Si exfoliation by MeV proton implantation

International Nuclear Information System (INIS)

Braley, Carole; Mazen, Frédéric; Tauzin, Aurélie; Rieutord, François; Deguet, Chrystel; Ntsoenzok, Esidor

2012-01-01

Proton implantation in silicon and subsequent annealing are widely used in the Smart Cut™ technology to transfer thin layers from a substrate to another. The low implantation energy range involved in this process is usually from a few ten to a few hundred of keV, which enables the separation of up to 2 μm thick layers. New applications in the fields of 3D integration and photovoltaic wafer manufacturing raise the demand for extending this technology to higher energy in order to separate thicker layer from a substrate. In this work, we propose to investigate the effect of proton implantation in single crystalline silicon in the 1–3 MeV range which corresponds to a 15–100 μm range for the hydrogen maximum concentration depth. We show that despites a considerably lower hydrogen concentration at R p , the layer separation is obtained with fluence close to the minimum fluence required for low energy implantation. It appears that the fracture propagation in Si and the resulting surface morphology is affected by the substrate orientation. Defects evolution is investigated with Fourier Transform Infrared Spectroscopy. The two orientations reveal similar type of defects but their evolution under annealing appears to be different.

Highly Stripped Ion Sources for MeV Ion Implantation

Energy Technology Data Exchange (ETDEWEB)

Hershcovitch, Ady

2009-06-30

Original technical objectives of CRADA number PVI C-03-09 between BNL and Poole Ventura, Inc. (PVI) were to develop an intense, high charge state, ion source for MeV ion implanters. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MV LINAC is used for acceleration of a few rnA. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform (de acceleration) to generate high-energy ion beams for implantation. This de acceleration of ions will be far more efficient (in energy utilization). The resultant implanter will be smaller in size. It will generate higher quality ion beams (with lower emittance) for fabrication of superior semiconductor products. In addition to energy and cost savings, the implanter will operate at a lower level of health risks associated with ion implantation. An additional aim of the project was to producing a product that can lead to long­ term job creation in Russia and/or in the US. R&D was conducted in two Russian Centers (one in Tomsk and Seversk, the other in Moscow) under the guidance ofPVI personnel and the BNL PI. Multiple approaches were pursued, developed, and tested at various locations with the best candidate for commercialization delivered and tested at on an implanter at the PVI client Axcelis. Technical developments were exciting: record output currents of high charge state phosphorus and antimony were achieved; a Calutron-Bemas ion source with a 70% output of boron ion current (compared to 25% in present state-of-the-art). Record steady state output currents of higher charge state phosphorous and antimony and P ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb {sup 4 +}, Sb{sup 5+}, and Sb{sup 6+} respectively. Ultimate commercialization goals did not succeed (even though a number of the products like high

Si-nanoparticle synthesis using ion implantation and MeV ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Chulapakorn, T.; Wolff, M.; Primetzhofer, D.; Possnert, G. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J. [Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden); Hallen, A. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

2015-12-15

A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO{sub 2} matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO{sub 2} by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV {sup 127}I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Patterned microstructures formed with MeV Au implantation in Si(1 0 0)

International Nuclear Information System (INIS)

Rout, Bibhudutta; Greco, Richard R.; Zachry, Daniel P.; Dymnikov, Alexander D.; Glass, Gary A.

2006-01-01

Energetic (MeV) Au implantation in Si(1 0 0) (n-type) through masked micropatterns has been used to create layers resistant to KOH wet etching. Microscale patterns were produced in PMMA and SU(8) resist coatings on the silicon substrates using P-beam writing and developed. The silicon substrates were subsequently exposed using 1.5 MeV Au 3+ ions with fluences as high as 1 x 10 16 ions/cm 2 and additional patterns were exposed using copper scanning electron microscope calibration grids as masks on the silicon substrates. When wet etched with KOH microstructures were created in the silicon due to the resistance to KOH etching cause by the Au implantation. The process of combining the fabrication of masked patterns with P-beam writing with broad beam Au implantation through the masks can be a promising, cost-effective process for nanostructure engineering with Si

Mixing of phosphorus and antimony ions in silicon by recoil implantation

International Nuclear Information System (INIS)

Kwok, H.L.; Lam, Y.W.; Wong, S.P.; Poon, M.C.

1986-01-01

The effects of mixing phosphorus and antimony ions in silicon by recoil implantation were examined. The electrical properties after ion mixing were investigated, and the results were compared with those obtained using other techniques. Different degrees of activation were also studied, by investigating the annealing behaviour. (U.K.)

The eight modes observation in LiNbO3 induced by 3.0 MeV He+ implantation

International Nuclear Information System (INIS)

Wang Keming; Shi Borong; Zhou Zhuang; Wang Wei; Ding Peijun; Wang Zhonglie.

1994-01-01

The y-cut LiNbO 3 was implanted by 3.0 MeV He + to a dose of 2 x10 16 ions/cm 2 at liquid nitrogen temperature. The eight black and bright modes from He implanted LiNbO 3 waveguide were observed before and after rapid annealing. The refractive index profile is obtained by means of a non-stationary mode index calculation. The comparison of refractive index profile with damage profile is given. The result shows that the peak position of the refractive index profile is found to be in good agreement with the peak position of damage profile induced by 3.0 MeV He + implanted in LiNbO 3 based on transport of ions in matter (TRIM'92).(author)

Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn0.85Mg0.15O thin films

International Nuclear Information System (INIS)

Saha, S.; Nagar, S.; Chakrabarti, S.

2014-01-01

ZnMgO thin films deposited on 〈100〉 Si substrates by RF sputtering were annealed at 800, 900, and 1000 °C after phosphorus plasma immersion ion implantation. X-ray diffraction spectra confirmed the presence of 〈101 ¯ 0〉 and 〈101 ¯ 3〉 peaks for all the samples. However, in case of the annealed samples, the 〈0002〉 peak was also observed. Scanning electron microscopy images revealed the variation in surface morphology caused by phosphorus implantation. Implanted and non-implanted samples were compared to examine the effects of phosphorus implantation on the optical properties of ZnMgO. Optical characteristics were investigated by low-temperature (15 K) photoluminescence experiments. Inelastic exciton–exciton scattering and localized, and delocalized excitonic peaks appeared at 3.377, 3.42, and 3.45 eV, respectively, revealing the excitonic effect resulting from phosphorus implantation. This result is important because inelastic exciton–exciton scattering leads to nonlinear emission, which can improve the performance of many optoelectronic devices

Double-step annealing and ambient effects on phosphorus implanted emitters in silicon

International Nuclear Information System (INIS)

Koji, T.; Tseng, W.F.; Mayer, J.W.; Suganuma, T.

1979-01-01

Emitters of npn silicon bipolar transistors have been made by a phosphorus implantation at 50 keV P + to a dose of 1 x 10 16 cm -2 . This was followed by high temperature processes to reduce lattice disorder, to drive-in the phosphorus atoms, and to form oxide layers. The first process step was carried out by using single- and double-step anneals in various ambients (dry N 2 , dry 0 2 and steam) while the drive-in and oxidation steps were common for all structures. Electrical measurements on emitter/base leakage current, low frequency (popcorn) noise and current gain showed that the annealing ambient had a major influence. The transistors with implanted emitters annealed in a dry N 2 ambient are comparable to commercial ones with thermally-diffused emitters. Transmission electron microscopy observations on samples annealed in steam ambients revealed dislocations extending into the sidewall of the emitter/base junction. This sidewell penetration of dislocations is the main origin of the degradation of the emitter/base junction characteristics. (author)

The influence of excess vacancy generation on the diffusion of ion implanted phosphorus into silicon

International Nuclear Information System (INIS)

Bakowski, A.

1985-01-01

The diffusion of ion implanted phosphorus in silicon has been studied. It was found that the diffusion coefficient is not only dependent on the phosphorus surface concentration (the concentration effect) but also on the conditions at the silicon surface (the surface effect). The phosphorus diffusion coefficient is considerably lower when the silicon surface during annealing is covered with a CVD oxide layer. It is suggested that excess vacancies generated at the surface are reponsible for both the concentration and surface effects. Enhanced phosphorus diffusion is attributed to the disturbance of thermodynamic equilibrium in the crystal through phosphorus-vacancy part formation by vacancies introduced into silicon at the surface. On the basis of the data presented, it can be concluded that two mechanisms for excess vacancy generation are involved. Assuming that phosphorus diffuses via E-centers, calculations of the concentration profiles and the diffusion coefficient were performed for different concentrations and surface conditions. (orig.)

Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons

Science.gov (United States)

Arutyunov, N.; Emtsev, V.; Krause-Rehberg, R.; Elsayed, M.; Kessler, C.; Kozlovski, V.; Oganesyan, G.

2015-06-01

Defects in phosphorus-doped silicon samples of floating-zone material, n-FZ-Si(P), produced under irradiation with 15 MeV protons at room temperature are studied by positron annihilation lifetime spectroscopy over the temperature range of ∼ 30 K - 300 K and by low- temperature Hall effect measurements. After annealing of E-centersand divacancies, we detected for the first time high concentrations of positron traps which had not been observed earlier. These defects are isochronally annealed over the temperature interval of ∼ 320 °C - 700 °C they manifest themselves as electrically neutral deep donor centersin the material of n-type. A long-lived component of the positron lifetime, τ2(I2 enthalpy and entropy of annealing of these centersare Ea ∼ 1.05(0.21) eV and ΔSm ≈ 3.1(0.6)kB, respectively. It is argued that the microstructure of the defect consists of two vacancies, VV, and one atom of phosphorus, P. The split configuration of the VPV complex is shortly discussed.

Monte Carlo simulation of channeled and random profiles of heavy ions implanted in silicon at high energy (1.2 MeV)

International Nuclear Information System (INIS)

Mazzone, A.M.

1987-01-01

In order to study channeling effects and implants of heavy ions with energy of few MeV in silicon, ion distributions are calculated with a Monte Carlo method for axial [(001) axis], planar, and nominally random directions for As + and P + ions implanted into silicon with energies in the range 100 keV to 2 MeV. The calculation indicates an appreciable channeling at the higher energy only for the (001) axis and the (110) planes. For heavy ions with energy in the MeV range the subsidence of channeling into major channels and the disappearance of minor channels are shown

Focussed MeV ion beam implanted waveguides

Energy Technology Data Exchange (ETDEWEB)

Von Bibra, M.L.; Roberts, A.; Nugent, K.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1996-12-31

Single mode buried optical waveguides have been fabricated in fused silica by MeV proton implantation using a focussed hydrogen ion beam. The technique has the potential to direct write waveguide devices and produce multi-layered structures, without the need for intermediate steps such as mask fabrication or layered depositions. A micron resolution Confocal Raman Spectrometer has been used to map the distribution of atomic vacancies that forms the waveguiding region. The results are compared with theoretical calculations. Losses of 3 dB cm{sup -1} have been measured in unannealed samples, which decreases to less than 0.5 dB cm{sup -1} after annealing at 500 degrees Celsius. We describe methods for determining the refractive index distribution of single mode buried waveguides from their output intensity distributions via an inversion of the scalar wave equation. (authors). 5 figs.

Focussed MeV ion beam implanted waveguides

Energy Technology Data Exchange (ETDEWEB)

Von Bibra, M L; Roberts, A; Nugent, K; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1997-12-31

Single mode buried optical waveguides have been fabricated in fused silica by MeV proton implantation using a focussed hydrogen ion beam. The technique has the potential to direct write waveguide devices and produce multi-layered structures, without the need for intermediate steps such as mask fabrication or layered depositions. A micron resolution Confocal Raman Spectrometer has been used to map the distribution of atomic vacancies that forms the waveguiding region. The results are compared with theoretical calculations. Losses of 3 dB cm{sup -1} have been measured in unannealed samples, which decreases to less than 0.5 dB cm{sup -1} after annealing at 500 degrees Celsius. We describe methods for determining the refractive index distribution of single mode buried waveguides from their output intensity distributions via an inversion of the scalar wave equation. (authors). 5 figs.

High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen

International Nuclear Information System (INIS)

Frey, L.; Bogen, S.; Gong, L.; Jung, W.; Ryssel, H.; Gyulai, J.

1992-01-01

A new high energy ion implanter for research and development in semiconductor technology was put into operation at the Fraunhofer Institute in Erlangen. The system is used for generation of ion beams in the energy range from 100 keV to more than 6 MeV with currents up to 100 μA. A large variety of ion species can be implanted into silicon wafers with diameters up to 200 mm (with cassette-to-cassette loading up to 150 mm). The performance characteristics of the system are described with special emphasis on the end stations. In a first series of experiments, the range distributions of boron, phosphorus and arsenic in silicon have been measured for energies from 0.2 MeV to 10 MeV in order to get a data set for future applications. The profiles are compared to simulated data. First experimental results on lateral distribution of the dopant species are presented. (orig.)

Determination of phosphorus and calcium in biological samples by activation with 14 MeV neutrons

International Nuclear Information System (INIS)

Berretta, Jose Roberto

1995-01-01

Analytical methods for phosphorus and calcium in biological samples by means of activation with 14 MeV neutrons, using the Van de Graaff accelerator from the Instituto de Pesquisas Energeticas e Nucleares, SP, Brazil are developed. For phosphorus analysis, powder samples were pressed into pellets, weighed and transferred to polyethylene plastic envelopes. The pellets with cadmium shielding were irradiated under a fast neutron flux for 5 to 10 minutes, and further counted in a HPGe detector for 5 minutes. Calcium analysis was performed by cyclic irradiation. Samples were irradiated for 10 minutes. After a decay time of 2 minutes, gamma counting was performed for 10 minutes. After a decay time of 2 minutes, a new irradiation ws made. The irradiation cycle was repeated 5 times and the counting spectrum obtained in each cycle was accumulated in the multi channel analyser. The variation of the neutron flux was followed by using a BF 3 detector calibrated with and aluminium monitor. By means of the gamma spectrum and the neutron counting of the BF 3 detector it was possible to estimate phosphorus and calcium concentrations in the sample analyzed. The methods were checked in the reference samples from the International Atomic Energy Agency and in commercial samples of powder milk, fertilizer and animal bone. Phosphorus contents in bone (A3/74) and milk (A-11) reference materials were (15.6 +- 1.8%) and (0.9 +- 0.1)%, respectively. These values are in good agreement to the certified values (15.5 +- 0.5)% and (0.910 +- 0.102)%, respectively. Calcium analysis carried out in bone (A3/74) presented a value of (31.8+-4.1)% and the certified value was of (31.3 +- 0.3)%. Detection limits for phosphorus and calcium were determined in different analyzed samples. The agreement of the results obtained with the certified values confirmed the suitability of the methods for phosphorus and calcium analysis. The methods are fast and laborious chemical procedures are not required. (author)

Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn{sub 0.85}Mg{sub 0.15}O thin films

Energy Technology Data Exchange (ETDEWEB)

Saha, S.; Nagar, S.; Chakrabarti, S., E-mail: subho@ee.iitb.ac.in [Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)

2014-08-11

ZnMgO thin films deposited on 〈100〉 Si substrates by RF sputtering were annealed at 800, 900, and 1000 °C after phosphorus plasma immersion ion implantation. X-ray diffraction spectra confirmed the presence of 〈101{sup ¯}0〉 and 〈101{sup ¯}3〉 peaks for all the samples. However, in case of the annealed samples, the 〈0002〉 peak was also observed. Scanning electron microscopy images revealed the variation in surface morphology caused by phosphorus implantation. Implanted and non-implanted samples were compared to examine the effects of phosphorus implantation on the optical properties of ZnMgO. Optical characteristics were investigated by low-temperature (15 K) photoluminescence experiments. Inelastic exciton–exciton scattering and localized, and delocalized excitonic peaks appeared at 3.377, 3.42, and 3.45 eV, respectively, revealing the excitonic effect resulting from phosphorus implantation. This result is important because inelastic exciton–exciton scattering leads to nonlinear emission, which can improve the performance of many optoelectronic devices.

Electrical properties of InP:Fe single crystals implanted by phosphorus ions

International Nuclear Information System (INIS)

Radautsan, S.I.; Tiginyanu, I.M.; Pyshnaya, N.B.

1988-01-01

Investigations of phosphorus ion implantation in InP:Fe monocrystals and of the post-implantation annealing process upon the electrical properties of InP:Fe were carried out. The electrical parameters of the samples have been determined by Hall effect measurements. The curves of electron surface concentration n s and mobility μ s as functions of annealing temperature in the range of 200 to 600 0 C are shown and discussed. In order to estimate the depth of donor levels in annealed samples the temperature dependence of the surface Hall coefficient has been studied in the range 100 to 400 K. The thermal electron activation energy has been determined to be 0.09 eV

Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

International Nuclear Information System (INIS)

Schrof, Julian; Müller, Ralph; Benick, Jan; Hermle, Martin; Reedy, Robert C.

2015-01-01

Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr 3 furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr 3 diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr 3

Deep ion implantation for bipolar silicon devices; investigations into the use of the third dimension

International Nuclear Information System (INIS)

Mouthaan, A.J.

1986-01-01

This thesis covers various aspects of the use of deep ion implantations in digital bipolar circuits. It starts with the implications of the use of deep ion implantations for numerical process, device and circuit simulation. It shows the use of 1MeV boron and phosphorus implantations in the realization of a fully vertical IIL, here named Buried Injector Logic, which can also be used as static and dynamic memory device in several different configurations. The author presents a combined MOS-bipolar device, called the Charge Injection Device as a dynamic memory cell. Finally, deep ion implantations are used to realize a stack of photovoltaic cells that produces a multiple of the open circuit voltage of one photodiode. (Auth.)

Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs

International Nuclear Information System (INIS)

Usman, Muhammad; Hallen, Anders; Ghandi, Reza; Domeij, Martin

2010-01-01

Degradation of 4H-SiC power bipolar junction transistors (BJTs) under the influence of a high-energy helium ion beam was studied. Epitaxially grown npn BJTs were implanted with 3.0 MeV helium in the fluence range of 10 10 -10 11 cm -2 . The devices were characterized by their current-voltage (I-V) behaviour before and after the implantation, and the results showed a clear degradation of the output characteristics of the devices. Annealing these implanted devices increased the interface traps between passivation oxide and the semiconductor, resulting in an increase of base current in the low-voltage operation range.

Formation of slab waveguides in eulytine type BGO and CaF{sub 2} crystals by implantation of MeV nitrogen ions

Energy Technology Data Exchange (ETDEWEB)

Banyasz, I., E-mail: bakonyjako@yahoo.es [Department of Crystal Physics, Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Berneschi, S. [Centro Studi e Ricerche ' Enrico Fermi' , Piazza del Viminale 2, 00184 Roma (Italy); MDF-Lab, ' ' Nello Carrara' ' Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Khanh, N.Q.; Lohner, T. [Research Institute for Technical Physics and Materials Science of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Lengyel, K. [Department of Crystal Physics, Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Fried, M. [Research Institute for Technical Physics and Materials Science of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Peter, A. [Department of Crystal Physics, Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Petrik, P.; Zolnai, Z. [Research Institute for Technical Physics and Materials Science of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Watterich, A. [Department of Crystal Physics, Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Nunzi-Conti, G.; Pelli, S.; Righini, G.C. [MDF-Lab, ' ' Nello Carrara' ' Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy)

2012-09-01

Ion implantation, compared with other waveguide fabrication methods, has some unique advantages. It has proved to be a universal technique for producing waveguides in most optical materials. The authors of the present article reported fabrication of channel and slab waveguides in an Erbium-doped tungsten tellurite glass by implantation of MeV energy N{sup +} ions. The present article reports successful adaptation of the same technique to the fabrication of slab waveguides in eulytine type bismuth germanate (BGO) and CaF{sub 2} crystals. This is the first report on successful waveguide fabrication in these materials using 3.5 MeV N{sup +} ions at implanted fluences between 5 Multiplication-Sign 10{sup 15} and 4 Multiplication-Sign 10{sup 16} ions/cm{sup 2}. Spectroscopic ellipsometric measurements revealed the existence of guiding structures in both materials. M-line spectroscopic measurements indicated guiding effect in the as-implanted BGO up to 1550 nm and up to 980 nm in the as-implanted CaF{sub 2}. Ion implantation induced the appearance of three peaks in the UV/Vis absorption spectrum of CaF{sub 2}, that can be attributed to colour centres.

Systemic Assessment of Calcium and Phosphorus Level after Implantation of Porous Iron in Rats

Science.gov (United States)

Siallagan, S. F.; Amelia, F.; Utami, N. D.; Ulum, M. F.; Boediono, A.; Estuningsih, S.; Hermawan, H.; Noviana, D.

2017-07-01

One of important aspects in bone healing process is physiological level of calcium (Ca), and phosphorus (P) that can be altered by implantation of biodegradable porous iron. Therefore, this study aims to investigate the concentration of Ca, P and Ca/P ratio in the peripheral blood during the implantation period up to 4 months. Forty adult male Sprague Dawley rats were used and divided into 3 groups receiving different pore size of iron implants (pore size 450, 580, 800μm) and one group of sham. The implants (5x2x0.5mm) were inserted into flat bone defects at latero-medial of femoral bone. Blood sample was taken from ventral tail artery before and after 4 month of implantation. Calcium and P concentrations in the blood were determined by BA-88A Semi-Auto Chemistry Analyzer. Results showed that concentration of Ca and P are slightly higher after implantation than before implantation, except for the 450μm group. The Ca/P ratio before and after implantation was increased in the sham group, and decreased in the 450 and 800μm groups. Concentration of Ca, P and Ca/P ratio insignificantly change between before and 4 months after surgery in some groups.

Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs

Energy Technology Data Exchange (ETDEWEB)

Usman, Muhammad; Hallen, Anders; Ghandi, Reza; Domeij, Martin, E-mail: musman@kth.s [Microelectronics and Applied Physics, School of Communication and Information Technology, Royal Institute of Technology (KTH), Electrum 229, 16440 Kista (Sweden)

2010-11-01

Degradation of 4H-SiC power bipolar junction transistors (BJTs) under the influence of a high-energy helium ion beam was studied. Epitaxially grown npn BJTs were implanted with 3.0 MeV helium in the fluence range of 10{sup 10}-10{sup 11} cm{sup -2}. The devices were characterized by their current-voltage (I-V) behaviour before and after the implantation, and the results showed a clear degradation of the output characteristics of the devices. Annealing these implanted devices increased the interface traps between passivation oxide and the semiconductor, resulting in an increase of base current in the low-voltage operation range.

Effect of MeV energy He and N pre-implantation on the formation of porous silicon

International Nuclear Information System (INIS)

Manuaba, A.; Paszti, F.; Ortega, C.; Grosman, A.; Horvath, Z.E.; Szilagyi, E.; Khanh, N.Q.; Vickridge, I.

2001-01-01

The effects of MeV energy He and N pre-implantation of Si substrate on the structure of porous silicon formed by anodic etching were studied by measuring the depth profiles of 15 N decorating the pores walls. Radiation damage was recovered by annealing after the implantation. It was found that the He implant accelerates the etching process, probably due to the bubbles or the remaining lattice damage. At a dose of 8x10 16 ions/cm 2 the He containing layer was formed with a significantly enhanced porosity due to the contribution of the large-sized bubbles. At the highest dose of 32.5x10 16 ions/cm 2 flaking took place during the anodic etching. In contrast to He, N stopped the anodic etching at a depth of critical N concentration of ∼0.9 at.%. For the lowest implantation dose, where the peak concentration was below this limit, the pores propagate through the implanted layer with an enhanced speed

MeV ion irradiation effects on the luminescence properties of Si-implanted SiO{sub 2}-thin films

Energy Technology Data Exchange (ETDEWEB)

Chulapakorn, T.; Primetzhofer, D. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J.; Hallen, A. [Royal Institute of Technology (KTH), School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

2016-12-15

The effects of MeV heavy ion irradiation at varying fluence and flux on excess Si, introduced in SiO{sub 2} by keV ion implantation, are investigated by photoluminescence (PL). From the PL peak wavelength (λ) and decay lifetime (τ), two PL sources are distinguished: (i) quasi-direct recombination of excitons of Si-nanoparticles (SiNPs), appearing after thermal annealing (λ > 720 nm, τ ∝ μs), and (ii) fast-decay PL, possibly due to oxide-related defects (λ ∝ 575-690 nm, τ ∝ ns). The fast-decay PL (ii) observed before and after ion irradiation is induced by ion implantation. It is found that this fast-decay luminescence decreases for higher irradiation fluence of MeV heavy ions. After thermal annealing (forming SiNPs), the SiNP PL is reduced for samples irradiated by MeV heavy ions but found to stabilize at higher level for higher irradiation flux; the (ii) band vanishes as a result of annealing. The results are discussed in terms of the influence of electronic and nuclear stopping powers. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Exfoliation of GaAs caused by MeV 1H and 4He ion implantation at left angle 100 right angle , left angle 110 right angle axial and random orientations

International Nuclear Information System (INIS)

Rauhala, E.; Raeisaenen, J.

1994-01-01

The exfoliation procedure of the ion range determination of gaseous implants in single crystal GaAs is investigated. The correlation of the observed crater depth with the ion range is studied for random, left angle 100 right angle and left angle 110 right angle axial orientation high dose implantations of 1.5-2.5 MeV 1 H and 4 He ions. Depending on the experimental conditions, the crater depths corresponded to range values between the modal range and the range maximum. The observed crater depths could be related to the actual He concentration depth distributions by determining the profiles of the 4 He implants by 2.7 MeV proton backscattering. The implantation parameters affecting the exfoliation process, and especially the increase rate of the sample temperature, are investigated. The range distribution parameters for the 1.5 MeV 4 He implants are presented. ((orig.))

Effect of MeV energy He and N pre-implantation on the formation of porous silicon

Energy Technology Data Exchange (ETDEWEB)

Manuaba, A. E-mail: manu@rmki.kfki.hu; Paszti, F.; Ortega, C.; Grosman, A.; Horvath, Z.E.; Szilagyi, E.; Khanh, N.Q.; Vickridge, I

2001-06-01

The effects of MeV energy He and N pre-implantation of Si substrate on the structure of porous silicon formed by anodic etching were studied by measuring the depth profiles of {sup 15}N decorating the pores walls. Radiation damage was recovered by annealing after the implantation. It was found that the He implant accelerates the etching process, probably due to the bubbles or the remaining lattice damage. At a dose of 8x10{sup 16} ions/cm{sup 2} the He containing layer was formed with a significantly enhanced porosity due to the contribution of the large-sized bubbles. At the highest dose of 32.5x10{sup 16} ions/cm{sup 2} flaking took place during the anodic etching. In contrast to He, N stopped the anodic etching at a depth of critical N concentration of {approx}0.9 at.%. For the lowest implantation dose, where the peak concentration was below this limit, the pores propagate through the implanted layer with an enhanced speed.

Nonlinear optical waveguides produced by MeV ion implantation in LiNbO3

International Nuclear Information System (INIS)

Sarkisov, S.S.; Curley, M.J.; Williams, E.K.; Ila, D.; Svetchnikov, V.L.; Zandbergen, H.W.; Zykov, G.A.; Banks, C.; Wang, J.-C.; Poker, D.B.; Hensley, D.K.

2000-01-01

We analyze microstructure, linear and nonlinear optical properties of planar waveguides produced by implantation of MeV Ag ions into LiNbO 3 . Linear optical properties are described by the parameters of waveguide propagation modes and optical absorption spectra. Nonlinear properties are described by the nonlinear refractive index. Operation of the implanted crystal as an optical waveguide is due to modification of the linear refractive index of the implanted region. The samples as implanted do not show any light-guiding. The implanted region has amorphous and porous microstructure with the refractive index lower than the substrate. Heat treatment of the implanted samples produces planar light-guiding layer near the implanted surface. High-resolution electron microscopy reveals re-crystallization of the host between the surface and the nuclear stopping region in the form of randomly oriented crystalline grains. They make up a light-guiding layer isolated from the bulk crystal by the nuclear stopping layer with low refractive index. Optical absorption of the sample as implanted has a peak at 430 nm. This peak is due to the surface plasmon resonance in nano-clusters of metallic silver. Heat treatment of the samples shifts the absorption peak to 545 nm. This is more likely due to the increase of the refractive index back to the value for the crystalline LiNbO 3 . The nonlinear refractive index of the samples at 532 nm (of the order of 10 -10 cm 2 W -1 ) was measured with the Z-scan technique using a picosecond laser source. Possible applications of the waveguides include ultra-fast photonic switches and modulators

Radiation-induced effects in MgO single crystal by 200 keV and 1 MeV Ni ion implantation

Energy Technology Data Exchange (ETDEWEB)

Takahashi, Ryohei; Nakai, Yoshihiro; Hamaguchi, Dai [Kyoto Inst. of Tech. (Japan); and others

1997-03-01

MgO(100) single crystals were implanted with 1.0 MeV and 200 keV Ni ions between 10{sup 15} and 10{sup 17} ions/cm{sup 2} at room temperature. Before and after thermal annealing the radiation damage and the lattice location of implanted Ni ions were analyzed by using Rutherford backscattering spectrometry with channeling and optical absorption measurements. For 1.0 MeV Ni ions, the disorder of Mg atoms increased slowly with ion dose near surface region, while it increased sharply and saturated with ion dose from 2x10{sup 16} ions/cm{sup 2} near ion range. The radiation damage was recovered and implanted Ni ions diffused to the whole of crystal and occupied substitutional positions after 1400degC annealing. For 200 keV Ni ions, the disorder of Mg atoms increased with dose near ion range and had a maximum at about 5x10{sup 16} ions/cm{sup 2}. This tendency agrees with the behavior of color centers obtained from optical measurements. For thermal annealing the radiation damage did not change during 500degC annealing, but the aggregate centers appeared after 300degC annealing. (author)

High energy P implants in silicon

International Nuclear Information System (INIS)

Raineri, V.; Cacciato, A.; Benyaich, F.; Priolo, F.; Rimini, E.; Galvagno, G.; Capizzi, S.

1992-01-01

Phosphorus ions in the energy range 0.25-1 MeV and in the dose range 2x10 13 -1x10 15 P/cm 2 were implanted into (100) Si single crystal at different tilt angles. In particular channeling and random conditions were investigated. For comparison some implants were performed on samples with a 2 μm thick surface amorphous layer. Chemical concentration P profiles were obtained by secondary ion mass spectrometry. Carrier concentration and mobility profile measurements were carried out by sheet resistance and Hall measurements on implanted van der Pauw patterns. Carrier concentration profiles were also obtained by spreading resistance (SR) measurements. The damage in the as-implanted samples was determined by backscattering and channeling spectrometry (RBS) as a function of the dose and implantation energy. Comparison of random implants in crystal with implants in amorphous layers shows that in the first case it is impossible to completely avoid the channeling tail. In the implants performed under channeling conditions at low doses the P profiles are flat over more than 2 μm thick layers. Furthermore, by increasing the implanted dose, the shape of the profiles dramatically changes due to the dechanneling caused by the crystal disorder. The data are discussed and compared with Monte Carlo simulations using the MARLOWE code. A simple description of the electronic energy loss provides an excellent agreement between the calculated and experimental profiles. (orig.)

Effects of high-energy (MeV) ion implantation of polyester films

International Nuclear Information System (INIS)

Ueno, Keiji; Matsumoto, Yasuyo; Nishimiya, Nobuyuki; Noshiro, Mitsuru; Satou, Mamoru

1991-01-01

The effects of high-energy ion beam irradiation on polyester (PET) films using a 3 MeV tandem-type ion beam accelerator were studied. O, Ni, Pt, and Au as ion species were irradiated at 10 14 -10 15 ions/cm 2 on 50 μm thick PET films. Physical properties and molecular structure changes were studied by the surface resistivity measurements and RBS. The surface resistivity decreases with an increase in irradiation dose. At 10 15 ions/cm 2 irradiation, the surface resistivity is 10 8 Ω/□. According to RBS and XPS analyses, some carbon and oxygen atoms in the PET are replaced by implanted ions and the -C=O bonds are destroyed easily by the ion beam. (orig.)

Positron probing of open vacancy volume of phosphorus-vacancy complexes in float-zone n-type silicon irradiated by 0.9-MeV electrons and by 15-MeV protons

Energy Technology Data Exchange (ETDEWEB)

Arutyunov, Nikolay [Department of Physics, Martin Luther University Halle (Germany); Ioffe Physico-Technical Institute, St. Petersburg (Russian Federation); Institute of Ion-Plasma and Laser Technologies (Institute of Electronics), Tashkent (Uzbekistan); Emtsev, Vadim; Oganesyan, Gagik [Ioffe Physico-Technical Institute, St. Petersburg (Russian Federation); Elsayed, Mohamed [Department of Physics, Martin Luther University Halle (Germany); Faculty of Science, Department of Physics, Minia University (Egypt); Krause-Rehberg, Reinhard [Department of Physics, Martin Luther University Halle (Germany); Abrosimov, Nikolay [Leibniz Institute for Crystal Growth, Berlin (Germany); Kozlovski, Vitalii [St. Petersburg State Polytechnical University (Russian Federation)

2017-07-15

For the first time the samples, cut from the same wafer of crystals of float-zone silicon, n-FZ-Si(P) and n-FZ-Si(Bi), were subjected to irradiation with 0.9-MeV electrons and 15-MeV protons at RT for studying them by low-temperature positron annihilation lifetime spectroscopy. Measurements of Hall effect have been used for the materials characterization. The discussion is focused on the open vacancy volume (V{sub op}) of the thermally stable group-V-impurity-vacancy complexes comprising the phosphorus atoms; the bismuth-related vacancy complexes are briefly considered. The data of positron probing of PV pairs (E-centers), divacancies, and the thermally stable defects in the irradiated n-FZ-Si(P) materials are compared. Beyond a reliable detecting of the defect-related positron annihilation lifetime in the course of isochronal annealing at ∝ 500 C, the recovery of concentration of phosphorus-related shallow donor states continues up to ∝650-700 C. The open vacancy volumes V{sub op} to be characterized by long positron lifetimes Δτ{sub 2} ∝271-289 ps in (gr.-V-atom)-V{sub op} complexes are compared with theoretical data available for the vacancies, τ(V{sub 1}), and divacancies, τ(V{sub 2}). The extended semi-vacancies, 2V{sub s-ext}, and relaxed vacancies, 2V{sub inw}, are proposed as the open volume V{sub op} in (gr.-V-atom)-V{sub op} complexes. It is argued that at high annealing temperature the defect P{sub s}-V{sub op}-P{sub s} is decomposed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Microbeam line of MeV heavy ions for materials modification and in-situ analysis

International Nuclear Information System (INIS)

Horino, Yuji; Chayahara, Akiyoshi; Kiuchi, Masato; Fujii, Kanenaga; Satoh, Mamoru; Takai, Mikio.

1990-01-01

A microbeam line for MeV heavy ions of almost any element has been developed for microion-beam processing such as maskless MeV ion implantation and its in-situ analysis. Beam spot sizes of 4.0 μm x 4.0 μm for 3 MeV C 2+ and 9.6 μm x 4.8 μm for 1.8 MeV Au 2+ beams were obtained. Maskless MeV gold ion implantation to a silicon substrate and in-situ microanalysis before and after ion implantation were demonstrated. (author)

Determination of phosphorus and calcium in biological samples by activation with 14 MeV neutrons; Determinacao de fosforo e calcio em amostras biologicas por ativacao com neutrons de 14 MeV

Energy Technology Data Exchange (ETDEWEB)

Berretta, Jose Roberto

1995-07-01

Analytical methods for phosphorus and calcium in biological samples by means of activation with 14 MeV neutrons, using the Van de Graaff accelerator from the Instituto de Pesquisas Energeticas e Nucleares, SP, Brazil are developed. For phosphorus analysis, powder samples were pressed into pellets, weighed and transferred to polyethylene plastic envelopes. The pellets with cadmium shielding were irradiated under a fast neutron flux for 5 to 10 minutes, and further counted in a HPGe detector for 5 minutes. Calcium analysis was performed by cyclic irradiation. Samples were irradiated for 10 minutes. After a decay time of 2 minutes, gamma counting was performed for 10 minutes. After a decay time of 2 minutes, a new irradiation ws made. The irradiation cycle was repeated 5 times and the counting spectrum obtained in each cycle was accumulated in the multi channel analyser. The variation of the neutron flux was followed by using a BF{sub 3} detector calibrated with and aluminium monitor. By means of the gamma spectrum and the neutron counting of the BF{sub 3} detector it was possible to estimate phosphorus and calcium concentrations in the sample analyzed. The methods were checked in the reference samples from the International Atomic Energy Agency and in commercial samples of powder milk, fertilizer and animal bone. Phosphorus contents in bone (A3/74) and milk (A-11) reference materials were (15.6 +- 1.8%) and (0.9 +- 0.1)%, respectively. These values are in good agreement to the certified values (15.5 +- 0.5)% and (0.910 +- 0.102)%, respectively. Calcium analysis carried out in bone (A3/74) presented a value of (31.8+-4.1)% and the certified value was of (31.3 +- 0.3)%. Detection limits for phosphorus and calcium were determined in different analyzed samples. The agreement of the results obtained with the certified values confirmed the suitability of the methods for phosphorus and calcium analysis. The methods are fast and laborious chemical procedures are not required

Ion beam synthesis of IrSi3 by implantation of 2 MeV Ir ions

International Nuclear Information System (INIS)

Sjoreen, T.P.; Chisholm, M.F.; Hinneberg, H.J.

1992-11-01

Formation of a buried IrSi 3 layer in (111) oriented Si by ion implantation and annealing has been studied at an implantation energy of 2 MeV for substrate temperatures of 450--550C. Rutherford backscattering (RBS), ion channeling and cross-sectional transmission electron microscopy showed that a buried epitaxial IrSi 3 layer is produced at 550C by implanting ≥ 3.4 x 10 17 Ir/cm 2 and subsequently annealing for 1 h at 1000C plus 5 h at 1100C. At a dose of 3.4 x 10 17 Ir/cm 2 , the thickness of the layer varied between 120 and 190 nm and many large IrSi 3 precipitates were present above and below the film. Increasing the dose to 4.4 x 10 17 Ir/cm 2 improved the layer uniformity at the expense of increased lattice damage in the overlying Si. RBS analysis of layer formation as a function of substrate temperature revealed the competition between the mechanisms for optimizing surface crystallinity vs. IrSi 3 layer formation. Little apparent substrate temperature dependence was evident in the as-implanted state but after annealing the crystallinity of the top Si layer was observed to deteriorate with increasing substrate temperature while the precipitate coarsening and coalescence improved

Study of phosphorus implanted and annealed silicon by electrical measurements and ion channeling technique

CERN Document Server

Hadjersi, T; Zilabdi, M; Benazzouz, C

2002-01-01

We investigated the effect of annealing temperature on the electrical activation of phosphorus implanted into silicon. The measurements performed using spreading resistance, four-point probe and ion channeling techniques have allowed us to establish the existence of two domains of variation of the electrical activation (350-700 deg. C) and (800-1100 deg. C). The presence of reverse annealing and the annihilation of defects have been put in a prominent position in the first temperature range. It has been shown that in order to achieve a complete electrical activation, the annealing temperature must belong to the second domain (800-1100 deg. C).

Optical waveguide formed in Yb:GdCOB and Yb:YCOB crystals by 3.0MeV O{sup +} implantation

Energy Technology Data Exchange (ETDEWEB)

Jiao, Yang, E-mail: sdujy@163.com [College of Physics and Electronics, Shandong Normal University, Jinan 250014 (China)

2013-07-15

Planar optical waveguides were formed in Yb:GdCOB and Yb:YCOB crystals by 3.0 MeV O{sup +} ion implantation at fluence of 2 × 10{sup 15} ions/cm{sup 2} at room temperature, respectively. The prism coupling method was performed to characterize the dark-mode property of the waveguides. The refractive index profiles in the waveguides were reconstructed by reflectivity calculation method (RCM). The results show that after the implantation, a 1.5 μm-wide region with enhanced refractive-index was formed beneath the sample surfaces to act as waveguide structures for both Yb:GdCOB and Yb:YCOB.

RBS studies of the lattice damage caused by 1 MeV Si+ implantation into Al0.3Ga0.7As/GaAs superlattices at elevated temperature

International Nuclear Information System (INIS)

Xu Tianbing; Zhu Peiran; Zhou Junsi; Li Daiqing; Gong Baoan; Wan Ya; Mu Shanming; Zhao Qingtai; Wang Zhonglie

1994-01-01

The lattice damage accumulation in GaAs and Al 0.3 Ga 0.7 As/GaAs superlattices by 1 MeV Si + irradiation at room temperature and 350 C has been studied. For irradiations at 350 C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 x 10 15 Si/cm 2 for GaAs, and is 5 x 10 15 Si/cm 2 for Al 0.8 Ga 0.7 As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350 C. The damage accumulation rate for 1 MeV Si ion implantation in Al 0.3 Ga 0.7 As/GaAs superlattice is less than that in GaAs. (orig.)

Specific features of the current–voltage characteristics of SiO{sub 2}/4H-SiC MIS structures with phosphorus implanted into silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Mikhaylova, A. I., E-mail: m.aleksey.spb@gmail.com; Afanasyev, A. V.; Ilyin, V. A.; Luchinin, V. V. [St. Petersburg State Electrotechnical University LETI (Russian Federation); Sledziewski, T. [Friedrich–Alexander–Universität Erlangen–Nürnberg (Germany); Reshanov, S. A.; Schöner, A. [Ascatron AB (Sweden); Krieger, M. [Friedrich–Alexander–Universität Erlangen–Nürnberg (Germany)

2016-01-15

The effect of phosphorus implantation into a 4H-SiC epitaxial layer immediately before the thermal growth of a gate insulator in an atmosphere of dry oxygen on the reliability of the gate insulator is studied. It is found that, together with passivating surface states, the introduction of phosphorus ions leads to insignificant weakening of the dielectric breakdown field and to a decrease in the height of the energy barrier between silicon carbide and the insulator, which is due to the presence of phosphorus atoms at the 4H-SiC/SiO{sub 2} interface and in the bulk of silicon dioxide.

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

Energy Technology Data Exchange (ETDEWEB)

Willems van Beveren, L. H., E-mail: laurensw@unimelb.edu.au; Bowers, H.; Ganesan, K.; Johnson, B. C.; McCallum, J. C.; Prawer, S. [School of Physics, University of Melbourne, Parkville, Victoria 3010 (Australia); Liu, R. [SIMS Facility, Office of the Deputy-Vice Chancellor (Research and Development) Western Sydney University, Locked Bag 1797, Penrith, New South Wales 2751 (Australia)

2016-06-14

Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here, we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at. %. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.

In vitro activation of bone with 14 MeV neutrons

International Nuclear Information System (INIS)

Holmberg, P.; Hyvoenen, M.; Tarvainen, M.

1978-01-01

Samples of compact bone, bone marrow and spongiosa of cow femur have been irradiated in vitro with 14 MeV neutrons. The Ca/P ratio for compact bone was found to be 2.16+-0.24. The suitability of using 14 MeV neutrons and the 31 P(n, α) 28 Al reaction for studying the bone mineral composition in vitro is discussed. It was demonstrated that 14 MeV neutrons can be used for the determination of calcium and phosphorus in bone with the aid of the 44 Ca(n, p) 44 K and 31 P(n, α) 28 Al reactions, respectively. As the Ca/P ratio for compact bone is known, the calcium content can be deduced indirectly from a determination of the phosphorus. This method has the advantage of not requiring moderator materials, as in the case when the 48 Ca(n, γ) 49 Ca reaction is employed. The half-life of the 28 Al activity is short (T=2.243 m) so that only short irradiation times are necessary. (T.G.)

Fabrication of planar optical waveguides by 6.0 MeV silicon ion implantation in Nd-doped phosphate glasses

Science.gov (United States)

Shen, Xiao-Liang; Dai, Han-Qing; Zhang, Liao-Lin; Wang, Yue; Zhu, Qi-Feng; Guo, Hai-Tao; Li, Wei-Nan; Liu, Chun-Xiao

2018-04-01

We report the fabrication of a planar optical waveguide by silicon ion implantation into Nd-doped phosphate glass at an energy of 6.0 MeV and a dose of 5.0 × 1014 ions/cm2. The change in the surface morphology of the glass after the implantation can be clearly observed by scanning electron microscopy. The measurement of the dark mode spectrum of the waveguide is conducted using a prism coupler at 632.8 nm. The refractive index distribution of the waveguide is reconstructed by the reflectivity calculation method. The near-field optical intensity profile of the waveguide is measured using an end-face coupling system. The waveguide with good optical properties on the glass matrix may be valuable for the application of the Nd-doped phosphate glass in integrated optical devices.

Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

International Nuclear Information System (INIS)

Hlatshwayo, T T; Kuhudzai, R J; Njoroge, E G; Malherbe, J B; O’Connell, J H; Skuratov, V A; Msimanga, M

2015-01-01

The effect of swift heavy ion (Xe 167 MeV) irradiation on polycrystalline SiC individually implanted with 360 keV Kr and Xe ions at room temperature to fluences of 2  ×  10 16 cm −2 and 1  ×  10 16 cm −2 respectively, was investigated using transmission electron microscopy (TEM), Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Implanted specimens were each irradiated with 167 MeV Xe +26 ions to a fluence of 8.3  ×  10 14 cm −2 at room temperature. It was observed that implantation of 360 keV Kr and Xe ions individually at room temperature amorphized the SiC from the surface up to a depth of 186 and 219 nm respectively. Swift heavy ion (SHI) irradiation reduced the amorphous layer by about 27 nm and 30 nm for the Kr and Xe samples respectively. Interestingly, the reduction in the amorphous layer was accompanied by the appearance of randomly oriented nanocrystals in the former amorphous layers after SHI irradiation in both samples. Previously, no similar nanocrystals were observed after SHI irradiations at electron stopping powers of 33 keV nm −1 and 20 keV nm −1 to fluences below 10 14 cm −2 . Therefore, our results suggest a fluence threshold for the formation of nanocrystals in the initial amorphous SiC after SHI irradiation. Raman results also indicated some annealing of radiation damage after swift heavy ion irradiation and the subsequent formation of small SiC crystals in the amorphous layers. No diffusion of implanted Kr and Xe was observed after swift heavy ion irradiation. (paper)

0,01-5 MeV heavy ion accelerators

International Nuclear Information System (INIS)

Golubev, V.P.; Ivanov, A.S.; Nikiforov, S.A.; Svin'in, M.P.; Tarvid, G.V.; Troshikhin, A.G.; Fedotov, M.T.

1983-01-01

The results of development of an accelerating complex on the base of the UP-2-1 heavy ion charge exchange accelerator and IMPLANT-500 high-voltage heavy ion accelerator are given. The accelerating complex provides overlapping of the 0.01 MeV to 5 MeV energy range at accelerated beam currents of 10 -3 -10 -6 A order. The structural features of accelerators and their basic units and systems are considered. The UP-2-1 accelerator is designed for researches in the field of experimental physics and applied problem solutions. The IMPLANT-500 accelerator is designed for commercial ion-beam facilities with closed loop of silicon plate treatment

The studies of surface properties of 1.5 MeV Si-implanted silicon by multiphonon Raman spectrum

International Nuclear Information System (INIS)

Huang, X.

1995-01-01

The surface layer of crystalline silicon implanted by 1.5 MeV Si ions with doses ranging from 1 x 10 11 to 1 x 10 15 Si + cm -2 has been studied by two-phonon Raman spectra in both the acoustical overtone region and optical overtone region. Two-phonon Raman line intensities and shifts have been used to investigate the properties in the skin layer. The experimental two-phonon Raman spectra showed a decrease in intensity for both optical and acoustical two-phonon Raman peaks and also showed shifts by different amounts in different directions depending on the particular phonons. The stress values obtained by two-phonon Raman line shifts are compared with those obtained previously by one-phonon Raman shifts. The comparison shows that the surface defects make no contribution to two-phonon Raman line shifts. The two-phonon Raman line shifts show that the surface stress increases as a function of implantation doses. (author)

Deep level transient spectroscopy studies of charge traps introduced into silicon by channeling ion implantation of phosphorus

International Nuclear Information System (INIS)

McCallum, J.C.; Lay, M.; Deenapanray, P.N.K.; Jagadish, C.

2002-01-01

Full text: The operating conditions of a silicon-based quantum computer are expected to place stringent requirements on the quality of the material and the processes used to make it. In the Special Research Centre for Quantum Computer Technology, ion implantation is one of the principle processing techniques under investigation for forming an ordered array of phosphorus atoms. This technique introduces defect centres in silicon which act as charge traps. Charge traps are expected to be detrimental to operation of the device. These defect centres, their dependence on ion implantation and thermal annealing conditions are being quantified using Deep Level Transient Spectroscopy (DLTS). Since the aspect ratio of the masks required for the top-down fabrication process restrict the incident ions to a range of angles in which they may undergo channeling implantation in the silicon substrate, we have examined the effect of channeling implantation on the nature and quantity of the charge traps produced. This is the first time that DLTS studies have been performed for channeling implantation of a dopant species in silicon. DLTS is well-suited to the dose regime of ∼10 11 P/cm 3 required for the quantum computer, however, a standard DLTS measurement is unable to probe the shallow depth range of ∼ 20 nm required for the P atoms (∼ 10-15 keV implantation energy). Our aim has therefore been to perform P implants in the appropriate dose regime but using higher implantation energies, ∼ 75-450 keV, where DLTS can directly identify and profile the charge traps induced by the implantation step and monitor their annealing characteristics during subsequent processing. To map the behaviour observed in this energy regime onto the low energy range required for the quantum computer we are comparing the DLTS results to damage profiles predicted by the Monte Carlo code Crystal Trim which is used in the semiconductor industry to simulate ion implantation processes in crystalline

Restoration of an electrical breakdown Terahertz emitter by 2 MeV He+ ion implantation

International Nuclear Information System (INIS)

Yang kang; Ma Mingwang; Chen Xiliang; Zhu Zhiyong

2009-01-01

The irradiation of solids by energetic particles may cause extensive displacement cascades and point defects (vacancies and interstitials), and can be widely used for material modification. In order to repair an electrical breakdown photoconductive antenna (PCA), we irradiated the (100)-oriented, low-temperature (LT) grown GaAs substrate with 10 16 /cm 2 of 2 MeV helium ions. After being implanted, electric resistance of the PCA has increased from 800 Ω to 60 ΜΩ. The irradiated PCA exhibits improvements in the output power in comparison with the electrical breakdown PCA and its signal intensity has increased from 2 nA to 8 nA. Accordingly, its output power has become more than one order of magnitude higher than that before irradiation. The frequency range of PCA has obviously improvement. (authors)

Transverse microanalysis of high energy Ion implants

Energy Technology Data Exchange (ETDEWEB)

Dooley, S.P.; Jamieson, D.N.; Nugent, K.W.; Prawer, S. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1996-12-31

High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.

Transverse microanalysis of high energy Ion implants

Energy Technology Data Exchange (ETDEWEB)

Dooley, S P; Jamieson, D N; Nugent, K W; Prawer, S [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1997-12-31

High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.

Beam-envelope calculations of space-charge loaded beams in MeV dc ion-implantation facilities

International Nuclear Information System (INIS)

Urbanus, W.H.; Bannenberg, J.G.; Doorn, S.; Saris, F.W.; Koudijs, R.; Dubbelman, P.; Koelewijn, W.

1989-01-01

MeV dc ion accelerators are being developed that can deliver a beam current up to several hundred micro-amperes. At the low-energy part of the accelerator, the beam transport is space-charge dominated rather than emittance dominated. A system of differential equations has been derived, based on the Kapchinski-Vladimirski equations, which describe the envelope of a space-charge loaded ion beam, taking a longitudinal electrical field in an accelerating tube into account. The equations have been used to design the accelerator of a high-current 1 MV heavy-ion implantation facility. Furthermore, the design of a 2 MV accelerator is presented, which is used for analyzing techniques such as RBS and PIXE. Both facilities are based on single-ended Van de Graaff accelerators. (orig.)

Zinc and phosphorus co-implantation in indium phosphide

International Nuclear Information System (INIS)

Yu, K.M.; Ridgway, M.C.

1998-01-01

Electrical activation and dopant diffusion in Zn-implanted InP after rapid thermal annealing have been investigated. For an as-implanted Zn concentration of ∼4x10 19 thinspcm -3 , only ∼7% of the implanted Zn atoms formed electrically active shallow acceptors following a 950thinsp degree C/5 s annealing cycle. The low activation was the result of rapid Zn out-diffusion emdash only ∼14% of the implanted dopant was retained after annealing. A significant enhancement in electrical activation and a reduction in Zn loss were achieved in Zn+P co-implanted samples which yielded a net hole concentration of ≤6x10 18 thinspcm -3 and >50% Zn retention. The saturation of the free hole concentration in Zn+P co-implanted samples was attributed to the formation of Zn interstitial donors and Group-V-related donor-type native defects. For comparison, Zn+Al and Zn+Al+P co-implanted samples were also examined to distinguish the relative influences of implantation-induced disorder and nonstoichiometry on electrical activation and dopant diffusion. For the given implant conditions, we found that nonstoichiometry was the dominant influence. copyright 1998 American Institute of Physics

Strain evolution in Si substrate due to implantation of MeV ion observed by extremely asymmetric x-ray diffraction

International Nuclear Information System (INIS)

Emoto, T.; Ghatak, J.; Satyam, P. V.; Akimoto, K.

2009-01-01

We studied the strain introduced in a Si(111) substrate due to MeV ion implantation using extremely asymmetric x-ray diffraction and measured the rocking curves of asymmetrical 113 diffraction for the Si substrates implanted with a 1.5 MeV Au 2+ ion at fluence values of 1x10 13 , 5x10 13 , and 1x10 14 /cm 2 . The measured curves consisted of a bulk peak and accompanying subpeak with an interference fringe. The positional relationship of the bulk peak to the subpeak and the intensity variation of those peaks with respect to the wavelengths of the x rays indicated that crystal lattices near the surface were strained; the lattice spacing of surface normal (111) planes near the surface was larger than that of the bulk. Detailed strain profiles along the depth direction were successfully estimated using a curve-fitting method based on Darwin's dynamical diffraction theory. Comparing the shapes of resultant strain profiles, we found that a strain evolution rapidly occurred within a depth of ∼300 nm at fluence values between 1x10 13 and 5x10 13 /cm 2 . This indicates that formation of the complex defects progressed near the surface when the fluence value went beyond a critical value between 1x10 13 and 5x10 13 /cm 2 and the defects brought a large strain to the substrate.

Leaky mode suppression in planar optical waveguides written in Er:TeO{sub 2}–WO{sub 3} glass and CaF{sub 2} crystal via double energy implantation with MeV N{sup +} ions

Energy Technology Data Exchange (ETDEWEB)

Bányász, I., E-mail: banyasz@sunserv.kfki.hu [Department of Crystal Physics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O.B. 49, H-1525 Budapest (Hungary); Zolnai, Z.; Fried, M. [Research Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungarian Academy of Sciences, P.O.B. 49, Budapest H-1525 (Hungary); Berneschi, S. [MDF-Lab, “Nello Carrara” Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); “Enrico Fermi” Center for Study and Research, Piazza del Viminale 2, 00184 Roma (Italy); Pelli, S.; Nunzi-Conti, G. [MDF-Lab, “Nello Carrara” Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy)

2014-05-01

Ion implantation proved to be an universal technique for producing waveguides in most optical materials. Tellurite glasses are good hosts of rare-earth elements for the development of fibre and integrated optical amplifiers and lasers covering all the main telecommunication bands. Er{sup 3+}-doped tellurite glasses are good candidates for the fabrication of broadband amplifiers in wavelength division multiplexing around 1.55 μm, as they exhibit large stimulated cross sections and broad emission bandwidth. Calcium fluoride is an excellent optical material, due to its perfect optical characteristics from UV wavelengths up to near IR. It has become a promising laser host material (doped with rare earth elements). Ion implantation was also applied to optical waveguide fabrication in CaF{sub 2} and other halide crystals. In the present work first single-energy implantations at 3.5 MeV at various fluences were applied. Waveguide operation up to 1.5 μm was observed in Er:Te glass, and up to 980 nm in CaF{sub 2}. Then double-energy implantations at a fixed upper energy of 3.5 MeV and lower energies between 2.5 and 3.2 MeV were performed to suppress leaky modes by increasing barrier width.

RBS/NRA/channeling analysis of implanted immiscible species

International Nuclear Information System (INIS)

Naramoto, H.; Yamamoto, S.; Narumi, K.

