalkai, D.; Klix, A. [KIT- Karlsruhe Institute of Technology, Institute of Neutron Physics and Reactor Technology Karlsruhe 76344 (Germany); Ferone, R.; Issa, F.; Ottaviani, L.; Vervisch, V. [IM2NP, UMR CNRS 7334, Aix-Marseille University, Case 231 -13397 Marseille Cedex 20 (France); Gehre, D. [Inst. for Nucl.- and Particle-Phys., Dresden University of Technology, Dresden 01069 (Germany); Lyoussi, A. [CEA, DEN, Departement d' Etudes des Reacteurs, Service de Physique Experimentale, Laboratoire Dosimetrie Capteurs Instrumentation, 13108 Saint-Paul-lez-Durance (France)

    2015-07-01

    In reactor technology and industrial applications detection of fast and thermal neutrons plays a crucial role in getting relevant information about the reactor environment and neutron yield. The inevitable elevated temperatures make neutron yield measurements problematic. Out of the currently available semiconductors 4H-SiC seems to be the most suitable neutron detector material under extreme conditions due to its high heat and radiation resistance, large band-gap and lower cost of production than in case of competing diamond detectors. In the framework of the European I-Smart project, optimal {sup 4}H-SiC diode geometries were developed for high temperature neutron detection and have been tested with 14 MeV fast neutrons supplied by a deuterium-tritium neutron generator with an average neutron flux of 10{sup 10}-10{sup 11} n/(s*cm{sup 2}) at Neutron Laboratory of the Technical University of Dresden in Germany from room temperatures up to several hundred degrees Celsius. Based on the results of the diode measurements, detector geometries appear to play a crucial role for high temperature measurements up to 500 deg. C. Experimental set-ups using SiC detectors were constructed to simulate operation in the harsh environmental conditions found in the tritium breeding blanket of the ITER fusion reactor, which is planned to be the location of neutron flux characterization measurements in the near future. (authors)

  6. Ionic conduction in 70-MeV C5+-ion-irradiated poly(vinylidenefluoride- co-hexafluoropropylene)-based gel polymer electrolytes

    International Nuclear Information System (INIS)

    Saikia, D.; Kumar, A.; Singh, F.; Avasthi, D.K.; Mishra, N.C.

    2005-01-01

    In an attempt to increase the Li + -ion diffusivity, poly(vinylidenefluoride-co-hexafluoropropylene)-(propylene carbonate+diethyl carbonate)-lithium perchlorate gel polymer electrolyte system has been irradiated with 70-MeV C 5+ -ion beam of nine different fluences. Swift heavy-ion irradiation shows enhancement in ionic conductivity at lower fluences and decrease in ionic conductivity at higher fluences with respect to unirradiated gel polymer electrolyte films. Maximum room-temperature (303 K) ionic conductivity is found to be 2x10 -2 S/cm after irradiation with a fluence of 10 11 ions/cm 2 . This interesting result could be attributed to the fact that for a particular ion beam with a given energy, a higher fluence provides critical activation energy for cross linking and crystallization to occur, which results in the decrease in ionic conductivity. X-ray-diffraction results show decrease in the degree of crystallinity upon ion irradiation at low fluences (≤10 11 ions/cm 2 ) and increase in crystallinity at higher fluences (>10 11 ions/cm 2 ). Analysis of Fourier-transform infrared spectroscopy results suggests the bond breaking at a fluence of 5x10 9 ions/cm 2 and cross linking at a fluence of 10 12 ions/cm 2 and corroborate conductivity and x-ray-diffraction results. Scanning electron micrographs exhibit increased porosity of the polymer electrolyte after ion irradiation

  7. Graphene-bonded and -encapsulated si nanoparticles for lithium ion battery anodes.

    Science.gov (United States)

    Wen, Yang; Zhu, Yujie; Langrock, Alex; Manivannan, Ayyakkannu; Ehrman, Sheryl H; Wang, Chunsheng

    2013-08-26

    Silicon (Si) has been considered a very promising anode material for lithium ion batteries due to its high theoretical capacity. However, high-capacity Si nanoparticles usually suffer from low electronic conductivity, large volume change, and severe aggregation problems during lithiation and delithiation. In this paper, a unique nanostructured anode with Si nanoparticles bonded and wrapped by graphene is synthesized by a one-step aerosol spraying of surface-modified Si nanoparticles and graphene oxide suspension. The functional groups on the surface of Si nanoparticles (50-100 nm) not only react with graphene oxide and bind Si nanoparticles to the graphene oxide shell, but also prevent Si nanoparticles from aggregation, thus contributing to a uniform Si suspension. A homogeneous graphene-encapsulated Si nanoparticle morphology forms during the aerosol spraying process. The open-ended graphene shell with defects allows fast electrochemical lithiation/delithiation, and the void space inside the graphene shell accompanied by its strong mechanical strength can effectively accommodate the volume expansion of Si upon lithiation. The graphene shell provides good electronic conductivity for Si nanoparticles and prevents them from aggregating during charge/discharge cycles. The functionalized Si encapsulated by graphene sample exhibits a capacity of 2250 mAh g⁻¹ (based on the total mass of graphene and Si) at 0.1C and 1000 mAh g⁻¹ at 10C, and retains 85% of its initial capacity even after 120 charge/discharge cycles. The exceptional performance of graphene-encapsulated Si anodes combined with the scalable and one-step aerosol synthesis technique makes this material very promising for lithium ion batteries. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Contribution estimate of the 2+(1.78 MeV) level excitation in silicon nucleus to the cross section of the 28Si(π, 3π)28Si * reaction

    International Nuclear Information System (INIS)

    Ermekov, N.T.; Korotkikh, V.L.; Starkov, N.I.

    1981-01-01

    For the purpose of studying the channel contribution with low-lying level excitation in silicon nucleus into the differential cross section of the reaction the π - + 28 Si→π - +π - +π + + 28 Si reaction is investigated at the bombarding 16 GeV/c pion momentum. The calculation of differential cross sections on the basis of the Glauber model with a factorizing nucleus density is performed. The found parameters of nuclear densities are tabulated. The investigated reaction differential cross sections are calculated with account of coherent production as well as the channel with 2 + (1.78 MeV) level excitation. The calculated differential cross sections values integrated by the effective mass of the produced three-pion system (0.9 GeV + , 1.78 MeV)=0.25 mb are obtained. It is shown that filling the diffraction minimum in three-pion production differential cross section for ''alive'' silicon target is due to contribution from events with the excitation of the low-lying level 2 + (1.78 MeV) [ru

  9. Dissociative scattering of low-energy SiF{sub 3}{sup +} and SiF{sup +} ions (5-200 eV) on Cu(100) surface

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, Hiroyuki; Baba, Yuji; Sasaki, T A [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    1997-03-01

    Dissociative scattering of molecular SiF{sub 3}{sup +} and SiF{sup +} ions from a Cu(100) single crystal surface has been investigated in the incident energy range from 5 eV to 200 eV with a scattering angle of 77deg. The scattered ion intensity of dissociative ions and parent molecular ions were measured as a function of incident ion energy. The observed data show that onset energies of dissociation for SiF{sub 3}{sup +} and SiF{sup +} ions are 30 eV and 40 eV, respectively. The obtained threshold energies are consistent with a impulsive collision model where the dissociation of incident ion is caused by vibrational excitation during collision. (author)

  10. Studies of light charged particle emission from fission and ER reactions in the system 344 MeV {sup 28}Si+{sup 121}Sb{yields}{sup 149}Tb (E{sup *}=240 MeV)

    Energy Technology Data Exchange (ETDEWEB)

    Kaplan, Morton E-mail: kaplan@cmchem.chem.cmu.edu; Copi, Craig J.; DeYoung, Paul A.; Gilfoyle, G.J.; Karol, Paul J.; Moses, David J.; Parker, W.E.; Rehm, K. Ernst; Sarafa, John; Vardaci, Emanuele

    2001-04-09

    Light charged particles (LCP) have been measured for the reaction 344 MeV {sup 28}Si+{sup 121}Sb in singles and in coincidence with evaporation residues (ER), fusion-fission fragments (FF), and other LCP. A major feature of this experiment was the use of a gas-filled magnetic spectrometer in the forward direction to separate ER from the much more abundant yield of elastically scattered projectiles and projectile-like fragments. The dominant sources of evaporative {sup 1}H and {sup 4}He emission are the ER (approximately 75%), with the remainder being largely associated with fission reactions. For these latter reactions, most of the {sup 1}H and {sup 4}He can be well accounted for by evaporation from the composite system prior to fission and by evaporation from the postfission fragments. LCP emission cross sections were determined for each identified source, and a comparison has been made to previous studies. From this comparison, indications were found for significant entrance channel effects, with the more asymmetric channels exhibiting much larger LCP cross sections. Statistical model predictions for ER emissions are in good agreement with observed LCP energy spectra, angular distributions, and integrated inclusive and exclusive cross sections, with all calculations using the same unique set of model parameters. This result contrasts strongly with recent reports for light mass systems, where model calculations were unable to simultaneously reproduce all observables.

  11. Thermal spike model interpretation of sputtering yield data for Bi thin films irradiated by MeV {sup 84}Kr{sup 15+} ions

    Energy Technology Data Exchange (ETDEWEB)

    Mammeri, S. [Centre de Recherche Nucléaire d’Alger, B.P. 399, 02 Bd. Frantz Fanon, Alger-gare, Algiers (Algeria); Ouichaoui, S., E-mail: souichaoui@gmail.com [Université des Sciences et de la Technologie H. Boumediene (USTHB), Faculté de Physique, Laboratoire SNIRM, B.P. 32, El-Alia, 16111 Bab Ezzouar, Algiers (Algeria); Ammi, H. [Centre de Recherche Nucléaire d’Alger, B.P. 399, 02 Bd. Frantz Fanon, Alger-gare, Algiers (Algeria); Pineda-Vargas, C.A. [iThemba LABS, National Research Foundation, P.O. Box 722, Somerset West 7129 (South Africa); Faculty of Health and Wellness Sciences, CPUT, P.O. Box 1906, Bellville 7535 (South Africa); Dib, A. [Centre de Recherche Nucléaire d’Alger, B.P. 399, 02 Bd. Frantz Fanon, Alger-gare, Algiers (Algeria); Msimanga, M. [iThemba LABS, National Research Foundation, P. Bag 11, Wits 2050, Johannesburg (South Africa); Department of Physics, Tshwane University of Technology, P. Bag X680, Pretoria 001 (South Africa)

    2015-07-01

    A modified thermal spike model initially proposed to account for defect formation in metals within the high heavy ion energy regime is adapted for describing the sputtering of Bi thin films under MeV Kr ions. Surface temperature profiles for both the electronic and atomic subsystems have been carefully evaluated versus the radial distance and time with introducing appropriate values of the Bi target electronic stopping power for multi-charged Kr{sup 15+} heavy ions as well as different target physical proprieties like specific heats and thermal conductivities. Then, the total sputtering yields of the irradiated Bi thin films have been determined from a spatiotemporal integration of the local atomic evaporation rate. Besides, an expected non negligible contribution of elastic nuclear collisions to the Bi target sputtering yields and ion-induced surface effects has also been considered in our calculation. Finally, the latter thermal spike model allowed us to derive numerical sputtering yields in satisfactorily agreement with existing experimental data both over the low and high heavy ion energy regions, respectively, dominated by elastic nuclear collisions and inelastic electronic collisions, in particular with our data taken recently for Bi thin films irradiated by 27.5 MeV Kr{sup 15+} heavy ions. An overall consistency of our model calculation with the predictions of sputtering yield theoretical models within the target nuclear stopping power regime was also pointed out.

  12. Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

    Science.gov (United States)

    Pellish, Jonathan A.; Reed, Robert A.; McMorrow, Dale; Vizkelethy, Gyorgy; Ferlet-Cavrois, Veronique; Baggio, Jacques; Duhamel, Olivier; Moen, Kurt A.; Phillips, Stanley D.; Diestelhorst, Ryan M.; hide

    2009-01-01

    SiGe HBT heavy ion-induced current transients are measured using Sandia National Laboratories microbeam and high- and low-energy broadbeam sources at the Grand Accelerateur National d'Ions Lourds and the University of Jyvaskyla. The data were captured using a custom broadband IC package and real-time digital phosphor oscilloscopes with at least 16 GHz of analog bandwidth. These data provide detailed insight into the effects of ion strike location, range, and LET.

  13. Topography development on selected inert gas and self-ion bombarded Si

    International Nuclear Information System (INIS)

    Vishnyakov, V.; Carter, G.; Goddard, D.T.; Nobes, M.J.

    1995-01-01

    An AFM and SEM study of the topography induced by 20 keV Si + , Ar + and Xe + ion bombardment of Si at 45 o incidence angles and for ion fluences between 10 17 and 10 20 cm -2 has been undertaken at room temperature. All species generate an atomic scale random roughness, the magnitude of which does not increase extensively with ion fluence, suggesting the operation of a local relaxation process. This nanometre scale roughness forms, for Ar and Xe, a background for coarser micrometre scale structures such as pits, chevrons and waves. Apart from isolated etch pits Si + irradiation generates no repetitive micrometre scale structures. Xe + irradiation produces well developed transverse waves while Ar + irradiation results in isolated chevron-like etch pit trains and ripple patches. This latter pattern evolves, with increasing ion fluence, to a corrugated facet structure. The reasons for the different behaviours are still not fully clarified. (author)

  14. CR-39 track detector calibration for H, He, and C ions from 0.1-0.5 MeV up to 5 MeV for laser-induced nuclear fusion product identification.

    Science.gov (United States)

    Baccou, C; Yahia, V; Depierreux, S; Neuville, C; Goyon, C; Consoli, F; De Angelis, R; Ducret, J E; Boutoux, G; Rafelski, J; Labaune, C

    2015-08-01

    Laser-accelerated ion beams can be used in many applications and, especially, to initiate nuclear reactions out of thermal equilibrium. We have experimentally studied aneutronic fusion reactions induced by protons accelerated by the Target Normal Sheath Acceleration mechanism, colliding with a boron target. Such experiments require a rigorous method to identify the reaction products (alpha particles) collected in detectors among a few other ion species such as protons or carbon ions, for example. CR-39 track detectors are widely used because they are mostly sensitive to ions and their efficiency is near 100%. We present a complete calibration of CR-39 track detector for protons, alpha particles, and carbon ions. We give measurements of their track diameters for energy ranging from hundreds of keV to a few MeV and for etching times between 1 and 8 h. We used these results to identify alpha particles in our experiments on proton-boron fusion reactions initiated by laser-accelerated protons. We show that their number clearly increases when the boron fuel is preformed in a plasma state.

  15. Surface damage on 6H–SiC by highly-charged Xeq+ ions irradiation

    International Nuclear Information System (INIS)

    Zhang, L.Q.; Zhang, C.H.; Han, L.H.; Xu, C.L.; Li, J.J.; Yang, Y.T.; Song, Y.; Gou, J.; Li, J.Y.; Ma, Y.Z.

    2014-01-01

    Surface damage on 6H–SiC irradiated by highly-charged Xe q+ (q = 18, 26) ions to different fluences in two geometries was studied by means of AFM, Raman scattering spectroscopy and FTIR spectrometry. The FTIR spectra analysis shows that for Xe 26+ ions irradiation at normal incidence, a deep reflection dip appears at about 930 cm −1 . Moreover, the reflectance on top of reststrahlen band decreases as the ion fluence increases, and the reflectance at tilted incidence is larger than that at normal incidence. The Raman scattering spectra reveal that for Xe 26+ ions at normal incidence, surface reconstruction occurs and amorphous stoichiometric SiC and Si–Si and C–C bonds are generated and original Si–C vibrational mode disappears. And the intensity of scattering peaks decreases with increasing dose. The AFM measurement shows that the surface swells after irradiation. With increasing ion fluence, the step height between the irradiated and the unirradiated region increases for Xe 18+ ions irradiation; while for Xe 26+ ions irradiation, the step height first increases and then decreases with increasing ion fluence. Moreover, the step height at normal incidence is higher than that at tilted incidence by the irradiation with Xe 18+ to the same ion fluence. A good agreement between the results from the three methods is found

  16. High Performance Li4Ti5O12/Si Composite Anodes for Li-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Chunhui Chen

    2015-08-01

    Full Text Available Improving the energy capacity of spinel Li4Ti5O12 (LTO is very important to utilize it as a high-performance Li-ion battery (LIB electrode. In this work, LTO/Si composites with different weight ratios were prepared and tested as anodes. The anodic and cathodic peaks from both LTO and silicon were apparent in the composites, indicating that each component was active upon Li+ insertion and extraction. The composites with higher Si contents (LTO:Si = 35:35 exhibited superior specific capacity (1004 mAh·g−1 at lower current densities (0.22 A·g−1 but the capacity deteriorated at higher current densities. On the other hand, the electrodes with moderate Si contents (LTO:Si = 50:20 were able to deliver stable capacity (100 mAh·g−1 with good cycling performance, even at a very high current density of 7 A·g−1. The improvement in specific capacity and rate performance was a direct result of the synergy between LTO and Si; the former can alleviate the stresses from volumetric changes in Si upon cycling, while Si can add to the capacity of the composite. Therefore, it has been demonstrated that the addition of Si and concentration optimization is an easy yet an effective way to produce high performance LTO-based electrodes for lithium-ion batteries.

