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Sample records for mev phosphorus implanted

  1. ESR studies of high-energy phosphorus-ion implanted synthetic diamond crystals

    Energy Technology Data Exchange (ETDEWEB)

    Isoya, J [University of Library and Information Science, Tsukuba, Ibaraki (Japan); Kanda, H; Morita, Y; Ohshima, T

    1997-03-01

    Phosphorus is among potential n-type dopants in diamond. High pressure synthetic diamond crystals of type IIa implanted with high energy (9-18 MeV) phosphorus ions have been studied by using electron spin resonance (ESR) technique. The intensity and the linewidth of the ESR signal attributed to the dangling bond of the amorphous phase varied with the implantation dose, suggesting the nature of the amorphization varies with the dose. The ESR signals of point defects have been observed in the low dose as-implanted crystals and in the high dose crystals annealed at high temperature and at high pressure. (author)

  2. Rapid thermal annealing of phosphorus implanted silicon

    International Nuclear Information System (INIS)

    Lee, Y.H.; Pogany, A.; Harrison, H.B.; Williams, J.S.

    1985-01-01

    Rapid thermal annealing (RTA) of phosphorus-implanted silicon has been investigated by four point probe, Van der Pauw methods and transmission electron microscopy. The results have been compared to furnace annealing. Experiments show that RTA, even at temperatures as low as 605 deg C, results in good electrical properties with little remnant damage and compares favourably with furnace annealing

  3. Highly Stripped Ion Sources for MeV Ion Implantation

    Energy Technology Data Exchange (ETDEWEB)

    Hershcovitch, Ady

    2009-06-30

    Original technical objectives of CRADA number PVI C-03-09 between BNL and Poole Ventura, Inc. (PVI) were to develop an intense, high charge state, ion source for MeV ion implanters. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MV LINAC is used for acceleration of a few rnA. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform (de acceleration) to generate high-energy ion beams for implantation. This de acceleration of ions will be far more efficient (in energy utilization). The resultant implanter will be smaller in size. It will generate higher quality ion beams (with lower emittance) for fabrication of superior semiconductor products. In addition to energy and cost savings, the implanter will operate at a lower level of health risks associated with ion implantation. An additional aim of the project was to producing a product that can lead to long­ term job creation in Russia and/or in the US. R&D was conducted in two Russian Centers (one in Tomsk and Seversk, the other in Moscow) under the guidance ofPVI personnel and the BNL PI. Multiple approaches were pursued, developed, and tested at various locations with the best candidate for commercialization delivered and tested at on an implanter at the PVI client Axcelis. Technical developments were exciting: record output currents of high charge state phosphorus and antimony were achieved; a Calutron-Bemas ion source with a 70% output of boron ion current (compared to 25% in present state-of-the-art). Record steady state output currents of higher charge state phosphorous and antimony and P ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb {sup 4 +}, Sb{sup 5+}, and Sb{sup 6+} respectively. Ultimate commercialization goals did not succeed (even though a number of the products like high

  4. Neutron activation analysis for calibration of phosphorus implantation dose

    International Nuclear Information System (INIS)

    Paul, Rick L.; Simons, David S.

    2001-01-01

    A feasibility study was undertaken to determine if radiochemical neutron activation analysis (RNAA) can be used to certify the retained dose of phosphorus implanted in silicon, with the goal of producing a phosphorus SRM. Six pieces of silicon, implanted with a nominal phosphorus dose of 8.5x10 14 atoms·cm -2 were irradiated at a neutron flux of 1.05x10 14 cm -2 ·s -1 . The samples were mixed with carrier, dissolved in acid, the phosphorus isolated by chemical separation, and 32 P measured using a beta proportional counter. A mean phosphorus concentration of (8.35±0.20)x10 14 atoms·cm -2 (uncertainty=1 standard deviation) was determined for the six samples, in agreement with the nominal implanted dose

  5. Annealing behaviour of MeV erbium implanted lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Gortmaker, P; McCallum, J C [Royal Melbourne Inst. of Tech., VIC (Australia)

    1994-12-31

    Lithium niobate (LiNbO{sub 3}) is a crystalline ceramic commonly used in the fabrication of optoelectronic devices. Recently, rare earth doping of LiNbO{sub 3} has become a topic of particular interest. The electronic configuration of rare earth elements such as Erbium (Er) and Neodymium (Nd) allows them to lase in nearly any host matrix making fabrication of a whole range of new optoelectronic devices possible. At present, the doping technique, for LiNbO{sub 3} are centred upon diffusion technology, but the diffusion profiles for the rare earths are not generally well-matched to the optical modes of the device. The aim of this research is to develop MeV implantation and annealing conditions of rare earth doped LiNbO{sub 3} that would be compatible with optoelectronic device fabrication. To determine the characteristics of the rare earth elements in the LiNbO{sub 3} host material over the depth range of interest in optoelectronic device applications, high energy Rutherford backscattering spectrometry and ion channeling (RBS-C) must be used. Presented here are the Er depth profile and lattice damage results obtained from 5 MeV RBS-C measurements on samples of LiNbO{sub 3} implanted with various doses of MeV Erbium and subsequently thermally annealed at a temperature of 1000 deg C. It was found that there is a peak implant concentration (2 x 10{sup 16} Er/cm{sup 2}) for which erbium no longer goes substitutional in the lattice, and the implantation damage is not fully removed by annealing. 8 refs., 3 figs.

  6. Annealing behaviour of MeV erbium implanted lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Gortmaker, P.; McCallum, J.C. [Royal Melbourne Inst. of Tech., VIC (Australia)

    1993-12-31

    Lithium niobate (LiNbO{sub 3}) is a crystalline ceramic commonly used in the fabrication of optoelectronic devices. Recently, rare earth doping of LiNbO{sub 3} has become a topic of particular interest. The electronic configuration of rare earth elements such as Erbium (Er) and Neodymium (Nd) allows them to lase in nearly any host matrix making fabrication of a whole range of new optoelectronic devices possible. At present, the doping technique, for LiNbO{sub 3} are centred upon diffusion technology, but the diffusion profiles for the rare earths are not generally well-matched to the optical modes of the device. The aim of this research is to develop MeV implantation and annealing conditions of rare earth doped LiNbO{sub 3} that would be compatible with optoelectronic device fabrication. To determine the characteristics of the rare earth elements in the LiNbO{sub 3} host material over the depth range of interest in optoelectronic device applications, high energy Rutherford backscattering spectrometry and ion channeling (RBS-C) must be used. Presented here are the Er depth profile and lattice damage results obtained from 5 MeV RBS-C measurements on samples of LiNbO{sub 3} implanted with various doses of MeV Erbium and subsequently thermally annealed at a temperature of 1000 deg C. It was found that there is a peak implant concentration (2 x 10{sup 16} Er/cm{sup 2}) for which erbium no longer goes substitutional in the lattice, and the implantation damage is not fully removed by annealing. 8 refs., 3 figs.

  7. Enhanced diffusion of dopants in vacancy supersaturation produced by MeV implantation

    International Nuclear Information System (INIS)

    Venezia, V.C.; Univ. of North Texas, Denton, TX; Haynes, T.E.; Agarwal, A.; Lucent Technologies, Murray Hill, NJ; Gossmann, H.J.; Eaglesham, D.J.

    1997-04-01

    The diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si + , 1 x 10 16 /cm 2 , implant. A 4x larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10x smaller diffusion relative to markers without the MeV Si + implant. This data demonstrates that a 2 MeV Si + implant injects vacancies into the near surface region

  8. Si exfoliation by MeV proton implantation

    International Nuclear Information System (INIS)

    Braley, Carole; Mazen, Frédéric; Tauzin, Aurélie; Rieutord, François; Deguet, Chrystel; Ntsoenzok, Esidor

    2012-01-01

    Proton implantation in silicon and subsequent annealing are widely used in the Smart Cut™ technology to transfer thin layers from a substrate to another. The low implantation energy range involved in this process is usually from a few ten to a few hundred of keV, which enables the separation of up to 2 μm thick layers. New applications in the fields of 3D integration and photovoltaic wafer manufacturing raise the demand for extending this technology to higher energy in order to separate thicker layer from a substrate. In this work, we propose to investigate the effect of proton implantation in single crystalline silicon in the 1–3 MeV range which corresponds to a 15–100 μm range for the hydrogen maximum concentration depth. We show that despites a considerably lower hydrogen concentration at R p , the layer separation is obtained with fluence close to the minimum fluence required for low energy implantation. It appears that the fracture propagation in Si and the resulting surface morphology is affected by the substrate orientation. Defects evolution is investigated with Fourier Transform Infrared Spectroscopy. The two orientations reveal similar type of defects but their evolution under annealing appears to be different.

  9. Focussed MeV ion beam implanted waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Von Bibra, M L; Roberts, A; Nugent, K; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    Single mode buried optical waveguides have been fabricated in fused silica by MeV proton implantation using a focussed hydrogen ion beam. The technique has the potential to direct write waveguide devices and produce multi-layered structures, without the need for intermediate steps such as mask fabrication or layered depositions. A micron resolution Confocal Raman Spectrometer has been used to map the distribution of atomic vacancies that forms the waveguiding region. The results are compared with theoretical calculations. Losses of 3 dB cm{sup -1} have been measured in unannealed samples, which decreases to less than 0.5 dB cm{sup -1} after annealing at 500 degrees Celsius. We describe methods for determining the refractive index distribution of single mode buried waveguides from their output intensity distributions via an inversion of the scalar wave equation. (authors). 5 figs.

  10. Focussed MeV ion beam implanted waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Von Bibra, M.L.; Roberts, A.; Nugent, K.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Single mode buried optical waveguides have been fabricated in fused silica by MeV proton implantation using a focussed hydrogen ion beam. The technique has the potential to direct write waveguide devices and produce multi-layered structures, without the need for intermediate steps such as mask fabrication or layered depositions. A micron resolution Confocal Raman Spectrometer has been used to map the distribution of atomic vacancies that forms the waveguiding region. The results are compared with theoretical calculations. Losses of 3 dB cm{sup -1} have been measured in unannealed samples, which decreases to less than 0.5 dB cm{sup -1} after annealing at 500 degrees Celsius. We describe methods for determining the refractive index distribution of single mode buried waveguides from their output intensity distributions via an inversion of the scalar wave equation. (authors). 5 figs.

  11. Determination of phosphorus contamination during antimony implantation by measurement and simulation

    International Nuclear Information System (INIS)

    Kuruc, M.; Hulenyi, L.; Kinder, R.

    2006-01-01

    Experimental determination of phosphorus cross-contamination during antimony implantation is presented. As a suitable structure for this experiment, a buried layer was employed which is created by implanting antimony followed by a long diffusion process. The samples implanted in different implanters were analysed by secondary ion mass spectrometry (SIMS), four-point probe and spreading resistance methods. The obtained results were compared with those calculated by program SUPREM-IV. Methods that can and cannot be used to determine phosphorus contamination during antimony implantation and to estimate the fluence of phosphorus being co-implanted with antimony are described in detail

  12. Amorphization and recrystallization in MeV ion implanted InP crystals

    International Nuclear Information System (INIS)

    Xiong, F.; Nieh, C.W.; Jamieson, D.N.; Vreeland, T. Jr.; Tombrello, T.A.

    1988-01-01

    A comprehensive study of MeV- 15 N-ion-implanted InP by a variety of analytical techniques has revealed the physical processes involved in MeV ion implantation into III-V compound semiconductors as well as the influence of post-implantation annealing. It provides a coherent picture of implant distribution, structural transition, crystalline damage, and lattice strain in InP crystals induced by ion implantation and thermal annealing. The experimental results from the different measurements are summarized in this report. Mechanisms of amorphization by implantation and recrystallization through annealing in MeV-ion-implanted InP are proposed and discussed in light of the results obtained

  13. Determination of phosphorus and calcium in biological samples by activation with 14 MeV neutrons

    International Nuclear Information System (INIS)

    Berretta, Jose Roberto

    1995-01-01

    Analytical methods for phosphorus and calcium in biological samples by means of activation with 14 MeV neutrons, using the Van de Graaff accelerator from the Instituto de Pesquisas Energeticas e Nucleares, SP, Brazil are developed. For phosphorus analysis, powder samples were pressed into pellets, weighed and transferred to polyethylene plastic envelopes. The pellets with cadmium shielding were irradiated under a fast neutron flux for 5 to 10 minutes, and further counted in a HPGe detector for 5 minutes. Calcium analysis was performed by cyclic irradiation. Samples were irradiated for 10 minutes. After a decay time of 2 minutes, gamma counting was performed for 10 minutes. After a decay time of 2 minutes, a new irradiation ws made. The irradiation cycle was repeated 5 times and the counting spectrum obtained in each cycle was accumulated in the multi channel analyser. The variation of the neutron flux was followed by using a BF 3 detector calibrated with and aluminium monitor. By means of the gamma spectrum and the neutron counting of the BF 3 detector it was possible to estimate phosphorus and calcium concentrations in the sample analyzed. The methods were checked in the reference samples from the International Atomic Energy Agency and in commercial samples of powder milk, fertilizer and animal bone. Phosphorus contents in bone (A3/74) and milk (A-11) reference materials were (15.6 +- 1.8%) and (0.9 +- 0.1)%, respectively. These values are in good agreement to the certified values (15.5 +- 0.5)% and (0.910 +- 0.102)%, respectively. Calcium analysis carried out in bone (A3/74) presented a value of (31.8+-4.1)% and the certified value was of (31.3 +- 0.3)%. Detection limits for phosphorus and calcium were determined in different analyzed samples. The agreement of the results obtained with the certified values confirmed the suitability of the methods for phosphorus and calcium analysis. The methods are fast and laborious chemical procedures are not required. (author)

  14. Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons

    Science.gov (United States)

    Arutyunov, N.; Emtsev, V.; Krause-Rehberg, R.; Elsayed, M.; Kessler, C.; Kozlovski, V.; Oganesyan, G.

    2015-06-01

    Defects in phosphorus-doped silicon samples of floating-zone material, n-FZ-Si(P), produced under irradiation with 15 MeV protons at room temperature are studied by positron annihilation lifetime spectroscopy over the temperature range of ∼ 30 K - 300 K and by low- temperature Hall effect measurements. After annealing of E-centersand divacancies, we detected for the first time high concentrations of positron traps which had not been observed earlier. These defects are isochronally annealed over the temperature interval of ∼ 320 °C - 700 °C they manifest themselves as electrically neutral deep donor centersin the material of n-type. A long-lived component of the positron lifetime, τ2(I2 enthalpy and entropy of annealing of these centersare Ea ∼ 1.05(0.21) eV and ΔSm ≈ 3.1(0.6)kB, respectively. It is argued that the microstructure of the defect consists of two vacancies, VV, and one atom of phosphorus, P. The split configuration of the VPV complex is shortly discussed.

  15. Effect of substrate temperature on the radiation damage from MeV Si implantation in Si

    International Nuclear Information System (INIS)

    Yu, X.K.; Shao Lin; Rusakova, Irene; Wang, X.M.; Ma, K.B.; Chen, H.; Liu, Jiarui; Chu, W.-K.

    2006-01-01

    We have investigated the radiation damage by MeV implantation of Si in Si and its evolution under thermal annealing. Si wafers were implanted with MeV Si at various substrate temperatures. Damages were characterized by Rutherford-backscattering (RBS) channeling and by transmission electron microscopy (TEM). Defect formation after post-implantation annealing is very sensitive to the substrate temperatures during implantation. When the substrate temperature was decreased to 200 K, TEM revealed two distinct bands of damage after annealing: one around the mean projected ion range and another at half the projected range. Our study indicates that the formation of defects at half range results from the solid phase epitaxy growth of initial buried amorphous layers

  16. Fluorescence lifetime studies of MeV erbium implanted silica glass

    International Nuclear Information System (INIS)

    Lidgard, A.; Polman, A.; Jacobsen, D.C.; Blonder, G.E.; Kistler, R.; Poate, J.M.; Becker, P.C.

    1991-01-01

    MeV erbium ion implantation into various SiO 2 glasses has been studied with the aim of incorporating the rare-earth dopant as an optically active ion in the silica network. The lifetime of the excited state ranges from 1.6 to 12.8 ms, depending on base material and implantation fluence. These results have positive implications for silica-based integrated optical technology. (Author)

  17. Fluorescence lifetime studies of MeV erbium implanted silica glass

    Energy Technology Data Exchange (ETDEWEB)

    Lidgard, A.; Polman, A.; Jacobsen, D.C.; Blonder, G.E.; Kistler, R.; Poate, J.M.; Becker, P.C. (AT and T Bell Labs., Murray Hill, NJ (USA))

    1991-05-23

    MeV erbium ion implantation into various SiO{sub 2} glasses has been studied with the aim of incorporating the rare-earth dopant as an optically active ion in the silica network. The lifetime of the excited state ranges from 1.6 to 12.8 ms, depending on base material and implantation fluence. These results have positive implications for silica-based integrated optical technology. (Author).

  18. Effect of time varying phosphorus implantation on optoelectronics properties of RF sputtered ZnO thin-films

    Science.gov (United States)

    Murkute, Punam; Ghadi, Hemant; Saha, Shantanu; Chavan, Vinayak; Chakrabarti, Subhananda

    2018-03-01

    ZnO has potential application in the field of short wavelength devices like LED's, laser diodes, UV detectors etc, because of its wide band gap (3.34 eV) and high exciton binding energy (60 meV). ZnO possess N-type conductivity due to presence of defects arising from oxygen and zinc interstitial vacancies. In order to achieve P-type or intrinsic carrier concentration an implantation study is preferred. In this report, we have varied phosphorous implantation time and studied its effect on optical as well structural properties of RF sputtered ZnO thin-films. Implantation was carried out using Plasma Immersion ion implantation technique for 10 and 20 s. These films were further annealed at 900°C for 10 s in oxygen ambient to activate phosphorous dopants. Low temperature photoluminescence (PL) spectra measured two distinct peaks at 3.32 and 3.199 eV for 20 s implanted sample annealed at 900°C. Temperature dependent PL measurement shows slightly blue shift in peak position from 18 K to 300 K. 3.199 eV peak can be attributed to donoracceptor pair (DAP) emission and 3.32 eV peak corresponds to conduction-band-to-acceptor (eA0) transition. High resolution x-ray diffraction revels dominant (002) peak from all samples. Increasing implantation time resulted in low peak intensity suggesting a formation of implantation related defects. Compression in C-axis with implantation time indicates incorporation of phosphorus in the formed film. Improvement in surface quality was observed from 20 s implanted sample which annealed at 900°C.

  19. Accelerator based synthesis of hydroxyapatite by MeV ion implantation

    International Nuclear Information System (INIS)

    Rautray, Tapash R.; Narayanan, R.; Kwon, Tae-Yub; Kim, Kyo-Han

    2010-01-01

    Accelerator based MeV ion implantation of Ca 2+ and P 2+ into the titanium substrate to form hydroxyapatite (HA) has been carried out. Calcium hydroxide was formed after heating the calcium implanted titanium in air at 80 o C for 3 h. Upon subsequent annealing for 5 min at 600 o C HA was formed on the surface. Penetration depth of the HA layer in this method is much higher as compared to keV ion implantation. By elemental analysis, Ca/P ratio of the HA was found to be 1.76 which is higher than the ideal 1.67. This higher Ca/P ratio is attributed to the higher penetration depth of the MeV technique used.

  20. Patterned microstructures formed with MeV Au implantation in Si(1 0 0)

    International Nuclear Information System (INIS)

    Rout, Bibhudutta; Greco, Richard R.; Zachry, Daniel P.; Dymnikov, Alexander D.; Glass, Gary A.

    2006-01-01

    Energetic (MeV) Au implantation in Si(1 0 0) (n-type) through masked micropatterns has been used to create layers resistant to KOH wet etching. Microscale patterns were produced in PMMA and SU(8) resist coatings on the silicon substrates using P-beam writing and developed. The silicon substrates were subsequently exposed using 1.5 MeV Au 3+ ions with fluences as high as 1 x 10 16 ions/cm 2 and additional patterns were exposed using copper scanning electron microscope calibration grids as masks on the silicon substrates. When wet etched with KOH microstructures were created in the silicon due to the resistance to KOH etching cause by the Au implantation. The process of combining the fabrication of masked patterns with P-beam writing with broad beam Au implantation through the masks can be a promising, cost-effective process for nanostructure engineering with Si

  1. Enhanced electrical activation of Zn and Be implants in GaAs by the co-implantation of phosphorus

    International Nuclear Information System (INIS)

    Tang, A.C.T.; Sealy, B.J.; Rezazadeh, A.A.

    1989-01-01

    In this paper, we report that, through the use of rapid thermal annealing (RTA) and the co-implantation of phosphorus, an effective way of preventing the in- and out-diffusion of zinc and beryllium has been achieved in GaAs. This is of particular significance in the case of the beryllium implanted samples because, to date, there has been no method for preventing the out-diffusion of beryllium atoms at high annealing temperatures. We have observed that the reverse annealing behaviour of the Be-implanted samples has been modified after the co-implantation of phosphorus. Furthermore, abrupt electrical profiles with hole concentrations of the order of 6x10 19 cm -3 have been achieved with the Zn+P implants after annealing at 850 0 C for 30 s. (author)

  2. Activation of boron and phosphorus atoms implanted in polycrystalline silicon films at low temperatures

    International Nuclear Information System (INIS)

    Andoh, Nobuyuki; Sameshima, Toshiyuki; Andoh, Yasunori

    2005-01-01

    Phosphorus atoms implanted in laser crystallized polycrystalline silicon films were activated by a heat treatment in air at 260 deg. C for 1, 3 and 24 h. Analysis of ultraviolet reflectivity of phosphorus-doped silicon films implanted by ion doping method at 4 keV revealed that the thickness of the top disordered layer formed by ion bombardment was 6 nm. It is reduced to 4 nm by a 3 h heat treatment at 260 deg. C by recrystallization of disordered region. The electrical conductance of silicon films implanted increased to 1.7x10 5 S/sq after 3 h heat treatment

  3. The annealing of phosphorus-implanted silicon investigated at low temperatures

    International Nuclear Information System (INIS)

    Wagner, C.; Burkhardt, F.

    1978-01-01

    Phosphorus ions are implanted at 50 keV into misaligned silicon crystals at 20 and 300 0 C, respectively. The ion doses used are 8 x 10 13 and 8 x 10 14 cm -2 , respectively. After annealing treatments the electrical properties of the samples are investigated by measuring Hall effect and sheet resistivity in the range from 300 to 4.2 K. The experimental results indicate some problems which must be taken into account for interpreting Hall effect measurements made at room temperature only. Furthermore the results give some new information on the annealing process in phosphorus implanted silicon and the influence of the implantation parameters. (author)

  4. The influence of excess vacancy generation on the diffusion of ion implanted phosphorus into silicon

    International Nuclear Information System (INIS)

    Bakowski, A.

    1985-01-01

    The diffusion of ion implanted phosphorus in silicon has been studied. It was found that the diffusion coefficient is not only dependent on the phosphorus surface concentration (the concentration effect) but also on the conditions at the silicon surface (the surface effect). The phosphorus diffusion coefficient is considerably lower when the silicon surface during annealing is covered with a CVD oxide layer. It is suggested that excess vacancies generated at the surface are reponsible for both the concentration and surface effects. Enhanced phosphorus diffusion is attributed to the disturbance of thermodynamic equilibrium in the crystal through phosphorus-vacancy part formation by vacancies introduced into silicon at the surface. On the basis of the data presented, it can be concluded that two mechanisms for excess vacancy generation are involved. Assuming that phosphorus diffuses via E-centers, calculations of the concentration profiles and the diffusion coefficient were performed for different concentrations and surface conditions. (orig.)

  5. Bloodcompatibility improvement of titanium oxide film modified by phosphorus ion implantation

    International Nuclear Information System (INIS)

    Yang, P.; Leng, Y.X.; Zhao, A.S.; Zhou, H.F.; Xu, L.X.; Hong, S.; Huang, N.

    2006-01-01

    Our recent investigation suggested that Ti-O thin film could be a newly developed antithrombotic material and its thromboresistance could be related to its physical properties of wide gap semiconductor. In this work, titanium oxide film was modified by phosphorus ion implantation and succeeding vacuum annealing. RBS were used to investigate phosphorus distribution profile. Contact angle test results show that phosphorus-doped titanium oxide film becomes more hydrophilic after higher temperature annealing, while its electric conductivity increases. Antithrombotic property of phosphorus-doped titanium oxide thin films was examined by clotting time and platelet adhesion tests. The results suggest that phosphorus doping is an effective way to improve the bloodcompatibility of titanium oxide film, and it is related to the changes of electron structure and surface properties caused by phosphorus doping

  6. Phosphorus-defect interactions during thermal annealing of ion implanted silicon

    Science.gov (United States)

    Keys, Patrick Henry

    Ion implantation of dopant atoms into silicon generates nonequilibrium levels of crystal defects that can lead to the detrimental effects of transient enhanced diffusion (TED), incomplete dopant activation, and p-n junction leakage. In order to control these effects, it is vital to have a clear understanding of dopant-defect interactions and develop models that account for these interactions. This research focuses on experimentally investigating and modeling the clustering of phosphorus dopant atoms with silicon interstitials. Damage recovery of 40keV Si+ implants in phosphorus doped wells is experimentally analyzed. The effects of background phosphorus concentration, self implant dose, and anneal temperature are investigated. Phosphorus concentrations ranging from 2.0 x 1017 to 4.0 x 1019 cm-3 and Si+ doses ranging from 5.0 x 1013 cm-2 to 2.0 x 1014 cm-2 are studied during 650-800°C anneals. A dramatic reduction in the number of interstitials bound in {311} defects with increasing phosphorus background concentration is observed. It is suggested that the reduction of interstitials in {311} defects at high phosphorus concentrations is due to the formation of phosphorus-interstitial clusters (PICs). The critical concentration for clustering (approximately 1.0 x 1019 cm-3 at 750°C) is strongly temperature dependent and in close agreement with the kink concentration of phosphorus diffusion. Information gained from these "well experiments" is applied to the study of direct phosphorus implantation. An experimental study is conducted on 40keV phosphorus implanted to a dose of 1.0 x 1014 cm-2 during 650-800°C anneals. Electrically inactive PICs are shown to form at concentrations below the solid solubility limit due to high interstitial supersaturations. Data useful for developing a model to accurately predict phosphorus diffusion under nonequilibrium conditions are extracted from the experimental results. A cluster-mediated diffusion model is developed using the

  7. Amorphization of tantalum by boron and phosphorus ion implantation

    International Nuclear Information System (INIS)

    Thome, L.; Benyagoub, A.; Bernas, H.; Pivin, J.C.; Cahn, R.W.

    1984-01-01

    The nature and depth dependence of the disorder produced by B and P implantation in Ta single crystals were studied in situ via channeling experiments and after implantation via grazing incidence electron diffraction experiments. The correlation of experimental results with implanted impurity profiles determined by SIMS shows that amorphous Ta-B and Ta-P alloys are produced for, respectively, 19% and 8% B and P concentrations in the implanted layer [fr

  8. High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

    Science.gov (United States)

    Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

    2018-03-01

    The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

  9. Nonlinear optical waveguides produced by MeV ion implantation in LiNbO3

    International Nuclear Information System (INIS)

    Sarkisov, S.S.; Curley, M.J.; Williams, E.K.; Ila, D.; Svetchnikov, V.L.; Zandbergen, H.W.; Zykov, G.A.; Banks, C.; Wang, J.-C.; Poker, D.B.; Hensley, D.K.

    2000-01-01

    We analyze microstructure, linear and nonlinear optical properties of planar waveguides produced by implantation of MeV Ag ions into LiNbO 3 . Linear optical properties are described by the parameters of waveguide propagation modes and optical absorption spectra. Nonlinear properties are described by the nonlinear refractive index. Operation of the implanted crystal as an optical waveguide is due to modification of the linear refractive index of the implanted region. The samples as implanted do not show any light-guiding. The implanted region has amorphous and porous microstructure with the refractive index lower than the substrate. Heat treatment of the implanted samples produces planar light-guiding layer near the implanted surface. High-resolution electron microscopy reveals re-crystallization of the host between the surface and the nuclear stopping region in the form of randomly oriented crystalline grains. They make up a light-guiding layer isolated from the bulk crystal by the nuclear stopping layer with low refractive index. Optical absorption of the sample as implanted has a peak at 430 nm. This peak is due to the surface plasmon resonance in nano-clusters of metallic silver. Heat treatment of the samples shifts the absorption peak to 545 nm. This is more likely due to the increase of the refractive index back to the value for the crystalline LiNbO 3 . The nonlinear refractive index of the samples at 532 nm (of the order of 10 -10 cm 2 W -1 ) was measured with the Z-scan technique using a picosecond laser source. Possible applications of the waveguides include ultra-fast photonic switches and modulators

  10. Zinc and phosphorus co-implantation in indium phosphide

    International Nuclear Information System (INIS)

    Yu, K.M.; Ridgway, M.C.

    1998-01-01

    Electrical activation and dopant diffusion in Zn-implanted InP after rapid thermal annealing have been investigated. For an as-implanted Zn concentration of ∼4x10 19 thinspcm -3 , only ∼7% of the implanted Zn atoms formed electrically active shallow acceptors following a 950thinsp degree C/5 s annealing cycle. The low activation was the result of rapid Zn out-diffusion emdash only ∼14% of the implanted dopant was retained after annealing. A significant enhancement in electrical activation and a reduction in Zn loss were achieved in Zn+P co-implanted samples which yielded a net hole concentration of ≤6x10 18 thinspcm -3 and >50% Zn retention. The saturation of the free hole concentration in Zn+P co-implanted samples was attributed to the formation of Zn interstitial donors and Group-V-related donor-type native defects. For comparison, Zn+Al and Zn+Al+P co-implanted samples were also examined to distinguish the relative influences of implantation-induced disorder and nonstoichiometry on electrical activation and dopant diffusion. For the given implant conditions, we found that nonstoichiometry was the dominant influence. copyright 1998 American Institute of Physics

  11. Si-nanoparticle synthesis using ion implantation and MeV ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Chulapakorn, T.; Wolff, M.; Primetzhofer, D.; Possnert, G. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J. [Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden); Hallen, A. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

    2015-12-15

    A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO{sub 2} matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO{sub 2} by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV {sup 127}I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Mixing of phosphorus and antimony ions in silicon by recoil implantation

    International Nuclear Information System (INIS)

    Kwok, H.L.; Lam, Y.W.; Wong, S.P.; Poon, M.C.

    1986-01-01

    The effects of mixing phosphorus and antimony ions in silicon by recoil implantation were examined. The electrical properties after ion mixing were investigated, and the results were compared with those obtained using other techniques. Different degrees of activation were also studied, by investigating the annealing behaviour. (U.K.)

  13. Development of a radiochemical procedure for certification of phosphorus implantation dose in silicon

    International Nuclear Information System (INIS)

    Paul, R.L.; Simons, D.S.

    2002-01-01

    The U.S. semiconductor industry relies heavily on secondary ion mass spectrometry (SIMS) for characterization of the depth distribution of dopants such as boron, arsenic, and phosphorus in silicon. To assist the industry in achieving high accuracy measurements, two Standard Reference Materials (SRMs) have been developed by NIST as SIMS calibration standards: SRM 2137 (Boron Implant in Silicon), certified by neutron depth profiling, and SRM 2134 (Arsenic Implant in Silicon), certified by instrumental neutron activation analysis. The industry is still in need of a phosphorus standard. Plans are currently underway to develop a phosphorus implant in silicon SRM, to be certified by radiochemical neutron activation analysis (RNAA). RNAA was chosen because other techniques lack the necessary sensitivity, chemical specificity and matrix independence to measure phosphorus at implantation levels. In order to assess the sensitivity, accuracy, and precision of RNAA for this work, preliminary measurements were carried out on six pieces of a phosphorus-implanted silicon wafer that was previously used in a round-robin study of SIMS measurement repeatability. Standards were prepared by depositing micro litre amounts of a standardized phosphorus solution on aluminum foil. A non-implanted silicon wafer was analysed as a blank. Samples were irradiated at a neutron fluency rate of 1 x 10 14 cm -2 s -1 to convert 31 P to 32 P, then mixed with milligram amounts of phosphorus carrier and dissolved in a mixture of nitric and hydrofluoric acids. Phosphorus was separated from the matrix by precipitation first as ammonium phosphomolybdate then as magnesium ammonium phosphate. The yield (fraction of recovered carrier) was determined gravimetrically as Mg(NH 4 )PO 4 .6H 2 O. 32 P was measured using a beta proportional counter. The measurements yielded a mean and standard deviation of (8.35 ± 0.20) x 10 14 atoms.cm -2 (relative standard deviation = 2.35 %), in agreement with both the nominal

  14. Simultaneous determination of nitrogen and phosphorus in cereals using 14 MeV Neutron Activation Analysis

    International Nuclear Information System (INIS)

    Bejarano, R.

    1992-01-01

    A method using 14 MeV neutron activation analysis was developed form non-destructive simultaneous determination of N and P in cereals. The samples were irradiated 5 min. after 0,5 min. decay time. The induced activities were measured using gamma spectrometry with Nal(Tl) well type detector. The accuracy, precision and detection limits obtained are discussed as well as the analytical results for different types of cereals. (Author) 10 refs., 8 tab., 1 fig

  15. Determination of phosphorus and potassium in sugar cane leaves by 14 MeV neutrons

    International Nuclear Information System (INIS)

    Diaz, R.A.; Nagy, A.Z.; Bakos, L.; Soria, J.C.

    1979-04-01

    The possibilities of N, P, K evaluation in samples of sugar cane leaves were discussed. A method for determining P and K content in this samples by 14 MeV neutron activation analysis is described. Corrections for K and Si were taken into account. The limit of detection for P was 0.1 mg and for K it was 4 mg. The precision for P and K was 10% in agreement with the values given by other authors. (author)

  16. Systemic Assessment of Calcium and Phosphorus Level after Implantation of Porous Iron in Rats

    Science.gov (United States)

    Siallagan, S. F.; Amelia, F.; Utami, N. D.; Ulum, M. F.; Boediono, A.; Estuningsih, S.; Hermawan, H.; Noviana, D.

    2017-07-01

    One of important aspects in bone healing process is physiological level of calcium (Ca), and phosphorus (P) that can be altered by implantation of biodegradable porous iron. Therefore, this study aims to investigate the concentration of Ca, P and Ca/P ratio in the peripheral blood during the implantation period up to 4 months. Forty adult male Sprague Dawley rats were used and divided into 3 groups receiving different pore size of iron implants (pore size 450, 580, 800μm) and one group of sham. The implants (5x2x0.5mm) were inserted into flat bone defects at latero-medial of femoral bone. Blood sample was taken from ventral tail artery before and after 4 month of implantation. Calcium and P concentrations in the blood were determined by BA-88A Semi-Auto Chemistry Analyzer. Results showed that concentration of Ca and P are slightly higher after implantation than before implantation, except for the 450μm group. The Ca/P ratio before and after implantation was increased in the sham group, and decreased in the 450 and 800μm groups. Concentration of Ca, P and Ca/P ratio insignificantly change between before and 4 months after surgery in some groups.

  17. Effects of high-energy (MeV) ion implantation of polyester films

    International Nuclear Information System (INIS)

    Ueno, Keiji; Matsumoto, Yasuyo; Nishimiya, Nobuyuki; Noshiro, Mitsuru; Satou, Mamoru

    1991-01-01

    The effects of high-energy ion beam irradiation on polyester (PET) films using a 3 MeV tandem-type ion beam accelerator were studied. O, Ni, Pt, and Au as ion species were irradiated at 10 14 -10 15 ions/cm 2 on 50 μm thick PET films. Physical properties and molecular structure changes were studied by the surface resistivity measurements and RBS. The surface resistivity decreases with an increase in irradiation dose. At 10 15 ions/cm 2 irradiation, the surface resistivity is 10 8 Ω/□. According to RBS and XPS analyses, some carbon and oxygen atoms in the PET are replaced by implanted ions and the -C=O bonds are destroyed easily by the ion beam. (orig.)

  18. Restoration of an electrical breakdown Terahertz emitter by 2 MeV He+ ion implantation

    International Nuclear Information System (INIS)

    Yang kang; Ma Mingwang; Chen Xiliang; Zhu Zhiyong

    2009-01-01

    The irradiation of solids by energetic particles may cause extensive displacement cascades and point defects (vacancies and interstitials), and can be widely used for material modification. In order to repair an electrical breakdown photoconductive antenna (PCA), we irradiated the (100)-oriented, low-temperature (LT) grown GaAs substrate with 10 16 /cm 2 of 2 MeV helium ions. After being implanted, electric resistance of the PCA has increased from 800 Ω to 60 ΜΩ. The irradiated PCA exhibits improvements in the output power in comparison with the electrical breakdown PCA and its signal intensity has increased from 2 nA to 8 nA. Accordingly, its output power has become more than one order of magnitude higher than that before irradiation. The frequency range of PCA has obviously improvement. (authors)

  19. Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

    International Nuclear Information System (INIS)

    Schrof, Julian; Müller, Ralph; Benick, Jan; Hermle, Martin; Reedy, Robert C.

    2015-01-01

    Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr 3 furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr 3 diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr 3

  20. Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs

    International Nuclear Information System (INIS)

    Usman, Muhammad; Hallen, Anders; Ghandi, Reza; Domeij, Martin

    2010-01-01

    Degradation of 4H-SiC power bipolar junction transistors (BJTs) under the influence of a high-energy helium ion beam was studied. Epitaxially grown npn BJTs were implanted with 3.0 MeV helium in the fluence range of 10 10 -10 11 cm -2 . The devices were characterized by their current-voltage (I-V) behaviour before and after the implantation, and the results showed a clear degradation of the output characteristics of the devices. Annealing these implanted devices increased the interface traps between passivation oxide and the semiconductor, resulting in an increase of base current in the low-voltage operation range.

  1. The eight modes observation in LiNbO3 induced by 3.0 MeV He+ implantation

    International Nuclear Information System (INIS)

    Wang Keming; Shi Borong; Zhou Zhuang; Wang Wei; Ding Peijun; Wang Zhonglie.

    1994-01-01

    The y-cut LiNbO 3 was implanted by 3.0 MeV He + to a dose of 2 x10 16 ions/cm 2 at liquid nitrogen temperature. The eight black and bright modes from He implanted LiNbO 3 waveguide were observed before and after rapid annealing. The refractive index profile is obtained by means of a non-stationary mode index calculation. The comparison of refractive index profile with damage profile is given. The result shows that the peak position of the refractive index profile is found to be in good agreement with the peak position of damage profile induced by 3.0 MeV He + implanted in LiNbO 3 based on transport of ions in matter (TRIM'92).(author)

  2. Study of phosphorus implanted and annealed silicon by electrical measurements and ion channeling technique

    CERN Document Server

    Hadjersi, T; Zilabdi, M; Benazzouz, C

    2002-01-01

    We investigated the effect of annealing temperature on the electrical activation of phosphorus implanted into silicon. The measurements performed using spreading resistance, four-point probe and ion channeling techniques have allowed us to establish the existence of two domains of variation of the electrical activation (350-700 deg. C) and (800-1100 deg. C). The presence of reverse annealing and the annihilation of defects have been put in a prominent position in the first temperature range. It has been shown that in order to achieve a complete electrical activation, the annealing temperature must belong to the second domain (800-1100 deg. C).

  3. Electrical properties of InP:Fe single crystals implanted by phosphorus ions

    International Nuclear Information System (INIS)

    Radautsan, S.I.; Tiginyanu, I.M.; Pyshnaya, N.B.

    1988-01-01

    Investigations of phosphorus ion implantation in InP:Fe monocrystals and of the post-implantation annealing process upon the electrical properties of InP:Fe were carried out. The electrical parameters of the samples have been determined by Hall effect measurements. The curves of electron surface concentration n s and mobility μ s as functions of annealing temperature in the range of 200 to 600 0 C are shown and discussed. In order to estimate the depth of donor levels in annealed samples the temperature dependence of the surface Hall coefficient has been studied in the range 100 to 400 K. The thermal electron activation energy has been determined to be 0.09 eV

  4. Double-step annealing and ambient effects on phosphorus implanted emitters in silicon

    International Nuclear Information System (INIS)

    Koji, T.; Tseng, W.F.; Mayer, J.W.; Suganuma, T.

    1979-01-01

    Emitters of npn silicon bipolar transistors have been made by a phosphorus implantation at 50 keV P + to a dose of 1 x 10 16 cm -2 . This was followed by high temperature processes to reduce lattice disorder, to drive-in the phosphorus atoms, and to form oxide layers. The first process step was carried out by using single- and double-step anneals in various ambients (dry N 2 , dry 0 2 and steam) while the drive-in and oxidation steps were common for all structures. Electrical measurements on emitter/base leakage current, low frequency (popcorn) noise and current gain showed that the annealing ambient had a major influence. The transistors with implanted emitters annealed in a dry N 2 ambient are comparable to commercial ones with thermally-diffused emitters. Transmission electron microscopy observations on samples annealed in steam ambients revealed dislocations extending into the sidewall of the emitter/base junction. This sidewell penetration of dislocations is the main origin of the degradation of the emitter/base junction characteristics. (author)

  5. Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs

    Energy Technology Data Exchange (ETDEWEB)

    Usman, Muhammad; Hallen, Anders; Ghandi, Reza; Domeij, Martin, E-mail: musman@kth.s [Microelectronics and Applied Physics, School of Communication and Information Technology, Royal Institute of Technology (KTH), Electrum 229, 16440 Kista (Sweden)

    2010-11-01

    Degradation of 4H-SiC power bipolar junction transistors (BJTs) under the influence of a high-energy helium ion beam was studied. Epitaxially grown npn BJTs were implanted with 3.0 MeV helium in the fluence range of 10{sup 10}-10{sup 11} cm{sup -2}. The devices were characterized by their current-voltage (I-V) behaviour before and after the implantation, and the results showed a clear degradation of the output characteristics of the devices. Annealing these implanted devices increased the interface traps between passivation oxide and the semiconductor, resulting in an increase of base current in the low-voltage operation range.

  6. Monte Carlo simulation of channeled and random profiles of heavy ions implanted in silicon at high energy (1.2 MeV)

    International Nuclear Information System (INIS)

    Mazzone, A.M.

    1987-01-01

    In order to study channeling effects and implants of heavy ions with energy of few MeV in silicon, ion distributions are calculated with a Monte Carlo method for axial [(001) axis], planar, and nominally random directions for As + and P + ions implanted into silicon with energies in the range 100 keV to 2 MeV. The calculation indicates an appreciable channeling at the higher energy only for the (001) axis and the (110) planes. For heavy ions with energy in the MeV range the subsidence of channeling into major channels and the disappearance of minor channels are shown

  7. Effect of MeV energy He and N pre-implantation on the formation of porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Manuaba, A. E-mail: manu@rmki.kfki.hu; Paszti, F.; Ortega, C.; Grosman, A.; Horvath, Z.E.; Szilagyi, E.; Khanh, N.Q.; Vickridge, I

    2001-06-01

    The effects of MeV energy He and N pre-implantation of Si substrate on the structure of porous silicon formed by anodic etching were studied by measuring the depth profiles of {sup 15}N decorating the pores walls. Radiation damage was recovered by annealing after the implantation. It was found that the He implant accelerates the etching process, probably due to the bubbles or the remaining lattice damage. At a dose of 8x10{sup 16} ions/cm{sup 2} the He containing layer was formed with a significantly enhanced porosity due to the contribution of the large-sized bubbles. At the highest dose of 32.5x10{sup 16} ions/cm{sup 2} flaking took place during the anodic etching. In contrast to He, N stopped the anodic etching at a depth of critical N concentration of {approx}0.9 at.%. For the lowest implantation dose, where the peak concentration was below this limit, the pores propagate through the implanted layer with an enhanced speed.

  8. Effect of MeV energy He and N pre-implantation on the formation of porous silicon

    International Nuclear Information System (INIS)

    Manuaba, A.; Paszti, F.; Ortega, C.; Grosman, A.; Horvath, Z.E.; Szilagyi, E.; Khanh, N.Q.; Vickridge, I.

    2001-01-01

    The effects of MeV energy He and N pre-implantation of Si substrate on the structure of porous silicon formed by anodic etching were studied by measuring the depth profiles of 15 N decorating the pores walls. Radiation damage was recovered by annealing after the implantation. It was found that the He implant accelerates the etching process, probably due to the bubbles or the remaining lattice damage. At a dose of 8x10 16 ions/cm 2 the He containing layer was formed with a significantly enhanced porosity due to the contribution of the large-sized bubbles. At the highest dose of 32.5x10 16 ions/cm 2 flaking took place during the anodic etching. In contrast to He, N stopped the anodic etching at a depth of critical N concentration of ∼0.9 at.%. For the lowest implantation dose, where the peak concentration was below this limit, the pores propagate through the implanted layer with an enhanced speed

  9. Determination of phosphorus and calcium in biological samples by activation with 14 MeV neutrons; Determinacao de fosforo e calcio em amostras biologicas por ativacao com neutrons de 14 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Berretta, Jose Roberto

    1995-07-01

    Analytical methods for phosphorus and calcium in biological samples by means of activation with 14 MeV neutrons, using the Van de Graaff accelerator from the Instituto de Pesquisas Energeticas e Nucleares, SP, Brazil are developed. For phosphorus analysis, powder samples were pressed into pellets, weighed and transferred to polyethylene plastic envelopes. The pellets with cadmium shielding were irradiated under a fast neutron flux for 5 to 10 minutes, and further counted in a HPGe detector for 5 minutes. Calcium analysis was performed by cyclic irradiation. Samples were irradiated for 10 minutes. After a decay time of 2 minutes, gamma counting was performed for 10 minutes. After a decay time of 2 minutes, a new irradiation ws made. The irradiation cycle was repeated 5 times and the counting spectrum obtained in each cycle was accumulated in the multi channel analyser. The variation of the neutron flux was followed by using a BF{sub 3} detector calibrated with and aluminium monitor. By means of the gamma spectrum and the neutron counting of the BF{sub 3} detector it was possible to estimate phosphorus and calcium concentrations in the sample analyzed. The methods were checked in the reference samples from the International Atomic Energy Agency and in commercial samples of powder milk, fertilizer and animal bone. Phosphorus contents in bone (A3/74) and milk (A-11) reference materials were (15.6 +- 1.8%) and (0.9 +- 0.1)%, respectively. These values are in good agreement to the certified values (15.5 +- 0.5)% and (0.910 +- 0.102)%, respectively. Calcium analysis carried out in bone (A3/74) presented a value of (31.8+-4.1)% and the certified value was of (31.3 +- 0.3)%. Detection limits for phosphorus and calcium were determined in different analyzed samples. The agreement of the results obtained with the certified values confirmed the suitability of the methods for phosphorus and calcium analysis. The methods are fast and laborious chemical procedures are not required

  10. Ion beam synthesis of IrSi3 by implantation of 2 MeV Ir ions

    International Nuclear Information System (INIS)

    Sjoreen, T.P.; Chisholm, M.F.; Hinneberg, H.J.

    1992-11-01

    Formation of a buried IrSi 3 layer in (111) oriented Si by ion implantation and annealing has been studied at an implantation energy of 2 MeV for substrate temperatures of 450--550C. Rutherford backscattering (RBS), ion channeling and cross-sectional transmission electron microscopy showed that a buried epitaxial IrSi 3 layer is produced at 550C by implanting ≥ 3.4 x 10 17 Ir/cm 2 and subsequently annealing for 1 h at 1000C plus 5 h at 1100C. At a dose of 3.4 x 10 17 Ir/cm 2 , the thickness of the layer varied between 120 and 190 nm and many large IrSi 3 precipitates were present above and below the film. Increasing the dose to 4.4 x 10 17 Ir/cm 2 improved the layer uniformity at the expense of increased lattice damage in the overlying Si. RBS analysis of layer formation as a function of substrate temperature revealed the competition between the mechanisms for optimizing surface crystallinity vs. IrSi 3 layer formation. Little apparent substrate temperature dependence was evident in the as-implanted state but after annealing the crystallinity of the top Si layer was observed to deteriorate with increasing substrate temperature while the precipitate coarsening and coalescence improved

  11. Positron probing of open vacancy volume of phosphorus-vacancy complexes in float-zone n-type silicon irradiated by 0.9-MeV electrons and by 15-MeV protons

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunov, Nikolay [Department of Physics, Martin Luther University Halle (Germany); Ioffe Physico-Technical Institute, St. Petersburg (Russian Federation); Institute of Ion-Plasma and Laser Technologies (Institute of Electronics), Tashkent (Uzbekistan); Emtsev, Vadim; Oganesyan, Gagik [Ioffe Physico-Technical Institute, St. Petersburg (Russian Federation); Elsayed, Mohamed [Department of Physics, Martin Luther University Halle (Germany); Faculty of Science, Department of Physics, Minia University (Egypt); Krause-Rehberg, Reinhard [Department of Physics, Martin Luther University Halle (Germany); Abrosimov, Nikolay [Leibniz Institute for Crystal Growth, Berlin (Germany); Kozlovski, Vitalii [St. Petersburg State Polytechnical University (Russian Federation)

    2017-07-15

    For the first time the samples, cut from the same wafer of crystals of float-zone silicon, n-FZ-Si(P) and n-FZ-Si(Bi), were subjected to irradiation with 0.9-MeV electrons and 15-MeV protons at RT for studying them by low-temperature positron annihilation lifetime spectroscopy. Measurements of Hall effect have been used for the materials characterization. The discussion is focused on the open vacancy volume (V{sub op}) of the thermally stable group-V-impurity-vacancy complexes comprising the phosphorus atoms; the bismuth-related vacancy complexes are briefly considered. The data of positron probing of PV pairs (E-centers), divacancies, and the thermally stable defects in the irradiated n-FZ-Si(P) materials are compared. Beyond a reliable detecting of the defect-related positron annihilation lifetime in the course of isochronal annealing at ∝ 500 C, the recovery of concentration of phosphorus-related shallow donor states continues up to ∝650-700 C. The open vacancy volumes V{sub op} to be characterized by long positron lifetimes Δτ{sub 2} ∝271-289 ps in (gr.-V-atom)-V{sub op} complexes are compared with theoretical data available for the vacancies, τ(V{sub 1}), and divacancies, τ(V{sub 2}). The extended semi-vacancies, 2V{sub s-ext}, and relaxed vacancies, 2V{sub inw}, are proposed as the open volume V{sub op} in (gr.-V-atom)-V{sub op} complexes. It is argued that at high annealing temperature the defect P{sub s}-V{sub op}-P{sub s} is decomposed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. TEM investigation of the microstructural evolution in nickel during MeV helium implantation

    International Nuclear Information System (INIS)

    Gadalla, A.A.; Jaeger, W.; Ehrhart, P.

    1986-01-01

    In a recent TEM investigation of high energy He-implanted copper the low average helium density could be understood by the observation of the coexistence of two types of vacancy agglomerates i.e. relaxed vacancy agglomerates in the form of stacking fault tetrahedra (SFT) and small bubbles. In order to arrive at a more systematic understanding of the evolution of the microstructure during high energy helium implantation we extended these TEM investigations to nickel. Of particular interest was also the minimum implantation dose necessary to precipitate bubbles that are large enough to be visible in the TEM. (orig./RK)

  13. Deep level transient spectroscopy studies of charge traps introduced into silicon by channeling ion implantation of phosphorus

    International Nuclear Information System (INIS)

    McCallum, J.C.; Lay, M.; Deenapanray, P.N.K.; Jagadish, C.

    2002-01-01

    Full text: The operating conditions of a silicon-based quantum computer are expected to place stringent requirements on the quality of the material and the processes used to make it. In the Special Research Centre for Quantum Computer Technology, ion implantation is one of the principle processing techniques under investigation for forming an ordered array of phosphorus atoms. This technique introduces defect centres in silicon which act as charge traps. Charge traps are expected to be detrimental to operation of the device. These defect centres, their dependence on ion implantation and thermal annealing conditions are being quantified using Deep Level Transient Spectroscopy (DLTS). Since the aspect ratio of the masks required for the top-down fabrication process restrict the incident ions to a range of angles in which they may undergo channeling implantation in the silicon substrate, we have examined the effect of channeling implantation on the nature and quantity of the charge traps produced. This is the first time that DLTS studies have been performed for channeling implantation of a dopant species in silicon. DLTS is well-suited to the dose regime of ∼10 11 P/cm 3 required for the quantum computer, however, a standard DLTS measurement is unable to probe the shallow depth range of ∼ 20 nm required for the P atoms (∼ 10-15 keV implantation energy). Our aim has therefore been to perform P implants in the appropriate dose regime but using higher implantation energies, ∼ 75-450 keV, where DLTS can directly identify and profile the charge traps induced by the implantation step and monitor their annealing characteristics during subsequent processing. To map the behaviour observed in this energy regime onto the low energy range required for the quantum computer we are comparing the DLTS results to damage profiles predicted by the Monte Carlo code Crystal Trim which is used in the semiconductor industry to simulate ion implantation processes in crystalline

  14. Beam-envelope calculations of space-charge loaded beams in MeV dc ion-implantation facilities

    International Nuclear Information System (INIS)

    Urbanus, W.H.; Bannenberg, J.G.; Doorn, S.; Saris, F.W.; Koudijs, R.; Dubbelman, P.; Koelewijn, W.

    1989-01-01

    MeV dc ion accelerators are being developed that can deliver a beam current up to several hundred micro-amperes. At the low-energy part of the accelerator, the beam transport is space-charge dominated rather than emittance dominated. A system of differential equations has been derived, based on the Kapchinski-Vladimirski equations, which describe the envelope of a space-charge loaded ion beam, taking a longitudinal electrical field in an accelerating tube into account. The equations have been used to design the accelerator of a high-current 1 MV heavy-ion implantation facility. Furthermore, the design of a 2 MV accelerator is presented, which is used for analyzing techniques such as RBS and PIXE. Both facilities are based on single-ended Van de Graaff accelerators. (orig.)

  15. The emittance and brightness characteristics of negative ion sources suitable for MeV ion implantation

    International Nuclear Information System (INIS)

    Alton, G.D.

    1987-01-01

    This paper provides the description and beam properties of ion sources suitable for use with ion implantation devices. Particular emphasis is placed on the emittance and brightness properties of state-of-the-art, high intensity, negative ion sources based on the cesium ion sputter principle

  16. The studies of surface properties of 1.5 MeV Si-implanted silicon by multiphonon Raman spectrum

    International Nuclear Information System (INIS)

    Huang, X.

    1995-01-01

    The surface layer of crystalline silicon implanted by 1.5 MeV Si ions with doses ranging from 1 x 10 11 to 1 x 10 15 Si + cm -2 has been studied by two-phonon Raman spectra in both the acoustical overtone region and optical overtone region. Two-phonon Raman line intensities and shifts have been used to investigate the properties in the skin layer. The experimental two-phonon Raman spectra showed a decrease in intensity for both optical and acoustical two-phonon Raman peaks and also showed shifts by different amounts in different directions depending on the particular phonons. The stress values obtained by two-phonon Raman line shifts are compared with those obtained previously by one-phonon Raman shifts. The comparison shows that the surface defects make no contribution to two-phonon Raman line shifts. The two-phonon Raman line shifts show that the surface stress increases as a function of implantation doses. (author)

  17. Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn0.85Mg0.15O thin films

    International Nuclear Information System (INIS)

    Saha, S.; Nagar, S.; Chakrabarti, S.

    2014-01-01

    ZnMgO thin films deposited on 〈100〉 Si substrates by RF sputtering were annealed at 800, 900, and 1000 °C after phosphorus plasma immersion ion implantation. X-ray diffraction spectra confirmed the presence of 〈101 ¯ 0〉 and 〈101 ¯ 3〉 peaks for all the samples. However, in case of the annealed samples, the 〈0002〉 peak was also observed. Scanning electron microscopy images revealed the variation in surface morphology caused by phosphorus implantation. Implanted and non-implanted samples were compared to examine the effects of phosphorus implantation on the optical properties of ZnMgO. Optical characteristics were investigated by low-temperature (15 K) photoluminescence experiments. Inelastic exciton–exciton scattering and localized, and delocalized excitonic peaks appeared at 3.377, 3.42, and 3.45 eV, respectively, revealing the excitonic effect resulting from phosphorus implantation. This result is important because inelastic exciton–exciton scattering leads to nonlinear emission, which can improve the performance of many optoelectronic devices

  18. Formation of slab waveguides in eulytine type BGO and CaF{sub 2} crystals by implantation of MeV nitrogen ions

    Energy Technology Data Exchange (ETDEWEB)

    Banyasz, I., E-mail: bakonyjako@yahoo.es [Department of Crystal Physics, Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Berneschi, S. [Centro Studi e Ricerche ' Enrico Fermi' , Piazza del Viminale 2, 00184 Roma (Italy); MDF-Lab, ' ' Nello Carrara' ' Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Khanh, N.Q.; Lohner, T. [Research Institute for Technical Physics and Materials Science of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Lengyel, K. [Department of Crystal Physics, Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Fried, M. [Research Institute for Technical Physics and Materials Science of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Peter, A. [Department of Crystal Physics, Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Petrik, P.; Zolnai, Z. [Research Institute for Technical Physics and Materials Science of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Watterich, A. [Department of Crystal Physics, Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Nunzi-Conti, G.; Pelli, S.; Righini, G.C. [MDF-Lab, ' ' Nello Carrara' ' Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy)

    2012-09-01

    Ion implantation, compared with other waveguide fabrication methods, has some unique advantages. It has proved to be a universal technique for producing waveguides in most optical materials. The authors of the present article reported fabrication of channel and slab waveguides in an Erbium-doped tungsten tellurite glass by implantation of MeV energy N{sup +} ions. The present article reports successful adaptation of the same technique to the fabrication of slab waveguides in eulytine type bismuth germanate (BGO) and CaF{sub 2} crystals. This is the first report on successful waveguide fabrication in these materials using 3.5 MeV N{sup +} ions at implanted fluences between 5 Multiplication-Sign 10{sup 15} and 4 Multiplication-Sign 10{sup 16} ions/cm{sup 2}. Spectroscopic ellipsometric measurements revealed the existence of guiding structures in both materials. M-line spectroscopic measurements indicated guiding effect in the as-implanted BGO up to 1550 nm and up to 980 nm in the as-implanted CaF{sub 2}. Ion implantation induced the appearance of three peaks in the UV/Vis absorption spectrum of CaF{sub 2}, that can be attributed to colour centres.

