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Sample records for mev ion irradiation

  1. Si-nanoparticle synthesis using ion implantation and MeV ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Chulapakorn, T.; Wolff, M.; Primetzhofer, D.; Possnert, G. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J. [Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden); Hallen, A. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

    2015-12-15

    A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO{sub 2} matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO{sub 2} by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV {sup 127}I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Structural, thermal and optical behavior of 84 MeV oxygen and 120 MeV silicon ions irradiated PES

    International Nuclear Information System (INIS)

    Samra, Kawaljeet Singh; Thakur, Sonika; Singh, Lakhwant

    2011-01-01

    In order to study structural, thermal and optical behavior, thin flat samples of polyethersulfone were irradiated with oxygen and silicon ions. The changes in properties were analyzed using different techniques viz: X-ray diffraction, thermo-gravimetric analysis, Fourier transform infrared, UV-visible and photoluminescence spectroscopy. A noticeable increase in the intensity of X-ray diffraction peaks was observed after irradiation with 84 MeV oxygen ions at low and medium fluences, which may be attributed to radiation-induced cross-linking in polymer. Fourier transform infrared and thermo-gravimetric analysis corroborated the results of X-ray diffraction analysis. No noticeable change in the Fourier transform infrared spectra of oxygen ion irradiated polyethersulfone were observed even at the highest fluence of 1 x 10 13 ions cm -2 , but after irradiation with silicon ions, a reduction in intensity of almost all characteristic bands was revealed. An increase in the activation energy of decomposition of polyethersulfone was observed after irradiation with 84 MeV oxygen ions up to medium fluences but degradation was revealed at higher fluences. Similar trends were observed by photoluminescence analysis.

  3. Anisotropic deformation of metallo-dielectric core-shell colloids under MeV ion irradiation

    International Nuclear Information System (INIS)

    Penninkhof, J.J.; Dillen, T. van; Roorda, S.; Graf, C.; Blaaderen, A. van; Vredenberg, A.M.; Polman, A.

    2006-01-01

    We have studied the deformation of metallo-dielectric core-shell colloids under 4 MeV Xe, 6 and 16 MeV Au, 30 MeV Si and 30 MeV Cu ion irradiation. Colloids of silica surrounded by a gold shell, with a typical diameter of 400 nm, show anisotropic plastic deformation under MeV ion irradiation, with the metal flowing conform the anisotropically deforming silica core. The 20 nm thick metal shell imposes a mechanical constraint on the deforming silica core, reducing the net deformation strain rate compared to that of pure silica. In colloids consisting of a Au core and a silica shell, the silica expands perpendicular to the ion beam, while the metal core shows a large elongation along the ion beam direction, provided the silica shell is thick enough (>40 nm). A minimum electronic energy loss of 3.3 keV/nm is required for shape transformation of the metal core. Silver cores embedded in a silica shell show no elongation, but rather disintegrate. Also in planar SiO 2 films, Au and Ag colloids show entirely different behavior under MeV irradiation. We conclude that the deformation model of core-shell colloids must include ion-induced particle disintegration in combination with thermodynamical effects, possibly in combination with mechanical effects driven by stresses around the ion tracks

  4. Anisotropic deformation of metallo-dielectric core shell colloids under MeV ion irradiation

    Science.gov (United States)

    Penninkhof, J. J.; van Dillen, T.; Roorda, S.; Graf, C.; van Blaaderen, A.; Vredenberg, A. M.; Polman, A.

    2006-01-01

    We have studied the deformation of metallo-dielectric core-shell colloids under 4 MeV Xe, 6 and 16 MeV Au, 30 MeV Si and 30 MeV Cu ion irradiation. Colloids of silica surrounded by a gold shell, with a typical diameter of 400 nm, show anisotropic plastic deformation under MeV ion irradiation, with the metal flowing conform the anisotropically deforming silica core. The 20 nm thick metal shell imposes a mechanical constraint on the deforming silica core, reducing the net deformation strain rate compared to that of pure silica. In colloids consisting of a Au core and a silica shell, the silica expands perpendicular to the ion beam, while the metal core shows a large elongation along the ion beam direction, provided the silica shell is thick enough (>40 nm). A minimum electronic energy loss of 3.3 keV/nm is required for shape transformation of the metal core. Silver cores embedded in a silica shell show no elongation, but rather disintegrate. Also in planar SiO2 films, Au and Ag colloids show entirely different behavior under MeV irradiation. We conclude that the deformation model of core-shell colloids must include ion-induced particle disintegration in combination with thermodynamical effects, possibly in combination with mechanical effects driven by stresses around the ion tracks.

  5. Large scale silver nanowires network fabricated by MeV hydrogen (H+) ion beam irradiation

    International Nuclear Information System (INIS)

    S, Honey; S, Naseem; A, Ishaq; M, Maaza; M T, Bhatti; D, Wan

    2016-01-01

    A random two-dimensional large scale nano-network of silver nanowires (Ag-NWs) is fabricated by MeV hydrogen (H + ) ion beam irradiation. Ag-NWs are irradiated under H +  ion beam at different ion fluences at room temperature. The Ag-NW network is fabricated by H + ion beam-induced welding of Ag-NWs at intersecting positions. H +  ion beam induced welding is confirmed by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Moreover, the structure of Ag NWs remains stable under H +  ion beam, and networks are optically transparent. Morphology also remains stable under H +  ion beam irradiation. No slicings or cuttings of Ag-NWs are observed under MeV H +  ion beam irradiation. The results exhibit that the formation of Ag-NW network proceeds through three steps: ion beam induced thermal spikes lead to the local heating of Ag-NWs, the formation of simple junctions on small scale, and the formation of a large scale network. This observation is useful for using Ag-NWs based devices in upper space where protons are abandoned in an energy range from MeV to GeV. This high-quality Ag-NW network can also be used as a transparent electrode for optoelectronics devices. (paper)

  6. XRD study of yttria stabilized zirconia irradiated with 7.3 MeV Fe, 10 MeV I, 16 MeV Au, 200 MeV Xe and 2.2 GeV Au ions

    Energy Technology Data Exchange (ETDEWEB)

    Nakano, K.; Yoshizaki, H. [Department of Materials Science, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Saitoh, Y. [Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Ishikawa, N. [Tokai Research and Development Center, Tokai-mura, Naka-gun, Ibaraki 319-1195 (Japan); Iwase, A., E-mail: iwase@mtr.osakafu-u.ac.jp [Department of Materials Science, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan)

    2016-03-01

    To simulate energetic neutron irradiation effects, yttria-stabilized zirconia (YSZ) which is one of the major materials for electrical corrosion potential sensors (ECP sensors) was irradiated with heavy ions at energies ranging from 7.3 MeV to 2.2 GeV. Ion irradiation effects on the lattice structure were analyzed using the X-ray diffraction (XRD). The increase in lattice constant was induced by the ion irradiation. It was dominated by the elastic collision process and not by the electronic excitation process. The lattice disordering which was observed as a broadening of XRD peaks was also induced by the irradiation especially for 200 MeV Xe ion irradiation. The present result suggests that the expansion and/or the disordering of YSZ lattice induced by energetic neutrons may affect the durability of a joint interface between a metal housing and YSZ membrane for the usage of ECP sensors in nuclear power reactors.

  7. A comparative study of 30MeV boron4+ and 60MeV oxygen8+ ion irradiated Si NPN BJTs

    International Nuclear Information System (INIS)

    Kumar, M. Vinay; Krishnaveni, S.; Yashoda, T.; Dinesh, C. M.; Krishnakumar, K. S.; Jayashree, B.; Ramani

    2015-01-01

    The impact of 30MeV boron 4+ and 60MeV oxygen 8+ ion irradiation on electrical characteristics of 2N3773 Si NPN Bipolar junction transistors (BJTs) is reported in the present study. The transistors were decapped and irradiated at room temperature. Gummel characteristics, DC current gain and Capacitance-voltage (C-V) characteristics were studied before and after irradiation at different fluences. DC current gain has decreased significantly in both boron and oxygen ion irradiation. Also the value of capacitance decreased 3-4 times with increase in fluence. Both 30MeV boron ion and 60MeV oxygen ion induced similar extent of degradation in electrical characteristics of the transistor

  8. Anti-biofilm efficacy of 100 MeV gold ion irradiated polycarbonate against Salmonella typhi

    Science.gov (United States)

    Joshi, R. P.; Hareesh, K.; Bankar, A.; Sanjeev, G.; Asokan, K.; Kanjilal, D.; Dahiwale, S. S.; Bhoraskar, V. N.; Dhole, S. D.

    2017-12-01

    Polycarbonate (PC) films were irradiated by 100 MeV gold (Au7+) ions and characterized to study changes in its optical, chemical, surface morphology and thermal properties. UV-Visible spectroscopic results revealed the decrease in the optical band gap of PC after ion irradiation due to chain scission mainly at the carbonyl group which is corroborated by Fourier Transform Infrared spectroscopic results. X-ray diffractogram study showed decrease in crystallinity of PC film after irradiation. Scanning electron microscopic results showed the micropores formation in PC which results in surface roughening. Differential scanning calorimetric results revealed decrease in glass transition temperature indicating the decrease in molecular weight of PC corroborated by rheometric studies. PC films irradiated by 100 MeV Au7+ ions showed increased anti-biofilm activity against the human pathogen, Salmonella typhi (S. typhi). Morphology of S. typhi was changed due to stress of Au7+ irradiated PC. Cells length was increased with increasing fluences. The average cell length, cell volume and surface area was increased significantly (PBiofilm formation was inhibited ≈ 20% at lower fluence and 96% at higher fluence, which observed to be enhanced anti-biofilm activity in Au7+ irradiated PC.

  9. Contrast of dry and water-saturated arabidopsis seeds irradiated by MeV energy ions

    International Nuclear Information System (INIS)

    Mei Tao; Qin Huaili; Xue Jianming; Wang Yugang

    2007-01-01

    The dry and water-saturated seeds of Arabidopsis thaliana were irradiated by H + ions with 6.5 MeV in atmosphere. The ion fluence used in this experiment was in the range of 4 x 10 9 -1 x 10 14 ions/cm 2 . According to the structure of the seed and TRIM simulation, the ions with the energy of 6.5 MeV can penetrate the whole seed. The experiment shows that the fluence-response curves for the dry seeds and water-saturated seeds had distinct shoulders and reduced rapidly. The experimental results show that the water-imbibed seeds were more sensitive than the dry seeds and the reason is from free radicals reaction. A model has been constructed, and primely simulates the experiment data. (authors)

  10. 130 MeV Au ion irradiation induced dewetting on In2Te3 thin film

    International Nuclear Information System (INIS)

    Matheswaran, P.; Abhirami, K.M.; Gokul, B.; Sathyamoorthy, R.; Prakash, Jai; Asokan, K.; Kanjilal, D.

    2012-01-01

    Highlights: ► In 2 Te 3 phase formed from In/Te bilayer by 130 MeV Au ion irradiation. ► Lower fluence results mixed phases with initial state of dewetting. ► At higher fluence, In 2 Te 3 phase with complete dewetting pattern is formed. ► Thermal spike model is used to explain the inter face mixing phenomena. ► SHI irradiation may be used to functionalize the structural and surface properties of thin films. - Abstract: In/Te bilayer thin films were prepared by sequential thermal evaporation and subsequently irradiated by 130 MeV Au ions. The pristine and irradiated samples were characterized by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) techniques. RBS spectra reveal the sputtering of Te film and interface mixing, with increasing fluence. The surface morphology showed the beginning of dewetting of Te thin film and formation of the partially connected with the mixed zones at the fluence of 1 × 10 13 ions/cm 2 . At the higher fluence of 3 × 10 13 ions/cm 2 , dewetted structures were isolated at the surface. Above results are explained based on the formation of craters, sputtering and dewetting followed by inter-diffusion at the interface of molten zones due to thermal spike induced by Au ions.

  11. GXRD study of 100 MeV Fe9+ ion irradiated indium phosphide

    International Nuclear Information System (INIS)

    Dubey, R.L.; Dubey, S.K.; Kachhap, N.K.; Kanjilal, D.

    2014-01-01

    Swift heavy ions with MeV to GeV kinetic energy offer unique possibilities of modifying material properties. Each projectile passing through the target material causes loss of its energy by ion-electrons and ion-atoms interaction with the target material. The consequence of formal one is to change in surface properties and latter to produces damage deep in the target material near the projected range of projectile. In the present work, indium phosphide samples were irradiated at 100 MeV 56 Fe 9+ ions with different fluences varying from 1x10 12 to 1x10 14 ions cm -2 using the 15UD Pelletron facilities at Inter University Accelerator Centre (IUAC), New Delhi. Grazing angle X-ray diffraction technique was used to investigate the structural properties of irradiated indium phosphide at different depths. The GXRD spectra of non-irradiated and irradiated samples were recorded at different grazing angle i.e 1°, 2°, 3°, 4° and 5° to get the structural information over the projected range. The detailed result will be presented and discussed in the conference. (author)

  12. 75 MeV boron ion irradiation studies on Si PIN photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Prabhakara Rao, Y.P.; Praveen, K.C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India); Rejeena Rani, Y. [Integrated Circuits Division, Bharat Electronics Limited, Bangalore 560013, Karnataka (India); Tripathi, Ambuj [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gnana Prakash, A.P., E-mail: gnanap@hotmail.com [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India)

    2013-12-01

    The highly sensitive silicon PIN photodiodes were fabricated to use in radiation environments. The Si PIN photodiodes are coated with 150 nm silicon dioxide (SiO{sub 2}) as anti-reflective (AR) coating. The presence of AR coating on the performance of irradiated PIN photodiodes is studied up to a total dose of 10 Mrad. The effects of 75 MeV boron (B{sup 5+}) ions and {sup 60}Co gamma radiation on the I–V, C–V and spectral responses of PIN photodiodes were studied systematically to understand the radiation tolerance of the devices. The 75 MeV B{sup 5+} irradiation results are compared with {sup 60}Co gamma irradiated results in the same dose range for 1 mm × 1 mm and 10 mm × 10 mm active area PIN photodiodes. The irradiation results show that the ion irradiated PIN photodiodes show more degradation when compared {sup 60}Co gamma irradiated devices. The irradiation results are presented in this paper and the possible mechanism behind the degradation of photodiodes is also discussed in the paper.

  13. Investigations on 40 MeV Li3+ ions irradiated GaN epilayers

    International Nuclear Information System (INIS)

    Suresh Kumar, V.; Kumar, J.; Kanjilal, D.; Asokan, K.; Mohanty, T.; Tripathi, A.; Rossi, Francisca; Zappettini, A.; Lazzarani, L.; Ferrari, C.

    2008-01-01

    The Metal Organic Chemical Vapour Deposition (MOCVD) grown n-type Gallium nitride (GaN) layers on sapphire (0 0 0 1) substrates have been irradiated at low and room temperatures with 40 MeV Li 3+ ions at the fluence of 1 x 10 13 ions cm -2 . Irradiated samples were characterised by using X-ray diffraction (XRD), photoluminescence (PL), Raman spectroscopy and atomic force microscopy (AFM). XRD results show that the formation of Ga 2 O 3 has been observed upon irradiation. This is due to interface mixing of GaN/Al 2 O 3 , at both temperatures. Also the GaN (0 0 0 2) peak splits into two at low temperature irradiation. PL measurements show a yellow emission band shift towards blue band side upon irradiation at 77 K. Raman studies indicate that the lattice disorder is high at room temperature irradiation compared to low temperature irradiation. AFM images indicate the increasing surface roughness after ion irradiation at room temperature when compared to pristine GaN and low temperature irradiated GaN. These observations are discussed in detail with the use of complementary techniques

  14. Magnetic properties of a stainless steel irradiated with 6 MeV Xe ions

    Science.gov (United States)

    Xu, Chaoliang; Liu, Xiangbing; Qian, Wangjie; Li, Yuanfei

    2017-11-01

    Specimens of austenitic stainless steel were irradiated with 6 MeV Xe ions at room temperature to 2, 7, 15 and 25 dpa. The vibrating sample magnetometer (VSM), grazing incidence X-ray diffraction (GIXRD) and positron annihilation lifetime spectroscopy (PLS) were carried out to analysis the magnetic properties and microstructural variations. The magnetic hysteresis loops indicated that higher irradiation damage causes more significant magnetization phenomenon. The equivalent saturated magnetization Mes and coercive force Hc were obtained from magnetic hysteresis loops. It is indicated that the Mes increases with irradiation damage. While Hc increases first to 2 dpa and then decreases continuously with irradiation damage. The different contributions of irradiation defects and ferrite precipitates on Mes and Hc can explain these phenomena.

  15. Enhanced photoelectrochemical properties of 100 MeV Si8+ ion irradiated barium titanate thin films

    International Nuclear Information System (INIS)

    Solanki, Anjana; Choudhary, Surbhi; Satsangi, Vibha R.; Shrivastav, Rohit; Dass, Sahab

    2013-01-01

    Highlights: ► Effect of 100 MeV Si 8+ ion irradiation on photoelectrochemical (PEC) properties of BaTiO 3 thin films was studied. ► Films were deposited on Indium doped Tin Oxide (ITO) coated glass by sol–gel spin coating technique. ► Optimal irradiation fluence for best PEC response was 5 × 10 11 ion cm −2 . ► Maximum photocurrent density was observed to be 0.7 mA cm −2 at 0.4 V/SCE. ► Enhanced photo-conversion efficiency was due to maximum negative flatband potential, donor density and lowest resistivity. -- Abstract: Effects of high electronic energy deposition on the structure, surface topography, optical property and photoelectrochemical behavior of barium titanate (BaTiO 3 ) thin films were investigated by irradiating films with 100 MeV Si 8+ ions at different ion fluences in the range of 1 × 10 11 –2 × 10 13 ions cm −2 . BaTiO 3 thin films were deposited on indium tin oxide coated glass substrate by sol gel spin coating method. Irradiation induced modifications in the films were analyzed using the results from XRD, SEM, cross sectional SEM, AFM and UV–Vis spectrometry. Maximum photocurrent density of 0.7 mA cm −2 at 0.4 V/SCE and applied bias hydrogen conversion efficiency (ABPE) of 0.73% was observed for BaTiO 3 film irradiated at 5 × 10 11 ions cm −2 , which can be attributed to maximum negative value of the flatband potential and donor density and lowest resistivity

  16. Effects of high energy (MeV) ion beam irradiation on polyethylene terephthalate

    International Nuclear Information System (INIS)

    Singh, Nandlal; Sharma, Anita; Avasthi, D.K.

    2003-01-01

    Irradiation effects of 50 MeV Li 3+ ion beams in polyethylene terephthalate (PET) films were studied with respect to their structural and electrical properties by using Fourier transform infrared (FTIR) spectroscopy and ac electrical measurement in the frequency range: 50-100 kHz at different temperatures of 30-150 deg. C. It is found that ac resistivity of PET decreases as frequency increases. The temperature dependencies of dielectric loss tangent exhibit a peak (T g ) at 60 deg. C. The capacitance value of irradiated PET is almost temperature independent and ones increases with an increasing of lithium fluence. FTIR spectra show various bands related to C-H, C-O, C-O-C molecular bonds and groups which get modified or break down due to ion beam irradiation

  17. Structure Characterization of Modified Polyimide Films Irradiated by 2 MeV Si Ions

    International Nuclear Information System (INIS)

    Tian-Xiang, Chen; Shu-De, Yao; Kun, Wang; Huan, Wang; Zhi-Bo, Ding; Di, Chen

    2009-01-01

    Structures of polyimide (6051) films modified by irradiation of 2.0 MeV Si ions with different fluences are studied in detail. Variations of the functional groups in polyimide are investigated by attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) and Raman spectroscopy. The results indicate that the functional groups can be destroyed gradually with the increasing ion fluence. The variations of structure and element contents are characterized by x-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and x-ray photoelectron spectroscopy (XPS). The results indicate that the contents of N and O decrease significantly compared with the original samples, some graphite-like and carbon-rich phases are formed in the process of irradiation

  18. Fluctuation Induced Conductivity Studies of 100 MeV Oxygen Ion Irradiated Pb Doped Bi-2223 Superconductors

    NARCIS (Netherlands)

    Banerjee, Tamalika; Kumar, Ravi; Kanjilal, D.; Ramasamy, S.

    2000-01-01

    We report on 100 MeV oxygen ion irradiation in Pb doped Bi-2223 superconductors. Resistivity measurements reveal that both grains as well as the grain boundaries are affected by such irradiation. An analysis of the excess conductivity has been made within the framework of Aslamazov-Larkin (AL) and

  19. Depth distribution of carrier lifetime in 65 MeV oxygen ion irradiated silicon wafers

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.S. [Ecotopia Science Institute, Division of Energy Science, Nagoya University, Nagoya (Japan); Dahiwale, S.S. [Department of Physics, University of Pune, Pune 411 007 (India); Kanjilal, D. [Nuclear Science Centre, New Delhi (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411 007 (India); Dhole, S.D. [Department of Physics, University of Pune, Pune 411 007 (India)]. E-mail: sanjay@physics.unipune.ernet.in

    2006-03-15

    CZ-grown, n-doped crystalline Si(1 1 1) of resistivity 60 {omega} cm and 140 {omega} cm were irradiated with 65 MeV energy oxygen ions, in the fluence range of 2 x 10{sup 1}-10{sup 14} ions/cm{sup 2}. The depth and spatial profile of excess minority carrier recombination time {tau} (lifetime) was measured using photoconductive decay (PCD) method. Lifetime measurements were carried out before the stopping range of impinging ions. Results show a monotonous decrease in lifetime with fluence, which is attributed to defect creation mechanism by electronic energy loss based on the thermal spike model. Also, surface modification is expected with a small loss in crystalline quality. This surface is considered to be a multi-crystalline surface with large grain boundaries that act as trapping sites for excess holes in n-Si(1 1 1). Annealing of the irradiated samples showed a near complete recovery at 750 deg. C for a period of 1 h.

  20. High energy (MeV) ion-irradiated π-conjugated polyaniline: Transition from insulating state to carbonized conducting state

    International Nuclear Information System (INIS)

    Park, S.K.; Lee, S.Y.; Lee, C.S.; Kim, H.M.; Joo, J.; Beag, Y.W.; Koh, S.K.

    2004-01-01

    High energy (MeV) C 2+ , F 2+ , and Cl 2+ ions were irradiated onto π-conjugated polyaniline emeraldine base (PAN-EB) samples. The energy of an ion beam was controlled to a range of 3-4.5 MeV, with the ion dosage varying from 1x10 12 to 1x10 16 ions/cm 2 . The highest dc conductivity (σ dc ) at room temperature was measured to be ∼60 S/cm for 4.5 MeV Cl 2+ ion-irradiated PAN-EB samples with a dose of 1x10 16 ions/cm 2 . We observed the transition of high energy ion-irradiated PAN-EB samples from insulating state to conducting state as a function of ion dosage based on σ dc and its temperature dependence. The characteristic peaks of the Raman spectrum of the PAN-EB samples were reduced, while the D-peak (disordered peak) and the G peak (graphitic peak) appeared as the ion dose increased. From the analysis of the D and G peaks of the Raman spectra of the systems compared to multiwalled carbon nanotubes, ion-irradiated graphites, and annealed carbon films, the number of the clusters of hexagon rings with conducting sp 2 -bonded carbons increased with ion dosage. We also observed the increase in the size of the nanocrystalline graphitic domain of the systems with increasing ion dosage. The intensity of normalized electron paramagnelic resonance signal also increased in correlation with ion dose. The results of this study demonstrate that π-conjugated pristine PAN-EB systems changed from insulating state to carbonized conducting state through high energy ion irradiation with high ion dosage

  1. Photoluminescence and photoluminescence excitation studies in 80 MeV Ni ion irradiated MOCVD grown GaN

    Energy Technology Data Exchange (ETDEWEB)

    Devaraju, G. [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Pathak, A.P., E-mail: appsp@uohyd.ernet.in [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Srinivasa Rao, N.; Saikiran, V. [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Enrichi, Francesco [Coordinamento Interuniversitario Veneto per le Nanotecnologie (CIVEN), via delle Industrie 5, Marghera, I-30175Venice (Italy); Trave, Enrico [Dipartimento di Chimica Fisica, Universita Ca' Foscari Venezia, Dorsoduro 2137, I-30123 Venice (Italy)

    2011-09-01

    Highlights: {yields} MOCVD grown GaN samples are irradiated with 80 MeV Ni ions at room temperature. {yields} PL and PLE studies have been carried out for band to band, BL and YL emissions. {yields} Ni ions irradiated GaN shows BL band at 450 nm besides YL band. {yields} Radiation annealed Ga vacancies have quenching effect on YL intensity. {yields} We speculated that BL and YL are associated with N and Ga vacancies, respectively. - Abstract: We report damage creation and annihilation under energetic ion bombardment at a fixed fluence. MOCVD grown GaN thin films were irradiated with 80 MeV Ni ions at a fluence of 1 x 10{sup 13} ions/cm{sup 2}. Irradiated GaN thin films were subjected to rapid thermal annealing for 60 s in nitrogen atmosphere to anneal out the defects. The effects of defects on luminescence were explored with photoluminescence measurements. Room temperature photoluminescence spectra from pristine sample revealed presence of band to band transition besides unwanted yellow luminescence. Irradiated GaN does not show any band to band transition but there is a strong peak at 450 nm which is attributed to ion induced defect blue luminescence. However, irradiated and subsequently annealed samples show improved band to band transitions and a significant decrease in yellow luminescence intensity due to annihilation of defects which were created during irradiation. Irradiation induced effects on yellow and blue emissions are discussed.

  2. 160 MeV Ni12+ ion irradiation effects on the dielectric properties of polyaniline nanotubes

    International Nuclear Information System (INIS)

    Hazarika, J.; Nath, Chandrani; Kumar, A.

    2012-01-01

    We report on the dielectric properties and a.c. conductivity studies of CSA doped polyaniline nanotubes. Nanotubes of 47–100 nm diameter, were synthesized by the self-assembly method and irradiated using Ni 12+ ions of 160 MeV energy with fluences of 1 × 10 10 , 5 × 10 10 , 1 × 10 11 and 3 × 10 11 ions/cm 2 . X-ray diffraction studies reveal an increase in the degree of crystallinity and consequently, the extent of order of the nanotubes with increasing fluence, but show a lower degree of crystallinity at higher fluence. The decrease in d-spacing for the (100) reflections with fluence is ascribed to the decrease in the tilt angle of the aligned polymer chains. A significant change was seen after irradiation in dielectric and electrical properties which may be correlated with the increased carrier concentration and structural modifications in the polymer films. The surface conductivity of films increases with increasing fluence, which also decreases at higher fluence. The a.c. conduction mechanism for the nanotubes could be explained in terms of correlated barrier hopping model. The existence of polarons as the major charge carriers in the present nanotube system was confirmed by the low values of polaron binding energy, found to decrease with fluence. The hopping distance increases with fluence indicating that the hopping probability increases with fluence.

  3. ion irradiation

    Indian Academy of Sciences (India)

    Swift heavy ions interact predominantly through inelastic scattering while traversing any polymer medium and produce excited/ionized atoms. Here samples of the polycarbonate Makrofol of approximate thickness 20 m, spin coated on GaAs substrate were irradiated with 50 MeV Li ion (+3 charge state). Build-in ...

  4. MeV single-ion beam irradiation of mammalian cells using the Surrey vertical nanobeam, compared with broad proton beam and X-ray irradiations

    Energy Technology Data Exchange (ETDEWEB)

    Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Jeynes, J.C.G.; Merchant, M.J.; Kirkby, K.; Kirkby, N. [Surrey Ion Beam Center, Faculty of Engineering and Physical Science, University of Surrey, Guildford Surrey, GU2 7XH (United Kingdom); Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2013-07-15

    Highlights: •Recently completed nanobeam at the Surrey Ion Beam Centre was used. •3.8-MeV single and broad proton beams irradiated Chinese hamster cells. •Cell survival curves were measured and compared with 300-kV X-ray irradiation. •Single ion irradiation had a lower survival part at ultra-low dose. •It implies hypersensitivity, bystander effect and cell cycle phase of cell death. -- Abstract: As a part of a systematic study on mechanisms involved in physical cancer therapies, this work investigated response of mammalian cells to ultra-low-dose ion beam irradiation. The ion beam irradiation was performed using the recently completed nanobeam facility at the Surrey Ion Beam Centre. A scanning focused vertical ion nano-beam was applied to irradiate Chinese hamster V79 cells. The V79 cells were irradiated in two different beam modes, namely, focused single ion beam and defocused scanning broad ion beam of 3.8-MeV protons. The single ion beam was capable of irradiating a single cell with a precisely controlled number of the ions to extremely low doses. After irradiation and cell incubation, the number of surviving colonies as a function of the number of the irradiating ions was measured for the cell survival fraction curve. A lower survival for the single ion beam irradiation than that of the broad beam case implied the hypersensitivity and bystander effect. The ion-beam-induced cell survival curves were compared with that from 300-kV X-ray irradiation. Theoretical studies indicated that the cell death in single ion irradiation mainly occurred in the cell cycle phases of cell division and intervals between the cell division and the DNA replication. The success in the experiment demonstrated the Surrey vertical nanobeam successfully completed.

  5. EPR and cathodoluminescence of defects in diamond irradiated by nickel ions with energy of 335 MeV

    International Nuclear Information System (INIS)

    Varichenko, V.S.; Martinovich, V.A.; Filipp, A.Z.; Didyk, A.Yu.

    1995-01-01

    Defect production in natural diamond irradiated by 335 MeV Ni ions within a dose range of 5·10 12 - 5·10 14 cm -2 has been studied by EPR and cathodoluminescence techniques. It is shown that the high energy ion irradiation leads to the appearance of modified track like one-dimensional structures with nontetrahedral coordination of atoms. A mechanism of microwave conductivity in modified structures of irradiated samples discussed in frame of a model of mobile quasi-particles of corresponding paramagnetic centres. Peculiarities of concentration distributions of paramagnetic centres corresponding to ion-modified structures and cathodoluminescence centres through the irradiated layer are connected with track channeling and stopped of a part of ions because of their elastic collisions with lattice atoms during ion stopping. (author). 18 refs., 5 figs

  6. Study of the thermal oxidation of titanium and zirconium under argon ion irradiation in the low MeV range (E = 15 MeV)

    International Nuclear Information System (INIS)

    Do, N.-L.

    2012-01-01

    We have shown that argon ion irradiation between 1 and 15 MeV produces damage on both titanium and zirconium surfaces, taking the form of accelerated oxidation and/or craterization effects, varying as a function of the projectile energy and the annealing atmosphere (temperature and pressure) simulating the environmental conditions of the fuel/cladding interface of PWR fuel rods. Using AFM, we have shown that the titanium and zirconium surface is attacked under light argon ion bombardment at high temperature (up to 500 C) in weakly oxidizing medium (under rarefied dry air pressure ranging from 5,7 10 -5 Pa to 5 10 -3 Pa) for a fixed fluence of about 5 10 14 ions.cm -2 . We observed the formation of nano-metric craters over the whole titanium surface irradiated between 2 and 9 MeV and the whole zirconium surface irradiated at 4 MeV, the characteristics of which vary depending on the temperature and the pressure. In the case of the Ar/Ti couple, the superficial damage efficiency increases when the projectile energy decreases from 9 to 2 MeV. Moreover, whereas the titanium surface seems to be transparent under the 15-MeV ion beam, the zirconium surface exhibits numerous micrometric craters surrounded by a wide halo. The crater characteristics (size and superficial density) differ significantly from that observed both in the low energy range (keV) where the energy losses are controlled by ballistic collisions (Sn) and in the high energy range (MeV - GeV) where the energy losses are controlled by electronic excitations (Se), which was not completely unexpected in this intermediate energy range for which combined Sn - Se stopping power effects are possibly foreseen. Using XPS associated to ionic sputtering, we have shown that there is an irradiation effect on thermal oxidation of titanium, enhanced under the argon ion beam between 2 and 9 MeV, and that there is also an energy effect on the oxide thickness and stoichiometry. The study conducted using Spectroscopic

  7. Effect of 120 MeV Ag{sup 9+} ion irradiation of YCOB single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Arun Kumar, R., E-mail: rarunpsgtech@yahoo.com [Crystal Growth Centre, Anna University, Chennai 600 025 (India); Department of Basic Sciences - Physics Division, PSG College of Technology, Coimbatore 641 004 (India); Dhanasekaran, R. [Crystal Growth Centre, Anna University, Chennai 600 025 (India)

    2012-09-15

    Single crystals of yttrium calcium oxy borate (YCOB) grown from boron-tri-oxide flux were subjected to swift heavy ion irradiation using silver Ag{sup 9+} ions from the 15 UD Pelletron facility at Inter University Accelerator Center, New Delhi. The crystals were irradiated at 1 Multiplication-Sign 10{sup 13}, 5 Multiplication-Sign 10{sup 13} and 1 Multiplication-Sign 10{sup 14} ions/cm{sup 2} fluences at room temperature and with 5 Multiplication-Sign 10{sup 13} ions/cm{sup 2} fluence at liquid nitrogen temperature. The pristine and the irradiated samples were characterized by glancing angle X-ray diffraction, UV-Vis-NIR and photoluminescence studies. From the characterization studies performed on the samples, it is inferred that the crystals irradiated at liquid nitrogen temperature had fewer defects compared to the crystals irradiated at room temperature and the defects increased when the ion fluence was increased at room temperature.

  8. Microstructure and Nano-Hardness of 10 MeV Cl-Ion Irradiated T91 Steel

    International Nuclear Information System (INIS)

    Hu Jing; Wang Xianping; Gao Yunxia; Zhuang Zhong; Zhang Tao; Fang Qianfeng; Liu Changsong

    2015-01-01

    Hardening and elemental segregation of T91 martenstic steel irradiated by 10 MeV Cl ions to doses from 0.06 dpa to 0.83 dpa were investigated with the nanoindentation technique and transmission electron microscopy (TEM). The results demonstrated that the irradiation hardening was closely related with irradiation dose. By increasing the dose, the hardness increased rapidly at first from the initial value of 3.15 GPa before irradiation, and then tended to saturate at a value of 3.58 GPa at the highest dose of 0.83 dpa. Combined with TEM observation, the mechanism of hardening was preliminary attributed to the formation of M(Fe,Cr) 2 3C 6 carbides induced by the high energy Cl-ion irradiation. (paper)

  9. Strain buildup in GaAs due to 100 MeV Ag ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Shramana; Bhaumik, Sudipta; Panda, Jaya Kumar [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302 (India); Ojha, Sunil [Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Dhar, Achintya [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302 (India); Kabiraj, D. [Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Roy, Anushree, E-mail: anushree@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302 (India)

    2013-12-01

    The formation of strained layers and a non-monotonic evolution of strain in high energy (100 MeV) silver ion (Ag{sup 7+}) irradiated undoped semi-insulating GaAs are observed and analyzed using Raman scattering and high resolution X-ray diffraction (HRXRD) measurements. At low fluence, compressively strained layers are formed, whereas, with increase in fluence both compressive and tensile strains appear as observed from HRXRD measurements. Further, at low fluence, the change in compressive strain with increase in fluence is found to be sharper than what is observed at higher fluence, thereby suggesting a critical fluence value, beyond which there is a simultaneous generation and annihilation of vacancy type defects. The initial blue shift and subsequent relative red shift beyond above critical fluence in the Raman peak also qualitatively reveal non-monotonic evolution of strain in this case. Finally, we demonstrate the sensitivity of Raman spectroscopy in detecting the decrease in lattice ordering in the crystal in the low fluence regime, below the detection limit of Rutherford back-scattering channeling (c-RBS) measurements.

  10. Depth distribution of damage in copper irradiated with MeV, Ni and He ions

    International Nuclear Information System (INIS)

    Narayan, J.; Noggle, T.S.; Oen, O.S.

    1975-01-01

    Transmission electron microscopy was used to study radiation damage as a function of depth caused by 58 and 4-MeV 58 Ni and 1-MeV He ions in copper single crystals at ambient temperature. The experimental damage density vs penetration depth distributions were compared with calculations based on the atomic collision theory of Lindhard et al. (LSS). For 58-MeV Ni ions, the calculated damage profile using the theoretical LSS value of the electronic stopping parameter (k = 0.167) agrees well with experiment. However, for 4-MeV Ni ions it is necessary to use k = 0.12 to get agreement with the experimental data. In the case of 1-MeV He, the depth location of the calculated damage peak is in good agreement with experiment when the electronic stopping determined by Chu and Powers is used whereas it is about 15 percent too close to the surface using the tables of Northcliffe and Schilling. (auth)

  11. In situ MeV ion beam analysis of ceramic surfaces modified by 100-400 keV ion irradiation

    International Nuclear Information System (INIS)

    Weber, W.J.; Yu, N.; Sickafus, K.E.

    1995-05-01

    This paper describes use of the in situ ion beam analysis facility developed at Los Alamos National Laboratory for the study of irradiation effects in ceramic materials. In this facility, an analytical beamline of 3 MV tandem accelerator and an irradiation bean-dine of 200 kV ion implanter are connected at 60 degrees to a common target chamber. This facility provides a fast, efficient, and quantitative measurement tool to monitor changes of composition and crystallinity of materials irradiated by 100-400 keV ions, through sequential measurement of backscattering events of MeV ions combined with ion channeling techniques. We will describe the details of the in situ ion beam analysis and ion irradiation and discuss some of the important issues and their solutions associated with the in situ experiment. These issues include (1) the selection of axial ion channeling direction for the measurement of radiation damage; (2) surface charging and charge collection for data acquisition; (3) surface sputtering during ion irradiation; (4) the effects of MeV analytical beam on the materials; and (5) the sample heating effect on ion beam analysis

  12. Mechanical properties of MeV ion-irradiated SiC/SiC composites characterized by indentation technique

    International Nuclear Information System (INIS)

    Park, J.Y.; Park, K.H.; Kim, W.; Kishimoto, H.; Kohyama, A.

    2007-01-01

    Full text of publication follows: SiC/SiC composites have been considered as a structural material for advanced fusion concepts. In the core of fusion reactor, those SiC/SiC composites are experienced the complex attacks such as strong neutron, high temperature and transmuted gases. One of the vital data for designing the SiC/SiC composites to the fusion reactor is mechanical properties under the severe neutron irradiation. In this work, various SiC/SiC composites were prepared by the different fabrication processes like CVI (chemical vapor infiltration), WA-CVI (SiC whisker assisted CVI) and hot-pressed method. The expected neutron irradiation was simulated by a silicon self-ion irradiation at a DuET facility; Dual-beam for Energy Technologies, Kyoto University. The irradiation temperature were 600 deg. C and 1200 deg. C, and the irradiation does were 5 dpa and 20 dpa, respectively. The 5.1 MeV Si ions were irradiated to the intrinsic CVI-SiC, SiC whisker reinforced SiC and SiC composites produced by hot-press method. The mechanical properties like hardness, elastic modulus and fracture toughness were characterized by an indentation technique. The ion irradiation caused the increase of the hardness and fracture toughness, which was dependent on the irradiation temperature. SiC whisker reinforcement in the SiC matrix accelerated the increase of the fracture toughness by the ion irradiation. For SiC/SiC composites after the ion irradiation, this work will provide the additional data for the mechanical properties as well as the effect of SiC whisker reinforcement. (authors)

  13. 160 MeV Ni12+ ion irradiation effects on the structural, optical and electrical properties of spherical polypyrrole nanoparticles

    International Nuclear Information System (INIS)

    Hazarika, J.; Kumar, A.

    2014-01-01

    Highlights: • Upon SHI irradiation the average diameters of PPy nanoparticles increases. • Crystallinity of PPy nanoparticles increases with increasing ion fluence. • IR active vibrational bands have different cross sections for SHI irradiation. • Upon SHI irradiation optical band gap energy of PPy nanoparticles decreases. • Upon SHI irradiation thermal stability of PPy nanoparticles increases. -- Abstract: In this study we report 160 MeV Ni 12+ swift heavy ion irradiation induced enhancement in the structural, optical and electrical properties of spherical polypyrrole (PPy) nanoparticles. High resolution transmission electron microscope results show that the pristine PPy nanoparticles have an average diameter of 11 nm while upon irradiation the average diameter increases to 18 nm at the highest ion fluence of 1 × 10 12 ions/cm 2 . X-ray diffraction studies show an enhancement of crystallinity and average crystallite size of PPy nanoparticles with increasing fluence. Studies of Fourier transform infrared spectra suggest the structural modifications of different functional groups upon irradiation. It also reveals that different functional groups have different sensitivity to irradiation. The infrared active N–H vibrational band at 3695 cm −1 is more sensitive to irradiation with a formation cross-section of 5.77 × 10 −13 cm 2 and effective radius of 4.28 nm. The UV–visible absorption spectra of PPy nanoparticles show that the absorption band undergoes a red shift with increasing fluence. Moreover upon irradiation the optical band gap energy decreases and Urbach’s energy increases with fluence. Thermo-gravimetric analysis studies suggest that upon irradiation the thermal stability of PPy nanoparticles increases which may be attributed to their enhanced crystallinity. Current–voltage characteristics of PPy nanoparticles exhibit non-Ohmic, symmetric behavior which increases with fluence

  14. Effect of 1.2 MeV argon ions irradiation on magnetic properties of ZnO

    International Nuclear Information System (INIS)

    Mishra, D.K.; Mohapatra, Jyoshnarani; Mahato, Banashree; Kumar, P.; Mitra, Amitav; Singh, S.K.; Kanjilal, D.

    2013-01-01

    Room temperature ferromagnetism in 1.2 MeV argon ions irradiated polycrystalline ZnO has been observed. The magnetic contribution in form of saturation magnetization is higher in sample irradiated with ion fluence of 1 × 10 15 ions/cm 2 . However, annealing of the defects at higher fluences of 5 × 10 15 ions/cm 2 reduce the magnetic contribution in comparison to the magnetic contribution of the lower fluences. The X-ray diffraction reveals that the degree of crystallinity decreases with the increase of ion fluences upto 1 × 10 15 ions/cm 2 and further it increases at a fluence of 5 × 10 15 ions/cm 2 . The inhomogeneous arrangement of grains and changes in their sizes with increasing ion fluences decrease the magnetic ordering of the system. The electron probe microstructure analyses and micro-Raman spectra of irradiated samples show in-homogeneity in zinc and oxygen ratio which is one of the causes to show ferromagnetism.

  15. Augmentation of thermoelectric performance of VO2 thin films irradiated by 200 MeV Ag9+-ions

    International Nuclear Information System (INIS)

    Khan, G.R.; Kandasami, A.; Bhat, B.A.

    2016-01-01

    Swift Heavy Ion (SHI) irradiation with 200 MeV Ag 9+ -ion beam at ion fluences of 1E11, 5E11, 1E12, and 5E12 for tuning of electrical transport properties of VO 2 thin films fabricated by so–gel technique on alumina substrates has been demonstrated in the present paper. The point defects created by SHI irradiation modulate metal to insulator phase transition temperature, carrier concentration, carrier mobility, electrical conductivity, and Seebeck coefficient of VO 2 thin films. The structural properties of the films were characterized by XRD and Raman spectroscopy and crystallite size was found to decrease upon irradiation. The atomic force microscopy revealed that the surface roughness of specimens first decreased and then increased with increasing fluence. Both resistance as well as Seebeck coefficient measurements demonstrated that all the samples exhibit metal–insulator phase transition and the transition temperatures decreases with increasing fluence. Hall effect measurements exhibited that carrier concentration increased continuously with increasing fluence which resulted in an increase of electrical conductivity by several orders of magnitude in the insulating phase. Seebeck coefficient in insulating phase remained almost constant in spite of an increase in the electrical conductivity by several orders of magnitude making SHI irradiation an alternative stratagem for augmentation of thermoelectric performance of the materials. The carrier mobility at room temperature decreased up to the beam fluence of 5E11 and then started increasing whereas Seebeck coefficient in metallic state first increased with increasing ion beam fluence up to 5E11 and thereafter decreased. Variation of these electrical transport parameters has been explained in detail. - Highlights: • Thermoelectric properties of VO 2 thin films enhance upon SHI irradiation. • Structural properties show that crystallite size decrease upon SHI irradiation. • Metal–insulator phase

  16. 130 MeV Au ion irradiation induced dewetting on In{sub 2}Te{sub 3} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Matheswaran, P.; Abhirami, K.M.; Gokul, B. [Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029 (India); Sathyamoorthy, R., E-mail: rsathya1959@gmail.com [Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029 (India); Prakash, Jai [Department of Chemistry, M.M.H. College, Ghaziabad 201001 (India); Asokan, K.; Kanjilal, D. [Materials Science Division, Inter University Accelerator Centre, New Delhi 110067 (India)

    2012-09-01

    Highlights: Black-Right-Pointing-Pointer In{sub 2}Te{sub 3} phase formed from In/Te bilayer by 130 MeV Au ion irradiation. Black-Right-Pointing-Pointer Lower fluence results mixed phases with initial state of dewetting. Black-Right-Pointing-Pointer At higher fluence, In{sub 2}Te{sub 3} phase with complete dewetting pattern is formed. Black-Right-Pointing-Pointer Thermal spike model is used to explain the inter face mixing phenomena. Black-Right-Pointing-Pointer SHI irradiation may be used to functionalize the structural and surface properties of thin films. - Abstract: In/Te bilayer thin films were prepared by sequential thermal evaporation and subsequently irradiated by 130 MeV Au ions. The pristine and irradiated samples were characterized by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) techniques. RBS spectra reveal the sputtering of Te film and interface mixing, with increasing fluence. The surface morphology showed the beginning of dewetting of Te thin film and formation of the partially connected with the mixed zones at the fluence of 1 Multiplication-Sign 10{sup 13} ions/cm{sup 2}. At the higher fluence of 3 Multiplication-Sign 10{sup 13} ions/cm{sup 2}, dewetted structures were isolated at the surface. Above results are explained based on the formation of craters, sputtering and dewetting followed by inter-diffusion at the interface of molten zones due to thermal spike induced by Au ions.

  17. 125 MeV Si 9+ ion irradiation of calcium phosphate thin film coated by rf-magnetron sputtering technique

    Science.gov (United States)

    Elayaraja, K.; Joshy, M. I. Ahymah; Suganthi, R. V.; Kalkura, S. Narayana; Palanichamy, M.; Ashok, M.; Sivakumar, V. V.; Kulriya, P. K.; Sulania, I.; Kanjilal, D.; Asokan, K.

    2011-01-01

    Titanium substrate was coated with hydroxyapatite by radiofrequency magnetron sputtering (rf-magnetron sputtering) technique and subjected to swift heavy ion (SHI) irradiation of 125 MeV with Si 9+ at fluences of 1 × 10 10, 1 × 10 11 and 1 × 10 12 ions/cm 2. The glancing incidence X-ray diffraction (GIXRD) analysis confirmed the HAp phase of the irradiated film. There was a considerable decrease in crystallinity and particle size after irradiation. In addition, DRS-UV reflectance spectra revealed a decrease in optical band gap ( Eg) from 5.2 to 4.6 eV. Wettability of biocompatible materials plays an important role in biological cells proliferation for tissue engineering, drug delivery, gene transfer and bone growth. HAp thin films irradiated with 1 × 10 11 ions/cm 2 fluence showed significant increase in wettability. While the SHI irradiated samples exhibited enhanced bioactivity, there was no significant variation in cell viability. Surface roughness, pores and average particle size were analyzed by atomic force microscopy (AFM).

  18. Low frequency alternating current conduction and dielectric relaxation in polypyrrole irradiated with 100 MeV swift heavy ions of silver (Ag{sup 8+})

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Amarjeet, E-mail: amarkaur@physics.du.ac.in [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Dhillon, Anju [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Avasthi, D.K. [Inter University Accelerator Center (IUAC), Aruna Asaf Ali Road, New Delhi 110067 (India)

    2013-07-15

    Polypyrrole (PPY) films were prepared by electrochemical polymerization technique. The fully undoped samples were irradiated with different radiation fluences ranging from 10{sup 10} to 10{sup 12} ions cm{sup −2} of 100 MeV silver (Ag{sup 8+}) ions. The temperature dependence of ac conductivity [σ{sub m}(ω)], dielectric constant (ε′) and dielectric loss (ε′′) of both irradiated as well as unirradiated samples have been investigated in 77–300 K. There exists typical Debye type dispersion. Giant increase in dielectric constant has been observed for irradiated samples which is attributed to polaronic defects produced during irradiation. - Graphical abstract: Display Omitted - Highlights: • Polypyrrole samples were prepared by electrochemical technique. • The fully undoped samples were irradiated with 100 MeV silver (Ag{sup 8+}) ions. • Giant increase in dielectric constant in irradiated samples is observed. • Dielectric behaviour is attributed to polaronic defects produced during irradiation.

  19. Low frequency alternating current conduction and dielectric relaxation in polypyrrole irradiated with 100 MeV swift heavy ions of silver (Ag8+)

    International Nuclear Information System (INIS)

    Kaur, Amarjeet; Dhillon, Anju; Avasthi, D.K.

    2013-01-01

    Polypyrrole (PPY) films were prepared by electrochemical polymerization technique. The fully undoped samples were irradiated with different radiation fluences ranging from 10 10 to 10 12 ions cm −2 of 100 MeV silver (Ag 8+ ) ions. The temperature dependence of ac conductivity [σ m (ω)], dielectric constant (ε′) and dielectric loss (ε′′) of both irradiated as well as unirradiated samples have been investigated in 77–300 K. There exists typical Debye type dispersion. Giant increase in dielectric constant has been observed for irradiated samples which is attributed to polaronic defects produced during irradiation. - Graphical abstract: Display Omitted - Highlights: • Polypyrrole samples were prepared by electrochemical technique. • The fully undoped samples were irradiated with 100 MeV silver (Ag 8+ ) ions. • Giant increase in dielectric constant in irradiated samples is observed. • Dielectric behaviour is attributed to polaronic defects produced during irradiation

  20. Effect of 50 MeV Li3+ ion irradiation on electrical characteristics of high speed NPN power transistor

    International Nuclear Information System (INIS)

    Dinesh, C.M.; Ramani; Radhakrishna, M.C.; Dutt, R.N.; Khan, S.A.; Kanjilal, D.

    2008-01-01

    Silicon NPN overlay RF power high speed commercial bipolar junction transistors (BJTs) find applications in military, space and communication equipments. Here we report the effect of 50 MeV Li 3+ ion irradiation in the fluence range 1 x 10 11 -1.8 x 10 12 ions cm -2 on NPN power transistor. The range (R), electronic energy loss (S e ), nuclear energy loss (S n ), total ionizing dose (TID) and total displacement damage (D d ) in the silicon target are calculated from TRIM Monte Carlo Code. Output resistance is 3.568 x 10 4 Ω for unirradiated device and it increases to 6 x 10 7 Ω as the fluence is increased from 1 x 10 11 to 1.8 x 10 12 ions cm -2 . The capacitance of the emitter-base junction of the transistor decreases and dielectric loss of the emitter-base junction increases with increase in ion fluence. The built in voltage of the unirradiated sample is 0.5 V and it shifts to 0.4 V after irradiation at fluence of 1.8 x 10 12 ions cm -2 and the corresponding doping density reduced to 5.758 x 10 16 cm -3 . The charge carrier removal rate varies linearly with the increase in ion fluence

  1. Polypropylene compositional evolution under 3.5 MeV He{sup +} ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Abdesselam, M., E-mail: abdesselam_m@yahoo.fr [Faculte de Physique, USTHB, BP32, El Alia, 16111 BEZ (Algeria); Muller, D. [InESS, UMR7163, 23 rue du Loess, BP20, F-67037 Strasbourg Cedex 02 (France); Djebara, M.; Chami, A.C. [Faculte de Physique, USTHB, BP32, El Alia, 16111 BEZ (Algeria); Montgomery, P. [InESS, UMR7163, 23 rue du Loess, BP20, F-67037 Strasbourg Cedex 02 (France)

    2012-05-01

    A helium beam at 3.5 MeV was used to induce damage in thin polypropylene film of 5.1 {mu}m in thickness. The fluence ranges from 2 Multiplication-Sign 10{sup 12} to 3.5 Multiplication-Sign 10{sup 15} cm{sup -2}. The evolution of the atomic composition (C and H) as a function of the fluence was investigated in situ by forward elastic scattering (C({alpha}, {alpha})C) and hydrogen elastic recoil detection (H({alpha}, H){alpha}), respectively. The helium beam was used at the same time for irradiation and analysis. In respect to the high sensitivity of the polypropylene to radiation damage, the beam current was kept at very low intensity of 0.5 nA. The mass loss becomes significant above a fluence of {approx}5 Multiplication-Sign 10{sup 13} He{sup +} cm{sup -2}. The carbon depletion levels off at a fluence of {approx}5 Multiplication-Sign 10{sup 14} He{sup +} cm{sup -2} approximately while hydrogen loss continues to be present along the whole of the studied fluence range. The final carbon and hydrogen losses, at the highest fluence, are around 17% and 48% of their initial contents, respectively. Satisfactory fits to the release curves have been obtained in the framework of the bulk molecular recombination model (BMR). The deduced hydrogen and carbon release cross sections are 7.8 and 65.2 Multiplication-Sign 10{sup -16} cm{sup 2}, respectively. A comparison with our previous measurements of polyethylene terephthalate (PET) film irradiated with 3.7 MeV He{sup +} beam is made.

  2. Polypropylene compositional evolution under 3.5 MeV He+ ion irradiation

    International Nuclear Information System (INIS)

    Abdesselam, M.; Muller, D.; Djebara, M.; Chami, A.C.; Montgomery, P.

    2012-01-01

    A helium beam at 3.5 MeV was used to induce damage in thin polypropylene film of 5.1 μm in thickness. The fluence ranges from 2 × 10 12 to 3.5 × 10 15 cm −2 . The evolution of the atomic composition (C and H) as a function of the fluence was investigated in situ by forward elastic scattering (C(α, α)C) and hydrogen elastic recoil detection (H(α, H)α), respectively. The helium beam was used at the same time for irradiation and analysis. In respect to the high sensitivity of the polypropylene to radiation damage, the beam current was kept at very low intensity of 0.5 nA. The mass loss becomes significant above a fluence of ∼5 × 10 13 He + cm −2 . The carbon depletion levels off at a fluence of ∼5 × 10 14 He + cm −2 approximately while hydrogen loss continues to be present along the whole of the studied fluence range. The final carbon and hydrogen losses, at the highest fluence, are around 17% and 48% of their initial contents, respectively. Satisfactory fits to the release curves have been obtained in the framework of the bulk molecular recombination model (BMR). The deduced hydrogen and carbon release cross sections are 7.8 and 65.2 × 10 −16 cm 2 , respectively. A comparison with our previous measurements of polyethylene terephthalate (PET) film irradiated with 3.7 MeV He + beam is made.

  3. Polypropylene compositional evolution under 3.5 MeV He+ ion irradiation

    Science.gov (United States)

    Abdesselam, M.; Muller, D.; Djebara, M.; Chami, A. C.; Montgomery, P.

    2012-05-01

    A helium beam at 3.5 MeV was used to induce damage in thin polypropylene film of 5.1 μm in thickness. The fluence ranges from 2 × 1012 to 3.5 × 1015 cm-2. The evolution of the atomic composition (C and H) as a function of the fluence was investigated in situ by forward elastic scattering (C(α, α)C) and hydrogen elastic recoil detection (H(α, H)α), respectively. The helium beam was used at the same time for irradiation and analysis. In respect to the high sensitivity of the polypropylene to radiation damage, the beam current was kept at very low intensity of 0.5 nA. The mass loss becomes significant above a fluence of ˜5 × 1013 He+ cm-2. The carbon depletion levels off at a fluence of ˜5 × 1014 He+ cm-2 approximately while hydrogen loss continues to be present along the whole of the studied fluence range. The final carbon and hydrogen losses, at the highest fluence, are around 17% and 48% of their initial contents, respectively. Satisfactory fits to the release curves have been obtained in the framework of the bulk molecular recombination model (BMR). The deduced hydrogen and carbon release cross sections are 7.8 and 65.2 × 10-16 cm2, respectively. A comparison with our previous measurements of polyethylene terephthalate (PET) film irradiated with 3.7 MeV He+ beam is made.

  4. Damage accumulation in MgO irradiated with MeV Au ions at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Bachiller-Perea, Diana, E-mail: dianabachillerperea@gmail.com [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Univ. Paris-Sud, CNRS-IN2P3, Université Paris-Saclay, 91405, Orsay Cedex (France); Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, C/Faraday 3, 28049, Madrid (Spain); Dpto. de Física Aplicada, Universidad Autónoma de Madrid, Ciudad Universitaria de Cantoblanco, 28049, Madrid (Spain); Debelle, Aurélien, E-mail: aurelien.debelle@u-psud.fr [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Univ. Paris-Sud, CNRS-IN2P3, Université Paris-Saclay, 91405, Orsay Cedex (France); Thomé, Lionel [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Univ. Paris-Sud, CNRS-IN2P3, Université Paris-Saclay, 91405, Orsay Cedex (France); Behar, Moni [Instituto de Física, Universidade Federal do Rio Grande do Sul, C.P. 15051, 91501-970, Porto Alegre, RS (Brazil)

    2016-09-15

    The damage accumulation process in MgO single crystals under medium-energy heavy ion irradiation (1.2 MeV Au) at fluences up to 4 × 10{sup 14} cm{sup −2} has been studied at three different temperatures: 573, 773, and 1073 K. Disorder depth profiles have been determined through the use of the Rutherford backscattering spectrometry in channeling configuration (RBS/C). The analysis of the RBS/C data reveals two steps in the MgO damage process, irrespective of the temperature. However, we find that for increasing irradiation temperature, the damage level decreases and the fluence at which the second step takes place increases. A shift of the damage peak at increasing fluence is observed for the three temperatures, although the position of the peak depends on the temperature. These results can be explained by an enhanced defect mobility which facilitates defect migration and may favor defect annealing. X-ray diffraction reciprocal space maps confirm the results obtained with the RBS/C technique. - Highlights: • High-temperature MeV-ion irradiated MgO exhibits a two-step damage process. • The occurrence of the second step is delayed with increasing temperature. • The damage level decreases with increasing temperature. • A shift of the damage peak is observed with increasing fluence. • A high defect mobility at high temperatures in MgO is clearly evidenced.

  5. TL response of Eu activated LiF nanocubes irradiated by 85 MeV carbon ions

    Energy Technology Data Exchange (ETDEWEB)

    Salah, Numan, E-mail: nsalah@kau.edu.sa [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Alharbi, Najlaa D. [Sciences Faculty for Girls, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Habib, Sami S. [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Lochab, S.P. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

    2015-09-01

    Carbon ions were found to be effective for cancer treatment. These heavy ions have a high relative biological effectiveness compared to those of photons. They have higher linear energy transfer and sharper Bragg peak with a very excellent local tumor control. However, the dose of these swift heavy ions needs to be measured with great accuracy. Lithium fluoride (LiF) is a highly sensitive phosphor widely used for radiation dosimetry. In this work Eu activated LiF nanocubes were exposed to 85 MeV C{sup 6+} ion beam and evaluated for their thermoluminescence (TL) response. Pellet forms of this nanomaterial were exposed to these ions in the fluence range 10{sup 9}–10{sup 13} ions/cm{sup 2}. The obtained result shows a prominent TL glow peak at around 320 °C, which is different than that induced by gamma rays. This glow peak exhibits a linear response in the range 10{sup 9}–10{sup 12} ions/cm{sup 2}, corresponding to the equivalent absorbed doses 0.273–273 kGy. The absorbed doses, penetration depths and main energy loss were calculated using TRIM code based on the Monte Carlo simulation. The supralinearity function and stopping power in this nanomaterial were also studied. The modification induced in the glow curve structure as a result of changing irradiation type might be utilized to use LiF:Eu nanocubes as a dosimeter for mixed filed radiations. Moreover, the wide linear response of LiF:Eu nanocubes along with the low fading are another imperative results suggesting that this nanomaterial might be a good candidate for carbon ions dosimetry.

  6. TL response of Eu activated LiF nanocubes irradiated by 85 MeV carbon ions

    International Nuclear Information System (INIS)

    Salah, Numan; Alharbi, Najlaa D.; Habib, Sami S.; Lochab, S.P.

    2015-01-01

    Carbon ions were found to be effective for cancer treatment. These heavy ions have a high relative biological effectiveness compared to those of photons. They have higher linear energy transfer and sharper Bragg peak with a very excellent local tumor control. However, the dose of these swift heavy ions needs to be measured with great accuracy. Lithium fluoride (LiF) is a highly sensitive phosphor widely used for radiation dosimetry. In this work Eu activated LiF nanocubes were exposed to 85 MeV C 6+ ion beam and evaluated for their thermoluminescence (TL) response. Pellet forms of this nanomaterial were exposed to these ions in the fluence range 10 9 –10 13 ions/cm 2 . The obtained result shows a prominent TL glow peak at around 320 °C, which is different than that induced by gamma rays. This glow peak exhibits a linear response in the range 10 9 –10 12 ions/cm 2 , corresponding to the equivalent absorbed doses 0.273–273 kGy. The absorbed doses, penetration depths and main energy loss were calculated using TRIM code based on the Monte Carlo simulation. The supralinearity function and stopping power in this nanomaterial were also studied. The modification induced in the glow curve structure as a result of changing irradiation type might be utilized to use LiF:Eu nanocubes as a dosimeter for mixed filed radiations. Moreover, the wide linear response of LiF:Eu nanocubes along with the low fading are another imperative results suggesting that this nanomaterial might be a good candidate for carbon ions dosimetry

  7. MeV ion irradiation effects on the luminescence properties of Si-implanted SiO{sub 2}-thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chulapakorn, T.; Primetzhofer, D. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J.; Hallen, A. [Royal Institute of Technology (KTH), School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

    2016-12-15

    The effects of MeV heavy ion irradiation at varying fluence and flux on excess Si, introduced in SiO{sub 2} by keV ion implantation, are investigated by photoluminescence (PL). From the PL peak wavelength (λ) and decay lifetime (τ), two PL sources are distinguished: (i) quasi-direct recombination of excitons of Si-nanoparticles (SiNPs), appearing after thermal annealing (λ > 720 nm, τ ∝ μs), and (ii) fast-decay PL, possibly due to oxide-related defects (λ ∝ 575-690 nm, τ ∝ ns). The fast-decay PL (ii) observed before and after ion irradiation is induced by ion implantation. It is found that this fast-decay luminescence decreases for higher irradiation fluence of MeV heavy ions. After thermal annealing (forming SiNPs), the SiNP PL is reduced for samples irradiated by MeV heavy ions but found to stabilize at higher level for higher irradiation flux; the (ii) band vanishes as a result of annealing. The results are discussed in terms of the influence of electronic and nuclear stopping powers. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. 160 MeV Ni{sup 12+} ion irradiation effects on the dielectric properties of polyaniline nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Hazarika, J.; Nath, Chandrani [Materials Research Laboratory, Department of Physics, Tezpur University, Tezpur 784028, Assam (India); Kumar, A., E-mail: ask@tezu.ernet.in [Materials Research Laboratory, Department of Physics, Tezpur University, Tezpur 784028, Assam (India)

    2012-10-01

    We report on the dielectric properties and a.c. conductivity studies of CSA doped polyaniline nanotubes. Nanotubes of 47-100 nm diameter, were synthesized by the self-assembly method and irradiated using Ni{sup 12+} ions of 160 MeV energy with fluences of 1 Multiplication-Sign 10{sup 10}, 5 Multiplication-Sign 10{sup 10}, 1 Multiplication-Sign 10{sup 11} and 3 Multiplication-Sign 10{sup 11} ions/cm{sup 2}. X-ray diffraction studies reveal an increase in the degree of crystallinity and consequently, the extent of order of the nanotubes with increasing fluence, but show a lower degree of crystallinity at higher fluence. The decrease in d-spacing for the (100) reflections with fluence is ascribed to the decrease in the tilt angle of the aligned polymer chains. A significant change was seen after irradiation in dielectric and electrical properties which may be correlated with the increased carrier concentration and structural modifications in the polymer films. The surface conductivity of films increases with increasing fluence, which also decreases at higher fluence. The a.c. conduction mechanism for the nanotubes could be explained in terms of correlated barrier hopping model. The existence of polarons as the major charge carriers in the present nanotube system was confirmed by the low values of polaron binding energy, found to decrease with fluence. The hopping distance increases with fluence indicating that the hopping probability increases with fluence.

  9. Correlation between the structure modification and conductivity of 3 MeV Si ion-irradiated polyimide

    International Nuclear Information System (INIS)

    Sun Youmei; Zhu Zhiyong; Li Changlin

    2002-01-01

    The surface modification of the polyimide (PI/Kapton) films was carried out by 3 MeV Si + implantation to fluences ranging from 1x10 12 to 1.25x10 15 ions/cm 2 . Fourier transform infrared (FTIR), Raman and ultraviolet/visible (UV/Vis) spectroscopes were employed to investigate the chemical degradation of function groups in the irradiated layer. FTIR results show that the absorbance of typical function group decreases exponentially as a function of fluence. The damage cross-section of typical bonds of PI was evaluated from the FTIR spectra. Raman analysis shows the absorbed dose for destruction of all function groups is above 218 MGy. The red shifting of the absorption edge from UV to visible reveals the band gap closing which results from increase of the cluster size. The production efficiency of the chromophores was discussed according to UV/Vis analysis. Irradiation dramatically enhances the electrical conductivity and the sheet resistivity in our experiment descends nearly 10 orders of magnitude compared with its intrinsic value

  10. Ionic conduction in 70-MeV C5+-ion-irradiated poly(vinylidenefluoride- co-hexafluoropropylene)-based gel polymer electrolytes

    International Nuclear Information System (INIS)

    Saikia, D.; Kumar, A.; Singh, F.; Avasthi, D.K.; Mishra, N.C.

    2005-01-01

    In an attempt to increase the Li + -ion diffusivity, poly(vinylidenefluoride-co-hexafluoropropylene)-(propylene carbonate+diethyl carbonate)-lithium perchlorate gel polymer electrolyte system has been irradiated with 70-MeV C 5+ -ion beam of nine different fluences. Swift heavy-ion irradiation shows enhancement in ionic conductivity at lower fluences and decrease in ionic conductivity at higher fluences with respect to unirradiated gel polymer electrolyte films. Maximum room-temperature (303 K) ionic conductivity is found to be 2x10 -2 S/cm after irradiation with a fluence of 10 11 ions/cm 2 . This interesting result could be attributed to the fact that for a particular ion beam with a given energy, a higher fluence provides critical activation energy for cross linking and crystallization to occur, which results in the decrease in ionic conductivity. X-ray-diffraction results show decrease in the degree of crystallinity upon ion irradiation at low fluences (≤10 11 ions/cm 2 ) and increase in crystallinity at higher fluences (>10 11 ions/cm 2 ). Analysis of Fourier-transform infrared spectroscopy results suggests the bond breaking at a fluence of 5x10 9 ions/cm 2 and cross linking at a fluence of 10 12 ions/cm 2 and corroborate conductivity and x-ray-diffraction results. Scanning electron micrographs exhibit increased porosity of the polymer electrolyte after ion irradiation

  11. 50 MeV lithium ion beam irradiation effects in poly vinylidene fluoride

    Indian Academy of Sciences (India)

    Unknown

    visible, FT-IR spectroscopy,. XRD technique and electrical frequency response using LCR bridge. ... change has been observed after irradiation, indicating that this polymer is ... during the last few decades because of their low cost, easy.

  12. Effect of 100 MeV Ag{sup +7} ion irradiation on the bulk and surface magnetic properties of Co–Fe–Si thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hysen, T., E-mail: hysenthomas@gmail.com [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India); Department of Physics, Christian College, Chengannur, Kerala 689 122 (India); Geetha, P. [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India); Al-Harthi, Salim; Al-Omari, I.A. [Department of Physics, College of Science, Sultan Qaboos University, Al Khod 123 (Oman); Lisha, R. [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India); Ramanujan, R.V. [School of Materials Science and Engineering, Nanyang Technological University, Singapore 639 798 (Singapore); Sakthikumar, D. [Graduate School of Interdisciplinary New Science, Toyo University, Kawagoe (Japan); Avasthi, D.K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Anantharaman, M.R., E-mail: mra@cusat.ac.in [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India)

    2014-12-15

    Thin films of Co–Fe–Si were vacuum evaporated on pre-cleaned float glass substrates employing thermal evaporation. The films were subsequently irradiated with 100 MeV Ag{sup +7} ions at fluences of 1×10{sup 11}, 1×10{sup 12} and 1×10{sup 13} ions/cm{sup 2}. The pristine and irradiated samples were subjected to surface analysis using Atomic Force Microscopy (AFM), Vibrating Sample Magnetometry (VSM) and Magneto Optic Kerr Effect (MOKE) measurements. The as deposited film has a root mean square roughness (Rq) of 8.9 nm and an average roughness of (Ra) 5.6 nm. Irradiation of the as deposited films with 100 MeV Ag{sup 7+} ions modifies the surface morphology. Irradiating with ions at fluences of 1×10{sup 11} ions/cm{sup 2} smoothens the mesoscopic hill-like structures, and then, at 1×10{sup 12} ions/cm{sup 2} new surface structures are created. When the fluence is further increased to 1×10{sup 13} ions/cm{sup 2} an increase in the surface roughness is observed. The MOKE loop of as prepared film indicated a squareness ratio of 0.62. As the film is irradiated with fluences of 1×10{sup 11} ions/cm{sup 2}, 1×10{sup 12} ions/cm{sup 2} and 1×10{sup 13} ions/cm{sup 2} the squareness ratio changes to 0.76, 0.8 and 0.86 respectively. This enhancement in squareness ratio towards 1 is a typical feature when the exchange interaction starts to dominates the inherent anisotropies in the system. The variation in surface magnetisation is explained based on the variations in surface roughness with swift heavy ion (SHI) irradiation. - Highlights: • We have irradiated thermally evaporated Co–Fe–Si thin films on glass substrate with 100 MeV Ag{sup +7} ions using the 15 UD Pelletron Accelerator at IUAC, New Delhi, India. • Surface morphology and magnetic characteristics of the films can be altered with ion irradiation. • It was observed that the variation in surface magnetic properties correlates well with the changes in surface morphology, further reiterating the

  13. Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

    International Nuclear Information System (INIS)

    Hlatshwayo, T T; Kuhudzai, R J; Njoroge, E G; Malherbe, J B; O’Connell, J H; Skuratov, V A; Msimanga, M

    2015-01-01

    The effect of swift heavy ion (Xe 167 MeV) irradiation on polycrystalline SiC individually implanted with 360 keV Kr and Xe ions at room temperature to fluences of 2  ×  10 16 cm −2 and 1  ×  10 16 cm −2 respectively, was investigated using transmission electron microscopy (TEM), Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Implanted specimens were each irradiated with 167 MeV Xe +26 ions to a fluence of 8.3  ×  10 14 cm −2 at room temperature. It was observed that implantation of 360 keV Kr and Xe ions individually at room temperature amorphized the SiC from the surface up to a depth of 186 and 219 nm respectively. Swift heavy ion (SHI) irradiation reduced the amorphous layer by about 27 nm and 30 nm for the Kr and Xe samples respectively. Interestingly, the reduction in the amorphous layer was accompanied by the appearance of randomly oriented nanocrystals in the former amorphous layers after SHI irradiation in both samples. Previously, no similar nanocrystals were observed after SHI irradiations at electron stopping powers of 33 keV nm −1 and 20 keV nm −1 to fluences below 10 14 cm −2 . Therefore, our results suggest a fluence threshold for the formation of nanocrystals in the initial amorphous SiC after SHI irradiation. Raman results also indicated some annealing of radiation damage after swift heavy ion irradiation and the subsequent formation of small SiC crystals in the amorphous layers. No diffusion of implanted Kr and Xe was observed after swift heavy ion irradiation. (paper)

  14. Modification of the microstructure and electronic properties of rutile TiO_2 thin films with 79 MeV Br ion irradiation

    International Nuclear Information System (INIS)

    Rath, Haripriya; Dash, P.; Singh, U.P.; Avasthi, D.K.; Kanjilal, D.; Mishra, N.C.