  17. In situ TEM annealing of ion-amorphized Hi Nicalon S and Tyranno SA3 SiC fibers

    Energy Technology Data Exchange (ETDEWEB)

    Huguet-Garcia, J., E-mail: juan.huguet-garcia@cea.fr [CEA, DEN, Service de Recherches Métallurgiques Appliquées, F-91191 Gif-sur-Yvette (France); Jankowiak, A. [CEA, DEN, Service de Recherches Métallurgiques Appliquées, F-91191 Gif-sur-Yvette (France); Miro, S. [CEA, DEN, Service de Recherches en Métallurgie Physique, F-91191 Gif-sur-Yvette (France); Meslin, E. [CEA, DEN, Service de Recherches en Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Serruys, Y. [CEA, DEN, Service de Recherches en Métallurgie Physique, F-91191 Gif-sur-Yvette (France); Costantini, J.-M. [CEA, DEN, Service de Recherches Métallurgiques Appliquées, F-91191 Gif-sur-Yvette (France)

    2016-05-01

    In this work, recrystallization of ion-amorphized Hi Nicalon Type S and Tyranno SA3 SiC fibers (4 MeV Au{sup 3+}, 2 × 10{sup 15} cm{sup −2}) has been studied via in situ TEM annealing. Both fibers show a two-step recovery process of the radiation damage. First recovery stage starts at temperatures as low as 250 °C and implies recovery of the radiation swelling. Eventually the amorphous layer recrystallizes with no signs of polytype change (3C-SiC). Recrystallization temperatures yield 900–920 °C and 930 °C for the HNS and the TSA3 respectively. HNS fiber shows columnar recrystallization perpendicular to the amorphous–crystalline interphase with a grain growth rate of ∼20 nm min{sup −1}. On the other hand, recrystallization of TSA3 fiber is rather “spontaneous” with no preferential growth direction. The different recrystallization is attributed to the different microstructure of the fibers.

  18. In situ TEM annealing of ion-amorphized Hi Nicalon S and Tyranno SA3 SiC fibers

    International Nuclear Information System (INIS)

    Huguet-Garcia, J.; Jankowiak, A.; Miro, S.; Meslin, E.; Serruys, Y.; Costantini, J.-M.

    2016-01-01

    In this work, recrystallization of ion-amorphized Hi Nicalon Type S and Tyranno SA3 SiC fibers (4 MeV Au"3"+, 2 × 10"1"5 cm"−"2) has been studied via in situ TEM annealing. Both fibers show a two-step recovery process of the radiation damage. First recovery stage starts at temperatures as low as 250 °C and implies recovery of the radiation swelling. Eventually the amorphous layer recrystallizes with no signs of polytype change (3C-SiC). Recrystallization temperatures yield 900–920 °C and 930 °C for the HNS and the TSA3 respectively. HNS fiber shows columnar recrystallization perpendicular to the amorphous–crystalline interphase with a grain growth rate of ∼20 nm min"−"1. On the other hand, recrystallization of TSA3 fiber is rather “spontaneous” with no preferential growth direction. The different recrystallization is attributed to the different microstructure of the fibers.

  19. Characterization of Si(1 1 1) crystals implanted with Sb{sup +} ions and annealed by rapid thermal processing

    Energy Technology Data Exchange (ETDEWEB)

    Labbani, R.; Halimi, R.; Laoui, T.; Vantomme, A.; Pipeleers, B.; Roebben, G

    2003-09-15

    Monocrystalline Si(1 1 1) targets are implanted (at room temperature) with antimony ions at 120 keV energy to 5x10{sup 14} or 5x10{sup 15} Sb{sup +} cm{sup -2} dose. The samples are heat treated by means of rapid thermal processing (RTP) at 1000 deg. C during 60 s, under nitrogen atmosphere. In this work, we report the measured evolution of the silicon surface damage and the radiation damage recovery in relation to antimony dose and RTP processing. We also study the behavior of antimony dopant into Si(1 1 1) specimens. The investigation is carried out by He{sup +} Rutherford backscattering spectrometry (RBS; operating at 1.57 MeV energy in both random and channeling modes), X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques. It is shown that a good surface damage recovery is obtained for all the annealed samples. However, after RTP, a significant loss of antimony has occurred for the specimens which are implanted with 5x10{sup 15} Sb{sup +} cm{sup -2} dose. This suggests an antimony out-diffusion. Finally, a good morphological characterization of the specimens is provided by AFM.

  20. Experimental evaluation of the response of micro-channel plate detector to ions with 10s of MeV energies

    International Nuclear Information System (INIS)

    Jeong, Tae Won; Ter-Avetisyan, S.; Singh, P. K.; Kakolee, K. F.; Scullion, C.; Ahmed, H.; Hadjisolomou, P.; Alejo, A.; Kar, S.; Borghesi, M.

    2016-01-01

    The absolute calibration of a microchannel plate (MCP) assembly using a Thomson spectrometer for laser-driven ion beams is described. In order to obtain the response of the whole detection system to the particles’ impact, a slotted solid state nuclear track detector (CR-39) was installed in front of the MCP to record the ions simultaneously on both detectors. The response of the MCP (counts/particles) was measured for 5–58 MeV carbon ions and for protons in the energy range 2–17.3 MeV. The response of the MCP detector is non-trivial when the stopping range of particles becomes larger than the thickness of the detector. Protons with energies E ≳ 10 MeV are energetic enough that they can pass through the MCP detector. Quantitative analysis of the pits formed in CR-39 and the signal generated in the MCP allowed to determine the MCP response to particles in this energy range. Moreover, a theoretical model allows to predict the response of MCP at even higher proton energies. This suggests that in this regime the MCP response is a slowly decreasing function of energy, consistently with the decrease of the deposited energy. These calibration data will enable particle spectra to be obtained in absolute terms over a broad energy range.

  1. Experimental evaluation of the response of micro-channel plate detector to ions with 10s of MeV energies

    Science.gov (United States)

    Jeong, Tae Won; Singh, P. K.; Scullion, C.; Ahmed, H.; Kakolee, K. F.; Hadjisolomou, P.; Alejo, A.; Kar, S.; Borghesi, M.; Ter-Avetisyan, S.

    2016-08-01

    The absolute calibration of a microchannel plate (MCP) assembly using a Thomson spectrometer for laser-driven ion beams is described. In order to obtain the response of the whole detection system to the particles' impact, a slotted solid state nuclear track detector (CR-39) was installed in front of the MCP to record the ions simultaneously on both detectors. The response of the MCP (counts/particles) was measured for 5-58 MeV carbon ions and for protons in the energy range 2-17.3 MeV. The response of the MCP detector is non-trivial when the stopping range of particles becomes larger than the thickness of the detector. Protons with energies E ≳ 10 MeV are energetic enough that they can pass through the MCP detector. Quantitative analysis of the pits formed in CR-39 and the signal generated in the MCP allowed to determine the MCP response to particles in this energy range. Moreover, a theoretical model allows to predict the response of MCP at even higher proton energies. This suggests that in this regime the MCP response is a slowly decreasing function of energy, consistently with the decrease of the deposited energy. These calibration data will enable particle spectra to be obtained in absolute terms over a broad energy range.

  2. Experimental evaluation of the response of micro-channel plate detector to ions with 10s of MeV energies

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Tae Won; Ter-Avetisyan, S. [Center for Relativistic Laser Science, Institute of Basic Science (IBS), Gwangju 61005 (Korea, Republic of); Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005 (Korea, Republic of); Singh, P. K.; Kakolee, K. F. [Center for Relativistic Laser Science, Institute of Basic Science (IBS), Gwangju 61005 (Korea, Republic of); Scullion, C.; Ahmed, H.; Hadjisolomou, P.; Alejo, A.; Kar, S.; Borghesi, M. [School of Mathematics and Physics, The Queen’s University of Belfast, Belfast BT7 1NN (United Kingdom)

    2016-08-15

    The absolute calibration of a microchannel plate (MCP) assembly using a Thomson spectrometer for laser-driven ion beams is described. In order to obtain the response of the whole detection system to the particles’ impact, a slotted solid state nuclear track detector (CR-39) was installed in front of the MCP to record the ions simultaneously on both detectors. The response of the MCP (counts/particles) was measured for 5–58 MeV carbon ions and for protons in the energy range 2–17.3 MeV. The response of the MCP detector is non-trivial when the stopping range of particles becomes larger than the thickness of the detector. Protons with energies E ≳ 10 MeV are energetic enough that they can pass through the MCP detector. Quantitative analysis of the pits formed in CR-39 and the signal generated in the MCP allowed to determine the MCP response to particles in this energy range. Moreover, a theoretical model allows to predict the response of MCP at even higher proton energies. This suggests that in this regime the MCP response is a slowly decreasing function of energy, consistently with the decrease of the deposited energy. These calibration data will enable particle spectra to be obtained in absolute terms over a broad energy range.

  3. Semiconductor nanocrystals formed in SiO2 by ion implantation

    International Nuclear Information System (INIS)

    Zhu, J.G.; White, C.W.; Budai, J.D.; Withrow, S.P.; Chen, Y.

    1994-11-01

    Nanocrystals of group IV (Si, Ge and SiGe), III-V (GaAs), and II-VI (CdSe) semiconductor materials have been fabricated inside SiO 2 by ion implantation and subsequent thermal annealing. The microstructure of these nanocrystalline semiconductor materials has been studied by transmission electron microscopy (TEM). The nanocrystals form in near-spherical shape with random crystal orientations in amorphous SiO 2 . Extensive studies on the nanocrystal size distributions have been carried out for the Ge nanocrystals by changing the implantation doses and the annealing temperatures. Remarkable roughening of the nanocrystals occurs when the annealing temperature is raised over the melting temperature of the implanted semiconductor material. Strong red photoluminescence peaked around 1.67 eV has been achieved in samples with Si nanocrystals in SiO 2

  4. Spherical nanostructured Si/C composite prepared by spray drying technique for lithium ion batteries anode

    International Nuclear Information System (INIS)

    Chen Libao; Xie Xiaohua; Wang Baofeng; Wang Ke; Xie Jingying

    2006-01-01

    Spherical nanostructured Si/C composite was prepared by spray drying technique, followed by heat treatment, in which nanosized silicon and fine graphite particles were homogeneously embedded in carbon matrix pyrolyzed by phenol formaldehyde resin. Cyclic voltammetry tests showed two pairs of redox peaks corresponding to lithiation and delithiation of Si/C composite. The Si/C composite exhibited a reversible capacity of 635 mAh g -1 and good cycle performance used in lithium ion batteries. To improve cycle performance of this Si/C composite further, the carbon-coated Si/C composite was synthesized by the second spray drying and heat treatment processing. The cycle performance of carbon-coated Si/C composite was improved significantly, which was attributed to the formation of stable SEI passivation layers on the outer surface of carbon shell which protected the bared silicon from exposing to electrolyte directly

  5. Spherical nanostructured Si/C composite prepared by spray drying technique for lithium ion batteries anode

    Energy Technology Data Exchange (ETDEWEB)

    Chen Libao [Energy Science and Technology Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate School of Chinese Academy of Sciences, Beijing 100049 (China); Xie Xiaohua [Energy Science and Technology Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate School of Chinese Academy of Sciences, Beijing 100049 (China); Wang Baofeng [Department of Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Wang Ke [Energy Science and Technology Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Xie Jingying [Energy Science and Technology Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China) and Graduate School of Chinese Academy of Sciences, Beijing 100049 (China)]. E-mail: jyxie@mail.sim.ac.cn

    2006-07-15

    Spherical nanostructured Si/C composite was prepared by spray drying technique, followed by heat treatment, in which nanosized silicon and fine graphite particles were homogeneously embedded in carbon matrix pyrolyzed by phenol formaldehyde resin. Cyclic voltammetry tests showed two pairs of redox peaks corresponding to lithiation and delithiation of Si/C composite. The Si/C composite exhibited a reversible capacity of 635 mAh g{sup -1} and good cycle performance used in lithium ion batteries. To improve cycle performance of this Si/C composite further, the carbon-coated Si/C composite was synthesized by the second spray drying and heat treatment processing. The cycle performance of carbon-coated Si/C composite was improved significantly, which was attributed to the formation of stable SEI passivation layers on the outer surface of carbon shell which protected the bared silicon from exposing to electrolyte directly.

  6. Investigation of the channeling of light ions through gold crystals having thicknesses of several hundreds of angstroms from 0.5 to 2 MeV

    International Nuclear Information System (INIS)

    Poizat, J.C.; Remillieux, J.

    A technique to obtain a few hundred A thick self-supporting gold crystal is described. These crystals have been used to perform three channeling experiments with 0.5 to 2 MeV light ions: i) The wide angle scattering probability as a function of the distance from the crystal surface was studied for a beam of particles incident in planar and axial directions. ii) The influence of channeling on the light emission from crystal-excited atomic beams was investigated. iii) A strong channeling effect was found on the probability of transmission of a molecular beam of H 2 + ions through a thin crystal

  7. Effects of synchrotron x-rays on PVD deposited and ion implanted α-Si

    International Nuclear Information System (INIS)

    Yu, K.M.; Wang, L.; Walukiewicz, W.; Muto, S.; McCormick, S.; Abelson, J.R.

    1997-01-01

    The authors have studied the effects of intense X-ray irradiation on the structure of amorphous Si films. The films were obtained by either physical vapor deposition or by implantation of high energy ions into crystalline Si. They were exposed to different total doses of synchrotron X-rays. From the EXAFS and EXELFS measurements they find that an exposure to X-rays increases the Si coordination number. Also in the PVD films a prolonged X-ray exposure enlarges, by about 2%, the Si-Si bond length. Raman spectroscopy shows that Si amorphized with high energy ions contains small residual amounts of crystalline material. Irradiation of such films with X-rays annihilates those crystallites resulting in homogeneously amorphous layer with a close to four-fold coordination of Si atoms. This rearrangement of the local structure has a pronounced effect on the crystallization process of the amorphous films. Thermal annealing of X-ray irradiated ion amorphized films leads to nearly defect free solid phase epitaxy at 500 C. Also they observe a delay in the onset of the crystallization process in X-ray irradiated PVD films. They associate this with a reduced concentration of nucleation centers in the x-ray treated materials

  8. Gamma-ray production cross-sections for the interactions of 14.9 MeV neutrons with Si, Cu, Nb and Pb

    International Nuclear Information System (INIS)

    Fan Guoying

    1991-12-01

    Gamma rays produced in the interactions of 14.9 MeV neutrons with Si, Cu, Nb and Pb targets were studied. The neutron beam was produced with the T(d,n)He reaction using 300 KeV Cockroft-Walton accelerator. Absolute neutron flux was determined by the associated particle technique. The time-of-flight technique was used to reduce the background. The FWHM of neutron pulses was 1.5 ns. A Ge(Li) detector was used for gamma-ray detection. 39 gamma lines for Si, 39 gamma lines for Cu, 79 for Nb and 39 for Pb were detected. Most of these gamma rays were emitted in (n,γ), (n,n') and (n,2n) reactions. The measurements were made at 40 deg. C, 55 deg. C, 125 deg. C and 140 deg. C relative to the incident neutron beam. The results are presented in the form of the data tables. 9 refs, 11 figs, 19 tabs

  9. Ion tail formation and its effect on 14-MeV neutron generation in D-3He plasmas

    International Nuclear Information System (INIS)

    Matsuura, H.; Nakao, Y.; Kudo, K.

    1992-01-01

    This paper reports on the triton distribution function in D- 3 He plasmas which is distorted from a Maxwellian owing to the presence of a 1.01-MeV birth component. The deuteron-triton reaction rate (i.e., 14-MeV neutron generation rate) in the plasma should be smaller than the values evaluated by assuming a Maxwellian triton distribution. A local Fokker-Planck calculation shows that although the degree of the decrease in 14-MeV neutron generation strongly depends on the plasma conditions and also on the energy loss mechanism, it becomes appreciable in actual burning plasmas

  10. Modification of the microstructure and electronic properties of rutile TiO_2 thin films with 79 MeV Br ion irradiation

    International Nuclear Information System (INIS)

    Rath, Haripriya; Dash, P.; Singh, U.P.; Avasthi, D.K.; Kanjilal, D.; Mishra, N.C.