  19. Specific features of the current–voltage characteristics of SiO{sub 2}/4H-SiC MIS structures with phosphorus implanted into silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Mikhaylova, A. I., E-mail: m.aleksey.spb@gmail.com; Afanasyev, A. V.; Ilyin, V. A.; Luchinin, V. V. [St. Petersburg State Electrotechnical University LETI (Russian Federation); Sledziewski, T. [Friedrich–Alexander–Universität Erlangen–Nürnberg (Germany); Reshanov, S. A.; Schöner, A. [Ascatron AB (Sweden); Krieger, M. [Friedrich–Alexander–Universität Erlangen–Nürnberg (Germany)

    2016-01-15

    The effect of phosphorus implantation into a 4H-SiC epitaxial layer immediately before the thermal growth of a gate insulator in an atmosphere of dry oxygen on the reliability of the gate insulator is studied. It is found that, together with passivating surface states, the introduction of phosphorus ions leads to insignificant weakening of the dielectric breakdown field and to a decrease in the height of the energy barrier between silicon carbide and the insulator, which is due to the presence of phosphorus atoms at the 4H-SiC/SiO{sub 2} interface and in the bulk of silicon dioxide.

  20. Optical, structural, and chemical properties of CR-39 implanted with 5.2 MeV doubly charged carbon ions

    Science.gov (United States)

    Ali, Dilawar; Butt, M. Z.; Ishtiaq, Mohsin; Waqas Khaliq, M.; Bashir, Farooq

    2016-11-01

    Poly-allyl-diglycol-carbonate (CR-39) specimens were irradiated with 5.2 MeV doubly charged carbon ions using Pelletron accelerator. Ion dose was varied from 5 × 1013 to 5 × 1015 ions cm-2. Optical, structural, and chemical properties were investigated by UV-vis spectroscopy, x-ray diffractometer, and FTIR/Raman spectroscopy, respectively. It was found that optical absorption increases with increasing ion dose. Absorption edge shifts from UV region to visible region. The measured opacity values of pristine and ion implanted CR-39 range from 0.0519 to 4.7959 mm-1 following an exponential growth (9141%) with the increase in ion dose. The values of direct and indirect band gap energy decrease exponentially with an increase in ion dose by 59% and 71%, respectively. However, average refractive index in the visible region increases from 1.443 to 2.864 with an increase in ion dose, by 98%. A linear relation between band gap energy and crystallite size was observed. Both the number of carbon atoms in conjugation length and the number of carbon atoms per cluster increase linearly with the increase in ion dose. FTIR spectra showed that on C+2 ions irradiation, the intensity of all bands decreases gradually without appearance of any new band, indicating degradation of polymer after irradiation. Raman spectra revealed that the density of -CH2- group decreases on C+2 ions irradiation. However, the structure of CR-39 is completely destroyed on irradiation with ion dose 1 × 1015 and 5 × 1015 ions cm-2.

  1. Exfoliation of GaAs caused by MeV 1H and 4He ion implantation at left angle 100 right angle , left angle 110 right angle axial and random orientations

    International Nuclear Information System (INIS)

    Rauhala, E.; Raeisaenen, J.

    1994-01-01

    The exfoliation procedure of the ion range determination of gaseous implants in single crystal GaAs is investigated. The correlation of the observed crater depth with the ion range is studied for random, left angle 100 right angle and left angle 110 right angle axial orientation high dose implantations of 1.5-2.5 MeV 1 H and 4 He ions. Depending on the experimental conditions, the crater depths corresponded to range values between the modal range and the range maximum. The observed crater depths could be related to the actual He concentration depth distributions by determining the profiles of the 4 He implants by 2.7 MeV proton backscattering. The implantation parameters affecting the exfoliation process, and especially the increase rate of the sample temperature, are investigated. The range distribution parameters for the 1.5 MeV 4 He implants are presented. ((orig.))

  2. MeV ion irradiation effects on the luminescence properties of Si-implanted SiO{sub 2}-thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chulapakorn, T.; Primetzhofer, D. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J.; Hallen, A. [Royal Institute of Technology (KTH), School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

    2016-12-15

    The effects of MeV heavy ion irradiation at varying fluence and flux on excess Si, introduced in SiO{sub 2} by keV ion implantation, are investigated by photoluminescence (PL). From the PL peak wavelength (λ) and decay lifetime (τ), two PL sources are distinguished: (i) quasi-direct recombination of excitons of Si-nanoparticles (SiNPs), appearing after thermal annealing (λ > 720 nm, τ ∝ μs), and (ii) fast-decay PL, possibly due to oxide-related defects (λ ∝ 575-690 nm, τ ∝ ns). The fast-decay PL (ii) observed before and after ion irradiation is induced by ion implantation. It is found that this fast-decay luminescence decreases for higher irradiation fluence of MeV heavy ions. After thermal annealing (forming SiNPs), the SiNP PL is reduced for samples irradiated by MeV heavy ions but found to stabilize at higher level for higher irradiation flux; the (ii) band vanishes as a result of annealing. The results are discussed in terms of the influence of electronic and nuclear stopping powers. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Radiation-induced effects in MgO single crystal by 200 keV and 1 MeV Ni ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, Ryohei; Nakai, Yoshihiro; Hamaguchi, Dai [Kyoto Inst. of Tech. (Japan); and others

    1997-03-01

    MgO(100) single crystals were implanted with 1.0 MeV and 200 keV Ni ions between 10{sup 15} and 10{sup 17} ions/cm{sup 2} at room temperature. Before and after thermal annealing the radiation damage and the lattice location of implanted Ni ions were analyzed by using Rutherford backscattering spectrometry with channeling and optical absorption measurements. For 1.0 MeV Ni ions, the disorder of Mg atoms increased slowly with ion dose near surface region, while it increased sharply and saturated with ion dose from 2x10{sup 16} ions/cm{sup 2} near ion range. The radiation damage was recovered and implanted Ni ions diffused to the whole of crystal and occupied substitutional positions after 1400degC annealing. For 200 keV Ni ions, the disorder of Mg atoms increased with dose near ion range and had a maximum at about 5x10{sup 16} ions/cm{sup 2}. This tendency agrees with the behavior of color centers obtained from optical measurements. For thermal annealing the radiation damage did not change during 500degC annealing, but the aggregate centers appeared after 300degC annealing. (author)

  4. Fabrication of planar optical waveguides by 6.0 MeV silicon ion implantation in Nd-doped phosphate glasses

    Science.gov (United States)

    Shen, Xiao-Liang; Dai, Han-Qing; Zhang, Liao-Lin; Wang, Yue; Zhu, Qi-Feng; Guo, Hai-Tao; Li, Wei-Nan; Liu, Chun-Xiao

    2018-04-01

    We report the fabrication of a planar optical waveguide by silicon ion implantation into Nd-doped phosphate glass at an energy of 6.0 MeV and a dose of 5.0 × 1014 ions/cm2. The change in the surface morphology of the glass after the implantation can be clearly observed by scanning electron microscopy. The measurement of the dark mode spectrum of the waveguide is conducted using a prism coupler at 632.8 nm. The refractive index distribution of the waveguide is reconstructed by the reflectivity calculation method. The near-field optical intensity profile of the waveguide is measured using an end-face coupling system. The waveguide with good optical properties on the glass matrix may be valuable for the application of the Nd-doped phosphate glass in integrated optical devices.

  5. Optical waveguide formed in Yb:GdCOB and Yb:YCOB crystals by 3.0MeV O{sup +} implantation

    Energy Technology Data Exchange (ETDEWEB)

    Jiao, Yang, E-mail: sdujy@163.com [College of Physics and Electronics, Shandong Normal University, Jinan 250014 (China)

    2013-07-15

    Planar optical waveguides were formed in Yb:GdCOB and Yb:YCOB crystals by 3.0 MeV O{sup +} ion implantation at fluence of 2 × 10{sup 15} ions/cm{sup 2} at room temperature, respectively. The prism coupling method was performed to characterize the dark-mode property of the waveguides. The refractive index profiles in the waveguides were reconstructed by reflectivity calculation method (RCM). The results show that after the implantation, a 1.5 μm-wide region with enhanced refractive-index was formed beneath the sample surfaces to act as waveguide structures for both Yb:GdCOB and Yb:YCOB.

  6. Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

    International Nuclear Information System (INIS)

    Hlatshwayo, T T; Kuhudzai, R J; Njoroge, E G; Malherbe, J B; O’Connell, J H; Skuratov, V A; Msimanga, M

    2015-01-01

    The effect of swift heavy ion (Xe 167 MeV) irradiation on polycrystalline SiC individually implanted with 360 keV Kr and Xe ions at room temperature to fluences of 2  ×  10 16 cm −2 and 1  ×  10 16 cm −2 respectively, was investigated using transmission electron microscopy (TEM), Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Implanted specimens were each irradiated with 167 MeV Xe +26 ions to a fluence of 8.3  ×  10 14 cm −2 at room temperature. It was observed that implantation of 360 keV Kr and Xe ions individually at room temperature amorphized the SiC from the surface up to a depth of 186 and 219 nm respectively. Swift heavy ion (SHI) irradiation reduced the amorphous layer by about 27 nm and 30 nm for the Kr and Xe samples respectively. Interestingly, the reduction in the amorphous layer was accompanied by the appearance of randomly oriented nanocrystals in the former amorphous layers after SHI irradiation in both samples. Previously, no similar nanocrystals were observed after SHI irradiations at electron stopping powers of 33 keV nm −1 and 20 keV nm −1 to fluences below 10 14 cm −2 . Therefore, our results suggest a fluence threshold for the formation of nanocrystals in the initial amorphous SiC after SHI irradiation. Raman results also indicated some annealing of radiation damage after swift heavy ion irradiation and the subsequent formation of small SiC crystals in the amorphous layers. No diffusion of implanted Kr and Xe was observed after swift heavy ion irradiation. (paper)

  7. Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Willems van Beveren, L. H., E-mail: laurensw@unimelb.edu.au; Bowers, H.; Ganesan, K.; Johnson, B. C.; McCallum, J. C.; Prawer, S. [School of Physics, University of Melbourne, Parkville, Victoria 3010 (Australia); Liu, R. [SIMS Facility, Office of the Deputy-Vice Chancellor (Research and Development) Western Sydney University, Locked Bag 1797, Penrith, New South Wales 2751 (Australia)

    2016-06-14

    Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here, we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at. %. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.

  8. Strain evolution in Si substrate due to implantation of MeV ion observed by extremely asymmetric x-ray diffraction

    International Nuclear Information System (INIS)

    Emoto, T.; Ghatak, J.; Satyam, P. V.; Akimoto, K.

    2009-01-01

    We studied the strain introduced in a Si(111) substrate due to MeV ion implantation using extremely asymmetric x-ray diffraction and measured the rocking curves of asymmetrical 113 diffraction for the Si substrates implanted with a 1.5 MeV Au 2+ ion at fluence values of 1x10 13 , 5x10 13 , and 1x10 14 /cm 2 . The measured curves consisted of a bulk peak and accompanying subpeak with an interference fringe. The positional relationship of the bulk peak to the subpeak and the intensity variation of those peaks with respect to the wavelengths of the x rays indicated that crystal lattices near the surface were strained; the lattice spacing of surface normal (111) planes near the surface was larger than that of the bulk. Detailed strain profiles along the depth direction were successfully estimated using a curve-fitting method based on Darwin's dynamical diffraction theory. Comparing the shapes of resultant strain profiles, we found that a strain evolution rapidly occurred within a depth of ∼300 nm at fluence values between 1x10 13 and 5x10 13 /cm 2 . This indicates that formation of the complex defects progressed near the surface when the fluence value went beyond a critical value between 1x10 13 and 5x10 13 /cm 2 and the defects brought a large strain to the substrate.

  9. Compositional, structural, and optical changes of polyimide implanted by 1.0 MeV Ni+ ions

    Czech Academy of Sciences Publication Activity Database

    Mikšová, Romana; Macková, Anna; Pupíková, Hana; Malinský, Petr; Slepička, P.; Švorčík, V.

    2017-01-01

    Roč. 406, SEP (2017), s. 199-204 ISSN 0168-583X R&D Projects: GA MŠk LM2015056; GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:61389005 Keywords : Ni ion implantation * polyimide * polymer degradation Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders OBOR OECD: Nuclear physics Impact factor: 1.109, year: 2016

  10. Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn{sub 0.85}Mg{sub 0.15}O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Saha, S.; Nagar, S.; Chakrabarti, S., E-mail: subho@ee.iitb.ac.in [Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)

    2014-08-11

    ZnMgO thin films deposited on 〈100〉 Si substrates by RF sputtering were annealed at 800, 900, and 1000 °C after phosphorus plasma immersion ion implantation. X-ray diffraction spectra confirmed the presence of 〈101{sup ¯}0〉 and 〈101{sup ¯}3〉 peaks for all the samples. However, in case of the annealed samples, the 〈0002〉 peak was also observed. Scanning electron microscopy images revealed the variation in surface morphology caused by phosphorus implantation. Implanted and non-implanted samples were compared to examine the effects of phosphorus implantation on the optical properties of ZnMgO. Optical characteristics were investigated by low-temperature (15 K) photoluminescence experiments. Inelastic exciton–exciton scattering and localized, and delocalized excitonic peaks appeared at 3.377, 3.42, and 3.45 eV, respectively, revealing the excitonic effect resulting from phosphorus implantation. This result is important because inelastic exciton–exciton scattering leads to nonlinear emission, which can improve the performance of many optoelectronic devices.

  11. Leaky mode suppression in planar optical waveguides written in Er:TeO{sub 2}–WO{sub 3} glass and CaF{sub 2} crystal via double energy implantation with MeV N{sup +} ions

    Energy Technology Data Exchange (ETDEWEB)

    Bányász, I., E-mail: banyasz@sunserv.kfki.hu [Department of Crystal Physics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O.B. 49, H-1525 Budapest (Hungary); Zolnai, Z.; Fried, M. [Research Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungarian Academy of Sciences, P.O.B. 49, Budapest H-1525 (Hungary); Berneschi, S. [MDF-Lab, “Nello Carrara” Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); “Enrico Fermi” Center for Study and Research, Piazza del Viminale 2, 00184 Roma (Italy); Pelli, S.; Nunzi-Conti, G. [MDF-Lab, “Nello Carrara” Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy)

    2014-05-01

    Ion implantation proved to be an universal technique for producing waveguides in most optical materials. Tellurite glasses are good hosts of rare-earth elements for the development of fibre and integrated optical amplifiers and lasers covering all the main telecommunication bands. Er{sup 3+}-doped tellurite glasses are good candidates for the fabrication of broadband amplifiers in wavelength division multiplexing around 1.55 μm, as they exhibit large stimulated cross sections and broad emission bandwidth. Calcium fluoride is an excellent optical material, due to its perfect optical characteristics from UV wavelengths up to near IR. It has become a promising laser host material (doped with rare earth elements). Ion implantation was also applied to optical waveguide fabrication in CaF{sub 2} and other halide crystals. In the present work first single-energy implantations at 3.5 MeV at various fluences were applied. Waveguide operation up to 1.5 μm was observed in Er:Te glass, and up to 980 nm in CaF{sub 2}. Then double-energy implantations at a fixed upper energy of 3.5 MeV and lower energies between 2.5 and 3.2 MeV were performed to suppress leaky modes by increasing barrier width.

  12. Application of neutron activation analysis for the determination of implantation profiles of phosphorus in semiconductor grade silicon

    International Nuclear Information System (INIS)

    Jaskolska, H.; Rowinska, L.; Walis, L.

    1977-01-01

    A method for the determination of concentration profiles of phosphorus in silicon by neutron activation has been elaborated. It is based on the previously described extraction methods, in which phosphorus is extracted as phosphomolybdic complex with isoamyl alcohol. It was suitably modified and Au and Ta holdback carriers were used in order to diminish the extraction of these elements together with phosphorus. The method permits to achieve decontamination factors of 10 2 -10 3 for the elements found in the Si plates examined. The yield of phosphorus separation is nearly constant and amounts to 84%. Layers are removed from the annealed plate by anodic oxidation and by dissolving the oxide formed on the surface in diluted hydrofluoric acid. The thickness of the removed layers is determined from previously prepared calibration curves. The lower limit of determination is of the order 10 -11 g P. Two groups of errors have been discussed. The suitability of autoradiography to the determination of concentration profiles has been demonstrated. Some applications of the method are suggested. (T.G.)

  13. RBS studies of the lattice damage caused by 1 MeV Si+ implantation into Al0.3Ga0.7As/GaAs superlattices at elevated temperature

    International Nuclear Information System (INIS)

    Xu Tianbing; Zhu Peiran; Zhou Junsi; Li Daiqing; Gong Baoan; Wan Ya; Mu Shanming; Zhao Qingtai; Wang Zhonglie

    1994-01-01

    The lattice damage accumulation in GaAs and Al 0.3 Ga 0.7 As/GaAs superlattices by 1 MeV Si + irradiation at room temperature and 350 C has been studied. For irradiations at 350 C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 x 10 15 Si/cm 2 for GaAs, and is 5 x 10 15 Si/cm 2 for Al 0.8 Ga 0.7 As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350 C. The damage accumulation rate for 1 MeV Si ion implantation in Al 0.3 Ga 0.7 As/GaAs superlattice is less than that in GaAs. (orig.)

  14. High energy P implants in silicon

    International Nuclear Information System (INIS)

    Raineri, V.; Cacciato, A.; Benyaich, F.; Priolo, F.; Rimini, E.; Galvagno, G.; Capizzi, S.

    1992-01-01

    Phosphorus ions in the energy range 0.25-1 MeV and in the dose range 2x10 13 -1x10 15 P/cm 2 were implanted into (100) Si single crystal at different tilt angles. In particular channeling and random conditions were investigated. For comparison some implants were performed on samples with a 2 μm thick surface amorphous layer. Chemical concentration P profiles were obtained by secondary ion mass spectrometry. Carrier concentration and mobility profile measurements were carried out by sheet resistance and Hall measurements on implanted van der Pauw patterns. Carrier concentration profiles were also obtained by spreading resistance (SR) measurements. The damage in the as-implanted samples was determined by backscattering and channeling spectrometry (RBS) as a function of the dose and implantation energy. Comparison of random implants in crystal with implants in amorphous layers shows that in the first case it is impossible to completely avoid the channeling tail. In the implants performed under channeling conditions at low doses the P profiles are flat over more than 2 μm thick layers. Furthermore, by increasing the implanted dose, the shape of the profiles dramatically changes due to the dechanneling caused by the crystal disorder. The data are discussed and compared with Monte Carlo simulations using the MARLOWE code. A simple description of the electronic energy loss provides an excellent agreement between the calculated and experimental profiles. (orig.)

  15. High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen

    International Nuclear Information System (INIS)

    Frey, L.; Bogen, S.; Gong, L.; Jung, W.; Ryssel, H.; Gyulai, J.

    1992-01-01

    A new high energy ion implanter for research and development in semiconductor technology was put into operation at the Fraunhofer Institute in Erlangen. The system is used for generation of ion beams in the energy range from 100 keV to more than 6 MeV with currents up to 100 μA. A large variety of ion species can be implanted into silicon wafers with diameters up to 200 mm (with cassette-to-cassette loading up to 150 mm). The performance characteristics of the system are described with special emphasis on the end stations. In a first series of experiments, the range distributions of boron, phosphorus and arsenic in silicon have been measured for energies from 0.2 MeV to 10 MeV in order to get a data set for future applications. The profiles are compared to simulated data. First experimental results on lateral distribution of the dopant species are presented. (orig.)

  16. Deep ion implantation for bipolar silicon devices; investigations into the use of the third dimension

    International Nuclear Information System (INIS)

    Mouthaan, A.J.

    1986-01-01

    This thesis covers various aspects of the use of deep ion implantations in digital bipolar circuits. It starts with the implications of the use of deep ion implantations for numerical process, device and circuit simulation. It shows the use of 1MeV boron and phosphorus implantations in the realization of a fully vertical IIL, here named Buried Injector Logic, which can also be used as static and dynamic memory device in several different configurations. The author presents a combined MOS-bipolar device, called the Charge Injection Device as a dynamic memory cell. Finally, deep ion implantations are used to realize a stack of photovoltaic cells that produces a multiple of the open circuit voltage of one photodiode. (Auth.)

  17. Microbeam line of MeV heavy ions for materials modification and in-situ analysis

    International Nuclear Information System (INIS)

    Horino, Yuji; Chayahara, Akiyoshi; Kiuchi, Masato; Fujii, Kanenaga; Satoh, Mamoru; Takai, Mikio.

    1990-01-01

    A microbeam line for MeV heavy ions of almost any element has been developed for microion-beam processing such as maskless MeV ion implantation and its in-situ analysis. Beam spot sizes of 4.0 μm x 4.0 μm for 3 MeV C 2+ and 9.6 μm x 4.8 μm for 1.8 MeV Au 2+ beams were obtained. Maskless MeV gold ion implantation to a silicon substrate and in-situ microanalysis before and after ion implantation were demonstrated. (author)

  18. The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphire

    Science.gov (United States)

    Pisciotta, B. P.; Gross, C.

    1976-01-01

    Partial annealing of damage to the crystal lattice during ion implantation reduces the temperature coefficient of resistivity of ion-implanted silicon, while facilitating controlled doping. Reliance on this method for temperature compensation of the resistivity and strain-gage factor is discussed. Implantation conditions and annealing conditions are detailed. The gage factor and its temperature variation are not drastically affected by crystal damage for some crystal orientations. A model is proposed to account for the effects of electron damage on the temperature dependence of resistivity and on silicon piezoresistance. The results are applicable to the design of silicon-on-sapphire strain gages with high gage factors.

  19. Effects of phosphorus, silicon and sulphur on microstructural evolution in austenitic stainless steels during electron irradiation

    International Nuclear Information System (INIS)

    Fukuya, K.; Nakahigashi, S.; Ozaki, S.; Shima, S.

    1991-01-01

    Fe-18Cr-9Ni-1,5Mn austenitic alloys containing phosphorus, silicon and sulphur were irradiated by 1 MeV electrons at 573-773 K. Phosphorus increased the interstitial loop nucleation and decreased the void swelling by increasing void number density and suppressing void growth. Silicon had a similar effect to phosphorus but its effect was weaker than phosphorus. Sulphur enhanced void swelling through increasing the void density. Nickel enrichment at grain boundaries was suppressed only in the alloy containing phosphorus. These phosphorus effects may be explained by a strong interaction with interstitials resulting in a high density of sinks for point defects. (orig.)

  20. High energy ion implantation

    International Nuclear Information System (INIS)

    Ziegler, J.F.

    1985-01-01

    High energy ion implantation offers the oppertunity for unique structures in semiconductor processing. The unusual physical properties of such implantations are discussed as well as the special problems in masking and damage annealing. A review is made of proposed circuit structures which involve deep implantation. Examples are: deep buried bipolar collectors fabricated without epitaxy, barrier layers to reduce FET memory sensitivity to soft-fails, CMOS isolation well structures, MeV implantation for customization and correction of completed circuits, and graded reach-throughs to deep active device components. (orig.)

  1. Photoluminescence study of novel phosphorus-doped ZnO nanotetrapods synthesized by chemical vapour deposition

    International Nuclear Information System (INIS)

    Yu Dongqi; Hu Lizhong; Qiao Shuangshuang; Zhang Heqiu; Fu Qiang; Chen Xi; Sun Kaitong; Len, Song-En Andy; Len, L K

    2009-01-01

    Novel phosphorus-doped and undoped single crystal ZnO nanotetrapods were fabricated on sapphire by a simple chemical vapour deposition method, using phosphorus pentoxide (P 2 O 5 ) as the dopant source. The optical properties of the samples were investigated by photoluminescence (PL) spectroscopy. Low-temperature PL measurements of phosphorus-doped and undoped samples were compared, and the results indicated a decrease in deep level defects due to the incorporation of a phosphorus acceptor dopant. The PL spectrum of the phosphorus-doped sample at 10 K exhibited several acceptor-bound exciton related emission peaks. The effect of phosphorus doping on the optical characteristics of the samples was investigated by excitation intensity and temperature dependent PL spectra. The acceptor-binding energies of the phosphorus dopant were estimated to be about 120 meV, in good agreement with the corresponding theoretical and experimental values in phosphorus-doped ZnO films and nanowires.

  2. Substoichiometric extraction of phosphorus

    International Nuclear Information System (INIS)

    Shigematsu, T.; Kudo, K.

    1981-01-01

    A study of the substoichiometric extraction of phosphorus is described. Phosphorus was extracted in the form of ternary compounds such as ammonium phosphomolybdate, 8-hydroxyquinolinium phosphomolybdate, tetraphenylarsonium phosphomolybdate and tri-n-octylamine phosphomolybdate. Consequently, phosphorus was extracted substoichiometrically by the addition of a substoichiometric amount of molybdenum for the four phosphomolybdate compounds. On the other hand, phosphorus could be separated substoichiometrically with a substoichiometric amount of tetraphenylarsonium chloride or tri-n-octylamine. Stoichiometric ratios of these ternary compounds obtained substoichiometrically were 1:12:3 for phosphorus, molybdenum and organic reagent. The applicability of these compounds to phosphorus determination is also discussed. (author)

  3. Phosphorus blood test

    Science.gov (United States)

    ... page: //medlineplus.gov/ency/article/003478.htm Phosphorus blood test To use the sharing features on this page, please enable JavaScript. The phosphorus blood test measures the amount of phosphate in the blood. ...

  4. Secondary poisoning of kestrels by white phosphorus

    Science.gov (United States)

    Sparling, D.W.; Federoff, N.E.

    1997-01-01

    Since 1982, extensive waterfowl mortality due to white phosphorus (P4) has been observed at Eagle River Flats, a tidal marsh near Anchorage, Alaska. Ducks and swans that ingest P4 pellets become lethargic and may display severe convulsions. Intoxicated waterfowl attract raptors and gulls that feed on dead or dying birds. To determine if avian predators can be affected by secondary poisoning, we fed American kestrels (Falco sparverius) 10-day-old domestic chickens that had been dosed with white phosphorus. Eight of 15 kestrels fed intact chicks with a pellet of P4 implanted in their crops died within seven days. Three of 15 kestrels fed chicks that had their upper digestive tracts removed to eliminate any pellets of white phosphorus also died. Hematocrit and hemoglobin in kestrels decreased whereas lactate dehydrogenaseL, glucose, and alanine aminotransferase levels in plasma increased with exposure to contaminated chicks. Histological examination of liver and kidneys showed that the incidence and severity of lesions increased when kestrels were fed contaminated chicks. White phosphorus residues were measurable in 87% of the kestrels dying on study and 20% of the survivors. This study shows that raptors can become intoxicated either by ingesting portions of digestive tracts containing white phosphorus pellets or by consuming tissues of P4 contaminated prey.

  5. Charged particle activation analysis of phosphorus in biological materials

    International Nuclear Information System (INIS)

    Masumoto, K.; Yagi, M.

    1983-01-01

    Charged particle activation analysis of phosphorus in biological materials using the 31 P(α,n) sup(34m)Cl reaction has been studied. Since sup(34m)Cl is also produced by the 32 S(α,pn) and the 35 Cl(α,α'n) reactions, the thick-target yield curves on phosphorus, sulfur and chlorine were determined in order to choose the optimum irradiation conditions. As a result, it was found that the activation analysis for phosphorus without interferences from sulfur and chlorine is possible by bombarding with less than 17 MeV alphas. The applicability of this method to biological samples was then examined by irradiating several standard reference materials. It was confirmed that phosphorus can readily be determined at the detection limit of 1μg free from interferences due to the matrix elements. (author)

  6. Phosphorus poisoning in waterfowl

    Science.gov (United States)

    Coburn, D.R.; DeWitt, J.B.; Derby, J.V.; Ediger, E.

    1950-01-01

    Black ducks and mallards were found to be highly susceptible to phosphorus poisoning. 3 mg. of white phosphorus per kg. of body weight given in a single dose resulted in death of a black duck in 6 hours. Pathologic changes in both acute and chronic poisoning were studied. Data are presented showing that diagnosis can be made accurately by chemical analysis of stored tissues in cases of phosphorus poisoning.

  7. 0,01-5 MeV heavy ion accelerators

    International Nuclear Information System (INIS)

    Golubev, V.P.; Ivanov, A.S.; Nikiforov, S.A.; Svin'in, M.P.; Tarvid, G.V.; Troshikhin, A.G.; Fedotov, M.T.

    1983-01-01

    The results of development of an accelerating complex on the base of the UP-2-1 heavy ion charge exchange accelerator and IMPLANT-500 high-voltage heavy ion accelerator are given. The accelerating complex provides overlapping of the 0.01 MeV to 5 MeV energy range at accelerated beam currents of 10 -3 -10 -6 A order. The structural features of accelerators and their basic units and systems are considered. The UP-2-1 accelerator is designed for researches in the field of experimental physics and applied problem solutions. The IMPLANT-500 accelerator is designed for commercial ion-beam facilities with closed loop of silicon plate treatment

  8. Phosphorus dendrimers for nanomedicine.

    Science.gov (United States)

    Caminade, Anne-Marie

    2017-08-31

    From biomaterials to imaging, and from drug delivery to drugs by themselves, phosphorus-containing dendrimers offer a large palette of biological properties, depending essentially on their types of terminal functions. The most salient examples of phosphorus dendrimers used for the elaboration of bio-chips and of supports for cell cultures, for imaging biological events, and for carrying and delivering drugs or biomacromolecules are presented in this feature article. Several phosphorus dendrimers can be considered also as drugs per se (by themselves) in particular to fight against cancers, neurodegenerative diseases, and inflammation, both in vitro and in vivo. Toxicity assays are also reported.

  9. Characterization of diamond amorphized by ion implantation

    International Nuclear Information System (INIS)

    Allen, W.R.; Lee, E.H.

    1992-01-01

    Single crystal diamond has been implanted at 1 MeV with 2 x 10 20 Ar/m 2 . Rutherford backscattering spectrometry in a channeled geometry revealed a broad amorphized region underlying a thin, partially crystalline layer. Raman spectroscopy disclosed modifications in the bonding characteristic of the appearance of non-diamond carbon. The complementary nature of the two analysis techniques is demonstrated. The Knoop hardness of the implanted diamond was reduced by implantation

  10. Isotopically exchangeable phosphorus

    International Nuclear Information System (INIS)

    Barbaro, N.O.

    1984-01-01

    A critique revision of isotope dilution is presented. The concepts and use of exchangeable phosphorus, the phosphate adsorption, the kinetics of isotopic exchange and the equilibrium time in soils are discussed. (M.A.C.) [pt

  11. Ion implantation

    International Nuclear Information System (INIS)

    Dearnaley, Geoffrey

    1975-01-01

    First, ion implantation in semiconductors is discussed: ion penetration, annealing of damage, gettering, ion implanted semiconductor devices, equipement requirements for ion implantation. The importance of channeling for ion implantation is studied. Then, some applications of ion implantation in metals are presented: study of the corrosion of metals and alloys; influence or ion implantation on the surface-friction and wear properties of metals; hyperfine interactions in implanted metals

  12. Phosphorus determination in bone samples by activation analysis using fast neutrons

    International Nuclear Information System (INIS)

    Madi Filho, T.; Cunha, I.I.L.

    1992-01-01

    In this report, the phosphorus determination in animal bone samples was made by means of the irradiation of samples using 14 MeV neutron generator (Van de Graaff accelerator). Induced radiation in irradiated material was measured using a NaI(Tl) detector. The method was tested in a IAEA certified standard, being obtained the values of 15,48% and 15,75%. The content of phosphorus was obtained by using two different calculating methods. Based on the experiments performed it was possible to establish a method of phosphorus analysis in bone using the Van de Graaff accelerator. (author)

  13. The role of phosphorus in the irradiation embrittlement of PWR pressure vessel steels

    International Nuclear Information System (INIS)

    Jones, R.B.; Buswell, J.T.

    1987-02-01

    An analysis has been performed of the influence of phosphorus on post-irradiation materials properties and microstructures determined on a variety of PWR steels and variants following exposure to MTR or reactor surveillance irradiations to doses not exceeding 7 x 10 19 n.cm -2 (E>1.0MeV) at 250-290 0 C. The irradiation-induced shifts in impact transition temperature, matrix hardening and the relative small angle neutron scattering response were found to rise most rapidly with increasing phosphorus when the copper content of the steel was 0.03 w/o. The sensitivity of the changes in mechanical properties to phosphorus content decreased as the copper content was increased. At copper levels typical of modern PWR steel manufacture (Cu 3 P) produced by the irradiation induced segregation of phosphorus to defect sinks and the depletion of phosphorus in solid solution as detected by high sensitivity electron microscopy and other analytical techniques. At higher levels of copper (approx. 0.3 w/o) the effect of phosphorus on properties was reduced by a factor of three due to the observed incorporation of phosphorus into the small copper precipitates formed during irradiation. Grain boundary embrittlement by phosphorus under irradiation is not thought to be important but further evidence concerning the post-irradiation fracture mode and the development of the deleterious influence of phosphorus with irradiation dose is required for a comprehensive understanding of its action. Some suggestions for future work are made. (author)

  14. Organic chemistry of elemental phosphorus

    International Nuclear Information System (INIS)

    Milyukov, V A; Budnikova, Yulia H; Sinyashin, Oleg G

    2005-01-01

    The principal achievements and the modern trends in the development of the chemistry of elemental phosphorus are analysed, described systematically and generalised. The possibilities and advantages of the preparation of organophosphorus compounds directly from white phosphorus are demonstrated. Attention is focused on the activation and transformation of elemental phosphorus in the coordination sphere of transition metal complexes. The mechanisms of the reactions of white phosphorus with nucleophilic and electrophilic reagents are discussed. Electrochemical approaches to the synthesis of organic phosphorus derivatives based on white phosphorus are considered.

  15. phosphorus sorption capacity as a guide for phosphorus availability

    African Journals Online (AJOL)

    Prof. Adipala Ekwamu

    drained, light yellowish brown, loamy sand ... Dongola 2 Akked series: Deep, dark grayish brown, clay ... energy. Statistical analysis. Data collected were statistically analysed using ANOVA of MStatc ... phosphorus sorbed versus phosphorus.

  16. Multi-dimensional microanalysis of masklessly implanted atoms using focused heavy ion beam

    International Nuclear Information System (INIS)

    Mokuno, Yoshiaki; Iiorino, Yuji; Chayahara, Akiyoshi; Kiuchi, Masato; Fujii, Kanenaga; Satou, Mamoru

    1992-01-01

    Multi-dimensional structure fabricated by maskless MeV gold implantation in silicon wafer was analyzed by 3 MeV carbon ion microprobe using a microbeam line developed at GIRIO. The minimum line width of the implanted region was estimated to be about 5 μm. The advantages of heavy ions for microanalysis were demonstrated. (author)

  17. Preparation of phosphorus targets using the compound phosphorus nitride

    International Nuclear Information System (INIS)

    Maier-Komor, P.

    1987-01-01

    Commercially available phosphorus nitride (P 3 N 5 ) shows a high oxygen content. Nevertheless, this material is attractive for use as phosphorus targets in experiments where red phosphorus would disappear due to its high vapor pressure and where a metal partner in the phosphide must be excluded due to its high atomic number. Methods are described to produce phosphorus nitride targets by vacuum evaporation condensation. (orig.)

  18. Evaluation of Uncertainties in the Determination of Phosphorus by RNAA

    International Nuclear Information System (INIS)

    Rick L. Paul

    2000-01-01

    A radiochemical neutron activation analysis (RNAA) procedure for the determination of phosphorus in metals and other materials has been developed and critically evaluated. Uncertainties evaluated as type A include those arising from measurement replication, yield determination, neutron self-shielding, irradiation geometry, measurement of the quantity for concentration normalization (sample mass, area, etc.), and analysis of standards. Uncertainties evaluated as type B include those arising from beta contamination corrections, beta decay curve fitting, and beta self-absorption corrections. The evaluation of uncertainties in the determination of phosphorus is illustrated for three different materials in Table I. The metal standard reference materials (SRMs) 2175 and 861 were analyzed for value assignment of phosphorus; implanted silicon was analyzed to evaluate the technique for certification of phosphorus. The most significant difference in the error evaluation of the three materials lies in the type B uncertainties. The relatively uncomplicated matrix of the high-purity silicon allows virtually complete purification of phosphorus from other beta emitters; hence, minimal contamination correction is needed. Furthermore, because the chemistry is less rigorous, the carrier yield is more reproducible, and self-absorption corrections are less significant. Improvements in the chemical purification procedures for phosphorus in complex matrices will decrease the type B uncertainties for all samples. Uncertainties in the determination of carrier yield, the most significant type A error in the analysis of the silicon, also need to be evaluated more rigorously and minimized in the future

  19. III. Quantitative aspects of phosphorus excretionin ruminants

    OpenAIRE

    Bravo , David; Sauvant , Daniel; Bogaert , Catherine; Meschy , François

    2003-01-01

    International audience; Ruminant phosphorus excretion and metabolism were studied through a database. Faecal endogenous phosphorus is the main pathway of phosphorus excretion and averages 0.85 of total faecal phosphorus. The remaining 0.15 is unabsorbed dietary phosphorus. Faecal endogenous phosphorus is mainly unabsorbed phosphorus, with saliva being the major source, and is correlated to factors influencing saliva secretion (DM intake, physical dietary characteristics and dietary phosphorus...

  20. Traps for phosphorus adsorption

    International Nuclear Information System (INIS)

    Montoya, Nawer D; Villegas, Wilson E; Rodriguez, Lino M; Taborda, Nelson; Montes de C, Consuelo

    2001-01-01

    Several AL 2 O 3 supported oxides such as: NiO, CuO, Co 2 O 3 BaO, CeO 2 and ZnO were investigated for phosphorus adsorption. Zno/y-Al 2 O 3 exhibited the highest phosphorus adsorption capacity. However, since it diminishes the activity of to the reaction mixture it should be located upstream of the NoX catalyst, i.e. 0,3% Pd-H-MOR, in order to protect it against p poisoning. The treatment procedure with citric acid was effective for the removal of more than 70% phosphorus from the adsorbent, ZnO/y-Al 2 O 3

  1. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  2. Chromatography of phosphorus oxoacids

    International Nuclear Information System (INIS)

    Ohashi, S.

    1975-01-01

    The present state of studies on the chromatographic separation of phosphorus oxoacids is surveyed. In this paper, chromatographic techniques are divided into four groups, i.e. paper and thin-layer chromatography, paper electrophoresis, ion-exchange chromatography, and gel chromatography. The separation mechanisms and characteristics for these chromatographic methods are discussed and some examples for the separation of phosphorus oxoacids are described. As examples of the application of ion-exchange and gel chromatography, studies on the hot atom chemistry of 32 P in solid inorganic phosphates and those on the substitution reactions between diphosphonate (diphosphite) and polyphosphates are reported. (author)

  3. High energy ion implantation for IC processing

    International Nuclear Information System (INIS)

    Oosterhoff, S.

    1986-01-01

    In this thesis the results of fundamental research on high energy ion implantation in silicon are presented and discussed. The implantations have been carried out with the 500 kV HVEE ion implantation machine, that was acquired in 1981 by the IC technology and Electronics group at Twente University of Technology. The damage and anneal behaviour of 1 MeV boron implantations to a dose of 10 13 /cm 2 have been investigated as a function of anneal temperature by sheet resistance, Hall and noise measurements. (Auth.)

  4. Phosphorus in Agriculture : 100 % Zero

    NARCIS (Netherlands)

    Schnug, Ewald; De Kok, Luit J.

    2016-01-01

    Phosphorus is essential for all living organisms, reserves in geogenic deposits are finite, and phosphorus nutrient mining and oversupply are common phenomenons on agricultural soils. Only if the agricultural phosphorus cycle can be closed and the fertilized nutrient been utilized completely,

  5. Transverse microanalysis of high energy Ion implants

    Energy Technology Data Exchange (ETDEWEB)

    Dooley, S P; Jamieson, D N; Nugent, K W; Prawer, S [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.

  6. Transverse microanalysis of high energy Ion implants

    Energy Technology Data Exchange (ETDEWEB)

    Dooley, S.P.; Jamieson, D.N.; Nugent, K.W.; Prawer, S. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.

  7. Phosphorus in agricultural soils:

    NARCIS (Netherlands)

    Ringeval, Bruno; Augusto, Laurent; Monod, Hervé; Apeldoorn, van D.F.; Bouwman, A.F.; Yang, X.; Achat, D.L.; Chini, L.P.; Oost, van K.; Guenet, Bertrand; Wang, R.; Decharme, B.; Nesme, T.; Pellerin, S.

    2017-01-01

    Phosphorus (P) availability in soils limits crop yields in many regions of the World, while excess of soil P triggers aquatic eutrophication in other regions. Numerous processes drive the global spatial distribution of P in agricultural soils, but their relative roles remain unclear. Here, we

  8. Determination of phosphorus distribution in the region of a SiO2-Si interface by substoichiometric analysis

    International Nuclear Information System (INIS)

    Shigematsu, T.; Yonezawa, H.

    1994-01-01

    A simplified method for the substoichiometric analysis of phosphorus has been developed and applied to determine the concentration distribution of phosphorus in the region of a SiO 2 -Si interface in order to explain why phosphorus is lost from the ion-implanted silicon surface throughout the oxidation and oxide removal processes. It is revealed that phosphorus piles up on the SiO 2 side at the interface by the thermal oxidation of silicon surface and is removed with the oxide by wet etching and with the resulting silicon by RCA cleaning. This results in a total loss of ion-implanted phosphorus of 3.5%. (author) 11 refs.; 2 figs.; 3 tabs

  9. Low dose monitoring by double implant technique in IC fabrication

    International Nuclear Information System (INIS)

    Ahmad, I.B.; Weidemann, J.

    1995-01-01

    The utilisation of low dose implant monitoring (using Boron) in a manufacturing line has been discussed. The utilisation of phosphorus ions as the second implant dose were also studied as comparison. The technique relies on the fact that the sheet resistant of doped layer will increase significantly when damaged by relatively low implant dose. The technique is very sensitive and applicable for adjusting the channel dose so that an accurate threshold voltage in MOS device could be achieved

  10. Substoichiometric determination of phosphorus

    International Nuclear Information System (INIS)

    Shigematsu, T.; Kudo, K.

    1981-01-01

    Phosphorus in orchard leaves (NBS SRM-1571) and spinach (SRM-1570) was determined by various substoichiometric analytical methods such as the direct method, Gravshchenko's method and the method of carrier amount variation. All samples were labelled with 32 P radioisotope. The data obtained by the method of carrier amount variation were also treated by the method of least squares instead of De Voe's method. Phosphorus concentration in orchard leaves was 0.206+-0.011% by the direct method, 0.219+-0.011% by Gravshchenko's method, 0.211+-0.011% by the method of carrier amount variation and 0.207+-0.007% by the method of least squares, respectively. These values agree with the value reported by NBS (0.21+-0.01%). Furthermore, these concentrations obtained by various substoichiometric methods were compared with those by radioactivation reported in a previous paper. (author)

  11. Annealing of ion implanted silicon

    International Nuclear Information System (INIS)

    Chivers, D.; Smith, B.J.; Stephen, J.; Fisher, M.

    1980-09-01

    The newer uses of ion implantation require a higher dose rate. This has led to the introduction of high beam current implanters; the wafers move in front of a stationary beam to give a scanning effect. This can lead to non-uniform heating of the wafer. Variations in the sheet resistance of the layers can be very non-uniform following thermal annealing. Non-uniformity in the effective doping both over a single wafer and from one wafer to another, can affect the usefulness of ion implantation in high dose rate applications. Experiments to determine the extent of non-uniformity in sheet resistance, and to see if it is correlated to the annealing scheme have been carried out. Details of the implantation parameters are given. It was found that best results were obtained when layers were annealed at the maximum possible temperature. For arsenic, phosphorus and antimony layers, improvements were observed up to 1200 0 C and boron up to 950 0 C. Usually, it is best to heat the layer directly to the maximum temperature to produce the most uniform layer; with phosphorus layers however it is better to pre-heat to 1050 0 C. (U.K.)

  12. Phosphorus Transport in Rivers.

    Science.gov (United States)

    1978-11-01

    be attributed to excessive nutrient inputs to the lake. These nutrients sti- mulate the phytoplankton (algae) growth which yields excess growth. The...phosphorus in relation to the restoration of Lake Erie. The various computational techniques presented herein aid in the understanding of total...as caused by the absorption on clay materials and by assimilation by periphyton . Other investigators have found correlations between flow and other

  13. Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition

    International Nuclear Information System (INIS)

    Cao, B Q; Lorenz, M; Rahm, A; Wenckstern, H von; Czekalla, C; Lenzner, J; Benndorf, G; Grundmann, M

    2007-01-01

    Phosphorus-doped ZnO (ZnO:P) nanowires were successfully prepared by a novel high-pressure pulsed-laser deposition process using phosphorus pentoxide as the dopant source. Detailed cathodoluminescence studies of single ZnO:P nanowires revealed characteristic phosphorus acceptor-related peaks: neutral acceptor-bound exciton emission (A 0 , X, 3.356 eV), free-to-neutral-acceptor emission (e, A 0 , 3.314 eV), and donor-to-acceptor pair emission (DAP, ∼3.24 and ∼3.04 eV). This means that stable acceptor levels with a binding energy of about 122 meV have been induced in the nanowires by phosphorus doping. Moreover, the induced acceptors are distributed homogeneously along the doped nanowires

  14. Electrical properties of the regrown implantation-induced amorphous layer on (1 1-bar 0 0)- and (1 1 2-bar 0)-oriented 6H-SiC

    International Nuclear Information System (INIS)

    Nakamura, Tomonori; Tanabe, Hitoshi; Hitomi, Takeshi; Satoh, Masataka

    2003-01-01

    In the (1 1-bar 0 0) and (1 1 2-bar 0)-oriented 6H-SiC, the electrical properties and activation process of the implanted phosphorus in the layer regrown from the implantation-induced amorphous layer are investigated by means of Hall effect measurement and Rutherford backscattering spectrometry. The samples are implanted by 60 keV phosphorus ions at room temperature with doses of 3 x 10 15 and 1 x 10 15 cm -2 to form implantation-induced amorphous layer and the partially disordered implant-layer, respectively. The implanted phosphorus in the implantation-induced amorphous layer can be electrically activated by annealing at 1000 deg. C. The electrical activity for the case of the implantation-induced amorphous layer (ratio of sheet carrier concentration to ion dose) is 2-3 times larger than that for the case of the partially disordered implant-layer for the annealing temperature of 1500 deg. C

  15. Allotropes of Phosphorus with Remarkable Stability and Intrinsic Piezoelectricity

    Science.gov (United States)

    Li, Zhenqing; He, Chaoyu; Ouyang, Tao; Zhang, Chunxiao; Tang, Chao; Römer, Rudolf A.; Zhong, Jianxin

    2018-04-01

    We construct a class of two-dimensional (2D) phosphorus allotropes by assembling a previously proposed ultrathin metastable phosphorus nanotube into planar structures in different stacking orientations. Based on first-principles methods, the structures, stabilities, and fundamental electronic properties of these allotropes are systematically investigated. Our results show that these 2D van der Waals phosphorene allotropes possess remarkable stabilities due to the strong intertube van der Waals interactions, which cause an energy release of about 30 - 70 meV /atom , depending on their stacking details. Most of them are confirmed to be energetically more favorable than the experimentally viable α -P and β -P . Three of them, showing a relatively higher probability of being synthesized in the future, are further confirmed to be dynamically stable semiconductors with strain-tunable band gaps and intrinsic piezoelectricity, which may have potential applications in nanosized sensors, piezotronics, and energy harvesting in portable electronic nanodevices.

  16. Preparation of air-settled, roll-thinned phosphorus targets

    CERN Document Server

    Lozowski, W R

    1999-01-01

    Red sup 3 sup 1 P targets of 2.6 and 2.9 mg/cm sup 2+-0.1 mg/cm sup 2 with 1-cmx2-cm side dimensions were prepared for a nuclear mass measurement which required good thickness uniformity. The thinner target, with 50 mu g/cm sup 2 of gold flashed on both surfaces, withstood a 173-MeV alpha beam of 175 nA for 18 h. Adaptations will be described for an Indiana University Cyclotron Facility air-settling method used to distribute phosphorus powder, as well as the methods developed for subsequent pressing, roll thinning, and dry release to obtain self-supporting targets. An envelope of gold foil, in contact with the phosphorus during each step, was instrumental in the process.

  17. Cochlear Implants

    Science.gov (United States)

    ... implant, including: • How long a person has been deaf, •The number of surviving auditory nerve fibers, and • ... Implant, Severe Sensoryneurial Hearing Loss Get Involved Professional Development Practice Management ENT Careers Marketplace Privacy Policy Terms ...

  18. Sustainable Phosphorus Measures: Strategies and Technologies for Achieving Phosphorus Security

    Directory of Open Access Journals (Sweden)

    Stuart White

    2013-01-01

    Full Text Available Phosphorus underpins the world’s food systems by ensuring soil fertility, maximising crop yields, supporting farmer livelihoods and ultimately food security. Yet increasing concerns around long-term availability and accessibility of the world’s main source of phosphorus—phosphate rock, means there is a need to investigate sustainable measures to buffer the world’s food systems against the long and short-term impacts of global phosphorus scarcity. While the timeline of phosphorus scarcity is contested, there is consensus that more efficient use and recycling of phosphorus is required. While the agricultural sector will be crucial in achieving this, sustainable phosphorus measures in sectors upstream and downstream of agriculture from mine to fork will also need to be addressed. This paper presents a comprehensive classification of all potential phosphorus supply- and demand-side measures to meet long-term phosphorus needs for food production. Examples range from increasing efficiency in the agricultural and mining sector, to technologies for recovering phosphorus from urine and food waste. Such measures are often undertaken in isolation from one another rather than linked in an integrated strategy. This integrated approach will enable scientists and policy-makers to take a systematic approach when identifying potential sustainable phosphorus measures. If a systematic approach is not taken, there is a risk of inappropriate investment in research and implementation of technologies and that will not ultimately ensure sufficient access to phosphorus to produce food in the future. The paper concludes by introducing a framework to assess and compare sustainable phosphorus measures and to determine the least cost options in a given context.

  19. Phosphorus containing sintered alloys (review)

    International Nuclear Information System (INIS)

    Muchnik, S.V.

    1984-01-01

    Phosphorus additives are considered for their effect on the properties of sintered alloys of different applications: structural, antifriction, friction, magnetic, hard, superhard, heavy etc. Data are presented on compositions and properties of phosphorus-containing materials produced by the powder metallurgy method. Phosphorus is shown to be an effective activator of sintering in some cases. When its concentration in the material is optimal it imparts the material such properties as strength, viscosity, hardness, wear resistance. Problems concerning powder metallurgy of amorphous phosphorus-containing alloys are reported

  20. Phosphorus and the dairy cow

    OpenAIRE

    Ekelund, Adrienne

    2003-01-01

    The general aim of the present work was to investigate phosphorus balance in the dairy cow, with reference to the amount and source of phosphorus. Furthermore, biochemical bone markers were used to study the bone turnover during the lactation and dry period. Phosphorus is located in every cell of the body and has more known functions than any other mineral element in the animal body. Phosphorus is also an important constituent of milk, and is therefore required in large amounts in a high yiel...

  1. Solvent Extraction Separation of Phosphorus for the Measurement of {sup 32}P

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Sang Hoon; Lee, Heung N.; Ahn, Hong Joo; Han, Sun ho; Jee, Kwang Yong [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

    2006-07-01

    Phosphorus is a major element in life and plays essential roles in the human body. On the other hand, phosphorus organic compound has high toxicity, therefore, the determination of trace amount of phosphorus is important in environment studies. Development of an analytical method for the determination of low levels of phosphorus is very important as a very few analytical techniques yield reliable results for this element at trace levels. Radioactive phosphorus, {sup 32}P (T1/2 = 14.3 d, Emax 1.71 MeV) is the highest energy beta-emitting radionuclides and now generally accepted as an effective therapeutic agent for chronic leukemia and excess red blood cells. But, {sup 32}P used in diagnosis and treatment are generated radioactive waste such as pipette tips, latex gloves, angioplastic balloons, Kimwipes etc.. We'll analyze {sup 32}P in medical radioactive waste in the future. Even if {sup 32}P has low level activity and short halflife, we have to control radioactive materials in medical waste. In this work, experiment separation using solvent extraction of inactive phosphorus as preliminary experiments for the establishment of analysis. Phosphorus is extracted tri-n-octylamine (TNOA)/ xylene, which is the most suitable solvent and then is measured by UV-visable spectrophotometer.

  2. Solvent Extraction Separation of Phosphorus for the Measurement of 32P

    International Nuclear Information System (INIS)

    Kang, Sang Hoon; Lee, Heung N.; Ahn, Hong Joo; Han, Sun ho; Jee, Kwang Yong

    2006-01-01

    Phosphorus is a major element in life and plays essential roles in the human body. On the other hand, phosphorus organic compound has high toxicity, therefore, the determination of trace amount of phosphorus is important in environment studies. Development of an analytical method for the determination of low levels of phosphorus is very important as a very few analytical techniques yield reliable results for this element at trace levels. Radioactive phosphorus, 32 P (T1/2 = 14.3 d, Emax 1.71 MeV) is the highest energy beta-emitting radionuclides and now generally accepted as an effective therapeutic agent for chronic leukemia and excess red blood cells. But, 32 P used in diagnosis and treatment are generated radioactive waste such as pipette tips, latex gloves, angioplastic balloons, Kimwipes etc.. We'll analyze 32 P in medical radioactive waste in the future. Even if 32 P has low level activity and short halflife, we have to control radioactive materials in medical waste. In this work, experiment separation using solvent extraction of inactive phosphorus as preliminary experiments for the establishment of analysis. Phosphorus is extracted tri-n-octylamine (TNOA)/ xylene, which is the most suitable solvent and then is measured by UV-visable spectrophotometer

  3. Vacancy supersaturations produced by high-energy ion implantation

    International Nuclear Information System (INIS)

    Venezia, V.C.; Eaglesham, D.J.; Jacobson, D.C.; Gossmann, H.J.

    1998-01-01

    A new technique for detecting the vacancy clusters produced by high-energy ion implantation into silicon is proposed and tested. This technique takes advantage of the fact that metal impurities, such as Au, are gettered near one-half of the projected range (1/2 R p ) of MeV implants. The vacancy clustered region produced by a 2 MeV Si + implant into silicon has been labeled with Au diffused in from the front surface. The trapped Au was detected by Rutherford backscattering spectrometry (RBS) to profile the vacancy clusters. Cross section transmission electron microscopy (XTEM) analysis shows that the Au in the region of vacancy clusters is in the form of precipitates. By annealing MeV implanted samples prior to introduction of the Au, changes in the defect concentration within the vacancy clustered region were monitored as a function of annealing conditions

  4. The influence of phosphorus on the corrosion of iron in calcium nitrate

    International Nuclear Information System (INIS)

    Windisch, C.F. Jr.; Baer, D.R.; Jones, R.H.; Engelhard, M.H.

    1992-01-01

    This paper reports that intergranular stress corrosion cracking (IGSCC) of metallic alloys including iron is strongly influenced by the presence of grain boundary impurities such as phosphorus. In this study to determine how phosphorus affects the corrosion of ion, electrochemical polarization methods were used in conjunction with surface analyses employing ultrahigh vacuum transfer. Specifically, these methods were used to examine the corrosion of iron, iron/phosphorus alloys, and iron implanted with phosphorus in deaerated 55 weight percent Ca(NO 3 ) 2 solutions at 60 degrees C. The presence of phosphorus in iron accelerated corrosion in both the active and passive regions, with the effect being more pronounced in the passive region. In the active region, the phosphorus was oxidized to phosphate which, in turn, appeared to assist the dissolution of the semiprotective Fe 3 O 4 . In the passive region, the phosphorus (when unoxidized) accelerated corrosion by some other mechanism. The FePO 4 that formed in the passive region did not inhibit passivation by, rather, was incorporated in the passive film. The chemical transformations would appear to explain, at least partly, the high IGSCC rates observed for ion containing phosphorus segregated at grain boundaries

  5. Phosphorus, sulfur and pyridine

    OpenAIRE

    Schönberger, Stefanie

    2013-01-01

    The synthesis of distinct neutral or anionic P,S compounds in solution provides a great challenge for chemists. Due to the similarity in the energies of the P–P, P–S and S–S bonds nearly solely a mixture of compounds with different composition and charge is obtained. Our interest focuses on the system consisting of phosphorus, sulfur and pyridine, with the aim of a greater selectivity of P,S compounds in solution. The combination of these three components offers the opportunity...