    2015-01-01

    Modifications induced by 79 MeV Br ions in rutile titanium dioxide thin films, synthesized by dc magnetron sputtering are presented. Irradiations did not induce any new XRD peak corresponding to any other phase. The area and the width of the XRD peaks were considerably affected by irradiation, and peaks shifted to lower angles. But the samples retained their crystallinity at the highest fluence (1 × 10"1"3 ions cm"−"2) of irradiation even though the electronic energy loss of 79 MeV Br ions far exceeds the reported threshold value for amorphization of rutile TiO_2. Fitting of the fluence dependence of the XRD peak area to Poisson equation yielded the radius of ion tracks as 2.4 nm. Ion track radius obtained from the simulation based on the thermal spike model matches closely with that obtained from the fluence dependence of the area under XRD peaks. Williamson–Hall analysis of the XRD spectra indicated broadening and shifting of the peaks are a consequence of irradiation induced defect accumulation leading to microstrains, as was also indicated by Raman and UV–Visible absorption study.

  15. Elastic atomic displacements and color center creation in LiF crystals irradiated with 3-, 9- and 12-MeV Au ions

    International Nuclear Information System (INIS)

    Sorokin, M.V.; Papaleo, R.M.; Schwartz, K.

    2009-01-01

    Creation of color centers in LiF under irradiation with 3-12-MeV Au ions was studied. Comparison of experimental data of color center creation with computer simulation of the energy deposition and elastic atomic displacements reveals the role of elastic collisions in defect creation by these ions, which have comparable magnitudes of electronic and elastic stopping. The experimentally measured efficiency of color center creation and that predicted by the simulation of elastic displacements have a similar dependence on the projectile energy. Thus, the color center creation is mainly associated with the elastic collisions, despite the relatively large values of the electronic stopping power for these ions. (orig.)

  16. 160 MeV Ni{sup 12+} ion irradiation effects on the structural, optical and electrical properties of spherical polypyrrole nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Hazarika, J.; Kumar, A., E-mail: ask@tezu.ernet.in

    2014-01-01

    Highlights: • Upon SHI irradiation the average diameters of PPy nanoparticles increases. • Crystallinity of PPy nanoparticles increases with increasing ion fluence. • IR active vibrational bands have different cross sections for SHI irradiation. • Upon SHI irradiation optical band gap energy of PPy nanoparticles decreases. • Upon SHI irradiation thermal stability of PPy nanoparticles increases. -- Abstract: In this study we report 160 MeV Ni{sup 12+} swift heavy ion irradiation induced enhancement in the structural, optical and electrical properties of spherical polypyrrole (PPy) nanoparticles. High resolution transmission electron microscope results show that the pristine PPy nanoparticles have an average diameter of 11 nm while upon irradiation the average diameter increases to 18 nm at the highest ion fluence of 1 × 10{sup 12} ions/cm{sup 2}. X-ray diffraction studies show an enhancement of crystallinity and average crystallite size of PPy nanoparticles with increasing fluence. Studies of Fourier transform infrared spectra suggest the structural modifications of different functional groups upon irradiation. It also reveals that different functional groups have different sensitivity to irradiation. The infrared active N–H vibrational band at 3695 cm{sup −1} is more sensitive to irradiation with a formation cross-section of 5.77 × 10{sup −13} cm{sup 2} and effective radius of 4.28 nm. The UV–visible absorption spectra of PPy nanoparticles show that the absorption band undergoes a red shift with increasing fluence. Moreover upon irradiation the optical band gap energy decreases and Urbach’s energy increases with fluence. Thermo-gravimetric analysis studies suggest that upon irradiation the thermal stability of PPy nanoparticles increases which may be attributed to their enhanced crystallinity. Current–voltage characteristics of PPy nanoparticles exhibit non-Ohmic, symmetric behavior which increases with fluence.

  17. Comparison of 4.2 MeV Fe+ and 46.5 MeV Ni6+ ion irradiation for the study of void swelling

    International Nuclear Information System (INIS)

    Blamires, N.G.; Worth, J.H.

    1975-11-01

    Void formation in pure nickel and 316 steel containing 10 ppm He has been studied using 4.2 MeV Fe+ ions from the Harwell Van de Graaff accelerator. The dose dependence of swelling in nickel at 525degC and the dose and temperature dependence of swelling in 316 steel is reported. The results are compared with those of other workers, especially those sup(13,14) using 46.5 MeV Ni 6+ ions. In general, there is good agment, except for a marked decrease in swelling of 316 steel at 650degC and 700degC compared with the Ni 6+ bombardment. The reason for this is thought to result from the restricted width of the damaged region in the low energy case which at the high temperatures is comparable with the inter-void spacing. Anomalous void distributions adjacent to grain boundaries are reported and are probably caused by grain boundary movement. Denuded zones at grain boundaries in 316 steel vary in width from approximatly 1300A at 450degC to approximatly 8800A at 700degC. The region adjacent to the surface of the nickel specimens exhibits an abnormally high swelling. Possible explanations are suggested

  18. Thermal spike model interpretation of sputtering yield data for Bi thin films irradiated by MeV {sup 84}Kr{sup 15+} ions

    Energy Technology Data Exchange (ETDEWEB)

    Mammeri, S. [Centre de Recherche Nucléaire d’Alger, B.P. 399, 02 Bd. Frantz Fanon, Alger-gare, Algiers (Algeria); Ouichaoui, S., E-mail: souichaoui@gmail.com [Université des Sciences et de la Technologie H. Boumediene (USTHB), Faculté de Physique, Laboratoire SNIRM, B.P. 32, El-Alia, 16111 Bab Ezzouar, Algiers (Algeria); Ammi, H. [Centre de Recherche Nucléaire d’Alger, B.P. 399, 02 Bd. Frantz Fanon, Alger-gare, Algiers (Algeria); Pineda-Vargas, C.A. [iThemba LABS, National Research Foundation, P.O. Box 722, Somerset West 7129 (South Africa); Faculty of Health and Wellness Sciences, CPUT, P.O. Box 1906, Bellville 7535 (South Africa); Dib, A. [Centre de Recherche Nucléaire d’Alger, B.P. 399, 02 Bd. Frantz Fanon, Alger-gare, Algiers (Algeria); Msimanga, M. [iThemba LABS, National Research Foundation, P. Bag 11, Wits 2050, Johannesburg (South Africa); Department of Physics, Tshwane University of Technology, P. Bag X680, Pretoria 001 (South Africa)

    2015-07-01

    A modified thermal spike model initially proposed to account for defect formation in metals within the high heavy ion energy regime is adapted for describing the sputtering of Bi thin films under MeV Kr ions. Surface temperature profiles for both the electronic and atomic subsystems have been carefully evaluated versus the radial distance and time with introducing appropriate values of the Bi target electronic stopping power for multi-charged Kr{sup 15+} heavy ions as well as different target physical proprieties like specific heats and thermal conductivities. Then, the total sputtering yields of the irradiated Bi thin films have been determined from a spatiotemporal integration of the local atomic evaporation rate. Besides, an expected non negligible contribution of elastic nuclear collisions to the Bi target sputtering yields and ion-induced surface effects has also been considered in our calculation. Finally, the latter thermal spike model allowed us to derive numerical sputtering yields in satisfactorily agreement with existing experimental data both over the low and high heavy ion energy regions, respectively, dominated by elastic nuclear collisions and inelastic electronic collisions, in particular with our data taken recently for Bi thin films irradiated by 27.5 MeV Kr{sup 15+} heavy ions. An overall consistency of our model calculation with the predictions of sputtering yield theoretical models within the target nuclear stopping power regime was also pointed out.

  19. MeV ion irradiation induced evolution of morphological, structural and optical properties of nanostructured SnO2 thin films

    International Nuclear Information System (INIS)

    Mohapatra, Satyabrata; Bhardwaj, Neha; Pandey, Akhilesh

    2015-01-01

    Nanostructured SnO 2 thin films were prepared by carbothermal evaporation method. Morphological, structural and optical properties of the SnO 2 thin films, before and after 8 MeV Si ion irradiation to fluences varying from 1 × 10 13 to 1 × 10 15 ions cm −2 , were well characterized using atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), x-ray diffraction (XRD), Raman spectroscopy and photoluminescence spectroscopy (PL). XRD studies revealed the presence of SnO 2 and Sn nanoparticles in the as-deposited samples. AFM and FESEM studies on the irradiated samples revealed formation of nanoring-like structures, at a fluence of 1 × 10 15 ions cm −2 , with a central hole and circular rim consisting of nearly monodisperse SnO 2 nanoparticles. PL studies revealed strong enhancement in UV emissions upon 8 MeV Si ion irradiation. A growth mechanism underlying the formation of SnO 2 nanorings involving self-assembly of SnO 2 nanoparticles around nanoholes is tentatively proposed. (paper)

  20. Effect of 520 MeV Kr{sup 20+} ion irradiation on the critical current density of Bi-2212 single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Terai, Takayuki; Ito, Yasuyuki [Tokyo Univ. (Japan). Faculty of Engineering; Kishio, Kouji

    1996-10-01

    Change in magnetic properties of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+y} (Bi-2212) single crystals due to Kr{sup 20+} ion irradiation is reported, focused on critical current density and irreversibility magnetic field. The Bi-2212 single crystal specimens (3x3x0.3 mm{sup 3}) were prepared by the floating zone method. Each specimen was irradiated with 520 MeV Kr{sup 20+} ions of 10{sup 10}-10{sup 11} cm{sup -2} in the fluence. Magnetic hysteresis was measured at 4.2K-60K with a vibrating sample magnetometer before and after irradiation. Very large enhancement was observed in critical current density and irreversibility magnetic field above 20K. (author)

  1. A novel facility for 3D micro-irradiation of living cells in a controlled environment by MeV ions.

    Science.gov (United States)

    Mäckel, V; Meissl, W; Ikeda, T; Clever, M; Meissl, E; Kobayashi, T; Kojima, T M; Imamoto, N; Ogiwara, K; Yamazaki, Y

    2014-01-01

    We present a novel facility for micro-irradiation of living targets with ions from a 1.7 MV tandem accelerator. We show results using 1 MeV protons and 2 MeV He(2+). In contrast to common micro-irradiation facilities, which use electromagnetic or electrostatic focusing and specially designed vacuum windows, we employ a tapered glass capillary with a thin end window, made from polystyrene with a thickness of 1-2 μm, for ion focusing and extraction. The capillary is connected to a beamline tilted vertically by 45°, which allows for easy immersion of the extracted ions into liquid environment within a standard cell culture dish. An inverted microscope is used for simultaneously observing the samples as well as the capillary tip, while a stage-top incubator provides an appropriate environment for the samples. Furthermore, our setup allows to target volumes in cells within a μm(3) resolution, while monitoring the target in real time during and after irradiation.

  2. Thermoluminescence properties of Al{sub 2}O{sub 3}:Tb nanoparticles irradiated by gamma rays and 85 MeV C{sup 6+} ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Salah, Numan, E-mail: nsalah@kau.edu.sa [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Alharbi, Najlaa D. [Sciences Faculty for Girls, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Habib, Sami S. [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Lochab, S.P. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

    2015-11-15

    Carbon ions beam is recently recognized as an ideal cancer treatment modality, because of its excellent local tumor control. These ions have a high relative biological effectiveness resulting from high linear energy transfer (LET) and their sharp Bragg peak. However, the dose of those energetic ions needs to be measured with great precision using a proper dosimeter. Aluminum Oxide (Al{sub 2}O{sub 3}) is a highly luminescent phosphor widely used for radiation dosimetry using thermoluminesence (TL) technique. In this work nanoparticles of this material activated by different elements like Eu, Tb, Dy, Cu and Ag were evaluated for their TL response to gamma rays irradiation. Tb doped sample is found to be the most sensitive sample, which could be selected for exposure to 85 MeV C{sup 6+} ion beam in the fluence range 10{sup 9}–10{sup 13} ions/cm{sup 2}. The obtained result shows that C ion beam irradiated sample has a simple glow curve structure with a prominent glow peak at around 230 °C. This glow curve has a dosimetric peak better than those induced by gamma rays. This glow peak exhibits a linear response in the range 10{sup 9}–10{sup 11} ions/cm{sup 2}, corresponding to the equivalent absorbed doses 0.285–28.5 kGy. The absorbed doses, penetration depths and main energy loss were calculated using TRIM code based on the Monte Carlo simulation. The wide linear response of Al{sub 2}O{sub 3}:Tb nanoparticles along with the low fading makes this low cost nanomaterial a good candidate for C ion beam dosimetry. - Highlights: • Nanoparticles of Al{sub 2}O{sub 3} doped with Eu, Tb, Dy, Cu and Ag were synthesised. • They were evaluated for their TL response to gamma rays and C ion beam irradiation. • Tb doped sample is the most sensitive sample to gamma rays. • Al{sub 2}O{sub 3}:Tb was exposed to 85 MeV C{sup 6+} ion beam in the fluence range 10{sup 9}-10{sup 13} ions/cm{sup 2}. • The glow peak induced by C ions has a linear response in the range 10{sup 9

  3. Thermoluminescence properties of Al2O3:Tb nanoparticles irradiated by gamma rays and 85 MeV C6+ ion beam

    International Nuclear Information System (INIS)

    Salah, Numan; Alharbi, Najlaa D.; Habib, Sami S.; Lochab, S.P.

    2015-01-01

    Carbon ions beam is recently recognized as an ideal cancer treatment modality, because of its excellent local tumor control. These ions have a high relative biological effectiveness resulting from high linear energy transfer (LET) and their sharp Bragg peak. However, the dose of those energetic ions needs to be measured with great precision using a proper dosimeter. Aluminum Oxide (Al 2 O 3 ) is a highly luminescent phosphor widely used for radiation dosimetry using thermoluminesence (TL) technique. In this work nanoparticles of this material activated by different elements like Eu, Tb, Dy, Cu and Ag were evaluated for their TL response to gamma rays irradiation. Tb doped sample is found to be the most sensitive sample, which could be selected for exposure to 85 MeV C 6+ ion beam in the fluence range 10 9 –10 13 ions/cm 2 . The obtained result shows that C ion beam irradiated sample has a simple glow curve structure with a prominent glow peak at around 230 °C. This glow curve has a dosimetric peak better than those induced by gamma rays. This glow peak exhibits a linear response in the range 10 9 –10 11 ions/cm 2 , corresponding to the equivalent absorbed doses 0.285–28.5 kGy. The absorbed doses, penetration depths and main energy loss were calculated using TRIM code based on the Monte Carlo simulation. The wide linear response of Al 2 O 3 :Tb nanoparticles along with the low fading makes this low cost nanomaterial a good candidate for C ion beam dosimetry. - Highlights: • Nanoparticles of Al 2 O 3 doped with Eu, Tb, Dy, Cu and Ag were synthesised. • They were evaluated for their TL response to gamma rays and C ion beam irradiation. • Tb doped sample is the most sensitive sample to gamma rays. • Al 2 O 3 :Tb was exposed to 85 MeV C 6+ ion beam in the fluence range 10 9 -10 13 ions/cm 2 . • The glow peak induced by C ions has a linear response in the range 10 9 -10 11 ions/cm 2

  4. Quantitative approach to relate dielectric constant studies with TSDC studies of 50 MeV Si ion irradiated kapton-H polymide

    International Nuclear Information System (INIS)

    Quamara, J.K.; Garg, Maneesha; Sridharbabu, Y.; Prabhavathi, T.

    2003-01-01

    Temperature and frequency dependent dielectric behaviour has been investigated for pristine and swift heavy ion irradiated (Si ion, 50 MeV energy) kapton-H polyimide in the temperature range of 30 to 250 deg C at frequencies 120 Hz, 1 kHz, 10 kHz and 100 kHz respectively. The dielectric relaxation behaviour of the same samples was also studied using thermally stimulated discharge current (TSDC) technique. A quantitative approach is developed using a well-known Clausius Mossotti equation to relate the TSDC findings to the dielectric constant studies. An overall increase in the dielectric constant of the irradiated samples are also in conformity to the TSDC findings. (author)

  5. Effects of 60 MeV C5+ ion irradiation on PmT-PVC and p-TSA doped PoT-PVC blends

    International Nuclear Information System (INIS)

    Lakshmi, G.B.V.S.; Siddiqui, Azher M.; Ali, Vazid; Kulriya, Pawan K.; Zulfequar, M.

    2008-01-01

    Poly(m-toluidine) (PmT) and Poly(o-toluidine) (PoT) have been synthesized from derivatives of aniline (m-toluidine), (o-toluidine) monomers by chemical oxidative polymerization method. After polymerization, PoT powder was doped with p-toluene sulphonic acid (p-TSA) and the polymer powders were blended with poly vinyl chloride (PVC) to achieve PmT and p-TSA doped PoT dispersed films. XRD, FTIR and UV-visible studies were carried out to get their structural changes and optical information. These blends were irradiated by 60 MeV C 5+ ions with different fluences. Post Irradiation XRD, FTIR and UV-visible spectroscopy were also performed on all films. On p-TSA doped PoT-PVC blends dc-conductivity measurements are also carried out before and after irradiation. The results show structural modifications which lead to changes in optical and electrical properties

  6. Anisotropic expansion and amorphization of Ga{sub 2}O{sub 3} irradiated with 946 MeV Au ions

    Energy Technology Data Exchange (ETDEWEB)

    Tracy, Cameron L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Department of Geological Sciences, Stanford University, Stanford, CA 94305 (United States); Lang, Maik [Department of Nuclear Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Severin, Daniel; Bender, Markus [GSI Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt (Germany); Trautmann, Christina [GSI Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt (Germany); Technische Universität Darmstadt, 64287 Darmstadt (Germany); Ewing, Rodney C. [Department of Geological Sciences, Stanford University, Stanford, CA 94305 (United States)

    2016-05-01

    The structural response of β-Ga{sub 2}O{sub 3} to irradiation-induced electronic excitation was investigated. A polycrystalline pellet of this material was irradiated with 946 MeV Au ions and the resulting structural modifications were characterized using in situ X-ray diffraction analysis at various ion fluences, up to 1 × 10{sup 13} cm{sup −2}. Amorphization was induced, with the accumulation of the amorphous phase following a single-impact mechanism in which each ion produces an amorphous ion track along its path. Concurrent with this phase transformation, an increase in the unit cell volume of the material was observed and quantified using Rietveld refinement. This unit cell expansion increased as a function of ion fluence before saturating at 1.8%. This effect is attributed to the generation of defects in an ion track shell region surrounding the amorphous track cores. The unit cell parameter increase was highly anisotropic, with no observed expansion in the [0 1 0] direction. This may be due to the structure of β-Ga{sub 2}O{sub 3}, which exhibits empty channels of connected interstitial sites oriented in this direction.

  7. Irradiation creep under 60 MeV alpha irradiation

    International Nuclear Information System (INIS)

    Reiley, T.C.; Shannon, R.H.; Auble, R.L.

    1980-01-01

    Accelerator-produced charged-particle beams have advantages over neutron irradiation for studying radiation effects in materials, the primary advantage being the ability to control precisely the experimental conditions and improve the accuracy in measuring effects of the irradiation. An apparatus has recently been built at ORNL to exploit this advantage in studying irradiation creep. These experiments employ a beam of 60 MeV alpha particles from the Oak Ridge Isochronous Cyclotron (ORIC). The experimental approach and capabilities of the apparatus are described. The damage cross section, including events associated with inelastic scattering and nuclear reactions, is estimated. The amount of helium that is introduced during the experiments through inelastic processes and through backscattering is reported. Based on the damage rate, the damage processes and the helium-to-dpa ratio, the degree to which fast reactor and fusion reactor conditions may be simulated is discussed. Recent experimental results on the irradiation creep of type 316 stainless steel are presented, and are compared to light ion results obtained elsewhere. These results include the stress and temperature dependence of the formation rate under irradiation. The results are discussed in relation to various irradiation creep mechanisms and to damage microstructure as it evolves during these experiments. (orig.)

  8. Modification of structural and magnetic properties of soft magnetic multi-component metallic glass by 80 MeV {sup 16}O{sup 6+} ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Kane, S.N., E-mail: kane_sn@yahoo.com [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Shah, M.; Satalkar, M.; Gehlot, K. [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Kulriya, P.K.; Avasthi, D.K. [Inter-University Accelerator Centre, P.O. Box No. 10502, Aruna Asaf Ali Marg, New Delhi 110067 (India); Sinha, A.K. [Raja Ramanna Centre for Advanced Technology, P.O. CAT, Indore 452013 (India); Modak, S.S. [Physics Department, Jaypee University of Eng. & Tech., A-B Road, Raghogarh, Guna 473226 (India); Ghodke, N.L.; Reddy, V.R. [UGC-DAE CSR, University Campus, Khandwa Road, Indore 452001 (India); Varga, L.K. [RISSPO, Hungarian Academy of Sciences, P.O. Box 49, 1525 Budapest (Hungary)

    2016-07-15

    Effect of 80 MeV {sup 16}O{sup 6+} ion irradiation in amorphous Fe{sub 77}P{sub 8}Si{sub 3}C{sub 5}Al{sub 2}Ga{sub 1}B{sub 4} alloy is reported. Electronic energy loss induced modifications in the structural and, magnetic properties were monitored by synchrotron X-ray diffraction (SXRD), Mössbauer and, magnetic measurements. Broad amorphous hump seen in SXRD patterns reveals the amorphous nature of the studied specimens. Mössbauer measurements suggest that: (a) alignment of atomic spins within ribbon plane, (b) changes in average hyperfine field suggests radiation-induced decrease in the inter atomic distance around Mössbauer (Fe) atom, (c) hyperfine field distribution confirms the presence of non-magnetic elements (e.g. – B, P, C) in the first near-neighbor shell of the Fe atom, thus reducing its magnetic moment, and (d) changes in isomer shift suggests variation in average number of the metalloid near neighbors and their distances. Minor changes in soft magnetic behavior – watt loss and, coercivity after an irradiation dose of 2 × 10{sup 13} ions/cm{sup 2} suggests prospective application of Fe{sub 77}P{sub 8}Si{sub 3}C{sub 5}Al{sub 2}Ga{sub 1}B{sub 4} alloy as core material in accelerators (radio frequency cavities).

  9. TSD current investigations in pristine and 100 MeV Ni-ion irradiated PET/0.3 PHB polymer liquid crystal

    International Nuclear Information System (INIS)

    Quamara, J.K.; Singh, Nafa; Prabhavathi, T.; Sridharbabu, Y.

    2002-01-01

    The dielectric relaxations investigations have been carried out in pristine as well as 100 MeV 58 Ni ion irradiated (PELLETRON facility, Nuclear Science Center, New Delhi) PET/0.3 PHB PLC samples. Thermally stimulated depolarization current technique (TSDC) has been employed for this purpose. The plc samples were polarized at 180 deg C under the influence of various polarizing fields following the usual method. Three current maxima are observed around 35deg, 120deg and 155degC which are ascribed as β', β and α transitions. These transitions are mainly due to the fast reacting dipoles of PHB regions, dipolar character due to carbonyl groups in PET rich phase and to the cold crystallization of PET. The results confirm the biphasic nature of this plc. The high energy irradiation influences both β and α transitions. Increase in fluence shifts the β peak as well as α peak towards higher temperature. This confirms that high energy irradiation has not only affected the carbonyl groups but has created new phases. (author)

  10. Investigation of morphological, structural, and mechanical characteristics of Zircaloy-4 irradiated with 3.5 MeV hydrogen ions beam

    Science.gov (United States)

    Rafique, Mohsin; Butt, M. Z.; Ahmad, Sajjad

    2017-09-01

    Zircaloy-4 specimens were irradiated with 3.5 MeV hydrogen ions (dose range: 1  ×  1013 H+1 cm-2 to 1  ×  1015 H+1 cm-2) using a Pelletron accelerator. FESEM studies reveal formation of hydrogen micro-bubbles, bubbles induced blisters of irregular shapes, and development of cracks on the specimen surface, as in the case of pure zirconium. However, for the highest irradiation dose of 1  ×  1015 H+1 cm-2, agglomeration of flower-shape blisters is observed. XRD analysis shows that the most preferentially oriented crystallographic plane is (0 0 4) with texture coefficient values 1.832-2.308 depending on the ions dose. Its diffraction peak intensity first decreases with the increase in ions dose up to 5  ×  1013 H+1 cm-2 and later increases up to 1  ×  1015 H+1 cm-2. Opposite is found in case of diffraction peak width. Crystallite size and lattice strain determined by Williamson-Hall analysis display a linear relationship between the two with positive slope. Mechanical strength, namely yield stress (YS), ultimate tensile strength (UTS), and fracture stress (FS), increases sharply with ions dose up to 5  ×  1013 H+1 cm-2. For 1  ×  1014 H+1 cm-2 dose there is a sudden drop of stress to a lowest value and then a slow steady increase in stress up to the highest dose 1  ×  1015 H+1 cm-2. Same pattern is followed by uniform elongation and total elongation. All three stress parameters YS, UTS, and FS follow Inverse Hall-Petch relation.

  11. A study of the degradation of polymers irradiated by Cn+ and On+ 9.6 MeV heavy ions

    Czech Academy of Sciences Publication Activity Database

    Mikšová, Romana; Macková, Anna; Malinský, Petr; Slepička, P.; Švorčík, V.

    2015-01-01

    Roč. 122, DEC (2015), s. 110-121 ISSN 0141-3910 R&D Projects: GA MŠk LM2011019; GA ČR GA15-01602S Institutional support: RVO:61389005 Keywords : energy loss * heavy ions * polymers * RBS/ERDA methods * AFM method Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 3.120, year: 2015

  12. Formation of dislocations and hardening of LiF under high-dose irradiation with 5-21 MeV {sup 12}C ions

    Energy Technology Data Exchange (ETDEWEB)

    Zabels, R.; Manika, I.; Maniks, J.; Grants, R. [Institute of Solid State Physics, University of Latvia, Riga (Latvia); Schwartz, K. [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Dauletbekova, A.; Baizhumanov, M. [L.N. Gumilyov Eurasian National University, Astana (Kazakhstan); Zdorovets, M. [Institute of Nuclear Physics, Almaty (Kazakhstan)

    2017-05-15

    The emergence of dislocations and hardening of LiF crystals irradiated to high doses with {sup 12}C ions have been investigated using chemical etching, AFM, nanoindentation, and thermal annealing. At fluences ensuring the overlapping of tracks (Φ ≥6 x 10{sup 11} ions/cm{sup 2}), the formation of dislocation-rich structure and ion-induced hardening is observed. High-fluence (10{sup 15} ions/cm{sup 2}) irradiation with {sup 12}C ions causes accumulation of extended defects and induces hardening comparable to that reached by heavy ions despite of large differences in ion mass, energy, energy loss, and track morphology. The depth profiles of hardness indicate on a notable contribution of elastic collision mechanism (nuclear loss) in the damage production and hardening. The effect manifests at the end part of the ion range and becomes significant at high fluences (≥10{sup 14} ions/cm{sup 2}). (orig.)

  13. Effect of irradiation spectrum on the microstructure of ion-irradiated Al2O3

    International Nuclear Information System (INIS)

    Zinkle, S.J.

    1994-01-01

    Polycrystalline samples of alpha-alumina have been irradiated with various ions ranging from 3.6 MeV Fe + to 1 MeV H + ions at 650 C. Cross-section transmission electron microscopy was used to investigate the depth-dependent microstructure of the irradiated specimens. The microstructure following irradiation was observed to be dependent on the irradiation spectrum. In particular, defect cluster nucleation was effectively suppressed in specimens irradiated with light ions such as 1 MeV H + ions. On the other hand, light ion irradiation tended to accelerate the growth rate of dislocation loops. The microstructural observations are discussed in terms of ionization enhanced diffusion processes

  14. Effect of 120 MeV 28Si9+ ion irradiation on structural and magnetic properties of NiFe2O4 and Ni0.5Zn0.5Fe2O4

    Science.gov (United States)

    Sharma, R.; Raghuvanshi, S.; Satalkar, M.; Kane, S. N.; Tatarchuk, T. R.; Mazaleyrat, F.

    2018-05-01

    NiFe2O4, Ni0.5Zn0.5Fe2O4 samples were synthesized using sol-gel auto combustion method, and irradiated by using 120 MeV 28Si9+ ion with ion fluence of 1×1012 ions/cm2. Characterization of pristine, irradiated samples were done using X-Ray Diffraction (XRD), Field Emission Scanning Microscopy (FE-SEM), Energy Dispersive X-ray Analysis (EDAX) and Vibrating Sample Magnetometer (VSM). XRD validates the single phase nature of pristine, irradiated Ni- Zn nano ferrite except for Ni ferrite (pristine, irradiated) where secondary phases of α-Fe2O3 and Ni is observed. FE- SEM images of pristine Ni, Ni-Zn ferrite show inhomogeneous nano-range particle size distribution. Presence of diamagnetic ion (Zn2+) in NiFe2O4 increases oxygen positional parameter (u 4¯3m ), experimental, theoretical saturation magnetization (Msexp., Msth.), while decreases the grain size (Ds) and coercivity (Hc). With irradiation Msexp., Msth. increases but not much change are observed in Hc. New antistructure modeling for the pristine, irradiated Ni and Ni-Zn ferrite samples was used for describing the surface active centers.

  15. Structural, surface potential and optical studies of AlGaN based double heterostructures irradiated by 120 MeV Si{sup 9+} swift heavy ions

    Energy Technology Data Exchange (ETDEWEB)

    Arivazhagan, P., E-mail: arivazhaganau2008@gmail.com [Crystal Growth Centre, Anna University, Chennai, 600 025 (India); Ramesh, R.; Balaji, M. [Crystal Growth Centre, Anna University, Chennai, 600 025 (India); Asokan, K. [Inter-University Accelerator Centre (IUAC), New Delhi (India); Baskar, K. [Crystal Growth Centre, Anna University, Chennai, 600 025 (India)

    2016-09-15

    The Al{sub 0.33}Ga{sub 0.77}N/Al{sub 0.14}Ga{sub 0.86}N based double heterostructure was irradiated using Si{sup 9+} ion at room temperature (RT) and liquid nitrogen temperature (LNT) with four dissimilar ion fluence. The effect of Si{sup 9+} ion irradiation in dislocation densities and in-plane strain of GaN layer were discussed. The in-plane strain values of Al{sub x}Ga{sub 1-x}N layers were calculated from asymmetric reciprocal space mapping (RSM). The surface modification and the variation in phase shift on Al{sub 0.33}Ga{sub 0.77}N surfaces due to the irradiation were measured by Electrostatic Force Microscopy (EFM). The capacitance of the tip-sample system was determined from EFM. The band edge emissions of heterostructures were measured by the room temperature phototluminescence (PL) and the shift in the Al{sub 0.14}Ga{sub 0.86}N active layer emission peaks towards the low energy side at low fluence ion irradiation has been noted. - Highlights: • Effects of Si{sup 9+} ion irradiation on AlGaN double heterostructures were investigated. • Dislocation densities of GaN reduced at liquid nitrogen temperature irradiation. • Variation in phase shift on Al{sub 0.33}Ga{sub 0.77}N surfaces was measured by EFM. • Capacitance per unit area values of AFM tip-sample surface system were calculated. • Si{sup 9+} irradiations play an important role to tune the energy gap in Al{sub 0.14}Ga{sub 0.86}N.

  16. Ion beam irradiation effects on aromatic polymers

    International Nuclear Information System (INIS)

    Shukushima, Satoshi; Ueno, Keiji

    1995-01-01

    We studied the optical and thermal properties of aromatic polymer films which had been irradiated with 1 MeV H + , H 2 + and He + ions. The examined aromatic polymers were polyetherether ketone(PEEK), polyetherimide(PEI), polyether sulfon(PES), polysulfon(PSF), and polyphenylene sulfide(PPS). The optical densities at 300nm of PES and PSF greatly increased after the irradiation. The optical densities at 400nm of all the examined polymer lineally increased with the irradiation dose. The PEEK film which had been irradiated with 1 MeV H + was not deformed above melting point. This demonstrates that cross-linking occurs in PEEK films by ion beam irradiation. As for the effects, depending on the mass of the irradiated ions, it was found that the ions with a high mass induced larger effects on the aromatic polymers for the same absorption energy. (author)

  17. Degradation of PET, PEEK and PI induced by irradiation with 150 keV Ar+ and 1.76 MeV He+ ions

    Czech Academy of Sciences Publication Activity Database

    Macková, Anna; Havránek, Vladimír; Švorčík, V.; Suzuki, T.; Djourelov, N.

    2005-01-01

    Roč. 240, 1/2 (2005), s. 245-249 ISSN 0168-583X R&D Projects: GA MŠk(CZ) OC 527.100 Institutional research plan: CEZ:AV0Z10480505 Keywords : irradiated polymers * ion beam modification * ERDA Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.181, year: 2005

  18. The Influence of Deformation on the Surface Structure of Silicon Under Irradiation by $^{86}$Kr Ions with Energy 253 MeV

    CERN Document Server

    Vlasukova, L A; Hofmann, A; Komarov, F F; Semina, V K; Yuvchenko, V N

    2006-01-01

    The influence of the previously produced deformation in silicon structure by means of macro-scratch surface covering on the sputtering processes under following irradiation by swift $^{86}$Kr ions is studied. The significant leveling of surface relief of irradiated silicon was observed using atomic force microscopy method (AFM), in particular it takes place for smoothing of micro-scratches produced by mechanical polishing of silicon initial plates. The experimental studies of irradiated surface allowed one to conclude that it is impossible to explain the surface changes only by elastic cascade mechanism as it was calculated using the computer code TRIM-98, because the calculated sputtered layers of silicon at ion fluence $\\Phi_{\\rm Kr} = 1{.}3\\cdot10^{14}$ ion/cm$^{2}$ should be $\\Delta H_{\\rm Sputtering}^{\\rm Kr} = 5{.}5\\cdot10^{-3 }${\\AA}. Correspondingly, the surface changes should be explained by one of mechanisms of inelastic sputtering. The macro-cracks on the surface were observed near the scratches. I...

  19. Colloidal assemblies modified by ion irradiation

    NARCIS (Netherlands)

    Snoeks, E.; Blaaderen, A. van; Dillen, T. van; Kats, C.M. van; Velikov, K.P.; Brongersma, M.L.; Polman, A.

    2001-01-01

    Spherical SiO2 and ZnS colloidal particles show a dramatic anisotropic plastic deformation under 4 MeV Xe ion irradiation, that changes their shape into oblate into oblate ellipsional, with an aspect ratio that can be precisely controlled by the ion fluence. The 290 nm and 1.1 um diameter colloids

  20. Effects of 3.1-MeV proton and 1-GeV Au-ion irradiation on the magnetic flux noise and critical current of YBa2Cu3O7-δ

    International Nuclear Information System (INIS)

    Shaw, T.J.; Clarke, J.; van Dover, R.B.; Schneemeyer, L.F.; White, A.E.

    1996-01-01

    We have used a dc superconducting quantum interference device to measure the spectral density of magnetic flux noise, S Φ (f), generated by vortex motion in crystals of YBa 2 Cu 3 O 7-δ (YBCO) both before and after irradiation with 3.1-MeV protons and 1-GeV Au ions. In addition, we have studied the effects of irradiation on the critical current J c of the same samples. Both types of irradiation reduced S Φ (f) at most temperatures and magnetic fields and increased J c at all temperatures and magnetic fields. By measuring S Φ (f) versus temperature, we extract the distribution of vortex pinning energies, D(U 0 ). Both crystals have peaks in D(U 0 ) near 0.1 eV and 0.2 eV before irradiation, and a much reduced peak near 0.1 eV after irradiation. The noise level after either kind of irradiation was substantially higher than in an unirradiated YBCO film. copyright 1996 The American Physical Society

  1. Comparison of 3 MeV C+ ion-irradiation effects between the nuclear graphites made of pitch and petroleum cokes

    International Nuclear Information System (INIS)

    Chi, Se-Hwan; Kim, Gen-Chan

    2008-01-01

    Three million electron volt C + irradiation effects on the microstructure (crystallinity, crystal size), mechanical properties (hardness, Young's modulus) and oxidation of IG-110 (petroleum coke) and IG-430 (pitch coke) nuclear graphites were compared based on the materials characteristics (degree of graphitization (DOG), density, porosity, type of coke, Mrozowski cracks) of the grades and the ion-irradiation conditions. The specimens were irradiated up to ∼19 dpa at room temperature. Differences in the as-received microstructure were examined by Raman spectroscopy, X-ray diffraction (XRD), optical microscope (OM) and transmission electron microscope (TEM). The ion-induced changes in the microstructure, mechanical properties and oxidation characteristics were examined by the Raman spectroscopy, microhardness and Young's modulus measurements, and scanning electron microscope (SEM). Results of the as-received microstructure condition show that the DOG of the grades appeared the same at 0.837. The size of Mrozowski cracks appeared larger in the IG-110 of the higher open and total porosity than the IG-430. After an irradiation, the changes in the crystallinity and the crystallite size, both estimated by the Raman spectrum parameters, appeared large for the IG-430 and the IG-110, respectively. The hardness had increased after an irradiation, but, the hardness increasing behaviors were reversed at around 14 dpa. Thus, the IG-430 showed a higher increase before 14 dpa, but the IG-110 showed a higher increase after 14 dpa. No-clear differences in the increase of the Young's modulus were observed between the grades mainly due to a scattering in the measurements results. The IG-110 showed a higher oxidation rate than the IG-430 both before and after an irradiation. Besides the density and porosity, a possible contribution of the well-developed Mrozowski cracks in the IG-110 was noted for the observation. All the comparisons show that, even when the differences between the

  2. Comparison of 3 MeV C + ion-irradiation effects between the nuclear graphites made of pitch and petroleum cokes

    Science.gov (United States)

    Chi, Se-Hwan; Kim, Gen-Chan

    2008-10-01

    Three million electron volt C + irradiation effects on the microstructure (crystallinity, crystal size), mechanical properties (hardness, Young's modulus) and oxidation of IG-110 (petroleum coke) and IG-430 (pitch coke) nuclear graphites were compared based on the materials characteristics (degree of graphitization (DOG), density, porosity, type of coke, Mrozowski cracks) of the grades and the ion-irradiation conditions. The specimens were irradiated up to ˜19 dpa at room temperature. Differences in the as-received microstructure were examined by Raman spectroscopy, X-ray diffraction (XRD), optical microscope (OM) and transmission electron microscope (TEM). The ion-induced changes in the microstructure, mechanical properties and oxidation characteristics were examined by the Raman spectroscopy, microhardness and Young's modulus measurements, and scanning electron microscope (SEM). Results of the as-received microstructure condition show that the DOG of the grades appeared the same at 0.837. The size of Mrozowski cracks appeared larger in the IG-110 of the higher open and total porosity than the IG-430. After an irradiation, the changes in the crystallinity and the crystallite size, both estimated by the Raman spectrum parameters, appeared large for the IG-430 and the IG-110, respectively. The hardness had increased after an irradiation, but, the hardness increasing behaviors were reversed at around 14 dpa. Thus, the IG-430 showed a higher increase before 14 dpa, but the IG-110 showed a higher increase after 14 dpa. No-clear differences in the increase of the Young's modulus were observed between the grades mainly due to a scattering in the measurements results. The IG-110 showed a higher oxidation rate than the IG-430 both before and after an irradiation. Besides the density and porosity, a possible contribution of the well-developed Mrozowski cracks in the IG-110 was noted for the observation. All the comparisons show that, even when the differences between the

  3. Comparison of 3 MeV C+ Ion-Irradiation Effects between The Nuclear Graphites made of Pitch and Petroleum Cokes

    International Nuclear Information System (INIS)

    Se-Hwan, Chi; Gen-Chan, Kim; Jong-Hwa, Chang

    2006-01-01

    Currently, all the commercially available nuclear graphite grades are being made from two different cokes, i.e., petroleum coke or coal-tar pitch coke, and a coal-tar pitch binder. Of these, since the coke composes most of the graphite volume, i.e., > 70 %, it is understood that a physical, chemical, thermal, and mechanical property as well as an irradiation-induced property change will be strongly dependent on the type of coke. To obtain first-hand information on the effects of the coke type, i.e., petroleum or pitch, on the irradiation sensitivity of graphite, specimens made of IG-110 of petroleum coke and IG-430 of pitch coke were irradiated up to ∼ 19 dpa by 3 MeV C + at room temperature, and the irradiation-induced changes in the hardness, Young's modulus, Raman spectrum, and oxidation properties were characterized. Results of the TEM show that the size and density of the Mrozowski cracks appeared to be far larger and higher in the IG-110 than the IG-430. Results of the hardness test revealed a slightly higher increase in the IG-430 than the IG-110 by around 10 dpa, and the Raman spectrum measurement showed a higher (FWHM) D /(FWHM) G value for IG-430 for 0.02 ∼ 0.25 dpa. Both the hardness and Raman measurement may imply a higher irradiation sensitivity of the IG-430 than the IG-110. Results of the Young's modulus measurements showed a large data scattering, which prevented us from estimating the differences between the grades. Oxidation experiments using a TG-DTA under a flow of dry air/He = 2.5 % (flow rate: 40 CC/min) at 750 and 1000 deg C show that the IG-110 of the petroleum coke exhibits a far higher oxidation rate than the IG-430. The discrepancy between the oxidation rate of the two grades increased with an increase in the oxidation temperature and the dose. Oxidized surface pore area was larger for IG-110. Judging from the results obtained from the present experimental conditions, the irradiation sensitivity appeared to be dependent on the degree

  4. Positron lifetime studies of 100-MeV oxygen irradiated Pb-doped Bi-2223 superconductors

    NARCIS (Netherlands)

    Banerjee, T.; Viswanath, R.N.; Kanjilal, D.; Kumar, R.; Ramasamy, S.

    2000-01-01

    Positron lifetime studies have been carried out for unirradiated and 100-MeV oxygen ion irradiated Pb-doped Bi-2223 superconductors. The analysis of positron lifetime spectra revealed three lifetime components: a short lifetime, τ1 = 153–196 ps; an intermediate lifetime, τ2 = 269–339 ps; and a long

  5. Ion irradiated graphite exposed to fusion-relevant deuterium plasma

    International Nuclear Information System (INIS)

    Deslandes, Alec; Guenette, Mathew C.; Corr, Cormac S.; Karatchevtseva, Inna; Thomsen, Lars; Ionescu, Mihail; Lumpkin, Gregory R.; Riley, Daniel P.

    2014-01-01

    Graphite samples were irradiated with 5 MeV carbon ions to simulate the damage caused by collision cascades from neutron irradiation in a fusion environment. The ion irradiated graphite samples were then exposed to a deuterium plasma in the linear plasma device, MAGPIE, for a total ion fluence of ∼1 × 10 24 ions m −2 . Raman and near edge X-ray absorption fine structure (NEXAFS) spectroscopy were used to characterize modifications to the graphitic structure. Ion irradiation was observed to decrease the graphitic content and induce disorder in the graphite. Subsequent plasma exposure decreased the graphitic content further. Structural and surface chemistry changes were observed to be greatest for the sample irradiated with the greatest fluence of MeV ions. D retention was measured using elastic recoil detection analysis and showed that ion irradiation increased the amount of retained deuterium in graphite by a factor of four

  6. High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

    Science.gov (United States)

    Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

    2018-03-01

    The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

  7. Effects of high-energy (MeV) ion implantation of polyester films

    International Nuclear Information System (INIS)

    Ueno, Keiji; Matsumoto, Yasuyo; Nishimiya, Nobuyuki; Noshiro, Mitsuru; Satou, Mamoru

    1991-01-01

    The effects of high-energy ion beam irradiation on polyester (PET) films using a 3 MeV tandem-type ion beam accelerator were studied. O, Ni, Pt, and Au as ion species were irradiated at 10 14 -10 15 ions/cm 2 on 50 μm thick PET films. Physical properties and molecular structure changes were studied by the surface resistivity measurements and RBS. The surface resistivity decreases with an increase in irradiation dose. At 10 15 ions/cm 2 irradiation, the surface resistivity is 10 8 Ω/□. According to RBS and XPS analyses, some carbon and oxygen atoms in the PET are replaced by implanted ions and the -C=O bonds are destroyed easily by the ion beam. (orig.)

  8. Colloidal assemblies modified by ion irradiation

    OpenAIRE

    Snoeks, E.; Blaaderen, A. van; Dillen, T. van; Kats, C.M. van; Velikov, K.P.; Brongersma, M.L.; Polman, A.

    2001-01-01

    Spherical SiO2 and ZnS colloidal particles show a dramatic anisotropic plastic deformation under 4 MeV Xe ion irradiation, that changes their shape into oblate into oblate ellipsional, with an aspect ratio that can be precisely controlled by the ion fluence. The 290 nm and 1.1 um diameter colloids were deposited on a Si substrate and irradiated at 90 K, using fluences in the range 3*10^(13)-8*10^(14) cm^(-2). The transverse particle diameter shows a linear increase with ion fluence, while the...

  9. Positive ion irradiation facility

    International Nuclear Information System (INIS)

    Braby, L.A.

    1985-01-01

    Many questions about the mechanisms of the response of cells to ionizing radiation can best be investigated using monoenergetic heavy charged particle beams. Questions of the role of different types of damage in the LET effect, for example, are being answered by comparing repair kinetics for damage induced by electrons with that produced by helium ions. However, as the models become more sophicated, the differences between models can be detected only with more precise measurements, or by combining high- and low-LET irradiations in split-dose experiments. The design of the authors present cell irradiation beam line has limited the authors to irradiating cells in a partial vacuum. A new way to mount the dishes and bring the beam to the cells was required. Several means of irradiating cells in mylar-bottom dishes have been used at other laboratories. For example at the RARAF Facility, the dual ion experiments are done with the dish bottom serving as the beam exit window but the cells are in a partial vacuum to prevent breaking the window. These researchers have chosen instead to use the dish bottom as the beam window and to irradiate the entire dish in a single exposure. A special, very fast pumping system will be installed at the end of the beam line. This system will make it possible to irradiate cells within two minutes of installing them in the irradiation chamber. In this way, the interaction of electron and ion-induced damage in Chlamydomonas can be studied with time between doses as short as 5 minutes

  10. MEV Energy Electrostatic Accelerator Ion Beam Emittance Measurement

    OpenAIRE

    I.G. Ignat’ev; M.I. Zakharets; S.V. Kolinko; D.P. Shulha

    2014-01-01

    The testing equipment was designed, manufactured and tried out permitting measurements of total current, current profile and emittance of an ion beam extracted from the ion beam. MeV energy electrostatic accelerator ion H + beam emittance measurement results are presented.

  11. Highly Stripped Ion Sources for MeV Ion Implantation

    Energy Technology Data Exchange (ETDEWEB)

    Hershcovitch, Ady

    2009-06-30

    Original technical objectives of CRADA number PVI C-03-09 between BNL and Poole Ventura, Inc. (PVI) were to develop an intense, high charge state, ion source for MeV ion implanters. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MV LINAC is used for acceleration of a few rnA. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform (de acceleration) to generate high-energy ion beams for implantation. This de acceleration of ions will be far more efficient (in energy utilization). The resultant implanter will be smaller in size. It will generate higher quality ion beams (with lower emittance) for fabrication of superior semiconductor products. In addition to energy and cost savings, the implanter will operate at a lower level of health risks associated with ion implantation. An additional aim of the project was to producing a product that can lead to long­ term job creation in Russia and/or in the US. R&D was conducted in two Russian Centers (one in Tomsk and Seversk, the other in Moscow) under the guidance ofPVI personnel and the BNL PI. Multiple approaches were pursued, developed, and tested at various locations with the best candidate for commercialization delivered and tested at on an implanter at the PVI client Axcelis. Technical developments were exciting: record output currents of high charge state phosphorus and antimony were achieved; a Calutron-Bemas ion source with a 70% output of boron ion current (compared to 25% in present state-of-the-art). Record steady state output currents of higher charge state phosphorous and antimony and P ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb {sup 4 +}, Sb{sup 5+}, and Sb{sup 6+} respectively. Ultimate commercialization goals did not succeed (even though a number of the products like high

  12. 1.5 MeV Kr+ irradiation of polycrystalline Ge

    International Nuclear Information System (INIS)

    Wang, L.M.; Birtcher, R.C.; Rehn, L.E.

    1990-01-01

    This paper reports 1.5 MeV Kr + irradiation of polycrystalline Ge at room temperature, and subsequent annealing carried out with in situ TEM observations. After a Kr + dose of 1.2 x 10 14 ions/cm 2 , Ge in the electron transparent region was completely amorphized. Continuous irradiation of the amorphized Ge resulted in a high density of small cavities. These cavities, first observed after 7 x 10 14 ions/cm 2 with an average diameter of ∼3 nm, grew into large (∼50 nm) irregular-shaped holes, transforming the irradiated Ge into a sponge-like material after 8.5 x 10 15 ions/cm 2 . The crystallization temperature and the morphology of the crystallized Ge after annealing were found to be dependent on the Kr + dose. The sponge-like structure was retained after crystallization at ∼600 degrees C

  13. Dose determination of 600 MeV proton irradiated specimens

    International Nuclear Information System (INIS)

    Gavillet, D.

    1991-01-01

    The calculation method for the experimental determination of the atomic production cross section from the γ activity measurements are presented. This method is used for the determination of some isotope production cross sections for 600 MeV proton irradition in MANET steel, copper, tungsten, gold and titanium. The results are compared with some calculation. These values are used to determine the dose of specimens irradiated in the PIREX II facility. The results are discussed in terms of the irradiation parameters. A guide for the use of the production cross section determined in the dosimetry experiment are given. (author) tabs., refs

  14. Diffusion of interstitial atoms in FCC metals after irradiation with 2 MeV electrons

    International Nuclear Information System (INIS)

    Kornmann, H.

    1980-01-01

    Selfdiffusion in nickel after electron irradiation has been restudied. The diffusion velocity near the surface and the diffusion constant in the interior of the crystal have been determined as a function of radiation flux and temperature. A special method for the measurement of diffusion has been improved, which is based on radioactive tracer atoms for indication and on ion etching for the removal of thin films. To improve additionally the accuracy of the technique tracer atoms are induced into the crystal by thermal diffusion and then irradiated with 2 MeV electrons. (orig./GSCH) [de

  15. Heavy ions amorphous semiconductors irradiation study

    International Nuclear Information System (INIS)

    Benmalek, M.

    1978-01-01

    The behavior of amorphous semiconductors (germanium and germanium and arsenic tellurides) under ion bombardment at energies up to 2 MeV was studied. The irradiation induced modifications were followed using electrical parameter changes (resistivity and activation energy) and by means of the transmission electron microscopy observations. The electrical conductivity enhancement of the irradiated samples was interpreted using the late conduction theories in amorphous compounds. In amorphous germanium, Electron Microscopy showed the formations of 'globules', these defects are similar to voids observed in irradiated metals. The displacement cascade theory was used for the interpretation of the irradiation induced defects formation and a coalescence mechanism of growth was pointed out for the vacancy agglomeration [fr

  16. 120 MeV Ag ion induced effects in Au/HfO2/Si MOSCAPs

    Science.gov (United States)

    Manikanthababu, N.; Prajna, K.; Pathak, A. P.; Rao, S. V. S. Nageswara

    2018-05-01

    HfO2/Si thinfilms were deposited by RF sputtering technique. 120 MeV Ag ion irradiation has been used to study the electrical properties of Au/HfO2/Si MOSCAPs. SHI (120 MeV Ag) induced annealing, defects creation and intermixing effects on the electrical properties of these systems have been studied. Here, we have observed that the high electronic excitation can cause a significant reduction of leakage currents in these MOSCAP devices. Various quantum mechanical tunneling phenomenon has been observed from the I-V characteristics.

  17. MeV ion beam interaction with polymer films containing cross-linking agents

    International Nuclear Information System (INIS)

    Evelyn, A. L.

    1999-01-01

    Polymer films containing cross linking enhancers were irradiated with MeV alpha particles to determine the effects of MeV ion beam interaction on these materials. The contributed effects from the electronic and nuclear stopping powers were separated by irradiating stacked thin films of polyvinyl chloride (PVC), polystyrene (PS) and polyethersulfone (PES). This layered system allowed most of the effects of the electronic energy deposited to be experienced by the first layers and the last layers to receive most of the effects of the nuclear stopping power. RGA, Raman microprobe analysis, RBS and FTIR measured changes in the chemical structures of the irradiated films. The characterization resolved the effects of the stopping powers on the PVC, PS and PES and the results were compared with those from previously studied polymers that did not contain any cross linking agents

  18. Radiation hardening of metals irradiated by heavy ions

    International Nuclear Information System (INIS)

    Didyk, A.Yu.; Skuratov, V.A.; Mikhajlova, N.Yu.; Regel', V.R.

    1988-01-01

    The damage dose dependence in the 10 -4 -10 -2 dpa region of radiation hardening of Al, V, Ni, Cu irradiated by xenon ions with 124 MeV energy is investigated using the microhardness technique and transmission electron microscope. It is shown that the pure metals radiation hardening is stimulated for defects clusters with the typical size less than 5 nm, as in the case of neutron and the light charge ion irradiation

  19. 0,01-5 MeV heavy ion accelerators

    International Nuclear Information System (INIS)

    Golubev, V.P.; Ivanov, A.S.; Nikiforov, S.A.; Svin'in, M.P.; Tarvid, G.V.; Troshikhin, A.G.; Fedotov, M.T.

    1983-01-01

    The results of development of an accelerating complex on the base of the UP-2-1 heavy ion charge exchange accelerator and IMPLANT-500 high-voltage heavy ion accelerator are given. The accelerating complex provides overlapping of the 0.01 MeV to 5 MeV energy range at accelerated beam currents of 10 -3 -10 -6 A order. The structural features of accelerators and their basic units and systems are considered. The UP-2-1 accelerator is designed for researches in the field of experimental physics and applied problem solutions. The IMPLANT-500 accelerator is designed for commercial ion-beam facilities with closed loop of silicon plate treatment

  20. Effect of swift heavy ion-irradiation on Cr/Fe/Ni multilayers

    International Nuclear Information System (INIS)

    Gupta, Ratnesh; Gupta, Ajay; Avasthi, D.K.; Principi, G.; Tosello, C.

    1999-01-01

    A multilayer film having overall composition Fe 50 Cr 25 Ni 25 , was irradiated successively by 80 MeV Si ions and Ag ions of 150 and 200 MeV energy. The energy deposited in the multilayer in the form of electronic excitations results in significant modification at the interfaces. The interfacial roughness increases in the system after the irradiations as revealed by X-ray reflectivity measurement. Moessbauer measurements provide evidence of intermixing after the irradiation by 200 MeV Ag ions. Comparison of heavy ion irradiated multilayer has been done with annealed and low energy ion irradiated samples. Results suggest that the phases formed at the interfaces of iron as a result of electronic energy loss are similar to those in the cases of thermal diffusion and keV energy ion beam irradiation

  1. Structural and optical studies of 100 MeV Au irradiated thin films of tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Jaiswal, Manoj Kumar [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Kumar, Rajesh, E-mail: rajeshkumaripu@gmail.com [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078 (India)

    2013-11-01

    Thin films of tin(IV) oxide (SnO{sub 2}) of 100 nm thickness were grown on silicon (1 0 0) matrices by electron beam evaporation deposition technique under high vacuum. The thicknesses of these films were monitored by piezo-sensor attached to the deposition chamber. Nanocrystallinity is achieved in these thin films by 100 MeV Au{sup 8+} using 1 pnA current at normal incidence with ion fluences varying from 1 × 10{sup 11} ions/cm{sup 2} to 5 × 10{sup 13} ions/cm{sup 2}. Swift Heavy Ion beam irradiation was carried out by using 15 UD Pelletron Accelerator at IUAC, New Delhi, India. Optical studies of pristine and ion irradiated thin films were characterized by UV–Visible spectroscopy and Fourier Transform Infrared (FTIR) spectroscopy. Prominent peak at 610 cm{sup −1} in FTIR spectrum confirmed the O–Sn–O bonding of tin(IV) oxide. For Surface topographical studies and grain size calculations, these films were characterized by Atomic Force Microscope (AFM) using Nanoscope III-A. Crystallinity and phase transformation due to irradiation of pristine and irradiated films were characterized by Glancing Angle X-ray Diffraction (GAXRD) using Brucker-D8 advance model. GAXRD results show improvement in crystallinity and phase transformation due to swift heavy ion irradiation. Grain size distribution was verified by AFM and GAXRD results. Swift heavy ion induced modifications in thin films of SnO{sub 2} were confirmed by the presence of prominent peaks at 2θ values of 30.65°, 32.045°, 43.94°, 44.96° and 52.36° in GAXRD spectrum.

  2. Structural and optical studies of 100 MeV Au irradiated thin films of tin oxide

    Science.gov (United States)

    Jaiswal, Manoj Kumar; Kanjilal, D.; Kumar, Rajesh

    2013-11-01

    Thin films of tin(IV) oxide (SnO2) of 100 nm thickness were grown on silicon (1 0 0) matrices by electron beam evaporation deposition technique under high vacuum. The thicknesses of these films were monitored by piezo-sensor attached to the deposition chamber. Nanocrystallinity is achieved in these thin films by 100 MeV Au8+ using 1 pnA current at normal incidence with ion fluences varying from 1 × 1011 ions/cm2 to 5 × 1013 ions/cm2. Swift Heavy Ion beam irradiation was carried out by using 15 UD Pelletron Accelerator at IUAC, New Delhi, India. Optical studies of pristine and ion irradiated thin films were characterized by UV-Visible spectroscopy and Fourier Transform Infrared (FTIR) spectroscopy. Prominent peak at 610 cm-1 in FTIR spectrum confirmed the O-Sn-O bonding of tin(IV) oxide. For Surface topographical studies and grain size calculations, these films were characterized by Atomic Force Microscope (AFM) using Nanoscope III-A. Crystallinity and phase transformation due to irradiation of pristine and irradiated films were characterized by Glancing Angle X-ray Diffraction (GAXRD) using Brucker-D8 advance model. GAXRD results show improvement in crystallinity and phase transformation due to swift heavy ion irradiation. Grain size distribution was verified by AFM and GAXRD results. Swift heavy ion induced modifications in thin films of SnO2 were confirmed by the presence of prominent peaks at 2θ values of 30.65°, 32.045°, 43.94°, 44.96° and 52.36° in GAXRD spectrum.

  3. Formation of Cavities at and Away from Grain Boundaries during 600 MeV Proton Irradiation

    DEFF Research Database (Denmark)

    Singh, Bachu Narain; Leffers, Torben; Green, W. V.

    1982-01-01

    High-purity aluminium (99.9999%) was irradiated with 600 MeV protons at the Swiss Institute for Nuclear Research (SIN) with a damage rate of 3,5 x 10^-6 dpa/s. Irradiation with 600 MeV protons produces helium, hydrogen, and other impurities through mutational reactions. The irradiation experiment...

  4. Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Vittone, E., E-mail: ettore.vittone@unito.it [Department of Physics, NIS Research Centre and CNISM, University of Torino, via P. Giuria 1, 10125 Torino (Italy); Pastuovic, Z. [Centre for Accelerator Science (ANSTO), Locked bag 2001, Kirrawee DC, NSW 2234 (Australia); Breese, M.B.H. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Garcia Lopez, J. [Centro Nacional de Aceleradores (CNA), Sevilla University, J. Andalucia, CSIC, Av. Thomas A. Edison 7, 41092 Sevilla (Spain); Jaksic, M. [Department for Experimental Physics, Ruder Boškovic Institute (RBI), P.O. Box 180, 10002 Zagreb (Croatia); Raisanen, J. [Department of Physics, University of Helsinki, Helsinki 00014 (Finland); Siegele, R. [Centre for Accelerator Science (ANSTO), Locked bag 2001, Kirrawee DC, NSW 2234 (Australia); Simon, A. [International Atomic Energy Agency (IAEA), Vienna International Centre, P.O. Box 100, 1400 Vienna (Austria); Institute of Nuclear Research of the Hungarian Academy of Sciences (ATOMKI), Debrecen (Hungary); Vizkelethy, G. [Sandia National Laboratories (SNL), PO Box 5800, Albuquerque, NM (United States)

    2016-04-01

    Highlights: • We study the electronic degradation of semiconductors induced by ion irradiation. • The experimental protocol is based on MeV ion microbeam irradiation. • The radiation induced damage is measured by IBIC. • The general model fits the experimental data in the low level damage regime. • Key parameters relevant to the intrinsic radiation hardness are extracted. - Abstract: This paper investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general one-dimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and the charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be considered indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials.

  5. LET effects of high energy ion beam irradiation on polysilanes

    Energy Technology Data Exchange (ETDEWEB)

    Seki, Shu; Kanzaki, Kenichi; Tagawa, Seiichi; Yoshida, Yoichi [Osaka Univ., Ibaraki (Japan). Inst. of Scientific and Industrial Research; Kudoh, Hisaaki; Sugimoto, Masaki; Sasuga, Tsuneo; Seguchi, Tadao; Shibata, Hiromi

    1997-03-01

    Thin films of poly(di-n-hexylsilane) were irradiated with 2-20 MeV H{sup +} and He{sup +} ion beams. The beams caused heterogeneous reactions of crosslinking and main chain scission in the films. The relative efficiency of the crosslinking was drastically changed in comparison with that of main chain scission. The anomalous change in the molecular weight distribution was analyzed with increasing irradiation fluence, and the ion beam induced reaction radius; track radius was determined for the radiation sources by the function of molecular weight dispersion. Obtained values were 59{+-}15 A and 14{+-}6 A for 2 MeV He{sup +} and 20 MeV H{sup +} ion beams respectively. (author)

  6. Anti-biofilm activity of Fe heavy ion irradiated polycarbonate

    Energy Technology Data Exchange (ETDEWEB)

    Joshi, R.P. [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Hareesh, K., E-mail: appi.2907@gmail.com [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Bankar, A. [Department of Microbiology, Waghire College, Pune 412301 (India); Sanjeev, Ganesh [Microtron Centre, Department of Studies in Physics, Mangalore University, Mangalore 574166 (India); Asokan, K.; Kanjilal, D. [Inter University Accelerator Centre, Arun Asaf Ali Marg, New Delhi 110067 (India); Dahiwale, S.S.; Bhoraskar, V.N. [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Dhole, S.D., E-mail: sanjay@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

    2016-10-01

    Highlights: • PC films were irradiated by 60 and 120 MeV Fe ions. • Irradiated PC films showed changes in its physical and chemical properties. • Irradiated PC also showed more anti-biofilm activity compared to pristine PC. - Abstract: Polycarbonate (PC) polymers were investigated before and after high energy heavy ion irradiation for anti-bacterial properties. These PC films were irradiated by Fe heavy ions with two energies, viz, 60 and 120 MeV, at different fluences in the range from 1 × 10{sup 11} ions/cm{sup 2} to 1 × 10{sup 13} ions/cm{sup 2}. UV-Visible spectroscopic results showed optical band gap decreased with increase in ion fluences due to chain scission mainly at carbonyl group of PC which is also corroborated by Fourier transform infrared spectroscopic results. X-ray diffractogram results showed decrease in crystallinity of PC after irradiation which leads to decrease in molecular weight. This is confirmed by rheological studies and also by differential scanning calorimetric results. The irradiated PC samples showed modification in their surfaces prevents biofilm formation of human pathogen, Salmonella typhi.

  7. Irradiation effect of different heavy ions and track section on the silkworm Bombyx mori

    International Nuclear Information System (INIS)

    Tu Zhenli; Kobayashi, Yasuhiko; Kiguchi, Kenji; Watanabe, Hiroshi

    2003-01-01

    In order to compare the irradiation effects of different ions, wandering larvae were whole-body exposed or locally irradiated with 50-MeV 4 He 2+ , 220-MeV 12 C 5+ , and 350-MeV 20 Ne 8+ ions, respectively. For the whole-body-exposed individuals, the survival rates at the cocooning, pupation, and emergence stages all decreased as dose increased, and a range-dependent difference was clearly observed. For local irradiation of ovaries, irradiation effects depend very strongly on the projectile range. In the case of local irradiation of dermal cells by different track sections of heavy ions, the closer the target was to the high-LET section of the track, the more pronounced were the radiation effects. These results indicated that by selectively using ion species and adjusting the irradiation depth to the target, heavy-ion radiosurgery on particular tissues or organs of small experimental animals can be performed more accurately

  8. High energy (MeV) ion beam modifications of sputtered MoS2 coatings on sapphire

    International Nuclear Information System (INIS)

    Bhattacharya, R.S.; Rai, A.K.; Erdemir, A.

    1991-01-01

    The present article reports on the results of our investigations of high-energy (MeV) ion irradiation on the microstructural and tribological properties of dc magnetron sputtered MoS 2 films. Films of thicknesses 500-7500 A were deposited on NaCl, Si and sapphire substrates and subsequently ion irradiated by 2 MeV Ag + ions at a dose of 5x10 15 cm -2 . Scanning and transmission electron microscopy. Rutherford backscattering and X-ray diffraction techniques were utilized to study the structural, morphological and compositional changes of the film due to ion irradiation. The friction coefficient and sliding life were determined by pin-on-disc tests. Both as-deposited and ion-irradiated films were found to be amorphous having a stoichiometry of MoS 1.8 . A low friction coefficient in the range 0.03-0.04 was measured for both as-deposited and ion-irradiated films. However, the sliding life of ion-irradiated film was found to increase more than tenfold compared to as-deposited films indicating improved bonding at the interface. (orig.)

  9. Restoration of an electrical breakdown Terahertz emitter by 2 MeV He+ ion implantation

    International Nuclear Information System (INIS)

    Yang kang; Ma Mingwang; Chen Xiliang; Zhu Zhiyong

    2009-01-01

    The irradiation of solids by energetic particles may cause extensive displacement cascades and point defects (vacancies and interstitials), and can be widely used for material modification. In order to repair an electrical breakdown photoconductive antenna (PCA), we irradiated the (100)-oriented, low-temperature (LT) grown GaAs substrate with 10 16 /cm 2 of 2 MeV helium ions. After being implanted, electric resistance of the PCA has increased from 800 Ω to 60 ΜΩ. The irradiated PCA exhibits improvements in the output power in comparison with the electrical breakdown PCA and its signal intensity has increased from 2 nA to 8 nA. Accordingly, its output power has become more than one order of magnitude higher than that before irradiation. The frequency range of PCA has obviously improvement. (authors)

  10. Oxide glass structure evolution under swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Mendoza, C.; Peuget, S.; Charpentier, T.; Moskura, M.; Caraballo, R.; Bouty, O.; Mir, A.H.; Monnet, I.; Grygiel, C.; Jegou, C.

    2014-01-01

    Highlights: • Structure of SHI irradiated glass is similar to the one of a hyper quenched glass. • D2 Raman band associated to 3 members ring is only observed in irradiated glass. • Irradiated state seems slightly different to an equilibrated liquid quenched rapidly. - Abstract: The effects of ion tracks on the structure of oxide glasses were examined by irradiating a silica glass and two borosilicate glass specimens containing 3 and 6 oxides with krypton ions (74 MeV) and xenon ions (92 MeV). Structural changes in the glass were observed by Raman and nuclear magnetic resonance spectroscopy using a multinuclear approach ( 11 B, 23 Na, 27 Al and 29 Si). The structure of irradiated silica glass resembles a structure quenched at very high temperature. Both borosilicate glass specimens exhibited depolymerization of the borosilicate network, a lower boron coordination number, and a change in the role of a fraction of the sodium atoms after irradiation, suggesting that the final borosilicate glass structures were quenched from a high temperature state. In addition, a sharp increase in the concentration of three membered silica rings and the presence of large amounts of penta- and hexacoordinate aluminum in the irradiated 6-oxide glass suggest that the irradiated glass is different from a liquid quenched at equilibrium, but it is rather obtained from a nonequilibrium liquid that is partially relaxed by very rapid quenching within the ion tracks

  11. Ion-irradiated polymer studied by a slow positron beam

    International Nuclear Information System (INIS)

    Kobayashi, Yoshinori; Kojima, Isao; Hishita, Shunichi; Suzuki, Takenori.

    1995-01-01

    Poly (aryl-ether-ether ketone) (PEEK) films were irradiated with 1MeV and 2MeV 0 + ions and the positron annihilation Doppler broadening was measured as a function of the positron energy. The annihilation lines recorded at relatively low positron energies were found to become broader with increasing the irradiation dose, suggesting that positronium (Ps) formation may be inhibited in the damaged regions. A correlation was observed between the Doppler broadening and spin densities determined by electron spin resonance (ESR). (author)

  12. Moessbauer study of amorphous alloys irradiated with energetic heavy ions

    International Nuclear Information System (INIS)

    Kuzmann, E.; Spirov, I.N.

