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Sample records for mev implanted diamond

  1. Characterization of diamond amorphized by ion implantation

    International Nuclear Information System (INIS)

    Allen, W.R.; Lee, E.H.

    1992-01-01

    Single crystal diamond has been implanted at 1 MeV with 2 x 10 20 Ar/m 2 . Rutherford backscattering spectrometry in a channeled geometry revealed a broad amorphized region underlying a thin, partially crystalline layer. Raman spectroscopy disclosed modifications in the bonding characteristic of the appearance of non-diamond carbon. The complementary nature of the two analysis techniques is demonstrated. The Knoop hardness of the implanted diamond was reduced by implantation

  2. Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Willems van Beveren, L. H., E-mail: laurensw@unimelb.edu.au; Bowers, H.; Ganesan, K.; Johnson, B. C.; McCallum, J. C.; Prawer, S. [School of Physics, University of Melbourne, Parkville, Victoria 3010 (Australia); Liu, R. [SIMS Facility, Office of the Deputy-Vice Chancellor (Research and Development) Western Sydney University, Locked Bag 1797, Penrith, New South Wales 2751 (Australia)

    2016-06-14

    Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here, we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at. %. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.

  3. Ion implantation into diamond

    International Nuclear Information System (INIS)

    Sato, Susumu

    1994-01-01

    The graphitization and the change to amorphous state of diamond surface layer by ion implantation and its characteristics are reported. In the diamond surface, into which more than 10 16 ions/cm 2 was implanted, the diamond crystals are broken, and the structure changes to other carbon structure such as amorphous state or graphite. Accompanying this change of structure, the electric conductivity of the implanted layer shows two discontinuous values due to high resistance and low resistance. This control of structure can be done by the temperature of the base during the ion implantation into diamond. Also it is referred to that by the base temperature during implantation, the mutual change of the structure between amorphous state and graphite can be controlled. The change of the electric resistance and the optical characteristics by the ion implantation into diamond surface, the structural analysis by Raman spectroscopy, and the control of the structure of the implanted layer by the base temperature during implantation are reported. (K.I.)

  4. Luminescence of natural IIa diamond implanted with nitrogen ions

    International Nuclear Information System (INIS)

    Varichenko, V.S.; Zaitsev, A.M.; Stelmakh, V.F.

    1986-01-01

    Investigations on the influence of defect environment in the irradiated diamond lattice are presented. The N + implantation with energies from 60 keV up to 60 MeV was used both as method of introducing nitrogen containing defects into the diamond and as a good tool to create different environment of these defects. Photoluminescence, cathodoluminescence, and annealing measurements show that the action of defect environment is revealed through the effective pressure affecting the thermal stability of defects and their inhomogeneous distortion

  5. Homo-epitaxial diamond film growth on ion implanted diamond substrates

    Energy Technology Data Exchange (ETDEWEB)

    Weiser, P.S.; Prawer, S.; Nugent, K.W.; Bettiol, A.A.; Kostidis, L.I.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 {mu}m{sup 2}. After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs.

  6. Homo-epitaxial diamond film growth on ion implanted diamond substrates

    Energy Technology Data Exchange (ETDEWEB)

    Weiser, P S; Prawer, S; Nugent, K W; Bettiol, A A; Kostidis, L I; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 {mu}m{sup 2}. After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs.

  7. Homo-epitaxial diamond film growth on ion implanted diamond substrates

    International Nuclear Information System (INIS)

    Weiser, P.S.; Prawer, S.; Nugent, K.W.; Bettiol, A.A.; Kostidis, L.I.; Jamieson, D.N.

    1996-01-01

    The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 μm 2 . After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs

  8. Cluster Ion Implantation in Graphite and Diamond

    DEFF Research Database (Denmark)

    Popok, Vladimir

    2014-01-01

    Cluster ion beam technique is a versatile tool which can be used for controllable formation of nanosize objects as well as modification and processing of surfaces and shallow layers on an atomic scale. The current paper present an overview and analysis of data obtained on a few sets of graphite...... and diamond samples implanted by keV-energy size-selected cobalt and argon clusters. One of the emphases is put on pinning of metal clusters on graphite with a possibility of following selective etching of graphene layers. The other topic of concern is related to the development of scaling law for cluster...... implantation. Implantation of cobalt and argon clusters into two different allotropic forms of carbon, namely, graphite and diamond is analysed and compared in order to approach universal theory of cluster stopping in matter....

  9. ESR studies of high-energy phosphorus-ion implanted synthetic diamond crystals

    Energy Technology Data Exchange (ETDEWEB)

    Isoya, J [University of Library and Information Science, Tsukuba, Ibaraki (Japan); Kanda, H; Morita, Y; Ohshima, T

    1997-03-01

    Phosphorus is among potential n-type dopants in diamond. High pressure synthetic diamond crystals of type IIa implanted with high energy (9-18 MeV) phosphorus ions have been studied by using electron spin resonance (ESR) technique. The intensity and the linewidth of the ESR signal attributed to the dangling bond of the amorphous phase varied with the implantation dose, suggesting the nature of the amorphization varies with the dose. The ESR signals of point defects have been observed in the low dose as-implanted crystals and in the high dose crystals annealed at high temperature and at high pressure. (author)

  10. Radiation hardness of a single crystal CVD diamond detector for MeV energy protons

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Yuki, E-mail: y.sato@riken.jp [The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Shimaoka, Takehiro; Kaneko, Junichi H. [Graduate School of Engineering, Hokkaido University, N13, W8, Sapporo 060-8628 (Japan); Murakami, Hiroyuki [The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Isobe, Mitsutaka; Osakabe, Masaki [National Institute for Fusion Science, 322-6, Oroshi-cho Toki-city, Gifu 509-5292 (Japan); Tsubota, Masakatsu [Graduate School of Engineering, Hokkaido University, N13, W8, Sapporo 060-8628 (Japan); Ochiai, Kentaro [Fusion Research and Development Directorate, Japan Atomic Energy Agency, Tokai-mura, Naka-gun, Ibaraki 319-1195 (Japan); Chayahara, Akiyoshi; Umezawa, Hitoshi; Shikata, Shinichi [National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan)

    2015-06-01

    We have fabricated a particle detector using single crystal diamond grown by chemical vapor deposition. The irradiation dose dependence of the output pulse height from the diamond detector was measured using 3 MeV protons. The pulse height of the output signals from the diamond detector decreases as the amount of irradiation increases at count rates of 1.6–8.9 kcps because of polarization effects inside the diamond crystal. The polarization effect can be cancelled by applying a reverse bias voltage, which restores the pulse heights. Additionally, the radiation hardness performance for MeV energy protons was compared with that of a silicon surface barrier detector.

  11. Lattice site of helium implanted in Si and diamond

    International Nuclear Information System (INIS)

    Allen, W.R.

    1993-01-01

    Single crystals of silicon and diamond were implanted at 300K with 70 keV 3 He. Ion channeling analyses were executed by application of Rutherford backscattering spectrometry and nuclear reaction analysis. Helium exhibits a non-random lattice site in the channeling angular distributions for silicon and diamond. A major fraction of the implanted He was qualitatively identified to be near to the tetrahedral interstice in both materials

  12. Ferromagnetism appears in nitrogen implanted nanocrystalline diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Remes, Zdenek [Institute of Physics ASCR v.v.i., Cukrovarnicka 10, 162 00 Prague 6 (Czech Republic); Sun, Shih-Jye, E-mail: sjs@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Varga, Marian [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Chou, Hsiung [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Hsu, Hua-Shu [Department of Applied Physics, National Pingtung University of Education, Pingtung 900, Taiwan (China); Kromka, Alexander [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Horak, Pavel [Nuclear Physics Institute, 250 68 Rez (Czech Republic)

    2015-11-15

    The nanocrystalline diamond films turn to be ferromagnetic after implanting various nitrogen doses on them. Through this research, we confirm that the room-temperature ferromagnetism of the implanted samples is derived from the measurements of magnetic circular dichroism (MCD) and superconducting quantum interference device (SQUID). Samples with larger crystalline grains as well as higher implanted doses present more robust ferromagnetic signals at room temperature. Raman spectra indicate that the small grain-sized samples are much more disordered than the large grain-sized ones. We propose that a slightly large saturated ferromagnetism could be observed at low temperature, because the increased localization effects have a significant impact on more disordered structure. - Highlights: • Nitrogen implanted nanocrystalline diamond films exhibit ferromagnetism at room temperature. • Nitrogen implants made a Raman deviation from the typical nanocrystalline diamond films. • The ferromagnetism induced from the structure distortion is dominant at low temperature.

  13. Highly-focused boron implantation in diamond and imaging using the nuclear reaction {sup 11}B(p, α){sup 8}Be

    Energy Technology Data Exchange (ETDEWEB)

    Ynsa, M.D., E-mail: m.ynsa@uam.es [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física Aplicada, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Ramos, M.A. [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física de la Materia Condensada and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Skukan, N. [Laboratory for Ion Beam Interactions, Ruđer Bošković Institute, Bijenička 54, HR-10000 Zagreb (Croatia); Torres-Costa, V. [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física Aplicada, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Jakšić, M. [Laboratory for Ion Beam Interactions, Ruđer Bošković Institute, Bijenička 54, HR-10000 Zagreb (Croatia)

    2015-04-01

    Diamond is an especially attractive material because of its gemological value as well as its unique mechanical, chemical and physical properties. One of these properties is that boron-doped diamond is an electrically p-type semiconducting material at practically any boron concentration. This property makes it possible to use diamonds for multiple industrial and technological applications. Boron can be incorporated into pure diamond by different techniques including ion implantation. Although typical energies used to dope diamond by ion implantation are about 100 keV, implantations have also been performed with energies above MeV. In this work CMAM microbeam setup has been used to demonstrate capability to implant boron with high energies. An 8 MeV boron beam with a size of about 5 × 3 μm{sup 2} and a beam current higher than 500 pA has been employed while controlling the beam position and fluence at all irradiated areas. The subsequent mapping of the implanted boron in diamond has been obtained using the strong and broad nuclear reaction {sup 11}B(p, α){sup 8}Be at E{sub p} = 660 keV. This reaction has a high Q-value (8.59 MeV for α{sub 0} and 5.68 MeV for α{sub 1}) and thus is almost interference-free. The sensitivity of the technique is studied in this work.

  14. Experimental studies of N~+ implantation into CVD diamond thin films

    Institute of Scientific and Technical Information of China (English)

    辛火平; 林成鲁; 王建新; 邹世昌; 石晓红; 林梓鑫; 周祖尧; 刘祖刚

    1997-01-01

    The effects of N+ implantation under various conditions on CVD diamond films were analyzed with Raman spectroscopy, four-point probe method, X-ray diffraction (XRD), Rutherford backseattering spectroscopy (RBS), ultraviolet photoluminescence spectroscopy (UV-PL), Fourier transformation infrared absorption spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The results show that the N+ implantation doping without any graphitization has been successfully realized when 100 keV N+ ions at a dosage of 2 × 1016 cm-2 were implanted into diamond films at 550℃ . UV-PL spectra indicate that the implanted N+ ions formed an electrically inactive deep-level impurity in diamond films. So the sheet resistance of the sample after N+ implantation changed little. Carbon nitride containing C≡N covalent bond has been successfully synthesized by 100 keV, 1.2×1018 N/cm2 N+ implantation into diamond films. Most of the implanted N+ ions formed C≡N covalent bonds with C atoms. The others were free state nitroge

  15. Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization

    Science.gov (United States)

    Erich, M.; Kokkoris, M.; Fazinić, S.; Petrović, S.

    2018-02-01

    This work reports on the induced diamond crystal amorphization by 4 MeV carbon ions implanted in the 〈1 0 0〉 oriented crystal and its determination by application of RBS/C and EBS/C techniques. The spectra from the implanted samples were recorded for 1.2, 1.5, 1.75 and 1.9 MeV protons. For the two latter ones the strong resonance of the nuclear elastic scattering 12C(p,p0)12C at 1.737 MeV was explored. The backscattering channeling spectra were successfully fitted and the ion beam induced crystal amorphization depth profile was determined using a phenomenological approach, which is based on the properly defined Gompertz type dechanneling functions for protons in the 〈1 0 0〉 diamond crystal channels and the introduction of the concept of ion beam amorphization, which is implemented through our newly developed computer code CSIM.

  16. Optical properties of implanted Xe color centers in diamond

    Science.gov (United States)

    Sandstrom, Russell; Ke, Li; Martin, Aiden; Wang, Ziyu; Kianinia, Mehran; Green, Ben; Gao, Wei-bo; Aharonovich, Igor

    2018-03-01

    Optical properties of color centers in diamond have been the subject of intense research due to their promising applications in quantum photonics. In this work we study the optical properties of Xe related color centers implanted into nitrogen rich (type IIA) and an ultrapure, electronic grade diamond. The Xe defect has two zero phonon lines at ∼794 nm and 811 nm, which can be effectively excited using both green and red excitation, however, its emission in the nitrogen rich diamond is brighter. Near resonant excitation is performed at cryogenic temperatures and luminescence is probed under strong magnetic field. Our results are important towards the understanding of the Xe related defect and other near infrared color centers in diamond.

  17. Ion beam induced luminescence from diamond using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Bettiol, A A; Jamieson, D N; Prawer, S; Allen, M G [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1994-12-31

    Analysis of the luminescence induced by a MeV ion beam offers the potential to provide useful information about the chemical properties of atoms in crystals to complement the information provided by more traditional Ion Beam Analysis (IBA) such as Rutherford Backscattering Spectrometry (RBS), ion channeling and Particle Induced X-ray Emission (PIXE). Furthermore, the large penetration depth of the MeV ion beam offers several advantages over the relatively shallow penetration of keV electrons typically employed in cathodoluminescence. An Ion Beam Induced Luminescence (IBIL) detection system was developed for the Melbourne microprobe that allows the spatial mapping of the luminescence signal along with the signals from RBS and PIXE. Homoepitaxial diamond growth has been studied and remarkable shifts in the characteristic blue luminescence of diamond towards the green were observed in the overgrowth. This has been tentatively identified as being due to transition metal inclusions in the epitaxial layers. 8 refs., 2 refs.

  18. Ion beam induced luminescence from diamond using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Bettiol, A.A.; Jamieson, D. N.; Prawer, S.; Allen, M.G. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1993-12-31

    Analysis of the luminescence induced by a MeV ion beam offers the potential to provide useful information about the chemical properties of atoms in crystals to complement the information provided by more traditional Ion Beam Analysis (IBA) such as Rutherford Backscattering Spectrometry (RBS), ion channeling and Particle Induced X-ray Emission (PIXE). Furthermore, the large penetration depth of the MeV ion beam offers several advantages over the relatively shallow penetration of keV electrons typically employed in cathodoluminescence. An Ion Beam Induced Luminescence (IBIL) detection system was developed for the Melbourne microprobe that allows the spatial mapping of the luminescence signal along with the signals from RBS and PIXE. Homoepitaxial diamond growth has been studied and remarkable shifts in the characteristic blue luminescence of diamond towards the green were observed in the overgrowth. This has been tentatively identified as being due to transition metal inclusions in the epitaxial layers. 8 refs., 2 refs.

  19. Simulation and visualization of ion-implantation in diamond

    International Nuclear Information System (INIS)

    Adler, Joan; Silverman, Amihai; Ierushalmi, Niv; Sorkin, Anastassia; Kalish, Rafi

    2014-01-01

    We have explored aspects of ion implantation in diamonds with molecular dynamics and tightbinding atomistic simulations. Relevant experiments and their potential applications as well as our computer models and computational approaches are described. Our simulations have been designed to answer questions proposed by experimental researchers concerning optimal laboratory schedules for the preparation of samples with potential applications to diamond membranes and NV centers for quantum computers. Simulation and visualization of results enable us to peek inside samples where experimental techniques cannot tread. In order to provide the requisite Brazilian component a new connection between these models and bootstrap percolation is made

  20. Annealing behaviour of MeV erbium implanted lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Gortmaker, P; McCallum, J C [Royal Melbourne Inst. of Tech., VIC (Australia)

    1994-12-31

    Lithium niobate (LiNbO{sub 3}) is a crystalline ceramic commonly used in the fabrication of optoelectronic devices. Recently, rare earth doping of LiNbO{sub 3} has become a topic of particular interest. The electronic configuration of rare earth elements such as Erbium (Er) and Neodymium (Nd) allows them to lase in nearly any host matrix making fabrication of a whole range of new optoelectronic devices possible. At present, the doping technique, for LiNbO{sub 3} are centred upon diffusion technology, but the diffusion profiles for the rare earths are not generally well-matched to the optical modes of the device. The aim of this research is to develop MeV implantation and annealing conditions of rare earth doped LiNbO{sub 3} that would be compatible with optoelectronic device fabrication. To determine the characteristics of the rare earth elements in the LiNbO{sub 3} host material over the depth range of interest in optoelectronic device applications, high energy Rutherford backscattering spectrometry and ion channeling (RBS-C) must be used. Presented here are the Er depth profile and lattice damage results obtained from 5 MeV RBS-C measurements on samples of LiNbO{sub 3} implanted with various doses of MeV Erbium and subsequently thermally annealed at a temperature of 1000 deg C. It was found that there is a peak implant concentration (2 x 10{sup 16} Er/cm{sup 2}) for which erbium no longer goes substitutional in the lattice, and the implantation damage is not fully removed by annealing. 8 refs., 3 figs.

  1. Annealing behaviour of MeV erbium implanted lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Gortmaker, P.; McCallum, J.C. [Royal Melbourne Inst. of Tech., VIC (Australia)

    1993-12-31

    Lithium niobate (LiNbO{sub 3}) is a crystalline ceramic commonly used in the fabrication of optoelectronic devices. Recently, rare earth doping of LiNbO{sub 3} has become a topic of particular interest. The electronic configuration of rare earth elements such as Erbium (Er) and Neodymium (Nd) allows them to lase in nearly any host matrix making fabrication of a whole range of new optoelectronic devices possible. At present, the doping technique, for LiNbO{sub 3} are centred upon diffusion technology, but the diffusion profiles for the rare earths are not generally well-matched to the optical modes of the device. The aim of this research is to develop MeV implantation and annealing conditions of rare earth doped LiNbO{sub 3} that would be compatible with optoelectronic device fabrication. To determine the characteristics of the rare earth elements in the LiNbO{sub 3} host material over the depth range of interest in optoelectronic device applications, high energy Rutherford backscattering spectrometry and ion channeling (RBS-C) must be used. Presented here are the Er depth profile and lattice damage results obtained from 5 MeV RBS-C measurements on samples of LiNbO{sub 3} implanted with various doses of MeV Erbium and subsequently thermally annealed at a temperature of 1000 deg C. It was found that there is a peak implant concentration (2 x 10{sup 16} Er/cm{sup 2}) for which erbium no longer goes substitutional in the lattice, and the implantation damage is not fully removed by annealing. 8 refs., 3 figs.

  2. Nanocrystalline diamond in carbon implanted SiO{sub 2}.

    Energy Technology Data Exchange (ETDEWEB)

    Tsoi, K.A.; Prawer, S.; Nugent, K.W.; Walker, R. J.; Weiser, P.S. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Recently, it was reported that nanocrystalline diamond can be produced via laser annealing of a high dose C implanted fused quartz (SiO{sub 2}) substrate. The aim of this investigation is to reproduce this result on higher C{sup +} dose samples and the non-implanted silicon sample, as well as optimise the power range and annealing time for the production of these nanocrystals of diamond. In order to provide a wide range of laser powers the samples were annealed using an Ar ion Raman laser. The resulting annealed spots were analysed using scanning electron microscopy (SEM) and Raman analysis. These techniques are employed to determine the type of bonding produced after laser annealing has occurred. 4 refs., 5 figs.

  3. Nanocrystalline diamond in carbon implanted SiO{sub 2}.

    Energy Technology Data Exchange (ETDEWEB)

    Tsoi, K A; Prawer, S; Nugent, K W; Walker, R J; Weiser, P S [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    Recently, it was reported that nanocrystalline diamond can be produced via laser annealing of a high dose C implanted fused quartz (SiO{sub 2}) substrate. The aim of this investigation is to reproduce this result on higher C{sup +} dose samples and the non-implanted silicon sample, as well as optimise the power range and annealing time for the production of these nanocrystals of diamond. In order to provide a wide range of laser powers the samples were annealed using an Ar ion Raman laser. The resulting annealed spots were analysed using scanning electron microscopy (SEM) and Raman analysis. These techniques are employed to determine the type of bonding produced after laser annealing has occurred. 4 refs., 5 figs.

  4. Ion implantation and diamond-like coatings of aluminum alloys

    Science.gov (United States)

    Malaczynski, G. W.; Hamdi, A. H.; Elmoursi, A. A.; Qiu, X.

    1997-04-01

    In an attempt to increase the wear resistance of some key automotive components, General Motors Research and Development Center initiated a study to determine the potential of surface modification as a means of improving the tribological properties of automotive parts, and to investigate the feasibility of mass producing such parts. This paper describes the plasma immersion ion implantation system that was designed for the study of various options for surface treatment, and it discusses bench testing procedures used for evaluating the surface-treated samples. In particular, both tribological and microstructural analyses are discussed for nitrogen implants and diamond-like hydrocarbon coatings of some aluminum alloys.

  5. Enhanced diffusion of dopants in vacancy supersaturation produced by MeV implantation

    International Nuclear Information System (INIS)

    Venezia, V.C.; Univ. of North Texas, Denton, TX; Haynes, T.E.; Agarwal, A.; Lucent Technologies, Murray Hill, NJ; Gossmann, H.J.; Eaglesham, D.J.

    1997-04-01

    The diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si + , 1 x 10 16 /cm 2 , implant. A 4x larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10x smaller diffusion relative to markers without the MeV Si + implant. This data demonstrates that a 2 MeV Si + implant injects vacancies into the near surface region

  6. Si exfoliation by MeV proton implantation

    International Nuclear Information System (INIS)

    Braley, Carole; Mazen, Frédéric; Tauzin, Aurélie; Rieutord, François; Deguet, Chrystel; Ntsoenzok, Esidor

    2012-01-01

    Proton implantation in silicon and subsequent annealing are widely used in the Smart Cut™ technology to transfer thin layers from a substrate to another. The low implantation energy range involved in this process is usually from a few ten to a few hundred of keV, which enables the separation of up to 2 μm thick layers. New applications in the fields of 3D integration and photovoltaic wafer manufacturing raise the demand for extending this technology to higher energy in order to separate thicker layer from a substrate. In this work, we propose to investigate the effect of proton implantation in single crystalline silicon in the 1–3 MeV range which corresponds to a 15–100 μm range for the hydrogen maximum concentration depth. We show that despites a considerably lower hydrogen concentration at R p , the layer separation is obtained with fluence close to the minimum fluence required for low energy implantation. It appears that the fracture propagation in Si and the resulting surface morphology is affected by the substrate orientation. Defects evolution is investigated with Fourier Transform Infrared Spectroscopy. The two orientations reveal similar type of defects but their evolution under annealing appears to be different.

  7. Implantation sites of Ce and Gd in diamond

    CERN Document Server

    Bharuth-Ram, K; Hofsäss, H C; Ronning, C; Dietrich, M

    2002-01-01

    The implantation sites of rare earth (RE) probes /sup 141/Ce (t/sub 1 /2/=32 d) and /sup 149/Gd (t/sub 1/2/=9.28 d) in diamond have been investigated using the emission channeling (EC) technique. Parent isotopes /sup 141/Cs and /sup 149/Dy were implanted into type IIa, diamond samples at an energy of 60 keV at the online isotope separator ISOLDE at CERN. /sup 141/Cs decays through the chain /sup 141/Cs-/sup 141/Ba-/sup 141/La-/sup 141/Ce-/sup 141/ Pr. EC measurements were made on the 102 keV conversion electrons emitted in the decay of /sup 141/Pr to its ground state. The decay of /sup 149 /Dy follows the chain /sup 149/Dy-/sup 149/Tb-/sup 149/Gd-/sup 149 /Eu-/sup 149/Sm. EC measurements were made on the 101 keV electrons emitted in the decay of /sup 149/Eu. Two-dimensional channeling patterns of the conversion electrons were obtained along and axial directions by raster scans with a Si surface barrier detector. Comparison of the observed patterns with simulated spectra show that in diamond 45-50% of the RE...

  8. Highly Stripped Ion Sources for MeV Ion Implantation

    Energy Technology Data Exchange (ETDEWEB)

    Hershcovitch, Ady

    2009-06-30

    Original technical objectives of CRADA number PVI C-03-09 between BNL and Poole Ventura, Inc. (PVI) were to develop an intense, high charge state, ion source for MeV ion implanters. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MV LINAC is used for acceleration of a few rnA. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform (de acceleration) to generate high-energy ion beams for implantation. This de acceleration of ions will be far more efficient (in energy utilization). The resultant implanter will be smaller in size. It will generate higher quality ion beams (with lower emittance) for fabrication of superior semiconductor products. In addition to energy and cost savings, the implanter will operate at a lower level of health risks associated with ion implantation. An additional aim of the project was to producing a product that can lead to long­ term job creation in Russia and/or in the US. R&D was conducted in two Russian Centers (one in Tomsk and Seversk, the other in Moscow) under the guidance ofPVI personnel and the BNL PI. Multiple approaches were pursued, developed, and tested at various locations with the best candidate for commercialization delivered and tested at on an implanter at the PVI client Axcelis. Technical developments were exciting: record output currents of high charge state phosphorus and antimony were achieved; a Calutron-Bemas ion source with a 70% output of boron ion current (compared to 25% in present state-of-the-art). Record steady state output currents of higher charge state phosphorous and antimony and P ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb {sup 4 +}, Sb{sup 5+}, and Sb{sup 6+} respectively. Ultimate commercialization goals did not succeed (even though a number of the products like high

  9. Focussed MeV ion beam implanted waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Von Bibra, M L; Roberts, A; Nugent, K; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    Single mode buried optical waveguides have been fabricated in fused silica by MeV proton implantation using a focussed hydrogen ion beam. The technique has the potential to direct write waveguide devices and produce multi-layered structures, without the need for intermediate steps such as mask fabrication or layered depositions. A micron resolution Confocal Raman Spectrometer has been used to map the distribution of atomic vacancies that forms the waveguiding region. The results are compared with theoretical calculations. Losses of 3 dB cm{sup -1} have been measured in unannealed samples, which decreases to less than 0.5 dB cm{sup -1} after annealing at 500 degrees Celsius. We describe methods for determining the refractive index distribution of single mode buried waveguides from their output intensity distributions via an inversion of the scalar wave equation. (authors). 5 figs.

  10. Focussed MeV ion beam implanted waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Von Bibra, M.L.; Roberts, A.; Nugent, K.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Single mode buried optical waveguides have been fabricated in fused silica by MeV proton implantation using a focussed hydrogen ion beam. The technique has the potential to direct write waveguide devices and produce multi-layered structures, without the need for intermediate steps such as mask fabrication or layered depositions. A micron resolution Confocal Raman Spectrometer has been used to map the distribution of atomic vacancies that forms the waveguiding region. The results are compared with theoretical calculations. Losses of 3 dB cm{sup -1} have been measured in unannealed samples, which decreases to less than 0.5 dB cm{sup -1} after annealing at 500 degrees Celsius. We describe methods for determining the refractive index distribution of single mode buried waveguides from their output intensity distributions via an inversion of the scalar wave equation. (authors). 5 figs.

  11. Note: Laser ablation technique for electrically contacting a buried implant layer in single crystal diamond

    International Nuclear Information System (INIS)

    Ray, M. P.; Baldwin, J. W.; Butler, J. E.; Pate, B. B.; Feygelson, T. I.

    2011-01-01

    The creation of thin, buried, and electrically conducting layers within an otherwise insulating diamond by annealed ion implantation damage is well known. Establishing facile electrical contact to the shallow buried layer has been an unmet challenge. We demonstrate a new method, based on laser micro-machining (laser ablation), to make reliable electrical contact to a buried implant layer in diamond. Comparison is made to focused ion beam milling.

  12. Amorphization and recrystallization in MeV ion implanted InP crystals

    International Nuclear Information System (INIS)

    Xiong, F.; Nieh, C.W.; Jamieson, D.N.; Vreeland, T. Jr.; Tombrello, T.A.

    1988-01-01

    A comprehensive study of MeV- 15 N-ion-implanted InP by a variety of analytical techniques has revealed the physical processes involved in MeV ion implantation into III-V compound semiconductors as well as the influence of post-implantation annealing. It provides a coherent picture of implant distribution, structural transition, crystalline damage, and lattice strain in InP crystals induced by ion implantation and thermal annealing. The experimental results from the different measurements are summarized in this report. Mechanisms of amorphization by implantation and recrystallization through annealing in MeV-ion-implanted InP are proposed and discussed in light of the results obtained

  13. The role of ion-implantation in the realization of spintronic devices in diamond

    Energy Technology Data Exchange (ETDEWEB)

    Kalish, Rafi, E-mail: kalish@si-sun1.technion.ac.il [Physics Department and Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

    2012-02-01

    The application of single photons emitted by specific quantum systems is promising for quantum computers, cryptography and for other future nano-applications. These heavily rely on ion implantation both for selective single ion implantations as well as for the introduction of controlled damage with specific properties. Of particular promise is the negatively charged nitrogen-vacancy (NV{sup -}) defect center in diamond. This center has many desirable luminescence properties required for spintronic devices operational at room temperature, including a long relaxation time of the color center, emission of photons in the visible and the fact that it is produced in diamond, a material with outstanding mechanical and optical properties. This center is usually realized by nitrogen and/or vacancy producing ion implantations into diamond which, following annealing, leads to the formation of the desired NV{sup -} center. The single photons emitted by the decay of this center have to be transported to allow their exploitation. This can be best done by realizing very thin wave guides in single crystal diamond with/or without nano-scale cavities in the same diamond in which NV centers are produced. For this, advantage is taken of the unique property of heavily ion-damaged diamond to be converted, following annealing, to etchable graphite. Thus a free standing submicron thick diamond membrane containing the NV center can be obtained. If desirable, specific photonic crystal structures can be realized in them by the use of FIB. The various ion-implantation schemes used to produce NV centers in diamond, free standing diamond membranes, and photonic crystal structures in them are reviewed. The scientific problems and the technological challenges that have to be solved before actual practical realization of diamond based spintronic devices can be produced are discussed.

  14. Large area diamond-like carbon coatings by ion implantation

    International Nuclear Information System (INIS)

    McCabe, A.R.; Proctor, G.; Jones, A.M.; Bull, S.J.; Chivers, D.J.

    1993-01-01

    Diamond-like Carbon (DLC) coatings have been deposited onto large geometry components in the Harwell Blue Tank ion implantation facility. To modify the substrate surface and to crack the low vapour pressure oil which is evaporated and condensed onto the surface, a 40 Kev nitrogen ion bucket ion source is used. The coating of areas up to 1 metre in diameter is common and with component manipulation larger areas may be coated. Since the component temperature never exceeds 80 o C during the process, a wide range of materials may be coated including specialist tool steels and even certain high density polymers. In order to produce hard wear resistant coatings with extremely low coefficients of friction (0.02-0.15) and a range of mechanical and electrical properties, various oil precursors have been investigated. The production and assessment of such coatings, including measurements of their tribiological performance, is presented. Applications for wear resistance, corrosion protection and electrically conducting coatings are discussed with examples drawn from engineering, electronics and biomedicine. (7 figures, 13 references). (UK)

  15. Structural transformation of implanted diamond layers during high temperature annealing

    International Nuclear Information System (INIS)

    Rubanov, S.; Fairchild, B.A.; Suvorova, A.; Olivero, P.; Prawer, S.

    2015-01-01

    In the recent years graphitization of ion-beam induced amorphous layers became the basic tool for device fabrication in diamond. The etchable graphitic layers can be removed to form free-standing membranes into which the desired structures can be sculpted using FIB milling. The optical properties of the devices fabricated using this method are assumed on the model of sharp diamond–air interface. The real quality of this interface could depend on degree of graphitization of the amorphous damage layers after annealing. In the present work the graphitization process was studied using conventional and analytical TEM. It was found that annealing at 550 °C results in a partial graphitization of the implanted volume with formation of the nano-crystalline graphitic phase sandwiched between layers of tetrahedral amorphous carbon. Annealing at 1400 °C resulted in complete graphitization of the amorphous layers. The average size of graphite nano-crystals did not exceed 5 nm with predominant orientation of c-planes normal to the sample surface.

  16. Generation of Nitrogen-Vacancy Centers in Diamond with Ion Implantation

    International Nuclear Information System (INIS)

    Cui Jin-Ming; Chen Xiang-Dong; Gong Zhao-Jun; Sun Fang-Wen; Han Zheng-Fu; Guo Guang-Can; Fan Le-Le; Zou Chong-Wen

    2012-01-01

    Nitrogen-vacancy defect color centers are created in a high purity single crystal diamond by nitrogen-ion implantation. Both optical spectrum and optically detected magnetic resonance are measured for these artificial quantum emitters. Moreover, with a suitable mask, a lattice composed of nitrogen-vacancy centers is fabricated. Rabi oscillation driven by micro-waves is carried out to show the quality of the ion implantation and potential in quantum manipulation. Along with compatible standard lithography, such an implantation technique shows high potential in future to make structures with nitrogen-vacancy centers for diamond photonics and integrated photonic quantum chip

  17. Study of the effects of focused high-energy boron ion implantation in diamond

    Science.gov (United States)

    Ynsa, M. D.; Agulló-Rueda, F.; Gordillo, N.; Maira, A.; Moreno-Cerrada, D.; Ramos, M. A.

    2017-08-01

    Boron-doped diamond is a material with a great technological and industrial interest because of its exceptional chemical, physical and structural properties. At modest boron concentrations, insulating diamond becomes a p-type semiconductor and at higher concentrations a superconducting metal at low temperature. The most conventional preparation method used so far, has been the homogeneous incorporation of boron doping during the diamond synthesis carried out either with high-pressure sintering of crystals or by chemical vapour deposition (CVD) of films. With these methods, high boron concentration can be included without distorting significantly the diamond crystalline lattice. However, it is complicated to manufacture boron-doped microstructures. A promising alternative to produce such microstructures could be the implantation of focused high-energy boron ions, although boron fluences are limited by the damage produced in diamond. In this work, the effect of focused high-energy boron ion implantation in single crystals of diamond is studied under different irradiation fluences and conditions. Micro-Raman spectra of the sample were measured before and after annealing at 1000 °C as a function of irradiation fluence, for both superficial and buried boron implantation, to assess the changes in the diamond lattice by the creation of vacancies and defects and their degree of recovery after annealing.

  18. Implantation of keV-energy argon clusters and radiation damage in diamond

    DEFF Research Database (Denmark)

    Popok, Vladimir; Samela, Juha; Nordlund, Kai

    2012-01-01

    We show that for impacting argon clusters, both mean projected ranges of the constituents and depths of radiation damage in diamond scale linearly with momentum. The same dependence was earlier found for keV-energy cluster implantation in graphite, thus suggesting the universality of this scaling...... law. For diamond, a good agreement for the value of displacement energy for the case of cluster impact is found by comparing the calculated target sputtering and experimentally measured depth of radiation damage....

  19. Determining the internal quantum efficiency of shallow-implanted nitrogen-vacancy defects in bulk diamond

    DEFF Research Database (Denmark)

    Radko, Ilya; Boll, Mads; Israelsen, Niels Møller

    2016-01-01

    -implanted NV defects in a single-crystal bulk diamond. Using a spherical metallic mirror with a large radius of curvature compared to the optical spot size, we perform calibrated modifications of the local density of states around NV defects and observe the change of their total decay rate, which is further...... used for IQE quantification. We also show that at the excitation wavelength of 532 nm, photo-induced relaxation cannot be neglected even at moderate excitation powers well below the saturation level. For NV defects shallow implanted 4.5 ± 1 and 8 ± 2 nm below the diamond surface, we determine...

  20. Effect of substrate temperature on the radiation damage from MeV Si implantation in Si

    International Nuclear Information System (INIS)

    Yu, X.K.; Shao Lin; Rusakova, Irene; Wang, X.M.; Ma, K.B.; Chen, H.; Liu, Jiarui; Chu, W.-K.

    2006-01-01

    We have investigated the radiation damage by MeV implantation of Si in Si and its evolution under thermal annealing. Si wafers were implanted with MeV Si at various substrate temperatures. Damages were characterized by Rutherford-backscattering (RBS) channeling and by transmission electron microscopy (TEM). Defect formation after post-implantation annealing is very sensitive to the substrate temperatures during implantation. When the substrate temperature was decreased to 200 K, TEM revealed two distinct bands of damage after annealing: one around the mean projected ion range and another at half the projected range. Our study indicates that the formation of defects at half range results from the solid phase epitaxy growth of initial buried amorphous layers

  1. Fluorescence lifetime studies of MeV erbium implanted silica glass

    International Nuclear Information System (INIS)

    Lidgard, A.; Polman, A.; Jacobsen, D.C.; Blonder, G.E.; Kistler, R.; Poate, J.M.; Becker, P.C.

    1991-01-01

    MeV erbium ion implantation into various SiO 2 glasses has been studied with the aim of incorporating the rare-earth dopant as an optically active ion in the silica network. The lifetime of the excited state ranges from 1.6 to 12.8 ms, depending on base material and implantation fluence. These results have positive implications for silica-based integrated optical technology. (Author)

  2. Fluorescence lifetime studies of MeV erbium implanted silica glass

    Energy Technology Data Exchange (ETDEWEB)

    Lidgard, A.; Polman, A.; Jacobsen, D.C.; Blonder, G.E.; Kistler, R.; Poate, J.M.; Becker, P.C. (AT and T Bell Labs., Murray Hill, NJ (USA))

    1991-05-23

    MeV erbium ion implantation into various SiO{sub 2} glasses has been studied with the aim of incorporating the rare-earth dopant as an optically active ion in the silica network. The lifetime of the excited state ranges from 1.6 to 12.8 ms, depending on base material and implantation fluence. These results have positive implications for silica-based integrated optical technology. (Author).

  3. Investigation of low-resistivity from hydrogenated lightly B-doped diamond by ion implantation

    Directory of Open Access Journals (Sweden)

    Cui Xia Yan et al

    2008-01-01

    Full Text Available We have implanted boron (B ions (dosage: 5×1014 cm-2 into diamond and then hydrogenated the sample by implantating hydrogen ions at room temperature. A p-type diamond material with a low resistivity of 7.37 mΩ cm has been obtained in our experiment, which suggests that the hydrogenation of B-doped diamond results in a low-resistivity p-type material. Interestingly, inverse annealing, in which carrier concentration decreased with increasing annealing temperature, was observed at annealing temperatures above 600 °C. In addition, the formation mechanism of a low-resistivity material has been studied by density functional theory calculation using a plane wave method.

  4. First studies of 500-nm Cherenkov radiation from 255-MeV electrons in a diamond crystal

    Energy Technology Data Exchange (ETDEWEB)

    Takabayashi, Y., E-mail: takabayashi@saga-ls.jp [SAGA Light Source, 8-7 Yayoigaoka, Tosu, Saga 841-0005 (Japan); Fiks, E.I. [National Research Tomsk Polytechnic University, 634050 Tomsk (Russian Federation); Pivovarov, Yu.L. [National Research Tomsk Polytechnic University, 634050 Tomsk (Russian Federation); National Research Tomsk State University, 634050 Tomsk (Russian Federation)

    2015-06-12

    The first experiment on Cherenkov light from 255-MeV electrons passing through a 50-μm-thick diamond crystal in a special geometry allowing extraction of 500-nm Cherenkov light at a right angle with respect to the electron beam direction has been performed at the injector linac of SAGA Light Source accelerator facility. The dependence of 500-nm Cherenkov light intensity (separated by a band-pass filter) on the crystal rotation angle was measured by a CCD detector. The experimentally obtained rocking curve with an intense maximum is theoretically explained as the projector effect of Cherenkov light deflected by the exit surface of the crystal. The width of the rocking curve is explained by the convolution of the standard Tamm–Frank angular distribution of Cherenkov radiation with chromatic aberration, the multiple scattering of electrons in a crystal, and initial electron beam angular divergence. In addition, it is found that the Cherenkov light intensity did not change under the (220) planar channeling condition, which is consistent with a recent theory. - Highlights: • Cherenkov light from 255-MeV electrons in a diamond crystal has been investigated. • The Cherenkov light from channeled electrons has been observed for the first time. • The experimental results are in good agreement with theory.

  5. Accelerator based synthesis of hydroxyapatite by MeV ion implantation

    International Nuclear Information System (INIS)

    Rautray, Tapash R.; Narayanan, R.; Kwon, Tae-Yub; Kim, Kyo-Han

    2010-01-01

    Accelerator based MeV ion implantation of Ca 2+ and P 2+ into the titanium substrate to form hydroxyapatite (HA) has been carried out. Calcium hydroxide was formed after heating the calcium implanted titanium in air at 80 o C for 3 h. Upon subsequent annealing for 5 min at 600 o C HA was formed on the surface. Penetration depth of the HA layer in this method is much higher as compared to keV ion implantation. By elemental analysis, Ca/P ratio of the HA was found to be 1.76 which is higher than the ideal 1.67. This higher Ca/P ratio is attributed to the higher penetration depth of the MeV technique used.

  6. Patterned microstructures formed with MeV Au implantation in Si(1 0 0)

    International Nuclear Information System (INIS)

    Rout, Bibhudutta; Greco, Richard R.; Zachry, Daniel P.; Dymnikov, Alexander D.; Glass, Gary A.

    2006-01-01

    Energetic (MeV) Au implantation in Si(1 0 0) (n-type) through masked micropatterns has been used to create layers resistant to KOH wet etching. Microscale patterns were produced in PMMA and SU(8) resist coatings on the silicon substrates using P-beam writing and developed. The silicon substrates were subsequently exposed using 1.5 MeV Au 3+ ions with fluences as high as 1 x 10 16 ions/cm 2 and additional patterns were exposed using copper scanning electron microscope calibration grids as masks on the silicon substrates. When wet etched with KOH microstructures were created in the silicon due to the resistance to KOH etching cause by the Au implantation. The process of combining the fabrication of masked patterns with P-beam writing with broad beam Au implantation through the masks can be a promising, cost-effective process for nanostructure engineering with Si

  7. Improved generation of single nitrogen-vacancy centers in diamond by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Naydenov, Boris; Beck, Johannes; Steiner, Matthias; Balasubramanian, Gopalakrishnan; Jelezko, Fedor; Wrachtrup, Joerg [3. Institute of Physics, University of Stuttgart (Germany); Richter, Vladimir; Kalish, Rafi [Solid State Institute, Technion City, Haifa (Israel); Achard, Jocelyn [Laboratoire d' Ingenieurie des Materiaux et des Hautes Pressions, CNRS, Villetaneuse (France)

    2010-07-01

    Nitrogen-vacancy (NV) centers in diamond have recently attracted the attention of many research groups due to their possible application as quantum bits (qubits), ultra low magnetic field sensors and single photon sources. These color centers can be produced by nitrogen ion implantation, although the yield is usually below 5 % at low ion energies. Here we report an increase of the NV production efficiency by subsequently implanting carbon ions in the area of implanted nitrogen ions. This method improves the production yield by more than 50 %. We also show that very low nitrogen concentration (below 0.1 ppb) in diamond can be determined by converting the intrinsic nitrogen atoms to single NV centers and detecting the latter using a confocal microscope.

  8. Molecular dynamics simulation of boron implanted into diamond (0 0 1) 2 x 1 reconstruction surface

    International Nuclear Information System (INIS)

    Li Rongbin; Dai Yongbin; Hu Xiaojun; Sheng Heshen; He Xianchang

    2003-01-01

    Molecular dynamic simulations, utilizing the Tersoff many-body potential, are used to investigate the microscopic processes of a single boron atom with energy of 500 eV implanted into the diamond (0 0 1) 2 x 1 reconstruction surface. The lifetime of thermal spike created by B bombardment is about 0.18 ps by calculating the variation of the mean coordination numbers with time. The formation of the split-interstitial composed of projectile and lattice atom (B-C) is observed. The total potential energy of the system decreases about 0.56 eV with a stable B split-interstitial in diamond. The lattice relaxations in the diamond (0 0 1) 2 x 1 reconstruction surface or near surface of simulated have been discussed. The outermost layer atoms tend to move inward, and the other atoms move outward. The interplanar distance between the outermost layer and the second layer has been shortened by 15% compared with its starting interplanar distance. Stress distribution in the calculated diamond configuration is inhomogeneous. After boron implanted into diamond with the energy of 500 eV, there is an excess of compressively stressed atoms in the lattice, which induces the total stress being compressive

  9. Nanostructured diamond film deposition on curved surfaces of metallic temporomandibular joint implant

    Energy Technology Data Exchange (ETDEWEB)

    Fries, Marc D; Vohra, Yogesh K [Department of Physics, University of Alabama at Birmingham (UAB), Birmingham, AL (United States)

    2002-10-21

    Microwave plasma chemical vapour deposition of nanostructured diamond films was carried out on curved surfaces of Ti-6Al-4V alloy machined to simulate the shape of a temporomandibular joint (TMJ) dental implant. Raman spectroscopy shows that the deposited films are uniform in chemical composition along the radius of curvature of the TMJ condyle. Thin film x-ray diffraction reveals an interfacial carbide layer and nanocrystalline diamond grains in this coating. Nanoindentation hardness measurements show an ultra-hard coating with a hardness value of 60{+-}5 GPa averaged over three samples. (rapid communication)

  10. Ferromagnetism appears in nitrogen implanted nanocrystalline diamond films

    Czech Academy of Sciences Publication Activity Database

    Remeš, Zdeněk; Sun, S. J.; Varga, M.; Chou, H.; Hsu, H.S.; Kromka, A.; Horák, Pavel

    2015-01-01

    Roč. 394, Nov (2015), s. 477-480 ISSN 0304-8853 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(CZ) LD14011 EU Projects: European Commission(XE) COST Action MP1202 HINT Institutional support: RVO:68378271 ; RVO:61389005 Keywords : diamond * nonmetallic ferromagnetic materials * fine-particle systems * nanocrystalline materials Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.357, year: 2015

  11. EPR and cathodoluminescence of defects in diamond irradiated by nickel ions with energy of 335 MeV

    International Nuclear Information System (INIS)

    Varichenko, V.S.; Martinovich, V.A.; Filipp, A.Z.; Didyk, A.Yu.

    1995-01-01

    Defect production in natural diamond irradiated by 335 MeV Ni ions within a dose range of 5·10 12 - 5·10 14 cm -2 has been studied by EPR and cathodoluminescence techniques. It is shown that the high energy ion irradiation leads to the appearance of modified track like one-dimensional structures with nontetrahedral coordination of atoms. A mechanism of microwave conductivity in modified structures of irradiated samples discussed in frame of a model of mobile quasi-particles of corresponding paramagnetic centres. Peculiarities of concentration distributions of paramagnetic centres corresponding to ion-modified structures and cathodoluminescence centres through the irradiated layer are connected with track channeling and stopped of a part of ions because of their elastic collisions with lattice atoms during ion stopping. (author). 18 refs., 5 figs

  12. Optical absorption analysis on diamond crystals modified by H2+ implantation and subsequent annealing

    International Nuclear Information System (INIS)

    Ma, Z.Q.; Naramoto, Hiroshi; Aoki, Yasushi; Yamamoto, Shunya; Takeshita, Hidefumi; Goppelt-Langer, P.C.

    1995-01-01

    The optical absorption analysis on synthetic diamond irradiated by molecular hydrogen ions (H 2 + ) with 40 keV, 10 15 -10 17 H/cm 2 , at 100 K, showed that the absorption coefficient (α) of modified layer in UV-VIS range was increased with the implanted dose and decreased with thermal annealing. While its relative optical band gap (E r,opt ) was decreased with ion fluence and proportional to the annealing temperature. The possible microstructure of atomic coordination for as-implanted and subsequent annealing samples was discussed tentatively. In addition the optical inhomogeneity of the type Ib diamond has been revealed by absorption topograph at λ=430 nm. (author)

  13. Ion-implantation of erbium into the nanocrystalline diamond thin films

    Czech Academy of Sciences Publication Activity Database

    Nekvindová, P.; Babchenko, Oleg; Cajzl, J.; Kromka, Alexander; Macková, Anna; Malinský, Petr; Oswald, Jiří; Prajzler, Václav; Remeš, Zdeněk; Varga, Marián

    2016-01-01

    Roč. 18, 7-8 (2016), s. 679-684 ISSN 1454-4164 R&D Projects: GA ČR(CZ) GA14-05053S; GA MŠk(CZ) LM2011019 Institutional support: RVO:68378271 ; RVO:61389005 Keywords : nanocrystalline diamond * optical waveguides * erbium * luminescence * ion implantation * CVD Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.449, year: 2016

  14. Structure carbon materials: clusters, nanotubes, ion-implant polymers and diamonds

    International Nuclear Information System (INIS)

    Lapchuk, N.M.; Odzhaev, V.B.; Poklonskij, N.A.; Sviridov, D.V.

    2009-01-01

    The paper summarizes the series of research works dealing with the physics of nanostructured carbon materials, which were awarded a Sevchenko Prize in 2008. The paper considers the mechanism of synthesis of 3D carbon nanospecies and their nanomechanics, magnetic properties of ion-implanted diamonds, as well as the regularities of formation of novel forms of amorphous hydrogenated carbon and metal-carbon nanocomposites via ion bombardment of polymers, as well as electronic, magnetic, and structural properties of ion-implanted polymers an their possible applications in micro- and nanoelectronics. (authors)

  15. The effectiveness of Ti implants as barriers to carbon diffusion in Ti implanted steel under CVD diamond deposition conditions

    International Nuclear Information System (INIS)

    Weiser, P.S.; Prawer, S.; Paterson, P.J.K.

    1993-01-01

    The growth of chemical vapour deposited (CVD) diamond onto iron based substrates complicated by preferential soot formation and carbon diffusion into the substrate [1], leading to poor quality films and poor adhesion. In the initial stages of exposure to a microwave plasma, a layer of graphite is rapidly formed on an untreated Fe based substrate. Once this graphite layer reaches a certain thickness, reasonable quality diamond nucleates and grows upon it. However, the diamond film easily delaminates from the substrate, the weak link being the graphitic layer. Following an initial success in using a TiN barrier layer to inhibit the formation of such a graphitic layer the authors report on attempts to use an implanted Ti layer for the same purpose. This work was prompted by observation that, although the TiN proved to be an extremely effective diffusion barrier, adhesion may be further enhanced by the formation of a TiC interface layer between the diamond film and the Fe substrate. 3 refs., 6 figs

  16. The effectiveness of Ti implants as barriers to carbon diffusion in Ti implanted steel under CVD diamond deposition conditions

    Energy Technology Data Exchange (ETDEWEB)

    Weiser, P S; Prawer, S [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Hoffman, A [Technion-Israel Inst. of Tech., Haifa (Israel). Dept. of Chemistry; Evan, P J [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Paterson, P J.K. [Royal Melbourne Inst. of Tech., VIC (Australia)

    1994-12-31

    The growth of chemical vapour deposited (CVD) diamond onto iron based substrates complicated by preferential soot formation and carbon diffusion into the substrate [1], leading to poor quality films and poor adhesion. In the initial stages of exposure to a microwave plasma, a layer of graphite is rapidly formed on an untreated Fe based substrate. Once this graphite layer reaches a certain thickness, reasonable quality diamond nucleates and grows upon it. However, the diamond film easily delaminates from the substrate, the weak link being the graphitic layer. Following an initial success in using a TiN barrier layer to inhibit the formation of such a graphitic layer the authors report on attempts to use an implanted Ti layer for the same purpose. This work was prompted by observation that, although the TiN proved to be an extremely effective diffusion barrier, adhesion may be further enhanced by the formation of a TiC interface layer between the diamond film and the Fe substrate. 3 refs., 6 figs.

  17. The effectiveness of Ti implants as barriers to carbon diffusion in Ti implanted steel under CVD diamond deposition conditions

    Energy Technology Data Exchange (ETDEWEB)

    Weiser, P.S.; Prawer, S. [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Hoffman, A. [Technion-Israel Inst. of Tech., Haifa (Israel). Dept. of Chemistry; Evan, P.J. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Paterson, P.J.K. [Royal Melbourne Inst. of Tech., VIC (Australia)

    1993-12-31

    The growth of chemical vapour deposited (CVD) diamond onto iron based substrates complicated by preferential soot formation and carbon diffusion into the substrate [1], leading to poor quality films and poor adhesion. In the initial stages of exposure to a microwave plasma, a layer of graphite is rapidly formed on an untreated Fe based substrate. Once this graphite layer reaches a certain thickness, reasonable quality diamond nucleates and grows upon it. However, the diamond film easily delaminates from the substrate, the weak link being the graphitic layer. Following an initial success in using a TiN barrier layer to inhibit the formation of such a graphitic layer the authors report on attempts to use an implanted Ti layer for the same purpose. This work was prompted by observation that, although the TiN proved to be an extremely effective diffusion barrier, adhesion may be further enhanced by the formation of a TiC interface layer between the diamond film and the Fe substrate. 3 refs., 6 figs.

  18. Abutment Coating With Diamond-Like Carbon Films to Reduce Implant-Abutment Bacterial Leakage.

    Science.gov (United States)

    Cardoso, Mayra; Sangalli, Jorgiana; Koga-Ito, Cristiane Yumi; Ferreira, Leandro Lameirão; da Silva Sobrinho, Argemiro Soares; Nogueira, Lafayette

    2016-02-01

    The influence of diamond-like carbon (DLC) films on bacterial leakage through the interface between abutments and dental implants of external hexagon (EH) and internal hexagon (IH) designs was evaluated. Film deposition was performed by plasma-enhanced chemical vapor deposition. Sets of implants and abutments (n = 30 per group, sets of 180 implants) were divided according to connection design and treatment of the abutment base: 1) no treatment (control); 2) DLC film deposition; and 3) Ag-DLC film deposition. Under sterile conditions, 1 μL Enterococcus faecalis was inoculated inside the implants, and abutments were tightened. The sets were tested for immediate external contamination, suspended in test tubes containing sterile culture broth, and followed for 5 days. Turbidity of the broth indicated bacterial leakage. At the end of the period, the abutments were removed and the internal content of the implants was collected with paper points and plated in Petri dishes. After 24-hour incubation, they were assessed for bacterial viability and colony-forming unit counting. Bacterial leakage was analyzed by χ(2) and Fisher exact tests (α = 5%). The percentage of bacterial leakage was 16.09% for EH implants and 80.71% for IH implants (P DLC and Ag-DLC films do not significantly reduce the frequency of bacterial leakage and bacteria load inside the implants.

  19. High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

    Science.gov (United States)

    Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

    2018-03-01

    The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

  20. Nonlinear optical waveguides produced by MeV ion implantation in LiNbO3

    International Nuclear Information System (INIS)

    Sarkisov, S.S.; Curley, M.J.; Williams, E.K.; Ila, D.; Svetchnikov, V.L.; Zandbergen, H.W.; Zykov, G.A.; Banks, C.; Wang, J.-C.; Poker, D.B.; Hensley, D.K.

    2000-01-01

    We analyze microstructure, linear and nonlinear optical properties of planar waveguides produced by implantation of MeV Ag ions into LiNbO 3 . Linear optical properties are described by the parameters of waveguide propagation modes and optical absorption spectra. Nonlinear properties are described by the nonlinear refractive index. Operation of the implanted crystal as an optical waveguide is due to modification of the linear refractive index of the implanted region. The samples as implanted do not show any light-guiding. The implanted region has amorphous and porous microstructure with the refractive index lower than the substrate. Heat treatment of the implanted samples produces planar light-guiding layer near the implanted surface. High-resolution electron microscopy reveals re-crystallization of the host between the surface and the nuclear stopping region in the form of randomly oriented crystalline grains. They make up a light-guiding layer isolated from the bulk crystal by the nuclear stopping layer with low refractive index. Optical absorption of the sample as implanted has a peak at 430 nm. This peak is due to the surface plasmon resonance in nano-clusters of metallic silver. Heat treatment of the samples shifts the absorption peak to 545 nm. This is more likely due to the increase of the refractive index back to the value for the crystalline LiNbO 3 . The nonlinear refractive index of the samples at 532 nm (of the order of 10 -10 cm 2 W -1 ) was measured with the Z-scan technique using a picosecond laser source. Possible applications of the waveguides include ultra-fast photonic switches and modulators

  1. Si-nanoparticle synthesis using ion implantation and MeV ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Chulapakorn, T.; Wolff, M.; Primetzhofer, D.; Possnert, G. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J. [Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden); Hallen, A. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

    2015-12-15

    A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO{sub 2} matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO{sub 2} by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV {sup 127}I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Hermetic diamond capsules for biomedical implants enabled by gold active braze alloys.

    Science.gov (United States)

    Lichter, Samantha G; Escudié, Mathilde C; Stacey, Alastair D; Ganesan, Kumaravelu; Fox, Kate; Ahnood, Arman; Apollo, Nicholas V; Kua, Dunstan C; Lee, Aaron Z; McGowan, Ceara; Saunders, Alexia L; Burns, Owen; Nayagam, David A X; Williams, Richard A; Garrett, David J; Meffin, Hamish; Prawer, Steven

    2015-01-01

    As the field of biomedical implants matures the functionality of implants is rapidly increasing. In the field of neural prostheses this is particularly apparent as researchers strive to build devices that interact with highly complex neural systems such as vision, hearing, touch and movement. A retinal implant, for example, is a highly complex device and the surgery, training and rehabilitation requirements involved in deploying such devices are extensive. Ideally, such devices will be implanted only once and will continue to function effectively for the lifetime of the patient. The first and most pivotal factor that determines device longevity is the encapsulation that separates the sensitive electronics of the device from the biological environment. This paper describes the realisation of a free standing device encapsulation made from diamond, the most impervious, long lasting and biochemically inert material known. A process of laser micro-machining and brazing is described detailing the fabrication of hermetic electrical feedthroughs and laser weldable seams using a 96.4% gold active braze alloy, another material renowned for biochemical longevity. Accelerated ageing of the braze alloy, feedthroughs and hermetic capsules yielded no evidence of corrosion and no loss of hermeticity. Samples of the gold braze implanted for 15 weeks, in vivo, caused minimal histopathological reaction and results were comparable to those obtained from medical grade silicone controls. The work described represents a first account of a free standing, fully functional hermetic diamond encapsulation for biomedical implants, enabled by gold active alloy brazing and laser micro-machining. Copyright © 2015 Elsevier Ltd. All rights reserved.

  3. Quantitative analysis of swelling on annealing of hydrogen ion implanted diamond single crystals

    International Nuclear Information System (INIS)

    Kuznetsov, G.F.

    2006-01-01

    Local swelling observed upon high-temperature annealing of natural diamond single crystals implanted by 350-keV hydrogen ions with a dose of 12 10 16 cm 2 is studied. Based on room-temperature measurements, Griffith cracking criterion in combination with gas law, model quantitative calculations of the swelling size and the amount of hydrogen molecules in a swelling have been carried out for the first time. At room temperature, T 1 293 K, the amount of local elastic stresses in the upper layer of the diamond is counterbalanced by inner hydrogen pressure. Behavior of the gas bubbles with the annealing temperature increase up to 1693 K and repeated annealing at a temperature of 1743 K has been calculated [ru

  4. Monitoring the evolution of boron doped porous diamond electrode on flexible retinal implant by OCT and in vivo impedance spectroscopy

    International Nuclear Information System (INIS)

    Hébert, Clément; Cottance, Myline; Degardin, Julie; Scorsone, Emmanuel; Rousseau, Lionel; Lissorgues, Gaelle; Bergonzo, Philippe; Picaud, Serge

    2016-01-01

    Nanocrystalline Boron doped Diamond proved to be a very attractive material for neural interfacing, especially with the retina, where reduce glia growth is observed with respect to other materials, thus facilitating neuro-stimulation over long terms. In the present study, we integrated diamond microelectrodes on a polyimide substrate and investigated their performances for the development of neural prosthesis. A full description of the microfabrication of the implants is provided and their functionalities are assessed using cyclic voltammetry and electrochemical impedance spectroscopy. A porous structure of the electrode surface was thus revealed and showed promising properties for neural recording or stimulation. Using the flexible implant, we showed that is possible to follow in vivo the evolution of the electric contact between the diamond electrodes and the retina over 4 months by using electrochemical impedance spectroscopy. The position of the implant was also monitored by optical coherence tomography to corroborate the information given by the impedance measurements. The results suggest that diamond microelectrodes are very good candidates for retinal prosthesis. - Highlights: • Microfabrication of porous diamond electrode on flexible retinal implant • Electrochemical characterization of microelectrode for neural interfacing • In vivo impedance spectroscopy of retinal tissue

  5. Monitoring the evolution of boron doped porous diamond electrode on flexible retinal implant by OCT and in vivo impedance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Hébert, Clément, E-mail: clement.hebert@icn2.cat [CEA-LIST, Diamond Sensors Laboratory, Gif-sur-Yvette 91191 (France); Cottance, Myline [Université Paris-Est, ESYCOM-ESIEE Paris, Noisy le Grand (France); Degardin, Julie [INSERM, U968, Institut de la Vision, Paris (France); Scorsone, Emmanuel [CEA-LIST, Diamond Sensors Laboratory, Gif-sur-Yvette 91191 (France); Rousseau, Lionel; Lissorgues, Gaelle [Université Paris-Est, ESYCOM-ESIEE Paris, Noisy le Grand (France); Bergonzo, Philippe [CEA-LIST, Diamond Sensors Laboratory, Gif-sur-Yvette 91191 (France); Picaud, Serge [INSERM, U968, Institut de la Vision, Paris (France)

    2016-12-01

    Nanocrystalline Boron doped Diamond proved to be a very attractive material for neural interfacing, especially with the retina, where reduce glia growth is observed with respect to other materials, thus facilitating neuro-stimulation over long terms. In the present study, we integrated diamond microelectrodes on a polyimide substrate and investigated their performances for the development of neural prosthesis. A full description of the microfabrication of the implants is provided and their functionalities are assessed using cyclic voltammetry and electrochemical impedance spectroscopy. A porous structure of the electrode surface was thus revealed and showed promising properties for neural recording or stimulation. Using the flexible implant, we showed that is possible to follow in vivo the evolution of the electric contact between the diamond electrodes and the retina over 4 months by using electrochemical impedance spectroscopy. The position of the implant was also monitored by optical coherence tomography to corroborate the information given by the impedance measurements. The results suggest that diamond microelectrodes are very good candidates for retinal prosthesis. - Highlights: • Microfabrication of porous diamond electrode on flexible retinal implant • Electrochemical characterization of microelectrode for neural interfacing • In vivo impedance spectroscopy of retinal tissue.

  6. Cross-section transmission electron microscopy of the ion implantation damage in annealed diamond

    Energy Technology Data Exchange (ETDEWEB)

    Derry, T.E. [DST/NRF Centre of Excellence in Strong Materials and School of Physics, University of the Witwatersrand, Wits 2050, Johannesburg (South Africa)], E-mail: Trevor.Derry@wits.ac.za; Nshingabigwi, E.K. [DST/NRF Centre of Excellence in Strong Materials and School of Physics, University of the Witwatersrand, Wits 2050, Johannesburg (South Africa); Department of Physics, National University of Rwanda, P.O. Box 117, Huye (Rwanda); Levitt, M. [DST/NRF Centre of Excellence in Strong Materials and School of Physics, University of the Witwatersrand, Wits 2050, Johannesburg (South Africa); Neethling, J. [DST/NRF CoE-SM and Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Naidoo, S.R. [DST/NRF Centre of Excellence in Strong Materials and School of Physics, University of the Witwatersrand, Wits 2050, Johannesburg (South Africa)

    2009-08-15

    It has formerly been shown that low-damage levels, produced during the implantation doping of diamond as a semiconductor, anneal easily while high levels 'graphitize' (above about 5.2 x 10{sup 15} ions/cm{sup 2}). The difference in the defect types and their profiles, in the two cases, has never been directly observed. We have succeeded in using cross-section transmission electron microscopy to do so. The experiments were difficult because the specimens must be polished to {approx}40 {mu}m thickness, then implanted on edge and annealed, before final ion beam thinning to electron transparency. The low-damage micrographs reveal some deeply penetrating dislocations, whose existence had been predicted in earlier work.

  7. Deposition of diamond-like carbon films by plasma source ion implantation with superposed pulse

    International Nuclear Information System (INIS)

    Baba, K.; Hatada, R.

    2003-01-01

    Diamond-like carbon (DLC) films were prepared on silicon wafer substrate by plasma source ion implantation with superposed negative pulse. Methane and acetylene gases were used as working gases for plasma. A negative DC voltage and a negative pulse voltage were superposed and applied to the substrate holder. The DC voltage was changed in the range from 0 to -4 kV and the pulse voltage was changed from 0 to -18 kV. The surface of DLC films was very smooth. The deposition rate of DLC films increased with increasing in superposed DC bias voltage. Carbon ion implantation was confirmed for the DLC film deposited from methane plasma with high pulse voltage. I D /I G ratios of Raman spectroscopy were around 1.5 independent on pulse voltage. The maximum hardness of 20.3 GPa was observed for the film prepared with high DC and high pulse voltage

  8. Cross-section transmission electron microscopy of the ion implantation damage in annealed diamond

    International Nuclear Information System (INIS)

    Derry, T.E.; Nshingabigwi, E.K.; Levitt, M.; Neethling, J.; Naidoo, S.R.

    2009-01-01

    It has formerly been shown that low-damage levels, produced during the implantation doping of diamond as a semiconductor, anneal easily while high levels 'graphitize' (above about 5.2 x 10 15 ions/cm 2 ). The difference in the defect types and their profiles, in the two cases, has never been directly observed. We have succeeded in using cross-section transmission electron microscopy to do so. The experiments were difficult because the specimens must be polished to ∼40 μm thickness, then implanted on edge and annealed, before final ion beam thinning to electron transparency. The low-damage micrographs reveal some deeply penetrating dislocations, whose existence had been predicted in earlier work.

  9. Damage, trapping and desorption at the implantation of helium and deuterium in graphite, diamond and silicon carbide

    International Nuclear Information System (INIS)

    Lopez, G.A.R.