  6. Towards a closed phosphorus cycle

    NARCIS (Netherlands)

    Keyzer, M.A.

    2010-01-01

    Summary: This paper stresses the need to address upcoming scarcity of phosphorus, a mineral nutrient that is essential for all life on Earth. Agricultural crops obtain phosphorus from the pool in the soil that can be replenished by recycling of organic material, or by application of inorganic

  7. In vitro activation of bone with 14 MeV neutrons

    International Nuclear Information System (INIS)

    Holmberg, P.; Hyvoenen, M.; Tarvainen, M.

    1978-01-01

    Samples of compact bone, bone marrow and spongiosa of cow femur have been irradiated in vitro with 14 MeV neutrons. The Ca/P ratio for compact bone was found to be 2.16+-0.24. The suitability of using 14 MeV neutrons and the 31 P(n, α) 28 Al reaction for studying the bone mineral composition in vitro is discussed. It was demonstrated that 14 MeV neutrons can be used for the determination of calcium and phosphorus in bone with the aid of the 44 Ca(n, p) 44 K and 31 P(n, α) 28 Al reactions, respectively. As the Ca/P ratio for compact bone is known, the calcium content can be deduced indirectly from a determination of the phosphorus. This method has the advantage of not requiring moderator materials, as in the case when the 48 Ca(n, γ) 49 Ca reaction is employed. The half-life of the 28 Al activity is short (T=2.243 m) so that only short irradiation times are necessary. (T.G.)

  8. Thin hydroxyapatite surface layers on titanium produced by ion implantation

    CERN Document Server

    Baumann, H; Bilger, G; Jones, D; Symietz, I

    2002-01-01

    In medicine metallic implants are widely used as hip replacement protheses or artificial teeth. The biocompatibility is in all cases the most important requirement. Hydroxyapatite (HAp) is frequently used as coating on metallic implants because of its high acceptance by the human body. In this paper a process is described by which a HAp surface layer is produced by ion implantation with a continuous transition to the bulk material. Calcium and phosphorus ions are successively implanted into titanium under different vacuum conditions by backfilling oxygen into the implantation chamber. Afterwards the implanted samples are thermally treated. The elemental composition inside the implanted region was determined by nuclear analysis methods as (alpha,alpha) backscattering and the resonant nuclear reaction sup 1 H( sup 1 sup 5 N,alpha gamma) sup 1 sup 2 C. The results of X-ray photoelectron spectroscopy indicate the formation of HAp. In addition a first biocompatibility test was performed to compare the growing of m...

  9. Annealing of Al implanted 4H silicon carbide

    International Nuclear Information System (INIS)

    Hallen, A; Suchodolskis, A; Oesterman, J; Abtin, L; Linnarsson, M

    2006-01-01

    Al ions were implanted with multiple energies up to 250 keV at elevated temperatures in n-type 4H SiC epitaxial layers to reach a surface concentration of 1x10 20 cm -3 . These samples were then annealed at temperatures between 1500 and 1950 deg. C. A similar 4H SiC epitaxial sample was implanted by MeV Al ions to lower doses and annealed only at 200 and 400 deg. C. After annealing, cross-sections of the samples were characterized by scanning spreading resistance microscopy (SSRM). The results show that the resistivity of high-dose Al implanted samples has not reached a saturated value, even after annealing at the highest temperature. For the MeV Al implanted sample, the activation of Al has not yet started, but a substantial annealing of the implantation induced damage can be seen from the SSRM depth profiles

  10. Determination of phosphorus in semiconductor grade silicon by neutron activation analysis

    International Nuclear Information System (INIS)

    Jaskolska, H.; Rowinska, L.

    1975-01-01

    A method of determination of phosphorus in silicon has been elaborated. The separation of phosphorus is based on the extraction of phosphomolybdic complex in the presence of hold-back carriers of Ta and Au. Contamination factors for various impurities were determined. The lower limit of determination equals 3.10 -11 g P. Types of errors in the determination of concentration profiles are discussed. The method meets the following requirements: 1./ It ensures good separation of phosphorus from elements occuring in silicon plates (i.e. Ta, Au, Sn, Ge, Ce, Sb, As, Cu, and Na). 2./ It ensures high chemical yield of phosphorus separation. 3./ It ensures high efficiency of the measurement of 32 P β-activity. 4./ It is simple and rapid, since, for the determination of a implantation profile, it is necessary to analyse several tens of layers. (T.G.)

  11. Effect of phosphorus on out-of-pile and in-pile behaviour of stabilized austenitic stainless steels

    International Nuclear Information System (INIS)

    Delalande, C.

    1992-02-01

    This work deals with the improvement of swelling resistance for austenitic stainless steels used as fuel pin cladding in Fast Breeder Reactor. The effect of phosphorus addition and multistabilization by Ti and Nb or Ti, Nb and V are studied on Fe-15Cr-15/25Ni based alloys. First, different ageings are performed to verify the stability of dislocation network, main condition of swelling absence at high irradiation temperature (T>550 deg C, and to study the precipitation, especially the one being able to form during irradiation and to control swelling at lower temperature. Then, 1 MeV electron irradiations are performed to estimate the swelling resistance of these multistabilized steels. Furthermore, neutron radiation induced microstructure of phosphorus modified steels already irradiated in reactor give us fundamental informations to predict and explain the effect of phosphorus and multistabilization on the behaviour of the multistabilized steels. Our results show that niobium plays the same role as titanium on the stabilization ratio in steels, but it is present in more phases. Vanadium seems to have less effect on stability of dislocation network and chemical composition of precipitates. Phosphorus increases the stability of dislocation network of multistabilized steels and FeNbP phosphides are observed at high temperature for phosphorus level above 600 ppm. 1 MeV electron irradiations show that multistabilized steels present good swelling resistance. Phosphorus addition increases the swelling resistance of neutron irradiated steels. (Author). refs., figs., tabs

  12. Ion implantation

    International Nuclear Information System (INIS)

    Johnson, E.

    1986-01-01

    It is the purpose of the present paper to give a review of surface alloy processing by ion implantation. However, rather than covering this vast subject as a whole, the survey is confined to a presentation of the microstructures that can be found in metal surfaces after ion implantation. The presentation is limited to alloys processed by ion implantation proper, that is to processes in which the alloy compositions are altered significantly by direct injection of the implanted ions. The review is introduced by a presentation of the processes taking place during development of the fundamental event in ion implantation - the collision cascade, followed by a summary of the various microstructures which can be formed after ion implantation into metals. This is compared with the variability of microstructures that can be achieved by rapid solidification processing. The microstructures are subsequently discussed in the light of the processes which, as the implantations proceed, take place during and immediately after formation of the individual collision cascades. These collision cascades define the volumes inside which individual ions are slowed down in the implanted targets. They are not only centres for vigorous agitation but also the sources for formation of excess concentrations of point defects, which will influence development of particular microstructures. A final section presents a selection of specific structures which have been observed in different alloy systems. (orig./GSCH)

  13. Photocarrier dynamics in monolayer phosphorene and bulk black phosphorus.

    Science.gov (United States)

    Zereshki, Peymon; Wei, Yaqing; Ceballos, Frank; Bellus, Matthew Z; Lane, Samuel D; Pan, Shudi; Long, Run; Zhao, Hui

    2018-06-13

    We report a combined theoretical and experimental study on photocarrier dynamics in monolayer phosphorene and bulk black phosphorus. Samples of monolayer phosphorene and bulk black phosphorus were fabricated by mechanical exfoliation, identified according to their reflective contrasts, and protected by covering them with hexagonal boron nitride layers. Photocarrier dynamics in these samples was studied by an ultrafast pump-probe technique. The photocarrier lifetime of monolayer phosphorene was found to be about 700 ps, which is about 9 times longer than that of bulk black phosphorus. This trend was reproduced in our calculations based on ab initio nonadiabatic molecular dynamics combined with time-domain density functional theory in the Kohn-Sham representation, and can be attributed to the smaller bandgap and stronger nonadiabatic coupling in bulk. The transient absorption response was also found to be dependent on the sample orientation with respect to the pump polarization, which is consistent with the previously reported anisotropic absorption of phosphorene. In addition, an oscillating component of the differential reflection signal at early probe delays was observed in the bulk sample and was attributed to the layer-breathing phonon mode with an energy of about 1 meV and a decay time of about 1.35 ps. These results provide valuable information for application of monolayer phosphorene in optoelectronics.

  14. Total Phosphorus in Surface Water

    Data.gov (United States)

    U.S. Environmental Protection Agency — Excess phosphorus in surface water can result in eutrophication. TOTALP is reported in kilograms/hectare/year. More information about these resources, including the...

  15. Phosphorus chemistry in everyday living

    National Research Council Canada - National Science Library

    Toy, Arthur D. F

    1976-01-01

    The author has drawn on his 35 years of experience as a research scientist in phosphorus chemistry to produce a book that is not only readable to the non-chemist but sophisticated enough to interest...

  16. phosphorus retention data and metadata

    Science.gov (United States)

    phosphorus retention in wetlands data and metadataThis dataset is associated with the following publication:Lane , C., and B. Autrey. Phosphorus retention of forested and emergent marsh depressional wetlands in differing land uses in Florida, USA. Wetlands Ecology and Management. Springer Science and Business Media B.V;Formerly Kluwer Academic Publishers B.V., GERMANY, 24(1): 45-60, (2016).

  17. "Doping" pentacene with sp(2)-phosphorus atoms: towards high performance ambipolar semiconductors.

    Science.gov (United States)

    Long, Guankui; Yang, Xuan; Chen, Wangqiao; Zhang, Mingtao; Zhao, Yang; Chen, Yongsheng; Zhang, Qichun

    2016-01-28

    Recent research progress in black phosphorus sheets strongly encourages us to employ pentacene as a parent system to systematically investigate how the "doping" of sp(2)-phosphorus atoms onto the backbone of pentacene influences its optical and charge transport properties. Our theoretical investigations proved that increasing the contribution of the pz atomic orbital of the sp(2)-phosphorus to the frontier molecular orbital of phosphapentacenes could significantly decrease both hole and electron reorganization energies and dramatically red-shift the absorption of pentacene. The record smallest hole and electron reorganization energies of 69.80 and 95.74 meV for heteropentacene derivatives were obtained. These results suggest that phosphapentacenes (or phosphaacenes) could be potential promising candidates to achieve both higher and balanced mobilities in organic field effect transistors and realize a better power conversion efficiency in organic photovoltaics.

  18. Muonium states and dynamics in phosphorus and sulphur

    International Nuclear Information System (INIS)

    Cox, S.F.J.; Cottrell, S.P.; Hopkins, G.A.; Kay, M.; Pratt, F.L.

    1997-01-01

    The various states formed by positive muons implanted into phosphorus and sulphur have been characterized as a model for interstitial hydrogen, of which little is known in these elements. Repolarization studies reveal muonium-like states in each case, giving estimates of the hyperfine parameters and, for sulphur at least, an indication of the coexistence of a molecular radical state. The longitudinal-field relaxation functions suggest conversion of the paramagnetic states to diamagnetic, i.e. ionization or chemical reaction, in competition with strong spin-lattice relaxation

  19. Efficiency in the avail (by Com) of zinc (65ZnCl2) and phosphorus (Na H2 PO4) ions

    International Nuclear Information System (INIS)

    Calvache, Marcelo.

    1994-01-01

    The efficiency of corn to use phosphorus and zinc ions at different growing periods was determined in two soils Udic Eutrandept and Andic Haplustoll of Pichincha Province, after adding 10 ppm zinc labelled with 65Zn (gamma emisor, 1.115 meV), 50 and 100 ppm phosphorus, and a complementary fertilization. Root, stem and leaf samples were analyzed at 15 days intervals during the growing period. Zinc efficiency use was determined by isotopic method, and phosphorus by the non-isotopic. Significant differences were found for sampling period and soil types. The efficiency of use of zinc and phosphorus fertilizer increased with the age of the crop, being higher for the soil originally containing less Zn and P. Dry matter content increased linearly with phosphorus fertilizer addition

  20. [Effects of phosphorus sources on phosphorus fractions in rhizosphere soil of wild barley genotypes with high phosphorus utilization efficiency].

    Science.gov (United States)

    Cai, Qiu-Yan; Zhang, Xi-Zhou; Li, Ting-Xuan; Chen, Guang-Deng

    2014-11-01

    High P-efficiency (IS-22-30, IS-22-25) and low P-efficiency (IS-07-07) wild barley cultivars were chosen to evaluate characteristics of phosphorus uptake and utilization, and properties of phosphorus fractions in rhizosphere and non-rhizosphere in a pot experiment with 0 (CK) and 30 mg P · kg(-1) supplied as only Pi (KH2PO4), only Po (phytate) or Pi + Po (KH2PO4+ phytate). The results showed that dry matter and phosphorus accumulation of wild barley in the different treatments was ranked as Pi > Pi + Po > Po > CK. In addition, dry matter yield and phosphorus uptake of wild barley with high P-efficiency exhibited significantly greater than that with low P-efficiency. The concentration of soil available phosphorus was significantly different after application of different phosphorus sources, which was presented as Pi > Pi + Po > Po. The concentration of soil available phosphorus in high P-efficiency wild barley was significantly higher than that of low P-efficiency in the rhizosphere soil. There was a deficit in rhizosphere available phosphorus of high P-efficiency wild barley, especially in Pi and Pi+Po treatments. The inorganic phosphorus fractions increased with the increasing Pi treatment, and the concentrations of inorganic phosphorus fractions in soil were sorted as follows: Ca10-P > O-P > Fe-P > Al-P > Ca2-P > Ca8-P. The contents of Ca2-P and Ca8-P for high P-efficiency wild barley showed deficits in rhizosphere soil under each phosphorus source treatment. In addition, enrichment of Al-P and Fe-P was observed in Pi treatment in rhizosphere soil. The concentrations of organic phosphorus fractions in soil were sorted as follows: moderate labile organic phosphorus > moderate resistant, resistant organic phosphorus > labile organic phosphorus. The labile and moderate labile organic phosphorus enriched in rhizosphere soil and the greatest enrichment appeared in Pi treatment. Furthermore, the concentrations of moderate resistant organic phosphorus and resistant

  1. Carmustine Implant

    Science.gov (United States)

    ... works by slowing or stopping the growth of cancer cells in your body. ... are pregnant, plan to become pregnant, or are breast-feeding. If you become pregnant while receiving carmustine implant, call your doctor. Carmustine may harm the fetus.

  2. Cochlear Implants

    Science.gov (United States)

    ... NIDCD A cochlear implant is a small, complex electronic device that can help to provide a sense ... Hearing Aids Retinitis Pigmentosa - National Eye Institute Telecommunications Relay Services Usher Syndrome Your Baby's Hearing Screening News ...

  3. Phosphorus oxide gate dielectric for black phosphorus field effect transistors

    Science.gov (United States)

    Dickerson, W.; Tayari, V.; Fakih, I.; Korinek, A.; Caporali, M.; Serrano-Ruiz, M.; Peruzzini, M.; Heun, S.; Botton, G. A.; Szkopek, T.

    2018-04-01

    The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence efficiency of exfoliated bP flakes. We apply phosphorus oxide passivation in the fabrication of bP field effect transistors using a gate stack consisting of a POx layer grown by reactive ion etching followed by atomic layer deposition of Al2O3. We observe room temperature top-gate mobilities of 115 cm2 V-1 s-1 in ambient conditions, which we attribute to the low defect density of the bP/POx interface.

  4. High current pelletron for ion implantation

    International Nuclear Information System (INIS)

    Schroeder, J.B.

    1989-01-01

    Since 1984, when the first production MeV ion implanter (an NEC model MV-T30) went on-line, interest in versatile electrostatic accelerator systems for MeV ion implantation has grown. The systems use a negative ion source to inject a tandem megavolt accelerator. In early systems the 0.4 mA of charging current from the two Pelletron charging chains in the accelerator was sufficient for the low intensity of beams from the ion source. This 2-chain system, however, is no longer adequate for the much higher beam intensities from today's improved ion sources. A 4-chain charging system, which delivers 1.3 mA to the high voltage terminal, was developed and is in operation in new models of NEC S Series Pelletron accelerators. This paper describes the latest beam performance of 1 MV and 1.7 MW Pelletron accelerators with this new 4-chain charging system. (orig.)

  5. Implantation, recoil implantation, and sputtering

    International Nuclear Information System (INIS)

    Kelly, R.

    1984-01-01

    The implantation and sputtering mechanisms which are relevant to ion bombardment of surfaces are described. These are: collision, thermal, electronic and photon-induced sputtering. 135 refs.; 36 figs.; 9 tabs

  6. Electric Conductivity of Phosphorus Nanowires

    International Nuclear Information System (INIS)

    Jing-Xiang, Zhang; Hui, Li; Xue-Qing, Zhang; Kim-Meow, Liew

    2009-01-01

    We present the structures and electrical transport properties of nanowires made from different strands of phosphorus chains encapsulated in carbon nanotubes. Optimized by density function theory, our results indicate that the conductance spectra reveal an oscillation dependence on the size of wires. It can be seen from the density of states and current-voltage curves that the structure of nanowires affects their properties greatly. Among them, the DNA-like double-helical phosphorus nanowire exhibits the distinct characteristic of an approximately linear I – V relationship and has a higher conductance than others. The transport properties of phosphorus nanowires are highly correlated with their microstructures. (condensed matter: structure, mechanical and thermal properties)

  7. Study of high energy ion implantation of boron and oxygen in silicon

    International Nuclear Information System (INIS)

    Thevenin, P.

    1991-06-01

    Three aspects of high energy (0.5-3 MeV) light ions ( 11 B + and 16 O + ) implantation in silicon are examined: (1)Spatial repartition; (2) Target damage and (3) Synthesis by oxygen implantation of a buried silicon oxide layer

  8. Interaction of implanted deuterium and helium with beryllium: radiation enhanced oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Langley, R.A.

    1979-01-01

    The interaction of implanted deuterium and helium with beryllium is of significant interest in the application of first wall coatings and other components of fusion reactors. Electropolished polycrystalline beryllium was first implanted with an Xe backscatter marker at 1.98 MeV followed by either implantation with 5 keV diatomic deuterium or helium. A 2.0 MeV He beam was used to analyze for impurity buildup; namely oxygen. The oxide layer thickness was found to increase linearly with increasing implant fluence. A 2.5 MeV H/sup +/ beam was used to depth profile the D and He by ion backscattering. In addition the retention of the implant was measured as a function of the implant fluence. The mean depth of the implant was found to agree with theoretical range calculations. Scanning electron microscopy was used to observe blister formation. No blisters were observed for implanted D but for implanted He blisters occurred at approx. 1.75 x 10/sup 17/ He cm/sup -2/. The blister diameter increased with increasing implant fluence from about 0.8 ..mu..m at 10/sup 18/ He cm/sup -2/ to 5.5 ..mu..m at 3 x 10/sup 18/ He cm/sup -2/.

  9. Interaction of implanted deuterium and helium with beryllium: radiation enhanced oxidation

    International Nuclear Information System (INIS)

    Langley, R.A.

    1979-01-01

    The interaction of implanted deuterium and helium with beryllium is of significant interest in the application of first wall coatings and other components of fusion reactors. Electropolished polycrystalline beryllium was first implanted with an Xe backscatter marker at 1.98 MeV followed by either implantation with 5 keV diatomic deuterium or helium. A 2.0 MeV He beam was used to analyze for impurity buildup; namely oxygen. The oxide layer thickness was found to increase linearly with increasing implant fluence. A 2.5 MeV H + beam was used to depth profile the D and He by ion backscattering. In addition the retention of the implant was measured as a function of the implant fluence. The mean depth of the implant was found to agree with theoretical range calculations. Scanning electron microscopy was used to observe blister formation. No blisters were observed for implanted D but for implanted He blisters occurred at approx. 1.75 x 10 17 He cm -2 . The blister diameter increased with increasing implant fluence from about 0.8 μm at 10 18 He cm -2 to 5.5 μm at 3 x 10 18 He cm -2

  10. Evaluation of electron beam stabilization for ion implant processing

    Science.gov (United States)

    Buffat, Stephen J.; Kickel, Bee; Philipps, B.; Adams, J.; Ross, Matthew F.; Minter, Jason P.; Marlowe, Trey; Wong, Selmer S.

    1999-06-01

    With the integration of high energy ion implant processes into volume CMOS manufacturing, the need for thick resist stabilization to achieve a stable ion implant process is critical. With new photoresist characteristics, new implant end station characteristics arise. The resist outgassing needs to be addressed as well as the implant profile to ensure that the dosage is correct and the implant angle does not interfere with other underlying features. This study compares conventional deep-UV/thermal with electron beam stabilization. The electron beam system used in this study utilizes a flood electron source and is a non-thermal process. These stabilization techniques are applied to a MeV ion implant process in a CMOS production process flow.

  11. RBS/NRA/channeling analysis of implanted immiscible species

    International Nuclear Information System (INIS)

    Naramoto, H.; Yamamoto, S.; Narumi, K.

    2000-01-01

    Ion implantation of immiscible elements was performed to prepare supersaturated substance for further heat treatment. 63 Cu ion implantation was made at low temperature into Nb(1 0 0), (1 1 0) and (1 1 1) single crystal films on sapphire, and the induced lattice damage and the lattice location of implanted Cu atoms were analyzed by 2.7 MeV 4 He + RBS/channeling. The coherent segregation of 63 Cu atoms with specific crystallographic orientations was found in the near surface region (Cu(1 0 0)/Nb(1 0 0), Cu(1 1 1)/Nb(1 1 0) and Cu(1 1 0)/Nb(1 1 1)). The same kind of study was also made in Ir(1 0 0)/MgO(1 0 0) implanted with 50 keV 12 C + ions. In addition to 2 MeV 4 He + RBS/channeling, 1.22 MeV d + RBS/NRA/channeling was employed to detect implanted 12 C atoms. The results suggest that 12 C atoms are aligned along Ir direction at least by low temperature implantation followed by thermal annealing

  12. Guiding phosphorus stewardship for multiple ecosystem services

    Science.gov (United States)

    Phosphorus is vital to agricultural production and water quality regulation. While the role of phosphorus in agriculture and water quality has been studied for decades, the benefits of sustainable phosphorus use and management for society due to its downstream impacts on multiple ecosystem services...

  13. Hip Implant Systems

    Science.gov (United States)

    ... Implants and Prosthetics Metal-on-Metal Hip Implants Hip Implants Share Tweet Linkedin Pin it More sharing options Linkedin Pin it Email Print Hip implants are medical devices intended to restore mobility ...

  14. Breast reconstruction - implants

    Science.gov (United States)

    Breast implants surgery; Mastectomy - breast reconstruction with implants; Breast cancer - breast reconstruction with implants ... harder to find a tumor if your breast cancer comes back. Getting breast implants does not take as long as breast reconstruction ...

  15. Phosphorus requirement in laying hens

    NARCIS (Netherlands)

    Lambert, W.; Krimpen, van M.M.; Star, L.

    2014-01-01

    It was hypothesized that P supply by feed in alternative housing systems can be lowered without negative effects on bone quality and production performance. Therefore, the objectives of the current study were 1) to update the retainable phosphorus (rP) needs of two modern laying hen breeds from 36

  16. Greening the global phosphorus cycle

    NARCIS (Netherlands)

    Withers, Paul J.A.; Elser, James J.; Hilton, Julian; Ohtake, Hisao; Schipper, Willem J.; Dijk, Van Kimo C.

    2015-01-01

    The sustainability of global phosphorus (P) use is emerging as a major societal goal to secure future food, energy, and water security for a growing population. Phosphate rock (PR) is a critical raw material whose inefficiency of use is leading to widespread eutrophication and uncertainties about

  17. Anthropogenic phosphorus flows in Denmark

    DEFF Research Database (Denmark)

    Klinglmair, Manfred

    Phosphorus (P) is an essential plant nutrient mined from the earth’s crust as phosphate rock. It cannot be substituted, making it a crucial resource for food production. For the EU, future phosphate scarcity is a potential geopolitical and strategic threat. An increasing worldwide phosphate demand...

  18. Evidence for two narrow pp resonances at 2020 MeV and 2200 MeV

    CERN Document Server

    Benkheiri, P; Bouquet, B; Briandet, P; D'Almagne, B; Dang-Vu, C; De Rosny, G; Eisenstein, B I; Ferrer, A; Fleury, P; Grossetête, B; Irwin, G; Jacholkowski, A; Lahellec, A; Nguyen, H; Petroff, P; Richard, F; Rivet, P; Roudeau, P; Rougé, A; Rumpf, M; Six, J; Thénard, J M; Treille, D; Volte, A; Yaffe, D; Yiou, T P; Yoshida, H

    1977-01-01

    From the study of the reaction pi /sup -/p to p/sub F/pp pi /sup -/ using a fast proton (p/sub F/) trigger device in the CERN Omega spectrometer, the authors find evidence for two narrow pp states produced mainly in association with a Delta degrees (1232) and a N degrees (1520). The statistical significance of each peak is greater than 6 standard deviations. Masses and natural widths of these resonances are respectively M/sub 1/=2020+or-3 MeV, Gamma /sub 1 /=24+or-12 MeV and M/sub 2/=2204+or-5 MeV, Gamma /sub 2/=16/sub -16 //sup +20/ MeV. The data are consistent with a small production of the narrow approximately 1935 MeV resonance already reported. Production cross sections for these new pp resonances are given. (8 refs).

  19. Double crystal X-ray analysis of phosphorus precipitation in supersaturated Si-P solid solutions

    International Nuclear Information System (INIS)

    Servidori, M.; Zini, Q.; Dal Monte, C.

    1983-01-01

    The physical nature of the electrically inactive phosphorus in silicon is investigated by double crystal X-ray diffraction measurements. This analysis is performed on laser annealed supersaturated samples, doped by ion implantation up to 5 x 10 21 cm -3 . After isothermal heat treatments, these solid solutions show marked reductions in the electrically active phosphorus concentration. In particular, 850 0 C heatings give rise to a carrier concentration which corresponds to the phosphorus solubility in equilibrium with the inactive dopant. This dopant is characterized by means of lattice strain measurements: they are found consistent with the presence of perfectly coherent cubic SiP precipitates. This result is in agreement with the one obtained in preceeding works by electrical measurements and transmission electron microscopy observations and contradicts the hypothesis that the excess dopant atoms are, at least in part, charged point defects (E-centres). (author)

  20. Influence of the growth-surface on the incorporation of phosphorus in SiC

    International Nuclear Information System (INIS)

    Rauls, E.; Gerstmann, U.; Frauenheim, Th.

    2005-01-01

    Phosphorus is a common and desired n-type dopant of SiC, but it turned out that doping by diffusion or during growth is rarely successful. To avoid the efforts and the creation of damage if ion implantation is used instead, these techniques were, though, highly desirable. In this work, we have investigated theoretically the experimental observation that phosphorus obviously hardly diffuses into the material. Not the diffusivity of the dopant but its addiction to occupy a three-fold coordinated surface site are critical, together with the way the surface affects the bulk migration barriers of the dopants. Whereas the most common growth direction for 4H-SiC, the polar silicon terminated (0001) surface, seems to be least appropriate for the incorporation of phosphorus atoms, growth along the nonpolar [112-bar 0] provides a good possibility to achieve efficient P-doping during growth

  1. Few-layer black phosphorus nanoparticles.

    Science.gov (United States)

    Sofer, Zdenek; Bouša, Daniel; Luxa, Jan; Mazanek, Vlastimil; Pumera, Martin

    2016-01-28

    Herein, black phosphorus quantum dots and nanoparticles of a few layer thickness were prepared and characterized using STEM, AFM, dynamic light scattering, X-ray photoelectron spectroscopy, X-ray diffraction, Raman spectroscopy and photoluminescence. Impact electrochemistry of the induvidual black phosphorus nanoparticles allows their size determination. The centrifugation of colloidal black phosphorus nanoparticles allowed separation of quantum dots with sizes up to 15 nm. These black phosphorus nanoparticles exhibit a large band gap and are expected to find a wide range of applications from semiconductors to biomolecule tags. The use of black phosphorus nanoparticles for vapour sensing was successfully demonstrated.

  2. SEQUENTIAL ELECTRODIALYTIC EXTRACTION OF PHOSPHORUS COMPOUNDS

    DEFF Research Database (Denmark)

    2017-01-01

    The present invention relates to an apparatus for electrodialytic extraction of phosphorus from a particulate material in suspension and to a method for electrodialytic phosphorus recovery, which uses the apparatus. The method may be applied for wastewater treatment, and/or treatment of particulate...... material rich in phosphorus. The present invention provides an apparatus for electrodialytic extraction of phosphorus from a particulate material comprising acidic and/or alkaline soluble phosphorus compounds, in suspension, comprising: • a first electrodialytic cell comprising a first anolyte compartment...

  3. Positron acceleration to 200 MeV

    International Nuclear Information System (INIS)

    Leboutet, H.

    1983-01-01

    220 MeV is the energy that has to be obtained in routine operation. A standard 12m girder with SLED II can give 220 MeV minus a few percent due to not riding at the crest of the wave. In order to have the 200 MeV with only one girder, a klystron at full power all the time would be required - kept brand new. Then, for safety it is necessary to use two klystrons as designated in the SLC design. Having two klystrons gives freedom for the choice of the best arrangement. Since there will be excess rf power, it can be traded against higher gradient, shorter waveguides, larger apertures (lower shunt impedence)

  4. Structural investigations of amorphised iron and nickel by high-fluence metalloid ion implantation

    International Nuclear Information System (INIS)

    Rauschenbach, B.; Otto, G.; Hohmuth, K.; Heera, V.

    1987-01-01

    Boron, phosphorus and arsenic ions have been implanted into evaporated iron and nickel thin films at room temperature, and the implantation-induced microstructure has been investigated by high-voltage electron microscopy and transmission high energy electron diffraction. The metal films were implanted with ions to a constant dose of 1 x 10 17 and 5 x 10 17 ions/cm 2 respectively at energy of 50 keV. An amorphous layer was produced by boron and phosphorus ion implantation. Information on the atomic structure of the amorphous layers was obtained from the elastically diffracted electron intensity. On the basis of the correct scattering curves, the total interference function and the pair correlation function were determined. Finally, the atomic arrangement of the implantation-induced amorphous layers is discussed and structure produced by ion irradiation is compared with amorphous structures formed with other techniques. (author)

  5. Buried injector logic, a vertical IIL using deep ion implantation

    NARCIS (Netherlands)

    Mouthaan, A.J.

    1987-01-01

    A vertically integrated alternative for integrated injection logic has been realized, named buried injector logic (BIL). 1 MeV ion implantations are used to create buried layers. The vertical pnp and npn transistors have thin base regions and exhibit a limited charge accumulation if a gate is

  6. Environmental Phosphorus Recovery Based on Molecular Bioscavengers

    DEFF Research Database (Denmark)

    Gruber, Mathias Felix

    Phosphorus is a ubiquitous element of all known life and as such it is found throughout numerous key molecules related to various cellular functions. The supply of phosphorus is tightly linked to global food security, since phosphorus is used to produce agricultural fertilizers, without which...... it would not be possible to feed the world population. Sadly, the current supply of phosphorus is based on the gradual depletion of limited fossil reserves, and some estimates predict that within 15-25 years we will consume more phosphorus than we can produce. There is therefore a strong international...... pressure to develop sustainable phosphorus practices as well as new technologies for phosphorus recovery. Nature has spent billions of years refining proteins that interact with phosphates. This has inspired the present work where the overall ambitions are: to facilitate the development of a recovery...

  7. MeV fullerene impacts on mica

    Energy Technology Data Exchange (ETDEWEB)

    Doebeli, M.; Scandella, L. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Ames, F. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    Hillock heights on mica irradiated with MeV C{sub 60} ions have been investigated systematically. Results show that the small range of secondary particles along the track plays a crucial role in defect production. (author) figs., tab., refs.

  8. <600> MeV synchro-cyclotron

    CERN Multimedia

    CERN PhotoLab

    1971-01-01

    One of the 14 pancakes of the new magnet coils for the 600 MeV synchro-cyclotron which were wound and coated with epoxy resin on the CERN site. These new coils will replace the present ones which have been in use for more than 14 years but are now showing signs of deteriorations.

  9. Silicon exfoliation by hydrogen implantation: Actual nature of precursor defects

    Energy Technology Data Exchange (ETDEWEB)

    Kuisseu, Pauline Sylvia Pokam, E-mail: pauline-sylvia.pokam-kuisseu@cnrs-orleans.fr [CEMHTI-CNRS, 3A, rue de la férollerie, 45071 Orléans (France); Pingault, Timothée; Ntsoenzok, Esidor [CEMHTI-CNRS, 3A, rue de la férollerie, 45071 Orléans (France); Regula, Gabrielle [IM2NP-CNRS-Université d’Aix-Marseille, Avenue Escadrille Normandie Niemen, 13397 Marseille (France); Mazen, Frédéric [CEA-Leti, MINATEC campus, 17, rue des Martyrs, 38054 Grenoble Cedex 9 (France); Sauldubois, Audrey [Université d’Orléans, rue de Chartres – Collegium ST, 45067 Orléans (France); Andreazza, Caroline [ICMN-CNRS-Université d’Orléans, 1b rue de la férollerie, 45071 Orléans (France)

    2017-06-15

    MeV energy hydrogen implantation in silicon followed by a thermal annealing is a very smart way to produce high crystalline quality silicon substrates, much thinner than what can be obtained by diamond disk or wire sawing. Using this kerf-less approach, ultra-thin substrates with thicknesses between 15 µm and 100 µm, compatible with microelectronic and photovoltaic applications are reported. But, despite the benefits of this approach, there is still a lack of fundamental studies at this implantation energy range. However, if very few papers have addressed the MeV energy range, a lot of works have been carried out in the keV implantation energy range, which is the one used in the smart-cut® technology. In order to check if the nature and the growth mechanism of extended defects reported in the widely studied keV implantation energy range could be extrapolated in the MeV range, the thermal evolution of extended defects formed after MeV hydrogen implantation in (100) Si was investigated in this study. Samples were implanted at 1 MeV with different fluences ranging from 6 × 10{sup 16} H/cm{sup 2} to 2 × 10{sup 17} H/cm{sup 2} and annealed at temperatures up to 873 K. By cross-section transmission electron microscopy, we found that the nature of extended defects in the MeV range is quite different of what is observed in the keV range. In fact, in our implantation conditions, the generated extended defects are some kinds of planar clusters of gas-filled lenses, instead of platelets as commonly reported in the keV energy range. This result underlines that hydrogen behaves differently when it is introduced in silicon at high or low implantation energy. The activation energy of the growth of these extended defects is independent of the chosen fluence and is between (0.5–0.6) eV, which is very close to the activation energy reported for atomic hydrogen diffusion in a perfect silicon crystal.

  10. Scaling of ion implanted Si:P single electron devices

    International Nuclear Information System (INIS)

    Escott, C C; Hudson, F E; Chan, V C; Petersson, K D; Clark, R G; Dzurak, A S

    2007-01-01

    We present a modelling study on the scaling prospects for phosphorus in silicon (Si:P) single electron devices using readily available commercial and free-to-use software. The devices comprise phosphorus ion implanted, metallically doped (n + ) dots (size range 50-500 nm) with source and drain reservoirs. Modelling results are compared to measurements on fabricated devices and discussed in the context of scaling down to few-electron structures. Given current fabrication constraints, we find that devices with 70-75 donors per dot should be realizable. We comment on methods for further reducing this number

  11. Scaling of ion implanted Si:P single electron devices

    Energy Technology Data Exchange (ETDEWEB)

    Escott, C C [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Hudson, F E [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Chan, V C [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Petersson, K D [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Clark, R G [Centre for Quantum Computer Technology, School of Physics, UNSW, Sydney, 2052 (Australia); Dzurak, A S [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia)

    2007-06-13

    We present a modelling study on the scaling prospects for phosphorus in silicon (Si:P) single electron devices using readily available commercial and free-to-use software. The devices comprise phosphorus ion implanted, metallically doped (n{sup +}) dots (size range 50-500 nm) with source and drain reservoirs. Modelling results are compared to measurements on fabricated devices and discussed in the context of scaling down to few-electron structures. Given current fabrication constraints, we find that devices with 70-75 donors per dot should be realizable. We comment on methods for further reducing this number.

  12. Polymer tribology by combining ion implantation and radionuclide tracing

    International Nuclear Information System (INIS)

    Timmers, Heiko; Gladkis, Laura G.; Warner, Jacob A.; Byrne, Aidan P.; Grosso, Mariela F. del; Arbeitman, Claudia R.; Garcia-Bermudez, Gerardo; Geruschke, Thomas; Vianden, Reiner

    2010-01-01

    Radionuclide tracers were ion implanted with three different techniques into the ultra-high molecular weight polyethylene polymer. Tracer nuclei of 7 Be were produced with inverse kinematics via the reaction p( 7 Li, 7 Be)n and caught by polymer samples at a forward scattering angle with a maximum implantation energy of 16 MeV. For the first time, 97 Ru, 100 Pd, and, independently, 111 In have been used as radionuclide tracers in ultra-high molecular weight polyethylene. 97 Ru and 100 Pd were recoil-implanted following the fusion evaporation reactions 92 Zr( 12 C,α3n) 97 Ru and 92 Zr( 12 C,4n) 100 Pd with a maximum implantation energy of 8 MeV. 111 In ions were produced in an ion source, mass-separated and implanted at 160 keV. The tribology of implanted polymer samples was studied by tracing the radionuclide during mechanical wear. Uni-directional and bi-directional sliding apparatus with stainless steel actuators were used. Results suggest a debris exchange process as the characteristic feature of the wear-in phase. This process can establish the steady state required for a subsequently constant wear rate in agreement with Archard's equation. The nano-scale implantation of mass-separated 111 In appears best suited to the study of non-linear tribological processes during wear-in. Such non-linear processes may be expected to be important in micro- and nanomachines.

  13. Dietary phosphorus acutely impairs endothelial function.

    Science.gov (United States)

    Shuto, Emi; Taketani, Yutaka; Tanaka, Rieko; Harada, Nagakatsu; Isshiki, Masashi; Sato, Minako; Nashiki, Kunitaka; Amo, Kikuko; Yamamoto, Hironori; Higashi, Yukihito; Nakaya, Yutaka; Takeda, Eiji

    2009-07-01

    Excessive dietary phosphorus may increase cardiovascular risk in healthy individuals as well as in patients with chronic kidney disease, but the mechanisms underlying this risk are not completely understood. To determine whether postprandial hyperphosphatemia may promote endothelial dysfunction, we investigated the acute effect of phosphorus loading on endothelial function in vitro and in vivo. Exposing bovine aortic endothelial cells to a phosphorus load increased production of reactive oxygen species, which depended on phosphorus influx via sodium-dependent phosphate transporters, and decreased nitric oxide production via inhibitory phosphorylation of endothelial nitric oxide synthase. Phosphorus loading inhibited endothelium-dependent vasodilation of rat aortic rings. In 11 healthy men, we alternately served meals containing 400 mg or 1200 mg of phosphorus in a double-blind crossover study and measured flow-mediated dilation of the brachial artery before and 2 h after the meals. The high dietary phosphorus load increased serum phosphorus at 2 h and significantly decreased flow-mediated dilation. Flow-mediated dilation correlated inversely with serum phosphorus. Taken together, these findings suggest that endothelial dysfunction mediated by acute postprandial hyperphosphatemia may contribute to the relationship between serum phosphorus level and the risk for cardiovascular morbidity and mortality.

  14. Studies of ion implanted thermally oxidised chromium

    International Nuclear Information System (INIS)

    Muhl, S.

    1977-01-01

    The thermal oxidation of 99.99% pure chromium containing precise amounts of foreign elements has been studied and compared to the oxidation of pure chromium. Thirty-three foreign elements including all of the naturally occurring rare earth metals were ion implanted into chromium samples prior to oxidation at 750 0 C in oxygen. The role of radiation induced damage, inherent in this doping technique, has been studied by chromium implantations at various energies and doses. The repair of the damage has been studied by vacuum annealing at temperatures up to 800 0 C prior to oxidation. Many of the implants caused an inhibition of oxidation, the greatest being a 93% reduction for 2 x 10 16 ions/cm 2 of praseodymium. The distribution of the implant was investigated by the use of 2 MeV alpha backscattering and ion microprobe analysis. Differences in the topography and structure of the chromic oxide on and off the implanted area were studied using scanning electron and optical microscopy. X-ray diffraction analysis was used to investigate if a rare earth-chromium compound of a perovskite-type structure had been formed. Lastly, the electrical conductivity of chromic oxide on and off the implanted region was examined at low voltages. (author)

  15. Short Implants: New Horizon in Implant Dentistry.

    Science.gov (United States)

    Jain, Neha; Gulati, Manisha; Garg, Meenu; Pathak, Chetan

    2016-09-01

    The choice of implant length is an essential factor in deciding the survival rates of these implants and the overall success of the prosthesis. Placing an implant in the posterior part of the maxilla and mandible has always been very critical due to poor bone quality and quantity. Long implants can be placed in association with complex surgical procedures such as sinus lift and bone augmentation. These techniques are associated with higher cost, increased treatment time and greater morbidity. Hence, there is need for a less invasive treatment option in areas of poor bone quantity and quality. Data related to survival rates of short implants, their design and prosthetic considerations has been compiled and structured in this manuscript with emphasis on the indications, advantages of short implants and critical biomechanical factors to be taken into consideration when choosing to place them. Studies have shown that comparable success rates can be achieved with short implants as those with long implants by decreasing the lateral forces to the prosthesis, eliminating cantilevers, increasing implant surface area and improving implant to abutment connection. Short implants can be considered as an effective treatment alternative in resorbed ridges. Short implants can be considered as a viable treatment option in atrophic ridge cases in order to avoid complex surgical procedures required to place long implants. With improvement in the implant surface geometry and surface texture, there is an increase in the bone implant contact area which provides a good primary stability during osseo-integration.

  16. Phytoextraction of excess soil phosphorus

    International Nuclear Information System (INIS)

    Sharma, Nilesh C.; Starnes, Daniel L.; Sahi, Shivendra V.

    2007-01-01

    In the search for a suitable plant to be used in P phytoremediation, several species belonging to legume, vegetable and herb crops were grown in P-enriched soils, and screened for P accumulation potentials. A large variation in P concentrations of different plant species was observed. Some vegetable species such as cucumber (Cucumis sativus) and yellow squash (Cucurbita pepo var. melopepo) were identified as potential P accumulators with >1% (dry weight) P in their shoots. These plants also displayed a satisfactory biomass accumulation while growing on a high concentration of soil P. The elevated activities of phosphomonoesterase and phytase were observed when plants were grown in P-enriched soils, this possibly contributing to high P acquisition in these species. Sunflower plants also demonstrated an increased shoot P accumulation. This study shows that the phytoextraction of phosphorus can be effective using appropriate plant species. - Crop plants such as cucumber, squash and sunflower accumulate phosphorus and thus can be used in the phytoextraction of excess phosphorus from soils

  17. Phytoextraction of excess soil phosphorus

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Nilesh C. [Department of Biology, Western Kentucky University, 1906 College Heights Boulevard 11080, Bowling Green, KY 42101-1080 (United States); Starnes, Daniel L. [Department of Biology, Western Kentucky University, 1906 College Heights Boulevard 11080, Bowling Green, KY 42101-1080 (United States); Sahi, Shivendra V. [Department of Biology, Western Kentucky University, 1906 College Heights Boulevard 11080, Bowling Green, KY 42101-1080 (United States)]. E-mail: shiv.sahi@wku.edu

    2007-03-15

    In the search for a suitable plant to be used in P phytoremediation, several species belonging to legume, vegetable and herb crops were grown in P-enriched soils, and screened for P accumulation potentials. A large variation in P concentrations of different plant species was observed. Some vegetable species such as cucumber (Cucumis sativus) and yellow squash (Cucurbita pepo var. melopepo) were identified as potential P accumulators with >1% (dry weight) P in their shoots. These plants also displayed a satisfactory biomass accumulation while growing on a high concentration of soil P. The elevated activities of phosphomonoesterase and phytase were observed when plants were grown in P-enriched soils, this possibly contributing to high P acquisition in these species. Sunflower plants also demonstrated an increased shoot P accumulation. This study shows that the phytoextraction of phosphorus can be effective using appropriate plant species. - Crop plants such as cucumber, squash and sunflower accumulate phosphorus and thus can be used in the phytoextraction of excess phosphorus from soils.

  18. Measurements of pp→π+d between 398 MeV and 572 MeV

    International Nuclear Information System (INIS)

    Aebischer, D.; Favier, B.; Greeniaus, L.G.; Hess, R.; Junod, A.; Lechanoine, C.; Nikles, J.-C.; Rapin, D.; Werren, D.W.

    1976-01-01

    The reaction pp→π + d was studied at incident proton energies of 398, 455, 497, 530 and 572 MeV. Measurements of dsigma/dΩ at 455 and 572 MeV show the presence of pion d-waves in the pion-deuteron system. Asymmetry measurements yield similar conclusions. Total cross-section measurements agree with recent fits to earlier data. (Auth.)

  19. Potential Phosphorus Mobilisation in Peat Soils

    DEFF Research Database (Denmark)

    Forsmann, Ditte M.; Kjærgaard, Charlotte

    2012-01-01

    Re-establishment of wetlands on peat soils containing phosphorus bound to iron(III)-oxides can lead to an undesirable phosphorus loss to the aquatic environment due to the reductive dissolution of iron(III)-oxides. Thus it is important to be able to assess the potential phosphorus mobilisation from...... peat soils before a re-establishment takes place. The potential phosphorus mobilisation from a peat soil depends not only on the geochemical characteristics but also on the redox conditions, the hydrological regime in the area as well as the hydro-physical properties of the soil. The hypothesis...... for this study is (i) the release of phosphorus in peat is controlled by the geochemistry; (ii) the mobilisation of phosphorus is controlled by both geochemistry and hydro-physics of the soil. For this study, 10 Danish riparian lowland areas with peat soil were selected based on their geochemical characteristics...

  20. Spin properties of black phosphorus and phosphorene, and their prospects for spincalorics

    Science.gov (United States)

    Kurpas, Marcin; Gmitra, Martin; Fabian, Jaroslav

    2018-05-01

    Semiconducting black phosphorus attracts a lot of attention due to its extraordinary electronic properties. Its application to spincalorics requires the knowledge about the spin and thermal properties. Here, we describe first principles calculations of the spin–orbit coupling and spin scattering in phosphorene and bulk black phosphorus. We find that the intrinsic spin–orbit coupling is of the order of 20 meV for the valence and conduction band, both for phosphorene and bulk black phosphorus, and induces spin mixing with the probability b2 ≈ 10-5 –10‑4. A strong anisotropy of b 2 is observed. The calculated Elliott–Yafet spin relaxation times reach nanoseconds for realistic values of the momentum relaxation times. The extrinsic spin–orbit coupling, enabling the D’yakonov–Perel’ spin relaxation mechanism, is studied for phosphorene by application of a transverse electric field. We observe a strong anisotropy of the extrinsic effects for the valence band and much weaker for the conduction band. It is shown, that for small enough electric fields the spin relaxation is dominated by the Elliott–Yafet mechanism, while the D’yakonov–Perel’ matters for higher electric fields. Our theoretical results stay in a good agreement with the experimental findings, and indicates that long spin lifetimes in black phosphorus and phosphorene makes them prospective materials for spincalorics and spintronics.

  1. Phosphorus analysis in milk by activation with fast neutrons using Van de Graaff accelerator

    International Nuclear Information System (INIS)

    Berreta, Jose Roberto; Cunha, Ieda Irma Lamas

    1996-01-01

    Determination of phosphorus in milk by activation using 14 MeV neutrons generated by a Van de Graaff accelerator is related. Cyclic and conventional irradiations were performed. In both cases, the variation of the neutron flux was followed by a BF 3 detector, and mathematical equations were applied to the normalization of the counting rates. Results for phosphorus analysis in IAEA (International Atomic Energy Agency) reference material A-11 are (0.9 ± 0.1) % by conventional irradiation and (1.0±0.1) % by cyclic irradiation and the detection limits were of 0.12 mg and 0.04 mg, respectively, in 100 mg of sample. (author)

  2. Creep tests of AISI 316 stainless steel irradiated by alpha particles of 28 MeV

    International Nuclear Information System (INIS)

    Segura, E.; Lucki, G.

    1986-01-01

    He-embrittlement effect in AISI 316 SS type throught creep tests performed with annealed and cold worked thin specimens is analized. Measurements were carried out at 700 and 750 0 C, stress of 100 MPa in vacuum better than 10 -5 torr. The He-implantations were made with the cyclotron CV-28 IPEN-CNEN/SP. Using an alpha-particle beam of 28 MeV, with concentration of 26 appm. From the valves of rupture deformation, epsilon sub(R), and rupture time, t sub(R), it was verified that he had a great effect on the operational life and ductility of this material. (Author) [pt

  3. Implantation, recoil implantation, and sputtering

    International Nuclear Information System (INIS)

    Kelly, R.

    1984-01-01

    Underlying ion-beam modification of surfaces is the more basic subject of particle-surface interaction. The ideas can be grouped into forward and backward features, i.e. those affecting the interior of the target and those leading to particle expulsion. Forward effects include the stopping of the incident particles and the deposition of energy, both governed by integral equations which are easily set up but difficult to solve. Closely related is recoil implantation where emphasis is placed not on the stopping of the incident particles but on their interaction with target atoms with resulting implantation of these atoms. Backward effects, all of which are denoted as sputtering, are in general either of collisional, thermal, electronic, or exfoliational origin. (Auth.)

  4. Fertilizer phosphorus in some Finnish soils

    Directory of Open Access Journals (Sweden)

    Armi Kaila

    1961-01-01

    Full Text Available In the present paper it is tried to trace the fate of fertilizer phosphorus in soil by comparing the analyses of soils from treated and untreated plots of field trials. This indirect approach cannot be expected to provide exact values, but it is likely to give an approximate answer. The results reported above do not in any marked degree change our present conception of the forms in which fertilizer phosphorus accumulates in soils. In the acid soils studied (pH 4—6.4 in 0.02 N CaCl2 superphosphate tended to increase the fractions which were extracted by NH4F or NaOH. Hyperphosphate phosphorus was mostly found in the acid-soluble fraction. During a longer period of dressing with phosphate an increase in the organic phosphorus content of a peat soil could be detected. In the incubation experiments the mineralization of organic phosphorus occurred at a higher rate in the samples from the plots treated with superphosphate than in those from the untreated one. It might be supposed that the organic phosphorus mineralized mainly originated from the plant residues. It seems that the fractionation method developed by CHANG and JACKSON (4 for the estimation of discrete forms of soil phosphorus is not quite satisfactory for tracing the fertilizer phosphorus in soils recently dressed with phosphates. In particular, it may be fallacious to conclude that the fraction extracted by NH4F would only represent phosphorus bound to aluminium and its compounds. At least in the absence of soil, a large part of phosphorus in dicalcium phosphate dihydrate falls into this fraction, and also a small amount of hyperphosphate phosphorus may be found in it. The test values for »available» phosphorus showed the effect of fertilizers in accordance with previous observations (9, 13. Acetic acid soluble P revealed the treatment with hyperphosphate, but only slightly the application of superphosphate. The test value for the sorbed P of BRAY and KURTZ (2, or phosphorus

  5. Phosphorus and Nutrition in Chronic Kidney Disease

    Directory of Open Access Journals (Sweden)

    Emilio González-Parra

    2012-01-01

    Full Text Available Patients with renal impairment progressively lose the ability to excrete phosphorus. Decreased glomerular filtration of phosphorus is initially compensated by decreased tubular reabsorption, regulated by PTH and FGF23, maintaining normal serum phosphorus concentrations. There is a close relationship between protein and phosphorus intake. In chronic renal disease, a low dietary protein content slows the progression of kidney disease, especially in patients with proteinuria and decreases the supply of phosphorus, which has been directly related with progression of kidney disease and with patient survival. However, not all animal proteins and vegetables have the same proportion of phosphorus in their composition. Adequate labeling of food requires showing the phosphorus-to-protein ratio. The diet in patients with advanced-stage CKD has been controversial, because a diet with too low protein content can favor malnutrition and increase morbidity and mortality. Phosphorus binders lower serum phosphorus and also FGF23 levels, without decreasing diet protein content. But the interaction between intestinal dysbacteriosis in dialysis patients, phosphate binder efficacy, and patient tolerance to the binder could reduce their efficiency.

  6. Towards global phosphorus security: A systems framework for phosphorus recovery and reuse options

    NARCIS (Netherlands)

    Cordell, D.; Rosemarin, A.; Schroder, J.J.; Smit, A.L.

    2011-01-01

    Human intervention in the global phosphorus cycle has mobilised nearly half a billion tonnes of the element from phosphate rock into the hydrosphere over the past half century. The resultant water pollution concerns have been the main driver for sustainable phosphorus use (including phosphorus

  7. Spectroscopy of bound multi exciton complexes and deep centers in implanted and annealed silicon

    International Nuclear Information System (INIS)

    Babich, V.M.; Valakh, M.Ya.; Kovalchuk, V.B.; Rudko, G.Yu.; Shakhrajchuk, N.I.

    1989-01-01

    The change of silicon properties relevant to device physics caused by ion implantation and thermal annealing is studied. It is shown that in boron-doped p-Si the increase of P + ions implantation doses from 10 12 to 10 14 ions/cm 2 lead to a decrease of the broadening of boron bound exciton bands. This behaviour is caused by implantation-induced disordering of the lattice. The subsequent thermal annealing restores the intensity and the halfwidth of the above-mentioned bands and initiates the increase of the bands which correspond to excitons bond on the implanted phosphorus ions. Measurements of phosphorus bound exciton band intensities are applicable to the characterization of the process of phosphorus activation. Analysis of low energy region of luminescence spectra of heat treated samples shows that there is a correlation between the process of implanted phosphorus activation and the one of radiation defects transformation. The influence of germanium doping on the generation of thermal donors by means of spectroscopy of deep centres luminescence has been investigated. It is shown that the introduction of germanium in concentrations of 10 19 -10 20 cm -3 effectively suppresses the generation of thermal donors and deep centres under investigation. (author)

  8. 14 MeV proton activation analysis

    International Nuclear Information System (INIS)

    Constantinescu, B.; Ivanov, E.; Plostinaru, D.; Popa-Nemoiu, A.; Pascovichi, G.

    1985-01-01

    A fast nuclear nondestructive method for protein analysis using the 14 MeV proton activation has been developed. The total nitrogen content was measured through the reaction: 14 N (p,n) 14 O, (Tsub(1/2)=71 s). The 14 O activity was detected by means of its characteristic 2.312 MeV gamma-ray line with a NaI(Tl) detector. For a fast determination of a large number of samples a mechanized sistem reacting a rate of one sample per minute has been developed. The laboratory electronics comprises a multichannel analyser, a PDP computer and an electronic module comtroller. Comparison of the results obtained by the method described and the classical Kjeldal technique for samples of various cereal grains (soya bean seads, wheat, barley and corn) showed good correlation. A problem of the analysis of the whole protein region on corn and soya-bean seads, where this region is thicker (0,2 - 2 mm), is mentioned. In this case flour was proposed to be used to obtain a protein homogeneous sample and the irradiaton dose for a sample was about 33,000 Gy, mainly (99%) from protons (27 s x 100 nA x 14 MeV)

  9. Dental Implant Surgery

    Science.gov (United States)

    ... here to find out more. Dental Implant Surgery Dental Implant Surgery Dental implant surgery is, of course, ... to find out more. Wisdom Teeth Management Wisdom Teeth Management An impacted wisdom tooth can damage neighboring ...

  10. Cochlear Implant

    Directory of Open Access Journals (Sweden)

    Mehrnaz Karimi

    1992-04-01

    Full Text Available People with profound hearing loss are not able to use some kinds of conventional amplifiers due to the nature of their loss . In these people, hearing sense is stimulated only when the auditory nerve is activated via electrical stimulation. This stimulation is possible through cochlear implant. In fact, for the deaf people who have good mental health and can not use surgical and medical treatment and also can not benefit from air and bone conduction hearing aids, this device is used if they have normal central auditory system. The basic parts of the device included: Microphone, speech processor, transmitter, stimulator and receiver, and electrode array.

  11. Rutherford backscatter measurements on tellurium and cadmium implanted gallium arsenide

    International Nuclear Information System (INIS)

    Bell, E.C.