    1984-01-01

    The Moessbauer spectroscopy was applied to study radiation damages in amorphous alloys irradiated with 40 Ar (E=225 MeV) or 132 Xe (E=120 MeV) ions at room temperature. In the magnetically splitted Moessbauer spectra the dose-dependent decreases of the intensity of the 2nd and 5th lines as well as of the average hyperfine magnetic field were observed. The changes weAe also analysed using the hyperfine field distribution obtained from the spectra. The results are interpreted in terms of defect creation and structural changes of shortrange order of irradiated amorphoys alloys

  13. Effect of phase instabilities on the correlation of nickel ion and neutron irradiation swelling in solution annealed 316 stainless steel

    International Nuclear Information System (INIS)

    Rowcliffe, A.F.; Lee, E.H.; Sklad, P.S.

    1979-01-01

    Annealed 316 stainless steel specimens were neutron irradiated to establish steady-state microstructures and then subjected to further high temperature irradiations with 4 MeV Ni ions. It is shown that void growth under neutron irradiation is simulated in ion irradiations carried out at approx. 180 0 C above reactor temperature. However, the precipitate microstructure developed during neutron irradiation is unstable during subsequent ion irradiation. As a result, the relative swelling rates at various reactor temperatures are not simulated correctly

  14. Microbeam line of MeV heavy ions for materials modification and in-situ analysis

    International Nuclear Information System (INIS)

    Horino, Yuji; Chayahara, Akiyoshi; Kiuchi, Masato; Fujii, Kanenaga; Satoh, Mamoru; Takai, Mikio.

    1990-01-01

    A microbeam line for MeV heavy ions of almost any element has been developed for microion-beam processing such as maskless MeV ion implantation and its in-situ analysis. Beam spot sizes of 4.0 μm x 4.0 μm for 3 MeV C 2+ and 9.6 μm x 4.8 μm for 1.8 MeV Au 2+ beams were obtained. Maskless MeV gold ion implantation to a silicon substrate and in-situ microanalysis before and after ion implantation were demonstrated. (author)

  15. Stability of uranium silicides during high energy ion irradiation

    International Nuclear Information System (INIS)

    Birtcher, R.C; Wang, L.M.

    1991-11-01

    Changes induced by 1.5 MeV Kr ion irradiation of both U 3 Si and U 3 Si 2 have been followed by in situ transmission electron microscopy. When irradiated at sufficiently low temperatures, both alloys transform from the crystalline to the amorphous state. When irradiated at temperatures above the temperature limit for ion beam amorphization, both compounds disorder with the Martensite twin structure in U 3 Si disappearing from view in TEM. Prolonged irradiation of the disordered crystalline phases results in nucleation of small crystallites within the initially large crystal grains. The new crystallites increase in number during continued irradiation until a fine grain structure is formed. Electron diffraction yields a powder-like diffraction pattern that indicates a random alignment of the small crystallites. During a second irradiation at lower temperatures, the small crystallizes retard amorphization. After 2 dpa at high temperatures, the amorphization dose is increased by over twenty times compared to that of initially unirradiated material

  16. Hydrogen formation under gamma and heavy ions irradiation of geopolymers

    International Nuclear Information System (INIS)

    Chupin, F.; Dannoux-Papin, A.; D'Espinose de Lacaillerie, J.B.; Ngono Ravache, Y.

    2015-01-01

    This study examines the behavior under irradiation of geo-polymer which is not yet well known and attempts to highlight the importance of water radiolysis. For their use as embedding matrices, stability under ionizing radiation as well as low hydrogen gas released must be demonstrated. Different formulations of geo-polymers have been irradiated either with γ-rays ( 60 Co sources) or 75 MeV 36 Ar ions beams and the production of hydrogen released has been quantified. This paper presents the results of gas analysis in order to identify important structural parameters that influence confined water radiolysis. Indeed, a correlation between pore size, water content on one side, and the hydrogen production radiolytic yield (G(H 2 )) on the other side, has been demonstrated. For the 75 MeV 36 Ar ions irradiation, the effect of porosity has not been well emphasized. For both, the results have revealed the water content influence. (authors)

  17. Accumulation and recovery of defects in ion-irradiated nanocrystalline gold

    Energy Technology Data Exchange (ETDEWEB)

    Chimi, Y. E-mail: chimi@popsvr.tokai.jaeri.go.jp; Iwase, A.; Ishikawa, N.; Kobiyama, M.; Inami, T.; Okuda, S

    2001-09-01

    Effects of 60 MeV {sup 12}C ion irradiation on nanocrystalline gold (nano-Au) are studied. The experimental results show that the irradiation-produced defects in nano-Au are thermally unstable because of the existence of a large volume fraction of grain boundaries. This suggests a possibility of the use of nanocrystalline materials as irradiation-resistant materials.

  18. Ductility loss of ion-irradiated zircaloy-2 in iodine

    International Nuclear Information System (INIS)

    Shimada, M.; Terasawa, M.; Yamamoto, S.; Kamei, H.; Koizumi, K.

    1981-01-01

    An ion bombardment simulation technique for neutron irradiation was applied to 'thick' materials to study the effect of radiation damage on the ductility change in Zircaloy-2 in an iodine environment. Specimens were prepared from actual cladding tubes and, prior to the irradiation, they were heat-treated in vacuo at 450, 580, and 700/degree/C for 2 h. Irradiation was performed by 52-MeV alpha particles up to the 0.32 displacements per atom (dpa) at 340/degree/C. Ductility loss begins to appear after 0.03 dpa irradiation, both in iodine and argon gas environments. The iodine presence resulted in ductility reduction, compared with the argon result in all irradiation dose ranges examined. The stress applied during irradiation caused ductility loss to commence at lower dosage than in the case of stress-free irradiation. These results are discussed in relation to the existing stress corrosion cracking models

  19. Ion beam induced luminescence from diamond using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Bettiol, A A; Jamieson, D N; Prawer, S; Allen, M G [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1994-12-31

    Analysis of the luminescence induced by a MeV ion beam offers the potential to provide useful information about the chemical properties of atoms in crystals to complement the information provided by more traditional Ion Beam Analysis (IBA) such as Rutherford Backscattering Spectrometry (RBS), ion channeling and Particle Induced X-ray Emission (PIXE). Furthermore, the large penetration depth of the MeV ion beam offers several advantages over the relatively shallow penetration of keV electrons typically employed in cathodoluminescence. An Ion Beam Induced Luminescence (IBIL) detection system was developed for the Melbourne microprobe that allows the spatial mapping of the luminescence signal along with the signals from RBS and PIXE. Homoepitaxial diamond growth has been studied and remarkable shifts in the characteristic blue luminescence of diamond towards the green were observed in the overgrowth. This has been tentatively identified as being due to transition metal inclusions in the epitaxial layers. 8 refs., 2 refs.

  20. Ion beam induced luminescence from diamond using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Bettiol, A.A.; Jamieson, D. N.; Prawer, S.; Allen, M.G. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1993-12-31

    Analysis of the luminescence induced by a MeV ion beam offers the potential to provide useful information about the chemical properties of atoms in crystals to complement the information provided by more traditional Ion Beam Analysis (IBA) such as Rutherford Backscattering Spectrometry (RBS), ion channeling and Particle Induced X-ray Emission (PIXE). Furthermore, the large penetration depth of the MeV ion beam offers several advantages over the relatively shallow penetration of keV electrons typically employed in cathodoluminescence. An Ion Beam Induced Luminescence (IBIL) detection system was developed for the Melbourne microprobe that allows the spatial mapping of the luminescence signal along with the signals from RBS and PIXE. Homoepitaxial diamond growth has been studied and remarkable shifts in the characteristic blue luminescence of diamond towards the green were observed in the overgrowth. This has been tentatively identified as being due to transition metal inclusions in the epitaxial layers. 8 refs., 2 refs.

  1. Identification and imaging of modern paints using Secondary Ion Mass Spectrometry with MeV ions

    DEFF Research Database (Denmark)

    Bogdanović Radović, Iva; Siketić, Zdravko; Jembrih-Simbürger, Dubravka

    2017-01-01

    Secondary Ion Mass Spectrometry using MeV ion excitation was applied to analyse modern paint materials containing synthetic organic pigments and binders. It was demonstrated that synthetic organic pigments and binder components with molecular masses in the m/z range from 1 to 1200 could be identi......Secondary Ion Mass Spectrometry using MeV ion excitation was applied to analyse modern paint materials containing synthetic organic pigments and binders. It was demonstrated that synthetic organic pigments and binder components with molecular masses in the m/z range from 1 to 1200 could...... be identified in different paint samples with a high efficiency and in a single measurement. Different ways of mounting of mostly insulating paint samples were tested prior to the analysis in order to achieve the highest possible yield of pigment main molecular ions. As Time-of-Flight mass spectrometer for Me......V Secondary Ion Mass Spectrometry is attached to the heavy ion microprobe, molecular imaging on cross-sections of small paint fragments was performed using focused ions. Due to the fact that molecules are extracted from the uppermost layer of the sample and to avoid surface contamination, the paint samples...

  2. Structural characterization of swift heavy ion irradiated polycarbonate

    International Nuclear Information System (INIS)

    Singh, Lakhwant; Samra, Kawaljeet Singh

    2007-01-01

    Makrofol-N polycarbonate thin films were irradiated with copper (50 MeV) and nickel (86 MeV) ions. The modified films were analyzed by UV-VIS, FTIR and XRD techniques. The experimental data was used to evaluate the formation of chromophore groups (conjugated system of bonds), degradation cross-section of the special functional groups, the alkyne formation and the amorphization cross-section. The investigation of UV-VIS spectra shows that the formation of chromophore groups is reduced at larger wavelength, however its value increases with the increase of ion fluence. Degradation cross-section for the different chemical groups present in the polycarbonate chains was evaluated from the FTIR data. It was found that there was an increase of degradation cross-section of chemical groups with the increase of electronic energy loss in polycarbonate. The alkyne and alkene groups were found to be induced due to swift heavy ion irradiation in polycarbonate. The radii of the alkyne production of about 2.74 and 2.90 nm were deduced for nickel (86 MeV) and copper (50 MeV) ions respectively. XRD analysis shows the decrease of the main XRD peak intensity. Progressive amorphization process of Makrofol-N with increasing fluence was traced by XRD measurements

  3. DC and RF ion accelerators for MeV energies

    International Nuclear Information System (INIS)

    Urbanus, W.H.

    1990-01-01

    This thesis deals with the transport and acceleration of intense ion beams in single-ended Van de Graaff accelerators and the multiple beam rf accelerator MEQALAC (Multiple Electrostatic Quadrupole Array Linear Accelerator). Ch. 2 discusses several beam-envelope calculation techniques and describes the ion-optical components of a 1 MV, high-current, heavy-ion implantation facility and a 2 MV facility for analyzing purposes. The X-ray level of these accelerators is kept low, such that no shielding is needed, by keeping the energy of the secondary electrons sufficiently low, which is accomplished by a suppression system of small permanent magnets built in the acceleration tubes (ch. 3). Ch.'s 4,5 and 6 cover various aspects of stage II of the MEQALAC project. This stage deals with the parallel acceleration of four high-current N + beams from 40 keV to 1 MeV. Acceleration takes place in 32 rf gaps which are part of a modified interdigital H-resonator. In between the accelerating gaps, small electrostatic quadrupoles are mounted, which oppose the space charge forces of the intense ion beams. The lenses are arranged in a periodic focusing structure. A bucket-type plasma ion source is used, which produces both N + and N 2 + ions. In between the ion source and the MEQALAC section, a Low Energy Beam Transport (LEBT) section is mounted which provides for the drift space for a buncher. The latter device transforms the extracted dc beams into bunched beams which are accepted by the MEQALAC section. In ch. 4 the transport of ion beams that contain both N + and N 2 + ions, so-called mixed beams, through the LEBT section is discussed and equations for the current limit of a mixed beam are derived. Bunching of mixed N + , N 2 + beams is discussed in ch. 5. Multichannel acceleration of N + ions with the MEQALAC is discussed in ch. 6. (author). 122 refs.; 67 figs.; 1 tab

  4. Temperature and 8 MeV electron irradiation effects on GaAs solar cells

    Indian Academy of Sciences (India)

    1Department of Physics, Mangalore Institute of Technology and Engineering, ... strate were irradiated with 1 MeV electrons, they showed high radiation tolerance ... under both forward and reverse bias in the temperature range of 270–315 K ...

  5. Focussed MeV ion beam implanted waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Von Bibra, M L; Roberts, A; Nugent, K; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    Single mode buried optical waveguides have been fabricated in fused silica by MeV proton implantation using a focussed hydrogen ion beam. The technique has the potential to direct write waveguide devices and produce multi-layered structures, without the need for intermediate steps such as mask fabrication or layered depositions. A micron resolution Confocal Raman Spectrometer has been used to map the distribution of atomic vacancies that forms the waveguiding region. The results are compared with theoretical calculations. Losses of 3 dB cm{sup -1} have been measured in unannealed samples, which decreases to less than 0.5 dB cm{sup -1} after annealing at 500 degrees Celsius. We describe methods for determining the refractive index distribution of single mode buried waveguides from their output intensity distributions via an inversion of the scalar wave equation. (authors). 5 figs.

  6. Focussed MeV ion beam implanted waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Von Bibra, M.L.; Roberts, A.; Nugent, K.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Single mode buried optical waveguides have been fabricated in fused silica by MeV proton implantation using a focussed hydrogen ion beam. The technique has the potential to direct write waveguide devices and produce multi-layered structures, without the need for intermediate steps such as mask fabrication or layered depositions. A micron resolution Confocal Raman Spectrometer has been used to map the distribution of atomic vacancies that forms the waveguiding region. The results are compared with theoretical calculations. Losses of 3 dB cm{sup -1} have been measured in unannealed samples, which decreases to less than 0.5 dB cm{sup -1} after annealing at 500 degrees Celsius. We describe methods for determining the refractive index distribution of single mode buried waveguides from their output intensity distributions via an inversion of the scalar wave equation. (authors). 5 figs.

  7. Heavy-ion irradiation induced diamond formation in carbonaceous materials

    International Nuclear Information System (INIS)

    Daulton, T. L.

    1999-01-01

    The basic mechanisms of metastable phase formation produced under highly non-equilibrium thermodynamic conditions within high-energy particle tracks are investigated. In particular, the possible formation of diamond by heavy-ion irradiation of graphite at ambient temperature is examined. This work was motivated, in part, by earlier studies which discovered nanometer-grain polycrystalline diamond aggregates of submicron-size in uranium-rich carbonaceous mineral assemblages of Precambrian age. It was proposed that the radioactive decay of uranium formed diamond in the fission particle tracks produced in the carbonaceous minerals. To test the hypothesis that nanodiamonds can form by ion irradiation, fine-grain polycrystalline graphite sheets were irradiated with 400 MeV Kr ions. The ion irradiated graphite (and unirradiated graphite control) were then subjected to acid dissolution treatments to remove the graphite and isolate any diamonds that were produced. The acid residues were then characterized by analytical and high-resolution transmission electron microscopy. The acid residues of the ion-irradiated graphite were found to contain ppm concentrations of nanodiamonds, suggesting that ion irradiation of bulk graphite at ambient temperature can produce diamond

  8. Hydrogen retention in ion irradiated steels

    International Nuclear Information System (INIS)

    Hunn, J.D.; Lewis, M.B.; Lee, E.H.

    1998-01-01

    In the future 1--5 MW Spallation Neutron Source, target radiation damage will be accompanied by high levels of hydrogen and helium transmutation products. The authors have recently carried out investigations using simultaneous Fe/He,H multiple-ion implantations into 316 LN stainless steel between 50 and 350 C to simulate the type of radiation damage expected in spallation neutron sources. Hydrogen and helium were injected at appropriate energy and rate, while displacement damage was introduced by nuclear stopping of 3.5 MeV Fe + , 1 microm below the surface. Nanoindentation measurements showed a cumulative increase in hardness as a result of hydrogen and helium injection over and above the hardness increase due to the displacement damage alone. TEM investigation indicated the presence of small bubbles of the injected gases in the irradiated area. In the current experiment, the retention of hydrogen in irradiated steel was studied in order to better understand its contribution to the observed hardening. To achieve this, the deuterium isotope ( 2 H) was injected in place of natural hydrogen ( 1 H) during the implantation. Trapped deuterium was then profiled, at room temperature, using the high cross-section nuclear resonance reaction with 3 He. Results showed a surprisingly high concentration of deuterium to be retained in the irradiated steel at low temperature, especially in the presence of helium. There is indication that hydrogen retention at spallation neutron source relevant target temperatures may reach as high as 10%

  9. Ion irradiation-induced swelling and hardening effect of Hastelloy N alloy

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, S.J. [Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Li, D.H.; Chen, H.C.; Lei, G.H.; Huang, H.F.; Zhang, W.; Wang, C.B. [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Yan, L., E-mail: yanlong@sinap.ac.cn [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Fu, D.J. [Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Tang, M. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2017-06-15

    The volumetric swelling and hardening effect of irradiated Hastelloy N alloy were investigated in this paper. 7 MeV and 1 MeV Xe ions irradiations were performed at room temperature (RT) with irradiation dose ranging from 0.5 to 27 dpa. The volumetric swelling increases with increasing irradiation dose, and reaches up to 3.2% at 27 dpa. And the irradiation induced lattice expansion is also observed. The irradiation induced hardening initiates at low ion dose (≤1dpa) then saturates with higher ion dose. The irradiation induced volumetric swelling may be ascribed to excess atomic volume of defects. The irradiation induced hardening may be explained by the pinning effect where the defects can act as obstacles for the free movement of dislocation lines. And the evolution of the defects' size and number density could be responsible for the saturation of hardness. - Highlights: •Irradiation Swelling: The irradiation induced volumetric swelling increases with ion dose. •Irradiation Hardening: The irradiation hardening initiates below 1 dpa, then saturates with higher ion dose (1–10 dpa). •Irradiation Mechanism: The irradiation phenomena are ascribed to the microstructural evolution of the irradiation defects.

  10. Structural disorder in sapphire induced by 90.3 MeV xenon ions

    International Nuclear Information System (INIS)

    Kabir, A.; Meftah, A.; Stoquert, J.P.; Toulemonde, M.; Monnet, I.; Izerrouken, M.

    2010-01-01

    In our previous work , we have evidenced, using RBS-C, two effects in the aluminium sublattice of sapphire irradiated with 90.3 MeV xenon ions: a partial disorder creation that saturates at ∼40% followed above a threshold fluence by a highly disordered layer appearing behind the surface. In this work, by RBS-C analysis of the oxygen sublattice, we have observed only one regime of partial disorder creation that saturates at ∼60% in tracks of cross-section double of that found for the aluminium sublattice. Complementary analysis by X-ray diffraction shows that the lattice strain increases with the fluence until a maximum is reached about 7.5 x 10 12 ions/cm 2 . For higher fluences, strain decreases first indicating a little stress relaxation in the material and tends afterwards, to remain constant. This stress relaxation is found to be related to the aluminium sublattice high disorder.

  11. Heavy ion irradiation effects of polymer film on absorption of light

    Energy Technology Data Exchange (ETDEWEB)

    Kasai, Noboru; Seguchi, Tadao [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Arakawa, Tetsuhito

    1997-03-01

    Ion irradiation effects on the absorption of light for three types of polymer films; polyethylene-terephthalate (PET), polyethylene-naphthalate (PEN), and polyether-ether-ketone (PEEK) were investigated by irradiation of heavy ions with Ni{sup 4+}(15MeV), O{sup 6+}(160MeV), and Ar{sup 8+}(175MeV), and compared with electron beams(EB) irradiation. The change of absorption at 400nm by a photometer was almost proportional to total dose for ions and EB. The absorption per absorbed dose was much high in Ni{sup 4+}, but rather small in O{sup 6+} and Ar{sup 8+} irradiation, and the absorption by EB irradiation was accelerated by the temperature of polymer film during irradiation. The beam heating of materials during ion irradiation was assumed, especially for Ni ion irradiation. The heavy ion irradiation effect of polymers was thought to be much affected by the ion beam heating than the linear energy transfer(LET) of radiation source. (author)

  12. Optical, structural, and chemical properties of CR-39 implanted with 5.2 MeV doubly charged carbon ions

    Science.gov (United States)

    Ali, Dilawar; Butt, M. Z.; Ishtiaq, Mohsin; Waqas Khaliq, M.; Bashir, Farooq

    2016-11-01

    Poly-allyl-diglycol-carbonate (CR-39) specimens were irradiated with 5.2 MeV doubly charged carbon ions using Pelletron accelerator. Ion dose was varied from 5 × 1013 to 5 × 1015 ions cm-2. Optical, structural, and chemical properties were investigated by UV-vis spectroscopy, x-ray diffractometer, and FTIR/Raman spectroscopy, respectively. It was found that optical absorption increases with increasing ion dose. Absorption edge shifts from UV region to visible region. The measured opacity values of pristine and ion implanted CR-39 range from 0.0519 to 4.7959 mm-1 following an exponential growth (9141%) with the increase in ion dose. The values of direct and indirect band gap energy decrease exponentially with an increase in ion dose by 59% and 71%, respectively. However, average refractive index in the visible region increases from 1.443 to 2.864 with an increase in ion dose, by 98%. A linear relation between band gap energy and crystallite size was observed. Both the number of carbon atoms in conjugation length and the number of carbon atoms per cluster increase linearly with the increase in ion dose. FTIR spectra showed that on C+2 ions irradiation, the intensity of all bands decreases gradually without appearance of any new band, indicating degradation of polymer after irradiation. Raman spectra revealed that the density of -CH2- group decreases on C+2 ions irradiation. However, the structure of CR-39 is completely destroyed on irradiation with ion dose 1 × 1015 and 5 × 1015 ions cm-2.

  13. Activation of 45-MeV proton irradiation and proton-induced neutron irradiation in polymers

    International Nuclear Information System (INIS)

    Ra, Se-Jin; Kim, Kye-Ryung; Jung, Myung-Hwan; Yang, Tae-Keon

    2010-01-01

    During beam irradiation experiments with more than a few MeV energetic protons, the sample activation problem can be very severe because it causes many kinds of additional problems for the post-processing of the samples, such as time loss, inconvenience of sample handling, personal radiation safety, etc. The most serious problem is that immediate treatment of the sample is impossible in some experiments, such as nano-particle synthesizing. To solve these problems, we studied why the samples are activated and how the level of the activation can be reduced. It is known that the main reasons of activation are nuclear reactions with elements of the target material by primary protons and secondary produced neutrons. Even though the irradiation conditions are same, the level of the activation can be different depending on the target materials. For the nanoparticle synthesizing experiments, the target materials can be defined as the container and the sample itself. The reduction of the activation from the container is easier than the reduction from the sample. Therefore, we tried to reduce the activation level by changing the container materials. In this paper, the results are displayed for some candidate container materials, such as polymethyl methacrylate, polystyrene, Glass, etc., with 45-MeV and 10-nA proton beams. As a result, PS is the most suitable material for the container because of its relatively low level of the activation by protons. Also the contribution of secondary produced neutrons to the activation is negligible.

  14. Irradiation swelling in self-ion irradiated niobium

    International Nuclear Information System (INIS)

    Bajaj, R.; Shiels, S.A.; Hall, B.O.; Fenske, G.R.

    1987-01-01

    This paper presents initial results of an investigation of swelling mechanisms in a model body centered cubic (bcc) metal, niobium, irradiated at elevated temperatures (0.3 T/sub m/ to 0.6 T/sub m/) where T/sub m/ = melting point in K. The objective of this work is to achieve an understanding of the elevated temperature swelling in bcc metals, which are the prime candidate alloys and composite matrix materials for space reactor applications. Niobium was irradiated with 5.3 MeV Nb ++ ions, at temperatures ranging from 700 0 C to 1300 0 C, to a nominal dose of 50 dpa at a dose rate of 6 x 10 -3 dpas. Swelling was observed over a temperature range of 700 0 C to 1200 0 C, with a peak swelling of 7% at 900 0 C. The microstructural data, obtained from transmission electron microscopy, were compared to the predictions of the theoretical model developed during this program. A reasonable agreement was obtained between the experimental measurements of swelling and theoretical predictions by adjusting both the niobium-oxygen binding energy and the incubation dose for swelling to realistic values

  15. A 1MeV, 1A negative ion accelerator test facility

    International Nuclear Information System (INIS)

    Hanada, M.; Dairaku, M.; Inoue, T.; Miyamoto, K.; Ohara, Y.; Okumura, Y.; Watanabe, K.; Yokoyama, K.

    1995-01-01

    For the Proof-of-Principle test of negative ion acceleration up to 1 MeV, the beam energy required for ITER, a negative ion test facility named MeV Test Facility (MTF) and an ion source/accelerator have been designed and constructed. They are designed to produce a 1 MeV H- beam at a low source pressure of 0.13Pa. The MTF has a power supply system, which constituts of a 1MV, 1A, 60 s Cockcroft-Walton type dc high energy generator and power supplies for negative ion generation and extraction (ion source power supplies). The negative ion source/accelerator is composed of a cesiated volume source and a 5-stage, multi-aperture, electrostatic accelerator. The MTF and the ion source/accelerator have been completed, and the accelertion test up to 1 MeV of the H- ions has started. (orig.)

  16. Effect of swift heavy ion irradiation on ethylene–chlorotrifluoroethylene copolymer

    International Nuclear Information System (INIS)

    Singh, Lakhwant; Devgan, Kusum; Samra, Kawaljeet Singh

    2012-01-01

    The swift heavy irradiation induced changes taking place in ethylene–chlorotrifluoroethylene (E–CTFE) copolymer films were investigated in correlation with the applied doses. Samples were irradiated in vacuum at room temperature by lithium (50 MeV), carbon (85 MeV), nickel (120 MeV) and silver (120 MeV) ions with the fluence in the range of 1×10 11 –3×10 12 ions cm −2 . Structural and thermal properties of the irradiated as well as pristine E–CTFE films were studied using FTIR, UV–visible, TGA, DSC and XRD techniques. Swift heavy ion irradiation was found to induce changes in E–CTFE depending upon the applied doses. - Highlights: ► Effect of swift heavy ion irradiation on E–CTFE films has been studied. ► Different structural changes in the original structure of E–CTFE are observed after irradiation with different ions. ► Swift heavy ion irradiation has made E–CTFE more prone to thermal degradation.

  17. Precipitation in Ni-Si during electron and ion irradiation

    Science.gov (United States)

    Lucas, G. E.; Zama, T.; Ishino, S.

    1986-11-01

    This study was undertaken to further investigate how the nature of the irradiation condition affects precipitation in a dilute Ni-Si system. Transmission electron microscopy (TEM) discs of a solution annealed Ni alloy containing 5 at% Si were irradiated with 400 keV Ar + ions, 200 keV He + ions and 1 MeV electrons at average displacement rates in the range 2 × 10 -5dpa/s to 2 × 10 -3dpa/s at temperatures in the range 25°C to 450°C. Samples irradiated with electrons were observed in situ in an HVEM, while ion irradiated specimens were examined in a TEM after irradiation. Precipitation of Ni 3Si was detected by the appearance of superlattice spots in the electron diffraction patterns. It was found that as the mass of the irradiating species increased, the lower bound temperature at which Ni 3Si precipitation was first observed increased. For electron irradiation, the lower bound temperature at 2 × 10 -3dpa/s was ˜125°C, whereas for 400 keV Ar + irradiation at a similar average displacement rate the lower boundary was approximately 325°C. This suggests that cascade disordering competes with radiation induced solute segregation.

  18. Precipitation in Ni-Si during electron and ion irradiation

    International Nuclear Information System (INIS)

    Lucas, G.E.; Zama, T.; Ishino, S.

    1986-01-01

    This study was undertaken to further investigate how the nature of the irradiation condition affects precipitation in a dilute Ni-Si system. Transmission electron microscopy (TEM) discs of a solution annealed Ni alloy containing 5 at% Si were irradiated with 400 keV Ar + ions, 200 keV He + ions and 1 MeV electrons at average displacement rates in the range 2x10 -5 dpa/s to 2x10 -3 dpa/s at temperatures in the range 25 0 C to 450 0 C. Samples irradiated with electrons were observed in situ in an HVEM, while ion irradiated specimens were examined in a TEM after irradiation. Precipitation of Ni 3 Si was detected by the appearance of superlattice spots in the electron diffraction patterns. It was found that as the mass of the irradiating species increased, the lower bound temperature at which Ni 3 Si precipitation was first observed increased. For electron irradiation, the lower bound temperature at 2x10 -3 dpa/s was ∝125 0 C, whereas for 400 keV Ar + irradiation at a similar average displacement rate the lower boundary was approximately 325 0 C. This suggests that cascade disordering competes with radiation induced solute segregation. (orig.)

  19. Corrosion characteristics of Hastelloy N alloy after He+ ion irradiation

    International Nuclear Information System (INIS)

    Lin Jianbo; Yu Xiaohan; Li Aiguo; He Shangming; Cao Xingzhong; Wang Baoyi; Li Zhuoxin

    2014-01-01

    With the goal of understanding the invalidation problem of irradiated Hastelloy N alloy under the condition of intense irradiation and severe corrosion, the corrosion behavior of the alloy after He + ion irradiation was investigated in molten fluoride salt at 700 °C for 500 h. The virgin samples were irradiated by 4.5 MeV He + ions at room temperature. First, the virgin and irradiated samples were studied using positron annihilation lifetime spectroscopy (PALS) to analyze the influence of irradiation dose on the vacancies. The PALS results showed that He + ion irradiation changed the size and concentration of the vacancies which seriously affected the corrosion resistance of the alloy. Second, the corroded samples were analyzed using synchrotron radiation micro-focused X-ray fluorescence, which indicated that the corrosion was mainly due to the dealloying of alloying element Cr in the matrix. Results from weight-loss measurement showed that the corrosion generally correlated with the irradiation dose of the alloy. (author)

  20. 100 MeV silver ions induced defects and modifications in silica glass

    Energy Technology Data Exchange (ETDEWEB)

    Jadhav, Vijay S.; Deore, Avinash V.; Dahiwale, S.S. [Department of Physics, University of Pune, Pune 411007 (India); Kanjilal, D. [Inter University Accelerator Centre, New Delhi 110067 (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411007 (India); Dhole, S.D., E-mail: sanjay@physics.unipune.ac.in [Department of Physics, University of Pune, Pune 411007 (India)

    2014-07-15

    Highlights: •Study of silver ion induced defects and modifications in silica glass. •Variation in oxygen deficiency centres (ODA-II) and nonbridging oxygen hole centres (NBOHC). •Study of structural damage in terms of Urbach energy. -- Abstract: A few silica glass samples having 1 cm{sup 2} area and 0.1 cm thickness were irradiated with 100 MeV energy Ag{sup 7+} ions for the fluences ranging from 1 × 10{sup 12} ions/cm{sup 2} to 5 × 10{sup 13} ions/cm{sup 2}. The optical properties and the corresponding induced defects were characterised by the techniques such as UV–Visible, Photoluminescence (PL), Fourier transform infrared (FTIR), and Electron spin resonance (ESR) spectroscopy. The UV–Visible absorption spectra show two peaks, one at 5 eV and another weak peak at 5.8 eV. A peak observed at 5.0 eV corresponds to B{sub 2} band (oxygen deficiency in SiO{sub 2} network) and the peak at 5.8 eV is due to the paramagnetic defects like E′ centre. The intensities of these peaks found to be increased with increase in ion fluence. It attributes to the increase in the concentration of E′ centres and B{sub 2} band respectively. In addition, the optical band gap energy, Urbach energy and the defects concentration have been calculated using Urbach plot. The optical band gap found to be decreased from 4.65 eV to 4.39 eV and the Urbach energy found to be increased from 60 meV to 162 meV. The defect concentration of nonbridging oxygen hole centres (NBOHC) and E′ centres are found to be increased to 1.69 × 10{sup 13} cm{sup −3} and 3.134 × 10{sup 14} cm{sup −3} respectively. In PL spectra, the peak appeared at 1.92 eV and 2.7 eV envisage the defects of nonbridging oxygen hole centres and B{sub 2α} oxygen deficient centres respectively. ESR spectra also confirms the existence of E′ and NBOHC centres. FTIR spectra shows scissioning of Si-O-Si bonds and the formation of Si-H and Si-OH bonds, which supports to the co-existence of the defects induced by Ag

  1. Preliminary examination of induced radioactivity in pepper by 10 MeV electron irradiation

    International Nuclear Information System (INIS)

    Katayama, Tadashi; Furuta, Masakazu; Sibata, Setsuko; Ito, Norio; Mizohata, Akira; Matsunami, Tadao; Toratani, Hirokazu; Takeda, Atsuhiko.

    1991-01-01

    β-ray measurement was performed on 10 MeV electron-irradiated black pepper and white pepper with liquid scintillation counter in order to reconfirm the wholesomeness of irradiated foods and present unambiguous data to general consumers concerning about the induced radioactivity in the irradiated foods. In irradiated black pepper no radioactivity other than from natural source, un-irradiated one, was detected. But in irradiated white pepper, it was suggested that induced radioactivity might be detected if the detection method was more improved. (author)

  2. Growth rate of dislocation loop in Fe-Ni-Cr alloy under Kr+ ion and electron irradiation

    International Nuclear Information System (INIS)

    Kimoto, T.; Allen, C.W.; Rehn, L.E.

    1991-10-01

    In order to examine the effect of irradiating particle species on the growth rate of radiation-induced dislocation loops, a solution-annealed Fe-25Ni-15Cr-0.02C alloy was irradiated at 723 K first by 1.5 MeV Kr + ions for 2520 sec, then by 1.5 MeV Kr + ions and 1.0 MeV electrons simultaneously for 780 sec, and finally by 1.0 MeV electrons for 780 sec with the HVEM-Tandem Facility in Argonne National Laboratory. The calculated damage rate by 1.5 MeV Kr + ions was 5.8 x 10 -4 dpa/s, and that by 1.0 MeV electrons was 1 x 10 -4 dpa/s. The growth rate of a dislocation loop located at the center of the specimen was 7 x 10 -3 nm/s for the Kr + ion irradiation, 4 x 10 -2 nm/s for the simultaneous Kr + and electron irradiation, and (2--3) x 10 -2 nm/s for the electron irradiation. This implies that the electron irradiation is about 19 times more effective in the growth of radiation-induced dislocation loops than the Kr + ion irradiation. The dislocation loop growth rate under the simultaneous Kr + and electron irradiation is higher than the sum of the growth rates under the individual Kr + and electron irradiations. 5 refs., 4 figs

  3. Ion irradiation damage in ilmenite under cryogenic conditions

    International Nuclear Information System (INIS)

    Mitchell, J.N.; Yu, N.; Devanathan, R.; Sickafus, K.E.; Nastasi, M.A.

    1996-01-01

    A natural single crystal of ilmenite was irradiated at 100 K with 200 keV Ar 2+ . Rutherford backscattering spectroscopy and ion channeling with 2 MeV He + ions were used to monitor damage accumulation in the surface region of the implanted crystal. At an irradiation fluence of 1 x 10 15 Ar 2+ cm -2 , considerable near-surface He + ion dechanneling was observed, to the extent that ion yield from a portion of the aligned crystal spectrum reached the yield level of a random spectrum. This observation suggests that the near-surface region of the crystal was amorphized by the implantation. Cross-sectional transmission electron microscopy and electron diffraction on this sample confirmed the presence of a 150 mm thick amorphous layer. These results are compared to similar investigations on geikielite (MgTiO 3 ) and spinel (MgAl 2 O 4 ) to explore factors that may influence radiation damage response in oxides

  4. Thin film adhesion modification by MeV ions

    International Nuclear Information System (INIS)

    Sugden, S.

    1991-08-01

    The adhesion of thin films, and in particular the way in which such adhesion may be improved by irradiation, is rather poorly understood. The radiation enhanced adhesion effect has been investigated through the use of Ultra High Vacuum sample preparation, analysis and irradiation techniques, in order to gain control over surface and interface composition. In the systems studied, Au on Ta, Au on Si and Ag on Si, films deposited on atomically clean surfaces show good adhesion, and no evidence of enhancement due to irradiation is observed in the case of such clean interfaces. The results are entirely consistent with radiation enhanced adhesion being due to radiolytic effects on contaminant containing layers at the film/substrate interface. In addition, on silicon substrates the observations highlight the superiority of thermal cleaning over low energy sputtering as a route for producing a clean surface. A model of the radiation enhanced adhesion observations for dirty interface systems is developed, which takes into account the two dimensional nature of the ion energy deposition process. All the observations on such systems are broadly consistent with an activation energy for the process of approximately 5 eV. This value is sufficiently large to bring about chemical bonding rearrangement at the critical film/substrate interface. (Author)

  5. 120 MeV Ni Ion beam induced modifications in poly (ethylene terephthalate) used in commercial bottled water

    International Nuclear Information System (INIS)

    Kumar, Vijay; Sonkawade, R. G.; Ali, Yasir; Dhaliwal, A. S.

    2012-01-01

    We report the effects of heavy ion irradiation on the optical, structural, and chemical properties of polyethylene terephthalate (PET) film used in commercial bottled water. PET bottles were exposed with 120 MeV Ni ions at fluences varying from 3 x 10 10 to 3 x 10 12 ion/cm 2 . The modifications so induced were analyzed by using UV-Vis, X-ray diffraction (XRD) and Fourier Transform Infrared (FTIR) spectroscopy. Substantial decrease in optical band gap is observed with the increase in ion fluence. In the FTIR spectra, most of bands are decreased due the degradation of the molecular structure. XRD measurements show the decrease in peak intensity, which reflects the loss of crystallinity after irradiation.

  6. Effect of 50 and 80 MeV phosphorous ions on the contribution of interface and oxide state density in n-channel MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.S.; Dhole, S.D.; Kanjilal, D.; Bhoraskar, V.N. E-mail: vnb@physics.unipune.ernet.in

    1999-07-02

    n-channel depletion MOS devices were irradiated with 50 and 80 MeV phosphorous ions, with different fluences varying in the range from 10{sup 11} to 10{sup 13} ions/cm{sup 2}. The pre and post irradiation I-V characteristics were measured and the corresponding threshold shift {delta}V{sub TH} was estimated. In both the cases, the drain current I{sub D} and the threshold voltage V{sub TH} were found to decrease with the ion fluence. The increase in the threshold voltage shift {delta}V{sub TH} with the ion fluence, was greater for the devices irradiated with 80 MeV ions than those irradiated with 50 MeV ions. The interface and oxide state densities were determined through the subthreshold voltage measurements. To separate the contributions of oxide and interface states towards the threshold voltage shift, the ion irradiated MOS devices were annealed at 150 deg. C. The threshold shift during annealing initially decreased and later increased with increasing annealing period. The rate of change of the interface states during annealing was higher than that of the oxide states. It was also found that depletion mode (normally ON) MOSFETs switched operation to enhancement mode (normally OFF)

  7. Nanoparticle formation in H2O/N-2 and H2O/Ar mixtures under irradiation by 20 MeV protons and positive corona discharge

    DEFF Research Database (Denmark)

    Imanaka, M.; Tomita, S.; Kanda, S.

    2010-01-01

    To investigate the contribution of ions to gas nucleation, we have performed experiments on the formation of water droplets in H2O/N-2 and H2O/Ar gas mixtures by irradiation with a 20 MeV proton beam and by positive corona discharge. The size of the formed nanoparticles was measured using...

  8. Insatured polymeric thin film formation by energetic ions irradiations of fluoropolymers

    International Nuclear Information System (INIS)

    Le Moel, A.; Duraud, J.P.; Darnez, C.

    1987-03-01

    This work deals with the study of both structural and electronic modifications of polyvinyldene fluoride (PVDF) by monochromatised X-ray photoemission spectroscopy (XPS). Monochromatised XPS has been used to follow the surface modifications of PVDF samples subjected to various levels of irradiations (oxygen ions: 800 MeV, krypton ions: 3600 MeV). Desorption of hydrogen fluoride molecules and the creation of cumulene compounds are observed. 46 refs

  9. Carbon ion irradiation induced surface modification of polypropylene

    International Nuclear Information System (INIS)

    Saha, A.; Chakraborty, V.; Dutta, R.K.; Chintalapudi, S.N.

    2001-01-01

    Polypropylene was irradiated with 12 C ions of 3.6 and 5.4 MeV energies in the fluence range of 5x10 13 -5x10 14 ions/cm 2 using 3 MV tandem accelerator. Ion penetration was limited to a few microns and surface modifications were investigated by scanning electron microscopy. At the lowest ion fluence only blister formation of various sizes (1-6 μm) were observed, but at higher fluence (1x10 14 ions/cm 2 ) a three-dimensional network structure was found to form. A gradual degradation in the network structure was observed with further increase in the ion fluence. The dose dependence of the changes on surface morphology of polypropylene is discussed

  10. Carbon ion irradiation induced surface modification of polypropylene

    Energy Technology Data Exchange (ETDEWEB)

    Saha, A. E-mail: abhijit@alpha.iuc.res.in; Chakraborty, V.; Dutta, R.K.; Chintalapudi, S.N

    2001-12-01

    Polypropylene was irradiated with {sup 12}C ions of 3.6 and 5.4 MeV energies in the fluence range of 5x10{sup 13}-5x10{sup 14} ions/cm{sup 2} using 3 MV tandem accelerator. Ion penetration was limited to a few microns and surface modifications were investigated by scanning electron microscopy. At the lowest ion fluence only blister formation of various sizes (1-6 {mu}m) were observed, but at higher fluence (1x10{sup 14} ions/cm{sup 2}) a three-dimensional network structure was found to form. A gradual degradation in the network structure was observed with further increase in the ion fluence. The dose dependence of the changes on surface morphology of polypropylene is discussed.

  11. Ion irradiation enhanced crystal nucleation in amorphous Si thin films

    International Nuclear Information System (INIS)

    Im, J.S.; Atwater, H.A.

    1990-01-01

    The nucleation kinetics of the amorphous-to-crystal transition of Si films under 1.5 MeV Xe + irradiation have been investigated by means of in situ transmission electron microscopy in the temperature range T=500--580 degree C. After an incubation period during which negligible nucleation occurs, a constant nucleation rate was observed in steady state, suggesting that homogeneous nucleation occurred. Compared to thermal crystallization, a significant enhancement in the nucleation rate during high-energy ion irradiation (five to seven orders of magnitude) was observed with an apparent activation energy of 3.9±0.75 eV

  12. Capacitance-voltage investigation of silicon photodiodes damaged by MeV energy light ions

    International Nuclear Information System (INIS)

    Kalinka, G.; Simon, A.; Novak, M.; Kiss, A.Z.

    2006-01-01

    Complete text of publication follows. Nuclear radiation creates not only deep centers, but in addition influences shallow dopant concentration in semiconductors, as well. At a given temperature the maximum frequency a center can respond to depends on its energy level, therefore the capacitance-voltage (C-V) characteristics of radiation damaged semiconductor diodes should ideally be measured as function of frequency in order to obtain the physical and energy depth distribution of ionized centers [1,2]. In our experiments C-V plots of MeV energy ion irradiated photodiodes were taken at fixed 1 kHz frequency, which is low enough to be sensitive at room temperature to some of the deep levels expected. During, for example, an irradiation with 5.5 MeV α particles the capacitance of a p + nn + diode increased significantly at low voltages, but showed rather small changes at higher ones. The former turned out to be merely related to a decrease of the built in voltage, corresponding to a lifetime to relaxation type transition of the semiconductor [3]. Rescaling C-V data for this change, the remaining, actual capacitance changes could be interpreted as related to nuclear recoil caused damage located around the end of particle tracks. C-V technique has also been used for follow up investigation of spontaneous self annealing at room temperature of irradiated samples. This is shown here by plotting capacitance data normalized to their virgin values as function of depletion depth for irradiation with 430 keV protons, whose range is about 5 μm. The sensitivity of the method is illustrated for low fluence of 6.5 MeV oxygen, whose range is 5 μm, too, and where the normalization is now made to data taken one week after the irradiation. Acknowledgement This work was supported by the Hungarian Research and Technology Innovation Fund and the Croatian Ministry of Science, Education and Sports within the framework of the Hungarian-Croatian Intergovernmental Science and Technology Co

  13. Identification and imaging of modern paints using Secondary Ion Mass Spectrometry with MeV ions

    Science.gov (United States)

    Bogdanović Radović, Iva; Siketić, Zdravko; Jembrih-Simbürger, Dubravka; Marković, Nikola; Anghelone, Marta; Stoytschew, Valentin; Jakšić, Milko

    2017-09-01

    Secondary Ion Mass Spectrometry using MeV ion excitation was applied to analyse modern paint materials containing synthetic organic pigments and binders. It was demonstrated that synthetic organic pigments and binder components with molecular masses in the m/z range from 1 to 1200 could be identified in different paint samples with a high efficiency and in a single measurement. Different ways of mounting of mostly insulating paint samples were tested prior to the analysis in order to achieve the highest possible yield of pigment main molecular ions. As Time-of-Flight mass spectrometer for MeV Secondary Ion Mass Spectrometry is attached to the heavy ion microprobe, molecular imaging on cross-sections of small paint fragments was performed using focused ions. Due to the fact that molecules are extracted from the uppermost layer of the sample and to avoid surface contamination, the paint samples were not embedded in the resin as is usually done when imaging of paint samples using different techniques in the field of cultural heritage.

  14. Radiological safety research of food irradiation with 7.5 MeV X-rays

    International Nuclear Information System (INIS)

    Yang Bin; Tang Weidong; Zhang Yue; Xu Tao; Jin Jianqiao; Ye Mingyang

    2012-01-01

    China and America both have 7.5 MeV high energy X-ray accelerator. The radiological safety of food irradiated with 7.5 MeV X-rays (bremsstrahlung) has been investigated. Samples of meat and meat ash were located in a large volume of fresh meat at the position of the highest photoneutron fluence and irradiated to an X-ray dose of 15 kGy, twice the maximum dose allowed by the US FDA for meat irradiation. An evaluation of the corresponding radiation exposure from ingestion of the irradiated product has been compared to natural background radiation. The paper concludes that the risk to individuals from intake of food irradiated with X-rays from 7.5 MeV electrons, even with a broad energy spectrum, would be trivial. The common target materials are Au, Ta and W. The U.S, requires only Au and Ta can be used as food irradiation target materials and China has not yet relevant provisions. The first 7.5 MeV accelerator for food irradiation in China is under built, and will do the explore research for the choice of target material. (authors)

  15. Nanostructure evolution in ODS steels under ion irradiation

    Directory of Open Access Journals (Sweden)

    S. Rogozhkin

    2016-12-01

    In this work, we carried out atom probe tomography (APT and transmission electron microscopy (TEM studies of three different ODS steels produced by mechanical alloying: ODS Eurofer, 13.5Cr ODS and 13.5Cr-0.3Ti ODS. These materials were investigated after irradiation with Fe (5.6MeV or Ti (4.8MeV ions up to 1015ion/cm2 and part of them up to 3×1015ion/cm2. In all cases, areas for TEM investigation were cut at a depth of ∼ 1.3µm from the irradiated surface corresponding to the peak of the radiation damage dose. It was shown that after irradiation at RT and at 300°С the number density of oxide particles in all the samples grew up. Meanwhile, the fraction of small particles in the size distribution has increased. APT revealed an essential increase in nanoclusters number and a change of their chemical composition at the same depth. The nanostructure was the most stable in 13.5Cr-0.3Ti ODS irradiated at 300°С: the increase of the fraction of small oxides was minimal and no change of nanocluster chemical composition was detected.

  16. Effect of 100 MeV swift heavy ions [silver (Ag8+)] on morphological and electrical properties of polypyrrole

    Science.gov (United States)

    Kaur, Amarjeet; Dhillon, Anju; Avasthi, D. K.

    2009-10-01

    Polypyrrole (PPY) films were prepared by the electrochemical polymerization technique. The fully undoped samples were irradiated with different fluences ranging from 1010 to 1012 ions/cm2 of 100 MeV silver (Ag8+) ions. In order to explain the effect of these radiations, a comparative study of samples before and after irradiation was performed by using various techniques such as surface electron microscopy, atomic force microscopy, and X-ray diffraction. With an increase in fluence, the surface structure of PPY films becomes smoother, and the conductivity increases by two orders, which has been explained in light of reordering of polymer chains. The temperature dependence of the dc conductivity of irradiated as well as unirradiated samples has been investigated at 77-300 K. The charge transport properties before and after irradiation are retained although conductivity increases. It has been proposed that swift heavy ion irradiation affects the interchain conductivity. The conductivity of irradiated samples is stable under atmospheric conditions for more than 9 months. The present investigations open up the scope for the applicability of irradiated conducting polymers as microstructures with defined conductivity for sensor applications.

  17. Effect of 100 MeV swift heavy ions [silver (Ag8+)] on morphological and electrical properties of polypyrrole

    International Nuclear Information System (INIS)

    Kaur, Amarjeet; Dhillon, Anju; Avasthi, D. K.

    2009-01-01

    Polypyrrole (PPY) films were prepared by the electrochemical polymerization technique. The fully undoped samples were irradiated with different fluences ranging from 10 10 to 10 12 ions/cm 2 of 100 MeV silver (Ag 8+ ) ions. In order to explain the effect of these radiations, a comparative study of samples before and after irradiation was performed by using various techniques such as surface electron microscopy, atomic force microscopy, and X-ray diffraction. With an increase in fluence, the surface structure of PPY films becomes smoother, and the conductivity increases by two orders, which has been explained in light of reordering of polymer chains. The temperature dependence of the dc conductivity of irradiated as well as unirradiated samples has been investigated at 77-300 K. The charge transport properties before and after irradiation are retained although conductivity increases. It has been proposed that swift heavy ion irradiation affects the interchain conductivity. The conductivity of irradiated samples is stable under atmospheric conditions for more than 9 months. The present investigations open up the scope for the applicability of irradiated conducting polymers as microstructures with defined conductivity for sensor applications.

  18. Bias dependent charge trapping in MOSFETs during 1 and 6 MeV electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.S. [Department of Chemical Engineering, Mie University, 5148507 (Japan); Kulkarni, V.R.; Mathakari, N.L.; Bhoraskar, V.N. [Department of Physics, Univeristy of Pune, Pune 411007 (India); Dhole, S.D. [Department of Physics, Univeristy of Pune, Pune 411007 (India)], E-mail: sanjay@physics.unipune.ernet.in

    2008-06-15

    To study irradiation-induced charge trapping in SiO{sub 2} and around the SiO{sub 2}-Si interface, depletion n-MOSFETs (metal-oxide-semiconductor field effect transistor) were used. The devices were gate biased during 1 and 6 MeV pulsed electron irradiation. The I{sub D}-V{sub DS} (drain current versus drain voltage) and I{sub D}-V{sub GS} (drain current versus gate voltage) characteristics were measured before and after irradiation. The shift in threshold voltage {delta}V{sub T} (difference in threshold voltage V{sub T} before and after irradiation) exhibited trends depending on the applied gate bias during 1 MeV electron irradiation. This behavior can be associated to the contribution of irradiation-induced negative charge {delta}N{sub IT} buildup around the SiO{sub 2}-Si interface to {delta}V{sub T}, which is sensitive to the electron tunneling from the substrates. However, only weak gate bias dependence was observed in 6 MeV electron irradiated devices. Independent of the energy loss and applied bias, the positive oxide trapped charge {delta}N{sub OT} is marginal and can be associated to thin and good quality of SiO{sub 2}. These results are explained using screening of free and acceptor states by the applied bias during irradiation, thereby reducing the total irradiation-induced charges.

  19. Preliminary examination of induced radio activity in pepper by 10 MeV electron irradiation

    International Nuclear Information System (INIS)

    Furuta, Masakazu; Katayama, Tadashi; Ito, Norio; Mizohata, Akira; Matsunami, Tadao; Toratani, Hirokazu; Takeda, Atsuhiko

    1989-01-01

    β-ray measurement was performed on 10 MeV electron-irradiated black pepper and white pepper in order to reconfirm the wholesomeness of irradiated food and present unambiguous data to general consumers concerning about the induced radioactivity in the irradiated foods. From elemental composition of the samples and investigation of photonuclear reactions, several β-emmitters were listed up. But no radioactivity other than from natural sources was detected in the irradiated sample by β-ray counting with 2 π gass flow counter, suggesting that the induced β-emmitters in the irradiated sample was below the detection limit of its induced radioactivity. (author)

  20. High ion temperatures from buried layers irradiated with Vulcan Petawatt

    International Nuclear Information System (INIS)

    Karsch, S.; Schreiber, J.; Willingale, L.; Lancaster, K.; Habara, H.; Nilson, P.; Gopal, A.; Wei, M. S.; Stoeckl, C.; Evans, R.; Clarke, R.; Heathcote, R.; Najmudin, Z.; Krushelnick, K.; Neely, D.; Norreys, P. A.

    2005-01-01

    Deuteron acceleration from CH/CD/CH layer targets irradiated with PW laser pulses has been studied using. Thomson parabola spectrometers and neutron TOF spectroscopy. The measured ion and neutron spectra reveal significant MeV deuteron acceleration from the deeply buried CD layer, which scales with the thickness of the overlying CH layer. While the neutron spectra reveal the scaling of the thermal heating with target thickness, the ion spectra indicate the presence of an efficient nonthermal acceleration mechanism inside. the bulk. Possible explanations will be discussed. (Author)

  1. Observation of ZnS nanoparticles sputtered from ZnS films under 2 MeV Au irradiation

    Science.gov (United States)

    Kuiri, P. K.; Joseph, B.; Ghatak, J.; Lenka, H. P.; Sahu, G.; Acharya, B. S.; Mahapatra, D. P.

    2006-07-01

    ZnS nanoparticles have been observed on catcher foils due to 2 MeV Au ion irradiation of ZnS films thermally evaporated on Si(1 0 0) substrates. The structure and size distribution of nanoclusters collected were studied using transmission electron microscopy for irradiation fluences in the range of 1 × 10 11-1 × 10 15 ions cm -2. The nanoclusters were found to have a hexagonal wurtzite structure. Optical absorption measurements on similarly deposited ZnS on silica glass indicate the film to be also composed of hexagonal wurtzite ZnS. Based on this and available data we argue that the observed nanoparticles on the catcher foils are the results of shock waves induced emission of material chunks with the same atomic coordination as in the target.

  2. Swift heavy ion irradiation effects on carbonyl and trans-vinylene groups in high and low density polyethylene

    International Nuclear Information System (INIS)

    Grosso, M.F. del; Chappa, V.C.; Arbeitman, C.R.; Garcia Bermudez, G.; Behar, M.

    2009-01-01

    In this work, we have studied the effects of swift heavy ion irradiation on the creation of new functional groups in high and low density polyethylene (HDPE and LDPE). Polymers were irradiated with different ions (6.77 MeV He and 47 MeV Li) and fluences. The induced changes were analyzed by Fourier transform infrared (FTIR) spectroscopy. Creation and damage cross sections for some groups were compared for two different types of PE.

  3. Swift heavy ion irradiation effects on carbonyl and trans-vinylene groups in high and low density polyethylene

    Energy Technology Data Exchange (ETDEWEB)

    Grosso, M.F. del, E-mail: delgrosso@tandar.cnea.gov.a [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA (Argentina); Chappa, V.C. [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA (Argentina); CONICET (Argentina); Arbeitman, C.R. [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA (Argentina); Garcia Bermudez, G. [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA (Argentina); CONICET (Argentina); Escuela de Ciencia y Tecnologia, UNSAM (Argentina); Behar, M. [Instituto de Fisica, UFRGS, Porto Alegre (Brazil)

    2009-10-01

    In this work, we have studied the effects of swift heavy ion irradiation on the creation of new functional groups in high and low density polyethylene (HDPE and LDPE). Polymers were irradiated with different ions (6.77 MeV He and 47 MeV Li) and fluences. The induced changes were analyzed by Fourier transform infrared (FTIR) spectroscopy. Creation and damage cross sections for some groups were compared for two different types of PE.

  4. Construction plan of ion irradiation facility in JAERI

    International Nuclear Information System (INIS)

    Tanaka, Ryuichi

    1987-01-01

    The Takasaki Radiation Chemistry Research Establishment of Japan Atomic Energy Research Institute (JAERI) started the construction of an ion irradiation facility to apply ion beam to the research and development of radiation resistant materials for severe environment, the research on biotechnology and new functional materials. This project was planned as ion beam irradiation becomes an effective means for the research on fundamental physics and advanced technology, and the national guideline recently emphasizes the basic and pioneering field in research and development. This facility comprises an AVF cyclotron with an ECR ion source (maximum proton energy: 90 MeV), a 3 MV tandem accelerator, a 3 MV single end type Van de Graaf accelerator and a 400 kV ion implanter. In this report, the present status of planning the accelerators and the facility to be constructed, the outline of research plan, the features of the accelerators, and the beam characteristics are described. In this project, the research items are divided into the materials for space environment, the materials for nuclear fusion reactors, biotechnology, new functional materials, and ion beam technology. The ion beams required for the facility are microbeam, pulsed beam, multiple beam, neutron beam and an expanded irradiation field. (Kako, I.)

  5. Structural modifications of swift heavy ion irradiated PEN probed by optical and thermal measurements

    International Nuclear Information System (INIS)

    Devgan, Kusum; Singh, Lakhwant; Samra, Kawaljeet Singh

    2013-01-01

    Highlights: • The present paper reports the effect of swift heavy ion irradiation on Polyethylene Naphthalate (PEN). • Swift heavy ion irradiation introduces structural modification and degradation of PEN at different doses. • Lower irradiation doses in PEN result in modification of structural properties and higher doses lead to complete degradation. • Strong correlation between structural, optical, and thermal properties. - Abstract: The effects of swift heavy ion irradiation on the structural characteristics of Polyethylene naphthalate (PEN) were studied. Samples were irradiated in vacuum at room temperature by lithium (50 MeV), carbon (85 MeV), nickel (120 MeV) and silver (120 MeV) ions with the fluence in the range of 1×10 11 –3×10 12 ions cm −2 . Ion induced changes were analyzed using X-ray diffraction (XRD), Fourier transform infra red (FT-IR), UV–visible spectroscopy, thermo-gravimetric analysis (TGA) and differential scanning calorimetry (DSC) techniques. Cross-linking was observed at lower doses resulting in modification of structural properties, however higher doses lead to the degradation of the investigated polymeric samples

  6. Low temperature irradiation of iron, zirconium and copper by 10 to 16 MeV protons

    Energy Technology Data Exchange (ETDEWEB)

    Omar, A M

    1978-01-01

    A theoretical analysis of scattering and radiation damage parameters is carried out for 14 MeV neutrons and 10-17 MeV protons on Fe, Ni, Cu, Zr, Nb, and Au. Damage energies are computed for the interactions using both elastic and non-elastic data. The results show that proton encounters deposit a greater damage energy than 14 MeV neutrons. To examine the theoretical results, electrical resistivity measurements are undertaken for Fe, Zr and Cu irradiated at 12 to 17.5K with 10 to 16 MeV protons. Post-irradiation annealing is carried out in situ using a closed-cycle helium-cooled cryostat. Values of the resistivity damage rate are compared with values estimated from the theoretical damage-energy results. Also, the observed stage I recovery is analysed in terms of the corresponding recovery reported for electron and fast-neutron irradiations. The relation between the 16 MeV proton data and published data estimated from a fusion reactor spectrum is discussed. It is also shown that protons create a damage structure similar to a superposition of the damage structures generated by electrons and fast neutrons. The sample state of imperfection is shown to influence the induced damage state in proton irradiation.

  7. 7.5 MeV High Average Power Linear Accelerator System for Food Irradiation Applications

    International Nuclear Information System (INIS)

    Eichenberger, Carl; Palmer, Dennis; Wong, Sik-Lam; Robison, Greg; Miller, Bruce; Shimer, Daniel

    2005-09-01

    In December 2004 the US Food and Drug Administration (FDA) approved the use of 7.5 MeV X-rays for irradiation of food products. The increased efficiency for treatment at 7.5 MeV (versus the previous maximum allowable X-ray energy of 5 MeV) will have a significant impact on processing rates and, therefore, reduce the per-package cost of irradiation using X-rays. Titan Pulse Sciences Division is developing a new food irradiation system based on this ruling. The irradiation system incorporates a 7.5 MeV electron linear accelerator (linac) that is capable of 100 kW average power. A tantalum converter is positioned close to the exit window of the scan horn. The linac is an RF standing waveguide structure based on a 5 MeV accelerator that is used for X-ray processing of food products. The linac is powered by a 1300 MHz (L-Band) klystron tube. The electrical drive for the klystron is a solid state modulator that uses inductive energy store and solid-state opening switches. The system is designed to operate 7000 hours per year. Keywords: Rf Accelerator, Solid state modulator, X-ray processing

  8. Critical current densities and flux creep rate in Co-doped BaFe2As2 with columnar defects introduced by heavy-Ion irradiation

    International Nuclear Information System (INIS)

    Nakajima, Y.; Tsuchiya, Y.; Taen, T.; Yagyuda, H.; Tamegai, T.; Okayasu, S.; Sasase, M.; Kitamura, H.; Murakami, T.

    2010-01-01

    We report the formation of columnar defects in Co-doped BaFe 2 As 2 single crystals with different heavy-ion irradiations. The formation of columnar defects by 200 MeV Au ion irradiation is confirmed by transmission electron microscopy and their density is about 40% of the irradiation dose. Magneto-optical imaging and bulk magnetization measurements reveal that the critical current density J c is enhanced in the 200 MeV Au and 800 MeV Xe ion irradiated samples while J c is unchanged in the 200 MeV Ni ion irradiated sample. We also find that vortex creep rates are strongly suppressed by the columnar defects. We compare the effect of heavy-ion irradiation into Co-doped BaFe 2 As 2 and cuprate superconductors.

  9. The gas bubbles distribution in 600 MeV protons irradiated aluminium

    International Nuclear Information System (INIS)

    Gavillet, D.; Martin, J.L.; Victoria, M.; Green, W.

    1984-01-01

    In order to simulate the damage produced by 14 MeV fusion neutrons, thin foils of high purity Al have been irradiated by a proton beam of 580 MeV (120μA). After irradiation at temperatures higher than 0.5 Tm transmission electron microscope observations of gas bubbles distribution were performed. At 200 0 C a uniform distribution of bubbles has been observed inside the grain. The average distance between bubbles and their density have been determined. The gas pressure inside the bubbles has been estimated [fr

  10. Simulation of alpha decay of actinides in iron phosphate glasses by ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Dube, Charu L., E-mail: dubecharu@gmail.com; Stennett, Martin C.; Gandy, Amy S.; Hyatt, Neil C.

    2016-03-15

    Highlights: • Alpha decay of actinides in iron phosphate glasses is simulated by employing ion irradiation technique. • FTIR and Raman spectroscopic measurements confirm modification of glass network. • The depolymerisation of glass network after irradiation is attributed to synergetic effect of nuclear and electronic losses. - Abstract: A surrogate approach of ion beam irradiation is employed to simulate alpha decay of actinides in iron phosphate nuclear waste glasses. Bismuth and helium ions of different energies have been selected for simulating glass matrix modification owing to radiolysis and ballistic damage due to recoil atoms. Structural modification and change in coordination number of network former were probed by employing Reflectance Fourier-Transform Infrared (FT-IR), and Raman spectroscopies as a consequence of ion irradiation. Depolymerisation is observed in glass sample irradiated at intermediate energy of 2 MeV. Helium blisters of micron size are seen in glass sample irradiated at low helium ion energy of 30 keV.

  11. In-situ high temperature irradiation setup for temperature dependent structural studies of materials under swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Kulriya, P.K.; Kumari, Renu; Kumar, Rajesh; Grover, V.; Shukla, R.; Tyagi, A.K.; Avasthi, D.K.

    2015-01-01

    An in-situ high temperature (1000 K) setup is designed and installed in the materials science beam line of superconducting linear accelerator at the Inter-University Accelerator Centre (IUAC) for temperature dependent ion irradiation studies on the materials exposed with swift heavy ion (SHI) irradiation. The Gd 2 Ti 2 O 7 pyrochlore is irradiated using 120 MeV Au ion at 1000 K using the high temperature irradiation facility and characterized by ex-situ X-ray diffraction (XRD). Another set of Gd 2 Ti 2 O 7 samples are irradiated with the same ion beam parameter at 300 K and simultaneously characterized using in-situ XRD available in same beam line. The XRD studies along with the Raman spectroscopic investigations reveal that the structural modification induced by the ion irradiation is strongly dependent on the temperature of the sample. The Gd 2 Ti 2 O 7 is readily amorphized at an ion fluence 6 × 10 12 ions/cm 2 on irradiation at 300 K, whereas it is transformed to a radiation-resistant anion-deficient fluorite structure on high temperature irradiation, that amorphized at ion fluence higher than 1 × 10 13 ions/cm 2 . The temperature dependent ion irradiation studies showed that the ion fluence required to cause amorphization at 1000 K irradiation is significantly higher than that required at room temperature irradiation. In addition to testing the efficiency of the in-situ high temperature irradiation facility, the present study establishes that the radiation stability of the pyrochlore is enhanced at higher temperatures

  12. Surface amorphization in Al2O3 induced by swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Okubo, N.; Ishikawa, N.; Sataka, M.; Jitsukawa, S.

    2013-01-01

    Microstructure in single crystalline Al 2 O 3 developed during irradiation by swift heavy ions has been investigated. The specimens were irradiated by Xe ions with energies from 70 to 160 MeV at ambient temperature. The fluences were in the range from 1.0 × 10 13 to 1.0 × 10 15 ions/cm 2 . After irradiations, X-ray diffractometry (XRD) measurements and cross sectional transmission electron microscope (TEM) observations were conducted. The XRD results indicate that in the initial stage of amorphization in single crystalline Al 2 O 3 , high-density S e causes the formation of new planes and disordering. The new distorted lattice planes formed in the early stage of irradiation around the fluence of 5.0 × 10 13 ions/cm 2 for single crystalline Al 2 O 3 irradiated with 160 MeV-Xe ions. Energy dependence on structural modification was also examined in single crystalline Al 2 O 3 irradiated by swift heavy ions. The XRD results indicate that the swift heavy ion irradiation causes the lattice expansion and the structural modification leading to amorphization progresses above the energy around 100 MeV in this XRD study. The TEM observations demonstrated that amorphization was induced in surface region in single crystalline Al 2 O 3 irradiated by swift heavy ions above the fluence expected from the results of XRD. Obvious boundary was observed in the cross sectional TEM images. The crystal structure of surface region above the boundary was identified to be amorphous and deeper region to be single crystal. The threshold fluence of amorphization was found to be around 1.0 × 10 14 ions/cm 2 in the case over 80 MeV swift heavy ion irradiation and the fluence did not depend on the crystal structures

  13. Surface amorphization in Al2O3 induced by swift heavy ion irradiation

    Science.gov (United States)

    Okubo, N.; Ishikawa, N.; Sataka, M.; Jitsukawa, S.

    2013-11-01

    Microstructure in single crystalline Al2O3 developed during irradiation by swift heavy ions has been investigated. The specimens were irradiated by Xe ions with energies from 70 to 160 MeV at ambient temperature. The fluences were in the range from 1.0 × 1013 to 1.0 × 1015 ions/cm2. After irradiations, X-ray diffractometry (XRD) measurements and cross sectional transmission electron microscope (TEM) observations were conducted. The XRD results indicate that in the initial stage of amorphization in single crystalline Al2O3, high-density Se causes the formation of new planes and disordering. The new distorted lattice planes formed in the early stage of irradiation around the fluence of 5.0 × 1013 ions/cm2 for single crystalline Al2O3 irradiated with 160 MeV-Xe ions. Energy dependence on structural modification was also examined in single crystalline Al2O3 irradiated by swift heavy ions. The XRD results indicate that the swift heavy ion irradiation causes the lattice expansion and the structural modification leading to amorphization progresses above the energy around 100 MeV in this XRD study. The TEM observations demonstrated that amorphization was induced in surface region in single crystalline Al2O3 irradiated by swift heavy ions above the fluence expected from the results of XRD. Obvious boundary was observed in the cross sectional TEM images. The crystal structure of surface region above the boundary was identified to be amorphous and deeper region to be single crystal. The threshold fluence of amorphization was found to be around 1.0 × 1014 ions/cm2 in the case over 80 MeV swift heavy ion irradiation and the fluence did not depend on the crystal structures.

  14. Effect of Ion Irradiation in Cadmium Niobate Pyrochlores

    International Nuclear Information System (INIS)

    Jiang, Weilin; Weber, William J.; Thevuthasan, Suntharampillai; Boatner, Lynn A.

    2003-01-01

    Irradiation experiments have been performed for cadmium niobate pyrochlore (CdNb2O) single crystals at both 150 and 300 K using 1.0 MeV Au ions over fluences ranging from 0.01 to 0.10 ions/nm. In-situ 3.0 MeV He Rutherford backscattering spectrometry along the -axial channeling direction (RBS/C) has been applied to study the damage states ranging from small defect concentrations to a fully amorphous state. Results show that the crystal can be readily amorphized under the irradiation conditions. Room-temperature recovery of the defects produced at 150 K has been observed, while the defects produced at 300 K are thermally stable at room temperature. Results also indicate that the RBS/C analysis used in this study induced negligible damage in the near-surface regime. In addition, irradiation at and below room temperature using He and C3 ions leads to surface exfoliation at the corresponding damage peaks

  15. 100 MeV Ag{sup 7+} ion induced physicochemical changes in isotactic polypropylene

    Energy Technology Data Exchange (ETDEWEB)

    Mathakari, N.L. [Microtron Accelerator Laboratory, Department of Physics, University of Pune, Ganeshkhind, Pune 411007, Maharashtra (India); Kanjilal, D. [Inter University Accelerator Center, New Delhi (India); Bhoraskar, V.N. [Microtron Accelerator Laboratory, Department of Physics, University of Pune, Ganeshkhind, Pune 411007, Maharashtra (India); Dhole, S.D. [Microtron Accelerator Laboratory, Department of Physics, University of Pune, Ganeshkhind, Pune 411007, Maharashtra (India)], E-mail: sanjay@physics.unipune.ernet.in

    2008-04-15

    Thin films of isotactic polypropylene having 500 {mu}m thickness were irradiated with 100 MeV Ag{sup 7+} ions at the fluences varying from 10{sup 11} to 5 x 10{sup 12} ions/cm{sup 2}. The properties such as chemical, optical, structural and surface morphology were characterized by techniques namely FTIR, UV-visible, photoluminescence, XRD, SEM and contact angle method. The FTIR spectra show the scissioning of C-H and C-C bonds, whereas, in photoluminescence, the intensities of the peaks at 440 and 480 nm in emission spectra and at 236 nm in excitation spectra observed to be decreased with increase in ion fluence. This may be due to the decomposition of luminescent centers. The UV-visible spectra also show a remarkable red shift from 218 to 367 nm and the subsequent large reduction in the optical band gap from 5.37 to 3.39 eV. This attributes to the carbonization or graphitization of polypropylene. On the contrary, the intensities of XRD peaks, particularly the peak due to 1 1 0 planes, shows sufficient enhancement which signifies overall increase in crystallinity. This ascribes to relief in the local strain on the crystallites due to scissioning of tie molecules in the amorphous zones. The contact angle has increased from 78 deg. to 97 deg. which reveals the absence of hydrophilic functional groups, carbonization and surface roughening. The result is also supported by SEM analysis.