2000-01-01

Ion implantation of immiscible elements was performed to prepare supersaturated substance for further heat treatment. 63 Cu ion implantation was made at low temperature into Nb(1 0 0), (1 1 0) and (1 1 1) single crystal films on sapphire, and the induced lattice damage and the lattice location of implanted Cu atoms were analyzed by 2.7 MeV 4 He + RBS/channeling. The coherent segregation of 63 Cu atoms with specific crystallographic orientations was found in the near surface region (Cu(1 0 0)/Nb(1 0 0), Cu(1 1 1)/Nb(1 1 0) and Cu(1 1 0)/Nb(1 1 1)). The same kind of study was also made in Ir(1 0 0)/MgO(1 0 0) implanted with 50 keV 12 C + ions. In addition to 2 MeV 4 He + RBS/channeling, 1.22 MeV d + RBS/NRA/channeling was employed to detect implanted 12 C atoms. The results suggest that 12 C atoms are aligned along Ir direction at least by low temperature implantation followed by thermal annealing

Determination of phosphorus distribution in the region of a SiO2-Si interface by substoichiometric analysis

International Nuclear Information System (INIS)

Shigematsu, T.; Yonezawa, H.

1994-01-01

A simplified method for the substoichiometric analysis of phosphorus has been developed and applied to determine the concentration distribution of phosphorus in the region of a SiO 2 -Si interface in order to explain why phosphorus is lost from the ion-implanted silicon surface throughout the oxidation and oxide removal processes. It is revealed that phosphorus piles up on the SiO 2 side at the interface by the thermal oxidation of silicon surface and is removed with the oxide by wet etching and with the resulting silicon by RCA cleaning. This results in a total loss of ion-implanted phosphorus of 3.5%. (author) 11 refs.; 2 figs.; 3 tabs

Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition

International Nuclear Information System (INIS)

Cao, B Q; Lorenz, M; Rahm, A; Wenckstern, H von; Czekalla, C; Lenzner, J; Benndorf, G; Grundmann, M

2007-01-01

Phosphorus-doped ZnO (ZnO:P) nanowires were successfully prepared by a novel high-pressure pulsed-laser deposition process using phosphorus pentoxide as the dopant source. Detailed cathodoluminescence studies of single ZnO:P nanowires revealed characteristic phosphorus acceptor-related peaks: neutral acceptor-bound exciton emission (A 0 , X, 3.356 eV), free-to-neutral-acceptor emission (e, A 0 , 3.314 eV), and donor-to-acceptor pair emission (DAP, ∼3.24 and ∼3.04 eV). This means that stable acceptor levels with a binding energy of about 122 meV have been induced in the nanowires by phosphorus doping. Moreover, the induced acceptors are distributed homogeneously along the doped nanowires

Vacancy supersaturations produced by high-energy ion implantation

International Nuclear Information System (INIS)

Venezia, V.C.; Eaglesham, D.J.; Jacobson, D.C.; Gossmann, H.J.

1998-01-01

A new technique for detecting the vacancy clusters produced by high-energy ion implantation into silicon is proposed and tested. This technique takes advantage of the fact that metal impurities, such as Au, are gettered near one-half of the projected range (1/2 R p ) of MeV implants. The vacancy clustered region produced by a 2 MeV Si + implant into silicon has been labeled with Au diffused in from the front surface. The trapped Au was detected by Rutherford backscattering spectrometry (RBS) to profile the vacancy clusters. Cross section transmission electron microscopy (XTEM) analysis shows that the Au in the region of vacancy clusters is in the form of precipitates. By annealing MeV implanted samples prior to introduction of the Au, changes in the defect concentration within the vacancy clustered region were monitored as a function of annealing conditions

Phosphorus determination in bone samples by activation analysis using fast neutrons

International Nuclear Information System (INIS)

Madi Filho, T.; Cunha, I.I.L.

1992-01-01

In this report, the phosphorus determination in animal bone samples was made by means of the irradiation of samples using 14 MeV neutron generator (Van de Graaff accelerator). Induced radiation in irradiated material was measured using a NaI(Tl) detector. The method was tested in a IAEA certified standard, being obtained the values of 15,48% and 15,75%. The content of phosphorus was obtained by using two different calculating methods. Based on the experiments performed it was possible to establish a method of phosphorus analysis in bone using the Van de Graaff accelerator. (author)

Charged particle activation analysis of phosphorus in biological materials

International Nuclear Information System (INIS)

Masumoto, K.; Yagi, M.

1983-01-01

Charged particle activation analysis of phosphorus in biological materials using the 31 P(α,n) sup(34m)Cl reaction has been studied. Since sup(34m)Cl is also produced by the 32 S(α,pn) and the 35 Cl(α,α'n) reactions, the thick-target yield curves on phosphorus, sulfur and chlorine were determined in order to choose the optimum irradiation conditions. As a result, it was found that the activation analysis for phosphorus without interferences from sulfur and chlorine is possible by bombarding with less than 17 MeV alphas. The applicability of this method to biological samples was then examined by irradiating several standard reference materials. It was confirmed that phosphorus can readily be determined at the detection limit of 1μg free from interferences due to the matrix elements. (author)

Effects of phosphorus, silicon and sulphur on microstructural evolution in austenitic stainless steels during electron irradiation

International Nuclear Information System (INIS)

Fukuya, K.; Nakahigashi, S.; Ozaki, S.; Shima, S.

1991-01-01

Fe-18Cr-9Ni-1,5Mn austenitic alloys containing phosphorus, silicon and sulphur were irradiated by 1 MeV electrons at 573-773 K. Phosphorus increased the interstitial loop nucleation and decreased the void swelling by increasing void number density and suppressing void growth. Silicon had a similar effect to phosphorus but its effect was weaker than phosphorus. Sulphur enhanced void swelling through increasing the void density. Nickel enrichment at grain boundaries was suppressed only in the alloy containing phosphorus. These phosphorus effects may be explained by a strong interaction with interstitials resulting in a high density of sinks for point defects. (orig.)

Interaction of implanted deuterium and helium with beryllium: radiation enhanced oxidation

International Nuclear Information System (INIS)

Langley, R.A.

1979-01-01

The interaction of implanted deuterium and helium with beryllium is of significant interest in the application of first wall coatings and other components of fusion reactors. Electropolished polycrystalline beryllium was first implanted with an Xe backscatter marker at 1.98 MeV followed by either implantation with 5 keV diatomic deuterium or helium. A 2.0 MeV He beam was used to analyze for impurity buildup; namely oxygen. The oxide layer thickness was found to increase linearly with increasing implant fluence. A 2.5 MeV H + beam was used to depth profile the D and He by ion backscattering. In addition the retention of the implant was measured as a function of the implant fluence. The mean depth of the implant was found to agree with theoretical range calculations. Scanning electron microscopy was used to observe blister formation. No blisters were observed for implanted D but for implanted He blisters occurred at approx. 1.75 x 10 17 He cm -2 . The blister diameter increased with increasing implant fluence from about 0.8 μm at 10 18 He cm -2 to 5.5 μm at 3 x 10 18 He cm -2

Silicon exfoliation by hydrogen implantation: Actual nature of precursor defects

Energy Technology Data Exchange (ETDEWEB)

Kuisseu, Pauline Sylvia Pokam, E-mail: pauline-sylvia.pokam-kuisseu@cnrs-orleans.fr [CEMHTI-CNRS, 3A, rue de la férollerie, 45071 Orléans (France); Pingault, Timothée; Ntsoenzok, Esidor [CEMHTI-CNRS, 3A, rue de la férollerie, 45071 Orléans (France); Regula, Gabrielle [IM2NP-CNRS-Université d’Aix-Marseille, Avenue Escadrille Normandie Niemen, 13397 Marseille (France); Mazen, Frédéric [CEA-Leti, MINATEC campus, 17, rue des Martyrs, 38054 Grenoble Cedex 9 (France); Sauldubois, Audrey [Université d’Orléans, rue de Chartres – Collegium ST, 45067 Orléans (France); Andreazza, Caroline [ICMN-CNRS-Université d’Orléans, 1b rue de la férollerie, 45071 Orléans (France)

2017-06-15

MeV energy hydrogen implantation in silicon followed by a thermal annealing is a very smart way to produce high crystalline quality silicon substrates, much thinner than what can be obtained by diamond disk or wire sawing. Using this kerf-less approach, ultra-thin substrates with thicknesses between 15 µm and 100 µm, compatible with microelectronic and photovoltaic applications are reported. But, despite the benefits of this approach, there is still a lack of fundamental studies at this implantation energy range. However, if very few papers have addressed the MeV energy range, a lot of works have been carried out in the keV implantation energy range, which is the one used in the smart-cut® technology. In order to check if the nature and the growth mechanism of extended defects reported in the widely studied keV implantation energy range could be extrapolated in the MeV range, the thermal evolution of extended defects formed after MeV hydrogen implantation in (100) Si was investigated in this study. Samples were implanted at 1 MeV with different fluences ranging from 6 × 10{sup 16} H/cm{sup 2} to 2 × 10{sup 17} H/cm{sup 2} and annealed at temperatures up to 873 K. By cross-section transmission electron microscopy, we found that the nature of extended defects in the MeV range is quite different of what is observed in the keV range. In fact, in our implantation conditions, the generated extended defects are some kinds of planar clusters of gas-filled lenses, instead of platelets as commonly reported in the keV energy range. This result underlines that hydrogen behaves differently when it is introduced in silicon at high or low implantation energy. The activation energy of the growth of these extended defects is independent of the chosen fluence and is between (0.5–0.6) eV, which is very close to the activation energy reported for atomic hydrogen diffusion in a perfect silicon crystal.

Photoluminescence study of novel phosphorus-doped ZnO nanotetrapods synthesized by chemical vapour deposition

International Nuclear Information System (INIS)

Yu Dongqi; Hu Lizhong; Qiao Shuangshuang; Zhang Heqiu; Fu Qiang; Chen Xi; Sun Kaitong; Len, Song-En Andy; Len, L K

2009-01-01

Novel phosphorus-doped and undoped single crystal ZnO nanotetrapods were fabricated on sapphire by a simple chemical vapour deposition method, using phosphorus pentoxide (P 2 O 5 ) as the dopant source. The optical properties of the samples were investigated by photoluminescence (PL) spectroscopy. Low-temperature PL measurements of phosphorus-doped and undoped samples were compared, and the results indicated a decrease in deep level defects due to the incorporation of a phosphorus acceptor dopant. The PL spectrum of the phosphorus-doped sample at 10 K exhibited several acceptor-bound exciton related emission peaks. The effect of phosphorus doping on the optical characteristics of the samples was investigated by excitation intensity and temperature dependent PL spectra. The acceptor-binding energies of the phosphorus dopant were estimated to be about 120 meV, in good agreement with the corresponding theoretical and experimental values in phosphorus-doped ZnO films and nanowires.

Amorphization and the effect of implanted ions in SiC

International Nuclear Information System (INIS)

Snead, L.L.; Zinkle, S.J.

1994-01-01

The effects of implanted ion chemistry and displacement damage on the amorphization threshold dose of SiC were studied using cross-section transmission electron microscopy. Room temperature as well as 200 and 400 C irradiations were carried out with 3.6 MeV Fe, 1.8 MeV Cl, 1 MeV He or 0.56 MeV Si ions. The room temperature amorphization threshold dose in irradiated regions well separated from the implanted ions was found to range from 0.3 to 0.5 dpa for the four different ion species. The threshold dose for amorphization in the He, Si and Fe ion-implanted regions was also ∼0.3 to 0.5 dpa. On the other hand, the amorphization threshold in the Cl-implanted region was only about 0.1 dpa. The volume change associated with amorphization was ∼17%. No evidence for amorphization was obtained in specimens irradiated at 200 or 400 C. An understanding of the microstructural evolution of SiC under irradiation is critical to the application of these materials in fusion energy systems

Amorphization of tantalum by boron and phosphorus ion implantation

International Nuclear Information System (INIS)

Thome, L.; Benyagoub, A.; Bernas, H.; Pivin, J.C.; Cahn, R.W.

1984-01-01

The nature and depth dependence of the disorder produced by B and P implantation in Ta single crystals were studied in situ via channeling experiments and after implantation via grazing incidence electron diffraction experiments. The correlation of experimental results with implanted impurity profiles determined by SIMS shows that amorphous Ta-B and Ta-P alloys are produced for, respectively, 19% and 8% B and P concentrations in the implanted layer [fr

Interaction of implanted deuterium and helium with beryllium: radiation enhanced oxidation

Energy Technology Data Exchange (ETDEWEB)

Langley, R.A.

1979-01-01

The interaction of implanted deuterium and helium with beryllium is of significant interest in the application of first wall coatings and other components of fusion reactors. Electropolished polycrystalline beryllium was first implanted with an Xe backscatter marker at 1.98 MeV followed by either implantation with 5 keV diatomic deuterium or helium. A 2.0 MeV He beam was used to analyze for impurity buildup; namely oxygen. The oxide layer thickness was found to increase linearly with increasing implant fluence. A 2.5 MeV H/sup +/ beam was used to depth profile the D and He by ion backscattering. In addition the retention of the implant was measured as a function of the implant fluence. The mean depth of the implant was found to agree with theoretical range calculations. Scanning electron microscopy was used to observe blister formation. No blisters were observed for implanted D but for implanted He blisters occurred at approx. 1.75 x 10/sup 17/ He cm/sup -2/. The blister diameter increased with increasing implant fluence from about 0.8 ..mu..m at 10/sup 18/ He cm/sup -2/ to 5.5 ..mu..m at 3 x 10/sup 18/ He cm/sup -2/.

High energy ion implantation

International Nuclear Information System (INIS)

Ziegler, J.F.

1985-01-01

High energy ion implantation offers the oppertunity for unique structures in semiconductor processing. The unusual physical properties of such implantations are discussed as well as the special problems in masking and damage annealing. A review is made of proposed circuit structures which involve deep implantation. Examples are: deep buried bipolar collectors fabricated without epitaxy, barrier layers to reduce FET memory sensitivity to soft-fails, CMOS isolation well structures, MeV implantation for customization and correction of completed circuits, and graded reach-throughs to deep active device components. (orig.)

Annealing of ion implanted silicon

International Nuclear Information System (INIS)

Chivers, D.; Smith, B.J.; Stephen, J.; Fisher, M.

1980-09-01

The newer uses of ion implantation require a higher dose rate. This has led to the introduction of high beam current implanters; the wafers move in front of a stationary beam to give a scanning effect. This can lead to non-uniform heating of the wafer. Variations in the sheet resistance of the layers can be very non-uniform following thermal annealing. Non-uniformity in the effective doping both over a single wafer and from one wafer to another, can affect the usefulness of ion implantation in high dose rate applications. Experiments to determine the extent of non-uniformity in sheet resistance, and to see if it is correlated to the annealing scheme have been carried out. Details of the implantation parameters are given. It was found that best results were obtained when layers were annealed at the maximum possible temperature. For arsenic, phosphorus and antimony layers, improvements were observed up to 1200 0 C and boron up to 950 0 C. Usually, it is best to heat the layer directly to the maximum temperature to produce the most uniform layer; with phosphorus layers however it is better to pre-heat to 1050 0 C. (U.K.)

Effect of phosphorus on out-of-pile and in-pile behaviour of stabilized austenitic stainless steels

International Nuclear Information System (INIS)

Delalande, C.

1992-02-01

This work deals with the improvement of swelling resistance for austenitic stainless steels used as fuel pin cladding in Fast Breeder Reactor. The effect of phosphorus addition and multistabilization by Ti and Nb or Ti, Nb and V are studied on Fe-15Cr-15/25Ni based alloys. First, different ageings are performed to verify the stability of dislocation network, main condition of swelling absence at high irradiation temperature (T>550 deg C, and to study the precipitation, especially the one being able to form during irradiation and to control swelling at lower temperature. Then, 1 MeV electron irradiations are performed to estimate the swelling resistance of these multistabilized steels. Furthermore, neutron radiation induced microstructure of phosphorus modified steels already irradiated in reactor give us fundamental informations to predict and explain the effect of phosphorus and multistabilization on the behaviour of the multistabilized steels. Our results show that niobium plays the same role as titanium on the stabilization ratio in steels, but it is present in more phases. Vanadium seems to have less effect on stability of dislocation network and chemical composition of precipitates. Phosphorus increases the stability of dislocation network of multistabilized steels and FeNbP phosphides are observed at high temperature for phosphorus level above 600 ppm. 1 MeV electron irradiations show that multistabilized steels present good swelling resistance. Phosphorus addition increases the swelling resistance of neutron irradiated steels. (Author). refs., figs., tabs

Characterization of junctions produced by medium-energy ion implantation in silicon

International Nuclear Information System (INIS)

Monfret, A.

1970-01-01

Characteristics of diodes made by implanting 20 keV boron and phosphorus ions into silicon are reviewed. Special features of theses diodes are presented, and correlation with technology is studied. This paper includes three parts: - in the first part, the theory of range distribution is considered for both amorphous and single-crystal targets, - In the second part, a brief description of the experimental conditions is given. - In the third part, the experimental results are presented. The results lead to a schematic model of the component. They also show the influence of cleaning and annealing treatments from which optimized process of fabrication can be determined. In this study, the influence of a two stage annealing process is shown. For phosphorus and boron implants, the first stage is performed at 150 deg. C while the second stage is 450 deg. C for phosphorus and 550 deg. C for boron implants. The implanted diodes are found to exhibit good electrical characteristics. Comparisons with standard diffused diodes are quite favourable. (author) [fr

Annealing of Al implanted 4H silicon carbide

International Nuclear Information System (INIS)

Hallen, A; Suchodolskis, A; Oesterman, J; Abtin, L; Linnarsson, M

2006-01-01

Al ions were implanted with multiple energies up to 250 keV at elevated temperatures in n-type 4H SiC epitaxial layers to reach a surface concentration of 1x10 20 cm -3 . These samples were then annealed at temperatures between 1500 and 1950 deg. C. A similar 4H SiC epitaxial sample was implanted by MeV Al ions to lower doses and annealed only at 200 and 400 deg. C. After annealing, cross-sections of the samples were characterized by scanning spreading resistance microscopy (SSRM). The results show that the resistivity of high-dose Al implanted samples has not reached a saturated value, even after annealing at the highest temperature. For the MeV Al implanted sample, the activation of Al has not yet started, but a substantial annealing of the implantation induced damage can be seen from the SSRM depth profiles

Spectroscopy of bound multi exciton complexes and deep centers in implanted and annealed silicon

International Nuclear Information System (INIS)

Babich, V.M.; Valakh, M.Ya.; Kovalchuk, V.B.; Rudko, G.Yu.; Shakhrajchuk, N.I.

1989-01-01

The change of silicon properties relevant to device physics caused by ion implantation and thermal annealing is studied. It is shown that in boron-doped p-Si the increase of P + ions implantation doses from 10 12 to 10 14 ions/cm 2 lead to a decrease of the broadening of boron bound exciton bands. This behaviour is caused by implantation-induced disordering of the lattice. The subsequent thermal annealing restores the intensity and the halfwidth of the above-mentioned bands and initiates the increase of the bands which correspond to excitons bond on the implanted phosphorus ions. Measurements of phosphorus bound exciton band intensities are applicable to the characterization of the process of phosphorus activation. Analysis of low energy region of luminescence spectra of heat treated samples shows that there is a correlation between the process of implanted phosphorus activation and the one of radiation defects transformation. The influence of germanium doping on the generation of thermal donors by means of spectroscopy of deep centres luminescence has been investigated. It is shown that the introduction of germanium in concentrations of 10 19 -10 20 cm -3 effectively suppresses the generation of thermal donors and deep centres under investigation. (author)

Multi-dimensional microanalysis of masklessly implanted atoms using focused heavy ion beam

International Nuclear Information System (INIS)

Mokuno, Yoshiaki; Iiorino, Yuji; Chayahara, Akiyoshi; Kiuchi, Masato; Fujii, Kanenaga; Satou, Mamoru

1992-01-01

Multi-dimensional structure fabricated by maskless MeV gold implantation in silicon wafer was analyzed by 3 MeV carbon ion microprobe using a microbeam line developed at GIRIO. The minimum line width of the implanted region was estimated to be about 5 μm. The advantages of heavy ions for microanalysis were demonstrated. (author)

Solvent Extraction Separation of Phosphorus for the Measurement of 32P

International Nuclear Information System (INIS)

Kang, Sang Hoon; Lee, Heung N.; Ahn, Hong Joo; Han, Sun ho; Jee, Kwang Yong

2006-01-01

Phosphorus is a major element in life and plays essential roles in the human body. On the other hand, phosphorus organic compound has high toxicity, therefore, the determination of trace amount of phosphorus is important in environment studies. Development of an analytical method for the determination of low levels of phosphorus is very important as a very few analytical techniques yield reliable results for this element at trace levels. Radioactive phosphorus, 32 P (T1/2 = 14.3 d, Emax 1.71 MeV) is the highest energy beta-emitting radionuclides and now generally accepted as an effective therapeutic agent for chronic leukemia and excess red blood cells. But, 32 P used in diagnosis and treatment are generated radioactive waste such as pipette tips, latex gloves, angioplastic balloons, Kimwipes etc.. We'll analyze 32 P in medical radioactive waste in the future. Even if 32 P has low level activity and short halflife, we have to control radioactive materials in medical waste. In this work, experiment separation using solvent extraction of inactive phosphorus as preliminary experiments for the establishment of analysis. Phosphorus is extracted tri-n-octylamine (TNOA)/ xylene, which is the most suitable solvent and then is measured by UV-visable spectrophotometer

Preparation of air-settled, roll-thinned phosphorus targets

CERN Document Server

Lozowski, W R

1999-01-01

Red sup 3 sup 1 P targets of 2.6 and 2.9 mg/cm sup 2+-0.1 mg/cm sup 2 with 1-cmx2-cm side dimensions were prepared for a nuclear mass measurement which required good thickness uniformity. The thinner target, with 50 mu g/cm sup 2 of gold flashed on both surfaces, withstood a 173-MeV alpha beam of 175 nA for 18 h. Adaptations will be described for an Indiana University Cyclotron Facility air-settling method used to distribute phosphorus powder, as well as the methods developed for subsequent pressing, roll thinning, and dry release to obtain self-supporting targets. An envelope of gold foil, in contact with the phosphorus during each step, was instrumental in the process.

Recrystallization behaviour and electrical properties of germanium ion implanted polycrystalline silicon films

International Nuclear Information System (INIS)

Kang, Myeon-Koo; Matsui, Takayuki; Kuwano, Hiroshi

1996-01-01

The recrystallization behaviour of undoped and phosphorus-doped polycrystalline silicon films amorphized by germanium ion implantation at doses ranging from 1 x 10 15 to 1 x 10 16 cm -2 are investigated, and the electrical properties of phosphorus-doped films after recrystallization are studied. The phosphorus doping concentration ranges from 3 x 10 18 to 1 x 10 20 cm -3 . It is found that the nucleation rate decreases for undoped films and increases for phosphorus-doped films with increasing germanium dose; the growth rates decrease for both doped and undoped films. The decrease in nucleation rate is caused by the increase in implantation damage. The decrease in growth rate is considered to be due to the increase in lattice strain. The grain size increases with germanium dose for undoped films, but decreases for phosphorus-doped films. The dependence of the electrical properties of the recrystallized films as a function of phosphorus doping concentration with different germanium doses can be explained in terms of the grain size, crystallinity and grain boundary barrier height. (Author)

Secondary poisoning of kestrels by white phosphorus

Science.gov (United States)

Sparling, D.W.; Federoff, N.E.

1997-01-01

Since 1982, extensive waterfowl mortality due to white phosphorus (P4) has been observed at Eagle River Flats, a tidal marsh near Anchorage, Alaska. Ducks and swans that ingest P4 pellets become lethargic and may display severe convulsions. Intoxicated waterfowl attract raptors and gulls that feed on dead or dying birds. To determine if avian predators can be affected by secondary poisoning, we fed American kestrels (Falco sparverius) 10-day-old domestic chickens that had been dosed with white phosphorus. Eight of 15 kestrels fed intact chicks with a pellet of P4 implanted in their crops died within seven days. Three of 15 kestrels fed chicks that had their upper digestive tracts removed to eliminate any pellets of white phosphorus also died. Hematocrit and hemoglobin in kestrels decreased whereas lactate dehydrogenaseL, glucose, and alanine aminotransferase levels in plasma increased with exposure to contaminated chicks. Histological examination of liver and kidneys showed that the incidence and severity of lesions increased when kestrels were fed contaminated chicks. White phosphorus residues were measurable in 87% of the kestrels dying on study and 20% of the survivors. This study shows that raptors can become intoxicated either by ingesting portions of digestive tracts containing white phosphorus pellets or by consuming tissues of P4 contaminated prey.

Solvent Extraction Separation of Phosphorus for the Measurement of {sup 32}P

Energy Technology Data Exchange (ETDEWEB)

Kang, Sang Hoon; Lee, Heung N.; Ahn, Hong Joo; Han, Sun ho; Jee, Kwang Yong [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

2006-07-01

Phosphorus is a major element in life and plays essential roles in the human body. On the other hand, phosphorus organic compound has high toxicity, therefore, the determination of trace amount of phosphorus is important in environment studies. Development of an analytical method for the determination of low levels of phosphorus is very important as a very few analytical techniques yield reliable results for this element at trace levels. Radioactive phosphorus, {sup 32}P (T1/2 = 14.3 d, Emax 1.71 MeV) is the highest energy beta-emitting radionuclides and now generally accepted as an effective therapeutic agent for chronic leukemia and excess red blood cells. But, {sup 32}P used in diagnosis and treatment are generated radioactive waste such as pipette tips, latex gloves, angioplastic balloons, Kimwipes etc.. We'll analyze {sup 32}P in medical radioactive waste in the future. Even if {sup 32}P has low level activity and short halflife, we have to control radioactive materials in medical waste. In this work, experiment separation using solvent extraction of inactive phosphorus as preliminary experiments for the establishment of analysis. Phosphorus is extracted tri-n-octylamine (TNOA)/ xylene, which is the most suitable solvent and then is measured by UV-visable spectrophotometer.

Structural investigations of amorphised iron and nickel by high-fluence metalloid ion implantation

International Nuclear Information System (INIS)

Rauschenbach, B.; Otto, G.; Hohmuth, K.; Heera, V.

1987-01-01

Boron, phosphorus and arsenic ions have been implanted into evaporated iron and nickel thin films at room temperature, and the implantation-induced microstructure has been investigated by high-voltage electron microscopy and transmission high energy electron diffraction. The metal films were implanted with ions to a constant dose of 1 x 10 17 and 5 x 10 17 ions/cm 2 respectively at energy of 50 keV. An amorphous layer was produced by boron and phosphorus ion implantation. Information on the atomic structure of the amorphous layers was obtained from the elastically diffracted electron intensity. On the basis of the correct scattering curves, the total interference function and the pair correlation function were determined. Finally, the atomic arrangement of the implantation-induced amorphous layers is discussed and structure produced by ion irradiation is compared with amorphous structures formed with other techniques. (author)

High energy ion implantation for IC processing

International Nuclear Information System (INIS)

Oosterhoff, S.

1986-01-01

In this thesis the results of fundamental research on high energy ion implantation in silicon are presented and discussed. The implantations have been carried out with the 500 kV HVEE ion implantation machine, that was acquired in 1981 by the IC technology and Electronics group at Twente University of Technology. The damage and anneal behaviour of 1 MeV boron implantations to a dose of 10 13 /cm 2 have been investigated as a function of anneal temperature by sheet resistance, Hall and noise measurements. (Auth.)

Characterization of diamond amorphized by ion implantation

International Nuclear Information System (INIS)

Allen, W.R.; Lee, E.H.

1992-01-01

Single crystal diamond has been implanted at 1 MeV with 2 x 10 20 Ar/m 2 . Rutherford backscattering spectrometry in a channeled geometry revealed a broad amorphized region underlying a thin, partially crystalline layer. Raman spectroscopy disclosed modifications in the bonding characteristic of the appearance of non-diamond carbon. The complementary nature of the two analysis techniques is demonstrated. The Knoop hardness of the implanted diamond was reduced by implantation

Investigation of phosphorous in thin films using the {sup 31}P(α,p){sup 34}S nuclear reaction

Energy Technology Data Exchange (ETDEWEB)

Pitthan, E., E-mail: eduardo.pitthan@ufrgs.br [PGMICRO, UFRGS, 91509-900 Porto Alegre, RS (Brazil); Gobbi, A.L. [Laboratório Nacional de Nanotecnologia, 13083-100 Campinas, SP (Brazil); Stedile, F.C. [PGMICRO, UFRGS, 91509-900 Porto Alegre, RS (Brazil); Instituto de Química, UFRGS, 91509-900 Porto Alegre, RS (Brazil)

2016-03-15

Phosphorus detection and quantification were obtained, using the {sup 31}P(α,p){sup 34}S nuclear reaction and Rutherford Backscattering Spectrometry, in deposited silicon oxide films containing phosphorus and in carbon substrates implanted with phosphorus. It was possible to determine the total amount of phosphorus using the resonance at 3.640 MeV of the {sup 31}P(α,p){sup 34}S nuclear reaction in samples with phosphorus present in up to 23 nm depth. Phosphorous amounts as low as 4 × 10{sup 14} cm{sup −2} were detected. Results obtained by nuclear reaction were in good agreement with those from RBS measurements. Possible applications of phosphorus deposition routes used in this work are discussed.

The influence of phosphorus on the corrosion of iron in calcium nitrate

International Nuclear Information System (INIS)

Windisch, C.F. Jr.; Baer, D.R.; Jones, R.H.; Engelhard, M.H.

1992-01-01

This paper reports that intergranular stress corrosion cracking (IGSCC) of metallic alloys including iron is strongly influenced by the presence of grain boundary impurities such as phosphorus. In this study to determine how phosphorus affects the corrosion of ion, electrochemical polarization methods were used in conjunction with surface analyses employing ultrahigh vacuum transfer. Specifically, these methods were used to examine the corrosion of iron, iron/phosphorus alloys, and iron implanted with phosphorus in deaerated 55 weight percent Ca(NO 3 ) 2 solutions at 60 degrees C. The presence of phosphorus in iron accelerated corrosion in both the active and passive regions, with the effect being more pronounced in the passive region. In the active region, the phosphorus was oxidized to phosphate which, in turn, appeared to assist the dissolution of the semiprotective Fe 3 O 4 . In the passive region, the phosphorus (when unoxidized) accelerated corrosion by some other mechanism. The FePO 4 that formed in the passive region did not inhibit passivation by, rather, was incorporated in the passive film. The chemical transformations would appear to explain, at least partly, the high IGSCC rates observed for ion containing phosphorus segregated at grain boundaries

Determination of phosphorus in semiconductor grade silicon by neutron activation analysis

International Nuclear Information System (INIS)

Jaskolska, H.; Rowinska, L.

1975-01-01

A method of determination of phosphorus in silicon has been elaborated. The separation of phosphorus is based on the extraction of phosphomolybdic complex in the presence of hold-back carriers of Ta and Au. Contamination factors for various impurities were determined. The lower limit of determination equals 3.10 -11 g P. Types of errors in the determination of concentration profiles are discussed. The method meets the following requirements: 1./ It ensures good separation of phosphorus from elements occuring in silicon plates (i.e. Ta, Au, Sn, Ge, Ce, Sb, As, Cu, and Na). 2./ It ensures high chemical yield of phosphorus separation. 3./ It ensures high efficiency of the measurement of 32 P β-activity. 4./ It is simple and rapid, since, for the determination of a implantation profile, it is necessary to analyse several tens of layers. (T.G.)

Electrical properties of the regrown implantation-induced amorphous layer on (1 1-bar 0 0)- and (1 1 2-bar 0)-oriented 6H-SiC

International Nuclear Information System (INIS)

Nakamura, Tomonori; Tanabe, Hitoshi; Hitomi, Takeshi; Satoh, Masataka

2003-01-01

In the (1 1-bar 0 0) and (1 1 2-bar 0)-oriented 6H-SiC, the electrical properties and activation process of the implanted phosphorus in the layer regrown from the implantation-induced amorphous layer are investigated by means of Hall effect measurement and Rutherford backscattering spectrometry. The samples are implanted by 60 keV phosphorus ions at room temperature with doses of 3 x 10 15 and 1 x 10 15 cm -2 to form implantation-induced amorphous layer and the partially disordered implant-layer, respectively. The implanted phosphorus in the implantation-induced amorphous layer can be electrically activated by annealing at 1000 deg. C. The electrical activity for the case of the implantation-induced amorphous layer (ratio of sheet carrier concentration to ion dose) is 2-3 times larger than that for the case of the partially disordered implant-layer for the annealing temperature of 1500 deg. C

"Doping" pentacene with sp(2)-phosphorus atoms: towards high performance ambipolar semiconductors.

Science.gov (United States)

Long, Guankui; Yang, Xuan; Chen, Wangqiao; Zhang, Mingtao; Zhao, Yang; Chen, Yongsheng; Zhang, Qichun

2016-01-28

Recent research progress in black phosphorus sheets strongly encourages us to employ pentacene as a parent system to systematically investigate how the "doping" of sp(2)-phosphorus atoms onto the backbone of pentacene influences its optical and charge transport properties. Our theoretical investigations proved that increasing the contribution of the pz atomic orbital of the sp(2)-phosphorus to the frontier molecular orbital of phosphapentacenes could significantly decrease both hole and electron reorganization energies and dramatically red-shift the absorption of pentacene. The record smallest hole and electron reorganization energies of 69.80 and 95.74 meV for heteropentacene derivatives were obtained. These results suggest that phosphapentacenes (or phosphaacenes) could be potential promising candidates to achieve both higher and balanced mobilities in organic field effect transistors and realize a better power conversion efficiency in organic photovoltaics.

Efficiency in the avail (by Com) of zinc (65ZnCl2) and phosphorus (Na H2 PO4) ions

International Nuclear Information System (INIS)

Calvache, Marcelo.

1994-01-01

The efficiency of corn to use phosphorus and zinc ions at different growing periods was determined in two soils Udic Eutrandept and Andic Haplustoll of Pichincha Province, after adding 10 ppm zinc labelled with 65Zn (gamma emisor, 1.115 meV), 50 and 100 ppm phosphorus, and a complementary fertilization. Root, stem and leaf samples were analyzed at 15 days intervals during the growing period. Zinc efficiency use was determined by isotopic method, and phosphorus by the non-isotopic. Significant differences were found for sampling period and soil types. The efficiency of use of zinc and phosphorus fertilizer increased with the age of the crop, being higher for the soil originally containing less Zn and P. Dry matter content increased linearly with phosphorus fertilizer addition

The role of phosphorus in the irradiation embrittlement of PWR pressure vessel steels

International Nuclear Information System (INIS)

Jones, R.B.; Buswell, J.T.

1987-02-01

An analysis has been performed of the influence of phosphorus on post-irradiation materials properties and microstructures determined on a variety of PWR steels and variants following exposure to MTR or reactor surveillance irradiations to doses not exceeding 7 x 10 19 n.cm -2 (E>1.0MeV) at 250-290 0 C. The irradiation-induced shifts in impact transition temperature, matrix hardening and the relative small angle neutron scattering response were found to rise most rapidly with increasing phosphorus when the copper content of the steel was 0.03 w/o. The sensitivity of the changes in mechanical properties to phosphorus content decreased as the copper content was increased. At copper levels typical of modern PWR steel manufacture (Cu 3 P) produced by the irradiation induced segregation of phosphorus to defect sinks and the depletion of phosphorus in solid solution as detected by high sensitivity electron microscopy and other analytical techniques. At higher levels of copper (approx. 0.3 w/o) the effect of phosphorus on properties was reduced by a factor of three due to the observed incorporation of phosphorus into the small copper precipitates formed during irradiation. Grain boundary embrittlement by phosphorus under irradiation is not thought to be important but further evidence concerning the post-irradiation fracture mode and the development of the deleterious influence of phosphorus with irradiation dose is required for a comprehensive understanding of its action. Some suggestions for future work are made. (author)

Fission neutron irradiation of copper containing implanted and transmutation produced helium

DEFF Research Database (Denmark)

Singh, B.N.; Horsewell, A.; Eldrup, Morten Mostgaard

1992-01-01

High purity copper containing approximately 100 appm helium was produced in two ways. In the first, helium was implanted by cyclotron at Harwell at 323 K. In the second method, helium was produced as a transmutation product in 800 MeV proton irradiation at Los Alamos, also at 323 K. The distribut......High purity copper containing approximately 100 appm helium was produced in two ways. In the first, helium was implanted by cyclotron at Harwell at 323 K. In the second method, helium was produced as a transmutation product in 800 MeV proton irradiation at Los Alamos, also at 323 K...... as well as the effect of the presence of other transmutation produced impurity atoms in the 800 MeV proton irradiated copper will be discussed....

Low dose monitoring by double implant technique in IC fabrication

International Nuclear Information System (INIS)

Ahmad, I.B.; Weidemann, J.

1995-01-01

The utilisation of low dose implant monitoring (using Boron) in a manufacturing line has been discussed. The utilisation of phosphorus ions as the second implant dose were also studied as comparison. The technique relies on the fact that the sheet resistant of doped layer will increase significantly when damaged by relatively low implant dose. The technique is very sensitive and applicable for adjusting the channel dose so that an accurate threshold voltage in MOS device could be achieved

Bond formation in hafnium atom implantation into SiC induced by high-energy electron irradiation

International Nuclear Information System (INIS)

Yasuda, H.; Mori, H.; Sakata, T.; Naka, M.; Fujita, H.

1992-01-01

Bilayer films of Hf (target atoms)/α-SiC (substrate) were irradiated with 2 MeV electrons in an ultra-high voltage electron microscope (UHVEM), with the electron beam incident on the hafnium layer. As a result of the irradiation, hafnium atoms were implanted into the SiC substrate. Changes in the microstructure and valence electronic states associated with the implantation were studied by a combination of UHVEM and Auger valence electron spectroscopy. The implantation process is summarized as follows. (1) Irradiation with 2 MeV electrons first induces a crystalline-to-amorphous transition in α-SiC. (2) Hafnium atoms which have been knocked-off from the hafnium layer by collision with the 2 MeV electrons are implanted into the resultant amorphous SiC. (3) The implanted hafnium atoms make preferential bonding to carbon atoms. (4) With continued irradiation, the hafnium atoms repeat the displacement along the beam direction and the subsequent bonding with the dangling hybrids of carbon and silicon. The repetition of the displacement and subsequent bonding lead to the deep implantation of hafnium atoms into the SiC substrate. It is concluded that implantation successfully occurs when the bond strength between a constituent atom of a substrate and an injected atom is stronger than that between constituent atoms of a substrate. (Author)

Study of high energy ion implantation of boron and oxygen in silicon

International Nuclear Information System (INIS)

Thevenin, P.

1991-06-01

Three aspects of high energy (0.5-3 MeV) light ions ( 11 B + and 16 O + ) implantation in silicon are examined: (1)Spatial repartition; (2) Target damage and (3) Synthesis by oxygen implantation of a buried silicon oxide layer

Phosphorus analysis in milk by activation with fast neutrons using Van de Graaff accelerator

International Nuclear Information System (INIS)

Berreta, Jose Roberto; Cunha, Ieda Irma Lamas

1996-01-01

Determination of phosphorus in milk by activation using 14 MeV neutrons generated by a Van de Graaff accelerator is related. Cyclic and conventional irradiations were performed. In both cases, the variation of the neutron flux was followed by a BF 3 detector, and mathematical equations were applied to the normalization of the counting rates. Results for phosphorus analysis in IAEA (International Atomic Energy Agency) reference material A-11 are (0.9 ± 0.1) % by conventional irradiation and (1.0±0.1) % by cyclic irradiation and the detection limits were of 0.12 mg and 0.04 mg, respectively, in 100 mg of sample. (author)

Surface PIXE analysis of phosphorus in a thin SiO2 (P, B) CVD layer deposited onto Si substrate

International Nuclear Information System (INIS)

Roumie, M.; Nsouli, B.

2001-01-01

Phosphorus determination, at level of percent, in Si matrix is not an easy analytical task. The analyzed materials arc Borophosphosilicate glass which are an important component of silicon based semiconductor technology. It's a thin SiO2 layer (400 nm) doped with boron and phosphorus using, in general, CVD (Chemical Vapor Deposition) process, in order to improve its plasticity, and deposited onto Si substrate. Therefore, the mechanical behaviour of the CVD SiO2 (P, B) layer is very sensitive to the phosphorus concentration. In this work we explore the capability of FIXE (Particle Induced X-ray Emission) to monitor a rapid and accurate quantification of P which is usually very low in such materials (few percent of the thin CVD layer deposited onto a silicon substrate). A systematic study is undertaken using Proton (0.5-3 MeV energy) and helium (1-3 MeV energy) beams, different thickness of X-ray absorber (131 and 146 μm of Kapton filter) and different tilting angles (0,45,60 and 80 deg.). The optimized measurement conditions should improve the P signal detection comparing to the Si and Background ones

Effect of High-Temperature Annealing on Ion-Implanted Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Hyunpil Boo

2012-01-01

Full Text Available P-type and n-type wafers were implanted with phosphorus and boron, respectively, for emitter formation and were annealed subsequently at 950∼1050∘C for 30∼90 min for activation. Boron emitters were activated at 1000∘C or higher, while phosphorus emitters were activated at 950∘C. QSSPC measurements show that the implied Voc of boron emitters increases about 15 mV and the J01 decreases by deep junction annealing even after the activation due to the reduced recombination in the emitter. However, for phosphorus emitters the implied Voc decreases from 622 mV to 560 mV and the J01 increases with deep junction annealing. This is due to the abrupt decrease in the bulk lifetime of the p-type wafer itself from 178 μs to 14 μs. PC1D simulation based on these results shows that, for p-type implanted solar cells, increasing the annealing temperature and time abruptly decreases the efficiency (Δηabs=−1.3%, while, for n-type implanted solar cells, deep junction annealing increases the efficiency and Voc, especially (Δηabs=+0.4% for backside emitter solar cells.

Allotropes of Phosphorus with Remarkable Stability and Intrinsic Piezoelectricity

Science.gov (United States)

Li, Zhenqing; He, Chaoyu; Ouyang, Tao; Zhang, Chunxiao; Tang, Chao; Römer, Rudolf A.; Zhong, Jianxin

2018-04-01

We construct a class of two-dimensional (2D) phosphorus allotropes by assembling a previously proposed ultrathin metastable phosphorus nanotube into planar structures in different stacking orientations. Based on first-principles methods, the structures, stabilities, and fundamental electronic properties of these allotropes are systematically investigated. Our results show that these 2D van der Waals phosphorene allotropes possess remarkable stabilities due to the strong intertube van der Waals interactions, which cause an energy release of about 30 - 70 meV /atom , depending on their stacking details. Most of them are confirmed to be energetically more favorable than the experimentally viable α -P and β -P . Three of them, showing a relatively higher probability of being synthesized in the future, are further confirmed to be dynamically stable semiconductors with strain-tunable band gaps and intrinsic piezoelectricity, which may have potential applications in nanosized sensors, piezotronics, and energy harvesting in portable electronic nanodevices.

Effects of He implantation on radiation induced segregation in Cu-Au and Ni-Si alloys

Science.gov (United States)

Iwase, A.; Rehn, L. E.; Baldo, P. M.; Funk, L.

Effects of He implantation on radiation induced segregation (RIS) in Cu-Au and Ni-Si alloys were investigated using in situ Rutherford backscattering spectrometry during simultaneous irradiation with 1.5-MeV He and low-energy (100 or 400-keV) He ions at elevated temperatures. RIS during single He ion irradiation, and the effects of pre-implantation with low-energy He ions, were also studied. RIS near the specimen surface, which was pronounced during 1.5-MeV He single-ion irradiation, was strongly reduced under low-energy He single-ion irradiation, and during simultaneous irradiation with 1.5-MeV He and low-energy He ions. A similar RIS reduction was also observed in the specimens pre-implanted with low-energy He ions. The experimental results indicate that the accumulated He atoms cause the formation of small bubbles, which provide additional recombination sites for freely migrating defects.

Evaluation of electron beam stabilization for ion implant processing

Science.gov (United States)

Buffat, Stephen J.; Kickel, Bee; Philipps, B.; Adams, J.; Ross, Matthew F.; Minter, Jason P.; Marlowe, Trey; Wong, Selmer S.

1999-06-01

With the integration of high energy ion implant processes into volume CMOS manufacturing, the need for thick resist stabilization to achieve a stable ion implant process is critical. With new photoresist characteristics, new implant end station characteristics arise. The resist outgassing needs to be addressed as well as the implant profile to ensure that the dosage is correct and the implant angle does not interfere with other underlying features. This study compares conventional deep-UV/thermal with electron beam stabilization. The electron beam system used in this study utilizes a flood electron source and is a non-thermal process. These stabilization techniques are applied to a MeV ion implant process in a CMOS production process flow.

Polymer tribology by combining ion implantation and radionuclide tracing

International Nuclear Information System (INIS)

Timmers, Heiko; Gladkis, Laura G.; Warner, Jacob A.; Byrne, Aidan P.; Grosso, Mariela F. del; Arbeitman, Claudia R.; Garcia-Bermudez, Gerardo; Geruschke, Thomas; Vianden, Reiner

2010-01-01

Radionuclide tracers were ion implanted with three different techniques into the ultra-high molecular weight polyethylene polymer. Tracer nuclei of 7 Be were produced with inverse kinematics via the reaction p( 7 Li, 7 Be)n and caught by polymer samples at a forward scattering angle with a maximum implantation energy of 16 MeV. For the first time, 97 Ru, 100 Pd, and, independently, 111 In have been used as radionuclide tracers in ultra-high molecular weight polyethylene. 97 Ru and 100 Pd were recoil-implanted following the fusion evaporation reactions 92 Zr( 12 C,α3n) 97 Ru and 92 Zr( 12 C,4n) 100 Pd with a maximum implantation energy of 8 MeV. 111 In ions were produced in an ion source, mass-separated and implanted at 160 keV. The tribology of implanted polymer samples was studied by tracing the radionuclide during mechanical wear. Uni-directional and bi-directional sliding apparatus with stainless steel actuators were used. Results suggest a debris exchange process as the characteristic feature of the wear-in phase. This process can establish the steady state required for a subsequently constant wear rate in agreement with Archard's equation. The nano-scale implantation of mass-separated 111 In appears best suited to the study of non-linear tribological processes during wear-in. Such non-linear processes may be expected to be important in micro- and nanomachines.

Hydrogen- and helium-implanted silicon: Low-temperature positron-lifetime studies

DEFF Research Database (Denmark)

Mäkinen, S.; Rajainmäki, H.; Linderoth, Søren

1991-01-01

High-purity single-crystal samples of float-zoned Si have been implanted with 6.95-MeV protons and with 25-MeV 3He2 ions at 15 K, and the positron-lifetime technique has been used to identify the defects created in the samples, and to study the effects of H and He on the annealing of point defects...... in Si. The results have been compared with those of proton-irradiated Si. A 100–300-K annealing stage was clearly observed in hydrogen (H+) -implanted Si, and this stage was almost identical to that in the p-irradiated Si. The final annealing state of the H+-implanted Si started at about 400 K......, and it is connected to annealing out of negatively charged divacancy-oxygen pairs. This stage was clearly longer than that for the p-irradiated Si, probably due to the breakup of Si-H bonds at about 550 K. The 100-K annealing stage was not seen with the He-implanted samples. This has been explained by assuming...

Doping of GaN by ion implantation: Does It Work?

International Nuclear Information System (INIS)

Suvkhanov, A.; Wu, W.; Price, K.; Parikh, N.; Irene, E.; Hunn, J.; Thomson, D.; Davis, R.F.; Krasnobaev, L.

1998-04-01

Epitaxially grown GaN by metal organic chemical vapor deposition (MOCVD) on SiC were implanted with 100 keV Si + (for n-type) and 80 keV Mg + (for p-type) with various fluences from 1 x 10 12 to 7 x 10 15 ions/cm 2 at liquid nitrogen temperature (LT), room temperature (RT), and 700 C (HT). High temperature (1,200 C and 1,500 C) annealing was carried out after capping the GaN with epitaxial AlN by MOCVD to study damage recovery. Samples were capped by a layer of AlN in order to protect the GaN surface during annealing. Effects of implant temperature, damage and dopant activation are critically studied to evaluate a role of ion implantation in doping of GaN. The damage was studied by Rutherford Backscattering/Channeling, spectroscopic ellipsometry and photoluminescence. Results show dependence of radiation damage level on temperature of the substrate during implantation: implantations at elevated temperatures up to 550 C decrease the lattice disorder; hot implants above 550 C can not be useful in doping of GaN due to nitrogen loss from the surface. SE measurements have indicated very high sensitivity to the implantation damage. PL measurements at LT of 80 keV Mg + (5 x 10 14 cm 2 ) implanted and annealed GaN showed two peaks: one ∼ 100 meV and another ∼ 140 meV away from the band edge

Evaluation of Uncertainties in the Determination of Phosphorus by RNAA

International Nuclear Information System (INIS)

Rick L. Paul

2000-01-01

A radiochemical neutron activation analysis (RNAA) procedure for the determination of phosphorus in metals and other materials has been developed and critically evaluated. Uncertainties evaluated as type A include those arising from measurement replication, yield determination, neutron self-shielding, irradiation geometry, measurement of the quantity for concentration normalization (sample mass, area, etc.), and analysis of standards. Uncertainties evaluated as type B include those arising from beta contamination corrections, beta decay curve fitting, and beta self-absorption corrections. The evaluation of uncertainties in the determination of phosphorus is illustrated for three different materials in Table I. The metal standard reference materials (SRMs) 2175 and 861 were analyzed for value assignment of phosphorus; implanted silicon was analyzed to evaluate the technique for certification of phosphorus. The most significant difference in the error evaluation of the three materials lies in the type B uncertainties. The relatively uncomplicated matrix of the high-purity silicon allows virtually complete purification of phosphorus from other beta emitters; hence, minimal contamination correction is needed. Furthermore, because the chemistry is less rigorous, the carrier yield is more reproducible, and self-absorption corrections are less significant. Improvements in the chemical purification procedures for phosphorus in complex matrices will decrease the type B uncertainties for all samples. Uncertainties in the determination of carrier yield, the most significant type A error in the analysis of the silicon, also need to be evaluated more rigorously and minimized in the future

Effect of He implantation on fracture behavior and microstructural evolution in F82H

Energy Technology Data Exchange (ETDEWEB)

Yabuuchi, Kiyohiro, E-mail: kiyohiro.yabuuchi@qse.tohoku.ac.jp [Department of Quantum Science and Energy Engineering, Tohoku University, 6-6-01-2, Aramaki-Aza-Aoba, Aobaku, Sendai, Miyagi 980-8579 (Japan); Sato, Kiminori; Nogami, Shuhei; Hasegawa, Akira [Department of Quantum Science and Energy Engineering, Tohoku University, 6-6-01-2, Aramaki-Aza-Aoba, Aobaku, Sendai, Miyagi 980-8579 (Japan); Ando, Masami; Tanigawa, Hiroyasu [Japan Atomic Energy Agency, 2-166, Oaza-Obuchi-Aza-Omotedate, Rokkasho-mura, Kamikita-gun, Aomori 039-3212 (Japan)

2014-12-15

Reduced-activation ferritic/martensitic steels (RAFMs) are the primary candidate structural materials for fusion reactor blanket components. He bubbles, which formed under 14 MeV neutron irradiation, is considered to cause some mechanical property changes. In a previous study, Hasegawa et al. investigated the fracture behavior using Charpy impact test of He implanted F82H by 50 MeV α-particles with cyclotron accelerator, and the ductile brittle transition temperature (DBTT) was increased and intergranular fracture (IGF) was observed. However, the cause of the IGF was not shown in the previous study. To clarify the cause of the IGF of the He implanted F82H by 50 MeV α-particles with cyclotron accelerator, the microstructure of the He implanted F82H was investigated. After Charpy impact test at 233 K, the brittle fracture surface of the He implanted specimen was observed by SEM and TEM. By SEM observation, grain boundary surface was clearly observed from the bottom of the notch to a depth of about 400 μm. This area correspond to the He implanted region. On the other hand, at unimplanted region, river pattern was observed and transgranular fracture occurred. TEM observation revealed the He bubbles agglomeration at dislocations, lath boundaries, and grain boundaries, and the coarsening of precipitates on grain boundaries. IGF of the He implanted F82H was caused by both He bubbles and coarsening precipitates.

P- and N-type implantation doping of GaN with Ca and O

International Nuclear Information System (INIS)

Zolper, J.C.; Wilson, R.G.; Pearton, S.J.

1996-01-01

III-N photonic devices have made great advances in recent years following the demonstration of doping of GaN p-type with Mg and n-type with Si. However, the deep ionization energy level of Mg in GaN (∼ 160 meV) limits the ionized of acceptors at room temperature to less than 1.0% of the substitutional Mg. With this in mind, the authors used ion implantation to characterize the ionization level of Ca in GaN since Ca had been suggested by Strite to be a shallow acceptor in GaN. Ca-implanted GaN converted from n-to-p type after a 1,100 C activation anneal. Variable temperature Hall measurements give an ionization level at 169 meV. Although this level is equivalent to that of Mg, Ca-implantation may have advantages (shallower projected range and less straggle for a given energy) than Mg for electronic devices. In particular, the authors report the first GaN device using ion implantation doping. This is a GaN junction field effect transistor (JFET) which employed Ca-implantation. A 1.7 microm JFET had a transconductance of 7 mS/mm, a saturation current at 0 V gate bias of 33 mA/mm, a f t of 2.7 GHz, and a f max of 9.4 GHz. O-implantation was also studied and shown to create a shallow donor level (∼ 25 meV) that is similar to Si. SIMS profiles of as-implanted and annealed samples showed no measurable redistribution of either Ca or O in GaN at 1,125 C

Raman microprobe measurements of stress in ion implanted materials

Energy Technology Data Exchange (ETDEWEB)

Nugent, K.W.; Prawer, S.; Weiser, P.S.; Dooley, S.P. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1993-12-31

Raman microprobe measurements of ion implanted diamond and silicon have shown significant shifts in the Raman line due to stresses in the materials. The Raman line shifts to higher energy if the stress is compressive and to lower energy for tensile stress{sup 1}. The silicon sample was implanted in a 60 {mu}m square with 2.56 x 10{sup 17} ions per square centimeter of 2 MeV Helium. This led to the formation of raised squares with the top 370mm above the original surface. In Raman studies of silicon using visible light, the depth of penetration of the laser beam into the sample is much less than one micron. It was found that the Raman line is due to the silicon overlying the damage region. The diamond sample was implanted with 2 x 10{sup 15} ions per square centimeter of 2.8 MeV carbon. It was concluded that the Raman spectrum could provide information concerning both the magnitude and the direction of stress in an ion implanted sample. It was possible in some cases to determine whether the stress direction is parallel or perpendicular to the sample surface. 1 refs., 2 figs.

Raman microprobe measurements of stress in ion implanted materials

Energy Technology Data Exchange (ETDEWEB)

Nugent, K W; Prawer, S; Weiser, P S; Dooley, S P [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1994-12-31

Raman microprobe measurements of ion implanted diamond and silicon have shown significant shifts in the Raman line due to stresses in the materials. The Raman line shifts to higher energy if the stress is compressive and to lower energy for tensile stress{sup 1}. The silicon sample was implanted in a 60 {mu}m square with 2.56 x 10{sup 17} ions per square centimeter of 2 MeV Helium. This led to the formation of raised squares with the top 370mm above the original surface. In Raman studies of silicon using visible light, the depth of penetration of the laser beam into the sample is much less than one micron. It was found that the Raman line is due to the silicon overlying the damage region. The diamond sample was implanted with 2 x 10{sup 15} ions per square centimeter of 2.8 MeV carbon. It was concluded that the Raman spectrum could provide information concerning both the magnitude and the direction of stress in an ion implanted sample. It was possible in some cases to determine whether the stress direction is parallel or perpendicular to the sample surface. 1 refs., 2 figs.

High current pelletron for ion implantation

International Nuclear Information System (INIS)

Schroeder, J.B.

1989-01-01

Since 1984, when the first production MeV ion implanter (an NEC model MV-T30) went on-line, interest in versatile electrostatic accelerator systems for MeV ion implantation has grown. The systems use a negative ion source to inject a tandem megavolt accelerator. In early systems the 0.4 mA of charging current from the two Pelletron charging chains in the accelerator was sufficient for the low intensity of beams from the ion source. This 2-chain system, however, is no longer adequate for the much higher beam intensities from today's improved ion sources. A 4-chain charging system, which delivers 1.3 mA to the high voltage terminal, was developed and is in operation in new models of NEC S Series Pelletron accelerators. This paper describes the latest beam performance of 1 MV and 1.7 MW Pelletron accelerators with this new 4-chain charging system. (orig.)