    1979-10-01

    The primary aim of the work described in this thesis was to examine implanted layers of the dopant impurities cadmium and tellurium in gallium arsenide and to experimentally assess their potential for producing electrically active layers. 1.5 MeV Rutherford backscattering measurements of lattice disorder and atom site location have been used to assess post implantation thermal annealing and elevated temperature implantations to site the dopant impurities on either gallium or arsenic lattice positions in an otherwise undisordered lattice. Pyrolitically deposited silicon dioxide was used as an encapsulant to prevent thermal dissociation of the gallium arsenide during annealing. It has been shown that high doses of cadmium and tellurium can be implanted without forming amorphous lattice disorder by heating the gallium arsenide during implantation to relatively low temperatures. Atom site location measurements have shown that a large fraction of a tellurium dose implanted at 180 0 C is located on or near lattice sites. Channeled backscatter measurements have shown that there is residual disorder or lattice strain in gallium arsenide implanted at elevated temperatures. The extent of this disorder has been shown to depend on the implanted dose and implantation temperature. The channeling effect has been used to measure annealing of the disorder. (author)

  12. Microstructure evolution in carbon-ion implanted sapphire

    International Nuclear Information System (INIS)

    Orwa, J. O.; McCallum, J. C.; Jamieson, D. N.; Prawer, S.; Peng, J. L.; Rubanov, S.

    2010-01-01

    Carbon ions of MeV energy were implanted into sapphire to fluences of 1x10 17 or 2x10 17 cm -2 and thermally annealed in forming gas (4% H in Ar) for 1 h. Secondary ion mass spectroscopy results obtained from the lower dose implant showed retention of implanted carbon and accumulation of H near the end of range in the C implanted and annealed sample. Three distinct regions were identified by transmission electron microscopy of the implanted region in the higher dose implant. First, in the near surface region, was a low damage region (L 1 ) composed of crystalline sapphire and a high density of plateletlike defects. Underneath this was a thin, highly damaged and amorphized region (L 2 ) near the end of range in which a mixture of i-carbon and nanodiamond phases are present. Finally, there was a pristine, undamaged sapphire region (L 3 ) beyond the end of range. In the annealed sample some evidence of the presence of diamond nanoclusters was found deep within the implanted layer near the projected range of the C ions. These results are compared with our previous work on carbon implanted quartz in which nanodiamond phases were formed only a few tens of nanometers from the surface, a considerable distance from the projected range of the ions, suggesting that significant out diffusion of the implanted carbon had occurred.

  13. Phosphorus-32: practical radiation protection

    International Nuclear Information System (INIS)

    Ballance, P.E.; Morgan, J.

    1987-01-01

    This monograph offers practical advice to Radiation Protection Advisors, Radiation Protection Supervisors and Research Supervisors, together with research workers, particularly those in the field of molecular biological research. The subject is dealt with under the following headings: physical properties, radiation and measurement methods, radiation units, phosphorus metabolism and health risks, protection standards and practical radiation protection, administrative arrangements, accidents, decontamination, emergency procedures, a basic written system for radiochemical work, with specialised recommendations for 32 P, and guidance notes of accident situations involving 32 P. (U.K.)

  14. Complications after cardiac implantable electronic device implantations

    DEFF Research Database (Denmark)

    Kirkfeldt, Rikke Esberg; Johansen, Jens Brock; Nohr, Ellen Aagaard

    2013-01-01

    Complications after cardiac implantable electronic device (CIED) treatment, including permanent pacemakers (PMs), cardiac resynchronization therapy devices with defibrillators (CRT-Ds) or without (CRT-Ps), and implantable cardioverter defibrillators (ICDs), are associated with increased patient...

  15. Global Fertilizer and Manure, Version 1: Phosphorus Fertilizer Application

    Data.gov (United States)

    National Aeronautics and Space Administration — The Phosphorus Fertilizer Application dataset of the Global Fertilizer and Manure, Version 1 Data Collection represents the amount of phosphorus fertilizer nutrients...

  16. Sustainable use of phosphorus: a finite resource.

    Science.gov (United States)

    Scholz, Roland W; Ulrich, Andrea E; Eilittä, Marjatta; Roy, Amit

    2013-09-01

    Phosphorus is an essential element of life and of the modern agricultural system. Today, science, policy, agro-industry and other stakeholder groups are increasingly concerned about the sustainable use of this resource, given the dissipative nature of phosphorus and difficulties in assessing, evaluating, and coping with phosphorus pollution in aquatic and terrestrial systems. We argue that predictions about a forthcoming peak, followed by a quick reduction (i.e., physical phosphate rock scarcity) are unreasoned and stress that access to phosphorus (economic scarcity) is already, and may increasingly become critical, in particular for smallholders farmers in different parts of the world. The paper elaborates on the design, development, goals and cutting-edge contributions of a global transdisciplinary process (i.e. mutual learning between science and society including multiple stakeholders) on the understanding of potential contributions and risks related to the current mode of using phosphorus on multiple scales (Global TraPs). While taking a global and comprehensive view on the whole phosphorus-supply chain, Global TraPs organizes and integrates multiple transdisciplinary case studies to better answer questions which inform sustainable future phosphorus use. Its major goals are to contribute to four issues central to sustainable resource management: i) long-term management of biogeochemical cycles, in particular the challenge of closing the phosphorus cycle, ii) achieving food security, iii) avoiding environmental pollution and iv) sustainability learning on a global level by transdisciplinary processes. Copyright © 2013 Elsevier B.V. All rights reserved.

  17. Implantation of β-emitters on biomedical implants: 32 P isotropic ion implantation using a coaxial plasma reactor

    International Nuclear Information System (INIS)

    Fortin, M.A.; Paynter, R.W.; Sarkissian, A.; Stansfield, B.L.; Terreault, B.; Dufresne, V.

    2003-01-01

    The development of endovascular brachytherapy and the treatment of certain types of cancers (liver, lung, prostate) often require the use of beta-emitters, sometimes in the form of radioisotope-implanted devices. Among the most commonly used isotopes figures 32 P, a pure beta-emitter (maximum energy: 1.7 MeV), of which the path in biological tissues is of a few cm, restricting the impact of electron bombardment to the immediate environment of the implant. Several techniques and processes have been tried to elaborate surfaces and devices showing strongly bonded, or implanted 32 P. Anodizing, vapor phase deposition, grafting of oligonucleotides, as well as ion implantation processes have been investigated by several research groups as methods to implant beta-radioisotopes into surfaces. A coaxial plasma reactor was developed at INRS to implant radioisotopes into cylindrical metallic objects, such as coronary stents commonly used in angioplasty procedures. The dispersion of 32 P atoms on the interior surfaces of the chamber can be investigated using radiographs, contributing to image the plasma ion transport mechanisms that guide the efficiency of the implantation procedure. The amount of radioactivity on the wall liner, on the internal components, and on the biomedical implants are quantified using a surface barrier detector. A comparative study establishes a relationship between the gray scale of the radiographs, and dose measurements. A program was developed to convert the digitized images into maps showing surface dose density in mCi/cm 2 . An integration process allows the quantification of the doses on the walls and components of the reactor. Finally, the resulting integral of the 32 P dose is correlated to the initial amount of radioactivity inserted inside the implanter before the dismantling procedure. This method could be introduced as a fast and reliable way to test, qualify and assess the amount of radioactivity present on the as-produced implants

  18. Determination of phosphorus using derivative neutron activation

    International Nuclear Information System (INIS)

    Scindia, Y.M.; Nair, A.G.C.; Reddy, A.V.R.; Manohar, S.B.

    2002-01-01

    For the determination of phosphorus in different matrices, the derivative neutron activation analysis is especially applicable to aqueous samples, since the conventional neutron activation analysis is not useful for the determination of phosphorus. Phosphorus when reacted with ammonium molybdate 4 hydrate and ammonium metavanadate forms molybdo vanado phosphoric acid. This complex is preconcentrated by extracting into methyl isobutyl ketone. The organic phase containing the molybdo vanado phosphoric acid is neutron activated and the phosphorus is determined through the activation product of 52 V. Preparation of this complex, its stoichiometry, application to trace level determination of phosphorus and improved detection limit are discussed. This method was applied for the analysis of industrial effluent samples. (author)

  19. Adaptive Evolution of Phosphorus Metabolism in Prochlorococcus

    DEFF Research Database (Denmark)

    Casey, John R; Mardinoglu, Adil; Nielsen, Jens

    2016-01-01

    Inorganic phosphorus is scarce in the eastern Mediterranean Sea, where the high-light-adapted ecotype HLI of the marine picocyanobacterium Prochlorococcus marinus thrives. Physiological and regulatory control of phosphorus acquisition and partitioning has been observed in HLI both in culture...... and in the field; however, the optimization of phosphorus metabolism and associated gains for its phosphorus-limited-growth (PLG) phenotype have not been studied. Here, we reconstructed a genome-scale metabolic network of the HLI axenic strain MED4 (iJC568), consisting of 568 metabolic genes in relation to 794...... through drastic depletion of phosphorus-containing biomass components but also through network-wide reductions in phosphate-reaction participation and the loss of a key enzyme, succinate dehydrogenase. These alterations occur despite the stringency of having relatively few pathway redundancies...

  20. Radioactive implants for medical applications; Radioaktive Implantate fuer medizinische Anwendungen

    Energy Technology Data Exchange (ETDEWEB)

    Schubert, M.

    2008-07-01

    dosimetry of 1-2 MeV electrons, the challenge arises from the short range (few millimeters only) in the tissue and the resulting steep dose decay. Therefore a Monte Carlo Simulation has been developed, based on the library GEANT4. In this dose planning system, apart form the possibility of schematic geometry, calculations based on patients computer tomography data have been made possible. For the validation of this simulation, a system for three-dimensional dosimetric measurements has been developed by means of a plastic scintillator in a water phantom. The simulations could be reproduced within a deviation of 10%. Furthermore, to establish a quality control for each implant produced, an electron counter system has been developed to measure activity. The calibration has been carried out by liquid scintillation counting. Additionally, Monte Carlo Simulations have been performed to allow for calibration of implant materials, which can hardly be diluted such as the used materials silicone or nickel titanium alloys. The measured changes of the material properties of silicone and the bioabsorbable polymer PLGA, which occur due to the production process, were reasonable, confirming the suitability as an implant material, in particular for the long-lasting fixation of the radionuclide. The implants have been tested in the context of two preclinical studies: (i) Otorhinolaryngology faces problems with congested paranasal sinuses, which entail infections. By the implantation of a radioactive silicone stent with an irradiation time of 7 days, it has been shown that an artificially created opening can be kept open on a long-term basis. (ii) In the field of ophthalmology the glaucoma is a wide-spread disease, which can cause blindness, resulting from an elevated intra-ocular pressure. However, it can be treated by a surgical intervention. For the first time, a bioabsorbable, radioactive implant has been used that is suitable to keep the artificially created drainage open, and hence, is

  1. Phosphorus Regulation in Chronic Kidney Disease.

    Science.gov (United States)

    Suki, Wadi N; Moore, Linda W

    2016-01-01

    Serum phosphorus levels stay relatively constant through the influence of multiple factors-such as parathyroid hormone, fibroblast growth factor 23, and vitamin D-on the kidney, bone, and digestive system. Whereas normal serum phosphorus ranges between 3 mg/dL to 4.5 mg/dL, large cross-sectional studies have shown that even people with normal kidney function are sometimes found to have levels ranging between 1.6 mg/dL and 6.2 mg/dL. While this may partially be due to diet and the factors mentioned above, total understanding of these atypical ranges of serum phosphorus remains uncertain. Risks for bone disease are high in people aged 50 and older, and this group comprises a large proportion of people who also have chronic kidney disease. Consuming diets low in calcium and high in phosphorus, especially foods with phosphate additives, further exacerbates bone turnover. Existing bone disease increases the risk for high serum phosphorus, and higher serum phosphorus has been associated with increased adverse events and cardiovascular-related mortality both in people with chronic kidney disease and in those with no evidence of disease. Once kidney function has deteriorated to end-stage disease (Stage 5), maintaining normal serum phosphorus requires dietary restrictions, phosphate-binding medications, and dialysis. Even so, normal serum phosphorus remains elusive in many patients with Stage 5 kidney disease, and researchers are testing novel targets that may inhibit intestinal transport of phosphorus to achieve better phosphate control. Protecting and monitoring bone health should also aid in controlling serum phosphorus as kidney disease advances.

  2. Bronx River bed sediments phosphorus pool and phosphorus compound identification

    Science.gov (United States)

    Wang, J.; Pant, H. K.

    2008-12-01

    Phosphorus (P) transport in the Bronx River degraded water quality, decreased oxygen levels, and resulted in bioaccumulation in sediment potentially resulting in eutrophication, algal blooms and oxygen depletion under certain temperature and pH conditions. The anthropogenic P sources are storm water runoff, raw sewage discharge, fertilizer application in lawn, golf course and New York Botanical Garden; manure from the Bronx zoo; combined sewoverflows (CSO's) from parkway and Hunts Point sewage plant; pollutants from East River. This research was conducted in the urban river system in New York City area, in order to control P source, figure out P transport temporal and spatial variations and the impact on water quality; aimed to regulate P application, sharing data with Bronx River Alliance, EPA, DEP and DEC. The sediment characteristics influence the distribution and bioavailbility of P in the Bronx River. The P sequential extraction gave the quantitative analysis of the P pool, quantifying the inorganic and organic P from the sediments. There were different P pool patterns at the 15 sites, and the substantial amount of inorganic P pool indicated that a large amount P is bioavailable. The 31P- NMR (Nuclear Magnetic Resonance Spectroscopy) technology had been used to identify P species in the 15 sites of the Bronx River, which gave a qualitative analysis on phosphorus transport in the river. The P compounds in the Bronx River bed sediments are mostly glycerophophate (GlyP), nucleoside monophosphates (NMP), polynucleotides (PolyN), and few sites showed the small amount of glucose-6-phosphate (G6P), glycerophosphoethanoamine (GPEA), phosphoenopyruvates (PEP), and inosine monophosphate (IMP). The land use spatial and temporal variations influence local water P levels, P distributions, and P compositions.

  3. Phosphorus metabolism and estimation of phosphorus requirements for sheep

    International Nuclear Information System (INIS)

    Louvandini, H.; Vitti, D.M.S.S.

    1996-01-01

    The main objective of the present work was to determine the effects of different dietary phosphorus (P) levels on endogenous faecal loss and to estimate the minimum daily requirement of P for sheep. The study was conducted with 24 Suffolk sheep which received a basic diet consisting of a hay-concentrate mixture. The treatment consisted of different amounts of bone meal, added to the basic diet, so as to obtain supplementary P levels of 0, 2 and 3 g/day. Twenty-one days after the introduction of the experimental diet, 7.4 MBq radioactive P ( 32 P) was injected in the left jugular vein of each sheep and blood, feces and urine were collected daily for 8 days at 24-hour intervals. The samples were analysed for inorganic P and for radioactive specific activities. Mean endogenous faecal losses of P were 10.00, 31.79, 39.35 and 38.06 mg/kg live weight (LW) per day in sheep supplemented with 0, 1, 2 and 3 g respectively. A positive linear relation ship was observed between endogenous faecal loss and consumed P, indicating that this loss was linked to dietary P. Total P excretion in the faeces, as well as P absorption, retention urinary excretion and salivary secretion were also directly related to P intake, as part of the mechanism of homeostatic control of organism animal. The minimum endogenous faecal loss for zero P intake, calculated by interpolation, was 8.27 mg/kg LW per day, and for zero balance, the calculated phosphorus consumption was 21.36 mg/kg LW per day. (author)

  4. Recrystallization behaviour and electrical properties of germanium ion implanted polycrystalline silicon films

    International Nuclear Information System (INIS)

    Kang, Myeon-Koo; Matsui, Takayuki; Kuwano, Hiroshi

    1996-01-01

    The recrystallization behaviour of undoped and phosphorus-doped polycrystalline silicon films amorphized by germanium ion implantation at doses ranging from 1 x 10 15 to 1 x 10 16 cm -2 are investigated, and the electrical properties of phosphorus-doped films after recrystallization are studied. The phosphorus doping concentration ranges from 3 x 10 18 to 1 x 10 20 cm -3 . It is found that the nucleation rate decreases for undoped films and increases for phosphorus-doped films with increasing germanium dose; the growth rates decrease for both doped and undoped films. The decrease in nucleation rate is caused by the increase in implantation damage. The decrease in growth rate is considered to be due to the increase in lattice strain. The grain size increases with germanium dose for undoped films, but decreases for phosphorus-doped films. The dependence of the electrical properties of the recrystallized films as a function of phosphorus doping concentration with different germanium doses can be explained in terms of the grain size, crystallinity and grain boundary barrier height. (Author)

  5. Retrograde peri-implantitis

    Directory of Open Access Journals (Sweden)

    Mohamed Jumshad

    2010-01-01

    Full Text Available Retrograde peri-implantitis constitutes an important cause for implant failure. Retrograde peri-implantitis may sometimes prove difficult to identify and hence institution of early treatment may not be possible. This paper presents a report of four cases of (the implant placed developing to retrograde peri-implantitis. Three of these implants were successfully restored to their fully functional state while one was lost due to extensive damage. The paper highlights the importance of recognizing the etiopathogenic mechanisms, preoperative assessment, and a strong postoperative maintenance protocol to avoid retrograde peri-implant inflammation.

  6. Correlation between substrate bias, growth process and structural properties of phosphorus incorporated tetrahedral amorphous carbon films

    International Nuclear Information System (INIS)

    Liu Aiping; Zhu Jiaqi; Han Jiecai; Wu Huaping; Jia Zechun

    2007-01-01

    We investigate the growth process and structural properties of phosphorus incorporated tetrahedral amorphous carbon (ta-C:P) films which are deposited at different substrate biases by filtered cathodic vacuum arc technique with PH 3 as the dopant source. The films are characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy, Raman spectroscopy, residual stress measurement, UV/VIS/NIR absorption spectroscopy and temperature-dependent conductivity measurement. The atomic fraction of phosphorus in the films as a function of substrate bias is obtained by XPS analysis. The optimum bias for phosphorus incorporation is about -80 V. Raman spectra show that the amorphous structures of all samples with atomic-scaled smooth surface are not remarkably changed when PH 3 is implanted, but some small graphitic crystallites are formed. Moreover, phosphorus impurities and higher-energetic impinging ions are favorable for the clustering of sp 2 sites dispersed in sp 3 skeleton and increase the level of structural ordering for ta-C:P films, which further releases the compressive stress and enhances the conductivity of the films. Our analysis establishes an interrelationship between microstructure, stress state, electrical properties, and substrate bias, which helps to understand the deposition mechanism of ta-C:P films

  7. The 200 MeV cyclotron facility

    International Nuclear Information System (INIS)

    1987-01-01

    Beams of protons with several different energies have now been successfully transported between the injector cyclotron SPC1 and the SSC. Some small modifications to the placement of steering magnets and diagnostic equipment have been made in the light of our operational experience, which should improve the ease of tuning this beamline. Proton beams up to 200 MeV in energy have been transported to the experimental areas, where experiments in nuclear physics have been successful conducted. Three of the experimental beamlines are now in operation. Beams of 66 MeV protons have also been transported to targets in the isotope production vault, without difficulty. Field mapping of the remaining quadrupoles on site has been completed. Installation of and alignment of magnets up to the beam swinger is also complete, although the beam tube itself, plus vacuum and diagnostic equipment must still be tackled. The beam swinger has been designed and detailed in the drawing office, and is now being manufactured locally. The beamline elements for the sepctrometer beamline remain to be purchased. A personal computer has been purchased for controlling the field-mapping equipment for the spectrometer magnets, which are being manufactured in this country. A number of computer programs have been written for conversion of calibrated quadrupole and dipole magnet field data to absolute current values for the control system. Other programs permit diagnostic measurements of beam profiles to be used to calculated the beam emittance, or to set steering magnets so that the beam is correctly aligned

  8. HIGH ENERGY RADIOGRAPHY-1-30 Mev

    Energy Technology Data Exchange (ETDEWEB)

    Bly, James H.

    1963-10-15

    From 1963 American Society of Metals/Materials Show, Cleveland, Oct. 1963. A survey of the field of radiographic inspection of thick sections, at one million volts energy or more, shows that this field has become a major branch of radiographic testing. More than a dozen models of x-ray generators are now commercially available in this field, over the range from 1 to 31 Mev, with outputs up to more than two orders of magnitude greater than can be obtained from radiographic isotope sources, and with smaller spot size. A study of the radiographic characteristics of x rays in this region shows that energies available cover the range of minimum absorption and scattering for most materials and approach this range for solid propellant; at higher energies severe coverage restrictions are imposed; output powers on small spots are near the limits of present target technology. It would appear that some degree of technological maturity'' has been achieved. Radiographic technique at 1 to 30 Mev is straightforward, following the same basic principles as in conventional radiography. Specialized aspects of technique are individually discussed. The wellknown 1 and 2 million volt equlpments are supplemented by a wide variety of higher-energy machines, with energy and output ratings to satisfy almost any radiographic need. Some examples are epitomized, and a brief discussion of possible future developments is presented. (auth)

  9. Study of the /sup 12/N 2. 43 MeV level. [Differential cross sections; 44 MeV /sup 3/He; 52 MeV p

    Energy Technology Data Exchange (ETDEWEB)

    Cecil, F E; Shepard, J R; Sercely, R R; Peterson, R J [Colorado Univ., Boulder (USA). Nuclear Physics Lab.; King, N S.P. [California Univ., Davis (USA). Crocker Nuclear Lab.

    1976-10-11

    The differential cross sections have been measured for the reactions /sup 12/C(/sup 3/He, /sup 3/He')/sup 12/C(17.77 MeV 0/sup +/ T = 1) and /sup 12/C(/sup 3/He, t)/sup 12/N(2.43 MeV) at Esub(/sup 3/He) = 44 MeV. The similar shapes of the angular distributions and the relative magnitudes of the cross sections suggest that the /sup 12/N 2.43 MeV level is the 0/sup +/ T = 1 analog to the /sup 12/C 17.77 MeV level. The reaction /sup 14/N(p, t)/sup 12/N(2.43 MeV) at Esub(p) = 52 MeV is also studied. The strength with which this level is excited in this reaction is consistent with reasonable two-step calculations assuming the 2.43 MeV level to have Jsup(..pi..) = 0/sup +/.

  10. Individual titanium zygomatic implant

    Science.gov (United States)

    Nekhoroshev, M. V.; Ryabov, K. N.; Avdeev, E. V.

    2018-03-01

    Custom individual implants for the reconstruction of craniofacial defects have gained importance due to better qualitative characteristics over their generic counterparts – plates, which should be bent according to patient needs. The Additive Manufacturing of individual implants allows reducing cost and improving quality of implants. In this paper, the authors describe design of zygomatic implant models based on computed tomography (CT) data. The fabrication of the implants will be carried out with 3D printing by selective laser melting machine SLM 280HL.

  11. Phosphorus determination by various substoichiometric methods

    International Nuclear Information System (INIS)

    Shigematsu, Toshio; Kudo, Kiyoshi

    1981-01-01

    Various substoichiometric methods have been classified from a view point of the substoichiometric separation. Based upon the substoichiometric separation, phosphorus was determined substoichiometrically by a direct method, a method of carrier amount variation and a comparison method for the irradiated sample. The direct method was applied to the determination of phosphorus in orchard leaves (SRM-1571). The analytical value was 0.23 +- 0.01%. Phosphorus in orchard leaves and spinach (SRM-1570) was determined by an ordinary method which devided the sample into equal parts in the method of carrier amount variation. Analytical values of orchard leaves and spinach were 0.22 +- 0.02% and 0.56 +- 0.04%, respectively. Moreover, a new modification of the method of carrier amount variation was studied by the use of various standard samples such as red phosphorus, spinach and orchard leaves. These standard samples were also employed for the determination of phosphorus in orchard leaves and 0.21 +- 0.01% was obtained. All these results are in good agreement with the value reported by NBS. The comparison method was applied to the determination of phosphorus in a semiconductor silicon single crystal. As a result of the correction of 32 P activity induced by the secondary nuclear reaction of 30 Si, 7.9 ppb and 3.1 ppb were obtained for the phosphorus concentrations in the single crystal silicon. (author)

  12. Influence of integrated phosphorus supply and plant growth ...

    African Journals Online (AJOL)

    To guarantee a sufficient phosphorus supply for plants, a rapid and permanent mobilization of phosphorus from the labile phosphorus fractions is necessary, because phosphorus concentrations in soil solution are generally low. Several plant growth-promoting rhizobacteria (PGPR) have shown potential to enhance ...

  13. Prevalence of phosphorus containing food additives in grocery stores

    Directory of Open Access Journals (Sweden)

    Janeen B. Leon

    2012-06-01

    In conclusion, phosphorus additives are commonly present in groceries and contribute significantly to the phosphorus content of foods. Moreover, phosphorus additive foods are less costly than additive-free foods. As a result, phosphorus additives may be an important contributor to hyperphosphatemia among persons with chronic kidney disease

  14. Measurement of phosphorus in metals by RNAA

    International Nuclear Information System (INIS)

    Paul, R.L.

    2000-01-01

    An RNAA procedure has been developed for measurement of low-level phosphorus in metals. Samples are irradiated at a neutron flux of 2.7 x 10 13 n x cm -2 x s -1 then mixed with carrier and dissolved in acid. After chemical separation and purification of the phosphorus and gravimetric determination of carrier yield, 32 P is determined using a beta proportional counter. The detection limit for a 0.1 g sample irradiated for 30 minutes is 5 μg/kg. The method has been used to determine 6.4 ± 0.6 mg/kg phosphorus is SRM 2175 refractory alloy. (author)

  15. Radiochemical analysis of phosphorus in milk samples

    International Nuclear Information System (INIS)

    Oliveira, R.M. de; Cunha, I.I.L.

    1991-01-01

    The determination of phosphorus in milk samples by thermal neutron activation analysis employing radiochemical separation is described. The radiochemical separation consists of the simultaneous irradiation of samples and standards, dissolution of the milk samples in a perchloric acid and nitric acid mixture, addition of zinc hold-back carrier, precipitation of phosphorus as ammonium phospho molybdate (A.M.P.) and sample counting in a Geiger-Mueller detector. The analysis sources of error were studied and the established method was applied to phosphorus analyses in commercial milk samples. (author)

  16. Use of Phosphorus Isotopes for Improving Phosphorus Management in Agricultural Systems

    International Nuclear Information System (INIS)

    2016-10-01

    Phosphorus is an essential element in plant, human and animal nutrition. Soils with low levels of phosphorus are widespread in many regions of the world, and the deficiency limits plant growth and reduces crop production and food quality. This publication provides comprehensive and up to date information on several topics related to phosphorus in soil–plant systems, in agricultural systems and in the environment. It presents the theoretical background as well as practical information on how to use nuclear and radioisotope tracer techniques in both laboratory and greenhouse experiments to assess soil phosphorus forms and plant-available soil phosphorus pools, and to understand the cycling processes in soil–plant systems. The publication focuses on practical applications of radiotracer techniques and can serve as resource material for research projects on improving sustainable phosphorus management in agricultural systems and as practical guidance on the use of phosphate isotopes in soil–plant research

  17. Surface PIXE analysis of phosphorus in a thin SiO2 (P, B) CVD layer deposited onto Si substrate

    International Nuclear Information System (INIS)

    Roumie, M.; Nsouli, B.

    2001-01-01

    Phosphorus determination, at level of percent, in Si matrix is not an easy analytical task. The analyzed materials arc Borophosphosilicate glass which are an important component of silicon based semiconductor technology. It's a thin SiO2 layer (400 nm) doped with boron and phosphorus using, in general, CVD (Chemical Vapor Deposition) process, in order to improve its plasticity, and deposited onto Si substrate. Therefore, the mechanical behaviour of the CVD SiO2 (P, B) layer is very sensitive to the phosphorus concentration. In this work we explore the capability of FIXE (Particle Induced X-ray Emission) to monitor a rapid and accurate quantification of P which is usually very low in such materials (few percent of the thin CVD layer deposited onto a silicon substrate). A systematic study is undertaken using Proton (0.5-3 MeV energy) and helium (1-3 MeV energy) beams, different thickness of X-ray absorber (131 and 146 μm of Kapton filter) and different tilting angles (0,45,60 and 80 deg.). The optimized measurement conditions should improve the P signal detection comparing to the Si and Background ones

  18. Anomalous heat evolution of deuteron implanted Al on electron bombardment

    International Nuclear Information System (INIS)

    Kamada, K.; Kinoshita, H.; Takahashi, H.

    1994-05-01

    Anomalous heat evolution was observed in deuteron implanted Al foils on 175 keV electron bombardment. Local regions with linear dimension of several 100nm showed simultaneous transformation from single crystalline to polycrystalline structure instantaneously on the electron bombardment, indicating the temperature rise up to more than melting point of Al from room temperature. The amount of energy evolved was more than 180 MeV for each transformed region. The transformation was never observed in proton implanted Al foils. The heat evolution was considered due to a nuclear reaction in D 2 molecular collections. (author)

  19. Assessing the Long Term Impact of Phosphorus Fertilization on Phosphorus Loadings Using AnnAGNPS

    OpenAIRE

    Yuan, Yongping; Bingner, Ronald L.; Locke, Martin A.; Stafford, Jim; Theurer, Fred D.

    2011-01-01

    High phosphorus (P) loss from agricultural fields has been an environmental concern because of potential water quality problems in streams and lakes. To better understand the process of P loss and evaluate the effects of different phosphorus fertilization rates on phosphorus losses, the USDA Annualized AGricultural Non-Point Source (AnnAGNPS) pollutant loading model was applied to the Ohio Upper Auglaize watershed, located in the southern portion of the Maumee River Basin. In this study, the ...

  20. Phosphorus K4 Crystal: A New Stable Allotrope

    OpenAIRE

    Jie Liu; Shunhong Zhang; Yaguang Guo; Qian Wang

    2016-01-01

    The intriguing properties of phosphorene motivate scientists to further explore the structures and properties of phosphorus materials. Here, we report a new allotrope named K 4 phosphorus composed of three-coordinated phosphorus atoms in non-layered structure which is not only dynamically and mechanically stable, but also possesses thermal stability comparable to that of the orthorhombic black phosphorus (A17). Due to its unique configuration, K 4 phosphorus exhibits exceptional properties: i...

  1. Screening crops for efficient phosphorus acquisition in a low phosphorus soil using radiotracer technique

    International Nuclear Information System (INIS)

    Meena, S.; Malarvizhi, P.; Rajeswari, R.

    2017-01-01

    Deficiency of phosphorus (P) is the major limitation to agricultural production. Identification of cultivars with greater capacity to grow in soils having low P availability (phosphorus efficiency) will help in P management in a sustainable way. Green house experiment with maize (CO 6) and cotton (MCU 13) as test crops with four levels of phosphorus (0, 3.75, 7.50 and 15 mg P kg -1 soil) was conducted in a P deficient soil (7.2 kg ha -1 ) to study the phosphorus acquisition characteristics and to select efficient crop using 32 P radiotracer technique. Carrier free 32 P obtained as orthophosphoric acid in dilute hydrochloric acid medium from the Board of Radiation and Isotope Technology, Mumbai was used for labeling the soil @ 3200 kBq pot -1 . After 60 days the crops were harvested and the radioactivity was measured in the plant samples using Liquid scintillation counter (PerkinElmer - Tricarb 2810 TR). Different values of specific radioactivity and Isotopically Exchangeable Phosphorus for maize and cotton indicated that chemically different pools of soil P were utilized and maize accessing a larger pool than cotton. Maize having recorded high Phosphorus Use Efficiency, Phosphorus Efficiency and low Phosphorus Stress Factor values, it is a better choice for P deficient soils. Higher Phosphorus Acquisition Efficiency of maize (59 %) than cotton (48%) can be related to the ability of maize to take up P from insoluble inorganic P forms. (author)

  2. A simple method to produce quasi-simultaneous multiple energy helium implantation

    International Nuclear Information System (INIS)

    Paszti, F.; Fried, M.; Manuaba, A.; Mezey, G.; Kotai, E.; Lohner, T.

    1982-11-01

    If a monoenergetic ion beam is bombarding a target through an absorber foil tilted continuously (i.e. its effective thickness changing continuously), the depth distribution of the implanted ions in the sample depends on the way the absorber is moving. The present paper describes a way of absorber tilting for obtaining a uniform depth distribution and its experimental verification in the case of MeV energy helium ions implanted into aluminium target. (author)

  3. Ballistic self-annealing during ion implantation

    International Nuclear Information System (INIS)

    Prins, Johan F.

    2001-01-01

    Ion implantation conditions are considered during which the energy, dissipated in the collision cascades, is low enough to ensure that the defects, which are generated during these collisions, consist primarily of vacancies and interstitial atoms. It is proposed that ballistic self-annealing is possible when the point defect density becomes high enough, provided that none, or very few, of the interstitial atoms escape from the layer being implanted. Under these conditions, the fraction of ballistic atoms, generated within the collision cascades from substitutional sites, decreases with increasing ion dose. Furthermore, the fraction of ballistic atoms, which finally end up within vacancies, increases with increasing vacancy density. Provided the crystal structure does not collapse, a damage threshold should be approached where just as many atoms are knocked out of substitutional sites as the number of ballistic atoms that fall back into vacancies. Under these conditions, the average point defect density should approach saturation. This model is applied to recently published Raman data that have been measured on a 3 MeV He + -ion implanted diamond (Orwa et al 2000 Phys. Rev. B 62 5461). The conclusion is reached that this ballistic self-annealing model describes the latter data better than a model in which it is assumed that the saturation in radiation damage is caused by amorphization of the implanted layer. (author)

  4. High energy iron ion implantation into sapphire

    International Nuclear Information System (INIS)

    Allen, W.R.; Pedraza, D.F.

    1990-01-01

    Sapphire specimens of c-axis orientation were implanted at room temperature with iron ions at energies of 1.2 and of 2 MeV to various fluences up to 8 x 10 16 cm -2 . The damage induced by the implantations was assessed by Rutherford backscattering spectroscopy in random and channeling geometries. Dechanneling in both sublattices was observed to saturate for all implantation conditions. Disorder in the aluminum sublattice was found to increase with depth at a significantly slower rate than in the oxygen sublattice. In the oxygen sublattice, a relative yield, χ, of 0.80 ± 0.11 was attained at a depth of 0.1 μm and remained constant up to the measured depth of 0.45 μm. In the aluminum sublattice, the disorder increased with depth and the dechanneling asymptotically approached χ =0.70 ± 0.04 at 0.45 μm. These results are discussed and compared with those for shallower Fe implantations obtained by other researchers

  5. Phosphorus in antique iron music wire.

    Science.gov (United States)

    Goodway, M

    1987-05-22

    Harpsichords and other wire-strung musical instruments were made with longer strings about the beginning of the 17th century. This change required stronger music wire. Although these changes coincided with the introduction of the first mass-produced steel (iron alloyed with carbon), carbon was not found in samples of antique iron harpsichord wire. The wire contained an amount of phosphorus sufficient to have impeded its conversion to steel, and may have been drawn from iron rejected for this purpose. The method used to select pig iron for wire drawing ensured the highest possible phosphorus content at a time when its presence in iron was unsuspected. Phosphorus as an alloying element has had the reputation for making steel brittle when worked cold. Nevertheless, in replicating the antique wire, it was found that lowcarbon iron that contained 0.16 percent phosphorus was easily drawn to appropriate gauges and strengths for restringing antique harpsichords.

  6. The phosphorus and the transition metals chemistry

    International Nuclear Information System (INIS)

    Mathey, F.

    1988-01-01

    The 1988 progress report, concerning the Polytechnic School unit (France), which studies the phosphorus and the transition metals chemistry, is presented. The laboratory activities are related to the following topics: the phosporus heterocyclic chemistry, the phosphorus-carbon double bonds chemistry, the new transition metals phosphorus compounds, the phosphonates and their uses. Some practical applications of homogeneous catalysis and new materials synthesis are investigated. The main results obtained are: the discovery of the tetra-phosphafulvalenes, the utilization of a new synthesis method of the phosphorus-carbon double bonds and the stabilization of the α-phosphonyled carbanions by the lithium diisopropylamidourea. The papers, the congress communications and the thesis are also shown [fr

  7. short communication synthesis of stabilized phosphorus ylides

    African Journals Online (AJOL)

    Preferred Customer

    made from phosphine and an alkyl halide [1], and they are also obtained by the Michael ... have established a convenient, one-pot method for preparing stabilized phosphorus ylides ... The ylides are converted to electron-poor alkenes via.

  8. Yellow phosphorus-induced Brugada phenocopy.

    Science.gov (United States)

    Dharanipradab, Mayakrishnan; Viswanathan, Stalin; Kumar, Gokula Raman; Krishnamurthy, Vijayalatchumy; Stanley, Daphene Divya

    Metallic phosphides (of aluminum and phosphide) and yellow phosphorus are commonly used rodenticide compounds in developing countries. Toxicity of yellow phosphorus mostly pertains to the liver, kidney, heart, pancreas and the brain. Cardiotoxicity with associated Brugada ECG pattern has been reported only in poisoning with metallic phosphides. Brugada phenocopy and hepatic dysfunction were observed in a 29-year-old male following yellow phosphorus consumption. He had both type 1 (day1) and type 2 (day2) Brugada patterns in the electrocardiogram, which resolved spontaneously by the third day without hemodynamic compromise. Toxins such as aluminum and zinc phosphide have been reported to induce Brugada ECG patterns due to the generation of phosphine. We report the first case of yellow phosphorus-related Brugada phenocopy, without hemodynamic compromise or malignant arrhythmia. Copyright © 2017 Elsevier Inc. All rights reserved.

  9. Electrical activation of phosphorus in silicon

    International Nuclear Information System (INIS)

    Goh, K.E.J.; Oberbeck, L.; Simmons, M.Y.; Clark, R.G.

    2003-01-01

    Full text: We present studies of phosphorus δ-doping in silicon with a view to determining the degree of electrical activation of the dopants. These results have a direct consequence for the use of phosphorus as a qubit in a silicon-based quantum computer such as that proposed by Kane. Room temperature and 4 K Hall effect measurements are presented for phosphorus δ-doped layers grown in n-type silicon using two different methods. In the first method, the δ-layer was deposited by a phosphorus effusion cell in an MBE chamber. In the second method, the Si surface was dosed with phosphine gas and then annealed to 550 deg C to incorporate P into the substrate. In both methods, the P δ-doped layer was subsequently encapsulated by ∼25 nm of Si grown epitaxially. We discuss the implications of our results on the fabrication of the Kane quantum computer

  10. Nanotubes based on monolayer blue phosphorus

    KAUST Repository

    Montes Muñ oz, Enrique; Schwingenschlö gl, Udo

    2016-01-01

    We demonstrate structural stability of monolayer zigzag and armchair blue phosphorus nanotubes by means of molecular dynamics simulations. The vibrational spectrum and electronic band structure are determined and analyzed as functions of the tube

  11. Characterization of 2 MeV, 4 MeV, 6 MeV and 18 MeV buildup caps for use with a 0.6 cubic centimeter thimble ionization chamber

    International Nuclear Information System (INIS)

    Salyer, R.L.; VanDenburg, J.W.; Prinja, A.K.; Kirby, T.; Busch, R.; Hong-Nian Jow

    1996-07-01

    The purpose of this research is to characterize existing 2 MeV, 4 MeV and 6 MeV buildup caps, and to determine if a buildup cap can be made for the 0.6 cm 3 thimble ionization chamber that will accurately measure exposures in a high-energy photon radiation field. Two different radiation transport codes were used to computationally characterize existing 2 MeV, 4 MeV, and 6 MeV buildup caps for a 0.6 cm 3 active volume thimble ionization chamber: ITS, The Integrated TIGER Series of Coupled Electron-Photon Monte Carlo Transport Codes; and CEPXS/ONEDANT, A One-Dimensional Coupled Electron-Photon Discrete Ordinates Code Package. These codes were also used to determine the design characteristics of a buildup cap for use in the 18 MeV photon beam produced by the 14 TW pulsed power HERMES-III electron accelerator. The maximum range of the secondary electron, the depth at which maximum dose occurs, and the point where dose and collision kerma are equal have been determined to establish the validity of electronic equilibrium. The ionization chamber with the appropriate buildup cap was then subjected to a 4 MeV and a 6 MeV bremmstrahlung radiation spectrum to determine the detector response

  12. 14 MeV neutrons physics and applications

    CERN Document Server

    Valkovic, Vladivoj

    2015-01-01

    Despite the often difficult and time-consuming effort of performing experiments with fast (14 MeV) neutrons, these neutrons can offer special insight into nucleus and other materials because of the absence of charge. 14 MeV Neutrons: Physics and Applications explores fast neutrons in basic science and applications to problems in medicine, the environment, and security.Drawing on his more than 50 years of experience working with 14 MeV neutrons, the author focuses on:Sources of 14 MeV neutrons, including laboratory size accelerators, small and sealed tube generators, well logging sealed tube ac

  13. Review of neutron data: 10 to 40 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Haight, R.C.

    1977-04-01

    Neutron data are reviewed for incident neutron energies between 10 and 40 MeV. A census of the data shows that there are many gaps in this range and that the existing data are primarily for neutron energies around 14 MeV. Aside from total cross sections, there are few data between 10 and 13 MeV and between 15 and 40 MeV. Examples are presented to show the quality of selected data for total, elastic, inelastic, activation, and charged-particle and gamma-ray production cross sections. The spectra of emitted particles are also discussed.

  14. Review of neutron data: 10 to 40 MeV

    International Nuclear Information System (INIS)

    Haight, R.C.

    1977-04-01

    Neutron data are reviewed for incident neutron energies between 10 and 40 MeV. A census of the data shows that there are many gaps in this range and that the existing data are primarily for neutron energies around 14 MeV. Aside from total cross sections, there are few data between 10 and 13 MeV and between 15 and 40 MeV. Examples are presented to show the quality of selected data for total, elastic, inelastic, activation, and charged-particle and gamma-ray production cross sections. The spectra of emitted particles are also discussed

  15. Dynamics of implanted muons at low temperatures in white tin

    International Nuclear Information System (INIS)

    Solt, G.; Zimmermann, U.; Herlach, D.

    2008-01-01

    The low temperature lattice site of the implanted μ + particle and its subsequent delocalization at higher temperatures was investigated in single crystal white tin for 2 + was found to reside at the interstitial sites of type d. With increasing temperature thermally activated hopping sets in at T=48±2K, resulting in complete delocalization near 60 K. The activation energy for hopping, E a =113±15meV, is substantially higher than that found previously for the equally tetragonal indium

  16. Luminescence of natural IIa diamond implanted with nitrogen ions

    International Nuclear Information System (INIS)

    Varichenko, V.S.; Zaitsev, A.M.; Stelmakh, V.F.

    1986-01-01

    Investigations on the influence of defect environment in the irradiated diamond lattice are presented. The N + implantation with energies from 60 keV up to 60 MeV was used both as method of introducing nitrogen containing defects into the diamond and as a good tool to create different environment of these defects. Photoluminescence, cathodoluminescence, and annealing measurements show that the action of defect environment is revealed through the effective pressure affecting the thermal stability of defects and their inhomogeneous distortion

  17. Water Quality Criteria for White Phosphorus

    Science.gov (United States)

    1987-08-01

    the number of eggs produced per adult , Chronic tests using inidges exposed to elemental phosphorus through contaminated sediments were also performed by...hemoglobinemia, hemoglobinuria, hematuria, bilirubinemia, mild (Cases 2 and 3) to severe (Case 1) hypocalcemia , -61- r. ., TABLE 14. SUMMARY OF CASUALTIES...day yellow phosphorus in corn oil for 30 days or less, lost weight. Young adult rats injected with 0.5 mg/kg/day lost less weight than fully mature or

  18. Physicochemical properties of mixed phosphorus halides

    International Nuclear Information System (INIS)

    Sladkov, I.B.; Tugarinova, N.S.

    1996-01-01

    Certain physicochemical properties (thermodynamic characteristics at boiling point, critical constants, density of liquid on the saturation line) of mixed phosphorus halides (PI 3 , PI 2 F, PIF 2 , PI 2 Cl, PICl 2 , PI 1 Br, PIBr 2 , PIClF, PIBrCl, etc.) are determined by means of approximate methods. Reliability of the results obtained is confirmed by comparison of calculated and experimental data for phosphorus compounds of the same type. 7 refs., 3 figs., 4 tabs

  19. Phosphorus and phytase levels for layer hens

    OpenAIRE

    Juliana Cristina Ramos Rezende; Antonio Carlos de Laurentiz; Rosemeire da Silva Filardi; Vitor Barbosa Fascina; Daniella Aparecida Berto; Sérgio Turra Sobrane Filho

    2013-01-01

    The objective of this research was to evaluate the performance and bone quality of laying hens after peak production fed diets containing phosphorus levels and phytase. An experiment was conducted with 384 Hy-line distributed in a completely randomized in a factorial 4 x 3 with 4 levels of available phosphorus and 3 levels of phytase. The experimental period was divided into four periods of 28 days, at the end of each cycle were determined experimental feed intake, egg production, egg weight,...

  20. Phosphorus Processing—Potentials for Higher Efficiency

    OpenAIRE

    Ludwig Hermann; Fabian Kraus; Ralf Hermann

    2018-01-01

    In the aftermath of the adoption of the Sustainable Development Goals (SDGs) and the Paris Agreement (COP21) by virtually all United Nations, producing more with less is imperative. In this context, phosphorus processing, despite its high efficiency compared to other steps in the value chain, needs to be revisited by science and industry. During processing, phosphorus is lost to phosphogypsum, disposed of in stacks globally piling up to 3–4 billion tons and growing by about 200 million ...

  1. Implantation of 111In in NTDSi by heavy ion recoil technique

    International Nuclear Information System (INIS)

    Thakare, S.V.; Tomar, B.S.

    1998-01-01

    Heavy ion recoil implantation technique has been used to implant 111 In in n-type silicon using medium energy heavy ion accelerator Pelletron, at TIFR, Colaba, Mumbai. The nuclear reaction used for this purpose was 109 Ag( 7 Li,p4n) 111 In. The beam energy was optimised to be 50 MeV for maximum concentration of the implanted probe atoms. The gamma-ray spectrum of the implanted sample after 24 hours was found to contain only 171 and 245 keV gamma rays of 111 In. The penetration depth of ion is increased to 1.6 μm by heavy ion recoil implantation technique as compared to 0.16 μm with the conventional ion implantation technique. (author)

  2. PIXE microbeam analysis of the metallic debris release around endosseous implants

    International Nuclear Information System (INIS)

    Buso, G.P.; Galassini, S.; Moschini, G.; Passi, P.; Zadro, A.; Uzunov, N.M.; Doyle, B.L.; Rossi, P.; Provencio, P.

    2005-01-01

    The mechanical friction that occurs during the surgical insertion of endosseous implants, both in dentistry and orthopaedics, may cause the detachment of metal debris which are dislodged into the peri-implant tissues and can lead to adverse clinical effects. This phenomenon more likely happens with coated or roughened implants that are the most widely employed. In the present study were studied dental implants screws made of commercially pure titanium and coated using titanium plasma-spray (TPS) technique. The implants were inserted in the tibia of rabbits, and removed 'en bloc' with the surrounding bone after one month. After proper processing and mounting on plastic holders, samples from bones were analysed by EDXRF setup at of National Laboratories of Legnaro, INFN, Italy, and consequently at 3 MeV proton microbeam setup at Sandia National Laboratories. Elemental maps were drawn, showing some occasional presence of metal particles in the peri-implant bone

  3. Effect of He implantation on fracture behavior and microstructural evolution in F82H

    Energy Technology Data Exchange (ETDEWEB)

    Yabuuchi, Kiyohiro, E-mail: kiyohiro.yabuuchi@qse.tohoku.ac.jp [Department of Quantum Science and Energy Engineering, Tohoku University, 6-6-01-2, Aramaki-Aza-Aoba, Aobaku, Sendai, Miyagi 980-8579 (Japan); Sato, Kiminori; Nogami, Shuhei; Hasegawa, Akira [Department of Quantum Science and Energy Engineering, Tohoku University, 6-6-01-2, Aramaki-Aza-Aoba, Aobaku, Sendai, Miyagi 980-8579 (Japan); Ando, Masami; Tanigawa, Hiroyasu [Japan Atomic Energy Agency, 2-166, Oaza-Obuchi-Aza-Omotedate, Rokkasho-mura, Kamikita-gun, Aomori 039-3212 (Japan)

    2014-12-15

    Reduced-activation ferritic/martensitic steels (RAFMs) are the primary candidate structural materials for fusion reactor blanket components. He bubbles, which formed under 14 MeV neutron irradiation, is considered to cause some mechanical property changes. In a previous study, Hasegawa et al. investigated the fracture behavior using Charpy impact test of He implanted F82H by 50 MeV α-particles with cyclotron accelerator, and the ductile brittle transition temperature (DBTT) was increased and intergranular fracture (IGF) was observed. However, the cause of the IGF was not shown in the previous study. To clarify the cause of the IGF of the He implanted F82H by 50 MeV α-particles with cyclotron accelerator, the microstructure of the He implanted F82H was investigated. After Charpy impact test at 233 K, the brittle fracture surface of the He implanted specimen was observed by SEM and TEM. By SEM observation, grain boundary surface was clearly observed from the bottom of the notch to a depth of about 400 μm. This area correspond to the He implanted region. On the other hand, at unimplanted region, river pattern was observed and transgranular fracture occurred. TEM observation revealed the He bubbles agglomeration at dislocations, lath boundaries, and grain boundaries, and the coarsening of precipitates on grain boundaries. IGF of the He implanted F82H was caused by both He bubbles and coarsening precipitates.

  4. Recovery of phosphorus from sewerage treatment sludge

    Energy Technology Data Exchange (ETDEWEB)

    Manuilova, Anastasia

    1999-07-01

    This thesis is a review of the current state of technologies for the removal of phosphorus from wastewater and sludge, and the recovery and re-use of phosphorus. It explains the need for phosphorus removal and describes the current removal processes. Focus is given to phosphorus crystallisation processes and to the processes which treat sewage treatment sludges into potential sources of phosphorus. An interesting possibility to recover phosphorus from sewage sludge by use of Psenner fractionation is also discussed. By this method, the following phosphate fractions of technological significance may be distinguished: (1) redox sensitive phosphates, mainly bound to Fe(OH){sub 3}; (2) phosphate adsorbed to surfaces (Al{sub 2}O{sub 3}), exchangeable against OH{sup -}, and alkali-soluble phosphate; (3) phosphate bound to CaCO{sub 3}, MgCO{sub 3} and in apatite; and (4) organically bound phosphate. The basic removal mechanisms, process schemes and treatment results are described. Two experiments with three different types of sludges from Henriksdal wastewater treatment plant in Stockholm were performed in the laboratory. It was shown that the addition of sodium hydroxide or hydrochloric acid cause the significant release of phosphate (about 80%) for all types of sludges. If a whole Psenner fractionation was performed the phosphate release is approximately 100%.

  5. Effects of white phosphorus on mallard reproduction

    Science.gov (United States)

    Vann, S.I.; Sparling, D.W.; Ottinger, M.A.

    2000-01-01

    Extensive waterfowl mortality involving thousands of ducks, geese, and swans has occurred annually at Eagle River Flats, Alaska since at least 1982. The primary agent for this mortality has been identified as white phosphorus. Although acute and subacute lethality have been described, sublethal effects are less well known. This study reports on the effects of white phosphorus on reproductive function in the mallard (Anas platyrhynchos) in captivity. Fertility, hatching success, teratogenicity, and egg laying frequency were examined in 70 adult female mallards who received up to 7 daily doses of 0, 0.5, 1.0, and 2.0 mg/kg of white phosphorus. Measurements of fertility and hatchability were reduced by the white phosphorus. Teratogenic effects were observed in embryos from hens dosed at all treatment levels. Egg laying frequency was reduced even at the lowest treatment level; treated hens required a greater number of days to lay a clutch of 12 eggs than control hens. After two doses at 2.0 mg/kg, all females stopped laying completely for a minimum of 10 days and laying frequency was depressed for at least 45 days. Fertility of 10 adult male mallards dosed with 1.0 mg/kg of white phosphorus did not differ from 10 controls, but plasma testosterone levels were significantly (p free-ranging mallards may be impaired if they are exposed to white phosphorus at typical field levels.

  6. Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays

    KAUST Repository

    Lin, S. S.

    2009-11-11

    We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of ∼140 meV Is identified by temperaturedependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application In high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices. © 2009 American Chemical Society.

  7. Coherent pion production induced by 300 MeV and 600 MeV deuterons

    International Nuclear Information System (INIS)

    Aslanides, E.; Bergdolt, A.M.; Bing, O.; Fassnacht, P.; Hibou, F.

    1982-01-01

    Experimental data on (d,π - ) reactions at 300 and 600 MeV incident energy are presented. Inclusive spectra on 6 Li, 9 Be and 10 B targets near the kinematical limit do not show the usual scaling behaviour. For the two-body reaction 6 Li (d,π - ) 8 B the lowest-energy discrete states of the final nucleus were clearly resolved and the cross sections for pion production leading to those states have been determined. (orig.)

  8. The renaissance of black phosphorus.

    Science.gov (United States)

    Ling, Xi; Wang, Han; Huang, Shengxi; Xia, Fengnian; Dresselhaus, Mildred S

    2015-04-14

    One hundred years after its first successful synthesis in the bulk form in 1914, black phosphorus (black P) was recently rediscovered from the perspective of a 2D layered material, attracting tremendous interest from condensed matter physicists, chemists, semiconductor device engineers, and material scientists. Similar to graphite and transition metal dichalcogenides (TMDs), black P has a layered structure but with a unique puckered single-layer geometry. Because the direct electronic band gap of thin film black P can be varied from 0.3 eV to around 2 eV, depending on its film thickness, and because of its high carrier mobility and anisotropic in-plane properties, black P is promising for novel applications in nanoelectronics and nanophotonics different from graphene and TMDs. Black P as a nanomaterial has already attracted much attention from researchers within the past year. Here, we offer our opinions on this emerging material with the goal of motivating and inspiring fellow researchers in the 2D materials community and the broad readership of PNAS to discuss and contribute to this exciting new field. We also give our perspectives on future 2D and thin film black P research directions, aiming to assist researchers coming from a variety of disciplines who are desirous of working in this exciting research field.

  9. Total Value of Phosphorus Recovery.

    Science.gov (United States)

    Mayer, Brooke K; Baker, Lawrence A; Boyer, Treavor H; Drechsel, Pay; Gifford, Mac; Hanjra, Munir A; Parameswaran, Prathap; Stoltzfus, Jared; Westerhoff, Paul; Rittmann, Bruce E

    2016-07-05

    Phosphorus (P) is a critical, geographically concentrated, nonrenewable resource necessary to support global food production. In excess (e.g., due to runoff or wastewater discharges), P is also a primary cause of eutrophication. To reconcile the simultaneous shortage and overabundance of P, lost P flows must be recovered and reused, alongside improvements in P-use efficiency. While this motivation is increasingly being recognized, little P recovery is practiced today, as recovered P generally cannot compete with the relatively low cost of mined P. Therefore, P is often captured to prevent its release into the environment without beneficial recovery and reuse. However, additional incentives for P recovery emerge when accounting for the total value of P recovery. This article provides a comprehensive overview of the range of benefits of recovering P from waste streams, i.e., the total value of recovering P. This approach accounts for P products, as well as other assets that are associated with P and can be recovered in parallel, such as energy, nitrogen, metals and minerals, and water. Additionally, P recovery provides valuable services to society and the environment by protecting and improving environmental quality, enhancing efficiency of waste treatment facilities, and improving food security and social equity. The needs to make P recovery a reality are also discussed, including business models, bottlenecks, and policy and education strategies.

  10. THE CHEMICAL EVOLUTION OF PHOSPHORUS

    International Nuclear Information System (INIS)

    Jacobson, Heather R.; Thanathibodee, Thanawuth; Frebel, Anna; Roederer, Ian U.; Cescutti, Gabriele; Matteucci, Francesca

    2014-01-01

    Phosphorus is one of the few remaining light elements for which little is known about its nucleosynthetic origin and chemical evolution, given the lack of optical absorption lines in the spectra of long-lived FGK-type stars. We have identified a P I doublet in the near-ultraviolet (2135/2136 Å) that is measurable in stars of low metallicity. Using archival Hubble Space Telescope-Space Telescope Imaging Spectrograph spectra, we have measured P abundances in 13 stars spanning –3.3 ≤ [Fe/H] ≤ -0.2, and obtained an upper limit for a star with [Fe/H] ∼ -3.8. Combined with the only other sample of P abundances in solar-type stars in the literature, which spans a range of –1 ≤ [Fe/H] ≤ +0.2, we compare the stellar data to chemical evolution models. Our results support previous indications that massive-star P yields may need to be increased by a factor of a few to match stellar data at all metallicities. Our results also show that hypernovae were important contributors to the P production in the early universe. As P is one of the key building blocks of life, we also discuss the chemical evolution of the important elements to life, C-N-O-P-S, together

  11. The Chemical Evolution of Phosphorus

    Science.gov (United States)

    Jacobson, Heather R.; Thanathibodee, Thanawuth; Frebel, Anna; Roederer, Ian U.; Cescutti, Gabriele; Matteucci, Francesca

    2014-12-01

    Phosphorus is one of the few remaining light elements for which little is known about its nucleosynthetic origin and chemical evolution, given the lack of optical absorption lines in the spectra of long-lived FGK-type stars. We have identified a P I doublet in the near-ultraviolet (2135/2136 Å) that is measurable in stars of low metallicity. Using archival Hubble Space Telescope-Space Telescope Imaging Spectrograph spectra, we have measured P abundances in 13 stars spanning -3.3 production in the early universe. As P is one of the key building blocks of life, we also discuss the chemical evolution of the important elements to life, C-N-O-P-S, together. Based on observations made with the NASA/ESA Hubble Space Telescope, obtained at the Space Telescope Science Institute, which is operated by the Association of Universities for Research in Astronomy, Inc., under NASA contract NAS 5-26555. This work is supported through program AR-13246. Other portions of this work are based on data gathered with the 6.5 m Magellan Telescopes located at Las Campanas Observatory, Chile, and the McDonald Observatory of the University of Texas at Austin.