    2015-01-01

    Modifications induced by 79 MeV Br ions in rutile titanium dioxide thin films, synthesized by dc magnetron sputtering are presented. Irradiations did not induce any new XRD peak corresponding to any other phase. The area and the width of the XRD peaks were considerably affected by irradiation, and peaks shifted to lower angles. But the samples retained their crystallinity at the highest fluence (1 × 10"1"3 ions cm"−"2) of irradiation even though the electronic energy loss of 79 MeV Br ions far exceeds the reported threshold value for amorphization of rutile TiO_2. Fitting of the fluence dependence of the XRD peak area to Poisson equation yielded the radius of ion tracks as 2.4 nm. Ion track radius obtained from the simulation based on the thermal spike model matches closely with that obtained from the fluence dependence of the area under XRD peaks. Williamson–Hall analysis of the XRD spectra indicated broadening and shifting of the peaks are a consequence of irradiation induced defect accumulation leading to microstrains, as was also indicated by Raman and UV–Visible absorption study.

  11. Formation of slab waveguides in eulytine type BGO and CaF{sub 2} crystals by implantation of MeV nitrogen ions

    Energy Technology Data Exchange (ETDEWEB)

    Banyasz, I., E-mail: bakonyjako@yahoo.es [Department of Crystal Physics, Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Berneschi, S. [Centro Studi e Ricerche ' Enrico Fermi' , Piazza del Viminale 2, 00184 Roma (Italy); MDF-Lab, ' ' Nello Carrara' ' Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Khanh, N.Q.; Lohner, T. [Research Institute for Technical Physics and Materials Science of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Lengyel, K. [Department of Crystal Physics, Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Fried, M. [Research Institute for Technical Physics and Materials Science of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Peter, A. [Department of Crystal Physics, Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Petrik, P.; Zolnai, Z. [Research Institute for Technical Physics and Materials Science of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Watterich, A. [Department of Crystal Physics, Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Nunzi-Conti, G.; Pelli, S.; Righini, G.C. [MDF-Lab, ' ' Nello Carrara' ' Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy)

    2012-09-01

    Ion implantation, compared with other waveguide fabrication methods, has some unique advantages. It has proved to be a universal technique for producing waveguides in most optical materials. The authors of the present article reported fabrication of channel and slab waveguides in an Erbium-doped tungsten tellurite glass by implantation of MeV energy N{sup +} ions. The present article reports successful adaptation of the same technique to the fabrication of slab waveguides in eulytine type bismuth germanate (BGO) and CaF{sub 2} crystals. This is the first report on successful waveguide fabrication in these materials using 3.5 MeV N{sup +} ions at implanted fluences between 5 Multiplication-Sign 10{sup 15} and 4 Multiplication-Sign 10{sup 16} ions/cm{sup 2}. Spectroscopic ellipsometric measurements revealed the existence of guiding structures in both materials. M-line spectroscopic measurements indicated guiding effect in the as-implanted BGO up to 1550 nm and up to 980 nm in the as-implanted CaF{sub 2}. Ion implantation induced the appearance of three peaks in the UV/Vis absorption spectrum of CaF{sub 2}, that can be attributed to colour centres.

  12. Comparison between thermal annealing and ion mixing of alloyed Ni-W films on Si. I

    International Nuclear Information System (INIS)

    Pai, C.S.; Lau, S.S.; Poker, D.B.; Hung, L.S.

    1985-01-01

    The reactions between Ni-W alloys and Si substrates induced by thermal annealing and ion mixing were investigated and compared. Samples were prepared by sputtering of Ni-W alloys, both Ni-rich and W-rich, onto the Si substrates, and followed by either furnace annealing (200--900 0 C) or ion mixing (2 x 10 15 -- 4 x 10 16 86 Kr + ions/cm 2 ). The reactions were analyzed by Rutherford backscattering and x-ray diffraction (Read camera). In general, thermal annealing and ion mixing lead to similar reactions. Phase separation between Ni and W with Ni silicides formed next to the Si substrate and W silicide formed on the surface was observed for both Ni-rich and W-rich samples under thermal annealing. Phase separation was also observed for Ni-rich samples under ion mixing; however, a Ni-W-Si ternary compound was possibly formed for ion-mixed W-rich samples. These reactions were rationalized in terms of the mobilities of various atoms and the energetics of the systems

  13. Porous Si spheres encapsulated in carbon shells with enhanced anodic performance in lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hui; Wu, Ping, E-mail: zjuwuping@njnu.edu.cn; Shi, Huimin; Lou, Feijian; Tang, Yawen; Zhou, Tongge; Zhou, Yiming, E-mail: zhouyiming@njnu.edu.cn; Lu, Tianhong

    2014-07-01

    Highlights: • In situ magnesiothermic reduction route for the formation of porous Si@C spheres. • Unique microstructural characteristics of both porous sphere and carbon matrix. • Enhanced anodic performance in term of cycling stability for lithium-ion batteries. - Abstract: A novel type of porous Si–C micro/nano-hybrids, i.e., porous Si spheres encapsulated in carbon shells (porous Si@C spheres), has been constructed through the pyrolysis of polyvinylidene fluoride (PVDF) and subsequent magnesiothermic reduction methodology by using SiO{sub 2} spheres as precursors. The as-synthesized porous Si@C spheres have been applied as anode materials for lithium-ion batteries (LIBs), and exhibit enhanced anodic performance in term of cycling stability compared with bare Si spheres. For example, the porous Si@C spheres are able to exhibit a high reversible capacity of 900.0 mA h g{sup −1} after 20 cycles at a current density of 0.05 C (1 C = 4200 mA g{sup −1}), which is much higher than that of bare Si spheres (430.7 mA h g{sup −1})

  14. Porous Si spheres encapsulated in carbon shells with enhanced anodic performance in lithium-ion batteries

    International Nuclear Information System (INIS)

    Wang, Hui; Wu, Ping; Shi, Huimin; Lou, Feijian; Tang, Yawen; Zhou, Tongge; Zhou, Yiming; Lu, Tianhong

    2014-01-01

    Highlights: • In situ magnesiothermic reduction route for the formation of porous Si@C spheres. • Unique microstructural characteristics of both porous sphere and carbon matrix. • Enhanced anodic performance in term of cycling stability for lithium-ion batteries. - Abstract: A novel type of porous Si–C micro/nano-hybrids, i.e., porous Si spheres encapsulated in carbon shells (porous Si@C spheres), has been constructed through the pyrolysis of polyvinylidene fluoride (PVDF) and subsequent magnesiothermic reduction methodology by using SiO 2 spheres as precursors. The as-synthesized porous Si@C spheres have been applied as anode materials for lithium-ion batteries (LIBs), and exhibit enhanced anodic performance in term of cycling stability compared with bare Si spheres. For example, the porous Si@C spheres are able to exhibit a high reversible capacity of 900.0 mA h g −1 after 20 cycles at a current density of 0.05 C (1 C = 4200 mA g −1 ), which is much higher than that of bare Si spheres (430.7 mA h g −1 )

  15. Multiple scattering of MeV ions: Comparison between the analytical theory and Monte-Carlo and molecular dynamics simulations

    International Nuclear Information System (INIS)

    Mayer, M.; Arstila, K.; Nordlund, K.; Edelmann, E.; Keinonen, J.

    2006-01-01

    Angular and energy distributions due to multiple small angle scattering were calculated with different models, namely from the analytical Szilagyi theory, the Monte-Carlo code MCERD in binary collision approximation and the molecular dynamics code MDRANGE, for 2 MeV 4 He in Au at backscattering geometry and for 20 MeV 127 I recoil analysis of carbon. The widths and detailed shapes of the distributions are compared, and reasons for deviations between the different models are discussed

  16. Optical and electrical properties of Si-nanocrystals ion beam synthesized in SiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Garrido, B. E-mail: blas@el.ub.es; Lopez, M.; Perez-Rodriguez, A.; Garcia, C.; Pellegrino, P.; Ferre, R.; Moreno, J.A.; Morante, J.R.; Bonafos, C.; Carrada, M.; Claverie, A.; Torre, J. de la; Souifi, A

    2004-02-01

    We review in this paper our recent results on the correlation between the structural and the optoelectronic properties of Si nano crystals (Si-nc) embedded in SiO{sub 2}. We describe as well the development of both materials and technology approaches that have allowed us to successfully produce efficient and reliable LEDs by using only CMOS processes. Si-nc were synthesised in SiO{sub 2} by ion implantation plus annealing and display average diameters from 2.5 to 6 nm, as measured by electron microscopy. By varying the annealing time in a large scale we have been able to track the nucleation, pure growth and Ostwald ripening stages of the nanocrystal population. The most efficient structures have Si-ncs with average size of 3 nm and densities of about 10{sup 19} cm{sup -3}. We have estimated band-gap energies, lifetimes (20-200 {mu}s) and absorption cross-sections (10{sup -15}-10{sup -16} cm{sup 2}) as a function of size and surface passivation. Based on these results, we propose a mechanism for exciton recombination based on the strong coupling of excitons with the heterointerfaces. From highly luminescent Si-nc, LEDs consisting of MOS capacitors were fabricated. Stable red electroluminescence has been obtained at room temperature and the I-V characteristics prove that the current is related to a pure tunnelling process. Fowler-Nordheim injection is not observed during light emission for electric fields below 5 MV/cm. Thus, hot carrier injection is avoided and efficient and reliable devices are obtained.

  17. Computer simulation of range and damage distributions of He ions in SiC

    International Nuclear Information System (INIS)

    Miyagawa, Yoshiko; Ato, Yasuro; Miyagawa, Soji

    1984-01-01

    The experimental projected ranges of various heavy ions in an amorphous Si target in the energy region where the nuclear stopping dominates are compared with calculations using the computer simulation program SASAMAL with the Lenz-Jensen, Moliere, Thomas-Fermi and Kalbitzer-Oetzmann (KO) screening parameters. In most cases. the best agreement was obtained with the KO screening parameters. The projected range distributions of He ions implanted in an SiC target were calculated using SASAMAL with KO screening parameters. The agreement between the SASAMAL(KO) results and our experimental data was satisfactory when the electronic stopping parameter k=1.3 k sub(NS) was used. The energy and the depth distributions of the primary knock-on atoms and the depth distributions of the recoil energy density with various values of the displacement energy Esub(d) were also calculated using SASAMAL(KO) for He ions in SiC. (author)

  18. Measurement of the total reaction cross section for interactions between heavy ions (application to the system 12C+12C at 112MeV)

    International Nuclear Information System (INIS)

    Cherkaoui-Tadili, R.

    1982-01-01

    The total reaction cross-section σsub(R) for interactions between heavy ions is predicted to decrease rapidly with the energy of the incident projectile over the energy range 10 MeV/A - 100 MeV/A. We present here an experimental met σsub(R) to test the model based predictions. The method consists in counting the number of all incoming projectiles and the number of out going projectiles that did not interact with the target. The difference between these two numbers corresponds to the number of particles that reacted with the target nuclei and is therefore proportional to σsub(R). Values of σsub(R) have been measured for the system 12 C + 12 C at two incident energies of 112 MeV and 996 MeV. The results of 1444 +- 70 (112 MeV) and 994 +- 50 (996 MeV) show a total reaction cross-section decreasing with energy as predicted from the Glauber model and optical model fits to elastic scattering [fr

  19. Multiscale Engineered Si/SiO x Nanocomposite Electrodes for Lithium-Ion Batteries Using Layer-by-Layer Spray Deposition.

    Science.gov (United States)

    Huang, Chun; Kim, Ayoung; Chung, Dong Jae; Park, Eunjun; Young, Neil P; Jurkschat, Kerstin; Kim, Hansu; Grant, Patrick S

    2018-05-09

    Si-based high-capacity materials have gained much attention as an alternative to graphite in Li-ion battery anodes. Although Si additions to graphite anodes are now commercialized, the fraction of Si that can be usefully exploited is restricted due to its poor cyclability arising from the large volume changes during charge/discharge. Si/SiO x nanocomposites have also shown promising behavior, such as better capacity retention than Si alone because the amorphous SiO x helps to accommodate the volume changes of the Si. Here, we demonstrate a new electrode architecture for further advancing the performance of Si/SiO x nanocomposite anodes using a scalable layer-by-layer atomization spray deposition technique. We show that particulate C interlayers between the current collector and the Si/SiO x layer and between the separator and the Si/SiO x layer improved electrical contact and reduced irreversible pulverization of the Si/SiO x significantly. Overall, the multiscale approach based on microstructuring at the electrode level combined with nanoengineering at the material level improved the capacity, rate capability, and cycling stability compared to that of an anode comprising a random mixture of the same materials.

  20. Study of the 28Si(n,α)25Mg induced by 14,55 MeV neutrons

    International Nuclear Information System (INIS)

    Devillers, D.

    1963-02-01

    The aim of this work is the study of the 28 Si(n,α) 25 Mg nuclear reaction. The silicon target is in fact a p-n junction detector that is placed in a neutron beam produced thanks to the D-T reaction by 150 kv electrostatic accelerator. The impulses due to the alpha particles generated by the neutrons inside the junction are analysed with adequate electronic equipment. Protons are generated in other nuclear reactions, they have the same energy as the alpha particles, most of them are not contained in the junction but all contribute to the experimental spectra. In order to make the discrimination between alpha and protons efficient, the thickness of the junction must be in the same magnitude as the alpha particle range in the junction. Edge effects are likely to disturb emission spectra. Corrections are necessary but they require a fine knowledge of the physics of junctions. In the first chapter we review the different reactions that are induced by neutrons in silicon. The second chapter deals with the experimental conditions concerning the studies of the junction detector and of the 28 Si(n,α) 25 Mg reaction itself. The determination of the cross-section requires to know the incident neutron flux accurately, we have applied the method of the associated particle and we have calibrated a scintillation counter operating with an anthracene crystal to measure the neutron flux. The third chapter gathers all the calculations concerning the edge effects in the junction detector. In the fourth chapter we present the experimental results with and without taking into account the edge effects. We have measured the values of the cross-sections corresponding to the first 6 excited states of 25 Mg

  1. Thermoluminescence properties of Al{sub 2}O{sub 3}:Tb nanoparticles irradiated by gamma rays and 85 MeV C{sup 6+} ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Salah, Numan, E-mail: nsalah@kau.edu.sa [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Alharbi, Najlaa D. [Sciences Faculty for Girls, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Habib, Sami S. [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Lochab, S.P. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

    2015-11-15

    Carbon ions beam is recently recognized as an ideal cancer treatment modality, because of its excellent local tumor control. These ions have a high relative biological effectiveness resulting from high linear energy transfer (LET) and their sharp Bragg peak. However, the dose of those energetic ions needs to be measured with great precision using a proper dosimeter. Aluminum Oxide (Al{sub 2}O{sub 3}) is a highly luminescent phosphor widely used for radiation dosimetry using thermoluminesence (TL) technique. In this work nanoparticles of this material activated by different elements like Eu, Tb, Dy, Cu and Ag were evaluated for their TL response to gamma rays irradiation. Tb doped sample is found to be the most sensitive sample, which could be selected for exposure to 85 MeV C{sup 6+} ion beam in the fluence range 10{sup 9}–10{sup 13} ions/cm{sup 2}. The obtained result shows that C ion beam irradiated sample has a simple glow curve structure with a prominent glow peak at around 230 °C. This glow curve has a dosimetric peak better than those induced by gamma rays. This glow peak exhibits a linear response in the range 10{sup 9}–10{sup 11} ions/cm{sup 2}, corresponding to the equivalent absorbed doses 0.285–28.5 kGy. The absorbed doses, penetration depths and main energy loss were calculated using TRIM code based on the Monte Carlo simulation. The wide linear response of Al{sub 2}O{sub 3}:Tb nanoparticles along with the low fading makes this low cost nanomaterial a good candidate for C ion beam dosimetry. - Highlights: • Nanoparticles of Al{sub 2}O{sub 3} doped with Eu, Tb, Dy, Cu and Ag were synthesised. • They were evaluated for their TL response to gamma rays and C ion beam irradiation. • Tb doped sample is the most sensitive sample to gamma rays. • Al{sub 2}O{sub 3}:Tb was exposed to 85 MeV C{sup 6+} ion beam in the fluence range 10{sup 9}-10{sup 13} ions/cm{sup 2}. • The glow peak induced by C ions has a linear response in the range 10{sup 9

  2. Thermoluminescence properties of Al2O3:Tb nanoparticles irradiated by gamma rays and 85 MeV C6+ ion beam

    International Nuclear Information System (INIS)

    Salah, Numan; Alharbi, Najlaa D.; Habib, Sami S.; Lochab, S.P.