Characterization of junctions produced by medium-energy ion implantation in silicon; Caracterisation de jonctions obtenues par implantation d'ions de moyenne energie dans le silicium

Energy Technology Data Exchange (ETDEWEB)

Monfret, A [Commissariat a l' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires

1970-07-01

Characteristics of diodes made by implanting 20 keV boron and phosphorus ions into silicon are reviewed. Special features of theses diodes are presented, and correlation with technology is studied. This paper includes three parts: - in the first part, the theory of range distribution is considered for both amorphous and single-crystal targets, - In the second part, a brief description of the experimental conditions is given. - In the third part, the experimental results are presented. The results lead to a schematic model of the component. They also show the influence of cleaning and annealing treatments from which optimized process of fabrication can be determined. In this study, the influence of a two stage annealing process is shown. For phosphorus and boron implants, the first stage is performed at 150 deg. C while the second stage is 450 deg. C for phosphorus and 550 deg. C for boron implants. The implanted diodes are found to exhibit good electrical characteristics. Comparisons with standard diffused diodes are quite favourable. (author) [French] On examine les caracteristiques de diodes obtenues par implantation d'ions bore et phosphore de 20 keV dans le silicium. On met en evidence le comportement particulier de ces diodes et on presente certaines correlations avec la technologie. L'expose comprend trois parties: - la premiere partie est consacree au calcul du profil de dopage en mode canalise ou non. - Dans la deuxieme partie, on decrit l'appareillage et les conditions experimentales d'implantation. - Dans la troisieme partie, on presente les resultats experimentaux. On propose un modele schematique pour expliquer le comportement des tenues en tension des diodes. L'etude des courants de fuite en fonction de la preparation des echantillons et des traitements thermiques permet de determiner des conditions optimales d'elaboration. Au cours de cette etude on met en evidence l'influence de deux stades de recuit: le premier a 150 deg. C pour les implantations de

Photocarrier dynamics in monolayer phosphorene and bulk black phosphorus.

Science.gov (United States)

Zereshki, Peymon; Wei, Yaqing; Ceballos, Frank; Bellus, Matthew Z; Lane, Samuel D; Pan, Shudi; Long, Run; Zhao, Hui

2018-06-13

We report a combined theoretical and experimental study on photocarrier dynamics in monolayer phosphorene and bulk black phosphorus. Samples of monolayer phosphorene and bulk black phosphorus were fabricated by mechanical exfoliation, identified according to their reflective contrasts, and protected by covering them with hexagonal boron nitride layers. Photocarrier dynamics in these samples was studied by an ultrafast pump-probe technique. The photocarrier lifetime of monolayer phosphorene was found to be about 700 ps, which is about 9 times longer than that of bulk black phosphorus. This trend was reproduced in our calculations based on ab initio nonadiabatic molecular dynamics combined with time-domain density functional theory in the Kohn-Sham representation, and can be attributed to the smaller bandgap and stronger nonadiabatic coupling in bulk. The transient absorption response was also found to be dependent on the sample orientation with respect to the pump polarization, which is consistent with the previously reported anisotropic absorption of phosphorene. In addition, an oscillating component of the differential reflection signal at early probe delays was observed in the bulk sample and was attributed to the layer-breathing phonon mode with an energy of about 1 meV and a decay time of about 1.35 ps. These results provide valuable information for application of monolayer phosphorene in optoelectronics.

TEM investigation of the microstructural evolution in nickel during MeV helium implantation

International Nuclear Information System (INIS)

Gadalla, A.A.; Jaeger, W.; Ehrhart, P.

1986-01-01

In a recent TEM investigation of high energy He-implanted copper the low average helium density could be understood by the observation of the coexistence of two types of vacancy agglomerates i.e. relaxed vacancy agglomerates in the form of stacking fault tetrahedra (SFT) and small bubbles. In order to arrive at a more systematic understanding of the evolution of the microstructure during high energy helium implantation we extended these TEM investigations to nickel. Of particular interest was also the minimum implantation dose necessary to precipitate bubbles that are large enough to be visible in the TEM. (orig./RK)

Scaling of ion implanted Si:P single electron devices

International Nuclear Information System (INIS)

Escott, C C; Hudson, F E; Chan, V C; Petersson, K D; Clark, R G; Dzurak, A S

2007-01-01

We present a modelling study on the scaling prospects for phosphorus in silicon (Si:P) single electron devices using readily available commercial and free-to-use software. The devices comprise phosphorus ion implanted, metallically doped (n + ) dots (size range 50-500 nm) with source and drain reservoirs. Modelling results are compared to measurements on fabricated devices and discussed in the context of scaling down to few-electron structures. Given current fabrication constraints, we find that devices with 70-75 donors per dot should be realizable. We comment on methods for further reducing this number

Scaling of ion implanted Si:P single electron devices

Energy Technology Data Exchange (ETDEWEB)

Escott, C C [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Hudson, F E [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Chan, V C [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Petersson, K D [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Clark, R G [Centre for Quantum Computer Technology, School of Physics, UNSW, Sydney, 2052 (Australia); Dzurak, A S [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia)

2007-06-13

We present a modelling study on the scaling prospects for phosphorus in silicon (Si:P) single electron devices using readily available commercial and free-to-use software. The devices comprise phosphorus ion implanted, metallically doped (n{sup +}) dots (size range 50-500 nm) with source and drain reservoirs. Modelling results are compared to measurements on fabricated devices and discussed in the context of scaling down to few-electron structures. Given current fabrication constraints, we find that devices with 70-75 donors per dot should be realizable. We comment on methods for further reducing this number.

Highly-focused boron implantation in diamond and imaging using the nuclear reaction {sup 11}B(p, α){sup 8}Be

Energy Technology Data Exchange (ETDEWEB)

Ynsa, M.D., E-mail: m.ynsa@uam.es [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física Aplicada, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Ramos, M.A. [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física de la Materia Condensada and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Skukan, N. [Laboratory for Ion Beam Interactions, Ruđer Bošković Institute, Bijenička 54, HR-10000 Zagreb (Croatia); Torres-Costa, V. [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física Aplicada, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Jakšić, M. [Laboratory for Ion Beam Interactions, Ruđer Bošković Institute, Bijenička 54, HR-10000 Zagreb (Croatia)

2015-04-01

Diamond is an especially attractive material because of its gemological value as well as its unique mechanical, chemical and physical properties. One of these properties is that boron-doped diamond is an electrically p-type semiconducting material at practically any boron concentration. This property makes it possible to use diamonds for multiple industrial and technological applications. Boron can be incorporated into pure diamond by different techniques including ion implantation. Although typical energies used to dope diamond by ion implantation are about 100 keV, implantations have also been performed with energies above MeV. In this work CMAM microbeam setup has been used to demonstrate capability to implant boron with high energies. An 8 MeV boron beam with a size of about 5 × 3 μm{sup 2} and a beam current higher than 500 pA has been employed while controlling the beam position and fluence at all irradiated areas. The subsequent mapping of the implanted boron in diamond has been obtained using the strong and broad nuclear reaction {sup 11}B(p, α){sup 8}Be at E{sub p} = 660 keV. This reaction has a high Q-value (8.59 MeV for α{sub 0} and 5.68 MeV for α{sub 1}) and thus is almost interference-free. The sensitivity of the technique is studied in this work.

Implantation of β-emitters on biomedical implants: 32 P isotropic ion implantation using a coaxial plasma reactor

International Nuclear Information System (INIS)

Fortin, M.A.; Paynter, R.W.; Sarkissian, A.; Stansfield, B.L.; Terreault, B.; Dufresne, V.

2003-01-01

The development of endovascular brachytherapy and the treatment of certain types of cancers (liver, lung, prostate) often require the use of beta-emitters, sometimes in the form of radioisotope-implanted devices. Among the most commonly used isotopes figures 32 P, a pure beta-emitter (maximum energy: 1.7 MeV), of which the path in biological tissues is of a few cm, restricting the impact of electron bombardment to the immediate environment of the implant. Several techniques and processes have been tried to elaborate surfaces and devices showing strongly bonded, or implanted 32 P. Anodizing, vapor phase deposition, grafting of oligonucleotides, as well as ion implantation processes have been investigated by several research groups as methods to implant beta-radioisotopes into surfaces. A coaxial plasma reactor was developed at INRS to implant radioisotopes into cylindrical metallic objects, such as coronary stents commonly used in angioplasty procedures. The dispersion of 32 P atoms on the interior surfaces of the chamber can be investigated using radiographs, contributing to image the plasma ion transport mechanisms that guide the efficiency of the implantation procedure. The amount of radioactivity on the wall liner, on the internal components, and on the biomedical implants are quantified using a surface barrier detector. A comparative study establishes a relationship between the gray scale of the radiographs, and dose measurements. A program was developed to convert the digitized images into maps showing surface dose density in mCi/cm 2 . An integration process allows the quantification of the doses on the walls and components of the reactor. Finally, the resulting integral of the 32 P dose is correlated to the initial amount of radioactivity inserted inside the implanter before the dismantling procedure. This method could be introduced as a fast and reliable way to test, qualify and assess the amount of radioactivity present on the as-produced implants

Muonium states and dynamics in phosphorus and sulphur

International Nuclear Information System (INIS)

Cox, S.F.J.; Cottrell, S.P.; Hopkins, G.A.; Kay, M.; Pratt, F.L.

1997-01-01

The various states formed by positive muons implanted into phosphorus and sulphur have been characterized as a model for interstitial hydrogen, of which little is known in these elements. Repolarization studies reveal muonium-like states in each case, giving estimates of the hyperfine parameters and, for sulphur at least, an indication of the coexistence of a molecular radical state. The longitudinal-field relaxation functions suggest conversion of the paramagnetic states to diamagnetic, i.e. ionization or chemical reaction, in competition with strong spin-lattice relaxation

Spin properties of black phosphorus and phosphorene, and their prospects for spincalorics

Science.gov (United States)

Kurpas, Marcin; Gmitra, Martin; Fabian, Jaroslav

2018-05-01

Semiconducting black phosphorus attracts a lot of attention due to its extraordinary electronic properties. Its application to spincalorics requires the knowledge about the spin and thermal properties. Here, we describe first principles calculations of the spin–orbit coupling and spin scattering in phosphorene and bulk black phosphorus. We find that the intrinsic spin–orbit coupling is of the order of 20 meV for the valence and conduction band, both for phosphorene and bulk black phosphorus, and induces spin mixing with the probability b2 ≈ 10-5 –10‑4. A strong anisotropy of b 2 is observed. The calculated Elliott–Yafet spin relaxation times reach nanoseconds for realistic values of the momentum relaxation times. The extrinsic spin–orbit coupling, enabling the D’yakonov–Perel’ spin relaxation mechanism, is studied for phosphorene by application of a transverse electric field. We observe a strong anisotropy of the extrinsic effects for the valence band and much weaker for the conduction band. It is shown, that for small enough electric fields the spin relaxation is dominated by the Elliott–Yafet mechanism, while the D’yakonov–Perel’ matters for higher electric fields. Our theoretical results stay in a good agreement with the experimental findings, and indicates that long spin lifetimes in black phosphorus and phosphorene makes them prospective materials for spincalorics and spintronics.

Thin hydroxyapatite surface layers on titanium produced by ion implantation

CERN Document Server

Baumann, H; Bilger, G; Jones, D; Symietz, I

2002-01-01

In medicine metallic implants are widely used as hip replacement protheses or artificial teeth. The biocompatibility is in all cases the most important requirement. Hydroxyapatite (HAp) is frequently used as coating on metallic implants because of its high acceptance by the human body. In this paper a process is described by which a HAp surface layer is produced by ion implantation with a continuous transition to the bulk material. Calcium and phosphorus ions are successively implanted into titanium under different vacuum conditions by backfilling oxygen into the implantation chamber. Afterwards the implanted samples are thermally treated. The elemental composition inside the implanted region was determined by nuclear analysis methods as (alpha,alpha) backscattering and the resonant nuclear reaction sup 1 H( sup 1 sup 5 N,alpha gamma) sup 1 sup 2 C. The results of X-ray photoelectron spectroscopy indicate the formation of HAp. In addition a first biocompatibility test was performed to compare the growing of m...

Influence of the growth-surface on the incorporation of phosphorus in SiC

International Nuclear Information System (INIS)

Rauls, E.; Gerstmann, U.; Frauenheim, Th.

2005-01-01

Phosphorus is a common and desired n-type dopant of SiC, but it turned out that doping by diffusion or during growth is rarely successful. To avoid the efforts and the creation of damage if ion implantation is used instead, these techniques were, though, highly desirable. In this work, we have investigated theoretically the experimental observation that phosphorus obviously hardly diffuses into the material. Not the diffusivity of the dopant but its addiction to occupy a three-fold coordinated surface site are critical, together with the way the surface affects the bulk migration barriers of the dopants. Whereas the most common growth direction for 4H-SiC, the polar silicon terminated (0001) surface, seems to be least appropriate for the incorporation of phosphorus atoms, growth along the nonpolar [112-bar 0] provides a good possibility to achieve efficient P-doping during growth

Implantation of 111In in NTDSi by heavy ion recoil technique

International Nuclear Information System (INIS)

Thakare, S.V.; Tomar, B.S.

1998-01-01

Heavy ion recoil implantation technique has been used to implant 111 In in n-type silicon using medium energy heavy ion accelerator Pelletron, at TIFR, Colaba, Mumbai. The nuclear reaction used for this purpose was 109 Ag( 7 Li,p4n) 111 In. The beam energy was optimised to be 50 MeV for maximum concentration of the implanted probe atoms. The gamma-ray spectrum of the implanted sample after 24 hours was found to contain only 171 and 245 keV gamma rays of 111 In. The penetration depth of ion is increased to 1.6 μm by heavy ion recoil implantation technique as compared to 0.16 μm with the conventional ion implantation technique. (author)

Determination of phosphorus and potassium in sugar cane leaves by 14 MeV neutrons

International Nuclear Information System (INIS)

Diaz, R.A.; Nagy, A.Z.; Bakos, L.; Soria, J.C.

1979-04-01

The possibilities of N, P, K evaluation in samples of sugar cane leaves were discussed. A method for determining P and K content in this samples by 14 MeV neutron activation analysis is described. Corrections for K and Si were taken into account. The limit of detection for P was 0.1 mg and for K it was 4 mg. The precision for P and K was 10% in agreement with the values given by other authors. (author)

The influence of nitrogen implantation on the electrical properties of amorphous IGZO

Science.gov (United States)

Zhan, S. L.; Zhao, M.; Zhuang, D. M.; Fu, E. G.; Cao, M. J.; Guo, L.; Ouyang, L. Q.

2017-09-01

In this study, nitrogen (N) implantation was adopted to regulate the carrier concentration and the Hall mobility of amorphous Indium Gallium Zinc Oxide (a-IGZO) films. The Hall Effect measurement demonstrates that the increase of implantation fluence can decrease the carrier concentration of a-IGZO by three orders to 1016 cm-3, which attributes to the reduction of oxygen defects. The addition of nitrogen atoms can result in the increase of Hall mobility to 9.93 cm2/V s with the subsequent decrease to 6.49 cm2/V s, which reflects the reduction of the average potential barrier height (φ0) to be 22.0 meV with subsequent increase to 74.8 meV in the modified percolation model. The results indicate that nitrogen can serve as an effective p-type dopants and oxygen defect suppressors. N-implantation with an appropriate fluence can effectively improve the Hall mobility and reduce the carrier concentration simultaneously.

Critical issues in the formation of quantum computer test structures by ion implantation

Energy Technology Data Exchange (ETDEWEB)

Schenkel, T.; Lo, C. C.; Weis, C. D.; Schuh, A.; Persaud, A.; Bokor, J.

2009-04-06

The formation of quantum computer test structures in silicon by ion implantation enables the characterization of spin readout mechanisms with ensembles of dopant atoms and the development of single atom devices. We briefly review recent results in the characterization of spin dependent transport and single ion doping and then discuss the diffusion and segregation behaviour of phosphorus, antimony and bismuth ions from low fluence, low energy implantations as characterized through depth profiling by secondary ion mass spectrometry (SIMS). Both phosphorus and bismuth are found to segregate to the SiO2/Si interface during activation anneals, while antimony diffusion is found to be minimal. An effect of the ion charge state on the range of antimony ions, 121Sb25+, in SiO2/Si is also discussed.

[Effects of phosphorus sources on phosphorus fractions in rhizosphere soil of wild barley genotypes with high phosphorus utilization efficiency].

Science.gov (United States)

Cai, Qiu-Yan; Zhang, Xi-Zhou; Li, Ting-Xuan; Chen, Guang-Deng

2014-11-01

High P-efficiency (IS-22-30, IS-22-25) and low P-efficiency (IS-07-07) wild barley cultivars were chosen to evaluate characteristics of phosphorus uptake and utilization, and properties of phosphorus fractions in rhizosphere and non-rhizosphere in a pot experiment with 0 (CK) and 30 mg P · kg(-1) supplied as only Pi (KH2PO4), only Po (phytate) or Pi + Po (KH2PO4+ phytate). The results showed that dry matter and phosphorus accumulation of wild barley in the different treatments was ranked as Pi > Pi + Po > Po > CK. In addition, dry matter yield and phosphorus uptake of wild barley with high P-efficiency exhibited significantly greater than that with low P-efficiency. The concentration of soil available phosphorus was significantly different after application of different phosphorus sources, which was presented as Pi > Pi + Po > Po. The concentration of soil available phosphorus in high P-efficiency wild barley was significantly higher than that of low P-efficiency in the rhizosphere soil. There was a deficit in rhizosphere available phosphorus of high P-efficiency wild barley, especially in Pi and Pi+Po treatments. The inorganic phosphorus fractions increased with the increasing Pi treatment, and the concentrations of inorganic phosphorus fractions in soil were sorted as follows: Ca10-P > O-P > Fe-P > Al-P > Ca2-P > Ca8-P. The contents of Ca2-P and Ca8-P for high P-efficiency wild barley showed deficits in rhizosphere soil under each phosphorus source treatment. In addition, enrichment of Al-P and Fe-P was observed in Pi treatment in rhizosphere soil. The concentrations of organic phosphorus fractions in soil were sorted as follows: moderate labile organic phosphorus > moderate resistant, resistant organic phosphorus > labile organic phosphorus. The labile and moderate labile organic phosphorus enriched in rhizosphere soil and the greatest enrichment appeared in Pi treatment. Furthermore, the concentrations of moderate resistant organic phosphorus and resistant

Application of neutron activation analysis for the determination of implantation profiles of phosphorus in semiconductor grade silicon

International Nuclear Information System (INIS)

Jaskolska, H.; Rowinska, L.; Walis, L.

1977-01-01

A method for the determination of concentration profiles of phosphorus in silicon by neutron activation has been elaborated. It is based on the previously described extraction methods, in which phosphorus is extracted as phosphomolybdic complex with isoamyl alcohol. It was suitably modified and Au and Ta holdback carriers were used in order to diminish the extraction of these elements together with phosphorus. The method permits to achieve decontamination factors of 10 2 -10 3 for the elements found in the Si plates examined. The yield of phosphorus separation is nearly constant and amounts to 84%. Layers are removed from the annealed plate by anodic oxidation and by dissolving the oxide formed on the surface in diluted hydrofluoric acid. The thickness of the removed layers is determined from previously prepared calibration curves. The lower limit of determination is of the order 10 -11 g P. Two groups of errors have been discussed. The suitability of autoradiography to the determination of concentration profiles has been demonstrated. Some applications of the method are suggested. (T.G.)

Preparation of phosphorus targets using the compound phosphorus nitride

International Nuclear Information System (INIS)

Maier-Komor, P.

1987-01-01

Commercially available phosphorus nitride (P 3 N 5 ) shows a high oxygen content. Nevertheless, this material is attractive for use as phosphorus targets in experiments where red phosphorus would disappear due to its high vapor pressure and where a metal partner in the phosphide must be excluded due to its high atomic number. Methods are described to produce phosphorus nitride targets by vacuum evaporation condensation. (orig.)

Double crystal X-ray analysis of phosphorus precipitation in supersaturated Si-P solid solutions

International Nuclear Information System (INIS)

Servidori, M.; Zini, Q.; Dal Monte, C.

1983-01-01

The physical nature of the electrically inactive phosphorus in silicon is investigated by double crystal X-ray diffraction measurements. This analysis is performed on laser annealed supersaturated samples, doped by ion implantation up to 5 x 10 21 cm -3 . After isothermal heat treatments, these solid solutions show marked reductions in the electrically active phosphorus concentration. In particular, 850 0 C heatings give rise to a carrier concentration which corresponds to the phosphorus solubility in equilibrium with the inactive dopant. This dopant is characterized by means of lattice strain measurements: they are found consistent with the presence of perfectly coherent cubic SiP precipitates. This result is in agreement with the one obtained in preceeding works by electrical measurements and transmission electron microscopy observations and contradicts the hypothesis that the excess dopant atoms are, at least in part, charged point defects (E-centres). (author)

Characterization of 2 MeV, 4 MeV, 6 MeV and 18 MeV buildup caps for use with a 0.6 cubic centimeter thimble ionization chamber

International Nuclear Information System (INIS)

Salyer, R.L.; VanDenburg, J.W.; Prinja, A.K.; Kirby, T.; Busch, R.; Hong-Nian Jow

1996-07-01

The purpose of this research is to characterize existing 2 MeV, 4 MeV and 6 MeV buildup caps, and to determine if a buildup cap can be made for the 0.6 cm 3 thimble ionization chamber that will accurately measure exposures in a high-energy photon radiation field. Two different radiation transport codes were used to computationally characterize existing 2 MeV, 4 MeV, and 6 MeV buildup caps for a 0.6 cm 3 active volume thimble ionization chamber: ITS, The Integrated TIGER Series of Coupled Electron-Photon Monte Carlo Transport Codes; and CEPXS/ONEDANT, A One-Dimensional Coupled Electron-Photon Discrete Ordinates Code Package. These codes were also used to determine the design characteristics of a buildup cap for use in the 18 MeV photon beam produced by the 14 TW pulsed power HERMES-III electron accelerator. The maximum range of the secondary electron, the depth at which maximum dose occurs, and the point where dose and collision kerma are equal have been determined to establish the validity of electronic equilibrium. The ionization chamber with the appropriate buildup cap was then subjected to a 4 MeV and a 6 MeV bremmstrahlung radiation spectrum to determine the detector response

A simple method to produce quasi-simultaneous multiple energy helium implantation

International Nuclear Information System (INIS)

Paszti, F.; Fried, M.; Manuaba, A.; Mezey, G.; Kotai, E.; Lohner, T.

1982-11-01

If a monoenergetic ion beam is bombarding a target through an absorber foil tilted continuously (i.e. its effective thickness changing continuously), the depth distribution of the implanted ions in the sample depends on the way the absorber is moving. The present paper describes a way of absorber tilting for obtaining a uniform depth distribution and its experimental verification in the case of MeV energy helium ions implanted into aluminium target. (author)

Sustainable Phosphorus Measures: Strategies and Technologies for Achieving Phosphorus Security

Directory of Open Access Journals (Sweden)

Stuart White

2013-01-01

Full Text Available Phosphorus underpins the world’s food systems by ensuring soil fertility, maximising crop yields, supporting farmer livelihoods and ultimately food security. Yet increasing concerns around long-term availability and accessibility of the world’s main source of phosphorus—phosphate rock, means there is a need to investigate sustainable measures to buffer the world’s food systems against the long and short-term impacts of global phosphorus scarcity. While the timeline of phosphorus scarcity is contested, there is consensus that more efficient use and recycling of phosphorus is required. While the agricultural sector will be crucial in achieving this, sustainable phosphorus measures in sectors upstream and downstream of agriculture from mine to fork will also need to be addressed. This paper presents a comprehensive classification of all potential phosphorus supply- and demand-side measures to meet long-term phosphorus needs for food production. Examples range from increasing efficiency in the agricultural and mining sector, to technologies for recovering phosphorus from urine and food waste. Such measures are often undertaken in isolation from one another rather than linked in an integrated strategy. This integrated approach will enable scientists and policy-makers to take a systematic approach when identifying potential sustainable phosphorus measures. If a systematic approach is not taken, there is a risk of inappropriate investment in research and implementation of technologies and that will not ultimately ensure sufficient access to phosphorus to produce food in the future. The paper concludes by introducing a framework to assess and compare sustainable phosphorus measures and to determine the least cost options in a given context.

Simultaneous determination of nitrogen and phosphorus in cereals using 14 MeV Neutron Activation Analysis

International Nuclear Information System (INIS)

Bejarano, R.

1992-01-01

A method using 14 MeV neutron activation analysis was developed form non-destructive simultaneous determination of N and P in cereals. The samples were irradiated 5 min. after 0,5 min. decay time. The induced activities were measured using gamma spectrometry with Nal(Tl) well type detector. The accuracy, precision and detection limits obtained are discussed as well as the analytical results for different types of cereals. (Author) 10 refs., 8 tab., 1 fig

Synchrotron Topographic and Diffractometer Studies of Buried Layered Structures Obtained by Implantation with Swift Heavy Ions in Silicon Single Crystals

International Nuclear Information System (INIS)

Wierzchowski, W.; Wieteska, K.; Zymierska, D.; Graeff, W.; Czosnyka, T.; Choinski, J.

2006-01-01

A distribution of crystallographic defects and deformation in silicon crystals subjected to deep implantation (20-50 μm) with ions of the energy of a few MeV/amu is studied. Three different buried layered structures (single layer, binary buried structure and triple buried structure) were obtained by implantation of silicon single crystals with 184 MeV argon ions, 29.7 MeV boron ions, and 140 MeV argon ions, each implantation at a fluency of 1x10 14 ions cm -2 . The implanted samples were examined by means of white beam X-ray section and projection topography, monochromatic beam topography and by recording local rocking curves with the beam restricted to 50 x 50 μm 2 . The experiment pointed to a very low level of implantation-induced strain (below 10 -5 ). The white beam Bragg case section experiment revealed a layer producing district black contrast located at a depth of the expected mean ion range. The presence of these buried layered structures in studied silicon crystals strongly affected the fringe pattern caused by curvature of the samples. In case of white beam projection and monochromatic beam topographs the implanted areas were revealed as darker regions with a very tiny grain like structure. One may interpret these results as the effect of considerable heating causing annihilation of point defects and formation of dislocation loops connected with point defect clusters. (author)

Helium implanted RAFM steels studied by positron beam Doppler Broadening and Thermal Desorption Spectroscopy

International Nuclear Information System (INIS)

Carvalho, I; Schut, H; Fedorov, A; Luzginova, N; Desgardin, P; Sietsma, J

2013-01-01

Reduced Activation Ferritic/Martensitic steels are being extensively studied because of their foreseen application in fusion and Generation IV fission reactors. To mimic neutron irradiation conditions, Eurofer97 samples were implanted with helium ions at energies of 500 keV and 2 MeV and doses of 5x10 15 -10 16 He /cm 2 , creating atomic displacements in the range 0.07–0.08 dpa. The implantation induced defects were characterized by positron beam Doppler Broadening (DB) and Thermal Desorption Spectroscopy (TDS). The DB data could be fitted with one or two layers of material, depending on the He implantation energy. The S and W values obtained for the implanted regions suggest the presence of not only vacancy clusters but also positron traps of the type present in a sub-surface region found on the reference sample. The traps found in the implanted layers are expected to be He n V m clusters. For the 2 MeV, 10 16 He/cm 2 implanted sample, three temperature regions can be observed in the TDS data. Peaks below 450 K can be ascribed to He released from vacancies in the neighbourhood of the surface, the phase transition is found at 1180 K and the peak at 1350 K is likely caused by the migration of bubbles.

Microstructure evolution in carbon-ion implanted sapphire

International Nuclear Information System (INIS)

Orwa, J. O.; McCallum, J. C.; Jamieson, D. N.; Prawer, S.; Peng, J. L.; Rubanov, S.

2010-01-01

Carbon ions of MeV energy were implanted into sapphire to fluences of 1x10 17 or 2x10 17 cm -2 and thermally annealed in forming gas (4% H in Ar) for 1 h. Secondary ion mass spectroscopy results obtained from the lower dose implant showed retention of implanted carbon and accumulation of H near the end of range in the C implanted and annealed sample. Three distinct regions were identified by transmission electron microscopy of the implanted region in the higher dose implant. First, in the near surface region, was a low damage region (L 1 ) composed of crystalline sapphire and a high density of plateletlike defects. Underneath this was a thin, highly damaged and amorphized region (L 2 ) near the end of range in which a mixture of i-carbon and nanodiamond phases are present. Finally, there was a pristine, undamaged sapphire region (L 3 ) beyond the end of range. In the annealed sample some evidence of the presence of diamond nanoclusters was found deep within the implanted layer near the projected range of the C ions. These results are compared with our previous work on carbon implanted quartz in which nanodiamond phases were formed only a few tens of nanometers from the surface, a considerable distance from the projected range of the ions, suggesting that significant out diffusion of the implanted carbon had occurred.

High energy iron ion implantation into sapphire

International Nuclear Information System (INIS)

Allen, W.R.; Pedraza, D.F.

1990-01-01

Sapphire specimens of c-axis orientation were implanted at room temperature with iron ions at energies of 1.2 and of 2 MeV to various fluences up to 8 x 10 16 cm -2 . The damage induced by the implantations was assessed by Rutherford backscattering spectroscopy in random and channeling geometries. Dechanneling in both sublattices was observed to saturate for all implantation conditions. Disorder in the aluminum sublattice was found to increase with depth at a significantly slower rate than in the oxygen sublattice. In the oxygen sublattice, a relative yield, χ, of 0.80 ± 0.11 was attained at a depth of 0.1 μm and remained constant up to the measured depth of 0.45 μm. In the aluminum sublattice, the disorder increased with depth and the dechanneling asymptotically approached χ =0.70 ± 0.04 at 0.45 μm. These results are discussed and compared with those for shallower Fe implantations obtained by other researchers

Formation of cBN nanocrystals by He+ implantations of hBN

OpenAIRE

Machaka, Ronald; Erasmus, Rudolph M; Derry, Trevor E

2010-01-01

The structural modifications of polycrystalline hexagonal boron nitride implanted with He+ ion beams at energies between 200 keV and 1.2 MeV to fluences of 1.0 \\times 1017 ions \\cdot cm-2 were investigated using micro-Raman spectroscopy. The measured Raman spectra show evidence of implantation-induced structural transformations from the hexagonal phase to nanocrystalline cubic boron nitride, rhombohedral boron nitride and amorphous boron nitride phases. The first-order Longitudinal-Optical cB...

Buried injector logic, a vertical IIL using deep ion implantation

NARCIS (Netherlands)

Mouthaan, A.J.

1987-01-01

A vertically integrated alternative for integrated injection logic has been realized, named buried injector logic (BIL). 1 MeV ion implantations are used to create buried layers. The vertical pnp and npn transistors have thin base regions and exhibit a limited charge accumulation if a gate is

PIXE microbeam analysis of the metallic debris release around endosseous implants

International Nuclear Information System (INIS)

Buso, G.P.; Galassini, S.; Moschini, G.; Passi, P.; Zadro, A.; Uzunov, N.M.; Doyle, B.L.; Rossi, P.; Provencio, P.

2005-01-01

The mechanical friction that occurs during the surgical insertion of endosseous implants, both in dentistry and orthopaedics, may cause the detachment of metal debris which are dislodged into the peri-implant tissues and can lead to adverse clinical effects. This phenomenon more likely happens with coated or roughened implants that are the most widely employed. In the present study were studied dental implants screws made of commercially pure titanium and coated using titanium plasma-spray (TPS) technique. The implants were inserted in the tibia of rabbits, and removed 'en bloc' with the surrounding bone after one month. After proper processing and mounting on plastic holders, samples from bones were analysed by EDXRF setup at of National Laboratories of Legnaro, INFN, Italy, and consequently at 3 MeV proton microbeam setup at Sandia National Laboratories. Elemental maps were drawn, showing some occasional presence of metal particles in the peri-implant bone

Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization

Science.gov (United States)

Erich, M.; Kokkoris, M.; Fazinić, S.; Petrović, S.

2018-02-01

This work reports on the induced diamond crystal amorphization by 4 MeV carbon ions implanted in the 〈1 0 0〉 oriented crystal and its determination by application of RBS/C and EBS/C techniques. The spectra from the implanted samples were recorded for 1.2, 1.5, 1.75 and 1.9 MeV protons. For the two latter ones the strong resonance of the nuclear elastic scattering 12C(p,p0)12C at 1.737 MeV was explored. The backscattering channeling spectra were successfully fitted and the ion beam induced crystal amorphization depth profile was determined using a phenomenological approach, which is based on the properly defined Gompertz type dechanneling functions for protons in the 〈1 0 0〉 diamond crystal channels and the introduction of the concept of ion beam amorphization, which is implemented through our newly developed computer code CSIM.

Ion implantation for semiconductors

International Nuclear Information System (INIS)

Grey-Morgan, T.

1995-01-01

Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

Planar transistors and impatt diodes with ion implantation

International Nuclear Information System (INIS)

Dorendorf, H.; Glawischnig, H.; Grasser, L.; Hammerschmitt, J.

1975-03-01

Low frequency planar npn and pnp transistors have been developed in which the base and emitter have been fabricated using ion implantation of boron and phosphorus by a drive-in diffusion. Electrical parameters of the transistors are comparable with conventionally produced transistors; the noise figure was improved and production tolerances were significantly reduced. Silicon-impatt diodes for the microwave range were also fabricated with implanted pn junctions and tested for their high frequency characteristics. These diodes, made in an improved upside down technology, delivered output power up to 40 mW (burn out power) at 30 GHz. Reverse leakage current and current carrying capability of these diodes were comparable to diffused structures. (orig.) 891 ORU 892 MB [de

Damage and in-situ annealing during ion implantation

International Nuclear Information System (INIS)

Sadana, D.K.; Washburn, J.; Byrne, P.F.; Cheung, N.W.

1982-11-01

Formation of amorphous (α) layers in Si during ion implantation in the energy range 100 keV-11 MeV and temperature range liquid nitrogen (LN)-100 0 C has been investigated. Cross-sectional transmission electron microscopy (XTEM) shows that buried amorphous layers can be created for both room temperature (RT) and LN temperature implants, with a wider 100 percent amorphous region for the LN cooled case. The relative narrowing of the α layer during RT implantation is attributed to in-situ annealing. Implantation to the same fluence at temperatures above 100 0 C does not produce α layers. To further investigate in situ annealing effects, specimens already containing buried α layers were further irradiated with ion beams in the temperature range RT-400 0 C. It was found that isolated small α zones (less than or equal to 50 diameter) embedded in the crystalline matrix near the two α/c interfaces dissolved into the crystal but the thickness of the 100 percent α layer was not appreciably affected by further implantation at 200 0 C. A model for in situ annealing during implantation is presented

Anomalous heat evolution of deuteron implanted Al on electron bombardment

International Nuclear Information System (INIS)

Kamada, K.; Kinoshita, H.; Takahashi, H.

1994-05-01

Anomalous heat evolution was observed in deuteron implanted Al foils on 175 keV electron bombardment. Local regions with linear dimension of several 100nm showed simultaneous transformation from single crystalline to polycrystalline structure instantaneously on the electron bombardment, indicating the temperature rise up to more than melting point of Al from room temperature. The amount of energy evolved was more than 180 MeV for each transformed region. The transformation was never observed in proton implanted Al foils. The heat evolution was considered due to a nuclear reaction in D 2 molecular collections. (author)

Studies of ion implanted thermally oxidised chromium

International Nuclear Information System (INIS)

Muhl, S.

1977-01-01

The thermal oxidation of 99.99% pure chromium containing precise amounts of foreign elements has been studied and compared to the oxidation of pure chromium. Thirty-three foreign elements including all of the naturally occurring rare earth metals were ion implanted into chromium samples prior to oxidation at 750 0 C in oxygen. The role of radiation induced damage, inherent in this doping technique, has been studied by chromium implantations at various energies and doses. The repair of the damage has been studied by vacuum annealing at temperatures up to 800 0 C prior to oxidation. Many of the implants caused an inhibition of oxidation, the greatest being a 93% reduction for 2 x 10 16 ions/cm 2 of praseodymium. The distribution of the implant was investigated by the use of 2 MeV alpha backscattering and ion microprobe analysis. Differences in the topography and structure of the chromic oxide on and off the implanted area were studied using scanning electron and optical microscopy. X-ray diffraction analysis was used to investigate if a rare earth-chromium compound of a perovskite-type structure had been formed. Lastly, the electrical conductivity of chromic oxide on and off the implanted region was examined at low voltages. (author)

Hydrogen interstitial in H-ion implanted ZnO bulk single crystals: Evaluation by elastic recoil detection analysis and electron paramagnetic resonance

Energy Technology Data Exchange (ETDEWEB)

Kaida, T.; Kamioka, K.; Nishimura, T. [College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184-8584 (Japan); Kuriyama, K., E-mail: kuri@ionbeam.hosei.ac.jp [College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Department of Arts and Sciences, Osaka Kyoiku University, Kashiwara, Osaka 582-8582 (Japan); Kinomura, A. [National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

2015-12-15

The origins of low resistivity in H ion-implanted ZnO bulk single crystals are evaluated by elastic recoil detection analysis (ERDA), electron paramagnetic resonance (EPR), and Van der Pauw methods. The H-ion implantation (peak concentration: 5.0 × 10{sup 15} cm{sup −2}) into ZnO is performed using a 500 keV implanter. The maximum of the concentration of the implanted H estimated by a TRIM simulation is at 3600 nm in depth. The resistivity decreases from ∼10{sup 3} Ω cm for un implanted ZnO to 6.5 Ω cm for as-implanted, 2.3 × 10{sup −1} Ω cm for 200 °C annealed, and 3.2 × 10{sup −1} Ω cm for 400 °C annealed samples. The ERDA measurements can evaluate the concentration of hydrogens which move to the vicinity of the surface (surface to 300 nm or 100 nm) because of the diffusion by the annealing at 200 °C and 400 °C. The hydrogen concentration near the surface estimated using the 2.0 MeV helium beam is ∼3.8 × 10{sup 13} cm{sup −2} for annealed samples. From EPR measurements, the oxygen vacancy of +charge state (V{sub o}{sup +}) is observed in as-implanted samples. The V{sub o}{sup +} related signal (g = 1.96) observed under no illumination disappears after successive illumination with a red LED and appears again with a blue light illumination. The activation energy of as-implanted, 200 °C annealed, and 400 °C annealed samples estimated from the temperature dependence of carrier concentration lies between 29 meV and 23 meV, suggesting the existence of H interstitial as a shallow donor level.

Substoichiometric extraction of phosphorus

International Nuclear Information System (INIS)

Shigematsu, T.; Kudo, K.

1981-01-01

A study of the substoichiometric extraction of phosphorus is described. Phosphorus was extracted in the form of ternary compounds such as ammonium phosphomolybdate, 8-hydroxyquinolinium phosphomolybdate, tetraphenylarsonium phosphomolybdate and tri-n-octylamine phosphomolybdate. Consequently, phosphorus was extracted substoichiometrically by the addition of a substoichiometric amount of molybdenum for the four phosphomolybdate compounds. On the other hand, phosphorus could be separated substoichiometrically with a substoichiometric amount of tetraphenylarsonium chloride or tri-n-octylamine. Stoichiometric ratios of these ternary compounds obtained substoichiometrically were 1:12:3 for phosphorus, molybdenum and organic reagent. The applicability of these compounds to phosphorus determination is also discussed. (author)

Study of the /sup 12/N 2. 43 MeV level. [Differential cross sections; 44 MeV /sup 3/He; 52 MeV p

Energy Technology Data Exchange (ETDEWEB)

Cecil, F E; Shepard, J R; Sercely, R R; Peterson, R J [Colorado Univ., Boulder (USA). Nuclear Physics Lab.; King, N S.P. [California Univ., Davis (USA). Crocker Nuclear Lab.

1976-10-11

The differential cross sections have been measured for the reactions /sup 12/C(/sup 3/He, /sup 3/He')/sup 12/C(17.77 MeV 0/sup +/ T = 1) and /sup 12/C(/sup 3/He, t)/sup 12/N(2.43 MeV) at Esub(/sup 3/He) = 44 MeV. The similar shapes of the angular distributions and the relative magnitudes of the cross sections suggest that the /sup 12/N 2.43 MeV level is the 0/sup +/ T = 1 analog to the /sup 12/C 17.77 MeV level. The reaction /sup 14/N(p, t)/sup 12/N(2.43 MeV) at Esub(p) = 52 MeV is also studied. The strength with which this level is excited in this reaction is consistent with reasonable two-step calculations assuming the 2.43 MeV level to have Jsup(..pi..) = 0/sup +/.

Use of Phosphorus Isotopes for Improving Phosphorus Management in Agricultural Systems

International Nuclear Information System (INIS)

2016-10-01

Phosphorus is an essential element in plant, human and animal nutrition. Soils with low levels of phosphorus are widespread in many regions of the world, and the deficiency limits plant growth and reduces crop production and food quality. This publication provides comprehensive and up to date information on several topics related to phosphorus in soil–plant systems, in agricultural systems and in the environment. It presents the theoretical background as well as practical information on how to use nuclear and radioisotope tracer techniques in both laboratory and greenhouse experiments to assess soil phosphorus forms and plant-available soil phosphorus pools, and to understand the cycling processes in soil–plant systems. The publication focuses on practical applications of radiotracer techniques and can serve as resource material for research projects on improving sustainable phosphorus management in agricultural systems and as practical guidance on the use of phosphate isotopes in soil–plant research

Investigation of MeV-Cu implantation and channeling effects into porous silicon formation

International Nuclear Information System (INIS)

Ahmad, M.; Naddaf, M.

2011-01-01

P-type (1 1 1) silicon wafers were implanted by copper ions (2.5 MeV) in channeling and random directions using ion beam accelerator of the Atomic Energy Commission of Syria (AECS). The effect of implantation direction on formation process of porous silicon (PS) using electrochemical etching method has been investigated using scanning electron microscope (SEM) and photoluminescence (PL) techniques. SEM observations revealed that the size, shape and density of the formed pores are highly affected by the direction of beam implantation. This in turn is seen to influence the PL behavior of the PS.

Investigation of MeV-Cu implantation and channeling effects into porous silicon formation

International Nuclear Information System (INIS)

Ahmad, M.; Naddaf, M.

2012-01-01

P-type (1 1 1) silicon wafers were implanted by copper ions (2.5 MeV) in channeling and random directions using ion beam accelerator of the Atomic Energy Commission of Syria (AECS). The effect of implantation direction on formation process of porous silicon (PS) using electrochemical etching method has been investigated using scanning electron microscope (SEM) and photoluminescence (PL) techniques. SEM observations revealed that the size, shape and density of the formed pores are highly affected by the direction of beam implantation. This in turn is seen to influence the PL behavior of the PS.(author)

Investigation of MeV-Cu implantation and channeling effects into porous silicon formation

Science.gov (United States)

Ahmad, M.; Naddaf, M.

2011-11-01

P-type (1 1 1) silicon wafers were implanted by copper ions (2.5 MeV) in channeling and random directions using ion beam accelerator of the Atomic Energy Commission of Syria (AECS). The effect of implantation direction on formation process of porous silicon (PS) using electrochemical etching method has been investigated using scanning electron microscope (SEM) and photoluminescence (PL) techniques. SEM observations revealed that the size, shape and density of the formed pores are highly affected by the direction of beam implantation. This in turn is seen to influence the PL behavior of the PS.

Effects of energy variations of ions influencing a target on implantation

International Nuclear Information System (INIS)

Astakhov, V.P.; Rubtsov, V.A.; Aranovich, R.M.; Pavlov, P.V.

1981-01-01

In cases of phosphorus and boron ion implantation into silicon the dependence of electrophysical properties of ion-doped layers and target material near the layer boundaries on energy variation conditions of influencing ions is observed. A physical model explaining the dependence is proposed. It is found that for the target, being at room temperature, after successive annealing the qualitative characteristics of conditions (i.e. energy increase and decrease) on implantation of phosphorus ions into p-silicon and boron ions into n-silicon, as well as the value of energy stages, define rhosub(l) ion-doped layer resistivity and tausub(mc) nonequilibrium minority carrier lifetime in the base of p-n transitions. The essence of the effects observed is that for equal sets of Esub(i) ion energy values and PHIsub(i) corresponding phases at maximum energy used exceeding 30 keV, successive energy increase during implantation, when E 1 2 1 mode), leads to smaller rhosub(e) values and greater tausub(mc) than in case of successive energy decrease, when E 1 >E 2 >...E(E 2 mode) for any fixed annealing temperature. In cases when the maximum energy does not exceed 30 KeV, the E 1 and E 2 modes lead to analogous rhosub(e) and tausub(mc) values. The E 2 mode leads to enrichment of the ion-implanted layer with associations and complexes on the basis of interstitial atoms in comparison with the E 1 mode. The associations and complexes on thermal treatment are reformed into the higher-temperature interstitial complexes increasing rhosub(e) and decreasing tausub(mc). Supposition about the effect of these complexes and processes of structural transformations on annealing, hampering-improvement of structural properties of the ion-implanted layer and a crystal region bordered on it [ru

Correlation between substrate bias, growth process and structural properties of phosphorus incorporated tetrahedral amorphous carbon films

International Nuclear Information System (INIS)

Liu Aiping; Zhu Jiaqi; Han Jiecai; Wu Huaping; Jia Zechun

2007-01-01

We investigate the growth process and structural properties of phosphorus incorporated tetrahedral amorphous carbon (ta-C:P) films which are deposited at different substrate biases by filtered cathodic vacuum arc technique with PH 3 as the dopant source. The films are characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy, Raman spectroscopy, residual stress measurement, UV/VIS/NIR absorption spectroscopy and temperature-dependent conductivity measurement. The atomic fraction of phosphorus in the films as a function of substrate bias is obtained by XPS analysis. The optimum bias for phosphorus incorporation is about -80 V. Raman spectra show that the amorphous structures of all samples with atomic-scaled smooth surface are not remarkably changed when PH 3 is implanted, but some small graphitic crystallites are formed. Moreover, phosphorus impurities and higher-energetic impinging ions are favorable for the clustering of sp 2 sites dispersed in sp 3 skeleton and increase the level of structural ordering for ta-C:P films, which further releases the compressive stress and enhances the conductivity of the films. Our analysis establishes an interrelationship between microstructure, stress state, electrical properties, and substrate bias, which helps to understand the deposition mechanism of ta-C:P films

Defects induced by helium implantation in SiC

International Nuclear Information System (INIS)

Oliviero, E.; Barbot, J.F.; Declemy, A.; Beaufort, M.F.; Oliviero, E.

2008-01-01

SiC is one of the considered materials for nuclear fuel conditioning and for the fabrication of some core structures in future nuclear generation reactors. For the development of this advance technology, a fundamental research on this material is of prime importance. In particular, the implantation/irradiation effects have to be understood and controlled. It is with this aim that the structural alterations induced by implantation/irradiation in SiC are studied by different experimental techniques as transmission electron microscopy, helium desorption, X-ray diffraction and Rutherford backscattering spectrometry. In this work, the different types of defects induced by helium implantation in SiC, point or primary defects (obtained at low energy (∼100 eV) until spread defects (obtained at higher energy (until ∼2 MeV)) are exposed. The amorphization/recrystallization and swelling phenomena are presented too. (O.M.)

phosphorus sorption capacity as a guide for phosphorus availability

African Journals Online (AJOL)

Prof. Adipala Ekwamu

drained, light yellowish brown, loamy sand ... Dongola 2 Akked series: Deep, dark grayish brown, clay ... energy. Statistical analysis. Data collected were statistically analysed using ANOVA of MStatc ... phosphorus sorbed versus phosphorus.

Low-temperature technique of thin silicon ion implanted epitaxial detectors

Energy Technology Data Exchange (ETDEWEB)

Kordyasz, A.J.; Bednarek, A. [Warsaw University, Heavy Ion Laboratory, Warsaw (Poland); Le Neindre, N.; Bougault, R.; Lopez, O.; Merrer, Y.; Vient, E. [Universite de Caen, LPC, IN2P3-CNRS, ENSICAEN, Caen-Cedex (France); Parlog, M. [Universite de Caen, LPC, IN2P3-CNRS, ENSICAEN, Caen-Cedex (France); ' ' Horia Hulubei' ' National Institute of Physics and Nuclear Engineering (IFIN-HH), Bucharest Magurele (Romania); Casini, G.; Poggi, G.; Bini, M.; Valdre, S.; Scarlini, E.; Pasquali, G.; Pastore, G.; Piantelli, S.; Stefanini, A.; Olmi, A.; Barlini, S. [INFN Firenze, Sesto Fiorentino (Italy); Universita di Firenze, Sesto Fiorentino (Firenze) (Italy); Kowalczyk, M. [Warsaw University, Heavy Ion Laboratory, Warsaw (Poland); University of Warsaw, Institute of Experimental Physics, Warsaw (Poland); Frankland, J.D.; Bonnet, E.; Chbihi, A.; Gruyer, D. [CEA et IN2P3-CNRS, GANIL, Caen-Cedex 05 (France); Borderie, B.; Ademard, G.; Edelbruck, P.; Rivet, M.F.; Salomon, F. [IN2P3-CNRS, Institut de Physique Nucleaire, Orsay-Cedex (France); Boiano, A.; Rosato, E.; Meoli, A.; Ordine, A.; Spadaccini, G.; Tortone, G.; Vigilante, M.; Vanzanella, E. [Universita di Napoli ' ' Federico II' ' , Dipartimento di Scienze Fisiche, Napoli (Italy); INFN, Napoli (Italy); Bruno, M.; Serra, S.; Morelli, L.; Guerzoni, M. [INFN, Bologna (Italy); Universita di Bologna, Bologna (Italy); Alba, R.; Santonocito, D.; Maiolino, C. [INFN, Catania (Italy); Universita di Catania, LNS, Catania (Italy); Cinausero, M.; Gramegna, F.; Marchi, T. [INFN LNL Legnaro, Legnaro (Padova) (Italy); Kozik, T.; Kulig, P.; Twarog, T.; Sosin, Z. [Jagiellonian University, Cracow (Poland); Gasior, K.; Grzeszczuk, A.; Zipper, W. [University of Silesia, Silesian University, Katowice (Poland); Sarnecki, J.; Lipinski, D.; Wodzinska, H.; Brzozowski, A.; Teodorczyk, M.; Gajewski, M.; Zagojski, A.; Krzyzak, K. [Institute of Electronic Materials Technology, Warsaw (Poland); Tarasiuk, K.J. [University of Warsaw, Institute of Experimental Physics, Warsaw (Poland); Khabanowa, Z. [Faculty of Physics, Warsaw University of Technology, Warsaw (Poland); Kordyasz, L. [Warsaw University of Technology, Faculty of Mechatronics, Institute of Mikromechanics and Photonics, Department of Design of Precision Devices, Warsaw (Poland)

2015-02-01

A new technique of large-area thin ion implanted silicon detectors has been developed within the R and D performed by the FAZIA Collaboration. The essence of the technique is the application of a low-temperature baking process instead of high-temperature annealing. This thermal treatment is performed after B{sup +} ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from {sup 241}Am (left angle E{sub α} right angle = 5.5 MeV). Preliminary tests on the first thin detector (area ∼ 20 x 20 mm{sup 2}) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction {sup 84}Kr (E = 35 A MeV) + {sup 112}Sn. The ΔE - E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2 A MeV depending on the ion charge. (orig.)

Channeling Study of Lattice Disorder and Gold Implants in Gallium Nitride

International Nuclear Information System (INIS)

Jiang, Weilin; Weber, William J.; Thevuthasan, Suntharampillai; Shutthanandan, Vaithiyalingam

2001-01-01

Irradiation experiments have been performed 60? off normal for a GaN single crystal film at 300 K using 3 MeV Au3+ ions over fluences ranging from 0.88 to 86.2 ions/nm2. The accumulation of disorder on both the Ga and N sublattices has been simultaneously investigated using 3.8 MeV He+ non-Rutherford backscattering spectrometry along the and axial channeling directions. The accumulated disorder at the damage peak increases with dose below 10 dpa, and saturates at a relative level of ∼0.7 between 10 and 60 dpa. Complete amorphization starts at the surface and grows into the damage peak regime. A higher rate of disordering on the N sublattice is observed at low damage levels, which suggests a lower threshold displacement energy on the N sublattice in GaN. Isochronal annealing (20 min) at temperatures up to 1000 K has been used to follow the thermal response of the Ga disorder and Au implants. Some disorder recovery occurs at the intermediate dose s. A fraction of Au occupancy on the Ga lattice site is observed in the as-implanted GaN, and the substitutional fraction of the implanted Au increases with increasing temperature

Rutherford backscatter measurements on tellurium and cadmium implanted gallium arsenide

International Nuclear Information System (INIS)

Bell, E.C.

1979-10-01

The primary aim of the work described in this thesis was to examine implanted layers of the dopant impurities cadmium and tellurium in gallium arsenide and to experimentally assess their potential for producing electrically active layers. 1.5 MeV Rutherford backscattering measurements of lattice disorder and atom site location have been used to assess post implantation thermal annealing and elevated temperature implantations to site the dopant impurities on either gallium or arsenic lattice positions in an otherwise undisordered lattice. Pyrolitically deposited silicon dioxide was used as an encapsulant to prevent thermal dissociation of the gallium arsenide during annealing. It has been shown that high doses of cadmium and tellurium can be implanted without forming amorphous lattice disorder by heating the gallium arsenide during implantation to relatively low temperatures. Atom site location measurements have shown that a large fraction of a tellurium dose implanted at 180 0 C is located on or near lattice sites. Channeled backscatter measurements have shown that there is residual disorder or lattice strain in gallium arsenide implanted at elevated temperatures. The extent of this disorder has been shown to depend on the implanted dose and implantation temperature. The channeling effect has been used to measure annealing of the disorder. (author)

Model of the recrystallization mechanism of amorphous silicon layers created by ion implantation

International Nuclear Information System (INIS)

Drosd, R.M.

1979-11-01

The recrystallization behavior during annealing of thin films of amorphous (α) silicon, in contact with a single crystal silicon substrate (referred to as C), has been studied in the transmission electron microscope (TEM). The amorphous film is created during high dose phosphorus ion implantation at 100 keV. It was found that the crystal substrate orientation and the implantation temperature have dramatic effects on the recrystallizaton rate, and the defect microstructure produced during annealing. Specifically, (100) wafers implanted at 77 0 K contain only a low density of dislocation loops, but when the same wafer is implanted at room temperature the dislocation density is increased drastically. (111) wafers, when implanted at 77 0 K show a high density of microtwins, but as the implantation temperature is increased a gradual increase in the density of dislocation loops is observed along with a reduction of the microtwins. At an implantation temperature of about 100 0 C both orientations give an identical defect microstructure when annealed, which is a dense tangle of dislocations

Optical, structural, and chemical properties of CR-39 implanted with 5.2 MeV doubly charged carbon ions

Science.gov (United States)

Ali, Dilawar; Butt, M. Z.; Ishtiaq, Mohsin; Waqas Khaliq, M.; Bashir, Farooq

2016-11-01

Poly-allyl-diglycol-carbonate (CR-39) specimens were irradiated with 5.2 MeV doubly charged carbon ions using Pelletron accelerator. Ion dose was varied from 5 × 1013 to 5 × 1015 ions cm-2. Optical, structural, and chemical properties were investigated by UV-vis spectroscopy, x-ray diffractometer, and FTIR/Raman spectroscopy, respectively. It was found that optical absorption increases with increasing ion dose. Absorption edge shifts from UV region to visible region. The measured opacity values of pristine and ion implanted CR-39 range from 0.0519 to 4.7959 mm-1 following an exponential growth (9141%) with the increase in ion dose. The values of direct and indirect band gap energy decrease exponentially with an increase in ion dose by 59% and 71%, respectively. However, average refractive index in the visible region increases from 1.443 to 2.864 with an increase in ion dose, by 98%. A linear relation between band gap energy and crystallite size was observed. Both the number of carbon atoms in conjugation length and the number of carbon atoms per cluster increase linearly with the increase in ion dose. FTIR spectra showed that on C+2 ions irradiation, the intensity of all bands decreases gradually without appearance of any new band, indicating degradation of polymer after irradiation. Raman spectra revealed that the density of -CH2- group decreases on C+2 ions irradiation. However, the structure of CR-39 is completely destroyed on irradiation with ion dose 1 × 1015 and 5 × 1015 ions cm-2.

InGaAsP/InP quantum well buried heterostructure waveguides produced by ion implantation

International Nuclear Information System (INIS)

Zucker, J.E.; Jones, K.L.; Tell, B.; Brown-Goebeler, K.; Joyner, C.H.; Miller, B.I.; Young, M.G.