    1995-07-01

    The production, thermal stability and structure of ion induced defects have been studied by Rutherford backscattering in channeling geometry for the implantation of helium and deuterium in graphite, diamond and silicon carbide with energies of 8 and 20 keV. At the implantation of deuterium and helium ions more defects were measured in graphite than in diamond or silicon carbide at equal experimental conditions. This is due to increased backscattering in graphite, which is caused by the splitting and tilting of crystallites and a local reordering of lattice atoms around defects. At 300 K, Helium produces more defects in all three materials than deuterium with equal depth distribution of defects. The ratio of the defects produced by helium and deuterium agrees very well with the corresponding ratio of the energy deposited in nuclear collisions. In graphite, only small concentrations of deuterium induced defects anneal below 800 K, while in diamond small concentrations of deuterium as well as of helium induced defects anneal mostly below 800 K. This annealing behavior is considered to be due to recombination of point defects. The buildup of helium and deuterium in graphite is different. The trapping of deuterium proceeds until saturation is reached, while in the case of helium trapping is interrupted by flaking. In diamond, deuterium as well as helium are trapped almost completely until at higher fluences reemission starts and saturation is reached. Two desorption mechanisms were identified for the thermal desorption of helium from base-oriented graphite. Helium implanted at low fluences desorbs diffusing to the surface, while for the implantation of high fluences the release of helium due to blistering dominates. The desorption of deuterium from graphite and diamond shows differences. While in graphite the desorption starts already at 800 K, in diamond up to 1140 K only little desorption can be observed. These differences can be explained by the different transport

  10. Effects of high-energy (MeV) ion implantation of polyester films

    International Nuclear Information System (INIS)

    Ueno, Keiji; Matsumoto, Yasuyo; Nishimiya, Nobuyuki; Noshiro, Mitsuru; Satou, Mamoru

    1991-01-01

    The effects of high-energy ion beam irradiation on polyester (PET) films using a 3 MeV tandem-type ion beam accelerator were studied. O, Ni, Pt, and Au as ion species were irradiated at 10 14 -10 15 ions/cm 2 on 50 μm thick PET films. Physical properties and molecular structure changes were studied by the surface resistivity measurements and RBS. The surface resistivity decreases with an increase in irradiation dose. At 10 15 ions/cm 2 irradiation, the surface resistivity is 10 8 Ω/□. According to RBS and XPS analyses, some carbon and oxygen atoms in the PET are replaced by implanted ions and the -C=O bonds are destroyed easily by the ion beam. (orig.)

  11. Restoration of an electrical breakdown Terahertz emitter by 2 MeV He+ ion implantation

    International Nuclear Information System (INIS)

    Yang kang; Ma Mingwang; Chen Xiliang; Zhu Zhiyong

    2009-01-01

    The irradiation of solids by energetic particles may cause extensive displacement cascades and point defects (vacancies and interstitials), and can be widely used for material modification. In order to repair an electrical breakdown photoconductive antenna (PCA), we irradiated the (100)-oriented, low-temperature (LT) grown GaAs substrate with 10 16 /cm 2 of 2 MeV helium ions. After being implanted, electric resistance of the PCA has increased from 800 Ω to 60 ΜΩ. The irradiated PCA exhibits improvements in the output power in comparison with the electrical breakdown PCA and its signal intensity has increased from 2 nA to 8 nA. Accordingly, its output power has become more than one order of magnitude higher than that before irradiation. The frequency range of PCA has obviously improvement. (authors)

  12. Surface modification on 304 SS by plasma-immersed ion implantation to improve the adherence of a CVD diamond film

    Energy Technology Data Exchange (ETDEWEB)

    Nono, M.C.A.; Corat, E.J. (Instituto Nacional de Pesquisas Espaciais, Sao Jose dos Campos, SP (Brazil)); Ueda, M.; Stellati, C.; Barroso, J.J.; Conrad, J.R.; Shamim, M.; Fetherston, P.; Sridharan, K.

    1999-02-01

    The weak adherence of chemical vapor deposited (CVD) diamond films on steel substrates is an important factor that limits the technological applications of these materials. We are interested in enhancing the film-to-substrate adherence by using substrate surfaces with a previous modification by plasma-immersed ion implantation (PIII). In this work we present and discuss the preliminary results on phase formation, microstructure and adherence evaluations. CVD diamond films were deposited on 304 SS, the surface of which was modified by implanted carbon ions. The samples were first submitted to implantation with 30 keV carbon ions at different doses. Later, these surfaces were examined by Auger spectroscopy (SAM), scanning electron microscopy (SEM) and X-ray diffraction. We observed a metastable carbide phase formed from carbon and iron, which is considered to be a good polycrystalline material for the nucleation of CVD diamond crystals. The CVD diamond nucleation and film growth were observed by SEM and Raman spectroscopy. These results are discussed with the emphasis on the carbon diffusion barrier on the substrate surfaces. The preliminary results of diamond growth were encouraging. (orig.) 7 refs.

  13. Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs

    International Nuclear Information System (INIS)

    Usman, Muhammad; Hallen, Anders; Ghandi, Reza; Domeij, Martin

    2010-01-01

    Degradation of 4H-SiC power bipolar junction transistors (BJTs) under the influence of a high-energy helium ion beam was studied. Epitaxially grown npn BJTs were implanted with 3.0 MeV helium in the fluence range of 10 10 -10 11 cm -2 . The devices were characterized by their current-voltage (I-V) behaviour before and after the implantation, and the results showed a clear degradation of the output characteristics of the devices. Annealing these implanted devices increased the interface traps between passivation oxide and the semiconductor, resulting in an increase of base current in the low-voltage operation range.

  14. The eight modes observation in LiNbO3 induced by 3.0 MeV He+ implantation

    International Nuclear Information System (INIS)

    Wang Keming; Shi Borong; Zhou Zhuang; Wang Wei; Ding Peijun; Wang Zhonglie.

    1994-01-01

    The y-cut LiNbO 3 was implanted by 3.0 MeV He + to a dose of 2 x10 16 ions/cm 2 at liquid nitrogen temperature. The eight black and bright modes from He implanted LiNbO 3 waveguide were observed before and after rapid annealing. The refractive index profile is obtained by means of a non-stationary mode index calculation. The comparison of refractive index profile with damage profile is given. The result shows that the peak position of the refractive index profile is found to be in good agreement with the peak position of damage profile induced by 3.0 MeV He + implanted in LiNbO 3 based on transport of ions in matter (TRIM'92).(author)

  15. Analyses of Biofilm on Implant Abutment Surfaces Coating with Diamond-Like Carbon and Biocompatibility.

    Science.gov (United States)

    Huacho, Patricia Milagros Maquera; Nogueira, Marianne N Marques; Basso, Fernanda G; Jafelicci Junior, Miguel; Francisconi, Renata S; Spolidorio, Denise M P

    2017-01-01

    The aim of this study was to evaluate the surface free energy (SFE), wetting and surface properties as well as antimicrobial, adhesion and biocompatibility properties of diamond-like carbon (DLC)-coated surfaces. In addition, the leakage of Escherichia coli through the abutment-dental implant interface was also calculated. SFE was calculated from contact angle values; R a was measured before and after DLC coating. Antimicrobial and adhesion properties against E. coli and cytotoxicity of DLC with human keratinocytes (HaCaT) were evaluated. Further, the ability of DLC-coated surfaces to prevent the migration of E. coli into the external hexagonal implant interface was also evaluated. A sterile technique was used for the semi-quantitative polymerase chain reaction (semi-quantitative PCR). The surfaces showed slight decreases in cell viability (p0.05). It was concluded that DLC was shown to be a biocompatible material with mild cytotoxicity that did not show changes in R a, SFE, bacterial adhesion or antimicrobial properties and did not inhibit the infiltration of E. coli into the abutment-dental implant interface.

  16. Softening the ultra-stiff: Controlled variation of Young’s modulus in single-crystal diamond by ion implantation

    International Nuclear Information System (INIS)

    Battiato, A.; Lorusso, M.; Bernardi, E.; Picollo, F.; Bosia, F.; Ugues, D.; Zelferino, A.; Damin, A.; Baima, J.

    2016-01-01

    A combined experimental and numerical study on the variation of the elastic properties of defective single-crystal diamond is presented for the first time, by comparing nano-indentation measurements on MeV-ion-implanted samples with multi-scale modeling consisting of both ab initio atomistic calculations and meso-scale Finite Element Method (FEM) simulations. It is found that by locally introducing defects in the 2 × 10 18 –5 × 10 21  cm −3 density range, a significant reduction of Young’s modulus, as well as of density, can be induced in the diamond crystal structure without incurring in the graphitization of the material. Ab initio atomistic simulations confirm the experimental findings with a good degree of confidence. FEM simulations are further employed to verify the consistency of measured deformations with a stiffness reduction, and to derive strain and stress levels in the implanted region. Combining these experimental and numerical results, we also provide insight into the mechanism responsible for the depth dependence of the graphitization threshold in diamond. This work prospects the possibility of achieving accurate tunability of the mechanical properties of single-crystal diamond through defect engineering, with significant technological applications, e.g. the fabrication and control of the resonant frequency of diamond-based micromechanical resonators.

  17. Wireless induction coils embedded in diamond for power transfer in medical implants.

    Science.gov (United States)

    Sikder, Md Kabir Uddin; Fallon, James; Shivdasani, Mohit N; Ganesan, Kumaravelu; Seligman, Peter; Garrett, David J

    2017-08-26

    Wireless power and data transfer to medical implants is a research area where improvements in current state-of-the-art technologies are needed owing to the continuing efforts for miniaturization. At present, lithographical patterning of evaporated metals is widely used for miniature coil fabrication. This method produces coils that are limited to low micron or nanometer thicknesses leading to high impedance values and thus limiting their potential quality. In the present work we describe a novel technique, whereby trenches were milled into a diamond substrate and filled with silver active braze alloy, enabling the manufacture of small, high cross-section, low impedance microcoils capable of transferring up to 10 mW of power up to a distance of 6 mm. As a substitute for a metallic braze line used for hermetic sealing, a continuous metal loop when placed parallel and close to the coil surface reduced power transfer efficiency by 43%, but not significantly, when placed perpendicular to the microcoil surface. Encapsulation of the coil by growth of a further layer of diamond reduced the quality factor by an average of 38%, which can be largely avoided by prior oxygen plasma treatment. Furthermore, an accelerated ageing test after encapsulation showed that these coils are long lasting. Our results thus collectively highlight the feasibility of fabricating a high-cross section, biocompatible and long lasting miniaturized microcoil that could be used in either a neural recording or neuromuscular stimulation device.

  18. Tribological performance of ultrathin diamond-like carbon films prepared by plasma-based ion implantation

    International Nuclear Information System (INIS)

    Liao, J X; Li, E Q; Tian, Z; Pan, X F; Xu, J; Jin, L; Yang, H G

    2008-01-01

    Ultrathin diamond-like carbon (DLC) films with thicknesses of 5-60 nm have been prepared on Si by plasma-based ion implantation. Raman spectrum and x-ray photoelectron spectroscopy (XPS) show that these DLC films present high sp 3 /sp 2 ratios. XPS also displays that each DLC film firmly adheres to the Si substrate owing to a C-Si transition layer. Atomic force microscopy shows that the DLC films are smooth and compact with average roughness (R a ) of about 0.25 nm. Sliding friction experiments reveal that these DLC films show significantly improved tribological performance. With increase of DLC film thickness, the sp 3 /sp 2 ratio increases, the roughness decreases, the hardness increases, the adhesive wear lightens and thereby the tribological performance becomes enhanced. Also, the effects of the applied load and the reciprocating frequency on the tribological performance are discussed

  19. Generation of Nitrogen-Vacancy Center Pairs in Bulk Diamond by Molecular Nitrogen Implantation

    International Nuclear Information System (INIS)

    Zhao-Jun Gong; Xiang-Dong Chen; Cong-Cong Li; Shen Li; Bo-Wen Zhao; Fang-Wen Sun

    2016-01-01

    The coupled negatively charged nitrogen-vacancy (NV − ) center system is a promising candidate for scalable quantum information techniques. In this work, ionized nitrogen molecules are implanted into bulk diamond to generate coupled NV − center pairs. The two-photon autocorrelation measurement and optically detected magnetic resonance measurement are carried out to confirm the production of the NV − center pair. Also, both 1.3 μs decoherence time and 4.9 kHz magnetic coupling strength of the NV − center pair are measured by controlling and detecting the spin states. Along with nanoscale manipulation and detection methods, such coupled NV − centers through short distance dipole-dipole interaction would show high potential in scalable quantum information processes. (paper)

  20. Collision cascades enhanced hydrogen redistribution in cobalt implanted hydrogenated diamond-like carbon films

    International Nuclear Information System (INIS)

    Gupta, P.; Becker, H.-W.; Williams, G.V.M.; Hübner, R.; Heinig, K.-H.; Markwitz, A.

    2017-01-01

    Highlights: • This paper reports for the first time redistribution of hydrogen atoms in diamond like carbon thin films during ion implantation of low energy magnetic ions. • The results point towards new routes of controlling the composition and distribution of elements at the nanoscale within a base matrix without using any heat treatment methods. • Exploring these opportunities can lead to a new horizon of materials and device engineering needed for enabling advanced technologies and applications. - Abstract: Hydrogenated diamond-like carbon films produced by C_3H_6 deposition at 5 kV and implanted at room temperature with 30 keV Co atoms to 12 at.% show not only a bimodal distribution of Co atoms but also a massive redistribution of hydrogen in the films. Resonant nuclear reaction analysis was used to measure the hydrogen depth profiles (15N-method). Depletion of hydrogen near the surface was measured to be as low as 7 at.% followed by hydrogen accumulation from 27 to 35 at.%. A model is proposed considering the thermal energy deposited by collision cascade for thermal insulators. In this model, sufficient energy is provided for dissociated hydrogen to diffuse out of the sample from the surface and diffuse into the sample towards the interface which is however limited by the range of the incoming Co ions. At a hydrogen concentration of ∼35 at.%, the concentration gradient of the mobile unbounded hydrogen atoms is neutralised effectively stopping diffusion towards the interface. The results point towards new routes of controlling the composition and distribution of elements at the nanoscale within a base matrix without using any heat treatment methods. Exploring these opportunities can lead to a new horizon of materials and device engineering needed for enabling advanced technologies and applications.

  1. Collision cascades enhanced hydrogen redistribution in cobalt implanted hydrogenated diamond-like carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, P. [National Isotope Centre, GNS Science, Lower Hutt (New Zealand); The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington (New Zealand); Becker, H.-W. [RUBION, Ruhr-University Bochum (Germany); Williams, G.V.M. [The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington (New Zealand); Hübner, R.; Heinig, K.-H. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (Germany); Markwitz, A., E-mail: a.markwitz@gns.cri.nz [National Isotope Centre, GNS Science, Lower Hutt (New Zealand); The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington (New Zealand)

    2017-03-01

    Highlights: • This paper reports for the first time redistribution of hydrogen atoms in diamond like carbon thin films during ion implantation of low energy magnetic ions. • The results point towards new routes of controlling the composition and distribution of elements at the nanoscale within a base matrix without using any heat treatment methods. • Exploring these opportunities can lead to a new horizon of materials and device engineering needed for enabling advanced technologies and applications. - Abstract: Hydrogenated diamond-like carbon films produced by C{sub 3}H{sub 6} deposition at 5 kV and implanted at room temperature with 30 keV Co atoms to 12 at.% show not only a bimodal distribution of Co atoms but also a massive redistribution of hydrogen in the films. Resonant nuclear reaction analysis was used to measure the hydrogen depth profiles (15N-method). Depletion of hydrogen near the surface was measured to be as low as 7 at.% followed by hydrogen accumulation from 27 to 35 at.%. A model is proposed considering the thermal energy deposited by collision cascade for thermal insulators. In this model, sufficient energy is provided for dissociated hydrogen to diffuse out of the sample from the surface and diffuse into the sample towards the interface which is however limited by the range of the incoming Co ions. At a hydrogen concentration of ∼35 at.%, the concentration gradient of the mobile unbounded hydrogen atoms is neutralised effectively stopping diffusion towards the interface. The results point towards new routes of controlling the composition and distribution of elements at the nanoscale within a base matrix without using any heat treatment methods. Exploring these opportunities can lead to a new horizon of materials and device engineering needed for enabling advanced technologies and applications.

  2. Room temperature diamond-like carbon coatings produced by low energy ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Markwitz, A., E-mail: a.markwitz@gns.cri.nz [Department for Ion Beam Technologies, GNS Science, 30 Gracefield Road, Lower Hutt (New Zealand); The MacDiarmid Institute for Advanced Materials and Nanotechnology (New Zealand); Mohr, B.; Leveneur, J. [Department for Ion Beam Technologies, GNS Science, 30 Gracefield Road, Lower Hutt (New Zealand)

    2014-07-15

    Nanometre-smooth diamond-like carbon coatings (DLC) were produced at room temperature with ion implantation using 6 kV C{sub 3}H{sub y}{sup +} ion beams. Ion beam analysis measurements showed that the coatings contain no heavy Z impurities at the level of 100 ppm, have a homogeneous stoichiometry in depth and a hydrogen concentration of typically 25 at.%. High resolution TEM analysis showed high quality and atomically flat amorphous coatings on wafer silicon. Combined TEM and RBS analysis gave a coating density of 3.25 g cm{sup −3}. Raman spectroscopy was performed to probe for sp{sup 2}/sp{sup 3} bonds in the coatings. The results indicate that low energy ion implantation with 6 kV produces hydrogenated amorphous carbon coatings with a sp{sup 3} content of about 20%. Results highlight the opportunity of developing room temperature DLC coatings with ion beam technology for industrial applications.

  3. Direct observation and mechanism for enhanced field emission sites in platinum ion implanted/post-annealed ultrananocrystalline diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Panda, Kalpataru, E-mail: panda@afm.eei.eng.osaka-u.ac.jp, E-mail: phy.kalpa@gmail.com; Inami, Eiichi; Sugimoto, Yoshiaki [Graduate School of Engineering, Osaka University, 2-1, Yamada-Oka, Suita, Osaka 565-0871 (Japan); Sankaran, Kamatchi J.; Tai, Nyan Hwa [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, I-Nan, E-mail: inanlin@mail.tku.edu.tw [Department of Physics, Tamkang University, Tamsui 251, Taiwan (China)

    2014-10-20

    Enhanced electron field emission (EFE) properties for ultrananocrystalline diamond (UNCD) films upon platinum (Pt) ion implantation and subsequent post-annealing processes is reported, viz., low turn-on field of 4.17 V/μm with high EFE current density of 5.08 mA/cm{sup 2} at an applied field of 7.0 V/μm. Current imaging tunneling spectroscopy (CITS) mode in scanning tunneling spectroscopy directly revealed the increased electron emission sites density for Pt ion implanted/post-annealed UNCD films than the pristine one. The high resolution CITS mapping and local current–voltage characteristic curves demonstrated that the electrons are dominantly emitted from the diamond grain boundaries and Pt nanoparticles.

  4. Direct observation and mechanism for enhanced field emission sites in platinum ion implanted/post-annealed ultrananocrystalline diamond films

    International Nuclear Information System (INIS)

    Panda, Kalpataru; Inami, Eiichi; Sugimoto, Yoshiaki; Sankaran, Kamatchi J.; Tai, Nyan Hwa; Lin, I-Nan

    2014-01-01

    Enhanced electron field emission (EFE) properties for ultrananocrystalline diamond (UNCD) films upon platinum (Pt) ion implantation and subsequent post-annealing processes is reported, viz., low turn-on field of 4.17 V/μm with high EFE current density of 5.08 mA/cm 2 at an applied field of 7.0 V/μm. Current imaging tunneling spectroscopy (CITS) mode in scanning tunneling spectroscopy directly revealed the increased electron emission sites density for Pt ion implanted/post-annealed UNCD films than the pristine one. The high resolution CITS mapping and local current–voltage characteristic curves demonstrated that the electrons are dominantly emitted from the diamond grain boundaries and Pt nanoparticles.

  5. Coating dental implant abutment screws with diamondlike carbon doped with diamond nanoparticles: the effect on maintaining torque after mechanical cycling.

    Science.gov (United States)

    Lepesqueur, Laura Soares; de Figueiredo, Viviane Maria Gonçalves; Ferreira, Leandro Lameirão; Sobrinho, Argemiro Soares da Silva; Massi, Marcos; Bottino, Marco Antônio; Nogueira Junior, Lafayette

    2015-01-01

    To determine the effect of maintaining torque after mechanical cycling of abutment screws that are coated with diamondlike carbon and coated with diamondlike carbon doped with diamond nanoparticles, with external and internal hex connections. Sixty implants were divided into six groups according to the type of connection (external or internal hex) and the type of abutment screw (uncoated, coated with diamondlike carbon, and coated with diamondlike carbon doped with diamond nanoparticles). The implants were inserted into polyurethane resin and crowns of nickel chrome were cemented on the implants. The crowns had a hole for access to the screw. The initial torque and the torque after mechanical cycling were measured. The torque values maintained (in percentages) were evaluated. Statistical analysis was performed using one-way analysis of variance and the Tukey test, with a significance level of 5%. The largest torque value was maintained in uncoated screws with external hex connections, a finding that was statistically significant (P = .0001). No statistically significant differences were seen between the groups with and without coating in maintaining torque for screws with internal hex connections (P = .5476). After mechanical cycling, the diamondlike carbon with and without diamond doping on the abutment screws showed no improvement in maintaining torque in external and internal hex connections.

  6. Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs

    Energy Technology Data Exchange (ETDEWEB)

    Usman, Muhammad; Hallen, Anders; Ghandi, Reza; Domeij, Martin, E-mail: musman@kth.s [Microelectronics and Applied Physics, School of Communication and Information Technology, Royal Institute of Technology (KTH), Electrum 229, 16440 Kista (Sweden)

    2010-11-01

    Degradation of 4H-SiC power bipolar junction transistors (BJTs) under the influence of a high-energy helium ion beam was studied. Epitaxially grown npn BJTs were implanted with 3.0 MeV helium in the fluence range of 10{sup 10}-10{sup 11} cm{sup -2}. The devices were characterized by their current-voltage (I-V) behaviour before and after the implantation, and the results showed a clear degradation of the output characteristics of the devices. Annealing these implanted devices increased the interface traps between passivation oxide and the semiconductor, resulting in an increase of base current in the low-voltage operation range.

  7. Diamond-like carbon coatings with zirconium-containing interlayers for orthopedic implants.

    Science.gov (United States)

    Choudhury, Dipankar; Lackner, Juergen; Fleming, Robert A; Goss, Josh; Chen, Jingyi; Zou, Min

    2017-04-01

    Six types of diamond-like carbon (DLC) coatings with zirconium (Zr)-containing interlayers on titanium alloy (Ti-6Al-4V) were investigated for improving the biotribological performance of orthopedic implants. The coatings consist of three layers: above the substrate a layer stack of 32 alternating Zr and ZrN sublayers (Zr:ZrN), followed by a layer comprised of Zr and DLC (Zr:DLC), and finally a N-doped DLC layer. The Zr:ZrN layer is designed for increasing load carrying capacity and corrosion resistance; the Zr:DLC layer is for gradual transition of stress, thus enhancing layer adhesion; and the N-doped DLC layer is for decreasing friction, squeaking noises and wear. Biotribological experiments were performed in simulated body fluid employing a ball-on-disc contact with a Si 3 N 4 ball and a rotational oscillating motion to mimic hip motion in terms of gait angle, dynamic contact pressures, speed and body temperature. The results showed that the Zr:DLC layer has a substantial influence on eliminating delamination of the DLC from the substrates. The DLC/Si 3 N 4 pairs significantly reduced friction coefficient, squeaking noise and wear of both the Si 3 N 4 balls and the discs compared to those of the Ti-6Al-4V/Si 3 N 4 pair after testing for a duration that is equivalent to one year of hip motion in vivo. Copyright © 2017 Elsevier Ltd. All rights reserved.

  8. Monte Carlo simulation of channeled and random profiles of heavy ions implanted in silicon at high energy (1.2 MeV)

    International Nuclear Information System (INIS)

    Mazzone, A.M.

    1987-01-01

    In order to study channeling effects and implants of heavy ions with energy of few MeV in silicon, ion distributions are calculated with a Monte Carlo method for axial [(001) axis], planar, and nominally random directions for As + and P + ions implanted into silicon with energies in the range 100 keV to 2 MeV. The calculation indicates an appreciable channeling at the higher energy only for the (001) axis and the (110) planes. For heavy ions with energy in the MeV range the subsidence of channeling into major channels and the disappearance of minor channels are shown

  9. Biofunctionalization of scaffold material with nano-scaled diamond particles physisorbed with angiogenic factors enhances vessel growth after implantation.

    Science.gov (United States)

    Schimke, Magdalena M; Stigler, Robert; Wu, Xujun; Waag, Thilo; Buschmann, Peter; Kern, Johann; Untergasser, Gerold; Rasse, Michael; Steinmüller-Nethl, Doris; Krueger, Anke; Lepperdinger, Günter

    2016-04-01

    Biofunctionalized scaffold facilitates complete healing of large defects. Biological constraints are induction and ingrowth of vessels. Angiogenic growth factors such as vascular endothelial growth factor or angiopoietin-1 can be bound to nano-scaled diamond particles. Corresponding bioactivities need to be examined after biofunctionalization. We therefore determined the physisorptive capacity of distinctly manufactured, differently sized nDP and the corresponding activities of bound factors. The properties of biofunctionalized nDPs were investigated on cultivated human mesenchymal stem cells and on the developing chicken embryo chorio-allantoic membrane. Eventually porous bone substitution material was coated with nDP to generate an interface that allows biofactor physisorption. Angiopoietin-1 was applied shortly before scaffold implantation into an osseous defect in sheep calvaria. Biofunctionalized scaffolds exhibited significantly increased rates of angiogenesis already one month after implantation. Conclusively, nDP can be used to ease functionalization of synthetic biomaterials. With the advances in nanotechnology, many nano-sized materials have been used in the biomedical field. This is also true for nano-diamond particles (nDP). In this article, the authors investigated the physical properties of functionalized nano-diamond particles in both in-vitro and in-vivo settings. The positive findings would help improve understanding of these nanomaterials in regenerative medicine. Copyright © 2015 Elsevier Inc. All rights reserved.

  10. Effect of MeV energy He and N pre-implantation on the formation of porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Manuaba, A. E-mail: manu@rmki.kfki.hu; Paszti, F.; Ortega, C.; Grosman, A.; Horvath, Z.E.; Szilagyi, E.; Khanh, N.Q.; Vickridge, I

    2001-06-01

    The effects of MeV energy He and N pre-implantation of Si substrate on the structure of porous silicon formed by anodic etching were studied by measuring the depth profiles of {sup 15}N decorating the pores walls. Radiation damage was recovered by annealing after the implantation. It was found that the He implant accelerates the etching process, probably due to the bubbles or the remaining lattice damage. At a dose of 8x10{sup 16} ions/cm{sup 2} the He containing layer was formed with a significantly enhanced porosity due to the contribution of the large-sized bubbles. At the highest dose of 32.5x10{sup 16} ions/cm{sup 2} flaking took place during the anodic etching. In contrast to He, N stopped the anodic etching at a depth of critical N concentration of {approx}0.9 at.%. For the lowest implantation dose, where the peak concentration was below this limit, the pores propagate through the implanted layer with an enhanced speed.

  11. Effect of MeV energy He and N pre-implantation on the formation of porous silicon

    International Nuclear Information System (INIS)

    Manuaba, A.; Paszti, F.; Ortega, C.; Grosman, A.; Horvath, Z.E.; Szilagyi, E.; Khanh, N.Q.; Vickridge, I.

    2001-01-01

    The effects of MeV energy He and N pre-implantation of Si substrate on the structure of porous silicon formed by anodic etching were studied by measuring the depth profiles of 15 N decorating the pores walls. Radiation damage was recovered by annealing after the implantation. It was found that the He implant accelerates the etching process, probably due to the bubbles or the remaining lattice damage. At a dose of 8x10 16 ions/cm 2 the He containing layer was formed with a significantly enhanced porosity due to the contribution of the large-sized bubbles. At the highest dose of 32.5x10 16 ions/cm 2 flaking took place during the anodic etching. In contrast to He, N stopped the anodic etching at a depth of critical N concentration of ∼0.9 at.%. For the lowest implantation dose, where the peak concentration was below this limit, the pores propagate through the implanted layer with an enhanced speed

  12. Nuclear techniques of analysis in diamond synthesis and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Jamieson, D. N.; Prawer, S.; Gonon, P.; Walker, R.; Dooley, S.; Bettiol, A.; Pearce, J. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Nuclear techniques of analysis have played an important role in the study of synthetic and laser annealed diamond. These measurements have mainly used ion beam analysis with a focused MeV ion beam in a nuclear microprobe system. A variety of techniques have been employed. One of the most important is nuclear elastic scattering, sometimes called non-Rutherford scattering, which has been used to accurately characterise diamond films for thickness and composition. This is possible by the use of a database of measured scattering cross sections. Recently, this work has been extended and nuclear elastic scattering cross sections for both natural boron isotopes have been measured. For radiation damaged diamond, a focused laser annealing scheme has been developed which produces near complete regrowth of MeV phosphorus implanted diamonds. In the laser annealed regions, proton induced x-ray emission has been used to show that 50 % of the P atoms occupy lattice sites. This opens the way to produce n-type diamond for microelectronic device applications. All these analytical applications utilize a focused MeV microbeam which is ideally suited for diamond analysis. This presentation reviews these applications, as well as the technology of nuclear techniques of analysis for diamond with a focused beam. 9 refs., 6 figs.

  13. Nuclear techniques of analysis in diamond synthesis and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Jamieson, D N; Prawer, S; Gonon, P; Walker, R; Dooley, S; Bettiol, A; Pearce, J [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    Nuclear techniques of analysis have played an important role in the study of synthetic and laser annealed diamond. These measurements have mainly used ion beam analysis with a focused MeV ion beam in a nuclear microprobe system. A variety of techniques have been employed. One of the most important is nuclear elastic scattering, sometimes called non-Rutherford scattering, which has been used to accurately characterise diamond films for thickness and composition. This is possible by the use of a database of measured scattering cross sections. Recently, this work has been extended and nuclear elastic scattering cross sections for both natural boron isotopes have been measured. For radiation damaged diamond, a focused laser annealing scheme has been developed which produces near complete regrowth of MeV phosphorus implanted diamonds. In the laser annealed regions, proton induced x-ray emission has been used to show that 50 % of the P atoms occupy lattice sites. This opens the way to produce n-type diamond for microelectronic device applications. All these analytical applications utilize a focused MeV microbeam which is ideally suited for diamond analysis. This presentation reviews these applications, as well as the technology of nuclear techniques of analysis for diamond with a focused beam. 9 refs., 6 figs.

  14. Nuclear techniques of analysis in diamond synthesis and annealing

    International Nuclear Information System (INIS)

    Jamieson, D. N.; Prawer, S.; Gonon, P.; Walker, R.; Dooley, S.; Bettiol, A.; Pearce, J.

    1996-01-01

    Nuclear techniques of analysis have played an important role in the study of synthetic and laser annealed diamond. These measurements have mainly used ion beam analysis with a focused MeV ion beam in a nuclear microprobe system. A variety of techniques have been employed. One of the most important is nuclear elastic scattering, sometimes called non-Rutherford scattering, which has been used to accurately characterise diamond films for thickness and composition. This is possible by the use of a database of measured scattering cross sections. Recently, this work has been extended and nuclear elastic scattering cross sections for both natural boron isotopes have been measured. For radiation damaged diamond, a focused laser annealing scheme has been developed which produces near complete regrowth of MeV phosphorus implanted diamonds. In the laser annealed regions, proton induced x-ray emission has been used to show that 50 % of the P atoms occupy lattice sites. This opens the way to produce n-type diamond for microelectronic device applications. All these analytical applications utilize a focused MeV microbeam which is ideally suited for diamond analysis. This presentation reviews these applications, as well as the technology of nuclear techniques of analysis for diamond with a focused beam. 9 refs., 6 figs

  15. Silver nanoparticle-enriched diamond-like carbon implant modification as a mammalian cell compatible surface with antimicrobial properties

    Science.gov (United States)

    Gorzelanny, Christian; Kmeth, Ralf; Obermeier, Andreas; Bauer, Alexander T.; Halter, Natalia; Kümpel, Katharina; Schneider, Matthias F.; Wixforth, Achim; Gollwitzer, Hans; Burgkart, Rainer; Stritzker, Bernd; Schneider, Stefan W.

    2016-01-01

    The implant-bone interface is the scene of competition between microorganisms and distinct types of tissue cells. In the past, various strategies have been followed to support bony integration and to prevent bacterial implant-associated infections. In the present study we investigated the biological properties of diamond-like carbon (DLC) surfaces containing silver nanoparticles. DLC is a promising material for the modification of medical implants providing high mechanical and chemical stability and a high degree of biocompatibility. DLC surface modifications with varying silver concentrations were generated on medical-grade titanium discs, using plasma immersion ion implantation-induced densification of silver nanoparticle-containing polyvinylpyrrolidone polymer solutions. Immersion of implants in aqueous liquids resulted in a rapid silver release reducing the growth of surface-bound and planktonic Staphylococcus aureus and Staphylococcus epidermidis. Due to the fast and transient release of silver ions from the modified implants, the surfaces became biocompatible, ensuring growth of mammalian cells. Human endothelial cells retained their cellular differentiation as indicated by the intracellular formation of Weibel-Palade bodies and a high responsiveness towards histamine. Our findings indicate that the integration of silver nanoparticles into DLC prevents bacterial colonization due to a fast initial release of silver ions, facilitating the growth of silver susceptible mammalian cells subsequently. PMID:26955791

  16. Transition Metal Ion Implantation into Diamond-Like Carbon Coatings: Development of a Base Material for Gas Sensing Applications

    Directory of Open Access Journals (Sweden)

    Andreas Markwitz

    2015-01-01

    Full Text Available Micrometre thick diamond-like carbon (DLC coatings produced by direct ion deposition were implanted with 30 keV Ar+ and transition metal ions in the lower percentage (<10 at.% range. Theoretical calculations showed that the ions are implanted just beneath the surface, which was confirmed with RBS measurements. Atomic force microscope scans revealed that the surface roughness increases when implanted with Ar+ and Cu+ ions, whereas a smoothing of the surface from 5.2 to 2.7 nm and a grain size reduction from 175 to 93 nm are measured for Ag+ implanted coatings with a fluence of 1.24×1016 at. cm−2. Calculated hydrogen and carbon depth profiles showed surprisingly significant changes in concentrations in the near-surface region of the DLC coatings, particularly when implanted with Ag+ ions. Hydrogen accumulates up to 32 at.% and the minimum of the carbon distribution is shifted towards the surface which may be the cause of the surface smoothing effect. The ion implantations caused an increase in electrical conductivity of the DLC coatings, which is important for the development of solid-state gas sensors based on DLC coatings.

  17. Mechanical and electrical properties of diamond-like carbon films deposited by plasma source ion implantation

    International Nuclear Information System (INIS)

    Baba, K.; Hatada, R.; Flege, S.; Ensinger, W.

    2009-01-01

    Diamond-like carbon (DLC) films were prepared by a plasma source ion implantation method with superposed negative pulse and negative DC voltage. Acetylene gas was used as working gas for plasma formation. A negative DC voltage and a negative pulse voltage were superposed and applied to the substrate holder. The DC voltage was changed in the range from 0 to -4.8 kV and the pulse voltage was changed from -18 to -13.2 kV. The films were annealed in the range of 200-450 deg. C for 1 h. The surface morphology of the films and the film thickness were observed by atomic force microscopy and scanning electron microscopy. The film structure was characterized by Raman spectroscopy. The hardness of DLC films was evaluated by an indentation method. Measurement of the electrical resistivity was performed using a four-point probe station. Furthermore, a ball-on-disc test with 2 N load was employed to obtain information about the friction properties and sliding wear resistance of the films. The surface of the DLC films was very smooth and featureless. The deposition rate was changed with the DC voltage and pulse conditions. Integrated intensity ratios I D /I G of Raman spectroscopy and electrical resistivity of the DLC films changed with DC voltage. The electrical resistivity decreased with increasing I D /I G ratio. The I D /I G ratio was increased and the electrical resistivity was decreased with annealing temperature owing to graphitization. Very low friction coefficients around 0.05 were obtained for as-deposited films.

  18. Ion beam synthesis of IrSi3 by implantation of 2 MeV Ir ions

    International Nuclear Information System (INIS)

    Sjoreen, T.P.; Chisholm, M.F.; Hinneberg, H.J.

    1992-11-01

    Formation of a buried IrSi 3 layer in (111) oriented Si by ion implantation and annealing has been studied at an implantation energy of 2 MeV for substrate temperatures of 450--550C. Rutherford backscattering (RBS), ion channeling and cross-sectional transmission electron microscopy showed that a buried epitaxial IrSi 3 layer is produced at 550C by implanting ≥ 3.4 x 10 17 Ir/cm 2 and subsequently annealing for 1 h at 1000C plus 5 h at 1100C. At a dose of 3.4 x 10 17 Ir/cm 2 , the thickness of the layer varied between 120 and 190 nm and many large IrSi 3 precipitates were present above and below the film. Increasing the dose to 4.4 x 10 17 Ir/cm 2 improved the layer uniformity at the expense of increased lattice damage in the overlying Si. RBS analysis of layer formation as a function of substrate temperature revealed the competition between the mechanisms for optimizing surface crystallinity vs. IrSi 3 layer formation. Little apparent substrate temperature dependence was evident in the as-implanted state but after annealing the crystallinity of the top Si layer was observed to deteriorate with increasing substrate temperature while the precipitate coarsening and coalescence improved

  19. The effect of ion-beam induced strain on the nucleation density of chemical vapour deposited diamond

    International Nuclear Information System (INIS)

    Weiser, P.S.; Prawer, S.; Nugent, K.W.; Bettiol, A.A.; Kostidis, L.I.; Jamieson, D.N.

    1995-01-01

    The effect of ion implantation on the nucleation of CVD diamond on silicon and diamond substrates has been investigated. The strategy employed is to create laterally confined regions of strain in the substrates by focused MeV implantation of light ions. Raman Microscopy has been employed to obtain spatially resolved maps of the strain in these implanted regions. On diamond substrates a homo-epitaxial CVD diamond film was grown on top of both the implanted and unimplanted regions of the substrate. Raman analysis of the film grown on top of the implanted region revealed it to be under slightly tensile strain as compared to that grown on the unimplanted diamond substrate. The film deposited on the implanted portion of the diamond showed a lower fluorescence background; indicating a lower concentration of incorporated defects. These results suggest that the strain and defects in the diamond substrate material have an important influence on the quality of the homo-epitaxially grown diamond films. 6 refs., 5 figs

  20. TEM investigation of the microstructural evolution in nickel during MeV helium implantation

    International Nuclear Information System (INIS)

    Gadalla, A.A.; Jaeger, W.; Ehrhart, P.

    1986-01-01

    In a recent TEM investigation of high energy He-implanted copper the low average helium density could be understood by the observation of the coexistence of two types of vacancy agglomerates i.e. relaxed vacancy agglomerates in the form of stacking fault tetrahedra (SFT) and small bubbles. In order to arrive at a more systematic understanding of the evolution of the microstructure during high energy helium implantation we extended these TEM investigations to nickel. Of particular interest was also the minimum implantation dose necessary to precipitate bubbles that are large enough to be visible in the TEM. (orig./RK)

  1. Transverse microanalysis of high energy Ion implants

    Energy Technology Data Exchange (ETDEWEB)

    Dooley, S P; Jamieson, D N; Nugent, K W; Prawer, S [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.

  2. Transverse microanalysis of high energy Ion implants

    Energy Technology Data Exchange (ETDEWEB)

    Dooley, S.P.; Jamieson, D.N.; Nugent, K.W.; Prawer, S. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.

  3. Beam-envelope calculations of space-charge loaded beams in MeV dc ion-implantation facilities

    International Nuclear Information System (INIS)

    Urbanus, W.H.; Bannenberg, J.G.; Doorn, S.; Saris, F.W.; Koudijs, R.; Dubbelman, P.; Koelewijn, W.

    1989-01-01

    MeV dc ion accelerators are being developed that can deliver a beam current up to several hundred micro-amperes. At the low-energy part of the accelerator, the beam transport is space-charge dominated rather than emittance dominated. A system of differential equations has been derived, based on the Kapchinski-Vladimirski equations, which describe the envelope of a space-charge loaded ion beam, taking a longitudinal electrical field in an accelerating tube into account. The equations have been used to design the accelerator of a high-current 1 MV heavy-ion implantation facility. Furthermore, the design of a 2 MV accelerator is presented, which is used for analyzing techniques such as RBS and PIXE. Both facilities are based on single-ended Van de Graaff accelerators. (orig.)

  4. The emittance and brightness characteristics of negative ion sources suitable for MeV ion implantation

    International Nuclear Information System (INIS)

    Alton, G.D.

    1987-01-01

    This paper provides the description and beam properties of ion sources suitable for use with ion implantation devices. Particular emphasis is placed on the emittance and brightness properties of state-of-the-art, high intensity, negative ion sources based on the cesium ion sputter principle

  5. Diamond nanophotonics

    Directory of Open Access Journals (Sweden)

    Katja Beha

    2012-12-01

    Full Text Available We demonstrate the coupling of single color centers in diamond to plasmonic and dielectric photonic structures to realize novel nanophotonic devices. Nanometer spatial control in the creation of single color centers in diamond is achieved by implantation of nitrogen atoms through high-aspect-ratio channels in a mica mask. Enhanced broadband single-photon emission is demonstrated by coupling nitrogen–vacancy centers to plasmonic resonators, such as metallic nanoantennas. Improved photon-collection efficiency and directed emission is demonstrated by solid immersion lenses and micropillar cavities. Thereafter, the coupling of diamond nanocrystals to the guided modes of micropillar resonators is discussed along with experimental results. Finally, we present a gas-phase-doping approach to incorporate color centers based on nickel and tungsten, in situ into diamond using microwave-plasma-enhanced chemical vapor deposition. The fabrication of silicon–vacancy centers in nanodiamonds by microwave-plasma-enhanced chemical vapor deposition is discussed in addition.

  6. Effective implantation of light emitting centers by plasma immersion ion implantation and focused ion beam methods into nanosized diamond

    International Nuclear Information System (INIS)

    Himics, L.; Tóth, S.; Veres, M.; Tóth, A.; Koós, M.

    2015-01-01

    Highlights: • Characteristics of nitrogen implantation of nanodiamond using two low ion energy ion implantation methods were compared. • Formation of complex nitrogen-related defect centers was promoted by subsequent helium implantation and heat treatments. • Depth profiles of the implanted ions and the generated vacancies were determined using SRIM calculations. • The presence of nitrogen impurity was demonstrated by Fourier-transform infrared spectroscopic measurements. • A new nitrogen related band was detected in the photoluminescence spectrum of the implanted samples that was attributed to the N3 color center in nanodiamond. - Abstract: Two different implantation techniques, plasma immersion ion implantation and focused ion beam, were used to introduce nitrogen ions into detonation nanodiamond crystals with the aim to create nitrogen-vacancy related optically active centers of light emission in near UV region. Previously samples were subjected to a defect creation process by helium irradiation in both cases. Heat treatments at different temperatures (750 °C, 450 °C) were applied in order to initiate the formation of nitrogen-vacancy related complex centers and to decrease the sp 2 carbon content formed under different treatments. As a result, a relatively narrow and intensive emission band with fine structure at 2.98, 2.83 and 2.71 eV photon energies was observed in the light emission spectrum. It was assigned to the N3 complex defect center. The formation of this defect center can be expected by taking into account the relatively high dose of implanted nitrogen ions and the overlapped depth distribution of vacancies and nitrogen. The calculated depth profiles distribution for both implanted nitrogen and helium by SRIM simulation support this expectation

  7. The studies of surface properties of 1.5 MeV Si-implanted silicon by multiphonon Raman spectrum

    International Nuclear Information System (INIS)

    Huang, X.

    1995-01-01

    The surface layer of crystalline silicon implanted by 1.5 MeV Si ions with doses ranging from 1 x 10 11 to 1 x 10 15 Si + cm -2 has been studied by two-phonon Raman spectra in both the acoustical overtone region and optical overtone region. Two-phonon Raman line intensities and shifts have been used to investigate the properties in the skin layer. The experimental two-phonon Raman spectra showed a decrease in intensity for both optical and acoustical two-phonon Raman peaks and also showed shifts by different amounts in different directions depending on the particular phonons. The stress values obtained by two-phonon Raman line shifts are compared with those obtained previously by one-phonon Raman shifts. The comparison shows that the surface defects make no contribution to two-phonon Raman line shifts. The two-phonon Raman line shifts show that the surface stress increases as a function of implantation doses. (author)

  8. Diamonds for beam instrumentation

    International Nuclear Information System (INIS)

    Griesmayer, Erich

    2013-01-01

    Diamond is perhaps the most versatile, efficient and radiation tolerant material available for use in beam detectors with a correspondingly wide range of applications in beam instrumentation. Numerous practical applications have demonstrated and exploited the sensitivity of diamond to charged particles, photons and neutrons. In this paper, a brief description of a generic diamond detector is given and the interaction of the CVD diamond detector material with protons, electrons, photons and neutrons is presented. Latest results of the interaction of sCVD diamond with 14 MeV mono-energetic neutrons are shown.

  9. Defects formed during ion beam modification of diamond

    Energy Technology Data Exchange (ETDEWEB)

    Nugent, K.W.; Prawer, S.; Dooley, S.P.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Raman spectroscopy was found to be sensitive to the presence of these specific defects and also to the overall level of damage produced in the sample when diamond was implanted with doses in the range of 10{sup 16}-10{sup l8} ions/cm{sup 2} H or He with energies greater than 1 MeV. The main series of experiments discussed herein used 1x10{sup 16} -3x10{sup 17} ions/cm{sup 2} of 3.5 MeV He{sup +}. Use of a geometry in which ions were implanted into the edge of a diamond slab allowed the damage to be measured as a function of distance along the ion track by both Channeling Contrast Microscopy (CCM) and Raman spectroscopy. 1 refs., 1 fig.

  10. Defects formed during ion beam modification of diamond

    Energy Technology Data Exchange (ETDEWEB)

    Nugent, K W; Prawer, S; Dooley, S P; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    Raman spectroscopy was found to be sensitive to the presence of these specific defects and also to the overall level of damage produced in the sample when diamond was implanted with doses in the range of 10{sup 16}-10{sup l8} ions/cm{sup 2} H or He with energies greater than 1 MeV. The main series of experiments discussed herein used 1x10{sup 16} -3x10{sup 17} ions/cm{sup 2} of 3.5 MeV He{sup +}. Use of a geometry in which ions were implanted into the edge of a diamond slab allowed the damage to be measured as a function of distance along the ion track by both Channeling Contrast Microscopy (CCM) and Raman spectroscopy. 1 refs., 1 fig.

  11. High density nitrogen-vacancy sensing surface created via He{sup +} ion implantation of {sup 12}C diamond

    Energy Technology Data Exchange (ETDEWEB)

    Kleinsasser, Ed E., E-mail: edklein@uw.edu [Department of Electrical Engineering, University of Washington, Seattle, Washington 98195-2500 (United States); Stanfield, Matthew M.; Banks, Jannel K. Q. [Department of Physics, University of Washington, Seattle, Washington 98195-1560 (United States); Zhu, Zhouyang; Li, Wen-Di [HKU-Shenzhen Institute of Research and Innovation (HKU-SIRI), Shenzhen 518000 (China); Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong (China); Acosta, Victor M. [Department of Physics and Astronomy, Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106 (United States); Watanabe, Hideyuki [Correlated Electronics Group, Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1, Higashi, Tsukuba, Ibaraki 305-8565 (Japan); Itoh, Kohei M. [School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522 (Japan); Fu, Kai-Mei C., E-mail: kaimeifu@uw.edu [Department of Electrical Engineering, University of Washington, Seattle, Washington 98195-2500 (United States); Department of Physics, University of Washington, Seattle, Washington 98195-1560 (United States)

    2016-05-16

    We present a promising method for creating high-density ensembles of nitrogen-vacancy centers with narrow spin-resonances for high-sensitivity magnetic imaging. Practically, narrow spin-resonance linewidths substantially reduce the optical and RF power requirements for ensemble-based sensing. The method combines isotope purified diamond growth, in situ nitrogen doping, and helium ion implantation to realize a 100 nm-thick sensing surface. The obtained 10{sup 17 }cm{sup −3} nitrogen-vacancy density is only a factor of 10 less than the highest densities reported to date, with an observed 200 kHz spin resonance linewidth over 10 times narrower.

  12. Formation of slab waveguides in eulytine type BGO and CaF{sub 2} crystals by implantation of MeV nitrogen ions

    Energy Technology Data Exchange (ETDEWEB)

    Banyasz, I., E-mail: bakonyjako@yahoo.es [Department of Crystal Physics, Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Berneschi, S. [Centro Studi e Ricerche ' Enrico Fermi' , Piazza del Viminale 2, 00184 Roma (Italy); MDF-Lab, ' ' Nello Carrara' ' Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Khanh, N.Q.; Lohner, T. [Research Institute for Technical Physics and Materials Science of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Lengyel, K. [Department of Crystal Physics, Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Fried, M. [Research Institute for Technical Physics and Materials Science of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Peter, A. [Department of Crystal Physics, Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Petrik, P.; Zolnai, Z. [Research Institute for Technical Physics and Materials Science of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Watterich, A. [Department of Crystal Physics, Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Nunzi-Conti, G.; Pelli, S.; Righini, G.C. [MDF-Lab, ' ' Nello Carrara' ' Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy)

    2012-09-01

    Ion implantation, compared with other waveguide fabrication methods, has some unique advantages. It has proved to be a universal technique for producing waveguides in most optical materials. The authors of the present article reported fabrication of channel and slab waveguides in an Erbium-doped tungsten tellurite glass by implantation of MeV energy N{sup +} ions. The present article reports successful adaptation of the same technique to the fabrication of slab waveguides in eulytine type bismuth germanate (BGO) and CaF{sub 2} crystals. This is the first report on successful waveguide fabrication in these materials using 3.5 MeV N{sup +} ions at implanted fluences between 5 Multiplication-Sign 10{sup 15} and 4 Multiplication-Sign 10{sup 16} ions/cm{sup 2}. Spectroscopic ellipsometric measurements revealed the existence of guiding structures in both materials. M-line spectroscopic measurements indicated guiding effect in the as-implanted BGO up to 1550 nm and up to 980 nm in the as-implanted CaF{sub 2}. Ion implantation induced the appearance of three peaks in the UV/Vis absorption spectrum of CaF{sub 2}, that can be attributed to colour centres.

  13. Scientific Fundamentals and Technological Development of Novel Biocompatible/Corrosion Resistant Ultrananocrystalline Diamond (UNCD) Coating Enabling Next Generation Superior Metal-Based Dental Implants

    Science.gov (United States)

    Kang, Karam

    Current Ti-based dental implants exhibit failure (2-10%), due to various mechanisms, including chemical corrosion of the surface of the TiO2 naturally covered Ti-based implants. This thesis focused on developing a unique biocompatible/bio-inert/corrosion resistant/low cost Ultrananocrystalline Diamond (UNCD) coating (with 3-5 nm grain size) for encapsulation of Tibased micro-implants to potentially eliminate the corrosion/mechanical induced failure of current commercial Ti-based dental implants. Microwave Plasma Chemical Vapor Deposition (MPCVD) and Hot Filament Chemical Vapor Deposition (HFCVD) processes were used to grow UNCD coatings. The surface topography and chemistry of UNCD coatings were characterized using scanning electron microscopy (SEM), Raman, and X-ray photoelectron spectroscopies (XPS) respectively. In conclusion, this thesis contributed to establish the optimal conditions to grow UNCD coatings on the complex 3-D geometry of Ti-based micro-implants, with geometry similar to real implants, relevant to developing UNCD-coated Ti-based dental implants with superior mechanical/chemical performance than current Ti-based implants.

  14. Optical, structural, and chemical properties of CR-39 implanted with 5.2 MeV doubly charged carbon ions

    Science.gov (United States)

    Ali, Dilawar; Butt, M. Z.; Ishtiaq, Mohsin; Waqas Khaliq, M.; Bashir, Farooq

    2016-11-01

    Poly-allyl-diglycol-carbonate (CR-39) specimens were irradiated with 5.2 MeV doubly charged carbon ions using Pelletron accelerator. Ion dose was varied from 5 × 1013 to 5 × 1015 ions cm-2. Optical, structural, and chemical properties were investigated by UV-vis spectroscopy, x-ray diffractometer, and FTIR/Raman spectroscopy, respectively. It was found that optical absorption increases with increasing ion dose. Absorption edge shifts from UV region to visible region. The measured opacity values of pristine and ion implanted CR-39 range from 0.0519 to 4.7959 mm-1 following an exponential growth (9141%) with the increase in ion dose. The values of direct and indirect band gap energy decrease exponentially with an increase in ion dose by 59% and 71%, respectively. However, average refractive index in the visible region increases from 1.443 to 2.864 with an increase in ion dose, by 98%. A linear relation between band gap energy and crystallite size was observed. Both the number of carbon atoms in conjugation length and the number of carbon atoms per cluster increase linearly with the increase in ion dose. FTIR spectra showed that on C+2 ions irradiation, the intensity of all bands decreases gradually without appearance of any new band, indicating degradation of polymer after irradiation. Raman spectra revealed that the density of -CH2- group decreases on C+2 ions irradiation. However, the structure of CR-39 is completely destroyed on irradiation with ion dose 1 × 1015 and 5 × 1015 ions cm-2.

  15. Exfoliation of GaAs caused by MeV 1H and 4He ion implantation at left angle 100 right angle , left angle 110 right angle axial and random orientations

    International Nuclear Information System (INIS)

    Rauhala, E.; Raeisaenen, J.

    1994-01-01

    The exfoliation procedure of the ion range determination of gaseous implants in single crystal GaAs is investigated. The correlation of the observed crater depth with the ion range is studied for random, left angle 100 right angle and left angle 110 right angle axial orientation high dose implantations of 1.5-2.5 MeV 1 H and 4 He ions. Depending on the experimental conditions, the crater depths corresponded to range values between the modal range and the range maximum. The observed crater depths could be related to the actual He concentration depth distributions by determining the profiles of the 4 He implants by 2.7 MeV proton backscattering. The implantation parameters affecting the exfoliation process, and especially the increase rate of the sample temperature, are investigated. The range distribution parameters for the 1.5 MeV 4 He implants are presented. ((orig.))

  16. MeV ion irradiation effects on the luminescence properties of Si-implanted SiO{sub 2}-thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chulapakorn, T.; Primetzhofer, D. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J.; Hallen, A. [Royal Institute of Technology (KTH), School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

    2016-12-15

    The effects of MeV heavy ion irradiation at varying fluence and flux on excess Si, introduced in SiO{sub 2} by keV ion implantation, are investigated by photoluminescence (PL). From the PL peak wavelength (λ) and decay lifetime (τ), two PL sources are distinguished: (i) quasi-direct recombination of excitons of Si-nanoparticles (SiNPs), appearing after thermal annealing (λ > 720 nm, τ ∝ μs), and (ii) fast-decay PL, possibly due to oxide-related defects (λ ∝ 575-690 nm, τ ∝ ns). The fast-decay PL (ii) observed before and after ion irradiation is induced by ion implantation. It is found that this fast-decay luminescence decreases for higher irradiation fluence of MeV heavy ions. After thermal annealing (forming SiNPs), the SiNP PL is reduced for samples irradiated by MeV heavy ions but found to stabilize at higher level for higher irradiation flux; the (ii) band vanishes as a result of annealing. The results are discussed in terms of the influence of electronic and nuclear stopping powers. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Radiation-induced effects in MgO single crystal by 200 keV and 1 MeV Ni ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, Ryohei; Nakai, Yoshihiro; Hamaguchi, Dai [Kyoto Inst. of Tech. (Japan); and others

    1997-03-01

    MgO(100) single crystals were implanted with 1.0 MeV and 200 keV Ni ions between 10{sup 15} and 10{sup 17} ions/cm{sup 2} at room temperature. Before and after thermal annealing the radiation damage and the lattice location of implanted Ni ions were analyzed by using Rutherford backscattering spectrometry with channeling and optical absorption measurements. For 1.0 MeV Ni ions, the disorder of Mg atoms increased slowly with ion dose near surface region, while it increased sharply and saturated with ion dose from 2x10{sup 16} ions/cm{sup 2} near ion range. The radiation damage was recovered and implanted Ni ions diffused to the whole of crystal and occupied substitutional positions after 1400degC annealing. For 200 keV Ni ions, the disorder of Mg atoms increased with dose near ion range and had a maximum at about 5x10{sup 16} ions/cm{sup 2}. This tendency agrees with the behavior of color centers obtained from optical measurements. For thermal annealing the radiation damage did not change during 500degC annealing, but the aggregate centers appeared after 300degC annealing. (author)

  18. A quantitative in vitro method to predict the adhesion lifetime of diamond-like carbon thin films on biomedical implants.

    Science.gov (United States)

    Falub, Claudiu Valentin; Thorwarth, Götz; Affolter, Christian; Müller, Ulrich; Voisard, Cyril; Hauert, Roland

    2009-10-01

    A quantitative method using Rockwell C indentation was developed to study the adhesion of diamond-like carbon (DLC) protective coatings to the CoCrMo biomedical implant alloy when immersed in phosphate-buffered saline (PBS) solution at 37 degrees C. Two kinds of coatings with thicknesses ranging from 0.5 up to 16 microns were investigated, namely DLC and DLC/Si-DLC, where Si-DLC denotes a 90 nm thick DLC interlayer containing Si. The time-dependent delamination of the coating around the indentation was quantified by means of optical investigations of the advancing crack front and calculations of the induced stress using the finite element method (FEM). The cause of delamination for both types of coatings was revealed to be stress-corrosion cracking (SCC) of the interface material. For the DLC coating a typical SCC behavior was observed, including a threshold region (60J m(-2)) and a "stage 1" crack propagation with a crack-growth exponent of 3.0, comparable to that found for ductile metals. The DLC/Si-DLC coating exhibits an SCC process with a crack-growth exponent of 3.3 and a threshold region at 470 Jm(-2), indicating an adhesion in PBS at 37 degrees C that is about eight times better than that of the DLC coating. The SCC curves were fitted to the reaction controlled model typically used to explain the crack propagation in bulk soda lime glass. As this model falls short of accurately describing all the SCC curves, limitations of its application to the interface between a brittle coating and a ductile substrate are discussed.

  19. Fabrication of planar optical waveguides by 6.0 MeV silicon ion implantation in Nd-doped phosphate glasses

    Science.gov (United States)

    Shen, Xiao-Liang; Dai, Han-Qing; Zhang, Liao-Lin; Wang, Yue; Zhu, Qi-Feng; Guo, Hai-Tao; Li, Wei-Nan; Liu, Chun-Xiao

    2018-04-01

    We report the fabrication of a planar optical waveguide by silicon ion implantation into Nd-doped phosphate glass at an energy of 6.0 MeV and a dose of 5.0 × 1014 ions/cm2. The change in the surface morphology of the glass after the implantation can be clearly observed by scanning electron microscopy. The measurement of the dark mode spectrum of the waveguide is conducted using a prism coupler at 632.8 nm. The refractive index distribution of the waveguide is reconstructed by the reflectivity calculation method. The near-field optical intensity profile of the waveguide is measured using an end-face coupling system. The waveguide with good optical properties on the glass matrix may be valuable for the application of the Nd-doped phosphate glass in integrated optical devices.

  20. Optical waveguide formed in Yb:GdCOB and Yb:YCOB crystals by 3.0MeV O{sup +} implantation

    Energy Technology Data Exchange (ETDEWEB)

    Jiao, Yang, E-mail: sdujy@163.com [College of Physics and Electronics, Shandong Normal University, Jinan 250014 (China)

    2013-07-15

    Planar optical waveguides were formed in Yb:GdCOB and Yb:YCOB crystals by 3.0 MeV O{sup +} ion implantation at fluence of 2 × 10{sup 15} ions/cm{sup 2} at room temperature, respectively. The prism coupling method was performed to characterize the dark-mode property of the waveguides. The refractive index profiles in the waveguides were reconstructed by reflectivity calculation method (RCM). The results show that after the implantation, a 1.5 μm-wide region with enhanced refractive-index was formed beneath the sample surfaces to act as waveguide structures for both Yb:GdCOB and Yb:YCOB.

  1. Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

    International Nuclear Information System (INIS)

    Hlatshwayo, T T; Kuhudzai, R J; Njoroge, E G; Malherbe, J B; O’Connell, J H; Skuratov, V A; Msimanga, M

    2015-01-01

    The effect of swift heavy ion (Xe 167 MeV) irradiation on polycrystalline SiC individually implanted with 360 keV Kr and Xe ions at room temperature to fluences of 2  ×  10 16 cm −2 and 1  ×  10 16 cm −2 respectively, was investigated using transmission electron microscopy (TEM), Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Implanted specimens were each irradiated with 167 MeV Xe +26 ions to a fluence of 8.3  ×  10 14 cm −2 at room temperature. It was observed that implantation of 360 keV Kr and Xe ions individually at room temperature amorphized the SiC from the surface up to a depth of 186 and 219 nm respectively. Swift heavy ion (SHI) irradiation reduced the amorphous layer by about 27 nm and 30 nm for the Kr and Xe samples respectively. Interestingly, the reduction in the amorphous layer was accompanied by the appearance of randomly oriented nanocrystals in the former amorphous layers after SHI irradiation in both samples. Previously, no similar nanocrystals were observed after SHI irradiations at electron stopping powers of 33 keV nm −1 and 20 keV nm −1 to fluences below 10 14 cm −2 . Therefore, our results suggest a fluence threshold for the formation of nanocrystals in the initial amorphous SiC after SHI irradiation. Raman results also indicated some annealing of radiation damage after swift heavy ion irradiation and the subsequent formation of small SiC crystals in the amorphous layers. No diffusion of implanted Kr and Xe was observed after swift heavy ion irradiation. (paper)

  2. Strain evolution in Si substrate due to implantation of MeV ion observed by extremely asymmetric x-ray diffraction

    International Nuclear Information System (INIS)

    Emoto, T.; Ghatak, J.; Satyam, P. V.; Akimoto, K.

    2009-01-01

    We studied the strain introduced in a Si(111) substrate due to MeV ion implantation using extremely asymmetric x-ray diffraction and measured the rocking curves of asymmetrical 113 diffraction for the Si substrates implanted with a 1.5 MeV Au 2+ ion at fluence values of 1x10 13 , 5x10 13 , and 1x10 14 /cm 2 . The measured curves consisted of a bulk peak and accompanying subpeak with an interference fringe. The positional relationship of the bulk peak to the subpeak and the intensity variation of those peaks with respect to the wavelengths of the x rays indicated that crystal lattices near the surface were strained; the lattice spacing of surface normal (111) planes near the surface was larger than that of the bulk. Detailed strain profiles along the depth direction were successfully estimated using a curve-fitting method based on Darwin's dynamical diffraction theory. Comparing the shapes of resultant strain profiles, we found that a strain evolution rapidly occurred within a depth of ∼300 nm at fluence values between 1x10 13 and 5x10 13 /cm 2 . This indicates that formation of the complex defects progressed near the surface when the fluence value went beyond a critical value between 1x10 13 and 5x10 13 /cm 2 and the defects brought a large strain to the substrate.

  3. Gold nanoparticle formation in diamond-like carbon using two different methods: Gold ion implantation and co-deposition of gold and carbon

    International Nuclear Information System (INIS)

    Salvadori, M. C.; Teixeira, F. S.; Araújo, W. W. R.; Sgubin, L. G.; Cattani, M.; Spirin, R. E.; Brown, I. G.

    2012-01-01

    We describe work in which gold nanoparticles were formed in diamond-like carbon (DLC), thereby generating a Au-DLC nanocomposite. A high-quality, hydrogen-free DLC thin film was formed by filtered vacuum arc plasma deposition, into which gold nanoparticles were introduced using two different methods. The first method was gold ion implantation into the DLC film at a number of decreasing ion energies, distributing the gold over a controllable depth range within the DLC. The second method was co-deposition of gold and carbon, using two separate vacuum arc plasma guns with suitably interleaved repetitive pulsing. Transmission electron microscope images show that the size of the gold nanoparticles obtained by ion implantation is 3-5 nm. For the Au-DLC composite obtained by co-deposition, there were two different nanoparticle sizes, most about 2 nm with some 6-7 nm. Raman spectroscopy indicates that the implanted sample contains a smaller fraction of sp 3 bonding for the DLC, demonstrating that some sp 3 bonds are destroyed by the gold implantation.

  4. Investigation of planar channeling radiation on diamond and quartz crystals at electron energies between 14 and 34 MeV and probing the influence of ultrasonic waves on channeling radiation

    International Nuclear Information System (INIS)

    Azadegan, B.

    2007-01-01

    Measurements of planar channeling radiation (CR) have been performed at the electron beam of ELBE within an energy range between 14 and 34 MeV and for thicknesses of the diamond crystals between 42.5 and 500 μm. Absolute CR photon yields have for the first time been obtained for the above given ranges of electron energy and crystal thickness. The square-root dependence of the planar CR photon yield on the thickness of diamond crystals has been confirmed. A systematic quantitative investigation of the influence of the crystal thickness on the CR line shape has for the first time been performed. The mean-squared multiple-scattering angle effective for planar CR observed in forward direction has been found to be weaker as assumed from scattering in amorphous targets. Scaling laws deduced from the measured CR data are of advantage for the operation of a CR source. The second part of this thesis deals with the possibility of stimulation of CR emission by means of ultrasonic vibrations excited in a piezoelectric single crystal. Since the knowledge of the CR spectra generated on undisturbed quartz crystals is a necessary precondition for some investigation of the influence of US, planar CR has for the first time been measured at medium electron energies for a variety of planes in quartz. As a consequence of the hexagonal structure of this crystal, relative intense CR could be registered even out of planes with indices larger than one. On the base of the non-linear optics method, occupation functions and spectral distributions of planar CR have been calculated for channeling of 20 MeV electrons in the (01 anti 15) plane of a 20 μm thick quartz crystal at resonant influence of ultrasound (US). The resonance frequencies have been deduced from the measurements of CR spectra performed on quartz. First experimental investigations of the influence of US on CR started at ELBE aimed at the study of the effect of non-resonant ultrasonic vibrations excited in a 500 μm thick

  5. Investigation of planar channeling radiation on diamond and quartz crystals at electron energies between 14 and 34 MeV and probing the influence of ultrasonic waves on channeling radiation

    Energy Technology Data Exchange (ETDEWEB)

    Azadegan, B.