  12. Implantable Medical Devices

    Science.gov (United States)

    ... Artery Disease Venous Thromboembolism Aortic Aneurysm More Implantable Medical Devices Updated:Sep 16,2016 For Rhythm Control ... a Heart Attack Introduction Medications Surgical Procedures Implantable Medical Devices • Life After a Heart Attack • Heart Attack ...

  13. Intercavitary implants dosage calculation

    International Nuclear Information System (INIS)

    Rehder, B.P.

    The use of spacial geometry peculiar to each treatment for the attainment of intercavitary and intersticial implants dosage calculation is presented. The study is made in patients with intercavitary implants by applying a modified Manchester technique [pt

  14. Physical and chemical characterization of surfaces of nitrogen implanted steels

    International Nuclear Information System (INIS)

    Moncoffre, N.

    1986-01-01

    The studied steels are of industrial type (42CD4, 100C6, Z200C13). Very often, the low carbon steel XCO6 has been used as a reference material. The aim of the research is to understand and to explain the mechanisms of wear resistance to improvement. A good characterization of the implanted layer is thus necessary. It implies to establish the distribution profiles of the implanted ions to identify the chemical and structural state of the phases created during implantation as a function of various implantation parameters (dose, temperature). Temperature is the particularly parameter. Its influence is put in evidence both during implantation and during annealings under vacuum. Nitrogen distribution profiles are performed thanks to the non destructive 15 N(p,αγ) 12 C nuclear reaction. The chemical state of the Fe-N phases formed by implantation is determined using first Electron Conversion Moessbauer Spectroscopy and secondly, as a complement, using grazing angle X ray diffraction. The detected compounds are ε-nitrides, ε-carbonitrides, (N) - martensite and α-Fe 16 N 2 whose evolution is carefully followed versus temperature. The diffraction technique reveals a texture of the implanted layer. This preferentiel orientation is found to be temperature dependent but dose independent. The carbon presence at the surface is studied as a function of implantation conditions (vacuum, temperature, dose). Carbon profiling is obtained using α backscattering ( 12 C(α,α') reaction at 5,7 MeV). Thus is achieved a complete characterization of the implanted zone whose evolution as a function of implantation parameters (especially temperature) is correlated with tribological results [fr

  15. Estimate of dietary phosphorus intake using 24-h urine collection

    Science.gov (United States)

    Morimoto, Yuuka; Sakuma, Masae; Ohta, Hiroyuki; Suzuki, Akitsu; Matsushita, Asami; Umeda, Minako; Ishikawa, Makoto; Taketani, Yutaka; Takeda, Eiji; Arai, Hidekazu

    2014-01-01

    Increases in serum phosphorus levels and dietary phosphorus intake induces vascular calcification, arterial sclerosis and cardiovascular diseases. Limiting phosphorus intake is advisable, however, no assessment methods are capable of estimating dietary phosphorus intake. We hypothesized that urinary phosphorus excretion can be translated into estimation of dietary phosphorus intake, and we evaluated whether a 24-h urine collection method could estimate dietary phosphorus intake. Thirty two healthy subjects were recruited for this study. Subjects collected urine samples over 24 h and weighed dietary records. We calculated dietary protein intake and phosphorus intake from dietary records and urine collection, and investigated associations between the two methods in estimating protein and phosphorus intake. Significant positive correlations were observed between dietary records and UC for protein and phosphorus intake. The average intakes determined from dietary records were significantly higher than from urine collection for both protein and phosphorus. There was a significant positive correlation between both the phosphorus and protein difference in dietary records and urine collection. The phosphorus-protein ratio in urine collection was significantly higher than in dietary records. Our data indicated that the 24-h urine collection method can estimate the amount of dietary phosphorus intake, and the results were superior to estimation by weighed dietary record. PMID:25120281

  16. Implantable electronic medical devices

    CERN Document Server

    Fitzpatrick, Dennis

    2014-01-01

    Implantable Electronic Medical Devices provides a thorough review of the application of implantable devices, illustrating the techniques currently being used together with overviews of the latest commercially available medical devices. This book provides an overview of the design of medical devices and is a reference on existing medical devices. The book groups devices with similar functionality into distinct chapters, looking at the latest design ideas and techniques in each area, including retinal implants, glucose biosensors, cochlear implants, pacemakers, electrical stimulation t

  17. Simulating soil phosphorus dynamics for a phosphorus loss quantification tool.

    Science.gov (United States)

    Vadas, Peter A; Joern, Brad C; Moore, Philip A

    2012-01-01

    Pollution of fresh waters by agricultural phosphorus (P) is a water quality concern. Because soils can contribute significantly to P loss in runoff, it is important to assess how management affects soil P status over time, which is often done with models. Our objective was to describe and validate soil P dynamics in the Annual P Loss Estimator (APLE) model. APLE is a user-friendly spreadsheet model that simulates P loss in runoff and soil P dynamics over 10 yr for a given set of runoff, erosion, and management conditions. For soil P dynamics, APLE simulates two layers in the topsoil, each with three inorganic P pools and one organic P pool. It simulates P additions to soil from manure and fertilizer, distribution among pools, mixing between layers due to tillage and bioturbation, leaching between and out of layers, crop P removal, and loss by surface runoff and erosion. We used soil P data from 25 published studies to validate APLE's soil P processes. Our results show that APLE reliably simulated soil P dynamics for a wide range of soil properties, soil depths, P application sources and rates, durations, soil P contents, and management practices. We validated APLE specifically for situations where soil P was increasing from excessive P inputs, where soil P was decreasing due to greater outputs than inputs, and where soil P stratification occurred in no-till and pasture soils. Successful simulations demonstrate APLE's potential to be applied to major management scenarios related to soil P loss in runoff and erosion. Copyright © by the American Society of Agronomy, Crop Science Society of America, and Soil Science Society of America, Inc.

  18. Sustainable Phosphorus Chemistry: A Silylphosphide Synthon for the Generation of Value-Added Phosphorus Chemicals.

    Science.gov (United States)

    Slootweg, J Chris

    2018-05-07

    Avoiding white phosphorus: Cummins and Geeson have recently described the conversion of phosphoric acid into the novel bis(trichlorosilyl)phosphide anion, which serves as a key intermediate in the synthesis of organophosphines, hexafluorophosphate, and phosphine gas in a reaction sequence that does not rely on white phosphorus. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Phosphorus use efficiency of maize: an investigation using radiotracer phosphorus (32P)

    International Nuclear Information System (INIS)

    Meena, S.

    2017-01-01

    A better understanding on the nutrient uptake and utilization by plants is essential for developing better nutrient efficient cultivars suited for optimal production. Precise information on the PUE of crops and P dynamics can be obtained with the help of radiotracer technique. To study the phosphorus acquisition and phosphorus use efficiency of added sources in maize using 32 P, a pot culture experiment was conducted in a medium P soil (21.26 kg ha -1 ). The treatments were P as Single Superphosphate, Enriched FYM with Single Superphosphate (EFYM), DAP, Nutriseed pack (SSP), Nutriseed pack (DAP). The above treatments were applied along with phosphobacteria. Totally there were ten treatments replicated four times. Phosphorus sources were tagged with 32 P (obtained as 32 P in orthophosphoric medium from the Board of Radiation and Isotope Technology) and applied as per the treatments. Radioactive 32 P in the grain and stover sample was determined using Liquid Scintillation Counter (Perkin Elmer Tricarb 2810 R). Using the data, per cent phosphorus derived from fertilizer (%Pdff), per cent phosphorus derived from soil (%Pdfs), Phosphorus Use Efficiency (PUE) and A value were determined. Application of Phosphorus (SSP, DAP, enriched FYM with SSP, Nutriseed pack (SSP) and Nutriseed pack (DAP)) along with PB increased the per cent phosphorus derived from fertilizer (% Pdff), P uptake from fertilizer and PUE. The highest PUE of 25.38 was recorded in the treatment where enriched FYM with SSP was applied along with PB. (author)

  20. NSRL 200 MeV linac beam energy stabilization system

    International Nuclear Information System (INIS)

    Huang Guirong; Pei Yuanji; Dong Sai

    2001-01-01

    By using the computer image processing technology and RF phase auto-shifting system, the ESS (Energy Stabilization System) was applied to 200 MeV Linac. the ESS adjusts beam energy automatically in a range of +-4 MeV. After adjustment beam energy stability is improved to +-6%

  1. Estimation of phosphorus flux in rivers during flooding.

    Science.gov (United States)

    Chen, Yen-Chang; Liu, Jih-Hung; Kuo, Jan-Tai; Lin, Cheng-Fang

    2013-07-01

    Reservoirs in Taiwan are inundated with nutrients that result in algal growth, and thus also reservoir eutrophication. Controlling the phosphorus load has always been the most crucial issue for maintaining reservoir water quality. Numerous agricultural activities, especially the production of tea in riparian areas, are conducted in watersheds in Taiwan. Nutrients from such activities, including phosphorus, are typically flushed into rivers during flooding, when over 90% of the yearly total amount of phosphorous enters reservoirs. Excessive or enhanced soil erosion from rainstorms can dramatically increase the river sediment load and the amount of particulate phosphorus flushed into rivers. When flow rates are high, particulate phosphorus is the dominant form of phosphorus, but sediment and discharge measurements are difficult during flooding, which makes estimating phosphorus flux in rivers difficult. This study determines total amounts of phosphorus transport by measuring flood discharge and phosphorous levels during flooding. Changes in particulate phosphorus, dissolved phosphorus, and their adsorption behavior during a 24-h period are analyzed owing to the fact that the time for particulate phosphorus adsorption and desorption approaching equilibrium is about 16 h. Erosion of the reservoir watershed was caused by adsorption and desorption of suspended solids in the river, a process which can be summarily described using the Lagmuir isotherm. A method for estimating the phosphorus flux in the Daiyujay Creek during Typhoon Bilis in 2006 is presented in this study. Both sediment and phosphorus are affected by the drastic discharge during flooding. Water quality data were collected during two flood events, flood in June 9, 2006 and Typhoon Bilis, to show the concentrations of suspended solids and total phosphorus during floods are much higher than normal stages. Therefore, the drastic changes of total phosphorus, particulate phosphorus, and dissolved phosphorus in

  2. Peak Phosphorus: Clarifying the Key Issues of a Vigorous Debate about Long-Term Phosphorus Security

    Directory of Open Access Journals (Sweden)

    Stuart White

    2011-10-01

    Full Text Available This paper reviews the latest information and perspectives on global phosphorus scarcity. Phosphorus is essential for food production and modern agriculture currently sources phosphorus fertilizers from finite phosphate rock. The 2008 food and phosphate fertilizer price spikes triggered increased concerns regarding the depletion timeline of phosphate rock reserves. While estimates range from 30 to 300 years and are shrouded by lack of publicly available data and substantial uncertainty, there is a general consensus that the quality and accessibility of remaining reserves are decreasing and costs will increase. This paper clarifies common sources of misunderstandings about phosphorus scarcity and identifies areas of consensus. It then asks, despite some persistent uncertainty, what would it take to achieve global phosphorus security? What would a ‘hard-landing’ response look like and how could preferred ‘soft-landing’ responses be achieved?

  3. Amorphization and the effect of implanted ions in SiC

    International Nuclear Information System (INIS)

    Snead, L.L.; Zinkle, S.J.

    1994-01-01

    The effects of implanted ion chemistry and displacement damage on the amorphization threshold dose of SiC were studied using cross-section transmission electron microscopy. Room temperature as well as 200 and 400 C irradiations were carried out with 3.6 MeV Fe, 1.8 MeV Cl, 1 MeV He or 0.56 MeV Si ions. The room temperature amorphization threshold dose in irradiated regions well separated from the implanted ions was found to range from 0.3 to 0.5 dpa for the four different ion species. The threshold dose for amorphization in the He, Si and Fe ion-implanted regions was also ∼0.3 to 0.5 dpa. On the other hand, the amorphization threshold in the Cl-implanted region was only about 0.1 dpa. The volume change associated with amorphization was ∼17%. No evidence for amorphization was obtained in specimens irradiated at 200 or 400 C. An understanding of the microstructural evolution of SiC under irradiation is critical to the application of these materials in fusion energy systems

  4. Phosphorus absorption in drip irrigation

    International Nuclear Information System (INIS)

    Guennelon, R.; Habib, R.

    1979-01-01

    Introducing the use of solute phosphate with drip irrigation may be an unsatisfying practice on account of the very weak mobility of PO 4 anion. Nevertheless P can move down to 30-40 cm depth by following the saturated flux along earth-worms holes or crakes, or by displacement in very narrow structural porosity, even in heavy soils. In this case roots cannot easily absorb PO 4 from soil solution, as soon as the soil is quite saturated. On the other hand, it seems that P absorption occurs very quickly and easily when the implantation of 32 P tagged solution is carried out at the border of zone which is concerned by the irrigation effects [fr

  5. Fission neutron irradiation of copper containing implanted and transmutation produced helium

    DEFF Research Database (Denmark)

    Singh, B.N.; Horsewell, A.; Eldrup, Morten Mostgaard

    1992-01-01

    High purity copper containing approximately 100 appm helium was produced in two ways. In the first, helium was implanted by cyclotron at Harwell at 323 K. In the second method, helium was produced as a transmutation product in 800 MeV proton irradiation at Los Alamos, also at 323 K. The distribut......High purity copper containing approximately 100 appm helium was produced in two ways. In the first, helium was implanted by cyclotron at Harwell at 323 K. In the second method, helium was produced as a transmutation product in 800 MeV proton irradiation at Los Alamos, also at 323 K...... as well as the effect of the presence of other transmutation produced impurity atoms in the 800 MeV proton irradiated copper will be discussed....

  6. Investigation of MeV-Cu implantation and channeling effects into porous silicon formation

    International Nuclear Information System (INIS)

    Ahmad, M.; Naddaf, M.

    2011-01-01

    P-type (1 1 1) silicon wafers were implanted by copper ions (2.5 MeV) in channeling and random directions using ion beam accelerator of the Atomic Energy Commission of Syria (AECS). The effect of implantation direction on formation process of porous silicon (PS) using electrochemical etching method has been investigated using scanning electron microscope (SEM) and photoluminescence (PL) techniques. SEM observations revealed that the size, shape and density of the formed pores are highly affected by the direction of beam implantation. This in turn is seen to influence the PL behavior of the PS.

  7. Investigation of MeV-Cu implantation and channeling effects into porous silicon formation

    International Nuclear Information System (INIS)

    Ahmad, M.; Naddaf, M.

    2012-01-01

    P-type (1 1 1) silicon wafers were implanted by copper ions (2.5 MeV) in channeling and random directions using ion beam accelerator of the Atomic Energy Commission of Syria (AECS). The effect of implantation direction on formation process of porous silicon (PS) using electrochemical etching method has been investigated using scanning electron microscope (SEM) and photoluminescence (PL) techniques. SEM observations revealed that the size, shape and density of the formed pores are highly affected by the direction of beam implantation. This in turn is seen to influence the PL behavior of the PS.(author)

  8. Investigation of MeV-Cu implantation and channeling effects into porous silicon formation

    Science.gov (United States)

    Ahmad, M.; Naddaf, M.

    2011-11-01

    P-type (1 1 1) silicon wafers were implanted by copper ions (2.5 MeV) in channeling and random directions using ion beam accelerator of the Atomic Energy Commission of Syria (AECS). The effect of implantation direction on formation process of porous silicon (PS) using electrochemical etching method has been investigated using scanning electron microscope (SEM) and photoluminescence (PL) techniques. SEM observations revealed that the size, shape and density of the formed pores are highly affected by the direction of beam implantation. This in turn is seen to influence the PL behavior of the PS.

  9. Raman microprobe measurements of stress in ion implanted materials

    Energy Technology Data Exchange (ETDEWEB)

    Nugent, K W; Prawer, S; Weiser, P S; Dooley, S P [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1994-12-31

    Raman microprobe measurements of ion implanted diamond and silicon have shown significant shifts in the Raman line due to stresses in the materials. The Raman line shifts to higher energy if the stress is compressive and to lower energy for tensile stress{sup 1}. The silicon sample was implanted in a 60 {mu}m square with 2.56 x 10{sup 17} ions per square centimeter of 2 MeV Helium. This led to the formation of raised squares with the top 370mm above the original surface. In Raman studies of silicon using visible light, the depth of penetration of the laser beam into the sample is much less than one micron. It was found that the Raman line is due to the silicon overlying the damage region. The diamond sample was implanted with 2 x 10{sup 15} ions per square centimeter of 2.8 MeV carbon. It was concluded that the Raman spectrum could provide information concerning both the magnitude and the direction of stress in an ion implanted sample. It was possible in some cases to determine whether the stress direction is parallel or perpendicular to the sample surface. 1 refs., 2 figs.

  10. Raman microprobe measurements of stress in ion implanted materials

    Energy Technology Data Exchange (ETDEWEB)

    Nugent, K.W.; Prawer, S.; Weiser, P.S.; Dooley, S.P. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1993-12-31

    Raman microprobe measurements of ion implanted diamond and silicon have shown significant shifts in the Raman line due to stresses in the materials. The Raman line shifts to higher energy if the stress is compressive and to lower energy for tensile stress{sup 1}. The silicon sample was implanted in a 60 {mu}m square with 2.56 x 10{sup 17} ions per square centimeter of 2 MeV Helium. This led to the formation of raised squares with the top 370mm above the original surface. In Raman studies of silicon using visible light, the depth of penetration of the laser beam into the sample is much less than one micron. It was found that the Raman line is due to the silicon overlying the damage region. The diamond sample was implanted with 2 x 10{sup 15} ions per square centimeter of 2.8 MeV carbon. It was concluded that the Raman spectrum could provide information concerning both the magnitude and the direction of stress in an ion implanted sample. It was possible in some cases to determine whether the stress direction is parallel or perpendicular to the sample surface. 1 refs., 2 figs.

  11. Exfoliation on stainless steel and inconel produced by 0.8-4 MeV helium ion bombardment

    International Nuclear Information System (INIS)

    Paszti, F.; Mezey, G.; Pogany, L.; Fried, M.; Manuaba, A.; Kotai, E.; Lohner, T.; Pocs, L.

    1982-11-01

    Trying to outline the energy dependence of surface deformations such as exfoliation and flaking on candidate CTR first-wall materials, stainless steel and two types of inconels were bombarded by 0.8, 1 and 4 MeV helium ions. All the bombarded spots could be characterized by by large exfoliations covering almost the total implanted area. No spontaneous rupture was observed except on one type of inconel where flaking took place right after reaching the critical dose. After mechanical opening of the formations, similar inner morphology was found as in our previous studies on gold. (author)

  12. Radiation chemical research around a 15 MeV high average power linac

    International Nuclear Information System (INIS)

    Lahorte, P.; Mondelaers, W.; Masschaele, B.; Cauwels, P.

    1998-01-01

    Complete text of publication follows. The Laboratory of Subatomic and Radiation Physics of the University of Gent is equipped with a 15 MeV 20 kW linear electron accelerator (linac) facility. This accelerator was initially designed for fundamental nuclear physics research but was modified to generate beams for new experimental interdisciplinary projects. In its present configuration the accelerator is used as a multipurpose apparatus for research in the fields of polymer chemistry (crosslinking), biomaterials (hydrogels, drug delivery systems, implants), medicine (extracorporeal bone irradiation, human grafts), biomedical materials, food technology (package materials, food preservation), dosimetry (EPR of alanine systems, geldosimetry), solid-state physics, agriculture and nuclear and radiation physics. In this paper an overview will be presented of both the various research projects around our linac facility involving radiation chemistry and the specialised technologies facilitating this research

  13. Measurement and modelling of the radiation damage of silicon by MeV Ag ions

    International Nuclear Information System (INIS)

    Lindner, J.K.N.; Eder, J.; Stritzker, B.

    1999-01-01

    Depth profiles of the radiation damage produced by 4 MeV Ag ions in Si(111) at temperatures of 210--450 K are studied by optical reflectivity depth profiling and TEM for doses between 10 12 and 10 15 Ag/cm 2 . For high implantation temperatures, the depth of maximum damage is shown to be dose dependent. Point defect diffusion is shown to result in long tails of defect depth profiles. High-temperature amorphization is observed to proceed via the formation and bridge-like coalescence of isolated amorphous volumina. The damage at the depth of the maximum in the nuclear stopping power is described as a function of dose and temperature by the Hecking model. The model parameters and a comparison with those obtained for lighter ions reflect the particular properties of heavy ion collision cascades

  14. Bond formation in hafnium atom implantation into SiC induced by high-energy electron irradiation

    International Nuclear Information System (INIS)

    Yasuda, H.; Mori, H.; Sakata, T.; Naka, M.; Fujita, H.

    1992-01-01

    Bilayer films of Hf (target atoms)/α-SiC (substrate) were irradiated with 2 MeV electrons in an ultra-high voltage electron microscope (UHVEM), with the electron beam incident on the hafnium layer. As a result of the irradiation, hafnium atoms were implanted into the SiC substrate. Changes in the microstructure and valence electronic states associated with the implantation were studied by a combination of UHVEM and Auger valence electron spectroscopy. The implantation process is summarized as follows. (1) Irradiation with 2 MeV electrons first induces a crystalline-to-amorphous transition in α-SiC. (2) Hafnium atoms which have been knocked-off from the hafnium layer by collision with the 2 MeV electrons are implanted into the resultant amorphous SiC. (3) The implanted hafnium atoms make preferential bonding to carbon atoms. (4) With continued irradiation, the hafnium atoms repeat the displacement along the beam direction and the subsequent bonding with the dangling hybrids of carbon and silicon. The repetition of the displacement and subsequent bonding lead to the deep implantation of hafnium atoms into the SiC substrate. It is concluded that implantation successfully occurs when the bond strength between a constituent atom of a substrate and an injected atom is stronger than that between constituent atoms of a substrate. (Author)

  15. The Adequacy of Phosphorus Binder Prescriptions Among American Hemodialysis Patients

    Science.gov (United States)

    Huml, Anne M.; Sullivan, Catherine M.; Leon, Janeen B.; Sehgal, Ashwini R.

    2013-01-01

    Because hemodialysis treatment has a limited ability to remove phosphorus, dialysis patients must restrict dietary phosphorus intake and use phosphorus binding medication. Among patients with restricted dietary phosphorus intake (1000 mg/d), phosphorus binders must bind about 250 mg of excess phosphorus per day and among patients with more typical phosphorus intake (1500 mg/d), binders must bind about 750 mg per day. To determine the phosphorus binding capacity of binder prescriptions among American hemodialysis patients, we undertook a cross-sectional study of a random sample of in-center chronic hemodialysis patients. We obtained data for one randomly selected patient from 244 facilities nationwide. About one-third of patients had hyperphosphatemia (serum phosphorus level > 5.5 mg/dL). Among the 224 patients prescribed binders, the mean phosphorus binding capacity was 256 mg/d (SD 143). 59% of prescriptions had insufficient binding capacity for restricted dietary phosphorus intake, and 100% had insufficient binding capacity for typical dietary phosphorus intake. Patients using two binders had a higher binding capacity than patients using one binder (451 vs. 236 mg/d, p phosphorus balance. Use of two binders results in higher binder capacity. Further work is needed to understand the impact of binder prescriptions on mineral balance and metabolism and to determine the value of substantially increasing binder prescriptions. PMID:23013171

  16. Trends in cochlear implants.

    Science.gov (United States)

    Zeng, Fan-Gang

    2004-01-01

    More than 60,000 people worldwide use cochlear implants as a means to restore functional hearing. Although individual performance variability is still high, an average implant user can talk on the phone in a quiet environment. Cochlear-implant research has also matured as a field, as evidenced by the exponential growth in both the patient population and scientific publication. The present report examines current issues related to audiologic, clinical, engineering, anatomic, and physiologic aspects of cochlear implants, focusing on their psychophysical, speech, music, and cognitive performance. This report also forecasts clinical and research trends related to presurgical evaluation, fitting protocols, signal processing, and postsurgical rehabilitation in cochlear implants. Finally, a future landscape in amplification is presented that requires a unique, yet complementary, contribution from hearing aids, middle ear implants, and cochlear implants to achieve a total solution to the entire spectrum of hearing loss treatment and management.

  17. Benefits and Risks of Cochlear Implants

    Science.gov (United States)

    ... and Medical Procedures Implants and Prosthetics Cochlear Implants Benefits and Risks of Cochlear Implants Share Tweet Linkedin ... the Use of Cochlear Implants What are the Benefits of Cochlear Implants? For people with implants: Hearing ...

  18. DC and RF ion accelerators for MeV energies

    International Nuclear Information System (INIS)

    Urbanus, W.H.

    1990-01-01

    This thesis deals with the transport and acceleration of intense ion beams in single-ended Van de Graaff accelerators and the multiple beam rf accelerator MEQALAC (Multiple Electrostatic Quadrupole Array Linear Accelerator). Ch. 2 discusses several beam-envelope calculation techniques and describes the ion-optical components of a 1 MV, high-current, heavy-ion implantation facility and a 2 MV facility for analyzing purposes. The X-ray level of these accelerators is kept low, such that no shielding is needed, by keeping the energy of the secondary electrons sufficiently low, which is accomplished by a suppression system of small permanent magnets built in the acceleration tubes (ch. 3). Ch.'s 4,5 and 6 cover various aspects of stage II of the MEQALAC project. This stage deals with the parallel acceleration of four high-current N + beams from 40 keV to 1 MeV. Acceleration takes place in 32 rf gaps which are part of a modified interdigital H-resonator. In between the accelerating gaps, small electrostatic quadrupoles are mounted, which oppose the space charge forces of the intense ion beams. The lenses are arranged in a periodic focusing structure. A bucket-type plasma ion source is used, which produces both N + and N 2 + ions. In between the ion source and the MEQALAC section, a Low Energy Beam Transport (LEBT) section is mounted which provides for the drift space for a buncher. The latter device transforms the extracted dc beams into bunched beams which are accepted by the MEQALAC section. In ch. 4 the transport of ion beams that contain both N + and N 2 + ions, so-called mixed beams, through the LEBT section is discussed and equations for the current limit of a mixed beam are derived. Bunching of mixed N + , N 2 + beams is discussed in ch. 5. Multichannel acceleration of N + ions with the MEQALAC is discussed in ch. 6. (author). 122 refs.; 67 figs.; 1 tab

  19. Defects induced by helium implantation in SiC

    International Nuclear Information System (INIS)

    Oliviero, E.; Barbot, J.F.; Declemy, A.; Beaufort, M.F.; Oliviero, E.

    2008-01-01

    SiC is one of the considered materials for nuclear fuel conditioning and for the fabrication of some core structures in future nuclear generation reactors. For the development of this advance technology, a fundamental research on this material is of prime importance. In particular, the implantation/irradiation effects have to be understood and controlled. It is with this aim that the structural alterations induced by implantation/irradiation in SiC are studied by different experimental techniques as transmission electron microscopy, helium desorption, X-ray diffraction and Rutherford backscattering spectrometry. In this work, the different types of defects induced by helium implantation in SiC, point or primary defects (obtained at low energy (∼100 eV) until spread defects (obtained at higher energy (until ∼2 MeV)) are exposed. The amorphization/recrystallization and swelling phenomena are presented too. (O.M.)

  20. Lattice damage in ion-implanted silicon-germanium alloys

    International Nuclear Information System (INIS)

    Haynes, T.E.; Holland, O.W.

    1992-08-01

    The damage produced in Si 1-x Ge x alloys (0≤x≤1) by implantation of 70--100 keV 30 Si + has been measured as a function of temperature and fluence by ion channeling. For all compositions, the damage efficiency decreased sharply as the implant temperature was increased between room temperature and 150 degrees C. Furthermore, the damage efficiency in alloys of intermediate compositions (0.34≤x≤0.5) exceeds that in Ge, especially at elevated temperatures, despite the larger cascade energy density in Ge. It is shown that this behavior can be described based on a model in which the point-defect mobility is the dominant factor controlling damage retention, rather than the cascade energy density. This approach provides a framework for understanding other temperature-dependent phenomena related to damage growth in Si-Ge alloys including dose-rate effects and damage saturation in MeV implantation

  1. Genetics evaluation of phosphorus utilization in tropical cowpea ...

    African Journals Online (AJOL)

    Genetics evaluation of phosphorus utilization in tropical cowpea (Vigna ... that responds negatively to RP, using generation mean analysis of the parents, their ... was observed to be below the critical level, phosphorus uptake in the F1 and the ...

  2. Effect of phosphorus sources on phosphorus and nitrogen utilization by three sweet potato cultivars

    International Nuclear Information System (INIS)

    Montanez, A.; Zapata, F.; Kumarasinghe, K.S.

    1996-01-01

    A greenhouse experiment was conducted at the FAO/IAEA Agriculture and Biotechnology Laboratory in Seibersdorf, Austria using three sweet potato cultivars, TIS 2, TIS 3053 and TIS 1487. The three sweet potato cultivars were grown at two levels of phosphorus (0 kg P/kg soil and 60 kg P/kg soil). The fertilizer treatments consisted of two sources of phosphorus, Gafza rock Phosphate and triple super phosphate with 14.19 and 19.76% total phosphorus, respectively. 15 N labelled urea was used to study the nitrogen recovery in tubers from the applied nitrogen fertilizer. The results from these preliminary studies indicate that there is considerable genotypic variation among cultivars in the efficiency with which phosphorus and nitrogen are taken up and used to produce biomass. Their response to different sources of phosphorus are also variable. TIS-2 and TIS-1487 have a greater ability to absorb phosphorus from Gafza rock phosphate and produce higher tube yields indicating their greater potential for using alternative sources of natural phosphate fertilizers more effectively. Gafza rock phosphate also increased accumulation of nitrogen in TIS-1487, a characteristic which will place this cultivar at an advantage when growing in soils low in nitrogen. On an overall basis taking into account tuber yield, phosphorus use efficiency, and nitrogen use efficiency, TIS-2 may be considered the better candidate for introduction into soils poor in resources particularly phosphorus. This study was conducted with a limited number of cultivars due to limitation in the availability of germplasma. In spite of this, the differences in their abilities for phosphorus and nitrogen uptake and use are clearly visible which justifies large scale screening experiments using a broader germplasm base, in the future. (author). 14 refs, 1 fig., 3 tabs

  3. Sargasso Sea phosphorus biogeochemistry: an important role for dissolved organic phosphorus (DOP

    Directory of Open Access Journals (Sweden)

    M. W. Lomas

    2010-02-01

    Full Text Available Inorganic phosphorus (SRP concentrations in the subtropical North Atlantic are some of the lowest in the global ocean and have been hypothesized to constrain primary production. Based upon data from several transect cruises in this region, it has been hypothesized that dissolved organic phosphorus (DOP supports a significant fraction of primary production in the subtropical North Atlantic. In this study, a time-series of phosphorus biogeochemistry is presented for the Bermuda Atlantic Time-series Study site, including rates of phosphorus export. Most parameters have a seasonal pattern, although year-over-year variability in the seasonal pattern is substantial, likely due to differences in external forcing. Suspended particulate phosphorus exhibits a seasonal maximum during the spring bloom, despite the absence of a seasonal peak in SRP. However, DOP concentrations are at an annual maximum prior to the winter/spring bloom and decline over the course of the spring bloom while whole community alkaline phosphatase activities are highest. As a result of DOP bioavailability, the growth of particles during the spring bloom occurs in Redfield proportions, though particles exported from the euphotic zone show rapid and significant remineralization of phosphorus within the first 50 m below the euphotic zone. Based upon DOP data from transect cruises in this region, the southward cross gyral flux of DOP is estimated to support ~25% of annual primary production and ~100% of phosphorus export. These estimates are consistent with other research in the subtropical North Atlantic and reinforce the hypothesis that while the subtropics may be phosphorus stressed (a physiological response to low inorganic phosphorus, utilization of the DOP pool allows production and accumulation of microbial biomass at Redfield proportions.

  4. Effect of phosphorus sources on phosphorus and nitrogen utilization by three sweet potato cultivars

    Energy Technology Data Exchange (ETDEWEB)

    Montanez, A; Zapata, F [FAO/IAEA Agriculture and Biotechnology Lab., Seibersdorf (Austria). Soils Science Unit; Kumarasinghe, K S [Joint FAO/IAEA Div. of Nuclear Techniques in Food and Agriculture, Vienna (Austria). Soil Fertility, Irrigation and Crop Production Section

    1996-07-01

    A greenhouse experiment was conducted at the FAO/IAEA Agriculture and Biotechnology Laboratory in Seibersdorf, Austria using three sweet potato cultivars, TIS 2, TIS 3053 and TIS 1487. The three sweet potato cultivars were grown at two levels of phosphorus (0 kg P/kg soil and 60 kg P/kg soil). The fertilizer treatments consisted of two sources of phosphorus, Gafza rock Phosphate and triple super phosphate with 14.19 and 19.76% total phosphorus, respectively. {sup 15}N labelled urea was used to study the nitrogen recovery in tubers from the applied nitrogen fertilizer. The results from these preliminary studies indicate that there is considerable genotypic variation among cultivars in the efficiency with which phosphorus and nitrogen are taken up and used to produce biomass. Their response to different sources of phosphorus are also variable. TIS-2 and TIS-1487 have a greater ability to absorb phosphorus from Gafza rock phosphate and produce higher tube yields indicating their greater potential for using alternative sources of natural phosphate fertilizers more effectively. Gafza rock phosphate also increased accumulation of nitrogen in TIS-1487, a characteristic which will place this cultivar at an advantage when growing in soils low in nitrogen. On an overall basis taking into account tuber yield, phosphorus use efficiency, and nitrogen use efficiency, TIS-2 may be considered the better candidate for introduction into soils poor in resources particularly phosphorus. This study was conducted with a limited number of cultivars due to limitation in the availability of germplasma. In spite of this, the differences in their abilities for phosphorus and nitrogen uptake and use are clearly visible which justifies large scale screening experiments using a broader germplasm base, in the future. (author). 14 refs, 1 fig., 3 tabs.

  5. Damage and in-situ annealing during ion implantation

    International Nuclear Information System (INIS)

    Sadana, D.K.; Washburn, J.; Byrne, P.F.; Cheung, N.W.

    1982-11-01

    Formation of amorphous (α) layers in Si during ion implantation in the energy range 100 keV-11 MeV and temperature range liquid nitrogen (LN)-100 0 C has been investigated. Cross-sectional transmission electron microscopy (XTEM) shows that buried amorphous layers can be created for both room temperature (RT) and LN temperature implants, with a wider 100 percent amorphous region for the LN cooled case. The relative narrowing of the α layer during RT implantation is attributed to in-situ annealing. Implantation to the same fluence at temperatures above 100 0 C does not produce α layers. To further investigate in situ annealing effects, specimens already containing buried α layers were further irradiated with ion beams in the temperature range RT-400 0 C. It was found that isolated small α zones (less than or equal to 50 diameter) embedded in the crystalline matrix near the two α/c interfaces dissolved into the crystal but the thickness of the 100 percent α layer was not appreciably affected by further implantation at 200 0 C. A model for in situ annealing during implantation is presented

  6. Comparison of secondary ion emission induced in silicon oxide by MeV and KeV ion bombardment

    International Nuclear Information System (INIS)

    Allali, H.; Nsouli, B.; Thomas, J.P.; Szymczak, W.; Wittmaack, K.

    1993-09-01

    The surface and near-surface composition of SiO 2 layers, has been investigated by negative secondary ion emission mass spectrometry (SIMS) using MeV and KeV ion bombardment in combination with time-of-flight (TOF) mass analysis. The spectra recorded in the mass range 0-100 u are dominated by surface impurities, notably hydrocarbons and silicon polyanions incorporating H and OH entities. The characteristic (fragmentation) patterns are quite different for light and high-velocity ion impact. In high-velocity TOF-SIMS analysis of P-doped layers, prepared by chemical vapour deposition (CVD), the mass lines at 63 and 79 u are very prominent and appear to correlate with the phosphorus concentration (PO 2 and PO 3 , respectively). It is shown, however, that for unambiguous P analysis one has to use dynamic SIMS or high mass resolution. (author) 11 refs., 5 figs

  7. Regulating phosphorus from the agricultural sector

    DEFF Research Database (Denmark)

    Hansen, Line Block; Hansen, Lars Gårn; Rubæk, Gitte Holton

    2010-01-01

      Loss of phosphorus (P) from agricultural areas is one of the main contributors to eutrophication of water systems in many European countries. Regulatory systems such as ambient taxes or discharge taxes which are suitable for regulation of N are insufficient for regulating P because these systems...... do not take into account the importance of P already stored in the soils. Phosphorus stored in the soils is the major source of P losses to surface waters, but at the same time crucial for the soils ability to sustain a viable crop production. Even if measures on P losses from agricultural areas...

  8. Quantum effects in ion implanted devices

    International Nuclear Information System (INIS)

    Jamieson, D.N.; Chan, V.; Hudson, F.E.; Andresen, S.E.; Yang, C.; Hopf, T.; Hearne, S.M.; Pakes, C.I.; Prawer, S.; Gauja, E.; Yang, C.; Dzurak, A.S.; Yang, C.; Clark, R.G.; Yang, C.

    2005-01-01

    Fabrication of nanoscale devices that exploit the rules of quantum mechanics to process information presents formidable technical challenges because it will be necessary to control quantum states at the level of individual atoms, electrons or photons. We have developed a pathway to the construction of quantum devices using ion implantation and demonstrate, using charge transport analysis, that the devices exhibit single electron effects. We construct devices that employ two P donors in Si by employing the technique of ion beam induced charge (IBIC) in which single 14 keV P ions can be implanted into ultra-pure silicon by monitoring on-substrate detector electrodes. We have used IBIC with a MeV nuclear microprobe to map and measure the charge collection efficiency in the development of the electrode structure and show that 100% charge collection efficiency can be achieved leading to the fabrication of prototype devices that display quantum effects in the transport of single charge quanta between the islands of implanted donors. (author). 9 refs., 4 figs., 1 tab

  9. Determination of traces of phosphorus using isotope exchange

    International Nuclear Information System (INIS)

    Zeman, A.; Kratzer, K.

    1976-01-01

    A simple and selective radioanalytical method for the determination of phosphorus (0.015 - 5 μg in a 5 ml sample), based on the heterogeneous isotope exchange, has been developed. The sample containing phosphorus is shaken in the presence of molybdate with a standard solution of tetraphenylarsonium molybdophosphate labelled with phosphorus-32 in 1-2 dicloroethan. From the distribution of the activity between the aqueous and organic phases the amount of phosphorus in the sample can be determined. (Authors)

  10. Phosphorus-containing macrocyclic compounds: synthesis and properties

    International Nuclear Information System (INIS)

    Knyazeva, I R; Burilov, Alexander R; Pudovik, Michael A; Habicher, Wolf D

    2013-01-01

    Main trends in the development of methods for the synthesis of phosphorus-containing macrocyclic compounds in the past 15 years are considered. Emphasis is given to reactions producing macrocyclic structures with the participation of a phosphorus atom and other functional groups involved in organophosphorus molecules and to modifications of macrocycles by phosphorus compounds in different valence states. Possibilities of the practical application of phosphorus-containing macrocyclic compounds in difference areas of science and engineering are discussed. The bibliography includes 205 references.

  11. Production of carrier-free phosphorus-33 at MURR

    International Nuclear Information System (INIS)

    Jia, W.; Ketring, A.R.; Schuh, J.; Lanigan, J.; Ma, D.; Manson, L.; Chanley, D.

    1996-01-01

    Phosphorus-33, a new radionuclide used in medical and biochemical research, is produced at the University of Missouri research reactor (MURR) in production quantities. Phosphorus-33 has a longer shelf life and lower dose rates than phosphorus-32. Recently, the MURR and New England Nuclear (NEN) jointly developed a method to recover carrier-free phosphorus-33 as well as the enriched sulfur target using a sublimation technique at reduced pressure

  12. Characterization of junctions produced by medium-energy ion implantation in silicon

    International Nuclear Information System (INIS)

    Monfret, A.

    1970-01-01

    Characteristics of diodes made by implanting 20 keV boron and phosphorus ions into silicon are reviewed. Special features of theses diodes are presented, and correlation with technology is studied. This paper includes three parts: - in the first part, the theory of range distribution is considered for both amorphous and single-crystal targets, - In the second part, a brief description of the experimental conditions is given. - In the third part, the experimental results are presented. The results lead to a schematic model of the component. They also show the influence of cleaning and annealing treatments from which optimized process of fabrication can be determined. In this study, the influence of a two stage annealing process is shown. For phosphorus and boron implants, the first stage is performed at 150 deg. C while the second stage is 450 deg. C for phosphorus and 550 deg. C for boron implants. The implanted diodes are found to exhibit good electrical characteristics. Comparisons with standard diffused diodes are quite favourable. (author) [fr

  13. Phosphorus in virgin peat soils

    Directory of Open Access Journals (Sweden)

    Armi Kaila

    1956-01-01

    coefficient after the elimination of the effects of total P and N contents was only r = 0.136. No significant correlation existed between the organic P content and the N content, r = 0.184. The organic P content of the 217 samples expressed as a percentage of the total P content ranged from 55 to 95 per cent with an average of 78 ± 1 per cent. The proportion of organic P of total P was correlated with the degree of humification, the total correlation coefficient was r = 0.504***, the partial correlation coefficient after the elimination of the effect of the sampling depth was r = 0.427***. No correlation with the sampling depth existed after the elimination of the effect of the degree of humification: the partial correlation coefficient was r = 0.159, whereas the total correlation coefficient was r = 0.334***. A low correlation existed between the percentage of organic P of total P and the pH value even after the elimination of the effect of the degree of humification, r = 0.228*, but the connection with the total P content appeared to be only indirect and arised from the effect of the degree of humification, the total correlation coefficient was r = 0.222*, the partial correlation coefficient r = 0.076. The amount of organic P expressed as a percentage of the organic dry matter ranged from 0.01 to 0.25 per cent with an average of 0.07 ± 0.004. The ratio of N/org.P ranged from 12 to 133 with an average of 45 ± 3. Owing to the low P content of the BCp-group its mean ratio was significantly higher than that of the other groups. The degree of humification did not show any correlation with the ratio of N/org.P. The solubility of inorganic P in 0.5 N acetic acid and in 0.2 N sulphuric acid was highest in the Sp-group. On the average approximately from 15 to 30 per cent of total inorganic P was extracted by the latter solution. The acetic acid extracted only about 2 per cent of the inorganic P in the Cp-group but about 15 per cent in the Sp-group. The phosphorus conditions in

  14. Phosphorus analysis in milk samples by neutron activation analysis method

    International Nuclear Information System (INIS)

    Oliveira, R.M. de; Cunha, I.I.L.

    1991-01-01

    The determination of phosphorus in milk samples by instrumental thermal neutron activation analysis is described. The procedure involves a short irradiation in a nuclear reactor and measurement of the beta radiation emitted by phosphorus - 32 after a suitable decay period. The sources of error were studied and the established method was applied to standard reference materials of known phosphorus content. (author)

  15. Phosphorus Uptake and Partitioning in Maize as Affected by Tillage ...

    African Journals Online (AJOL)

    Higher phosphorus concentrations were found in the ears than in the shoots and leaves at physiological maturity. Tillage x phospho-rus interactions influenced phosphorus partitioning in the ears and the leaves on the Dystric Cam-bisol but not on the Ferric Acrisol. PUE in the plant parts were significantly higher under ...

  16. Reaching ultra low phosphorus concentrations by filtration techniques

    NARCIS (Netherlands)

    Scherrenberg, S.M.

    2011-01-01

    This research deals with tertiary treatment techniques used for the removal of phosphorus from wastewater treatment plant (WWTP) effluent. The main objective of this research is to obtain ultra low total phosphorus (<0.15 mg total phosphorus/L) concentrations by coagulation, flocculation and

  17. Comparison of proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Barik, S; Tan, H H; Jagadish, C [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

    2007-05-02

    We report and compare proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots (QDs). After ion implantation at 20-300 deg. C, the QDs are rapid thermally annealed at 850 deg. C for 30 s. Proton implantation induces less energy shift than P ion implantation for a given concentration of atomic displacements due to the more efficient dynamic annealing of the defects created by protons. The implantation-induced energy shift reaches a maximum value of about 260 meV for a dose of 5 x 10{sup 12} ions cm{sup -2} in the P ion implanted QDs, which also show narrower PL linewidths compared to the proton implanted QDs. We also report the effects of an InGaAs top cap layer on the ion implantation-induced QD intermixing and show that defect production and annihilation processes evolve differently in InGaAs and InP layers and vary with the implantation temperature. When the implantation is performed at higher temperatures, the energy shift of the P ion implanted QDs capped with an InP layer increases due to the reduction in larger defect cluster formation at higher temperatures, while the energy shift of the proton implanted QDs decreases due to increased dynamic annealing irrespective of their cap layers.

  18. Scattering of 130 MeV helions on 58Ni

    International Nuclear Information System (INIS)

    Djaloeis, A.; Alderliesten, C.; Bojowald, J.; Oelert, W.; Turek, P.

    1982-01-01

    Angular distributions for the tau + 58 Ni scattering to the (g.s., 0 + ) (1.45 MeV, 2 + ) and giant resonance (Esub(x) approximately 63Asup(-1/3) MeV) states in 58 Ni have been measured at Esub(tau) = 130 MeV in an angular range thetasub(c.m.) = 6 0 -83 0 . Optical model and DWBA analyses have been performed. The use of helion optical potentials with either a volume (Woods-Saxon) or a surface (Woods-Saxon derivative) absorption results in good fits to the g.s. and 1.45 MeV data. However, the volume absorption gives consistently a better fit quality. The discrete ambiguity of the helion optical potential has been resolved in favour of the shallow potential family. The giant resonance is found to have a dominant quadrupole (L=2) character with about 6% (EWSR) L=4 admixture. (Auth.)

  19. Performances of large BGO crystals below 20 MeV

    International Nuclear Information System (INIS)

    Burq, J.P.; Chemarin, M.; El Mamouni, H.

    1986-11-01

    This paper presents the performances of large tapered BGO crystals to low energy photons of 6 to 20 MeV. The read-out of the crystals was made with large area photodiodes associated to shaping amplifiers

  20. Optical effects of ion implantation

    International Nuclear Information System (INIS)

    Townsend, P.D.

    1987-01-01

    The review concerns the effects of ion implantation that specifically relate to the optical properties of insulators. Topics which are reviewed include: ion implantation, ion range and damage distributions, colour centre production by ion implantation, high dose ion implantation, and applications for integrated optics. Numerous examples are presented of both diagnostic and industrial examples of ion implantation effects in insulators. (U.K.)

  1. Phosphorus vacancy cluster model for phosphorus diffusion gettering of metals in Si

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Renyu; Trzynadlowski, Bart; Dunham, Scott T. [Department of Electrical Engineering, University of Washington, Seattle, Washington 98195 (United States)

    2014-02-07

    In this work, we develop models for the gettering of metals in silicon by high phosphorus concentration. We first performed ab initio calculations to determine favorable configurations of complexes involving phosphorus and transition metals (Fe, Cu, Cr, Ni, Ti, Mo, and W). Our ab initio calculations found that the P{sub 4}V cluster, a vacancy surrounded by 4 nearest-neighbor phosphorus atoms, which is the most favorable inactive P species in heavily doped Si, strongly binds metals such as Cu, Cr, Ni, and Fe. Based on the calculated binding energies, we build continuum models to describe the P deactivation and Fe gettering processes with model parameters calibrated against experimental data. In contrast to previous models assuming metal-P{sub 1}V or metal-P{sub 2}V as the gettered species, the binding of metals to P{sub 4}V satisfactorily explains the experimentally observed strong gettering behavior at high phosphorus concentrations.

  2. Ion implantation in semiconductors

    International Nuclear Information System (INIS)

    Gusev, V.; Gusevova, M.

    1980-01-01

    The historical development is described of the method of ion implantation, the physical research of the method, its technological solution and practical uses. The method is universally applicable, allows the implantation of arbitrary atoms to an arbitrary material, ensures high purity of the doping element. It is linked with sample processing at low temperatures. In implantation it is possible to independently change the dose and energy of the ions thereby affecting the spatial distribution of the ions. (M.S.)

  3. Ion implantation in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gusev, V; Gusevova, M

    1980-06-01

    The historical development of the method of ion implantation, the physical research of the method, its technological solution and practical uses is described. The method is universally applicable, allows the implantation of arbitrary atoms to an arbitrary material and ensures high purity of the doping element. It is linked with sample processing at low temperatures. In implantation it is possible to independently change the dose and energy of the ions thereby affecting the spatial distribution of the ions.

  4. Trends in Cochlear Implants

    OpenAIRE

    Zeng, Fan-Gang

    2004-01-01

    More than 60,000 people worldwide use cochlear implants as a means to restore functional hearing. Although individual performance variability is still high, an average implant user can talk on the phone in a quiet environment. Cochlear-implant research has also matured as a field, as evidenced by the exponential growth in both the patient population and scientific publication. The present report examines current issues related to audiologic, clinical, engineering, anatomic, and physiologic as...

  5. Positron-electron autocorrelation function study of E-center in phosphorus-doped silicon

    International Nuclear Information System (INIS)

    Ho, K.F.; Beling, C.D.; Fung, S.; Biasini, M.; Ferro, G.; Gong, M.

    2004-01-01

    Two dimensional fourier transformed angular correlation of annihilation radiation (2D-FT-ACAR) spectra have been taken for 10 19 cm -3 phosphorus-doped Si in the as grown state and after being subjected to 1.8 MeV e - fluences of 2 x 10 18 cm -2 . In the spectra of the irradiated samples, the zero-crossing points are observed to displace outwards from the bravais lattice positions. It is suggested that this results from positrons annihilating with electrons in localized orbitals at the defect site. An attempt is made to extract just the component of the defect's positron-electron autocorrelation function that relates to the localized defect orbitals. It is argued that such an extracted real-space function may provide a suitable means for obtaining a mapping of localized defect orbitals. (orig.)

  6. A review of phosphorus removal structures

    DEFF Research Database (Denmark)

    Penn, Chad; Chagas, Isis; Klimeski, Aleksandar

    2017-01-01

    Controlling dissolved phosphorus (P) losses to surface waters is challenging as most conservation practices are only effective at preventing particulate P losses. As a result, P removal structures were developed to filter dissolved P from drainage water before reaching a water body. While many P ...

  7. The future of phosphorus in our hands

    NARCIS (Netherlands)

    Shepherd, J.G.; Kleemann, Rosanna; Bahri-Esfahani, Jaleh; Hudek, Lee; Suriyagoda, Lalith; Vandamme, Elke; Dijk, van K.C.

    2016-01-01

    We live in a global phosphorus (P) system paradox. P access is becoming increasingly limiting, leading to food insecurity but at the same time an over-application or abundance of P in many agricultural and urban settings is causing environmental degradation. This has been recognised in the

  8. Stewardship to tackle global phosphorus inefficiency

    NARCIS (Netherlands)

    Withers, P.J.A.; Dijk, van K.C.; Neset, T.S.S.; Nesme, Thomas; Oenema, Oene; Rubæk, G.H.; Schoumans, O.F.; Smit, Bert; Pellerin, Sylvain

    2015-01-01

    The inefficient use of phosphorus (P) in the food chain is a threat to the global aquatic environment and the health and well-being of citizens, and it is depleting an essential finite natural resource critical for future food security and ecosystem function. We outline a strategic framework of

  9. Process for uranium recovery in phosphorus compounds

    International Nuclear Information System (INIS)

    Demarthe, J.M.; Solar, Serge.

    1980-01-01

    Process for uranium recovery in phosphorus compounds with an organic phase containing a dialkylphosphoric acid. A solubilizing agent constituted of an heavy alcohol or a phosphoric acid ester or a tertiary phosphine oxide or octanol-2, is added to the organic phase for solubilization of the uranium and ammonium dialkyl pyrophosphate [fr

  10. Phosphate recycling in the phosphorus industry

    NARCIS (Netherlands)

    Schipper, W.J.; Klapwijk, A.; Potjer, A.; Rulkens, W.H.; Temmink, B.G.; Kiestra, F.D.G.; Lijmbach, A.C.M.

    2001-01-01

    The feasibility of phosphate recycling in the white phosphorus production process is discussed. Several types of materials may be recycled, provided they are dry inorganic materials, low in iron, copper and zinc. Sewage sludge ash may be used if no iron is used for phosphate precipitation in the

  11. Estimating phosphorus intake by grazing sheep

    African Journals Online (AJOL)

    phosphorus levels in various organs, tissues, bones, body fluids or excretory products of sheep reflected dietary ... did decrease bone mineral deposition slightly. Rumen fluid P and total daily urinary P levels did .... which were alike in composition except for their levels of. P and Ca. After 98 days rib biopsy specimens were.

  12. Flotation of uraniferous phosphorus ore from Itataia

    International Nuclear Information System (INIS)

    Aquino, J.A. de

    1984-01-01

    Flotation conditions, in laboratory and pilot scale, were established in a sample of Itataia uraniferous phosphorus ore which was basically constitute of apatite and calcite. The system of reagents-tall oil, collamil and sodium silicate-was studied in rougher, scavenger and cleaner stage. (M.A.C.) [pt

  13. Nanotubes based on monolayer blue phosphorus

    KAUST Repository

    Montes Muñoz, Enrique

    2016-07-08

    We demonstrate structural stability of monolayer zigzag and armchair blue phosphorus nanotubes by means of molecular dynamics simulations. The vibrational spectrum and electronic band structure are determined and analyzed as functions of the tube diameter and axial strain. The nanotubes are found to be semiconductors with a sensitive indirect band gap that allows flexible tuning.

  14. Phosphorus Processing—Potentials for Higher Efficiency

    Directory of Open Access Journals (Sweden)

    Ludwig Hermann

    2018-05-01

    Full Text Available In the aftermath of the adoption of the Sustainable Development Goals (SDGs and the Paris Agreement (COP21 by virtually all United Nations, producing more with less is imperative. In this context, phosphorus processing, despite its high efficiency compared to other steps in the value chain, needs to be revisited by science and industry. During processing, phosphorus is lost to phosphogypsum, disposed of in stacks globally piling up to 3–4 billion tons and growing by about 200 million tons per year, or directly discharged to the sea. Eutrophication, acidification, and long-term pollution are the environmental impacts of both practices. Economic and regulatory framework conditions determine whether the industry continues wasting phosphorus, pursues efficiency improvements or stops operations altogether. While reviewing current industrial practice and potentials for increasing processing efficiency with lower impact, the article addresses potentially conflicting goals of low energy and material use as well as Life Cycle Assessment (LCA as a tool for evaluating the relative impacts of improvement strategies. Finally, options by which corporations could pro-actively and credibly demonstrate phosphorus stewardship as well as options by which policy makers could enforce improvement without impairing business locations are discussed.

  15. interaction between phosphorus fertilizer and arbuscular ...

    African Journals Online (AJOL)

    userpc

    examine the interaction between Phosphorus (P) fertilizer and Arbuscular Mycorrhizal Fungal ... recorded 28% and 4% total plant dry yield increment respectively over control. This study shows that ... ratio 1:3 inoculant: water, application per ... Table 1: Effect of P and AMF on the dry yield components of cassava (t ha-1).

  16. Phosphate recycling in the phosphorus industry

    NARCIS (Netherlands)

    Schipper, W.J.; Klapwijk, A.; Potjer, B.; Rulkens, W.H.; Temmink, B.G.; Kiestra, F.D.G.; Lijmbach, A.C.M.

    2004-01-01

    The article describes the potential and limitations for recovery of phosphate from secondary materials in the production process for white phosphorus. This thermal process involves the feeding of phosphate rock, cokes and pebbles to a furnace. The reducing conditions in the furnace promote the

  17. 28 PHOSPHORUS FORMS AND DISTRIBUTION IN SELECTED ...

    African Journals Online (AJOL)

    sys01

    Coleman and Thomas (1967). Total phosphorus in the soils was determined by perchloric acid digestion (Jackson, 1958) and organic P was estimated by the difference between 13 M HCL extractable inorganic P, before and after ignition, by the method of Leg and Black (1955). Inorganic P was fractionated by method of.

  18. Phosphorus and phytase levels for layer hens

    Directory of Open Access Journals (Sweden)

    Juliana Cristina Ramos Rezende

    2013-02-01

    Full Text Available The objective of this research was to evaluate the performance and bone quality of laying hens after peak production fed diets containing phosphorus levels and phytase. An experiment was conducted with 384 Hy-line distributed in a completely randomized in a factorial 4 x 3 with 4 levels of available phosphorus and 3 levels of phytase. The experimental period was divided into four periods of 28 days, at the end of each cycle were determined experimental feed intake, egg production, egg weight, feed conversion, mortality, and average egg weight, shell thickness, Haugh units and specific gravity. At the end of the experimental period were determined amounts of calcium and phosphorus excreted by the method of total excreta collection and a fowl per experimental unit was sacrificed for collection of bones and evaluation of width, length and level of robustness from femur and tibia. There was interaction between phosphorus levels and phytase on feed intake, feed conversion and percentage of posture. For inclusion levels of phytase all egg quality variables showed no significant differences. The treatments did not affect bone characteristics of laying hens.