1992-01-01

Formation of buried InGaAsP/InP quantum well wave-guides by means of phosphorus ion implantation and thermal annealing during regrowth is demonstrated. Absorption spectra of implanted and unimplanted regions are used to estimate the induced index difference, which is of the order of 1% at 1.55μm. Calculated mode intensities are in good agreement with the observed near field intensity patterns. With this etchless implant technique, we achieve a significant reduction in propagation loss for singlemode pin waveguides relative to etched semi-insulating planar buried heterostructure waveguides fabricated from the same quantum well structure. In addition to reduced scattering loss, buried quantum well waveguides produced by ion implantation are more manufacturable because fewer and less-critical processing steps are involved. (author)

Electrical and electron microscopy observations on defects in ion implanted silicon

International Nuclear Information System (INIS)

Ling, H.

1978-01-01

Silicon single crystals were implanted with 100 keV phosphorus ions to a dose of 2 x 10 16 ions/cm 2 at both room-temperature and 600 0 C. They were isochronally annealed at temperatures ranging from 400 0 C to 900 0 C. Sheet resistivity measurements of the specimens were taken after each anneal, together with corresponding transmission electron micrographs

Lattice damage in ion-implanted silicon-germanium alloys

International Nuclear Information System (INIS)

Haynes, T.E.; Holland, O.W.

1992-08-01

The damage produced in Si 1-x Ge x alloys (0≤x≤1) by implantation of 70--100 keV 30 Si + has been measured as a function of temperature and fluence by ion channeling. For all compositions, the damage efficiency decreased sharply as the implant temperature was increased between room temperature and 150 degrees C. Furthermore, the damage efficiency in alloys of intermediate compositions (0.34≤x≤0.5) exceeds that in Ge, especially at elevated temperatures, despite the larger cascade energy density in Ge. It is shown that this behavior can be described based on a model in which the point-defect mobility is the dominant factor controlling damage retention, rather than the cascade energy density. This approach provides a framework for understanding other temperature-dependent phenomena related to damage growth in Si-Ge alloys including dose-rate effects and damage saturation in MeV implantation

Organic chemistry of elemental phosphorus

International Nuclear Information System (INIS)

Milyukov, V A; Budnikova, Yulia H; Sinyashin, Oleg G

2005-01-01

The principal achievements and the modern trends in the development of the chemistry of elemental phosphorus are analysed, described systematically and generalised. The possibilities and advantages of the preparation of organophosphorus compounds directly from white phosphorus are demonstrated. Attention is focused on the activation and transformation of elemental phosphorus in the coordination sphere of transition metal complexes. The mechanisms of the reactions of white phosphorus with nucleophilic and electrophilic reagents are discussed. Electrochemical approaches to the synthesis of organic phosphorus derivatives based on white phosphorus are considered.

Quantum effects in ion implanted devices

International Nuclear Information System (INIS)

Jamieson, D.N.; Chan, V.; Hudson, F.E.; Andresen, S.E.; Yang, C.; Hopf, T.; Hearne, S.M.; Pakes, C.I.; Prawer, S.; Gauja, E.; Yang, C.; Dzurak, A.S.; Yang, C.; Clark, R.G.; Yang, C.

2005-01-01

Fabrication of nanoscale devices that exploit the rules of quantum mechanics to process information presents formidable technical challenges because it will be necessary to control quantum states at the level of individual atoms, electrons or photons. We have developed a pathway to the construction of quantum devices using ion implantation and demonstrate, using charge transport analysis, that the devices exhibit single electron effects. We construct devices that employ two P donors in Si by employing the technique of ion beam induced charge (IBIC) in which single 14 keV P ions can be implanted into ultra-pure silicon by monitoring on-substrate detector electrodes. We have used IBIC with a MeV nuclear microprobe to map and measure the charge collection efficiency in the development of the electrode structure and show that 100% charge collection efficiency can be achieved leading to the fabrication of prototype devices that display quantum effects in the transport of single charge quanta between the islands of implanted donors. (author). 9 refs., 4 figs., 1 tab

Sargasso Sea phosphorus biogeochemistry: an important role for dissolved organic phosphorus (DOP

Directory of Open Access Journals (Sweden)

M. W. Lomas

2010-02-01

Full Text Available Inorganic phosphorus (SRP concentrations in the subtropical North Atlantic are some of the lowest in the global ocean and have been hypothesized to constrain primary production. Based upon data from several transect cruises in this region, it has been hypothesized that dissolved organic phosphorus (DOP supports a significant fraction of primary production in the subtropical North Atlantic. In this study, a time-series of phosphorus biogeochemistry is presented for the Bermuda Atlantic Time-series Study site, including rates of phosphorus export. Most parameters have a seasonal pattern, although year-over-year variability in the seasonal pattern is substantial, likely due to differences in external forcing. Suspended particulate phosphorus exhibits a seasonal maximum during the spring bloom, despite the absence of a seasonal peak in SRP. However, DOP concentrations are at an annual maximum prior to the winter/spring bloom and decline over the course of the spring bloom while whole community alkaline phosphatase activities are highest. As a result of DOP bioavailability, the growth of particles during the spring bloom occurs in Redfield proportions, though particles exported from the euphotic zone show rapid and significant remineralization of phosphorus within the first 50 m below the euphotic zone. Based upon DOP data from transect cruises in this region, the southward cross gyral flux of DOP is estimated to support ~25% of annual primary production and ~100% of phosphorus export. These estimates are consistent with other research in the subtropical North Atlantic and reinforce the hypothesis that while the subtropics may be phosphorus stressed (a physiological response to low inorganic phosphorus, utilization of the DOP pool allows production and accumulation of microbial biomass at Redfield proportions.

Phosphorus use efficiency of maize: an investigation using radiotracer phosphorus (32P)

International Nuclear Information System (INIS)

Meena, S.

2017-01-01

A better understanding on the nutrient uptake and utilization by plants is essential for developing better nutrient efficient cultivars suited for optimal production. Precise information on the PUE of crops and P dynamics can be obtained with the help of radiotracer technique. To study the phosphorus acquisition and phosphorus use efficiency of added sources in maize using 32 P, a pot culture experiment was conducted in a medium P soil (21.26 kg ha -1 ). The treatments were P as Single Superphosphate, Enriched FYM with Single Superphosphate (EFYM), DAP, Nutriseed pack (SSP), Nutriseed pack (DAP). The above treatments were applied along with phosphobacteria. Totally there were ten treatments replicated four times. Phosphorus sources were tagged with 32 P (obtained as 32 P in orthophosphoric medium from the Board of Radiation and Isotope Technology) and applied as per the treatments. Radioactive 32 P in the grain and stover sample was determined using Liquid Scintillation Counter (Perkin Elmer Tricarb 2810 R). Using the data, per cent phosphorus derived from fertilizer (%Pdff), per cent phosphorus derived from soil (%Pdfs), Phosphorus Use Efficiency (PUE) and A value were determined. Application of Phosphorus (SSP, DAP, enriched FYM with SSP, Nutriseed pack (SSP) and Nutriseed pack (DAP)) along with PB increased the per cent phosphorus derived from fertilizer (% Pdff), P uptake from fertilizer and PUE. The highest PUE of 25.38 was recorded in the treatment where enriched FYM with SSP was applied along with PB. (author)

High-temperature Au implantation into Ni-Be and Ni-Si alloys

Science.gov (United States)

James, M. R.; Lam, N. Q.; Rehn, L. E.; Baldo, P. M.; Funk, L.; Stubbins, J. F.

1992-12-01

Effects of implantation temperature and target composition on depth distribution of implanted species were investigated. Au+ ions were implanted at 300 keV into polycrystalline Ni-Be and Ni-Si alloys between 25 and 700C to a dose of 10(exp 16) cm(exp -2). Depth distributions of Au were analyzed with RBS using He+ at both 1.7 and 3.0 MeV, and those of the other alloying elements by SIMS. Theoretical modeling of compositional redistribution during implantation at elevated temperatures was also carried out with the aid of a comprehensive kinetic model. The analysis indicated that below approximately 250C, the primary controlling processes were preferential sputtering and displacement mixing, while between 250 and 600C radiation-induced segregation was dominant. Above 600C, thermal-diffusion effects were most important. Fitting of model calculations to experimental measurements provided values for various defect migration and formation parameters.

Optimization of a plasma immersion ion implantation process for shallow junctions in silicon

Energy Technology Data Exchange (ETDEWEB)

Ray, Ashok; Nori, Rajashree; Bhatt, Piyush; Lodha, Saurabh; Pinto, Richard, E-mail: rpinto@ee.iitb.ac.in; Rao, Valipe Ramgopal [Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Jomard, François; Neumann-Spallart, Michael [Groupe d' Étude de la Matière Condensée, C.N.R.S./Université de Versailles-St.Quentin, 45, Avenue des États-Unis, 78035 Versailles Cedex (France)

2014-11-01

A plasma immersion ion implantation (PIII) process has been developed for realizing shallow doping profiles of phosphorus and boron in silicon using an in-house built dual chamber cluster tool. High Si etch rates observed in a 5% PH{sub 3} in H{sub 2} plasma have been ascribed to high concentration of H(α) radicals. Therefore, subsequent work was carried out with 5% PH{sub 3} in He, leading to much smaller etch rates. By optical emission spectroscopy, the radical species H(α), PH*{sub 2}, and PH* have been identified. The concentration of all three species increased with pressure. Also, ion concentrations increased with pressure as evidenced by Langmuir data, with a maximum occurring at 0.12 mbar. The duty cycle of pulsed DC bias has a significant bearing on both the implantation and the etching process as it controls the leakage of positive charge collected at the surface of the silicon wafer during pulse on-time generated primarily due to secondary electron emission. The P implant process was optimized for a duty cycle of 10% or less at a pressure of 0.12 mbar with implant times as low as 30 s. Secondary ion mass spectroscopy showed a P dopant depth of 145 nm after rapid thermal annealing (RTA) at 950 °C for 5 s, resulting in a sheet resistance of 77 Ω/◻. Si n{sup +}/p diodes fabricated with phosphorus implantation using optimized PIII and RTA conditions exhibit J{sub on}/J{sub off} > 10{sup 6} with an ideality factor of nearly 1.2. Using similar conditions, shallow doping profiles of B in silicon have also been realized.

Towards global phosphorus security: A systems framework for phosphorus recovery and reuse options

NARCIS (Netherlands)

Cordell, D.; Rosemarin, A.; Schroder, J.J.; Smit, A.L.

2011-01-01

Human intervention in the global phosphorus cycle has mobilised nearly half a billion tonnes of the element from phosphate rock into the hydrosphere over the past half century. The resultant water pollution concerns have been the main driver for sustainable phosphorus use (including phosphorus

Effect of supplemented fungal phytase on performance and phosphorus availability by phosphorus-depleted juvenile rainbow trout (Oncorhynchus mykiss), and on the magnitude and composition of phosphorus waste output

DEFF Research Database (Denmark)

Dalsgaard, Anne Johanne Tang; Schøn Ekmann, K.; Pedersen, Per Bovbjerg

2009-01-01

The effect of a supplemental fungal phytase on performance and phosphorus availability by juvenile rainbow trout fed diets with a high inclusion of plant based protein and on the magnitude and composition of the waste phosphorus production was tested in a 2 × 3 factorial design at a temperature....../suspended phosphorus waste output from fish fed the phytase supplemented diet containing 0.71% available phosphorus, suggesting that the phosphorus requirement was reached at this phosphorus level. Consistent with this, there was a substantial increase in the dissolved/suspended phosphorus waste output from fish fed...... the phytase supplemented diet containing 0.81% available phosphorus, suggesting that the phosphorus requirement was exceeded in this group. This study demonstrated that phytase supplementation will be advantageous to the fish and the environment if supplemented to low-phosphorus diets containing a large share...

Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions

Energy Technology Data Exchange (ETDEWEB)

Fekecs, André [Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, QC J1K 0A5 (Canada); Regroupement Québécois sur les Matériaux de Pointe, QC (Canada); Chicoine, Martin [Département de Physique, Université de Montréal, Montréal, QC H3C 3J7 (Canada); Regroupement Québécois sur les Matériaux de Pointe, QC (Canada); Ilahi, Bouraoui [Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, QC J1K 0A5 (Canada); SpringThorpe, Anthony J. [Canadian Photonics Fabrication Centre, National Research Council, Ottawa, ON K1A 0R6 (Canada); Schiettekatte, François [Département de Physique, Université de Montréal, Montréal, QC H3C 3J7 (Canada); Regroupement Québécois sur les Matériaux de Pointe, QC (Canada); Morris, Denis [Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, QC J1K 0A5 (Canada); Regroupement Québécois sur les Matériaux de Pointe, QC (Canada); and others

2015-09-15

Highlights: • InGaAsP/InP alloys were processed by MeV ion implantation and rapid thermal annealing. • X-ray diffraction and Hall measurement results are compared for several process conditions. • Amorphous layers formed at low implantation temperature. • Dynamic annealing prevented amorphization at implantation above room temperature. • After annealing near 500 °C, sheet resistivities of 10{sup 7} Ω/sq were obtained with low temperature Fe implantation. - Abstract: We report on critical ion implantation and rapid thermal annealing (RTA) process temperatures that produce resistive Fe- or Ga-implanted InGaAsP/InP heterostructures. Two InGaAsP/InP heterostructure compositions, with band gap wavelengths of 1.3 μm and 1.57 μm, were processed by ion implantation sequences done at multiple MeV energies and high fluence (10{sup 15} cm{sup −2}). The optimization of the fabrication process was closely related to the implantation temperature which influences the type of implant-induced defect structures. With hot implantation temperatures, at 373 K and 473 K, X-ray diffraction (XRD) revealed that dynamic defect annealing was strong and prevented the amorphization of the InGaAsP layers. These hot-implanted layers were less resistive and RTA could not optimize them systematically in favor of high resistivity. With cold implantation temperatures, at 83 K and even at 300 K, dynamic annealing was minimized. Damage clusters could form and accumulate to produce resistive amorphous-like structures. After recrystallization by RTA, polycrystalline signatures were found on every low-temperature Fe- and Ga-implanted structures. For both ion species, electrical parameters evolved similarly against annealing temperatures, and resistive structures were produced near 500 °C. However, better isolation was obtained with Fe implantation. Differences in sheet resistivities between the two alloy compositions were less than band gap-related effects. These observations, related

[Apatite-forming ability of pure titanium implant after micro-arc oxidation treatment].

Science.gov (United States)

Tian, Zhihui; Zhang, Yu; Wang, Lichao; Nan, Kaihui

2013-10-01

To investigate the apatite forming ability of pure titanium implant after micro-arc oxidation treatment in simulated body fluid (SBF) and obtain implants with calcium phosphate (Ca-P) layers. The implants were immersed in (SBF) after micro-arc oxidation treatment for different time lengths, and their apatite forming ability and the morphology and constituents of the Ca-P layers formed on the sample surface were analyzed using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and energy dispersive electron probe. After immersion in SBF, large quantities of Ca-P layers were induced on the surface of the samples. The Ca-P layers were composed of octacalcium phosphate and carbonated hydroxyapatite, and the crystals showed a plate-like morphology with an oriented growth. The implants with micro-arc oxidation treatment show good apatite forming ability on the surface with rich calcium and phosphorus elements. The formed layers are composed of bone-like apatite including octacalcium phosphate and carbonated hydroxyapatite.

SU-E-T-274: Radiation Therapy with Very High-Energy Electron (VHEE) Beams in the Presence of Metal Implants

Energy Technology Data Exchange (ETDEWEB)

Jensen, C; Palma, B; Qu, B; Maxim, P; Loo, B; Bazalova, M [Department of Radiation Oncology, Stanford University, Stanford, CA (United States); Hardemark, B; Hynning, E [RaySearch Laboratories, Stockholm (Sweden)

2014-06-01

Purpose: To evaluate the effect of metal implants on treatment plans for radiation therapy with very high-energy electron (VHEE) beams. Methods: The DOSXYZnrc/BEAMnrc Monte Carlo (MC) codes were used to simulate 50–150MeV VHEE beam dose deposition and its effects on steel and titanium (Ti) heterogeneities in a water phantom. Heterogeneities of thicknesses ranging from 0.5cm to 2cm were placed at 10cm depth. MC was also used to calculate electron and photon spectra generated by the VHEE beams' interaction with metal heterogeneities. The original VMAT patient dose calculation was planned in Eclipse. Patient dose calculations with MC-generated beamlets were planned using a Matlab GUI and research version of RayStation. VHEE MC treatment planning was performed on water-only geometry and water with segmented prostheses (steel and Ti) geometries with 100MeV and 150MeV beams. Results: 100MeV PDD 5cm behind steel/Ti heterogeneity was 51% less than in the water-only phantom. For some cases, dose enhancement lateral to the borders of the phantom increased the dose by up to 22% in steel and 18% in Ti heterogeneities. The dose immediately behind steel heterogeneity decreased by an average of 6%, although for 150MeV, the steel heterogeneity created a 23% increase in dose directly behind it. The average dose immediately behind Ti heterogeneities increased 10%. The prostate VHEE plans resulted in mean dose decrease to the bowel (20%), bladder (7%), and the urethra (5%) compared to the 15MV VMAT plan. The average dose to the body with prosthetic implants was 5% higher than to the body without implants. Conclusion: Based on MC simulations, metallic implants introduce dose perturbations to VHEE beams from lateral scatter and backscatter. However, when performing clinical planning on a prostate case, the use of multiple beams and inverse planning still produces VHEE plans that are dosimetrically superior to photon VMAT plans. BW Loo and P Maxim received research support from

SU-E-T-274: Radiation Therapy with Very High-Energy Electron (VHEE) Beams in the Presence of Metal Implants

International Nuclear Information System (INIS)

Jensen, C; Palma, B; Qu, B; Maxim, P; Loo, B; Bazalova, M; Hardemark, B; Hynning, E

2014-01-01

Purpose: To evaluate the effect of metal implants on treatment plans for radiation therapy with very high-energy electron (VHEE) beams. Methods: The DOSXYZnrc/BEAMnrc Monte Carlo (MC) codes were used to simulate 50–150MeV VHEE beam dose deposition and its effects on steel and titanium (Ti) heterogeneities in a water phantom. Heterogeneities of thicknesses ranging from 0.5cm to 2cm were placed at 10cm depth. MC was also used to calculate electron and photon spectra generated by the VHEE beams' interaction with metal heterogeneities. The original VMAT patient dose calculation was planned in Eclipse. Patient dose calculations with MC-generated beamlets were planned using a Matlab GUI and research version of RayStation. VHEE MC treatment planning was performed on water-only geometry and water with segmented prostheses (steel and Ti) geometries with 100MeV and 150MeV beams. Results: 100MeV PDD 5cm behind steel/Ti heterogeneity was 51% less than in the water-only phantom. For some cases, dose enhancement lateral to the borders of the phantom increased the dose by up to 22% in steel and 18% in Ti heterogeneities. The dose immediately behind steel heterogeneity decreased by an average of 6%, although for 150MeV, the steel heterogeneity created a 23% increase in dose directly behind it. The average dose immediately behind Ti heterogeneities increased 10%. The prostate VHEE plans resulted in mean dose decrease to the bowel (20%), bladder (7%), and the urethra (5%) compared to the 15MV VMAT plan. The average dose to the body with prosthetic implants was 5% higher than to the body without implants. Conclusion: Based on MC simulations, metallic implants introduce dose perturbations to VHEE beams from lateral scatter and backscatter. However, when performing clinical planning on a prostate case, the use of multiple beams and inverse planning still produces VHEE plans that are dosimetrically superior to photon VMAT plans. BW Loo and P Maxim received research support from

III. Quantitative aspects of phosphorus excretionin ruminants

OpenAIRE

Bravo , David; Sauvant , Daniel; Bogaert , Catherine; Meschy , François

2003-01-01

International audience; Ruminant phosphorus excretion and metabolism were studied through a database. Faecal endogenous phosphorus is the main pathway of phosphorus excretion and averages 0.85 of total faecal phosphorus. The remaining 0.15 is unabsorbed dietary phosphorus. Faecal endogenous phosphorus is mainly unabsorbed phosphorus, with saliva being the major source, and is correlated to factors influencing saliva secretion (DM intake, physical dietary characteristics and dietary phosphorus...

The transmission diffraction patterns of silicon implanted with high-energy α-particles

International Nuclear Information System (INIS)

Wieteska, K.; Wierzchowski, W.

1995-01-01

2 mm thick silicon wafers, implanted with 4.8 MeV α-particles are studied by means of transmission section topography and additionally by Lang and double-crystal methods. It was found that all three methods produced a negligible contrast in the symmetric transmission reflection apart from some fragments of the implanted area's boundaries. The interference fringes were observed in the case of asymmetric reflections. The asymmetric section topographs revealed distinct interference fringes, which cannot be explained in terms of simple bicrystal models. In particular, the curvature of these fringes may be interpreted as being due to the change in the implanted ion dose along the beam intersecting the crystal. Some features of the fringe pattern were reproduced by numerical integration of Takagi-Taupin equations. (author)

Phosphorus blood test

Science.gov (United States)

... page: //medlineplus.gov/ency/article/003478.htm Phosphorus blood test To use the sharing features on this page, please enable JavaScript. The phosphorus blood test measures the amount of phosphate in the blood. ...

Evidence for two narrow pp resonances at 2020 MeV and 2200 MeV

CERN Document Server

Benkheiri, P; Bouquet, B; Briandet, P; D'Almagne, B; Dang-Vu, C; De Rosny, G; Eisenstein, B I; Ferrer, A; Fleury, P; Grossetête, B; Irwin, G; Jacholkowski, A; Lahellec, A; Nguyen, H; Petroff, P; Richard, F; Rivet, P; Roudeau, P; Rougé, A; Rumpf, M; Six, J; Thénard, J M; Treille, D; Volte, A; Yaffe, D; Yiou, T P; Yoshida, H

1977-01-01

From the study of the reaction pi /sup -/p to p/sub F/pp pi /sup -/ using a fast proton (p/sub F/) trigger device in the CERN Omega spectrometer, the authors find evidence for two narrow pp states produced mainly in association with a Delta degrees (1232) and a N degrees (1520). The statistical significance of each peak is greater than 6 standard deviations. Masses and natural widths of these resonances are respectively M/sub 1/=2020+or-3 MeV, Gamma /sub 1 /=24+or-12 MeV and M/sub 2/=2204+or-5 MeV, Gamma /sub 2/=16/sub -16 //sup +20/ MeV. The data are consistent with a small production of the narrow approximately 1935 MeV resonance already reported. Production cross sections for these new pp resonances are given. (8 refs).

Screening crops for efficient phosphorus acquisition in a low phosphorus soil using radiotracer technique

International Nuclear Information System (INIS)

Meena, S.; Malarvizhi, P.; Rajeswari, R.

2017-01-01

Deficiency of phosphorus (P) is the major limitation to agricultural production. Identification of cultivars with greater capacity to grow in soils having low P availability (phosphorus efficiency) will help in P management in a sustainable way. Green house experiment with maize (CO 6) and cotton (MCU 13) as test crops with four levels of phosphorus (0, 3.75, 7.50 and 15 mg P kg -1 soil) was conducted in a P deficient soil (7.2 kg ha -1 ) to study the phosphorus acquisition characteristics and to select efficient crop using 32 P radiotracer technique. Carrier free 32 P obtained as orthophosphoric acid in dilute hydrochloric acid medium from the Board of Radiation and Isotope Technology, Mumbai was used for labeling the soil @ 3200 kBq pot -1 . After 60 days the crops were harvested and the radioactivity was measured in the plant samples using Liquid scintillation counter (PerkinElmer - Tricarb 2810 TR). Different values of specific radioactivity and Isotopically Exchangeable Phosphorus for maize and cotton indicated that chemically different pools of soil P were utilized and maize accessing a larger pool than cotton. Maize having recorded high Phosphorus Use Efficiency, Phosphorus Efficiency and low Phosphorus Stress Factor values, it is a better choice for P deficient soils. Higher Phosphorus Acquisition Efficiency of maize (59 %) than cotton (48%) can be related to the ability of maize to take up P from insoluble inorganic P forms. (author)

A detailed physical model for ion implant induced damage in silicon

International Nuclear Information System (INIS)

Tian, S.; Morris, M.F.; Morris, S.J.; Obradovic, B.; Wang, G.; Tasch, A.F.

1998-01-01

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF 2 , and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated in the UT-MARLOWE ion implantation simulator, and has been developed primarily for use in engineering workstations. This damage model is the most physical model in the literature to date within the framework of the binary collision approximation (BCA), and provides the required, accurate as-implanted impurity profiles and damage profiles for transient enhanced diffusion (TED) simulation

Diffusion and solubility of Au implanted into the AZ1350 photoresist

International Nuclear Information System (INIS)

Soares, M.R.F.; Kaschny, J.R.A.; Santos, J.H.R. dos; Amaral, L.; Behar, M.; Fink, D.

2000-01-01

In the present paper we report diffusion and solubility results for Au into the photoresist AZ1350. Au was implanted into AZ1350 films at very low energy (E=20 keV) and fluences (PHI=10 12 and 5x10 12 Au/cm 2 ). In this way the radiation damage introduced by the implantation process was minimized and cluster formation was avoided. Annealing was performed in the 150-300 deg. C temperature range and the as implanted and thermal treated samples were analyzed using the Rutherford backscattering (RBS) technique. For the lowest implantation fluence the results have shown a regular atomic diffusion process characterized by an activation energy of E a =640 meV. Instead, for PHI=5x10 12 Au/cm 2 the diffusional mechanism has revealed the effects of the radiation damage. In addition solubility measurements indicate that the solubility limit at 250 deg. C is of the order 0.3 at.%

Effect of helium implantation on mechanical properties of EUROFER97 evaluated by nanoindentation

International Nuclear Information System (INIS)

Roldán, M.; Fernández, P.; Rams, J.; Jiménez-Rey, D.; Ortiz, C.J.; Vila, R.

2014-01-01

Helium effects on EUROFER97 mechanical properties were studied by means of nanoindentation. The steel was implanted with He ions in a stair-like profile configuration using energies from 2 to 15 MeV at room temperature. Firstly, a deep nanoindentation study was carried out on as-received state (normalized + tempered) in order to obtain a reliable properties database at the nanometric scale, including aspects such as indentation size effect. The nanoindentation hardness of tests on He implanted samples showed a hardness increase depending on the He concentration. The hardness increase follows the He implantation concentration profile with a good accuracy according to BCA calculations using MARLOWE code, considering the whole volume affected by the nanoindentation tests. The results obtained in this work shown that nanoindentation technique permits to assess any change of hardness properties due to ion implantation

Annealing Behavior of Al-Implantation-Induced Disorder in 4H-SiC

International Nuclear Information System (INIS)

Zhang, Yanwen; Weber, William J.; Jiang, Weilin; Shutthanandan, V.; Thevuthasan, Suntharampillai; Janson, Martin; Hallen, Anders

2004-01-01

Single crystal 4H-SiC films were implanted at 150 K with 1.1 MeV Al 2 2+ and subsequently annealed at elevated temperatures. Rutherford backscattering spectrometry (RBS) results indicate that the relative Si disorder at the damage peak recovers significantly as the annealing temperature increases. However, the residual Si disorder is more resistant to high-temperature annealing in the region of the implanted Al. The maximum concentration of Al profile measured by secondary ion mass spectroscopy (SIMS) is a factor of 1000 lower than the level of the residual Si disorder at the same region. Analysis of these results indicates that the excess residual Si disorder around the implanted Al projected range cannot be accounted for by just the Al interstitials; instead, it appears that each implanted Al stabilizes or inhibits recovery for an equivalent of a few hundred Si interstitials under the current experimental conditions

Few-layer black phosphorus nanoparticles.

Science.gov (United States)

Sofer, Zdenek; Bouša, Daniel; Luxa, Jan; Mazanek, Vlastimil; Pumera, Martin

2016-01-28

Herein, black phosphorus quantum dots and nanoparticles of a few layer thickness were prepared and characterized using STEM, AFM, dynamic light scattering, X-ray photoelectron spectroscopy, X-ray diffraction, Raman spectroscopy and photoluminescence. Impact electrochemistry of the induvidual black phosphorus nanoparticles allows their size determination. The centrifugation of colloidal black phosphorus nanoparticles allowed separation of quantum dots with sizes up to 15 nm. These black phosphorus nanoparticles exhibit a large band gap and are expected to find a wide range of applications from semiconductors to biomolecule tags. The use of black phosphorus nanoparticles for vapour sensing was successfully demonstrated.

Formation of p-type ZnO thin film through co-implantation

Science.gov (United States)

Chuang, Yao-Teng; Liou, Jhe-Wei; Woon, Wei-Yen

2017-01-01

We present a study on the formation of p-type ZnO thin film through ion implantation. Group V dopants (N, P) with different ionic radii are implanted into chemical vapor deposition grown ZnO thin film on GaN/sapphire substrates prior to thermal activation. It is found that mono-doped ZnO by N+ implantation results in n-type conductivity under thermal activation. Dual-doped ZnO film with a N:P ion implantation dose ratio of 4:1 is found to be p-type under certain thermal activation conditions. Higher p-type activation levels (1019 cm-3) under a wider thermal activation range are found for the N/P dual-doped ZnO film co-implanted by additional oxygen ions. From high resolution x-ray diffraction and x-ray photoelectron spectroscopy it is concluded that the observed p-type conductivities are a result of the promoted formation of PZn-4NO complex defects via the concurrent substitution of nitrogen at oxygen sites and phosphorus at zinc sites. The enhanced solubility and stability of acceptor defects in oxygen co-implanted dual-doped ZnO film are related to the reduction of oxygen vacancy defects at the surface. Our study demonstrates the prospect of the formation of stable p-type ZnO film through co-implantation.

Dietary phosphorus acutely impairs endothelial function.

Science.gov (United States)

Shuto, Emi; Taketani, Yutaka; Tanaka, Rieko; Harada, Nagakatsu; Isshiki, Masashi; Sato, Minako; Nashiki, Kunitaka; Amo, Kikuko; Yamamoto, Hironori; Higashi, Yukihito; Nakaya, Yutaka; Takeda, Eiji

2009-07-01

Excessive dietary phosphorus may increase cardiovascular risk in healthy individuals as well as in patients with chronic kidney disease, but the mechanisms underlying this risk are not completely understood. To determine whether postprandial hyperphosphatemia may promote endothelial dysfunction, we investigated the acute effect of phosphorus loading on endothelial function in vitro and in vivo. Exposing bovine aortic endothelial cells to a phosphorus load increased production of reactive oxygen species, which depended on phosphorus influx via sodium-dependent phosphate transporters, and decreased nitric oxide production via inhibitory phosphorylation of endothelial nitric oxide synthase. Phosphorus loading inhibited endothelium-dependent vasodilation of rat aortic rings. In 11 healthy men, we alternately served meals containing 400 mg or 1200 mg of phosphorus in a double-blind crossover study and measured flow-mediated dilation of the brachial artery before and 2 h after the meals. The high dietary phosphorus load increased serum phosphorus at 2 h and significantly decreased flow-mediated dilation. Flow-mediated dilation correlated inversely with serum phosphorus. Taken together, these findings suggest that endothelial dysfunction mediated by acute postprandial hyperphosphatemia may contribute to the relationship between serum phosphorus level and the risk for cardiovascular morbidity and mortality.

Interference effects in Bragg-case synchrotron section topography of elastically bent silicon implanted crystals

International Nuclear Information System (INIS)

Wierzchowski, W.; Wieteska, K.; Graeff, W.

1997-01-01

White-beam synchrotron section topography was applied to a silicon crystal implanted with 4.8 MeV α-particles elastically bent with the radius of curvature close to 100 m. A number of section patterns corresponding to different reflections was analysed. It was found that the section pattern in the bent sample was drastically different from those observed in a flat sample. The difference consists in the occurrence of the sets of additional interference fringes covering a long distance up to several millimetres behind the main diffraction maximum. It was possible to reproduce some characteristic features of the fringes both in the implanted and non-implanted region by numerical integration of the Takagi-Taupin equation

Lattice location of platinum ions implanted into single crystal zirconia and their annealing behaviour

Energy Technology Data Exchange (ETDEWEB)

Cao, D X [Royal Melbourne Inst. of Tech., VIC (Australia); Sood, D K [Academia Sinica, Shanghai, SH (China). Shanghai Inst. of Nuclear Research; Brown, I G [Lawrence Berkeley Lab., CA (United States)

1994-12-31

Single crystal samples of (100) oriented cubic zirconia stabilised with 9.5 mol % yttria were implanted with platinum ions, using a metal vapour vacuum arc (MEVVA) high current ion implanter, to a nominal dose of 1x10{sup 17} ions/cm{sup 2}. The implanted samples were annealed isothermally in air ambient at 1200 deg C, from 1-24 hours. Rutherford Backscattering Spectrometry and Channeling (RBSC) of 2 MeV He ions are employed to determine depth distributions of ion damage, Pt ions and substitutionality of Pt ions before and after annealing. The damage behaviour, Pt migration and lattice location are discussed in terms of metastable phase formation and solid solubility considerations. 7 refs., 3 figs.

Lattice location of platinum ions implanted into single crystal zirconia and their annealing behaviour

Energy Technology Data Exchange (ETDEWEB)

Cao, D.X. [Royal Melbourne Inst. of Tech., VIC (Australia); Sood, D.K. [Academia Sinica, Shanghai, SH (China). Shanghai Inst. of Nuclear Research; Brown, I.G. [Lawrence Berkeley Lab., CA (United States)

1993-12-31

Single crystal samples of (100) oriented cubic zirconia stabilised with 9.5 mol % yttria were implanted with platinum ions, using a metal vapour vacuum arc (MEVVA) high current ion implanter, to a nominal dose of 1x10{sup 17} ions/cm{sup 2}. The implanted samples were annealed isothermally in air ambient at 1200 deg C, from 1-24 hours. Rutherford Backscattering Spectrometry and Channeling (RBSC) of 2 MeV He ions are employed to determine depth distributions of ion damage, Pt ions and substitutionality of Pt ions before and after annealing. The damage behaviour, Pt migration and lattice location are discussed in terms of metastable phase formation and solid solubility considerations. 7 refs., 3 figs.

Effect of phosphorus stress on Microcystis aeruginosa growth and phosphorus uptake.

Directory of Open Access Journals (Sweden)

Sajeela Ghaffar

Full Text Available This study was designed to advance understanding of phosphorus regulation of Microcystis aeruginosa growth, phosphorus uptake and storage in changing phosphorus (P conditions as would occur in lakes. We hypothesized that Microcystis growth and nutrient uptake would fit classic models by Monod, Droop, and Michaelis-Menten in these changing conditions. Microcystis grown in luxury nutrient concentrations was transferred to treatments with phosphorus concentrations ranging from 0-256 μg P∙L-1 and luxury nitrogen. Dissolved phosphorus concentration, cell phosphorus quota, P uptake rate and cell densities were measured at day 3 and 6. Results showed little relationship to predicted models. Microcystis growth was asymptotically related to P treatment from day 0-3, fitting Monod model well, but negatively related to P treatment and cell quota from day 3-6. From day 0-3, cell quota was negatively related to P treatments at <2 μg∙L-1, but increased slightly at higher P. Cell quota decreased greatly in low P treatments from day 3-6, which may have enabled high growths in low P treatments. P uptake was positively and linearly related to P treatment during both periods. Negative uptake rates and increases in measured culture phosphorus concentrations to 5 μg∙L-1 in the lowest P treatments indicated P leaked from cells into culture medium. This leakage during early stages of the experiment may have been sufficient to stimulate metabolism and use of intracellular P stores in low P treatments for rapid growth. Our study shows P regulation of Microcystis growth can be complex as a result of changing P concentrations, and this complexity may be important for modeling Microcystis for nutrient and ecosystem management.

Ballistic self-annealing during ion implantation

International Nuclear Information System (INIS)

Prins, Johan F.

2001-01-01

Ion implantation conditions are considered during which the energy, dissipated in the collision cascades, is low enough to ensure that the defects, which are generated during these collisions, consist primarily of vacancies and interstitial atoms. It is proposed that ballistic self-annealing is possible when the point defect density becomes high enough, provided that none, or very few, of the interstitial atoms escape from the layer being implanted. Under these conditions, the fraction of ballistic atoms, generated within the collision cascades from substitutional sites, decreases with increasing ion dose. Furthermore, the fraction of ballistic atoms, which finally end up within vacancies, increases with increasing vacancy density. Provided the crystal structure does not collapse, a damage threshold should be approached where just as many atoms are knocked out of substitutional sites as the number of ballistic atoms that fall back into vacancies. Under these conditions, the average point defect density should approach saturation. This model is applied to recently published Raman data that have been measured on a 3 MeV He + -ion implanted diamond (Orwa et al 2000 Phys. Rev. B 62 5461). The conclusion is reached that this ballistic self-annealing model describes the latter data better than a model in which it is assumed that the saturation in radiation damage is caused by amorphization of the implanted layer. (author)

Analysis of As implantation profiles in silica by nuclear microanalysis and secondary ion emission

International Nuclear Information System (INIS)

Dieumegard, D.; Croset, M.; Cohen, C.; Lhoir, A.; Rigo, S.; Chaumont, J.

1974-01-01

Results obtained from analysis using, either the method of elastic backscattering of light or semi-heavy ions ( 4 He + , 14 N + ) about one MeV energy, or the secondary ion emission method are compared. The choice of As implanted Si is explained by the following reasons: As is an element relatively heavy in comparison with Si, that allows an analysis to be effected on a few thousands Angstroems depth in silica using elastic backscattering; the silica chosen as substrate being an amorphous material allows channeling phenomena to the avoided during implantation and analysis [fr

Laws of phase formation in ion-implanted metals

International Nuclear Information System (INIS)

Kazdaev, H.R.; Abylkhalykova, R.B.; Skakov, M.K.

2004-01-01

Full text: Main laws of ordered structures formation at molybdenum implantation by elements forming phases of introduction (B, C, N, 0, Si, P, S) are discovered in this work. According to them the character of structural and phase transformations in molybdenum at ion implantation is determined not by kinetic parameters of bombarding particles and their chemical activity but by size factor η x/Me (ratio of nuclear radii of introduced elements and atoms of a matrix). At change of its meaning in the certain limits the following can be observed: superstructures formation (η x/Mo x/Mo x/Mo >0.69). In the latter case at the further implantation doze increasing recrystallization of molybdenum monocrystalline layers amorphized during previous bombarding with chemical connection formation takes place, characterized by us as ion-inducted synthesis. The phenomenon discovered on the samples implanted by phosphorus ions. As the result, the high-temperature phase of molybdenum monophosphide MoP having densely situated lattice was synthesized. The complete confirmation of the main laws of structural and phased transformations at ion implantation established by results on molybdenum monocrystals with OCC lattice was achieved at realization of similar researches on the other transitive metal - zirconium which differs from molybdenum according to a number of attributes: a type of an initial lattice structural condition (large scaled polycrystal), presence of interparticle borders and high solubility of atmospheric impurities (nitrogen, carbon, oxygen). The discovered laws have proved to be true also according to ion implanted samples of monocrystal tungsten and polycrystal tantalum

Phosphorus in Agriculture : 100 % Zero

NARCIS (Netherlands)

Schnug, Ewald; De Kok, Luit J.

2016-01-01

Phosphorus is essential for all living organisms, reserves in geogenic deposits are finite, and phosphorus nutrient mining and oversupply are common phenomenons on agricultural soils. Only if the agricultural phosphorus cycle can be closed and the fertilized nutrient been utilized completely,

Theoretical predictions of the lateral spreading of implanted ions

International Nuclear Information System (INIS)

Ashworth, D.G.; Oven, R.

1986-01-01

The theoretical model and computer program (AAMPITS-3D) of Ashworth and co-workers for the calculation of three-dimensional distributions of implanted ions in multi-element amorphous targets are extended to show that the lateral rest distribution is gaussian in a form with a lateral standard deviation (lateral-spread function) which is a function of depth beneath the target surface. A method is given whereby this function may be accurately determined from a knowledge of the projected range and chord range rest distribution functions. Examples of the lateral-spread function are given for boron, phosphorus and arsenic ions implanted into silicon and a detailed description is given of how the lateral-spread function may be used in conjunction with the projected range rest distribution function to provide a fully three-dimensional rest distribution of ions implanted into amorphous targets. Examples of normalised single ion isodensity contours computed from AMPITS-3D are compared with those obtained using the previous assumption of a lateral standard deviation which was independent of distance beneath the target surface. (author)

Phosphorus poisoning in waterfowl

Science.gov (United States)

Coburn, D.R.; DeWitt, J.B.; Derby, J.V.; Ediger, E.

1950-01-01

Black ducks and mallards were found to be highly susceptible to phosphorus poisoning. 3 mg. of white phosphorus per kg. of body weight given in a single dose resulted in death of a black duck in 6 hours. Pathologic changes in both acute and chronic poisoning were studied. Data are presented showing that diagnosis can be made accurately by chemical analysis of stored tissues in cases of phosphorus poisoning.

Phosphorus oxide gate dielectric for black phosphorus field effect transistors

Science.gov (United States)

Dickerson, W.; Tayari, V.; Fakih, I.; Korinek, A.; Caporali, M.; Serrano-Ruiz, M.; Peruzzini, M.; Heun, S.; Botton, G. A.; Szkopek, T.

2018-04-01

The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence efficiency of exfoliated bP flakes. We apply phosphorus oxide passivation in the fabrication of bP field effect transistors using a gate stack consisting of a POx layer grown by reactive ion etching followed by atomic layer deposition of Al2O3. We observe room temperature top-gate mobilities of 115 cm2 V-1 s-1 in ambient conditions, which we attribute to the low defect density of the bP/POx interface.

Sewage-effluent phosphorus: A greater risk to river eutrophication than agricultural phosphorus?

International Nuclear Information System (INIS)

Jarvie, Helen P.; Neal, Colin; Withers, Paul J.A.

2006-01-01

Phosphorus (P) concentrations from water quality monitoring at 54 UK river sites across seven major lowland catchment systems are examined in relation to eutrophication risk and to the relative importance of point and diffuse sources. The over-riding evidence indicates that point (effluent) rather than diffuse (agricultural) sources of phosphorus provide the most significant risk for river eutrophication, even in rural areas with high agricultural phosphorus losses. Traditionally, the relative importance of point and diffuse sources has been assessed from annual P flux budgets, which are often dominated by diffuse inputs in storm runoff from intensively managed agricultural land. However, the ecological risk associated with nuisance algal growth in rivers is largely linked to soluble reactive phosphorus (SRP) concentrations during times of ecological sensitivity (spring/summer low-flow periods), when biological activity is at its highest. The relationships between SRP and total phosphorus (TP; total dissolved P + suspended particulate P) concentrations within UK rivers are evaluated in relation to flow and boron (B; a tracer of sewage effluent). SRP is the dominant P fraction (average 67% of TP) in all of the rivers monitored, with higher percentages at low flows. In most of the rivers the highest SRP concentrations occur under low-flow conditions and SRP concentrations are diluted as flows increase, which is indicative of point, rather than diffuse, sources. Strong positive correlations between SRP and B (also TP and B) across all the 54 river monitoring sites also confirm the primary importance of point source controls of phosphorus concentrations in these rivers, particularly during spring and summer low flows, which are times of greatest eutrophication risk. Particulate phosphorus (PP) may form a significant proportion of the phosphorus load to rivers, particularly during winter storm events, but this is of questionable relevance for river eutrophication

Effect of phosphorus sources on phosphorus and nitrogen utilization by three sweet potato cultivars

International Nuclear Information System (INIS)

Montanez, A.; Zapata, F.; Kumarasinghe, K.S.

1996-01-01

A greenhouse experiment was conducted at the FAO/IAEA Agriculture and Biotechnology Laboratory in Seibersdorf, Austria using three sweet potato cultivars, TIS 2, TIS 3053 and TIS 1487. The three sweet potato cultivars were grown at two levels of phosphorus (0 kg P/kg soil and 60 kg P/kg soil). The fertilizer treatments consisted of two sources of phosphorus, Gafza rock Phosphate and triple super phosphate with 14.19 and 19.76% total phosphorus, respectively. 15 N labelled urea was used to study the nitrogen recovery in tubers from the applied nitrogen fertilizer. The results from these preliminary studies indicate that there is considerable genotypic variation among cultivars in the efficiency with which phosphorus and nitrogen are taken up and used to produce biomass. Their response to different sources of phosphorus are also variable. TIS-2 and TIS-1487 have a greater ability to absorb phosphorus from Gafza rock phosphate and produce higher tube yields indicating their greater potential for using alternative sources of natural phosphate fertilizers more effectively. Gafza rock phosphate also increased accumulation of nitrogen in TIS-1487, a characteristic which will place this cultivar at an advantage when growing in soils low in nitrogen. On an overall basis taking into account tuber yield, phosphorus use efficiency, and nitrogen use efficiency, TIS-2 may be considered the better candidate for introduction into soils poor in resources particularly phosphorus. This study was conducted with a limited number of cultivars due to limitation in the availability of germplasma. In spite of this, the differences in their abilities for phosphorus and nitrogen uptake and use are clearly visible which justifies large scale screening experiments using a broader germplasm base, in the future. (author). 14 refs, 1 fig., 3 tabs

Effect of phosphorus sources on phosphorus and nitrogen utilization by three sweet potato cultivars

Energy Technology Data Exchange (ETDEWEB)

Montanez, A; Zapata, F [FAO/IAEA Agriculture and Biotechnology Lab., Seibersdorf (Austria). Soils Science Unit; Kumarasinghe, K S [Joint FAO/IAEA Div. of Nuclear Techniques in Food and Agriculture, Vienna (Austria). Soil Fertility, Irrigation and Crop Production Section

1996-07-01

A greenhouse experiment was conducted at the FAO/IAEA Agriculture and Biotechnology Laboratory in Seibersdorf, Austria using three sweet potato cultivars, TIS 2, TIS 3053 and TIS 1487. The three sweet potato cultivars were grown at two levels of phosphorus (0 kg P/kg soil and 60 kg P/kg soil). The fertilizer treatments consisted of two sources of phosphorus, Gafza rock Phosphate and triple super phosphate with 14.19 and 19.76% total phosphorus, respectively. {sup 15}N labelled urea was used to study the nitrogen recovery in tubers from the applied nitrogen fertilizer. The results from these preliminary studies indicate that there is considerable genotypic variation among cultivars in the efficiency with which phosphorus and nitrogen are taken up and used to produce biomass. Their response to different sources of phosphorus are also variable. TIS-2 and TIS-1487 have a greater ability to absorb phosphorus from Gafza rock phosphate and produce higher tube yields indicating their greater potential for using alternative sources of natural phosphate fertilizers more effectively. Gafza rock phosphate also increased accumulation of nitrogen in TIS-1487, a characteristic which will place this cultivar at an advantage when growing in soils low in nitrogen. On an overall basis taking into account tuber yield, phosphorus use efficiency, and nitrogen use efficiency, TIS-2 may be considered the better candidate for introduction into soils poor in resources particularly phosphorus. This study was conducted with a limited number of cultivars due to limitation in the availability of germplasma. In spite of this, the differences in their abilities for phosphorus and nitrogen uptake and use are clearly visible which justifies large scale screening experiments using a broader germplasm base, in the future. (author). 14 refs, 1 fig., 3 tabs.

TEM study of the ion beam induced damage during 14 kev P+ implantation in silicon

International Nuclear Information System (INIS)

Rubanov, S.; Tamanyan, G.; Hudson, F.; Jamieson, D.N.; McCallum, J.C.; Prawer, S.

2005-01-01

The proposed silicon-based quantum computer architecture comprises an array of phosphorus donor atoms (qubits) positioned with nanometre accuracy beneath the surface of a semiconductor host, using a single ion implantation technique. The average depth of the implanted ions (the projected range R p ), lateral range R p 1, and the distribution of ions about that depth can be approximated as two-dimensional Gaussian with standard deviation ΔR p and ΔR p 1 (lateral straggle). Using transmission electron microscopy (TEM) we studied ion beam induced damage after 14 keV P + implantation in Si. The TEM images allowed us to compare the depth of the amorphous cluster formation to R p , R p 1, ΔR p 1 calculated from SRIM and hence determine evidence for the limitation on the accuracy of the position of the implanted ions imposed by straggling. (author). 4 refs., 3 figs

Structural and compositional characterization of LiNbO{sub 3} crystals implanted with high energy iron ions

Energy Technology Data Exchange (ETDEWEB)

Sada, C., E-mail: cinzia.sada@unipd.i [Universita di Padova and CNISM, Dipartimento di Fisica, Via Marzolo 8, 35131 Padova (Italy); Argiolas, N.; Bazzan, M.; Ciampolillo, M.V.; Zaltron, A.M.; Mazzoldi, P. [Universita di Padova and CNISM, Dipartimento di Fisica, Via Marzolo 8, 35131 Padova (Italy); Agarwal, D.C.; Avastshi, D.K. [Inter-University Accelerator Centre, Post Box-10502, New Delhi 110067 (India)

2010-10-01

Iron ions were implanted with a total fluence of 6 x 10{sup 17} ions/m{sup 2} into lithium niobate crystals by way of a sequential implantation at different energies of 95, 100 and 105 MeV respectively through an energy retarder Fe foil to get a uniform Fe doping of about few microns from the surface. The implanted crystals were then annealed in air in the range 200-400 {sup o}C for different durations to promote the crystalline quality that was damaged by implantation. In order to understand the basic phenomena underlying the implantation process, compositional in-depth profiles obtained by the secondary ion mass spectrometry were correlated to the structural properties of the implanted region measured by the high resolution X-ray diffraction depending on the process parameters. The optimised preparation conditions are outlined in order to recover the crystalline quality, essential for integrated photorefractive applications.

Ion Beam Materials Analysis and Modifications at keV to MeV Energies at the University of North Texas

Science.gov (United States)

Rout, Bibhudutta; Dhoubhadel, Mangal S.; Poudel, Prakash R.; Kummari, Venkata C.; Lakshantha, Wickramaarachchige J.; Manuel, Jack E.; Bohara, Gyanendra; Szilasi, Szabolcs Z.; Glass, Gary A.; McDaniel, Floyd D.

2014-02-01

The University of North Texas (UNT) Ion Beam Modification and Analysis Laboratory (IBMAL) has four particle accelerators including a National Electrostatics Corporation (NEC) 9SDH-2 3 MV tandem Pelletron, a NEC 9SH 3 MV single-ended Pelletron, and a 200 kV Cockcroft-Walton. A fourth HVEC AK 2.5 MV Van de Graaff accelerator is presently being refurbished as an educational training facility. These accelerators can produce and accelerate almost any ion in the periodic table at energies from a few keV to tens of MeV. They are used to modify materials by ion implantation and to analyze materials by numerous atomic and nuclear physics techniques. The NEC 9SH accelerator was recently installed in the IBMAL and subsequently upgraded with the addition of a capacitive-liner and terminal potential stabilization system to reduce ion energy spread and therefore improve spatial resolution of the probing ion beam to hundreds of nanometers. Research involves materials modification and synthesis by ion implantation for photonic, electronic, and magnetic applications, micro-fabrication by high energy (MeV) ion beam lithography, microanalysis of biomedical and semiconductor materials, development of highenergy ion nanoprobe focusing systems, and educational and outreach activities. An overview of the IBMAL facilities and some of the current research projects are discussed.

SEQUENTIAL ELECTRODIALYTIC EXTRACTION OF PHOSPHORUS COMPOUNDS

DEFF Research Database (Denmark)

2017-01-01

The present invention relates to an apparatus for electrodialytic extraction of phosphorus from a particulate material in suspension and to a method for electrodialytic phosphorus recovery, which uses the apparatus. The method may be applied for wastewater treatment, and/or treatment of particulate...... material rich in phosphorus. The present invention provides an apparatus for electrodialytic extraction of phosphorus from a particulate material comprising acidic and/or alkaline soluble phosphorus compounds, in suspension, comprising: • a first electrodialytic cell comprising a first anolyte compartment...

Phosphorus containing sintered alloys (review)

International Nuclear Information System (INIS)

Muchnik, S.V.

1984-01-01

Phosphorus additives are considered for their effect on the properties of sintered alloys of different applications: structural, antifriction, friction, magnetic, hard, superhard, heavy etc. Data are presented on compositions and properties of phosphorus-containing materials produced by the powder metallurgy method. Phosphorus is shown to be an effective activator of sintering in some cases. When its concentration in the material is optimal it imparts the material such properties as strength, viscosity, hardness, wear resistance. Problems concerning powder metallurgy of amorphous phosphorus-containing alloys are reported

Phosphorus and the dairy cow

OpenAIRE

Ekelund, Adrienne

2003-01-01

The general aim of the present work was to investigate phosphorus balance in the dairy cow, with reference to the amount and source of phosphorus. Furthermore, biochemical bone markers were used to study the bone turnover during the lactation and dry period. Phosphorus is located in every cell of the body and has more known functions than any other mineral element in the animal body. Phosphorus is also an important constituent of milk, and is therefore required in large amounts in a high yiel...

Study of crystal damage by ion implantation using micro RBS/channeling

International Nuclear Information System (INIS)

Grambole, D.; Herrmann, F.; Heera, V.; Meijer, J.

2007-01-01

The combination of microbeam implantation and in-situ micro RBS/channeling analysis in the Rossendorf nuclear microprobe facility enables crystal damage studies with high current densities not achievable in standard ion implantation experiments. Si(1 0 0) samples were implanted with 600 keV Si + ions and a fluence of 1 x 10 16 cm -2 . Using a beam spot of 200 μm x 200 μm current densities from 4 to 120 μA/cm 2 were obtained. The substrate temperature was varied between RT and 265 deg. C. The implanted regions were subsequently analysed by micro RBS/channeling with a 3 MeV He + beam having a spot size of 50 μm x 50 μm. Crystal damage up to amorphisation was observed in dependence on the substrate temperature. Above a critical temperature T C no amorphisation occurs. T C was determined for each series of samples implanted with the same ion current density j. It was found that the empirical Arrhenius relation j ∼ exp(-E a /kT C ), known from standard implantation experiments, is also valid at high current densities. The observed Arrhenius law can be derived from a model of epitaxial crystallisation stimulated by defect diffusion

Homojunction silicon solar cells doping by ion implantation

Science.gov (United States)

Milési, Frédéric; Coig, Marianne; Lerat, Jean-François; Desrues, Thibaut; Le Perchec, Jérôme; Lanterne, Adeline; Lachal, Laurent; Mazen, Frédéric

2017-10-01

Production costs and energy efficiency are the main priorities for the photovoltaic (PV) industry (COP21 conclusions). To lower costs and increase efficiency, we are proposing to reduce the number of processing steps involved in the manufacture of N-type Passivated Rear Totally Diffused (PERT) silicon solar cells. Replacing the conventional thermal diffusion doping steps by ion implantation followed by thermal annealing allows reducing the number of steps from 7 to 3 while maintaining similar efficiency. This alternative approach was investigated in the present work. Beamline and plasma immersion ion implantation (BLII and PIII) methods were used to insert n-(phosphorus) and p-type (boron) dopants into the Si substrate. With higher throughput and lower costs, PIII is a better candidate for the photovoltaic industry, compared to BL. However, the optimization of the plasma conditions is demanding and more complex than the beamline approach. Subsequent annealing was performed on selected samples to activate the dopants on both sides of the solar cell. Two annealing methods were investigated: soak and spike thermal annealing. Best performing solar cells, showing a PV efficiency of about 20%, was obtained using spike annealing with adapted ion implantation conditions.

Fertilizer phosphorus in some Finnish soils

Directory of Open Access Journals (Sweden)

Armi Kaila

1961-01-01

Full Text Available In the present paper it is tried to trace the fate of fertilizer phosphorus in soil by comparing the analyses of soils from treated and untreated plots of field trials. This indirect approach cannot be expected to provide exact values, but it is likely to give an approximate answer. The results reported above do not in any marked degree change our present conception of the forms in which fertilizer phosphorus accumulates in soils. In the acid soils studied (pH 4—6.4 in 0.02 N CaCl2 superphosphate tended to increase the fractions which were extracted by NH4F or NaOH. Hyperphosphate phosphorus was mostly found in the acid-soluble fraction. During a longer period of dressing with phosphate an increase in the organic phosphorus content of a peat soil could be detected. In the incubation experiments the mineralization of organic phosphorus occurred at a higher rate in the samples from the plots treated with superphosphate than in those from the untreated one. It might be supposed that the organic phosphorus mineralized mainly originated from the plant residues. It seems that the fractionation method developed by CHANG and JACKSON (4 for the estimation of discrete forms of soil phosphorus is not quite satisfactory for tracing the fertilizer phosphorus in soils recently dressed with phosphates. In particular, it may be fallacious to conclude that the fraction extracted by NH4F would only represent phosphorus bound to aluminium and its compounds. At least in the absence of soil, a large part of phosphorus in dicalcium phosphate dihydrate falls into this fraction, and also a small amount of hyperphosphate phosphorus may be found in it. The test values for »available» phosphorus showed the effect of fertilizers in accordance with previous observations (9, 13. Acetic acid soluble P revealed the treatment with hyperphosphate, but only slightly the application of superphosphate. The test value for the sorbed P of BRAY and KURTZ (2, or phosphorus

Physical and chemical characterization of surfaces of nitrogen implanted steels

International Nuclear Information System (INIS)

Moncoffre, N.