    2007-11-15

    Measurements of planar channeling radiation (CR) have been performed at the electron beam of ELBE within an energy range between 14 and 34 MeV and for thicknesses of the diamond crystals between 42.5 and 500 {mu}m. Absolute CR photon yields have for the first time been obtained for the above given ranges of electron energy and crystal thickness. The square-root dependence of the planar CR photon yield on the thickness of diamond crystals has been confirmed. A systematic quantitative investigation of the influence of the crystal thickness on the CR line shape has for the first time been performed. The mean-squared multiple-scattering angle effective for planar CR observed in forward direction has been found to be weaker as assumed from scattering in amorphous targets. Scaling laws deduced from the measured CR data are of advantage for the operation of a CR source. The second part of this thesis deals with the possibility of stimulation of CR emission by means of ultrasonic vibrations excited in a piezoelectric single crystal. Since the knowledge of the CR spectra generated on undisturbed quartz crystals is a necessary precondition for some investigation of the influence of US, planar CR has for the first time been measured at medium electron energies for a variety of planes in quartz. As a consequence of the hexagonal structure of this crystal, relative intense CR could be registered even out of planes with indices larger than one. On the base of the non-linear optics method, occupation functions and spectral distributions of planar CR have been calculated for channeling of 20 MeV electrons in the (01 anti 15) plane of a 20 {mu}m thick quartz crystal at resonant influence of ultrasound (US). The resonance frequencies have been deduced from the measurements of CR spectra performed on quartz. First experimental investigations of the influence of US on CR started at ELBE aimed at the study of the effect of non-resonant ultrasonic vibrations excited in a 500 {mu}m thick

  6. Diamond-like carbon coatings on a CoCrMo implant alloy: A detailed XPS analysis of the chemical states at the interface

    International Nuclear Information System (INIS)

    Mueller, U.; Falub, C.V.; Thorwarth, G.; Voisard, C.; Hauert, R.

    2011-01-01

    Low friction and wear resistant coatings have a long history of successful applications in industry. It has long been hoped that these coatings, especially diamond-like carbon (DLC), could also be used successfully in load-bearing joint implants, extending implant life time considerably. However, despite several medical studies carried out so far, no regular DLC-coated implants are available on the market. In most cases, failure was due to insufficient long-term stability of the adhesion of such coatings on implants in vivo. That is because introducing a coated implant not only brings the coating into contact with the body environment but also the interface that controls the adhesion. This usually reactively formed interface must be considered to be at least one additional material which must be not only biocompatible, but also unsusceptible to corrosive attack. The aim of this paper is to analyze in detail the interface, i.e., the transition region between the substrate and the coating. This knowledge is necessary in order to find the right measures to ensure the long-term stability of the adhesion. Results for DLC coatings on a cobalt-chromium-molybdenum alloy are presented. It is shown that a very thin interface layer is formed, with the alloy on one side and the carbon film on the other side. This layer consists of a mixture of carbides from all the metals of the base material. This result is obtained by means of measuring depth profiles using X-ray photoelectron spectroscopy because these spectra yield not only the chemical composition of the interface but a detailed analysis provides information on the chemical states across the interface.

  7. Compositional, structural, and optical changes of polyimide implanted by 1.0 MeV Ni+ ions

    Czech Academy of Sciences Publication Activity Database

    Mikšová, Romana; Macková, Anna; Pupíková, Hana; Malinský, Petr; Slepička, P.; Švorčík, V.

    2017-01-01

    Roč. 406, SEP (2017), s. 199-204 ISSN 0168-583X R&D Projects: GA MŠk LM2015056; GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:61389005 Keywords : Ni ion implantation * polyimide * polymer degradation Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders OBOR OECD: Nuclear physics Impact factor: 1.109, year: 2016

  8. Fabrication of monolithic microfluidic channels in diamond with ion beam lithography

    Science.gov (United States)

    Picollo, F.; Battiato, A.; Boarino, L.; Ditalia Tchernij, S.; Enrico, E.; Forneris, J.; Gilardino, A.; Jakšić, M.; Sardi, F.; Skukan, N.; Tengattini, A.; Olivero, P.; Re, A.; Vittone, E.

    2017-08-01

    In the present work, we report on the monolithic fabrication by means of ion beam lithography of hollow micro-channels within a diamond substrate, to be employed for microfluidic applications. The fabrication strategy takes advantage of ion beam induced damage to convert diamond into graphite, which is characterized by a higher reactivity to oxidative etching with respect to the chemically inert pristine structure. This phase transition occurs in sub-superficial layers thanks to the peculiar damage profile of MeV ions, which mostly damage the target material at their end of range. The structures were obtained by irradiating commercial CVD diamond samples with a micrometric collimated C+ ion beam at three different energies (4 MeV, 3.5 MeV and 3 MeV) at a total fluence of 2 × 1016 cm-2. The chosen multiple-energy implantation strategy allows to obtain a thick box-like highly damaged region ranging from 1.6 μm to 2.1 μm below the sample surface. High-temperature annealing was performed to both promote the graphitization of the ion-induced amorphous layer and to recover the pristine crystalline structure in the cap layer. Finally, the graphite was removed by ozone etching, obtaining monolithic microfluidic structures. These prototypal microfluidic devices were tested injecting aqueous solutions and the evidence of the passage of fluids through the channels was confirmed by confocal fluorescent microscopy.

  9. Leaky mode suppression in planar optical waveguides written in Er:TeO{sub 2}–WO{sub 3} glass and CaF{sub 2} crystal via double energy implantation with MeV N{sup +} ions

    Energy Technology Data Exchange (ETDEWEB)

    Bányász, I., E-mail: banyasz@sunserv.kfki.hu [Department of Crystal Physics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O.B. 49, H-1525 Budapest (Hungary); Zolnai, Z.; Fried, M. [Research Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungarian Academy of Sciences, P.O.B. 49, Budapest H-1525 (Hungary); Berneschi, S. [MDF-Lab, “Nello Carrara” Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); “Enrico Fermi” Center for Study and Research, Piazza del Viminale 2, 00184 Roma (Italy); Pelli, S.; Nunzi-Conti, G. [MDF-Lab, “Nello Carrara” Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy)

    2014-05-01

    Ion implantation proved to be an universal technique for producing waveguides in most optical materials. Tellurite glasses are good hosts of rare-earth elements for the development of fibre and integrated optical amplifiers and lasers covering all the main telecommunication bands. Er{sup 3+}-doped tellurite glasses are good candidates for the fabrication of broadband amplifiers in wavelength division multiplexing around 1.55 μm, as they exhibit large stimulated cross sections and broad emission bandwidth. Calcium fluoride is an excellent optical material, due to its perfect optical characteristics from UV wavelengths up to near IR. It has become a promising laser host material (doped with rare earth elements). Ion implantation was also applied to optical waveguide fabrication in CaF{sub 2} and other halide crystals. In the present work first single-energy implantations at 3.5 MeV at various fluences were applied. Waveguide operation up to 1.5 μm was observed in Er:Te glass, and up to 980 nm in CaF{sub 2}. Then double-energy implantations at a fixed upper energy of 3.5 MeV and lower energies between 2.5 and 3.2 MeV were performed to suppress leaky modes by increasing barrier width.

  10. Fast diamond photoconductors

    International Nuclear Information System (INIS)

    Pochet, T.

    1993-01-01

    Preliminary results on the response of type Ib and IIa diamond photodetectors to fast laser pulse exposures at 265 and 530 nm are presented. The influence of the applied bias, the laser wavelengths and the light intensity on the detector sensitivity is studied. Also, recent measurements with 1.25 MeV gamma ray pulses are reported. (authors). 13 refs., 7 figs., 1 tab

  11. Diamond identifaction

    International Nuclear Information System (INIS)

    1976-01-01

    X-ray topography on diamonds allows for unique identification of diamonds. The method described consists of the registration of crystal defects, inclusions etc. of a diamond, resulting in a 'finger print' of the individual jewel which can only be changed by its complete destruction

  12. Preparation of Ag-containing diamond-like carbon films on the interior surface of tubes by a combined method of plasma source ion implantation and DC sputtering

    Science.gov (United States)

    Hatada, R.; Flege, S.; Bobrich, A.; Ensinger, W.; Dietz, C.; Baba, K.; Sawase, T.; Watamoto, T.; Matsutani, T.

    2014-08-01

    Adhesive diamond-like carbon (DLC) films can be prepared by plasma source ion implantation (PSII), which is also suitable for the treatment of the inner surface of a tube. Incorporation of a metal into the DLC film provides a possibility to change the characteristics of the DLC film. One source for the metal is DC sputtering. In this study PSII and DC sputtering were combined to prepare DLC films containing low concentrations of Ag on the interior surfaces of stainless steel tubes. A DLC film was deposited using a C2H4 plasma with the help of an auxiliary electrode inside of the tube. This electrode was then used as a target for the DC sputtering. A mixture of the gases Ar and C2H4 was used to sputter the silver. By changing the gas flow ratios and process time, the resulting Ag content of the films could be varied. Sample characterizations were performed by X-ray photoelectron spectroscopy, secondary ion mass spectrometry, atomic force microscopy and Raman spectroscopy. Additionally, a ball-on-disk test was performed to investigate the tribological properties of the films. The antibacterial activity was determined using Staphylococcus aureus bacteria.

  13. RBS studies of the lattice damage caused by 1 MeV Si+ implantation into Al0.3Ga0.7As/GaAs superlattices at elevated temperature

    International Nuclear Information System (INIS)

    Xu Tianbing; Zhu Peiran; Zhou Junsi; Li Daiqing; Gong Baoan; Wan Ya; Mu Shanming; Zhao Qingtai; Wang Zhonglie

    1994-01-01

    The lattice damage accumulation in GaAs and Al 0.3 Ga 0.7 As/GaAs superlattices by 1 MeV Si + irradiation at room temperature and 350 C has been studied. For irradiations at 350 C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 x 10 15 Si/cm 2 for GaAs, and is 5 x 10 15 Si/cm 2 for Al 0.8 Ga 0.7 As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350 C. The damage accumulation rate for 1 MeV Si ion implantation in Al 0.3 Ga 0.7 As/GaAs superlattice is less than that in GaAs. (orig.)

  14. Improvements in or relating to artefacts incorporating industrial diamonds

    International Nuclear Information System (INIS)

    Hartley, N.E.W.; Poole, M.J.

    1981-01-01

    A process for improving the wear characteristics of industrial diamonds is described which consists of implanting into the surface regions of the diamonds, ions of a material having an atomic weight greater than one and such as to affect the surface properties of the diamonds. Examples of the invention, in which N + and C + ions have been used, are cited. (U.K.)

  15. Effects of electrical conductivity of substrate materials on microstructure of diamond-like carbon films prepared by bipolar-type plasma based ion implantation

    International Nuclear Information System (INIS)

    Nakao, S; Sonoda, T

    2013-01-01

    Diamond-like carbon (DLC) films are prepared by a bipolar-type plasma based ion implantation, and the structural differences between DLC films deposited on different electrical conductive substrates, i.e., conductive Si wafers and insulating glass plates are examined by Raman spectroscopy and x-ray photo emission spectroscopy (XPS). In the Raman measurements, graphite (G) and disorder (D) peaks are observed for both samples. However, the additional photo luminescence is overlapped on the spectra in the case of on-glass sample. To elucidate the structural difference, the intensity ratio of D to G peak (I(D)/I(G)), G peak position and full width at half maximum (FWHM) are obtained by curve fitting using Gaussian function and linear baseline. It is found that the I(D)/I(G) is lower, G peak position is higher and FWHM of G peak is narrower for on-glass sample than for on-Si sample. According to Robertson [1], lower I(D)/I(G) seems more sp 3 C-C bonding in amount for on-glass sample. In contrast, higher G peak position and narrower FWHM of G peak suggest less sp 3 C-C bonding in amount for on-glass sample. The results of XPS analysis with C1s spectra reveal that sp 3 ratio, i.e., the intensity ratio of sp 3 /(sp 3 +sp 2 ) is smaller for on-glass sample than for on-Si sample. The inconsistency of the trend between I(D)/I(G) and other parameters (G peak position and FWHM of G peak) might be caused by the overlap of photo luminescence signal on Raman spectrum as to on-glass sample. From these results, it is considered that sp 3 C-C bonding is reduced in amount when using insulating substrate in comparison with conductive substrate.

  16. Raman microprobe measurements of stress in ion implanted materials

    Energy Technology Data Exchange (ETDEWEB)

    Nugent, K W; Prawer, S; Weiser, P S; Dooley, S P [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1994-12-31

    Raman microprobe measurements of ion implanted diamond and silicon have shown significant shifts in the Raman line due to stresses in the materials. The Raman line shifts to higher energy if the stress is compressive and to lower energy for tensile stress{sup 1}. The silicon sample was implanted in a 60 {mu}m square with 2.56 x 10{sup 17} ions per square centimeter of 2 MeV Helium. This led to the formation of raised squares with the top 370mm above the original surface. In Raman studies of silicon using visible light, the depth of penetration of the laser beam into the sample is much less than one micron. It was found that the Raman line is due to the silicon overlying the damage region. The diamond sample was implanted with 2 x 10{sup 15} ions per square centimeter of 2.8 MeV carbon. It was concluded that the Raman spectrum could provide information concerning both the magnitude and the direction of stress in an ion implanted sample. It was possible in some cases to determine whether the stress direction is parallel or perpendicular to the sample surface. 1 refs., 2 figs.

  17. Raman microprobe measurements of stress in ion implanted materials

    Energy Technology Data Exchange (ETDEWEB)

    Nugent, K.W.; Prawer, S.; Weiser, P.S.; Dooley, S.P. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1993-12-31

    Raman microprobe measurements of ion implanted diamond and silicon have shown significant shifts in the Raman line due to stresses in the materials. The Raman line shifts to higher energy if the stress is compressive and to lower energy for tensile stress{sup 1}. The silicon sample was implanted in a 60 {mu}m square with 2.56 x 10{sup 17} ions per square centimeter of 2 MeV Helium. This led to the formation of raised squares with the top 370mm above the original surface. In Raman studies of silicon using visible light, the depth of penetration of the laser beam into the sample is much less than one micron. It was found that the Raman line is due to the silicon overlying the damage region. The diamond sample was implanted with 2 x 10{sup 15} ions per square centimeter of 2.8 MeV carbon. It was concluded that the Raman spectrum could provide information concerning both the magnitude and the direction of stress in an ion implanted sample. It was possible in some cases to determine whether the stress direction is parallel or perpendicular to the sample surface. 1 refs., 2 figs.

  18. Ion channelling in diamond

    International Nuclear Information System (INIS)

    Derry, T.E.

    1978-06-01

    Diamond is one of the most extreme cases from a channelling point of view, having the smallest thermal vibration amplitude and the lowest atomic number of commonly-encountered crystals. These are the two parameters most important for determining channelling behaviour. It is of consiberable interest therefore to see how well the theories explaining and predicting the channeling properties of other substance, succeed with diamond. Natural diamond, although the best available form for these experiments, is rather variable in its physical properties. Part of the project was devoted to considering and solving the problem of obtaining reproducible results representative of the ideal crystal. Channelling studies were performed on several good crystals, using the Rutherford backscattering method. Critical angles for proton channelling were measured for incident energies from 0.6 to 4.5 MeV, in the three most open axes and three most open planes of the diamond structure, and for α-particle channelling at 0.7 and 1.0 MeV (He + ) in the same axes and planes. For 1.0 MeV protons, the crystal temperature was varied from 20 degrees Celsius to 700 degrees Celsius. The results are presented as curves of backscattered yield versus angle in the region of each axis or plane, and summarised in the form of tables and graphs. Generally the critical angles, axial minimum yields, and temperature dependence are well predicted by the accepted theories. The most valuable overall conclusion is that the mean thermal vibration amplitude of the atoms in a crytical determines the critical approach distance to the channel walls at which an ion can remain channelled, even when this distance is much smaller than the Thomas-Fermi screening distance of the atomic potential, as is the case in diamond. A brief study was made of the radiation damage caused by α-particle bombardment, via its effect on the channelling phenomenon. It was possible to hold damage down to negligible levels during the

  19. Diamond identification

    International Nuclear Information System (INIS)

    Lang, A.R.

    1979-01-01

    Methods of producing sets of records of the internal defects of diamonds as a means of identification of the gems by x-ray topography are described. To obtain the records one can either use (a) monochromatic x-radiation reflected at the Bragg angle from crystallographically equivalent planes of the diamond lattice structure, Bragg reflections from each such plane being recorded from a number of directions of view, or (b) white x-radiation incident upon the diamond in directions having a constant angular relationship to each equivalent axis of symmetry of the diamond lattice structure, Bragg reflections being recorded for each direction of the incident x-radiation. By either method an overall point-to-point three dimensional representation of the diamond is produced. (U.K.)

  20. Development and Characterization of a Diamond-Insulated Graphitic Multi Electrode Array Realized with Ion Beam Lithography

    Directory of Open Access Journals (Sweden)

    Federico Picollo

    2014-12-01

    Full Text Available The detection of quantal exocytic events from neurons and neuroendocrine cells is a challenging task in neuroscience. One of the most promising platforms for the development of a new generation of biosensors is diamond, due to its biocompatibility, transparency and chemical inertness. Moreover, the electrical properties of diamond can be turned from a perfect insulator into a conductive material (resistivity ~mΩ·cm by exploiting the metastable nature of this allotropic form of carbon. A 16‑channels MEA (Multi Electrode Array suitable for cell culture growing has been fabricated by means of ion implantation. A focused 1.2 MeV He+ beam was scanned on a IIa single-crystal diamond sample (4.5 × 4.5 × 0.5 mm3 to cause highly damaged sub-superficial structures that were defined with micrometric spatial resolution. After implantation, the sample was annealed. This process provides the conversion of the sub-superficial highly damaged regions to a graphitic phase embedded in a highly insulating diamond matrix. Thanks to a three-dimensional masking technique, the endpoints of the sub-superficial channels emerge in contact with the sample surface, therefore being available as sensing electrodes. Cyclic voltammetry and amperometry measurements of solutions with increasing concentrations of adrenaline were performed to characterize the biosensor sensitivity. The reported results demonstrate that this new type of biosensor is suitable for in vitro detection of catecholamine release.

  1. Microstructure evolution in carbon-ion implanted sapphire

    International Nuclear Information System (INIS)

    Orwa, J. O.; McCallum, J. C.; Jamieson, D. N.; Prawer, S.; Peng, J. L.; Rubanov, S.

    2010-01-01

    Carbon ions of MeV energy were implanted into sapphire to fluences of 1x10 17 or 2x10 17 cm -2 and thermally annealed in forming gas (4% H in Ar) for 1 h. Secondary ion mass spectroscopy results obtained from the lower dose implant showed retention of implanted carbon and accumulation of H near the end of range in the C implanted and annealed sample. Three distinct regions were identified by transmission electron microscopy of the implanted region in the higher dose implant. First, in the near surface region, was a low damage region (L 1 ) composed of crystalline sapphire and a high density of plateletlike defects. Underneath this was a thin, highly damaged and amorphized region (L 2 ) near the end of range in which a mixture of i-carbon and nanodiamond phases are present. Finally, there was a pristine, undamaged sapphire region (L 3 ) beyond the end of range. In the annealed sample some evidence of the presence of diamond nanoclusters was found deep within the implanted layer near the projected range of the C ions. These results are compared with our previous work on carbon implanted quartz in which nanodiamond phases were formed only a few tens of nanometers from the surface, a considerable distance from the projected range of the ions, suggesting that significant out diffusion of the implanted carbon had occurred.

  2. Dosimetry in radiotherapy with natural diamond detectors

    International Nuclear Information System (INIS)

    De Angelis, C.; Onori, S.; Pacilio, M.; Cirrone, G.A.P.; Cuttone, G.; Raffaele, L.; Bucciolini, M.; Mazzocchi, S.

    2002-01-01

    There is wide interest in the use of diamond detectors for dosimetry in radiotherapy mainly because of the small dimensions, radiation hardness, nearly tissue equivalence of sensitive material and capability to deliver the dosimetric response 'on line'. In order to assess the dosimetric properties of PTW Riga diamond detectors type 60003, experiments were performed in conventional (high energy photon and electron) therapy beams as well as in proton therapy beams. The main detector features investigated were reproducibility of response, dose-signal relationship, temperature dependence, dose-rate dependence, energy dependence and angular dependence. High energy photons (6-25 MV) and electrons (6-22 MeV), available at the Radiotherapy Department of the Florence University, were used for investigating the general properties. Two different PTW diamond detectors of the same type were used to evidence inter-sample differences. The beam quality dependence of the detector response is probably the most critical point and this statement is of particular relevance for proton dosimetry since the proton LET changes with depth in the medium. Mainly because of the little information available on detector sensitivity variations with beam energy, the use of diamonds for clinical proton dosimetry is not widespread. In two recent papers a sensitivity dependence on proton energy of a natural PTW diamond detector has been reported. Due to the necessity to characterise each diamond detector individually the PTW Riga natural diamond detector in operation at the LNS-INFN, Catania, Italy was tested with the local proton beam line. This experiment is of main concern because this proton beam, produced by a superconducting cyclotron and used for ocular melanoma treatment, is available only since 2001 (CATANA beam). The first patient has been treated in February 2002. Proton irradiations were performed with non modulated and modulated 62 MeV beams. Attention was focused on diamond sensitivity

  3. Silicon exfoliation by hydrogen implantation: Actual nature of precursor defects

    Energy Technology Data Exchange (ETDEWEB)

    Kuisseu, Pauline Sylvia Pokam, E-mail: pauline-sylvia.pokam-kuisseu@cnrs-orleans.fr [CEMHTI-CNRS, 3A, rue de la férollerie, 45071 Orléans (France); Pingault, Timothée; Ntsoenzok, Esidor [CEMHTI-CNRS, 3A, rue de la férollerie, 45071 Orléans (France); Regula, Gabrielle [IM2NP-CNRS-Université d’Aix-Marseille, Avenue Escadrille Normandie Niemen, 13397 Marseille (France); Mazen, Frédéric [CEA-Leti, MINATEC campus, 17, rue des Martyrs, 38054 Grenoble Cedex 9 (France); Sauldubois, Audrey [Université d’Orléans, rue de Chartres – Collegium ST, 45067 Orléans (France); Andreazza, Caroline [ICMN-CNRS-Université d’Orléans, 1b rue de la férollerie, 45071 Orléans (France)

    2017-06-15

    MeV energy hydrogen implantation in silicon followed by a thermal annealing is a very smart way to produce high crystalline quality silicon substrates, much thinner than what can be obtained by diamond disk or wire sawing. Using this kerf-less approach, ultra-thin substrates with thicknesses between 15 µm and 100 µm, compatible with microelectronic and photovoltaic applications are reported. But, despite the benefits of this approach, there is still a lack of fundamental studies at this implantation energy range. However, if very few papers have addressed the MeV energy range, a lot of works have been carried out in the keV implantation energy range, which is the one used in the smart-cut® technology. In order to check if the nature and the growth mechanism of extended defects reported in the widely studied keV implantation energy range could be extrapolated in the MeV range, the thermal evolution of extended defects formed after MeV hydrogen implantation in (100) Si was investigated in this study. Samples were implanted at 1 MeV with different fluences ranging from 6 × 10{sup 16} H/cm{sup 2} to 2 × 10{sup 17} H/cm{sup 2} and annealed at temperatures up to 873 K. By cross-section transmission electron microscopy, we found that the nature of extended defects in the MeV range is quite different of what is observed in the keV range. In fact, in our implantation conditions, the generated extended defects are some kinds of planar clusters of gas-filled lenses, instead of platelets as commonly reported in the keV energy range. This result underlines that hydrogen behaves differently when it is introduced in silicon at high or low implantation energy. The activation energy of the growth of these extended defects is independent of the chosen fluence and is between (0.5–0.6) eV, which is very close to the activation energy reported for atomic hydrogen diffusion in a perfect silicon crystal.

  4. Ohmic contacts to semiconducting diamond

    Science.gov (United States)

    Zeidler, James R.; Taylor, M. J.; Zeisse, Carl R.; Hewett, C. A.; Delahoussaye, Paul R.

    1990-10-01

    Work was carried out to improve the electron beam evaporation system in order to achieve better deposited films. The basic system is an ion pumped vacuum chamber, with a three-hearth, single-gun e-beam evaporator. Four improvements were made to the system. The system was thoroughly cleaned and new ion pump elements, an e-gun beam adjust unit, and a more accurate crystal monitor were installed. The system now has a base pressure of 3 X 10(exp -9) Torr, and can easily deposit high-melting-temperature metals such as Ta with an accurately controlled thickness. Improved shadow masks were also fabricated for better alignment and control of corner contacts for electrical transport measurements. Appendices include: A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond; Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process; Metallization of Semiconducting Diamond: Mo, Mo/Au, and Mo/Ni/Au; Specific Contact Resistance Measurements of Ohmic Contracts to Diamond; and Electrical Activation of Boron Implanted into Diamond.

  5. EBS/C proton spectra from a virgin diamond crystal

    Energy Technology Data Exchange (ETDEWEB)

    Erich, M., E-mail: marko.erich@gmail.com [Laboratory of Physics, Vinča Institute of Nuclear Sciences, University of Belgrade, PO Box 552, Belgrade (Serbia); Kokkoris, M. [Department of Physics, National Technical University of Athens, Zografou Campus 157 80, Athens (Greece); Fazinić, S. [Laboratory for Ion Beam Interactions, Department of Experimental Physics, Institute Ruđer Bošković, Bijenička cesta 54, 10000 Zagreb (Croatia); Petrović, S. [Laboratory of Physics, Vinča Institute of Nuclear Sciences, University of Belgrade, PO Box 552, Belgrade (Serbia)

    2016-08-15

    In the present work, elastic backscattering channeling spectra, EBS/C, of protons in a 〈1 0 0〉 diamond crystal were experimentally and theoretically studied via a new computer simulation code. Proton incident energies for EBS/C spectra were in the energy range from 1.0 MeV to 1.9 MeV. The energy range was chosen in order to explore a distinct strong resonance of the {sup 12}C(p,p{sub 0}){sup 12}C elastic scattering at 1737 keV. The computer simulation code applied for the fitting of the experimental spectra in the random mode was compared with the corresponding SIMNRA results. In the channeling mode, it assumes a Gompertz type sigmoidal dechanneling function, which has two fitting parameters, x{sub c} and k, the dechanneling range and rate, respectively. It also uses α, ratio of the channeling to random energy losses, as a fitting parameter. It was observed that x{sub c} increases, k decreases and α stays relatively constant with the proton incident energy. These observations confirm the physical interpretation of the fitting parameters. Also, they constitute the basics for the further development of the code for the quantification of induced amorphization and depth profiling of implanted ions.

  6. Kelvin probe characterization of buried graphitic microchannels in single-crystal diamond

    International Nuclear Information System (INIS)

    Bernardi, E.; Battiato, A.; Olivero, P.; Vittone, E.; Picollo, F.

    2015-01-01

    In this work, we present an investigation by Kelvin Probe Microscopy (KPM) of buried graphitic microchannels fabricated in single-crystal diamond by direct MeV ion microbeam writing. Metal deposition of variable-thickness masks was adopted to implant channels with emerging endpoints and high temperature annealing was performed in order to induce the graphitization of the highly-damaged buried region. When an electrical current was flowing through the biased buried channel, the structure was clearly evidenced by KPM maps of the electrical potential of the surface region overlying the channel at increasing distances from the grounded electrode. The KPM profiling shows regions of opposite contrast located at different distances from the endpoints of the channel. This effect is attributed to the different electrical conduction properties of the surface and of the buried graphitic layer. The model adopted to interpret these KPM maps and profiles proved to be suitable for the electronic characterization of buried conductive channels, providing a non-invasive method to measure the local resistivity with a micrometer resolution. The results demonstrate the potential of the technique as a powerful diagnostic tool to monitor the functionality of all-carbon graphite/diamond devices to be fabricated by MeV ion beam lithography

  7. Diamond Fuzzy Number

    Directory of Open Access Journals (Sweden)

    T. Pathinathan

    2015-01-01

    Full Text Available In this paper we define diamond fuzzy number with the help of triangular fuzzy number. We include basic arithmetic operations like addition, subtraction of diamond fuzzy numbers with examples. We define diamond fuzzy matrix with some matrix properties. We have defined Nested diamond fuzzy number and Linked diamond fuzzy number. We have further classified Right Linked Diamond Fuzzy number and Left Linked Diamond Fuzzy number. Finally we have verified the arithmetic operations for the above mentioned types of Diamond Fuzzy Numbers.

  8. Ballistic self-annealing during ion implantation

    International Nuclear Information System (INIS)

    Prins, Johan F.

    2001-01-01

    Ion implantation conditions are considered during which the energy, dissipated in the collision cascades, is low enough to ensure that the defects, which are generated during these collisions, consist primarily of vacancies and interstitial atoms. It is proposed that ballistic self-annealing is possible when the point defect density becomes high enough, provided that none, or very few, of the interstitial atoms escape from the layer being implanted. Under these conditions, the fraction of ballistic atoms, generated within the collision cascades from substitutional sites, decreases with increasing ion dose. Furthermore, the fraction of ballistic atoms, which finally end up within vacancies, increases with increasing vacancy density. Provided the crystal structure does not collapse, a damage threshold should be approached where just as many atoms are knocked out of substitutional sites as the number of ballistic atoms that fall back into vacancies. Under these conditions, the average point defect density should approach saturation. This model is applied to recently published Raman data that have been measured on a 3 MeV He + -ion implanted diamond (Orwa et al 2000 Phys. Rev. B 62 5461). The conclusion is reached that this ballistic self-annealing model describes the latter data better than a model in which it is assumed that the saturation in radiation damage is caused by amorphization of the implanted layer. (author)

  9. Creation and characterization of He-related color centers in diamond

    Energy Technology Data Exchange (ETDEWEB)

    Forneris, J., E-mail: forneris@to.infn.it [Istituto Nazionale di Fisica Nucleare (INFN), Sez. Torino, via P. Giuria 1, 10125 Torino (Italy); Physics Department and “NIS” Inter-departmental Centre - University of Torino, 10125 Torino (Italy); Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia (CNISM), Sez. Torino, Torino (Italy); Tengattini, A.; Tchernij, S. Ditalia [Physics Department and “NIS” Inter-departmental Centre - University of Torino, 10125 Torino (Italy); Istituto Nazionale di Fisica Nucleare (INFN), Sez. Torino, via P. Giuria 1, 10125 Torino (Italy); Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia (CNISM), Sez. Torino, Torino (Italy); Picollo, F. [Istituto Nazionale di Fisica Nucleare (INFN), Sez. Torino, via P. Giuria 1, 10125 Torino (Italy); Physics Department and “NIS” Inter-departmental Centre - University of Torino, 10125 Torino (Italy); Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia (CNISM), Sez. Torino, Torino (Italy); Battiato, A. [Physics Department and “NIS” Inter-departmental Centre - University of Torino, 10125 Torino (Italy); Istituto Nazionale di Fisica Nucleare (INFN), Sez. Torino, via P. Giuria 1, 10125 Torino (Italy); Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia (CNISM), Sez. Torino, Torino (Italy); Traina, P.; Degiovanni, I.P.; Moreva, E.; Brida, G. [Istituto Nazionale di Ricerca Metrologica (INRiM), Strada delle Cacce 91, 10135 Torino (Italy); Grilj, V.; Skukan, N.; Jakšić, M. [Ruđer Bošković Institute, Bijenicka 54, P.O. Box 180, 10002 Zagreb (Croatia); and others

    2016-11-15

    Diamond is a promising material for the development of emerging applications in quantum optics, quantum information and quantum sensing. The fabrication and characterization of novel luminescent defects with suitable opto-physical properties is therefore of primary importance for further advances in these research fields. In this work we report on the investigation in the formation of photoluminescent (PL) defects upon MeV He implantation in diamond. Such color centers, previously reported only in electroluminescence and cathodoluminescence regime, exhibited two sharp emission lines at 536.5 nm and 560.5 nm, without significant phonon sidebands. A strong correlation between the PL intensities of the above-mentioned emission lines and the He implantation fluence was found in the 10{sup 15}–10{sup 17} cm{sup −2} fluence range. The PL emission features were not detected in control samples, i.e. samples that were either unirradiated or irradiated with different ion species (H, C). Therefore, the PL features are attributed to optically active defects in the diamond matrix associated with He impurities. The intensity of the 536.5 nm and 560.5 nm emission lines was investigated as a function of the annealing temperature of the diamond substrate. The emission was observed upon annealing at temperatures higher than 500 °C, at the expenses of the concurrently decreasing neutral-vacancy-related GR1 emission intensity. Therefore, our findings indicate that the luminescence originates from the formation of a stable lattice defect. Finally, photoluminescence from He-related defects was observed under different laser excitations wavelengths (i.e. 532 nm and 405 nm), thus providing promising evidence of a broad spectral range for optical stimulation. - Highlights: • Creation of luminescent defects in single-crystal diamond upon He implantation. • First observation of photoluminescent emission from two sharp emission lines at 536.5 and 560.5 nm. • Attribution of the

  10. Creation and characterization of He-related color centers in diamond

    International Nuclear Information System (INIS)

    Forneris, J.; Tengattini, A.; Tchernij, S. Ditalia; Picollo, F.; Battiato, A.; Traina, P.; Degiovanni, I.P.; Moreva, E.; Brida, G.; Grilj, V.; Skukan, N.; Jakšić, M.

    2016-01-01

    Diamond is a promising material for the development of emerging applications in quantum optics, quantum information and quantum sensing. The fabrication and characterization of novel luminescent defects with suitable opto-physical properties is therefore of primary importance for further advances in these research fields. In this work we report on the investigation in the formation of photoluminescent (PL) defects upon MeV He implantation in diamond. Such color centers, previously reported only in electroluminescence and cathodoluminescence regime, exhibited two sharp emission lines at 536.5 nm and 560.5 nm, without significant phonon sidebands. A strong correlation between the PL intensities of the above-mentioned emission lines and the He implantation fluence was found in the 10 15 –10 17 cm −2 fluence range. The PL emission features were not detected in control samples, i.e. samples that were either unirradiated or irradiated with different ion species (H, C). Therefore, the PL features are attributed to optically active defects in the diamond matrix associated with He impurities. The intensity of the 536.5 nm and 560.5 nm emission lines was investigated as a function of the annealing temperature of the diamond substrate. The emission was observed upon annealing at temperatures higher than 500 °C, at the expenses of the concurrently decreasing neutral-vacancy-related GR1 emission intensity. Therefore, our findings indicate that the luminescence originates from the formation of a stable lattice defect. Finally, photoluminescence from He-related defects was observed under different laser excitations wavelengths (i.e. 532 nm and 405 nm), thus providing promising evidence of a broad spectral range for optical stimulation. - Highlights: • Creation of luminescent defects in single-crystal diamond upon He implantation. • First observation of photoluminescent emission from two sharp emission lines at 536.5 and 560.5 nm. • Attribution of the emission lines to

  11. Diamond thin films: giving biomedical applications a new shine.

    Science.gov (United States)

    Nistor, P A; May, P W

    2017-09-01

    Progress made in the last two decades in chemical vapour deposition technology has enabled the production of inexpensive, high-quality coatings made from diamond to become a scientific and commercial reality. Two properties of diamond make it a highly desirable candidate material for biomedical applications: first, it is bioinert, meaning that there is minimal immune response when diamond is implanted into the body, and second, its electrical conductivity can be altered in a controlled manner, from insulating to near-metallic. In vitro, diamond can be used as a substrate upon which a range of biological cells can be cultured. In vivo , diamond thin films have been proposed as coatings for implants and prostheses. Here, we review a large body of data regarding the use of diamond substrates for in vitro cell culture. We also detail more recent work exploring diamond-coated implants with the main targets being bone and neural tissue. We conclude that diamond emerges as one of the major new biomaterials of the twenty-first century that could shape the way medical treatment will be performed, especially when invasive procedures are required. © 2017 The Authors.

  12. Diamond as a scaffold for bone growth.

    Science.gov (United States)

    Fox, Kate; Palamara, Joseph; Judge, Roy; Greentree, Andrew D

    2013-04-01

    Diamond is an attractive material for biomedical implants. In this work, we investigate its capacity as a bone scaffold. It is well established that the bioactivity of a material can be evaluated by examining its capacity to form apatite-like calcium phosphate phases on its surface when exposed to simulated body fluid. Accordingly, polycrystalline diamond (PCD) and ultrananocrystalline diamond (UNCD) deposited by microwave plasma chemical vapour deposition were exposed to simulated body fluid and assessed for apatite growth when compared to the bulk silicon. Scanning electron microscopy and X-ray photoelectron spectroscopy showed that both UNCD and PCD are capable of acting as a bone scaffold. The composition of deposited apatite suggests that UNCD and PCD are suitable for in vivo implantation with UNCD possible favoured in applications where rapid osseointegration is essential.

  13. Microbeam line of MeV heavy ions for materials modification and in-situ analysis

    International Nuclear Information System (INIS)

    Horino, Yuji; Chayahara, Akiyoshi; Kiuchi, Masato; Fujii, Kanenaga; Satoh, Mamoru; Takai, Mikio.

    1990-01-01

    A microbeam line for MeV heavy ions of almost any element has been developed for microion-beam processing such as maskless MeV ion implantation and its in-situ analysis. Beam spot sizes of 4.0 μm x 4.0 μm for 3 MeV C 2+ and 9.6 μm x 4.8 μm for 1.8 MeV Au 2+ beams were obtained. Maskless MeV gold ion implantation to a silicon substrate and in-situ microanalysis before and after ion implantation were demonstrated. (author)

  14. Neutron spectrometry by diamond detector for nuclear radiation

    International Nuclear Information System (INIS)

    Kozlov, S.F.; Konorova, E.A.; Barinov, A.L.; Jarkov, V.P.

    1975-01-01

    Experiments on fast neutron spectrometry using the nuclear radiation diamond detector inside a horizontal channel of a water-cooled and water-moderated reactor are described. It is shown that the diamond detector enables neutron spectra to be measured within the energy range of 0.3 to 10 MeV against reactor gamma-radiation background and has radiation resistance higher than that of conventional semiconductor detectors. (U.S.)

  15. Charge collection characteristics of a super-thin diamond membrane detector measured with high-energy heavy ions

    International Nuclear Information System (INIS)

    Iwamoto, N.; Makino, T.; Onoda, S.; Ohshima, T.; Kamiya, T.; Kada, W.; Skukan, N.; Grilj, V.; Jaksic, M.; Pomorski, M.

    2014-01-01

    A transmission particle detector based on a super-thin diamond membrane film which can also be used simultaneously as a vacuum window for ion beam extraction has been developed. Charge collection characteristics of a μ-thick diamond membrane detector for high-energy heavy ions including 75 MeV Ne, 150 MeV Ar, 322 MeV Kr, and 454 MeV Xe have been investigated for the first time. Charge collection signals under single particle flux from the thin part are stable and are well distinguishable from background signals. This behavior suggests that the diamond membrane detector could be used for counting single ions. On the other hand, charge collection efficiency is found to decrease with increasing of charge generated in the diamond membrane detector. This suggests that the pulse height defect, which has been previously reported for Si and SiC detectors, also occurs in the diamond membrane detector. (authors)

  16. Synthetic diamond in electrochemistry

    International Nuclear Information System (INIS)

    Pleskov, Yurii V

    1999-01-01

    The results of studies on the electrochemistry of diamond carried out during the last decade are reviewed. Methods for the preparation, the crystalline structure and the main electrophysical properties of diamond thin films are considered. Depending on the doping conditions, the diamond behaves as a superwide-gap semiconductor or as a semimetal. It is shown that the 'metal-like' diamond is corrosion-resistant and can be used advantageously as an electrode in the electrosynthesis (in particular, for the electroreduction of compounds that are difficult to reduce) and electroanalysis. Kinetic characteristics of some redox reactions and the impedance parameters for diamond electrodes are presented. The results of comparative studies of the electrodes made of diamond single crystals, polycrystalline diamond and amorphous diamond-like carbon, which reveal the effect of the crystalline structure (e.g., the influence of intercrystallite boundaries) on the electrochemical properties of diamond, are presented. The bibliography includes 99 references.

  17. Nanostructured diamond coatings for orthopaedic applications

    Science.gov (United States)

    CATLEDGE, S.A.; THOMAS, V.; VOHRA, Y.K.

    2013-01-01

    With increasing numbers of orthopaedic devices being implanted, greater emphasis is being placed on ceramic coating technology to reduce friction and wear in mating total joint replacement components, in order to improve implant function and increase device lifespan. In this chapter, we consider ultra-hard carbon coatings, with emphasis on nanostructured diamond, as alternative bearing surfaces for metallic components. Such coatings have great potential for use in biomedical implants as a result of their extreme hardness, wear resistance, low friction and biocompatibility. These ultra-hard carbon coatings can be deposited by several techniques resulting in a wide variety of structures and properties. PMID:25285213

  18. The Geopolitical Setting of Conflict Diamonds.

    Science.gov (United States)

    Haggerty, S. E.

    2002-05-01

    September 11, 2001 will live in infamy. Ideological differences have also led to senseless atrocities in Angola, Congo Republic, Sierra Leone, and Liberia. Hundreds of thousands have died, scores mutilated, and millions displaced. These have gone virtually unnoticed for decades. Unnoticed that is until it became evident that these barbaric acts were fueled by the sale or bartering of diamonds for arms, or by more ingenious ways that are less traceable. There is no end in sight. Industry has long recognized that about 20% of diamonds reaching the open market are smuggled from operating mines, and more recently that an additional 4% originates from conflict diamond sources. Diamond identification by laser inscription, ion implantation, or certification protocols are subject to fraudulent tampering. And these applied methods are thwarted if cutting and polishing centers are infiltrated, or if terrorist facilities are independently established. Mark ups are substantial (40-60%) from raw material to finished product. Tracking the paths of rough stones from mines to faceted gems is impractical because some 30-50 million cts of top quality material, or about 100 million stones, would require branding each year. Moreover, the long standing tradition of site-holdings and the bourse system of mixing or matching diamonds, inadvertently ensures regional anonymity. Conflict diamonds are mined in primary kimberlites and from widely dispersed alluvial fields in tropical jungle. Landscapes, eroded by 1-5 vertical km over 100 Ma, have transformed low grade primary deposits into unconsolidated sedimentary bonanzas. The current value of stones retrieved, by motivated diggers and skillful jiggers, in rebel held territories, is impossible to determine, but in 1993 amounted to tens of millions USD. Diamonds over 100 cts continue to surface at premier prices. Borders are porous, diamonds flow easily, and armed networks are permeable and mobile. Diamonds form at great depths (over 200 km

  19. Tailoring nanocrystalline diamond coated on titanium for osteoblast adhesion.

    Science.gov (United States)

    Pareta, Rajesh; Yang, Lei; Kothari, Abhishek; Sirinrath, Sirivisoot; Xiao, Xingcheng; Sheldon, Brian W; Webster, Thomas J

    2010-10-01

    Diamond coatings with superior chemical stability, antiwear, and cytocompatibility properties have been considered for lengthening the lifetime of metallic orthopedic implants for over a decade. In this study, an attempt to tailor the surface properties of diamond films on titanium to promote osteoblast (bone forming cell) adhesion was reported. The surface properties investigated here included the size of diamond surface features, topography, wettability, and surface chemistry, all of which were controlled during microwave plasma enhanced chemical-vapor-deposition (MPCVD) processes using CH4-Ar-H2 gas mixtures. The hardness and elastic modulus of the diamond films were also determined. H2 concentration in the plasma was altered to control the crystallinity, grain size, and topography of the diamond coatings, and specific plasma gases (O2 and NH3) were introduced to change the surface chemistry of the diamond coatings. To understand the impact of the altered surface properties on osteoblast responses, cell adhesion tests were performed on the various diamond-coated titanium. The results revealed that nanocrystalline diamond (grain sizes diamond and, thus, should be further studied for improving orthopedic applications. Copyright 2010 Wiley Periodicals, Inc. J Biomed Mater Res Part A, 2010.

  20. Diamond bio electronics.

    Science.gov (United States)

    Linares, Robert; Doering, Patrick; Linares, Bryant

    2009-01-01

    The use of diamond for advanced applications has been the dream of mankind for centuries. Until recently this dream has been realized only in the use of diamond for gemstones and abrasive applications where tons of diamonds are used on an annual basis. Diamond is the material system of choice for many applications, but its use has historically been limited due to the small size, high cost, and inconsistent (and typically poor) quality of available diamond materials until recently. The recent development of high quality, single crystal diamond crystal growth via the Chemical Vapor Deposition (CVD) process has allowed physcists and increasingly scientists in the life science area to think beyond these limitations and envision how diamond may be used in advanced applications ranging from quantum computing, to power generation and molecular imaging, and eventually even diamond nano-bots. Because of diamond's unique properties as a bio-compatible material, better understanding of diamond's quantum effects and a convergence of mass production, semiconductor-like fabrication process, diamond now promises a unique and powerful key to the realization of the bio-electronic devices being envisioned for the new era of medical science. The combination of robust in-the-body diamond based sensors, coupled with smart bio-functionalized diamond devices may lead to diamond being the platform of choice for bio-electronics. This generation of diamond based bio-electronic devices would contribute substantially to ushering in a paradigm shift for medical science, leading to vastly improved patient diagnosis, decrease of drug development costs and risks, and improved effectiveness of drug delivery and gene therapy programs through better timed and more customized solutions.

  1. Neutron Detection at JET Using Artificial Diamond Detectors

    International Nuclear Information System (INIS)

    Pillon, M.; Angelone, M.; Lattanzi, D.; Milani, E.; Tucciarone, A.; Verona-Rinati, G.; Popovichev, S.; Murari, A.

    2006-01-01

    Three CVD diamond detectors are installed and operated at Joint European Torus, Culham laboratory. Diamond detectors are very promising detectors to be used in fusion environment due to their radiation hardness, gamma discrimination properties, fast response and spectroscopy properties. The aim of this work is to test and qualify artificial diamond detectors as neutron counters and spectrometers on a large fusion device. Two of these detectors are polycrystalline CVD diamond films of thickness 30 mm and 40 mm respectively while the third detector is a monocrystalline CVD of 110 mm thickness. The first polycrystalline diamond is covered with 4 mm of LiF 95 % enriched in 6 Li and enclosed inside a polyethylene moderator cap. This detector is used with a standard electronic chain made with a charge preamplifier, shaping amplifier and threshold discriminator. It is used to measure the time-dependent total neutron yield produced by JET plasma and its signal is compared with JET fission chambers. The second polycrystalline diamond is connected with a fast (1 GHz) preamplifier and a threshold discriminator via a long (about 100 m) double screened cable. This detector is used to detect the 14 MeV neutrons produced by triton burn-up using the reaction 12 C (n, α) 9 Be which occurs in diamond and a proper discriminator threshold. The response of this detector is fast and the electronic is far from the high radiation environment. Its signal is used in comparison with JET silicon diodes. The third monocrystalline diamond is also connected using a standard electronic and is used to demonstrate the feasibility of 14 MeV neutron spectrometry at about 3% peak resolution taking advantage of the spectrometer properties of monocrystalline diamonds. The results obtained are presented in this work. (author)

  2. Clinical dosimeter based on diamond detector

    International Nuclear Information System (INIS)

    Chervjakov, A.M.; Ljalina, L.I.; Ljutina, G.J.; Khrunov, V.S.; Martynov, S.S.; Popov, S.A.

    2002-01-01

    Full text: Diamond detectors have found application in the relative dosimetry and their parameters have been described elsewhere. Today, the exclusive producer of the diamond detector is the Institute of Physical and Technical Problems, Russia, and exclusive dealer is the PTW-Freiburg. The main features of the diamond detector are good long time stability, suitable range of the energy dependence for photon and electron beams in clinical use, independence of the measured date from temperature and pressure. The high sensitivity per volume unit of the diamond detector (1500 times higher than ionization chamber) allowed using detectors with very small volume (1-5 mm 3 ) and rather simple electronics for ionization current registration. The new dosimeter consists of the diamond detector itself, 40 m registration cable, pre-amplifier, micro-processor block for data handling and absorbed dose calculation using the calibration factor of diamond detector in terms of absorbed dose to water. Dosimeter has the possibility to work with PC using standard RS-232 interface. The main features of the dosimeter are as follows: the range of dose rate measurements for photon, electron and proton beams is within 0.01-1.0 Gy/s; the energy ranges for photons are 0.08-25 MeV, and 4-25 MeV for electrons, with energy dependence no more than ±2%; the main uncertainty of the dose measurements is within ±2%; the pre-irradiation dose for diamond detector is no more than 10 Gy; the sensitive volume of the used diamond detectors is within 1-5 mm 3 ; the weight of the dosimeter no more than 2 kg. The new dosimeter was evaluated at the Central Research Institute of Roentgenology and Radiology, St. Petersburg, Russia to verify its performance. The dosimeter was used as a reference instrument for dose measurements at Cobalt-60 unit, SL75-5 and SL-20 linear accelerators and the test results have shown that the device have met the specifications. It is planned to produce dosimeter as serial device by

  3. Diamond semiconducting devices

    International Nuclear Information System (INIS)

    Polowczyk, M.; Klugmann, E.

    1999-01-01

    Many efforts to apply the semiconducting diamond for construction of electronic elements: resistors, thermistors, photoresistors, piezoresistors, hallotrons, pn diodes, Schottky diodes, IMPATT diodes, npn transistor, MESFETs and MISFETs are reviewed. Considering the possibilities of acceptor and donor doping, electrical resistivity and thermal conductivity of diamond as well as high electric-field breakdown points, that diamond devices could be used at about 30-times higher frequency and more then 8200 times power than silicon devices. Except that, due to high heat resistant of diamond, it is concluded that diamond devices can be used in environment at high temperature, range of 600 o C. (author)

  4. Diamond Synthesis Employing Nanoparticle Seeds

    Science.gov (United States)

    Uppireddi, Kishore (Inventor); Morell, Gerardo (Inventor); Weiner, Brad R. (Inventor)

    2014-01-01

    Iron nanoparticles were employed to induce the synthesis of diamond on molybdenum, silicon, and quartz substrates. Diamond films were grown using conventional conditions for diamond synthesis by hot filament chemical vapor deposition, except that dispersed iron oxide nanoparticles replaced the seeding. This approach to diamond induction can be combined with dip pen nanolithography for the selective deposition of diamond and diamond patterning while avoiding surface damage associated to diamond-seeding methods.

  5. Thermally stable diamond brazing

    Science.gov (United States)

    Radtke, Robert P [Kingwood, TX

    2009-02-10

    A cutting element and a method for forming a cutting element is described and shown. The cutting element includes a substrate, a TSP diamond layer, a metal interlayer between the substrate and the diamond layer, and a braze joint securing the diamond layer to the substrate. The thickness of the metal interlayer is determined according to a formula. The formula takes into account the thickness and modulus of elasticity of the metal interlayer and the thickness of the TSP diamond. This prevents the use of a too thin or too thick metal interlayer. A metal interlayer that is too thin is not capable of absorbing enough energy to prevent the TSP diamond from fracturing. A metal interlayer that is too thick may allow the TSP diamond to fracture by reason of bending stress. A coating may be provided between the TSP diamond layer and the metal interlayer. This coating serves as a thermal barrier and to control residual thermal stress.

  6. Are diamond nanoparticles cytotoxic?

    Science.gov (United States)

    Schrand, Amanda M; Huang, Houjin; Carlson, Cataleya; Schlager, John J; Omacr Sawa, Eiji; Hussain, Saber M; Dai, Liming

    2007-01-11

    Finely divided carbon particles, including charcoal, lampblack, and diamond particles, have been used for ornamental and official tattoos since ancient times. With the recent development in nanoscience and nanotechnology, carbon-based nanomaterials (e.g., fullerenes, nanotubes, nanodiamonds) attract a great deal of interest. Owing to their low chemical reactivity and unique physical properties, nanodiamonds could be useful in a variety of biological applications such as carriers for drugs, genes, or proteins; novel imaging techniques; coatings for implantable materials; and biosensors and biomedical nanorobots. Therefore, it is essential to ascertain the possible hazards of nanodiamonds to humans and other biological systems. We have, for the first time, assessed the cytotoxicity of nanodiamonds ranging in size from 2 to 10 nm. Assays of cell viability such as mitochondrial function (MTT) and luminescent ATP production showed that nanodiamonds were not toxic to a variety of cell types. Furthermore, nanodiamonds did not produce significant reactive oxygen species. Cells can grow on nanodiamond-coated substrates without morphological changes compared to controls. These results suggest that nanodiamonds could be ideal for many biological applications in a diverse range of cell types.

  7. Polycrystalline Diamond Coating of Additively Manufactured Titanium for Biomedical Applications.

    Science.gov (United States)

    Rifai, Aaqil; Tran, Nhiem; Lau, Desmond W; Elbourne, Aaron; Zhan, Hualin; Stacey, Alastair D; Mayes, Edwin L H; Sarker, Avik; Ivanova, Elena P; Crawford, Russell J; Tran, Phong A; Gibson, Brant C; Greentree, Andrew D; Pirogova, Elena; Fox, Kate

    2018-03-14

    Additive manufacturing using selective laser melted titanium (SLM-Ti) is used to create bespoke items across many diverse fields such as medicine, defense, and aerospace. Despite great progress in orthopedic implant applications, such as for "just in time" implants, significant challenges remain with regards to material osseointegration and the susceptibility to bacterial colonization on the implant. Here, we show that polycrystalline diamond coatings on these titanium samples can enhance biological scaffold interaction improving medical implant applicability. The highly conformable coating exhibited excellent bonding to the substrate. Relative to uncoated SLM-Ti, the diamond coated samples showed enhanced mammalian cell growth, enriched apatite deposition, and reduced microbial S. aureus activity. These results open new opportunities for novel coatings on SLM-Ti devices in general and especially show promise for improved biomedical implants.

  8. TSC response of irradiated CVD diamond films

    CERN Document Server

    Borchi, E; Bucciolini, M; Guasti, A; Mazzocchi, S; Pirollo, S; Sciortino, S

    1999-01-01

    CVD diamond films have been irradiated with electrons, sup 6 sup 0 Co photons and protons in order to study the dose response to exposure to different particles and energies and to investigate linearity with dose. The Thermally Stimulated Current (TSC) has been studied as a function of the dose delivered to polymethilmetacrilate (PMMA) in the range from 1 to 12 Gy with 20 MeV electrons from a linear accelerator. The TSC spectrum has revealed the presence of two components with peak temperatures of about 470 and 520 K, corresponding to levels lying in the diamond band gap with activation energies of the order of 0.7 - 1 eV. After the subtraction of the exponential background the charge emitted during the heating scan has been evaluated and has been found to depend linearly on the dose. The thermally emitted charge of the CVD diamond films has also been studied using different particles. The samples have been irradiated with the same PMMA dose of about 2 Gy with 6 and 20 MeV electrons from a Linac, sup 6 sup 0 ...

  9. NEW HIGH STRENGTH AND FASTER DRILLING TSP DIAMOND CUTTERS

    Energy Technology Data Exchange (ETDEWEB)

    Robert Radtke

    2006-01-31

    The manufacture of thermally stable diamond (TSP) cutters for drill bits used in petroleum drilling requires the brazing of two dissimilar materials--TSP diamond and tungsten carbide. The ENDURUS{trademark} thermally stable diamond cutter developed by Technology International, Inc. exhibits (1) high attachment (shear) strength, exceeding 345 MPa (50,000 psi), (2) TSP diamond impact strength increased by 36%, (3) prevents TSP fracture when drilling hard rock, and (4) maintains a sharp edge when drilling hard and abrasive rock. A novel microwave brazing (MWB) method for joining dissimilar materials has been developed. A conventional braze filler metal is combined with microwave heating which minimizes thermal residual stress between materials with dissimilar coefficients of thermal expansion. The process results in preferential heating of the lower thermal expansion diamond material, thus providing the ability to match the thermal expansion of the dissimilar material pair. Methods for brazing with both conventional and exothermic braze filler metals have been developed. Finite element modeling (FEM) assisted in the fabrication of TSP cutters controllable thermal residual stress and high shear attachment strength. Further, a unique cutter design for absorbing shock, the densification of otherwise porous TSP diamond for increased mechanical strength, and diamond ion implantation for increased diamond fracture resistance resulted in successful drill bit tests.

  10. Detection of diamonds

    International Nuclear Information System (INIS)

    Hansen, J.O.; Blondeel, E.J.G.; Taylor, G.T.

    1991-01-01

    Diamond particles are distinguished from non-diamond, associated particles on the basis of their higher refractive index. The particles are brought to a specific location, typically in a stream of water flowing full in a vertical duct, and a beam of collimated electromagnetic radiation is directed at them. An array of radiation detectors is provided to detect refracted and/or reflected radiation. The array is so configured that the responses of the detectors, considered collectively, will be indicative of the presence of a diamond when a diamond is in fact present. However, when a particle having a substantially lower refractive index is present, the responses of the detectors will not be so indicative. The diamond and non-diamond particles can subsequently be sorted from one another

  11. Single crystal diamond detectors grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    Tuve, C.; Angelone, M.; Bellini, V.; Balducci, A.; Donato, M.G.; Faggio, G.; Marinelli, M.; Messina, G.; Milani, E.; Morgada, M.E.; Pillon, M.; Potenza, R.; Pucella, G.; Russo, G.; Santangelo, S.; Scoccia, M.; Sutera, C.; Tucciarone, A.; Verona-Rinati, G.

    2007-01-01

    The detection properties of heteropitaxial (polycrystalline, pCVD) and homoepitaxial (single crystal, scCVD) diamond films grown by microwave chemical vapor deposition (CVD) in the Laboratories of Roma 'Tor Vergata' University are reported. The pCVD diamond detectors were tested with α-particles from different sources and 12 C ions produced by 15MV Tandem accelerator at Southern National Laboratories (LNS) in Catania (Italy). pCVDs were also used to monitor 14MeV neutrons produced by the D-T plasma at Joint European Torus (JET), Culham, U.K. The limit of pCVDs is the poor energy resolution. To overcome this problem, we developed scCVD diamonds using the same reactor parameters that optimized pCVD diamonds. scCVD were grown on a low cost (100) HPHT single crystal substrate. A detector 110μm thick was tested under α-particles and under 14MeV neutron irradiation. The charge collection efficiency spectrum measured under irradiation with a triple α-particle source shows three clearly resolved peaks, with an energy resolution of about 1.1%. The measured spectra under neutron irradiation show a well separated C(n,α 0 ) 9 Be12 reaction peak with an energy spread of 0.5MeV for 14.8MeV neutrons and 0.3MeV for 14.1MeV neutrons, which are fully compatible with the energy spread of the incident neutron beams

  12. Noble gas studies in vapor-growth diamonds: Comparison with shock-produced diamonds and the origin of diamonds in ureilites

    Energy Technology Data Exchange (ETDEWEB)

    Matsuda, Junichi; Fukunaga, Kazuya; Ito, Keisuke (Kobe Univ. (Japan))

    1991-07-01

    The authors synthesized vapor-trowth diamonds by two kinds of Chemical Vapor Deposition (CVD) using microwave (MWCVD) and hot filament (HFCVD) ionization of gases, and examined elemental abundances and isotopic compositions of the noble gases trapped in the diamonds. It is remarkable that strong differences existed in the noble gas concentrations in the two kinds of CVD diamonds: large amounts of noble gases were trapped in the MWCVD diamonds, but not in the HFCVD diamonds. The heavy noble gases (Ar to Xe) in the MWCVD diamonds were highly fractionated compared with those in the ambient atmosphere, and are in good agreement with the calculated fractionation patterns for plasma at an electron temperature of 7,000-9,000 K. These results strongly suggest that the trapping mechanism of noble gases in CVD diamonds is ion implantation during diamond growth. The degrees of fractionation of heavy noble gases were also in good agreement with those in ureilites. The vapor-growth hypothesis is discussed in comparison with the impact-shock hypothesis as a better model for the origin of diamonds in ureilites. The diamond (and graphite, amorphous carbon, too) may have been deposited on early condensates such as Re, Ir, W, etc. This model explains the chemical features of vein material in ureilites; the refractory siderophile elements are enriched in carbon and noble gases and low in normal siderophiles. The vapor-growth model is also compatible with the oxygen isotopic data of ureilites which suggests that nebular processes are primarily responsible for the composition of ureilites.

  13. Friction and wear study of diamond-like carbon gradient coatings on Ti6Al4V substrate prepared by plasma source ion implant-ion beam enhanced deposition

    International Nuclear Information System (INIS)

    Jiang, Shuwen; Jiang Bin; Li Yan; Li Yanrong; Yin Guangfu; Zheng Changqiong

    2004-01-01

    DLC gradient coatings had been deposited on Ti6Al4V alloy substrate by plasma source ion implantation-ion beam enhanced deposition method and their friction and wear behavior sliding against ultra high molecular weight polyethylene counterpart were investigated. The results showed that DLC gradient coated Ti6Al4V had low friction coefficient, which reduced 24, 14 and 10% compared with non-coated Ti6Al4V alloy under dry sliding, lubrication of bovine serum and 0.9% NaCl solution, respectively. DLC gradient coated Ti6Al4V showed significantly improved wear resistance, the wear rate was about half of non-coated Ti6Al4V alloy. The wear of ultra high molecular weight polyethylene counterpart was also reduced. High adhesion to Ti6Al4V substrate of DLC gradient coatings and surface structure played important roles in improved tribological performance, serious oxidative wear was eliminated when DLC gradient coating was applied to the Ti6Al4V alloy

  14. Diamond-cleaning investigations

    International Nuclear Information System (INIS)

    Derry, T.E.

    Four parcels of diamonds which either had or had not been cleaned using the usual techniques, chiefly involving etch in molten potassium nitrate were supplied by De Beers Diamond Research Laboratories. Each parcel contained about 40 stones, amounting to about 10 carats. Half the diamonds in each parcel were cleaned by a standard procedure involving half an hours ultrasonic agitation in a 20% solution of the commercial detergent 'Contrad' which is effectively a surfactant and chelating agent. Visual comparisons by a number of observers who were not told the stones' histories, established that these diamonds generally had a more sparkling appearance after the cleaning procedure had been applied

  15. Optical engineering of diamond

    CERN Document Server

    Rabeau, James R

    2013-01-01

    This is the first comprehensive book on the engineering of diamond optical devices. It will give readers an up-to-date account of the properties of optical quality synthetic diamond (single crystal, nanodiamond and polycrystalline) and reviews the large and growing field of engineering of diamond-based optical devices, with applications in quantum computation, nano-imaging, high performance lasers, and biomedicine. It aims to provide scientists, engineers and physicists with a valuable resource and reference book for the design and performance of diamond-based optical devices.

  16. High energy ion implantation

    International Nuclear Information System (INIS)

    Ziegler, J.F.

    1985-01-01

    High energy ion implantation offers the oppertunity for unique structures in semiconductor processing. The unusual physical properties of such implantations are discussed as well as the special problems in masking and damage annealing. A review is made of proposed circuit structures which involve deep implantation. Examples are: deep buried bipolar collectors fabricated without epitaxy, barrier layers to reduce FET memory sensitivity to soft-fails, CMOS isolation well structures, MeV implantation for customization and correction of completed circuits, and graded reach-throughs to deep active device components. (orig.)

  17. Ridge waveguide fabrication by combining ion implantation and precise dicing on a LiNbO{sub 3} crystal

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Yu-Fan; Wang, Lei; Liu, Peng; Liu, Tao; Zhang, Lian; Huang, Dong-Ting; Wang, Xue-Lin, E-mail: xuelinwang@sdu.edu.cn

    2014-05-01

    A ridge waveguide structure was prepared on a z-cut LiNbO{sub 3} crystal wafer by a combined process of ion implantation and precise dicing. The single-crystal LiNbO{sub 3} was implanted at room temperature using 3 MeV oxygen ions at a fluence of 5 × 10{sup 14} ions/cm{sup 2}. After annealing to 200 °C, ridge structures were formed on the wafer surface by precise diamond blade dicing. Two different ridge widths, 8 and 10 μm, were chosen for comparison. The refractive index profile was reconstructed, and the near-field intensity distribution of the mode was recorded by a CCD camera using the end-face coupling method. FD-BPM was used to simulate the guided mode profile. Transmission and reflection optical microscopy were used to obtain micro-photograph images of the waveguide structure.

  18. Diamond Nucleation Using Polyethene

    Science.gov (United States)

    Morell, Gerardo (Inventor); Makarov, Vladimir (Inventor); Varshney, Deepak (Inventor); Weiner, Brad (Inventor)

    2013-01-01

    The invention presents a simple, non-destructive and non-abrasive method of diamond nucleation using polyethene. It particularly describes the nucleation of diamond on an electrically viable substrate surface using polyethene via chemical vapor deposition (CVD) technique in a gaseous environment.

  19. Diamond films: Historical perspective

    Energy Technology Data Exchange (ETDEWEB)

    Messier, R. [Pennsylvania State Univ., University Park (United States)

    1993-01-01

    This section is a compilation of notes and published international articles about the development of methods of depositing diamond films. Vapor deposition articles are included from American, Russian, and Japanese publications. The international competition to develop new deposition methodologies is stressed. The current status of chemical vapor deposition of diamond is assessed.

  20. Diamond Pixel Detectors

    International Nuclear Information System (INIS)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Doroshenko, J.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foster, J.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Gobbi, B.; Grim, G.P.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Lander, R.; Logiudice, A.; Lu, R.; Lynne, L.M.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Perera, L.; Pirollo, S.; Plano, R.; Procario, M.; Riester, J.L.; Roe, S.; Rott, C.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Zoeller, M.

    2001-01-01

    Diamond based pixel detectors are a promising radiation-hard technology for use at the LHC. We present first results on a CMS diamond pixel sensor. With a threshold setting of 2000 electrons, an average pixel efficiency of 78% was obtained for normally incident minimum ionizing particles

  1. Diamond Pixel Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D' Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Doroshenko, J.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foster, J.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Gobbi, B.; Grim, G.P.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Lander, R.; Logiudice, A.; Lu, R.; Lynne, L.M.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Perera, L. E-mail: perera@physics.rutgers.edu; Pirollo, S.; Plano, R.; Procario, M.; Riester, J.L.; Roe, S.; Rott, C.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Zoeller, M

    2001-06-01

    Diamond based pixel detectors are a promising radiation-hard technology for use at the LHC. We present first results on a CMS diamond pixel sensor. With a threshold setting of 2000 electrons, an average pixel efficiency of 78% was obtained for normally incident minimum ionizing particles.