  19. Risk assessment methodologies for predicting phosphorus losses

    NARCIS (Netherlands)

    Schoumans, O.F.; Chardon, W.J.

    2003-01-01

    Risk assessment parameters are needed to assess the contribution of phosphorus (P) losses from soil to surface water, and the effectiveness of nutrient and land management strategies for the reduction of P loss. These parameters need to take into account the large temporal and spatial variation in P

  20. Stability of phosphorus species in seawater

    Digital Repository Service at National Institute of Oceanography (India)

    DileepKumar, M.; Somasundar, K.; Rajendran, A.

    Relative stabilities of various oxidation states, oxyacids and dissolved inorganic complexes of phosphorus in anoxic and oxic marine environments are elucidated. H sub(3) PO sub(2)/P super(0) and H sub(2) PO sub(2)/p super(0) are the strong reducing...

  1. Stewardship to tackle global phosphorus inefficiency

    DEFF Research Database (Denmark)

    Withers, Paul J. A.; Dijk, Kimo van; Neset, Tina-Simone

    2015-01-01

    The inefficient use of phosphorus (P) in the food chain is a threat to the global aquatic environment and the health and well-being of citizens, and it is depleting an essential finite natural resource critical for future food security and ecosystem function. We outline a strategic framework of 5R...

  2. Phosphorus recovery from sewage sludge char ash

    NARCIS (Netherlands)

    Atienza-Martinez, M.; Gea, G.; Arauzo, J.; Kersten, Sascha R.A.; Kootstra, A.M.J.

    2014-01-01

    Phosphorus was recovered from the ash obtained after combustion at different temperatures (600 °C, 750 °C and 900 °C) and after gasification (at 820 °C using a mixture of air and steam as fluidising agent) of char from sewage sludge fast pyrolysis carried out at 530 °C. Depending on the leaching

  3. Bacteria as transporters of phosphorus through soil

    DEFF Research Database (Denmark)

    Glæsner, N.; Bælum, Jacob; Jacobsen, C. S.

    2016-01-01

    The transport of phosphorus (P) from agricultural land has led to the eutrophication of surface waters worldwide, especially in areas with intensive animal production. In this research, we investigated the role of bacteria in the leaching of P through three agricultural soils with different...

  4. Phosphorus supplementation of Karakul sheep grazing natural ...

    African Journals Online (AJOL)

    The phosphorus (P) status of adult Karakul ewes grazing natural pasture was determined by measuring the P content of blood, saliva, faecal, and bone samples. The ewes were divided into four groups of 20 ewes each, viz. ewes supplemented with P+ and P- which lambed during May and October. All lambs born were ...

  5. Use of reactive materials to bind phosphorus

    NARCIS (Netherlands)

    Chardon, W.J.; Groenenberg, J.E.; Temminghoff, E.J.M.; Koopmans, G.F.

    2012-01-01

    Phosphorus (P) losses from agricultural soils have caused surface water quality impairment in many regions of the world, including The Netherlands. Due to the large amounts of P accumulated in Dutch soils, the generic fertilizer and manure policy will not be sufficient to reach in time the surface

  6. Ion implantation technology

    CERN Document Server

    Downey, DF; Jones, KS; Ryding, G

    1993-01-01

    Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. New structures and possible approach

  7. [Silastic implant and synovitis].

    Science.gov (United States)

    Sennwald, G

    1989-07-22

    The silastic implant based on siloxane polymere induces granulomatous synovitis in certain predisposed individuals, a reaction which may continue even after removal of the implant. This is also true of a prosthesis of the trapezium in two of our patients, though to a lesser degree. This is probably the reason why the problem has not yet been widely recognized. The hypothesis is put forward that an enzymatic predisposition may allow chemical degradation of the fragmented silastic implant into a toxic component responsible for the pathologic condition. The slow progression of the lesions is a challenge for the future and puts in question the further use of silastic implants.

  8. Cochlear implant magnet retrofit.

    Science.gov (United States)

    Cohen, N L; Breda, S D; Hoffman, R A

    1988-06-01

    An implantable magnet is now available for patients who have received the standard Nucleus 22-channel cochlear implant and who are not able to wear the headband satisfactorily. This magnet is attached in piggy-back fashion to the previously implanted receiver/stimulator by means of a brief operation under local anesthesia. Two patients have received this magnet retrofit, and are now wearing the headset with greater comfort and satisfaction. It is felt that the availability of this magnet will increase patient compliance in regard to hours of implant usage.

  9. Phosphorus effect on fracture properties of structural steels

    International Nuclear Information System (INIS)

    Goritskij, V.M.; Guseva, I.A.

    1985-01-01

    Phosphorus content is studied for its effect on fracture peculiarities and fracture toughness. It is supposed that the phosphorus effect on ductile fractures is associated with phosphorus segregation on the ferrite-carbide interfaces. An increase of the phosphorus content in heat-treated 10KhSND steel from 0.020 up to 0.043 wt.% results in a decrease of the pore size and asub(p) value. Close linear correlation is established between critical temperature of embrittlement T 50 and √ asub(p) or √ KC values for a number of structural steels with different phosphorus content

  10. Biological phosphorus uptake under anoxic and aerobic conditions

    DEFF Research Database (Denmark)

    Kerrn-Jespersen, Jens Peter; Henze, Mogens

    1993-01-01

    Biological phosphorus removal was investigated under anoxic and aerobic conditions. Tests were made to establish whether phosphorus accumulating bacteria can take up phosphate under anoxic conditions and thus utilise nitrate as oxidant. Furthermore, it was tested how the amount of organic matter...... as oxidant. The phosphorus uptake was more rapid under aerobic conditions than under anoxic conditions. The explanation of this is that all phosphorus accumulating bacteria take up phosphate under aerobic conditions, whereas only part of the phosphorus accumulating bacteria take up phosphate under anoxic...

  11. Structural and compositional characterization of LiNbO{sub 3} crystals implanted with high energy iron ions

    Energy Technology Data Exchange (ETDEWEB)

    Sada, C., E-mail: cinzia.sada@unipd.i [Universita di Padova and CNISM, Dipartimento di Fisica, Via Marzolo 8, 35131 Padova (Italy); Argiolas, N.; Bazzan, M.; Ciampolillo, M.V.; Zaltron, A.M.; Mazzoldi, P. [Universita di Padova and CNISM, Dipartimento di Fisica, Via Marzolo 8, 35131 Padova (Italy); Agarwal, D.C.; Avastshi, D.K. [Inter-University Accelerator Centre, Post Box-10502, New Delhi 110067 (India)

    2010-10-01

    Iron ions were implanted with a total fluence of 6 x 10{sup 17} ions/m{sup 2} into lithium niobate crystals by way of a sequential implantation at different energies of 95, 100 and 105 MeV respectively through an energy retarder Fe foil to get a uniform Fe doping of about few microns from the surface. The implanted crystals were then annealed in air in the range 200-400 {sup o}C for different durations to promote the crystalline quality that was damaged by implantation. In order to understand the basic phenomena underlying the implantation process, compositional in-depth profiles obtained by the secondary ion mass spectrometry were correlated to the structural properties of the implanted region measured by the high resolution X-ray diffraction depending on the process parameters. The optimised preparation conditions are outlined in order to recover the crystalline quality, essential for integrated photorefractive applications.

  12. Synchrotron Topographic and Diffractometer Studies of Buried Layered Structures Obtained by Implantation with Swift Heavy Ions in Silicon Single Crystals

    International Nuclear Information System (INIS)

    Wierzchowski, W.; Wieteska, K.; Zymierska, D.; Graeff, W.; Czosnyka, T.; Choinski, J.

    2006-01-01

    A distribution of crystallographic defects and deformation in silicon crystals subjected to deep implantation (20-50 μm) with ions of the energy of a few MeV/amu is studied. Three different buried layered structures (single layer, binary buried structure and triple buried structure) were obtained by implantation of silicon single crystals with 184 MeV argon ions, 29.7 MeV boron ions, and 140 MeV argon ions, each implantation at a fluency of 1x10 14 ions cm -2 . The implanted samples were examined by means of white beam X-ray section and projection topography, monochromatic beam topography and by recording local rocking curves with the beam restricted to 50 x 50 μm 2 . The experiment pointed to a very low level of implantation-induced strain (below 10 -5 ). The white beam Bragg case section experiment revealed a layer producing district black contrast located at a depth of the expected mean ion range. The presence of these buried layered structures in studied silicon crystals strongly affected the fringe pattern caused by curvature of the samples. In case of white beam projection and monochromatic beam topographs the implanted areas were revealed as darker regions with a very tiny grain like structure. One may interpret these results as the effect of considerable heating causing annihilation of point defects and formation of dislocation loops connected with point defect clusters. (author)

  13. The reaction p12C→ηX from Tp=800 MeV to Tp=1500 MeV

    International Nuclear Information System (INIS)

    Chiavassa, E.; Dellacasa, G.; De Marco, N.; De Oliveira Martins, O.; Gallio, M.; Guaita, P.; Musso, A.; Piccotti, A.; Scomparin, E.; Vercellin, E.

    1998-01-01

    The reaction p 12 C→nX has been studied, at several proton kinetic energies ranging from 800 MeV to 1500 MeV, at the proton synchrotron Saturne at Saclay. The measured doubly differential cross-sections are presented and discussed in the framework of a simple theoretical model. The model fails in describing the deepest subthreshold data while the above-threshold data are fairly well reproduced. (orig.)

  14. Sewage-effluent phosphorus: A greater risk to river eutrophication than agricultural phosphorus?

    International Nuclear Information System (INIS)

    Jarvie, Helen P.; Neal, Colin; Withers, Paul J.A.

    2006-01-01

    Phosphorus (P) concentrations from water quality monitoring at 54 UK river sites across seven major lowland catchment systems are examined in relation to eutrophication risk and to the relative importance of point and diffuse sources. The over-riding evidence indicates that point (effluent) rather than diffuse (agricultural) sources of phosphorus provide the most significant risk for river eutrophication, even in rural areas with high agricultural phosphorus losses. Traditionally, the relative importance of point and diffuse sources has been assessed from annual P flux budgets, which are often dominated by diffuse inputs in storm runoff from intensively managed agricultural land. However, the ecological risk associated with nuisance algal growth in rivers is largely linked to soluble reactive phosphorus (SRP) concentrations during times of ecological sensitivity (spring/summer low-flow periods), when biological activity is at its highest. The relationships between SRP and total phosphorus (TP; total dissolved P + suspended particulate P) concentrations within UK rivers are evaluated in relation to flow and boron (B; a tracer of sewage effluent). SRP is the dominant P fraction (average 67% of TP) in all of the rivers monitored, with higher percentages at low flows. In most of the rivers the highest SRP concentrations occur under low-flow conditions and SRP concentrations are diluted as flows increase, which is indicative of point, rather than diffuse, sources. Strong positive correlations between SRP and B (also TP and B) across all the 54 river monitoring sites also confirm the primary importance of point source controls of phosphorus concentrations in these rivers, particularly during spring and summer low flows, which are times of greatest eutrophication risk. Particulate phosphorus (PP) may form a significant proportion of the phosphorus load to rivers, particularly during winter storm events, but this is of questionable relevance for river eutrophication

  15. Helium implanted RAFM steels studied by positron beam Doppler Broadening and Thermal Desorption Spectroscopy

    International Nuclear Information System (INIS)

    Carvalho, I; Schut, H; Fedorov, A; Luzginova, N; Desgardin, P; Sietsma, J

    2013-01-01

    Reduced Activation Ferritic/Martensitic steels are being extensively studied because of their foreseen application in fusion and Generation IV fission reactors. To mimic neutron irradiation conditions, Eurofer97 samples were implanted with helium ions at energies of 500 keV and 2 MeV and doses of 5x10 15 -10 16 He /cm 2 , creating atomic displacements in the range 0.07–0.08 dpa. The implantation induced defects were characterized by positron beam Doppler Broadening (DB) and Thermal Desorption Spectroscopy (TDS). The DB data could be fitted with one or two layers of material, depending on the He implantation energy. The S and W values obtained for the implanted regions suggest the presence of not only vacancy clusters but also positron traps of the type present in a sub-surface region found on the reference sample. The traps found in the implanted layers are expected to be He n V m clusters. For the 2 MeV, 10 16 He/cm 2 implanted sample, three temperature regions can be observed in the TDS data. Peaks below 450 K can be ascribed to He released from vacancies in the neighbourhood of the surface, the phase transition is found at 1180 K and the peak at 1350 K is likely caused by the migration of bubbles.

  16. Percutaneous and skeletal biocarbon implants

    Science.gov (United States)

    Mooney, V.

    1977-01-01

    Review of carbon implants developed by NASA discussed four different types of implants and subsequent improvements. Improvements could be of specific interest to rehabilitation centers and similar organizations.

  17. Degradable Implantate: Entwicklungsbeispiele

    Science.gov (United States)

    Ruffieux, Kurt; Wintermantel, Erich

    Resorbierbare Implantate werden seit mehreren Jahrzehnten in der Implantologie eingesetzt. Bekannt wurden diese Biomaterialien mit dem Aufkommen von sich selbst auflösenden Nahtfäden auf der Basis von synthetisch hergestellten Polylactiden und Polyglycoliden in den 70er Jahren. In einem nächsten Schritt wurden Implantate wie Platten und Schrauben zur Gewebefixation aus den gleichen Biomaterialien hergestellt.

  18. Risks of Breast Implants

    Science.gov (United States)

    ... have a risk of developing a type of cancer called breast implant-associated anaplastic large cell lymphoma (BIA-ALCL) in the breast tissue surrounding the implant. BIA-ALCL is not breast cancer. Women diagnosed with BIA-ALCL may need to ...

  19. Ion implantation of metals

    International Nuclear Information System (INIS)

    Dearnaley, G.

    1976-01-01

    In this part of the paper descriptions are given of the effects of ion implantation on (a) friction and wear in metals; and (b) corrosion of metals. In the study of corrosion, ion implantation can be used either to introduce a constituent that is known to convey corrosion resistance, or more generally to examine the parameters which control corrosion. (U.K.)

  20. Ion implantation into diamond

    International Nuclear Information System (INIS)

    Sato, Susumu

    1994-01-01

    The graphitization and the change to amorphous state of diamond surface layer by ion implantation and its characteristics are reported. In the diamond surface, into which more than 10 16 ions/cm 2 was implanted, the diamond crystals are broken, and the structure changes to other carbon structure such as amorphous state or graphite. Accompanying this change of structure, the electric conductivity of the implanted layer shows two discontinuous values due to high resistance and low resistance. This control of structure can be done by the temperature of the base during the ion implantation into diamond. Also it is referred to that by the base temperature during implantation, the mutual change of the structure between amorphous state and graphite can be controlled. The change of the electric resistance and the optical characteristics by the ion implantation into diamond surface, the structural analysis by Raman spectroscopy, and the control of the structure of the implanted layer by the base temperature during implantation are reported. (K.I.)

  1. TEM study of the ion beam induced damage during 14 kev P+ implantation in silicon

    International Nuclear Information System (INIS)

    Rubanov, S.; Tamanyan, G.; Hudson, F.; Jamieson, D.N.; McCallum, J.C.; Prawer, S.

    2005-01-01

    The proposed silicon-based quantum computer architecture comprises an array of phosphorus donor atoms (qubits) positioned with nanometre accuracy beneath the surface of a semiconductor host, using a single ion implantation technique. The average depth of the implanted ions (the projected range R p ), lateral range R p 1, and the distribution of ions about that depth can be approximated as two-dimensional Gaussian with standard deviation ΔR p and ΔR p 1 (lateral straggle). Using transmission electron microscopy (TEM) we studied ion beam induced damage after 14 keV P + implantation in Si. The TEM images allowed us to compare the depth of the amorphous cluster formation to R p , R p 1, ΔR p 1 calculated from SRIM and hence determine evidence for the limitation on the accuracy of the position of the implanted ions imposed by straggling. (author). 4 refs., 3 figs

  2. InGaAsP/InP quantum well buried heterostructure waveguides produced by ion implantation

    International Nuclear Information System (INIS)

    Zucker, J.E.; Jones, K.L.; Tell, B.; Brown-Goebeler, K.; Joyner, C.H.; Miller, B.I.; Young, M.G.

    1992-01-01

    Formation of buried InGaAsP/InP quantum well wave-guides by means of phosphorus ion implantation and thermal annealing during regrowth is demonstrated. Absorption spectra of implanted and unimplanted regions are used to estimate the induced index difference, which is of the order of 1% at 1.55μm. Calculated mode intensities are in good agreement with the observed near field intensity patterns. With this etchless implant technique, we achieve a significant reduction in propagation loss for singlemode pin waveguides relative to etched semi-insulating planar buried heterostructure waveguides fabricated from the same quantum well structure. In addition to reduced scattering loss, buried quantum well waveguides produced by ion implantation are more manufacturable because fewer and less-critical processing steps are involved. (author)

  3. P- and N-type implantation doping of GaN with Ca and O

    International Nuclear Information System (INIS)

    Zolper, J.C.; Wilson, R.G.; Pearton, S.J.

    1996-01-01

    III-N photonic devices have made great advances in recent years following the demonstration of doping of GaN p-type with Mg and n-type with Si. However, the deep ionization energy level of Mg in GaN (∼ 160 meV) limits the ionized of acceptors at room temperature to less than 1.0% of the substitutional Mg. With this in mind, the authors used ion implantation to characterize the ionization level of Ca in GaN since Ca had been suggested by Strite to be a shallow acceptor in GaN. Ca-implanted GaN converted from n-to-p type after a 1,100 C activation anneal. Variable temperature Hall measurements give an ionization level at 169 meV. Although this level is equivalent to that of Mg, Ca-implantation may have advantages (shallower projected range and less straggle for a given energy) than Mg for electronic devices. In particular, the authors report the first GaN device using ion implantation doping. This is a GaN junction field effect transistor (JFET) which employed Ca-implantation. A 1.7 microm JFET had a transconductance of 7 mS/mm, a saturation current at 0 V gate bias of 33 mA/mm, a f t of 2.7 GHz, and a f max of 9.4 GHz. O-implantation was also studied and shown to create a shallow donor level (∼ 25 meV) that is similar to Si. SIMS profiles of as-implanted and annealed samples showed no measurable redistribution of either Ca or O in GaN at 1,125 C

  4. Phosphorus recycling from an unexplored source by polyphosphate accumulating microalgae and cyanobacteria – a step to phosphorus security in agriculture

    Directory of Open Access Journals (Sweden)

    Chandan eMukherjee

    2015-12-01

    Full Text Available Phosphorus (P, an essential element required for crop growth has no substitute. The global food security depends on phosphorus availability in soil for crop production. World phosphorus reserves are fast depleting and with an annual increase of 2.3% in phosphorus demand, the current reserves will be exhausted in coming 50-100 years. India and other Western countries are forced to import phosphorus fertilizers at high costs to meet their agricultural demands due to uneven distribution of phosphate rocks on earth. The present study from India, aims to draw attention to an unnoticed source of phosphorus being wasted as parboiled rice mill effluent and subsequent bio-recovery of the valuable element from this unconventional source. The research was conducted in West Bengal, India, a state with the highest number of parboiled rice mills where its effluent carries on an average ~40 mg/L of soluble phosphorus. Technology to recover and recycle this wastewater P in India in a simple, inexpensive mode is yet to be optimized. Our strategy to use microalgae, Chlorella sp. and cyanobacteria, Cyanobacterium sp., Lyngbya sp. and Anabaena sp. to sequester the excess phosphorus from the effluent as polyphosphate inclusions and its subsequent recycling as slow and moderate release phosphorus biofertilizers to aid plant growth, preventing phosphorus loss and pollution, is a contemporary venture to meet the need of the hour. These polyphosphate accumulating microorganisms play a dual role of remediation and recovery of phosphorus, preliminarily validated in laboratory scale.

  5. Number of implants for mandibular implant overdentures: a systematic review

    Science.gov (United States)

    Lee, Jeong-Yol; Kim, Ha-Young; Bryant, S. Ross

    2012-01-01

    PURPOSE The aim of this systematic review is to address treatment outcomes of Mandibular implant overdentures relative to implant survival rate, maintenance and complications, and patient satisfaction. MATERIALS AND METHODS A systematic literature search was conducted by a PubMed search strategy and hand-searching of relevant journals from included studies. Randomized Clinical Trials (RCT) and comparative clinical trial studies on mandibular implant overdentures until August, 2010 were selected. Eleven studies from 1098 studies were finally selected and data were analyzed relative to number of implants. RESULTS Six studies presented the data of the implant survival rate which ranged from 95% to 100% for 2 and 4 implant group and from 81.8% to 96.1% for 1 and 2 implant group. One study, which statistically compared implant survival rate showed no significant differences relative to the number of implants. The most common type of prosthetic maintenance and complications were replacement or reattaching of loose clips for 2 and 4 implant group, and denture repair due to the fracture around an implant for 1 and 2 implant groups. Most studies showed no significant differences in the rate of prosthetic maintenance and complication, and patient satisfaction regardless the number of implants. CONCLUSION The implant survival rate of mandibular overdentures is high regardless of the number of implants. Denture maintenance is likely not inflenced substantially by the number of implants and patient satisfaction is typically high again regardless os the number of implants. PMID:23236572

  6. The location and nature of accumulated phosphorus in seven sludges from activated sludge plants which exhibited enhanced phosphorus removal

    International Nuclear Information System (INIS)

    Buchan, L.

    1981-01-01

    Electron microscopy combined with the energy dispersive analysis of X-rays (EDX) has been used to examine the nature of the phosphorus accumulated in sludges from seven activated sludge plants exhibiting enhanced phosphorus removal. Large phosphorus accumulations were located in identical structures in the sludges examined. The phosphorus was located in large electron-dense bodies, within large bacterial cells which were characteristically grouped in clusters. The calcium:phosphorus ratio of these electron-dense bodies precluded them from being any form of calcium phosphate precipitate. Quantitative analysis indicated that the electron-dense bodies contained in excess of 30% phosphorus. The results obtained are supportive of a biological mechanism of enhanced phosphorus uptake in activated sludge

  7. Ion implantation into iron

    International Nuclear Information System (INIS)

    Iwaki, Masaya

    1978-01-01

    The distribution of implanted ions in iron, the friction characteristics and the corrosion of iron were studied. The distribution of Ni or Cr ions implanted into mild steel was measured. The accelerated voltage was 150 keV, and the beam current density was about 2 microampere/cm 2 . The measurement was made with an ion microanalyzer. The measured distribution was compared with that of LSS theory. Deep invasion of Ni was seen in the measured distribution. The distribution of Cr ions was different from the distribution calculated by the LSS theory. The relative friction coefficient of mild steel varied according to the dose of implanted Cu or N ions, and to the accelerating voltage. Formation of compound metals on the surfaces of metals by ion-implantation was investigated for the purpose to prevent the corrosion of metals. The resistance of mild steel in which Ni ions were implanted was larger than that of mild steel without any treatment. (Kato, T.)

  8. Critical issues in the formation of quantum computer test structures by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Schenkel, T.; Lo, C. C.; Weis, C. D.; Schuh, A.; Persaud, A.; Bokor, J.

    2009-04-06

    The formation of quantum computer test structures in silicon by ion implantation enables the characterization of spin readout mechanisms with ensembles of dopant atoms and the development of single atom devices. We briefly review recent results in the characterization of spin dependent transport and single ion doping and then discuss the diffusion and segregation behaviour of phosphorus, antimony and bismuth ions from low fluence, low energy implantations as characterized through depth profiling by secondary ion mass spectrometry (SIMS). Both phosphorus and bismuth are found to segregate to the SiO2/Si interface during activation anneals, while antimony diffusion is found to be minimal. An effect of the ion charge state on the range of antimony ions, 121Sb25+, in SiO2/Si is also discussed.

  9. Bone integration capability of nanopolymorphic crystalline hydroxyapatite coated on titanium implants

    Directory of Open Access Journals (Sweden)

    Suzuki T

    2012-02-01

    Full Text Available Masahiro Yamada*, Takeshi Ueno*, Naoki Tsukimura, Takayuki Ikeda, Kaori Nakagawa, Norio Hori, Takeo Suzuki, Takahiro OgawaLaboratory of Bone and Implant Sciences, The Weintraub Center for Reconstructive Biotechnology, Division of Advanced Prosthodontics, Biomaterials and Hospital Dentistry, UCLA School of Dentistry, Los Angeles, CA, USA *These authors contributed equally to this workAbstract: The mechanism by which hydroxyapatite (HA-coated titanium promotes bone–implant integration is largely unknown. Furthermore, refining the fabrication of nanostructured HA to the level applicable to the mass production process for titanium implants is challenging. This study reports successful creation of nanopolymorphic crystalline HA on microroughened titanium surfaces using a combination of flame spray and low-temperature calcination and tests its biological capability to enhance bone–implant integration. Sandblasted microroughened titanium implants and sandblasted + HA-coated titanium implants were subjected to biomechanical and histomorphometric analyses in a rat model. The HA was 55% crystallized and consisted of nanoscale needle-like architectures developed in various diameters, lengths, and orientations, which resulted in a 70% increase in surface area compared to noncoated microroughened surfaces. The HA was free from impurity contaminants, with a calcium/phosphorus ratio of 1.66 being equivalent to that of stoichiometric HA. As compared to microroughened implants, HA-coated implants increased the strength of bone–implant integration consistently at both early and late stages of healing. HA-coated implants showed an increased percentage of bone–implant contact and bone volume within 50 µm proximity of the implant surface, as well as a remarkably reduced percentage of soft tissue intervention between bone and the implant surface. In contrast, bone volume outside the 50 µm border was lower around HA-coated implants. Thus, this study

  10. Effect of phosphorus stress on Microcystis aeruginosa growth and phosphorus uptake.

    Directory of Open Access Journals (Sweden)

    Sajeela Ghaffar

    Full Text Available This study was designed to advance understanding of phosphorus regulation of Microcystis aeruginosa growth, phosphorus uptake and storage in changing phosphorus (P conditions as would occur in lakes. We hypothesized that Microcystis growth and nutrient uptake would fit classic models by Monod, Droop, and Michaelis-Menten in these changing conditions. Microcystis grown in luxury nutrient concentrations was transferred to treatments with phosphorus concentrations ranging from 0-256 μg P∙L-1 and luxury nitrogen. Dissolved phosphorus concentration, cell phosphorus quota, P uptake rate and cell densities were measured at day 3 and 6. Results showed little relationship to predicted models. Microcystis growth was asymptotically related to P treatment from day 0-3, fitting Monod model well, but negatively related to P treatment and cell quota from day 3-6. From day 0-3, cell quota was negatively related to P treatments at <2 μg∙L-1, but increased slightly at higher P. Cell quota decreased greatly in low P treatments from day 3-6, which may have enabled high growths in low P treatments. P uptake was positively and linearly related to P treatment during both periods. Negative uptake rates and increases in measured culture phosphorus concentrations to 5 μg∙L-1 in the lowest P treatments indicated P leaked from cells into culture medium. This leakage during early stages of the experiment may have been sufficient to stimulate metabolism and use of intracellular P stores in low P treatments for rapid growth. Our study shows P regulation of Microcystis growth can be complex as a result of changing P concentrations, and this complexity may be important for modeling Microcystis for nutrient and ecosystem management.

  11. Planar transistors and impatt diodes with ion implantation

    International Nuclear Information System (INIS)

    Dorendorf, H.; Glawischnig, H.; Grasser, L.; Hammerschmitt, J.

    1975-03-01

    Low frequency planar npn and pnp transistors have been developed in which the base and emitter have been fabricated using ion implantation of boron and phosphorus by a drive-in diffusion. Electrical parameters of the transistors are comparable with conventionally produced transistors; the noise figure was improved and production tolerances were significantly reduced. Silicon-impatt diodes for the microwave range were also fabricated with implanted pn junctions and tested for their high frequency characteristics. These diodes, made in an improved upside down technology, delivered output power up to 40 mW (burn out power) at 30 GHz. Reverse leakage current and current carrying capability of these diodes were comparable to diffused structures. (orig.) 891 ORU 892 MB [de

  12. Influence of Palatal Coverage and Implant Distribution on Implant Strain in Maxillary Implant Overdentures.

    Science.gov (United States)

    Takahashi, Toshihito; Gonda, Tomoya; Mizuno, Yoko; Fujinami, Yozo; Maeda, Yoshinobu

    2016-01-01

    Maxillary implant overdentures are often used in clinical practice. However, there is no agreement or established guidelines regarding prosthetic design or optimal implant placement configuration. The purpose of this study was to examine the influence of palatal coverage and implant number and distribution in relation to impact strain under maxillary implant overdentures. A maxillary edentulous model with implants and experimental overdentures with and without palatal coverage was fabricated. Four strain gauges were attached to each implant, and they were positioned in the anterior, premolar, and molar areas. A vertical occlusal load of 98 N was applied through a mandibular complete denture, and the implant strains were compared using one-way analysis of variance (P = .05). The palatolabial strain was much higher on anterior implants than on other implants in both denture types. Although there was no significant difference between the strain under dentures with and without palatal coverage, palateless dentures tended to result in higher implant strain than dentures with palatal coverage. Dentures supported by only two implants registered higher strain than those supported by four or six implants. Implants under palateless dentures registered higher strain than those under dentures with palatal coverage. Anterior implants exhibited higher palatolabial strain than other implants regardless of palatal coverage and implant configuration; it is therefore recommended that maxillary implant overdentures should be supported by six implants with support extending to the distal end of the arch.

  13. Electrical and electron microscopy observations on defects in ion implanted silicon

    International Nuclear Information System (INIS)

    Ling, H.

    1978-01-01

    Silicon single crystals were implanted with 100 keV phosphorus ions to a dose of 2 x 10 16 ions/cm 2 at both room-temperature and 600 0 C. They were isochronally annealed at temperatures ranging from 400 0 C to 900 0 C. Sheet resistivity measurements of the specimens were taken after each anneal, together with corresponding transmission electron micrographs

  14. Performance of fertigation technique for phosphorus application in cotton

    Directory of Open Access Journals (Sweden)

    M. Aslam

    2009-05-01

    Full Text Available Low native soil phosphorus availability coupled with poor utilization of added phosphorus is one of the major constraints limiting the productivity of the crops. With a view of addressing this issue, field studies were conducted to compare the relative efficacy of broadcast and fertigation techniques for phosphorus application during 2005-2006 using cotton as a test crop. Two methods of phosphorus application i.e. broadcast and fertigation were evaluated using five levels of P2O5 (0, 30, 45, 60 and 75 kg P2O5 ha -1. Fertigation showed an edge over broadcast method at all levels of phosphorus application. The highest seed cotton yield was recorded with 75 kg P2O5 ha-1. Fertilizer phosphorus applied at the rate of 60 kg ha-1 through fertigation produced 3.4 tons ha-1 of seed cotton yield, which was statistically identical to 3.3 tons recorded with 75 kg ha-1 of broadcast phosphorus. Agronomic performance of phosphorus was influenced considerably by either method of fertilizer application. The seed cotton yield per kg of fertigation phosphorus was 48% higher than the corresponding broadcast application. The results of these studies showed that fertigation was the most efficient method of phosphorus application compared with the conventional broadcast application of fertilizers.

  15. [Research progress on phosphorus budgets and regulations in reservoirs].

    Science.gov (United States)

    Shen, Xiao; Li, Xu; Zhang, Wang-shou

    2014-12-01

    Phosphorus is an important limiting factor of water eutrophication. A clear understanding of its budget and regulated method is fundamental for reservoir ecological health. In order to pro- mote systematic research further and improve phosphorus regulation system, the budget balance of reservoir phosphorus and its influencing factors were concluded, as well as conventional regulation and control measures. In general, the main phosphorus sources of reservoirs include upstream input, overland runoff, industrial and domestic wastewater, aquaculture, atmospheric deposition and sediment release. Upstream input is the largest phosphorus source among them. The principal output path of phosphorus is the flood discharge, the emission load of which is mainly influenced by drainage patterns. In addition, biological harvest also can export a fraction of phosphorus. There are some factors affecting the reservoir phosphorus balance, including reservoirs' function, hydrological conditions, physical and chemical properties of water, etc. Therefore, the phosphorus budgets of different reservoirs vary greatly, according to different seasons and regions. In order to reduce the phosphorus loading in reservoirs, some methods are carried out, including constructed wetlands, prefix reservoir, sediment dredging, biomanipulation, etc. Different methods need to be chosen and combined according to different reservoirs' characteristics and water quality management goals. Thus, in the future research, it is reasonable to highlight reservoir ecological characteristics and proceed to a complete and systematic analysis of the inherent complexity of phosphorus budget and its impact factors for the reservoirs' management. Besides, the interaction between phosphorus budget and other nutrients in reservoirs also needs to be conducted. It is fundamental to reduce the reservoirs' phosphorus loading to establish a scientific and improved management system based on those researches.

  16. Visualizing alternative phosphorus scenarios for future food security

    Directory of Open Access Journals (Sweden)

    Tina-Simone Neset

    2016-10-01

    Full Text Available The impact of global phosphorus scarcity on food security has increasingly been the focus of scientific studies over the past decade. However, systematic analyses of alternative futures for phosphorus supply and demand throughout the food system are still rare and provide limited inclusion of key stakeholders. Addressing global phosphorus scarcity requires an integrated approach exploring potential demand reduction as well as recycling opportunities. This implies recovering phosphorus from multiple sources, such as food waste, manure and excreta, as well as exploring novel opportunities to reduce the long-term demand for phosphorus in food production such as changing diets. Presently, there is a lack of stakeholder and scientific consensus around priority measures. To therefore enable exploration of multiple pathways and facilitate a stakeholder dialogue on the technical, behavioral and institutional changes required to meet long-term future phosphorus demand, this paper introduces an interactive web-based tool, designed for visualizing global phosphorus scenarios in real-time. The interactive global phosphorus scenario tool builds on several demand and supply side measures that can be selected and manipulated interactively by the user. It provides a platform to facilitate stakeholder dialogue to plan for a soft landing and identify a suite of concrete priority options, such as investing in agricultural phosphorus use efficiency, or renewable fertilizers derived from phosphorus recovered from wastewater and food waste, to determine how phosphorus demand to meet future food security could be attained on a global scale in 2040 and 2070. This paper presents four example scenarios, including (1 the potential of full recovery of human excreta, (2 the challenge of a potential increase in non-food phosphorus demand, (3 the potential of a decreased animal product consumption, and (4 the potential decrease in phosphorus demand from increased efficiency

  17. Visualizing Alternative Phosphorus Scenarios for Future Food Security.

    Science.gov (United States)

    Neset, Tina-Simone; Cordell, Dana; Mohr, Steve; VanRiper, Froggi; White, Stuart

    2016-01-01

    The impact of global phosphorus scarcity on food security has increasingly been the focus of scientific studies over the past decade. However, systematic analyses of alternative futures for phosphorus supply and demand throughout the food system are still rare and provide limited inclusion of key stakeholders. Addressing global phosphorus scarcity requires an integrated approach exploring potential demand reduction as well as recycling opportunities. This implies recovering phosphorus from multiple sources, such as food waste, manure, and excreta, as well as exploring novel opportunities to reduce the long-term demand for phosphorus in food production such as changing diets. Presently, there is a lack of stakeholder and scientific consensus around priority measures. To therefore enable exploration of multiple pathways and facilitate a stakeholder dialog on the technical, behavioral, and institutional changes required to meet long-term future phosphorus demand, this paper introduces an interactive web-based tool, designed for visualizing global phosphorus scenarios in real time. The interactive global phosphorus scenario tool builds on several demand and supply side measures that can be selected and manipulated interactively by the user. It provides a platform to facilitate stakeholder dialog to plan for a soft landing and identify a suite of concrete priority options, such as investing in agricultural phosphorus use efficiency, or renewable fertilizers derived from phosphorus recovered from wastewater and food waste, to determine how phosphorus demand to meet future food security could be attained on a global scale in 2040 and 2070. This paper presents four example scenarios, including (1) the potential of full recovery of human excreta, (2) the challenge of a potential increase in non-food phosphorus demand, (3) the potential of decreased animal product consumption, and (4) the potential decrease in phosphorus demand from increased efficiency and yield gains in

  18. Phosphorus kinetics in ovine fed with different phosphorus sources, using the isotopic dilution technique

    International Nuclear Information System (INIS)

    Vitti, D.M.S.S.; Abdalla, A.L.; Meirelles, C.F.

    1992-01-01

    Phosphorus kinetics in fluids and tissues of sheep was studied. Sixteen castrated sheep were kept in metabolism cages, receiving a semipuried diet containing as phosphorus sources dicalcium phosphate (BIC), monoammonium phosphate (MAP), superphosphate (SPT) and Tapita phosphate (TAP) 200 μCi P-32 was intravenously injected in each sheep and blood and feces were collected for eight days. From the specific activities in feces and plasma the endogenous phosphorus and the absorption coefficient were calculated. plasma P-32 half-life was determined. Nine days after injection the animals were killed and liver, kidney and muscle and bone samples were collected. P-32 retention and specific activities in tissues were determined. Endogenous phosphorus and absorption coefficient values were 54.44 ± 15.31 mh/kg live weight and 0.60; 47.98 ± 12.44 and 0.56; 39.70 ± 7.29 and 0.49; 59.11 ± 17.12 and 0.58 respectively bor BIC, MAP, TAP and SPT. P-32 retention by tissues was 0.29 ± 0.09; 0.27 ± 0.06; 0.16 ± 0.04 and 0.08 ± 0.03 dose/g fresh matter, respectively for bone, liver, kidney and muscle. It was concluded that animals which received TAP showed differences in absorption, distribution and P-32 retention by fluids and tissues. Phosphorus availability was lower for this source. (author)

  19. Surface Morphologies of Ti and Ti-Al-V Bombarded by 1.0-MeV Au+ Ions

    Science.gov (United States)

    Garcia, M. A.; Rickards, J.; Cuerno, R.; Trejo-Luna, R.; Cañetas-Ortega, J.; de la Vega, L. R.; Rodríguez-Fernández, L.

    2017-12-01

    Ion implantation is known to enhance the mechanical properties of biomaterials such as, e.g., the wear resistance of orthopedic joints. Increasing the surface area of implants may likewise improve their integration with, e.g., bone tissue, which requires surface features with sizes in the micron range. Ion implantation of biocompatible metals has recently been demonstrated to induce surface ripples with wavelengths of a few microns. However, the physical mechanisms controlling the formation and characteristics of these patterns are yet to be understood. We bombard Ti and Ti-6Al-4V surfaces with 1.0-MeV Au+ ions. Analysis by scanning electron and atomic force microscopies shows the formation of surface ripples with typical dimensions in the micron range, with potential indeed for biomedical applications. Under the present specific experimental conditions, the ripple properties are seen to strongly depend on the fluence of the implanted ions while being weakly dependent on the target material. Moreover, by examining experiments performed for incidence angle values θ =8 ° , 23°, 49°, and 67°, we confirm the existence of a threshold incidence angle for (ripple) pattern formation. Surface indentation is also used to study surface features under additional values of θ , agreeing with our single-angle experiments. All properties of the surface structuring process are very similar to those found in the production of surface nanopatterns under low-energy ion bombardment of semiconductor targets, in which the stopping power is dominated by nuclear contributions, as in our experiments. We consider a continuum model that combines the effects of various physical processes as originally developed in that context, with parameters that we estimate under a binary-collision approximation. Notably, reasonable agreement with our experimental observations is achieved, even under our high-energy conditions. Accordingly, in our system, ripple formation is determined by mass

  20. Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization

    Science.gov (United States)

    Erich, M.; Kokkoris, M.; Fazinić, S.; Petrović, S.

    2018-02-01

    This work reports on the induced diamond crystal amorphization by 4 MeV carbon ions implanted in the 〈1 0 0〉 oriented crystal and its determination by application of RBS/C and EBS/C techniques. The spectra from the implanted samples were recorded for 1.2, 1.5, 1.75 and 1.9 MeV protons. For the two latter ones the strong resonance of the nuclear elastic scattering 12C(p,p0)12C at 1.737 MeV was explored. The backscattering channeling spectra were successfully fitted and the ion beam induced crystal amorphization depth profile was determined using a phenomenological approach, which is based on the properly defined Gompertz type dechanneling functions for protons in the 〈1 0 0〉 diamond crystal channels and the introduction of the concept of ion beam amorphization, which is implemented through our newly developed computer code CSIM.

  1. Lamb shift measurement in hydrogenlike phosphorus

    International Nuclear Information System (INIS)

    Mueller, D.; Gassen, J.; Kremer, L.

    1988-01-01

    In hydrogenlike phosphorus ions the 2S 1/2 -2P 1/2 energy splitting (Lamb shift) has been found to be E exp (LS)=0.08343(29) eV using laser spectroscopy. This result is to be compared with the most recent theoretical value E th (LS)=0.08376(4) eV by Mohr and Johnson and Soff

  2. Phosphorus introduction mechanism in electrodeposited cobalt films

    International Nuclear Information System (INIS)

    Kravtchenko, Jean-Francois

    1973-01-01

    The cathodic reduction of hypophosphite, phosphite and phosphate ions was studied using chrono-potentiometry and voltammetry. Then cobalt was deposited at constant current from a bath containing one of these three compounds. The current, while giving an electrodeposition of cobalt, also enhances at the same time a chemical deposition of cobalt. It is shown that high coercive forces in cobalt films are much more related to this chemical deposition than to the simple fact that the films contain some phosphorus. (author) [fr

  3. Implants for orthodontic anchorage

    Science.gov (United States)

    Zheng, Xiaowen; Sun, Yannan; Zhang, Yimei; Cai, Ting; Sun, Feng; Lin, Jiuxiang

    2018-01-01

    Abstract Implantanchorage continues to receive much attention as an important orthodontic anchorage. Since the development of orthodontic implants, the scope of applications has continued to increase. Although multiple reviews detailing implants have been published, no comprehensive evaluations have been performed. Thus, the purpose of this study was to comprehensively evaluate the effects of implants based on data published in review articles. An electronic search of the Cochrane Library, Medline, Embase, Ebsco and Sicencedirect for reviews with “orthodontic” and “systematic review or meta analysis” in the title, abstract, keywords, or full text was performed. A subsequent manual search was then performed to identify reviews concerning orthodontic implants. A manual search of the orthodontic journals American Journal of Orthodontics and Dentofacial Orthopedics (AJODO), European Journal of Orthodontics (EJO), and Angle Othodontist was also performed. Such systematic reviews that evaluated the efficacy and safety of orthodontic implants were used to indicate success rates and molar movements. A total of 23 reviews were included in the analysis. The quality of each review was assessed using a measurement tool for Assessment of Multiple Systematic Reviews (AMSTAR), and the review chosen to summarize outcomes had a quality score of >6. Most reviews were less than moderate quality. Success rates of implants ranged in a broad scope, and movement of the maxillary first molar was superior with implants compared with traditional anchorage. PMID:29595673

  4. Maintenance in dental implants

    Directory of Open Access Journals (Sweden)

    Giselle Póvoa Gomes

    2008-01-01

    Full Text Available In implants, maintenance is a decisive factor for obtaining success when implant supported overdentures and dentures are used. The present stud presents, a clinical case of a patient, a 70 year-old white man, with a completely edentulous mandibular alveolar ridge, severe bone resorption with presence of basal bone only, and absence of vestibule. Initially, treatment consisted of the placement of a mandibular overdenture, supported on three implants in the anterior inter-foramen region, as the left implant was transfixed in the basal bone of 2 to 3 millimeters. Eleven years later, another two implants were placed in the anterior area and an immediate load was performed up to the first molars, for the placement of an implant supported fixed. Throughout the entire treatment, meticulous maintenance was carried out, with follow-up for fourteen years, interrupted by the patient’s death. From the third month after the opening the three implants initially placed, the presence of keratinized mucosa, definition of the vestibule, maturation of the alveolar ridge and bone formation in the mento region were observed. It was concluded that good planning, allied to mastery of the technique and adequate maintenance were the prerequisites necessary for obtaining favorable results, success of the present case, and for the patient to have a better quality of life.

  5. MeV Mott polarimetry at Jefferson Lab

    International Nuclear Information System (INIS)

    Steigerwald, M.

    2001-01-01

    In the recent past, Mott polarimetry has been employed only at low electron beam energies (≅100 keV). Shortly after J. Sromicki demonstrated the first Mott scattering experiment on lead foils at 14 MeV (MAMI, 1994), a high energy Mott scattering polarimeter was developed at Thomas Jefferson National Accelerator Facility (5 MeV, 1995). An instrumental precision of 0.5% was achieved due to dramatic improvement in eliminating the background signal by means of collimation, shielding, time of flight and coincidence methods. Measurements for gold targets between 0.05 μm and 5 μm for electron energies between 2 and 8 MeV are presented. A model was developed to explain the depolarization effects in the target foils due to double scattering. The instrumental helicity correlated asymmetries were measured to smaller than 0.1%

  6. A 30 MeV H- cyclotron for isotope production

    International Nuclear Information System (INIS)

    Baartman, R.; Kleevan, W.J.; Laxdal, R.E.; Milton, B.F.; Otter, A.J.; Pearson, J.B.; Poirier, R.L.; Schmor, P.W.; Schneider, H.R.; Erdman, K.L.; Walker, Q.

    1989-01-01

    Because of an expanding market for radioisotopes there is a need for a new generation of cyclotrons designed specifically for this purpose. We describe such a cyclotron currently under construction. It is a 30 MeV H - design that exploits a newly developed high brightness multicusp ion source which is capable of H - currents of up to 5 mA. This together with careful beam matching then makes feasible accelerated H - beam intensities of 500 μA. The cyclotron being built is a four sector radial ridge design with two 45 degree dees in opposite valleys. Beam extraction is by stripping to H + in a thin graphite foil. Two extraction probes will allow simultaneous extraction of two beams, each with an intensity of up to 200 μA. Energy variation from 15 MeV to 30 MeV is achieved by varying the radial position of the extraction foil. 7 refs., 4 figs., 1 tab

  7. Investigation of transversal nuclear excitation in 208Pb at excitation energies between 6 MeV and 8 MeV using inelastic electron scattering

    International Nuclear Information System (INIS)

    Frey, R.W.

    1978-01-01

    Using high resolution inelastic electron scattering magnitic dipole and quadrupole excitations in 208 Pb were investigated in the energy range between 6 MeV and 8 MeV. The electron energy was 50 MeV and 63.5 MeV. With a mean absolute energy resolution of 33 kev. 44 excited states were found in the above energy range. The measured angular distributions were compared with DWBA-calculations using random phase approximated wave functions. (FKS)

  8. Flow analysis techniques for phosphorus: an overview.

    Science.gov (United States)

    Estela, José Manuel; Cerdà, Víctor

    2005-04-15

    A bibliographical review on the implementation and the results obtained in the use of different flow analytical techniques for the determination of phosphorus is carried out. The sources, occurrence and importance of phosphorus together with several aspects regarding the analysis and terminology used in the determination of this element are briefly described. A classification as well as a brief description of the basis, advantages and disadvantages of the different existing flow techniques, namely; segmented flow analysis (SFA), flow injection analysis (FIA), sequential injection analysis (SIA), all injection analysis (AIA), batch injection analysis (BIA), multicommutated FIA (MCFIA), multisyringe FIA (MSFIA) and multipumped FIA (MPFIA) is also carried out. The most relevant manuscripts regarding the analysis of phosphorus by means of flow techniques are herein classified according to the detection instrumental technique used with the aim to facilitate their study and obtain an overall scope. Finally, the analytical characteristics of numerous flow-methods reported in the literature are provided in the form of a table and their applicability to samples with different matrixes, namely water samples (marine, river, estuarine, waste, industrial, drinking, etc.), soils leachates, plant leaves, toothpaste, detergents, foodstuffs (wine, orange juice, milk), biological samples, sugars, fertilizer, hydroponic solutions, soils extracts and cyanobacterial biofilms are tabulated.

  9. Nanotechnology for dental implants.

    Science.gov (United States)

    Tomsia, Antoni P; Lee, Janice S; Wegst, Ulrike G K; Saiz, Eduardo

    2013-01-01

    With the advent of nanotechnology, an opportunity exists for the engineering of new dental implant materials. Metallic dental implants have been successfully used for decades, but they have shortcomings related to osseointegration and mechanical properties that do not match those of bone. Absent the development of an entirely new class of materials, faster osseointegration of currently available dental implants can be accomplished by various surface modifications. To date, there is no consensus regarding the preferred method(s) of implant surface modification, and further development will be required before the ideal implant surface can be created, let alone become available for clinical use. Current approaches can generally be categorized into three areas: ceramic coatings, surface functionalization, and patterning on the micro- to nanoscale. The distinctions among these are imprecise, as some or all of these approaches can be combined to improve in vivo implant performance. These surface improvements have resulted in durable implants with a high percentage of success and long-term function. Nanotechnology has provided another set of opportunities for the manipulation of implant surfaces in its capacity to mimic the surface topography formed by extracellular matrix components of natural tissue. The possibilities introduced by nanotechnology now permit the tailoring of implant chemistry and structure with an unprecedented degree of control. For the first time, tools are available that can be used to manipulate the physicochemical environment and monitor key cellular events at the molecular level. These new tools and capabilities will result in faster bone formation, reduced healing time, and rapid recovery to function.

  10. Effect of High-Temperature Annealing on Ion-Implanted Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Hyunpil Boo

    2012-01-01

    Full Text Available P-type and n-type wafers were implanted with phosphorus and boron, respectively, for emitter formation and were annealed subsequently at 950∼1050∘C for 30∼90 min for activation. Boron emitters were activated at 1000∘C or higher, while phosphorus emitters were activated at 950∘C. QSSPC measurements show that the implied Voc of boron emitters increases about 15 mV and the J01 decreases by deep junction annealing even after the activation due to the reduced recombination in the emitter. However, for phosphorus emitters the implied Voc decreases from 622 mV to 560 mV and the J01 increases with deep junction annealing. This is due to the abrupt decrease in the bulk lifetime of the p-type wafer itself from 178 μs to 14 μs. PC1D simulation based on these results shows that, for p-type implanted solar cells, increasing the annealing temperature and time abruptly decreases the efficiency (Δηabs=−1.3%, while, for n-type implanted solar cells, deep junction annealing increases the efficiency and Voc, especially (Δηabs=+0.4% for backside emitter solar cells.

  11. Conversion efficiency of lead for 30-200 MeV photons

    International Nuclear Information System (INIS)

    Darriulat, P.; Gygi, E.; Holder, M.; McDonald, K.T.; Pugh, H.G.; Schneider, F.; Tittel, K.

    1975-01-01

    The conversion efficiency of lead has been measured as a function of thickness for 44 MeV, 94 MeV and 177 MeV photons, and as a function of energy between 29 MeV and 177 Mev for thickness of one and two radiation lengths. Some additional information on multiplicity of secondary tracks and on their angular distribution was obtained using a small streamer chamber. The results obtained confirm the shower calculations of Messel and Crawford. (Auth.)

  12. The JHP 200-MeV proton linear accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Kato, Takao [National Lab. for High Energy Physics, Tsukuba, Ibaraki (Japan)

    1997-11-01

    A 200-MeV proton linear accelerator for the Japanese Hadron Project (JHP) has been designed. It consists of a 3-MeV radio-frequency quadrupole linac (RFQ), a 50-MeV drift tube linac (DTL) and a 200-MeV separated-type drift tube linac (SDTL). A frequency of 324 MHz has been chosen for all of the rf structures. A peak current of 30 mA (H{sup -} ions) of 400 {mu}sec pulse duration will be accelerated at a repetition rate of 25 Hz. A future upgrade plan up to 400 MeV is also presented, in which annular-coupled structures (ACS) of 972 MHz are used in an energy range of above 150 or 200 MeV. One of the design features is its high performance for a beam-loss problem during acceleration. It can be achieved by separating the transition point in the transverse motion from that of the longitudinal motion. The transverse transition at a rather low-energy range decreases the effects of space-charge, while the longitudinal transition at a rather high-energy range decreases the effects of nonlinear problems related to acceleration in the ACS. Coupled envelope equations and equipartitioning theory are used for the focusing design. The adoption of the SDTL structure improves both the effective shunt impedance and difficulties in fabricating drift tubes with focusing magnets. An accurate beam-simulation code on a parallel supercomputer was used for confirming any beam-loss problem during acceleration. (author)

  13. Production of radionuclides by 14 MeV neutron generator

    International Nuclear Information System (INIS)

    Alfassi, Z.B.

    1983-01-01

    Due to the short half-lives of these nuclides they have to be produced in situ or at least not far from the place of use. The cost of 14 MeV neutron generators have been compared with the typical middle-sized cyclotrons and it was found that the capital costs are much lower in the case of neutron generators. This is the main reason for the availability of 14 MeV neutron generators in many scientific institutes compared to the scarcity of cyclotrons. Lately, the use of 14 MeV neutrons for cancer therapy was studied in several medical centers. A number of hospitals and cancer research centers have high intensity 14 MeV neutron generators for this purpose. The advantages of using short-lived in-house produced radionuclides suggest the use of the available 14 MeV neutron generators for biological studies and in medical diagnosis. 14 MeV neutron generators can be used to produce some of the medically useful radionuclides, such as /sup 18/F, /sup 80/Br, /sup 199m/Hg, and others. However, the amount required for medicine can only be prepared by the new high intensity neutron generators, used for neutron therapy and not by the smaller ones, commonly used in university laboratories (--10/sup 11/ n/sec). On the other hand, these relatively small neutron generators can be used for the preparation of radionuclides for biological studies. They facilitate the study of metabolism of elements for which radionuclides cannot be usually purchased due to short half-lives or the high price of the long-lived ones, such as /sup 34m/Cl, /sup 18/F, /sup 28,29/Al, /sup 27/Mg, and others. An example is the work done on the fate of Al and Mg in rats using /sup 28/Al and /sup 27/Mg./sup 13/

  14. Ion implantation for microelectronics

    International Nuclear Information System (INIS)

    Dearnaley, G.

    1977-01-01

    Ion implantation has proved to be a versatile and efficient means of producing microelectronic devices. This review summarizes the relevant physics and technology and assesses the advantages of the method. Examples are then given of widely different device structures which have been made by ion implantation. While most of the industrial application has been in silicon, good progress continues to be made in the more difficult field of compound semiconductors. Equipment designed for the industrial ion implantation of microelectronic devices is discussed briefly. (Auth.)

  15. Optimization of dental implantation

    Science.gov (United States)

    Dol, Aleksandr V.; Ivanov, Dmitriy V.

    2017-02-01

    Modern dentistry can not exist without dental implantation. This work is devoted to study of the "bone-implant" system and to optimization of dental prostheses installation. Modern non-invasive methods such as MRI an 3D-scanning as well as numerical calculations and 3D-prototyping allow to optimize all of stages of dental prosthetics. An integrated approach to the planning of implant surgery can significantly reduce the risk of complications in the first few days after treatment, and throughout the period of operation of the prosthesis.

  16. Total phosphorus, phytate phosphorus contents and the correlation of phytates with amylose in selected edible beans in Sri Lanka

    Directory of Open Access Journals (Sweden)

    Keerthana Sivakumaran

    2018-02-01

    Full Text Available Phytate a major anti nutritional factors in legumes and it accounts for larger portion of the total phosphorus, while limiting the bioavailablity of certain divalent cations to the human body. Legumes of eleven varieties cultivated in Sri Lanka, Mung bean (MI5, MI6, Cowpea (Waruni, MICP1, Bombay, Dhawala, ANKCP1, Soybean (MISB1, Pb1 and Horse gram (ANKBlack, ANKBrown were analyzed for phosphorus content and phytate content. Total phosphorus content was quantified by dry ashing followed by spectrophotometrical measurement of the blue colour intensity of acid soluble phosphate with sodium molybdate in the presence of ascorbic acid while phytate phosphorus using anion exchange chromatographic technique followed by spectrometrical measurement of the digested organic phosphorus and amylose content by Simple Iodine-Colourimetric method. Where the least value for phosphorus was observed 275.04 ±1.44 mg.100g-1 in ANKBlack (Horse gram and the highest in MISB1 (Soyabean with 654.94 ±0.05 mg.100g-1. The phytate phosphorus content (which is a ratio of phyate to total phosphorus was highest in Dhawala (Cowpea. The phytate phosphorus (which is a ratio of phyate to total phosphorus was highest in Dhawala with 67.42% and least in Bombay (Cowpea with 24.87%. The amylose content of the legumes was least in Pb1 with 8.71 ±0.13 mg.100mg-1 and the highest in MI6 22.58 ±0.71 mg.100mg-1. The correlation between phyate and total phosphorus was significant (p <0.05 and positive (r = 0.62. Similarly the correlation coefficient for phytate phosphorus and total phosphorus was significant (p <0.05 and positive (r = 0.63. Amylose content of legumes was significantly correlated negatively (p <0.05 with the total phytates content (r = -0.82.