1986-01-01

The studied steels are of industrial type (42CD4, 100C6, Z200C13). Very often, the low carbon steel XCO6 has been used as a reference material. The aim of the research is to understand and to explain the mechanisms of wear resistance to improvement. A good characterization of the implanted layer is thus necessary. It implies to establish the distribution profiles of the implanted ions to identify the chemical and structural state of the phases created during implantation as a function of various implantation parameters (dose, temperature). Temperature is the particularly parameter. Its influence is put in evidence both during implantation and during annealings under vacuum. Nitrogen distribution profiles are performed thanks to the non destructive 15 N(p,αγ) 12 C nuclear reaction. The chemical state of the Fe-N phases formed by implantation is determined using first Electron Conversion Moessbauer Spectroscopy and secondly, as a complement, using grazing angle X ray diffraction. The detected compounds are ε-nitrides, ε-carbonitrides, (N) - martensite and α-Fe 16 N 2 whose evolution is carefully followed versus temperature. The diffraction technique reveals a texture of the implanted layer. This preferentiel orientation is found to be temperature dependent but dose independent. The carbon presence at the surface is studied as a function of implantation conditions (vacuum, temperature, dose). Carbon profiling is obtained using α backscattering ( 12 C(α,α') reaction at 5,7 MeV). Thus is achieved a complete characterization of the implanted zone whose evolution as a function of implantation parameters (especially temperature) is correlated with tribological results [fr

Deep penetration of polonium implanted in cadmium sulfide

International Nuclear Information System (INIS)

Weinmann, E.

1975-01-01

The distribution of 25 keV 210 Po implanted into CdS platelets was determined by means of energy analysis of the α-particles emitted by the 210 Po. Two samples were implanted along an axial channeling direction, and one along a planar channeling direction. The resulting distributions did not conform to any of the existing range theories or, in the case of axial channeling, to existing diffusion theories. A new diffusion model was formulated and fitted to the experimental data. Good agreement was obtained between this model and experiment for both the axial and the planar channeling conditions. The stopping power of CdS for He ions was measured as a preliminary step to the Po distribution measurement. A new technique was used which consisted in measuring the energy spectrum of either He ions backscattered from Bi implanted in CdS or of α-particles emitted by 210 Po implanted in CdS. A thin layer was then etched off the surface of the sample and the energy spectrum was measured again. The stopping power was calculated from these two spectra and the known thickness of the removed layer. These measurements and calculations were made for energies ranging from 0.963 to 5.3 MeV with accuracies between 12 percent and 16 percent

Comparison of proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots

Energy Technology Data Exchange (ETDEWEB)

Barik, S; Tan, H H; Jagadish, C [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

2007-05-02

We report and compare proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots (QDs). After ion implantation at 20-300 deg. C, the QDs are rapid thermally annealed at 850 deg. C for 30 s. Proton implantation induces less energy shift than P ion implantation for a given concentration of atomic displacements due to the more efficient dynamic annealing of the defects created by protons. The implantation-induced energy shift reaches a maximum value of about 260 meV for a dose of 5 x 10{sup 12} ions cm{sup -2} in the P ion implanted QDs, which also show narrower PL linewidths compared to the proton implanted QDs. We also report the effects of an InGaAs top cap layer on the ion implantation-induced QD intermixing and show that defect production and annihilation processes evolve differently in InGaAs and InP layers and vary with the implantation temperature. When the implantation is performed at higher temperatures, the energy shift of the P ion implanted QDs capped with an InP layer increases due to the reduction in larger defect cluster formation at higher temperatures, while the energy shift of the proton implanted QDs decreases due to increased dynamic annealing irrespective of their cap layers.

Homo-epitaxial diamond film growth on ion implanted diamond substrates

Energy Technology Data Exchange (ETDEWEB)

Weiser, P S; Prawer, S; Nugent, K W; Bettiol, A A; Kostidis, L I; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1997-12-31

The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 {mu}m{sup 2}. After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs.

Homo-epitaxial diamond film growth on ion implanted diamond substrates

Energy Technology Data Exchange (ETDEWEB)

Weiser, P.S.; Prawer, S.; Nugent, K.W.; Bettiol, A.A.; Kostidis, L.I.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1996-12-31

The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 {mu}m{sup 2}. After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs.

Homo-epitaxial diamond film growth on ion implanted diamond substrates

International Nuclear Information System (INIS)

Weiser, P.S.; Prawer, S.; Nugent, K.W.; Bettiol, A.A.; Kostidis, L.I.; Jamieson, D.N.

1996-01-01

The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 μm 2 . After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs

Investigation of Mn Implanted LiNbO3 applying electron paramagnetic resonance technique

International Nuclear Information System (INIS)

Darwish, A.; Ila, D.; Poker, D.B.; Hensley, D.K.

1997-10-01

The effect of ion implantation on the LiNbO 3 crystal is studied using electron paramagnetic resonance spectroscopy (EPR). EPR measurements on these crystals were performed as a function of ion species Mn and Fe and fluence at room temperature. Also the effect of the laser illumination on the EPR signal was determined by illuminating the crystal in situ and measuring the decay and growth of the EPR signal. LiNbO 3 :Mn 2+ at a depth of approximately 200 nm was formed by implantation of 2.5 x 10 14 Mncm 2 and 1 x 10 17 Mn/cm 2 at 2 MeV. The implanted samples were compared with bulk doped crystals. It was found that the decay and growth of Mn EPR for the implanted crystal is very small compared with the bulk doped LiNbO 3 :Mn crystal. This was found to be primarily due to the spin concentration on the crystals. On the other, hand the decay time of the high fluence is about 40% slower than the decay of the low fluence implanted crystal

Positron-electron autocorrelation function study of E-center in phosphorus-doped silicon

International Nuclear Information System (INIS)

Ho, K.F.; Beling, C.D.; Fung, S.; Biasini, M.; Ferro, G.; Gong, M.

2004-01-01

Two dimensional fourier transformed angular correlation of annihilation radiation (2D-FT-ACAR) spectra have been taken for 10 19 cm -3 phosphorus-doped Si in the as grown state and after being subjected to 1.8 MeV e - fluences of 2 x 10 18 cm -2 . In the spectra of the irradiated samples, the zero-crossing points are observed to displace outwards from the bravais lattice positions. It is suggested that this results from positrons annihilating with electrons in localized orbitals at the defect site. An attempt is made to extract just the component of the defect's positron-electron autocorrelation function that relates to the localized defect orbitals. It is argued that such an extracted real-space function may provide a suitable means for obtaining a mapping of localized defect orbitals. (orig.)

The influence of silver-ion doping using ion implantation on the luminescence properties of Er–Yb silicate glasses

Energy Technology Data Exchange (ETDEWEB)

Stanek, S., E-mail: stanislav.stanek@vscht.cz [Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology, Technicka 5, 16628 Prague (Czech Republic); Nekvindova, P.; Svecova, B.; Vytykacova, S.; Mika, M. [Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology, Technicka 5, 16628 Prague (Czech Republic); Oswald, J. [Institute of Physics, Academy of Science of the Czech Republic, Cukrovarnicka 10/112, 162 00 Prague (Czech Republic); Mackova, A.; Malinsky, P. [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 25068 Rez (Czech Republic); Department of Physics, Faculty of Science, J.E. Purkinje University, Ceske mladeze 8, 40096 Usti nad Labem (Czech Republic); Spirkova, J. [Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology, Technicka 5, 16628 Prague (Czech Republic)

2016-03-15

A set of zinc-silicate glasses with different ratios of erbium and ytterbium was fabricated. To achieve Ag-rich thin films in a sub-surface layer, ion-implantation technique at an energy of 1.2 MeV and 1.7 MeV with a fluence of 1 × 10{sup 16} cm{sup −2} was used. Post-implantation annealing was also applied. Changes in the spectroscopic and lasing properties of erbium ions as a function of implantation fluence of silver were studied with the aim to assess the positive effect of silver as a sensitiser of erbium luminescence. Therefore, absorption spectra in the visible range as well as luminescence spectra in the near-infrared range were measured and partially also the {sup 4}I{sub 11/2}–{sup 4}I{sub 15/2} transition of the erbium ion was studied. The results showed that silver positively influenced luminescence intensity at 1530 nm by increasing it almost three times. The biggest increase was achieved in glass with the highest concentration of erbium. Luminescence lifetime was not significantly influenced by the presence of silver and still remained around 10 ms.

Phosphorus Regulation in Chronic Kidney Disease.

Science.gov (United States)

Suki, Wadi N; Moore, Linda W

2016-01-01

Serum phosphorus levels stay relatively constant through the influence of multiple factors-such as parathyroid hormone, fibroblast growth factor 23, and vitamin D-on the kidney, bone, and digestive system. Whereas normal serum phosphorus ranges between 3 mg/dL to 4.5 mg/dL, large cross-sectional studies have shown that even people with normal kidney function are sometimes found to have levels ranging between 1.6 mg/dL and 6.2 mg/dL. While this may partially be due to diet and the factors mentioned above, total understanding of these atypical ranges of serum phosphorus remains uncertain. Risks for bone disease are high in people aged 50 and older, and this group comprises a large proportion of people who also have chronic kidney disease. Consuming diets low in calcium and high in phosphorus, especially foods with phosphate additives, further exacerbates bone turnover. Existing bone disease increases the risk for high serum phosphorus, and higher serum phosphorus has been associated with increased adverse events and cardiovascular-related mortality both in people with chronic kidney disease and in those with no evidence of disease. Once kidney function has deteriorated to end-stage disease (Stage 5), maintaining normal serum phosphorus requires dietary restrictions, phosphate-binding medications, and dialysis. Even so, normal serum phosphorus remains elusive in many patients with Stage 5 kidney disease, and researchers are testing novel targets that may inhibit intestinal transport of phosphorus to achieve better phosphate control. Protecting and monitoring bone health should also aid in controlling serum phosphorus as kidney disease advances.

Ion implantation-induced defects in Oxide Dispersion Strengthened (ODS) steel probed by positron annihilation spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Anwand, Wolfgang; Butterling, Maik; Brauer, Gerhard; Wagner, Andreas [HZDR, Institut fuer Strahlenphysik (Germany); Richter, Astrid [Technische Hochschule Wildau (Germany); Koegler, Reinhard [HZDR, Institut fuer Ionenstrahlphysik und Materialforschung (Germany); Chen, C.L. [I-Shou University, Kaohsiung (China)

2012-07-01

ODS steel is a promising candidate for an application in fission and fusion power plants of a new generation because of its advantageous properties as stability and temperature resistance. A microscopic understanding of the physical reasons of the mechanical and thermal properties as well as the behaviour of the material under irradiation is an important pre-condition for such applications. The investigated ODS FeCrAl alloy *PM2000* has been produced in a powder metallurgical way. Neutron-induced damage at ODS steel was simulated by He{sup +} and Fe{sup 2+} co-implantation with energies of 2.5 MeV and 400 keV, respectively, and different fluences. The implantation has been carried out with a dual ion beam which enables a simultaneous implantation of both ion types. Thereby the Fe{sup 2+} implantation was used for the creation of radiation defects, and He{sup +} was implanted in order to reproduce He bubbles as they are expected to appear by neutron irradiation. The implantation-induced damage was investigated by depth dependent Doppler broadening measurements using a variable energy slow positron beam.

Luminescence of natural IIa diamond implanted with nitrogen ions

International Nuclear Information System (INIS)

Varichenko, V.S.; Zaitsev, A.M.; Stelmakh, V.F.

1986-01-01

Investigations on the influence of defect environment in the irradiated diamond lattice are presented. The N + implantation with energies from 60 keV up to 60 MeV was used both as method of introducing nitrogen containing defects into the diamond and as a good tool to create different environment of these defects. Photoluminescence, cathodoluminescence, and annealing measurements show that the action of defect environment is revealed through the effective pressure affecting the thermal stability of defects and their inhomogeneous distortion

Phosphorus and Nutrition in Chronic Kidney Disease

Directory of Open Access Journals (Sweden)

Emilio González-Parra

2012-01-01

Full Text Available Patients with renal impairment progressively lose the ability to excrete phosphorus. Decreased glomerular filtration of phosphorus is initially compensated by decreased tubular reabsorption, regulated by PTH and FGF23, maintaining normal serum phosphorus concentrations. There is a close relationship between protein and phosphorus intake. In chronic renal disease, a low dietary protein content slows the progression of kidney disease, especially in patients with proteinuria and decreases the supply of phosphorus, which has been directly related with progression of kidney disease and with patient survival. However, not all animal proteins and vegetables have the same proportion of phosphorus in their composition. Adequate labeling of food requires showing the phosphorus-to-protein ratio. The diet in patients with advanced-stage CKD has been controversial, because a diet with too low protein content can favor malnutrition and increase morbidity and mortality. Phosphorus binders lower serum phosphorus and also FGF23 levels, without decreasing diet protein content. But the interaction between intestinal dysbacteriosis in dialysis patients, phosphate binder efficacy, and patient tolerance to the binder could reduce their efficiency.

The location and nature of accumulated phosphorus in seven sludges from activated sludge plants which exhibited enhanced phosphorus removal

International Nuclear Information System (INIS)

Buchan, L.

1981-01-01

Electron microscopy combined with the energy dispersive analysis of X-rays (EDX) has been used to examine the nature of the phosphorus accumulated in sludges from seven activated sludge plants exhibiting enhanced phosphorus removal. Large phosphorus accumulations were located in identical structures in the sludges examined. The phosphorus was located in large electron-dense bodies, within large bacterial cells which were characteristically grouped in clusters. The calcium:phosphorus ratio of these electron-dense bodies precluded them from being any form of calcium phosphate precipitate. Quantitative analysis indicated that the electron-dense bodies contained in excess of 30% phosphorus. The results obtained are supportive of a biological mechanism of enhanced phosphorus uptake in activated sludge

Phosphorus vacancy cluster model for phosphorus diffusion gettering of metals in Si

Energy Technology Data Exchange (ETDEWEB)

Chen, Renyu; Trzynadlowski, Bart; Dunham, Scott T. [Department of Electrical Engineering, University of Washington, Seattle, Washington 98195 (United States)

2014-02-07

In this work, we develop models for the gettering of metals in silicon by high phosphorus concentration. We first performed ab initio calculations to determine favorable configurations of complexes involving phosphorus and transition metals (Fe, Cu, Cr, Ni, Ti, Mo, and W). Our ab initio calculations found that the P{sub 4}V cluster, a vacancy surrounded by 4 nearest-neighbor phosphorus atoms, which is the most favorable inactive P species in heavily doped Si, strongly binds metals such as Cu, Cr, Ni, and Fe. Based on the calculated binding energies, we build continuum models to describe the P deactivation and Fe gettering processes with model parameters calibrated against experimental data. In contrast to previous models assuming metal-P{sub 1}V or metal-P{sub 2}V as the gettered species, the binding of metals to P{sub 4}V satisfactorily explains the experimentally observed strong gettering behavior at high phosphorus concentrations.

Peak Phosphorus: Clarifying the Key Issues of a Vigorous Debate about Long-Term Phosphorus Security

Directory of Open Access Journals (Sweden)

Stuart White

2011-10-01

Full Text Available This paper reviews the latest information and perspectives on global phosphorus scarcity. Phosphorus is essential for food production and modern agriculture currently sources phosphorus fertilizers from finite phosphate rock. The 2008 food and phosphate fertilizer price spikes triggered increased concerns regarding the depletion timeline of phosphate rock reserves. While estimates range from 30 to 300 years and are shrouded by lack of publicly available data and substantial uncertainty, there is a general consensus that the quality and accessibility of remaining reserves are decreasing and costs will increase. This paper clarifies common sources of misunderstandings about phosphorus scarcity and identifies areas of consensus. It then asks, despite some persistent uncertainty, what would it take to achieve global phosphorus security? What would a ‘hard-landing’ response look like and how could preferred ‘soft-landing’ responses be achieved?

Effect of ion implantation on thermal shock resistance of magnesia and glass

International Nuclear Information System (INIS)

Gurarie, V.N.; Williams, J.S.; Watt, A.J.

1995-01-01

Monocrystals of magnesia together with glass samples have been subjected to ion implantation prior to thermal shock testing in an impulse plasma of continuously varied intensity. Measurements of the separation between fragments have been used to estimate the surface temperature. Fracture and deformation characteristics of the surface layer are measured in ion implanted and unimplanted samples using optical and scanning electron microscopy. Implantation-induced near-surface damage is analysed by ion channeling using 2 MeV He + ions. Ion implantation is shown to modify the near-surface structure of magnesia samples by introducing damage, which makes crack initiation easier under thermal stresses. The fracture threshold and maximum crack density are shifted towards the lower temperature range. Ion implanted MgO crystals show a ten fold increase in surface crack density. An increased crack density results in a decreased degree of damage characterised by the depth of crack penetration. The thermal stress resistance parameter of glass samples is increased at relatively small doses and decreased at higher doses. The results suggest that crack density and the degree of fracture damage in brittle ceramics operating under thermal shock conditions can be effectively controlled by ion implantation which provides crack initiating defects in the near-surface region. 23 refs., 7 figs

Micro CT and human histological analysis of a peri-implant osseous defect grafted with porous titanium granules: a case report.

Science.gov (United States)

Wohlfahrt, Johan Caspar; Aass, Anne Merete; Ronold, Hans Jacob; Lyngstadaas, Stale Petter

2011-01-01

Treatment of peri-implant osseous defects represents a significant challenge for clinicians, and the need to evolve within predictable surgical procedures is important. This case report describes the surgical treatment and grafting with porous titanium granules (PTG) of one patient with a peri-implant osseous defect. The suggested thrombogenic properties of titanium are intriguing from the perspective of osseous reconstructive surgery. In an ongoing randomized clinical trial using PTG for treatment of peri-implant osseous defects, one patient with one test implant was excluded and scheduled for implant removal. The surgical therapy included open flap debridement with surface decontamination with 24% EDTA gel, grafting with PTG, and resubmersion of the implant. After 12 months of healing, the implant with surrounding tissues was excised en bloc and micro CT and histological analyses were performed. Analyses showed PTG in close contact with new bone and with bone growing both into the porosities of the graft material and onto the adjacent implant surface. Element analysis demonstrated calcium and phosphorus in the new tissue embedding the PTG and the implant. Int J Oral Maxillofac Implants 2011;26:e9-e14.

The emittance and brightness characteristics of negative ion sources suitable for MeV ion implantation

International Nuclear Information System (INIS)

Alton, G.D.

1987-01-01

This paper provides the description and beam properties of ion sources suitable for use with ion implantation devices. Particular emphasis is placed on the emittance and brightness properties of state-of-the-art, high intensity, negative ion sources based on the cesium ion sputter principle

Bone integration capability of nanopolymorphic crystalline hydroxyapatite coated on titanium implants

Directory of Open Access Journals (Sweden)

Suzuki T

2012-02-01

Full Text Available Masahiro Yamada*, Takeshi Ueno*, Naoki Tsukimura, Takayuki Ikeda, Kaori Nakagawa, Norio Hori, Takeo Suzuki, Takahiro OgawaLaboratory of Bone and Implant Sciences, The Weintraub Center for Reconstructive Biotechnology, Division of Advanced Prosthodontics, Biomaterials and Hospital Dentistry, UCLA School of Dentistry, Los Angeles, CA, USA *These authors contributed equally to this workAbstract: The mechanism by which hydroxyapatite (HA-coated titanium promotes bone–implant integration is largely unknown. Furthermore, refining the fabrication of nanostructured HA to the level applicable to the mass production process for titanium implants is challenging. This study reports successful creation of nanopolymorphic crystalline HA on microroughened titanium surfaces using a combination of flame spray and low-temperature calcination and tests its biological capability to enhance bone–implant integration. Sandblasted microroughened titanium implants and sandblasted + HA-coated titanium implants were subjected to biomechanical and histomorphometric analyses in a rat model. The HA was 55% crystallized and consisted of nanoscale needle-like architectures developed in various diameters, lengths, and orientations, which resulted in a 70% increase in surface area compared to noncoated microroughened surfaces. The HA was free from impurity contaminants, with a calcium/phosphorus ratio of 1.66 being equivalent to that of stoichiometric HA. As compared to microroughened implants, HA-coated implants increased the strength of bone–implant integration consistently at both early and late stages of healing. HA-coated implants showed an increased percentage of bone–implant contact and bone volume within 50 µm proximity of the implant surface, as well as a remarkably reduced percentage of soft tissue intervention between bone and the implant surface. In contrast, bone volume outside the 50 µm border was lower around HA-coated implants. Thus, this study

Measured neutron carbon kerma factors from 14.1 MeV to 18 MeV

International Nuclear Information System (INIS)

Deluca, P.M.; Barschall, H.H.; McDonald, J.C.

1985-01-01

For A-150 tissue-equivalent plastic, the total neutron kerma is dominated by the hydrogen kerma. Tissue kerma is inferred with reasonable accuracy by normalization to the kerma factor ratio between tissue and A-150 plastic. Because of the close match in the hydrogen abundance in these materials, the principal uncertainty is due to the kerma factors of carbon and oxygen. We have measured carbon kerma factor values of 0.183+-0.015 10 -8 cGy cm 2 and 0.210+-0.016 10 -8 cGy cm 2 at 14.1-MeV and 15-MeV neutron energy, respectively. A preliminary value of 0.297+-0.03 10 -8 cGy cm 2 has been determined at 17.9 MeV. A recent microscopic cross section measurement of the (n,n'3α) reaction in carbon at 14.1-MeV energy gives a kerma factor of 0.184+-0.019 10 -8 cGy cm 2 in agreement with the present result

Estimation of phosphorus flux in rivers during flooding.

Science.gov (United States)

Chen, Yen-Chang; Liu, Jih-Hung; Kuo, Jan-Tai; Lin, Cheng-Fang

2013-07-01

Reservoirs in Taiwan are inundated with nutrients that result in algal growth, and thus also reservoir eutrophication. Controlling the phosphorus load has always been the most crucial issue for maintaining reservoir water quality. Numerous agricultural activities, especially the production of tea in riparian areas, are conducted in watersheds in Taiwan. Nutrients from such activities, including phosphorus, are typically flushed into rivers during flooding, when over 90% of the yearly total amount of phosphorous enters reservoirs. Excessive or enhanced soil erosion from rainstorms can dramatically increase the river sediment load and the amount of particulate phosphorus flushed into rivers. When flow rates are high, particulate phosphorus is the dominant form of phosphorus, but sediment and discharge measurements are difficult during flooding, which makes estimating phosphorus flux in rivers difficult. This study determines total amounts of phosphorus transport by measuring flood discharge and phosphorous levels during flooding. Changes in particulate phosphorus, dissolved phosphorus, and their adsorption behavior during a 24-h period are analyzed owing to the fact that the time for particulate phosphorus adsorption and desorption approaching equilibrium is about 16 h. Erosion of the reservoir watershed was caused by adsorption and desorption of suspended solids in the river, a process which can be summarily described using the Lagmuir isotherm. A method for estimating the phosphorus flux in the Daiyujay Creek during Typhoon Bilis in 2006 is presented in this study. Both sediment and phosphorus are affected by the drastic discharge during flooding. Water quality data were collected during two flood events, flood in June 9, 2006 and Typhoon Bilis, to show the concentrations of suspended solids and total phosphorus during floods are much higher than normal stages. Therefore, the drastic changes of total phosphorus, particulate phosphorus, and dissolved phosphorus in

Total phosphorus, phytate phosphorus contents and the correlation of phytates with amylose in selected edible beans in Sri Lanka

Directory of Open Access Journals (Sweden)

Keerthana Sivakumaran

2018-02-01

Full Text Available Phytate a major anti nutritional factors in legumes and it accounts for larger portion of the total phosphorus, while limiting the bioavailablity of certain divalent cations to the human body. Legumes of eleven varieties cultivated in Sri Lanka, Mung bean (MI5, MI6, Cowpea (Waruni, MICP1, Bombay, Dhawala, ANKCP1, Soybean (MISB1, Pb1 and Horse gram (ANKBlack, ANKBrown were analyzed for phosphorus content and phytate content. Total phosphorus content was quantified by dry ashing followed by spectrophotometrical measurement of the blue colour intensity of acid soluble phosphate with sodium molybdate in the presence of ascorbic acid while phytate phosphorus using anion exchange chromatographic technique followed by spectrometrical measurement of the digested organic phosphorus and amylose content by Simple Iodine-Colourimetric method. Where the least value for phosphorus was observed 275.04 ±1.44 mg.100g-1 in ANKBlack (Horse gram and the highest in MISB1 (Soyabean with 654.94 ±0.05 mg.100g-1. The phytate phosphorus content (which is a ratio of phyate to total phosphorus was highest in Dhawala (Cowpea. The phytate phosphorus (which is a ratio of phyate to total phosphorus was highest in Dhawala with 67.42% and least in Bombay (Cowpea with 24.87%. The amylose content of the legumes was least in Pb1 with 8.71 ±0.13 mg.100mg-1 and the highest in MI6 22.58 ±0.71 mg.100mg-1. The correlation between phyate and total phosphorus was significant (p <0.05 and positive (r = 0.62. Similarly the correlation coefficient for phytate phosphorus and total phosphorus was significant (p <0.05 and positive (r = 0.63. Amylose content of legumes was significantly correlated negatively (p <0.05 with the total phytates content (r = -0.82.

Potential Phosphorus Mobilisation in Peat Soils

DEFF Research Database (Denmark)

Forsmann, Ditte M.; Kjærgaard, Charlotte

2012-01-01

Re-establishment of wetlands on peat soils containing phosphorus bound to iron(III)-oxides can lead to an undesirable phosphorus loss to the aquatic environment due to the reductive dissolution of iron(III)-oxides. Thus it is important to be able to assess the potential phosphorus mobilisation from...... peat soils before a re-establishment takes place. The potential phosphorus mobilisation from a peat soil depends not only on the geochemical characteristics but also on the redox conditions, the hydrological regime in the area as well as the hydro-physical properties of the soil. The hypothesis...... for this study is (i) the release of phosphorus in peat is controlled by the geochemistry; (ii) the mobilisation of phosphorus is controlled by both geochemistry and hydro-physics of the soil. For this study, 10 Danish riparian lowland areas with peat soil were selected based on their geochemical characteristics...

Assessing the Long Term Impact of Phosphorus Fertilization on Phosphorus Loadings Using AnnAGNPS

OpenAIRE

Yuan, Yongping; Bingner, Ronald L.; Locke, Martin A.; Stafford, Jim; Theurer, Fred D.

2011-01-01

High phosphorus (P) loss from agricultural fields has been an environmental concern because of potential water quality problems in streams and lakes. To better understand the process of P loss and evaluate the effects of different phosphorus fertilization rates on phosphorus losses, the USDA Annualized AGricultural Non-Point Source (AnnAGNPS) pollutant loading model was applied to the Ohio Upper Auglaize watershed, located in the southern portion of the Maumee River Basin. In this study, the ...

Measurements of pp→π+d between 398 MeV and 572 MeV

International Nuclear Information System (INIS)

Aebischer, D.; Favier, B.; Greeniaus, L.G.; Hess, R.; Junod, A.; Lechanoine, C.; Nikles, J.-C.; Rapin, D.; Werren, D.W.

1976-01-01

The reaction pp→π + d was studied at incident proton energies of 398, 455, 497, 530 and 572 MeV. Measurements of dsigma/dΩ at 455 and 572 MeV show the presence of pion d-waves in the pion-deuteron system. Asymmetry measurements yield similar conclusions. Total cross-section measurements agree with recent fits to earlier data. (Auth.)

The compaction of fused silica resulting from ion implantation

Energy Technology Data Exchange (ETDEWEB)

Johnson, C.M.; Ridgway, M.C. [Australian National Univ., Canberra, ACT (Australia); Leech, P.L. [Telstra Research Laboratories, Clayton, Victoria (Australia)

1996-12-31

Ion implantation of fused silica results in compaction and consequently an increase in refractive index. This method of modifying the near-surface region has been shown as a potential means for fabricating single mode channel waveguides. This study has measured the compaction of the implanted regions for Si implantations as a function of dose (2x10{sup 12} - 6x10{sup l6} ions/cm{sup 2}), energy (1-9 MeV) and post-implantation annealing temperature (200-900 degree C). For a given energy, a dose-dependence of the step height (depth of compacted region) is observed for doses less than {approx}10{sup 15} ions/cm{sup 2}. At higher doses the step height saturates. For a given dose, a linear trend is evident for the step height as a function of energy suggesting that the major mechanism for this compaction is electronic stopping. As the annealing temperature increases, the step height gradually decreases from {approx}0.1-0.2 {mu} to -10-20% of the original value. From the annealing data, it is possible to extract an activation energy of 0.08 eV associated with the thermal removal of the compacted region. 4 refs., 4 figs.

The compaction of fused silica resulting from ion implantation

Energy Technology Data Exchange (ETDEWEB)

Johnson, C M; Ridgway, M C [Australian National Univ., Canberra, ACT (Australia); Leech, P L [Telstra Research Laboratories, Clayton, Victoria (Australia)

1997-12-31

Ion implantation of fused silica results in compaction and consequently an increase in refractive index. This method of modifying the near-surface region has been shown as a potential means for fabricating single mode channel waveguides. This study has measured the compaction of the implanted regions for Si implantations as a function of dose (2x10{sup 12} - 6x10{sup l6} ions/cm{sup 2}), energy (1-9 MeV) and post-implantation annealing temperature (200-900 degree C). For a given energy, a dose-dependence of the step height (depth of compacted region) is observed for doses less than {approx}10{sup 15} ions/cm{sup 2}. At higher doses the step height saturates. For a given dose, a linear trend is evident for the step height as a function of energy suggesting that the major mechanism for this compaction is electronic stopping. As the annealing temperature increases, the step height gradually decreases from {approx}0.1-0.2 {mu} to -10-20% of the original value. From the annealing data, it is possible to extract an activation energy of 0.08 eV associated with the thermal removal of the compacted region. 4 refs., 4 figs.

Phosphorus dendrimers for nanomedicine.

Science.gov (United States)

Caminade, Anne-Marie

2017-08-31

From biomaterials to imaging, and from drug delivery to drugs by themselves, phosphorus-containing dendrimers offer a large palette of biological properties, depending essentially on their types of terminal functions. The most salient examples of phosphorus dendrimers used for the elaboration of bio-chips and of supports for cell cultures, for imaging biological events, and for carrying and delivering drugs or biomacromolecules are presented in this feature article. Several phosphorus dendrimers can be considered also as drugs per se (by themselves) in particular to fight against cancers, neurodegenerative diseases, and inflammation, both in vitro and in vivo. Toxicity assays are also reported.

Comparison of biological and genomic characteristics between a newly isolated mink enteritis parvovirus MEV-LHV and an attenuated strain MEV-L.

Science.gov (United States)

Mao, Yaping; Wang, Jigui; Hou, Qiang; Xi, Ji; Zhang, Xiaomei; Bian, Dawei; Yu, Yongle; Wang, Xi; Liu, Weiquan

2016-06-01

A virus isolated from mink showing clinical signs of enteritis was identified as a high virulent mink enteritis parvovirus (MEV) based on its biological characteristics in vivo and in vitro. Mink, challenged with this strain named MEV-LHV, exhibited severe pathological lesions as compared to those challenged with attenuated strain MEV-L. MEV-LHV also showed higher infection and replication efficiencies in vitro than MEV-L. Sequence of the complete genome of MEV-LHV was determined and analyzed in comparison with those in GenBank, which revealed that MEV-LHV shared high homology with virulent strain MEV SD12/01, whereas MEV-L was closely related to Abashiri and vaccine strain MEVB, and belonged to a different branch of the phylogenetic tree. The genomes of the two strains differed by insertions and deletions in their palindromic termini and specific unique mutations (especially VP2 300) in coding sequences which may be involved in viral replication and pathogenicity. The results of this study provide a better understanding of the biological and genomic characteristics of MEV and identify certain regions and sites that may be involved in viral replication and pathogenicity.

Effect of mycorrhiza on growth criteria and phosphorus nutrition of lettuce (Lactuca sativa L. under different phosphorus application rates

Directory of Open Access Journals (Sweden)

S. Fatih Ergin

2016-10-01

Full Text Available In this study, effect of mycorrhiza on growth criteria and phosphorus nutrition of lettuce (Lactuca sativa L. under different phosphorus fertilization rates were investigated. Phosphorus were added into growing media as 0, 50, 100 and 200 mg P2O5/kg with and without mycorrhiza applications. Phosphorus applications significantly increased yield criteria of lettuce according to the control treatment statistically. Mycorrhiza application also significantly increased plant diameter, plant dry weight and phosphor uptake by plant. The highest phosphorus uptakes by plants were determined in 200 mg P2O5/kg treatments as 88.8 mg P/pot with mycorrhiza and 83.1 mg P/pot without mycorrhiza application. In the control at 0 doses of phosphorus with mycorrhiza treatment, phosphorus uptake (69.9 mg P/pot, edible weight (84.36 g, dry weight (8.64 g and leaf number (28 of lettuce were higher than that (47.7 mg P/pot, 59.33 g, 6.75 g and 20, respectively in the control without mycorrhiza application. It was determined that mycorrhiza had positive effect on growth criteria and phosphorus nutrition by lettuce plant, and this effect decreased at higher phosphorus application rates.

Environmental Phosphorus Recovery Based on Molecular Bioscavengers

DEFF Research Database (Denmark)

Gruber, Mathias Felix

Phosphorus is a ubiquitous element of all known life and as such it is found throughout numerous key molecules related to various cellular functions. The supply of phosphorus is tightly linked to global food security, since phosphorus is used to produce agricultural fertilizers, without which...... it would not be possible to feed the world population. Sadly, the current supply of phosphorus is based on the gradual depletion of limited fossil reserves, and some estimates predict that within 15-25 years we will consume more phosphorus than we can produce. There is therefore a strong international...... pressure to develop sustainable phosphorus practices as well as new technologies for phosphorus recovery. Nature has spent billions of years refining proteins that interact with phosphates. This has inspired the present work where the overall ambitions are: to facilitate the development of a recovery...

Simple fabrication of back contact heterojunction solar cells by plasma ion implantation

Science.gov (United States)

Koyama, Koichi; Yamaguchi, Noboru; Hironiwa, Daisuke; Suzuki, Hideo; Ohdaira, Keisuke; Matsumura, Hideki

2017-08-01

A back-contact amorphous-silicon (a-Si)/crystalline silicon (c-Si) heterojunction is one of the most promising structures for high-efficiency solar cells. However, the patterning of back-contact electrodes causes the increase in fabrication cost. Thus, to simplify the fabrication of back-contact cells, we attempted to form p-a-Si/i-a-Si/c-Si and n-a-Si/i-a-Si/c-Si regions by the conversion of a patterned area of p-a-Si/i-a-Si/c-Si to n-a-Si/i-a-Si/c-Si by plasma ion implantation. It is revealed that the conversion of the conduction type can be realized by the plasma ion implantation of phosphorus (P) atoms into p-a-Si/i-a-Si/c-Si regions, and also that the quality of passivation can be kept sufficiently high, the same as that before ion implantation, when the samples are annealed at around 250 °C and also when the energy and dose of ion implantation are appropriately chosen for fitting to a-Si layer thickness and bulk c-Si carrier density.

Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays

KAUST Repository

Lin, S. S.

2009-11-11

We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of ∼140 meV Is identified by temperaturedependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application In high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices. © 2009 American Chemical Society.

Evidence for As lattice location and Ge bound exciton luminescence in ZnO implanted with $^{73}$As and $^{73}$Ge

CERN Document Server

Johnston, K; Henry, M O; McGlynn, E; Stachura, M

2011-01-01

The results of photoluminescence (PL) measurements performed on high quality single crystal ZnO implanted with radioactive (73)Ga and (73)As, both of which decay to stable (73)Ge, are presented. Identical effects are observed in the two cases, with a sharp line at 3.3225(5) eV found to grow in intensity in accordance with the growth rate of the Ge daughter atom populations. On the strength of the well-established result that Ga occupies Zn sites, we conclude from the identical outcomes for (73)Ga and (73)As implantations that implanted As also preferentially occupies Zn sites. This result supports the findings of others that As preferentially occupies the Zn rather than the O site in ZnO. The thermal quenching energy of the 3.3225(5) eV line is found to be only 2.9(1) meV in contrast to its large spectral shift of 53.4(1) meV with respect to the lowest energy free exciton. The PL is attributed to exciton recombination at neutral Ge double donors on Zn sites involving transitions that leave the donor in an exc...

Au{sup 3+} ion implantation on FTO coated glasses: Effect on structural, electrical, optical and phonon properties

Energy Technology Data Exchange (ETDEWEB)

Sahu, Bindu; Dey, Ranajit; Bajpai, P.K., E-mail: bajpai.pk1@gmail.com

2017-06-01

Highlights: • Effects of 11.00 MeV Au{sup 3+} ions implanted in FTO coated (thickness ≈300 nm) silicate glasses at varying fluence. • Metal clustering near the surface and subsurface region below glass-FTO interface changes electrical and optical properties significantly. • Ion implantation does not affect the crystalline structure of the coated films; however, the tetragonal distortion increases with increasing ion fluence. • Significant surface reconstruction takes place with ion beam fluence; The average roughness also decreases with increasing fluence. • The sheet resistivity increases with increasing fluence. • Raman analysis also corroborates the re-crystallization process inducing due to ion implantation. • Optical properties of the implanted surfaces changes significantly. - Abstract: Effects of 11.00 MeV Au{sup 3+} ions implanted in FTO coated (thickness ≈300 nm) silicate glasses on structural, electrical optical and phonon behavior have been explored. It has been observed that metal clustering near the surface and sub-surface region below glass-FTO interface changes electrical and optical properties significantly. Ion implantation does not affect the crystalline structure of the coated films; however, the unit cell volume decreases with increase in fluence and the tetragonal distortion (c/a ratio) also decreases systematically in the implanted samples. The sheet resistivity of the films increases from 11 × 10{sup −5} ohm-cm (in pristine) to 7.5 × 10{sup −4} ohm-cm for highest ion beam fluence ≈10{sup 15} ions/cm{sup 2}. The optical absorption decreases with increasing fluence whereas, the optical transmittance as well as reflectance increases with increasing fluence. The Raman spectra are observed at ∼530 cm{sup −1} and ∼1103 cm{sup −1} in pristine sample. The broad band at 530 cm{sup −1} shifts towards higher wave number in the irradiated samples. This may be correlated with increased disorder and strain relaxation in

Measured neutron carbon kerma factors from 14.1 MeV to 18 MeV

International Nuclear Information System (INIS)

Deluca, P.M. Jr.; Barschall, H.H.; Haight, R.C.; McDonald, J.C.

1984-01-01

For A-150 tissue-equivalent plastic, the total neutron kerma is dominated by the hydrogen kerma. Tissue kerma is inferred with reasonable accuracy by normalization to the kerma factor ratio between tissue and A-150 plastic. Because of the close match in the hydrogen abundance in these materials, the principal uncertainty is due to the kerma factors of carbon and oxygen. We have measured carbon kerma factor values of 0.183 +- 0.015 10 -8 cGy cm 2 and 0.210 +- 0.16 10 -8 cGy cm 2 at 14.1-MeV and 15-MeV neutron energy, respectively. A preliminary value of 0.297 +- 0.03 10 -8 cGy cm 2 has been determined at 17.9 MeV. A recent microscopic cross section measurement of the (n,n'3α) reaction in carbon at 14.1-MeV energy gives a kerma factor of 0.184 +- 0.019 10 8 cGy cm 2 in agreement with the present result. 9 refs., 4 figs., 2 tabs

Dynamics of implanted muons at low temperatures in white tin

International Nuclear Information System (INIS)

Solt, G.; Zimmermann, U.; Herlach, D.

2008-01-01

The low temperature lattice site of the implanted μ + particle and its subsequent delocalization at higher temperatures was investigated in single crystal white tin for 2 + was found to reside at the interstitial sites of type d. With increasing temperature thermally activated hopping sets in at T=48±2K, resulting in complete delocalization near 60 K. The activation energy for hopping, E a =113±15meV, is substantially higher than that found previously for the equally tetragonal indium

Surface depression of glass and surface swelling of ceramics induced by ion implantation

International Nuclear Information System (INIS)

Ikeyama, Masami; Saitoh, Kazuo; Nakao, Setsuo; Niwa, Hiroaki; Tanemura, Seita; Miyagawa, Yoshiko; Miyagawa, Souji

1994-01-01

By the measurement of the change of the surface shapes of the glass and ceramics in which ion implantation was performed, it was clarified that glass surface was depressed, and ceramic surface swelled. These depression and swelling changed according to the kinds of ions, energy and the amount to be implanted and the temperature of samples. It became clear that the depression of glass surface was nearly proportional to the range of flight of the implanted ions, and the swelling of ceramic surface showed different state in the silicon nitride with strong covalent bond and the alumina and sapphire with strong ionic bond. For the improvement of the mechanical characteristics of solid materials such as hardness, strength, toughness, wear resistance, oxidation resistance and so on, attention has been paid to the surface reforming by high energy ion implantation at MeV level. The change of shapes of base materials due to ion implantation is not always negligible. The experiment was carried out on sintered silicon nitride and alumina, polished sapphire single crystals and quartz glass. The experimental method and the results are reported. (K.I.)

Traps for phosphorus adsorption

International Nuclear Information System (INIS)

Montoya, Nawer D; Villegas, Wilson E; Rodriguez, Lino M; Taborda, Nelson; Montes de C, Consuelo

2001-01-01

Several AL 2 O 3 supported oxides such as: NiO, CuO, Co 2 O 3 BaO, CeO 2 and ZnO were investigated for phosphorus adsorption. Zno/y-Al 2 O 3 exhibited the highest phosphorus adsorption capacity. However, since it diminishes the activity of to the reaction mixture it should be located upstream of the NoX catalyst, i.e. 0,3% Pd-H-MOR, in order to protect it against p poisoning. The treatment procedure with citric acid was effective for the removal of more than 70% phosphorus from the adsorbent, ZnO/y-Al 2 O 3

Exfoliation on stainless steel and inconel produced by 0.8-4 MeV helium ion bombardment

International Nuclear Information System (INIS)

Paszti, F.; Mezey, G.; Pogany, L.; Fried, M.; Manuaba, A.; Kotai, E.; Lohner, T.; Pocs, L.

1982-11-01

Trying to outline the energy dependence of surface deformations such as exfoliation and flaking on candidate CTR first-wall materials, stainless steel and two types of inconels were bombarded by 0.8, 1 and 4 MeV helium ions. All the bombarded spots could be characterized by by large exfoliations covering almost the total implanted area. No spontaneous rupture was observed except on one type of inconel where flaking took place right after reaching the critical dose. After mechanical opening of the formations, similar inner morphology was found as in our previous studies on gold. (author)

Oxygen and sodium plasma-implanted nickel-titanium shape memory alloy: A novel method to promote hydroxyapatite formation and suppress nickel leaching

International Nuclear Information System (INIS)

Chan, Y.L.; Yeung, K.W.K.; Lu, W.W.; Ngan, A.H.W.; Luk, K.D.K.; Chan, D.; Wu, S.L.; Liu, X.M.; Chu, Paul K.; Cheung, K.M.C.

2007-01-01

This study aims at modifying the surface bioactivity of NiTi by sodium and oxygen plasma immersion ion implantation (PIII). Sodium ions were implanted into oxygen plasma-implanted NiTi and untreated NiTi. X-ray photoelectron spectroscopy (XPS) revealed that more sodium was implanted into the oxygen pre-implanted sample in comparison with the untreated surface. Scanning electron microscopy (SEM) coupled with energy dispersive X-ray analysis (EDX) detected calcium and phosphorus rich deposits on both samples after immersion in simulated body fluids for 7 and 21 days. Inductively-coupled plasma mass spectrometry (ICPMS) conducted on the deposits dissolved in diluted hydrochloric acid showed more calcium on the oxygen PIII samples. The improved corrosion resistance of the oxygen PIII NiTi was retained after sodium PIII as evaluated by potentiodynamic polarization tests. Better spreading and proliferation of osteoblasts were also observed on the treated samples

Phosphorus recycling from an unexplored source by polyphosphate accumulating microalgae and cyanobacteria – a step to phosphorus security in agriculture

Directory of Open Access Journals (Sweden)

Chandan eMukherjee

2015-12-01

Full Text Available Phosphorus (P, an essential element required for crop growth has no substitute. The global food security depends on phosphorus availability in soil for crop production. World phosphorus reserves are fast depleting and with an annual increase of 2.3% in phosphorus demand, the current reserves will be exhausted in coming 50-100 years. India and other Western countries are forced to import phosphorus fertilizers at high costs to meet their agricultural demands due to uneven distribution of phosphate rocks on earth. The present study from India, aims to draw attention to an unnoticed source of phosphorus being wasted as parboiled rice mill effluent and subsequent bio-recovery of the valuable element from this unconventional source. The research was conducted in West Bengal, India, a state with the highest number of parboiled rice mills where its effluent carries on an average ~40 mg/L of soluble phosphorus. Technology to recover and recycle this wastewater P in India in a simple, inexpensive mode is yet to be optimized. Our strategy to use microalgae, Chlorella sp. and cyanobacteria, Cyanobacterium sp., Lyngbya sp. and Anabaena sp. to sequester the excess phosphorus from the effluent as polyphosphate inclusions and its subsequent recycling as slow and moderate release phosphorus biofertilizers to aid plant growth, preventing phosphorus loss and pollution, is a contemporary venture to meet the need of the hour. These polyphosphate accumulating microorganisms play a dual role of remediation and recovery of phosphorus, preliminarily validated in laboratory scale.

Relative efficiency of different methods of phosphorus (32P) application on fertilizer phosphorus uptake by maize (zea may L.)

International Nuclear Information System (INIS)

Chaudhary, M.L.; Gupta, A.P.

1975-01-01

A green house study was conducted for comparing four methods of phosphorus application (broad cast, below the seed, one side and both sides of the seeds) at the rate of 60 ppm in sierozem soil of H issar (Haryana). Maize crop was planted in 50 cm. bottomless bitumin drums for 70 days i.e. upto tasseling stage. The plant samples were collected at jointing and tasseling stages of plant growth. The results revealed that the highest dry matter yield, total and fertilizer phosphorus uptake was observed when the phosphorus was applied below the seed, followed by both side application of phosphorus. The least yield, total and fertilizer phosphorus uptake were recorded when the phosphorus was broadcast at the time of sowing. (author)

High-resolution Auger spectroscopy on 79 MeV Ar5+, 89 MeV Ar6+, and 136 MeV Ar7+ ions after excitation by helium

International Nuclear Information System (INIS)

Schneider, T.

1988-01-01

In this thesis the atomic structure of highly excited Ar 6+ and Ar 7+ ions was studied. For this 79 MeV Ar 5+ , 89 MeV Ar 6+ , and 136 MeV Ar 7+ ions of a heavy ion accelerator were excited by a He gas target to autoionizing states and the Auger electrons emitted in the decay were measured in highly-resolving state. The spectra were taken under an observational angle of zero degree relative to the beam axis in order to minimize the kinematical broadening of the Auger lines. (orig./HSI) [de

Cross sections and analyzing powers of 15N(p,n)15O at 200 MeV and 494 MeV

International Nuclear Information System (INIS)

Ciskowski, D.E.

1989-11-01

Differential cross sections and analyzing powers have been measured for the 15 N(p,n) 15 O(g.s.) reaction at bombarding energies of 200 MeV and 494 MeV. The 494 MeV data were obtained at the LAMPF Neutron Time-Of-Flight Facility on an 82 m flight path with a resolution of about 2.7 MeV. The 200 MeV data were obtained at IUCF on a 76m flight path with a resolution of about 1.1 MeV. At both energies, the measured analyzing power is small, the magnitude is less than .2 for momentum transfers of less than 1 fm -1 . In contrast, both Relativistic and standard DWIA calculations predict a maximum of A=-.7 near q=0.7 fm -1 . 53 refs., 44 figs

Synthesis and characterization of ion-implanted Pt nanocrystals in SiO2

International Nuclear Information System (INIS)

Giulian, R.; Kluth, P.; Johannessen, B.; Araujo, L.L.; Llewellyn, D.J.; Cookson, D.J.; Ridgway, M.C.

2007-01-01

Pt nanocrystals (NCs) produced by ion implantation in SiO 2 films were investigated by Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM) and small angle X-ray scattering (SAXS). The implantations were performed at liquid nitrogen temperature using energies between 3.4 and 5.6 MeV and an ion fluence range of 2-30 x 10 16 cm -2 and were followed by annealing in forming gas (95% N 2 , 5% H 2 ) for one hour at temperatures between 500 and 1100 deg. C. TEM analysis revealed that the NCs are spherical in shape. The mean size of the NCs annealed at 1100 deg. C varied between 2.8 and 3.6 nm for the highest and lowest fluences, respectively, as determined with both TEM and SAXS. In contrast to previous studies on ion implanted metal NCs, larger Pt NCs are located far beyond the Pt peak concentration, potentially the result of a strongly defect mediated NC nucleation

Electron beam irradiation after reconstruction with silicone gel implant in breast cancer

International Nuclear Information System (INIS)

Krishnan, L.; Krishnan, E.C.

1986-01-01

Irradiation for breast cancer in the presence of a silicone gel breast prosthesis is sometimes necessary. There is a concern among radiation and other oncologists as to whether the presence of the prosthetic implant would interfere with delivery of the needed irradiation doses. Electron beams, with their finite penetration and rapid fall-off, offer a mode of adequately treating the recurrence and minimizing the radiation to the underlying normal structures, such as the lung and the heart. The dose distribution using 9-20 MeV electrons in the presence of a breast prosthesis is compared to the dose distribution without the implant in a tissue equivalent water phantom. The results reveal no significant difference in the dose delivered due to the presence of the prosthesis. Clinical verification of the dosimetry in the presence of the prosthesis confirmed that the presence of the silicone gel implant does not compromise treatment by irradiation in the management of breast cancer

Contributions to total phosphorus intake: all sources considered.

Science.gov (United States)

Calvo, Mona S; Uribarri, Jaime

2013-01-01

High serum phosphorus is linked to poor health outcome and mortality in chronic kidney disease (CKD) patients before or after the initiation of dialysis. Dietary intake of phosphorus, a major determinant of serum phosphorus, seems to be systematically underestimated using the available software tools and generalized nutrient content databases. Several sources of dietary phosphorus including the addition of phosphorus ingredients in food processing, and phosphorus content of vitamin and mineral supplements and commonly used over-the-counter or prescription medications are not fully accounted for by the nutrient content databases and software programs in current clinical use or used in large population studies. In this review, we explore the many unknown sources of phosphorus in the food supply to identify all possible contributors to total phosphorus intake of Americans that have escaped inclusion in past intake estimates. Our goal is to help delineate areas for future interventions that will enable tighter control of dietary phosphorus intake, a critical factor to maintaining health and quality of life in CKD and dialysis patients. © 2012 Wiley Periodicals, Inc.

Influence of integrated phosphorus supply and plant growth ...

African Journals Online (AJOL)

To guarantee a sufficient phosphorus supply for plants, a rapid and permanent mobilization of phosphorus from the labile phosphorus fractions is necessary, because phosphorus concentrations in soil solution are generally low. Several plant growth-promoting rhizobacteria (PGPR) have shown potential to enhance ...

Creep tests of AISI 316 stainless steel irradiated by alpha particles of 28 MeV

International Nuclear Information System (INIS)

Segura, E.; Lucki, G.

1986-01-01

He-embrittlement effect in AISI 316 SS type throught creep tests performed with annealed and cold worked thin specimens is analized. Measurements were carried out at 700 and 750 0 C, stress of 100 MPa in vacuum better than 10 -5 torr. The He-implantations were made with the cyclotron CV-28 IPEN-CNEN/SP. Using an alpha-particle beam of 28 MeV, with concentration of 26 appm. From the valves of rupture deformation, epsilon sub(R), and rupture time, t sub(R), it was verified that he had a great effect on the operational life and ductility of this material. (Author) [pt

Compositional, structural, and optical changes of polyimide implanted by 1.0 MeV Ni+ ions

Czech Academy of Sciences Publication Activity Database

Mikšová, Romana; Macková, Anna; Pupíková, Hana; Malinský, Petr; Slepička, P.; Švorčík, V.

2017-01-01

Roč. 406, SEP (2017), s. 199-204 ISSN 0168-583X R&D Projects: GA MŠk LM2015056; GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:61389005 Keywords : Ni ion implantation * polyimide * polymer degradation Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders OBOR OECD: Nuclear physics Impact factor: 1.109, year: 2016

Optical waveguides in fluoride lead silicate glasses fabricated by carbon ion implantation

Science.gov (United States)

Shen, Xiao-liang; Wang, Yue; Zhu, Qi-feng; Lü, Peng; Li, Wei-nan; Liu, Chun-xiao

2018-03-01

The carbon ion implantation with energy of 4.0 MeV and a dose of 4.0×1014 ions/cm2 is employed for fabricating the optical waveguide in fluoride lead silicate glasses. The optical modes as well as the effective refractive indices are measured by the prism coupling method. The refractive index distribution in the fluoride lead silicate glass waveguide is simulated by the reflectivity calculation method (RCM). The light intensity profile and the energy losses are calculated by the finite-difference beam propagation method (FD-BPM) and the program of stopping and range of ions in matter (SRIM), respectively. The propagation properties indicate that the C2+ ion-implanted fluoride lead silicate glass waveguide is a candidate for fabricating optical devices.

Phosphorus determination by various substoichiometric methods

International Nuclear Information System (INIS)

Shigematsu, Toshio; Kudo, Kiyoshi

1981-01-01

Various substoichiometric methods have been classified from a view point of the substoichiometric separation. Based upon the substoichiometric separation, phosphorus was determined substoichiometrically by a direct method, a method of carrier amount variation and a comparison method for the irradiated sample. The direct method was applied to the determination of phosphorus in orchard leaves (SRM-1571). The analytical value was 0.23 +- 0.01%. Phosphorus in orchard leaves and spinach (SRM-1570) was determined by an ordinary method which devided the sample into equal parts in the method of carrier amount variation. Analytical values of orchard leaves and spinach were 0.22 +- 0.02% and 0.56 +- 0.04%, respectively. Moreover, a new modification of the method of carrier amount variation was studied by the use of various standard samples such as red phosphorus, spinach and orchard leaves. These standard samples were also employed for the determination of phosphorus in orchard leaves and 0.21 +- 0.01% was obtained. All these results are in good agreement with the value reported by NBS. The comparison method was applied to the determination of phosphorus in a semiconductor silicon single crystal. As a result of the correction of 32 P activity induced by the secondary nuclear reaction of 30 Si, 7.9 ppb and 3.1 ppb were obtained for the phosphorus concentrations in the single crystal silicon. (author)

Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

International Nuclear Information System (INIS)

Tsukamoto, K.; Akasaka, Y.; Horie, K.

1977-01-01

Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

Visualizing alternative phosphorus scenarios for future food security

Directory of Open Access Journals (Sweden)

Tina-Simone Neset

2016-10-01

Full Text Available The impact of global phosphorus scarcity on food security has increasingly been the focus of scientific studies over the past decade. However, systematic analyses of alternative futures for phosphorus supply and demand throughout the food system are still rare and provide limited inclusion of key stakeholders. Addressing global phosphorus scarcity requires an integrated approach exploring potential demand reduction as well as recycling opportunities. This implies recovering phosphorus from multiple sources, such as food waste, manure and excreta, as well as exploring novel opportunities to reduce the long-term demand for phosphorus in food production such as changing diets. Presently, there is a lack of stakeholder and scientific consensus around priority measures. To therefore enable exploration of multiple pathways and facilitate a stakeholder dialogue on the technical, behavioral and institutional changes required to meet long-term future phosphorus demand, this paper introduces an interactive web-based tool, designed for visualizing global phosphorus scenarios in real-time. The interactive global phosphorus scenario tool builds on several demand and supply side measures that can be selected and manipulated interactively by the user. It provides a platform to facilitate stakeholder dialogue to plan for a soft landing and identify a suite of concrete priority options, such as investing in agricultural phosphorus use efficiency, or renewable fertilizers derived from phosphorus recovered from wastewater and food waste, to determine how phosphorus demand to meet future food security could be attained on a global scale in 2040 and 2070. This paper presents four example scenarios, including (1 the potential of full recovery of human excreta, (2 the challenge of a potential increase in non-food phosphorus demand, (3 the potential of a decreased animal product consumption, and (4 the potential decrease in phosphorus demand from increased efficiency

Visualizing Alternative Phosphorus Scenarios for Future Food Security.