  2. Investing in Diamonds

    NARCIS (Netherlands)

    Renneboog, Luc

    2015-01-01

    This paper examines the risk-return characteristics of investment grade gems (white diamonds, colored diamonds and other types of gems including sapphires, rubies, and emeralds). The transactions are coming from gem auctions and span the period 1999-2012. Over our time frame, the annual nominal USD

  3. Investigation of electrically-active deep levels in single-crystalline diamond by particle-induced charge transient spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kada, W., E-mail: kada.wataru@gunma-u.ac.jp [Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Kambayashi, Y.; Ando, Y. [Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Onoda, S. [Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Umezawa, H.; Mokuno, Y. [National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan); Shikata, S. [Kwansei Gakuin Univ., 2-1, Gakuen, Mita, Hyogo 669-1337 (Japan); Makino, T.; Koka, M. [Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Hanaizumi, O. [Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Kamiya, T.; Ohshima, T. [Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan)

    2016-04-01

    To investigate electrically-active deep levels in high-resistivity single-crystalline diamond, particle-induced charge transient spectroscopy (QTS) techniques were performed using 5.5 MeV alpha particles and 9 MeV carbon focused microprobes. For unintentionally-doped (UID) chemical vapor deposition (CVD) diamond, deep levels with activation energies of 0.35 eV and 0.43 eV were detected which correspond to the activation energy of boron acceptors in diamond. The results suggested that alpha particle and heavy ion induced QTS techniques are the promising candidate for in-situ investigation of deep levels in high-resistivity semiconductors.

  4. Regrowth zones in laser annealed radiation damaged diamond

    International Nuclear Information System (INIS)

    Jamieson, D.N.; Prawer, S.; Dooley, S.P.; Kalish, R.; Technion-Israel Inst. of Tech., Haifa

    1993-01-01

    Focused laser annealing of ion implanted diamond with a 15 μm diameter laser spot produces as variety of effects that depend on the power density of the laser. Channeling Contrast Microscopy (CCM) provides a relatively straight forward, rapid, method to analyse the annealed regions of the diamond to characterize the effects. In order of increasing laser power density, effects that are observed include: regrowth of the end of range damage of the ion implantation, formation of a buried graphitic layer and complete graphitization of the surface of the diamond down to the bottom of the original damage layer. Information provided by CCM leads to an understanding the causes of these effects and provides insight into the carbon phase diagram in the neighbourhood of the graphite to diamond phase transition. Analysis of the effects of laser annealing by CCM are complicated by the swelling of the diamond lattice caused by the original ion implantation, compaction following regrowth and the effect of the analysis beam irradiation itself. 12 refs., 5 figs

  5. Radiation tolerance of CVD diamond detectors for pions and protons

    Science.gov (United States)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L. S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J. L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.

    2002-01-01

    The paper gives new results on the radiation tolerance of CVD diamond for irradiation with 300 MeV/ c pions and 24 GeV/ c protons. The measured charge signal spectrum is compared at several irradiation levels with the spectrum calculated by a model. Irradiation by particles causes damage leading to a decrease of the charge signal. However, both the measurements and the outcome from the model show that for tracker applications this drawback is at least partly counterbalanced by a narrowing of the distribution curve of the charge signal. As a result, the efficiency of a CVD diamond tracker is less affected by irradiation than the mean charge signal.

  6. Polycrystalline-Diamond MEMS Biosensors Including Neural Microelectrode-Arrays

    Directory of Open Access Journals (Sweden)

    Donna H. Wang

    2011-08-01

    Full Text Available Diamond is a material of interest due to its unique combination of properties, including its chemical inertness and biocompatibility. Polycrystalline diamond (poly-C has been used in experimental biosensors that utilize electrochemical methods and antigen-antibody binding for the detection of biological molecules. Boron-doped poly-C electrodes have been found to be very advantageous for electrochemical applications due to their large potential window, low background current and noise, and low detection limits (as low as 500 fM. The biocompatibility of poly-C is found to be comparable, or superior to, other materials commonly used for implants, such as titanium and 316 stainless steel. We have developed a diamond-based, neural microelectrode-array (MEA, due to the desirability of poly-C as a biosensor. These diamond probes have been used for in vivo electrical recording and in vitro electrochemical detection. Poly-C electrodes have been used for electrical recording of neural activity. In vitro studies indicate that the diamond probe can detect norepinephrine at a 5 nM level. We propose a combination of diamond micro-machining and surface functionalization for manufacturing diamond pathogen-microsensors.

  7. Study of the triton-burnup process in different JET scenarios using neutron monitor based on CVD diamond

    Energy Technology Data Exchange (ETDEWEB)

    Nemtsev, G., E-mail: g.nemtsev@iterrf.ru; Amosov, V.; Meshchaninov, S.; Rodionov, R. [Institution “Project center ITER,” Moscow (Russian Federation); Popovichev, S. [CCFE, Culham Science Centre, Abingdon OX14 3DB (United Kingdom); Collaboration: EUROfusion Consortium, JET, Culham Science Centre, Abingdon OX14 3DB (United Kingdom)

    2016-11-15

    We present the results of analysis of triton burn-up process using the data from diamond detector. Neutron monitor based on CVD diamond was installed in JET torus hall close to the plasma center. We measure the part of 14 MeV neutrons in scenarios where plasma current varies in a range of 1-3 MA. In this experiment diamond neutron monitor was also able to detect strong gamma bursts produced by runaway electrons arising during the disruptions. We can conclude that CVD diamond detector will contribute to the study of fast particles confinement and help predict the disruption events in future tokamaks.

  8. Friction and wear properties of diamonds and diamond coatings

    International Nuclear Information System (INIS)

    Hayward, I.P.

    1991-01-01

    The recent development of chemical vapor deposition techniques for diamond growth enables bearings to be designed which exploit diamond's low friction and extreme resistance to wear. However, currently produced diamond coatings differ from natural diamond surfaces in that they are polycrystalline and faceted, and often contain appreciable amounts of non-diamond material (i.e. graphitic or amorphous carbon). Roughness, in particular, influences the friction and wear properties; rough coatings severely abrade softer materials, and can even wear natural diamond sliders. Nevertheless, the best available coatings exhibit friction coefficients as low as those of natural diamond and are highly resistant to wear. This paper reviews the tribological properties of natural diamond, and compares them with those of chemical vapor deposited diamond coatings. Emphasis is placed on the roles played by roughness and material transfer in controlling frictional behavior. (orig.)

  9. High energy ion beam induced modifications in diamond and diamond like carbon thin films

    International Nuclear Information System (INIS)

    Dilawar, N.; Sah, S.; Mehta, B.R.; Vankar, V.D.

    1996-01-01

    Diamond and DLC films deposited using hot-filament chemical vapour deposition technique at various parameters were irradiated with 50 MeV Si 4+ ions. The resulting microstructural changes were studied using X-ray diffraction and scanning electron microscopy. All the samples showed the development of β-SiC and hexagonal carbon phases at the expense of the diamond/DLC phase. The ERD analysis was carried out to determine the hydrogen concentration and its distribution in DLC films. The absolute hydrogen concentration in DLC samples is of the order of 10 22 atoms/cm 3 which gets depleted on irradiation. The DLC samples show a clear dependence of hydrogen content on the deposition parameters. (author)

  10. Diamond encapsulated photovoltaics for transdermal power delivery.

    Science.gov (United States)

    Ahnood, A; Fox, K E; Apollo, N V; Lohrmann, A; Garrett, D J; Nayagam, D A X; Karle, T; Stacey, A; Abberton, K M; Morrison, W A; Blakers, A; Prawer, S

    2016-03-15

    A safe, compact and robust means of wireless energy transfer across the skin barrier is a key requirement for implantable electronic devices. One possible approach is photovoltaic (PV) energy delivery using optical illumination at near infrared (NIR) wavelengths, to which the skin is highly transparent. In the work presented here, a subcutaneously implantable silicon PV cell, operated in conjunction with an external NIR laser diode, is developed as a power delivery system. The biocompatibility and long-term biostability of the implantable PV is ensured through the use of an hermetic container, comprising a transparent diamond capsule and platinum wire feedthroughs. A wavelength of 980 nm is identified as the optimum operating point based on the PV cell's external quantum efficiency, the skin's transmission spectrum, and the wavelength dependent safe exposure limit of the skin. In bench-top experiments using an external illumination intensity of 0.7 W/cm(2), a peak output power of 2.7 mW is delivered to the implant with an active PV cell dimension of 1.5 × 1.5 × 0.06 mm(3). This corresponds to a volumetric power output density of ~20 mW/mm(3), significantly higher than power densities achievable using inductively coupled coil-based approaches used in other medical implant systems. This approach paves the way for further ministration of bionic implants. Copyright © 2015 Elsevier B.V. All rights reserved.

  11. Functionalized diamond nanoparticles

    KAUST Repository

    Beaujuge, Pierre M.; El Tall, Omar; Raja, Inam U.

    2014-01-01

    A diamond nanoparticle can be functionalized with a substituted dienophile under ambient conditions, and in the absence of catalysts or additional reagents. The functionalization is thought to proceed through an addition reaction.

  12. Functionalized diamond nanoparticles

    KAUST Repository

    Beaujuge, Pierre M.

    2014-10-21

    A diamond nanoparticle can be functionalized with a substituted dienophile under ambient conditions, and in the absence of catalysts or additional reagents. The functionalization is thought to proceed through an addition reaction.

  13. Diamond Jubilee Meeting

    Indian Academy of Sciences (India)

    1994-10-01

    Oct 1, 1994 ... Science, Bangalore, the Diamond Jubilee Annual. Meeting will be held in ... "The fascination of statistics" .... on post Hartree-Fock methods, highly correlated systems ..... Gold Medal of the National Institute of Social. Sciences ...

  14. Quantum Computing in Diamond

    National Research Council Canada - National Science Library

    Prawer, Steven

    2007-01-01

    The aim of this proposal is to demonstrate the key elements needed to construct a logical qubit in diamond by exploiting the remarkable quantum properties of the nitrogen-vacancy (NV) optical centre...

  15. Fano factor evaluation of diamond detectors for alpha particles

    Energy Technology Data Exchange (ETDEWEB)

    Shimaoka, Takehiro; Kaneko, Junichi H.; Tsubota, Masakatsu; Shimmyo, Hiroaki [Graduate School of Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo, Hokkaido, 060-8628 (Japan); Sato, Yuki [Naraha Remote Technology Development Center, Japan Atomic Energy Agency, Naraha-machi, Futaba-gun, Fukushima, 979-0513 (Japan); Chayahara, Akiyoshi; Umezawa, Hitoshi; Mokuno, Yoshiaki [Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka, 563-8577 (Japan); Watanabe, Hideyuki [Research Institute for Electronics and Photonics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8565 (Japan)

    2016-10-15

    This report is the first describing experimental evaluation of Fano factor for diamond detectors. High-quality self-standing chemical vapor deposited diamond samples were produced using lift-off method. Alpha-particle induced charge measurements were taken for three samples. A 13.1 ±0.07 eV of the average electron-hole pair creation energy and excellent energy resolution of approximately 0.3% were found for 5.486 MeV alpha particles from an {sup 241}Am radioactive source. The best Fano factor for 5.486 MeV alpha particles, calculated from experimentally obtained epsilon values and the detector intrinsic energy resolution, was 0.382 ± 0.007. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Demonstrating diamond wire cutting of the TFTR

    International Nuclear Information System (INIS)

    Rule, K.; Perry, E.; Larson, S.; Viola, M.

    2000-01-01

    The Tokamak Fusion Test Reactor (TFTR) ceased operation in April 1997 and decommissioning commenced in October 1999. The deuterium-tritium fusion experiments resulted in contaminating the vacuum vessel with tritium and activating the materials with 14 Mev neutrons. The total tritium content within the vessel is in excess of 7,000 Curies while dose rates approach 50 mRem/hr. These radiological hazards along with the size of the Tokamak (100 cubic meters) present a unique and challenging task for dismantling. Plasma arc cutting is the current baseline technology for the dismantlement of fission reactors. This technology is typically used because of its faster cutting times. Alternatively, an innovative approach for dismantlement of the TFTR is the use of diamond wire cutting technology. Recent improvements in diamond wire technology have allowed the cutting of carbon steel components such as pipe, plate, and tube bundles in heat exchangers. Some expected benefits of this technology include: significantly reduction in airborne contaminates, reduced personnel exposure, a reduced risk of spread of tritium contamination, and reduced overall costs as compared to using plasma arc cutting. This paper will provide detailed results of the diamond wire cutting demonstration that was completed in September of 1999, on a mock-up of this complex reactor. The results will identify cost, safety, industrial and engineering parameters, and the related performance of each situation

  17. Demonstrating diamond wire cutting of the TFTR

    Energy Technology Data Exchange (ETDEWEB)

    Rule, K.; Perry, E.; Larson, S.; Viola, M. [and others

    2000-02-24

    The Tokamak Fusion Test Reactor (TFTR) ceased operation in April 1997 and decommissioning commenced in October 1999. The deuterium-tritium fusion experiments resulted in contaminating the vacuum vessel with tritium and activating the materials with 14 Mev neutrons. The total tritium content within the vessel is in excess of 7,000 Curies while dose rates approach 50 mRem/hr. These radiological hazards along with the size of the Tokamak (100 cubic meters) present a unique and challenging task for dismantling. Plasma arc cutting is the current baseline technology for the dismantlement of fission reactors. This technology is typically used because of its faster cutting times. Alternatively, an innovative approach for dismantlement of the TFTR is the use of diamond wire cutting technology. Recent improvements in diamond wire technology have allowed the cutting of carbon steel components such as pipe, plate, and tube bundles in heat exchangers. Some expected benefits of this technology include: significantly reduction in airborne contaminates, reduced personnel exposure, a reduced risk of spread of tritium contamination, and reduced overall costs as compared to using plasma arc cutting. This paper will provide detailed results of the diamond wire cutting demonstration that was completed in September of 1999, on a mock-up of this complex reactor. The results will identify cost, safety, industrial and engineering parameters, and the related performance of each situation.

  18. Transient current induced in thin film diamonds by swift heavy ions

    International Nuclear Information System (INIS)

    Sato, Shin-ichiro; Makino, Takahiro; Ohshima, Takeshi; Kamiya, Tomihiro; Kada, Wataru

    2017-01-01

    Single crystal diamond is a suitable material for the next generation particle detectors because of the superior electrical properties and the high radiation tolerance. In order to investigate charge transport properties of diamond particle detectors, transient currents generated in diamonds by single swift heavy ions (26 MeV O 5+ and 45 MeV Si 7+ ) are investigated. We also measured two dimensional maps of transient currents by single ion hits. In the case of 50 μm-thick diamond, both the signal height and the collected charge are reduced by the subsequent ion hits and the charge collection time is extended. Our results are thought to be attributable to the polarization effect in diamond and it appears only when the transient current is dominated by hole current. In the case of 6 μm-thick diamond membrane, an “island” structure is found in the 2D map of transient currents. Signals in the islands shows different applied bias dependence from signals in other regions, indicating different crystal and/or metal contact quality. Simulation study of transient currents based on the Shockley-Ramo theorem clarifies that accumulation of space charges changes distribution of electric field in diamond and causes the polarization effect.

  19. The construction of a diamond detector for ionising radiation

    International Nuclear Information System (INIS)

    Burgemeister, E.A.; Schouten, W.

    1984-01-01

    The construction, performance and radiotherapy applications of synthetic diamond detectors are described. A diamond with linear dimensions of 0.8 mm and two opposite faces of graphite is glued to the inside of an aluminium cap of 2 mm diameter and 0.1 mm wall thickness. An aluminium bar is glued to the other graphite face and fixed inside the cap. The cap and bar are connected to electrical leads, so that heavy metals are at some distance from the radiosensitive element. The response to 60 Co shows rotational symmetry when the detector is irradiated perpendicularly to its axis. The effective measurement point lies nearly on the axis. The radiosensitivity of diamond is independent of the photon energy at effective values between 0.2 and 3 MeV and decreases gradually below 0.2 MeV. Because of their small size, diamond detectors prove very useful for accurate measurement of steep dose gradients. They are therefore applied in electron beams and in the penumbra and build-up regions of megavolt photon beams. The construction and electrical specifications of the detector also allow for dosimetry in vivo, e.g. rectal dosimetry. (author)

  20. A molecular dynamics study of energetic particle bombardment on diamond

    International Nuclear Information System (INIS)

    Li Rongbin; Dai Yongbing; Hu Xiaojun; Shen Hesheng; He Xianchang

    2003-01-01

    Molecular dynamic simulations, utilizing the Tersoff many-body potential, are used to investigate the microscopic processes of a single boron atom with an energy of 500 eV implanted into the diamond (001) 2 x 1 reconstructed surface. By calculating the variation of the mean coordination number with time, the lifetime of a thermal spike created by B bombardment is about 0.18 ps. Formation of the split-interstitial composed of projectile and lattice atom (B-C) is observed. The total potential energy of the system decreases about 0.56 eV with a stable B split-interstitial existing in diamond. Lattice relaxations in the diamond (001) 2 x 1 reconstructed surface or near surface of the simulated have been discussed, and the results show that the outermost layer atoms tend to move inward and other atoms move outward, while the interplanar distance between the outermost layer and the second layer has been shortened by 15%, compared with its starting interplanar distance. Stress distribution in the calculated diamond configuration is inhomogeneous. After boron implanted into diamond with an energy of 500 eV, there is an excess of compressively stressed atoms in the lattice, which induces the total stress being compressive

  1. Diamond anvil cells using boron-doped diamond electrodes covered with undoped diamond insulating layer

    Science.gov (United States)

    Matsumoto, Ryo; Yamashita, Aichi; Hara, Hiroshi; Irifune, Tetsuo; Adachi, Shintaro; Takeya, Hiroyuki; Takano, Yoshihiko

    2018-05-01

    Diamond anvil cells using boron-doped metallic diamond electrodes covered with undoped diamond insulating layers have been developed for electrical transport measurements under high pressure. These designed diamonds were grown on a bottom diamond anvil via a nanofabrication process combining microwave plasma-assisted chemical vapor deposition and electron beam lithography. The resistance measurements of a high-quality FeSe superconducting single crystal under high pressure were successfully demonstrated by just putting the sample and gasket on the bottom diamond anvil directly. The superconducting transition temperature of the FeSe single crystal was increased to up to 43 K by applying uniaxial-like pressure.

  2. Diamond pixel modules

    International Nuclear Information System (INIS)

    Asner, D.; Barbero, M.; Bellini, V.; Belyaev, V.; Brom, J-M.; Bruzzi, M.; Chren, D.; Cindro, V.; Claus, G.; Cristinziani, M.; Costa, S.; D'Alessandro, R.; Boer, W. de; Dobos, D.; Dolenc, I.; Dulinski, W.; Duris, J.; Eremin, V.; Eusebi, R.; Frais-Koelbl, H.

    2011-01-01

    With the commissioning of the LHC in 2010 and upgrades expected in 2015, ATLAS and CMS are planning to upgrade their innermost tracking layers with radiation hard technologies. Chemical Vapor Deposition diamond has been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle, CDF and all LHC experiments. This material is now being considered as a sensor material for use very close to the interaction region where the most extreme radiation conditions exist. Recently the RD42 collaboration constructed, irradiated and tested polycrystalline and single-crystal chemical vapor deposition diamond sensors to the highest fluences expected at the super-LHC. We present beam test results of chemical vapor deposition diamond up to fluences of 1.8x10 16 protons/cm 2 illustrating that both polycrystalline and single-crystal chemical vapor deposition diamonds follow a single damage curve. We also present beam test results of irradiated complete diamond pixel modules.

  3. Diamond pixel modules

    Energy Technology Data Exchange (ETDEWEB)

    Asner, D. [Carleton University, Ottawa (Canada); Barbero, M. [Universitaet Bonn (Germany); Bellini, V. [INFN/University of Catania (Italy); Belyaev, V. [MEPHI Institute, Moscow (Russian Federation); Brom, J-M. [IPHC, Strasbourg (France); Bruzzi, M. [INFN/University of Florence (Italy); Chren, D. [Czech Technical University, Prague (Czech Republic); Cindro, V. [Jozef Stefan Institute, Ljubljana (Slovenia); Claus, G. [IPHC, Strasbourg (France); Cristinziani, M. [Universitaet Bonn (Germany); Costa, S. [INFN/University of Catania (Italy); D' Alessandro, R. [Department of Energetics/INFN Florence (Italy); Boer, W. de [Universitaet Karlsruhe, Karlsruhe (Germany); Dobos, D. [CERN, Geneva (Switzerland); Dolenc, I. [Jozef Stefan Institute, Ljubljana (Slovenia); Dulinski, W. [IPHC, Strasbourg (France); Duris, J. [UCLA, Los Angeles, CA (United States); Eremin, V. [Ioffe Institute, St. Petersburg (Russian Federation); Eusebi, R. [FNAL, Batavia (United States); Frais-Koelbl, H. [Fachhochschule fuer Wirtschaft und Technik, Wiener Neustadt (Austria)

    2011-04-21

    With the commissioning of the LHC in 2010 and upgrades expected in 2015, ATLAS and CMS are planning to upgrade their innermost tracking layers with radiation hard technologies. Chemical Vapor Deposition diamond has been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle, CDF and all LHC experiments. This material is now being considered as a sensor material for use very close to the interaction region where the most extreme radiation conditions exist. Recently the RD42 collaboration constructed, irradiated and tested polycrystalline and single-crystal chemical vapor deposition diamond sensors to the highest fluences expected at the super-LHC. We present beam test results of chemical vapor deposition diamond up to fluences of 1.8x10{sup 16} protons/cm{sup 2} illustrating that both polycrystalline and single-crystal chemical vapor deposition diamonds follow a single damage curve. We also present beam test results of irradiated complete diamond pixel modules.

  4. Nanocrystalline diamond coatings for machining

    Energy Technology Data Exchange (ETDEWEB)

    Frank, M.; Breidt, D.; Cremer, R. [CemeCon AG, Wuerselen (Germany)

    2007-07-01

    This history of CVD diamond synthesis goes back to the fifties of the last century. However, the scientific and economical potential was only gradually recognized. In the eighties, intensive worldwide research on CVD diamond synthesis and applications was launched. Industrial products, especially diamond-coated cutting tools, were introduced to the market in the middle of the nineties. This article shows the latest developments in this area, which comprises nanocrystalline diamond coating structures. (orig.)

  5. Ionization signals from diamond detectors in fast-neutron fields

    Energy Technology Data Exchange (ETDEWEB)

    Weiss, C. [European Organization for Nuclear Research (CERN), Geneva (Switzerland); CIVIDEC Instrumentation, Wien (Austria); Frais-Koelbl, H. [University of Applied Sciences, Wiener Neustadt (Austria); Griesmayer, E.; Kavrigin, P. [CIVIDEC Instrumentation, Wien (Austria); Vienna University of Technology, Wien (Austria)

    2016-09-15

    In this paper we introduce a novel analysis technique for measurements with single-crystal chemical vapor deposition (sCVD) diamond detectors in fast-neutron fields. This method exploits the unique electronic property of sCVD diamond sensors that the signal shape of the detector current is directly proportional to the initial ionization profile. In fast-neutron fields the diamond sensor acts simultaneously as target and sensor. The interaction of neutrons with the stable isotopes {sup 12}C and {sup 13}C is of interest for fast-neutron diagnostics. The measured signal shapes of detector current pulses are used to identify individual types of interactions in the diamond with the goal to select neutron-induced reactions in the diamond and to suppress neutron-induced background reactions as well as γ-background. The method is verified with experimental data from a measurement in a 14.3 MeV neutron beam at JRC-IRMM, Geel/Belgium, where the {sup 13}C(n, α){sup 10}Be reaction was successfully extracted from the dominating background of recoil protons and γ-rays and the energy resolution of the {sup 12}C(n, α){sup 9}Be reaction was substantially improved. The presented analysis technique is especially relevant for diagnostics in harsh radiation environments, like fission and fusion reactors. It allows to extract the neutron spectrum from the background, and is particularly applicable to neutron flux monitoring and neutron spectroscopy. (orig.)

  6. Heavy-ion irradiation induced diamond formation in carbonaceous materials

    International Nuclear Information System (INIS)

    Daulton, T. L.

    1999-01-01

    The basic mechanisms of metastable phase formation produced under highly non-equilibrium thermodynamic conditions within high-energy particle tracks are investigated. In particular, the possible formation of diamond by heavy-ion irradiation of graphite at ambient temperature is examined. This work was motivated, in part, by earlier studies which discovered nanometer-grain polycrystalline diamond aggregates of submicron-size in uranium-rich carbonaceous mineral assemblages of Precambrian age. It was proposed that the radioactive decay of uranium formed diamond in the fission particle tracks produced in the carbonaceous minerals. To test the hypothesis that nanodiamonds can form by ion irradiation, fine-grain polycrystalline graphite sheets were irradiated with 400 MeV Kr ions. The ion irradiated graphite (and unirradiated graphite control) were then subjected to acid dissolution treatments to remove the graphite and isolate any diamonds that were produced. The acid residues were then characterized by analytical and high-resolution transmission electron microscopy. The acid residues of the ion-irradiated graphite were found to contain ppm concentrations of nanodiamonds, suggesting that ion irradiation of bulk graphite at ambient temperature can produce diamond

  7. Preliminary viability studies of fibroblastic cells cultured on microcrystalline and nanocrystalline diamonds produced by chemical vapour deposition method

    Directory of Open Access Journals (Sweden)

    Ana Amélia Rodrigues

    2013-02-01

    Full Text Available Implant materials used in orthopedics surgery have demonstrated some disadvantages, such as metallic corrosion processes, generation of wear particles, inflammation reactions and bone reabsorption in the implant region. The diamond produced through hot-filament chemical vapour deposition method is a new potential biomedical material due to its chemical inertness, extreme hardness and low coefficient of friction. In the present study we analysis two samples: the microcrystalline diamond and the nanocrystalline diamond. The aim of this study was to evaluate the surface properties of the diamond samples by scanning electron microscopy, Raman spectroscopy and atomic force microscopy. Cell viability and morphology were assessed using thiazolyl blue tetrazolium bromide, cytochemical assay and scanning electron microscopy, respectively. The results revealed that the two samples did not interfere in the cell viability, however the proliferation of fibroblasts cells observed was comparatively higher with the nanocrystalline diamond.

  8. Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHC

    Science.gov (United States)

    Meier, D.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Foulon, F.; Friedl, M.; Jany, C.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Manfredi, P. F.; Marshall, R. D.; Mishina, M.; Le Normand, F.; Pan, L. S.; Palmieri, V. G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Turchetta, R.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

    1999-04-01

    CVD diamond shows promising properties for use as a position-sensitive detector for experiments in the highest radiation areas at the Large Hadron Collider. In order to study the radiation hardness of diamond we exposed CVD diamond detector samples to 24 Gev/ c and 500 Mev protons up to a fluence of 5×10 15 p/cm 2. We measured the charge collection distance, the average distance electron-hole pairs move apart in an external electric field, and leakage currents before, during, and after irradiation. The charge collection distance remains unchanged up to 1×10 15 p/cm 2 and decreases by ≈40% at 5×10 15 p/cm 2. Leakage currents of diamond samples were below 1 pA before and after irradiation. The particle-induced currents during irradiation correlate well with the proton flux. In contrast to diamond, a silicon diode, which was irradiated for comparison, shows the known large increase in leakage current. We conclude that CVD diamond detectors are radiation hard to 24 GeV/ c and 500 MeV protons up to at least 1×10 15p/cm 2 without signal loss.

  9. Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHC

    Energy Technology Data Exchange (ETDEWEB)

    Meier, D. E-mail: dirk.meier@cern.ch.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Foulon, F.; Friedl, M.; Jany, C.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Manfredi, P.F.; Marshall, R.D.; Mishina, M.; Le Normand, F.; Pan, L.S.; Palmieri, V.G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Turchetta, R.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M

    1999-04-21

    CVD diamond shows promising properties for use as a position-sensitive detector for experiments in the highest radiation areas at the Large Hadron Collider. In order to study the radiation hardness of diamond we exposed CVD diamond detector samples to 24 Gev/c and 500 Mev protons up to a fluence of 5x10{sup 15} p/cm{sup 2}. We measured the charge collection distance, the average distance electron-hole pairs move apart in an external electric field, and leakage currents before, during, and after irradiation. The charge collection distance remains unchanged up to 1x10{sup 15} p/cm{sup 2} and decreases by {approx}40% at 5x10{sup 15} p/cm{sup 2}. Leakage currents of diamond samples were below 1 pA before and after irradiation. The particle-induced currents during irradiation correlate well with the proton flux. In contrast to diamond, a silicon diode, which was irradiated for comparison, shows the known large increase in leakage current. We conclude that CVD diamond detectors are radiation hard to 24 GeV/c and 500 MeV protons up to at least 1x10{sup 15}p/cm{sup 2} without signal loss.

  10. Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHC

    International Nuclear Information System (INIS)

    Meier, D.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Foulon, F.; Friedl, M.; Jany, C.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Manfredi, P.F.; Marshall, R.D.; Mishina, M.; Le Normand, F.; Pan, L.S.; Palmieri, V.G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Turchetta, R.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.

    1999-01-01

    CVD diamond shows promising properties for use as a position-sensitive detector for experiments in the highest radiation areas at the Large Hadron Collider. In order to study the radiation hardness of diamond we exposed CVD diamond detector samples to 24 Gev/c and 500 Mev protons up to a fluence of 5x10 15 p/cm 2 . We measured the charge collection distance, the average distance electron-hole pairs move apart in an external electric field, and leakage currents before, during, and after irradiation. The charge collection distance remains unchanged up to 1x10 15 p/cm 2 and decreases by ∼40% at 5x10 15 p/cm 2 . Leakage currents of diamond samples were below 1 pA before and after irradiation. The particle-induced currents during irradiation correlate well with the proton flux. In contrast to diamond, a silicon diode, which was irradiated for comparison, shows the known large increase in leakage current. We conclude that CVD diamond detectors are radiation hard to 24 GeV/c and 500 MeV protons up to at least 1x10 15 p/cm 2 without signal loss

  11. CVD Diamond, DLC, and c-BN Coatings for Solid Film Lubrication

    Science.gov (United States)

    Miyoshi, Kazuhisa

    1998-01-01

    When the main criteria for judging coating performance were coefficient of friction and wear rate, which had to be less than 0.1 and 10(exp -6) mm(exp 3)/N-m, respectively, carbon- and nitrogen-ion-implanted, fine-grain CVD diamond and DLC ion beam deposited on fine-grain CVD diamond met the requirements regardless of environment (vacuum, nitrogen, and air).

  12. Biofunctionalization of diamond microelectrodes

    Energy Technology Data Exchange (ETDEWEB)

    Reitinger, Andreas Adam; Lud, Simon Quartus; Stutzmann, Martin; Garrido, Jose Antonio [Walter Schottky Institut, TU Muenchen (Germany); Hutter, Naima Aurelia; Richter, Gerhard; Jordan, Rainer [WACKER-Chair of Macromolecular Chemistry, TU Muenchen (Germany)

    2010-07-01

    In this work we present two main routes for the biofunctionalization of nanocrystalline diamond films, aiming at the application of diamond microelectrodes as amperometric biosensors. We report on direct covalent grafting of biomolecules on nanocrystalline diamond films via diazonium monophenyls and biphenyls as well as other linker molecules, forming self-assembled monolayers on the diamond surface. Monolayers with different functional head groups have been characterized. Patterning of the available functional groups using electron beam-induced chemical lithography allows the selective preparation of well-localized docking sites for the immobilization of biomolecules. Furthermore, polymer brushes are expected to enable novel paths for designing more advanced biosensing schemes, incorporating multifunctional groups and a higher loading capacity for biomolecules. Here, we focus on the preparation of polymer grafts by self-initiated photografting and photopolymerization. Further chemical modification of the grafted polymer brushes results in the introduction of additional functional molecules, paving the way for the incorporation of more complex molecular structures such as proteins. In a comparative study we investigate the advantages and disadvantages of both approaches.

  13. CVD diamond - fundamental phenomena

    Energy Technology Data Exchange (ETDEWEB)

    Yarbrough, W.A. [Pennsylvania State Univ., University Park (United States)

    1993-01-01

    This compilation of figures and diagrams addresses the basic physical processes involved in the chemical vapor deposition of diamond. Different methods of deposition are illustrated. For each method, observations are made of the prominent advantages and disadvantages of the technique. Chemical mechanisms of nucleation are introduced.

  14. A study of defects in diamond

    International Nuclear Information System (INIS)

    Hunt, D.C.

    1999-01-01

    Defects, intrinsic and extrinsic, in natural and synthetic diamond, have been studied using Electron Paramagnetic Resonance (EPR) and optical absorption techniques. EPR measurements have been used in conjunction with infrared absorption to identify the defect-induced one-phonon infrared spectra produced by ionised single substitutional nitrogen, N s + . This N s + spectrum is characterised by a sharp peak at the Raman energy, 1332 cm -1 , accompanied by several broader resonances at 950(5), 1050(5), and 1095(5) cm -1 . Detailed concentration measurements show that a concentration of 5.5(5) ppm gives rise to an absorption of 1 cm -1 at 1332 cm -1 . The optical absorption band ND1, identified as the negative vacancy (V - ), is frequently used by diamond spectroscopists to measure the concentration of V - . Isoya has identified V - in the EPR spectra of irradiated diamond. The accuracy of EPR in determining concentrations, has been used to correlate the integrated absorption of the ND1 zero-phonon line to the concentration of V - centres. The parameter derived from this correlation is ∼16 times smaller than the previously accepted value obtained by indirect methods. A systematic study has been made - using EPR and optical absorption techniques - of synthetic type IIa diamonds, which have been irradiated with 2 MeV electrons in a specially developed dewar, allowing irradiation down to a measured sample temperature of 100K. Measurement of defect creation rates of the neutral vacancy and EPR defects, show a radical difference in the production rate of the EPR defect R2 between irradiation with the sample held at 100K and 350K. At 100K its production rate is 1.1(1) cm -1 , ∼10 times greater that at 350K. Observation of the di- -split interstitial (Ri) after irradiation at 100K proves the self-interstitial in diamond must be mobile at 100K, under the conditions of irradiation. Further study of the properties of the R2 defect (the most dominant EPR after electron

  15. Electrochemical Behavior of Biomedical Titanium Alloys Coated with Diamond Carbon in Hanks' Solution

    Science.gov (United States)

    Gnanavel, S.; Ponnusamy, S.; Mohan, L.; Radhika, R.; Muthamizhchelvan, C.; Ramasubramanian, K.

    2018-03-01

    Biomedical implants in the knee and hip are frequent failures because of corrosion and stress on the joints. To solve this important problem, metal implants can be coated with diamond carbon, and this coating plays a critical role in providing an increased resistance to implants toward corrosion. In this study, we have employed diamond carbon coating over Ti-6Al-4V and Ti-13Nb-13Zr alloys using hot filament chemical vapor deposition method which is well-established coating process that significantly improves the resistance toward corrosion, wears and hardness. The diamond carbon-coated Ti-13Nb-13Zr alloy showed an increased microhardness in the range of 850 HV. Electrochemical impedance spectroscopy and polarization studies in SBF solution (simulated body fluid solution) were carried out to understand the in vitro behavior of uncoated as well as coated titanium alloys. The experimental results showed that the corrosion resistance of Ti-13Nb-13Zr alloy is relatively higher when compared with diamond carbon-coated Ti-6Al-4V alloys due to the presence of β phase in the Ti-13Nb-13Zr alloy. Electrochemical impedance results showed that the diamond carbon-coated alloys behave as an ideal capacitor in the body fluid solution. Moreover, the stability in mechanical properties during the corrosion process was maintained for diamond carbon-coated titanium alloys.

  16. Structure and properties of diamond and diamond-like films

    Energy Technology Data Exchange (ETDEWEB)

    Clausing, R.E. [Oak Ridge National Lab., TN (United States)

    1993-01-01

    This section is broken into four parts: (1) introduction, (2) natural IIa diamond, (3) importance of structure and composition, and (4) control of structure and properties. Conclusions of this discussion are that properties of chemical vapor deposited diamond films can compare favorably with natural diamond, that properties are anisotropic and are a strong function of structure and crystal perfection, that crystal perfection and morphology are functions of growth conditions and can be controlled, and that the manipulation of texture and thereby surface morphology and internal crystal perfection is an important step in optimizing chemically deposited diamond films for applications.

  17. Ion and electron beam studies and applications of natural and synthetic diamonds

    International Nuclear Information System (INIS)

    Sellschop, J.P.F.; Connell, S.H.; Sideras-Haddad, E.; Stemmet, M.C.; Naidoo, S.; Bharuth-Ram, K.; Haricharun, H.

    1992-01-01

    'Nuclear' probes are shown to be powerful diagnostic analytical tools for the interrogation of diamond, whether natural or synthetic. The full sweep of such probes ranges from electrons to heavy ions, and spans energies over the keV to GeV range. Neutrons are singularly appropriate for the bulk trace element analysis of diamond, while charged particle (activation) analysis is appropriate for lighter element determination, and for surface and depth profiling specification. Energetic ions are effectively deployed for the study of the amorpisation and extrusion of diamond, and for ion implantation with the view to the production of devices in diamond. Resonant nuclear reactions are used effectively in establishing the 'macroscopic' distribution of dopants, while the used of pulsed ion beams in time dependent perturbed angular distribution studies gives information on 'microscopic' lattice location of impurities. Ion channeling in diamond sets near-theoretical parameterization of Lindhard channeling theory. Electron and positron channeling is interesting in its own right, and in the former case is shown to give rise to channeling radiation for few-MeV electron energies. At GeV electron energies, channeling is important as a powerful, polarized monochromatic photon source. Muons are an elegant tool in diamond studies, and the formation of muonium permits of (radiation damage-free) hydrogen-equivalent studies. Two relatively unused nuclear techniques, Moessbauer spectroscopy and Positron Annihilation, are shown to give unique information on diamond. Finally the use of diamond as a detector of radiation is indicated. (author)

  18. Ultra-nanocrystalline diamond electrodes: optimization towards neural stimulation applications.

    Science.gov (United States)

    Garrett, David J; Ganesan, Kumaravelu; Stacey, Alastair; Fox, Kate; Meffin, Hamish; Prawer, Steven

    2012-02-01

    Diamond is well known to possess many favourable qualities for implantation into living tissue including biocompatibility, biostability, and for some applications hardness. However, conducting diamond has not, to date, been exploited in neural stimulation electrodes due to very low electrochemical double layer capacitance values that have been previously reported. Here we present electrochemical characterization of ultra-nanocrystalline diamond electrodes grown in the presence of nitrogen (N-UNCD) that exhibit charge injection capacity values as high as 163 µC cm(-2) indicating that N-UNCD is a viable material for microelectrode fabrication. Furthermore, we show that the maximum charge injection of N-UNCD can be increased by tailoring growth conditions and by subsequent electrochemical activation. For applications requiring yet higher charge injection, we show that N-UNCD electrodes can be readily metalized with platinum or iridium, further increasing charge injection capacity. Using such materials an implantable neural stimulation device fabricated from a single piece of bio-permanent material becomes feasible. This has significant advantages in terms of the physical stability and hermeticity of a long-term bionic implant.

  19. Genetics Home Reference: Diamond-Blackfan anemia

    Science.gov (United States)

    ... Home Health Conditions Diamond-Blackfan anemia Diamond-Blackfan anemia Printable PDF Open All Close All Enable Javascript ... view the expand/collapse boxes. Description Diamond-Blackfan anemia is a disorder of the bone marrow . The ...

  20. 0,01-5 MeV heavy ion accelerators

    International Nuclear Information System (INIS)

    Golubev, V.P.; Ivanov, A.S.; Nikiforov, S.A.; Svin'in, M.P.; Tarvid, G.V.; Troshikhin, A.G.; Fedotov, M.T.

    1983-01-01

    The results of development of an accelerating complex on the base of the UP-2-1 heavy ion charge exchange accelerator and IMPLANT-500 high-voltage heavy ion accelerator are given. The accelerating complex provides overlapping of the 0.01 MeV to 5 MeV energy range at accelerated beam currents of 10 -3 -10 -6 A order. The structural features of accelerators and their basic units and systems are considered. The UP-2-1 accelerator is designed for researches in the field of experimental physics and applied problem solutions. The IMPLANT-500 accelerator is designed for commercial ion-beam facilities with closed loop of silicon plate treatment

  1. Diamond turning of glass

    Energy Technology Data Exchange (ETDEWEB)

    Blackley, W.S.; Scattergood, R.O.

    1988-12-01

    A new research initiative will be undertaken to investigate the critical cutting depth concepts for single point diamond turning of brittle, amorphous materials. Inorganic glasses and a brittle, thermoset polymer (organic glass) are the principal candidate materials. Interrupted cutting tests similar to those done in earlier research are Ge and Si crystals will be made to obtain critical depth values as a function of machining parameters. The results will provide systematic data with which to assess machining performance on glasses and amorphous materials

  2. The Pre-Injector Linac for the Diamond Light Source

    CERN Document Server

    Christou, C

    2004-01-01

    The Diamond Light Source is a new medium-energy high brightness synchrotron light facility which is under construction on the Rutherford Appleton Laboratory site in the U.K. The accelerator facility can be divided into three major components; a 3 GeV 561 m circumference storage ring, a full-energy booster synchrotron and a 100 MeV pre-injector linac. This paper describes the linac design and plans for operation. The linac is supplied by ACCEL Instruments GmbH under a turn-key contract, with Diamond Light Source Ltd. providing linac beam diagnostics, control system hardware and standard vacuum components. Commissioning of the linac will take place in early 2005 and user operation of the facility will commence in 2007.

  3. Thermoluminescence characterisation of chemical vapour deposited diamond films

    CERN Document Server

    Mazzocchi, S; Bucciolini, M; Cuttone, G; Pini, S; Sabini, M G; Sciortino, S

    2002-01-01

    The thermoluminescence (TL) characteristics of a set of six chemical vapour deposited diamond films have been studied with regard to their use as off-line dosimeters in radiotherapy. The structural characterisation has been performed by means of Raman spectroscopy. Their TL responses have been tested with radiotherapy beams ( sup 6 sup 0 Co photons, photons and electrons from a linear accelerator (Linac), 26 MeV protons from a TANDEM accelerator) in the dose range 0.1-7 Gy. The dosimetric characterisation has yielded a very good reproducibility, a very low dependence of the TL response on the type of particle and independence of the radiation energy. The TL signal is not influenced by the dose rate and exhibits a very low thermal fading. Moreover, the sensitivity of the diamond samples compares favourably with that of standard TLD100 dosimeters.

  4. Pulse height distribution and radiation tolerance of CVD diamond detectors

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dangelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F. E-mail: f.hartjes@nikhef.nl; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; D.Tromson,; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Zoeller, M.; Fenyvesi, A.; Molnar, J.; Sohler, D

    2000-06-01

    The paper reviews measurements of the radiation tolerance of CVD diamond for irradiation with 24 GeV/c protons, 300 MeV/c pions and 1 MeV neutrons. For proton and neutron irradiation, the measured charge signal spectrum is compared with the spectrum calculated by a model. Irradiation by particles causes radiation damage leading to a decrease of the charge signal. However, both the measurements and the outcome from the model shows that for tracker applications this drawback is at least partly counterbalanced by a narrowing of the distribution curve of the charge signal. In addition, we observed after proton irradiation at the charge signal spectrum a decrease of the number of small signals. As a result, the efficiency of a CVD diamond tracker is less affected by irradiation than the mean charge signal.

  5. Pulse height distribution and radiation tolerance of CVD diamond detectors

    CERN Document Server

    Adam, W; Bergonzo, P; Bertuccio, G; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredotti, C; Meier, D; Mishina, M; Moroni, L; Oh, A; Pan, L S; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Procario, M; Riester, J L; Roe, S; Rousseau, L; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S R; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trawick, M L; Trischuk, W; Tromson, D; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; White, C; Zeuner, W; Zöller, M; Fenyvesi, A; Molnár, J; Sohler, D

    2000-01-01

    The paper reviews measurements of the radiation tolerance of CVD diamond for irradiation with 24 GeV/c protons, 300 MeV/c pions and 1 MeV neutrons. For proton and neutron irradiation, the measured charge signal spectrum is compared with the spectrum calculated by a model. Irradiation by particles causes radiation damage leading to a decrease of the charge signal. However, both the measurements and the outcome from the model shows that for tracker applications this drawback is at least partly counterbalanced by a narrowing of the distribution curve of the charge signal. In addition, we observed after proton irradiation at the charge signal spectrum a decrease of the number of small signals. As a result, the efficiency of a CVD diamond tracker is less affected by irradiation than the mean charge signal. (11 refs).

  6. Pulse height distribution and radiation tolerance of CVD diamond detectors

    International Nuclear Information System (INIS)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dangelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; D.Tromson,; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Zoeller, M.; Fenyvesi, A.; Molnar, J.; Sohler, D.

    2000-01-01

    The paper reviews measurements of the radiation tolerance of CVD diamond for irradiation with 24 GeV/c protons, 300 MeV/c pions and 1 MeV neutrons. For proton and neutron irradiation, the measured charge signal spectrum is compared with the spectrum calculated by a model. Irradiation by particles causes radiation damage leading to a decrease of the charge signal. However, both the measurements and the outcome from the model shows that for tracker applications this drawback is at least partly counterbalanced by a narrowing of the distribution curve of the charge signal. In addition, we observed after proton irradiation at the charge signal spectrum a decrease of the number of small signals. As a result, the efficiency of a CVD diamond tracker is less affected by irradiation than the mean charge signal

  7. Diamond Pixel Detectors and 3D Diamond Devices

    International Nuclear Information System (INIS)

    Venturi, N.

    2016-01-01

    Results from detectors of poly-crystalline chemical vapour deposited (pCVD) diamond are presented. These include the first analysis of data of the ATLAS Diamond Beam Monitor (DBM). The DBM module consists of pCVD diamond sensors instrumented with pixellated FE-I4 front-end electronics. Six diamond telescopes, each with three modules, are placed symmetrically around the ATLAS interaction point. The DBM tracking capabilities allow it to discriminate between particles coming from the interaction point and background particles passing through the ATLAS detector. Also, analysis of test beam data of pCVD DBM modules are presented. A new low threshold tuning algorithm based on noise occupancy was developed which increases the DBM module signal to noise ratio significantly. Finally first results from prototypes of a novel detector using pCVD diamond and resistive electrodes in the bulk, forming a 3D diamond device, are discussed. 3D devices based on pCVD diamond were successfully tested with test beams at CERN. The measured charge is compared to that of a strip detector mounted on the same pCVD diamond showing that the 3D device collects significantly more charge than the planar device.

  8. Surface temperature measurements of diamond

    CSIR Research Space (South Africa)

    Masina, BN

    2006-07-01

    Full Text Available Diamond has the highest thermal conductivity among known materials, and as such finds uses as an industrial tool in areas where dissipation of excess heat is a requirement. In this investigation we set up a laser system to heat a diamond sample...

  9. Creation of nitrogen-vacancy centres in diamond with high resolution

    Energy Technology Data Exchange (ETDEWEB)

    Pezzagna, Sebastien; Meijer, Jan [Rubion, Ruhr-Universitaet Bochum (Germany); Wildanger, Dominik; Hell, Stefan W. [Department of NanoBiophotonics, Max Planck Institute for Biophysical Chemistry, Goettingen (Germany); Mazarov, Paul; Wieck, Andreas D. [Lehrstuhl fuer Angewandte Festkoerperphysik, Ruhr-Universitaet Bochum (Germany); Naydenov, Boris; Jelezko, Fedor; Wrachtrup, Joerg [3. Institute of Physics, University of Stuttgart (Germany)

    2010-07-01

    Nowadays, diamond and the nitrogen-vacancy (NV) colour centres constitute the best solid-state system in view of quantum-computing applications. It has also been shown recently that single NV centres could be used as nanoscale magnetic sensors. Such applications require the creation of single NV centres with very high resolution and with a high efficiency. The nano-implanter at the university of Bochum provides low energy nitrogen ions which can be implanted through a hole pierced in the tip of an atomic force microscope. Ultrapure diamond samples have been implanted with spot sizes of 50nm and less. Stimulated Emission Depletion (STED) microscopy has been used to characterise and resolve the implanted spots.

  10. Electrochemical applications of CVD diamond

    International Nuclear Information System (INIS)

    Pastor-Moreno, Gustavo

    2002-01-01

    Diamond technology has claimed an important role in industry since non-expensive methods of synthesis such as chemical vapour deposition allow to elaborate cheap polycrystalline diamond. This fact has increased the interest in the scientific community due to the outstanding properties of diamond. Since Pleskov published in 1987 the first paper in electrochemistry, many researchers around the world have studied different aspects of diamond electrochemistry such as reactivity, electrical structure, etc. As part of this worldwide interest these studies reveal new information about diamond electrodes. These studies report investigation of diamond electrodes characterized using structural techniques like scanning electrode microscopy and Raman spectroscopy. A new electrochemical theory based on surface states is presented that explains the metal and the semiconductor behaviour in terms of the doping level of the diamond electrode. In an effort to characterise the properties of diamond electrodes the band edges for hydrogen and oxygen terminated surface are located in organic solvent, hence avoiding possible interference that are present in aqueous solution. The determination of the band edges is performed by Mott-Schottky studies. These allow the calculation of the flat band potential and therefore the band edges. Additional cyclic voltammetric studies are presented for both types of surface termination. Mott-Schottky data and cyclic voltammograms are compared and explained in terms of the band edge localisation. Non-degenerately p-type semiconductor behaviour is presented for hydrogen terminated boron doped diamond. Graphitic surface states on oxidised surface boron doped diamond are responsible for the electrochemistry of redox couples that posses similar energy. Using the simple redox couple 1,4-benzoquinone effect of surface termination on the chemical behaviour of diamond is presented. Hydrogen sublayers in diamond electrodes seem to play an important role for the

  11. Overview of Accelerator Physics Studies and High Level Software for the Diamond Light Source

    CERN Document Server

    Bartolini, Riccardo; Belgroune, Mahdia; Christou, Chris; Holder, David J; Jones, James; Kempson, Vince; Martin, Ian; Rowland, James H; Singh, Beni; Smith, Susan L; Varley, Jennifer Anne; Wyles, Naomi

    2005-01-01

    DIAMOND is a 3 GeV synchrotron light source under construction at Rutherford Appleton Laboratory in Oxfordshire (UK). The accelerators complex consists of a 100 MeV LINAC, a full energy booster and a 3GeV storage ring with 22 straight sections available for IDs. Installation of all three accelerators has begun, and LINAC commissioning is due to start in Spring 2005. This paper will give an overview of the accelerator physics activity to produce final layouts and prepare for the commissioning of the accelerator complex. The DIAMOND facility is expected to be operational for users in 2007

  12. Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond

    Directory of Open Access Journals (Sweden)

    K. Ishizaka, R. Eguchi, S. Tsuda, T. Kiss, T. Shimojima, T. Yokoya, S. Shin, T. Togashi, S. Watanabe, C.-T. Chen, C.Q. Zhang, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi and H. Kawarada

    2006-01-01

    Full Text Available We have investigated the low-energy electronic state of boron-doped diamond thin film by the laser-excited photoemission spectroscopy. A clear Fermi-edge is observed for samples doped above the semiconductor–metal boundary, together with the characteristic structures at 150×n meV possibly due to the strong electron–lattice coupling effect. In addition, for the superconducting sample, we observed a shift of the leading edge below Tc indicative of a superconducting gap opening. We discuss the electron–lattice coupling and the superconductivity in doped diamond.

  13. Defect production in natural diamond irradiated with high energy Ni ions

    International Nuclear Information System (INIS)

    Varichenko, V.S.; Martinovich, V.A.; Penina, N.M.; Zajtsev, A.M.; Stel'makh, V.F.; Didyk, A.Yu.; Fahrner, W.R.

    1995-01-01

    Defect production in diamond irradiated by 335 MeV Ni ions within a dose range of 5 · 10 12 - 5 · 10 14 cm -2 has been studied by electron paramagnetic resonance (EPR) method. The irradiation leads to the appearance in diamond lattice of quasi-one-dimensional track like structures with non tetrahedral atomic configurations. Possible mechanism of microwave conductivity in the modified structures is discussed. Peculiarities of depth distribution profile of concentration of paramagnetic centres in modified structures are explained by track channeling and by stopped ions because of their elastic collisions with lattice atoms during ion stopping. (author). 24 refs., 4 figs., 1 tab

  14. Diamond lattice Heisenberg antiferromagnet

    Science.gov (United States)

    Oitmaa, J.

    2018-04-01

    We investigate ground-state and high-temperature properties of the nearest-neighbour Heisenberg antiferromagnet on the three-dimensional diamond lattice, using series expansion methods. The ground-state energy and magnetization, as well as the magnon spectrum, are calculated and found to be in good agreement with first-order spin-wave theory, with a quantum renormalization factor of about 1.13. High-temperature series are derived for the free energy, and physical and staggered susceptibilities for spin S  =  1/2, 1 and 3/2, and analysed to obtain the corresponding Curie and Néel temperatures.

  15. Presolar Diamond in Meteorites

    OpenAIRE

    Amari, Sachiko

    2009-01-01

    Presolar diamond, the carrier of the isotopically anomalous Xe component Xe-HL, was the first mineral type of presolar dust that was isolated from meteorites. The excesses in the light, p-process only isotopes 124Xe and 126Xe, and in the heavy, r-process only isotopes 134Xe and 136Xe relative to the solar ratios indicate that Xe-HL was produced in supernovae: they are the only stellar source where these two processes are believed to take place. Although these processes occur in supernovae, th...

  16. Ion implantation

    International Nuclear Information System (INIS)

    Dearnaley, Geoffrey

    1975-01-01

    First, ion implantation in semiconductors is discussed: ion penetration, annealing of damage, gettering, ion implanted semiconductor devices, equipement requirements for ion implantation. The importance of channeling for ion implantation is studied. Then, some applications of ion implantation in metals are presented: study of the corrosion of metals and alloys; influence or ion implantation on the surface-friction and wear properties of metals; hyperfine interactions in implanted metals

  17. Microfabrication, characterization and in vivo MRI compatibility of diamond microelectrodes array for neural interfacing

    Energy Technology Data Exchange (ETDEWEB)

    Hébert, Clément, E-mail: clement.hebert@cea.fr [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France); Warnking, Jan; Depaulis, Antoine [INSERM, U836, Grenoble Institut des Neurosciences, Grenoble (France); Garçon, Laurie Amandine [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France); CEA/INAC/SPrAM/CREAB, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Mermoux, Michel [Université Grenoble Alpes, LEPMI, F-38000 Grenoble (France); CNRS, LEPMI, F-38000 Grenoble (France); Eon, David [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France); Mailley, Pascal [CEA-LETI-DTBS Minatec, 17 rue des Martyres, 38054 Grenoble (France); Omnès, Franck [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France)

    2015-01-01

    Neural interfacing still requires highly stable and biocompatible materials, in particular for in vivo applications. Indeed, most of the currently used materials are degraded and/or encapsulated by the proximal tissue leading to a loss of efficiency. Here, we considered boron doped diamond microelectrodes to address this issue and we evaluated the performances of a diamond microelectrode array. We described the microfabrication process of the device and discuss its functionalities. We characterized its electrochemical performances by cyclic voltammetry and impedance spectroscopy in saline buffer and observed the typical diamond electrode electrochemical properties, wide potential window and low background current, allowing efficient electrochemical detection. The charge storage capacitance and the modulus of the electrochemical impedance were found to remain in the same range as platinum electrodes used for standard commercial devices. Finally we observed a reduced Magnetic Resonance Imaging artifact when the device was implanted on a rat cortex, suggesting that boron doped-diamond is a very promising electrode material allowing functional imaging. - Highlights: • Microfabrication of all-diamond microelectrode array • Evaluation of as-grown nanocrystalline boron-doped diamond for electrical neural interfacing • MRI compatibility of nanocrystalline boron-doped diamond.

  18. An evaluation of electron diamond type EDO2E and EDO3 diamond radiation detectors

    International Nuclear Information System (INIS)

    Poole, D.A.; Wilson, R.

    1977-12-01

    Observations on the response of two d.c. mode (EDO2E) and three pulse mode (EDO3) diamond probes to beta and gamma radiation are reported. In the d.c. mode, response to gamma exposure rates from 1 R h -1 to >6x10 4 R h -1 were measured, currents of approximately 5x10 -13 A and approximately 3x10 -9 A respectively at 20 0 C being observed. The dark current was approximately 3x10 -13 A at 20 0 C and doubled for every 3 to 4 0 C temperature rise. In the pulse mode the count rate was approximately linear with gamma exposure rate from 10 mR h -1 to > 300 R h -1 . The detection of beta particles was limited to energies > or approximately equal 0.8 MeV. Over the temperature range -5 0 C to 50 0 C the count rate for one probe increased by a factor of 1.25 whereas a second probe showed a decrease of 1.4. There is scope for major improvement of diamond detectors as reported by Kozlov et al (1977a) who have eliminated certain undesirable effects by careful selection and the provision of special electrodes. (author)

  19. Transmission diamond imaging detector

    Energy Technology Data Exchange (ETDEWEB)

    Smedley, John, E-mail: smedley@bnl.gov; Pinelli, Don; Gaoweia, Mengjia [Brookhaven National Laboratory, Upton, NY (United States); Muller, Erik; Ding, Wenxiang; Zhou, Tianyi [Stony Brook University, Stony Brook, NY (United States); Bohon, Jen [Case Center for Synchrotron Biosciences, Center for Proteomics and Bioinformatics, Case Western Reserve University, Cleveland, OH (United States)

    2016-07-27

    Many modern synchrotron techniques are trending toward use of high flux beams and/or beams which require enhanced stability and precise understanding of beam position and intensity from the front end of the beamline all the way to the sample. For high flux beams, major challenges include heat load management in optics (including the vacuum windows) and a mechanism of real-time volumetric measurement of beam properties such as flux, position, and morphology. For beam stability in these environments, feedback from such measurements directly to control systems for optical elements or to sample positioning stages would be invaluable. To address these challenges, we are developing diamond-based instrumented vacuum windows with integrated volumetric x-ray intensity, beam profile and beam-position monitoring capabilities. A 50 µm thick single crystal diamond has been lithographically patterned to produce 60 µm pixels, creating a >1kilopixel free-standing transmission imaging detector. This device, coupled with a custom, FPGA-based readout, has been used to image both white and monochromatic x-ray beams and capture the last x-ray photons at the National Synchrotron Light Source (NSLS). This technology will form the basis for the instrumented end-station window of the x-ray footprinting beamline (XFP) at NSLS-II.

  20. Diamonds in the Sky

    Science.gov (United States)

    Brotherton, M.

    2004-12-01

    My first science fiction novel, Star Dragon, just recently available in paperback from Tor, features a voyage to the cataclysmic variable star system SS Cygni. My second novel, Spider Star, to appear early in 2006, takes place in and around a dark matter ``planet'' orbiting a neutron star. Both novels are ``hard'' science fiction, relying on accurate physics to inform the tales. It's possible to bring to life abstract concepts like special relativity, and alien environments like accretion disks, by using science fiction. Novels are difficult to use in a science class, but short stories offer intriguing possibilities. I'm planning to edit an anthology of hard science fiction stories that contain accurate science and emphasize fundamental ideas in modern astronomy. The working title is Diamonds in the Sky. The collection will be a mix of original stories and reprints, highlighting challenging concepts covered in a typical introductory astronomy course. Larry Niven's classic story, ``Neutron Star," is an excellent demonstration of extreme tidal forces in an astronomical context. Diamonds in the Sky will include forewards and afterwards to the stories, including discussion questions and mathematical formulas/examples as appropriate. I envision this project will be published electronically or through a print-on-demand publisher, providing long-term availabilty and keeping low cost. I encourage interested parties to suggest previously published stories, or to suggest which topics must be included.

  1. Thermal applications of low-pressure diamond

    International Nuclear Information System (INIS)

    Haubner, R.; Lux, B.

    1997-01-01

    During the last decade several applications of low-pressure diamond were developed. Main products are diamond heat-spreaders using its high thermal conductivity, diamond windows with their high transparency over a wide range of wavelengths and wear resistant tool coatings because of diamonds superhardness. A short description of the most efficient diamond deposition methods (microwave, DC-glow discharge, plasma-jet and arc discharge) is given. The production and applications of diamond layers with high thermal conductivity will be described. Problems of reproducibility of diamond deposition, the influence of impurities, the heat conductivity in electronic packages, reliability and economical mass production will be discussed. (author)

  2. Investigation of the physics of diamond MEMS : diamond allotrope lithography

    International Nuclear Information System (INIS)

    Zalizniak, I.; Olivero, P.; Jamieson, D.N.; Prawer, S.; Reichart, P.; Rubanov, S.; Petriconi, S.

    2005-01-01

    We propose a novel lithography process in which ion induced phase transfomations of diamond form sacrificial layers allowing the fabrication of small structures including micro-electromechanical systems (MEMS). We have applied this novel lithography to the fabrication of diamond microcavities, cantilevers and optical waveguides. In this paper we present preliminary experiments directed at the fabrication of suspended diamond disks that have the potential for operation as optical resonators. Such structures would be very durable and resistant to chemical attack with potential applications as novel sensors for extreme environments or high temperature radiation detectors. (author). 3 refs., 3 figs

  3. Bacterial Adhesion to Diamond-like Carbon as Compared to Stainless Steel

    NARCIS (Netherlands)

    Soininen, Antti; Tiainen, Veli-Matti; Konttinen, Yrjo T.; van der Mei, Henny C.; Busscher, Henk J.; Sharma, Prashant K.

    Recent studies suggest that diamond-like carbon (DLC) coatings are suitable candidates for application on biomedical devices and implants, due to their high hardness, low friction, high wear and corrosion resistance, chemical inertness, smoothness, and tissue and blood compatibility. However, most

  4. Proton Irradiation of CVD Diamond Detectors for High Luminosity Experiments at the LHC

    CERN Document Server

    Meier, D; Bauer, C; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E A; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Jany, C; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Knöpfle, K T; Krammer, Manfred; Manfredi, P F; Marshall, R D; Mishina, M; Le Normand, F; Pan, L S; Palmieri, V G; Pernegger, H; Pernicka, Manfred; Peitz, A; Pirollo, S; Pretzl, Klaus P; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Turchetta, R; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zöller, M

    1999-01-01

    CVD diamond shows promising properties for use as a position sensitive detector for experiments in the highest radiation areas at the Large Hadron Collider. In order to study the radiation hardn ess of diamond we exposed CVD diamond detector samples to 24~GeV/$c$ and 500~MeV protons up to a fluence of $5\\times 10^{15}~p/{\\rm cm^2}$. We measured the charge collection distance, the ave rage distance electron hole pairs move apart in an external electric field, and leakage currents before, during, and after irradiation. The charge collection distance remains unchanged up to $1\\ times 10^{15}~p/{\\rm cm^2}$ and decreases by $\\approx$40~\\% at $5\\times 10^{15}~p/{\\rm cm^2}$. Leakage currents of diamond samples were below 1~pA before and after irradiation. The particle indu ced currents during irradiation correlate well with the proton flux. In contrast to diamond, a silicon diode, which was irradiated for comparison, shows the known large increase in leakage curren t. We conclude that CVD diamond detectors are radia...

  5. Diamond: a material for acoustic devices

    OpenAIRE

    MORTET, Vincent; WILLIAMS, Oliver; HAENEN, Ken

    2008-01-01

    Diamond has been foreseen to replace silicon for high power, high frequency electronic applications or for devices that operates in harsh environments. However, diamond electronic devices are still in the laboratory stage due to the lack of large substrates and the complexity of diamond doping. On another hand, surface acoustic wave filters based on diamond are commercially available. Diamond is especially suited for acoustic applications because of its exceptional mechanical properties. The ...

  6. CVD diamond metallization and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Fraimovitch, D., E-mail: dimitryf@mail.tau.ac.il [Faculty of Engineering, Tel Aviv University, 69978 Tel Aviv (Israel); Adelberd, A.; Marunko, S. [Faculty of Engineering, Tel Aviv University, 69978 Tel Aviv (Israel); Lefeuvre, G. [Micron Semiconductor Ltd. Royal Buildings, Marlborough Road, Lancing Business Park, BN15 8SJ (United Kingdom); Ruzin, A. [Faculty of Engineering, Tel Aviv University, 69978 Tel Aviv (Israel)

    2017-02-11

    In this study we compared three diamond substrate grades: polycrystalline, optical grade single crystal, and electronic grade single crystal for detector application. Beside the bulk type, the choice of contact material, pre-treatment, and sputtering process details have shown to alter significantly the diamond detector performance. Characterization of diamond substrate permittivity and losses indicate grade and crystallinity related, characteristic differences for frequencies in 1 kHz–1 MHz range. Substantial grade related variations were also observed in surface electrostatic characterization performed by contact potential difference (CPD) mode of an atomic force microscope. Study of conductivity variations with temperature reveal that bulk trap energy levels are also dependent on the crystal grade.

  7. CVD diamond metallization and characterization

    International Nuclear Information System (INIS)

    Fraimovitch, D.; Adelberd, A.; Marunko, S.; Lefeuvre, G.; Ruzin, A.

    2017-01-01

    In this study we compared three diamond substrate grades: polycrystalline, optical grade single crystal, and electronic grade single crystal for detector application. Beside the bulk type, the choice of contact material, pre-treatment, and sputtering process details have shown to alter significantly the diamond detector performance. Characterization of diamond substrate permittivity and losses indicate grade and crystallinity related, characteristic differences for frequencies in 1 kHz–1 MHz range. Substantial grade related variations were also observed in surface electrostatic characterization performed by contact potential difference (CPD) mode of an atomic force microscope. Study of conductivity variations with temperature reveal that bulk trap energy levels are also dependent on the crystal grade.

  8. Diamond and Diamond-Like Materials as Hydrogen Isotope Barriers

    International Nuclear Information System (INIS)

    Foreman, L.R.; Barbero, R.S.; Carroll, D.W.; Archuleta, T.; Baker, J.; Devlin, D.; Duke, J.; Loemier, D.; Trukla, M.