  16. Electron and ion currents relevant to accurate current integration in MeV ion backscattering spectrometry

    International Nuclear Information System (INIS)

    Matteson, S.; Nicolet, M.A.

    1979-01-01

    The magnitude and characteristics of the currents which flow in the target and the chamber of an MeV ion backscattering spectrometer are examined. Measured energy distributions and the magnitude of high-energy secondary electron currents are reported. An empirical universal curve is shown to fit the energy distribution of secondary electrons for several combinations of ion energy, targets and ion species. The magnitude of tertiary electron currents which arise at the vacuum vessel walls is determined for various experimental situations and is shown to be non-negligible in many cases. An experimental arrangement is described which permits charge integrations to 1% arruracy without restricting access to the target as a Faraday cage does. (Auth.)

  17. Control system for 10 MeV irradiation electron linac

    International Nuclear Information System (INIS)

    Zeng Ziqiang; Zhang Lifeng; Lu Weixing; Gao Zhenjiang; Zhang Yan; Han Guangwen; Wang Shuxian

    2005-01-01

    Control system of the 10 MeV electron linac using Distributed Control System (DCS) was studied. The hardware of control system consists of four SIEMENS PLCs and monitor computer, the software bases on STEP 7, Labwindows/CVI and SQL Server. The bus between the monitor computer and the main PLC is 100 M industrial networks, between PLCs is MPI bus, between PLC and remote partner is PROFIBUS, between PLC and terminals is RS485/422. The software of control system can provide a friendly human machine interface to operate the machine, protect the human and equipment from risk, and storage the status of the accelerator real time to the database. The monitor and maintenance of the linac can been carried out not only on local computer or local network, but also in internet. (author)

  18. Positron lifetime and Doppler broadening study of defects created by swift ion irradiation in sapphire

    International Nuclear Information System (INIS)

    Liszkay, L.; Gordo, P.M.; Lima, A. de; Havancsak, K.; Skuratov, V.A.; Kajcsos, Z.

    2004-01-01

    Swift ions create a defect profile penetrating deep into a solid compared to the sampling range of typical slow positron beams, which may consequently study a homogeneous zone of defected materials. To investigate the defect population created by energetic ions, we studied α-Al 2 O 3 single crystals irradiated with swift Kr ions by using conventional and pulsed positron beams. Samples irradiated with krypton at 245 MeV energy in a wide fluence range show nearly saturated positron trapping above 5 x 10 10 ions cm -2 fluence, indicating the creation of monovacancies in high concentration. At 1 x 10 14 ions cm -2 irradiation a 500 ps long lifetime component appears, showing the creation of larger voids. This threshold corresponds well to the onset of the overlap of the damage zones after Bi ion irradiation along the ion trajectories observed with microscopic methods. (orig.)

  19. Hardness enhancement and crosslinking mechanisms in polystyrene irradiated with high energy ion-beams

    International Nuclear Information System (INIS)

    Lee, E.H.; Rao, G.R.; Mansur, L.K.

    1996-01-01

    Surface hardness values several times larger than steel were produced using high energy ion beams at several hundred keV to MeV. High LET is important for crosslinking. Crosslinking is studied by analyzing hardness variations in response to irradiation parameter such as ion species, energy, and fluence. Effective crosslinking radii at hardness saturation are derived base on experimental data for 350 keV H + and 1 MeV Ar + irradiation of polystyrene. Saturation value for surface hardness is about 20 GPa

  20. Irradiation effects of 11 MeV protons on ferritic steels

    International Nuclear Information System (INIS)

    Hamaguchi, Yoshikazu; Kuwano, Hisashi; Misawa, Toshihei

    1985-01-01

    It is considered that ferritic/martensitic steels are the candidate of the first wall materials for future fusion reactors. The most serious problem in the candidate materials is the loss of ductility due to the elevation of ductile-brittle transition temperature by the high dpa irradiation of neutrons. 14 MeV neutrons produced by D-T reaction cause high dpa damage and also produce large quantity of helium and hydrogen atoms in first wall materials. Those gas atoms also play an important role in the embrittlement of steels. The main purpose of this work was to simulate the behavior of hydrogen produced by the transmutation in the mechanical properties of ferritic steels when they were irradiated with 11 MeV protons. The experimental procedure and the results of hardness, the broadening of x-ray diffraction lines, Moessbauer spectroscopy and small punch test are reported. High energy protons of 10 - 20 MeV are suitable to the simulation experiment of 14 MeV neutron radiation damage. But the production of the active nuclei emitting high energy gamma ray and having long life, Co-56, is the most serious problem. Another difficulty is the control of irradiation temperature. A small irradiation chamber must be developed. (Kako, I.)

  1. Dislocation Climb Sources Activated by 1 MeV Electron Irradiation of Copper-Nickel Alloys

    DEFF Research Database (Denmark)

    Barlow, P.; Leffers, Torben

    1977-01-01

    Climb sources emitting dislocation loops are observed in Cu-Ni alloys during irradiation with 1 MeV electrons in a high voltage electron microscope. High source densities are found in alloys containing 5, 10 and 20% Ni, but sources are also observed in alloys containing 1 and 2% Ni. The range of ...

  2. Positronium formation in helium bubbles in 600 MeV proton-irradiated aluminium

    DEFF Research Database (Denmark)

    Jensen, K. O.; Eldrup, Morten Mostgaard; Singh, Bachu Narain

    1985-01-01

    Aluminium samples containing helium bubbles produced by 600 MeV proton irradiation at 430°C were investigated by positron annihilation; both lifetime and angular correlation measurements were made. The angular correlation curves contain an unusually narrow component. This component is associated...

  3. Postirradiation tensile properties of Mo and Mo alloys irradiated with 600 MeV protons

    International Nuclear Information System (INIS)

    Mueller, G.V.; Gavillet, D.; Victoria, M.; Martin, J.L.

    1994-01-01

    Tensile specimens of pure Mo and Mo-5 Re, Mo-41 Re and TZM alloys have been irradiated with 600 MeV protons in the PIREX facility at 300 and 660 K to 0.5 dpa. Results of the postirradiation tensile testing show a strong radiation hardening and a severe loss of ductility for all the materials tested at room temperature. ((orig.))

  4. Effects of ion beam irradiation on Oncidium lanceanum

    International Nuclear Information System (INIS)

    Zaiton Ahmad; Affrida Abu Hassan; Nurul Aliaa Idris; Mohd Nazir Basiran

    2006-01-01

    Protocorm-like bodies (PLBs) of an orchid (Oncidium lanceanum) were irradiated using 220 MeV 12 C 5+ ion, accelerated by AVF cyclotron at JAEA, Japan in 2005. Five different doses were applied to the PLBs; 0, 1.0, 2.0, 6.0 and 12.0 Gy. Following irradiation, these PLBs were maintained in cultures for germination and multiplication. Irradiation effects on growth and seedling regeneration patterns as well as morphological characteristics of the in vitro cultures were monitored and recorded. In general, average fresh weights of the irradiated PLBs increased progressively by irradiating the explants at 1.0, 2.0 and reached the maximum at 6.0 Gy. The figure however dropped when the explants were irradiated at 12 Gy. Surprisingly, although the highest average fresh weight was recorded on PLBs irradiated at 6.0 Gy, most of these PLBs were not able to regenerate into complete shoots. On average, only 21 seedlings were successfully regenerated from each gram of these PLBs. The highest shoot regeneration was recorded on cultures irradiated at 2.0 Gy in which 102 seedlings were obtained from one gram of the PLBs. Most of the regenerated seedlings have been transferred to glass house for morphological screening. Molecular analysis showed the presence of DNA polymorphisms among the seedlings from different doses

  5. Evaluation of Ion Irradiation Behavior of ODS Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jin Sung; Kim, Min Chul; Hong, Jun Hwa; Han, Chang Hee; Chang, Young Mun; Bae, Chang Soo; Bae, Yoon Young; Chang, Moon Hee

    2006-08-15

    FM steel (Grade 92) and ODS alloy(MA956) specimens were ion irradiated with 122 MeV Ne ions. Irradiation temperatures were about 450 and 550 .deg. C and the peak dose was 1, 5, and 10 dpa. Cross-sectional TEM samples were prepared by the electrolytic Ni-plating after pre-treatment of the irradiated specimens. Irradiation cavities in FM steel and ODS alloy specimens were not much different in size; about 20 nm in diameter in both specimens irradiated at around 450 .deg. C. However, the size distribution of cavities in FM steel specimens was broader than that in ODS alloy specimen, indicating that the cavity growth probably via coalescence). It was noticeable that the location and the preferential growth of the cavities in FM steel specimens: cavities on the PAGB (prior austenite grain boundary) was significantly larger than those within the grains. This could be an important issue for the mechanical properties, especially high temperature creep, fracture toughness, and so on. The dependency of the dose threshold and swelling on the ratio of the inert gas concentration/dpa was analysed for the various irradiation source, including He, Ne, Fe/He, and fast neutron, and the empirical correlation was established.

  6. Evaluation of Ion Irradiation Behavior of ODS Alloys

    International Nuclear Information System (INIS)

    Jang, Jin Sung; Kim, Min Chul; Hong, Jun Hwa; Han, Chang Hee; Chang, Young Mun; Bae, Chang Soo; Bae, Yoon Young; Chang, Moon Hee

    2006-08-01

    FM steel (Grade 92) and ODS alloy(MA956) specimens were ion irradiated with 122 MeV Ne ions. Irradiation temperatures were about 450 and 550 .deg. C and the peak dose was 1, 5, and 10 dpa. Cross-sectional TEM samples were prepared by the electrolytic Ni-plating after pre-treatment of the irradiated specimens. Irradiation cavities in FM steel and ODS alloy specimens were not much different in size; about 20 nm in diameter in both specimens irradiated at around 450 .deg. C. However, the size distribution of cavities in FM steel specimens was broader than that in ODS alloy specimen, indicating that the cavity growth probably via coalescence). It was noticeable that the location and the preferential growth of the cavities in FM steel specimens: cavities on the PAGB (prior austenite grain boundary) was significantly larger than those within the grains. This could be an important issue for the mechanical properties, especially high temperature creep, fracture toughness, and so on. The dependency of the dose threshold and swelling on the ratio of the inert gas concentration/dpa was analysed for the various irradiation source, including He, Ne, Fe/He, and fast neutron, and the empirical correlation was established

  7. Use of the SPIRAL 2 facility for material irradiations with 14 MeV energy neutrons

    International Nuclear Information System (INIS)

    Mosnier, A.; Ridikas, D.; Ledoux, X.; Pellemoine, F.; Anne, R.; Huguet, Y.; Lipa, M.; Magaud, P.; Marbach, G.; Saint-Laurent, M.G.; Villari, A.C.C.

    2005-01-01

    The primary goal of an irradiation facility for fusion applications will be to generate a material irradiation database for the design, construction, licensing and safe operation of a fusion demonstration power station (e.g., DEMO). This will be achieved through testing and qualifying material performance under neutron irradiation that simulates service up to the full lifetime anticipated in the power plant. Preliminary investigations of 14 MeV neutron effects on different kinds of fusion material could be assessed by the SPIRAL 2 Project at GANIL (Caen, France), aiming at rare isotope beams production for nuclear physics research with first beams expected by 2009. In SPIRAL 2, a deuteron beam of 5 mA and 40 MeV interacts with a rotating carbon disk producing high-energy neutrons (in the range between 1 and 40 MeV) via C (d, xn) reactions. Then, the facility could be used for 3-4 months y -1 for material irradiation purposes. This would correspond to damage rates in the order of 1-2 dpa y -1 (in Fe) in a volume of ∼10 cm 3 . Therefore, the use of miniaturized specimens will be essential in order to effectively utilize the available irradiation volume in SPIRAL 2. Sample package irradiation temperature would be in the range of 250-1000 deg. C. The irradiation level of 1-2 dpa y -1 with 14 MeV neutrons (average energy) may be interesting for micro-structural and metallurgical investigations (e.g., mini-traction, small punch tests, etc.) and possibly for the understanding of specimen size/geometric effects of critical material properties. Due to the small test cell volume, sample in situ experiments are not foreseen. However, sample packages would be, if required, available each month after transfer in a special hot cell on-site

  8. Influence of high energy ion irradiation on fullerene derivative (PCBM) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Trupti, E-mail: tsphy91@gmail.com [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Singhal, Rahul; Vishnoi, Ritu [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Lakshmi, G.B.V.S. [Inter University Accelerator Centre, Post Box No. 10502, New Delhi 110067 (India); Biswas, S.K. [Department of Metallurgical and Materials Engineering, Malaviya National Institute of Technology, Jaipur 302017 (India)

    2017-04-01

    Highlights: • Spin casted PCBM thin films (∼100 nm) are irradiated with 55 MeV Si{sup 4+} ion beam. • The decrease in band gap is observed after irradiation. • The surface properties is also dependent on incident ion fluences. • Polymerization reactions induced by energetic ions leads to modifications. - Abstract: The modifications produced by 55 MeV Si{sup 4+} swift heavy ion irradiation on the phenyl C{sub 61} butyric acid methyl ester (PCBM) thin films (thickness ∼ 100 nm) has been enlightened. The PCBM thin films were irradiated at 1 × 10{sup 10}, 1 × 10{sup 11} and 1 × 10{sup 12} ions/cm{sup 2} fluences. After ion irradiation, the decreased optical band gap and FTIR band intensities were observed. The Raman spectroscopy reveals the damage produced by energetic ions. The morphological variation were investigated by atomic force microscopy and contact angle measurements and observed to be influenced by incident ion fluences. After 10{sup 11} ions/cm{sup 2} fluence, the overlapping of ion tracks starts and produced overlapping effects.

  9. Moessbauer study of defects in molybdenum and chromium irradiated with ions

    International Nuclear Information System (INIS)

    Troyan, V.A.; Bogdanov, V.V.; Ivanyushkin, E.M.; Pen'kov, Yu.P.

    1980-01-01

    Effects of ion irradiation of monocrystalline molybdenum and polycrystalline chromium with Co-57 impurity were studied by Moessbauer effect. Molybdenum specimens were irradiated by He + ions at accelerators with 40 keV energy. Chromium specimens were irradiated by hydrogen ions with 1.2 MeV energy up to integral 2x10 17 -2x10 19 ion/cm 2 doses. It is shown, that defect introduction into the source matrix by irradiation results in change of gamma-resonance line form and effect value. The observed effects of defect influence on spectrum parameters are discussed. It is concluded, that study of Moessbauer spectra parameters of diluted Co-57 solutions in matrices of different metals permits to determine dynamics of movement of impurity atoms and defects in metals irradiated with ions [ru

  10. Effect of microstructure on light ion irradiation creep in nickel

    International Nuclear Information System (INIS)

    Henager, C.H. Jr.; Simonen, E.P.; Bradley, E.R.; Stang, R.G.

    1983-01-01

    The concept of inhomogeneous slip or localized deformation is introduced to account for a weak dependence of irradiation creep on initial microstructure. Specimens of pure nickel (Ni) with three different microstructures were irradiated at 473 K with 15-17 MeV deuterons in the Pacific Northwest Laboratory (PNL) light ion irradiation creep apparatus. A dispersed barrier model for Climb-Glide (CG) creep was unable to account for the observed creep rates and creep strains. The weak dependence on microstructure was consistent with the Stress Induced Preferential Absorption (SIPA) creep mechanism but a high stress enhanced bias had to be assumed to account for the creep rates. Also, SIPA was unable to account for the observed creep strains. The CG and SIPA modeling utilized rate theory calculations of point defect fluxes and transmission electron microscopy for sink sizes and densities. (orig.)

  11. Effects of microstructure on light ion irradiation creep in nickel

    International Nuclear Information System (INIS)

    Henager, C.H. Jr.; Simonen, E.P.; Bradley, E.R.; Stang, R.G.

    1982-10-01

    The concept of inhomogeneous slip or localized deformation is introduced to account for a weak dependence of irradiation creep on initial microstructure. Specimens of pure Ni with three different microstructures were irradiated at 473 0 K with 15 to 17 MeV deuterons in the PNL light ion irradiation creep apparatus. A dispersed barrier model for climb-glide creep was unable to account for the observed creep rates and creep strains. The weak dependence on microstructure was consistent with the SIPA creep mechanism but a high stress enhanced bias had to be assumed to account for the creep rates. Also, SIPA was unable to account for the observed creep strains. The modeling utilized rate theory calculations of point defect fluxes and transmission electron microscopy for sink sizes and densities

  12. Response of epitaxial YBa2Cu3O7 films on disorder after ion irradiation

    International Nuclear Information System (INIS)

    Saemann-Ischenko, G.; Hensel, B.; Roas, B.; Dengler, J.; Ritter, G.

    1990-01-01

    Measurements of superconducting properties, critical currents, magnetic relaxation, far infrared reflectivity (FIR) and conversion electron Mossbauer spectroscopy (CEMS) have been performed before and after ion irradiation with 25 MeV 16 O, 32 S and 173 MeV 129 Xe (in situ, ex situ or successive). The authors report essential results of this network of investigations performed for the first time on very high quality samples that were characterized to be nearly identical

  13. Search for diffusion of counter-passing MeV ions in the TFTR tokamak

    International Nuclear Information System (INIS)

    Zweben, S.J.; Boivin, R.; Chang, C.S.; Hammett, G.; Mynick, H.E.

    1991-07-01

    Confinement studies of MeV ions will play an important role in the research leading to burning plasmas in tokamaks, since any significant radial transport of MeV alpha particles will affect the heating rate or heating profiles of these plasmas. Because the energy, gyroradius, and collisionality of these MeV ions is very different from that of the background plasma, their transport rates cannot be assumed equal to those of the bulk plasma ions. Note that the desired confinement time for 3.5 MeV alphas is set by their thermalization time, which can be up to τ th,α ∼1 sec for the steady-state phase of ITER, requiring D 2 /sec. This is equivalent to over ∼100,000 alpha particle transits of the torus. 28 refs., 24 figs., 2 tabs

  14. Physical and chemical changes induced by 70 MeV carbon ions in polyvinylidene difluoride (PVDF) polymer

    International Nuclear Information System (INIS)

    Virk, H.S.; Chandi, P.S.; Srivastava, A.K.

    2001-01-01

    Physical and chemical changes induced by 70 MeV carbon ions ( 12 C 5+ ) have been investigated in bulk polyvinylidene fluoride (PVDF) polymer. The induced changes have been studied with respect to their optical, chemical and structural response using UV-visible, FTIR and XRD techniques. The ion fluences ranging from 2.5x10 11 to 9x10 13 ions cm -2 have been used to study the irradiation effects. It has been observed that at the fluence of 9x10 13 ions cm -2 the PVDF sample became brittle and practically it was not possible to handle it for any further measurements. The recorded UV-visible spectra show that the optical absorption increases with increasing fluence, indicating maximum absorption at 200 nm. An interesting feature of UV-visible spectra is that dips change into peaks and vice versa with increase of fluence. In the FTIR spectra, development of new peaks at 1714 and 3692 cm -1 along with disappearance of peaks at 2363 and 3025 cm -1 and shifting of peak at 2984-2974 cm -1 have been observed due to high energy irradiation, indicating the chemical changes induced by 12 C 5+ . The diffraction pattern of PVDF indicates that this polymer is semi-crystalline in nature; a large decrease in the diffraction intensity indicates decrease in crystallinity. Increase in crystallite size has also been observed due to heavy ion irradiation

  15. Electronic excitation induced modifications in elongated iron nanoparticle encapsulated multiwalled carbon nanotubes under ion irradiation

    Science.gov (United States)

    Saikiran, V.; Bazylewski, P.; Sameera, I.; Bhatia, Ravi; Pathak, A. P.; Prasad, V.; Chang, G. S.

    2018-05-01

    Multi-wall carbon nanotubes (MWCNT) filled with Fe nanorods were shown to have contracted and deformed under heavy ion irradiation. In this study, 120 MeV Ag and 80 MeV Ni ion irradiation was performed to study the deformation and defects induced in iron filled MWCNT under heavy ion irradiation. The structural modifications induced due to electronic excitation by ion irradiation were investigated employing high-resolution transmission electron microscopy, micro-Raman scattering experiments, and synchrotron-based X-ray absorption and emission spectroscopy. We understand that the ion irradiation causes modifications in the Fe nanorods which result in compressions and expansions of the nanotubes, and in turn leads to the buckling of MWCNT. The G band of the Raman spectra shifts slightly towards higher wavenumber and the shoulder G‧ band enhances with the increase of ion irradiation fluence, where the buckling wavelength depends on the radius 'r' of the nanotubes as exp[(r)0.5]. The intensity ratio of the D to G Raman modes initially decreases at the lowest fluence, and then it increases with the increase in ion fluence. The electron diffraction pattern and the high resolution images clearly show the presence of ion induced defects on the walls of the tube and encapsulated iron nanorods.

  16. Irradiation effect of different heavy ions and track section on the silkworm Bombyx mori

    Energy Technology Data Exchange (ETDEWEB)

    Tu Zhenli E-mail: tu514@yahoo.co.jp; Kobayashi, Yasuhiko; Kiguchi, Kenji; Watanabe, Hiroshi

    2003-05-01

    In order to compare the irradiation effects of different ions, wandering larvae were whole-body exposed or locally irradiated with 50-MeV {sup 4}He{sup 2+}, 220-MeV {sup 12}C{sup 5+}, and 350-MeV {sup 20}Ne{sup 8+} ions, respectively. For the whole-body-exposed individuals, the survival rates at the cocooning, pupation, and emergence stages all decreased as dose increased, and a range-dependent difference was clearly observed. For local irradiation of ovaries, irradiation effects depend very strongly on the projectile range. In the case of local irradiation of dermal cells by different track sections of heavy ions, the closer the target was to the high-LET section of the track, the more pronounced were the radiation effects. These results indicated that by selectively using ion species and adjusting the irradiation depth to the target, heavy-ion radiosurgery on particular tissues or organs of small experimental animals can be performed more accurately.

  17. Damage nucleation in Si during ion irradiation

    International Nuclear Information System (INIS)

    Holland, O.W.; Fathy, D.; Narayan, J.

    1984-01-01

    Damage nucleation in single crystals of silicon during ion irradiation is investigated. Experimental results and mechanisms for damage nucleation during both room and liquid nitrogen temperature irradiation with different mass ions are discussed. It is shown that the accumulation of damage during room temperature irradiation depends on the rate of implantation. These dose rate effects are found to decrease in magnitude as the mass of the ions is increased. The significance of dose rate effects and their mass dependence on nucleation mechanisms is discussed

  18. Radiation stability of nanocrystalline ZrN coatings irradiated with high energy Xe and Bi ions

    International Nuclear Information System (INIS)

    Skuratov, V.A.; Sokhatsky, A.S.; Uglov, V.V.; Zlotski, S.V.; Van Vuuren, A.J.; Neethling, Jan; O'Connell, J.

    2011-01-01

    Swift Xe and Bi ion irradiation effects in nanocrystalline ZrN coatings as a function of ion fluence are reported. Zirconium nitride films of different thickness (0.1, 3, 10 and 20 micrometers) synthesized by vacuum arc-vapour deposition in nanocrystalline state (average size of crystallites is ∼4 nm) were irradiated with 167 MeV Xe and 695 MeV Bi ions to fluences in the range 3x10 12 ÷2.6x10 15 cm -2 (Xe) and 10 12 x10 13 cm -2 (Bi) and studied using XRD and TEM techniques. No evidence of amorphization due to high level ionizing energy losses has been found. The measurements of lattice parameter have revealed nonmonotonic dependence of the stress level in irradiated samples on ion fluence. (authors)

  19. Graphite irradiated by swift heavy ions under grazing incidence

    CERN Document Server

    Liu, J; Müller, C; Neumann, R

    2002-01-01

    Highly oriented pyrolytic graphite is irradiated with various heavy projectiles (Ne, Ni, Zn, Xe and U) in the MeV to GeV energy range under different oblique angles of incidence. Using scanning tunneling microscopy, the impact zones are imaged as hillocks protruding from the surface. The diameter of surface-grazing tracks varies between 3 nm (Ne) and 6 nm (U), which is about twice as large as under normal beam incidence. Exclusively for U and Xe projectiles, grazing tracks exhibit long comet-like tails consisting of successive little bumps indicating that the damage along the ion path is discontinuous even for highest electronic stopping powers.

  20. Investigations of structural, dielectric and optical properties on silicon ion irradiated glycine monophosphate single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kanagasekaran, T. [Department of Physics, Anna University, Chennai 600 025 (India); Department of Physics and Astrophysics, University of Delhi, New Delhi 110 007 (India); Mythili, P. [Department of Physics, Anna University, Chennai 600 025 (India); Bhagavannarayana, G. [Materials Characterization Division, National Physical Laboratory, New Delhi 110012 (India); Kanjilal, D. [Inter University Accelerator Centre, New Delhi 110 067 (India); Gopalakrishnan, R. [Department of Physics, Anna University, Chennai 600 025 (India)], E-mail: krgkrishnan@annauniv.edu

    2009-08-01

    The 50 MeV silicon ion irradiation induced modifications on structural, optical and dielectric properties of solution grown glycine monophosphate (GMP) crystals were studied. The high-resolution X-ray diffraction study shows the unaltered value of integrated intensity on irradiation. The dielectric constant as a function of frequency and temperature was studied. UV-visible studies reveal the decrease in bandgap values on irradiation and presence of F-centers. The fluorescence spectrum shows the existence of some energy levels, which remains unaffected after irradiation. The scanning electron micrographs reveal the defects formed on irradiation.

  1. Damage growth in Si during self-ion irradiation: A study of ion effects over an extended energy range

    International Nuclear Information System (INIS)

    Holland, O.W.; El-Ghor, M.K.; White, C.W.

    1989-01-01

    Damage nucleation/growth in single-crystal Si during ion irradiation is discussed. For MeV ions, the rate of growth as well as the damage morphology are shown to vary widely along the track of the ion. This is attributed to a change in the dominant, defect-related reactions as the ion penetrates the crystal. The nature of these reactions were elucidated by studying the interaction of MeV ions with different types of defects. The defects were introduced into the Si crystal prior to high-energy irradiation by self-ion implantation at a medium energy (100 keV). Varied damage morphologies were produced by implanting different ion fluences. Electron microscopy and ion-channeling measurements, in conjunction with annealing studies, were used to characterize the damage. Subtle changes in the predamage morphology are shown to result in markedly different responses to the high-energy irradiation, ranging from complete annealing of the damage to rapid growth. These divergent responses occur over a narrow range of dose (2--3 times 10 14 cm -2 ) of the medium-energy ions; this range also marks a transition in the growth behavior of the damage during the predamage implantation. A model is proposed which accounts for these observations and provides insight into ion-induced growth of amorphous layers in Si and the role of the amorphous/crystalline interface in this process. 15 refs, 9 figs

  2. Cluster ion-surface interactions: from meV to MeV energies

    Energy Technology Data Exchange (ETDEWEB)

    Nordlund, Kai; Meinander, Kristoffer; Jaervi, Tommi T.; Peltola, Jarkko; Samela, Juha [Accelerator Laboratory, University of Helsinki (Finland)

    2008-07-01

    The nature of cluster ion-surface interactions changes dramatically with the kinetic energy of the incoming cluster species. In this talk I review some of our recent work on the nature of cluster-surface interactions spanning an energy range from a few MeV/cluster to about 1 MeV/cluster and cluster sizes in the range of 10 - 1000 atoms/cluster. In the energy range of a few MeV/cluster ion, the kinetic energy of the incoming ion is insignificant compared to the energy gained when the surface potential energy at the cluster-surface interface is released and partly translated into kinetic energy. Even in this energy regime I show that surprisingly drastic effects can occur. When the energy of the incoming cluster is raised to a few eV/atom, the kinetic energy of the incoming cluster starts to affect the deposition. It will cause the cluster to entirely reform on impact. When the energy is raised to the range of keV's/cluster, the clusters start to penetrate the sample, fairly similar to conventional ion implantation. However, in dense targets the cluster ions may stick close to each other long enough to cause a significant enhancement of the heat spike in the material. Finally, I show that at kinetic energies around 1 MeV/cluster the cluster enhancement of the heat spike may lead to dramatic surface effects.

  3. Radiation tolerance of nanostructured ZrN coatings against swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Janse van Vuuren, A.; Skuratov, V.A.; Uglov, V.V.; Neethling, J.H.; Zlotski, S.V.

    2013-01-01

    Nano-structured zirconium nitride layers – on Si substrates – of various thicknesses (0.1, 3, 10 and 20 μm) were irradiated with 167 MeV Xe, 250 MeV Kr and 695 MeV Bi ions to fluences in the range from 3 × 10 12 to 2.6 × 10 15 cm −2 for Xe, 1 × 10 13 to 7.06 × 10 13 cm −2 for Kr and 10 12 to 10 13 cm −2 for Bi. The purpose of these irradiation experiments is to simulate the effects of fission fragment bombardment on nanocrystalline ZrN. The irradiated layers where subsequently analysed by X-ray diffraction (XRD), transmission electron microscopy (TEM) and nano-indentation hardness testing (NIH) techniques. XRD, TEM and NIH results indicate that ZrN has a very high tolerance to the effects of high energy irradiation

  4. Effects of ion beam irradiation on Oncidium lanceanum orchids

    International Nuclear Information System (INIS)

    Zaiton Ahmad; Affrida Abu Hassan

    2006-01-01

    Protocorm-like bodies (PLBs) of an orchid (Oncidium lanceanum) were irradiated using 220 MeV 12 C 5+ ions, accelerated by AVF cyclotron at JAEA, Japan in 2005. Five different doses were applied to the PLBs; 0, 1.0, 2.0, 6.0 and 12.0 Gy. Following irradiation, these PLBs were maintained in cultures for germination and multiplication. Irradiation effects on growth and seedling regeneration patterns as well as molecular characteristics of the in vitro cultures were monitored and recorded. In general, average fresh weights of the irradiated PLBs increased progressively by irradiating the explants at 1.0, 2.0 and reached the maximum at 6.0 Gy. The figure however dropped when the explants were irradiated at 12 Gy. Surprisingly, although the highest average fresh weight was recorded on PLBs irradiated at 6.0 Gy, most of these PLBs were not able to regenerate into complete shoots. On average, after 4 months of irradiation, only 21 seedlings were successfully regenerated from each gram of these PLBs. The highest shoot regeneration was recorded on cultures irradiated at 2.0 Gy in which 102 seedlings were obtained from one gram of the PLBs. Some morphological changes were seen on in vitro plantlets derived from PLBs irradiated at doses of 1.0 and 2.0 Gy. Most of the regenerated seedlings have been transferred to glasshouse for further morphological selection. Molecular analysis showed the presence of DNA polymorphisms among the seedlings from different doses of irradiation. (Author)

  5. MeV ion loss during 3He minority heating in TFTR

    International Nuclear Information System (INIS)

    Zweben, S.J.; Hammett, G.; Boivin, R.; Phillips, C.; Wilson, R.

    1992-01-01

    The loss of MeV ions during 3 He ICRH minority heating experiments has been measured using scintillator detectors near the wall of TFTR. The observed MeV ion losses to the bottom (90 degrees poloidal) detector are generally consistent with the expected first-orbit loss of D- 3 He alpha particle fusion products, with an inferred global reaction rate up to ∼10 16 reactions/sec. A qualitatively similar but unexpectedly large loss occurs 45 degrees poloidally below the outer midplane. This additional loss might be due to ICRH tail ions or to ICRH wave-induced loss of previously confined fusion products

  6. Anomalous effects in silicon solar cell irradiated by 1-MeV protons

    Science.gov (United States)

    Kachare, R.; Anspaugh, B. E.

    1989-01-01

    Several silicon solar cells having thicknesses of approximately 63 microns, with and without back-surface fields (BSF), were irradiated with 1-MeV protons having fluences between 10 to the 10th and 10 to the 12th sq cm. The irradiations were performed using both normal and isotropic incidence on the rear surfaces of the cells. It was observed that after irradiation with fluences greater than 10 to the 11th protons/sq cm, all BSF cells degraded at a faster rate than cells without BSF. The irradiation results are analyzed using a model in which irradiation-induced defects in the BSF region are taken into account. Tentatively, it is concluded that an increase in defect density due to the formation of aluminum and proton complexes in BSF cells is responsible for the higher-power loss in the BSF cells compared to the non-BSF cells.

  7. Development of porous structures in GaSb by ion irradiation

    International Nuclear Information System (INIS)

    Jacobi, C.C.; Steinbach, T.; Wesch, W.

    2012-01-01

    Ion irradiation of GaSb causes not only defect formation but also leads to the formation of a porous structure. To study the behaviour of this structural modification, GaSb was irradiated with 6 MeV Iodine ions and ion fluences from 5 × 10 12 to 6 × 10 15 ions/cm 2 . The samples were investigated by step height measurements and scanning electron microscopy (SEM). Experiments were performed with two different procedures: (CI) Continuous Irradiation of samples followed by measurements of the step height in air and (SI) Stepwise Irradiation of samples with measurements of the step height in air between subsequent irradiations. Samples irradiated continuously, show a linear increase of the step height with increasing ion fluence up to 1.5 × 10 14 ions/cm 2 followed by a steeper, linear increase for higher ion fluences up to a step height of 32 μm. This swelling is induced by a formation of voids, and the two different slopes can be explained by a transformation from isolated voids to a rod like structure. For samples irradiated accordingly to procedure (SI), the step height shows the same behaviour up to an ion fluence of 1.5 × 10 14 ions/cm 2 resulting in a step height of ≈3 μm but then decreases with further irradiation. The latter effect is caused by a compaction of the porous structure.

  8. Tailoring magnetism by light-ion irradiation

    International Nuclear Information System (INIS)

    Fassbender, J; Ravelosona, D; Samson, Y

    2004-01-01

    Owing to their reduced dimensions, the magnetic properties of ultrathin magnetic films and multilayers, e.g. magnetic anisotropies and exchange coupling, often depend strongly on the surface and interface structure. In addition, chemical composition, crystallinity, grain sizes and their distribution govern the magnetic behaviour. All these structural properties can be modified by light-ion irradiation in an energy range of 5-150 keV due to the energy loss of the ions in the solid along their trajectory. Consequently the magnetic properties can be tailored by ion irradiation. Similar effects can also be observed using Ga + ion irradiation, which is the common ion source in focused ion beam lithography. Examples of ion-induced modifications of magnetic anisotropies and exchange coupling are presented. This review is limited to radiation-induced structural changes giving rise to a modification of magnetic parameters. Ion implantation is discussed only in special cases. Due to the local nature of the interaction, magnetic patterning without affecting the surface topography becomes feasible, which may be of interest in applications. The main patterning technique is homogeneous ion irradiation through masks. Focused ion beam and ion projection lithography are usually only relevant for larger ion masses. The creation of magnetic feature sizes below 50 nm is shown. In contrast to topographic nanostructures the surrounding area of these nanostructures can be left ferromagnetic, leading to new phenomena at their mutual interface. Most of the material systems discussed here are important for technological applications. The main areas are magnetic data storage applications, such as hard magnetic media with a large perpendicular magnetic anisotropy or patterned media with an improved signal to noise ratio and magnetic sensor elements. It will be shown that light-ion irradiation has many advantages in the design of new material properties and in the fabrication technology of

  9. Evaluation of induced radioactivity in 10 MeV electron-irradiated spices

    Energy Technology Data Exchange (ETDEWEB)

    Furuta, Masakazu; Ito, Norio; Mizohata, Akira; Matsunami, Tadao; Katayama, Tadashi; Toratani, Hirokazu (Osaka Prefectural Univ., Sakai (Japan). Research Inst. for Advanced Science and Technology); Takeda, Atsuhiko

    1993-10-01

    In order to make clear appreciation to induced radioactivity in the irradiated foods, photonuclear reactions which could produce radioactivity at energies up to 10 MeV were listed up from elemental compositions of black pepper, white pepper, red pepper, ginger and turmeric. The samples were irradiated with 10 MeV electron from a linear accelerator to a dose of 100 kGy and radioactivity was measured. Induced radioactivity could not be detected significantly by gamma-ray spectrometry and beta-ray counting in the irradiated samples except for spiked samples which contain some photonuclear target nuclides in the list. From the amount of observed radioactivities of short-lived photonuclear products in the spiked samples and calculation of H[sub 50] according to ICRP Publication 30, it was concluded that the induced radioactivity and its biological effects in the 10 MeV electron-irradiated natural samples were negligible in comparison with natural radioactivity from [sup 40]K contained in the samples. (J.P.N.).

  10. Rib necrosis after postoperative irradiation with 6MeV x-ray to breast cancer

    Energy Technology Data Exchange (ETDEWEB)

    Asakawa, H; Watarai, J; Otawa, H [Miyagi Prefectural Adult Disease Center, Natori (Japan)

    1975-04-01

    In order to examine quality of rays in radiation injury in the rib by high energy x-ray, radiation injury in the rib was roentgenologically followed up in the subjects that received postoperative irradiation only with 6 MeV x-ray to breast cancer. The subjects consisted of 79 patients with the age of 30 to 78 and were irradiated with 200 rads of 6 MeV x-ray 5 times a week delivered in 5 to 6 weeks postoperatively. Two fields were irradiated in a day and the total dose reached more than 5,000 rads. Roentgenologic follow up for more than 12 months revealed that rib necrosis occurred in 9 (11%) of 79 patients and that there was no relation to the age of patient. The necrosis was most likely to develop in the right second rib 10 to 23 months after the irradiation and the mean was 16 months. To the rib region where necrosis occurred, 1,880 to 2,230 ret were irradiated and the mean was 2,014 ret. There found no relation between the irradiation dose and occurrence of rib necrosis in the extent of 4,000 to 6,000 rads for tumor doses. Radiation injury in the lung was complicated in 8 (89%) of 9 patients with rib necrosis, indicating high incidence.

  11. 3 MeV proton irradiation effects on surface, structural, field emission and electrical properties of brass

    Science.gov (United States)

    Ali, Mian Ahsan; Bashir, Shazia; Akram, Mahreen; Mahmood, Khaliq; Faizan-ul-Haq; Hayat, Asma; Mutaza, G.; Chishti, Naveed Ahmed; Khan, M. Asad; Ahmad, Shahbaz

    2018-05-01

    Ion-induced modifications of brass in terms of surface morphology, elemental composition, phase changes, field emission properties and electrical conductivity have been investigated. Brass targets were irradiated by proton beam at constant energy of 3 MeV for various doses ranges from 1 × 1012 ions/cm2 to 1.5 × 1014 ions/cm2 using Pelletron Linear Accelerator. Field Emission Scanning Electron Microscope (FESEM) analysis reveals the formation of randomly distributed clusters, particulates, droplets and agglomers for lower ion doses which are explainable on the basis of cascade collisional process and thermal spike model. Whereas, at moderate ion doses, fiber like structures are formed due to incomplete melting. The formation of cellular like structure is observed at the maximum ion dose and is attributed to intense heating, melting and re-solidification. SRIM software analysis reveals that the penetration depth of 3 MeV protons in brass comes out to be 38 μm, whereas electronic and nuclear energy losses come out to be 5 × 10-1 and 3.1 × 10-4 eV/Å respectively. The evaluated values of energy deposited per atom vary from 0.01 to 1.5 eV with the variation of ion doses from 1 × 1012 ions/cm2 to 1.5 × 1014 ions/cm2. Both elemental analysis i.e. Energy Dispersive X-ray spectroscopy (EDX) and X-ray Diffraction (XRD) supports each other and no new element or phase is identified. However, slight change in peak intensity and angle shifting is observed. Field emission properties of ion-structured brass are explored by measuring I-V characteristics of targets under UHV condition in diode-configuration using self designed and fabricated setup. Improvement in field enhancement factor (β) is estimated from the slope of Fowler-Nordheim (F-N) plots and it shows significant increase from 5 to 1911, whereas a reduction in turn on field (Eo) from 65 V/μm to 30 V/μm and increment in maximum current density (Jmax) from 12 μA/cm2 to 3821 μA/cm2 is observed. These enhancements

  12. Effect of electron-excitation on radiation damage in ion-irradiated FCC metals

    International Nuclear Information System (INIS)

    Iwase, Akihiro

    1989-06-01

    FCC metals (Al, Cu, Ag, Ni) were irradiated with 0.5-1.8 MeV H, He, N and Ar ions, and 84-126 MeV C, F, Si, Cl, Br and I ions at liquid helium temperatures. After the irradiations, thermal annealing experiments were performed up to 300 K. Anomalous reduction of Stage-I recovery was observed in Al and Ni irradiated with high-energy (∼100 MeV) heavy ions. Radiation annealing by 100 MeV I ions was studied in predoped Ni and Cu. The experimental results were analyzed by using a new model which describes the production and radiation annealing of two or more types of defects. The extraordinarily large cross sections for subthreshold recombination of Stage-I defects were obtained in Ni. These results show that in Al and Ni, the energies transferred from the excited electrons to lattice through the electron-lattice interaction contribute to the annihilations of defects during irradiation. (author)

  13. Effects of ion beam irradiation on the microstructures and strengths of different carbon fibers

    International Nuclear Information System (INIS)

    Oku, Tatsuo; Kurumada, Akira; Kawamata, Kiyohiro; Inagaki, Michio

    1998-01-01

    The high energy argon ion was irradiated to different carbon fibers with various microstructures. The cross-sectional structures and strengths properties have been evaluated before and after ion irradiation. As a result, the diameter of fibers decreased due to ion irradiation, except for the fiber with dual structure. The tensile strength also decreased due to ion irradiation, except for fibers which were not heat-treated. This suggests that it is necessary to consider not only the defects in the vertical cross-section but also changes in defect structures in the axial direction. The results of computer simulation indicated that argon ion with 175MeV/1μA produced homogeneous defects in the carbon fibers with the diameter of about 20 μm. (author)

  14. Transmission property and its applications of MeV ion beams with various capillaries

    International Nuclear Information System (INIS)

    Fujita, N; Ishii, K; Ogawa, H

    2012-01-01

    In order to clarify transmission properties of an ion beam extracted with various capillaries into the air, we have measured intensity distributions for the core and the halo components of MeV ion beams using various capillaries. In addition, we have performed in-air-RBS and in-air-PIXE from the point of the application. At the conference, progress report of transmission properties of ion beams with various capillaries and its applications will be presented.

  15. AFM studies on heavy ion irradiated YBCO single crystals

    International Nuclear Information System (INIS)

    Lakhani, Archana; Marhas, M.K.; Saravanan, P.; Ganesan, V.; Srinivasan, R.; Kanjilal, D.; Mehta, G.K.; Elizabeth, Suja; Bhat, H.L.

    2000-01-01

    Atomic Force Microscopy (AFM) is extensively used to characterise the surface morphology of high energy ion irradiated single crystals of high temperature superconductor - YBCO. Our earlier systematic studies on thin films of YBCO under high energy and heavy ion irradiation shows clear evidence of ion induced sputtering or erosion, even though the effect is more on the grain boundaries. These earlier results were supported by electrical resistance measurements. In order to understand more clearly, the nature of surface modification at these high energies, AFM studies were carried out on single crystals of YBCO. Single crystals were chosen in order to see the effect on crystallites alone without interference from grain boundaries. 200 MeV gold ions were used for investigation using the facilities available at Nuclear Science Centre, New Delhi. The type of ion and the range of energies were chosen to meet the threshold for electronically mediated defect production. The results are in conformity with our earlier studies and will be described in detail in the context of electronic energy loss mediated sputtering or erosion. (author)

  16. Low-temperature irradiation of niobium with 15-MeV neutrons

    International Nuclear Information System (INIS)

    Kerchner, H.R.; Coltman, R.R. Jr.; Klabunde, C.E.; Sekula, S.T.

    1978-01-01

    Niobium was irradiated at 4.2 K with high energy d-Be neutrons to a fluence of 3.7x10 15 n/cm 2 . The neutrons were generated at the Oak Ridge Isochronous Cyclotron by the breakup reaction of 40-MeV deuterons in a thick Be target. The resulting neutron energy spectrum was broadly peaked near 15 MeV. The 0.012-cm-diameter wire sample (RRR=200) was situated in a uniform transverse magnetic field. The critical current, flux flow resistance, and normal state resistance were measured by using a standard four-terminal technique. The critical current density and the flux flow resistivity were observed to increase with irradiation and to decrease toward the preirradiation values with subsequent isochronal annealing between 4.2 K and 360 K. Using recent theories of flux line lattice deformation, the elementary pinning force is deduced and the result is compared to theoretical calculations. (Auth.)

  17. Cross sections from 800 MeV proton irradiation of terbium

    Energy Technology Data Exchange (ETDEWEB)

    Engle, J.W., E-mail: jwengle@lanl.gov [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Mashnik, S.G.; Bach, H.; Couture, A.; Jackman, K.; Gritzo, R.; Ballard, B.D.; Fassbender, M.; Smith, D.M.; Bitteker, L.J.; Ullmann, J.L.; Gulley, M.S.; Pillai, C.; John, K.D.; Birnbaum, E.R. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Nortier, F.M., E-mail: meiring@lanl.gov [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2012-11-02

    Terbium foils were irradiated with 800 MeV protons to ascertain the potential for production of lanthanide isotopes of interest in medical, astrophysical, and basic science research and to contribute to nuclear data repositories. Isotopes produced in the foil were quantified by gamma spectroscopy. Cross sections for 35 isotopes produced in the irradiation are reported and compared with predictions by the MCNP6 transport code using the CEM03.03, Bertini and INCL + ABLA event generators. Our results indicate the need to accurately consider fission and fragmentation of relatively light target nuclei like terbium in the modeling of nuclear reactions at 800 MeV. The predictive power of the code was found to be different for each event generator tested but was satisfactory for most of the product yields in the mass region where spallation reactions dominate. However, none of the event generators' results are in complete agreement with measured data.

  18. The irradiation hardening of Ni-Mo-Cr and Ni-W-Cr alloy under Xe26+ ion irradiation

    Science.gov (United States)

    Chen, Huaican; Hai, Yang; Liu, Renduo; Jiang, Li; Ye, Xiang-xi; Li, Jianjian; Xue, Wandong; Wang, Wanxia; Tang, Ming; Yan, Long; Yin, Wen; Zhou, Xingtai

    2018-04-01

    The irradiation hardening of Ni-Mo-Cr and Ni-W-Cr alloy was investigated. 7 MeV Xe26+ ion irradiation was performed at room temperature and 650 °C with peak damage dose from 0.05 to 10 dpa. With the increase of damage dose, the hardness of Ni-Mo-Cr and Ni-W-Cr alloy increases, and reaches saturation at damage dose ≥1 dpa. Moreover, the damage dose dependence of hardness in both alloys can be described by the Makin and Minter's equation, where the effective critical volume of obstacles can be used to represent irradiation hardening resistance of the alloys. Our results also show that Ni-W-Cr alloy has better irradiation hardening resistance than Ni-Mo-Cr alloy. This is ascribed to the fact that the W, instead of Mo in the alloy, can suppress the formation of defects under ion irradiation.

  19. FTIR studies of swift silicon and oxygen ion irradiated porous silicon

    International Nuclear Information System (INIS)

    Bhave, Tejashree M.; Hullavarad, S.S.; Bhoraskar, S.V.; Hegde, S.G.; Kanjilal, D.

    1999-01-01

    Fourier Transform Infrared Spectroscopy has been used to study the bond restructuring in silicon and oxygen irradiated porous silicon. Boron doped p-type (1 1 1) porous silicon was irradiated with 10 MeV silicon and a 14 MeV oxygen ions at different doses ranging between 10 12 and 10 14 ions cm -2 . The yield of PL in porous silicon irradiated samples was observed to increase considerably while in oxygen irradiated samples it was seen to improve only by a small extent for lower doses whereas it decreased for higher doses. The results were interpreted in view of the relative intensities of the absorption peaks associated with O-Si-H and Si-H stretch bonds

  20. Thermoluminescence response of Ge-, Al- and Nd- doped optical fibers by 6 MeV - electron and 6 MeV - photon irradiations

    International Nuclear Information System (INIS)

    Hossain, I.; Moburak, A. A.; Saeed, M.A.; Wagiran, H.; Hida, N.; Yaakob, H.N.

    2015-01-01

    In this paper, we report the prediction of thermoluminescence responses of Neodymium-doped SiO 2 optical fibre with various dose ranges from 0.5 Gy to 4.0 Gy by 6 MeV - electron irradiations without requirement for experimental measurements. A technique has been developed to calculate prediction of 6 MeV - electron response of Neodymium-doped SiO 2 optical fibre by observing the measured TL response of 6 MV - photon and the ratio of known measured photon/electron yield ratio distribution for Ge-doped, Al-doped optical fibre and standard TLD 100 dosimeter. The samples were kept in gelatin capsule an irradiated with 6 MV - photon at the dose range from 0.5 Gy to 4.0 Gy. Siemens model Primus 3368 linear accelerator located at Hospital Sultan Ismail, Johor Bahru has been used to deliver the photon beam to the samples. We found the average response ratio of 6 MV - photon and 6 MeV - electron in Ge-doped, Al-doped optical fibre and standard TLD-100 dosimeter are 0.83(3). Observing the measured value of 6 MV - photon irradiation this average ratio is useful to find the prediction of thermoluminescence responses by 6 MeV - electron irradiation of Neodymium-doped SiO 2 optical fibre by the requirement for experimental measurements with various dose ranges from 0.5 Gy to 4.0 Gy by 6 MV - photon irradiations.

  1. Phase stability in thermally-aged CASS CF8 under heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Li, Meimei, E-mail: mli@anl.gov [Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439 (United States); Miller, Michael K. [Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831 (United States); Chen, Wei-Ying [Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439 (United States)

    2015-07-15

    Highlights: • Thermally-aged CF8 was irradiated with 1 MeV Kr ions at 400 °C. • Atom probe tomography revealed a strong dose dependence of G-phase precipitates. • Phase separation of α and α′ in ferrite was reduced after irradiation. - Abstract: The stability of the microstructure of a cast austenitic stainless steel (CASS), before and after heavy ion irradiation, was investigated by atom probe tomography (APT). A CF8 ferrite–austenite duplex alloy was thermally aged at 400 °C for 10,000 h. After this treatment, APT revealed nanometer-sized G-phase precipitates and Fe-rich α and Cr-enriched α′ phase separated regions in the ferrite. The thermally-aged CF8 specimen was irradiated with 1 MeV Kr ions to a fluence of 1.88 × 10{sup 19} ions/m{sup 2} at 400 °C. After irradiation, APT analysis revealed a strong spatial/dose dependence of the G-phase precipitates and the α–α′ spinodal decomposition in the ferrite. For the G-phase precipitates, the number density increased and the mean size decreased with increasing dose, and the particle size distribution changed considerably under irradiation. The inverse coarsening process can be described by recoil resolution. The amplitude of the α–α′ spinodal decomposition in the ferrite was apparently reduced after heavy ion irradiation.

  2. Photoreactivity in Saccharomyces cerevisiae cells after irradiation with 25 MeV electrons

    International Nuclear Information System (INIS)

    Tsyb, T.S.; Seleva, N.G.; Myasnik, M.N.; Kabakova, N.M.

    1986-01-01

    Significant photoreactivation was noted in radio- and UV-sensitive rad-mutants of Saccharomyces cerevisiae cells exposed to 25 MeV electrons. In order to make the photoreactivable damage be manifest anoxic conditions of irradiation should be chosen as optimal ones. It was shown that the low oxygen effect was partially associated with the photoreactivable damage involved in the lethal effect of ionizing radiation

  3. A 14 MeV neutron irradiation facility with an automated fast cyclic pneumatic

    International Nuclear Information System (INIS)

    Montgomery, M.T.; Yoho, M.D.; Biegalski, S.R.; Landsberger, S.; Welch, L.

    2016-01-01

    This work details the design criteria, construction, controls, and optimization of the 14 MeV neutron irradiation facility at the University of Texas, built with the motivation of performing neutron activation analysis on samples with short half-lives. The facility couples a D-T neutron generator with a pneumatic transfer system capable of transit of approximately one second between source and detector, while the cyclic automated nature allows for many irradiation/count trials with any number of samples, translating to significantly improved counting statistics. (author)

  4. Defect microstructure in copper alloys irradiated with 750 MeV protons

    DEFF Research Database (Denmark)

    Zinkle, S.J.; Horsewell, A.; Singh, B.N.

    1994-01-01

    Transmission electron microscopy (TEM) disks of pure copper and solid solution copper alloys containing 5 at% of Al, Mn, or Ni were irradiated with 750 MeV protons to damage levels between 0.4 and 2 displacements per atom (dpa) at irradiation temperatures between 60 and 200 degrees C. The defect...... significant effect on the total density of small defect clusters, but they did cause a significant decrease in the fraction of defect clusters resolvable as SFT to similar to 20 to 25%. In addition, the dislocation loop density (> 5 nm diameter) was more than an order of magnitude higher in the alloys...

  5. Spallation and 14-MeV neutron irradiation of stabilized NbTi superconductors

    International Nuclear Information System (INIS)

    Hahn, P.; Brown, B.S.; Weber, H.W.; Guinan, M.W.

    1983-08-01

    The results on 5 K irradiation available so far may be summarized as follows. (1) Increases of j/sub c/ following neutron irradiation occur only in conductors which are far from the optimal metallurgical treatments. (2) The changes of j/sub c/ following neutron irradiation and a thermal cycle to room temperature are small and in most cases comparable to the results obtained after 77 K irradiation. (3) The data available so far indicate that the degradation of j/sub c/ at 8 T is larger by about 5 to 10% than the corresponding changes at 5 T at a neutron fluence of 1.3 x 10 22 m -2 (E > 0.1 MeV). (4) The increase of Cu-resistivity is significant even after a thermal cycle to room temperature and requires design changes for a stable magnet operation

  6. Softening of metals under hydrogen ion irradiation

    International Nuclear Information System (INIS)

    Guseva, M.I.; Korshunov, S.N.; Martynenko, Yu.V.; Skorlupkin, I.D.

    2005-01-01

    Experimental study results are presented on steel type 18-10 creep under hydrogen ion irradiation. The Irradiation of annealed specimens is accomplished by 15 keV H 2 + ions with a dose up to 10 22 m -2 at current density of 0.6 A/m 2 at temperatures of 570-770 K. Creep tests show that the irradiation at T = 770 K results in a sharp increase of creep rate. At t 570 K the effect of ion-induced creep in steel 18-10 is not observed. The model is proposed which explains the ion-induced creep by accumulation of hydrogen along grain boundaries, their weakening and removal of obstacles to sliding [ru

  7. High-resolution Auger spectroscopy on 79 MeV Ar5+, 89 MeV Ar6+, and 136 MeV Ar7+ ions after excitation by helium

    International Nuclear Information System (INIS)

    Schneider, T.

    1988-01-01

    In this thesis the atomic structure of highly excited Ar 6+ and Ar 7+ ions was studied. For this 79 MeV Ar 5+ , 89 MeV Ar 6+ , and 136 MeV Ar 7+ ions of a heavy ion accelerator were excited by a He gas target to autoionizing states and the Auger electrons emitted in the decay were measured in highly-resolving state. The spectra were taken under an observational angle of zero degree relative to the beam axis in order to minimize the kinematical broadening of the Auger lines. (orig./HSI) [de

  8. Ambient-temperature diffusion and gettering of Pt atoms in GaN with surface defect region under 60Co gamma or MeV electron irradiation

    Science.gov (United States)

    Hou, Ruixiang; Li, Lei; Fang, Xin; Xie, Ziang; Li, Shuti; Song, Weidong; Huang, Rong; Zhang, Jicai; Huang, Zengli; Li, Qiangjie; Xu, Wanjing; Fu, Engang; Qin, G. G.

    2018-01-01

    Generally, the diffusion and gettering of impurities in GaN needs high temperature. Calculated with the ambient-temperature extrapolation value of the high temperature diffusivity of Pt atoms in GaN reported in literature, the time required for Pt atoms diffusing 1 nm in GaN at ambient temperature is about 19 years. Therefore, the ambient-temperature diffusion and gettering of Pt atoms in GaN can hardly be observed. In this work, the ambient-temperature diffusion and gettering of Pt atoms in GaN is reported for the first time. It is demonstrated by use of secondary ion mass spectroscopy that in the condition of introducing a defect region on the GaN film surface by plasma, and subsequently, irradiated by 60Co gamma-ray or 3 MeV electrons, the ambient-temperature diffusion and gettering of Pt atoms in GaN can be detected. It is more obvious with larger irradiation dose and higher plasma power. With a similar surface defect region, the ambient-temperature diffusion and gettering of Pt atoms in GaN stimulated by 3 MeV electron irradiation is more marked than that stimulated by gamma irradiation. The physical mechanism of ambient-temperature diffusion and gettering of Pt atoms in a GaN film with a surface defect region stimulated by gamma or MeV electron irradiation is discussed.

  9. Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons

    Energy Technology Data Exchange (ETDEWEB)

    Kozlovski, V.V. [St. Petersburg State Polytechnic University, St. Petersburg 195251 (Russian Federation); Lebedev, A.A., E-mail: shura.lebe@mail.ioffe.ru [Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation); National Research University of Information Technologies, Mechanics, and Optics, St. Petersburg 197101 (Russian Federation); Emtsev, V.V.; Oganesyan, G.A. [Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation)

    2016-10-01

    Processes of radiation defect formation and conductivity compensation in silicon and silicon carbide irradiated with 0.9 MeV electrons are considered in comparison with the electron irradiation at higher energies. The experimental values of the carrier removal rate at the electron energy of 0.9 MeV are nearly an order of magnitude smaller than the similar values of the parameter for higher energy electrons (6–9 MeV). At the same time, the formation cross-section of primary radiation defects (Frenkel pairs, FPs) is nearly energy-independent in this range. It is assumed that these differences are due to the influence exerted by the energy of primary knocked-on atoms (PKAs). As the PKA energy increases, the average distance between the genetically related FPs grows and, as a consequence, the fraction of FPs unrecombined under irradiation becomes larger. The FP recombination radius is estimated (∼1.1 nm), which makes it possible to ascertain the charge state of the recombining components. Second, the increase in the PKA energy enables formation of new, more complex secondary radiation defects. At electron energies exceeding 15 MeV, the average PKA energies are closer to the values obtained under irradiation with 1 MeV protons, compared with an electron irradiation at the same energy. As for the radiation-induced defect formation, the irradiation of silicon with MeV protons can be, in principle, regarded as a superposition of the irradiation with 1 MeV electrons and that with silicon ions having energy of ∼1 keV, with the “source” of silicon ions generating these ions uniformly across the sample thickness.

  10. Heavy Ion Irradiation Effects in Zirconium Nitride

    International Nuclear Information System (INIS)

    Egeland, G.W.; Bond, G.M.; Valdez, J.A.; Swadener, J.G.; McClellan, K.J.; Maloy, S.A.; Sickafus, K.E.; Oliver, B.

    2004-01-01

    Polycrystalline zirconium nitride (ZrN) samples were irradiated with He + , Kr ++ , and Xe ++ ions to high (>1.10 16 ions/cm 2 ) fluences at ∼100 K. Following ion irradiation, transmission electron microscopy (TEM) and grazing incidence X-ray diffraction (GIXRD) were used to analyze the microstructure and crystal structure of the post-irradiated material. For ion doses equivalent to approximately 200 displacements per atom (dpa), ZrN was found to resist any amorphization transformation, based on TEM observations. At very high displacement damage doses, GIXRD measurements revealed tetragonal splitting of some of the diffraction maxima (maxima which are associated with cubic ZrN prior to irradiation). In addition to TEM and GIXRD, mechanical property changes were characterized using nano-indentation. Nano-indentation revealed no change in elastic modulus of ZrN with increasing ion dose, while the hardness of the irradiated ZrN was found to increase significantly with ion dose. Finally, He + ion implanted ZrN samples were annealed to examine He gas retention properties of ZrN as a function of annealing temperature. He gas release was measured using a residual gas analysis (RGA) spectrometer. RGA measurements were performed on He-implanted ZrN samples and on ZrN samples that had also been irradiated with Xe ++ ions, in order to introduce high levels of displacive radiation damage into the matrix. He evolution studies revealed that ZrN samples with high levels of displacement damage due to Xe implantation, show a lower temperature threshold for He release than do pristine ZrN samples. (authors)

  11. Microstructure and phase transformations in the ODS alloys irradiated by swift heavy ions

    International Nuclear Information System (INIS)

    Zlotski, S.V.; Anishchik, V.M; Skuratov, V.A.; O’Connell, J.; Neethling, J.H.

    2015-01-01

    Microstructure of KP4 ODS alloy irradiated with 700 MeV bismuth ions at 300 K has been studied using high resolution transmission electron microscopy. No latent tracks have been observed in Y 4 Al 2 O 9 particles in KP4 irradiated with Bi ions. Small oxides (~ 5 nm) in KP4 alloy remain crystalline at Bi ion fluence 1.5*10 13 cm -2 , while subsurface regions in large (~ 20 nm) particles faced to the beam entrance became amorphous. (authors)

  12. Defect production in natural diamond irradiated with high energy Ni ions

    International Nuclear Information System (INIS)

    Varichenko, V.S.; Martinovich, V.A.; Penina, N.M.; Zajtsev, A.M.; Stel'makh, V.F.; Didyk, A.Yu.; Fahrner, W.R.

    1995-01-01

    Defect production in diamond irradiated by 335 MeV Ni ions within a dose range of 5 · 10 12 - 5 · 10 14 cm -2 has been studied by electron paramagnetic resonance (EPR) method. The irradiation leads to the appearance in diamond lattice of quasi-one-dimensional track like structures with non tetrahedral atomic configurations. Possible mechanism of microwave conductivity in the modified structures is discussed. Peculiarities of depth distribution profile of concentration of paramagnetic centres in modified structures are explained by track channeling and by stopped ions because of their elastic collisions with lattice atoms during ion stopping. (author). 24 refs., 4 figs., 1 tab

  13. Simulating the ballistic effects of ion irradiation in the binary collision approximation: A first step toward the ion mixing framework

    International Nuclear Information System (INIS)

    Demange, G.; Antoshchenkova, E.; Hayoun, M.; Lunéville, L.; Simeone, D.

    2017-01-01

    Understanding ballistic effects induced by ion beam irradiation can be a key point for controlling and predicting the microstructure of irradiated materials. Meanwhile, the ion mixing framework suggests an average description of displacement cascades may be sufficient to estimate the influence of ballistic relocations on the microstructure. In this work, the BCA code MARLOWE was chosen for its ability to account for the crystal structure of irradiated materials. A first set of simulations was performed on pure copper for energies ranging from 0.5 keV to 20 keV. These simulations were validated using molecular dynamics (MD). A second set of simulations on AgCu irradiated by 1 MeV krypton ions was then carried out using MARLOWE only, as such energy is beyond reach for molecular dynamics. MARLOWE simulations are found to be in good agreement with experimental results, which suggests the predictive potential of the method.

  14. Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions

    International Nuclear Information System (INIS)

    Lulli, G.; Albertazzi, E.; Bianconi, M.; Ferri, M.

    2003-01-01

    Silicon on insulator layers doped with 8x10 20 As cm -3 and thermally equilibrated at 1100 deg. C, have been irradiated with 2 MeV Si + ions. Rutherford backscattering-channeling analysis shows an increase in As disorder upon irradiation significantly larger than the increase in Si disorder, while electrical measurements show a large decrease in electrical activation. Monte Carlo simulation of channeling angular scans suggests that the enhanced As disorder effect is due to the preferential relocation of dopant atoms slightly displaced from lattice sites, which appear the main reason responsible for the electrical deactivation in the unirradiated sample and are believed to be in the form of As-vacancy clusters. Upon 600 deg. C 15 s annealing, the As atoms randomly relocated by ion irradiation almost completely recover their original configuration, probably capturing vacancies and forming, again, the complexes dissociated by ion irradiation

  15. Simulating the ballistic effects of ion irradiation in the binary collision approximation: A first step toward the ion mixing framework

    Energy Technology Data Exchange (ETDEWEB)

    Demange, G., E-mail: gilles.demange@univ-rouen.fr [DEN/MDN/SRMA/LA2M, CEA Saclay, F-91191 Gif-sur-Yvette (France); Antoshchenkova, E. [DEN/MDN/SRMA/LA2M, CEA Saclay, F-91191 Gif-sur-Yvette (France); Hayoun, M. [LSI, École Polytechnique, CNRS, CEA Saclay, Université Paris-Saclay, F-91128 Palaiseau (France); Lunéville, L. [DEN/SERMA/LLPR, CEA Saclay, F-91191 Gif sur Yvette (France); Simeone, D. [DEN/MDN/SRMA/LA2M, CEA Saclay, F-91191 Gif-sur-Yvette (France)

    2017-04-01

    Understanding ballistic effects induced by ion beam irradiation can be a key point for controlling and predicting the microstructure of irradiated materials. Meanwhile, the ion mixing framework suggests an average description of displacement cascades may be sufficient to estimate the influence of ballistic relocations on the microstructure. In this work, the BCA code MARLOWE was chosen for its ability to account for the crystal structure of irradiated materials. A first set of simulations was performed on pure copper for energies ranging from 0.5 keV to 20 keV. These simulations were validated using molecular dynamics (MD). A second set of simulations on AgCu irradiated by 1 MeV krypton ions was then carried out using MARLOWE only, as such energy is beyond reach for molecular dynamics. MARLOWE simulations are found to be in good agreement with experimental results, which suggests the predictive potential of the method.

  16. Ion Irradiation Damage in Zirconate and Titanate Ceramics for Pu Disposition

    International Nuclear Information System (INIS)

    Stewart, Martin W.; Begg, Bruce D.; Finnie, K.; Colella, Michael; Li, H.; McLeod, Terry; Smith, Katherine L.; Zhang, Zhaoming; Weber, William J.; Thevuthasan, Suntharampillai

    2004-01-01

    In this paper, we discuss the effect of ion irradiation on pyrochlore-rich titanate and defect-fluorite zirconate ceramics designed for plutonium immobilization. Samples, with Ce as an analogue for Pu, were made via oxide routes and consolidated by cold-pressing and sintering. Ion irradiation damage was carried out with 2 MeV Au2+ ions to a fluence of 5 ions nm-2 in the accelerator facilities within the Environmental Molecular Sciences Laboratory at Pacific Northwest National Laboratory. Irradiated and non-irradiated samples were examined by x-ray diffraction, scanning and transmission electron microscopy, x-ray photoelectron and infrared spectroscopy, and spectroscopic ellipsometry. Samples underwent accelerated leach testing at pH 1.75 (nitric acid) at 90 C for 28 days. The zirconate samples were more ion-irradiation damage resistant than the titanate samples, showing little change after ion-irradiation whereas the titanate samples formed an amorphous surface layer ∼ 500 nm thick. While all samples had high aqueous durability, the titanate leach rate was ∼ 5 times that of the zirconate. The ion-irradiation increased the leach rate of the titanate without impurities by ∼ 5 times. The difference in the leach rates between irradiated and unirradiated zirconate samples is small. However, the zirconates were less able to incorporate impurities than the titanate ceramics and required higher sintering temperatures, ∼ 1500 C compared to 1350 C for the titanates.

  17. Heavy ion irradiation of astrophysical ice analogs

    International Nuclear Information System (INIS)

    Duarte, Eduardo Seperuelo; Domaracka, Alicja; Boduch, Philippe; Rothard, Hermann; Balanzat, Emmanuel; Dartois, Emmanuel; Pilling, Sergio; Farenzena, Lucio; Frota da Silveira, Enio

    2009-01-01

    Icy grain mantles consist of small molecules containing hydrogen, carbon, oxygen and nitrogen atoms (e.g. H 2 O, GO, CO 2 , NH 3 ). Such ices, present in different astrophysical environments (giant planets satellites, comets, dense clouds, and protoplanetary disks), are subjected to irradiation of different energetic particles: UV radiation, ion bombardment (solar and stellar wind as well as galactic cosmic rays), and secondary electrons due to cosmic ray ionization of H 2 . The interaction of these particles with astrophysical ice analogs has been the object of research over the last decades. However, there is a lack of information on the effects induced by the heavy ion component of cosmic rays in the electronic energy loss regime. The aim of the present work is to simulate of the astrophysical environment where ice mantles are exposed to the heavy ion cosmic ray irradiation. Sample ice films at 13 K were irradiated by nickel ions with energies in the 1-10 MeV/u range and analyzed by means of FTIR spectrometry. Nickel ions were used because their energy deposition is similar to that deposited by iron ions, which are particularly abundant cosmic rays amongst the heaviest ones. In this work the effects caused by nickel ions on condensed gases are studied (destruction and production of molecules as well as associated cross sections, sputtering yields) and compared with respective values for light ions and UV photons. (authors)

  18. Irradiation effects on c-axis lattice parameter in EuBa{sub 2}Cu{sub 3}O{sub y} irradiated with energetic ions

    Energy Technology Data Exchange (ETDEWEB)

    Ishikawa, Norito; Chimi, Yasuhiro; Iwase, Akihiro; Maeta, Hiroshi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Tsuru, Koji; Michikami, Osamu

    1997-03-01

    We report an irradiation effect on c-axis lattice parameter in EuBa{sub 2}Cu{sub 3}O{sub y} oxide superconductors when irradiated with ions of energy ranging from 0.85 to 200 MeV. For the irradiation with low energy (0.85-2 MeV) ions, the defect production and the resultant c-axis lattice expansion were dominated by elastic collisions. On the other hand, for the irradiation with high energy (120-200 MeV) ions, the change in the c-axis lattice parameter was found to be much greater than that expected from the elastic displacement of target atoms. For high energy ion irradiation we could observe the excessive increase of c-axis lattice parameter reflecting additional production of defects which can be attributed to the electronic excitation. The large increase in c-axis lattice parameter due to high energy ion irradiation should be taken into account for the study on the interaction between vortices and irradiation-induced defects. (author)

  19. Ion irradiation damage in ilmenite at 100 K

    International Nuclear Information System (INIS)

    Mitchell, J.N.; Yu, N.; Devanathan, R.; Sickafus, K.E.; Nastasi, M.A.