Science.gov (United States)

Neset, Tina-Simone; Cordell, Dana; Mohr, Steve; VanRiper, Froggi; White, Stuart

2016-01-01

The impact of global phosphorus scarcity on food security has increasingly been the focus of scientific studies over the past decade. However, systematic analyses of alternative futures for phosphorus supply and demand throughout the food system are still rare and provide limited inclusion of key stakeholders. Addressing global phosphorus scarcity requires an integrated approach exploring potential demand reduction as well as recycling opportunities. This implies recovering phosphorus from multiple sources, such as food waste, manure, and excreta, as well as exploring novel opportunities to reduce the long-term demand for phosphorus in food production such as changing diets. Presently, there is a lack of stakeholder and scientific consensus around priority measures. To therefore enable exploration of multiple pathways and facilitate a stakeholder dialog on the technical, behavioral, and institutional changes required to meet long-term future phosphorus demand, this paper introduces an interactive web-based tool, designed for visualizing global phosphorus scenarios in real time. The interactive global phosphorus scenario tool builds on several demand and supply side measures that can be selected and manipulated interactively by the user. It provides a platform to facilitate stakeholder dialog to plan for a soft landing and identify a suite of concrete priority options, such as investing in agricultural phosphorus use efficiency, or renewable fertilizers derived from phosphorus recovered from wastewater and food waste, to determine how phosphorus demand to meet future food security could be attained on a global scale in 2040 and 2070. This paper presents four example scenarios, including (1) the potential of full recovery of human excreta, (2) the challenge of a potential increase in non-food phosphorus demand, (3) the potential of decreased animal product consumption, and (4) the potential decrease in phosphorus demand from increased efficiency and yield gains in

Phosphorus K4 Crystal: A New Stable Allotrope

OpenAIRE

Jie Liu; Shunhong Zhang; Yaguang Guo; Qian Wang

2016-01-01

The intriguing properties of phosphorene motivate scientists to further explore the structures and properties of phosphorus materials. Here, we report a new allotrope named K 4 phosphorus composed of three-coordinated phosphorus atoms in non-layered structure which is not only dynamically and mechanically stable, but also possesses thermal stability comparable to that of the orthorhombic black phosphorus (A17). Due to its unique configuration, K 4 phosphorus exhibits exceptional properties: i...

Characterization of silver colloids formed in LiBbO3 by Ag and O implantation at room and elevated temperatures

International Nuclear Information System (INIS)

Williams, E.K.; Ila, D.; Darwish, A.; Poker, D.B.; Sarkisov, S.S.; Curley, M.J.; Wang, J.-C.; Svetchnikov, V.L.; Zandbergen, H.W.

1999-01-01

To address the issue of dispersion of Ag colloids in LiNbO 3 at heat treatment temperatures of 400-500 deg. C, Ag and O were implanted at energies of 160 and 35 keV, respectively, at room temperature (Rt) and at 500 deg. C. Fluences were 4x10 16 and 8x10 16 /cm 2 and the order of the Ag and O implants was varied. Electron paramagnetic resonance spectra indicated that only O followed by Ag implantation of 500 deg. C produced silver oxide. Optical absorption spectrometry and RBS showed significant differences in the dispersion of the colloids with implant temperature and implant order. Implantation of Ag at 1.5 MeV to a fluence of 2x10 16 /cm 2 followed by heat treatment at 500 deg. C for 1 h produced nonlinear optical waveguides with a nonlinear index of the order of 10 -10 cm 2 /W at 532 nm

Micro- and macro-structure of implantation-induced disorder in Ge

CERN Document Server

Glover, C J; Byrne, A P; Yu, K M; Foran, G J; Clerc, C; Hansen, J L; Nylandsted-Larsen, A

2000-01-01

The structure of ion implantation-induced damage in Ge substrates has been investigated with a combination of ion- and photon-based techniques including Rutherford backscattering spectrometry (RBS), perturbed angular correlation (PAC) and extended X-ray absorption fine structure (EXAFS) spectroscopy. For MeV Ge ion implantation at -196 degrees C, the dose dependence of the decrease in local atomic order, determined from EXAFS and PAC, was compared to the number of displaced atoms determined from RBS measurements. An EXAFS determined damage fraction was shown to be a better estimate of amorphous fraction than the number of displaced atoms. PAC was used to elucidate the evolution of defective configurations, and was compared to the RBS and EXAFS results. A fit to the overlap model with the overlap of two ion cascades for complete amorphization best described the experimental results. (16 refs).

Yellow phosphorus-induced Brugada phenocopy.

Science.gov (United States)

Dharanipradab, Mayakrishnan; Viswanathan, Stalin; Kumar, Gokula Raman; Krishnamurthy, Vijayalatchumy; Stanley, Daphene Divya

Metallic phosphides (of aluminum and phosphide) and yellow phosphorus are commonly used rodenticide compounds in developing countries. Toxicity of yellow phosphorus mostly pertains to the liver, kidney, heart, pancreas and the brain. Cardiotoxicity with associated Brugada ECG pattern has been reported only in poisoning with metallic phosphides. Brugada phenocopy and hepatic dysfunction were observed in a 29-year-old male following yellow phosphorus consumption. He had both type 1 (day1) and type 2 (day2) Brugada patterns in the electrocardiogram, which resolved spontaneously by the third day without hemodynamic compromise. Toxins such as aluminum and zinc phosphide have been reported to induce Brugada ECG patterns due to the generation of phosphine. We report the first case of yellow phosphorus-related Brugada phenocopy, without hemodynamic compromise or malignant arrhythmia. Copyright © 2017 Elsevier Inc. All rights reserved.

Calculation of the substitutional fraction of ion-implanted He in an α-Fe target

Science.gov (United States)

Erhart, Paul; Marian, Jaime

2011-07-01

Ion-implantation is a useful technique to study irradiation damage in nuclear materials. To study He effects in nuclear fusion conditions, He is co-implanted with damage ions to reproduce the correct He/dpa ratios in the desired or available depth range. However, the short-term fate of these He ions, i.e. over the time scales of their own collisional phase, has not been yet unequivocally established. Here we present a computational study of the short-term evolution of He implantation in an Fe substrate at 700 K to approximate the conditions encountered in dual ion-implantation studies in ferritic materials. Using a combination of SRIM, molecular dynamics and kinetic Monte Carlo (kMC), we calculate the fraction of He atoms that end up in substitutional sites shortly after implantation, i.e. before they contribute to long-term microstructural evolution. We find that fractions of at most 3% should be expected for most implantation studies. Additionally, to inform the kMC calculations, we carry out an exhaustive calculation of interstitial He migration energy barriers in the vicinity of matrix vacancies and find that they vary from approximately 20-60 meV depending on the separation and orientation of the He-vacancy pair.

Calculation of the substitutional fraction of ion-implanted He in an α-Fe target

International Nuclear Information System (INIS)

Erhart, Paul; Marian, Jaime

2011-01-01

Ion-implantation is a useful technique to study irradiation damage in nuclear materials. To study He effects in nuclear fusion conditions, He is co-implanted with damage ions to reproduce the correct He/dpa ratios in the desired or available depth range. However, the short-term fate of these He ions, i.e. over the time scales of their own collisional phase, has not been yet unequivocally established. Here we present a computational study of the short-term evolution of He implantation in an Fe substrate at 700 K to approximate the conditions encountered in dual ion-implantation studies in ferritic materials. Using a combination of SRIM, molecular dynamics and kinetic Monte Carlo (kMC), we calculate the fraction of He atoms that end up in substitutional sites shortly after implantation, i.e. before they contribute to long-term microstructural evolution. We find that fractions of at most 3% should be expected for most implantation studies. Additionally, to inform the kMC calculations, we carry out an exhaustive calculation of interstitial He migration energy barriers in the vicinity of matrix vacancies and find that they vary from approximately 20-60 meV depending on the separation and orientation of the He-vacancy pair.

14 MeV neutrons physics and applications

CERN Document Server

Valkovic, Vladivoj

2015-01-01

Despite the often difficult and time-consuming effort of performing experiments with fast (14 MeV) neutrons, these neutrons can offer special insight into nucleus and other materials because of the absence of charge. 14 MeV Neutrons: Physics and Applications explores fast neutrons in basic science and applications to problems in medicine, the environment, and security.Drawing on his more than 50 years of experience working with 14 MeV neutrons, the author focuses on:Sources of 14 MeV neutrons, including laboratory size accelerators, small and sealed tube generators, well logging sealed tube ac

High level active n+ doping of strained germanium through co-implantation and nanosecond pulsed laser melting

Science.gov (United States)

Pastor, David; Gandhi, Hemi H.; Monmeyran, Corentin P.; Akey, Austin J.; Milazzo, Ruggero; Cai, Yan; Napolitani, Enrico; Gwilliam, Russell M.; Crowe, Iain F.; Michel, Jurgen; Kimerling, L. C.; Agarwal, Anuradha; Mazur, Eric; Aziz, Michael J.

2018-04-01

Obtaining high level active n+ carrier concentrations in germanium (Ge) has been a significant challenge for further development of Ge devices. By ion implanting phosphorus (P) and fluorine (F) into Ge and restoring crystallinity using Nd:YAG nanosecond pulsed laser melting (PLM), we demonstrate 1020 cm-3 n+ carrier concentration in tensile-strained epitaxial germanium-on-silicon. Scanning electron microscopy shows that after laser treatment, samples implanted with P have an ablated surface, whereas P + F co-implanted samples have good crystallinity and a smooth surface topography. We characterize P and F concentration depth profiles using secondary ion mass spectrometry and spreading resistance profiling. The peak carrier concentration, 1020 cm-3 at 80 nm below the surface, coincides with the peak F concentration, illustrating the key role of F in increasing donor activation. Cross-sectional transmission electron microscopy of the co-implanted sample shows that the Ge epilayer region damaged during implantation is a single crystal after PLM. High-resolution X-ray diffraction and Raman spectroscopy measurements both indicate that the as-grown epitaxial layer strain is preserved after PLM. These results demonstrate that co-implantation and PLM can achieve the combination of n+ carrier concentration and strain in Ge epilayers necessary for next-generation, high-performance Ge-on-Si devices.

Determination of phosphorus using derivative neutron activation

International Nuclear Information System (INIS)

Scindia, Y.M.; Nair, A.G.C.; Reddy, A.V.R.; Manohar, S.B.

2002-01-01

For the determination of phosphorus in different matrices, the derivative neutron activation analysis is especially applicable to aqueous samples, since the conventional neutron activation analysis is not useful for the determination of phosphorus. Phosphorus when reacted with ammonium molybdate 4 hydrate and ammonium metavanadate forms molybdo vanado phosphoric acid. This complex is preconcentrated by extracting into methyl isobutyl ketone. The organic phase containing the molybdo vanado phosphoric acid is neutron activated and the phosphorus is determined through the activation product of 52 V. Preparation of this complex, its stoichiometry, application to trace level determination of phosphorus and improved detection limit are discussed. This method was applied for the analysis of industrial effluent samples. (author)

Guiding phosphorus stewardship for multiple ecosystem services

Science.gov (United States)

Phosphorus is vital to agricultural production and water quality regulation. While the role of phosphorus in agriculture and water quality has been studied for decades, the benefits of sustainable phosphorus use and management for society due to its downstream impacts on multiple ecosystem services...

Impacts of anthropic pressures on soil phosphorus availability, concentration, and phosphorus forms in sediments in a Southern Brazilian watershed

Energy Technology Data Exchange (ETDEWEB)

Pellegrini, Joao Batista Rossetto; Rheinheimer dos Santos, Danilo; Goncalves, Celso Santos; Copetti, Andre Carlos Cruz [Dept. de Solos, Univ. Federal de Santa Maria, Centro de Ciencias Rurais, Santa Maria, RS (Brazil); Bortoluzzi, Edson Campanhola [Faculdade de Agronomia e Medicina Veterinaria da Univ. de Passo Fundo, RS (Brazil); Tessier, Daniel [Inst. National de la Recherche Agronomique, Versailles (France)

2010-04-15

Purpose: The transfer of soil sediments and phosphorus from terrestrial to aquatic systems is a common process in agricultural lands. The aims of this paper are to quantify the soil phosphorus availability and to characterize phosphorus forms in soil sediments as contaminant agents of waters as a function of anthropic pressures. Materials and methods On three subwatersheds with different anthropic pressure, water and sediment samples were collected automatically in upstream and downstream discharge points in six rainfall events during the tobacco growing season. Phosphorus desorption capacity from soil sediments was estimated by successive extractions with anion exchange resins. First-order kinetic models were adjusted to desorption curves for estimating potentially bioavailable particulate phosphorus, desorption rate constant, and bioavailable particulate phosphorus. Results and discussion The amount of bioavailable particulate phosphorus was directly correlated with the iron oxide content. The value of desorption rate constant was directly related with the total organic carbon and inversely with the iron oxide contents. Phosphate ions were released to solution, on average, twice as rapidly from sediments collected in subwatersheds with low anthropic activity than from those ones of highly anthropic subwatersheds. Anthropic pressure on watershed can engender high sediment discharge, but these solid particles seem to present low phosphorus-releasing capacity to water during transport due to the evidenced high affinity between phosphorus and iron oxide from sediments. Conclusions Anthropic pressure was related with sediment concentration and phosphorus release to aquatic systems. While natural vegetation along streams plays a role on soil and water depuration, it is unable to eliminate the phosphorus inputs intrinsic to the agricultural-intensive systems. Recommendations and perspectives The contamination of water in watershed by phosphates is facilitated by the

Microstructural change of Al on H implantation

Energy Technology Data Exchange (ETDEWEB)

Kamada, K; Sagara, A; Kinoshita, H; Takahashi, H

1987-01-01

Modifications to the subsurface layer of Al on 25 keV H/sub 2//sup +/ ion implantation to fluences of 4 x 10/sup 17/ to 2 x 10/sup 18/ H/sup +//cm/sup 2/ at room temperature were investigated by transmission electron microscopy (TEM) and elastic recoil detection (ERD) with 1.5 MeV He/sup +/. Numerous bubbles ranging in diameter from 50 to 1000 A were observed with a sharp peak at 120 A irrespective of the ion fluence. Stereomicroscopic observations revealed the depth distribution of the bubbles. At fluences greater than 6 x 10/sup 17/ H/sup +//cm/sup 2/, a lateral layer of lower density compared with matrix was observed and named ''Swiss cheese structure'' since its estimated structure is similar to Emmental cheese containing many holes. This Swiss cheese structure causes the formation of new layers on a free surface, and plays a precursor role for blistering. Hhydrogen depth profiling with ERD was performed on every specimen revealing the collapse of the implanted hydrogen profile due to the formation of the Swiss cheese structure.

Phosphorus-containing macrocyclic compounds: synthesis and properties

International Nuclear Information System (INIS)

Knyazeva, I R; Burilov, Alexander R; Pudovik, Michael A; Habicher, Wolf D

2013-01-01

Main trends in the development of methods for the synthesis of phosphorus-containing macrocyclic compounds in the past 15 years are considered. Emphasis is given to reactions producing macrocyclic structures with the participation of a phosphorus atom and other functional groups involved in organophosphorus molecules and to modifications of macrocycles by phosphorus compounds in different valence states. Possibilities of the practical application of phosphorus-containing macrocyclic compounds in difference areas of science and engineering are discussed. The bibliography includes 205 references.

Anthropogenic phosphorus flow analysis of Hefei City, China

International Nuclear Information System (INIS)

Li Sisi; Yuan Zengwei; Bi Jun; Wu Huijun

2010-01-01

The substance flow analysis (SFA) method was employed to examine phosphorus flow and its connection to water pollution in the city of Hefei, China, in 2008. As human activity is the driving force of phosphorus flux from the environment to the economy, the study provides a conceptual framework for analyzing an anthropogenic phosphorus cycle that includes four stages: extraction, fabrication and manufacturing, use, and waste management. Estimates of phosphorus flow were based on existing data as well as field research, expert advice, local accounting systems, and literature. The total phosphorus input into Hefei in 2008 reached 7810 tons, mainly as phosphate ore, chemical fertilizer, pesticides, crops and animal products. Approximately 33% of the total phosphorus input left the area, and nearly 20% of that amount was discharged as waste to surface water. Effluent containing excessive fertilizer from farming operations plays an important role in phosphorus overloads onto surface water; the other major emission source is sewage discharge. We also provide suggestions for reducing phosphorus emissions, for example reducing fertilizer use, recycling farming residues, and changing human consumption patterns.

Biological phosphorus uptake under anoxic and aerobic conditions

DEFF Research Database (Denmark)

Kerrn-Jespersen, Jens Peter; Henze, Mogens

1993-01-01

Biological phosphorus removal was investigated under anoxic and aerobic conditions. Tests were made to establish whether phosphorus accumulating bacteria can take up phosphate under anoxic conditions and thus utilise nitrate as oxidant. Furthermore, it was tested how the amount of organic matter...... as oxidant. The phosphorus uptake was more rapid under aerobic conditions than under anoxic conditions. The explanation of this is that all phosphorus accumulating bacteria take up phosphate under aerobic conditions, whereas only part of the phosphorus accumulating bacteria take up phosphate under anoxic...

Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis

NARCIS (Netherlands)

Vos, M.; Boerma, D.O.; Smulders, P.J.M.; Oosterhoff, S.

1986-01-01

Single crystals of silicon were implanted at RT with 1 MeV boron ions to a dose of 1 × 1015 ions/cm2. The depth profile of the boron was measured using the 2060-keV resonance of the 11B(α, n)14N nuclear reaction. The distribution of the lattice disorder as a function of depth was determined from

Origins of low resistivity in Al ion-implanted ZnO bulk single crystals

Science.gov (United States)

Oga, T.; Izawa, Y.; Kuriyama, K.; Kushida, K.; Kinomura, A.

2011-06-01

The origins of low resistivity in Al ion-implanted ZnO bulk single crystals are studied by combining Rutherford backscattering spectroscopy (RBS), nuclear reaction analysis (NRA), photoluminescence (PL), and Van der Pauw methods. The Al-ion implantation (peak concentration: 2.6 × 1020cm-3) into ZnO is performed using a multiple-step energy. The resistivity decreases from ˜104 Ω cm for un-implanted ZnO to 1.4 × 10-1 Ω cm for as-implanted, and reaches 6.0 × 10-4 Ω cm for samples annealed at 1000 °C. RBS and NRA measurements for as-implanted ZnO suggest the existence of the lattice displacement of Zn (Zni) and O (Oi), respectively. After annealing at 1000 °C, the Zni related defects remain and the Oi related defects disappear. The origin of the low resistivity in the as-implanted sample is attributed to the Zni (˜30 meV [Look et al., Phys. Rev. Lett. 82, 2552 (1999)]). In contrast, the origin of the low resistivity in the sample annealed at 1000 °C is assigned to both of the Zni related defects and the electrically activated Al donor. A new PL emission appears at around 3.32 eV after annealing at 1000 °C, suggesting electrically activated Al donors.

Phosphorus kinetics in ovine fed with different phosphorus sources, using the isotopic dilution technique

International Nuclear Information System (INIS)

Vitti, D.M.S.S.; Abdalla, A.L.; Meirelles, C.F.

1992-01-01

Phosphorus kinetics in fluids and tissues of sheep was studied. Sixteen castrated sheep were kept in metabolism cages, receiving a semipuried diet containing as phosphorus sources dicalcium phosphate (BIC), monoammonium phosphate (MAP), superphosphate (SPT) and Tapita phosphate (TAP) 200 μCi P-32 was intravenously injected in each sheep and blood and feces were collected for eight days. From the specific activities in feces and plasma the endogenous phosphorus and the absorption coefficient were calculated. plasma P-32 half-life was determined. Nine days after injection the animals were killed and liver, kidney and muscle and bone samples were collected. P-32 retention and specific activities in tissues were determined. Endogenous phosphorus and absorption coefficient values were 54.44 ± 15.31 mh/kg live weight and 0.60; 47.98 ± 12.44 and 0.56; 39.70 ± 7.29 and 0.49; 59.11 ± 17.12 and 0.58 respectively bor BIC, MAP, TAP and SPT. P-32 retention by tissues was 0.29 ± 0.09; 0.27 ± 0.06; 0.16 ± 0.04 and 0.08 ± 0.03 dose/g fresh matter, respectively for bone, liver, kidney and muscle. It was concluded that animals which received TAP showed differences in absorption, distribution and P-32 retention by fluids and tissues. Phosphorus availability was lower for this source. (author)

Estimate of dietary phosphorus intake using 24-h urine collection

Science.gov (United States)

Morimoto, Yuuka; Sakuma, Masae; Ohta, Hiroyuki; Suzuki, Akitsu; Matsushita, Asami; Umeda, Minako; Ishikawa, Makoto; Taketani, Yutaka; Takeda, Eiji; Arai, Hidekazu

2014-01-01

Increases in serum phosphorus levels and dietary phosphorus intake induces vascular calcification, arterial sclerosis and cardiovascular diseases. Limiting phosphorus intake is advisable, however, no assessment methods are capable of estimating dietary phosphorus intake. We hypothesized that urinary phosphorus excretion can be translated into estimation of dietary phosphorus intake, and we evaluated whether a 24-h urine collection method could estimate dietary phosphorus intake. Thirty two healthy subjects were recruited for this study. Subjects collected urine samples over 24 h and weighed dietary records. We calculated dietary protein intake and phosphorus intake from dietary records and urine collection, and investigated associations between the two methods in estimating protein and phosphorus intake. Significant positive correlations were observed between dietary records and UC for protein and phosphorus intake. The average intakes determined from dietary records were significantly higher than from urine collection for both protein and phosphorus. There was a significant positive correlation between both the phosphorus and protein difference in dietary records and urine collection. The phosphorus-protein ratio in urine collection was significantly higher than in dietary records. Our data indicated that the 24-h urine collection method can estimate the amount of dietary phosphorus intake, and the results were superior to estimation by weighed dietary record. PMID:25120281

Effects of helium on ductile brittle transition behavior of reduced activation ferritic steels after high concentration he implantation at high temperature

Energy Technology Data Exchange (ETDEWEB)

Hasegawa, A.; Ejiri, M.; Nogami, S.; Ishiga, M.; Abe, K. [Tohoku Univ., Dept. of Quantum Science and Energy Engr, Sendai (Japan); Kasada, R.; Kimura, A. [Kyoto Univ., Institute of Advanced Energy (Japan); Jitsukawa, S. [Japan Atomic Energy Agency, Tokai-mura, Naga-gun, Ibaraki-ken (Japan)

2007-07-01

Full text of publication follows: Influence of Helium (He) on fracture behavior of reduced activation ferritic/martensitic steels including Oxide Dispersion Strengthening (ODS) steels and F82H were examined. To study the He effects on fracture behavior of these steels after He bubble formation conditions, higher concentration of He implantation at around 550 C were performed and examined the relationship between microstructure evolution and fracture behavior of the steels. The 1.5CVN mini size Charpy specimens were used to evaluate impact test behavior. Reduced activation ferritic ODS steels, 9Cr-ODS and 12Cr-ODS steels were examine. F82H was also examined as reference material. Helium implantation was performed by a cyclotron of Tohoku University with a beam of 50 MeV {alpha}-particles at temperature around 550 C. A tandem-type energy degrader system was used to implant He into the specimen from the irradiated surface to the range of 50 MeV {alpha}-particles, that was about 380 {mu}m in iron. Implanted He concentration were about 1000 appm. Charpy impact test was performed using a instrumented impact test apparatus in Oarai branch of IMR, Tohoku University. Analyses of absorbed energy change and fracture surface were carried out. Vickers hardness test was also carried out on He implanted area of the 1.5CVN specimen to estimate irradiation hardening. Microstructural observation was performed by TEM. In the case of F82H, DBTT increased by the 1000 appm He implantation condition was about 80 C and grain boundary fracture surface was only observed in the He implanted area of all the ruptured specimens in brittle manner. On the other hand, DBTT shift and fracture mode change of He implanted 9Cr-ODS steel was not observed after He implantation. Microstructural observation showed that He bubble formation on the lath boundaries and grain boundaries were significant in F82H, but the bubble segregation on grain boundary in ODS steel was not apparent. The bubble formation

Phosphorus run-off assessment in a watershed.

Science.gov (United States)

Chebud, Yirgalem; Naja, Ghinwa M; Rivero, Rosanna

2011-01-01

The Watershed Assessment Model was used to simulate the runoff volume, peak flows, and non-point source phosphorus loadings from the 5870 km(2) Lake Okeechobee watershed as a case study. The results were compared to on-site monitoring to verify the accuracy of the method and to estimate the observed/simulated error. In 2008, the total simulated phosphorus contribution was 9634, 6524 and 3908 kg (P) y(-1) from sod farms, citrus farms and row crop farmlands, respectively. Although the dairies represent less than 1% of the total area of Kissimmee basin, the simulated P load from the dairies (9283 kg (P) y(-1) in 2008) made up 5.4% of the total P load during 2008. On average, the modeled P yield rates from dairies, sod farms and row crop farmlands are 3.85, 2.01 and 0.86 kg (P) ha(-1) y(-1), respectively. The maximum sediment simulated phosphorus yield rate is about 2 kg (P) ha(-1) and the particulate simulated phosphorus contribution from urban, improved pastures and dairies to the total phosphorus load was estimated at 9%, 3.5%, and 1%, respectively. Land parcels with P oversaturated soil as well as the land parcels with high phosphorus assimilation and high total phosphorus contribution were located. The most critical sub-basin was identified for eventual targeting by enforced agricultural best management practices. Phosphorus load, including stream assimilation, incoming to Lake Okeechobee from two selected dairies was also determined.

Sustainable use of phosphorus: a finite resource.

Science.gov (United States)

Scholz, Roland W; Ulrich, Andrea E; Eilittä, Marjatta; Roy, Amit

2013-09-01

Phosphorus is an essential element of life and of the modern agricultural system. Today, science, policy, agro-industry and other stakeholder groups are increasingly concerned about the sustainable use of this resource, given the dissipative nature of phosphorus and difficulties in assessing, evaluating, and coping with phosphorus pollution in aquatic and terrestrial systems. We argue that predictions about a forthcoming peak, followed by a quick reduction (i.e., physical phosphate rock scarcity) are unreasoned and stress that access to phosphorus (economic scarcity) is already, and may increasingly become critical, in particular for smallholders farmers in different parts of the world. The paper elaborates on the design, development, goals and cutting-edge contributions of a global transdisciplinary process (i.e. mutual learning between science and society including multiple stakeholders) on the understanding of potential contributions and risks related to the current mode of using phosphorus on multiple scales (Global TraPs). While taking a global and comprehensive view on the whole phosphorus-supply chain, Global TraPs organizes and integrates multiple transdisciplinary case studies to better answer questions which inform sustainable future phosphorus use. Its major goals are to contribute to four issues central to sustainable resource management: i) long-term management of biogeochemical cycles, in particular the challenge of closing the phosphorus cycle, ii) achieving food security, iii) avoiding environmental pollution and iv) sustainability learning on a global level by transdisciplinary processes. Copyright © 2013 Elsevier B.V. All rights reserved.

Structural Changes in Polymer Films by Fast Ion Implantation

Science.gov (United States)

Parada, M. A.; Minamisawa, R. A.; Muntele, C.; Muntele, I.; De Almeida, A.; Ila, D.

2006-11-01

In applications from food wrapping to solar sails, polymers films can be subjected to intense charged panicle bombardment and implantation. ETFE (ethylenetetrafluoroethylene) with high impact resistance is used for pumps, valves, tie wraps, and electrical components. PFA (tetrafluoroethylene-per-fluoromethoxyethylene) and FEP (tetrafluoroethylene-hexa-fluoropropylene) are sufficiently biocompatible to be used as transcutaneous implants since they resist damage from the ionizing space radiation, they can be used in aerospace engineering applications. PVDC (polyvinyllidene-chloride) is used for food packaging, and combined with others plastics, improves the oxygen barrier responsible for the food preservation. Fluoropolymers are also known for their radiation dosimetry applications, dependent on the type and energy of the radiation, as well as of the beam intensity. In this work ETFE, PFA, FEP and PVDC were irradiated with ions of keV and MeV energies at several fluences and were analyzed through techniques as RGA, OAP, FTIR, ATR and Raman spectrophotometry. CF3 is the main specie emitted from PFA and FEP when irradiated with MeV protons. H and HF are released from ETFE due to the broken C-F and C-H bonds when the polymer is irradiated with keV Nitrogen ions and protons. At high fluence, especially for keV Si and N, damage due to carbonization is observed with the formation of hydroperoxide and polymer dehydroflorination. The main broken bonds in PVDC are C-O and C-Cl, with the release of Cl and the formation of double carbon bonds. The ion fluence that causes damage, which could compromise fluoropolymer film applications, has been determined.

Towards a closed phosphorus cycle

NARCIS (Netherlands)

Keyzer, M.A.

2010-01-01

Summary: This paper stresses the need to address upcoming scarcity of phosphorus, a mineral nutrient that is essential for all life on Earth. Agricultural crops obtain phosphorus from the pool in the soil that can be replenished by recycling of organic material, or by application of inorganic

Quantum effects in ion implanted devices

International Nuclear Information System (INIS)

Jamieson, D.N.; Chan, V.; Hudson, F.E.; Andresen, S.E.; Yang, C.; Hopf, T.; Hearne, S.M.; Pakes, C.I.; Prawer, S.; Gauja, E.; Dzurak, A.S.; Clark, R.G.

2006-01-01

Fabrication of nanoscale devices that exploit the rules of quantum mechanics to process information presents formidable technical challenges because of the need to control quantum states at the level of individual atoms, electrons or photons. We have used ion implantation to fabricate devices on the scale of 10 nm that have allowed the development and test of nanocircuitry for the control of charge transport at the level of single electrons. This fabrication method is compatible with the construction of devices that employ counted P dopants in Si by employing the technique of ion beam induced charge (IBIC) in which single 14 keV P ions can be implanted into ultra-pure silicon substrates by monitoring on-substrate detector electrodes. We have used IBIC with a MeV nuclear microprobe to map and measure the charge collection efficiency in the development of the electrode structure and show that 100% charge collection efficiency can be achieved. Prototype devices fabricated by this method have been used to investigate quantum effects in the control and transport of single electrons with potential applications to solid state quantum information processing devices

Anthropogenic phosphorus flow analysis of Hefei City, China.

Science.gov (United States)

Li, Sisi; Yuan, Zengwei; Bi, Jun; Wu, Huijun

2010-11-01

The substance flow analysis (SFA) method was employed to examine phosphorus flow and its connection to water pollution in the city of Hefei, China, in 2008. As human activity is the driving force of phosphorus flux from the environment to the economy, the study provides a conceptual framework for analyzing an anthropogenic phosphorus cycle that includes four stages: extraction, fabrication and manufacturing, use, and waste management. Estimates of phosphorus flow were based on existing data as well as field research, expert advice, local accounting systems, and literature. The total phosphorus input into Hefei in 2008 reached 7810 tons, mainly as phosphate ore, chemical fertilizer, pesticides, crops and animal products. Approximately 33% of the total phosphorus input left the area, and nearly 20% of that amount was discharged as waste to surface water. Effluent containing excessive fertilizer from farming operations plays an important role in phosphorus overloads onto surface water; the other major emission source is sewage discharge. We also provide suggestions for reducing phosphorus emissions, for example reducing fertilizer use, recycling farming residues, and changing human consumption patterns. Crown Copyright © 2010. Published by Elsevier B.V. All rights reserved.

Transformation of apatite phosphorus and non-apatite inorganic phosphorus during incineration of sewage sludge.

Science.gov (United States)

Li, Rundong; Zhang, Ziheng; Li, Yanlong; Teng, Wenchao; Wang, Weiyun; Yang, Tianhua

2015-12-01

The recovery of phosphorus from incinerated sewage sludge ash (SSA) is assumed to be economical. Transformation from non-apatite inorganic phosphorus (NAIP) to apatite phosphorus (AP), which has a higher bioavailability and more extensive industrial applications, was studied at 750-950°C by sewage sludge incineration and model compound incineration with a calcium oxide (CaO) additive. Thermogravimetric differential scanning calorimetry analysis and X-ray diffraction measurements were used to analyze the reactions between NAIP with CaO and crystallized phases in SSA. High temperatures stimulated the volatilization of NAIP instead of AP. Sewage sludge incineration with CaO transformed NAIP into AP, and the percentage of AP from the total phosphorus reached 99% at 950°C. Aluminum phosphate reacted with CaO, forming Ca2P2O7 and Ca3(PO4)2 at 750-950°C. Reactions between iron phosphate and CaO occurred at lower temperatures, forming Ca(PO3)2 before reaching 850°C. Copyright © 2015 Elsevier Ltd. All rights reserved.

[Research progress on phosphorus budgets and regulations in reservoirs].

Science.gov (United States)

Shen, Xiao; Li, Xu; Zhang, Wang-shou

2014-12-01

Phosphorus is an important limiting factor of water eutrophication. A clear understanding of its budget and regulated method is fundamental for reservoir ecological health. In order to pro- mote systematic research further and improve phosphorus regulation system, the budget balance of reservoir phosphorus and its influencing factors were concluded, as well as conventional regulation and control measures. In general, the main phosphorus sources of reservoirs include upstream input, overland runoff, industrial and domestic wastewater, aquaculture, atmospheric deposition and sediment release. Upstream input is the largest phosphorus source among them. The principal output path of phosphorus is the flood discharge, the emission load of which is mainly influenced by drainage patterns. In addition, biological harvest also can export a fraction of phosphorus. There are some factors affecting the reservoir phosphorus balance, including reservoirs' function, hydrological conditions, physical and chemical properties of water, etc. Therefore, the phosphorus budgets of different reservoirs vary greatly, according to different seasons and regions. In order to reduce the phosphorus loading in reservoirs, some methods are carried out, including constructed wetlands, prefix reservoir, sediment dredging, biomanipulation, etc. Different methods need to be chosen and combined according to different reservoirs' characteristics and water quality management goals. Thus, in the future research, it is reasonable to highlight reservoir ecological characteristics and proceed to a complete and systematic analysis of the inherent complexity of phosphorus budget and its impact factors for the reservoirs' management. Besides, the interaction between phosphorus budget and other nutrients in reservoirs also needs to be conducted. It is fundamental to reduce the reservoirs' phosphorus loading to establish a scientific and improved management system based on those researches.

The New Nordic Diet: phosphorus content and absorption.

Science.gov (United States)

Salomo, Louise; Poulsen, Sanne K; Rix, Marianne; Kamper, Anne-Lise; Larsen, Thomas M; Astrup, Arne

2016-04-01

High phosphorus content in the diet may have adverse effect on cardiovascular health. We investigated whether the New Nordic Diet (NND), based mainly on local, organic and less processed food and large amounts of fruit, vegetables, wholegrain and fish, versus an Average Danish Diet (ADD) would reduce the phosphorus load due to less phosphorus-containing food additives, animal protein and more plant-based proteins. Phosphorus and creatinine were measured in plasma and urine at baseline, week 12 and week 26 in 132 centrally obese subjects with normal renal function as part of a post hoc analysis of data acquired from a 26-week controlled trial. We used the fractional phosphorus excretion as a measurement of phosphorus absorption. Mean baseline fractional phosphorus excretion was 20.9 ± 6.6 % in the NND group (n = 82) and 20.8 ± 5.5 % in the ADD group (n = 50) and was decreased by 2.8 ± 5.1 and 3.1 ± 5.4 %, respectively, (p = 0.6) at week 26. At week 26, the mean change in plasma phosphorus was 0.04 ± 0.12 mmol/L in the NND group and -0.03 ± 0.13 mmol/L in the ADD group (p = 0.001). Mean baseline phosphorus intake was 1950 ± 16 mg/10 MJ in the NND group and 1968 ± 22 mg/10 MJ in the ADD group and decreased less in the NND compared to the ADD (67 ± 36 mg/10 MJ and -266 ± 45 mg/day, respectively, p food concept beneficial regarding phosphorus absorption.

Comparison of secondary ion emission induced in silicon oxide by MeV and KeV ion bombardment

International Nuclear Information System (INIS)

Allali, H.; Nsouli, B.; Thomas, J.P.; Szymczak, W.; Wittmaack, K.

1993-09-01

The surface and near-surface composition of SiO 2 layers, has been investigated by negative secondary ion emission mass spectrometry (SIMS) using MeV and KeV ion bombardment in combination with time-of-flight (TOF) mass analysis. The spectra recorded in the mass range 0-100 u are dominated by surface impurities, notably hydrocarbons and silicon polyanions incorporating H and OH entities. The characteristic (fragmentation) patterns are quite different for light and high-velocity ion impact. In high-velocity TOF-SIMS analysis of P-doped layers, prepared by chemical vapour deposition (CVD), the mass lines at 63 and 79 u are very prominent and appear to correlate with the phosphorus concentration (PO 2 and PO 3 , respectively). It is shown, however, that for unambiguous P analysis one has to use dynamic SIMS or high mass resolution. (author) 11 refs., 5 figs

Study of the physical phenomena in the transformation of the in vivo implanted coral, using radioactivation techniques, by means of X-ray diffraction and infrared spectrometry

International Nuclear Information System (INIS)

Oudadesse, H.

1989-01-01

By radioactivation analysis, we measured quantitatively for the first time the elementary transformation of coral in vivo. Some natural coral was implanted after having been sterilized in ovine jaws. Every month, biopsies were extracted in order to get a portion of the external cortical part, the intermediary part (initially the coral) and the internal cortical part. We measured the kinetics of the concentration of major atomic elements which constitute the biological mould such as phosphorus, calcium, magnesium, fluorine, as well as strontium of which content was abundantly found in the coral. The results show intense disturbances until the fifth month, when the mineral structure of the implanted coral becomes akin to that of bone come to maturity. In addition, with measures by diffraction by X-ray, we have followed the structural modifications by relating them to the variation in concentration of atomic elements. The coral, in the form of aragonit and stabilized by strontium as shown by neutron radioactivation crystallises in an orthorombic system. Three months after having been implanted, its structure becomes hexagonal and reaches a degree of crystallization similar to that of a bone come to maturity about the fifth month. The infrared absorption spectroscopy allowed us to fine the structure by specifying the mineral of the bone and of the implanted coral. Three months after having been implanted, the coral has become an apatite with deposit of organic substances. Moreover, a calcination at high temperature revealed a supply of phosphorus ions from the first month until the fifth month [fr

Adaptive Evolution of Phosphorus Metabolism in Prochlorococcus

DEFF Research Database (Denmark)

Casey, John R; Mardinoglu, Adil; Nielsen, Jens

2016-01-01

Inorganic phosphorus is scarce in the eastern Mediterranean Sea, where the high-light-adapted ecotype HLI of the marine picocyanobacterium Prochlorococcus marinus thrives. Physiological and regulatory control of phosphorus acquisition and partitioning has been observed in HLI both in culture...... and in the field; however, the optimization of phosphorus metabolism and associated gains for its phosphorus-limited-growth (PLG) phenotype have not been studied. Here, we reconstructed a genome-scale metabolic network of the HLI axenic strain MED4 (iJC568), consisting of 568 metabolic genes in relation to 794...... through drastic depletion of phosphorus-containing biomass components but also through network-wide reductions in phosphate-reaction participation and the loss of a key enzyme, succinate dehydrogenase. These alterations occur despite the stringency of having relatively few pathway redundancies...

Phosphorus effect on fracture properties of structural steels

International Nuclear Information System (INIS)

Goritskij, V.M.; Guseva, I.A.

1985-01-01

Phosphorus content is studied for its effect on fracture peculiarities and fracture toughness. It is supposed that the phosphorus effect on ductile fractures is associated with phosphorus segregation on the ferrite-carbide interfaces. An increase of the phosphorus content in heat-treated 10KhSND steel from 0.020 up to 0.043 wt.% results in a decrease of the pore size and asub(p) value. Close linear correlation is established between critical temperature of embrittlement T 50 and √ asub(p) or √ KC values for a number of structural steels with different phosphorus content

Sustainable Phosphorus Chemistry: A Silylphosphide Synthon for the Generation of Value-Added Phosphorus Chemicals.

Science.gov (United States)

Slootweg, J Chris

2018-05-07

Avoiding white phosphorus: Cummins and Geeson have recently described the conversion of phosphoric acid into the novel bis(trichlorosilyl)phosphide anion, which serves as a key intermediate in the synthesis of organophosphines, hexafluorophosphate, and phosphine gas in a reaction sequence that does not rely on white phosphorus. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

Directory of Open Access Journals (Sweden)

Jhovani Bornacelli

2013-01-01

Full Text Available We studied the photoluminescence (PL of Si nanocrystals (Si-NCs embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au, and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H2/N2 and Ar to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

Thermal migration of iron implanted in aluminium at high doses

International Nuclear Information System (INIS)

Asundi, V.K.; Joshi, M.C.; Deb, S.K.; Soud, D.K.; Kulkarni, V.N.; Sundararaman, M.

1978-01-01

The anneal behaviour of the Fe-Al metastable system produced by implantation of Fe + ions at 30 keV has been reported. The implant concentrations between 18-42 at percent have been chosen, in order to exceed the normal solid solubility of Fe in Al by about three orders of magnitude. Isothermal annealing has been done under vacuum (55 x 10 -6 Torr) at 400deg C and 570 deg C. The iron depth profiles have been determined, by Rutherford backscattering of 2 MeV He + ions. It has been found that 1) as annealing proceeds, all specimens show rapid enhanced diffusion initially (upto about 30 m), followed by a much slower diffusion as iron ions migrate inwards (2) at implant concentrations 23 at percent, double peaks appear in iron depth profiles, followed by rapid migration of diffused iron towards surface and (3) at still higher anneal times, the out-diffused iron moves inward again. This kind of out-diffusion behaviour in a metallic system has not been reported earlier in the literature. Also, the presence of Fe 4 Al 13 has been identified as terminal phase, using x-ray diffraction techniques. (K.B.)

Electric Conductivity of Phosphorus Nanowires

International Nuclear Information System (INIS)

Jing-Xiang, Zhang; Hui, Li; Xue-Qing, Zhang; Kim-Meow, Liew

2009-01-01

We present the structures and electrical transport properties of nanowires made from different strands of phosphorus chains encapsulated in carbon nanotubes. Optimized by density function theory, our results indicate that the conductance spectra reveal an oscillation dependence on the size of wires. It can be seen from the density of states and current-voltage curves that the structure of nanowires affects their properties greatly. Among them, the DNA-like double-helical phosphorus nanowire exhibits the distinct characteristic of an approximately linear I – V relationship and has a higher conductance than others. The transport properties of phosphorus nanowires are highly correlated with their microstructures. (condensed matter: structure, mechanical and thermal properties)

Production of carrier-free phosphorus-33 at MURR

International Nuclear Information System (INIS)

Jia, W.; Ketring, A.R.; Schuh, J.; Lanigan, J.; Ma, D.; Manson, L.; Chanley, D.

1996-01-01

Phosphorus-33, a new radionuclide used in medical and biochemical research, is produced at the University of Missouri research reactor (MURR) in production quantities. Phosphorus-33 has a longer shelf life and lower dose rates than phosphorus-32. Recently, the MURR and New England Nuclear (NEN) jointly developed a method to recover carrier-free phosphorus-33 as well as the enriched sulfur target using a sublimation technique at reduced pressure

Electrical activation of nitrogen heavily implanted 3C-SiC(1 0 0)

Energy Technology Data Exchange (ETDEWEB)

Li, Fan, E-mail: f.li.1@warwick.ac.uk [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Sharma, Yogesh; Shah, Vishal; Jennings, Mike [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Pérez-Tomás, Amador [ICN2 – Institut Catala de Nanociència i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Myronov, Maksym [Physics Department, University of Warwick, Coventry CV4 7AL (United Kingdom); Fisher, Craig [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Leadley, David [Physics Department, University of Warwick, Coventry CV4 7AL (United Kingdom); Mawby, Phil [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom)

2015-10-30

Highlights: • Nitrogen is fully activated by 1175 °C annealing for 1.5 × 10{sup 19} cm{sup −3} doped 3C-SiC. • Free donor concentration is found to readily saturate in 3C-SiC at ∼7 × 10{sup 19} cm{sup −3}. • 3C-SiC is found to have complete donor thermal ionization above 150 K. • Donor in 1.5 × 10{sup 19} cm{sup −3} nitrogen implanted 3C-SiC has an energy level ∼15 meV. • The SiO{sub 2} cap is found to have a bigger influence on low and medium doped samples. - Abstract: A degenerated wide bandgap semiconductor is a rare system. In general, implant levels lie deeper in the band-gap and carrier freeze-out usually takes place at room temperature. Nevertheless, we have observed that heavily doped n-type degenerated 3C-SiC films are achieved by nitrogen implantation level of ∼6 × 10{sup 20} cm{sup −3} at 20 K. According to temperature dependent Hall measurements, nitrogen activation rates decrease with the doping level from almost 100% (1.5 × 10{sup 19} cm{sup −3}, donor level 15 meV) to ∼12% for 6 × 10{sup 20} cm{sup −3}. Free donors are found to saturate in 3C-SiC at ∼7 × 10{sup 19} cm{sup −3}. The implanted film electrical performances are characterized as a function of the dopant doses and post implantation annealing (PIA) conditions by fabricating Van der Pauw structures. A deposited SiO{sub 2} layer was used as the surface capping layer during the PIA process to study its effect on the resultant film properties. From the device design point of view, the lowest sheet resistivity (∼1.4 mΩ cm) has been observed for medium doped (4 × 10{sup 19} cm{sup −3}) sample with PIA 1375 °C 2 h without a SiO{sub 2} cap.

Radiation chemical research around a 15 MeV high average power linac

International Nuclear Information System (INIS)

Lahorte, P.; Mondelaers, W.; Masschaele, B.; Cauwels, P.

1998-01-01

Complete text of publication follows. The Laboratory of Subatomic and Radiation Physics of the University of Gent is equipped with a 15 MeV 20 kW linear electron accelerator (linac) facility. This accelerator was initially designed for fundamental nuclear physics research but was modified to generate beams for new experimental interdisciplinary projects. In its present configuration the accelerator is used as a multipurpose apparatus for research in the fields of polymer chemistry (crosslinking), biomaterials (hydrogels, drug delivery systems, implants), medicine (extracorporeal bone irradiation, human grafts), biomedical materials, food technology (package materials, food preservation), dosimetry (EPR of alanine systems, geldosimetry), solid-state physics, agriculture and nuclear and radiation physics. In this paper an overview will be presented of both the various research projects around our linac facility involving radiation chemistry and the specialised technologies facilitating this research

Interference fringes in synchrotron section topography of implanted silicon with a very large ion range

International Nuclear Information System (INIS)

Wieteska, K.; Dluzewska, K.; Wierzchowski, W.; Graeff, W.

1997-01-01

Silicon crystals implanted with 9 MeV protons to the dose of 5x10 17 cm -2 were studied with X-ray topographic methods using both conventional and synchrotron radiation sources. After the implantation the crystals were thermally and electron annealed. The implantation produced large 600 μm thick shot-through layer while the total thickness of the samples was 1.6 mm. It was confirmed by means of double crystal topography that the whole crystal was elastically bent. The transmission section patterns revealed both parts of the implanted crystal separated by strong contrasts coming from the most damaged layer and distinct interference fringes which appeared on one side of the topograph only. The locations of the fringes changed when the beam entered the other side of the sample. The mechanism of fringe formation was studied with numerical integration of the Takagi-Taupin equations, especially studying the intensity distribution in the diffraction plane. The simulations reproduced the location of the fringes in different geometries and indicate that they can be caused both by variable crystal curvature and variable ion dose. (author)

Rapid thermal and swift heavy ion induced annealing of Co ion implanted GaN films

International Nuclear Information System (INIS)

Baranwal, V.; Pandey, A. C.; Gerlach, J. W.; Rauschenbach, B.; Karl, H.; Kanjilal, D.; Avasthi, D. K.

2008-01-01

Thin epitaxial GaN films grown on 6H-SiC(0001) substrates were implanted with 180 keV Co ions at three different fluences. As-implanted samples were characterized with secondary ion mass spectrometry and Rutherford backscattering spectrometry to obtain the Co depth profiles and the maximum Co concentrations. As-implanted samples were annealed applying two different techniques: rapid thermal annealing and annealing by swift heavy ion irradiation. Rapid thermal annealing was done at two temperatures: 1150 deg. C for 20 s and 700 deg. C for 5 min. 200 MeV Ag ions at two fluences were used for annealing by irradiation. Crystalline structure of the pristine, as-implanted, and annealed samples was investigated using x-ray diffraction, and the results were compared. Improvement of the crystalline quality was observed for rapid thermal annealed samples at the higher annealing temperature as confirmed with rocking curve measurements. The results indicate the presence of Co clusters in these annealed samples. Swift heavy ion irradiation with the parameters chosen for this study did not lead to a significant annealing

Prevalence of phosphorus containing food additives in grocery stores

Directory of Open Access Journals (Sweden)

Janeen B. Leon

2012-06-01

In conclusion, phosphorus additives are commonly present in groceries and contribute significantly to the phosphorus content of foods. Moreover, phosphorus additive foods are less costly than additive-free foods. As a result, phosphorus additives may be an important contributor to hyperphosphatemia among persons with chronic kidney disease

An angle-resolved, wavelength-dispersive x-ray fluorescence spectrometer for depth profile analysis of ion-implanted semiconductors using synchrotron radiation

Science.gov (United States)

Schmitt, W.; Hormes, J.; Kuetgens, U.; Gries, W. H.

1992-01-01

An apparatus for angle-resolved, wavelength-dispersive x-ray fluorescence spectroscopy with synchrotron radiation has been built and tested at the beam line BN2 of the Bonn electron stretcher and accelerator (ELSA). The apparatus is to be used for nondestructive depth profile analysis of ion-implanted semiconductors as part of the multinational Versailles Project of Advanced Materials and Standards (VAMAS) project on ion-implanted reference materials. In particular, the centroid depths of depth profiles of various implants is to be determined by use of the angle-resolved signal ratio technique. First results of measurements on implants of phosphorus (100 keV, 1016 cm-2) and sulfur (200 keV, 1014 cm-2) in silicon wafers using ``white'' synchrotron radiation are presented and suggest that it should be generally possible to measure the centroid depth of an implant at dose densities as low as 1014 cm-2. Some of the apparative and technical requirements are discussed which are peculiar to the use of synchrotron radiation in general and to the use of nonmonochromatized radiation in particular.

An angle-resolved, wavelength-dispersive x-ray fluorescence spectrometer for depth profile analysis of ion-implanted semiconductors using synchrotron radiation

International Nuclear Information System (INIS)

Schmitt, W.; Hormes, J.; Kuetgens, U.; Gries, W.H.

1992-01-01

An apparatus for angle-resolved, wavelength-dispersive x-ray fluorescence spectroscopy with synchrotron radiation has been built and tested at the beam line BN2 of the Bonn electron stretcher and accelerator (ELSA). The apparatus is to be used for nondestructive depth profile analysis of ion-implanted semiconductors as part of the multinational Versailles Project of Advanced Materials and Standards (VAMAS) project on ion-implanted reference materials. In particular, the centroid depths of depth profiles of various implants is to be determined by use of the angle-resolved signal ratio technique. First results of measurements on implants of phosphorus (100 keV, 10 16 cm -2 ) and sulfur (200 keV, 10 14 cm -2 ) in silicon wafers using ''white'' synchrotron radiation are presented and suggest that it should be generally possible to measure the centroid depth of an implant at dose densities as low as 10 14 cm -2 . Some of the apparative and technical requirements are discussed which are peculiar to the use of synchrotron radiation in general and to the use of nonmonochromatized radiation in particular

The Adequacy of Phosphorus Binder Prescriptions Among American Hemodialysis Patients

Science.gov (United States)

Huml, Anne M.; Sullivan, Catherine M.; Leon, Janeen B.; Sehgal, Ashwini R.

2013-01-01

Because hemodialysis treatment has a limited ability to remove phosphorus, dialysis patients must restrict dietary phosphorus intake and use phosphorus binding medication. Among patients with restricted dietary phosphorus intake (1000 mg/d), phosphorus binders must bind about 250 mg of excess phosphorus per day and among patients with more typical phosphorus intake (1500 mg/d), binders must bind about 750 mg per day. To determine the phosphorus binding capacity of binder prescriptions among American hemodialysis patients, we undertook a cross-sectional study of a random sample of in-center chronic hemodialysis patients. We obtained data for one randomly selected patient from 244 facilities nationwide. About one-third of patients had hyperphosphatemia (serum phosphorus level > 5.5 mg/dL). Among the 224 patients prescribed binders, the mean phosphorus binding capacity was 256 mg/d (SD 143). 59% of prescriptions had insufficient binding capacity for restricted dietary phosphorus intake, and 100% had insufficient binding capacity for typical dietary phosphorus intake. Patients using two binders had a higher binding capacity than patients using one binder (451 vs. 236 mg/d, p phosphorus balance. Use of two binders results in higher binder capacity. Further work is needed to understand the impact of binder prescriptions on mineral balance and metabolism and to determine the value of substantially increasing binder prescriptions. PMID:23013171

Preliminary analysis of phosphorus flow in Hue Citadel.

Science.gov (United States)

Anh, T N Q; Harada, H; Fujii, S; Anh, P N; Lieu, P K; Tanaka, S

2016-01-01

Characteristics of waste and wastewater management can affect material flows. Our research investigates the management of waste and wastewater in urban areas of developing countries and its effects on phosphorus flow based on a case study in Hue Citadel, Hue, Vietnam. One hundred households were interviewed to gain insight into domestic waste and wastewater management together with secondary data collection. Next, a phosphorus flow model was developed to quantify the phosphorus input and output in the area. The results showed that almost all wastewater generated in Hue Citadel was eventually discharged into water bodies and to the ground/groundwater. This led to most of the phosphorus output flowing into water bodies (41.2 kg P/(ha year)) and ground/groundwater (25.3 kg P/(ha year)). Sewage from the sewer system was the largest source of phosphorus loading into water bodies, while effluent from on-site sanitation systems was responsible for a major portion of phosphorus into the ground/groundwater. This elevated phosphorus loading is a serious issue in considering surface water and groundwater protection.

Isotopic techniques to study phosphorus cycling in soils

International Nuclear Information System (INIS)

Manjaiah, K.M.; Sreenivasa Chari, M.; Sachdev, P.; Sachdev, M.S.

2008-01-01

A sound understanding of phosphorus cycling in soil system is essential in order to manage this system in a sustainable manner. Phosphorus transformations are characterized by physico-chemical (sorption-desorption) and biological processes . The transformation rates need to be taken into account while developing nutrient management strategies for economical and sustainable production. One of the important tools and the method gaining popularity for determining the gross transformation rates of nutrients in the soil is the isotopic dilution technique. The major processes in the soil-plant system which determine the distribution and bioavailability of phosphorus in various inorganic and organic soil components consist of: (1) the dissolution of soil mineral phosphates, (2) retention of phosphorus by inorganic soil constituents, (3) decomposition of organic phosphorus contained in plant, animal and microbial detritus and (4) Immobilization of phosphorus via the soil microbial biomass and plan uptake

Martensitic transformation of type 304 stainless steel by high-energy ion implantation

International Nuclear Information System (INIS)

Chayahara, A.; Satou, M.; Nakashima, S.; Hashimoto, M.; Sasaki, T.; Kurokawa, M.; Kiyama, S.

1991-01-01

The effect of high-energy ion implantation on the structural changes of type 304 stainless steel were investigated. Gold, copper and silicon ions with an energy of 1.5 MeV was implanted into stainless steel. The fluences were in the range from 5x10 15 to 10 17 ions/cm 2 . It was found that the structure of stainless steel was transformed form the austenitic to the martensitic structure by these ion implantations. This structural change was investigated by means of X-ray diffraction and transmission electron microscopy (TEM). The depth profile of the irradiated ions was also analyzed by secondary ion mass spectroscopy (SIMS) and glow discharge spectroscopy (GDS). The degree of martensitic transformation was found to be strongly dependent on the surface pretreatment, either mechanical or electrolytic polishing. When the surface damages or strains by mechanical polishing were present, the martensitic transformation was greatly accelerated presumably due to the combined action of ion irradiation and strain-enhanced transformation. Heavier ions exhibit a high efficiency for the transformation. (orig.)

The application of low angle Rutherford backscattering and channelling techniques to determine implantation induced disorder profile distributions in semiconductors

International Nuclear Information System (INIS)

Ahmed, N.A.G.; Christodoulides, C.E.; Carter, G.; Nobes, M.J.; Titov, A.I.