    2015-01-01

    Carbon ions beam is recently recognized as an ideal cancer treatment modality, because of its excellent local tumor control. These ions have a high relative biological effectiveness resulting from high linear energy transfer (LET) and their sharp Bragg peak. However, the dose of those energetic ions needs to be measured with great precision using a proper dosimeter. Aluminum Oxide (Al 2 O 3 ) is a highly luminescent phosphor widely used for radiation dosimetry using thermoluminesence (TL) technique. In this work nanoparticles of this material activated by different elements like Eu, Tb, Dy, Cu and Ag were evaluated for their TL response to gamma rays irradiation. Tb doped sample is found to be the most sensitive sample, which could be selected for exposure to 85 MeV C 6+ ion beam in the fluence range 10 9 –10 13 ions/cm 2 . The obtained result shows that C ion beam irradiated sample has a simple glow curve structure with a prominent glow peak at around 230 °C. This glow curve has a dosimetric peak better than those induced by gamma rays. This glow peak exhibits a linear response in the range 10 9 –10 11 ions/cm 2 , corresponding to the equivalent absorbed doses 0.285–28.5 kGy. The absorbed doses, penetration depths and main energy loss were calculated using TRIM code based on the Monte Carlo simulation. The wide linear response of Al 2 O 3 :Tb nanoparticles along with the low fading makes this low cost nanomaterial a good candidate for C ion beam dosimetry. - Highlights: • Nanoparticles of Al 2 O 3 doped with Eu, Tb, Dy, Cu and Ag were synthesised. • They were evaluated for their TL response to gamma rays and C ion beam irradiation. • Tb doped sample is the most sensitive sample to gamma rays. • Al 2 O 3 :Tb was exposed to 85 MeV C 6+ ion beam in the fluence range 10 9 -10 13 ions/cm 2 . • The glow peak induced by C ions has a linear response in the range 10 9 -10 11 ions/cm 2

  3. Formation of SiC using low energy CO2 ion implantation in silicon

    International Nuclear Information System (INIS)

    Sari, A.H.; Ghorbani, S.; Dorranian, D.; Azadfar, P.; Hojabri, A.R.; Ghoranneviss, M.

    2008-01-01

    Carbon dioxide ions with 29 keV energy were implanted into (4 0 0) high-purity p-type silicon wafers at nearly room temperature and doses in the range between 1 x 10 16 and 3 x 10 18 ions/cm 2 . X-ray diffraction analysis (XRD) was used to characterize the formation of SiC in implanted Si substrate. The formation of SiC and its crystalline structure obtained from above mentioned technique. Topographical changes induced on silicon surface, grains and evaluation of them at different doses observed by atomic force microscopy (AFM). Infrared reflectance (IR) and Raman scattering measurements were used to reconfirm the formation of SiC in implanted Si substrate. The electrical properties of implanted samples measured by four point probe technique. The results show that implantation of carbon dioxide ions directly leads to formation of 15R-SiC. By increasing the implantation dose a significant changes were also observed on roughness and sheet resistivity properties.

  4. Radicals and ions controlling by adjusting the antenna-substrate distance in a-Si:H deposition using a planar ICP for c-Si surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, H.P., E-mail: haipzhou@uestc.edu.cn [School of Energy Science and Engineering, University of Electronic Science and Technology of China, 2006 Xiyuan Ave., West High-Tech Zone, Chengdu, Sichuan, 611731 (China); Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xu, S., E-mail: shuyan.xu@nie.edu.sg [Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xu, M. [Key Laboratory of Information Materials of Sichuan Province & School of Electrical and Information Engineering, Southwest University for Nationalities, Chengdu, 610041 (China); Xu, L.X.; Wei, D.Y. [Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xiang, Y. [School of Energy Science and Engineering, University of Electronic Science and Technology of China, 2006 Xiyuan Ave., West High-Tech Zone, Chengdu, Sichuan, 611731 (China); Xiao, S.Q. [Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, 214122 (China)

    2017-02-28

    Highlights: • A planar ICP was used to grow a-Si:H films for c-Si surface passivation. • The direct- and remote-plasma was compared for high-quality c-Si surface passivation. • The remote ICP with controlled plasma species and ion bombardments is preferable for the surface passivation of c-Si. - Abstract: Being a key issue in the research and fabrication of silicon heterojunction (SHJ) solar cells, crystalline silicon (c-Si) surface passivation is theoretically and technologically intricate due to its complicate dependence on plasma characteristics, material properties, and plasma-material interactions. Here amorphous silicon (a-Si:H) grown by a planar inductively coupled plasma (ICP) reactor working under different antenna-substrate distances of d was used for the surface passivation of low-resistivity p-type c-Si. It is found that the microstructures (i.e., the crystallinity, Si-H bonding configuration etc.) and passivation function on c-Si of the deposited a-Si:H were profoundly influenced by the parameter of d, which primarily determines the types of growing precursors of SiH{sub n}/H contributing to the film growth and the interaction between the plasma and growing surface. c-Si surface passivation is analyzed in terms of the d-dependent a-Si:H properties and plasma characteristics. The controlling of radical types and ion bombardment on the growing surface through adjusting parameter d is emphasized.

  5. Decrease of Staphylococcal adhesion on surgical stainless steel after Si ion implantation

    International Nuclear Information System (INIS)

    Braceras, Iñigo; Pacha-Olivenza, Miguel A.; Calzado-Martín, Alicia; Multigner, Marta; Vera, Carolina; Broncano, Luis Labajos-; Gallardo-Moreno, Amparo M.; González-Carrasco, José Luis; Vilaboa, Nuria

    2014-01-01

    Highlights: • Si ion implantation of AISI 316LVM medical grade alloy might reduce bacterial adhesion and colonization. • Si ion implantation does not impair the attachment, viability and matrix maturation of human mesenchymal stem cells. • Nano-topography and surface chemistry changes account for the Si ion implantation induced effects. - Abstract: 316LVM austenitic stainless steel is often the material of choice on temporal musculoskeletal implants and surgical tools as it combines good mechanical properties and acceptable corrosion resistance to the physiologic media, being additionally relatively inexpensive. This study has aimed at improving the resistance to bacterial colonization of this surgical stainless steel, without compromising its biocompatibility and resistance. To achieve this aim, the effect of Si ion implantation on 316LVM has been studied. First, the effect of the ion implantation parameters (50 keV; fluence: 2.5–5 × 10 16 ions/cm 2 ; angle of incidence: 45–90°) has been assessed in terms of depth profiling of chemical composition by XPS and nano-topography evaluation by AFM. The in vitro biocompatibility of the alloy has been evaluated with human mesenchymal stem cells. Finally, bacterial adhesion of Staphylococcus epidermidis and Staphylococcus aureus on these surfaces has been assessed. Reduction of bacterial adhesion on Si implanted 316LVM is dependent on the implantation conditions as well as the features of the bacterial strains, offering a promising implantable biomaterial in terms of biocompatibility, mechanical properties and resistance to bacterial colonization. The effects of surface composition and nano-topography on bacterial adhesion, directly related to ion implantation conditions, are also discussed

  6. Decrease of Staphylococcal adhesion on surgical stainless steel after Si ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Braceras, Iñigo, E-mail: inigo.braceras@tecnalia.com [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Pacha-Olivenza, Miguel A. [CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Universidad de Extremadura, Departamento de Física Aplicada, Facultad de Ciencias, Av. Elvas s/n, 06006 Badajoz (Spain); Calzado-Martín, Alicia [Hospital Universitario La Paz-IdiPAZ, Paseo de la Castellana 261, 28046 Madrid (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Multigner, Marta [Centro Nacional de Investigaciones Metalúrgicas, CENIM-CSIC, Avda Gregorio del Amo 8, 28040 Madrid (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Vera, Carolina [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Broncano, Luis Labajos-; Gallardo-Moreno, Amparo M. [Universidad de Extremadura, Departamento de Física Aplicada, Facultad de Ciencias, Av. Elvas s/n, 06006 Badajoz (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); González-Carrasco, José Luis [Centro Nacional de Investigaciones Metalúrgicas, CENIM-CSIC, Avda Gregorio del Amo 8, 28040 Madrid (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Vilaboa, Nuria [Hospital Universitario La Paz-IdiPAZ, Paseo de la Castellana 261, 28046 Madrid (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); and others

    2014-08-15

    Highlights: • Si ion implantation of AISI 316LVM medical grade alloy might reduce bacterial adhesion and colonization. • Si ion implantation does not impair the attachment, viability and matrix maturation of human mesenchymal stem cells. • Nano-topography and surface chemistry changes account for the Si ion implantation induced effects. - Abstract: 316LVM austenitic stainless steel is often the material of choice on temporal musculoskeletal implants and surgical tools as it combines good mechanical properties and acceptable corrosion resistance to the physiologic media, being additionally relatively inexpensive. This study has aimed at improving the resistance to bacterial colonization of this surgical stainless steel, without compromising its biocompatibility and resistance. To achieve this aim, the effect of Si ion implantation on 316LVM has been studied. First, the effect of the ion implantation parameters (50 keV; fluence: 2.5–5 × 10{sup 16} ions/cm{sup 2}; angle of incidence: 45–90°) has been assessed in terms of depth profiling of chemical composition by XPS and nano-topography evaluation by AFM. The in vitro biocompatibility of the alloy has been evaluated with human mesenchymal stem cells. Finally, bacterial adhesion of Staphylococcus epidermidis and Staphylococcus aureus on these surfaces has been assessed. Reduction of bacterial adhesion on Si implanted 316LVM is dependent on the implantation conditions as well as the features of the bacterial strains, offering a promising implantable biomaterial in terms of biocompatibility, mechanical properties and resistance to bacterial colonization. The effects of surface composition and nano-topography on bacterial adhesion, directly related to ion implantation conditions, are also discussed.

  7. Preparation of SiC thin films by ion beam technology and PECVD

    International Nuclear Information System (INIS)

    Chen Changqing; Ren Congxin; Yang Lixin; Yan Jinlong; Zheng Zhihong; Zhou Zuyao; Chen Ping; Liu Xianghuai; Chen Xueliang

    1998-01-01

    The formation of β-SiC buried layers in p-type Si by ion beam methods is reported and a comparison of the results obtained under different experimental conditions is made. The preparation of amorphous SiC thin films by IBED is presented and the enhanced deposition of Xe + is found superior to that of Ar + . The work of synthesizing hydrogenated amorphous SiC films by RIBS and RIBAD is described with a discussion on the dependence of some physical parameters on the partial pressure ratio pCH 4 /pAr. Finally given is a brief introduction to a high quality α-SiC:H film which is prepared by PECVD and can exhibit green luminescence at room temperature

  8. XPS studies of SiO2 surface layers formed by oxygen ion implantation into silicon

    International Nuclear Information System (INIS)

    Schulze, D.; Finster, J.

    1983-01-01

    SiO 2 surface layers of 160 nm thickness formed by 16 O + ion implantation into silicon are examined by X-ray photoelectron spectroscopy measurements into the depth after a step-by-step chemical etching. The chemical nature and the thickness of the transition layer were determined. The results of the XPS measurements show that the outer surface and the bulk of the layers formed by oxygen implantation and subsequent high temperature annealing consist of SiO 2 . There is no evidence for Si or SiO/sub x/ (0 2 and Si is similar to that of thin grown oxide layers. Only its thickness is somewhat larger than in thermal oxide

  9. Characterization of the crystalline quality of β-SiC formed by ion beam synthesis

    International Nuclear Information System (INIS)

    Intarasiri, S.; Hallen, A.; Kamwanna, T.; Yu, L.D.; Possnert, G.; Singkarat, S.

    2006-01-01

    The ion beam synthesis (IBS) technique is applied to form crystalline silicon carbide (SiC) for future optoelectronics applications. Carbon ions at 80 and 40 keV were implanted into (1 0 0) high-purity p-type silicon wafers at room temperature and 400 deg. C, respectively, to doses in excess of 10 17 ions/cm 2 . Subsequent thermal annealing of the implanted samples was performed in a vacuum furnace at temperatures of 800, 900 and 1000 deg. C, respectively. Elastic recoil detection analysis was used to investigate depth distributions of the implanted ions and infrared transmittance (IR) measurement was used to characterize formation of SiC in the implanted Si substrate. Complementary to IR, Raman scattering measurements were also carried out. Levels of the residual damage distribution of the samples annealed at different temperatures were compared with that of the as-implanted one by Rutherford backscattering spectrometry (RBS) in the channeling mode. The results show that C-ion implantation at the elevated temperature, followed by high-temperature annealing, enhances the synthesis of crystalline SiC

  10. Current Progress of Si/Graphene Nanocomposites for Lithium-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Yinjie Cen

    2018-03-01

    Full Text Available The demand for high performance lithium-ion batteries (LIBs is increasing due to widespread use of portable devices and electric vehicles. Silicon (Si is one of the most attractive candidate anode materials for next generation LIBs. However, the high-volume change (>300% during lithium ion alloying/de-alloying leads to poor cycle life. When Si is used as the anode, conductive carbon is needed to provide the necessary conductivity. However, the traditional carbon coating method could not overcome the challenges of pulverization and unstable Solid Electrolyte Interphase (SEI layer during long-term cycling. Since 2010, Si/Graphene composites have been vigorously studied in hopes of providing a material with better cycling performance. This paper reviews current progress of Si/Graphene nanocomposites in LIBs. Different fabrication methods have been studied to synthesize Si/Graphene nanocomposites with promising electrochemical performances. Graphene plays a key enabling role in Si/Graphene anodes. However, the desired properties of graphene for this application have not been systematically studied and understood. Further systematic investigation of the desired graphene properties is suggested to better control the Si/Graphene anode performance.

  11. Si+ and N+ ion implantation for improving blood compatibility of medical poly(methyl methacrylate)

    International Nuclear Information System (INIS)

    Li, D.J.; Cui, F.Z; Cui, F.Z.

    1998-01-01

    Si + and N + ion implantation into medical poly(methyl methacrylate) (PMMA) were performed at an energy of 80 keV with fluences ranging from 5x10 12 to 5x10 15 ions/cm 2 at room temperature to improve blood compatibility. The results of the blood contacting measurements in vitro showed that the anticoagulability and anticalcific behaviour on the surface morphology were enhanced after ion implantation. No appreciable change in the surface morphology was detected by scanning electron microscopy (SEM). X-ray photoelectron spectroscopy (XPS) analysis indicated that ion implantation broke some original chemical bonds on the surface to form some new Si- and N-containing groups. These results were considered responsible for the enhancement in the blood compatibility of PMMA. (author)

  12. The ion capturing effect of 5° SiOx alignment films in liquid crystal devices

    Science.gov (United States)

    Huang, Yi; Bos, Philip J.; Bhowmik, Achintya

    2010-09-01

    We show that SiOx, deposited at 5° to the interior surface of a liquid crystal cell allows for a surprisingly substantial reduction in the ion concentration of liquid crystal devices. We have investigated this effect and found that this type of film, due to its surface morphology, captures ions from the liquid crystal material. Ion adsorption on 5° SiOx film obeys the Langmuir isotherm. Experimental results shown allow estimation of the ion capturing capacity of these films to be more than an order of 10 000/μm2. These types of materials are useful for new types of very low power liquid crystal devices such as e-books.

  13. AlN metal-semiconductor field-effect transistors using Si-ion implantation

    Science.gov (United States)

    Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomás

    2018-04-01

    We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230 °C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250 °C. The off-state breakdown voltage is 2370 V for drain-to-gate spacing of 25 µm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

  14. 28Si(16O,16O) 28Si at elab = 50.53,55,66,72,81,142.5 and 215.2 MeV

    International Nuclear Information System (INIS)

    Kumar, A.; Kumar, S.; Kumar, S.

    1994-01-01

    Most of the HI elastic scattering studies suffer from the inevitable ambiguity of a potential extracted from a limited set of forward angle data at low energies and also confined to small region of the potential tail. The 16O+28Si system overcomes this ambiguity as a variety of experimental data are available at vast energies over full angular range. Here, real part of the nuclear potential is microscopically calculated for both oblate and prolate shapes of silicon nucleus and an average is taken. The imaginary part of the nuclear potential is assumed by adjusting a dimensionless strength parameter in the above real part. This approach reproduces fairly well the experimental DCS over full angular range, excitation function at cm = 90 degrees and 180 degrees and also backangle anomaly (ALAS)

  15. Attenuation curves in concrete of neutrons from 100 to 400 MeV per nucleon He, C, Ne, Ar, Fe and Xe ions on various targets

    Energy Technology Data Exchange (ETDEWEB)

    Agosteo, S.; Nakamura, T.; Silari, M. E-mail: marco.silari@cern.ch; Zajacova, Z

    2004-04-01

    Data on transmission of neutrons in concrete generated by heavy ions of intermediate energies (of typically up to 1 GeV per nucleon) are of interest for shielding design of accelerators for use in both the research and in the medical field. The energy distributions of neutrons produced by ions of different species (from He to Xe) striking various targets at energies from 100 to 800 MeV per nucleon were recently measured by Kurosawa et al. in the angular range 0-90 deg. . These spectra were used as input data for Monte Carlo simulations to determine source terms and attenuation lengths in ordinary concrete. The present paper presents calculations for 100 MeV/u helium ions on a Cu target, 100 MeV/u carbon ions on C, Al, Cu and Pb, 100 MeV/u neon ions on Cu and Pb, 400 MeV/u carbon ions on C, Al, Cu and Pb, 400 MeV/u neon ions on Cu, 400 MeV/u Ar ions on Cu, 400 MeV/u Fe ions on Cu and 400 MeV/u Xe ions on Cu. The results include the contributions of all secondaries. Some of the resulting attenuation curves are best fitted by a double-exponential function rather than the usual single-exponential. The effect of various approximations introduced in the simulations is discussed. A comparison is made with shielding data for protons scaled with the ion mass number. A comparison is also made with a simple analytical model in use at GANIL.