  17. Crosslinking of commercial polyethylenes by 10 MeV electrons

    International Nuclear Information System (INIS)

    Singh, A.; Lopata, V.J.; Kremers, W.; Sze, Yu-keung

    1995-08-01

    Commercial polyethylenes were irradiated with 10 MeV electrons to induce crosslinking. The gel fraction data measured as a function of total dose suggests that crosslinking proceeds on irradiation, as expected. A number of the properties of the irradiated polyethylenes, such as the degree of oxidation, crystallinity and thermal degradation, were studied by Fourier transform infrared/photo acoustic spectroscopy, X-ray diffraction, and a pyrolysis technique coupled with gas chromatography and mass spectrometry. The results of this study suggest that commercial polyethylenes can be crosslinked to a gel fraction of ∼70%, required for wire and cable applications, by 10 MeV electrons. (author). 35 refs., 6 figs

  18. A P + DEUTERON PROTON POLARIMETER AT 200 MEV.

    Energy Technology Data Exchange (ETDEWEB)

    HUANG,H.; ROSER,T.; ZELENSKI,A.; KURITA,K.; STEPHENSON,E.; TOOLE,R.

    2002-06-02

    There has been concern about the analyzing power of the p-Carbon polarimeter at the end of 200 MeV LINAC of BNL. A new polarimeter based on proton-deuteron scattering was installed and we have repeated the calibration of proton-Carbon scattering at 12 degrees and 200 MeV against proton-deuteron scattering. The result is consistent with the value of A=0.62 now used to measure the beam polarization at the end of the LINAC.

  19. Radiation induced phosphorus segregation in austenitic and ferritic alloys

    International Nuclear Information System (INIS)

    Brimhall, J.L.; Baer, D.R.; Jones, R.H.

    1984-01-01

    The radiation induced surface segregation (RIS) of phosphorus in stainless steel attained a maximum at a dose of 0.8 dpa then decreased continually with dose. This decrease in the surface segregation of phosphorus at high dose levels has been attributed to removal of the phosphorus layer by ion sputtering. Phosphorus is not replenished since essentially all of the phosphorus within the irradiation zone has been segregated to the surface. Sputter removal can explain the previously reported absence of phosphorus segregation in ferritic alloys irradiated at high dosessup(1,2) (>1 dpa) since irradiation of ferritic alloys to low doses has shown measurable RIS. This sputtering phenomenon places an inherent limitation to the heavy ion irradiation technique for the study of surface segregation of impurity elements. The magnitude of the segregation in ferritics is still much less than in stainless steel which can be related to the low damage accumulation in these alloys. (orig.)

  20. Isotopic techniques to study phosphorus cycling in soils

    International Nuclear Information System (INIS)

    Manjaiah, K.M.; Sreenivasa Chari, M.; Sachdev, P.; Sachdev, M.S.

    2008-01-01

    A sound understanding of phosphorus cycling in soil system is essential in order to manage this system in a sustainable manner. Phosphorus transformations are characterized by physico-chemical (sorption-desorption) and biological processes . The transformation rates need to be taken into account while developing nutrient management strategies for economical and sustainable production. One of the important tools and the method gaining popularity for determining the gross transformation rates of nutrients in the soil is the isotopic dilution technique. The major processes in the soil-plant system which determine the distribution and bioavailability of phosphorus in various inorganic and organic soil components consist of: (1) the dissolution of soil mineral phosphates, (2) retention of phosphorus by inorganic soil constituents, (3) decomposition of organic phosphorus contained in plant, animal and microbial detritus and (4) Immobilization of phosphorus via the soil microbial biomass and plan uptake

  1. Microstructural change of Al on H implantation

    Energy Technology Data Exchange (ETDEWEB)

    Kamada, K; Sagara, A; Kinoshita, H; Takahashi, H

    1987-01-01

    Modifications to the subsurface layer of Al on 25 keV H/sub 2//sup +/ ion implantation to fluences of 4 x 10/sup 17/ to 2 x 10/sup 18/ H/sup +//cm/sup 2/ at room temperature were investigated by transmission electron microscopy (TEM) and elastic recoil detection (ERD) with 1.5 MeV He/sup +/. Numerous bubbles ranging in diameter from 50 to 1000 A were observed with a sharp peak at 120 A irrespective of the ion fluence. Stereomicroscopic observations revealed the depth distribution of the bubbles. At fluences greater than 6 x 10/sup 17/ H/sup +//cm/sup 2/, a lateral layer of lower density compared with matrix was observed and named ''Swiss cheese structure'' since its estimated structure is similar to Emmental cheese containing many holes. This Swiss cheese structure causes the formation of new layers on a free surface, and plays a precursor role for blistering. Hhydrogen depth profiling with ERD was performed on every specimen revealing the collapse of the implanted hydrogen profile due to the formation of the Swiss cheese structure.

  2. Quantum effects in ion implanted devices

    International Nuclear Information System (INIS)

    Jamieson, D.N.; Chan, V.; Hudson, F.E.; Andresen, S.E.; Yang, C.; Hopf, T.; Hearne, S.M.; Pakes, C.I.; Prawer, S.; Gauja, E.; Dzurak, A.S.; Clark, R.G.

    2006-01-01

    Fabrication of nanoscale devices that exploit the rules of quantum mechanics to process information presents formidable technical challenges because of the need to control quantum states at the level of individual atoms, electrons or photons. We have used ion implantation to fabricate devices on the scale of 10 nm that have allowed the development and test of nanocircuitry for the control of charge transport at the level of single electrons. This fabrication method is compatible with the construction of devices that employ counted P dopants in Si by employing the technique of ion beam induced charge (IBIC) in which single 14 keV P ions can be implanted into ultra-pure silicon substrates by monitoring on-substrate detector electrodes. We have used IBIC with a MeV nuclear microprobe to map and measure the charge collection efficiency in the development of the electrode structure and show that 100% charge collection efficiency can be achieved. Prototype devices fabricated by this method have been used to investigate quantum effects in the control and transport of single electrons with potential applications to solid state quantum information processing devices

  3. Nickel silicide formation in silicon implanted nickel

    Science.gov (United States)

    Rao, Z.; Williams, J. S.; Pogany, A. P.; Sood, D. K.; Collins, G. A.

    1995-04-01

    Nickel silicide formation during the annealing of very high dose (≥4.5×1017 ions/cm2) Si implanted Ni has been investigated, using ion beam analytical techniques, electron microscopy, and x-ray diffraction analysis. An initial amorphous Si-Ni alloy, formed as a result of high dose ion implantation, first crystallized to Ni2Si upon annealing in the temperature region of 200-300 °C. This was followed by the formation of Ni5Si2 in the temperature region of 300-400 °C and then by Ni3Si at 400-600 °C. The Ni3Si layer was found to have an epitaxial relationship with the substrate Ni, which was determined as Ni3Si∥Ni and Ni3Si∥Ni for Ni(100) samples. The minimum channeling yield in the 2 MeV He Rutherford backscattering and channeling spectra of this epitaxial layer improved with higher annealing temperatures up to 600 °C, and reached a best value measured at about 8%. However, the epitaxial Ni3Si dissolved after long time annealing at 600 °C or annealing at higher temperatures to liberate soluble Si into the Ni substrate. The epitaxy is attributed to the excellent lattice match between the Ni3Si and the Ni. The annealing behavior follows the predictions of the Ni-Si phase diagram for this nickel-rich binary system.

  4. Diffusion and solubility of Au implanted into the AZ1350 photoresist

    International Nuclear Information System (INIS)

    Soares, M.R.F.; Kaschny, J.R.A.; Santos, J.H.R. dos; Amaral, L.; Behar, M.; Fink, D.

    2000-01-01

    In the present paper we report diffusion and solubility results for Au into the photoresist AZ1350. Au was implanted into AZ1350 films at very low energy (E=20 keV) and fluences (PHI=10 12 and 5x10 12 Au/cm 2 ). In this way the radiation damage introduced by the implantation process was minimized and cluster formation was avoided. Annealing was performed in the 150-300 deg. C temperature range and the as implanted and thermal treated samples were analyzed using the Rutherford backscattering (RBS) technique. For the lowest implantation fluence the results have shown a regular atomic diffusion process characterized by an activation energy of E a =640 meV. Instead, for PHI=5x10 12 Au/cm 2 the diffusional mechanism has revealed the effects of the radiation damage. In addition solubility measurements indicate that the solubility limit at 250 deg. C is of the order 0.3 at.%

  5. Effect of helium implantation on mechanical properties of EUROFER97 evaluated by nanoindentation

    International Nuclear Information System (INIS)

    Roldán, M.; Fernández, P.; Rams, J.; Jiménez-Rey, D.; Ortiz, C.J.; Vila, R.

    2014-01-01

    Helium effects on EUROFER97 mechanical properties were studied by means of nanoindentation. The steel was implanted with He ions in a stair-like profile configuration using energies from 2 to 15 MeV at room temperature. Firstly, a deep nanoindentation study was carried out on as-received state (normalized + tempered) in order to obtain a reliable properties database at the nanometric scale, including aspects such as indentation size effect. The nanoindentation hardness of tests on He implanted samples showed a hardness increase depending on the He concentration. The hardness increase follows the He implantation concentration profile with a good accuracy according to BCA calculations using MARLOWE code, considering the whole volume affected by the nanoindentation tests. The results obtained in this work shown that nanoindentation technique permits to assess any change of hardness properties due to ion implantation

  6. Annealing Behavior of Al-Implantation-Induced Disorder in 4H-SiC

    International Nuclear Information System (INIS)

    Zhang, Yanwen; Weber, William J.; Jiang, Weilin; Shutthanandan, V.; Thevuthasan, Suntharampillai; Janson, Martin; Hallen, Anders

    2004-01-01

    Single crystal 4H-SiC films were implanted at 150 K with 1.1 MeV Al 2 2+ and subsequently annealed at elevated temperatures. Rutherford backscattering spectrometry (RBS) results indicate that the relative Si disorder at the damage peak recovers significantly as the annealing temperature increases. However, the residual Si disorder is more resistant to high-temperature annealing in the region of the implanted Al. The maximum concentration of Al profile measured by secondary ion mass spectroscopy (SIMS) is a factor of 1000 lower than the level of the residual Si disorder at the same region. Analysis of these results indicates that the excess residual Si disorder around the implanted Al projected range cannot be accounted for by just the Al interstitials; instead, it appears that each implanted Al stabilizes or inhibits recovery for an equivalent of a few hundred Si interstitials under the current experimental conditions

  7. High-temperature Au implantation into Ni-Be and Ni-Si alloys

    Science.gov (United States)

    James, M. R.; Lam, N. Q.; Rehn, L. E.; Baldo, P. M.; Funk, L.; Stubbins, J. F.

    1992-12-01

    Effects of implantation temperature and target composition on depth distribution of implanted species were investigated. Au+ ions were implanted at 300 keV into polycrystalline Ni-Be and Ni-Si alloys between 25 and 700C to a dose of 10(exp 16) cm(exp -2). Depth distributions of Au were analyzed with RBS using He+ at both 1.7 and 3.0 MeV, and those of the other alloying elements by SIMS. Theoretical modeling of compositional redistribution during implantation at elevated temperatures was also carried out with the aid of a comprehensive kinetic model. The analysis indicated that below approximately 250C, the primary controlling processes were preferential sputtering and displacement mixing, while between 250 and 600C radiation-induced segregation was dominant. Above 600C, thermal-diffusion effects were most important. Fitting of model calculations to experimental measurements provided values for various defect migration and formation parameters.

  8. Metabolism of nonparticulate phosphorus in an acid bog lake

    International Nuclear Information System (INIS)

    Koenings, J.P.

    1977-01-01

    In North Gate Lake, an acid bog lake located on the northern Michigan-Wisconsin border, U.S.A., the algal nutrient inorganic phosphate (FRP) is not detectable by chemical means. Organic phosphorus (FUP) represents 100% of the detectable filterable phosphorus. The availability and cycling of this organic fraction are of considerable interest in regard to the primary productivity of this system. To clarify these relationships, the cycling of nonparticulate forms of phosphorus found in the epilimnion of this lake was studied

  9. Metabolism of nonparticulate phosphorus in an acid bog lake

    Energy Technology Data Exchange (ETDEWEB)

    Koenings, J. P.

    1977-01-01

    In North Gate Lake, an acid bog lake located on the northern Michigan-Wisconsin border, U.S.A., the algal nutrient inorganic phosphate (FRP) is not detectable by chemical means. Organic phosphorus (FUP) represents 100% of the detectable filterable phosphorus. The availability and cycling of this organic fraction are of considerable interest in regard to the primary productivity of this system. To clarify these relationships, the cycling of nonparticulate forms of phosphorus found in the epilimnion of this lake was studied.

  10. Availability for plants of phosphorus in some virgin peat samples

    Directory of Open Access Journals (Sweden)

    Armi Kaila

    1958-01-01

    Full Text Available The availability to plants of native peat phosphorus was studied by chemical methods and by a pot experiment in which three successive oat crops were grown with peat as the only source of phosphorus. The eight samples were collected from virgin peat lands. They were air-dried and ground. The samples were found to represent three different types of phosphorus condition: the first group contained relatively high amounts of inorganic phosphorus which was fairly easily available; the second group had a very high capacity to fix phosphorus which made its high quantity of inorganic phosphorus difficultly available; the third group was very poor in total and inorganic phosphorus but the latter was easily soluble and available to plants. On the basis of the capacity and intensity factors determined according to the method by Teräsvuori and also on the basis of inorganic phosphorus extractable by water fairly reliable predictions could be made of the mutual order of the samples as phosphorus supplyer to the plants in the pot experiment. In an incubation experiment at 27°C the amounts of organic phosphorus mineralized during the period of four months were in some of the samples quite marked, even 40 mg/l, and in most of the samples they corresponded to 5 to 15 per cent of the organic phosphorus. The amounts of phosphorus taken up by the oat crops under the favourable conditions of the pot experiment varied from 11 to 60 mg/l or from 20 to 120 kg/ha.

  11. Effect of supplemented fungal phytase on performance and phosphorus availability by phosphorus-depleted juvenile rainbow trout (Oncorhynchus mykiss), and on the magnitude and composition of phosphorus waste output

    DEFF Research Database (Denmark)

    Dalsgaard, Anne Johanne Tang; Schøn Ekmann, K.; Pedersen, Per Bovbjerg

    2009-01-01

    The effect of a supplemental fungal phytase on performance and phosphorus availability by juvenile rainbow trout fed diets with a high inclusion of plant based protein and on the magnitude and composition of the waste phosphorus production was tested in a 2 × 3 factorial design at a temperature....../suspended phosphorus waste output from fish fed the phytase supplemented diet containing 0.71% available phosphorus, suggesting that the phosphorus requirement was reached at this phosphorus level. Consistent with this, there was a substantial increase in the dissolved/suspended phosphorus waste output from fish fed...... the phytase supplemented diet containing 0.81% available phosphorus, suggesting that the phosphorus requirement was exceeded in this group. This study demonstrated that phytase supplementation will be advantageous to the fish and the environment if supplemented to low-phosphorus diets containing a large share...

  12. Breast Reconstruction with Implants

    Science.gov (United States)

    ... your surgical options and discuss the advantages and disadvantages of implant-based reconstruction, and may show you ... Policy Notice of Privacy Practices Notice of Nondiscrimination Advertising Mayo Clinic is a not-for-profit organization ...

  13. Ion Implantation of Polymers

    DEFF Research Database (Denmark)

    Popok, Vladimir

    2012-01-01

    The current paper presents a state-of-the-art review in the field of ion implantation of polymers. Numerous published studies of polymers modified by ion beams are analysed. General aspects of ion stopping, latent track formation and changes of structure and composition of organic materials...... are discussed. Related to that, the effects of radiothermolysis, degassing and carbonisation are considered. Specificity of depth distributions of implanted into polymers impurities is analysed and the case of high-fluence implantation is emphasised. Within rather broad topic of ion bombardment, the focus...... is put on the low-energy implantation of metal ions causing the nucleation and growth of nanoparticles in the shallow polymer layers. Electrical, optical and magnetic properties of metal/polymer composites are under the discussion and the approaches towards practical applications are overviewed....

  14. Precipitation processes in implanted materials

    International Nuclear Information System (INIS)

    Borders, J.A.

    1978-01-01

    Ion implantation is a nonequilibrium process. It is possible to implant materials with impurities to concentration levels which exceed the solid solubilities. The return of the system to thermodynamic equilibrium is often accomplished by precipitation of the implanted species or a compound involving atoms of both the host and the implanted species. This may involve long time scales when taking place at room temperature or it may take place during the implantation

  15. Secondary toxicity in raptors caused by white phosphorus

    Science.gov (United States)

    Sparling, D.W.

    1995-01-01

    White phosphorus (WP) has caused waterfowl die-offs in a tidal saltmarsh used by the U.S. Army for artillery practice for > 40 years. Bald (Haliaeetus leucocephalus)and golden (Aquila chrysaetos) eagles have been observed feeding on dead and dying waterfowl on the marsh and may be exposed to WP through ingestion of contaminated birds. One carcass of each eagle species has been found with measurable levels of WP in fat. To determine if raptors can become intoxicated by ingesting prey that have been exposed to WP we fed live, 10-day-old white leghorn chicks three sublethal doses of WP. Six hrs after the last dose we euthanized the chicks and separated them into two groups--one with the digestive system from gizzard anteriorly removed (NoGut) and one with the digestive system intact and a 1.1 mg pellet of WP implanted deep into the crop (Pel). A third group of same-aged chicks unexposed to WP was used for controls. Fifteen kestrels (Fa/co sparverius) were randomly assigned to each of the treatments and 10 to the control diet. By 7 d of the study 8 of the kestrels had died on the Pel and 3 on the NoGut diet. Survivors on the Pel diet had significantly lower hematocrit, hemoglobin, final body weights and greater liver/body weight ratios and weight loss than control birds. The study showed that raptors and possibly other predators are at risk both when consuming flesh of prey that have succumbed to WP poisoning and when ingesting WP pellets that are incorporated in body parts but that the risk is greater when pellets are present.

  16. Secondary toxicity in raptors caused by white phosphorus

    Energy Technology Data Exchange (ETDEWEB)

    Sparling, D.W. [Patuxent Environmental Science Center, Laurel, MD (United States)

    1995-12-31

    White phosphorus (WP) has caused waterfowl die-offs in a tidal saltmarsh used by the US Army for artillery practice for > 40 years. Bald (Haliaeetus leucocephalus)and golden (Aquila chrysaetos) eagles have been observed feeding on dead and dying waterfowl on the marsh and may be exposed to WP through ingestion of contaminated birds. One carcass of each eagle species has been found with measurable levels of WP in fat. To determine if raptors can become intoxicated by ingesting prey that have been exposed to WP the authors fed live, 10-day-old white leghorn chicks three sublethal doses of WP. Six hrs after the last dose the authors euthanized the chicks and separated them into two groups one with the digestive system from gizzard anteriorly removed (NoGut) and one with the digestive system intact and a 1.1 mg pellet of WP implanted deep into the crop (Pel). A third group of same-aged chicks unexposed to WP was used for controls. Fifteen kestrels (Falco sparverius) were randomly assigned to each of the treatments and 1 0 to the control diet. By 7 d of the study 8 of the kestrels had died on the Pel and 3 on the NoGut diet. Survivors on the Pel diet had significantly lower hematocrit, hemoglobin, final body weights and greater liver/body weight ratios and weight loss than control birds. The study showed that raptors and possibly other predators are at risk both when consuming flesh of prey that have succumbed to WP poisoning and when ingesting WP pellets that are incorporated in body parts but that the risk is greater when pellets are present.

  17. Laws of phase formation in ion-implanted metals

    International Nuclear Information System (INIS)

    Kazdaev, H.R.; Abylkhalykova, R.B.; Skakov, M.K.

    2004-01-01

    Full text: Main laws of ordered structures formation at molybdenum implantation by elements forming phases of introduction (B, C, N, 0, Si, P, S) are discovered in this work. According to them the character of structural and phase transformations in molybdenum at ion implantation is determined not by kinetic parameters of bombarding particles and their chemical activity but by size factor η x/Me (ratio of nuclear radii of introduced elements and atoms of a matrix). At change of its meaning in the certain limits the following can be observed: superstructures formation (η x/Mo x/Mo x/Mo >0.69). In the latter case at the further implantation doze increasing recrystallization of molybdenum monocrystalline layers amorphized during previous bombarding with chemical connection formation takes place, characterized by us as ion-inducted synthesis. The phenomenon discovered on the samples implanted by phosphorus ions. As the result, the high-temperature phase of molybdenum monophosphide MoP having densely situated lattice was synthesized. The complete confirmation of the main laws of structural and phased transformations at ion implantation established by results on molybdenum monocrystals with OCC lattice was achieved at realization of similar researches on the other transitive metal - zirconium which differs from molybdenum according to a number of attributes: a type of an initial lattice structural condition (large scaled polycrystal), presence of interparticle borders and high solubility of atmospheric impurities (nitrogen, carbon, oxygen). The discovered laws have proved to be true also according to ion implanted samples of monocrystal tungsten and polycrystal tantalum

  18. Highly-focused boron implantation in diamond and imaging using the nuclear reaction {sup 11}B(p, α){sup 8}Be

    Energy Technology Data Exchange (ETDEWEB)

    Ynsa, M.D., E-mail: m.ynsa@uam.es [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física Aplicada, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Ramos, M.A. [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física de la Materia Condensada and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Skukan, N. [Laboratory for Ion Beam Interactions, Ruđer Bošković Institute, Bijenička 54, HR-10000 Zagreb (Croatia); Torres-Costa, V. [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física Aplicada, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Jakšić, M. [Laboratory for Ion Beam Interactions, Ruđer Bošković Institute, Bijenička 54, HR-10000 Zagreb (Croatia)

    2015-04-01

    Diamond is an especially attractive material because of its gemological value as well as its unique mechanical, chemical and physical properties. One of these properties is that boron-doped diamond is an electrically p-type semiconducting material at practically any boron concentration. This property makes it possible to use diamonds for multiple industrial and technological applications. Boron can be incorporated into pure diamond by different techniques including ion implantation. Although typical energies used to dope diamond by ion implantation are about 100 keV, implantations have also been performed with energies above MeV. In this work CMAM microbeam setup has been used to demonstrate capability to implant boron with high energies. An 8 MeV boron beam with a size of about 5 × 3 μm{sup 2} and a beam current higher than 500 pA has been employed while controlling the beam position and fluence at all irradiated areas. The subsequent mapping of the implanted boron in diamond has been obtained using the strong and broad nuclear reaction {sup 11}B(p, α){sup 8}Be at E{sub p} = 660 keV. This reaction has a high Q-value (8.59 MeV for α{sub 0} and 5.68 MeV for α{sub 1}) and thus is almost interference-free. The sensitivity of the technique is studied in this work.

  19. Quantitative ion implantation

    International Nuclear Information System (INIS)

    Gries, W.H.

    1976-06-01

    This is a report of the study of the implantation of heavy ions at medium keV-energies into electrically conducting mono-elemental solids, at ion doses too small to cause significant loss of the implanted ions by resputtering. The study has been undertaken to investigate the possibility of accurate portioning of matter in submicrogram quantities, with some specific applications in mind. The problem is extensively investigated both on a theoretical level and in practice. A mathematical model is developed for calculating the loss of implanted ions by resputtering as a function of the implanted ion dose and the sputtering yield. Numerical data are produced therefrom which permit a good order-of-magnitude estimate of the loss for any ion/solid combination in which the ions are heavier than the solid atoms, and for any ion energy from 10 to 300 keV. The implanted ion dose is measured by integration of the ion beam current, and equipment and techniques are described which make possible the accurate integration of an ion current in an electromagnetic isotope separator. The methods are applied to two sample cases, one being a stable isotope, the other a radioisotope. In both cases independent methods are used to show that the implantation is indeed quantitative, as predicted. At the same time the sample cases are used to demonstrate two possible applications for quantitative ion implantation, viz. firstly for the manufacture of calibration standards for instrumental micromethods of elemental trace analysis in metals, and secondly for the determination of the half-lives of long-lived radioisotopes by a specific activity method. It is concluded that the present study has advanced quantitative ion implantation to the state where it can be successfully applied to the solution of problems in other fields

  20. Ion implantation - an introduction

    International Nuclear Information System (INIS)

    Townsend, P.D.

    1986-01-01

    Ion implantation is a widely used technique with a literature that covers semiconductor production, surface treatments of steels, corrosion resistance, catalysis and integrated optics. This brief introduction outlines advantages of the technique, some aspects of the underlying physics and examples of current applications. Ion implantation is already an essential part of semiconductor technology while in many other areas it is still in an early stage of development. The future scope of the subject is discussed. (author)

  1. Contributions to total phosphorus intake: all sources considered.

    Science.gov (United States)

    Calvo, Mona S; Uribarri, Jaime

    2013-01-01

    High serum phosphorus is linked to poor health outcome and mortality in chronic kidney disease (CKD) patients before or after the initiation of dialysis. Dietary intake of phosphorus, a major determinant of serum phosphorus, seems to be systematically underestimated using the available software tools and generalized nutrient content databases. Several sources of dietary phosphorus including the addition of phosphorus ingredients in food processing, and phosphorus content of vitamin and mineral supplements and commonly used over-the-counter or prescription medications are not fully accounted for by the nutrient content databases and software programs in current clinical use or used in large population studies. In this review, we explore the many unknown sources of phosphorus in the food supply to identify all possible contributors to total phosphorus intake of Americans that have escaped inclusion in past intake estimates. Our goal is to help delineate areas for future interventions that will enable tighter control of dietary phosphorus intake, a critical factor to maintaining health and quality of life in CKD and dialysis patients. © 2012 Wiley Periodicals, Inc.

  2. Evaluation of added phosphorus in six volcanic ash soils

    International Nuclear Information System (INIS)

    Pino N, I.; Casas G, L.; Urbinsa P, M.C.

    1984-01-01

    The behaviour of added phosphorus in six volcanic ash soils (Andepts) was studied. Two phosphate retention solution were used; one of them labeled with 32 P carrier free. The phosphate retention solution (25 ml) was added to 5 gr of air dry soil. The remainder phosphorus in solution was measured through colorimetry and liquid scintillation. Over 85% phosphorus retention was measured in five soils. A phosphate retention solution labeled with 32 P carrier free proved to be efficient for the determination of phosphorus retention rates in the volcanic ash soils studied. (Author)

  3. A new model of anomalous phosphorus diffusion in silicon

    International Nuclear Information System (INIS)

    Budil, M.; Poetzl, H.; Stingeder, G.; Grasserbauer, M.

    1989-01-01

    A model is presented to describe the 'kink and tail' diffusion of phosphorus. The diffusion behaviour of phosphorus is expplained by the motion of phosphorus-interstitial and phosphorus-vacancy pairs in different charge states. The model yields the enhancement of diffusion in the tail region depending on surface concentration. Furthermore it yields the same selfdiffusion coefficient for interstitials as the gold diffusion experiments. A transformation of the diffusion equation was found to reduce the number of simulation equations. (author) 7 refs., 5 figs

  4. Relative efficiency of different methods of phosphorus (32P) application on fertilizer phosphorus uptake by maize (zea may L.)

    International Nuclear Information System (INIS)

    Chaudhary, M.L.; Gupta, A.P.

    1975-01-01

    A green house study was conducted for comparing four methods of phosphorus application (broad cast, below the seed, one side and both sides of the seeds) at the rate of 60 ppm in sierozem soil of H issar (Haryana). Maize crop was planted in 50 cm. bottomless bitumin drums for 70 days i.e. upto tasseling stage. The plant samples were collected at jointing and tasseling stages of plant growth. The results revealed that the highest dry matter yield, total and fertilizer phosphorus uptake was observed when the phosphorus was applied below the seed, followed by both side application of phosphorus. The least yield, total and fertilizer phosphorus uptake were recorded when the phosphorus was broadcast at the time of sowing. (author)

  5. Effect of phytase supplementation on apparent phosphorus digestibility and phosphorus output in broiler chicks fed low-phosphorus diets

    Directory of Open Access Journals (Sweden)

    Xian-Ren Jiang

    2015-04-01

    Full Text Available This study was conducted to evaluate the effect of supplemental phytase in broiler chicks fed different low levels of total phosphorus (P on the apparent phosphorus digestibility (APD and phosphorus output (PO in the faeces and ileal digesta. After fed a standard broiler starter diet from day 0 to 14 post-hatch, a total of 144 male broiler chicks were allocated to 6 groups for a 7-d experiment with a 2 × 3 factorial design comparing phytase (supplemented without (CTR or with 400 FTU/kg phytase (PHY and total P levels (2.0, 2.5 and 3.0 g/kg. The faecal samples were collected from day 17 to 21 post-hatch. At 22 days of age, all the chicks were slaughtered and collected the ileal digesta. Phytase supplementation significantly (P < 0.01 increased APD and decreased PO in the faeces and ileal digesta in comparison with the CTR group. In addition, PO in the faeces expressed as g/kg DM diets and faeces (Diet × P level, P = 0.047 and < 0.01, respectively as well as PO in the ileal digesta expressed as g/kg DM digesta (Diet × P level, P = 0.04 were affected by diet and P level, which were due to the significant reduction (P < 0.01 by PHY supplementation to the diets with 3.0 g/kg total P. The results evidenced that supplemental phytase improved the APD and PO when chicks was fed 3.0 g/kg total P diet, while lower total P levels may limit exogenous phytase efficacy.

  6. Contraceptive implants: current perspectives

    Directory of Open Access Journals (Sweden)

    Rowlands S

    2014-09-01

    Full Text Available Sam Rowlands,1,2 Stephen Searle3 1Centre of Postgraduate Medical Research and Education, School of Health and Social Care, Bournemouth University, Bournemouth, United Kingdom; 2Dorset HealthCare, Bournemouth, United Kingdom; 3Sexual Health Services, Chesterfield, United KingdomAbstract: Progestin-only contraceptive implants are a highly cost-effective form of long-acting reversible contraception. They are the most effective reversible contraceptives and are of a similar effectiveness to sterilization. Pregnancies are rare in women using this method of contraception, and those that do occur must be fully investigated, with an ultrasound scan of the arm and serum etonogestrel level if the implant cannot be located. There are very few contraindications to use of implants, and they have an excellent safety profile. Both acceptability and continuation with the method are high. Noncontraceptive benefits include improvements in dysmenorrhea, ovulatory pain, and endometriosis. Problematic bleeding is a relatively common adverse effect that must be covered in preinsertion information-giving and supported adequately if it occurs. Recognized training for both insertion and removal should be undertaken. Care needs to be taken at both insertion and removal to avoid neurovascular injury. Implants should always be palpable; if they are not, noninsertion should be assumed until disproven. Etonogestrel implants are now radiopaque, which aids localization. Anticipated difficult removals should be performed by specially trained experts. Keywords: contraceptive, subdermal implant, etonogestrel, levonorgestrel, progestin-only, long-acting reversible contraception

  7. Anodized dental implant surface

    Directory of Open Access Journals (Sweden)

    Sunil Kumar Mishra

    2017-01-01

    Full Text Available Purpose: Anodized implants with moderately rough surface were introduced around 2000. Whether these implants enhanced biologic effect to improve the environment for better osseointegration was unclear. The purpose of this article was to review the literature available on anodized surface in terms of their clinical success rate and bone response in patients till now. Materials and Methods: A broad electronic search of MEDLINE and PubMed databases was performed. A focus was made on peer-reviewed dental journals. Only articles related to anodized implants were included. Both animal and human studies were included. Results: The initial search of articles resulted in 581 articles on anodized implants. The initial screening of titles and abstracts resulted in 112 full-text papers; 40 animal studies, 16 studies on cell adhesion and bacterial adhesion onto anodized surfaced implants, and 47 human studies were included. Nine studies, which do not fulfill the inclusion criteria, were excluded. Conclusions: The long-term studies on anodized surface implants do favor the surface, but in most of the studies, anodized surface is compared with that of machined surface, but not with other surfaces commercially available. Anodized surface in terms of clinical success rate in cases of compromised bone and immediately extracted sockets has shown favorable success.

  8. Plasma source ion implantation

    International Nuclear Information System (INIS)

    Conrad, J.R.; Forest, C.

    1986-01-01

    The authors' technique allows the ion implantation to be performed directly within the ion source at higher currents without ion beam extraction and transport. The potential benefits include greatly increased production rates (factors of 10-1000) and the ability to implant non-planar targets without rastering or shadowing. The technique eliminates the ion extractor grid set, beam raster equipment, drift space and target manipulator equipment. The target to be implanted is placed directly within the plasma source and is biased to a large negative potential so that plasma ions gain energy as they accelerate through the potential drop across the sheath that forms at the plasma boundary. Because the sheath surrounds the target on all sides, all surfaces of the target are implanted without the necessity to raster the beam or to rotate the target. The authors have succeeded in implanting nitrogen ions in a silicon target to the depths and concentrations required for surface treatment of materials like stainless steel and titanium alloys. They have performed ESCA measurements of the penetration depth profile of a silicon target that was biased to 30 kV in a nitrogen discharge plasma. Nitrogen ions were implanted to a depth of 700A at a peak concentration of 30% atomic. The measured profile is quite similar to a previously obtained profile in titanium targets with conventional techniques

  9. Doping of GaN by ion implantation: Does It Work?

    International Nuclear Information System (INIS)

    Suvkhanov, A.; Wu, W.; Price, K.; Parikh, N.; Irene, E.; Hunn, J.; Thomson, D.; Davis, R.F.; Krasnobaev, L.

    1998-04-01

    Epitaxially grown GaN by metal organic chemical vapor deposition (MOCVD) on SiC were implanted with 100 keV Si + (for n-type) and 80 keV Mg + (for p-type) with various fluences from 1 x 10 12 to 7 x 10 15 ions/cm 2 at liquid nitrogen temperature (LT), room temperature (RT), and 700 C (HT). High temperature (1,200 C and 1,500 C) annealing was carried out after capping the GaN with epitaxial AlN by MOCVD to study damage recovery. Samples were capped by a layer of AlN in order to protect the GaN surface during annealing. Effects of implant temperature, damage and dopant activation are critically studied to evaluate a role of ion implantation in doping of GaN. The damage was studied by Rutherford Backscattering/Channeling, spectroscopic ellipsometry and photoluminescence. Results show dependence of radiation damage level on temperature of the substrate during implantation: implantations at elevated temperatures up to 550 C decrease the lattice disorder; hot implants above 550 C can not be useful in doping of GaN due to nitrogen loss from the surface. SE measurements have indicated very high sensitivity to the implantation damage. PL measurements at LT of 80 keV Mg + (5 x 10 14 cm 2 ) implanted and annealed GaN showed two peaks: one ∼ 100 meV and another ∼ 140 meV away from the band edge

  10. Charge measurement system at 100 MeV linac

    International Nuclear Information System (INIS)

    Li Dongmei; Chinese Academy of Sciences, Beijing; Yin Chongxian; Ye Kairong

    2005-01-01

    A charge measurement system of 100 Mev linac is introduced in this paper. After describing the characteristics and functions of the system's components, the authors analyze the methods of data processing and systematic error in detail. Basing on these, the authors get system resolution in the lab. The actual measurement results are presented at last. (authors)

  11. 3 MeV DC accelerator, EBC Kharghar

    International Nuclear Information System (INIS)

    Bakhtsingh, R.I.; Acharya, S.

    2017-01-01

    The Accelerator and Pulse Power Division (APPD) has designed and developed a 3 MeV, 10 mA DC electron beam accelerator at Electron Beam Centre, Kharghar, Navi Mumbai. This machine has been utilized for reduction of SO_x and NO_x in simulated flue gases and treatment of waste water to reduce COD and BOD

  12. Linac4 crosses the 100 MeV threshold

    CERN Multimedia

    Corinne Pralavorio

    2016-01-01

    The new linear accelerator, which from 2020 will be the first link in the accelerator chain, has entered a new stage of its commissioning.   Members of the team in charge of the commissioning of Linac4 in the accelerator’s control room. A few hours earlier, Linac4 accelerated a beam to 107 MeV for the first time. We couldn’t have imagined a more appropriate date: on 1 July (1.07), Linac4 reached an energy of 107 MeV. Having crossed the 100 MeV barrier, the linear accelerator is now on the home straight of its commissioning. “This stage was very quick – it took less than two weeks,” says Alessandra Lombardi, deputy project leader of Linac4, in charge of the commissioning. In 2020, Linac4 will replace the existing Linac2 as the first link in the accelerator chain. It will accelerate beams of H- ions (protons surrounded by two electrons) to 160 MeV, compared to 50 MeV with Linac2. The new machine is particularly sophisticated as it comprises...

  13. A 30 MeV H- cyclotron for isotope production

    International Nuclear Information System (INIS)

    Milton, B.F.; Dawson, R.; Erdman, K.L.

    1989-05-01

    Because of an expanding market for radioisotopes there is a need for a new generation of cyclotrons designed specifically for this purpose. TRIUMF is cooperating with a local industrial company in designing and constructing such a cyclotron. It will be a four sector H - cyclotron, exploiting the newly developed high brightness multicusp ion source. This source with H - current capability in excess of 5 mA makes feasible accelerated H - beam intensities of up to 500 μA. Beam extraction is by stripping to H + in a thin graphite foil. Extraction of two high-intensity beams, with energy variable from 15 to 30 MeV is planned. The use of an external ion source, provision of a good vacuum in the acceleration region, and the careful choice of materials for components in the median plane leads to a cyclotron that will have low activation and can be easily serviced in spite of the very high operating beam intensities. A design extension to 70 MeV using many of the design features of the 30 MeV cyclotron can be easily made. Such a machine with a good quality variable energy beam is a highly desirable source of protons for isotope production, injection into higher energy high intensity acceleration, injection into higher energy high intensity accelerators, and as an irradiation facility for ocular melanomas. Design of the 30 MeV cyclotron is well advanced and construction is in progress

  14. MEV Energy Electrostatic Accelerator Ion Beam Emittance Measurement

    OpenAIRE

    I.G. Ignat’ev; M.I. Zakharets; S.V. Kolinko; D.P. Shulha

    2014-01-01

    The testing equipment was designed, manufactured and tried out permitting measurements of total current, current profile and emittance of an ion beam extracted from the ion beam. MeV energy electrostatic accelerator ion H + beam emittance measurement results are presented.

  15. (n, Xn) cross sections measurements at 96 MeV

    International Nuclear Information System (INIS)

    Sagrado Garcia, Inmaculada C.

    2006-01-01

    Nucleon induced reactions in the 20-200 MeV energy range are intensively studied since a long time. The evaporation and the pre-equilibrium processes correspond to an important contribution of the production cross section in these reactions. Several theoretical approaches have been proposed and their predictions must be tested. The experimental results shown in this work are the only complete set of data for the (n, Xn) reactions in this energy range. Neutron double differential cross sections measurements using lead and iron targets for an incident neutron beam at 96 MeV were carried out at TSL laboratory, in Uppsala (Sweden). The measurements have been performed for the first time with an energy threshold of 2 MeV and for a wide angular range (15 deg.-98 deg.). Neutrons have been detected using two independent setups, DECOI and DEMON and CLODIA and SCANDAL, in order to cover the whole energy range (2-100 MeV). The angular distributions, the differential cross sections and the total inelastic production cross sections have been calculated using the double differential cross sections. The comparisons between the experimental data and the predictions given by two of the most popular simulation codes, GEANT3 and MCNPX, have been performed, as well as the comparison with the predictions of the microscopic simulation model DYWAN, selected for its original treatment of nucleon-nucleus reactions. (author) [fr

  16. Alpha-deuteron elastic scattering around 40 MeV

    International Nuclear Information System (INIS)

    De, A.; Karmakar, S.; Roychaudhury, T.; Dasgupta, S.S.; Chintalapudi, S.N.; Ismail, M.; Banerjee, S.R.; Divatia, A.S.

    1989-01-01

    Differential cross section for alpha-deuteron elastic scattering has been measured at several energies around 40 MeV incident alpha. General behaviour of angular distributions remaining close to that predicted by Faddeev type calculations, a sharp energy dependence is observed. (author). 8 refs

  17. History of the ZGS 500 MeV booster.

    Energy Technology Data Exchange (ETDEWEB)

    Simpson, J.; Martin; R.; Kustom, R.

    2006-05-09

    The history of the design and construction of the Argonne 500 MeV booster proton synchrotron from 1969 to 1982 is described. This accelerator has since been in steady use for the past 25 years to power the Argonne Intense Pulsed Neutron Source (IPNS).

  18. 200 MeV RF linac for synchrotron injection

    International Nuclear Information System (INIS)

    Whitham, K.; Anamkath, H.; Lyons, S.; Manca, J.; Miller, R.; Treas, P.; Zante, T.; Miller, R.

    1992-01-01

    Construction has been completed on an electron linear accelerator for the Brookhaven National Laboratory. This accelerator will be used for the injection of a 200 MeV electron beam into a synchrotron for lithography experiments. This paper describes the conceptual design of the linac, its e-gun pulser, and its control and timing systems. 3 figs., ref

  19. Short dental implants: an emerging concept in implant treatment.

    Science.gov (United States)

    Al-Hashedi, Ashwaq Ali; Taiyeb Ali, Tara Bai; Yunus, Norsiah

    2014-06-01

    Short implants have been advocated as a treatment option in many clinical situations where the use of conventional implants is limited. This review outlines the effectiveness and clinical outcomes of using short implants as a valid treatment option in the rehabilitation of edentulous atrophic alveolar ridges. Initially, an electronic search was performed on the following databases: Medline, PubMed, Embase, Cochrane Database of Systematic Reviews, and DARE using key words from January 1990 until May 2012. An additional hand search was included for the relevant articles in the following journals: International Journal of Oral and Maxillofacial Implants, Clinical Oral Implants Research, Journal of Clinical Periodontology, International Journal of Periodontics, Journal of Periodontology, and Clinical Implant Dentistry and Related Research. Any relevant papers from the journals' references were hand searched. Articles were included if they provided detailed data on implant length, reported survival rates, mentioned measures for implant failure, were in the English language, involved human subjects, and researched implants inserted in healed atrophic ridges with a follow-up period of at least 1 year after implant-prosthesis loading. Short implants demonstrated a high rate of success in the replacement of missing teeth in especially atrophic alveolar ridges. The advanced technology and improvement of the implant surfaces have encouraged the success of short implants to a comparable level to that of standard implants. However, further randomized controlled clinical trials and prospective studies with longer follow-up periods are needed.

  20. Formation of p-type ZnO thin film through co-implantation

    Science.gov (United States)

    Chuang, Yao-Teng; Liou, Jhe-Wei; Woon, Wei-Yen

    2017-01-01

    We present a study on the formation of p-type ZnO thin film through ion implantation. Group V dopants (N, P) with different ionic radii are implanted into chemical vapor deposition grown ZnO thin film on GaN/sapphire substrates prior to thermal activation. It is found that mono-doped ZnO by N+ implantation results in n-type conductivity under thermal activation. Dual-doped ZnO film with a N:P ion implantation dose ratio of 4:1 is found to be p-type under certain thermal activation conditions. Higher p-type activation levels (1019 cm-3) under a wider thermal activation range are found for the N/P dual-doped ZnO film co-implanted by additional oxygen ions. From high resolution x-ray diffraction and x-ray photoelectron spectroscopy it is concluded that the observed p-type conductivities are a result of the promoted formation of PZn-4NO complex defects via the concurrent substitution of nitrogen at oxygen sites and phosphorus at zinc sites. The enhanced solubility and stability of acceptor defects in oxygen co-implanted dual-doped ZnO film are related to the reduction of oxygen vacancy defects at the surface. Our study demonstrates the prospect of the formation of stable p-type ZnO film through co-implantation.

  1. Model of the recrystallization mechanism of amorphous silicon layers created by ion implantation

    International Nuclear Information System (INIS)

    Drosd, R.M.

    1979-11-01

    The recrystallization behavior during annealing of thin films of amorphous (α) silicon, in contact with a single crystal silicon substrate (referred to as C), has been studied in the transmission electron microscope (TEM). The amorphous film is created during high dose phosphorus ion implantation at 100 keV. It was found that the crystal substrate orientation and the implantation temperature have dramatic effects on the recrystallizaton rate, and the defect microstructure produced during annealing. Specifically, (100) wafers implanted at 77 0 K contain only a low density of dislocation loops, but when the same wafer is implanted at room temperature the dislocation density is increased drastically. (111) wafers, when implanted at 77 0 K show a high density of microtwins, but as the implantation temperature is increased a gradual increase in the density of dislocation loops is observed along with a reduction of the microtwins. At an implantation temperature of about 100 0 C both orientations give an identical defect microstructure when annealed, which is a dense tangle of dislocations

  2. Ethylene: a regulator of root architectural responses to soil phosphorus availability

    NARCIS (Netherlands)

    Borch, K.; Bouma, T.J.; Lynch, J.P.; Brown, K.M.

    1999-01-01

    The involvement of ethylene in root architectural responses to phosphorus availability was investigated in common bean (Phaseolus vulgaris L,) plants grown with sufficient and deficient phosphorus. Although phosphorus deficiency reduced root mass and lateral root number, main root length was

  3. Analysis of As implantation profiles in silica by nuclear microanalysis and secondary ion emission

    International Nuclear Information System (INIS)

    Dieumegard, D.; Croset, M.; Cohen, C.; Lhoir, A.; Rigo, S.; Chaumont, J.

    1974-01-01

    Results obtained from analysis using, either the method of elastic backscattering of light or semi-heavy ions ( 4 He + , 14 N + ) about one MeV energy, or the secondary ion emission method are compared. The choice of As implanted Si is explained by the following reasons: As is an element relatively heavy in comparison with Si, that allows an analysis to be effected on a few thousands Angstroems depth in silica using elastic backscattering; the silica chosen as substrate being an amorphous material allows channeling phenomena to the avoided during implantation and analysis [fr

  4. Formation of cBN nanocrystals by He+ implantations of hBN

    OpenAIRE

    Machaka, Ronald; Erasmus, Rudolph M; Derry, Trevor E

    2010-01-01

    The structural modifications of polycrystalline hexagonal boron nitride implanted with He+ ion beams at energies between 200 keV and 1.2 MeV to fluences of 1.0 \\times 1017 ions \\cdot cm-2 were investigated using micro-Raman spectroscopy. The measured Raman spectra show evidence of implantation-induced structural transformations from the hexagonal phase to nanocrystalline cubic boron nitride, rhombohedral boron nitride and amorphous boron nitride phases. The first-order Longitudinal-Optical cB...

  5. Escaping 1 MeV tritons in TFTR

    International Nuclear Information System (INIS)

    Zweben, S.J.; Strachan, J.D.; Boivin, R.; Cavallo, A.; Fredrickson, E.D.; McGuire, K.; Mynick, H.E.; White, R.B.

    1989-01-01

    1 MeV tritons created by D-D reactions can simulate the 'single-particle' behavior expected with 3.5 MeV D-T alphas, since the gyroradii and slowing-down of these two particles are similar. This paper describes measurements of the flux of escaping 1 MeV tritons from the TFTR plasma during high power D 0 →D neutral beam injection, and shows that in most cases the observed triton loss is consistent with the classical (single-particle) first-orbit loss model. In this model tritons are lost if their first orbit intersects the wall due to their large banana width, while almost all tritons confined on their first orbit should stay confined until thermalized. The triton detectors are ZnS(Ag) scintillator screens housed in light-tight boxes located just outside the plasma boundary at the bottom of the TFTR vessel. They are particle 'pinhole' cameras which can resolve the triton flux vs. pitch angle (to ±5 o ), energy (to ±50 %), and time (to <20 μsec). The 2-D images of triton flux onto these scintillators are optically coupled to either an intensified TV camera or to photomultiplyer tubes for fast time resolution. The soft x-ray background in an earlier prototype has been eliminated. Although there are presently 8 such detectors in TFTR, this paper discusses results from only the detector located just below the vessel center (R=259 cm, r=102 cm). Note that the '1 MeV triton' signal discussed below also has about a 30 % contribution from 3 MeV protons; however, since these two particles have identical gyroradii they should behave alike. 5 refs., 5 figs

  6. The Fermilab 400-MeV Linac Upgrade

    International Nuclear Information System (INIS)

    Schmidt, C.W.

    1993-05-01

    The Fermilab Linac Upgrade will increase the linac energy from 201 MeV to 401.5 MeV. Seven accelerating modules, composed of 805-MHz side-coupled cells, will accelerate H - beams from 116.5 to 401.5 MeV. The side-coupled structure (SCS) has been built, tuned, tested to full power, and placed in the linac enclosure along side the operating Linac. All seven accelerating modules, each containing four sections of sixteen cells, have been connected to 12-MW power klystrons and tested to full power for a significant period. The transition section to match the beam from the 201.25-MHz drift-tube linac to the SCS, consisting of a sixteen-cell cavity and a vernier four-cell cavity, has also been tested at full power. A new import line from the Linac to the Booster synchrotron with a new Booster injection girder is to be installed. Removal of the last four Alvarez linac tanks (116.5 to 201 MeV) and beam-line installation of the Upgrade components is to begin in early June 1993 and should take about 12 weeks. Beam commissioning of the project will follow and normal operation is expected in a short period. In preparation for beam commissioning, studies are being done with done operating linac to characterize the beam at transition and prepare for phase, amplitude and energy measurements to commission the new linac. The past, present and future activities of the 400-MeV Upgrade will be reviewed

  7. Effect of mycorrhiza on growth criteria and phosphorus nutrition of lettuce (Lactuca sativa L. under different phosphorus application rates

    Directory of Open Access Journals (Sweden)

    S. Fatih Ergin

    2016-10-01

    Full Text Available In this study, effect of mycorrhiza on growth criteria and phosphorus nutrition of lettuce (Lactuca sativa L. under different phosphorus fertilization rates were investigated. Phosphorus were added into growing media as 0, 50, 100 and 200 mg P2O5/kg with and without mycorrhiza applications. Phosphorus applications significantly increased yield criteria of lettuce according to the control treatment statistically. Mycorrhiza application also significantly increased plant diameter, plant dry weight and phosphor uptake by plant. The highest phosphorus uptakes by plants were determined in 200 mg P2O5/kg treatments as 88.8 mg P/pot with mycorrhiza and 83.1 mg P/pot without mycorrhiza application. In the control at 0 doses of phosphorus with mycorrhiza treatment, phosphorus uptake (69.9 mg P/pot, edible weight (84.36 g, dry weight (8.64 g and leaf number (28 of lettuce were higher than that (47.7 mg P/pot, 59.33 g, 6.75 g and 20, respectively in the control without mycorrhiza application. It was determined that mycorrhiza had positive effect on growth criteria and phosphorus nutrition by lettuce plant, and this effect decreased at higher phosphorus application rates.

  8. Cluster ion-surface interactions: from meV to MeV energies

    Energy Technology Data Exchange (ETDEWEB)

    Nordlund, Kai; Meinander, Kristoffer; Jaervi, Tommi T.; Peltola, Jarkko; Samela, Juha [Accelerator Laboratory, University of Helsinki (Finland)

    2008-07-01

    The nature of cluster ion-surface interactions changes dramatically with the kinetic energy of the incoming cluster species. In this talk I review some of our recent work on the nature of cluster-surface interactions spanning an energy range from a few MeV/cluster to about 1 MeV/cluster and cluster sizes in the range of 10 - 1000 atoms/cluster. In the energy range of a few MeV/cluster ion, the kinetic energy of the incoming ion is insignificant compared to the energy gained when the surface potential energy at the cluster-surface interface is released and partly translated into kinetic energy. Even in this energy regime I show that surprisingly drastic effects can occur. When the energy of the incoming cluster is raised to a few eV/atom, the kinetic energy of the incoming cluster starts to affect the deposition. It will cause the cluster to entirely reform on impact. When the energy is raised to the range of keV's/cluster, the clusters start to penetrate the sample, fairly similar to conventional ion implantation. However, in dense targets the cluster ions may stick close to each other long enough to cause a significant enhancement of the heat spike in the material. Finally, I show that at kinetic energies around 1 MeV/cluster the cluster enhancement of the heat spike may lead to dramatic surface effects.

  9. Using a phosphorus loss model to evaluate the Kentucky phosphorus index

    Science.gov (United States)

    U.S. Department of Agriculture’s Natural Resource Conservation Service (USDA-NRCS) has recently revised its 590 Nutrient Management Conservation Standard. As part of this revision, USDA-NRCS is requiring states to test the accuracy of their phosphorus (P) index using either measured P loss data or s...

  10. Phosphorus solubility in an acid forest soil as influenced by form of applied phosphorus and liming

    International Nuclear Information System (INIS)

    Fransson, Ann-Mari; Bergkvist, Bo; Tyler, Germund

    1999-01-01

    Sedimentary phosphorus, superphosphate, and wood-ash, as well as either sedimentary phosphorus. superphosphate or ash combined with lime, were distributed in selected plots in an 80-yr-old Norway spruce forest [Picea abies (L.) Karst]. After 2 yrs, the sedimentary phosphorus had increased the oxalate/oxalic acid-extractable P in the O-horizon, and the superphosphate had increased the oxalate/oxalic acid-extractable P in the E-horizon. At first, the percolation water from the superphosphate treatment showed high P concentrations. It soon returned to control levels, however. The percolation water from the sedimentary phosphorus treatment gradually showed increased phosphate concentrations. The wood-ash increased neither the amount of extractable P nor the P concentration in the percolation water. The oxalate/oxalic acid-extractable P from the sedimentary P treatment was reduced by liming. The P concentration in the percolation water also tended to be reduced. This was perhaps due to formation of Ca phosphates in the vicinity of the lime particles. In addition, if the solubility rate was similar to the uptake rate, it could account for the decreased P concentration

  11. Transformation of apatite phosphorus and non-apatite inorganic phosphorus during incineration of sewage sludge.

    Science.gov (United States)

    Li, Rundong; Zhang, Ziheng; Li, Yanlong; Teng, Wenchao; Wang, Weiyun; Yang, Tianhua

    2015-12-01

    The recovery of phosphorus from incinerated sewage sludge ash (SSA) is assumed to be economical. Transformation from non-apatite inorganic phosphorus (NAIP) to apatite phosphorus (AP), which has a higher bioavailability and more extensive industrial applications, was studied at 750-950°C by sewage sludge incineration and model compound incineration with a calcium oxide (CaO) additive. Thermogravimetric differential scanning calorimetry analysis and X-ray diffraction measurements were used to analyze the reactions between NAIP with CaO and crystallized phases in SSA. High temperatures stimulated the volatilization of NAIP instead of AP. Sewage sludge incineration with CaO transformed NAIP into AP, and the percentage of AP from the total phosphorus reached 99% at 950°C. Aluminum phosphate reacted with CaO, forming Ca2P2O7 and Ca3(PO4)2 at 750-950°C. Reactions between iron phosphate and CaO occurred at lower temperatures, forming Ca(PO3)2 before reaching 850°C. Copyright © 2015 Elsevier Ltd. All rights reserved.

  12. Selection of phosphorus solubilizing bacteria with biocontrol potential for growth in phosphorus rich animal bone charcoal

    NARCIS (Netherlands)

    Postma, J.; Nijhuis, E.H.; Sommeus, E.

    2010-01-01

    Bacteria with the ability to solubilize phosphorus (P) and to improve plant health were selected and tested for growth and survival in P-rich animal bone charcoal (ABC). ABC is suggested to be suitable as a carrier for biocontrol agents, offering them a protected niche as well as delivering

  13. Phosphorus fractions and phosphorus sorption characteristics of freshwater sediments and their relationship to sediment composition

    Czech Academy of Sciences Publication Activity Database

    Borovec, Jakub; Hejzlar, Josef

    2001-01-01

    Roč. 151, č. 4 (2001), s. 687-703 ISSN 0003-9136 R&D Projects: GA ČR GA206/99/0028; GA ČR GA206/00/0063 Keywords : nutrients in aquatic systems * sorption/desorption of phosphorus Subject RIV: DA - Hydrology ; Limnology Impact factor: 1.186, year: 2001

  14. Urban phosphorus sustainability: Systemically incorporating social, ecological, and technological factors into phosphorus flow analysis

    Science.gov (United States)

    Genevieve S. Metson; David M. Iwaniec; Lawrence A. Baker; Elena M. Bennett; Daniel L. Childers; Dana Cordell; Nancy B. Grimm; J. Morgan Grove; Daniel A. Nidzgorski; Stuart. White

    2015-01-01

    Phosphorus (P) is an essential fertilizer for agricultural production but is also a potent aquatic pollutant. Current P management fails to adequately address both the issue of food security due to P scarcity and P pollution threats to water bodies. As centers of food consumption and waste production, cities transport and store much P and thus provide important...

  15. Phosphorus availability and microbial respiration across biomes :  from plantation forest to tundra

    OpenAIRE

    Esberg, Camilla

    2010-01-01

    Phosphorus is the main limiting nutrient for plant growth in large areas of the world and the availability of phosphorus to plants and microbes can be strongly affected by soil properties. Even though the phosphorus cycle has been studied extensively, much remains unknown about the key processes governing phosphorus availability in different environments. In this thesis the complex dynamics of soil phosphorus and its availability were studied by relating various phosphorus fractions and soil ...