1980-01-01

Low angle exit (9 0 ) Rutherford backscattering geometry and channelling of 2 MeV 4 He + are employed to investigate the disorder depth profiles created by 40 keV N + implantation in (111) silicon and (100) GaAs targets. Parameters which can influence the disordering rate and its spatial distribution, such as ion fluence flux, substrate type and substrate temperature are examined. Under certain implantation conditions, the damage profile distributions are asymmetric - exhibiting a bimodal form in silicon targets or confined much closer to the GaAs surface than the normally expected mean range of 40 keV N + ions. (orig.)

Radioactive implants for medical applications; Radioaktive Implantate fuer medizinische Anwendungen

Energy Technology Data Exchange (ETDEWEB)

Schubert, M.

2008-07-01

dosimetry of 1-2 MeV electrons, the challenge arises from the short range (few millimeters only) in the tissue and the resulting steep dose decay. Therefore a Monte Carlo Simulation has been developed, based on the library GEANT4. In this dose planning system, apart form the possibility of schematic geometry, calculations based on patients computer tomography data have been made possible. For the validation of this simulation, a system for three-dimensional dosimetric measurements has been developed by means of a plastic scintillator in a water phantom. The simulations could be reproduced within a deviation of 10%. Furthermore, to establish a quality control for each implant produced, an electron counter system has been developed to measure activity. The calibration has been carried out by liquid scintillation counting. Additionally, Monte Carlo Simulations have been performed to allow for calibration of implant materials, which can hardly be diluted such as the used materials silicone or nickel titanium alloys. The measured changes of the material properties of silicone and the bioabsorbable polymer PLGA, which occur due to the production process, were reasonable, confirming the suitability as an implant material, in particular for the long-lasting fixation of the radionuclide. The implants have been tested in the context of two preclinical studies: (i) Otorhinolaryngology faces problems with congested paranasal sinuses, which entail infections. By the implantation of a radioactive silicone stent with an irradiation time of 7 days, it has been shown that an artificially created opening can be kept open on a long-term basis. (ii) In the field of ophthalmology the glaucoma is a wide-spread disease, which can cause blindness, resulting from an elevated intra-ocular pressure. However, it can be treated by a surgical intervention. For the first time, a bioabsorbable, radioactive implant has been used that is suitable to keep the artificially created drainage open, and hence, is

Performance of fertigation technique for phosphorus application in cotton

Directory of Open Access Journals (Sweden)

M. Aslam

2009-05-01

Full Text Available Low native soil phosphorus availability coupled with poor utilization of added phosphorus is one of the major constraints limiting the productivity of the crops. With a view of addressing this issue, field studies were conducted to compare the relative efficacy of broadcast and fertigation techniques for phosphorus application during 2005-2006 using cotton as a test crop. Two methods of phosphorus application i.e. broadcast and fertigation were evaluated using five levels of P2O5 (0, 30, 45, 60 and 75 kg P2O5 ha -1. Fertigation showed an edge over broadcast method at all levels of phosphorus application. The highest seed cotton yield was recorded with 75 kg P2O5 ha-1. Fertilizer phosphorus applied at the rate of 60 kg ha-1 through fertigation produced 3.4 tons ha-1 of seed cotton yield, which was statistically identical to 3.3 tons recorded with 75 kg ha-1 of broadcast phosphorus. Agronomic performance of phosphorus was influenced considerably by either method of fertilizer application. The seed cotton yield per kg of fertigation phosphorus was 48% higher than the corresponding broadcast application. The results of these studies showed that fertigation was the most efficient method of phosphorus application compared with the conventional broadcast application of fertilizers.

Reaching ultra low phosphorus concentrations by filtration techniques

NARCIS (Netherlands)

Scherrenberg, S.M.

2011-01-01

This research deals with tertiary treatment techniques used for the removal of phosphorus from wastewater treatment plant (WWTP) effluent. The main objective of this research is to obtain ultra low total phosphorus (<0.15 mg total phosphorus/L) concentrations by coagulation, flocculation and

Determination of traces of phosphorus using isotope exchange

International Nuclear Information System (INIS)

Zeman, A.; Kratzer, K.

1976-01-01

A simple and selective radioanalytical method for the determination of phosphorus (0.015 - 5 μg in a 5 ml sample), based on the heterogeneous isotope exchange, has been developed. The sample containing phosphorus is shaken in the presence of molybdate with a standard solution of tetraphenylarsonium molybdophosphate labelled with phosphorus-32 in 1-2 dicloroethan. From the distribution of the activity between the aqueous and organic phases the amount of phosphorus in the sample can be determined. (Authors)

Patient education for phosphorus management in chronic kidney disease

Directory of Open Access Journals (Sweden)

Kalantar-Zadeh K

2013-05-01

Full Text Available Kamyar Kalantar-ZadehHarold Simmons Center for Kidney Disease Research and Epidemiology, Division of Nephrology and Hypertension, University of California Irvine’s School of Medicine, Irvine, CA, USAObjectives: This review explores the challenges and solutions in educating patients with chronic kidney disease (CKD to lower serum phosphorus while avoiding protein insufficiency and hypercalcemia.Methods: A literature search including terms “hyperphosphatemia,” “patient education,” “food fatigue,” “hypercalcemia,” and “phosphorus–protein ratio” was undertaken using PubMed.Results: Hyperphosphatemia is a strong predictor of mortality in advanced CKD and is remediated via diet, phosphorus binders, and dialysis. Dietary counseling should encourage the consumption of foods with the least amount of inorganic or absorbable phosphorus, low phosphorus-to-protein ratios, and adequate protein content, and discourage excessive calcium intake in high-risk patients. Emerging educational initiatives include food labeling using a “traffic light” scheme, motivational interviewing techniques, and the Phosphate Education Program – whereby patients no longer have to memorize the phosphorus content of each individual food component, but only a “phosphorus unit” value for a limited number of food groups. Phosphorus binders are associated with a clear survival advantage in CKD patients, overcome the limitations associated with dietary phosphorus restriction, and permit a more flexible approach to achieving normalization of phosphorus levels.Conclusion: Patient education on phosphorus and calcium management can improve concordance and adherence and empower patients to collaborate actively for optimal control of mineral metabolism.Keywords: hyperphosphatemia, renal diet, phosphorus binders, educational programs, food fatigue, concordance

The phosphorus and the transition metals chemistry

International Nuclear Information System (INIS)

Mathey, F.

1988-01-01

The 1988 progress report, concerning the Polytechnic School unit (France), which studies the phosphorus and the transition metals chemistry, is presented. The laboratory activities are related to the following topics: the phosporus heterocyclic chemistry, the phosphorus-carbon double bonds chemistry, the new transition metals phosphorus compounds, the phosphonates and their uses. Some practical applications of homogeneous catalysis and new materials synthesis are investigated. The main results obtained are: the discovery of the tetra-phosphafulvalenes, the utilization of a new synthesis method of the phosphorus-carbon double bonds and the stabilization of the α-phosphonyled carbanions by the lithium diisopropylamidourea. The papers, the congress communications and the thesis are also shown [fr

Management of Natural and Added Dietary Phosphorus Burden in Kidney Disease

Science.gov (United States)

Cupisti, Adamasco; Kalantar-Zadeh, Kamyar

2018-01-01

Phosphorus retention occurs from higher dietary phosphorus intake relative to its renal excretion or dialysis removal. In the gastrointestinal tract the naturally existing organic phosphorus is only partially (~60%) absorbable; however, this absorption varies widely and is lower for plant-based phosphorus including phytate (80%). The latter phosphorus often remains unrecognized by patients and health care professionals, even though it is widely used in contemporary diets, in particular low-cost foods. In a non-enhanced mixed diet, the digestible phosphorus is closely correlated with total protein content, making protein-rich foods a main source of natural phosphorus. Phosphorus burden is more appropriately limited in pre-dialysis patients who are on low protein diets (~0.6 g/kg/day), whereas dialysis patients who require higher protein intake (~1.2 g/kg/day) are subject to a higher dietary phosphorus load. An effective and patient-friendly approach to reduce phosphorus intake without depriving patients of adequate proteins is to educate patients to avoid foods with high phosphorus relative to protein such as egg yolk and those with high amounts of phosphorus-based preservatives such as certain soft drinks and enhanced cheese and meat. Protein-rich foods should be prepared by boiling, which reduces phosphorus as well as sodium and potassium content, or by other types of cooking induced demineralization. The dose of phosphorus-binding therapy should be adjusted separately for the amount and absorbability of phosphorus in each meal. Dietician counselling to address the foregoing aspects of dietary phosphorus management is instrumental for achieving reduction of phosphorus load. PMID:23465504

phosphorus retention data and metadata

Science.gov (United States)

phosphorus retention in wetlands data and metadataThis dataset is associated with the following publication:Lane , C., and B. Autrey. Phosphorus retention of forested and emergent marsh depressional wetlands in differing land uses in Florida, USA. Wetlands Ecology and Management. Springer Science and Business Media B.V;Formerly Kluwer Academic Publishers B.V., GERMANY, 24(1): 45-60, (2016).

Electrically-inactive phosphorus re-distribution during low temperature annealing

Science.gov (United States)

Peral, Ana; Youssef, Amanda; Dastgheib-Shirazi, Amir; Akey, Austin; Peters, Ian Marius; Hahn, Giso; Buonassisi, Tonio; del Cañizo, Carlos

2018-04-01

An increased total dose of phosphorus (P dose) in the first 40 nm of a phosphorus diffused emitter has been measured after Low Temperature Annealing (LTA) at 700 °C using the Glow Discharge Optical Emission Spectrometry technique. This evidence has been observed in three versions of the same emitter containing different amounts of initial phosphorus. A stepwise chemical etching of a diffused phosphorus emitter has been carried out to prepare the three types of samples. The total P dose in the first 40 nm increases during annealing by 1.4 × 1015 cm-2 for the sample with the highly doped emitter, by 0.8 × 1015 cm-2 in the middle-doped emitter, and by 0.5 × 1015 cm-2 in the lowest-doped emitter. The presence of surface dislocations in the first few nanometers of the phosphorus emitter might play a role as preferential sites of local phosphorus gettering in phosphorus re-distribution, because the phosphorus gettering to the first 40 nm is lower when this region is etched stepwise. This total increase in phosphorus takes place even though the calculated electrically active phosphorus concentration shows a reduction, and the measured sheet resistance shows an increase after annealing at a low temperature. The reduced electrically active P dose is around 0.6 × 1015 cm-2 for all the emitters. This can be explained with phosphorus-atoms diffusing towards the surface during annealing, occupying electrically inactive configurations. An atomic-scale visual local analysis is carried out with needle-shaped samples of tens of nm in diameter containing a region of the highly doped emitter before and after LTA using Atom Probe Tomography, showing phosphorus precipitates of 10 nm and less before annealing and an increased density of larger precipitates after annealing (25 nm and less).

Assessing the long term impact of phosphorus fertilization on phosphorus loadings using AnnAGNPS.

Science.gov (United States)

Yuan, Yongping; Bingner, Ronald L; Locke, Martin A; Stafford, Jim; Theurer, Fred D

2011-06-01

High phosphorus (P) loss from agricultural fields has been an environmental concern because of potential water quality problems in streams and lakes. To better understand the process of P loss and evaluate the effects of different phosphorus fertilization rates on phosphorus losses, the USDA Annualized AGricultural Non-Point Source (AnnAGNPS) pollutant loading model was applied to the Ohio Upper Auglaize watershed, located in the southern portion of the Maumee River Basin. In this study, the AnnAGNPS model was calibrated using USGS monitored data; and then the effects of different phosphorus fertilization rates on phosphorus loadings were assessed. It was found that P loadings increase as fertilization rate increases, and long term higher P application would lead to much higher P loadings to the watershed outlet. The P loadings to the watershed outlet have a dramatic change after some time with higher P application rate. This dramatic change of P loading to the watershed outlet indicates that a "critical point" may exist in the soil at which soil P loss to water changes dramatically. Simulations with different initial soil P contents showed that the higher the initial soil P content is, the less time it takes to reach the "critical point" where P loadings to the watershed outlet increases dramatically. More research needs to be done to understand the processes involved in the transfer of P between the various stable, active and labile states in the soil to ensure that the model simulations are accurate. This finding may be useful in setting up future P application and management guidelines.

Influence of irradiation spectrum and implanted ions on the amorphization of ceramics

International Nuclear Information System (INIS)

Zinkle, S.J.; Snead, L.L.

1995-01-01

Polycrystalline Al2O3, magnesium aluminate spinel (MgAl2O4), MgO, Si3N4, and SiC were irradiated with various ions at 200-450 K, and microstructures were examined following irradiation using cross-section TEM. Amorphization was not observed in any of the irradiated oxide ceramics, despsite damage energy densities up to ∼7 keV/atom (70 displacements per atom). On the other hand, SiC readily amorphized after damage levels of ∼0.4 dpa at room temperature (RT). Si3N4 exhibited intermediate behavior; irradiation with Fe 2+ ions at RT produced amorphization in the implanted ion region after damage levels of ∼1 dpa. However, irradiated regions outside the implanted ion region did not amorphize even after damage levels > 5 dpa. The amorphous layer in the Fe-implanted region of Si3N4 did not appear if the specimen was simultaneoulsy irradiated with 1-MeV He + ions at RT. By comparison with published results, it is concluded that the implantation of certain chemical species has a pronounced effect on the amorphization threshold dose of all five materials. Intense ionizing radiation inhibits amorphization in Si3N4, but does not appear to significantly influence the amorphization of SiC

Study of the gamma spectra emitted in a nuclear reaction - Measurement of the half-lives of the levels 6.13 MeV, 6.92 MeV and 7.12 MeV of 16O

International Nuclear Information System (INIS)

Leccia, F.

1967-01-01

When the energy shifts of the gamma spectrum released during a nuclear reaction are important compared with the detector resolution, the comparison of the experimental spectrum with theoretical spectra allows us to determine the half-life of the initial state of the transition. The calculation of the experimental spectrum implies to know the slowing-down of the recoil nucleus in the matter in order to take into account the Doppler effect. For recoil energies in the range of the MeV and for solid media, the Lindhard theory agrees well with experimental data. The phenomenon of deflection which appears at very low energies must be taken into account by restraining the measurement domain. By choosing an adequate media we can measure half-lives in the domain 1 and 100 fs without needing to take into account deflection effects. We have measured the half-life of the first 3 energy levels of 16 O (6.135 MeV, 6.923 MeV and 7.121 MeV), these levels are reached through the reaction 19 F(p,αγ) 16 O with proton incident energies ranging from 0.872 MeV to 2.42 MeV. We have used a coaxial germanium semi-conductor with lithium additions that was connected to an amplification line of Ortec type. 2 kinds of target have been used: calcium fluoride and copper fluoride evaporated on tantalum support. We have obtained the following values for the half-life: (16±4) fs for the 6.923 MeV level, (18±4) fs for the 7.121 MeV level, and for the 6.135 MeV we can only give a lower limit since the gamma decay occurs when the nucleus is at rest τ > 200 fs

Improving Passivation Process of Si Nano crystals Embedded in SiO2 Using Metal Ion Implantation

International Nuclear Information System (INIS)

Bornacelli, J.; Esqueda, J.A.R.; Fernandez, L.R.; Oliver, A.

2013-01-01

We studied the photoluminescence (PL) of Si nano crystals (Si-NCs) embedded in SiO 2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm) inside the SiO 2 achieving a robust and better protected system. After metal ion implantation (Ag or Au), and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs) could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO 2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H 2 /N 2 and Ar) to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

Doping of two-dimensional MoS2 by high energy ion implantation

Science.gov (United States)

Xu, Kang; Zhao, Yuda; Lin, Ziyuan; Long, Yan; Wang, Yi; Chan, Mansun; Chai, Yang

2017-12-01

Two-dimensional (2D) materials have been demonstrated to be promising candidates for next generation electronic circuits. Analogues to conventional Si-based semiconductors, p- and n-doping of 2D materials are essential for building complementary circuits. Controllable and effective doping strategies require large tunability of the doping level and negligible structural damage to ultrathin 2D materials. In this work, we demonstrate a doping method utilizing a conventional high-energy ion-implantation machine. Before the implantation, a Polymethylmethacrylate (PMMA) protective layer is used to decelerate the dopant ions and minimize the structural damage to MoS2, thus aggregating the dopants inside MoS2 flakes. By optimizing the implantation energy and fluence, phosphorus dopants are incorporated into MoS2 flakes. Our Raman and high-resolution transmission electron microscopy (HRTEM) results show that only negligibly structural damage is introduced to the MoS2 lattice during the implantation. P-doping effect by the incorporation of p+ is demonstrated by Photoluminescence (PL) and electrical characterizations. Thin PMMA protection layer leads to large kinetic damage but also a more significant doping effect. Also, MoS2 with large thickness shows less kinetic damage. This doping method makes use of existing infrastructures in the semiconductor industry and can be extended to other 2D materials and dopant species as well.

Positron acceleration to 200 MeV

International Nuclear Information System (INIS)

Leboutet, H.

1983-01-01

220 MeV is the energy that has to be obtained in routine operation. A standard 12m girder with SLED II can give 220 MeV minus a few percent due to not riding at the crest of the wave. In order to have the 200 MeV with only one girder, a klystron at full power all the time would be required - kept brand new. Then, for safety it is necessary to use two klystrons as designated in the SLC design. Having two klystrons gives freedom for the choice of the best arrangement. Since there will be excess rf power, it can be traded against higher gradient, shorter waveguides, larger apertures (lower shunt impedence)

A comparative study of 30MeV boron4+ and 60MeV oxygen8+ ion irradiated Si NPN BJTs

International Nuclear Information System (INIS)

Kumar, M. Vinay; Krishnaveni, S.; Yashoda, T.; Dinesh, C. M.; Krishnakumar, K. S.; Jayashree, B.; Ramani

2015-01-01

The impact of 30MeV boron 4+ and 60MeV oxygen 8+ ion irradiation on electrical characteristics of 2N3773 Si NPN Bipolar junction transistors (BJTs) is reported in the present study. The transistors were decapped and irradiated at room temperature. Gummel characteristics, DC current gain and Capacitance-voltage (C-V) characteristics were studied before and after irradiation at different fluences. DC current gain has decreased significantly in both boron and oxygen ion irradiation. Also the value of capacitance decreased 3-4 times with increase in fluence. Both 30MeV boron ion and 60MeV oxygen ion induced similar extent of degradation in electrical characteristics of the transistor

Examining metallic glass formation in LaCe:Nb by ion implantation

Directory of Open Access Journals (Sweden)

Sisson Richard

2017-01-01

Full Text Available In order to combine niobium (Nb with lanthanum (La and cerium (Ce, Nb ions were deposited within a thin film of these two elements. According to the Hume-Rothery rules, these elements cannot be combined into a traditional crystalline metallic solid. The creation of an amorphous metallic glass consisting of Nb, La, and Ce is then investigated. Amorphous metallic glasses are traditionally made using fast cooling of a solution of molten metals. In this paper, we show the results of an experiment carried out to form a metallic glass by implanting 9 MeV Nb 3+ atoms into a thin film of La and Ce. Prior to implantation, the ion volume distribution is calculated by Monte Carlo simulation using the SRIM tool suite. Using multiple methods of electron microscopy and material characterization, small quantities of amorphous metallic glass are indeed identified.

Recoil proton polarization of neutral pion photoproduction from proton in the energy range between 400 MeV and 1142 MeV

International Nuclear Information System (INIS)

Kato, S.; Miyachi, T.; Sugano, K.; Toshioka, K.; Ukai, K.

1979-08-01

The recoil proton polarization of the reaction γp → π 0 p were measured at a C.M. angle of 100 0 for incident photon energies between 451 and 1106 MeV, and at an angle of 130 0 for energies from 400 MeV to 1142 MeV. One photon decayed from a π 0 -meson and a recoil proton were detected in coincidence. Two kinds of polarization scatterers were employed. In the range of proton kinetic energy less than 420 MeV and higher than 346 MeV, carbon plates and liquid hydrogen were used for determining the polarization. Results are compared with recent phenomenological analyses. From the Comparison between the present data and the asymmetry data given by the polarized target, the contribution of the invariant amplitudes A 3 can be estimated to be small at 100 0 . (author)

Phosphorus sorption-desorption and effects of temperature, pH and salinity on phosphorus sorption in marsh soils from coastal wetlands with different flooding conditions.

Science.gov (United States)

Bai, Junhong; Ye, Xiaofei; Jia, Jia; Zhang, Guangliang; Zhao, Qingqing; Cui, Baoshan; Liu, Xinhui

2017-12-01

Wetland soils act as a sink or source of phosphorus (P) to the overlaying water due to phosphorus sorption-desorption processes. Litter information is available on sorption and desorption behaviors of phosphorus in coastal wetlands with different flooding conditions. Laboratory experiments were conducted to investigate phosphorus sorption-desorption processes, fractions of adsorbed phosphorus, and the effects of salinity, pH and temperature on phosphorus sorption on soils in tidal-flooding wetlands (TW), freshwater-flooding wetlands (FW) and seasonal-flooding wetlands (SW) in the Yellow River Delta. Our results showed that the freshly adsorbed phosphorus dominantly exists in Occluded-P and Fe/AlP and their percentages increased with increasing phosphorus adsorbed. Phosphorus sorption isotherms could be better described by the modified Langmuir model than by the modified Freundlich model. A binomial equation could be properly used to describe the effects of salinity, pH, and temperature on phosphorus sorption. Phosphorus sorption generally increased with increasing salinity, pH, and temperature at lower ranges, while decreased in excess of some threshold values. The maximum phosphorus sorption capacity (Q max ) was larger for FW soils (256 mg/kg) compared with TW (218 mg/kg) and SW soils (235 mg/kg) (p < 0.05). The percentage of phosphorus desorption (P des ) in the FW soils (7.5-63.5%) was much lower than those in TW (27.7-124.9%) and SW soils (19.2-108.5%). The initial soil organic matter, pH and the exchangeable Al, Fe and Cd contents were important factors influencing P sorption and desorption. The findings of this study indicate that freshwater restoration can contribute to controlling the eutrophication status of water bodies through increasing P sorption. Copyright © 2017 Elsevier Ltd. All rights reserved.

Ion implantation into amorphous Si layers to form carrier-selective contacts for Si solar cells

International Nuclear Information System (INIS)

Feldmann, Frank; Mueller, Ralph; Reichel, Christian; Hermle, Martin

2014-01-01

This paper reports our findings on the boron and phosphorus doping of very thin amorphous silicon layers by low energy ion implantation. These doped layers are implemented into a so-called tunnel oxide passivated contact structure for Si solar cells. They act as carrier-selective contacts and, thereby, lead to a significant reduction of the cell's recombination current. In this paper we address the influence of ion energy and ion dose in conjunction with the obligatory high-temperature anneal needed for the realization of the passivation quality of the carrier-selective contacts. The good results on the phosphorus-doped (implied V oc = 725 mV) and boron-doped passivated contacts (iV oc = 694 mV) open a promising route to a simplified interdigitated back contact (IBC) solar cell featuring passivated contacts. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Conversion efficiency of lead for 30-200 MeV photons

International Nuclear Information System (INIS)

Darriulat, P.; Gygi, E.; Holder, M.; McDonald, K.T.; Pugh, H.G.; Schneider, F.; Tittel, K.

1975-01-01

The conversion efficiency of lead has been measured as a function of thickness for 44 MeV, 94 MeV and 177 MeV photons, and as a function of energy between 29 MeV and 177 Mev for thickness of one and two radiation lengths. Some additional information on multiplicity of secondary tracks and on their angular distribution was obtained using a small streamer chamber. The results obtained confirm the shower calculations of Messel and Crawford. (Auth.)

The study of Phosphorus distribution at Putrajaya Wetland

Science.gov (United States)

Mubin Zahari, Nazirul; Malek, Nur Farzana Fasiha Abdul; Fai, Chow Ming; Humaira Haron, Siti; Hafiz Zawawi, Mohd; Nazmi Ismail, Iszmir; Mohamad, Daud; Syamsir, Agusril; Sidek, Lariyah Mohd; Zakwan Ramli, Mohd; Ismail, Norfariza; Zubir Sapian, Ahmad; Noordin, Normaliza; Rahaman, Nurliyana Abdul; Muhamad, Yahzam; Mat Saman, Jarina

2018-04-01

This study is concerning phosphorus distribution in Putrajaya Wetland. Phosphorus is one of the important component in nutrients for living things be it aquatic or non – aquatic organisms. Total phosphorus (TP) results will give some information on the trophic status of surface water in water bodies. The focus of this study is to determine the total phosphorus concentration in Putrajaya Wetland which is in the inlet of the wetland then outlet of the wetland (Central Wetland Lake). The water sample is taken from Putrajaya Wetland and the test was conducted in the laboratory. The result from this study shows the results for total phosphorus according to month, sampling station and cells. Lowest total phosphate at the Central Wetland compare with all the wetland arms cells.

Electrical activation of phosphorus in silicon

International Nuclear Information System (INIS)

Goh, K.E.J.; Oberbeck, L.; Simmons, M.Y.; Clark, R.G.

2003-01-01

Full text: We present studies of phosphorus δ-doping in silicon with a view to determining the degree of electrical activation of the dopants. These results have a direct consequence for the use of phosphorus as a qubit in a silicon-based quantum computer such as that proposed by Kane. Room temperature and 4 K Hall effect measurements are presented for phosphorus δ-doped layers grown in n-type silicon using two different methods. In the first method, the δ-layer was deposited by a phosphorus effusion cell in an MBE chamber. In the second method, the Si surface was dosed with phosphine gas and then annealed to 550 deg C to incorporate P into the substrate. In both methods, the P δ-doped layer was subsequently encapsulated by ∼25 nm of Si grown epitaxially. We discuss the implications of our results on the fabrication of the Kane quantum computer

Investigation of transversal nuclear excitation in 208Pb at excitation energies between 6 MeV and 8 MeV using inelastic electron scattering

International Nuclear Information System (INIS)

Frey, R.W.

1978-01-01

Using high resolution inelastic electron scattering magnitic dipole and quadrupole excitations in 208 Pb were investigated in the energy range between 6 MeV and 8 MeV. The electron energy was 50 MeV and 63.5 MeV. With a mean absolute energy resolution of 33 kev. 44 excited states were found in the above energy range. The measured angular distributions were compared with DWBA-calculations using random phase approximated wave functions. (FKS)

Ta-ion implantation induced by a high-intensity laser for plasma diagnostics and target preparation

Energy Technology Data Exchange (ETDEWEB)

Cutroneo, M., E-mail: cutroneo@ujf.cas.cz [Nuclear Physics Institute, ASCR, 250 68 Rez (Czech Republic); Malinsky, P.; Mackova, A. [Nuclear Physics Institute, ASCR, 250 68 Rez (Czech Republic); Department of Physics, Faculty of Science, J.E. Purkinje University, Ceske mladeze 8, 400 96 Usti nad Labem (Czech Republic); Matousek, J. [Department of Physics, Faculty of Science, J.E. Purkinje University, Ceske mladeze 8, 400 96 Usti nad Labem (Czech Republic); Torrisi, L. [Department of Physics and Earth Science, Messina University, V.le F.S. d’Alcontres 31, 981 66 S. Agata, Messina (Italy); Slepicka, P. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Ullschmied, J. [Institute of Physics, ASCR, v.v.i., 182 21 Prague 8 (Czech Republic)

2015-12-15

The present work is focused on the implantation of Ta ions into silicon substrates covered by a silicon dioxide layer 50–300 nm thick. The implantation is achieved using sub-nanosecond pulsed laser ablation (10{sup 15} W/cm{sup 2}) with the objective of accelerating non-equilibrium plasma ions. The accelerated Ta ions are implanted into the exposed silicon substrates at energies of approximately 20 keV per charge state. By changing a few variables in the laser pulse, it is possible to control the kinetic energy, the yield and the angular distribution of the emitted ions. Rutherford Back-Scattering analysis was performed using 2.0 MeV He{sup +} as the probe ions to determine the elemental depth profiles and the chemical composition of the laser-implanted substrates. The depth distributions of the implanted Ta ions were compared to SRIM 2012 simulations. The evaluated results of energy distribution were compared with online techniques, such as Ion Collectors (IC) and an Ion Energy Analyser (IEA), for a detailed identification of the produced ion species and their energy-to-charge ratios (M/z). Moreover, XPS (X-ray Photon Spectroscopy) and AFM (Atomic Force Microscopy) analyses were carried out to obtain information on the surface morphology and the chemical composition of the modified implanted layers, as these features are important for further application of such structures.

Recovery of phosphorus from sewerage treatment sludge

Energy Technology Data Exchange (ETDEWEB)

Manuilova, Anastasia

1999-07-01

This thesis is a review of the current state of technologies for the removal of phosphorus from wastewater and sludge, and the recovery and re-use of phosphorus. It explains the need for phosphorus removal and describes the current removal processes. Focus is given to phosphorus crystallisation processes and to the processes which treat sewage treatment sludges into potential sources of phosphorus. An interesting possibility to recover phosphorus from sewage sludge by use of Psenner fractionation is also discussed. By this method, the following phosphate fractions of technological significance may be distinguished: (1) redox sensitive phosphates, mainly bound to Fe(OH){sub 3}; (2) phosphate adsorbed to surfaces (Al{sub 2}O{sub 3}), exchangeable against OH{sup -}, and alkali-soluble phosphate; (3) phosphate bound to CaCO{sub 3}, MgCO{sub 3} and in apatite; and (4) organically bound phosphate. The basic removal mechanisms, process schemes and treatment results are described. Two experiments with three different types of sludges from Henriksdal wastewater treatment plant in Stockholm were performed in the laboratory. It was shown that the addition of sodium hydroxide or hydrochloric acid cause the significant release of phosphate (about 80%) for all types of sludges. If a whole Psenner fractionation was performed the phosphate release is approximately 100%.

Synthesis and investigation of the structure and chemical properties of acyclic compounds of bicoordinated phosphorus with a phosphorus-carbon (p-p)/sub π/ bond

International Nuclear Information System (INIS)

Markovskii, L.N.; Romanenko, V.D.

1987-01-01

Five types of reactions of phosphoalkenes can be distinguished according to the nature of the change in the coordination number and valence of the phosphorus atom in the course of chemical conversions. There are: reactions of cyclodimerization, cycloaddition, and 1,2-addition at the P-C double bond; formation of compounds of tricoordinated pentavalent phosphorus; formation of tetracoordinated phosphorus compounds; reactions of functionalization occurring without a change in the valence and coordination number of the phosphorus atom; and reactions of 1,2-elimination, leading to compounds of monocoordinated phosphorus. This paper reviews each of these reactions in detail, using double-resonance hydrogen 1 and phosphorus 31 NMR spectra and analyzing the acquired chemical shift and spin-spin coupling constants, and also demonstrates the complexation of phosphorus with several metals

The effects of trichloroethane HCl and ion-implantation on the oxidation rate of silicon

International Nuclear Information System (INIS)

Ahmed, W.; Ahmed, E.

1994-01-01

The thermal oxidation of silicon was studied using a large-scale industrial oxidation system. The characteristics of the oxides resulting from pure hydrogen/oxygen (Hsub(2)/Osub(2)), trichloroethane/oxygen (TCA/Osub(2) and hydrogen chloride/oxygen (HCI/Osub(2)) mixtures are compared. Both HCI and TCA addition to oxygen produced an enhanced oxidation rate. The oxidation rate for TCA/Osub(2) was approximately 30-40% higher than for HCI/Osub(2) mixtures. A molar ratio of TCA/Osub(2) of 1% gives an optimum process for very-large-scale industrial (VLSI) applications. However, 3% HCI/Osub(2) gives comparable results to 1% TCA. In addition, boron and phosphorus implantation are observed to increase the oxidation rate. Phosphorus doping of the silicon yields a higher rate than boron-doped wafers. This behaviour is explained in terms of surface damage and chemistry. It appears that the overall mechanisms governing all these processes are similar. (8 figures, 22 references) (Author)

The challenge of controlling phosphorus in chronic kidney disease.

Science.gov (United States)

Cannata-Andía, Jorge B; Martin, Kevin J

2016-04-01

The pathogenesis and management of chronic kidney disease-mineral bone disorders (CKD-MBD) has experienced major changes, but the control of serum phosphorus at all stages of CKD still seems to be a key factor to improve clinical outcomes. High serum phosphorus is the most important uremia-related, non-traditional risk factor associated with vascular calcification in CKD patients and in the general population. Phosphorus may also be one of the key elements linking vascular calcification with low bone turnover. The main hormones and factors that contribute to the kidney regulation of phosphorus and calcium include parathyroid hormone, FGF-23, klotho and 1,25-dihydroxyvitamin D (1,25(OH)2D). Serum phosphorus did not start rising until CKD 3b in contrast with the earlier changes observed with fibroblast growth factor-23 (FGF-23), Klotho, calcitriol and parathyroid hormone (PTH). Despite FGF-23 and PTH having synergic effects regarding phosphorus removal, they have opposite effects on 1,25(OH)2D3. At the same stages of CKD in which phosphorus retention appears to occur, calcium retention also occurs. As phosphorus accumulation is associated with poor outcomes, an important question without a clear answer is at which level-range should serum phosphorus be maintained at different stages of CKD to improve clinical outcomes. There are four main strategies to manage phosphate homeostasis; phosphorus dietary intake, administration of phosphate binder agents, effective control of hyperparathyroidism and to ensure in the CKD 5D setting, an adequate scheme of dialysis. Despite all the available strategies, and the introduction of new phosphate binder agents in the market, controlling serum phosphorus remains challenging, and hyperphosphatemia continues to be extremely common in CKD 5 patients. Furthermore, despite phosphate binding agents having proved to be effective in reducing serum phosphorus, their ultimate effects on clinical outcomes remain controversial. Thus, we still

Availability for plants of phosphorus in some virgin peat samples

Directory of Open Access Journals (Sweden)

Armi Kaila

1958-01-01

Full Text Available The availability to plants of native peat phosphorus was studied by chemical methods and by a pot experiment in which three successive oat crops were grown with peat as the only source of phosphorus. The eight samples were collected from virgin peat lands. They were air-dried and ground. The samples were found to represent three different types of phosphorus condition: the first group contained relatively high amounts of inorganic phosphorus which was fairly easily available; the second group had a very high capacity to fix phosphorus which made its high quantity of inorganic phosphorus difficultly available; the third group was very poor in total and inorganic phosphorus but the latter was easily soluble and available to plants. On the basis of the capacity and intensity factors determined according to the method by Teräsvuori and also on the basis of inorganic phosphorus extractable by water fairly reliable predictions could be made of the mutual order of the samples as phosphorus supplyer to the plants in the pot experiment. In an incubation experiment at 27°C the amounts of organic phosphorus mineralized during the period of four months were in some of the samples quite marked, even 40 mg/l, and in most of the samples they corresponded to 5 to 15 per cent of the organic phosphorus. The amounts of phosphorus taken up by the oat crops under the favourable conditions of the pot experiment varied from 11 to 60 mg/l or from 20 to 120 kg/ha.

Recovery of phosphorus compounds from thermally-processed wastes

Science.gov (United States)

Czechowska-Kosacka, A.; Pawłowski, L.; Niedbala, G.; Cel, W.

2018-05-01

Depletion of phosphorus deposits is one of the most serious global problems, which may soon lead to a crisis in food production. It is estimated that if the current living standard is maintained, the available reserves will be depleted in 130 years. Considering the principle of sustainable development, searching for alternative phosphorus sources is extremely important. The work presented the results of the research on the possibility of utilizing wastes as a source of phosphorus. The studies were conducted on poultry manure. The physicochemical properties of phosporus-rich wastes were determined as well. The fertilizing properties of ashes from poultry manure combustion – obtained from different systems, i.e. caged and barn production. The assimilability of phosphorus from the obtained ashes was determined. Potential applications of phosphorus-rich ashes were proposed as well.

Phosphorus in antique iron music wire.

Science.gov (United States)

Goodway, M

1987-05-22

Harpsichords and other wire-strung musical instruments were made with longer strings about the beginning of the 17th century. This change required stronger music wire. Although these changes coincided with the introduction of the first mass-produced steel (iron alloyed with carbon), carbon was not found in samples of antique iron harpsichord wire. The wire contained an amount of phosphorus sufficient to have impeded its conversion to steel, and may have been drawn from iron rejected for this purpose. The method used to select pig iron for wire drawing ensured the highest possible phosphorus content at a time when its presence in iron was unsuspected. Phosphorus as an alloying element has had the reputation for making steel brittle when worked cold. Nevertheless, in replicating the antique wire, it was found that lowcarbon iron that contained 0.16 percent phosphorus was easily drawn to appropriate gauges and strengths for restringing antique harpsichords.

Interaction between viologen-phosphorus dendrimers and α-synuclein

International Nuclear Information System (INIS)

Milowska, Katarzyna; Grochowina, Justyna; Katir, Nadia; El Kadib, Abdelkrim; Majoral, Jean-Pierre; Bryszewska, Maria; Gabryelak, Teresa

2013-01-01

In this study the interaction between viologen-phosphorus dendrimers and α-synuclein (ASN) was examined. Polycationic viologen-phosphorus dendrimers (two positive charges per viologen unit) are novel compounds with relatively unknown properties. The influence of these viologen dendrimers on ASN was tested using fluorimetric and circular dichroism methods. ASN contains four tyrosine residues; therefore, the influence of dendrimers on protein molecular conformation by measuring the changes in the ASN fluorescence in the presence of dendrimers was evaluated. The interaction of dendrimers with free L-tyrosine was also monitored. Results show that viologen-phosphorus dendrimers interact with ASN; they quenched the fluorescence of ASN as well as free tyrosine by dynamic and static ways. However, the quenching was not accompanied by modifications in the ASN secondary structure. - Highlights: ► Interaction between viologen-phosphorus dendrimers and α-synuclein (ASN) was investigated. ► Viologen-phosphorus dendrimers can quench the fluorescence of tyrosine in ASN. ► Dendrimers caused red-shift in maximum of fluorescence. ► Viologen-phosphorus dendrimers did not change the secondary structure of ASN.

Ocean acidification: One potential driver of phosphorus eutrophication.

Science.gov (United States)

Ge, Changzi; Chai, Yanchao; Wang, Haiqing; Kan, Manman

2017-02-15

Harmful algal blooms which may be limited by phosphorus outbreak increases currently and ocean acidification worsens presently, which implies that ocean acidification might lead to phosphorus eutrophication. To verify the hypothesis, oxic sediments were exposed to seawater with different pH 30days. If pH was 8.1 and 7.7, the total phosphorus (TP) content in sediments was 1.52±0.50 and 1.29±0.40mg/g. The inorganic phosphorus (IP) content in sediments exposed to seawater with pH8.1 and 7.7 was 1.39±0.10 and 1.06±0.20mg/g, respectively. The exchangeable phosphorus (Ex-P) content in sediments was 4.40±0.45 and 2.82±0.15μg/g, if seawater pH was 8.1 and 7.7. Ex-P and IP contents in oxic sediments were reduced by ocean acidification significantly (pocean acidification was one potential facilitator of phosphorus eutrophication in oxic conditions. Copyright © 2016 Elsevier Ltd. All rights reserved.

Recycling phosphorus by fast pyrolysis of pig manure: concentration and extraction of phosphorus combined with formation of value-added pyrolysis products

NARCIS (Netherlands)

Azuara, M.; Kersten, Sascha R.A.; Kootstra, A.M.J.

2013-01-01

In order to recycle phosphorus from the livestock chain back to the land, fast pyrolysis of concentrated pig manure at different temperatures (400 °C, 500 °C, 600 °C), was undertaken to concentrate the phosphorus in the char fraction for recovery. Results show that 92%–97% of the phosphorus present

The effects of phosphorus limitation on carbon metabolism in diatoms.

Science.gov (United States)

Brembu, Tore; Mühlroth, Alice; Alipanah, Leila; Bones, Atle M

2017-09-05

Phosphorus is an essential element for life, serving as an integral component of nucleic acids, lipids and a diverse range of other metabolites. Concentrations of bioavailable phosphorus are low in many aquatic environments. Microalgae, including diatoms, apply physiological and molecular strategies such as phosphorus scavenging or recycling as well as adjusting cell growth in order to adapt to limiting phosphorus concentrations. Such strategies also involve adjustments of the carbon metabolism. Here, we review the effect of phosphorus limitation on carbon metabolism in diatoms. Two transcriptome studies are analysed in detail, supplemented by other transcriptome, proteome and metabolite data, to gain an overview of different pathways and their responses. Phosphorus, nitrogen and silicon limitation responses are compared, and similarities and differences discussed. We use the current knowledge to propose a suggestive model for the carbon flow in phosphorus-replete and phosphorus-limited diatom cells.This article is part of the themed issue 'The peculiar carbon metabolism in diatoms'. © 2017 The Authors.

Particle energy loss spectroscopy and SEM studies of topography development in thin aluminium films implanted with high doses of helium

International Nuclear Information System (INIS)

Barfoot, K.M.; Webb, R.P.; Donnelly, S.E.

1984-01-01

Development of topography in thin (55.5 μg cm -2 ) self-supporting aluminium films, caused by high fluence (approx. 10 17 ions cm -2 ) irradiation with 5 keV helium ions, has been observed. This has been achieved by measuring the topography-enhanced energy straggling of 0.40 MeV 4 He + ions transmitted through the foils and detected with an electrostatic analyser of resolution 0.2 keV. Features, about 0.7 μm in width, are observed with scanning electron microscopy. TRIM Monte Carlo calculations of the implantation processes are performed in order to follow the helium implantation and damage depth distributions. It is deduced that a form of thin film micro-wrinkling has occurred which is caused by the relief of stress brought about by the implantation of helium. (author)

Phosphorus and nitrogen in the eutrophication of waters

International Nuclear Information System (INIS)

Salonen, S.; Frisk, T.; Kaermeniemi, T.; Niemi, J.; Pitkaenen, H.; Silvo, K.; Vuoristo, H.

1992-01-01

This report is a summary of the contribution of nitrogen and phosphorus in the eutrophication process of inland and coastal waters. Special attention was paid to the mechanisms of these nutrients in regulating biological processes and to the methods available in estimating their effects in the eutrophication of water bodies. The report includes five chapters which are entitled: Introduction, which is a general background to the subject with special attention to the requirements of the Finnish Water Act. Phosphorus and nitrogen as factors regulating biological processes. The topics included are: definition of eutrophication, forms of phosphorus and nitrogen and their sources to inland and coastal waters, effects of these nutrients as growth factors of phytoplankton and macrophytes and consequences of eutrophication. Estimation of the effects of phosphorus and nitrogen. The topics discussed from the point of view of the tasks of the National Board of Waters and the Environment are: estimation of the effects of phosphorus and nitrogen in the planning and supervision of industry, fish farming, peat production, municipalities, agriculture and forestry. A brief state-of-the art of the research carried out in the National Board of Waters and the Environment is given. Methods of estimating the effects of phosphorus and nitrogen loading in waters. The topics are: relationships between phosphorus and nitrogen concentrations in waters, material balances, water quality models, classification of waters and different groups of organisms as indicators of water quality. Conclusions for the estimation of the effects of phosphorus and nitrogen in receiving waters

Phosphorus solubility in an acid forest soil as influenced by form of applied phosphorus and liming

International Nuclear Information System (INIS)

Fransson, Ann-Mari; Bergkvist, Bo; Tyler, Germund

1999-01-01

Sedimentary phosphorus, superphosphate, and wood-ash, as well as either sedimentary phosphorus. superphosphate or ash combined with lime, were distributed in selected plots in an 80-yr-old Norway spruce forest [Picea abies (L.) Karst]. After 2 yrs, the sedimentary phosphorus had increased the oxalate/oxalic acid-extractable P in the O-horizon, and the superphosphate had increased the oxalate/oxalic acid-extractable P in the E-horizon. At first, the percolation water from the superphosphate treatment showed high P concentrations. It soon returned to control levels, however. The percolation water from the sedimentary phosphorus treatment gradually showed increased phosphate concentrations. The wood-ash increased neither the amount of extractable P nor the P concentration in the percolation water. The oxalate/oxalic acid-extractable P from the sedimentary P treatment was reduced by liming. The P concentration in the percolation water also tended to be reduced. This was perhaps due to formation of Ca phosphates in the vicinity of the lime particles. In addition, if the solubility rate was similar to the uptake rate, it could account for the decreased P concentration

Effects of white phosphorus on mallard reproduction

Science.gov (United States)

Vann, S.I.; Sparling, D.W.; Ottinger, M.A.

2000-01-01

Extensive waterfowl mortality involving thousands of ducks, geese, and swans has occurred annually at Eagle River Flats, Alaska since at least 1982. The primary agent for this mortality has been identified as white phosphorus. Although acute and subacute lethality have been described, sublethal effects are less well known. This study reports on the effects of white phosphorus on reproductive function in the mallard (Anas platyrhynchos) in captivity. Fertility, hatching success, teratogenicity, and egg laying frequency were examined in 70 adult female mallards who received up to 7 daily doses of 0, 0.5, 1.0, and 2.0 mg/kg of white phosphorus. Measurements of fertility and hatchability were reduced by the white phosphorus. Teratogenic effects were observed in embryos from hens dosed at all treatment levels. Egg laying frequency was reduced even at the lowest treatment level; treated hens required a greater number of days to lay a clutch of 12 eggs than control hens. After two doses at 2.0 mg/kg, all females stopped laying completely for a minimum of 10 days and laying frequency was depressed for at least 45 days. Fertility of 10 adult male mallards dosed with 1.0 mg/kg of white phosphorus did not differ from 10 controls, but plasma testosterone levels were significantly (p free-ranging mallards may be impaired if they are exposed to white phosphorus at typical field levels.

Black phosphorus saturable absorber for ultrashort pulse generation

Energy Technology Data Exchange (ETDEWEB)

Sotor, J., E-mail: jaroslaw.sotor@pwr.edu.pl; Sobon, G.; Abramski, K. M. [Laser and Fiber Electronics Group, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, Wroclaw 50-370 (Poland); Macherzynski, W.; Paletko, P. [Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, Wroclaw 50-372 (Poland)

2015-08-03

Low-dimensional materials, due to their unique and versatile properties, are very interesting for numerous applications in electronics and optoelectronics. Recently rediscovered black phosphorus, with a graphite-like layered structure, can be effectively exfoliated up to the single atomic layer called phosphorene. Contrary to graphene, it possesses a direct band gap controllable by the number of stacked atomic layers. For those reasons, black phosphorus is now intensively investigated and can complement or replace graphene in various photonics and electronics applications. Here, we demonstrate that black phosphorus can serve as a broadband saturable absorber and can be used for ultrashort optical pulse generation. The mechanically exfoliated ∼300 nm thick layers of black phosphorus were transferred onto the fiber core, and under pulsed excitation at 1560 nm wavelength, its transmission increases by 4.6%. We have demonstrated that the saturable absorption of black phosphorus is polarization sensitive. The fabricated device was used to mode-lock an Er-doped fiber laser. The generated optical solitons with the 10.2 nm bandwidth and 272 fs duration were centered at 1550 nm. The obtained results unambiguously show that black phosphorus can be effectively used for ultrashort pulse generation with performances similar or even better than currently used graphene or carbon nanotubes. This application of black phosphorus proves its great potential to future practical use in photonics.

3D microscopy of hydrogen and magnetic force on proton implanted microstructures in graphite

International Nuclear Information System (INIS)

Reichart, P.; Cluitmans, J.F.J.; Pakes, C.; Orbons, S.; Jamieson, D.N.

2005-01-01

We investigated the depth dependence of magnetic signals in proton irradiated graphite using a tilted microspot implantation followed by combined AFM/MFM analysis. This study is motivated by the not yet independently reproduced discovery of ferromagnetism in carbon materials created by proton irradiation. We present results of 3D hydrogen analysis of pristine and irradiated highly oriented pyrolytic graphite (HOPG). These results, previously presented in collaboration with universities in Leipzig and Munich, are summarized here and reveal a hydrogen level in pristine HOPG less than 0.3 at-ppm and that 2.25 MeV implanted hydrogen is located within a peak confined to the end of range with no evidence of diffusion broadening. For implanted microspots, up to 40 at-% of the implanted hydrogen is not detected, providing support for lateral hydrogen diffusion. Up to 10 16 H-atoms/cm 2 are detected in the near-surface region on all samples, which has not yet been considered in possible mechanisms for creation of ferromagnetism. As theoretical models propose that hydrogen could play a major role in carbon ferromagnetism, this result raises the hypothesis for an effect restricted to the surface. Our preliminary data on magnetic force microscopy of tilted implants show a strong magnetic phase shift localized on the beam entrance point only. (author). 14 refs., 5 figs

Cavities at the Si projected range by high dose and energy Si ion implantation in Si

International Nuclear Information System (INIS)

Canino, M.; Regula, G.; Lancin, M.; Xu, M.; Pichaud, B.; Ntzoenzok, E.; Barthe, M.F.

2009-01-01

Two series of n-type Si samples α and β are implanted with Si ions at high dose (1 x 10 16 ) and high energies, 0.3 and 1.0 MeV, respectively. Both sort of samples are then implanted with 5 x 10 16 He cm -2 (at 10 or 50 keV) and eventually with B atoms. Some of the samples are annealed at temperatures ranging from 800 to 1000 deg. C to allow the thermal growth of He-cavities, located between sample surface and the projected range (R p ) of Si. After the triple ion implantation, which corresponds to defect engineering, samples were characterized by cross-section transmission electron microscopy (XTEM). Voids (or bubbles) are observed not only at the R p (He) on all annealed samples, but also at the R p (Si) on β samples implanted with He at 50 keV. The samples are also studied by positron annihilation spectroscopy (PAS) and the spectra confirm that as-implanted samples contain di-vacancies and that the annealed ones, even at high temperature have bigger open volumes, which are assumed to be the same voids observed by XTEM. It is demonstrated that a sole Si implantation at high energy and dose is efficient to create cavities which are thermally stable up to 1000 deg. C only in the presence of He.

Simultaneous Nuclear Reaction Analysis of Boron and Phosphorus in Thin Borophosphosilicate Glass Films Using (α,p) Reactions

International Nuclear Information System (INIS)

Walsh, D.S.; Doyle, B.L.

1999-01-01

A method combining (α,p) NRA and ellipsometry has been developed for measuring the Boron and Phosphorus content of borophosphosilicate glass (BPSG) used for interlevel dielectrics in integrated circuits. Yields from the 31 P(α,p 0 ) 34 S (Q = 0.63 MeV) and 10 B(α,p 0 ) 13 C (Q = 4.06 MeV) reactions are coupled with ellipsometry thickness measurements to calculate the average atomic percent of B and P in the film. Due to the relatively low Q value of the 31 P(α,p 0 ) 34 S reaction and the thickness range of the glass films (le 1.2 micrometers) they analyze, fairly high energy alpha particles, and Mylar range foils on the detector are required. Alpha energy, detector angle and range foil thickness were determined by reaction yields and the need to separate the yield peaks of interest from competing (α,p) reactions and backscattered alphas. They have determined that 6.0 MeV incident alphas with a detector angle of 135degree and about 100 micrometers of Mylar range foil are optimum for the system. The yield for the 10 B(α,p 0 ) 13 C reaction is quite constant in the energy range of interest (approximately 5.8 to 6 MeV) but the yield for the 31 P(α,p 0 ) 34 S is not. Consequently, a simple conversion from standard BPSG reference samples (independently quantified by ICP mass spectrometry) is adequate to calculate a film's %B content. The %P calculation is more complex, involving a three-dimensional fit of the P yield data and measured film thickness to the film %P content. This fit is based upon yield data from a matrix of standard film samples. The technique is sensitive to 0.1% with an accuracy of ±3 to ±10% depending on the sample. This measurement method is used routinely at Sandia National Laboratories in support of their fabrication process lines

Interaction between viologen-phosphorus dendrimers and {alpha}-synuclein

Energy Technology Data Exchange (ETDEWEB)

Milowska, Katarzyna, E-mail: milowska@biol.uni.lodz.pl [Department of General Biophysics, Faculty of Biology and Environmental Protection, University of Lodz, Pomorska 141/143, 90-236 Lodz (Poland); Grochowina, Justyna [Department of General Biophysics, Faculty of Biology and Environmental Protection, University of Lodz, Pomorska 141/143, 90-236 Lodz (Poland); Katir, Nadia [Laboratoire de Chimie de Coordination CNRS, 205 route de Narbonne, 31077 Toulouse (France); El Kadib, Abdelkrim [Institute of Nanomaterials and Nanotechnology (INANOTECH)-MAScIR (Moroccan Foundation for Advanced Science, Innovation and Research), ENSET, Avenue de I' Armee Royale, Madinat El Irfane, 10100 Rabat (Morocco); Majoral, Jean-Pierre [Laboratoire de Chimie de Coordination CNRS, 205 route de Narbonne, 31077 Toulouse (France); Bryszewska, Maria; Gabryelak, Teresa [Department of General Biophysics, Faculty of Biology and Environmental Protection, University of Lodz, Pomorska 141/143, 90-236 Lodz (Poland)

2013-02-15

In this study the interaction between viologen-phosphorus dendrimers and {alpha}-synuclein (ASN) was examined. Polycationic viologen-phosphorus dendrimers (two positive charges per viologen unit) are novel compounds with relatively unknown properties. The influence of these viologen dendrimers on ASN was tested using fluorimetric and circular dichroism methods. ASN contains four tyrosine residues; therefore, the influence of dendrimers on protein molecular conformation by measuring the changes in the ASN fluorescence in the presence of dendrimers was evaluated. The interaction of dendrimers with free L-tyrosine was also monitored. Results show that viologen-phosphorus dendrimers interact with ASN; they quenched the fluorescence of ASN as well as free tyrosine by dynamic and static ways. However, the quenching was not accompanied by modifications in the ASN secondary structure. - Highlights: Black-Right-Pointing-Pointer Interaction between viologen-phosphorus dendrimers and {alpha}-synuclein (ASN) was investigated. Black-Right-Pointing-Pointer Viologen-phosphorus dendrimers can quench the fluorescence of tyrosine in ASN. Black-Right-Pointing-Pointer Dendrimers caused red-shift in maximum of fluorescence. Black-Right-Pointing-Pointer Viologen-phosphorus dendrimers did not change the secondary structure of ASN.

Radiochemical analysis of phosphorus in milk samples

International Nuclear Information System (INIS)

Oliveira, R.M. de; Cunha, I.I.L.

1991-01-01

The determination of phosphorus in milk samples by thermal neutron activation analysis employing radiochemical separation is described. The radiochemical separation consists of the simultaneous irradiation of samples and standards, dissolution of the milk samples in a perchloric acid and nitric acid mixture, addition of zinc hold-back carrier, precipitation of phosphorus as ammonium phospho molybdate (A.M.P.) and sample counting in a Geiger-Mueller detector. The analysis sources of error were studied and the established method was applied to phosphorus analyses in commercial milk samples. (author)

The reaction p12C→ηX from Tp=800 MeV to Tp=1500 MeV

International Nuclear Information System (INIS)

Chiavassa, E.; Dellacasa, G.; De Marco, N.; De Oliveira Martins, O.; Gallio, M.; Guaita, P.; Musso, A.; Piccotti, A.; Scomparin, E.; Vercellin, E.

1998-01-01

The reaction p 12 C→nX has been studied, at several proton kinetic energies ranging from 800 MeV to 1500 MeV, at the proton synchrotron Saturne at Saclay. The measured doubly differential cross-sections are presented and discussed in the framework of a simple theoretical model. The model fails in describing the deepest subthreshold data while the above-threshold data are fairly well reproduced. (orig.)

Surface Morphologies of Ti and Ti-Al-V Bombarded by 1.0-MeV Au+ Ions

Science.gov (United States)

Garcia, M. A.; Rickards, J.; Cuerno, R.; Trejo-Luna, R.; Cañetas-Ortega, J.; de la Vega, L. R.; Rodríguez-Fernández, L.