    1997-01-01

    A natural single crystal of ilmenite (FeTiO 3 ) was irradiated at 100 K with 200 keV Ar 2+ . Rutherford backscattering spectroscopy and ion channeling with MeV He + ions were used to monitor damage accumulation in the surface region of the implanted crystal. At an irradiation fluence of 1 x 10 15 Ar 2+ cm -2 , considerable near-surface He + ion dechanneling was observed, to the extent that ion yield from a portion of the aligned crystal spectrum reached the yield level of a random spectrum. This observation suggests that the near-surface region of the crystal was amorphized by the implantation. Cross-sectional transmission electron microscopy and electron diffraction on this sample confirmed the presence of a 150 nm thick amorphous layer. These results are compared to similar investigations on geikielite (MgTiO 3 ) and spinel (MgAl 2 O 4 ) to explore factors that may influence radiation damage response in oxides

  20. Ion irradiation damage in ilmenite at 100 K

    Science.gov (United States)

    Mitchell, J.N.; Yu, N.; Devanathan, R.; Sickafus, K.E.; Nastasi, M.A.; Nord, G.L.

    1997-01-01

    A natural single crystal of ilmenite (FeTiO3) was irradiated at 100 K with 200 keV Ar2+. Rutherford backscattering spectroscopy and ion channeling with 2 MeV He+ ions were used to monitor damage accumulation in the surface region of the implanted crystal. At an irradiation fluence of 1 ?? 1015 Ar2+/cm2, considerable near-surface He+ ion dechanneling was observed, to the extent that ion yield from a portion of the aligned crystal spectrum reached the yield level of a random spectrum. This observation suggests that the near-surface region of the crystal was amorphized by the implantation. Cross-sectional transmission electron microscopy and electron diffraction on this sample confirmed the presence of a 150 nm thick amorphous layer. These results are compared to similar investigations on geikielite (MgTiO3) and spinel (MgAl2O4) to explore factors that may influence radiation damage response in oxides.

  1. Effects of C3+ ion irradiation on structural, electrical and magnetic properties of Ni nanotubes

    Science.gov (United States)

    Shlimas, D. I.; Kozlovskiy, A. L.; Zdorovets, M. V.; Kadyrzhanov, K. K.; Uglov, V. V.; Kenzhina, I. E.; Shumskaya, E. E.; Kaniukov, E. Y.

    2018-03-01

    Ion irradiation is an attractive method for obtaining nanostructures that can be used under extreme conditions. Also, it is possible to control the technological process that allows obtaining nanomaterials with new properties at ion irradiation. In this paper, we study the effect of irradiation with 28 MeV C3+ ions and fluences up to 5 × 1011 cm-2 on the structure and properties of template-synthesized nickel nanotubes with a length of 12 μm, with diameters of 400 nm, and a wall thickness of 100 nm. It is demonstrated that the main factor influencing the degradation of nanostructures under irradiation in PET template is the processes of mixing the material of nanostructures with the surrounding polymer. The influence of irradiation with various fluences on the crystal structure, electrical and magnetic properties of nickel nanotubes is studied.

  2. Observation of transient lattice vacancies produced during high-energy ion irradiation of Ni foils

    International Nuclear Information System (INIS)

    Tsuchida, Hidetsugu; Iwai, Takeo; Awano, Misa; Kishida, Mutsumi; Katayama, Ichiro; Jeong, Sun-Chang; Ogawa, Hidemi; Sakamoto, Naoki; Komatsu, Masao; Itoh, Akio

    2007-01-01

    Real-time positron annihilation spectroscopy has been applied for the first time for the investigation of lattice vacancies produced during ion irradiation. Measurements were performed for thin nickel foils irradiated with 2.5 MeV C ions. Doppler broadenings of positron annihilation γ-rays were measured alternately during beam-on and beam-off conditions. It was found that the Doppler broadening line-shape parameter measured during irradiation is larger than those obtained before and after irradiation. This evidently implies that transient or non-survivable vacancy defects are produced during ion irradiation. On the other hand, no such significant change in the line-shape parameter was observed for other face-centred-cubic metal forms of aluminium

  3. Effects of ion irradiation on the mechanical properties of several polymers

    International Nuclear Information System (INIS)

    Sasuga, Tsuneo; Kawanishi, Shunichi; Nishi, Masanobu; Seguchi, Tadao

    1991-01-01

    The effects of high-energy ion irradiation on the tensile properties of polymers were studied under conditions in which ions should pass completely through the specimen and the results were compared with 2 MeV electron irradiation effects. Experiments were carried out on polymers having various constituents and molecular structures, i.e. eight aliphatic polymers and four aromatic polymers. In the aliphatic polymers studied there was scarcely any difference in the dose dependence of the tensile strength and ultimate elongation between proton and electron irradiation. In the aromatic polymers, however, the decrements in the tensile strength and ultimate elongation vs proton dose were less than those for electron irradiation. In heavy-ion irradiation, the radiation damage of PE (an aliphatic polymer) decreased with increase of LET, but no obvious LET effects were observed in PES (an aromatic polymer). (author)

  4. TEM study of damage recovery in SiC by swift Xe ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Skuratov, V.A., E-mail: skuratov@jinr.ru [Joint Institute for Nuclear Research, Dubna (Russian Federation); O’Connell, J. [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Sohatsky, A.S. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Neethling, J. [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2014-05-01

    The microstructure of 4H–SiC samples subsequently irradiated with low energy He (10 keV), Ti (220 keV) and high energy (167 MeV) Xe ions has been studied using cross-sectional transmission electron microscopy. It was found that xenon ions with fluences above 10{sup 13} cm{sup −2} restore crystallinity in a heavily damaged partially amorphous zone. No, or negligible damage recovery is observed in fully amorphized layers of silicon carbide.

  5. TEM study of damage recovery in SiC by swift Xe ion irradiation

    International Nuclear Information System (INIS)

    Skuratov, V.A.; O’Connell, J.; Sohatsky, A.S.; Neethling, J.

    2014-01-01

    The microstructure of 4H–SiC samples subsequently irradiated with low energy He (10 keV), Ti (220 keV) and high energy (167 MeV) Xe ions has been studied using cross-sectional transmission electron microscopy. It was found that xenon ions with fluences above 10 13 cm −2 restore crystallinity in a heavily damaged partially amorphous zone. No, or negligible damage recovery is observed in fully amorphized layers of silicon carbide

  6. Study of tapered glass capillary focusing MeV ion beam

    International Nuclear Information System (INIS)

    Gong Zhiyu; Yan Sha; Ma Hongji; Nie Rui; Xue Jianming; Wang Yugang

    2012-01-01

    In recent years, tapered glass capillary ion beam focusing is developing rapidly. It is attractive for simple, compact, low cost and easy use. However, the focusing mechanism for MeV ion beams is still indistinct. We present several experimental results of focusing 2 MeV He + beam. Ion beams were focused by tapered glass capillaries with various outlet inner diameters from several micron to hundred micron. The current densities, angle divergences and energy spectra of the transmitted ion beams are measured. The results proved that 2 MeV He + ions can focused and guided by our capillaries. The energy spectra show that a great part of transmitted ions experienced obvious energy loss, which is different from results of others research groups. We discussed the reason and charged it to the larger incident angle. Considered the incident ions with larger incident angle, the charge will distribute in a layer of micro meter depth in the capillary’s inner wall, but not the surface. The energy loss and many other spectra characters can be explained in this way.

  7. Disordering and amorphization of Zr3Al by 3.8 MeV Zr3+ ion bombardment

    International Nuclear Information System (INIS)

    Chen, F.C.; Ardell, A.J.

    1991-01-01

    The ordered intermetallic compound Zr 3 Al was irradiated with 3. 8 MeV Zr 3+ ions at various fluences up to 5 x 10 12 tons/mm 2 at a temperature of 250 degrees C and the irradiation- induced microstructures were investigated by transmission electron microscopy. Disordering began at the lowest dose, 0.0033 dpa, and complete loss of chemical long-range order occurred at a dose of 0.33 dpa. The onset of amorphization was also observed at this dose. Electron diffraction patterns from irradiated samples showed satellite reflections along in thin foils in [100] orientation and streaking along in foils oriented [011]. These diffraction effects are attributed to the presence of irradiation-induced microstructural defects that, when imaged in dark field, resemble rows of dislocation loops. A model of these arrays of loops, which are suggested to have Burgers vectors of the Frank type, is proposed. The model accounts for the contrast effects observed in the images and the streaking and satellites seen in the diffraction patterns. At the highest dose, 1.6 dpa, a new phase, Zr 5 Al 3 , appeared unexpectedly, most likely as a consequence of irradiation-induced solute segregation

  8. Effects of dual-ion irradiation on the swelling of SiC/SiC composites

    International Nuclear Information System (INIS)

    Kishimoto, Hirotatsu; Kohyama, Akira; Ozawa, Kazumi; Kondo, Sosuke

    2005-01-01

    Silicon carbide (SiC) matrix composites reinforced by SiC fibers is a candidate structural material of fusion gas-cooled blanket system. From the viewpoint of material designs, it is important to investigate the swelling by irradiation, which results from the accumulation of displacement damages. In the fusion environment, (n, α) nuclear reactions are considered to produce helium gas in SiC. For the microstructural evolution, a dual-ion irradiation method is able to simulate the effects of helium. In the present research, 1.7 MeV tandem and 1 MeV single-end accelerators were used for Si self-ion irradiation and helium implantation, respectively. The average helium over displacement per atom (dpa) ratio in SiC was adjusted to 60 appm/dpa. The irradiation temperature ranged from room temperature to 1400degC. The irradiation-induced swelling was measured by the step height method. Helium that was implanted simultaneously with displacement damages in dual-ion irradiated SiC increased the swelling that was larger than that by single-ion irradiated SiC below 800degC. Since this increase was not observed above 1000degC, the interaction of helium and displacement damages was considered to change above 800degC. In this paper, the microstructural behavior and dimensional stability of SiC materials under the fusion relevant environment are discussed. (author)

  9. Short Communication on "In-situ TEM ion irradiation investigations on U3Si2 at LWR temperatures"

    Science.gov (United States)

    Miao, Yinbin; Harp, Jason; Mo, Kun; Bhattacharya, Sumit; Baldo, Peter; Yacout, Abdellatif M.

    2017-02-01

    The radiation-induced amorphization of U3Si2 was investigated by in-situ transmission electron microscopy using 1 MeV Kr ion irradiation. Both arc-melted and sintered U3Si2 specimens were irradiated at room temperature to confirm the similarity in their responses to radiation. The sintered specimens were then irradiated at 350 °C and 550 °C up to 7.2 × 1015 ions/cm2 to examine their amorphization behavior under light water reactor (LWR) conditions. U3Si2 remains crystalline under irradiation at LWR temperatures. Oxidation of the material was observed at high irradiation doses.

  10. Ion irradiation studies of oxide ceramics

    International Nuclear Information System (INIS)

    Zinkle, S.J.

    1988-01-01

    This paper presents the initial results of an investigation of the depth-dependent microstructures of three oxide ceramics following ion implantation to moderate doses. The implantations were performed using ion species that occur as cations in the target material; for example, Mg + ions were used for MgO and MgAl 2 O 4 (spinel) irradiations. This minimized chemical effects associated with the implantation and allowed a more direct evaluation to be made of the effects of implanted ions on the microstructure. 11 refs., 14 figs

  11. MeV ion-beam analysis of optical data storage films

    Science.gov (United States)

    Leavitt, J. A.; Mcintyre, L. C., Jr.; Lin, Z.

    1993-01-01

    Our objectives are threefold: (1) to accurately characterize optical data storage films by MeV ion-beam analysis (IBA) for ODSC collaborators; (2) to develop new and/or improved analysis techniques; and (3) to expand the capabilities of the IBA facility itself. Using H-1(+), He-4(+), and N-15(++) ion beams in the 1.5 MeV to 10 MeV energy range from a 5.5 MV Van de Graaff accelerator, film thickness (in atoms/sq cm), stoichiometry, impurity concentration profiles, and crystalline structure were determined by Rutherford backscattering (RBS), high-energy backscattering, channeling, nuclear reaction analysis (NRA) and proton induced X-ray emission (PIXE). Most of these techniques are discussed in detail in the ODSC Annual Report (February 17, 1987), p. 74. The PIXE technique is briefly discussed in the ODSC Annual Report (March 15, 1991), p. 23.

  12. Photoluminescence and reflectivity studies of high energy light ions irradiated polymethyl methacrylate films

    Science.gov (United States)

    Bharti, Madhu Lata; Singh, Fouran; Ramola, R. C.; Joshi, Veena

    2017-11-01

    The self-standing films of non-conducting polymethyl methacrylate (PMMA) were irradiated in vacuum using high energy light ions (HELIs) of 50 MeV Lithium (Li+3) and 80 MeV Carbon (C+5) at various ion dose to induce the optical changes in the films. Upon HELI irradiation, films exhibit a significant enhancement in optical reflectivity at the highest dose. Interestingly, the photoluminescence (PL) emission band with green light at (514.5 nm) shows a noticeable increase in the intensity with increasing ion dose for both ions. However, the rate of increase in PL intensity is different for both HELI and can be correlated with the linear energy transfer by these ions in the films. Origin of PL is attributed to the formation of carbon cluster and hydrogenated amorphous carbon in the polymer films. HAC clusters act as PL active centres with optical reflectivity. Most of the harmful radiation like UV are absorbed by the material and is becoming opaque after irradiation and this PL active material are useful in fabrication of optoelectronic devices, UV-filter, back-lit components in liquid crystal display systems, micro-components for integrate optical circuits, diffractive elements, advanced materials and are also applicable to the post irradiation laser treatment by means of ion irradiation.

  13. Amorphization and recrystallization in MeV ion implanted InP crystals

    International Nuclear Information System (INIS)

    Xiong, F.; Nieh, C.W.; Jamieson, D.N.; Vreeland, T. Jr.; Tombrello, T.A.

    1988-01-01

    A comprehensive study of MeV- 15 N-ion-implanted InP by a variety of analytical techniques has revealed the physical processes involved in MeV ion implantation into III-V compound semiconductors as well as the influence of post-implantation annealing. It provides a coherent picture of implant distribution, structural transition, crystalline damage, and lattice strain in InP crystals induced by ion implantation and thermal annealing. The experimental results from the different measurements are summarized in this report. Mechanisms of amorphization by implantation and recrystallization through annealing in MeV-ion-implanted InP are proposed and discussed in light of the results obtained

  14. Effects of ion beam irradiation on semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Nashiyama, Isamu; Hirao, Toshio; Itoh, Hisayoshi; Ohshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    1997-03-01

    Energetic heavy-ion irradiation apparatus has been developed for single-event effects (SEE) testing. We have applied three irradiation methods such as a scattered-ion irradiation method, a recoiled-atom irradiation method, and a direct-beam irradiation method to perform SEE testing efficiently. (author)

  15. Preliminary microstructural characterization by transmission electron microscopy of 14 MeV neutron irradiated type 316 stainless steel

    International Nuclear Information System (INIS)

    Echer, C.J.

    1977-01-01

    Substantial changes in the mechanical properties of 316 stainless steel were observed after neutron irradiation (phi/sub t/ = 2.3 x 10 21 n/m 2 and E = 14 MeV) at 25 0 C. Comparison of microstructures of the unirradiated and neutron irradiated materials were evaluated using transmission electron microscopy. Evidence of small defect clusters in the irradiated material was found. These findings are consistent with other investigators also evaluating low dose irradiations

  16. Theoretical study of cylindrical energy analyzers for MeV range heavy ion beam probes

    International Nuclear Information System (INIS)

    Fujisawa, A.; Hamada, Y.

    1993-07-01

    A cylindrical energy analyzer with drift spaces is shown to have a second order focusing for beam incident angle when the deflection angle is properly chosen. The analyzer has a possibility to be applied to MeV range heavy ion beam probes, and will be also available for accurate particle energy measurements in many other fields. (author)

  17. Suppression of X-radiation from 2 MeV ion electrostatic accelerator

    International Nuclear Information System (INIS)

    Ignat'ev, I.G.; Miroshnichenko, V.I.; Sirenko, A.M.; Storizhko, V.E.

    2008-01-01

    The paper presents results concerning studies of X-radiation from 2 MeV ion electrostatic accelerator 'Sokol' used for nuclear microprobe analysis. The radiation protection system of the accelerator was developed and tested. Tests of the system of the accelerator show that it reduces doses rate by two orders of magnitude

  18. Effect of radiation quality on radical formation in ion-irradiated solid alanine

    Energy Technology Data Exchange (ETDEWEB)

    Koizumi, Hitoshi; Ichikawa, Tsuneki; Yoshida, Hiroshi [Hokkaido Univ., Sapporo (Japan); Namba, Hideki; Taguchi, Mitsumasa; Kojima, Takuji

    1997-03-01

    Radical formation in solid alanine irradiated with H{sup +} and He{sup +} ions of 0.5-3.0 MeV and with heavy ions of hundreds of MeV was examined by the ESR method. Radical yield is constant below a critical fluence, and the yield decreases above the fluence. The critical fluence for the H{sup +} and He{sup +} ions is about 10{sup 12} ions cm{sup -2}, while the critical fluence for the heavy ions is 10{sup 10}-10{sup 11} ions cm{sup -2}. G-value of the radical formation (radicals per 100 eV absorbed dose) is obtained from the constant yield at the low fluences. The G-value depends on the radiation quality. This dependence is ascribed to the difference of local dose in the ion tracks. The fluence-yield curves were simulated with a model assuming cylindrical shape of ion tracks and dose-yield relationship for {gamma}-irradiation. This model well explains the fluence-yield curves for the ion irradiations. (author)

  19. Lateral propagation of MeV electrons generated by femtosecond laser irradiation

    International Nuclear Information System (INIS)

    Seely, J. F.; Szabo, C. I.; Audebert, P.; Brambrink, E.; Tabakhoff, E.; Hudson, L. T.

    2010-01-01

    The propagation of MeV electrons generated by intense (≅10 20 W/cm 2 ) femtosecond laser irradiation, in the lateral direction perpendicular to the incident laser beam, was studied using targets consisting of irradiated metal wires and neighboring spectator wires embedded in electrically conductive (aluminum) or resistive (Teflon) substrates. The K shell spectra in the energy range 40-60 keV from wires of Gd, Dy, Hf, and W were recorded by a transmission crystal spectrometer. The spectra were produced by 1s electron ionization in the irradiated wire and by energetic electron propagation through the substrate material to the spectator wire of a different metal. The electron range and energy were determined from the relative K shell emissions from the irradiated and spectator wires separated by varying substrate lateral distances of up to 1 mm. It was found that electron propagation through Teflon was inhibited, compared to aluminum, implying a relatively weak return current and incomplete space-charge neutralization. The energetic electron propagation in the direction parallel to the electric field of the laser beam was larger than perpendicular to the electric field. Energetic electron production was lower when directly irradiating aluminum or Teflon compared to irradiating the heavy metal wires. These experiments are important for the determination of the energetic electron production mechanism and for understanding lateral electron propagation that can be detrimental to fast-ignition fusion and hard x-ray backlighter radiography.

  20. Mechanical properties and the evolution of matrix molecules in PTFE upon irradiation with MeV alpha particles

    International Nuclear Information System (INIS)

    Fisher, Gregory L.; Lakis, Rollin E.; Davis, Charles C.; Szakal, Christopher; Swadener, John G.; Wetteland, Christopher J.; Winograd, Nicholas

    2006-01-01

    The morphology, chemical composition, and mechanical properties in the surface region of α-irradiated polytetrafluoroethylene (PTFE) have been examined and compared to unirradiated specimens. Samples were irradiated with 5.5 MeV 4 He 2+ ions from a tandem accelerator to doses between 1 x 10 6 and 5 x 10 10 Rad. Static time-of-flight secondary ion mass spectrometry (ToF-SIMS), using a 20 keV C 60 + source, was employed to probe chemical changes as a function of α dose. Chemical images and high resolution spectra were collected and analyzed to reveal the effects of α particle radiation on the chemical structure. Residual gas analysis (RGA) was utilized to monitor the evolution of volatile species during vacuum irradiation of the samples. Scanning electron microscopy (SEM) was used to observe the morphological variation of samples with increasing α particle dose, and nanoindentation was engaged to determine the hardness and elastic modulus as a function of α dose. The data show that PTFE nominally retains its innate chemical structure and morphology at α doses 9 Rad. At α doses ≥10 9 Rad the polymer matrix experiences increased chemical degradation and morphological roughening which are accompanied by increased hardness and declining elasticity. At α doses >10 10 Rad the polymer matrix suffers severe chemical degradation and material loss. Chemical degradation is observed in ToF-SIMS by detection of ions that are indicative of fragmentation, unsaturation, and functionalization of molecules in the PTFE matrix. The mass spectra also expose the subtle trends of crosslinking within the α-irradiated polymer matrix. ToF-SIMS images support the assertion that chemical degradation is the result of α particle irradiation and show morphological roughening of the sample with increased α dose. High resolution SEM images more clearly illustrate the morphological roughening and the mass loss that accompanies high doses of α particles. RGA confirms the supposition that

  1. Atom probe tomography of the evolution of the nanostructure of oxide dispersion strengthened steels under ion irradiation

    Science.gov (United States)

    Orlov, N. N.; Rogozhkin, S. V.; Bogachev, A. A.; Korchuganova, O. A.; Nikitin, A. A.; Zaluzhnyi, A. G.; Kozodaev, M. A.; Kulevoy, T. V.; Kuibeda, R. P.; Fedin, P. A.; Chalykh, B. B.; Lindau, R.; Hoffmann, Ya.; Möslang, A.; Vladimirov, P.

    2017-09-01

    The atom probe tomography of the nanostructure evolution in ODS1 Eurofer, ODS 13.5Cr, and ODS 13.5Cr-0.3Ti steels under heavy ion irradiation at 300 and 573 K is performed. The samples were irradiated by 5.6 MeV Fe2+ ions and 4.8 MeV Ti2+ ions to a fluence of 1015 cm-2. It is shown that the number of nanoclusters increases by a factor of 2-3 after irradiation. The chemical composition of the clusters in the steels changes after irradiation at 300 K, whereas the chemical composition of the clusters in the 13.5Cr-0.3Ti ODS steel remains the same after irradiation at 573 K.

  2. Evaluation of strain-rate sensitivity of ion-irradiated austenitic steel using strain-rate jump nanoindentation tests

    Energy Technology Data Exchange (ETDEWEB)

    Kasada, Ryuta, E-mail: r-kasada@iae.kyoto-u.ac.jp [Institute of Advanced Energy, Kyoto University Gokasho, Uji 611-0011, Kyoto (Japan); Konishi, Satoshi [Institute of Advanced Energy, Kyoto University Gokasho, Uji 611-0011, Kyoto (Japan); Hamaguchi, Dai; Ando, Masami; Tanigawa, Hiroyasu [Japan Atomic Energy Agency, Rokkasho, Aomori (Japan)

    2016-11-01

    Highlights: • We examined strain-rate jump nanoindentation on ion-irradiated stainless steel. • We observed irradiation hardening of the ion-irradiated stainless steel. • We found that strain-rate sensitivity parameter was slightly decreased after the ion-irradiation. - Abstract: The present study investigated strain-rate sensitivity (SRS) of a single crystal Fe–15Cr–20Ni austenitic steel before and after 10.5 MeV Fe{sup 3+} ion-irradiation up to 10 dpa at 300 °C using a strain-rate jump (SRJ) nanoindentation test. It was found that the SRJ nanoindentation test is suitable for evaluating the SRS at strain-rates from 0.001 to 0.2 s{sup −1}. Indentation size effect was observed for depth dependence of nanoindentation hardness but not the SRS. The ion-irradiation increased the hardness at the shallow depth region but decreased the SRS slightly.

  3. Effect of helium on swelling and microstructural evolution in ion-irradiated V-15Cr-5Ti alloy

    International Nuclear Information System (INIS)

    Loomis, B.A.; Kestel, B.J.; Gerber, S.B.; Ayrault, G.

    1986-03-01

    An investigation was made on the effects of implanted helium on the swelling and microstructural evolution that results from energetic single- and dual-ion irradiation of the V-15Cr-5Ti alloy. Single-ion irradiations were utilized for a simulated production of the irradiation damage that might be expected from neutron irradiation of the alloy in a reactor with a fast neutron energy spectrum (E > 0.1 MeV). Dual-ion irradiations were utilized for a simulated production of the simultaneous creation of helium atoms and irradiation damage in the alloy in the MFR environment. Experimental results are also presented on the radiation-induced segregation of the constituent atoms in the single- and dual-ion irradiated alloy

  4. Heavy ion irradiation effects of brannerite-type ceramics

    International Nuclear Information System (INIS)

    Lian, J.; Wang, L.M.; Lumpkin, G.R.; Ewing, R.C.

    2002-01-01

    Brannerite, UTi 2 O 6 , occurs in polyphase Ti-based, crystalline ceramics that are under development for plutonium immobilization. In order to investigate radiation effects caused by α-decay events of Pu, a 1 MeV Kr + irradiation on UTi 2 O 6 , ThTi 2 O 6 , CeTi 2 O 6 and a more complex material, composed of Ca-containing brannerite and pyrochlore, was performed over a temperature range of 25-1020 K. The ion irradiation-induced crystalline-to-amorphous transformation was observed in all brannerite samples. The critical amorphization temperatures of the different brannerite compositions are: 970 K, UTi 2 O 6 ; 990 K, ThTi 2 O 6 ; 1020 K, CeTi 2 O 6 . The systematic increase in radiation resistance from Ce-, Th- to U-brannerite is related to the difference of mean atomic mass of A-site cation in the structure. As compared with the pyrochlore structure-type, brannerite phases are more susceptible to ion irradiation-induced amorphization. The effects of structure and chemical compositions on radiation resistance of brannerite-type and pyrochlore-type ceramics are discussed

  5. Study of the response of a silicon detector irradiated with 1 MeV neutrons; Etude de la reponse d`un detecteur Si irradie par des neutrons de 1 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Roy, P [Montreal Univ., PQ (Canada). Lab. de Physique Nucleaire

    1994-12-31

    The author studied the response of an n-type silicon detector irradiated with 1 MeV neutrons at fluences ranging from 0.26x10{sup 13} to 11.19x10{sup 13} neutrons/cm{sup 2}. The response of the irradiated detector to {sup 241}Am alpha particles was measured. 13 refs., 7 figs.

  6. Production of nanodiamonds by high-energy ion irradiation of graphite at room temperature

    International Nuclear Information System (INIS)

    Daulton, T.L.; Kirk, M.A.; Lewis, R.S.; Rehn, L.E.

    2001-01-01

    It has previously been shown that graphite can be transformed into diamond by MeV electron and ion irradiation at temperatures above approximately 600 deg. C. However, there exists geological evidence suggesting that carbonaceous materials can be transformed to diamond by irradiation at substantially lower temperatures. For example, submicron-size diamond aggregates have been found in uranium-rich, Precambrian carbonaceous deposits that never experienced high temperature or pressure. To test if diamonds can be formed at lower irradiation temperatures, sheets of fine-grain polycrystalline graphite were bombarded at 20 deg. C with 350±50 MeV Kr ions to fluences of 6x10 12 cm -2 using the Argonne tandem linear accelerator system (ATLAS). Ion-irradiated (and unirradiated control) graphite specimens were then subjected to acid dissolution treatments to remove untransformed graphite and isolate diamonds that were produced; these acid residues were subsequently characterized by high-resolution and analytical electron microscopy. The acid residue of the ion-irradiated graphite was found to contain nanodiamonds, demonstrating that ion irradiation of graphite at ambient temperature can produce diamond. The diamond yield under our irradiation conditions is low, ∼0.01 diamonds/ion. An important observation that emerges from comparing the present result with previous observations of diamond formation during irradiation is that nanodiamonds form under a surprisingly wide range of irradiation conditions. This propensity may be related to the very small difference in the graphite and diamond free-energies coupled with surface-energy considerations that may alter the relative stability of diamond and graphite at nanometer sizes

  7. Reorientation of the crystalline planes in confined single crystal nickel nanorods induced by heavy ion irradiation

    International Nuclear Information System (INIS)

    Misra, Abha; Tyagi, Pawan K.; Rai, Padmnabh; Misra, D. S.; Ghatak, Jay; Satyam, P. V.; Avasthi, D. K.

    2006-01-01

    In a recent letter Tyagi et al. [Appl. Phys. Lett. 86, 253110 (2005)] have reported the special orientation of nickel planes inside multiwalled carbon nanotubes (MWCNTs) with respect to the tube axis. Heavy ion irradiation has been performed with 1.5 MeV Au 2+ and 100 MeV Au 7+ ions on these nickel filled MWCNTs at fluences ranging from 10 12 to 10 15 ions/cm 2 at room temperature. Ion-induced modifications have been studied using high-resolution transmission electron microscopy. The diffraction pattern and the lattice imaging showed the presence of ion-induced planar defects on the tube walls and completely amorphized encapsulated nickel nanorods. The results are discussed in terms of thermal spike model

  8. Formation mechanism of SiC in C-Si system by ion irradiation

    International Nuclear Information System (INIS)

    Hishita, Shunichi; Aizawa, Takashi; Suehara, Shigeru; Haneda, Hajime

    2003-01-01

    The irradiation effects of 2 MeV He + , Ne + , and Ar + ions on the film structure of the C-Si system were investigated with RHEED and XPS. The ion dose dependence of the SiC formation was kinetically analyzed. The SiC formation at moderate temperature was achieved by 2 MeV ion irradiation when the thickness of the initial carbon films was appropriate. The evolution process of the SiC film thickness consisted of the 3 stages. The first stage was the steep increase of the SiC, and was governed by the inelastic collision. The second was the gentle increase of the SiC, and was governed by the diffusion. The last was the decrease of the SiC, and was caused by the sputtering. The formation mechanism of the SiC was discussed. (author)

  9. Chlorine diffusion in uranium dioxide under heavy ion irradiation

    International Nuclear Information System (INIS)

    Pipon, Y.; Bererd, N.; Moncoffre, N.; Peaucelle, C.; Toulhoat, N.; Jaffrezic, H.; Raimbault, L.; Sainsot, P.; Carlot, G.

    2007-01-01

    The radiation enhanced diffusion of chlorine in UO 2 during heavy ion irradiation is studied. In order to simulate the behaviour of 36 Cl, present as an impurity in UO 2 , 37 Cl has been implanted into the samples (projected range 200 nm). The samples were then irradiated with 63.5 MeV 127 I at two fluxes and two temperatures and the chlorine distribution was analyzed by SIMS. The results show that, during irradiation, the diffusion of the implanted chlorine is enhanced and slightly athermal with respect to pure thermal diffusion. A chlorine gain of 10% accumulating near the surface has been observed at 510 K. This corresponds to the displacement of pristine chlorine from a region of maximum defect concentration. This behaviour and the mean value of the apparent diffusion coefficient found for the implanted chlorine, around 2.5 x 10 -14 cm 2 s -1 , reflect the high mobility of chlorine in UO 2 during irradiation with fission products

  10. Chlorine diffusion in uranium dioxide under heavy ion irradiation

    Science.gov (United States)

    Pipon, Y.; Bérerd, N.; Moncoffre, N.; Peaucelle, C.; Toulhoat, N.; Jaffrézic, H.; Raimbault, L.; Sainsot, P.; Carlot, G.

    2007-04-01

    The radiation enhanced diffusion of chlorine in UO2 during heavy ion irradiation is studied. In order to simulate the behaviour of 36Cl, present as an impurity in UO2, 37Cl has been implanted into the samples (projected range 200 nm). The samples were then irradiated with 63.5 MeV 127I at two fluxes and two temperatures and the chlorine distribution was analyzed by SIMS. The results show that, during irradiation, the diffusion of the implanted chlorine is enhanced and slightly athermal with respect to pure thermal diffusion. A chlorine gain of 10% accumulating near the surface has been observed at 510 K. This corresponds to the displacement of pristine chlorine from a region of maximum defect concentration. This behaviour and the mean value of the apparent diffusion coefficient found for the implanted chlorine, around 2.5 × 10-14 cm2 s-1, reflect the high mobility of chlorine in UO2 during irradiation with fission products.

  11. Effect of ion irradiation on the surface, structural and mechanical properties of brass

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Shahbaz; Bashir, Shazia, E-mail: shaziabashir@gcu.edu.pk; Ali, Nisar; Umm-i-Kalsoom,; Yousaf, Daniel; Faizan-ul-Haq,; Naeem, Athar; Ahmad, Riaz; Khlaeeq-ur-Rahman, M.

    2014-04-01

    Highlights: • Brass targets were exposed to carbon ions of energy 2 MeV. • The effect of ion dose has been investigated. • The surface morphology is investigated by SEM analysis. • XRD analysis is performed to reveal structural modification. • Mechanical properties were investigated by tensile testing and microhardness testing. - Abstract: Modifications to the surface, structural and mechanical properties of brass after ion irradiation have been investigated. Brass targets were bombarded by carbon ions of 2 MeV energy from a Pelletron linear accelerator for various fluences ranging from 56 × 10{sup 12} to 26 × 10{sup 13} ions/cm{sup 2}. A scanning electron microscope and X-ray diffractometer were utilized to analyze the surface morphology and crystallographic structure respectively. To explore the mechanical properties e.g., yield stress, ultimate tensile strength and microhardness of irradiated brass, an universal tensile testing machine and Vickers microhardness tester were used. Scanning electron microscopy results revealed an irregular and randomly distributed sputter morphology for a lower ion fluence. With increasing ion fluence, the incoherently shaped structures were transformed into dendritic structures. Nano/micro sized craters and voids, along with the appearance of pits, were observed at the maximum ion fluence. From X-ray diffraction results, no new phases were observed to be formed in the brass upon irradiation. However, a change in the peak intensity and higher and lower angle shifting were observed, which represents the generation of ion-induced defects and stresses. Analyses confirmed modifications in the mechanical properties of irradiated brass. The yield stress, ultimate tensile strength and hardness initially decreased and then increased with increasing ion fluence. The changes in the mechanical properties of irradiated brass are well correlated with surface and crystallographic modifications and are attributed to the generation

  12. Effect of ion irradiation on the surface, structural and mechanical properties of brass

    Science.gov (United States)

    Ahmad, Shahbaz; Bashir, Shazia; Ali, Nisar; Umm-i-Kalsoom; Yousaf, Daniel; Faizan-ul-Haq; Naeem, Athar; Ahmad, Riaz; Khlaeeq-ur-Rahman, M.

    2014-04-01

    Modifications to the surface, structural and mechanical properties of brass after ion irradiation have been investigated. Brass targets were bombarded by carbon ions of 2 MeV energy from a Pelletron linear accelerator for various fluences ranging from 56 × 1012 to 26 × 1013 ions/cm2. A scanning electron microscope and X-ray diffractometer were utilized to analyze the surface morphology and crystallographic structure respectively. To explore the mechanical properties e.g., yield stress, ultimate tensile strength and microhardness of irradiated brass, an universal tensile testing machine and Vickers microhardness tester were used. Scanning electron microscopy results revealed an irregular and randomly distributed sputter morphology for a lower ion fluence. With increasing ion fluence, the incoherently shaped structures were transformed into dendritic structures. Nano/micro sized craters and voids, along with the appearance of pits, were observed at the maximum ion fluence. From X-ray diffraction results, no new phases were observed to be formed in the brass upon irradiation. However, a change in the peak intensity and higher and lower angle shifting were observed, which represents the generation of ion-induced defects and stresses. Analyses confirmed modifications in the mechanical properties of irradiated brass. The yield stress, ultimate tensile strength and hardness initially decreased and then increased with increasing ion fluence. The changes in the mechanical properties of irradiated brass are well correlated with surface and crystallographic modifications and are attributed to the generation, augmentation, recombination and annihilation of the ion-induced defects.

  13. Energy loss and straggling of MeV ions through biological samples

    International Nuclear Information System (INIS)

    Ma Lei; Wang Yugang; Xue Jianming; Chen Qizhong; Zhang Weiming; Zhang Yanwen

    2007-01-01

    Energy loss and energy straggling of energetic ions through natural dehydrated biological samples were investigated using transmission technique. Biological samples (onion membrane, egg coat, and tomato coat) with different mass thickness were studied, together with Mylar for comparison. The energy loss and energy straggling of MeV H and He ions after penetrating the biological and Mylar samples were measured. The experimental results show that the average energy losses of MeV ions through the biological samples are consistent with SRIM predictions; however, large deviation in energy straggling is observed between the measured results and the SRIM predictions. Taking into account inhomogeneity in mass density and structure of the biological sample, an energy straggling formula is suggested, and the experimental energy straggling values are well predicted by the proposed formula

  14. Development of an MeV ion beam lithography system in Jyvaeskylae

    Energy Technology Data Exchange (ETDEWEB)

    Gorelick, Sergey [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland)]. E-mail: Sergey.Gorelick@phys.jyu.fi; Ylimaeki, Tommi [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland); Sajavaara, Timo [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland); Laitinen, Mikko [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland); Sagari, A.R.A. [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland); Whitlow, Harry J. [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland)

    2007-07-15

    A lithographic facility for writing patterns with ion beams from cyclotron beams is under development for the Jyvaeskylae cyclotron. Instead of focusing and deflecting the beam with electrostatic and magnetic fields a different approach is used. Here a small rectangular beam spot is defined by the shadow of a computer-controlled variable aperture in close proximity to the sample. This allows parallel exposure of rectangular pattern elements of 5-500 {mu}m side with protons up to 6 MeV and heavy ions ({sup 20}Ne, {sup 85}Kr) up to few 100 MeV. Here we present a short overview of the system under construction and development of the aperture design, which is a critical aspect for all ion beam lithography systems.

  15. Surface structural determination of UO2(111) using MeV ions

    International Nuclear Information System (INIS)

    Thompson, K.A.; Ellis, W.P.; Taylor, T.N.; Valone, S.M.; Maggiore, C.J.

    1983-01-01

    The UO 2 (111) surface was studied using MeV ions incident along the and directions. In addition, this surface was well characterized by LEED and Auger analysis. A resonance at 3.05 MeV for 4 He elastic scattering from 16 O made it possible to study the surface peaks for uranium and oxygen simultaneously. By combining previous surface studies with detailed analysis of the surface peaks and rocking curves for this compound material, an outward relaxation of 0.19 A +- 0.01 A was determined for uranium

  16. Identification of defects in GaAs induced by 1 MeV electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Lai, S T; Nener, B D; Faraone, L; Nassibian, A G [Western Australia Univ., Nedlands, WA (Australia); Hotchkis, M A.C. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

    1994-12-31

    This paper shows that 1 MeV electron irradiation on n-type vapor phase epitaxial (VPE) GaAs creates three electron traps E1, E2 and EL6, and results in the splitting of the EL2 center into two levels EL2-A and EL2-B. A 15 minutes isochronal anneal results in the annihilation of the E1 and E2 traps, a reduction in EL6 trap concentration, and the return of EL2 to a single level EL2-A. A defect model is outlined which correlates with the observed results. 4 refs., 2 tabs., 3 figs.

  17. Identification of defects in GaAs induced by 1 MeV electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Lai, S.T.; Nener, B.D.; Faraone, L.; Nassibian, A.G. [Western Australia Univ., Nedlands, WA (Australia); Hotchkis, M.A.C. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

    1993-12-31

    This paper shows that 1 MeV electron irradiation on n-type vapor phase epitaxial (VPE) GaAs creates three electron traps E1, E2 and EL6, and results in the splitting of the EL2 center into two levels EL2-A and EL2-B. A 15 minutes isochronal anneal results in the annihilation of the E1 and E2 traps, a reduction in EL6 trap concentration, and the return of EL2 to a single level EL2-A. A defect model is outlined which correlates with the observed results. 4 refs., 2 tabs., 3 figs.

  18. Evaluation of cell behavior on modified polypropylene with swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Arbeitman, Claudia R.; Ibañez, Irene L.; García Bermúdez, Gerardo; Durán, Hebe; Grosso, Mariela F. del; Salguero, Noelia; Mazzei, Rubén

    2012-01-01

    Ion beam irradiation is a well known means to change the physico-chemical properties of polymers, and induced bio and citocompatibility in controlled conditions and in selected areas of surface. However, the enhancement of cell adhesion on a modified substrate does not mean that the surface is adequate for functional cells. The purpose of the present work is to study proliferation, changes in cytoskeleton and cell morphology on substrates as a function of irradiation parameters. We irradiated polypropylene with sulfur (S) ion-beam at energies of 110 MeV with fluences between 1 × 10 6 and 2 × 10 10 ions cm −2 . NIH 3T3 cells were cultured on each sample. Cell morphology was observed using phase contrast microscopy and cytoskeleton proteins with fluorescence microscopy. The analysis show different cellular responses as a functions of irradiation parameter, strongly suggests that different underlying substratum can result in distinct types of cytoskeleton reorganization.

  19. Swift heavy ion irradiation effects in Pt/C and Ni/C multilayers

    Science.gov (United States)

    Gupta, Ajay; Pandita, Suneel; Avasthi, D. K.; Lodha, G. S.; Nandedkar, R. V.

    1998-12-01

    Irradiation effects of 100 MeV Ag ion irradiation on Ni/C and Pt/C multilayers have been studied using X-ray reflectivity measurements. Modifications are observed in both the multilayers at (dE/dx)e values much below the threshold values for Ni and Pt. This effect is attributed to the discontinuous nature of the metal layers. In both the multilayers interfacial roughness increases with irradiation dose. While Ni/C multilayers exhibit large ion-beam induced intermixing, no observable intermixing is observed in the case of Pt/C multilayer. This difference in the behavior of the two systems suggests a significant role for chemically guided defect motion in the mixing process associated with swift heavy ion irradiation.

  20. Refractive index dispersion of swift heavy ion irradiated BFO thin films using Surface Plasmon Resonance technique

    International Nuclear Information System (INIS)

    Paliwal, Ayushi; Sharma, Savita; Tomar, Monika; Singh, Fouran; Gupta, Vinay

    2016-01-01

    Highlights: • Investigated the optical properties of BiFeO_3 (BFO) thin films after irradiation using SPR. • Otto configuration has been used to excite the surface plasmons using gold metal thin film. • BFO thin films were prepared by sol–gel spin coating technique. • Examined the refractive index dispersion of pristine and irradiated BFO thin film. - Abstract: Swift heavy ion irradiation (SHI) is an effective technique to induce defects for possible modifications in the material properties. There is growing interest in studying the optical properties of multiferroic BiFeO_3 (BFO) thin films for optoelectronic applications. In the present work, BFO thin films were prepared by sol–gel spin coating technique and were irradiated using the 15 UD Pelletron accelerator with 100 MeV Au"9"+ ions at a fluence of 1 × 10"1"2 ions cm"−"2. The as-grown films became rough and porous on ion irradiation. Surface Plasmon Resonance (SPR) technique has been identified as a highly sensitive and powerful technique for studying the optical properties of a dielectric material. Optical properties of BFO thin films, before and after irradiation were studied using SPR technique in Otto configuration. Refractive index is found to be decreasing from 2.27 to 2.14 on ion irradiation at a wavelength of 633 nm. Refractive index dispersion of BFO thin film (from 405 nm to 633 nm) before and after ion radiation was examined.

  1. Refractive index dispersion of swift heavy ion irradiated BFO thin films using Surface Plasmon Resonance technique

    Energy Technology Data Exchange (ETDEWEB)

    Paliwal, Ayushi [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Sharma, Savita [Department of Applied Physics, Delhi Technological University, Delhi (India); Tomar, Monika [Physics Department, Miranda House, University of Delhi, Delhi 110007 (India); Singh, Fouran [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110075 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

    2016-07-15

    Highlights: • Investigated the optical properties of BiFeO{sub 3} (BFO) thin films after irradiation using SPR. • Otto configuration has been used to excite the surface plasmons using gold metal thin film. • BFO thin films were prepared by sol–gel spin coating technique. • Examined the refractive index dispersion of pristine and irradiated BFO thin film. - Abstract: Swift heavy ion irradiation (SHI) is an effective technique to induce defects for possible modifications in the material properties. There is growing interest in studying the optical properties of multiferroic BiFeO{sub 3} (BFO) thin films for optoelectronic applications. In the present work, BFO thin films were prepared by sol–gel spin coating technique and were irradiated using the 15 UD Pelletron accelerator with 100 MeV Au{sup 9+} ions at a fluence of 1 × 10{sup 12} ions cm{sup −2}. The as-grown films became rough and porous on ion irradiation. Surface Plasmon Resonance (SPR) technique has been identified as a highly sensitive and powerful technique for studying the optical properties of a dielectric material. Optical properties of BFO thin films, before and after irradiation were studied using SPR technique in Otto configuration. Refractive index is found to be decreasing from 2.27 to 2.14 on ion irradiation at a wavelength of 633 nm. Refractive index dispersion of BFO thin film (from 405 nm to 633 nm) before and after ion radiation was examined.

  2. Positron annihilation lifetime characterization of oxygen ion irradiated rutile TiO2

    Science.gov (United States)

    Luitel, Homnath; Sarkar, A.; Chakrabarti, Mahuya; Chattopadhyay, S.; Asokan, K.; Sanyal, D.

    2016-07-01

    Ferromagnetic ordering at room temperature has been induced in rutile phase of TiO2 polycrystalline sample by O ion irradiation. 96 MeV O ion induced defects in rutile TiO2 sample has been characterized by positron annihilation spectroscopic techniques. Positron annihilation results indicate the formation of cation vacancy (VTi, Ti vacancy) in these irradiated TiO2 samples. Ab initio density functional theoretical calculations indicate that in TiO2 magnetic moment can be induced either by creating Ti or O vacancies.

  3. Depth distribution of displacement damage in α-iron under triple beam ion irradiation

    International Nuclear Information System (INIS)

    Horton, L.L.; Bentley, J.; Jesser, W.A.

    1981-01-01

    The depth dependence of the defect structures was determined for iron irradiated at 850 0 K with 4 MeV Fe 2+ and energetic helium and deuteron ions to 10 dpa and fusion levels of helium and deuterium. From the damage profiles, a sectioning depth of 0.9 μm was selected for studies of iron and bcc iron alloys, such as ferritic steels, utilizing similar irradiation parameters. A comparison of the experimental damage profile to the deposited energy and deposited ion profiles calculated by E-DEP-1 indicated a possible overestimate of the LSS stopping power of at least 22%

  4. Comparison of ion irradiation damage in three grades of unalloyed molybdenum

    International Nuclear Information System (INIS)

    Bradley, E.R.

    1976-01-01

    Transmission electron microscopy has been employed to characterize the ion irradiation damage in three grades of unalloyed molybdenum. The materials were irradiated with 5 MeV Ni 2+ ions at temperatures of 900 and 1000 0 C. Major differences exist in both the void and dislocation components of the damage and are attributed to differences in the carbon content of the three materials. A model, whereby carbon atoms segregate to small loops and decrease the bias for self interstitials, is used to qualitatively explain the observed variations in microstructure

  5. Nitridation of vanadium by ion beam irradiation

    International Nuclear Information System (INIS)

    Kiuchi, Masato; Chayahara, Akiyoshi; Kinomura, Atsushi; Ensinger, Wolfgang

    1994-01-01

    The nitridation of vanadium by ion beam irradiation is studied by the ion implantation method and the dynamic mixing method. The nitrogen ion implantation was carried out into deposited V(110) films. Using both methods, three phases are formed, i.e. α-V, β-V 2 N, and δ-VN. Which phases are formed is related to the implantation dose or the arrival ratio. The orientation of the VN films produced by the dynamic ion beam mixing method is (100) and that of the VN films produced by the ion implantation method is (111). The nitridation of vanadium is also discussed in comparison with that of titanium and chromium. ((orig.))

  6. Self-ion emulation of high dose neutron irradiated microstructure in stainless steels

    Science.gov (United States)

    Jiao, Z.; Michalicka, J.; Was, G. S.

    2018-04-01

    Solution-annealed 304L stainless steel (SS) was irradiated to 130 dpa at 380 °C, and to 15 dpa at 500 °C and 600 °C, and cold-worked 316 SS (CW 316 SS) was irradiated to 130 dpa at 380 °C using 5 MeV Fe++/Ni++ to produce microstructures and radiation-induced segregation (RIS) for comparison with that from neutron irradiation at 320 °C to 46 dpa in the BOR60 reactor. For the 304L SS alloy, self-ion irradiation at 380 °C produced a dislocation loop microstructure that was comparable to that by neutron irradiation. No voids were observed in either the 380 °C self-ion irradiation or the neutron irradiation conditions. Irradiation at 600 °C produced the best match to radiation-induced segregation of Cr and Ni with the neutron irradiation, consistent with the prediction of a large temperature shift by Mansur's invariant relations for RIS. For the CW 316 SS alloy irradiated to 130 dpa at 380 °C, both the irradiated microstructure (dislocation loops, precipitates and voids) and RIS reasonably matched the neutron-irradiated sample. The smaller temperature shift for RIS in CW 316 SS was likely due to the high sink (dislocation) density induced by the cold work. A single self-ion irradiation condition at a dose rate ∼1000× that in reactor does not match both dislocation loops and RIS in solution-annealed 304L SS. However, a single irradiation temperature produced a reasonable match with both the dislocation/precipitate microstructure and RIS in CW 316 SS, indicating that sink density is a critical factor in determining the temperature shift for self-ion irradiations.

  7. Rat mammary-cell survival following irradiation with 14.3-MeV neutrons

    International Nuclear Information System (INIS)

    Mahler, P.A.; Gould, M.N.; DeLuca, P.M. Jr.; Pearson, D.W.; Clifton, K.H.

    1982-01-01

    The survival of rat mammary gland cells irradiated in situ with either single or split doses of 14.3-MeV neutrons was determined by an in vivo transplantation assay. The single-dose data are best fit to the multitarget single-hit model by the parameters D 0 = 97 cGy and n = 0.6 while the split-dose data are best fit by the parameters D 0 = 100 cGy and n = 1.2. Analysis of the combined data sets suggests that the two survival curves are not identical. Comparison of these data with previously published results following irradiation with 250-kVp x-rays is reported

  8. Rat mammary cell survival following irradiation with 14.3-MeV neutrons

    International Nuclear Information System (INIS)

    Mahler, P.A.; Gould, M.N.; DeLuca, P.M. Jr.; Pearson, D.W.; Clifton, K.H.

    1982-01-01

    The survival of rat mammary gland cells irradiated in situ with either single or split doses of 14.3-MeV neutrons was determined by an in vivo transplantation assay. The single-dose data are best fit to the multitarget single-hit model by the parameters D/sub o/ = 97 cGy and n = 0.6 while the split-dose data are best fit by the parameters D/sub o/ = 100 cGy and n = 1.2.Analysis of the combined data sets suggests that the two survival curves are not identical. Comparison of these data with previously published results following irradiation with 250-kVp X rays is reported

  9. Genetic effects of heavy ion irradiation in maize and soybean

    International Nuclear Information System (INIS)

    Yatou, Osamu; Amano, Etsuo; Takahashi, Tan.

    1992-01-01

    Somatic mutation on leaves of maize and soybean were observed to investigate genetic effects of heavy ion irradiation. Maize seeds were irradiated with N, Fe and U ions and soybean seeds were irradiated with N ions. This is a preliminary report of the experiment, 1) to examine the mutagenic effects of the heavy ion irradiation, and 2) to evaluate the genetic effects of cosmic ray exposure in a space ship outside the earth. (author)

  10. STIM with energy loss contrast: An imaging modality unique to MeV ions

    International Nuclear Information System (INIS)

    Lefevre, H.W.; Schofield, R.M.S.; Bench, G.S.; Legge, G.J.F.

    1991-01-01

    Scanning transmission ion microscopy (STIM) through measurement of energy loss of individual ions is a quantitative imaging technique with several unique capabilities. The uniqueness derives conjointly from the large penetration with small scattering of MeV ions in low-Z specimens, from the simple relationship between energy loss and projected or areal density, and from the almost 100% efficiency with which one obtains pixel data from individual ions. Since contrast is in energy loss and not in numbers of events, the statistics of energy loss straggling affects the image but the statistics of counting does not. Small scattering makes it possible to observe details within transparent specimens. High efficiency makes it possible to collect large data sets for computed tomography, stereo, or high-definition imaging with a small radiation dose. High efficiency allows one to minimize aberrations by use of small apertures, to achieve good precision in the determination of areal density, or even to image live biological specimens in air since only one or a few ions per pixel are required. This paper includes a bibliography on STIM with MeV ions, it discusses the accuracy that one can achieve in the areal density coloring of a pixel with data from one or a few ions, and it supplements that review with recent examples from the Melbourne and the Eugene microprobes. (orig.)

  11. Ions irradiation on bi-layer coatings

    Science.gov (United States)

    Tessarolo, Enrico; Corso, Alain Jody; Böttger, Roman; Martucci, Alessandro; Pelizzo, Maria G.

    2017-09-01

    Future space missions will operate in very harsh and extreme environments. Optical and electronics components need to be optimized and qualified in view of such operational challenges. This work focuses on the effect of low alpha particles irradiation on coatings. Low energy He+ (4 keV and 16 keV) ions have been considered in order to simulate in laboratory the irradiation of solar wind (slow and fast components) alpha particles. Mono- and proper bi-layers coatings have been investigated. The experimental tests have been carried out changing doses as well as fluxes during the irradiation sessions. Optical characterization in the UV-VIS spectral range and superficial morphological analysis have performed prior and after irradiation.

  12. Freely migrating defects in ion-irradiated Cu3Au

    International Nuclear Information System (INIS)

    Wei, L.C.; Lang, E.; Flynn, C.P.; Averback, R.S.

    1999-01-01

    The efficiency of producing freely migrating vacancy defects in irradiated Cu 3 Au was examined using electrical resistivity measurements of radiation-induced ordering on highly perfect single-crystal films. Relative efficiencies for He, Ne, and Ar bombardments at different ion energy and specimen temperature were obtained. The ratio of the efficiencies of 0.6 MeV Ne to He increased with temperature from ∼0.25 at 340 K to a saturation value of ∼0.40 at 520 K. For Ar and He, the ratio increased from ∼0.11 at 360 K to ∼0.18 at 540 K. Estimates indicate that about half of all defects created in cascades are freely migrating. copyright 1999 American Institute of Physics

  13. Ion beam techniques for analyzing polymers irradiated by ions

    International Nuclear Information System (INIS)

    Rickards, J.; Zironi, E.P.; Andrade, E.; Dominguez, B.

    1992-01-01

    In the study of the effects of ion beam irradiation of polymers very large doses can be administered in short times. Thousands of MGy can be produced in a small volume of a sample in a few minutes by bombarding with typical ion beam currents. For instance, in an experiment done to observe the effects of 750 keV proton irradiation PVC, using a collimator of 1 mm diameter, 1 μC of charge integration deposits a dose of 50 MGy. The use of ion beams also opens up the possibility of using the same beam for irradiation and for analysis of the effects, using the well known ion beam analysis techniques. PIXE allows the measurement of chlorine in PVC. Polymers containing fluorine can be measured with the resonant nuclear reaction (RNR) technique, which is specific only to certain elements. The amount of hydrogen in the sample and its profile can be obtained using energy recoil detection analysis (ERDA); carbon, oxygen, and nitrogen can be measured and profiled using Rutherford backscattering (RBS) and also using the (d,p) and (d, α) nuclear reactions (NR). Loss of mass is one effect that can be studied using these techniques. It was studied in two different polymers, PVC and CR-39, in order to determine carbon buildup during ion irradiation. It was concluded that carbon builds up following different mechanisms in these two materials, due to the different possibilities of forming volatile compounds. It is also suggested that CR-39 should be a good material for ion beam lithography. (author)

  14. Irradiation effects of 6 MeV electron on electrical properties of Al/Al2O3/n-Si MOS capacitors

    International Nuclear Information System (INIS)

    Laha, P.; Banerjee, I.; Bajaj, A.; Chakraborty, P.; Barhai, P.K.; Dahiwale, S.S.; Das, A.K.; Bhoraskar, V.N.; Kim, D.; Mahapatra, S.K.

    2012-01-01

    The influence of 6 MeV electron irradiation on the electrical properties of Al/Al 2 O 3 /n-Si metal–oxide–semiconductor (MOS) capacitors has been investigated. Using rf magnetron sputtering deposition technique, Al/Al 2 O 3 /n-Si MOS capacitors were fabricated and such twelve capacitors were divided into four groups. The first group of MOS capacitors was not irradiated with 6 MeV electrons and treated as virgin. The second group, third group and fourth group of MOS capacitors were irradiated with 6 MeV electrons at 10 kGy, 20 kGy, and 30 kGy doses, respectively, keeping the dose rate ∼1 kGy/min. The variations in crystallinity of the virgin and irradiated MOS capacitors have been compared from GIXRD (Grazing Incidence X-ray Diffraction) spectra. Thickness and in-depth elemental distributions of individual layers were performed using Secondary Ion Mass Spectrometry (SIMS). The device parameters like flat band voltage (V FB ) and interface trap density (D it ) of virgin and irradiated MOS capacitors have been calculated from C vs V and G/ω vs V curve, respectively. The electrical properties of the capacitors were investigated from the tan δ vs V graph. The device parameters were estimated using C–V and G/ω–V measurements. Poole–Frenkel coefficient (β PF ) of the MOS capacitors was determined from leakage current (I)–voltage (V) measurement. The leakage current mechanism was proposed from the β PF value. - Highlights: ► The electron irradiation effects make variation in the device parameters. ► The device parameters changes due to percentage of defects and charge trapping. ► Leakage current of Al/Al 2 O 3 /n-Si changes due to interface dangling bonds. ► The leakage current mechanism of MOS structures is due to Poole-Frenkel effect.

  15. Ion shaking in the 200 MeV XLS-ring

    International Nuclear Information System (INIS)

    Bozoki, E.; Kramer, S.L.

    1992-01-01

    It has been shown that ions, trapped inside the beam's potential, can be removed by the clearing electrodes when the amplitude of the ion oscillation is increased by vertically shaking the ions. We will report on a similar experiment in the 200 Mev XLS ring. The design of the ion clearing system for the ring and the first results obtained, were already reported. In the present series of experiments, RF voltage was applied on a pair of vertical strip-lines. The frequency was scanned in the range of the ion (from H 2 to CO 2 ) bounce frequencies in the ring (1--10 MHz). The response of the beam size, vertical betatron tune and lifetime was studied

  16. Color center annealing and ageing in electron and ion-irradiated yttria-stabilized zirconia

    International Nuclear Information System (INIS)

    Costantini, Jean-Marc; Beuneu, Francois

    2005-01-01

    We have used X-band electron paramagnetic resonance (EPR) measurements at room-temperature (RT) to study the thermal annealing and RT ageing of color centers induced in yttria-stabilized zirconia (YSZ), i.e. ZrO 2 :Y with 9.5 mol% Y 2 O 3 , by swift electron and ion-irradiations. YSZ single crystals with the orientation were irradiated with 2.5 MeV electrons, and implanted with 100 MeV 13 C ions. Electron and ion beams produce the same two color centers, namely an F + -type center (singly ionized oxygen vacancy) and the so-called T-center (Zr 3+ in a trigonal oxygen local environment) which is also produced by X-ray irradiations. Isochronal annealing was performed in air up to 973 K. For both electron and ion irradiations, the defect densities are plotted versus temperature or time at various fluences. The influence of a thermal treatment at 1373 K of the YSZ single crystals under vacuum prior to the irradiations was also investigated. In these reduced samples, color centers are found to be more stable than in as-received samples. Two kinds of recovery processes are observed depending on fluence and heat treatment

  17. Local structure and defects in ion irradiated KTaO3

    Science.gov (United States)

    Zhang, F. X.; Xi, J.; Zhang, Y.; Tong, Yang; Xue, H.; Huang, R.; Trautmann, C.; Weber, W. J.

    2018-04-01

    The modification of the local structure in cubic perovskite KTaO3 irradiated with 3 MeV and 1.1 GeV Au ions is studied by Raman and x-ray absorption spectroscopy, complemented by density functional theory (DFT) calculations. In the case of irradiation with 3 MeV Au ions where displacement cascade processes are dominant, the Ta L3-edge x-ray absorption measurements suggest that a peak corresponding to the Ta-O bonds in the TaO6 octahedra splits, which is attributed to the formation of TaK antisite defects that are coupled with oxygen vacancies, V O. This finding is consistent with the DFT calculations. Under irradiation with 1.1 GeV ions, the intense ionization and electronic energy deposition lead to a blue shift and an intensity reduction of active Raman bands. In the case of sequential irradiations, extended x-ray absorption fine structure measurements reveal a decrease in concentration of coupled TaK-V O defects under subsequent irradiation with 1.1 GeV Au ions.

  18. Defect induced modification of structural, topographical and magnetic properties of zinc ferrite thin films by swift heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Raghavan, Lisha [Department of Physics, Cochin University of Science and Technology, Cochin 682022 (India); Inter University Accelerator Center, New Delhi 110067 (India); Joy, P.A. [National Chemical Laboratory, Pune (India); Vijaykumar, B. Varma; Ramanujan, R.V. [School of Materials Science and Engineering, Nanyang Technological University (Singapore); Anantharaman, M.R., E-mail: mraiyer@gmail.com [Department of Physics, Cochin University of Science and Technology, Cochin 682022 (India)

    2017-04-01

    Highlights: • Zinc ferrite films exhibited room temperature ferrimagnetic property. • On ion irradiation amorphisation of films were observed. • The surface morphology undergoes changes with ion irradiation. • The saturation magnetisation decreases on ion irradiation. - Abstract: Swift heavy ion irradiation provides unique ways to modify physical and chemical properties of materials. In ferrites, the magnetic properties can change significantly as a result of swift heavy ion irradiation. Zinc ferrite is an antiferromagnet with a Neel temperature of 10 K and exhibits anomalous magnetic properties in the nano regime. Ion irradiation can cause amorphisation of zinc ferrite thin films; thus the role of crystallinity on magnetic properties can be examined. The influence of surface topography in these thin films can also be studied. Zinc ferrite thin films, of thickness 320 nm, prepared by RF sputtering were irradiated with 100 MeV Ag ions. Structural characterization showed amorphisation and subsequent reduction in particle size. The change in magnetic properties due to irradiation was correlated with structural and topographical effects of ion irradiation. A rough estimation of ion track radius is done from the magnetic studies.

  19. Mechanical properties of organic composite materials irradiated with 2 MeV electrons

    International Nuclear Information System (INIS)

    Egusa, S.; Kirk, M.A.; Birtcher, R.C.; Argonne National Lab., IL; Hagiwara, M.; Kawanishi, S.

    1983-01-01

    Four kinds of cloth-filled organic composites (filter: glass or carbon fiber; matrix; epoxy or polyimide resin) were irradiated with 2 MeV electrons at room temperature, and were examined with regard to the mechanical properties. Following irradiation the Young's (tensile) modulus of these composites remains practically unchanged even after irradiation up to 15.000 Mrad. The shear modulus and the ultimate strength, on the other hand, begin to decrease after the absorbed dose reaches about 2.000 Mrad for the glass/epoxy composite and about 5.000-10.000 Mrad for the other composites. This result is ascribed to the decrease in the capacity of load transfer from the matrix to the fiber due to the radiation damage at the interface, and the dose dependence is interpreted and formulated based on the mechanics of composite materials and the target theory used in radiation biology. As to the fracture behavior, the propagation energy increases from the beginning of irradiation. This result is attributed to the radiation-induced decrease in the bonding energy at the interface. (orig.)

  20. Degradation of protective properties of oxide films on Zr-Nb alloys after neutron and ion irradiation

    International Nuclear Information System (INIS)

    Belykh, T.A.; Kruzhalov, A.V.; Neshov, F.G.; Matveev, A.V.; Perekhozhev, V.I.; Sinel'nikov, L.P.; Kozlov, A.V.; Kalachikov, V.E.

    2000-01-01

    Specimens of zirconium-niobium alloys with surface oxide films, which had been working in technological channels of boiling nuclear reactor and were irradiated with nitrogen (10 MeV) and carbon (9 MeV) ions, were investigated by the methods of electrochemical decoration and resistance measuring. The role of the radiation effect in the processes of nodular corrosion formation and development is studied [ru

  1. Accelerator based synthesis of hydroxyapatite by MeV ion implantation

    International Nuclear Information System (INIS)

    Rautray, Tapash R.; Narayanan, R.; Kwon, Tae-Yub; Kim, Kyo-Han

    2010-01-01

    Accelerator based MeV ion implantation of Ca 2+ and P 2+ into the titanium substrate to form hydroxyapatite (HA) has been carried out. Calcium hydroxide was formed after heating the calcium implanted titanium in air at 80 o C for 3 h. Upon subsequent annealing for 5 min at 600 o C HA was formed on the surface. Penetration depth of the HA layer in this method is much higher as compared to keV ion implantation. By elemental analysis, Ca/P ratio of the HA was found to be 1.76 which is higher than the ideal 1.67. This higher Ca/P ratio is attributed to the higher penetration depth of the MeV technique used.

  2. Tensile properties of several 800 MeV proton-irradiated bcc metals and alloys

    International Nuclear Information System (INIS)

    Brown, R.D.; Wechsler, M.S.; Tschalar, C.

    1987-01-01

    A spallation neutron source for the 600-MeV proton accelerator facility at the Swiss Institute for Nuclear Research (SIN) consists of a vertical cylinder filled with molten Pb-Bi. The proton beam enters the cylinder, passing upward through a window in contact with the Pb-Bi eutectic liquid that must retain reasonable strength and ductility upon irradiation at about 673 K to fluence of about 1 x 10/sup 25/ protons/m/sup 2/. Investigations are underway at the 800-MeV proton accelerator at the Los Alamos Meson Physics Facility (LAMPF) to test the performance of candidate SIN window materials under appropriate conditions of temperature, irradiation, and environment. Based on considerations of chemical compatibility with molten Pb-Bi, as well as interest in identifying fundamental radiation damage mechanisms, Fe, Ta, Fe-2.25Cr-1Mo, and Fe-12Cr-1Mo(HT-9) were chosen as candidate materials. Sheet tensile samples, 0.5-mm thick, of the four materials were fabricated and heat treated. The samples were sealed inside capsules containing Pb-Bi and were proton-irradiated at LAMPF to two fluences, 4.8 and 54 x 10/sup 23/ p/m/sup 2/. The beam current was approximately equal to the 1 mA anticipated for the upgraded SIN accelerator. The power deposited by the proton beam in the capsules was sufficient to maintain sample temperatures of about 673 K. Post-irradiation tensile tests were conducted at room temperature at a strain rate of 9 x 10/sup -4/s/sup -1/. The yield and ultimate strengths increased upon irradiation in all materials, while the ductility decreased, as indicated by the uniform strain. The pure metals, Ta and Fe, exhibited the greatest radiation hardening and embrittlement. The HT-9 alloy showed the smallest changes in strength and ductility. The increase in strength following irradiation is discussed in terms of a dispersed-barrier hardening model, for which the barrier sizes and formation cross sections are calculated

  3. Experimental modeling of high burn-up structure in SIMFUEL with ion irradiation

    International Nuclear Information System (INIS)

    Baranov, V.; Isaenkova, M.; Lunev, A.; Tenishev, A.; Khlunov, A.

    2013-01-01

    Experiments are conducted to simulate high burn-up structure in accelerator conditions. Three ion irradiation schemes are used: 1. Xe 27+ 160 MeV up to 5x10 15 cm -2 (thermal spikes). 2. Xe 16+ 320 keV up to 1x10 17 cm -2 (collision cascades). 3. He + 20 keV up to 5,5x10 17 cm -2 (implantation stage). Structural characterization performed by scanning electron microscopy, X-ray analysis and atomic force microscopy revealed prominent grain refinement in case of Xe 27+ irradiation. Artificial energy variation for incident ions showed varying size of subgrains. At maximum energy of incident ions, subgrain size amounts ∼ 320 nm. Moving to the edge of irradiated region changes the size to ∼ 170 nm. Typical size of coherent scattering regions matches subgrain size for high-energy irradiation. Low-energy irradiation results in less significant structural changes: flaky structure at random sites for samples irradiated with low-energy xenon ions and bubble nucleation for helium irradiation. Dislocation density increases significantly, and it is shown that a single fluence dependence exists for low- and high-energy irradiation. (authors)

  4. Vortex phase diagram in Bi2Sr2CaCuO8+δ with damage tracks created by 30 MeV fullerene irradiation

    International Nuclear Information System (INIS)

    Ishikawa, N.; Beek, C.J. van der; Dunlop, A.; Jaskierowicz, G.; Li, Ming; Kes, P.H.; Della-Negra, S.

    2004-01-01

    Using 30 MeV C 60 fullerene irradiation, we have produced latent tracks of diameter 20 nm and length 200 nm, near the surface of single crystalline Bi 2 Sr 2 CaCu 2 O 8+δ . A preliminary transmission electron microscopy study shows evidence for a very high density of deposited energy, and the ejection of material from the track core in very thin specimens. The latent tracks reveal themselves to be exceptionally strong pinning centers for vortices in the superconducting mixed state. Both the critical current density and magnetic irreversibility line are significantly enhanced. The irradiated crystals present salient features of the (B, T) phase diagram of vortex matter both of pristine crystals, such as the first order vortex phase transition, and the exponential Bose-glass line characteristic of heavy ion-irradiated crystals. We show that the latter is manifestly independent of the pinning potential. (author)

  5. Amorphization, morphological instability and crystallization of krypton ion irradiated germanium

    International Nuclear Information System (INIS)

    Wang, L.M.; Birtcher, R.C.