    1999-01-01

    This is the final report of a two-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). The purpose of this project was to develop diamond and diamond-like thin-films as hydrogen isotope permeation barriers. Hydrogen embrittlement limits the life of boost systems which otherwise might be increased to 25 years with a successful non-reactive barrier. Applications in tritium processing such as bottle filling processes, tritium recovery processes, and target filling processes could benefit from an effective barrier. Diamond-like films used for low permeability shells for ICF and HEDP targets were also investigated. Unacceptable high permeabilities for hydrogen were obtained for plasma-CVD diamond-like-carbon films

  9. Multi-dimensional microanalysis of masklessly implanted atoms using focused heavy ion beam

    International Nuclear Information System (INIS)

    Mokuno, Yoshiaki; Iiorino, Yuji; Chayahara, Akiyoshi; Kiuchi, Masato; Fujii, Kanenaga; Satou, Mamoru

    1992-01-01

    Multi-dimensional structure fabricated by maskless MeV gold implantation in silicon wafer was analyzed by 3 MeV carbon ion microprobe using a microbeam line developed at GIRIO. The minimum line width of the implanted region was estimated to be about 5 μm. The advantages of heavy ions for microanalysis were demonstrated. (author)

  10. Elastic nano-structure of diamond-like carbon (DLC)

    International Nuclear Information System (INIS)

    Ogiso, Hisato; Yoshida, Mikiko; Nakano, Shizuka; Yasui, Haruyuki; Awazu, Kaoru

    2006-01-01

    This research discusses the elastic nano-structure of diamond-like carbon (DLC) films. Two DLC film samples deposited by plasma based ion implantation (PBII) were prepared. The plasma generated by microwave (MW) was applied to one sample and the plasma by radio frequency (RF) to the other sample. The samples were evaluated for the elastic property image with nanometer resolution using scanning probe microscopy (SPM). The film surface deposited by RF-PBII was very flat and homogeneous in elastic property. In contrast, the film surface by MW-PBII was more uneven than that by RF-PBII and both the locally hard and the locally soft regions were found at the film surface. The size of the structure in elastic property is several tens nanometer. We conclude that the film probably contains nano-scale diamond phase

  11. Elastic nano-structure of diamond-like carbon (DLC)

    Energy Technology Data Exchange (ETDEWEB)

    Ogiso, Hisato [National Institute of Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564 (Japan); Yoshida, Mikiko [National Institute of Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564 (Japan); Nakano, Shizuka [National Institute of Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564 (Japan); Yasui, Haruyuki [Industrial Research Institute of Ishikawa (IRII), Ro-1, Tomizu-machi, Kanazawa, Ishikawa 920-0233 (Japan); Awazu, Kaoru [Industrial Research Institute of Ishikawa (IRII), Ro-1, Tomizu-machi, Kanazawa, Ishikawa 920-0233 (Japan)

    2006-01-15

    This research discusses the elastic nano-structure of diamond-like carbon (DLC) films. Two DLC film samples deposited by plasma based ion implantation (PBII) were prepared. The plasma generated by microwave (MW) was applied to one sample and the plasma by radio frequency (RF) to the other sample. The samples were evaluated for the elastic property image with nanometer resolution using scanning probe microscopy (SPM). The film surface deposited by RF-PBII was very flat and homogeneous in elastic property. In contrast, the film surface by MW-PBII was more uneven than that by RF-PBII and both the locally hard and the locally soft regions were found at the film surface. The size of the structure in elastic property is several tens nanometer. We conclude that the film probably contains nano-scale diamond phase.

  12. Method of dehalogenation using diamonds

    Science.gov (United States)

    Farcasiu, Malvina; Kaufman, Phillip B.; Ladner, Edward P.; Anderson, Richard R.

    2000-01-01

    A method for preparing olefins and halogenated olefins is provided comprising contacting halogenated compounds with diamonds for a sufficient time and at a sufficient temperature to convert the halogenated compounds to olefins and halogenated olefins via elimination reactions.

  13. Quantum photonic networks in diamond

    KAUST Repository

    Lončar, Marko; Faraon, Andrei

    2013-01-01

    Advances in nanotechnology have enabled the opportunity to fabricate nanoscale optical devices and chip-scale systems in diamond that can generate, manipulate, and store optical signals at the single-photon level. In particular, nanophotonics has

  14. CVD diamond detectors and dosimeters

    International Nuclear Information System (INIS)

    Manfredotti, C.; Fizzotti, F.; LoGiudice, A.; Paolini, C.; Oliviero, P.; Vittone, E.; Torino Univ., Torino

    2002-01-01

    Natural diamond, because of its well-known properties of tissue-equivalence, has recorded a wide spreading use in radiotherapy planning with electron linear accelerators. Artificial diamond dosimeters, as obtained by Chemical Vapour Deposition (CVD) could be capable to offer the same performances and they can be prepared in different volumes and shapes. The dosimeter sensitivity per unit volume may be easily proved to be better than standard ionization microchamber. We have prepared in our laboratory CVD diamond microchamber (diamond tips) in emispherical shape with an external diameter of 200 μm, which can be used both as X-ray beam profilometers and as microdosimeters for small field applications like stereotaxy and also for in vivo applications. These dosimeters, which are obtained on a wire substrate that could be either metallic or SiC or even graphite, display good performances also as ion or synchrotron X-rays detectors

  15. DIAMONDS: Engineering Distributed Object Systems

    National Research Council Canada - National Science Library

    Cheng, Evan

    1997-01-01

    This report describes DIAMONDS, a research project at Syracuse University, that is dedicated to producing both a methodology and corresponding tools to assist in the development of heterogeneous distributed software...

  16. High energy ion implantation for IC processing

    International Nuclear Information System (INIS)

    Oosterhoff, S.

    1986-01-01

    In this thesis the results of fundamental research on high energy ion implantation in silicon are presented and discussed. The implantations have been carried out with the 500 kV HVEE ion implantation machine, that was acquired in 1981 by the IC technology and Electronics group at Twente University of Technology. The damage and anneal behaviour of 1 MeV boron implantations to a dose of 10 13 /cm 2 have been investigated as a function of anneal temperature by sheet resistance, Hall and noise measurements. (Auth.)

  17. Modeling of diamond radiation detectors

    International Nuclear Information System (INIS)

    Milazzo, L.; Mainwood, A.

    2004-01-01

    We have built up a computer simulation of the detection mechanism in the diamond radiation detectors. The diamond detectors can be fabricated from a chemical vapour deposition polycrystalline diamond film. In this case, the trapping-detrapping and recombination at the defects inside the grains and at the grain boundaries degrade the transport properties of the material and the charge induction processes. These effects may strongly influence the device's response. Previous simulations of this kind of phenomena in the diamond detectors have generally been restricted to the simple detector geometries and homogeneous distribution of the defects. In our model, the diamond film (diamond detector) is simulated by a grid. We apply a spatial and time discretization, regulated by the grid resolution, to the equations describing the charge transport and, by using the Shockley-Ramo theorem, we calculate the signal induced on the electrodes. In this way, we can simulate the effects of the nonhomogeneous distributions of the trapping, recombination, or scattering centers and can investigate the differences observed when different particles, energies, and electrode configurations are used. The simulation shows that the efficiency of the detector increases linearly with the average grain size, that the charge collection distance is small compared to the dimensions of a single grain, and that for small grains, the trapping at the intragrain defects is insignificant compared to the effect of the grain boundaries

  18. Quantum photonic networks in diamond

    KAUST Repository

    Lončar, Marko

    2013-02-01

    Advances in nanotechnology have enabled the opportunity to fabricate nanoscale optical devices and chip-scale systems in diamond that can generate, manipulate, and store optical signals at the single-photon level. In particular, nanophotonics has emerged as a powerful interface between optical elements such as optical fibers and lenses, and solid-state quantum objects such as luminescent color centers in diamond that can be used effectively to manipulate quantum information. While quantum science and technology has been the main driving force behind recent interest in diamond nanophotonics, such a platform would have many applications that go well beyond the quantum realm. For example, diamond\\'s transparency over a wide wavelength range, large third-order nonlinearity, and excellent thermal properties are of great interest for the implementation of frequency combs and integrated Raman lasers. Diamond is also an inert material that makes it well suited for biological applications and for devices that must operate in harsh environments. Copyright © Materials Research Society 2013.

  19. Diamonds: Exploration, mines and marketing

    Science.gov (United States)

    Read, George H.; Janse, A. J. A. (Bram)

    2009-11-01

    The beauty, value and mystique of exceptional quality diamonds such as the 603 carat Lesotho Promise, recovered from the Letseng Mine in 2006, help to drive a multi-billion dollar diamond exploration, mining and marketing industry that operates in some 45 countries across the globe. Five countries, Botswana, Russia, Canada, South Africa and Angola account for 83% by value and 65% by weight of annual diamond production, which is mainly produced by four major companies, De Beers, Alrosa, Rio Tinto and BHP Billiton (BHPB), which together account for 78% by value and 72% by weight of annual diamond production for 2007. During the last twelve years 16 new diamond mines commenced production and 4 re-opened. In addition, 11 projects are in advanced evaluation and may begin operations within the next five years. Exploration for diamondiferous kimberlites was still energetic up to the last quarter of 2008 with most work carried out in Canada, Angola, Democratic Republic of the Congo (DRC) and Botswana. Many kimberlites were discovered but no new economic deposits were outlined as a result of this work, except for the discovery and possible development of the Bunder project by Rio Tinto in India. Exploration methods have benefitted greatly from improved techniques of high resolution geophysical aerial surveying, new research into the geochemistry of indicator minerals and further insights into the formation of diamonds and the relation to tectonic/structural events in the crust and mantle. Recent trends in diamond marketing indicate that prices for rough diamonds and polished goods were still rising up to the last quarter of 2008 and subsequently abruptly sank in line with the worldwide financial crisis. Most analysts predict that prices will rise again in the long term as the gap between supply and demand will widen because no new economic diamond discoveries have been made recently. The disparity between high rough and polished prices and low share prices of publicly

  20. Scalable Fabrication of Integrated Nanophotonic Circuits on Arrays of Thin Single Crystal Diamond Membrane Windows.

    Science.gov (United States)

    Piracha, Afaq H; Rath, Patrik; Ganesan, Kumaravelu; Kühn, Stefan; Pernice, Wolfram H P; Prawer, Steven

    2016-05-11

    Diamond has emerged as a promising platform for nanophotonic, optical, and quantum technologies. High-quality, single crystalline substrates of acceptable size are a prerequisite to meet the demanding requirements on low-level impurities and low absorption loss when targeting large photonic circuits. Here, we describe a scalable fabrication method for single crystal diamond membrane windows that achieves three major goals with one fabrication method: providing high quality diamond, as confirmed by Raman spectroscopy; achieving homogeneously thin membranes, enabled by ion implantation; and providing compatibility with established planar fabrication via lithography and vertical etching. On such suspended diamond membranes we demonstrate a suite of photonic components as building blocks for nanophotonic circuits. Monolithic grating couplers are used to efficiently couple light between photonic circuits and optical fibers. In waveguide coupled optical ring resonators, we find loaded quality factors up to 66 000 at a wavelength of 1560 nm, corresponding to propagation loss below 7.2 dB/cm. Our approach holds promise for the scalable implementation of future diamond quantum photonic technologies and all-diamond photonic metrology tools.

  1. A new route to process diamond wires

    Directory of Open Access Journals (Sweden)

    Marcello Filgueira

    2003-06-01

    Full Text Available We propose an original route to process diamond wires, denominated In Situ Technology, whose fabrication involves mechanical conformation processes, such as rotary forging, copper tubes restacking, and thermal treatments, such as sintering and recrystallisation of a bronze 4 wt.% diamond composite. Tensile tests were performed, reaching an ultimate tensile strength (UTS of 230 MPa for the diameter of Æ = 1.84 mm. Scanning electron microscopy showed the diamond crystals distribution along the composite rope during its manufacture, as well as the diamond adhesion to the bronze matrix. Cutting tests were carried out with the processed wire, showing a probable performance 4 times higher than the diamond sawing discs, however its probable performance was about 5 to 8 times less than the conventional diamond wires (pearl system due to the low abrasion resistance of the bronze matrix, and low adhesion between the pair bronze-diamond due to the use of not metallised diamond single crystals.

  2. High vacuum tribology of polycrystalline diamond coatings

    Indian Academy of Sciences (India)

    Polycrystalline diamond coatings; hot filament CVD; high vacuum tribology. 1. Introduction .... is a characteristic of graphite. We mark the (diamond ... coefficient of friction due to changes in substrate temperature. The average coefficient of.

  3. Diamond-based materials for biomedical applications

    CERN Document Server

    Narayan, Roger

    2013-01-01

    Carbon is light-weight, strong, conductive and able to mimic natural materials within the body, making it ideal for many uses within biomedicine. Consequently a great deal of research and funding is being put into this interesting material with a view to increasing the variety of medical applications for which it is suitable. Diamond-based materials for biomedical applications presents readers with the fundamental principles and novel applications of this versatile material. Part one provides a clear introduction to diamond based materials for medical applications. Functionalization of diamond particles and surfaces is discussed, followed by biotribology and biological behaviour of nanocrystalline diamond coatings, and blood compatibility of diamond-like carbon coatings. Part two then goes on to review biomedical applications of diamond based materials, beginning with nanostructured diamond coatings for orthopaedic applications. Topics explored include ultrananocrystalline diamond for neural and ophthalmologi...

  4. Silicon diodes as an alternative to diamond detectors for depth dose curves and profile measurements of photon and electron radiation.

    Science.gov (United States)

    Scherf, Christian; Peter, Christiane; Moog, Jussi; Licher, Jörg; Kara, Eugen; Zink, Klemens; Rödel, Claus; Ramm, Ulla

    2009-08-01

    Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm(3) thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm(2) because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector.

  5. Organophosphonate biofunctionalization of diamond electrodes.

    Science.gov (United States)

    Caterino, R; Csiki, R; Wiesinger, M; Sachsenhauser, M; Stutzmann, M; Garrido, J A; Cattani-Scholz, A; Speranza, Giorgio; Janssens, S D; Haenen, K

    2014-08-27

    The modification of the diamond surface with organic molecules is a crucial aspect to be considered for any bioapplication of this material. There is great interest in broadening the range of linker molecules that can be covalently bound to the diamond surface. In the case of protein immobilization, the hydropathicity of the surface has a major influence on the protein conformation and, thus, on the functionality of proteins immobilized at surfaces. For electrochemical applications, particular attention has to be devoted to avoid that the charge transfer between the electrode and the redox center embedded in the protein is hindered by a thick insulating linker layer. This paper reports on the grafting of 6-phosphonohexanoic acid on OH-terminated diamond surfaces, serving as linkers to tether electroactive proteins onto diamond surfaces. X-ray photoelectron spectroscopy (XPS) confirms the formation of a stable layer on the surface. The charge transfer between electroactive molecules and the substrate is studied by electrochemical characterization of the redox activity of aminomethylferrocene and cytochrome c covalently bound to the substrate through this linker. Our work demonstrates that OH-terminated diamond functionalized with 6-phosphonohexanoic acid is a suitable platform to interface redox-proteins, which are fundamental building blocks for many bioelectronics applications.

  6. Nanocrystalline diamond films for biomedical applications

    DEFF Research Database (Denmark)

    Pennisi, Cristian Pablo; Alcaide, Maria

    2014-01-01

    Nanocrystalline diamond films, which comprise the so called nanocrystalline diamond (NCD) and ultrananocrystalline diamond (UNCD), represent a class of biomaterials possessing outstanding mechanical, tribological, and electrical properties, which include high surface smoothness, high corrosion...... performance of nanocrystalline diamond films is reviewed from an application-specific perspective, covering topics such as enhancement of cellular adhesion, anti-fouling coatings, non-thrombogenic surfaces, micropatterning of cells and proteins, and immobilization of biomolecules for bioassays. In order...

  7. Medical applications of diamond particles & surfaces

    OpenAIRE

    Roger J Narayan; Ryan D. Boehm; Anirudha V. Sumant

    2011-01-01

    Diamond has been considered for use in several medical applications due to its unique mechanical, chemical, optical, and biological properties. In this paper, methods for preparing synthetic diamond surfaces and particles are described. In addition, recent developments involving the use of diamond in prostheses, sensing, imaging, and drug delivery applications are reviewed. These developments suggest that diamond-containing structures will provide significant improvements in the diagnosis and...

  8. Ultimate Atomic Bling: Nanotechnology of Diamonds

    International Nuclear Information System (INIS)

    Dahl, Jeremy

    2010-01-01

    Diamonds exist in all sizes, from the Hope Diamond to minuscule crystals only a few atoms across. The smallest of these diamonds are created naturally by the same processes that make petroleum. Recently, researchers discovered that these 'diamondoids' are formed in many different structural shapes, and that these shapes can be used like LEGO blocks for nanotechnology. This talk will discuss the discovery of these nano-size diamonds and highlight current SLAC/Stanford research into their applications in electronics and medicine.

  9. Diamond and diamond-like films for transportation applications

    Energy Technology Data Exchange (ETDEWEB)

    Perez, J.M.

    1993-01-01

    This section is a compilation of transparency templates which describe the goals of the Office of Transportation Materials (OTM) Tribology Program. The positions of personnel on the OTM are listed. The role and mission of the OTM is reviewed. The purpose of the Tribology Program is stated to be `to obtain industry input on program(s) in tribology/advanced lubricants areas of interest`. The objective addressed here is to identify opportunities for cost effective application of diamond and diamond-like carbon in transportation systems.

  10. Characterization of a synthetic single crystal diamond Schottky diode for radiotherapy electron beam dosimetry.

    Science.gov (United States)

    Di Venanzio, C; Marinelli, Marco; Milani, E; Prestopino, G; Verona, C; Verona-Rinati, G; Falco, M D; Bagalà, P; Santoni, R; Pimpinella, M

    2013-02-01

    To investigate the dosimetric properties of synthetic single crystal diamond based Schottky diodes under irradiation with therapeutic electron beams from linear accelerators. A single crystal diamond detector was fabricated and tested under 6, 8, 10, 12, and 15 MeV electron beams. The detector performances were evaluated using three types of commercial detectors as reference dosimeters: an Advanced Markus plane parallel ionization chamber, a Semiflex cylindrical ionization chamber, and a p-type silicon detector. Preirradiation, linearity with dose, dose rate dependence, output factors, lateral field profiles, and percentage depth dose profiles were investigated and discussed. During preirradiation the diamond detector signal shows a weak decrease within 0.7% with respect to the plateau value and a final signal stability of 0.1% (1σ) is observed after about 5 Gy. A good linear behavior of the detector response as a function of the delivered dose is observed with deviations below ±0.3% in the dose range from 0.02 to 10 Gy. In addition, the detector response is dose rate independent, with deviations below 0.3% in the investigated dose rate range from 0.17 to 5.45 Gy∕min. Percentage depth dose curves obtained from the diamond detector are in good agreement with the ones from the reference dosimeters. Lateral beam profile measurements show an overall good agreement among detectors, taking into account their respective geometrical features. The spatial resolution of solid state detectors is confirmed to be better than that of ionization chambers, being the one from the diamond detector comparable to that of the silicon diode. A good agreement within experimental uncertainties was also found in terms of output factor measurements between the diamond detector and reference dosimeters. The observed dosimetric properties indicate that the tested diamond detector is a suitable candidate for clinical electron beam dosimetry.

  11. Diamonds at the golden point

    CERN Multimedia

    Katarina Anthony

    2015-01-01

    Alongside the CMS Pixel Luminosity Telescope (PLT) – installed last month (see here) – lie diamond detectors. No ordinary gems, these lab-grown diamonds will be playing a vital role in Run 2: differentiating signals from collision products with those from the beam background.   The BCM detector's green "c-shaped" printed circuit board is mounted on the PLT/BCM carbon-fibre carriage ready for installation. Earlier this year, the CMS BRIL project installed beam condition monitors (BCM) at the heart of the CMS detector. Designed to measure the online luminosity and beam background as close as possible to the LHC beam pipe, the BCMs use radiation-hard diamonds to differentiate between background and collision signals. The BCM also protects the CMS silicon trackers from damaging beam losses, by aborting the beam if the signal currents measured are above an acceptable threshold. These new BCMs are designed with Run 2 bunches in mind. &ldq...

  12. Status of diamond particle detectors

    Science.gov (United States)

    Krammer, M.; Adam, W.; Bauer, C.; Berdermann, E.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fish, D.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knöpfle, K. T.; Manfredi, P. F.; Meier, D.; Mishina, M.; LeNormand, F.; Pan, L. S.; Pernegger, H.; Pernicka, M.; Re, V.; Riester, G. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Turchetta, R.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.

    1998-11-01

    To continue the exciting research in the field of particle physics new accelerators and experiments are under construction. In some of these experiments, e.g. ATLAS and CMS at the Large Hadron Collider at CERN or HERA-B at DESY, the detectors have to withstand an extreme environment. The detectors must be radiation hard, provide a very fast signal, and be as thin as possible. The properties of CVD diamond allow to fulfill these requirements and make it an ideal material for the detectors close to the interaction region of these experiments, i.e. the vertex detectors or the inner trackers. The RD42 collaboration is developing diamond detectors for these applications. The program of RD42 includes the improvement of the charge collection properties of CVD diamond, the study of the radiation hardness and the development of low-noise radiation hard readout electronics. An overview of the progress achieved during the last years will be given.

  13. Characterization of a microDiamond detector in high-dose-per-pulse electron beams for intra operative radiation therapy.

    Science.gov (United States)

    Di Venanzio, C; Marinelli, Marco; Tonnetti, A; Verona-Rinati, G; Falco, M D; Pimpinella, M; Ciccotelli, A; De Stefano, S; Felici, G; Marangoni, F

    2015-12-01

    To characterize a synthetic diamond dosimeter (PTW Freiburg microDiamond 60019) in high dose-per-pulse electron beams produced by an Intra Operative Radiation Therapy (IORT) dedicated accelerator. The dosimetric properties of the microDiamond were assessed under 6, 8 and 9 MeV electron beams by a NOVAC11 mobile accelerator (Sordina IORT Technologies S.p.A.). The characterization was carried out with dose-per-pulse ranging from 26 to 105 mGy per pulse. The microDiamond performance was compared with an Advanced Markus ionization chamber and a PTW silicon diode E in terms of dose linearity, percentage depth dose (PDD) curves, beam profiles and output factors. A good linearity of the microDiamond response was verified in the dose range from 0.2 Gy to 28 Gy. A sensitivity of 1.29 nC/Gy was measured under IORT electron beams, resulting within 1% with respect to the one obtained in reference condition under (60)Co gamma irradiation. PDD measurements were found in agreement with the ones by the reference dosimeters, with differences in R50 values below 0.3 mm. Profile measurements evidenced a high spatial resolution of the microDiamond, slightly worse than the one of the silicon diode. The penumbra widths measured by the microDiamond resulted approximately 0.5 mm larger than the ones by the Silicon diode. Output factors measured by the microDiamond were found within 2% with those obtained by the Advanced Markus down to 3 cm diameter field sizes. The microDiamond dosimeter was demonstrated to be suitable for precise dosimetry in IORT applications under high dose-per-pulse conditions. Copyright © 2015 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

  14. Pulsed laser deposition of metallic films on the surface of diamond particles for diamond saw blades

    International Nuclear Information System (INIS)

    Jiang Chao; Luo Fei; Long Hua; Hu Shaoliu; Li Bo; Wang Youqing

    2005-01-01

    Ti or Ni films have been deposited on the diamond particle surfaces by pulsed laser deposition. Compressive resistance of the uncoated and coated diamond particles was measured, respectively, in the experiments. The compressive resistance of the Ti-coated diamonds particles was found much higher than that of the uncoated ones. It increased by 39%. The surface morphology is observed by the metallography microscope. The surface of the uncoated diamonds particles had many hollows and flaws, while the surface of Ni-coated diamond particles was flat and smooth, and the surface of Ti-coated diamond particles had some metal masses that stood out of the surface of the Ti-coated film. The components of the metallic films of diamond particles were examined by X-ray diffractometry (XRD). TiC was found formed on the Ti-coated diamond surface, which resulted in increased surface bonding strength between the diamond particles and the Ti films. Meanwhile, TiC also favored improving the bonding strength between the coated diamond particles and the binding materials. Moreover, the bending resistance of the diamond saw blade made of Ti-coated diamond was drastically higher than that of other diamond saw blades, which also played an important role in improving the blade's cutting ability and lifetime. Therefore, it was most appropriate that the diamond saw blade was made of Ti-coated diamond particles rather than other materials

  15. Thermal diffusion boron doping of single-crystal natural diamond

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Wu, Henry; Morgan, Dane [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Blanchard, James P. [Department of Nuclear Engineering and Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhou, Weidong [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, Arlington, Texas 76019 (United States); Gong, Shaoqin [Department of Biomedical Engineering and Wisconsin Institute for Discovery, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2016-05-28

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  16. Thermal diffusion boron doping of single-crystal natural diamond

    International Nuclear Information System (INIS)

    Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang; Wu, Henry; Morgan, Dane; Blanchard, James P.; Zhou, Weidong; Gong, Shaoqin

    2016-01-01

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  17. Diamonds on Diamond: structural studies at extreme conditions on the Diamond Light Source.

    Science.gov (United States)

    McMahon, M I

    2015-03-06

    Extreme conditions (EC) research investigates how the structures and physical and chemical properties of materials change when subjected to extremes of pressure and temperature. Pressures in excess of one million times atmospheric pressure can be achieved using a diamond anvil cell, and, in combination with high-energy, micro-focused radiation from a third-generation synchrotron such as Diamond, detailed structural information can be obtained using either powder or single-crystal diffraction techniques. Here, I summarize some of the research drivers behind international EC research, and then briefly describe the techniques by which high-quality diffraction data are obtained. I then highlight the breadth of EC research possible on Diamond by summarizing four examples from work conducted on the I15 and I19 beamlines, including a study which resulted in the first research paper from Diamond. Finally, I look to the future, and speculate as to the type of EC research might be conducted at Diamond over the next 10 years. © 2015 The Author(s) Published by the Royal Society. All rights reserved.

  18. The high-frequency ESR spectra of the syntetic diamond and nanodiamonds type Ib at low temperature

    International Nuclear Information System (INIS)

    Khatsko, E.; Kobets, M.; Dergachev, K.; Kulbickas, A.; Rasteniene, L.; Vaisnoras, R.

    2013-01-01

    The ESR absorption spectra of nonirradiated and irradiated (by electrons with an energy of 2 MeV) bulk diamond and nanodiamond powder of type Ib have been studied at a wide range of frequencies (70-20 GHz) and temperature (4.2-0 K) by ESR method. It is shown, that in the ESR spectrum of bulk diamond absorption lines of ion nickel catalyst Ni +a nd a paramagnetic single center of the nitrogen N 0 is observed. Absorption lines of the paramagnetic centers with dangling bonds on the nanodiamond surface (surface defects) in the ESR spectra are obtained.

  19. A HRXRD and nano-indentation study on Ne-implanted 6H–SiC

    International Nuclear Information System (INIS)

    Xu, C.L.; Zhang, C.H.; Li, J.J.; Zhang, L.Q.; Yang, Y.T.; Song, Y.; Jia, X.J.; Li, J.Y.; Chen, K.Q.

    2012-01-01

    Specimens of 6H–SiC single crystal were irradiated at room temperature with 2.3 MeV neon ions to three successively increasing fluences of 2 × 10 14 , 1.1 × 10 15 and 3.8 × 10 15 ions/cm 2 and then annealed at room temperature, 500, 700 and 1000 °C, respectively. The strain in the specimens was investigated with a high resolution XRD spectrometer with an ω-2θ scanning. And the mechanical properties were investigated with the nano-indentation in the continuous stiffness measurement (CSM) mode with a diamond Berkovich indenter. The XRD curves of specimens after irradiation show the diffraction peaks arising at lower angles aside of the main Bragg peak Θ Bragg , indicating that a positive strain is produced in the implanted layer. In the as-implanted specimens, the strain increases with the increase of the ion fluence or energy deposition. Recovery of the strain occurs on subsequent thermal annealing treatment and two stages of defects evolution process are displayed. An interpretation of defects migration, annihilation and evolution is given to explain the strain variations of the specimens after annealing. The nano-indentation measurements show that the hardness in as-implanted specimens first increases with the increase of the ion fluence, and a degradation of hardness occurs when the ion fluence exceeds a threshold. On the subsequent annealing, the hardness variations are regarded to be a combined effect of the covalent bonding and the pinning effect of defect clusters.

  20. Graphene grown out of diamond

    Science.gov (United States)

    Gu, Changzhi; Li, Wuxia; Xu, Jing; Xu, Shicong; Lu, Chao; Xu, Lifang; Li, Junjie; Zhang, Shengbai

    2016-10-01

    Most applications of graphene need a suitable support substrate to present its excellent properties. But transferring graphene onto insulators or growing graphene on foreign substrates could cause properties diminishing. This paper reports the graphene growth directly out of diamond (111) by B doping, guided by first-principles calculations. The spontaneous graphene formation occurred due to the reconstruction of the diamond surface when the B doping density and profile are adequate. The resulting materials are defect free with high phase purity/carrier mobility, controllable layer number, and good uniformity, which can be potentially used directly for device fabrication, e.g., high-performance devices requiring good thermal conductivity.

  1. Diamond radiation detectors II. CVD diamond development for radiation detectors

    International Nuclear Information System (INIS)

    Kania, D.R.

    1997-01-01

    Interest in radiation detectors has supplied some of the impetus for improving the electronic properties of CVD diamond. In the present discussion, we will restrict our attention to polycrystalhne CVD material. We will focus on the evolution of these materials over the past decade and the correlation of detector performance with other properties of the material

  2. Cochlear Implants

    Science.gov (United States)

    ... implant, including: • How long a person has been deaf, •The number of surviving auditory nerve fibers, and • ... Implant, Severe Sensoryneurial Hearing Loss Get Involved Professional Development Practice Management ENT Careers Marketplace Privacy Policy Terms ...

  3. Controlled surface chemistry of diamond/β-SiC composite films for preferential protein adsorption.

    Science.gov (United States)

    Wang, Tao; Handschuh-Wang, Stephan; Yang, Yang; Zhuang, Hao; Schlemper, Christoph; Wesner, Daniel; Schönherr, Holger; Zhang, Wenjun; Jiang, Xin

    2014-02-04

    Diamond and SiC both process extraordinary biocompatible, electronic, and chemical properties. A combination of diamond and SiC may lead to highly stable materials, e.g., for implants or biosensors with excellent sensing properties. Here we report on the controllable surface chemistry of diamond/β-SiC composite films and its effect on protein adsorption. For systematic and high-throughput investigations, novel diamond/β-SiC composite films with gradient composition have been synthesized using the hot filament chemical vapor deposition (HFCVD) technique. As revealed by scanning electron microscopy (SEM), the diamond/β-SiC ratio of the composite films shows a continuous change from pure diamond to β-SiC over a length of ∼ 10 mm on the surface. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) was employed to unveil the surface termination of chemically oxidized and hydrogen treated surfaces. The surface chemistry of the composite films was found to depend on diamond/β-SiC ratio and the surface treatment. As observed by confocal fluorescence microscopy, albumin and fibrinogen were preferentially adsorbed from buffer: after surface oxidation, the proteins preferred to adsorb on diamond rather than on β-SiC, resulting in an increasing amount of proteins adsorbed to the gradient surfaces with increasing diamond/β-SiC ratio. By contrast, for hydrogen-treated surfaces, the proteins preferentially adsorbed on β-SiC, leading to a decreasing amount of albumin adsorbed on the gradient surfaces with increasing diamond/β-SiC ratio. The mechanism of preferential protein adsorption is discussed by considering the hydrogen bonding of the water self-association network to OH-terminated surfaces and the change of the polar surface energy component, which was determined according to the van Oss method. These results suggest that the diamond/β-SiC gradient film can be a promising material for biomedical applications which

  4. The fabrication and evaluation of diamond cold cathodes for field emitter display applications

    International Nuclear Information System (INIS)

    Fox, N.A.

    1998-08-01

    Semiconducting diamond is a candidate wide-band gap material for applications in vacuum microelectronic devices. Its potential use in components that are operated at high frequencies, handle high powers or are subjected to extremes of temperature and radiation have yet to be commercially realised. The work presented below sets out to determine whether semiconducting diamond is a suitable material for such active electronic devices by examining the most efficient means of initiating electron emission from Chemical Vapour Deposited (CVD), semiconducting diamond. Novel methods are reported for the incorporation of impurity atoms of Nitrogen and Phosphorus into CVD diamond that employ ion-implantation techniques. Demonstration of the efficient incorporation of these impurities to form donor states with low activation energies into polycrystalline diamond would facilitate efficient room temperature operation of pn junctions devices. The effectiveness of boron as a p-type dopant in CVD diamond films has enabled the investigation of potential field emitter structures using different boron concentrations in order to identify their respective conduction mechanisms and to make a comparison of their relative electron emission performance. It has been concluded that efficient electron emission is observed to originate from the interface of n + -p, silicon/diamond heterojunctions that employ thin p-type regions which are less than 5μm thick. The emission current may be controlled by the application of a low voltage forward bias of less than 1 volt. Only the np junction containing 400 ppm of boron in the p-diamond layer demonstrated forward biased electron emission. It is proposed that carrier conduction across the junction interface involves recombination and tunnelling steps between interface trap states. Furthermore it is believed that due to the junction interface being in direct contact with vacuum, within this region of the emitter structure, a surface conduction emission

  5. Transparent nanocrystalline diamond coatings and devices

    Science.gov (United States)

    Sumant, Anirudha V.; Khan, Adam

    2017-08-22

    A method for coating a substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The plasma ball has a diameter. The plasma ball is disposed at a first distance from the substrate and the substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the substrate, and a diamond coating is deposited on the substrate. The diamond coating has a thickness. Furthermore, the diamond coating has an optical transparency of greater than about 80%. The diamond coating can include nanocrystalline diamond. The microwave plasma source can have a frequency of about 915 MHz.

  6. Recent results on CVD diamond radiation sensors

    Science.gov (United States)

    Weilhammer, P.; Adam, W.; Bauer, C.; Berdermann, E.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; v. d. Eijk, R.; van Eijk, B.; Fallou, A.; Fish, D.; Fried, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knopfle, K. T.; Krammer, M.; Manfredi, P. F.; Meier, D.; LeNormand; Pan, L. S.; Pernegger, H.; Pernicka, M.; Plano, R.; Re, V.; Riester, J. L.; Roe, S.; Roff; Rudge, A.; Schieber, M.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Turchetta, R.; RD 42 Collaboration

    1998-02-01

    CVD diamond radiation sensors are being developed for possible use in trackers in the LHC experiments. The diamond promises to be radiation hard well beyond particle fluences that can be tolerated by Si sensors. Recent results from the RD 42 collaboration on charge collection distance and on radiation hardness of CVD diamond samples will be reported. Measurements with diamond tracking devices, both strip detectors and pixel detectors, will be discussed. Results from beam tests using a diamond strip detector which was read out with fast, 25 ns shaping time, radiation-hard pipeline electronics will be presented.

  7. Diamond Sensors for Energy Frontier Experiments

    CERN Document Server

    Schnetzer, Steve

    2014-01-01

    We discuss the use of diamond sensors in high-energy, high-i ntensity collider experiments. Re- sults from diamond sensor based beam conditions monitors in the ATLAS and CMS experiments at the CERN Large Hadron Collider (LHC) are presented and pla ns for diamond based luminosity monitors for the upcoming LHC run are described. We describe recent measurements on single crystal diamond sensors that indicate a polarization effec t that causes a reduction of charge col- lection efficiency as a function of particle flux. We conclude by describing new developments on the promising technology of 3D diamond sensors.

  8. Realization of a diamond based high density multi electrode array by means of Deep Ion Beam Lithography

    International Nuclear Information System (INIS)

    Picollo, F.; Battiato, A.; Bernardi, E.; Boarino, L.; Enrico, E.; Forneris, J.; Gatto Monticone, D.; Olivero, P.

    2015-01-01

    In the present work we report about a parallel-processing ion beam fabrication technique whereby high-density sub-superficial graphitic microstructures can be created in diamond. Ion beam implantation is an effective tool for the structural modification of diamond: in particular ion-damaged diamond can be converted into graphite, therefore obtaining an electrically conductive phase embedded in an optically transparent and highly insulating matrix. The proposed fabrication process consists in the combination of Deep Ion Beam Lithography (DIBL) and Focused Ion Beam (FIB) milling. FIB micromachining is employed to define micro-apertures in the contact masks consisting of thin (<10 μm) deposited metal layers through which ions are implanted in the sample. A prototypical single-cell biosensor was realized with the above described technique. The biosensor has 16 independent electrodes converging inside a circular area of 20 μm diameter (typical neuroendocrine cells size) for the simultaneous recording of amperometric signals

  9. Creating nitrogen–vacancy ensembles in diamond for coupling with flux qubit

    International Nuclear Information System (INIS)

    Zheng Ya-Rui; Xing Jian; Chang Yan-Chun; Yan Zhi-Guang; Deng Hui; Wu Yu-Lin; Lü Li; Pan Xin-Yu; Zhu Xiao-Bo; Zheng Dong-Ning

    2017-01-01

    Hybrid quantum system of negatively charged nitrogen−vacancy (NV − ) centers in diamond and superconducting qubits provide the possibility to extend the performances of both systems. In this work, we numerically simulate the coupling strength between NV − ensembles and superconducting flux qubits and obtain a lower bound of 10 16 cm −3 for NV − concentration to achieve a sufficiently strong coupling of 10 MHz when the gap between NV-ensemble and flux qubit is 0. Moreover, we create NV − ensembles in different types of diamonds by 14 N + and 12 C + ion implantation, electron irradiation, and high temperature annealing. We obtain an NV − concentration of 1.05 × 10 16 cm −3 in the diamond with 1-ppm nitrogen impurity, which is expected to have a long coherence time for the low nitrogen impurity concentration. This shows a step toward performance improvement of flux qubit-NV − hybrid system. (paper)

  10. Chemical vapor deposition of diamond onto iron based substrates. The use of barrier layers

    International Nuclear Information System (INIS)

    Weiser, P.S.; Prawer, S.

    1995-01-01

    When Fe is exposed to the plasma environment suitable for the chemical vapor deposition (CVD) of diamond, the surface is rapidly covered with a thick layer graphitic soot and C swiftly diffuses into the Fe substrate. Once the soot reaches a critical thickness, diamond films nucleate and grow on top of it. However, adhesion of the film to the substrate is poor due to the lack of structural integrity of the soot layer, A thin coating of TiN on the Fe can act to prevent diffusion and soot formation. Diamond readily grows upon the TiN via an a-C interface layer, but the a-C/TiN interface is weak and delamination occurs at this interface. In order to try and improve the adhesion, the use of a high dose Ti implant was investigated to replace the TiN coating. 7 refs., 6 figs

  11. Electroluminescence from a diamond device with ion-beam-micromachined buried graphitic electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Forneris, J., E-mail: jacopo.forneris@unito.it [Physics Department and NIS Interdepartmental Centre, University of Torino, Torino (Italy); Istituto Nazionale di Fisica Nucleare (INFN), Sez. Torino, Torino (Italy); Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia (CNISM), Sez. Torino, Torino (Italy); Battiato, A.; Gatto Monticone, D. [Physics Department and NIS Interdepartmental Centre, University of Torino, Torino (Italy); Istituto Nazionale di Fisica Nucleare (INFN), Sez. Torino, Torino (Italy); Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia (CNISM), Sez. Torino, Torino (Italy); Picollo, F. [Istituto Nazionale di Fisica Nucleare (INFN), Sez. Torino, Torino (Italy); Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia (CNISM), Sez. Torino, Torino (Italy); Physics Department and NIS Interdepartmental Centre, University of Torino, Torino (Italy); Amato, G.; Boarino, L.; Brida, G.; Degiovanni, I.P.; Enrico, E.; Genovese, M.; Moreva, E.; Traina, P. [Istituto Nazionale di Ricerca Metrologica (INRiM), Torino (Italy); Verona, C.; Verona Rinati, G. [Department of Industrial Engineering, University of Roma “Tor Vergata”, Roma (Italy); Olivero, P. [Physics Department and NIS Interdepartmental Centre, University of Torino, Torino (Italy); Istituto Nazionale di Fisica Nucleare (INFN), Sez. Torino, Torino (Italy); Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia (CNISM), Sez. Torino, Torino (Italy)

    2015-04-01

    Focused MeV ion microbeams are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk, as demonstrated in previous works with the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate the suitability of the fabrication method for the electrical excitation of color centers in diamond. Differently from photoluminescence, electroluminescence requires an electrical current flowing through the diamond sub-gap states for the excitation of the color centers. With this purpose, buried graphitic electrodes with a spacing of 10 μm were fabricated in the bulk of a detector-grade CVD single-crystal diamond sample using a scanning 1.8 MeV He{sup +} micro-beam. The current flowing in the gap region between the electrodes upon the application of a 450 V bias voltage was exploited as the excitation pump for the electroluminescence of different types of color centers localized in the above-mentioned gap. The bright light emission was spatially mapped using a confocal optical microscopy setup. The spectral analysis of electroluminescence revealed the emission from neutrally-charged nitrogen-vacancy centers (NV{sup 0}, λ{sub ZPL} = 575 nm), as well as from cluster crystal dislocations (A-band, λ = 400–500 nm). Moreover, an electroluminescence signal with appealing spectral features (sharp emission at room temperature, low phonon sidebands) from He-related defects was detected (λ{sub ZPL} = 536.3 nm, λ{sub ZPL} = 560.5 nm); a low and broad peak around λ = 740 nm was also observed and tentatively ascribed to Si-V or GR1 centers. These results pose interesting future perspectives for the fabrication of electrically-stimulated single-photon emitters in diamond for applications in quantum optics and quantum cryptography.

  12. Lateral overgrowth of diamond film on stripes patterned Ir/HPHT-diamond substrate

    Science.gov (United States)

    Wang, Yan-Feng; Chang, Xiaohui; Liu, Zhangcheng; Liu, Zongchen; Fu, Jiao; Zhao, Dan; Shao, Guoqing; Wang, Juan; Zhang, Shaopeng; Liang, Yan; Zhu, Tianfei; Wang, Wei; Wang, Hong-Xing

    2018-05-01

    Epitaxial lateral overgrowth (ELO) of diamond films on patterned Ir/(0 0 1)HPHT-diamond substrates have been carried out by microwave plasma CVD system. Ir/(0 0 1)HPHT-diamond substrates are fabricated by photolithographic and magnetron sputtering technique. The morphology of the as grown ELO diamond film is characterized by optical microscopy and scanning electronic microscopy. The quality and stress of the ELO diamond film are investigated by surface etching pit density and micro-Raman spectroscopy. Two ultraviolet photodetectors are fabricated on ELO diamond area and non-ELO diamond area prepared on same substrate, and that one on ELO diamond area indicates better photoelectric properties. All results indicate quality of ELO diamond film is improved.

  13. CVD diamond windows for infrared synchrotron applications

    International Nuclear Information System (INIS)

    Sussmann, R.S.; Pickles, C.S.J.; Brandon, J.R.; Wort, C.J.H.; Coe, S.E.; Wasenczuk, A.; Dodge, C.N.; Beale, A.C.; Krehan, A.J.; Dore, P.; Nucara, A.; Calvani, P.

    1998-01-01

    This paper describes the attributes that make diamond a unique material for infrared synchrotron beam experiments. New developments in diamond synthesised by Chemical Vapour Deposition (CVD) promise to extend the range of applications which have been hitherto limited by the availability and cost of large-size single-crystal diamond. Polycrystalline CVD diamond components such as large (100 mm) diameter windows with extremely good transparency over a wide spectral range are now commercially available. Properties of CVD diamond of relevance to optical applications, such as mechanical strength, thermal conductivity and absolute bulk absorption, are discussed. It is shown that although some of the properties of CVD diamond (similar to other polycrystalline industrial ceramics) are affected by the grain structure, currently produced CVD diamond optical components have the quality and performance required for numerous demanding applications

  14. The Many Facets of Diamond Crystals

    Directory of Open Access Journals (Sweden)

    Yuri N. Palyanov

    2018-01-01

    Full Text Available This special issue is intended to serve as a multidisciplinary forum covering broad aspects of the science, technology, and application of synthetic and natural diamonds. This special issue contains 12 papers, which highlight recent investigations and developments in diamond research related to the diverse problems of natural diamond genesis, diamond synthesis and growth using CVD and HPHT techniques, and the use of diamond in both traditional applications, such as mechanical machining of materials, and the new recently emerged areas, such as quantum technologies. The results presented in the contributions collected in this special issue clearly demonstrate that diamond occupies a very special place in modern science and technology. After decades of research, this structurally very simple material still poses many intriguing scientific questions and technological challenges. It seems undoubted that diamond will remain the center of attraction for many researchers for many years to come.

  15. Vacancy supersaturations produced by high-energy ion implantation

    International Nuclear Information System (INIS)

    Venezia, V.C.; Eaglesham, D.J.; Jacobson, D.C.; Gossmann, H.J.

    1998-01-01

    A new technique for detecting the vacancy clusters produced by high-energy ion implantation into silicon is proposed and tested. This technique takes advantage of the fact that metal impurities, such as Au, are gettered near one-half of the projected range (1/2 R p ) of MeV implants. The vacancy clustered region produced by a 2 MeV Si + implant into silicon has been labeled with Au diffused in from the front surface. The trapped Au was detected by Rutherford backscattering spectrometry (RBS) to profile the vacancy clusters. Cross section transmission electron microscopy (XTEM) analysis shows that the Au in the region of vacancy clusters is in the form of precipitates. By annealing MeV implanted samples prior to introduction of the Au, changes in the defect concentration within the vacancy clustered region were monitored as a function of annealing conditions

  16. Recent Advances in Diamond Detectors

    CERN Document Server

    Trischuk, W.

    2008-01-01

    With the commissioning of the LHC expected in 2009, and the LHC upgrades expected in 2012, ATLAS and CMS are planning for detector upgrades for their innermost layers requiring radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is now planned for all LHC experiments. This material is now being considered as an alternate sensor for use very close to the interaction region of the super LHC where the most extreme radiation conditions will exist. Recently the RD42 collaboration constructed, irradiated and tested polycrystalline and single-crystal chemical vapor deposition diamond sensors to the highest fluences available. We present beam test results of chemical vapor deposition diamond up to fluences of 1.8 x 10^16 protons/cm^2 showing that both polycrystalline and single-crystal chemical vapor deposition diamonds follow a single damage curve allowing one t...

  17. Ion beam induced luminescence characterisation of CVD diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Bettiol, A A; Gonon, P; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    The characterisation of the band structure properties of materials and devices by ion microprobe techniques has been made possible at the Melbourne MeV ion microprobe facility with the development of Ion Beam Induced Luminescence (IBIL). A number of diamond films grown by Microwave Plasma Chemical Vapour Deposition (MPCVD) on silicon substrates are analysed. A preliminary study of the luminescence properties of these samples has revealed information not previously obtainable via traditional microprobe techniques. The optical effects of incorporating dopants during the deposition process is determined using IBIL. The presence of trace element impurities introduced during growth is examined by Particle Induced X-ray Emission (PIXE), and a measurement of the film thickness is made using Rutherford Backscattering Spectrometry (RBS). 7 refs., 2 figs.

  18. Ion beam induced luminescence characterisation of CVD diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Bettiol, A.A.; Gonon, P.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    The characterisation of the band structure properties of materials and devices by ion microprobe techniques has been made possible at the Melbourne MeV ion microprobe facility with the development of Ion Beam Induced Luminescence (IBIL). A number of diamond films grown by Microwave Plasma Chemical Vapour Deposition (MPCVD) on silicon substrates are analysed. A preliminary study of the luminescence properties of these samples has revealed information not previously obtainable via traditional microprobe techniques. The optical effects of incorporating dopants during the deposition process is determined using IBIL. The presence of trace element impurities introduced during growth is examined by Particle Induced X-ray Emission (PIXE), and a measurement of the film thickness is made using Rutherford Backscattering Spectrometry (RBS). 7 refs., 2 figs.

  19. A structure development in electron-irradiated type Ia diamond

    International Nuclear Information System (INIS)

    Novikov, N.V.; Ositinskaya, T.D.; Tkach, V.N.

    1998-01-01

    A type Ia diamond crystal with nitrogen impurity in different forms was irradiated by 3.5 MeV electrons with increasing doses 5 centre dot 10 16 , 2 centre dot 10 17 , 4 centre dot 10 17 , 2 centre dot 10 18 e/cm 2 and investigated before and after each dose by positron annihilation, EPR, and optical spectroscopy. After irradiation with the highest dose, the effect of development of a visible defective structure of the crystal is revealed. A description of this effect and data of EPR and IR-measurements depending on irradiation doses are presented. First results of cathodoluminescence (CL) studies in the form CL-topograms and CL-spectra for difference zones of the crystal are also given

  20. Isotopically varying spectral features of silicon-vacancy in diamond

    International Nuclear Information System (INIS)

    Dietrich, Andreas; Jahnke, Kay D; Binder, Jan M; Rogers, Lachlan J; Jelezko, Fedor; Teraji, Tokuyuki; Isoya, Junichi

    2014-01-01

    The silicon-vacancy centre (SiV − ) in diamond has exceptional spectral properties for single-emitter quantum information applications. Most of the fluorescence is concentrated in a strong zero phonon line (ZPL), with a weak phonon sideband extending for 100 nm that contains several clear features. We demonstrate that the ZPL position can be used to reliably identify the silicon isotope present in a single SiV − centre. This is of interest for quantum information applications since only the 29 Si isotope has nuclear spin. In addition, we show that the sharp 64 meV phonon peak is due to a local vibrational mode of the silicon atom. The presence of a local mode suggests a plausible origin of the measured isotopic shift of the ZPL. (paper)

  1. Study of indium-defect interactions in diamond using 2-D CEEC

    CERN Document Server

    Storbeck, E J; Wahl, U; Connell, S H; Sellschop, J P Friedel

    2000-01-01

    Channeling has, since its inception, proven to be a valuable tool in locating the geometric position of atoms in the crystal lattice. Allied with powerful theoretical models, it can yield detailed information on the positions that these impurities occupy. $^{111}$In, a radioactive isotope with a conveniently short half-life, is an often-used probe of heavy-atom doping of materials. Previous work has centred on the lattice location of $^{111}$In implanted in type IIa diamond. Theoretical calculations on this `pure' system have also recently been made. We have performed the first studies of $^{111}$In implanted into various carefully selected, defect-rich diamond systems and obtained fractions for the sites occupied. The defect systems investigated include nitrogen in various configurations, boron, hydrogen and vacancies. The use of two-dimensional conversion-electron emission channeling (CEEC) has enabled the system to be studied in greater detail than with conventional one-dimensional CEEC. Coupled with the a...

  2. Cosmogenic helium and volatile-rich fluid in Sierra leone alluvial diamonds

    International Nuclear Information System (INIS)

    McConville, P.; Reynolds, J.H.

    1989-01-01

    Pursuant to the discovery elsewhere of cosmogenic 10 Be in alluvial diamond fragments from Zaire, noble gas measurements were made on two identical splits of a finely powdered, harshly acid-washed sample derived from selected (for clarity) fragments of a single alluvial diamond from Sierra Leone (sample LJA → L4 and L5). Essentially identical results were obtained for both splits. Isotopic ratios for Ar, Kr, and Xe were atmospheric and their elemental abundances were high relative to published data, owing to shock implantation in the crushing as verified in a supplementary experiment. No neon was detected above blank level. 3 He was exceptionally abundant, 4 He exceptionally depleted, possibly from the acid wash, and the ratio 3 He/ 4 He almost unprecedentedly high at an R/R a value of 246 ± 16. The results support the hypothesis that excess 3 He in diamonds is cosmogenic, although a cosmic-ray exposure of 5, 35, or (impossibly) 152 Ma for cyclic gardening of the sample to a maximum depth of 0, 4.6 m, or 20 m, respectively, is required. Troublesome for the cosmogenic hypothesis is a sample from very deep in the Finsch mine, South Africa, found by Zadnik et al (1987) to have an R/R a value of 1,000. This paper includes histograms of noble gas data published prior to mid-1988 for diamonds of known provenance. The Sierra Leone diamond studied in the supplementary experiment belongs to a distinct population of 40* Ar-rich diamonds consisting mostly of cubic diamonds for Zaire

  3. Effect of low-damage inductively coupled plasma on shallow nitrogen-vacancy centers in diamond

    Energy Technology Data Exchange (ETDEWEB)

    Fávaro de Oliveira, Felipe; Momenzadeh, S. Ali; Wang, Ya; Denisenko, Andrej, E-mail: a.denisenko@physik.uni-stuttgart.de [3. Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart, 70569 Stuttgart (Germany); Konuma, Mitsuharu [Max Planck Institute for Solid State Research, 70569 Stuttgart (Germany); Markham, Matthew; Edmonds, Andrew M. [Element Six Innovation, Harwell Oxford, Didcot, Oxfordshire OX11 0QR (United Kingdom); Wrachtrup, Jörg [3. Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart, 70569 Stuttgart (Germany); Max Planck Institute for Solid State Research, 70569 Stuttgart (Germany)

    2015-08-17

    Near-surface nitrogen-vacancy (NV) centers in diamond have been successfully employed as atomic-sized magnetic field sensors for external spins over the last years. A key challenge is still to develop a method to bring NV centers at nanometer proximity to the diamond surface while preserving their optical and spin properties. To that aim we present a method of controlled diamond etching with nanometric precision using an oxygen inductively coupled plasma process. Importantly, no traces of plasma-induced damages to the etched surface could be detected by X-ray photoelectron spectroscopy and confocal photoluminescence microscopy techniques. In addition, by profiling the depth of NV centers created by 5.0 keV of nitrogen implantation energy, no plasma-induced quenching in their fluorescence could be observed. Moreover, the developed etching process allowed even the channeling tail in their depth distribution to be resolved. Furthermore, treating a {sup 12}C isotopically purified diamond revealed a threefold increase in T{sub 2} times for NV centers with <4 nm of depth (measured by nuclear magnetic resonance signal from protons at the diamond surface) in comparison to the initial oxygen-terminated surface.

  4. The use of Raman scattering for studying the defects created by implantation in semiconductors

    International Nuclear Information System (INIS)

    Morhange, J.F.; Beserman, R.; Bourgoin, J.

    1974-01-01

    The evolution of Raman scattering with the dose of implanted ions and annealing temperature in silicon and diamond was studied. The variation in the concentration of the defects introduced by implantation, with the dose and annealing temperature were deduced. These results were compared with results obtained using electron paramagnetic resonance. The comparison shows that Raman scattering is a good technique to study the behavior of the defects in ion implanted semiconductors [fr

  5. Magnetic properties of point defects in proton irradiated diamond

    Energy Technology Data Exchange (ETDEWEB)

    Makgato, T.N., E-mail: Thuto.Makgato@students.wits.ac.za [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Sideras-Haddad, E. [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Center of Excellence in Strong Materials, Physics Building, University of the Witwatersrand, Johannesburg 2050 (South Africa); Ramos, M.A. [CMAM, Centro de Micro-Analisis de Materiales, Universidad Autónoma de Madrid, C/Faraday 3, Campus de Cantoblanco, E-28049 Madrid (Spain); Departamento de Fisica de la Materia Condensada, Condensed Matter Physics Center (IFIMAC) and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, 28049 Madrid (Spain); García-Hernández, M. [Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049 Madrid (Spain); Climent-Font, A.; Zucchiatti, A.; Muñoz-Martin, A. [CMAM, Centro de Micro-Analisis de Materiales, Universidad Autónoma de Madrid, C/Faraday 3, Campus de Cantoblanco, E-28049 Madrid (Spain); Shrivastava, S. [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Erasmus, R. [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Center of Excellence in Strong Materials, Physics Building, University of the Witwatersrand, Johannesburg 2050 (South Africa)

    2016-09-01

    We investigate the magnetic properties of ultra-pure type-IIa diamond following irradiation with proton beams of ≈1–2 MeV energy. SQUID magnetometry indicate the formation of Curie type paramagnetism according to the Curie law. Raman and Photoluminescence spectroscopy measurements show that the primary structural features created by proton irradiation are the centers: GR1, ND1, TR12 and 3H. The Stopping and Range of Ions in Matter (SRIM) Monte Carlo simulations together with SQUID observations show a strong correlation between vacancy production, proton fluence and the paramagnetic factor. At an average surface vacancy spacing of ≈1–1.6 nm and bulk (peak) vacancy spacing of ≈0.3-0.5 nm Curie paramagnetism is induced by formation of ND1 centres with an effective magnetic moment μ{sub eff}~(0.1–0.2)μ{sub B}. No evidence of long range magnetic ordering is observed in the temperature range 4.2-300 K. - Highlights: • Proton macro-irradiation of pure diamond creates fluence dependent paramagnetism. • The effective magnetic moment is found to be in the range μ{sub eff}~(0.1–0.2)μ{sub B}. • No evidence of long range magnetic ordering is observed.

  6. Magnetic properties of point defects in proton irradiated diamond

    International Nuclear Information System (INIS)

    Makgato, T.N.; Sideras-Haddad, E.; Ramos, M.A.; García-Hernández, M.; Climent-Font, A.; Zucchiatti, A.; Muñoz-Martin, A.; Shrivastava, S.; Erasmus, R.

    2016-01-01

    We investigate the magnetic properties of ultra-pure type-IIa diamond following irradiation with proton beams of ≈1–2 MeV energy. SQUID magnetometry indicate the formation of Curie type paramagnetism according to the Curie law. Raman and Photoluminescence spectroscopy measurements show that the primary structural features created by proton irradiation are the centers: GR1, ND1, TR12 and 3H. The Stopping and Range of Ions in Matter (SRIM) Monte Carlo simulations together with SQUID observations show a strong correlation between vacancy production, proton fluence and the paramagnetic factor. At an average surface vacancy spacing of ≈1–1.6 nm and bulk (peak) vacancy spacing of ≈0.3-0.5 nm Curie paramagnetism is induced by formation of ND1 centres with an effective magnetic moment μ eff ~(0.1–0.2)μ B . No evidence of long range magnetic ordering is observed in the temperature range 4.2-300 K. - Highlights: • Proton macro-irradiation of pure diamond creates fluence dependent paramagnetism. • The effective magnetic moment is found to be in the range μ eff ~(0.1–0.2)μ B . • No evidence of long range magnetic ordering is observed.

  7. i-anvils : in situ measurements of pressure, temperature and conductivity in diamond anvil cells

    Science.gov (United States)

    Munsch, P.; Bureau, H.; Kubsky, S.; Meijer, J.; Datchi, F.; Ninet, S.; Estève, I.

    2011-12-01

    The precise determination of the pressure and temperature conditions during diamond anvils cells (DAC) experiments is of primary importance. Such determinations are critical more especially for the fields corresponding to "low pressures" (micro-structures are implanted in the diamond anvil lattice a few micrometers below the surface, the sensors are located a few μm below the center of the diamond culet (sample chamber position). When conductive electrodes are implanted at the position of the sample chamber on the culet of the anvil, instead of P,T sensors, they allow in situ measurements of electrical properties of the loaded sample at high P,T conditions in a DAC. The principle consists of applying an electrical potential across the structures through external contacts placed on the slopes of the anvil. The resistivity of these structures is sensitive to pressure and temperature applied in the sample chamber. The electrical transport properties of the sample can be measured the same way when electrodes have been implanted on the culet. Here we will present our last progresses, more especially using the focus ion beam (FIB) technology to perform contacts and electrodes. Progresses about the i-anvils connexions with the electronic devices will also be shown. We will present the last P and T sensors calibrations. Furnaces are also introduced through Boron implantation into the anvils, allowing the possibility to reach intermediate temperatures between externally heated DAC (up to 1100°C) and laser heated DAC (from 1500°C to a few thousands). Preliminary tests and the interest of such devices will be discussed at the meeting. A new diamond anvil cell has been especially designed for this purpose. This DAC allows in situ spectroscopies and X-Ray characterisation of geological fluids in their equilibrium conditions in the crust and in the upper mantle. Preliminary results will be presented.

  8. SiV color centers in Si-doped isotopically enriched {sup 12}C and {sup 13}C CVD diamonds

    Energy Technology Data Exchange (ETDEWEB)

    Sedov, Vadim; Bolshakov, Andrey [General Physics Institute, RAS, Moscow (Russian Federation); National Research Nuclear University MEPhI, Moscow (Russian Federation); Boldyrev, Kirill [Institute of Spectroscopy, RAS, Troitsk, Moscow (Russian Federation); Krivobok, Vladimir; Nikolaev, Sergei [Lebedev Physical Institute, RAS, Moscow (Russian Federation); Khomich, Alex [Institute of Radio Engineering and Electronics, RAS, Fryazino (Russian Federation); Khomich, Andrew [General Physics Institute, RAS, Moscow (Russian Federation); Institute of Radio Engineering and Electronics, RAS, Fryazino (Russian Federation); Krasilnikov, Anatoly [Institution ' ' ProjectCenter ITER' ' , Moscow (Russian Federation); Ralchenko, Victor [General Physics Institute, RAS, Moscow (Russian Federation); National Research Nuclear University MEPhI, Moscow (Russian Federation); Harbin Institute of Technology, Harbin (China)

    2017-11-15

    The effect of isotopic modification of diamond lattice on photoluminescence (PL) and optical absorption spectra of ensembles of SiV{sup -} centers was studied. Thin epitaxial diamond layers were grown by a microwave plasma CH{sub 4}/H{sub 2} mixtures using methane enriched to 99.96% for either {sup 12}C or {sup 13}C isotopes, while the Si doping was performed by adding a small percentage of silane SiH{sub 4} into the plasma. Temperature dependent SiV{sup -} ZPL spectra in absorption were measured at 3-80 K to monitor the evolution of the ZPL fine structure. It is found that the SiV{sup -} ZPL at 736.9 nm observed in PL for {sup 12}C diamond at T = 5 K, exhibits a blue shift of 1.78 meV, to 736.1 nm in {sup 13}C diamond matrix. Narrow ZPL with the width (FWHM) of 0.09 meV (21 GHz) was measured in absorption spectra at T = 3-30 K in the Si-doped {sup 13}C diamond. Besides the charged SiV{sup -} center, the absorption of the neutral SiV{sup 0} defect at 946 nm wavelength has also been detected. From changes observed in SiV{sup -} phonon band structure in PL with isotopic modification, the band at 64 meV was confirmed to be a local vibration mode (LVM) involving a Si atom. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Splitting of photoluminescent emission from nitrogen–vacancy centers in diamond induced by ion-damage-induced stress

    International Nuclear Information System (INIS)

    Olivero, P; Bosia, F; Fairchild, B A; Gibson, B C; Greentree, A D; Spizzirri, P; Prawer, S

    2013-01-01

    We report a systematic investigation on the spectral splitting of negatively charged, nitrogen–vacancy (NV − ) photoluminescent emission in single-crystal diamond induced by strain engineering. The stress fields arise from MeV ion-induced conversion of diamond to amorphous and graphitic material in regions proximal to the centers of interest. In low-nitrogen sectors of a high-pressure–high-temperature diamond, clearly distinguishable spectral components in the NV − emission develop over a range of ∼4.8 THz corresponding to distinct alignment of sub-ensembles which were mapped with micron spatial resolution. This method provides opportunities for the creation and selection of aligned NV − centers for ensemble quantum information protocols. (paper)

  10. Tribological effects of oxygen ion implantation into stainless steel

    International Nuclear Information System (INIS)

    Evans, P.J.; Vilaithong, T.; Yu, L.D.; Monteiro, O.R.; Yu, K.M.; Brown, I.G.

    2000-01-01

    The formation of sub-surface oxide layers by hybrid metal-gas co-implantation into steel and other metals can improve their tribological properties. In this report, we compare the wear and friction performance of previously studied Al + O hybrid implants with that produced by single species oxygen ion (O + ) implantation under similar conditions. The substrates were AISI 304L stainless steel discs polished to a final mirror finish using 1 μm diamond paste, and the ion implantation was done using a conventional swept-beam technique at ion energies of 70 or 140 keV and doses of up to 1x10 17 cm -2 . The wear and friction behaviour of the implanted and unimplanted material was measured with a pin-on-disc tribometer. Here we describe the experimental procedure and results, and discuss the improvement relative to that achieved with surface layers modified by metal-gas co-implantation

  11. DC plasma ion implantation in an inductively coupled RF plasma

    International Nuclear Information System (INIS)

    Silawatshananai, C.; Matan, N.; Pakpum, C.; Pussadee, N.; Srisantitam, P.; Davynov, S.; Vilaithong, T.

    2004-01-01

    Various modes of plasma ion implantation have been investigated in a small inductively coupled 13.6 MHz RF plasma source. Plasma ion implantation with HVDC(up to -10 kV bias) has been investigated in order to incorporate with the conventional implantation of diamond like carbon. In this preliminary work, nitrogen ions are implanted into the stainless steel sample with a dose of 5.5 x 10 -2 cm for a short implanting time of 7 minutes without target cooling. Surface properties such as microhardness, wear rate and the friction coefficient have been improved. X-ray and SEM analyses show distinct structural changes on the surface. A combination of sheath assisted implantation and thermal diffusion may be responsible for improvement in surface properties. (orig.)

  12. Adhesion of staphylococcal and Caco-2 cells on diamond-like carbon polymer hybrid coating.

    Science.gov (United States)

    Kinnari, Teemu J; Soininen, Antti; Esteban, Jaime; Zamora, Nieves; Alakoski, Esa; Kouri, Vesa-Petteri; Lappalainen, Reijo; Konttinen, Yrjö T; Gomez-Barrena, Enrique; Tiainen, Veli-Matti

    2008-09-01

    Staphylococci cause the majority of the nosocomial implant-related infections initiated by adhesion of planktonic bacteria to the implant surface. It was hypothesized that plasma accelerating filtered pulsed arc discharge method enables combination of the advantageous properties of diamond with the antisoiling properties of polymers. Diamond-like carbon polytetrafluoroethylene hybrid (DLC-PTFE-h) coating was produced. The adhesion of S. aureus ATCC 25923 (10(8) colony-forming units/mL) to surfaces diminished from 2.32%, 2.35%, and 2.57% of high quality DLC, titanium, and oxidized silicon, respectively, to 1.93% of DLC-PTFE-h. For S. epidermidis ATCC 35984 the corresponding figures were 3.90%, 3.32%, 3.47%, and 2.57%. Differences in bacterial adhesion between recombinant DLC-PTFE-h and other materials were statistically significant (p DLC-PTFE-h as to DLC, titanium, or silicon, which were all in the MTT test found to be cytocompatible. DLC-PTFE-h coating can be used to modify the surface properties of any surgical implants and is an unfavorable substrate for staphylococcal cells, but compatible with human Caco-2 cells. DLC-PTFE-h coating may help in the combat against Staphylococcus-related implant infections which usually require both antibiotics and surgical removal of the implant for cure.