  16. Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

    Science.gov (United States)

    Javanainen, Arto; Galloway, Kenneth F.; Nicklaw, Christopher; Bosser, Alexandre L.; Ferlet-Cavrois, Veronique; Lauenstein, Jean-Marie; Pintacuda, Francesco; Reed, Robert A.; Schrimpf, Ronald D.; Weller, Robert A.; hide

    2016-01-01

    Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence.

  17. Highly ordered nanopatterns on Ge and Si surfaces by ion beam sputtering

    International Nuclear Information System (INIS)

    Ziberi, B; Cornejo, M; Frost, F; Rauschenbach, B

    2009-01-01

    The bombardment of surfaces with low-energy ion beams leads to material erosion and can be accompanied by changes in the topography. Under certain conditions this surface erosion can result in well-ordered nanostructures. Here an overview of the pattern formation on Si and Ge surfaces under low-energy ion beam erosion at room temperature will be given. In particular, the formation of ripple and dot patterns, and the influence of different process parameters on their formation, ordering, shape and type will be discussed. Furthermore, the internal ion beam parameters inherent to broad beam ion sources are considered as an additional degree of freedom for controlling the pattern formation process. In this context: (i) formation of ripples at near-normal ion incidence, (ii) formation of dots at oblique ion incidence without sample rotation, (iii) transition between patterns, (iv) formation of ripples with different orientations and (v) long range ordered dot patterns will be presented and discussed.

  18. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition.

    Science.gov (United States)

    Zhang, Z; Wang, R F; Zhang, J; Li, H S; Zhang, J; Qiu, F; Yang, J; Wang, C; Yang, Y

    2016-07-29

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure.

  19. Plasma-laser ion discrimination by TOF technique applied to coupled SiC detectors.

    Science.gov (United States)

    Cavallaro, Salvatore

    2018-01-01

    The rate estimation of nuclear reactions induced in high intensity laser-target interaction (≥1016 W/cm2), is strongly depending on the neutron detection efficiency and ion charge discrimination, according to particles involved in exit open-channels. Ion discrimination is basically performed by means of analysis of pits observed on track detector, which is critically dependent on calibration and/or fast TOF devices based on SiC and diamond detectors. Last setup is used to determine the ion energy and to obtain a rough estimation of yields. However, for each TOF interval, the dependence of yield from the energy deposited in the detector sensitive region, introduces a distortion in the ion spectra. Moreover, if two ion species are present in the same spectrum, the discrimination of their contribution is not attainable. In this paper a new method is described which allows to discriminate the contribution of two ion species in the wide energy range of nuclear reactions induced in laser-target interactions. The method is based on charge response of two TOF-SiC detectors, of suitable thicknesses, placed in adjacent positions. In presence of two ion species, the response of the detectors, associated with different energy losses, can determine the ion specific contribution to each TOF interval.

  20. Measurement of the stopping power of water for carbon ions in the energy range of 1 MeV-6 MeV using the inverted Doppler-shift attenuation method

    Energy Technology Data Exchange (ETDEWEB)

    Rahm, Johannes Martin

    2016-10-31

    Cancer therapy using carbon ions has gained increasing interest in the last decade due to its advantageous dose distributions. For the dosimetry and treatment planning, the accurate knowledge of the stopping power of water for carbon ions is of crucial importance. In the high energy region, the stopping power can be calculated rather accurately by means of the Bethe-Bloch formula. In the case of projectile velocities comparable to those of the valence electrons of the target, these calculations are subject to large uncertainties. There exist no experimental data for the stopping power of water for projectile energies prevailing in the so-called Bragg peak region. The currently available stopping power data for water are derived from measurements in water vapour or D{sub 2}O ice and, hence, neglect the dependence on the state of aggregation. The stopping power of water for charged particles is of high interest not only for practical applications but also to consider how physical and chemical state of the target influence the collisional energy transfer. For the measurement of the stopping power of water, the inverted Doppler-shift attenuation method was used in this work. This method has the advantage that the projectile itself is not needed to be detected and can be slowed down entirely in the target. In this method, the stopping power is determined from the Doppler-shift of the gamma-quanta emitted by projectiles during their slow down. This experiment can be performed at atmospheric pressure and consequently, the stopping power of water can be measured in its real physiological condition. In this work, the stopping power of water for carbon ions was measured for the first time in the energy range between 1 MeV and 6 MeV covering the kinetic energies of carbon ions in the Bragg peak region. The experimental method is presented in detail along with the design of the apparatus and of the data acquisition system. A comprehensive analysis of instrumental effects

  1. Ion irradiation effects on the matrix phase of SiCf/SiC composites prepared by the whisker growing assisted CVI process

    International Nuclear Information System (INIS)

    Park, Kyeong Hwan; Park, Ji Yeon; Kang, Suk Min; Kim, Weon Ju; Jung, Choong Hwan; Ryu, Woo Seog

    2005-01-01

    SiC f /SiC composites are one of promising candidates for structural material of the next generation energy system such as GFR and fusion reactors. A number of fabrication methods have been studied for obtaining an outstanding SiC f /SiC composite with a high density, high crystallinity and purity. SiC f /SiC composites consisted of whisker-reinforced matrix have a great potential at the viewpoint both of the fabrication process and the mechanical properties. SiC whiskers formed between SiC fibers improve the densification of SiC matrix during CVI process. In addition, the reinforced whiskers would be likely to enhance the mechanical properties of matrix and SiC f /SiC composite. While there has been significant developmental work on manufacturing the SiC f /SiC composite by the whisker growing assisted CVI process, detailed understanding of what effects the complex in the operating conditions combined with realistic materials property data is not adequately understood. Especially, its irradiation effects are even less clear and not well understood. A method of charged-particle irradiation is the most important R and D topics for simulating the core conditions of the advanced nuclear systems. Many studies on radiation effects of SiC and SiC f /SiC composites using a method of ion irradiation have in progress for R and D of the advanced nuclear systems. In this present work, changes of the mechanical property of SiC whisker-reinforced matrix in SiC f /SiC composite were evaluated by means of the depth sensing indentation method before and after chargedparticle irradiation

  2. A novel facility for 3D micro-irradiation of living cells in a controlled environment by MeV ions.

    Science.gov (United States)

    Mäckel, V; Meissl, W; Ikeda, T; Clever, M; Meissl, E; Kobayashi, T; Kojima, T M; Imamoto, N; Ogiwara, K; Yamazaki, Y

    2014-01-01

    We present a novel facility for micro-irradiation of living targets with ions from a 1.7 MV tandem accelerator. We show results using 1 MeV protons and 2 MeV He(2+). In contrast to common micro-irradiation facilities, which use electromagnetic or electrostatic focusing and specially designed vacuum windows, we employ a tapered glass capillary with a thin end window, made from polystyrene with a thickness of 1-2 μm, for ion focusing and extraction. The capillary is connected to a beamline tilted vertically by 45°, which allows for easy immersion of the extracted ions into liquid environment within a standard cell culture dish. An inverted microscope is used for simultaneously observing the samples as well as the capillary tip, while a stage-top incubator provides an appropriate environment for the samples. Furthermore, our setup allows to target volumes in cells within a μm(3) resolution, while monitoring the target in real time during and after irradiation.

  3. A new study of 25Mg(α, n)28Si angular distributions at Eα =3-5 MeV

    International Nuclear Information System (INIS)

    Caciolli, A.; Marchi, T.; Depalo, R.; Collazuol, G.; Montagnoli, G.; Appannababu, S.; Cinausero, M.; Gramegna, F.; Mastinu, P.; Rossi Alvarez, C.; Rigato, V.; Blasi, N.; Wieland, O.; Broggini, C.; Fabris, D.; Menegazzo, R.; Degerlier, M.; Leone, M.

    2014-01-01

    The observation of 26 Al gives us the proof of active nucleosynthesis in the Milky Way. However the identification of the main producers of 26 Al is still a matter of debate. Many sites have been proposed, but our poor knowledge of the nuclear processes involved introduces high uncertainties. In particular, the limited accuracy on the 25 Mg(α, n) 28 Si reaction cross section has been identified as the main source of nuclear uncertainty in the production of 26 Al in C/Ne explosive burning in massive stars, which has been suggested to be the main source of 26 Al in the Galaxy. We studied this reaction through neutron spectroscopy at the CN Van de Graaff accelerator of the Legnaro National Laboratories. Thanks to this technique we are able to discriminate the (α, n) events from possible contamination arising from parasitic reactions. In particular, we measured the neutron angular distributions at 5 different beam energies (between 3 and 5 MeV) in the 17.5 circle - 106 circle laboratory system angular range. The presented results disagree with the assumptions introduced in the analysis of a previous experiment. (orig.)

  4. Time-of-flight secondary ion mass spectrometry with energetic cluster ion impact ionization for highly sensitive chemical structure characterization

    Energy Technology Data Exchange (ETDEWEB)

    Hirata, K., E-mail: k.hirata@aist.go.jp [National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan); Saitoh, Y.; Chiba, A.; Yamada, K.; Narumi, K. [Takasaki Advanced Radiation Research Institute (TARRI), Japan Atomic Energy Agency (JAEA), Takasaki, Gumma 370-1292 (Japan)

    2013-11-01

    Energetic cluster ions with energies of the order of sub MeV or greater were applied to time-of-flight (TOF) secondary ion (SI) mass spectrometry. This gave various advantages including enhancement of SIs required for chemical structure characterization and prevention of charging effects in SI mass spectra for organic targets. We report some characteristic features of TOF SI mass spectrometry using energetic cluster ion impact ionization and discuss two future applications of it.

  5. Cracking in Si-based anodes for Li-ion batteries

    NARCIS (Netherlands)

    Aifantis, KE; Dempsey, JP; Hackney, SA

    2005-01-01

    In attempts to increase the anode capacity of rechargeable Li-ion batteries, composite materials with micro- and nano-scale domains of Li active material surrounded by Li inactive material are being investigated. Materials such as Si, Al and Sn that provide capacities between 900 and 4000 mAh g(-1)

  6. Improving the performance of si-based li-ion battery anodes by utilizing phosphorene encapsulation

    NARCIS (Netherlands)

    Peng, B.; Xu, Y.; Mulder, F.M.

    2017-01-01

    Si-based anode materials in Li-ion batteries (LIBs) suffer from severe volume expansion/contraction during repetitive discharge/charge, which results in the pulverization of active materials, continuous growth of solid electrolyte interface (SE!) layers, loss of electrical conduction, and,

  7. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    Science.gov (United States)

    Prakash, A. P. Gnana; Praveen, K. C.; Pushpa, N.; Cressler, John D.

    2015-05-01

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to 60Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  8. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, A. P. Gnana, E-mail: gnanaprakash@physics.uni-mysore.ac.in; Praveen, K. C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, Karnataka-570006 (India); Pushpa, N. [Department of PG Studies in Physics, JSS College, Ooty Road, Mysore-570025 (India); Cressler, John D. [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332 (United States)

    2015-05-15

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to {sup 60}Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  9. Heavy Ion Microbeam- and Broadbeam-Induced Current Transients in SiGe HBTs

    Science.gov (United States)

    Pellish, Jonathan A.; Reed, R. A.; McMorrow, D.; Vizkelethy, G.; Ferlet-Cavrois, V.; Baggio, J.; Duhamel, O.; Moen, K. A.; Phillips, S. D.; Diestelhorst, R. M.; hide

    2009-01-01

    IBM 5AM SiGe HBT is device-under-test. High-speed measurement setup. Low-impedance current transient measurements. SNL, JYFL, GANIL. Microbeam to broadbeam position inference. Improvement to state-of-the-art. Microbeam (SNL) transients reveal position dependent heavy ion response, Unique response for different device regions Unique response for different bias schemes. Similarities to TPA pulsed-laser data. Broadbeam transients (JYFL and GANIL) provide realistic heavy ion response. Feedback using microbeam data. Overcome issues of LET and ion range with microbeam. **Angled Ar-40 data in full paper. Data sets yield first-order results, suitable for TCAD calibration feedback.

  10. Low energy Ar ion bombardment damage of Si, GaAs, and InP surfaces

    International Nuclear Information System (INIS)

    Williams, R.S.

    1982-01-01

    Argon bombardment damage to (100) surfaces of Si, GaAs, and InP for sputter ion-gun potentials of 1, 2, and 3 kilovolts was studied using Rutherford backscattering. Initial damage rates and saturation damage levels were determined. Bombardment damage sensitivity increased for the sequence Si, GaAs, and InP. Saturation damage levels for Si and GaAs correspond reasonably to LSS projected range plus standard deviation estimates; damage to InP exceeded this level significantly. For an ion-gun potential of 3 keV, the initial sputter yield of P from an InP surface exceeded the sputter yield of In by four atoms per incident Ar projectile. (author)

  11. Enhancing optical gains in Si nanocrystals via hydrogenation and cerium ion doping

    International Nuclear Information System (INIS)

    Wang, Dong-Chen; Li, Yan-Li; Song, Sheng-Chi; Guo, Wen-Ping; Lu, Ming; Chen, Jia-Rong

    2014-01-01

    We report optical gain enhancements in Si nanocrystals (Si-NCs) via hydrogenation and Ce 3+ ion doping. Variable stripe length technique was used to obtain gains. At 0.3 W/cm 2 pumping power density of pulsed laser, net gains were observed together with gain enhancements after hydrogenation and/or Ce 3+ ion doping; gains after loss corrections were between 89.52 and 341.95 cm −1 ; and the photoluminescence (PL) lifetime was found to decrease with the increasing gain enhancement. At 0.04 W/cm 2 power density, however, no net gain was found and the PL lifetime increased with the increasing PL enhancement. The results were discussed according to stimulated and spontaneous excitation and de-excitation mechanisms of Si-NCs.

  12. Synergistic effects of iodine and silver ions co-implanted in 6H-SiC

    Science.gov (United States)

    Kuhudzai, R. J.; Malherbe, J. B.; Hlatshwayo, T. T.; van der Berg, N. G.; Devaraj, A.; Zhu, Z.; Nandasiri, M.

    2015-12-01

    Motivated by the aim of understanding the release of fission products through the SiC coating of fuel kernels in modern high temperature nuclear reactors, a fundamental investigation is conducted to understand the synergistic effects of implanted silver (Ag) and iodine (I) in 6H-SiC. The implantation of the individual species, as well as the co-implantation of 360 keV ions of I and Ag at room temperature in 6H-SiC and their subsequent annealing behaviour has been investigated by Secondary Ion Mass Spectrometry (SIMS), Atom Probe Tomography (APT) and X-ray Photoelectron Spectroscopy (XPS). SIMS and APT measurements indicated the presence of Ag in the co-implanted samples after annealing at 1500 °C for 30 h in sharp contrast to the samples implanted with Ag only. In samples implanted with Ag only, complete loss of the implanted Ag was observed. However, for I only implanted samples, some iodine was retained. APT of annealed co-implanted 6H-SiC showed clear spatial association of Ag and I clusters in SiC, which can be attributed to the observed I assisted retention of Ag after annealing. Such detailed studies will be necessary to identify the fundamental mechanism of fission products migration through SiC coatings.

  13. Resonant Raman scattering in ion-beam-synthesized Mg2Si in a silicon matrix

    International Nuclear Information System (INIS)

    Baleva, M.; Zlateva, G.; Atanassov, A.; Abrashev, M.; Goranova, E.

    2005-01-01

    Resonant Raman scattering by ion beam synthesized in silicon matrix Mg 2 Si phase is studied. The samples are prepared with the implantation of 24 Mg + ions with dose 4x10 17 cm -2 and with two different energies 40 and 60 keV into (100)Si substrates. The far infrared spectra are used as criteria for the formation of the Mg 2 Si phase. The Raman spectra are excited with different lines of Ar + laser, with energies of the lines lying in the interval from 2.40 to 2.75 eV. The resonant scattering can be investigated using these laser lines, as far as according to the Mg 2 Si band structure, there are direct gaps with energies in the same region. The energy dependences of the scattered intensities in the case of the scattering by the allowed F 2g and the forbidden LO-type modes are experimentally obtained and theoretically interpreted. On the base of the investigation energies of the interband transitions in the Mg 2 Si are determined. It is found also that the resonant Raman scattering appears to be a powerful tool for characterization of a material with inclusions in it. In the particular case it is concluded that the Mg 2 Si phase is present in the form of a surface layer in the sample, prepared with implantation energy 40 keV and as low-dimensional precipitates, embedded in the silicon matrix, in the sample, prepared with the higher implantation energy

  14. Integrated picosecond photoconductors produced on bulk Si substrates

    International Nuclear Information System (INIS)

    Hammond, R.B.; Paulter, N.G.; Wagner, R.S.; Eisenstadt, W.R.