    1991-01-01

    Krypton ion irradiation of crystalline Ge and subsequent thermal annealing were both carried out with in situ transmission electron microscopy observations. The temperature dependence of the amorphization dose, effect of foil thickness, morphological changes during continuous irradiation of the amorphous state as well as the effect of implanted gas have been determined. The dose of 1.5 MeV Kr required for amorphization increases with increasing temperature. At a fixed temperature, the amorphization dose is higher for thicker regions of the specimen. Continuous irradiation of amorphous Ge at room temperature results in a high density of small cavities which grow with increasing dose. Cavities do not coalesce during growth but develop into irregular-shaped holes that eventually transform the amorphous Ge into a sponge-like material. Formation of the spongy structure is independent of Kr implantation. The crystallization temperature and the morphology of recrystallized Ge depend on the Kr + dose. Voids are expelled from recrystallized Ge, while the sponge-like structure is retained after crystallization. (author)

  6. In situ and ex situ characterization of the ion-irradiation effects in third generation SiC fibers

    International Nuclear Information System (INIS)

    Huguet-Garcia, Juan

    2015-01-01

    The use of third generation SiC fibers, Tyranno SA3 (TSA3) and Hi Nicalon S (HNS), as reinforcement for ceramic composites for nuclear applications requires the characterization of its structural stability and mechanical behavior under irradiation. Regarding the radiation stability, ion-amorphization kinetics of these fibers have been studied and compared to the model material, i.e. 6H-SiC single crystals, with no significant differences. For all samples, full amorphization threshold dose yields ∼0.4 dpa at room temperature and complete amorphization was not achieved for irradiation temperatures over 200 C. Successively, ion-amorphized samples have been thermally annealed. It is reported that thermal annealing at high temperatures not only induces the recrystallization of the ion-amorphized samples but also causes unrecoverable mechanical failure, i.e. cracking and delamination. Cracking is reported to be a thermally driven phenomenon characterized by activation energy of 1.05 eV. Regarding the mechanical irradiation behavior, irradiation creep of TSA3 fibers has been investigated using a tensile device dedicated to in situ tests coupled to two different ion-irradiation lines. It is reported that ion irradiation (12 MeV C 4+ and 92 MeV Xe 23+ ) induces a time-dependent strain under loads where thermal creep is negligible. In addition, irradiation strain is reported to be higher at low irradiation temperatures due to a coupling between irradiation swelling and irradiation creep. At high temperatures, near 1000 C, irradiation swelling is minimized hence allowing the characterization of the irradiation creep. Irradiation creep rate is characterized by a linear correlation between the ion flux and the strain rate and a square root dependence with the applied load. Finally, it has been reported that the higher the electronic energy loss contribution to the stopping regime the higher the irradiation creep of the fiber. (author) [fr

  7. Effects produced in GaAs by MeV ion bombardment

    International Nuclear Information System (INIS)

    Wie, C.R.

    1985-01-01

    The first part of this thesis presents work performed on the ionizing energy beam induced adhesion enhancement of thin (approx.500 A) Au films on GaAs substrates. The ionizing beam, employed in the present thesis, is the MeV ions (i.e., 16 O, 19 F, and 35 Cl), with energies between 1 and 20 MeV. Using the Scratch test for adhesion measurement, and ESCA for chemical analysis of the film substrate interface, the native oxide layer at the interface is shown to play an important role in the adhesion enhancement by the ionizing radiation. A model is discussed that explains the experimental data on the dependence of adhesion enhancement on the energy which was deposited into electronic processes at the interface. The second part of the thesis presents research results on the radiation damage in GaAs crystals produced by MeV ions. Lattice parameter dilatation in the surface layers of the GaAs crystals becomes saturated after a high dose bombardment at room temperature. The strain produced by nuclear collisions is shown to relax partially due to electronic excitation (with a functional dependence on the nuclear and electronic stopping power of bombarding ions. Data on the GaAs and GaP crystals suggest that low temperature recovery stage defects produce major crystal distortion

  8. Anisotropic dewetting of ion irradiated solid films

    Energy Technology Data Exchange (ETDEWEB)

    Repetto, L., E-mail: luca.repetto@unige.it [Dipartimento di fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy); Šetina Batič, B. [Inštitut Za Kovinske Materiale in Tehnologije, Lepi pot 11, 1000 Ljubljana (Slovenia); Firpo, G.; Piano, E.; Valbusa, U. [Dipartimento di fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy)

    2013-11-15

    Experiments of irradiation with 30 keV Ga ions were conducted on ultrathin chromium films on rippled silicon substrates. The evolution of their surface morphology, as detected by real time scanning electron microscopy, shows an apparent differential sputtering yield for regions of positive and negative curvature which is in contrast with the standard theory for curvature depending sputtering yield. In particular, at the end of the irradiation process, chromium wires are left in the valleys of the substrate. This result was explained in terms of local melting caused by the ion impact and of a process of dewetting under the concurring actions of surface tension and Van der Waals forces while ion sputtering is active. The interpretation of the reported experimental results are fully supported by numeric simulations implementing the same continuum model used to explain ion induced spinodal dewetting. This hierarchical self-organization process breaks the symmetry of previously demonstrated ion induced dewetting, making possible to create new structures by using the same fundamental effects.

  9. Anisotropic dislocation loop nucleation in ion-irradiated MgAl2O4

    International Nuclear Information System (INIS)

    Zinkle, S.J.

    1991-01-01

    Polycrystalline disks of stoichiometric magnesium aluminate spinel (MgAl 2 O 4 ) were irradiated with 2 MeV Al + ions at 650 degrees C and subsequently analyzed in cross-section using transmission electron microscopy (TEM). Interstitial dislocation loops were observed on 110 and 11 habit planes. The population of loops on both sets of habit planes was strongly dependent on their orientation with respect to the ion beam direction. The density of loops with habit plane normals nearly perpendicular to the ion beam direction much higher than loops with habit plane normals nearly parallel to the ion beam direction. On the other hand, the loop size was nearly independent of habit plane orientation. This anisotropic loop nucleation does not occur in ion-irradiated metals such as copper. An additional anomaly associated with ion-irradiated spinel is that the loops on 111 planes were partially unfaulted with a Burgers vector of b = a/4 . Previous neutron irradiation studies have never reported unfaulted loops in stoichiometric spinel. Possible cause of the unusual response of spinel to ion irradiation are discussed. 12 refs., 14 figs

  10. MeV ion induced damage production and accumulation in silicon

    International Nuclear Information System (INIS)

    Suzuki, Motoyuki; Okazaki, Makoto; Shin, Kazuo; Takagi, Ikuji; Yoshida, Koji

    1993-01-01

    Measurement and analysis were made for radiation damages in silicon induced by MeV ions. A single crystal silicon was bombarded by 800 keV O + and 700 keV Si + with the dose from 2x10 15 up to 8x10 15 cm -2 . And defects induced by the ion bombardments were observed by the channeling method. Some new modifications were made to the analysis of the channeling RBS spectrum so that the accuracy of the unfolded defect distribution may be improved. A new model of point-defect clustering and amorphous formation was proposed, which well reproduced the observed defect distribution in silicon. (author)

  11. Study of point defect clustering in electron and ion irradiated zirconium alloys

    International Nuclear Information System (INIS)

    Hellio, C.; Boulanger, L.

    1986-09-01

    Dislocation loops created by 500 keV Zr + ions and 1 MeV electrons in zirconium have a/3 type Burgers vectors, and in ion irradiated samples, loops lie preferentially on planes close to (1010). From in-situ observations of loop growth under 1 MeV electron irradiation in zirconium and dilute Zr (Nb,O) alloys, a strong increase of the vacancy migration energy with oxygen concentration was observed, from 0.72 eV for pure zirconium to 1.7 eV for Zr and Zr-1% Nb doped with 1800 ppm weight oxygen, indicating large trapping of vacancies by O single interstitials or clusters

  12. Mutation induced with ion beam irradiation in rose

    Energy Technology Data Exchange (ETDEWEB)

    Yamaguchi, H. E-mail: yhiroya@nias.affrc.go.jp; Nagatomi, S.; Morishita, T.; Degi, K.; Tanaka, A.; Shikazono, N.; Hase, Y

    2003-05-01

    The effects of mutation induction by ion beam irradiation on axillary buds in rose were investigated. Axillary buds were irradiated with carbon and helium ion beams, and the solid mutants emerged after irradiation by repeated cutting back. In helium ion irradiation, mutations were observed in plants derived from 9 buds among 56 irradiated buds in 'Orange Rosamini' and in plants derived from 10 buds among 61 irradiated buds in 'Red Minimo'. In carbon ion, mutations were observed in plants derived from 12 buds among 88 irradiated buds in 'Orange Rosamini'. Mutations were induced not only in higher doses but also in lower doses, with which physiological effect by irradiation was hardly observed. Irradiation with both ion beams induced mutants in the number of petals, in flower size, in flower shape and in flower color in each cultivar.

  13. Scanning ion irradiation of polyimide films

    Energy Technology Data Exchange (ETDEWEB)

    Luecken, Stefan; Koval, Yuri; Mueller, Paul [Department of Physics and Interdisciplinary Center for Molecular Materials (ICMM), Universitaet Erlangen-Nuernberg (Germany)

    2012-07-01

    Recently we found, that the surface of nearly any polymer can be converted into conductive material by low energy ion irradiation. The graphitized layer consists of nanometer sized graphene and graphite flakes. In order to enhance the conductivity and to increase the size of the flakes we applied a novel method of scanning irradiation. We investigated the influence of various irradiation parameters on the conductivity of the graphitized layer. We show, that the conductance vs. temperature can be described in terms of weak Anderson localization. At approximately 70 K, a crossover occurs from 2-dimensional to 3-dimensional behavior. This can be explained by a decrease of the Thouless length with increasing temperature. The crossover temperature can be used to estimate the thickness of the graphitized layer.

  14. Nanoscale Morphology Evolution Under Ion Irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Aziz, Michael J. [President & Fellows of Harvard College, Cambridge, MA (United States)

    2014-11-10

    We showed that the half-century-old paradigm of morphological instability under irradiation due to the curvature-dependence of the sputter yield, can account neither for the phase diagram nor the amplification or decay rates that we measure in the simplest possible experimental system -- an elemental semiconductor with an amorphous surface under noble-gas ion irradiation; We showed that a model of pattern formation based on the impact-induced redistribution of atoms that do not get sputtered away explains our experimental observations; We developed a first-principles, parameter-free approach for predicting morphology evolution, starting with molecular dynamics simulations of single ion impacts, lasting picoseconds, and upscaling through a rigorous crater-function formalism to develop a partial differential equation that predicts morphology evolution on time scales more than twelve orders of magnitude longer than can be covered by the molecular dynamics; We performed the first quantitative comparison of the contributions to morphological instability from sputter removal and from impact-induced redistribution of atoms that are removed, and showed that the former is negligible compared to the latter; We established a new paradigm for impact-induced morphology evolution based on crater functions that incorporate both redistribution and sputter effects; and We developed a model of nanopore closure by irradiation-induced stress and irradiationenhanced fluidity, for the near-surface irradiation regime in which nuclear stopping predominates, and showed that it explains many aspects of pore closure kinetics that we measure experimentally.

  15. Studying the destruction of various fluoropolymers caused by gamma - irradiation and MeV protons

    International Nuclear Information System (INIS)

    Allayarov, S.R.; Ol'khov, Yu.A.; Gordon, D.A.; Muntele, C.I.; Muntele, I.C.; Ila, D.; Dixon, D.A.; Kispert, L.D.; Nikolskij, V.G.

    2007-01-01

    While fluoropolymers are normally used as anti-adherent coating, they are intensely investigated for potential use in various radiation dosimeter applications as well as space technology. In order to understand the discrepancy between high chemical and thermal stability and low radiation stability of various fluoropolymers, we are bombarding them with 1 MeV protons to fluences up to 2·10 15 protons/cm 2 as well as subjected some of them to gamma-irradiation by dose of 10 kGy. During bombardment we are monitoring the emission of chemical species with a residual gas analyzer. Gamma-irradiated samples were tested by radio thermoluminescence method. The results we present here are a good indicator that material damage happens much earlier than 2·10 15 protons/cm 2 and that further work should be addressed at much smaller exposures. Radio thermoluminescence also can be used at small doses of irradiation (10-30 kGy). The thermomechanical curve of radiation-free polyvinyledenefluoride (PVDF) is characteristic for topologically di-block amorphous polymer of quasi-crossing structure. In the temperature range of from 173 K up to 228 K polymer is vitrified. The vitrification temperature of PVDF is 228 K. All molecular-relaxation and quantitative characteristics of PVDF were determined before and after its irradiation by protons. Protons caused significant changes in PVDF. From di-block amorphous it transformed in to amorphous-crystalline structure. An appreciable influence of dose at proton irradiation of polymer was revealed both on topological level and on molecular-relaxation one. (authors)

  16. 1.0 MeV irradiation of OHMIC, MS, MIS contacts to InP

    International Nuclear Information System (INIS)

    Warren, C.E.; Wagner, B.F.; Anderson, W.A.

    1986-01-01

    The radiation effects of 1.0 MeV electrons with a dose of 10/sup 15/cm/sup -2/ to MS and MIS Schottky diodes on InP have been compared to the radiation effects of MIS diodes on GaAs and Si. The radiation effects to ohmic contacts were also investigated. The metal for the diodes on the InP was gold. Au/Ti/Al was used for the GaAs diodes and Cr for the silicon diodes. Oxide layers on InP were grown by anodization in 0.1 N KOH. Oxides to GaAs and Si were grown thermally. Ohmic contacts to InP were formed using AuGe/Ni and AuSn alloys, followed by annealing in N/sub 2//H/sub 2/ (85%/15%). Metal Semiconductor diodes on InP were found to be at least sensitive to the irradiation. The InP MS and MIS diodes showed only small changes in the current voltage (I-V) characteristic, whereas the GaAs and Si devices showed a decrease in reverse current after irradiation. The ohmic contact resistance was increased by a factor of 2 to 5 after irradiation

  17. Influence of irradiation spectrum and implanted ions on the amorphization of ceramics

    International Nuclear Information System (INIS)

    Zinkle, S.J.; Snead, L.L.

    1995-01-01

    Polycrystalline Al2O3, magnesium aluminate spinel (MgAl2O4), MgO, Si3N4, and SiC were irradiated with various ions at 200-450 K, and microstructures were examined following irradiation using cross-section TEM. Amorphization was not observed in any of the irradiated oxide ceramics, despsite damage energy densities up to ∼7 keV/atom (70 displacements per atom). On the other hand, SiC readily amorphized after damage levels of ∼0.4 dpa at room temperature (RT). Si3N4 exhibited intermediate behavior; irradiation with Fe 2+ ions at RT produced amorphization in the implanted ion region after damage levels of ∼1 dpa. However, irradiated regions outside the implanted ion region did not amorphize even after damage levels > 5 dpa. The amorphous layer in the Fe-implanted region of Si3N4 did not appear if the specimen was simultaneoulsy irradiated with 1-MeV He + ions at RT. By comparison with published results, it is concluded that the implantation of certain chemical species has a pronounced effect on the amorphization threshold dose of all five materials. Intense ionizing radiation inhibits amorphization in Si3N4, but does not appear to significantly influence the amorphization of SiC

  18. Influence of He ions irradiation on the deuterium permeation and retention behavior in the CLF-1 steel

    International Nuclear Information System (INIS)

    Xu, Yu-Ping; Lu, Tao; Li, Xiao-Chun; Liu, Feng; Liu, Hao-Dong; Wang, Jing; An, Zhong-Qing; Ding, Fang; Hong, Suk-Ho; Zhou, Hai-Shan; Luo, Guang-Nan

    2016-01-01

    To evaluate the influence of He ions irradiation on the deuterium permeation and retention behavior in RAFM steels, samples made of the CLF-1 steel was irradiated with 3.5 MeV He ions. Gas driven permeation experiments were performed, and the permeability of virgin sample and pre-irradiated sample were obtained and compared. In order to characterize the effect of He ions irradiation on the deuterium retention behavior, deuterium gas exposure was carried out at 623 K, followed by thermal desorption spectra experiments. The total deuterium retention of the CLF-1 steel increased owing to He ions implantation, which could be attributed to the increase in trapping site for deuterium by the He pre-irradiation.

  19. Energetic Ion and Electron Irradiation of the Icy Galilean Satellites

    Science.gov (United States)

    Cooper, John F.; Johnson, Robert E.; Mauk, Barry H.; Garrett, Henry B.; Gehrels, Neil

    2001-01-01

    Galileo Orbiter measurements of energetic ions (20 keV to 100 MeV) and electrons (20-700 keV) in Jupiter's magnetosphere are used, in conjunction with the JPL electron model (less than 40 MeV), to compute irradiation effects in the surface layers of Europa, Ganymede, and Callisto. Significant elemental modifications are produced on unshielded surfaces to approximately centimeter depths in times of less than or equal to 10(exp 6) years, whereas micrometer depths on Europa are fully processed in approximately 10 years. Most observations of surface composition are limited to optical depths of approximately 1 mm, which are indirect contact with the space environment. Incident flux modeling includes Stormer deflection by the Ganymede dipole magnetic field, likely variable over that satellite's irradiation history. Delivered energy flux of approximately 8 x 10(exp 10) keV/square cm-s at Europa is comparable to total internal heat flux in the same units from tidal and radiogenic sources, while exceeding that for solar UV energies (greater than 6 eV) relevant to ice chemistry. Particle energy fluxes to Ganymede's equator and Callisto are similar at approximately 2-3 x 10(exp 8) keV/square cm-s with 5 x 10(exp 9) at Ganymede's polar cap, the latter being comparable to radiogenic energy input. Rates of change in optical reflectance and molecular composition on Europa, and on Ganymede's polar cap, are strongly driven by energy from irradiation, even in relatively young regions. Irradiation of nonice materials can produce SO2 and CO2, detected on Callisto and Europa, and simple to complex hydrocarbons. Iogenic neutral atoms and meteoroids deliver negligible energy approximately 10(exp 4-5) keV/square cm-s but impacts of the latter are important for burial or removal of irradiation products. Downward transport of radiation produced oxidants and hydrocarbons could deliver significant chemical energy into the satellite interiors for astrobiological evolution in putative sub

  20. Lactose and sucrose aqueous solutions for high-dose dosimetry with 10-MeV electron beam irradiation

    International Nuclear Information System (INIS)

    Amraei, R.; Kheirkhah, M.; Raisali, G.

    2012-01-01

    In the present study, dosimetric characterisation of aqueous solutions of lactose and sucrose was analysed by UV spectrometry following irradiation using 10-MeV electron beam at doses between 0.5 and 10.5 kGy. As a dosimetric index, absorbance is selected at 256 and 264 nm for lactose and sucrose aqueous solutions, respectively. The intensity of absorbance for irradiated solutions depends on the pre-irradiation concentration of lactose and sucrose. The post-irradiation stability of both solutions was investigated at room temperature for a measurement period of 22 d. (authors)

  1. Evolution of defects in a multicomponent glass irradiated by 1 MeV electrons

    International Nuclear Information System (INIS)

    Wang Qingyan; Geng Hongbin; Sun Chengyue; Zhang Zhonghua; He Shiyu

    2010-01-01

    The optical properties and microstructural degradation of a multicomponent glass after exposure to 1 MeV electrons for fluences of 10 13 to 10 16 e - /cm 2 , as well as the recovery during annealing at room temperature (RT) for the fluence of 10 16 e - /cm 2 , are investigated. The non-bridging oxygen hole centers (NBOHCs), as well as trapped electrons (TEs), are mainly attributed to optical absorption bands and paramagnetic spectra. In comparison of the exponential curves, the in-growth kinetics for each type of defect with increasing fluence are separable, and a new linearly-combined exponential model is used to describe the structural responses during irradiation. Accordingly, RT bleaching curves of defects follow a linearly-combined exponential decay function. Consistent results from optical and paramagnetic signals suggest that this linearly-combined model provides a reasonable kinetic description of the growth and bleaching process of defects.

  2. Measure of uranium enrichment by 14 MeV neutron irradiation

    International Nuclear Information System (INIS)

    Rezende, H.R.

    1987-01-01

    A non-destructive technique for the determination of uranium in UO 2 samples was developed, marking use of the change in the fission cross of a nuclide with the neutron energy. The active interrogation method was used by irradiating the samples with pulsed 14 MeV neutrons and furtherdetection of delayed fission neutrons. In order to descriminated U-238 from U-235 the neutron energy was tailored by means of two concentric cylinders of lead and paraffin/poliethylene, 11 and 4 cm thick. Between neutron pulses, delayed neutrons from fission were detected by a long counter built with five BF 3 proportional counters. Calibration curves for enrichment and total mass versus delayed neutron response were obtained using available UO 2 pellets of Known enrichment. Enrichment detection limit, obtained with 95% confidence level by the the Student distribution was estimated to be 0.33%. The minimal detectable mass was estimated to be 4.4 g. (Author) [pt

  3. Measurement of uranium enrichment by 14 MeV neutron irradiation

    International Nuclear Information System (INIS)

    Rezende, H.R.

    1987-01-01

    a non-destructive technique for the determination of uranium in UO 2 samples was developed, making use of the change in the fission cross section of a nuclide with the neutron energy. The active interrogation method was used by irradiating the samples with pulsed 14 MeV neutrons and further detection of delayed fission neutrons. In order to discriminate U-238 from U-235 the neutron energy was tailored by means of two concentric cylinders of lead and paraffin/poliethylene, 11 and 4 cm thick. Between neutron pulses, delayed neutrons from fission were detected by a long counter built with five BF 3 proportional counters. Calibration curves for enrichment and total mass versus delayed neutron response were obtained using available UO 2 pellets of known enrichment. Enrichment detection limit, obtained with 95% confidence level by the Student distribution was estimated to be 0.33%. The minimal detectable mass was estimated to be 4.4 g. (author) [pt

  4. The emittance and brightness characteristics of negative ion sources suitable for MeV ion implantation

    International Nuclear Information System (INIS)

    Alton, G.D.

    1987-01-01

    This paper provides the description and beam properties of ion sources suitable for use with ion implantation devices. Particular emphasis is placed on the emittance and brightness properties of state-of-the-art, high intensity, negative ion sources based on the cesium ion sputter principle

  5. Refractive index dispersion of swift heavy ion irradiated BFO thin films using Surface Plasmon Resonance technique

    Science.gov (United States)

    Paliwal, Ayushi; Sharma, Savita; Tomar, Monika; Singh, Fouran; Gupta, Vinay

    2016-07-01

    Swift heavy ion irradiation (SHI) is an effective technique to induce defects for possible modifications in the material properties. There is growing interest in studying the optical properties of multiferroic BiFeO3 (BFO) thin films for optoelectronic applications. In the present work, BFO thin films were prepared by sol-gel spin coating technique and were irradiated using the 15 UD Pelletron accelerator with 100 MeV Au9+ ions at a fluence of 1 × 1012 ions cm-2. The as-grown films became rough and porous on ion irradiation. Surface Plasmon Resonance (SPR) technique has been identified as a highly sensitive and powerful technique for studying the optical properties of a dielectric material. Optical properties of BFO thin films, before and after irradiation were studied using SPR technique in Otto configuration. Refractive index is found to be decreasing from 2.27 to 2.14 on ion irradiation at a wavelength of 633 nm. Refractive index dispersion of BFO thin film (from 405 nm to 633 nm) before and after ion radiation was examined.

  6. Imaging of single cells and tissue using MeV ions

    International Nuclear Information System (INIS)

    Watt, F.; Bettiol, A.A.; Kan, J.A. van; Ynsa, M.D.; Ren Minqin; Rajendran, R.; Cui Huifang; Sheu, F.-S.; Jenner, A.M.

    2009-01-01

    With the attainment of sub-100 nm high energy (MeV) ion beams, comes the opportunity to image cells and tissue at nano-dimensions. The advantage of MeV ion imaging is that the ions will penetrate whole cells, or relatively thick tissue sections, without any significant loss of resolution. In this paper, we demonstrate that whole cells (cultured N2A neuroblastoma cells ATCC) and tissue sections (rabbit pancreas tissue) can be imaged at sub-100 nm resolutions using scanning transmission ion microscopy (STIM), and that sub-cellular structural details can be identified. In addition to STIM imaging we have also demonstrated for the first time, that sub-cellular proton induced fluorescence imaging (on cultured N2A neuroblastoma cells ATCC) can also be carried out at resolutions of 200 nm, compared with 300-400 nm resolutions achieved by conventional optical fluorescence imaging. The combination of both techniques offers a potentially powerful tool in the quest for elucidating cell function, particularly when it should be possible in the near future to image down to sub-50 nm.

  7. High Fidelity Ion Beam Simulation of High Dose Neutron Irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Was, Gary; Wirth, Brian; Motta, Athur; Morgan, Dane; Kaoumi, Djamel; Hosemann, Peter; Odette, Robert

    2018-04-30

    Project Objective: The objective of this proposal is to demonstrate the capability to predict the evolution of microstructure and properties of structural materials in-reactor and at high doses, using ion irradiation as a surrogate for reactor irradiations. “Properties” includes both physical properties (irradiated microstructure) and the mechanical properties of the material. Demonstration of the capability to predict properties has two components. One is ion irradiation of a set of alloys to yield an irradiated microstructure and corresponding mechanical behavior that are substantially the same as results from neutron exposure in the appropriate reactor environment. Second is the capability to predict the irradiated microstructure and corresponding mechanical behavior on the basis of improved models, validated against both ion and reactor irradiations and verified against ion irradiations. Taken together, achievement of these objectives will yield an enhanced capability for simulating the behavior of materials in reactor irradiations

  8. Metal ion protection of DNA to fast neutron irradiation

    International Nuclear Information System (INIS)

    Constantinescu, B.; Bugoi, R.; Radulescu, I.; Radu, L.

    1998-01-01

    The most important effects of the ionising radiation are the single and double strand breaks (SSB and DBS), modifications of the DNA bases and deoxyribose, as well as the occurrence of alkali and heat labile sites (revealed as strand breaks after alkaline or thermic treatment of irradiated DNA). The ionising particles can have either direct effects on the DNA constituents or indirect effects, mediated by the OH - radicals, produced by water radiolysis. The occurrence of SSB and DSB in the chromatin DNA strands is supposed to hinder the DNA-dye complex formation. Usually, the dyes present different fluorescence parameters in the two possible states, so one can correlate the lifetime or the quantum yield with the extent of the damage. We took into account the protective effect offered both by histones, which behave as 'scavenger molecules' for OH - radicals and by the high compactness of DNA chromatin. Similar protective effects might be the results of the metallic ion addition which triggers some conformational transitions of the chromatin DNA towards a highly compacted structure. In this paper we present a study of the complexes of fast neutron irradiated chromatin with proflavine. Fluorimetric and time resolved spectroscopic determinations (single photon counting method) of chromatin-Pr complexes were realised. Information regarding the chromatin protein damage were obtained by monitoring the fluorescence of Trp. The chromatin was irradiated (20-100 Gy) with fast neutrons, obtained by the reaction of 13.5 MeV deuterons on a thick beryllium target at the IFIN-HH U-120 Cyclotron. The dose mean lineal energy in water at the point of interest was 50 keV/m and the mean dose rate was 1.5 Gy/min. By fluorescence determinations, changes of the Pr intercalation parameters in fast neutron irradiated chromatin DNA have been observed. Fluorescence techniques provide valuable information on the binding equilibrium by considering the radiation deexcitation of the complex. The

  9. In-situ observation system for dual ion irradiation damage

    International Nuclear Information System (INIS)

    Furuno, Shigemi; Hojou, Kiichi; Otsu, Hitoshi; Sasaki, T.A.; Izui, Kazuhiko; Tukamoto, Tetsuo; Hata, Takao.

    1992-01-01

    We have developed an in-situ observation and analysis system during dual ion beam irradiation in an electron microscope. This system consists of an analytical electron microscope of JEM-4000FX type equipped with a parallel EELS and an EDS attachments and linked with two sets of ion accelerators of 40 kV. Hydrogen and helium dual-ion beam irradiation experiments were performed for SiC crystals. The result of dual-ion beam irradiation was compared with those of helium and hydrogen single ion irradiations. It is clearly seen that the dual-ion irradiation has the effect of suppressing bubble formation and growth in comparison with the case of single helium ion irradiation. (author)

  10. An in-beam PET system for monitoring ion-beam therapy: test on phantoms using clinical 62 MeV protons

    Science.gov (United States)

    Camarlinghi, N.; Sportelli, G.; Battistoni, G.; Belcari, N.; Cecchetti, M.; Cirrone, G. A. P.; Cuttone, G.; Ferretti, S.; Kraan, A.; Retico, A.; Romano, F.; Sala, P.; Straub, K.; Tramontana, A.; Del Guerra, A.; Rosso, V.

    2014-04-01

    Ion therapy allows the delivery of highly conformal dose taking advantage of the sharp depth-dose distribution at the Bragg-peak. However, patient positioning errors and anatomical uncertainties can cause dose distortions. To exploit the full potential of ion therapy, an accurate monitoring system of the ion range is needed. Among the proposed methods to monitor the ion range, Positron Emission Tomography (PET) has proven to be the most mature technique, allowing to reconstruct the β+ activity generated in the patient by the nuclear interaction of the ions, that can be acquired during or after the treatment. Taking advantages of the spatial correlation between positron emitters created along the ions path and the dose distribution, it is possible to reconstruct the ion range. Due to the high single rates generated during the beam extraction, the acquisition of the β+ activity is typically performed after the irradiation (cyclotron) or in between the synchrotron spills. Indeed the single photon rate can be one or more orders of magnitude higher than normal for cyclotron. Therefore, acquiring the activity during the beam irradiation requires a detector with a very short dead time. In this work, the DoPET detector, capable of sustaining the high event rate generated during the cyclotron irradiation, is presented. The capability of the system to acquire data during and after the irradiation will be demonstrated by showing the reconstructed activity for different PMMA irradiations performed using clinical dose rates and the 62 MeV proton beam at the CATANA-LNS-INFN. The reconstructed activity widths will be compared with the results obtained by simulating the proton beam interaction with the FLUKA Monte Carlo. The presented data are in good agreement with the FLUKA Monte Carlo.

  11. An in-beam PET system for monitoring ion-beam therapy: test on phantoms using clinical 62 MeV protons

    International Nuclear Information System (INIS)

    Camarlinghi, N; Sportelli, G; Belcari, N; Cecchetti, M; Ferretti, S; Kraan, A; Retico, A; Straub, K; Guerra, A Del; Rosso, V; Battistoni, G; Sala, P; Cirrone, G A P; Cuttone, G; Romano, F; Tramontana, A

    2014-01-01

    Ion therapy allows the delivery of highly conformal dose taking advantage of the sharp depth-dose distribution at the Bragg-peak. However, patient positioning errors and anatomical uncertainties can cause dose distortions. To exploit the full potential of ion therapy, an accurate monitoring system of the ion range is needed. Among the proposed methods to monitor the ion range, Positron Emission Tomography (PET) has proven to be the most mature technique, allowing to reconstruct the β + activity generated in the patient by the nuclear interaction of the ions, that can be acquired during or after the treatment. Taking advantages of the spatial correlation between positron emitters created along the ions path and the dose distribution, it is possible to reconstruct the ion range. Due to the high single rates generated during the beam extraction, the acquisition of the β + activity is typically performed after the irradiation (cyclotron) or in between the synchrotron spills. Indeed the single photon rate can be one or more orders of magnitude higher than normal for cyclotron. Therefore, acquiring the activity during the beam irradiation requires a detector with a very short dead time. In this work, the DoPET detector, capable of sustaining the high event rate generated during the cyclotron irradiation, is presented. The capability of the system to acquire data during and after the irradiation will be demonstrated by showing the reconstructed activity for different PMMA irradiations performed using clinical dose rates and the 62 MeV proton beam at the CATANA-LNS-INFN. The reconstructed activity widths will be compared with the results obtained by simulating the proton beam interaction with the FLUKA Monte Carlo. The presented data are in good agreement with the FLUKA Monte Carlo

  12. Increase of the electrical resistance of thin aluminium film due to 14 MeV neutron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Agrawal, S K; Kumar, U; Singh, S P; Bhattacharya, S; Nigam, A K [Banaras Hindu Univ. (India). Dept. of Physics

    1978-01-01

    The effect of 14 MeV neutron bombardment on the electrical resistance of 500 A thick vacuum-coated Al film is investigated. In the beginning, a slow, then sharp and finally again slow increase is observed in the electrical resistance of the film. Transmission electron micrographs of the film after the same dose of neutron irradiation show a large number of defects produced in the film due to neutron irradiation, which seems to be the cause of this increase.

  13. Influence of alloying elements on the dislocation loops created by Zr+ ion irradiation in alpha-zirconium

    International Nuclear Information System (INIS)

    Hellio, C.; Novion, C.H. de; Boulanger, L.

    1987-01-01

    Pure zirconium and four (annealed) α - zirconium based alloys (Zr-1760 ppm weight 0, Zr - 1% Nb - 430 ppm 0, Zr-1% Nb-1800 ppm 0, zircaloy 4) have been studied by transmission electron microscopy after 500 keV Zr + ion or 1 MeV electron irradiation performed at high temperature. Type of burgers vectors of the dislocation loops are given; in the case of electron irradiated Zr-1760 ppm 0, the larger loops were found of interstitial type. Alloying elements increase the loop density. The kinetic of loop growth was observed in-situ during 1 MeV electron irradiation between 400 and 700 0 C: oxygen was found to reduce considerably the growth speed of loops. In-situ annealing at 450 or 500 0 C after ion irradiation led to a large coalescence of loops in the case of pure zirconium, but modified only slightly the defect structure of the alloys

  14. Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

    International Nuclear Information System (INIS)

    Bhoraskar, V.N.

    2001-01-01

    The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

  15. Energy loss of carbon transmitted 1-MeV H2+ ions

    International Nuclear Information System (INIS)

    Fritz, M.; Kimura, K.; Susuki, Y.; Mannami, M.

    1994-01-01

    Energy losses of 1-MeV H 2 + ions passing through carbon foils of 2-8 μg/cm 2 thickness have been measured and show besides the linear increase with target thickness a 0.4 keV offset. The stopping power derived from the observed energy losses is 1.15 times as large as the sum of the stopping powers for two single H + of the same velocity. Calculations of the stopping powers for H 2 + ions and diprotons, using first Born approximation, indicate that the H 2 + ions lose the binding electron upon entrance into the foil, traverse the target as diprotons and recapture target electrons at the exit surface, a scenario also supported by the 0.4 keV offset at zero thickness. (author)

  16. New source of MeV negative ion and neutral atom beams

    Energy Technology Data Exchange (ETDEWEB)

    Ter-Avetisyan, S., E-mail: sargis@gist.ac.kr [Center for Relativistic Laser Science, Institute for Basic Science (IBS), Gwangju 500-712 (Korea, Republic of); Department of Physics and Photon Science, GIST, Gwangju 500-712 (Korea, Republic of); Braenzel, J.; Schnürer, M. [Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, Berlin 12489 (Germany); Prasad, R. [Institute for Laser and Plasma Physics, Heinrich Heine University, Duesseldorf 40225 (Germany); Borghesi, M. [School of Mathematics and Physics, The Queen’s University of Belfast, Belfast BT7-1NN (United Kingdom); Jequier, S.; Tikhonchuk, V. [Centre Lasers Intenses et Applications, CEA, CNRS, University of Bordeaux, 33405 Talence (France)

    2016-02-15

    The scenario of “electron-capture and -loss” was recently proposed for the formation of negative ion and neutral atom beams with MeV kinetic energies. However, it does not explain why the formation of negative ions in a liquid spray is much more efficient than with an isolated atom. The role of atomic excited states in the charge-exchange processes is considered, and it is shown that it cannot account for the observed phenomena. The processes are more complex than the single electron-capture and -loss approach. It is suggested that the shell effects in the electronic structure of the projectile ion and/or target atoms may influence the capture/loss probabilities.

  17. New source of MeV negative ion and neutral atom beams

    International Nuclear Information System (INIS)

    Ter-Avetisyan, S.; Braenzel, J.; Schnürer, M.; Prasad, R.; Borghesi, M.; Jequier, S.; Tikhonchuk, V.

    2016-01-01

    The scenario of “electron-capture and -loss” was recently proposed for the formation of negative ion and neutral atom beams with MeV kinetic energies. However, it does not explain why the formation of negative ions in a liquid spray is much more efficient than with an isolated atom. The role of atomic excited states in the charge-exchange processes is considered, and it is shown that it cannot account for the observed phenomena. The processes are more complex than the single electron-capture and -loss approach. It is suggested that the shell effects in the electronic structure of the projectile ion and/or target atoms may influence the capture/loss probabilities

  18. Measurement and modelling of the radiation damage of silicon by MeV Ag ions

    International Nuclear Information System (INIS)

    Lindner, J.K.N.; Eder, J.; Stritzker, B.

    1999-01-01

    Depth profiles of the radiation damage produced by 4 MeV Ag ions in Si(111) at temperatures of 210--450 K are studied by optical reflectivity depth profiling and TEM for doses between 10 12 and 10 15 Ag/cm 2 . For high implantation temperatures, the depth of maximum damage is shown to be dose dependent. Point defect diffusion is shown to result in long tails of defect depth profiles. High-temperature amorphization is observed to proceed via the formation and bridge-like coalescence of isolated amorphous volumina. The damage at the depth of the maximum in the nuclear stopping power is described as a function of dose and temperature by the Hecking model. The model parameters and a comparison with those obtained for lighter ions reflect the particular properties of heavy ion collision cascades

  19. Toxicological and radiological safety of chicken meat irradiated with 7.5 MeV X-rays

    Science.gov (United States)

    Song, Beom-Seok; Lee, Yunjong; Park, Jong-Heum; Kim, Jae-Kyung; Park, Ha-Young; Kim, Dong-Ho; Kim, Chang-Jong; Kang, Il-Jun

    2018-03-01

    This study was conducted to evaluate the toxicological and radiological safety of chicken meat that had been irradiated at 30 kGy with 7.5 MeV X-rays. In a sub-chronic toxicity study, ICR mice were fed X-ray-irradiated chicken meat at 2500 mg/kg body weight daily for 90 days, and no mortality or abnormal clinical signs were observed throughout the study period. However, several hematological and serum biochemical parameters of the ICR mice differed significantly from those in the control group; nevertheless, the observed values were all within the normal range for the respective parameters. In addition, no toxicological effects were determined in male or female mice. Furthermore, no differences in gamma-ray spectrometric patterns were detected between the non-irradiated and irradiated samples, indicating that the radioactivity induced by 7.5 MeV X-ray irradiation was below the detection limit. These results tentatively suggest that chicken meat irradiated with 7.5 MeV X-rays would be safe for human consumption in terms of toxicology and radiology.

  20. In-situ transport and microstructural evolution in GaN Schottky diodes and epilayers exposed to swift heavy ion irradiation

    Science.gov (United States)

    Kumar, Ashish; Singh, R.; Kumar, Parmod; Singh, Udai B.; Asokan, K.; Karaseov, Platon A.; Titov, Andrei I.; Kanjilal, D.

    2018-04-01

    A systematic investigation of radiation hardness of Schottky barrier diodes and GaN epitaxial layers is carried out by employing in-situ electrical resistivity and cross sectional transmission electron microscopy (XTEM) microstructure measurements. The change in the current transport mechanism of Au/n-GaN Schottky barrier diodes due to irradiation is reported. The role of irradiation temperature and ion type was also investigated. Creation of damage is studied in low and medium electron energy loss regimes by selecting different ions, Ag (200 MeV) and O (100 MeV) at various fluences at two irradiation temperatures (80 K and 300 K). GaN resistivity increases up to 6 orders of magnitude under heavy Ag ions. Light O ion irradiation has a much lower influence on sheet resistance. The presence of isolated defect clusters in irradiated GaN epilayers is evident in XTEM investigation which is explained on the basis of the thermal spike model.

  1. Dislocation Loops with a Burgers Vector Produced by 1 MeV Electron Irradiation in FCC Copper-Nickel

    DEFF Research Database (Denmark)

    Leffers, Torben; Barlow, P.

    1975-01-01

    Dislocation loops with Burgers vector a are formed in Cu-Ni alloys during 1 MeV electron irradiation in a high-voltage electron microscope at 350°-400°C. The dislocation loops are of interstitial type and pure edge in character with line vectors. Some of the loops are seen to dissociate into loop...

  2. Electrical and optical behavior of ZnO nanowires irradiated by ion beam

    DEFF Research Database (Denmark)

    Lisevski, Caroline I.; Fernandes Cauduro, André Luis; Franzen, Paulo L

    2015-01-01

    Zinc oxide nanowires have been attracting much interest due to their potential use in electronics and optoelectonics devices. In this work, we report on the photoluminescence and electrical behavior of ZnO nanowires grown by vapor-liquid-solid method and irradiated with 1.2 MeV He+ ions at several...... doses. The results strongly indicates the existence of an enhanced dynamic annealing effect during the low fluence irradiations allowing it to heal low migration barrier point-defects such as oxygen interstitials (OI), zinc interstitials (ZnI), zinc antisites (ZnO) and oxygen antisites (OZn...

  3. Determining the stereochemical structures of molecular ions by ''Coulomb-explosion'' techniques with fast (MeV) molecular ion beams

    International Nuclear Information System (INIS)

    Gemmell, D.S.

    1980-01-01

    Recent studies on the dissociation of fast (MeV) molecular ion beams in thin foils suggest a novel alternative approach to the determination of molecular ion structures. In this article we review some recent high-resolution studies on the interactions of fast molecular ion beams with solid and gaseous targets and indicate how such studies may be applied to the problem of determining molecular ion structures. The main features of the Coulomb explosion of fast-moving molecular ion projectiles and the manner in which Coulomb-explosion techniques may be applied to the problem (difficult to attack by more conventional means) of determining the stereochemical structures of molecular ions has been described in this paper. Examples have been given of early experiments designed to elicit structure information. The techniques are still in their infancy, and it is to be expected that as both the technology and the analysis are refined, the method will make valuable contributions to the determination of molecular ion structures

  4. Materials Modification Under Ion Irradiation: JANNUS Project

    International Nuclear Information System (INIS)

    Serruys, Y.; Trocellier, P.; Ruault, M.-O.; Henry, S.; Kaietasov, O.; Trouslard, Ph.

    2004-01-01

    JANNUS (Joint Accelerators for Nano-Science and Nuclear Simulation) is a project designed to study the modification of materials using multiple ion beams and in-situ TEM observation. It will be a unique facility in Europe for the study of irradiation effects, the simulation of material damage due to irradiation and in particular of combined effects. The project is also intended to bring together experimental and modelling teams for a mutual fertilisation of their activities. It will also contribute to the teaching of particle-matter interactions and their applications. JANNUS will be composed of three accelerators with a common experimental chamber and of two accelerators coupled to a 200 kV TEM

  5. Comparison of secondary ion emission induced in silicon oxide by MeV and KeV ion bombardment

    International Nuclear Information System (INIS)

    Allali, H.; Nsouli, B.; Thomas, J.P.; Szymczak, W.; Wittmaack, K.

    1993-09-01

    The surface and near-surface composition of SiO 2 layers, has been investigated by negative secondary ion emission mass spectrometry (SIMS) using MeV and KeV ion bombardment in combination with time-of-flight (TOF) mass analysis. The spectra recorded in the mass range 0-100 u are dominated by surface impurities, notably hydrocarbons and silicon polyanions incorporating H and OH entities. The characteristic (fragmentation) patterns are quite different for light and high-velocity ion impact. In high-velocity TOF-SIMS analysis of P-doped layers, prepared by chemical vapour deposition (CVD), the mass lines at 63 and 79 u are very prominent and appear to correlate with the phosphorus concentration (PO 2 and PO 3 , respectively). It is shown, however, that for unambiguous P analysis one has to use dynamic SIMS or high mass resolution. (author) 11 refs., 5 figs

  6. A gas ionisation Direct-STIM detector for MeV ion microscopy

    International Nuclear Information System (INIS)

    Norarat, Rattanaporn; Guibert, Edouard; Jeanneret, Patrick; Dellea, Mario; Jenni, Josef; Roux, Adrien; Stoppini, Luc; Whitlow, Harry J.

    2015-01-01

    Direct-Scanning Transmission Ion Microscopy (Direct-STIM) is a powerful technique that yields structural information in sub-cellular whole cell imaging. Usually, a Si p-i-n diode is used in Direct-STIM measurements as a detector. In order to overcome the detrimental effects of radiation damage which appears as a broadening in the energy resolution, we have developed a gas ionisation detector for use with a focused ion beam. The design is based on the ETH Frisch grid-less off-axis Geiger–Müller geometry. It is developed for use in a MeV ion microscope with a standard Oxford Microbeams triplet lens and scanning system. The design has a large available solid angle for other detectors (e.g. proton induced fluorescence). Here we report the performance for imaging ReNcells VM with μm resolution where energy resolutions of <24 keV fwhm could be achieved for 1 MeV protons using isobutane gas

  7. Ion-irradiation-induced microstructural modifications in ferritic/martensitic steel T91

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xiang; Miao, Yinbin; Li, Meimei; Kirk, Marquis A.; Maloy, Stuart A.; Stubbins, James F.

    2017-07-01

    In this paper, in situ transmission electron microscopy investigations were carried out to study the microstructural evolution of ferritic/martensitic steel T91 under 1 MeV Krypton ion irradiation up to 4.2 x 10(15) ions/cm(2) at 573 K, 673 K, and 773 K. At 573 K, grown-in defects are strongly modified by black dot loops, and dislocation networks together with black-dot loops were observed after irradiation. At 673 K and 773 K, grown-in defects are only partially modified by dislocation loops; isolated loops and dislocation segments were commonly found after irradiation. Post irradiation examination indicates that at 4.2 x 1015 ions/cm(2), about 51% of the loops were a(0)/2 < 111 > type for the 673 K irradiation, and the dominant loop type was a(0)< 100 > for the 773 K irradiation. Finally, a dispersed barrier hardening model was employed to estimate the change in yield strength, and the calculated ion data were found to follow the similar trend as the existing neutron data with an offset of 100-150 MPa. (C) 2017 Elsevier B.V. All rights reserved.

  8. Effects of ion beam irradiation on adventitious shoot regeneration from in vitro leaf explants of Septennial ionahta

    International Nuclear Information System (INIS)

    Zhou, L.B.; Li, W.J.; Ma, S.; Dong, X.C.; Yu, L.X.; Li, Q.; Zhou, G.M.; Gao, Q.X.

    2006-01-01

    The effects of 960 MeV carbon ion beam and 8 MeV X-ray irradiation on adventitious shoots from in vitro leaf explants of two different Saintpaulia ionahta (Mauve and Indikon) cultivars were studied with regard to tissue increase, shoots differentiation and morphology changes in the shoots. The experimental results showed that the survival fraction of shoot formation for the Mauve and Indikon irradiated with the carbon ion beam at 20 Gy were 0.715 and 0.600, respectively, while those for both the cultivars exposed to the X-ray irradiation at the same dose were 1.000. Relative biological effectiveness (RBE) of Mauve with respect to X-ray was about two. Secondly, the percentage of regenerating explants with malformed shoots in all Mauve regenerating explants irradiated with carbon ion beam at 20 Gy accounted for 49.6%, while that irradiated with the same dose of X-ray irradiation was only 4.7%; as for Saintpaulia ionahta Indikon irradiated with 20 Gy carbon ion beam, the percentage was 43.3%, which was higher than that of X-ray irradiation. Last, many chlorophyll deficient and other varieties of mutants were obtained in this study. Based on the results above, it can be concluded that the effect of mutation induction by carbon ion beam irradiation on the leaf explants of Saintpaulia ionahta is better than that by X-ray irradiation; and the optimal mutagenic dose varies from 20 Gy to 25 Gy for carbon ion beam irradiation

  9. Applications of focused MeV light ion beams for high resolution channeling contrast imaging

    Energy Technology Data Exchange (ETDEWEB)

    Jamieson, D N; Breese, M B.H.; Prawer, S; Dooley, S P; Allen, M G; Bettiol, A A; Saint, A [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Ryan, C G [Commonwealth Scientific and Industrial Research Organisation (CSIRO), North Ryde, NSW (Australia). Div. of Exploration Geoscience

    1994-12-31

    The technique of Nuclear Microscopy, utilizing a focused ion probe of typically MeV H{sup +} or He{sup +} ions, can produce images where the contrast depends on typical Ion Beam Analysis (lBA) processes. The probe forming lens system usually utilizes strong focusing, precision magnetic quadrupole lenses and the probe is scanned over the target to produce images. Originally, this imaging technique was developed to utilize backscattered particles with incident beam currents typically of a few nA, and the technique became known as Channeling Contrast Microscopy (CCM). Recently, the technique has been developed further to utilize the forward scattering of ions incident along a major crystal axis in thin crystals. This technique is known as Channeling Scanning Transmission Ion Microscopy (CSTIM). Since nearly all incident ions are detected, CSTIM is highly efficient and very low beam currents are sufficient for imaging, typically as low as a few fA. This allows probes as small as 50 nm to be used. In this paper we briefly review the recent applications of these emerging techniques to a variety of single crystal materials (authors). 13 refs., 5 figs.

  10. Applications of focused MeV light ion beams for high resolution channeling contrast imaging

    Energy Technology Data Exchange (ETDEWEB)

    Jamieson, D.N.; Breese, M.B.H.; Prawer, S.; Dooley, S.P.; Allen, M.G.; Bettiol, A.A.; Saint, A. [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Ryan, C.G. [Commonwealth Scientific and Industrial Research Organisation (CSIRO), North Ryde, NSW (Australia). Div. of Exploration Geoscience

    1993-12-31

    The technique of Nuclear Microscopy, utilizing a focused ion probe of typically MeV H{sup +} or He{sup +} ions, can produce images where the contrast depends on typical Ion Beam Analysis (lBA) processes. The probe forming lens system usually utilizes strong focusing, precision magnetic quadrupole lenses and the probe is scanned over the target to produce images. Originally, this imaging technique was developed to utilize backscattered particles with incident beam currents typically of a few nA, and the technique became known as Channeling Contrast Microscopy (CCM). Recently, the technique has been developed further to utilize the forward scattering of ions incident along a major crystal axis in thin crystals. This technique is known as Channeling Scanning Transmission Ion Microscopy (CSTIM). Since nearly all incident ions are detected, CSTIM is highly efficient and very low beam currents are sufficient for imaging, typically as low as a few fA. This allows probes as small as 50 nm to be used. In this paper we briefly review the recent applications of these emerging techniques to a variety of single crystal materials (authors). 13 refs., 5 figs.

  11. Effect of 50 MeV Li3+ irradiation on structural and electrical properties of Mn-doped ZnO

    International Nuclear Information System (INIS)

    Neogi, S K; Chattopadhyay, S; Banerjee, Aritra; Bandyopadhyay, S; Sarkar, A; Kumar, Ravi

    2011-01-01

    The present work aims to study the effect of ion irradiation on structural and electrical properties and their correlation with the defects in the Zn 1-x Mn x O-type system. Zn 1-x Mn x O (x = 0.02, 0.04) samples have been synthesized by the solid-state reaction method and have been irradiated with 50 MeV Li 3+ ions. The concomitant changes have been probed by x-ray diffraction (XRD), temperature-dependent electrical resistivity and positron annihilation lifetime (PAL) spectroscopy. The XRD result shows a single-phase wurtzite structure for Zn 0.98 Mn 0.02 O, whereas for the Zn 0.96 Mn 0.04 O sample an impurity phase has been found, apart from the usual peaks of ZnO. Ion irradiation removes this impurity peak. The grain size of the samples is found to be uniform. For Zn 0.98 Mn 0.02 O, the observed sharp decrease in room temperature resistivity (ρ RT ) with irradiation is consistent with the lowering of the full width at half maximum of the XRD peaks. However, for Zn 0.96 Mn 0.04 O, ρ RT decreases for the initial fluence but increases for a further increase in fluence. All the irradiated Zn 0.98 Mn 0.02 O samples show a metal-semiconductor transition in temperature-dependent resistivity measurements at low temperature. But all the irradiated Zn 0.96 Mn 0.04 O samples show a semiconducting nature in the whole range of temperatures. Results of room temperature resistivity, XRD and PAL measurements are consistent with each other.

  12. Effect of 50 MeV Li{sup 3+} irradiation on structural and electrical properties of Mn-doped ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Neogi, S K; Chattopadhyay, S; Banerjee, Aritra; Bandyopadhyay, S [Department of Physics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700009, West Bengal (India); Sarkar, A [Department of Physics, Bangabasi Morning College, 19 Rajkumar Chakraborty Sarani, Kolkata 700009, West Bengal (India); Kumar, Ravi, E-mail: arbphy@caluniv.ac.in [Department of Material Science and Engineering, NIT, Hamirpur-177005, Himachal Pradesh (India)

    2011-05-25

    The present work aims to study the effect of ion irradiation on structural and electrical properties and their correlation with the defects in the Zn{sub 1-x}Mn{sub x}O-type system. Zn{sub 1-x}Mn{sub x}O (x = 0.02, 0.04) samples have been synthesized by the solid-state reaction method and have been irradiated with 50 MeV Li{sup 3+} ions. The concomitant changes have been probed by x-ray diffraction (XRD), temperature-dependent electrical resistivity and positron annihilation lifetime (PAL) spectroscopy. The XRD result shows a single-phase wurtzite structure for Zn{sub 0.98}Mn{sub 0.02}O, whereas for the Zn{sub 0.96}Mn{sub 0.04}O sample an impurity phase has been found, apart from the usual peaks of ZnO. Ion irradiation removes this impurity peak. The grain size of the samples is found to be uniform. For Zn{sub 0.98}Mn{sub 0.02}O, the observed sharp decrease in room temperature resistivity ({rho}{sub RT}) with irradiation is consistent with the lowering of the full width at half maximum of the XRD peaks. However, for Zn{sub 0.96}Mn{sub 0.04}O, {rho}{sub RT} decreases for the initial fluence but increases for a further increase in fluence. All the irradiated Zn{sub 0.98}Mn{sub 0.02}O samples show a metal-semiconductor transition in temperature-dependent resistivity measurements at low temperature. But all the irradiated Zn{sub 0.96}Mn{sub 0.04}O samples show a semiconducting nature in the whole range of temperatures. Results of room temperature resistivity, XRD and PAL measurements are consistent with each other.

  13. Effect of 50 MeV Li3 + irradiation on structural and electrical properties of Mn-doped ZnO

    Science.gov (United States)

    Neogi, S. K.; Chattopadhyay, S.; Banerjee, Aritra; Bandyopadhyay, S.; Sarkar, A.; Kumar, Ravi

    2011-05-01

    The present work aims to study the effect of ion irradiation on structural and electrical properties and their correlation with the defects in the Zn1 - xMnxO-type system. Zn1 - xMnxO (x = 0.02, 0.04) samples have been synthesized by the solid-state reaction method and have been irradiated with 50 MeV Li3 + ions. The concomitant changes have been probed by x-ray diffraction (XRD), temperature-dependent electrical resistivity and positron annihilation lifetime (PAL) spectroscopy. The XRD result shows a single-phase wurtzite structure for Zn0.98Mn0.02O, whereas for the Zn0.96Mn0.04O sample an impurity phase has been found, apart from the usual peaks of ZnO. Ion irradiation removes this impurity peak. The grain size of the samples is found to be uniform. For Zn0.98Mn0.02O, the observed sharp decrease in room temperature resistivity (ρRT) with irradiation is consistent with the lowering of the full width at half maximum of the XRD peaks. However, for Zn0.96Mn0.04O, ρRT decreases for the initial fluence but increases for a further increase in fluence. All the irradiated Zn0.98Mn0.02O samples show a metal-semiconductor transition in temperature-dependent resistivity measurements at low temperature. But all the irradiated Zn0.96Mn0.04O samples show a semiconducting nature in the whole range of temperatures. Results of room temperature resistivity, XRD and PAL measurements are consistent with each other.

  14. Void formation in cold-worked type 316 stainless steel irradiated with 1-MeV protons

    International Nuclear Information System (INIS)

    Keefer, D.W.; Pard, A.G.

    1974-01-01

    Cold-worked Type 316 stainless steel was irradiated at 500 and 600 0 C with 1-MeV protons. The dependence of void formation on displacement damage, irradiation temperature, and microstructure was studied by transmission electron microscopy. Cold working delays the onset of swelling and reduces it, via a reduction in void size, at both irradiation temperatures. Inhomogeneity in the cold-worked microstructure leads to inhomogeneity in the disposition of voids. Swelling at 600 is greater than at 500 0 C; the voids are less numerous but larger at the higher temperature. No change in the cold-worked microstructure can be detected by transmission electron microscopy after 500 0 C irradiation to 23 displacements per atom. Irradiation to a comparable damage level at 600 0 C results in almost complete elimination of the cold-worked microstructure. Comparison of the results is made with data from reactor irradiation experiments

  15. The real potential continuous ambiguity for 90 MeV Li ions

    International Nuclear Information System (INIS)

    Cook, J.; Barnwell, J.M.; Clarke, N.M.; Griffiths, R.J.

    1980-01-01

    The features of discrete and continuous ambiguities in the real phenomenological optical potential are clarified. The continuous ambiguity in the real potential for the scattering of 90 MeV 6 Li and 7 Li ions from 27 Al is investigated. For 6 Li the ambiguity is of Igo (Phys. Rev. Lett.; 1: 72 (1958) and Phys. Rev.; 115: 1665 (1959)) type but for 7 Li it is of Vrsup(n) = constant type. The implications of this are that 7 Li is less strongly absorbed than 6 Li. (author)

  16. Backscattering/transmission of 2 MeV He{sup ++} ions quantitative correlation study

    Energy Technology Data Exchange (ETDEWEB)

    Berec, V., E-mail: bervesn@gmail.com [Institute of Nuclear Sciences Vinca, University of Belgrade, P.O. Box 522, 11001 Belgrade (Serbia); Germogli, G.; Mazzolari, A.; Guidi, V. [INFN Sezione di Ferrara and Dipartimento di Fisica e Scienze della Terra, Via Saragat 1, 44100 Ferrara (Italy); De Salvador, D. [Dipartimento di Fisica, Università di Padova, Via Marzolo n.8, 35131 Padova (Italy); INFN Laboratori Nazionali di Legnaro, Viale Università 2, 35020 Legnaro, PD (Italy); Bacci, L. [INFN Laboratori Nazionali di Legnaro, Viale Università 2, 35020 Legnaro, PD (Italy)

    2015-07-15

    In this work we report on detailed findings of planar channeling oscillations of 2 MeV He{sup ++} particles in (1 1 0) silicon crystal. The exact correlation and coherence mechanism between confined particles oscillating trajectories are analyzed theoretically and experimentally in backscattering/transmission geometry. Regular patterns of channeled He{sup ++} ion planar oscillations are shown to be dominated by the crystal harmonic-oscillator potential and multiple scattering effect. For the first time it was shown that under the planar channeling conditions trajectories of positively charged particles exhibit observable correlation dynamics, including the interference effect. Quantitative estimation of channeling efficiency is performed using path integral method.

  17. Modification of graphene by ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Bukowska, Hanna; Akcoeltekin, Sevilay; El Kharrazi, Mourad; Schleberger, Marika [Universitaet Duisburg-Essen, Fakultaet fuer Physik, Duisburg (Germany); Osmani, Orkhan [Universitaet Duisburg-Essen, Fakultaet fuer Physik, Duisburg (Germany); Technische Universitaet Kaiserslautern, Fachbereich Physik, Gottlieb-Daimler-Strasse, Gebaeude 47, 67663 Kaiserslautern (Germany)

    2010-07-01

    Ion irradiation can be used to modify surfaces on the nanometer scale. We investigate graphene on different insulator (SrTiO{sub 3}, TiO{sub 2}, and Al{sub 2}O{sub 3}) and semiconductor (SiO{sub 2}) substrates. The bombardment of those target surfaces with swift heavy ions under grazing angle of incidence creates chains of nanodots on the substrate and folds graphene to typical origami-like structures. The shape of the folded graphene seems to depend on the length of the tracks. The length can be controlled by the angle of incidence. From the analysis of atomic force microscopy measurements, we classify the different types of modifications, with the aim to determine the relationship between chain length and origami shape. Further more we want to develop a theoretical understanding of the physical processes leading to the folding.

  18. Measurement of energy deposition distributions produced in cylindrical geometry by irradiation with 15 MeV neutrons

    International Nuclear Information System (INIS)

    Brandan, M.E.

    1979-01-01

    Cellular survival experiments have shown that the biological damage induced by radiation depends on the density of energy deposition along the trajectory of the ionizing particle. The quantity L is defined to measure the density of energy transfer along a charged particle's trajectory. It is equal to sigma/l, where sigma is the energy transferred to a medium and l is the path length along which the transfer takes place. L is the stochastic quantity whose mean value is the unrestricted linear energy transfer, L/sub infinity/. Measurements of the distribution of L in a thin medium by secondary charged particles from fast neutron irradiation were undertaken. A counter operating under time coincidence between two coaxial cylindrical detectors was designed and built for this purpose. Secondary charged particles enter a gas proportional counter and deposit some energy sigma. Those particles traversing the chamber along a radial trajectory strike a CsI scintillator. A coincidence between both detectors' signals selects a known path length for these events, namely the radius of the cavity. Measurements of L distributions for l = 1 μm in tissue were obtained for 3 and 15 MeV neutron irradiation of a tissue-equivalent target wall and for 15 MeV neutron irradiation of a graphite wall. Photon events were corrected for by measurements with a Pb target wall and 15 MeV neutron irradiation as well as exposure to a pure photon field. The measured TE wall distributions with 15 MeV neutron bombardment show contributions from protons, α-particles, 9 Be and 12 C recoils. The last three comprise the L distribution for irradiation of the graphite wall. The proton component of the measured L distributions at 3 and 15 MeV was compared to calculated LET distributions

  19. Diffusion of alpha-like MeV ions in TFTR

    International Nuclear Information System (INIS)

    Boivin, R.L.; Zweben, S.J.; Chang, C.S.; Hammett, G.; Mynick, H.E.; White, R.B.

    1991-01-01

    Single particle confinement of alpha particles is of crucial importance in reactor-grade tokamaks like BPX and ITER. Besides the well-known process of first-orbit losses, mechanisms that could lead to significant loss of alpha particles are turbulence-induced diffusion and toroidal field ripple stochastic diffusion. These two mechanisms have been separately studied in TFTR using two different detectors (one at the bottom of the machine and the other near the outer midplane) which can detect escaping charged fusion products, namely the 1 MeV triton and the 3 MeV proton in D-D plasmas (and also the 3.5 MeV alpha in D-T). The main difficulty in this type of experiment lies in the necessity of distinguishing the diffusion process from the always-present first-orbit loss-process. In this paper, we show how these two processes can be distinguished using the pitch-angle discrimination of the detectors. The pitch-angle is defined here as the angle of the particle trajectory with respect to the toroidal direction and so is a measure of the ion magnetic moment, μ. Results obtained at the midplane would be the first reported evidence of TF ripple diffusion in a tokamak. (author) 3 refs., 2 figs

  20. Thermo-luminescence and photoluminescence studies of Al2O3 irradiated with heavy ions

    International Nuclear Information System (INIS)

    Jheeta, K.S.

    2008-06-01

    Thermo-luminescence (TL) spectra of single crystals of Al 2 O 3 (sapphire) irradiated with 200 MeV swift Ag ions at different fluence in the range 1x10 11 to 1x10 13 ions/cm 2 has been recorded at room temperature by keeping the warming rate 2K/min. The TL glow curve of the irradiated samples has a simple structure with a prominent peak at ∼ 500 K with one small peak at 650 K. The intensity of main peak increases with the ion fluence. This has been attributed to the creation of new traps on irradiation. Also, a shift of 8 K in the peak position towards low temperature side has been observed at higher fluence 1x10 13 ions/cm 2 . In addition, photoluminescence (PL) spectra of irradiated samples have been recorded at room temperature upon 2.8 eV excitation. A broad band consisting of mainly two emission bands, respectively at 2.5 and 2.3 eV corresponding to F 2 and F 2 2+ defect centers is observed. The intensity of these bands shows an increasing trend up to fluence 5x10 12 ions/cm 2 and then decreases at higher fluence 1x10 13 ions/cm 2 . The results are interpreted in terms of creation of newly defect centers, clustering/aggregation and radiation-induced annihilation of defects. (author)

  1. Design study of prototype accelerator and MeV test facility for demonstration of 1 MeV, 1 A negative ion beam production

    International Nuclear Information System (INIS)

    Inoue, Takashi; Hanada, Masaya; Miyamoto, Kenji; Ohara, Yoshihiro; Okumura, Yoshikazu; Watanabe, Kazuhiro; Maeno, Shuichi.

    1994-08-01

    In fusion reactors such as ITER, a neutral beam injector of MeV class beam energy and several tens MW class power is required as one of candidates of heating and current drive systems. However, the beam energy of existing high power accelerators are one order of magnitude lower than the required value. In order to realize a neutral beam injector for the fusion reactor, 'Proof-of-Principle' of such high energy acceleration is a critical issue at a reactor relevant beam current and pulse length. An accelerator and an accelerator facility which are necessary to demonstrate the Proof-of-Principle acceleration of negative ion beams up to 1 MeV, have been designed in the present study. The accelerator is composed of a cesium-volume type ion source and a multi-stage electrostatic acceleration system [Prototype Accelerator]. A negative hydrogen ion beam with the current of about one ampere (1 A) can be accelerated up to 1 MeV at a low operating pressure. Two types of acceleration system, a multi-multi type and a multi-single type, have been studied. The test facility has sufficient capability for the test of the Prototype Accelerator [MeV Test Facility]. The dc high voltage generator for negative ion acceleration is a Cockcroft-Walton type and capable of delivering 1 A at 1 MV (=1 MW) for 60 s. High voltage components including Prototype Accelerator are installed in a SF 6 vessel pressurized at 6 kg/cm 2 to overcome high voltage gradients. The vessel and the beamline are installed in a X-ray shield. (author)

  2. Low-energy irradiation effects of gas cluster ion beams

    International Nuclear Information System (INIS)

    Houzumi, Shingo; Takeshima, Keigo; Mochiji, Kozo; Toyoda, Noriaki; Yamada, Isao

    2007-01-01

    A cluster-ion irradiation system with cluster-size selection has been developed to study the effects of the cluster size for surface processes using cluster ions. A permanent magnet with a magnetic field of 1.2 T is installed for size separation of large cluster ions. Trace formations at HOPG surface by the irradiation with size-selected Ar-cluster ions under acceleration energy of 30 keV were investigated by a scanning tunneling microscopy. Generation behavior of the crater-like traces is strongly affected by the number of constituent atoms (cluster size) of the irradiating cluster ion. When the incident cluster ion is composed of 100-3000 atoms, crater-like traces are observed on the irradiated surfaces. In contrast, such traces are not observed at all with the irradiation of the cluster-ions composed of over 5000 atoms. Such the behavior is discussed on the basis of the kinetic energy per constituent atom of the cluster ion. To study GCIB irradiation effects against macromolecule, GCIB was irradiated on DNA molecules absorbed on graphite surface. By the GCIB irradiation, much more DNA molecules was sputtered away as compared with the monomer-ion irradiation. (author)

  3. Exposure times and ratio of readings produced by irradiation of thermoluminescence dosemeters in PTB neutron standard fields between 0.1 MeV and 19 MeV

    International Nuclear Information System (INIS)

    Jahr, R.; Guldbakke, S.; Cosack, M.

    1979-06-01

    6 LiF and 7 LiF thermoluminescence dosimeters (TLD) irradiated in a standard field of monoenergetic neutrons (Esub(n) = 0.1 MeV to 19 MeV), respond as well to the photon as to the neutron component of this radiation field. The ratio of the two TLD readings as well as the duration of irradiation required to obtain a preset TLD reading are calculated as a function of the neutron energy. (orig.) [de

  4. Studies of defects on ion irradiated diamond

    Energy Technology Data Exchange (ETDEWEB)

    Lai, P F; Prawer, S; Spargo, A E.C.; Bursill, L A [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    It is known that diamond is amorphized or graphitized when irradiated above a critical dose. Above this critical dose, D{sub c}, the resistance R is found to drop very rapidly due to the formation of graphite regions which overlap at D{sub c} to form a semi-continuous electrically conducting pathway through the sample. One particularly interesting method of studying this transformation is electron energy-loss spectroscopy (EELS). Using EELS, the different phases of carbon can be identified and distinguished from each other using the extended energy-loss fine structure (EXELFS) of the core-loss part of the spectrum. EELS is a sensitive method for determining the electronic structure of small areas of a sample. In this paper, transmission electron microscopy (TEM) and EELS measurements of the ion irradiated diamond were combined in an attempt to correlate the microstructural nature of the ion-beam induced damage to the changes in the electrical and other properties. 7 refs., 1 tab., 2 figs.

  5. Studies of defects on ion irradiated diamond

    Energy Technology Data Exchange (ETDEWEB)

    Lai, P.F.; Prawer, S.; Spargo, A.E.C.; Bursill, L.A. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    It is known that diamond is amorphized or graphitized when irradiated above a critical dose. Above this critical dose, D{sub c}, the resistance R is found to drop very rapidly due to the formation of graphite regions which overlap at D{sub c} to form a semi-continuous electrically conducting pathway through the sample. One particularly interesting method of studying this transformation is electron energy-loss spectroscopy (EELS). Using EELS, the different phases of carbon can be identified and distinguished from each other using the extended energy-loss fine structure (EXELFS) of the core-loss part of the spectrum. EELS is a sensitive method for determining the electronic structure of small areas of a sample. In this paper, transmission electron microscopy (TEM) and EELS measurements of the ion irradiated diamond were combined in an attempt to correlate the microstructural nature of the ion-beam induced damage to the changes in the electrical and other properties. 7 refs., 1 tab., 2 figs.

  6. RBS cross-section of MeV ions channeling in crystals from quantum theory

    International Nuclear Information System (INIS)

    Den Besten, J.L.; Jamieson, D.N.; Spizzirri, P.G.; Allen, L.J.

    1999-01-01

    We present an alternative approach to describing Rutherford Backscattered (RBS) angular yield scans. The Bloch wave method to formulate the cross-section is a fundamental approach originating from Schrodinger's equation. This quantum formulation is often used when describing various aspects of electron diffraction including Backscattering, EDX and TEM but has seen little application to the very short wavelength regime of MeV ions. It offers several significant advantages. Great freedom is given to crystal properties and structure in the theory allowing a fundamental insight into the channeling phenomena and hence the crystal itself. We have calculated both planar and axial channeling scans and these maps are shown to be in good agreement to their experimental counterparts. There is excellent correlation between the theoretical and experimental results for both χ min and Ψ 1/2 . Further investigation is required into the area of absorption or dechanneling. This phenomenon requires different mechanisms for electron and ion scattering differ greatly

  7. Radiation tolerance of nanostructured ZrN coatings against swift heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Janse van Vuuren, A., E-mail: arnojvv@gmail.com [Centre for HRTEM, Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Skuratov, V.A. [Flerov Laboratory for Nuclear Reactions, Joint Institute for Nuclear Research, Dubna (Russian Federation); Uglov, V.V. [Department of Solid State Physics, Physics Faculty Belarusian State University, Minsk (Belarus); Neethling, J.H. [Centre for HRTEM, Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Zlotski, S.V. [Department of Solid State Physics, Physics Faculty Belarusian State University, Minsk (Belarus)

    2013-11-15

    Nano-structured zirconium nitride layers – on Si substrates – of various thicknesses (0.1, 3, 10 and 20 μm) were irradiated with 167 MeV Xe, 250 MeV Kr and 695 MeV Bi ions to fluences in the range from 3 × 10{sup 12} to 2.6 × 10{sup 15} cm{sup −2} for Xe, 1 × 10{sup 13} to 7.06 × 10{sup 13} cm{sup −2} for Kr and 10{sup 12} to 10{sup 13} cm{sup −2} for Bi. The purpose of these irradiation experiments is to simulate the effects of fission fragment bombardment on nanocrystalline ZrN. The irradiated layers where subsequently analysed by X-ray diffraction (XRD), transmission electron microscopy (TEM) and nano-indentation hardness testing (NIH) techniques. XRD, TEM and NIH results indicate that ZrN has a very high tolerance to the effects of high energy irradiation.