  13. Copper-micrometer-sized diamond nanostructured composites

    International Nuclear Information System (INIS)

    Nunes, D; Livramento, V; Fernandes, H; Silva, C; Carvalho, P A; Shohoji, N; Correia, J B

    2011-01-01

    Reinforcement of a copper matrix with diamond enables tailoring the properties demanded for thermal management applications at high temperature, such as the ones required for heat sink materials in low activated nuclear fusion reactors. For an optimum compromise between thermal conductivity and mechanical properties, a novel approach based on multiscale diamond dispersions is proposed: a Cu-nanodiamond composite produced by milling is used as a nanostructured matrix for further dispersion of micrometer-sized diamondDiamond). A series of Cu-nanodiamond mixtures have been milled to establish a suitable nanodiamond fraction. A refined matrix with homogeneously dispersed nanoparticles was obtained with 4 at.% μDiamond for posterior mixture with microdiamond and subsequent consolidation. Preliminary consolidation by hot extrusion of a mixture of pure copper and μDiamond has been carried out to define optimal processing parameters. The materials produced were characterized by x-ray diffraction, scanning and transmission electron microscopy and microhardness measurements.

  14. Diamond nanowires: fabrication, structure, properties, and applications.

    Science.gov (United States)

    Yu, Yuan; Wu, Liangzhuan; Zhi, Jinfang

    2014-12-22

    C(sp(3) )C-bonded diamond nanowires are wide band gap semiconductors that exhibit a combination of superior properties such as negative electron affinity, chemical inertness, high Young's modulus, the highest hardness, and room-temperature thermal conductivity. The creation of 1D diamond nanowires with their giant surface-to-volume ratio enhancements makes it possible to control and enhance the fundamental properties of diamond. Although theoretical comparisons with carbon nanotubes have shown that diamond nanowires are energetically and mechanically viable structures, reproducibly synthesizing the crystalline diamond nanowires has remained challenging. We present a comprehensive, up-to-date review of diamond nanowires, including a discussion of their synthesis along with their structures, properties, and applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. The Toucan's Diamond

    Science.gov (United States)

    2006-06-01

    The Southern constellation Tucana (the Toucan) is probably best known as the home of the Small Magellanic Cloud, one of the satellite galaxies of the Milky Way. But Tucana also hosts another famous object that shines thousands of lights, like a magnificent, oversized diamond in the sky: the globular cluster 47 Tucanae. More popularly known as 47 Tuc, it is surpassed in size and brightness by only one other globular cluster, Omega Centauri. Globular clusters are gigantic families of stars, comprising several tens of thousands of stars, all thought to be born at the same time from the same cloud of gas [1]. As such, they constitute unique laboratories for the study of how stars evolve and interact. This is even more so because they are located at the same distance, so the brightness of different types of stars, at different stages in their evolution can be directly compared. The stars in globular clusters are held together by their mutual gravity which gives them their spherical shape, hence their name. Globular clusters are thought to be among the oldest objects in our Milky Way galaxy, and contain therefore mostly old, low-mass stars. ESO PR Photo 20/06 ESO PR Photo 20/06 Globular Cluster 47 Tuc 47 Tucanae is an impressive globular cluster that is visible with the unaided eye from the southern hemisphere. It was discovered in 1751 by the French astronomer Nicholas Louis de Lacaille who cataloged it in his list of southern nebulous objects. Located about 16 000 light years away, it has a total mass of about 1 million times the mass of the Sun and is 120 light years across, making it appear on the sky as big as the full moon. The colour image of 47 Tucanae presented here was taken with FORS1 on ESO's Very Large Telescope in 2001. The image covers only the densest, very central part of the cluster. The globular cluster extends in reality four times further away! As can be seen however, the density of stars rapidly drops off when moving away from the centre. The red

  16. Diamond turning machine controller implementation

    Energy Technology Data Exchange (ETDEWEB)

    Garrard, K.P.; Taylor, L.W.; Knight, B.F.; Fornaro, R.J.

    1988-12-01

    The standard controller for a Pnuemo ASG 2500 Diamond Turning Machine, an Allen Bradley 8200, has been replaced with a custom high-performance design. This controller consists of four major components. Axis position feedback information is provided by a Zygo Axiom 2/20 laser interferometer with 0.1 micro-inch resolution. Hardware interface logic couples the computers digital and analog I/O channels to the diamond turning machine`s analog motor controllers, the laser interferometer, and other machine status and control information. It also provides front panel switches for operator override of the computer controller and implement the emergency stop sequence. The remaining two components, the control computer hardware and software, are discussed in detail below.

  17. Conductive diamond electrodes for water purification

    Directory of Open Access Journals (Sweden)

    Carlos Alberto Martínez-Huitle

    2007-12-01

    Full Text Available Nowadays, synthetic diamond has been studied for its application in wastewater treatment, electroanalysis, organic synthesis and sensor areas; however, its use in the water disinfection/purification is its most relevant application. The new electrochemistry applications of diamond electrodes open new perspectives for an easy, effective, and chemical free water treatment. This article highlights and summarizes the results of a selection of papers dealing with electrochemical disinfection using synthetic diamond films.

  18. Modifying thin film diamond for electronic applications

    International Nuclear Information System (INIS)

    Baral, B.

    1999-01-01

    The unique combination of properties that diamond possesses are being exploited in both electronic and mechanical applications. An important step forward in the field has been the ability to grow thin film diamond by chemical vapour deposition (CVD) methods and to control parameters such as crystal orientation, dopant level and surface roughness. An extensive understanding of the surface of any potential electronic material is vital to fully comprehend its behaviour within device structures. The surface itself ultimately controls key aspects of device performance when interfaced with other materials. This study has provided insight into important chemical reactions on polycrystalline CVD diamond surfaces, addressing how certain surface modifications will ultimately affect the properties of the material. A review of the structure, bonding, properties and potential of diamond along with an account of the current state of diamond technology and CVD diamond growth is provided. The experimental chapter reviews bulk material and surface analytical techniques employed in this work and is followed by an investigation of cleaning treatments for polycrystalline CVD diamond aimed at removing non-diamond carbon from the surface. Selective acid etch treatments are compared and contrasted for efficacy with excimer laser irradiation and hydrogen plasma etching. The adsorption/desorption kinetics of potential dopant-containing precursors on polycrystalline CVD diamond surfaces have been investigated to compare their effectiveness at introducing dopants into the diamond during the growth stage. Both boron and sulphur-containing precursor compounds have been investigated. Treating polycrystalline CVD diamond in various atmospheres / combination of atmospheres has been performed to enhance electron field emission from the films. Films which do not emit electrons under low field conditions can be modified such that they emit at fields as low as 10 V/μm. The origin of this enhancement

  19. Surface Structure of Aerobically Oxidized Diamond Nanocrystals

    Science.gov (United States)

    2014-10-27

    Diamond. Phys. Rev. Lett. 2000, 84, 5160−5163. (31) Ownby, P. D.; Yang, X.; Liu, J. Calculated X-Ray-Diffraction Data for Diamond Polytypes. J. Am. Ceram...Surfaces from Ab-Initio Calculations . Phys. Rev. B 1995, 51, 14669−14685. (39) Ferrari, A. C.; Robertson, J. Raman Spectroscopy of Amorphous, Nanostructured...Y.; Takami, S.; Kubo , M.; Belosludov, R. V.; Miyamoto, A.; Imamura, A.; Gamo, M. N.; Ando, T. First-Principle Study on Reactions of Diamond (100

  20. Annealing of Al implanted 4H silicon carbide

    International Nuclear Information System (INIS)

    Hallen, A; Suchodolskis, A; Oesterman, J; Abtin, L; Linnarsson, M

    2006-01-01

    Al ions were implanted with multiple energies up to 250 keV at elevated temperatures in n-type 4H SiC epitaxial layers to reach a surface concentration of 1x10 20 cm -3 . These samples were then annealed at temperatures between 1500 and 1950 deg. C. A similar 4H SiC epitaxial sample was implanted by MeV Al ions to lower doses and annealed only at 200 and 400 deg. C. After annealing, cross-sections of the samples were characterized by scanning spreading resistance microscopy (SSRM). The results show that the resistivity of high-dose Al implanted samples has not reached a saturated value, even after annealing at the highest temperature. For the MeV Al implanted sample, the activation of Al has not yet started, but a substantial annealing of the implantation induced damage can be seen from the SSRM depth profiles

  1. Entanglement, holography and causal diamonds

    Science.gov (United States)

    de Boer, Jan; Haehl, Felix M.; Heller, Michal P.; Myers, Robert C.

    2016-08-01

    We argue that the degrees of freedom in a d-dimensional CFT can be reorganized in an insightful way by studying observables on the moduli space of causal diamonds (or equivalently, the space of pairs of timelike separated points). This 2 d-dimensional space naturally captures some of the fundamental nonlocality and causal structure inherent in the entanglement of CFT states. For any primary CFT operator, we construct an observable on this space, which is defined by smearing the associated one-point function over causal diamonds. Known examples of such quantities are the entanglement entropy of vacuum excitations and its higher spin generalizations. We show that in holographic CFTs, these observables are given by suitably defined integrals of dual bulk fields over the corresponding Ryu-Takayanagi minimal surfaces. Furthermore, we explain connections to the operator product expansion and the first law of entanglemententropy from this unifying point of view. We demonstrate that for small perturbations of the vacuum, our observables obey linear two-derivative equations of motion on the space of causal diamonds. In two dimensions, the latter is given by a product of two copies of a two-dimensional de Sitter space. For a class of universal states, we show that the entanglement entropy and its spin-three generalization obey nonlinear equations of motion with local interactions on this moduli space, which can be identified with Liouville and Toda equations, respectively. This suggests the possibility of extending the definition of our new observables beyond the linear level more generally and in such a way that they give rise to new dynamically interacting theories on the moduli space of causal diamonds. Various challenges one has to face in order to implement this idea are discussed.

  2. Entanglement, holography and causal diamonds

    Energy Technology Data Exchange (ETDEWEB)

    Boer, Jan de [Institute of Physics, Universiteit van Amsterdam,Science Park 904, 1090 GL Amsterdam (Netherlands); Haehl, Felix M. [Centre for Particle Theory & Department of Mathematical Sciences, Durham University,South Road, Durham DH1 3LE (United Kingdom); Heller, Michal P.; Myers, Robert C. [Perimeter Institute for Theoretical Physics,31 Caroline Street North, Waterloo, Ontario N2L 2Y5 (Canada)

    2016-08-29

    We argue that the degrees of freedom in a d-dimensional CFT can be re-organized in an insightful way by studying observables on the moduli space of causal diamonds (or equivalently, the space of pairs of timelike separated points). This 2d-dimensional space naturally captures some of the fundamental nonlocality and causal structure inherent in the entanglement of CFT states. For any primary CFT operator, we construct an observable on this space, which is defined by smearing the associated one-point function over causal diamonds. Known examples of such quantities are the entanglement entropy of vacuum excitations and its higher spin generalizations. We show that in holographic CFTs, these observables are given by suitably defined integrals of dual bulk fields over the corresponding Ryu-Takayanagi minimal surfaces. Furthermore, we explain connections to the operator product expansion and the first law of entanglement entropy from this unifying point of view. We demonstrate that for small perturbations of the vacuum, our observables obey linear two-derivative equations of motion on the space of causal diamonds. In two dimensions, the latter is given by a product of two copies of a two-dimensional de Sitter space. For a class of universal states, we show that the entanglement entropy and its spin-three generalization obey nonlinear equations of motion with local interactions on this moduli space, which can be identified with Liouville and Toda equations, respectively. This suggests the possibility of extending the definition of our new observables beyond the linear level more generally and in such a way that they give rise to new dynamically interacting theories on the moduli space of causal diamonds. Various challenges one has to face in order to implement this idea are discussed.

  3. Thermal Conductivity of Diamond Composites

    Directory of Open Access Journals (Sweden)

    Fedor M. Shakhov

    2009-12-01

    Full Text Available A major problem challenging specialists in present-day materials sciences is the development of compact, cheap to fabricate heat sinks for electronic devices, primarily for computer processors, semiconductor lasers, high-power microchips, and electronics components. The materials currently used for heat sinks of such devices are aluminum and copper, with thermal conductivities of about 250 W/(m·K and 400 W/(m·K, respectively. Significantly, the thermal expansion coefficient of metals differs markedly from those of the materials employed in semiconductor electronics (mostly silicon; one should add here the low electrical resistivity metals possess. By contrast, natural single-crystal diamond is known to feature the highest thermal conductivity of all the bulk materials studied thus far, as high as 2,200 W/(m·K. Needless to say, it cannot be applied in heat removal technology because of high cost. Recently, SiC- and AlN-based ceramics have started enjoying wide use as heat sink materials; the thermal conductivity of such composites, however, is inferior to that of metals by nearly a factor two. This prompts a challenging scientific problem to develop diamond-based composites with thermal characteristics superior to those of aluminum and copper, adjustable thermal expansion coefficient, low electrical conductivity and a moderate cost, below that of the natural single-crystal diamond. The present review addresses this problem and appraises the results reached by now in studying the possibility of developing composites in diamond-containing systems with a view of obtaining materials with a high thermal conductivity.

  4. Diamond turning of thermoplastic polymers

    Energy Technology Data Exchange (ETDEWEB)

    Smith, E.; Scattergood, R.O.

    1988-12-01

    Single point diamond turning studies were made using a series of thermoplastic polymers with different glass transition temperatures. Variations in surface morphology and surface roughness were observed as a function of cutting speed. Lower glass transition temperatures facilitate smoother surface cuts and better surface finish. This can be attributed to the frictional heating that occurs during machining. Because of the very low glass transition temperatures in polymeric compared to inorganic glasses, the precision machining response can be very speed sensitive.

  5. Diamond coating in accelerator structure

    International Nuclear Information System (INIS)

    Lin, X.E.

    1998-08-01

    The future accelerators with 1 GeV/m gradient will give rise to hundreds of degrees instantaneous temperature rise on the copper surface. Due to its extraordinary thermal and electric properties, diamond coating on the surface is suggested to remedy this problem. Multi-layer structure, with the promise of even more temperature reduction, is also discussed, and a proof of principle experiment is being carried out

  6. Thin film diamond microstructure applications

    Science.gov (United States)

    Roppel, T.; Ellis, C.; Ramesham, R.; Jaworske, D.; Baginski, M. E.; Lee, S. Y.

    1991-01-01

    Selective deposition and abrasion, as well as etching in atomic oxygen or reduced-pressure air, have been used to prepare patterned polycrystalline diamond films which, on further processing by anisotropic Si etching, yield the microstructures of such devices as flow sensors and accelerometers. Both types of sensor have been experimentally tested in the respective functions of hot-wire anemometer and both single- and double-hinged accelerometer.

  7. Evaluation and comparison of absorbed dose for electron beams by LiF and diamond dosimeters

    International Nuclear Information System (INIS)

    Mosia, G.J.; Chamberlain, A.C.

    2007-01-01

    The absorbed dose response of LiF and diamond thermoluminescent dosimeters (TLDs), calibrated in 60 Co γ-rays, has been determined using the MCNP4B Monte Carlo code system in mono-energetic megavoltage electron beams from 5 to 20 MeV. Evaluation of the dose responses was done against the dose responses of published works by other investigators. Dose responses of both dosimeters were compared to establish if any relation exists between them. The dosimeters were irradiated in a water phantom with the centre of their top surfaces (0.32x0.32 cm 2 ), placed at d max perpendicular to the radiation beam on the central axis. For LiF TLD, dose responses ranged from 0.945±0.017 to 0.997±0.011. For the diamond TLD, the dose response ranged from 0.940±0.017 to 1.018±0.011. To correct for dose responses by both dosimeters, energy correction factors were generated from dose response results of both TLDs. For LiF TLD, these correction factors ranged from 1.003 up to 1.058 and for diamond TLD the factors ranged from 0.982 up to 1.064. The results show that diamond TLDs can be used in the place of the well-established LiF TLDs and that Monte Carlo code systems can be used in dose determinations for radiotherapy treatment planning

  8. Dedicated multichannel readout ASIC coupled with single crystal diamond for dosimeter application

    International Nuclear Information System (INIS)

    Fabbri, A; Notaristefani, F De; Galasso, M; Cencelli, V Orsolini; Falco, M D; Marinelli, M; Tortora, L; Verona, C; Rinati, G Verona

    2013-01-01

    This paper reports on the tests of a low-noise, multi-channel readout integrated circuit used as a readout electronic front-end for a diamond multi-pixel dosimeter. The system is developed for dose distribution measurement in radiotherapy applications. The first 10-channel prototype chip was designed and fabricated in a 0.18 um CMOS process. Every channel includes a charge integrator with a 10 pF capacitor and a double slope A/D converter. The diamond multi-pixel detector, based on CVD synthetic single crystal diamond Schottky diodes, is made by a 3 × 3 sensor matrix. The overall device has been tested under irradiation with 6 MeV radio therapeutic photon beams at the Policlinico ''Tor Vergata'' (PTV) hospital. Measurements show a 20 fA RMS leakage current from the front-end input stage and a negligible dark current from the diamond detector, a stable temporal response and a good linear behaviour as a function of both dose and dose rate. These characteristics were common to each tested channel.

  9. Anisotropic diamond etching through thermochemical reaction between Ni and diamond in high-temperature water vapour.

    Science.gov (United States)

    Nagai, Masatsugu; Nakanishi, Kazuhiro; Takahashi, Hiraku; Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi; Matsumoto, Tsubasa; Inokuma, Takao; Tokuda, Norio

    2018-04-27

    Diamond possesses excellent physical and electronic properties, and thus various applications that use diamond are under development. Additionally, the control of diamond geometry by etching technique is essential for such applications. However, conventional wet processes used for etching other materials are ineffective for diamond. Moreover, plasma processes currently employed for diamond etching are not selective, and plasma-induced damage to diamond deteriorates the device-performances. Here, we report a non-plasma etching process for single crystal diamond using thermochemical reaction between Ni and diamond in high-temperature water vapour. Diamond under Ni films was selectively etched, with no etching at other locations. A diamond-etching rate of approximately 8.7 μm/min (1000 °C) was successfully achieved. To the best of our knowledge, this rate is considerably greater than those reported so far for other diamond-etching processes, including plasma processes. The anisotropy observed for this diamond etching was considerably similar to that observed for Si etching using KOH.

  10. 76 FR 37684 - Airworthiness Directives; Diamond Aircraft Industries GmbH Model (Diamond) DA 40 Airplanes...

    Science.gov (United States)

    2011-06-28

    ... Industries GmbH Model (Diamond) DA 40 Airplanes Equipped With Certain Cabin Air Conditioning Systems AGENCY... inspections of the Diamond Model DA 40 airplanes equipped with a VCS installed per Premier Aircraft Service... GmbH Model (Diamond) DA 40 Airplanes Equipped With Certain Cabin Air Conditioning Systems: Docket No...

  11. Comparison between beryllium and diamond-backing plates in diamond-anvil cells

    DEFF Research Database (Denmark)

    Periotto, Benedetta; Nestola, Fabrizio; Balic Zunic, Tonci

    2011-01-01

    A direct comparison between two complete intensity datasets, collected on the same sample loaded in two identical diamond-anvil pressure cells equipped, respectively, with beryllium and diamond backing plates was performed. The results clearly demonstrate that the use of diamond-backing plates...

  12. Channeling experiments at planar diamond and silicon single crystals with electrons from the Mainz Microtron MAMI

    Science.gov (United States)

    Backe, H.; Lauth, W.; Tran Thi, T. N.

    2018-04-01

    Line structures were observed for (110) planar channeling of electrons in a diamond single crystal even at a beam energy of 180 MeV . This observation motivated us to initiate dechanneling length measurements as function of the beam energy since the occupation of quantum states in the channeling potential is expected to enhance the dechanneling length. High energy loss signals, generated as a result of emission of a bremsstrahlung photon with about half the beam energy at channeling of 450 and 855 MeV electrons, were measured as function of the crystal thickness. The analysis required additional assumptions which were extracted from the numerical solution of the Fokker-Planck equation. Preliminary results for diamond are presented. In addition, we reanalyzed dechanneling length measurements at silicon single crystals performed previously at the Mainz Microtron MAMI at beam energies between 195 and 855 MeV from which we conclude that the quality of our experimental data set is not sufficient to derive definite conclusions on the dechanneling length. Our experimental results are below the predictions of the Fokker-Planck equation and somewhat above the results of simulation calculations of A. V. Korol and A. V. Solov'yov et al. on the basis of the MBN Explorer simulation package. We somehow conservatively conclude that the prediction of the asymptotic dechanneling length on the basis of the Fokker-Planck equation represents an upper limit.

  13. Wetting of the diamond surface

    International Nuclear Information System (INIS)

    Hansen, J.O.

    1987-01-01

    The surface conditions which lead to a wide variation in the wettability of diamond surfaces have been investigated using macroscopic surfaces to allow for the crystal anisotropy. A wetting balance method of calculating adhesion tension and hence contact angle has been used for diamonds having major faces near the [111] and [110] lattice planes. Three classes of behaviour have been identified. Surface analyses by Rutherford Backscattering of helium ions, X-ray Photoelectron Spectroscopy and Low Energy Electron Diffraction (LEED) have been used to define the role of the oxygen coverage of the surface in the transition I → O → H. Ferric ion has a hydrophilizing effect on the diamond surface, thought to be the consequence of attachment to the hydroxyl groups at the surface by a ligand mechanism. Other transition metal ions did not show this effect. The phenomenon of hydration of the surface, i.e. progressively more hydrophilic behaviour on prolonged exposure to liquid water, has been quantified. Imbibition or water penetration at microcracks are thought unlikely, and a water cluster build-up at hydrophilic sites is thought to be the best explanation. Dynamic studies indicate little dependence of the advancing contact angle on velocity for velocities up to 10 -4 m/s, and slight dependence of the receding contact angle. Hence advancing angles by this technique are similar to equilibrated contact angles found by optical techniques, but the receding angles are lower than found by other non-dynamic measurements

  14. ATLAS diamond Beam Condition Monitor

    Energy Technology Data Exchange (ETDEWEB)

    Gorisek, A. [CERN (Switzerland)]. E-mail: andrej.gorisek@cern.ch; Cindro, V. [J. Stefan Institute (Slovenia); Dolenc, I. [J. Stefan Institute (Slovenia); Frais-Koelbl, H. [Fotec (Austria); Griesmayer, E. [Fotec (Austria); Kagan, H. [Ohio State University, OH (United States); Korpar, S. [J. Stefan Institute (Slovenia); Kramberger, G. [J. Stefan Institute (Slovenia); Mandic, I. [J. Stefan Institute (Slovenia); Meyer, M. [CERN (Switzerland); Mikuz, M. [J. Stefan Institute (Slovenia); Pernegger, H. [CERN (Switzerland); Smith, S. [Ohio State University, OH (United States); Trischuk, W. [University of Toronto (Canada); Weilhammer, P. [CERN (Switzerland); Zavrtanik, M. [J. Stefan Institute (Slovenia)

    2007-03-01

    The ATLAS experiment has chosen to use diamond for its Beam Condition Monitor (BCM) given its radiation hardness, low capacitance and short charge collection time. In addition, due to low leakage current diamonds do not require cooling. The ATLAS Beam Condition Monitoring system is based on single beam bunch crossing measurements rather than integrating the accumulated particle flux. Its fast electronics will allow separation of LHC collisions from background events such as beam gas interactions or beam accidents. There will be two stations placed symmetrically about the interaction point along the beam axis at z=+/-183.8cm. Timing of signals from the two stations will provide almost ideal separation of beam-beam interactions and background events. The ATLAS BCM module consists of diamond pad detectors of 1cm{sup 2} area and 500{mu}m thickness coupled to a two-stage RF current amplifier. The production of the final detector modules is almost done. A S/N ratio of 10:1 has been achieved with minimum ionizing particles (MIPs) in the test beam setup at KEK. Results from the test beams and bench measurements are presented.

  15. ATLAS diamond Beam Condition Monitor

    International Nuclear Information System (INIS)

    Gorisek, A.; Cindro, V.; Dolenc, I.; Frais-Koelbl, H.; Griesmayer, E.; Kagan, H.; Korpar, S.; Kramberger, G.; Mandic, I.; Meyer, M.; Mikuz, M.; Pernegger, H.; Smith, S.; Trischuk, W.; Weilhammer, P.; Zavrtanik, M.

    2007-01-01

    The ATLAS experiment has chosen to use diamond for its Beam Condition Monitor (BCM) given its radiation hardness, low capacitance and short charge collection time. In addition, due to low leakage current diamonds do not require cooling. The ATLAS Beam Condition Monitoring system is based on single beam bunch crossing measurements rather than integrating the accumulated particle flux. Its fast electronics will allow separation of LHC collisions from background events such as beam gas interactions or beam accidents. There will be two stations placed symmetrically about the interaction point along the beam axis at z=+/-183.8cm. Timing of signals from the two stations will provide almost ideal separation of beam-beam interactions and background events. The ATLAS BCM module consists of diamond pad detectors of 1cm 2 area and 500μm thickness coupled to a two-stage RF current amplifier. The production of the final detector modules is almost done. A S/N ratio of 10:1 has been achieved with minimum ionizing particles (MIPs) in the test beam setup at KEK. Results from the test beams and bench measurements are presented

  16. Status of diamond particle detectors

    Energy Technology Data Exchange (ETDEWEB)

    Krammer, M.; Adam, W.; Friedl, M.; Hrubec, J.; Pernegger, H.; Pernicka, M. [Institut fuer Hochenergiephysik der Oesterr. Akademie d. Wissenschaften, Nikolsdorferg. 18, A-1050 Vienna (Austria); Bauer, C. [MPI fuer Kernphysik, D-69029 Heidelberg (Germany); Berdermann, E.; Stelzer, H. [GSI, Darmstadt (Germany); Bogani, F. [LENS, Florence (Italy); Borchi, E.; Bruzzi, M.; Sciortino, S. [University of Florence, Florence (Italy); Colledani, C.; Dulinski, W.; Husson, D.; LeNormand, F.; Riester, G.L.; Turchetta, R. [LEPSI, CRN Strasbourg (France); Conway, J.; Fish, D.; Schnetzer, S.; Stone, R.; Tesarek, R.; Thomson, G.B.; Walsh, A.M. [Rutgers University, Piscataway, NJ (United States); Dabrowski, W.; Kaplon, J.; Meier, D.; Roe, S.; Rudge, A.; Wedenig, R.; Weilhammer, P. [CERN, CH-1211 Geneva (Switzerland); Delpierre, P.; Hallewell, G. [CPPM, Marseille (France); Deneuville, A.; Cheeraert, E. [LEPES, Grenoble (France); Eijk, B.V.; Hartjes, F. [NIKHEF, Amsterdam (Netherlands); Fallou, A. [CPPM, Marseille (France); Foulon, F. [Centre d' Etudes de Saclay, 91191 Gif-Sur-Yvette (France); Gan, K.K.; Kagan, H.; Kass, R.; Trawick, M.; Zoeller, M. [The Ohio State University, Columbus, OH (United States); Grigoriev, E.; Knoepfle, K.T. [MPI fuer Kernphysik, D-69029 Heidelberg (Germany); Hall-Wilton, R. [Bristol University, Bristol (United Kingdom); Han, S.; Ziock, H. [Los Alamos National Laboratory, Research Division, Los Alamos, NM (United States); Kania, D. [Lawrence Livermore National Laboratory, Livermore, CA (United States); Manfredi, P.F.; Re, V.; Speziali, V. [Universita di Pavia, Dipartimento di Elettronica, 27100 Pavia (Italy); Mishina, M. [FNAL, Batavia, IL (United States); Pan, L.S. [Sandia National Laboratory, Albuquerque, NM (United States); Roff, D.; Tapper, R.J. [Bristol University, Bristol (United Kingdom); Trischuk, W. [University of Toronto, Toronto (Canada)

    1998-11-21

    To continue the exciting research in the field of particle physics new accelerators and experiments are under construction. In some of these experiments, e.g. ATLAS and CMS at the Large Hadron Collider at CERN or HERA-B at DESY, the detectors have to withstand an extreme environment. The detectors must be radiation hard, provide a very fast signal, and be as thin as possible. The properties of CVD diamond allow to fulfill these requirements and make it an ideal material for the detectors close to the interaction region of these experiments, i.e. the vertex detectors or the inner trackers. The RD42 collaboration is developing diamond detectors for these applications. The program of RD42 includes the improvement of the charge collection properties of CVD diamond, the study of the radiation hardness and the development of low-noise radiation hard readout electronics. An overview of the progress achieved during the last years will be given. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)

  17. Status of diamond particle detectors

    International Nuclear Information System (INIS)

    Krammer, M.; Adam, W.; Friedl, M.; Hrubec, J.; Pernegger, H.; Pernicka, M.; Bauer, C.; Berdermann, E.; Stelzer, H.; Bogani, F.; Borchi, E.; Bruzzi, M.; Sciortino, S.; Colledani, C.; Dulinski, W.; Husson, D.; LeNormand, F.; Riester, G.L.; Turchetta, R.; Conway, J.; Fish, D.; Schnetzer, S.; Stone, R.; Tesarek, R.; Thomson, G.B.; Walsh, A.M.; Dabrowski, W.; Kaplon, J.; Meier, D.; Roe, S.; Rudge, A.; Wedenig, R.; Weilhammer, P.; Delpierre, P.; Hallewell, G.; Deneuville, A.; Cheeraert, E.; Eijk, B.V.; Hartjes, F.; Fallou, A.; Foulon, F.; Gan, K.K.; Kagan, H.; Kass, R.; Trawick, M.; Zoeller, M.; Grigoriev, E.; Knoepfle, K.T.; Hall-Wilton, R.; Han, S.; Ziock, H.; Kania, D.; Manfredi, P.F.; Re, V.; Speziali, V.; Mishina, M.; Pan, L.S.; Roff, D.; Tapper, R.J.; Trischuk, W.

    1998-01-01

    To continue the exciting research in the field of particle physics new accelerators and experiments are under construction. In some of these experiments, e.g. ATLAS and CMS at the Large Hadron Collider at CERN or HERA-B at DESY, the detectors have to withstand an extreme environment. The detectors must be radiation hard, provide a very fast signal, and be as thin as possible. The properties of CVD diamond allow to fulfill these requirements and make it an ideal material for the detectors close to the interaction region of these experiments, i.e. the vertex detectors or the inner trackers. The RD42 collaboration is developing diamond detectors for these applications. The program of RD42 includes the improvement of the charge collection properties of CVD diamond, the study of the radiation hardness and the development of low-noise radiation hard readout electronics. An overview of the progress achieved during the last years will be given. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)

  18. ATLAS diamond Beam Condition Monitor

    CERN Document Server

    Gorišek, A; Dolenc, I; Frais-Kölbl, H; Griesmayer, E; Kagan, H; Korpar, S; Kramberger, G; Mandic, I; Meyer, M; Mikuz, M; Pernegger, H; Smith, S; Trischuk, W; Weilhammer, P; Zavrtanik, M

    2007-01-01

    The ATLAS experiment has chosen to use diamond for its Beam Condition Monitor (BCM) given its radiation hardness, low capacitance and short charge collection time. In addition, due to low leakage current diamonds do not require cooling. The ATLAS Beam Condition Monitoring system is based on single beam bunch crossing measurements rather than integrating the accumulated particle flux. Its fast electronics will allow separation of LHC collisions from background events such as beam gas interactions or beam accidents. There will be two stations placed symmetrically about the interaction point along the beam axis at . Timing of signals from the two stations will provide almost ideal separation of beam–beam interactions and background events. The ATLAS BCM module consists of diamond pad detectors of area and thickness coupled to a two-stage RF current amplifier. The production of the final detector modules is almost done. A S/N ratio of 10:1 has been achieved with minimum ionizing particles (MIPs) in the test bea...

  19. Direct Coating of Nanocrystalline Diamond on Steel

    Science.gov (United States)

    Tsugawa, Kazuo; Kawaki, Shyunsuke; Ishihara, Masatou; Hasegawa, Masataka

    2012-09-01

    Nanocrystalline diamond films have been successfully deposited on stainless steel substrates without any substrate pretreatments to promote diamond nucleation, including the formation of interlayers. A low-temperature growth technique, 400 °C or lower, in microwave plasma chemical vapor deposition using a surface-wave plasma has cleared up problems in diamond growth on ferrous materials, such as the surface graphitization, long incubation time, substrate softening, and poor adhesion. The deposited nanocrystalline diamond films on stainless steel exhibit good adhesion and tribological properties, such as a high wear resistance, a low friction coefficient, and a low aggression strength, at room temperature in air without lubrication.

  20. Ultimate Atomic Bling: Nanotechnology of Diamonds

    Energy Technology Data Exchange (ETDEWEB)

    Dahl, Jeremy

    2010-05-25

    Diamonds exist in all sizes, from the Hope Diamond to minuscule crystals only a few atoms across. The smallest of these diamonds are created naturally by the same processes that make petroleum. Recently, researchers discovered that these 'diamondoids' are formed in many different structural shapes, and that these shapes can be used like LEGO blocks for nanotechnology. This talk will discuss the discovery of these nano-size diamonds and highlight current SLAC/Stanford research into their applications in electronics and medicine.

  1. Undoped CVD diamond films for electrochemical applications

    International Nuclear Information System (INIS)

    Mosinska, Lidia; Fabisiak, Kazimierz; Paprocki, Kazimierz; Kowalska, Magdalena; Popielarski, Pawel; Szybowicz, Miroslaw

    2013-01-01

    By using different deposition conditions, the CVD diamond films with different qualities and orientation were grown by the hot-filament CVD technique. The object of this article is to summarize and discuss relation between structural, physical and electrochemical properties of different diamond electrodes. The physical properties of the Hot Filament CVD microcrystalline diamond films are analyzed by scanning electron microscopy and Raman spectroscopy. In presented studies two different electrodes were used of the diamond grain sizes around 200 nm and 10 μm, as it was estimated from SEM picture. The diamond layers quality was checked on basis of FWHM (Full width at Half Maximum) of 1332 cm −1 diamond Raman peak. The ratio of sp 3 /sp 2 carbon bonds was determined by 1550 cm −1 G band and 1350 cm −1 D band in the Raman spectrum. The electrochemical properties were analyzed using (CV) cyclic voltammetry measurements in aqueous solutions. The sensitivity of undoped diamond electrodes depends strongly on diamond film quality and concentration of amorphous carbon phase in the diamond layer

  2. CVD diamond substrates for electronic devices

    International Nuclear Information System (INIS)

    Holzer, H.

    1996-03-01

    In this study the applicability of chemical vapor deposition (CVD) diamond as a material for heat spreaders was investigated. Economical evaluations on the production of heat spreaders were also performed. For the diamond synthesis the hot-filament and microwave method were used respectively. The deposition parameters were varied in a way that free standing diamond layers with a thickness of 80 to 750 microns and different qualities were obtained. The influence of the deposition parameters on the relevant film properties was investigated and discussed. With both the hot-filament and microwave method it was possible to deposit diamond layers having a thermal conductivity exceeding 1200 W/mK and therefore to reach the quality level for commercial uses. The electrical resistivity was greater than 10 12 Ωcm. The investigation of the optical properties was done by Raman-, IR- and cathodoluminescence spectroscopy. Because of future applications of diamond-aluminium nitride composites as highly efficient heat spreaders diamond deposition an AIN was investigated. An improved substrate pretreatment prior to diamond deposition showed promising results for better performance of such composite heat spreaders. Both free standing layers and diamond-AIN composites could be cut by a CO2 Laser in Order to get an exact size geometry. A reduction of the diamond surface roughness was achieved by etching with manganese powder or cerium. (author)

  3. Investigation of defects in electron-irradiated diamond of the type Ia by positron annihilation

    International Nuclear Information System (INIS)

    Novikov, N.V.; Ositinskaya, T.D.; Mikhalenkov, V.S.; Chernyashevskij, A.V.; Shakhovtsov, V.I.; AN Ukrainskoj SSR, Kiev; AN Ukrainskoj SSR, Kiev

    1997-01-01

    To produce vacancy defects, type Ia diamond was irradiated with 3.5 MeV electrons at doses of 5 centre dot 10 16 , 2 centre dot 10 17 , 4 centre dot 10 17 , and 2 centre dot 10 18 e/cm -2 . After each dose, the specimen was investigated using positron annihilation (ACAR), optical spectroscopy in IR, visible regions, and EPR. From ACAR spectra, the S-parameters were found and positron trapping rates were determined. Their behaviour with increasing irradiation doses shows that, in type Ia diamond along with neutral vacancies V degree, deeper traps of positrons are formed, which are most likely vacancies in the negative charge state V - . Specific trapping rates of the V 0 and V - defects are found to be 1.3 centre dot 10 15 and 3.8 centre dot 10 15 s -1 , respectively; trapping cross sections for these defects are also estimated

  4. First neutron spectroscopy measurements with a pixelated diamond detector at JET

    Energy Technology Data Exchange (ETDEWEB)

    Muraro, A., E-mail: muraro@ifp.cnr.it; Giacomelli, L.; Grosso, G.; Tardocchi, M. [Istituto di Fisica del Plasma “P. Caldirola,” CNR, Milano (Italy); Nocente, M.; Rebai, M.; Rigamonti, D.; Gorini, G. [Istituto di Fisica del Plasma “P. Caldirola,” CNR, Milano (Italy); University of Milano Bicocca, Piazza della Scienza 3, 20126 Milano (Italy); Belli, F. [Centro Ricerca ENEA-Frascati, Via E.Fermi 45, Frascati, Rome (Italy); Calvani, P.; Girolami, M.; Trucchi, D. M. [CNR—Istituto di Struttura della Materia (ISM), Via Salaria km 29.300, 00015 Monterotondo Scalo, Rome (Italy); Figueiredo, J. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Lisbon (Portugal); EUROfusion Programme Management Unit, Culham Science Centre, Abingdon (United Kingdom); Murari, A. [Culham Centre for Fusion Energy, Culham (United Kingdom); Consorzio RFX (CNR, ENEA, INFN, Università di Padova, Acciaierie Venete SpA), Padova (Italy); Popovichev, S. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Lisbon (Portugal); Collaboration: EUROfusion Consortium, JET, Culham Science Centre, Abingdon OX14 3DB (United Kingdom)

    2016-11-15

    A prototype Single crystal Diamond Detector (SDD) was installed at the Joint European Torus (JET) in 2013 along an oblique line of sight and demonstrated the possibility to carry out neutron spectroscopy measurements with good energy resolution and detector stability in discharges heated by neutral beam injection and radio-frequency waves. Starting from these positive results, within the Vertical Neutron Spectrometer project of the Joint European Torus, we have developed a pixelated instrument consisting of a matrix of 12 independent SDDs, called the Diamond Vertical Neutron Spectrometer (DVNS), which boosts the detection efficiency of a single SDD by an order of magnitude. In this paper we describe the main features of the DVNS, including the detector design, energy resolution, and data acquisition system for on-line processing. Preliminary spectroscopy measurements of 2.5 MeV neutrons from the present deuterium plasma at JET are finally presented.

  5. High energy P implants in silicon

    International Nuclear Information System (INIS)

    Raineri, V.; Cacciato, A.; Benyaich, F.; Priolo, F.; Rimini, E.; Galvagno, G.; Capizzi, S.

    1992-01-01

    Phosphorus ions in the energy range 0.25-1 MeV and in the dose range 2x10 13 -1x10 15 P/cm 2 were implanted into (100) Si single crystal at different tilt angles. In particular channeling and random conditions were investigated. For comparison some implants were performed on samples with a 2 μm thick surface amorphous layer. Chemical concentration P profiles were obtained by secondary ion mass spectrometry. Carrier concentration and mobility profile measurements were carried out by sheet resistance and Hall measurements on implanted van der Pauw patterns. Carrier concentration profiles were also obtained by spreading resistance (SR) measurements. The damage in the as-implanted samples was determined by backscattering and channeling spectrometry (RBS) as a function of the dose and implantation energy. Comparison of random implants in crystal with implants in amorphous layers shows that in the first case it is impossible to completely avoid the channeling tail. In the implants performed under channeling conditions at low doses the P profiles are flat over more than 2 μm thick layers. Furthermore, by increasing the implanted dose, the shape of the profiles dramatically changes due to the dechanneling caused by the crystal disorder. The data are discussed and compared with Monte Carlo simulations using the MARLOWE code. A simple description of the electronic energy loss provides an excellent agreement between the calculated and experimental profiles. (orig.)

  6. Carbon and nitrogen in Type 2 supernova diamonds

    Science.gov (United States)

    Clayton, Donald D.; Eleid, Mounib; Brown, Lawrence E.

    1993-03-01

    Abundant diamonds found in meteorites seem either to have condensed within supernova interiors during their expansions and coolings or to have been present around those explosions. Either alternative allows implantation of Xe-HL prior to interstellar mixing. A puzzling feature is the near normalcy of the carbon isotopes, considering that the only C-rich matter, the He-burning shell, is pure C-12 in that region. That last fact has caused many to associate supernova carbon with C-12 carbon, so that its SUNOCONS have been anticipated as very C-12-rich. We show that this expectation is misleading because the C-13-rich regions of Type 2's have been largely overlooked in this thinking. We here follow the idea that the diamonds nucleated in the C-12-rich He shell, the only C-rich site for nucleation, but then attached C-13-rich carbon during turbulent encounters with overlying C-13-rich matter. That is, the initial diamonds continued to grow during the same collisional encounters that cause the Xe-HL implantation. Instead of interacting with the small carbon mass having 13/12 = 0.2 in the upper He zone, however, we have calculated the remnants of the initial H-burning core, which left behind C-13-rich matter as it receded during core hydrogen burning. Howard et al. described why the velocity mixing would be essential to understanding the implantation of both the Xe-H and Xe-L components. Velocity mixing is now known to occur from the X-ray and gamma-ray light curves of supernova 1987A. Using the stellar evolution code developed at Goettingen, we calculated at Clemson the evolution of a grid of massive stars up to the beginning of core He burning. We paid attention to all H-burning reactions throughout the star, to the treatment of both convection and semiconvection, and to the recession of the outer boundary of the convective H-burning core as the star expands toward a larger redder state. This program was to generate a careful map of the CNO isotope distribution as He

  7. Ion implantation

    International Nuclear Information System (INIS)

    Johnson, E.

    1986-01-01

    It is the purpose of the present paper to give a review of surface alloy processing by ion implantation. However, rather than covering this vast subject as a whole, the survey is confined to a presentation of the microstructures that can be found in metal surfaces after ion implantation. The presentation is limited to alloys processed by ion implantation proper, that is to processes in which the alloy compositions are altered significantly by direct injection of the implanted ions. The review is introduced by a presentation of the processes taking place during development of the fundamental event in ion implantation - the collision cascade, followed by a summary of the various microstructures which can be formed after ion implantation into metals. This is compared with the variability of microstructures that can be achieved by rapid solidification processing. The microstructures are subsequently discussed in the light of the processes which, as the implantations proceed, take place during and immediately after formation of the individual collision cascades. These collision cascades define the volumes inside which individual ions are slowed down in the implanted targets. They are not only centres for vigorous agitation but also the sources for formation of excess concentrations of point defects, which will influence development of particular microstructures. A final section presents a selection of specific structures which have been observed in different alloy systems. (orig./GSCH)

  8. Diamond Growth in the Subduction Factory

    Science.gov (United States)

    Bureau, H.; Frost, D. J.; Bolfan-Casanova, N.; Leroy, C.; Estève, I.

    2014-12-01

    Natural diamonds are fabulous probes of the deep Earth Interior. They are the evidence of the deep storage of volatile elements, carbon at first, but also hydrogen and chlorine trapped as hydrous fluids in inclusions. The study of diamond growth processes in the lithosphere and mantle helps for our understanding of volatile elements cycling between deep reservoirs. We know now that inclusion-bearing diamonds similar to diamonds found in nature (i.e. polycrystalline, fibrous and coated diamonds) can grow in hydrous fluids or melts (Bureau et al., GCA 77, 202-214, 2012). Therefore, we propose that the best environment to promote such diamonds is the subduction factory, where highly hydrous fluids or melts are present. When oceanic plates are subducted in the lithosphere, they carry an oceanic crust soaked with seawater. While the slabs are traveling en route to the mantle, dehydration processes generate saline fluids highly concentrated in NaCl. In the present study we have experimentally shown that diamonds can grow from the saline fluids (up to 30 g/l NaCl in water) generated in subducted slabs. We have performed multi-anvil press experiments at 6-7 GPa and from 1300 to 1400°C during 6:00 hours to 30:00 hours. We observed large areas of new diamond grown in epitaxy on pure diamond seeds in salty hydrous carbonated melts, forming coated gems. The new rims are containing multi-component primary inclusions. Detailed characterizations of the diamonds and their inclusions have been performed and will be presented. These experimental results suggest that multi-component salty fluids of supercritical nature migrate with the slabs, down to the deep mantle. Such fluids may insure the first stage of the deep Earth's volatiles cycling (C, H, halogen elements) en route to the transition zone and the lower mantle. We suggest that the subduction factory may also be a diamond factory.

  9. Characterization of a diamond detector to be used as neutron yield monitor during the in-vessel calibration of JET neutron detectors in preparation of the DT experiment

    International Nuclear Information System (INIS)

    Pillon, Mario; Angelone, Maurizio; Batistoni, Paola; Loreti, Stefano; Milocco, Alberto

    2016-01-01

    Highlights: • A diamond detector has been characterized for use as neutron yield monitor of a portable 14 MeV neutron generator. • The system will be used for the 14 MeV calibration of JET neutron detector. • The results and the performances of the monitor are very satisfactory in term of accuracy and reliability. - Abstract: A new Deuterium-Tritium (DT) campaign is planned at JET. An accurate calibration for the 14 MeV neutron yield monitors is necessary. In order to perform the calibration a 14 MeV Neutron Generator with suitable intensity (∼10 8 n/s) will be used. Due to the intensity change during the Neutron Generator lifetime it would be necessary to monitor continuously the neutron emission intensity during the calibration using a compact detector attached to it. A high quality diamond detector has been chosen as one of the monitors. This detector has been fully characterized at the 14 MeV Frascati Neutron Generator facility. The characterization procedure and the resulting 14 MeV neutron response of the detector are described in this paper together with the obtained uncertainties.

  10. Diamond film growth with modification properties of adhesion between substrate and diamond film

    Directory of Open Access Journals (Sweden)

    Setasuwon P.

    2004-03-01

    Full Text Available Diamond film growth was studied using chemical vapor deposition (CVD. A special equipment was build in-house, employing a welding torch, and substrate holder with a water-cooling system. Acetylene and oxygen were used as combustion gases and the substrate was tungsten carbide cobalt. It was found that surface treatments, such as diamond powder scratching or acid etching, increase the adhesion and prevent the film peel-off. Diamond powder scratching and combined diamond powder scratching with acid etching gave the similar diamond film structure with small grain and slightly rough surface. The diamond film obtained with both treatments has high adhesion and can withstand internal stress better than ones obtained by untreated surface or acid etching alone. It was also found that higher substrate temperature produced smoother surface and more uniform diamond grain.

  11. Robust diamond meshes with unique wettability properties.

    Science.gov (United States)

    Yang, Yizhou; Li, Hongdong; Cheng, Shaoheng; Zou, Guangtian; Wang, Chuanxi; Lin, Quan

    2014-03-18

    Robust diamond meshes with excellent superhydrophobic and superoleophilic properties have been fabricated. Superhydrophobicity is observed for water with varying pH from 1 to 14 with good recyclability. Reversible superhydrophobicity and hydrophilicity can be easily controlled. The diamond meshes show highly efficient water-oil separation and water pH droplet transference.

  12. Conflict diamonds — unfinished business | IDRC - International ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    2011-07-22

    Jul 22, 2011 ... ... diamonds reached this year will not be effective if it is not monitored, and if the countries ... What we do know is that 75 percent of the world's gem diamonds are mined in ... It makes the Kimberley accord weaker than any other international ... a British NGO, have been nominated for the Nobel Peace Prize.

  13. Chemical vapor deposition of nanocrystalline diamond films

    International Nuclear Information System (INIS)

    Vyrovets, I.I.; Gritsyna, V.I.; Dudnik, S.F.; Opalev, O.A.; Reshetnyak, O.M.; Strel'nitskij, V.E.

    2008-01-01

    The brief review of the literature is devoted to synthesis of nanocrystalline diamond films. It is shown that the CVD method is an effective way for deposition of such nanostructures. The basic technological methods that allow limit the size of growing diamond crystallites in the film are studied.

  14. CVD diamond pixel detectors for LHC experiments

    CERN Document Server

    Wedenig, R; Bauer, C; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Procario, M; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Runólfsson, O; Russ, J; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trawick, M L; Trischuk, W; Vittone, E; Wagner, A; Walsh, A M; Weilhammer, Peter; White, C; Zeuner, W; Ziock, H J; Zöller, M

    1999-01-01

    This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described. (9 refs).

  15. CVD diamond pixel detectors for LHC experiments

    Energy Technology Data Exchange (ETDEWEB)

    Wedenig, R.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; Blanquart, L.; Breugnion, P.; Charles, E.; Ciocio, A.; Clemens, J.C.; Dao, K.; Einsweiler, K.; Fasching, D.; Fischer, P.; Joshi, A.; Keil, M.; Klasen, V.; Kleinfelder, S.; Laugier, D.; Meuser, S.; Milgrome, O.; Mouthuy, T.; Richardson, J.; Sinervo, P.; Treis, J.; Wermes, N

    1999-08-01

    This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described.

  16. CVD diamond pixel detectors for LHC experiments

    International Nuclear Information System (INIS)

    Wedenig, R.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; Blanquart, L.; Breugnion, P.; Charles, E.; Ciocio, A.; Clemens, J.C.; Dao, K.; Einsweiler, K.; Fasching, D.; Fischer, P.; Joshi, A.; Keil, M.; Klasen, V.; Kleinfelder, S.; Laugier, D.; Meuser, S.; Milgrome, O.; Mouthuy, T.; Richardson, J.; Sinervo, P.; Treis, J.; Wermes, N.

    1999-01-01

    This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described

  17. The Returns on Investment Grade Diamonds

    NARCIS (Netherlands)

    Renneboog, L.D.R.

    2013-01-01

    Abstract: This paper examines the risk-return characteristics of investment grade gems (white diamonds, colored diamonds and other types of gems including sapphires, rubies, and emeralds). The transactions are coming from gem auctions and span the period 1999-2012. Over our time frame, the annual

  18. Bending diamonds by femtosecond laser ablation

    DEFF Research Database (Denmark)

    Balling, Peter; Esberg, Jakob; Kirsebom, Kim

    2009-01-01

    We present a new method based on femtosecond laser ablation for the fabrication of statically bent diamond crystals. Using this method, curvature radii of 1 m can easily be achieved, and the curvature obtained is very uniform. Since diamond is extremely tolerant to high radiation doses, partly due...

  19. Controlling Directional Liquid Motion on Micro- and Nanocrystalline Diamond/β-SiC Composite Gradient Films.

    Science.gov (United States)

    Wang, Tao; Handschuh-Wang, Stephan; Huang, Lei; Zhang, Lei; Jiang, Xin; Kong, Tiantian; Zhang, Wenjun; Lee, Chun-Sing; Zhou, Xuechang; Tang, Yongbing

    2018-01-30

    In this Article, we report the synthesis of micro- and nanocrystalline diamond/β-SiC composite gradient films, using a hot filament chemical vapor deposition (HFCVD) technique and its application as a robust and chemically inert means to actuate water and hazardous liquids. As revealed by scanning electron microscopy, the composition of the surface changed gradually from pure nanocrystalline diamond (hydrophobic) to a nanocrystalline β-SiC surface (hydrophilic). Transmission electron microscopy and Raman spectroscopy were employed to determine the presence of diamond, graphite, and β-SiC phases. The as-prepared gradient films were evaluated for their ability to actuate water. Indeed, water was transported via the gradient from the hydrophobic (hydrogen-terminated diamond) to the hydrophilic side (hydroxyl-terminated β-SiC) of the gradient surface. The driving distance and velocity of water is pivotally influenced by the surface roughness. The nanogradient surface showed significant promise as the lower roughness combined with the longer gradient yields in transport distances of up to 3.7 mm, with a maximum droplet velocity of nearly 250 mm/s measured by a high-speed camera. As diamond and β-SiC are chemically inert, the gradient surfaces can be used to drive hazardous liquids and reactive mixtures, which was signified by the actuation of hydrochloric acid and sodium hydroxide solution. We envision that the diamond/β-SiC gradient surface has high potential as an actuator for water transport in microfluidic devices, DNA sensors, and implants, which induce guided cell growth.

  20. Energy gap and surface structure of superconducting diamond films probed by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Nishizaki, Terukazu; Takano, Yoshihiko; Nagao, Masanori; Takenouchi, Tomohiro; Kawarada, Hiroshi; Kobayashi, Norio

    2007-01-01

    We have performed scanning tunneling microscopy/spectroscopy (STM/STS) experiments on (1 1 1)-oriented epitaxial films of heavily boron-doped diamond at T = 0.47 K. The STM topography shows two kinds of atomic structures: a hydrogenated 1 x 1 structure, C(1 1 1)1 x 1:H, and an amorphous structure. On the C(1 1 1)1 x 1:H region, the tunneling spectra show superconducting property with the energy gap Δ = 0.83 meV. The obtained gap ratio 2Δ/k B T c = 3.57 is consistent with the weak-coupling BCS theory

  1. High-Resolution Energy and Intensity Measurements with CVD Diamond at REX-ISOLDE

    CERN Document Server

    Griesmayer, E; Dobos, D; Wenander, F; Bergoz, J; Bayle, H; Frais-Kölbl, H; Leinweber, J; Aumeyr, T; CERN. Geneva. BE Department

    2009-01-01

    A novel beam instrumentation device for the HIE-REX (High In-tensity and Energy REX) upgrade has been developed and tested at the On-Line Isotope Mass Separator ISOLDE, located at the European Laboratory for Particle Physics (CERN). This device is based on CVD diamond detector technology and is used for measuring the beam intensity, particle counting and measuring the energy spectrum of the beam. An energy resolution of 0.6% was measured at a carbon ion energy of 22.8 MeV. This corresponds to an energy spread of ± 140 keV.

  2. Diamond sensors for future high energy experiments

    Energy Technology Data Exchange (ETDEWEB)

    Bachmair, Felix, E-mail: bachmair@phys.ethz.ch

    2016-09-21

    With the planned upgrade of the LHC to High-Luminosity-LHC [1], the general purpose experiments ATLAS and CMS are planning to upgrade their innermost tracking layers with more radiation tolerant technologies. Chemical Vapor Deposition CVD diamond is one such technology. CVD diamond sensors are an established technology as beam condition monitors in the highest radiation areas of all LHC experiments. The RD42-collaboration at CERN is leading the effort to use CVD diamond as a material for tracking detectors operating in extreme radiation environments. An overview of the latest developments from RD42 is presented including the present status of diamond sensor production, a study of pulse height dependencies on incident particle flux and the development of 3D diamond sensors.

  3. Diamond electrophoretic microchips-Joule heating effects

    International Nuclear Information System (INIS)

    Karczemska, Anna T.; Witkowski, Dariusz; Ralchenko, Victor; Bolshakov, Andrey; Sovyk, Dmitry; Lysko, Jan M.; Fijalkowski, Mateusz; Bodzenta, Jerzy; Hassard, John

    2011-01-01

    Microchip electrophoresis (MCE) has become a mature separation technique in the recent years. In the presented research, a polycrystalline diamond electrophoretic microchip was manufactured with a microwave plasma chemical vapour deposition (MPCVD) method. A replica technique (mould method) was used to manufacture microstructures in diamond. A numerical analysis with CoventorWare TM was used to compare thermal properties during chip electrophoresis of diamond and glass microchips of the same geometries. Temperature distributions in microchips were demonstrated. Thermal, electrical, optical, chemical and mechanical parameters of the polycrystalline diamond layers are advantageous over traditionally used materials for microfluidic devices. Especially, a very high thermal conductivity coefficient gives a possibility of very efficient dissipation of Joule heat from the diamond electrophoretic microchip. This enables manufacturing of a new generation of microdevices.

  4. Engineering NV centres in Synthetic Diamond

    International Nuclear Information System (INIS)

    Matthew Markham

    2014-01-01

    The quantum properties of the nitrogen vacancy (NV) centre in diamond has prompted rapid growth in diamond research. This initial growth was driven by the fact the NV centre provides an 'easy' to manipulate quantum system along with opening up the possibility of a new material to deliver a solid state quantum computer. The NV defect is now moving from a quantum curiosity to a commercial development platform for a range of application such as as gyroscopes, timing and magnetometry as well as the more traditional quantum technologies such as quantum encryption and quantum simulation. These technologies are pushing the development needs of the material, and the processing of that material. The paper will describes the advances in CVD diamond synthesis with special attention to getting NV defects close to the surface of the diamond and how to process the material for diamond quantum optical applications. (author)

  5. Diamond detector technology: status and perspectives

    CERN Document Server

    Kagan, Harris; Artuso, M; Bachmair, F; Bäni, L; Bartosik, M; Beacham, J; Beck, H P; Bellini,, V; Belyaev, V; Bentele, B; Berdermann, E; Bergonzo, P; Bes, A; Brom, J-M; Bruzzi, M; Cerv, M; Chiodini, G; Chren, D; Cindro, V; Claus, G; Collot, J; Cumalat, J; Dabrowski, A; D'Alessandro, R; De Boer, W; Dehning, B; Dorfer, C; Dunser, M; Eremin, V; Eusebi, R; Forcolin, G; Forneris, J; Frais-Kölbl, H; Gan, K K; Gastal, M; Giroletti, C; Goffe, M; Goldstein, J; Golubev, A; Gorišek, A; Grigoriev, E; Grosse-Knetter, J; Grummer, A; Gui, B; Guthoff, M; Haughton, I; Hiti, B; Hits, D; Hoeferkamp, M; Hofmann, T; Hosslet, J; Hostachy, J-Y; Hügging, F; Hutton, C; Jansen, H; Janssen, J; Kanxheri, K; Kasieczka, G; Kass, R; Kassel, F; Kis, M; Kramberger, G; Kuleshov, S; Lacoste, A; Lagomarsino, S; Lo Giudice, A; Lukosi, E; Maazouzi, C; Mandic, I; Mathieu, C; Mcfadden, N; Menichelli, M; Mikuž, M; Morozzi, A; Moss, J; Mountain, R; Murphy, S; Muškinja, M; Oh, A; Oliviero, P; Passeri, D; Pernegger, H; Perrino, R; Picollo, F; Pomorski, M; Potenza, R; Quadt, A; Re, A; Reichmann, M; Riley, G; Roe, S; Sanz, D; Scaringella, M; Schaefer, D; Schmidt, C J; Schnetzer, S; Schreiner, T; Sciortino, S; Scorzoni, A; Seidel, S; Servoli, L; Sopko, B; Sopko, V; Spagnolo, S; Spanier, S; Stenson, K; Stone, R; Sutera, C; Taylor, Aaron; Traeger, M; Tromson, D; Trischuk, W; Tuve, C; Uplegger, L; Velthuis, J; Venturi, N; Vittone, E; Wagner, Stephen; Wallny, R; Wang, J C; Weingarten, J; Weiss, C; Wengler, T; Wermes, N; Yamouni, M; Zavrtanik, M

    2017-01-01

    The status of material development of poly-crystalline chemical vapor deposition (CVD) diamond is presented. We also present beam test results on the independence of signal size on incident par-ticle rate in charged particle detectors based on un-irradiated and irradiated poly-crystalline CVD diamond over a range of particle fluxes from 2 kHz/cm2 to 10 MHz/cm2. The pulse height of the sensors was measured with readout electronics with a peaking time of 6 ns. In addition the first beam test results from 3D detectors made with poly-crystalline CVD diamond are presented. Finally the first analysis of LHC data from the ATLAS Diamond Beam Monitor (DBM) which is based on pixelated poly-crystalline CVD diamond sensors bump-bonded to pixel readout elec-tronics is shown.

  6. Nanostructured Diamond Device for Biomedical Applications.

    Science.gov (United States)

    Fijalkowski, M; Karczemska, A; Lysko, J M; Zybala, R; KozaneckI, M; Filipczak, P; Ralchenko, V; Walock, M; Stanishevsky, A; Mitura, S

    2015-02-01

    Diamond is increasingly used in biomedical applications because of its unique properties such as the highest thermal conductivity, good optical properties, high electrical breakdown voltage as well as excellent biocompatibility and chemical resistance. Diamond has also been introduced as an excellent substrate to make the functional microchip structures for electrophoresis, which is the most popular separation technique for the determination of analytes. In this investigation, a diamond electrophoretic chip was manufactured by a replica method using a silicon mold. A polycrystalline 300 micron-thick diamond layer was grown by the microwave plasma-assisted CVD (MPCVD) technique onto a patterned silicon substrate followed by the removal of the substrate. The geometry of microstructure, chemical composition, thermal and optical properties of the resulting free-standing diamond electrophoretic microchip structure were examined by CLSM, SFE, UV-Vis, Raman, XRD and X-ray Photoelectron Spectroscopy, and by a modified laser flash method for thermal property measurements.

  7. Diamond electrophoretic microchips-Joule heating effects

    Energy Technology Data Exchange (ETDEWEB)

    Karczemska, Anna T., E-mail: anna.karczemska@p.lodz.pl [Technical University of Lodz, Institute of Turbomachinery, 219/223 Wolczanska str., Lodz (Poland); Witkowski, Dariusz [Technical University of Lodz, Institute of Turbomachinery, 219/223 Wolczanska str., Lodz (Poland); Ralchenko, Victor, E-mail: ralchenko@nsc.gpi.ru [General Physics Institute, Russian Academy of Science, 38 Vavilov str., Moscow (Russian Federation); Bolshakov, Andrey; Sovyk, Dmitry [General Physics Institute, Russian Academy of Science, 38 Vavilov str., Moscow (Russian Federation); Lysko, Jan M., E-mail: jmlysko@ite.waw.pl [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Fijalkowski, Mateusz, E-mail: petr.louda@vslib.cz [Technical University of Liberec, Faculty of Mechanical Engineering (Czech Republic); Bodzenta, Jerzy, E-mail: jerzy.bodzenta@polsl.pl [Silesian University of Technology, Institute of Physics, 2 Krzywoustego str., 44-100 Gliwice (Poland); Hassard, John, E-mail: j.hassard@imperial.ac.uk [Imperial College of Science, Technology and Medicine, London (United Kingdom)

    2011-03-15

    Microchip electrophoresis (MCE) has become a mature separation technique in the recent years. In the presented research, a polycrystalline diamond electrophoretic microchip was manufactured with a microwave plasma chemical vapour deposition (MPCVD) method. A replica technique (mould method) was used to manufacture microstructures in diamond. A numerical analysis with CoventorWare{sup TM} was used to compare thermal properties during chip electrophoresis of diamond and glass microchips of the same geometries. Temperature distributions in microchips were demonstrated. Thermal, electrical, optical, chemical and mechanical parameters of the polycrystalline diamond layers are advantageous over traditionally used materials for microfluidic devices. Especially, a very high thermal conductivity coefficient gives a possibility of very efficient dissipation of Joule heat from the diamond electrophoretic microchip. This enables manufacturing of a new generation of microdevices.

  8. Very bright, near-infrared single photon emitters in diamond

    Directory of Open Access Journals (Sweden)

    D. W. M. Lau

    2013-09-01

    Full Text Available We demonstrate activation of bright diamond single photon emitters in the near infrared range by thermal annealing alone, i.e., without ion implantation. The activation is crucially dependent on the annealing ambient. The activation of the single photon emitters is only observed when the sample is annealed in forming gas (4% H2 in Ar above temperatures of 1000 °C. By contrast, no emitters are activated by annealing in vacuum, oxygen, argon or deuterium. The emitters activated by annealing in forming gas exhibit very bright emission in the 730-760 nm wavelength range and have linewidths of ∼1.5-2.5 nm at room temperature.

  9. Shock compression of diamond crystal

    OpenAIRE

    Kondo, Ken-ichi; Ahrens, Thomas J.

    1983-01-01

    Two shock wave experiments employing inclined mirrors have been carried out to determine the Hugoniot elastic limit (HEL), final shock state at 191 and 217 GPa, and the post-shock state of diamond crystal, which is shock-compressed along the intermediate direction between the and crystallographic axes. The HEL wave has a velocity of 19.9 ± 0.3 mm/µsec and an amplitude of 63 ± 28 GPa. An alternate interpretation of the inclined wedge mirror streak record suggests a ramp precursor wave and th...

  10. Toroidal plasma enhanced CVD of diamond films

    International Nuclear Information System (INIS)

    Zvanya, John; Cullen, Christopher; Morris, Thomas; Krchnavek, Robert R.; Holber, William; Basnett, Andrew; Basnett, Robert; Hettinger, Jeffrey

    2014-01-01

    An inductively coupled toroidal plasma source is used as an alternative to microwave plasmas for chemical vapor deposition of diamond films. The source, operating at a frequency of 400 kHz, synthesizes diamond films from a mixture of argon, methane, and hydrogen. The toroidal design has been adapted to create a highly efficient environment for diamond film deposition: high gas temperature and a short distance from the sample to the plasma core. Using a toroidal plasma geometry operating in the medium frequency band allows for efficient (≈90%) coupling of AC line power to the plasma and a scalable path to high-power and large-area operation. In test runs, the source generates a high flux of atomic hydrogen over a large area, which is favorable for diamond film growth. Using a deposition temperature of 900–1050 °C and a source to sample distance of 0.1–2.0 cm, diamond films are deposited onto silicon substrates. The results showed that the deposition rate of the diamond films could be controlled using the sample temperature and source to sample spacing. The results also show the films exhibit good-quality polycrystalline diamond as verified by Raman spectroscopy, x-ray diffraction, and scanning electron microscopy. The scanning electron microscopy and x-ray diffraction results show that the samples exhibit diamond (111) and diamond (022) crystallites. The Raman results show that the sp 3 peak has a narrow spectral width (FWHM 12 ± 0.5 cm −1 ) and that negligible amounts of the sp 2 band are present, indicating good-quality diamond films

  11. A Bayesian method to estimate the neutron response matrix of a single crystal CVD diamond detector

    International Nuclear Information System (INIS)

    Reginatto, Marcel; Araque, Jorge Guerrero; Nolte, Ralf; Zbořil, Miroslav; Zimbal, Andreas; Gagnon-Moisan, Francis

    2015-01-01

    Detectors made from artificial chemical vapor deposition (CVD) single crystal diamond are very promising candidates for applications where high resolution neutron spectrometry in very high neutron fluxes is required, for example in fusion research. We propose a Bayesian method to estimate the neutron response function of the detector for a continuous range of neutron energies (in our case, 10 MeV ≤ E n ≤ 16 MeV) based on a few measurements with quasi-monoenergetic neutrons. This method is needed because a complete set of measurements is not available and the alternative approach of using responses based on Monte Carlo calculations is not feasible. Our approach uses Bayesian signal-background separation techniques and radial basis function interpolation methods. We present the analysis of data measured at the PTB accelerator facility PIAF. The method is quite general and it can be applied to other particle detectors with similar characteristics

  12. Cold cathodes on ultra-dispersed diamond base

    International Nuclear Information System (INIS)

    Alimova, A.N.; Zhirnov, V.V.; Chubun, N.N.; Belobrov, P.I.