  16. Digestible phosphorus levels for barrows from 50 to 80 kg

    Directory of Open Access Journals (Sweden)

    Viviane Maria Oliveira dos Santos Nieto

    2016-05-01

    Full Text Available ABSTRACT This study was carried out to evaluate the levels of digestible phosphorus in diets for barrows with a high potential for lean meat deposition from 50 to 80 kg. Eighty barrows, with an initial weight of 47.93±3.43 kg, were distributed in completely randomized blocks, with each group given five levels of digestible phosphorus (1.86, 2.23, 2.61, 2.99, and 3.36 g kg−1. There were eight replicates, and two animals per experimental unit. Phosphorus levels did not significantly influence feed intake, weight gain, or feed conversion ratio. Daily digestible phosphorus intake increased linearly as levels of phosphorus in the diet were increased. Phosphorus levels did not significantly influence muscle depth, loin eye area, backfat thickness, or the percentage and quantity of lean meat in the carcass. A linear increase was observed for feeding cost as the levels of digestible phosphorus in the diet were increased, and the level of 1.86 g kg−1 cost 29.4% less when compared with the level of 2.61 g kg−1. The dry matter, natural matter, the coefficient of the residue, and volatile solids of the waste were not significantly influenced by phosphorus levels. Conversely, it was possible to observe an increasing linear effect for total solids, total phosphorus, and total nitrogen in the waste of animals receiving diets with increased levels of digestible phosphorus. The level of 1.86 g kg−1, which corresponded to a daily intake of 4.77 g−1 of digestible phosphorus, meets the requirements of barrows weighing 50 to 80 kg.

  17. Patient education for phosphorus management in chronic kidney disease

    Directory of Open Access Journals (Sweden)

    Kalantar-Zadeh K

    2013-05-01

    Full Text Available Kamyar Kalantar-ZadehHarold Simmons Center for Kidney Disease Research and Epidemiology, Division of Nephrology and Hypertension, University of California Irvine’s School of Medicine, Irvine, CA, USAObjectives: This review explores the challenges and solutions in educating patients with chronic kidney disease (CKD to lower serum phosphorus while avoiding protein insufficiency and hypercalcemia.Methods: A literature search including terms “hyperphosphatemia,” “patient education,” “food fatigue,” “hypercalcemia,” and “phosphorus–protein ratio” was undertaken using PubMed.Results: Hyperphosphatemia is a strong predictor of mortality in advanced CKD and is remediated via diet, phosphorus binders, and dialysis. Dietary counseling should encourage the consumption of foods with the least amount of inorganic or absorbable phosphorus, low phosphorus-to-protein ratios, and adequate protein content, and discourage excessive calcium intake in high-risk patients. Emerging educational initiatives include food labeling using a “traffic light” scheme, motivational interviewing techniques, and the Phosphate Education Program – whereby patients no longer have to memorize the phosphorus content of each individual food component, but only a “phosphorus unit” value for a limited number of food groups. Phosphorus binders are associated with a clear survival advantage in CKD patients, overcome the limitations associated with dietary phosphorus restriction, and permit a more flexible approach to achieving normalization of phosphorus levels.Conclusion: Patient education on phosphorus and calcium management can improve concordance and adherence and empower patients to collaborate actively for optimal control of mineral metabolism.Keywords: hyperphosphatemia, renal diet, phosphorus binders, educational programs, food fatigue, concordance

  18. Measured neutron carbon kerma factors from 14.1 MeV to 18 MeV

    International Nuclear Information System (INIS)

    Deluca, P.M.; Barschall, H.H.; McDonald, J.C.

    1985-01-01

    For A-150 tissue-equivalent plastic, the total neutron kerma is dominated by the hydrogen kerma. Tissue kerma is inferred with reasonable accuracy by normalization to the kerma factor ratio between tissue and A-150 plastic. Because of the close match in the hydrogen abundance in these materials, the principal uncertainty is due to the kerma factors of carbon and oxygen. We have measured carbon kerma factor values of 0.183+-0.015 10 -8 cGy cm 2 and 0.210+-0.016 10 -8 cGy cm 2 at 14.1-MeV and 15-MeV neutron energy, respectively. A preliminary value of 0.297+-0.03 10 -8 cGy cm 2 has been determined at 17.9 MeV. A recent microscopic cross section measurement of the (n,n'3α) reaction in carbon at 14.1-MeV energy gives a kerma factor of 0.184+-0.019 10 -8 cGy cm 2 in agreement with the present result

  19. Measured neutron carbon kerma factors from 14.1 MeV to 18 MeV

    International Nuclear Information System (INIS)

    Deluca, P.M. Jr.; Barschall, H.H.; Haight, R.C.; McDonald, J.C.

    1984-01-01

    For A-150 tissue-equivalent plastic, the total neutron kerma is dominated by the hydrogen kerma. Tissue kerma is inferred with reasonable accuracy by normalization to the kerma factor ratio between tissue and A-150 plastic. Because of the close match in the hydrogen abundance in these materials, the principal uncertainty is due to the kerma factors of carbon and oxygen. We have measured carbon kerma factor values of 0.183 +- 0.015 10 -8 cGy cm 2 and 0.210 +- 0.16 10 -8 cGy cm 2 at 14.1-MeV and 15-MeV neutron energy, respectively. A preliminary value of 0.297 +- 0.03 10 -8 cGy cm 2 has been determined at 17.9 MeV. A recent microscopic cross section measurement of the (n,n'3α) reaction in carbon at 14.1-MeV energy gives a kerma factor of 0.184 +- 0.019 10 8 cGy cm 2 in agreement with the present result. 9 refs., 4 figs., 2 tabs

  20. Phosphorus and Fluorine - The Union for Bioregulators

    Directory of Open Access Journals (Sweden)

    Romanenko, V.

    2007-06-01

    Full Text Available The review demonstrates the very high efficiency and usefulness of the fluorine-phosphorus combination in order to synthesize organic molecules for purposes of modern life science. For biochemistry, the "P-F-union" in" biomolecules enables investigation of the enzyme structure and mechanism of action more correctly, as well as creation of new anti-body enzymes. Enhancing or regulation of inhibitor properties of these compounds, their stability or selectivity allows creation of new drugs for treatment of numerous serious diseases, especially viral infections and cancer.

  1. Uptake of phosphorus from feed by carps

    International Nuclear Information System (INIS)

    Kellermann, H.J.; Buehringer, H.

    1993-01-01

    One of the aims of the International Conference for the Protection of the North Sea is to reduce the input of nutrients by 50% within the period of 1985 -1995. This is only possible by reducing the riverine input of phosphorus into the North Sea. For the regulated shortlived isotope of this element the bioconcentration factor to fishmeat is determined by the phosporus concentration in the water on the one hand and by the biological turn over rate in tissue on the other hand. Aquaria studies of the turn over rate of carps at different feed applications reveal that the recommended bioconcentration factor does not yield the desired conservative assessment. (orig.) [de

  2. Phosphorus response in two varieties of cotton

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mahendra; Bhandari, D K; Kumar, Vinod [Haryana Agricultural Univ., Hissar (India)

    1974-09-01

    Phosphorus requirements of cotton varieties H-14 and J-34 were studied on seirozem soils of Hissar under greenhouse conditions. The dry matter yield of both the varieties increased significantly upto 120 kg/ha P after which dry matter yield decreased. Total P uptake also increased with the addition of P. The highest utilization of fertilizer P by H-14 and J-34 was observed at 240 kg and 120 kg/ha levels of applied P, respectively. H-14 utilized more native P than J-34 at all levels of P application.

  3. The compaction of fused silica resulting from ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, C.M.; Ridgway, M.C. [Australian National Univ., Canberra, ACT (Australia); Leech, P.L. [Telstra Research Laboratories, Clayton, Victoria (Australia)

    1996-12-31

    Ion implantation of fused silica results in compaction and consequently an increase in refractive index. This method of modifying the near-surface region has been shown as a potential means for fabricating single mode channel waveguides. This study has measured the compaction of the implanted regions for Si implantations as a function of dose (2x10{sup 12} - 6x10{sup l6} ions/cm{sup 2}), energy (1-9 MeV) and post-implantation annealing temperature (200-900 degree C). For a given energy, a dose-dependence of the step height (depth of compacted region) is observed for doses less than {approx}10{sup 15} ions/cm{sup 2}. At higher doses the step height saturates. For a given dose, a linear trend is evident for the step height as a function of energy suggesting that the major mechanism for this compaction is electronic stopping. As the annealing temperature increases, the step height gradually decreases from {approx}0.1-0.2 {mu} to -10-20% of the original value. From the annealing data, it is possible to extract an activation energy of 0.08 eV associated with the thermal removal of the compacted region. 4 refs., 4 figs.

  4. The compaction of fused silica resulting from ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, C M; Ridgway, M C [Australian National Univ., Canberra, ACT (Australia); Leech, P L [Telstra Research Laboratories, Clayton, Victoria (Australia)

    1997-12-31

    Ion implantation of fused silica results in compaction and consequently an increase in refractive index. This method of modifying the near-surface region has been shown as a potential means for fabricating single mode channel waveguides. This study has measured the compaction of the implanted regions for Si implantations as a function of dose (2x10{sup 12} - 6x10{sup l6} ions/cm{sup 2}), energy (1-9 MeV) and post-implantation annealing temperature (200-900 degree C). For a given energy, a dose-dependence of the step height (depth of compacted region) is observed for doses less than {approx}10{sup 15} ions/cm{sup 2}. At higher doses the step height saturates. For a given dose, a linear trend is evident for the step height as a function of energy suggesting that the major mechanism for this compaction is electronic stopping. As the annealing temperature increases, the step height gradually decreases from {approx}0.1-0.2 {mu} to -10-20% of the original value. From the annealing data, it is possible to extract an activation energy of 0.08 eV associated with the thermal removal of the compacted region. 4 refs., 4 figs.

  5. Deep penetration of polonium implanted in cadmium sulfide

    International Nuclear Information System (INIS)

    Weinmann, E.

    1975-01-01

    The distribution of 25 keV 210 Po implanted into CdS platelets was determined by means of energy analysis of the α-particles emitted by the 210 Po. Two samples were implanted along an axial channeling direction, and one along a planar channeling direction. The resulting distributions did not conform to any of the existing range theories or, in the case of axial channeling, to existing diffusion theories. A new diffusion model was formulated and fitted to the experimental data. Good agreement was obtained between this model and experiment for both the axial and the planar channeling conditions. The stopping power of CdS for He ions was measured as a preliminary step to the Po distribution measurement. A new technique was used which consisted in measuring the energy spectrum of either He ions backscattered from Bi implanted in CdS or of α-particles emitted by 210 Po implanted in CdS. A thin layer was then etched off the surface of the sample and the energy spectrum was measured again. The stopping power was calculated from these two spectra and the known thickness of the removed layer. These measurements and calculations were made for energies ranging from 0.963 to 5.3 MeV with accuracies between 12 percent and 16 percent

  6. Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

    International Nuclear Information System (INIS)

    Tsukamoto, K.; Akasaka, Y.; Horie, K.

    1977-01-01

    Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

  7. Assessing the long term impact of phosphorus fertilization on phosphorus loadings using AnnAGNPS.

    Science.gov (United States)

    Yuan, Yongping; Bingner, Ronald L; Locke, Martin A; Stafford, Jim; Theurer, Fred D

    2011-06-01

    High phosphorus (P) loss from agricultural fields has been an environmental concern because of potential water quality problems in streams and lakes. To better understand the process of P loss and evaluate the effects of different phosphorus fertilization rates on phosphorus losses, the USDA Annualized AGricultural Non-Point Source (AnnAGNPS) pollutant loading model was applied to the Ohio Upper Auglaize watershed, located in the southern portion of the Maumee River Basin. In this study, the AnnAGNPS model was calibrated using USGS monitored data; and then the effects of different phosphorus fertilization rates on phosphorus loadings were assessed. It was found that P loadings increase as fertilization rate increases, and long term higher P application would lead to much higher P loadings to the watershed outlet. The P loadings to the watershed outlet have a dramatic change after some time with higher P application rate. This dramatic change of P loading to the watershed outlet indicates that a "critical point" may exist in the soil at which soil P loss to water changes dramatically. Simulations with different initial soil P contents showed that the higher the initial soil P content is, the less time it takes to reach the "critical point" where P loadings to the watershed outlet increases dramatically. More research needs to be done to understand the processes involved in the transfer of P between the various stable, active and labile states in the soil to ensure that the model simulations are accurate. This finding may be useful in setting up future P application and management guidelines.

  8. Longitudinal Gradients in Phosphorus Characteristics in the Minnesota-Upper Mississippi River System

    National Research Council Canada - National Science Library

    James, William

    2002-01-01

    This technical note describes longitudinal patterns in soluble phosphorus and biologically available particulate phosphorus and equilibrium characteristics for suspended sediment collected at stations...

  9. Characterization of junctions produced by medium-energy ion implantation in silicon; Caracterisation de jonctions obtenues par implantation d'ions de moyenne energie dans le silicium

    Energy Technology Data Exchange (ETDEWEB)

    Monfret, A [Commissariat a l' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires

    1970-07-01

    Characteristics of diodes made by implanting 20 keV boron and phosphorus ions into silicon are reviewed. Special features of theses diodes are presented, and correlation with technology is studied. This paper includes three parts: - in the first part, the theory of range distribution is considered for both amorphous and single-crystal targets, - In the second part, a brief description of the experimental conditions is given. - In the third part, the experimental results are presented. The results lead to a schematic model of the component. They also show the influence of cleaning and annealing treatments from which optimized process of fabrication can be determined. In this study, the influence of a two stage annealing process is shown. For phosphorus and boron implants, the first stage is performed at 150 deg. C while the second stage is 450 deg. C for phosphorus and 550 deg. C for boron implants. The implanted diodes are found to exhibit good electrical characteristics. Comparisons with standard diffused diodes are quite favourable. (author) [French] On examine les caracteristiques de diodes obtenues par implantation d'ions bore et phosphore de 20 keV dans le silicium. On met en evidence le comportement particulier de ces diodes et on presente certaines correlations avec la technologie. L'expose comprend trois parties: - la premiere partie est consacree au calcul du profil de dopage en mode canalise ou non. - Dans la deuxieme partie, on decrit l'appareillage et les conditions experimentales d'implantation. - Dans la troisieme partie, on presente les resultats experimentaux. On propose un modele schematique pour expliquer le comportement des tenues en tension des diodes. L'etude des courants de fuite en fonction de la preparation des echantillons et des traitements thermiques permet de determiner des conditions optimales d'elaboration. Au cours de cette etude on met en evidence l'influence de deux stades de recuit: le premier a 150 deg. C pour les implantations de

  10. [Bilateral cochlear implants].

    Science.gov (United States)

    Müller, J

    2017-07-01

    Cochlear implants (CI) are standard for the hearing rehabilitation of severe to profound deafness. Nowadays, if bilaterally indicated, bilateral implantation is usually recommended (in accordance with German guidelines). Bilateral implantation enables better speech discrimination in quiet and in noise, and restores directional and spatial hearing. Children with bilateral CI are able to undergo hearing-based hearing and speech development. Within the scope of their individual possibilities, bilaterally implanted children develop faster than children with unilateral CI and attain, e.g., a larger vocabulary within a certain time interval. Only bilateral implantation allows "binaural hearing," with all the benefits that people with normal hearing profit from, namely: better speech discrimination in quiet and in noise, as well as directional and spatial hearing. Naturally, the developments take time. Binaural CI users benefit from the same effects as normal hearing persons: head shadow effect, squelch effect, and summation and redundancy effects. Sequential CI fitting is not necessarily disadvantageous-both simultaneously and sequentially fitted patients benefit in a similar way. For children, earliest possible fitting and shortest possible interval between the two surgeries seems to positively influence the outcome if bilateral CI are indicated.

  11. Effects of Nitrogen and Phosphorus Fertilizer on Agro ...

    African Journals Online (AJOL)

    SH

    caraway plant (Carum carvi) grown from root tubers when phosphorus was applied at the rate of 40 kg/ ha. The significant reduction in the number of days to first flower appearance, number of days to 50% flower appearance and first fruit maturity with increasing rates of phosphorus fertilizer showed that well P-fertilized T.

  12. Biological nitrogen and phosphorus removal by filamentous bacteria ...

    African Journals Online (AJOL)

    The availability of excess nutrients (phosphorus (P) and nitrogen (N)) in wastewater systems causes many water quality problems. These problems include eutrophication whereby algae grow excessively and lead to depletion of oxygen, death of the aquatic life and bad odours. Biological phosphorus removal has gained ...

  13. Anthropogenic phosphorus flow analysis of Hefei City, China.

    Science.gov (United States)

    Li, Sisi; Yuan, Zengwei; Bi, Jun; Wu, Huijun

    2010-11-01

    The substance flow analysis (SFA) method was employed to examine phosphorus flow and its connection to water pollution in the city of Hefei, China, in 2008. As human activity is the driving force of phosphorus flux from the environment to the economy, the study provides a conceptual framework for analyzing an anthropogenic phosphorus cycle that includes four stages: extraction, fabrication and manufacturing, use, and waste management. Estimates of phosphorus flow were based on existing data as well as field research, expert advice, local accounting systems, and literature. The total phosphorus input into Hefei in 2008 reached 7810 tons, mainly as phosphate ore, chemical fertilizer, pesticides, crops and animal products. Approximately 33% of the total phosphorus input left the area, and nearly 20% of that amount was discharged as waste to surface water. Effluent containing excessive fertilizer from farming operations plays an important role in phosphorus overloads onto surface water; the other major emission source is sewage discharge. We also provide suggestions for reducing phosphorus emissions, for example reducing fertilizer use, recycling farming residues, and changing human consumption patterns. Crown Copyright © 2010. Published by Elsevier B.V. All rights reserved.

  14. Suitability of Moshi Pumice for Phosphorus Sorption in Constructed ...

    African Journals Online (AJOL)

    The study of Moshi Pumice's phosphorus sorption behaviours and properties was carried out in laboratory scale where by 1-2 mm, 2-4 mm and 4-8 mm grains were tested using batch experiments. The results show that Moshi Pumice has high phosphorus sorption capacity. The sorption capacity for the Moshi Pumice was ...

  15. Evaluation of phosphorus sorption characteristics of soils from the ...

    African Journals Online (AJOL)

    The evaluation of phosphorus sorption characteristics of soils and their relation to soil properties from the Bambouto sequence of Baranka 1, Baranka 2, Femock 1 and Femock 2 has been studied. Phosphorus, an essential plant nutrient, is often not readily available to plants and this deficiency tends to limit plant growth.

  16. Structure of inorganic phosphorus-nitrogen tetrahedral compounds

    International Nuclear Information System (INIS)

    Vitola, A.; Ronis, J.; Avotins, V.; Millers, T.

    1997-01-01

    The structure analysis of phosphorus-nitrogen compounds has shown the possibility of the P(O,N) 4 tetrahedra to form various kinds of structures. The wide spectrum of the properties determined by the diversity of structures marks the considerable promise to the future application of phosphorus-nitrogen compounds

  17. The mechanism on rhizosphere phosphorus activation of two wheat ...

    African Journals Online (AJOL)

    The mechanism on rhizosphere phosphorus activation of two wheat genotypes with different phosphorus efficiency. ... genotype would be a potential approach for maintaining wheat yield potential in soils with low P bioavailability. Key words: Wheat, P efficiency, rhizosphere properties, P fractions, phosphates activity.

  18. Phosphorus run-off assessment in a watershed.

    Science.gov (United States)

    Chebud, Yirgalem; Naja, Ghinwa M; Rivero, Rosanna

    2011-01-01

    The Watershed Assessment Model was used to simulate the runoff volume, peak flows, and non-point source phosphorus loadings from the 5870 km(2) Lake Okeechobee watershed as a case study. The results were compared to on-site monitoring to verify the accuracy of the method and to estimate the observed/simulated error. In 2008, the total simulated phosphorus contribution was 9634, 6524 and 3908 kg (P) y(-1) from sod farms, citrus farms and row crop farmlands, respectively. Although the dairies represent less than 1% of the total area of Kissimmee basin, the simulated P load from the dairies (9283 kg (P) y(-1) in 2008) made up 5.4% of the total P load during 2008. On average, the modeled P yield rates from dairies, sod farms and row crop farmlands are 3.85, 2.01 and 0.86 kg (P) ha(-1) y(-1), respectively. The maximum sediment simulated phosphorus yield rate is about 2 kg (P) ha(-1) and the particulate simulated phosphorus contribution from urban, improved pastures and dairies to the total phosphorus load was estimated at 9%, 3.5%, and 1%, respectively. Land parcels with P oversaturated soil as well as the land parcels with high phosphorus assimilation and high total phosphorus contribution were located. The most critical sub-basin was identified for eventual targeting by enforced agricultural best management practices. Phosphorus load, including stream assimilation, incoming to Lake Okeechobee from two selected dairies was also determined.

  19. Identification of cowpea cultivars for low phosphorus soils of Nigeria

    International Nuclear Information System (INIS)

    Afolabi, N.O.; Ogunbodede, B.A.; Adediran, J.A.

    1996-01-01

    Twenty cultivars of cowpea, Vigna unguiculata, adapted to the Nigerian ecologies were screened to identify cultivars which can give high and sustainable yields when grown on soils with low available phosphorus in a sub-humid climate. Some cultivars including TVX3236, AFB1757, Ogunfowokan and K-28 gave three to four times higher grain yields than the other cultivars at zero phosphorus supply. While phosphorus application reduced grain yield in most of the cultivars with marked reduction in the higher yielding cultivars, low yielding cultivars tended to show some yield increase. Phosphorus use efficiency of the roots, stem or leaves was not significantly correlated with grain yield when 60 KgP/ha was applied. Reduction in yield due to phosphorus application might be due to induced Zn deficiency as Zn supply in these soils has been found to be inherently low. High grain yielding capacity without fertilizer phosphorus application was generally positively correlated with high vegetative shoot dry matter production. However, no clear relationship could be found between grain yield and root dry matter at maturity. It is concluded that selection for phosphorus efficiency in cowpea can substantially contribute to higher cowpea productivity and the farmers income on soils low in available phosphorus in the sub-humid areas of Nigeria. (author). 5 refs, 2 figs, 2 tabs

  20. Biological Phosphorus Removal in a Moving Bed Biofilm Reactor

    Energy Technology Data Exchange (ETDEWEB)

    Helness, Herman

    2007-09-15

    The scope of this study was to investigate use of the moving bed biofilm reactor (MBBR) process for biological phosphorus removal. The goal has been to describe the operating conditions required for biological phosphorus and nitrogen removal in a MBBR operated as a sequencing batch reactor (SBR), and determine dimensioning criteria for such a process

  1. Identification of cowpea cultivars for low phosphorus soils of Nigeria

    Energy Technology Data Exchange (ETDEWEB)

    Afolabi, N O; Ogunbodede, B A; Adediran, J A [Obafemi Awolowo Univ., Ibadan (Nigeria). Inst. of Agricultural Research and Training

    1996-07-01

    Twenty cultivars of cowpea, Vigna unguiculata, adapted to the Nigerian ecologies were screened to identify cultivars which can give high and sustainable yields when grown on soils with low available phosphorus in a sub-humid climate. Some cultivars including TVX3236, AFB1757, Ogunfowokan and K-28 gave three to four times higher grain yields than the other cultivars at zero phosphorus supply. While phosphorus application reduced grain yield in most of the cultivars with marked reduction in the higher yielding cultivars, low yielding cultivars tended to show some yield increase. Phosphorus use efficiency of the roots, stem or leaves was not significantly correlated with grain yield when 60 KgP/ha was applied. Reduction in yield due to phosphorus application might be due to induced Zn deficiency as Zn supply in these soils has been found to be inherently low. High grain yielding capacity without fertilizer phosphorus application was generally positively correlated with high vegetative shoot dry matter production. However, no clear relationship could be found between grain yield and root dry matter at maturity. It is concluded that selection for phosphorus efficiency in cowpea can substantially contribute to higher cowpea productivity and the farmers income on soils low in available phosphorus in the sub-humid areas of Nigeria. (author). 5 refs, 2 figs, 2 tabs.

  2. Anthropogenic phosphorus flow analysis of Hefei City, China

    International Nuclear Information System (INIS)

    Li Sisi; Yuan Zengwei; Bi Jun; Wu Huijun

    2010-01-01

    The substance flow analysis (SFA) method was employed to examine phosphorus flow and its connection to water pollution in the city of Hefei, China, in 2008. As human activity is the driving force of phosphorus flux from the environment to the economy, the study provides a conceptual framework for analyzing an anthropogenic phosphorus cycle that includes four stages: extraction, fabrication and manufacturing, use, and waste management. Estimates of phosphorus flow were based on existing data as well as field research, expert advice, local accounting systems, and literature. The total phosphorus input into Hefei in 2008 reached 7810 tons, mainly as phosphate ore, chemical fertilizer, pesticides, crops and animal products. Approximately 33% of the total phosphorus input left the area, and nearly 20% of that amount was discharged as waste to surface water. Effluent containing excessive fertilizer from farming operations plays an important role in phosphorus overloads onto surface water; the other major emission source is sewage discharge. We also provide suggestions for reducing phosphorus emissions, for example reducing fertilizer use, recycling farming residues, and changing human consumption patterns.

  3. Do invasive mussels restrict offshore phosphorus transport in Lake Huron?

    Science.gov (United States)

    Cha, Yoonkyung; Stow, Craig A; Nalepa, Thomas F; Reckhow, Kenneth H

    2011-09-01

    Dreissenid mussels were first documented in the Laurentian Great Lakes in the late 1980s. Zebra mussels (Dreissena polymorpha) spread quickly into shallow, hard-substrate areas; quagga mussels (Dreissena rostriformis bugensis) spread more slowly and are currently colonizing deep, offshore areas. These mussels occur at high densities, filter large water volumes while feeding on suspended materials, and deposit particulate waste on the lake bottom. This filtering activity has been hypothesized to sequester tributary phosphorus in nearshore regions reducing offshore primary productivity. We used a mass balance model to estimate the phosphorus sedimentation rate in Saginaw Bay, a shallow embayment of Lake Huron, before and after the mussel invasion. Our results indicate that the proportion of tributary phosphorus retained in Saginaw Bay increased from approximately 46-70% when dreissenids appeared, reducing phosphorus export to the main body of Lake Huron. The combined effects of increased phosphorus retention and decreased phosphorus loading have caused an approximate 60% decrease in phosphorus export from Saginaw Bay to Lake Huron. Our results support the hypothesis that the ongoing decline of preyfish and secondary producers including diporeia (Diporeia spp.) in Lake Huron is a bottom-up phenomenon associated with decreased phosphorus availability in the offshore to support primary production.

  4. Plasma Calcium and Phosphorus In Weanling Pigs as influenced by ...

    African Journals Online (AJOL)

    Twenty Yorkshire piglets, weaned at approximately 4 weeks of age, were used in this study to investigate the variations in plasma calcium and phosphorus as influenced by dietary calcium and phosphorus and 3 Cestrum diurnam. In the CCD and TCD pigs, hypercalcemia developed rapidly and persisted following the ...

  5. Evaluation of an automated struvite reactor to recover phosphorus ...

    African Journals Online (AJOL)

    In the present study we attempted to develop a reactor system to recover phosphorus by struvite precipitation, and which can be installed anywhere in the field without access to a laboratory. A reactor was developed that can run fully automated and recover up to 93% of total phosphorus (total P). Turbidity and conductivity ...

  6. Phosphorus recycling and availability in the western Wadden Sea

    NARCIS (Netherlands)

    De Freixo Leote, C.M.

    2014-01-01

    Phosphorus is a main and often limiting nutrient for phytoplankton growth, as suggested for the western Wadden Sea. In this area, freshwater discharge was a major nutrient source in the past. However, pollution reduction measures dramatically reduced its contribution, particularly for phosphorus. In

  7. The release of dissolved phosphorus from lake sediments

    NARCIS (Netherlands)

    Boers, P.C.M.

    1991-01-01

    Chapter 1. Introduction: Eutrophication is one of the world's major water quality problems. Attempts to alleviate eutrophication of lakes have involved the control of phosphorus loadings. In such cases, an internal loading of phosphorus from the sediments may

  8. Phosphorus and nitrogen in the eutrophication of waters

    International Nuclear Information System (INIS)

    Salonen, S.; Frisk, T.; Kaermeniemi, T.; Niemi, J.; Pitkaenen, H.; Silvo, K.; Vuoristo, H.

    1992-01-01

    This report is a summary of the contribution of nitrogen and phosphorus in the eutrophication process of inland and coastal waters. Special attention was paid to the mechanisms of these nutrients in regulating biological processes and to the methods available in estimating their effects in the eutrophication of water bodies. The report includes five chapters which are entitled: Introduction, which is a general background to the subject with special attention to the requirements of the Finnish Water Act. Phosphorus and nitrogen as factors regulating biological processes. The topics included are: definition of eutrophication, forms of phosphorus and nitrogen and their sources to inland and coastal waters, effects of these nutrients as growth factors of phytoplankton and macrophytes and consequences of eutrophication. Estimation of the effects of phosphorus and nitrogen. The topics discussed from the point of view of the tasks of the National Board of Waters and the Environment are: estimation of the effects of phosphorus and nitrogen in the planning and supervision of industry, fish farming, peat production, municipalities, agriculture and forestry. A brief state-of-the art of the research carried out in the National Board of Waters and the Environment is given. Methods of estimating the effects of phosphorus and nitrogen loading in waters. The topics are: relationships between phosphorus and nitrogen concentrations in waters, material balances, water quality models, classification of waters and different groups of organisms as indicators of water quality. Conclusions for the estimation of the effects of phosphorus and nitrogen in receiving waters

  9. The effects of phosphorus limitation on carbon metabolism in diatoms.

    Science.gov (United States)

    Brembu, Tore; Mühlroth, Alice; Alipanah, Leila; Bones, Atle M

    2017-09-05

    Phosphorus is an essential element for life, serving as an integral component of nucleic acids, lipids and a diverse range of other metabolites. Concentrations of bioavailable phosphorus are low in many aquatic environments. Microalgae, including diatoms, apply physiological and molecular strategies such as phosphorus scavenging or recycling as well as adjusting cell growth in order to adapt to limiting phosphorus concentrations. Such strategies also involve adjustments of the carbon metabolism. Here, we review the effect of phosphorus limitation on carbon metabolism in diatoms. Two transcriptome studies are analysed in detail, supplemented by other transcriptome, proteome and metabolite data, to gain an overview of different pathways and their responses. Phosphorus, nitrogen and silicon limitation responses are compared, and similarities and differences discussed. We use the current knowledge to propose a suggestive model for the carbon flow in phosphorus-replete and phosphorus-limited diatom cells.This article is part of the themed issue 'The peculiar carbon metabolism in diatoms'. © 2017 The Authors.

  10. Characterization of silver colloids formed in LiBbO3 by Ag and O implantation at room and elevated temperatures

    International Nuclear Information System (INIS)

    Williams, E.K.; Ila, D.; Darwish, A.; Poker, D.B.; Sarkisov, S.S.; Curley, M.J.; Wang, J.-C.; Svetchnikov, V.L.; Zandbergen, H.W.

    1999-01-01

    To address the issue of dispersion of Ag colloids in LiNbO 3 at heat treatment temperatures of 400-500 deg. C, Ag and O were implanted at energies of 160 and 35 keV, respectively, at room temperature (Rt) and at 500 deg. C. Fluences were 4x10 16 and 8x10 16 /cm 2 and the order of the Ag and O implants was varied. Electron paramagnetic resonance spectra indicated that only O followed by Ag implantation of 500 deg. C produced silver oxide. Optical absorption spectrometry and RBS showed significant differences in the dispersion of the colloids with implant temperature and implant order. Implantation of Ag at 1.5 MeV to a fluence of 2x10 16 /cm 2 followed by heat treatment at 500 deg. C for 1 h produced nonlinear optical waveguides with a nonlinear index of the order of 10 -10 cm 2 /W at 532 nm

  11. Psychological intervention following implantation of an implantable defibrillator

    DEFF Research Database (Denmark)

    Pedersen, Susanne S.; van den Broek, Krista C; Sears, Samuel F

    2007-01-01

    The medical benefits of the implantable cardioverter defibrillator (ICD) are unequivocal, but a subgroup of patients experiences emotional difficulties following implantation. For this subgroup, some form of psychological intervention may be warranted. This review provides an overview of current ...

  12. Comparison of biological and genomic characteristics between a newly isolated mink enteritis parvovirus MEV-LHV and an attenuated strain MEV-L.

    Science.gov (United States)

    Mao, Yaping; Wang, Jigui; Hou, Qiang; Xi, Ji; Zhang, Xiaomei; Bian, Dawei; Yu, Yongle; Wang, Xi; Liu, Weiquan

    2016-06-01

    A virus isolated from mink showing clinical signs of enteritis was identified as a high virulent mink enteritis parvovirus (MEV) based on its biological characteristics in vivo and in vitro. Mink, challenged with this strain named MEV-LHV, exhibited severe pathological lesions as compared to those challenged with attenuated strain MEV-L. MEV-LHV also showed higher infection and replication efficiencies in vitro than MEV-L. Sequence of the complete genome of MEV-LHV was determined and analyzed in comparison with those in GenBank, which revealed that MEV-LHV shared high homology with virulent strain MEV SD12/01, whereas MEV-L was closely related to Abashiri and vaccine strain MEVB, and belonged to a different branch of the phylogenetic tree. The genomes of the two strains differed by insertions and deletions in their palindromic termini and specific unique mutations (especially VP2 300) in coding sequences which may be involved in viral replication and pathogenicity. The results of this study provide a better understanding of the biological and genomic characteristics of MEV and identify certain regions and sites that may be involved in viral replication and pathogenicity.

  13. Management of peri-implantitis

    Directory of Open Access Journals (Sweden)

    Jayachandran Prathapachandran

    2012-01-01

    Full Text Available Peri-implantitis is a site-specific infectious disease that causes an inflammatory process in soft tissues, and bone loss around an osseointegrated implant in function. The etiology of the implant infection is conditioned by the status of the tissue surrounding the implant, implant design, degree of roughness, external morphology, and excessive mechanical load. The microorganisms most commonly associated with implant failure are spirochetes and mobile forms of Gram-negative anaerobes, unless the origin is the result of simple mechanical overload. Diagnosis is based on changes of color in the gingiva, bleeding and probing depth of peri-implant pockets, suppuration, X-ray, and gradual loss of bone height around the tooth. Treatment will differ depending upon whether it is a case of peri-implant mucositis or peri-implantitis. The management of implant infection should be focused on the control of infection, the detoxification of the implant surface, and regeneration of the alveolar bone. This review article deals with the various treatment options in the management of peri-implantitis. The article also gives a brief description of the etiopathogenesis, clinical features, and diagnosis of peri-implantitis.

  14. The study of Phosphorus distribution at Putrajaya Wetland

    Science.gov (United States)

    Mubin Zahari, Nazirul; Malek, Nur Farzana Fasiha Abdul; Fai, Chow Ming; Humaira Haron, Siti; Hafiz Zawawi, Mohd; Nazmi Ismail, Iszmir; Mohamad, Daud; Syamsir, Agusril; Sidek, Lariyah Mohd; Zakwan Ramli, Mohd; Ismail, Norfariza; Zubir Sapian, Ahmad; Noordin, Normaliza; Rahaman, Nurliyana Abdul; Muhamad, Yahzam; Mat Saman, Jarina

    2018-04-01

    This study is concerning phosphorus distribution in Putrajaya Wetland. Phosphorus is one of the important component in nutrients for living things be it aquatic or non – aquatic organisms. Total phosphorus (TP) results will give some information on the trophic status of surface water in water bodies. The focus of this study is to determine the total phosphorus concentration in Putrajaya Wetland which is in the inlet of the wetland then outlet of the wetland (Central Wetland Lake). The water sample is taken from Putrajaya Wetland and the test was conducted in the laboratory. The result from this study shows the results for total phosphorus according to month, sampling station and cells. Lowest total phosphate at the Central Wetland compare with all the wetland arms cells.

  15. STOCHASTIC MODELING OF COMPRESSIVE STRENGTH OF PHOSPHORUS SLAG CONTENT CEMENT

    Directory of Open Access Journals (Sweden)

    Ali Allahverdi

    2016-07-01

    Full Text Available One of the common methods for quick determination of compressive strength as one of the most important properties for assessment of cement quality is to apply various modeling approaches. This study is aimed at finding a model for estimating the compressive strength of phosphorus slag content cements. For this purpose, the compressive strengths of chemically activated high phosphorus slag content cement prepared from phosphorus slag (80 wt.%, Portland cement (14 wt.% and a compound chemical activator containing sodium sulfate and anhydrite (6 wt.% were measured at various Blaine finenesses and curing times. Based on the obtained results, a primary stochastic model in terms of curing time and Blaine fineness has been developed. Then, another different dataset was used to incorporate composition variable including weight fractions of phosphorus slag, cement, and activator in the model. This model can be effectively used to predict the compressive strength of phosphorus slag content cements at various Blaine finenesses, curing times, and compositions.

  16. Influence of phosphorus on point defects in an austenitic alloy

    International Nuclear Information System (INIS)

    Boulanger, L.

    1988-06-01

    The influence of phosphorus on points defects clusters has been studied in an austenitic alloy (Fe/19% at. Cr/13% at. Ni). Clusters are observed by transmission electron microscopy. After quenching and annealing, five types of clusters produced by vacancies or phosphorus-vacancies complexes are observed whose presence depends on cooling-speed. Vacancy concentration (with 3.6 10 -3 at. P) in clusters is about 10 -5 and apparent vacancy migration is 2 ± 0.1 eV. These observations suggest the formation of metastable small clusters during cooling which dissociate during annealing and migrate to create the observed clusters. With phosphorus, the unfrequent formation of vacancy loops has been observed during electron irradiation. Ions irradiations show that phosphorus does not favour nucleation of interstitial loops but slowers their growth. It reduces swelling by decreasing voids diameter. Phosphorus forms vacancy complexes whose role is to increase the recombination rate and to slow vacancy migration [fr

  17. Direct observation of thermal disorder and decomposition of black phosphorus

    Science.gov (United States)

    Yoo, Seung Jo; Kim, Heejin; Lee, Ji-Hyun; Kim, Jin-Gyu

    2018-02-01

    Theoretical research has been devoted to reveal the properties of black phosphorus as a two-dimensional nanomaterial, but little attention has been paid for the experimental characterization. In this study, the thermal disorder and decomposition of black phosphorus were examined using in situ heating transmission electron microscopy experiments. We observed that the breaking of crystallographic symmetry begins at 380 °C under vacuum condition, followed by the phosphorus evaporates after long-term heating at 400 °C. This decomposition process can be initiated by the surficial vacancy and proceeds toward both interlayer ([010]) and intralayer ([001]) directions. The results on the thermal behavior of black phosphorus provide useful guidance for thin film deposition and fabrication processes with black phosphorus.

  18. Overview of phosphorus diffusion and gettering in multicrystalline silicon

    International Nuclear Information System (INIS)

    Bentzen, A.; Holt, A.

    2009-01-01

    This paper gives an overview of phosphorus emitter diffusion and gettering as experienced in multicrystalline silicon solar cell processing. The paper gives a brief summary of the diffusion properties of phosphorus in silicon, explaining the nature behind the characteristic kink-and-tail profiles often encountered in silicon solar cells. Then, phosphorus diffusion gettering is discussed with particular focus to the inhomogeneous nature of multicrystalline silicon, and it is discussed how the abundant presence of dislocations in the areas of the material having a low recombination lifetime can cause only minor lifetime enhancements in such areas upon phosphorus diffusion. Attributed to dissociation of precipitated impurities in combination with longer effective diffusion lengths of the impurities, it is then seen that even poor areas of multicrystalline can exhibit a noticeable improvement by phosphorus diffusion gettering when applying a lower diffusion temperature for a longer duration.

  19. Black Phosphorus: Critical Review and Potential for Water Splitting Photocatalyst

    Directory of Open Access Journals (Sweden)

    Tae Hyung Lee

    2016-10-01

    Full Text Available A century after its first synthesis in 1914, black phosphorus has been attracting significant attention as a promising two-dimensional material in recent years due to its unique properties. Nowadays, with the development of its exfoliation method, there are extensive applications of black phosphorus in transistors, batteries and optoelectronics. Though, because of its hardship in mass production and stability problems, the potential of the black phosphorus in various fields is left unexplored. Here, we provide a comprehensive review of crystal structure, electronic, optical properties and synthesis of black phosphorus. Recent research works about the applications of black phosphorus is summarized. Among them, the possibility of black phosphorous as a solar water splitting photocatalyst is mainly discussed and the feasible novel structure of photocatalysts based on black phosphorous is proposed.

  20. Quantitation of phosphorus excretion in sheep by compartmental analysis

    International Nuclear Information System (INIS)

    Schneider, K.M.; Boston, R.C.; Leaver, D.D.

    1987-01-01

    The control of phosphorus excretion in sheep has been examined by constructing a kinetic model that contains a mechanistic set of connections between blood and gastrointestinal tract. The model was developed using experimental data from chaff-fed sheep and gives an accurate description of the absorption and excretion of 32 P phosphorus in feces and urine of the ruminating sheep. These results indicated the main control site for phosphorus excretion in the ruminating sheep was the gastrointestinal tract, whereas for the non-ruminating sheep fed the liquid diet, control was exerted by the kidney. A critical factor in the induction of adaptation of phosphorus reabsorption by the kidney was the reduction in salivation, and since this response occurred independently of marked changes in the delivery of phosphorus to the kidney, a humoral factor may be involved in this communication between salivary gland and kidney

  1. Recovery of phosphorus compounds from thermally-processed wastes

    Science.gov (United States)

    Czechowska-Kosacka, A.; Pawłowski, L.; Niedbala, G.; Cel, W.

    2018-05-01

    Depletion of phosphorus deposits is one of the most serious global problems, which may soon lead to a crisis in food production. It is estimated that if the current living standard is maintained, the available reserves will be depleted in 130 years. Considering the principle of sustainable development, searching for alternative phosphorus sources is extremely important. The work presented the results of the research on the possibility of utilizing wastes as a source of phosphorus. The studies were conducted on poultry manure. The physicochemical properties of phosporus-rich wastes were determined as well. The fertilizing properties of ashes from poultry manure combustion – obtained from different systems, i.e. caged and barn production. The assimilability of phosphorus from the obtained ashes was determined. Potential applications of phosphorus-rich ashes were proposed as well.

  2. Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

    Directory of Open Access Journals (Sweden)

    Jhovani Bornacelli

    2013-01-01

    Full Text Available We studied the photoluminescence (PL of Si nanocrystals (Si-NCs embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au, and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H2/N2 and Ar to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

  3. Ion implantation control system

    International Nuclear Information System (INIS)

    Gault, R. B.; Keutzer, L. L.

    1985-01-01

    A control system is disclosed for an ion implantation system of the type in which the wafers to be implanted are mounted around the periphery of a disk which rotates and also moves in a radial direction relative to an ion beam to expose successive sections of each wafer to the radiation. The control system senses beam current which passes through one or more apertures in the disk and is collected by a Faraday cup. This current is integrated to obtain a measure of charge which is compared with a calculated value based upon the desired ion dosage and other parameters. The resultant controls the number of incremental steps the rotating disk moves radially to expose the adjacent sections of each wafer. This process is continued usually with two or more traverses until the entire surface of each wafer has been implanted with the proper ion dosage

  4. Implantation for tribological applications

    International Nuclear Information System (INIS)

    Leutenecker, R.; Cao-Minh, U.; Overbeck, R.

    1992-08-01

    Empirical results on the strength enhancement of steels by N- and B-implantation should be explained from a materials science point of view. The methods applied were X-ray diffractometry and element depth profiling. The investigations of N-implanted steels focussed on the nitride formation in selected model materials and, with respect to applications, in: X90 CrMoV and S 6-5-2 tool steels, austenite X10 CrNiTi189 as well as in hard chromium plates. Main topic in B-implanted steels were the transformations: crystalline Fe-phase - amorphous Fe-B-phase - crystalline boride phases. The result is an improvement in process control by first an insight into the strength enhancing mechanisms and second in into their generation depending on the materials microstructure and the process parameter. (orig.). 101 figs., 16 tabs., 15 refs [de

  5. Dental implants: A review.

    Science.gov (United States)

    Guillaume, B

    2016-12-01

    A high number of patients have one or more missing tooth and it is estimated that one in four American subjects over the age of 74 have lost all their natural teeth. Many options exist to replace missing teeth but dental implants have become one of the most used biomaterial to replace one (or more) missing tooth over the last decades. Contemporary dental implants made with titanium have been proven safe and effective in large series of patients. This review considers the main historical facts concerned with dental implants and present the different critical factors that will ensure a good osseo-integration that will ensure a stable prosthesis anchorage. Copyright © 2016 Elsevier Masson SAS. All rights reserved.

  6. The New Nordic Diet: phosphorus content and absorption.

    Science.gov (United States)

    Salomo, Louise; Poulsen, Sanne K; Rix, Marianne; Kamper, Anne-Lise; Larsen, Thomas M; Astrup, Arne

    2016-04-01

    High phosphorus content in the diet may have adverse effect on cardiovascular health. We investigated whether the New Nordic Diet (NND), based mainly on local, organic and less processed food and large amounts of fruit, vegetables, wholegrain and fish, versus an Average Danish Diet (ADD) would reduce the phosphorus load due to less phosphorus-containing food additives, animal protein and more plant-based proteins. Phosphorus and creatinine were measured in plasma and urine at baseline, week 12 and week 26 in 132 centrally obese subjects with normal renal function as part of a post hoc analysis of data acquired from a 26-week controlled trial. We used the fractional phosphorus excretion as a measurement of phosphorus absorption. Mean baseline fractional phosphorus excretion was 20.9 ± 6.6 % in the NND group (n = 82) and 20.8 ± 5.5 % in the ADD group (n = 50) and was decreased by 2.8 ± 5.1 and 3.1 ± 5.4 %, respectively, (p = 0.6) at week 26. At week 26, the mean change in plasma phosphorus was 0.04 ± 0.12 mmol/L in the NND group and -0.03 ± 0.13 mmol/L in the ADD group (p = 0.001). Mean baseline phosphorus intake was 1950 ± 16 mg/10 MJ in the NND group and 1968 ± 22 mg/10 MJ in the ADD group and decreased less in the NND compared to the ADD (67 ± 36 mg/10 MJ and -266 ± 45 mg/day, respectively, p food concept beneficial regarding phosphorus absorption.

  7. Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions

    Energy Technology Data Exchange (ETDEWEB)

    Fekecs, André [Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, QC J1K 0A5 (Canada); Regroupement Québécois sur les Matériaux de Pointe, QC (Canada); Chicoine, Martin [Département de Physique, Université de Montréal, Montréal, QC H3C 3J7 (Canada); Regroupement Québécois sur les Matériaux de Pointe, QC (Canada); Ilahi, Bouraoui [Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, QC J1K 0A5 (Canada); SpringThorpe, Anthony J. [Canadian Photonics Fabrication Centre, National Research Council, Ottawa, ON K1A 0R6 (Canada); Schiettekatte, François [Département de Physique, Université de Montréal, Montréal, QC H3C 3J7 (Canada); Regroupement Québécois sur les Matériaux de Pointe, QC (Canada); Morris, Denis [Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, QC J1K 0A5 (Canada); Regroupement Québécois sur les Matériaux de Pointe, QC (Canada); and others

    2015-09-15

    Highlights: • InGaAsP/InP alloys were processed by MeV ion implantation and rapid thermal annealing. • X-ray diffraction and Hall measurement results are compared for several process conditions. • Amorphous layers formed at low implantation temperature. • Dynamic annealing prevented amorphization at implantation above room temperature. • After annealing near 500 °C, sheet resistivities of 10{sup 7} Ω/sq were obtained with low temperature Fe implantation. - Abstract: We report on critical ion implantation and rapid thermal annealing (RTA) process temperatures that produce resistive Fe- or Ga-implanted InGaAsP/InP heterostructures. Two InGaAsP/InP heterostructure compositions, with band gap wavelengths of 1.3 μm and 1.57 μm, were processed by ion implantation sequences done at multiple MeV energies and high fluence (10{sup 15} cm{sup −2}). The optimization of the fabrication process was closely related to the implantation temperature which influences the type of implant-induced defect structures. With hot implantation temperatures, at 373 K and 473 K, X-ray diffraction (XRD) revealed that dynamic defect annealing was strong and prevented the amorphization of the InGaAsP layers. These hot-implanted layers were less resistive and RTA could not optimize them systematically in favor of high resistivity. With cold implantation temperatures, at 83 K and even at 300 K, dynamic annealing was minimized. Damage clusters could form and accumulate to produce resistive amorphous-like structures. After recrystallization by RTA, polycrystalline signatures were found on every low-temperature Fe- and Ga-implanted structures. For both ion species, electrical parameters evolved similarly against annealing temperatures, and resistive structures were produced near 500 °C. However, better isolation was obtained with Fe implantation. Differences in sheet resistivities between the two alloy compositions were less than band gap-related effects. These observations, related

  8. Phosphorus in the feeding of pigs : effect of diet on the absorption and retention of phosphorus by growing pigs

    NARCIS (Netherlands)

    Jongbloed, A.W.

    1987-01-01

    An extensive review is given of the literature concerning phosphorus feeding of pigs. Subjects dealt with are: 1. physiological background, regulation and effect of diet composition and nutrient supply on phosphorus absorption and retention; 2. estimation of the amount of P present in the

  9. Magnifying lens for 800 MeV proton radiography

    International Nuclear Information System (INIS)

    Merrill, F. E.; Campos, E.; Espinoza, C.; Hogan, G.; Hollander, B.; Lopez, J.; Mariam, F. G.; Morley, D.; Morris, C. L.; Murray, M.; Saunders, A.; Schwartz, C.; Thompson, T. N.

    2011-01-01

    This article describes the design and performance of a magnifying magnetic-lens system designed, built, and commissioned at the Los Alamos National Laboratory (LANL) for 800 MeV flash proton radiography. The technique of flash proton radiography has been developed at LANL to study material properties under dynamic loading conditions through the analysis of time sequences of proton radiographs. The requirements of this growing experimental program have resulted in the need for improvements in spatial radiographic resolution. To meet these needs, a new magnetic lens system, consisting of four permanent magnet quadrupoles, has been developed. This new lens system was designed to reduce the second order chromatic aberrations, the dominant source of image blur in 800 MeV proton radiography, as well as magnifying the image to reduce the blur contribution from the detector and camera systems. The recently commissioned lens system performed as designed, providing nearly a factor of three improvement in radiographic resolution.

  10. XRD study of yttria stabilized zirconia irradiated with 7.3 MeV Fe, 10 MeV I, 16 MeV Au, 200 MeV Xe and 2.2 GeV Au ions

    Energy Technology Data Exchange (ETDEWEB)

    Nakano, K.; Yoshizaki, H. [Department of Materials Science, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Saitoh, Y. [Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Ishikawa, N. [Tokai Research and Development Center, Tokai-mura, Naka-gun, Ibaraki 319-1195 (Japan); Iwase, A., E-mail: iwase@mtr.osakafu-u.ac.jp [Department of Materials Science, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan)

    2016-03-01

    To simulate energetic neutron irradiation effects, yttria-stabilized zirconia (YSZ) which is one of the major materials for electrical corrosion potential sensors (ECP sensors) was irradiated with heavy ions at energies ranging from 7.3 MeV to 2.2 GeV. Ion irradiation effects on the lattice structure were analyzed using the X-ray diffraction (XRD). The increase in lattice constant was induced by the ion irradiation. It was dominated by the elastic collision process and not by the electronic excitation process. The lattice disordering which was observed as a broadening of XRD peaks was also induced by the irradiation especially for 200 MeV Xe ion irradiation. The present result suggests that the expansion and/or the disordering of YSZ lattice induced by energetic neutrons may affect the durability of a joint interface between a metal housing and YSZ membrane for the usage of ECP sensors in nuclear power reactors.

  11. Parity violation in proton-proton scattering at 230 MEV

    International Nuclear Information System (INIS)

    Birchall, J.; Bowman, J.D.; Davis, C.A.

    1988-01-01

    Below /similar to/300 MeV six meson-nucleon coupling strengths are required to describe the weak interaction of nucleons. Many experiments have found parity-violating effects in nuclear systems, but only four significant, independent constraints exist. A new measurement is proposed where measurable effects are predicted with minimal dependence on nuclear interaction models, yielding information complementary to previous results. This is a measurement of the parity-violating analyzing power. A/sub z/ in p-p scattering at 230 MeV, which is shown to be sensitive to the weak rho-nucleon coupling. This measurement, at a precision of +- 2 x 10/sup -8/, together with a proposed measurement by the University of Washington group at I.L.L. of the parity-violating neutron spin rotation, will provide the fifth and sixth independent constraints needed to determine the weak meson-nucleon coupling constants

  12. Tritium production in thorium by 135 MeV protons

    International Nuclear Information System (INIS)

    Lefort, M.; Simonoff, G.; Tarrago, X.; Bibron, R.

    1960-01-01

    We have measured the cross-section of tritium production by bombardment of thorium by 135 MeV protons in the Orsay synchro-cyclotron. The tritium was separated from the targets by heating in a graphite crucible with a high-frequency generator, under hydrogen gas pressure. Tritiated water was synthesised and the tritium was measured with liquid scintillator. A value of 19.5 ± 0.05 mbarns was obtained for the tritium-cross section and ten percent of tritons have energies higher than 35 MeV. This large cross-section is attributed to a double pick-up process. Reprint of a paper published in Le Journal de Physique et le Radium, t. 20, p. 959, dec 1959 [fr

  13. Tribology of implantation bilayers

    International Nuclear Information System (INIS)

    Pivin, J.C.

    1989-01-01

    The mechanical behaviour of implantation films must be analysed in terms of bilayer rheology (laws of mechanical behaviour). Tribology takes into account thermodynamical, chemical and metallurgical parameters to interpret the friction properties of a system as a whole. One can distinguish between alloying effects of ion implantation and structural modifications. Alloying affects the basic properties of the crystal: elasticity, cohesion, mobility of planar defects, and its surface electronic structure, which determines the reactivity with the atmosphere or the friction counterpart (adhesion). Radiation damage and phase changes act more particularly on the modes of gliding and climbing of dislocations, and fracture mechanisms. 105 refs.; 11 figs.; 1 table

  14. [Tinnitus and implants].

    Science.gov (United States)

    Despreaux, G; Tison, P; Van Den Abbeele, T; Moine, A; Frachet, B

    1990-01-01

    The experience with cochlear implantation at Avicenne hospital prompted us to carry out a retrospective study on tinnitus in a population of operated patients. Improvement or disappearance of the symptoms was noted in all cases. These results, which partly match those found in the literature, are probably produced by rehabilitation inhibiting the "deafferentation" mechanisms in analogy with pain phenomena. In some precise cases, which are described, they led us to proposing implantation even though the main, if not sole, complaint of the patient was tinnitus.

  15. Operation of the Brookhaven 200 MeV Linac

    International Nuclear Information System (INIS)

    Fewell, N.M.; LoDestro, V.

    1979-01-01

    During the past three years the 200 MeV linear accelerator has continued to operate at a high level of performance and reliability. The linac output beam current has been limited to 60 mA in order to obtain the maximum rf power tube life without compromising the output performance of the AGS. Despite a reduction in pulse repetition rate, total beam current to the BLIP facility has increased to an average of 300 mA hours/year

  16. Construction of 35 MeV DSM at Nihon University

    International Nuclear Information System (INIS)

    Hayakawa, K.; Sato, K.; Tanaka, T.; Takeda, O.

    1988-01-01

    High quality electron beam is needed for the excitation of the free electron laser(FEL). Construction of the 35 MeV double-sided microtron for the FEL has been started at 1984. This accelerator will feed a electron beam which has narrow energy width and low emittance. A first one turn beam line has been completed. Beam accelerating experiments and high power microwave tests are performed. (author)

  17. Thermal Dark Matter Below an MeV

    OpenAIRE

    Berlin, Asher; Blinov, Nikita

    2017-01-01

    We consider a class of models in which thermal dark matter is lighter than an MeV. If dark matter thermalizes with the Standard Model below the temperature of neutrino-photon decoupling, equilibration and freeze-out cools and heats the Standard Model bath comparably, alleviating constraints from measurements of the effective number of neutrino species. We demonstrate this mechanism in a model consisting of fermionic dark matter coupled to a light scalar mediator. Thermal dark matter can be as...

  18. High resolution 14 MeV neutron spectrometer

    International Nuclear Information System (INIS)

    Pillon, M.

    1986-01-01

    A neutron spectrometer, based both on the track position identification and the energy measurement of recoiling protons from a hydrogenous radiator is proposed. The expected performance limits of this spectrometer with regard to energy resolution (deltaE/E), efficiency (epsilon) and counting rate are evaluated in five different configurations. The results show the possibility of deriving an optimized spectrometer design for applications on large fusion devices such as JET and NET with an energy resolution up 1% at 14 MeV

  19. Evolution of the 400 MeV linac design

    International Nuclear Information System (INIS)

    MacLachlan, J.A.

    1987-01-01

    The basic premises of the conceptual design for the linac upgrade are pursued to establish lengths, gradients, power dissipation, etc., for the 400 MeV linac and matching section. The discussion is limited to accelerating and focusing components. Wherever values depend on the choice of the accelerating structure, the disk-and-washer structure is emphasized; the results are generally relevant to the side coupled cavity choice also

  20. 70 MeV injector auto tuning system handbook

    International Nuclear Information System (INIS)

    Ellis, J.E.; Munn, R.W.; Sandels, E.G.

    1976-06-01

    The handbook is in three sections: (1) description and location; (2) operating instructions; and (3) design notes on the tank and debuncher auto tuning systems for the 70 MeV injector. The purpose of the auto tuning system is to maintain the 'tune' of the four tanks and debuncher to within a few Hz, stabilizing against changes of temperature and other physical factors affecting the resonant frequency of the tanks. (U.K.)