  8. RBE of cells irradiated by carbon ions

    International Nuclear Information System (INIS)

    Li Wenjian; Zhou Guangming; Wei Zengquan; Wang Jufang; Dang Bingrong; Li Qiang; Xie Hongmei

    2002-01-01

    The mouse melanoma cells (B16), human cervical squamous carcinoma cells (HeLa), Chinese hamster pulmonary cells V79, and human hepatoma cells (SMMC-7721) were collected for studying. The cells of 5 x 10 5 /ml were seeded in 35 mm diameter petri dish and allowed to grow one day, and then the medium in petri dishes was removed away, the cells were washed once with phosphate-buffered saline (PBS), petri dishes was covered with 4μm thickness Mylar film. The cells were irradiated by 12 C ion beam with LETs of 125.5, 200, 700 keV/μm in water generated from HIRFL (Heavy Ion Research Facility in Lanzhou). For 60 Co γ-ray experiment, the cells of 5 x 10 4 /ml were grown in 20 ml culture flasks including 1.5 ml cell suspension and directly used for irradiation. Following irradiation, the cells were trypsinized, counted, plated at appropriate densities in growth medium and then seeded in 60 mm diameter culture dishes. Each dish was filled 4 ml standard medium, and incubated for 8-12 days at 37 degree C incubator containing 5% CO 2 . The cultures were then rinsed with PBS buffer at pH 6.8, fixed with Carnoy's fluid, stained for 8 min with Giemsa (1:20, pH 6.8), and colonies containing more than 50 cells were scored. Their relative biological effectivenesses (RBE) were investigated. The results show that RBE depends on cellular types and increases with increasing of cellular survival level when LET is at 125.5 keV/μm, and decreases with increasing LET when LET ≥ 125.5 keV/μm

  9. Modification of structure and optical band-gap of nc-Si:H films with ion irradiation

    International Nuclear Information System (INIS)

    Zhu Yabin; Wang Zhiguang; Sun Jianrong; Yao Cunfeng; Shen Tielong; Li Bingsheng; Wei Kongfang; Pang Lilong; Sheng Yanbin; Cui Minghuan; Li Yuanfei; Wang Ji; Zhu Huiping

    2012-01-01

    Hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated by using hot-wire chemical vapor deposition are irradiated at room temperature with 6.0 MeV Xe-ions. The irradiation fluences are 1.0 × 10 13 , 5.0 × 10 13 and 1.0 × 10 14 Xe-ions/cm 2 . The structure and optical band-gap of the irradiated films varying with ion fluence are investigated by means of X-ray diffraction, Raman and UV–Vis–NIR spectroscopes, as well as transmission electron microscopy. It is found that the crystallite size, the crystalline fraction and the optical band-gap decrease continuously with increasing the ion fluence. The crystalline fraction of the films irradiated to the fluences from 0 to 1.0 × 10 14 Xe-ions/cm 2 decreases from about 65.7% to 2.9% and the optical band-gap decreases from about 2.1 to 1.6 eV. Possible origins of the modification of the nc-Si:H films under 6.0 MeV Xe-ions irradiation are briefly discussed.

  10. Swift heavy ion irradiated SnO_2 thin film sensor for efficient detection of SO_2 gas

    International Nuclear Information System (INIS)

    Tyagi, Punit; Sharma, Savita; Tomar, Monika; Singh, Fouran; Gupta, Vinay

    2016-01-01

    Highlights: • Response of Ni"7"+ ion irradiated (100 MeV) SnO_2 film have been performed. • Effect of irradiation on the structural and optical properties of SnO_2 film is studied. • A decrease in operating temperature and increased response is seen after irradiation. - Abstract: Gas sensing response studies of the Ni"7"+ ion irradiated (100 MeV) and non-irradiated SnO_2 thin film sensor prepared under same conditions have been performed towards SO_2 gas (500 ppm). The effect of irradiation on the structural, surface morphological, optical and gas sensing properties of SnO_2 thin film based sensor have been studied. A significant decrease in operating temperature (from 220 °C to 60 °C) and increased sensing response (from 1.3 to 5.0) is observed for the sample after irradiation. The enhanced sensing response obtained for the irradiated SnO_2 thin film based sensor is attributed to the desired modification in the surface morphology and material properties of SnO_2 thin film by Ni"7"+ ions.

  11. Separation and recovery of dioxins using a heavy ion irradiation film

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, S; Iida, S; Ohbayashi, Y [Meiji Univ., Kawasaki, Kanagawa (Japan). Faculty of Engineering

    2004-02-01

    It is demonstrated that halogenated dioxin and its derivatives can be separated from polluted aqueous solutions using pervaporation technique with a nanopore membrane fabricated by heavy-ion beam irradiation. The concentration of dioxin in the sample solution was set below 1 ppm. Polyethyleneterphthalate membrane was used. The membrane was first irradiated with high energy Xe-ions of 450 MeV with a fluence of 3 x 10{sup 3} to 3 x 10{sup 9} ions/cm{sup 2} using TIARA facility of JAERI Takasaki, etched with 6 mol/l NaOH solution resulting in formation of pores with diameter ranging from several to 40 nm, followed by grafting with monomers having affinity to dioxin. Dibenzo-p-dioxin was used to obtain permeability data. Separation factor obtained were within the range from 10 to 50. (S. Ohno)

  12. Investigation of Au9+ swift heavy ion irradiation on CdS/CuInSe2 thin films

    International Nuclear Information System (INIS)

    Joshi, Rajesh A.; Taur, Vidya S.; Singh, Fouran; Sharma, Ramphal

    2013-01-01

    In the present manuscript we report about the preparation of CdS/CuInSe 2 heterojunction thin films by chemical ion exchange method and investigation of 120 MeV Au 9+ swift heavy ions (SHI) irradiation effect on its physicochemical as well as optoelectronic properties. These pristine (as grown) samples are irradiated with 120 MeV Au 9+ SHI of 5×10 11 and 5×10 12 ions/cm 2 fluencies and later on characterized for structural, compositional, morphological, optical and I–V characteristics. X-ray diffraction (XRD) pattern obtained from pristine and irradiated films shows considerable modifications in peak intensity as well as rising of some new peaks, corresponding to In 2 Se 3 , Cu 3 Se 2 and CuIn 2 Se 3 materials. Transmission electron microscope (TEM) images show decrease in grain size upon increase in irradiation ion fluencies, which is also supported from the observation of random and uneven distribution of nano-grains as confirmed through scanning electron microscope (SEM) images. Presence of Cd, Cu, In, S and Se in energy dispersive X-ray spectrum analysis (EDAX) confirms the expected and observed elemental composition in thin films, the absorbance peaks are related to band to band transitions and spin orbit splitting while energy band gap is observed to increase from 1.36 for pristine to 1.53 eV for SHI irradiated thin films and I–V characteristics under illumination to 100 mW/cm 2 light source shows enhancement in conversion efficiency from 0.26 to 1.59% upon irradiation. - Highlights: • Nanostructured CdS/CuInSe 2 can be grown by chemical ion exchange method. • Physicochemical and optoelectronic properties can be modified by 120 MeV Au 9+ SHI Irradiation. • Solar energy conversion efficiency improved from 0.26 to 1.59% in CdS/CuInSe 2 upon irradiation

  13. RAPD analysis of mutants obtained by ion beam irradiation to hinoki cypress shoot primordia

    International Nuclear Information System (INIS)

    Ishii, K.; Yamada, Y.; Hase, Y.; Shikazono, N.; Tanaka, A.

    2003-01-01

    Mutants were induced by irradiation of the shoot primordia of Hinoki cypress with 50 MeV 4 He 2+ heavy ion beam. Fresh shoot primordia on the CD medium in the plastic Petri dish (35 x 10 mm) were irradiated. Xanta mutants were induced from 38 to 266 Gy irradiation. Waxy mutants were induced from 76 to 266 Gy irradiation. Xanta, waxy and control type of regenerated Hinoki cypress in vitro were checked for their DNA level difference using RAPD analysis. Among 81 primers used, 23 primers produced the 68 bands. Among them stable 44 bands produced by 15 primers were compared between mutants and control plant. So far, there is no variation among the RAPD analysis band patterns of those mutants. Bigger test size may detect the gene variation specific for mutants

  14. Enhanced AC conductivity and dielectric relaxation properties of polypyrrole nanoparticles irradiated with Ni12+ swift heavy ions

    International Nuclear Information System (INIS)

    Hazarika, J.; Kumar, A.

    2014-01-01

    In this paper, we report the 160 MeV Ni 12+ swift heavy ions (SHIs) irradiation effects on AC conductivity and dielectric relaxation properties of polypyrrole (PPy) nanoparticles in the frequency range of 42 Hz–5 MHz. Four ion fluences of 5 × 10 10 , 1 × 10 11 , 5 × 10 11 and 1 × 10 12 ions/cm 2 have been used for the irradiation purpose. Transport properties in the pristine and irradiated PPy nanoparticles have been investigated with permittivity and modulus formalisms to study the polarization effects and conductivity relaxation. With increasing ion fluence, the relaxation peak in imaginary modulus (M ″ ) plots shifts toward high frequency suggesting long range motion of the charge carriers. The AC conductivity studies suggest correlated barrier hopping as the dominant transport mechanism. The hopping distance (R ω ) of the charge carriers decreases with increasing the ion fluence. Binding energy (W m ) calculations depict that polarons are the dominant charge carriers

  15. Damage profiles and ion distribution in Pt-irradiated SiC

    Energy Technology Data Exchange (ETDEWEB)

    Xue, H.Z. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Zhang, Y., E-mail: Zhangy1@ornl.gov [Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Zhu, Z. [Pacific Northwest National Laboratory, P.O. Box 999, Richland, WA 99352 (United States); Zhang, W.M. [Department of Radiation Therapy, Peking University First Hospital, Beijing 100034 (China); Bae, I.-T. [Small Scale Systems Integration and Packaging Center, State University of New York at Binghamton, P.O. Box 6000, Binghamton, NY 13902 (United States); Weber, W.J. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

    2012-09-01

    Single crystalline 6H-SiC samples were irradiated at 150 K with 2 MeV Pt ions. The local volume swelling was determined by electron energy loss spectroscopy (EELS), and a nearly sigmoidal dependence on irradiation dose is observed. The disorder profiles and ion distribution were determined by Rutherford backscattering spectrometry (RBS), transmission electron microscopy, and secondary ion mass spectrometry. Since the volume swelling reaches 12% over the damage region at high ion fluence, the effect of lattice expansion is considered and corrected for in the analysis of RBS spectra to obtain depth profiles. Projectile and damage profiles are estimated by SRIM (Stopping and Range of Ions in Matter). When compared with the measured profiles, the SRIM code predictions of ion distribution and the damage profiles are underestimated due to significant overestimation of the electronic stopping power for the slow heavy Pt ions. By utilizing the reciprocity method, which is based on the invariance of the inelastic energy loss in ion-solid collisions against interchange of projectile and target atom, a much lower electronic stopping power is deduced. A simple approach, based on reducing the density of SiC target in SRIM simulation, is proposed to compensate the overestimated SRIM electronic stopping power values, which results in improved agreement between predicted and measured damage profiles and ion ranges.

  16. Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

    Science.gov (United States)

    Jadhav, Vidya

    2015-09-01

    Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0> orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 1017 cm-3 were irradiated at 100 MeV Fe7+ ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 1010-1 × 1014 ions cm-2. The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet-visible-NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 1013, 5 × 1013 and 1 × 1014 ions cm-2, we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 1013 ion cm-2 was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E1, E1 + Δ and E2 band gaps in all irradiated samples.

  17. Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

    International Nuclear Information System (INIS)

    Jadhav, Vidya

    2015-01-01

    Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0〉 orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 10 17 cm −3 were irradiated at 100 MeV Fe 7+ ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 10 10 –1 × 10 14 ions cm −2 . The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet–visible–NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 10 13 , 5 × 10 13 and 1 × 10 14 ions cm −2 , we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 10 13 ion cm −2 was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E 1 , E 1 + Δ and E 2 band gaps in all irradiated samples

  18. Hydrogen release from 800 MeV proton-irradiated tungsten

    Science.gov (United States)

    Oliver, B. M.; Venhaus, T. J.; Causey, R. A.; Garner, F. A.; Maloy, S. A.

    2002-12-01

    Tungsten irradiated in spallation neutron sources, such as those proposed for the accelerator production of tritium (APT) project, will contain large quantities of generated helium and hydrogen gas. Tungsten used in proposed fusion reactors will also be exposed to neutrons, and the generated protium will be accompanied by deuterium and tritium diffusing in from the plasma-facing surface. The release kinetics of these gases during various off-normal scenarios involving loss of coolant and after heat-induced rises in temperature are of particular interest for both applications. To determine the release kinetics of hydrogen from tungsten, tungsten rods irradiated with 800 MeV protons in the Los Alamos Neutron Science Center (LANSCE) to high exposures as part of the APT project have been examined. Hydrogen evolution from the tungsten has been measured using a dedicated mass-spectrometer system by subjecting the specimens to an essentially linear temperature ramp from ˜300 to ˜1500 K. Release profiles are compared with predictions obtained using the Tritium Migration Analysis Program (TMAP4). The measurements show that for high proton doses, the majority of the hydrogen is released gradually, starting at about 900 K and reaching a maximum at about 1400 K, where it drops fairly rapidly. Comparisons with TMAP show quite reasonable agreement using a trap energy of 1.4 eV and a trap density of ˜7%. There is a small additional release fraction occurring at ˜550 K, which is believed to be associated with low-energy trapping at or near the surface, and, therefore, was not included in the bulk TMAP model.

  19. Hydrogen Release From 800-MeV Proton-Irradiated Tungsten

    International Nuclear Information System (INIS)

    Oliver, Brian M.; Venhaus, Thomas J.; Causey, Rion A.; Garner, Francis A.; Maloy, Stuart A.

    2002-01-01

    Tungsten irradiated in spallation neutron sources such as those proposed for the Accelerator Production of Tritium (APT) project, or in proposed fusion reactors, will contain large quantities of generated helium and hydrogen gas. In the APT, spallation neutrons would be generated by the interaction of high energy (∼1 GeV) protons with solid tungsten rods or cylinders. In fusion reactors, tungsten used in a tokamak diverter will contain hydrogen, as well as deuterium and tritium diffusing in from the plasma-facing surface. The release kinetics of these gases during various off-normal scenarios involving loss of coolant and afterheat-induced rises in temperature is of particular interest for both applications. To determine the release kinetics of hydrogen from tungsten, tungsten rods irradiated with 800 MeV protons in the Los Alamos Neutron Science Center (LANCE) to high exposures as part of the APT project have been examined. Hydrogen evolution from the tungsten was measured using a dedicated mass spectrometer system by subjecting the specimens to an essentially linear temperature ramp from ∼323 K to ∼1473 K. Release profiles are compared with predictions obtained using the Tritium Migration Analysis Program (TMAP4). Input parameters for the modeling, consisting of diffusivity, recombination rate coefficient, and trapping, are discussed. The measurements show that for high proton doses, the majority of the hydrogen is released gradually, starting at about 900 K and reaching a maximum at about 1400 K, where it drops fairly rapidly. Comparisons with TMAP show reasonable agreement at high proton dose using a trap value of 1.4 eV and a trap density of 3%. There is also a small release fraction occurring at ∼600 K which predominates at lower proton doses, and which is relatively independent of dose. This lower-temperature release is predicted by TMAP if no traps are assumed, suggesting that this release may represent an adsorbed surface component

  20. Hydrogen release from 800 MeV proton-irradiated tungsten

    International Nuclear Information System (INIS)

    Oliver, B.M.; Venhaus, T.J.; Causey, R.A.; Garner, F.A.; Maloy, S.A.

    2002-01-01

    Tungsten irradiated in spallation neutron sources, such as those proposed for the accelerator production of tritium (APT) project, will contain large quantities of generated helium and hydrogen gas. Tungsten used in proposed fusion reactors will also be exposed to neutrons, and the generated protium will be accompanied by deuterium and tritium diffusing in from the plasma-facing surface. The release kinetics of these gases during various off-normal scenarios involving loss of coolant and after heat-induced rises in temperature are of particular interest for both applications. To determine the release kinetics of hydrogen from tungsten, tungsten rods irradiated with 800 MeV protons in the Los Alamos Neutron Science Center (LANSCE) to high exposures as part of the APT project have been examined. Hydrogen evolution from the tungsten has been measured using a dedicated mass-spectrometer system by subjecting the specimens to an essentially linear temperature ramp from ∼300 to ∼1500 K. Release profiles are compared with predictions obtained using the Tritium Migration Analysis Program (TMAP4). The measurements show that for high proton doses, the majority of the hydrogen is released gradually, starting at about 900 K and reaching a maximum at about 1400 K, where it drops fairly rapidly. Comparisons with TMAP show quite reasonable agreement using a trap energy of 1.4 eV and a trap density of ∼7%. There is a small additional release fraction occurring at ∼550 K, which is believed to be associated with low-energy trapping at or near the surface, and, therefore, was not included in the bulk TMAP model

  1. Hydrogen release from 800 MeV proton-irradiated tungsten

    Energy Technology Data Exchange (ETDEWEB)

    Oliver, B.M. E-mail: brian.oliver@pnl.gov; Venhaus, T.J.; Causey, R.A.; Garner, F.A.; Maloy, S.A

    2002-12-01

    Tungsten irradiated in spallation neutron sources, such as those proposed for the accelerator production of tritium (APT) project, will contain large quantities of generated helium and hydrogen gas. Tungsten used in proposed fusion reactors will also be exposed to neutrons, and the generated protium will be accompanied by deuterium and tritium diffusing in from the plasma-facing surface. The release kinetics of these gases during various off-normal scenarios involving loss of coolant and after heat-induced rises in temperature are of particular interest for both applications. To determine the release kinetics of hydrogen from tungsten, tungsten rods irradiated with 800 MeV protons in the Los Alamos Neutron Science Center (LANSCE) to high exposures as part of the APT project have been examined. Hydrogen evolution from the tungsten has been measured using a dedicated mass-spectrometer system by subjecting the specimens to an essentially linear temperature ramp from {approx}300 to {approx}1500 K. Release profiles are compared with predictions obtained using the Tritium Migration Analysis Program (TMAP4). The measurements show that for high proton doses, the majority of the hydrogen is released gradually, starting at about 900 K and reaching a maximum at about 1400 K, where it drops fairly rapidly. Comparisons with TMAP show quite reasonable agreement using a trap energy of 1.4 eV and a trap density of {approx}7%. There is a small additional release fraction occurring at {approx}550 K, which is believed to be associated with low-energy trapping at or near the surface, and, therefore, was not included in the bulk TMAP model.

  2. Mutation effects of C2+ ion irradiation on the greasy Nitzschia sp

    International Nuclear Information System (INIS)

    Yang, Y.N.; Liu, C.L.; Wang, Y.K.; Xue, J.M.

    2013-01-01

    Highlights: • The optimal conditions of C 2+ ion irradiation on Nitzschia sp. were discussed. • Get the “saddle type” survival curve. • One mutant whose lipid content improved significantly was selected. • The C 2+ ion irradiation didn’t change the algae's morphology and growth rate. - Abstract: Screening and nurturing algae with high productivity, high lipid content and strong stress resistance are very important in algae industry. In order to increase the lipid content, the Nitzschia sp. was irradiated with a 3 MeV C 2+ beam. The sample pretreatment method was optimized to obtain the best mutagenic condition and the survival ratio curve. The positive mutants with a significant improvement in lipid content were screened and their C 2+ mutagenic effects were analyzed by comparing the greasiness and growth characteristics with the wild type algae. Results showed that when the Nitzschia sp. was cultivated in nutritious medium containing 10% glycerol solution, and dried on the filter for 5 min after centrifugation, the realization of the microalgae heavy ion mutagenesis could be done. The survival ratio curve caused by C 2+ irradiation was proved to be “saddle-shaped”. A positive mutant was screened among 20 survivals after irradiation, the average lipid content of the mutation increased by 9.8% than the wild type after 4 generations. But the growth rate of the screened mutation didn’t change after the heavy ion implantation compared to the wild type algae

  3. Effect of swift heavy ion irradiation on bare and coated ZnS quantum dots

    International Nuclear Information System (INIS)

    Chowdhury, S.; Hussain, A.M.P.; Ahmed, G.A.; Singh, F.; Avasthi, D.K.; Choudhury, A.

    2008-01-01

    The present study compares structural and optical modifications of bare and silica (SiO 2 ) coated ZnS quantum dots under swift heavy ion (SHI) irradiation. Bare and silica coated ZnS quantum dots were prepared following an inexpensive chemical route using polyvinyl alcohol (PVA) as the dielectric host matrix. X-ray diffraction (XRD) and transmission electron microscopy (TEM) study of the samples show the formation of almost spherical ZnS quantum dots. The UV-Vis absorption spectra reveal blue shift relative to bulk material in absorption energy while photoluminescence (PL) spectra suggests that surface state and near band edge emissions are dominating in case of bare and coated samples, respectively. Swift heavy ion irradiation of the samples was carried out with 160 MeV Ni 12+ ion beam with fluences 10 12 to 10 13 ions/cm 2 . Size enhancement of bare quantum dots after irradiation has been indicated in XRD and TEM analysis of the samples which has also been supported by optical absorption spectra. However similar investigations on irradiated coated quantum dots revealed little change in quantum dot size and emission. The present study thus shows that the coated ZnS quantum dots are stable upon SHI irradiation compared to the bare one

  4. Microstructural evolution of CANDU spacer material Inconel X-750 under in situ ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, He Ken [Department of Mechanical and Materials Engineering, Queen’s University Kingston, Ontario K7L 3N6 (Canada); Yao, Zhongwen, E-mail: yaoz@me.queensu.ca [Department of Mechanical and Materials Engineering, Queen’s University Kingston, Ontario K7L 3N6 (Canada); Judge, Colin; Griffiths, Malcolm [Deformation Technology Branch, AECL, Chalk River Laboratories Chalk River, Ontario K0J 1J0 (Canada)

    2013-11-15

    Highlights: •γ′ Disordered at low dose. •Cascade induced SFTs were observed in alloy X-750. •No cavities were found from mono heavy ions irradiated samples. -- Abstract: Work on Inconel® X-750 spacers removed from CANDU® reactors has shown that they become embrittled and there is development of many small cavities within the metal matrix and along grain boundaries. In order to emulate the neutron irradiation induced microstructural changes, heavy ion irradiations (1 MeV Kr{sup 2+} ions) were performed while observing the damage evolution using an intermediate voltage electron microscope (IVEM) operating at 200 kV. The irradiations were carried out at various temperatures 60–400 °C. The principal strengthening phase, γ′, was disordered at low doses (∼0.06 dpa) during the irradiation. M{sub 23}C{sub 6} carbides were found to be stable up to 5.4 dpa. Lattice defects consisted mostly of stacking fault tetrahedras (SFTs), 1/2<1 1 0> perfect loops and small 1/3<1 1 1> faulted Frank loops. The ratio of SFT number density to loop number density for each irradiation condition was found to be neither temperature nor dose dependent. Under the operation of the ion beam the SFT production was very rapid, with no evidence for further growth once formed, indicating that they probably formed as a result of cascade collapse in a single cascade. The number density of the defects was found to saturate at low dose (∼0.68 dpa). No cavities were observed regardless of the irradiation temperature between 60 °C and 400 °C for doses up to 5.4 dpa. In contrast, cavities have been observed after neutron irradiation in the same material at similar doses and temperatures indicating that helium, produce during neutron irradiation, may be essential for the nucleation and growth of cavities.

  5. Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons

    Science.gov (United States)

    Arutyunov, N.; Emtsev, V.; Krause-Rehberg, R.; Elsayed, M.; Kessler, C.; Kozlovski, V.; Oganesyan, G.

    2015-06-01

    Defects in phosphorus-doped silicon samples of floating-zone material, n-FZ-Si(P), produced under irradiation with 15 MeV protons at room temperature are studied by positron annihilation lifetime spectroscopy over the temperature range of ∼ 30 K - 300 K and by low- temperature Hall effect measurements. After annealing of E-centersand divacancies, we detected for the first time high concentrations of positron traps which had not been observed earlier. These defects are isochronally annealed over the temperature interval of ∼ 320 °C - 700 °C they manifest themselves as electrically neutral deep donor centersin the material of n-type. A long-lived component of the positron lifetime, τ2(I2 enthalpy and entropy of annealing of these centersare Ea ∼ 1.05(0.21) eV and ΔSm ≈ 3.1(0.6)kB, respectively. It is argued that the microstructure of the defect consists of two vacancies, VV, and one atom of phosphorus, P. The split configuration of the VPV complex is shortly discussed.

  6. Effect of heavy ion irradiation on thermodynamically equilibrium Zr-Excel alloy

    Science.gov (United States)

    Yu, Hongbing; Liang, Jianlie; Yao, Zhongwen; Kirk, Mark A.; Daymond, Mark R.

    2017-05-01

    The thermodynamically equilibrium state was achieved in a Zr-Sn-Nb-Mo alloy by long-term annealing at an intermediate temperature. The fcc intermetallic Zr(Mo, Nb)2 enriched with Fe was observed at the equilibrium state. In-situ 1 MeV Kr2+ heavy ion irradiation was performed in a TEM to study the stability of the intermetallic particles under irradiation and the effects of the intermetallic particle on the evolution of type dislocation loops at different temperatures from 80 to 550 °C. Chemi-STEM elemental maps were made at the same particles before and after irradiation up to 10 dpa. It was found that no elemental redistribution occurs at 200 °C and below. Selective depletion of Fe was observed from some precipitates under irradiation at higher temperatures. No change in the morphology of particles and no evidence showing a crystalline to amorphous transformation were observed at all irradiation temperatures. The formation of type dislocation loops was observed under irradiation at 80 and 200 °C, but not at 450 and 550 °C. The loops were non-uniformly distributed; a localized high density of type dislocation loops were observed near the second phase particles; we suggest that loop nucleation is favored as a result of the stress induced by the particles, rather than by elemental redistribution. The stability of the second phase particles and the formation of the type loops under heavy ion irradiation are discussed.

  7. Rows of Dislocation Loops in Aluminium Irradiated by Aluminium Ions

    DEFF Research Database (Denmark)

    Henriksen, L.; Johansen, A.; Koch, J.

    1967-01-01

    Single-crystal aluminium specimens, irradiated with 50-keV aluminium ions, contain dislocation loops that are arranged in regular rows along <110 > directions. ©1967 The American Institute of Physics......Single-crystal aluminium specimens, irradiated with 50-keV aluminium ions, contain dislocation loops that are arranged in regular rows along directions. ©1967 The American Institute of Physics...

  8. Amorphous molecular junctions produced by ion irradiation on carbon nanotubes

    International Nuclear Information System (INIS)

    Wang Zhenxia; Yu Liping; Zhang Wei; Ding Yinfeng; Li Yulan; Han Jiaguang; Zhu Zhiyuan; Xu Hongjie; He Guowei; Chen Yi; Hu Gang

    2004-01-01

    Experiments and molecular dynamics have demonstrated that electron irradiation could create molecular junctions between crossed single-wall carbon nanotubes. Recently molecular dynamics computation predicted that ion irradiation could also join single-walled carbon nanotubes. Employing carbon ion irradiation on multi-walled carbon nanotubes, we find that these nanotubes evolve into amorphous carbon nanowires, more importantly, during the process of which various molecular junctions of amorphous nanowires are formed by welding from crossed carbon nanotubes. It demonstrates that ion-beam irradiation could be an effective way not only for the welding of nanotubes but also for the formation of nanowire junctions

  9. Spectroscopic characterization of ion-irradiated multi-layer graphenes

    Energy Technology Data Exchange (ETDEWEB)

    Tsukagoshi, Akira [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Honda, Shin-ichi, E-mail: s-honda@eng.u-hyogo.ac.jp [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Osugi, Ryo [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Okada, Hiraku [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); Niibe, Masahito [Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205 (Japan); Terasawa, Mititaka [Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Hirase, Ryuji; Izumi, Hirokazu; Yoshioka, Hideki [Hyogo Prefectural Institute of Technology, Kobe 654-0037 (Japan); Niwase, Keisuke [Hyogo University of Teacher Education, Kato, Hyogo 673-1494 (Japan); Taguchi, Eiji [Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Ibaraki, Osaka 567-0047 (Japan); Lee, Kuei-Yi [Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Oura, Masaki [RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan)

    2013-11-15

    Low-energy Ar ions (0.5–2 keV) were irradiated to multi-layer graphenes and the damage process, the local electronic states, and the degree of alignment of the basal plane, and the oxidation process upon ion irradiation were investigated by Raman spectroscopy, soft X-ray absorption spectroscopy (XAS) and in situ X-ray photoelectron spectroscopy (XPS). By Raman spectroscopy, we observed two stages similar to the case of irradiated graphite, which should relate to the accumulations of vacancies and turbulence of the basal plane, respectively. XAS analysis indicated that the number of sp{sup 2}-hybridized carbon (sp{sup 2}-C) atoms decreased after ion irradiation. Angle-resolved XAS revealed that the orientation parameter (OP) decreased with increasing ion energy and fluence, reflecting the turbulence of the basal plane under irradiation. In situ XPS shows the oxidation of the irradiated multi-layer graphenes after air exposure.

  10. Increase of the electrical resistance of thin copper film due to 14 MeV neutron irradiation

    International Nuclear Information System (INIS)

    Agrawal, S.K.; Kumar, U.; Nigam, A.K.; Singh, S.P.

    1981-01-01

    The variation in the electrical resistance of thin copper film (500 A 0 thick), grown on the glass slide has been measured with increasing 14 MeV neutron irradiation time. The electrical resistance vs irradiation time curve shows an interesting behaviour after an irradiation of 40 minutes. However, there is a net increase in the electrical resistance with increasing neutron dose. The maximum increase in the observed electrical resistance after an irradiation of 115 mins, is 4.45%. The microstructural studies of irradiated film were made using TEM and TED techniques. The TEM patterns up to an irradiation time of 1.00 hr do not show any appreciable change in the microstructure. The TED patterns also do not show any appreciable change in the diffraction pattern up to an irradiation time of 1.0 hr. But after an irradiation time of 1.5 hrs, two extra rings appear in the TED pattern which disappear with increasing neutron irradiation time

  11. Hardening of ODS ferritic steels under irradiation with high-energy heavy ions

    Science.gov (United States)

    Ding, Z. N.; Zhang, C. H.; Yang, Y. T.; Song, Y.; Kimura, A.; Jang, J.

    2017-09-01

    Influence of the nanoscale oxide particles on mechanical properties and irradiation resistance of oxide-dispersion-strengthened (ODS) ferritic steels is of critical importance for the use of the material in fuel cladding or blanket components in advanced nuclear reactors. In the present work, impact of structures of oxide dispersoids on the irradiation hardening of ODS ferritic steels was studied. Specimens of three high-Cr ODS ferritic steels containing oxide dispersoids with different number density and average size were irradiated with high-energy Ni ions at about -50 °C. The energy of the incident Ni ions was varied from 12.73 MeV to 357.86 MeV by using an energy degrader at the terminal so that a plateau of atomic displacement damage (∼0.8 dpa) was produced from the near surface to a depth of 24 μm in the specimens. A nanoindentor (in constant stiffness mode with a diamond Berkovich indenter) and a Vickers micro-hardness tester were used to measure the hardeness of the specimens. The Nix-Gao model taking account of the indentation size effect (ISE) was used to fit the hardness data. It is observed that the soft substrate effect (SSE) can be diminished substantially in the irradiated specimens due to the thick damaged regions produced by the Ni ions. A linear correlation between the nano-hardeness and the micro-hardness was found. It is observed that a higher number density of oxide dispersoids with a smaller average diameter corresponds to an increased resistance to irradiation hardening, which can be ascribed to the increased sink strength of oxides/matrix interfaces to point defects. The rate equation approach and the conventional hardening model were used to analyze the influence of defect clusters on irradiation hardening in ODS ferritic steels. The numerical estimates show that the hardening caused by the interstitial type dislocation loops follows a similar trend with the experiment data.

  12. Experimental and Calculated Effectiveness of a Radiochromic Dye Film to Stopping 21 MeV 7Li- and 64 MeV 16O Ions

    DEFF Research Database (Denmark)

    Olsen, Kjeld J; Hansen, Johnny

    1984-01-01

    Relative radiation effectiveness, RE, of 21 MeV 7Li and 64 MeV 16O ions being completely stopped in a tissue equivalent film dose meter has been measured as a function of penetration depth and energy, and the results have been compared with calculations based on a δ-ray theory for heavy charged...... particles developed by Katz et al. The experiment was designed to test calculations particularly in the Bragg-peak region of the slowing down particles where significant deviation between theory and experiment was found. Fitting of the characteristic D37 dose and the size of the radiation sensitive element...... in the detector, which are important parameters in the theoretical model, does not improve the overall correlation between theory and experiment. It is concluded that disagreement between theoretical and experimental RE-values below 1.5 MeV/amu is partly due to lack of equivalence between the δ-ray spectrum...

  13. Biological effect of penetration controlled irradiation with ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Atsushi; Shimizu, Takashi; Kikuchi, Masahiro; Kobayashi, Yasuhiko; Watanabe, Hiroshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Yamashita, Takao

    1997-03-01

    To investigate the effect of local irradiation with ion beams on biological systems, technique for penetration controlled irradiation has been established. The range in a target was controlled by changing the distance from beam window in the atmosphere, and could be controlled linearly up to about 31 {mu}m in biological material. In addition, the effects of the penetration controlled irradiations with 1.5 MeV/u C and He ions were examined using tobacco pollen. The increased frequency of leaky pollen produced by ion beams suggests that the efficient pollen envelope damages would be induced at the range-end of ion beams. (author)

  14. Effect of heavy ion irradiation on C 60

    Science.gov (United States)

    Lotha, S.; Ingale, A.; Avasthi, D. K.; Mittal, V. K.; Mishra, S.; Rustagi, K. C.; Gupta, A.; Kulkarni, V. N.; Khathing, D. T.

    1999-06-01

    Thin films of C 60 were subjected to swift heavy ion irradiation spanning the region from 2 to 11 keV/nm of electronic excitation. Studies of the irradiated films by Raman spectroscopy indicated polymerization and damage of the film with an ion fluence. The ion track radii are estimated for various ions using the Raman data. Photoluminescence spectroscopy of the irradiated film indicated a decrease in the C 60 phase with a dose, and an increase in the intensity at the 590 nm wavelength, which is attributed to an increase in the oxygen content.

  15. Calibration of BAS-TR image plate response to high energy (3-300 MeV) carbon ions

    Science.gov (United States)

    Doria, D.; Kar, S.; Ahmed, H.; Alejo, A.; Fernandez, J.; Cerchez, M.; Gray, R. J.; Hanton, F.; MacLellan, D. A.; McKenna, P.; Najmudin, Z.; Neely, D.; Romagnani, L.; Ruiz, J. A.; Sarri, G.; Scullion, C.; Streeter, M.; Swantusch, M.; Willi, O.; Zepf, M.; Borghesi, M.

    2015-12-01

    The paper presents the calibration of Fuji BAS-TR image plate (IP) response to high energy carbon ions of different charge states by employing an intense laser-driven ion source, which allowed access to carbon energies up to 270 MeV. The calibration method consists of employing a Thomson parabola spectrometer to separate and spectrally resolve different ion species, and a slotted CR-39 solid state detector overlayed onto an image plate for an absolute calibration of the IP signal. An empirical response function was obtained which can be reasonably extrapolated to higher ion energies. The experimental data also show that the IP response is independent of ion charge states.

  16. Self-ion Irradiation Damage of F/M and ODS steels

    International Nuclear Information System (INIS)

    Kang, Suk Hoon; Chun, Young-Bum; Noh, Sanghoon; Jang, Jinsung; Kim, Tae Kyu

    2014-01-01

    Oxide dispersion strengthened (ODS) ferritic steels are potential high-temperature materials that are stabilized by dispersed particles at elevated temperatures. These dispersed particles improve the tensile strength and creep rupture strength, they are expected to increase the operation temperature up to approximately 650 .deg. C and also enhance the energy efficiency of the fusion reactor. Some reports described that the nano-clusters are strongly resistant to coarsening by annealing up to 1000 .deg. C, and nanoclusters do not change after ion irradiation up to 0.7 dpa at 300 .deg. C. ODS steels will be inevitably exposed to neutron irradiation condition; the irradiation damages, creep and swelling are always great concern. The dispersed oxide particles are believed to determine the performance of the steel, even the radiation resistance. In this study, F/M and ODS model alloys of Korea Atomic Energy Research Institute (KAERI) were irradiated by Fe 3+ self-ion to emulate the neutron irradiation effect. In this study, Fe 3+ self-ion irradiation is used as means of introducing radiation damage in F/M steel and ODS steel. The ion accelerator named DuET (in Kyoto University, Japan) was used for irradiation of Fe 3+ ion by 6.4 MeV at 300 .deg. C. The maximum damage rate in F/M and ODS steels were estimated roughly 6 dpa. After radiation, point or line defects were dominantly observed in F/M steel, on the other hands, small circular cavities were typically observed in ODS steel. Nanoindentation is a useful tool to determine the irradiationinduced hardness change in the damage layer of ionirradiated iron base alloys

  17. Stopping power of liquid water for carbon ions in the energy range between 1 MeV and 6 MeV

    International Nuclear Information System (INIS)

    Rahm, J M; Baek, W Y; Rabus, H; Hofsäss, H

    2014-01-01

    The stopping power of liquid water was measured for the first time for carbon ions in the energy range between 1 and 6 MeV using the inverted Doppler shift attenuation method. The feasibility study carried out within the scope of the present work shows that this method is well suited for the quantification of the controversial condensed phased effect in the stopping power for heavy ions in the intermediate energy range. The preliminary results of this work indicate that the stopping power of water for carbon ions with energies prevailing in the Bragg-peak region is significantly lower than that of water vapor. In view of the relatively high uncertainty of the present results, a new experiment with uncertainties less than the predicted difference between the stopping powers of both water phases is planned. (paper)

  18. Clustered DNA damage induced by proton and heavy ion irradiation

    International Nuclear Information System (INIS)

    Davidkova, M.; Pachnerova Brabcova, K; Stepan, V.; Vysin, L.; Sihver, L.; Incerti, S.

    2014-01-01

    Ionizing radiation induces in DNA strand breaks, damaged bases and modified sugars, which accumulate with increasing density of ionizations in charged particle tracks. Compared to isolated DNA damage sites, the biological toxicity of damage clusters can be for living cells more severe. We investigated the clustered DNA damage induced by protons (30 MeV) and high LET radiation (C 290 MeV/u and Fe 500 MeV/u) in pBR322 plasmid DNA. To distinguish between direct and indirect pathways of radiation damage, the plasmid was irradiated in pure water or in aqueous solution of one of the three scavengers (coumarin-3-carboxylic acid, dimethylsulfoxide, and glycylglycine). The goal of the contribution is the analysis of determined types of DNA damage in dependence on radiation quality and related contribution of direct and indirect radiation effects. The yield of double strand breaks (DSB) induced in the DNA plasmid-scavenger system by heavy ion radiation was found to decrease with increasing scavenging capacity due to reaction with hydroxyl radical, linearly with high correlation coefficients. The yield of non-DSB clusters was found to occur twice as much as the DSB. Their decrease with increasing scavenging capacity had lower linear correlation coefficients. This indicates that the yield of non-DSB clusters depends on more factors, which are likely connected to the chemical properties of individual scavengers. (authors)

  19. Study of properties of the plastic scintillator EJ-260 under irradiation with 150 MeV protons and 1.2MeV gamma-rays

    Science.gov (United States)

    Dormenev, V.; Brinkmann, K.-T.; Korjik, M.; Novotny, R. W.

    2017-11-01

    One of the most critical aspects for the application of a scintillation material in high energy physics is the degradation of properties of the material in an environment of highly ionizing particles in particular due to hadrons. There are presently several detector concepts in consideration being based on organic scintillator material for fast timing of charged particles or sampling calorimeters. We have tested different samples of the organic plastic scintillator EJ-260 produced by the company Eljen Technology (Sweetwater, TX, USA). The ongoing activity has characterized the relevant parameters such as light output, kinetics and temperature dependence. The study has focused on the change of performance after irradiation with 150 MeV protons up to an integral fluence of 5·1013 protons/cm2 as well as with a strong 60Co γ-source accumulating an integral dose of 100 Gy. The paper will report on the obtained results.

  20. Momentum transfer with light ions at energies from 70 MeV to 1000 MeV

    International Nuclear Information System (INIS)

    Saint Laurent, F.; Conjeaud, M.; Dayras, R.; Harar, S.; Oeschler, H.; Volant, C.

    1982-01-01

    Angular correlations of fission fragments induced by bombarding a 232 Th target with protons, deuterons and alpha particles of energies from 70 MeV to 1000 MeV have been measured. They give information about the forward momentum imparted to the fissioning nuclei. We present the average values of the transferred linear momentum ([p vertical stroke vertical stroke ]) as a function of the incident energy and propose a classification into three regimes of dominating processes leading to fission: (I) low-energy behaviour, for E/A less than 10 MeV/u [p vertical stroke vertical stroke ]/psub(i) approx. equal to 1. (II) Between 10 MeV/u and about 70 MeV/u, [p vertical stroke vertical stroke ]/psub(i) decreases progressively down to 0.5 but remains proportional to the projectile mass. (III) The region between 70 MeV/u and about 1000 MeV/u corresponds to a transition region where the projectiles, whatever their masses, tend to transfer the same momentum. (orig.)

  1. Variation of carrier concentration and interface trap density in 8MeV electron irradiated c-Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bhat, Sathyanarayana, E-mail: asharao76@gmail.com; Rao, Asha, E-mail: asharao76@gmail.com [Department of Physics, Mangalore Institute of Technology and Engineering, Moodabidri, Mangalore-574225 (India); Krishnan, Sheeja [Department of Physics, Sri Devi Institute of Technology, Kenjar, Mangalore-574142 (India); Sanjeev, Ganesh [Microtron Centre, Department of Physics, Mangalore University, Mangalagangothri-574199 (India); Suresh, E. P. [Solar Panel Division, ISRO Satellite Centre, Bangalore-560017 (India)

    2014-04-24

    The capacitance and conductance measurements were carried out for c-Si solar cells, irradiated with 8 MeV electrons with doses ranging from 5kGy – 100kGy in order to investigate the anomalous degradation of the cells in the radiation harsh environments. Capacitance – Voltage measurements indicate that there is a slight reduction in the carrier concentration upon electron irradiation due to the creation of radiation induced defects. The conductance measurement results reveal that the interface state densities and the trap time constant increases with electron dose due to displacement damages in c-Si solar cells.

  2. Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents

    Directory of Open Access Journals (Sweden)

    V. G. Vorobiov

    2015-10-01

    Full Text Available Results of reverse electrophysical characteristics study of red and green LEDs, initial and irradiated with 2 MeV electrons were given. It was found that reverse current was predominantly caused by carriers tunneling at Urev ≤ 9 V, and by the avalanche multiplication at Urev ≥ 13 V, in the range U = 9 ÷ 13 V both mechanisms are available. Current increase at high voltage areas (Urev > 19 V is limited by the base resistance of diode. In the case of significant reverse currents (I > 1 mA irradiation of diodes leads to the shift of reverse current-voltage characteristics into the high voltages direction.

  3. Experimental study on 14 MeV neutron irradiation effects in FLASH ROM28F256 and 29C256

    International Nuclear Information System (INIS)

    He Chaohui; Chen Xiaohua; Li Guozheng; Wang Yanping; Ji Lin; Geng Bin; Yang Hailiang; Liu Enke

    2000-01-01

    Experimental results of neutron irradiation effects are given for FLASH ROM. New phenomena are observed. The 14 MeV neutron irradiation effects in 28F256 and 29C256 devices are different from the single event effects. Errors are only '0'→'1'. There is a neutron flux threshold. Errors occur when neutron flux is above the threshold, no error occurs when below the threshold. The errors go up with the increase of the neutron flux until all '0' change to '1'. Hard errors, that new data cannot be written in memory with programmer, occur in devices which are measured during irradiation and irradiated in power on mode. Errors rise with the increase of reading times. Under same neutron flux, there is no error in devices in power off mode, however, errors occur in all devices in power on mode, moreover, undefined errors occur

  4. Recovery of the spermatogenetic epithelium in the mouse after irradiation with 1-MeV fission neutrons

    International Nuclear Information System (INIS)

    Aardweg, G.J.M.J. van den.

    1983-01-01

    In this thesis the recovery of the spermatogenetic epithelium in the mouse is studied after damage with 1-MeV fission neutrons. A severe depletion of A-spermatogonia and radiosensitive stem cells occurs after neutron irradiation. Recovery of the epithelium is initiated by surviving radioresistant stem cells giving rise to colonies, which grow into the empty seminiferous tubules. After discussing properties of normal and irradiated spermatogenetic epithelium, the growth and the differentiation of spermatogenetic colonies in the mouse testis after irradiation, as well as response and kinetics of colony-forming spermatogonial stem cells in CBA mice up to 30 weeks after a first neutron dose and recovery of the epithelium after a second irradiation are investigated. These four subjects are dealt with in separate papers. Finally, a discussion and a summary of these studies is presented. (Auth.)

  5. High repetition rate laser-driven MeV ion acceleration at variable background pressures

    Science.gov (United States)

    Snyder, Joseph; Ngirmang, Gregory; Orban, Chris; Feister, Scott; Morrison, John; Frische, Kyle; Chowdhury, Enam; Roquemore, W. M.

    2017-10-01

    Ultra-intense laser-plasma interactions (LPI) can produce highly energetic photons, electrons, and ions with numerous potential real-world applications. Many of these applications will require repeatable, high repetition targets that are suitable for LPI experiments. Liquid targets can meet many of these needs, but they typically require higher chamber pressure than is used for many low repetition rate experiments. The effect of background pressure on the LPI has not been thoroughly studied. With this in mind, the Extreme Light group at the Air Force Research Lab has carried out MeV ion and electron acceleration experiments at kHz repetition rate with background pressures ranging from 30 mTorr to >1 Torr using a submicron ethylene glycol liquid sheet target. We present these results and provide two-dimensional particle-in-cell simulation results that offer insight on the thresholds for the efficient acceleration of electrons and ions. This research is supported by the Air Force Office of Scientific Research under LRIR Project 17RQCOR504 under the management of Dr. Riq Parra and Dr. Jean-Luc Cambier. Support was also provided by the DOD HPCMP Internship Program.

  6. Wide variety of flower-color and -shape mutants regenerated from leaf cultures irradiated with ion beams

    International Nuclear Information System (INIS)

    Okamura, M.; Yasuno, N.; Ohtsuka, M.; Tanaka, A.; Shikazono, N.; Hase, Y.

    2003-01-01

    The efficiency of ion-beam irradiation combined with tissue culture in obtaining floral mutants was investigated and compared with those of gamma rays and X-rays in carnation. Leaf segments of carnation plants in vitro were irradiated with the 220 MeV carbon ions, and cultured till the shoot regenerated. The carbon ion had the highest effect in reducing the regeneration frequency, and the RBE value with respect to gamma-rays was four. The higher mutation frequency and the wider mutation spectrum were obtained in plants irradiated with the carbon ions than low LET radiations. Three new carnation varieties developed by ion-beam irradiation were applied for the registration of the Japanese Ministry of Agriculture, Forestry and Fisheries. The results indicate that ion beam irradiation could induce wide variety of flower-color and -shape mutants, and that the combined method of ion-beam irradiation with tissue culture is useful to obtain the commercial varieties in a short time

  7. The study on the electrical resistivity of Cu/V multilayer films subjected to helium (He) ion irradiation

    Science.gov (United States)

    Wang, P. P.; Xu, C.; Fu, E. G.; Du, J. L.; Gao, Y.; Wang, X. J.; Qiu, Y. H.

    2018-05-01

    Sputtering-deposited Cu/V multilayer films with the individual layer thickness varying from 2.5 nm to 100 nm were irradiated by 1 MeV helium (He) ion at the fluence of 6 ×1016 ions ·cm-2 at room temperature. The resistivity of Cu/V multilayer films after ion irradiation was evaluated as a function of individual layer thickness at 300 K and compared with their resistivity before ion irradiation. The results show that the resistivity change before and after ion irradiation is largely determined by the interface structure, grain boundary and radiation induced defects. A model amended based on the model used in describing the resistivity of as-deposited Cu/V multilayer films was proposed to describe the resistivity of ion irradiated Cu/V multilayer films by considering the point defects induced by ion irradiation, the effect of interface absorption on defects and the effect of interface microstructure in the multilayer films.

  8. Ion irradiation of CH4-containing icy mixtures

    International Nuclear Information System (INIS)

    Baratta, G.A.; Domingo, M.; Ferini, G.; Leto, G.; Palumbo, M.E.; Satorre, M.A.; Strazzulla, G.

    2003-01-01

    We have studied by infrared absorption spectroscopy the effects of ion irradiation with 60 keV Ar 2+ ions on pure methane (CH 4 ) ice at 12 K and mixtures with water (H 2 O) and nitrogen (N 2 ). Ion irradiation, among other effects, causes the rupture of original molecular bonds and the formation of molecular species not present in the initial ice. Here we present the experimental results and discuss their astrophysical relevance

  9. Heavy ion irradiation induces autophagy in irradiated C2C12 myoblasts and their bystander cells

    International Nuclear Information System (INIS)

    Hino, Mizuki; Tajika, Yuki; Hamada, Nobuyuki

    2010-01-01

    Autophagy is one of the major processes involved in the degradation of intracellular materials. Here, we examined the potential impact of heavy ion irradiation on the induction of autophagy in irradiated C2C12 mouse myoblasts and their non-targeted bystander cells. In irradiated cells, ultrastructural analysis revealed the accumulation of autophagic structures at various stages of autophagy (id est (i.e.) phagophores, autophagosomes and autolysosomes) within 20 min after irradiation. Multivesicular bodies (MVBs) and autolysosomes containing MVBs (amphisomes) were also observed. Heavy ion irradiation increased the staining of microtubule-associated protein 1 light chain 3 and LysoTracker Red (LTR). Such enhanced staining was suppressed by an autophagy inhibitor 3-methyladenine. In addition to irradiated cells, bystander cells were also positive with LTR staining. Altogether, these results suggest that heavy ion irradiation induces autophagy not only in irradiated myoblasts but also in their bystander cells. (author)

  10. Hardness and depth-dependent microstructure of ion-irradiated MgAl2O4

    International Nuclear Information System (INIS)

    Zinkle, S.J.

    1988-01-01

    Stoichiometric polycrystalline magnesium aluminate spinel has been irradiated at 25 and 650/degree/C with 2.4 MeV Mg/sup plus/ ions to a fluence of 1.4 /times/ 10 21 ions/m 2 (/approximately/35 dpa peak damage level). Microindentation hardness measurements and transmission electron microscopy combined with energy dispersive X-ray spectroscopy measurements were used to characterize the irradiation effects. The room-temperature hardness of spinel increased by about 5% after irradiation at both temperatures. There was no evidence for amorphization at either irradiation temperature. Interstitial-type dislocations loops lying on /l brace/110/r brace/ and /l brace/111/r brace/ planes with Burgers vectors were observed at intermediate depths (/approximately/1 μm) along the ion range. The /l brace/111/r brace/ loops are presumably formed from /l brace/111/r brace/ loops as a result of a shear on the anion sublattice. Only about 0.05% of the calculated displacements were visible in the form of loops, which indicates that spinel has a high resistance to aggregate damage accumulation. The peak damage region contained a high density of dislocations tangles. There was no evidence for the formation of voids or vacancy loops. The specimen irradiated at 650/degree/C was denuded of dislocation loops within /approximately/1 μm of the surface. 25 refs., 16 figs., 5 tabs

  11. Development of a single ion micro-irradiation facility for experimental radiobiology at cell level

    International Nuclear Information System (INIS)

    Barberet, Ph.

    2003-10-01

    A micro-irradiation device has been developed for radiobiology applications at the scale of the cell. This device is based on an upgrade of an existing micro-beam line that was already able to deliver a 1 to 3 MeV proton or alpha beam of low intensity and whose space resolution is lower than 1 micrometer in vacuum. The important part of this work has been the development of an irradiation stage designed to fit on the micro-probe and able to deliver ions in the air with an absolute accuracy of a few micrometers. A program has been set up to monitor the complete irradiation line in testing and in automatic irradiation operating phases. Simulation tools based on Monte-Carlo calculations have been validated through comparisons with experimental data particularly in the field of spatial resolution and of the number of ions delivered. The promising results show the possibility in a near future to use this tool to study the response of cells to very low irradiation doses down to the extreme limit of one ion per cell

  12. Characterization of matrix damage in ion-irradiated reactor vessel steel

    International Nuclear Information System (INIS)

    Fujii, Katsuhiko; Fukuya, Koji

    2004-01-01

    Exact nature of the matrix damage, that is one of radiation-induced nano-scale microstructural features causing radiation embrittlement of reactor vessel, in irradiated commercial steels has not been clarified yet by direct characterization using transmission electron microscopy (TEM). We designed a new preparation method of TEM observation samples and applied it to the direct TEM observation of the matrix damage in the commercial steel samples irradiated by ions. The simulation irradiation was carried out by 3 MeV Ni 2+ ion to a dose of 1 dpa at 290degC. Thin foil specimens for TEM observation were prepared using the modified focused ion beam method. A weak-beam TEM study was carried out for the observation of matrix damage in the samples. Results of this first detailed observation of the matrix damage in the irradiated commercial steel show that it is consisted of small dislocation loops. The observed and analyzed dislocation loops have Burgers vectors b = a , and a mean image size and the number density are 2.5 nm and about 1 x 10 22 m -3 , respectively. In this experiment, all of the observed dislocation loops were too small to determine the vacancy or interstitial nature of the dislocation loops directly. Although it is an indirect method, post-irradiation annealing was used to infer the loop nature. Most of dislocation loops were stable after the annealing at 400degC for 30 min. This result suggests that their nature is interstitial. (author)

  13. Effects of cavitation on damage calculations in ion-irradiated P7 alloy

    International Nuclear Information System (INIS)

    Sindelar, R.L.; Farrens, S.N.; Kulcinski, G.L.

    1985-01-01

    The purpose of this study is to investigate the effect of voids on the depth-dependent damage energy in ion-irradiated metals. Corrections to the dose at the swelling peak will be used to obtain the swelling rate of ion-irradiated 316-type stainless steels. Samples of the P7 alloy were ion-irradiated to four fluence levels up to a peak dose level of 100 dpa at 650 0 C. The depth-dependent void parameters extracted in cross section were used to model the effect of voids on the depth-dependent damage produced during 14 MeV nickel ion irradiation. An increase in the range of damage produced from the original foil surface for the target containing voids was modeled as a first-order correction to the damage profile. A second-order effect, void straggling, was shown to cause a time-dependent decrease in the damage rate at the peak swelling depth. Corrections applied to the dose at the peak swelling depth yield swelling rates approaching 0.7%/dpa

  14. Shaping of Au nanoparticles embedded in various layered structures by swift heavy ion beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Dawi, E.A., E-mail: elmuez.dawi@gmail.com [Ajman University of Science and Technology, Basic Science and Education, Physics Department, P.O. Box 346 (United Arab Emirates); Debye Institute for Nanomaterials, Nanophotonics Section, Utrecht University, P.O. Box 80000, 3508 TA Utrecht (Netherlands); ArnoldBik, W.M. [Eindhoven University of Technology, Irradiation Technology, 5600 GM Eindhoven (Netherlands); Ackermann, R.; Habraken, F.H.P.M. [Debye Institute for Nanomaterials, Nanophotonics Section, Utrecht University, P.O. Box 80000, 3508 TA Utrecht (Netherlands)

    2016-10-01

    We present a novel method to extend the ion-beam induced shaping of metallic nanoparticles in various layered structures. Monodisperse Au nanoparticles having mean diameter of 30 nm and their ion-shaping process is investigated for a limited number of experimental conditions. Au nanoparticles were embedded within a single plane in various layered structures of silicon nitride films (Si{sub 3}N{sub 4}), combinations of oxide-nitride films (SiO{sub 2}-Si{sub 3}N{sub 4}) and amorphous silicon films (a-Si) and have been sequentially irradiated at 300 K at normal incidence with 50 and 25 MeV Ag ions, respectively. Under irradiation with heavy Ag ions and with sequential increase of the irradiation fluence, the evolution of the Au peak derived from the Rutherford Backscattering Spectrometry show broadening in Au peak, which indicates that the Au becomes distributed over a larger depth region, indicative of the elongation of the nanoparticles. The latter is observed almost for every layer structure investigated except for Au nanoparticles embedded in pure a-Si matrix. The largest elongation rate at all fluences is found for the Au nanoparticles encapsulated in pure Si{sub 3}N{sub 4} films. For all irradiation energy applied, we again demonstrate the existence of both threshold and saturation fluences for the elongation effects mentioned.

  15. Microstructural response of InGaN to swift heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, L.M., E-mail: zhanglm@lzu.edu.cn [School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000 (China); Jiang, W. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Fadanelli, R.C. [Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Porto Alegre 91500 (Brazil); Ai, W.S.; Peng, J.X.; Wang, T.S. [School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000 (China); Zhang, C.H. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

    2016-12-01

    A monocrystalline In{sub 0.18}Ga{sub 0.82}N film of ∼275 nm in thickness grown on a GaN/Al{sub 2}O{sub 3} substrate was irradiated with 290 MeV {sup 238}U{sup 32+} ions to a fluence of 1.2 × 10{sup 12} cm{sup −2} at room temperature. The irradiated sample was characterized using helium ion microscopy (HIM), Rutherford backscattering spectrometry under ion-channeling conditions (RBS/C), and high-resolution X-ray diffraction (HRXRD). The irradiation leads to formation of ion tracks throughout the thin In{sub 0.18}Ga{sub 0.82}N film and the 3.0 μm thick GaN buffer layer. The mean diameter of the tracks in In{sub 0.18}Ga{sub 0.82}N is ∼9 nm, as determined by HIM examination. Combination of the HIM and RBS/C data suggests that the In{sub 0.18}Ga{sub 0.82}N material in the track is likely to be highly disordered or fully amorphized. The irradiation induced lattice relaxation in In{sub 0.18}Ga{sub 0.82}N and a distribution of d-spacing of the (0 0 0 2) planes in GaN with lattice expansion are observed by HRXRD.

  16. Charge deep level transient spectroscopy study of 3 - 7 MeV/amu ion and fast neutron irradiation-induced changes in MOS structures

    International Nuclear Information System (INIS)

    Stano, J.; Skuratov, V.A.; Ziska, M.

    2001-01-01

    Radiation-induced changes in MOS capacitor structures irradiated with Bi (710 MeV), Kr (245 MeV), Ar (280, 155 MeV) ions and fast neutrons (E > 0.1 MeV) have been studied in view of Q-DLTS and C-V techniques. As was found, high energy ion and neutron irradiation enhance the induction of positive charge density in the oxide layer of MOS samples. The number of electrically active defects in this layer strongly decreases under dense electronic excitations. No dependence of vacancy-oxygen center concentration in silicon substrate normalized per number of displaced atoms by nuclear elastic collisions on projectile type have been observed

  17. Temperature annealing of tracks induced by ion irradiation of graphite

    International Nuclear Information System (INIS)

    Liu, J.; Yao, H.J.; Sun, Y.M.; Duan, J.L.; Hou, M.D.; Mo, D.; Wang, Z.G.; Jin, Y.F.; Abe, H.; Li, Z.C.; Sekimura, N.

    2006-01-01

    Highly oriented pyrolytic graphite (HOPG) samples were irradiated by Xe ions of initial kinetic energy of 3 MeV/u. The irradiations were performed at temperatures of 500 and 800 K. Scanning tunneling microscopy (STM) images show that the tracks occasionally have elongated structures under high-temperature irradiation. The track creation yield at 800 K is by three orders of magnitude smaller compared to that obtained during room-temperature irradiation. STM and Raman spectra show that amorphization occurs in graphite samples irradiated at 500 K to higher fluences, but not at 800 K. The obtained experimental results clearly reveal that the irradiation under high temperature causes track annealing

  18. In situ study of the effects of heavy-ion irradiation on co-evaporated CoSi2 films

    International Nuclear Information System (INIS)

    Allen, C.W.; Smith, D.A.

    1990-11-01

    The in situ ion irradiation capability of Argonne's HVEM-Tandem User Facility has been employed to determine the effects of 1.5 MeV Kr + irradiation and 300 kV electron irradiation on the crystallization of as-deposited and of partially crystallized 40 nm thick films of CoSi 2 . Ion fluxes ranged from 8.5 x 10 14 to 6.8 x 10 15 m -2 s -1 for which beam heating effects may be neglected. The maximum electron flux at 300 kV was 0.8 x 10 23 m -2 s -1 . The maximum temperature at which crystalline CoSi 2 is amorphized by the ion irradiation of flux = 6.8 x 10 15 m -2 s -1 is between 250 and 280 K. At higher temperatures amorphous material crystallizes by growth of any preexisting crystals and by classical nucleation and growth, with radial growth rates which are proportional to ion flux. The average degree of transformation per ion is 4 x 10 -26 m 3 per ion. Thermally induced crystallization of as-deposited films occurs above approximately 420 K. For ion doses at least as low as 3.4 x 10 16 m -2 ion irradiation at 300 K promotes thermal crystallization at 450 K, by virtue of enhanced apparant nucleation and at large doses, by enhanced growth rate. 8 refs., 2 figs

  19. Fragment ion distribution in charge-changing collisions of 2-MeV Si ions with C60

    Science.gov (United States)

    Itoh, A.; Tsuchida, H.; Miyabe, K.; Majima, T.; Nakai, Y.

    2001-09-01

    We have measured positive fragment ions produced in collisions of 2 MeV Siq+ (q=0, 1, 2, 4) projectiles with a C60 molecular target. The measurement was performed with a time-of-flight coincidence method between fragment ions and charge-selected outgoing projectiles. For all the charge-changing collisions investigated here, the mass distribution of small fragment ions C+n (n=1-12) can be approximated fairly well by a power-law form of n-λ as a function of the cluster size n. The power λ derived from each mass distribution is found to change strongly according to different charge-changing collisions. As a remarkable experimental finding, the values of λ(loss) in electron loss collisions are almost the same for the same final charge states k irrespective of the initial charge q, exhibiting a nearly perfect linear relationship with k. We also performed calculations of the projectile ionization on the basis of the semiclassical approximation and obtained inelastic energy deposition for individual collision processes. The estimated energy deposition is found to have a simple correlation with the experimentally determined values of λ(loss).

  20. Raman spectroscopic investigations of swift heavy ion irradiation effects in single-walled carbon nanotubes

    International Nuclear Information System (INIS)

    Olejniczak, A.; Skuratov, V.A.; Lukaszewicz, J.P.

    2013-01-01

    In this study, we report the results on swift heavy ion irradiation effects in single-walled carbon nanotubes (SWNTs). Buckypapers, prepared of CVD grown, SWNTs were irradiated at room temperature with 167 MeV Xe ions to fluences in the range of 6×10 11 - 6.5×10 13 cm -2 and investigated using Raman spectroscopy. We observed a rich set of features in the intermediate frequency mode region. Some of them, being defect-induced, resembled fairly well the phonon density of states (DOS) of nanocrystalline glassy carbon. Analysis of the RBM modes has shown that the broader metallic tubes are characterized by higher radiation stability than thinner semiconducting ones. (authors)

  1. Optical waveguides in LiTaO3 crystals fabricated by swift C5+ ion irradiation

    International Nuclear Information System (INIS)

    Liu, Guiyuan; He, Ruiyun; Akhmadaliev, Shavkat; Vázquez de Aldana, Javier R.; Zhou, Shengqiang; Chen, Feng

    2014-01-01

    We report on the optical waveguides, in both planar and ridge configurations, fabricated in LiTaO 3 crystal by using carbon (C 5+ ) ions irradiation at energy of 15 MeV. The planar waveguide was produced by direct irradiation of swift C 5+ ions, whilst the ridge waveguides were manufactured by using femtosecond laser ablation of the planar layer. The reconstructed refractive index profile of the planar waveguide has showed a barrier-shaped distribution, and the near-field waveguide mode intensity distribution was in good agreement with the calculated modal profile. After thermal annealing at 260 °C in air, the propagation losses of both the planar and ridge waveguides were reduced to 10 dB/cm

  2. Interdiffusion and grain-boundary migration in Au-Cu bilayers during ion-irradiation

    International Nuclear Information System (INIS)

    Alexander, D.E.; Rehn, L.E.; Baldo, P.M.

    1991-11-01

    Ion irradiation and annealing experiments have been conducted on Au/Cu bilayer films to evaluate the effect of irradiation on diffusion-induced grain boundary migration (DIGM). The Au films were prepared with a large-grained microstructure with grain boundaries perpendicular to the film surface and extending through the film thickness. Irradiations were conducted with 1.5 MeV Kr at 228 degree C. Rutherford backscattering spectrometry of the samples revealed that interdiffusion was substantially enhanced in the irradiated area relative to the unirradiated area. Both irradiated and annealed-only areas were characterized by a nearly uniform composition of 14 at.% and 7 at.% Cu respectively through the entire thickness of the underlying Au film. Small probe X-ray energy dispersive spectroscopy showed significant lateral compositional homogeneities in both irradiated and annealed areas. These two results are consistent with previous observations of DIGM in the Au/Cu system, suggesting that this previously unexamined mechanism contributes to ion beam mixing

  3. Generation of amorphous surface layers in LiNbO3 by ion-beam irradiation: thresholding and boundary propagation

    International Nuclear Information System (INIS)

    Olivares, J.; Garcia, G.; Agullo-Lopez, F.; Agullo-Rueda, F.; Kling, A.; Soares, J.C.

    2005-01-01

    The refractive-index profiles induced by high-energy (5 MeV, 7.5 MeV) silicon irradiation in LiNbO 3 have been systematically determined as a function of ion fluence in the range 10 13 -10 15 cm -2 . At variance with irradiations at lower energies, an optically isotropic ('amorphous') homogeneous surface layer is generated whose thickness increases with fluence. These results have been associated with an electronic excitation mechanism. They are discussed in relation to the well-documented phenomenon of latent (amorphous) track generation under ion irradiation, requiring a threshold value S e,th for the electronic stopping power S e . Our optical data have yielded a value of ∼5 keV/nm for such a threshold, within the range reported by independent single-track measurements. The propagation of the amorphous boundary into the crystal during irradiation indicates that the threshold value decreases on increasing the fluence. Complementary Rutherford backscattering-channeling and micro-Raman (on samples irradiated at 30 MeV) experiments have been performed to monitor the induced structural changes. (orig.)

  4. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

    International Nuclear Information System (INIS)

    Kaushik, Priya Darshni; Ivanov, Ivan G.; Lin, Pin-Cheng; Kaur, Gurpreet; Eriksson, Jens; Lakshmi, G.B.V.S.; Avasthi, D.K.; Gupta, Vinay; Aziz, Anver; Siddiqui, Azher M.; Syväjärvi, Mikael; Yazdi, G. Reza

    2017-01-01

    Highlights: • For the first time the gas sensing application of SHI irradiated epitaxial graphene on SiC is explored. • Surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles. • Existence of an optimal fluence which maximize the gas sensing response towards NO_2 and NH_3 gases. - Abstract: In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 10"1"3 ions/cm"2). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and spintronic

  5. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

    Energy Technology Data Exchange (ETDEWEB)

    Kaushik, Priya Darshni, E-mail: kaushik.priyadarshni@gmail.com [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Department of Physics, Jamia Millia Islamia, New Delhi, 110025 (India); Ivanov, Ivan G.; Lin, Pin-Cheng [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Kaur, Gurpreet [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Eriksson, Jens [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Lakshmi, G.B.V.S. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067 (India); Avasthi, D.K. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067 (India); Amity Institute of Nanotechnology, Noida 201313 (India); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Aziz, Anver; Siddiqui, Azher M. [Department of Physics, Jamia Millia Islamia, New Delhi, 110025 (India); Syväjärvi, Mikael [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Yazdi, G. Reza, E-mail: yazdi@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden)

    2017-05-01

    Highlights: • For the first time the gas sensing application of SHI irradiated epitaxial graphene on SiC is explored. • Surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles. • Existence of an optimal fluence which maximize the gas sensing response towards NO{sub 2} and NH{sub 3} gases. - Abstract: In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 10{sup 13} ions/cm{sup 2}). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and

  6. Study of irradiation induced defects and phase instability in β phase of Zr Excel alloy with in-situ heavy ion irradiation

    International Nuclear Information System (INIS)

    Yu, H.; Yao, Z.; Kirk, M.A.; Daymond, M.R.