    1984-01-01

    We report optoelectronic cross-correlation measurements of the response of photoconductor pulsers and sampling gates formed on Si wafers. These photoconductors were fabricated with standard integrated circuit fabrication techniques followed by shadow-masked ion beam irradiation. Successful ion beam irradiations were performed with 2 MeV 2 H, 6 MeV He, and 30 MeV O with doses of 10 15 ion/cm 2 . Deep damage was necessary to eliminate long-lived background currents in the cross correlations. Carrier lifetimes of 96, 47, and 29 ps were observed in photoconductors with carrier mobilities of approx.250 cm 2 /Vs

  15. Elastic and inelastic scattering of {sup 15}N ions by {sup 9}Be at 84 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Rudchik, A.T., E-mail: rudchik@kinr.kiev.ua [Institute for Nuclear Research, Ukrainian Academy of Sciences, Prospect Nauki 47, 03680 Kyiv (Ukraine); Chercas, K.A. [Institute for Nuclear Research, Ukrainian Academy of Sciences, Prospect Nauki 47, 03680 Kyiv (Ukraine); Kemper, K.W. [Physics Department, Florida State University, Tallahassee, FL 32306-4350 (United States); Rusek, K. [Heavy Ion Laboratory of Warsaw University, ul. L. Pasteura 5A, PL-02-093 Warsaw (Poland); Rudchik, A.A.; Herashchenko, O.V. [Institute for Nuclear Research, Ukrainian Academy of Sciences, Prospect Nauki 47, 03680 Kyiv (Ukraine); Koshchy, E.I. [Kharkiv National University, pl. Svobody 4, 61077 Kharkiv (Ukraine); Pirnak, Val.M. [Institute for Nuclear Research, Ukrainian Academy of Sciences, Prospect Nauki 47, 03680 Kyiv (Ukraine); Piasecki, E.; Trzcińska, A. [Heavy Ion Laboratory of Warsaw University, ul. L. Pasteura 5A, PL-02-093 Warsaw (Poland); Sakuta, S.B. [Russian Research Center “Kurchatov Institute”, Kurchatov Sq. 1, 123182 Moscow (Russian Federation); Siudak, R. [H. Niewodniczański Institute of Nuclear Physics, Polish Academy of Sciences, ul. Radzikowskiego 152, PL-31-342 Cracow (Poland); Strojek, I. [National Center for Nuclear Researches, ul. Hoża 69, PL-00-681 Warsaw (Poland); Stolarz, A. [Heavy Ion Laboratory of Warsaw University, ul. L. Pasteura 5A, PL-02-093 Warsaw (Poland); Ilyin, A.P.; Ponkratenko, O.A.; Stepanenko, Yu.M.; Shyrma, Yu.O. [Institute for Nuclear Research, Ukrainian Academy of Sciences, Prospect Nauki 47, 03680 Kyiv (Ukraine); Szczurek, A. [H. Niewodniczański Institute of Nuclear Physics, Polish Academy of Sciences, ul. Radzikowskiego 152, PL-31-342 Cracow (Poland); Uleshchenko, V.V. [Institute for Nuclear Research, Ukrainian Academy of Sciences, Prospect Nauki 47, 03680 Kyiv (Ukraine)

    2016-03-15

    Angular distributions of the {sup 9}Be + {sup 15}N elastic and inelastic scattering were measured at E{sub lab}({sup 15}N) = 84 MeV (E{sub c.m.} = 31.5 MeV) for the 0–6.76 MeV states of {sup 9}Be and 0–6.32 MeV states of {sup 15}N. The data were analyzed within the optical model and coupled-reaction-channels method. The elastic and inelastic scattering, spin reorientations of {sup 9}Be in ground and excited states and {sup 15}N in excited states as well as the most important one- and two-step transfer reactions were included in the channels-coupling scheme. The parameters of the {sup 9}Be + {sup 15}N optical potential of Woods–Saxon form as well as deformation parameters of these nuclei were deduced. The analysis showed that the {sup 9}Be + {sup 15}N pure potential elastic scattering dominates at the forward angles whereas the ground state spin reorientation of {sup 9}Be gives a major contribution to the elastic scattering cross sections at the large angles. Contributions from particle transfers are found to be negligible for the present scattering system.

  16. Anisotropic expansion and amorphization of Ga{sub 2}O{sub 3} irradiated with 946 MeV Au ions

    Energy Technology Data Exchange (ETDEWEB)

    Tracy, Cameron L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Department of Geological Sciences, Stanford University, Stanford, CA 94305 (United States); Lang, Maik [Department of Nuclear Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Severin, Daniel; Bender, Markus [GSI Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt (Germany); Trautmann, Christina [GSI Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt (Germany); Technische Universität Darmstadt, 64287 Darmstadt (Germany); Ewing, Rodney C. [Department of Geological Sciences, Stanford University, Stanford, CA 94305 (United States)

    2016-05-01

    The structural response of β-Ga{sub 2}O{sub 3} to irradiation-induced electronic excitation was investigated. A polycrystalline pellet of this material was irradiated with 946 MeV Au ions and the resulting structural modifications were characterized using in situ X-ray diffraction analysis at various ion fluences, up to 1 × 10{sup 13} cm{sup −2}. Amorphization was induced, with the accumulation of the amorphous phase following a single-impact mechanism in which each ion produces an amorphous ion track along its path. Concurrent with this phase transformation, an increase in the unit cell volume of the material was observed and quantified using Rietveld refinement. This unit cell expansion increased as a function of ion fluence before saturating at 1.8%. This effect is attributed to the generation of defects in an ion track shell region surrounding the amorphous track cores. The unit cell parameter increase was highly anisotropic, with no observed expansion in the [0 1 0] direction. This may be due to the structure of β-Ga{sub 2}O{sub 3}, which exhibits empty channels of connected interstitial sites oriented in this direction.

  17. Violence of heavy-ion reactions from neutron multiplicity: 11 to 20A MeV /sup 20/Ne+ /sup 238/U

    International Nuclear Information System (INIS)

    Jahnke, U.; Ingold, G.; Hilscher, D.; Lehmann, M.; Schwinn, E.; Zank, P.

    1986-01-01

    The suitability of the neutron multiplicity as a gauge for the violence of medium-energy heavy-ion reactions is investigated for the first time. For this purpose the number of neutrons emitted from fission reactions induced by 220-, 290-, and 400-MeV /sup 20/Ne on /sup 238/U is registered event-by-event with a large 4π scintillator tank. It is shown that the neutron multiplicity is indeed closely related to the two quantities characterizing the violence: the induced total intrinsic excitation and the linear momentum transfer

  18. The description of charge transfer in fast negative ions scattering on water covered Si(100) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Lin; Qiu, Shunli; Liu, Pinyang; Xiong, Feifei; Lu, Jianjie; Liu, Yuefeng; Li, Guopeng; Liu, Yiran; Ren, Fei; Xiao, Yunqing; Gao, Lei; Zhao, Qiushuang; Ding, Bin; Li, Yuan [School of Nuclear Science and Technology, Lanzhou University, 730000 (China); Key Laboratory of Special Function Materials and Structure Design, Ministry of Education, Lanzhou University, 730000 (China); Guo, Yanling, E-mail: guoyanling@lzu.edu.cn [School of Nuclear Science and Technology, Lanzhou University, 730000 (China); Key Laboratory of Special Function Materials and Structure Design, Ministry of Education, Lanzhou University, 730000 (China); Chen, Ximeng, E-mail: chenxm@lzu.edu.cn [School of Nuclear Science and Technology, Lanzhou University, 730000 (China); Key Laboratory of Special Function Materials and Structure Design, Ministry of Education, Lanzhou University, 730000 (China)

    2016-11-30

    Highlights: • We first observe that negative-ion fractions present no variation with the doping concentration, which is very different from the results of low energy Li neutralization from doped Si samples. • Our work shows that the affinity levels and collision time significantly counteract the band gap effect on negative ion formation. The work will improve our understanding on electron transfer on semiconductor surfaces associated with doping. • In addition, we build a complete theoretical framework to quantitatively calculate the negative-ion fractions. • Our work is related to charge transfer on semiconductor surfaces, which will be of interest to a broad audience due to the wide necessity of the knowledge of charge exchange on semiconductor surfaces in different fields. - Abstract: Doping has significantly affected the characteristics and performance of semiconductor electronic devices. In this work, we study the charge transfer processes for 8.5–22.5 keV C{sup −} and F{sup −} ions scattering on H{sub 2}O-terminated p-type Si(100) surfaces with two different doping concentrations. We find that doping has no influence on negative-ion formation for fast collisions in this relatively high energy range. Moreover, we build a model to calculate negative ion fractions including the contribution from positive ions. The calculations support the nonadiabatic feature of charge transfer.

  19. Carbon nanotube growth from catalytic nano-clusters formed by hot-ion-implantation into the SiO{sub 2}/Si interface

    Energy Technology Data Exchange (ETDEWEB)

    Hoshino, Yasushi, E-mail: yhoshino@kanagawa-u.ac.jp [Department of Information Sciences, Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293 (Japan); Arima, Hiroki; Yokoyama, Ai; Saito, Yasunao; Nakata, Jyoji [Department of Information Sciences, Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293 (Japan)

    2012-07-01

    We have studied growth of chirality-controlled carbon nanotubes (CNTs) from hot-implantation-formed catalytic nano-clusters in a thermally grown SiO{sub 2}/Si substrate. This procedure has the advantage of high controllability of the diameter and the number of clusters by optimizing the conditions of the ion implantation. In the present study, Co{sup +} ions with ion dose of 8 Multiplication-Sign 10{sup 16} cm{sup -2} are implanted in the vicinity of the SiO{sub 2}/Si interface at 300 Degree-Sign C temperature. The implanted Co atoms located in the SiO{sub 2} layer has an amorphous-like structure with a cluster diameter of several nm. In contrast, implanted Co atoms in the Si substrate are found to take a cobalt silicide structure, confirmed by the high-resolution image of transmission electron microscope. CNTs are grown by microwave-plasma-enhanced chemical vapor deposition. We have confirmed a large amount of vertically-aligned multi-walled CNTs from the Co nano-clusters formed by the hot-ion-implantation near the SiO{sub 2}/Si interface.

  20. Synergistic effects of iodine and silver ions co-implanted in 6H–SiC

    International Nuclear Information System (INIS)

    Kuhudzai, R.J.; Malherbe, J.B.; Hlatshwayo, T.T.; Berg, N.G. van der; Devaraj, A.; Zhu, Z.; Nandasiri, M.

    2015-01-01

    Motivated by the aim of understanding the release of fission products through the SiC coating of fuel kernels in modern high temperature nuclear reactors, a fundamental investigation is conducted to understand the synergistic effects of implanted silver (Ag) and iodine (I) in 6H–SiC. The implantation of the individual species, as well as the co-implantation of 360 keV ions of I and Ag at room temperature in 6H–SiC and their subsequent annealing behaviour has been investigated by Secondary Ion Mass Spectrometry (SIMS), Atom Probe Tomography (APT) and X-ray Photoelectron Spectroscopy (XPS). SIMS and APT measurements indicated the presence of Ag in the co-implanted samples after annealing at 1500 °C for 30 h in sharp contrast to the samples implanted with Ag only. In samples implanted with Ag only, complete loss of the implanted Ag was observed. However, for I only implanted samples, some iodine was retained. APT of annealed co-implanted 6H–SiC showed clear spatial association of Ag and I clusters in SiC, which can be attributed to the observed I assisted retention of Ag after annealing. Such detailed studies will be necessary to identify the fundamental mechanism of fission products migration through SiC coatings. - Highlights: • Co-implantation of Ag and I ions in 6H–SiC was performed. • Clear spatial association of Ag and I clusters observed after annealing. • Complete loss of Ag after high temperature annealing of silver only sample. • Iodine was retained in iodine only sample after high temperature annealing. • Iodine was found to play a role in the retention of Ag in the co-implanted samples.

  1. Temperature and ion-mass dependence of amorphization dose for ion beam irradiated zircon (ZrSiO4)

    International Nuclear Information System (INIS)

    Wang, L.M.; Ewing, R.C.; Eby, R.K.

    1992-12-01

    The temperature dependence of amorphization dose for zircon under 1.5 MeV Kr ion irradiation has been investigated using the ANL HVEM-Tandem Facility. Three regimes were observed in the amorphization dose-temperature curve. In the first regime (15 to 300 K), the critical amorphization dose increased from 3.06 to 4.5 ions/nm 2 . In the second regime (300 to 473 K), there is little change in the amorphizationdose. In the third regime (> 473 K), the amorphization dose increased exponentially to 8.3 ions/nm 2 at 913 K. This temperature dependence of amorphization dose can be described by two processes with different activation energies (0.018 and 0.31 eV respectively) which are attributed to close pair recombination in the cascades at low temperatures and radiation-enhanced epitaxial recrystallization at higher temperatures. The upper temperature limit for amorphization of zircon is estimated to be 1100 K. The ion-mass dependence of the amorphization dose (in dpa) has also been discussed in terms of the energy to recoils based on data obtained from He, Ne, Ar, Kr, Xe irradiations and a 238 Pu-doped sample

  2. SiO{sub 2} on silicon: behavior under heavy ion irradiation; SiO{sub 2} sur silicium: comportement sous irradiation avec des ions lourds

    Energy Technology Data Exchange (ETDEWEB)

    Rotaru, C

    2004-03-15

    Heavy ion irradiation was performed on a-SiO{sub 2} layers deposited on Si. Damage of the surface was studied by means of Atomic Force Microscopy. Hillocks appear for an electronic stopping power higher than 16 keV/nm. The height of the hillocks decreases with the thickness of the oxide layer. Infrared Spectroscopy studies show that the damage threshold for a-SiO{sub 2} is at an electronic stopping power of 2 keV/nm. Therefore it is probable that the origin of the hillocks comes from the silicon layer. This could be explain within the frame of thermal spike model. The theoretical thresholds are 8 keV/nm and 1.8 keV/nm for silicon and a-SiO{sub 2} respectively. Chemical etching after irradiation gives a technical possibility to create nano-pits, whose size and shape can be controlled. Additionally, these structures allowed to determine the AFM tip radius. (author)

  3. Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO2

    International Nuclear Information System (INIS)

    Stepina, N. P.; Dvurechenskii, A. V.; Armbrister, V. A.; Kesler, V. G.; Novikov, P. L.; Gutakovskii, A. K.; Kirienko, V. V.; Smagina, Zh. V.; Groetzschel, R.

    2007-01-01

    Pulsed low-energy (200 eV) ion-beam induced nucleation during Ge deposition on thin SiO 2 film was used to form dense homogeneous arrays of Ge nanocrystals. The ion-beam action is shown to stimulate the nucleation of Ge nanocrystals when being applied after thin Ge layer deposition. Temperature and flux variation was used to optimize the nanocrystal size and array density required for memory device. Kinetic Monte Carlo simulation shows that ion impacts open an additional channel of atom displacement from a nanocrystal onto SiO 2 surface. This results both in a decrease in the average nanocrystal size and in an increase in nanocrystal density

  4. Influence of Adhesive System on Performance of SiO/C Lithium-ion Battery

    Directory of Open Access Journals (Sweden)

    Teng Xin

    2015-01-01

    Full Text Available Silicon based anode material is turning into the research hot point of lithium-ion battery material field due to Si inside supporting higher capacity. Furthermore binder applied as major accessory material of anode system could bring anode material & current collector together, thus the influence given by binder system to battery performance becomes the key point. The paper describes the procedure of adopting commercial LiCoO2 SiO/C as composite material & electrolyte, with using styrene butadiene rubber and acrylic acid copolymer as binder to figure out lithium-ion battery with 2.5Ah, which is testified to present better performance on cold temperature & cycle life plus having a little bit swelling compared with the lithium-ion battery using only styrene butadiene rubber as binder.

  5. SiO2 on silicon: behavior under heavy ion irradiation

    International Nuclear Information System (INIS)

    Rotaru, C.

    2004-03-01

    Heavy ion irradiation was performed on a-SiO 2 layers deposited on Si. Damage of the surface was studied by means of Atomic Force Microscopy. Hillocks appear for an electronic stopping power higher than 16 keV/nm. The height of the hillocks decreases with the thickness of the oxide layer. Infrared Spectroscopy studies show that the damage threshold for a-SiO 2 is at an electronic stopping power of 2 keV/nm. Therefore it is probable that the origin of the hillocks comes from the silicon layer. This could be explain within the frame of thermal spike model. The theoretical thresholds are 8 keV/nm and 1.8 keV/nm for silicon and a-SiO 2 respectively. Chemical etching after irradiation gives a technical possibility to create nano-pits, whose size and shape can be controlled. Additionally, these structures allowed to determine the AFM tip radius. (author)

  6. Degradation effects ad Si-depth profiling in photoresists using ion beam analysis

    International Nuclear Information System (INIS)

    Ijzendoorn, L.J. van; Schellekens, J.P.W.

    1989-01-01

    The reaction of silicon-containing vapour with a photoresist layer, as used in dry developable lithographic processes, was studied with Rutherford backscattering spectrometry (RBS). Degradation of the polymer layer was observed, but the total amount of incorporated Si was found to be constant during the measurement. Si-depth profiles were found to be independent of dose and in agreement with profiles obtained with secondary ion mass spectrometry (SIMS). The detection of hydrogen by elastic recoil detection (ERD) was used to study the degradation in detail. The decrease in hydrogen countrate from a layer of polystyrene on Si in combination with the shift of the Si-substrate edge in the corresponding RBS spectra was used for a model description. Only one degradation cross-section for hydrogen and one for carbon, both independent of beam current and dose, were required for a successful fit of the experimental data. (orig.)