2017-12-01

Ion implantation is known to enhance the mechanical properties of biomaterials such as, e.g., the wear resistance of orthopedic joints. Increasing the surface area of implants may likewise improve their integration with, e.g., bone tissue, which requires surface features with sizes in the micron range. Ion implantation of biocompatible metals has recently been demonstrated to induce surface ripples with wavelengths of a few microns. However, the physical mechanisms controlling the formation and characteristics of these patterns are yet to be understood. We bombard Ti and Ti-6Al-4V surfaces with 1.0-MeV Au+ ions. Analysis by scanning electron and atomic force microscopies shows the formation of surface ripples with typical dimensions in the micron range, with potential indeed for biomedical applications. Under the present specific experimental conditions, the ripple properties are seen to strongly depend on the fluence of the implanted ions while being weakly dependent on the target material. Moreover, by examining experiments performed for incidence angle values θ =8 ° , 23°, 49°, and 67°, we confirm the existence of a threshold incidence angle for (ripple) pattern formation. Surface indentation is also used to study surface features under additional values of θ , agreeing with our single-angle experiments. All properties of the surface structuring process are very similar to those found in the production of surface nanopatterns under low-energy ion bombardment of semiconductor targets, in which the stopping power is dominated by nuclear contributions, as in our experiments. We consider a continuum model that combines the effects of various physical processes as originally developed in that context, with parameters that we estimate under a binary-collision approximation. Notably, reasonable agreement with our experimental observations is achieved, even under our high-energy conditions. Accordingly, in our system, ripple formation is determined by mass

Review of neutron data: 10 to 40 MeV

Energy Technology Data Exchange (ETDEWEB)

Haight, R.C.

1977-04-01

Neutron data are reviewed for incident neutron energies between 10 and 40 MeV. A census of the data shows that there are many gaps in this range and that the existing data are primarily for neutron energies around 14 MeV. Aside from total cross sections, there are few data between 10 and 13 MeV and between 15 and 40 MeV. Examples are presented to show the quality of selected data for total, elastic, inelastic, activation, and charged-particle and gamma-ray production cross sections. The spectra of emitted particles are also discussed.

Review of neutron data: 10 to 40 MeV

International Nuclear Information System (INIS)

Haight, R.C.

1977-04-01

Neutron data are reviewed for incident neutron energies between 10 and 40 MeV. A census of the data shows that there are many gaps in this range and that the existing data are primarily for neutron energies around 14 MeV. Aside from total cross sections, there are few data between 10 and 13 MeV and between 15 and 40 MeV. Examples are presented to show the quality of selected data for total, elastic, inelastic, activation, and charged-particle and gamma-ray production cross sections. The spectra of emitted particles are also discussed

Average stopping powers and the use of non-analyte spiking for the determination of phosphorus and sodium by PIPPS

International Nuclear Information System (INIS)

Olivier, C.; Morland, H.J.

1991-01-01

By using particle induced prompt photon spectrometry, PIPPS, the ratios of the average stopping powers in samples and standards can be used to determine elemental compositions. Since the average stopping powers in the samples are in general unknown, this procedure poses a problem. It has been shown that by spiking the sample with a known amount of a compound with known stopping power and containing a non-analyte element, appropriate stopping powers in the samples can be determined by measuring the prompt gamma-ray yields induced in the spike. Using 5-MeV protons and lithium compounds as non-analyte spikes, sodium and phosphorus were determined in ivory, while sodium was determined in geological samples. For the stopping power determinations in the samples the 429-keV 7 Li n(1,0) and 478-keV 7 Li (1,0) gamma rays were measured, while for phosphorus and sodium determinations the high yield 1,266-keV 31 P (1,0), 440-keV 23 Na (1,0), 1,634-keV, Na 23 α(1,0) and 1,637-keV 23 Na (2,1) gamma rays were used. The method was tested by analyzing the standard reference materials SRM 91, 120c and 694

A new model of anomalous phosphorus diffusion in silicon

International Nuclear Information System (INIS)

Budil, M.; Poetzl, H.; Stingeder, G.; Grasserbauer, M.

1989-01-01

A model is presented to describe the 'kink and tail' diffusion of phosphorus. The diffusion behaviour of phosphorus is expplained by the motion of phosphorus-interstitial and phosphorus-vacancy pairs in different charge states. The model yields the enhancement of diffusion in the tail region depending on surface concentration. Furthermore it yields the same selfdiffusion coefficient for interstitials as the gold diffusion experiments. A transformation of the diffusion equation was found to reduce the number of simulation equations. (author) 7 refs., 5 figs

Digestible phosphorus levels for barrows from 50 to 80 kg

Directory of Open Access Journals (Sweden)

Viviane Maria Oliveira dos Santos Nieto

2016-05-01

Full Text Available ABSTRACT This study was carried out to evaluate the levels of digestible phosphorus in diets for barrows with a high potential for lean meat deposition from 50 to 80 kg. Eighty barrows, with an initial weight of 47.93±3.43 kg, were distributed in completely randomized blocks, with each group given five levels of digestible phosphorus (1.86, 2.23, 2.61, 2.99, and 3.36 g kg−1. There were eight replicates, and two animals per experimental unit. Phosphorus levels did not significantly influence feed intake, weight gain, or feed conversion ratio. Daily digestible phosphorus intake increased linearly as levels of phosphorus in the diet were increased. Phosphorus levels did not significantly influence muscle depth, loin eye area, backfat thickness, or the percentage and quantity of lean meat in the carcass. A linear increase was observed for feeding cost as the levels of digestible phosphorus in the diet were increased, and the level of 1.86 g kg−1 cost 29.4% less when compared with the level of 2.61 g kg−1. The dry matter, natural matter, the coefficient of the residue, and volatile solids of the waste were not significantly influenced by phosphorus levels. Conversely, it was possible to observe an increasing linear effect for total solids, total phosphorus, and total nitrogen in the waste of animals receiving diets with increased levels of digestible phosphorus. The level of 1.86 g kg−1, which corresponded to a daily intake of 4.77 g−1 of digestible phosphorus, meets the requirements of barrows weighing 50 to 80 kg.

In situ MeV ion beam analysis of ceramic surfaces modified by 100-400 keV ion irradiation

International Nuclear Information System (INIS)

Weber, W.J.; Yu, N.; Sickafus, K.E.

1995-05-01

This paper describes use of the in situ ion beam analysis facility developed at Los Alamos National Laboratory for the study of irradiation effects in ceramic materials. In this facility, an analytical beamline of 3 MV tandem accelerator and an irradiation bean-dine of 200 kV ion implanter are connected at 60 degrees to a common target chamber. This facility provides a fast, efficient, and quantitative measurement tool to monitor changes of composition and crystallinity of materials irradiated by 100-400 keV ions, through sequential measurement of backscattering events of MeV ions combined with ion channeling techniques. We will describe the details of the in situ ion beam analysis and ion irradiation and discuss some of the important issues and their solutions associated with the in situ experiment. These issues include (1) the selection of axial ion channeling direction for the measurement of radiation damage; (2) surface charging and charge collection for data acquisition; (3) surface sputtering during ion irradiation; (4) the effects of MeV analytical beam on the materials; and (5) the sample heating effect on ion beam analysis

Chromatography of phosphorus oxoacids

International Nuclear Information System (INIS)

Ohashi, S.

1975-01-01

The present state of studies on the chromatographic separation of phosphorus oxoacids is surveyed. In this paper, chromatographic techniques are divided into four groups, i.e. paper and thin-layer chromatography, paper electrophoresis, ion-exchange chromatography, and gel chromatography. The separation mechanisms and characteristics for these chromatographic methods are discussed and some examples for the separation of phosphorus oxoacids are described. As examples of the application of ion-exchange and gel chromatography, studies on the hot atom chemistry of 32 P in solid inorganic phosphates and those on the substitution reactions between diphosphonate (diphosphite) and polyphosphates are reported. (author)

Effect of phosphorus level on nitrogen accumulation and yield in soybean

International Nuclear Information System (INIS)

You Yubo; Wu Dongmei; Gong Zhenping; Ma Chunmei

2012-01-01

In this paper, the 15 N labeling with sand culture was conducted to study effects of phosphorus level on nitrogen accumulation, nodule nitrogen fixation and yield of soybean plants. Results showed that nitrogen accumulation, fixation and yield of soybean plants all presented a single peak curve with improvement of phosphorus nutrition level, with the peak value of phosphorus concentration in nutrient solution of 31 mg/L. When phosphorus concentration of nutrient solution was 11 mg/L, no obvious promotion was found on the ratio of nodule nitrogen fixation when increasing phosphorus concentration again, However, when phosphorus concentration of nutrient solution was 21 mg/L, increasing phosphorus concentration again had no obvious promotion on soybean plant nitrogen accumulation, nodule nitrogen fixation accumulation and yield, indicating that effect of phosphorus nutrition level on nitrogen fixation was lower than that on yield formation level. (authors)

Radiation induced phosphorus segregation in austenitic and ferritic alloys

International Nuclear Information System (INIS)

Brimhall, J.L.; Baer, D.R.; Jones, R.H.

1984-01-01

The radiation induced surface segregation (RIS) of phosphorus in stainless steel attained a maximum at a dose of 0.8 dpa then decreased continually with dose. This decrease in the surface segregation of phosphorus at high dose levels has been attributed to removal of the phosphorus layer by ion sputtering. Phosphorus is not replenished since essentially all of the phosphorus within the irradiation zone has been segregated to the surface. Sputter removal can explain the previously reported absence of phosphorus segregation in ferritic alloys irradiated at high dosessup(1,2) (>1 dpa) since irradiation of ferritic alloys to low doses has shown measurable RIS. This sputtering phenomenon places an inherent limitation to the heavy ion irradiation technique for the study of surface segregation of impurity elements. The magnitude of the segregation in ferritics is still much less than in stainless steel which can be related to the low damage accumulation in these alloys. (orig.)

Bragg-case synchrotron section topography of silicon implanted with high-energy protons and α particles

International Nuclear Information System (INIS)

Wieteska, K.; Wierzchowski, W.; Graeff, W.

1997-01-01

Back reflection section topography using white-beam synchrotron radiation has been applied for the investigation of silicon implanted with 1 and 1.6 MeV protons and 4.8 MeV α particles. The beam width was limited to 5 μm, and a series of spots in the vicinity of a centrally adjusted reflection were indexed and analysed. The back-reflection section pattern of implanted crystals usually exhibits fringes corresponding to the reflection from the surface and a series of fringes corresponding to the rear region of the shot-through layer, the destroyed layer and the bulk. The patterns were used for direct evaluation of ion ranges and thicknesses of the shot-through layer. The overall characteristics of the obtained patterns were successfully reproduced in simulations based on numerical integration of the Takagi-Taupin equations. The agreement between the simulation and experiment proves that the lattice-parameter depth-distribution profiles can be assumed to be proportional to interstitial-vacancy distributions obtained using the Monte Carlo method from the Biersack-Ziegler theory. The simulation also reproduced interference tails observed in some section patterns. It was found that these tails are caused by the ion-dose change along the beam and they were probably formed due to the interference between the radiation reflected from the bulk and those rays reflected by the rear region of the shot-through layer. (orig.)

Measurement and modelling of the radiation damage of silicon by MeV Ag ions

International Nuclear Information System (INIS)

Lindner, J.K.N.; Eder, J.; Stritzker, B.

1999-01-01

Depth profiles of the radiation damage produced by 4 MeV Ag ions in Si(111) at temperatures of 210--450 K are studied by optical reflectivity depth profiling and TEM for doses between 10 12 and 10 15 Ag/cm 2 . For high implantation temperatures, the depth of maximum damage is shown to be dose dependent. Point defect diffusion is shown to result in long tails of defect depth profiles. High-temperature amorphization is observed to proceed via the formation and bridge-like coalescence of isolated amorphous volumina. The damage at the depth of the maximum in the nuclear stopping power is described as a function of dose and temperature by the Hecking model. The model parameters and a comparison with those obtained for lighter ions reflect the particular properties of heavy ion collision cascades

Phosphorus conditions at various depths in some mineral soils

Directory of Open Access Journals (Sweden)

Armi Kaila

1963-05-01

Full Text Available The fractionation method of CHANG and JACKSON (2 was used for the analysing of the distribution of inorganic phosphorus in the topsoil and subsoil of twelve virgin and twelve cultivated soils from various parts of the country; two virgin soils and twenty cultivated soils were studied down to the depths of 60 cm or 70 cm, one even to 2 m. In the more intensively podsolized virgin soils the surface layers, particularly the A2-horizon, are very poor in all the forms of inorganic phosphorus while the enrichment layer will contain fairly high amounts of iron and aluminium bound phosphorus. The application of fertilizers and the other cultivation managements tend to accumulate aluminium and iron bound phosphorus in the plough layer. In some soils the minimum content of calcium bound phosphorus occurs in the layer below the plough layer, but an increase with the depth seems to be typical to it in all the non-Litorina soils, while the first two fractions usually decrease with the depth. In the Litorina soils the iron bound phosphorus is dominant in all the layers studied, but the content of reductant soluble phosphorus is low in these soils, and their content of calcium bound phosphorus is higher than the content of phosphorus bound by aluminium. The predominance of calcium phosphate in the subsoil and the rather low content of reductant soluble and occluded fractions indicate that the chemical weathering in most of our soils is not yet at an advanced stage. The test values determined were in accordance with the results of the fractionation and the estimation of ammonium oxalate soluble aluminium and iron.

IBIC characterisation of novel detectors for single atom doping of quantum computer devices

International Nuclear Information System (INIS)

Yang Changyi; Jamieson, David N.; Pakes, Chris I.; George, Damien P.; Hearne, Sean M.; Dzurak, Andrew S.; Gauja, Eric; Stanley, F.; Clark, R.G.

2003-01-01

Single ion implantation and online detection is highly desirable for the emerging application, in which single 31 P ions need to be inserted in prefabricated silicon cells to construct solid-state quantum bits (qubits). In order to fabricate qubit arrays, we have developed novel detectors that employ detector electrodes adjacent to the prefabricated cells that can detect single keV ion strikes appropriate for the fabrication of shallow phosphorus arrays. The method utilises a high purity silicon substrate with very high resistivity, a thin SiO 2 surface layer, nanometer masks for the lateral positioning single phosphorus implantation, biased electrodes applied to the surface of the silicon and sensitive electronics that can detect the charge transient from single keV ion strikes. A TCAD (Technology Computer Aided Design) software package was applied in the optimisation of the device design and simulation of the detector performance. Here we show the characterisation of these detectors using ion beam induced charge (IBIC) with a focused 2 MeV He ions in a nuclear microprobe. The IBIC imaging method in a nuclear microprobe allowed us to measure the dead-layer thickness of the detector structure (required to be very thin for successful detection of keV ions), and the spatial distribution of the charge collection efficiency around the entire region of the detector. We show that our detectors have near 100% charge collection efficiency for MeV ions, extremely thin dead-layer thickness (about 7 nm) and a wide active region extending laterally from the electrodes (10-20 μm) where qubit arrays can be constructed. We demonstrate that the device can be successfully applied in the detection of keV ionisation energy from single events of keV X-rays and keV 31 P ions

IBIC characterisation of novel detectors for single atom doping of quantum computer devices

Energy Technology Data Exchange (ETDEWEB)

Yang Changyi E-mail: cjy@physics.unimelb.edu.auc.yang@physics.unimelb.edu.au; Jamieson, David N.; Pakes, Chris I.; George, Damien P.; Hearne, Sean M.; Dzurak, Andrew S.; Gauja, Eric; Stanley, F.; Clark, R.G

2003-09-01

Single ion implantation and online detection is highly desirable for the emerging application, in which single {sup 31}P ions need to be inserted in prefabricated silicon cells to construct solid-state quantum bits (qubits). In order to fabricate qubit arrays, we have developed novel detectors that employ detector electrodes adjacent to the prefabricated cells that can detect single keV ion strikes appropriate for the fabrication of shallow phosphorus arrays. The method utilises a high purity silicon substrate with very high resistivity, a thin SiO{sub 2} surface layer, nanometer masks for the lateral positioning single phosphorus implantation, biased electrodes applied to the surface of the silicon and sensitive electronics that can detect the charge transient from single keV ion strikes. A TCAD (Technology Computer Aided Design) software package was applied in the optimisation of the device design and simulation of the detector performance. Here we show the characterisation of these detectors using ion beam induced charge (IBIC) with a focused 2 MeV He ions in a nuclear microprobe. The IBIC imaging method in a nuclear microprobe allowed us to measure the dead-layer thickness of the detector structure (required to be very thin for successful detection of keV ions), and the spatial distribution of the charge collection efficiency around the entire region of the detector. We show that our detectors have near 100% charge collection efficiency for MeV ions, extremely thin dead-layer thickness (about 7 nm) and a wide active region extending laterally from the electrodes (10-20 {mu}m) where qubit arrays can be constructed. We demonstrate that the device can be successfully applied in the detection of keV ionisation energy from single events of keV X-rays and keV {sup 31}P ions.

The JHP 200-MeV proton linear accelerator

Energy Technology Data Exchange (ETDEWEB)

Kato, Takao [National Lab. for High Energy Physics, Tsukuba, Ibaraki (Japan)

1997-11-01

A 200-MeV proton linear accelerator for the Japanese Hadron Project (JHP) has been designed. It consists of a 3-MeV radio-frequency quadrupole linac (RFQ), a 50-MeV drift tube linac (DTL) and a 200-MeV separated-type drift tube linac (SDTL). A frequency of 324 MHz has been chosen for all of the rf structures. A peak current of 30 mA (H{sup -} ions) of 400 {mu}sec pulse duration will be accelerated at a repetition rate of 25 Hz. A future upgrade plan up to 400 MeV is also presented, in which annular-coupled structures (ACS) of 972 MHz are used in an energy range of above 150 or 200 MeV. One of the design features is its high performance for a beam-loss problem during acceleration. It can be achieved by separating the transition point in the transverse motion from that of the longitudinal motion. The transverse transition at a rather low-energy range decreases the effects of space-charge, while the longitudinal transition at a rather high-energy range decreases the effects of nonlinear problems related to acceleration in the ACS. Coupled envelope equations and equipartitioning theory are used for the focusing design. The adoption of the SDTL structure improves both the effective shunt impedance and difficulties in fabricating drift tubes with focusing magnets. An accurate beam-simulation code on a parallel supercomputer was used for confirming any beam-loss problem during acceleration. (author)

Iron oxides, divalent cations, silica, and the early earth phosphorus crisis

DEFF Research Database (Denmark)

Jones, C.; Nomosatryo, S.; Crowe, S.A.

2015-01-01

As a nutrient required for growth, phosphorus regulates the activity of life in the oceans. Iron oxides sorb phosphorus from seawater, and through the Archean and early Proterozoic Eons, massive quantities of iron oxides precipitated from the oceans, producing a record of seawater chemistry...... that is preserved as banded iron formations (BIFs) today. Here we show that Ca2+, Mg2+, and silica in seawater control phosphorus sorption onto iron oxides, influencing the record of seawater phosphorus preserved in BIFs. Using a model for seawater cation chemistry through time, combined with the phosphorus...... waters shifted from phosphorus to iron limiting....

Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes

International Nuclear Information System (INIS)

Hadj Alouane, M. H.; Ilahi, B.; Maaref, H.; Salem, B.; Aimez, V.; Morris, D.; Turala, A.; Regreny, P.; Gendry, M.

2010-01-01

We report on the effects of the As/P intermixing induced by phosphorus ion implantation in InAs/InP quantum dashes (QDas) on their photoluminescence (PL) properties. For nonintermixed QDas, usual temperature-dependent PL properties characterized by a monotonic redshift in the emission band and a continual broadening of the PL linewidth as the temperature increases, are observed. For intermediate ion implantation doses, the inhomogeneous intermixing enhances the QDas size dispersion and the enlarged distribution of carrier confining potential depths strongly affects the temperature-dependent PL properties below 180 K. An important redshift in the PL emission band occurs between 10 and 180 K which is explained by a redistribution of carriers among the different intermixed QDas of the ensemble. For higher implantation doses, the homogeneous intermixing reduces the broadening of the localized QDas state distribution and the measured linewidth temperature behavior matches that of the nonintermixed QDas. An anomalous temperature-dependent emission energy behavior has been observed for extremely high implantation doses, which is interpreted by a possible QDas dissolution.

Evaluation of added phosphorus in six volcanic ash soils

International Nuclear Information System (INIS)

Pino N, I.; Casas G, L.; Urbinsa P, M.C.

1984-01-01

The behaviour of added phosphorus in six volcanic ash soils (Andepts) was studied. Two phosphate retention solution were used; one of them labeled with 32 P carrier free. The phosphate retention solution (25 ml) was added to 5 gr of air dry soil. The remainder phosphorus in solution was measured through colorimetry and liquid scintillation. Over 85% phosphorus retention was measured in five soils. A phosphate retention solution labeled with 32 P carrier free proved to be efficient for the determination of phosphorus retention rates in the volcanic ash soils studied. (Author)

Fission cross section measurements at the LLL 100-MeV linac

International Nuclear Information System (INIS)

Browne, J.C.

1975-01-01

The fission cross section for 235 U was measured from thermal energy to 20 MeV in several steps. First, the cross section was measured from 8 MeV to 20 MeV relative to the n,p scattering cross section and then from thermal to one MeV relative to 6 Li(n,α). In addition, a measurement of the ratio of the fission cross sections of 235 U and 238 U relative to 235 U has been completed in the range 1 keV to 30 MeV for 233 U and 100 keV to 30 MeV for 238 U. Statistical uncertainties are less than 4 percent. (U.S.)

Examination of the ion-implantation route to fabrication of the Kane quantum computer using advanced imaging techniques

International Nuclear Information System (INIS)

Pakes, C.; Millar, V.; Peng, J.; Cimmino, A.; Prawer, S.; Jamieson, D.; Yang, C.; McKinnon, R.; Stanley, F.; Clark, R.; University of New South Wales, NSW; Dzurak, A.

2002-01-01

Full text: The Kane solid-state quantum computer employs as qubits an array of 31 P atoms embedded with nanoscale precision in a silicon matrix. One proposal for the fabrication of such an array is by phosphorous-ion implantation. We present an overview of a program of research aiming to develop advanced imaging techniques to address key issues relating to the fabrication of the Kane device by ion implantation, focusing particularly on the development of surface-resist technology to allow the registration of single implanted ions and an examination of the extent of damage imposed on the silicon matrix. Our surface resists take the form of a polymethylmethacrylate (PMMA) thin-films, which have been exposed both to MeV and keV ions. Registration of ion implantation is based on the development of localised chemical modification arising from latent damage caused within the PMMA layer by the passage of an implanted ion. On development of the resist, atomic force microscopy imaging demonstrates the formation of clearly defined etched holes, of typical diameter 30 nm, which are ascribed to single-ion impacts. The use of novel scanning probes, such as carbon nanotubes, for imaging complex PMMA resist structures will be illustrated. Potential applications to the fabrication of self-aligned gate structures will be discussed

Total phosphorus recovery in flowback fluids after gelled hydrocarbon fracturing fluid treatments

Energy Technology Data Exchange (ETDEWEB)

Fyten, G.; Houle, P.; Taylor, R.S. [Halliburton Energy Services, Calgary, AB (Canada); Stemler, P.S. [Petro-Canada Oil and Gas Inc., Calgary, AB (Canada); Lemieux, A. [Omnicon Consultants Inc., Calgary, AB (Canada)

2006-07-01

Carbon dioxide miscible hydrocarbon fracturing fluids are used in unconventional gas reservoirs such as tight gas, shale gas, and coalbed methane. These fracturing fluids address phase trapping concerns by using oil-based fracturing fluid technology for use in reservoirs that are water sensitive. This paper addressed the problem of refinery tower fouling caused by volatile phosphorous components found in phosphate ester oil gellants. In order to address costly unplanned refinery shutdowns, a maximum 0.5 ppm volatile phosphorus in crude specification has been proposed. However, this specification is based on average concentrations of phosphorus added to the oil to gel it. The specification also falsely assumes that the oil is phosphorus free to begin with. The authors noted that refinery tower fouling is actually the result of total phosphorus throughput rather than peak concentrations at any one point. This paper focused on the total phosphorus recovery in addition to peak concentrations. It also examined what percentage of the total recovered phosphorus is in fact volatile, since this is the material that plugs the trays. The total per cent recovery of phosphorus originally added as phosphorus based gellant was examined along with the total percent recovery of volatile phosphorus as a function of total phosphorus. The phosphorus concentrations in both new and reused fracturing fluids before addition of gellants was also examined along with the potential explanations for phosphorus concentrations higher than those originally added. It was shown that the first 50 per cent of a hydraulic fracturing fluid flowback can result in recovery of greater than or less than the amount of phosphorus added to that portion of the fracturing fluid. The initial high concentrations of total and volatile phosphorus are greater than the phosphorus concentrations inherent in the system. Therefore, as flowback continues, there would be a rapid decline in the concentration of phosphorus

Isotopically exchangeable phosphorus

International Nuclear Information System (INIS)

Barbaro, N.O.

1984-01-01

A critique revision of isotope dilution is presented. The concepts and use of exchangeable phosphorus, the phosphate adsorption, the kinetics of isotopic exchange and the equilibrium time in soils are discussed. (M.A.C.) [pt

Photospallation reactions of 133Cs and 139La by 100 MeV- and 200 MeV bremsstrahlungs

International Nuclear Information System (INIS)

Sakamoto, K.; Toramoto, H.; Hamajima, Y.; Okada, K.; Dohniwa, M.

1984-01-01

Spallation yields relative to the 196 Au yield from 197 Au(γ,n) of 26 to 46 nuclides of Sb, Te, I, Xe, Cs and/or Ba and La from 133 Cs and 139 La targets irradiated with bremsstrahlungs of end energies of 100 MeV and 200 MeV were radiochemically determined. The isomeric yield ratios for 132 La and 131 Ba from the ( 139 La + 100 MeV-γ), 132 La, 131 Ba, 121 Te and 119 Te from the ( 139 La + 200 MeV-γ, and 120 I, 121 Te and 119 Te from the ( 133 Cs +- 200 MeV-γ) were also determined. The isotopic yields from the (γ,yn) reactions decrease exponentially with increase of y up to 5, and show no dependence on energy and targets studied, indicating that the reactions of a few neutron emissions occur at energies lower than 100 MeV. When the product yields from the (γ,xpyn) reactions were plotted against (x + y) for each x (isotopic distribution), a regular variation of the Gaussian distributions, typical of nuclear spallation, was observed. Isobaric mass distributions and charge dispersions were deduced to extract characteristic features of these reactions. The isobaric distributions due only to photons of 100 MeV to 200 MeV, which were obtained by subtracting the 100 MeV-yields from the 200 MeV-yields, are very close to a symmetric one peaking at about 8 amu from the target masses. Nuclear charges are also dispersed symmetrically, with most probable N/Zsub(p) of about 1.3 replaced by about 1 amu to the neutron-deficient side from the beta stability valley in all the cases studied. Parameters included in Rudstam's semi-empirical formula were examined by comparing with the observed yield curves. The P values of 0.45 and 0.65, chosen for a better fit to the 200 MeV data on 133 Cs and 139 La, respectively, were larger than the predictions reported in the literature. The magic number effects of 139 La may explain the target-differences in mass distributions. (orig.)

Short Implants: New Horizon in Implant Dentistry.

Science.gov (United States)

Jain, Neha; Gulati, Manisha; Garg, Meenu; Pathak, Chetan

2016-09-01

The choice of implant length is an essential factor in deciding the survival rates of these implants and the overall success of the prosthesis. Placing an implant in the posterior part of the maxilla and mandible has always been very critical due to poor bone quality and quantity. Long implants can be placed in association with complex surgical procedures such as sinus lift and bone augmentation. These techniques are associated with higher cost, increased treatment time and greater morbidity. Hence, there is need for a less invasive treatment option in areas of poor bone quantity and quality. Data related to survival rates of short implants, their design and prosthetic considerations has been compiled and structured in this manuscript with emphasis on the indications, advantages of short implants and critical biomechanical factors to be taken into consideration when choosing to place them. Studies have shown that comparable success rates can be achieved with short implants as those with long implants by decreasing the lateral forces to the prosthesis, eliminating cantilevers, increasing implant surface area and improving implant to abutment connection. Short implants can be considered as an effective treatment alternative in resorbed ridges. Short implants can be considered as a viable treatment option in atrophic ridge cases in order to avoid complex surgical procedures required to place long implants. With improvement in the implant surface geometry and surface texture, there is an increase in the bone implant contact area which provides a good primary stability during osseo-integration.

Studies on phosphorus utilization as influenced by bacterial seed inoculation and phosphorus fertilization in summer mung (Vigna radiata L. Wilczek)

International Nuclear Information System (INIS)

Kothari, S.K.; Saraf, C.S.

1988-01-01

A greenhouse experiment was conducted with four types of bacterial inoculation (Rhizobium alone; Rhizobium along with Azotobacter chroococcum; Rhizobium along with Azospirillum brasilense and no inoculation) and three levels of phosphorus ( 32 P labelled SSP) application (O, 6.5 ppm and 13.0 ppm P). Inoculation with Rhizobium along with Azotobacter chroococcum was found to be better than Rhizobium alone or Rhizobium along with Azospirillum brasilense in respect of leaf, stem, root and nodule dry weight, phosphorus uptake and utilization efficiency. P application upto 6.5 ppm significantly increased leaf, stem, root and nodule dry weight and phosphorus uptake. Per cent phosphorus derived from fertilizer (per cent pdff) and fertilizer P uptake significantly increased while P utilization efficiency significantly decreased with increasing levels of P application. (author). 12 refs., 2 tables

Influence of Palatal Coverage and Implant Distribution on Implant Strain in Maxillary Implant Overdentures.

Science.gov (United States)

Takahashi, Toshihito; Gonda, Tomoya; Mizuno, Yoko; Fujinami, Yozo; Maeda, Yoshinobu

2016-01-01

Maxillary implant overdentures are often used in clinical practice. However, there is no agreement or established guidelines regarding prosthetic design or optimal implant placement configuration. The purpose of this study was to examine the influence of palatal coverage and implant number and distribution in relation to impact strain under maxillary implant overdentures. A maxillary edentulous model with implants and experimental overdentures with and without palatal coverage was fabricated. Four strain gauges were attached to each implant, and they were positioned in the anterior, premolar, and molar areas. A vertical occlusal load of 98 N was applied through a mandibular complete denture, and the implant strains were compared using one-way analysis of variance (P = .05). The palatolabial strain was much higher on anterior implants than on other implants in both denture types. Although there was no significant difference between the strain under dentures with and without palatal coverage, palateless dentures tended to result in higher implant strain than dentures with palatal coverage. Dentures supported by only two implants registered higher strain than those supported by four or six implants. Implants under palateless dentures registered higher strain than those under dentures with palatal coverage. Anterior implants exhibited higher palatolabial strain than other implants regardless of palatal coverage and implant configuration; it is therefore recommended that maxillary implant overdentures should be supported by six implants with support extending to the distal end of the arch.

Improving phosphorus availability in an acid soil using organic amendments produced from agroindustrial wastes.

Science.gov (United States)

Ch'ng, Huck Ywih; Ahmed, Osumanu Haruna; Majid, Nik Muhamad Ab

2014-01-01

In acid soils, soluble inorganic phosphorus is fixed by aluminium and iron. To overcome this problem, acid soils are limed to fix aluminium and iron but this practice is not economical. The practice is also not environmentally friendly. This study was conducted to improve phosphorus availability using organic amendments (biochar and compost produced from chicken litter and pineapple leaves, resp.) to fix aluminium and iron instead of phosphorus. Amending soil with biochar or compost or a mixture of biochar and compost increased total phosphorus, available phosphorus, inorganic phosphorus fractions (soluble inorganic phosphorus, aluminium bound inorganic phosphorus, iron bound inorganic phosphorus, redundant soluble inorganic phosphorus, and calcium bound phosphorus), and organic phosphorus. This was possible because the organic amendments increased soil pH and reduced exchangeable acidity, exchangeable aluminium, and exchangeable iron. The findings suggest that the organic amendments altered soil chemical properties in a way that enhanced the availability of phosphorus in this study. The amendments effectively fixed aluminium and iron instead of phosphorus, thus rendering phosphorus available by keeping the inorganic phosphorus in a bioavailable labile phosphorus pool for a longer period compared with application of Triple Superphosphate without organic amendments.

Improving Phosphorus Availability in an Acid Soil Using Organic Amendments Produced from Agroindustrial Wastes

Directory of Open Access Journals (Sweden)

Huck Ywih Ch’ng

2014-01-01

Full Text Available In acid soils, soluble inorganic phosphorus is fixed by aluminium and iron. To overcome this problem, acid soils are limed to fix aluminium and iron but this practice is not economical. The practice is also not environmentally friendly. This study was conducted to improve phosphorus availability using organic amendments (biochar and compost produced from chicken litter and pineapple leaves, resp. to fix aluminium and iron instead of phosphorus. Amending soil with biochar or compost or a mixture of biochar and compost increased total phosphorus, available phosphorus, inorganic phosphorus fractions (soluble inorganic phosphorus, aluminium bound inorganic phosphorus, iron bound inorganic phosphorus, redundant soluble inorganic phosphorus, and calcium bound phosphorus, and organic phosphorus. This was possible because the organic amendments increased soil pH and reduced exchangeable acidity, exchangeable aluminium, and exchangeable iron. The findings suggest that the organic amendments altered soil chemical properties in a way that enhanced the availability of phosphorus in this study. The amendments effectively fixed aluminium and iron instead of phosphorus, thus rendering phosphorus available by keeping the inorganic phosphorus in a bioavailable labile phosphorus pool for a longer period compared with application of Triple Superphosphate without organic amendments.

Occurrence of phosphorus in groundwater and surface water of northwestern Mississippi

Science.gov (United States)

Welch, Heather L.; Kingsbury, James A.; Coupe, Richard H.

2010-01-01

Previous localized studies of groundwater samples from the Mississippi River Valley alluvial (MRVA) aquifer have demonstrated that dissolved phosphorus concentrations in the aquifer are much higher than the national background concentration of 0.03 milligram per liter (mg/L) found in 400 shallow wells across the country. Forty-six wells screened in the MRVA aquifer in northwestern Mississippi were sampled from June to October 2010 to characterize the occurrence of phosphorus in the aquifer, as well as the factors that might contribute to high dissolved phosphorus concentrations in groundwater. Dissolved phosphorus concentrations ranged from 0.12 to 1.2 mg/L with a median concentration of 0.62 mg/L. The predominant subunit of the MRVA aquifer in northwestern Mississippi is the Holocene alluvium in which median dissolved phosphorus concentrations were higher than the Pleistocene valley trains deposits subunit. Highest phosphorus concentrations occurred in water from wells located along the Mississippi River. A general association between elevated phosphorus concentrations and dissolved iron concentrations suggests that reducing conditions that mobilize iron in the MRVA aquifer also might facilitate transport of phosphorus. Using baseflow separation to estimate the contribution of baseflow to total streamflow, the estimated contribution to the total phosphorus load associated with baseflow at the Tensas River at Tendal, LA, and at the Bogue Phalia near Leland, MS, was 23 percent and 8 percent, respectively. This analysis indicates that elevated concentrations of dissolved phosphorus in the MRVA aquifer could be a possible source of phosphorus to streams during baseflow conditions. However, the fate of phosphorus in groundwater discharge and irrigation return flow to streams is not well understood.

The Spatial-temperal Distribution of Phosphorus Species and the Main Factors Influencing on Phosphorus Transportation in Middle Reaches of the Yarlung Zangbo River, China

Science.gov (United States)

Pu, X.; An, R.; Li, R.; Huang, W.; Li, J.

2017-12-01

The objectives of the current study are to investigate the spatial, temperal variation of phisphorus (P) fraction in middle reaches of the Yarlung Zangbo River of China. Samples were collected in April (dry season), August (wet season), and Octber (normal season) along with the middle reaches from Lazi site to Nuxia sitewhich which is about 1000km long. Sequential extraction were applied to determine the forms of phosphorus in suspended particles and to assess the potential bioavailability of particulate P. The results indicated that the distribution of suspended particle size inflenced not only the total phosphorus concentration, but also the proportions of different forms of phosphorus. The exchangeable phosphorus (Ex-P), Fe-bound-P, Ca-bound-P were the most aboundant forms and the highest proportions of total P. The total P concentrations were closely relative to the concentration of suspended particles. According to the characteristics of suspended particles in the Yarlung Zangbo River, the relationship between the suspended particles size and species of phosphorus was established though statistical analysis. The Ex-P increased with the decreasing of suspended particulate size. The content of bioavailable particulate phosphorus varied greatly with the proportions of particulate size. In genral, the higher the proportion of smaller particle size, the higher the content of bioavailable phosphorus. The main factors which affect the phosphorus transportation in Yarlung Zangbo River had also been discussed.

Phytoextraction of excess soil phosphorus

International Nuclear Information System (INIS)

Sharma, Nilesh C.; Starnes, Daniel L.; Sahi, Shivendra V.

2007-01-01

In the search for a suitable plant to be used in P phytoremediation, several species belonging to legume, vegetable and herb crops were grown in P-enriched soils, and screened for P accumulation potentials. A large variation in P concentrations of different plant species was observed. Some vegetable species such as cucumber (Cucumis sativus) and yellow squash (Cucurbita pepo var. melopepo) were identified as potential P accumulators with >1% (dry weight) P in their shoots. These plants also displayed a satisfactory biomass accumulation while growing on a high concentration of soil P. The elevated activities of phosphomonoesterase and phytase were observed when plants were grown in P-enriched soils, this possibly contributing to high P acquisition in these species. Sunflower plants also demonstrated an increased shoot P accumulation. This study shows that the phytoextraction of phosphorus can be effective using appropriate plant species. - Crop plants such as cucumber, squash and sunflower accumulate phosphorus and thus can be used in the phytoextraction of excess phosphorus from soils

Phytoextraction of excess soil phosphorus

Energy Technology Data Exchange (ETDEWEB)

Sharma, Nilesh C. [Department of Biology, Western Kentucky University, 1906 College Heights Boulevard 11080, Bowling Green, KY 42101-1080 (United States); Starnes, Daniel L. [Department of Biology, Western Kentucky University, 1906 College Heights Boulevard 11080, Bowling Green, KY 42101-1080 (United States); Sahi, Shivendra V. [Department of Biology, Western Kentucky University, 1906 College Heights Boulevard 11080, Bowling Green, KY 42101-1080 (United States)]. E-mail: shiv.sahi@wku.edu

2007-03-15

In the search for a suitable plant to be used in P phytoremediation, several species belonging to legume, vegetable and herb crops were grown in P-enriched soils, and screened for P accumulation potentials. A large variation in P concentrations of different plant species was observed. Some vegetable species such as cucumber (Cucumis sativus) and yellow squash (Cucurbita pepo var. melopepo) were identified as potential P accumulators with >1% (dry weight) P in their shoots. These plants also displayed a satisfactory biomass accumulation while growing on a high concentration of soil P. The elevated activities of phosphomonoesterase and phytase were observed when plants were grown in P-enriched soils, this possibly contributing to high P acquisition in these species. Sunflower plants also demonstrated an increased shoot P accumulation. This study shows that the phytoextraction of phosphorus can be effective using appropriate plant species. - Crop plants such as cucumber, squash and sunflower accumulate phosphorus and thus can be used in the phytoextraction of excess phosphorus from soils.

Do invasive mussels restrict offshore phosphorus transport in Lake Huron?

Science.gov (United States)

Cha, Yoonkyung; Stow, Craig A; Nalepa, Thomas F; Reckhow, Kenneth H

2011-09-01

Dreissenid mussels were first documented in the Laurentian Great Lakes in the late 1980s. Zebra mussels (Dreissena polymorpha) spread quickly into shallow, hard-substrate areas; quagga mussels (Dreissena rostriformis bugensis) spread more slowly and are currently colonizing deep, offshore areas. These mussels occur at high densities, filter large water volumes while feeding on suspended materials, and deposit particulate waste on the lake bottom. This filtering activity has been hypothesized to sequester tributary phosphorus in nearshore regions reducing offshore primary productivity. We used a mass balance model to estimate the phosphorus sedimentation rate in Saginaw Bay, a shallow embayment of Lake Huron, before and after the mussel invasion. Our results indicate that the proportion of tributary phosphorus retained in Saginaw Bay increased from approximately 46-70% when dreissenids appeared, reducing phosphorus export to the main body of Lake Huron. The combined effects of increased phosphorus retention and decreased phosphorus loading have caused an approximate 60% decrease in phosphorus export from Saginaw Bay to Lake Huron. Our results support the hypothesis that the ongoing decline of preyfish and secondary producers including diporeia (Diporeia spp.) in Lake Huron is a bottom-up phenomenon associated with decreased phosphorus availability in the offshore to support primary production.

The Prevalence of Phosphorus Containing Food Additives in Top Selling Foods in Grocery Stores

Science.gov (United States)

León, Janeen B.; Sullivan, Catherine M.; Sehgal, Ashwini R.

2013-01-01

Objective To determine the prevalence of phosphorus-containing food additives in best selling processed grocery products and to compare the phosphorus content of a subset of top selling foods with and without phosphorus additives. Design The labels of 2394 best selling branded grocery products in northeast Ohio were reviewed for phosphorus additives. The top 5 best selling products containing phosphorus additives from each food category were matched with similar products without phosphorus additives and analyzed for phosphorus content. Four days of sample meals consisting of foods with and without phosphorus additives were created and daily phosphorus and pricing differentials were computed. Setting Northeast Ohio Main outcome measures Presence of phosphorus-containing food additives, phosphorus content Results 44% of the best selling grocery items contained phosphorus additives. The additives were particularly common in prepared frozen foods (72%), dry food mixes (70%), packaged meat (65%), bread & baked goods (57%), soup (54%), and yogurt (51%) categories. Phosphorus additive containing foods averaged 67 mg phosphorus/100 gm more than matched non-additive containing foods (p=.03). Sample meals comprised mostly of phosphorus additive-containing foods had 736 mg more phosphorus per day compared to meals consisting of only additive-free foods. Phosphorus additive-free meals cost an average of $2.00 more per day. Conclusion Phosphorus additives are common in best selling processed groceries and contribute significantly to their phosphorus content. Moreover, phosphorus additive foods are less costly than phosphorus additive-free foods. As a result, persons with chronic kidney disease may purchase these popular low-cost groceries and unknowingly increase their intake of highly bioavailable phosphorus. PMID:23402914

The prevalence of phosphorus-containing food additives in top-selling foods in grocery stores.

Science.gov (United States)

León, Janeen B; Sullivan, Catherine M; Sehgal, Ashwini R

2013-07-01

The objective of this study was to determine the prevalence of phosphorus-containing food additives in best-selling processed grocery products and to compare the phosphorus content of a subset of top-selling foods with and without phosphorus additives. The labels of 2394 best-selling branded grocery products in northeast Ohio were reviewed for phosphorus additives. The top 5 best-selling products containing phosphorus additives from each food category were matched with similar products without phosphorus additives and analyzed for phosphorus content. Four days of sample meals consisting of foods with and without phosphorus additives were created, and daily phosphorus and pricing differentials were computed. Presence of phosphorus-containing food additives, phosphorus content. Forty-four percent of the best-selling grocery items contained phosphorus additives. The additives were particularly common in prepared frozen foods (72%), dry food mixes (70%), packaged meat (65%), bread and baked goods (57%), soup (54%), and yogurt (51%) categories. Phosphorus additive-containing foods averaged 67 mg phosphorus/100 g more than matched nonadditive-containing foods (P = .03). Sample meals comprised mostly of phosphorus additive-containing foods had 736 mg more phosphorus per day compared with meals consisting of only additive-free foods. Phosphorus additive-free meals cost an average of $2.00 more per day. Phosphorus additives are common in best-selling processed groceries and contribute significantly to their phosphorus content. Moreover, phosphorus additive foods are less costly than phosphorus additive-free foods. As a result, persons with chronic kidney disease may purchase these popular low-cost groceries and unknowingly increase their intake of highly bioavailable phosphorus. Copyright © 2013 National Kidney Foundation, Inc. Published by Elsevier Inc. All rights reserved.

Phosphorus Processing—Potentials for Higher Efficiency

Directory of Open Access Journals (Sweden)

Ludwig Hermann

2018-05-01

Full Text Available In the aftermath of the adoption of the Sustainable Development Goals (SDGs and the Paris Agreement (COP21 by virtually all United Nations, producing more with less is imperative. In this context, phosphorus processing, despite its high efficiency compared to other steps in the value chain, needs to be revisited by science and industry. During processing, phosphorus is lost to phosphogypsum, disposed of in stacks globally piling up to 3–4 billion tons and growing by about 200 million tons per year, or directly discharged to the sea. Eutrophication, acidification, and long-term pollution are the environmental impacts of both practices. Economic and regulatory framework conditions determine whether the industry continues wasting phosphorus, pursues efficiency improvements or stops operations altogether. While reviewing current industrial practice and potentials for increasing processing efficiency with lower impact, the article addresses potentially conflicting goals of low energy and material use as well as Life Cycle Assessment (LCA as a tool for evaluating the relative impacts of improvement strategies. Finally, options by which corporations could pro-actively and credibly demonstrate phosphorus stewardship as well as options by which policy makers could enforce improvement without impairing business locations are discussed.

The role of phosphorus sources in the growth of lowland rice plant

International Nuclear Information System (INIS)

Sisworo, Widjang Herry

1975-01-01

The role of phosphorus sources in the growth of lowland rice plant was studied using P 32 -labelled superphosphate. The experiment was carried out in the glass house. Three high yielding rice varieties used in the experiment were PB 5, IR 22 and Pelita I/1. Results obtained from the experiment showed that, during early growth, seedlings in the nursery did not require any phosphorus from outside. The phosphorus needed was apparently supplied by the seeds themselves. After 10 days seedlings started using phosphorus from outside the plants. Phosphorus in the plants derived from fertilizer reached 5-12% at 16 days old and 25-40% at transplanting time depending on the varieties. Higher response to phosphorus application in the nursery was given by Pelita I/1, the phosphorus in the plants derived from fertilizer was 40% at transplanting time. The phosphorus requirement was mostly supplied by the application of phosphorus fertilizer till 20 days after transplanting but after 40 days soil-phosphorus became the main source for the plants. (author)

Phosphorus in the feeding of pigs : effect of diet on the absorption and retention of phosphorus by growing pigs

NARCIS (Netherlands)

Jongbloed, A.W.

1987-01-01

An extensive review is given of the literature concerning phosphorus feeding of pigs. Subjects dealt with are: 1. physiological background, regulation and effect of diet composition and nutrient supply on phosphorus absorption and retention; 2. estimation of the amount of P present in the

Remediation of phosphorus from electric furnace waste streams

International Nuclear Information System (INIS)

Hanna, J.; Jung, J.O.

1992-01-01

Electrothermal production of elemental phosphorus (P4) generates substantial amounts of highly toxic phossy water sludge, slag and other gaseous wastes. Because of their high phosphorus content the sludges pose potential fire hazards. In the absence of a reliable processing technology, large amounts of these hazardous wastes are accumulated at an annual rate of 1.5-2.5 million tons from current and past operations. The accumulated sludges are stored in ponds or in special containment vessels in 30 locations in 18 states including Alabama, California, Tennessee, Idaho and Montana. Serious water pollution problems will result unless these wastes are given extensive treatment to remove the elemental phosphorus. Federal regulations prohibit permanent storage of flammable wastes. This paper reports that recently, researchers at the University of Alabama have developed a two-step method for the treatment of phosphorus sludge that includes bulk removal of phosphorus by physical separation techniques followed by remediation of the residual P4 in the sludge using a novel wet air oxidation technique known as HSAD

A Hierarchical Phosphorus Nanobarbed Nanowire Hybrid: Its Structure and Electrochemical Properties.

Science.gov (United States)

Zhao, Dan; Li, Beibei; Zhang, Jinying; Li, Xin; Xiao, Dingbin; Fu, Chengcheng; Zhang, Lihui; Li, Zhihui; Li, Jun; Cao, Daxian; Niu, Chunming

2017-06-14

Nanostructured phosphorus-carbon composites are promising materials for Li-ion and Na-ion battery anodes. A hierarchical phosphorus hybrid, SiC@graphene@P, has been synthesized by the chemical vapor deposition of phosphorus on the surfaces of barbed nanowires, where the barbs are vertically grown graphene nanosheets and the cores are SiC nanowires. A temperature-gradient vaporization-condensation method has been used to remove the unhybridized phosphorus particles formed by homogeneous nucleation. The vertically grown barb shaped graphene nanosheets and a high concentration of edge carbon atoms induced a fibrous red phosphorus (f-RP) growth with its {001} planes in parallel to {002} planes of nanographene sheets and led to a strong interpenetrated interface interaction between phosphorus and the surfaces of graphene nanosheets. This hybridization has been demonstrated to significantly enhance the electrochemical performances of phosphorus.

Optical transmission of silica glass during swift-heavy-ion implantation

International Nuclear Information System (INIS)

Plaksin, Oleg; Okubo, Nariaki; Takeda, Yoshihiko; Amekura, Hiroshi; Kono, Kenichiro; Kishimoto, Naoki

2004-01-01

Metal nanoparticles fabricated by heavy-ion implantation of insulators are promising for non-linear optical applications. Spectra of optical transmission of silica glass in the visible region were measured during and after implantation of 3 MeV Cu 2+ ions. Three absorption bands contribute to the spectra: transient absorption (TA) at 2.34 eV, a surface plasmon resonance (SPR) peak at 2.21 eV and a tail of residual absorption (RA), which increases when the photon energy is increased from 2.2 to 2.6 eV. The TA and a change of the SPR peak strongly contribute to the total transient absorption obtained as the difference in absorption during and after irradiation. The effect of RA shows up as a decrease of absorption after switching on the ion beam. The TA provides a means for selective electronic excitation by a laser during implantation of silica glass. The precipitation of Cu atoms and the growth of Cu nanoparticles are well distinguishable stages of nanoparticle formation. The SPR peak appears at a fluence of 3.3 x 10 16 ions/cm 2 , corresponding to the onset of precipitation. At fluences higher than 3.4 x 10 16 ions/cm 2 , when the growth of nanoparticles predominates, the fluence dependence of the SPR peak is linear

Overview of phosphorus diffusion and gettering in multicrystalline silicon

International Nuclear Information System (INIS)

Bentzen, A.; Holt, A.

2009-01-01

This paper gives an overview of phosphorus emitter diffusion and gettering as experienced in multicrystalline silicon solar cell processing. The paper gives a brief summary of the diffusion properties of phosphorus in silicon, explaining the nature behind the characteristic kink-and-tail profiles often encountered in silicon solar cells. Then, phosphorus diffusion gettering is discussed with particular focus to the inhomogeneous nature of multicrystalline silicon, and it is discussed how the abundant presence of dislocations in the areas of the material having a low recombination lifetime can cause only minor lifetime enhancements in such areas upon phosphorus diffusion. Attributed to dissociation of precipitated impurities in combination with longer effective diffusion lengths of the impurities, it is then seen that even poor areas of multicrystalline can exhibit a noticeable improvement by phosphorus diffusion gettering when applying a lower diffusion temperature for a longer duration.

The Potential Phosphorus Crisis: Resource Conservation and Possible Escape Technologies: A Review

Directory of Open Access Journals (Sweden)

Saba Daneshgar

2018-06-01

Full Text Available Phosphorus is an essential nutrient for every organism on the Earth, yet it is also a potential environmental pollutant, which may cause eutrophication of water bodies. Wastewater treatment plants worldwide are struggling to eliminate phosphorus from effluents, at great cost, yet current research suggests that the world may deplete the more available phosphorus reserves by around 2300. This, in addition to environmental concerns, evokes the need for new phosphorus recovery techniques to be developed, to meet future generations needs for renewable phosphorus supply. Many studies have been, and are, carried out on phosphorus recovery from wastewater and its sludge, due to their high phosphorus content. Chemical precipitation is the main process for achieving a phosphorus-containing mineral suitable for reuse as a fertilizer, such as struvite. This paper reviews the current status and future trends of phosphorus production and consumption, and summarizes current recovery technologies, discussing their possible integration into wastewater treatment processes, according to a more sustainable water-energy-nutrient nexus.

First H- beam accelerated at Linac4: 3MeV done, 157 MeV to go!

CERN Multimedia

Linac4 Project Team

2013-01-01

On 14 November, the first H- (one proton surrounded by two electrons) beam was accelerated to the energy of 3 MeV in the Linac4 - the new linear accelerator that will replace Linac2 as low-energy injector in the LHC accelerator chain.      A view of the Linac4 taken during the recent tests (top image) and the current measured by the instruments at the end of the acceleration line on 14 November (bottom image). Images: Linac4 collaboration. Using the recently installed Radio Frequency Quadrupole (RFQ) accelerator, 13 mA of current were accelerated to the energy of 3 MeV. After the successful commissioning of the Linac4 RFQ at the 3 MeV test stand completed during the first months of 2013, the whole equipment (composed of the RFQ itself, the following Medium Energy Beam Transport line and its diagnostic line) were moved to the Linac4 tunnel during summer and installed in their final position. In the meantime, a new ion source was assembled, installed and successfu...

Structure of inorganic phosphorus-nitrogen tetrahedral compounds

International Nuclear Information System (INIS)

Vitola, A.; Ronis, J.; Avotins, V.; Millers, T.

1997-01-01

The structure analysis of phosphorus-nitrogen compounds has shown the possibility of the P(O,N) 4 tetrahedra to form various kinds of structures. The wide spectrum of the properties determined by the diversity of structures marks the considerable promise to the future application of phosphorus-nitrogen compounds

Phosphorus dendrimers and photodynamic therapy. Spectroscopic studies on two dendrimer-photosensitizer complexes: Cationic phosphorus dendrimer with rose bengal and anionic phosphorus dendrimer with methylene blue.

Science.gov (United States)

Dabrzalska, Monika; Zablocka, Maria; Mignani, Serge; Majoral, Jean Pierre; Klajnert-Maculewicz, Barbara

2015-08-15

Dendrimers due to their unique architecture may play an important role in drug delivery systems including chemotherapy, gene therapy and recently, photodynamic therapy as well. We investigated two dendrimer-photosensitizer systems in context of potential use of these systems in photodynamic therapy. The mixtures of an anionic phosphorus dendrimer of the second generation and methylene blue were studied by UV-vis spectroscopy while that of a cationic phosphorus dendrimer (third generation) and rose bengal were investigated by spectrofluorimetric methods. Spectroscopic analysis of these two systems revealed the formation of dendrimer-photosensitizer complexes via electrostatic interactions as well as π stacking. The stoichiometry of the rose bengal-cationic dendrimer complex was estimated to be 7:1 and 9:1 for the methylene blue-anionic dendrimer complex. The results suggest that these polyanionic or polycationic phosphorus dendrimers can be promising candidates as carriers in photodynamic therapy. Copyright © 2015 Elsevier B.V. All rights reserved.

The Fermilab 400-MeV Linac Upgrade

International Nuclear Information System (INIS)

Schmidt, C.W.

1993-05-01

The Fermilab Linac Upgrade will increase the linac energy from 201 MeV to 401.5 MeV. Seven accelerating modules, composed of 805-MHz side-coupled cells, will accelerate H - beams from 116.5 to 401.5 MeV. The side-coupled structure (SCS) has been built, tuned, tested to full power, and placed in the linac enclosure along side the operating Linac. All seven accelerating modules, each containing four sections of sixteen cells, have been connected to 12-MW power klystrons and tested to full power for a significant period. The transition section to match the beam from the 201.25-MHz drift-tube linac to the SCS, consisting of a sixteen-cell cavity and a vernier four-cell cavity, has also been tested at full power. A new import line from the Linac to the Booster synchrotron with a new Booster injection girder is to be installed. Removal of the last four Alvarez linac tanks (116.5 to 201 MeV) and beam-line installation of the Upgrade components is to begin in early June 1993 and should take about 12 weeks. Beam commissioning of the project will follow and normal operation is expected in a short period. In preparation for beam commissioning, studies are being done with done operating linac to characterize the beam at transition and prepare for phase, amplitude and energy measurements to commission the new linac. The past, present and future activities of the 400-MeV Upgrade will be reviewed

Measures of gamma rays between 0,3 MeV and 3,0 MeV and of the 0,511 MeV annihilation line coming from Galactic Center Region

International Nuclear Information System (INIS)

Jardim, M.V.A.

1982-04-01

The detection of the flux of the electron-positron annihilation line coming from the Galactic Center direction allows one to estimate the rate of positrons production and the corresponding luminosity. The results of measurements of the annihilation line flux intensity at 0.511 MeV, obtained with a balloon borne experiment to measure gamma rays in the energy interval 0.3 to 3 MeV are presented. The detector looked at the galactic disk in the longitude interval -31 0 0 and observed a flux intensity of (6.70 +- 0.85) x 10 -3 photons cm -2 s -1 , which is in good agreement with the flux value estimated assuming that the Galactic Center is a line source emitting uniformly. Some likely sources of positrons and annhilation regions are also discussed. The results for the continuum spectrum emitted from the Galactic Center in the energy interval 0.3 to 0.67 MeV are presented and compared with measurements had already made. (Author) [pt

Direct observation of thermal disorder and decomposition of black phosphorus

Science.gov (United States)

Yoo, Seung Jo; Kim, Heejin; Lee, Ji-Hyun; Kim, Jin-Gyu

2018-02-01