    2015-01-01

    In situ heavy ion irradiation with 1 MeV Kr"2"+ was carried out to study irradiation induced phase change and atomic lattice defects in theβ phase of Zr Excel alloy. No decomposition of β-Zr was observed under irradiation at either 200 "oC or 450 "oC. However, ω-Zr particles experienced shape change and shrinkage associated enrichment of Fe in the β/ω interface at 200 "oC irradiation but not at 450 "oC. The defect evolution in the β-phase was examined with single phase Zr-20Nb alloy. It was found that dislocation loops with Burgers vector 1/2 and both present in β-Zr under room temperature irradiation. (author)

  7. Study of irradiation induced defects and phase instability in β phase of Zr Excel alloy with in-situ heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Yu, H.; Yao, Z., E-mail: 12hy1@queensu.ca [Queen' s University, Department of Mechanical and Materials Engineering, Kingston, ON (Canada); Kirk, M.A. [Argonne National Laboratory, Materials Science Division, Argonne, IL (United States); Daymond, M.R. [Queen' s University, Department of Mechanical and Materials Engineering, Kingston, ON (Canada)

    2015-07-01

    In situ heavy ion irradiation with 1 MeV Kr{sup 2+} was carried out to study irradiation induced phase change and atomic lattice defects in theβ phase of Zr Excel alloy. No decomposition of β-Zr was observed under irradiation at either 200 {sup o}C or 450 {sup o}C. However, ω-Zr particles experienced shape change and shrinkage associated enrichment of Fe in the β/ω interface at 200 {sup o}C irradiation but not at 450 {sup o}C. The defect evolution in the β-phase was examined with single phase Zr-20Nb alloy. It was found that dislocation loops with Burgers vector 1/2<111> and <001> both present in β-Zr under room temperature irradiation. (author)

  8. Quartz modification by Zn ion implantation and swift Xe ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Privezentsev, Vladimir [Institute of Physics and Technology, Russian Academy of Sciences, Moscow (Russian Federation); Kulikauskas, Vaclav [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University (Russian Federation); Didyk, Alexander; Skuratov, Vladimir [Joint Institute of Nuclear Research, Dubna (Russian Federation); Steinman, Edward; Tereshchenko, Alexey; Kolesnikov, Nikolay [Institute of Solid-State Physics, Russian Academy of Sciences, Chernogolovka (Russian Federation); Trifonov, Alexey; Sakharov, Oleg [National Research University ' ' MIET' ' , Zelenograd, Moscow (Russian Federation); Ksenich, Sergey [National University of Science and Technology ' ' MISiS' ' , Moscow (Russian Federation)

    2017-07-15

    The quartz slides were implanted by {sup 64}Zn{sup +} ions with dose of 5 x 10{sup 16}/cm{sup 2} and energy of 100 keV. After implantation, the amorphous metallic Zn nanoparticles with an average radius of 3.5 nm were created. The sample surface becomes nonuniform, its roughness is increased and its values rise up to 6 nm compared to virgin state, and the roughness maximum is at a value of about 0.8 nm. The surface is made up of valleys and hillocks which have a round shape with an average diameter about 200 nm. At the center of these hillocks are pores with a depth up to 6 nm and a diameter of about 20 nm. After implantation in UV-vis diapason, the optical transmission decreases while PL peak (apparently due to oxygen deficient centers) at wavelength of 400 nm increases. Then the samples were subjected to swift Xe ion irradiation with the fluences of 1 x 10{sup 12}-7.5 x 10{sup 14}/cm{sup 2} and energy of 167 MeV. After Xe irradiation, the sample surface roughness shat down to values of 0.5 nm and the roughness maximum is at a value of about 0.1 nm. Optical transmission in UV-vis diapason increases. The PL peak at wavelength of 400 nm is decreased while a PL peak at wavelength of 660 nm is raised. This peak is presumably due to non-bridging oxygen hole centers or/and NPs with structure Si(core)/SiO{sub 2}(shell). HRTEM image of Zn-implanted quartz subsurface layer. One can see the Zn amorphous nanoparticles, which confirms the electron diffraction pattern (insert). (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Dosimetric evaluation of multi-sided irradiation on HDPE pipes under 2 MeV electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Benny, P.G., E-mail: bennypg@yahoo.com; Khader, S.A.; Sarma, K.S.S.

    2014-03-01

    The use of electron beam technology has enabled the production of heat resistant pipe for hot water circulation. One of the difficulties in the irradiation of pipe products is the uneven penetration of electrons. Quality of the radiation process depends on radiation dose and homogeneity of the dose distribution, which becomes a major concern when treatments of circular objects like pipes are performed. One method to achieve uniformity in the absorbed dose in the product is to use multi-sided irradiation. The paper discusses the importance of dosimetry mapping in industrial electron beam radiation processing and outlines the challenges in delivering a uniform dose to cylindrical objects. In this study, HDPE pipe of 5 mm thickness of homogeneous material (40 mm outer diameter and 30 mm inner diameter) has been chosen for multi-sided irradiation under 2 MeV scanned electron beam from the ILU-6 accelerator. - Highlights: • The paper outlines the challenges in delivering uniform dose to cylindrical objects at 2 MeV industrial electron beam facility. • HDPE pipe of 40 mm outer diameter and 30 mm inner diameter has been chosen for the study. • The circumferential dose distribution inside and outside of the pipes were evaluated by using calibrated CTA dosimeter strips. • Using stack of dosimeter strips, changes in circumferential dose distribution in the annular region of the pipe was evaluated. • Optimization of multi-sided irradiation on the HDPE pipes for better dose homogeneity is reported in the paper.

  10. Dosimetric evaluation of multi-sided irradiation on HDPE pipes under 2 MeV electron beam

    International Nuclear Information System (INIS)

    Benny, P.G.; Khader, S.A.; Sarma, K.S.S.

    2014-01-01

    The use of electron beam technology has enabled the production of heat resistant pipe for hot water circulation. One of the difficulties in the irradiation of pipe products is the uneven penetration of electrons. Quality of the radiation process depends on radiation dose and homogeneity of the dose distribution, which becomes a major concern when treatments of circular objects like pipes are performed. One method to achieve uniformity in the absorbed dose in the product is to use multi-sided irradiation. The paper discusses the importance of dosimetry mapping in industrial electron beam radiation processing and outlines the challenges in delivering a uniform dose to cylindrical objects. In this study, HDPE pipe of 5 mm thickness of homogeneous material (40 mm outer diameter and 30 mm inner diameter) has been chosen for multi-sided irradiation under 2 MeV scanned electron beam from the ILU-6 accelerator. - Highlights: • The paper outlines the challenges in delivering uniform dose to cylindrical objects at 2 MeV industrial electron beam facility. • HDPE pipe of 40 mm outer diameter and 30 mm inner diameter has been chosen for the study. • The circumferential dose distribution inside and outside of the pipes were evaluated by using calibrated CTA dosimeter strips. • Using stack of dosimeter strips, changes in circumferential dose distribution in the annular region of the pipe was evaluated. • Optimization of multi-sided irradiation on the HDPE pipes for better dose homogeneity is reported in the paper

  11. Stereophotogrammetric study of surface topography in ion irradiated silver

    International Nuclear Information System (INIS)

    Sokolov, V.N.; Fayazov, I.M.

    1993-01-01

    The irradiated surface topography of polycrystalline silver was studied using the stereophotogrammetric method. The surface of silver was irradiated with 30 keV argon ions at variation for the ion incidence angle in interval of 0-80 deg relative to a surface normal. The influence of the inclination angle of the sample in the SEM on the cone shape of a SEM-picture of the irradiated surface is discussed. The parameters of cones on the irradiated surface of silver were measured by the SEM-stereomethod. The measurements of the sample section perpendicular to the incidence plane are also carried out

  12. Charge-state distribution in close collisions of 3 MeV C2+ ions with Ag and Au atoms

    NARCIS (Netherlands)

    Boerma, D.O; Arnoldbik, W.M.; Kabachnik, N.M.; Khodyrev, V.A.

    The charge-state distributions of 3 MeV carbon ions scattered over angles of 40 degrees and 60 degrees from sub-monolayers of Ag and Au atoms evaporated on a substrate and from thick layers of Ag and Au have been measured. A close similarity of the charge distributions in all cases is interpreted as

  13. Generation of colour centres in yttria-stabilized zirconia by heavy ion irradiations in the GeV range

    International Nuclear Information System (INIS)

    Costantini, Jean-Marc; Beuneu, Francois; Schwartz, Kurt; Trautmann, Christina

    2010-01-01

    We have studied the colour centre production in yttria-stabilized zirconia (ZrO 2 :Y 3+ ) by heavy ion irradiation in the GeV range using on-line UV-visible optical absorption spectroscopy. Experiments were performed with 11.4 MeV amu -1 127 Xe, 197 Au, 208 Pb and 238 U ion irradiations at 8 K or room temperature (RT). A broad and asymmetrical absorption band peaked at a wavelength about 500 nm is recorded regardless of the irradiation parameters, in agreement with previous RT irradiations with heavy ions in the 100 MeV range. This band is de-convoluted into two broad Gaussian-shaped bands centred at photon energies about 2.4 and 3.1 eV that are respectively associated with the F + -type centres (involving a singly ionized oxygen vacancy, V O · ) and T centres (i.e. Zr 3+ in a trigonal symmetry) observed by electron paramagnetic resonance (EPR) spectroscopy. In the case of 8 K Au ion irradiation at low fluences, six bands are used at about 1.9, 2.3, 2.7, 3.1 and 4.0 eV. The three bands near 2.0-2.5 eV can be assigned to oxygen divacancies (i.e. F 2 + centres). No significant effect of the irradiation temperature is found on the widths of all absorption bands for the same ion and fluence. This is attributed to the inhomogeneous broadening arising from the static disorder due to the native charge-compensating oxygen vacancies. However, the colour centre production yield is strongly enhanced at 8 K with respect to RT. When heating irradiated samples from 8 K to RT, the extra colour centres produced at low temperature do not recover completely to the level of RT irradiation. The latter results are accounted for by an electronically driven defect recovery process.

  14. Raman investigation of lattice defects and stress induced in InP and GaN films by swift heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Hu, P.P. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); University of Chinese Academy of Sciences (UCAS), Beijing 100049 (China); Liu, J., E-mail: J.Liu@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); Zhang, S.X. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); University of Chinese Academy of Sciences (UCAS), Beijing 100049 (China); Maaz, K. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); Nanomaterials Research Group, Physics Division, PINSTECH, Nilore, 45650 Islamabad (Pakistan); Zeng, J. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); Guo, H. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); University of Chinese Academy of Sciences (UCAS), Beijing 100049 (China); Zhai, P.F.; Duan, J.L.; Sun, Y.M.; Hou, M.D. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China)

    2016-04-01

    InP crystals and GaN films were irradiated by swift heavy ions {sup 86}Kr and {sup 209}Bi with kinetic energies of 25 and 9.5 MeV per nucleon and ion fluence in the range 5 × 10{sup 10} to 3.6 × 10{sup 12} ions/cm{sup 2}. The characteristic optical bands were studied by Raman spectroscopy to reveal the disorder and defects induced in the samples during the irradiation process. The crystallinity of InP and GaN was found to be deteriorated after irradiation by the swift heavy ions and resulted in the amorphous nature of the samples along the ion tracks. The amorphous tracks observed by transmission electron microscopy (TEM) images confirmed the formation of lattice defects. In typical F{sub 2}(LO) mode, in case of InP, the spectra shifted towards the lower wavenumbers with a maximum shift of 7.6 cm{sup −1} induced by 1030 MeV Bi ion irradiation. While in case of GaN, the typical E{sub 2}(high) mode shifted towards the higher wavenumbers, with maximum shift of 5.4 cm{sup −1} induced by 760 MeV Bi ion irradiation at ion fluence of 1 × 10{sup 12} ions/cm{sup 2}. The observed Raman shifts reveal the presence of lattice defects and disorder induced in the samples after irradiation by the swift heavy ions. This irradiation also generated lattice stress in the samples, which has been investigated and discussed in detail in this work.

  15. Development of a single ion micro-irradiation facility for experimental radiobiology at cell level; Developpement d'une ligne d'irradiation microfaisceau en mode ion par ion pour la radiobiologie experimentale a l'echelle cellulaire

    Energy Technology Data Exchange (ETDEWEB)

    Barberet, Ph

    2003-10-01

    A micro-irradiation device has been developed for radiobiology applications at the scale of the cell. This device is based on an upgrade of an existing micro-beam line that was already able to deliver a 1 to 3 MeV proton or alpha beam of low intensity and whose space resolution is lower than 1 micrometer in vacuum. The important part of this work has been the development of an irradiation stage designed to fit on the micro-probe and able to deliver ions in the air with an absolute accuracy of a few micrometers. A program has been set up to monitor the complete irradiation line in testing and in automatic irradiation operating phases. Simulation tools based on Monte-Carlo calculations have been validated through comparisons with experimental data particularly in the field of spatial resolution and of the number of ions delivered. The promising results show the possibility in a near future to use this tool to study the response of cells to very low irradiation doses down to the extreme limit of one ion per cell.

  16. Conceptual study of a heavy-ion-ERDA spectrometer for energies below 6 MeV

    Science.gov (United States)

    Julin, Jaakko; Sajavaara, Timo

    2017-09-01

    Elastic recoil detection analysis (ERDA) is a well established technique and it offers unique capabilities in thin film analysis. Simultaneous detection and depth profiling of all elements, including hydrogen, is possible only with time-of-flight ERDA. Bragg ionization chambers or ΔE - E detectors can also be used to identify the recoiling element if sufficiently high energies are used. The chief limitations of time-of-flight ERDA are the beam induced sample damage and the requirement of a relatively large accelerator. In this paper we propose a detector setup, which could be used with 3 MeV to 6 MeV medium heavy beams from either a single ended accelerator (40Ar) or from a tandem accelerator (39K). The detector setup consists of two timing detectors and a gas ionization chamber energy detector. Compared to use of very heavy low energy ions the hydrogen recoils with this beam have sufficient energy to be detected with current gas ionization chamber energy detector. To reduce the beam induced damage the proposed detector setup covers a solid angle larger than 1 msr, roughly an order of magnitude improvement over most time-of-flight ERDA setups. The setup could be used together with a small accelerator to be used for light element analysis of approximately 50 nm films. The concept is tested with 39K beam from a 1.7 MV Pelletron tandem accelerator with the Jyväskylä ToF-ERDA setup. In addition to the measurements effects related to low energies and increase in the solid angle are simulated with Monte Carlo methods.

  17. In vivo skin leptin modulation after 14 MeV neutron irradiation: a molecular and FT-IR spectroscopic study

    Energy Technology Data Exchange (ETDEWEB)

    Cestelli Guidi, M.; Mirri, C.; Marcelli, A. [Laboratori Nazionali di Frascati - INFN, Frascati, Rome (Italy); Fratini, E.; Amendola, R. [ENEA, UT BIORAD-RAB, Rome (Italy); Licursi, V.; Negri, R. [Universita La Sapienza, Dip. Biologia e Biotecnologie ' ' Charles Darwin' ' , Rome (Italy)

    2012-09-15

    This paper discusses gene expression changes in the skin of mice treated by monoenergetic 14 MeV neutron irradiation and the possibility of monitoring the resultant lipid depletion (cross-validated by functional genomic analysis) as a marker of radiation exposure by high-resolution FT-IR (Fourier transform infrared) imaging spectroscopy. The irradiation was performed at the ENEA Frascati Neutron Generator (FNG), which is specifically dedicated to biological samples. FNG is a linear electrostatic accelerator that produces up to 1.0 x 10{sup 11} 14-MeV neutrons per second via the D-T nuclear reaction. The functional genomic approach was applied to four animals for each experimental condition (unirradiated, 0.2 Gy irradiation, or 1 Gy irradiation) 6 hours or 24 hours after exposure. Coregulation of a subclass of keratin and keratin-associated protein genes that are physically clustered in the mouse genome and functionally related to skin and hair follicle proliferation and differentiation was observed. Most of these genes are transiently upregulated at 6 h after the delivery of the lower dose delivered, and drastically downregulated at 24 h after the delivery of the dose of 1 Gy. In contrast, the gene coding for the leptin protein was consistently upregulated upon irradiation with both doses. Leptin is a key protein that regulates lipid accumulation in tissues, and its absence provokes obesity. The tissue analysis was performed by monitoring the accumulation and the distribution of skin lipids using FT-IR imaging spectroscopy. The overall picture indicates the differential modulation of key genes during epidermis homeostasis that leads to the activation of a self-renewal process at low doses of irradiation. (orig.)

  18. In vivo skin leptin modulation after 14 MeV neutron irradiation: a molecular and FT-IR spectroscopic study.

    Science.gov (United States)

    Cestelli Guidi, M; Mirri, C; Fratini, E; Licursi, V; Negri, R; Marcelli, A; Amendola, R

    2012-09-01

    This paper discusses gene expression changes in the skin of mice treated by monoenergetic 14 MeV neutron irradiation and the possibility of monitoring the resultant lipid depletion (cross-validated by functional genomic analysis) as a marker of radiation exposure by high-resolution FT-IR (Fourier transform infrared) imaging spectroscopy. The irradiation was performed at the ENEA Frascati Neutron Generator (FNG), which is specifically dedicated to biological samples. FNG is a linear electrostatic accelerator that produces up to 1.0 × 10(11) 14-MeV neutrons per second via the D-T nuclear reaction. The functional genomic approach was applied to four animals for each experimental condition (unirradiated, 0.2 Gy irradiation, or 1 Gy irradiation) 6 hours or 24 hours after exposure. Coregulation of a subclass of keratin and keratin-associated protein genes that are physically clustered in the mouse genome and functionally related to skin and hair follicle proliferation and differentiation was observed. Most of these genes are transiently upregulated at 6 h after the delivery of the lower dose delivered, and drastically downregulated at 24 h after the delivery of the dose of 1 Gy. In contrast, the gene coding for the leptin protein was consistently upregulated upon irradiation with both doses. Leptin is a key protein that regulates lipid accumulation in tissues, and its absence provokes obesity. The tissue analysis was performed by monitoring the accumulation and the distribution of skin lipids using FT-IR imaging spectroscopy. The overall picture indicates the differential modulation of key genes during epidermis homeostasis that leads to the activation of a self-renewal process at low doses of irradiation.

  19. Ion beam synthesis of IrSi3 by implantation of 2 MeV Ir ions

    International Nuclear Information System (INIS)

    Sjoreen, T.P.; Chisholm, M.F.; Hinneberg, H.J.

    1992-11-01

    Formation of a buried IrSi 3 layer in (111) oriented Si by ion implantation and annealing has been studied at an implantation energy of 2 MeV for substrate temperatures of 450--550C. Rutherford backscattering (RBS), ion channeling and cross-sectional transmission electron microscopy showed that a buried epitaxial IrSi 3 layer is produced at 550C by implanting ≥ 3.4 x 10 17 Ir/cm 2 and subsequently annealing for 1 h at 1000C plus 5 h at 1100C. At a dose of 3.4 x 10 17 Ir/cm 2 , the thickness of the layer varied between 120 and 190 nm and many large IrSi 3 precipitates were present above and below the film. Increasing the dose to 4.4 x 10 17 Ir/cm 2 improved the layer uniformity at the expense of increased lattice damage in the overlying Si. RBS analysis of layer formation as a function of substrate temperature revealed the competition between the mechanisms for optimizing surface crystallinity vs. IrSi 3 layer formation. Little apparent substrate temperature dependence was evident in the as-implanted state but after annealing the crystallinity of the top Si layer was observed to deteriorate with increasing substrate temperature while the precipitate coarsening and coalescence improved

  20. Enhancement of metal-nanoparticle precipitation by co-irradiation of high-energy heavy ions and laser in silica glass

    International Nuclear Information System (INIS)

    Okubo, N.; Umeda, N.; Takeda, Y.; Kishimoto, N.

    2003-01-01

    Simultaneous laser irradiation under ion irradiation is conducted to control nanoparticle precipitation in amorphous (a-)SiO 2 . Copper ions of 3 MeV and photons of 532 nm by Nd:YAG laser are irradiated to substrates of a-SiO 2 . The ion dose rate and total dose are set at 2-10 μA/cm 2 and 3.0 x 10 16 -3.0 x 10 17 ions/cm 2 , respectively, and the laser power density is 0.05-0.2 J/cm 2 pulse at 10 Hz. The laser is simultaneously irradiated with ions in the co-irradiation mode, and the result is compared to that in the sequential and ion-only irradiation. Cross-sectional TEM of the irradiated specimens is conducted after measuring optical absorption spectra. In the case of co-irradiation of intense laser power and high dose (0.2 J/cm 2 pulse and 3.0 x 10 17 ions/cm 2 ), Cu nanoparticles precipitate much more extensively than in the sequential irradiation, increasing both the particle diameter and the total Cu atoms in the nanoparticles. The optical absorption spectra show a surface plasmon peak of the nanoparticles. The precipitation enhancement in the co-irradiation mode suggests that the electronic energy is absorbed by the dynamic electronic states and promotes the Cu precipitation via enhancing the atomic migration

  1. Whiskers growth and self-healing in Ti-based metallic glasses during ion irradiation

    Science.gov (United States)

    Zhang, Kun; Hu, Zheng; Zhao, Ziqiang; Wei, Bingchen; Li, Yansen; Wei, Yuhang

    2018-04-01

    Ti-based metallic glasses were subjected to a 20 MeV Cl4+ ion radiation under liquid-nitrogen cooling. Their responses, as well as effects of the electronic excitation and nucleus-nucleus collision were evaluated. The collision cascade during irradiation typically changes the structure by increasing the liquid-like zone/cluster, or the content of the free volume. However, along the ion incident depth, the structure change is inhomogeneous. Numerous whiskers appear and aggregate on the side of the irradiation surface, which are several micrometers away from the edge. This corresponds with the maximum collision depth obtained by the Monte Carlo simulation, where nuclear loss plays a dominant role. Moreover, the liquid-like zone continually forms, which add to the whiskers growth and subsequent self-healing. Results suggest that the irradiation-induced local shear stress combines with the well-localized liquid-like zone results in the observed phenomena. This study demonstrates that metallic glasses have high morphological instability under ion irradiation, which assets can pave new paths for their further applications.

  2. Evaluation of cell behavior on modified polypropylene with swift heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Arbeitman, Claudia R., E-mail: arbeitman@tandar.cnea.gov.ar [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA, Av. Gral. Paz 1499, 1650 San Martin, Bs. As. (Argentina); CONICET, Av. Rivadavia 1917, C1033AAJ, CABA (Argentina); Ibanez, Irene L. [CONICET, Av. Rivadavia 1917, C1033AAJ, CABA (Argentina); Garcia Bermudez, Gerardo [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA, Av. Gral. Paz 1499, 1650 San Martin, Bs. As. (Argentina); CONICET, Av. Rivadavia 1917, C1033AAJ, CABA (Argentina); Duran, Hebe [CONICET, Av. Rivadavia 1917, C1033AAJ, CABA (Argentina); Gerencia de Desarrollo Tecnologico y Proyectos Especiales, TANDAR-CNEA (Argentina); Grosso, Mariela F. del [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA, Av. Gral. Paz 1499, 1650 San Martin, Bs. As. (Argentina); CONICET, Av. Rivadavia 1917, C1033AAJ, CABA (Argentina); Salguero, Noelia [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA, Av. Gral. Paz 1499, 1650 San Martin, Bs. As. (Argentina); Mazzei, Ruben [U.A. Tecnologicas y Agropecuarias, CNEA (Argentina)

    2012-02-15

    Ion beam irradiation is a well known means to change the physico-chemical properties of polymers, and induced bio and citocompatibility in controlled conditions and in selected areas of surface. However, the enhancement of cell adhesion on a modified substrate does not mean that the surface is adequate for functional cells. The purpose of the present work is to study proliferation, changes in cytoskeleton and cell morphology on substrates as a function of irradiation parameters. We irradiated polypropylene with sulfur (S) ion-beam at energies of 110 MeV with fluences between 1 Multiplication-Sign 10{sup 6} and 2 Multiplication-Sign 10{sup 10} ions cm{sup -2}. NIH 3T3 cells were cultured on each sample. Cell morphology was observed using phase contrast microscopy and cytoskeleton proteins with fluorescence microscopy. The analysis show different cellular responses as a functions of irradiation parameter, strongly suggests that different underlying substratum can result in distinct types of cytoskeleton reorganization.

  3. POLYMERS CONTAINING Cu NANOPARTICLES IRRADIATED BY LASER TO ENHANCE THE ION ACCELERATION

    Directory of Open Access Journals (Sweden)

    Mariapompea Cutroneo

    2015-06-01

    Full Text Available Target Normal Sheath Acceleration method was employed at PALS to accelerate ions from laser-generated plasma at intensities above 1015 W/cm2. Laser parameters, irradiation conditions and target geometry and composition control the plasma properties and the electric field driving the ion acceleration. Cu nanoparticles deposited on the polymer promote resonant absorption effects increasing the plasma electron density and enhancing the proton acceleration. Protons can be accelerated in forward direction at kinetic energies up to about 3.5 MeV. The optimal target thickness, the maximum acceleration energy and the angular distribution of emitted particles have been measured using ion collectors, X-ray CCD streak camera, SiC detectors and Thomson Parabola Spectrometer.

  4. Progress and tendency in heavy ion irradiation mutation breeding

    International Nuclear Information System (INIS)

    Zhou Libin; Li Wenjian; Qu Ying; Li Ping

    2008-01-01

    In recent years, the intermediate energy heavy ion biology has been concerned rarely comparing to that of the low-energy ions. In this paper, we summarized the advantage of a new mutation breeding method mediated by intermediate energy heavy ion irradiations. Meanwhile, the present state of this mutation technique in applications of the breeding in grain crops, cash crops and model plants were introduced. And the preview of the heavy ion irradiations in gene-transfer, molecular marker assisted selection and spaceflight mutation breeding operations were also presented. (authors)

  5. Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

    Energy Technology Data Exchange (ETDEWEB)

    Dang, Z. Y.; Breese, M. B. H. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore Singapore 117542 (Singapore); Lin, Y.; Tok, E. S. [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Vittone, E. [Physics Department, NIS Excellence Centre and CNISM, University of Torino, via Pietro Giuria 1, 10125 Torino (Italy)

    2014-05-12

    A tailored distribution of ion induced defects in p-type silicon allows subsequent electrochemical anodization to be modified in various ways. Here we describe how a low level of lattice amorphization induced by ion irradiation influences anodization. First, it superposes a chemical etching effect, which is observable at high fluences as a reduced height of a micromachined component. Second, at lower fluences, it greatly enhances electrochemical anodization by allowing a hole diffusion current to flow to the exposed surface. We present an anodization model, which explains all observed effects produced by light ions such as helium and heavy ions such as cesium over a wide range of fluences and irradiation geometries.

  6. Temperature and ion-mass dependence of amorphization dose for ion beam irradiated zircon (ZrSiO4)

    International Nuclear Information System (INIS)

    Wang, L.M.; Ewing, R.C.; Eby, R.K.

    1992-12-01

    The temperature dependence of amorphization dose for zircon under 1.5 MeV Kr ion irradiation has been investigated using the ANL HVEM-Tandem Facility. Three regimes were observed in the amorphization dose-temperature curve. In the first regime (15 to 300 K), the critical amorphization dose increased from 3.06 to 4.5 ions/nm 2 . In the second regime (300 to 473 K), there is little change in the amorphizationdose. In the third regime (> 473 K), the amorphization dose increased exponentially to 8.3 ions/nm 2 at 913 K. This temperature dependence of amorphization dose can be described by two processes with different activation energies (0.018 and 0.31 eV respectively) which are attributed to close pair recombination in the cascades at low temperatures and radiation-enhanced epitaxial recrystallization at higher temperatures. The upper temperature limit for amorphization of zircon is estimated to be 1100 K. The ion-mass dependence of the amorphization dose (in dpa) has also been discussed in terms of the energy to recoils based on data obtained from He, Ne, Ar, Kr, Xe irradiations and a 238 Pu-doped sample

  7. Swift heavy ion irradiation of CaF2 - from grooves to hillocks in a single ion track

    Science.gov (United States)

    Gruber, Elisabeth; Salou, Pierre; Bergen, Lorenz; El Kharrazi, Mourad; Lattouf, Elie; Grygiel, Clara; Wang, Yuyu; Benyagoub, Abdenacer; Levavasseur, Delphine; Rangama, Jimmy; Lebius, Henning; Ban-d'Etat, Brigitte; Schleberger, Marika; Aumayr, Friedrich

    2016-10-01

    A novel form of ion-tracks, namely nanogrooves and hillocks, are observed on CaF2 after irradiation with xenon and lead ions of about 100 MeV kinetic energy. The irradiation is performed under grazing incidence (0.3°-3°) which forces the track to a region in close vicinity to the surface. Atomic force microscopy imaging of the impact sites with high spatial resolution reveals that the surface track consists in fact of three distinct parts: each swift heavy ion impacting on the CaF2 surface first opens a several 100 nm long groove bordered by a series of nanohillocks on both sides. The end of the groove is marked by a huge single hillock and the further penetration of the swift projectile into deeper layers of the target is accompanied by a single protrusion of several 100 nm in length slowly fading until the track vanishes. By comparing experimental data for various impact angles with results of a simulation, based on a three-dimensional version of the two-temperature-model (TTM), we are able to link the crater and hillock formation to sublimation and melting processes of CaF2 due to the local energy deposition by swift heavy ions.

  8. X-ray diffraction studies of 145MeV proton-irradiated AlBeMet 162

    Directory of Open Access Journals (Sweden)

    Mohamed Elbakhshwan

    2016-08-01

    Full Text Available AlBeMet 162 (Materion Co., formerly Brush Wellman has been irradiated with 145MeV protons up to 1.2×1020cm−2 fluence, with irradiation temperatures in the range of 100–220°C. Macroscopic post-irradiation evaluation on the evolution of mechanical and thermal properties was integrated with a comprehensive X-ray- diffraction study using high-energy monochromatic and polychromatic X-ray beams, which offered a microscopic view of the irradiation damage effects on AlBeMet. The study confirmed the stability of the metal–matrix composite, its resistance to proton damage, and the continuing separation of the two distinct phases, fcc aluminum and hcp beryllium, following irradiation. Furthermore, based on the absence of inter-planar distance change during proton irradiation, it was confirmed that the stacking faults and clusters on the Al (111 planes are stable, and thus can migrate from the cascade region and be absorbed at various sinks. XRD analysis of the unirradiated AlBeMet 162 showed clear change in the texture of the fcc phase with orientation especially in the Al (111 reflection which exhibits a “non-perfect” six-fold symmetry, implying lack of isotropy in the composite.

  9. Electrical behaviour of butyl acrylate/methyl methacrylate copolymer films irradiated with 1.5 MeV electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Radwan, R.M. [Radiation Physics Department, National Center for Radiation Research and Technology (NCRRT), Atomic Energy Authority (AEA), P. O. Box 29, Nasr City, Cairo (Egypt)], E-mail: redaradwan_2000@yahoo.com; Fawzy, Y.H.A. [Radiation Physics Department, National Center for Radiation Research and Technology (NCRRT), Atomic Energy Authority (AEA), P. O. Box 29, Nasr City, Cairo (Egypt); El-Hag Ali, A. [Polymer Chemistry Department, National Center for Radiation Research and Technology (NCRRT), Atomic Energy Authority (AEA), P. O. Box 29, Nasr City, Cairo (Egypt)

    2008-02-15

    Electrical conductivity and dielectric parameters of the (BuA/MMA) copolymer films irradiated with 1.5 MeV electron beam (EB) have been studied. The samples were irradiated with different doses of the electron beam: 5, 10, 50, 125 and 200 kGy. The electrical conductivity of the samples was found to decrease as the irradiation dose increases. The temperature dependence of the direct current (dc) conductivity for unirradiated and irradiated samples has been obtained over a temperature range from 293 to 373 K. The activation energy values were calculated for all samples. Moreover, measurements of the dielectric constant, dielectric loss and alternating current (ac) conductivity were performed at a frequency range from 100 Hz to 5 MHz at room temperature. The results indicated that the EB irradiation has formed some traps in the energy gap, which reduce the movement of the charge carriers. Furthermore, a direct proportional relationship between the activation energy and the irradiation dose was estimated in two regions: below and above the glass transition temperature of the polymer. Dipole relaxation was observed in the samples, and the dose effect was found to shift this relaxation towards higher frequencies.

  10. Evidence of amorphisation of B{sub 4}C boron carbide under slow, heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Gosset, D., E-mail: dominique.gosset@cea.fr [CEA, DEN, DMN-SRMA-LA2M, F-91191 Gif/Yvette (France); Miro, S. [CEA, DEN, DMN-SRMP-JANNUS, F-91191 Gif/Yvette (France); Doriot, S. [CEA, DEN, DMN-SRMA-LA2M, F-91191 Gif/Yvette (France); Victor, G. [CNRS-IN2P3-IPNL, F-69622 Villeurbanne (France); Motte, V. [CEA, DEN, DMN-SRMA-LA2M, F-91191 Gif/Yvette (France)

    2015-12-15

    Boron carbide is widely used either as armor-plate or neutron absorber. In both cases, a good structural stability is required. However, a few studies have shown amorphisation may occur in severe conditions. Hard impacts lead to the formation of amorphous bands. Some irradiations in electronic regime with H or He ions have also shown amorphisation of the material. Most authors however consider the structure is not drastically affected by irradiations in the ballistic regime. Here, we have irradiated at room temperature dense boron carbide pellets with Au 4 MeV ions, for which most of the damage is in the ballistic regime. This study is part of a program devoted to the behavior of boron carbide under irradiation. Raman observations have been performed after the irradiations together with transmission electron microscopy (TEM). Raman observations show a strong structural damage at moderate fluences (10{sup 14}/cm{sup 2}, about 0.1 dpa), in agreement with previous studies. On the other hand, TEM shows the structure remains crystalline up to 10{sup 15}/cm{sup 2} then partially amorphises. The amorphisation is heterogeneous, with the formation of nanometric amorphous zones with increasing density. It then appears short range and long range disorder occurs at quite different damage levels. Further experiments are in progress aiming at studying the structural stability of boron carbide and isostructural materials (α-B, B{sub 6}Si,…).

  11. Formation of complex precursors of amino acids by irradiation of simulated interstellar media with heavy ions

    Science.gov (United States)

    Kobayashi, K.; Suzuki, N.; Taniuchi, T.; Kaneko, T.; Yoshida, S.

    A wide variety of organic compounds have been detected in such extraterrestrial bodies as meteorites and comets Amino acids were identified in the extracts from Murchison meteorite and other carbonaceous chondrites It is hypothesized that these compounds are originally formed in ice mantles of interstellar dusts ISDs in molecular clouds by cosmic rays and ultraviolet light UV Formation of amino acid precursors by high energy protons or UV irradiation of simulated ISDs was reported by several groups The amino acid precursors were however not well-characterized We irradiated a frozen mixture of methanol ammonia and water with heavy ions to study possible organic compounds abiotically formed in molecular clouds by cosmic rays A mixture of methanol ammonia and water was irradiated with carbon beams 290 MeV u from a heavy ion accelerator HIMAC of National Institute of Radiological Sciences Japan Irradiation was performed either at room temperature liquid phase or at 77 K solid phase The products were characterized by gel filtration chromatography GFC FT-IR pyrolysis PY -GC MS etc Amino acids were analyzed by HPLC and GC MS after acid hydrolysis or the products Amino acids such as glycine and alanine were identified in the products in both the cases of liquid phase and solid phase irradiation Energy yields G-values of glycine were 0 014 liquid phase and 0 007 solid phase respectively Average molecular weights of the products were estimated as to 2300 in both the case Aromatic hydrocarbons N-containing heterocyclic

  12. Viscous surface flow induced on Ti-based bulk metallic glass by heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Kun [Key Laboratory of Microgravity (National Microgravity Laboratory), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); Hu, Zheng [Key Laboratory of Microgravity (National Microgravity Laboratory), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); Science and Technology on Vehicle Transmission Laboratory, China North Vehicle Research Institute, Beijing 100072 (China); Li, Fengjiang [Key Laboratory of Microgravity (National Microgravity Laboratory), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); Wei, Bingchen, E-mail: weibc@imech.ac.cn [Key Laboratory of Microgravity (National Microgravity Laboratory), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China)

    2016-12-30

    Highlights: • Obvious smoothing and roughening phases on the Ti-based MG surface resulted, which correspond respectively to the normal and off-normal incidence angles. • Atomic force microscopy confirms two types of periodic ripples distributed evenly over the rough surface. • The irradiation-induced viscosity of MG is about 4×10{sup 12} Pa·s, which accords with the theoretical prediction for metallic glasses close to glass transition temperature. • Surface-confined viscous flow plays a dominant quantitative role, which is due to radiation-induced softening of the low-viscosity surface layer. - Abstract: Ti-based bulk metallic glass was irradiated by a 20 MeV Cl{sup 4+} ion beam under liquid-nitrogen cooling, which produced remarkable surface smoothing and roughening that respectively correspond to normal and off-normal incidence angles of irradiation. Atomic force microscopy confirms two types of periodic ripples distributed evenly over the rough glass surface. In terms of mechanism, irradiation-induced viscosity agrees with the theoretical prediction for metallic glasses near glass transition temperature. Here, a model is introduced, based on relaxation of confined viscous flow with a thin liquid-like layer, that explains both surface smoothing and ripple formation. This study demonstrates that bulk metallic glass has high morphological instability and low viscosity under ion irradiation, which assets can pave new paths for metallic glass applications.

  13. Microstructure evolution and hardness change in ordered Ni3V intermetallic alloy by energetic ion irradiation

    International Nuclear Information System (INIS)

    Hashimoto, A.; Kaneno, Y.; Semboshi, S.; Yoshizaki, H.; Saitoh, Y.; Okamoto, Y.; Iwase, A.

    2014-01-01

    Ni 3 V bulk intermetallic compounds with ordered D0 22 structure were irradiated with 16 MeV Au ions at room temperature. The irradiation induced phase transformation was examined by means of the transmission electron microscope (TEM), the extended X-ray absorption fine structure measurement (EXAFS) and the X-ray diffraction (XRD). We also measured the Vickers hardness for unirradiated and irradiated specimens. The TEM observation shows that by the Au irradiation, the lamellar microstructures and the super lattice spot in diffraction pattern for the unirradiated specimen disappeared. This TEM result as well as the result of XRD and EXAFS measurements means that the intrinsic D0 22 structure of Ni 3 V changes into the A1 (fcc) structure which is the lattice structure just below the melting point in the thermal equilibrium phase diagram. The lattice structure change from D0 22 to A1 (fcc) accompanies a remarkable decrease in Vickers microhardness. The change in crystal structure was discussed in terms of the thermal spike and the sequential atomic displacements induced by the energetic heavy ion irradiation

  14. Effect of ion beam irradiation on metal particle doped polymer ...

    Indian Academy of Sciences (India)

    and converts polymeric structure into hydrogen depleted carbon network. ... Composite materials; ion beam irradiation; dielectric properties; X-ray diffraction. ..... Coat. Technol. 201 8225. Raja V, Sharma A K and Narasimha V V R 2004 Mater.

  15. Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Topper, Alyson D.; Campola, Michael J.; Label, Kenneth A.

    2017-01-01

    In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.

  16. Swift heavy ion irradiation induced modification of structure and ...

    Indian Academy of Sciences (India)

    1Department of Physics, Salipur College, Salipur 754 103, India. 2Department of ... Ion irradiation; nanoparticles; atomic force microscopy; BiFeO3. 1. Introduction .... and to understand their possible origin, a study on power spectral density ...

  17. Hardening and formation of dislocation structures in LiF crystals irradiated with MeV-GeV ions

    CERN Document Server

    Manika, I; Schwartz, K; Trautmann, C

    2002-01-01

    Material modifications of LiF crystals irradiated with Au, Pb and Bi ions of MeV to GeV energy are studied by means of microindentation measurements and dislocation etching. Above a critical irradiation fluence of 10 sup 9 ions/cm sup 2 , the microhardness can improve by a factor of 2 in the bulk and by more than 3 on the surface. Radiation-induced hardening follows the evolution of the energy loss along the ion path. Annealing experiments indicate that complex defect aggregates created in the tracks play a major role for the hardness change. Evidence for severe structural modifications is found when etching indentation impressions in highly irradiated crystals leading to similar pattern as in amorphous or micro-grained materials. Dislocation etching also reveals long-range stress fields extending far beyond the implantation zone deep into the nonirradiated crystal.

  18. Thermoluminescence spectra of natural CaF2 irradiated by 10MeV electrons

    International Nuclear Information System (INIS)

    Manrique, J.; Angulo, S.; Pardo, M.P.; Gastesi, R.; De la Cruz, A.; Perez, A.

    2006-01-01

    The spectra of thermoluminescence from natural and electron-irradiated fluorite in the 350-800nm spectral range were studied between room temperature and 500 o C. The sample came from Asturias (Spain) and was analyzed by X-ray diffractometry and inductively coupled plasma-mass spectrometry. Glow peaks appeared at 115, 205 and 310 o C. Main emissions occurred at 475, 575, 650 and 745nm, attributed to the Dy +3 ion and, at 410nm, from electron-hole recombination. The fractional glow technique and the general order model were employed to study the emission at 575nm in detail. The results showed that the 115 and 205 o C glow peaks originate at traps with activation energies of 1.6 and 1.9eV, respectively, on the kinetic order of 1.5 and 1.3 and frequency factors of 1.7x10 19 and 2.7x10 19 s -1 , respectively. Spectrally resolved fading produced by storage was observed, and we concluded that the emission was due to large defect complexes. The dosimetric study showed that there was saturation at doses higher than 2kGy

  19. Effect of irradiation temperature on microstructural changes in self-ion irradiated austenitic stainless steel

    Science.gov (United States)

    Jin, Hyung-Ha; Ko, Eunsol; Lim, Sangyeob; Kwon, Junhyun; Shin, Chansun

    2017-09-01

    We investigated the microstructural and hardness changes in austenitic stainless steel after Fe ion irradiation at 400, 300, and 200 °C using transmission electron microscopy (TEM) and nanoindentation. The size of the Frank loops increased and the density decreased with increasing irradiation temperature. Radiation-induced segregation (RIS) was detected across high-angle grain boundaries, and the degree of RIS increases with increasing irradiation temperature. Ni-Si clusters were observed using high-resolution TEM in the sample irradiated at 400 °C. The results of this work are compared with the literature data of self-ion and proton irradiation at comparable temperatures and damage levels on stainless steels with a similar material composition with this study. Despite the differences in dose rate, alloy composition and incident ion energy, the irradiation temperature dependence of RIS and the size and density of radiation defects followed the same trends, and were very comparable in magnitude.

  20. Development of the integrated control system for the microwave ion source of the PEFP 100-MeV proton accelerator

    Science.gov (United States)

    Song, Young-Gi; Seol, Kyung-Tae; Jang, Ji-Ho; Kwon, Hyeok-Jung; Cho, Yong-Sub

    2012-07-01

    The Proton Engineering Frontier Project (PEFP) 20-MeV proton linear accelerator is currently operating at the Korea Atomic Energy Research Institute (KAERI). The ion source of the 100-MeV proton linac needs at least a 100-hour operation time. To meet the goal, we have developed a microwave ion source that uses no filament. For the ion source, a remote control system has been developed by using experimental physics and the industrial control system (EPICS) software framework. The control system consists of a versa module europa (VME) and EPICS-based embedded applications running on a VxWorks real-time operating system. The main purpose of the control system is to control and monitor the operational variables of the components remotely and to protect operators from radiation exposure and the components from critical problems during beam extraction. We successfully performed the operation test of the control system to confirm the degree of safety during the hardware performance.

  1. Depletion voltage studies on n-in-n MCz silicon diodes after irradiation with 70 MeV protons

    CERN Document Server

    Holmkvist, William

    2014-01-01

    Silicon detectors is the main component in the pixel detectors in the ATLAS experiment at CERN in order to detect the particles and recreate their tracks after a proton-proton collision. One criteria on these detectors is to be able to operate in the high radiation field close to the particle collision. The usual behavior of the silicon detectors is that they get type inverted and an increase in the depletion voltage can be seen after exposed to significant amounts of radiation. In contrast n-type Magnetic Czochralski (MCz) silicon doesn’t follow FZ silicons pattern of getting type inverted when it comes to high energy particle irradiation, in the range of GeV. However it was observed that MCz silicon diodes that had been irradiated with 23 MeV protons followed the FZ silicon behavior and did type invert. The aim of the project is to find out how the depletion voltage of MCz silicon changes after being irradiated by 70 MeV at fluencies of 1E13, 1E14 and 5E14 neq/cm2, to give a further insight of at what en...

  2. Microstructural evolution of Fesbnd 22%Cr model alloy under thermal ageing and ion irradiation conditions studied by atom probe tomography

    Science.gov (United States)

    Korchuganova, Olesya A.; Thuvander, Mattias; Aleev, Andrey A.; Rogozhkin, Sergey V.; Boll, Torben; Kulevoy, Timur V.

    2016-08-01

    Nanostructure evolution during ion irradiation of two thermally aged binary Fee22Cr alloys has been investigated using atom probe tomography. Specimens aged at 500 °C for 50 and 200 h were irradiated by 5.6 MeV Fe ions at room temperature up to fluences of 0.3 × 1015 ions/cm2 and 1 × 1015 ions/cm2. The effect of irradiation on the material nanostructure was examined at a depth of 1 μm from the irradiated surface. The analysis of Cr radial concentration functions reveals that dense α‧-phase precipitates in the 200 h aged alloy become diffuse and thereby larger when subjected to irradiation. On the other hand, less Cr-enriched precipitates in the alloy aged for 50 h are less affected. The CreCr pair correlation function analysis shows that matrix inhomogeneity decreases under irradiation. Irradiation leads to a decrease in the number density of diffuse clusters, whereas in the case of well-developed precipitates it remains unchanged.

  3. Multiple relaxation processes in high-energy ion irradiated kapton-H polyimide: Thermally stimulated depolarization current study

    International Nuclear Information System (INIS)

    Garg, Maneesha; Quamara, J.K.

    2006-01-01

    High-energy ion irradiation effects on the thermally stimulated depolarization current (Tdc) behaviour of kapton-H samples (12.5 μm) irradiated with 50 MeV Li ion (fluence 5 x 10 4 , 10 5 and 5 x 10 5 ions/cm 2 ) have been investigated. The TSDC spectra of the irradiated samples reveal that the β-peak (appearing around 80-110 deg. C) associated with dipolar relaxation has been significantly affected owing to the demerization of carbonyl groups due to irradiation. The TSDC spectra also reveal a new relaxation process (termed as γ-relaxation) around 30 deg. C, due to increased water absorptivity in irradiated samples. The peak around 200 deg. C (α-peak) associated with space charge relaxation process also shows a behavioural change with ion irradiation. The peak not only shifts towards the higher temperature with increasing fluence but also show an increase in its activation energy (0.33-0.99 eV) with increasing polarizing field. The creation of new deep energy trap centers due to the formation of conjugated bonds after irradiation is responsible for this modification. The Cole-Cole distribution curves show the formation of new sub-polar group with different characteristic relaxation time

  4. Magnetic patterning by means of ion irradiation and implantation

    International Nuclear Information System (INIS)

    Fassbender, J.; McCord, J.

    2008-01-01

    A pure magnetic patterning by means of ion irradiation which relies on a local modification of the magnetic anisotropy of a magnetic multilayer structure has been first demonstrated in 1998. Since then also other magnetic properties like the interlayer exchange coupling, the exchange bias effect, the magnetic damping behavior and the saturation magnetization to name a few have also been demonstrated to be affected by ion irradiation or ion implantation. Consequently, all these effects can be used if combined with a masking technique or employing direct focused ion beam writing for a magnetic patterning and thus an imprinting of an artificial magnetic domain structure, which subsequently modifies the integral magnetization reversal behavior or the magnetization dynamics of the film investigated. The present review will summarize how ion irradiation and implantation can affect the magnetic properties by means of structural modifications. The main part will cover the present status with respect to the pure magnetic patterning of micro- and nano structures

  5. Monte Carlo simulation of channeled and random profiles of heavy ions implanted in silicon at high energy (1.2 MeV)

    International Nuclear Information System (INIS)

    Mazzone, A.M.

    1987-01-01

    In order to study channeling effects and implants of heavy ions with energy of few MeV in silicon, ion distributions are calculated with a Monte Carlo method for axial [(001) axis], planar, and nominally random directions for As + and P + ions implanted into silicon with energies in the range 100 keV to 2 MeV. The calculation indicates an appreciable channeling at the higher energy only for the (001) axis and the (110) planes. For heavy ions with energy in the MeV range the subsidence of channeling into major channels and the disappearance of minor channels are shown

  6. Theoretical and experimental radiation effectiveness of the free radical dosimeter alanine to irradiation with heavy charged particles

    DEFF Research Database (Denmark)

    Hansen, Jørgen-Walther; Olsen, K. J.

    1985-01-01

    Dose-response characteristics have been measured for the crystalline amino acid L-.alpha.-alanine irradiated with ion beams of 6 and 16 MeV protons, 20 MeV .alpha. particles, 21 MeV7Li ions, 64 MeV16O ions, and 80 MeV32S ions. The experimental radiation effectiveness (RE) with reference to low-LE...

  7. Test calculations of photoneutrons emission from surface of uranium sphere irradiated by 28 MeV electrons

    International Nuclear Information System (INIS)

    Blokhin, A.I.; Degtyarev, I.I.

    2002-01-01

    In this paper the results of physical verification for the BOFOD photonuclear data files are reported, available for the uranium isotopes U 235 , U 238 . These results were compared with calculated data by the parameterization driven model of photonuclear reaction and experimental data. Experimental data of photoneutron yields from surface of uranium sphere irradiated by 28 MeV electrons are used for a verification. Both calculations have been carried out with the RTS and T general purpose Monte Carlo code with detailed electron-photon-nucleon transport simulation using the ENDF/B-VI and EPDL evaluated data libraries

  8. Comments on Moessbauer-effect studies on 2-MeV proton-irradiated Nb3Sn

    International Nuclear Information System (INIS)

    Cox, D.E.; Sweedler, A.R.

    1979-01-01

    In a recent paper, Herber and Kalish have presented 119 Sn Moessbauer data for Nb 3 Sn irradiated by 2-MeV protons which they interpret in terms of a statistical distribution of site defects rather than interchange of Nb and Sn atoms. Further analysis of these data leads to the conclusion that they are in fact quite consistent with the presence of a substantial amount of radiation-induced site-exchange disorder. This is in agreement with the findings of a number of recent diffraction studies

  9. Light-Ion Production in the Interaction of 96 MeV Neutrons with Silicon

    International Nuclear Information System (INIS)

    Tippawan, U.; Dangtip, S.; Pomp, S.; Atac, A.; Bergenwall, B.; Blomgren, J.; Hildebrand, A.; Johansson, C.; Klug, J.; Mermod, P.; Oesterlund, M.; Nilsson, L.; Elmgren, K.; Olsson, N.; Jonsson, O.; Prokofiev, A.V.; Renberg, P.-U.; Nadel-Turonski, P.; Corcalciuc, V.; Watanabe, Y.

    2005-01-01

    Radiation effects induced by terrestrial cosmic rays in microelectronics, on board aircrafts as well as at sea level, have recently attracted much attention. The most important particle radiation is due to spallation neutrons, created in the atmosphere by cosmic-ray protons. When, e.g., an electronic memory circuit is exposed to neutron radiation, charged particles can be produced in a nuclear reaction. The charge released by ionization can cause a flip of the memory content in a bit, which is called a single-event upset (SEU). This induces no hardware damage to the circuit, but unwanted re-programming of memories, CPUs, etc., can have consequences for the reliability, and ultimately also for the safety of the system.Data on energy and angular distributions of the secondary particles produced by neutrons in silicon nuclei are essential input for analyses and calculation of SEU rate. In this work, double-differential cross sections of inclusive light-ion (p, d, t, 3He and α) production in silicon, induced by 96 MeV neutrons, are presented. Energy distributions are measured at eight laboratory angles from 20 deg. to 160 deg. in steps of 20 deg. Deduced energy-differential and production cross sections are reported as well. Experimental cross sections are compared to theoretical reaction model calculations and existing experimental data in the literature

  10. Monte Carlo simulation of damage and amorphization induced by swift-ion irradiation in LiNbO3

    International Nuclear Information System (INIS)

    Garcia, G.; Agullo-Lopez, F.; Olivares-Villegas, J.; Garcia-Navarro, A.

    2006-01-01

    This paper presents a Monte Carlo (MC) simulation tool which is applied to describe the ion beam induced damage generated by electronic excitation in LiNbO 3 . Based on a previously published thermal spike based analytical model, the MC technique allows for a more flexible and accurate treatment of the problem. A main advantage of this approach with respect to the analytical one is the possibility of studying the role of statistical fluctuations, relevant at low fluences. The paper recalls the main features of the physical model, describes the MC algorithm, and compares simulation results to experimental data (irradiations of LiNbO 3 using silicon ions at 5 and 7.5 MeV and oxygen ions at 5 MeV)

  11. Alanine-EPR dosimetry in 10 MeV electron beam to optimize process parameters for food irradiation

    International Nuclear Information System (INIS)

    Sanyal, B.; Kumar, S.; Kumar, M.; Mittal, K.C.; Sharma, A.

    2011-01-01

    Absorbed dose in a food product is determined and controlled by several components of the LINAC irradiation facility as well as the product. Standardization of the parameters characterizing the facility components, process load and the irradiation conditions collectively termed as 'process parameters' are of paramount importance for successful dose delivery to the food products. In the present study alanine-EPR dosimetry system was employed to optimize the process parameters of 10 MeV electron beam of a LINAC facility for commercial irradiation of food. Three sets of experiments were carried out with different food commodities namely, mango, potato and rawa with the available product conveying system of different irradiation geometry like one sided or both sided mode of irradiation. Three dimensional dose distributions into the process load for low dose requiring food commodities (0.25 to 1 kGy) were measured in each experiment. The actual depth dose profile in food product and useful scan width of the electron beam were found out to be satisfactory for commercial radiation processing of food. Finally a scaled up experiment with commercial food product (packets of Rawa) exhibited adequate dose uniformity ratio of 3 proving the feasibility of the facility for large scale radiation processing of food commodities. (author)

  12. Defects in hyperpure Fe-based alloys created by 3 MeV e{sup -}-irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Li, X H; Moser, P [CEA Centre d` Etudes de Grenoble, 38 (France). Dept. de Recherche Fondamentale sur la Matiere Condensee; Akamatsu, M; Van Duysen, C [Electricite de France (EDF), 77 - Ecuelles (France)

    1994-12-31

    Information about vacancy defects created in RPV (Reactor Pressure Vessels) steels after neutron irradiations are obtained via a simulation: the RPV steels are simulated by a series of high purity Fe-based alloys; the neutron irradiation is simulated by a 3 MeV electron irradiation; vacancy defects characteristics are obtained by positron lifetime techniques. Irradiations are made at 150 or 288 deg C, with a dose of 4*10{sup 19} e-/cm{sup 2}, and followed by isochronal annealing in the range 20-500 deg C. The observed vacancy defects are single trapped vacancies and small vacancy clusters, the size of which being lower than 10 empty atomic volumes (vacancy clusters containing more than 50 empty atomic volumes were never found). A large recovery step is observed between 200 and 400 deg C, after 150 deg C irradiation and attributed to vacancy-impurity detrapping, and also, vacancy cluster evaporation. The influence of C, Cu and Mo are presented. These results are in agreement with a model supposing, in pure Fe, single vacancy migration at -50 deg C and vacancy-impurity detrapping at 200 deg C. (authors). 4 figs., 15 refs.

  13. Anisotropic dislocation loop nucleation in ion-irradiated MgAl2O4

    International Nuclear Information System (INIS)

    Zinkle, S.J.

    1992-01-01

    This work is intended to investigate the effects of transmutation products and varying ionizing-to-displacive damage ratio on microstructural evolution in ceramics for fusion machine. Polycrystalline disks of stoichiometric magnesium aluminate spinel (MgAl 2 O 4 ) were irradiated with 2 MeV Al + ions at 650C and subsequently analyzed in cross section using transmission electron microscopy (TEM). Interstitial dislocation loops were observed on [110] and [111] habit planes. The population of loops on both sets of habit planes was strongly dependent on their orientation with respect to the ion beam direction. The density of loops with habit plane normals nearly perpendicular to the ion beam direction was much higher than loops with habit plane normals nearly parallel to the ion beam direction. On the other hand, the loop size was nearly independent of habit plane orientation. This anisotropic loop nucleation does not occur in ion-irradiated metals such as copper and may be associated with the structure of displacement cascades in ceramics

  14. Alpha-heavy-ion angular correlations from /sup 28/Si + /sup 12/C. [84 to 91. 5 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Ost, R; Cole, A J [Institut des Sciences Nucleaires, 38 - Grenoble (France); Clover, M R; Fulton, B R; Sikora, B [Rochester Univ., NY (USA). Nuclear Structure Research Lab.

    1980-06-01

    Alpha particles have been measured in coincidence with heavy recoil nuclei from the /sup 28/Si + /sup 12/C reaction. At Esub(lab) = 87 MeV angular correlations for alphas between 15/sup 0/ and 55/sup 0/ and heavy ions at angles -9/sup 0/, -12/sup 0/ and -15/sup 0/ have been taken. An excitation function of coincidence events with THETAsub(..cap alpha..) = 30/sup 0/ and THETAsub(HI) = -12/sup 0/ has been measured for 84 MeV < Esub(lab) < 91.5 MeV. The results are well described by a statistical-model calculation for compound nucleus decay. No evidence is found for additional processes.

  15. Stability of Y-Ti-O nanoparticles in ODS alloys during heat treatment and high temperature swift heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Skuratov, V.A. [FLNR, JINR, Dubna (Russian Federation); National Research Nuclear University MEPhI, Moscow (Russian Federation); Dubna State University, Dubna (Russian Federation); Sohatsky, A.S.; Kornieieva, K. [FLNR, JINR, Dubna (Russian Federation); O' Connell, J.H.; Neethling, J.H. [CHRTEM, NMMU, Port Elizabeth (South Africa); Nikitina, A.A.; Ageev, V.S. [JSC VNIINM, Moscow (Russian Federation); Zdorovets, M. [Institute of Nuclear Physics, Astana (Kazakhstan); Ural Federal University, Yekaterinburg (Russian Federation); Volkov, A.D. [Nazarbayev University, Astana (Kazakhstan)

    2016-12-15

    Aim of this report is to compare the morphology of swift (167 and 220 MeV) Xe ion induced latent tracks in Y{sub 2}Ti{sub 2}O{sub 7} nanoparticles during post-irradiation heat treatment and after irradiation at different temperatures in pre-thinned TEM foils and TEM targets prepared from hundreds microns thick irradiated oxide dispersion strengthened (ODS) steel. No difference in track parameters was found in room temperature irradiated nanoparticles in pre-thinned and conventional samples. Microstructural data gathered from pre-thinned foils irradiated in the temperature range 350-650 C or annealed at similar temperatures demonstrate that amorphous latent tracks interact with the surrounding matrix, changing the track and nanoparticle morphology, while such effect is not observed in conventional ODS material treated at the same conditions. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Experimental and calculated effectiveness of a radiochromic dye film to stopping 21 MeV 7Li and 64 MeV 16O ions

    International Nuclear Information System (INIS)

    Olsen, K.J.; Hansen, J.W.

    1984-01-01

    Relative radiation effectiveness, RE, of 21 MeV 7 Li and 64 MeV 16 O ions being completely stopped in a tissue equivalent film dose meter has been measured as a function of penetration depth and energy, and the results have been compared with calculations based on a delta-ray theory for heavy charged particles developed by Katz et al. The experiment was designed to test calculations particularly in the Bragg-peak region of the slowing down particles where significant deviation between theory and experiment was found. Fitting of the characteristic D 37 dose and the size of the radiation sensitive element in the detector, which are important parameters in the theoretical model, does not improve the overall correlation between theory and experiment. It is concluded that disagreement between theoretical and experimental RE-values below 1.5 MeV/amu is partly due to lack of equivalence between the delta-ray spectrum and the slowing down spectrum of electrons from low-LET radiation, and partly from approximations in the calculated distribution of energy deposition of the delta-rays. (orig.)

  17. Electron spin resonance investigations on polycarbonate irradiated with U ions

    Energy Technology Data Exchange (ETDEWEB)

    Chipara, M.I.; Reyes-Romero, J

    2001-12-01

    Electron spin resonance investigations on polycarbonate irradiated with uranium ions are reported. The dependence of the resonance line parameters (line intensity, line width, double integral) on penetration depth and dose is studied. The nature of free radicals induced in polycarbonate by the incident ions is discussed in relation with the track structure. The presence of severe exchange interactions among free radicals is noticed.

  18. V79 survival following simultaneous or sequential irradiation by 15-MeV neutrons and 60Co photons

    International Nuclear Information System (INIS)

    Higgins, P.D.; DeLuca, P.M. Jr.; Pearson, D.W.; Gould, M.N.

    1983-01-01

    A unique tandem source irradiation facility, composed of an intense d-T neutron source and a 60 Co teletherapy unit, was used to investigate biological responses for different neutron/photon configurations. V79 Chinese hamster cells, attached as monolayers in log-phase growth, were irradiated at 37 degrees C by either 14.8-MeV neutrons, 60 Co, or a mixture of 40% neutrons and 60% photons in simultaneous or sequential application. Measurements of cell survival indicate an increased effectiveness in cell killing for simultaneously administered neutrons and photons compared to that measured or predicted for sequentially applied beam modalities. An understanding of the magnitude of these interactive effects is important both for calculating accurate effective doses for neutron radiotherapy of deep-seated tumors, for which the photon component is appreciable, and for determination of environmental hazards to people occupationally exposed to mixtures of photons and neutrons

  19. V79 survival following simultaneous or sequential irradiation by 15-MeV neutrons and 60Co photons

    International Nuclear Information System (INIS)

    Higgins, P.D.; DeLuca, P.M. Jr.; Pearson, D.W.; Gould, M.N.

    1983-01-01

    A unique tandem source irradiation facility, composed of an intense d-T neutron source and a 60 Co teletherapy unit, was used to investigate biological responses for different neutron/photon configurations. V79 Chinese hamster cells, attached as monolayers in log-phase growth, were irradiated at 37 0 C by either 14.8-MeV neutrons, 60 Co, or a mixture of 40% neutrons and 60% photons in simultaneous or sequential application. Measurements of cell survival indicate an increased effectiveness in cell killing for simultaneously administered neutrons and photons compared to that measured or predicted for sequentially applied beam modalities. An understanding of the magnitude of these interactive effects is important both for calculating accurate effective doses for neutron radiotherapy of deep-seated tumors, for which the photon component is appreciable, and for determination of environmental hazards to people occupationally exposed to mixtures of photons and neutrons

  20. Mammary carcinogenesis induced by three consecutive 14 MeV neutron irradiations in Sprague-Dawley rats

    International Nuclear Information System (INIS)

    Jacrot, M.; Mouriquand, J.; Mouriquand, C.

    1978-01-01

    At high doses (400 to 800 rads) the relative biological effectiveness (R.B.E.) of neutrons is two or three times greater than that of X-rays or gamma radiation. The neutron irradiation-induced mammary carcinogenesis threshold, if any, is certainly very low in Sprague-Dawley females. The purpose of this work is to test the possibilities offered by three consecutive 14 MeV neutron irradiations in the mammary carcinogenesis region of Sprague-Dawley rats. The results of these experiments show a hormone-dependence of tumour promotion similar to that observed with chemical carcinogenetic agents. However these tumours, by their recurrences and possible metastases, bear some resemblance to breast cancers in women. Although the tumour induction frequencies seem modest in relation to those obtained with the DMBA model they should nevertheless prove very useful in the study of hormone effects liable to control the appearance of such radioinduced cancers [fr

  1. V79 survival following simultaneous or sequential irradiation by 14.8-MeV neutrons and 60Co photons

    International Nuclear Information System (INIS)

    Higgins, P.D.; DeLuca, P.M. Jr.; Pearson, D.W.; Gould, M.N.

    1981-01-01

    A unique tandem source irradiation facility, comprised of an intense d-T neutron source and a 60 Co teletherapy unit, has been used to investigate biological response for different neutron/photon configurations. V79 Chinese hamster cells, attached as monolayers in log phase growth, were irradiated at 37 0 C by either 14.8 MeV neutrons, 60 Co or by a mixture of 40% neutrons - 60% photons in simultaneous or sequential application. Measurements of cell survival indicate an increased effectiveness in cell killing for simultaneously administered neutrons and photons than was measured or predicted for sequentially applied beam modalities. An understanding of the magnitude of these interactive effects is important both for calculating accurate effective doses for neutron radiotherapy of deep-seated tumors, for which the photon component is appreciable and for determination of environmental hazards to people occupationally exposed to low levels of photons and neutrons

  2. Mutation effects of C{sup 2+} ion irradiation on the greasy Nitzschia sp

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Y.N., E-mail: ynyangbuaa@gmail.com [School of Chemistry and Environment, Beihang University, 37th Xueyuan Road, Haidian District, P.O. Box 106, 100191 Beijing (China); Liu, C.L.; Wang, Y.K. [School of Chemistry and Environment, Beihang University, 37th Xueyuan Road, Haidian District, P.O. Box 106, 100191 Beijing (China); Xue, J.M. [State Key Lab of Nuclear Physics and Nuclear Technology, Peking University, 100084 Beijing (China)

    2013-11-15

    Highlights: • The optimal conditions of C{sup 2+} ion irradiation on Nitzschia sp. were discussed. • Get the “saddle type” survival curve. • One mutant whose lipid content improved significantly was selected. • The C{sup 2+} ion irradiation didn’t change the algae's morphology and growth rate. - Abstract: Screening and nurturing algae with high productivity, high lipid content and strong stress resistance are very important in algae industry. In order to increase the lipid content, the Nitzschia sp. was irradiated with a 3 MeV C{sup 2+} beam. The sample pretreatment method was optimized to obtain the best mutagenic condition and the survival ratio curve. The positive mutants with a significant improvement in lipid content were screened and their C{sup 2+} mutagenic effects were analyzed by comparing the greasiness and growth characteristics with the wild type algae. Results showed that when the Nitzschia sp. was cultivated in nutritious medium containing 10% glycerol solution, and dried on the filter for 5 min after centrifugation, the realization of the microalgae heavy ion mutagenesis could be done. The survival ratio curve caused by C{sup 2+} irradiation was proved to be “saddle-shaped”. A positive mutant was screened among 20 survivals after irradiation, the average lipid content of the mutation increased by 9.8% than the wild type after 4 generations. But the growth rate of the screened mutation didn’t change after the heavy ion implantation compared to the wild type algae.

  3. Ion irradiation effect on metallic condensate adhesion to glass

    International Nuclear Information System (INIS)

    Kovalenko, V.V.; Upit, G.P.

    1984-01-01

    The ion irradiation effect on metallic condensate adhesion to glass is investigated. It has been found that in case of indium ion deposition the condensate adhesion to glass cleavages being in contact with atmosphere grows up to the level corresponding to a juvenile surface while in case of argon ion irradiation - exceeds it. It is shown that the observed adhesion growth is determined mainly by the surfwce modification comparising charge accumulation on surface, destruction of a subsurface layer and an interlayer formation in the condensate-substrate interface. The role of these factors in the course of various metals deposition is considered

  4. Disintegration of C60 by Xe ion irradiation

    International Nuclear Information System (INIS)

    Kalish, R.; Samoiloff, A.; Hoffman, A.; Uzan-Saguy, C.

    1993-01-01

    The Changes in resistivity of fullerene (C 60 ) films subject to 320 keV Xe ion irradiation are investigated as a function of ion dose. From a comparison of this dependence with similar data on other Xe irradiated C containing insulating materials and with data on C implanted fused quartz, it is concluded that upon ion impact C 60 clusters completely disintegrate. This disintegration releases about 60 C atoms which disperse amongst the remaining intact C 60 spheres giving rise to hopping conductivity between isolated C atoms. 16 refs., 3 figs

  5. Structural effects in UO{sub 2} thin films irradiated with U ions

    Energy Technology Data Exchange (ETDEWEB)

    Popel, A.J., E-mail: apopel@cantab.net [Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge CB2 3EQ (United Kingdom); Adamska, A.M.; Martin, P.G.; Payton, O.D. [Interface Analysis Centre, School of Physics, University of Bristol, Bristol BS8 1TL (United Kingdom); Lampronti, G.I. [Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge CB2 3EQ (United Kingdom); Picco, L.; Payne, L.; Springell, R.; Scott, T.B. [Interface Analysis Centre, School of Physics, University of Bristol, Bristol BS8 1TL (United Kingdom); Monnet, I.; Grygiel, C. [CIMAP, CEA-CNRS-ENSICAEN-Université de Caen, BP 5133, 14070 Caen Cedex5 (France); Farnan, I. [Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge CB2 3EQ (United Kingdom)

    2016-11-01

    Highlights: • Quantitative characterisation of radiation damage by kernel average misorientation. • UO{sub 2} (1 1 1) plane showed higher irradiation tolerance than (1 1 0) plane. • UO{sub 2} film-YSZ substrate interface is stable under low fluence irradiation. • (0 0 1), (1 1 0), (1 1 1) single crystal UO{sub 2} thin films on YSZ substrates are expected. - Abstract: This work presents the results of a detailed structural characterisation of irradiated and unirradiated single crystal thin films of UO{sub 2}. Thin films of UO{sub 2} were produced by reactive magnetron sputtering onto (0 0 1), (1 1 0) and (1 1 1) single crystal yttria-stabilised zirconia (YSZ) substrates. Half of the samples were irradiated with 110 MeV {sup 238}U{sup 31+} ions to fluences of 5 × 10{sup 10}, 5 × 10{sup 11} and 5 × 10{sup 12} ions/cm{sup 2} to induce radiation damage, with the remainder kept for reference measurements. It was observed that as-produced UO{sub 2} films adopted the crystallographic orientation of their YSZ substrates. The irradiation fluences used in this study however, were not sufficient to cause any permanent change in the crystalline nature of UO{sub 2}. It has been demonstrated that the effect of epitaxial re-crystallisation of the induced radiation damage can be quantified in terms of kernel average misorientation (KAM) and different crystallographic orientations of UO{sub 2} respond differently to ion irradiation.

  6. 12 MeV, 4.3 kW electron linear accelerator irradiation application

    International Nuclear Information System (INIS)

    Hang Desheng; Lai Qiji

    2000-01-01

    Characteristics of an electron linear accelerator, which has 6-12 MeV energy, 4.2 kW average beam power is introduced. Results show that it has advantages on improving the characteristics of semiconductor devices such as diodes, triodes, SCR, preventing garlic from sprout, preservation of food, and so on

  7. Irradiation of 4H-SiC UV detectors with heavy ions

    International Nuclear Information System (INIS)

    Kalinina, E. V.; Lebedev, A. A.; Bogdanova, E.; Berenquier, B.; Ottaviani, L.; Violina, G. N.; Skuratov, V. A.

    2015-01-01

    Ultraviolet (UV) photodetectors based on Schottky barriers to 4H-SiC are formed on lightly doped n-type epitaxial layers grown by the chemical vapor deposition method on commercial substrates. The diode structures are irradiated at 25°C by 167-MeV Xe ions with a mass of 131 amu at a fluence of 6 × 10 9 cm