  7. Interface plasmon-phonons modes in ion-beam synthesized Mg2Si nanolayers

    International Nuclear Information System (INIS)

    Baleva, M.; Zlateva, G.

    2009-01-01

    Raman scattering of samples, representing n- and p-type Si matrix with unburied Mg 2 Si nanolayers, formed by ion-beam synthesis, are studied. Despite the features in the Raman spectra attributed to the polariton modes with frequencies between those of the TO and LO phonons, additional features outside this interval are detected. The frequencies of these features are very sensitive to the plasma frequency, being different in the n- and p-type Si matrix and to the annealing time. The latter implies the generation of interface plasmonphonons modes. The frequencies of the interface plasmon-phonon modes are calculated and compared with the experimental results. The order of the carrier concentration in Mg 2 Si, the data of which are not available in the literature, is evaluated. (authors)

  8. The effect of ions on the magnetic moment of vacancy for ion-implanted 4H-SiC

    Science.gov (United States)

    Peng, B.; Zhang, Y. M.; Dong, L. P.; Wang, Y. T.; Jia, R. X.

    2017-04-01

    The structural properties and the spin states of vacancies in ion implanted silicon carbide samples are analyzed by experimental measurements along with first-principles calculations. Different types and dosages of ions (N+, O+, and B+) were implanted in the 4H-silicon carbide single crystal. The Raman spectra, positron annihilation spectroscopy, and magnetization-magnetic field curves of the implanted samples were measured. The fitting results of magnetization-magnetic field curves reveal that samples implanted with 1 × 1016 cm-2 N+ and O+ ions generate paramagnetic centers with various spin states of J = 1 and J = 0.7, respectively. While for other implanted specimens, the spin states of the paramagnetic centers remain unchanged compared with the pristine sample. According to the positron annihilation spectroscopy and first-principles calculations, the change in spin states originates from the silicon vacancy carrying a magnetic moment of 3.0 μB in the high dosage N-implanted system and 2.0 μB in the O-doped system. In addition, the ratio of the concentration of implanted N ions and silicon vacancies will affect the magnetic moment of VSi. The formation of carbon vacancy which does not carry a local magnetic moment in B-implanted SiC can explain the invariability in the spin states of the paramagnetic centers. These results will help to understand the magnetic moments of vacancies in ion implanted 4H-SiC and provide a possible routine to induce vacancies with high spin states in SiC for the application in quantum technologies and spintronics.

  9. Ripple structures on surfaces and underlying crystalline layers in ion beam irradiated Si wafers

    Energy Technology Data Exchange (ETDEWEB)

    Grenzer, J.; Muecklich, A. [Forschungszentrum Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, Dresden (Germany); Biermanns, A.; Grigorian, S.A.; Pietsch, U. [Institute of Physics, University of Siegen (Germany)

    2009-08-15

    We report on the formation of ion beam induced ripples in Si(001) wafers when bombarded with Ar+ ions at an energy of 60 keV. A set of samples varying incidence and azimuthal angles of the ion beam with respect to the crystalline surface orientation was studied by two complementary near surface sensitive techniques, namely atomic force microscopy and depth-resolved X-ray grazing incidence diffraction (GID). Additionally, cross-section TEM investigations were carried out. The ripple-like structures are formed at the sample surface as well as at the buried amorphous-crystalline interface. Best quality of the ripple pattern was found when the irradiating ion beam was aligned parallel to the (111) planes. The quality decreases rapidly if the direction of the ion beam deviates from (111). (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  10. Luminescence of rare-earth ions in Mg[sub 2]SiO[sub 4

    Energy Technology Data Exchange (ETDEWEB)

    Van der Voort, D; Maat-Gersdorf, I de; Blasse, G [Rijksuniversiteit Utrecht (Netherlands)

    1992-01-01

    The luminescence of the rare-earth ions Eu[sup 3+], Tb[sup 3+] and Ce[sup 3+] in Mg[sub 2]SiO[sub 4] is reported. The Tb[sup 3+] ion shows a change in emission colour from blue to green depending on the charge compensator. This is ascribed to a difference in coupling of the Tb[sup 3+] ion to the vibrational lattice modes. The Eu[sup 3+] ion has an average quantum efficiency under charge-transfer excitation of 60% at 4.2 and 20% at 300 K. The Ce[sup 3+] emission is situated in the blue and shows a Stokes shift of 3 500 cm[sup -1]. The relaxation of these ions in the excited state is discussed in terms of their positive effective charge and the stiffness of their surroundings.

  11. Ultra-low temperature process by ion shower doping technique for poly-Si TFTs on plastics

    International Nuclear Information System (INIS)

    Kim, Jong-Man; Lim, Huck; Kim, Do-Young; Jung, Ji-Sim; Kwon, Jang-Yeon; Hong, Wan-Shick; Noguchi, Takashi

    2006-01-01

    An ion doping process was performed by using a basic ion shower system. After ion doping and subsequent activation of the dopants in the Si film by excimer laser annealing (ELA), we studied the crystallinity of the Si surface using UV-reflectance spectroscopy and the sheet resistance by using 4-point probe measurements. To prevent excessive temperature increase on the plastic substrate during ion shower doping, the plasma shower was applied in a series of short pulses. As a result, dopant ions were efficiently incorporated and were activated into the a-Si film on plastic substrate after ELA. The sheet resistance decreased with increase of actual doping time, which corresponds to the incorporated dose. Also, we confirmed a distinct relationship between the crystallinity and the sheet resistance. This work shows that pulsed ion shower doping is a promising technique for ultra-low-temperature poly-Si TFTs on plastic substrates.

  12. Si- and Sn-containing SiOCN-based nanocomposites as anode materials for lithium ion batteries. Synthesis, thermodynamic characterization and modeling

    Energy Technology Data Exchange (ETDEWEB)

    Rohrer, Jochen; Albe, Karsten [Technische Univ. Darmstadt (Germany). Materialmodellierung; Vrankovic, Dragoljub; Riedel, Ralf; Graczyk-Zajac, Magdalena [Technische Univ. Darmstadt (Germany). Disperse Feststoffe; Cupid, Damian; Seifert, Hans J. [Karlsruher Institut fuer Technologie, Eggenstein-Leopoldshafen (Germany). IAM - Angewandte Werkstoffphysik

    2017-11-15

    Novel nanocomposites consisting of silicon/tin nanoparticles (n-Si/n-Sn) embedded in silicon carbonitride (SiCN) or silicon oxycarbide (SiOC) ceramic matrices are investigated as possible anode materials for Li-ion batteries. The goal of our study is to exploit the large mass specific capacity of Si/Sn (3 579 mAh g{sup -1}/994 mAh g{sup -1}), while avoiding rapid capacity fading due to the large volume changes of Si/Sn during Li insertion. We show that a large amount (∝30-40 wt.%) of disordered carbon phase is dispersed within the SiOC/SiCN matrix and stabilizes the Si/Sn nanoparticles with respect to extended reversible lithium ion storage. Silicon nanocomposites are prepared by mixing of a polymeric precursor with commercial and ''home-synthesized'' crystalline and amorphous silicon. Tin nanocomposites, in contrast, are prepared using a single precursor approach, which allows the in-situ generation of Sn nanoparticles homogeneously dispersed within the SiOC host. The best electrochemical stability along with capacities of 600 - 700 mAh g{sup -1} is obtained when amorphous/porous silicon is used. Mechanisms contributing to the increase of storage capacity and the cycle stability are clarified by analyzing elemental composition, local solid-state structures, intercalation hosts and Li-ion mobility. Our work is supplemented by first-principles based atomistic modeling and thermochemical measurements.

  13. Tribology of silicon-thin-film-coated SiC ceramics and the effects of high energy ion irradiation

    International Nuclear Information System (INIS)

    Kohzaki, Masao; Noda, Shoji; Doi, Harua

    1990-01-01

    The sliding friction coefficients and specific wear of SiC ceramics coated with a silicon thin film (Si/SiC) with and without subsequent Ar + irradiation against a diamond pin were measured with a pin-on-disk tester at room temperature in laboratory air of approximately 50% relative humidity without oil lubrication for 40 h. The friction coefficient of Ar + -irradiated Si/SiC was about 0.05 with a normal load of 9.8 N and remained almost unchanged during the 40 h test, while that of SiC increased from 0.04 to 0.12 during the test. The silicon deposition also reduced the specific wear of SiC to less than one tenth of that of the uncoated SiC. Effectively no wear was detected in Si/SiC irradiated to doses of over 2x10 16 ions cm -2 . (orig.)

  14. Structural and optical modification in 4H-SiC following 30 keV silver ion irradiation

    Science.gov (United States)

    Kaushik, Priya Darshni; Aziz, Anver; Siddiqui, Azher M.; Lakshmi, G. B. V. S.; Syväjärvi, Mikael; Yakimova, Rositsa; Yazdi, G. Reza

    2018-05-01

    The market of high power, high frequency and high temperature based electronic devices is captured by SiC due to its superior properties like high thermal conductivity and high sublimation temperature and also due to the limitation of silicon based electronics in this area. There is a need to investigate effect of ion irradiation on SiC due to its application in outer space as outer space is surrounded both by low and high energy ion irradiations. In this work, effect of low energy ion irradiation on structural and optical property of 4H-SiC is investigated. ATR-FTIR is used to study structural modification and UV-Visible spectroscopy is used to study optical modifications in 4H-SiC following 30 keV Ag ion irradiation. FTIR showed decrease in bond density of SiC along the ion path (track) due to the creation of point defects. UV-Visible absorption spectra showed decrease in optical band gap from 3.26 eV to 2.9 eV. The study showed degradation of SiC crystallity and change in optical band gap following low energy ion irradiation and should be addressed while fabricationg devices based on SiC for outer space application. Additionally, this study provides a platform for introducing structural and optical modification in 4H-SiC using ion beam technology in a controlled manner.

  15. Synthesis of Ultrathin Si Nanosheets from Natural Clays for Lithium-Ion Battery Anodes.

    Science.gov (United States)

    Ryu, Jaegeon; Hong, Dongki; Choi, Sinho; Park, Soojin

    2016-02-23

    Two-dimensional Si nanosheets have been studied as a promising candidate for lithium-ion battery anode materials. However, Si nanosheets reported so far showed poor cycling performances and required further improvements. In this work, we utilize inexpensive natural clays for preparing high quality Si nanosheets via a one-step simultaneous molten salt-induced exfoliation and chemical reduction process. This approach produces high purity mesoporous Si nanosheets in high yield. As a control experiment, two-step process (pre-exfoliated silicate sheets and subsequent chemical reduction) cannot sustain their original two-dimensional structure. In contrast, one-step method results in a production of 5 nm-thick highly porous Si nanosheets. Carbon-coated Si nanosheet anodes exhibit a high reversible capacity of 865 mAh g(-1) at 1.0 A g(-1) with an outstanding capacity retention of 92.3% after 500 cycles. It also delivers high rate capability, corresponding to a capacity of 60% at 20 A g(-1) compared to that of 2.0 A g(-1). Furthermore, the Si nanosheet electrodes show volume expansion of only 42% after 200 cycles.

  16. The reactivity of ion-implanted SiC

    International Nuclear Information System (INIS)

    McHargue, C.J.; Lewis, M.B.; Williams, J.M.; Appleton, B.R.

    1985-01-01

    Implantation of chromium into single crystal or polycrystalline α-SiC produces a surface amorphous layer for displacement damage greater than about 0.2 displacements per atom at room temperature. The enhanced chemical reactivity of such specimens was studied by two methods: chemical etching rate and oxidation rate. The chemical etching rates in a saturated solution of 50% K 3 Fe(CN) 6 plus 50% KOH were measured. The etching rate for the amorphous layer was 2.4-3.7 times that of the polycrystalline samples and 3.0-4.1 times that of the single-crystal samples. Polycrystalline specimens were exposed to flowing oxygen for 1 h at 1300 0 C. Rutherford backscattering and the nuclear reaction 16 O(d,p) 17 O* were used to determine the amount of oxygen on the surface. The amount of oxygen (and the thickness of oxide) over the amorphous region was 1.67 times that over the crystalline region. The relative thicknesses of the oxide on the amorphous and crystalline regions were confirmed by measuring the sputtering time required to remove the oxygen signal in an Auger spectrometer. (Auth.)

  17. The role of nitrogen in luminescent Si nanoprecipitate formation during annealing of Si ion-implanted SiO sub 2 layers

    CERN Document Server

    Kachurin, G A; Zhuravlev, K S; Ruault, M O

    2001-01-01

    SiO sub 2 layers were implanted with 25 keV Si sup + and 13 keV N sup + ions with the doses of (1-4) x 10 sup 1 sup 6 cm sup - sup 2 and (0.2-2) x 10 sup 1 sup 6 cm sup - sup 2 , respectively. Then the samples were annealed at 900-1100 deg C to form luminescent silicon nanoprecipitates. The nitrogen effect on the process is controlled by photoluminescence spectra. It is found out that the photoluminescence intensity increases considerably at the appropriate ratio between silicon and nitrogen. It has been concluded that the interaction of nitrogen with excessive silicon results in increasing the number of precipitation centers. This raises the nanocrystals number and reduces their mean size

  18. Porous Nano-Si/Carbon Derived from Zeolitic Imidazolate Frameworks@Nano-Si as Anode Materials for Lithium-Ion Batteries

    International Nuclear Information System (INIS)

    Song, Yonghai; Zuo, Li; Chen, Shouhui; Wu, Jiafeng; Hou, Haoqing; Wang, Li

    2015-01-01

    Graphical abstract: Display Omitted -- Highlights: •The porous cage-like carbon/Si nanocomposites were synthesized based on nano-Si@ZIF-8-templatedmethod. •The nano-Si was uniformly embedded in porous amorphous carbon matrices. •The porous dodecahedral carbon framework effectively accommodates the volume variation of Si during the discharge/charge process. •The Si/C nanocomposites exhibit superior reversible capacity of 1168 mA h g −1 after 100 cycles. -- Abstract: Novel porous cage-like carbon (C)/nano-Si nanocomposites as anode materials for lithium-ion batteries (LIBs) was prepared based on nano-Si@zeolitic imidazolate frameworks (ZIF-8)-templated method. In this strategy, p-aminobenzoic acid was initially grafted onto nano-Si to form benzoic acid-functionalized nano-Si, and then nano-Si@ZIF-8 was constructed by alternately growing Zn(NO 3 ) 2 ·6H 2 O and 2-methylimidazolate on benzoic acid-functionalized nano-Si under ultrasound. The novel porous cage-like nano-Si/C nanocomposites were fabricated by pyrolyzing the resulted nano-Si@ZIF-8 and washing with HCl to remove off ZnO. Scanning electron microscopy, transmission electron microscopy, X-ray powder diffraction, Raman spectra and N 2 adsorption/desorption isotherms were employed to characterize the porous cage-like nano-Si/C nanocomposites. The resulted nano-Si/C nanocomposites as anode materials for LIBs showed a high reversible capacity of ∼1168 mA h g −1 at 100 mA g −1 after 100 cycles, which was higher than many previously reported Si/C nanocomposites. The porous nanostructure, high specific surface area and good electrical conductivity of the cage-like nano-Si/C nanocomposites contributed together to the good performance for LIBs. It might open up a new way for application of silicon materials

  19. Fabrication of planar optical waveguides by 6.0 MeV silicon ion implantation in Nd-doped phosphate glasses

    Science.gov (United States)

    Shen, Xiao-Liang; Dai, Han-Qing; Zhang, Liao-Lin; Wang, Yue; Zhu, Qi-Feng; Guo, Hai-Tao; Li, Wei-Nan; Liu, Chun-Xiao

    2018-04-01

    We report the fabrication of a planar optical waveguide by silicon ion implantation into Nd-doped phosphate glass at an energy of 6.0 MeV and a dose of 5.0 × 1014 ions/cm2. The change in the surface morphology of the glass after the implantation can be clearly observed by scanning electron microscopy. The measurement of the dark mode spectrum of the waveguide is conducted using a prism coupler at 632.8 nm. The refractive index distribution of the waveguide is reconstructed by the reflectivity calculation method. The near-field optical intensity profile of the waveguide is measured using an end-face coupling system. The waveguide with good optical properties on the glass matrix may be valuable for the application of the Nd-doped phosphate glass in integrated optical devices.