    1998-01-01

    Prospects of application of nano diamond powders for fabrication of cold cathodes are discussed.Cold cathodes based on silicon pointed structures with nano diamond coatings were prepared.The deposition technique of diamond coating was dielectrophoresis from suspension of nano diamond powder in organic liquids.The cathodes were tested in sealed prototypes of vacuum electronic devices

  13. Carmustine Implant

    Science.gov (United States)

    ... works by slowing or stopping the growth of cancer cells in your body. ... are pregnant, plan to become pregnant, or are breast-feeding. If you become pregnant while receiving carmustine implant, call your doctor. Carmustine may harm the fetus.

  14. Cochlear Implants

    Science.gov (United States)

    ... NIDCD A cochlear implant is a small, complex electronic device that can help to provide a sense ... Hearing Aids Retinitis Pigmentosa - National Eye Institute Telecommunications Relay Services Usher Syndrome Your Baby's Hearing Screening News ...

  15. The effect of dose enhancement near metal interfaces on synthetic diamond based X-ray dosimeters

    Science.gov (United States)

    Alamoudi, D.; Lohstroh, A.; Albarakaty, H.

    2017-11-01

    This study investigates the effects of dose enhancement on the photocurrent performance at metallic interfaces in synthetic diamond detectors based X-ray dosimeters as a function of bias voltages. Monte Carlo (MC) simulations with the BEAMnrc code were carried out to simulate the dose enhancement factor (DEF) and compared against the equivalent photocurrent ratio from experimental investigations. The MC simulation results show that the sensitive region for the absorbed dose distribution covers a few micrometers distances from the interface. Experimentally, two single crystals (SC) and one polycrystalline (PC) synthetic diamond samples were fabricated into detectors with carbon based electrodes by boron and carbon ion implantation. Subsequently; the samples were each mounted inside a tissue equivalent encapsulation to minimize unintended fluence perturbation. Dose enhancement was generated by placing copper, lead or gold near the active volume of the detectors using 50 kVp and 100 kVp X-rays relevant for medical dosimetry. The results show enhancement in the detectors' photocurrent performance when different metals are butted up to the diamond bulk as expected. The variation in the photocurrent measurement depends on the type of diamond samples, their electrodes' fabrication and the applied bias voltages indicating that the dose enhancement near the detector may modify their electronic performance.

  16. Microfabrication, characterization and in vivo MRI compatibility of diamond microelectrodes array for neural interfacing.

    Science.gov (United States)

    Hébert, Clément; Warnking, Jan; Depaulis, Antoine; Garçon, Laurie Amandine; Mermoux, Michel; Eon, David; Mailley, Pascal; Omnès, Franck

    2015-01-01

    Neural interfacing still requires highly stable and biocompatible materials, in particular for in vivo applications. Indeed, most of the currently used materials are degraded and/or encapsulated by the proximal tissue leading to a loss of efficiency. Here, we considered boron doped diamond microelectrodes to address this issue and we evaluated the performances of a diamond microelectrode array. We described the microfabrication process of the device and discuss its functionalities. We characterized its electrochemical performances by cyclic voltammetry and impedance spectroscopy in saline buffer and observed the typical diamond electrode electrochemical properties, wide potential window and low background current, allowing efficient electrochemical detection. The charge storage capacitance and the modulus of the electrochemical impedance were found to remain in the same range as platinum electrodes used for standard commercial devices. Finally we observed a reduced Magnetic Resonance Imaging artifact when the device was implanted on a rat cortex, suggesting that boron doped-diamond is a very promising electrode material allowing functional imaging. Copyright © 2014 Elsevier B.V. All rights reserved.

  17. Silicon diodes as an alternative to diamond detectors for depth dose curves and profile measurements of photon and electron radiation

    International Nuclear Information System (INIS)

    Scherf, Christian; Moog, Jussi; Licher, Joerg; Kara, Eugen; Roedel, Claus; Ramm, Ulla; Peter, Christiane; Zink, Klemens

    2009-01-01

    Background: Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. Material and Methods: The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm 3 thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. Results: The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm 2 because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Conclusion: Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector. (orig.)

  18. STRUCTURING OF DIAMOND FILMS USING MICROSPHERE LITHOGRAPHY

    Directory of Open Access Journals (Sweden)

    Mária Domonkos

    2014-10-01

    Full Text Available In this study, the structuring of micro- and nanocrystalline diamond thin films is demonstrated. The structuring of the diamond films is performed using the technique of microsphere lithography followed by reactive ion etching. Specifically, this paper presents a four-step fabrication process: diamond deposition (microwave plasma assisted chemical vapor deposition, mask preparation (by the standard Langmuir-Blodgett method, mask modification and diamond etching. A self-assembled monolayer of monodisperse polystyrene (PS microspheres with close-packed ordering is used as the primary template. Then the PS microspheres and the diamond films are processed in capacitively coupled radiofrequency plasma  using different plasma chemistries. This fabrication method illustrates the preparation of large arrays of periodic and homogeneous hillock-like structures. The surface morphology of processed diamond films is characterized by scanning electron microscopy and atomic force microscope. The potential applications of such diamond structures in various fields of nanotechnology are also briefly discussed.

  19. Thin diamond films for tribological applications

    International Nuclear Information System (INIS)

    Wong, M.S.; Meilunas, R.; Ong, T.P.; Chang, R.P.H.

    1989-01-01

    Diamond films have been deposited on Si, Mo and many other substrates by microwave and radio frequency plasma enhanced chemical vapor deposition. Although the adhesion between the diamond film and most of the metal substrates is poor due to residual thermal stress from the mismatch of thermal expansion coefficients, the authors have developed processes to promote the growth of uniform and continuous diamond films with enhanced adhesion to metal substrates for tribological applications. The tribological properties of these films are measured using a ring-on-block tribotester. The coefficients of friction of diamond films sliding against a 52100 steel ring under the same experimental conditions are found to be significantly different depending on the morphology, grain size and roughness of the diamond films. However, under all cases tested, it is found that for uniform and continuous diamond films with small grain size of 1-3 micrometers, the coefficient of friction of the diamond film sliding against a steel ring under lubrication of a jet of mineral oil is about 0.04

  20. CVD diamond for nuclear detection applications

    International Nuclear Information System (INIS)

    Bergonzo, P.; Brambilla, A.; Tromson, D.; Mer, C.; Guizard, B.; Marshall, R.D.; Foulon, F.

    2002-01-01

    Chemically vapour deposited (CVD) diamond is a remarkable material for the fabrication of radiation detectors. In fact, there exist several applications where other standard semiconductor detectors do not fulfil the specific requirements imposed by corrosive, hot and/or high radiation dose environments. The improvement of the electronic properties of CVD diamond has been under intensive investigations and led to the development of a few applications that are addressing specific industrial needs. Here, we report on CVD diamond-based detector developments and we describe how this material, even though of a polycrystalline nature, is readily of great interest for applications in the nuclear industry as well as for physics experiments. Improvements in the material synthesis as well as on device fabrication especially concern the synthesis of films that do not exhibit space charge build up effects which are often encountered in CVD diamond materials and that are highly detrimental for detection devices. On a pre-industrial basis, CVD diamond detectors have been fabricated for nuclear industry applications in hostile environments. Such devices can operate in harsh environments and overcome limitations encountered with the standard semiconductor materials. Of these, this paper presents devices for the monitoring of the alpha activity in corrosive nuclear waste solutions, such as those encountered in nuclear fuel assembly reprocessing facilities, as well as diamond-based thermal neutron detectors exhibiting a high neutron to gamma selectivity. All these demonstrate the effectiveness of a demanding industrial need that relies on the remarkable resilience of CVD diamond

  1. Phosphorylated nano-diamond/ Polyimide Nanocomposites

    International Nuclear Information System (INIS)

    Beyler-Çiǧil, Asli; Çakmakçi, Emrah; Kahraman, Memet Vezir

    2014-01-01

    In this study, a novel route to synthesize polyimide (PI)/phosphorylated nanodiamond films with improved thermal and mechanical properties was developed. Surface phosphorylation of nano-diamond was performed in dichloromethane. Phosphorylation dramatically enhanced the thermal stability of nano-diamond. Poly(amic acid) (PAA), which is the precursor of PI, was successfully synthesized with 3,3',4,4'-Benzophenonetetracarboxylic dianhydride (BTDA) and 4,4'-oxydianiline (4,4'-ODA) in the solution of N,N- dimethylformamide (DMF). Pure BTDA-ODA polyimide films and phosphorylated nanodiamond containing BTDA-ODA PI films were prepared. The PAA displayed good compatibility with phosphorylated nano-diamond. The morphology of the polyimide (PI)/phosphorylated nano-diamond was characterized by scanning electron microscopy (SEM). Chemical structure of polyimide and polyimide (PI)/phosphorylated nano-diamond was characterized by FTIR. SEM and FTIR results showed that the phosphorylated nano-diamond was successfully prepared. Thermal properties of the polyimide (PI)/phosphorylated nanodiamond was characterized by thermogravimetric analysis (TGA). TGA results showed that the thermal stability of (PI)/phosphorylated nano-diamond film was increased

  2. High current pelletron for ion implantation

    International Nuclear Information System (INIS)

    Schroeder, J.B.

    1989-01-01

    Since 1984, when the first production MeV ion implanter (an NEC model MV-T30) went on-line, interest in versatile electrostatic accelerator systems for MeV ion implantation has grown. The systems use a negative ion source to inject a tandem megavolt accelerator. In early systems the 0.4 mA of charging current from the two Pelletron charging chains in the accelerator was sufficient for the low intensity of beams from the ion source. This 2-chain system, however, is no longer adequate for the much higher beam intensities from today's improved ion sources. A 4-chain charging system, which delivers 1.3 mA to the high voltage terminal, was developed and is in operation in new models of NEC S Series Pelletron accelerators. This paper describes the latest beam performance of 1 MV and 1.7 MW Pelletron accelerators with this new 4-chain charging system. (orig.)

  3. Self-composite comprised of nanocrystalline diamond and a non-diamond component useful for thermoelectric applications

    Science.gov (United States)

    Gruen, Dieter M [Downers Grove, IL

    2009-08-11

    One provides nanocrystalline diamond material that comprises a plurality of substantially ordered diamond crystallites that are sized no larger than about 10 nanometers. One then disposes a non-diamond component within the nanocrystalline diamond material. By one approach this non-diamond component comprises an electrical conductor that is formed at the grain boundaries that separate the diamond crystallites from one another. The resultant nanowire is then able to exhibit a desired increase with respect to its ability to conduct electricity while also preserving the thermal conductivity behavior of the nanocrystalline diamond material.

  4. Implantation, recoil implantation, and sputtering

    International Nuclear Information System (INIS)

    Kelly, R.

    1984-01-01

    The implantation and sputtering mechanisms which are relevant to ion bombardment of surfaces are described. These are: collision, thermal, electronic and photon-induced sputtering. 135 refs.; 36 figs.; 9 tabs

  5. Diamond-Based Supercapacitors: Realization and Properties.

    Science.gov (United States)

    Gao, Fang; Nebel, Christoph E

    2016-10-26

    In this Spotlight on Applications, we describe our recent progress on the fabrication of surface-enlarged boron-doped polycrystalline diamond electrodes, and evaluate their performance in supercapacitor applications. We begin with a discussion of the fabrication methods of porous diamond materials. The diamond surface enlargement starts with a top-down plasma etching method. Although the extra surface area provided by surface roughening or nanostructuring provides good outcome for sensing applications, a capacitance value <1 mF cm -2 or a surface-enlargement factor <100 fail to meet the requirement of a practical supercapacitor. Driven by the need for large surface areas, we recently focused on the tempated-growth method. We worked on both supported and free-standing porous diamond materials to enhance the areal capacitance to the "mF cm -2 " range. With our newly developed free-standing diamond paper, areal capacitance can be multiplied by stacking multilayers of the electrode material. Finally, considering the fact that there is no real diamond-based supercapacitor device up to now, we fabricated the first prototype pouch-cell device based on the free-standing diamond paper to evaluate its performance. The results reveal that the diamond paper is suitable for operation in high potential windows (up to 2.5 V) in aqueous electrolyte with a capacitance of 0.688 mF cm -2 per layer of paper (or 0.645 F g -1 ). Impedance spectroscopy revealed that the operation frequency of the device exceeds 30 Hz. Because of the large potential window and the ability to work at high frequency, the specific power of the device reached 1 × 10 5 W kg -1 . In the end, we made estimations on the future target performance of diamond supercapacitors based on the existing information.

  6. Science and technology of biocompatible thin films for implantable biomedical devices.

    Energy Technology Data Exchange (ETDEWEB)

    Li, W.; Kabius, B.; Auciello, O.; Materials Science Division

    2010-01-01

    This presentation focuses on reviewing research to develop two critical biocompatible film technologies to enable implantable biomedical devices, namely: (1) development of bioinert/biocompatible coatings for encapsulation of Si chips implantable in the human body (e.g., retinal prosthesis implantable in the human eye) - the coating involves a novel ultrananocrystalline diamond (UNCD) film or hybrid biocompatible oxide/UNCD layered films; and (2) development of biocompatible films with high-dielectric constant and microfabrication process to produce energy storage super-capacitors embedded in the microchip to achieve full miniaturization for implantation into the human body.

  7. Diamond deposition on siliconized stainless steel

    International Nuclear Information System (INIS)

    Alvarez, F.; Reinoso, M.; Huck, H.; Rosenbusch, M.

    2010-01-01

    Silicon diffusion layers in AISI 304 and AISI 316 type stainless steels were investigated as an alternative to surface barrier coatings for diamond film growth. Uniform 2 μm thick silicon rich interlayers were obtained by coating the surface of the steels with silicon and performing diffusion treatments at 800 deg. C. Adherent diamond films with low sp 2 carbon content were deposited on the diffused silicon layers by a modified hot filament assisted chemical vapor deposition (HFCVD) method. Characterization of as-siliconized layers and diamond coatings was performed by energy dispersive X-ray analysis, scanning electron microscopy, X-ray diffraction and Raman spectroscopy.

  8. Physics and applications of CVD diamond

    CERN Document Server

    Koizumi, Satoshi; Nesladek, Milos

    2008-01-01

    Here, leading scientists report on why and how diamond can be optimized for applications in bioelectronic and electronics. They cover such topics as growth techniques, new and conventional doping mechanisms, superconductivity in diamond, and excitonic properties, while application aspects include quantum electronics at room temperature, biosensors as well as diamond nanocantilevers and SAWs.Written in a review style to make the topic accessible for a wider community of scientists working in interdisciplinary fields with backgrounds in physics, chemistry, biology and engineering, this is e

  9. Residual radioactivity of treated green diamonds.

    Science.gov (United States)

    Cassette, Philippe; Notari, Franck; Lépy, Marie-Christine; Caplan, Candice; Pierre, Sylvie; Hainschwang, Thomas; Fritsch, Emmanuel

    2017-08-01

    Treated green diamonds can show residual radioactivity, generally due to immersion in radium salts. We report various activity measurements on two radioactive diamonds. The activity was characterized by alpha and gamma ray spectrometry, and the radon emanation was measured by alpha counting of a frozen source. Even when no residual radium contamination can be identified, measurable alpha and high-energy beta emissions could be detected. The potential health impact of radioactive diamonds and their status with regard to the regulatory policy for radioactive products are discussed. Copyright © 2017. Published by Elsevier Ltd.

  10. Amorphous Diamond MEMS and Sensors

    Energy Technology Data Exchange (ETDEWEB)

    SULLIVAN, JOHN P.; FRIEDMANN, THOMAS A.; ASHBY, CAROL I.; DE BOER, MAARTEN P.; SCHUBERT, W. KENT; SHUL, RANDY J.; HOHLFELDER, ROBERT J.; LAVAN, D.A.

    2002-06-01

    This report describes a new microsystems technology for the creation of microsensors and microelectromechanical systems (MEMS) using stress-free amorphous diamond (aD) films. Stress-free aD is a new material that has mechanical properties close to that of crystalline diamond, and the material is particularly promising for the development of high sensitivity microsensors and rugged and reliable MEMS. Some of the unique properties of aD include the ability to easily tailor film stress from compressive to slightly tensile, hardness and stiffness 80-90% that of crystalline diamond, very high wear resistance, a hydrophobic surface, extreme chemical inertness, chemical compatibility with silicon, controllable electrical conductivity from insulating to conducting, and biocompatibility. A variety of MEMS structures were fabricated from this material and evaluated. These structures included electrostatically-actuated comb drives, micro-tensile test structures, singly- and doubly-clamped beams, and friction and wear test structures. It was found that surface micromachined MEMS could be fabricated in this material easily and that the hydrophobic surface of the film enabled the release of structures without the need for special drying procedures or the use of applied hydrophobic coatings. Measurements using these structures revealed that aD has a Young's modulus of {approx}650 GPa, a tensile fracture strength of 8 GPa, and a fracture toughness of 8 MPa{center_dot}m {sup 1/2}. These results suggest that this material may be suitable in applications where stiction or wear is an issue. Flexural plate wave (FPW) microsensors were also fabricated from aD. These devices use membranes of aD as thin as {approx}100 nm. The performance of the aD FPW sensors was evaluated for the detection of volatile organic compounds using ethyl cellulose as the sensor coating. For comparable membrane thicknesses, the aD sensors showed better performance than silicon nitride based sensors. Greater

  11. Study of high energy ion implantation of boron and oxygen in silicon

    International Nuclear Information System (INIS)

    Thevenin, P.

    1991-06-01

    Three aspects of high energy (0.5-3 MeV) light ions ( 11 B + and 16 O + ) implantation in silicon are examined: (1)Spatial repartition; (2) Target damage and (3) Synthesis by oxygen implantation of a buried silicon oxide layer

  12. Interaction of implanted deuterium and helium with beryllium: radiation enhanced oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Langley, R.A.

    1979-01-01

    The interaction of implanted deuterium and helium with beryllium is of significant interest in the application of first wall coatings and other components of fusion reactors. Electropolished polycrystalline beryllium was first implanted with an Xe backscatter marker at 1.98 MeV followed by either implantation with 5 keV diatomic deuterium or helium. A 2.0 MeV He beam was used to analyze for impurity buildup; namely oxygen. The oxide layer thickness was found to increase linearly with increasing implant fluence. A 2.5 MeV H/sup +/ beam was used to depth profile the D and He by ion backscattering. In addition the retention of the implant was measured as a function of the implant fluence. The mean depth of the implant was found to agree with theoretical range calculations. Scanning electron microscopy was used to observe blister formation. No blisters were observed for implanted D but for implanted He blisters occurred at approx. 1.75 x 10/sup 17/ He cm/sup -2/. The blister diameter increased with increasing implant fluence from about 0.8 ..mu..m at 10/sup 18/ He cm/sup -2/ to 5.5 ..mu..m at 3 x 10/sup 18/ He cm/sup -2/.

  13. Interaction of implanted deuterium and helium with beryllium: radiation enhanced oxidation

    International Nuclear Information System (INIS)

    Langley, R.A.

    1979-01-01

    The interaction of implanted deuterium and helium with beryllium is of significant interest in the application of first wall coatings and other components of fusion reactors. Electropolished polycrystalline beryllium was first implanted with an Xe backscatter marker at 1.98 MeV followed by either implantation with 5 keV diatomic deuterium or helium. A 2.0 MeV He beam was used to analyze for impurity buildup; namely oxygen. The oxide layer thickness was found to increase linearly with increasing implant fluence. A 2.5 MeV H + beam was used to depth profile the D and He by ion backscattering. In addition the retention of the implant was measured as a function of the implant fluence. The mean depth of the implant was found to agree with theoretical range calculations. Scanning electron microscopy was used to observe blister formation. No blisters were observed for implanted D but for implanted He blisters occurred at approx. 1.75 x 10 17 He cm -2 . The blister diameter increased with increasing implant fluence from about 0.8 μm at 10 18 He cm -2 to 5.5 μm at 3 x 10 18 He cm -2

  14. Dry And Ringer Solution Lubricated Tribology Of Thin Osseoconductive Metal Oxides And Diamond-Like Carbon Films

    Directory of Open Access Journals (Sweden)

    Waldhauser W.

    2015-09-01

    Full Text Available Achieving fast and strong adhesion to jawbone is essential for dental implants. Thin deposited films may improve osseointegration, but they are prone to cohesive and adhesive fracture due to high stresses while screwing the implant into the bone, leading to bared, less osteoconductive substrate surfaces and nano- and micro-particles in the bone. Aim of this work is the investigation of the cohesion and adhesion failure stresses of osteoconductive tantalum, titanium, silicon, zirconium and aluminium oxide and diamond-like carbon films. The tribological behaviour under dry and lubricated conditions (Ringer solution reveals best results for diamond-like carbon, while cohesion and adhesion of zirconium oxide films is highest.

  15. Evaluation of electron beam stabilization for ion implant processing

    Science.gov (United States)

    Buffat, Stephen J.; Kickel, Bee; Philipps, B.; Adams, J.; Ross, Matthew F.; Minter, Jason P.; Marlowe, Trey; Wong, Selmer S.

    1999-06-01

    With the integration of high energy ion implant processes into volume CMOS manufacturing, the need for thick resist stabilization to achieve a stable ion implant process is critical. With new photoresist characteristics, new implant end station characteristics arise. The resist outgassing needs to be addressed as well as the implant profile to ensure that the dosage is correct and the implant angle does not interfere with other underlying features. This study compares conventional deep-UV/thermal with electron beam stabilization. The electron beam system used in this study utilizes a flood electron source and is a non-thermal process. These stabilization techniques are applied to a MeV ion implant process in a CMOS production process flow.

  16. Implant Fixture Heat Transfer During Abutment Preparation.

    Science.gov (United States)

    Aleisa, Khalil; Alkeraidis, Abdullah; Al-Dwairi, Ziad Nawaf; Altahawi, Hamdi; Lynch, Edward

    2015-06-01

    The purpose of the study was to evaluate the effect of water flow rate on the heat transmission in implants during abutment preparation using a diamond bur in a high-speed dental turbine. Titanium-alloy abutments (n = 32) were connected to a titanium-alloy implant embedded in an acrylic resin within a water bath at a controlled temperature of 37°C. The specimens were equally distributed into 2 groups (16 each) according to the water flow rate used during the preparation phase. Group 1 had a water flow rate of 24 mL/min, and group 2 had a water flow rate of 40 mL/min. Each abutment was prepared in the axial plane for 1 minute and in the occlusal plane for 1 minute with a coarse tapered diamond bur using a high-speed dental handpiece. Thermocouples embedded at the cervix of the implant surface were used to record the temperature of heat transmission from the abutment preparation. Heat generation was measured at 3 distinct times (immediately and 30 seconds and 60 seconds after the end of preparation). Statistical analyses were carried out using 2-way analysis of variance and the Student t test. Water flow rates (24 mL vs 40 mL) and time interval had no statistically significant effect on the implant's temperature change during the abutment preparation stage (P = .431 and P = .064, respectively). Increasing the water flow rate from 24 to 40 mL/min had no influence on the temperature of the implant fixture recorded during preparation of the abutment.

  17. RBS/NRA/channeling analysis of implanted immiscible species

    International Nuclear Information System (INIS)

    Naramoto, H.; Yamamoto, S.; Narumi, K.

    2000-01-01

    Ion implantation of immiscible elements was performed to prepare supersaturated substance for further heat treatment. 63 Cu ion implantation was made at low temperature into Nb(1 0 0), (1 1 0) and (1 1 1) single crystal films on sapphire, and the induced lattice damage and the lattice location of implanted Cu atoms were analyzed by 2.7 MeV 4 He + RBS/channeling. The coherent segregation of 63 Cu atoms with specific crystallographic orientations was found in the near surface region (Cu(1 0 0)/Nb(1 0 0), Cu(1 1 1)/Nb(1 1 0) and Cu(1 1 0)/Nb(1 1 1)). The same kind of study was also made in Ir(1 0 0)/MgO(1 0 0) implanted with 50 keV 12 C + ions. In addition to 2 MeV 4 He + RBS/channeling, 1.22 MeV d + RBS/NRA/channeling was employed to detect implanted 12 C atoms. The results suggest that 12 C atoms are aligned along Ir direction at least by low temperature implantation followed by thermal annealing

  18. α-emission channeling studies of the interaction of Li with defects in Si and diamond

    CERN Multimedia

    2002-01-01

    In most semiconductors Li is a fast diffusing impurity and acts as a shallow interstitial donor, i.e. Li atoms normally appear as positively charged ions located on non-substitutional lattice sites. However, due to the positive charge Li may interact with other, preferentially negatively charged, defects present in the material. The major three groups of defects where interaction with Li was observed are p-type dopants, vacancy defects and defects containing trace impurities like oxygen. Although the influence of Li on electrical or optical properties of Si was investigated extensively in the past, the microscopical structure of Li-defect complexes and the relation between structure and electronic properties is still unresolved in many cases. In diamond, Li is the only impurity to date which was found to be an interstitial donor after ion implantation. Up to now there are no systematic investigations of the behavior of Li in diamond.\\\\ ...

  19. ULTRAFINE FLUORESCENT DIAMONDS IN NANOTECHNOLOGY

    Directory of Open Access Journals (Sweden)

    Kanyuk M. I.

    2014-07-01

    Full Text Available The purpose of the work is to summarize the literature data concerning ultrafine diamonds, namely their industrial production, as well as considerable photostability and biocompatibility that promote their use in modern visualization techniques. It is shown that due to the unique physical properties, they are promising materials for using in nanotechnology in the near future. Possibility of diverse surface modification, small size and large absorption surface are the basis for their use in different approaches for drug and gene delivery into a cell. The changes in the properties of nanodiamond surface modification methods of their creation, stabilization and applications are described. It can be said that fluorescent surface-modified nanodiamonds are a promising target in various research methods that would be widely used for labeling of living cells, as well as in the processes of genes and drugs delivery into a cell.

  20. Hip Implant Systems

    Science.gov (United States)

    ... Implants and Prosthetics Metal-on-Metal Hip Implants Hip Implants Share Tweet Linkedin Pin it More sharing options Linkedin Pin it Email Print Hip implants are medical devices intended to restore mobility ...

  1. Breast reconstruction - implants

    Science.gov (United States)

    Breast implants surgery; Mastectomy - breast reconstruction with implants; Breast cancer - breast reconstruction with implants ... harder to find a tumor if your breast cancer comes back. Getting breast implants does not take as long as breast reconstruction ...

  2. Astronomers debate diamonds in space

    Science.gov (United States)

    1999-04-01

    This is not the first time the intriguing carbonaceous compound has been detected in space. A peculiar elite of twelve stars are known to produce it. The star now added by ISO to this elite is one of the best representatives of this exclusive family, since it emits a very strong signal of the compound. Additionally ISO found a second new member of the group with weaker emission, and also observed with a spectral resolution never achieved before other already known stars in this class. Astronomers think these ISO results will help solve the mystery of the true nature of the compound. Their publication by two different groups, from Spain and Canada, has triggered a debate on the topic, both in astronomy institutes and in chemistry laboratories. At present, mixed teams of astrophysicists and chemists are investigating in the lab compounds whose chemical signature or "fingerprint" matches that detected by ISO. Neither diamonds nor fullerenes have ever been detected in space, but their presence has been predicted. Tiny diamonds of pre-solar origin --older than the Solar System-- have been found in meteorites, which supports the as yet unconfirmed theory of their presence in interstellar space. The fullerene molecule, made of 60 carbon atoms linked to form a sphere (hence the name "buckyball"), has also been extensively searched for in space but never found. If the carbonaceous compound detected by ISO is a fullerene or a diamond, there will be new data on the production of these industrially interesting materials. Fullerenes are being investigated as "capsules" to deliver new pharmaceuticals to the body. Diamonds are commonly used in the electronics industry and for the development of new materials; if they are formed in the dust surrounding some stars, at relatively low temperatures and conditions of low pressure, companies could learn more about the ideal physical conditions to produce them. A textbook case The latest star in which the compound has been found is

  3. Ultra-fast calculations using diamond

    NARCIS (Netherlands)

    Van Dijk, T.

    2011-01-01

    TU Delft researchers have managed to use a piece of diamond to hold four quantum bits that can be spun, flipped and entangled with each other. This is an important step towards a working quantum computer

  4. Short-range order in irradiated diamonds

    International Nuclear Information System (INIS)

    Agafonov, S.S.; Glazkov, V.P.; Nikolaenko, V.A.; Somenkov, V.A.

    2005-01-01

    Structural changes in irradiated diamond with a change in its density were studied. Natural diamond powders with average particle size from 14-20 μm to 0.5 mm, irradiated in beryllium block of the MR reactor up to a fluence of 1.51 x 10 21 were used as samples. Using the neutron-diffraction method, it has been established that, when density in irradiated diamonds varies, a transition from a diamond-like amorphous structure to a graphite-like structure occurs. The transition occurs at a density ρ ∼ 2.7-2.9 g/cm 3 and is accompanied by a sharp change in resistivity [ru

  5. Single-Crystal Diamond Nanobeam Waveguide Optomechanics

    Science.gov (United States)

    Khanaliloo, Behzad; Jayakumar, Harishankar; Hryciw, Aaron C.; Lake, David P.; Kaviani, Hamidreza; Barclay, Paul E.

    2015-10-01

    Single-crystal diamond optomechanical devices have the potential to enable fundamental studies and technologies coupling mechanical vibrations to both light and electronic quantum systems. Here, we demonstrate a single-crystal diamond optomechanical system and show that it allows excitation of diamond mechanical resonances into self-oscillations with amplitude >200 nm . The resulting internal stress field is predicted to allow driving of electron spin transitions of diamond nitrogen-vacancy centers. The mechanical resonances have a quality factor >7 ×105 and can be tuned via nonlinear frequency renormalization, while the optomechanical interface has a 150 nm bandwidth and 9.5 fm /√{Hz } sensitivity. In combination, these features make this system a promising platform for interfacing light, nanomechanics, and electron spins.

  6. Single-Crystal Diamond Nanobeam Waveguide Optomechanics

    Directory of Open Access Journals (Sweden)

    Behzad Khanaliloo

    2015-12-01

    Full Text Available Single-crystal diamond optomechanical devices have the potential to enable fundamental studies and technologies coupling mechanical vibrations to both light and electronic quantum systems. Here, we demonstrate a single-crystal diamond optomechanical system and show that it allows excitation of diamond mechanical resonances into self-oscillations with amplitude >200  nm. The resulting internal stress field is predicted to allow driving of electron spin transitions of diamond nitrogen-vacancy centers. The mechanical resonances have a quality factor >7×10^{5} and can be tuned via nonlinear frequency renormalization, while the optomechanical interface has a 150 nm bandwidth and 9.5  fm/sqrt[Hz] sensitivity. In combination, these features make this system a promising platform for interfacing light, nanomechanics, and electron spins.

  7. CVD diamond for nuclear detection applications

    CERN Document Server

    Bergonzo, P; Tromson, D; Mer, C; Guizard, B; Marshall, R D; Foulon, F

    2002-01-01

    Chemically vapour deposited (CVD) diamond is a remarkable material for the fabrication of radiation detectors. In fact, there exist several applications where other standard semiconductor detectors do not fulfil the specific requirements imposed by corrosive, hot and/or high radiation dose environments. The improvement of the electronic properties of CVD diamond has been under intensive investigations and led to the development of a few applications that are addressing specific industrial needs. Here, we report on CVD diamond-based detector developments and we describe how this material, even though of a polycrystalline nature, is readily of great interest for applications in the nuclear industry as well as for physics experiments. Improvements in the material synthesis as well as on device fabrication especially concern the synthesis of films that do not exhibit space charge build up effects which are often encountered in CVD diamond materials and that are highly detrimental for detection devices. On a pre-i...

  8. Diamond detectors for high energy physics experiments

    Science.gov (United States)

    Bäni, L.; Alexopoulos, A.; Artuso, M.; Bachmair, F.; Bartosik, M.; Beacham, J.; Beck, H.; Bellini, V.; Belyaev, V.; Bentele, B.; Berdermann, E.; Bergonzo, P.; Bes, A.; Brom, J.-M.; Bruzzi, M.; Cerv, M.; Chiodini, G.; Chren, D.; Cindro, V.; Claus, G.; Collot, J.; Cumalat, J.; Dabrowski, A.; D'Alessandro, R.; Dauvergne, D.; de Boer, W.; Dorfer, C.; Dünser, M.; Eremin, V.; Eusebi, R.; Forcolin, G.; Forneris, J.; Frais-Kölbl, H.; Gallin-Martel, L.; Gallin-Martel, M. L.; Gan, K. K.; Gastal, M.; Giroletti, C.; Goffe, M.; Goldstein, J.; Golubev, A.; Gorišek, A.; Grigoriev, E.; Grosse-Knetter, J.; Grummer, A.; Gui, B.; Guthoff, M.; Haughton, I.; Hiti, B.; Hits, D.; Hoeferkamp, M.; Hofmann, T.; Hosslet, J.; Hostachy, J.-Y.; Hügging, F.; Hutton, C.; Jansen, H.; Janssen, J.; Kagan, H.; Kanxheri, K.; Kasieczka, G.; Kass, R.; Kassel, F.; Kis, M.; Konovalov, V.; Kramberger, G.; Kuleshov, S.; Lacoste, A.; Lagomarsino, S.; Lo Giudice, A.; Lukosi, E.; Maazouzi, C.; Mandic, I.; Mathieu, C.; Menichelli, M.; Mikuž, M.; Morozzi, A.; Moss, J.; Mountain, R.; Murphy, S.; Muškinja, M.; Oh, A.; Oliviero, P.; Passeri, D.; Pernegger, H.; Perrino, R.; Picollo, F.; Pomorski, M.; Potenza, R.; Quadt, A.; Re, A.; Reichmann, M.; Riley, G.; Roe, S.; Sanz, D.; Scaringella, M.; Schaefer, D.; Schmidt, C. J.; Schnetzer, S.; Sciortino, S.; Scorzoni, A.; Seidel, S.; Servoli, L.; Smith, S.; Sopko, B.; Sopko, V.; Spagnolo, S.; Spanier, S.; Stenson, K.; Stone, R.; Sutera, C.; Tannenwald, B.; Taylor, A.; Traeger, M.; Tromson, D.; Trischuk, W.; Tuve, C.; Uplegger, L.; Velthuis, J.; Venturi, N.; Vittone, E.; Wagner, S.; Wallny, R.; Wang, J. C.; Weingarten, J.; Weiss, C.; Wengler, T.; Wermes, N.; Yamouni, M.; Zavrtanik, M.

    2018-01-01

    Beam test results of the radiation tolerance study of chemical vapour deposition (CVD) diamond against different particle species and energies is presented. We also present beam test results on the independence of signal size on incident particle rate in charged particle detectors based on un-irradiated and irradiated poly-crystalline CVD diamond over a range of particle fluxes from 2 kHz/cm2 to 10 MHz/cm2. The pulse height of the sensors was measured with readout electronics with a peaking time of 6 ns. In addition functionality of poly-crystalline CVD diamond 3D devices was demonstrated in beam tests and 3D diamond detectors are shown to be a promising technology for applications in future high luminosity experiments.

  9. Diamond Detector Technology: Status and Perspectives

    CERN Document Server

    Reichmann, M; Artuso, M; Bachmair, F; Bäni, L; Bartosik, M; Beacham, J; Beck, H; Bellini, V; Belyaev, V; Bentele, B; Berdermann, E; Bergonzo, P; Bes, A; Brom, J-M; Bruzzi, M; Cerv, M; Chiodini, G; Chren, D; Cindro, V; Claus, G; Collot, J; Cumalat, J; Dabrowski, A; D'Alessandro, R; Dauvergne, D; de Boer, W; Dorfer, C; Dünser, M; Eremin, V; Eusebi, R; Forcolin, G; Forneris, J; Frais-Kölbl, H; Gallin-Martel, L; Gallin-Martel, M L; Gan, K K; Gastal, M; Giroletti, C; Goffe, M; Goldstein, J; Golubev, A; Gorišek, A; Grigoriev, E; Grosse-Knetter, J; Grummer, A; Gui, B; Guthoff, M; Haughton, I; Hiti, B; Hits, D; Hoeferkamp, M; Hofmann, T; Hosslet, J; Hostachy, J-Y; Hügging, F; Hutton, C; Jansen, H; Janssen, J; Kagan, H; Kanxheri, K; Kasieczka, G; Kass, R; Kassel, F; Kis, M; Konovalov, V; Kramberger, G; Kuleshov, S; Lacoste, A; Lagomarsino, S; Lo Giudice, A; Lukosi, E; Maazouzi, C; Mandic, I; Mathieu, C; Menichelli, M; Mikuž, M; Morozzi, A; Moss, J; Mountain, R; Murphy, S; Muškinja, M; Oh, A; Oliviero, P; Passeri, D; Pernegger, H; Perrino, R; Picollo, F; Pomorski, M; Potenza, R; Quadt, A; Re, A; Riley, G; Roe, S; Sanz-Becerra, D A; Scaringella, M; Schaefer, D; Schmidt, C J; Schnetzer, S; Sciortino, S; Scorzoni, A; Seidel, S; Servoli, L; Smith, S; Sopko, B; Sopko, V; Spagnolo, S; Spanier, S; Stenson, K; Stone, R; Sutera, C; Tannenwald, B; Taylor, A; Traeger, M; Tromson, D; Trischuk, W; Tuve, C; Uplegger, L; Velthuis, J; Venturi, N; Vittone, E; Wagner, S; Wallny, R; Wang, J C; Weingarten, J; Weiss, C; Wengler, T; Wermes, N; Yamouni, M; Zavrtanik, M

    2018-01-01

    The planned upgrade of the LHC to the High-Luminosity-LHC will push the luminosity limits above the original design values. Since the current detectors will not be able to cope with this environment ATLAS and CMS are doing research to find more radiation tolerant technologies for their innermost tracking layers. Chemical Vapour Deposition (CVD) diamond is an excellent candidate for this purpose. Detectors out of this material are already established in the highest irradiation regimes for the beam condition monitors at LHC. The RD42 collaboration is leading an effort to use CVD diamonds also as sensor material for the future tracking detectors. The signal behaviour of highly irradiated diamonds is presented as well as the recent study of the signal dependence on incident particle flux. There is also a recent development towards 3D detectors and especially 3D detectors with a pixel readout based on diamond sensors.

  10. Modified diamond dies for laser applications

    Energy Technology Data Exchange (ETDEWEB)

    McWilliams, R.A.

    1978-06-21

    A modified wire drawing die for spatial filtering techniques is described. It was designed for use in high power laser systems. The diamond aperture is capable of enduring high intensity laser frequency without damaging the laser beam profile. The diamond is mounted at the beam focus in a vacuum of 1 x 10/sup -5/ Torr. The vacuum prevents plasma forming at the diamond aperture, thus enabling the beam to pass through without damaging the holder or aperture. The spatial filters are fitted with a manipulator that has three electronic stepping motors, can position the aperture in three orthogonal directions, and is capable of 3.2 ..mu..m resolution. Shiva laser system is using 105 diamond apertures for shaping the High Energy Laser Beam.

  11. The DIAMOND Model of Peace Support Operations

    National Research Council Canada - National Science Library

    Bailey, Peter

    2005-01-01

    DIAMOND (Diplomatic And Military Operations in a Non-warfighting Domain) is a high-level stochastic simulation developed at Dstl as a key centerpiece within the Peace Support Operations (PSO) 'modelling jigsaw...

  12. A beam radiation monitor based on CVD diamonds for SuperB

    Science.gov (United States)

    Cardarelli, R.; Di Ciaccio, A.

    2013-08-01

    Chemical Vapor Deposition (CVD) diamond particle detectors are in use in the CERN experiments at LHC and at particle accelerator laboratories in Europe, USA and Japan mainly as beam monitors. Nowadays it is considered a proven technology with a very fast signal read-out and a very high radiation tolerance suitable for measurements in high radiation environment zones i.e. near the accelerators beam pipes. The specific properties of CVD diamonds make them a prime candidate for measuring single particles as well as high-intensity particle cascades, for timing measurements on the sub-nanosecond scale and for beam protection systems in hostile environments. A single-crystalline CVD (scCVD) diamond sensor, read out with a new generation of fast and high transition frequency SiGe bipolar transistor amplifiers, has been tested for an application as radiation monitor to safeguard the silicon vertex tracker in the SuperB detector from excessive radiation damage, cumulative dose and instantaneous dose rates. Test results with 5.5 MeV alpha particles from a 241Am radioactive source and from electrons from a 90Sr radioactive source are presented in this paper.

  13. Polycrystalline Diamond Schottky Diodes and Their Applications.

    Science.gov (United States)

    Zhao, Ganming

    In this work, four-hot-filament CVD techniques for in situ boron doped diamond synthesis on silicon substrates were extensively studied. A novel tungsten filament shape and arrangement used to obtain large-area, uniform, boron doped polycrystalline diamond thin films. Both the experimental results and radiative heat transfer analysis showed that this technique improved the uniformity of the substrate temperature. XRD, Raman and SEM studies indicate that large area, uniform, high quality polycrystalline diamond films were obtained. Schottky diodes were fabricated by either sputter deposition of silver or thermal evaporation of aluminum or gold, on boron doped diamond thin films. High forward current density and a high forward-to-reverse current ratio were exhibited by silver on diamond Schottky diodes. Schottky barrier heights and the majority carrier concentrations of both aluminum and gold contacted diodes were determined from the C-V measurements. Furthermore, a novel theoretical C-V-f analysis of deep level boron doped diamond Schottky diodes was performed. The analytical results agree well with the experimental results. Compressive stress was found to have a large effect on the forward biased I-V characteristics of the diamond Schottky diodes, whereas the effect on the reverse biased characteristics was relatively small. The stress effect on the forward biased diamond Schottky diode was attributed to piezojunction and piezoresistance effects. The measured force sensitivity of the diode was as high as 0.75 V/N at 1 mA forward bias. This result shows that CVD diamond device has potential for mechanical transducer applications. The quantitative photoresponse characteristics of the diodes were studied in the spectral range of 300 -1050 nm. Semi-transparent gold contacts were used for better photoresponse. Quantum efficiency as high as 50% was obtained at 500 nm, when a reverse bias of over 1 volt was applied. The Schottky barrier heights between either gold or

  14. Growth and optical spectroscopy of synthetic diamonds

    International Nuclear Information System (INIS)

    Mudryj, A.V.; Larionova, T.P.; Shakin, I.A.; Gysakov, G.A.; Dubrov, G.A.; Tikhonov, V.V.

    2003-01-01

    It is studied the growth and optical properties of synthetic diamonds, which may be used for detection of ionizing radiation, optical windows, heat removal, ultraviolet and thermo sensors, optoelectronic devices. Optical properties of diamonds (grown in different technological conditions) were studied in temperature range 78 - 300 K by means of measuring transmission in spectral band 0.2 - 25 μm, photoluminescence and registration of luminescence excitation spectra in spectral band 0.2 - 2 μm

  15. Long-term data storage in diamond

    OpenAIRE

    Dhomkar, Siddharth; Henshaw, Jacob; Jayakumar, Harishankar; Meriles, Carlos A.

    2016-01-01

    The negatively charged nitrogen vacancy (NV?) center in diamond is the focus of widespread attention for applications ranging from quantum information processing to nanoscale metrology. Although most work so far has focused on the NV? optical and spin properties, control of the charge state promises complementary opportunities. One intriguing possibility is the long-term storage of information, a notion we hereby introduce using NV-rich, type 1b diamond. As a proof of principle, we use multic...

  16. Diamond nanostructured devices for chemical sensing applications

    OpenAIRE

    Ahmad, R. K.

    2011-01-01

    Research in the area of CVD single crystal diamond plates of which only recently has been made commercially available saw significant advancements during the last decade. In parallel to that, detonation nanodiamond (DND) particles also now widely made accessible for requisition are provoking a lot of scientific investigations. The remarkable properties of diamond including its extreme hardness, low coefficient of friction, chemical inertness, biocompatibility, high thermal c...

  17. Diamond carbon sources: a comparison of carbon isotope models

    International Nuclear Information System (INIS)

    Kirkley, M.B.; Otter, M.L.; Gurney, J.J.; Hill, S.J.

    1990-01-01

    The carbon isotope compositions of approximately 500 inclusion-bearing diamonds have been determined in the past decade. 98 percent of these diamonds readily fall into two broad categories on the basis of their inclusion mineralogies and compositions. These categories are peridotitic diamonds and eclogitic diamonds. Most peridotitic diamonds have δ 13 C values between -10 and -1 permil, whereas eclogitic diamonds have δ 13 C values between -28 and +2 permil. Peridotitic diamonds may represent primordial carbon, however, it is proposed that initially inhomogeneous δ 13 C values were subsequently homogenized, e.g. during melting and convection that is postulated to have occurred during the first billion years of the earth's existence. If this is the case, then the wider range of δ 13 C values exhibited by eclogitic diamonds requires a different explanation. Both the fractionation model and the subduction model can account for the range of observed δ 13 C values in eclogitic diamonds. 16 refs., 2 figs

  18. Graphitization of diamond with a metallic coating on ferritic matrix

    International Nuclear Information System (INIS)

    Cabral, Stenio Cavalier; Oliveira, Hellen Cristine Prata de; Filgueira, Marcello

    2010-01-01

    Iron is a strong catalyst of graphitization of diamonds. This graphitization occurs mainly during the processing of composites - conventional sintering or hot pressing, and during cutting operations. Aiming to avoid or minimize this deleterious effect, there is increasing use of diamond coated with metallic materials in the production of diamond tools processed via powder metallurgy. This work studies the influence of Fe on diamond graphitization diamond-coated Ti after mixing of Fe-diamonds, hot pressing parameters were performed with 3 minutes/35MPa/900 deg C - this is the condition of pressing hot used in industry for production of diamond tools. Microstructural features were observed by SEM, diffusion of Fe in diamond was studied by EDS. Graphitization was analyzed by X-ray diffraction and Raman spectroscopy. It was found that Fe not activate graphitization on the diamond under the conditions of hot pressing. (author)

  19. Detection and analysis of diamond fingerprinting feature and its application

    Energy Technology Data Exchange (ETDEWEB)

    Li Xin; Huang Guoliang; Li Qiang; Chen Shengyi, E-mail: tshgl@tsinghua.edu.cn [Department of Biomedical Engineering, the School of Medicine, Tsinghua University, Beijing, 100084 (China)

    2011-01-01

    Before becoming a jewelry diamonds need to be carved artistically with some special geometric features as the structure of the polyhedron. There are subtle differences in the structure of this polyhedron in each diamond. With the spatial frequency spectrum analysis of diamond surface structure, we can obtain the diamond fingerprint information which represents the 'Diamond ID' and has good specificity. Based on the optical Fourier Transform spatial spectrum analysis, the fingerprinting identification of surface structure of diamond in spatial frequency domain was studied in this paper. We constructed both the completely coherent diamond fingerprinting detection system illuminated by laser and the partially coherent diamond fingerprinting detection system illuminated by led, and analyzed the effect of the coherence of light source to the diamond fingerprinting feature. We studied rotation invariance and translation invariance of the diamond fingerprinting and verified the feasibility of real-time and accurate identification of diamond fingerprint. With the profit of this work, we can provide customs, jewelers and consumers with a real-time and reliable diamonds identification instrument, which will curb diamond smuggling, theft and other crimes, and ensure the healthy development of the diamond industry.

  20. Evidence for two narrow pp resonances at 2020 MeV and 2200 MeV

    CERN Document Server

    Benkheiri, P; Bouquet, B; Briandet, P; D'Almagne, B; Dang-Vu, C; De Rosny, G; Eisenstein, B I; Ferrer, A; Fleury, P; Grossetête, B; Irwin, G; Jacholkowski, A; Lahellec, A; Nguyen, H; Petroff, P; Richard, F; Rivet, P; Roudeau, P; Rougé, A; Rumpf, M; Six, J; Thénard, J M; Treille, D; Volte, A; Yaffe, D; Yiou, T P; Yoshida, H

    1977-01-01

    From the study of the reaction pi /sup -/p to p/sub F/pp pi /sup -/ using a fast proton (p/sub F/) trigger device in the CERN Omega spectrometer, the authors find evidence for two narrow pp states produced mainly in association with a Delta degrees (1232) and a N degrees (1520). The statistical significance of each peak is greater than 6 standard deviations. Masses and natural widths of these resonances are respectively M/sub 1/=2020+or-3 MeV, Gamma /sub 1 /=24+or-12 MeV and M/sub 2/=2204+or-5 MeV, Gamma /sub 2/=16/sub -16 //sup +20/ MeV. The data are consistent with a small production of the narrow approximately 1935 MeV resonance already reported. Production cross sections for these new pp resonances are given. (8 refs).

  1. Diamond growth in oxygen-acetylene flame

    International Nuclear Information System (INIS)

    Haga, Mario S.; Nagai, Y. Ernesto; Suzuki, Carlos K.

    1995-01-01

    What was supposed to be a laboratory curiosity in the 80's, in recent years the low pressure process for the production of man-made diamond turned out to be a major target for research and development of many high-tech companies. The main reason for such an interest stems on the possibility of coating many materials with a diamond film possessing the same amazing properties of the bulk natural diamond. Polycrystalline diamond film has been deposited on Mo substrate by using oxygen-acetylene flame of a welding torch. The substrate temperature has been held constant about 700 d eg C by means of a water cooled mount designed properly. Precision flowmeters have been used to control the flow ratio oxygen/acetylene, a key parameter for the success in diamond growth. Diamond has been detected by X-ray diffraction, a fast foolproof technique for crystal identification. Another method of analysis often used in Raman spectroscopy, which is able to exhibit amorphous structure besides crystalline phase. (author)

  2. CVD diamond deposition onto dental burs

    International Nuclear Information System (INIS)

    Ali, N.; Sein, H.

    2001-01-01

    A hot-filament chemical vapor deposition (HFCVD) system has been modified to enable non-planar substrates, such as metallic wires and dental burs, to be uniformly coated with thin polycrystalline diamond films. Initially, diamond deposition was carried out on titanium and tantalum wires in order to test and optimize the system. High growth rates of the order of approx. 8 /hr were obtained when depositing diamond on titanium wires using the vertical filament arrangement. However, lower growth rates of the order of 4-5meu m/hr were obtained with diamond deposition on tantalum wires. To extend the work towards a practical biomedical application tungsten carbide dental burs were coated with diamond films. The as-grown films were found to be polycrystalline and uniform over the cutting tip. Finally, the costs relating to diamond CVD onto dental burs have been presented in this paper. The costs relating to coating different number of burs at a time and the effect of film thickness on costs have been included in this investigation. (author)

  3. Development of CVD diamond radiation detectors

    CERN Document Server

    Adam, W; Berdermann, E; Bogani, F; Borchi, E; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fisch, D; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E A; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Knöpfle, K T; Krammer, Manfred; Manfredi, P F; Meier, D; Mishina, M; Le Normand, F; Pan, L S; Pernegger, H; Pernicka, Manfred; Pirollo, S; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Turchetta, R; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zoeller, M M

    1998-01-01

    Diamond is a nearly ideal material for detecting ionizing radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow a diamond detector to be used in high ra diation, high temperature and in aggressive chemical media. We have constructed charged particle detectors using high quality CVD diamond. Characterization of the diamond samples and various detect ors are presented in terms of collection distance, $d=\\mu E \\tau$, the average distance electron-hole pairs move apart under the influence of an electric field, where $\\mu$ is the sum of carrier mo bilities, $E$ is the applied electric field, and $\\tau$ is the mobility weighted carrier lifetime. Over the last two years the collection distance increased from $\\sim$ 75 $\\mu$m to over 200 $\\mu$ m. With this high quality CVD diamond a series of micro-strip and pixel particle detectors have been constructed. These devices were tested to determine their position resolution and signal to n oise performance. Diamond detectors w...

  4. Positron acceleration to 200 MeV

    International Nuclear Information System (INIS)

    Leboutet, H.

    1983-01-01

    220 MeV is the energy that has to be obtained in routine operation. A standard 12m girder with SLED II can give 220 MeV minus a few percent due to not riding at the crest of the wave. In order to have the 200 MeV with only one girder, a klystron at full power all the time would be required - kept brand new. Then, for safety it is necessary to use two klystrons as designated in the SLC design. Having two klystrons gives freedom for the choice of the best arrangement. Since there will be excess rf power, it can be traded against higher gradient, shorter waveguides, larger apertures (lower shunt impedence)

  5. Cluster-surface interaction: from soft landing to implantation

    DEFF Research Database (Denmark)

    Popok, Vladimir; Barke, Ingo; Campbell, Eleanor E.B.

    2011-01-01

    applications of keV-energy cluster ion beams. This includes ultra-shallow doping of semiconductors and formation of ultrathin insulating layers. A few examples of MeV-energy cluster implantation, leading to the formation of nanosize hillocks or pillars on the surface as well as to local phase transitions (for...... instance, graphite-to-diamond) are also discussed. The review is finalized by an outlook on the future development of cluster beam research....

  6. Nitrogen implantation with a scanning electron microscope.

    Science.gov (United States)

    Becker, S; Raatz, N; Jankuhn, St; John, R; Meijer, J

    2018-01-08

    Established techniques for ion implantation rely on technically advanced and costly machines like particle accelerators that only few research groups possess. We report here about a new and surprisingly simple ion implantation method that is based upon a widespread laboratory instrument: The scanning electron microscope. We show that it can be utilized to ionize atoms and molecules from the restgas by collisions with electrons of the beam and subsequently accelerate and implant them into an insulating sample by the effect of a potential building up at the sample surface. Our method is demonstrated by the implantation of nitrogen ions into diamond and their subsequent conversion to nitrogen vacancy centres which can be easily measured by fluorescence confocal microscopy. To provide evidence that the observed centres are truly generated in the way we describe, we supplied a 98% isotopically enriched 15 N gas to the chamber, whose natural abundance is very low. By employing the method of optically detected magnetic resonance, we were thus able to verify that the investigated centres are actually created from the 15 N isotopes. We also show that this method is compatible with lithography techniques using e-beam resist, as demonstrated by the implantation of lines using PMMA.

  7. Development of industrial ion implantation technology

    International Nuclear Information System (INIS)

    Choi, Byung Hoh; Jung, Kee Suk; Kim, Wan; Song, Woo Sub; Hwang, Chul Kyoo

    1994-02-01

    We developed an ion implanter fitted for the treatment of 12 inch or larger wafers to make 256 or higher Mega D-Ram wafers. Design features are dual usage of gas/solid for the ion source loading, production of multi-balanced ions, and the possible oxygen ion implantation. BOSII program was used for the ion optics calculation. Beams are triangularly scanned to wafers for the even implantation by a proper magnetic field application. More than 10 mA ion current is produced. For the efficient implantation to be made, target is made to rotate with tilted angle at a displaced axis. High speed tools, diamond tools, precision dies, and razor blades were implanted and the performance was evaluated after two or three times of line application. Of those materials studied, PCB drills and end mills are on the commercial treatment stages. Industrial materials as SKD-11, WC-Co, NAK-55 was compositely treated with ion beam and coating. Resultant properties were analyzed using AES, XRD, and TEM. For the case of xenon ions, excellent TiN coating resulted and its application to microcircuit lead frame increased the performance to more than 30 percent. 94 figs, 29 pix, 19 tabs, 50 refs. (Author)

  8. Development of industrial ion implantation technology

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Byung Hoh; Jung, Kee Suk; Kim, Wan; Song, Woo Sub; Hwang, Chul Kyoo [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

    1994-02-01

    We developed an ion implanter fitted for the treatment of 12 inch or larger wafers to make 256 or higher Mega D-Ram wafers. Design features are dual usage of gas/solid for the ion source loading, production of multi-balanced ions, and the possible oxygen ion implantation. BOSII program was used for the ion optics calculation. Beams are triangularly scanned to wafers for the even implantation by a proper magnetic field application. More than 10 mA ion current is produced. For the efficient implantation to be made, target is made to rotate with tilted angle at a displaced axis. High speed tools, diamond tools, precision dies, and razor blades were implanted and the performance was evaluated after two or three times of line application. Of those materials studied, PCB drills and end mills are on the commercial treatment stages. Industrial materials as SKD-11, WC-Co, NAK-55 was compositely treated with ion beam and coating. Resultant properties were analyzed using AES, XRD, and TEM. For the case of xenon ions, excellent TiN coating resulted and its application to microcircuit lead frame increased the performance to more than 30 percent. 94 figs, 29 pix, 19 tabs, 50 refs. (Author).

  9. Buried injector logic, a vertical IIL using deep ion implantation

    NARCIS (Netherlands)

    Mouthaan, A.J.

    1987-01-01

    A vertically integrated alternative for integrated injection logic has been realized, named buried injector logic (BIL). 1 MeV ion implantations are used to create buried layers. The vertical pnp and npn transistors have thin base regions and exhibit a limited charge accumulation if a gate is

  10. Boron doped diamond electrode for the wastewater treatment

    International Nuclear Information System (INIS)

    Quiroz Alfaro, Marco Antonio; Ferro, Sergio; Martinez-Huitle, Carlos Alberto; Vong, Yunny Meas

    2006-01-01

    Electrochemical studies of diamond were started more than fifteen years ago with the first paper on diamond electrochemistry published by Pleskov. After that, work started in Japan, United States of America, France, Switzerland and other countries. Over the last few years, the number of publications has increased considerably. Diamond films have been the subject of applications and fundamental research in electrochemistry, opening up a new branch known as the electrochemistry of diamond electrodes. Here, we first present a brief history and the process of diamond film synthesis. The principal objective of this work is to summarize the most important results in the electrochemical oxidation using diamond electrodes. (author)

  11. Optimizing biosensing properties on undecylenic Acid-functionalized diamond.

    Science.gov (United States)

    Zhong, Yu Lin; Chong, Kwok Feng; May, Paul W; Chen, Zhi-Kuan; Loh, Kian Ping

    2007-05-08

    The optimization of biosensing efficiency on a diamond platform depends on the successful coupling of biomolecules on the surface, and also on effective signal transduction in the biorecognition events. In terms of biofunctionalization of diamond surfaces, surface electrochemical studies of diamond modified with undecylenic acid (UA), with and without headgroup protection, were performed. The direct photochemical coupling method employing UA was found to impart a higher density of carboxylic acid groups on the diamond surface compared to that using trifluoroethyl undecenoate (TFEU) as the protecting group during the coupling process. Non-faradic impedimetric DNA sensing revealed that lightly doped diamond gives better signal transduction sensitivity compared to highly doped diamond.

  12. Boron doped diamond electrode for the wastewater treatment

    Directory of Open Access Journals (Sweden)

    Alfaro Marco Antonio Quiroz

    2006-01-01

    Full Text Available Electrochemical studies of diamond were started more than fifteen years ago with the first paper on diamond electrochemistry published by Pleskov. After that, work started in Japan, United States of America, France, Switzerland and other countries. Over the last few years, the number of publications has increased considerably. Diamond films have been the subject of applications and fundamental research in electrochemistry, opening up a new branch known as the electrochemistry of diamond electrodes. Here, we first present a brief history and the process of diamond film synthesis. The principal objective of this work is to summarize the most important results in the electrochemical oxidation using diamond electrodes.

  13. Recognition of diamond grains on surface of fine diamond grinding wheel

    Institute of Scientific and Technical Information of China (English)

    Fengwei HUO; Zhuji JIN; Renke KANG; Dongming GUO; Chun YANG

    2008-01-01

    The accurate evaluation of grinding wheel sur-face topography, which is necessary for the investigation of the grinding principle, optimism, modeling, and simu-lation of a grinding process, significantly depends on the accurate recognition of abrasive grains from the measured wheel surface. A detailed analysis of the grain size distri-bution characteristics and grain profile wavelength of the fine diamond grinding wheel used for ultra-precision grinding is presented. The requirements of the spatial sampling interval and sampling area for instruments to measure the surface topography of a diamond grinding wheel are discussed. To recognize diamond grains, digital filtering is used to eliminate the high frequency disturb-ance from the measured 3D digital surface of the grinding wheel, the geometric features of diamond grains are then extracted from the filtered 3D digital surface, and a method based on the grain profile frequency characteris-tics, diamond grain curvature, and distance between two adjacent diamond grains is proposed. A 3D surface pro-filer based on scanning white light interferometry is used to measure the 3D surface topography of a #3000 mesh resin bonded diamond grinding wheel, and the diamond grains are then recognized from the 3D digital surface. The experimental result shows that the proposed method is reasonable and effective.

  14. Toward deep blue nano hope diamonds: heavily boron-doped diamond nanoparticles.

    Science.gov (United States)

    Heyer, Steffen; Janssen, Wiebke; Turner, Stuart; Lu, Ying-Gang; Yeap, Weng Siang; Verbeeck, Jo; Haenen, Ken; Krueger, Anke

    2014-06-24

    The production of boron-doped diamond nanoparticles enables the application of this material for a broad range of fields, such as electrochemistry, thermal management, and fundamental superconductivity research. Here we present the production of highly boron-doped diamond nanoparticles using boron-doped CVD diamond films as a starting material. In a multistep milling process followed by purification and surface oxidation we obtained diamond nanoparticles of 10-60 nm with a boron content of approximately 2.3 × 10(21) cm(-3). Aberration-corrected HRTEM reveals the presence of defects within individual diamond grains, as well as a very thin nondiamond carbon layer at the particle surface. The boron K-edge electron energy-loss near-edge fine structure demonstrates that the B atoms are tetrahedrally embedded into the diamond lattice. The boron-doped diamond nanoparticles have been used to nucleate growth of a boron-doped diamond film by CVD that does not contain an insulating seeding layer.

  15. Status and applications of diamond and diamond-like materials: An emerging technology

    Science.gov (United States)

    1990-01-01

    Recent discoveries that make possible the growth of crystalline diamond by chemical vapor deposition offer the potential for a wide variety of new applications. This report takes a broad look at the state of the technology following from these discoveries in relation to other allied materials, such as high-pressure diamond and cubic boron nitride. Most of the potential defense, space, and commercial applications are related to diamond's hardness, but some utilize other aspects such as optical or electronic properties. The growth processes are reviewed, and techniques for characterizing the resulting materials' properties are discussed. Crystalline diamond is emphasized, but other diamond-like materials (silicon carbide, amorphous carbon containing hydrogen) are also examined. Scientific, technical, and economic problem areas that could impede the rapid exploitation of these materials are identified. Recommendations are presented covering broad areas of research and development.

  16. Diamond growth on an array of seeds: The revolution of diamond production

    Energy Technology Data Exchange (ETDEWEB)

    Sung, James C. [KINIK Company, 64, Chung-San Rd., Ying-Kuo, Taipei Hsien 239, Taiwan (China) and National Taiwan University, Taipei 106, Taiwan (China) and National Taipei University of Technology, Taipei 106, Taiwan (China)]. E-mail: sung@kinik.com.tw; Sung, Michael [Massachusetts Institute of Technology, Cambridge, MA (United States); Sung, Emily [Johnson and Johnson, Freemont, CA (United States)

    2006-03-01

    The consumption of saw diamond grits is a measure of a nation's constructional activities. The per capita consumption for the world is about 0.7 carats in 2004, and in China, about 3 carats. The manufacture of large saw diamond grits requires stringent control of pressure and temperature that only a few companies can master. However, with the implementation of a novel diamond seeding technology, large saw diamond grits of extreme quality can be mass produced. With this breakthrough, the prices of saw grit will plummet in the near future that should benefit the constructional industry worldwide. Moreover, electronic or thermal grade of large diamond crystals may be produced for applications in semiconductor, electronic or optical industry.

  17. Diamond growth on an array of seeds: The revolution of diamond production

    International Nuclear Information System (INIS)

    Sung, James C.; Sung, Michael; Sung, Emily

    2006-01-01

    The consumption of saw diamond grits is a measure of a nation's constructional activities. The per capita consumption for the world is about 0.7 carats in 2004, and in China, about 3 carats. The manufacture of large saw diamond grits requires stringent control of pressure and temperature that only a few companies can master. However, with the implementation of a novel diamond seeding technology, large saw diamond grits of extreme quality can be mass produced. With this breakthrough, the prices of saw grit will plummet in the near future that should benefit the constructional industry worldwide. Moreover, electronic or thermal grade of large diamond crystals may be produced for applications in semiconductor, electronic or optical industry

  18. Plasma spraying method for forming diamond and diamond-like coatings

    Science.gov (United States)

    Holcombe, Cressie E.; Seals, Roland D.; Price, R. Eugene

    1997-01-01

    A method and composition for the deposition of a thick layer (10) of diamond or diamond-like material. The method includes high temperature processing wherein a selected composition (12) including at least glassy carbon is heated in a direct current plasma arc device to a selected temperature above the softening point, in an inert atmosphere, and is propelled to quickly quenched on a selected substrate (20). The softened or molten composition (18) crystallizes on the substrate (20) to form a thick deposition layer (10) comprising at least a diamond or diamond-like material. The selected composition (12) includes at least glassy carbon as a primary constituent (14) and may include at least one secondary constituent (16). Preferably, the secondary constituents (16) are selected from the group consisting of at least diamond powder, boron carbide (B.sub.4 C) powder and mixtures thereof.

  19. Plasma immersion ion implantation of Pebax polymer

    Energy Technology Data Exchange (ETDEWEB)

    Kondyurin, A. [Applied and Plasma Physics, School of Physics (A28), University of Sydney, Sydney, NSW 2006 (Australia)]. E-mail: kond@mailcity.com; Volodin, P. [Leibniz Institute of Polymer Research Dresden e.v., Hohe Str.6, Dresden 01069 (Germany); Weber, J. [Boston Scientific Corporation, One Scimed Place, Maple Grove, MN 55311-1566 (United States)

    2006-10-15

    Nitrogen plasma immersion ion implantation (PIII) was applied to Pebax thin films and plates using doses ranging from 5 x 10{sup 14} to 10{sup 17} ions/cm{sup 2} at applied voltages of 5, 10, 20 and 30 kV. The analysis of the Pebax structure after implantation was performed using FTIR ATR, Raman, UV-vis transmission spectra, tensile and AFM contact mode data. The carbonization and depolymerisation processes were observed in the surface layer of Pebax. It was found, that graphitic- and diamond-like structures in Pebax are formed at PIII treatment of 30 kV applied voltage. AFM measurement data showed that the hardness of the Pebax surface layer increased sharply at PIII treatment with a dose higher then 10{sup 16} ions/cm{sup 2}. The bulk mechanical properties of the Pebax film after PIII remained unchanged.

  20. Hard x-ray monochromator with milli-electron volt bandwidth for high-resolution diffraction studies of diamond crystals

    Energy Technology Data Exchange (ETDEWEB)

    Stoupin, Stanislav; Shvyd' ko, Yuri; Shu Deming; Khachatryan, Ruben; Xiao, Xianghui; DeCarlo, Francesco; Goetze, Kurt; Roberts, Timothy; Roehrig, Christian; Deriy, Alexey [Advanced Photon Source, Argonne National Laboratory, Illinois 60439 (United States)

    2012-02-15

    We report on design and performance of a high-resolution x-ray monochromator with a spectral bandwidth of {Delta}E{sub X}{approx_equal} 1.5 meV, which operates at x-ray energies in the vicinity of the backscattering (Bragg) energy E{sub H} = 13.903 keV of the (008) reflection in diamond. The monochromator is utilized for high-energy-resolution diffraction characterization of diamond crystals as elements of advanced x-ray crystal optics for synchrotrons and x-ray free-electron lasers. The monochromator and the related controls are made portable such that they can be installed and operated at any appropriate synchrotron beamline equipped with a pre-monochromator.

  1. Optical studies of high quality synthetic diamond

    International Nuclear Information System (INIS)

    Sharp, S.J.

    1999-01-01

    This thesis is concerned with the study of fundamental and defect induced optical properties of synthetic diamond grown using high pressure, high temperature (HPHT) synthesis or chemical vapour deposition (CVD). The primary technique used for investigation is cathodoluminescence (including imaging and decay-time measurements) in addition to other forms of optical spectroscopy. This thesis is timely in that the crystallinity and purity of synthetic diamond has increased ten fold over the last few years. The diamond exciton emission, which is easily quenched by the presence of defects, is studied in high quality samples in detail. In addition the ability now exists to engineer the isotopic content of synthetic diamond to a high degree of accuracy. The experimental chapters are divided as follows: Chapter 2: High resolution, low temperature spectra reveal a splitting of the free-exciton phonon recombination emission peaks and the bound-exciton zero phonon line. Included are measurements of the variation in intensity and decay-time as a function of temperature. Chapter 3: The shift in energy of the phonon-assisted free-exciton phonon replicas with isotopic content has been measured. The shift is in agreement with the results of interatomic force model for phonon scattering due to isotope disorder. Chapter 4: A study of the shift in energy with isotopic content of the diamond of the GR1 band due to the neutral vacancy has allowed a verification of the theoretical predictions due to the Jahn Teller effect. Chapter 5: The spatial distribution of the free-exciton luminescence is studied in HPHT synthetic and CVD diamond. A variation in intensity with distance from the surface is interpreted as a significant non-radiative loss of excitons to the surface. Chapter 6: The decay-times of all known self-interstitial related centres have been measured in order to calculate the concentration of these centres present in electron irradiated diamond. (author)

  2. MeV fullerene impacts on mica

    Energy Technology Data Exchange (ETDEWEB)

    Doebeli, M.; Scandella, L. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Ames, F. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    Hillock heights on mica irradiated with MeV C{sub 60} ions have been investigated systematically. Results show that the small range of secondary particles along the track plays a crucial role in defect production. (author) figs., tab., refs.

  3. <600> MeV synchro-cyclotron

    CERN Multimedia

    CERN PhotoLab

    1971-01-01

    One of the 14 pancakes of the new magnet coils for the 600 MeV synchro-cyclotron which were wound and coated with epoxy resin on the CERN site. These new coils will replace the present ones which have been in use for more than 14 years but are now showing signs of deteriorations.

  4. Diamond for Actinide Traces Detection and Spectrometry in Liquids

    International Nuclear Information System (INIS)

    Pomorski, Michal; Mer, Christine; Sanoit, Jacques-de; Tran, Thuan-Quang; Bergonzo, Philippe

    2013-06-01

    We describe here a new approach for the detection and identification of actinides (Am, Pu, Cm etc) at very low activity levels in aqueous solution. The measurement consists at first in the electro-precipitation of the actinides ions as insoluble hydroxides directly onto a boron doped nanocrystalline diamond (BNCD) electrode deposited on an α-particle detector (Si or Si-PIN diode), followed by α-particles detection using front-end nuclear electronics. After α-particles counting, spectrometry, the detector can be easily decontaminated using anodization in aqueous solution to be able to be reused at once. The detection limit of the described prototype system can be estimated as low as a few mBq=L (for one day counting) to several mBq=L for 5 h counting and currently achieved energy resolution amounts to ΔE FW HM /E α = 2.3% for pulse height spectra of 5.486 MeV α-particles emitted by 241 Am, measured directly in water. (authors)

  5. Diamond Wire Cutting of the Tokamak Fusion Test Reactor

    International Nuclear Information System (INIS)

    Keith Rule; Erik Perry; Robert Parsells

    2003-01-01

    The Tokamak Fusion Test Reactor (TFTR) is a one-of-a-kind, tritium-fueled fusion research reactor that ceased operation in April 1997. As a result, decommissioning commenced in October 1999. The 100 cubic meter volume of the donut-shaped reactor makes it the second largest fusion reactor in the world. The deuterium-tritium experiments resulted in contaminating the vacuum vessel with tritium and activating the materials with 14 MeV neutrons. The total tritium content within the vessel is in excess of 7,000 Curies, while dose rates approach 50 mRem/hr. These radiological hazards along with the size of the tokamak present a unique and challenging task for dismantling. Engineers at the Princeton Plasma Physics Laboratory (PPPL) decided to investigate an alternate, innovative approach for dismantlement of the TFTR vacuum vessel: diamond wire cutting technology. In August 1999, this technology was successfully demonstrated and evaluated on vacuum vessel surrogates. Subsequently, the technology was improved and redesigned for the actual cutting of the vacuum vessel. Ten complete cuts were performed in a 6-month period to complete the removal of this unprecedented type of DandD (Decontamination and Decommissioning) activity

  6. Potential information and stopping power from channeling in diamond

    International Nuclear Information System (INIS)

    Edge, R.D.; Derry, J.E.; Fearick, R.W.; Sellschop, J.P.F.

    1983-01-01

    When a carefully cleaned diamond crystal was bombarded with helium nuclei parallel to a low index plane, up to seven peaks in the energy spectrum of backscattered ions were seen. These arose from particles oscillating to and fro across the channel as they progressed along it. Spectra taken with ions incident in different directions in the same plane allowed both the wavelengths of the oscillations in the channel, lambda, and the stopping power within the channel to be obtained. The character of the oscillations changed as the beam deviated from exact alignment with the channel, giving the highest maximum at an angle /psi/ /SUB m/ to the channel. Calculations based on those of Barrett employing lambda, /psi/ /SUB m/, and the stopping power showed a smoother potential for the (111) planar channel, which has a larger spacing, than (100) and (110). The energy dependence of the stopping power and oscillation wavelength was also determined from 0.2 to 1.2 MeV for the (110) planar channel

  7. Self-assembling hybrid diamond-biological quantum devices

    Science.gov (United States)

    Albrecht, A.; Koplovitz, G.; Retzker, A.; Jelezko, F.; Yochelis, S.; Porath, D.; Nevo, Y.; Shoseyov, O.; Paltiel, Y.; Plenio, M. B.

    2014-09-01

    The realization of scalable arrangements of nitrogen vacancy (NV) centers in diamond remains a key challenge on the way towards efficient quantum information processing, quantum simulation and quantum sensing applications. Although technologies based on implanting NV-centers in bulk diamond crystals or hybrid device approaches have been developed, they are limited by the achievable spatial resolution and by the intricate technological complexities involved in achieving scalability. We propose and demonstrate a novel approach for creating an arrangement of NV-centers, based on the self-assembling capabilities of biological systems and their beneficial nanometer spatial resolution. Here, a self-assembled protein structure serves as a structural scaffold for surface functionalized nanodiamonds, in this way allowing for the controlled creation of NV-structures on the nanoscale and providing a new avenue towards bridging the bio-nano interface. One-, two- as well as three-dimensional structures are within the scope of biological structural assembling techniques. We realized experimentally the formation of regular structures by interconnecting nanodiamonds using biological protein scaffolds. Based on the achievable NV-center distances of 11 nm, we evaluate the expected dipolar coupling interaction with neighboring NV-centers as well as the expected decoherence time. Moreover, by exploiting these couplings, we provide a detailed theoretical analysis on the viability of multiqubit quantum operations, suggest the possibility of individual addressing based on the random distribution of the NV intrinsic symmetry axes and address the challenges posed by decoherence and imperfect couplings. We then demonstrate in the last part that our scheme allows for the high-fidelity creation of entanglement, cluster states and quantum simulation applications.

  8. Polymer tribology by combining ion implantation and radionuclide tracing

    International Nuclear Information System (INIS)

    Timmers, Heiko; Gladkis, Laura G.; Warner, Jacob A.; Byrne, Aidan P.; Grosso, Mariela F. del; Arbeitman, Claudia R.; Garcia-Bermudez, Gerardo; Geruschke, Thomas; Vianden, Reiner

    2010-01-01

    Radionuclide tracers were ion implanted with three different techniques into the ultra-high molecular weight polyethylene polymer. Tracer nuclei of 7 Be were produced with inverse kinematics via the reaction p( 7 Li, 7 Be)n and caught by polymer samples at a forward scattering angle with a maximum implantation energy of 16 MeV. For the first time, 97 Ru, 100 Pd, and, independently, 111 In have been used as radionuclide tracers in ultra-high molecular weight polyethylene. 97 Ru and 100 Pd were recoil-implanted following the fusion evaporation reactions 92 Zr( 12 C,α3n) 97 Ru and 92 Zr( 12 C,4n) 100 Pd with a maximum implantation energy of 8 MeV. 111 In ions were produced in an ion source, mass-separated and implanted at 160 keV. The tribology of implanted polymer samples was studied by tracing the radionuclide during mechanical wear. Uni-directional and bi-directional sliding apparatus with stainless steel actuators were used. Results suggest a debris exchange process as the characteristic feature of the wear-in phase. This process can establish the steady state required for a subsequently constant wear rate in agreement with Archard's equation. The nano-scale implantation of mass-separated 111 In appears best suited to the study of non-linear tribological processes during wear-in. Such non-linear processes may be expected to be important in micro- and nanomachines.

  9. The Diamond machine protection system

    International Nuclear Information System (INIS)

    Heron, M.T.; Lay, S.; Chernousko, Y.; Hamadyk, P.; Rotolo, N.

    2012-01-01

    The Diamond Light Source Machine Protection System (MPS) manages the hazards from high power photon beams and other hazards to ensure equipment protection on the booster synchrotron and storage ring. The system has a shutdown requirement, on a beam mis-steer of under 1 msec and has to manage in excess of a thousand interlocks. This is realised using a combination of bespoke hardware and programmable logic controllers. The MPS monitors a large number of interlock signals from diagnostics instrumentation, vacuum instrumentation, photon front ends and plant monitoring subsystems. Based on logic it can then remove the source of the energy to ensure protection of equipment. Depending on requirements, interlocks are managed on a Local or a Global basis. The Global system is structured as two layers, and supports fast- and slow-response-time interlock requirements. A Global MPS module takes the interlock permits for a given interlock circuit from each of the cells of the accelerator, and, subject to all interlocks being good, produces a permit to operate the source of energy: the RF amplifier for vessel protection and the PSU for magnet protection. The Local MPS module takes fast Interlock inputs from one cell of the Storage Ring or one quadrant of the Booster. Fast interlocks are those that must drop the beam in under 400 μsec (the maximum speed of the interlock) in the event of failure. EPIC provides the user interface to the MPS system

  10. Kankan diamonds (Guinea) III: δ13C and nitrogen characteristics of deep diamonds

    Science.gov (United States)

    Stachel, T.; Harris, J. W.; Aulbach, S.; Deines, P.

    Diamonds from the Kankan area in Guinea formed over a large depth profile beginning within the cratonic mantle lithosphere and extending through the asthenosphere and transition zone into the lower mantle. The carbon isotopic composition, the concentration of nitrogen impurities and the nitrogen aggregation level of diamonds representing this entire depth range have been determined. Peridotitic and eclogitic diamonds of lithospheric origin from Kankan have carbon isotopic compositions (δ13C: peridotitic -5.4 to -2.2‰ eclogitic -19.7 to -0.7‰) and nitrogen characteristics (N: peridotitic 17-648 atomic ppm; eclogitic 0-1,313 atomic ppm; aggregation from IaA to IaB) which are generally typical for diamonds of these two suites worldwide. Geothermobarometry of peridotitic and eclogitic inclusion parageneses (worldwide sources) indicates that both suites formed under very similar conditions within the cratonic lithosphere, which is not consistent with a derivation of diamonds with light carbon isotopic composition from subducted organic matter within subducting oceanic slabs. Diamonds containing majorite garnet inclusions fall to the isotopically heavy side (δ13C: -3.1‰ to +0.9‰) of the worldwide diamond population. Nitrogen contents are low (0-126 atomic ppm) and one of the two nitrogen-bearing diamonds shows such a low level of nitrogen aggregation (30% B-centre) that it cannot have been exposed to ambient temperatures of the transition zone (>=1,400 °C) for more than 0.2 Ma. This suggests rapid upward transport and formation of some Kankan diamonds pene-contemporaneous to Cretaceous kimberlite activity. Similar to these diamonds from the asthenosphere and the transition zone, lower mantle diamonds show a small shift towards isotopic heavy compositions (-6.6 to -0.5‰, mode at -3.5‰). As already observed for other mines, the nitrogen contents of lower mantle diamonds were below detection (using FTIRS). The mutual shift of sublithospheric diamonds towards

  11. Studies of ion implanted thermally oxidised chromium

    International Nuclear Information System (INIS)

    Muhl, S.

    1977-01-01

    The thermal oxidation of 99.99% pure chromium containing precise amounts of foreign elements has been studied and compared to the oxidation of pure chromium. Thirty-three foreign elements including all of the naturally occurring rare earth metals were ion implanted into chromium samples prior to oxidation at 750 0 C in oxygen. The role of radiation induced damage, inherent in this doping technique, has been studied by chromium implantations at various energies and doses. The repair of the damage has been studied by vacuum annealing at temperatures up to 800 0 C prior to oxidation. Many of the implants caused an inhibition of oxidation, the greatest being a 93% reduction for 2 x 10 16 ions/cm 2 of praseodymium. The distribution of the implant was investigated by the use of 2 MeV alpha backscattering and ion microprobe analysis. Differences in the topography and structure of the chromic oxide on and off the implanted area were studied using scanning electron and optical microscopy. X-ray diffraction analysis was used to investigate if a rare earth-chromium compound of a perovskite-type structure had been formed. Lastly, the electrical conductivity of chromic oxide on and off the implanted region was examined at low voltages. (author)

  12. Critical components for diamond-based quantum coherent devices

    International Nuclear Information System (INIS)

    Greentree, Andrew D; Olivero, Paolo; Draganski, Martin; Trajkov, Elizabeth; Rabeau, James R; Reichart, Patrick; Gibson, Brant C; Rubanov, Sergey; Huntington, Shane T; Jamieson, David N; Prawer, Steven

    2006-01-01

    The necessary elements for practical devices exploiting quantum coherence in diamond materials are summarized, and progress towards their realization documented. A brief review of future prospects for diamond-based devices is also provided

  13. Prospects for the synthesis of large single-crystal diamonds

    International Nuclear Information System (INIS)

    Khmelnitskiy, R A

    2015-01-01

    The unique properties of diamond have stimulated the study of and search for its applications in many fields, including optics, optoelectronics, electronics, biology, and electrochemistry. Whereas chemical vapor deposition allows the growth of polycrystalline diamond plates more than 200 mm in diameter, most current diamond application technologies require large-size (25 mm and more) single-crystal diamond substrates or films suitable for the photolithography process. This is quite a challenge, because the largest diamond crystals currently available are 10 mm or less in size. This review examines three promising approaches to fabricating large-size diamond single crystals: growing large-size single crystals, the deposition of heteroepitaxial diamond films on single-crystal substrates, and the preparation of composite diamond substrates. (reviews of topical problems)

  14. Architecting boron nanostructure on the diamond particle surface

    International Nuclear Information System (INIS)

    Bai, H.; Dai, D.; Yu, J.H.; Nishimura, K.; Sasaoka, S.; Jiang, N.

    2014-01-01

    The present study provides an efficient approach for nano-functionalization of diamond powders. Boron nanostructure can be grown on diamond particle entire surface by a simple heat-treatment process. After treatment, various boron nanoforms were grown on the diamond particle surface at different processing temperature. High-density boron nanowires (BNWs) grow on the diamond particle entire surface at 1333 K, while nanopillars cover diamond powders when the heat treatment process is performed at 1393 K. The influence of the pretreatment temperature on the microstructure and thermal conductivity of Cu/diamond composites were investigated. Cu/diamond composites with high thermal conductivity of 670 W (m K) −1 was obtained, which was achieved by the formation of large number of nanowires and nanopillars on the diamond particle surface.

  15. Development of diamond coated tool and its performance in ...

    Indian Academy of Sciences (India)

    Unknown

    Mechanical Engineering Department, Indian Institute of Technology, Kharagpur 721 302, India ... chemical inertness of diamond coating towards the work material, did not show any .... CVD diamond coated carbide tools, Ph D Thesis, Indian.

  16. Comparative evaluation of CVD diamond technologies

    Energy Technology Data Exchange (ETDEWEB)

    Anthony, T.R. [General Electric Corporate Research & Development Center, Schenectady, NY (United States)

    1993-01-01

    Chemical vapor deposition (CVD) of diamonds occurs from hydrogen-hydrocarbon gas mixtures in the presence of atomic hydrogen at subatmospheric pressures. Most CVD methods are based on different means of generating and transporting atomic hydrogen in a particular system. Evaluation of these different techniques involves their capital costs, material costs, energy costs, labor costs and the type and quality of diamond that they produce. Currently, there is no universal agreement on which is the best technique and technique selection has been largely driven by the professional background of the user as well as the particular application of interest. This article discusses the criteria for evaluating a process for low-pressure deposition of diamond. Next, a brief history of low-pressure diamond synthesis is reviewed. Several specific processes are addressed, including the hot filament process, hot filament electron-assisted chemical vapor deposition, and plasma generation of atomic hydrogen by glow discharge, microwave discharge, low pressure radio frequency discharge, high pressure DC discharge, high pressure microwave discharge jets, high pressure RF discharge, and high and low pressure flames. Other types of diamond deposition methods are also evaluated. 101 refs., 15 figs.

  17. Short Implants: New Horizon in Implant Dentistry.

    Science.gov (United States)

    Jain, Neha; Gulati, Manisha; Garg, Meenu; Pathak, Chetan

    2016-09-01

    The choice of implant length is an essential factor in deciding the survival rates of these implants and the overall success of the prosthesis. Placing an implant in the posterior part of the maxilla and mandible has always been very critical due to poor bone quality and quantity. Long implants can be placed in association with complex surgical procedures such as sinus lift and bone augmentation. These techniques are associated with higher cost, increased treatment time and greater morbidity. Hence, there is need for a less invasive treatment option in areas of poor bone quantity and quality. Data related to survival rates of short implants, their design and prosthetic considerations has been compiled and structured in this manuscript with emphasis on the indications, advantages of short implants and critical biomechanical factors to be taken into consideration when choosing to place them. Studies have shown that comparable success rates can be achieved with short implants as those with long implants by decreasing the lateral forces to the prosthesis, eliminating cantilevers, increasing implant surface area and improving implant to abutment connection. Short implants can be considered as an effective treatment alternative in resorbed ridges. Short implants can be considered as a viable treatment option in atrophic ridge cases in order to avoid complex surgical procedures required to place long implants. With improvement in the implant surface geometry and surface texture, there is an increase in the bone implant contact area which provides a good primary stability during osseo-integration.

  18. The Mysteries of Diamonds: Bizarre History, Amazing Properties, Unique Applications

    International Nuclear Information System (INIS)

    Kagan, Harris

    2008-01-01

    Diamonds have been a prized material throughout history. They are scarce and beautiful, wars have been fought over them, and they remain today a symbol of wealth and power. Diamonds also have exceptional physical properties which can lead to unique applications in science. There are now techniques to artificially synthesize diamonds of extraordinarily high quality. In this talk, Professor Kagan will discuss the history of diamonds, their bizarre properties, and their manufacture and use for 21st century science.

  19. Encapsulation of electroless copper patterns into diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Pimenov, S.M.; Shafeev, G.A.; Lavrischev, S.V. [General Physics Institute, Moscow (Russian Federation)] [and others

    1995-12-31

    The results are reported on encapsulating copper lines into diamond films grown by a DC plasma CVD. The process includes the steps of (i) laser activation of diamond for electroless metal plating, (ii) electroless copper deposition selectively onto the activated surface regions, and (iii) diamond regrowth on the Cu-patterned diamond films. The composition and electrical properties of the encapsulated copper lines were examined, revealing high purity and low electrical resistivity of the encapsulated electroless copper.

  20. Alluvial Diamond Resource Potential and Production Capacity Assessment of Ghana

    Science.gov (United States)

    Chirico, Peter G.; Malpeli, Katherine C.; Anum, Solomon; Phillips, Emily C.

    2010-01-01

    In May of 2000, a meeting was convened in Kimberley, South Africa, and attended by representatives of the diamond industry and leaders of African governments to develop a certification process intended to assure that rough, exported diamonds were free of conflictual concerns. This meeting was supported later in 2000 by the United Nations in a resolution adopted by the General Assembly. By 2002, the Kimberley Process Certification Scheme (KPCS) was ratified and signed by both diamond-producing and diamond-importing countries. Over 70 countries were included as members at the end of 2007. To prevent trade in 'conflict' diamonds while protecting legitimate trade, the KPCS requires that each country set up an internal system of controls to prevent conflict diamonds from entering any imported or exported shipments of rough diamonds. Every diamond or diamond shipment must be accompanied by a Kimberley Process (KP) certificate and be contained in tamper-proof packaging. The objective of this study was to assess the alluvial diamond resource endowment and current production capacity of the alluvial diamond-mining sector in Ghana. A modified volume and grade methodology was used to estimate the remaining diamond reserves within the Birim and Bonsa diamond fields. The production capacity of the sector was estimated using a formulaic expression of the number of workers reported in the sector, their productivity, and the average grade of deposits mined. This study estimates that there are approximately 91,600,000 carats of alluvial diamonds remaining in both the Birim and Bonsa diamond fields: 89,000,000 carats in the Birim and 2,600,000 carats in the Bonsa. Production capacity is calculated to be 765,000 carats per year, based on the formula used and available data on the number of workers and worker productivity. Annual production is highly dependent on the international diamond market and prices, the numbers of seasonal workers actively mining in the sector, and

  1. The Mysteries of Diamonds: Bizarre History, Amazing Properties, Unique Applications

    Energy Technology Data Exchange (ETDEWEB)

    Kagan, Harris (Ohio State University)

    2008-06-24

    Diamonds have been a prized material throughout history. They are scarce and beautiful, wars have been fought over them, and they remain today a symbol of wealth and power. Diamonds also have exceptional physical properties which can lead to unique applications in science. There are now techniques to artificially synthesize diamonds of extraordinarily high quality. In this talk, Professor Kagan will discuss the history of diamonds, their bizarre properties, and their manufacture and use for 21st century science.

  2. Measurements of pp→π+d between 398 MeV and 572 MeV

    International Nuclear Information System (INIS)

    Aebischer, D.; Favier, B.; Greeniaus, L.G.; Hess, R.; Junod, A.; Lechanoine, C.; Nikles, J.-C.; Rapin, D.; Werren, D.W.

    1976-01-01

    The reaction pp→π + d was studied at incident proton energies of 398, 455, 497, 530 and 572 MeV. Measurements of dsigma/dΩ at 455 and 572 MeV show the presence of pion d-waves in the pion-deuteron system. Asymmetry measurements yield similar conclusions. Total cross-section measurements agree with recent fits to earlier data. (Auth.)

  3. An assessment of radiotherapy dosimeters based on CVD grown diamond

    International Nuclear Information System (INIS)

    Ramkumar, S.; Buttar, C.M.; Conway, J.; Whitehead, A.J.; Sussman, R.S.; Hill, G.; Walker, S.

    2001-01-01

    Diamond is potentially a very suitable material for use as a dosimeter for radiotherapy. Its radiation hardness, the near tissue equivalence and chemical inertness are some of the characteristics of diamond, which make it well suited for its application as a dosimeter. Recent advances in the synthesis of diamond by chemical vapour deposition (CVD) technology have resulted in the improvement in the quality of material and increased its suitability for radiotherapy applications. We report in this paper, the response of prototype dosimeters based on two different types (CVD1 and CVD2) of CVD diamond to X-rays. The diamond devices were assessed for sensitivity, dependence of response on dose and dose rate, and compared with a Scanditronix silicon photon diode and a PTW natural diamond dosimeter. The diamond devices of CVD1 type showed an initial increase in response with dose, which saturates after ∼6 Gy. The diamond devices of CVD2 type had a response at low fields ( 1162.8 V/cm), the CVD2-type devices showed polarisation and dose-rate dependence. The sensitivity of the CVD diamond devices varied between 82 and 1300 nC/Gy depending upon the sample type and the applied voltage. The sensitivity of CVD diamond devices was significantly higher than that of natural diamond and silicon dosimeters. The results suggest that CVD diamond devices can be fabricated for successful use in radiotherapy applications

  4. Creep tests of AISI 316 stainless steel irradiated by alpha particles of 28 MeV

    International Nuclear Information System (INIS)

    Segura, E.; Lucki, G.

    1986-01-01

    He-embrittlement effect in AISI 316 SS type throught creep tests performed with annealed and cold worked thin specimens is analized. Measurements were carried out at 700 and 750 0 C, stress of 100 MPa in vacuum better than 10 -5 torr. The He-implantations were made with the cyclotron CV-28 IPEN-CNEN/SP. Using an alpha-particle beam of 28 MeV, with concentration of 26 appm. From the valves of rupture deformation, epsilon sub(R), and rupture time, t sub(R), it was verified that he had a great effect on the operational life and ductility of this material. (Author) [pt

  5. Implantation, recoil implantation, and sputtering

    International Nuclear Information System (INIS)

    Kelly, R.

    1984-01-01

    Underlying ion-beam modification of surfaces is the more basic subject of particle-surface interaction. The ideas can be grouped into forward and backward features, i.e. those affecting the interior of the target and those leading to particle expulsion. Forward effects include the stopping of the incident particles and the deposition of energy, both governed by integral equations which are easily set up but difficult to solve. Closely related is recoil implantation where emphasis is placed not on the stopping of the incident particles but on their interaction with target atoms with resulting implantation of these atoms. Backward effects, all of which are denoted as sputtering, are in general either of collisional, thermal, electronic, or exfoliational origin. (Auth.)

  6. Coesite inclusions in diamonds of Yakutia

    Science.gov (United States)

    Bardukhinov, L. D.; Spetsius, Z. V.; Monkhorov, R. V.

    2016-10-01

    The results of the study of diamonds with inclusions of high-pressure modification of SiO2 (coesite) by Raman spectroscopy are reported. It is established that the octahedral crystal from the Zapolyarnaya pipe is characterized by the highest residual pressure (2.7 ± 0.07 GPa). An intermediate value of this parameter (2.1 ± 0.07 GPa) was obtained for a crystal of transitional habit from the Maiskaya pipe. The minimal Raman shift was registered for coesite in diamond from the Komsomol'skaya-Magnitnaya pipe and provided a calculated residual pressure of 1.8 ± 0.03 GPa. The residual pressures for crystals from the placer deposits of the Kuoika and Bol'shaya Kuonamka rivers are 2.7 ± 0.07 and 3.1 ± 0.1 GPa, respectively. Octahedral crystals were formed in the mantle at a higher pressure than rhombododecahedral diamonds.

  7. CVD diamond detectors for ionizing radiation

    CERN Document Server

    Friedl, M; Bauer, C; Berfermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernegger, H; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zöller, M

    1999-01-01

    In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2*4 cm/sup 2/ have been grown and refined for better charge collection properties, which are measured with a beta source or in a test beam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5*10/sup 15/ cm/sup -2/ to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics. (16 refs).

  8. Recent results with CVD diamond trackers

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; White, C.; Ziock, H.; Zoeller, M

    1999-08-01

    We present recent results on the use of Chemical Vapor Deposition (CVD) diamond microstrip detectors for charged particle tracking. A series of detectors was fabricated using 1 x 1 cm{sup 2} diamonds. Good signal-to-noise ratios were observed using both slow and fast readout electronics. For slow readout electronics, 2 {mu}s shaping time, the most probable signal-to-noise ratio was 50 to 1. For fast readout electronics, 25 ns peaking time, the most probable signal-to-noise ratio was 7 to 1. Using the first 2 x 4 cm{sup 2} diamond from a production CVD reactor with slow readout electronics, the most probable signal-to-noise ratio was 23 to 1. The spatial resolution achieved for the detectors was consistent with the digital resolution expected from the detector pitch.

  9. Recent results with CVD diamond trackers

    CERN Document Server

    Adam, W; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Procario, M; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Runólfsson, O; Russ, J; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trawick, M L; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; White, C; Ziock, H J; Zöller, M

    1999-01-01

    We present recent results on the use of chemical vapor deposition (CVD) diamond microstrip detectors for charged particle tracking. A series of detectors was fabricated using 1*1 cm/sup 2/ diamonds. Good signal-to-noise ratios were observed using both slow and fast readout electronics. For slow readout electronics, 2 mu s shaping time, the most probable signal-to-noise ratio was 50 to 1. For fast readout electronics, 25 ns peaking time, the most probable signal-to-noise ratio was 7 to 1. Using the first 2*4 cm/sup 2/ diamond from a production CVD reactor with slow readout electronics, the most probable signal-to-noise ratio was 23 to 1. The spatial resolution achieved for the detectors was consistent with the digital resolution expected from the detector pitch. (6 refs).

  10. CVD diamond detectors for ionizing radiation

    Energy Technology Data Exchange (ETDEWEB)

    Friedl, M. E-mail: markus.friedl@cern.ch; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M

    1999-10-01

    In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2x4 cm{sup 2} have been grown and refined for better charge collection properties, which are measured with a {beta} source or in a test beam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5x10{sup 15} cm{sup -2} to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics. (author)

  11. CVD diamond detectors for ionizing radiation

    Science.gov (United States)

    Friedl, M.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

    1999-10-01

    In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2×4 cm2 have been grown and refined for better charge collection properties, which are measured with a β source or in a testbeam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5×10 15 cm-2 to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics.

  12. Photoluminescent properties of single crystal diamond microneedles

    Science.gov (United States)

    Malykhin, Sergey A.; Ismagilov, Rinat R.; Tuyakova, Feruza T.; Obraztsova, Ekaterina A.; Fedotov, Pavel V.; Ermakova, Anna; Siyushev, Petr; Katamadze, Konstantin G.; Jelezko, Fedor; Rakovich, Yury P.; Obraztsov, Alexander N.

    2018-01-01

    Single crystal needle-like diamonds shaped as rectangular pyramids were produced by combination of chemical vapor deposition and selective oxidation with dimensions and geometrical characteristics depending on the deposition process parameters. Photoluminescence spectra and their dependencies on wavelength of excitation radiation reveal presence of nitrogen- and silicon-vacancy color centers in the diamond crystallites. Photoluminescence spectra, intensity mapping, and fluorescence lifetime imaging microscopy indicate that silicon-vacancy centers are concentrated at the crystallites apex while nitrogen-vacancy centers are distributed over the whole crystallite. Dependence of the photoluminescence on excitation radiation intensity demonstrates saturation and allows estimation of the color centers density. The combination of structural parameters, geometry and photoluminescent characteristics are prospective for advantageous applications of these diamond crystallites in quantum information processing and optical sensing.

  13. Conductivity and superconductivity in heavily vacant diamond

    Directory of Open Access Journals (Sweden)

    S A Jafari

    2009-08-01

    Full Text Available   Motivated by the idea of impurity band superconductivity in heavily Boron doped diamond, we investigate the doping of various elements into diamond to address the question, which impurity band can offer a better DOS at the Fermi level. Surprisingly, we find that the vacancy does the best job in producing the largest DOS at the Fermi surface. To investigate the effect of disorder in Anderson localization of the resulting impurity band, we use a simple tight-binding model. Our preliminary study based on the kernel polynomial method shows that the impurity band is already localized at the concentration of 10-3. Around the vacancy concentration of 0.006 the whole spectrum of diamond becomes localized and quantum percolation takes place. Therefore to achieve conducting bands at concentrations on the scale of 5-10 percent, one needs to introduce correlations such as hopping among the vacancies .

  14. Note: Evaluation of microfracture strength of diamond materials using nano-polycrystalline diamond spherical indenter

    Science.gov (United States)

    Sumiya, H.; Hamaki, K.; Harano, K.

    2018-05-01

    Ultra-hard and high-strength spherical indenters with high precision and sphericity were successfully prepared from nanopolycrystalline diamond (NPD) synthesized by direct conversion sintering from graphite under high pressure and high temperature. It was shown that highly accurate and stable microfracture strength tests can be performed on various super-hard diamond materials by using the NPD spherical indenters. It was also verified that this technique enables quantitative evaluation of the strength characteristics of single crystal diamonds and NPDs which have been quite difficult to evaluate.

  15. Tracing the depositional history of Kalimantan diamonds by zircon provenance and diamond morphology studies

    Science.gov (United States)

    Kueter, Nico; Soesilo, Joko; Fedortchouk, Yana; Nestola, Fabrizio; Belluco, Lorenzo; Troch, Juliana; Wälle, Markus; Guillong, Marcel; Von Quadt, Albrecht; Driesner, Thomas

    2016-11-01

    Diamonds in alluvial deposits in Southeast Asia are not accompanied by indicator minerals suggesting primary kimberlite or lamproite sources. The Meratus Mountains in Southeast Borneo (Province Kalimantan Selatan, Indonesia) provide the largest known deposit of these so-called "headless" diamond deposits. Proposals for the origin of Kalimantan diamonds include the adjacent Meratus ophiolite complex, ultra-high pressure (UHP) metamorphic terranes, obducted subcontinental lithospheric mantle and undiscovered kimberlite-type sources. Here we report results from detailed sediment provenance analysis of diamond-bearing Quaternary river channel material and from representative outcrops of the oldest known formations within the Alino Group, including the diamond-bearing Campanian-Maastrichtian Manunggul Formation. Optical examination of surfaces of diamonds collected from artisanal miners in the Meratus area (247 stones) and in West Borneo (Sanggau Area, Province Kalimantan Barat; 85 stones) points toward a classical kimberlite-type source for the majority of these diamonds. Some of the diamonds host mineral inclusions suitable for deep single-crystal X-ray diffraction investigation. We determined the depth of formation of two olivines, one coesite and one peridotitic garnet inclusion. Pressure of formation estimates for the peridotitic garnet at independently derived temperatures of 930-1250 °C are between 4.8 and 6.0 GPa. Sediment provenance analysis includes petrography coupled to analyses of detrital garnet and glaucophane. The compositions of these key minerals do not indicate kimberlite-derived material. By analyzing almost 1400 zircons for trace element concentrations with laser ablation ICP-MS (LA-ICP-MS) we tested the mineral's potential as an alternative kimberlite indicator. The screening ultimately resulted in a small subset of ten zircons with a kimberlitic affinity. Subsequent U-Pb dating resulting in Cretaceous ages plus a detailed chemical reflection make

  16. SU-F-BRE-02: Characterization of a New Commercial Single Crystal Diamond Detector in Photon, Electron and Proton Beams

    International Nuclear Information System (INIS)

    Akino, Y; Das, I

    2014-01-01

    Purpose: Diamond detectors even with superior characteristics have become obsolete due to poor design, selection of crystal and cost. Recently, microDiamond using synthetic single crystal diamond detector (SCDD) is commercially available which is characterized in various radiation beams in this study. Methods: The characteristics of a commercial SCDD model 60019 (PTW) to a 6- and 15-MV photon beams, 6- and 20-MeV electron beams, and 208 MeV proton beams were investigated and compared to the pre-characterized detectors: TN31010 (0.125 cm 3 ) and TN30006 (pinpoint) ionization chambers (PTW), EDGE detector (Sun Nuclear Corp), and SFD Stereotactic Dosimetry Diode Detector (IBA). The depth-dose and profiles data were collected for various field sizes and depths. The dose linearity and dose rate dependency were also evaluated. To evaluate the effects of the preirradiation, the diamond detector which had not been irradiated on the day was set up in the water tank and the response to 100 MU was measured every 20 s. The temperature dependency was tested for the range of 4–60 °C. Angular dependency was evaluated in water phantom by rotating the SCDD. Results: For all radiation types and field sizes, the depth-dose data of the diamond chamber showed identical curve to those of ionization chambers. The profile of the diamond detector was very similar to those of the Edge and SFD detectors, although the 0.125 cm 3 and pinpoint chambers showed averaging effects in the penumbrae region. The temperature dependency was within 0.7% in the range of 4–41°C. A dose of 900 cGy and 1200 cGy were needed to stabilize the chamber to the level within 0.5% and 0.2%, respectively. Conclusion: The type 60019 SCDD detector showed suitable characteristics for depth-dose and profile measurements for wide range of field sizes. However, at least 1000 cGy of pre-irradiation is needed for accurate measurements

  17. Raman Microscopic Analysis of Internal Stress in Boron-Doped Diamond

    Directory of Open Access Journals (Sweden)

    Kevin E. Bennet

    2015-05-01

    Full Text Available Analysis of the induced stress on undoped and boron-doped diamond (BDD thin films by confocal Raman microscopy is performed in this study to investigate its correlation with sample chemical composition and the substrate used during fabrication. Knowledge of this nature is very important to the issue of long-term stability of BDD coated neurosurgical electrodes that will be used in fast-scan cyclic voltammetry, as potential occurrence of film delaminations and dislocations during their surgical implantation can have unwanted consequences for the reliability of BDD-based biosensing electrodes. To achieve a more uniform deposition of the films on cylindrically-shaped tungsten rods, substrate rotation was employed in a custom-built chemical vapor deposition reactor. In addition to visibly preferential boron incorporation into the diamond lattice and columnar growth, the results also reveal a direct correlation between regions of pure diamond and enhanced stress. Definite stress release throughout entire film thicknesses was found in the current Raman mapping images for higher amounts of boron addition. There is also a possible contribution to the high values of compressive stress from sp2 type carbon impurities, besides that of the expected lattice mismatch between film and substrate.

  18. Ultrananocrystalline diamond film as an optimal cell interface for biomedical applications.

    Science.gov (United States)

    Bajaj, Piyush; Akin, Demir; Gupta, Amit; Sherman, Debby; Shi, Bing; Auciello, Orlando; Bashir, Rashid

    2007-12-01

    Surfaces of materials that promote cell adhesion, proliferation, and growth are critical for new generation of implantable biomedical devices. These films should be able to coat complex geometrical shapes very conformally, with smooth surfaces to produce hermetic bioinert protective coatings, or to provide surfaces for cell grafting through appropriate functionalization. Upon performing a survey of desirable properties such as chemical inertness, low friction coefficient, high wear resistance, and a high Young's modulus, diamond films emerge as very attractive candidates for coatings for biomedical devices. A promising novel material is ultrananocrystalline diamond (UNCD) in thin film form, since UNCD possesses the desirable properties of diamond and can be deposited as a very smooth, conformal coating using chemical vapor deposition. In this paper, we compared cell adhesion, proliferation, and growth on UNCD films, silicon, and platinum films substrates using different cell lines. Our results showed that UNCD films exhibited superior characteristics including cell number, total cell area, and cell spreading. The results could be attributed to the nanostructured nature or a combination of nanostructure/surface chemistry of UNCD, which provides a high surface energy, hence promoting adhesion between the receptors on the cell surface and the UNCD films.

  19. A CVD diamond detector for (n,α) cross-section measurements

    International Nuclear Information System (INIS)

    Weiss, C.

    2014-01-01

    A novel detector based on the chemical vapor deposition (CVD) diamond technology has been developed in the framework of this PhD, for the experimental determination of (n,α) cross-sections at the neutron time-of-flight facility n⎽TOF at CERN. The 59 Ni(n,α) 56 Fe cross-section, which is relevant for astrophysical questions as well as for risk-assessment studies in nuclear technology, has been measured in order to validate the applicability of the detector for such experiments. The thesis is divided in four parts. In the introductory part the motivation for measuring (n,α) cross-sections, the experimental challenges for such measurements and the reasons for choosing the CVD diamond technology for the detector are given. This is followed by the presentation of the n⎽TOF facility, an introduction to neutron-induced nuclear reactions and a brief summary of the interaction of particles with matter. The CVD diamond technology and the relevant matters related to electronics are given as well in this first part of the thesis. The second part is dedicated to the design and production of the Diamond Mosaic-Detector (DM-D) and its characterization. The 59 Ni(n,α) 56 Fe cross-section measurement at n⎽TOF and the data analysis are discussed in detail in the third part of the thesis, before the summary of the thesis and an outlook to possible future developments and applications conclude the thesis in the forth part. In this work, the Diamond Mosaic-Detector, which consist of eight single-crystal (sCVD) diamond sensors and one 'Diamond on Iridium' (DOI) sensor has proven to be well suited for (n,α) cross-section measurements for 1 MeV < E α < 22 MeV. The upper limit is given by the thickness of the sensors, d = 150 μm, while the lower limit is dictated by background induced by neutron capture reactions in in-beam materials. The cross-section measurement was focussed on the resonance integral of 59 Ni(n,α) 56 Fe at E n = 203 eV, with the aim of clarifying

  20. Electron field emission for ultrananocrystalline diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Krauss, A. R.; Auciello, O.; Ding, M. Q.; Gruen, D. M.; Huang, Y.; Zhirnov, V. V.; Givargizov, E. I.; Breskin, A.; Chechen, R.; Shefer, E. (and others)

    2001-03-01

    Ultrananocrystalline diamond (UNCD) films 0.1--2.4 {mu}m thick were conformally deposited on sharp single Si microtip emitters, using microwave CH{sub 4}--Ar plasma-enhanced chemical vapor deposition in combination with a dielectrophoretic seeding process. Field-emission studies exhibited stable, extremely high (60--100 {mu}A/tip) emission current, with little variation in threshold fields as a function of film thickness or Si tip radius. The electron emission properties of high aspect ratio Si microtips, coated with diamond using the hot filament chemical vapor deposition (HFCVD) process were found to be very different from those of the UNCD-coated tips. For the HFCVD process, there is a strong dependence of the emission threshold on both the diamond coating thickness and Si tip radius. Quantum photoyield measurements of the UNCD films revealed that these films have an enhanced density of states within the bulk diamond band gap that is correlated with a reduction in the threshold field for electron emission. In addition, scanning tunneling microscopy studies indicate that the emission sites from UNCD films are related to minima or inflection points in the surface topography, and not to surface asperities. These data, in conjunction with tight binding pseudopotential calculations, indicate that grain boundaries play a critical role in the electron emission properties of UNCD films, such that these boundaries: (a) provide a conducting path from the substrate to the diamond--vacuum interface, (b) produce a geometric enhancement in the local electric field via internal structures, rather than surface topography, and (c) produce an enhancement in the local density of states within the bulk diamond band gap.

  1. Progress of Diamond-like Carbon Films

    Directory of Open Access Journals (Sweden)

    CHEN Qing-yun

    2017-03-01

    Full Text Available Diamond-like carbon(DLC films had many unique and outstanding properties such as high thermal conductivity, high hardness, excellent chemical inertness, low friction coefficients and wear coefficients. The properties and combinations were very promising for heat sink, micro-electromechanical devices, radiation hardening, biomedical devices, automotive industry and other technical applications, more research and a lot of attention were attracted in recent years. The research progress of diamond-like films and the nucleation mechanism of film were summarized, and application prospect of DLC films were demonstrated. The aim of this paper is to provide insights on the research trend of DLC films and the industry applications.

  2. Diamond drilling for nuclear waste QC

    International Nuclear Information System (INIS)

    Jennings, Martin.

    1990-01-01

    Specialised diamond core drilling equipment could soon have a role to play in the safe disposal of intermediate level radioactive waste (ILW). Equipment to core and extract samples for quality checking from cement-filled steel waste drums by techniques compatible with eventual remote-handling operations in a 'hot-cell' is being developed. All coring tests carried out to date have been on simulant waste: 200 litre drums containing mixtures of Ordinary Portland Cement, Ground Granulated Blast Furnace Slag and Pulverised Fuel Ash. No radioactive materials have yet been used for the coring trials. The coring equipment and the diamond coring bits are described. (author)

  3. D.C. Arcjet Diamond Deposition

    Science.gov (United States)

    Russell, Derrek Andrew

    1995-01-01

    Polycrystalline diamond films synthesized by a D.C. (direct current) arcjet device was reported for the first time in 1988. This device is capable of higher diamond growth rates than any other form of diamond CVD (chemical vapor deposition) process due to its inherent versatility with regard to the enthalpy and fluid properties of the diamond-depositing vapor. Unfortunately, the versatility of this type of device is contrasted by many difficulties such as arc stability and large heat fluxes which make applying it toward diamond deposition a difficult problem. The purpose of this work was to convert the dc arcjet, which is primarily a metallurgical device, into a commercially viable diamond CVD process. The project was divided into two parts: process development and diagnostics. The process development effort concentrated on the certain engineering challenges. Among these was a novel arcjet design that allowed the carbon-source gas to be injected downstream of the tungsten cathode while still facilitating mixture with the main gas feed. Another engineering accomplishment was the incorporation of a water -cooled substrate cooler/spinner that maintained the substrate at the proper temperature, provided the substrate with a large thermal time constant to reduce thermal shock of the diamond film, and enabled the system to achieve a four -inch diameter growth area. The process diagnostics effort concentrated on measurements aimed at developing a fundamental understanding of the properties of the plasma jet such as temperature, plasma density, Mach number, pressure at the substrate, etc. The plasma temperature was determined to be 5195 K by measuring the rotational temperature of C _2 via optical emission spectroscopy. The Mach number of the plasma jet was determined to be ~6.0 as determined by the ratio of the stagnation pressures before and after the shock wave in the plasma jet. The C_2 concentration in the plasma jet was determined to be {~10 }^{12} cm^ {-3} by

  4. Neutron spectroscopy by means of artificial diamond detectors using a remote read out scheme

    International Nuclear Information System (INIS)

    Angelone, M.; Lattanzi, D.; Pillon, M.; Almaviva, S.; Marinelli, M.; Milani, E.; Prestopino, G.; Verona, C.; Verona Rinati, G.; Aielli, G.; Sintonico, R.; Cardarelli, R.

    2009-01-01

    Artificial crystal diamond neutron detectors have been tested since 2003 and they have demonstrated to be reliable and stable as well as to withstand the harsh working condition available in a large tokamak. Up to now they were used to measure the total and time dependent neutron emission while neutron spectroscopy was never attempted. On the other hand neutron spectrometry con yields important information on the burning plasma and it is requested for future experiments that will use DT plasmas so producing 14 MeV neutrons. Neutron spectrometry can only be attempted by using single crystal diamond (SCD) which, as it has been demonstrated, can show an energy resolution (FWHM) as low as 0.5%. However, in ITER, the huge neutron and gamma fluxes as well as the high temperature will not allow the electronics to be located close to the detector measuring point and near the plasma. For this reason it is necessary to develop a new approach in which new detectors able to withstand harsh environments and the electronics are far apart. This is a very challenging task if it is devoted to perform signal Pulse Height Analyses (PHS) with high energy resolution. To exploit this concept a SCD detector covered with a thin layer of 6 LiF was installed at JET during the 2008 experimental campaigns and equipped with a remote read-out scheme located about 100 m away from the detector. The detector's signal was transported up to a conceptually new fast charge amplifier (FCA) developed to fulfill the task by means of a high frequency, single, low attenuation, super-screened cable. This FCA is able to read, stretch (up to 100 ns) and amplify the small (some μV) and ultra fast (< 100 ps wide) signal produced by the radiation in the diamond detector. The signal amplified by the FCA was then processed through a commercial fast digitizer (NI-5114) 250 Ms/sec, 200 MHz equipped with 64 MB ram memory. Both signal amplitude and area can be used to get a PHS spectrum demonstrating the unique

  5. 14 MeV proton activation analysis

    International Nuclear Information System (INIS)

    Constantinescu, B.; Ivanov, E.; Plostinaru, D.; Popa-Nemoiu, A.; Pascovichi, G.

    1985-01-01

    A fast nuclear nondestructive method for protein analysis using the 14 MeV proton activation has been developed. The total nitrogen content was measured through the reaction: 14 N (p,n) 14 O, (Tsub(1/2)=71 s). The 14 O activity was detected by means of its characteristic 2.312 MeV gamma-ray line with a NaI(Tl) detector. For a fast determination of a large number of samples a mechanized sistem reacting a rate of one sample per minute has been developed. The laboratory electronics comprises a multichannel analyser, a PDP computer and an electronic module comtroller. Comparison of the results obtained by the method described and the classical Kjeldal technique for samples of various cereal grains (soya bean seads, wheat, barley and corn) showed good correlation. A problem of the analysis of the whole protein region on corn and soya-bean seads, where this region is thicker (0,2 - 2 mm), is mentioned. In this case flour was proposed to be used to obtain a protein homogeneous sample and the irradiaton dose for a sample was about 33,000 Gy, mainly (99%) from protons (27 s x 100 nA x 14 MeV)

  6. Dental Implant Surgery

    Science.gov (United States)

    ... here to find out more. Dental Implant Surgery Dental Implant Surgery Dental implant surgery is, of course, ... to find out more. Wisdom Teeth Management Wisdom Teeth Management An impacted wisdom tooth can damage neighboring ...

  7. Cochlear Implant

    Directory of Open Access Journals (Sweden)

    Mehrnaz Karimi

    1992-04-01

    Full Text Available People with profound hearing loss are not able to use some kinds of conventional amplifiers due to the nature of their loss . In these people, hearing sense is stimulated only when the auditory nerve is activated via electrical stimulation. This stimulation is possible through cochlear implant. In fact, for the deaf people who have good mental health and can not use surgical and medical treatment and also can not benefit from air and bone conduction hearing aids, this device is used if they have normal central auditory system. The basic parts of the device included: Microphone, speech processor, transmitter, stimulator and receiver, and electrode array.

  8. Thermal diffusivity of diamond films using a laser pulse technique

    International Nuclear Information System (INIS)

    Albin, S.; Winfree, W.P.; Crews, B.S.

    1990-01-01

    Polycrystalline diamond films were deposited using a microwave plasma-enhanced chemical vapor deposition process. A laser pulse technique was developed to measure the thermal diffusivity of diamond films deposited on a silicon substrate. The effective thermal diffusivity of a diamond film on silicon was measured by observing the phase and amplitude of the cyclic thermal waves generated by laser pulses. An analytical model is presented to calculate the effective inplane (face-parallel) diffusivity of a two-layer system. The model is used to reduce the effective thermal diffusivity of the diamond/silicon sample to a value for the thermal diffusivity and conductivity of the diamond film

  9. High-pressure-high-temperature treatment of natural diamonds

    CERN Document Server

    Royen, J V

    2002-01-01

    The results are reported of high-pressure-high-temperature (HPHT) treatment experiments on natural diamonds of different origins and with different impurity contents. The diamonds are annealed in a temperature range up to 2000 sup o C at stabilizing pressures up to 7 GPa. The evolution is studied of different defects in the diamond crystal lattice. The influence of substitutional nitrogen atoms, plastic deformation and the combination of these is discussed. Diamonds are characterized at room and liquid nitrogen temperature using UV-visible spectrophotometry, Fourier transform infrared spectrophotometry and photoluminescence spectrometry. The economic implications of diamond HPHT treatments are discussed.

  10. Application of CVD diamond film for radiation detection

    International Nuclear Information System (INIS)

    Zhou Haiyang; Zhu Xiaodong; Zhan Rujuan

    2005-01-01

    With the development of diamond synthesis at low pressure, the CVD diamond properties including electronic characteristics have improved continuously. Now the fabrication of electronic devices based on the CVD diamond has been one of hot research subjects in this field. Due to many unique advantages, such as high signal-noise ratio, fast time response, and normal output in extremely harsh surrounding, the CVD diamond radiation detector has attracted more and more interest. In this paper, we have reviewed the development and status of the CVD diamond radiation detector. The prospect of this detector is described. (authors)

  11. Rutherford backscatter measurements on tellurium and cadmium implanted gallium arsenide

    International Nuclear Information System (INIS)

    Bell, E.C.

    1979-10-01

    The primary aim of the work described in this thesis was to examine implanted layers of the dopant impurities cadmium and tellurium in gallium arsenide and to experimentally assess their potential for producing electrically active layers. 1.5 MeV Rutherford backscattering measurements of lattice disorder and atom site location have been used to assess post implantation thermal annealing and elevated temperature implantations to site the dopant impurities on either gallium or arsenic lattice positions in an otherwise undisordered lattice. Pyrolitically deposited silicon dioxide was used as an encapsulant to prevent thermal dissociation of the gallium arsenide during annealing. It has been shown that high doses of cadmium and tellurium can be implanted without forming amorphous lattice disorder by heating the gallium arsenide during implantation to relatively low temperatures. Atom site location measurements have shown that a large fraction of a tellurium dose implanted at 180 0 C is located on or near lattice sites. Channeled backscatter measurements have shown that there is residual disorder or lattice strain in gallium arsenide implanted at elevated temperatures. The extent of this disorder has been shown to depend on the implanted dose and implantation temperature. The channeling effect has been used to measure annealing of the disorder. (author)

  12. PREFACE: Science's gem: diamond science 2009 Science's gem: diamond science 2009

    Science.gov (United States)

    Mainwood, Alison; Newton, Mark E.; Stoneham, Marshall

    2009-09-01

    Natural diamond has been valued for its appearance and mechanical properties for at least two thousand years. As a gem stone diamond is unsurpassed. However, scientific work, especially in the last 20 years, has demonstrated that diamond has numerous surprising properties and many unique ones. Some of the extreme properties have been known for many years, but the true scale of diamond's other highly desirable features is still only coming to light as control in the synthesis of diamond, and hence material perfection, improves. The ultimate prize for man-made diamond is surely not in the synthesis of gem stones, but in delivering technological solutions enabled by diamond to the challenges facing our society today. If the special properties are to be exploited to their full potential, at least four crucial factors must be considered. First, there must be sufficient scientific understanding of diamond to make applications effective, efficient and economical. Secondly, the means of fabrication and control of properties have to be achieved so that diamond's role can be optimised. Thirdly, it is not enough that its properties are superior to existing materials: they must be so much better that it is worth initiating new technologies to exploit them. Finally, any substantial applications will have to address the society's major needs worldwide. The clear technology drivers for the 21st century come from the biomedical technologies, the demand for energy subject to global constraints, and the information technologies, where perhaps diamond will provide the major enabling technology [1]. The papers in this volume concern the solid state physics of diamond, and primarily concern the first two factors: understanding, and control of properties. They address many of the outstanding basic problems, such as the identification of existing defects, which affect the material's properties, both desirable and less so. Regarding future substantial applications, one paper discusses

  13. Study on the Effect of Diamond Grain Size on Wear of Polycrystalline Diamond Compact Cutter

    Science.gov (United States)

    Abdul-Rani, A. M.; Che Sidid, Adib Akmal Bin; Adzis, Azri Hamim Ab

    2018-03-01

    Drilling operation is one of the most crucial step in oil and gas industry as it proves the availability of oil and gas under the ground. Polycrystalline Diamond Compact (PDC) bit is a type of bit which is gaining popularity due to its high Rate of Penetration (ROP). However, PDC bit can easily wear off especially when drilling hard rock. The purpose of this study is to identify the relationship between the grain sizes of the diamond and wear rate of the PDC cutter using simulation-based study with FEA software (ABAQUS). The wear rates of a PDC cutter with a different diamond grain sizes were calculated from simulated cuttings of cutters against granite. The result of this study shows that the smaller the diamond grain size, the higher the wear resistivity of PDC cutter.

  14. A nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by a lift-off process

    Energy Technology Data Exchange (ETDEWEB)

    Mokuno, Yoshiaki, E-mail: mokuno-y@aist.go.jp; Kato, Yukako; Tsubouchi, Nobuteru; Chayahara, Akiyoshi; Yamada, Hideaki; Shikata, Shinichi [Research Institute for Ubiquitous Energy Devices, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan)

    2014-06-23

    A nitrogen-doped single crystal diamond plate with a low dislocation density is fabricated by chemical vapor deposition (CVD) from a high pressure high temperature synthetic type IIa seed substrate by ion implantation and lift-off processes. To avoid sub-surface damage, the seed surface was subjected to deep ion beam etching. In addition, we introduced a nitrogen flow during the CVD step to grow low-strain diamond at a relatively high growth rate. This resulted in a plate with low birefringence and a dislocation density as low as 400 cm{sup −2}, which is the lowest reported value for a lift-off plate. Reproducing this lift-off process may allow mass-production of single crystal CVD diamond plates with low dislocation density and consistent quality.

  15. X-ray topographic study of diamonds: implications for the genetic nature of inclusions in diamond

    Science.gov (United States)

    Agrosì, Giovanna; Nestola, Fabrizio; Tempesta, Gioacchino; Bruno, Marco; Scandale, Eugenio; Harris, Jeff W.

    2014-05-01

    In recent years, several studies have focused on the growth conditions of the diamonds through the analysis of the mineral inclusions trapped in them (Howell, 2012 and references therein). Nevertheless, to obtain rigorous information about chemical and physical conditions of diamond formation, it is crucial to determine if the crystallization of the inclusions occurred before (protogenetic nature), during (syngenetic nature) or after (epigenetic nature) the growth of diamond (Wiggers de Vries et al., 2011). X-ray topography (XRDT) can be a helpful tool to verify the genetic nature of inclusions in diamond. This technique characterizes the extended defects and reconstructs the growth history of the samples (Agrosì et al., 2013 and references therein) and, consequently contributes to elucidation of the relationship between the inclusions and the host-diamond. With this aim a diamond from the Udachnaya kimberlite, Siberia, was investigated. The diamond crystal was the one previously studied by Nestola et al. (2011) who performed in-situ crystal structure refinement of the inclusions to obtain data about the formation pressure. The inclusions were iso-oriented olivines that did not show evident cracks and subsequently could not be considered epigenetic. Optical observations revealed an anomalous birefringence in the adjacent diamond and the inclusions had typical "diamond-imposed cubo-octahedral" shape for the largest olivine. The diffraction contrast study shows that the diamond exhibits significant deformation fields related to plastic post growth deformation. The crystallographic direction of strains was established applying the extinction criterion. Section topographs were taken to minimize the overlapping of the strain field associate with the different defects and revealed that no dislocations nucleated from the olivine inclusions. Generally, when a solid inclusion has been incorporated in the growing crystal, the associated volume distortion can be minimized by

  16. One step deposition of highly adhesive diamond films on cemented carbide substrates via diamond/β-SiC composite interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Tao; Zhuang, Hao; Jiang, Xin, E-mail: xin.jiang@uni-siegen.de

    2015-12-30

    Graphical abstract: - Highlights: • Novel diamond/beta-silicon carbide composite gradient interlayers were synthesized. • The interlayer features a cross-sectional gradient with increasing diamond content. • Diamond top layers and the interlayers were deposited in one single process. • The adhesion of the diamond film is drastically improved by employing the interlayer. • The stress was suppressed by manipulating the distribution of diamond and silicon carbide. - Abstract: Deposition of adherent diamond films on cobalt-cemented tungsten carbide substrates has been realized by application of diamond/beta-silicon carbide composite interlayers. Diamond top layers and the interlayers were deposited in one single process by hot filament chemical vapor deposition technique. Two different kinds of interlayers have been employed, namely, gradient interlayer and interlayer with constant composition. The distribution of diamond and beta-silicon carbide phases was precisely controlled by manipulating the gas phase composition. X-ray diffraction and Raman spectroscopy were employed to determine the existence of diamond, beta-silicon carbide and cobalt silicides (Co{sub 2}Si, CoSi) phases, as well as the quality of diamond crystal and the residual stress in the films. Rockwell-C indentation tests were carried out to evaluate the film adhesion. It is revealed that the adhesion of the diamond film is drastically improved by employing the interlayer. This is mainly influenced by the residual stress in the diamond top layer, which is induced by the different thermal expansion coefficient of the film and the substrate. It is even possible to further suppress the stress by manipulating the distribution of diamond and beta-silicon carbide in the interlayer. The most adhesive diamond film on cemented carbide is thus obtained by employing a gradient composite interlayer.

  17. Diamond MEMS: wafer scale processing, devices, and technology insertion

    Science.gov (United States)

    Carlisle, J. A.

    2009-05-01

    Diamond has long held the promise of revolutionary new devices: impervious chemical barriers, smooth and reliable microscopic machines, and tough mechanical tools. Yet it's been an outsider. Laboratories have been effectively growing diamond crystals for at least 25 years, but the jump to market viability has always been blocked by the expense of diamond production and inability to integrate with other materials. Advances in chemical vapor deposition (CVD) processes have given rise to a hierarchy of carbon films ranging from diamond-like carbon (DLC) to vapor-deposited diamond coatings, however. All have pros and cons based on structure and cost, but they all share some of diamond's heralded attributes. The best performer, in theory, is the purest form of diamond film possible, one absent of graphitic phases. Such a material would capture the extreme hardness, high Young's modulus and chemical inertness of natural diamond. Advanced Diamond Technologies Inc., Romeoville, Ill., is the first company to develop a distinct chemical process to create a marketable phase-pure diamond film. The material, called UNCD® (for ultrananocrystalline diamond), features grain sizes from 3 to 300 nm in size, and layers just 1 to 2 microns thick. With significant advantages over other thin films, UNCD is designed to be inexpensive enough for use in atomic force microscopy (AFM) probes, microelectromechanical machines (MEMS), cell phone circuitry, radio frequency devices, and even biosensors.

  18. Plasma boriding of a cobalt–chromium alloy as an interlayer for nanostructured diamond growth

    Energy Technology Data Exchange (ETDEWEB)

    Johnston, Jamin M.; Jubinsky, Matthew; Catledge, Shane A., E-mail: catledge@uab.edu

    2015-02-15

    Highlights: • Metal-boride layer creates a compatible surface for NSD deposition. • PECVD boriding on CoCrMo produces robust metal-boride layer. • Deposition temperature comparison shows 750 °C boriding masks surface cobalt. • EDS shows boron diffusion as well as deposition. • Nanoindentation hardness of CoCrMo substantially increases after boriding. - Abstract: Chemical vapor deposited (CVD) diamond coatings can potentially improve the wear resistance of cobalt–chromium medical implant surfaces, but the high cobalt content in these alloys acts as a catalyst to form graphitic carbon. Boriding by high temperature liquid baths and powder packing has been shown to improve CVD diamond compatibility with cobalt alloys. We use the microwave plasma-enhanced (PE) CVD process to deposit interlayers composed primarily of the borides of cobalt and chromium. The use of diborane (B{sub 2}H{sub 6}) in the plasma feedgas allows for the formation of a robust boride interlayer for suppressing graphitic carbon during subsequent CVD of nano-structured diamond (NSD). This metal–boride interlayer is shown to be an effective diffusion barrier against elemental cobalt for improving nucleation and adhesion of NSD coatings on a CoCrMo alloy. Migration of elemental cobalt to the surface of the interlayer is significantly reduced and undetectable on the surface of the subsequently-grown NSD coating. The effects of PECVD boriding are compared for a range of substrate temperatures and deposition times and are evaluated using glancing-angle X-ray diffraction (XRD), cross-sectional scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and micro-Raman spectroscopy. Boriding of CoCrMo results in adhered nanostructured diamond coatings with low surface roughness.

  19. Mechanical pretreatment for improved adhesion of diamond coatings

    International Nuclear Information System (INIS)

    Toenshoff, H.K.; Mohlfeld, A.; Gey, C.; Winkler, J.

    1999-01-01

    Diamond coatings are mainly used in cutting processes due to their tribological characteristics. They show a high hardness, low friction coefficient, high wear resistance and good chemical inertness. In relation to polycrystalline diamond (PCD)-tipped cutting inserts, especially the advantageous chemical stability of diamond coatings is superior as no binder phases between diamond grains are used. However, the deposition of adherent high-quality diamond coatings has been found difficult. Thus, substrate pretreatment is utilised to improve film adhesion. This investigation is based on water peening of the substrate material before coating. The investigation revealed best results for diamond film adhesion on pretreated substrates compared to conventional diamond coatings on cemented carbide tools applied with the CVD hot-filament process. In final cutting tests with increased film adhesion trough water peened cutting tools an improved wear behavior was detected. (orig.)

  20. Polarized Raman spectroscopy of chemically vapour deposited diamond films

    International Nuclear Information System (INIS)

    Prawer, S.; Nugent, K.W.; Weiser, P.S.

    1994-01-01

    Polarized micro-Raman spectra of chemically vapour deposited diamond films are presented. It is shown that important parameters often extracted from the Raman spectra such as the ratio of the diamond to non-diamond component of the films and the estimation of the level of residual stress depend on the orientation of the diamond crystallites with respect to the polarization of the incident laser beam. The dependence originates from the fact that the Raman scattering from the non-diamond components in the films is almost completely depolarized whilst the scattering from the diamond components is strongly polarized. The results demonstrate the importance of taking polarization into account when attempting to use Raman spectroscopy in even a semi-quantitative fashion for the assessment of the purity, perfection and stress in CVD diamond films. 8 refs., 1 tab. 2 figs