  20. Effect of 520 MeV Kr{sup 20+} ion irradiation on the critical current density of Bi-2212 single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Terai, Takayuki; Ito, Yasuyuki [Tokyo Univ. (Japan). Faculty of Engineering; Kishio, Kouji

    1996-10-01

    Change in magnetic properties of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+y} (Bi-2212) single crystals due to Kr{sup 20+} ion irradiation is reported, focused on critical current density and irreversibility magnetic field. The Bi-2212 single crystal specimens (3x3x0.3 mm{sup 3}) were prepared by the floating zone method. Each specimen was irradiated with 520 MeV Kr{sup 20+} ions of 10{sup 10}-10{sup 11} cm{sup -2} in the fluence. Magnetic hysteresis was measured at 4.2K-60K with a vibrating sample magnetometer before and after irradiation. Very large enhancement was observed in critical current density and irreversibility magnetic field above 20K. (author)

  1. Cross sections for pion, proton, and heavy-ion production from 800 MeV protons incident upon aluminum and silicon

    Energy Technology Data Exchange (ETDEWEB)

    Dicello, J.F. (Clarkson Univ., Potsdam, NY (USA)); Schillaci, M.E.; Liu Lonchang (Los Alamos National Lab., NM (USA))

    1990-01-01

    When high-energy cosmic rays interact with electronics or other materials in a spacecraft, including the occupants themselves, pions are produced as secondary particles. These secondary pions interact further in the materials producing nuclear secondaries, including nuclear recoils and heavy-ion tertiaries. The secondary pions and the the tertiary particles are capable of producing single-event upsets and other damage in integrated circuits and damage in biological systems. Negative pions stopping in materials are particularly effective because of their unique ability to produce short-range heavy particles from pion stars. With the Los Alamos National Laboratory's version of the intranuclear cascade evaporation code, VEGAS, we have calculated the number of pions produced per energy interval per incident proton from 800 MeV protons on aluminum-27 and silicon-28 along with corresponding results for neutrons, protons, and heavier ions. (orig.).

  2. CoSi2 growth on Si(001) by reactive deposition epitaxy: Effects of high-flux, low-energy ion irradiation

    International Nuclear Information System (INIS)

    Lim, C. W.; Greene, J. E.; Petrov, I.

    2006-01-01

    CoSi 2 layers, CoSi 2 (parallel sign)(001) Si and [100] CoSi 2 (parallel sign)[100] Si , contain fourfold symmetric (111) twinned domains oriented such that (221) CoSi 2 (parallel sign)(001) Si and CoSi 2 (parallel sign)[110] Si . We demonstrate that high-flux low-energy (E Ar + =9.6 eV) Ar + ion irradiation during deposition dramatically increases the area fraction f u of untwinned regions from 0.17 in films grown under standard magnetically balanced conditions in which the ratio J Ar + /J Co of the incident Ar + to Co fluxes is 1.4 to 0.72 with J Ar + /J Co =13.3. TEM analyses show that the early stages of RDE CoSi 2 (001) film growth proceed via the Volmer-Weber mode with independent nucleation of both untwinned and twinned islands. Increasing J Ar + /J Co results in larger values of both the number density and area of untwinned with respect to twinned islands. The intense Ar + ion bombardment creates additional low-energy adsorption sites that favor the nucleation of untwinned islands while collisionally enhancing Co surface mobilities which, in turn, increases the probability of itinerant Co adatoms reaching these sites

  3. Development of Si-based detectors for intermediate energy heavy-ion physics at a storage-ring accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Whitlow, H.J.; Jaworowski, J.; Leandersson, M.; El Bouanani, M. [Lund Institute of Technology, Solvegatan Lund, (Sweden). Department of Nuclear Physics; Jakobsson, B. [Lund Univ. (Sweden). Dept. of Cosmic and Subatomic Physics; Romanski, J.; Westerberg, L.; Van Veldhuizen, E.J. [Uppsala Univ. (Sweden); The Chicsi Collaboration

    1996-12-31

    Ultrahigh vacuum (UHV) compatible Si detectors are being developed by the CELSIUS Heavy lon Collaboration (CHIC) for measuring the energy and identity of Intermediate Mass Fragments (IMF) with Z {approx} 3 - 12 and energies of 0.7 - I 0 A MeV. Here we give an overview of the development of Si {delta}E-E detector telescopes and investigations on IMF identification based on the pulse shape from Si-detectors where the particles impinge on the rear-face of the detector. 9 refs., 4 figs.

  4. Development of Si-based detectors for intermediate energy heavy-ion physics at a storage-ring accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Whitlow, H J; Jaworowski, J; Leandersson, M; El Bouanani, M [Lund Institute of Technology, Solvegatan Lund, (Sweden). Department of Nuclear Physics; Jakobsson, B [Lund Univ. (Sweden). Dept. of Cosmic and Subatomic Physics; Romanski, J; Westerberg, L; Van Veldhuizen, E J [Uppsala Univ. (Sweden); The Chicsi Collaboration

    1997-12-31

    Ultrahigh vacuum (UHV) compatible Si detectors are being developed by the CELSIUS Heavy lon Collaboration (CHIC) for measuring the energy and identity of Intermediate Mass Fragments (IMF) with Z {approx} 3 - 12 and energies of 0.7 - I 0 A MeV. Here we give an overview of the development of Si {delta}E-E detector telescopes and investigations on IMF identification based on the pulse shape from Si-detectors where the particles impinge on the rear-face of the detector. 9 refs., 4 figs.

  5. Ion implantation effects in single crystal Si investigated by Raman spectroscopy

    International Nuclear Information System (INIS)

    Harriman, T.A.; Lucca, D.A.; Lee, J.-K.; Klopfstein, M.J.; Herrmann, K.; Nastasi, M.

    2009-01-01

    A study of the effects of Ar ion implantation on the structural transformation of single crystal Si investigated by confocal Raman spectroscopy is presented. Implantation was performed at 77 K using 150 keV Ar ++ with fluences ranging from 2 x 10 13 to 1 x 10 15 ions/cm 2 . The Raman spectra showed a progression from crystalline to highly disordered structure with increasing fluence. The 520 cm -1 c-Si peak was seen to decrease in intensity, broaden and exhibit spectral shifts indicating an increase in lattice disorder and changes in the residual stress state. In addition, an amorphous Si band first appeared as a shoulder on the 520 cm -1 peak and then shifted to lower wavenumbers as a single broadband peak with a spectral center of 465 cm -1 . Additionally, the emergence of the a-Si TA phonon band and the decrease of the c-Si 2TA and 2TO phonon bands also indicated the same structural transition from crystalline to highly disordered. The Raman results were compared to those obtained by channeling RBS.

  6. Silicide formation by Ar/sup +/ ion bombardment of Pd/Si

    Energy Technology Data Exchange (ETDEWEB)

    Lee, R Y; Whang, C N; Kim, H K; Smith, R J

    1988-08-01

    Palladium films, 45 nm thick, evaporated on to Si(111) were irradiated to various doses with 78 keV Ar/sup +/ ions to promote silicide formation. Rutherford backscattering spectroscopy (RBS) shows that intermixing has occurred across the Pd/Si interface at room temperature. The mixing behaviour is increased with dose which coincides well with the theoretical model of cascade mixing. The absence of deep RBS tails for palladium and the small area of this for silicon spectra indicate that short-range mixing occurs. From the calculated damage profiles computed with TRIM code, the dominant diffusion species is found to be silicon atoms in the Pd/Si system. It is also found that the initial compound formed by Ar/sup +/ irradiation is Pd/sub 2/Si which increases with dose. At a dose of 1 x 10/sup 16/ Ar/sup +/ cm/sup -2/, a 48 nm thickness of Pd/sub 2/Si was formed by ion-beam mixing at room temperature.

  7. Lattice damage assessment and optical waveguide properties in LaAlO3 single crystal irradiated with swift Si ions

    Science.gov (United States)

    Liu, Y.; Crespillo, M. L.; Huang, Q.; Wang, T. J.; Liu, P.; Wang, X. L.

    2017-02-01

    As one of the representative ABO3 perovskite-structured oxides, lanthanum aluminate (LaAlO3) crystal has emerged as one of the most valuable functional-materials, and has attracted plenty of fundamental research and promising applications in recent years. Electronic, magnetic, optical and other properties of LaAlO3 strongly depend on its crystal structure, which could be strongly modified owing to the nuclear or electronic energy loss deposited in an ion irradiation environment and, therefore, significantly affecting the performance of LaAlO3-based devices. In this work, utilizing swift (tens of MeV) Si-ion irradiation, the damage behavior of LaAlO3 crystal induced by nuclear or electronic energy loss has been studied in detail utilizing complementary characterization techniques. Differing from other perovskite-structured crystals in which the electronic energy loss could lead to the formation of an amorphous region based on the thermal spike mechanism, in this case, intense electronic energy loss in LaAlO3 will not induce any obvious structural damage. The effects of ion irradiation on the mechanical properties, including hardness increase and elastic modulus decrease, have been confirmed. On the other hand, considering the potential applications of LaAlO3 in the field of integrated optoelectronics, the optical-waveguide properties of the irradiation region have been studied. The significant correspondence (symmetrical inversion) between the iWKB-reconstructed refractive-index profile and SRIM-simulated dpa profile further proves the effects (irradiation-damage production and refractive-index decrease) of nuclear energy loss during the swift-ion penetration process in LaAlO3 crystal. In the case of the rather-thick damage layer produced by swift-ion irradiation, obtaining a damage profile will be constrained owing to the analysis-depth limitation of the characterization techniques (RBS/channeling), and our analysis process (optical guided-mode measurement and

  8. Lattice damage assessment and optical waveguide properties in LaAlO3 single crystal irradiated with swift Si ions

    International Nuclear Information System (INIS)

    Liu, Y; Wang, T J; Liu, P; Wang, X L; Crespillo, M L; Huang, Q

    2017-01-01

    As one of the representative ABO 3 perovskite-structured oxides, lanthanum aluminate (LaAlO 3 ) crystal has emerged as one of the most valuable functional-materials, and has attracted plenty of fundamental research and promising applications in recent years. Electronic, magnetic, optical and other properties of LaAlO 3 strongly depend on its crystal structure, which could be strongly modified owing to the nuclear or electronic energy loss deposited in an ion irradiation environment and, therefore, significantly affecting the performance of LaAlO 3 -based devices. In this work, utilizing swift (tens of MeV) Si-ion irradiation, the damage behavior of LaAlO 3 crystal induced by nuclear or electronic energy loss has been studied in detail utilizing complementary characterization techniques. Differing from other perovskite-structured crystals in which the electronic energy loss could lead to the formation of an amorphous region based on the thermal spike mechanism, in this case, intense electronic energy loss in LaAlO 3 will not induce any obvious structural damage. The effects of ion irradiation on the mechanical properties, including hardness increase and elastic modulus decrease, have been confirmed. On the other hand, considering the potential applications of LaAlO 3 in the field of integrated optoelectronics, the optical-waveguide properties of the irradiation region have been studied. The significant correspondence (symmetrical inversion) between the iWKB-reconstructed refractive-index profile and SRIM-simulated dpa profile further proves the effects (irradiation-damage production and refractive-index decrease) of nuclear energy loss during the swift-ion penetration process in LaAlO 3 crystal. In the case of the rather-thick damage layer produced by swift-ion irradiation, obtaining a damage profile will be constrained owing to the analysis-depth limitation of the characterization techniques (RBS/channeling), and our analysis process (optical guided

  9. Improvement in beam quality of the JAEA AVF cyclotron for focusing heavy-ion beams with energies of hundreds of MeV

    International Nuclear Information System (INIS)

    Kurashima, Satoshi; Miyawaki, Nobumasa; Okumura, Susumu; Oikawa, Masakazu; Yoshida, Ken-ichi; Kamiya, Tomihiro; Fukuda, Mitsuhiro; Satoh, Takahiro; Nara, Takayuki; Agematsu, Takashi; Ishibori, Ikuo; Yokota, Watalu; Nakamura, Yoshiteru

    2007-01-01

    In order to achieve a heavy-ion microbeam with an energy of hundreds of MeV applied to the research fields of biotechnology and materials science, the JAEA AVF cyclotron (K = 110) has been upgraded to provide a high quality beam with a smaller energy spread and a higher current stability. A flat-top (FT) acceleration system of the cyclotron, designed to produce ion beams with an energy spread of ΔE/E ≤ 0.02%, has been developed to reduce chromatic aberrations in the lenses of the focusing microbeam system. The FT acceleration system provides uniform energy gain of the beam by superimposing a fifth-harmonic voltage on the fundamental one. In addition, stabilization of the acceleration rf voltage and the phase were achieved to accelerate the high quality beam and to provide it stably to the microbeam system connected to a cyclotron beam line. In the latest experiment, we have succeeded to accelerate 260 MeV 20 Ne 7+ with an energy spread of 0.05% in FWHM using the FT acceleration system

  10. Study of elastic pion scattering from /sup 9/Be, /sup 28/Si, /sup 58/Ni, and /sup 208/Pb at 162 MeV. [Total and differential cross sections, scattering yields, scattering amplitudes

    Energy Technology Data Exchange (ETDEWEB)

    Devereux, M.J.

    1979-05-01

    Elastic pion scattering from /sup 9/Be, /sup 28/Si, /sup 58/Ni, and /sup 208/Pb at 162 MeV is analyzed and compared with an optical model theory which incorporates a pion--nucleon range. Excellent fits to the data are obtained in all but one case. The fitted values of the pion--nucleon range, as well as other fitted values are listed. 108 references.

  11. P and Si functionalized MXenes for metal-ion battery applications

    KAUST Repository

    Zhu, Jiajie

    2017-04-10

    MXenes are a family of two-dimensional materials, composed of early transition metal carbides, nitrides, and carbonitrides, with great potential in energy storage systems, in particular in electrodes for Li, Na, K-ion batteries. However, so far the capacities are not competitive. In this context, we investigate P and Si functionalized MXenes for metal-ion battery applications, using first-principles calculations, since P and Si provide reaction products with high ion content. Replacement of the F and OH ligands of Ti2C and V2C with P and Si is demonstrated to be feasible (energy barriers of less than 0.128 eV) and the ion diffusion barriers turn out to be less than 0.32 eV. Importantly, the Li, Na, and K capacities are predicted to be 1767 mAh g−1, 711 mAh g−1, and 711 mAh g−1, respectively, thus being much higher than in the case of F and OH functionalization.

  12. One dimensional Si/Sn - based nanowires and nanotubes for lithium-ion energy storage materials

    KAUST Repository

    Choi, Nam-Soon

    2011-01-01

    There has been tremendous interest in using nanomaterials for advanced Li-ion battery electrodes, particularly to increase the energy density by using high specific capacity materials. Recently, it was demonstrated that one dimensional (1D) Si/Sn nanowires (NWs) and nanotubes (NTs) have great potential to achieve high energy density as well as long cycle life for the next generation of advanced energy storage applications. In this feature article, we review recent progress on Si-based NWs and NTs as high capacity anode materials. Fundamental understanding and future challenges on one dimensional nanostructured anode are also discussed. © 2010 The Royal Society of Chemistry.

  13. Bond length contraction in Au nanocrystals formed by ion implantation into thin SiO2

    International Nuclear Information System (INIS)

    Kluth, P.; Johannessen, B.; Giraud, V.; Cheung, A.; Glover, C.J.; Azevedo, G. de M; Foran, G.J.; Ridgway, M.C.

    2004-01-01

    Au nanocrystals (NCs) fabricated by ion implantation into thin SiO 2 and annealing were investigated by means of extended x-ray absorption fine structure (EXAFS) spectroscopy and transmission electron microscopy. A bond length contraction was observed and can be explained by surface tension effects in a simple liquid-drop model. Such results are consistent with previous reports on nonembedded NCs implying a negligible influence of the SiO 2 matrix. Cumulant analysis of the EXAFS data suggests surface reconstruction or relaxation involving a further shortened bond length. A deviation from the octahedral closed shell structure is apparent for NCs of size 25 A

  14. An in-beam PET system for monitoring ion-beam therapy: test on phantoms using clinical 62 MeV protons

    Science.gov (United States)

    Camarlinghi, N.; Sportelli, G.; Battistoni, G.; Belcari, N.; Cecchetti, M.; Cirrone, G. A. P.; Cuttone, G.; Ferretti, S.; Kraan, A.; Retico, A.; Romano, F.; Sala, P.; Straub, K.; Tramontana, A.; Del Guerra, A.; Rosso, V.

    2014-04-01

    Ion therapy allows the delivery of highly conformal dose taking advantage of the sharp depth-dose distribution at the Bragg-peak. However, patient positioning errors and anatomical uncertainties can cause dose distortions. To exploit the full potential of ion therapy, an accurate monitoring system of the ion range is needed. Among the proposed methods to monitor the ion range, Positron Emission Tomography (PET) has proven to be the most mature technique, allowing to reconstruct the β+ activity generated in the patient by the nuclear interaction of the ions, that can be acquired during or after the treatment. Taking advantages of the spatial correlation between positron emitters created along the ions path and the dose distribution, it is possible to reconstruct the ion range. Due to the high single rates generated during the beam extraction, the acquisition of the β+ activity is typically performed after the irradiation (cyclotron) or in between the synchrotron spills. Indeed the single photon rate can be one or more orders of magnitude higher than normal for cyclotron. Therefore, acquiring the activity during the beam irradiation requires a detector with a very short dead time. In this work, the DoPE